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Sample records for ac bias voltage

  1. Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    NASA Technical Reports Server (NTRS)

    Bandler, Simon

    2011-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

  2. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; Kelley, R.; Kilbourne, C.; Porter, F.; Sadlier, J.; Smith, S.

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  3. Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

    NASA Astrophysics Data System (ADS)

    Volkov, N. V.; Tarasov, A. S.; Smolyakov, D. A.; Varnakov, S. N.; Ovchinnikov, S. G.

    2015-06-01

    We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz. Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface.

  4. Electrical Effect in Silver-Point Realization Due to Cell Structure and Bias Voltage Based on Resistance Measurement Using AC and DC Bridges

    NASA Astrophysics Data System (ADS)

    Widiatmo, J. V.; Harada, K.; Yamazawa, K.; Tamba, J.; Arai, M.

    2015-08-01

    Electrical effects related to insulating leakage represent one of the major factors contributing to uncertainties in measurements using high-temperature standard platinum resistance thermometers (HTSPRTs), especially during the realization of the silver freezing point (). This work is focused on the evaluation of the differences in resistance measurements observed when using AC resistance bridges and DC resistance bridges, hereafter, termed the AC-DC differences, as the result of various electrical effects. The magnitude of the AC-DC difference in several silver-point cells is demonstrated with several HTSPRTs. The effect of the cell structure on the AC-DC difference is evaluated by exchanging some components, part by part, within a silver-point cell. Then, the effect of the bias voltage applied to the heat pipe within the silver-point furnace is evaluated. Through the analysis of the experimental results and comparison with the reports in the literature, the importance of evaluating the AC-DC difference as a means to characterize the underlying electrical effects is discussed, considering that applying a negative bias condition to the furnace with respect to the high-temperature SPRT can minimize the AC-DC difference. Concluding recommendations are proposed on the components used in silver-point cells and the application of a bias voltage to the measurement circuit to minimize the effects of the electrical leakage.

  5. Voltage controller/current limiter for ac

    NASA Technical Reports Server (NTRS)

    Wu, T. T.

    1980-01-01

    Circuit protects ac power systems for overload failures, limits power surge and short-circuit currents to 150 percent of steady state level, regulates ac output voltage, and soft starts loads. Limiter generates dc error signal in response to line fluctuations and dumps power when overload is reached. Device is inserted between ac source and load.

  6. Numerical study of dc-biased ac-electrokinetic flow over symmetrical electrodes

    PubMed Central

    Yang Ng, Wee; Ramos, Antonio; Cheong Lam, Yee; Rodriguez, Isabel

    2012-01-01

    This paper presents a numerical study of DC-biased AC-electrokinetic (DC-biased ACEK) flow over a pair of symmetrical electrodes. The flow mechanism is based on a transverse conductivity gradient created through incipient Faradaic reactions occurring at the electrodes when a DC-bias is applied. The DC biased AC electric field acting on this gradient generates a fluid flow in the form of vortexes. To understand more in depth the DC-biased ACEK flow mechanism, a phenomenological model is developed to study the effects of voltage, conductivity ratio, channel width, depth, and aspect ratio on the induced flow characteristics. It was found that flow velocity on the order of mm/s can be produced at higher voltage and conductivity ratio. Such rapid flow velocity is one of the highest reported in microsystems technology using electrokinetics. PMID:22662084

  7. Interface Circuit for Vibration Energy Harvesting with Adjustable Bias Voltage

    NASA Astrophysics Data System (ADS)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2015-12-01

    This paper presents a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage. An electronic switch is used to modify the circuit configuration so that the harvested energy increases the voltage across a biasing capacitor. Decrease of this biasing capacitor voltage occurs naturally due to the circuit imperfections. Such a control of the bias voltage enables to adjust the amount of energy converted by the variable capacitor on each cycle. This feature can be used to optimize the mechanical damping induced by the energy conversion process in order to maximize the harvested power. Another feature of this interface circuit is that it is capable to get high bias voltage whatever the battery voltage with low energy loss.

  8. Dc to ac converter operates efficiently at low input voltages

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Self-oscillating dc to ac converter with transistor switching to produce a square wave output is used for low and high voltage power sources. The converter has a high efficiency throughout a wide range of loads.

  9. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  10. Moderately nonlinear diffuse-charge dynamics under an ac voltage

    NASA Astrophysics Data System (ADS)

    Stout, Robert F.; Khair, Aditya S.

    2015-09-01

    The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of Vo/(kBT /e ) , where Vo is the amplitude of the driving voltage and kBT /e is the thermal voltage with kB as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D /λDL , where D is the ion diffusivity, λD is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O (Vo3) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in Vo. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing Vo. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

  11. Non-equilibrium spin-transfer torque in voltage-biased SFS and SFNFS Josephson junctions

    NASA Astrophysics Data System (ADS)

    Zhao, Erhai

    2005-03-01

    We report theoretical results for the non-equilibrium spin current and spin-transfer torque in voltage biased SFS and SFNFS Josephson structures. We discuss the role and interplay of spin filtering, spin rotation and Andreev scattering. These processes lead to identifiable structures in the d.c. and a.c. components of the spin current and the spin-transfer torque. Our calculations are based on a recent formulation of the boundary conditions for non-equilibrium quasiclassical Riccati equations.^ ^ E. Zhao, T. Löfwander, and J. A. Sauls, Phys. Rev. B 70, 134510 (2004).

  12. Moderately nonlinear diffuse-charge dynamics under an ac voltage.

    PubMed

    Stout, Robert F; Khair, Aditya S

    2015-09-01

    The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer. PMID:26465471

  13. Antenna-coupled arrays of voltage-biased superconducting bolometers

    SciTech Connect

    Myers, Michael J.; Lee, Adrian T.; Richards, P.L.; Schwan, D.; Skidmore, J.T.; Smith, A.D.; Spieler, H.; Yoon, Jongsoo

    2001-07-23

    We report on the development of antenna-coupled Voltage-biased Superconducting Bolometers (VSBs) which use Transition-edge Sensors (TES). Antenna coupling can greatly simplify the fabrication of large multi-frequency bolometer arrays compared to horn-coupled techniques. This simplification can make it practical to implement 1000+ element arrays that fill the focal plane of mm/sub-mm wave telescopes. We have designed a prototype device with a double-slot dipole antenna, integrated band-defining filters, and a membrane-suspended bolometer. A test chip has been constructed and will be tested shortly.

  14. Performance of TES X-ray Microcalorimeters with AC Bias Read-Out at MHz Frequencies

    NASA Astrophysics Data System (ADS)

    Akamatsu, H.; Gottardi, L.; Adams, J.; Bandler, S.; Bruijn, M.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; den Hartog, R.; Hoevers, H.; Kelley, R.; Kilbourne, C.; van der Kuur, J.; van den Linden, A. J.; Porter, F.; Sadleir, J.; Smith, S.; Kiviranta, M.

    2014-08-01

    At SRON we are developing Frequency Domain Multiplexing for the read-out of superconducting transition edge sensor microcalorimeters for future X-ray astrophysical missions. We will report on the performance of Goddard Space Flight Center pixels under AC bias in the MHz frequency range. Superconducting flux transformers are used to improve the impedance matching between the low ohmic TESs and the SQUID. We connected 5 pixels to the LC filters with resonant frequencies ranging between 1 and 5 MHz. For X-ray photons of 6 keV we measured a best X-ray energy resolution of 3.6 eV at 1.4 MHz, consistent with the integrated Noise Equivalent Power. In addition, we improved the electrical circuit by optimizing the coupling ratio of the impedance matching transformer. In addition, we improved electrical circuit for impedance matching; modified transformer coupling ratio. As a result, we got the integrated noise equivalent power resolution of 2.7 eV at 2.5 MHz. A characterization of the detector response as a function of the AC bias voltage, bias frequency and the applied magnetic field is presented.

  15. Flow reversal at low voltage and low frequency in a microfabricated ac electrokinetic pump.

    PubMed

    Gregersen, Misha Marie; Olesen, Laurits Højgaard; Brask, Anders; Hansen, Mikkel Fougt; Bruus, Henrik

    2007-11-01

    Microfluidic chips have been fabricated in Pyrex glass to study electrokinetic pumping generated by a low-voltage ac bias applied to an in-channel asymmetric metallic electrode array. A measurement procedure has been established and followed carefully resulting in a high degree of reproducibility of the measurements over several days. A large coverage fraction of the electrode array in the microfluidic channels has led to an increased sensitivity allowing for pumping measurements at low bias voltages. Depending on the ionic concentration a hitherto unobserved reversal of the pumping direction has been measured in a regime, where both the applied voltage and the frequency are low, V(rms)<1.5 V and f<20 kHz , compared to previously investigated parameter ranges. The impedance spectrum has been thoroughly measured and analyzed in terms of an equivalent circuit diagram to rule out trivial circuit explanations of our findings. Our observations agree qualitatively, but not quantitatively, with theoretical electrokinetic models published in the literature. PMID:18233754

  16. Focal Plane Arrays of Voltage-Biased Superconducting Bolometers

    NASA Technical Reports Server (NTRS)

    Myers, Michael J.; Clarke, John; Gildemeister, J. M.; Lee, Adrian T.; Richards, P. L.; Schwan, Dan; Skidmore, J. T.; Spieler, Helmuth; Yoon, Jongsoo

    2001-01-01

    The 200-micrometer to 3-mm wavelength range has great astronomical and cosmological significance. Science goals include characterization of the cosmic microwave background, measurement of the Sunyaev-Zel'dovich effect in galaxy clusters, and observations of forming galaxies. Cryogenic bolometers are the most sensitive broadband detectors in this frequency range. Because single bolometer pixels are reaching the photon noise limit for many observations, the development of large arrays will be critical for future science progress. Voltage-biased superconducting bolometers (VSBs) have several advantages compared to other cryogenic bolometers. Their strong negative electrothermal feedback enhances their linearity, speed, and stability. The large noise margin of the SQUID readout enables multiplexed readout schemes, which are necessary for developing large arrays. In this paper, we discuss the development of a large absorber-coupled array, a frequency-domain SQUID readout multiplexer, and an antenna-coupled VSB design.

  17. Improved optogalvanic detection with voltage biased Langmuir probes

    NASA Astrophysics Data System (ADS)

    Persson, A.; Berglund, M.; Salehpour, M.

    2014-12-01

    Optogalvanic detectors show great potential for infrared spectroscopy, especially in cavity enhanced techniques where they, in contrast to ordinary absorption detectors, can perform intracavity measurements. This enables them to utilize the signal-to-noise ratio improvement gained from the extended effective path length inside an optical cavity, without losing signal strength due to the limited amount of light exiting through the rear mirror. However, if optogalvanic detectors are to become truly competitive, their intrinsic sensitivity and stability has to be improved. This, in turn, requires a better understanding of the mechanisms behind the generation of the optogalvanic signal. The study presented here focuses on an optogalvanic detector based on a miniaturized stripline split-ring resonator plasma source equipped with Langmuir probes for detecting the optogalvanic signal. In particular, the effect of applying a constant bias voltage to one of the probes is investigated, both with respect to the sensitivity and stability, and to the mechanism behind the generation of the signal. Experiments with different bias voltages at different pressures and gas composition have been conducted. In particular, two different gas compositions (pure CO2 and 0.25% CO2 in 99.75% N2) at six different pressures (100 Pa to 600 Pa) have been studied. It has been shown that probe biasing effectively improves the performance of the detector, by increasing the amplitude of the signal linearly over one order of magnitude, and the stability by about 40% compared with previous studies. Furthermore, it has been shown that relatively straightforward plasma theory can be applied to interpret the mechanism behind the generation of the signal, although additional mechanisms, such as rovibrational excitation from electron-molecule collisions, become apparent in CO2 plasmas with electron energies in the 1-6 eV range. With the achieved performance improvement and the more solid theoretical

  18. Improved optogalvanic detection with voltage biased Langmuir probes

    SciTech Connect

    Persson, A.; Salehpour, M.; Berglund, M.

    2014-12-28

    Optogalvanic detectors show great potential for infrared spectroscopy, especially in cavity enhanced techniques where they, in contrast to ordinary absorption detectors, can perform intracavity measurements. This enables them to utilize the signal-to-noise ratio improvement gained from the extended effective path length inside an optical cavity, without losing signal strength due to the limited amount of light exiting through the rear mirror. However, if optogalvanic detectors are to become truly competitive, their intrinsic sensitivity and stability has to be improved. This, in turn, requires a better understanding of the mechanisms behind the generation of the optogalvanic signal. The study presented here focuses on an optogalvanic detector based on a miniaturized stripline split-ring resonator plasma source equipped with Langmuir probes for detecting the optogalvanic signal. In particular, the effect of applying a constant bias voltage to one of the probes is investigated, both with respect to the sensitivity and stability, and to the mechanism behind the generation of the signal. Experiments with different bias voltages at different pressures and gas composition have been conducted. In particular, two different gas compositions (pure CO{sub 2} and 0.25% CO{sub 2} in 99.75% N{sub 2}) at six different pressures (100 Pa to 600 Pa) have been studied. It has been shown that probe biasing effectively improves the performance of the detector, by increasing the amplitude of the signal linearly over one order of magnitude, and the stability by about 40% compared with previous studies. Furthermore, it has been shown that relatively straightforward plasma theory can be applied to interpret the mechanism behind the generation of the signal, although additional mechanisms, such as rovibrational excitation from electron-molecule collisions, become apparent in CO{sub 2} plasmas with electron energies in the 1–6 eV range. With the achieved performance improvement and

  19. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    SciTech Connect

    Jordan, Paul M. Simon, Daniel K.; Dirnstorfer, Ingo; Mikolajick, Thomas

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  20. Single SQUID multiplexer for arrays of voltage-biased superconducting bolometers

    SciTech Connect

    Yoon, Jongsoo; Clarke, John; Gildemeister, J.M.; Lee, Adrian T.; Myers, M.J.; Richards, P.L.; Skidmore, J.T.; Spieler, H.G.

    2001-08-20

    We describe a frequency domain superconducting quantum interference device (SQUID) multiplexer which monitors a row of low-temperature sensors simultaneously with a single SQUID. Each sensor is ac biased with a unique frequency and all the sensor currents are added in a superconducting summing loop. A single SQUID measures the current in the summing loop, and the individual signals are lock-in detected after the room temperature SQUID electronics. The current in the summing loop is nulled by feedback to eliminate direct crosstalk. In order to avoid the accumulation of Johnson noise in the summing loop, a tuned bandpass filter is inserted in series with each sensor. For a 32-channel multiplexer for Voltage-biased Superconducting Bolometer (VSB) with a time constant {approx}1msec, we estimate that bias frequencies in the range from {approx}500kHz to {approx}600kHz are practical. The major limitation of our multiplexing scheme is in the slew rate of a readout SQUID. We discuss a ''carrier nulling'' technique which could be used to increase the number of sensors in a row or to multiplex faster bolometers by reducing the required slew rate for a readout SQUID.

  1. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    NASA Astrophysics Data System (ADS)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+‑434.81 nm and Ar+‑442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m‑3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  2. Development of an AC Phase Controlled Testing Apparatus with an Impulse Voltage

    NASA Astrophysics Data System (ADS)

    Kando, Masaaki; Matsuo, Takashi

    Overvoltages as lightning surges and/or switching surges will affect power apparatuses and electric appliances, which make them of deterioration. However, recent AC testing apparatuses haven't been functions generating an impulse voltage. Moreover, the apparatuses with controlling an impulse voltage haven't been utilized except the low voltage function generator. Therefore, an AC phase controlled testing apparatus with an impulse voltage (0.8/6μs) has been developed in order to elucidate mechanism of the degradation in insulating materials with a AC power supply simulating the overvoltages.

  3. A Numerical Simulation Of The Pulse Sequence Reconstruction in AC Biased TESs With a {beta} Source

    SciTech Connect

    Ferrari, Lorenza; Vaccarone, Renzo

    2009-12-16

    We study the response of micro-calorimeters based on Ir/Au TESs biased by an AC voltage in the MHz range to the power input generated by beta emission in a Re source thermally connected to the calorimeter itself. The micro-calorimeter is assumed to work at -80 mK, and the energy pulses corresponding to the beta emission have an energy distributed between zero and 2.58 KeV. In this numerical simulation the TES is inserted in a RLC resonating circuit, with a low quality factor. The thermal conductivities between the source and the calorimeter and that from the calorimeter to the heat sink are non-linear. The superconducting to normal transition of the TES is described by a realistic non-linear model. The AC current at the carrier frequency, modulated by the changing resistance of the TES, is demodulated and the output is filtered. The resulting signal is analyzed to deduce the attainable time resolution and the linearity of the response.

  4. QPSK modulation for AC-power-signal-biased visible light communication system

    NASA Astrophysics Data System (ADS)

    Liu, Yu-Feng; Yeh, Chien-Hung; Chow, Chi-Wai; Liu, Yang

    2013-01-01

    With the integration of light emitting diode (LED), visible light communication (VLC) can provide wireless communication link using the lightning system. Due to the consideration of power efficiency, AC-LED has the design of reducing energy waste with alternating current from the power outlet. In this work, we propose an AC-power-signalbiased system that provides communication on both DC-LED and AC-LED. The bias circuit is designed to combine ACpower signal and the message signal with QPSK format. This driving scheme needs no AC-to-DC converters and it is suitable for driving AC LED. Synchronization is completed to avoid threshold effect of LED.

  5. Thermally biased AC electrokinetic pumping effect for lab-on-a-chip based delivery of biofluids.

    PubMed

    Yuan, Quan; Wu, Jie

    2013-02-01

    One major motivation for microfluidic research is to develop point of care diagnostic tools, which often demands a solution for chip-scale pumping that is of low cost, small size and light weight. Electrokinetics has been extensively studied for disposable pumping since only electrodes are needed to induce microflows. However, it encounters difficulties with conductive biofluids because of the associated high salt content. In electrokinetic pumps, electrodes are in direct contact with fluid, so high salt content will compress the electric double layer that is essential to electroosmostic flows. Alternating current electrothermal (ACET) effect is the only electrokinetic method found viable for biofluid actuation. While high frequency (>10 kHz) operation can suppress electrochemical reactions, electrical potential that could be applied over biofluids is still limited within several volts due to risk of electrolysis or impedance mismatch. Since ACET flow velocity has a quartic dependence on the voltage, ACET flows would be rather slow if electric field alone is used for actuation. This work studies the effect of a thermal bias on enhancing AC electrokinetic pumping. With proper imposition of external thermal gradients, significant improvement in flow velocity has been demonstrated by numerical simulation and preliminary experiments. Both showed that with 4 V(rms) at 100 kHz, flow velocity increased from ~10 μm/s when there was no thermal biasing to ~112 μm/s when a heat flux was applied. PMID:22932955

  6. Electrical biasing and voltage contrast imaging in a focused ion beam system

    SciTech Connect

    Campbell, A.N.; Soden, J.M.; Rife, J.L.; Lee, R.G.

    1995-09-01

    We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of their application to the failure analysis of complex ICs. We discuss the necessary changes in system operating parameters to perform biased voltage contrast imaging.

  7. Rapid single flux quantum digital-to-analog converter for ac voltage standard

    NASA Astrophysics Data System (ADS)

    Maezawa, Masaaki; Hirayama, Fuminori; Suzuki, Motohiro

    2005-10-01

    A digital-to-analog (D/A) converter based on rapid single flux quantum (RSFQ) circuits is a potential device for establishing a new generation of ac voltage standards. We are developing RSFQ D/A converters that can generate an ac waveform with an accurately defined rms value. Our goal in the near future is the synthesis of an ac waveform with a 100-mV peak voltage that will allow accurate characterization of the thermal voltage converters currently used for setting ac-dc transfer standards. We have designed, fabricated and successfully tested key subsystems of the RSFQ D/A converter including a 10-stage pulse-number multiplier, a 1-bit slice of a pulse distributor and a 9.5-bit voltage multiplier.

  8. In-Plane Electric Polarization of Bilayer Graphene Nanoribbons Induced by an Interlayer Bias Voltage.

    PubMed

    Okugawa, Ryo; Tanaka, Junya; Koretsune, Takashi; Saito, Susumu; Murakami, Shuichi

    2015-10-01

    We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate that when the bias voltage is weak, the polarization shows opposite signs depending on the ribbon width modulo three. This nontrivial dependence is explained using a two-band effective model. A strong limit of the bias voltage in the tight-binding model shows either one-third or zero polarization, which agrees with the topological argument. PMID:26550741

  9. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    NASA Astrophysics Data System (ADS)

    E, Lotfi; H, Rezania; B, Arghavaninia; M, Yarmohammadi

    2016-07-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

  10. The effect of bias voltage on the morphology and wettability of plasma deposited titanium oxide films

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Li, Yan; Guo, Kai; Zhang, Jing

    2008-02-01

    Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF--PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC 3H 7) 4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30°. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).

  11. Phase-sensitive detection of both inductive and non-inductive ac voltages in ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Weiler, Mathias; Shaw, Justin M.; Nembach, Hans T.; Schoen, Martin A.; Boone, Carl T.; Silva, Thomas J.

    2014-03-01

    Spin pumping causes significant damping in ultrathin ferromagnetic/normal metal (NM) multilayers via spin-current generation of both dc and ac character in the NM system. While the nonlinear dc component has been investigated in detail by utilization of the inverse spin Hall effect (iSHE) in NMs, much less is known about the linear ac component that is presumably much larger in the small-excitation limit. We measured generated ac voltages in a wide variety of Permalloy/NM multilayers via vector-network-analyzer ferromagnetic resonance. We employ a custom, impedance-matched, broadband microwave coupler that features a ferromagnetic thin film reference resonator to accurately compare ac voltage amplitudes and phases between varieties of multilayers. By use of the fact that inductive and ac iSHE signals are phase-shifted by π/2, we find that inductive signals are major contributors in all investigated samples. It is only by comparison of the phase and amplitude of the recorded ac voltages between multiple samples that we can extract the non-inductive contributions due to spin-currents. Voltages due to the ac iSHE in Permalloy(10nm)/platinum(5nm) bilayers are weaker than inductive signals, in agreement with calculations based upon recent theoretical predictions. M.W. acknowledges financial support by the German Academic Exchange service (DAAD).

  12. Spin backflow and ac voltage generation by spin pumping and the inverse spin Hall effect.

    PubMed

    Jiao, HuJun; Bauer, Gerrit E W

    2013-05-24

    The spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant polarization component parallel to the precession axis and a rotating one normal to the magnetization. The former is now routinely detected as a dc voltage induced by the inverse spin Hall effect (ISHE). Here we compute ac ISHE voltages much larger than the dc signals for various material combinations and discuss optimal conditions to observe the effect. The backflow of spin is shown to be essential to distill parameters from measured ISHE voltages for both dc and ac configurations. PMID:23745937

  13. New internal multi-range resistors for ac voltage calibration by using TVC

    NASA Astrophysics Data System (ADS)

    Ali, Rasha S. M.

    2015-10-01

    Accurate calibration of ac voltages up to 1000 V by using thermal converters requires range resistors connected in series with the converter. The combination of a thermal converter and range resistor is known as the thermal voltage converter. In this paper, multi-range internal range resistors are designed and implemented in the National Institute for Standards (NIS), Egypt to cover the ac voltage ranges from 10 V to 750 V. The range resistor values are 2 kΩ, 10 kΩ, 20 kΩ, 40 kΩ, 100 kΩ, and 150 kΩ to cover the voltage ranges 10 V, 50 V, 100 V, 200 V, 500 V, and 750 V, respectively. The six range resistors are mounted in series with a single-junction thermo-element in the same box to provide a new thermal voltage converter. The required range resistor is selected by using a six-pin selector switch. Each resistor is connected to a selector pin. The new thermal voltage converter ranges are automatically calibrated against other standard thermal voltage converters at different frequencies by using a LabVIEW program to determine their ac-dc transfer difference at each range. The expanded uncertainties are estimated according to the GUM for all ranges at different frequencies. The performance of the new thermal voltage converter is also evaluated by comparing its ac-dc differences and its accuracy in measuring the ac voltage at different frequencies with a traditional thermal voltage converter.

  14. A Generalised Fault Protection Structure Proposed for Uni-grounded Low-Voltage AC Microgrids

    NASA Astrophysics Data System (ADS)

    Bui, Duong Minh; Chen, Shi-Lin; Lien, Keng-Yu; Jiang, Jheng-Lun

    2016-04-01

    This paper presents three main configurations of uni-grounded low-voltage AC microgrids. Transient situations of a uni-grounded low-voltage (LV) AC microgrid (MG) are simulated through various fault tests and operation transition tests between grid-connected and islanded modes. Based on transient simulation results, available fault protection methods are proposed for main and back-up protection of a uni-grounded AC microgrid. In addition, concept of a generalised fault protection structure of uni-grounded LVAC MGs is mentioned in the paper. As a result, main contributions of the paper are: (i) definition of different uni-grounded LVAC MG configurations; (ii) analysing transient responses of a uni-grounded LVAC microgrid through line-to-line faults, line-to-ground faults, three-phase faults and a microgrid operation transition test, (iii) proposing available fault protection methods for uni-grounded microgrids, such as: non-directional or directional overcurrent protection, under/over voltage protection, differential current protection, voltage-restrained overcurrent protection, and other fault protection principles not based on phase currents and voltages (e.g. total harmonic distortion detection of currents and voltages, using sequence components of current and voltage, 3I0 or 3V0 components), and (iv) developing a generalised fault protection structure with six individual protection zones to be suitable for different uni-grounded AC MG configurations.

  15. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

    NASA Astrophysics Data System (ADS)

    Green, Ron; Lelis, Aivars; Habersat, Daniel

    2016-04-01

    This work reports on three important aspects of threshold-voltage instability in SiC power MOSFETs: (1) the threshold-voltage bias-temperature instability observed in commercial devices from two leading manufacturers, (2) a summary of the basic mechanisms driving this instability, and (3) the need for an improved test method for evaluating these devices. Even under significant overstress conditions, no negative threshold-voltage shift was observed in the most-recent-vintage commercial devices from one of the manufacturers during a -15 V, 175 °C negative-bias temperature stress lasting 120 h.

  16. Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

    NASA Astrophysics Data System (ADS)

    Maeda, Takuya; Okada, Masaya; Ueno, Masaki; Yamamoto, Yoshiyuki; Horita, Masahiro; Suda, Jun

    2016-09-01

    The photocurrent of GaN vertical Schottky barrier diodes was investigated under sub-bandgap wavelength light irradiation. Under a low reverse bias voltage, the photocurrent is induced by internal photoemission, while under a high reverse bias voltage, the photocurrent increases significantly with the bias voltage. This is due to sub-bandgap optical absorption in a depletion region due to the Franz–Keldysh effect. The voltage and wavelength dependences of the photocurrent are successfully explained quantitatively.

  17. Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

    NASA Astrophysics Data System (ADS)

    Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

    We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

  18. Dynamical thermal conductivity of bilayer graphene in the presence of bias voltage

    NASA Astrophysics Data System (ADS)

    Rezania, H.; Yarmohammadi, M.

    2016-01-01

    We study dynamical thermal conductivity of doped biased bilayer graphene for both AA and AB-stacking in the context of tight binding model Hamiltonian. The effects of bias voltage and chemical potential on the behavior of dynamical thermal conductivity are discussed for different stacking of bilayer graphene. Green's function approach has been implemented to find the behavior of thermal conductivity of bilayer graphene within linear response theory. We have found that thermal conductivity decreases with chemical potential for different values of temperature and frequency. Also thermal conductivity of AB stacked bilayer graphene versus bias voltage includes a peak for each value of chemical potential. Furthermore we study the frequency dependence of thermal conductivity of AA stacked bilayer graphene for different values of temperature and bias voltage.

  19. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  20. ACS After SM4: Characterization And Mitigation Of WFC Bias Striping

    NASA Astrophysics Data System (ADS)

    Grogin, Norman A.; Lim, P.; Hook, R. N.; Maybhate, A.; Loose, M.

    2010-01-01

    All images taken with the restored ACS Wide Field Camera (WFC) exhibit a modest additional noise component in the bias level that is constant along rows of the two WFC CCDs (spanning both amplifier quadrants on each CCD). We believe this to be caused by low-frequency (1 mHz to 1 Hz) 1/f-noise on the reference voltage from the new Application-Specific Integrated Circuit (ASIC) that governs the offset of the pixel signal subsequent to its correlated double-sampling. The striping amplitude is roughly Gaussian with FWHM = 2e-, as compared with the underlying WFC read noise of 4.2e- (gain=2). The OPUS pipeline superbias and superdark images, averaged from dozens of individual biases and darks, show very little residual striping and thus do not exacerbate the striping in the pipeline-processed science images. The impact to most science programs will be insignificant; however we recognize that the highly correlated nature of this striping may complicate analyses at very low surface brightness, particularly for images where the background counts are also low. In addition to our detailed characterizations of the striping, we present results from our testing of stripe-removal codes to correct a broad variety of science images. We have determined that the WFC overscan is a poor estimator of the stripe amplitude, requiring the stripes to be fit across the imaging area where care is needed to avoid removing source flux as well. STScI is making these algorithms available to the community as stand-alone software to be run in conjunction with by-hand CALACS processing.

  1. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  2. Decoupled luminance decay and voltage drift in polymer light-emitting electrochemical cells: Forward bias vs. reverse bias operation

    NASA Astrophysics Data System (ADS)

    Gao, Jun; AlTal, Faleh

    2014-04-01

    Sandwich polymer light-emitting electrochemical cells (LECs) with low electrolyte loading have been investigated. The LECs can be turned on to emit light at low voltages by applying either a forward- or reverse-bias current. The reverse operation, however, displays significantly higher luminance, frozen-junction behavior, and voltage instability. Moreover, the LECs display de-coupled luminance decay and voltage drift. Under forward-current operation, the luminance decreases for most of the test duration, while the operating voltage remains nearly unchanged. Under reverse-current operation, the luminance remains constant for over 200 h while the operating voltage more than doubles. The highly asymmetric device characteristics between forward and reverse operation can be explained by the different doping profiles created when the initial charge injection barriers are different. Under forward-current operation, the LEC film is predominantly p-doped. This leads to heavy luminescence quenching but a stable operating voltage. Under reverse operation, a predominately n-doped film is responsible for the higher luminance, frozen-junction behavior, and voltage drift. The anomalous device characteristics offer additional insights into the complex operating mechanism of LECs and the behaviours of a doped luminescent polymer.

  3. Voltage-Biased Magnetic Sensors Based on Tuned Varistors

    NASA Astrophysics Data System (ADS)

    Pandey, R. K.; Stapleton, William. A.; Sutanto, Ivan; Shamsuzzoha, M.

    2015-04-01

    In this paper, we explore the possibility of finding practical applications when the nonlinear current-voltage ( I- V) characteristics of a varistor are modified by the application of external magnetic fields. With this goal in mind, varistors based on a pseudobrookite oxide semiconductor have been studied. Pseudobrookite (PsB) is a wide bandgap n-type semiconductor with the bandgap of 2.77 eV. It is also weakly ferromagnetic. The "voltage-dependent resistor" (VDR) mode of the magnetically-tuned pseudobrookite varistors offers an opportunity to advance magnetic sensor technology. The resistive and magnetoresistive parameters of PsB VDRs exhibit good responses to applied magnetic fields and they can therefore be the basis for the fabrication of simple yet practical magnetic sensors. These sensors can cover the range of magnetic fields between 0 and 4500 Oe with good accuracy, and could possibly be considered as a substitute for Hall Effect-based sensors for many applications. Also, due to their simple structure, they would be rugged and not susceptible to abuses. They may also be suitable for applications in hazardous environments such as high temperatures and atmospheres having the presence of radiation, such as neutrons, protons, etc. It is also possible that these novel sensors could be suitable for geological applications such as in well logging in search of energy sources.

  4. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  5. Cryocooler operation of SNIS Josephson arrays for AC Voltage standards

    NASA Astrophysics Data System (ADS)

    Sosso, A.; De Leo, N.; Fretto, M.; Monticone, E.; Roncaglione, L.; Rocci, R.; Lacquaniti, V.

    2014-05-01

    Avoiding liquid helium is now a worldwide issue, thus cryocooler operation is becoming mandatory for a wider use of superconductive electronics. Josephson voltage standards hold a peculiar position among superconducting devices, as they are in use in high precision voltage metrology since decades. Higher temperature operation would reduce the refrigerator size and complexity, however, arrays of Josephson junctions made with high temperature superconductors for voltage standard applications are not to date available. The SNIS (Superconductor-Normal metal-Insulator-Superconductor) junction technology developed at INRIM, based on low temperature superconductors, but capable of operation well above liquid helium temperature, is interesting for application to a compact cryocooled standard, allowing to set a compromise between device and refrigerator requirements. In this work, the behavior of SNIS devices cooled with a closed-cycle refrigerator has been investigated, both in DC and under RF irradiation. Issues related to thermal design of the apparatus to solve specific problems not faced with liquid coolants, like reduced cooling power and minimization of thermal gradients for uniform operation of the chip are discussed in detail.

  6. Development of Low-Frequency AC Voltage Measurement System Using Single-Junction Thermal Converter

    NASA Astrophysics Data System (ADS)

    Amagai, Yasutaka; Nakamura, Yasuhiro

    Accurate measurement of low-frequency AC voltage using a digital multimeter at frequencies of 4-200Hz is a challenge in the mechanical engineering industry. At the National Metrology Institute of Japan, we developed a low-frequency AC voltage measurement system for calibrating digital multimeters operating at frequencies down to 1 Hz. The system uses a single-junction thermal converter and employs a theoretical model and a three-parameter sine wave fitting algorithm based on the least-square (LS) method. We calibrated the AC voltage down to 1Hz using our measurement system and reduced the measurement time compared with that using thin-film thermal converters. Our measurement results are verified by comparison with those of a digital sampling method using a high-resolution analog-to-digital converter; our data are in agreement to within a few parts in 105. Our proposed method enables us to measure AC voltage with an uncertainty of 25 μV/V (k = 1) at frequencies down to 4 Hz and a voltage of 10 V.

  7. Bias voltages at microelectrodes change neural interface properties in vivo.

    PubMed

    Johnson, M D; Otto, K J; Williams, J C; Kipke, D R

    2004-01-01

    Rejuvenation of iridium microelectrode sites, which involves applying a 1.5 V bias for 4 s, has been shown to reduce site impedances of chronically implanted microelectrode arrays. This study applied complex impedance spectroscopy measurements to an equivalent circuit model of the electrode-tissue interface. Rejuvenation was found to cause a transient increase in electrode conductivity through an IrO2 layer and a decrease in the surrounding extracellular resistance by 85 +/- 1% (n=73, t-test p < 0.001) and a decrease in the immediate site resistance by 44 +/- 7% (n=73, t-test p<0.001). These findings may be useful as an intervention strategy to prolong the lifetime of chronic microelectrode implants for neuroprostheses. PMID:17271203

  8. High voltage AC/AC electrochemical capacitor operating at low temperature in salt aqueous electrolyte

    NASA Astrophysics Data System (ADS)

    Abbas, Qamar; Béguin, François

    2016-06-01

    We demonstrate that an activated carbon (AC)-based electrochemical capacitor implementing aqueous lithium sulfate electrolyte in 7:3 vol:vol water/methanol mixture can operate down to -40 °C with good electrochemical performance. Three-electrode cell investigations show that the faradaic contributions related with hydrogen chemisorption in the negative AC electrode are thermodynamically unfavored at -40 °C, enabling the system to work as a typical electrical double-layer (EDL) capacitor. After prolonged floating of the AC/AC capacitor at 1.6 V and -40°C, the capacitance, equivalent series resistance and efficiency remain constant, demonstrating the absence of ageing related with side redox reactions at this temperature. Interestingly, when temperature is increased back to 24 °C, the redox behavior due to hydrogen storage reappears and the system behaves as a freshly prepared one.

  9. Bidirectional voltage biased implication operations using SiOx based unipolar memristors

    NASA Astrophysics Data System (ADS)

    Zhou, Fei; Guckert, Lauren; Chang, Yao-Feng; Swartzlander, Earl E.; Lee, Jack

    2015-11-01

    This work presents a material implication implementation using SiOx based unipolar memristors. SiOx memristors with TaN/SiOx/Si structures have been fabricated, characterized, and used in the implication operation. The implication function and its truth table were well implemented using both positive and negative voltages for load resistor bias. The voltage range for the implication operation is reduced due to bidirectional bias. The key factors for the operation of material implication, such as load resistance, characteristics of the memristor, and design tradeoffs were investigated. This work demonstrates that unipolar SiOx based memristors are suitable for logic operations.

  10. Effects of applied bias voltage in tunnel junctions with ferroelectric barrier

    NASA Astrophysics Data System (ADS)

    Zhang, L. B.; Tang, M. H.; Li, J. C.; Xiao, Y. G.

    2012-02-01

    Effects of applied bias voltage on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions with ferroelectric barrier and dissimilar ferromagnetic electrodes are theoretically investigated. Taking into account the electric field effect on permittivity of ferroelectric films, the applied bias voltage could creates a sizable influence on the permittivity-dependent tunneling electroresistance and tunneling magnetoresistance. The calculations could indicate a prospective way for reading the states of tunnel junction with a pronounced difference in resistance, which may provide some contributions to practical applications in memories and spintronics.

  11. Nonlinear magnetization relaxation of superparamagnetic nanoparticles in superimposed ac and dc magnetic bias fields

    NASA Astrophysics Data System (ADS)

    Titov, Serguey V.; Déjardin, Pierre-Michel; El Mrabti, Halim; Kalmykov, Yuri P.

    2010-09-01

    The nonlinear ac response of the magnetization M(t) of a uniaxially anisotropic superparamagnetic nanoparticle subjected to both ac and dc bias magnetic fields of arbitrary strengths and orientations is determined by averaging Gilbert’s equation augmented by a random field with Gaussian white-noise properties in order to calculate exactly the relevant statistical averages. It is shown that the magnetization dynamics of the uniaxial particle driven by a strong ac field applied at an angle to the easy axis of the particle (so that the axial symmetry is broken) alters drastically leading to different nonlinear effects due to coupling of the thermally activated magnetization reversal mode with the precessional modes of M(t) via the driving ac field.

  12. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

    NASA Astrophysics Data System (ADS)

    Demirezen, S.; Kaya, A.; Yerişkin, S. A.; Balbaşı, M.; Uslu, İ.

    In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε‧, ε‧, tanδ, electric modulus (M‧ and M″) and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε‧, ε‧, tanδ, M‧, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε‧, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε‧ and ε″ values at low frequencies may be attributed to the Maxwell-Wagner and space charge polarization. The high values of ε‧ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M‧ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M‧ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε‧, ε″, tanδ, M‧, M″ and ac electric conductivity (σac) is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization.

  13. The Design of Monolithic AC-coupled 1-Dimensional Voltage-Controlled-Oscillators (VCOs) Phased-array Network

    NASA Astrophysics Data System (ADS)

    Lie, Donald Y. C.; Lopez, J.

    2011-04-01

    A fully monolithic 1-Dimensional (1-D) AC-coupled Voltage-Controlled-Oscillators (VCOs) phased-array network design will be presented in this paper. This radio-frequency (RF) VCO array integrates on-chip inductors, varactors and bias current sources and it contains an odd number of VCOs AC-coupled through on-chip switchable resistor networks using MOSFETs. The measured results and SPICE simulated performance of the monolithic unit cell VCO agree reasonably well. Realistic circuit simulations in IBM 7HP 0.18 um BiCMOS design kit indicate promising results of the 1-D coupled-VCO array by showing the design can control the phasing of this on-chip VCO-array by means of tuning the edge elements and/or by varying the coupling strength via different resistor values using the on-chip MOSFET switches. Simulation data shows that it can offer high directivity and a possible element-to-element phase tuning arrangement that allows a ˜±20-30° degree coverage from broadside without the need for phase shifters or additional circuitry complexity. This AC-coupled 1-D VCO array, therefore, shows great potential for RF active antennas applications to perform wide angle beam steering for the highly used S-band.

  14. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    NASA Astrophysics Data System (ADS)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-12-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  15. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    PubMed

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  16. Magnetic nanoparticle thermometer: an investigation of minimum error transmission path and AC bias error.

    PubMed

    Du, Zhongzhou; Su, Rijian; Liu, Wenzhong; Huang, Zhixing

    2015-01-01

    The signal transmission module of a magnetic nanoparticle thermometer (MNPT) was established in this study to analyze the error sources introduced during the signal flow in the hardware system. The underlying error sources that significantly affected the precision of the MNPT were determined through mathematical modeling and simulation. A transfer module path with the minimum error in the hardware system was then proposed through the analysis of the variations of the system error caused by the significant error sources when the signal flew through the signal transmission module. In addition, a system parameter, named the signal-to-AC bias ratio (i.e., the ratio between the signal and AC bias), was identified as a direct determinant of the precision of the measured temperature. The temperature error was below 0.1 K when the signal-to-AC bias ratio was higher than 80 dB, and other system errors were not considered. The temperature error was below 0.1 K in the experiments with a commercial magnetic fluid (Sample SOR-10, Ocean Nanotechnology, Springdale, AR, USA) when the hardware system of the MNPT was designed with the aforementioned method. PMID:25875188

  17. Magnetic Nanoparticle Thermometer: An Investigation of Minimum Error Transmission Path and AC Bias Error

    PubMed Central

    Du, Zhongzhou; Su, Rijian; Liu, Wenzhong; Huang, Zhixing

    2015-01-01

    The signal transmission module of a magnetic nanoparticle thermometer (MNPT) was established in this study to analyze the error sources introduced during the signal flow in the hardware system. The underlying error sources that significantly affected the precision of the MNPT were determined through mathematical modeling and simulation. A transfer module path with the minimum error in the hardware system was then proposed through the analysis of the variations of the system error caused by the significant error sources when the signal flew through the signal transmission module. In addition, a system parameter, named the signal-to-AC bias ratio (i.e., the ratio between the signal and AC bias), was identified as a direct determinant of the precision of the measured temperature. The temperature error was below 0.1 K when the signal-to-AC bias ratio was higher than 80 dB, and other system errors were not considered. The temperature error was below 0.1 K in the experiments with a commercial magnetic fluid (Sample SOR-10, Ocean Nanotechnology, Springdale, AR, USA) when the hardware system of the MNPT was designed with the aforementioned method. PMID:25875188

  18. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  19. Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

    SciTech Connect

    Laakso, M. Research Inst. for High Energy Physics , Helsinki )

    1992-03-01

    Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.

  20. Nonlinear control of voltage source converters in AC-DC power system.

    PubMed

    Dash, P K; Nayak, N

    2014-07-01

    This paper presents the design of a robust nonlinear controller for a parallel AC-DC power system using a Lyapunov function-based sliding mode control (LYPSMC) strategy. The inputs for the proposed control scheme are the DC voltage and reactive power errors at the converter station and the active and reactive power errors at the inverter station of the voltage-source converter-based high voltage direct current transmission (VSC-HVDC) link. The stability and robust tracking of the system parameters are ensured by applying the Lyapunov direct method. Also the gains of the sliding mode control (SMC) are made adaptive using the stability conditions of the Lyapunov function. The proposed control strategy offers invariant stability to a class of systems having modeling uncertainties due to parameter changes and exogenous inputs. Comprehensive computer simulations are carried out to verify the proposed control scheme under several system disturbances like changes in short-circuit ratio, converter parametric changes, and faults on the converter and inverter buses for single generating system connected to the power grid in a single machine infinite-bus AC-DC network and also for a 3-machine two-area power system. Furthermore, a second order super twisting sliding mode control scheme has been presented in this paper that provides a higher degree of nonlinearity than the LYPSMC and damps faster the converter and inverter voltage and power oscillations. PMID:24906895

  1. Continuous Path Tracking Control by Considering Voltage Saturation and Current Saturation for AC Servo Motor

    NASA Astrophysics Data System (ADS)

    Sazawa, Masaki; Ohishi, Kiyoshi; Katsura, Seiichiro

    Continuous path tracking control is an important technology for the position control system such as factory automation field. Particulaly, large torque is required for continuous path tracking control at its start position and its goal position. Each AC servo motor of continuous path tracking control have limitation of current and voltage. Therefore, in controlling a multi-degree-of-freedom continuous path tracking control system, even if only the motor torque of one axis has the current limitation, the actual position response is not often equal to the desired trajectory reference. In order to overcome these problems, this paper proposes a new continuous path tracking control algorithm by considering both the saturation of voltage and current. The proposed method assures the coordinated motion by considering the saturation of voltage and current. The effectiveness of the proposed method is confirmed by the experimental results in this paper.

  2. An Approach to Suppressing Both Shaft Voltage and Leakage Current in an AC Motor Driven by a Voltage-Source PWM Inverter

    NASA Astrophysics Data System (ADS)

    Doumoto, Takafumi; Akagi, Hirofumi

    This paper proposes a practical approach to suppressing both shaft voltage and leakage current in an ac motor driven by a voltage-source PWM inverter. This approach is characterized by using a neutral line of the ac motor. A common-mode inductor is connected between the inverter and the motor. Moreover, a resistor and a capacitor are connected in series between the motor neutral point and the inverter negative dc bus. This unique circuit configuration makes the common-mode inductor effective in reducing the common-mode voltage appearing at the motor terminals. As a result, both shaft voltage and ground current are significantly suppressed with low cost. Over-voltages at the end of a cable can be suppressed by a normal-mode inductor and a resistor which are connected in parallel. The validity and effectiveness of the new approach are verified by experimental results from a 5-kVA laboratory system.

  3. Induced Voltage Behavior on Pipelines Due to HV AC Interference: Effective Length Concept

    NASA Astrophysics Data System (ADS)

    Nassereddine, Mohamad; Rizk, Jamal; Nagrial, Mahmood; Hellany, Ali

    2015-04-01

    High-voltage infrastructure upgrade is expending due to the growth in populations. To save on easement cost and to reduce the environmental impact of these projects, HV transmission lines occupy the same easement as pipelines in many cases. This joint easement introduces the AC interference between transmission lines and pipelines. The induced voltage can reach a limit which will jeopardize the human safety. The cited research studies the induced voltage under the presence of the overhead earth wire (OHEW) using the shielding factor. The work in this paper studies the induced voltage using the OHEW section current along with the superposition theorem. The simulations are compared to the existing research methods. The case study along with the theoretical study discusses the advance accuracy of the proposed method over the existing shield factor used in the presence research. Furthermore, they introduce the effective length along with the effective shielding factor, which aids in computing the additional effect that the OHEW has on the induced voltage.

  4. Voltage Controlled Exchange Bias in a Cr2O3 based heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3, which has a voltage controlled net magnetization at the (0001) surface. Voltage control of magnetism in a Cr2O3 thin film system has presented significant challenges. In this study we explore the electric control of exchange bias in an all-thin-film system of decreasing chromia film thickness with significant implications for scalability of ultra-low power memory and logical devices. Cross-sectional HRTEM indicates that grain boundaries in the metallic bottom electrode propagate into the Cr2O3 thin film with detrimental effects on leakage currents. We address this issue via a three-step growth method for the deposition of epitaxial Pd on sapphire. The resulting microstructure of the films is analyzed by reflection high-energy electron diffraction, tunneling electron microscopy and x-ray diffraction. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  5. Metrological traceability for AC High-Voltage in Inmetro up to 40 kV

    NASA Astrophysics Data System (ADS)

    Vitorio, P. C. O.; de Lima, V. R.; Borges Filho, O.; de Souza, L. A. A.; Asencios, O. W. G.

    2016-07-01

    This paper refers to a project carried out in Inmetro aiming to provide internal metrological traceability for 60 Hz AC High-Voltage up to 40 kV. It presents details about the method used, its equations and obtained results. A capacitance and tanb bridge, with a built-in current comparator, was used in combination with two standard capacitors to calibrate a standard potential transformer (PT), both in ratio and phase angle. The results obtained by Inmetro showed good agreement with PTB ones, for the same PT. The maximum estimated uncertainty was 0,0049% for ratio error and 104 μrad for phase angle error.

  6. Spin Hall voltages from a.c. and d.c. spin currents

    PubMed Central

    Wei, Dahai; Obstbaum, Martin; Ribow, Mirko; Back, Christian H.; Woltersdorf, Georg

    2014-01-01

    In spin electronics, the spin degree of freedom is used to transmit and store information. To this end the ability to create pure spin currents—that is, without net charge transfer—is essential. When the magnetization vector in a ferromagnet–normal metal junction is excited, the spin pumping effect leads to the injection of pure spin currents into the normal metal. The polarization of this spin current is time-dependent and contains a very small d.c. component. Here we show that the large a.c. component of the spin currents can be detected efficiently using the inverse spin Hall effect. The observed a.c.-inverse spin Hall voltages are one order of magnitude larger than the conventional d.c.-inverse spin Hall voltages measured on the same device. Our results demonstrate that ferromagnet–normal metal junctions are efficient sources of pure spin currents in the gigahertz frequency range. PMID:24780927

  7. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    NASA Astrophysics Data System (ADS)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  8. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  9. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

    DOEpatents

    You, Chun-Yeol; Bader, Samuel D.

    2001-01-01

    A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.

  10. Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs

    NASA Astrophysics Data System (ADS)

    Tang, Z.; Wie, C. R.

    2010-03-01

    In this paper, the degradation of hydrogenated amorphous silicon thin film transistors under a self-heating stress (SHS) condition is investigated by analyzing the capacitance-voltage characteristics of gate-to-drain capacitance ( Cgd) and gate-to-source capacitance ( Cgs). The very different characteristics of Cgd- V g and Cgs- V g show different stress-induced density of states (DOS) property at the drain side and source side of channel. In a long channel device, the Cgd and Cgs characteristics could be explained by the deep states profile which corresponds to the non-uniform threshold voltage profile induced by the bias temperature stress only. The capacitance-voltage and current-voltage curves, simulated using the ATLAS 2D simulator based on the non-uniform defect states profile, agreed well with the measured data. In a short channel device, the simulation fitting of the Cgd and Cgs data required a non-uniform defect states profile, which is substantially modified from the long channel profile. This was interpreted in terms of a significant contribution of the non-uniform temperature distribution, caused by stress-induced self-heating effect in the short channel device, to the defect states density profile in the channel. A decreased density of conduction band tail states at the source end, corresponding to the increased deep Gaussian states, enabled a good simulation fit in the short channel device.

  11. Bias voltage and corrosion effects in rf ovens in electron cyclotron resonance ion source

    SciTech Connect

    Cavenago, M.; Galata, A.; Kulevoy, T.; Petrenko, S.

    2006-03-15

    Induction-heated miniaturized ovens were successfully coupled to electron cyclotron resonance ion sources for the production of copper and silver ion beams. Experiments with tin and praseodymium ion beams are here presented; some preliminary tests for titanium are also described. In the latter case (and in general over a 1800 K temperature) a molybdenum rf coil is used. The results with tin show currents comparable to silver (after obvious correction for isotopic abundance), with some operational difficulty due to frequent pouring of liquid sample out of crucible. The effects of a bias voltage V{sub b} applied to the Sn sample are reported. Cold sputter probes are compared. The results with praseodymium show lower currents than tin and large sensitivity to mixing gas used: nitrogen emerged as the best compromise against oxygen (possibly because this oxidizes the sample) and against inert noble gases. Optimal bias voltage for Pr (V{sub b} from -50 to -300 V) is much smaller than for silver (V{sub b} congruent with -1 kV)

  12. Behavior of Negative Hydrogen Ion and its Beam by Bias and Beam Extraction Voltages

    NASA Astrophysics Data System (ADS)

    Nakano, Haruhisa; Tsumori, Katsuyoshi; Kisaki, Masashi; Ikeda, Katsunori; Geng, Shaofei; Nagaoka, Kenichi; Osakabe, Masaki; Takeiri, Yasuhiko; Kaneko, Osamu; Serianni, Gianluigi; Agostinetti, Piero; Sartori, Emanuele; Brombin, Matteo; Wimmer, Christian

    2015-09-01

    Negative hydrogen ion (H-) dynamics from production to beam extraction in H- source for fusion have not been enough understood in cesium-seeded negative-hydrogen-ion sources. This dynamics understanding contributes constructions of higher performance ion sources. The H- is produced on and emitted from plasma grid electrode (PG) which is boundary electrode between source plasma and beam. The H- density in the vicinity of the PG decreased with bias voltage (between PG and arc chamber) by suppression of H- emission and/or yield. The H- density decrement was observed in H- beam extraction phase and penetrated to 30 mm depth from PG. The depth and H- beam current decreased with bias voltage. One of the possibilities which explain it is extracted H- coming from space in the vicinity of the PG. An object made of ceramic was inserted above the PG aperture. The H- beam intensity decreased if the object was set 9 mm from PG. This does not conflict with the possibility. This work is supported by NIFS Research Programs NIFS13ULRR008 and NIFS13ULRR702, and JSPS KAKENHI Grant Numbers 25800307 and 25249134.

  13. Application of bias voltage to tune the resonant frequency of membrane-based electroactive polymer energy harvesters

    NASA Astrophysics Data System (ADS)

    Dong, Lin; Grissom, Michael; Fisher, Frank T.

    2016-05-01

    Vibration-based energy harvesting has been widely investigated to as a means to generate low levels of electrical energy for applications such as wireless sensor networks. However, for optimal performance it is necessary to ensure that resonant frequencies of the device match the ambient vibration frequencies for maximum energy harvested. Here a novel resonant frequency tuning approach is proposed by applying a bias voltage to a pre-stretched electroactive polymer (EAP) membrane, such that the resulting changes in membrane tension can tune the device to match the environmental vibration source. First, a material model which accounts for the change in properties due to the pre-stretch of a VHB 4910 EAP membrane is presented. The effect of the bias voltage on the EAP membrane, which induces an electrostatic pressure and corresponding reduction in membrane thickness, are then determined. The FEM results from ANSYS agree well with an analytical hyperelastic model of the activation response of the EAP membrane. Lastly, through a mass-loaded circular membrane vibration model, the effective resonant frequency of the energy harvester can be determined as a function of changes in membrane tension due to the applied bias voltage. In the case of an EAP membrane, pre-stretch contributes to the pre-stretch stiffness of the system while the applied bias voltage contributes to a change in bias voltage stiffness of the membrane. Preliminary experiments verified the resonant frequencies corresponding to the bias voltages predicted from the appropriate models. The proposed bias voltage tuning approach for the EAP membrane may provide a novel tuning strategy to enable energy harvesting from various ambient vibration sources in various application environments.

  14. Repeated voltage biasing improves unit recordings by reducing resistive tissue impedances.

    PubMed

    Johnson, Matthew D; Otto, Kevin J; Kipke, Daryl R

    2005-06-01

    Reactive tissue encapsulation of chronically implanted microelectrode probes can preclude long-term recording of extracellular action potentials. We investigated an intervention strategy for functionally encapsulated microelectrode sites. This method, known as "rejuvenation," involved applying a +1.5 V dc bias to an iridium site for 4 s. Previous studies have demonstrated that rejuvenation resulted in higher signal-to-noise ratios (SNRs) by decreasing noise levels, and reduced 1-kHz site impedances by decreasing the tissue interface resistances. In this study, we have investigated: 1) the duration of a single-voltage bias session and 2) the efficacy of multiple sessions. These questions were addressed through electrophysiological recordings, cyclic voltammetry, and modeling the electrode-tissue interface via an equivalent circuit model fit to impedance spectroscopy data. In the six implants studied, we found SNRs improved for 1-7 days with a peak typically occurring within 24 h of the voltage bias. Root-mean square (RMS) noise of the extracellular recordings decreased for 1-2 days, which paralleled a similar decrease in the adsorbed tissue resistance (Ren) from the model. Implants whose SNR effects lasted more than a day showed stabilized reductions in the extracellular tissue resistance (Rex) and cellular membrane area (Am). Subsequent stimulus sessions were found to drop neural tissue parameters consistently to levels observed immediately after surgery. In most cases, these changes did parallel an improvement in SNR. These findings suggest that rejuvenation may be a useful intervention strategy to prolong the lifetime of chronically implanted microelectrodes. PMID:16003894

  15. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  16. Increased deposition of polychlorinated biphenyls (PCBs) under an AC high-voltage power line

    NASA Astrophysics Data System (ADS)

    Öberg, Tomas; Peltola, Pasi

    2009-12-01

    There is considerable public concern regarding the potential risks to health of electromagnetic fields in general and high-voltage power lines in particular. As epidemiological findings are not supported by a clearly defined mechanism of direct magnetic field interactions with the human body, potential indirect effects are of interest. It has been suggested that an increased exposure to chemical pollutants could occur near high-voltage power lines due to formation and deposition of charged aerosols. The current study reports empirical evidence that seems to support this hypothesis. The deposition of 18 congeners of polychlorinated biphenyls (PCBs) was studied by collecting samples of pine needles under a 400 kV AC power line and at reference sites in the vicinity. Compared to the reference sites, the average deposition of PCB congeners under the power line was almost double. This difference between the two groups of samples was statistically significant. While it is premature to draw any conclusions regarding the human exposure near high-voltage power lines, the issue deserves attention and further investigations.

  17. Weak-Link Phenomena in AC-Biased Transition Edge Sensors

    NASA Astrophysics Data System (ADS)

    Gottardi, L.; Akamatsu, H.; Bruijn, M.; Gao, J.-R.; den Hartog, R.; Hijmering, R.; Hoevers, H.; Khosropanah, P.; Kozorezov, A.; van der Kuur, J.; van der Linden, A.; Ridder, M.

    2014-08-01

    It has been recently demonstrated that superconducting transition edge-sensors behave as weak-links due to longitudinally induced superconductivity from the leads with higher . In this work we study the implication of this behaviour for transition-edge sensors (TES)-based bolometers and microcalorimeter under ac bias. The TESs are read-out at frequencies between 1 and by a frequency domain multiplexer based on a linearised two-stage SQUID amplifier and high- lithographically made superconducting resonators. In particular, we focus on SRON TiAu TES bolometers with a measured dark noise equivalent power of developed for the short wavelength band for the instrument SAFARI on the SPICA telescope.

  18. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    DOEpatents

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  19. Voltage source ac-to-dc converters for high-power transmitters

    NASA Technical Reports Server (NTRS)

    Cormier, R.

    1990-01-01

    This work was done to optimize the design of the components used for the beam power supply, which is a component of the transmitters in the Deep Space Network (DSN). The major findings are: (1) the difference in regulation between a six-pulse and a twelve-pulse converter is at most 7 percent worse for the twelve-pulse converter; (2) the commutation overlap angle of a current source converter equals that of a voltage source converter with continuous line currents; (3) the sources of uncharacteristic harmonics are identified with SPICE simulation; (4) the use of an imperfect phase-shifting transformer for the twelve-pulse converter generates a harmonic at six times the line frequency; and (5) the assumptions usually made in analyzing converters can be relaxed with SPICE simulation. The results demonstrate the suitability of using SPICE simulation to obtain detailed performance predictions of ac-to-dc converters.

  20. Reverse bias voltage testing of 8 cm x 8cm silicon solar cells

    NASA Technical Reports Server (NTRS)

    Woike, T.; Stotlar, S.; Lungu, C.

    1991-01-01

    A study is described of the reverse I-V characteristics of the largest space qualified silicon solar cells currently available (8 x 8 cm) and of reverse bias voltage (RBV) testing performed on these cells. This study includes production grade cells, both with and without cover glass. These cells span the typical output range seen in production. Initial characteristics of these cells are measured at both 28 and 60 C. These measurements show weak correlation between cell output and reverse characteristics. Analysis is presented to determine the proper conditions for RBV stress to simulate shadowing effects on a particular array design. After performing the RBV stress the characteristics of the stressed cells are remeasured. The degradation in cell performance is highly variable which exacerbates cell mismatching over time. The effect of this degradation on array lifetime is also discussed. Generalization of these results to other array configurations is also presented.

  1. Strong interaction effects at a Fermi surface in a model for voltage-biased bilayer graphene

    NASA Astrophysics Data System (ADS)

    Armour, Wes; Hands, Simon; Strouthos, Costas

    2015-12-01

    Monte Carlo simulation of a 2+1 dimensional model of voltage-biased bilayer graphene, consisting of relativistic fermions with chemical potential μ coupled to charged excitations with opposite sign on each layer, has exposed noncanonical scaling of bulk observables near a quantum critical point found at strong coupling. We present a calculation of the quasiparticle dispersion relation E (k ) as a function of exciton source j in the same system, employing partially twisted boundary conditions to boost the number of available momentum modes. The Fermi momentum kF and superfluid gap Δ are extracted in the j →0 limit for three different values of μ , and support a strongly interacting scenario at the Fermi surface with Δ ˜O (μ ) . We propose an explanation for the observation μ

  2. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    SciTech Connect

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance.

  3. Nonclassical photon pair production in a voltage-biased Josephson junction.

    PubMed

    Leppäkangas, Juha; Johansson, Göran; Marthaler, Michael; Fogelström, Mikael

    2013-06-28

    We investigate electromagnetic radiation emitted by a small voltage-biased Josephson junction connected to a superconducting transmission line. At frequencies below the well-known emission peak at the Josephson frequency (2eV/h), extra radiation is triggered by quantum fluctuations in the transmission line. For weak tunneling couplings and typical Ohmic transmission lines, the corresponding photon-flux spectrum is symmetric around half the Josephson frequency, indicating that the photons are predominately created in pairs. By establishing an input-output formalism for the microwave field in the transmission line, we give further evidence for this nonclassical photon pair production, demonstrating that it violates the classical Cauchy-Schwarz inequality for two-mode flux cross correlations. In connection to recent experiments, we also consider a stepped transmission line, where resonances increase the signal-to-noise ratio. PMID:23848913

  4. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    NASA Astrophysics Data System (ADS)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  5. Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

    SciTech Connect

    Saito, Y. Tanamoto, T.; Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Hamaya, K.; Tezuka, N.

    2014-05-07

    Local magnetoresistance (MR) through silicon (Si) and its bias voltage (V{sub bias}) (bias current (I{sub bias})) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing V{sub bias}. This anomalous increase of local-MR as a function of V{sub bias} can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.

  6. Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process

    NASA Astrophysics Data System (ADS)

    Na, Sang-Chul; Chun, Min Chul; Jang, Gyuyeon; Shin, Hyejin; Kwon, Young-Sun; Kang, Bo Soo; Lee, Keundong; Yoon, Chansoo; Park, Bae Ho

    2016-06-01

    The set process in a unipolar resistance switching Pt/NiO/Pt thin film was conducted in two different ways: the current-biased set process (current sweep mode) and the voltage-biased set process (voltage sweep mode). In the current-biased set process, a compliance current setting was not necessary for continuing stable resistance switching. The resistance of the low resistance state, the reset and the set switching parameters were compared in both modes of the set processes. The distributions of the set parameters were found to be effectively reduced in the current-biased set process. These intriguing properties can be attributed to the prevention of an overshoot current during the set transition.

  7. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  8. Tuning of liquid-crystal birefringence using a square ac variable frequency voltage

    NASA Astrophysics Data System (ADS)

    Hamdi, Rachid; Falih Bendimerad, Djalal; Benkelfat, Badr-Eddine; Vinouze, Bruno

    2015-10-01

    We demonstrate that the birefringence of the liquid-crystal cell (LCC) can be varied by applying different frequency values of a single applied ac square voltage. For the experimental evaluation of the birefringence, associated with a certain wavelength λ, as a function of the frequency F LCC of the electrical signal applied to the LCC, we use, for the first time to our knowledge, what we call here a frequency-dependent transmission technique. It consists in measuring the transmission responses between crossed and parallel polarizers as a function of the frequency F LCC. Experimental tests were carried out using a 7 μm-thick E63 nematic LCC and a laser source emitting at λ = 1.55 μm with a launch power of -3 dBm. The tuning voltage V LCC applied to the LCC is an alternative square wave electrical signal whose frequency ranges from 0.5 to 15 kHz. The peak to peak amplitude of the electrical signal is 5 V. The curve of the measured variations of the optical path difference of the LCC versus the frequency F LCC has a positive slope. Application to the tuning of the center wavelength of the transmission response of a one stage hybrid birefringent filter is shown as a proof-of-principle test.

  9. Analysis of Fe Nanoparticles Using XPS Measurements Under D.C. or Pulsed-Voltage Bias

    SciTech Connect

    Suzer, Sefik; Baer, Donald R.; Engelhard, Mark H.

    2010-06-16

    The impact of solution exposure on the charging properties of oxide coatings on Fe metal-core oxide-shells has been examined by sample biasing during XPS measurements. The Fe nanoparticles were suspended in relatively unreactive acetone and were analyzed after particle containing solutions were deposited on SiO2/Si substrates, and/or Au substrates. The particle and substrate combinations were subjected to ± 10V d.c. biasing in the form of square waves (SQW) pulses with 5V amplitude. The samples experienced variable degrees of charging for which low energy electrons at ~1 eV, 20μA and low energy Ar+ ions were used to minimize. Application of d.c. bias and/or square wave pulses drastically influences the extent of charging, which is utilized to gather additional analytical information about the sample under investigation. This approach allows separation of otherwise overlapping peaks. Accordingly, the O1s peaks of the silicon oxide substrate, the iron oxide nanoparticles, and that of the casting solvent can be separated from each other. Similarly the C1s peak belonging to the solvent can be separated from that of the adventitious carbon. The charging shifts of the iron nanoparticles are strongly influenced by the surrounding solvent. Hence, acetone exhibits the largest shift, water the smallest, and methanol in between. Dynamical measurements performed by application of the voltage stress in the form of SQW pulses gives information about the time constants of the processes involved, which led us postulate that these charging properties we probe in these systems, stem mainly from ionic movement(s).

  10. Spectrographic analysis of bismuth-tin eutectic alloys by spark-ignited low-voltage ac-arc excitation

    NASA Technical Reports Server (NTRS)

    Huff, E. A.; Kulpa, S. J.

    1969-01-01

    Spectrographic method determines individual stainless steel components in molten bismuth-42 w/o tin eutectic to determine the solubility of Type 304 stainless steels. It utilizes the high sensitivity and precision of the spark-ignited, low-voltage ac-arc excitation of samples rendered homogeneous by dissolution.

  11. Plasmas in saline solutions sustained using rectified ac voltages: polarity and frequency effects on the discharge behaviour

    NASA Astrophysics Data System (ADS)

    Chang, Hung-wen; Hsu, Cheng-che

    2012-06-01

    In this work, three major problems, namely severe electrode damage, poor plasma stability and excess power consumption, arising in ac-driven plasmas in saline solutions are solved using a rectified power source. Diagnostic studies on the effects of power source polarity and frequency on the plasma behaviour are performed. Examination of I-V characteristics and temporally resolved light emission shows that the polarity significantly influences the current amplitude when the plasma exists, while the frequency alters the bubble dynamics, which in turn affects the plasma ignition voltage. When the plasma is driven by a rectified ac power source, the electrode erosion is reduced substantially. With a low frequency, moderate applied voltage and positively rectified ac power source (e.g. 100 Hz and 350 V), a stable plasma is ignited in nearly every power cycle.

  12. TES-Based X-ray Microcalorimeter Performances Under AC Bias and FDM for Athena

    NASA Astrophysics Data System (ADS)

    Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.; den Herder, J.-W.; den Hartog, R.; Hoevers, H.; Kelley, R. E.; Khosropanah, P.; Kilbourne, C. A.; van der Kuur, J.; Lee, S.-J.; van den Linden, A. J.; Porter, F. S.; Ravensberg, K.; Sadleir, J. E.; Smith, S. J.; Suzuki, T.; Wassell, E. J.; Kiviranta, M.

    2016-07-01

    Athena is a European X-ray observatory, scheduled for launch in ˜ 2028. Athena will employ a high-resolution imaging spectrometer called X-ray integral field unit (X-IFU), consisting of an array of ˜ 4000 transition edge sensor (TES) microcalorimeter pixels. For the readout of X-IFU, we are developing frequency domain multiplexing, which is the baseline readout system. In this paper, we report on the performance of a TES X-ray calorimeter array fabricated at Goddard Space Flight Center (GSFC) at MHz frequencies for the baseline of X-IFU detector. During single-pixel AC bias characterization, we measured X-ray energy resolutions (at 6 keV) of about 2.9 eV at both 2.3 and 3.7 MHz. Furthermore, in the multiplexing mode, we measured X-ray energy resolutions of about 2.9 eV at 1.3 and 1.7 MHz.

  13. Fabrication of Superhydrophobic Fiber Coatings by DC-Biased AC-Electrospinning

    NASA Astrophysics Data System (ADS)

    Gad-El-Hak, M.; Ochanda, F. O.; Samaha, M. A.; Vahedi Tafreshi, H.; Tepper, G. C.

    2011-11-01

    Mesh-like fiber mats of polystyrene (PS) were deposited using DC-biased AC-electrospinning. Superhydrophobic surfaces with water contact angles greater than 150° and gas fraction values of up to 97% were obtained. A Rheological study was conducted on these fiber surfaces and showed a decrease in shear stress when compared with a noncoated surface (no slip), making them excellent candidates for applications requiring the reduction of skin-friction drag in submerged surfaces. We have also shown that addition of a second, low-surface energy polymer to a solution of PS can be used to control the fiber internal porosity depending on the concentration of the second polymer. Contact-angle measurements on mats consisting of porous and nonporous fibers have been used to evaluate the role of the larger spaces between the fibers and the pores on individual fibers on superhydrophobicity. Financial support from the Defense Advanced Research Projects Agency (DARPA), contract number W91CRB-10-1-0003, is acknowledged.

  14. TES-Based X-ray Microcalorimeter Performances Under AC Bias and FDM for Athena

    NASA Astrophysics Data System (ADS)

    Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.; den Herder, J.-W.; den Hartog, R.; Hoevers, H.; Kelley, R. E.; Khosropanah, P.; Kilbourne, C. A.; van der Kuur, J.; Lee, S.-J.; van den Linden, A. J.; Porter, F. S.; Ravensberg, K.; Sadleir, J. E.; Smith, S. J.; Suzuki, T.; Wassell, E. J.; Kiviranta, M.

    2016-02-01

    Athena is a European X-ray observatory, scheduled for launch in ˜ 2028. Athena will employ a high-resolution imaging spectrometer called X-ray integral field unit (X-IFU), consisting of an array of ˜ 4000 transition edge sensor (TES) microcalorimeter pixels. For the readout of X-IFU, we are developing frequency domain multiplexing, which is the baseline readout system. In this paper, we report on the performance of a TES X-ray calorimeter array fabricated at Goddard Space Flight Center (GSFC) at MHz frequencies for the baseline of X-IFU detector. During single-pixel AC bias characterization, we measured X-ray energy resolutions (at 6 keV) of about 2.9 eV at both 2.3 and 3.7 MHz. Furthermore, in the multiplexing mode, we measured X-ray energy resolutions of about 2.9 eV at 1.3 and 1.7 MHz.

  15. A Servo System of AC Motor Based on Voltage Modulation Fitting for FPGA and Consideration of Voltage Saturation

    NASA Astrophysics Data System (ADS)

    Takahashi, Kenji; Kanmachi, Tosiyuki; Ohishi, Kiyoshi

    This paper proposes a space voltage vector modulation (SVM) method for a speed servo system to obtain a quick current response. The proposed SVM method shortens the control lag time of the conventional SVM inverter. In addition, this proposed method is easily implemented of the hardware using a FPGA (Field Programmable Gate Array) because the proposed SVM equations is transformed into the expressions that hardly needs multiplication. By using the proposed SVM method, the servo system realizes a quick and stable current control with wide bandwidth. Moreover, by using PI controllers considering the voltage saturation and the torque limiter to the speed servo system, the servo system carries out a stable speed control on voltage saturation. Both the proposed SVM method and the PI controllers considering the voltage saturation are applied to a speed servo system of a vector controlled induction motor. The effectiveness of both the proposed SVM method and the PI controllers considering voltage saturation is verified by the experimental results.

  16. Resonators coupled to voltage-biased Josephson junctions: From linear response to strongly driven nonlinear oscillations

    NASA Astrophysics Data System (ADS)

    Meister, S.; Mecklenburg, M.; Gramich, V.; Stockburger, J. T.; Ankerhold, J.; Kubala, B.

    2015-11-01

    Motivated by recent experiments in which a voltage-biased Josephson junction is placed in series with a resonator, the classical dynamics of the circuit is studied in various domains of parameter space. This problem can be mapped onto the dissipative motion of a single degree of freedom in a nonlinear time-dependent potential, where in contrast to conventional settings the nonlinearity appears in the driving while the static potential is purely harmonic. For long times the system approaches steady states which are analyzed in the underdamped regime over the full range of driving parameters including the fundamental resonance as well as higher harmonics and subharmonics. Observables such as the dc-Josephson current and the radiated microwave power give direct information about the underlying dynamics covering phenomena such as bifurcations, irregular motion, and up- and down-conversion. Due to their tunability, present and future setups provide versatile platforms to explore the changeover from linear response to strongly nonlinear behavior in driven dissipative systems under well defined conditions.

  17. Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; Blandler, S. R.; Porter, F. S.; Sadleir, J. E.; Kilbourne, C. A.; Bailey, C. N.; Finkbeiner, F. M.; Chervenak, J. A.; Adams, J. S.; Eckart, M. E.; Kelley, R. L.; Smith, S. J.; Linden, T. V. D.; Hoevers, H.; Kuur, J. V. D.; Lindeman, M.; Bruijn, M.; Hortog, R. D.; Kiviranta, M.

    2012-01-01

    In this paper we present the progress made at SRON in the read-out of GSFC x-ray transition-edge sensor (TES) micro-calorimeters in the frequency domain. The experiments reported so far, whose aim was to demonstrate an energy resolution of 2eV at 6 keV with a TES acting as a modulator, were carried out at frequencies below 700 kHz using a standard flux locked loop (FLL) SQUID read-out scheme. The TES read-out suffered from the use of sub-optimal circuit components, large parasitic inductances, low quality factor resonators and poor magnetic field shielding. We have developed a novel experimental set-up, which allows us to test several read-out schemes in a single cryogenic run. In this set-up, the TES pixels are coupled via superconducting transformers to 18 high-Q lithographic LC filters with resonant frequencies ranging between 2 and 5 MHz. The signal is amplified by a two-stage SQUID current sensor and baseband feedback is used to overcome the limited SQUID dynamic range. We study the single pixel performance as a function of TES bias frequency, voltage and perpendicular magnetic field.

  18. On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas

    SciTech Connect

    Agarwal, Ankur; Dorf, Leonid; Rauf, Shahid; Collins, Ken

    2012-03-15

    Higher gas densities and lower diffusion losses at higher operating pressures typically lead to increased charged species densities (and hence flux) for a constant power deposition in capacitively coupled plasmas (CCP). As a result, one would expect that the bias radio-frequency (rf) voltage required to deposit a given power in a CCP reactor decreases with increasing operating pressure. These observations may not hold true in multiple frequency CCPs, commonly used for dielectric etching in microelectronics fabrication, due to nonlinear interactions between the rf sources. Wafer-based measurements of the rf and self-generated direct current (dc) bias voltages in a dual-frequency capacitively coupled electronegative plasma were made, which indicate that the rf and dc voltages vary nonmonotonically with pressure. These experimental results are presented in this paper and a computational plasma model is used to explain the experimental observations for varying 60 MHz and 13 MHz powers in the Ar/CF{sub 4}/CHF{sub 3} plasma over a pressure range of 25 to 400 mTorr. The authors found that while the ion density increases with pressure, the increase is most dominant near the electrode with the high frequency source (60 MHz). The rf and dc bias voltages are ultimately influenced by both charged species density magnitudes and spatial profiles.

  19. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    NASA Astrophysics Data System (ADS)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  20. External dc bias field effects in the nonlinear ac stationary response of permanent dipoles in a uniaxial potential

    NASA Astrophysics Data System (ADS)

    Wei, Nijun; Coffey, William T.; Déjardin, Pirre-Michel; Kalmykov, Yuri P.

    External dc bias field effects on the nonlinear dielectric relaxation and dynamic Kerr effect of a system of permanent dipoles in a uniaxial mean field potential are studied via the rotational Brownian motion model. Postulated in terms of the infinite hierarchy of differential-recurrence equations for the statistical moments (the expectation value of the Legendre polynomials), the dielectric and Kerr effect ac stationary responses may be evaluated for arbitrary dc bias field strength via perturbation theory in the ac field. We have given two complementary approaches for treating the nonlinear effects. The first is based on perturbation theory allowing one to calculate the nonlinear ac stationary responses using powerful matrix methods. The second approach based on the accurate two-mode approximation [D.A. Garanin, Phys. Rev. E. 54, 3250 (1996)] effectively generalizes the existing results for dipolar systems in superimposed ac and dc fields to a mean field potential. The results apply both to nonlinear dielectric relaxation and dynamic Kerr effect of nematics and to magnetic birefringence relaxation of ferrofluids. Furthermore, the given methods of the solution of infinite hierarchies of multi-term recurrence relations are quite general and can be applied to analogous nonlinear response problems.

  1. Characterization of combined power plasma jet using AC high voltage and nanosecond pulse for reactive species composition control

    NASA Astrophysics Data System (ADS)

    Takashima, Keisuke; Konishi, Hideaki; Kato, Toshiaki; Kaneko, Toshiro

    2014-10-01

    In the application studies for both bio-medical and agricultural applications, the roles of the reactive oxide and/or nitride species generated in the plasma has been reported as a key to control the effects and ill-effects on the living organism. The correlation between total OH radical exposure from an air atmospheric pressure plasma jet and the sterilization threshold on Botrytis cinerea is presented. With the increase of the OH radical exposure to the Botrytis cinerea, the probability of sterilization is increased. In this study, to resolve the roles of reactive species including OH radicals, a combined power plasma jet using nanosecond pulses and low-frequency sinusoidal AC high voltage (a few kHz) is studied for controlling the composition of the reactive species. The nanosecond pulses are superimposed on the AC voltage which is in synchronization with the AC phase. The undergoing work to characterize the combined power discharge with electric charge and voltage cycle on the plasma jet will also be presented to discuss the discharge characteristics to control the composition of the reactive species.

  2. Ac loss modelling and measurement of superconducting transformers with coated-conductor Roebel-cable in low-voltage winding

    NASA Astrophysics Data System (ADS)

    Pardo, Enric; Staines, Mike; Jiang, Zhenan; Glasson, Neil

    2015-11-01

    Power transformers using a high temperature superconductor (HTS) ReBCO coated conductor and liquid nitrogen dielectric have many potential advantages over conventional transformers. The ac loss in the windings complicates the cryogenics and reduces the efficiency, and hence it needs to be predicted in its design, usually by numerical calculations. This article presents detailed modelling of superconducting transformers with Roebel cable in the low-voltage (LV) winding and a high-voltage (HV) winding with more than 1000 turns. First, we model a 1 MVA 11 kV/415 V 3-phase transformer. The Roebel cable solenoid forming the LV winding is also analyzed as a stand-alone coil. Agreement between calculations and experiments of the 1 MVA transformer supports the model validity for a larger tentative 40 MVA 110 kV/11 kV 3-phase transformer design. We found that the ac loss in each winding is much lower when it is inserted in the transformer than as a stand-alone coil. The ac loss in the 1 and 40 MVA transformers is dominated by the LV and HV windings, respectively. Finally, the ratio of total loss over rated power of the 40 MVA transformer is reduced below 40% of that of the 1 MVA transformer. In conclusion, the modelling tool in this work can reliably predict the ac loss in real power applications.

  3. Ion fluxes and electro-osmotic fluid flow in electrolytes around a metallic nanowire tip under large applied ac voltage.

    PubMed

    Poetschke, M; Bobeth, M; Cuniberti, G

    2013-09-10

    Motivated by the analysis of electrochemical growth of metallic nanowires from solution, we studied ion fluxes near nanoelectrodes in a binary symmetric electrolyte on the basis of the modified Poisson-Nernst-Planck equations in the strongly nonlinear region at large applied ac voltage. For an approximate calculation of the electric field near the nanowire tip, concentric spherical blocking electrodes were considered with radius of the inner electrode being of typically a few ten nanometers. The spatiotemporal evolution of the ion concentrations within this spherical model was calculated numerically by using the finite element method. The potential drop at the electric double layer, the electric field enhancement at the electrode surface, and the field screening in the bulk solution were determined for different bulk concentrations, ac voltages, and frequencies. The appearance of ac electro-osmotic fluid flow at the tip of a growing metallic nanowire is discussed, based on an estimation of the body force in the liquid near the nanowire tip, which was modeled by a cylinder with hemispherical cap. Electric field components tangential to the electrode surface exist near the contact between cylinder and hemisphere. Our analysis suggests that ac electro-osmotic flow causes an additional convective transport of metal complexes to the tip of the growing metal nanowire and thus affects the nanowire growth velocity. PMID:23927385

  4. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    SciTech Connect

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  5. Spectral response measurement of double-junction thin-film photovoltaic devices: the impact of shunt resistance and bias voltage

    NASA Astrophysics Data System (ADS)

    Pravettoni, Mauro; Galleano, Roberto; Virtuani, Alessandro; Müllejans, Harald; Dunlop, Ewan D.

    2011-04-01

    Multijunction photovoltaic (PV) thin-film modules are becoming more and more important on the market, due to their low cost and improved module efficiency now well above 10%. The spectral response (SR) measurement of multijunction thin-film cells presents additional challenges with respect to the SR measurement procedure for single-junction devices. Several works have appeared in the last 15 years in the PV literature, describing certain measurement artefacts that typically appear when measuring the SR of multijunction cells without applying an appropriate voltage bias to the entire cell. In this paper, the authors revise the theoretical description of SR measurements on multijunction devices, show how to detect the possible origin of measurement artefacts from the dark SR and show why bias voltage sometimes is not enough to avoid such artefacts or why it is not even necessary. An experimental confirmation of the theoretical approach is finally given.

  6. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    SciTech Connect

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M.; Ashcroft, C. M.; Canalias, C.; Gruverman, A.

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  7. Influence of bias voltage on the switching behaviour of CoCrPt-SiO2 perpendicular recording media

    NASA Astrophysics Data System (ADS)

    Li, W. M.; Shi, J. Z.; Lim, W. K.; Ding, J.

    2013-05-01

    A systematic investigation of the influence of negative substrate bias on the microstructure and magnetic switching behaviour of CoCrPt : SiO2 perpendicular recording media is performed by varying the negative bias voltage from 0 to 600 V during the deposition of a bottom Ru (or Ru : TiO2SiO2) intermediate layer. The microscopic structures and the surface morphology are studied by a transmission electron microscope and an atomic force microscope. The crystallographic properties are studied by an x-ray diffractometer. Our observation shows that high biasing is at work to favour the formation of low-energy hexagonal close packed (0 0 2) planes, resulting in high crystallinity of Ru. Addition of oxide to the Ru intermediate layer leads to an increase in grain segregation, which results in a small grain diameter, but broad standard deviation and large surface roughness. Utilization of a bias voltage on the Ru oxide intermediate layer successfully improves the crystal texture of CoCrPt : SiO2 and induces high Hc, a narrow intrinsic switching field distribution and low Hcr45/Hcr0, while maintaining isolated grains and small grain size.

  8. System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

    NASA Astrophysics Data System (ADS)

    Lipo, Thomas A.; Alan, Irfan

    1991-06-01

    Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the

  9. System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

    NASA Technical Reports Server (NTRS)

    Lipo, Thomas A.; Alan, Irfan

    1991-01-01

    Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the

  10. Voltage-Sensor Transitions of the Inward-Rectifying K+ Channel KAT1 Indicate a Latching Mechanism Biased by Hydration within the Voltage Sensor1[W][OPEN

    PubMed Central

    Lefoulon, Cécile; Karnik, Rucha; Honsbein, Annegret; Gutla, Paul Vijay; Grefen, Christopher; Riedelsberger, Janin; Poblete, Tomás; Dreyer, Ingo; Gonzalez, Wendy; Blatt, Michael R.

    2014-01-01

    The Kv-like (potassium voltage-dependent) K+ channels at the plasma membrane, including the inward-rectifying KAT1 K+ channel of Arabidopsis (Arabidopsis thaliana), are important targets for manipulating K+ homeostasis in plants. Gating modification, especially, has been identified as a promising means by which to engineer plants with improved characteristics in mineral and water use. Understanding plant K+ channel gating poses several challenges, despite many similarities to that of mammalian Kv and Shaker channel models. We have used site-directed mutagenesis to explore residues that are thought to form two electrostatic countercharge centers on either side of a conserved phenylalanine (Phe) residue within the S2 and S3 α-helices of the voltage sensor domain (VSD) of Kv channels. Consistent with molecular dynamic simulations of KAT1, we show that the voltage dependence of the channel gate is highly sensitive to manipulations affecting these residues. Mutations of the central Phe residue favored the closed KAT1 channel, whereas mutations affecting the countercharge centers favored the open channel. Modeling of the macroscopic current kinetics also highlighted a substantial difference between the two sets of mutations. We interpret these findings in the context of the effects on hydration of amino acid residues within the VSD and with an inherent bias of the VSD, when hydrated around a central Phe residue, to the closed state of the channel. PMID:25185120

  11. Voltage-sensor transitions of the inward-rectifying K+ channel KAT1 indicate a latching mechanism biased by hydration within the voltage sensor.

    PubMed

    Lefoulon, Cécile; Karnik, Rucha; Honsbein, Annegret; Gutla, Paul Vijay; Grefen, Christopher; Riedelsberger, Janin; Poblete, Tomás; Dreyer, Ingo; Gonzalez, Wendy; Blatt, Michael R

    2014-10-01

    The Kv-like (potassium voltage-dependent) K(+) channels at the plasma membrane, including the inward-rectifying KAT1 K(+) channel of Arabidopsis (Arabidopsis thaliana), are important targets for manipulating K(+) homeostasis in plants. Gating modification, especially, has been identified as a promising means by which to engineer plants with improved characteristics in mineral and water use. Understanding plant K(+) channel gating poses several challenges, despite many similarities to that of mammalian Kv and Shaker channel models. We have used site-directed mutagenesis to explore residues that are thought to form two electrostatic countercharge centers on either side of a conserved phenylalanine (Phe) residue within the S2 and S3 α-helices of the voltage sensor domain (VSD) of Kv channels. Consistent with molecular dynamic simulations of KAT1, we show that the voltage dependence of the channel gate is highly sensitive to manipulations affecting these residues. Mutations of the central Phe residue favored the closed KAT1 channel, whereas mutations affecting the countercharge centers favored the open channel. Modeling of the macroscopic current kinetics also highlighted a substantial difference between the two sets of mutations. We interpret these findings in the context of the effects on hydration of amino acid residues within the VSD and with an inherent bias of the VSD, when hydrated around a central Phe residue, to the closed state of the channel. PMID:25185120

  12. High-field actively detuneable transverse electromagnetic (TEM) coil with low-bias voltage for high-power RF transmission.

    PubMed

    Avdievich, Nikolai I; Bradshaw, Ken; Kuznetsov, Andrey M; Hetherington, Hoby P

    2007-06-01

    The design and construction of a 4T (170 MHz) transverse electromagnetic (TEM) actively detuneable quadrature head coil is described. Conventional schemes for active detuning require high negative bias voltages (>300 V) to prevent leakage of RF pulses with amplitudes of 1-2 kW. To extend the power handling capacity and avoid the use of high DC bias voltages, we developed an alternate method of detuning the volume coil. In this method the PIN diodes in the detuning circuits are shorted when the RF volume coil is tuned, and negatively biased with -12 V when the coil is detuned. To preserve the high Q(U)/Q(L) ratio of the TEM coil, we modified the method of Nabetani and Watkins (Proceedings of the 13th Annual Meeting of ISMRM, Kyoto, Japan, 2004, abstract 1574) by utilizing a high-impedance (approximately 200 Omega), lumped-element, quarter-wavelength transformer. A Q(U) of 500 was achieved for the detuneable TEM, such that incorporation of the detuning network had minimal effect (<1 dB) on the performance of the coil in vivo. PMID:17534919

  13. Voltage-Biased Superconducting Transition-Edge Bolometer with Strong Electrothermal Feedback Operated at 370 mK.

    PubMed

    Lee, S F; Gildemeister, J M; Holmes, W; Lee, A T; Richards, P L

    1998-06-01

    We present an experimental study of a composite voltage-biased superconducting bolometer (VSB). The tested VSB consists of a Ti-film superconducting thermometer (T(c) ~375 mK) on a Si substrate suspended by NbTi superconducting leads. A resistor attached to the substrate provides calibrated heat input into the bolometer. The current through the bolometer is measured with a superconducting quantum interference device ammeter. Strong negative electrothermal feedback fixes the bolometer temperature at T(c) and reduces the measured response time from 2.6 s to 13 ms. As predicted, the measured current responsivity of the bolometer is equal to the inverse of the bias voltage. A noise equivalent power of 5 x 10(-17) W/ radicalHz was measured for a thermal conductance G ~ 4.7 x 10(-10) W/K, which is consistent with the expected thermal noise. Excess noise was observed for bias conditions for which the electrothermal feedback strength was close to maximum. PMID:18273298

  14. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  15. Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

    SciTech Connect

    Fabretti, Savio; Zierold, Robert; Nielsch, Kornelius; Voigt, Carmen; Ronning, Carsten; Peretzki, Patrick; Seibt, Michael; Thomas, Andy

    2014-09-29

    Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

  16. Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

    SciTech Connect

    Hao, Yu; Rouxinol, Francisco; LaHaye, M. D.

    2014-12-01

    We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10{sup 5} can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED.

  17. Influence of bias voltage and temperature on charge transfer states in organic photovoltaic and electroluminescent integrated device

    SciTech Connect

    Huang, Jiang; Wang, Hanyu; Qi, Yige; Yu, Junsheng

    2014-05-19

    Based on the organic photovoltaic (PV) and electroluminescent (EL) integrated device with a structure of SubPc/C{sub 60} heterojunction, both PV and EL properties of charge transfer states (CTSs) were simultaneously investigated. By means of infrared and visible isolating method, the EL characteristics of CTSs and singlet-triplet excitons were separated, and their properties dependence on bias voltage and temperature was analyzed by introducing modified diode models. From the simulation on the emissive photons from CTSs, the temperature independent parameters of CTSs were extracted, which have close relationship with thermal activation energy and effective emissive state number of CTSs at the SubPc/C{sub 60} interface.

  18. Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

    SciTech Connect

    Chida, K.; Yamauchi, Y.; Arakawa, T.; Kobayashi, K.; Ono, T.; Hashisaka, M.; Nakamura, S.; Machida, T.

    2013-12-04

    We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

  19. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy.

    PubMed

    Li, Qian; Jesse, Stephen; Tselev, Alexander; Collins, Liam; Yu, Pu; Kravchenko, Ivan; Kalinin, Sergei V; Balke, Nina

    2015-02-24

    Nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical and electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. With many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies. PMID:25559112

  20. Tunable photonic cavity coupled to a voltage-biased double quantum dot system: Diagrammatic nonequilibrium Green's function approach

    NASA Astrophysics Data System (ADS)

    Agarwalla, Bijay Kumar; Kulkarni, Manas; Mukamel, Shaul; Segal, Dvira

    2016-07-01

    We investigate gain in microwave photonic cavities coupled to voltage-biased double quantum dot systems with an arbitrarily strong dot-lead coupling and with a Holstein-like light-matter interaction, by employing the diagrammatic Keldysh nonequilibrium Green's function approach. We compute out-of-equilibrium properties of the cavity: its transmission, phase response, mean photon number, power spectrum, and spectral function. We show that by the careful engineering of these hybrid light-matter systems, one can achieve a significant amplification of the optical signal with the voltage-biased electronic system serving as a gain medium. We also study the steady-state current across the device, identifying elastic and inelastic tunneling processes which involve the cavity mode. Our results show how recent advances in quantum electronics can be exploited to build hybrid light-matter systems that behave as microwave amplifiers and photon source devices. The diagrammatic Keldysh approach is primarily discussed for a cavity-coupled double quantum dot architecture, but it is generalizable to other hybrid light-matter systems.

  1. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy

    SciTech Connect

    Li, Qian; Jesse, Stephen; Tselev, Alexander; Collins, Liam; Yu, Pu; Kravchenko, Ivan; Kalinin, Sergei V.; Balke, Nina

    2015-01-05

    In this paper, nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical and electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. Finally, with many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies.

  2. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy

    DOE PAGESBeta

    Li, Qian; Jesse, Stephen; Tselev, Alexander; Collins, Liam; Yu, Pu; Kravchenko, Ivan; Kalinin, Sergei V.; Balke, Nina

    2015-01-05

    In this paper, nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical andmore » electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. Finally, with many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies.« less

  3. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature.

    PubMed

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-01

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons. PMID:22469613

  4. Effect of bias voltage on the microstructure and hardness of Ti-Si-N films deposited by using high-power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ding, JiCheng; Zou, ChangWei; Wang, QiMin; Zeng, Kun; Feng, SiCheng

    2016-01-01

    The huge potential of High-power impulse magnetron sputtering (HIPIMS) to improve the properties of deposited coatings has been verified. In this study, Ti-Si-N coatings were deposited on Si (111), glass and cemented carbide substrates by using HIPIMS. The influences of the peak voltage, duty cycle and total gas pressure on the transient peak current of the Ti90Si10 target was investigated in detailed. The (200) diffraction intensity decreased with increasing bias voltage from -50 V to -400 V. The hardness of the Ti-Si-N coatings deposited at various bias voltages and the internal stress at different bias voltages were studied. The results indicate that HIPIMS technology can considerably improve the mechanical capacity of the Ti-Si-N coatings, possibly due to the combined protection of the increased adhesive force with the substrate and the relatively high hardness, which are caused by densification and dislocation strengthening effects.

  5. Characteristics of corona impulses from insulated wires subjected to high ac voltages

    NASA Technical Reports Server (NTRS)

    Doreswamy, C. V.; Crowell, C. S.

    1976-01-01

    Corona discharges arise due to ionization of air or gas subject to high electric fields. The free electrons and ions contained in these discharges interact with molecules of insulating materials, resulting in chemical changes and destroying the electrical insulating properties. The paper describes some results of measurements aimed at determining corona pulse waveforms, their repetition rate, and amplitude distribution during various randomly-sampled identical time periods of a 60-Hz high-voltage wave. Described are properties of positive and negative corona impulses generated from typical conductors at various test high voltages. A possible method for calculating the energies, densities, and electromagnetic interferences by making use of these results is suggested.

  6. A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.

    PubMed

    Jiang, J; Ma, G M; Luo, D P; Li, C R; Li, Q M; Wang, W

    2014-02-01

    Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system. PMID:24593382

  7. A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system

    NASA Astrophysics Data System (ADS)

    Jiang, J.; Ma, G. M.; Luo, D. P.; Li, C. R.; Li, Q. M.; Wang, W.

    2014-02-01

    Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

  8. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    SciTech Connect

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  9. Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission.

    PubMed

    Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

    2015-04-01

    We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications. PMID:25933880

  10. Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission

    NASA Astrophysics Data System (ADS)

    Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

    2015-04-01

    We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications.

  11. Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Kannan, R.; Loganathan, S.

    2014-05-01

    Present work involves the preparation of Zirconium Nitride thin films on stainless steel (SS) (304L grade) substrate by reactive cylindrical magnetron sputtering method. The X-ray diffraction (XRD) profile of the ZrN thin films prepared with different bias voltage conforms face centered cubic structure with preferred orientation along the (111) plane at lower bias voltage (100 V) and at higher bias voltage (300 V) the preferred orientation shifted to (220) plane. The influences of bias voltage on the thickness and microhardness ZrN thin films have been studied. ZrN thin film sputtered with 300 V bias voltage shows the maximum reflectance of 90% at a wavelength of 1000 nm. The coated substrates have been found to exhibit improved corrosion resistance compared to the SS plate. The root mean square surface roughness and surface morphology were investigated from 3D atomic force microscope (AFM) images and scanning electron microscope (SEM), which indicate smooth and uniform surface pattern without any pin holes.

  12. Bias voltage dependence of two-step photocurrent in GaAs/AlGaAs quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Noda, T.; Elborg, M.; Mano, T.; Kawazu, T.; Han, L.; Sakaki, H.

    2016-02-01

    We investigated photoresponses of AlGaAs solar cells in which coupled GaAs quantum wells were embedded in the i-region of p-i-n diodes; we studied how the bias voltage Vb affects the normal photocurrent I generated by the visible light and a "two-step" photocurrent ΔI generated by the absorption of visible and infrared photons. We found that as Vb exceeds -0.2 V, ΔI rises and peaks at 0.6 V, while the normal photocurrent I falls to about half of its saturated level. These findings are discussed in terms of a rate equation model to show that ΔI is mainly determined by the balance of escape and recombination of photogenerated carriers.

  13. Characteristics of plasma sterilizer using microwave torch plasma with AC high-voltage discharge plasma

    NASA Astrophysics Data System (ADS)

    Itarashiki, Tomomasa; Hayashi, Nobuya; Yonesu, Akira

    2016-01-01

    Microwave plasma sterilization has recently been attracting attention for medical applications. However, it is difficult to perform low-temperature sterilization in short time periods. Increasing the output power shortens the time required for sterilization but causes the temperature to increase. To overcome this issue, we have developed a hybrid plasma system that combines a microwave torch plasma and a high-voltage mesh plasma, which allows radicals to be produced at low temperatures. Using this system, successful sterilization was shown to be possible in a period of 45 min at a temperature of 41 °C.

  14. Final report on COOMET.EM-S5: Supplementary comparison of AC voltage ratio standards (COOMET project 396/UA/07)

    NASA Astrophysics Data System (ADS)

    Kikalo, V. N.; Petrovich, M. L.; Lobzhanidze, N. G.; Kisilev, V. V.; Styblikova, R.

    2013-01-01

    The comparison COOMET No 396/UA/07 of AC voltage ratio standards is registered in the BIPM key comparison database (KCDB) as supplementary comparison COOMET.EM-S5. It was conducted from June 2008 to July 2010 and involved the National Metrology Institutes of the Republic of Belarus, Georgia, the Russian Federation, the Czech Republic and Ukraine. SE "Ukrmetrteststandard" (Ukraine) was the Pilot laboratory for this exercise. The final report lists all data of measurement results and declared uncertainties as obtained by the participating NMIs. The degrees to which the values of the national standards correspond to the reference values of the supplementary comparison are quantitatively evaluated with the conclusions that the results obtained are recognized to be consistent taking into account the declared uncertainties. This gives evidence for supporting the corresponding Calibration and Measurement Capabilities for those values of voltage ratio at which NMIs have performed measurements. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by COOMET, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  15. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    NASA Astrophysics Data System (ADS)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  16. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  17. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  18. Abnormal behavior of threshold voltage shift in bias-stressed a-Si:H thin film transistor under extremely high intensity illumination.

    PubMed

    Han, Sang Youn; Park, Kyung Tea; Kim, Cheolkyu; Jeon, Sanghyun; Yang, Sung-Hoon; Kong, Hyang-Shik

    2015-07-22

    We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination. PMID:26132513

  19. Domain Motion of Ferroelectricity of Bi2SrTa2O9 Single Crystals under an AC-Voltage Electric Field

    NASA Astrophysics Data System (ADS)

    Machida, Akio; Nagasawa, Naomi; Ami, Takaaki; Suzuki, Masayuki

    1999-02-01

    A novel phenomenon, which increases the remanent polarization of Bi2SrTa2O9 single crystals, a promising candidate for ferroelectric random access memories (FeRAM), has been identified. The single crystals, grown in vapor phases using the self-flux method, have a composition characterized asBixSryTa2O9 (x=2.08±0.09, y=1.04±0.06). Incontrast to BixSryTa2O9 (x=1.91±0.05, y=1.27±0.08) single crystals grown by the self-flux method, the coercive field of the present single crystals is smaller. Observing optical anisotropy in the c-plane, we found that this material has a paraelectric phase, which might originate from the partial distortion of the crystal. After voltage was applied, the paraelectric phase disappeared and the crystal became a ferroelectric domain structure. Measuring the electrical properties in the c-plane, the remanent polarization of the Bi2SrTa2O9 single crystal was increased by applying ac-voltage. One-hour annealing over the Curie temperature also produced a paraelectric phase in the crystal but it was confirmed that this paraelectric phase can also be decreased by applying ac-voltage. Using this ac-voltage application, we can clearly observe the domain structure of BiSTa single crystal for the first time.

  20. Electron Transport in Graphene Nanoribbon Field-Effect Transistor under Bias and Gate Voltages: Isochemical Potential Approach.

    PubMed

    Yun, Jeonghun; Lee, Geunsik; Kim, Kwang S

    2016-07-01

    Zigzag graphene nanoribbon (zGNR) of narrow width has a moderate energy gap in its antiferromagnetic ground state. So far, first-principles electron transport calculations have been performed using nonequilibrium Green function (NEGF) method combined with density functional theory (DFT). However, the commonly practiced bottom-gate control has not been studied computationally due to the need to simulate an electron reservoir that fixes the chemical potential of electrons in the zGNR and electrodes. Here, we present the isochemical potential scheme to describe the top/back-gate effect using external potential. Then, we examine the change in electronic state under the modulation of chemical potential and the subsequent electron transport phenomena in zGNR transistor under substantial top-/back-gate and bias voltages. The gate potential can activate the device states resulting in a boosted current. This gate-controlled current-boosting could be utilized for designing novel zGNR field effect transistors (FETs). PMID:27299184

  1. AC Bias Characterization of Low Noise Bolometers for SAFARI Using an Open-Loop Frequency Domain SQUID-based Multiplexer Operating Between 1 and 5 MHz

    NASA Astrophysics Data System (ADS)

    Gottardi, L.; Bruijn, M.; Gao, J.-R.; Hartog, R.; Hijmering, R.; Hoevers, H.; Khosropanah, P.; Korte, P.; Kuur, J.; Lindeman, M.; Ridder, M.

    2012-05-01

    SRON is developing the Frequency Domain Multiplexing (FDM) readout and the ultra low NEP TES bolometers array for the infrared spectrometer SAFARI on board of the Japanese space mission SPICA. The FDM prototype of the instrument requires critical and complex optimizations. For single pixel characterization under AC bias we are developing a simple FDM system working in the frequency range from 1 to 5 MHz, based on the open loop read-out of a linearized two-stage SQUID amplifier and high Q lithographic LC resonators. We describe the details of the experimental set-up required to achieve low power loading (< 1 fW) and low noise (NEP $\\sim 10^{-19} W/Hz^{1/2}$) in the TES bolometers. We conclude the paper by comparing the performance of a $4 \\cdot 10^{-19} W/Hz^{1/2}$ TES bolometer measured under DC and AC bias.

  2. The Dependence of Nucleation Density on the Bias Voltage in the Growth of High Quality Thick Heteroepitaxial Diamond Films on Ir/YSZ/Si(100) Substrates Using Microwave Plasma Chemical Vapor Deposition

    SciTech Connect

    Regmi, Murari; More, Karren Leslie; Eres, Gyula

    2012-01-01

    We report nucleation densities on Ir(100) surfaces that exceed 1011 cm-2 and remain roughly unchanged in a narrow bias voltage range of 50 V starting at 125 V. At lower and higher bias voltages outside of this window the nucleation density drops to values near zero within a 25 V step and remains independent of the bias voltage. We attribute this extreme sensitivity to a delicate nanostructured active Ir phase that is both formed and destroyed by ion bombardment with specific energies. The role of this phase is to mediate the formation of chemically specific carbon that is the precursor for diamond crystallite formation in the subsequent bias free growth stage.

  3. Impedance spectra of Fe-doped SrTiO3 thin films upon bias voltage: inductive loops as a trace of ion motion.

    PubMed

    Taibl, S; Fafilek, G; Fleig, J

    2016-08-01

    Mass and charge transport properties of slightly Fe-doped SrTiO3 (Fe:STO) thin films on a conducting substrate were investigated by means of impedance spectroscopy under different bias voltages and I-V measurements with varying scan rates. At measurement temperatures between 325 °C and 700 °C the applied bias voltage caused an unusual "inductive loop" in the low frequency range of impedance spectra. DC measurements showed that current-voltage curves strongly depend on the scan rate, indicating that different states of the sample became accessible to probe. Both findings can be understood in terms of bias induced ion motion, i.e. by stoichiometry polarization within the Fe:STO thin films upon voltage. Hence, the appearance of an "inductive loop" in the impedance spectra is considered a very general feature that might exist for many materials, particularly in oxide thin films. It may indicate ion motion and stoichiometry variations taking place in the corresponding frequency range. PMID:27088884

  4. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    SciTech Connect

    Obaidulla, SK. Md. Goswami, D. K. E-mail: dipak@phy.iitkgp.ernet.in; Giri, P. K.

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  5. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal–semiconductor–metal structure by varying the bias voltage

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1‑x O/ZnO metal–semiconductor–metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1‑x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1‑x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1‑x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1‑x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345–400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1–2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1‑x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1‑x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1‑x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1‑x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345–400 nm), the MSM-PDs demonstrate a short-wavelength band (320–345 nm) at a 3 V bias voltage.

  6. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage.

    PubMed

    Hwang, J D; Lin, G S

    2016-09-16

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage. PMID:27501372

  7. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Barquinha, P. M. C.; Martins, R. F. P.; Cobb, B.; Powell, M. J.; Flewitt, A. J.

    2016-02-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  8. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  9. Effects of applying bias voltage on metal-coated pentacene films on SiO2 studied by hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Hirosawa, Ichiro; Watanabe, Takeshi; Oji, Hiroshi; Yasuno, Satoshi; Koganezawa, Tomoyuki; Tada, Keisuke; Yoshimoto, Noriyuki

    2016-03-01

    The effects of bias voltage application on C 1s photoelectron kinetic energies in Au- and Ag-coated pentacene films on SiO2 were studied by hard X-ray photoelectron spectroscopy. It was observed that the kinetic energies of C 1s were smaller in shallow regions in contact with metals than in mid regions of the pentacene films. The differences in C 1s kinetic energy between the shallow and mid regions of the Ag-coated pentacene films were slightly larger than those of the Au-coated films. The differences in the kinetic energies were decreased by applying negative voltages. The larger effect of voltage application was observed in the Ag-coated film than in the Au-coated film. In addition, partially reduced Si atoms in SiO2 were found at the interface to the pentacene film.

  10. Controllable high voltage source having fast settling time

    NASA Technical Reports Server (NTRS)

    Doong, H.; Acuna, M. H. (Inventor)

    1975-01-01

    A high voltage dc stepping power supply for sampling a utilization device such as an electrostatic analyzer has a relatively fast settling time for voltage steps. The supply includes a waveform generator for deriving a low voltage staircase waveform that feeds a relatively long response time power supply, deriving a high output voltage generally equal to a predetermined multiple of the input voltage. In the power supply, an ac voltage modulated by the staircase waveform is applied to a step-up transformer and then to a voltage multiplier stack to form a high voltage, relatively poor replica of the input waveform at an intermediate output terminal. A constant dc source, applied to the input of the power supply, biases the voltage at the intermediate output terminal to be in excess of the predetermined multiple of the input voltage.

  11. Gate-tunable zero-frequency current cross correlations of the quartet state in a voltage-biased three-terminal Josephson junction

    NASA Astrophysics Data System (ADS)

    Mélin, Régis; Sotto, Moïse; Feinberg, Denis; Caputo, Jean-Guy; Douçot, Benoît

    2016-03-01

    A three-terminal Josephson junction biased at opposite voltages can sustain a phase-sensitive dc current carrying three-body static phase coherence, known as the "quartet current." We calculate the zero-frequency current noise cross correlations and answer the question of whether this current is noisy (like a normal current in response to a voltage drop) or noiseless (like an equilibrium supercurrent in response to a phase drop). A quantum dot with a level at energy ɛ0 is connected to three superconductors Sa,Sb, and Sc with gap Δ , biased at Va=V ,Vb=-V , and Vc=0 , and with intermediate contact transparencies. At zero temperature, nonlocal quartets (in the sense of four-fermion correlations) are noiseless at subgap voltage in the nonresonant dot regime ɛ0/Δ ≫1 , which is demonstrated with a semianalytical perturbative expansion of the cross correlations. Noise reveals the absence of granularity of the superflow splitting from Sc towards (Sa,Sb) in the nonresonant dot regime, in spite of finite voltage. In the resonant dot regime ɛ0/Δ ≲1 , cross correlations measured in the (Va,Vb) plane should reveal an "anomaly" in the vicinity of the quartet line Va+Vb=0 , related to an additional contribution to the noise, manifesting the phase sensitivity of cross correlations under the appearance of a three-body phase variable. Phase-dependent effective Fano factors Fφ are introduced, defined as the ratio between the amplitudes of phase modulations of the noise and the currents. At low bias, the Fano factors Fφ are of order unity in the resonant dot regime ɛ0/Δ ≲1 , and they are vanishingly small in the nonresonant dot regime ɛ0/Δ ≫1 .

  12. A novel single-stage isolated ac/dc converter with quasi-resonant zero-voltage-switching with a modified forward converter adopting capacitive output filter

    NASA Astrophysics Data System (ADS)

    Kim, Myung-Bok; Youn, Myung-Joong

    2010-07-01

    A new single-stage isolated ac-dc converter, which can achieve a better efficiency and a better power factor, is proposed. It is based on a general forward topology so that it can utilise the transformer more than converters based on flyback topology. In addition, since the capacitive output filter is adopted instead of an inductive type filter, the voltages on the secondary rectifiers can be clamped to the output voltage; meanwhile, the capacitor used in the output filter can be utilised for the resonance with the leakage inductance, and the turn-off loss in the primary main switch and the dissipative loss in the snubber can be reduced. Moreover, since this converter can be operated at the boundary conduction mode, the line input current can be automatically shaped as the waveform of a line voltage and quasi-resonant zero voltage switching can be also obtained. Therefore, it features higher efficiency, lower voltage stress and a smaller-sized transformer than other topologies. A 100 W prototype has been built and tested for the verification of the proposed topology.

  13. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    SciTech Connect

    Flewitt, A. J.; Powell, M. J.

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  14. Phonon-Induced Electron-Hole Excitation and ac Conductance in Molecular Junction

    NASA Astrophysics Data System (ADS)

    Ueda, Akiko; Utsumi, Yasuhiro; Imamura, Hiroshi; Tokura, Yasuhiro

    2016-04-01

    We investigate the linear ac conductance of molecular junctions under a fixed dc bias voltage in the presence of an interaction between a transporting electron and a single local phonon in a molecule with energy ω0. The electron-phonon interaction is treated by the perturbation expansion. The ac conductance as a function of the ac frequency ωac decreases or increases compared with the noninteracting case depending on the magnitude of the dc bias voltage. Furthermore, a dip emerges at ωac ˜ 2ω0. The dip originates from the modification of electron-hole excitation by the ac field, which cannot be obtained by treating the phonon in the linear regime of a classical forced oscillation.

  15. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    NASA Astrophysics Data System (ADS)

    Jun-Ting, Yu; Shu-Ming, Chen; Jian-Jun, Chen; Peng-Cheng, Huang; Rui-Qiang, Song

    2016-04-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030).

  16. A battery-based, low-noise voltage source

    NASA Astrophysics Data System (ADS)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  17. A battery-based, low-noise voltage source.

    PubMed

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of +/-15 and +/-5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7 x 10(-7) over 6.5 h and a noise level equal or smaller than 30 nV/square root(Hz) is achieved. PMID:20590260

  18. Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizubayashi, W.; Fukuda, K.; Mori, T.; Endo, K.; Liu, Y. X.; Matsukawa, T.; O'uchi, S.; Ishikawa, Y.; Migita, S.; Morita, Y.; Tanabe, A.; Tsukada, J.; Yamauchi, H.; Masahara, M.; Ota, H.

    2015-09-01

    We investigated the impact of fin length (Tfin) on the threshold voltage (Vth) modulation by back bias (Vb) for independent double-gate (IDG) tunnel fin field-effect transistors (tFinFETs). It was found that Vth can be tuned by Vb for IDG tFinFETs regardless of Tfin, which can be explained by the back-gate-effect model of IDG FinFETs. For IDG tFinFETs, the slope (back-gate-effect factor (γ)) of Vth with respect to Vb increases with thinning Tfin. This means that Tfin thinning is effective for tuning Vth by Vb for IDG tFinFETs. Furthermore, it was demonstrated that this back-bias-effect is consistent with the results of device simulation using an advanced nonlocal band-to-band model.

  19. Switching of actin-myosin motors by voltage-induced pH bias in vitro.

    PubMed

    Hatori, Kuniyuki; Iwase, Takahiro; Wada, Reito

    2016-08-01

    ATP-driven motor proteins, which function in cell motility and organelle transport, have potential applications as bio-inspired micro-devices; however, their control remains unsatisfactory. Here, we show rapid-velocity control of actin filaments interacting with myosin motors using voltage applied to Pt electrodes in an in vitro motility system, by which immediate increases and decreases in velocity were induced beside the cathode and anode, respectively. Indicator dye revealed pH changes after voltage application, and alternate voltage switching allowed actin filaments to cyclically alter their velocity in response to these changes. This principle provides a basis for on-demand control of not only motor proteins but also pH-sensitive events at a microscopic level. PMID:27210738

  20. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps. PMID:26726370

  1. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

    SciTech Connect

    Pasaja, Nitisak; Sansongsiri, Sakon; Anders, Andre; Vilaithong,Thiraphat; Intasiri, Sawate

    2006-09-10

    Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc (FCVA) plasma sources operated in sequential pulsed mode. A negatively pulsed bias was applied to the substrate only when carbon plasma was generated. Films thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrate for the of the measurement sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of sp2 content and an increase of the sp2 cluster size.

  2. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

    SciTech Connect

    Pasaja, Nitisak; Sansongsiri, Sakon; Intasiri, Sawate; Vilaithong, Thiraphat; Anders, Andre

    2007-01-24

    Metal-containing tetrahedral amorphous carbon films wereproduced by dual filtered cathodic vacuum arc plasma sources operatedinsequentially pulsed mode. Negatively pulsed bias was applied to thesubstrate when carbon plasma was generated, whereas it was absentwhen themolybdenum plasma was presented. Film thickness was measured afterdeposition by profilometry. Glass slides with silver padswere used assubstrates for the measurement of the sheet resistance. Themicrostructure and composition of the films were characterizedbyRamanspectroscopy and Rutherford backscattering, respectively. It was foundthat the electrical resistivity decreases with an increaseof the Mocontent, which can be ascribed to an increase of the sp2 content and anincrease of the sp2 cluster size.

  3. Critical current density and ac harmonic voltage generation in YBaCuO thin films by the screening technique

    NASA Astrophysics Data System (ADS)

    Pérez-López, Israel O.; Gamboa, Fidel; Sosa, Víctor

    2010-12-01

    The temperature and field dependence of harmonics in voltage Vn=Vn‧-iVn″ using the screening technique have been measured for YBaCuO superconducting thin films. Using the Sun model we obtained the curves for the temperature-dependent critical current density Jc(T). In addition, we applied the criterion proposed by Acosta et al. to compute Jc(T). Also, we made used of the empirical law Jc∝(1-T/Tc)n as an input in our calculations to reproduce experimental harmonic generation up to the fifth harmonic. We found that most models fit well the fundamental voltage but higher harmonics are poorly reproduced. Such behavior suggests the idea that higher harmonics contain information concerning complex processes like flux creep or thermally assisted flux flow.

  4. Fast switching, modular high-voltage DC/AC-power supplies for RF-Amplifiers and other applications

    SciTech Connect

    Alex, J.; Schminke, W.

    1995-12-31

    A new kind of high voltage high-power Pulse-Step Modulator (PSM) for broadcast transmitters, accelerator sources, for NBI (Neutral Beam Injection for Plasma Heating), gyrotrons and klystrons has been developed. Since its first introduction in 1984 for broadcast transmitters, more than 100 high-power sound broadcast transmitters had been equipped with the first generation of the PSM modulators, using Gate Turn-Off Thyristors (GTOs) as switching elements. Recently, due to faster switching elements and making use of the latest DSP technologies (Digital Signal Processing), the performance data and areas of application could be extended further. In 1994, a precision high voltage source for MW gyrotrons was installed at CRPP in Lausanne. Supplementary very low cost solutions for lower powers but high voltages had been developed. Hence, today, a large area of applications can be satisfied with the family of solutions. The paper describes the principle of operation, the related control systems and refers to some particular applications of the PSM amplifiers, especially the newest developments and corresponding field results.

  5. Effect of bias voltage polarity of a substrate on the texture, microstructure, and magnetic properties of Ni films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dzhumaliev, A. S.; Nikulin, Yu. V.; Filimonov, Yu. A.

    2016-06-01

    The influence of the bias voltage polarity U s on microstructure, crystallographic texture and magnetic properties has been investigated for Ni films with a thickness of ≈15-420 nm, which are obtained via magnetron sputtering at a working gas pressure P corresponding to the collision-deficient flight mode of atoms of the sputtered target between the target and the substrate. The Ni(111)-textured films have been shown to form at U s ≈-100 V, whose microstructure and magnetic parameters are almost unchanged with a thickness. In contrast, the Ni(200) films are formed at U s ≈ +100 V, whose magnetic properties and micro-structure depend significantly on the thickness d that manifests in a critical thickness d* ≈ 150 nm, when the structure of the film becomes inhomogeneous in the thickness, the remagnetization loops are changed from rectangular to supercritical with the formation of the band domain structure.

  6. Negative hydrogen ion beam extraction from an AC heated cathode driven Bernas-type ion source

    NASA Astrophysics Data System (ADS)

    Okano, Y.; Miyamoto, N.; Kasuya, T.; Wada, M.

    2015-04-01

    A plasma grid structure was installed to a Bernas-type ion source used for ion implantation equipment. A negative hydrogen (H-) ion beam was extracted by an AC driven ion source by adjusting the bias to the plasma grid. The extracted electron current was reduced by positively biasing the plasma grid, while an optimum plasma grid bias voltage for negative ion beam extraction was found to be positive 3 V with respect to the arc chamber. Source operations with AC cathode heating show extraction characteristics almost identical to that with DC cathode heating, except a minute increase in H- current at higher frequency of cathode heating current.

  7. Asymmetric synthesis of crambescin A-C carboxylic acids and their inhibitory activity on voltage-gated sodium channels.

    PubMed

    Nakazaki, Atsuo; Nakane, Yoshiki; Ishikawa, Yuki; Yotsu-Yamashita, Mari; Nishikawa, Toshio

    2016-06-21

    Synthesis of both enantiomers of crambescin B carboxylic acid is described. A cis-enyne starting material was epoxidized under the conditions of Katsuki asymmetric epoxidation to give 95% ee of the epoxide, which was transformed to crambescin B carboxylic acid via bromocation-triggered cascade cyclization as the key step. Enantiomerically pure crambescin A and C carboxylic acids were also synthesized from the product of the cascade reaction. Structure-activity relationship (SAR) studies against voltage-gated sodium channel (VGSC) inhibition using those synthetic compounds revealed that the natural enantiomer of crambescin B carboxylic acid was most active and comparable to tetrodotoxin, and the unalkylated cyclic guanidinium structure is indispensible, while the carboxylate moiety is not important. The absolute stereochemistry of crambescin A was determined by a comparison of the methyl ester derived from natural crambescin A with that derived from the stereochemically defined crambescin A carboxylic acid synthesized in this study. PMID:27215973

  8. Operational stability in pentacene thin-film transistors with threshold voltages tuned by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Kimura, Yoshinari; Kitamura, Masatoshi; Kitani, Asahi; Arakawa, Yasuhiko

    2016-02-01

    Pentacene-based organic thin-film transistors (TFTs) having a SiO2 gate dielectric treated with oxygen plasma have been investigated for control of the threshold voltage. The threshold voltage changed in the wide range from -15 to 80 V, depending on plasma treatment time, AC power for plasma generation, and gate dielectric thickness. The threshold voltage change was attributed to negative charges induced on and/or near the surface of the gate dielectric. The threshold voltage change on the order of 1 V was particularly proportional to plasma treatment time. The predictable change enables the control of threshold voltage in this range. In addition, the effect of gate bias stress on threshold voltage was examined. The results suggested that gate bias stress does not negate the threshold voltage change induced by plasma treatment.

  9. A scanning tunneling microscope break junction method with continuous bias modulation.

    PubMed

    Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

    2015-09-28

    Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule. PMID:26308622

  10. Improved AC pixel electrode circuit for active matrix of organic light-emitting display

    NASA Astrophysics Data System (ADS)

    Si, Yujuan; Lang, Liuqi; Chen, Wanzhong; Liu, Shiyong

    2004-05-01

    In this paper, a modified four-transistor pixel circuit for active-matrix organic light-emitting displays (AMOLED) was developed to improve the performance of OLED device. This modified pixel circuit can provide an AC driving mode to make the OLED working in a reversed-biased voltage during the certain cycle. The optimized values of the reversed-biased voltage and the characteristics of the pixel circuit were investigated using AIM-SPICE. The simulated results reveal that this circuit can provide a suitable output current and voltage characteristic, and little change was made in luminance current.

  11. Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma

    SciTech Connect

    Koda, Tatsunori; Toyota, Hiroshi

    2014-03-15

    The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B{sub C} and substrate DC bias voltage V{sub S} on the Ni film structures were investigated. For V{sub S} = −40 V, the average surface grain size D{sub G} measured by atomic force microscopy for B{sub C} = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D{sub G} increased with V{sub S}. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V{sub S}. For V{sub S} = −40 V and B{sub C} = 3 mT, a film resistivity ρ of 8.96 × 10{sup −6} Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10{sup −6} Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B{sub C} and V{sub S}.

  12. Thermionic triode generates ac power

    NASA Technical Reports Server (NTRS)

    Kniazzeh, A. G. F.; Scharz, F. C.

    1970-01-01

    Electrostatic grid controls conduction cycle of thermionic diode to convert low dc output voltages to high ac power without undesirable power loss. An ac voltage applied to the grid of this new thermionic triode enables it to convert heat directly into high voltage electrical power.

  13. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

    SciTech Connect

    Sogabe, Tomah Ogura, Akio; Okada, Yoshitaka

    2014-02-21

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

  14. KEY COMPARISONS: Final report: SIM regional comparison of ac-dc voltage transfer difference (SIM.EM.K6a, SIM.EM-K9 and SIM.EM-K11)

    NASA Astrophysics Data System (ADS)

    Campos, Sara; Filipski, Piotr; Izquierdo, Daniel; Afonso, Edson; Landim, Régis P.; Di Lillo, Lucas; Lipe, Thomas

    2009-01-01

    Three comparisons of ac-dc voltage transfer difference held from January to December 2004 are reported. Six NMIs in the SIM region took part: NRC (Canada), NIST (United States of America), CENAM (Mexico), INTI (Argentina), UTE (Uruguay) and INMETRO (Brazil). The comparisons were proposed to assess the measurement capabilities in ac-dc voltage transfer difference of the NMIs in the SIM region. The test points were selected to link the results with the equivalent CCEM Key Comparisons, through three NMIs participating in both SIM and CCEM key comparisons. Additionally, a SIM.EM-Supplementary comparison was proposed, in support of the SIM NMIs' power/energy meter calibration capabilities. One technical protocol and one travelling standard were used, to economize on time and resources. The report shows the degree of equivalence in the SIM region and also the degree of equivalence with the corresponding CCEM reference value. The results of all participants support the values and uncertainties of the applicable CMC entries for ac-dc voltage transfer difference in the Key Comparison Database held at the BIPM. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

  15. Biasing vector network analyzers using variable frequency and amplitude signals

    NASA Astrophysics Data System (ADS)

    Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

  16. Biasing vector network analyzers using variable frequency and amplitude signals.

    PubMed

    Nobles, J E; Zagorodnii, V; Hutchison, A; Celinski, Z

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal. PMID:27587141

  17. Note: high sensitivity self-bias magnetoelectric sensor with two different magnetostrictive materials.

    PubMed

    Chen, Lei; Li, Ping; Wen, Yumei; Zhu, Yong

    2013-06-01

    The self-bias magnetoelectric (ME) sensor is designed, fabricated, and characterized for detecting weak ac magnetic-field. The two different magnetostrictive materials produce the gradient of magnetization, resulting in an internal magnetic field and a strong ME response. At zero-biased dc magnetic field, a low-frequency ME voltage coefficient (dVME∕dHac) of 22.11 mV∕Oe is achieved, which is 17.69 times higher than that of the previous magnets∕0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) sensor. Furthermore, the ME voltage coefficient reaches 2.73 V∕Oe at resonance. The induced ME voltage shows an excellent linear relationship to ac magnetic field when field amplitude varies from ~10(-7) Oe to 1 Oe. PMID:23822388

  18. ACS after SM4: New Life for an Old Workhorse

    NASA Astrophysics Data System (ADS)

    Golimowski, David; Anderson, Jay; Armstrong, Amber; Arslanian, Steve; Bedin, Luigi; Bohlin, Ralph; Boyce, Kevin; Chapman, George; Cheng, Edward; Chiaberge, Marco; Cox, Colin; Desiardins, Tyler; Dye, Darryl; Ellis, Tracy; Ferguson, Brian; Fruchter, Andrew; Grogin, Norman; Lim, Pey Lian; Loose, Markus; Lucas, Ray; Lupie, Olivia; Mack, Jennifer; Maybhate, Aparna; Mil, Kathleen; Mutchler, Max; Ricardo, Raphael; Scott, Barbara; Serrano, Beverly; Sirianni, Marco; Smith, Linda; Suchkov, Anatoly A.; Waczynski, Augustyn; Welty, Alan; Wheeler, Thomas; Wilson, Erin

    2010-07-01

    The ACS CCD Electronics Box Replacement (CEB-R) installed during SM4 features a Teledyne SIDECAR ASIC that permits optimization of the WFC via adjustment of CCD clock voltages, bias voltages, and pixel transmission timing. An on-orbit campaign to optimize the performance of the WFC was undertaken at the start of the SMOV period. Initial tests with pre-SM4 default voltages and timing patterns showed that WFC's performance matches or exceeds its pre-failure levels, notwithstanding the expected increases in dark current and hot pixels and the decline in charge-transfer efficiency due to prolonged exposure to HST's radiation environment. One WFC CCD exhibited anomalous behavior when operated with nondefault settings of its reset drain voltage. Consequently, the optimization campaign was truncated after two iterations, and ACS science operations commenced with the pre-SM4 default configuration. Several artifacts attributed to the CEB-R appear in post-SM4 WFC images: large-scale but stable bias gradients, low-level but temporally variable horizontal stripes, a signal-dependent bias shift, and amplifier crosstalk. STScI has developed algorithms for the correction or mitigation of these electronic artifacts as well as for the restoration of images affected by continuously degrading CTE. Standalone correction packages are now or will soon be publicly available. These packages will be incorporated into the calacs package of the OPUS data pipeline by September 2011.

  19. Final report on SIM bilateral INMETRO-LNE comparisons SIM.EM-K6.1 and SIM.EM-K9.1: AC-DC voltage transfer difference

    NASA Astrophysics Data System (ADS)

    Vasconcellos, Renata de Barros e.; Poletaeff, Andre

    2014-01-01

    The objective of this comparison was to compare the measurement capabilities of INMETRO and LNE in the field of AC-DC voltage transfer. INMETRO participated in the previous SIM comparison of AC-DC voltage transfer standards in 2004. In the last few years INMETRO has been improving the methodology of its AC-DC voltage transfer difference measurements, now using multijunction thermal converters. The degrees of equivalence of INMETRO relative to the corresponding CCEM key comparison reference values range between 0.1 µV/V and 10 µV/V in the frame of the SIM.EM-K6.1 key comparison, and between 0.5 µV/V and 4 µV/V in the frame of the SIM.EM-K9.1 key comparison. In all cases, they are consistent with the associated uncertainties. For results that are not linked to CCEM key comparisons, the agreement between INMETRO and LNE is very good at 1.5 V/50 kHz (0.1 µV/V). At 10 Hz (at 1.5 V and at 1000 V) a larger difference is observed between the two laboratories, which remains nevertheless consistent with the given uncertainties. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  20. AC Impedance Studies of Polymer Light-emitting Electrochemical Cells and Light-emitting Diodes

    NASA Astrophysics Data System (ADS)

    Li, Yongfang; Gao, Jun; Heeger, Alan J.; Yu, Gang; Cao, Yong

    1998-03-01

    The alternating current (ac) impedance of polymer light-emitting electrochemical cells (LECs) is studied and compared with that of polymer light-emitting diodes(LEDs) in the frequency range from 100 Hz to 5 M Hz. The device capacitance, resistance and interface characteristics are analyzed using the frequency dependence of the impedance and plots of the imaginary component of the impedance (Z") vs. the real part (Z'). At low bias voltages, polymer LEDs behave as pure capacitors whereas the polymer blend in the LEC exhibits an ionic conductivity contribution to the impedance. With dc bias higher than the energy gap of the semiconducting polymer (eV > Eg), the Z" vs. Z' plot of the LEC is a flattened semicircle, while that of LED is a semicircle with a small tail at low frequencies. In the LED, the capacitance is independent of voltages, the film resistance decreases as the bias voltage is increased in forward bias due to charge injection at higher voltages. In the LEC, the capacitance increases at voltages sufficient to induce electrochemical redox and doping near the electrodes. From this increase, the thickness of the i-layer of the p-i-n junction is estimated to approximately 0.8 of the film thickness (at the bias voltage of 3 V). Thus, in the LEC under operating conditions, the crossover region from p-type occupies most of the film thickness.

  1. Effects Of Pressure And Power On The Ionic Saturation Current And Self-Bias Voltage In A RF Discharge 13.56 MHz Of (SF{sub 6}, O{sub 2}) At Low Pressure

    SciTech Connect

    Alim, M. M.; Zekara, M.; Henni, L.; Tadjine, R.; Lahmar, E.; Henda, K.

    2008-09-23

    In the present work, we are interested in RF plasma discharge for surface texturing in solar cells application. We then present the results of the electrical characterization of plasma reactor at low pressure (<1 Torr) in (SF{sub 6},O{sub 2}) gases mixtures at 13.56 MHz. We've particularly followed the self-bias voltage (V{sub DC}) and the density of ionic current saturation (J{sub s}) depending in various parameters of the discharge as pressure and power.

  2. Vortex ratchet reversal in an asymmetric washboard pinning potential subject to combined dc and ac stimuli.

    PubMed

    Shklovskij, Valerij A; Sosedkin, Vladimir V; Dobrovolskiy, Oleksandr V

    2014-01-15

    The mixed-state resistive response of a superconductor thin film with an asymmetric washboard pinning potential subject to superimposed dc and ac currents of arbitrary amplitudes and frequency at finite temperature is theoretically investigated. The problem is considered in the single-vortex approximation, relying upon the exact solution of the Langevin equation in terms of a matrix continued fraction. The dc voltage response and the absorbed power in ac response are analyzed as functions of dc bias and ac current amplitude and frequency in a wide range of corresponding dimensionless parameters. Predictions are made of (i) a reversal of the rectified voltage at small dc biases and strong ac drives and (ii) a non-monotonic enhancement of the absorbed power in the nonlinear ac response at far sub-depinning frequencies. It is elucidated how and why both these effects appear due to the competition of the fixed internal and the tunable, dc bias-induced external asymmetry of the potential as the only reason. This is distinct from other scenarios used for explaining the vortex ratchet reversal effect so far. PMID:24304564

  3. Suppression of spatially periodic patterns by dc voltage

    NASA Astrophysics Data System (ADS)

    Éber, Nándor; Salamon, Péter; Fekete, Balázs András; Karapinar, Ridvan; Krekhov, Alexei; Buka, Ágnes

    2016-04-01

    The effect of superposed dc and ac applied voltages on two types of spatially periodic instabilities in nematic liquid crystals, flexoelectric domains (FD), and electroconvection (EC) was studied. The onset characteristics, threshold voltages, and critical wave vectors were determined. We found that in general the superposition of driving with different time symmetries inhibits the pattern forming mechanisms for FD and EC as well. As a consequence, the onset extends to much higher voltages than the individual dc or ac thresholds. A dc-bias-induced reduction of the crossover frequency from the conductive to the dielectric EC regimes and a peculiar transition between two types of flexodomains with different wavelengths were detected. Direct measurements of the change of the electrical conductivity and its anisotropy, induced by the applied dc voltage component, showed that the dc bias substantially affects both parameters. Taking into account the experimentally detected variations of the conductivity in the linear stability analysis of the underlying nematohydrodynamic equations, a qualitative agreement with the experimental findings on the onset behavior of spatially periodic instabilities was obtained.

  4. A scanning tunneling microscope break junction method with continuous bias modulation

    NASA Astrophysics Data System (ADS)

    Beall, Edward; Yin, Xing; Waldeck, David H.; Wierzbinski, Emil

    2015-09-01

    Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule. Electronic supplementary information (ESI) available: Additional current-time traces recorded for mesitylene, 2,4-dichlorotoluene, and 3,4-dichlorotoluene under different bias modulation frequencies, determined solvent capacitance values, and traces recorded under various geometrical constraints in the experimental cell. See DOI: 10.1039/c5nr04649a

  5. Operation Method for AC Motor Control during Power Interruption in Direct AC/AC Converter System

    NASA Astrophysics Data System (ADS)

    Shizu, Keiichiro; Azuma, Satoshi

    Direct AC/AC converters have been studied due to their potential use in power converters with no DC-link capacitor, which can contribute to the miniaturization of power converters. However, the absence of a DC-link capacitor makes it difficult to control the AC motor during power interruption. First, this paper proposes a system that realizes AC motor control during power interruption by utilizing a clamp capacitor. In general, direct AC/AC converters have a clamp circuit consisting of a rectifier diode(s) and a clamp capacitor in order to avoid over-voltages. In the proposed system, there is an additional semiconductor switch reverse-parallel to the rectifier diode(s), and the clamp capacitor voltage can be utilized for AC motor control by turning on the additional switch. Second, this paper discusses an operation method for AC motor control and clamp capacitor voltage control during power interruption. In the proposed method “DC-link voltage control”, the kinetic energy in the AC motor is transformed into electrical energy and stored in the clamp capacitor; the clamp capacitor is therefore charged and the capacitor voltage is controlled to remain constant at an instruction value. Third, this paper discusses a switching operation during power interruption. A dead-time is introduced between the operation of turning off all switches on the rectifier side and the operation of turning on the additional switch, which prevents the occurrence of a short circuit between the interrupted power source and the clamp capacitor. Finally, experimental results are presented. During power interruptions, an output current was continuously obtained and the clamp capacitor voltage was maintained to be equal to the instruction value of the capacitor voltage. These results indicate that both AC motor control and capacitor voltage control were successfully achieved by using the proposed system.

  6. Negative hydrogen ion beam extraction from an AC heated cathode driven Bernas-type ion source

    SciTech Connect

    Okano, Y.; Miyamoto, N.; Kasuya, T.; Wada, M.

    2015-04-08

    A plasma grid structure was installed to a Bernas-type ion source used for ion implantation equipment. A negative hydrogen (H{sup −}) ion beam was extracted by an AC driven ion source by adjusting the bias to the plasma grid. The extracted electron current was reduced by positively biasing the plasma grid, while an optimum plasma grid bias voltage for negative ion beam extraction was found to be positive 3 V with respect to the arc chamber. Source operations with AC cathode heating show extraction characteristics almost identical to that with DC cathode heating, except a minute increase in H{sup −} current at higher frequency of cathode heating current.

  7. Ac Impedance Spectroscopy Of Al/A-Sic/C-Si(P)/Al Heterostructure under Illumination

    NASA Astrophysics Data System (ADS)

    Perný, Milan; Šály, Vladimír; Váry, Michal; Mikolášek, Miroslav; Huran, Jozef; Packa, Juraj

    2014-05-01

    The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I - V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.

  8. A novel high-sensitivity electrostatic biased electric field sensor

    NASA Astrophysics Data System (ADS)

    Huang, Jing'ao; Wu, Xiaoming; Wang, Xiaohong; Yan, Xiaojun; Lin, Liwei

    2015-09-01

    In this paper, an electric field sensor (EFS) with high sensitivity is proposed for low-frequency weak-strength ac electric field (E-field) measurements. The EFS is based on a piezoelectric cantilever biased by a strong electrostatic field. The electrostatic bias can enhance the electric field force of a weak ac E-field, thus the cantilever can oscillate in a weak ac E-field and the device sensitivity improves. Theoretical analyses have been established and suggest that a stronger strength of electrostatic field bias would produce a higher sensitivity improvement. In the experiment, a demonstrated sensor consisting of a polyvinylidene fluoride (PVDF) piezoelectric cantilever and a polytetrafluoroethylene (PTFE) electret was built and tested. Instead of extra voltage sources, the PTFE electret was charged to provide the electrostatic field, allowing the EFS a low energy consumption and a simple electric circuit design. The experiment results show good agreement with the simulation. The sensitivity of the cantilever E-field sensor reached 0.84 mV (kV/m)-1 when the surface potential of the electret was  -770 V.

  9. Effect of a direct current bias on the electrohydrodynamic performance of a surface dielectric barrier discharge actuator for airflow control

    NASA Astrophysics Data System (ADS)

    Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

    2015-02-01

    The effect of a DC bias on the electrohydrodynamics (EHD) force induced by a surface dielectric barrier AC discharge actuator for airflow control at the atmospheric pressure is investigated. The measurement of the surface potential due to charge deposition at different DC biases is carried out by using a special designed corona like discharge potential probe. From the surface potential data, the plasma electromotive force is shown not affected much by the DC biases except for some reduction of the DC bias near the exposed electrode edge for the sheath-like configuration. The total thrust is measured by an analytical balance, and an almost linear relationship to the potential voltage at the exposed electrode edge is found for the direct thrust force. The temporally averaged ionic wind characteristics are investigated by Pitot tube sensor and schlieren visualization system. It is found that the ionic wind velocity profiles with different DC biases are almost the same in the AC discharge plasma area but gradually diversified in the further downstream area as well as the upper space away from the discharge plasma area. Also, the DC bias can significantly modify the topology of the ionic wind produced by the AC discharge actuator. These results can provide an insight into how the DC biases to affect the force generation.

  10. Design and Operation of 1000-fold Voltage Multiplier based on Double-flux-quantum Amplifier

    NASA Astrophysics Data System (ADS)

    Sato, Y.; Moriya, M.; Shimada, H.; Mizugaki, Y.; Maezawa, M.

    Rapid-single-flux-quantum digital-to-analogue converters (RSFQ-DACs) are now under development for ac voltage standard applications. The voltage multiplier (VM), which precisely amplifies the input voltage, is a key component for RSFQ-DACs. Because the amount of bias current for a conventional VM increases in proportion to its multiplication factor, we have been looking for a VM device which is operated on a different principle. In this paper, we report our design of a 1000-fold VM comprising double flux quantum amplifiers (DFQAs) of which the amount of bias current is independent of its multiplication factor. Test circuits were fabricated using a 2.5 kA/cm2 Nb process. We confirm that the experimental results demonstrate the 1000-fold operation up to 13.2 GHz input SFQ pulse repetition frequency.

  11. First- and second-harmonic detection of spin accumulation in a multiterminal lateral spin valve under high-bias ac current

    NASA Astrophysics Data System (ADS)

    Hu, Shaojie; Nomura, Tatsuya; Uematsu, Ginga; Asam, Nagarjuna; Kimura, Takashi

    2016-07-01

    We have investigated the transport properties of electrically and thermally excited spin currents in a lateral spin valve consisting of a spin injector and detector with a middle ferromagnetic wire by detecting the first- and second-harmonic voltages. The first-harmonic spin signal was significantly suppressed by the middle ferromagnetic wire because of the spin absorption effect. On the other hand, in the second-harmonic signal, a small signal related to the middle ferromagnetic wire was observed in addition to a conventional spin signal with a reduced magnitude. This indicates that the additional ferromagnetic wire acts not only as the spin absorber but also as another spin injector under thermal spin injection, because the heat current caused by direct spin injection propagates to the middle ferromagnetic wire and creates another temperature gradient. By using this effect, we show that the magnetization direction of a ferromagnetic nanodot embedded in a nonmagnetic Cu wire becomes measurable.

  12. UPS with input commutation between ac and dc sources of power

    SciTech Connect

    Severinsky, A.J.

    1993-08-31

    An uninterruptible power supply is described, said power supply comprising: AC input terminal means for receiving a first AC voltage from an AC power source; DC input terminal means for receiving a first DC voltage from a DC power source; AC output terminal means for connecting to a load; converter means for converting said first AC voltage to a second DC voltage across electrical charge storage means coupled to said converter means, said second DC voltage being larger than the maximum peak voltage of said first AC voltage and said first DC voltage; switching means coupled to said AC power source and said DC power source for selectively connecting said AC power source or said DC power source to said converter means; inverter means coupled to said electrical charge storage means for receiving said second DC voltage and inverting said second DC voltage to a second AC voltage, said second AC voltage being coupled to said AC output terminal means; and control means coupled to said switching means for controlling the operation of said switching means, said control means operating said switching means to connect said AC power source to said converter means only when said first AC voltage is within a predetermined range and operating to connect said DC power source to said converter means when said first AC voltage is outside of said range.

  13. Electric Control of Exchange Bias Training

    NASA Astrophysics Data System (ADS)

    Echtenkamp, W.; Binek, Ch.

    2013-11-01

    Voltage-controlled exchange bias training and tunability are introduced. Isothermal voltage pulses are used to reverse the antiferromagnetic order parameter of magnetoelectric Cr2O3, and thus continuously tune the exchange bias of an adjacent CoPd film. Voltage-controlled exchange bias training is initialized by tuning the antiferromagnetic interface into a nonequilibrium state incommensurate with the underlying bulk. Interpretation of these hitherto unreported effects contributes to new understanding in electrically controlled magnetism.

  14. Effect of bias voltage and temperature on lifetime of wireless neural interfaces with Al ₂O₃ and parylene bilayer encapsulation.

    PubMed

    Xie, Xianzong; Rieth, Loren; Caldwell, Ryan; Negi, Sandeep; Bhandari, Rajmohan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2015-02-01

    The lifetime of neural interfaces is a critical challenge for chronic implantations, as therapeutic devices (e.g., neural prosthetics) will require decades of lifetime. We evaluated the lifetime of wireless Utah electrode array (UEA) based neural interfaces with a bilayer encapsulation scheme utilizing a combination of alumina deposited by Atomic Layer Deposition (ALD) and parylene C. Wireless integrated neural interfaces (INIs), equipped with recording version 9 (INI-R9) ASIC chips, were used to monitor the encapsulation performance through radio-frequency (RF) power and telemetry. The wireless devices were encapsulated with 52 nm of ALD Al2O3 and 6 μm of parylene C, and tested by soaking in phosphate buffered solution (PBS) at 57 °C for 4× accelerated lifetime testing. The INIs were also powered continuously through 2.765 MHz inductive power and forward telemetry link at unregulated 5 V. The bilayer encapsulated INIs were fully functional for ∼35 days (140 days at 37 °C equivalent) with consistent power-up frequencies (∼910 MHz), stable RF signal (∼-75 dBm), and 100 % command reception rate. This is ∼10 times of equivalent lifetime of INIs with parylene-only encapsulation (13 days) under same power condition at 37 °C. The bilayer coated INIs without continuous powering lasted over 1860 equivalent days (still working) at 37 °C. Those results suggest that bias stress is a significant factor to accelerate the failure of the encapsulated devices. The INIs failed completely within 5 days of the initial frequency shift of RF signal at 57 °C, which implied that the RF frequency shift is an early indicator of encapsulation/device failure. PMID:25653054

  15. Digital ac monitor

    DOEpatents

    Hart, George W.; Kern, Jr., Edward C.

    1987-06-09

    An apparatus and method is provided for monitoring a plurality of analog ac circuits by sampling the voltage and current waveform in each circuit at predetermined intervals, converting the analog current and voltage samples to digital format, storing the digitized current and voltage samples and using the stored digitized current and voltage samples to calculate a variety of electrical parameters; some of which are derived from the stored samples. The non-derived quantities are repeatedly calculated and stored over many separate cycles then averaged. The derived quantities are then calculated at the end of an averaging period. This produces a more accurate reading, especially when averaging over a period in which the power varies over a wide dynamic range. Frequency is measured by timing three cycles of the voltage waveform using the upward zero crossover point as a starting point for a digital timer.

  16. ACS after Servicing Mission 4: The WFC Optimization Campaign

    NASA Astrophysics Data System (ADS)

    Golimowski, David; Cheng, Ed; Loose, Markus; Sirianni, Marco; Lupie, Olivia; Smith, Linda; Arslanian, Steve; Boyce, Kevin; Chapman, George; Chiaberge, Marco; Desjardins, Tyler; Dye, Darryl; Grogin, Norman; Lim, Pey Lian; Lucas, Ray; Maybhate, Aparna; Mil, Kathleen; Mutchler, Max; Ricardo, Raphael; Scott, Barbara; Serrano, Beverly; Suchkov, Anatoly; Waczynski, Augustyn; Welty, Alan; Wheeler, Thomas; Wilson, Erin

    2011-07-01

    The ACS CCD Electronics Box Replacement (CEB-R) installed during SM4 features a Teledyne SIDECAR ASIC that permits optimization of the WFC via adjustment of CCD clock voltages, bias voltages, and pixel transmission timing. A built-in oscilloscope mode allows sensing of the analog signal from each output amplifier. An on-orbit campaign to optimize the performance of the WFC was undertaken at the start of the SMOV period. Initial tests with pre-SM4 default voltages and timing patterns showed that WFC's performance matches or exceeds its pre-failure levels, notwithstanding the expected increases in dark current and hot pixels and the decline in charge-transfer efficiency due to prolonged exposure to HST's radiation environment. The WFC2 CCD exhibited anomalous behavior when operated with nondefault settings of its amplifiers' reset-drain voltage (VOD). The CCD again displayed normal behavior when VOD was restored to its default setting. Consequently, the Optimization Campaign was truncated after two iterations, and ACS science operations commenced with the pre-SM4 default configuration.

  17. An ac bridge readout for bolometric detectors

    NASA Technical Reports Server (NTRS)

    Rieke, F. M.; Lange, A. E.; Beeman, J. W.; Haller, E. E.

    1989-01-01

    The authors have developed a bolometer readout circuit which greatly improves the low-frequency stability of bolometric detectors. The circuit uses an ac bias voltage and two matched bolometers and allows stable dc bolometer operation for integration times greater than 10 s. In astronomical applications the readout allows for qualitatively different observation modes (e.g. staring or slow-drift scanning) which are particularly well suited for space observations and for the use of arrays. In many applications the readout can increase sensitivity. The authors present noise spectra for 4He temperature bolometers with no excess noise at frequencies greater than 0.1 Hz. The measured optical responsivity of a bolometer operated with the present readout is the same as that of a bolometer operated with a conventional readout.

  18. Punch-through characteristics of FOXFET biased detectors

    SciTech Connect

    Bacchetta, N.; Da Ros, R.; Giraldo, A.; Gotra, Yu. ); Bisello, D.; Verzellesi, G. Univ. di Padova ); Paccagnella, A. Univ. di Cagliari . Istituto di Elettrotecnica)

    1994-08-01

    The main punch-through characteristics have been studied on Field OXide FETs (FOXFETs) used for microstrip biasing in Si detectors. The voltage-current DC curves have been studied on devices with different channel width/length ratios, fabricated on Si substrates with different doping levels. The punch-through threshold voltage depends on the positive charge in the gate oxide, device layout and temperature. The relation between punch-through current and dynamic resistance is insensitive to charge accumulation in the gate oxide induced by irradiation and to different Si donor doping levels. Dynamic resistance however varies as the doping changes from n- to p-type, and it also depends on the Si bulk damage induced by neutron irradiation. The AC impedance will reproduce the DC dynamic resistance, but show also large effects due to parasitic capacitance, which dominates the FOXFET response at high frequency and can affect the detector performance.

  19. Module Two: Voltage; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will study and learn what voltage is, how it is generated, what AC (alternating current) and DC (direct current) are and why both kinds are needed, and how to measure voltages. The module is divided into six lessons: EMF (electromotive force) from chemical action, magnetism, electromagnetic induction, AC voltage, the…

  20. ac bidirectional motor controller

    NASA Technical Reports Server (NTRS)

    Schreiner, K.

    1988-01-01

    Test data are presented and the design of a high-efficiency motor/generator controller at NASA-Lewis for use with the Space Station power system testbed is described. The bidirectional motor driver is a 20 kHz to variable frequency three-phase ac converter that operates from the high-frequency ac bus being designed for the Space Station. A zero-voltage-switching pulse-density-modulation technique is used in the converter to shape the low-frequency output waveform.

  1. Achieving High Performance in AC-Field Driven Organic Light Sources

    PubMed Central

    Xu, Junwei; Carroll, David L.; Smith, Gregory M.; Dun, Chaochao; Cui, Yue

    2016-01-01

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m2 with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today’s OLEDs in performance. PMID:27063414

  2. Achieving High Performance in AC-Field Driven Organic Light Sources.

    PubMed

    Xu, Junwei; Carroll, David L; Smith, Gregory M; Dun, Chaochao; Cui, Yue

    2016-01-01

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m(2) with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today's OLEDs in performance. PMID:27063414

  3. Achieving High Performance in AC-Field Driven Organic Light Sources

    NASA Astrophysics Data System (ADS)

    Xu, Junwei; Carroll, David L.; Smith, Gregory M.; Dun, Chaochao; Cui, Yue

    2016-04-01

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m2 with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today’s OLEDs in performance.

  4. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobate's (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps - 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensor's U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  5. Intergroup bias.

    PubMed

    Hewstone, Miles; Rubin, Mark; Willis, Hazel

    2002-01-01

    This chapter reviews the extensive literature on bias in favor of in-groups at the expense of out-groups. We focus on five issues and identify areas for future research: (a) measurement and conceptual issues (especially in-group favoritism vs. out-group derogation, and explicit vs. implicit measures of bias); (b) modern theories of bias highlighting motivational explanations (social identity, optimal distinctiveness, uncertainty reduction, social dominance, terror management); (c) key moderators of bias, especially those that exacerbate bias (identification, group size, status and power, threat, positive-negative asymmetry, personality and individual differences); (d) reduction of bias (individual vs. intergroup approaches, especially models of social categorization); and (e) the link between intergroup bias and more corrosive forms of social hostility. PMID:11752497

  6. Inexpensive pulse-train converter measures analog voltage

    NASA Technical Reports Server (NTRS)

    Sturman, J. C.

    1977-01-01

    Converter measures small voltages or currents in presence of very large common-mode voltages (thousands of volts ac or dc). Advantages are low power consumption, transmission via single isolated channel, simplicity, and operation from single-polarity power supply.

  7. Voltage regulator

    SciTech Connect

    Rossetti, N.

    1986-12-09

    This patent describes a prior art integrated circuit voltage regulator having an unregulated voltage input terminal and a regulated voltage output terminal, and further comprising: a first transistor having an emitter, a collector and a base, the first transistor having a first base-emitter voltage characteristic, the collector of the first transistor being connected through a first resistor to a current source. The current source is derived from the unregulated voltage, the emitter of the first transistor being connected through a second resistor to a reference voltage; and a second transistor having an emitter, a collector and a base, the second transistor having a second base-emitter voltage characteristic, the base of the second transistor being connected to the collector of the first transistor. The collector of the second transistor is connected to the current source, the emitter of the second transistor being connected to the reference voltage. The regulated output of the voltage regulator is provided at the collector of the second transistor and the regulated voltage output is a function of the first base-emitter voltage characteristic of the first transistor plus the quantity comprising the difference between the first base-emitter voltage characteristic of the first transistor and the second base-emitter voltage characteristic of the second transistor, times the ratio of the value of resistance of the first resistor and the value of resistance of the second resistor. The improvement described here comprises: a third transistor having a collector, an emitter and a base.

  8. Frequency and voltage dependence of series resistance in a solar cell

    NASA Astrophysics Data System (ADS)

    Ogle, Alexander; Cox, Thaddeus; Heath, Jennifer

    While admittance measurements of solar cells are typically conducted in reverse or at zero bias, and analyzed using the depletion approximation, the operating point of the solar cell is in forward bias, and the series resistance is often estimated using IV curves with a high forward current. In this mode, the device is no longer in the depletion regime, and the large number of injected minority carriers alter the transport properties significantly. In our Cu(In,Ga)Se2 devices, we measure negative values of capacitance at high forward bias, which may be linked to injected minority carriers and carrier transport limitations, although our calculations of capacitance may also be influenced by series resistance. In this study, we compare ac and dc measurements of voltage dependent series resistance to try to better understand the negative capacitance signal.

  9. High-frequency ac power distribution in Space Station

    NASA Technical Reports Server (NTRS)

    Tsai, Fu-Sheng; Lee, Fred C. Y.

    1990-01-01

    A utility-type 20-kHz ac power distribution system for the Space Station, employing resonant power-conversion techniques, is presented. The system converts raw dc voltage from photovoltaic cells or three-phase LF ac voltage from a solar dynamic generator into a regulated 20-kHz ac voltage for distribution among various loads. The results of EASY5 computer simulations of the local and global performance show that the system has fast response and good transient behavior. The ac bus voltage is effectively regulated using the phase-control scheme, which is demonstrated with both line and load variations. The feasibility of paralleling the driver-module outputs is illustrated with the driver modules synchronized and sharing a common feedback loop. An HF sinusoidal ac voltage is generated in the three-phase ac input case, when the driver modules are phased 120 deg away from one another and their outputs are connected in series.

  10. High-frequency graphene voltage amplifier.

    PubMed

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date. PMID:21805988

  11. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  12. Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

    SciTech Connect

    Lee, Sangwon; Jeon, Kichan; Park, Jun-Hyun; Kim, Sungchul; Kong, Dongsik; Kim, Dong Myong; Kim, Dae Hwan; Kim, Sangwook; Kim, Sunil; Hur, Jihyun; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Park, Youngsoo; Jung, U-In

    2009-09-28

    Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift ({delta}V{sub T}) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced {delta}V{sub T} is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the I{sub DS}-V{sub GS} curve with an insignificant change in the subthreshold slope, as well as the deformation of the C{sub G}-V{sub G} curves.

  13. Dynamic pattern formation of liquid crystals using binary self-assembled monolayers on an ITO surface under DC voltage.

    PubMed

    Ishida, Takao; Oyama, Makiko; Terada, Kei-ichi; Haga, Masa-aki

    2014-12-01

    There have been numerous studies of liquid crystal (LC) convection using sandwich-type LC cells under AC voltage. In contrast to previous LC convection studies under AC voltage, we propose the use of a binary self-assembled monolayer (SAM) with a redox-active Ru complex and insulating octadecyl phosphonic acid (C18) molecules on an indium tin oxide (ITO) surface as the electrode of sandwich-type LC cells under DC bias voltage. This is because the functionalized molecules immobilized on the ITO surface are expected to control the LC orientation and electrical conduction of LC cells, under an exact DC bias voltage. We successfully achieved LC pattern formation using ITO electrodes with binary SAMs in LC cells. Moreover, we confirmed that the LC pattern size was increased by increasing the coverage of the Ru complex in binary SAMs. We consider that a combination of three factors, electrical conduction change, controlling of LC orientation in the initial stage and redox-activity of the Ru-complex, is the reason for LC convection although we cannot fully explain the distribution of these three factors. We believe that our LC pattern formation is promising for new type devices e.g., artificial compound eyes using the LC device technology. PMID:25327940

  14. Sympathetic bias.

    PubMed

    Levy, David M; Peart, Sandra J

    2008-06-01

    We wish to deal with investigator bias in a statistical context. We sketch how a textbook solution to the problem of "outliers" which avoids one sort of investigator bias, creates the temptation for another sort. We write down a model of the approbation seeking statistician who is tempted by sympathy for client to violate the disciplinary standards. We give a simple account of one context in which we might expect investigator bias to flourish. Finally, we offer tentative suggestions to deal with the problem of investigator bias which follow from our account. As we have given a very sparse and stylized account of investigator bias, we ask what might be done to overcome this limitation. PMID:17925315

  15. Simple Equipment for Imaging AC.

    ERIC Educational Resources Information Center

    Kamata, Masahiro; Anayama, Takayuki

    2003-01-01

    Presents an effective way to demonstrate the difference between direct current and alternating current using red and green LEDs. Describes how to make a tool that shows how an AC voltage changes with time using the afterimage effect of the LEDs. (Author/NB)

  16. Energy saving in ac generators

    NASA Technical Reports Server (NTRS)

    Nola, F. J.

    1980-01-01

    Circuit cuts no-load losses, without sacrificing full-load power. Phase-contro circuit includes gate-controlled semiconductor switch that cuts off applied voltage for most of ac cycle if generator idling. Switch "on" time increases when generator is in operation.

  17. VOLTAGE REGULATOR

    DOEpatents

    Von Eschen, R.L.; Scheele, P.F.

    1962-04-24

    A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

  18. AC resistance measuring instrument

    DOEpatents

    Hof, P.J.

    1983-10-04

    An auto-ranging AC resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an AC excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance. After the auto-ranging and auto-compensation functions are complete, the microprocessor calculates the resistance of the load from the selected range resistance, the excitation signal, and the load voltage signal, and displays of the measured resistance on a digital display of the instrument. 8 figs.

  19. AC Resistance measuring instrument

    DOEpatents

    Hof, Peter J.

    1983-01-01

    An auto-ranging AC resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an AC excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance. After the auto-ranging and auto-compensation functions are complete, the microprocessor calculates the resistance of the load from the selected range resistance, the excitation signal, and the load voltage signal, and displays of the measured resistance on a digital display of the instrument.

  20. An automatic bridge for inductive voltage dividers

    SciTech Connect

    Chang, P.; Liang, C.P.; Hsiao, J.C.

    1994-12-31

    We describe an automatic, injection-type bridge for inductive voltage divider (IVD) applications at low audio frequencies. We used it to self-calibrate programmable IVDs fabricated in house, by an automated {open_quotes}boot-strap{close_quotes} procedure. It is the heart of our reference standard for ac voltage ratios as well as a calibration system for IVDs.

  1. High-voltage portable pulsed power supply fed by low voltage source

    NASA Astrophysics Data System (ADS)

    Rezanejad, Mohammad; Sheikholeslami, Abdolreza; Adabi, Jafar; Valinejad, Mohammadreza

    2016-05-01

    This article proposes a new structure of voltage multiplier for portable pulsed power applications. In this configuration, which is based on capacitor-diode voltage multiplier, the capacitors are charged by low AC input voltage and discharge through the load in series during pulse generation mode. The proposed topology is achieved by integrating of solid-state switches with conventional voltage multiplier, which can increase the low input voltage step by step and generate high-voltage high-frequency pulsed power across the load. After some discussion, simulations and experimental results are provided to verify the effectiveness of the proposed topology.

  2. Hindsight Bias.

    PubMed

    Roese, Neal J; Vohs, Kathleen D

    2012-09-01

    Hindsight bias occurs when people feel that they "knew it all along," that is, when they believe that an event is more predictable after it becomes known than it was before it became known. Hindsight bias embodies any combination of three aspects: memory distortion, beliefs about events' objective likelihoods, or subjective beliefs about one's own prediction abilities. Hindsight bias stems from (a) cognitive inputs (people selectively recall information consistent with what they now know to be true and engage in sensemaking to impose meaning on their own knowledge), (b) metacognitive inputs (the ease with which a past outcome is understood may be misattributed to its assumed prior likelihood), and (c) motivational inputs (people have a need to see the world as orderly and predictable and to avoid being blamed for problems). Consequences of hindsight bias include myopic attention to a single causal understanding of the past (to the neglect of other reasonable explanations) as well as general overconfidence in the certainty of one's judgments. New technologies for visualizing and understanding data sets may have the unintended consequence of heightening hindsight bias, but an intervention that encourages people to consider alternative causal explanations for a given outcome can reduce hindsight bias. PMID:26168501

  3. Low distortion automatic phase control circuit. [voltage controlled phase shifter

    NASA Technical Reports Server (NTRS)

    Hauge, G.; Pederson, C. W. (Inventor)

    1974-01-01

    A voltage controlled phase shifter is rendered substantially harmonic distortion free over a large dynamic input range by employing two oppositely poled, equally biased varactor diodes as the voltage controlled elements which adjust the phase shift. Control voltages which affect the bias of both diodes equally are used to adjust the phase shift without increasing distortion. A feedback stabilized phase shifter is rendered substantially frequency independent by employing a phase detector to control the phase shift of the voltage controlled phase shifter.

  4. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-07-01

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  5. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means.

  6. Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement

    SciTech Connect

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-03-17

    This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1−x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

  7. High Voltage Power Supply Design Guide for Space

    NASA Technical Reports Server (NTRS)

    Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

    2006-01-01

    This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

  8. Polaron effects on the dc- and ac-tunneling characteristics of molecular Josephson junctions

    NASA Astrophysics Data System (ADS)

    Wu, B. H.; Cao, J. C.; Timm, C.

    2012-07-01

    We study the interplay of polaronic effect and superconductivity in transport through molecular Josephson junctions. The tunneling rates of electrons are dominated by vibronic replicas of the superconducting gap, which show up as prominent features in the differential conductance for the dc and ac current. For relatively large molecule-lead coupling, a features that appears when the Josephson frequency matches the vibron frequency can be identified with an over-the-gap structure observed by Marchenkov [Nat. Nanotech. 1748-338710.1038/nnano.2007.2182, 481 (2007)]. However, we are more concerned with the weak-coupling limit, where resonant tunneling through the molecular level dominates. We find that certain features involving both Andreev reflection and vibron emission show an unusual shift of the bias voltage V at their maximum with the gate voltage Vg as V˜(2/3)Vg. Moreover, due to the polaronic effect, the ac Josephson current shows a phase shift of π when the bias eV is increased by one vibronic energy quantum ℏωv. This distinctive even-odd effect is explained in terms of the different sign of the coupling to vibrons of electrons and of Andreev-reflected holes.

  9. Dual-voltage power supply has increased efficiency

    NASA Technical Reports Server (NTRS)

    Sturman, J. C.

    1966-01-01

    Simple circuit provides two different dc output voltages from an ac source. It employs a full-wave rectifier connected to two passive branches from which the separate dc voltages are taken. The outputs have low ripple and good voltage regulation.

  10. Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

    SciTech Connect

    Chu, Yueh-Chieh; Tzeng, Yonhua; Auciello, Orlando

    2014-01-14

    Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from −490 V to −375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from −375 V to −390 V for silicon pre-heated to 900 °C. Method C employs −350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

  11. Effects of temperature and bias voltage on the properties of a PET detector module based on the individual readout of 1 × 1 mm2 LYSO crystals by monolithic arrays of SiPMs

    NASA Astrophysics Data System (ADS)

    Fürst, S.; Pulko, J.; Hohberg, M.; Mann, A. B.; Ziegler, S. I.

    2012-08-01

    The aim of this work was the development and evaluation of a detector based on SiPMs and fast scintillation crystals feasible for combined PET and MR imaging. Properties of two different 4 × 4 arrays of SiPMs by Hamamatsu — breakdown voltage, pulse height, energy resolution, dark counts and optical crosstalk — were investigated in terms of temperature and voltage dependence. Each channel in such an array consists of either 400 or 1600 cells and has a surface area of 1 × 1 mm2. For the alignment and coupling of individual scintillation crystals (1 × 1 × 20 mm3) to these channels a special holder was designed. The breakdown voltages were at about 70 V for both models. Energy resolutions better than 23 % were observed. A temperature coefficient of the signal amplitude of (-2.7 ± 0.2) %/K and a voltage coefficient of (63 ± 2) %/V were determined for the model with 400 cells, whereas optical crosstalk was found to be an issue that needs further improvement. The dark count rate was below 1 MHz.

  12. AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; van de Kuur, J.; Bandler, S.; Bruijn, M.; de Korte, P.; Gao, J. R.; den Hartog, R.; Hijmering, R. A.; Hoevers, H.; Koshropanah, P.; Kilbourne, C.; Lindemann, M. A.; Parra Borderias, M.; Ridder, M.

    2011-01-01

    SRON is developing Frequency Domain Multiplexing (FDM) for the read-out of transition edge sensor (TES) soft x-ray microcalorimeters for the XMS instrument of the International X-ray Observatory and far-infrared bolometers for the SAFARI instrument on the Japanese mission SPICA. In FDM the TESs are AC voltage biased at frequencies from 0.5 to 6 MHz in a superconducting LC resonant circuit and the signal is read-out by low noise and high dynamic range SQUIDs amplifiers. The TES works as an amplitude modulator. We report on several AC bias experiments performed on different detectors. In particular, we discuss the results on the characterization of Goddard Space Flight Center x-ray pixels and SRON bolometers. The paper focuses on the analysis of different read-out configurations developed to optimize the noise and the impedance matching between the detectors and the SQUID amplifier. A novel feedback network electronics has been developed to keep the SQUID in flux locked loop, when coupled to superconducting high Q circuits, and to optimally tune the resonant bias circuit. The achieved detector performances are discussed in view of the instrument requirement for the two space missions.

  13. ac-resistance-measuring instrument

    SciTech Connect

    Hof, P.J.

    1981-04-22

    An auto-ranging ac resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an ac excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance.

  14. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions.

    PubMed

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-22

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences (GC)NGC and (GC)1(TA)NTA (GC)3 sandwiched between two Pt electrodes. We show that at low temperature DNA sequence (GC)NGC exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence (GC)1(TA)NTA (GC)3 with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules. PMID:25927276

  15. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-01

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences {{(GC)}{{NGC}}} and {{(GC)}1}{{(TA)}{{NTA}}}{{(GC)}3} sandwiched between two Pt electrodes. We show that at low temperature DNA sequence {{(GC)}{{NGC}}} exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence {{(GC)}1}{{(TA)}{{NTA}}}{{(GC)}3} with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules.

  16. Voltage modulation of propagating spin waves in Fe

    SciTech Connect

    Nawaoka, Kohei; Shiota, Yoichi; Miwa, Shinji; Tamura, Eiiti; Tomita, Hiroyuki; Mizuochi, Norikazu; Shinjo, Teruya; Suzuki, Yoshishige

    2015-05-07

    The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

  17. Rapid and precise measurement of flatband voltage

    NASA Technical Reports Server (NTRS)

    Li, S. P.; Ryan, M.; Bates, E. T.

    1976-01-01

    The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

  18. Self regulating body bias generator

    NASA Technical Reports Server (NTRS)

    Hass, Kenneth (Inventor)

    2004-01-01

    The back bias voltage on a functional circuit is controlled through a closed loop process. A delay element receives a clock pulse and produces a delay output. The delay element is advantageously constructed of the same materials as the functional circuit so that the aging and degradation of the delay element parallels the degradation of the functional circuit. As the delay element degrades, the transistor switching time increases, increasing the time delay of the delay output. An AND gate compares a clock pulse to an output pulse of the delay element, the AND output forming a control pulse. A duty cycle of the control pulse is determined by the delay time between the clock pulse and the delay element output. The control pulse is received at the input of a charge pump. The charge pump produces a back bias voltage which is then applied to the delay element and to the functional circuit. If the time delay produced by the delay element exceeds the optimal delay, the duty cycle of the control pulse is shortened, and the back bias voltage is lowered, thereby increasing the switching speed of the transistors in the delay element and reducing the time delay. If the throughput of the delay element is too fast, the duty cycle of the control pulse is lengthened, raising the back bias voltage produced by the charge pump. This, in turn, lowers the switching speed of the transistors in both the delay element and the functional circuit. The slower switching speed in the delay element increases time delay. In this manner, the switching speed of the delay element, and of the functional circuit, is maintained at a constant level over the life of the circuit.

  19. Optical rectification at visible frequency in biased bilayer graphene

    NASA Astrophysics Data System (ADS)

    Hipolito, F.; Pereira, Vitor M.

    2015-03-01

    The second order response of the electrical current to an electromagnetic field is analyzed within the framework of non-equilibrium many-body perturbation theory for the case of a two-dimensional electronic system such as graphene and its bilayer. The absence of inversion symmetry in a biased graphene bilayer allows a finite DC response in second order to an AC electromagnetic wave. The induced DC current is evaluated for biased bilayer at finite temperature, and its tunability is analyzed as a function of electron density, which can be experimentally varied by means of a global gate voltage applied to the sample. Both intrinsic and photon drag microscopic processes are considered, as they contribute on similar footing to the photocurrent in general. However, the dependencies of these two contributions on the polarization state of the incident light are different, which allows the manipulation of the relative contribution of intrinsic versus photon drag contributions by tuning the experimental parameters. For example, the photocurrent emerging from circularly polarized light stems entirely from photon drag, as the circular photogalvanic effect is forbidden by the C3 rotation symmetry of the honeycomb lattice.

  20. A Matter of Quantum Voltages

    SciTech Connect

    Sellner, Bernhard; Kathmann, Shawn M.

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. Electron holography is able to measure the variation of voltages in matter and modern supercomputers allow the calculation of quantum voltages with practically unlimited spatial and temporal resolution of bulk systems. Of particular interest is the Mean Inner Potential (Vo) - the spatial average of these voltages. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of Vo for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Furthermore, we predict Vo as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. This research used resources of the National Energy Research Scientific Computing Center, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  1. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance spectroscopy method

    NASA Astrophysics Data System (ADS)

    Mert, Yıldırım; Perihan, Durmuş; Şemsettin, Altındal

    2013-10-01

    In this study, Al/p—Si and Al/Bi4Ti3O12/p—Si structures are fabricated and their interface states (Nss), the values of series resistance (Rs), and AC electrical conductivity (σac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance—voltage (C—V) and conductance—voltage (G—V) measurements. In addition, the effect of interfacial Bi4Ti3O12 (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy (Ea), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal—semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (NA), built-in potential (Vbi), Fermi energy (EF), image force barrier lowering (Δ Φb), and barrier height (Φb), are extracted using reverse bias C-2—V characteristics as a function of temperature.

  2. The Electrically Controlled Exchange Bias

    NASA Astrophysics Data System (ADS)

    Harper, Jacob

    Controlling magnetism via voltage in the virtual absence of electric current is the key to reduce power consumption while enhancing processing speed, integration density and functionality in comparison with present-day information technology. Almost all spintronic devices rely on tailored interface magnetism. Controlling magnetism at thin-film interfaces, preferably by purely electrical means, is therefore a key challenge to better spintronics. However, there is no direct interaction between magnetization and electric fields, thus making voltage control of magnetism in general a scientific challenge. The significance of controlled interface magnetism started with the exchange-bias effect. Exchange bias is a coupling phenomenon at magnetic interfaces that manifests itself prominently in the shift of the ferromagnetic hysteresis loop along the magnetic-field axis. Various attempts on controlling exchange bias via voltage utilizing different scientific principles have been intensively studied recently. The majority of present research is emphasizing on various complex oxides. Our approach can be considered as a paradigm shift away from complex oxides. We focus on a magnetoelectric antiferromagnetic simple oxide Cr2O3. From a combination of experimental and theoretical efforts, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This is a significant scientific breakthrough providing a new route towards potentially revolutionizing information technology. In addition, a second path of electrically controlled exchange bias is introduced by exploiting the piezoelectric property of BaTiO3. An exchange-bias Co

  3. Biased Allostery.

    PubMed

    Edelstein, Stuart J; Changeux, Jean-Pierre

    2016-09-01

    G-protein-coupled receptors (GPCRs) constitute a large group of integral membrane proteins that transduce extracellular signals from a wide range of agonists into targeted intracellular responses. Although the responses can vary depending on the category of G-proteins activated by a particular receptor, responses were also found to be triggered by interactions of the receptor with β-arrestins. It was subsequently discovered that for the same receptor molecule (e.g., the β-adrenergic receptor), some agonists have a propensity to specifically favor responses by G-proteins, others by β-arrestins, as has now been extensively studied. This feature of the GPCR system is known as biased agonism and is subject to various interpretations, including agonist-induced conformational change versus selective stabilization of preexisting active conformations. Here, we explore a complete allosteric framework for biased agonism based on alternative preexisting conformations that bind more strongly, but nonexclusively, either G-proteins or β-arrestins. The framework incorporates reciprocal effects among all interacting molecules. As a result, G-proteins and β-arrestins are in steric competition for binding to the cytoplasmic surface of either the G-protein-favoring or β-arrestin-favoring GPCR conformation. Moreover, through linkage relations, the strength of the interactions of G-proteins or β-arrestins with the corresponding active conformation potentiates the apparent affinity for the agonist, effectively equating these two proteins to allosteric modulators. The balance between response alternatives can also be influenced by the physiological concentrations of either G-proteins or β-arrestins, as well as by phosphorylation or interactions with positive or negative allosteric modulators. The nature of the interactions in the simulations presented suggests novel experimental tests to distinguish more fully among alternative mechanisms. PMID:27602718

  4. Mechanically Biased, Hinged Pairs of Piezoelectric Benders

    NASA Technical Reports Server (NTRS)

    Sager, Frank E.

    2005-01-01

    The upper part of the figure depicts an actuator that comprises two mechanically biased piezoelectric benders hinged together at their ends and equipped with tabs at their mid-length points for attachment to the relatively moving objects that are to be actuated. In the example of the figure, the attachment tabs are labeled to indicate that the actuator is used to drive a pump piston relative to a base plate. Actuators of this type could be used to drive low-power, small-volume pumps in consumer, medical, and aerospace applications, and to generate and measure linear displacements in such robotic applications as teleoperation and tactile feedback. Each bender is a bimorph a unitary plate that comprises an upper and a lower piezoelectric layer plus electrode layers. Benders may also be made of several layers arranged to produce the same effect at the lower operating voltages. As stated above, each bender is mechanically biased; it is fabricated to have a small permanent curvature (the bias curvature) in the absence of applied voltage. As on other bimorphs, the electrical connections on each bender are arranged so that an applied voltage of suitable polarity causes the upper layer to expand and the lower layer to contract. In this case, the net effect of applying the voltage is that the plate becomes more concave as viewed from below. Conversely, an applied voltage of the opposite polarity causes the plate to become less concave as viewed from below. The benders in a hinged pair are oriented with their bias curvatures concave inward, so that there is a bias distance between the attachment tabs. The two benders are connected electrically in parallel, with their connection polarities chosen so that an applied voltage of one polarity causes both benders to become more convex inward (more bent), while an applied voltage of the opposite polarity causes both benders to become less convex inward (less bent). An increase or decrease in bend is accompanied by an increase or

  5. High-voltage supply for neutron tubes in well-logging applications

    DOEpatents

    Humphreys, D.R.

    1982-09-15

    A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  6. Voltage Controller

    NASA Technical Reports Server (NTRS)

    1997-01-01

    Power Efficiency Corporation, specifically formed to manufacture and develop products from NASA technology, has a license to a three-phase power factor controller originally developed by Frank Nola, an engineer at Marshall Space Flight Center. Power Efficiency and two major distributors, Performance Control and Edison Power Technologies, use the electronic control boards to assemble three different motor controllers: Power Commander, Performance Controller, and Energy Master. The company Power Factor Controller reduces excessive energy waste in AC induction motors. It is used in industries and applications where motors operate under variable loads, including elevators and escalators, machine tools, intake and exhaust fans, oil wells, conveyors, pumps, die casting, and compressors. Customer lists include companies such as May Department Stores, Caesars Atlantic City, Ford Motors, and American Axle.

  7. Toroidal-Core Microinductors Biased by Permanent Magnets

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo; Blaes, Brent

    2003-01-01

    The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current

  8. Multipeak self-biased magnetoelectric coupling characteristics in four-phase Metglas/Terfenol-D/Be-bronze/PMN-PT structure

    NASA Astrophysics Data System (ADS)

    Huang, Dongyan; Lu, Caijiang; Bing, Han

    2015-04-01

    This letter develops a self-biased magnetoelectric (ME) structure Metglas/Terfenol-D/Be-bronze/PMN-PT (MTBP) consisting of a magnetization-graded Metglas/Terfenol-D layer, a elastic Be-bronze plate, and a piezoelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) plate. By using the magnetization-graded Metglas/Terfenol-D layer and the elastic Be-bronze plate, multi-peak self-biased ME responses are obtained in MTBP structure. The experimental results show that the MTBP structure with two layers of Metglas foil has maximum zero-biased ME voltage coefficient (MEVC). As frequency increases from 0.5 to 90 kHz, eleven large peaks of MEVC with magnitudes of 0.75-33 V/(cm Oe) are observed at zero-biased magnetic field. The results demonstrate that the proposed multi-peak self-biased ME structure may be useful for multifunctional devices such as multi-frequency energy harvesters or low-frequency ac magnetic field sensors.

  9. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  10. Electrical safety for high voltage arrays

    NASA Technical Reports Server (NTRS)

    Marshall, N. A.

    1983-01-01

    A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.

  11. Response of dairy cattle to transient voltages and magnetic fields

    SciTech Connect

    Reinemann, D.J.; Laughlin, N.K.; Stetson, L.E.

    1995-07-01

    Stray voltages in dairy facilities have been studied since the 1970`s. Previous research using steady-state ac and dc voltages has defined cow-contact voltage levels which may cause behavior and associated production problems. This research was designed to address concerns over possible effects of transient voltages and magnetic fields on dairy cows. Dairy cows response to transient voltages and magnetic fields was measured. The waveforms of the transient voltages applied were: 5 cycles of 60-Hz ac with a total pulse time of 83 ms, 1 cycle of 60-Hz ac with a total pulse time of 16 ms, and 1 cycle of an ac square wave (spiking positive and negative) of 2-ms duration. Alternating magnetic fields were produced by passing 60-Hz ac fundamental frequency with 2nd and 3rd harmonic and random noise components in metal structures around the cows. The maximum magnetic field associated with this current flow was in excess of 4 G. A wide range of sensitivity to transient voltages was observed among cows. Response levels from 24 cows to each transient exposure were normally distributed. No responses to magnetic fields were observed.

  12. High sensitivity zero-biased magnetic field sensor based on multiphase laminate heterostructures with FeCuNbSiB nanocrystalline soft magnetic alloy

    NASA Astrophysics Data System (ADS)

    Qiu, Jing; Wen, Yumei; Li, Ping; Chen, Hengjia

    2016-05-01

    In this paper, a high sensitivity zero-biased magnetic field sensor based on multiphase laminate heterostructures consisting of FeCuNbSiB/Terfenol-D (Tb1-xDyxFe2)/PZT (Pb(Zr1-x,Tix)O3)/Terfenol-D/PZT/Ternol-D/FeCuNbSiB (FMPMPMF) is presented, whose ME coupling characteristics and sensing performances have been investigated. Compared to traditional Terfenol-D/PZT/Terfenol-D (MPM) and Terfenol-D/PZT/Terfenol-D/PZT/Terfenol-D (MPMPM) sensors, the zero-biased ME coupling characteristics of FMPMPMF sensor were significantly improved, owing to a build-in magnetic field in FeCuNbSiB/Terfenol-D layers. The optimum zero-biased resonant ME voltage coefficient of 3.02 V/Oe is achieved, which is 1.65 times as great as that of MPMPM and 2.51 times of MPM sensors. The mean value of low-frequency ME field coefficient of FMPMPMF reaches 122.53 mV/cm Oe, which is 2.39 times as great as that of MPMPM and 1.79 times of MPM sensors. Meanwhile, the induced zero-biased ME voltage of FMPMPMF sensor shows an excellent linear relationship to ac magnetic field both at the low frequency (1 kHz) and the resonant frequency (106.6 kHz). Remarkably, it indicates that the proposed zero-biased magnetic field sensor give the prospect of being able to applied to the field of highly sensitive ac magnetic field sensing.

  13. System and method for determining stator winding resistance in an AC motor using motor drives

    DOEpatents

    Lu, Bin; Habetler, Thomas G; Zhang, Pinjia

    2013-02-26

    A system and method for determining the stator winding resistance of AC motors is provided. The system includes an AC motor drive having an input connectable to an AC source and an output connectable to an input terminal of an AC motor, a pulse width modulation (PWM) converter having switches therein to control current flow and terminal voltages in the AC motor, and a control system connected to the PWM converter. The control system generates a command signal to cause the PWM converter to control an output of the AC motor drive corresponding to an input to the AC motor, selectively generates a modified command signal to cause the PWM converter to inject a DC signal into the output of the AC motor drive, and determines a stator winding resistance of the AC motor based on the DC signal of at least one of the voltage and current.

  14. Non-contact current and voltage sensor

    DOEpatents

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  15. Recovery of consciousness in broilers following combined dc and ac stunning

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Broilers in the United States are typically electrically stunned using low voltage-high frequency pulsed DC water bath stunners and in the European Union broilers are electrocuted using high voltage-low frequency AC. DC stunned broilers regain consciousness in the absence of exsanguination and AC st...

  16. Power factor control system for AC induction motors

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1977-01-01

    A power factor control system for use with ac induction motors was designed which samples lines voltage and current through the motor and decreases power input to the motor proportional to the detected phase displacement between current and voltage. This system provides, less power to the motor, as it is less loaded.

  17. Enhancement of adhesion by a transition layer: Deposition of a-C film on ultrahigh molecular weight polyethylene (UHMWPE) by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    He, F. F.; Bai, W. Q.; Li, L. L.; Wang, X. L.; Xie, Y. J.; Jin, G.; Tu, J. P.

    2016-02-01

    An amorphous carbon (a-C) film is deposited on the plasma-treated UHMWPE substrate using a closed field unbalanced magnetron sputtering to improve its tribological properties. During the plasma treatment period, a transition layer is prepared by high energy ion bombardment at a bias voltage of -500 V to enhance the adhesion between the a-C film and the substrate. The mechanical and tribological properties of the a-C film were evaluated by nano-indentation and ball-on-disk tribometer. After deposition of a-C film with a thickness 900 nm, the nano-hardness of UHMWPE significantly increases from 47 MPa to 720 MPa and the wear rate decreases from 9.82 × 10-15 m3 N-1 m-1 to 4.78 × 10-15 m3 N-1 m-1 in bovine calf serum solution. The formation of the transition layer is believed to be the reason why the vertical adhesion between the a-C film and the UHMWPE substrate is enhanced.

  18. A single-phase embedded Z-source DC-AC inverter.

    PubMed

    Kim, Se-Jin; Lim, Young-Cheol

    2014-01-01

    In the conventional DC-AC inverter consisting of two DC-DC converters with unipolar output capacitors, the output capacitor voltages of the DC-DC converters must be higher than the DC input voltage. To overcome this weakness, this paper proposes a single-phase DC-AC inverter consisting of two embedded Z-source converters with bipolar output capacitors. The proposed inverter is composed of two embedded Z-source converters with a common DC source and output AC load. Though the output capacitor voltages of the converters are relatively low compared to those of a conventional inverter, an equivalent level of AC output voltages can be obtained. Moreover, by controlling the output capacitor voltages asymmetrically, the AC output voltage of the proposed inverter can be higher than the DC input voltage. To verify the validity of the proposed inverter, experiments were performed with a DC source voltage of 38 V. By controlling the output capacitor voltages of the converters symmetrically or asymmetrically, the proposed inverter can produce sinusoidal AC output voltages. The experiments show that efficiencies of up to 95% and 97% can be achieved with the proposed inverter using symmetric and asymmetric control, respectively. PMID:25133241

  19. A Single-Phase Embedded Z-Source DC-AC Inverter

    PubMed Central

    Kim, Se-Jin; Lim, Young-Cheol

    2014-01-01

    In the conventional DC-AC inverter consisting of two DC-DC converters with unipolar output capacitors, the output capacitor voltages of the DC-DC converters must be higher than the DC input voltage. To overcome this weakness, this paper proposes a single-phase DC-AC inverter consisting of two embedded Z-source converters with bipolar output capacitors. The proposed inverter is composed of two embedded Z-source converters with a common DC source and output AC load. Though the output capacitor voltages of the converters are relatively low compared to those of a conventional inverter, an equivalent level of AC output voltages can be obtained. Moreover, by controlling the output capacitor voltages asymmetrically, the AC output voltage of the proposed inverter can be higher than the DC input voltage. To verify the validity of the proposed inverter, experiments were performed with a DC source voltage of 38 V. By controlling the output capacitor voltages of the converters symmetrically or asymmetrically, the proposed inverter can produce sinusoidal AC output voltages. The experiments show that efficiencies of up to 95% and 97% can be achieved with the proposed inverter using symmetric and asymmetric control, respectively. PMID:25133241

  20. Low Voltage Spatial Light Modulator

    SciTech Connect

    Papavasiliou, A

    2003-02-19

    This project studied the feasibility of a Low-Voltage actuator technology that promises to reduce the switched voltage requirements and linearize the response of spatial light modulators. We created computer models that demonstrate substantial advantages offered by this technology, and fabricated and tested those devices. SLMs are electro-optic devices for modulating the phase, amplitude or angle of light beams, laser or other. Applications for arrays of SLMs include turbulence correction for high-speed optical communications, imaging through distorting media, input devices for holographic memories, optical manipulation of DNA molecules, and optical computers. Devices based on micro electro-mechanical systems (MEMS) technology have recently become of special interest because of their potential for greatly improved performance at a much lower cost than piezoelectric or liquid crystal based devices. The new MEMS-based SLM devices could have important applications in high-speed optical communication and remote optical sensing, in support of DoD and DOE missions. Virtually all previously demonstrated MEMS SLMs are based on parallel-plate capacitors where an applied voltage causes a mirror attached to a suspended electrode to move towards a fixed electrode. They require relatively high voltages, typically on the order of 100 V, resulting in (1) large transistor sizes, available only from specialized foundries at significant cost and limiting the amount/sophistication of electronics under each SLM pixel, and (2) large power dissipation/area, resulting in a heat removal issue because of the optical precision required ({approx} 1/50-th of a wavelength). The actuator described in this process uses an advanced geometry that was invented at LLNL and is currently still proprietary. The new geometry allows the application of a bias voltage. This applied bias voltage results in a reduction of the required switched voltage and a linearization of the response curve. When this

  1. Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

    DOEpatents

    Gallegos-Lopez, Gabriel; Nagashima, James M.; Perisic, Milun; Hiti, Silva

    2012-02-14

    A system is provided for controlling two AC machines. The system comprises a DC input voltage source that provides a DC input voltage, a voltage boost command control module (VBCCM), a five-phase PWM inverter module coupled to the two AC machines, and a boost converter coupled to the inverter module and the DC input voltage source. The boost converter is designed to supply a new DC input voltage to the inverter module having a value that is greater than or equal to a value of the DC input voltage. The VBCCM generates a boost command signal (BCS) based on modulation indexes from the two AC machines. The BCS controls the boost converter such that the boost converter generates the new DC input voltage in response to the BCS. When the two AC machines require additional voltage that exceeds the DC input voltage required to meet a combined target mechanical power required by the two AC machines, the BCS controls the boost converter to drive the new DC input voltage generated by the boost converter to a value greater than the DC input voltage.

  2. Ac-dc converter firing error detection

    SciTech Connect

    Gould, O.L.

    1996-07-15

    Each of the twelve Booster Main Magnet Power Supply modules consist of two three-phase, full-wave rectifier bridges in series to provide a 560 VDC maximum output. The harmonic contents of the twelve-pulse ac-dc converter output are multiples of the 60 Hz ac power input, with a predominant 720 Hz signal greater than 14 dB in magnitude above the closest harmonic components at maximum output. The 720 Hz harmonic is typically greater than 20 dB below the 500 VDC output signal under normal operation. Extracting specific harmonics from the rectifier output signal of a 6, 12, or 24 pulse ac-dc converter allows the detection of SCR firing angle errors or complete misfires. A bandpass filter provides the input signal to a frequency-to-voltage converter. Comparing the output of the frequency-to-voltage converter to a reference voltage level provides an indication of the magnitude of the harmonics in the ac-dc converter output signal.

  3. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  4. High-output microwave detector using voltage-induced ferromagnetic resonance

    SciTech Connect

    Shiota, Yoichi Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2014-11-10

    We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

  5. Total dose performance of radiation hardened voltage regulators and references

    NASA Technical Reports Server (NTRS)

    McClure, S.; Gorelick, J.; Pease, R.; Rax, B.; Ladbury, R.

    2001-01-01

    Total dose test of commercially available radiation hardened bipolar voltage regulators and references show reduced sensitivity to dose rate and varying sensitivity to bias under pressure. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.

  6. AC Loss Measurements on a 2G YBCO Coil

    SciTech Connect

    Rey, Christopher M; Duckworth, Robert C; Schwenterly, S W

    2011-01-01

    The Oak Ridge National Laboratory (ORNL) is collaborating with Waukesha Electric Systems (WES) to continue development of HTS power transformers. For compatibility with the existing power grid, a commercially viable HTS transformer will have to operate at high voltages in the range of 138 kV and above, and will have to withstand 550-kV impulse voltages as well. Second-generation (2G) YBCO coated conductors will be required for an economically-competitive design. In order to adequately size the refrigeration system for these transformers, the ac loss of these HTS coils must be characterized. Electrical AC loss measurements were conducted on a prototype high voltage (HV) coil with co-wound stainless steel at 60 Hz in a liquid nitrogen bath using a lock-in amplifier technique. The prototype HV coil consisted of 26 continuous (without splice) single pancake coils concentrically centered on a stainless steel former. For ac loss measurement purposes, voltage tap pairs were soldered across each set of two single pancake coils so that a total of 13 separate voltage measurements could be made across the entire length of the coil. AC loss measurements were taken as a function of ac excitation current. Results show that the loss is primarily concentrated at the ends of the coil where the operating fraction of critical current is the highest and show a distinct difference in current scaling of the losses between low current and high current regimes.

  7. Universal dielectric loss in glass from simultaneous bias and microwave fields.

    PubMed

    Burin, Alexander L; Khalil, Moe S; Osborn, Kevin D

    2013-04-12

    We derive the ac dielectric loss in glasses due to resonant processes created by two-level systems and a swept electric field bias. It is shown that at sufficiently large ac fields and bias sweep rates, the nonequilibrium loss tangent created by the two fields approaches a universal maximum determined by the bare linear dielectric permittivity. In addition, this nonequilibrium loss tangent is derived for a range of bias sweep rates and ac amplitudes. A predicted loss function can be understood in a Landau-Zener theory and used to extract the two-level system density, dipole moment, and relaxation rate. PMID:25167300

  8. ACS Quicklook PDF products

    NASA Astrophysics Data System (ADS)

    Suchkov, Anatoly

    1999-12-01

    This report details the features of the ACS quicklook PDF products produced by the HST data pipeline. The requirements closely follow the design of paper products recommended by the Data Quality Committee, with appropriate changes required to fully support ACS.

  9. Voltage tunable dielectric properties of oxides at nanoscale: TiO2 and CeO2 as model systems

    NASA Astrophysics Data System (ADS)

    Prakash, T.; Tamil Selvan, A.; Suraiya Begum, S. N.

    2016-03-01

    Carrier transport through electrically active grain boundaries has been studied under biased condition using Solartron 1260 impedance/gain phase analyzer with an applied AC potential of 250 mV in the frequency range 1 Hz-1 MHz for nanocrystalline TiO2 and CeO2 as the model systems. Prior to the measurement both the materials were converted into cylindrical pellets with (8 mm diameter and 1 mm thick) by applying uni-axial pressure of 4 ton using a hydraulic press, then sintered at 300, 450 and 600 °C for 30 min for TiO2 sample and for the case of CeO2 it was done at 300, 600 and 900 °C for 30 min. Further, they were characterized using powder X-ray diffractometer (XRD) and transmission electron microscopy (TEM) to know the crystal structure, average crystallite size and morphology. The impedance measurements were performed at room temperature under applied DC bias voltages from 0 to 3 V in the periodic increment of 0.2 V. The observed applied bias voltage effect on dielectric constant of both the systems was analyzed with 'grain boundary double Schottky potential barrier height model' for different grain sizes. The percentage of voltage tunable dielectric constant (T%) as a function of frequency was estimated for all the grain sizes and it was found to be increase with reduction of grain size. Our experimental findings reveal the possibilities of utilizing these nanocrystals as a potential active material for phased array antenna since both the samples exhibits T% = 85% at 100 Hz frequency.

  10. Model for excess noise in voltage-biased superconducting bolometers.

    PubMed

    Gildemeister, J M; Lee, A T; Richards, P L

    2001-12-01

    We are developing superconducting transition-edge bolometers for far-infrared and millimeter wavelengths. The bolometers described here are suspended by thin legs of silicon nitride for thermal isolation. At frequencies between 200 mHz and 10-50 Hz these devices show white noise at their thermal fluctuation limit (NEP approximately 10(-17) W/ radicalHz). At higher frequencies a broad peak appears in the noise spectrum, which we attribute to a combination of thermal fluctuations in complex thermal circuits and electrothermal feedback. Detailed noise calculations fit the noise measured in three different devices that were specifically designed to test the model. We discuss how changes in bolometer materials can shift the noise peak above the frequency range of interest for most applications. PMID:18364926

  11. Dynamical Coulomb blockade of tunnel junctions driven by alternating voltages

    NASA Astrophysics Data System (ADS)

    Grabert, Hermann

    2015-12-01

    The theory of the dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that, for standard setups where an external voltage is applied to a tunnel junction via an impedance, time-dependent driving entails an excitation of the modes of the electromagnetic environment by the applied voltage. Previous approaches for ac driven circuits need to be extended to account for the driven bath modes. A unitary transformation involving also the variables of the electromagnetic environment is introduced which allows us to split off the time dependence from the Hamiltonian in the absence of tunneling. This greatly simplifies perturbation-theoretical calculations based on treating the tunneling Hamiltonian as a perturbation. In particular, the average current flowing in the leads of the tunnel junction is studied. Explicit results are given for the case of an applied voltage with a constant dc part and a sinusoidal ac part. The connection with standard dynamical Coulomb blockade theory for constant applied voltage is established. It is shown that an alternating voltage source reveals significant additional effects caused by the electromagnetic environment. The hallmark of the dynamical Coulomb blockade in ac driven devices is a suppression of higher harmonics of the current by the electromagnetic environment. The theory presented basically applies to all tunneling devices driven by alternating voltages.

  12. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    DOEpatents

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  13. HIGH VOLTAGE GENERATOR

    DOEpatents

    Zito, G.V.

    1959-04-21

    This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

  14. Bias in Mental Tests.

    ERIC Educational Resources Information Center

    Bond, Lloyd

    1981-01-01

    While some forms of test bias (for example, bias in selection and prediction) appear amenable to definitional consensus, a definition of cultural bias will remain problematic so long as it is confused with the nature/nurture issue. (Author/BW)

  15. Demonstrating the Correspondence Bias

    ERIC Educational Resources Information Center

    Howell, Jennifer L.; Shepperd, James A.

    2011-01-01

    Among the best-known and most robust biases in person perception is the correspondence bias--the tendency for people to make dispositional, rather than situational, attributions for an actor's behavior. The correspondence bias appears in virtually every social psychology textbook and in many introductory psychology textbooks, yet the authors'…

  16. Bias in Grading

    ERIC Educational Resources Information Center

    Malouff, John

    2008-01-01

    Bias in grading can be conscious or unconscious. The author describes different types of bias, such as those based on student attractiveness or performance in prior courses, and a variety of methods of reducing bias, including keeping students anonymous during grading and using detailed criteria for subjective grading.

  17. Recalibrating Academic Bias

    ERIC Educational Resources Information Center

    Yancey, George

    2012-01-01

    Whether political and/or religious academic bias exists is a question with important ramifications for the educational institutions. Those arguing for the presence of such bias contend that political conservatives and the highly religious in academia are marginalized and face discrimination. The question of academic bias tends to be cast in a…

  18. Local Voltage Support from Distributed Energy Resources to Prevent Air Conditioner Motor Stalling

    SciTech Connect

    Baone, Chaitanya A; Xu, Yan; Kueck, John D

    2010-01-01

    Microgrid voltage collapse often happens when there is a high percentage of low inertia air-conditioning (AC) motors in the power systems. The stalling of the AC motors results in Fault Induced Delayed Voltage Recovery (FIDVR). A hybrid load model including typical building loads, AC motor loads, and other induction motor loads is built to simulate the motoring stalling phenomena. Furthermore, distributed energy resources (DE) with local voltage support capability are utilized to boost the local bus voltage during a fault, and prevent the motor stalling. The simulation results are presented. The analysis of the simulation results show that local voltage support from multiple DEs can effectively and economically solve the microgrid voltage collapse problem.

  19. Fast-Recovery, High-Voltage Power Diode

    NASA Technical Reports Server (NTRS)

    Sundberg, G.; Berman, A.; Balodis, V.; Gaugh, C.; Duffin, J.; Karatnicki, H.; Larson, E.

    1985-01-01

    New family of fast-recovery high-voltage power diodes compatible with D60T and D7ST transistors developed. Have wide range of applications in spacecraft and aircraft electrical distribution equipment, dc/dc inverters, and ac motor controllers for high-horsepower electric motors operating from 480-volt ac lines. Fast-Recovery 1,200-V Power Diodes use chip of hexagonal geometry to maximize effective silicon area.

  20. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

    DOE PAGESBeta

    Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

    2014-11-18

    We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states,more » while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.« less

  1. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

    SciTech Connect

    Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

    2014-11-18

    We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states, while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.

  2. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  3. Procedures used in the calibration of AC calibrators

    SciTech Connect

    Salazar, M.T.

    1991-02-01

    This report describes an automatic calibration system used in the calibration of all precision AC calibrators. The system includes an AC-DC Transfer Standard, a DC Voltage Standard, and a high-resolution digital multimeter, with an IBM-XT Personal Computer for data acquisition and analysis. Specialized instrumentation and measurement techniques make it possible to achieve high accuracy measurements with repeatability. 5 refs., 3 figs.

  4. Queries for Bias Testing

    NASA Technical Reports Server (NTRS)

    Gordon, Diana F.

    1992-01-01

    Selecting a good bias prior to concept learning can be difficult. Therefore, dynamic bias adjustment is becoming increasingly popular. Current dynamic bias adjustment systems, however, are limited in their ability to identify erroneous assumptions about the relationship between the bias and the target concept. Without proper diagnosis, it is difficult to identify and then remedy faulty assumptions. We have developed an approach that makes these assumptions explicit, actively tests them with queries to an oracle, and adjusts the bias based on the test results.

  5. Random telegraphic voltage noise due to thermal bi-stability in a superconducting weak link

    NASA Astrophysics Data System (ADS)

    Biswas, Sourav; Kumar, Nikhil; Winkelmann, C. B.; Courtois, Herve; Gupta, Anjan K.

    2016-05-01

    We investigated the random telegraphic voltage noise signal in the hysteretic bi-stable state of a superconducting weak link device. Fluctuation induced random switching between zero voltage state and non-zero-voltage state gives rise to a random telegraphic voltage signal in time domain. This telegraphic noise is used to find the mean lifetime of each of the two states. The mean life time in the zero voltage state is found to decrease with increasing bias current while that of resistive state increases and thus the two cross at certain bias current. We qualitatively discuss this observed switching behavior as arising from the bi-stable nature.

  6. Renormalized halo bias

    SciTech Connect

    Assassi, Valentin; Baumann, Daniel; Green, Daniel; Zaldarriaga, Matias E-mail: dbaumann@damtp.cam.ac.uk E-mail: matiasz@ias.edu

    2014-08-01

    This paper provides a systematic study of renormalization in models of halo biasing. Building on work of McDonald, we show that Eulerian biasing is only consistent with renormalization if non-local terms and higher-derivative contributions are included in the biasing model. We explicitly determine the complete list of required bias parameters for Gaussian initial conditions, up to quartic order in the dark matter density contrast and at leading order in derivatives. At quadratic order, this means including the gravitational tidal tensor, while at cubic order the velocity potential appears as an independent degree of freedom. Our study naturally leads to an effective theory of biasing in which the halo density is written as a double expansion in fluctuations and spatial derivatives. We show that the bias expansion can be organized in terms of Galileon operators which aren't renormalized at leading order in derivatives. Finally, we discuss how the renormalized bias parameters impact the statistics of halos.

  7. Voltage Quench Dynamics of a Kondo System.

    PubMed

    Antipov, Andrey E; Dong, Qiaoyuan; Gull, Emanuel

    2016-01-22

    We examine the dynamics of a correlated quantum dot in the mixed valence regime. We perform numerically exact calculations of the current after a quantum quench from equilibrium by rapidly applying a bias voltage in a wide range of initial temperatures. The current exhibits short equilibration times and saturates upon the decrease of temperature at all times, indicating Kondo behavior both in the transient regime and in the steady state. The time-dependent current saturation temperature connects the equilibrium Kondo temperature to a substantially increased value at voltages outside of the linear response. These signatures are directly observable by experiments in the time domain. PMID:26849606

  8. Fluid simulation of the bias effect in inductive/capacitive discharges

    SciTech Connect

    Zhang, Yu-Ru; Gao, Fei; Li, Xue-Chun; Wang, You-Nian; Bogaerts, Annemie

    2015-11-15

    Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.

  9. Preventing Delayed Voltage Recovery with Voltage-Regulating Distributed Energy Resources

    SciTech Connect

    Adhikari, Sarina; Li, Fangxing; Li, Huijuan; Xu, Yan; Kueck, John D; Rizy, D Tom

    2009-01-01

    With the large use of residential air conditioner (A/C) motors during the summer peaks, the potential of motor stalling events have increased in the recent years. The stalled motor loads have been found to be the most important cause of delayed voltage recovery following severe system disturbances, such as a subtransmission fault. The proper modeling of the stalled motors is a very important factor in identifying the effect of these motors in voltage recovery after the fault. This paper presents a methodology for modeling the stalled low inertia induction motors based on a sample utility system and a small primary distribution circuit. The prevention of the stalling of motors plays an important role in maintaining the voltage profile of the system after system disturbances. Distributed Energy Resource (DER) is used to prevent the motor stalling events so that the delayed voltage recovery of the system may be avoided.

  10. Biasing a ferronematic - a new way to detect weak magnetic field.

    PubMed

    Tomašovičová, Natália; Kováč, Jozef; Raikher, Yuriy; Éber, Nándor; Tóth-Katona, Tibor; Gdovinová, Veronika; Jadżyn, Jan; Pinčák, Richard; Kopčanský, Peter

    2016-06-29

    The magnetic properties of a ferronematic, i.e., a nematic liquid crystal doped with magnetic nanoparticles in low volume concentration are studied, with the focus on the ac magnetic susceptibility. A weak dc bias magnetic field (a few Oe) applied to the ferronematic in its isotropic phase increases the ac magnetic susceptibility considerably. Passage of the isotropic-to-nematic phase transition resets this enhancement irreversibly (unless the dc bias field is applied again in the isotropic phase). PMID:27296792

  11. Automatic voltage imbalance detector

    DOEpatents

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  12. Mixed voltage VLSI design

    NASA Technical Reports Server (NTRS)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  13. The EP-4(0) shielding kits: a new approach to protection from induced voltage

    SciTech Connect

    Vorob'ev, A. Yu.; Otmorskii, S. G.; Smekalov, V. V.; Gorozhankina, E. N.; Sosunov, N. N.; Bol'shunov, A. M.

    2011-09-15

    Problems of safety in work on overhead power lines and the overhead railroad ac contact network under induced voltages are considered. The use of additional individual protection systems is proposed to provide protection from electric shock during such work.

  14. ac electroosmosis in rectangular microchannels.

    PubMed

    Campisi, Michele; Accoto, Dino; Dario, Paolo

    2005-11-22

    Motivated by the growing interest in ac electroosmosis as a reliable no moving parts strategy to control fluid motion in microfluidic devices for biomedical applications, such as lab-on-a-chip, we study transient and steady-state electrokinetic phenomena (electroosmosis and streaming currents) in infinitely extended rectangular charged microchannels. With the aid of Fourier series and Laplace transforms we provide a general formal solution of the problem, which is used to study the time-dependent response to sudden ac applied voltage differences in case of finite electric double layer. The Debye-Huckel approximation has been adopted to allow for an algebraic solution of the Poisson-Boltzmann problem in Fourier space. We obtain the expressions of flow velocity profiles, flow rates, streaming currents, as well as expressions of the complex hydraulic and electrokinetic conductances. We analyze in detail the dependence of the electrokinetic conductance on the extension of linear dimensions relative to the Debye length, with an eye on finite electric double layer effects. PMID:16351310

  15. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  16. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  17. Common-Mode Voltage Characteristics of Matrix Converter According to PWM Method

    NASA Astrophysics Data System (ADS)

    Hara, Hidenori; Yamamoto, Eiji; Yamada, Kenji; Yamanaka, Katsutoshi; Zenke, Michihiko; Kang, Jun-Koo; Kume, Tsuneo Joe

    The matrix converter (MxC) is an ac-to-ac conversion device that can generate variable magnitude variable frequency output voltage. Nine bi-directional switches of MxC allow PWM control of output voltages and input currents. PWM switching needs “switch commutations” from one switch to another. During the switch commutations, however, unwanted voltage error occurs similar to the dead time effects in Voltage Source Inverter (VSI). When PWM pulse width is narrower than the time required for the commutation, voltage error increases rapidly. This voltage distortion is critical in the low speed operation as system becomes sensitive to even a small voltage error. In this paper, a new PWM strategy is proposed for improving voltage control performance in the low voltage region. Based on the input and output voltage information, PWM pulse-widths are controlled to avoid incomplete commutations. The feasibility of the proposed method is proved by simulation and experimental results. In addition, common mode voltage characteristics of MxC are discussed. Common-mode voltage and dv/dt cause motor bearing and ground leakage currents through the parasitic capacitances. Leakage current creates noise problems that can interfere with other equipment. Common-mode voltage characteristics of MxC are presented and discussed using two PWM methods. Simulated and experimental results are presented. Common-mode voltage of two-level VSI and MxC are also compared.

  18. Lagrangian bias in the local bias model

    SciTech Connect

    Frusciante, Noemi; Sheth, Ravi K. E-mail: sheth@ictp.it

    2012-11-01

    It is often assumed that the halo-patch fluctuation field can be written as a Taylor series in the initial Lagrangian dark matter density fluctuation field. We show that if this Lagrangian bias is local, and the initial conditions are Gaussian, then the two-point cross-correlation between halos and mass should be linearly proportional to the mass-mass auto-correlation function. This statement is exact and valid on all scales; there are no higher order contributions, e.g., from terms proportional to products or convolutions of two-point functions, which one might have thought would appear upon truncating the Taylor series of the halo bias function. In addition, the auto-correlation function of locally biased tracers can be written as a Taylor series in the auto-correlation function of the mass; there are no terms involving, e.g., derivatives or convolutions. Moreover, although the leading order coefficient, the linear bias factor of the auto-correlation function is just the square of that for the cross-correlation, it is the same as that obtained from expanding the mean number of halos as a function of the local density only in the large-scale limit. In principle, these relations allow simple tests of whether or not halo bias is indeed local in Lagrangian space. We discuss why things are more complicated in practice. We also discuss our results in light of recent work on the renormalizability of halo bias, demonstrating that it is better to renormalize than not. We use the Lognormal model to illustrate many of our findings.

  19. Primary measurement of total ultrasonic power with improved accuracy in rf voltage measurement.

    PubMed

    Dubey, P K; Kumar, Ashok; Kumar, Yudhisther; Gupta, Reeta; Joshi, Deepa

    2010-10-01

    Out of the various existing ultrasonic power measurement techniques, the radiation force balance method using microbalance is most widely used in low power (below 1 W) regime. The major source of uncertainty associated with this technique is the error in ac voltage measurement applied to the transducer for the generation of ultrasonic waves. The sources that deteriorate the ac voltage measurement accuracy include cable length and impedance mismatch. We introduce a new differential peak to peak measurement approach to reduce the ac voltage measurement error. The method holds the average peak amplitude of each polarity. Ultralow offset difference amplifier is used to measure peak to peak voltage. The method is insensitive to the variations in the dc offset of the source. The functionality of this method has been tested and compared with the conventional rf voltage measurement method. The output of this proposed technique is dc, which can be measured with an error of less than 0.1%. PMID:21034111

  20. System and method for determining stator winding resistance in an AC motor

    DOEpatents

    Lu, Bin; Habetler, Thomas G.; Zhang, Pinjia; Theisen, Peter J.

    2011-05-31

    A system and method for determining stator winding resistance in an AC motor is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of an AC motor. The circuit includes at least one contactor and at least one switch to control current flow and terminal voltages in the AC motor. The system also includes a controller connected to the circuit and configured to modify a switching time of the at least one switch to create a DC component in an output of the system corresponding to an input to the AC motor and determine a stator winding resistance of the AC motor based on the injected DC component of the voltage and current.

  1. Integrated Bypass Battery for ReverseBias Protection

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A,

    2002-01-01

    When a single solar cell of a series-connect string is placed in shadow, the entire array current is forced through that cell in reverse bias. Reverse bias current can lead to "hot-spot" heating, where the power produced by the unshadowed cells is dissipated as heat in the shadowed cell. Since occasional shadows are unavoidable in most applications, most solar arrays include shadow protection to prevent damage. In current practice, shadow protection is done with a "bypass diode" on each cell, to shunt the reverse bias current if a cell is shadowed. A new method of reverse bias protection is to use an Integral thin-film battery to provide voltage in the case of a shadowed cell. In this case, the shadowed cell continues to provide voltage during the transient shadow.

  2. Tracking MOV operability under degraded voltage condition by periodic test measurements

    SciTech Connect

    Hussain, B.; Behera, A.K.; Alsammarae, A.J.

    1996-12-31

    The purpose of this paper is to develop a methodology for evaluating the operability of Alternating Current (AC) Motor Operated Valve (MOV) under degraded voltage condition, based on the seating parameter measured during surveillance/testing. This approach will help resolve Nuclear Regulatory Commission`s (NRC`s) concern on verifying the AC MOV`s design basis capability through periodic testing.

  3. Voltage control of cavity magnon polariton

    NASA Astrophysics Data System (ADS)

    Kaur, S.; Yao, B. M.; Rao, J. W.; Gui, Y. S.; Hu, C.-M.

    2016-07-01

    We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

  4. Microwave integrated circuit for Josephson voltage standards

    NASA Technical Reports Server (NTRS)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  5. Exchange anisotropy determined by magnetic field dependence of ac susceptibility

    NASA Astrophysics Data System (ADS)

    Rodríguez-Suárez, R. L.; Vilela Leão, L. H.; de Aguiar, F. M.; Rezende, S. M.; Azevedo, A.

    2003-10-01

    ac susceptibility measurements of ferromagnetic/antiferromagnetic (FM/AF) bilayers are usually performed as a function of the temperature. In this work we describe measurements of transverse biased ac susceptibility (χt) of FM/AF bilayers as a function of the applied magnetic field H0. The measurements were carried out at room temperature by means of an ac magneto-optical Kerr effect susceptometer. The χt-1(H0) dependence, at the saturation magnetization regime, exhibits a linear behavior with the applied field parallel and perpendicular to the exchange bias direction. The linear extrapolation of χt-1 versus H0 cuts the abscissa at asymmetrical values of field due to the exchange bias coupling. The inverse susceptibility is calculated in the saturation regime by a model, which takes into account the free energy of both layers plus a term corresponding to the interfacial coupling. The exchange coupling field (HE) and uniaxial anisotropy (HU) are extracted from the best fit to the experimental results. The results obtained are crosschecked by those obtained from ferromagnetic resonance (FMR) and dc magnetometry. The measurements of the exchange bias and the uniaxial field in all of the three analyzed bilayers gave values that are consistently lower when measured by FMR than those obtained by ac and dc magnetometry. It is argued that the apparently discrepant values of HE and HU, obtained by different techniques, might be explained by existence of unstable AF grains at the AF/FM interface.

  6. Variable-frequency inverter controls torque, speed, and braking in ac induction motors

    NASA Technical Reports Server (NTRS)

    Nola, F. J.

    1974-01-01

    Dc to ac inverter provides optimum frequency and voltage to ac induction motor, in response to different motor-load and speed requirements. Inverter varies slip frequency of motor in proportion to required torque. Inverter protects motor from high current surges, controls negative slip to apply braking, and returns energy stored in momentum of load to dc power source.

  7. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  8. Electrostatic turbulence intermittence driven by biasing in Texas Helimak

    SciTech Connect

    Toufen, D. L.; Pereira, F. A. C.; Guimarães-Filho, Z. O.; Caldas, I. L.; Gentle, K. W.

    2014-12-15

    We investigate changes in the intermittent sequence of bursts in the electrostatic turbulence due to imposed positive bias voltage applied to control the plasma radial electric field in Texas Helimak [K. W. Gentle and H. He, Plasma Sci. Technol. 10, 284 (2008)]—a toroidal plasma device with a one-dimensional equilibrium, magnetic curvature, and shear. We identify the burst characteristics by analyzing ion saturation current fluctuations collected in a large set of Langmuir probes. The number of bursts increase with positive biasing, giving rise to a long tailed skewed turbulence probability distribution function. The burst shape does not change much with the applied bias voltage, while their vertical velocity increases monotonically. For high values of bias voltage, the bursts propagate mainly in the vertical direction which is perpendicular to the radial density gradient and the toroidal magnetic field. Moreover, in contrast with the bursts in tokamaks, the burst velocity agrees with the phase velocity of the overall turbulence in both vertical and radial directions. For a fixed bias voltage, the time interval between bursts and their amplitudes follows exponential distributions. Altogether, these burst characteristics indicate that their production can be modelled by a stochastic process.

  9. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing.

    PubMed

    Patel, N; Branch, D W; Schamiloglu, E; Cular, S

    2015-08-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment. PMID:26329223

  10. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    NASA Astrophysics Data System (ADS)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  11. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    SciTech Connect

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  12. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    SciTech Connect

    Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

    2015-08-15

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  13. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    DOE PAGESBeta

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to bothmore » crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  14. Voltage induced reversible and irreversible change of magnetic coercivity in Co/ZnO heterostructure

    NASA Astrophysics Data System (ADS)

    Hsu, Chuan-Che; Chang, Po-Chun; Mudinepalli, Venkata Ramana; Hsieh, Tsung-Chun; Lo, Fang-Yuh; Lin, Wen-Chin

    2016-03-01

    In this study, the application of bias voltage to 4-8 nm Co/275 nm ZnO heterostructures changed the magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The magnetic coercivity (Hc) monotonically decreased 20% when the small voltages of 0-8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferromagnetic Co-oxide.

  15. Basic study of transient breakdown voltage in solid dielectric cables

    NASA Astrophysics Data System (ADS)

    Bahder, G.; Sosnowski, M.; Katz, C.

    1980-09-01

    A comprehensive review of the technical and scientific publications relating to crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR) insulated cables revealed that there is very little known with respect to the life expectancy, the final factory voltage test background and the mechanism of voltage breakdown of these cables. A new methodology for the investigation of breakdown voltages of XLPE and EPR insulated cables was developed which is based on the investigation of breakdown voltages at various voltage transients such as unipolarity pulses and dual-polarity pulses, and a.c. voltage at power and high frequency. Also, a new approach to statistical testing was developed which allows one to establish a correlation among the breakdown voltages obtained with various voltage transients. Finally, a method for the determination of threshold voltage regardless of the magnitude of apparent charge was developed. A model of breakdown and electrical aging of XLPE and EPR insulated cables was developed as well as life expectancy characteristics for high voltage stress XLPE insulated cables operated in a dry environment at room temperature and at 900 C.

  16. The AC clean-fog test for contaminated insulators

    SciTech Connect

    Cherney, E.A.; Beausejour, Y.; Cheng, T.C.; Lloyd, K.J.; Marrone, G.; Moran, J.H.; Naito, K.; Pargamin, L.

    1983-03-01

    The paper summarizes the results of clean-fog tests conducted by eleven task force laboratories on a common suspension insulator, IEEE insulator. The test series done according to a specific set of guidelines, show considerable dispersion in the fifty per cent flashover voltage between the laboratories. The significant parameters of the clean-fog method that influence the fifty per cent flashover voltage are discussed. More controls in testing are needed before the formalization of the clean-fog method as a standard contamination test for high voltage ac insulators can be made.

  17. Optical voltage reference

    DOEpatents

    Rankin, Richard; Kotter, Dale

    1994-01-01

    An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

  18. Optical voltage reference

    DOEpatents

    Rankin, R.; Kotter, D.

    1994-04-26

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  19. High-power ac/dc variable load simulator

    NASA Technical Reports Server (NTRS)

    Joncas, K. P.; Birnbach, S.; Bruce, L. D.; Smith, L.

    1975-01-01

    Design of medium-power dynamic electrical load simulator has been extended to permit simulation of ac as well as dc loads and to provide for operation at higher power levels. Simulator is internally protected against reverse voltage, overvoltage, overcurrent, and overload conditions.

  20. Novel dielectric reduces corona breakdown in ac capacitors

    NASA Technical Reports Server (NTRS)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  1. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect

    Wu, Tian-Li Groeseneken, Guido; Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Bakeroot, Benoit; Roelofs, Robin

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  2. Investigation of high voltage spacecraft system interactions with plasma environments

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.; Berkopec, F. D.; Purvis, C. K.; Grier, N.; Staskus, J.

    1978-01-01

    The exposure of high voltage spacecraft systems to the charged particle environment of space can produce interactions that will influence system operation. An experimental investigation of these interactions has been undertaken for insulator and conductor test surfaces biased up to plus or minus 1 kV in a simulated low earth orbit charged particle environment. It has been found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region; this can cause arcing. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

  3. A Hyperactive Transposase of the Maize Transposable Element Activator (Ac)

    PubMed Central

    Lazarow, Katina; Du, My-Linh; Weimer, Ruth; Kunze, Reinhard

    2012-01-01

    Activator/Dissociation (Ac/Ds) transposable elements from maize are widely used as insertional mutagenesis and gene isolation tools in plants and more recently also in medaka and zebrafish. They are particularly valuable for plant species that are transformation-recalcitrant and have long generation cycles or large genomes with low gene densities. Ac/Ds transposition frequencies vary widely, however, and in some species they are too low for large-scale mutagenesis. We discovered a hyperactive Ac transposase derivative, AcTPase4x, that catalyzes in the yeast Saccharomyces cerevisiae 100-fold more frequent Ds excisions than the wild-type transposase, whereas the reintegration frequency of excised Ds elements is unchanged (57%). Comparable to the wild-type transposase in plants, AcTPase4x catalyzes Ds insertion preferentially into coding regions and to genetically linked sites, but the mutant protein apparently has lost the weak bias of the wild-type protein for insertion sites with elevated guanine–cytosine content and nonrandom protein-DNA twist. AcTPase4x exhibits hyperactivity also in Arabidopsis thaliana where it effects a more than sixfold increase in Ds excision relative to wild-type AcTPase and thus may be useful to facilitate Ac/Ds-based insertion mutagenesis approaches. PMID:22562933

  4. Auto bias control and bias hold circuit for IQ-modulator in flexible optical QAM transmitter with Nyquist filtering.

    PubMed

    Kawakami, Hiroto; Kobayashi, Takayuki; Yoshida, Mitsuteru; Kataoka, Tomoyoshi; Miyamoto, Yutaka

    2014-11-17

    An Auto Bias Control (ABC) technique for the IQ-modulator of a flexible optical QAM transmitter is described. This technique can support various optical QAM signal formats with Nyquist filtering and electronic dispersion pre-compensation. 16, 32 and 64-QAM signals (21 Gbaud) are successfully generated, and all bias voltages are held to their optimum value even when signal format is changed. PMID:25402056

  5. The physics of positively biased conductors surrounded by dielectrics in contact with a plasma

    NASA Technical Reports Server (NTRS)

    Hastings, Daniel E.; Chang, Patrick

    1989-01-01

    The physics of a positively biased conductor surrounded by dielectrics in contact with plasma is investigated. It is shown that because of the presence of secondary emission from the surrounding dielectrics, the voltage of the surfaces near the conductor has three solutions. The high- and low-voltage solutions are stable, while the intermediate-voltage solution is unstable. This theory is applied to explain the snapover effect observed on high-voltage solar arrays that involve the use of highly biased surfaces in contact with the space environment.

  6. Zero Voltage Soft Switching Duty Cycle Pulse Modulated High Frequency Inverter-Fed

    NASA Astrophysics Data System (ADS)

    Ishitobi, Manabu; Matsushige, Takayuki; Nakaoka, Mutsuo; Bessyo, Daisuke; Omori, Hideki; Terai, Haruo

    The utility grid voltage of commercial AC power source in Japan and USA is 100V, but in other Asian and European countries, it is 220V. In recent years, in Japan 200V outputted single-phase three-wire system begins to be used for high power applications. In 100V utility AC power applications and systems, an active voltage clamped quasi-resonant inverter circuit topology sing IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped asymmetrical soft switching PWM high-frequency inverter type AC-DC converter using IGBTs which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. The zero voltage soft switching inverter treated here can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull (SEPP) type soft switching PWM inverter are evaluated and discussed for 100V and 200V common use consumer microwave oven. The harmonic line current components in the utility AC power side of the AC-DC power converter with ZVS-PWM SEPP inverter are reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

  7. Microfabricated AC impedance sensor

    DOEpatents

    Krulevitch, Peter; Ackler, Harold D.; Becker, Frederick; Boser, Bernhard E.; Eldredge, Adam B.; Fuller, Christopher K.; Gascoyne, Peter R. C.; Hamilton, Julie K.; Swierkowski, Stefan P.; Wang, Xiao-Bo

    2002-01-01

    A microfabricated instrument for detecting and identifying cells and other particles based on alternating current (AC) impedance measurements. The microfabricated AC impedance sensor includes two critical elements: 1) a microfluidic chip, preferably of glass substrates, having at least one microchannel therein and with electrodes patterned on both substrates, and 2) electrical circuits that connect to the electrodes on the microfluidic chip and detect signals associated with particles traveling down the microchannels. These circuits enable multiple AC impedance measurements of individual particles at high throughput rates with sufficient resolution to identify different particle and cell types as appropriate for environmental detection and clinical diagnostic applications.

  8. Effect of ordered array of magnetic dots on the dynamics of Josephson vortices in stacked SNS Josephson junctions under DC and AC current

    NASA Astrophysics Data System (ADS)

    Berdiyorov, Golibjon R.; Savel'ev, Sergey; Kusmartsev, Feodor V.; Peeters, François M.

    2015-11-01

    We use the anisotropic time-dependent Ginzburg-Landau theory to investigate the effect of a square array of out-of-plane magnetic dots on the dynamics of Josephson vortices (fluxons) in artificial stacks of superconducting-normal-superconducting (SNS) Josephson junctions in the presence of external DC and AC currents. Periodic pinning due to the magnetic dots distorts the triangular lattice of fluxons and results in the appearance of commensurability features in the current-voltage characteristics of the system. For the larger values of the magnetization, additional peaks appear in the voltage-time characteristics of the system due to the creation and annihilation of vortex-antivortex pairs. Peculiar changes in the response of the system to the applied current is found resulting in a "superradiant" vortex-flow state at large current values, where a rectangular lattice of moving vortices is formed. Synchronizing the motion of fluxons by adding a small ac component to the biasing dc current is realized. However, we found that synchronization becomes difficult for large magnetization of the dots due to the formation of vortex-antivortex pairs.

  9. AC power generation from microbial fuel cells

    NASA Astrophysics Data System (ADS)

    Lobo, Fernanda Leite; Wang, Heming; Forrestal, Casey; Ren, Zhiyong Jason

    2015-11-01

    Microbial fuel cells (MFCs) directly convert biodegradable substrates to electricity and carry good potential for energy-positive wastewater treatment. However, the low and direct current (DC) output from MFC is not usable for general electronics except small sensors, yet commercial DC-AC converters or inverters used in solar systems cannot be directly applied to MFCs. This study presents a new DC-AC converter system for MFCs that can generate alternating voltage in any desired frequency. Results show that AC power can be easily achieved in three different frequencies tested (1, 10, 60 Hz), and no energy storage layer such as capacitors was needed. The DC-AC converter efficiency was higher than 95% when powered by either individual MFCs or simple MFC stacks. Total harmonic distortion (THD) was used to investigate the quality of the energy, and it showed that the energy could be directly usable for linear electronic loads. This study shows that through electrical conversion MFCs can be potentially used in household electronics for decentralized off-grid communities.

  10. Power conditioning for low-voltage piezoelectric stack energy harvesters

    NASA Astrophysics Data System (ADS)

    Skow, E.; Leadenham, S.; Cunefare, K. A.; Erturk, A.

    2016-04-01

    Low-power vibration and acoustic energy harvesting scenarios typically require a storage component to be charged to enable wireless sensor networks, which necessitates power conditioning of the AC output. Piezoelectric beam-type bending mode energy harvesters or other devices that operate using a piezoelectric element at resonance produce high voltage levels, for which AC-DC converters and step-down DC-DC converters have been previously investigated. However, for piezoelectric stack energy harvesters operating off-resonance and producing low voltage outputs, a step-up circuit is required for power conditioning, such as seen in electromagnetic vibration energy scavengers, RF communications, and MEMS harvesters. This paper theoretically and experimentally investigates power conditioning of a low-voltage piezoelectric stack energy harvester.

  11. Biased predecision processing.

    PubMed

    Brownstein, Aaron L

    2003-07-01

    Decision makers conduct biased predecision processing when they restructure their mental representation of the decision environment to favor one alternative before making their choice. The question of whether biased predecision processing occurs has been controversial since L. Festinger (1957) maintained that it does not occur. The author reviews relevant research in sections on theories of cognitive dissonance, decision conflict, choice certainty, action control, action phases, dominance structuring, differentiation and consolidation, constructive processing, motivated reasoning, and groupthink. Some studies did not find evidence of biased predecision processing, but many did. In the Discussion section, the moderators are summarized and used to assess the theories. PMID:12848220

  12. Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

  13. Voltage-time Characteristics and Reliability Evaluation Method of Oil-filled Transformer for Non-effectively Grounded Voltage Class

    NASA Astrophysics Data System (ADS)

    Takami, Jun; Tsuboi, Toshihiro; Okabe, Shigemitsu

    The power frequency withstand voltage tests are specified on electric power equipment in JEC-0102 by evaluating the lifetime reliability with a Weibull distribution function. It may be applied on 66-154kV transformer for non-effectively grounded voltage class. The present paper describes the results that measured AC insulation characteristics (Voltage-time characteristics) and Weibull parameters for oil-filled transformer of 66-154kV class. These measurement parameters were compared with the conventional Weibull parameters, which were applied for oil-filled transformer of voltage class above 154kV. Furthermore the non-partial discharge test voltage was evaluated by trial calculations, using the parameters obtained this time or typical parameters.

  14. HIGH VOLTAGE REGULATOR

    DOEpatents

    Wright, B.T.

    1959-06-01

    A high voltage regulator for use with calutrons is described which rapidly restores accelerating voltage after a sudden drop such as is caused by sparking. The rapid restoration characteristic prevents excessive contamination of lighter mass receiver pockets by the heavier mass portion of the beam. (T.R.H.)

  15. 4-bit Bipolar Triangle Voltage Waveform Generator Using Single-Flux-Quantum Circuit

    NASA Astrophysics Data System (ADS)

    Watanabe, Tomoki; Takahashi, Yoshitaka; Shimada, Hiroshi; Maezawa, Masaaki; Mizugaki, Yoshinao

    SFQ digital-to-analog converters (DACs) are one of the candidates for AC voltage standards. We have proposed SFQ-DACs based on frequency modulation (FM). Bipolar output is required for applications of AC voltage standards, while our previous SFQ-DACs generated only positive voltages. In this paper, we present our design of a 4-bit bipolar triangle voltage waveform generator comprising an SFQ-DAC. The waveform generator has two output ports. Synthesized half-period waveforms are alternately generated in one of the output ports. The bipolar output is realized by observing the differential voltage between the ports. We confirmed a 72-μVPP bipolar triangle voltage waveform at the frequency of 35.7 Hz.

  16. AC magnetohydrodynamic microfluidic switch

    SciTech Connect

    Lemoff, A V; Lee, A P

    2000-03-02

    A microfluidic switch has been demonstrated using an AC Magnetohydrodynamic (MHD) pumping mechanism in which the Lorentz force is used to pump an electrolytic solution. By integrating two AC MHD pumps into different arms of a Y-shaped fluidic circuit, flow can be switched between the two arms. This type of switch can be used to produce complex fluidic routing, which may have multiple applications in {micro}TAS.

  17. ACS Symposium Support

    SciTech Connect

    Kenneth D. Jordan

    2010-02-20

    The funds from this DOE grant were used to help cover the travel costs of five students and postdoctoral fellows who attended a symposium on 'Hydration: From Clusters to Aqueous Solutions' held at the Fall 2007 American Chemical Society Meeting in Boston, MA, August 19-23. The Symposium was sponsored by the Physical Chemistry Division, ACS. The technical program for the meeting is available at http://phys-acs.org/fall2007.html.

  18. Voltage verification unit

    DOEpatents

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  19. Failure Modes during Low-Voltage Electrowetting.

    PubMed

    Mibus, Marcel; Hu, Xiaoyu; Knospe, Carl; Reed, Michael L; Zangari, Giovanni

    2016-06-22

    Low-voltage electrowetting devices allow significant contact angle changes below a 50 V bias; however, operation under prolonged cycling and failure modes have not yet been sufficiently elucidated. In this work, the failure modes and performance degradation of Cytop (23-210 nm)/aluminum oxide (15-44 nm) bilayers have been investigated. Contact angle and leakage current were measured during stepped voltage measurements up to failure, showing three electrowetting response regimes: ideal Young-Lippmann behavior, contact angle saturation, and dielectric breakdown. The onset of ionic conduction in aluminum oxide and the resulting breakdown control when the layer would ultimately fail, but the thickness of the Cytop layer determined the achievable contact angle versus voltage characteristics. Cyclic electrowetting measurements studied the repeatability of contact angle change using an applied voltage above or below the voltage drop needed for polymer breakdown (VT). Results show repeatable electrowetting below VT and a rapidly diminishing contact angle response above VT. The leakage current and injected charge cannot be used to comprehensively assess the stability of the system during operation. The contact potential difference measured with a Kelvin probe provides an alternative means of assessing the extent of the damage. PMID:27253515

  20. Electric voltage generation by antiferromagnetic dynamics

    NASA Astrophysics Data System (ADS)

    Yamane, Yuta; Ieda, Jun'ichi; Sinova, Jairo

    2016-05-01

    We theoretically demonstrate dc and ac electric voltage generation due to spin motive forces originating from domain wall motion and magnetic resonance, respectively, in two-sublattice antiferromagnets. Our theory accounts for the canting between the sublattice magnetizations, the nonadiabatic electron spin dynamics, and the Rashba spin-orbit coupling, with the intersublattice electron dynamics treated as a perturbation. This work suggests a way to observe and explore the dynamics of antiferromagnetic textures by electrical means, an important aspect in the emerging field of antiferromagnetic spintronics, where both manipulation and detection of antiferromagnets are needed.

  1. Harassment, Bias, and Discrimination.

    ERIC Educational Resources Information Center

    Welliver, Paul W.

    1995-01-01

    Discusses a new principle which has been added to the AECT (Association for Educational Communications and Technology) Code of Professional Ethics regarding discrimination, harassment, and bias. An example is presented which illustrates a violation of a professional colleague's rights. (LRW)

  2. Introduction to Unconscious Bias

    NASA Astrophysics Data System (ADS)

    Schmelz, Joan T.

    2010-05-01

    We all have biases, and we are (for the most part) unaware of them. In general, men and women BOTH unconsciously devalue the contributions of women. This can have a detrimental effect on grant proposals, job applications, and performance reviews. Sociology is way ahead of astronomy in these studies. When evaluating identical application packages, male and female University psychology professors preferred 2:1 to hire "Brian” over "Karen” as an assistant professor. When evaluating a more experienced record (at the point of promotion to tenure), reservations were expressed four times more often when the name was female. This unconscious bias has a repeated negative effect on Karen's career. This talk will introduce the concept of unconscious bias and also give recommendations on how to address it using an example for a faculty search committee. The process of eliminating unconscious bias begins with awareness, then moves to policy and practice, and ends with accountability.

  3. Estimating Bias Error Distributions

    NASA Technical Reports Server (NTRS)

    Liu, Tian-Shu; Finley, Tom D.

    2001-01-01

    This paper formulates the general methodology for estimating the bias error distribution of a device in a measuring domain from less accurate measurements when a minimal number of standard values (typically two values) are available. A new perspective is that the bias error distribution can be found as a solution of an intrinsic functional equation in a domain. Based on this theory, the scaling- and translation-based methods for determining the bias error distribution arc developed. These methods are virtually applicable to any device as long as the bias error distribution of the device can be sufficiently described by a power series (a polynomial) or a Fourier series in a domain. These methods have been validated through computational simulations and laboratory calibration experiments for a number of different devices.

  4. Political bias is tenacious.

    PubMed

    Ditto, Peter H; Wojcik, Sean P; Chen, Eric Evan; Grady, Rebecca Hofstein; Ringel, Megan M

    2015-01-01

    Duarte et al. are right to worry about political bias in social psychology but they underestimate the ease of correcting it. Both liberals and conservatives show partisan bias that often worsens with cognitive sophistication. More non-liberals in social psychology is unlikely to speed our convergence upon the truth, although it may broaden the questions we ask and the data we collect. PMID:26786070

  5. Inhibited pattern formation by asymmetrical high-voltage excitation in nematic fluids.

    PubMed

    Salamon, Péter; Éber, Nándor; Fekete, Balázs; Buka, Ágnes

    2014-08-01

    In contrast to the predictions of the standard theory of electroconvection (EC), our experiments showed that the action of superposed ac and dc voltages rather inhibits pattern formation than favors the emergence of instabilities; the patternless region may extend to much higher voltages than the individual ac or dc thresholds. The pattern formation induced by such asymmetrical voltage was explored in a nematic liquid crystal in a wide frequency range. The findings could be qualitatively explained for the conductive EC, but represent a challenging problem for the dielectric EC. PMID:25215747

  6. Local Dynamic Reactive Power for Correction of System Voltage Problems

    SciTech Connect

    Kueck, John D; Rizy, D Tom; Li, Fangxing; Xu, Yan; Li, Huijuan; Adhikari, Sarina; Irminger, Philip

    2008-12-01

    Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results

  7. A Simple Design Method Based on Vector Control of AC Machines with LC Filter

    NASA Astrophysics Data System (ADS)

    Saito, Ryosuke; Kubota, Hisao

    This paper presents a simple voltage control system of AC machines using PWM voltage source inverter with output LC filters. By assuming a motor as a current source, the voltage is controlled by a simple proportional differential (PD) control. The vector control and PD control can be separately controlled in this system. A method for disturbance rejection is also described. The effectiveness of the proposed method is verified by simulations and experiments.

  8. Reverse bias protected solar array with integrated bypass battery

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A (Inventor)

    2012-01-01

    A method for protecting the photovoltaic cells in a photovoltaic (PV) array from reverse bias damage by utilizing a rechargeable battery for bypassing current from a shaded photovoltaic cell or group of cells, avoiding the need for a bypass diode. Further, the method mitigates the voltage degradation of a PV array caused by shaded cells.

  9. Substation voltage upgrading

    SciTech Connect

    Panek, J.; Elahi, H.; Sublich, M. . Systems Development and Engineering Dept.)

    1989-08-01

    Substation voltage uprating, i.e., conversion of a substation from a lower rated voltage to a higher rated voltage without a complete substation rebuild, can lead to excellent economic benefits. Utilization of the old substation layout and/or the existing equipment, to some extent, is the practical objective of such an uprating. The objective of this project was to assess the opportunities for substation uprating in the industry, to establish feasibility for such uprating and to study methods for accomplishing it. The final aim of the project was to provide guidance to utilities interested in uprating. 56 refs., 41 figs., 18 tabs.

  10. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  11. Photocurrent-voltage relation of resonant tunneling diode photodetectors

    NASA Astrophysics Data System (ADS)

    Pfenning, Andreas; Hartmann, Fabian; Rebello Sousa Dias, Mariama; Langer, Fabian; Kamp, Martin; Castelano, Leonardo Kleber; Lopez-Richard, Victor; Marques, Gilmar Eugenio; Höfling, Sven; Worschech, Lukas

    2015-08-01

    We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV (V ) of the current-voltage curve, which depends strongly on the bias voltage V . A model is proposed describing ΔV (V ) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V ) , the lifetime of photogenerated and accumulated charge carriers τ(V ) , and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.

  12. Automatic Mode Switching Method for Torque Priority Control of IPMSM by Considering Voltage Saturation

    NASA Astrophysics Data System (ADS)

    Nakama, Takao; Hanada, Toshihiro; Ohishi, Kiyoshi; Makishima, Shingo; Uezono, Keiichi; Yasukawa, Shinobu

    This paper proposes a new current control method for interior permanent magnet synchronous motor (IPMSM). In the case of AC motor control, two axis current feedback control is performed to control the voltage amplitude and phase. When the inverter voltage is saturated, current control is achieved by controlling the voltage phase. Conventional techniques require switching the mode of the control system from variable-voltage mode to voltage-saturation mode. However, in conventional techniques, the transient voltage saturation occurs by switching the control system. The proposed method achieves the current control in variable voltage mode and voltage saturation mode without switching the control system. Moreover, the current response is not affected by the rotor speed. The numerical simulation results and experimental results confirm the effectiveness of proposed current control method.

  13. Growth of oxide exchange bias layers

    DOEpatents

    Chaiken, A.; Michel, R.P.

    1998-07-21

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

  14. Prediction Bias and Selection Bias: An Empirical Analysis.

    ERIC Educational Resources Information Center

    Cahan, Sorel; Gamliel, Eyal

    2001-01-01

    Proposed a definition of selection bias and studied the empirical relation between prediction bias and selection bias with respect to prominent social groups. Results show that, although the two biases are related, the relation is not isomorphic. It is mediated by the selection ratio, and for most selection ratios, it is only moderate. (SLD)

  15. Imaging voltage in neurons

    PubMed Central

    Peterka, Darcy S.; Takahashi, Hiroto; Yuste, Rafael

    2011-01-01

    In the last decades, imaging membrane potential has become a fruitful approach to study neural circuits, especially in invertebrate preparations with large, resilient neurons. At the same time, particularly in mammalian preparations, voltage imaging methods suffer from poor signal to noise and secondary side effects, and they fall short of providing single-cell resolution when imaging of the activity of neuronal populations. As an introduction to these techniques, we briefly review different voltage imaging methods (including organic fluorophores, SHG chromophores, genetic indicators, hybrid, nanoparticles and intrinsic approaches), and illustrate some of their applications to neuronal biophysics and mammalian circuit analysis. We discuss their mechanisms of voltage sensitivity, from reorientation, electrochromic or electro-optical phenomena, to interaction among chromophores or membrane scattering, and highlight their advantages and shortcomings, commenting on the outlook for development of novel voltage imaging methods. PMID:21220095

  16. High Voltage TAL Performance

    NASA Technical Reports Server (NTRS)

    Jacobson, David T.; Jankovsky, Robert S.; Rawlin, Vincent K.; Manzella, David H.

    2001-01-01

    The performance of a two-stage, anode layer Hall thruster was evaluated. Experiments were conducted in single and two-stage configurations. In single-stage configuration, the thruster was operated with discharge voltages ranging from 300 to 1700 V. Discharge specific impulses ranged from 1630 to 4140 sec. Thruster investigations were conducted with input power ranging from 1 to 8.7 kW, corresponding to power throttling of nearly 9: 1. An extensive two-stage performance map was generated. Data taken with total voltage (sum of discharge and accelerating voltage) constant revealed a decrease in thruster efficiency as the discharge voltage was increased. Anode specific impulse values were comparable in the single and two-stage configurations showing no strong advantage for two-stage operation.

  17. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  18. Review of biased solar arraay. Plasma interaction studies

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.

    1981-01-01

    The Solar Electric Propulsion System (SEPS) is proposed for a variety of space missions. Power for operating SEPS is obtained from large solar array wings capable of generating tens of kilowatts of power. To minimize resistive losses in the solar array bus lines, the array is designed to operate at voltages up to 400 volts. This use of high voltage can increase interactions between the biased solar cell interconnects and plasma environments. With thrusters operating, the system ground is maintained at space plasma potential which exposes large areas of the arrays at the operating voltages. This can increase interactions with both the natural and enhanced charged particle environments. Available data on interactions between biased solar array surfaces and plasma environments are summarized. The apparent relationship between collection phenomena and solar cell size and effects of array size on interactions are discussed. The impact of these interactions on SEPS performance is presented.

  19. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  20. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  1. Low-voltage gyrotrons

    SciTech Connect

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-15

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  2. Low-voltage gyrotrons

    NASA Astrophysics Data System (ADS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  3. Robust nonlinear position-flux zero-bias control for uncertain AMB system

    NASA Astrophysics Data System (ADS)

    Mystkowski, Arkadiusz; Pawluszewicz, Ewa; Dragašius, Egidijus

    2015-08-01

    This paper presents a robust nonlinear control law that combines a parametric uncertainty of the single one-degree-of-freedom active magnetic bearing (AMB) system with disturbance. The robust nonlinear feedback tool such as control Lyapunov function (CLF) and robust stability techniques are developed. The control objective is to globally stabilise the mass position of an AMB with flux feedback. The flux-based control model for an AMB system is derived due to voltage switching strategy with voltage saturation. This strategy enables the flux control under a zero-bias or low-bias flux operation. In the zero-bias control, only one electromagnet in each axis of the AMB is active at any given time, depending on the rotor displacement. The proposed robust nonlinear CLF with a zero-bias for an uncertain AMB system can achieve a dynamic performance superior to that of a linear controller with the zero-bias or with the classical bias operations.

  4. Tevatron AC dipole system

    SciTech Connect

    Miyamoto, R.; Kopp, S.E.; Jansson, A.; Syphers, M.J.; /Fermilab

    2007-06-01

    The AC dipole is an oscillating dipole magnet which can induce large amplitude oscillations without the emittance growth and decoherence. These properties make it a good tool to measure optics of a hadron synchrotron. The vertical AC dipole for the Tevatron is powered by an inexpensive high power audio amplifier since its operating frequency is approximately 20 kHz. The magnet is incorporated into a parallel resonant system to maximize the current. The use of a vertical pinger magnet which has been installed in the Tevatron made the cost relatively inexpensive. Recently, the initial system was upgraded with a more powerful amplifier and oscillation amplitudes up to 2-3{sigma} were achieved with the 980 GeV proton beam. This paper discusses details of the Tevatron AC dipole system and also shows its test results.

  5. Analysis of I-V characteristics of negatively biased panels in a magneto-plasma

    NASA Technical Reports Server (NTRS)

    Miller, D. D.

    1981-01-01

    Current voltage characteristics of negatively biased panels placed in a plasma environment were analyzed for panel size, electron density, and superimposed magnetic field. It is indicated that the thickness of the surrounding sheath and its rate of growth with bias potential depends on all these parameters in a nonlinear manner.

  6. Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

    SciTech Connect

    Park, June-Young; Park, Byong-Guk; Baek, Seung-heon Chris; Park, Seung-Young; Jo, Younghun

    2015-11-02

    We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced at a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.

  7. ac electroosmotic pumping induced by noncontact external electrodes

    PubMed Central

    Wang, Shau-Chun; Chen, Hsiao-Ping; Chang, Hsueh-Chia

    2007-01-01

    Electroosmotic (EO) pumps based on dc electroosmosis is plagued by bubble generation and other electrochemical reactions at the electrodes at voltages beyond 1 V for electrolytes. These disadvantages limit their throughput and offset their portability advantage over mechanical syringe or pneumatic pumps. ac electroosmotic pumps at high frequency (>100 kHz) circumvent the bubble problem by inducing polarization and slip velocity on embedded electrodes,1 but they require complex electrode designs to produce a net flow. We report a new high-throughput ac EO pump design based on induced-polarization on the entire channel surface instead of just on the electrodes. Like dc EO pumps, our pump electrodes are outside of the load section and form a cm-long pump unit consisting of three circular reservoirs (3 mm in diameter) connected by a 1×1 mm channel. The field-induced polarization can produce an effective Zeta potential exceeding 1 V and an ac slip velocity estimated as 1 mm∕sec or higher, both one order of magnitude higher than earlier dc and ac pumps, giving rise to a maximum throughput of 1 μl∕sec. Polarization over the entire channel surface, quadratic scaling with respect to the field and high voltage at high frequency without electrode bubble generation are the reasons why the current pump is superior to earlier dc and ac EO pumps. PMID:19693362

  8. Bias in Psychological Assessment: Heterosexism.

    ERIC Educational Resources Information Center

    Chernin, Jeffrey; Holden, Janice Miner; Chandler, Cynthia

    1997-01-01

    Explores heterosexist bias in seven widely used assessment instruments. Focuses on bias that is observable in the instruments themselves and in the ancillary materials. Describes three types of bias, how these biases manifest in various instruments, and makes recommendations for mental health practitioners and for professionals who develop…

  9. Extending membrane pore lifetime with AC fields: A modeling study

    NASA Astrophysics Data System (ADS)

    Garner, Allen L.; Bogdan Neculaes, V.

    2012-07-01

    AC (sinusoidal) fields with frequencies from kilohertz to gigahertz have been used for gene delivery. To understand the impact of AC fields on electroporation dynamics, we couple a nondimensionalized Smoluchowski equation to an exact representation of the cell membrane voltage obtained solving the Laplace equation. The slope of the pore energy function, dφ/dr, with respect to pore radius is critical in predicting pore dynamics in AC fields because it can vary from positive, inducing pore shrinkage, to negative, driving pore growth. Specifically, the net sign of the integral of dφ/dr over time determines whether the average pore size grows (negative), shrinks (positive), or oscillates (zero) indefinitely about a steady-state radius, rss. A simple analytic relationship predicting the amplitude of the membrane voltage necessary for this behavior agrees well with simulation for frequencies from 500 kHz to 5 MHz for rss < 10 nm. For larger pore size (rss > 10 nm), dφ/dr oscillates about a negative value, suggesting that a net creation of pores may be necessary to maintain a constant pore size. In both scenarios, the magnitude of rss depends only upon the amplitude of the membrane voltage and not directly upon the applied field frequency other than the relationship between the amplitudes of the applied field and membrane voltage.

  10. Biasing and fast degaussing circuit for magnetic materials

    DOEpatents

    Dress, Jr., William B.; McNeilly, David R.

    1984-01-01

    A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a d.c. current and alternately apply a selectively damped a.c. current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

  11. Biasing and fast degaussing circuit for magnetic materials

    DOEpatents

    Dress, W.B. Jr.; McNeilly, D.R.

    1983-10-04

    A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a dc current and alternately apply a selectively damped ac current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

  12. A new bias scheme for a low power consumption ReRAM crossbar array

    NASA Astrophysics Data System (ADS)

    Sun, Wookyung; Choi, Sujin; Shin, Hyungsoon

    2016-08-01

    This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app/12 and 7 × V app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.

  13. Chaos and catastrophe near the plasma frequency in the rf-biased Josephson junction

    SciTech Connect

    Kautz, R.L.; Monaco, R.

    1989-03-01

    At bias frequencies much higher than the plasma frequency, the zero-voltage state of the rf-biased Josephson junction is known to span a range of dc bias proportional to the zero-order Bessel function of the rf amplitude. This pattern is modified at frequencies near the plasma frequency by the onset of chaotic instabilities and by the presence of cusp catastrophes.

  14. Time varying voltage combustion control and diagnostics sensor

    DOEpatents

    Chorpening, Benjamin T.; Thornton, Jimmy D.; Huckaby, E. David; Fincham, William

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  15. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    2002-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  16. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  17. Multilevel cascade voltage source inverter with separate DC sources

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-06-24

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  18. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  19. Assessment of issues for the MAST divertor biasing experiment

    NASA Astrophysics Data System (ADS)

    Helander, P.; Cohen, R. H.; Fielding, S.; Ryutov, D.

    2001-10-01

    A biasing experiment is being undertaken in the MAST scrape-off layer; the goal is to induce intense convection by a toroidally alternating biasing of divertor tiles. This would lead to a thickening of the SOL and a reduction of the heat load on the divertor plates. In addition, by studying the reaction of a plasma to a varying bias, one can collect new information regarding pre-existing SOL turbulence. We consider the following issues: 1. The bias amplitude required to produce significant SOL broadening; 2. Excitation of shear-flow turbulence in convective cells; 3. The role of magnetic shear; 4. Effects of electrostatic sheaths at the divertor plates; 5. Redistribution of heat fluxes during biasing. We show that a significant effect of the biasing on the SOL structure can be reached at relatively small bias voltages 30 V. We also show that the potential perturbations will be limited to a zone between the X-point and the biased tiles, and will be essentially decoupled from the main SOL plasma. Preliminary experimental results may be shown.

  20. Contamination effects on fixed-bias Langmuir probes

    SciTech Connect

    Steigies, C. T.; Barjatya, A.

    2012-11-15

    Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region.

  1. Tailored Voltage Waveform Capacitively-Coupled Plasmas

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul; Lafleur, Trevor; Delattre, Pierre-Alexandre; Johnson, Erik

    2012-10-01

    A major limitation of large-area capacitively-coupled plasmas for materials processing is the inability to increase plasma density without increasing ion bombardment energy. Heil et al. (J. Phys. D 41. 165202, (2008)) demonstrated that for a driving voltage comprising one frequency, f, and it's harmonic 2f, the symmetry of the sheaths can be broken (the Electrical Asymmetry Effect, EAE). We have investigated large-area plasmas (50cm dia) in Ar driven by arbitrary voltage waveforms. Specifically we studied waveforms comprising sharp positive pulses (10-20ns wide, 15MHz repetition frequency). The voltage waveform was measured by an HV probe close to the powered electrode edge, the electron density was measured with a microwave hairpin resonator, the ion flux was measured by an array of planar ion flux probes in the grounded counter-electrode, and the power absorbed was determined from the current and voltage waveforms measured by a derivative probe. As well as the expected EAE observed in the electrode self-bias, we were able to demonstrate a dramatic increase in electron density (and concomitant increased power absorption) with reduced pulse-width at constant amplitude, in qualitative agreement with recent PIC simulations (Lafleur et al, APL 100, 194101(2012)).

  2. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  3. Interplay between electron overheating and ac Josephson effect

    NASA Astrophysics Data System (ADS)

    De Cecco, A.; Le Calvez, K.; Sacépé, B.; Winkelmann, C. B.; Courtois, H.

    2016-05-01

    We study the response of high-critical-current proximity Josephson junctions to a microwave excitation. Electron overheating in such devices is known to create hysteretic dc voltage-current characteristics. Here we demonstrate that it also strongly influences the ac response. The interplay of electron overheating and ac Josephson dynamics is revealed by the evolution of the Shapiro steps with the microwave drive amplitude. Extending the resistively shunted Josephson junction model by including a thermal balance for the electronic bath coupled to phonons, a strong electron overheating is obtained.

  4. Device for monitoring cell voltage

    DOEpatents

    Doepke, Matthias; Eisermann, Henning

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  5. Biased to Learn Language

    ERIC Educational Resources Information Center

    Sebastian-Galles, Nuria

    2007-01-01

    Some recent publications that explore the foundations of early language development are reviewed in this article. The review adopts the pivotal idea that infants' advancements are helped by the existence of different types of biases. The infant's discovery of the phonological properties of the language of the environment, as well as their learning…

  6. Optically biased laser gyro

    SciTech Connect

    Anderson, D.Z.; Chow, W.W.; Scully, M.O.; Sanders, V.E.

    1980-10-01

    We describe a four-mode ring laser that exhibits none of the mode-locking characteristics that plague laser gyros. This laser is characterized by a bias that changes sign with a change in the direction of rotation and prevents the counterpropagating modes from locking. A theoretical analysis explaining the experimental results is outlined.

  7. AC/RF Superconductivity

    SciTech Connect

    Ciovati, Gianluigi

    2015-02-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  8. AC solar cell

    SciTech Connect

    Schutten, H.P.; Benjamin, J.A.; Lade, R.W.

    1986-03-18

    An AC solar cell is described comprising: a pair of PN junction type solar cells connected in antiparallel between a pair of main terminals; and means for electrically directing light alternatingly without mechanical movement on the PN junctions to generate an alternating potential across the main terminals.

  9. AC 67 Launch Video

    NASA Technical Reports Server (NTRS)

    1987-01-01

    Live footage of the Unmanned Atlas Centaur (AC) 67 launch is presented on March 26, 1987 at the WESH television station in Florida. Lightning is shown after 49 seconds into the flight. The vehicle is totally destroyed due to a cloud-to-ground lightning flash.

  10. Changes in behavioral responses of Lygus lineolaris (Hemiptera: Miridae) from various applied signal voltages during EPG recordings

    Technology Transfer Automated Retrieval System (TEKTRAN)

    A 3rd-generation AC-DC electrical penetration graph (EPG) monitor was used to study feeding behaviors of pre-reproductive adult Lygus lineolaris (Hemiptera: Miridae) on pinhead (<3mm) cotton squares, applying different signal voltages at several input impedances. The AC-DC monitor allows a user to s...

  11. Self-biased 215 MHz magnetoelectric NEMS resonator for ultra-sensitive DC magnetic field detection.

    PubMed

    Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X

    2013-01-01

    High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields. PMID:23760520

  12. Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

    PubMed Central

    Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

    2013-01-01

    High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields. PMID:23760520

  13. Twist in the bias dependence of spin torques in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Boyn, Sören; Sampaio, João; Cros, Vincent; Grollier, Julie; Fukushima, Akio; Kubota, Hitoshi; Yakushiji, Kay; Yuasa, Shinji

    2016-06-01

    The spin torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a method for the accurate extraction of this bias dependence from experiments over large voltage ranges. We study several junctions with different magnetic layer structures of the top electrode. Our results obtained on junctions with symmetric CoFeB electrodes agree well with theoretical calculations. The bias dependences of asymmetric samples, with top electrodes containing NiFe, however, are twisted compared to the quadratic form generally assumed. Our measurements reveal the complexity of spin-torque mechanisms at large bias.

  14. STABILITY OF HIGH VOLTAGE MODULATORS FOR NONLINEAR LOADS

    SciTech Connect

    PAWLEY,J.C; TOOKER,J; PEAVY,J; CARY,W.P; NEREM,A; HOYT,D; LOHR,J

    2003-10-01

    OAK-B135 Gyrotrons have a nonlinear voltage--current characteristic such that the small signal or ac impedance changes as operational voltage and currents are reached. The ac impedance determines the stability of a voltage or current control system. this can become particularly challenging when several gyrotron are connected in parallel to a single modulator. With all gyrotrons hooked to a common ground, large current loops can be generated as well as non-canceling currents in individual coaxial lines. These inequalities can provide the required feedback impulse to start an oscillation condition in the power system for the tubes. Recent operation of two CPI 110 GHz gyrotrons in the MN class from a single modulator on DIII-D has shown instability in the power system. An oscillation in the drive current occurs at various points in the ramp up and flat top portions of the 80 kV voltage pulse with each tube drawing 40 A at full voltage. Efforts to stabilize these instabilities are presented along with some modeling and examination of the issues for gyrotron modulators.

  15. Technical Aspects of the Advanced Camera For Surveys Repair (ACS-R)

    NASA Technical Reports Server (NTRS)

    Rinehart, Stephen; Cheng, Edward S.; Sirianni, Marco

    2008-01-01

    The ACS Repair (ACS-R) team includes contributors from NASA's Goddard Space Flight Center, Ball Aerospace, and Teledyne Imaging Sensors; It determined that all of the capabilities of the ACS could be restored and created a concept for the ACS-R component of SN4. ACSR will restore the WFC of ACS by replacing the existing CCD Electronics Box (CEB) with the CEB-Replacement (CEB-R) and providing power from a new Low Voltage Power Supply Replacement (LVPS-8). The new LVPS-R will also attempt to restore the HRC function by providing power through the original power bus. In this presentation, we faeus on the concept and technical aspects of the ACS-R.

  16. Voltage controlled current source

    DOEpatents

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  17. Electron launching voltage monitor

    DOEpatents

    Mendel, C.W.; Savage, M.E.

    1992-03-17

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

  18. Electron launching voltage monitor

    DOEpatents

    Mendel, Clifford W.; Savage, Mark E.

    1992-01-01

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors.

  19. Voltage Amplification using Plasma

    SciTech Connect

    Farias, E. E.; Cavalcanti, G. H.; Santiago, M. A. M.

    2006-12-04

    The purpose of this work is to present experimental results about voltage amplification using plasma produced by a simple neon lamp, series connected with a signal generator and discrete circuit elements. The main advantage of employing plasma as an amplifier is due to its ability to drive larger power and potentially to operate in a larger frequency range compared with traditional amplifiers. Our results show that both, the voltage gain and the frequency range where the gain is bigger than one, are related to the plasma density which may be adjusted by a proper control of electrical discharge conditions. The plasma produced into the neon lamp exhibits a diode characteristic that is the principal responsible by the nonlinear plasma response. The amplification occurs when the plasma shows a negative conductance. In this regime the lamp works as an active amplifier and voltage gain higher than 18 was obtained.

  20. Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors.

    PubMed

    Feng, Wei; Zheng, Wei; Chen, XiaoShuang; Liu, Guangbo; Hu, PingAn

    2015-12-01

    We report a modulation of threshold voltage instability of back-gated multilayer InSe FETs by gate bias stress. The performance stability of multilayer InSe FETs is affected by gate bias polar, gate bias stress time and gate bias sweep rate under ambient conditions. The on-current increases and threshold voltage shifts to negative gate bias stress direction with negative bias stress applied, which are opposite to that of positive bias stress. The intensity of gate bias stress effect is influenced by applied gate bias time and the sweep rate of gate bias stress. The behavior can be explained by the surface charge trapping model due to the adsorbing/desorbing oxygen and/or water molecules on the InSe surface. This study offers an opportunity to understand gate bias stress modulation of performance instability of back-gated multilayer InSe FETs and provides a clue for designing desirable InSe nanoelectronic and optoelectronic devices. PMID:26575205

  1. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  2. High voltage distributed amplifier

    NASA Astrophysics Data System (ADS)

    Willems, D.; Bahl, I.; Wirsing, K.

    1991-12-01

    A high-voltage distributed amplifier implemented in GaAs MMIC technology has demonstrated good circuit performance over at least two octave bandwidth. This technique allows for very broadband amplifier operation with good efficiency in satellite, active-aperture radar, and battery-powered systems. Also, by increasing the number of FETs, the amplifier can be designed to match different voltage rails. The circuit does require a small amount of additional chip size over conventional distributed amplifiers but does not require power dividers or additional matching networks. This circuit configuration should find great use in broadband power amplifier design.

  3. A mechanical-thermo-magneto model for self-biased magnetoelectric effect in laminated composite

    NASA Astrophysics Data System (ADS)

    Yao, Hong; Shi, Yang; Gao, Yuan-Wen

    2016-03-01

    In this paper, a mechanical-thermo-magneto model for self-biased magnetoelectric effect in laminated composite with high-permeability materials is established. Considering the effects of demagnetization, pre-stress and temperature, the effective magnetic field and piezomagnetic coefficient of magnetostrictive layers are calculated. Then, the effects of temperature and pre-stress on ME effect are investigated. Finally, the combined effect of temperature and pre-stress on zero-bias ME voltage coefficient is discussed in detail to achieve a good ME conversion efficiency. The numerical results show that due to the occurrence of the additional magnetic field from high-permeability materials, available self-biased ME effect can be obtained in the proposed model. The operating temperature affects not only the peak value but also the initial value of ME voltage coefficient. Also, pre-stress can change the temperature effect on the zero-bias ME voltage coefficient obviously.

  4. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    SciTech Connect

    Laghari, J.R. )

    1992-02-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 {times} 10{sup 6} rad, electrical stress at 40 V{sub rms}/{mu}m, and thermal stress at 90{degrees} C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life.

  5. Equivalent Electrical Circuit Representations of AC Quantized Hall Resistance Standards

    PubMed Central

    Cage, M. E.; Jeffery, A.; Matthews, J.

    1999-01-01

    We use equivalent electrical circuits to analyze the effects of large parasitic impedances existing in all sample probes on four-terminal-pair measurements of the ac quantized Hall resistance RH. The circuit components include the externally measurable parasitic capacitances, inductances, lead resistances, and leakage resistances of ac quantized Hall resistance standards, as well as components that represent the electrical characteristics of the quantum Hall effect device (QHE). Two kinds of electrical circuit connections to the QHE are described and considered: single-series “offset” and quadruple-series. (We eliminated other connections in earlier analyses because they did not provide the desired accuracy with all sample probe leads attached at the device.) Exact, but complicated, algebraic equations are derived for the currents and measured quantized Hall voltages for these two circuits. Only the quadruple-series connection circuit meets our desired goal of measuring RH for both ac and dc currents with a one-standard-deviation uncertainty of 10−8 RH or less during the same cool-down with all leads attached at the device. The single-series “offset” connection circuit meets our other desired goal of also measuring the longitudinal resistance Rx for both ac and dc currents during that same cool-down. We will use these predictions to apply small measurable corrections, and uncertainties of the corrections, to ac measurements of RH in order to realize an intrinsic ac quantized Hall resistance standard of 10−8 RH uncertainty or less.

  6. New zero voltage switching DC converter with flying capacitors

    NASA Astrophysics Data System (ADS)

    Lin, Bor-Ren; Shiau, Tung-Yuan

    2016-04-01

    A new soft switching converter is presented for medium power applications. Two full-bridge converters are connected in series at high voltage side in order to limit the voltage stress of power switches at Vin/2. Therefore, power metal-oxide-semiconductor field-effect transistors (MOSFETs) with 600 V voltage rating can be adopted for 1200 V input voltage applications. In order to balance two input split capacitor voltages in every switching cycle, two flying capacitors are connected on the AC side of two full-bridge converters. Phase-shift pulse-width modulation (PS-PWM) is adopted to regulate the output voltage. Based on the resonant behaviour by the output capacitance of MOSFETs and the resonant inductance, active MOSFETs can be turned on under zero voltage switching (ZVS) during the transition interval. Thus, the switching losses of power MOSFETs are reduced. Two full-bridge converters are used in the proposed circuit to share load current and reduce the current stress of passive and active components. The circuit analysis and design example of the prototype circuit are provided in detail and the performance of the proposed converter is verified by the experiments.

  7. Resonant tunneling in small current-biased Josephson Junctions

    SciTech Connect

    Schmidt, J.M.

    1994-05-01

    Effects of resonant tunneling between bound quantum states of a current-biased Josephson tunnel junction is studied both theoretically and experimentally. Several effects are predicted to arise from resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and enhanced rate of escape from zero voltage state to voltage state at particular values of bias current. A model is developed to estimate magnitude and duration of voltage peaks, and to estimate enhancement of the escape rate, which appears as peaks in the rate as a function of bias current. An experimental investigation was carried out in an attempt to observe these predicted peaks in the escape rate distribution in a current-biased DC SQUID, which is shown to be dynamically equivalent to a Josephson junction with adjustable critical current. Electrical contact to each SQUID (fabricated from aluminium) was made through high resistance thin film leads located on the substrate. These resistors provided a high impedance at the plasma frequency which is for the isolation of the SQUID from its electromagnetic environment. Measurements were carried out on a dilution refrigerator at temperatures as low as 19 mK. No evidence was found for resonant tunneling; this is attributed to effective temperatures of hundreds of millikelvin. The behavior is well explained by a heating model where the high effective temperatures are generated by ohmic heating of the electron gas of the isolation resistors, which decouples from the phonon system (hot electron effect). The prospects for further theoretical and experimental research are discussed.

  8. Sensorless operation of surface mount permanent magnet AC (PMAC) motors

    SciTech Connect

    Toliyat, H.A.; Rahman, K.M.; Shet, D.S.

    1999-12-01

    A sensorless field oriented control scheme for surface mount permanent magnet ac (PMAC) motor with split phase stator windings is presented. This motor is obtained by splitting the phase windings of a conventional three phase motor. The six-phase motor, however is run as a three-phase motor by connecting the split phase stator windings in series, while the taps are made available for voltage measurements. By measuring the terminal voltages and the line currents, absolute position of the permanent magnet ac motor driven by a current regulated PWM inverter with a hysteresis controller is estimated. The estimated position information is independent of the stator resistance, thus this scheme is even applicable at low speeds. Results are presented to show the effectiveness of the new controller, and it is also shown that the position error is negligible.

  9. The a.c. Josephson effect without superconductivity

    PubMed Central

    Gaury, Benoit; Weston, Joseph; Waintal, Xavier

    2015-01-01

    Superconductivity derives its most salient features from the coherence of the associated macroscopic wave function. The related physical phenomena have now moved from exotic subjects to fundamental building blocks for quantum circuits such as qubits or single photonic modes. Here we predict that the a.c. Josephson effect—which transforms a d.c. voltage Vb into an oscillating signal cos (2eVbt/ħ)—has a mesoscopic counterpart in normal conductors. We show that when a d.c. voltage Vb is applied to an electronic interferometer, there exists a universal transient regime where the current oscillates at frequency eVb/h. This effect is not limited by a superconducting gap and could, in principle, be used to produce tunable a.c. signals in the elusive 0.1–10-THz ‘terahertz gap’. PMID:25765929

  10. Temperature trend biases

    NASA Astrophysics Data System (ADS)

    Venema, Victor; Lindau, Ralf

    2016-04-01

    In an accompanying talk we show that well-homogenized national dataset warm more than temperatures from global collections averaged over the region of common coverage. In this poster we want to present auxiliary work about possible biases in the raw observations and on how well relative statistical homogenization can remove trend biases. There are several possible causes of cooling biases, which have not been studied much. Siting could be an important factor. Urban stations tend to move away from the centre to better locations. Many stations started inside of urban areas and are nowadays more outside. Even for villages the temperature difference between the centre and edge can be 0.5°C. When a city station moves to an airport, which often happened around WWII, this takes the station (largely) out of the urban heat island. During the 20th century the Stevenson screen was established as the dominant thermometer screen. This screen protected the thermometer much better against radiation than earlier designs. Deficits of earlier measurement methods have artificially warmed the temperatures in the 19th century. Newer studies suggest we may have underestimated the size of this bias. Currently we are in a transition to Automatic Weather Stations. The net global effect of this transition is not clear at this moment. Irrigation on average decreases the 2m-temperature by about 1 degree centigrade. At the same time, irrigation has increased significantly during the last century. People preferentially live in irrigated areas and weather stations serve agriculture. Thus it is possible that there is a higher likelihood that weather stations are erected in irrigated areas than elsewhere. In this case irrigation could lead to a spurious cooling trend. In the Parallel Observations Science Team of the International Surface Temperature Initiative (ISTI-POST) we are studying influence of the introduction of Stevenson screens and Automatic Weather Stations using parallel measurements

  11. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  12. Voltage-Controlled Oscillator

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Integrated Component Systems, Inc. incorporated information from a NASA Tech Briefs article into a voltage-controlled oscillator it designed for a customer. The company then applied the technology to its series of phase-locked loop synthesizers, which offer superior phase noise performance.

  13. Compact high voltage battery

    SciTech Connect

    Kinsman, G.F.; Land, E.H.

    1980-03-18

    A high voltage, low impedance laminar battery comprising a stack of series connected cells confined under pressure in a housing is described. The cells comprise laminar anodes, cathodes and separators. The cells are connected in series by laminar conductive intercell connectors. An annular spacer is associated with each cell. The spacers are separated by interdigitated ones of the separators and intercell connectors.

  14. Measuring Breakdown Voltage.

    ERIC Educational Resources Information Center

    Auer, Herbert J.

    1978-01-01

    The article discusses an aspect of conductivity, one of the electrical properties subdivisions, and describes a tester that can be shop-built. Breakdown voltage of an insulation material is specifically examined. Test procedures, parts lists, diagrams, and test data form are included. (MF)

  15. Geomagnetism and Induced Voltage

    ERIC Educational Resources Information Center

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it is…

  16. Three-phase ac-to-ac series-resonant power converter with a reduced number of thyristors

    SciTech Connect

    Klaassens, J.B.; de Beer, F. )

    1991-07-01

    This paper reports that ac-ac series-resonant converters have been proven to be functional and useful. Power pulse modulation with internal frequencies of tens of kHz and suited for multikilowatt power levels is applied to a series-resonant converter system for generating synthesized multiphase bipolar waveforms with reversible power flow and flow distortion. The use of a series-resonant circuit for power transfer and control obtains natural current commutation of the thyristors and the prevention of excessive stresses on components. Switches are required which have bidirectional current conduction and voltage blocking ability. The conventional series-resonant ac-ac converter applies a total for 24 anti-parallel thyristors. An alternative circuit configuration for the series-resonant ac-ac converter with only 12 thyristors is also presented. The alternative power circuit has three neutrals, related to the polyphase source, the load and the converter, which may be interconnected. If they are connected, the high-frequency component of the source and load currents will flow through the connection between the neutrals. The test results of a converter system generating three-phase sinusoidal input and output waveforms have demonstrated the significant aspects of this type of power interfaces.

  17. AC power systems handbook

    SciTech Connect

    Whitaker, J.

    1991-01-01

    Transient disturbances are what headaches are made of. Whatever you call them-spikes, surges, are power bumps-they can take your equipment down and leave you with a complicated and expensive repair job. Protection against transient disturbances is a science that demands attention to detail. This book explains how the power distribution system works, what can go wrong with it, and how to protect a facility against abnormalities. system grounding and shielding are covered in detail. Each major method of transient protection is analyzed and its relative merits discussed. The book provides a complete look at the critical elements of the ac power system. Provides a complete look at the ac power system from generation to consumption. Discusses the mechanisms that produce transient disturbances and how to protect against them. Presents diagrams to facilitate system design. Covers new areas, such as the extent of the transient disturbance problem, transient protection options, and stand-by power systems.

  18. Module Nine: Relationships of Current, Counter EMF, and Voltage in LR Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The student will study the ways that inductance affects voltage and current in Direct Current (DC) and Alternating Current (AC) circuits and why and how inductors cause these actions. The module is divided into six lessons: rise and decay of current and voltage, LR (inductive-resistive) time constant, using the universal TC (time constant) chart,…

  19. Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report

    SciTech Connect

    Frank Hoffmann, PhD; Aspinall, Rik

    2012-12-10

    Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

  20. Designing LC filters for AC-motor drives

    SciTech Connect

    Gath, P.A.; Lucas, M.

    1995-12-31

    This paper presents practical design guidelines for designing LC filters for AC-motor drive applications. A DC choke and an electrolytic capacitor bank on the DC bus filter the voltage and the current ripples and improve the input power factor. Capacitor and choke values are derived to optimize overall filter performance. Costs associated with the respective component values can then be obtained to analyze cost trade-offs between selected values. Helpful hints are also given.

  1. A calculable, transportable audio-frequency AC reference standard

    SciTech Connect

    Oldham, N.M.; Hetrick, P.S. ); Zeng, X. )

    1989-04-01

    A transportable ac voltage source is described, in which sinusoidal signals are synthesized digitally in the audio-frequency range. The rms value of the output waveform may be calculated by measuring the dc level of the individual steps used to generate the waveform. The uncertainty of this calculation at the 7-V level is typically less than +-5 ppm from 60 Hz to 2 kHz and less than +-10 ppm from 30 Hz to 15 kHz.

  2. PASP, a high voltage array/plasma interaction experiment. [Photovoltaic Array Space Power

    NASA Technical Reports Server (NTRS)

    Burger, Dale R.

    1991-01-01

    The author discusses the photovoltaic array space power (PASP) experiment, which is designed to obtain data on the interaction between high-voltage photovoltaic arrays and the polar, low-earth plasma environment. Up to six small test arrays (three each of planar and concentrator designs) can be voltage biased over a range of +/- 500 V. During the bias voltage sequence, the array current leakage is measured and array arc events are monitored. If any arcing occurs the arc characteristics will be measured by a transient pulse monitor. An emitter is included to allow voltage bias to be applied to a plasma-charged or uncharged spacecraft. Similarly, the frames of the concentrator arrays can be left floating or can be tied to the negative array terminal. An environmental data scan is made before each bias voltage sequence. This scan collects information on the plasma, array-current-versus-voltage curves, and neutral particle partial pressure. The requirement for high voltages created problems which were met by circuit isolation and logical fault protection.

  3. Analysis of ac Surface Photovoltages in Accumulation Region

    NASA Astrophysics Data System (ADS)

    Munakata, Chusuke

    1988-05-01

    Equations for ac surface photovoltages (SPVs) excited with a chopped photon beam (PB) in the accumulation region are proposed for such semiconductors as silicon and germanium. Following the previously reported half-sided junction model for the depleted or inverted region, equations for photocurrent density and surface impedance per unit area have been newly deduced. When the surface potential is highly negative in p-type semiconductors, the maximum ac SPV in the accumulation region is limited by the conductance due to majority carrier diffusion flow. This is compared with the strong inversion region, where the mathematically maximum SPV depends upon the minority carrier diffusion flow. The voltage ratio between the two maximum ac SPVs is the same as that previously reported using the different models for dc SPVs excited with a continuous PB.

  4. A Perpendicular Biased 2nd Harmonic Cavity for the Fermilab Booster

    SciTech Connect

    Tan, C. Y.; Dey, J.; Madrak, R. L.; Pellico, W.; Romanov, G.; Sun, D.; Terechkine, I.

    2015-07-13

    A perpendicular biased 2nd harmonic cavity is currently being designed for the Fermilab Booster. Its purpose cavity is to flatten the bucket at injection and thus change the longitudinal beam distribution so that space charge effects are decreased. It can also with transition crossing. The reason for the choice of perpendicular biasing over parallel biasing is that the Q of the cavity is much higher and thus allows the accelerating voltage to be a factor of two higher than a similar parallel biased cavity. This cavity will also provide a higher accelerating voltage per meter than the present folded transmission line cavity. However, this type of cavity presents technical challenges that need to be addressed. The two major issues are cooling of the garnet material from the effects of the RF and the cavity itself from eddy current heating because of the 15 Hz bias field ramp. This paper will address the technical challenge of preventing the garnet from overheating.

  5. Superposition of an AC field improves the discrimination between peptides in nanopore analysis.

    PubMed

    Jakova, Elisabet; Lee, Jeremy S

    2015-07-21

    In standard nanopore analysis a constant DC voltage is used to electrophoretically drive small molecules and peptides towards a pore. Superposition of an AC voltage at particular frequencies causes molecules to oscillate as they approach the pore which can alter the event parameters, the blockade current (I) and blockade time (T). Four peptides with similar structures were studied. Alpha-helical peptides A10 (FmocDDA10KK), A14, A18 and retro-inverso A10. It was shown that the ratio of translocations to bumping events could be manipulated by a combination of AC voltages and frequencies. In particular, A10 could be studied without interference from retro-inverso A10. Similarly, a large, intrinsically disordered protein of 140 amino acids, α-synuclein, which translocates the pore readily in a DC field could be prevented from doing so by application of an AC field of 200 mV at 100 MHz. PMID:25699656

  6. Simulation of an ac electro-osmotic pump with step microelectrodes

    NASA Astrophysics Data System (ADS)

    Kim, Byoung Jae; Lee, Seung-Hyun; Rezazadeh, Soghra; Sung, Hyung Jin

    2011-05-01

    Pumps with step microelectrodes subjected to an ac voltage are known to have faster pumping rates than those with planar asymmetric microelectrodes. The driving force for pumping in these systems is ac electro-osmosis. This paper aims to understand the flow behaviors of pumps with step microelectrodes by using a realistic model applicable to high external voltages. This model takes the steric effect due to the finite sizes of ions into account and copes with the exponential sensitivity of the counterion concentration to voltage. The effects on the pumping flow rate of varying the pump parameters were investigated. The geometrical parameters were optimized, and the effects of varying the ac frequency and amplitude were examined. The electrical potential of the fluid and the electrical charge at the electrode surface were solved simultaneously, and the Stokes equation was used to describe the fluid flow.

  7. Non-oxidized porous silicon-based power AC switch peripheries

    NASA Astrophysics Data System (ADS)

    Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoué, Jérôme; Gautier, Gaël

    2012-10-01

    We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

  8. Non-oxidized porous silicon-based power AC switch peripheries.

    PubMed

    Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoué, Jérôme; Gautier, Gaël

    2012-01-01

    We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries. PMID:23057856

  9. Non-oxidized porous silicon-based power AC switch peripheries

    PubMed Central

    2012-01-01

    We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries. PMID:23057856

  10. Simplified Quantum Transport Theory for Finite Bias and Temperature

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoguang; Wu, Yuning; Pantelides, Sokrates

    We reformulate the Landauer-Buttiker formula for quantum transport by explicitly accounting for the energy and bias voltage dependence of the transmission probability. Under the assumption of a constant electric field, a simple formula for the differential conductance under a finite bias and at a finite temperature is derived that does not require a nonequilibrium self-consistent calculation. Calculation for the tunneling current through Au-Benzendithiol-Au molecular junction shows excellent agreement with the nonequilibrium Green's function (NEGF) method at zero temperature. Temperature dependent I-V curves for a number of devices are demonstrated. Supported by NSF Grant 1508898.

  11. Development of Automatic Voltage Regulator for Low Voltage Distribution Systems

    NASA Astrophysics Data System (ADS)

    Matsuda, Katsuhiro; Horikoshi, Kazuhiro; Seto, Toshiyuki; Iyama, Osamu; Kobayashi, Hiromu

    This paper presents the development of a new type of voltage regulator that can adequately maintain the voltage supplied to customers, dealing with the problem of voltage control along with the widespread use of photovoltaic power generation systems. The developed equipment is a pole-mounted type voltage regulator consisting of a step-down transformer that converts voltage from high to low and a series transformer for voltage compensation. The demonstration test conducted at the CRIEPI Akagi Test Center confirmed that the voltage control function of the developed voltage regulator is satisfactory based on the proposed control algorism. Also, simulation analysis, on the assumption of the clustered installation of photovoltaic power generation systems, confirmed that the introduction of the developed voltage regulator enables the system voltage to be adequately maintained and full photovoltaic power generation is possible without suppressing the output. It is anticipated that the developed voltage regulator is very effective in adequately regulating the voltage for low voltage distribution systems and gives an effective way for even more widespread photovoltaic power generation.

  12. Negativity bias and basic values.

    PubMed

    Schwartz, Shalom H

    2014-06-01

    Basic values explain more variance in political attitudes and preferences than other personality and sociodemographic variables. The values most relevant to the political domain are those likely to reflect the degree of negativity bias. Value conflicts that represent negativity bias clarify differences between what worries conservatives and liberals and suggest that relations between ideology and negativity bias are linear. PMID:24970450

  13. Assessing Bias in Search Engines.

    ERIC Educational Resources Information Center

    Mowshowitz, Abbe; Kawaguchi, Akira

    2002-01-01

    Addresses the measurement of bias in search engines on the Web, defining bias as the balance and representation of items in a collection retrieved from a database for a set of queries. Assesses bias by measuring the deviation from the ideal of the distribution produced by a particular search engine. (Author/LRW)

  14. Test Bias and the Elimination of Racism

    ERIC Educational Resources Information Center

    Sedlacek, William E.

    1977-01-01

    Three types of test bias are discussed: content bias, atmosphere bias, and use bias. Use bias is considered the most important. Tests reflect the bias in society, and eliminating test bias means eliminating racism and sexism in society. A six-stage model to eliminate racism and sexism is presented. (Author)

  15. Power Electronic Transformer based Three-Phase PWM AC Drives

    NASA Astrophysics Data System (ADS)

    Basu, Kaushik

    A Transformer is used to provide galvanic isolation and to connect systems at different voltage levels. It is one of the largest and most expensive component in most of the high voltage and high power systems. Its size is inversely proportional to the operating frequency. The central idea behind a power electronic transformer (PET) also known as solid state transformer is to reduce the size of the transformer by increasing the frequency. Power electronic converters are used to change the frequency of operation. Steady reduction in the cost of the semiconductor switches and the advent of advanced magnetic materials with very low loss density and high saturation flux density implies economic viability and feasibility of a design with high power density. Application of PET is in generation of power from renewable energy sources, especially wind and solar. Other important application include grid tied inverters, UPS e.t.c. In this thesis non-resonant, single stage, bi-directional PET is considered. The main objective of this converter is to generate adjustable speed and magnitude pulse width modulated (PWM) ac waveforms from an ac or dc grid with a high frequency ac link. The windings of a high frequency transformer contains leakage inductance. Any switching transition of the power electronic converter connecting the inductive load and the transformer requires commutation of leakage energy. Commutation by passive means results in power loss, decrease in the frequency of operation, distortion in the output voltage waveform, reduction in reliability and power density. In this work a source based partially loss-less commutation of leakage energy has been proposed. This technique also results in partial soft-switching. A series of converters with novel PWM strategies have been proposed to minimize the frequency of leakage inductance commutation. These PETs achieve most of the important features of modern PWM ac drives including 1) Input power factor correction, 2) Common

  16. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

    NASA Astrophysics Data System (ADS)

    García, S.; Íñiguez-de-la-Torre, I.; Pérez, S.; Mateos, J.; González, T.

    2013-08-01

    In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of a sinusoidal AC voltage superimposed to the DC bias and by the simulation of the intrinsic device coupled with the consistent solution of a parallel RLC resonant circuit connected in series. InP diodes with active region about 1 μm offer a conversion efficiency up to 5.5% for frequencies around 225 GHz. By virtue of the larger saturation velocity, for a given diode length, oscillation frequencies in GaN diodes are higher than for InP structures. Current oscillations at frequencies as high as 675 GHz, with 0.1% efficiency, are predicted at the sixth generation band in a 0.9 μm-long GaN diode, corroborating the suitability of GaN to operate near the THz band. At the first generation band, structures with notch, in general, provide lower oscillation frequencies and efficiencies in comparison with the same structures without notch. However, a higher number of generation bands are originated in notched diodes, thus, typically reaching larger frequencies. Self-heating effects reduce the performance, but in GaN diodes the efficiency is not significantly degraded.

  17. A low voltage ``railgun''

    NASA Astrophysics Data System (ADS)

    Starr, Stanley O.; Youngquist, Robert C.; Cox, Robert B.

    2013-01-01

    Due to recent advances in solid-state switches and ultra-capacitors, it is now possible to construct a "railgun" that can operate at voltages below 20 V. Railguns typically operate above a thousand volts, generating huge currents for a few milliseconds to provide thousands of g's of acceleration to a small projectile. The low voltage railgun described herein operates for much longer time periods (tenths of seconds to seconds), has far smaller acceleration and speed, but can potentially propel a much larger object. The impetus for this development is to lay the groundwork for a possible ground-based supersonic launch track, but the resulting system may also have applications as a simple linear motor. The system would also be a useful teaching tool, requiring concepts from electrodynamics, mechanics, and electronics for its understanding, and is relatively straightforward to construct.

  18. Increased voltage photovoltaic cell

    NASA Technical Reports Server (NTRS)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  19. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  20. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  1. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  2. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  3. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  4. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  5. Characterization and snubbing of a bidirectional MCT in a resonant ac link converter

    NASA Technical Reports Server (NTRS)

    Lee, Tony; Elbuluk, Malik E.; Zinger, Donald S.

    1993-01-01

    The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.

  6. Evaluating solutions to sponsorship bias.

    PubMed

    Doucet, M; Sismondo, S

    2008-08-01

    More than 40 primary studies, and three recent systematic reviews and meta-analyses, have shown a clear association between pharmaceutical industry funding of clinical trials and pro-industry results. Industry sponsorship biases published scientific research in favour of the sponsors, a result of the strong interest commercial sponsors have in obtaining favourable results. Three proposed remedies to this problem are widely agreed upon among those concerned with the level of sponsorship bias: financial disclosure, reporting standards and trial registries. This paper argues that all of these remedies either fail to address the mechanisms by which pharmaceutical companies' sponsorship leads to biased results-design bias, multiple trials with predictable outcomes, fraud, rhetorical effects and publication bias-or else only inadequately address those mechanisms. As a result, the policies normally proposed for dealing with sponsorship bias are unable to eliminate it. Only completely separating public clinical research from pharmaceutical industry funding can eliminate sponsorship bias. PMID:18667655

  7. Investigation of the uncertainties of the NBS (National Bureau of Standards) thermal voltage and current converters

    NASA Astrophysics Data System (ADS)

    Hermach, F. L.

    1985-04-01

    The uncertainties of the NBS reference and working standards for ac-dc current and voltage transfer measurements have been redetermined, to 50 and 100 kHz, respectively, by means of a set of multijunction thermal converters (MJTCs), an improved emf comparator, and extensive series of intercomparisons. As a result the accuracy of the NBS standards and the output of its calibration service for ac-dc current and voltage transfer are considered to be on a much firmer and better documented basis. Improvement by factors of two to five in the calibration accuracy for high-quality, single-range thermoelements and thermal voltage converters is possible for certain ranges of current, voltage, and frequency. For very special tests, such as international comparisons, accuracies approaching 1 ppm are within reach.

  8. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  9. Effects of bias on surface properties of TiN films fabricated by hollow cathode discharge

    SciTech Connect

    Jiang, H. F.; Tian, X. B.; Yang, S. Q.; Fu, Ricky K. Y.; Chu, Paul K.

    2007-07-15

    Titanium nitride (TiN) films have been deposited on AISI 304 stainless steel substrates using hollow cathode reactive plasma vapor deposition. Titanium is introduced by sputtering the Ti cathode nozzle and TiN is formed in the presence of a nitrogen plasma excited by radio frequency. The substrate bias voltage is varied from 0 to -300 V to investigate its effect on the mechanical and structural properties of the films. X-ray diffraction results show the formation of TiN (111) and Ti{sub 2}N (220) phases in the films. The sample bias has a critical influence on the thickness of the deposited films. The bias of -200 V leads to the thickest films (about 1680 nm) and the deposition rate is 18.7 nm/min. The microhardness, root-mean-square (rms) roughness values, and tribological properties also exhibit nonlinear relationship with increasing bias voltages. The highest hardness of about 1027 hardness vickers and best wear resistance are achieved at a bias voltage of -100 V. Atomic force microscopy results reveal the lowest rms surface roughness of 3.19 nm when the bias voltage is -200 V.

  10. Transport ac losses of a second-generation HTS tape with a ferromagnetic substrate and conducting stabilizer

    NASA Astrophysics Data System (ADS)

    Li, Shuo; Chen, Du-Xing; Fang, Jin

    2015-12-01

    The current-voltage curve and transport ac loss of a second-generation HTS tape with a ferromagnetic NiW substrate and brass stabilizer are measured. It is found that the ac loss is up to two orders of magnitude larger than what is expected by the power-law E(J) determined by the current-voltage curve and increases with increasing frequency. Modeling results show that the overly large ac loss is contributed by the ac loss in the HTS strip enhanced by the NiW substrate and the magnetic hysteresis loss in the substrate, and the frequency-dependent loss occurs in the brass layer covering the substrate but not in the ferromagnetic substrate itself as assumed previously. The ac loss in the brass layer is associated with transport currents but not eddy currents, and it has some features similar to ordinary eddy-current loss with significant differences.

  11. Simulation analysis of three-phase current type AC-to-DC converter with high power factor

    SciTech Connect

    Okui, Yoshiaki; Yamada, Hajime

    1997-03-01

    A new three-phase current type AC-to-DC converter has been developed by the authors. This paper describes the principle of the circuit operation and the circuit configuration of the AC-to-DC converter controlled by PWM. Simulation analysis of each waveform, such as AC and DC voltages and currents, are calculated by Euler`s method. The simulated values of the total power factor agreed with the measured values within the difference of 5.8% on the condition of full load, 10kW. When the AC side voltage is unbalanced, it is found by simulation that the total harmonic distortion controlled by both feedforward control and AC side current feedback control (proportion gain, k{sub 4} = 1) is restrained at only 38% compared with only feedforward control (k{sub 4} = 0).

  12. High-voltage virtual-cathode microwave simulations

    SciTech Connect

    Thode, L.; Snell, C.M.

    1991-01-01

    In contrast to a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential is sufficiently large to cause electron reflection. The region associated with electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and by reflexing electrons trapped in the potential well formed between the real and virtual cathodes. A virtual-cathode device based on the first mechanism is a vircator while one based on latter mechanism is a reflex diode. A large number of low-voltage virtual-cathode microwave configurations have been investigated. Initial simulations of a high-voltage virtual-cathode device using a self-consistent particle-in-cell code indicated reasonable conversion efficiency with no frequency chirping. The nonchirping character of the high-voltage virtual-cathode device lead to the interesting possibility of locking four very-high-power microwave devices together using the four transmission lines available at Aurora. Subsequently, in support of two high-voltage experiments, simulations were used to investigate the effect of field-emission threshold and velvet position on the cathode; anode and cathode shape; anode-cathode gap spacing; output waveguide radius; diode voltage; a cathode-coaxial-cavity resonator; a high-frequency ac-voltage drive; anode foil scattering and energy loss; and ion emission on the microwave frequency and power. Microwave

  13. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  14. Low-voltage polyphasic circuits

    NASA Astrophysics Data System (ADS)

    Baird, William H.; Jaynes, Michael L.

    2010-05-01

    Experimentation with polyphasic voltages is greatly simplified when microcontrollers are used to generate multiple square waves with fixed phase offsets. Each square wave is sent through a simple second-order Sallen-Key filter to produce an approximately sinusoidal voltage signal. The microcontroller allows the reproduction of split-phase and three-phase voltage relationships, mirroring those commonly distributed on the North American power grid, at safe voltage levels.

  15. Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

    NASA Astrophysics Data System (ADS)

    Bora, B.

    2015-10-01

    On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found to work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage.

  16. Fuzzy efficiency optimization of AC induction motors

    NASA Technical Reports Server (NTRS)

    Jani, Yashvant; Sousa, Gilberto; Turner, Wayne; Spiegel, Ron; Chappell, Jeff

    1993-01-01

    This paper describes the early states of work to implement a fuzzy logic controller to optimize the efficiency of AC induction motor/adjustable speed drive (ASD) systems running at less than optimal speed and torque conditions. In this paper, the process by which the membership functions of the controller were tuned is discussed and a controller which operates on frequency as well as voltage is proposed. The membership functions for this dual-variable controller are sketched. Additional topics include an approach for fuzzy logic to motor current control which can be used with vector-controlled drives. Incorporation of a fuzzy controller as an application-specific integrated circuit (ASIC) microchip is planned.

  17. Modeling of ac dielectric barrier discharge

    SciTech Connect

    Shang, J. S.; Huang, P. G.

    2010-06-15

    The qualitative electrodynamic field of the dielectric barrier discharge in air is studied by a three-component, drift-diffusion plasma model including the Poisson equation of plasmadynamics. The critical media interface boundary conditions independent of the detailed mechanisms of surface absorption, diffusion, recombination, and charge accumulation on electrode or dielectrics are developed from the theory of electromagnetics. The computational simulation duplicates the self-limiting feature of dielectric barrier discharge for preventing corona-to-spark transition, and the numerical results of the breakdown voltage are compared very well with data. According to the present modeling, the periodic electrodynamic force due to charge separation over the electrodes also exerts on alternative directions from the exposed to encapsulated electrodes over a complete ac cycle as experimental observations.

  18. HVDC-AC system interaction from AC harmonics. Volume 1. Harmonic impedance calculations. Final report

    SciTech Connect

    Breuer, G D; Chow, J H; Lindh, C B; Miller, N W; Numrich, F H; Price, W W; Turner, A E; Whitney, R R

    1982-09-01

    Improved methods are needed to characterize ac system harmonic behavior for ac filter design for HVDC systems. The purpose of this General Electric Company RP1138 research is to evaluate the present filter design practice and to investigate methods for calculating system harmonic impedances. An overview of ac filter design for HVDC systems and a survey of literature related to filter design have been performed. Two methods for calculating system harmonic impedances have been investigated. In the measurement method, an instrumentation system for measuring system voltage and current has been assembled. Different schemes of using the measurements to calculate system harmonic impedances have been studied. In the analytical method, a procedure to include various operating conditions has been proposed. Computer programs for both methods have been prepared, and the results of the measurement and analytical methods analyzed. A conclusion of the project is that the measurement and analytical methods both provided reasonable results. There are correlations between the measured and analytical results for most harmonics, although there are discrepancies between the assumptions used in the two methods. A sensitivity approach has been proposed to further correlate the results. From the results of the analysis, it is recommended that both methods should be tested further. For the measurement method, more testing should be done to cover different system operating conditions. In the analytical method, more detailed models for representing system components should be studied. In addition, alternative statistical and sensitivity approaches should be attempted.

  19. Unlikely Combination of Experiments with a Novel High-Voltage CIGS Photovoltaic Array (Presentation)

    SciTech Connect

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    The goals of this study are to: (1) parameterize current-voltage (I-V) performance over a wide range of illumination and temperatures: (a) 50-1150 W/m{sup 2} irradiance, 5-65 C; (b) obtain array temperature coefficients; and (c) quantify energy production; (2) investigate high-voltage leakage currents from the CIS modules in a high-voltage array: determine dependence on moisture, temperature, and voltage bias and ascertain corrosion problems if any; and (3) study long-term power and energy production stability.

  20. Charge-pump voltage converter

    DOEpatents

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  1. Electrical transport properties and current density - voltage characteristic of PVA-Ag nanocomposite film

    NASA Astrophysics Data System (ADS)

    Das, A. K.; Dutta, B.; Sinha, S.; Mukherjee, A.; Basu, S.; Meikap, A. K.

    2016-05-01

    Silver (Ag) nanoparticle and Polyvinyl alcohol (PVA) - Silver (Ag) composite have been prepared and its dielectric constant, ac conductivity, and current density-voltage characteristics have been studied, at and above room temperature. Here correlated barrier hopping found to be the dominant charge transport mechanism with maximum barrier height of 0.11 eV. The sample, under ±5 V applied voltage, show back to back Schottky diode behaviour.

  2. Comparative evaluation of breakdown strength of thin insulating materials under fast transient voltages

    SciTech Connect

    Rajan, J.S.; Dwarakanath, K.

    1996-12-31

    Laboratory methods of generating fast transient over-voltages are discussed in this paper. The results of the breakdown studies carried out with the Transmission line model Generator using plastic materials is presented. The breakdown is observed to be a fast front phenomenon and the electrode effects are critical. The magnitude of the breakdown voltage is one order higher than the corresponding ac and dc values.

  3. Advanced Control Strategy for Single-Phase Voltage-Source Active Rectifier with Low Harmonic Emission

    NASA Astrophysics Data System (ADS)

    Blahník, Vojtĕch; Peroutka, Zdenĕk; Talla, Jakub

    2014-03-01

    This paper introduces the advanced control of single-phase voltage-source active rectifier. This control provide direct control of trolley-wire current and active damping of low-frequency disturbances at the converter ac side. Our proposed control strategy combines PR controller with feed-forward model and low-frequency harmonic compensator based on resonant controllers. Achieved experimental results show excellent converter behavior, where converter is fed by strongly distorted supply voltage.

  4. Identification of /sup 233/Ac

    SciTech Connect

    Chu, Y.Y.; Zhou, M.L.

    1983-09-01

    We report in this paper identification of the new isotope /sup 233/Ac. Uranium targets were irradiated with 28 GeV protons; after rapid retrieval of the target and separation of actinium from thorium, /sup 233/Ac was allowed to decay into the known /sup 233/Th daughter. Exhaustive chemical purification was employed to permit the identification of /sup 233/Th via its characteristic ..gamma.. radiations. The half-life derived for /sup 233/Ac from several experiments is 2.3 +- 0.3 min. The production cross section for /sup 233/Ac is 100 ..mu..b.

  5. Surface potential distribution and airflow performance of different air-exposed electrode plasma actuators at different alternating current/direct current voltages

    SciTech Connect

    Yang, Liang; Yan, Hui-Jie; Qi, Xiao-Hua; Hua, Yue; Ren, Chun-Sheng

    2015-04-15

    Asymmetric surface dielectric barrier discharge (SDBD) plasma actuators have been intensely studied for a number of years due to their potential applications for aerodynamic control. In this paper, four types of actuators with different configurations of exposed electrode are proposed. The SDBD actuators investigated are driven by dual-power supply, referred to as a fixed AC high voltage and an adjustable DC bias. The effects of the electrode structures on the dielectric surface potential distribution, the electric wind velocity, and the mean thrust production are studied, and the dominative factors of airflow acceleration behavior are revealed. The results have shown that the actions of the SDBD actuator are mainly dependent on the geometry of the exposed electrode. Besides, the surface potential distribution can effectively affect the airflow acceleration behavior. With the application of an appropriate additional DC bias, the surface potential will be modified. As a result, the performance of the electric wind produced by a single SDBD can be significantly improved. In addition, the work also illustrates that the actuators with more negative surface potential present better mechanical performance.

  6. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test: Preprint

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-07-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or coulombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  7. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-01-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or culombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  8. Current-biased Transition-edge Sensors Based on Re-entrant Superconductors

    NASA Astrophysics Data System (ADS)

    Gulian, A.; Nikoghosyan, V.; Tollaksen, J.; Vardanyan, V.; Kuzanyan, A.

    Transition-edge sensors are widely recognized as one of the most sensitive tools for the photon and particles detection in many areas, from astrophysics to quantum computing. Their application became practical after understanding that rather than being biased in a constant current mode, they should be biased in a constant voltage mode. Despite the methods of voltage biasing of these sensors are well developed since then, generally the current biasing is more convenient for superconducting circuits. Thus transition-edge sensors designed inherently to operate in the current-biased mode are desirable. We developed a design for such detectors based on re-entrant superconductivity. In this case constant current biasing takes place in the normal state, below the superconducting transition, so that following the absorption of a photon it does not yield a latching. Rather, the sensor gains energy and shifts towards the lower resistant (e.g., superconducting) state, and then cools down faster (since Joule heating is now reduced), and resets in a natural way to be able to detect the next photon. We prototyped this kind of transition edge sensors and tested them operational in accordance with the outlined physics. The samples used in experiments were modified compositions of YBCO-superconductors in a ceramic form (which, as we discovered, reproducibly demonstrates re-entrant superconductivity). In this presentation we report their composition, methods of preparation, and the detection results. This approach, in some areas, may have practical advantage over the traditional voltage-biased devices.

  9. AC Electroosmotic Pumping in Nanofluidic Funnels.

    PubMed

    Kneller, Andrew R; Haywood, Daniel G; Jacobson, Stephen C

    2016-06-21

    We report efficient pumping of fluids through nanofluidic funnels when a symmetric AC waveform is applied. The asymmetric geometry of the nanofluidic funnel induces not only ion current rectification but also electroosmotic flow rectification. In the base-to-tip direction, the funnel exhibits a lower ion conductance and a higher electroosmotic flow velocity, whereas, in the tip-to-base direction, the funnel has a higher ion conductance and a lower electroosmotic flow velocity. Consequently, symmetric AC waveforms easily pump fluid through the nanofunnels over a range of frequencies, e.g., 5 Hz to 5 kHz. In our experiments, the nanofunnels were milled into glass substrates with a focused ion beam (FIB) instrument, and the funnel design had a constant 5° taper with aspect ratios (funnel tip width to funnel depth) of 0.1 to 1.0. We tracked ion current rectification by current-voltage (I-V) response and electroosmotic flow rectification by transport of a zwitterionic fluorescent probe. Rectification of ion current and electroosmotic flow increased with increasing electric field applied to the nanofunnel. Our results support three-dimensional simulations of ion transport and electroosmotic transport through nanofunnels, which suggest the asymmetric electroosmotic transport stems from an induced pressure at the junction of the nanochannel and nanofunnel tip. PMID:27230495

  10. Sensing voltage across lipid membranes

    PubMed Central

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  11. Growth of oxide exchange bias layers

    DOEpatents

    Chaiken, Alison; Michel, Richard P.

    1998-01-01

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

  12. Analysis of bias effects on the total ionizing dose response in a 180 nm technology

    NASA Astrophysics Data System (ADS)

    Liu, Zhangli; Hu, Zhiyuan; Zhang, Zhengxuan; Shao, Hua; Chen, Ming; Bi, Dawei; Ning, Bingxu; Zou, Shichang

    2011-07-01

    The effects of gamma ray irradiation on the shallow trench isolation (STI) leakage current in a 180 nm technology are investigated. The radiation response is strongly influenced by the bias modes, gate bias during irradiation, substrate bias during irradiation and operating substrate bias after irradiation. We found that the worst case occurs under the ON bias condition for the ON, OFF and PASS bias mode. A positive gate bias during irradiation significantly enhances the STI leakage current, indicating the electric field influence on the charge buildup process during radiation. Also, a negative substrate bias during irradiation enhances the STI leakage current. However a negative operating substrate bias effectively suppresses the STI leakage current, and can be used to eliminate the leakage current produced by the charge trapped in the deep STI oxide. Appropriate substrate bias should be introduced to alleviate the total ionizing dose (TID) response, and lead to acceptable threshold voltage shift and subthreshold hump effect. Depending on the simulation results, we believe that the electric field distribution in the STI oxide is the key parameter influencing bias effects on the radiation response of transistor.

  13. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  14. Determination of threshold and maximum operating electric stresses for selected high voltage insulations: Investigation of aged polymeric dielectric cable. Final report

    SciTech Connect

    Eager, G.S. Jr.; Seman, G.W.; Fryszczyn, B.

    1995-11-01

    Based on the successful completion of the extensive research project DOE/ET/29303-1 February 1982 to develop a new method for the determination of threshold voltage in XLPE and EPR insulated cables, tests were initiated to establish the maximum safe operating voltage stresses of crosslinked polyethylene insulated cables that become wet when they operate in a moist environment. The present report covers the measurement of the threshold voltage, the a.c. breakdown voltage and the impulse breakdown voltage of XLPE cable after undergoing accelerated laboratory aging in water. Model and 15 kV XLPE cables were manufactured in commercial equipment using state-of-the-art semiconducting shields and XLPE insulation. The threshold voltage, a.c. voltage breakdown and impulse voltage breakdown of the model cables were determined before aging, after aging one week and after aging 26 weeks. The model cable, following 26 weeks aging, was dried by passing dry gas through the conductor interstices which removed moisture from the cable. The threshold voltage, the a.c. voltage breakdown and the impulse voltage breakdown of the XLPE model cable after drying was measured.

  15. Cooling Floor AC Systems

    NASA Astrophysics Data System (ADS)

    Jun, Lu; Hao, Ding; Hong, Zhang; Ce, Gao Dian

    The present HVAC equipments for the residential buildings in the Hot-summer-and-Cold-winter climate region are still at a high energy consuming level. So that the high efficiency HVAC system is an urgently need for achieving the preset government energy saving goal. With its advantage of highly sanitary, highly comfortable and uniform of temperature field, the hot-water resource floor radiation heating system has been widely accepted. This paper has put forward a new way in air-conditioning, which combines the fresh-air supply unit and such floor radiation system for the dehumidification and cooling in summer or heating in winter. By analyze its advantages and limitations, we found that this so called Cooling/ Heating Floor AC System can improve the IAQ of residential building while keep high efficiency quality. We also recommend a methodology for the HVAC system designing, which will ensure the reduction of energy cost of users.

  16. Automated ac galvanomagnetic measurement system

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Espy, P. N.

    1985-01-01

    An automated, ac galvanomagnetic measurement system is described. Hall or van der Pauw measurements in the temperature range 10-300 K can be made at a preselected magnetic field without operator attendance. Procedures to validate sample installation and correct operation of other system functions, such as magnetic field and thermometry, are included. Advantages of ac measurements are discussed.

  17. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  18. Contamination effects on fixed-bias Langmuir probes.

    PubMed

    Steigies, C T; Barjatya, A

    2012-11-01

    Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region. PMID:23206057

  19. Current-voltage characteristics and parameter retrieval of semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Z. Y.; Jin, C. H.; Liang, X. L.; Chen, Q.; Peng, L.-M.

    2006-02-01

    Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.

  20. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    SciTech Connect

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  1. Improving thrust by pulse-induced breakdown enhancement in AC surface dielectric barrier discharge actuators for airflow control

    NASA Astrophysics Data System (ADS)

    Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

    2016-07-01

    The characteristics of a plate-to-plate AC surface dielectric barrier discharge (SDBD) actuator using the pulse-induced breakdown enhancing method are experimentally investigated. The encapsulated electrode is supplied with a sine high AC voltage, while the exposed electrode is feed by a synchronized pulse voltage. Based on the thrust force and power consumption measurements, a parametric study was performed using a positive pulse applied at the trough phase of the AC cycles in which the thrust force was observed to increase by about 100% to 300% and the efficiency up to about 100% compared with the AC-only supply conditions for different AC voltages within the tested range. The pulse-induced breakdown effect was analyzed from the electrical and light emission waveforms to reveal the underlying mechanism. The surface potential due to the charge deposition effect was also measured using a specially designed corona-like discharge potential probe. It is shown that the pulse-induced breakdown was able to cause a temporarily intensified local electric field to enhance the glow-like discharge and meanwhile increase the time-average surface potential in the region further downstream. The improvement in the force by the enhancement in the pulse-induced breakdown was mainly due to enhancements in the glow-like discharge and the surface potential increment, with the latter being more important when the AC voltage is higher.

  2. Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

    SciTech Connect

    Profijt, H. B.; Sanden, M. C. M. van de; Kessels, W. M. M.

    2013-01-15

    Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al{sub 2}O{sub 3}, Co{sub 3}O{sub 4}, and TiO{sub 2} thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al{sub 2}O{sub 3} films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.

  3. Numerical and theoretical evaluations of AC losses for single and infinite numbers of superconductor strips with direct and alternating transport currents in external AC magnetic field

    NASA Astrophysics Data System (ADS)

    Kajikawa, K.; Funaki, K.; Shikimachi, K.; Hirano, N.; Nagaya, S.

    2010-11-01

    AC losses in a superconductor strip are numerically evaluated by means of a finite element method formulated with a current vector potential. The expressions of AC losses in an infinite slab that corresponds to a simple model of infinitely stacked strips are also derived theoretically. It is assumed that the voltage-current characteristics of the superconductors are represented by Bean’s critical state model. The typical operation pattern of a Superconducting Magnetic Energy Storage (SMES) coil with direct and alternating transport currents in an external AC magnetic field is taken into account as the electromagnetic environment for both the single strip and the infinite slab. By using the obtained results of AC losses, the influences of the transport currents on the total losses are discussed quantitatively.

  4. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    PubMed

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores. PMID:27428174

  5. Back bias induced dynamic and steep subthreshold swing in junctionless transistors

    SciTech Connect

    Parihar, Mukta Singh; Kranti, Abhinav

    2014-07-21

    In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change in drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.

  6. Modelling a single phase voltage controlled rectifier using Laplace transforms

    NASA Technical Reports Server (NTRS)

    Kraft, L. Alan; Kankam, M. David

    1992-01-01

    The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.

  7. Probing Andreev and Majorana States with Voltage Pulses

    NASA Astrophysics Data System (ADS)

    Weston, Joseph; Waintal, Xavier

    We study the effect of time-resolved voltage pulses applied to normal-insulator-superconductor junctions. With the aid of cutting-edge numerical techniques, we see that applying an alternating train of voltage pulses allows us to manipulate the (Andreev) quasi-bound states that form between the insulator and superconductor. When the superconductor is rendered topologically nontrivial, the presence of a Majorana state gives a zero-bias peak (ZBP) in the conductivity of the junction. We show that by applying different amplitudes/frequencies of voltage pulses we can eliminate or recreate the ZBP and hence probe its Majorana character. The persistence of this effect in the presence of finite temperature and moderate disorder is promising for the validation of recent experimental results concerning detection of Majoranas in nanowire-superconductor junctions. This work was supported by the ERC Grant MESOQMC from the European Union.

  8. Low voltage drop plasma switch for inverter and modulator applications

    NASA Astrophysics Data System (ADS)

    Goebel, D. M.; Poeschel, R. L.; Schumacher, R. W.

    1993-08-01

    A low forward voltage drop plasma switch has been developed for high-efficiency inverter and modulator applications. The switch, called the HOLLOTRON, is based on a grid-controlled, thermionic hollow-cathode discharge. A low forward voltage drop (10-20 V) is achieved by operating the hollow-cathode discharge in a static gas pressure of xenon. The dense plasma generated in the Ba-oxide dispenser hollow cathode is spread over a relatively large control grid area by a diverging magnetic field superimposed on the discharge. Interruption of the discharge current at high current densities (≳4 A/cm2) over the grid area is achieved by biasing the control grid sufficiently negative with respect to the plasma. The HOLLOTRON switch has demonstrated voltage stand-off of up to 20 kV, switching times of ≤0.3 μs, and pulse repetition frequencies of 20 kHz at 50% duty.

  9. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  10. System and method for monitoring and controlling stator winding temperature in a de-energized AC motor

    DOEpatents

    Lu, Bin; Luebke, Charles John; Habetler, Thomas G.; Zhang, Pinjia; Becker, Scott K.

    2011-12-27

    A system and method for measuring and controlling stator winding temperature in an AC motor while idling is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of a multi-phase AC motor. The circuit further includes a plurality of switching devices to control current flow and terminal voltages in the multi-phase AC motor and a controller connected to the circuit. The controller is configured to activate the plurality of switching devices to create a DC signal in an output of the motor control device corresponding to an input to the multi-phase AC motor, determine or estimate a stator winding resistance of the multi-phase AC motor based on the DC signal, and estimate a stator temperature from the stator winding resistance. Temperature can then be controlled and regulated by DC injection into the stator windings.

  11. Substation voltage upgrading

    SciTech Connect

    Panek, J.; Elahi, H.; Lux, A.; Imece, A.F. . Power Systems Engineering Dept.); LaPanse, R.A.; Stewart, J.R. )

    1992-04-01

    This report addresses specific issues to support sound yet not unduly conservative uprating practices for substations. The main parts of the report cover the insulation withstand and overvoltage protection aspects, environmental measurements, reliability criteria, and industry experience. First the insulation design concerns are addressed. Substation stress by a backflashover of the line insulation due to lightning in the vicinity of the substation is recognized as a critical stress. A representative part of a 550 kV BIL substation was erected at the EPRI High Voltage Transmission Research Center, where also a special test circuit was assembled to produce a fast front, slow tail (0.2/200 {mu}s) wave. The substation as well as some special configurations were tested for line-to-ground and line-to-line withstand. Computer studies were performed to complement the test results. A number of important conclusions was reached. The most prominent result in that the high frequency oscillations, as caused by reflections within the substation, do not effect the Critical Flashover Voltage (CFO). The present practice, based on the highest peak is therefore very conservative. The slow tail of the wave appears to dictate the CFO. An arrester model for computer studies to represent very fast as well as slow phenomena was derived. It is based on full scale arrester test data, made available in this project. The computer program to calculate arrester model parameters is also a part of the report. The electric environmental measurements are reported for the tested substation at the HVTRC and for the uprated substation of Public Service Company of Colorado, both before and after the uprating. The performance is satisfactory when corona free hardware is used. Insulation design criteria are analyzed based on substation reliability, the system viewpoint and consequences of the failure. Utility experience with uprated substations is reviewed.

  12. Restrictions on TWT Helix Voltage Ripple for Acceptable Notch Filter Performance

    SciTech Connect

    Hyslop, B.

    1984-12-01

    An ac ripple on the helix voltage of the 1-2 GHz TWT's creates FM sidebands that cause amplitude and phase modulation of the microwave TWT output signal. A limit of 16 volts peak-to-peak is required for acceptable superconducting notch filter performance.

  13. Electrically Tunable Quenching of DNA Fluctuations in Biased Solid-State Nanopores.

    PubMed

    Qiu, Hu; Girdhar, Anuj; Schulten, Klaus; Leburton, Jean-Pierre

    2016-04-26

    Nanopores offer sensors for a broad range of nanoscale materials, in particular ones of biological origin such as single- and double-stranded DNA or DNA-protein complexes. In order to increase single-molecule sensitivity, it is desirable to control biomolecule motion inside nanopores. In the present study, we investigate how in the case of a double-stranded DNA the single-molecule sensitivity can be improved through bias voltages. For this purpose we carry out molecular dynamics simulations of the DNA inside nanopores in an electrically biased metallic membrane. Stabilization of DNA, namely, a reduction in thermal fluctuations, is observed under positive bias voltages, while negative voltages bring about only negligible stabilization. For positive biases the stabilization arises from electrostatic attraction between the negatively charged DNA backbone and the positively charged pore surface. Simulations on a teardrop-shaped pore show a transverse shift of DNA position toward the sharp end of the pore under positive bias voltages, suggesting the possibility to control DNA alignment inside nanopores through geometry shaping. The present findings open a feasible and efficient route to reduce thermal noise and, in turn, enhance the signal-to-noise ratio in single-molecule nanopore sensing. PMID:26998639

  14. Automatic bias control system of high speed electro-optic modulator in DPSK Systems

    NASA Astrophysics Data System (ADS)

    Xu, Miao; Tong, Shoufeng; Wang, Dashuai

    2015-04-01

    In DPSK communication system, the traditional way for bias voltage is loading a fixed bias voltage on the electro-optic modulator. For the influence of the temperature changes, the half-wave voltage of the electro-optic modulator may change and the DC bias supply voltage will have a certain degree of random fluctuations at the meantime which will cause the DC bias point of the modulator drift and consequently the communication systems are affected. To enhance the stability of the DPSK optical communication system and control the bias of Mach-Zehnder electro-optic modulators automatically, a PID control method has been proposed in this paper. After the actual operation, a DPSK signal transmission with transfer rate of 5Gb/s is built. Using the complex spectrum analyzer, stable signal and the constellation can be received. The automatic control system basically meets the needs of the DPSK transmission system of high stability, high accuracy and capacity of resisting disturbance.

  15. Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

    NASA Astrophysics Data System (ADS)

    Yen, Cheng-Tyng; Hung, Chien-Chung; Hung, Hsiang-Ting; Lee, Chwan-Ying; Lee, Lurng-Shehng; Huang, Yao-Feng; Hsu, Fu-Jen

    2016-01-01

    We investigated the negative bias temperature instability (NBTI) characteristics of 4H-SiC metal oxide semiconductor field effect transistor (MOSFET) and metal oxide semiconductor capacitor (MOSCAP). The shift of threshold voltage approached saturation with time, and the different magnitude of mid-gap voltage shift with different starting biases observed in capacitance-voltage (CV) curves taken from MOSCAP and MOSFET suggested that the hole trapping was the primary mechanism contributing to the NBTI in this study. The trend of mid-gap voltage shift with starting bias and threshold voltage shift with stress bias showed steep change before -10 V and approached saturation after -10 V which can be explained by a process where the hole trapping was assisted by positively charged interface states. The positively charged interface states may have acted as an intermediate state which reduced the overall energy barrier and facilitated the process of hole trapping. The split-CV sweeps with 0 s and 655 s of hold time were essentially overlapped which was consistent with the time evolution characteristic of hole trapping and supported the interface trap assisted hole trapping mechanism.

  16. Cognitive biases in dermatology training.

    PubMed

    Shokeen, Divya

    2016-07-01

    Cognitive biases are patterns that physicians develop based on predetermined judgments that can influence their decisions regarding patient care. Unfortunately, they are usually encountered on a daily basis in clinics. A few examples include affective, anchoring, availability, confirmation, zebra, and Sutton's biases. PMID:27529715

  17. Variable frequency inverter for ac induction motors with torque, speed and braking control

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1975-01-01

    A variable frequency inverter was designed for driving an ac induction motor which varies the frequency and voltage to the motor windings in response to varying torque requirements for the motor so that the applied voltage amplitude and frequency are of optimal value for any motor load and speed requirement. The slip frequency of the motor is caused to vary proportionally to the torque and feedback is provided so that the most efficient operating voltage is applied to the motor. Winding current surge is limited and a controlled negative slip causes motor braking and return of load energy to a dc power source.

  18. Generator voltage stabilisation for series-hybrid electric vehicles.

    PubMed

    Stewart, P; Gladwin, D; Stewart, J; Cowley, R

    2008-04-01

    This paper presents a controller for use in speed control of an internal combustion engine for series-hybrid electric vehicle applications. Particular reference is made to the stability of the rectified DC link voltage under load disturbance. In the system under consideration, the primary power source is a four-cylinder normally aspirated gasoline internal combustion engine, which is mechanically coupled to a three-phase permanent magnet AC generator. The generated AC voltage is subsequently rectified to supply a lead-acid battery, and permanent magnet traction motors via three-phase full bridge power electronic inverters. Two complementary performance objectives exist. Firstly to maintain the internal combustion engine at its optimal operating point, and secondly to supply a stable 42 V supply to the traction drive inverters. Achievement of these goals minimises the transient energy storage requirements at the DC link, with a consequent reduction in both weight and cost. These objectives imply constant velocity operation of the internal combustion engine under external load disturbances and changes in both operating conditions and vehicle speed set-points. An electronically operated throttle allows closed loop engine velocity control. System time delays and nonlinearities render closed loop control design extremely problematic. A model-based controller is designed and shown to be effective in controlling the DC link voltage, resulting in the well-conditioned operation of the hybrid vehicle. PMID:18262528

  19. Three-Phase and Six-Phase AC at the Lab Bench

    ERIC Educational Resources Information Center

    Caplan, George M.

    2009-01-01

    Utility companies generate three-phase electric power, which consists of three sinusoidal voltages with phase angles of 0 degrees, 120 degrees, and 240 degrees. The ac generators described in most introductory textbooks are single-phase generators, so physics students are not likely to learn about three-phase power. I have developed a simple way…

  20. Classifying sex biased congenital anomalies

    SciTech Connect

    Lubinsky, M.S.

    1997-03-31

    The reasons for sex biases in congenital anomalies that arise before structural or hormonal dimorphisms are established has long been unclear. A review of such disorders shows that patterning and tissue anomalies are female biased, and structural findings are more common in males. This suggests different gender dependent susceptibilities to developmental disturbances, with female vulnerabilities focused on early blastogenesis/determination, while males are more likely to involve later organogenesis/morphogenesis. A dual origin for some anomalies explains paradoxical reductions of sex biases with greater severity (i.e., multiple rather than single malformations), presumably as more severe events increase the involvement of an otherwise minor process with opposite biases to those of the primary mechanism. The cause for these sex differences is unknown, but early dimorphisms, such as differences in growth or presence of H-Y antigen, may be responsible. This model provides a useful rationale for understanding and classifying sex-biased congenital anomalies. 42 refs., 7 tabs.