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Sample records for ac bias voltage

  1. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; Kelley, R.; Kilbourne, C.; Porter, F.; Sadlier, J.; Smith, S.

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  2. Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

    NASA Astrophysics Data System (ADS)

    Volkov, N. V.; Tarasov, A. S.; Smolyakov, D. A.; Varnakov, S. N.; Ovchinnikov, S. G.

    2015-06-01

    We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz. Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface.

  3. An automatic AC/DC thermal voltage converter and AC voltage calibration system

    NASA Astrophysics Data System (ADS)

    Lentner, K. J.; Flach, D. R.; Bell, B. A.

    1985-10-01

    An automatic ac/dc difference calibration system is described which uses direct measurement of thermoelement emfs. In addition to ac/dc difference testing, the system can be used to measure some important characteristics of thermoelements, as well as to calibrate ac voltage calibrators and precision voltmeters. The system operates over a frquency range from 20 Hz to 100 kHz, covering the voltage range from 0.5 V to 1 kv. For all voltages the total measurement uncertainties expected (including the uncertainty of the specific reference thermal converters used) were 50 parts per million (ppm) at frequencies from 20 Hz to 20 kHz, inclusive, and 100 ppm at higher frequencies up to 100 kHz.

  4. Automatic ac/dc thermal voltage converter and ac voltage calibration system

    NASA Astrophysics Data System (ADS)

    Lentner, K. J.; Flach, D. R.; Bell, B. A.

    1984-11-01

    An automatic ac/dc difference calibration system is described which uses direct measurement of thermoelement emfs. In addition to ac/dc difference testing, the system can be used to measure some important characteristics of thermoelements, as well as to calibrate ac voltage calibrators and precision voltmeters. The system operates over a frequency range from 20 Hz to 100 kHz, covering the voltage range from 0.5 V to 1 kv. For all voltages the total measurement uncertainties expected (including the uncertainty of the specific reference thermal converters used) were 50 parts per million (ppm) at frequencies from 20 Hz to 20 kHz, inclusive, and 100 ppm at higher frequencies up to 100 kHz.

  5. Numerical study of dc-biased ac-electrokinetic flow over symmetrical electrodes.

    PubMed

    Yang Ng, Wee; Ramos, Antonio; Cheong Lam, Yee; Rodriguez, Isabel

    2012-03-01

    This paper presents a numerical study of DC-biased AC-electrokinetic (DC-biased ACEK) flow over a pair of symmetrical electrodes. The flow mechanism is based on a transverse conductivity gradient created through incipient Faradaic reactions occurring at the electrodes when a DC-bias is applied. The DC biased AC electric field acting on this gradient generates a fluid flow in the form of vortexes. To understand more in depth the DC-biased ACEK flow mechanism, a phenomenological model is developed to study the effects of voltage, conductivity ratio, channel width, depth, and aspect ratio on the induced flow characteristics. It was found that flow velocity on the order of mm/s can be produced at higher voltage and conductivity ratio. Such rapid flow velocity is one of the highest reported in microsystems technology using electrokinetics. PMID:22662084

  6. Numerical study of dc-biased ac-electrokinetic flow over symmetrical electrodes

    PubMed Central

    Yang Ng, Wee; Ramos, Antonio; Cheong Lam, Yee; Rodriguez, Isabel

    2012-01-01

    This paper presents a numerical study of DC-biased AC-electrokinetic (DC-biased ACEK) flow over a pair of symmetrical electrodes. The flow mechanism is based on a transverse conductivity gradient created through incipient Faradaic reactions occurring at the electrodes when a DC-bias is applied. The DC biased AC electric field acting on this gradient generates a fluid flow in the form of vortexes. To understand more in depth the DC-biased ACEK flow mechanism, a phenomenological model is developed to study the effects of voltage, conductivity ratio, channel width, depth, and aspect ratio on the induced flow characteristics. It was found that flow velocity on the order of mm/s can be produced at higher voltage and conductivity ratio. Such rapid flow velocity is one of the highest reported in microsystems technology using electrokinetics. PMID:22662084

  7. Transient AC voltage related phenomena for HVDC schemes connected to weak AC systems

    SciTech Connect

    Pilotto, L.A.S.; Szechtman, M. ); Hammad, A.E. )

    1992-07-01

    In this paper a didactic explanation of voltage stability associated phenomena at HVDC terminals is presented. Conditions leading to ac voltage collapse problems are identified. A mechanism that excites control-induced voltage oscillations is shown. The voltage stability factor is used for obtaining the maximum power limits of ac/dc systems operating with different control strategies. Correlation to Pd {times} Id curves is given. Solutions for eliminating the risks of voltage collapse and for avoiding control-induced oscillations are discussed. The results are supported by detailed digital simulations of a weak ac/dc system using EMTP.

  8. Interface Circuit for Vibration Energy Harvesting with Adjustable Bias Voltage

    NASA Astrophysics Data System (ADS)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2015-12-01

    This paper presents a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage. An electronic switch is used to modify the circuit configuration so that the harvested energy increases the voltage across a biasing capacitor. Decrease of this biasing capacitor voltage occurs naturally due to the circuit imperfections. Such a control of the bias voltage enables to adjust the amount of energy converted by the variable capacitor on each cycle. This feature can be used to optimize the mechanical damping induced by the energy conversion process in order to maximize the harvested power. Another feature of this interface circuit is that it is capable to get high bias voltage whatever the battery voltage with low energy loss.

  9. Basic concepts of induced AC voltages on pipelines

    SciTech Connect

    Kirkpatrick, E.L.

    1995-07-01

    The phenomena of induced AC on pipelines sharing common rights-of-way with overhead high-voltage electrical transmission power lines is discussed. Basic concepts and techniques for personnel safety and some pipeline protective measures are reviewed.

  10. Bias voltage control of magnetic phase transitions in graphene nanojunctions.

    PubMed

    Luo, Kaikai; Sheng, Weidong

    2015-08-28

    The magnetic state of a spintronic device is usually controlled by magnetic contacts or a transverse electric field generated by side gates. In this work, we consider a graphene nanojunction in the presence of a bias voltage that leads to magnetic phase transitions in the system. Combining the non-equilibrium Green’s function with the Hubbard model, our self consistent calculation reveals that an increasing bias voltage induces consecutive transitions among antiferromagnetic and ferromagnetic states. It is further shown that the graphene nanojunction is turned off in the antiferromagnetic state when the bias voltage is low and can then be switched on to the ferromagnetic state by a high bias voltage. We therefore demonstrate that the magnetic state of the graphene system can be controlled by the bias voltage without resorting to any transverse gates.

  11. Advanced Sensors for Accurate, Broadband AC Voltage Metrology

    NASA Astrophysics Data System (ADS)

    Lipe, Thomas E.; Kinard, Joseph R.; Novotny, Donald B.; Sims, June E.

    2013-06-01

    We report on advances in ac voltage metrology made possible by a new generation of Multijunction Thermal Converters (MJTCs). Although intended for use primarily in high-frequency (1 MHz to 100 MHz) metrology, their exceptional low-frequency qualities, combined with a large dynamic range, makes these MJTCs excellent devices for the frequency range 10 Hz to 100 MHz at voltages from 1 V to 20 V, depending on the design. We anticipate that these devices will form the future basis for ac voltage metrology at the National Institute of Standards and Technology (NIST).

  12. Fast recovery, high voltage silicon diodes for AC motor controllers

    NASA Technical Reports Server (NTRS)

    Balodis, V.; Berman, A. H.; Gaugh, C.

    1982-01-01

    The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

  13. Diagnostic of water trees using DC and AC voltages

    SciTech Connect

    Romero, P.; Puerta, J.

    1996-12-31

    Electric tools for non-destructive water tree diagnostic in XLPE medium voltage cables, by means of DC and AC voltages are presented. The DC method is related to the determination of a non-linear dependence of the polarization current on the applied DC step voltage, in contrast to a linear dependence found in non-water tree-damaged cables. In both cases the current follows the Curie-von Schweidler empirical law, I(t) = I{sub 0}t{sup {minus}n}. The AC method is based on the measurement of the dispersion relation of both the loss factor and the capacitance in the low and very low frequency ranges by means of the Fourier Transform techniques. The devised measuring instrumentation is presented.

  14. Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Jin; Kim, Jae Young; Kim, Jae Hyun; Kim, Dong Ha; Lee, Duck-Sik; Park, Choon-Sang; Park, Hyung Dal; Shin, Bhum Jae; Tae, Heung-Sik

    2015-12-01

    In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

  15. Strongly nonlinear dynamics of electrolytes in large ac voltages.

    PubMed

    Højgaard Olesen, Laurits; Bazant, Martin Z; Bruus, Henrik

    2010-07-01

    We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two features--significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of "ac capacitive desalination" since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and collapse of space-charge layers, even in the absence of any net Faradaic current through the cell. We also predict that steric effects of finite ion sizes (going beyond dilute-solution theory) act to suppress the strongly nonlinear regime in the limit of concentrated electrolytes, ionic liquids, and molten salts. Beyond the model problem, our reduced equations for thin double layers, based on uniformly valid matched asymptotic expansions, provide a useful mathematical framework to describe additional nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena.

  16. Moderately nonlinear diffuse-charge dynamics under an ac voltage.

    PubMed

    Stout, Robert F; Khair, Aditya S

    2015-09-01

    The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer. PMID:26465471

  17. Strongly nonlinear dynamics of electrolytes in large ac voltages

    NASA Astrophysics Data System (ADS)

    Højgaard Olesen, Laurits; Bazant, Martin Z.; Bruus, Henrik

    2010-07-01

    We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two features—significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of “ac capacitive desalination” since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and collapse of space-charge layers, even in the absence of any net Faradaic current through the cell. We also predict that steric effects of finite ion sizes (going beyond dilute-solution theory) act to suppress the strongly nonlinear regime in the limit of concentrated electrolytes, ionic liquids, and molten salts. Beyond the model problem, our reduced equations for thin double layers, based on uniformly valid matched asymptotic expansions, provide a useful mathematical framework to describe additional nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena.

  18. Nonlinear oscillations in an electrolyte solution under ac voltage.

    PubMed

    Schnitzer, Ory; Yariv, Ehud

    2014-03-01

    The response of an electrolyte solution bounded between two blocking electrodes subjected to an ac voltage is considered. We focus on the pertinent thin-double-layer limit, where this response is governed by a reduced dynamic model [L. Højgaard Olesen, M. Z. Bazant, and H. Bruus, Phys. Rev. E 82, 011501 (2010)]. During a transient stage, the system is nonlinearly entrained towards periodic oscillations of the same frequency as that of the applied voltage. Employing a strained-coordinate perturbation scheme, valid for moderately large values of the applied voltage amplitude V, we obtain a closed-form asymptotic approximation for the periodic orbit which is in remarkable agreement with numerical computations. The analysis elucidates the nonlinear characteristics of the system, including a slow (logarithmic) growth of the zeta-potential amplitude with V and a phase straining scaling as V-1lnV. In addition, an asymptotic current-voltage relation is provided, capturing the numerically observed rapid temporal variations in the electric current. PMID:24730837

  19. Threshold voltage for arcing on negatively biased solar arrays

    NASA Technical Reports Server (NTRS)

    Hastings, Daniel E.; Weyl, Guy; Kaufman, Donald

    1990-01-01

    The arcing that has been found to occur when negatively biased high-voltage solar arrays in LEO lie at a critical voltage with respect to the plasma environment is presently proposed to be due to a breakdown of gas emitted under electron bombardment from the solar cells' cover-glass. The elements of the model for this phenomenon include an electron current flow from the interconnect to a neighboring cover-glass, which desorbs neutral molecules under the electron bombardment. The neutral molecules form a gas over the interconnect, and this gas breaks down when the voltage over the interconnect is sufficiently high. Specific scaling predictions are made on the basis of the geometric structure and gas in question.

  20. Effect of low voltage AC fields on cardiovascular implants.

    PubMed

    Kothandaraman, Anjana; Anson, Tony; Reynolds, Alan

    2015-01-01

    Coronary Artery Stents have been the preferred form of treatment for vascular occlusive disease, due to the minimally invasive surgical procedure, post-operative recovery time and cost, when compared to open coronary bypass surgery. The cellular response upon applying an AC electric field to type 316LM Stainless Steel stent mimics was investigated in this paper. The highest RBC adhesion was observed at voltages higher than 88 mV and lower than 74 mV. Their unique alignment along the lines of fracture on the stent surface at 88 mV was a phenomenon caused by an increase in electrical conductivity in these regions. Being able to control RBC adhesion may have various clinical implications such as inhibition of thrombus formation, and provide a basis to analyse whether electric fields may be applied to cancer therapy as well.

  1. Antenna-coupled arrays of voltage-biased superconducting bolometers

    SciTech Connect

    Myers, Michael J.; Lee, Adrian T.; Richards, P.L.; Schwan, D.; Skidmore, J.T.; Smith, A.D.; Spieler, H.; Yoon, Jongsoo

    2001-07-23

    We report on the development of antenna-coupled Voltage-biased Superconducting Bolometers (VSBs) which use Transition-edge Sensors (TES). Antenna coupling can greatly simplify the fabrication of large multi-frequency bolometer arrays compared to horn-coupled techniques. This simplification can make it practical to implement 1000+ element arrays that fill the focal plane of mm/sub-mm wave telescopes. We have designed a prototype device with a double-slot dipole antenna, integrated band-defining filters, and a membrane-suspended bolometer. A test chip has been constructed and will be tested shortly.

  2. Focal Plane Arrays of Voltage-Biased Superconducting Bolometers

    NASA Technical Reports Server (NTRS)

    Myers, Michael J.; Clarke, John; Gildemeister, J. M.; Lee, Adrian T.; Richards, P. L.; Schwan, Dan; Skidmore, J. T.; Spieler, Helmuth; Yoon, Jongsoo

    2001-01-01

    The 200-micrometer to 3-mm wavelength range has great astronomical and cosmological significance. Science goals include characterization of the cosmic microwave background, measurement of the Sunyaev-Zel'dovich effect in galaxy clusters, and observations of forming galaxies. Cryogenic bolometers are the most sensitive broadband detectors in this frequency range. Because single bolometer pixels are reaching the photon noise limit for many observations, the development of large arrays will be critical for future science progress. Voltage-biased superconducting bolometers (VSBs) have several advantages compared to other cryogenic bolometers. Their strong negative electrothermal feedback enhances their linearity, speed, and stability. The large noise margin of the SQUID readout enables multiplexed readout schemes, which are necessary for developing large arrays. In this paper, we discuss the development of a large absorber-coupled array, a frequency-domain SQUID readout multiplexer, and an antenna-coupled VSB design.

  3. Improved optogalvanic detection with voltage biased Langmuir probes

    SciTech Connect

    Persson, A.; Salehpour, M.; Berglund, M.

    2014-12-28

    Optogalvanic detectors show great potential for infrared spectroscopy, especially in cavity enhanced techniques where they, in contrast to ordinary absorption detectors, can perform intracavity measurements. This enables them to utilize the signal-to-noise ratio improvement gained from the extended effective path length inside an optical cavity, without losing signal strength due to the limited amount of light exiting through the rear mirror. However, if optogalvanic detectors are to become truly competitive, their intrinsic sensitivity and stability has to be improved. This, in turn, requires a better understanding of the mechanisms behind the generation of the optogalvanic signal. The study presented here focuses on an optogalvanic detector based on a miniaturized stripline split-ring resonator plasma source equipped with Langmuir probes for detecting the optogalvanic signal. In particular, the effect of applying a constant bias voltage to one of the probes is investigated, both with respect to the sensitivity and stability, and to the mechanism behind the generation of the signal. Experiments with different bias voltages at different pressures and gas composition have been conducted. In particular, two different gas compositions (pure CO{sub 2} and 0.25% CO{sub 2} in 99.75% N{sub 2}) at six different pressures (100 Pa to 600 Pa) have been studied. It has been shown that probe biasing effectively improves the performance of the detector, by increasing the amplitude of the signal linearly over one order of magnitude, and the stability by about 40% compared with previous studies. Furthermore, it has been shown that relatively straightforward plasma theory can be applied to interpret the mechanism behind the generation of the signal, although additional mechanisms, such as rovibrational excitation from electron-molecule collisions, become apparent in CO{sub 2} plasmas with electron energies in the 1–6 eV range. With the achieved performance improvement and

  4. Improved optogalvanic detection with voltage biased Langmuir probes

    NASA Astrophysics Data System (ADS)

    Persson, A.; Berglund, M.; Salehpour, M.

    2014-12-01

    Optogalvanic detectors show great potential for infrared spectroscopy, especially in cavity enhanced techniques where they, in contrast to ordinary absorption detectors, can perform intracavity measurements. This enables them to utilize the signal-to-noise ratio improvement gained from the extended effective path length inside an optical cavity, without losing signal strength due to the limited amount of light exiting through the rear mirror. However, if optogalvanic detectors are to become truly competitive, their intrinsic sensitivity and stability has to be improved. This, in turn, requires a better understanding of the mechanisms behind the generation of the optogalvanic signal. The study presented here focuses on an optogalvanic detector based on a miniaturized stripline split-ring resonator plasma source equipped with Langmuir probes for detecting the optogalvanic signal. In particular, the effect of applying a constant bias voltage to one of the probes is investigated, both with respect to the sensitivity and stability, and to the mechanism behind the generation of the signal. Experiments with different bias voltages at different pressures and gas composition have been conducted. In particular, two different gas compositions (pure CO2 and 0.25% CO2 in 99.75% N2) at six different pressures (100 Pa to 600 Pa) have been studied. It has been shown that probe biasing effectively improves the performance of the detector, by increasing the amplitude of the signal linearly over one order of magnitude, and the stability by about 40% compared with previous studies. Furthermore, it has been shown that relatively straightforward plasma theory can be applied to interpret the mechanism behind the generation of the signal, although additional mechanisms, such as rovibrational excitation from electron-molecule collisions, become apparent in CO2 plasmas with electron energies in the 1-6 eV range. With the achieved performance improvement and the more solid theoretical

  5. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    SciTech Connect

    Jordan, Paul M. Simon, Daniel K.; Dirnstorfer, Ingo; Mikolajick, Thomas

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  6. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    NASA Astrophysics Data System (ADS)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+‑434.81 nm and Ar+‑442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m‑3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  7. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    NASA Astrophysics Data System (ADS)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+-434.81 nm and Ar+-442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m-3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  8. A Numerical Simulation Of The Pulse Sequence Reconstruction in AC Biased TESs With a {beta} Source

    SciTech Connect

    Ferrari, Lorenza; Vaccarone, Renzo

    2009-12-16

    We study the response of micro-calorimeters based on Ir/Au TESs biased by an AC voltage in the MHz range to the power input generated by beta emission in a Re source thermally connected to the calorimeter itself. The micro-calorimeter is assumed to work at -80 mK, and the energy pulses corresponding to the beta emission have an energy distributed between zero and 2.58 KeV. In this numerical simulation the TES is inserted in a RLC resonating circuit, with a low quality factor. The thermal conductivities between the source and the calorimeter and that from the calorimeter to the heat sink are non-linear. The superconducting to normal transition of the TES is described by a realistic non-linear model. The AC current at the carrier frequency, modulated by the changing resistance of the TES, is demodulated and the output is filtered. The resulting signal is analyzed to deduce the attainable time resolution and the linearity of the response.

  9. QPSK modulation for AC-power-signal-biased visible light communication system

    NASA Astrophysics Data System (ADS)

    Liu, Yu-Feng; Yeh, Chien-Hung; Chow, Chi-Wai; Liu, Yang

    2013-01-01

    With the integration of light emitting diode (LED), visible light communication (VLC) can provide wireless communication link using the lightning system. Due to the consideration of power efficiency, AC-LED has the design of reducing energy waste with alternating current from the power outlet. In this work, we propose an AC-power-signalbiased system that provides communication on both DC-LED and AC-LED. The bias circuit is designed to combine ACpower signal and the message signal with QPSK format. This driving scheme needs no AC-to-DC converters and it is suitable for driving AC LED. Synchronization is completed to avoid threshold effect of LED.

  10. Phase-sensitive detection of both inductive and non-inductive ac voltages in ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Weiler, Mathias; Shaw, Justin M.; Nembach, Hans T.; Schoen, Martin A.; Boone, Carl T.; Silva, Thomas J.

    2014-03-01

    Spin pumping causes significant damping in ultrathin ferromagnetic/normal metal (NM) multilayers via spin-current generation of both dc and ac character in the NM system. While the nonlinear dc component has been investigated in detail by utilization of the inverse spin Hall effect (iSHE) in NMs, much less is known about the linear ac component that is presumably much larger in the small-excitation limit. We measured generated ac voltages in a wide variety of Permalloy/NM multilayers via vector-network-analyzer ferromagnetic resonance. We employ a custom, impedance-matched, broadband microwave coupler that features a ferromagnetic thin film reference resonator to accurately compare ac voltage amplitudes and phases between varieties of multilayers. By use of the fact that inductive and ac iSHE signals are phase-shifted by π/2, we find that inductive signals are major contributors in all investigated samples. It is only by comparison of the phase and amplitude of the recorded ac voltages between multiple samples that we can extract the non-inductive contributions due to spin-currents. Voltages due to the ac iSHE in Permalloy(10nm)/platinum(5nm) bilayers are weaker than inductive signals, in agreement with calculations based upon recent theoretical predictions. M.W. acknowledges financial support by the German Academic Exchange service (DAAD).

  11. New internal multi-range resistors for ac voltage calibration by using TVC

    NASA Astrophysics Data System (ADS)

    Ali, Rasha S. M.

    2015-10-01

    Accurate calibration of ac voltages up to 1000 V by using thermal converters requires range resistors connected in series with the converter. The combination of a thermal converter and range resistor is known as the thermal voltage converter. In this paper, multi-range internal range resistors are designed and implemented in the National Institute for Standards (NIS), Egypt to cover the ac voltage ranges from 10 V to 750 V. The range resistor values are 2 kΩ, 10 kΩ, 20 kΩ, 40 kΩ, 100 kΩ, and 150 kΩ to cover the voltage ranges 10 V, 50 V, 100 V, 200 V, 500 V, and 750 V, respectively. The six range resistors are mounted in series with a single-junction thermo-element in the same box to provide a new thermal voltage converter. The required range resistor is selected by using a six-pin selector switch. Each resistor is connected to a selector pin. The new thermal voltage converter ranges are automatically calibrated against other standard thermal voltage converters at different frequencies by using a LabVIEW program to determine their ac-dc transfer difference at each range. The expanded uncertainties are estimated according to the GUM for all ranges at different frequencies. The performance of the new thermal voltage converter is also evaluated by comparing its ac-dc differences and its accuracy in measuring the ac voltage at different frequencies with a traditional thermal voltage converter.

  12. A Generalised Fault Protection Structure Proposed for Uni-grounded Low-Voltage AC Microgrids

    NASA Astrophysics Data System (ADS)

    Bui, Duong Minh; Chen, Shi-Lin; Lien, Keng-Yu; Jiang, Jheng-Lun

    2016-04-01

    This paper presents three main configurations of uni-grounded low-voltage AC microgrids. Transient situations of a uni-grounded low-voltage (LV) AC microgrid (MG) are simulated through various fault tests and operation transition tests between grid-connected and islanded modes. Based on transient simulation results, available fault protection methods are proposed for main and back-up protection of a uni-grounded AC microgrid. In addition, concept of a generalised fault protection structure of uni-grounded LVAC MGs is mentioned in the paper. As a result, main contributions of the paper are: (i) definition of different uni-grounded LVAC MG configurations; (ii) analysing transient responses of a uni-grounded LVAC microgrid through line-to-line faults, line-to-ground faults, three-phase faults and a microgrid operation transition test, (iii) proposing available fault protection methods for uni-grounded microgrids, such as: non-directional or directional overcurrent protection, under/over voltage protection, differential current protection, voltage-restrained overcurrent protection, and other fault protection principles not based on phase currents and voltages (e.g. total harmonic distortion detection of currents and voltages, using sequence components of current and voltage, 3I0 or 3V0 components), and (iv) developing a generalised fault protection structure with six individual protection zones to be suitable for different uni-grounded AC MG configurations.

  13. In-Plane Electric Polarization of Bilayer Graphene Nanoribbons Induced by an Interlayer Bias Voltage.

    PubMed

    Okugawa, Ryo; Tanaka, Junya; Koretsune, Takashi; Saito, Susumu; Murakami, Shuichi

    2015-10-01

    We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate that when the bias voltage is weak, the polarization shows opposite signs depending on the ribbon width modulo three. This nontrivial dependence is explained using a two-band effective model. A strong limit of the bias voltage in the tight-binding model shows either one-third or zero polarization, which agrees with the topological argument. PMID:26550741

  14. In-Plane Electric Polarization of Bilayer Graphene Nanoribbons Induced by an Interlayer Bias Voltage.

    PubMed

    Okugawa, Ryo; Tanaka, Junya; Koretsune, Takashi; Saito, Susumu; Murakami, Shuichi

    2015-10-01

    We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate that when the bias voltage is weak, the polarization shows opposite signs depending on the ribbon width modulo three. This nontrivial dependence is explained using a two-band effective model. A strong limit of the bias voltage in the tight-binding model shows either one-third or zero polarization, which agrees with the topological argument.

  15. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  16. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    NASA Astrophysics Data System (ADS)

    E, Lotfi; H, Rezania; B, Arghavaninia; M, Yarmohammadi

    2016-07-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

  17. High voltage AC/AC electrochemical capacitor operating at low temperature in salt aqueous electrolyte

    NASA Astrophysics Data System (ADS)

    Abbas, Qamar; Béguin, François

    2016-06-01

    We demonstrate that an activated carbon (AC)-based electrochemical capacitor implementing aqueous lithium sulfate electrolyte in 7:3 vol:vol water/methanol mixture can operate down to -40 °C with good electrochemical performance. Three-electrode cell investigations show that the faradaic contributions related with hydrogen chemisorption in the negative AC electrode are thermodynamically unfavored at -40 °C, enabling the system to work as a typical electrical double-layer (EDL) capacitor. After prolonged floating of the AC/AC capacitor at 1.6 V and -40°C, the capacitance, equivalent series resistance and efficiency remain constant, demonstrating the absence of ageing related with side redox reactions at this temperature. Interestingly, when temperature is increased back to 24 °C, the redox behavior due to hydrogen storage reappears and the system behaves as a freshly prepared one.

  18. The effect of bias voltage on the morphology and wettability of plasma deposited titanium oxide films

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Li, Yan; Guo, Kai; Zhang, Jing

    2008-02-01

    Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF--PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC 3H 7) 4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30°. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).

  19. Cryocooler operation of SNIS Josephson arrays for AC Voltage standards

    NASA Astrophysics Data System (ADS)

    Sosso, A.; De Leo, N.; Fretto, M.; Monticone, E.; Roncaglione, L.; Rocci, R.; Lacquaniti, V.

    2014-05-01

    Avoiding liquid helium is now a worldwide issue, thus cryocooler operation is becoming mandatory for a wider use of superconductive electronics. Josephson voltage standards hold a peculiar position among superconducting devices, as they are in use in high precision voltage metrology since decades. Higher temperature operation would reduce the refrigerator size and complexity, however, arrays of Josephson junctions made with high temperature superconductors for voltage standard applications are not to date available. The SNIS (Superconductor-Normal metal-Insulator-Superconductor) junction technology developed at INRIM, based on low temperature superconductors, but capable of operation well above liquid helium temperature, is interesting for application to a compact cryocooled standard, allowing to set a compromise between device and refrigerator requirements. In this work, the behavior of SNIS devices cooled with a closed-cycle refrigerator has been investigated, both in DC and under RF irradiation. Issues related to thermal design of the apparatus to solve specific problems not faced with liquid coolants, like reduced cooling power and minimization of thermal gradients for uniform operation of the chip are discussed in detail.

  20. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  1. Development of Low-Frequency AC Voltage Measurement System Using Single-Junction Thermal Converter

    NASA Astrophysics Data System (ADS)

    Amagai, Yasutaka; Nakamura, Yasuhiro

    Accurate measurement of low-frequency AC voltage using a digital multimeter at frequencies of 4-200Hz is a challenge in the mechanical engineering industry. At the National Metrology Institute of Japan, we developed a low-frequency AC voltage measurement system for calibrating digital multimeters operating at frequencies down to 1 Hz. The system uses a single-junction thermal converter and employs a theoretical model and a three-parameter sine wave fitting algorithm based on the least-square (LS) method. We calibrated the AC voltage down to 1Hz using our measurement system and reduced the measurement time compared with that using thin-film thermal converters. Our measurement results are verified by comparison with those of a digital sampling method using a high-resolution analog-to-digital converter; our data are in agreement to within a few parts in 105. Our proposed method enables us to measure AC voltage with an uncertainty of 25 μV/V (k = 1) at frequencies down to 4 Hz and a voltage of 10 V.

  2. Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

    NASA Astrophysics Data System (ADS)

    Maeda, Takuya; Okada, Masaya; Ueno, Masaki; Yamamoto, Yoshiyuki; Horita, Masahiro; Suda, Jun

    2016-09-01

    The photocurrent of GaN vertical Schottky barrier diodes was investigated under sub-bandgap wavelength light irradiation. Under a low reverse bias voltage, the photocurrent is induced by internal photoemission, while under a high reverse bias voltage, the photocurrent increases significantly with the bias voltage. This is due to sub-bandgap optical absorption in a depletion region due to the Franz–Keldysh effect. The voltage and wavelength dependences of the photocurrent are successfully explained quantitatively.

  3. Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

    NASA Astrophysics Data System (ADS)

    Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

    We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

  4. Effects of DC bias voltages on the RF-excited plasma-tissue interaction

    NASA Astrophysics Data System (ADS)

    Yang, Aijun; Liu, Dingxin; Wang, Xiaohua; Li, Jiafeng; Chen, Chen; Rong, Mingzhe; Kong, Michael G.

    2016-10-01

    We present in this study how DC bias voltage impacts on the fluxes of reactive species on the skin tissue by means of a plasma-tissue interaction model. The DC bias voltage inputs less than 2% of the total discharge power, and hence it has little influence on the whole plasma characteritics including the volume-averaged densities of reactive species and the heating effect. However, it pushes the plasma bulk towards the skin surface, which significantly changes the local plasma characteristics in the vicinity of the skin surface, and in consequence remarkably enhances the flux densities of reactive species on the skin tissue. With the consideration of plasma dosage and heat damage on the skin tissue, DC bias voltage is a better approach compared with the common approach of increasing the plasma power. Since the DC voltage is easy to apply on the human body, it is a promising approach for use in clincial applications.

  5. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  6. Nonlinear magnetization relaxation of superparamagnetic nanoparticles in superimposed ac and dc magnetic bias fields

    NASA Astrophysics Data System (ADS)

    Titov, Serguey V.; Déjardin, Pierre-Michel; El Mrabti, Halim; Kalmykov, Yuri P.

    2010-09-01

    The nonlinear ac response of the magnetization M(t) of a uniaxially anisotropic superparamagnetic nanoparticle subjected to both ac and dc bias magnetic fields of arbitrary strengths and orientations is determined by averaging Gilbert’s equation augmented by a random field with Gaussian white-noise properties in order to calculate exactly the relevant statistical averages. It is shown that the magnetization dynamics of the uniaxial particle driven by a strong ac field applied at an angle to the easy axis of the particle (so that the axial symmetry is broken) alters drastically leading to different nonlinear effects due to coupling of the thermally activated magnetization reversal mode with the precessional modes of M(t) via the driving ac field.

  7. Building the analytical response in frequency domain of AC biased bolometers - Application to Planck/HFI

    NASA Astrophysics Data System (ADS)

    Sauvé, Alexandre; Montier, Ludovic

    2016-10-01

    uc(Context): Bolometers are high sensitivity detector commonly used in Infrared astronomy. The HFI instrument of the Planck satellite makes extensive use of them, but after the satellite launch two electronic related problems revealed critical. First an unexpected excess response of detectors at low optical excitation frequency for ν < 1 Hz, and secondly the Analog To digital Converter (ADC) component had been insufficiently characterized on-ground. These two problems require an exquisite knowledge of detector response. However bolometers have highly nonlinear characteristics, coming from their electrical and thermal coupling making them very difficult to model. uc(Goal): We present a method to build the analytical transfer function in frequency domain which describe the voltage response of an Alternative Current (AC) biased bolometer to optical excitation, based on the standard bolometer model. This model is built using the setup of the Planck/HFI instrument and offers the major improvement of being based on a physical model rather than the currently in use had-hoc model based on Direct Current (DC) bolometer theory. uc(Method): The analytical transfer function expression will be presented in matrix form. For this purpose, we build linearized versions of the bolometer electro thermal equilibrium. A custom description of signals in frequency is used to solve the problem with linear algebra. The model performances is validated using time domain simulations. uc(Results): The provided expression is suitable for calibration and data processing. It can also be used to provide constraints for fitting optical transfer function using real data from steady state electronic response and optical response. The accurate description of electronic response can also be used to improve the ADC nonlinearity correction for quickly varying optical signals.

  8. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

    NASA Astrophysics Data System (ADS)

    Demirezen, S.; Kaya, A.; Yerişkin, S. A.; Balbaşı, M.; Uslu, İ.

    In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε‧, ε‧, tanδ, electric modulus (M‧ and M″) and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε‧, ε‧, tanδ, M‧, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε‧, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε‧ and ε″ values at low frequencies may be attributed to the Maxwell-Wagner and space charge polarization. The high values of ε‧ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M‧ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M‧ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε‧, ε″, tanδ, M‧, M″ and ac electric conductivity (σac) is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization.

  9. Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces

    PubMed Central

    Wilks, Seth J.; Richner, Tom J.; Brodnick, Sarah K.; Kipke, Daryl R.; Williams, Justin C.; Otto, Kevin J.

    2012-01-01

    Electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measure properties of the electrode-tissue interface without additional invasive procedures, and can be used to monitor electrode performance over the long term. EIS measures electrical impedance at multiple frequencies, and increases in impedance indicate increased glial scar formation around the device, while cyclic voltammetry measures the charge carrying capacity of the electrode, and indicates how charge is transferred at different voltage levels. As implanted electrodes age, EIS and CV data change, and electrode sites that previously recorded spiking neurons often exhibit significantly lower efficacy for neural recording. The application of a brief voltage pulse to implanted electrode arrays, known as rejuvenation, can bring back spiking activity on otherwise silent electrode sites for a period of time. Rejuvenation alters EIS and CV, and can be monitored by these complementary methods. Typically, EIS is measured daily as an indication of the tissue response at the electrode site. If spikes are absent in a channel that previously had spikes, then CV is used to determine the charge carrying capacity of the electrode site, and rejuvenation can be applied to improve the interface efficacy. CV and EIS are then repeated to check the changes at the electrode-tissue interface, and neural recordings are collected. The overall goal of rejuvenation is to extend the functional lifetime of implanted arrays. PMID:22395095

  10. Voltage-Biased Magnetic Sensors Based on Tuned Varistors

    NASA Astrophysics Data System (ADS)

    Pandey, R. K.; Stapleton, William. A.; Sutanto, Ivan; Shamsuzzoha, M.

    2015-04-01

    In this paper, we explore the possibility of finding practical applications when the nonlinear current-voltage ( I- V) characteristics of a varistor are modified by the application of external magnetic fields. With this goal in mind, varistors based on a pseudobrookite oxide semiconductor have been studied. Pseudobrookite (PsB) is a wide bandgap n-type semiconductor with the bandgap of 2.77 eV. It is also weakly ferromagnetic. The "voltage-dependent resistor" (VDR) mode of the magnetically-tuned pseudobrookite varistors offers an opportunity to advance magnetic sensor technology. The resistive and magnetoresistive parameters of PsB VDRs exhibit good responses to applied magnetic fields and they can therefore be the basis for the fabrication of simple yet practical magnetic sensors. These sensors can cover the range of magnetic fields between 0 and 4500 Oe with good accuracy, and could possibly be considered as a substitute for Hall Effect-based sensors for many applications. Also, due to their simple structure, they would be rugged and not susceptible to abuses. They may also be suitable for applications in hazardous environments such as high temperatures and atmospheres having the presence of radiation, such as neutrons, protons, etc. It is also possible that these novel sensors could be suitable for geological applications such as in well logging in search of energy sources.

  11. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    PubMed Central

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-01-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction. PMID:27759080

  12. Zero-bias features and ``Shapiro-like'' steps in the current-voltage characteristics of an SN structure.

    NASA Astrophysics Data System (ADS)

    Roshchin, Igor V.; Shnirman, Alexander

    2000-03-01

    Using the tunneling Hamiltonian method proposed by Hekking and Nazarov(F. W. J. Hekking and Y. V. Nazarov, Physical Review B 49), 6847 (1994) we consider contribution of the Andreev reflection to the current through SN interfaces. Application of an external ac field results in steps in the current-voltage characteristics at Vn = nπ hbar /2e. Shape of the steps is determined by the shape of the dc current zero-bias conductance peak (ZBCP) arising due to the multiple Andreev reflections. We discuss the influence of temperature, strength, and sign of the electron-electron interaction and other parameters of the normal metal on the ZBCP and the steps. Experimental parameters of a highly-doped n^+-InAs are used to obtain estimates for proposed experiments.

  13. Magnetic nanoparticle thermometer: an investigation of minimum error transmission path and AC bias error.

    PubMed

    Du, Zhongzhou; Su, Rijian; Liu, Wenzhong; Huang, Zhixing

    2015-04-14

    The signal transmission module of a magnetic nanoparticle thermometer (MNPT) was established in this study to analyze the error sources introduced during the signal flow in the hardware system. The underlying error sources that significantly affected the precision of the MNPT were determined through mathematical modeling and simulation. A transfer module path with the minimum error in the hardware system was then proposed through the analysis of the variations of the system error caused by the significant error sources when the signal flew through the signal transmission module. In addition, a system parameter, named the signal-to-AC bias ratio (i.e., the ratio between the signal and AC bias), was identified as a direct determinant of the precision of the measured temperature. The temperature error was below 0.1 K when the signal-to-AC bias ratio was higher than 80 dB, and other system errors were not considered. The temperature error was below 0.1 K in the experiments with a commercial magnetic fluid (Sample SOR-10, Ocean Nanotechnology, Springdale, AR, USA) when the hardware system of the MNPT was designed with the aforementioned method.

  14. Magnetic Nanoparticle Thermometer: An Investigation of Minimum Error Transmission Path and AC Bias Error

    PubMed Central

    Du, Zhongzhou; Su, Rijian; Liu, Wenzhong; Huang, Zhixing

    2015-01-01

    The signal transmission module of a magnetic nanoparticle thermometer (MNPT) was established in this study to analyze the error sources introduced during the signal flow in the hardware system. The underlying error sources that significantly affected the precision of the MNPT were determined through mathematical modeling and simulation. A transfer module path with the minimum error in the hardware system was then proposed through the analysis of the variations of the system error caused by the significant error sources when the signal flew through the signal transmission module. In addition, a system parameter, named the signal-to-AC bias ratio (i.e., the ratio between the signal and AC bias), was identified as a direct determinant of the precision of the measured temperature. The temperature error was below 0.1 K when the signal-to-AC bias ratio was higher than 80 dB, and other system errors were not considered. The temperature error was below 0.1 K in the experiments with a commercial magnetic fluid (Sample SOR-10, Ocean Nanotechnology, Springdale, AR, USA) when the hardware system of the MNPT was designed with the aforementioned method. PMID:25875188

  15. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    NASA Astrophysics Data System (ADS)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-12-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  16. Structure and properties of TiAlLaN films deposited at various bias voltages

    NASA Astrophysics Data System (ADS)

    Du, Hao; Xiong, Ji; Zhao, Haibo; Wu, Yuemei; Wan, Weicai; Wang, Linlin

    2014-02-01

    The TiAlLaN films were deposited on YG8 and silicon (1 1 1) substrates by a hybrid PVD coater which is combined with medium frequency reactive magnetron sputtering and ion-plating evaporation. The effects of lanthanum addition and bias voltages on the composition, crystal morphology, microstructure, mechanical properties, and oxidation resistance of the TiAlLaN films were investigated systematically. With lanthanum addition in the TiAlN film, the crystal morphology changed from columnar to equiaxial, and the grain refinement accompanied by the increase of hardness and elastic modulus was found. The indentation adhesion test showed that the adhesion strength was deteriorated by adding lanthanum in the deposited film; however, the scratch adhesion test expressed a better morphology of the scratch track line for the TiAlLaN film. With the substrate bias increasing, the elements concentration of films were alternated, and the equiaxial crystals were turned to columnar crystals. The oxidation resistance of the deposited films increased with the increase of bias voltage. The adhesion qualities, which are affected by the increasing hardness and elastic modulus, were worse for the TiAlLaN films under higher bias voltages. The TiAlLaN film under the bias of -10 V showed the highest H/E ratio.

  17. First-Principles Investigation of Nanopore Sequencing Using Variable Voltage Bias on Graphene-Based Nanoribbons.

    PubMed

    McFarland, Hannah L; Ahmed, Towfiq; Zhu, Jian-Xin; Balatsky, Alexander V; Haraldsen, Jason T

    2015-07-01

    In this study, we examine the mechanism of nanopore-based DNA sequencing using a voltage bias across a graphene nanoribbon. Using density function theory and a nonequilibrium Green's function approach, we determine the transmission spectra and current profile for adenine, guanine, cytosine, thymine, and uracil as a function of bias voltage in an energy minimized configuration. Utilizing the transmission current, we provide a general methodology for the development of a three nanopore graphene-based device that can be used to distinguish between the various nucleobases for DNA/RNA sequencing. From our analysis, we deduce that it is possible to use different transverse currents across a multinanopore device to differentiate between nucleobases using various voltages of 0.5, 1.3, and 1.6 V. Overall, our goal is to improve nanopore design to further DNA/RNA nucleobase sequencing and biomolecule identification techniques.

  18. First-Principles Investigation of Nanopore Sequencing Using Variable Voltage Bias on Graphene-Based Nanoribbons.

    PubMed

    McFarland, Hannah L; Ahmed, Towfiq; Zhu, Jian-Xin; Balatsky, Alexander V; Haraldsen, Jason T

    2015-07-01

    In this study, we examine the mechanism of nanopore-based DNA sequencing using a voltage bias across a graphene nanoribbon. Using density function theory and a nonequilibrium Green's function approach, we determine the transmission spectra and current profile for adenine, guanine, cytosine, thymine, and uracil as a function of bias voltage in an energy minimized configuration. Utilizing the transmission current, we provide a general methodology for the development of a three nanopore graphene-based device that can be used to distinguish between the various nucleobases for DNA/RNA sequencing. From our analysis, we deduce that it is possible to use different transverse currents across a multinanopore device to differentiate between nucleobases using various voltages of 0.5, 1.3, and 1.6 V. Overall, our goal is to improve nanopore design to further DNA/RNA nucleobase sequencing and biomolecule identification techniques. PMID:26266743

  19. Nonlinear control of voltage source converters in AC-DC power system.

    PubMed

    Dash, P K; Nayak, N

    2014-07-01

    This paper presents the design of a robust nonlinear controller for a parallel AC-DC power system using a Lyapunov function-based sliding mode control (LYPSMC) strategy. The inputs for the proposed control scheme are the DC voltage and reactive power errors at the converter station and the active and reactive power errors at the inverter station of the voltage-source converter-based high voltage direct current transmission (VSC-HVDC) link. The stability and robust tracking of the system parameters are ensured by applying the Lyapunov direct method. Also the gains of the sliding mode control (SMC) are made adaptive using the stability conditions of the Lyapunov function. The proposed control strategy offers invariant stability to a class of systems having modeling uncertainties due to parameter changes and exogenous inputs. Comprehensive computer simulations are carried out to verify the proposed control scheme under several system disturbances like changes in short-circuit ratio, converter parametric changes, and faults on the converter and inverter buses for single generating system connected to the power grid in a single machine infinite-bus AC-DC network and also for a 3-machine two-area power system. Furthermore, a second order super twisting sliding mode control scheme has been presented in this paper that provides a higher degree of nonlinearity than the LYPSMC and damps faster the converter and inverter voltage and power oscillations.

  20. Nonlinear control of voltage source converters in AC-DC power system.

    PubMed

    Dash, P K; Nayak, N

    2014-07-01

    This paper presents the design of a robust nonlinear controller for a parallel AC-DC power system using a Lyapunov function-based sliding mode control (LYPSMC) strategy. The inputs for the proposed control scheme are the DC voltage and reactive power errors at the converter station and the active and reactive power errors at the inverter station of the voltage-source converter-based high voltage direct current transmission (VSC-HVDC) link. The stability and robust tracking of the system parameters are ensured by applying the Lyapunov direct method. Also the gains of the sliding mode control (SMC) are made adaptive using the stability conditions of the Lyapunov function. The proposed control strategy offers invariant stability to a class of systems having modeling uncertainties due to parameter changes and exogenous inputs. Comprehensive computer simulations are carried out to verify the proposed control scheme under several system disturbances like changes in short-circuit ratio, converter parametric changes, and faults on the converter and inverter buses for single generating system connected to the power grid in a single machine infinite-bus AC-DC network and also for a 3-machine two-area power system. Furthermore, a second order super twisting sliding mode control scheme has been presented in this paper that provides a higher degree of nonlinearity than the LYPSMC and damps faster the converter and inverter voltage and power oscillations. PMID:24906895

  1. Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage

    NASA Astrophysics Data System (ADS)

    Yücedağ, Ibrahim; Ersöz, Gülçin; Gümüş, Ahmet; Altındal, Şemsettin

    2015-03-01

    Au/PPy/n-Si Schottky barrier diodes (SBDs) were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the spin coating technique. Frequency-dependent dielectric constant (ɛ‧), dielectric loss (ɛ″), loss tangent (tan δ), real and imaginary parts of electrical modulus (M‧ and M″) and AC electrical conductivity (σac) parameters of the structure were investigated in the frequency range of 10-500 kHz. It was found that the values of the ɛ‧, ɛ″ and tan δ, in general, decrease with increasing frequency while an increase is observed in σac, M‧ and M″. The tanδ and M″ also exhibit a peak at about zero-bias voltage, while peak intensity weakens with increasing frequency. The values of ɛ‧ and M‧ decrease with increasing voltage while an increase is observed in ɛ″, tan δ, σac and M″. These changes in ɛ‧, ɛ″, tan δ, M‧, M″ and σac values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.

  2. SEMICONDUCTOR DEVICES Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    NASA Astrophysics Data System (ADS)

    Yan, Pu; Liang, Wang; Tingting, Yuan; Sihua, Ouyang; Lei, Pang; Guoguo, Liu; Weijun, Luo; Xinyu, Liu

    2010-10-01

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate—source and gate—drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate—source and gate—drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

  3. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  4. Metrological traceability for AC High-Voltage in Inmetro up to 40 kV

    NASA Astrophysics Data System (ADS)

    Vitorio, P. C. O.; de Lima, V. R.; Borges Filho, O.; de Souza, L. A. A.; Asencios, O. W. G.

    2016-07-01

    This paper refers to a project carried out in Inmetro aiming to provide internal metrological traceability for 60 Hz AC High-Voltage up to 40 kV. It presents details about the method used, its equations and obtained results. A capacitance and tanb bridge, with a built-in current comparator, was used in combination with two standard capacitors to calibrate a standard potential transformer (PT), both in ratio and phase angle. The results obtained by Inmetro showed good agreement with PTB ones, for the same PT. The maximum estimated uncertainty was 0,0049% for ratio error and 104 μrad for phase angle error.

  5. Spin Hall voltages from a.c. and d.c. spin currents

    PubMed Central

    Wei, Dahai; Obstbaum, Martin; Ribow, Mirko; Back, Christian H.; Woltersdorf, Georg

    2014-01-01

    In spin electronics, the spin degree of freedom is used to transmit and store information. To this end the ability to create pure spin currents—that is, without net charge transfer—is essential. When the magnetization vector in a ferromagnet–normal metal junction is excited, the spin pumping effect leads to the injection of pure spin currents into the normal metal. The polarization of this spin current is time-dependent and contains a very small d.c. component. Here we show that the large a.c. component of the spin currents can be detected efficiently using the inverse spin Hall effect. The observed a.c.-inverse spin Hall voltages are one order of magnitude larger than the conventional d.c.-inverse spin Hall voltages measured on the same device. Our results demonstrate that ferromagnet–normal metal junctions are efficient sources of pure spin currents in the gigahertz frequency range. PMID:24780927

  6. Investigations of a voltage-biased microwave cavity for quantum measurements of nanomechanical resonators

    NASA Astrophysics Data System (ADS)

    Rouxinol, Francisco; Hao, Hugo; Lahaye, Matt

    2015-03-01

    Quantum electromechanical systems incorporating superconducting qubits have received extensive interest in recent years due to their promising prospects for studying fundamental topics of quantum mechanics such as quantum measurement, entanglement and decoherence in new macroscopic limits, also for their potential as elements in technological applications in quantum information network and weak force detector, to name a few. In this presentation we will discuss ours efforts toward to devise an electromechanical circuit to strongly couple a nanomechanical resonator to a superconductor qubit, where a high voltage dc-bias is required, to study quantum behavior of a mechanical resonator. Preliminary results of our latest generation of devices integrating a superconductor qubit into a high-Q voltage biased microwave cavities are presented. Developments in the circuit design to couple a mechanical resonator to a qubit in the high-Q voltage bias CPW cavity is discussed as well prospects of achieving single-phonon measurement resolution. National Science Foundation under Grant No. DMR-1056423 and Grant No. DMR-1312421.

  7. Generalised mc × nc -stage switched-capacitor-voltage-multiplier-based boost DC-AC inverter

    NASA Astrophysics Data System (ADS)

    Chang, Yuen-Haw; Wu, Ming-Zong

    2012-01-01

    A closed-loop scheme of a generalised ? -stage (multistage) switched-capacitor-voltage-multiplier inverter (SCVMI) is proposed by combining a two-phase interleaved phase generator and a sinusoidal-pulse-width-modulation (SPWM) control for low-power boost dc-ac conversion and regulation. In this SCVMI, the power unit contains two parts: SCVM booster (front) and H-bridge (rear). The SCVM booster is composed of two ? -stage SC cells and two ? -stage SC cells in series for a boost dc-dc conversion, and these cells are operated with two-phase non-overlapping clocks of phase generator for a high conversion ratio of ? at most (like a voltage multiplier). The H-bridge consists of four switches for a dc-ac conversion, and these switches are controlled by SPWM not only for realising full-wave operation, but also for enhancing output regulation as well as robustness to source/loading variation. Further, some aspects of theoretical analysis and design are included: SCVMI formulation, steady-state/dynamic analysis, conversion ratio, power efficiency, stability, capacitance selection, output filter and control design. Finally, the closed-loop SCVMI is simulated and the hardware implemented and tested. All the results are illustrated to show the efficacy of the proposed scheme.

  8. Increased deposition of polychlorinated biphenyls (PCBs) under an AC high-voltage power line

    NASA Astrophysics Data System (ADS)

    Öberg, Tomas; Peltola, Pasi

    2009-12-01

    There is considerable public concern regarding the potential risks to health of electromagnetic fields in general and high-voltage power lines in particular. As epidemiological findings are not supported by a clearly defined mechanism of direct magnetic field interactions with the human body, potential indirect effects are of interest. It has been suggested that an increased exposure to chemical pollutants could occur near high-voltage power lines due to formation and deposition of charged aerosols. The current study reports empirical evidence that seems to support this hypothesis. The deposition of 18 congeners of polychlorinated biphenyls (PCBs) was studied by collecting samples of pine needles under a 400 kV AC power line and at reference sites in the vicinity. Compared to the reference sites, the average deposition of PCB congeners under the power line was almost double. This difference between the two groups of samples was statistically significant. While it is premature to draw any conclusions regarding the human exposure near high-voltage power lines, the issue deserves attention and further investigations.

  9. Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

    NASA Astrophysics Data System (ADS)

    Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

    2014-09-01

    We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

  10. Control and measurement of ion bombardment energies at substrates biased with tailored voltage waveforms

    NASA Astrophysics Data System (ADS)

    Patterson, Marlann Marinho

    Substrate bombardment by energetic ions is a central element of plasma etching used in fabrication of integrated circuits (IC), as well as plasma processes for thin film deposition and surface modification. A primary advantage of plasma etching is etch directionality resulting from positive ions bombarding the substrate at normal incidence. For plasma etching, high etch rates, etch anisotropy, high selectivity and low damage must be achieved simultaneously, and all are sensitive to ion bombardment energy. Reduction of device dimensions and the use of new materials associated with continuing advancement in IC performance further constrain etch processes. While average bombarding ion energy is typically controlled through application of RF sinusoidal voltage to the substrate electrode, this results in a broad distribution of ion energies (IED). Based on evidence that a narrow IED may improve etch selectivity for some processes, the focus of this study is control of the bombarding IED through manipulation of the shape of the voltage wave form applied to the substrate. Previous studies show dramatic improvements in etch selectivity in fluorocarbon-based plasmas using a specially tailored periodic bias voltage wave form developed by Wang, consisting of a short spike in combination with a longer period of constant voltage. In this study, the IED at the substrate is measured in an argon inductively coupled plasma (ICP) with a gridded energy analyzer, and it is shown that, as expected, the IED produced by Wang's tailored waveform exhibits a significantly narrower width than that produced by a sinusoidal waveform. Instrumentation for the gridded energy analyzer includes an innovation to minimize resolution loss associated with its location on an rf-biased electrode. In addition, a feedback algorithm for automating the process of setting an arbitrary voltage wave form at the electrode was developed, in which frequency components of the wave form are treated individually

  11. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co3O4-PVA/p-Si structures

    NASA Astrophysics Data System (ADS)

    Bilkan, Çiğdem; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin; Shokrani-Havigh, Roya

    2016-11-01

    In this research a simple microwave-assisted method have been used for preparation of cobalt oxide nanostructures. The as-prepared sample has been investigated by UV-vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM). On the other hand, frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε‧, ε″) and electric modulus (M‧ and M″), loss tangent (tanδ), and ac electrical conductivity (σac) values of Al/Co3O4-PVA/p-Si structures were obtained in the wide range of frequency and voltage using capacitance (C) and conductance (G/ω) data at room temperature. The values of ε‧, ε″ and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation time and polarization effect. While the value of σ is almost constant at low frequency, increases almost as exponentially at high frequency which are corresponding to σdc and σac, respectively. The M‧ and M″ have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M‧ increase with increasing frequency, the value of M″ shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and Nss effects with increasing frequency.

  12. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  13. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    NASA Astrophysics Data System (ADS)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  14. Voltage source ac-to-dc converters for high-power transmitters

    NASA Technical Reports Server (NTRS)

    Cormier, R.

    1990-01-01

    This work was done to optimize the design of the components used for the beam power supply, which is a component of the transmitters in the Deep Space Network (DSN). The major findings are: (1) the difference in regulation between a six-pulse and a twelve-pulse converter is at most 7 percent worse for the twelve-pulse converter; (2) the commutation overlap angle of a current source converter equals that of a voltage source converter with continuous line currents; (3) the sources of uncharacteristic harmonics are identified with SPICE simulation; (4) the use of an imperfect phase-shifting transformer for the twelve-pulse converter generates a harmonic at six times the line frequency; and (5) the assumptions usually made in analyzing converters can be relaxed with SPICE simulation. The results demonstrate the suitability of using SPICE simulation to obtain detailed performance predictions of ac-to-dc converters.

  15. Surface potential imaging with atomic resolution by frequency-modulation Kelvin probe force microscopy without bias voltage feedback.

    PubMed

    Kou, Lili; Ma, Zongmin; Li, Yan Jun; Naitoh, Yoshitaka; Komiyama, Masaharu; Sugawara, Yasuhiro

    2015-05-15

    We investigated the capability of obtaining atomic resolution surface potential images by frequency-modulation Kelvin probe force microscopy (FM-KPFM) without bias voltage feedback. We theoretically derived equations representing the relationship between the contact potential difference and the frequency shift (Δf) of an oscillating cantilever. For the first time, we obtained atomic resolution images and site-dependent spectroscopic curves for Δf and VLCPD on a Si (111)-7 × 7 surface. FM-KPFM without bias voltage feedback does not involve the influence of the FM-KPFM controller because it has no deviation from a parabolic dependence of Δf on the dc-bias voltage. It is particularly suitable for investigation on molecular electronics and organic photovoltaics, because electron or ion movement induced by dc bias is avoided and the electrochemical reactions are inhibited. PMID:25895740

  16. Stress anisotropy compensation of the sputter-deposited metal thin films by variable bias voltage

    NASA Astrophysics Data System (ADS)

    Khosraviani, Kourosh; Leung, Albert M.

    2013-08-01

    We introduce a new technique for compensating stress anisotropy across the thickness of sputter-deposited metal films. Our technique balances the film vertical stress gradient by altering the substrate bias during sputtering and by controlling the ion flux and energy that bombards the growing film. Sputter-deposited metal films are appealing materials for microfabrication of freestanding and out-of-plane structures, especially because of their low thermal budget. These microstructures extend the design space of micro-electro-mechanical systems (MEMS)-based devices, and they overcome some of the limitations of in-plane processing. Unfortunately, most elemental metals and alloys when sputter deposited have a substantial stress gradient across their thickness that can deteriorate their mechanical properties and severely distort the shape of the fabricated freestanding microstructures. The stress gradient across the thickness of a sputtered film can be compensated (balanced) by embedding a layer in the film with the opposite stress polarity compared to that of the bulk of the film. The force exerted by the stress mismatch between this layer and the bulk of the film easily overcomes the film's vertical stress gradient. This compensating force guarantees that a released freestanding structure remains flat and does not curl upward. This virtual layer is introduced to the growing film by altering the substrate bias voltage during the sputtering process. The substrate bias voltage controls the ion flux and energy that bombards the film, and it enables tailoring the film stress parameters. This technique has enabled us to fabricate freestanding microstructures up to 500 µm long with negligible stress-related deformation.

  17. Statistical characterization of voltage-biased SQUIDs with weakly damped junctions

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Zhang, Yi; Mück, Michael; Zhang, Shulin; Krause, Hans-Joachim; Braginski, Alex I.; Zhang, Guofeng; Wang, Yongliang; Kong, Xiangyan; Xie, Xiaoming; Offenhäusser, Andreas; Jiang, Mianheng

    2013-06-01

    Recently, it has been shown that voltage-biased readout of SQUIDs with weakly damped junctions (large Stewart-McCumber parameter βc, due to high shunt resistance) is useful for suppression of preamplifier noise. We experimentally studied the characteristics of 53 planar niobium-SQUID magnetometers with junction shunt resistors RJ nominally of 30 Ω fabricated on 5 × 5 mm2 chips. The field-to-flux transfer coefficient ∂B/∂Φ of the magnetometers was 1.5 nT/Φ0, with a SQUID loop inductance Ls of about 350 pH. The distributions of important SQUID parameters, such as the current swing Iswing, the dynamic resistance Rd, and the flux-to-voltage transfer coefficient ∂V/∂Φ, are given. Nearly all the SQUIDs could be stably operated in the voltage bias mode and their ∂V/∂Φ reached a large mean value of 380 μV/Φ0. In this case, the SQUIDs can be read out directly by a commercial operational amplifier without any additional means to suppress preamplifier noise. The mean flux noise of the SQUIDs was found to be 4.5 μΦ0 Hz-1/2, corresponding to a field resolution of 7 fT Hz-1/2. To demonstrate the applicability of these SQUIDs in the direct readout scheme, a simple four-channel SQUID gradiometer system was set up to perform magnetocardiography and magnetoencephalography measurements in a magnetically shielded room.

  18. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  19. Eliminating leakage current in voltage-controlled exchange-bias devices

    NASA Astrophysics Data System (ADS)

    Mahmood, Ather; Echtenkamp, Will; Street, Michael; Binek, Christian; Magnetic Heterostructures Team

    Manipulation of magnetism by electric field has drawn much attention due to the technological importance for low-power devices, and for understanding fundamental magnetoelectric phenomena. A manifestation of electrically controlled magnetism is voltage control of exchange bias (EB). Robust isothermal voltage control of EB was demonstrated near room temperature using a heterostructure of Co/Pd thin film and an exchange coupled single crystal of the antiferromagnetic Cr2O3 (Chromia). A major obstacle for EB in lithographically patterned Chromia based thin-film devices is to minimize the leakage currents at high electric fields (>10 kV/mm). By combining electrical measurements on patterned devices and conductive Atomic Force Microscopy of Chromia thin-films, we investigate the defects which form conducting paths impeding the application of sufficient voltage for demonstrating the isothermal EB switching in thin film heterostructures. Technological challenges in the device fabrication will be discussed. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC Abstract DMR-0820521.

  20. Influence of substrate bias voltage on structural and optical properties of RF reactive magnetron sputtered WO3 thin films

    NASA Astrophysics Data System (ADS)

    Madhavi, V.; Kondaiah, P.; Uthanna, S.

    2012-11-01

    In this investigation, tungsten oxide (WO3) thin films have been deposited on unheated glass substrates by RF magnetron sputtering of tungsten target at constant oxygen partial pressure of 6×10-2 Pa, sputtering power of 150 W and at different substrate bias voltages in the range from 0 to -150 V. The structural and optical properties of the films were investigated by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis-NIR spectrophotometers. The films formed up to substrate bias voltage of -50 V were found to be amorphous in nature, while those films formed at -100 V showed a weak (200) reflection indicates the presence of monoclinic phase of WO3 in amorphous matrix. The optical transmittance of the films was in the range 78 - 95 % in the wavelength range of 500 - 1200 nm. The absorption band edge was shifted towards higher wavelength side with increasing substrate bias voltage. The optical band gap of the films decrease from 2.81 to 2.69 eV with increase of substrate bias voltage from 0 to -150 V respectively. The refractive index of the films increased from 2.19 to 2.27 with increase of substrate bias voltage from 0 to -150 V respectively.

  1. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    DOEpatents

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  2. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    NASA Astrophysics Data System (ADS)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  3. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    SciTech Connect

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance.

  4. TES-Based X-ray Microcalorimeter Performances Under AC Bias and FDM for Athena

    NASA Astrophysics Data System (ADS)

    Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.; den Herder, J.-W.; den Hartog, R.; Hoevers, H.; Kelley, R. E.; Khosropanah, P.; Kilbourne, C. A.; van der Kuur, J.; Lee, S.-J.; van den Linden, A. J.; Porter, F. S.; Ravensberg, K.; Sadleir, J. E.; Smith, S. J.; Suzuki, T.; Wassell, E. J.; Kiviranta, M.

    2016-07-01

    Athena is a European X-ray observatory, scheduled for launch in ˜ 2028. Athena will employ a high-resolution imaging spectrometer called X-ray integral field unit (X-IFU), consisting of an array of ˜ 4000 transition edge sensor (TES) microcalorimeter pixels. For the readout of X-IFU, we are developing frequency domain multiplexing, which is the baseline readout system. In this paper, we report on the performance of a TES X-ray calorimeter array fabricated at Goddard Space Flight Center (GSFC) at MHz frequencies for the baseline of X-IFU detector. During single-pixel AC bias characterization, we measured X-ray energy resolutions (at 6 keV) of about 2.9 eV at both 2.3 and 3.7 MHz. Furthermore, in the multiplexing mode, we measured X-ray energy resolutions of about 2.9 eV at 1.3 and 1.7 MHz.

  5. Voltage-biased superconducting bolometers for infrared and mm-waves

    NASA Astrophysics Data System (ADS)

    Gildemeister, Jan Mathias

    We describe the design, fabrication, and testing of superconducting bolometers for far-infrared and millimeter waves. The bolometers are voltage biased and the current is read out with a commercial SQUID amplifier. Electrothermal feedback makes the devices null-detectors with reduced response time and enhanced linearity. Three types of voltage biased superconducting bolometers are discussed. The first two types are operated at a base temperature of T 0 = 264mK and are intended for use in astrophysics experiments such as measurements of the anisotropy in the temperature and polarization of the cosmic microwave background. Bolometers fabricated in a mesh structure resembling a spider-web are designed for use in horn-coupled arrays. Bolometers made with a square mesh structure can be assembled into close-packed arrays to fill the focal plane of a telescope. The third type is designed for use in a far-infrared Fourier spectrometer. It is suspended by a membrane and is operated at the temperature of liquid He, T0 = 4.2K. The important operational parameters of all devices are discussed. Measurements of time constants and noise spectra are presented. The first two types show a wide feature of noise not explained by the basic theory. An alternative noise model is discussed in which additional noise arises from the combination of electrothermal feedback and a complex thermal circuit. This model explains the observed excess noise and is supported by data from other devices which were built specifically to test the model. The model shows that noise performance can be improved to fundamental limits by using low heat capacity metals for the bolometer components. All devices are manufactured by standard microlithographic techniques. The design and fabrication process is described in detail and possible improvements are discussed.

  6. Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

    SciTech Connect

    Saito, Y. Tanamoto, T.; Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Hamaya, K.; Tezuka, N.

    2014-05-07

    Local magnetoresistance (MR) through silicon (Si) and its bias voltage (V{sub bias}) (bias current (I{sub bias})) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing V{sub bias}. This anomalous increase of local-MR as a function of V{sub bias} can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.

  7. Abnormal Current-Voltage Hysteresis Induced by Reverse Bias in Organic-Inorganic Hybrid Perovskite Photovoltaics.

    PubMed

    Rajagopal, Adharsh; Williams, Spencer T; Chueh, Chu-Chen; Jen, Alex K-Y

    2016-03-17

    In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH3NH3PbI3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH3NH3PbI3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiOx/CH3NH3PbI3 interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH3NH3PbI3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Furthermore, this work shows that RB can alter how CH3NH3PbI3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes. PMID:26927828

  8. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  9. Analysis of Fe Nanoparticles Using XPS Measurements Under D.C. or Pulsed-Voltage Bias

    SciTech Connect

    Suzer, Sefik; Baer, Donald R.; Engelhard, Mark H.

    2010-06-16

    The impact of solution exposure on the charging properties of oxide coatings on Fe metal-core oxide-shells has been examined by sample biasing during XPS measurements. The Fe nanoparticles were suspended in relatively unreactive acetone and were analyzed after particle containing solutions were deposited on SiO2/Si substrates, and/or Au substrates. The particle and substrate combinations were subjected to ± 10V d.c. biasing in the form of square waves (SQW) pulses with 5V amplitude. The samples experienced variable degrees of charging for which low energy electrons at ~1 eV, 20μA and low energy Ar+ ions were used to minimize. Application of d.c. bias and/or square wave pulses drastically influences the extent of charging, which is utilized to gather additional analytical information about the sample under investigation. This approach allows separation of otherwise overlapping peaks. Accordingly, the O1s peaks of the silicon oxide substrate, the iron oxide nanoparticles, and that of the casting solvent can be separated from each other. Similarly the C1s peak belonging to the solvent can be separated from that of the adventitious carbon. The charging shifts of the iron nanoparticles are strongly influenced by the surrounding solvent. Hence, acetone exhibits the largest shift, water the smallest, and methanol in between. Dynamical measurements performed by application of the voltage stress in the form of SQW pulses gives information about the time constants of the processes involved, which led us postulate that these charging properties we probe in these systems, stem mainly from ionic movement(s).

  10. Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; Blandler, S. R.; Porter, F. S.; Sadleir, J. E.; Kilbourne, C. A.; Bailey, C. N.; Finkbeiner, F. M.; Chervenak, J. A.; Adams, J. S.; Eckart, M. E.; Kelley, R. L.; Smith, S. J.; Linden, T. V. D.; Hoevers, H.; Kuur, J. V. D.; Lindeman, M.; Bruijn, M.; Hortog, R. D.; Kiviranta, M.

    2012-01-01

    In this paper we present the progress made at SRON in the read-out of GSFC x-ray transition-edge sensor (TES) micro-calorimeters in the frequency domain. The experiments reported so far, whose aim was to demonstrate an energy resolution of 2eV at 6 keV with a TES acting as a modulator, were carried out at frequencies below 700 kHz using a standard flux locked loop (FLL) SQUID read-out scheme. The TES read-out suffered from the use of sub-optimal circuit components, large parasitic inductances, low quality factor resonators and poor magnetic field shielding. We have developed a novel experimental set-up, which allows us to test several read-out schemes in a single cryogenic run. In this set-up, the TES pixels are coupled via superconducting transformers to 18 high-Q lithographic LC filters with resonant frequencies ranging between 2 and 5 MHz. The signal is amplified by a two-stage SQUID current sensor and baseband feedback is used to overcome the limited SQUID dynamic range. We study the single pixel performance as a function of TES bias frequency, voltage and perpendicular magnetic field.

  11. External dc bias field effects in the nonlinear ac stationary response of permanent dipoles in a uniaxial potential

    NASA Astrophysics Data System (ADS)

    Wei, Nijun; Coffey, William T.; Déjardin, Pirre-Michel; Kalmykov, Yuri P.

    External dc bias field effects on the nonlinear dielectric relaxation and dynamic Kerr effect of a system of permanent dipoles in a uniaxial mean field potential are studied via the rotational Brownian motion model. Postulated in terms of the infinite hierarchy of differential-recurrence equations for the statistical moments (the expectation value of the Legendre polynomials), the dielectric and Kerr effect ac stationary responses may be evaluated for arbitrary dc bias field strength via perturbation theory in the ac field. We have given two complementary approaches for treating the nonlinear effects. The first is based on perturbation theory allowing one to calculate the nonlinear ac stationary responses using powerful matrix methods. The second approach based on the accurate two-mode approximation [D.A. Garanin, Phys. Rev. E. 54, 3250 (1996)] effectively generalizes the existing results for dipolar systems in superimposed ac and dc fields to a mean field potential. The results apply both to nonlinear dielectric relaxation and dynamic Kerr effect of nematics and to magnetic birefringence relaxation of ferrofluids. Furthermore, the given methods of the solution of infinite hierarchies of multi-term recurrence relations are quite general and can be applied to analogous nonlinear response problems.

  12. Revealing the charge transport mechanism of a photoelectrochemical cell: analysis using A.C. voltage perturbation.

    PubMed

    Patel, Dipal B; Chauhan, Khushbu R; Mukhopadhyay, Indrajit

    2014-10-14

    In this paper, we have carefully investigated the operation of a photoelectrochemical (PEC) cell configured of PbOx|Fe(CN)6(-4/-3)|Pt in the accumulation, flat band, depletion, inversion and deep-depletion regions using impedance measurements. The increases in the photocurrent for the different regions differ in their nature: a logarithmic increase in the depletion region, a linear increase in the inversion region along with a linear increase in the dark current and an exponential increase in the photo- and dark current in the deep-depletion region. All these variations are studied in detail to correlate these observations to the charge transfer mechanisms. The characteristics of the impedance spectrum itself can be assigned to the mentioned regions. We have found that the maximum photocurrent of the PEC cell, in the present investigation, can be extracted when the cell is working in the inversion region, while the maximum rate of the increase in photocurrent is found when the junction behaves as an ideal Schottky diode with a single RC element. Systematic experiments are suggested to establish a correlation between the observations obtained from the photocurrent, impedance, conductance, low frequency and high frequency capacitance measurements. It was found that light induced trap states in the semiconductor limit the photocurrent which has a linear dependency on the irradiance. A detailed investigation with A.C. conductivity measurements showed that the trap states actively participate in the current mechanism via a hopping phenomenon with small activation energies of 0.2 and 0.8 meV. The hopping rate increased exponentially with the applied bias under dark and illumination conditions. We also show a new way of finding the potential at which the maximum photocurrent will be extracted from the PEC cell, wherein the hopping via trap states is a dominating charge transfer mechanism. This study will help in pin pointing the key affecting parameters which limit the

  13. Phase Shift of a Coplanar Waveguide by Bias Voltage on Thick Lead Zirconate Titanate Film at Microwave Frequency

    NASA Astrophysics Data System (ADS)

    Shibata, Kouji; Iijima, Takashi; Masuda, Yoichiro

    2008-09-01

    A coplanar waveguide was fabricated by depositing a 1-µm-thick Au film on a multilayer dielectric, consisting of a 2-µm-thick lead zirconate titanate (PZT) film over an Al2O3 substrate, through etching. Following this, the reflection constant, transmission constant, and phase variation were measured for this transmission line as bias voltage was varied from 30 to 50 V. As a result, it was confirmed that the phase variation becomes about 15° at a 50 V bias at a frequency of 10 GHz. We then confirmed the basic input-output characteristics of this type of structure in the microwave band. Finally, the relative permittivity of a PZT thick film as a coplanar waveguide was estimated using the measurement results of relative permittivity according to the split cavity resonator method, and phase variation under the condition in which a bias voltage was applied.

  14. Effects of bias voltage on diamond like carbon coatings deposited using titanium isopropoxide (TIPOT) and acetylene/argon mixtures onto various substrate materials.

    PubMed

    Said, R; Ghumman, C A A; Teodoro, M N D; Ahmed, W; Abuazza, A; Gracio, J

    2010-04-01

    RF-PECVD was used to prepare amorphous of carbon (DLC) onto stainless steel 316 and glass substrates. The substrates were negatively biased at between 100 V to 400 V. Thin films of DLC have been deposited using C2H2 and titanium isopropoxide (TIPOT). Argon was used to generate the plasma in the PECVD system chamber. DEKTAK 8 surface stylus profilometer was used to measure the film thickness and the deposition rate was calculated. Micro Raman spectroscopy was employed to determine the chemical structure and bonding present in the films. Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) instrument. In addition, X-ray photoelectron spectroscopy (XPS) was used to analyze the composition and chemical state of the films. The wettability of the films was examined using the optical contact angle meter (CAM200) system. Two types of liquids with different polarities were used to study changes in the surface energy. The as-grown films were in the thickness range of 200-400 nm. Raman spectroscopy results showed that the I(D)/I(G) ratio decreased when the bias voltage on the stainless steel substrates was increased. This indicates an increase in the graphitic nature of the film deposited. In contrast, on the glass substrates the I(D)/I(G) ratio increased when the bias voltage was increased indicates a greater degree of diamond like character. Chemical composition determined using XPS showed the presence of carbon and oxygen in both samples on glass and stainless steel substrates. Both coatings the contact angle of the films decreased except for 400 V which showed a slight increase. The oxygen is thought to play an important role on the polar component of a-C. PMID:20355461

  15. System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

    NASA Technical Reports Server (NTRS)

    Lipo, Thomas A.; Alan, Irfan

    1991-01-01

    Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the

  16. On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas

    SciTech Connect

    Agarwal, Ankur; Dorf, Leonid; Rauf, Shahid; Collins, Ken

    2012-03-15

    Higher gas densities and lower diffusion losses at higher operating pressures typically lead to increased charged species densities (and hence flux) for a constant power deposition in capacitively coupled plasmas (CCP). As a result, one would expect that the bias radio-frequency (rf) voltage required to deposit a given power in a CCP reactor decreases with increasing operating pressure. These observations may not hold true in multiple frequency CCPs, commonly used for dielectric etching in microelectronics fabrication, due to nonlinear interactions between the rf sources. Wafer-based measurements of the rf and self-generated direct current (dc) bias voltages in a dual-frequency capacitively coupled electronegative plasma were made, which indicate that the rf and dc voltages vary nonmonotonically with pressure. These experimental results are presented in this paper and a computational plasma model is used to explain the experimental observations for varying 60 MHz and 13 MHz powers in the Ar/CF{sub 4}/CHF{sub 3} plasma over a pressure range of 25 to 400 mTorr. The authors found that while the ion density increases with pressure, the increase is most dominant near the electrode with the high frequency source (60 MHz). The rf and dc bias voltages are ultimately influenced by both charged species density magnitudes and spatial profiles.

  17. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    NASA Astrophysics Data System (ADS)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  18. Temporal study of the current collected by a Langmuir probe biased to high voltages in the wake behind a conducting body

    NASA Technical Reports Server (NTRS)

    Meassick, S.; Chan, C.

    1994-01-01

    The temporal evolution of the voltage-current characteristic of a spherical Langmuir probe in the near-wake region of a conducting body is investigated in a pulsed plasma device. Measurements of the current collected by a sphere placed on axis behind a conducting disk are presented as a function of the bias voltage and time. The bias voltage on the collecting sphere is large enough, ranging from +500 to -3000 V, to attract ions or electrons across the wake region. In addition, plasma potential profiles as a function of sphere bias voltage and time throughout the nearwake and midwake region are presented. It is found that for a negative sphere bias a threshold voltage exists for current collection. This threshold voltage decreases during the formation of the wake behind the conducting disk. Potential measurements indicate that the sheath region around the negatively biased sphere contracts as the wake region establishes itself. This contraction of the sheath region increases the electric field attracting ions to the sphere and decreases the threshold voltage for current collection. For positive sphere bias voltage the current collected by the sphere does not exhibit a threshold voltage but is monotonically increasing.

  19. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    SciTech Connect

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  20. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    SciTech Connect

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M.; Ashcroft, C. M.; Canalias, C.; Gruverman, A.

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  1. Spectral response measurement of double-junction thin-film photovoltaic devices: the impact of shunt resistance and bias voltage

    NASA Astrophysics Data System (ADS)

    Pravettoni, Mauro; Galleano, Roberto; Virtuani, Alessandro; Müllejans, Harald; Dunlop, Ewan D.

    2011-04-01

    Multijunction photovoltaic (PV) thin-film modules are becoming more and more important on the market, due to their low cost and improved module efficiency now well above 10%. The spectral response (SR) measurement of multijunction thin-film cells presents additional challenges with respect to the SR measurement procedure for single-junction devices. Several works have appeared in the last 15 years in the PV literature, describing certain measurement artefacts that typically appear when measuring the SR of multijunction cells without applying an appropriate voltage bias to the entire cell. In this paper, the authors revise the theoretical description of SR measurements on multijunction devices, show how to detect the possible origin of measurement artefacts from the dark SR and show why bias voltage sometimes is not enough to avoid such artefacts or why it is not even necessary. An experimental confirmation of the theoretical approach is finally given.

  2. Circuit transients due to negative bias arcs on a high-voltage solar array in low Earth orbit

    NASA Technical Reports Server (NTRS)

    Metz, R. N.

    1985-01-01

    Arcing to negatively biased, exposed solar cell interconnects on solar arrays placed in plasma environments was established. Arcing, however, may cause damaging interference with the operation of electrical power systems in spacecraft planned to be driven with high-voltage solar arrays. An analytical model was developed to estimate the effects of netagive bias arcs on solar array power system performance. Solar cell characteristics, plasma interactions, and power system features are modeled by a linear, lumped element transient circuit, and the time domain equations are solved. Numerical results for solar array common mode and load voltage transients are calculated for typical conditions. Acceptable load transients are found for a range of arc current amplitudes and time constants.

  3. Analysis of three-phase rectifiers with AC-side switches and interleaved three-phase voltage-source converters

    NASA Astrophysics Data System (ADS)

    Miller, Stephanie Katherine Teixeira

    Of all the alternative and renewable energy sources, wind power is the fastest growing alternative energy source with a total worldwide capacity of over 93 GW as of the end of 2007. However, making wind energy a sustainable and reliable source of electricity doesn't come without its set of challenges. As the wind turbines increase in size and turbine technology moves towards off-shore wind farms and direct drive transmission, the need for a reliable and efficient power electronics interface to convert the variable-frequency variable-magnitude output of the wind turbine's generator into the fixed-frequency fixed-magnitude voltage of the utility grid is critical. This dissertation investigates a power electronics interface envisioned to operate with an induction generator-based variable-speed wind turbine. The research conclusions and the interface itself are applicable to a variety of applications, including uninterruptible power supplies, industrial drives, and power quality applications, among others. The three-phase PWM rectifiers with ac-side bidirectional switches are proposed as the rectification stage of the power electronics interface. Modulation strategies are proposed for the rectifiers and the operation of the rectifiers in conjunction with an induction generator is demonstrated. The viability of using these rectifiers in place of the standard three-phase voltage-source converter is analyzed by comparing losses and common-mode voltage generation of the two topologies. Parallel three-phase voltage-source converter modules operated in an interleaved fashion are proposed for the inversion stage of the power electronics interface. The interleaved three-phase voltage-source converters are analyzed by deriving analytical models for the common-mode voltage, ac phase current, and dc-link current to reveal their spectra and the harmonic cancellation effects of interleaving. The practical problem of low frequency circulating current in parallel voltage

  4. Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C60-Based OFETs

    PubMed Central

    2014-01-01

    The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (Vth) shift was found to depend critically on the OFET device structure: the direction of Vth shift in top-gate OFETs was opposite to that in bottom-gate OFETs, while the use of the dual-gate OFET structure resulted in just very small variations in Vth. The opposite direction of Vth shift is attributed to the different nature of interfaces between C60 semiconductor and Parylene dielectric in these devices. The Vth shift to more positive voltages upon bias stress in bottom-gate C60-OFET was similar to that observed for other n-type semiconductors and rationalized by electron trapping in the dielectric or at the gate dielectric/C60 interface. The opposite direction of Vth shift in top-gate C60-OFETs is attributed to free radical species created in the course of Parylene deposition on the surface of C60 during device fabrication, which produce plenty of hole traps. It was also realized that the dual-gate OFETs gives stable characteristics, which are immune to bias stress effects. PMID:25142130

  5. Voltage-sensor transitions of the inward-rectifying K+ channel KAT1 indicate a latching mechanism biased by hydration within the voltage sensor.

    PubMed

    Lefoulon, Cécile; Karnik, Rucha; Honsbein, Annegret; Gutla, Paul Vijay; Grefen, Christopher; Riedelsberger, Janin; Poblete, Tomás; Dreyer, Ingo; Gonzalez, Wendy; Blatt, Michael R

    2014-10-01

    The Kv-like (potassium voltage-dependent) K(+) channels at the plasma membrane, including the inward-rectifying KAT1 K(+) channel of Arabidopsis (Arabidopsis thaliana), are important targets for manipulating K(+) homeostasis in plants. Gating modification, especially, has been identified as a promising means by which to engineer plants with improved characteristics in mineral and water use. Understanding plant K(+) channel gating poses several challenges, despite many similarities to that of mammalian Kv and Shaker channel models. We have used site-directed mutagenesis to explore residues that are thought to form two electrostatic countercharge centers on either side of a conserved phenylalanine (Phe) residue within the S2 and S3 α-helices of the voltage sensor domain (VSD) of Kv channels. Consistent with molecular dynamic simulations of KAT1, we show that the voltage dependence of the channel gate is highly sensitive to manipulations affecting these residues. Mutations of the central Phe residue favored the closed KAT1 channel, whereas mutations affecting the countercharge centers favored the open channel. Modeling of the macroscopic current kinetics also highlighted a substantial difference between the two sets of mutations. We interpret these findings in the context of the effects on hydration of amino acid residues within the VSD and with an inherent bias of the VSD, when hydrated around a central Phe residue, to the closed state of the channel. PMID:25185120

  6. Voltage-sensor transitions of the inward-rectifying K+ channel KAT1 indicate a latching mechanism biased by hydration within the voltage sensor.

    PubMed

    Lefoulon, Cécile; Karnik, Rucha; Honsbein, Annegret; Gutla, Paul Vijay; Grefen, Christopher; Riedelsberger, Janin; Poblete, Tomás; Dreyer, Ingo; Gonzalez, Wendy; Blatt, Michael R

    2014-10-01

    The Kv-like (potassium voltage-dependent) K(+) channels at the plasma membrane, including the inward-rectifying KAT1 K(+) channel of Arabidopsis (Arabidopsis thaliana), are important targets for manipulating K(+) homeostasis in plants. Gating modification, especially, has been identified as a promising means by which to engineer plants with improved characteristics in mineral and water use. Understanding plant K(+) channel gating poses several challenges, despite many similarities to that of mammalian Kv and Shaker channel models. We have used site-directed mutagenesis to explore residues that are thought to form two electrostatic countercharge centers on either side of a conserved phenylalanine (Phe) residue within the S2 and S3 α-helices of the voltage sensor domain (VSD) of Kv channels. Consistent with molecular dynamic simulations of KAT1, we show that the voltage dependence of the channel gate is highly sensitive to manipulations affecting these residues. Mutations of the central Phe residue favored the closed KAT1 channel, whereas mutations affecting the countercharge centers favored the open channel. Modeling of the macroscopic current kinetics also highlighted a substantial difference between the two sets of mutations. We interpret these findings in the context of the effects on hydration of amino acid residues within the VSD and with an inherent bias of the VSD, when hydrated around a central Phe residue, to the closed state of the channel.

  7. Voltage-Sensor Transitions of the Inward-Rectifying K+ Channel KAT1 Indicate a Latching Mechanism Biased by Hydration within the Voltage Sensor1[W][OPEN

    PubMed Central

    Lefoulon, Cécile; Karnik, Rucha; Honsbein, Annegret; Gutla, Paul Vijay; Grefen, Christopher; Riedelsberger, Janin; Poblete, Tomás; Dreyer, Ingo; Gonzalez, Wendy; Blatt, Michael R.

    2014-01-01

    The Kv-like (potassium voltage-dependent) K+ channels at the plasma membrane, including the inward-rectifying KAT1 K+ channel of Arabidopsis (Arabidopsis thaliana), are important targets for manipulating K+ homeostasis in plants. Gating modification, especially, has been identified as a promising means by which to engineer plants with improved characteristics in mineral and water use. Understanding plant K+ channel gating poses several challenges, despite many similarities to that of mammalian Kv and Shaker channel models. We have used site-directed mutagenesis to explore residues that are thought to form two electrostatic countercharge centers on either side of a conserved phenylalanine (Phe) residue within the S2 and S3 α-helices of the voltage sensor domain (VSD) of Kv channels. Consistent with molecular dynamic simulations of KAT1, we show that the voltage dependence of the channel gate is highly sensitive to manipulations affecting these residues. Mutations of the central Phe residue favored the closed KAT1 channel, whereas mutations affecting the countercharge centers favored the open channel. Modeling of the macroscopic current kinetics also highlighted a substantial difference between the two sets of mutations. We interpret these findings in the context of the effects on hydration of amino acid residues within the VSD and with an inherent bias of the VSD, when hydrated around a central Phe residue, to the closed state of the channel. PMID:25185120

  8. Tunneling spectroscopy of clean and adsorbate-covered gold surfaces in humid air, measured with fast bias voltage ramps

    NASA Astrophysics Data System (ADS)

    Rösch, Raphael; Schuster, Rolf

    2015-01-01

    The noise level of tunneling spectroscopic data can be significantly reduced by averaging the tunneling current over a large number of short bias voltage ramps, instead of recording over a single slow ramp. This effect is demonstrated for tunneling spectra of Au(111) by averaging over 200 consecutive bias voltage ramps, each 500 μs long. We attribute the improvement of the data quality to the frequency dependence of the current noise spectral density. Due to mechanical vibrations and tip instabilities the noise density is usually much higher for low frequencies ca. < 1 kHz than for the high frequencies relevant for measuring with fast bias ramps. The high data quality allowed for the routine detection of the Au(111) surface state and the investigation of the influence of steps in humid air, i.e., with a water-covered tunneling gap. For a CN covered Au surface in the presence of water we unexpectedly found additional electronic density of states at positive energies, around 0.6 eV, i.e., for unoccupied states. STS spectra of a (√{ 3} ×√{ 3}) R 30 ° Cu-UPD layer, formed by adsorbed sulfate and Cu species, indicate tunneling via the sulfate electronic density of states.

  9. High-field actively detuneable transverse electromagnetic (TEM) coil with low-bias voltage for high-power RF transmission.

    PubMed

    Avdievich, Nikolai I; Bradshaw, Ken; Kuznetsov, Andrey M; Hetherington, Hoby P

    2007-06-01

    The design and construction of a 4T (170 MHz) transverse electromagnetic (TEM) actively detuneable quadrature head coil is described. Conventional schemes for active detuning require high negative bias voltages (>300 V) to prevent leakage of RF pulses with amplitudes of 1-2 kW. To extend the power handling capacity and avoid the use of high DC bias voltages, we developed an alternate method of detuning the volume coil. In this method the PIN diodes in the detuning circuits are shorted when the RF volume coil is tuned, and negatively biased with -12 V when the coil is detuned. To preserve the high Q(U)/Q(L) ratio of the TEM coil, we modified the method of Nabetani and Watkins (Proceedings of the 13th Annual Meeting of ISMRM, Kyoto, Japan, 2004, abstract 1574) by utilizing a high-impedance (approximately 200 Omega), lumped-element, quarter-wavelength transformer. A Q(U) of 500 was achieved for the detuneable TEM, such that incorporation of the detuning network had minimal effect (<1 dB) on the performance of the coil in vivo. PMID:17534919

  10. Electrical Experiments. VT-214-12-4. Part IV. A-C Reduced Voltage Controls.

    ERIC Educational Resources Information Center

    Connecticut State Dept. of Education, Hartford. Div. of Vocational Education.

    Designed for high school electronics students, this fourth document in a series of six electrical learning activity packages focuses on alternating current-reduced voltage controls. An introductory section gives the objective for the activities, an introduction, and an outline of the content. The remainder of the guidebook is comprised of…

  11. Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors

    SciTech Connect

    Bacchetta, N.; Gotra, Yu. ); Bisello, D.; Da Ros, R.; Giraldo, A. Univ. di Padova . Dipt. di Fisica); Canali, C. Univ. di Modena . Facolta di Ingegneria); Fuochi, P.G. ); Fusaro, G. . Dept. di Elettronica e Informatica); Paccagnella, A. Univ. di Cagliari . Instituto di Elettrotecnica); Verzellesi, G. Univ. di Padova . Dept. di Elettronica e Informatica)

    1993-12-01

    The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behavior, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.

  12. SEMICONDUCTOR DEVICES: Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

    NASA Astrophysics Data System (ADS)

    Yong, Zhang; Jianhong, Yang; Xueyuan, Cai; Zaixing, Wang

    2010-04-01

    The exponential dependence of the potential barrier height phic on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of phic on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of phic can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.

  13. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  14. A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation

    NASA Astrophysics Data System (ADS)

    Hong, Jie; He, Yandong; Zhang, Ganggang; Zhang, Xing

    2013-04-01

    This paper presents a test circuit which can be used to analyze the p-MOSFET threshold voltage (VT) shift and fluctuation. The proposed circuit includes two p-MOSFETs, series connection. Using the circuit, we can directly measure threshold voltage shift on the output side and gather fluctuation statistics of p-MOSFET devices. The principle and the sensitivity of this method are demonstrated, followed by simulation and experimental results. A predictive model of negative bias temperature instability (NBTI) is introduced to analyze the PMOS degradation under constant stress. The NBTI stress experimental results have shown that this circuit can monitor NBTI degradation accurately, and offer a significant improvement in efficiency over existing Id-Vg methods.

  15. Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

    SciTech Connect

    Hao, Yu; Rouxinol, Francisco; LaHaye, M. D.

    2014-12-01

    We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10{sup 5} can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED.

  16. Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

    SciTech Connect

    Fabretti, Savio; Zierold, Robert; Nielsch, Kornelius; Voigt, Carmen; Ronning, Carsten; Peretzki, Patrick; Seibt, Michael; Thomas, Andy

    2014-09-29

    Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

  17. Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

    SciTech Connect

    Chida, K.; Yamauchi, Y.; Arakawa, T.; Kobayashi, K.; Ono, T.; Hashisaka, M.; Nakamura, S.; Machida, T.

    2013-12-04

    We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

  18. Higher harmonics in voltage on superconductor carrying AC current due to non-linear I- V curve

    NASA Astrophysics Data System (ADS)

    Janíková, Edita; Gömöry, Fedor; Šouc, Ján

    2004-01-01

    When superconducting wire carries AC current with amplitude exceeding its critical current, additional losses appear due to non-zero resistivity. The voltage attributed to this mechanism will contain higher harmonics because of non-linear I- V curve of superconducting material. This curve can be derived using the following simple model: parallel combination of superconductor standing for the properties of all the filaments and the normal resistor representing the matrix. I- V relation is then characterized by three parameters: the critical current, I0, the n-exponent, n, and the ratio of the cross-section to the resistivity of metallic matrix. Expressions for Fourier coefficients have been calculated for this model. Extensive analysis of the influence that the model parameters exhibit on higher harmonics have revealed some useful features: 3rd harmonic could be nicely used to detect I0 and n, while from the maximum of 5th harmonic the value of matrix resistivity can be estimated.

  19. Ac response of an electron gas under a strong electric-field bias

    SciTech Connect

    Ma, S. ); Shung, K.W. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 )

    1993-10-15

    A linear ac response theory of an electron gas under a strong, static electric field ([bold E]) is presented, and applied to doped GaAs for a detailed calculation. This is a generalization of the force-balance transport equation developed by Ting [ital et] [ital al]., with which the nonlinear conductivity under a strong field can be studied. The dynamic screening effect is included in the theory and studied analytically. The result is expressed by a modified Drude formula, with an effective lifetime which is a function of the frequency and also of [bold E]---both its magnitude and its direction. The calculated optical reflectivity and absorption rate show anomalous structure at frequencies close to the plasmon oscillation, when the nonlinear dc effect due to a strong [bold E] is important. The anomaly is expected to be experimentally measurable.

  20. Characteristics of plasma sterilizer using microwave torch plasma with AC high-voltage discharge plasma

    NASA Astrophysics Data System (ADS)

    Itarashiki, Tomomasa; Hayashi, Nobuya; Yonesu, Akira

    2016-01-01

    Microwave plasma sterilization has recently been attracting attention for medical applications. However, it is difficult to perform low-temperature sterilization in short time periods. Increasing the output power shortens the time required for sterilization but causes the temperature to increase. To overcome this issue, we have developed a hybrid plasma system that combines a microwave torch plasma and a high-voltage mesh plasma, which allows radicals to be produced at low temperatures. Using this system, successful sterilization was shown to be possible in a period of 45 min at a temperature of 41 °C.

  1. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    NASA Astrophysics Data System (ADS)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  2. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature.

    PubMed

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-01

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.

  3. Tunable photonic cavity coupled to a voltage-biased double quantum dot system: Diagrammatic nonequilibrium Green's function approach

    NASA Astrophysics Data System (ADS)

    Agarwalla, Bijay Kumar; Kulkarni, Manas; Mukamel, Shaul; Segal, Dvira

    2016-07-01

    We investigate gain in microwave photonic cavities coupled to voltage-biased double quantum dot systems with an arbitrarily strong dot-lead coupling and with a Holstein-like light-matter interaction, by employing the diagrammatic Keldysh nonequilibrium Green's function approach. We compute out-of-equilibrium properties of the cavity: its transmission, phase response, mean photon number, power spectrum, and spectral function. We show that by the careful engineering of these hybrid light-matter systems, one can achieve a significant amplification of the optical signal with the voltage-biased electronic system serving as a gain medium. We also study the steady-state current across the device, identifying elastic and inelastic tunneling processes which involve the cavity mode. Our results show how recent advances in quantum electronics can be exploited to build hybrid light-matter systems that behave as microwave amplifiers and photon source devices. The diagrammatic Keldysh approach is primarily discussed for a cavity-coupled double quantum dot architecture, but it is generalizable to other hybrid light-matter systems.

  4. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy

    DOE PAGES

    Li, Qian; Jesse, Stephen; Tselev, Alexander; Collins, Liam; Yu, Pu; Kravchenko, Ivan; Kalinin, Sergei V.; Balke, Nina

    2015-01-05

    In this paper, nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical andmore » electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. Finally, with many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies.« less

  5. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy

    SciTech Connect

    Li, Qian; Jesse, Stephen; Tselev, Alexander; Collins, Liam; Yu, Pu; Kravchenko, Ivan; Kalinin, Sergei V.; Balke, Nina

    2015-01-05

    In this paper, nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical and electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. Finally, with many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies.

  6. Final report on COOMET.EM-S5: Supplementary comparison of AC voltage ratio standards (COOMET project 396/UA/07)

    NASA Astrophysics Data System (ADS)

    Kikalo, V. N.; Petrovich, M. L.; Lobzhanidze, N. G.; Kisilev, V. V.; Styblikova, R.

    2013-01-01

    The comparison COOMET No 396/UA/07 of AC voltage ratio standards is registered in the BIPM key comparison database (KCDB) as supplementary comparison COOMET.EM-S5. It was conducted from June 2008 to July 2010 and involved the National Metrology Institutes of the Republic of Belarus, Georgia, the Russian Federation, the Czech Republic and Ukraine. SE "Ukrmetrteststandard" (Ukraine) was the Pilot laboratory for this exercise. The final report lists all data of measurement results and declared uncertainties as obtained by the participating NMIs. The degrees to which the values of the national standards correspond to the reference values of the supplementary comparison are quantitatively evaluated with the conclusions that the results obtained are recognized to be consistent taking into account the declared uncertainties. This gives evidence for supporting the corresponding Calibration and Measurement Capabilities for those values of voltage ratio at which NMIs have performed measurements. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by COOMET, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  7. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    SciTech Connect

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  8. Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Kannan, R.; Loganathan, S.

    2014-05-01

    Present work involves the preparation of Zirconium Nitride thin films on stainless steel (SS) (304L grade) substrate by reactive cylindrical magnetron sputtering method. The X-ray diffraction (XRD) profile of the ZrN thin films prepared with different bias voltage conforms face centered cubic structure with preferred orientation along the (111) plane at lower bias voltage (100 V) and at higher bias voltage (300 V) the preferred orientation shifted to (220) plane. The influences of bias voltage on the thickness and microhardness ZrN thin films have been studied. ZrN thin film sputtered with 300 V bias voltage shows the maximum reflectance of 90% at a wavelength of 1000 nm. The coated substrates have been found to exhibit improved corrosion resistance compared to the SS plate. The root mean square surface roughness and surface morphology were investigated from 3D atomic force microscope (AFM) images and scanning electron microscope (SEM), which indicate smooth and uniform surface pattern without any pin holes.

  9. SPEAR-1: An experiment to measure current collection in the ionosphere by high voltage biased conductors

    NASA Technical Reports Server (NTRS)

    Raitt, W. John; Myers, Neil B.; Roberts, Jon A.; Thompson, D. C.

    1990-01-01

    An experiment is described in which a high electrical potential difference, up to 45 kV, was applied between deployed conducting spheres and a sounding rocket in the ionosphere. Measurements were made of the applied voltage and the resulting currents for each of 24 applications of different high potentials. In addition, diagnostic measurements of optical emissions in the vicinity of the spheres, energetic particle flow to the sounding rocket, dc electric field and wave data were made. The ambient plasma and neutral environments were measured by a Langmuir probe and a cold cathode neutral ionization gauge, respectively. The payload is described and examples of the measured current and voltage characteristics are presented. The characteristics of the measured currents are discussed in terms of the diagnostic measurements and the in-situ measurements of the vehicle environment. In general, it was found that the currents observed were at a level typical of magnetically limited currents from the ionospheric plasma for potentials less than 12 kV, and slightly higher for larger potentials. However, due to the failure to expose the plasma contactor, the vehicle sheath modified the sphere sheaths and made comparisons with the analytic models of Langmuir-Blodgett and Parker-Murphy less meaningful. Examples of localized enhancements of ambient gas density resulting from the operation of the attitude control system thrusters (cold nitrogen) were obtained. Current measurements and optical data indicated localized discharges due to enhanced gas density that reduced the vehicle-ionosphere impedance.

  10. Influence of temperature and bias voltage on the performance of a high resolution PET detector built with position sensitive avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Vandenbroucke, A.; McLaughlin, T. J.; Levin, C. S.

    2012-08-01

    We evaluate the performance of an 8 × 8 array of 0.9 × 0.9 × 1 mm3 cerium doped lutetium oxyothosilicate (LSO) crystals coupled to a position sensitive avalanche photodiode (PSAPD) as a function of bias voltage and temperature. We use this detector to develop a general methodology to optimize bias voltage, temperature, and gain for PET detectors using semiconductor photodetectors. This detector module will be used in a novel high resolution positron emission tomography (PET) camera dedicated to breast imaging under construction in our lab. Due to the tight packing of many PSAPDs in the system a thermal gradient is expected across the imaging heads. Data were collected for 11 PSAPD temperatures between 5°C and 40°C using a thermo-electric (Peltier) device. At each temperature the bias voltage was varied in steps of 5 V over a 50 V range. We present three methods to predict the optimal bias voltage at every temperature: one based on optimizing the coincidence time resolution, the others based on the relative change in PSAPD gain and leakage current due to the onset of hole multiplication. Optimal gain could also be predicted based on the quality of the flood histogram. At optimal bias voltage, the energy resolution degrades as (10.5±0.1)+((0.038±0.006)/ °C·T)%. Time resolution stays constant at 2.37±0.02 ns below 15°C. Above this temperature, time resolution deteriorates as (1.67±0.06)+((0.042±0.002)/°C·T)ns. Even at high temperatures, all 64 crystal position peaks in the flood histogram are still clearly visible. The width of the peaks in the flood histogram show a quadratic degradation with temperature: (2.6±0.1)·10-2+(1.6±0.2)·10-5/(°C)2·T2. We conclude that both the quality of the flood histogram as well as the coincidence time resolution are better parameters to estimate the optimal bias voltage, than energy resolution. Optimal bias voltage is found to be dependent on the value of k, the ratio between hole and electron multiplication. We

  11. Bias voltage dependence of two-step photocurrent in GaAs/AlGaAs quantum well solar cells

    NASA Astrophysics Data System (ADS)

    Noda, T.; Elborg, M.; Mano, T.; Kawazu, T.; Han, L.; Sakaki, H.

    2016-02-01

    We investigated photoresponses of AlGaAs solar cells in which coupled GaAs quantum wells were embedded in the i-region of p-i-n diodes; we studied how the bias voltage Vb affects the normal photocurrent I generated by the visible light and a "two-step" photocurrent ΔI generated by the absorption of visible and infrared photons. We found that as Vb exceeds -0.2 V, ΔI rises and peaks at 0.6 V, while the normal photocurrent I falls to about half of its saturated level. These findings are discussed in terms of a rate equation model to show that ΔI is mainly determined by the balance of escape and recombination of photogenerated carriers.

  12. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    NASA Astrophysics Data System (ADS)

    Zheng, Zhi; Li, Wei; Li, Ping

    2013-04-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX). At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  13. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Subramanian, N. Sankara; Loganathan, S.; Kannan, R.

    2014-04-01

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  14. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  15. Effect of bias voltage on tunneling mechanism in Co40Fe40B20/MgO/Co40Fe40B20 pseudo-spin valve

    NASA Astrophysics Data System (ADS)

    Yıldırım, Mustafa; Öksüzoğlu, Ramis Mustafa

    2015-04-01

    Bias voltage dependence of tunneling mechanism has been systematically investigated in Co40Fe40B20 (2.1 nm)/MgO (2 nm)/Co40Fe40B20 (1.7 nm) pseudo-spin valve magnetic tunnel junction deposited using the combination of the pulsed DC unbalanced magnetron and RF magnetron sputtering techniques. Structural investigations revealed polycrystalline and partially (001) oriented growth of CoFeB/MgO(001) MTJ with similar low interface roughness on both side of the MgO barrier. The junction with a 25×25 μm2 area indicates a giant tunnel magnetoresistance in the order of 505% at room temperature. The magnetoresistance ratio decreases with increasing applied bias voltage ranging from 0.5 to 1.8 V. Reasonable values for barrier thickness and heights were obtained using the combination of Brinkman and Gundlach models, including average barrier height and symmetry. Both barrier parameters and the tunneling mechanism vary in dependence of applied bias voltage. The tunneling mechanism indicates a change from direct to the FN tunneling, especially when reaching high bias voltages. Effect of the tunneling mechanism on the bias dependence of the magnetoresistance was also discussed.

  16. Monte Carlo study of strongly interacting degenerate fermions: A model for voltage-biased bilayer graphene

    NASA Astrophysics Data System (ADS)

    Armour, Wes; Hands, Simon; Strouthos, Costas

    2013-03-01

    We formulate a model of Nf=4 flavors of relativistic fermion in 2+1d in the presence of a chemical potential μ coupled to two flavor doublets with opposite sign, akin to isospin chemical potential in QCD. This is argued to be an effective theory for low energy electronic excitations in bilayer graphene, in which an applied voltage between the layers ensures equal populations of particles on one layer and holes on the other. The model is then reformulated on a spacetime lattice using staggered fermions, and in the absence of a sign problem, simulated using an orthodox hybrid Monte Carlo algorithm. With the coupling strength chosen to be close to a quantum critical point believed to exist for Nf

  17. AFM-induced amine deprotection: triggering localized bond cleavage by application of tip/substrate voltage bias for the surface self-assembly of nanosized dendritic objects.

    PubMed

    Fresco, Zachary M; Suez, Itai; Backer, Scott A; Fréchet, Jean M J

    2004-07-14

    An alpha,alpha-dimethyl-3,5-dimethoxybenzyloxycarbonyl (DDZ)-protected amine monolayer can be selectively deprotected by the application of a voltage bias from a conducting AFM tip to afford localized nanoscale patterns that can be visualized by self-assembly of dendritic molecular objects with terminal carboxylic acid groups and different aspect ratios.

  18. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  19. Abnormal behavior of threshold voltage shift in bias-stressed a-Si:H thin film transistor under extremely high intensity illumination.

    PubMed

    Han, Sang Youn; Park, Kyung Tea; Kim, Cheolkyu; Jeon, Sanghyun; Yang, Sung-Hoon; Kong, Hyang-Shik

    2015-07-22

    We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination.

  20. Electron Transport in Graphene Nanoribbon Field-Effect Transistor under Bias and Gate Voltages: Isochemical Potential Approach.

    PubMed

    Yun, Jeonghun; Lee, Geunsik; Kim, Kwang S

    2016-07-01

    Zigzag graphene nanoribbon (zGNR) of narrow width has a moderate energy gap in its antiferromagnetic ground state. So far, first-principles electron transport calculations have been performed using nonequilibrium Green function (NEGF) method combined with density functional theory (DFT). However, the commonly practiced bottom-gate control has not been studied computationally due to the need to simulate an electron reservoir that fixes the chemical potential of electrons in the zGNR and electrodes. Here, we present the isochemical potential scheme to describe the top/back-gate effect using external potential. Then, we examine the change in electronic state under the modulation of chemical potential and the subsequent electron transport phenomena in zGNR transistor under substantial top-/back-gate and bias voltages. The gate potential can activate the device states resulting in a boosted current. This gate-controlled current-boosting could be utilized for designing novel zGNR field effect transistors (FETs). PMID:27299184

  1. The Dependence of Nucleation Density on the Bias Voltage in the Growth of High Quality Thick Heteroepitaxial Diamond Films on Ir/YSZ/Si(100) Substrates Using Microwave Plasma Chemical Vapor Deposition

    SciTech Connect

    Regmi, Murari; More, Karren Leslie; Eres, Gyula

    2012-01-01

    We report nucleation densities on Ir(100) surfaces that exceed 1011 cm-2 and remain roughly unchanged in a narrow bias voltage range of 50 V starting at 125 V. At lower and higher bias voltages outside of this window the nucleation density drops to values near zero within a 25 V step and remains independent of the bias voltage. We attribute this extreme sensitivity to a delicate nanostructured active Ir phase that is both formed and destroyed by ion bombardment with specific energies. The role of this phase is to mediate the formation of chemically specific carbon that is the precursor for diamond crystallite formation in the subsequent bias free growth stage.

  2. Measurement of electron temperature and ion density using the self-bias effect in plasmas

    SciTech Connect

    Hwang, Kwang-Tae; Oh, Se-Jin; Choi, Ik-Jin; Chung, Chin-Wook

    2010-06-15

    For novel plasma diagnostics, the rf floating probe was revisited. For inducing the self-bias effect, ac bias voltage (approxkilohertz) was applied through a dc blocking capacitor between a probe and a signal generator. The dc self-bias potential was changed not only with ac bias voltages but also with electron temperatures, and therefore, the electron temperature was derived from the variations in the self-bias potential with and without ac bias voltage. The harmonic component of the probe contains information about the ion flux, and using a fast Fourier transform analysis of the probe current, the ion density was derived from the first harmonic current of the probe. The experimental results were compared with a single Langmuir probe. The electron temperature and the ion density were in good agreement with those from the Langmuir probe. Because the amplitude of the ac bias voltage is very low (<3 V), local ionizations affected by a high bias-voltage can be neglected.

  3. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    SciTech Connect

    Obaidulla, SK. Md. Goswami, D. K. E-mail: dipak@phy.iitkgp.ernet.in; Giri, P. K.

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  4. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal–semiconductor–metal structure by varying the bias voltage

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1‑x O/ZnO metal–semiconductor–metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1‑x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1‑x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1‑x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1‑x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345–400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1–2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1‑x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1‑x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1‑x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1‑x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345–400 nm), the MSM-PDs demonstrate a short-wavelength band (320–345 nm) at a 3 V bias voltage.

  5. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage.

  6. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage.

    PubMed

    Hwang, J D; Lin, G S

    2016-09-16

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage. PMID:27501372

  7. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Barquinha, P. M. C.; Martins, R. F. P.; Cobb, B.; Powell, M. J.; Flewitt, A. J.

    2016-02-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  8. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  9. Ac Josephson effect in hysteretic junctions: Range and stability of phase lock

    SciTech Connect

    Kautz, R.L.

    1981-05-01

    The rf-induced constant voltage steps generated by the ac Josephson effect are studied within the context of the Stewart-McCumber model. Simulations are used to determine the range of current bias over which phase lock occurs for model parameters appropriate to hysteretic tunnel junctions. The effect of noise on phase lock is also considered. The results are applied to a zero-bias voltage standard proposed by Levinsen et al.

  10. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    SciTech Connect

    Flewitt, A. J.; Powell, M. J.

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  11. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    NASA Astrophysics Data System (ADS)

    Jun-Ting, Yu; Shu-Ming, Chen; Jian-Jun, Chen; Peng-Cheng, Huang; Rui-Qiang, Song

    2016-04-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030).

  12. Asymmetric synthesis of crambescin A-C carboxylic acids and their inhibitory activity on voltage-gated sodium channels.

    PubMed

    Nakazaki, Atsuo; Nakane, Yoshiki; Ishikawa, Yuki; Yotsu-Yamashita, Mari; Nishikawa, Toshio

    2016-06-21

    Synthesis of both enantiomers of crambescin B carboxylic acid is described. A cis-enyne starting material was epoxidized under the conditions of Katsuki asymmetric epoxidation to give 95% ee of the epoxide, which was transformed to crambescin B carboxylic acid via bromocation-triggered cascade cyclization as the key step. Enantiomerically pure crambescin A and C carboxylic acids were also synthesized from the product of the cascade reaction. Structure-activity relationship (SAR) studies against voltage-gated sodium channel (VGSC) inhibition using those synthetic compounds revealed that the natural enantiomer of crambescin B carboxylic acid was most active and comparable to tetrodotoxin, and the unalkylated cyclic guanidinium structure is indispensible, while the carboxylate moiety is not important. The absolute stereochemistry of crambescin A was determined by a comparison of the methyl ester derived from natural crambescin A with that derived from the stereochemically defined crambescin A carboxylic acid synthesized in this study.

  13. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

    SciTech Connect

    Pasaja, Nitisak; Sansongsiri, Sakon; Anders, Andre; Vilaithong,Thiraphat; Intasiri, Sawate

    2006-09-10

    Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc (FCVA) plasma sources operated in sequential pulsed mode. A negatively pulsed bias was applied to the substrate only when carbon plasma was generated. Films thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrate for the of the measurement sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of sp2 content and an increase of the sp2 cluster size.

  14. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

    SciTech Connect

    Pasaja, Nitisak; Sansongsiri, Sakon; Intasiri, Sawate; Vilaithong, Thiraphat; Anders, Andre

    2007-01-24

    Metal-containing tetrahedral amorphous carbon films wereproduced by dual filtered cathodic vacuum arc plasma sources operatedinsequentially pulsed mode. Negatively pulsed bias was applied to thesubstrate when carbon plasma was generated, whereas it was absentwhen themolybdenum plasma was presented. Film thickness was measured afterdeposition by profilometry. Glass slides with silver padswere used assubstrates for the measurement of the sheet resistance. Themicrostructure and composition of the films were characterizedbyRamanspectroscopy and Rutherford backscattering, respectively. It was foundthat the electrical resistivity decreases with an increaseof the Mocontent, which can be ascribed to an increase of the sp2 content and anincrease of the sp2 cluster size.

  15. Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltage

    NASA Astrophysics Data System (ADS)

    Adhikary, Sourav; Chakrabarti, Subhananda; Aytac, Yigit; Perera, A. G. U.

    2013-03-01

    The quantum dot infrared photodetector is an emerging technology for advanced imaging. Multi-color imaging technologies are favored as they extend the boundary of applications of the device. We report multi-spectral performance of MBE grown InGaAs/GaAs (device A) and InAs/GaAs (device B) based photodetector with In0.21Al0.21Ga0.58As capping at 77K. Spectral response measurement of device A shows the presence of a strong photoresponse at 10.2μm. Device B exhibits a four color response (5.7, 9.0, 14.5, 17 and 20 μm) over a broad range (5-20μm) at very low bias voltage.

  16. Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers.

    PubMed

    Gao, Li; Jiang, Xin; Yang, See-Hun; Burton, J D; Tsymbal, Evgeny Y; Parkin, Stuart S P

    2007-11-30

    Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state that affects the transmission of the contributing tunneling states through a spin-orbit interaction. PMID:18233308

  17. A scanning tunneling microscope break junction method with continuous bias modulation.

    PubMed

    Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

    2015-09-28

    Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule. PMID:26308622

  18. Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma

    SciTech Connect

    Koda, Tatsunori; Toyota, Hiroshi

    2014-03-15

    The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B{sub C} and substrate DC bias voltage V{sub S} on the Ni film structures were investigated. For V{sub S} = −40 V, the average surface grain size D{sub G} measured by atomic force microscopy for B{sub C} = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D{sub G} increased with V{sub S}. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V{sub S}. For V{sub S} = −40 V and B{sub C} = 3 mT, a film resistivity ρ of 8.96 × 10{sup −6} Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10{sup −6} Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B{sub C} and V{sub S}.

  19. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

    SciTech Connect

    Sogabe, Tomah Ogura, Akio; Okada, Yoshitaka

    2014-02-21

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

  20. ACS after SM4: New Life for an Old Workhorse

    NASA Astrophysics Data System (ADS)

    Golimowski, David; Anderson, Jay; Armstrong, Amber; Arslanian, Steve; Bedin, Luigi; Bohlin, Ralph; Boyce, Kevin; Chapman, George; Cheng, Edward; Chiaberge, Marco; Cox, Colin; Desiardins, Tyler; Dye, Darryl; Ellis, Tracy; Ferguson, Brian; Fruchter, Andrew; Grogin, Norman; Lim, Pey Lian; Loose, Markus; Lucas, Ray; Lupie, Olivia; Mack, Jennifer; Maybhate, Aparna; Mil, Kathleen; Mutchler, Max; Ricardo, Raphael; Scott, Barbara; Serrano, Beverly; Sirianni, Marco; Smith, Linda; Suchkov, Anatoly A.; Waczynski, Augustyn; Welty, Alan; Wheeler, Thomas; Wilson, Erin

    2010-07-01

    The ACS CCD Electronics Box Replacement (CEB-R) installed during SM4 features a Teledyne SIDECAR ASIC that permits optimization of the WFC via adjustment of CCD clock voltages, bias voltages, and pixel transmission timing. An on-orbit campaign to optimize the performance of the WFC was undertaken at the start of the SMOV period. Initial tests with pre-SM4 default voltages and timing patterns showed that WFC's performance matches or exceeds its pre-failure levels, notwithstanding the expected increases in dark current and hot pixels and the decline in charge-transfer efficiency due to prolonged exposure to HST's radiation environment. One WFC CCD exhibited anomalous behavior when operated with nondefault settings of its reset drain voltage. Consequently, the optimization campaign was truncated after two iterations, and ACS science operations commenced with the pre-SM4 default configuration. Several artifacts attributed to the CEB-R appear in post-SM4 WFC images: large-scale but stable bias gradients, low-level but temporally variable horizontal stripes, a signal-dependent bias shift, and amplifier crosstalk. STScI has developed algorithms for the correction or mitigation of these electronic artifacts as well as for the restoration of images affected by continuously degrading CTE. Standalone correction packages are now or will soon be publicly available. These packages will be incorporated into the calacs package of the OPUS data pipeline by September 2011.

  1. Biasing vector network analyzers using variable frequency and amplitude signals.

    PubMed

    Nobles, J E; Zagorodnii, V; Hutchison, A; Celinski, Z

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal. PMID:27587141

  2. Biasing vector network analyzers using variable frequency and amplitude signals

    NASA Astrophysics Data System (ADS)

    Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

  3. Note: high sensitivity self-bias magnetoelectric sensor with two different magnetostrictive materials.

    PubMed

    Chen, Lei; Li, Ping; Wen, Yumei; Zhu, Yong

    2013-06-01

    The self-bias magnetoelectric (ME) sensor is designed, fabricated, and characterized for detecting weak ac magnetic-field. The two different magnetostrictive materials produce the gradient of magnetization, resulting in an internal magnetic field and a strong ME response. At zero-biased dc magnetic field, a low-frequency ME voltage coefficient (dVME∕dHac) of 22.11 mV∕Oe is achieved, which is 17.69 times higher than that of the previous magnets∕0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) sensor. Furthermore, the ME voltage coefficient reaches 2.73 V∕Oe at resonance. The induced ME voltage shows an excellent linear relationship to ac magnetic field when field amplitude varies from ~10(-7) Oe to 1 Oe. PMID:23822388

  4. Final report on SIM bilateral INMETRO-LNE comparisons SIM.EM-K6.1 and SIM.EM-K9.1: AC-DC voltage transfer difference

    NASA Astrophysics Data System (ADS)

    Vasconcellos, Renata de Barros e.; Poletaeff, Andre

    2014-01-01

    The objective of this comparison was to compare the measurement capabilities of INMETRO and LNE in the field of AC-DC voltage transfer. INMETRO participated in the previous SIM comparison of AC-DC voltage transfer standards in 2004. In the last few years INMETRO has been improving the methodology of its AC-DC voltage transfer difference measurements, now using multijunction thermal converters. The degrees of equivalence of INMETRO relative to the corresponding CCEM key comparison reference values range between 0.1 µV/V and 10 µV/V in the frame of the SIM.EM-K6.1 key comparison, and between 0.5 µV/V and 4 µV/V in the frame of the SIM.EM-K9.1 key comparison. In all cases, they are consistent with the associated uncertainties. For results that are not linked to CCEM key comparisons, the agreement between INMETRO and LNE is very good at 1.5 V/50 kHz (0.1 µV/V). At 10 Hz (at 1.5 V and at 1000 V) a larger difference is observed between the two laboratories, which remains nevertheless consistent with the given uncertainties. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  5. Vortex ratchet reversal in an asymmetric washboard pinning potential subject to combined dc and ac stimuli.

    PubMed

    Shklovskij, Valerij A; Sosedkin, Vladimir V; Dobrovolskiy, Oleksandr V

    2014-01-15

    The mixed-state resistive response of a superconductor thin film with an asymmetric washboard pinning potential subject to superimposed dc and ac currents of arbitrary amplitudes and frequency at finite temperature is theoretically investigated. The problem is considered in the single-vortex approximation, relying upon the exact solution of the Langevin equation in terms of a matrix continued fraction. The dc voltage response and the absorbed power in ac response are analyzed as functions of dc bias and ac current amplitude and frequency in a wide range of corresponding dimensionless parameters. Predictions are made of (i) a reversal of the rectified voltage at small dc biases and strong ac drives and (ii) a non-monotonic enhancement of the absorbed power in the nonlinear ac response at far sub-depinning frequencies. It is elucidated how and why both these effects appear due to the competition of the fixed internal and the tunable, dc bias-induced external asymmetry of the potential as the only reason. This is distinct from other scenarios used for explaining the vortex ratchet reversal effect so far. PMID:24304564

  6. Operation Method for AC Motor Control during Power Interruption in Direct AC/AC Converter System

    NASA Astrophysics Data System (ADS)

    Shizu, Keiichiro; Azuma, Satoshi

    Direct AC/AC converters have been studied due to their potential use in power converters with no DC-link capacitor, which can contribute to the miniaturization of power converters. However, the absence of a DC-link capacitor makes it difficult to control the AC motor during power interruption. First, this paper proposes a system that realizes AC motor control during power interruption by utilizing a clamp capacitor. In general, direct AC/AC converters have a clamp circuit consisting of a rectifier diode(s) and a clamp capacitor in order to avoid over-voltages. In the proposed system, there is an additional semiconductor switch reverse-parallel to the rectifier diode(s), and the clamp capacitor voltage can be utilized for AC motor control by turning on the additional switch. Second, this paper discusses an operation method for AC motor control and clamp capacitor voltage control during power interruption. In the proposed method “DC-link voltage control”, the kinetic energy in the AC motor is transformed into electrical energy and stored in the clamp capacitor; the clamp capacitor is therefore charged and the capacitor voltage is controlled to remain constant at an instruction value. Third, this paper discusses a switching operation during power interruption. A dead-time is introduced between the operation of turning off all switches on the rectifier side and the operation of turning on the additional switch, which prevents the occurrence of a short circuit between the interrupted power source and the clamp capacitor. Finally, experimental results are presented. During power interruptions, an output current was continuously obtained and the clamp capacitor voltage was maintained to be equal to the instruction value of the capacitor voltage. These results indicate that both AC motor control and capacitor voltage control were successfully achieved by using the proposed system.

  7. Effects Of Pressure And Power On The Ionic Saturation Current And Self-Bias Voltage In A RF Discharge 13.56 MHz Of (SF{sub 6}, O{sub 2}) At Low Pressure

    SciTech Connect

    Alim, M. M.; Zekara, M.; Henni, L.; Tadjine, R.; Lahmar, E.; Henda, K.

    2008-09-23

    In the present work, we are interested in RF plasma discharge for surface texturing in solar cells application. We then present the results of the electrical characterization of plasma reactor at low pressure (<1 Torr) in (SF{sub 6},O{sub 2}) gases mixtures at 13.56 MHz. We've particularly followed the self-bias voltage (V{sub DC}) and the density of ionic current saturation (J{sub s}) depending in various parameters of the discharge as pressure and power.

  8. Suppression of spatially periodic patterns by dc voltage

    NASA Astrophysics Data System (ADS)

    Éber, Nándor; Salamon, Péter; Fekete, Balázs András; Karapinar, Ridvan; Krekhov, Alexei; Buka, Ágnes

    2016-04-01

    The effect of superposed dc and ac applied voltages on two types of spatially periodic instabilities in nematic liquid crystals, flexoelectric domains (FD), and electroconvection (EC) was studied. The onset characteristics, threshold voltages, and critical wave vectors were determined. We found that in general the superposition of driving with different time symmetries inhibits the pattern forming mechanisms for FD and EC as well. As a consequence, the onset extends to much higher voltages than the individual dc or ac thresholds. A dc-bias-induced reduction of the crossover frequency from the conductive to the dielectric EC regimes and a peculiar transition between two types of flexodomains with different wavelengths were detected. Direct measurements of the change of the electrical conductivity and its anisotropy, induced by the applied dc voltage component, showed that the dc bias substantially affects both parameters. Taking into account the experimentally detected variations of the conductivity in the linear stability analysis of the underlying nematohydrodynamic equations, a qualitative agreement with the experimental findings on the onset behavior of spatially periodic instabilities was obtained.

  9. Creation and Annihilation of Fluxons in ac-driven Semiannular Josephson Junction

    NASA Astrophysics Data System (ADS)

    Nayak, Chitra R.; Kuriakose, V. C.

    2011-04-01

    A new geometry (semiannular) for Josephson junction has been proposed and theoretical studies have shown that the new geometry is useful for electronic applications [1, 2]. In this work we study the voltage-current response of the junction with a periodic modulation. The fluxon experiences an oscillating potential in the presence of the ac-bias which increases the depinning current value. We show that in a system with periodic boundary conditions, average progressive motion of fluxon commences after the amplitude of the ac drive exceeds a certain threshold value. The analytic studies are justified by simulating the equation using finite-difference method. We observe creation and annihilation of fluxons in semiannular Josephson junction with an ac-bias in the presence of an external magnetic field.

  10. Negative hydrogen ion beam extraction from an AC heated cathode driven Bernas-type ion source

    SciTech Connect

    Okano, Y.; Miyamoto, N.; Kasuya, T.; Wada, M.

    2015-04-08

    A plasma grid structure was installed to a Bernas-type ion source used for ion implantation equipment. A negative hydrogen (H{sup −}) ion beam was extracted by an AC driven ion source by adjusting the bias to the plasma grid. The extracted electron current was reduced by positively biasing the plasma grid, while an optimum plasma grid bias voltage for negative ion beam extraction was found to be positive 3 V with respect to the arc chamber. Source operations with AC cathode heating show extraction characteristics almost identical to that with DC cathode heating, except a minute increase in H{sup −} current at higher frequency of cathode heating current.

  11. UPS with input commutation between ac and dc sources of power

    SciTech Connect

    Severinsky, A.J.

    1993-08-31

    An uninterruptible power supply is described, said power supply comprising: AC input terminal means for receiving a first AC voltage from an AC power source; DC input terminal means for receiving a first DC voltage from a DC power source; AC output terminal means for connecting to a load; converter means for converting said first AC voltage to a second DC voltage across electrical charge storage means coupled to said converter means, said second DC voltage being larger than the maximum peak voltage of said first AC voltage and said first DC voltage; switching means coupled to said AC power source and said DC power source for selectively connecting said AC power source or said DC power source to said converter means; inverter means coupled to said electrical charge storage means for receiving said second DC voltage and inverting said second DC voltage to a second AC voltage, said second AC voltage being coupled to said AC output terminal means; and control means coupled to said switching means for controlling the operation of said switching means, said control means operating said switching means to connect said AC power source to said converter means only when said first AC voltage is within a predetermined range and operating to connect said DC power source to said converter means when said first AC voltage is outside of said range.

  12. First- and second-harmonic detection of spin accumulation in a multiterminal lateral spin valve under high-bias ac current

    NASA Astrophysics Data System (ADS)

    Hu, Shaojie; Nomura, Tatsuya; Uematsu, Ginga; Asam, Nagarjuna; Kimura, Takashi

    2016-07-01

    We have investigated the transport properties of electrically and thermally excited spin currents in a lateral spin valve consisting of a spin injector and detector with a middle ferromagnetic wire by detecting the first- and second-harmonic voltages. The first-harmonic spin signal was significantly suppressed by the middle ferromagnetic wire because of the spin absorption effect. On the other hand, in the second-harmonic signal, a small signal related to the middle ferromagnetic wire was observed in addition to a conventional spin signal with a reduced magnitude. This indicates that the additional ferromagnetic wire acts not only as the spin absorber but also as another spin injector under thermal spin injection, because the heat current caused by direct spin injection propagates to the middle ferromagnetic wire and creates another temperature gradient. By using this effect, we show that the magnetization direction of a ferromagnetic nanodot embedded in a nonmagnetic Cu wire becomes measurable.

  13. Digital ac monitor

    DOEpatents

    Hart, G.W.; Kern, E.C. Jr.

    1987-06-09

    An apparatus and method is provided for monitoring a plurality of analog ac circuits by sampling the voltage and current waveform in each circuit at predetermined intervals, converting the analog current and voltage samples to digital format, storing the digitized current and voltage samples and using the stored digitized current and voltage samples to calculate a variety of electrical parameters; some of which are derived from the stored samples. The non-derived quantities are repeatedly calculated and stored over many separate cycles then averaged. The derived quantities are then calculated at the end of an averaging period. This produces a more accurate reading, especially when averaging over a period in which the power varies over a wide dynamic range. Frequency is measured by timing three cycles of the voltage waveform using the upward zero crossover point as a starting point for a digital timer. 24 figs.

  14. Digital ac monitor

    DOEpatents

    Hart, George W.; Kern, Jr., Edward C.

    1987-06-09

    An apparatus and method is provided for monitoring a plurality of analog ac circuits by sampling the voltage and current waveform in each circuit at predetermined intervals, converting the analog current and voltage samples to digital format, storing the digitized current and voltage samples and using the stored digitized current and voltage samples to calculate a variety of electrical parameters; some of which are derived from the stored samples. The non-derived quantities are repeatedly calculated and stored over many separate cycles then averaged. The derived quantities are then calculated at the end of an averaging period. This produces a more accurate reading, especially when averaging over a period in which the power varies over a wide dynamic range. Frequency is measured by timing three cycles of the voltage waveform using the upward zero crossover point as a starting point for a digital timer.

  15. On double exponential forward bias current-voltage (I-V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80-340 K

    NASA Astrophysics Data System (ADS)

    Marıl, E.; Altındal, Ş.; Kaya, A.; Koçyiğit, S.; Uslu, İ.

    2015-04-01

    Current transport mechanisms (CTMs) of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures were investigated using current-voltage (I-V) characteristics in the temperature range of 80-340 K. Semilogarithmic I-V plots show two linear regions corresponding to low (0.075-0.250 V) and moderate (0.27-0.70 V) biases, respectively. Zero-bias barrier height (ΦB0) was observed to increase with increase in the temperature, whereas opposite behaviour was observed for ideality factor (n). ΦB0 and (n-1-1) vesus q/2kT and ΦB0 versus n plots were drawn to get an evidence of Gaussian distribution (GD) of the barrier heights. These plots, too, show two linear regions corresponding to low (80-160 K) and high (200-340 K) temperature ranges (LTR and HTR), respectively. Mean value of barrier height (?B0) and standard deviation (σs) were extracted from the intercept and slope of ΦB0 versus q/2kT plots for two linear regions as 0.382 eV, 0.0060 V for LTR and 0.850 eV, 0.135 V for HTR at low biases and 0.364 eV, 0.0059 V for LTR and 0.806 eV, 0.132 V for HTR at high biases, respectively. ?B0 and Richardson constant (A*) values were also obtained from the intercept and slope of the modified Richardson (Ln(Io/T2)-(q2σs2/2k2T2) versus q/kT) plots as 131.81 Acm-2 K-2, 0.381 eV for LTR and 129.35 Acm-2 K-2, 0. 854 eV for HTR at low biases and 148.01 Acm-2 K-2, 0.377 eV for LTR and 143.77 Acm-2 K-2, 0.812 eV for HTR at high biases, respectively. In conclusion, CTM in the structure can be successfully explained in terms of thermionic emission theory with the double GD of barrier heights.

  16. ACS after Servicing Mission 4: The WFC Optimization Campaign

    NASA Astrophysics Data System (ADS)

    Golimowski, David; Cheng, Ed; Loose, Markus; Sirianni, Marco; Lupie, Olivia; Smith, Linda; Arslanian, Steve; Boyce, Kevin; Chapman, George; Chiaberge, Marco; Desjardins, Tyler; Dye, Darryl; Grogin, Norman; Lim, Pey Lian; Lucas, Ray; Maybhate, Aparna; Mil, Kathleen; Mutchler, Max; Ricardo, Raphael; Scott, Barbara; Serrano, Beverly; Suchkov, Anatoly; Waczynski, Augustyn; Welty, Alan; Wheeler, Thomas; Wilson, Erin

    2011-07-01

    The ACS CCD Electronics Box Replacement (CEB-R) installed during SM4 features a Teledyne SIDECAR ASIC that permits optimization of the WFC via adjustment of CCD clock voltages, bias voltages, and pixel transmission timing. A built-in oscilloscope mode allows sensing of the analog signal from each output amplifier. An on-orbit campaign to optimize the performance of the WFC was undertaken at the start of the SMOV period. Initial tests with pre-SM4 default voltages and timing patterns showed that WFC's performance matches or exceeds its pre-failure levels, notwithstanding the expected increases in dark current and hot pixels and the decline in charge-transfer efficiency due to prolonged exposure to HST's radiation environment. The WFC2 CCD exhibited anomalous behavior when operated with nondefault settings of its amplifiers' reset-drain voltage (VOD). The CCD again displayed normal behavior when VOD was restored to its default setting. Consequently, the Optimization Campaign was truncated after two iterations, and ACS science operations commenced with the pre-SM4 default configuration.

  17. A novel high-sensitivity electrostatic biased electric field sensor

    NASA Astrophysics Data System (ADS)

    Huang, Jing'ao; Wu, Xiaoming; Wang, Xiaohong; Yan, Xiaojun; Lin, Liwei

    2015-09-01

    In this paper, an electric field sensor (EFS) with high sensitivity is proposed for low-frequency weak-strength ac electric field (E-field) measurements. The EFS is based on a piezoelectric cantilever biased by a strong electrostatic field. The electrostatic bias can enhance the electric field force of a weak ac E-field, thus the cantilever can oscillate in a weak ac E-field and the device sensitivity improves. Theoretical analyses have been established and suggest that a stronger strength of electrostatic field bias would produce a higher sensitivity improvement. In the experiment, a demonstrated sensor consisting of a polyvinylidene fluoride (PVDF) piezoelectric cantilever and a polytetrafluoroethylene (PTFE) electret was built and tested. Instead of extra voltage sources, the PTFE electret was charged to provide the electrostatic field, allowing the EFS a low energy consumption and a simple electric circuit design. The experiment results show good agreement with the simulation. The sensitivity of the cantilever E-field sensor reached 0.84 mV (kV/m)-1 when the surface potential of the electret was  -770 V.

  18. AC and DC power transmission

    SciTech Connect

    Not Available

    1985-01-01

    The technical and economic assessment of AC and DC transmission systems; long distance transmission, cable transmission, system inter-connection, voltage support, reactive compensation, stabilisation of systems; parallel operation of DC links with AC systems; comparison between alternatives for particular schemes. Design and application equipment: design, testing and application of equipment for HVDC, series and shunt static compensated AC schemes, including associated controls. Installations: overall design of stations and conductor arrangements for HVDC, series and shunt static AC schemes including insulation co-ordination. System analysis and modelling.

  19. ac bidirectional motor controller

    NASA Technical Reports Server (NTRS)

    Schreiner, K.

    1988-01-01

    Test data are presented and the design of a high-efficiency motor/generator controller at NASA-Lewis for use with the Space Station power system testbed is described. The bidirectional motor driver is a 20 kHz to variable frequency three-phase ac converter that operates from the high-frequency ac bus being designed for the Space Station. A zero-voltage-switching pulse-density-modulation technique is used in the converter to shape the low-frequency output waveform.

  20. Effect of bias voltage and temperature on lifetime of wireless neural interfaces with Al ₂O₃ and parylene bilayer encapsulation.

    PubMed

    Xie, Xianzong; Rieth, Loren; Caldwell, Ryan; Negi, Sandeep; Bhandari, Rajmohan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2015-02-01

    The lifetime of neural interfaces is a critical challenge for chronic implantations, as therapeutic devices (e.g., neural prosthetics) will require decades of lifetime. We evaluated the lifetime of wireless Utah electrode array (UEA) based neural interfaces with a bilayer encapsulation scheme utilizing a combination of alumina deposited by Atomic Layer Deposition (ALD) and parylene C. Wireless integrated neural interfaces (INIs), equipped with recording version 9 (INI-R9) ASIC chips, were used to monitor the encapsulation performance through radio-frequency (RF) power and telemetry. The wireless devices were encapsulated with 52 nm of ALD Al2O3 and 6 μm of parylene C, and tested by soaking in phosphate buffered solution (PBS) at 57 °C for 4× accelerated lifetime testing. The INIs were also powered continuously through 2.765 MHz inductive power and forward telemetry link at unregulated 5 V. The bilayer encapsulated INIs were fully functional for ∼35 days (140 days at 37 °C equivalent) with consistent power-up frequencies (∼910 MHz), stable RF signal (∼-75 dBm), and 100 % command reception rate. This is ∼10 times of equivalent lifetime of INIs with parylene-only encapsulation (13 days) under same power condition at 37 °C. The bilayer coated INIs without continuous powering lasted over 1860 equivalent days (still working) at 37 °C. Those results suggest that bias stress is a significant factor to accelerate the failure of the encapsulated devices. The INIs failed completely within 5 days of the initial frequency shift of RF signal at 57 °C, which implied that the RF frequency shift is an early indicator of encapsulation/device failure. PMID:25653054

  1. Effect of bias voltage and temperature on lifetime of wireless neural interfaces with Al ₂O₃ and parylene bilayer encapsulation.

    PubMed

    Xie, Xianzong; Rieth, Loren; Caldwell, Ryan; Negi, Sandeep; Bhandari, Rajmohan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2015-02-01

    The lifetime of neural interfaces is a critical challenge for chronic implantations, as therapeutic devices (e.g., neural prosthetics) will require decades of lifetime. We evaluated the lifetime of wireless Utah electrode array (UEA) based neural interfaces with a bilayer encapsulation scheme utilizing a combination of alumina deposited by Atomic Layer Deposition (ALD) and parylene C. Wireless integrated neural interfaces (INIs), equipped with recording version 9 (INI-R9) ASIC chips, were used to monitor the encapsulation performance through radio-frequency (RF) power and telemetry. The wireless devices were encapsulated with 52 nm of ALD Al2O3 and 6 μm of parylene C, and tested by soaking in phosphate buffered solution (PBS) at 57 °C for 4× accelerated lifetime testing. The INIs were also powered continuously through 2.765 MHz inductive power and forward telemetry link at unregulated 5 V. The bilayer encapsulated INIs were fully functional for ∼35 days (140 days at 37 °C equivalent) with consistent power-up frequencies (∼910 MHz), stable RF signal (∼-75 dBm), and 100 % command reception rate. This is ∼10 times of equivalent lifetime of INIs with parylene-only encapsulation (13 days) under same power condition at 37 °C. The bilayer coated INIs without continuous powering lasted over 1860 equivalent days (still working) at 37 °C. Those results suggest that bias stress is a significant factor to accelerate the failure of the encapsulated devices. The INIs failed completely within 5 days of the initial frequency shift of RF signal at 57 °C, which implied that the RF frequency shift is an early indicator of encapsulation/device failure.

  2. Achieving High Performance in AC-Field Driven Organic Light Sources

    PubMed Central

    Xu, Junwei; Carroll, David L.; Smith, Gregory M.; Dun, Chaochao; Cui, Yue

    2016-01-01

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m2 with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today’s OLEDs in performance. PMID:27063414

  3. Achieving High Performance in AC-Field Driven Organic Light Sources.

    PubMed

    Xu, Junwei; Carroll, David L; Smith, Gregory M; Dun, Chaochao; Cui, Yue

    2016-04-11

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m(2) with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today's OLEDs in performance.

  4. Module Two: Voltage; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will study and learn what voltage is, how it is generated, what AC (alternating current) and DC (direct current) are and why both kinds are needed, and how to measure voltages. The module is divided into six lessons: EMF (electromotive force) from chemical action, magnetism, electromagnetic induction, AC voltage, the…

  5. Punch-through characteristics of FOXFET biased detectors

    NASA Astrophysics Data System (ADS)

    Bacchetta, N.; Bisello, D.; da Ros, R.; Giraldo, A.; Gotra, Yu; Paccagnella, A.; Verzellesi, G.

    1994-08-01

    The main punch-through characteristics have been studied on Field OXide FETs (FOXFETs) used for microstrip biasing in Si detectors. The voltage-current DC curves have been studied on devices with different channel width/length ratios, fabricated on Si substrates with different doping levels. The punch-through threshold voltage depends on the positive charge in the gate oxide, device layout and temperature. The relation between punch-through current and dynamic resistance is insensitive to charge accumulation in the gate oxide induced by irradiation and to different Si donor doping levels. Dynamic resistance however varies as the doping changes from n- to p-type, and it also depends on the Si bulk damage induced by neutron irradiation. The AC impedance will reproduce the DC dynamic resistance, but show also large effects due to parasitic capacitance, which dominates the FOXFET response at high frequency and can affect the detector performance.

  6. Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

    NASA Astrophysics Data System (ADS)

    Şafak Asar, Yasemin; Asar, Tarık; Altındal, Şemsettin; Özçelik, Süleyman

    2015-09-01

    In this study, we investigated temperature and voltage dependence of dielectric properties and ac electrical conductivity (σac) of (AuZn)/TiO2/p-GaAs(110) metal-insulator-semiconductor structures in the temperature range of 80-290 K using the capacitance-voltage ? and conductance-voltage ? measurements at 1 MHz. The intersection/crossing behaviour of C-V plots at sufficiently high forward biases and the increase in σac with increasing temperature was attributed to the lack of sufficient number of enough free charge carriers at low temperatures. The values of the dielectric constant (ε‧), dielectric loss (ε″), loss tangent ?, ac electrical conductivity (σac), the real and imaginary parts of electric modulus (?) were found to be strong functions of temperature and applied bias voltage. The Cole-Cole plots between ? have shown only one semicircle for each temperature. This indicates one of the relaxation processes was suppressed and this can be attributed to the surface polarization effect. On the other hand, ? plot has a peak for each temperature. The ? plots revealed two linear regions with different slopes for sufficiently high forward biases (0.0, 0.5, and 1.0 V) which correspond to low (80-200 K) and moderate/intermediate (230-290 K) temperatures. Thus, the values of activation energy (Ea) were obtained from the slope of these Arrhenius plots for two linear regions as 87.3 and 3.4 meV, respectively, at 1.0 V. On the other hand, Mott plots have only one linear region except for 260 and 290 K and Mott parameters were determined from these plots at 0.0, 0.5 and 1.0 V.

  7. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  8. AC resistance measuring instrument

    DOEpatents

    Hof, P.J.

    1983-10-04

    An auto-ranging AC resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an AC excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance. After the auto-ranging and auto-compensation functions are complete, the microprocessor calculates the resistance of the load from the selected range resistance, the excitation signal, and the load voltage signal, and displays of the measured resistance on a digital display of the instrument. 8 figs.

  9. AC Resistance measuring instrument

    DOEpatents

    Hof, Peter J.

    1983-01-01

    An auto-ranging AC resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an AC excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance. After the auto-ranging and auto-compensation functions are complete, the microprocessor calculates the resistance of the load from the selected range resistance, the excitation signal, and the load voltage signal, and displays of the measured resistance on a digital display of the instrument.

  10. Giant self-biased converse magnetoelectric effect in multiferroic heterostructure with single-phase magnetostrictive materials

    NASA Astrophysics Data System (ADS)

    Zhang, Jitao; Li, Ping; Wen, Yumei; He, Wei; Yang, Aichao; Wang, Decai; Yang, Chao; Lu, Caijiang

    2014-10-01

    Giant self-biased converse magnetoelectric (CME) effects with obvious hysteretic behaviors are systematically investigated in two-phase SmFe2/PZT [Pb(Zr1-x, Tix)O3] multiferroic laminates at room temperature. Taking advantage of the huge anisotropic field of SmFe2 plate, large remnant CME coupling is provoked by this field instead of permanent magnets to bias the laminate. Consequently, bitable magnetization status switching is realized through a smaller ac voltage far below the electric coercive field in the absence of magnetic bias field. Experiments demonstrate that a large remnant CME coefficient (αCME) of 0.007 mG/V is achieved, exhibiting ˜50 times higher CME coefficient than the previous laminate composite multi-phase magnetostrictive plates. These results provide promising applications for realization of high-density magnetoelectric random access memories (MERAMs) devices with lower energy consumption.

  11. Frequency and voltage dependence of series resistance in a solar cell

    NASA Astrophysics Data System (ADS)

    Ogle, Alexander; Cox, Thaddeus; Heath, Jennifer

    While admittance measurements of solar cells are typically conducted in reverse or at zero bias, and analyzed using the depletion approximation, the operating point of the solar cell is in forward bias, and the series resistance is often estimated using IV curves with a high forward current. In this mode, the device is no longer in the depletion regime, and the large number of injected minority carriers alter the transport properties significantly. In our Cu(In,Ga)Se2 devices, we measure negative values of capacitance at high forward bias, which may be linked to injected minority carriers and carrier transport limitations, although our calculations of capacitance may also be influenced by series resistance. In this study, we compare ac and dc measurements of voltage dependent series resistance to try to better understand the negative capacitance signal.

  12. Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

    SciTech Connect

    Lee, Sangwon; Jeon, Kichan; Park, Jun-Hyun; Kim, Sungchul; Kong, Dongsik; Kim, Dong Myong; Kim, Dae Hwan; Kim, Sangwook; Kim, Sunil; Hur, Jihyun; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Park, Youngsoo; Jung, U-In

    2009-09-28

    Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift ({delta}V{sub T}) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced {delta}V{sub T} is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the I{sub DS}-V{sub GS} curve with an insignificant change in the subthreshold slope, as well as the deformation of the C{sub G}-V{sub G} curves.

  13. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  14. Characteristics of plasma grid bias in large-scaled negative ion source

    SciTech Connect

    Kisaki, M.; Tsumori, K.; Ikeda, K.; Nakano, H.; Osakabe, M.; Nagaoka, K.; Takeiri, Y.; Kaneko, O.

    2014-02-15

    The electron density was measured at various bias voltages to understand how the plasma grid bias affects the electron near the plasma grid in large-scaled negative ion sources. It was found that the response of the electron to the bias voltage changes depending on negative ion production processes. The electron density remarkably decreases with increasing the bias voltage in the pure-volume plasma. On the other hand, the electron density depends on the bias voltage weakly in the Cs-seeded plasma. In addition, it was observed that the response of the co-extracted electron current to the bias voltage has similar trend to that of the electron density.

  15. VOLTAGE REGULATOR

    DOEpatents

    Von Eschen, R.L.; Scheele, P.F.

    1962-04-24

    A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

  16. An automatic bridge for inductive voltage dividers

    SciTech Connect

    Chang, P.; Liang, C.P.; Hsiao, J.C.

    1994-12-31

    We describe an automatic, injection-type bridge for inductive voltage divider (IVD) applications at low audio frequencies. We used it to self-calibrate programmable IVDs fabricated in house, by an automated {open_quotes}boot-strap{close_quotes} procedure. It is the heart of our reference standard for ac voltage ratios as well as a calibration system for IVDs.

  17. High-voltage portable pulsed power supply fed by low voltage source

    NASA Astrophysics Data System (ADS)

    Rezanejad, Mohammad; Sheikholeslami, Abdolreza; Adabi, Jafar; Valinejad, Mohammadreza

    2016-05-01

    This article proposes a new structure of voltage multiplier for portable pulsed power applications. In this configuration, which is based on capacitor-diode voltage multiplier, the capacitors are charged by low AC input voltage and discharge through the load in series during pulse generation mode. The proposed topology is achieved by integrating of solid-state switches with conventional voltage multiplier, which can increase the low input voltage step by step and generate high-voltage high-frequency pulsed power across the load. After some discussion, simulations and experimental results are provided to verify the effectiveness of the proposed topology.

  18. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means.

  19. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-07-01

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  20. High Voltage Power Supply Design Guide for Space

    NASA Technical Reports Server (NTRS)

    Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

    2006-01-01

    This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

  1. AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; van de Kuur, J.; Bandler, S.; Bruijn, M.; de Korte, P.; Gao, J. R.; den Hartog, R.; Hijmering, R. A.; Hoevers, H.; Koshropanah, P.; Kilbourne, C.; Lindemann, M. A.; Parra Borderias, M.; Ridder, M.

    2011-01-01

    SRON is developing Frequency Domain Multiplexing (FDM) for the read-out of transition edge sensor (TES) soft x-ray microcalorimeters for the XMS instrument of the International X-ray Observatory and far-infrared bolometers for the SAFARI instrument on the Japanese mission SPICA. In FDM the TESs are AC voltage biased at frequencies from 0.5 to 6 MHz in a superconducting LC resonant circuit and the signal is read-out by low noise and high dynamic range SQUIDs amplifiers. The TES works as an amplitude modulator. We report on several AC bias experiments performed on different detectors. In particular, we discuss the results on the characterization of Goddard Space Flight Center x-ray pixels and SRON bolometers. The paper focuses on the analysis of different read-out configurations developed to optimize the noise and the impedance matching between the detectors and the SQUID amplifier. A novel feedback network electronics has been developed to keep the SQUID in flux locked loop, when coupled to superconducting high Q circuits, and to optimally tune the resonant bias circuit. The achieved detector performances are discussed in view of the instrument requirement for the two space missions.

  2. Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement

    SciTech Connect

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-03-17

    This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1−x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

  3. High-voltage-compatible, fully depleted CCDs

    SciTech Connect

    Holland, Stephen E.; Bebek, Chris J.; Dawson, Kyle S.; Emes, JohnE.; Fabricius, Max H.; Fairfield, Jessaym A.; Groom, Don E.; Karcher, A.; Kolbe, William F.; Palaio, Nick P.; Roe, Natalie A.; Wang, Guobin

    2006-05-15

    We describe charge-coupled device (CCD) developmentactivities at the Lawrence Berkeley National Laboratory (LBNL).Back-illuminated CCDs fabricated on 200-300 mu m thick, fully depleted,high-resistivity silicon substrates are produced in partnership with acommercial CCD foundry.The CCDs are fully depleted by the application ofa substrate bias voltage. Spatial resolution considerations requireoperation of thick, fully depleted CCDs at high substrate bias voltages.We have developed CCDs that are compatible with substrate bias voltagesof at least 200V. This improves spatial resolution for a given thickness,and allows for full depletion of thicker CCDs than previously considered.We have demonstrated full depletion of 650-675 mu m thick CCDs, withpotential applications in direct x-ray detection. In this work we discussthe issues related to high-voltage operation of fully depleted CCDs, aswell as experimental results on high-voltage-compatible CCDs.

  4. Dynamic voltage-current characteristics for a water jet plasma arc

    SciTech Connect

    Yang Jiaxiang; Lan Sheng; Xu Zuoming

    2008-05-05

    A virtual instrument technology is used to measure arc current, arc voltage, dynamic V-I characteristics, and nonlinear conductance for a cone-shaped water jet plasma arc under ac voltage. Experimental results show that ac arc discharge mainly happens in water vapor evaporated from water when heated. However, due to water's cooling effect and its conductance, arc conductance, reignition voltage, extinguish voltage, and current zero time are very different from those for ac arc discharge in gas work fluid. These can be valuable to further studies on mechanism and characteristics of plasma ac discharge in water, and even in gas work fluid.

  5. Voltage modulation of propagating spin waves in Fe

    SciTech Connect

    Nawaoka, Kohei; Shiota, Yoichi; Miwa, Shinji; Tamura, Eiiti; Tomita, Hiroyuki; Mizuochi, Norikazu; Shinjo, Teruya; Suzuki, Yoshishige

    2015-05-07

    The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

  6. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance spectroscopy method

    NASA Astrophysics Data System (ADS)

    Mert, Yıldırım; Perihan, Durmuş; Şemsettin, Altındal

    2013-10-01

    In this study, Al/p—Si and Al/Bi4Ti3O12/p—Si structures are fabricated and their interface states (Nss), the values of series resistance (Rs), and AC electrical conductivity (σac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance—voltage (C—V) and conductance—voltage (G—V) measurements. In addition, the effect of interfacial Bi4Ti3O12 (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy (Ea), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal—semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (NA), built-in potential (Vbi), Fermi energy (EF), image force barrier lowering (Δ Φb), and barrier height (Φb), are extracted using reverse bias C-2—V characteristics as a function of temperature.

  7. A cost-effective self-biased magnetoelectric effect in SrFe12O19/Metglas/Pb(Zr,Ti)O3 laminates

    NASA Astrophysics Data System (ADS)

    Ma, J. N.; Xin, C. Z.; Ma, J.; Lin, Y. H.; Nan, C. W.

    2016-10-01

    By introducing the hard magnetic SrFe12O19 ribbon, a self-biased magnetoelectric laminate—SrFe12O19/Metgals/Pb(Zr,Ti)O3 was successfully designed. Without any external magnetic field, the laminates exhibit giant self-biased ME responses of 1 V (cm Oe)-1 at quasi-static condition, and up to 29 V (cm Oe)-1 at high-frequency resonance. The induced ME voltage shows a good linear relationship to the applied ac magnetic field with amplitude as low as 10-8 T at 1 kHz, and the self-biased ME property presents an outstanding stability in a time span of 12 months.

  8. Rapid and precise measurement of flatband voltage

    NASA Technical Reports Server (NTRS)

    Li, S. P.; Ryan, M.; Bates, E. T.

    1976-01-01

    The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

  9. A Matter of Quantum Voltages

    SciTech Connect

    Sellner, Bernhard; Kathmann, Shawn M.

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. Electron holography is able to measure the variation of voltages in matter and modern supercomputers allow the calculation of quantum voltages with practically unlimited spatial and temporal resolution of bulk systems. Of particular interest is the Mean Inner Potential (Vo) - the spatial average of these voltages. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of Vo for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Furthermore, we predict Vo as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. This research used resources of the National Energy Research Scientific Computing Center, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  10. Optical rectification at visible frequency in biased bilayer graphene

    NASA Astrophysics Data System (ADS)

    Hipolito, F.; Pereira, Vitor M.

    2015-03-01

    The second order response of the electrical current to an electromagnetic field is analyzed within the framework of non-equilibrium many-body perturbation theory for the case of a two-dimensional electronic system such as graphene and its bilayer. The absence of inversion symmetry in a biased graphene bilayer allows a finite DC response in second order to an AC electromagnetic wave. The induced DC current is evaluated for biased bilayer at finite temperature, and its tunability is analyzed as a function of electron density, which can be experimentally varied by means of a global gate voltage applied to the sample. Both intrinsic and photon drag microscopic processes are considered, as they contribute on similar footing to the photocurrent in general. However, the dependencies of these two contributions on the polarization state of the incident light are different, which allows the manipulation of the relative contribution of intrinsic versus photon drag contributions by tuning the experimental parameters. For example, the photocurrent emerging from circularly polarized light stems entirely from photon drag, as the circular photogalvanic effect is forbidden by the C3 rotation symmetry of the honeycomb lattice.

  11. System and method for determining stator winding resistance in an AC motor using motor drives

    DOEpatents

    Lu, Bin; Habetler, Thomas G; Zhang, Pinjia

    2013-02-26

    A system and method for determining the stator winding resistance of AC motors is provided. The system includes an AC motor drive having an input connectable to an AC source and an output connectable to an input terminal of an AC motor, a pulse width modulation (PWM) converter having switches therein to control current flow and terminal voltages in the AC motor, and a control system connected to the PWM converter. The control system generates a command signal to cause the PWM converter to control an output of the AC motor drive corresponding to an input to the AC motor, selectively generates a modified command signal to cause the PWM converter to inject a DC signal into the output of the AC motor drive, and determines a stator winding resistance of the AC motor based on the DC signal of at least one of the voltage and current.

  12. Self regulating body bias generator

    NASA Technical Reports Server (NTRS)

    Hass, Kenneth (Inventor)

    2004-01-01

    The back bias voltage on a functional circuit is controlled through a closed loop process. A delay element receives a clock pulse and produces a delay output. The delay element is advantageously constructed of the same materials as the functional circuit so that the aging and degradation of the delay element parallels the degradation of the functional circuit. As the delay element degrades, the transistor switching time increases, increasing the time delay of the delay output. An AND gate compares a clock pulse to an output pulse of the delay element, the AND output forming a control pulse. A duty cycle of the control pulse is determined by the delay time between the clock pulse and the delay element output. The control pulse is received at the input of a charge pump. The charge pump produces a back bias voltage which is then applied to the delay element and to the functional circuit. If the time delay produced by the delay element exceeds the optimal delay, the duty cycle of the control pulse is shortened, and the back bias voltage is lowered, thereby increasing the switching speed of the transistors in the delay element and reducing the time delay. If the throughput of the delay element is too fast, the duty cycle of the control pulse is lengthened, raising the back bias voltage produced by the charge pump. This, in turn, lowers the switching speed of the transistors in both the delay element and the functional circuit. The slower switching speed in the delay element increases time delay. In this manner, the switching speed of the delay element, and of the functional circuit, is maintained at a constant level over the life of the circuit.

  13. Recovery of consciousness in broilers following combined dc and ac stunning

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Broilers in the United States are typically electrically stunned using low voltage-high frequency pulsed DC water bath stunners and in the European Union broilers are electrocuted using high voltage-low frequency AC. DC stunned broilers regain consciousness in the absence of exsanguination and AC st...

  14. Power factor control system for AC induction motors

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1977-01-01

    A power factor control system for use with ac induction motors was designed which samples lines voltage and current through the motor and decreases power input to the motor proportional to the detected phase displacement between current and voltage. This system provides, less power to the motor, as it is less loaded.

  15. High-voltage supply for neutron tubes in well-logging applications

    DOEpatents

    Humphreys, D.R.

    1982-09-15

    A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  16. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    NASA Astrophysics Data System (ADS)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  17. Voltage Controller

    NASA Technical Reports Server (NTRS)

    1997-01-01

    Power Efficiency Corporation, specifically formed to manufacture and develop products from NASA technology, has a license to a three-phase power factor controller originally developed by Frank Nola, an engineer at Marshall Space Flight Center. Power Efficiency and two major distributors, Performance Control and Edison Power Technologies, use the electronic control boards to assemble three different motor controllers: Power Commander, Performance Controller, and Energy Master. The company Power Factor Controller reduces excessive energy waste in AC induction motors. It is used in industries and applications where motors operate under variable loads, including elevators and escalators, machine tools, intake and exhaust fans, oil wells, conveyors, pumps, die casting, and compressors. Customer lists include companies such as May Department Stores, Caesars Atlantic City, Ford Motors, and American Axle.

  18. Mechanically Biased, Hinged Pairs of Piezoelectric Benders

    NASA Technical Reports Server (NTRS)

    Sager, Frank E.

    2005-01-01

    The upper part of the figure depicts an actuator that comprises two mechanically biased piezoelectric benders hinged together at their ends and equipped with tabs at their mid-length points for attachment to the relatively moving objects that are to be actuated. In the example of the figure, the attachment tabs are labeled to indicate that the actuator is used to drive a pump piston relative to a base plate. Actuators of this type could be used to drive low-power, small-volume pumps in consumer, medical, and aerospace applications, and to generate and measure linear displacements in such robotic applications as teleoperation and tactile feedback. Each bender is a bimorph a unitary plate that comprises an upper and a lower piezoelectric layer plus electrode layers. Benders may also be made of several layers arranged to produce the same effect at the lower operating voltages. As stated above, each bender is mechanically biased; it is fabricated to have a small permanent curvature (the bias curvature) in the absence of applied voltage. As on other bimorphs, the electrical connections on each bender are arranged so that an applied voltage of suitable polarity causes the upper layer to expand and the lower layer to contract. In this case, the net effect of applying the voltage is that the plate becomes more concave as viewed from below. Conversely, an applied voltage of the opposite polarity causes the plate to become less concave as viewed from below. The benders in a hinged pair are oriented with their bias curvatures concave inward, so that there is a bias distance between the attachment tabs. The two benders are connected electrically in parallel, with their connection polarities chosen so that an applied voltage of one polarity causes both benders to become more convex inward (more bent), while an applied voltage of the opposite polarity causes both benders to become less convex inward (less bent). An increase or decrease in bend is accompanied by an increase or

  19. Biased Allostery.

    PubMed

    Edelstein, Stuart J; Changeux, Jean-Pierre

    2016-09-01

    G-protein-coupled receptors (GPCRs) constitute a large group of integral membrane proteins that transduce extracellular signals from a wide range of agonists into targeted intracellular responses. Although the responses can vary depending on the category of G-proteins activated by a particular receptor, responses were also found to be triggered by interactions of the receptor with β-arrestins. It was subsequently discovered that for the same receptor molecule (e.g., the β-adrenergic receptor), some agonists have a propensity to specifically favor responses by G-proteins, others by β-arrestins, as has now been extensively studied. This feature of the GPCR system is known as biased agonism and is subject to various interpretations, including agonist-induced conformational change versus selective stabilization of preexisting active conformations. Here, we explore a complete allosteric framework for biased agonism based on alternative preexisting conformations that bind more strongly, but nonexclusively, either G-proteins or β-arrestins. The framework incorporates reciprocal effects among all interacting molecules. As a result, G-proteins and β-arrestins are in steric competition for binding to the cytoplasmic surface of either the G-protein-favoring or β-arrestin-favoring GPCR conformation. Moreover, through linkage relations, the strength of the interactions of G-proteins or β-arrestins with the corresponding active conformation potentiates the apparent affinity for the agonist, effectively equating these two proteins to allosteric modulators. The balance between response alternatives can also be influenced by the physiological concentrations of either G-proteins or β-arrestins, as well as by phosphorylation or interactions with positive or negative allosteric modulators. The nature of the interactions in the simulations presented suggests novel experimental tests to distinguish more fully among alternative mechanisms. PMID:27602718

  20. A single-phase embedded Z-source DC-AC inverter.

    PubMed

    Kim, Se-Jin; Lim, Young-Cheol

    2014-01-01

    In the conventional DC-AC inverter consisting of two DC-DC converters with unipolar output capacitors, the output capacitor voltages of the DC-DC converters must be higher than the DC input voltage. To overcome this weakness, this paper proposes a single-phase DC-AC inverter consisting of two embedded Z-source converters with bipolar output capacitors. The proposed inverter is composed of two embedded Z-source converters with a common DC source and output AC load. Though the output capacitor voltages of the converters are relatively low compared to those of a conventional inverter, an equivalent level of AC output voltages can be obtained. Moreover, by controlling the output capacitor voltages asymmetrically, the AC output voltage of the proposed inverter can be higher than the DC input voltage. To verify the validity of the proposed inverter, experiments were performed with a DC source voltage of 38 V. By controlling the output capacitor voltages of the converters symmetrically or asymmetrically, the proposed inverter can produce sinusoidal AC output voltages. The experiments show that efficiencies of up to 95% and 97% can be achieved with the proposed inverter using symmetric and asymmetric control, respectively.

  1. A Single-Phase Embedded Z-Source DC-AC Inverter

    PubMed Central

    Kim, Se-Jin; Lim, Young-Cheol

    2014-01-01

    In the conventional DC-AC inverter consisting of two DC-DC converters with unipolar output capacitors, the output capacitor voltages of the DC-DC converters must be higher than the DC input voltage. To overcome this weakness, this paper proposes a single-phase DC-AC inverter consisting of two embedded Z-source converters with bipolar output capacitors. The proposed inverter is composed of two embedded Z-source converters with a common DC source and output AC load. Though the output capacitor voltages of the converters are relatively low compared to those of a conventional inverter, an equivalent level of AC output voltages can be obtained. Moreover, by controlling the output capacitor voltages asymmetrically, the AC output voltage of the proposed inverter can be higher than the DC input voltage. To verify the validity of the proposed inverter, experiments were performed with a DC source voltage of 38 V. By controlling the output capacitor voltages of the converters symmetrically or asymmetrically, the proposed inverter can produce sinusoidal AC output voltages. The experiments show that efficiencies of up to 95% and 97% can be achieved with the proposed inverter using symmetric and asymmetric control, respectively. PMID:25133241

  2. A single-phase embedded Z-source DC-AC inverter.

    PubMed

    Kim, Se-Jin; Lim, Young-Cheol

    2014-01-01

    In the conventional DC-AC inverter consisting of two DC-DC converters with unipolar output capacitors, the output capacitor voltages of the DC-DC converters must be higher than the DC input voltage. To overcome this weakness, this paper proposes a single-phase DC-AC inverter consisting of two embedded Z-source converters with bipolar output capacitors. The proposed inverter is composed of two embedded Z-source converters with a common DC source and output AC load. Though the output capacitor voltages of the converters are relatively low compared to those of a conventional inverter, an equivalent level of AC output voltages can be obtained. Moreover, by controlling the output capacitor voltages asymmetrically, the AC output voltage of the proposed inverter can be higher than the DC input voltage. To verify the validity of the proposed inverter, experiments were performed with a DC source voltage of 38 V. By controlling the output capacitor voltages of the converters symmetrically or asymmetrically, the proposed inverter can produce sinusoidal AC output voltages. The experiments show that efficiencies of up to 95% and 97% can be achieved with the proposed inverter using symmetric and asymmetric control, respectively. PMID:25133241

  3. Response of dairy cattle to transient voltages and magnetic fields

    SciTech Connect

    Reinemann, D.J.; Laughlin, N.K.; Stetson, L.E.

    1995-07-01

    Stray voltages in dairy facilities have been studied since the 1970`s. Previous research using steady-state ac and dc voltages has defined cow-contact voltage levels which may cause behavior and associated production problems. This research was designed to address concerns over possible effects of transient voltages and magnetic fields on dairy cows. Dairy cows response to transient voltages and magnetic fields was measured. The waveforms of the transient voltages applied were: 5 cycles of 60-Hz ac with a total pulse time of 83 ms, 1 cycle of 60-Hz ac with a total pulse time of 16 ms, and 1 cycle of an ac square wave (spiking positive and negative) of 2-ms duration. Alternating magnetic fields were produced by passing 60-Hz ac fundamental frequency with 2nd and 3rd harmonic and random noise components in metal structures around the cows. The maximum magnetic field associated with this current flow was in excess of 4 G. A wide range of sensitivity to transient voltages was observed among cows. Response levels from 24 cows to each transient exposure were normally distributed. No responses to magnetic fields were observed.

  4. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  5. Toroidal-Core Microinductors Biased by Permanent Magnets

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo; Blaes, Brent

    2003-01-01

    The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current

  6. Multipeak self-biased magnetoelectric coupling characteristics in four-phase Metglas/Terfenol-D/Be-bronze/PMN-PT structure

    NASA Astrophysics Data System (ADS)

    Huang, Dongyan; Lu, Caijiang; Bing, Han

    2015-04-01

    This letter develops a self-biased magnetoelectric (ME) structure Metglas/Terfenol-D/Be-bronze/PMN-PT (MTBP) consisting of a magnetization-graded Metglas/Terfenol-D layer, a elastic Be-bronze plate, and a piezoelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) plate. By using the magnetization-graded Metglas/Terfenol-D layer and the elastic Be-bronze plate, multi-peak self-biased ME responses are obtained in MTBP structure. The experimental results show that the MTBP structure with two layers of Metglas foil has maximum zero-biased ME voltage coefficient (MEVC). As frequency increases from 0.5 to 90 kHz, eleven large peaks of MEVC with magnitudes of 0.75-33 V/(cm Oe) are observed at zero-biased magnetic field. The results demonstrate that the proposed multi-peak self-biased ME structure may be useful for multifunctional devices such as multi-frequency energy harvesters or low-frequency ac magnetic field sensors.

  7. A dry-cooled AC quantum voltmeter

    NASA Astrophysics Data System (ADS)

    Schubert, M.; Starkloff, M.; Peiselt, K.; Anders, S.; Knipper, R.; Lee, J.; Behr, R.; Palafox, L.; Böck, A. C.; Schaidhammer, L.; Fleischmann, P. M.; Meyer, H.-G.

    2016-10-01

    The paper describes a dry-cooled AC quantum voltmeter system operated up to kilohertz frequencies and 7 V rms. A 10 V programmable Josephson voltage standard (PJVS) array was installed on a pulse tube cooler (PTC) driven with a 4 kW air-cooled compressor. The operating margins at 70 GHz frequencies were investigated in detail and found to exceed 1 mA Shapiro step width. A key factor for the successful chip operation was the low on-chip power consumption of 65 mW in total. A thermal interface between PJVS chip and PTC cold stage was used to avoid a significant chip overheating. By installing the cryocooled PJVS array into an AC quantum voltmeter setup, several calibration measurements of dc standards and calibrator ac voltages up to 2 kHz frequencies were carried out to demonstrate the full functionality. The results are discussed and compared to systems with standard liquid helium cooling. For dc voltages, a direct comparison measurement between the dry-cooled AC quantum voltmeter and a liquid-helium based 10 V PJVS shows an agreement better than 1 part in 1010.

  8. Ac-dc converter firing error detection

    SciTech Connect

    Gould, O.L.

    1996-07-15

    Each of the twelve Booster Main Magnet Power Supply modules consist of two three-phase, full-wave rectifier bridges in series to provide a 560 VDC maximum output. The harmonic contents of the twelve-pulse ac-dc converter output are multiples of the 60 Hz ac power input, with a predominant 720 Hz signal greater than 14 dB in magnitude above the closest harmonic components at maximum output. The 720 Hz harmonic is typically greater than 20 dB below the 500 VDC output signal under normal operation. Extracting specific harmonics from the rectifier output signal of a 6, 12, or 24 pulse ac-dc converter allows the detection of SCR firing angle errors or complete misfires. A bandpass filter provides the input signal to a frequency-to-voltage converter. Comparing the output of the frequency-to-voltage converter to a reference voltage level provides an indication of the magnitude of the harmonics in the ac-dc converter output signal.

  9. Fabrication of alumina films with laminated structures by ac anodization

    NASA Astrophysics Data System (ADS)

    Segawa, Hiroyo; Okano, Hironaga; Wada, Kenji; Inoue, Satoru

    2014-02-01

    Anodization techniques by alternating current (ac) are introduced in this review. By using ac anodization, laminated alumina films are fabricated. Different types of alumina films consisting of 50-200 nm layers were obtained by varying both the ac power supply and the electrolyte. The total film thickness increased with an increase in the total charge transferred. The thickness of the individual layers increased with the ac voltage; however, the anodization time had little effect on the film thickness. The laminated alumina films resembled the nacre structure of shells, and the different morphologies exhibited by bivalves and spiral shells could be replicated by controlling the rate of increase of the applied potentials.

  10. Non-contact current and voltage sensor

    SciTech Connect

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  11. Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

    DOEpatents

    Gallegos-Lopez, Gabriel; Nagashima, James M.; Perisic, Milun; Hiti, Silva

    2012-02-14

    A system is provided for controlling two AC machines. The system comprises a DC input voltage source that provides a DC input voltage, a voltage boost command control module (VBCCM), a five-phase PWM inverter module coupled to the two AC machines, and a boost converter coupled to the inverter module and the DC input voltage source. The boost converter is designed to supply a new DC input voltage to the inverter module having a value that is greater than or equal to a value of the DC input voltage. The VBCCM generates a boost command signal (BCS) based on modulation indexes from the two AC machines. The BCS controls the boost converter such that the boost converter generates the new DC input voltage in response to the BCS. When the two AC machines require additional voltage that exceeds the DC input voltage required to meet a combined target mechanical power required by the two AC machines, the BCS controls the boost converter to drive the new DC input voltage generated by the boost converter to a value greater than the DC input voltage.

  12. High sensitivity zero-biased magnetic field sensor based on multiphase laminate heterostructures with FeCuNbSiB nanocrystalline soft magnetic alloy

    NASA Astrophysics Data System (ADS)

    Qiu, Jing; Wen, Yumei; Li, Ping; Chen, Hengjia

    2016-05-01

    In this paper, a high sensitivity zero-biased magnetic field sensor based on multiphase laminate heterostructures consisting of FeCuNbSiB/Terfenol-D (Tb1-xDyxFe2)/PZT (Pb(Zr1-x,Tix)O3)/Terfenol-D/PZT/Ternol-D/FeCuNbSiB (FMPMPMF) is presented, whose ME coupling characteristics and sensing performances have been investigated. Compared to traditional Terfenol-D/PZT/Terfenol-D (MPM) and Terfenol-D/PZT/Terfenol-D/PZT/Terfenol-D (MPMPM) sensors, the zero-biased ME coupling characteristics of FMPMPMF sensor were significantly improved, owing to a build-in magnetic field in FeCuNbSiB/Terfenol-D layers. The optimum zero-biased resonant ME voltage coefficient of 3.02 V/Oe is achieved, which is 1.65 times as great as that of MPMPM and 2.51 times of MPM sensors. The mean value of low-frequency ME field coefficient of FMPMPMF reaches 122.53 mV/cm Oe, which is 2.39 times as great as that of MPMPM and 1.79 times of MPM sensors. Meanwhile, the induced zero-biased ME voltage of FMPMPMF sensor shows an excellent linear relationship to ac magnetic field both at the low frequency (1 kHz) and the resonant frequency (106.6 kHz). Remarkably, it indicates that the proposed zero-biased magnetic field sensor give the prospect of being able to applied to the field of highly sensitive ac magnetic field sensing.

  13. AC Loss Measurements on a 2G YBCO Coil

    SciTech Connect

    Rey, Christopher M; Duckworth, Robert C; Schwenterly, S W

    2011-01-01

    The Oak Ridge National Laboratory (ORNL) is collaborating with Waukesha Electric Systems (WES) to continue development of HTS power transformers. For compatibility with the existing power grid, a commercially viable HTS transformer will have to operate at high voltages in the range of 138 kV and above, and will have to withstand 550-kV impulse voltages as well. Second-generation (2G) YBCO coated conductors will be required for an economically-competitive design. In order to adequately size the refrigeration system for these transformers, the ac loss of these HTS coils must be characterized. Electrical AC loss measurements were conducted on a prototype high voltage (HV) coil with co-wound stainless steel at 60 Hz in a liquid nitrogen bath using a lock-in amplifier technique. The prototype HV coil consisted of 26 continuous (without splice) single pancake coils concentrically centered on a stainless steel former. For ac loss measurement purposes, voltage tap pairs were soldered across each set of two single pancake coils so that a total of 13 separate voltage measurements could be made across the entire length of the coil. AC loss measurements were taken as a function of ac excitation current. Results show that the loss is primarily concentrated at the ends of the coil where the operating fraction of critical current is the highest and show a distinct difference in current scaling of the losses between low current and high current regimes.

  14. Low Voltage Spatial Light Modulator

    SciTech Connect

    Papavasiliou, A

    2003-02-19

    This project studied the feasibility of a Low-Voltage actuator technology that promises to reduce the switched voltage requirements and linearize the response of spatial light modulators. We created computer models that demonstrate substantial advantages offered by this technology, and fabricated and tested those devices. SLMs are electro-optic devices for modulating the phase, amplitude or angle of light beams, laser or other. Applications for arrays of SLMs include turbulence correction for high-speed optical communications, imaging through distorting media, input devices for holographic memories, optical manipulation of DNA molecules, and optical computers. Devices based on micro electro-mechanical systems (MEMS) technology have recently become of special interest because of their potential for greatly improved performance at a much lower cost than piezoelectric or liquid crystal based devices. The new MEMS-based SLM devices could have important applications in high-speed optical communication and remote optical sensing, in support of DoD and DOE missions. Virtually all previously demonstrated MEMS SLMs are based on parallel-plate capacitors where an applied voltage causes a mirror attached to a suspended electrode to move towards a fixed electrode. They require relatively high voltages, typically on the order of 100 V, resulting in (1) large transistor sizes, available only from specialized foundries at significant cost and limiting the amount/sophistication of electronics under each SLM pixel, and (2) large power dissipation/area, resulting in a heat removal issue because of the optical precision required ({approx} 1/50-th of a wavelength). The actuator described in this process uses an advanced geometry that was invented at LLNL and is currently still proprietary. The new geometry allows the application of a bias voltage. This applied bias voltage results in a reduction of the required switched voltage and a linearization of the response curve. When this

  15. Stable voltage source for Penning trap experiments.

    PubMed

    Pinegar, David B; Blaum, Klaus; Biesiadzinski, Tomasz P; Zafonte, Steven L; Van Dyck, Robert S

    2009-06-01

    A voltage reference has been developed to bias ring electrodes of two Penning traps between -90 and 0 V. For output voltages near -90 V, the Allan deviation of the system's voltage instability is less than 1 part in 10(8) over all time scales shorter than 10(4) s. For averaging times longer than several seconds, the system's stability is determined almost completely by the noise, drift, and aging of the zener diodes in the array of voltage reference integrated circuits. For shorter averaging times, active filters built into the new system significantly reduce the intrinsic noise of the zener diodes. The system makes it possible to continuously adjust the ring voltages for frequency locking the axial motion in the two Penning traps. By keeping electrical noise highly correlated between the two traps, measurement uncertainty should be reduced for precision experiments such as Penning trap mass spectrometry.

  16. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  17. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Astrophysics Data System (ADS)

    Castell, Karen D.; Ruitberg, Arthur P.

    1994-11-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  18. Bias dependent photocurrent characteristics of copper sulfide single nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Jungdong; Oh, Eunsoon; Yang, Yiming; Yu, Dong

    2016-07-01

    We studied the photocurrent characteristics of copper sulfide nanowire devices under bias voltages. Under global illumination by a laser beam on the nanowire devices, the magnitude of the photocurrent was often found to be asymmetric with respect to the bias, and in some cases, even the direction of the photocurrent remained unchanged for a bias in the opposite direction. Such an unusual bias dependence can be explained by the asymmetry of the Schottky contacts near the electrodes and by the bias dependent electric field at the contacts, as was confirmed by using scanning photocurrent microscopy.

  19. High-output microwave detector using voltage-induced ferromagnetic resonance

    SciTech Connect

    Shiota, Yoichi Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2014-11-10

    We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

  20. ACS: ALMA Common Software

    NASA Astrophysics Data System (ADS)

    Chiozzi, Gianluca; Šekoranja, Matej

    2013-02-01

    ALMA Common Software (ACS) provides a software infrastructure common to all ALMA partners and consists of a documented collection of common patterns and components which implement those patterns. The heart of ACS is based on a distributed Component-Container model, with ACS Components implemented as CORBA objects in any of the supported programming languages. ACS provides common CORBA-based services such as logging, error and alarm management, configuration database and lifecycle management. Although designed for ALMA, ACS can and is being used in other control systems and distributed software projects, since it implements proven design patterns using state of the art, reliable technology. It also allows, through the use of well-known standard constructs and components, that other team members whom are not authors of ACS easily understand the architecture of software modules, making maintenance affordable even on a very large project.

  1. Quantized states in superconducting quantum wells biased by an external field

    NASA Astrophysics Data System (ADS)

    Shafranjuk, Serhii; Ketterson, John

    2004-03-01

    The interest to quantized states in superconducting quantum wells (SQW) is stimulated by rapid development of qubit devices. The SQW may be formed in different ways. In this report we consider SQW at a minimum of the superconducting order parameter, which happens, e.g, at a normal core of an Abrikosov vortex or in SINIS junctions (S are the superconducting banks, I is an insulating barrier, N is a thin normal metal layer). The Andreev reflection (when an incident electron is reflected as a hole and vice versa) at opposite SN and NS interfaces (or on SIN and NIS interfaces, which have an intermediate transparency) creates quantized states, which are observed in experiments. The quantization condition depends on the sample purity and the quantum well size, which should be comparable to the superconducting coherence length. However, the quantization condition may also be changed when a bias field is applied across the quantum well, and the phase of the superfluid condensate wave function becomes time-dependent. If the time dependence is arbitrary, and the energy is a bad quantum number, then in accordance with a general quantum mechanical rules no quantized states could arise. However, if the behavior is time-homogeneous (e.g., under influence of a dc field, or of an ac field of constant amplitude), the energy is a good quantum number, and the quantized states may exist. In this work we consider the formation of the quantized states in the SINIS junction biased by a dc and ac voltages. The calculations are made using the boundary conditions in the quasiclassical approximation. The quantization conditions are analyzed versus the quantum well size, the electron mean free path, and the external bias field magnitude.

  2. Transistor biased amplifier minimizes diode discriminator threshold attenuation

    NASA Technical Reports Server (NTRS)

    Larsen, R. N.

    1967-01-01

    Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.

  3. Total dose performance of radiation hardened voltage regulators and references

    NASA Technical Reports Server (NTRS)

    McClure, S.; Gorelick, J.; Pease, R.; Rax, B.; Ladbury, R.

    2001-01-01

    Total dose test of commercially available radiation hardened bipolar voltage regulators and references show reduced sensitivity to dose rate and varying sensitivity to bias under pressure. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.

  4. Auto bias control and bias hold circuit for IQ-modulator in flexible optical QAM transmitter with Nyquist filtering.

    PubMed

    Kawakami, Hiroto; Kobayashi, Takayuki; Yoshida, Mitsuteru; Kataoka, Tomoyoshi; Miyamoto, Yutaka

    2014-11-17

    An Auto Bias Control (ABC) technique for the IQ-modulator of a flexible optical QAM transmitter is described. This technique can support various optical QAM signal formats with Nyquist filtering and electronic dispersion pre-compensation. 16, 32 and 64-QAM signals (21 Gbaud) are successfully generated, and all bias voltages are held to their optimum value even when signal format is changed.

  5. ac electroosmosis in rectangular microchannels.

    PubMed

    Campisi, Michele; Accoto, Dino; Dario, Paolo

    2005-11-22

    Motivated by the growing interest in ac electroosmosis as a reliable no moving parts strategy to control fluid motion in microfluidic devices for biomedical applications, such as lab-on-a-chip, we study transient and steady-state electrokinetic phenomena (electroosmosis and streaming currents) in infinitely extended rectangular charged microchannels. With the aid of Fourier series and Laplace transforms we provide a general formal solution of the problem, which is used to study the time-dependent response to sudden ac applied voltage differences in case of finite electric double layer. The Debye-Huckel approximation has been adopted to allow for an algebraic solution of the Poisson-Boltzmann problem in Fourier space. We obtain the expressions of flow velocity profiles, flow rates, streaming currents, as well as expressions of the complex hydraulic and electrokinetic conductances. We analyze in detail the dependence of the electrokinetic conductance on the extension of linear dimensions relative to the Debye length, with an eye on finite electric double layer effects. PMID:16351310

  6. Investigation of high voltage spacecraft system interactions with plasma environments

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.; Berkopec, F. D.; Purvis, C. K.; Grier, N.; Staskus, J. V.

    1978-01-01

    An experimental investigation was undertaken for insulator and conductor test surfaces biased up to + or - 1kV in a simulated low earth orbit charged particle environment. It was found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

  7. Voltage tunable dielectric properties of oxides at nanoscale: TiO2 and CeO2 as model systems

    NASA Astrophysics Data System (ADS)

    Prakash, T.; Tamil Selvan, A.; Suraiya Begum, S. N.

    2016-03-01

    Carrier transport through electrically active grain boundaries has been studied under biased condition using Solartron 1260 impedance/gain phase analyzer with an applied AC potential of 250 mV in the frequency range 1 Hz-1 MHz for nanocrystalline TiO2 and CeO2 as the model systems. Prior to the measurement both the materials were converted into cylindrical pellets with (8 mm diameter and 1 mm thick) by applying uni-axial pressure of 4 ton using a hydraulic press, then sintered at 300, 450 and 600 °C for 30 min for TiO2 sample and for the case of CeO2 it was done at 300, 600 and 900 °C for 30 min. Further, they were characterized using powder X-ray diffractometer (XRD) and transmission electron microscopy (TEM) to know the crystal structure, average crystallite size and morphology. The impedance measurements were performed at room temperature under applied DC bias voltages from 0 to 3 V in the periodic increment of 0.2 V. The observed applied bias voltage effect on dielectric constant of both the systems was analyzed with 'grain boundary double Schottky potential barrier height model' for different grain sizes. The percentage of voltage tunable dielectric constant (T%) as a function of frequency was estimated for all the grain sizes and it was found to be increase with reduction of grain size. Our experimental findings reveal the possibilities of utilizing these nanocrystals as a potential active material for phased array antenna since both the samples exhibits T% = 85% at 100 Hz frequency.

  8. AC corrosion -- A new challenge to pipeline integrity

    SciTech Connect

    Gummow, R.A.; Wakelin, R.G.; Segall, S.M.

    1998-12-31

    Corrosion of steel by alternating current was investigated as far back as the early 1900`s. These early studies and others in the 1950--60`s indicated that AC corrosion of steel was only a fraction of an equivalent amount of direct current (i.e. less than 1% of a like amount of DC) and in addition was controlled to negligible levels when cathodic protection was applied to industry standards. In 1986 however, an investigation into a corrosion failure on a high pressure gas pipeline in Germany indicated that the sole cause of the failure was AC corrosion. This corrosion failure on an otherwise well protected pipeline resulted in the initiation of several laboratory and field studies which indicated, that above a certain minimum AC current density, normal levels of cathodic protection will not control AC corrosion to acceptable levels and that AC mitigation is often required to prevent serious corrosion. Several other AC corrosion sites were discovered at coating holidays during the follow-up investigations in Germany. A graph, relating AC voltage to holiday size at the minimum AC current density for corrosion, is presented to assist the pipeline operator in determining whether or not a pipeline is susceptible to AC corrosion activity.

  9. Local Voltage Support from Distributed Energy Resources to Prevent Air Conditioner Motor Stalling

    SciTech Connect

    Baone, Chaitanya A; Xu, Yan; Kueck, John D

    2010-01-01

    Microgrid voltage collapse often happens when there is a high percentage of low inertia air-conditioning (AC) motors in the power systems. The stalling of the AC motors results in Fault Induced Delayed Voltage Recovery (FIDVR). A hybrid load model including typical building loads, AC motor loads, and other induction motor loads is built to simulate the motoring stalling phenomena. Furthermore, distributed energy resources (DE) with local voltage support capability are utilized to boost the local bus voltage during a fault, and prevent the motor stalling. The simulation results are presented. The analysis of the simulation results show that local voltage support from multiple DEs can effectively and economically solve the microgrid voltage collapse problem.

  10. Dynamical Coulomb blockade of tunnel junctions driven by alternating voltages

    NASA Astrophysics Data System (ADS)

    Grabert, Hermann

    2015-12-01

    The theory of the dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that, for standard setups where an external voltage is applied to a tunnel junction via an impedance, time-dependent driving entails an excitation of the modes of the electromagnetic environment by the applied voltage. Previous approaches for ac driven circuits need to be extended to account for the driven bath modes. A unitary transformation involving also the variables of the electromagnetic environment is introduced which allows us to split off the time dependence from the Hamiltonian in the absence of tunneling. This greatly simplifies perturbation-theoretical calculations based on treating the tunneling Hamiltonian as a perturbation. In particular, the average current flowing in the leads of the tunnel junction is studied. Explicit results are given for the case of an applied voltage with a constant dc part and a sinusoidal ac part. The connection with standard dynamical Coulomb blockade theory for constant applied voltage is established. It is shown that an alternating voltage source reveals significant additional effects caused by the electromagnetic environment. The hallmark of the dynamical Coulomb blockade in ac driven devices is a suppression of higher harmonics of the current by the electromagnetic environment. The theory presented basically applies to all tunneling devices driven by alternating voltages.

  11. Divertor bias experiments

    NASA Astrophysics Data System (ADS)

    Staebler, G. M.

    1994-06-01

    Electrical biasing of the divertor target plates has recently been implemented on several tokamaks. The results of these experiments to date will be reviewed in this paper. The bias electrode configuration is unique in each experiment. The effects of biasing on the scrape-off layer (SOL) plasma also differ. By comparing results between machines, and using theoretical models, an understanding of the basic physics of biasing begins to emerge. Divertor biasing has been demonstrated to have a strong influence on the particle and energy transport within the SOL. The ability to externally control the SOL plasma with biasing has promising applications to future tokamak reactors.

  12. Recent applications of AC electrokinetics in biomolecular analysis on microfluidic devices.

    PubMed

    Sasaki, Naoki

    2012-01-01

    AC electrokinetics is a generic term that refers to an induced motion of particles and fluids under nonuniform AC electric fields. The AC electric fields are formed by application of AC voltages to microelectrodes, which can be easily integrated into microfluidic devices by standard microfabrication techniques. Moreover, the magnitude of the motion is large enough to control the mass transfer on the devices. These advantages are attractive for biomolecular analysis on the microfluidic devices, in which the characteristics of small space and microfluidics have been mainly employed. In this review, I describe recent applications of AC electrokinetics in biomolecular analysis on microfluidic devices. The applications include fluid pumping and mixing by AC electrokinetic flow, and manipulation of biomolecules such as DNA and proteins by various AC electrokinetic techniques. Future prospects for highly functional biomolecular analysis on microfluidic devices with the aid of AC electrokinetics are also discussed.

  13. Charge Voltages from Magnetization Dynamics

    NASA Astrophysics Data System (ADS)

    Hoffmann, Axel

    2013-03-01

    The main challenge of spin caloritronics is to establish a connection between heat currents and spin currents. Towards this end, spin Hall effects have become very important, since they allow to convert a pure spin current into a transverse charge voltage. I will show how these spin Hall effects can be characterized with great accuracy using spin pumping, where the excitation of ferromagnetic resonance generates a pure spin current in an adjacent non-magnetic conductor.[3] The change in the line-width of the ferromagnetic resonance determines the spin-mixing conductance and thus after proper calibration of the rf magnetic fields and the concomitant opening angles of the magnetization precession, allows to determine the magnitude of the spin current. The charge current generated from inverse spin Hall effect is measured through the associated electrical voltage and the ration of spin and charge current directly determines the spin Hall angle. Furthermore I will present an alternative approach for converting magnetization dynamics into measurable charge voltages. Namely, the dissipation of magnetization dynamics in thin films generally also results in a temperature gradient perpendicular to the film, since the supporting substrate acts as a heat sink. This in turn can generate a transverse voltage through the anomalous Nernst effect. Interestingly this allows to detect spin waves with very good signal to noise[4] and unlike optical or inductive detection techniques there is practically no lower limit for the wavelength of the detected spin waves. Financial support was through U.S. Department of Energy, Office of Science under Contract no. DE-AC02-06CH11357.

  14. Microfabricated AC impedance sensor

    DOEpatents

    Krulevitch, Peter; Ackler, Harold D.; Becker, Frederick; Boser, Bernhard E.; Eldredge, Adam B.; Fuller, Christopher K.; Gascoyne, Peter R. C.; Hamilton, Julie K.; Swierkowski, Stefan P.; Wang, Xiao-Bo

    2002-01-01

    A microfabricated instrument for detecting and identifying cells and other particles based on alternating current (AC) impedance measurements. The microfabricated AC impedance sensor includes two critical elements: 1) a microfluidic chip, preferably of glass substrates, having at least one microchannel therein and with electrodes patterned on both substrates, and 2) electrical circuits that connect to the electrodes on the microfluidic chip and detect signals associated with particles traveling down the microchannels. These circuits enable multiple AC impedance measurements of individual particles at high throughput rates with sufficient resolution to identify different particle and cell types as appropriate for environmental detection and clinical diagnostic applications.

  15. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

    DOE PAGES

    Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

    2014-11-18

    We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states,more » while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.« less

  16. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

    SciTech Connect

    Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

    2014-11-18

    We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states, while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.

  17. System and method for determining stator winding resistance in an AC motor

    DOEpatents

    Lu, Bin; Habetler, Thomas G.; Zhang, Pinjia; Theisen, Peter J.

    2011-05-31

    A system and method for determining stator winding resistance in an AC motor is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of an AC motor. The circuit includes at least one contactor and at least one switch to control current flow and terminal voltages in the AC motor. The system also includes a controller connected to the circuit and configured to modify a switching time of the at least one switch to create a DC component in an output of the system corresponding to an input to the AC motor and determine a stator winding resistance of the AC motor based on the injected DC component of the voltage and current.

  18. Plasma interactions with biased concentrator solar cells

    NASA Astrophysics Data System (ADS)

    Stillwell, R. P.; Stevens, N. J.

    1986-12-01

    Concentrator solar arrays are being proposed for future space missions as replacements for less efficient (power/mass) planar arrays. While planar solar arrays have been used in space and their characteristics evaluated, concentrator cell interactions have not. This study investigates the possible interactions between a biased concentrator cell and a plasma environment. This study involved experimental and preliminary analytical work. It has been found that the electric fields associated with the biased cell are confined to the light collector region of the cell configuration, and that the cell arcs in dense plasma environments, at negative voltages of less than -200 volts, in a way similar to the arcing experienced by planar cells.

  19. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  20. Random telegraphic voltage noise due to thermal bi-stability in a superconducting weak link

    NASA Astrophysics Data System (ADS)

    Biswas, Sourav; Kumar, Nikhil; Winkelmann, C. B.; Courtois, Herve; Gupta, Anjan K.

    2016-05-01

    We investigated the random telegraphic voltage noise signal in the hysteretic bi-stable state of a superconducting weak link device. Fluctuation induced random switching between zero voltage state and non-zero-voltage state gives rise to a random telegraphic voltage signal in time domain. This telegraphic noise is used to find the mean lifetime of each of the two states. The mean life time in the zero voltage state is found to decrease with increasing bias current while that of resistive state increases and thus the two cross at certain bias current. We qualitatively discuss this observed switching behavior as arising from the bi-stable nature.

  1. Voltage Quench Dynamics of a Kondo System.

    PubMed

    Antipov, Andrey E; Dong, Qiaoyuan; Gull, Emanuel

    2016-01-22

    We examine the dynamics of a correlated quantum dot in the mixed valence regime. We perform numerically exact calculations of the current after a quantum quench from equilibrium by rapidly applying a bias voltage in a wide range of initial temperatures. The current exhibits short equilibration times and saturates upon the decrease of temperature at all times, indicating Kondo behavior both in the transient regime and in the steady state. The time-dependent current saturation temperature connects the equilibrium Kondo temperature to a substantially increased value at voltages outside of the linear response. These signatures are directly observable by experiments in the time domain. PMID:26849606

  2. Variable-frequency inverter controls torque, speed, and braking in ac induction motors

    NASA Technical Reports Server (NTRS)

    Nola, F. J.

    1974-01-01

    Dc to ac inverter provides optimum frequency and voltage to ac induction motor, in response to different motor-load and speed requirements. Inverter varies slip frequency of motor in proportion to required torque. Inverter protects motor from high current surges, controls negative slip to apply braking, and returns energy stored in momentum of load to dc power source.

  3. Demonstrating the Correspondence Bias

    ERIC Educational Resources Information Center

    Howell, Jennifer L.; Shepperd, James A.

    2011-01-01

    Among the best-known and most robust biases in person perception is the correspondence bias--the tendency for people to make dispositional, rather than situational, attributions for an actor's behavior. The correspondence bias appears in virtually every social psychology textbook and in many introductory psychology textbooks, yet the authors'…

  4. Bias in Grading

    ERIC Educational Resources Information Center

    Malouff, John

    2008-01-01

    Bias in grading can be conscious or unconscious. The author describes different types of bias, such as those based on student attractiveness or performance in prior courses, and a variety of methods of reducing bias, including keeping students anonymous during grading and using detailed criteria for subjective grading.

  5. High-power ac/dc variable load simulator

    NASA Technical Reports Server (NTRS)

    Joncas, K. P.; Birnbach, S.; Bruce, L. D.; Smith, L.

    1975-01-01

    Design of medium-power dynamic electrical load simulator has been extended to permit simulation of ac as well as dc loads and to provide for operation at higher power levels. Simulator is internally protected against reverse voltage, overvoltage, overcurrent, and overload conditions.

  6. Batteries: Widening voltage windows

    NASA Astrophysics Data System (ADS)

    Xu, Kang; Wang, Chunsheng

    2016-10-01

    The energy output of aqueous batteries is largely limited by the narrow voltage window of their electrolytes. Now, a hydrate melt consisting of lithium salts is shown to expand such voltage windows, leading to a high-energy aqueous battery.

  7. AC magnetohydrodynamic microfluidic switch

    SciTech Connect

    Lemoff, A V; Lee, A P

    2000-03-02

    A microfluidic switch has been demonstrated using an AC Magnetohydrodynamic (MHD) pumping mechanism in which the Lorentz force is used to pump an electrolytic solution. By integrating two AC MHD pumps into different arms of a Y-shaped fluidic circuit, flow can be switched between the two arms. This type of switch can be used to produce complex fluidic routing, which may have multiple applications in {micro}TAS.

  8. Automatic voltage imbalance detector

    DOEpatents

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  9. The EP-4(0) shielding kits: a new approach to protection from induced voltage

    SciTech Connect

    Vorob'ev, A. Yu.; Otmorskii, S. G.; Smekalov, V. V.; Gorozhankina, E. N.; Sosunov, N. N.; Bol'shunov, A. M.

    2011-09-15

    Problems of safety in work on overhead power lines and the overhead railroad ac contact network under induced voltages are considered. The use of additional individual protection systems is proposed to provide protection from electric shock during such work.

  10. Fluid simulation of the bias effect in inductive/capacitive discharges

    SciTech Connect

    Zhang, Yu-Ru; Gao, Fei; Li, Xue-Chun; Wang, You-Nian; Bogaerts, Annemie

    2015-11-15

    Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.

  11. AC power generation from microbial fuel cells

    NASA Astrophysics Data System (ADS)

    Lobo, Fernanda Leite; Wang, Heming; Forrestal, Casey; Ren, Zhiyong Jason

    2015-11-01

    Microbial fuel cells (MFCs) directly convert biodegradable substrates to electricity and carry good potential for energy-positive wastewater treatment. However, the low and direct current (DC) output from MFC is not usable for general electronics except small sensors, yet commercial DC-AC converters or inverters used in solar systems cannot be directly applied to MFCs. This study presents a new DC-AC converter system for MFCs that can generate alternating voltage in any desired frequency. Results show that AC power can be easily achieved in three different frequencies tested (1, 10, 60 Hz), and no energy storage layer such as capacitors was needed. The DC-AC converter efficiency was higher than 95% when powered by either individual MFCs or simple MFC stacks. Total harmonic distortion (THD) was used to investigate the quality of the energy, and it showed that the energy could be directly usable for linear electronic loads. This study shows that through electrical conversion MFCs can be potentially used in household electronics for decentralized off-grid communities.

  12. Isolation of sequences flanking Ac insertion sites by Ac casting.

    PubMed

    Wang, Dafang; Peterson, Thomas

    2013-01-01

    Localizing Ac insertions is a fundamental task in studying Ac-induced mutation and chromosomal rearrangements involving Ac elements. Researchers may sometimes be faced with the situation in which the sequence flanking one side of an Ac/Ds element is known, but the other flank is unknown. Or, a researcher may have a small sequence surrounding the Ac/Ds insertion site and needs to obtain additional flanking genomic sequences. One way to rapidly clone unknown Ac/Ds flanking sequences is via a PCR-based method termed Ac casting. This approach utilizes the somatic transposition activity of Ac during plant development, and provides an efficient means for short-range genome walking. Here we describe the principle of Ac casting, and show how it can be applied to isolate Ac macrotransposon insertion sites.

  13. Queries for Bias Testing

    NASA Technical Reports Server (NTRS)

    Gordon, Diana F.

    1992-01-01

    Selecting a good bias prior to concept learning can be difficult. Therefore, dynamic bias adjustment is becoming increasingly popular. Current dynamic bias adjustment systems, however, are limited in their ability to identify erroneous assumptions about the relationship between the bias and the target concept. Without proper diagnosis, it is difficult to identify and then remedy faulty assumptions. We have developed an approach that makes these assumptions explicit, actively tests them with queries to an oracle, and adjusts the bias based on the test results.

  14. Biasing a ferronematic - a new way to detect weak magnetic field.

    PubMed

    Tomašovičová, Natália; Kováč, Jozef; Raikher, Yuriy; Éber, Nándor; Tóth-Katona, Tibor; Gdovinová, Veronika; Jadżyn, Jan; Pinčák, Richard; Kopčanský, Peter

    2016-06-29

    The magnetic properties of a ferronematic, i.e., a nematic liquid crystal doped with magnetic nanoparticles in low volume concentration are studied, with the focus on the ac magnetic susceptibility. A weak dc bias magnetic field (a few Oe) applied to the ferronematic in its isotropic phase increases the ac magnetic susceptibility considerably. Passage of the isotropic-to-nematic phase transition resets this enhancement irreversibly (unless the dc bias field is applied again in the isotropic phase). PMID:27296792

  15. AC plasma anemometer—characteristics and design

    NASA Astrophysics Data System (ADS)

    Marshall, Curtis; Matlis, Eric; Corke, Thomas; Gogineni, Sivaram

    2015-08-01

    The characteristics and design of a high-bandwidth flow sensor that uses an AC glow discharge (plasma) as the sensing element is presented. The plasma forms in the air gap between two protruding low profile electrodes attached to a probe body. The output from the anemometer is an amplitude modulated version of the AC voltage input that contains information about the mean and fluctuating velocity components. The anemometer circuitry includes resistance and capacitance elements that simulate a dielectric-barrier to maintain a diffuse plasma, and a constant-current feedback control that maintains operation within the desired glow discharge regime over an extended range of air velocities. Mean velocity calibrations are demonstrated over a range from 0 to 140 m s-1. Over this velocity range, the mean output voltage varied linearly with air velocity, providing a constant static sensitivity. The effect of the electrode gap and input AC carrier frequency on the anemometer static sensitivity and dynamic response are investigated. Experiments are performed to compare measurements obtained with a plasma sensor operating at two AC carrier frequencies against that of a constant-temperature hot-wire. All three sensors were calibrated against the same known velocity reference. An uncertainty based on the standard deviation of the velocity calibration fit was applied to the mean and fluctuating velocity measurements of the three sensors. The motivation is not to replace hot-wires as a general measurement tool, but rather as an alternative to hot-wires in harsh environments or at high Mach numbers where they either have difficulty in surviving or lack the necessary frequency response.

  16. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  17. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  18. Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

  19. Tracking MOV operability under degraded voltage condition by periodic test measurements

    SciTech Connect

    Hussain, B.; Behera, A.K.; Alsammarae, A.J.

    1996-12-31

    The purpose of this paper is to develop a methodology for evaluating the operability of Alternating Current (AC) Motor Operated Valve (MOV) under degraded voltage condition, based on the seating parameter measured during surveillance/testing. This approach will help resolve Nuclear Regulatory Commission`s (NRC`s) concern on verifying the AC MOV`s design basis capability through periodic testing.

  20. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    SciTech Connect

    Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

    2015-08-15

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  1. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    SciTech Connect

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  2. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    DOE PAGES

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to bothmore » crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  3. Tevatron AC dipole system

    SciTech Connect

    Miyamoto, R.; Kopp, S.E.; Jansson, A.; Syphers, M.J.; /Fermilab

    2007-06-01

    The AC dipole is an oscillating dipole magnet which can induce large amplitude oscillations without the emittance growth and decoherence. These properties make it a good tool to measure optics of a hadron synchrotron. The vertical AC dipole for the Tevatron is powered by an inexpensive high power audio amplifier since its operating frequency is approximately 20 kHz. The magnet is incorporated into a parallel resonant system to maximize the current. The use of a vertical pinger magnet which has been installed in the Tevatron made the cost relatively inexpensive. Recently, the initial system was upgraded with a more powerful amplifier and oscillation amplitudes up to 2-3{sigma} were achieved with the 980 GeV proton beam. This paper discusses details of the Tevatron AC dipole system and also shows its test results.

  4. AC-3 audio coder

    NASA Astrophysics Data System (ADS)

    Todd, Craig

    1995-12-01

    AC-3 is a system for coding up to 5.1 channels of audio into a low bit-rate data stream. High quality may be obtained with compression ratios approaching 12-1 for multichannel audio programs. The high compression ratio is achieved by methods which do not increase decoder memory, and thus cost. The methods employed include: the transmission of a high frequency resolution spectral envelope; and a novel forward/backward adaptive bit allocation algorithm. In order to satisfy practical requirements of an emissions coder, the AC-3 syntax includes a number of features useful to broadcasters and consumers. These features include: loudness uniformity between programs; dynamic range control; and broadcaster control of downmix coefficients. The AC-3 coder has been formally selected for inclusion of the U.S. HDTV broadcast standard, and has been informally selected for several additional applications.

  5. Voltage control of cavity magnon polariton

    NASA Astrophysics Data System (ADS)

    Kaur, S.; Yao, B. M.; Rao, J. W.; Gui, Y. S.; Hu, C.-M.

    2016-07-01

    We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

  6. Microwave integrated circuit for Josephson voltage standards

    NASA Technical Reports Server (NTRS)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  7. Interpretation biases in paranoia.

    PubMed

    Savulich, George; Freeman, Daniel; Shergill, Sukhi; Yiend, Jenny

    2015-01-01

    Information in the environment is frequently ambiguous in meaning. Emotional ambiguity, such as the stare of a stranger, or the scream of a child, encompasses possible good or bad emotional consequences. Those with elevated vulnerability to affective disorders tend to interpret such material more negatively than those without, a phenomenon known as "negative interpretation bias." In this study we examined the relationship between vulnerability to psychosis, measured by trait paranoia, and interpretation bias. One set of material permitted broadly positive/negative (valenced) interpretations, while another allowed more or less paranoid interpretations, allowing us to also investigate the content specificity of interpretation biases associated with paranoia. Regression analyses (n=70) revealed that trait paranoia, trait anxiety, and cognitive inflexibility predicted paranoid interpretation bias, whereas trait anxiety and cognitive inflexibility predicted negative interpretation bias. In a group comparison those with high levels of trait paranoia were negatively biased in their interpretations of ambiguous information relative to those with low trait paranoia, and this effect was most pronounced for material directly related to paranoid concerns. Together these data suggest that a negative interpretation bias occurs in those with elevated vulnerability to paranoia, and that this bias may be strongest for material matching paranoid beliefs. We conclude that content-specific biases may be important in the cause and maintenance of paranoid symptoms.

  8. Integrated Bypass Battery for ReverseBias Protection

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A,

    2002-01-01

    When a single solar cell of a series-connect string is placed in shadow, the entire array current is forced through that cell in reverse bias. Reverse bias current can lead to "hot-spot" heating, where the power produced by the unshadowed cells is dissipated as heat in the shadowed cell. Since occasional shadows are unavoidable in most applications, most solar arrays include shadow protection to prevent damage. In current practice, shadow protection is done with a "bypass diode" on each cell, to shunt the reverse bias current if a cell is shadowed. A new method of reverse bias protection is to use an Integral thin-film battery to provide voltage in the case of a shadowed cell. In this case, the shadowed cell continues to provide voltage during the transient shadow.

  9. Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

    NASA Astrophysics Data System (ADS)

    Wu, Guang-Guo; Li, Hong-Ri; Liang, Kun; Yang, Ru; Cao, Xue-Lei; Wang, Huan-Yu; An, Jun-Ming; Hu, Xiong-Wei; Han, De-Jun

    2009-04-01

    Anode Boating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm2 fabricated by a double-side parallel technology. It is demonstrated that the anode Boating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode Boating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (-50 V) of the SDD. Theoretical analysis and experimental results show that the anode Boating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p+ inner ring and the n+ anode. A fast checking method before detector encapsulation is proposed by employing the anode Boating voltage along with checking the leakage current, potential distribution and drift properties.

  10. Optical voltage reference

    DOEpatents

    Rankin, R.; Kotter, D.

    1994-04-26

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  11. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    SciTech Connect

    Wu, Tian-Li Groeseneken, Guido; Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Bakeroot, Benoit; Roelofs, Robin

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  12. Investigation of high voltage spacecraft system interactions with plasma environments

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.; Berkopec, F. D.; Purvis, C. K.; Grier, N.; Staskus, J.

    1978-01-01

    The exposure of high voltage spacecraft systems to the charged particle environment of space can produce interactions that will influence system operation. An experimental investigation of these interactions has been undertaken for insulator and conductor test surfaces biased up to plus or minus 1 kV in a simulated low earth orbit charged particle environment. It has been found that these interactions are controlled by the insulator surfaces surrounding the biased conductors. For positive applied voltages the electron current collection can be enhanced by the insulators. For negative applied voltages the insulator surface confines the voltage to the conductor region; this can cause arcing. Understanding these interactions and the technology to control their impact on system operation is essential to the design of solar cell arrays for ion drive propulsion applications that use direct drive power processing.

  13. Electrostatic turbulence intermittence driven by biasing in Texas Helimak

    SciTech Connect

    Toufen, D. L.; Pereira, F. A. C.; Guimarães-Filho, Z. O.; Caldas, I. L.; Gentle, K. W.

    2014-12-15

    We investigate changes in the intermittent sequence of bursts in the electrostatic turbulence due to imposed positive bias voltage applied to control the plasma radial electric field in Texas Helimak [K. W. Gentle and H. He, Plasma Sci. Technol. 10, 284 (2008)]—a toroidal plasma device with a one-dimensional equilibrium, magnetic curvature, and shear. We identify the burst characteristics by analyzing ion saturation current fluctuations collected in a large set of Langmuir probes. The number of bursts increase with positive biasing, giving rise to a long tailed skewed turbulence probability distribution function. The burst shape does not change much with the applied bias voltage, while their vertical velocity increases monotonically. For high values of bias voltage, the bursts propagate mainly in the vertical direction which is perpendicular to the radial density gradient and the toroidal magnetic field. Moreover, in contrast with the bursts in tokamaks, the burst velocity agrees with the phase velocity of the overall turbulence in both vertical and radial directions. For a fixed bias voltage, the time interval between bursts and their amplitudes follows exponential distributions. Altogether, these burst characteristics indicate that their production can be modelled by a stochastic process.

  14. AC/RF Superconductivity

    SciTech Connect

    Ciovati, Gianluigi

    2015-02-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  15. Power conditioning for low-voltage piezoelectric stack energy harvesters

    NASA Astrophysics Data System (ADS)

    Skow, E.; Leadenham, S.; Cunefare, K. A.; Erturk, A.

    2016-04-01

    Low-power vibration and acoustic energy harvesting scenarios typically require a storage component to be charged to enable wireless sensor networks, which necessitates power conditioning of the AC output. Piezoelectric beam-type bending mode energy harvesters or other devices that operate using a piezoelectric element at resonance produce high voltage levels, for which AC-DC converters and step-down DC-DC converters have been previously investigated. However, for piezoelectric stack energy harvesters operating off-resonance and producing low voltage outputs, a step-up circuit is required for power conditioning, such as seen in electromagnetic vibration energy scavengers, RF communications, and MEMS harvesters. This paper theoretically and experimentally investigates power conditioning of a low-voltage piezoelectric stack energy harvester.

  16. High-voltage compatible, full-depleted CCD

    DOEpatents

    Holland, Stephen Edward

    2007-09-18

    A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.

  17. ac electroosmotic pumping induced by noncontact external electrodes.

    PubMed

    Wang, Shau-Chun; Chen, Hsiao-Ping; Chang, Hsueh-Chia

    2007-01-01

    Electroosmotic (EO) pumps based on dc electroosmosis is plagued by bubble generation and other electrochemical reactions at the electrodes at voltages beyond 1 V for electrolytes. These disadvantages limit their throughput and offset their portability advantage over mechanical syringe or pneumatic pumps. ac electroosmotic pumps at high frequency (>100 kHz) circumvent the bubble problem by inducing polarization and slip velocity on embedded electrodes,1 but they require complex electrode designs to produce a net flow. We report a new high-throughput ac EO pump design based on induced-polarization on the entire channel surface instead of just on the electrodes. Like dc EO pumps, our pump electrodes are outside of the load section and form a cm-long pump unit consisting of three circular reservoirs (3 mm in diameter) connected by a 1x1 mm channel. The field-induced polarization can produce an effective Zeta potential exceeding 1 V and an ac slip velocity estimated as 1 mmsec or higher, both one order of magnitude higher than earlier dc and ac pumps, giving rise to a maximum throughput of 1 mulsec. Polarization over the entire channel surface, quadratic scaling with respect to the field and high voltage at high frequency without electrode bubble generation are the reasons why the current pump is superior to earlier dc and ac EO pumps. PMID:19693362

  18. Political bias is tenacious.

    PubMed

    Ditto, Peter H; Wojcik, Sean P; Chen, Eric Evan; Grady, Rebecca Hofstein; Ringel, Megan M

    2015-01-01

    Duarte et al. are right to worry about political bias in social psychology but they underestimate the ease of correcting it. Both liberals and conservatives show partisan bias that often worsens with cognitive sophistication. More non-liberals in social psychology is unlikely to speed our convergence upon the truth, although it may broaden the questions we ask and the data we collect.

  19. Investigating Test Bias.

    ERIC Educational Resources Information Center

    Hoepfner, Ralph; Strickland, Guy P.

    This study investigates the question of test bias to develop an index of the appropriateness of a test to a particular socioeconomic or racial-ethnic group. Bias is defined as an item by race interaction in an analysis-of-variance design. The sample of 172 third graders at two integrated schools in a large California school district, included 26…

  20. Sampler bias -- Phase 1

    SciTech Connect

    Blanchard, R.J.

    1995-03-07

    This documents Phase 1 determinations on sampler induced bias for four sampler types used in tank characterization. Each sampler, grab sampler or bottle-on-a-string, auger sampler, sludge sampler and universal sampler, is briefly discussed and their physical limits noted. Phase 2 of this document will define additional testing and analysis to further define Sampler Bias.

  1. Interplay between electron overheating and ac Josephson effect

    NASA Astrophysics Data System (ADS)

    De Cecco, A.; Le Calvez, K.; Sacépé, B.; Winkelmann, C. B.; Courtois, H.

    2016-05-01

    We study the response of high-critical-current proximity Josephson junctions to a microwave excitation. Electron overheating in such devices is known to create hysteretic dc voltage-current characteristics. Here we demonstrate that it also strongly influences the ac response. The interplay of electron overheating and ac Josephson dynamics is revealed by the evolution of the Shapiro steps with the microwave drive amplitude. Extending the resistively shunted Josephson junction model by including a thermal balance for the electronic bath coupled to phonons, a strong electron overheating is obtained.

  2. Electric voltage generation by antiferromagnetic dynamics

    NASA Astrophysics Data System (ADS)

    Yamane, Yuta; Ieda, Jun'ichi; Sinova, Jairo

    2016-05-01

    We theoretically demonstrate dc and ac electric voltage generation due to spin motive forces originating from domain wall motion and magnetic resonance, respectively, in two-sublattice antiferromagnets. Our theory accounts for the canting between the sublattice magnetizations, the nonadiabatic electron spin dynamics, and the Rashba spin-orbit coupling, with the intersublattice electron dynamics treated as a perturbation. This work suggests a way to observe and explore the dynamics of antiferromagnetic textures by electrical means, an important aspect in the emerging field of antiferromagnetic spintronics, where both manipulation and detection of antiferromagnets are needed.

  3. Failure Modes during Low-Voltage Electrowetting.

    PubMed

    Mibus, Marcel; Hu, Xiaoyu; Knospe, Carl; Reed, Michael L; Zangari, Giovanni

    2016-06-22

    Low-voltage electrowetting devices allow significant contact angle changes below a 50 V bias; however, operation under prolonged cycling and failure modes have not yet been sufficiently elucidated. In this work, the failure modes and performance degradation of Cytop (23-210 nm)/aluminum oxide (15-44 nm) bilayers have been investigated. Contact angle and leakage current were measured during stepped voltage measurements up to failure, showing three electrowetting response regimes: ideal Young-Lippmann behavior, contact angle saturation, and dielectric breakdown. The onset of ionic conduction in aluminum oxide and the resulting breakdown control when the layer would ultimately fail, but the thickness of the Cytop layer determined the achievable contact angle versus voltage characteristics. Cyclic electrowetting measurements studied the repeatability of contact angle change using an applied voltage above or below the voltage drop needed for polymer breakdown (VT). Results show repeatable electrowetting below VT and a rapidly diminishing contact angle response above VT. The leakage current and injected charge cannot be used to comprehensively assess the stability of the system during operation. The contact potential difference measured with a Kelvin probe provides an alternative means of assessing the extent of the damage. PMID:27253515

  4. Voltage verification unit

    DOEpatents

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  5. Local Dynamic Reactive Power for Correction of System Voltage Problems

    SciTech Connect

    Kueck, John D; Rizy, D Tom; Li, Fangxing; Xu, Yan; Li, Huijuan; Adhikari, Sarina; Irminger, Philip

    2008-12-01

    Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results

  6. Derivation of Instantaneous Wye and Zero-Phase Sequence Voltages from Line-Line Voltages in Unbalanced 3-Phase 3-Wire Systems and Application of This Method to 3-Phase PWM Converter Control

    NASA Astrophysics Data System (ADS)

    Yuzurihara, Itsuo; Kawamura, Atsuo

    In general, voltage imbalances in 3-phase AC power systems are inevitable. 3-Phase PWM (Pulse Width Modulation) converter used in 3-wire systems are generally designed for use under limited imbalances of input voltages, and problems such as input current distortion, deterioration of output properties, degradation of efficiency and failure may occur in some cases. These problems cause severe damages to industries in some cases, for example, semiconductor production machines: SEMI defined “SEMI F47-0200” and “SEMI F47-0706” standards that have to be satisfied to realize voltage sag immunity. In order to compensate the remained problems due to the unbalanced input voltages, particular storage devices are designed additionally for conventional converters. This paper proposes that the determination of both the instantaneous zero-phase sequence voltage and wye voltages is essential for 3-phase PWM converter control used for a 3-wire system to keep its output rated under occasional or long-term voltage imbalances in an AC system. This paper also describes a general new method to derive the components of the voltages of instantaneous wye and zero-phase sequence voltage from line-line voltages of a 3-wire system. This paper also describes a method to apply the voltages to control the converter. The results obtained on implementation verify that this new converter keeps its output rated under unbalanced conditions wider than those defined by SEMIs without particular storage devices as far as the AC voltages are remained live.

  7. AC power systems handbook

    SciTech Connect

    Whitaker, J.

    1991-01-01

    Transient disturbances are what headaches are made of. Whatever you call them-spikes, surges, are power bumps-they can take your equipment down and leave you with a complicated and expensive repair job. Protection against transient disturbances is a science that demands attention to detail. This book explains how the power distribution system works, what can go wrong with it, and how to protect a facility against abnormalities. system grounding and shielding are covered in detail. Each major method of transient protection is analyzed and its relative merits discussed. The book provides a complete look at the critical elements of the ac power system. Provides a complete look at the ac power system from generation to consumption. Discusses the mechanisms that produce transient disturbances and how to protect against them. Presents diagrams to facilitate system design. Covers new areas, such as the extent of the transient disturbance problem, transient protection options, and stand-by power systems.

  8. Biased predecision processing.

    PubMed

    Brownstein, Aaron L

    2003-07-01

    Decision makers conduct biased predecision processing when they restructure their mental representation of the decision environment to favor one alternative before making their choice. The question of whether biased predecision processing occurs has been controversial since L. Festinger (1957) maintained that it does not occur. The author reviews relevant research in sections on theories of cognitive dissonance, decision conflict, choice certainty, action control, action phases, dominance structuring, differentiation and consolidation, constructive processing, motivated reasoning, and groupthink. Some studies did not find evidence of biased predecision processing, but many did. In the Discussion section, the moderators are summarized and used to assess the theories. PMID:12848220

  9. Increased Ac excision (iae): Arabidopsis thaliana mutations affecting Ac transposition.

    PubMed

    Jarvis, P; Belzile, F; Page, T; Dean, C

    1997-05-01

    The maize transposable element Ac is highly active in the heterologous hosts tobacco and tomato, but shows very much reduced levels of activity in Arabidopsis. A mutagenesis experiment was undertaken with the aim of identifying Arabidopsis host factors responsible for the observed low levels of Ac activity. Seed from a line carrying a single copy of the Ac element inserted into the streptomycin phosphotransferase (SPT) reporter fusion, and which displayed typically low levels of Ac activity, were mutagenized using gamma rays. Nineteen mutants displaying high levels of somatic Ac activity, as judged by their highly variegated phenotypes, were isolated after screening the M2 generation on streptomycin-containing medium. The mutations fall into two complementation groups, iae1 and iae2, are unlinked to the SPT::Ac locus and segregate in a Mendelian fashion. The iae1 mutation is recessive and the iae2 mutation is semi-dominant. The iae1 and iae2 mutants show 550- and 70-fold increases, respectively, in the average number of Ac excision sectors per cotyledon. The IAE1 locus maps to chromosome 2, whereas the SPT::Ac reporter maps to chromosome 3. A molecular study of Ac activity in the iae1 mutant confirmed the very high levels of Ac excision predicted using the phenotypic assay, but revealed only low levels of Ac re-insertion. Analyses of germinal transposition in the iae1 mutant demonstrated an average germinal excision frequency of 3% and a frequency of independent Ac re-insertions following germinal excision of 22%. The iae mutants represents a possible means of improving the efficiency of Ac/Ds transposon tagging systems in Arabidopsis, and will enable the dissection of host involvement in Ac transposition and the mechanisms employed for controlling transposable element activity.

  10. Microfluidic flow-focusing in ac electric fields.

    PubMed

    Tan, Say Hwa; Semin, Benoît; Baret, Jean-Christophe

    2014-03-21

    We demonstrate the control of droplet sizes by an ac voltage applied across microelectrodes patterned around a flow-focusing junction. The electrodes do not come in contact with the fluids to avoid electrochemical effects. We found several regimes of droplet production in electric fields, controlled by the connection of the chip, the conductivity of the dispersed phase and the frequency of the applied field. A simple electrical modelling of the chip reveals that the effective voltage at the tip of the liquid to be dispersed controls the production mechanism. At low voltages (≲ 600 V), droplets are produced in dripping regime; the droplet size is a function of the ac electric field. The introduction of an effective capillary number that takes into account the Maxwell stress can explain the dependance of droplet size with the applied voltage. At higher voltages (≳ 600 V), jets are observed. The stability of droplet production is a function of the fluid conductivity and applied field frequency reported in a set of flow diagrams. PMID:24401868

  11. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  12. Equivalent Electrical Circuit Representations of AC Quantized Hall Resistance Standards

    PubMed Central

    Cage, M. E.; Jeffery, A.; Matthews, J.

    1999-01-01

    We use equivalent electrical circuits to analyze the effects of large parasitic impedances existing in all sample probes on four-terminal-pair measurements of the ac quantized Hall resistance RH. The circuit components include the externally measurable parasitic capacitances, inductances, lead resistances, and leakage resistances of ac quantized Hall resistance standards, as well as components that represent the electrical characteristics of the quantum Hall effect device (QHE). Two kinds of electrical circuit connections to the QHE are described and considered: single-series “offset” and quadruple-series. (We eliminated other connections in earlier analyses because they did not provide the desired accuracy with all sample probe leads attached at the device.) Exact, but complicated, algebraic equations are derived for the currents and measured quantized Hall voltages for these two circuits. Only the quadruple-series connection circuit meets our desired goal of measuring RH for both ac and dc currents with a one-standard-deviation uncertainty of 10−8 RH or less during the same cool-down with all leads attached at the device. The single-series “offset” connection circuit meets our other desired goal of also measuring the longitudinal resistance Rx for both ac and dc currents during that same cool-down. We will use these predictions to apply small measurable corrections, and uncertainties of the corrections, to ac measurements of RH in order to realize an intrinsic ac quantized Hall resistance standard of 10−8 RH uncertainty or less.

  13. Introduction to Unconscious Bias

    NASA Astrophysics Data System (ADS)

    Schmelz, Joan T.

    2010-05-01

    We all have biases, and we are (for the most part) unaware of them. In general, men and women BOTH unconsciously devalue the contributions of women. This can have a detrimental effect on grant proposals, job applications, and performance reviews. Sociology is way ahead of astronomy in these studies. When evaluating identical application packages, male and female University psychology professors preferred 2:1 to hire "Brian” over "Karen” as an assistant professor. When evaluating a more experienced record (at the point of promotion to tenure), reservations were expressed four times more often when the name was female. This unconscious bias has a repeated negative effect on Karen's career. This talk will introduce the concept of unconscious bias and also give recommendations on how to address it using an example for a faculty search committee. The process of eliminating unconscious bias begins with awareness, then moves to policy and practice, and ends with accountability.

  14. Estimating Bias Error Distributions

    NASA Technical Reports Server (NTRS)

    Liu, Tian-Shu; Finley, Tom D.

    2001-01-01

    This paper formulates the general methodology for estimating the bias error distribution of a device in a measuring domain from less accurate measurements when a minimal number of standard values (typically two values) are available. A new perspective is that the bias error distribution can be found as a solution of an intrinsic functional equation in a domain. Based on this theory, the scaling- and translation-based methods for determining the bias error distribution arc developed. These methods are virtually applicable to any device as long as the bias error distribution of the device can be sufficiently described by a power series (a polynomial) or a Fourier series in a domain. These methods have been validated through computational simulations and laboratory calibration experiments for a number of different devices.

  15. Photocurrent-voltage relation of resonant tunneling diode photodetectors

    NASA Astrophysics Data System (ADS)

    Pfenning, Andreas; Hartmann, Fabian; Rebello Sousa Dias, Mariama; Langer, Fabian; Kamp, Martin; Castelano, Leonardo Kleber; Lopez-Richard, Victor; Marques, Gilmar Eugenio; Höfling, Sven; Worschech, Lukas

    2015-08-01

    We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV (V ) of the current-voltage curve, which depends strongly on the bias voltage V . A model is proposed describing ΔV (V ) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V ) , the lifetime of photogenerated and accumulated charge carriers τ(V ) , and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.

  16. Political bias is tenacious.

    PubMed

    Ditto, Peter H; Wojcik, Sean P; Chen, Eric Evan; Grady, Rebecca Hofstein; Ringel, Megan M

    2015-01-01

    Duarte et al. are right to worry about political bias in social psychology but they underestimate the ease of correcting it. Both liberals and conservatives show partisan bias that often worsens with cognitive sophistication. More non-liberals in social psychology is unlikely to speed our convergence upon the truth, although it may broaden the questions we ask and the data we collect. PMID:26786070

  17. Reverse bias protected solar array with integrated bypass battery

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A (Inventor)

    2012-01-01

    A method for protecting the photovoltaic cells in a photovoltaic (PV) array from reverse bias damage by utilizing a rechargeable battery for bypassing current from a shaded photovoltaic cell or group of cells, avoiding the need for a bypass diode. Further, the method mitigates the voltage degradation of a PV array caused by shaded cells.

  18. Three-phase ac-to-ac series-resonant power converter with a reduced number of thyristors

    SciTech Connect

    Klaassens, J.B.; de Beer, F. )

    1991-07-01

    This paper reports that ac-ac series-resonant converters have been proven to be functional and useful. Power pulse modulation with internal frequencies of tens of kHz and suited for multikilowatt power levels is applied to a series-resonant converter system for generating synthesized multiphase bipolar waveforms with reversible power flow and flow distortion. The use of a series-resonant circuit for power transfer and control obtains natural current commutation of the thyristors and the prevention of excessive stresses on components. Switches are required which have bidirectional current conduction and voltage blocking ability. The conventional series-resonant ac-ac converter applies a total for 24 anti-parallel thyristors. An alternative circuit configuration for the series-resonant ac-ac converter with only 12 thyristors is also presented. The alternative power circuit has three neutrals, related to the polyphase source, the load and the converter, which may be interconnected. If they are connected, the high-frequency component of the source and load currents will flow through the connection between the neutrals. The test results of a converter system generating three-phase sinusoidal input and output waveforms have demonstrated the significant aspects of this type of power interfaces.

  19. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  20. Imaging voltage in neurons

    PubMed Central

    Peterka, Darcy S.; Takahashi, Hiroto; Yuste, Rafael

    2011-01-01

    In the last decades, imaging membrane potential has become a fruitful approach to study neural circuits, especially in invertebrate preparations with large, resilient neurons. At the same time, particularly in mammalian preparations, voltage imaging methods suffer from poor signal to noise and secondary side effects, and they fall short of providing single-cell resolution when imaging of the activity of neuronal populations. As an introduction to these techniques, we briefly review different voltage imaging methods (including organic fluorophores, SHG chromophores, genetic indicators, hybrid, nanoparticles and intrinsic approaches), and illustrate some of their applications to neuronal biophysics and mammalian circuit analysis. We discuss their mechanisms of voltage sensitivity, from reorientation, electrochromic or electro-optical phenomena, to interaction among chromophores or membrane scattering, and highlight their advantages and shortcomings, commenting on the outlook for development of novel voltage imaging methods. PMID:21220095

  1. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  2. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  3. A cascaded three-phase symmetrical multistage voltage multiplier

    NASA Astrophysics Data System (ADS)

    Iqbal, Shahid; Singh, G. K.; Besar, R.; Muhammad, G.

    2006-10-01

    A cascaded three-phase symmetrical multistage Cockcroft-Walton voltage multiplier (CW-VM) is proposed in this report. It consists of three single-phase symmetrical voltage multipliers, which are connected in series at their smoothing columns like string of batteries and are driven by three-phase ac power source. The smoothing column of each voltage multiplier is charged twice every cycle independently by respective oscillating columns and discharged in series through load. The charging discharging process completes six times a cycle and therefore the output voltage ripple's frequency is of sixth order of the drive signal frequency. Thus the proposed approach eliminates the first five harmonic components of load generated voltage ripples and sixth harmonic is the major ripple component. The proposed cascaded three-phase symmetrical voltage multiplier has less than half the voltage ripple, and three times larger output voltage and output power than the conventional single-phase symmetrical CW-VM. Experimental and simulation results of the laboratory prototype are given to show the feasibility of proposed cascaded three-phase symmetrical CW-VM.

  4. A calculable, transportable audio-frequency AC reference standard

    SciTech Connect

    Oldham, N.M.; Hetrick, P.S. ); Zeng, X. )

    1989-04-01

    A transportable ac voltage source is described, in which sinusoidal signals are synthesized digitally in the audio-frequency range. The rms value of the output waveform may be calculated by measuring the dc level of the individual steps used to generate the waveform. The uncertainty of this calculation at the 7-V level is typically less than +-5 ppm from 60 Hz to 2 kHz and less than +-10 ppm from 30 Hz to 15 kHz.

  5. Growth of oxide exchange bias layers

    DOEpatents

    Chaiken, A.; Michel, R.P.

    1998-07-21

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

  6. Review of biased solar arraay. Plasma interaction studies

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.

    1981-01-01

    The Solar Electric Propulsion System (SEPS) is proposed for a variety of space missions. Power for operating SEPS is obtained from large solar array wings capable of generating tens of kilowatts of power. To minimize resistive losses in the solar array bus lines, the array is designed to operate at voltages up to 400 volts. This use of high voltage can increase interactions between the biased solar cell interconnects and plasma environments. With thrusters operating, the system ground is maintained at space plasma potential which exposes large areas of the arrays at the operating voltages. This can increase interactions with both the natural and enhanced charged particle environments. Available data on interactions between biased solar array surfaces and plasma environments are summarized. The apparent relationship between collection phenomena and solar cell size and effects of array size on interactions are discussed. The impact of these interactions on SEPS performance is presented.

  7. Time varying voltage combustion control and diagnostics sensor

    DOEpatents

    Chorpening, Benjamin T.; Thornton, Jimmy D.; Huckaby, E. David; Fincham, William

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  8. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  9. Multilevel cascade voltage source inverter with separate DC sources

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-06-24

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  10. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    2002-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  11. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  12. Suspension of Blood Droplets in an AC Quadrupole at Atmospheric Pressure

    NASA Astrophysics Data System (ADS)

    Zhang, J. J.; Khan, A. A.; Wong, A. Y.

    1997-11-01

    Red blood cells are negatively charged electrically to facilitate smooth flow of blood in the mammalian systems. Negative charge helps avoid clumping due to aggregation of cells. Traditionally the charge on the red blood surface has been determined by microelectrophoresis. These measurements are imprecise due to difficulty in determination of many of the constants in Helmholtz-Smoluchowski equation. The charge to mass ratio of human red blood cells can be determined in a quadrupole with more certainty. The mass of the red blood cells was determined by size. Mean corpuscular hemoglobin along with other indices was also determined. The numbers of red and white blood cells were counted by a Coulter counter and microscopy. The blood droplets were injected through a 50 micron orifice into a linear AC quadrupole (Z0 = 6 mm) with a dielectric repeller on axis, driven at 3.69 KV, 60 Hz. The red blood cells separated from whole blood by centrifugation and suspended in a phosphate buffer solution were trapped in the quadrupole. The size of the droplets was determined microscopically to be in between 50-100 microns. We were able to suspend the droplets upto 25 minutes. As the q/m increases due to evaporation of some of the buffer the droplets become unstable and untrapped. We biased the quadrupole with a DC voltage such that top two pole were positive and bottom two negative. By applying the DC voltage we were able to lift the blood droplets showing that the blood droplets were negatively charged. Experiments are in progress to determine an exact number of elementary charges on each red blood cell separated from whole blood.

  13. Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

    SciTech Connect

    Park, June-Young; Park, Byong-Guk; Baek, Seung-heon Chris; Park, Seung-Young; Jo, Younghun

    2015-11-02

    We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced at a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.

  14. Power Electronic Transformer based Three-Phase PWM AC Drives

    NASA Astrophysics Data System (ADS)

    Basu, Kaushik

    A Transformer is used to provide galvanic isolation and to connect systems at different voltage levels. It is one of the largest and most expensive component in most of the high voltage and high power systems. Its size is inversely proportional to the operating frequency. The central idea behind a power electronic transformer (PET) also known as solid state transformer is to reduce the size of the transformer by increasing the frequency. Power electronic converters are used to change the frequency of operation. Steady reduction in the cost of the semiconductor switches and the advent of advanced magnetic materials with very low loss density and high saturation flux density implies economic viability and feasibility of a design with high power density. Application of PET is in generation of power from renewable energy sources, especially wind and solar. Other important application include grid tied inverters, UPS e.t.c. In this thesis non-resonant, single stage, bi-directional PET is considered. The main objective of this converter is to generate adjustable speed and magnitude pulse width modulated (PWM) ac waveforms from an ac or dc grid with a high frequency ac link. The windings of a high frequency transformer contains leakage inductance. Any switching transition of the power electronic converter connecting the inductive load and the transformer requires commutation of leakage energy. Commutation by passive means results in power loss, decrease in the frequency of operation, distortion in the output voltage waveform, reduction in reliability and power density. In this work a source based partially loss-less commutation of leakage energy has been proposed. This technique also results in partial soft-switching. A series of converters with novel PWM strategies have been proposed to minimize the frequency of leakage inductance commutation. These PETs achieve most of the important features of modern PWM ac drives including 1) Input power factor correction, 2) Common

  15. Simulation of an ac electro-osmotic pump with step microelectrodes

    NASA Astrophysics Data System (ADS)

    Kim, Byoung Jae; Lee, Seung-Hyun; Rezazadeh, Soghra; Sung, Hyung Jin

    2011-05-01

    Pumps with step microelectrodes subjected to an ac voltage are known to have faster pumping rates than those with planar asymmetric microelectrodes. The driving force for pumping in these systems is ac electro-osmosis. This paper aims to understand the flow behaviors of pumps with step microelectrodes by using a realistic model applicable to high external voltages. This model takes the steric effect due to the finite sizes of ions into account and copes with the exponential sensitivity of the counterion concentration to voltage. The effects on the pumping flow rate of varying the pump parameters were investigated. The geometrical parameters were optimized, and the effects of varying the ac frequency and amplitude were examined. The electrical potential of the fluid and the electrical charge at the electrode surface were solved simultaneously, and the Stokes equation was used to describe the fluid flow.

  16. Non-oxidized porous silicon-based power AC switch peripheries

    PubMed Central

    2012-01-01

    We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries. PMID:23057856

  17. Changes in behavioral responses of Lygus lineolaris (Hemiptera: Miridae) from various applied signal voltages during EPG recordings

    Technology Transfer Automated Retrieval System (TEKTRAN)

    A 3rd-generation AC-DC electrical penetration graph (EPG) monitor was used to study feeding behaviors of pre-reproductive adult Lygus lineolaris (Hemiptera: Miridae) on pinhead (<3mm) cotton squares, applying different signal voltages at several input impedances. The AC-DC monitor allows a user to s...

  18. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  19. Device for monitoring cell voltage

    DOEpatents

    Doepke, Matthias; Eisermann, Henning

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  20. Biasing and fast degaussing circuit for magnetic materials

    DOEpatents

    Dress, Jr., William B.; McNeilly, David R.

    1984-01-01

    A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a d.c. current and alternately apply a selectively damped a.c. current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

  1. Biasing and fast degaussing circuit for magnetic materials

    DOEpatents

    Dress, W.B. Jr.; McNeilly, D.R.

    1983-10-04

    A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a dc current and alternately apply a selectively damped ac current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

  2. A new bias scheme for a low power consumption ReRAM crossbar array

    NASA Astrophysics Data System (ADS)

    Sun, Wookyung; Choi, Sujin; Shin, Hyungsoon

    2016-08-01

    This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app/12 and 7 × V app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.

  3. STABILITY OF HIGH VOLTAGE MODULATORS FOR NONLINEAR LOADS

    SciTech Connect

    PAWLEY,J.C; TOOKER,J; PEAVY,J; CARY,W.P; NEREM,A; HOYT,D; LOHR,J

    2003-10-01

    OAK-B135 Gyrotrons have a nonlinear voltage--current characteristic such that the small signal or ac impedance changes as operational voltage and currents are reached. The ac impedance determines the stability of a voltage or current control system. this can become particularly challenging when several gyrotron are connected in parallel to a single modulator. With all gyrotrons hooked to a common ground, large current loops can be generated as well as non-canceling currents in individual coaxial lines. These inequalities can provide the required feedback impulse to start an oscillation condition in the power system for the tubes. Recent operation of two CPI 110 GHz gyrotrons in the MN class from a single modulator on DIII-D has shown instability in the power system. An oscillation in the drive current occurs at various points in the ramp up and flat top portions of the 80 kV voltage pulse with each tube drawing 40 A at full voltage. Efforts to stabilize these instabilities are presented along with some modeling and examination of the issues for gyrotron modulators.

  4. Chaos and catastrophe near the plasma frequency in the rf-biased Josephson junction

    SciTech Connect

    Kautz, R.L.; Monaco, R.

    1989-03-01

    At bias frequencies much higher than the plasma frequency, the zero-voltage state of the rf-biased Josephson junction is known to span a range of dc bias proportional to the zero-order Bessel function of the rf amplitude. This pattern is modified at frequencies near the plasma frequency by the onset of chaotic instabilities and by the presence of cusp catastrophes.

  5. Pulse-Width Control in Ladder Structure Four-Phase Rectifier for AC-Electromotive

    NASA Astrophysics Data System (ADS)

    Ivanov, V. V.; Myatez, S. V.; Langeman, E. G.; Schurov, N. I.

    2016-04-01

    Based on these studies the ways of power factor of the single-phase rectifiers operating in a single-phase AC network improving are suggested. The ladder four-phase rectifier is offered as a technical mean using a pulse-width method of controlling the rectified voltage. The pulse-width control efficiency as a way of the power factor rectifier with a ladder structure for AC electromotive improving is evaluated.

  6. Identification of /sup 233/Ac

    SciTech Connect

    Chu, Y.Y.; Zhou, M.L.

    1983-09-01

    We report in this paper identification of the new isotope /sup 233/Ac. Uranium targets were irradiated with 28 GeV protons; after rapid retrieval of the target and separation of actinium from thorium, /sup 233/Ac was allowed to decay into the known /sup 233/Th daughter. Exhaustive chemical purification was employed to permit the identification of /sup 233/Th via its characteristic ..gamma.. radiations. The half-life derived for /sup 233/Ac from several experiments is 2.3 +- 0.3 min. The production cross section for /sup 233/Ac is 100 ..mu..b.

  7. Fuzzy efficiency optimization of AC induction motors

    NASA Technical Reports Server (NTRS)

    Jani, Yashvant; Sousa, Gilberto; Turner, Wayne; Spiegel, Ron; Chappell, Jeff

    1993-01-01

    This paper describes the early states of work to implement a fuzzy logic controller to optimize the efficiency of AC induction motor/adjustable speed drive (ASD) systems running at less than optimal speed and torque conditions. In this paper, the process by which the membership functions of the controller were tuned is discussed and a controller which operates on frequency as well as voltage is proposed. The membership functions for this dual-variable controller are sketched. Additional topics include an approach for fuzzy logic to motor current control which can be used with vector-controlled drives. Incorporation of a fuzzy controller as an application-specific integrated circuit (ASIC) microchip is planned.

  8. Halo velocity bias

    NASA Astrophysics Data System (ADS)

    Biagetti, Matteo; Desjacques, Vincent; Kehagias, Alex; Riotto, Antonio

    2014-11-01

    It has been recently shown that any halo velocity bias present in the initial conditions does not decay to unity, in agreement with predictions from peak theory. However, this is at odds with the standard formalism based on the coupled-fluids approximation for the coevolution of dark matter and halos. Starting from conservation laws in phase space, we discuss why the fluid momentum conservation equation for the biased tracers needs to be modified in accordance with the change advocated in Baldauf et al. Our findings indicate that a correct description of the halo properties should properly take into account peak constraints when starting from the Vlasov-Boltzmann equation.

  9. Contamination effects on fixed-bias Langmuir probes

    SciTech Connect

    Steigies, C. T.; Barjatya, A.

    2012-11-15

    Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region.

  10. Contamination effects on fixed-bias Langmuir probes.

    PubMed

    Steigies, C T; Barjatya, A

    2012-11-01

    Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region.

  11. Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

    PubMed Central

    Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

    2013-01-01

    High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields. PMID:23760520

  12. HVDC-AC system interaction from AC harmonics. Volume 1. Harmonic impedance calculations. Final report

    SciTech Connect

    Breuer, G D; Chow, J H; Lindh, C B; Miller, N W; Numrich, F H; Price, W W; Turner, A E; Whitney, R R

    1982-09-01

    Improved methods are needed to characterize ac system harmonic behavior for ac filter design for HVDC systems. The purpose of this General Electric Company RP1138 research is to evaluate the present filter design practice and to investigate methods for calculating system harmonic impedances. An overview of ac filter design for HVDC systems and a survey of literature related to filter design have been performed. Two methods for calculating system harmonic impedances have been investigated. In the measurement method, an instrumentation system for measuring system voltage and current has been assembled. Different schemes of using the measurements to calculate system harmonic impedances have been studied. In the analytical method, a procedure to include various operating conditions has been proposed. Computer programs for both methods have been prepared, and the results of the measurement and analytical methods analyzed. A conclusion of the project is that the measurement and analytical methods both provided reasonable results. There are correlations between the measured and analytical results for most harmonics, although there are discrepancies between the assumptions used in the two methods. A sensitivity approach has been proposed to further correlate the results. From the results of the analysis, it is recommended that both methods should be tested further. For the measurement method, more testing should be done to cover different system operating conditions. In the analytical method, more detailed models for representing system components should be studied. In addition, alternative statistical and sensitivity approaches should be attempted.

  13. Voltage controlled current source

    DOEpatents

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  14. Electron launching voltage monitor

    DOEpatents

    Mendel, Clifford W.; Savage, Mark E.

    1992-01-01

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors.

  15. Electron launching voltage monitor

    DOEpatents

    Mendel, C.W.; Savage, M.E.

    1992-03-17

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

  16. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  17. Characterization and snubbing of a bidirectional MCT in a resonant ac link converter

    NASA Technical Reports Server (NTRS)

    Lee, Tony; Elbuluk, Malik E.; Zinger, Donald S.

    1993-01-01

    The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.

  18. Voltage Regulators for Photovoltaic Systems

    NASA Technical Reports Server (NTRS)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  19. Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors.

    PubMed

    Feng, Wei; Zheng, Wei; Chen, XiaoShuang; Liu, Guangbo; Hu, PingAn

    2015-12-01

    We report a modulation of threshold voltage instability of back-gated multilayer InSe FETs by gate bias stress. The performance stability of multilayer InSe FETs is affected by gate bias polar, gate bias stress time and gate bias sweep rate under ambient conditions. The on-current increases and threshold voltage shifts to negative gate bias stress direction with negative bias stress applied, which are opposite to that of positive bias stress. The intensity of gate bias stress effect is influenced by applied gate bias time and the sweep rate of gate bias stress. The behavior can be explained by the surface charge trapping model due to the adsorbing/desorbing oxygen and/or water molecules on the InSe surface. This study offers an opportunity to understand gate bias stress modulation of performance instability of back-gated multilayer InSe FETs and provides a clue for designing desirable InSe nanoelectronic and optoelectronic devices.

  20. New zero voltage switching DC converter with flying capacitors

    NASA Astrophysics Data System (ADS)

    Lin, Bor-Ren; Shiau, Tung-Yuan

    2016-04-01

    A new soft switching converter is presented for medium power applications. Two full-bridge converters are connected in series at high voltage side in order to limit the voltage stress of power switches at Vin/2. Therefore, power metal-oxide-semiconductor field-effect transistors (MOSFETs) with 600 V voltage rating can be adopted for 1200 V input voltage applications. In order to balance two input split capacitor voltages in every switching cycle, two flying capacitors are connected on the AC side of two full-bridge converters. Phase-shift pulse-width modulation (PS-PWM) is adopted to regulate the output voltage. Based on the resonant behaviour by the output capacitance of MOSFETs and the resonant inductance, active MOSFETs can be turned on under zero voltage switching (ZVS) during the transition interval. Thus, the switching losses of power MOSFETs are reduced. Two full-bridge converters are used in the proposed circuit to share load current and reduce the current stress of passive and active components. The circuit analysis and design example of the prototype circuit are provided in detail and the performance of the proposed converter is verified by the experiments.

  1. AC Electroosmotic Pumping in Nanofluidic Funnels.

    PubMed

    Kneller, Andrew R; Haywood, Daniel G; Jacobson, Stephen C

    2016-06-21

    We report efficient pumping of fluids through nanofluidic funnels when a symmetric AC waveform is applied. The asymmetric geometry of the nanofluidic funnel induces not only ion current rectification but also electroosmotic flow rectification. In the base-to-tip direction, the funnel exhibits a lower ion conductance and a higher electroosmotic flow velocity, whereas, in the tip-to-base direction, the funnel has a higher ion conductance and a lower electroosmotic flow velocity. Consequently, symmetric AC waveforms easily pump fluid through the nanofunnels over a range of frequencies, e.g., 5 Hz to 5 kHz. In our experiments, the nanofunnels were milled into glass substrates with a focused ion beam (FIB) instrument, and the funnel design had a constant 5° taper with aspect ratios (funnel tip width to funnel depth) of 0.1 to 1.0. We tracked ion current rectification by current-voltage (I-V) response and electroosmotic flow rectification by transport of a zwitterionic fluorescent probe. Rectification of ion current and electroosmotic flow increased with increasing electric field applied to the nanofunnel. Our results support three-dimensional simulations of ion transport and electroosmotic transport through nanofunnels, which suggest the asymmetric electroosmotic transport stems from an induced pressure at the junction of the nanochannel and nanofunnel tip. PMID:27230495

  2. Cooling Floor AC Systems

    NASA Astrophysics Data System (ADS)

    Jun, Lu; Hao, Ding; Hong, Zhang; Ce, Gao Dian

    The present HVAC equipments for the residential buildings in the Hot-summer-and-Cold-winter climate region are still at a high energy consuming level. So that the high efficiency HVAC system is an urgently need for achieving the preset government energy saving goal. With its advantage of highly sanitary, highly comfortable and uniform of temperature field, the hot-water resource floor radiation heating system has been widely accepted. This paper has put forward a new way in air-conditioning, which combines the fresh-air supply unit and such floor radiation system for the dehumidification and cooling in summer or heating in winter. By analyze its advantages and limitations, we found that this so called Cooling/ Heating Floor AC System can improve the IAQ of residential building while keep high efficiency quality. We also recommend a methodology for the HVAC system designing, which will ensure the reduction of energy cost of users.

  3. Own Variety Bias

    PubMed Central

    García, Andrea Ariza

    2015-01-01

    In a language identification task, native Belgian French and native Swiss French speakers identified French from France as their own variety. However, Canadian French was not subject to this bias. Canadian and French listeners didn’t claim a different variety as their own.

  4. Biased to Learn Language

    ERIC Educational Resources Information Center

    Sebastian-Galles, Nuria

    2007-01-01

    Some recent publications that explore the foundations of early language development are reviewed in this article. The review adopts the pivotal idea that infants' advancements are helped by the existence of different types of biases. The infant's discovery of the phonological properties of the language of the environment, as well as their learning…

  5. Optically biased laser gyro

    SciTech Connect

    Anderson, D.Z.; Chow, W.W.; Scully, M.O.; Sanders, V.E.

    1980-10-01

    We describe a four-mode ring laser that exhibits none of the mode-locking characteristics that plague laser gyros. This laser is characterized by a bias that changes sign with a change in the direction of rotation and prevents the counterpropagating modes from locking. A theoretical analysis explaining the experimental results is outlined.

  6. Own Variety Bias.

    PubMed

    Sloos, Marjoleine; García, Andrea Ariza

    2015-10-01

    In a language identification task, native Belgian French and native Swiss French speakers identified French from France as their own variety. However, Canadian French was not subject to this bias. Canadian and French listeners didn't claim a different variety as their own. PMID:27648211

  7. Transport ac losses of a second-generation HTS tape with a ferromagnetic substrate and conducting stabilizer

    NASA Astrophysics Data System (ADS)

    Li, Shuo; Chen, Du-Xing; Fang, Jin

    2015-12-01

    The current-voltage curve and transport ac loss of a second-generation HTS tape with a ferromagnetic NiW substrate and brass stabilizer are measured. It is found that the ac loss is up to two orders of magnitude larger than what is expected by the power-law E(J) determined by the current-voltage curve and increases with increasing frequency. Modeling results show that the overly large ac loss is contributed by the ac loss in the HTS strip enhanced by the NiW substrate and the magnetic hysteresis loss in the substrate, and the frequency-dependent loss occurs in the brass layer covering the substrate but not in the ferromagnetic substrate itself as assumed previously. The ac loss in the brass layer is associated with transport currents but not eddy currents, and it has some features similar to ordinary eddy-current loss with significant differences.

  8. Simulation analysis of three-phase current type AC-to-DC converter with high power factor

    SciTech Connect

    Okui, Yoshiaki; Yamada, Hajime

    1997-03-01

    A new three-phase current type AC-to-DC converter has been developed by the authors. This paper describes the principle of the circuit operation and the circuit configuration of the AC-to-DC converter controlled by PWM. Simulation analysis of each waveform, such as AC and DC voltages and currents, are calculated by Euler`s method. The simulated values of the total power factor agreed with the measured values within the difference of 5.8% on the condition of full load, 10kW. When the AC side voltage is unbalanced, it is found by simulation that the total harmonic distortion controlled by both feedforward control and AC side current feedback control (proportion gain, k{sub 4} = 1) is restrained at only 38% compared with only feedforward control (k{sub 4} = 0).

  9. Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report

    SciTech Connect

    Frank Hoffmann, PhD; Aspinall, Rik

    2012-12-10

    Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

  10. Module Nine: Relationships of Current, Counter EMF, and Voltage in LR Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The student will study the ways that inductance affects voltage and current in Direct Current (DC) and Alternating Current (AC) circuits and why and how inductors cause these actions. The module is divided into six lessons: rise and decay of current and voltage, LR (inductive-resistive) time constant, using the universal TC (time constant) chart,…

  11. Droplet condensation on superhydrophobic surfaces with enhanced dewetting under a tangential AC electric field

    NASA Astrophysics Data System (ADS)

    Yan, Xinzhu; Li, Jian; Li, Licheng; Huang, Zhengyong; Wang, Feipeng; Wei, Yuan

    2016-10-01

    In this Letter, the dewetting behavior of superhydrophobic condensing surfaces under a tangential AC electric field is reported. The surface coverage of condensed droplets only exhibits a negligible increase with time. The jumping frequency of droplets is enhanced. The AC electric field motivates the dynamic transition of droplets from stretch to recoil, resulting in the counterforce propelling droplet jumping. The considerable horizontal component of jumping velocity facilitates droplet departure from superhydrophobic surfaces. Both the amplitude and frequency of AC voltage are important factors for droplet departure and dewetting effect. Thereby, the tangential electric field provides a unique and easily implementable approach to enhance droplet removal from superhydrophobic condensing surfaces.

  12. Modeling of the Plasma Electrode Bias in the Negative Ion Sources with 1D PIC Method

    SciTech Connect

    Matsushita, D.; Kuppel, S.; Hatayama, A.; Fukano, A.; Bacal, M.

    2009-03-12

    The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H{sup -} ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H{sup -} ion density is discussed.

  13. Voltage-Controlled Oscillator

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Integrated Component Systems, Inc. incorporated information from a NASA Tech Briefs article into a voltage-controlled oscillator it designed for a customer. The company then applied the technology to its series of phase-locked loop synthesizers, which offer superior phase noise performance.

  14. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  15. Geomagnetism and Induced Voltage

    ERIC Educational Resources Information Center

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it is…

  16. Measuring Breakdown Voltage.

    ERIC Educational Resources Information Center

    Auer, Herbert J.

    1978-01-01

    The article discusses an aspect of conductivity, one of the electrical properties subdivisions, and describes a tester that can be shop-built. Breakdown voltage of an insulation material is specifically examined. Test procedures, parts lists, diagrams, and test data form are included. (MF)

  17. Resonant tunneling in small current-biased Josephson Junctions

    SciTech Connect

    Schmidt, J.M.

    1994-05-01

    Effects of resonant tunneling between bound quantum states of a current-biased Josephson tunnel junction is studied both theoretically and experimentally. Several effects are predicted to arise from resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and enhanced rate of escape from zero voltage state to voltage state at particular values of bias current. A model is developed to estimate magnitude and duration of voltage peaks, and to estimate enhancement of the escape rate, which appears as peaks in the rate as a function of bias current. An experimental investigation was carried out in an attempt to observe these predicted peaks in the escape rate distribution in a current-biased DC SQUID, which is shown to be dynamically equivalent to a Josephson junction with adjustable critical current. Electrical contact to each SQUID (fabricated from aluminium) was made through high resistance thin film leads located on the substrate. These resistors provided a high impedance at the plasma frequency which is for the isolation of the SQUID from its electromagnetic environment. Measurements were carried out on a dilution refrigerator at temperatures as low as 19 mK. No evidence was found for resonant tunneling; this is attributed to effective temperatures of hundreds of millikelvin. The behavior is well explained by a heating model where the high effective temperatures are generated by ohmic heating of the electron gas of the isolation resistors, which decouples from the phonon system (hot electron effect). The prospects for further theoretical and experimental research are discussed.

  18. PASP, a high voltage array/plasma interaction experiment. [Photovoltaic Array Space Power

    NASA Technical Reports Server (NTRS)

    Burger, Dale R.

    1991-01-01

    The author discusses the photovoltaic array space power (PASP) experiment, which is designed to obtain data on the interaction between high-voltage photovoltaic arrays and the polar, low-earth plasma environment. Up to six small test arrays (three each of planar and concentrator designs) can be voltage biased over a range of +/- 500 V. During the bias voltage sequence, the array current leakage is measured and array arc events are monitored. If any arcing occurs the arc characteristics will be measured by a transient pulse monitor. An emitter is included to allow voltage bias to be applied to a plasma-charged or uncharged spacecraft. Similarly, the frames of the concentrator arrays can be left floating or can be tied to the negative array terminal. An environmental data scan is made before each bias voltage sequence. This scan collects information on the plasma, array-current-versus-voltage curves, and neutral particle partial pressure. The requirement for high voltages created problems which were met by circuit isolation and logical fault protection.

  19. Emissive limiter bias experiment for improved confinement of tokamaks

    SciTech Connect

    Choe, W.; Ono, M.; Darrow, D.S.; Pribyl, P.A.; Liberati, J.R.; Taylor, R.J.

    1992-10-01

    Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB{sub 6} biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V{sub bias} {le} 50 V and I{sub inj} {ge} 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A.

  20. Temperature trend biases

    NASA Astrophysics Data System (ADS)

    Venema, Victor; Lindau, Ralf

    2016-04-01

    In an accompanying talk we show that well-homogenized national dataset warm more than temperatures from global collections averaged over the region of common coverage. In this poster we want to present auxiliary work about possible biases in the raw observations and on how well relative statistical homogenization can remove trend biases. There are several possible causes of cooling biases, which have not been studied much. Siting could be an important factor. Urban stations tend to move away from the centre to better locations. Many stations started inside of urban areas and are nowadays more outside. Even for villages the temperature difference between the centre and edge can be 0.5°C. When a city station moves to an airport, which often happened around WWII, this takes the station (largely) out of the urban heat island. During the 20th century the Stevenson screen was established as the dominant thermometer screen. This screen protected the thermometer much better against radiation than earlier designs. Deficits of earlier measurement methods have artificially warmed the temperatures in the 19th century. Newer studies suggest we may have underestimated the size of this bias. Currently we are in a transition to Automatic Weather Stations. The net global effect of this transition is not clear at this moment. Irrigation on average decreases the 2m-temperature by about 1 degree centigrade. At the same time, irrigation has increased significantly during the last century. People preferentially live in irrigated areas and weather stations serve agriculture. Thus it is possible that there is a higher likelihood that weather stations are erected in irrigated areas than elsewhere. In this case irrigation could lead to a spurious cooling trend. In the Parallel Observations Science Team of the International Surface Temperature Initiative (ISTI-POST) we are studying influence of the introduction of Stevenson screens and Automatic Weather Stations using parallel measurements

  1. A Perpendicular Biased 2nd Harmonic Cavity for the Fermilab Booster

    SciTech Connect

    Tan, C. Y.; Dey, J.; Madrak, R. L.; Pellico, W.; Romanov, G.; Sun, D.; Terechkine, I.

    2015-07-13

    A perpendicular biased 2nd harmonic cavity is currently being designed for the Fermilab Booster. Its purpose cavity is to flatten the bucket at injection and thus change the longitudinal beam distribution so that space charge effects are decreased. It can also with transition crossing. The reason for the choice of perpendicular biasing over parallel biasing is that the Q of the cavity is much higher and thus allows the accelerating voltage to be a factor of two higher than a similar parallel biased cavity. This cavity will also provide a higher accelerating voltage per meter than the present folded transmission line cavity. However, this type of cavity presents technical challenges that need to be addressed. The two major issues are cooling of the garnet material from the effects of the RF and the cavity itself from eddy current heating because of the 15 Hz bias field ramp. This paper will address the technical challenge of preventing the garnet from overheating.

  2. ACS CCD Stability Monitor

    NASA Astrophysics Data System (ADS)

    Grogin, Norman

    2012-10-01

    A moderately crowded stellar field in the cluster 47 Tuc {6 arcmin West of the cluster core} is observed every four months with the WFC. The first visit exercises the full suite of broad and narrow band imaging filters and sub-array modes; following visits observe with only the six most popular Cycle 18 filters in full-frame mode. The positions and magnitudes of objects will be used to monitor local and large scale variations in the plate scale and the sensitivity of the detectors and to derive an independent measure of the detector CTE. One exposure in each sub-array mode with the WFC will allow us to verify that photometry obtained in full-frame and in sub-array modes are repeatable to better than 1%. This test is important for the ACS Photometric Cross-Calibration program, which uses sub-array exposures. This program may receive additional orbits to investigate ORIENT-dependent geometric distortion, which motivates the ORIENT and BETWEEN requirement on the first visit.

  3. The high-bias stability of monatomic chains

    NASA Astrophysics Data System (ADS)

    Smit, R. H. M.; Untiedt, C.; van Ruitenbeek, J. M.

    2004-07-01

    For the metals Au, Pt and Ir it is possible to form freely suspended monatomic chains between bulk electrodes. The atomic chains sustain very large current densities, but finally fail at high bias. We investigate the breaking mechanism, that involves current-induced heating of the atomic wires and electromigration forces. We find good agreement of the observations for Au based on models due to Todorov and co-workers. The high-bias breaking of atomic chains for Pt can also be described by the models, although here the parameters have not been obtained independently. In the limit of long chains the breaking voltage decreases inversely proportional to the length.

  4. Switchable voltage control of the magnetic coercive field via magnetoelectric effect

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Ma, Jing; Li, Zheng; Shen, Yang; Lin, Yuanhua; Nan, C. W.

    2011-08-01

    Switchable voltage modulation of the magnetic properties is reported in different multiferroic bilayers with magnetic films grown on pre-poled ferroelectric substrates, based on the magneto-optical Kerr effect observations. The dynamic voltage control of the magnetic coercive field (Hc) is dependent not only on the materials properties of each ferroic layer, but also on the bias voltage history. The Hc versus electric field behaviors essentially track the dependence of the piezostrains of the substrates on the bias voltage. The observations demonstrate that Hc in such multiferroic bilayers can be controlled by voltage via strain-mediated magnetoelectric coupling and that the Hc change is not an artifact due to a heating effect.

  5. A low voltage ``railgun''

    NASA Astrophysics Data System (ADS)

    Starr, Stanley O.; Youngquist, Robert C.; Cox, Robert B.

    2013-01-01

    Due to recent advances in solid-state switches and ultra-capacitors, it is now possible to construct a "railgun" that can operate at voltages below 20 V. Railguns typically operate above a thousand volts, generating huge currents for a few milliseconds to provide thousands of g's of acceleration to a small projectile. The low voltage railgun described herein operates for much longer time periods (tenths of seconds to seconds), has far smaller acceleration and speed, but can potentially propel a much larger object. The impetus for this development is to lay the groundwork for a possible ground-based supersonic launch track, but the resulting system may also have applications as a simple linear motor. The system would also be a useful teaching tool, requiring concepts from electrodynamics, mechanics, and electronics for its understanding, and is relatively straightforward to construct.

  6. Numerical and theoretical evaluations of AC losses for single and infinite numbers of superconductor strips with direct and alternating transport currents in external AC magnetic field

    NASA Astrophysics Data System (ADS)

    Kajikawa, K.; Funaki, K.; Shikimachi, K.; Hirano, N.; Nagaya, S.

    2010-11-01

    AC losses in a superconductor strip are numerically evaluated by means of a finite element method formulated with a current vector potential. The expressions of AC losses in an infinite slab that corresponds to a simple model of infinitely stacked strips are also derived theoretically. It is assumed that the voltage-current characteristics of the superconductors are represented by Bean’s critical state model. The typical operation pattern of a Superconducting Magnetic Energy Storage (SMES) coil with direct and alternating transport currents in an external AC magnetic field is taken into account as the electromagnetic environment for both the single strip and the infinite slab. By using the obtained results of AC losses, the influences of the transport currents on the total losses are discussed quantitatively.

  7. Increased voltage photovoltaic cell

    NASA Technical Reports Server (NTRS)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  8. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  9. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  10. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  11. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  12. High Voltage Connector

    SciTech Connect

    Kurita, C.H.; /Fermilab

    1987-03-06

    The originally designed high voltage connectors were to be made of brass. However, if treated like a Bellevile spring with the initially given dimensions, the stresses of the connector when crimped were calculated to be much higher than the yield stress of brass. Since the flange and outer diameters of the connector are to remain small, it was necessary to alter the other dimensions and choice of material in order to bring down the stresses applied to the connector.

  13. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  14. AC photovoltaic module magnetic fields

    SciTech Connect

    Jennings, C.; Chang, G.J.; Reyes, A.B.; Whitaker, C.M.

    1997-12-31

    Implementation of alternating current (AC) photovoltaic (PV) modules, particularly for distributed applications such as PV rooftops and facades, may be slowed by public concern about electric and magnetic fields (EMF). This paper documents magnetic field measurements on an AC PV module, complementing EMF research on direct-current PV modules conducted by PG and E in 1993. Although not comprehensive, the PV EMF data indicate that 60 Hz magnetic fields (the EMF type of greatest public concern) from PV modules are comparable to, or significantly less than, those from household appliances. Given the present EMF research knowledge, AC PV module EMF may not merit considerable concern.

  15. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  16. Improving thrust by pulse-induced breakdown enhancement in AC surface dielectric barrier discharge actuators for airflow control

    NASA Astrophysics Data System (ADS)

    Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

    2016-07-01

    The characteristics of a plate-to-plate AC surface dielectric barrier discharge (SDBD) actuator using the pulse-induced breakdown enhancing method are experimentally investigated. The encapsulated electrode is supplied with a sine high AC voltage, while the exposed electrode is feed by a synchronized pulse voltage. Based on the thrust force and power consumption measurements, a parametric study was performed using a positive pulse applied at the trough phase of the AC cycles in which the thrust force was observed to increase by about 100% to 300% and the efficiency up to about 100% compared with the AC-only supply conditions for different AC voltages within the tested range. The pulse-induced breakdown effect was analyzed from the electrical and light emission waveforms to reveal the underlying mechanism. The surface potential due to the charge deposition effect was also measured using a specially designed corona-like discharge potential probe. It is shown that the pulse-induced breakdown was able to cause a temporarily intensified local electric field to enhance the glow-like discharge and meanwhile increase the time-average surface potential in the region further downstream. The improvement in the force by the enhancement in the pulse-induced breakdown was mainly due to enhancements in the glow-like discharge and the surface potential increment, with the latter being more important when the AC voltage is higher.

  17. Assessing Bias in Search Engines.

    ERIC Educational Resources Information Center

    Mowshowitz, Abbe; Kawaguchi, Akira

    2002-01-01

    Addresses the measurement of bias in search engines on the Web, defining bias as the balance and representation of items in a collection retrieved from a database for a set of queries. Assesses bias by measuring the deviation from the ideal of the distribution produced by a particular search engine. (Author/LRW)

  18. Negativity bias and basic values.

    PubMed

    Schwartz, Shalom H

    2014-06-01

    Basic values explain more variance in political attitudes and preferences than other personality and sociodemographic variables. The values most relevant to the political domain are those likely to reflect the degree of negativity bias. Value conflicts that represent negativity bias clarify differences between what worries conservatives and liberals and suggest that relations between ideology and negativity bias are linear. PMID:24970450

  19. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  20. Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors

    SciTech Connect

    Devine, R. A. B.

    2006-04-15

    Preliminary measurements of positive and negative bias stress and radiation effects in poly-three-hexylthiophene based field effect transistors are reported. Radiation up to 0.5 Mrad (SiO{sub 2}) is found to have little effect on channel carrier mobility though bias stressing does. A strong positive bias stress induced positive threshold voltage shift is suppressed when devices are simultaneously irradiated. There is no evidence for significant radiation effects in the organic semiconductor. Recovery effects are observed following removal of bias stress and radiation.

  1. Electrical transport properties and current density - voltage characteristic of PVA-Ag nanocomposite film

    NASA Astrophysics Data System (ADS)

    Das, A. K.; Dutta, B.; Sinha, S.; Mukherjee, A.; Basu, S.; Meikap, A. K.

    2016-05-01

    Silver (Ag) nanoparticle and Polyvinyl alcohol (PVA) - Silver (Ag) composite have been prepared and its dielectric constant, ac conductivity, and current density-voltage characteristics have been studied, at and above room temperature. Here correlated barrier hopping found to be the dominant charge transport mechanism with maximum barrier height of 0.11 eV. The sample, under ±5 V applied voltage, show back to back Schottky diode behaviour.

  2. Automatic voltage-imbalance detector

    SciTech Connect

    Bobbett, R.E.; McCormick, J.B.; Kerwin, W.J.

    1981-05-20

    A device is described for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  3. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  4. Variable frequency inverter for ac induction motors with torque, speed and braking control

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1975-01-01

    A variable frequency inverter was designed for driving an ac induction motor which varies the frequency and voltage to the motor windings in response to varying torque requirements for the motor so that the applied voltage amplitude and frequency are of optimal value for any motor load and speed requirement. The slip frequency of the motor is caused to vary proportionally to the torque and feedback is provided so that the most efficient operating voltage is applied to the motor. Winding current surge is limited and a controlled negative slip causes motor braking and return of load energy to a dc power source.

  5. System and method for monitoring and controlling stator winding temperature in a de-energized AC motor

    DOEpatents

    Lu, Bin; Luebke, Charles John; Habetler, Thomas G.; Zhang, Pinjia; Becker, Scott K.

    2011-12-27

    A system and method for measuring and controlling stator winding temperature in an AC motor while idling is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of a multi-phase AC motor. The circuit further includes a plurality of switching devices to control current flow and terminal voltages in the multi-phase AC motor and a controller connected to the circuit. The controller is configured to activate the plurality of switching devices to create a DC signal in an output of the motor control device corresponding to an input to the multi-phase AC motor, determine or estimate a stator winding resistance of the multi-phase AC motor based on the DC signal, and estimate a stator temperature from the stator winding resistance. Temperature can then be controlled and regulated by DC injection into the stator windings.

  6. Modeling of hole confinement gate voltage range for SiGe channel p-MOSFETs

    NASA Astrophysics Data System (ADS)

    Niu, G. F.; Ruan, G.; Zhang, D. H.

    1996-01-01

    An analytical model of hole confinement gate voltage range is derived for SiGe-channel p-MOSFETs and verified by SEDAN-3 simulation. The hole confinement gate voltage range is shown to be a function of threshold voltage, gate oxide thickness to Si cap thickness ratio, gate material, and Ge mole fraction. Si cap should be thinned with device scaling and power supply decreasing to keep the same hole confinement so as to realise full bias range SiGe-channel operation. It is clarified that various bulk and SIO SiGe p-MOSFETs have the same hole confinement under the same threshold voltage.

  7. Unlikely Combination of Experiments with a Novel High-Voltage CIGS Photovoltaic Array (Presentation)

    SciTech Connect

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    The goals of this study are to: (1) parameterize current-voltage (I-V) performance over a wide range of illumination and temperatures: (a) 50-1150 W/m{sup 2} irradiance, 5-65 C; (b) obtain array temperature coefficients; and (c) quantify energy production; (2) investigate high-voltage leakage currents from the CIS modules in a high-voltage array: determine dependence on moisture, temperature, and voltage bias and ascertain corrosion problems if any; and (3) study long-term power and energy production stability.

  8. Three-Phase and Six-Phase AC at the Lab Bench

    ERIC Educational Resources Information Center

    Caplan, George M.

    2009-01-01

    Utility companies generate three-phase electric power, which consists of three sinusoidal voltages with phase angles of 0 degrees, 120 degrees, and 240 degrees. The ac generators described in most introductory textbooks are single-phase generators, so physics students are not likely to learn about three-phase power. I have developed a simple way…

  9. Charge-pump voltage converter

    DOEpatents

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  10. The System Impact of Air-Conditioner Under-voltage Protection Schemes

    SciTech Connect

    Lu, Ning; Yang, Bo; Huang, Zhenyu; Bravo, Richard

    2009-03-31

    This paper presents simulation results of evaluating an under-voltage protection scheme designed to take stalled air-conditioner (a/c) units offline such that the slow voltage recovery phenomena can be solved on areas heavily loaded with a/c motors during summer peak periods. A three feeder test-bed has been first used to quantify the effectiveness of the protection scheme and the sensitivity of the under-voltage relay settings. Then two real system events of the Western US power grid have been studied to evaluate the area impact of the protection scheme proposed by Southern California Edison. The study demonstrates that by taking all or most of the stalled a/c unit offline, the feeder voltage will recover in a few seconds, much quicker than the tens of seconds that the standard thermal relays imbedded in the motors need to trip the units. The drawback of the control scheme is that after the voltage recover, it settled at a higher voltage than before the faults because a large chuck of load has been shed.

  11. Surface potential distribution and airflow performance of different air-exposed electrode plasma actuators at different alternating current/direct current voltages

    SciTech Connect

    Yang, Liang; Yan, Hui-Jie; Qi, Xiao-Hua; Hua, Yue; Ren, Chun-Sheng

    2015-04-15

    Asymmetric surface dielectric barrier discharge (SDBD) plasma actuators have been intensely studied for a number of years due to their potential applications for aerodynamic control. In this paper, four types of actuators with different configurations of exposed electrode are proposed. The SDBD actuators investigated are driven by dual-power supply, referred to as a fixed AC high voltage and an adjustable DC bias. The effects of the electrode structures on the dielectric surface potential distribution, the electric wind velocity, and the mean thrust production are studied, and the dominative factors of airflow acceleration behavior are revealed. The results have shown that the actions of the SDBD actuator are mainly dependent on the geometry of the exposed electrode. Besides, the surface potential distribution can effectively affect the airflow acceleration behavior. With the application of an appropriate additional DC bias, the surface potential will be modified. As a result, the performance of the electric wind produced by a single SDBD can be significantly improved. In addition, the work also illustrates that the actuators with more negative surface potential present better mechanical performance.

  12. Lateral separation of colloids or cells by dielectrophoresis augmented by AC electroosmosis.

    PubMed

    Zhou, Hao; White, Lee R; Tilton, Robert D

    2005-05-01

    Colloidal particles and biological cells are patterned and separated laterally adjacent to a micropatterned electrode array by applying AC electric fields that are principally oriented normally to the electrode array. This is demonstrated for yeast cells, red blood cells, and colloidal polystyrene particles of different sizes and zeta-potentials. The separation mechanism is observed experimentally to depend on the applied field frequency and voltage. At high frequencies, particles position themselves in a manner that is consistent with dielectrophoresis, while at low frequencies, the positioning is explained in terms of a strong coupling between gravity, the vertical component of the dielectrophoretic force, and the Stokes drag on particles induced by AC electroosmotic flow. Compared to high frequency dielectrophoretic separations, the low frequency separations are faster and require lower applied voltages. Furthermore, the AC electroosmosis coupling with dielectrophoresis may enable cell separations that are not feasible based on dielectrophoresis alone. PMID:15797412

  13. Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

    DOEpatents

    Gallegos-Lopez, Gabriel; Nagashima, James M.; Perisic, Milun; Hiti, Silva

    2012-06-05

    A system is provided for controlling two alternating current (AC) machines via a five-phase PWM inverter module. The system comprises a first control loop, a second control loop, and a current command adjustment module. The current command adjustment module operates in conjunction with the first control loop and the second control loop to continuously adjust current command signals that control the first AC machine and the second AC machine such that they share the input voltage available to them without compromising the target mechanical output power of either machine. This way, even when the phase voltage available to either one of the machines decreases, that machine outputs its target mechanical output power.

  14. A system for tranmitting low frequency analog signals over ac power lines

    DOEpatents

    Baker, S.P.; Durall, R.L.; Haynes, H.D.

    1987-07-30

    A system for transmitting low frequency analog signals over ac power lines using FM modulation. A low frequency analog signal to be transmitted is first applied to a voltage-to-frequency converter where it is converted to a signal whose frequency varies in proportion to the analog signal amplitude. This signal is then used to modulate the carrier frequency of an FM transmitter coupled to an ac power line. The modulation signal frequency range is selected to be within the response band of the FM transmitter. The FM modulated carrier signal is received by an FM receiver coupled to the ac power line, demodulated and the demodulated signal frequency is converted by a frequency-to-voltage converter back to the form of the original low frequency analog input signal. 4 figs.

  15. System for transmitting low frequency analog signals over AC power lines

    DOEpatents

    Baker, Steven P.; Durall, Robert L.; Haynes, Howard D.

    1989-09-05

    A system for transmitting low frequency analog signals over AC power lines using FM modulation. A low frequency analog signal to be transmitted is first applied to a voltage-to-frequency converter where it is converted to a signal whose frequency varies in proportion to the analog signal amplitude. This signal is then used to modulate the carrier frequency of an FM transmitter coupled to an AC power line. The modulation signal frequency range in selected to be within the response band of the FM transmitter. The FM modulated carrier signal is received by an FM receiver coupled to the AC power line, demodulated and the demodulated signal frequency is converted by a frequency-to-voltage converter back to the form of the original low frequency analog input signal.

  16. System for transmitting low frequency analog signals over AC power lines

    DOEpatents

    Baker, Steven P.; Durall, Robert L.; Haynes, Howard D.

    1989-01-01

    A system for transmitting low frequency analog signals over AC power lines using FM modulation. A low frequency analog signal to be transmitted is first applied to a voltage-to-frequency converter where it is converted to a signal whose frequency varies in proportion to the analog signal amplitude. This signal is then used to modulate the carrier frequency of an FM transmitter coupled to an AC power line. The modulation signal frequency range in selected to be within the response band of the FM transmitter. The FM modulated carrier signal is received by an FM receiver coupled to the AC power line, demodulated and the demodulated signal frequency is converted by a frequency-to-voltage converter back to the form of the original low frequency analog input signal.

  17. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test: Preprint

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-07-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or coulombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  18. Power control for ac motor

    NASA Technical Reports Server (NTRS)

    Dabney, R. W. (Inventor)

    1984-01-01

    A motor controller employing a triac through which power is supplied to a motor is described. The open circuit voltage appearing across the triac controls the operation of a timing circuit. This timing circuit triggers on the triac at a time following turn off which varies inversely as a function of the amplitude of the open circuit voltage of the triac.

  19. Improved transistorized AC motor controller for battery powered urban electric passenger vehicles

    NASA Technical Reports Server (NTRS)

    Peak, S. C.

    1982-01-01

    An ac motor controller for an induction motor electric vehicle drive system was designed, fabricated, tested, evaluated, and cost analyzed. A vehicle performance analysis was done to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of ac motor and ac controller requirements. The power inverter is a three-phase bridge using power Darlington transistors. The induction motor was optimized for use with an inverter power source. The drive system has a constant torque output to base motor speed and a constant horsepower output to maximum speed. A gear shifting transmission is not required. The ac controller was scaled from the base 20 hp (41 hp peak) at 108 volts dec to an expanded horsepower and battery voltage range. Motor reversal was accomplished by electronic reversal of the inverter phase sequence. The ac controller can also be used as a boost chopper battery charger. The drive system was tested on a dynamometer and results are presented. The current-controlled pulse width modulation control scheme yielded improved motor current waveforms. The ac controller favors a higher system voltage.

  20. AC operation and runaway electron behaviour in HT-7 tokamak

    NASA Astrophysics Data System (ADS)

    Lu, Hong-Wei; Hu, Li-Qun; Zhou, Rui-Jie; Lin, Shi-Yao; Zhong, Guo-Qiang; Wang, Shao-Feng; Chen, Kai-Yun; Xu, Ping; Zhang, Ji-Zong; Ling, Bi-Li; Mao, Song-Tao; Duan, Yan-Min

    2010-06-01

    Operation of HT-7 tokamak in a multicycle alternating square wave plasma current regime is reported. A set of AC operation experiments, including LHW heating to enhance plasma ionization during the current transition and current sustainment, is described. The behaviour of runaway electrons is analysed by four HXR detectors tangentially viewing the plasma in the equatorial plane, within energy ranges 0.3-1.2 MeV and 0.3-7 MeV, separately. High energy runaway electrons (~MeV) are found to circulate predominantly in the opposite direction to the plasma current, while the number of low energy runaway electrons (~tens to hundreds of keV) circulating along the plasma current is comparable to that in the direction opposite to the plasma current. AC operation with lower hybrid current drive (LHCD) is observed to have an additional benefit of suppressing the runaway electrons if the drop of the loop voltage is large enough.

  1. A high voltage power converter for space astronomy applications

    NASA Technical Reports Server (NTRS)

    Ray, David C.; Lampton, Michael L.

    1988-01-01

    A dc-dc low-power, high-voltage converter for use in space is described which furnishes a commandable, low-noise dc output in the range of 0 to -7500 V. The converter is suitable for biasing of detectors commonly employed in space astronomy, microchannel plates, photomultipliers, and gas discharge detectors. The converter's reliability has been demonstrated by accelerated life testing under thermal vacuum. The electrical and mechanical design, packaging, layout and fabrication techniques, and tests employed are described.

  2. Determination of threshold and maximum operating electric stresses for selected high voltage insulations: Investigation of aged polymeric dielectric cable. Final report

    SciTech Connect

    Eager, G.S. Jr.; Seman, G.W.; Fryszczyn, B.

    1995-11-01

    Based on the successful completion of the extensive research project DOE/ET/29303-1 February 1982 to develop a new method for the determination of threshold voltage in XLPE and EPR insulated cables, tests were initiated to establish the maximum safe operating voltage stresses of crosslinked polyethylene insulated cables that become wet when they operate in a moist environment. The present report covers the measurement of the threshold voltage, the a.c. breakdown voltage and the impulse breakdown voltage of XLPE cable after undergoing accelerated laboratory aging in water. Model and 15 kV XLPE cables were manufactured in commercial equipment using state-of-the-art semiconducting shields and XLPE insulation. The threshold voltage, a.c. voltage breakdown and impulse voltage breakdown of the model cables were determined before aging, after aging one week and after aging 26 weeks. The model cable, following 26 weeks aging, was dried by passing dry gas through the conductor interstices which removed moisture from the cable. The threshold voltage, the a.c. voltage breakdown and the impulse voltage breakdown of the XLPE model cable after drying was measured.

  3. AC and lightning performance of fiberglass crossarms aged in 115 kV transmission line

    SciTech Connect

    Grzybowski, S. . Dept. of Electrical and Computer Engineering); Jenkins, E.B. . Generation and Transmission Group)

    1993-10-01

    This paper presents the results of an investigation of the electrical performance of 115 kV transmission line fiberglass cross-arm used by Mississippi Power and Light Company. A transmission line fiberglass crossarm removed from service and companion cross-arms outdoors but not in service were examined. The evaluation of electrical performance was based on flashover voltage value at AC voltage and standard lightning impulses as well as under dry and wet conditions. The tests were performed in the Mississippi State University High Voltage Laboratory. The obtained flashover voltages show no large differences in electrical strength of fiberglass crossarms removed from service and those stored outdoors. The Added CFO voltage by fiberglass crossarm to the porcelain suspension insulators is presented versus the length of the fiberglass crossarm for dry and wet conditions.

  4. Performance of McRAS-AC in the GEOS-5 AGCM: aerosol-cloud-microphysics, precipitation, cloud radiative effects, and circulation

    NASA Astrophysics Data System (ADS)

    Sud, Y. C.; Lee, D.; Oreopoulos, L.; Barahona, D.; Nenes, A.; Suarez, M. J.

    2013-01-01

    A revised version of the Microphysics of clouds with Relaxed Arakawa-Schubert and Aerosol-Cloud interaction scheme (McRAS-AC) including, among others, a new ice nucleation parameterization, is implemented in the GEOS-5 AGCM. Various fields from a 10-yr-long integration of the AGCM with McRAS-AC are compared with their counterparts from an integration of the baseline GEOS-5 AGCM, as well as satellite observations. Generally McRAS-AC simulations have smaller biases in cloud fields and cloud radiative effects over most of the regions of the Earth than the baseline GEOS-5 AGCM. Two systematic biases are identified in the McRAS-AC runs: one is underestimation of cloud particle numbers around 40° S-60° S, and one is overestimate of cloud water path during the Northern Hemisphere summer over the Gulf Stream and North Pacific. Sensitivity tests show that these biases potentially originate from biases in the aerosol input. The first bias is largely eliminated in a test run using 50% smaller radius of sea-salt aerosol particles, while the second bias is substantially reduced when interactive aerosol chemistry is turned on. The main weakness of McRAS-AC is the dearth of low-level marine stratus clouds, a probable outcome of lack of explicit dry-convection in the cloud scheme. Nevertheless, McRAS-AC largely simulates realistic clouds and their optical properties that can be improved further with better aerosol input. An assessment using the COSP simulator in a 1-yr integration provides additional perspectives for understanding cloud optical property differences between the baseline and McRAS-AC simulations and biases against satellite data. Overall, McRAS-AC physically couples aerosols, the microphysics and macrophysics of clouds, and their radiative effects and thereby has better potential to be a valuable tool for climate modeling research.

  5. Current-biased Transition-edge Sensors Based on Re-entrant Superconductors

    NASA Astrophysics Data System (ADS)

    Gulian, A.; Nikoghosyan, V.; Tollaksen, J.; Vardanyan, V.; Kuzanyan, A.

    Transition-edge sensors are widely recognized as one of the most sensitive tools for the photon and particles detection in many areas, from astrophysics to quantum computing. Their application became practical after understanding that rather than being biased in a constant current mode, they should be biased in a constant voltage mode. Despite the methods of voltage biasing of these sensors are well developed since then, generally the current biasing is more convenient for superconducting circuits. Thus transition-edge sensors designed inherently to operate in the current-biased mode are desirable. We developed a design for such detectors based on re-entrant superconductivity. In this case constant current biasing takes place in the normal state, below the superconducting transition, so that following the absorption of a photon it does not yield a latching. Rather, the sensor gains energy and shifts towards the lower resistant (e.g., superconducting) state, and then cools down faster (since Joule heating is now reduced), and resets in a natural way to be able to detect the next photon. We prototyped this kind of transition edge sensors and tested them operational in accordance with the outlined physics. The samples used in experiments were modified compositions of YBCO-superconductors in a ceramic form (which, as we discovered, reproducibly demonstrates re-entrant superconductivity). In this presentation we report their composition, methods of preparation, and the detection results. This approach, in some areas, may have practical advantage over the traditional voltage-biased devices.

  6. Growth of oxide exchange bias layers

    DOEpatents

    Chaiken, Alison; Michel, Richard P.

    1998-01-01

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

  7. Microwave-induced constant-voltage steps at one volt from a series array of Josephson junctions

    SciTech Connect

    Niemeyer, J.; Hinken, J.H.; Kautz, R.L.

    1984-08-15

    It is demonstrated that a series array of 1474 Josephson junctions can produce quantized voltages up to 1.2 V when driven by microwaves at 90 GHz in the absence of a dc bias. This result brings closer the possibility of a practical Josephson voltage standard at the 1-V level.

  8. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  9. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  10. Modelling a single phase voltage controlled rectifier using Laplace transforms

    NASA Technical Reports Server (NTRS)

    Kraft, L. Alan; Kankam, M. David

    1992-01-01

    The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.

  11. Reduction in plasma potential by applying negative DC cathode bias in RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Isomura, Masao; Yamada, Toshinori; Osuga, Kosuke; Shindo, Haruo

    2016-11-01

    We applied a negative DC bias voltage to the cathode of an RF magnetron sputtering system and successfully reduced the plasma potential in both argon plasma and hydrogen-diluted argon plasma. The crystallinity of the deposited Ge films is improved by increasing the negative DC bias voltage. It is indicated that the reduction in plasma potential is effective for reducing the plasma damage on deposited materials, caused by the electric potential between the plasma and substrates. In addition, the deposition rate is increased by the increased electric potential between the plasma and the cathode owing to the negative DC bias voltage. The present method successfully gives us higher speed and lower damage sputtering deposition. The increased electric potential between the plasma and the cathode suppresses the evacuation of electrons from the plasma and also enhances the generation of secondary electrons on the cathode. These probably suppress the electron loss from the plasma and result in the reduction in plasma potential.

  12. Input-current shaped ac to dc converters

    NASA Technical Reports Server (NTRS)

    1986-01-01

    The problem of achieving near unity power factor while supplying power to a dc load from a single phase ac source of power is examined. Power processors for this application must perform three functions: input current shaping, energy storage, and output voltage regulation. The methods available for performing each of these three functions are reviewed. Input current shaping methods are either active or passive, with the active methods divided into buck-like and boost-like techniques. In addition to large reactances, energy storage methods include resonant filters, active filters, and active storage schemes. Fast voltage regulation can be achieved by post regulation or by supplementing the current shaping topology with an extra switch. Some indications of which methods are best suited for particular applications concludes the discussion.

  13. An AC drive system for a battery driven moped

    SciTech Connect

    Nandi, S.; Saha, S.; Sharon, M.; Sundersingh, V.P.

    1995-12-31

    A petrol driven moped is converted to an electric one by replacing the petrol engine by a three phase 1.5 HR, AC squirrel cage induction motor drive system. The motor voltage rating selected is 200 V to keep the DC boost voltage level to a reasonable value.f the power source used is a high energy density, 24 V, 110 Ah, Ni-Zn battery. A modified indirect current controlled step-up chopper as well as a standard push-pull DC-DC boost converter is studied for the boost scheme. A simple three phase quasi-square wave inverter is designed along with suitable protection for driving the motor. Successful trial test of the system has been conducted at the laboratory.

  14. Development of AC and DC Power Supply Direct Interface Converter

    NASA Astrophysics Data System (ADS)

    Kato, Koji; Itoh, Jun-Ichi

    This paper proposes a novel control method for a direct interface converter for management of the energy flow in either an AC or DC supply. The proposed converter is constructed based on an indirect matrix converter. Therefore a proposed control strategy is based on an indirect control method with a triangular carrier wave. The basic operation of the proposed control method is confirmed by experimental results. In addition, this paper also proposes a commutation error compensation method of an output voltage error and an input current error for an indirect matrix converter. In the proposed method, the output voltage and input current error by the commutation can be compensated at the same time, because the PWM pulse of each switch is directly compensated. The validity of the proposed method is confirmed by experimental results. Those results prove that the proposed compensation method can decrease total harmonic distortion (THD) of the input and output current.

  15. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    PubMed

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores. PMID:27428174

  16. Transistor voltage comparator performs own sensing

    NASA Technical Reports Server (NTRS)

    Cliff, R. A.

    1965-01-01

    Detection of the highest voltage input among a group of varying voltage inputs is accomplished by a transistorized voltage comparison circuit. The collector circuits of the transistors perform the sensing function. Input voltage levels are governed by the transistors.

  17. Ambipolar transition voltage spectroscopy: Analytical results and experimental agreement

    NASA Astrophysics Data System (ADS)

    Bâldea, Ioan

    2012-01-01

    This work emphasizes that the transition voltages Vt± for both bias polarities (V ≷ 0) should be used to properly determine the energy offset ɛ0 of the molecular orbital closest to electrodes’ Fermi level and the bias asymmetry γ in molecular junctions. Accurate analytical formulas are deduced to estimate ɛ0 and γ solely in terms of Vt±. These estimates are validated against experiments, by showing that full experimental I-V curves measured by Beebe [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.97.026801 97, 026801 (2006)] and Tan [Appl. Phsy. Lett.APPLAB0003-695110.1063/1.3291521 96, 013110 (2010)] for both bias polarities can be excellently reproduced.

  18. Restrictions on TWT Helix Voltage Ripple for Acceptable Notch Filter Performance

    SciTech Connect

    Hyslop, B.

    1984-12-01

    An ac ripple on the helix voltage of the 1-2 GHz TWT's creates FM sidebands that cause amplitude and phase modulation of the microwave TWT output signal. A limit of 16 volts peak-to-peak is required for acceptable superconducting notch filter performance.

  19. The intentionality bias and schizotypy.

    PubMed

    Moore, J W; Pope, A

    2014-01-01

    The "intentionality bias" refers to our automatic tendency to judge other people's actions to be intentional. In this experiment we extended research on this effect in two key ways. First, we developed a novel nonlinguistic task for assessing the intentionality bias. This task used video stimuli of ambiguous movements. Second, we investigated the relationship between the strength of this bias and schizotypy (schizophrenia-like symptoms in healthy individuals). Our results showed that the intentionality bias was replicated for the video stimuli and also that this bias is stronger in those individuals scoring higher on the schizotypy rating scales. Overall these findings lend further support for the existence of the intentionality bias. We also discuss the possible relevance of these findings for our understanding of certain symptoms of schizophrenic illness.

  20. Phase-sensitive detection of spin pumping via the ac inverse spin Hall effect.

    PubMed

    Weiler, Mathias; Shaw, Justin M; Nembach, Hans T; Silva, Thomas J

    2014-10-10

    We use a phase-sensitive, quantitative technique to separate inductive and ac inverse spin Hall effect (ISHE) voltages observed in Ni(81)Fe(19)/normal metal multilayers under the condition of ferromagnetic resonance. For Ni(81)Fe(19)/Pt thin film bilayers and at microwave frequencies from 7 to 20 GHz, we observe an ac ISHE magnitude that is much larger than that expected from the dc spin Hall angle Θ(SH)(Pt) = 0.1. Furthermore, at these frequencies, we find an unexpected, ≈ 110° phase of the ac ISHE signal relative to the in-plane component of the resonant magnetization precession. We attribute our findings to a dominant intrinsic ac ISHE in Pt.

  1. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    SciTech Connect

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  2. Generator voltage stabilisation for series-hybrid electric vehicles.

    PubMed

    Stewart, P; Gladwin, D; Stewart, J; Cowley, R

    2008-04-01

    This paper presents a controller for use in speed control of an internal combustion engine for series-hybrid electric vehicle applications. Particular reference is made to the stability of the rectified DC link voltage under load disturbance. In the system under consideration, the primary power source is a four-cylinder normally aspirated gasoline internal combustion engine, which is mechanically coupled to a three-phase permanent magnet AC generator. The generated AC voltage is subsequently rectified to supply a lead-acid battery, and permanent magnet traction motors via three-phase full bridge power electronic inverters. Two complementary performance objectives exist. Firstly to maintain the internal combustion engine at its optimal operating point, and secondly to supply a stable 42 V supply to the traction drive inverters. Achievement of these goals minimises the transient energy storage requirements at the DC link, with a consequent reduction in both weight and cost. These objectives imply constant velocity operation of the internal combustion engine under external load disturbances and changes in both operating conditions and vehicle speed set-points. An electronically operated throttle allows closed loop engine velocity control. System time delays and nonlinearities render closed loop control design extremely problematic. A model-based controller is designed and shown to be effective in controlling the DC link voltage, resulting in the well-conditioned operation of the hybrid vehicle. PMID:18262528

  3. A high voltage method for measuring low capacitance for tomography.

    PubMed

    Lu, Decai; Shao, Fuqun; Guo, Zhiheng

    2009-05-01

    Low capacitance measurement is involved in many industrial applications, especially in the applications of electrical capacitance tomography (ECT). Most of the low capacitance measurement circuits employ an ac-based method or a charge/discharge method because of high sensitivity, high resolution, and immunity to stray capacitance; and its excitation or charge voltage are not more than 20 V. When ECT techniques for large industrial equipment such as blast furnaces or grain barns are explored, the existing methods for measuring low capacitance have some limitations. This paper proposes a high excitation voltage ac-based method for measuring low capacitance to improve the resolution of measurement. The method uses a high excitation voltage of several hundred volts and a transformer ratio arms as the C/V transducer. Experimental results indicate that the new method has a resolution of 0.005 fF, a good stability (about 0.003 fF over 4 h) and linearity (0.9992). PMID:19485513

  4. A high voltage method for measuring low capacitance for tomography.

    PubMed

    Lu, Decai; Shao, Fuqun; Guo, Zhiheng

    2009-05-01

    Low capacitance measurement is involved in many industrial applications, especially in the applications of electrical capacitance tomography (ECT). Most of the low capacitance measurement circuits employ an ac-based method or a charge/discharge method because of high sensitivity, high resolution, and immunity to stray capacitance; and its excitation or charge voltage are not more than 20 V. When ECT techniques for large industrial equipment such as blast furnaces or grain barns are explored, the existing methods for measuring low capacitance have some limitations. This paper proposes a high excitation voltage ac-based method for measuring low capacitance to improve the resolution of measurement. The method uses a high excitation voltage of several hundred volts and a transformer ratio arms as the C/V transducer. Experimental results indicate that the new method has a resolution of 0.005 fF, a good stability (about 0.003 fF over 4 h) and linearity (0.9992).

  5. Generator voltage stabilisation for series-hybrid electric vehicles.

    PubMed

    Stewart, P; Gladwin, D; Stewart, J; Cowley, R

    2008-04-01

    This paper presents a controller for use in speed control of an internal combustion engine for series-hybrid electric vehicle applications. Particular reference is made to the stability of the rectified DC link voltage under load disturbance. In the system under consideration, the primary power source is a four-cylinder normally aspirated gasoline internal combustion engine, which is mechanically coupled to a three-phase permanent magnet AC generator. The generated AC voltage is subsequently rectified to supply a lead-acid battery, and permanent magnet traction motors via three-phase full bridge power electronic inverters. Two complementary performance objectives exist. Firstly to maintain the internal combustion engine at its optimal operating point, and secondly to supply a stable 42 V supply to the traction drive inverters. Achievement of these goals minimises the transient energy storage requirements at the DC link, with a consequent reduction in both weight and cost. These objectives imply constant velocity operation of the internal combustion engine under external load disturbances and changes in both operating conditions and vehicle speed set-points. An electronically operated throttle allows closed loop engine velocity control. System time delays and nonlinearities render closed loop control design extremely problematic. A model-based controller is designed and shown to be effective in controlling the DC link voltage, resulting in the well-conditioned operation of the hybrid vehicle.

  6. High voltage feedthrough bushing

    DOEpatents

    Brucker, John P.

    1993-01-01

    A feedthrough bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  7. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  8. Contamination effects on fixed-bias Langmuir probes.

    PubMed

    Steigies, C T; Barjatya, A

    2012-11-01

    Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region. PMID:23206057

  9. Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO3

    NASA Astrophysics Data System (ADS)

    Cao, Y.; Shen, J.; Randall, C. A.; Chen, L. Q.

    2014-05-01

    A self-consistent model has been proposed to study the switchable current-voltage (I-V) characteristics in Cu/BaTiO3/Cu sandwiched structure combining the phase-field model of ferroelectric domains and diffusion equations for ionic/electronic transport. The electrochemical transport equations and Ginzburg-Landau equations are solved using the Chebyshev collocation algorithm. We considered a single parallel plate capacitor configuration which consists of a single layer BaTiO3 containing a single tetragonal domain orientated normal to the plate electrodes (Cu) and is subject to a sweep of ac bias from -1.0 to 1.0 V at 25 °C. Our simulation clearly shows rectifying I-V response with rectification ratios amount to 102. The diode characteristics are switchable with an even larger rectification ratio after the polarization direction is flipped. The effects of interfacial polarization charge, dopant concentration, and dielectric constant on current responses were investigated. The switchable I-V behavior is attributed to the polarization bound charges that modulate the bulk conduction.

  10. A self-biased PLL with low power and compact area

    NASA Astrophysics Data System (ADS)

    Hailong, Jia; Xianmin, Chen; Qi, Liu; Guangtao, Feng

    2015-10-01

    A new low power, low phase jitter, compact realization, and self-biased PLL, which is fabricated on SMIC 40 nm CMOS technology is introduced. The proposed self-biased PLL eliminates extra band gap biasing circuits, and internally generates all the biasing voltages and currents. Meanwhile, all of the PLL dynamic loop parameters, such as loop bandwidth, natural frequency, damping factors are kept constant adaptively. By optimizing the circuit structures, the perfect unity of chip estate, power dissipation, phase jitter, and loop stability is achieved. The PLL consumes 4.2 mW of power under 1.1 V/2.5 V voltage supply at 2.4 GHz VCO frequency, while occupying a die area of less than 0.02 mm2 (180 × 110 μm2), and the typical period jitter (RMS) is around 2.8 ps.

  11. Back bias induced dynamic and steep subthreshold swing in junctionless transistors

    SciTech Connect

    Parihar, Mukta Singh; Kranti, Abhinav

    2014-07-21

    In this work, we analyze back bias induced steep and dynamic subthreshold swing in junctionless double gate transistors operated in the asymmetric mode. This impact ionization induced dynamic subthreshold swing is explained in terms of the ratio between minimum hole concentration and peak electron concentration, and the dynamic change in the location of the conduction channel with applied front gate voltage. The reason for the occurrence of impact ionization at sub-bandgap drain voltages in silicon junctionless transistors is also accounted for. The optimum junctionless transistor operating at a back gate bias of −0.9 V, achieves over 5 orders of change in drain current at a gate overdrive of 200 mV and drain bias of 1 V. These results for junctionless transistors are significantly better than those exhibited by silicon tunnel field effect transistors operating at the same drain bias.

  12. Effect of the reference electrode size on the ionization instability in the plasma sheath of a small positively biased electrode

    SciTech Connect

    Bliokh, Y. P.; Brodsky, Yu. L.; Chashka, Kh. B.; Felsteiner, J.; Slutsker, Ya. Z.

    2011-06-01

    It is well known that additional ionization in the vicinity of a positively biased electrode immersed into a weakly ionized plasma is responsible for a hysteresis in the electrode current-voltage characteristics and the current self-oscillations rise. Here we show both experimentally and theoretically that under certain conditions these phenomena cannot be correctly interpreted once considered separately from the reference electrode current-voltage characteristics. It is shown that small electrodes can be separated into three groups according to the relation between the electrode and the reference electrode areas. Each group is characterized by its own dependence of the collected current on the bias voltage.

  13. Pulsed DC bias effects on p-type semiconductor SrCu2O2 film deposited by RF magnetron sputtering.

    PubMed

    Seok, Hye-Won; Kim, Sei-Ki; Lee, Hyun-Seok; Lee, Mi-Jae; Ju, Byeong-Kwon

    2013-05-01

    Transparent p-type semiconducting SrCu2O2 films have been deposited by RF magnetron sputtering under unbalanced bipolar pulsed DC bias on low-alkali glass substrates in a mixed gas of 1% H2/Ar below 400 degrees C. The pulsed DC bias voltages to substrate were varied from 0 V to -200 V with a frequency of 350 kHz. The effect of pulsed DC bias on the structure and electrical and optical properties of SrCu2O2 films has been investigated using SEM, XRD, surface profiler, Hall measurements and UV-VIS spectrometer. The deposition rates of SrCu2O2 films under DC-pulsed bias show a maximum at -100 V bias, and decreased with increasing the bias voltage. XRD results of the as-deposited films under the bias voltage at 400 degrees C reveal SrCu2O2 polycrystalline phase, and increased crystallite size with increasing pulsed DC bias voltage. The SrCu2O2 films deposited under the pulsed-bias of -100 V exhibits the highest conductivity of 0.08 S/cm, and over 70% of transmittance at 550 nm. It is confirmed that the application of pulsed DC bias in sputtering improves the crystallization, crystal growth, and the electrical and optical properties eventually under 400 degrees C. PMID:23858855

  14. Analyzing effects of aperture size and applied voltage on the response time

    NASA Astrophysics Data System (ADS)

    Kim, YooKwang; Lee, Jin Su; Won, Yong Hyub

    2016-03-01

    Electrowetting lens is a promising technique for non-mechanical vari-focal lens, because of fast response time, wide expressible diopter, and etc. Although electrowetting related papers are actively published, no one did not clearly define the relationship among electrowetting parameters, especially in AC driven case. Analysis for AC voltage driving is needed because AC electrowetting has many advantages like low hysteresis and short settling time. In this experiment we confirmed that the response time depends on aperture size and applied voltage. Response time measurement for lens aperture of 200-1000um and applied voltage of 0-70V with 1kHz frequency was conducted. Experimental data was compared with simulation result by COMSOL Multiphysics program with the same condition, and they correspond with each other well. As voltage increases, the overshoot height becomes higher, so it has longer oscillation and settling time. On the other hand if aperture size decreases, the surface tension of lens wall could be delivered effectively to the center region of meniscus, so it has less oscillation and shorter settling time. The result was that in 500um aperture no more than 30V should be applied to ensure 1ms response time. In 200um aperture, the voltage limit is disappeared.

  15. Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

    NASA Astrophysics Data System (ADS)

    Yen, Cheng-Tyng; Hung, Chien-Chung; Hung, Hsiang-Ting; Lee, Chwan-Ying; Lee, Lurng-Shehng; Huang, Yao-Feng; Hsu, Fu-Jen

    2016-01-01

    We investigated the negative bias temperature instability (NBTI) characteristics of 4H-SiC metal oxide semiconductor field effect transistor (MOSFET) and metal oxide semiconductor capacitor (MOSCAP). The shift of threshold voltage approached saturation with time, and the different magnitude of mid-gap voltage shift with different starting biases observed in capacitance-voltage (CV) curves taken from MOSCAP and MOSFET suggested that the hole trapping was the primary mechanism contributing to the NBTI in this study. The trend of mid-gap voltage shift with starting bias and threshold voltage shift with stress bias showed steep change before -10 V and approached saturation after -10 V which can be explained by a process where the hole trapping was assisted by positively charged interface states. The positively charged interface states may have acted as an intermediate state which reduced the overall energy barrier and facilitated the process of hole trapping. The split-CV sweeps with 0 s and 655 s of hold time were essentially overlapped which was consistent with the time evolution characteristic of hole trapping and supported the interface trap assisted hole trapping mechanism.

  16. Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

    DOEpatents

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

    2016-04-26

    A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  17. Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

    DOEpatents

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

    2016-04-26

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  18. Unlikely Combination of Experiments With a Novel High-Voltage CIGS Photovoltaic Array: Preprint

    SciTech Connect

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  19. A feed-forward controlled AC-DC boost converter for biomedical implants.

    PubMed

    Jiang, Hao; Lan, Di; Lin, Dahsien; Zhang, Junmin; Liou, Shyshenq; Shahnasser, Hamid; Shen, Ming; Harrison, Michael; Roy, Shuvo

    2012-01-01

    Miniaturization is important to make implants clinic friendly. Wireless power transfer is an essential technology to miniaturize implants by reducing their battery size or completely eliminating their batteries. Traditionally, a pair of inductively-coupled coils operating at radio-frequency (RF) is employed to deliver electrical power wirelessly. In this approach, a rectifier is needed to convert the received RF power to a stable DC one. To achieve high efficiency, the induced voltage of the receiving coil must be much higher than the turn-on voltage of the rectifying diode (which could be an active circuit for low turn-on voltage) [1]. In order to have a high induced voltage, the size of the receiving coil often is significantly larger than rest of the implant. A rotating magnets based wireless power transfer has been demonstrated to deliver the same amount of power at much lower frequency (around 100 Hz) because of the superior magnetic strength produced by rare-earth magnets [2]. Taking the advantage of the low operating frequency, an innovative feed-forward controlled AC to DC boost converter has been demonstrated for the first time to accomplish the following two tasks simultaneously: (1) rectifying the AC power whose amplitude (500 mV) is less than the rectifier's turn-on voltage (1.44 V) and (2) boosting the DC output voltage to a much higher level (5 V). Within a range, the output DC voltage can be selected by the control circuit. The standard deviation of the output DC voltage is less than 2.1% of its mean. The measured load regulation is 0.4 V/kΩ. The estimated conversion efficiency excluding the power consumption of the control circuits reaches 75%. The converter in this paper has the potential to reduce the size of the receiving coil and yet achieve desirable DC output voltage for powering biomedical implants. PMID:23366230

  20. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    NASA Astrophysics Data System (ADS)

    Benoit, M.; Bilbao de Mendizabal, J.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Lanni, F.; Liu, H.; Meloni, F.; Meng, L.; Miucci, A.; Muenstermann, D.; Nessi, M.; Perić, I.; Rimoldi, M.; Ristic, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Wu, W.; Xu, L.

    2016-07-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  1. An On-Chip Multi-Voltage Power Converter With Leakage Current Prevention Using 0.18 μm High-Voltage CMOS Process.

    PubMed

    Lo, Yi-Kai; Chen, Kuanfu; Gad, Parag; Liu, Wentai

    2016-02-01

    In this paper, we present an on-chip multi-voltage power converter incorporating of a quad-voltage timing-control rectifier and regulators to produce ±12 V and ±1.8 V simultaneously through inductive powering. The power converter achieves a PCE of 77.3% with the delivery of more than 100 mW to the implant. The proposed rectifier adopts a two-phase start-up scheme and mixed-voltage gate controller to avoid substrate leakage current. This current cannot be prevented by the conventional dynamic substrate biasing technique when using the high-voltage CMOS process with transistor threshold voltage higher than the turn-on voltage of parasitic diodes. High power conversion efficiency is achieved by 1) substrate leakage current prevention, 2) operating all rectifying transistors as switches with boosted gate control voltages, and 3) compensating the delayed turn-on and preventing reverse leakage current of rectifying switches with the proposed look-ahead comparator. This chip occupies an area of 970 μm × 4500 μm in a 0.18 μ m 32 V HV CMOS process. The quad-voltage timing-control rectifier alone is able to output a high DC voltage at the range of [2.5 V, 25 V]. With this power converter, both bench-top experiment and in-vivo power link test using a rat model were validated.

  2. Sequential biases in accumulating evidence

    PubMed Central

    Huggins, Richard; Dogo, Samson Henry

    2015-01-01

    Whilst it is common in clinical trials to use the results of tests at one phase to decide whether to continue to the next phase and to subsequently design the next phase, we show that this can lead to biased results in evidence synthesis. Two new kinds of bias associated with accumulating evidence, termed ‘sequential decision bias’ and ‘sequential design bias’, are identified. Both kinds of bias are the result of making decisions on the usefulness of a new study, or its design, based on the previous studies. Sequential decision bias is determined by the correlation between the value of the current estimated effect and the probability of conducting an additional study. Sequential design bias arises from using the estimated value instead of the clinically relevant value of an effect in sample size calculations. We considered both the fixed‐effect and the random‐effects models of meta‐analysis and demonstrated analytically and by simulations that in both settings the problems due to sequential biases are apparent. According to our simulations, the sequential biases increase with increased heterogeneity. Minimisation of sequential biases arises as a new and important research area necessary for successful evidence‐based approaches to the development of science. © 2015 The Authors. Research Synthesis Methods Published by John Wiley & Sons Ltd. PMID:26626562

  3. Thermo-electric charge-to-voltage converter with superconductor-insulator-normal tunnel junction for bolometer applications

    NASA Astrophysics Data System (ADS)

    Kuzmin, Leonid

    2010-11-01

    A novel type of the zero-biased thermo-electric bolometer (TEB) is proposed. The bolometer is based on a charge-to-voltage converter (CVC) with a superconductor-insulator-normal (SIN) tunnel junction and a superconducting absorber. The absorption of photons in the absorber leads to excitation of quasiparticles with some fraction of charge imbalance, tunneling through the SIN junction in zero-biased mode and generation of voltage. The thermoelectric voltage is determined by accumulation of tunneling charge in an external capacitance. Conversion efficiency is very high and voltage values comparable with a superconducting gap are easily achieved. The zero-biased CVC-TEB can be effectively used for creation of an array of bolometers and multi-pixel detection systems.

  4. Effects of surface adsorbed oxygen, applied voltage, and temperature on UV photoresponse of ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Zong, Xian-Li; Zhu, Rong

    2015-10-01

    The ultraviolet (UV) photoresponses of ZnO nanorods directly grown on and between two micro Au-electrodes by using electric-field-assisted wet chemical method are measured comprehensively under different conditions, including ambient environment, applied bias voltage, gate voltage and temperature. Experimental results indicate that the photoresponses of the ZnO nanorods can be modulated by surface oxygen adsorptions, applied voltages, as well as temperatures. A model taking into account both surface adsorbed oxygen and electron-hole activities inside ZnO nanorods is proposed. The enhancement effect of the bias voltage on photoresponse is also analyzed. Experimental results shows that the UV response time (to 63%) of ZnO nanorods in air and at 59 °C could be shortened from 34.8 s to 0.24 s with a bias of 4 V applied between anode and cathode. Project supported by the National Natural Science Foundation of China (Grant No. 91123017).

  5. The ac53, ac78, ac101, and ac103 Genes Are Newly Discovered Core Genes in the Family Baculoviridae

    PubMed Central

    Garavaglia, Matías Javier; Miele, Solange Ana Belén; Iserte, Javier Alonso; Belaich, Mariano Nicolás

    2012-01-01

    The family Baculoviridae is a large group of insect viruses containing circular double-stranded DNA genomes of 80 to 180 kbp, which have broad biotechnological applications. A key feature to understand and manipulate them is the recognition of orthology. However, the differences in gene contents and evolutionary distances among the known members of this family make it difficult to assign sequence orthology. In this study, the genome sequences of 58 baculoviruses were analyzed, with the aim to detect previously undescribed core genes because of their remote homology. A routine based on Multi PSI-Blast/tBlastN and Multi HaMStR allowed us to detect 31 of 33 accepted core genes and 4 orthologous sequences in the Baculoviridae which were not described previously. Our results show that the ac53, ac78, ac101 (p40), and ac103 (p48) genes have orthologs in all genomes and should be considered core genes. Accordingly, there are 37 orthologous genes in the family Baculoviridae. PMID:22933288

  6. Semiconductor ac static power switch

    NASA Technical Reports Server (NTRS)

    Vrancik, J.

    1968-01-01

    Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

  7. Classifying sex biased congenital anomalies

    SciTech Connect

    Lubinsky, M.S.

    1997-03-31

    The reasons for sex biases in congenital anomalies that arise before structural or hormonal dimorphisms are established has long been unclear. A review of such disorders shows that patterning and tissue anomalies are female biased, and structural findings are more common in males. This suggests different gender dependent susceptibilities to developmental disturbances, with female vulnerabilities focused on early blastogenesis/determination, while males are more likely to involve later organogenesis/morphogenesis. A dual origin for some anomalies explains paradoxical reductions of sex biases with greater severity (i.e., multiple rather than single malformations), presumably as more severe events increase the involvement of an otherwise minor process with opposite biases to those of the primary mechanism. The cause for these sex differences is unknown, but early dimorphisms, such as differences in growth or presence of H-Y antigen, may be responsible. This model provides a useful rationale for understanding and classifying sex-biased congenital anomalies. 42 refs., 7 tabs.

  8. Temperature controlled high voltage regulator

    DOEpatents

    Chiaro, Jr., Peter J.; Schulze, Gerald K.

    2004-04-20

    A temperature controlled high voltage regulator for automatically adjusting the high voltage applied to a radiation detector is described. The regulator is a solid state device that is independent of the attached radiation detector, enabling the regulator to be used by various models of radiation detectors, such as gas flow proportional radiation detectors.

  9. Voltage sensor and dielectric material

    DOEpatents

    Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

    2006-10-17

    A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

  10. Allosteric substrate switching in a voltage sensing lipid phosphatase

    PubMed Central

    Grimm, Sasha S.; Isacoff, Ehud Y.

    2016-01-01

    Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We find the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), to have not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage sensing domain (VSD). Using fast FRET reporters of PIPs to monitor enzyme activity and voltage clamp fluorometry to monitor conformational changes in the VSD, we find that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This novel 2-step allosteric control over a dual specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility and endo/exocytosis. PMID:26878552

  11. Allosteric substrate switching in a voltage-sensing lipid phosphatase.

    PubMed

    Grimm, Sasha S; Isacoff, Ehud Y

    2016-04-01

    Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We found that the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), has not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage-sensing domain (VSD). Using fast fluorescence resonance energy transfer (FRET) reporters of PIPs to monitor enzyme activity and voltage-clamp fluorometry to monitor conformational changes in the VSD, we found that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage-sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This two-step allosteric control over a dual-specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility, endocytosis and exocytosis. PMID:26878552

  12. Transient voltage oscillations in coils

    SciTech Connect

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated.

  13. Intermodulation electrostatic force microscopy for imaging surface photo-voltage

    SciTech Connect

    Borgani, Riccardo Forchheimer, Daniel; Thorén, Per-Anders; Haviland, David B.; Bergqvist, Jonas; Inganäs, Olle

    2014-10-06

    We demonstrate an alternative to Kelvin Probe Force Microscopy for imaging surface potential. The open-loop, single-pass technique applies a low-frequency AC voltage to the atomic force microscopy tip while driving the cantilever near its resonance frequency. Frequency mixing due to the nonlinear capacitance gives intermodulation products of the two drive frequencies near the cantilever resonance, where they are measured with high signal to noise ratio. Analysis of this intermodulation response allows for quantitative reconstruction of the contact potential difference. We derive the theory of the method, validate it with numerical simulation and a control experiment, and we demonstrate its utility for fast imaging of the surface photo-voltage on an organic photo-voltaic material.

  14. High voltage insulation of bushing for HTS power equipment

    NASA Astrophysics Data System (ADS)

    Kim, Woo-Jin; Choi, Jae-Hyeong; Kim, Sang-Hyun

    2012-12-01

    For the operation of high temperature superconducting (HTS) power equipments, it is necessary to develop insulating materials and high voltage (HV) insulation technology at cryogenic temperature of bushing. Liquid nitrogen (LN2) is an attractive dielectric liquid. Also, the polymer insulating materials are expected to be used as solid materials such as glass fiber reinforced plastic (GFRP), polytetra-fluoroethylene (PTFE, Teflon), Silicon (Si) rubber, aromatic polyamide (Nomex), EPDM/Silicon alloy compound (EPDM/Si). In this paper, the surface flashover characteristics of various insulating materials in LN2 are studied. These results are studied at both AC and impulse voltage under a non-uniform field. The use of GFRP and Teflon as insulation body for HTS bushing should be much desirable. Especially, GFRP is excellent material not only surface flashover characteristics but also mechanical characteristics at cryogenic temperature. The surface flashover is most serious problem for the shed design in LN2 and operation of superconducting equipments.

  15. Ion polarization behavior in alumina under pulsed gate bias stress

    SciTech Connect

    Liu, Yu; Diallo, Abdou Karim; Katz, Howard E.

    2015-03-16

    Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K{sup +}), sodium (Na{sup +}), and lithium (Li{sup +}), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔV{sub th}) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔV{sub th} over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔV{sub th} from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.

  16. Ion polarization behavior in alumina under pulsed gate bias stress

    NASA Astrophysics Data System (ADS)

    Liu, Yu; Diallo, Abdou Karim; Katz, Howard E.

    2015-03-01

    Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K+), sodium (Na+), and lithium (Li+), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔVth) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔVth over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔVth from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.

  17. ACS Expands Role In High School Chemistry.

    ERIC Educational Resources Information Center

    Chemical and Engineering News, 1979

    1979-01-01

    Describes some of the services and programs of special interests to high school chemistry teachers that are being provided by ACS, and meant to make ACS membership more attractive to the teachers. (GA)

  18. Electric field in an AC dielectric barrier discharge overlapped with a nanosecond pulse discharge

    NASA Astrophysics Data System (ADS)

    Goldberg, Benjamin M.; Shkurenkov, Ivan; Adamovich, Igor V.; Lempert, Walter R.

    2016-08-01

    The effect of ns discharge pulses on the AC barrier discharge in hydrogen in plane-to-plane geometry is studied using time-resolved measurements of the electric field in the plasma. The AC discharge was operated at a pressure of 300 Torr at frequencies of 500 and 1750 Hz, with ns pulses generated when the AC voltage was near zero. The electric field vector is measured by ps four-wave mixing technique, which generates coherent IR signal proportional to the square of electric field. Absolute calibration was done using an electrostatic (sub-breakdown) field applied to the discharge electrodes, when no plasma was generated. The results are compared with one-dimensional kinetic modeling of the AC discharge and the nanosecond pulse discharge, predicting behavior of both individual micro-discharges and their cumulative effect on the electric field distribution in the electrode gap, using stochastic averaging based on the experimental micro-discharge temporal probability distribution during the AC period. Time evolution of the electric field in the AC discharge without ns pulses, controlled by a superposition of random micro-discharges, exhibits a nearly ‘flat top’ distribution with the maximum near breakdown threshold, reproduced quite well by kinetic modeling. Adding ns pulse discharges on top of the AC voltage waveform changes the AC discharge behavior in a dramatic way, inducing transition from random micro-discharges to a more regular, near-1D discharge. In this case, reproducible volumetric AC breakdown is produced at a well-defined moment after each ns pulse discharge. During the reproducible AC breakdown, the electric field in the plasma exhibits a sudden drop, which coincides in time with a well-defined current pulse. This trend is also predicted by the kinetic model. Analysis of kinetic modeling predictions shows that this effect is caused by large-volume ionization and neutralization of surface charges on the dielectrics by ns discharge pulses. The present

  19. Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics.

    PubMed

    Colléaux, Florian; Ball, James M; Wöbkenberg, Paul H; Hotchkiss, Peter J; Marder, Seth R; Anthopoulos, Thomas D

    2011-08-28

    The electrical stability of low-voltage organic transistors based on phosphonic acid self-assembled monolayer (SAM) dielectrics is investigated using four different semiconductors. The threshold voltage shift in these devices shows a stretched-exponential time dependence under continuous gate bias with a relaxation time in the range of 10(3)-10(5) s, at room temperature. Differences in the bias instability of transistors based on different self-assembled monolayers and organic semiconductors suggest that charge trapping into localized states in the semiconductor is not the only mechanism responsible for the observed instability. By applying 1-5 s long programming voltage pulses of 2-3 V in amplitude, a large reversible threshold voltage shift can be produced. The retention time of the programmed state was measured to be on the order of 30 h. The combination of low voltage operation and relatively long retention times makes these devices interesting for ultra-low power memory applications.

  20. Turbulence and bias-induced flows in simple magnetized toroidal plasmas

    SciTech Connect

    Li, B.; Rogers, B. N.; Ricci, P.; Gentle, K. W.; Bhattacharjee, A.

    2011-05-15

    Turbulence and bias-induced flows in simple magnetized toroidal plasmas are explored with global three-dimensional fluid simulations, focusing on the parameters of the Helimak experiment. The simulations show that plasma turbulence and transport in the regime of interest are dominated by the ideal interchange instability. The application of a bias voltage alters the structure of the plasma potential, resulting in the equilibrium sheared flows.These bias-induced vertical flows located in the gradient region appear to reduce the radial extent of turbulent structures,and thereby lower the radial plasma transport on the low field side.

  1. Cognitive Bias in Systems Verification

    NASA Technical Reports Server (NTRS)

    Larson, Steve

    2012-01-01

    Working definition of cognitive bias: Patterns by which information is sought and interpreted that can lead to systematic errors in decisions. Cognitive bias is used in diverse fields: Economics, Politics, Intelligence, Marketing, to name a few. Attempts to ground cognitive science in physical characteristics of the cognitive apparatus exceed our knowledge. Studies based on correlations; strict cause and effect is difficult to pinpoint. Effects cited in the paper and discussed here have been replicated many times over, and appear sound. Many biases have been described, but it is still unclear whether they are all distinct. There may only be a handful of fundamental biases, which manifest in various ways. Bias can effect system verification in many ways . Overconfidence -> Questionable decisions to deploy. Availability -> Inability to conceive critical tests. Representativeness -> Overinterpretation of results. Positive Test Strategies -> Confirmation bias. Debiasing at individual level very difficult. The potential effect of bias on the verification process can be managed, but not eliminated. Worth considering at key points in the process.

  2. Observational biases for transiting planets

    NASA Astrophysics Data System (ADS)

    Kipping, David M.; Sandford, Emily

    2016-09-01

    Observational biases distort our view of nature, such that the patterns we see within a surveyed population of interest are often unrepresentative of the truth we seek. Transiting planets currently represent the most informative data set on the ensemble properties of exoplanets within 1 AU of their star. However, the transit method is inherently biased due to both geometric and detection-driven effects. In this work, we derive the overall observational biases affecting the most basic transit parameters from first principles. By assuming a trapezoidal transit and using conditional probability, we infer the expected distribution of these terms both as a joint distribution and in a marginalized form. These general analytic results provide a baseline against which to compare trends predicted by mission-tailored injection/recovery simulations and offer a simple way to correct for observational bias. Our results explain why the observed population of transiting planets displays a non-uniform impact parameter distribution, with a bias towards near-equatorial geometries. We also find that the geometric bias towards observed planets transiting near periastron is attenuated by the longer durations which occur near apoastron. Finally, we predict that the observational bias with respect to ratio-of-radii is super-quadratic, scaling as (RP/R⋆)5/2, driven by an enhanced geometric transit probability and modestly longer durations.

  3. Equivalent circuit modeling of a piezo-patch energy harvester on a thin plate with AC-DC conversion

    NASA Astrophysics Data System (ADS)

    Bayik, B.; Aghakhani, A.; Basdogan, I.; Erturk, A.

    2016-05-01

    As an alternative to beam-like structures, piezoelectric patch-based energy harvesters attached to thin plates can be readily integrated to plate-like structures in automotive, marine, and aerospace applications, in order to directly exploit structural vibration modes of the host system without mass loading and volumetric occupancy of cantilever attachments. In this paper, a multi-mode equivalent circuit model of a piezo-patch energy harvester integrated to a thin plate is developed and coupled with a standard AC-DC conversion circuit. Equivalent circuit parameters are obtained in two different ways: (1) from the modal analysis solution of a distributed-parameter analytical model and (2) from the finite-element numerical model of the harvester by accounting for two-way coupling. After the analytical modeling effort, multi-mode equivalent circuit representation of the harvester is obtained via electronic circuit simulation software SPICE. Using the SPICE software, electromechanical response of the piezoelectric energy harvester connected to linear and nonlinear circuit elements are computed. Simulation results are validated for the standard AC-AC and AC-DC configurations. For the AC input-AC output problem, voltage frequency response functions are calculated for various resistive loads, and they show excellent agreement with modal analysis-based analytical closed-form solution and with the finite-element model. For the standard ideal AC input-DC output case, a full-wave rectifier and a smoothing capacitor are added to the harvester circuit for conversion of the AC voltage to a stable DC voltage, which is also validated against an existing solution by treating the single-mode plate dynamics as a single-degree-of-freedom system.

  4. Improved Programmable High-Voltage Power Supply

    NASA Technical Reports Server (NTRS)

    Castell, Karen; Rutberg, Arthur

    1994-01-01

    Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

  5. Optical-biased modulator employing a single silicon micro-ring resonator

    NASA Astrophysics Data System (ADS)

    Yan, Siqi; Dong, Jianji; Zheng, Aoling; Yu, Yuan

    2016-06-01

    We propose and experimentally demonstrate an optical-biased modulator employing a single silicon micro-ring resonator. By adjusting optical bias, the micro-ring modulator is capable of generating several modulation formats, namely, on-off keying, binary phase shift keying and reversed on-off keying, at the speed of 0.4 Gbit/s with extinction ratio higher than 5 dB. Compared to the previous reported bias control approaches, the optical bias proposed in this study is a novel mechanism, which can be easily conducted without complicated integrated structures or redundant electrical devices. Meanwhile, optical bias can also effectively protect the vulnerable integrated silicon devices from possible damage induced by high direct current voltage.

  6. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    PubMed Central

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-01-01

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin. PMID:26911258

  7. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    DOE PAGES

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-02-25

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. As a result, we characterize the zero-bias peaks and discuss their origin.

  8. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    NASA Astrophysics Data System (ADS)

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-02-01

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.

  9. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire.

    PubMed

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A; Gu, Genda; Mason, Nadya

    2016-02-25

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires--for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi(1.33)Sb(0.67))Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.

  10. Self-Biased Inductor-less Interface Circuit for Electret-Free Electrostatic Energy Harvesters

    NASA Astrophysics Data System (ADS)

    Lefeuvre, E.; Risquez, S.; Wei, J.; Woytasik, M.; Parrain, F.

    2014-11-01

    This paper presents a simple and efficient interface circuit for electrostatic energy harvesting devices, which uses neither controlled electronic switch nor inductor. A built-in voltage multiplier enables to get bias voltages higher than the circuit output voltage, resulting in an increased power output. This interface circuit was implemented using off-the-shelf components. Its operation was validated from 1V to 14V output voltages. Measured output power ranged from 10nW to 650nW using a capacitor varying between 45pF and 155pF at 15Hz. Measurements showed that it was possible to initiate the energy conversion cycles with start-up voltages as low as 100mV.

  11. Thermally-induced voltage alteration for integrated circuit analysis

    DOEpatents

    Cole, Jr., Edward I.

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  12. Observation of electric potential in organic thin-film transistor by bias-applied hard X-ray photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Watanabe, Takeshi; Tada, Keisuke; Yasuno, Satoshi; Oji, Hiroshi; Yoshimoto, Noriyuki; Hirosawa, Ichiro

    2016-03-01

    The effect of gate voltage on electric potential in a pentacene (PEN) layer was studied by hard X-ray photoelectron spectroscopy under a bias voltage. It was observed that applying a negative gate voltage substantially increases the width of a C 1s peak. This suggested that injected and accumulated carriers in an organic thin film transistor channel modified the potential depth profile in PEN. It was also observed that the C 1s kinetic energy tends to increase monotonically with threshold voltage.

  13. Low voltage nonprimary explosive detonator

    DOEpatents

    Dinegar, Robert H.; Kirkham, John

    1982-01-01

    A low voltage, electrically actuated, nonprimary explosive detonator is disclosed wherein said detonation is achieved by means of an explosive train in which a deflagration-to-detonation transition is made to occur. The explosive train is confined within a cylindrical body and positioned adjacent to low voltage ignition means have electrical leads extending outwardly from the cylindrical confining body. Application of a low voltage current to the electrical leads ignites a self-sustained deflagration in a donor portion of the explosive train which then is made to undergo a transition to detonation further down the train.

  14. Voltage Sensors Monitor Harmful Static

    NASA Technical Reports Server (NTRS)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  15. The intentionality bias in schizophrenia.

    PubMed

    Peyroux, Elodie; Strickland, Brent; Tapiero, Isabelle; Franck, Nicolas

    2014-11-30

    The tendency to over-interpret events of daily life as resulting from voluntary or intentional actions is one of the key aspects of schizophrenia with persecutory delusions. Here, we ask whether this characteristic may emerge from the abnormal activity of a basic cognitive process found in healthy adults and children: the intentionality bias, which refers to the implicit and automatic inclination to interpret human actions as intentional (Rosset, 2008, Cognition 108, 771-780). In our experiment, patients with schizophrenia and healthy controls were shown sentences describing human actions in various linguistic contexts, and were asked to indicate whether the action was intentional or not. The results indicated that people with schizophrenia exhibited a striking bias to over attribute intentionality regardless of linguistic context, contrary to healthy controls who did not exhibit such a general intentionality bias. Moreover, this study provides some insight into the cognitive mechanisms underlying this bias: an inability to inhibit the automatic attribution of intentionality.

  16. Magnetic bearings with zero bias

    NASA Technical Reports Server (NTRS)

    Brown, Gerald V.; Grodsinsky, Carlos M.

    1991-01-01

    A magnetic bearing operating without a bias field has supported a shaft rotating at speeds up to 12,000 rpm with the usual four power supplies and with only two. A magnetic bearing is commonly operated with a bias current equal to half of the maximum current allowable in its coils. This linearizes the relation between net force and control current and improves the force slewing rate and hence the band width. The steady bias current dissipates power, even when no force is required from the bearing. The power wasted is equal to two-thirds of the power at maximum force output. Examined here is the zero bias idea. The advantages and disadvantages are noted.

  17. An ultra-stable voltage source for precision Penning-trap experiments

    NASA Astrophysics Data System (ADS)

    Böhm, Ch.; Sturm, S.; Rischka, A.; Dörr, A.; Eliseev, S.; Goncharov, M.; Höcker, M.; Ketter, J.; Köhler, F.; Marschall, D.; Martin, J.; Obieglo, D.; Repp, J.; Roux, C.; Schüssler, R. X.; Steigleder, M.; Streubel, S.; Wagner, Th.; Westermann, J.; Wieder, V.; Zirpel, R.; Melcher, J.; Blaum, K.

    2016-08-01

    An ultra-stable and low-noise 25-channel voltage source providing 0 to -100 V has been developed. It will supply stable bias potentials for Penning-trap electrodes used in high-precision experiments. The voltage source generates all its supply voltages via a specially designed transformer. Each channel can be operated either in a precision mode or can be dynamically ramped. A reference module provides reference voltages for all the channels, each of which includes a low-noise amplifier to gain a factor of 10 in the output stage. A relative voltage stability of δV / V ≈ 2 ×10-8 has been demonstrated at -89 V within about 10 min.

  18. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  19. Simultaneous distribution of AC and DC power

    DOEpatents

    Polese, Luigi Gentile

    2015-09-15

    A system and method for the transport and distribution of both AC (alternating current) power and DC (direct current) power over wiring infrastructure normally used for distributing AC power only, for example, residential and/or commercial buildings' electrical wires is disclosed and taught. The system and method permits the combining of AC and DC power sources and the simultaneous distribution of the resulting power over the same wiring. At the utilization site a complementary device permits the separation of the DC power from the AC power and their reconstruction, for use in conventional AC-only and DC-only devices.

  20. Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

    PubMed

    Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

    2016-09-14

    We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.