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Sample records for ac bias voltage

  1. Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    NASA Technical Reports Server (NTRS)

    Bandler, Simon

    2011-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

  2. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; Kelley, R.; Kilbourne, C.; Porter, F.; Sadlier, J.; Smith, S.

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  3. Bi-directional flow induced by an AC electroosmotic micropump with DC voltage bias.

    PubMed

    Islam, Nazmul; Reyna, Jairo

    2012-04-01

    This paper discusses the principle of biased alternating current electroosmosis (ACEO) and its application to move the bulk fluid in a microchannel, as an alternative to mechanical pumping methods. Previous EO-driven flow research has looked at the effect of electrode asymmetry and transverse traveling wave forms on the performance of electroosmotic pumps. This paper presents an analysis that was conducted to assess the effect of combining an AC signal with a DC (direct current) bias when generating the electric field needed to impart electroosmosis (EO) within a microchannel. The results presented here are numerical and experimental. The numerical results were generated through simulations performed using COMSOL 3.5a. Currently available theoretical models for EO flows were embedded in the software and solved numerically to evaluate the effects of channel geometry, frequency of excitation, electrode array geometry, and AC signal with a DC bias on the flow imparted on an electrically conducting fluid. Simulations of the ACEO flow driven by a constant magnitude of AC voltage over symmetric electrodes did not indicate relevant net flows. However, superimposing a DC signal over the AC signal on the same symmetric electrode array leads to a noticeable net forward flow. Moreover, changing the polarity of electrical signal creates a bi-directional flow on symmetrical electrode array. Experimental flow measurements were performed on several electrode array configurations. The mismatch between the numerical and experimental results revealed the limitations of the currently available models for the biased EO. However, they confirm that using a symmetric electrode array excited by an AC signal with a DC bias leads to a significant improvement in flow rates in comparison to the flow rates obtained in an asymmetric electrode array configuration excited just with an AC signal.

  4. Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures

    NASA Astrophysics Data System (ADS)

    Volkov, N. V.; Tarasov, A. S.; Smolyakov, D. A.; Varnakov, S. N.; Ovchinnikov, S. G.

    2015-06-01

    We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz. Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface.

  5. Electrical Effect in Silver-Point Realization Due to Cell Structure and Bias Voltage Based on Resistance Measurement Using AC and DC Bridges

    NASA Astrophysics Data System (ADS)

    Widiatmo, J. V.; Harada, K.; Yamazawa, K.; Tamba, J.; Arai, M.

    2015-08-01

    Electrical effects related to insulating leakage represent one of the major factors contributing to uncertainties in measurements using high-temperature standard platinum resistance thermometers (HTSPRTs), especially during the realization of the silver freezing point (). This work is focused on the evaluation of the differences in resistance measurements observed when using AC resistance bridges and DC resistance bridges, hereafter, termed the AC-DC differences, as the result of various electrical effects. The magnitude of the AC-DC difference in several silver-point cells is demonstrated with several HTSPRTs. The effect of the cell structure on the AC-DC difference is evaluated by exchanging some components, part by part, within a silver-point cell. Then, the effect of the bias voltage applied to the heat pipe within the silver-point furnace is evaluated. Through the analysis of the experimental results and comparison with the reports in the literature, the importance of evaluating the AC-DC difference as a means to characterize the underlying electrical effects is discussed, considering that applying a negative bias condition to the furnace with respect to the high-temperature SPRT can minimize the AC-DC difference. Concluding recommendations are proposed on the components used in silver-point cells and the application of a bias voltage to the measurement circuit to minimize the effects of the electrical leakage.

  6. AC-Induced Bias Potential Effect on Corrosion of Steels

    DTIC Science & Technology

    2009-02-05

    AC-Induced Bias Potential Effect on Corrosion of Steels J.E. Jackson, A.N. Lasseigne, D.L. Olson, and B. Mishra Feb. 5, 2009 G2MT Generation 2...UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Generation 2 Materials Technology LLC,10281 Foxfire St,Firestone,CO,80504 8...Pokhodnaya, 1991). AC Self-biasing (from RF) Model 3 Voltage waveforms at generator (Va) and target (Vb) in sinusoidally-excited rf discharge

  7. Electric-Field Instrument With Ac-Biased Corona Point

    NASA Technical Reports Server (NTRS)

    Markson, R.; Anderson, B.; Govaert, J.

    1993-01-01

    Measurements indicative of incipient lightning yield additional information. New instrument gives reliable readings. High-voltage ac bias applied to needle point through high-resistance capacitance network provides corona discharge at all times, enabling more-slowly-varying component of electrostatic potential of needle to come to equilibrium with surrounding air. High resistance of high-voltage coupling makes instrument insensitive to wind. Improved corona-point instrument expected to yield additional information assisting in safety-oriented forecasting of lighting.

  8. Liquid meniscus oscillation and drop ejection by ac voltage, pulsed dc voltage, and superimposing dc to ac voltages

    NASA Astrophysics Data System (ADS)

    Tran, Si Bui Quang; Byun, Doyoung; Nguyen, Vu Dat; Kang, Tae Sam

    2009-08-01

    The electrohydrodynamic (EHD) spraying technique has been utilized in applications such as inkjet printing and mass spectrometry technologies. In this paper, the role of electrical potential signals in jetting and on the oscillation of the meniscus is evaluated. The jetting and the meniscus oscillation behavior are experimentally investigated under ac voltage, ac voltage superimposed on dc voltage, and pulsed dc voltage. Based on this in-depth study of the meniscus behavior under various signals, the optimal signal is implemented to an EHD inkjet head for drop-on-demand operation. For applied ac voltage and ac voltage superimposed on dc voltage, the jetting phenomenon is a dynamic process due to sequential opposite sign signals. The jetting occurs at the end of the oscillation cycle, where the meniscus oscillates upward and arrives at its highest position.

  9. Ferroelectric tunneling under bias voltages

    NASA Astrophysics Data System (ADS)

    Ma, Z. J.; Chen, G.; Zhou, P.; Mei, Z. H.; Zhang, T. J.

    2017-01-01

    Theoretical investigations of ferroelectric tunneling in a SrRuO3/BaTiO3/Pt junction were conducted, and critical expressions for the surface charge density in the electrodes and the potential distribution across the tunnel junction were derived. It was found that the screening charges associated with the ferroelectric polarization and the charging effect of the capacitor jointly contribute to the charges in the electrodes. A current-voltage study simulating the ‘read’ operation indicated that the tunneling electroresistance effect increases with the ferroelectric thickness, and the tunneling electroresistance values agree well with experimental results.

  10. Numerical study of dc-biased ac-electrokinetic flow over symmetrical electrodes

    PubMed Central

    Yang Ng, Wee; Ramos, Antonio; Cheong Lam, Yee; Rodriguez, Isabel

    2012-01-01

    This paper presents a numerical study of DC-biased AC-electrokinetic (DC-biased ACEK) flow over a pair of symmetrical electrodes. The flow mechanism is based on a transverse conductivity gradient created through incipient Faradaic reactions occurring at the electrodes when a DC-bias is applied. The DC biased AC electric field acting on this gradient generates a fluid flow in the form of vortexes. To understand more in depth the DC-biased ACEK flow mechanism, a phenomenological model is developed to study the effects of voltage, conductivity ratio, channel width, depth, and aspect ratio on the induced flow characteristics. It was found that flow velocity on the order of mm/s can be produced at higher voltage and conductivity ratio. Such rapid flow velocity is one of the highest reported in microsystems technology using electrokinetics. PMID:22662084

  11. Basic concepts of induced AC voltages on pipelines

    SciTech Connect

    Kirkpatrick, E.L.

    1995-07-01

    The phenomena of induced AC on pipelines sharing common rights-of-way with overhead high-voltage electrical transmission power lines is discussed. Basic concepts and techniques for personnel safety and some pipeline protective measures are reviewed.

  12. Dc to ac converter operates efficiently at low input voltages

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Self-oscillating dc to ac converter with transistor switching to produce a square wave output is used for low and high voltage power sources. The converter has a high efficiency throughout a wide range of loads.

  13. Electron Temperature Measurement by Floating Probe Method Using AC Voltage

    NASA Astrophysics Data System (ADS)

    Satoshi, Nodomi; Shuichi, Sato; Mikio, Ohuchi

    2016-11-01

    This study presents a novel floating probe method to measure electron temperatures using a hollow cathode-type discharge tube. The proposed method detects a shift in the floating potential when an AC voltage is applied to a probe through an intermediary blocking capacitor. The shift in the floating potential is described as a function of the electron temperature and the applied AC voltage. The floating probe method is simpler than the Langmuir probe method because it does not require the measurement of volt-ampere characteristics. As the input AC voltage increases, the electron temperature converges. The electron temperature measured using the floating probe method with an applied sinusoidal voltage shows a value close to the first (tail) electron temperature in the range of the floating potential.

  14. Ac Synchronous Servo Based On The Armature Voltage Prediction Model

    NASA Astrophysics Data System (ADS)

    Hoshino, Akihiro; Kuromaru, Hiroshi; Kobayashi, Shinichi

    1987-10-01

    A new control method of the AC synchro-nous servo-system (Brushless DC servo-system) is discussed. The new system is based on the armature voltage prediction model. Without a resolver-digital-conver-ter nor a tachometer-generator, the resolver provides following three signals to the system immediately, they are the current command, the induced voltage, and the rotor speed. The new method realizes a simple hardware configuration. Experimental results show a good performance of the system.

  15. Moderately nonlinear diffuse-charge dynamics under an ac voltage

    NASA Astrophysics Data System (ADS)

    Stout, Robert F.; Khair, Aditya S.

    2015-09-01

    The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of Vo/(kBT /e ) , where Vo is the amplitude of the driving voltage and kBT /e is the thermal voltage with kB as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D /λDL , where D is the ion diffusivity, λD is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O (Vo3) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in Vo. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing Vo. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

  16. Topologically protected loop flows in high voltage AC power grids

    NASA Astrophysics Data System (ADS)

    Coletta, T.; Delabays, R.; Adagideli, I.; Jacquod, Ph

    2016-10-01

    Geographical features such as mountain ranges or big lakes and inland seas often result in large closed loops in high voltage AC power grids. Sizable circulating power flows have been recorded around such loops, which take up transmission line capacity and dissipate but do not deliver electric power. Power flows in high voltage AC transmission grids are dominantly governed by voltage angle differences between connected buses, much in the same way as Josephson currents depend on phase differences between tunnel-coupled superconductors. From this previously overlooked similarity we argue here that circulating power flows in AC power grids are analogous to supercurrents flowing in superconducting rings and in rings of Josephson junctions. We investigate how circulating power flows can be created and how they behave in the presence of ohmic dissipation. We show how changing operating conditions may generate them, how significantly more power is ohmically dissipated in their presence and how they are topologically protected, even in the presence of dissipation, so that they persist when operating conditions are returned to their original values. We identify three mechanisms for creating circulating power flows, (i) by loss of stability of the equilibrium state carrying no circulating loop flow, (ii) by tripping of a line traversing a large loop in the network and (iii) by reclosing a loop that tripped or was open earlier. Because voltages are uniquely defined, circulating power flows can take on only discrete values, much in the same way as circulation around vortices is quantized in superfluids.

  17. Reliable 100 kbps low-voltage ac powerline communications

    NASA Astrophysics Data System (ADS)

    Ladas, Chris; Propp, Michael

    1995-12-01

    Achieving reliable, 100 kbps powerline communications on the low voltage, AC powerlines has been realized by combining new techniques in spread spectrum technology with a robust, powerline specific protocol. This approach enables reliable, high speed data networking on the electrically hostile, low voltage powerline. Applications for the new technology include utility DA/DSM (distribution automation/demand side management), intraoffice LANs, powerline based telephony, and industrial data networking applications. This technological advancement was made possible through statistical modeling of the low voltage powerline, and developing unique spread spectrum and protocol techniques specific to the resulting powerline environment. The technology has been implemented as a highly integrated, CMOS chip set, allowing straightforward integration into OEM systems and products.

  18. Key comparison CCEM-K7: AC voltage ratio

    NASA Astrophysics Data System (ADS)

    Robinson, Ian; Belliss, Janet; Bryant, Stephen; Sánchez, Antonio; Álvarez, Yolanda; Schweiger, Kurt; Díaz, Carlos; Neira, Miguel; Callegaro, Luca; Lee, Rae Duk; Blanc, Isabelle; Overney, Frederic; He, XiaoBing; Ding, Cheng; Qian, ZhongTai; Waltrip, Bryan; Small, Greig; Fiander, John; Coogan, Peter; Johnson, Heather Leigh; Nakamura, Yasuhiro; Dierikx, Erik; Kishore Saxena, Anil; Saleem, Mohd; Wood, Barry; Ramm, Guenther; Eklund, Gunnar; Turhan, Enis; Semenov, Yuri

    2012-01-01

    We report the results of the international comparison of low-frequency ac voltage ratio: CCEM-K7. The participants made measurements of a unique travelling standard: an inductive voltage divider which provided the 20 ac voltage ratios chosen for the comparison. The nominal ratios chosen were: 0.1 to 0.9, 0.01 and 1/11 to 10/11. Each of the 17 participants measured the in-phase and quadrature components of all 20 ratios at a frequency of 1 kHz, and 7 laboratories made additional, optional, measurements at a frequency of 55 Hz. The report consists of two separate parts: the first part describes the comparison and provides detailed uncertainty budgets for each participant; the second part describes the method used to analyse the results, gives the results of the comparison and tabulates the raw data provided by each participant. Main text. To reach the main text of this paper, click on Final Report (a zip file containing the report as two pdf files: Part 1 and Part 2). Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  19. Strongly nonlinear dynamics of electrolytes in large ac voltages

    NASA Astrophysics Data System (ADS)

    Højgaard Olesen, Laurits; Bazant, Martin Z.; Bruus, Henrik

    2010-07-01

    We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two features—significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of “ac capacitive desalination” since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and collapse of space-charge layers, even in the absence of any net Faradaic current through the cell. We also predict that steric effects of finite ion sizes (going beyond dilute-solution theory) act to suppress the strongly nonlinear regime in the limit of concentrated electrolytes, ionic liquids, and molten salts. Beyond the model problem, our reduced equations for thin double layers, based on uniformly valid matched asymptotic expansions, provide a useful mathematical framework to describe additional nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena.

  20. A voltage biased superconducting quantum interference device bootstrap circuit

    NASA Astrophysics Data System (ADS)

    Xie, Xiaoming; Zhang, Yi; Wang, Huiwu; Wang, Yongliang; Mück, Michael; Dong, Hui; Krause, Hans-Joachim; Braginski, Alex I.; Offenhäusser, Andreas; Jiang, Mianheng

    2010-06-01

    We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ0 Hz - 1/2 and a magnetic field resolution of less than 3 fT Hz - 1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

  1. Performance of TES X-ray Microcalorimeters with AC Bias Read-Out at MHz Frequencies

    NASA Astrophysics Data System (ADS)

    Akamatsu, H.; Gottardi, L.; Adams, J.; Bandler, S.; Bruijn, M.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; den Hartog, R.; Hoevers, H.; Kelley, R.; Kilbourne, C.; van der Kuur, J.; van den Linden, A. J.; Porter, F.; Sadleir, J.; Smith, S.; Kiviranta, M.

    2014-08-01

    At SRON we are developing Frequency Domain Multiplexing for the read-out of superconducting transition edge sensor microcalorimeters for future X-ray astrophysical missions. We will report on the performance of Goddard Space Flight Center pixels under AC bias in the MHz frequency range. Superconducting flux transformers are used to improve the impedance matching between the low ohmic TESs and the SQUID. We connected 5 pixels to the LC filters with resonant frequencies ranging between 1 and 5 MHz. For X-ray photons of 6 keV we measured a best X-ray energy resolution of 3.6 eV at 1.4 MHz, consistent with the integrated Noise Equivalent Power. In addition, we improved the electrical circuit by optimizing the coupling ratio of the impedance matching transformer. In addition, we improved electrical circuit for impedance matching; modified transformer coupling ratio. As a result, we got the integrated noise equivalent power resolution of 2.7 eV at 2.5 MHz. A characterization of the detector response as a function of the AC bias voltage, bias frequency and the applied magnetic field is presented.

  2. Antenna-coupled arrays of voltage-biased superconducting bolometers

    SciTech Connect

    Myers, Michael J.; Lee, Adrian T.; Richards, P.L.; Schwan, D.; Skidmore, J.T.; Smith, A.D.; Spieler, H.; Yoon, Jongsoo

    2001-07-23

    We report on the development of antenna-coupled Voltage-biased Superconducting Bolometers (VSBs) which use Transition-edge Sensors (TES). Antenna coupling can greatly simplify the fabrication of large multi-frequency bolometer arrays compared to horn-coupled techniques. This simplification can make it practical to implement 1000+ element arrays that fill the focal plane of mm/sub-mm wave telescopes. We have designed a prototype device with a double-slot dipole antenna, integrated band-defining filters, and a membrane-suspended bolometer. A test chip has been constructed and will be tested shortly.

  3. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    NASA Astrophysics Data System (ADS)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2015-02-01

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al2O3 and Al2O3/HfO2 stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 1012 cm-2 and 0.7 × 1012 cm-2 are determined for Al2O3 layers without and with an ultra-thin HfO2 interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 1010 eV-1 cm-2 for the Al2O3 sample with HfO2 interface.

  4. Focal Plane Arrays of Voltage-Biased Superconducting Bolometers

    NASA Technical Reports Server (NTRS)

    Myers, Michael J.; Clarke, John; Gildemeister, J. M.; Lee, Adrian T.; Richards, P. L.; Schwan, Dan; Skidmore, J. T.; Spieler, Helmuth; Yoon, Jongsoo

    2001-01-01

    The 200-micrometer to 3-mm wavelength range has great astronomical and cosmological significance. Science goals include characterization of the cosmic microwave background, measurement of the Sunyaev-Zel'dovich effect in galaxy clusters, and observations of forming galaxies. Cryogenic bolometers are the most sensitive broadband detectors in this frequency range. Because single bolometer pixels are reaching the photon noise limit for many observations, the development of large arrays will be critical for future science progress. Voltage-biased superconducting bolometers (VSBs) have several advantages compared to other cryogenic bolometers. Their strong negative electrothermal feedback enhances their linearity, speed, and stability. The large noise margin of the SQUID readout enables multiplexed readout schemes, which are necessary for developing large arrays. In this paper, we discuss the development of a large absorber-coupled array, a frequency-domain SQUID readout multiplexer, and an antenna-coupled VSB design.

  5. Interface circuit with adjustable bias voltage enabling maximum power point tracking of capacitive energy harvesting devices

    NASA Astrophysics Data System (ADS)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2016-12-01

    The operation analysis of a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage is carried out in this paper. Two configurations determined by the open or closed states of an electronic switch are examined. The increase of the voltage across a biasing capacitor, occurring when the switch is open, is proved theoretically and experimentally. With the decrease of this biasing voltage which occurs naturally when the switch is closed due to imperfections of the circuit, the bias voltage can be maintained close to a target value by appropriate ON and OFF control of the switch. As the energy converted by the variable capacitor on each cycle depends on the bias voltage, this energy can be therefore accurately controlled. This feature opens up promising perspectives for optimization the power harvested by electrostatic devices. Simulation results with and without electromechanical coupling effect are presented. In experimental tests, a simple switch control enabling to stabilize the bias voltage is described.

  6. High ac-voltage sensitivity of a quartz needle sensor used in noncontact scanning force microscopy

    NASA Astrophysics Data System (ADS)

    Hartmann, C.; Mertin, W.; Bacher, G.

    2005-11-01

    The ac-voltage sensitivity of a needle sensor used in a scanning force microscope has been investigated. The voltage sensitivity varies depending if the needle sensor is used as an active or passive device. Using it as an active device, we achieve a voltage sensitivity down to 100μV if the frequency and phase of the excitation voltage of the needle sensor is matched to the voltage of the device under test.

  7. Regular structures in 5CB liquid crystals under the joint action of ac and dc voltages

    NASA Astrophysics Data System (ADS)

    Aguirre, Luis E.; Anoardo, Esteban; Éber, Nándor; Buka, Ágnes

    2012-04-01

    A nematic liquid crystal with high, positive dielectric anisotropy (5CB) has been studied under the influence of the combined action of a dc and an ac electric field. Broad frequency, voltage, and cell thickness ranges were considered. Pattern morphologies were identified; the thresholds and critical wave numbers were measured and analyzed as a function of frequency, dc-to-ac voltage ratio, and thickness. The current-voltage characteristics were simultaneously detected.

  8. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    SciTech Connect

    Jordan, Paul M. Simon, Daniel K.; Dirnstorfer, Ingo; Mikolajick, Thomas

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  9. Single SQUID multiplexer for arrays of voltage-biased superconducting bolometers

    SciTech Connect

    Yoon, Jongsoo; Clarke, John; Gildemeister, J.M.; Lee, Adrian T.; Myers, M.J.; Richards, P.L.; Skidmore, J.T.; Spieler, H.G.

    2001-08-20

    We describe a frequency domain superconducting quantum interference device (SQUID) multiplexer which monitors a row of low-temperature sensors simultaneously with a single SQUID. Each sensor is ac biased with a unique frequency and all the sensor currents are added in a superconducting summing loop. A single SQUID measures the current in the summing loop, and the individual signals are lock-in detected after the room temperature SQUID electronics. The current in the summing loop is nulled by feedback to eliminate direct crosstalk. In order to avoid the accumulation of Johnson noise in the summing loop, a tuned bandpass filter is inserted in series with each sensor. For a 32-channel multiplexer for Voltage-biased Superconducting Bolometer (VSB) with a time constant {approx}1msec, we estimate that bias frequencies in the range from {approx}500kHz to {approx}600kHz are practical. The major limitation of our multiplexing scheme is in the slew rate of a readout SQUID. We discuss a ''carrier nulling'' technique which could be used to increase the number of sensors in a row or to multiplex faster bolometers by reducing the required slew rate for a readout SQUID.

  10. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    NASA Astrophysics Data System (ADS)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+-434.81 nm and Ar+-442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m-3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  11. Thermally biased AC electrokinetic pumping effect for lab-on-a-chip based delivery of biofluids.

    PubMed

    Yuan, Quan; Wu, Jie

    2013-02-01

    One major motivation for microfluidic research is to develop point of care diagnostic tools, which often demands a solution for chip-scale pumping that is of low cost, small size and light weight. Electrokinetics has been extensively studied for disposable pumping since only electrodes are needed to induce microflows. However, it encounters difficulties with conductive biofluids because of the associated high salt content. In electrokinetic pumps, electrodes are in direct contact with fluid, so high salt content will compress the electric double layer that is essential to electroosmostic flows. Alternating current electrothermal (ACET) effect is the only electrokinetic method found viable for biofluid actuation. While high frequency (>10 kHz) operation can suppress electrochemical reactions, electrical potential that could be applied over biofluids is still limited within several volts due to risk of electrolysis or impedance mismatch. Since ACET flow velocity has a quartic dependence on the voltage, ACET flows would be rather slow if electric field alone is used for actuation. This work studies the effect of a thermal bias on enhancing AC electrokinetic pumping. With proper imposition of external thermal gradients, significant improvement in flow velocity has been demonstrated by numerical simulation and preliminary experiments. Both showed that with 4 V(rms) at 100 kHz, flow velocity increased from ~10 μm/s when there was no thermal biasing to ~112 μm/s when a heat flux was applied.

  12. Synchronized dynamics of Josephson vortices in artificial stacks of SNS Josephson junctions under both dc and ac bias currents

    NASA Astrophysics Data System (ADS)

    Berdiyorov, G. R.; Savel'ev, S. E.; Milošević, M. V.; Kusmartsev, F. V.; Peeters, F. M.

    2013-05-01

    Nonlinear dynamics of Josephson vortices (fluxons) in artificial stacks of superconducting-normal-superconducting Josephson junctions under simultaneously applied time-periodic ac and constant biasing dc currents is studied using the time dependent Ginzburg-Landau formalism with a Lawrence-Doniach extension. At zero external magnetic field and dc biasing current the resistive state of the system is characterized by periodic nucleation and annihilation of fluxon-antifluxon pairs, relative positions of which are determined by the state of neighboring junctions. Due to the mutual repulsive interaction, fluxons in different junctions move out of phase. Their collective motion can be synchronized by adding a small ac component to the biasing dc current. Coherent motion of fluxons is observed for a broad frequency range of the applied drive. In the coherent state the maximal output voltage, which is proportional to the number of junctions in the stack, is observed near the characteristic frequency of the system determined by the crossing of the fluxons across the sample. However, in this frequency range the dynamically synchronized state has an alternative—a less ordered state with smaller amplitude of the output voltage. Collective behavior of the junctions is strongly affected by the sloped sidewalls of the stack. Synchronization is observed only for weakly trapezoidal cross sections, whereas irregular motion of fluxons is observed for larger slopes of the sample edge.

  13. Electrical biasing and voltage contrast imaging in a focused ion beam system

    SciTech Connect

    Campbell, A.N.; Soden, J.M.; Rife, J.L.; Lee, R.G.

    1995-09-01

    We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of their application to the failure analysis of complex ICs. We discuss the necessary changes in system operating parameters to perform biased voltage contrast imaging.

  14. Phase-sensitive detection of both inductive and non-inductive ac voltages in ferromagnetic resonance

    NASA Astrophysics Data System (ADS)

    Weiler, Mathias; Shaw, Justin M.; Nembach, Hans T.; Schoen, Martin A.; Boone, Carl T.; Silva, Thomas J.

    2014-03-01

    Spin pumping causes significant damping in ultrathin ferromagnetic/normal metal (NM) multilayers via spin-current generation of both dc and ac character in the NM system. While the nonlinear dc component has been investigated in detail by utilization of the inverse spin Hall effect (iSHE) in NMs, much less is known about the linear ac component that is presumably much larger in the small-excitation limit. We measured generated ac voltages in a wide variety of Permalloy/NM multilayers via vector-network-analyzer ferromagnetic resonance. We employ a custom, impedance-matched, broadband microwave coupler that features a ferromagnetic thin film reference resonator to accurately compare ac voltage amplitudes and phases between varieties of multilayers. By use of the fact that inductive and ac iSHE signals are phase-shifted by π/2, we find that inductive signals are major contributors in all investigated samples. It is only by comparison of the phase and amplitude of the recorded ac voltages between multiple samples that we can extract the non-inductive contributions due to spin-currents. Voltages due to the ac iSHE in Permalloy(10nm)/platinum(5nm) bilayers are weaker than inductive signals, in agreement with calculations based upon recent theoretical predictions. M.W. acknowledges financial support by the German Academic Exchange service (DAAD).

  15. Mechanism of electrohydrodynamic printing based on ac voltage without a nozzle electrode

    NASA Astrophysics Data System (ADS)

    Nguyen, Vu Dat; Byun, Doyoung

    2009-04-01

    The electrohydrodynamic (EHD) spraying technique has been applied to inkjet printing technology for fabrication of printed electronics. The conventional EHD inkjet device is based on dc voltage and requires two electrodes: a nozzle electrode and an extractor electrode. This study notes several drawbacks of the dc-based EHD printing device such as electrical breakdown and demonstrates stable jetting by using the extractor electrode alone without the nozzle electrode and ac voltage. The continuous ejection of droplets can be obtained only by ac voltage, showing consistent ejection at every peak of electrical signal. The suggested EHD inkjet device prevents electrical breakdown.

  16. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    NASA Astrophysics Data System (ADS)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  17. New internal multi-range resistors for ac voltage calibration by using TVC

    NASA Astrophysics Data System (ADS)

    Ali, Rasha S. M.

    2015-10-01

    Accurate calibration of ac voltages up to 1000 V by using thermal converters requires range resistors connected in series with the converter. The combination of a thermal converter and range resistor is known as the thermal voltage converter. In this paper, multi-range internal range resistors are designed and implemented in the National Institute for Standards (NIS), Egypt to cover the ac voltage ranges from 10 V to 750 V. The range resistor values are 2 kΩ, 10 kΩ, 20 kΩ, 40 kΩ, 100 kΩ, and 150 kΩ to cover the voltage ranges 10 V, 50 V, 100 V, 200 V, 500 V, and 750 V, respectively. The six range resistors are mounted in series with a single-junction thermo-element in the same box to provide a new thermal voltage converter. The required range resistor is selected by using a six-pin selector switch. Each resistor is connected to a selector pin. The new thermal voltage converter ranges are automatically calibrated against other standard thermal voltage converters at different frequencies by using a LabVIEW program to determine their ac-dc transfer difference at each range. The expanded uncertainties are estimated according to the GUM for all ranges at different frequencies. The performance of the new thermal voltage converter is also evaluated by comparing its ac-dc differences and its accuracy in measuring the ac voltage at different frequencies with a traditional thermal voltage converter.

  18. A Generalised Fault Protection Structure Proposed for Uni-grounded Low-Voltage AC Microgrids

    NASA Astrophysics Data System (ADS)

    Bui, Duong Minh; Chen, Shi-Lin; Lien, Keng-Yu; Jiang, Jheng-Lun

    2016-04-01

    This paper presents three main configurations of uni-grounded low-voltage AC microgrids. Transient situations of a uni-grounded low-voltage (LV) AC microgrid (MG) are simulated through various fault tests and operation transition tests between grid-connected and islanded modes. Based on transient simulation results, available fault protection methods are proposed for main and back-up protection of a uni-grounded AC microgrid. In addition, concept of a generalised fault protection structure of uni-grounded LVAC MGs is mentioned in the paper. As a result, main contributions of the paper are: (i) definition of different uni-grounded LVAC MG configurations; (ii) analysing transient responses of a uni-grounded LVAC microgrid through line-to-line faults, line-to-ground faults, three-phase faults and a microgrid operation transition test, (iii) proposing available fault protection methods for uni-grounded microgrids, such as: non-directional or directional overcurrent protection, under/over voltage protection, differential current protection, voltage-restrained overcurrent protection, and other fault protection principles not based on phase currents and voltages (e.g. total harmonic distortion detection of currents and voltages, using sequence components of current and voltage, 3I0 or 3V0 components), and (iv) developing a generalised fault protection structure with six individual protection zones to be suitable for different uni-grounded AC MG configurations.

  19. Abnormal degradation of high-voltage p-type MOSFET with n+ polycrystalline silicon gate during AC stress

    NASA Astrophysics Data System (ADS)

    Lee, Dongjun; Joo, Ikhyung; Lee, Changsub; Song, Duheon; Choi, Byoungdeog

    2016-11-01

    We investigated the abnormal degradation of high-voltage p-type MOSFET (HV pMOSFET) under negative AC gate bias stress. In HV pMOSFET with n+ polycrystalline silicon (poly-Si) gate, the abnormal degradation occurs after the gradual degradation during negative AC stress. The abnormal degradation is suppressed by changing the gate material from n+ poly-Si to p+ poly-Si, and it is caused by hot holes produced by the impact ionization near the surface when electrons move from the gate toward the gate oxide. We suggest a possible mechanism to explain the improvement of degradation by using p+ poly-Si as a gate material.

  20. Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

    NASA Astrophysics Data System (ADS)

    E, Lotfi; H, Rezania; B, Arghavaninia; M, Yarmohammadi

    2016-07-01

    We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

  1. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOEpatents

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  2. Methods for high-voltage bias testing of PV modules in hot and humid climate

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.; Pethe, Shirish A.; Kaul, Ashwani

    2011-09-01

    The accelerated tests currently carried out on PV modules reduce the infant mortality as well as improve the production techniques during the manufacture of PV modules. However, the accelerated tests do not completely duplicate the real world operating conditions of PV modules. Hence it is essential to deploy PV modules in the field for extended periods in order to estimate the degradation, if any, as well as to elucidate the degradation mechanisms. Moreover, PV modules should be tested by specially designed tests in harsh climates. At Florida Solar Energy Center (FSEC) high-voltage bias testing of PV modules was carried out in hot and humid climate with the individual modules biased at +/- 600 V. It was observed that the leakage currents flowing from the PV circuit to the ground is directly proportional to the bias voltage. PV systems with maximum voltage of 1000 V are installed in Europe and elsewhere which means higher leakage currents will be produced in the PV modules. Based on this fact and the earlier observations, high voltage bias testing of c-Si PV modules specially designed for high voltage operation was carried out in hot and humid climate with the individual modules biased at +/-1500 V at FSEC and higher. This paper provides results of high voltage bias testing of PV modules. The results indicate that the test can be considered as reliable metric in determination of the long term performance of PV modules.

  3. The effect of bias voltage on the morphology and wettability of plasma deposited titanium oxide films

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Li, Yan; Guo, Kai; Zhang, Jing

    2008-02-01

    Hydrophobic and hydrophilic films with titanium oxide inside were grown by radio frequency plasma enhanced chemical vapor deposition (RF--PECVD) on glass substrates. Bias voltage was used as an assistant for the deposition process. And a comparison was made between with and without the bias voltage. Titanium tetraisopropoxide (TTIP-Ti (OC 3H 7) 4) was used as the precursor compound. Film wettability was tested by water contact angle measurement (CAM). The water contact angle (WAC) of the film deposited in plasma without biased voltage was greater than 145°, while the WAC of the film deposited in plasma with biased voltage was less than 30°. The morphology of the deposited films was observed by scanning electron microscope (SEM). It is found that the films grown without bias voltage were covered with lots of nano grain and pores, but the surface of the films deposition with bias voltage was much dense. The chemical structure and property of the deposited films were analyzed by Fourier-transformed infrared spectroscopy (FTIR), while the plasma phase was investigated by optical emission spectroscopy (OES).

  4. Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

    2017-04-01

    Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

  5. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    SciTech Connect

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  6. Development of Low-Frequency AC Voltage Measurement System Using Single-Junction Thermal Converter

    NASA Astrophysics Data System (ADS)

    Amagai, Yasutaka; Nakamura, Yasuhiro

    Accurate measurement of low-frequency AC voltage using a digital multimeter at frequencies of 4-200Hz is a challenge in the mechanical engineering industry. At the National Metrology Institute of Japan, we developed a low-frequency AC voltage measurement system for calibrating digital multimeters operating at frequencies down to 1 Hz. The system uses a single-junction thermal converter and employs a theoretical model and a three-parameter sine wave fitting algorithm based on the least-square (LS) method. We calibrated the AC voltage down to 1Hz using our measurement system and reduced the measurement time compared with that using thin-film thermal converters. Our measurement results are verified by comparison with those of a digital sampling method using a high-resolution analog-to-digital converter; our data are in agreement to within a few parts in 105. Our proposed method enables us to measure AC voltage with an uncertainty of 25 μV/V (k = 1) at frequencies down to 4 Hz and a voltage of 10 V.

  7. Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

    NASA Astrophysics Data System (ADS)

    Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

    We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

  8. A near infrared organic photodiode with gain at low bias voltage

    SciTech Connect

    Campbell, Ian H; Crone, Brian K

    2009-01-01

    We demonstrate an organic photodiode with near infrared optical response out to about 1100 run with a gain of {approx}10 at 1000 run under 5V reverse bias. The diodes employ a soluble naphthalocyanine with a peak absorption coefficient of {approx}10{sup 5} cm{sup -1} at 1000 nm. In contrast to most organic photodiodes, no exciton dissociating material is used. At zero bias, the diodes are inefficient with an external quantum efficiency of {approx} 10{sup -2}. In reverse bias, large gain occurs and is linear with bias voltage above 4V. The observed gain is consistent with a photoconductive gain mechanism.

  9. AC electrical transport properties and current-voltage hysteresis behavior of PVA-CNT nanocomposite film

    NASA Astrophysics Data System (ADS)

    Das, Amit Kumar; Sinha, Subhojyoti; Meikap, Ajit Kumar

    2015-06-01

    Polyvinyl alcohol (PVA) - Carbon nanotube (CNT) composite has been prepared and its electric modulus, ac conductivity, impedance spectroscopy and current-voltage characteristics have been studied, at and above room temperature, to understand the prevailing charge transport mechanism. Non-Debye type relaxation behavior was observed with activation energy of 1.27 eV whereas correlated barrier hopping was found to be the dominant charge transport mechanism with maximum barrier height of 48.7 meV above room temperature. The sample, under ±80 V applied voltage, exhibits hysteresis behavior in its current - voltage characteristics.

  10. Influence of substrate bias voltage on the microstructure of nc-SiOx:H film

    NASA Astrophysics Data System (ADS)

    Li, Hui-Min; Yu, Wei; Xu, Yan-Mei; Ji, Yun; Jiang, Zhao-Yi; Wang, Xin-Zhan; Li, Xiao-Wei; Fu, Guang-Sheng

    2015-02-01

    Amorphous silicon oxide containing nanocrystalline silicon grain (nc-SiOx:H) films are prepared by a plasma-enhanced chemical vapor deposition technique at different negative substrate bias voltages. The influence of the bias voltage applied to the substrate on the microstructure is investigated. The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si. The grain size can be well controlled by varying the substrate bias voltage, and the largest size is obtained at 60 V. Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiOx:H films suggest that the absorption peak intensities, which are related to the defect densities, can be well controlled. It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process, which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds. Also the larger grain size and lower band gap, which will result in better photosensitivity, can also be obtained with a moderate substrate bias voltage of 60 V. Project supported by the Key Basic Research Project of Hebei Province, China (Grant No. 12963930D), the Natural Science Foundation of Hebei Province, China (Grant No. F2013201250), and the Science and Technology Research Projects of the Educational Department of Hebei Province, China (Grant No. ZH2012030).

  11. Voltage biasing, cyclic voltammetry, & electrical impedance spectroscopy for neural interfaces.

    PubMed

    Wilks, Seth J; Richner, Tom J; Brodnick, Sarah K; Kipke, Daryl R; Williams, Justin C; Otto, Kevin J

    2012-02-24

    Electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measure properties of the electrode-tissue interface without additional invasive procedures, and can be used to monitor electrode performance over the long term. EIS measures electrical impedance at multiple frequencies, and increases in impedance indicate increased glial scar formation around the device, while cyclic voltammetry measures the charge carrying capacity of the electrode, and indicates how charge is transferred at different voltage levels. As implanted electrodes age, EIS and CV data change, and electrode sites that previously recorded spiking neurons often exhibit significantly lower efficacy for neural recording. The application of a brief voltage pulse to implanted electrode arrays, known as rejuvenation, can bring back spiking activity on otherwise silent electrode sites for a period of time. Rejuvenation alters EIS and CV, and can be monitored by these complementary methods. Typically, EIS is measured daily as an indication of the tissue response at the electrode site. If spikes are absent in a channel that previously had spikes, then CV is used to determine the charge carrying capacity of the electrode site, and rejuvenation can be applied to improve the interface efficacy. CV and EIS are then repeated to check the changes at the electrode-tissue interface, and neural recordings are collected. The overall goal of rejuvenation is to extend the functional lifetime of implanted arrays.

  12. Voltage-Biased Magnetic Sensors Based on Tuned Varistors

    NASA Astrophysics Data System (ADS)

    Pandey, R. K.; Stapleton, William. A.; Sutanto, Ivan; Shamsuzzoha, M.

    2015-04-01

    In this paper, we explore the possibility of finding practical applications when the nonlinear current-voltage ( I- V) characteristics of a varistor are modified by the application of external magnetic fields. With this goal in mind, varistors based on a pseudobrookite oxide semiconductor have been studied. Pseudobrookite (PsB) is a wide bandgap n-type semiconductor with the bandgap of 2.77 eV. It is also weakly ferromagnetic. The "voltage-dependent resistor" (VDR) mode of the magnetically-tuned pseudobrookite varistors offers an opportunity to advance magnetic sensor technology. The resistive and magnetoresistive parameters of PsB VDRs exhibit good responses to applied magnetic fields and they can therefore be the basis for the fabrication of simple yet practical magnetic sensors. These sensors can cover the range of magnetic fields between 0 and 4500 Oe with good accuracy, and could possibly be considered as a substitute for Hall Effect-based sensors for many applications. Also, due to their simple structure, they would be rugged and not susceptible to abuses. They may also be suitable for applications in hazardous environments such as high temperatures and atmospheres having the presence of radiation, such as neutrons, protons, etc. It is also possible that these novel sensors could be suitable for geological applications such as in well logging in search of energy sources.

  13. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage.

    PubMed

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-10-19

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction.

  14. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    NASA Astrophysics Data System (ADS)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-10-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction.

  15. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    PubMed Central

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-01-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction. PMID:27759080

  16. Building the analytical response in frequency domain of AC biased bolometers. Application to Planck/HFI

    NASA Astrophysics Data System (ADS)

    Sauvé, Alexandre; Montier, Ludovic

    2016-12-01

    Context: Bolometers are high sensitivity detector commonly used in Infrared astronomy. The HFI instrument of the Planck satellite makes extensive use of them, but after the satellite launch two electronic related problems revealed critical. First an unexpected excess response of detectors at low optical excitation frequency for ν < 1 Hz, and secondly the Analog To digital Converter (ADC) component had been insufficiently characterized on-ground. These two problems require an exquisite knowledge of detector response. However bolometers have highly nonlinear characteristics, coming from their electrical and thermal coupling making them very difficult to model. Goal: We present a method to build the analytical transfer function in frequency domain which describe the voltage response of an Alternative Current (AC) biased bolometer to optical excitation, based on the standard bolometer model. This model is built using the setup of the Planck/HFI instrument and offers the major improvement of being based on a physical model rather than the currently in use had-hoc model based on Direct Current (DC) bolometer theory. Method: The analytical transfer function expression will be presented in matrix form. For this purpose, we build linearized versions of the bolometer electro thermal equilibrium. A custom description of signals in frequency is used to solve the problem with linear algebra. The model performances is validated using time domain simulations. Results: The provided expression is suitable for calibration and data processing. It can also be used to provide constraints for fitting optical transfer function using real data from steady state electronic response and optical response. The accurate description of electronic response can also be used to improve the ADC nonlinearity correction for quickly varying optical signals.

  17. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

    PubMed Central

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm2) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode. PMID:25593550

  18. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    PubMed

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  19. Photon-assisted field emission from a Si tip at addition of an AC low voltage

    NASA Astrophysics Data System (ADS)

    Zaporozhchenko, A. V.; Chernov, S. V.; Odnodvorets, L. V.; Stetsenko, B. V.; Nepijko, S. A.; Elmers, H. J.; Schönhense, G.

    2015-07-01

    We investigated the field emission current from a p-type silicon tip with large resistivity of 4 × 103 Ω cm for light illumination with a photon energy of 1.3 eV and tip-anode voltages of 0.7-5.0 kV. Additional AC voltage with amplitude 30-60 V and frequency varying in the range of 10-107 Hz was applied to the tip which resulted in variations of emission current. We investigated the dependence of this phenomenon on the AC signal parameters, light intensity and temperature. The resonant-like frequency dependence of the emission current is because the tip acts as a driven plasmonic resonator. The results represent an important step forward for the development of high-frequency display systems based on electron field emission.

  20. Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

    SciTech Connect

    Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

    2016-11-21

    We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

  1. Voltage-biased high-{Tc} superconducting infrared bolometers with strong electrothermal feedback

    SciTech Connect

    Lee, A.T.; Gildemeister, J.M.; Lee, Shih-Fu; Richards, P.L.

    1996-08-01

    In the current generation of high-{Tc} bolometers the thermal conductance is often chosen for a short time-constant rather than for optimal sensitivity. We describe a novel bolometer bias and readout scheme that promises to relax this constraint. Voltage bias of the superconductor results in strong negative electrothermal feedback that greatly reduces the time-constant of the bolometer. We estimate that a decrease of more than one order of magnitude in time-constant should be possible with existing high-Tc thermometers. We give theoretical estimates of the performance gain with voltage bias for several bolometers that have been reported in the literature. We find cases where the sensitivity can be greatly improved (by changing the thermal conductance) while holding the time constant fixed and others where the bolometer can be made much faster while maintaining the sensitivity.

  2. Magnetic Nanoparticle Thermometer: An Investigation of Minimum Error Transmission Path and AC Bias Error

    PubMed Central

    Du, Zhongzhou; Su, Rijian; Liu, Wenzhong; Huang, Zhixing

    2015-01-01

    The signal transmission module of a magnetic nanoparticle thermometer (MNPT) was established in this study to analyze the error sources introduced during the signal flow in the hardware system. The underlying error sources that significantly affected the precision of the MNPT were determined through mathematical modeling and simulation. A transfer module path with the minimum error in the hardware system was then proposed through the analysis of the variations of the system error caused by the significant error sources when the signal flew through the signal transmission module. In addition, a system parameter, named the signal-to-AC bias ratio (i.e., the ratio between the signal and AC bias), was identified as a direct determinant of the precision of the measured temperature. The temperature error was below 0.1 K when the signal-to-AC bias ratio was higher than 80 dB, and other system errors were not considered. The temperature error was below 0.1 K in the experiments with a commercial magnetic fluid (Sample SOR-10, Ocean Nanotechnology, Springdale, AR, USA) when the hardware system of the MNPT was designed with the aforementioned method. PMID:25875188

  3. Magnetic nanoparticle thermometer: an investigation of minimum error transmission path and AC bias error.

    PubMed

    Du, Zhongzhou; Su, Rijian; Liu, Wenzhong; Huang, Zhixing

    2015-04-14

    The signal transmission module of a magnetic nanoparticle thermometer (MNPT) was established in this study to analyze the error sources introduced during the signal flow in the hardware system. The underlying error sources that significantly affected the precision of the MNPT were determined through mathematical modeling and simulation. A transfer module path with the minimum error in the hardware system was then proposed through the analysis of the variations of the system error caused by the significant error sources when the signal flew through the signal transmission module. In addition, a system parameter, named the signal-to-AC bias ratio (i.e., the ratio between the signal and AC bias), was identified as a direct determinant of the precision of the measured temperature. The temperature error was below 0.1 K when the signal-to-AC bias ratio was higher than 80 dB, and other system errors were not considered. The temperature error was below 0.1 K in the experiments with a commercial magnetic fluid (Sample SOR-10, Ocean Nanotechnology, Springdale, AR, USA) when the hardware system of the MNPT was designed with the aforementioned method.

  4. Photoresponse of resonant tunneling diode photodetectors as a function of bias voltage

    NASA Astrophysics Data System (ADS)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the photocurrent-voltage relation of resonant tunneling diode (RTD) photodetectors by means of electrooptical transport measurements. The investigated RTDs are based on an Al0.6Ga0.4As/GaAs double barrier resonant tunneling structure (RTS) with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ= 1.3 μm. Under illumination, photogenerated holes can be captured for accumulation in vicinity to the RTS and modulate the resonant tunneling current that is highly sensitive to changes in the local electrostatic potential. The resulting photocurrent-voltage relation is found to be a nonlinear function of the applied bias voltage, and governed by the interplay of the electronic transport properties of the RTS and the dynamics of photogenerated holes. Time-resolved photocurrent measurements were employed to analyze the dynamics of photogenerated holes. From the photocurrent-time traces the quantum-efficiency and mean lifetime of photogenerated holes can be separately determined. We found that the photoresponse is suppressed by a low quantum efficiency for bias voltages below V <= 1 V. In this regime, the built-in electric field prevents photogenerated holes from accumulation at the RTS. For voltages above V >1 V, the built-in field is compensated by the external bias, and η(V) takes on a constant value. In this regime, the RTD photoresponse is mainly determined by the lifetime of holes accumulated at the RTS. The lifetime is limited by thermionic carrier escape and was found to decrease exponentially with the applied bias voltage.

  5. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  6. Nonlinear control of voltage source converters in AC-DC power system.

    PubMed

    Dash, P K; Nayak, N

    2014-07-01

    This paper presents the design of a robust nonlinear controller for a parallel AC-DC power system using a Lyapunov function-based sliding mode control (LYPSMC) strategy. The inputs for the proposed control scheme are the DC voltage and reactive power errors at the converter station and the active and reactive power errors at the inverter station of the voltage-source converter-based high voltage direct current transmission (VSC-HVDC) link. The stability and robust tracking of the system parameters are ensured by applying the Lyapunov direct method. Also the gains of the sliding mode control (SMC) are made adaptive using the stability conditions of the Lyapunov function. The proposed control strategy offers invariant stability to a class of systems having modeling uncertainties due to parameter changes and exogenous inputs. Comprehensive computer simulations are carried out to verify the proposed control scheme under several system disturbances like changes in short-circuit ratio, converter parametric changes, and faults on the converter and inverter buses for single generating system connected to the power grid in a single machine infinite-bus AC-DC network and also for a 3-machine two-area power system. Furthermore, a second order super twisting sliding mode control scheme has been presented in this paper that provides a higher degree of nonlinearity than the LYPSMC and damps faster the converter and inverter voltage and power oscillations.

  7. An Approach to Suppressing Both Shaft Voltage and Leakage Current in an AC Motor Driven by a Voltage-Source PWM Inverter

    NASA Astrophysics Data System (ADS)

    Doumoto, Takafumi; Akagi, Hirofumi

    This paper proposes a practical approach to suppressing both shaft voltage and leakage current in an ac motor driven by a voltage-source PWM inverter. This approach is characterized by using a neutral line of the ac motor. A common-mode inductor is connected between the inverter and the motor. Moreover, a resistor and a capacitor are connected in series between the motor neutral point and the inverter negative dc bus. This unique circuit configuration makes the common-mode inductor effective in reducing the common-mode voltage appearing at the motor terminals. As a result, both shaft voltage and ground current are significantly suppressed with low cost. Over-voltages at the end of a cable can be suppressed by a normal-mode inductor and a resistor which are connected in parallel. The validity and effectiveness of the new approach are verified by experimental results from a 5-kVA laboratory system.

  8. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  9. Induced Voltage Behavior on Pipelines Due to HV AC Interference: Effective Length Concept

    NASA Astrophysics Data System (ADS)

    Nassereddine, Mohamad; Rizk, Jamal; Nagrial, Mahmood; Hellany, Ali

    2015-04-01

    High-voltage infrastructure upgrade is expending due to the growth in populations. To save on easement cost and to reduce the environmental impact of these projects, HV transmission lines occupy the same easement as pipelines in many cases. This joint easement introduces the AC interference between transmission lines and pipelines. The induced voltage can reach a limit which will jeopardize the human safety. The cited research studies the induced voltage under the presence of the overhead earth wire (OHEW) using the shielding factor. The work in this paper studies the induced voltage using the OHEW section current along with the superposition theorem. The simulations are compared to the existing research methods. The case study along with the theoretical study discusses the advance accuracy of the proposed method over the existing shield factor used in the presence research. Furthermore, they introduce the effective length along with the effective shielding factor, which aids in computing the additional effect that the OHEW has on the induced voltage.

  10. Metrological traceability for AC High-Voltage in Inmetro up to 40 kV

    NASA Astrophysics Data System (ADS)

    Vitorio, P. C. O.; de Lima, V. R.; Borges Filho, O.; de Souza, L. A. A.; Asencios, O. W. G.

    2016-07-01

    This paper refers to a project carried out in Inmetro aiming to provide internal metrological traceability for 60 Hz AC High-Voltage up to 40 kV. It presents details about the method used, its equations and obtained results. A capacitance and tanb bridge, with a built-in current comparator, was used in combination with two standard capacitors to calibrate a standard potential transformer (PT), both in ratio and phase angle. The results obtained by Inmetro showed good agreement with PTB ones, for the same PT. The maximum estimated uncertainty was 0,0049% for ratio error and 104 μrad for phase angle error.

  11. Spin Hall voltages from a.c. and d.c. spin currents

    PubMed Central

    Wei, Dahai; Obstbaum, Martin; Ribow, Mirko; Back, Christian H.; Woltersdorf, Georg

    2014-01-01

    In spin electronics, the spin degree of freedom is used to transmit and store information. To this end the ability to create pure spin currents—that is, without net charge transfer—is essential. When the magnetization vector in a ferromagnet–normal metal junction is excited, the spin pumping effect leads to the injection of pure spin currents into the normal metal. The polarization of this spin current is time-dependent and contains a very small d.c. component. Here we show that the large a.c. component of the spin currents can be detected efficiently using the inverse spin Hall effect. The observed a.c.-inverse spin Hall voltages are one order of magnitude larger than the conventional d.c.-inverse spin Hall voltages measured on the same device. Our results demonstrate that ferromagnet–normal metal junctions are efficient sources of pure spin currents in the gigahertz frequency range. PMID:24780927

  12. Voltage Controlled Exchange Bias in a Cr2O3 based heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3, which has a voltage controlled net magnetization at the (0001) surface. Voltage control of magnetism in a Cr2O3 thin film system has presented significant challenges. In this study we explore the electric control of exchange bias in an all-thin-film system of decreasing chromia film thickness with significant implications for scalability of ultra-low power memory and logical devices. Cross-sectional HRTEM indicates that grain boundaries in the metallic bottom electrode propagate into the Cr2O3 thin film with detrimental effects on leakage currents. We address this issue via a three-step growth method for the deposition of epitaxial Pd on sapphire. The resulting microstructure of the films is analyzed by reflection high-energy electron diffraction, tunneling electron microscopy and x-ray diffraction. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  13. An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

    NASA Astrophysics Data System (ADS)

    Lee, Sin-woo; Do, Hyun-Lark

    2016-12-01

    This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

  14. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co3O4-PVA/p-Si structures

    NASA Astrophysics Data System (ADS)

    Bilkan, Çiğdem; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin; Shokrani-Havigh, Roya

    2016-11-01

    In this research a simple microwave-assisted method have been used for preparation of cobalt oxide nanostructures. The as-prepared sample has been investigated by UV-vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM). On the other hand, frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε‧, ε″) and electric modulus (M‧ and M″), loss tangent (tanδ), and ac electrical conductivity (σac) values of Al/Co3O4-PVA/p-Si structures were obtained in the wide range of frequency and voltage using capacitance (C) and conductance (G/ω) data at room temperature. The values of ε‧, ε″ and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation time and polarization effect. While the value of σ is almost constant at low frequency, increases almost as exponentially at high frequency which are corresponding to σdc and σac, respectively. The M‧ and M″ have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M‧ increase with increasing frequency, the value of M″ shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and Nss effects with increasing frequency.

  15. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

    DOEpatents

    You, Chun-Yeol; Bader, Samuel D.

    2001-01-01

    A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.

  16. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    NASA Astrophysics Data System (ADS)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  17. Voltage source ac-to-dc converters for high-power transmitters

    NASA Technical Reports Server (NTRS)

    Cormier, R.

    1990-01-01

    This work was done to optimize the design of the components used for the beam power supply, which is a component of the transmitters in the Deep Space Network (DSN). The major findings are: (1) the difference in regulation between a six-pulse and a twelve-pulse converter is at most 7 percent worse for the twelve-pulse converter; (2) the commutation overlap angle of a current source converter equals that of a voltage source converter with continuous line currents; (3) the sources of uncharacteristic harmonics are identified with SPICE simulation; (4) the use of an imperfect phase-shifting transformer for the twelve-pulse converter generates a harmonic at six times the line frequency; and (5) the assumptions usually made in analyzing converters can be relaxed with SPICE simulation. The results demonstrate the suitability of using SPICE simulation to obtain detailed performance predictions of ac-to-dc converters.

  18. Spectral response of atmospheric electric field measurements near AC high voltage power lines

    NASA Astrophysics Data System (ADS)

    Silva, H. G.; Matthews, J. C.; Wright, M. D.; Shallcross, D. E.

    2015-10-01

    To understand the influence of corona ion emission on the atmospheric electrical field, measurements were made near to two AC high voltage power lines. A JCI 131 field-mill recorded the atmospheric electric field over one year. Meteorological measurements were also taken. The data series is divided in four zones (dependent on wind direction): whole zones, Z0; zone 1, Z1; zone 2, Z2; zone 3, Z3. Z3 is the least affected by corona ion emission and for that reason it is used as a reference against Z1 and Z2, which are strongly influenced by this phenomena. Analysis was undertaken for all weather days and dry days only. The Lomb-Scargle strategy developed for unevenly spaced time-series is used to calculate the spectral response of the aforementioned zones. Only frequencies above 1 minute are considered.

  19. Novel multijunction thermal converter in planar technique for AC current, voltage, power and optical radiation measurement

    NASA Astrophysics Data System (ADS)

    Klonz, M.; Weimann, T.

    1990-05-01

    A new planar thin film design of multijunction thermocouples on a silicon chip containing a window with a SiO2-membrane for low heat conductance underneath of the thermocouples is described. It is used as the sensor for the temperature difference in a multijunction thermal converter for ac-dc transfer of electrical quantities like voltage, current and power via Joule heat in a thin film resistor. By coating the heater with an optically absorbing layer it is used as a highly sensitive radiometer transferring absorbed energy to Joule heat in the resistor. The design can easily be optimized for all different frequency applications. It offers the possibility of the mass production of transfer standards at highest level of accuracy.

  20. Application of bias voltage to tune the resonant frequency of membrane-based electroactive polymer energy harvesters

    NASA Astrophysics Data System (ADS)

    Dong, Lin; Grissom, Michael; Fisher, Frank T.

    2016-05-01

    Vibration-based energy harvesting has been widely investigated to as a means to generate low levels of electrical energy for applications such as wireless sensor networks. However, for optimal performance it is necessary to ensure that resonant frequencies of the device match the ambient vibration frequencies for maximum energy harvested. Here a novel resonant frequency tuning approach is proposed by applying a bias voltage to a pre-stretched electroactive polymer (EAP) membrane, such that the resulting changes in membrane tension can tune the device to match the environmental vibration source. First, a material model which accounts for the change in properties due to the pre-stretch of a VHB 4910 EAP membrane is presented. The effect of the bias voltage on the EAP membrane, which induces an electrostatic pressure and corresponding reduction in membrane thickness, are then determined. The FEM results from ANSYS agree well with an analytical hyperelastic model of the activation response of the EAP membrane. Lastly, through a mass-loaded circular membrane vibration model, the effective resonant frequency of the energy harvester can be determined as a function of changes in membrane tension due to the applied bias voltage. In the case of an EAP membrane, pre-stretch contributes to the pre-stretch stiffness of the system while the applied bias voltage contributes to a change in bias voltage stiffness of the membrane. Preliminary experiments verified the resonant frequencies corresponding to the bias voltages predicted from the appropriate models. The proposed bias voltage tuning approach for the EAP membrane may provide a novel tuning strategy to enable energy harvesting from various ambient vibration sources in various application environments.

  1. Air ion mobility spectra and concentrations upwind and downwind of overhead AC high voltage power lines

    NASA Astrophysics Data System (ADS)

    Wright, Matthew D.; Buckley, Alison J.; Matthews, James C.; Shallcross, Dudley E.; Henshaw, Denis L.

    2014-10-01

    Corona ions produced by high-voltage power lines (HVPLs) can alter the nearby electrical environment, potentially increasing aerosol charge levels downwind. However, there is a lack of knowledge concerning the concentration and mobility of ions from AC HVPLs and their dispersion away from the line. We present ion concentration and mobility measurements made near AC HVPLs in South-West England. Examples of typical mobility spectra are shown highlighting features commonly observed. Corona was observed during 33 of 46 measurements, at 9 of 11 sites, with positive or ‘bipolar' (both polarities) ion production commonly seen. Ion production usually increases atmospheric concentrations by only a modest amount, but extreme cases can enhance concentration by an order of magnitude or more. A polarity imbalance is required to increase aerosol charge via ion attachment; this was observed on 15 of 24 days when positive corona was observed, but was not seen for negative ions. Ion mobility was higher downwind compared with upwind for both ion polarities, but the increase was not statistically significant. Future work should focus on identifying and characterising ‘heavy-producing' HVPLs, and obtaining results in conditions which may favour negative ion production e.g. high humidity, inclement weather or during nighttime.

  2. Eliminating leakage current in voltage-controlled exchange-bias devices

    NASA Astrophysics Data System (ADS)

    Mahmood, Ather; Echtenkamp, Will; Street, Michael; Binek, Christian; Magnetic Heterostructures Team

    Manipulation of magnetism by electric field has drawn much attention due to the technological importance for low-power devices, and for understanding fundamental magnetoelectric phenomena. A manifestation of electrically controlled magnetism is voltage control of exchange bias (EB). Robust isothermal voltage control of EB was demonstrated near room temperature using a heterostructure of Co/Pd thin film and an exchange coupled single crystal of the antiferromagnetic Cr2O3 (Chromia). A major obstacle for EB in lithographically patterned Chromia based thin-film devices is to minimize the leakage currents at high electric fields (>10 kV/mm). By combining electrical measurements on patterned devices and conductive Atomic Force Microscopy of Chromia thin-films, we investigate the defects which form conducting paths impeding the application of sufficient voltage for demonstrating the isothermal EB switching in thin film heterostructures. Technological challenges in the device fabrication will be discussed. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC Abstract DMR-0820521.

  3. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    SciTech Connect

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  4. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    DOEpatents

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  5. Spectrographic analysis of bismuth-tin eutectic alloys by spark-ignited low-voltage ac-arc excitation

    NASA Technical Reports Server (NTRS)

    Huff, E. A.; Kulpa, S. J.

    1969-01-01

    Spectrographic method determines individual stainless steel components in molten bismuth-42 w/o tin eutectic to determine the solubility of Type 304 stainless steels. It utilizes the high sensitivity and precision of the spark-ignited, low-voltage ac-arc excitation of samples rendered homogeneous by dissolution.

  6. Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir-Mn Exchange Biased Single and Double Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Saito, Yoshiaki; Amano, Minoru; Nakajima, Kentaro; Takahashi, Shigeki; Sagoi, Masayuki; Inomata, Koichiro

    2000-10-01

    Dual spin-valve-type double tunnel junctions (DTJs) of Ir-Mn/CoFe/AlOx/Co90Fe10/AlOx/CoFe/Ir-Mn and spin-valve-type single tunnel junctions (STJs) of Ir-Mn/CoFe/AlOx/CoFe/Ni-Fe were fabricated using an ultrahigh vacuum sputtering system, conventional photolithography and ion-beam milling. The STJs could be fabricated with various barrier heights by changing the oxidization conditions during deposition and changing the annealing temperature after deposition, while the AlOx layer thickness remained unchanged. There was a correlation between barrier width, height estimated using Simmons’ expressions, and dc bias voltage dependence on the MR ratio. The VB dependence on the tunneling magnetoresistance (TMR) ratio was mainly related to the barrier width, and the decrease in the TMR ratio with increasing bias voltage is well explained, taking into account the spin-independent two-step tunneling via defect states in the barrier, as a main mechanism, at room temperature. Under optimized oxidization and annealing conditions, the maximum TMR ratio at a low bias voltage, and the dc bias voltage value at which the TMR ratio decreases in value by half (V1/2) were 42.4% and 952 mV in DTJs, and 49.0% and 425 mV in STJs, respectively.

  7. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    SciTech Connect

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance.

  8. Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device

    NASA Astrophysics Data System (ADS)

    Li, S. S.; Chuang, Ricky W.; Su, Y. K.; Hu, Y. M.

    2016-12-01

    The bipolar resistive switching properties of Pt/ZnO/Pt multilayer film structure were investigated in this study. The M-H curves corresponding to the Pt/ZnO/Pt bipolar resistive switching device maintained at initial, high resistance, and low resistance states were individually obtained; all of which were ferromagnetic in nature. The strength of saturation magnetization of the device separately set at low resistance state, and the initial state was found to be strongest and weakest, respectively. Photoluminescence and X-ray photoelectron results indicate the presence of oxygen vacancies in the ZnO thin film. This resistive switching behavior accompanied with ferromagnetism could be attributed to the intrinsic defects. The results clearly demonstrate that the ferromagnetic switching capability of Pt/ZnO/Pt device is critically dependent on the bias voltage administered, which potentially allows this device to have magneto-electrical device applications.

  9. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    NASA Astrophysics Data System (ADS)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  10. Reverse bias voltage testing of 8 cm x 8cm silicon solar cells

    NASA Technical Reports Server (NTRS)

    Woike, T.; Stotlar, S.; Lungu, C.

    1991-01-01

    A study is described of the reverse I-V characteristics of the largest space qualified silicon solar cells currently available (8 x 8 cm) and of reverse bias voltage (RBV) testing performed on these cells. This study includes production grade cells, both with and without cover glass. These cells span the typical output range seen in production. Initial characteristics of these cells are measured at both 28 and 60 C. These measurements show weak correlation between cell output and reverse characteristics. Analysis is presented to determine the proper conditions for RBV stress to simulate shadowing effects on a particular array design. After performing the RBV stress the characteristics of the stressed cells are remeasured. The degradation in cell performance is highly variable which exacerbates cell mismatching over time. The effect of this degradation on array lifetime is also discussed. Generalization of these results to other array configurations is also presented.

  11. Characterization of the capacitance variation of electrostatic vibration energy harvesters biased following rectangular charge-voltage diagrams

    NASA Astrophysics Data System (ADS)

    Karami, Armine; Galayko, Dimitri; Basset, Philippe

    2016-11-01

    This paper presents for the first time a method to measure the capacitance variation of electrostatic vibration energy harvesters (e-VEHs) that employ conditioning circuits implementing a biasing scheme that can be represented by a rectangular charge-voltage diagram. Given the increasing number of e-VEHs using such complex conditioning circuits and the complex dynamics that are induced from this type of biasing, a mean to assess this measurement is of primary importance for the analysis of e-VEHs. The proposed method is based on the inspection of the voltage evolution across two simple conditioning circuits implementing a rectangular charge-voltage diagrams biasing scheme. After the method is presented, it is carried out for the characterization of a state-of-the-art MEMS e-VEH.

  12. Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

    SciTech Connect

    Saito, Y. Tanamoto, T.; Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Hamaya, K.; Tezuka, N.

    2014-05-07

    Local magnetoresistance (MR) through silicon (Si) and its bias voltage (V{sub bias}) (bias current (I{sub bias})) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing V{sub bias}. This anomalous increase of local-MR as a function of V{sub bias} can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.

  13. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  14. Tuning the Effective Anisotropy in a Voltage-Susceptible Exchange-Bias Heterosystem

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    2017-03-01

    Voltage- and temperature-tuned ferromagnetic hysteresis is investigated by a superconducting quantum-interference device and Kerr magnetometry in a thin-film heterostructure of a perpendicular anisotropic Co/Pd ferromagnet exchange coupled to the magnetoelectric antiferromagnet Cr2O3 . An abrupt disappearance of exchange bias with a simultaneous more than twofold increase in coercivity is observed and interpreted as a competition between the effective anisotropy of Cr2O3 and the exchange-coupling energy between boundary magnetization and the adjacent ferromagnet. The effective anisotropy energy is given by the intrinsic anisotropy energy density multiplied by the effective volume separated from the bulk through a horizontal antiferromagnetic domain boundary. Kerr measurements show that the anisotropy of the interfacial Cr2O3 can be tuned isothermally and in the absence of an external magnetic field by application of an electric field. A generalized Meiklejohn-Bean model accounts for the change in exchange bias and coercivity as well as the asymmetric evolution of the hysteresis loop. In support of this model, the reversal of the boundary magnetization is experimentally confirmed as a contribution to the magnetic hysteresis loop.

  15. Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

    SciTech Connect

    Rajagopal, Adharsh; Williams, Spencer T.; Chueh, Chu-Chen; Jen, Alex K. -Y.

    2016-02-29

    In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH3NH3PbI3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH3NH3PbI3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiOx/CH3NH3PbI3 interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH3NH3PbI3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Moreover, this work shows that RB can alter how CH3NH3PbI3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.

  16. Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

    DOE PAGES

    Rajagopal, Adharsh; Williams, Spencer T.; Chueh, Chu-Chen; ...

    2016-02-29

    In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH3NH3PbI3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH3NH3PbI3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiOx/CH3NH3PbI3 interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH3NH3PbI3-based solar cells provided heremore » ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Moreover, this work shows that RB can alter how CH3NH3PbI3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.« less

  17. Fabrication of Superhydrophobic Fiber Coatings by DC-Biased AC-Electrospinning

    NASA Astrophysics Data System (ADS)

    Gad-El-Hak, M.; Ochanda, F. O.; Samaha, M. A.; Vahedi Tafreshi, H.; Tepper, G. C.

    2011-11-01

    Mesh-like fiber mats of polystyrene (PS) were deposited using DC-biased AC-electrospinning. Superhydrophobic surfaces with water contact angles greater than 150° and gas fraction values of up to 97% were obtained. A Rheological study was conducted on these fiber surfaces and showed a decrease in shear stress when compared with a noncoated surface (no slip), making them excellent candidates for applications requiring the reduction of skin-friction drag in submerged surfaces. We have also shown that addition of a second, low-surface energy polymer to a solution of PS can be used to control the fiber internal porosity depending on the concentration of the second polymer. Contact-angle measurements on mats consisting of porous and nonporous fibers have been used to evaluate the role of the larger spaces between the fibers and the pores on individual fibers on superhydrophobicity. Financial support from the Defense Advanced Research Projects Agency (DARPA), contract number W91CRB-10-1-0003, is acknowledged.

  18. TES-Based X-ray Microcalorimeter Performances Under AC Bias and FDM for Athena

    NASA Astrophysics Data System (ADS)

    Akamatsu, H.; Gottardi, L.; de Vries, C. P.; Adams, J. S.; Bandler, S. R.; Bruijn, M. P.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Gao, J. R.; den Herder, J.-W.; den Hartog, R.; Hoevers, H.; Kelley, R. E.; Khosropanah, P.; Kilbourne, C. A.; van der Kuur, J.; Lee, S.-J.; van den Linden, A. J.; Porter, F. S.; Ravensberg, K.; Sadleir, J. E.; Smith, S. J.; Suzuki, T.; Wassell, E. J.; Kiviranta, M.

    2016-07-01

    Athena is a European X-ray observatory, scheduled for launch in ˜ 2028. Athena will employ a high-resolution imaging spectrometer called X-ray integral field unit (X-IFU), consisting of an array of ˜ 4000 transition edge sensor (TES) microcalorimeter pixels. For the readout of X-IFU, we are developing frequency domain multiplexing, which is the baseline readout system. In this paper, we report on the performance of a TES X-ray calorimeter array fabricated at Goddard Space Flight Center (GSFC) at MHz frequencies for the baseline of X-IFU detector. During single-pixel AC bias characterization, we measured X-ray energy resolutions (at 6 keV) of about 2.9 eV at both 2.3 and 3.7 MHz. Furthermore, in the multiplexing mode, we measured X-ray energy resolutions of about 2.9 eV at 1.3 and 1.7 MHz.

  19. Recent advances in the mitigation of AC voltages occurring in pipelines located close to electric transmission lines

    SciTech Connect

    Southey, R.D.; Dawalibi, F.P. ); Vukonich, W. )

    1994-04-01

    In joint-use corridors where both pipelines and AC electric transmission lines are present, a portion of the energy contained in the electromagnetic field surrounding the electric transmission lines is captured by each pipeline, resulting in induced AC voltages which vary in magnitude throughout the length of each pipeline. During a fault on any of the transmission lines, energization of the earth by supporting structures near the fault can result in large voltages appearing locally between the earth and the steel wall of any nearby pipeline. Some form of mitigation is usually required to reduce these voltages to acceptable levels for the protection of personnel and of the pipeline itself. This paper presents a new mitigation design approach which not only reduces AC voltages effectively and economically, but also provides cathodic protection for the protected pipeline. Performance of this new mitigation method is illustrated with results from computer simulations, which show how important it is to have an accurate electrical model of the soil structure in any interference study. Results from large-scale mitigation design studies performed for ANR Pipeline Company and other gas transmission companies are presented.

  20. The Space Charge Effect on the Discharge Current in Cross-Linked Polyethylene under High AC Voltages

    NASA Astrophysics Data System (ADS)

    Kwon, Yoon-Hyeok; Hwangbo, Seung; Lee, June-Ho; Yi, Dong-Young; Han, Min-Koo

    2003-12-01

    The space charge distributions in solid dielectrics have been usually investigated by means of the pulsed electroacoustic (PEA) method. However, most previous studies have been limited to the phenomenological analysis under DC voltages. In our study, the space charge distribution in cross-linked polyethylene (XLPE) has been measured using AC voltages by means of the modified PEA method. Simultaneously, the streamer discharges in an air gap have been measured in order to investigate the relationship between space charge and discharge current, and the relationship has been adapted to the case of dielectric barrier discharge. At high AC voltages, discharge current increases to the critical point, but no further increase is exhibited over the critical voltage and the discharge pattern is resolved by the space charge. This result indicates that the frequency effect and space charge characteristics of dielectric materials are preferred to the voltage effect in the adaptation to dielectric barrier discharge. The results well explain the space charge effect on partial discharge and the dielectric barrier discharge phenomenon.

  1. Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; Blandler, S. R.; Porter, F. S.; Sadleir, J. E.; Kilbourne, C. A.; Bailey, C. N.; Finkbeiner, F. M.; Chervenak, J. A.; Adams, J. S.; Eckart, M. E.; Kelley, R. L.; Smith, S. J.; Linden, T. V. D.; Hoevers, H.; Kuur, J. V. D.; Lindeman, M.; Bruijn, M.; Hortog, R. D.; Kiviranta, M.

    2012-01-01

    In this paper we present the progress made at SRON in the read-out of GSFC x-ray transition-edge sensor (TES) micro-calorimeters in the frequency domain. The experiments reported so far, whose aim was to demonstrate an energy resolution of 2eV at 6 keV with a TES acting as a modulator, were carried out at frequencies below 700 kHz using a standard flux locked loop (FLL) SQUID read-out scheme. The TES read-out suffered from the use of sub-optimal circuit components, large parasitic inductances, low quality factor resonators and poor magnetic field shielding. We have developed a novel experimental set-up, which allows us to test several read-out schemes in a single cryogenic run. In this set-up, the TES pixels are coupled via superconducting transformers to 18 high-Q lithographic LC filters with resonant frequencies ranging between 2 and 5 MHz. The signal is amplified by a two-stage SQUID current sensor and baseband feedback is used to overcome the limited SQUID dynamic range. We study the single pixel performance as a function of TES bias frequency, voltage and perpendicular magnetic field.

  2. Cavity phenomena in mesas of cuprate high- Tc superconductors under voltage bias

    NASA Astrophysics Data System (ADS)

    Hu, Xiao; Lin, Shizeng

    2009-08-01

    Modeling a single crystal of cuprate high- Tc superconductor, such as Bi2Sr2CaCu2O8+δ , as a stack of intrinsic Josephson junctions, we formulate explicitly the cavity phenomenon of plasma oscillations and electromagnetic (EM) waves in mesas of cylindrical and annular shapes. The phase differences of the junctions are governed by the inductively coupled sine-Gordon equations, with the Neumann-type boundary condition for sample thickness much smaller than the EM wavelength, which renders the superconductor single crystal a cavity. Biasing a dc voltage in the c direction, a state with ±π kinks in the superconductivity phase difference piled up alternatively along the c axis is stabilized. The ±π phase kinks provide interlock between superconductivity phases in adjacent junctions, taking the advantage of huge inductive couplings inherent in the cuprate superconductors, which establishes the coherence across the whole system of more than ˜600 junctions. They also permit a strong coupling between the lateral cavity mode of the transverse Josephson plasma and the c -axis bias, and enhance the plasma oscillation significantly at the cavity modes which radiates EM waves in the terahertz band when the lateral size of mesa is set to tens of micrometers. It is discussed that the cavity mode realized in a very recent experiment using a cylindrical mesa can be explained by the present theory. In order to overcome the heating effect, we propose to use annular geometry. The dependence of frequency on the radius ratio is analyzed, which reveals that the shape tailor is quite promising for improving the present technique of terahertz excitation. The annular geometry may be developed as a waveguide resonator, mimicking the fiber lasers for visible lights.

  3. External dc bias field effects in the nonlinear ac stationary response of permanent dipoles in a uniaxial potential

    NASA Astrophysics Data System (ADS)

    Wei, Nijun; Coffey, William T.; Déjardin, Pirre-Michel; Kalmykov, Yuri P.

    External dc bias field effects on the nonlinear dielectric relaxation and dynamic Kerr effect of a system of permanent dipoles in a uniaxial mean field potential are studied via the rotational Brownian motion model. Postulated in terms of the infinite hierarchy of differential-recurrence equations for the statistical moments (the expectation value of the Legendre polynomials), the dielectric and Kerr effect ac stationary responses may be evaluated for arbitrary dc bias field strength via perturbation theory in the ac field. We have given two complementary approaches for treating the nonlinear effects. The first is based on perturbation theory allowing one to calculate the nonlinear ac stationary responses using powerful matrix methods. The second approach based on the accurate two-mode approximation [D.A. Garanin, Phys. Rev. E. 54, 3250 (1996)] effectively generalizes the existing results for dipolar systems in superimposed ac and dc fields to a mean field potential. The results apply both to nonlinear dielectric relaxation and dynamic Kerr effect of nematics and to magnetic birefringence relaxation of ferrofluids. Furthermore, the given methods of the solution of infinite hierarchies of multi-term recurrence relations are quite general and can be applied to analogous nonlinear response problems.

  4. Effects of bias voltage on diamond like carbon coatings deposited using titanium isopropoxide (TIPOT) and acetylene/argon mixtures onto various substrate materials.

    PubMed

    Said, R; Ghumman, C A A; Teodoro, M N D; Ahmed, W; Abuazza, A; Gracio, J

    2010-04-01

    RF-PECVD was used to prepare amorphous of carbon (DLC) onto stainless steel 316 and glass substrates. The substrates were negatively biased at between 100 V to 400 V. Thin films of DLC have been deposited using C2H2 and titanium isopropoxide (TIPOT). Argon was used to generate the plasma in the PECVD system chamber. DEKTAK 8 surface stylus profilometer was used to measure the film thickness and the deposition rate was calculated. Micro Raman spectroscopy was employed to determine the chemical structure and bonding present in the films. Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) instrument. In addition, X-ray photoelectron spectroscopy (XPS) was used to analyze the composition and chemical state of the films. The wettability of the films was examined using the optical contact angle meter (CAM200) system. Two types of liquids with different polarities were used to study changes in the surface energy. The as-grown films were in the thickness range of 200-400 nm. Raman spectroscopy results showed that the I(D)/I(G) ratio decreased when the bias voltage on the stainless steel substrates was increased. This indicates an increase in the graphitic nature of the film deposited. In contrast, on the glass substrates the I(D)/I(G) ratio increased when the bias voltage was increased indicates a greater degree of diamond like character. Chemical composition determined using XPS showed the presence of carbon and oxygen in both samples on glass and stainless steel substrates. Both coatings the contact angle of the films decreased except for 400 V which showed a slight increase. The oxygen is thought to play an important role on the polar component of a-C.

  5. System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

    NASA Technical Reports Server (NTRS)

    Lipo, Thomas A.; Alan, Irfan

    1991-01-01

    Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the

  6. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    SciTech Connect

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  7. Spectral response measurement of double-junction thin-film photovoltaic devices: the impact of shunt resistance and bias voltage

    NASA Astrophysics Data System (ADS)

    Pravettoni, Mauro; Galleano, Roberto; Virtuani, Alessandro; Müllejans, Harald; Dunlop, Ewan D.

    2011-04-01

    Multijunction photovoltaic (PV) thin-film modules are becoming more and more important on the market, due to their low cost and improved module efficiency now well above 10%. The spectral response (SR) measurement of multijunction thin-film cells presents additional challenges with respect to the SR measurement procedure for single-junction devices. Several works have appeared in the last 15 years in the PV literature, describing certain measurement artefacts that typically appear when measuring the SR of multijunction cells without applying an appropriate voltage bias to the entire cell. In this paper, the authors revise the theoretical description of SR measurements on multijunction devices, show how to detect the possible origin of measurement artefacts from the dark SR and show why bias voltage sometimes is not enough to avoid such artefacts or why it is not even necessary. An experimental confirmation of the theoretical approach is finally given.

  8. Circuit transients due to negative bias arcs on a high-voltage solar array in low Earth orbit

    NASA Technical Reports Server (NTRS)

    Metz, R. N.

    1985-01-01

    Arcing to negatively biased, exposed solar cell interconnects on solar arrays placed in plasma environments was established. Arcing, however, may cause damaging interference with the operation of electrical power systems in spacecraft planned to be driven with high-voltage solar arrays. An analytical model was developed to estimate the effects of netagive bias arcs on solar array power system performance. Solar cell characteristics, plasma interactions, and power system features are modeled by a linear, lumped element transient circuit, and the time domain equations are solved. Numerical results for solar array common mode and load voltage transients are calculated for typical conditions. Acceptable load transients are found for a range of arc current amplitudes and time constants.

  9. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    SciTech Connect

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M.; Ashcroft, C. M.; Canalias, C.; Gruverman, A.

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  10. Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

    NASA Astrophysics Data System (ADS)

    Lee, Gyeo-Re; Hwang, Sung-Wook; Min, Jae-Ho; Moon, Sang Heup

    2002-09-01

    The dependence of the SiO2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from -20 to -600 V in a high-density CHF3 plasma using a Faraday cage to control the ion incident angle. The effect of the bottom plane on the sidewall etching was also examined. Differences in the characteristics of the etch rate as a function of the ion angle were observed for different bias voltage regions. When the absolute value of the bias voltage was smaller than 200 V, the normalized etch rate (NER) defined as the etch rate normalized by the rate on the horizontal surface, changed following a cosine curve with respect to the ion incident angle, defined as the angle between the ion direction and the normal of the substrate surface. When the magnitude of the bias voltage was larger than 200 V, the NER was deviated to higher values from those given by a cosine curve at ion angles between 30deg and 70deg, and then drastically decreased at angles higher than 70deg until a net deposition was observed at angles near 90deg. The characteristic etch-rate patterns at ion angles below 70deg were determined by the ion energy transferred to the surface, which affected the SiO2 etch rate and, simultaneously, the rate of removal of a fluorocarbon polymer film formed on the substrate surface. At high ion angles, particles emitted from the bottom plane contributed to polymer formation on and affected the etching characteristics of the substrate. copyright 2002 American Vacuum Society.

  11. Effect of bias voltage on TiAlSiN nanocomposite coatings deposited by HiPIMS

    NASA Astrophysics Data System (ADS)

    Ma, Quansheng; Li, Liuhe; Xu, Ye; Gu, Jiabin; Wang, Lei; Xu, Yi

    2017-01-01

    TiAlSiN nanocomposite coatings were deposited onto cemented carbide (WC-10 wt.%, Co) substrates by high power impulse magnetron sputtering (HiPIMS). The effect of substrate bias voltage on plasma discharge characterization of HiPIMS, element concentration, deposition rate, microstructure, surface/cross-sectional morphology, hardness and adhesion strength of coatings were studied. Compared with those deposited with direct current magnetic sputtering (DCMS), HiPIMS-deposited TiAlSiN coatings show improvements in some properties, including the surface roughness, the grain size, the hardness and adhesion strength, but a decrease in the deposition rate. When the bias voltage increases, the discharge current rose up from 118A to 165A. HiPIMS-deposited TiAlSiN coatings show a shift of the preferred crystallographic orientation from (220) to (200) and decreases in surface roughness from 14.1 nm down to 7.4 nm and grain size from 10.5 nm to 7.4 nm. Meanwhile, a change in crystal morphology from columnar to equiaxial and a grain refinement, as well as an increase of hardness from 30 GPa up to 42 GPa of those TiAlSiN coatings were observed with the increasing bias voltage and a decrease in adhesion strength from HF2 to HF5 of those coatings were revealed by indentation adhesion test.

  12. Analysis of three-phase rectifiers with AC-side switches and interleaved three-phase voltage-source converters

    NASA Astrophysics Data System (ADS)

    Miller, Stephanie Katherine Teixeira

    Of all the alternative and renewable energy sources, wind power is the fastest growing alternative energy source with a total worldwide capacity of over 93 GW as of the end of 2007. However, making wind energy a sustainable and reliable source of electricity doesn't come without its set of challenges. As the wind turbines increase in size and turbine technology moves towards off-shore wind farms and direct drive transmission, the need for a reliable and efficient power electronics interface to convert the variable-frequency variable-magnitude output of the wind turbine's generator into the fixed-frequency fixed-magnitude voltage of the utility grid is critical. This dissertation investigates a power electronics interface envisioned to operate with an induction generator-based variable-speed wind turbine. The research conclusions and the interface itself are applicable to a variety of applications, including uninterruptible power supplies, industrial drives, and power quality applications, among others. The three-phase PWM rectifiers with ac-side bidirectional switches are proposed as the rectification stage of the power electronics interface. Modulation strategies are proposed for the rectifiers and the operation of the rectifiers in conjunction with an induction generator is demonstrated. The viability of using these rectifiers in place of the standard three-phase voltage-source converter is analyzed by comparing losses and common-mode voltage generation of the two topologies. Parallel three-phase voltage-source converter modules operated in an interleaved fashion are proposed for the inversion stage of the power electronics interface. The interleaved three-phase voltage-source converters are analyzed by deriving analytical models for the common-mode voltage, ac phase current, and dc-link current to reveal their spectra and the harmonic cancellation effects of interleaving. The practical problem of low frequency circulating current in parallel voltage

  13. KEY COMPARISON Final report on APMP international comparison APMP.EM-K9: High voltage AC-DC transfer standards

    NASA Astrophysics Data System (ADS)

    Wei, Yih-Cheng; Yeh, Hsin-Da

    2010-01-01

    The international key comparison APMP.EM-K9 of AC-DC high voltage transfer standards with 12 participants was carried out from June 2000 to January 2004. This comparison offers the same range and frequencies as BIPM key comparison CCEM-K9, voltages at 500 V and 1000 V, frequency from 1 kHz to 100 kHz. This comparison provides the national metrology institutes (NMIs) of the APMP member economies with an opportunity to link the values of their standards for AC-DC transfer difference to the international reference values. The results of the majority of the participating NMIs show an agreement with the reference value within the associated expanded uncertainty given by the individual NMI. The agreement of the results and the tables of the degree of equivalence of the participants are included. The results have been linked to the key comparison CCEM-K9. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

  14. Final report on COOMET key comparison of AC/DC voltage transfer references (COOMET.EM-K6.a)

    NASA Astrophysics Data System (ADS)

    Velychko, O.; Darmenko, Yu

    2016-01-01

    An intercomparison of AC/DC voltage transfer references has taken place within the framework of COOMET. The intercomparison, piloted by State Enterprise 'Ukrmetrteststandard'-UMTS (Ukraine), has involved five laboratories, including one who is a member of another regional metrological organization-EURAMET (INM, Romania). The results presented in this report appear to show that there are significant differences between some laboratories' representations of the volt. However, the agreement demonstrated by the intercomparison provides confidence in maintaining traceability for the AC/DC voltage transfer references. Proposed to link the results from this key comparison to the CCEM-K6.a comparison. VNIIM (Russia) is linking NMI as far as they participated in CCEM-K6.a. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  15. Voltage-Sensor Transitions of the Inward-Rectifying K+ Channel KAT1 Indicate a Latching Mechanism Biased by Hydration within the Voltage Sensor1[W][OPEN

    PubMed Central

    Lefoulon, Cécile; Karnik, Rucha; Honsbein, Annegret; Gutla, Paul Vijay; Grefen, Christopher; Riedelsberger, Janin; Poblete, Tomás; Dreyer, Ingo; Gonzalez, Wendy; Blatt, Michael R.

    2014-01-01

    The Kv-like (potassium voltage-dependent) K+ channels at the plasma membrane, including the inward-rectifying KAT1 K+ channel of Arabidopsis (Arabidopsis thaliana), are important targets for manipulating K+ homeostasis in plants. Gating modification, especially, has been identified as a promising means by which to engineer plants with improved characteristics in mineral and water use. Understanding plant K+ channel gating poses several challenges, despite many similarities to that of mammalian Kv and Shaker channel models. We have used site-directed mutagenesis to explore residues that are thought to form two electrostatic countercharge centers on either side of a conserved phenylalanine (Phe) residue within the S2 and S3 α-helices of the voltage sensor domain (VSD) of Kv channels. Consistent with molecular dynamic simulations of KAT1, we show that the voltage dependence of the channel gate is highly sensitive to manipulations affecting these residues. Mutations of the central Phe residue favored the closed KAT1 channel, whereas mutations affecting the countercharge centers favored the open channel. Modeling of the macroscopic current kinetics also highlighted a substantial difference between the two sets of mutations. We interpret these findings in the context of the effects on hydration of amino acid residues within the VSD and with an inherent bias of the VSD, when hydrated around a central Phe residue, to the closed state of the channel. PMID:25185120

  16. Voltage-biased superconducting transition-edge bolometer with strong electrothermal feedback operated at 370 mK

    SciTech Connect

    Lee, S.; Gildemeister, J.M.; Holmes, W.; Lee, A.T.; Richards, P.L.

    1998-06-01

    We present an experimental study of a composite voltage-biased superconducting bolometer (VSB). The tested VSB consists of a Ti-film superconducting thermometer ( T{sub c}{approximately}375 mK) on a Si substrate suspended by NbTi superconducting leads. A resistor attached to the substrate provides calibrated heat input into the bolometer. The current through the bolometer is measured with a superconducting quantum interference device ammeter. Strong negative electrothermal feedback fixes the bolometer temperature at T{sub c} and reduces the measured response time from 2.6 s to 13 ms. As predicted, the measured current responsivity of the bolometer is equal to the inverse of the bias voltage. A noise equivalent power of 5{times}10{sup {minus}17} W/{radical}()Hz was measured for a thermal conductance G{approximately}4.7{times}10{sup {minus}10} W/K, which is consistent with the expected thermal noise. Excess noise was observed for bias conditions for which the electrothermal feedback strength was close to maximum. {copyright} 1998 Optical Society of America

  17. Effect of negative bias voltage on CrN films deposited by arc ion plating. II. Film composition, structure, and properties

    SciTech Connect

    Wang Qimin; Kim, Kwang Ho

    2008-09-15

    Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating at various negative bias voltages and several groups of N{sub 2}/Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the arc ion plating (AIP) CrN films. In this article, the authors investigated the influence of negative bias voltage on the chemical composition, structure, and mechanical properties of the CrN films. The results showed that the chemical composition and phase structure of the AIP CrN films were greatly altered by application of negative bias voltage. Due to the selective resputtering effect, substoichiometric CrN films were obtained. With increase in bias voltages, the main phases in the films transformed from Cr+CrN to Cr{sub 2}N at low N{sub 2}/Ar flow ratios, whereas the films at high N{sub 2}/Ar flow ratios retained the CrN phase structure. The CrN films experienced texture transformation from CrN (200) to CrN (220), and Cr{sub 2}N (300) to Cr{sub 2}N(300)+Cr{sub 2}N(110). Increase in negative bias voltage also resulted in microstructure evolution of coarse columnar grains{yields}fine columnar grains{yields}quasiamorphous microstructure{yields}recrystallized structures. From the experimental results, the authors proposed a new structure zone model based on enhanced bombardment of incident ions by application of negative bias voltage. The influence of negative bias voltage on the microhardness and residual stresses of the films and the inherent mechanisms were also explored.

  18. Effect of bias voltage on coating homogeneity in plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Slabodchikov, Vladimir A.; Borisov, Dmitry P.; Kuznetsov, Vladimir M.

    2016-11-01

    The paper presents research results demonstrating the influence of bias on the homogeneity of plasma immersion ion implantation. The research results allow the conclusion that plasma immersion ion implantation can be used to advantage for surface modification of medical materials, e.g., nickel-titanium (NiTi) alloys. In particular, doing of NiTi with silicon at pulsed bias provides highly homogeneous surface treatment.

  19. Active Device-Less Voltage Equalization Charger Using Capacitors, Diodes, and an AC Power Source

    NASA Astrophysics Data System (ADS)

    Uno, Masatoshi; Tanaka, Koji

    Conventional cell/module voltage equalizers or equalization chargers based on traditional dc-dc converters require numerous switches or transformers as the number of series connections increases; therefore, their cost and complexity tend to increase and their reliability decreases as the number of connections increases. This paper proposes a novel voltage equalization charger that consists only of passive components such as capacitors, diodes, and a transformer. The fundamental operating principle, major features, and derivation of equivalent dc circuits are presented. A symmetrical configuration is also proposed to mitigate the RMS current flowing through energy storage cells in the charging process. Simulations and experimental charging and cycle tests were performed on series-connected electric double-layer capacitor modules to demonstrate the equalization performance. The experimental and simulation results were in good agreement, and the voltage imbalances were gradually eliminated as time elapsed even during charge-discharge cycling.

  20. Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

    SciTech Connect

    Wang Qimin; Kim, Kwang Ho

    2008-09-15

    Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N{sub 2}/Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N{sub 2} and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics.

  1. Characteristics of corona impulses from insulated wires subjected to high ac voltages

    NASA Technical Reports Server (NTRS)

    Doreswamy, C. V.; Crowell, C. S.

    1976-01-01

    Corona discharges arise due to ionization of air or gas subject to high electric fields. The free electrons and ions contained in these discharges interact with molecules of insulating materials, resulting in chemical changes and destroying the electrical insulating properties. The paper describes some results of measurements aimed at determining corona pulse waveforms, their repetition rate, and amplitude distribution during various randomly-sampled identical time periods of a 60-Hz high-voltage wave. Described are properties of positive and negative corona impulses generated from typical conductors at various test high voltages. A possible method for calculating the energies, densities, and electromagnetic interferences by making use of these results is suggested.

  2. A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.

    PubMed

    Jiang, J; Ma, G M; Luo, D P; Li, C R; Li, Q M; Wang, W

    2014-02-01

    Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

  3. A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system

    NASA Astrophysics Data System (ADS)

    Jiang, J.; Ma, G. M.; Luo, D. P.; Li, C. R.; Li, Q. M.; Wang, W.

    2014-02-01

    Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

  4. Theoretical evidence of maximum intracellular currents versus frequency in an Escherichia coli cell submitted to AC voltage.

    PubMed

    Xavier, Pascal; Rauly, Dominique; Chamberod, Eric; Martins, Jean M F

    2017-04-01

    In this work, the problem of intracellular currents in longilinear bacteria, such as Escherichia coli, suspended in a physiological medium and submitted to a harmonic voltage (AC), is analyzed using the Finite-Element-based software COMSOL Multiphysics. Bacterium was modeled as a cylindrical capsule, ended by semi-spheres and surrounded by a dielectric cell wall. An equivalent single-layer cell wall was defined, starting from the well-recognized three-shell modeling approach. The bacterium was considered immersed in a physiological medium, which was also taken into account in the modeling. A new complex transconductance was thus introduced, relating the complex ratio between current inside the bacterium and voltage applied between two parallel equipotential planes, separated by a realistic distance. When voltage was applied longitudinally relative to the bacterium main axis, numerical results in terms of frequency response in the 1-20 MHz range for E. coli cells revealed that transconductance magnitude exhibited a maximum at a frequency depending on the cell wall capacitance. This occurred in spite of the purely passive character of the model and could be explained by an equivalent electrical network giving very similar results and showing special conditions for lateral paths of the currents through the cell wall. It is shown that the main contribution to this behavior is due to the conductive part of the current. Bioelectromagnetics. 38:213-219, 2017. © 2016 Wiley Periodicals, Inc.

  5. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  6. Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

    SciTech Connect

    Hao, Yu; Rouxinol, Francisco; LaHaye, M. D.

    2014-12-01

    We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10{sup 5} can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED.

  7. Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

    SciTech Connect

    Fabretti, Savio; Zierold, Robert; Nielsch, Kornelius; Voigt, Carmen; Ronning, Carsten; Peretzki, Patrick; Seibt, Michael; Thomas, Andy

    2014-09-29

    Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

  8. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon

    SciTech Connect

    Rodrigues, G.; Lakshmy, P. S.; Kanjilal, D.; Roy, A.; Baskaran, R.

    2010-02-15

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  9. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon.

    PubMed

    Rodrigues, G; Lakshmy, P S; Baskaran, R; Kanjilal, D; Roy, A

    2010-02-01

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  10. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature.

    PubMed

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-02

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.

  11. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy

    SciTech Connect

    Li, Qian; Jesse, Stephen; Tselev, Alexander; Collins, Liam; Yu, Pu; Kravchenko, Ivan; Kalinin, Sergei V.; Balke, Nina

    2015-01-05

    In this paper, nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical and electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. Finally, with many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies.

  12. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature

    NASA Astrophysics Data System (ADS)

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-01

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.

  13. Tunable photonic cavity coupled to a voltage-biased double quantum dot system: Diagrammatic nonequilibrium Green's function approach

    NASA Astrophysics Data System (ADS)

    Agarwalla, Bijay Kumar; Kulkarni, Manas; Mukamel, Shaul; Segal, Dvira

    2016-07-01

    We investigate gain in microwave photonic cavities coupled to voltage-biased double quantum dot systems with an arbitrarily strong dot-lead coupling and with a Holstein-like light-matter interaction, by employing the diagrammatic Keldysh nonequilibrium Green's function approach. We compute out-of-equilibrium properties of the cavity: its transmission, phase response, mean photon number, power spectrum, and spectral function. We show that by the careful engineering of these hybrid light-matter systems, one can achieve a significant amplification of the optical signal with the voltage-biased electronic system serving as a gain medium. We also study the steady-state current across the device, identifying elastic and inelastic tunneling processes which involve the cavity mode. Our results show how recent advances in quantum electronics can be exploited to build hybrid light-matter systems that behave as microwave amplifiers and photon source devices. The diagrammatic Keldysh approach is primarily discussed for a cavity-coupled double quantum dot architecture, but it is generalizable to other hybrid light-matter systems.

  14. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    NASA Astrophysics Data System (ADS)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  15. Probing local bias-induced transitions using photothermal excitation contact resonance atomic force microscopy and voltage spectroscopy

    DOE PAGES

    Li, Qian; Jesse, Stephen; Tselev, Alexander; ...

    2015-01-05

    In this paper, nanomechanical properties are closely related to the states of matter, including chemical composition, crystal structure, mesoscopic domain configuration, etc. Investigation of these properties at the nanoscale requires not only static imaging methods, e.g., contact resonance atomic force microscopy (CR-AFM), but also spectroscopic methods capable of revealing their dependence on various external stimuli. Here we demonstrate the voltage spectroscopy of CR-AFM, which was realized by combining photothermal excitation (as opposed to the conventional piezoacoustic excitation method) with the band excitation technique. We applied this spectroscopy to explore local bias-induced phenomena ranging from purely physical to surface electromechanical andmore » electrochemical processes. Our measurements show that the changes in the surface properties associated with these bias-induced transitions can be accurately assessed in a fast and dynamic manner, using resonance frequency as a signature. Finally, with many of the advantages offered by photothermal excitation, contact resonance voltage spectroscopy not only is expected to find applications in a broader field of nanoscience but also will provide a basis for future development of other nanoscale elastic spectroscopies.« less

  16. Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission.

    PubMed

    Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

    2015-04-01

    We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications.

  17. Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission

    NASA Astrophysics Data System (ADS)

    Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

    2015-04-01

    We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications.

  18. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    SciTech Connect

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  19. Monte Carlo simulations of microchannel plate detectors. I. Steady-state voltage bias results

    SciTech Connect

    Wu Ming; Kruschwitz, Craig A.; Morgan, Dane V.; Morgan, Jiaming

    2008-07-15

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and time-resolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast Z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a MCP under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured MCP sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  20. Final report on COOMET.EM-S5: Supplementary comparison of AC voltage ratio standards (COOMET project 396/UA/07)

    NASA Astrophysics Data System (ADS)

    Kikalo, V. N.; Petrovich, M. L.; Lobzhanidze, N. G.; Kisilev, V. V.; Styblikova, R.

    2013-01-01

    The comparison COOMET No 396/UA/07 of AC voltage ratio standards is registered in the BIPM key comparison database (KCDB) as supplementary comparison COOMET.EM-S5. It was conducted from June 2008 to July 2010 and involved the National Metrology Institutes of the Republic of Belarus, Georgia, the Russian Federation, the Czech Republic and Ukraine. SE "Ukrmetrteststandard" (Ukraine) was the Pilot laboratory for this exercise. The final report lists all data of measurement results and declared uncertainties as obtained by the participating NMIs. The degrees to which the values of the national standards correspond to the reference values of the supplementary comparison are quantitatively evaluated with the conclusions that the results obtained are recognized to be consistent taking into account the declared uncertainties. This gives evidence for supporting the corresponding Calibration and Measurement Capabilities for those values of voltage ratio at which NMIs have performed measurements. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by COOMET, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  1. Bias voltage-dependent low field spin transport properties of Fe3O4-PEG with different particle sizes

    NASA Astrophysics Data System (ADS)

    Xu, Chunlong; Wang, Zhen; Wang, Lei; Shi, Gang; Hou, Zhaoyang; Xi, Li

    2016-08-01

    Spin-dependent transport properties of Fe3O4 spheres with diameters from 200 nm to 900 nm have been investigated and polyethylene glycol (PEG) exists on the surface of Fe3O4 particles. The nonlinear I-V curve became obvious with the increase of Fe3O4 diameter, which indicated the tunneling barrier height decreases with the increasing diameter. The magnetoresistance (MR) can reach -13% with an applied low field of 0.2 T at room temperature. With the diameter increase, the MR decreases and the required applied field increases. Moreover, the decrease of MR with the bias voltage increase can be attributed to the spin-dependent tunneling effect through the insulating surface layer of Fe3O4 and PEG.

  2. Influence of N{sub 2} gas pressure and negative bias voltage on the microstructure and properties of Cr-Si-N films by a hybrid coating system

    SciTech Connect

    Wang Qimin; Park, In-Wook; Kim, Kwangho

    2008-09-15

    Cr-Si-N films were deposited using a hybrid coating system combining arc ion plating and magnetron sputtering. The authors investigated the influence of N{sub 2} flux rate and negative bias voltage on the microstructure and properties of Cr-Si-N films, e.g., chemical composition, film morphology, phase structure, residual stress, and microhardness. The results showed that all the Cr-Si-N films were close to stoichiometry. The N{sub 2} flux rate had no important influence on the microstructure and properties of the Cr-Si-N films. Applying a negative bias voltage resulted in significant decrease in macroparticle densities and smoother film surface. Also the film microstructure transformed from apparent columnar to nanocomposite microstructure. The maximum microhardness obtained ranged from 45 to 50 GPa at a bias voltage ranging from -50 to -100 V. The microhardness enhancement could be ascribed to the mixed effect of grain size diminishment and residual compressive stress.

  3. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    NASA Astrophysics Data System (ADS)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  4. Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted Al2O3 barrier

    NASA Astrophysics Data System (ADS)

    Park, Byong Guk; Lee, Taek Dong

    2002-09-01

    A modified tunnel barrier structure for the magnetic tunnel junction (MTJ) was fabricated by inserting a Hf layer in the middle of the Al2O3 tunnel barrier. MTJs with the Hf-inserted barrier show a higher tunnel mangnetoresistance (TMR) ratio and weaker temperature and bias-voltage dependence of TMR compared to the MTJs with a conventional Al2O3 barrier. The enhancement of the TMR ratio and the reduction of the temperature and bias-voltage dependence were attributed to the reduction of defects in the barrier.

  5. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  6. Effect of bias voltage on tunneling mechanism in Co40Fe40B20/MgO/Co40Fe40B20 pseudo-spin valve

    NASA Astrophysics Data System (ADS)

    Yıldırım, Mustafa; Öksüzoğlu, Ramis Mustafa

    2015-04-01

    Bias voltage dependence of tunneling mechanism has been systematically investigated in Co40Fe40B20 (2.1 nm)/MgO (2 nm)/Co40Fe40B20 (1.7 nm) pseudo-spin valve magnetic tunnel junction deposited using the combination of the pulsed DC unbalanced magnetron and RF magnetron sputtering techniques. Structural investigations revealed polycrystalline and partially (001) oriented growth of CoFeB/MgO(001) MTJ with similar low interface roughness on both side of the MgO barrier. The junction with a 25×25 μm2 area indicates a giant tunnel magnetoresistance in the order of 505% at room temperature. The magnetoresistance ratio decreases with increasing applied bias voltage ranging from 0.5 to 1.8 V. Reasonable values for barrier thickness and heights were obtained using the combination of Brinkman and Gundlach models, including average barrier height and symmetry. Both barrier parameters and the tunneling mechanism vary in dependence of applied bias voltage. The tunneling mechanism indicates a change from direct to the FN tunneling, especially when reaching high bias voltages. Effect of the tunneling mechanism on the bias dependence of the magnetoresistance was also discussed.

  7. AFM-induced amine deprotection: triggering localized bond cleavage by application of tip/substrate voltage bias for the surface self-assembly of nanosized dendritic objects.

    PubMed

    Fresco, Zachary M; Suez, Itai; Backer, Scott A; Fréchet, Jean M J

    2004-07-14

    An alpha,alpha-dimethyl-3,5-dimethoxybenzyloxycarbonyl (DDZ)-protected amine monolayer can be selectively deprotected by the application of a voltage bias from a conducting AFM tip to afford localized nanoscale patterns that can be visualized by self-assembly of dendritic molecular objects with terminal carboxylic acid groups and different aspect ratios.

  8. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  9. Abnormal behavior of threshold voltage shift in bias-stressed a-Si:H thin film transistor under extremely high intensity illumination.

    PubMed

    Han, Sang Youn; Park, Kyung Tea; Kim, Cheolkyu; Jeon, Sanghyun; Yang, Sung-Hoon; Kong, Hyang-Shik

    2015-07-22

    We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination.

  10. Evaluation of bias voltage modulation sequence for nonlinear contrast agent imaging using a capacitive micromachined ultrasonic transducer array.

    PubMed

    Novell, Anthony; Legros, Mathieu; Grégoire, Jean-Marc; Dayton, Paul A; Bouakaz, Ayache

    2014-09-07

    Many clinical diagnoses have now been improved thanks to the development of new techniques dedicated to contrast agent nonlinear imaging. Over the past few years, Capacitive Micromachined Ultrasonic Transducers (cMUTs) have emerged as a promising alternative to traditional piezoelectric transducers. One notable advantage of cMUTs is their wide frequency bandwidth. However, their use in nonlinear imaging approaches such as those used to detect contrast agents have been challenging due their intrinsic nonlinear character. We propose a new contrast imaging sequence, called bias voltage modulation (BVM), specifically developed for cMUTs to suppress their inherent nonlinear behavior. Theoretical and experimental results show that a complete cancellation of the nonlinear signal from the source can be reached when the BVM sequence is implemented. In-vitro validation of the sequence is performed using a cMUT probe connected to an open scanner and a flow phantom setup containing SonoVue microbubbles. Compared to the standard amplitude modulation imaging mode, a 6 dB increase of contrast-to-tissue ratio was achieved when the BVM sequence is applied. These results reveal that the problem of cMUT nonlinearity can be addressed, thus expanding the potential of this new transducer technology for nonlinear contrast agent detection and imaging.

  11. The Dependence of Nucleation Density on the Bias Voltage in the Growth of High Quality Thick Heteroepitaxial Diamond Films on Ir/YSZ/Si(100) Substrates Using Microwave Plasma Chemical Vapor Deposition

    SciTech Connect

    Regmi, Murari; More, Karren Leslie; Eres, Gyula

    2012-01-01

    We report nucleation densities on Ir(100) surfaces that exceed 1011 cm-2 and remain roughly unchanged in a narrow bias voltage range of 50 V starting at 125 V. At lower and higher bias voltages outside of this window the nucleation density drops to values near zero within a 25 V step and remains independent of the bias voltage. We attribute this extreme sensitivity to a delicate nanostructured active Ir phase that is both formed and destroyed by ion bombardment with specific energies. The role of this phase is to mediate the formation of chemically specific carbon that is the precursor for diamond crystallite formation in the subsequent bias free growth stage.

  12. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    SciTech Connect

    Obaidulla, SK. Md. Goswami, D. K. E-mail: dipak@phy.iitkgp.ernet.in; Giri, P. K.

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  13. Impedance spectra of Fe-doped SrTiO3 thin films upon bias voltage: inductive loops as a trace of ion motion.

    PubMed

    Taibl, S; Fafilek, G; Fleig, J

    2016-08-07

    Mass and charge transport properties of slightly Fe-doped SrTiO3 (Fe:STO) thin films on a conducting substrate were investigated by means of impedance spectroscopy under different bias voltages and I-V measurements with varying scan rates. At measurement temperatures between 325 °C and 700 °C the applied bias voltage caused an unusual "inductive loop" in the low frequency range of impedance spectra. DC measurements showed that current-voltage curves strongly depend on the scan rate, indicating that different states of the sample became accessible to probe. Both findings can be understood in terms of bias induced ion motion, i.e. by stoichiometry polarization within the Fe:STO thin films upon voltage. Hence, the appearance of an "inductive loop" in the impedance spectra is considered a very general feature that might exist for many materials, particularly in oxide thin films. It may indicate ion motion and stoichiometry variations taking place in the corresponding frequency range.

  14. The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

    NASA Astrophysics Data System (ADS)

    Altındal, Şemsettin; Uslu, Habibe

    2011-04-01

    The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky barrier diodes (SBDs) was investigated in the frequency range of 3 kHz-3 MHz at room temperature by considering series resistance (Rs) and interface states (Nss) effects. The C-V and G/ω-V characteristics confirm that the Rs and Nss are important parameters that strongly influence the electrical parameters of SBDs. The C-V plots show an intersection point (˜2.9 V) at low frequencies (f ≤ 30 kHz) and then take negative values, which is known as negative capacitance (NC) behavior. The negativity of the C increases with the decreasing frequency in the forward bias voltage region, and this decrement in the NC corresponds to the increment in the conductance. Also, the forward bias C-V plots show an anomalous peak in the voltage range of 1.55-1.9 V depending on the frequency such that the anomalous peaks shift toward positive voltage values with the increasing frequency. The effect of Rs on the C is found appreciable at high frequencies. In addition, the values of Nss and Rs are found to decrease with the increasing frequency.

  15. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    NASA Astrophysics Data System (ADS)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  16. Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity.

    PubMed

    Cheng, Baochang; Xu, Jian; Ouyang, Zhiyong; Xie, Cuicui; Su, Xiaohui; Xiao, Yanhe; Lei, Shuijin

    2013-12-02

    ZnO nanowires have relatively high sensitivity as ultraviolet (UV) photodetectors, while the bandgap of 3.37 eV is an important limitation for their applications in solar-blind UV (SBUV), visible (VIS) and near infrared (NIR) range. Besides UV response, in this study, we demonstrate the promising applications of individual undoped ZnO NWs as high performance SBUV-VIS-NIR broad-spectral-response photodetectors, strongly depended on applied bias voltage and illumination intensity. The dominant mechanism is attributed to the existence of surface states in nanostructured ZnO. At a negative bias voltage electrons can be injected into surface states from electrode, and moreover, under light illumination photogenerated electron-hole pairs can be separated efficiently by surface built-in electric field, resulting into a decrease of potential barrier height and depletion region width, and simultaneously accompanying a filling of oxygen vacancy and a rise of ZnO Fermi level.

  17. Josephson effects in an alternating current biased transition edge sensor

    NASA Astrophysics Data System (ADS)

    Gottardi, L.; Kozorezov, A.; Akamatsu, H.; van der Kuur, J.; Bruijn, M. P.; den Hartog, R. H.; Hijmering, R.; Khosropanah, P.; Lambert, C.; van der Linden, A. J.; Ridder, M. L.; Suzuki, T.; Gao, J. R.

    2014-10-01

    We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a full theoretical explanation of the results by finding the analytic solution of the non-inertial Langevian equation of the system and calculating the non-linear response of the detector to a large ac bias current in the presence of noise.

  18. Comparison of the bias voltage effect and the force effect during the nanoscale AFM electric lithography on the copper thin film surface.

    PubMed

    Yang, Ye; Lin, Jun

    2016-09-01

    As one of the tip-based nanoscale machining methods, AFM-based nanolithography has been proved to be capable of fabricating nanostructures and devices on a wide range of materials by means of mechanical force, bias voltage, chemical reaction, etc. In this paper, we have compared the influences of the bias voltage effect and the force effect during the nanoscale AFM electric lithography on the metallic copper film surface respectively through the bias voltage dominating scheme and the contact force dominating scheme. The geometric sizes of the line structures and the area patterns fabricated under the two schemes with different parameter settings were compared to obtain the machining characteristics and mechanisms of the two distinct effects separately. The ratios of debris amount to the total material removal amount under the two schemes were quantitatively evaluated. Furthermore, both the arbitrary line structure with high aspect ratio and the area pattern with small surface roughness were fabricated under the appropriate scheme and parameter settings. This study is of great help to effectively achieve the desired nanoscale patterns by AFM electric lithography for their promising applications in the fabrication of various MEMS or NEMS devices. SCANNING 38:412-420, 2016. © 2015 Wiley Periodicals, Inc.

  19. Influence of substrate bias voltage on the physical, electrical and dielectric properties of RF magnetron sputtered TiO2 films

    NASA Astrophysics Data System (ADS)

    Kondaiah, P.; Sekhar, M. Chandra; Jagadeesh Chandra, S. V.; Martins, R.; Uthanna, S.; Elangovan, E.

    2012-02-01

    Titanium oxide (TiO2) finds potential applications in various fields such as solar cells, optical coatings due to its high refractive index and it also has been widely used in memory devices owing to its high dielectric constant. TiO2 films have been deposited on p-type silicon (100) substrates by RF magnetron sputtering technique. Thickness, structure and surface morphology of the films were analyzed by using α-step profilometer, Raman spectroscopy and atomic force microscope respectively. Thin film capacitors of the type Al/TiO2/Si were fabricated by evaporation of Aluminium on to the TiO2 films. The current - voltage and capacitance - voltage characteristics were carried out to understand the electrical conduction and dielectric properties of the deposited films with a stack of Al/TiO2/Si. The leakage current density was decreased and capacitance was increased with increase of substrate bias voltage.

  20. A battery-based, low-noise voltage source

    NASA Astrophysics Data System (ADS)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  1. A battery-based, low-noise voltage source.

    PubMed

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of +/-15 and +/-5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7 x 10(-7) over 6.5 h and a noise level equal or smaller than 30 nV/square root(Hz) is achieved.

  2. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    NASA Astrophysics Data System (ADS)

    Flewitt, A. J.; Powell, M. J.

    2014-04-01

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 106-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions

  3. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    NASA Astrophysics Data System (ADS)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  4. Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

    NASA Astrophysics Data System (ADS)

    Feng, G.; van Dijken, Sebastiaan; Feng, J. F.; Coey, J. M. D.; Leo, T.; Smith, David J.

    2009-02-01

    Co40Fe40B20/MgO single and double barrier magnetic tunnel junctions (MTJs) were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance (TMR) ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 mT. The lower TMR ratio for double barrier MTJs can be attributed to the amorphous nature of the middle Co40Fe40B20 free layer, which could not be crystallized during postannealing. A highly asymmetric bias voltage dependence of the TMR can be observed for both single and double barrier MTJs in the as-deposited states and after field annealing at low temperature. The asymmetry decreases with increasing annealing temperature and the bias dependence becomes almost symmetric after annealing at 350 °C. Maximum output voltages of 0.65 and 0.85 V were obtained for both single and double barrier MTJs, respectively, after annealing at 300 °C, a temperature which is high enough for large TMR ratios but insufficient to completely remove asymmetry from the TMR bias dependence.

  5. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    NASA Astrophysics Data System (ADS)

    Jun-Ting, Yu; Shu-Ming, Chen; Jian-Jun, Chen; Peng-Cheng, Huang; Rui-Qiang, Song

    2016-04-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030).

  6. A model for threshold voltage shift under negative gate bias stress in amorphous InGaZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Xu, Piao-Rong; Yao, Ruo-He

    2015-12-01

    In the amorphous InGaZnO thin film transistors (a-IGZO TFTs) with high concentration of oxygen vacancy, the energy level of oxygen vacancy-related donor-like states in a-IGZO films near the gate insulator moves upwards under the negative gate bias stress (NGBS). The electrons in the donor-like states above the midgap are emitted to the conduction band, making the donor-like states positively charged. These positively charged donor-like states accumulate near the interface of the a-IGZO films and gate insulator and screen the gate voltage, thus leading to the negative shift of the threshold voltage (Vth) of a-IGZO TFTs. In this article we establish a physical model of Vth shift in the negative direction under NGBS, and the results are consistent with the experimental results.

  7. Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator.

    PubMed

    Yang, Z; Li, X; Li, J; Long, J D; Lan, C H; Wang, T; Dong, P; He, J L

    2017-03-01

    A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

  8. Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

    NASA Astrophysics Data System (ADS)

    Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

    2017-03-01

    A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

  9. Modulation of hair cell voltage responses to tones by low-frequency biasing of the basilar membrane in the guinea pig cochlea.

    PubMed

    Russell, I J; Kössl, M

    1992-05-01

    Inner (IHC) and outer (OHC) hair cell receptor potentials were recorded during stimulation with combinations of high-frequency (HF) tones and a 100 Hz tone burst of constant level (80 dB SPL). For frequencies at and below characteristic frequency (CF), OHC AC receptor potentials were suppressed by the 100 Hz tone at levels of the HF tone below about 70 dB SPL (the initial steep part of the AC/level function) and at levels that were frequency specific for frequencies above CF. Suppression was associated with a phase lead for frequencies at and close to the CF. For frequencies above CF, the OHC AC response was either suppressed or augmented at levels of the HF tone both below and above 70 dB SPL, depending on the frequency. The action of the 100 Hz tone on the AC response/level functions was to change nonmonotonic functions into monotonic functions or vice versa. IHC DC receptor potentials were suppressed maximally at the CF and at levels and frequencies where suppression of the OHC AC response and the appearance of the IHC DC response overlapped. For levels of the HF tone above 70 dB SPL, the amplitude of the responses of both IHCs and OHCs to the 100 Hz tone are suppressed and become more symmetrical through selective attenuation of the depolarizing phase of the IHC response and the hyperpolarizing phase of the OHC response. In IHCs from insensitive preparations, the response to the 100 Hz tone is augmented in the presence of the HF tone, which may indicate a shift in the operating point of transduction. At frequencies about one-half an octave below the CF, the phase of the 100 Hz voltage response of OHCs but not IHCs is inverted for levels of the HF tone above about 90 dB SPL. It is proposed that amplitude and phase changes in the response to the HF tone due to the presence of the 100 Hz tone are the result of changes in OHC feedback processes and in the mode of movement of the interface between OHC stereocilia and tectorial membrane. The interaction between the

  10. Critical current density and ac harmonic voltage generation in YBaCuO thin films by the screening technique

    NASA Astrophysics Data System (ADS)

    Pérez-López, Israel O.; Gamboa, Fidel; Sosa, Víctor

    2010-12-01

    The temperature and field dependence of harmonics in voltage Vn=Vn‧-iVn″ using the screening technique have been measured for YBaCuO superconducting thin films. Using the Sun model we obtained the curves for the temperature-dependent critical current density Jc(T). In addition, we applied the criterion proposed by Acosta et al. to compute Jc(T). Also, we made used of the empirical law Jc∝(1-T/Tc)n as an input in our calculations to reproduce experimental harmonic generation up to the fifth harmonic. We found that most models fit well the fundamental voltage but higher harmonics are poorly reproduced. Such behavior suggests the idea that higher harmonics contain information concerning complex processes like flux creep or thermally assisted flux flow.

  11. Fast switching, modular high-voltage DC/AC-power supplies for RF-Amplifiers and other applications

    SciTech Connect

    Alex, J.; Schminke, W.

    1995-12-31

    A new kind of high voltage high-power Pulse-Step Modulator (PSM) for broadcast transmitters, accelerator sources, for NBI (Neutral Beam Injection for Plasma Heating), gyrotrons and klystrons has been developed. Since its first introduction in 1984 for broadcast transmitters, more than 100 high-power sound broadcast transmitters had been equipped with the first generation of the PSM modulators, using Gate Turn-Off Thyristors (GTOs) as switching elements. Recently, due to faster switching elements and making use of the latest DSP technologies (Digital Signal Processing), the performance data and areas of application could be extended further. In 1994, a precision high voltage source for MW gyrotrons was installed at CRPP in Lausanne. Supplementary very low cost solutions for lower powers but high voltages had been developed. Hence, today, a large area of applications can be satisfied with the family of solutions. The paper describes the principle of operation, the related control systems and refers to some particular applications of the PSM amplifiers, especially the newest developments and corresponding field results.

  12. Self-bias voltage diagnostics for the amorphous-to-microcrystalline transition in a-Si:H under a hydrogen-plasma treatment

    SciTech Connect

    Hadjadj, A.; Pham, N.; Roca i Cabarrocas, P.; Jbara, O.

    2010-03-15

    The authors demonstrate the possibility of using self-bias voltage on the radio-frequency electrode of a capacitively coupled deposition system as a diagnostic tool to detect the amorphous-to-microcrystalline silicon transition during the exposure of a-Si:H thin films to a hydrogen plasma. This is achieved by combining self-bias voltage (V{sub dc}) and kinetic-ellipsometry measurements, which provide real-time information on the film properties. On intrinsic and n-type a-Si:H films, the hydrogen-plasma exposure results in the formation of a hydrogen-modified layer, which is accompanied with a decrease in the absolute values of V{sub dc}, until a plateau corresponding to the nucleation and the growth of the microcrystalline layer occurs. On p-type a-Si:H, the amorphous-to-microcrystalline transition is characterized by a rapid increase in the absolute values of V{sub dc}. This particular trend is ascribed to the effects of boron on both the solid and plasma phases.

  13. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps.

  14. Simple Floquet-Wannier-Stark-Andreev viewpoint and emergence of low-energy scales in a voltage-biased three-terminal Josephson junction

    NASA Astrophysics Data System (ADS)

    Mélin, Régis; Caputo, Jean-Guy; Yang, Kang; Douçot, Benoît

    2017-02-01

    A three-terminal Josephson junction consists of three superconductors coupled coherently to a small nonsuperconducting island, such as a diffusive metal, a single or double quantum dot. A specific resonant single quantum dot three-terminal Josephson junction (Sa,Sb,Sc) biased with voltages (V ,-V ,0 ) is considered, but the conclusions hold more generally for resonant semiconducting quantum wire setups. A simple physical picture of the steady state is developed, using Floquet theory. It is shown that the equilibrium Andreev bound states (for V =0 ) evolve into nonequilibrium Floquet-Wannier-Stark-Andreev (FWS-Andreev) ladders of resonances (for V ≠0 ). These resonances acquire a finite width due to multiple Andreev reflection (MAR) processes. We also consider the effect of an extrinsic linewidth broadening on the quantum dot, introduced through a Dynes phenomenological parameter. The dc-quartet current manifests a crossover between the extrinsic relaxation dominated regime at low voltage to an intrinsic relaxation due to MAR processes at higher voltage. Finally, we study the coupling between the two FWS-Andreev ladders due to Landau-Zener-Stückelberg transitions, and its effect on the crossover in the relaxation mechanism. Three important low-energy scales are identified, and a perspective is to relate those low-energy scales to a recent noise cross-correlation experiment (Y. Cohen et al., arXiv:1606.08436).

  15. Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage

    NASA Astrophysics Data System (ADS)

    Iida, Kenji; Noda, Masashi; Nobusada, Katsuyuki

    2017-02-01

    We have developed a theoretical approach for describing the electronic properties of hetero-interface systems under an applied electrode bias. The finite-temperature density functional theory is employed for controlling the chemical potential in their interfacial region, and thereby the electronic charge of the system is obtained. The electric field generated by the electronic charging is described as a saw-tooth-like electrostatic potential. Because of the continuum approximation of dielectrics sandwiched between electrodes, we treat dielectrics with thicknesses in a wide range from a few nanometers to more than several meters. Furthermore, the approach is implemented in our original computational program named grid-based coupled electron and electromagnetic field dynamics (GCEED), facilitating its application to nanostructures. Thus, the approach is capable of comprehensively revealing electronic structure changes in hetero-interface systems with an applied bias that are practically useful for experimental studies. We calculate the electronic structure of a SiO2-graphene-boron nitride (BN) system in which an electrode bias is applied between the graphene layer and an electrode attached on the SiO2 film. The electronic energy barrier between graphene and BN is varied with an applied bias, and the energy variation depends on the thickness of the BN film. This is because the density of states of graphene is so low that the graphene layer cannot fully screen the electric field generated by the electrodes. We have demonstrated that the electronic properties of hetero-interface systems are well controlled by the combination of the electronic charging and the generated electric field.

  16. Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage.

    PubMed

    Iida, Kenji; Noda, Masashi; Nobusada, Katsuyuki

    2017-02-28

    We have developed a theoretical approach for describing the electronic properties of hetero-interface systems under an applied electrode bias. The finite-temperature density functional theory is employed for controlling the chemical potential in their interfacial region, and thereby the electronic charge of the system is obtained. The electric field generated by the electronic charging is described as a saw-tooth-like electrostatic potential. Because of the continuum approximation of dielectrics sandwiched between electrodes, we treat dielectrics with thicknesses in a wide range from a few nanometers to more than several meters. Furthermore, the approach is implemented in our original computational program named grid-based coupled electron and electromagnetic field dynamics (GCEED), facilitating its application to nanostructures. Thus, the approach is capable of comprehensively revealing electronic structure changes in hetero-interface systems with an applied bias that are practically useful for experimental studies. We calculate the electronic structure of a SiO2-graphene-boron nitride (BN) system in which an electrode bias is applied between the graphene layer and an electrode attached on the SiO2 film. The electronic energy barrier between graphene and BN is varied with an applied bias, and the energy variation depends on the thickness of the BN film. This is because the density of states of graphene is so low that the graphene layer cannot fully screen the electric field generated by the electrodes. We have demonstrated that the electronic properties of hetero-interface systems are well controlled by the combination of the electronic charging and the generated electric field.

  17. Influence of the substrate bias voltage on the crystallographic structure and mechanical properties of Ti6Al4V coatings deposited by rf magnetron

    NASA Astrophysics Data System (ADS)

    Alfonso, J. E.; Pacheco, Fernando; Castro P., Alvaro; Torres, J.

    2005-08-01

    Physical and mechanical properties of pure titanium are improved when the material is mixed with aluminum and vanadium at specific concentrations. Specifically, the alloy composed by 90% of titanium, 6% of aluminum and 4% of vanadium (Ti-6Al-4V) is highly resistant to fatigue and corrosion titanium and their alloys can be deposited by two techniques: Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD). However, some problems are generated when carbonated steel substrates are used under the CVD technique, mainly because those substrates lost its carbon as a result of the high substrate temperature used during the deposition process. Alternatively, PVD (magnetron sputtering, ion plating) is a low temperature substrate process and also has the advantage that substrate bias can promote structure refinement through resputtering effects.Substrate bias influence on the crystalline structure of Ti6Al4V thin films prepared by rf magnetron sputtering are presented in this work. Samples were grown onto common glass and AISI 420 steel substrates using a Ti6Al4V (99.9 %) target. Substrate bias was varied from -100 V to -200 V. Samples were characterized by X-ray Diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDXS), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Thin films stoichiometry were studied by EDX in agreement with the Ti-6Al-4V target. Finally, the studies of the mechanical behavior of the films on steel showed that the hardness increased 1100 Knoop when the bias voltage is raised to -160 V.

  18. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

    SciTech Connect

    Pasaja, Nitisak; Sansongsiri, Sakon; Anders, Andre; Vilaithong,Thiraphat; Intasiri, Sawate

    2006-09-10

    Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc (FCVA) plasma sources operated in sequential pulsed mode. A negatively pulsed bias was applied to the substrate only when carbon plasma was generated. Films thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrate for the of the measurement sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of sp2 content and an increase of the sp2 cluster size.

  19. Mo-containing tetrahedral amorphous carbon deposited by dualfiltered cathodic vacuum arc with selective pulsed bias voltage

    SciTech Connect

    Pasaja, Nitisak; Sansongsiri, Sakon; Intasiri, Sawate; Vilaithong, Thiraphat; Anders, Andre

    2007-01-24

    Metal-containing tetrahedral amorphous carbon films wereproduced by dual filtered cathodic vacuum arc plasma sources operatedinsequentially pulsed mode. Negatively pulsed bias was applied to thesubstrate when carbon plasma was generated, whereas it was absentwhen themolybdenum plasma was presented. Film thickness was measured afterdeposition by profilometry. Glass slides with silver padswere used assubstrates for the measurement of the sheet resistance. Themicrostructure and composition of the films were characterizedbyRamanspectroscopy and Rutherford backscattering, respectively. It was foundthat the electrical resistivity decreases with an increaseof the Mocontent, which can be ascribed to an increase of the sp2 content and anincrease of the sp2 cluster size.

  20. Negative hydrogen ion beam extraction from an AC heated cathode driven Bernas-type ion source

    NASA Astrophysics Data System (ADS)

    Okano, Y.; Miyamoto, N.; Kasuya, T.; Wada, M.

    2015-04-01

    A plasma grid structure was installed to a Bernas-type ion source used for ion implantation equipment. A negative hydrogen (H-) ion beam was extracted by an AC driven ion source by adjusting the bias to the plasma grid. The extracted electron current was reduced by positively biasing the plasma grid, while an optimum plasma grid bias voltage for negative ion beam extraction was found to be positive 3 V with respect to the arc chamber. Source operations with AC cathode heating show extraction characteristics almost identical to that with DC cathode heating, except a minute increase in H- current at higher frequency of cathode heating current.

  1. Effects of target bias voltage on the electrical conductivity of DLC films deposited by PBII/D with a bipolar pulse

    NASA Astrophysics Data System (ADS)

    Miyagawa, S.; Nakao, S.; Choi, J.; Ikeyama, M.; Miyagawa, Y.

    2006-01-01

    Energetic electrons and ions, which were induced by positive and negative pulses in C7H8 plasma, respectively, were bombarded alternately on a substrate in PBII/D process. The effects of pulsed negative bias voltage on the electrical conductivity of DLC films were studied. Conductivity and hardness of DLC films were measured by a four-point-probe method and microindentation method. Hydrogen concentration, sp2/sp3 ratio, Raman I(D)/I(G) ratio were also measured by ERD, XPS, Raman spectroscopy and the structure of the films was observed by HRTEM. As a result, the resistivity of the film decreased with negative pulse voltage and reached to 1 mΩ cm at -20 kV, and the hardness was 5.4 GPa. It has been shown that the electrically conductive DLC films are composed with cluster of graphite-like aggregate. The technique can be applied for conductive DLC coatings on three-dimensional substrate with high adhesion strength.

  2. Effects of magnetic flux density and substrate bias voltage on Ni films prepared on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma

    SciTech Connect

    Koda, Tatsunori; Toyota, Hiroshi

    2014-03-15

    The authors fabricated Ni films on a flexible substrate material using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effects of magnetic flux density B{sub C} and substrate DC bias voltage V{sub S} on the Ni film structures were investigated. For V{sub S} = −40 V, the average surface grain size D{sub G} measured by atomic force microscopy for B{sub C} = 0, 3, and 5 mT was 88.2, 95.4, and 104.4 nm, respectively. In addition, D{sub G} increased with V{sub S}. From x-ray diffraction measurements, the (111) and (200) peaks were clearly visible for the fabricated Ni films. The ratio of the integrated intensities of I(111)/I(200) increased with V{sub S}. For V{sub S} = −40 V and B{sub C} = 3 mT, a film resistivity ρ of 8.96 × 10{sup −6} Ω cm was observed, which is close to the Ni bulk value of 6.84 × 10{sup −6} Ω cm. From these results, the authors determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the values of B{sub C} and V{sub S}.

  3. Spin-polarization and spin-flip in a triple-quantum-dot ring by using tunable lateral bias voltage and Rashba spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Molavi, Mohamad; Faizabadi, Edris

    2017-04-01

    By using the Green's function formalism, we investigate the effects of single particle energy levels of a quantum dot on the spin-dependent transmission properties through a triple-quantum-dot ring structure. In this structure, one of the quantum dots has been regarded to be non-magnetic and the Rashba spin-orbit interaction is imposed locally on this dot while the two others can be magnetic. The on-site energy of dots, manipulates the interference of the electron spinors that are transmitted to output leads. Our results show that the effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots, which is applicable by a controllable lateral bias voltage externally. Besides, by tuning the parameters such as Rashba spin-orbit interaction, and on-site energy of dots and magnetic flux inside the ring, the structure can be indicated the spin-flip effect and behave as a full spin polarizer or splitter.

  4. AC-coupled front-end for biopotential measurements.

    PubMed

    Spinelli, Enrique Mario; Pallàs-Areny, Ramon; Mayosky, Miguel Angel

    2003-03-01

    AC coupling is essential in biopotential measurements. Electrode offset potentials can be several orders of magnitude larger than the amplitudes of the biological signals of interest, thus limiting the admissible gain of a dc-coupled front end to prevent amplifier saturation. A high-gain input stage needs ac input coupling. This can be achieved by series capacitors, but in order to provide a bias path, grounded resistors are usually included, which degrade the common mode rejection ratio (CMRR). This paper proposes a novel balanced input ac-coupling network that provides a bias path without any connection to ground, thus resulting in a high CMRR. The circuit being passive, it does not limit the differential dc input voltage. Furthermore, differential signals are ac coupled, whereas common-mode voltages are dc coupled, thus allowing the closed-loop control of the dc common mode voltage by means of a driven-right-leg circuit. This makes the circuit compatible with common-mode dc shifting strategies intended for single-supply biopotential amplifiers. The proposed circuit allows the implementation of high-gain biopotential amplifiers with a reduced number of parts, thus resulting in low power consumption. An electrocardiogram amplifier built according to the proposed design achieves a CMRR of 123 dB at 50 Hz.

  5. ACS after SM4: On-orbit Verification of the HST Advanced Camera for Surveys Repair

    NASA Astrophysics Data System (ADS)

    Golimowski, David A.; Cheng, E. S.; Loose, M.; Sirianni, M.; Lupie, O. L.; Smith, L. J.; Arslanian, S.; Boyce, K. R.; Chapman, G.; Chiaberge, M.; Desjardins, T.; Dye, D.; Ellis, T.; Grogin, N. A.; Lim, P.; Lucas, R. A.; Maybhate, A.; Mil, K. J.; Mutchler, M.; Ricardo, R.; Scott, B.; Serrano, B.; Suchkov, A.; Waczynski, A.; Welty, A. D.; Wheeler, T.; Wilson, E.

    2010-01-01

    The newly replaced CCD electronics box (CEB-R) of the Hubble Space Telescope (HST) Advanced Camera for Surveys (ACS) features a programmable SIDECAR ASIC manufactured by Teledyne. The CEB-R not only restores the functionality of the ACS Wide Field Camera (WFC), but it allows optimization of the WFC's imaging performance via on-orbit adjustment of CCD bias and clock voltages and serial-data transmission timing. We describe the strategy, preparation, execution, and results of the ACS Optimization Campaign, an unprecedented on-orbit extension of ground-based integration and testing that was conducted during the HST Servicing Mission Observatory Verification period.

  6. Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

    NASA Astrophysics Data System (ADS)

    Teeter, G.; Harvey, S. P.; Johnston, S.

    2017-01-01

    This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including

  7. Biasing vector network analyzers using variable frequency and amplitude signals

    NASA Astrophysics Data System (ADS)

    Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

  8. Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

    NASA Astrophysics Data System (ADS)

    Choi, Sung-Hwan; Han, Min-Koo

    2012-01-01

    We investigated the degradation of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) for various channel widths under high-gate and drain bias stress. The threshold voltage of IGZO TFT with wide-channel width (W > 100 μm) was significantly shifted. This included stress-induced hump-effect in a negative direction after the stress, whereas IGZO TFT with narrow-channel width (W < 100 μm) shifted in a positive direction. This phenomenon may be attributed to the hole trapping into the back-interface region. In order to enhance the reliability of IGZO TFTs, we developed and verified that the multiple-channel device showed better bias-temperature stability (ΔVTH: -0.1 V), whereas the single-channel device exhibited a -0.4 VΔVTH shift.

  9. AC/DC converter

    NASA Astrophysics Data System (ADS)

    Jain, Praveen K.

    1992-08-01

    In a system such as a 20 kHz space station primary electrical power distribution system, power conversion from AC to DC is required. Some of the basic requirements for this conversion are high efficiency, light weight and small volume, regulated output voltage, close to unity input power factor, distortionless input current, soft-starting, low electromagnetic interference, and high reliability. An AC-to-DC converter is disclosed which satisfies the main design objectives of such converters for use in space. The converter of the invention comprises an input transformer, a resonant network, a current controller, a diode rectifier, and an output filter. The input transformer is for connection to a single phase, high frequency, sinusoidal waveform AC voltage source and provides a matching voltage isolating from the AC source. The resonant network converts this voltage to a sinusoidal, high frequency bidirectional current output, which is received by the current controller to provide the desired output current. The diode rectifier is connected in parallel with the current controller to convert the bidirectional current into a unidirectional current output. The output filter is connected to the rectifier to provide an essentially ripple-free, substantially constant voltage DC output.

  10. Negative hydrogen ion beam extraction from an AC heated cathode driven Bernas-type ion source

    SciTech Connect

    Okano, Y.; Miyamoto, N.; Kasuya, T.; Wada, M.

    2015-04-08

    A plasma grid structure was installed to a Bernas-type ion source used for ion implantation equipment. A negative hydrogen (H{sup −}) ion beam was extracted by an AC driven ion source by adjusting the bias to the plasma grid. The extracted electron current was reduced by positively biasing the plasma grid, while an optimum plasma grid bias voltage for negative ion beam extraction was found to be positive 3 V with respect to the arc chamber. Source operations with AC cathode heating show extraction characteristics almost identical to that with DC cathode heating, except a minute increase in H{sup −} current at higher frequency of cathode heating current.

  11. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    NASA Astrophysics Data System (ADS)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  12. Effects of DC bias on magnetic performance of high grades grain-oriented silicon steels

    NASA Astrophysics Data System (ADS)

    Ma, Guang; Cheng, Ling; Lu, Licheng; Yang, Fuyao; Chen, Xin; Zhu, Chengzhi

    2017-03-01

    When high voltage direct current (HVDC) transmission adopting mono-polar ground return operation mode or unbalanced bipolar operation mode, the invasion of DC current into neutral point of alternating current (AC) transformer will cause core saturation, temperature increasing, and vibration acceleration. Based on the MPG-200D soft magnetic measurement system, the influence of DC bias on magnetic performance of 0.23 mm and 0.27 mm series (P1.7=0.70-1.05 W/kg, B8>1.89 T) grain-oriented (GO) silicon steels under condition of AC / DC hybrid excitation were systematically realized in this paper. For the high magnetic induction GO steels (core losses are the same), greater thickness can lead to stronger ability of resisting DC bias, and the reasons for it were analyzed. Finally, the magnetostriction and A-weighted magnetostriction velocity level of GO steel under DC biased magnetization were researched.

  13. Biasing Simulations of DNA Base Pair Parameters with Application to Propellor Twisting in AT/AT, AA/TT, and AC/GT Steps and Their Uracil Analogs.

    PubMed

    Peguero-Tejada, Alfredo; van der Vaart, Arjan

    2017-01-23

    An accurate and efficient implementation of the six DNA base pair parameters as order parameters for enhanced sampling simulations is presented. The parameter definitions are defined by vector algebra operations on a reduced atomic set of the base pair, and correlate very well with standard definitions. Application of the model is illustrated by umbrella sampling simulations of propeller twisting within AT/AT, AA/TT, and AC/GT steps and their uracil analogs. Strong correlations are found between propeller twisting and a number of conformational parameters, including buckle, opening, BI/BII backbone configuration, and sugar puckering. The thymine methyl group is observed to notably alter the local conformational free energy landscape, with effects within and directly upstream of the thymine containing base pair.

  14. UPS with input commutation between ac and dc sources of power

    SciTech Connect

    Severinsky, A.J.

    1993-08-31

    An uninterruptible power supply is described, said power supply comprising: AC input terminal means for receiving a first AC voltage from an AC power source; DC input terminal means for receiving a first DC voltage from a DC power source; AC output terminal means for connecting to a load; converter means for converting said first AC voltage to a second DC voltage across electrical charge storage means coupled to said converter means, said second DC voltage being larger than the maximum peak voltage of said first AC voltage and said first DC voltage; switching means coupled to said AC power source and said DC power source for selectively connecting said AC power source or said DC power source to said converter means; inverter means coupled to said electrical charge storage means for receiving said second DC voltage and inverting said second DC voltage to a second AC voltage, said second AC voltage being coupled to said AC output terminal means; and control means coupled to said switching means for controlling the operation of said switching means, said control means operating said switching means to connect said AC power source to said converter means only when said first AC voltage is within a predetermined range and operating to connect said DC power source to said converter means when said first AC voltage is outside of said range.

  15. On double exponential forward bias current-voltage (I-V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80-340 K

    NASA Astrophysics Data System (ADS)

    Marıl, E.; Altındal, Ş.; Kaya, A.; Koçyiğit, S.; Uslu, İ.

    2015-04-01

    Current transport mechanisms (CTMs) of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures were investigated using current-voltage (I-V) characteristics in the temperature range of 80-340 K. Semilogarithmic I-V plots show two linear regions corresponding to low (0.075-0.250 V) and moderate (0.27-0.70 V) biases, respectively. Zero-bias barrier height (ΦB0) was observed to increase with increase in the temperature, whereas opposite behaviour was observed for ideality factor (n). ΦB0 and (n-1-1) vesus q/2kT and ΦB0 versus n plots were drawn to get an evidence of Gaussian distribution (GD) of the barrier heights. These plots, too, show two linear regions corresponding to low (80-160 K) and high (200-340 K) temperature ranges (LTR and HTR), respectively. Mean value of barrier height (?B0) and standard deviation (σs) were extracted from the intercept and slope of ΦB0 versus q/2kT plots for two linear regions as 0.382 eV, 0.0060 V for LTR and 0.850 eV, 0.135 V for HTR at low biases and 0.364 eV, 0.0059 V for LTR and 0.806 eV, 0.132 V for HTR at high biases, respectively. ?B0 and Richardson constant (A*) values were also obtained from the intercept and slope of the modified Richardson (Ln(Io/T2)-(q2σs2/2k2T2) versus q/kT) plots as 131.81 Acm-2 K-2, 0.381 eV for LTR and 129.35 Acm-2 K-2, 0. 854 eV for HTR at low biases and 148.01 Acm-2 K-2, 0.377 eV for LTR and 143.77 Acm-2 K-2, 0.812 eV for HTR at high biases, respectively. In conclusion, CTM in the structure can be successfully explained in terms of thermionic emission theory with the double GD of barrier heights.

  16. Digital ac monitor

    DOEpatents

    Hart, George W.; Kern, Jr., Edward C.

    1987-06-09

    An apparatus and method is provided for monitoring a plurality of analog ac circuits by sampling the voltage and current waveform in each circuit at predetermined intervals, converting the analog current and voltage samples to digital format, storing the digitized current and voltage samples and using the stored digitized current and voltage samples to calculate a variety of electrical parameters; some of which are derived from the stored samples. The non-derived quantities are repeatedly calculated and stored over many separate cycles then averaged. The derived quantities are then calculated at the end of an averaging period. This produces a more accurate reading, especially when averaging over a period in which the power varies over a wide dynamic range. Frequency is measured by timing three cycles of the voltage waveform using the upward zero crossover point as a starting point for a digital timer.

  17. Digital ac monitor

    DOEpatents

    Hart, G.W.; Kern, E.C. Jr.

    1987-06-09

    An apparatus and method is provided for monitoring a plurality of analog ac circuits by sampling the voltage and current waveform in each circuit at predetermined intervals, converting the analog current and voltage samples to digital format, storing the digitized current and voltage samples and using the stored digitized current and voltage samples to calculate a variety of electrical parameters; some of which are derived from the stored samples. The non-derived quantities are repeatedly calculated and stored over many separate cycles then averaged. The derived quantities are then calculated at the end of an averaging period. This produces a more accurate reading, especially when averaging over a period in which the power varies over a wide dynamic range. Frequency is measured by timing three cycles of the voltage waveform using the upward zero crossover point as a starting point for a digital timer. 24 figs.

  18. Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

    NASA Astrophysics Data System (ADS)

    Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2002-01-01

    Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment.

  19. Effect of applied bias voltage on corrosion-resistance for TiC 1- xN x and Ti 1- xNb xC 1- yN y coatings

    NASA Astrophysics Data System (ADS)

    Caicedo, J. C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gómez, M. E.; Alvarado-Rivera, J.; Muñoz-Saldaña, J.; Prieto, P.

    2010-02-01

    Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and "impurities" of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

  20. ACS after Servicing Mission 4: The WFC Optimization Campaign

    NASA Astrophysics Data System (ADS)

    Golimowski, David; Cheng, Ed; Loose, Markus; Sirianni, Marco; Lupie, Olivia; Smith, Linda; Arslanian, Steve; Boyce, Kevin; Chapman, George; Chiaberge, Marco; Desjardins, Tyler; Dye, Darryl; Grogin, Norman; Lim, Pey Lian; Lucas, Ray; Maybhate, Aparna; Mil, Kathleen; Mutchler, Max; Ricardo, Raphael; Scott, Barbara; Serrano, Beverly; Suchkov, Anatoly; Waczynski, Augustyn; Welty, Alan; Wheeler, Thomas; Wilson, Erin

    2011-07-01

    The ACS CCD Electronics Box Replacement (CEB-R) installed during SM4 features a Teledyne SIDECAR ASIC that permits optimization of the WFC via adjustment of CCD clock voltages, bias voltages, and pixel transmission timing. A built-in oscilloscope mode allows sensing of the analog signal from each output amplifier. An on-orbit campaign to optimize the performance of the WFC was undertaken at the start of the SMOV period. Initial tests with pre-SM4 default voltages and timing patterns showed that WFC's performance matches or exceeds its pre-failure levels, notwithstanding the expected increases in dark current and hot pixels and the decline in charge-transfer efficiency due to prolonged exposure to HST's radiation environment. The WFC2 CCD exhibited anomalous behavior when operated with nondefault settings of its amplifiers' reset-drain voltage (VOD). The CCD again displayed normal behavior when VOD was restored to its default setting. Consequently, the Optimization Campaign was truncated after two iterations, and ACS science operations commenced with the pre-SM4 default configuration.

  1. Electric Control of Exchange Bias Training

    NASA Astrophysics Data System (ADS)

    Echtenkamp, W.; Binek, Ch.

    2013-11-01

    Voltage-controlled exchange bias training and tunability are introduced. Isothermal voltage pulses are used to reverse the antiferromagnetic order parameter of magnetoelectric Cr2O3, and thus continuously tune the exchange bias of an adjacent CoPd film. Voltage-controlled exchange bias training is initialized by tuning the antiferromagnetic interface into a nonequilibrium state incommensurate with the underlying bulk. Interpretation of these hitherto unreported effects contributes to new understanding in electrically controlled magnetism.

  2. Demonstration of an ac Josephson junction laser

    NASA Astrophysics Data System (ADS)

    Cassidy, M. C.; Bruno, A.; Rubbert, S.; Irfan, M.; Kammhuber, J.; Schouten, R. N.; Akhmerov, A. R.; Kouwenhoven, L. P.

    2017-03-01

    Superconducting electronic devices have reemerged as contenders for both classical and quantum computing due to their fast operation speeds, low dissipation, and long coherence times. An ultimate demonstration of coherence is lasing. We use one of the fundamental aspects of superconductivity, the ac Josephson effect, to demonstrate a laser made from a Josephson junction strongly coupled to a multimode superconducting cavity. A dc voltage bias applied across the junction provides a source of microwave photons, and the circuit’s nonlinearity allows for efficient down-conversion of higher-order Josephson frequencies to the cavity’s fundamental mode. The simple fabrication and operation allows for easy integration with a range of quantum devices, allowing for efficient on-chip generation of coherent microwave photons at low temperatures.

  3. ac bidirectional motor controller

    NASA Technical Reports Server (NTRS)

    Schreiner, K.

    1988-01-01

    Test data are presented and the design of a high-efficiency motor/generator controller at NASA-Lewis for use with the Space Station power system testbed is described. The bidirectional motor driver is a 20 kHz to variable frequency three-phase ac converter that operates from the high-frequency ac bus being designed for the Space Station. A zero-voltage-switching pulse-density-modulation technique is used in the converter to shape the low-frequency output waveform.

  4. ACS CCDs daily monitor

    NASA Astrophysics Data System (ADS)

    Sirianni, Marco

    2006-07-01

    This program consists of a set of basic tests to monitor, the read noise, thedevelopment of hot pixels and test for any source of noise in ACS CCDdetectors. The files, biases and dark will be used to create referencefiles for science calibration. This programme will be for the entire lifetime of ACS.For cycle 15 the program will cover 18 months 12.1.06->05.31.08and it has been divied into three different proposal each covering six months.The three poroposal are 11041-11042-11043.

  5. Thermal transport through ac-driven transparent Josephson weak links

    NASA Astrophysics Data System (ADS)

    Virtanen, P.; Giazotto, F.

    2014-07-01

    We discuss how phase coherence manifests in the heat transport through superconducting single and multichannel Josephson junctions in time-dependent situations. We consider the heat current driven through the junction by a temperature difference in dc voltage and ac phase biased situations. At low bias, the electromagnetic driving mainly modifies the form of the coherent resonance that transports a large part of the heat current, rather than simply dissipating energy in the junction. We find a description for the heat current in terms of quasiparticle n-photon absorption and emission rates, and discuss analytical and numerical results concerning them. In addition to the ensemble average heat transport, we describe also its fluctuations.

  6. Achieving High Performance in AC-Field Driven Organic Light Sources

    PubMed Central

    Xu, Junwei; Carroll, David L.; Smith, Gregory M.; Dun, Chaochao; Cui, Yue

    2016-01-01

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m2 with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today’s OLEDs in performance. PMID:27063414

  7. Achieving High Performance in AC-Field Driven Organic Light Sources

    NASA Astrophysics Data System (ADS)

    Xu, Junwei; Carroll, David L.; Smith, Gregory M.; Dun, Chaochao; Cui, Yue

    2016-04-01

    Charge balance in organic light emitting structures is essential to simultaneously achieving high brightness and high efficiency. In DC-driven organic light emitting devices (OLEDs), this is relatively straight forward. However, in the newly emerging, capacitive, field-activated AC-driven organic devices, charge balance can be a challenge. In this work we introduce the concept of gating the compensation charge in AC-driven organic devices and demonstrate that this can result in exceptional increases in device performance. To do this we replace the insulator layer in a typical field-activated organic light emitting device with a nanostructured, wide band gap semiconductor layer. This layer acts as a gate between the emitter layer and the voltage contact. Time resolved device characterization shows that, at high-frequencies (over 40 kHz), the semiconductor layer allows for charge accumulation in the forward bias, light generating part of the AC cycle and charge compensation in the negative, quiescent part of the AC cycle. Such gated AC organic devices can achieve a non-output coupled luminance of 25,900 cd/m2 with power efficiencies that exceed both the insulator-based AC devices and OLEDs using the same emitters. This work clearly demonstrates that by realizing balanced management of charge, AC-driven organic light emitting devices may well be able to rival today’s OLEDs in performance.

  8. Module Two: Voltage; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will study and learn what voltage is, how it is generated, what AC (alternating current) and DC (direct current) are and why both kinds are needed, and how to measure voltages. The module is divided into six lessons: EMF (electromotive force) from chemical action, magnetism, electromagnetic induction, AC voltage, the…

  9. Angular dependence of Si{sub 3}N{sub 4} etch rates and the etch selectivity of SiO{sub 2} to Si{sub 3}N{sub 4} at different bias voltages in a high-density C{sub 4}F{sub 8} plasma

    SciTech Connect

    Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

    2007-09-15

    The dependence of Si{sub 3}N{sub 4} etch rates and the etch selectivity of SiO{sub 2} to Si{sub 3}N{sub 4} on ion-incident angles was studied for different bias voltages in a high-density C{sub 4}F{sub 8} plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si{sub 3}N{sub 4} etching, but it increased with the bias voltage in SiO{sub 2} etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si{sub 3}N{sub 4} etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO{sub 2} than for Si{sub 3}N{sub 4} and, consequently, the etch selectivity of SiO{sub 2} to Si{sub 3}N{sub 4} decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO{sub 2} had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF{sub x}) film formed on the substrates.

  10. A multi-module microfluidic platform for continuous pre-concentration of water-soluble ions and separation of oil droplets from oil-in-water (O/W) emulsions using a DC-biased AC electrokinetic technique.

    PubMed

    Das, Dhiman; Phan, Dinh-Tuan; Zhao, Yugang; Kang, Yuejun; Chan, Vincent; Yang, Chun

    2017-03-01

    A novel continuous flow microfluidic platform specifically designed for environmental monitoring of O/W emulsions during an aftermath of oil spills is reported herein. Ionized polycyclic aromatic hydrocarbons which are toxic are readily released from crude oil to the surrounding water phase through the smaller oil droplets with enhanced surface area. Hence, a multi-module microfluidic device is fabricated to form ion enrichment zones in the water phase of O/W emulsions for the ease of detection and to separate micron-sized oil droplets from the O/W emulsions. Fluorescein ions in the water phase are used to simulate the presence of these toxic ions in the O/W emulsion. A DC-biased AC electric field is employed in both modules. In the first module, a nanoporous Nafion membrane is used for activating the concentration polarization effect on the fluorescein ions, resulting in the formation of stable ion enrichment zones in the water phase of the emulsion. A 35.6% amplification of the fluorescent signal is achieved in the ion enrichment zone; corresponding to 100% enrichment of the fluorescent dye concentration. In this module, the main inlet is split into two channels by using a Y-junction so that there are two outlets for the oil droplets. The second module located downstream of the first module consists of two oil droplet entrapment zones at two outlets. By switching on the appropriate electrodes, either one of the two oil droplet entrapment zones can be activated and the droplets can be blocked in the corresponding outlet.

  11. Experimental validation of a high voltage pulse measurement method.

    SciTech Connect

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  12. Inexpensive pulse-train converter measures analog voltage

    NASA Technical Reports Server (NTRS)

    Sturman, J. C.

    1977-01-01

    Converter measures small voltages or currents in presence of very large common-mode voltages (thousands of volts ac or dc). Advantages are low power consumption, transmission via single isolated channel, simplicity, and operation from single-polarity power supply.

  13. Eliminating Bias

    EPA Pesticide Factsheets

    Learn how to eliminate bias from monitoring systems by instituting appropriate installation, operation, and quality assurance procedures. Provides links to download An Operator's Guide to Eliminating Bias in CEM Systems.

  14. Bias dependence of perpendicular spin torque and eigenmode distributions in MgO-based nanopillars.

    SciTech Connect

    Muduli, P. K.; Heinonen, O. G.; Akerman, J.

    2011-05-01

    We have measured the bias voltage and field dependence of eigenmode frequencies in a magnetic tunnel junction with MgO barrier. We show that both free layer (FL) and reference layer (RL) modes are excited, and that a crossover between these modes is observed by varying external field and bias voltage. The bias voltage dependence of the FL and RL modes are shown to be dramatically different. The bias dependence of the FL modes is linear in bias voltage, whereas that of the RL mode is strongly quadratic. Using modeling and micromagnetic simulations, we show that the linear bias dependence of FL frequencies is primarily due to a linear dependence of the perpendicular spin torque on bias voltage, whereas the quadratic dependence of the RL on bias voltage is dominated by the reduction of exchange bias due to Joule heating, and is not attributable to a quadratic dependence of the perpendicular spin torque on bias voltage.

  15. Simple Equipment for Imaging AC.

    ERIC Educational Resources Information Center

    Kamata, Masahiro; Anayama, Takayuki

    2003-01-01

    Presents an effective way to demonstrate the difference between direct current and alternating current using red and green LEDs. Describes how to make a tool that shows how an AC voltage changes with time using the afterimage effect of the LEDs. (Author/NB)

  16. AC resistance measuring instrument

    DOEpatents

    Hof, P.J.

    1983-10-04

    An auto-ranging AC resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an AC excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance. After the auto-ranging and auto-compensation functions are complete, the microprocessor calculates the resistance of the load from the selected range resistance, the excitation signal, and the load voltage signal, and displays of the measured resistance on a digital display of the instrument. 8 figs.

  17. AC Resistance measuring instrument

    DOEpatents

    Hof, Peter J.

    1983-01-01

    An auto-ranging AC resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an AC excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance. After the auto-ranging and auto-compensation functions are complete, the microprocessor calculates the resistance of the load from the selected range resistance, the excitation signal, and the load voltage signal, and displays of the measured resistance on a digital display of the instrument.

  18. High voltage supply for neutron tubes in well logging applications

    DOEpatents

    Humphreys, D. Russell

    1989-01-01

    A high voltage supply is provided for a neutron tube used in well logging. The "biased pulse" supply of the invention combines DC and "full pulse" techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  19. Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer

    NASA Astrophysics Data System (ADS)

    Tunç, T.; Gökçen, M.; Uslu, İ.

    2012-11-01

    The admittance technique was used in order to investigate the frequency dependence of dielectric constant ( ɛ'), dielectric loss ( ɛ″), dielectric loss tangent (tan δ), the ac electrical conductivity ( σ ac), and the electric modulus of PVA (Ni-doped) structure. Experimental results revealed that the values of ɛ' , ɛ″, (tan δ), σ ac and the electric modulus show fairly large frequency and gate bias dispersion due to the interface charges and polarization. The σ ac is found to increase with both increasing frequency and voltage. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal-polymer-semiconductor (MIS) structures especially at low frequencies and in depletion and accumulation regions. The results of this study indicate that the ɛ' values of Au/PVA/n-Si with Nickel-doped PVA interfacial layer are quite higher compared to those with pure and other dopant/mixture's of PVA.

  20. Intergroup bias.

    PubMed

    Hewstone, Miles; Rubin, Mark; Willis, Hazel

    2002-01-01

    This chapter reviews the extensive literature on bias in favor of in-groups at the expense of out-groups. We focus on five issues and identify areas for future research: (a) measurement and conceptual issues (especially in-group favoritism vs. out-group derogation, and explicit vs. implicit measures of bias); (b) modern theories of bias highlighting motivational explanations (social identity, optimal distinctiveness, uncertainty reduction, social dominance, terror management); (c) key moderators of bias, especially those that exacerbate bias (identification, group size, status and power, threat, positive-negative asymmetry, personality and individual differences); (d) reduction of bias (individual vs. intergroup approaches, especially models of social categorization); and (e) the link between intergroup bias and more corrosive forms of social hostility.

  1. Frequency-controlled voltage regulator

    NASA Technical Reports Server (NTRS)

    Mclyman, W. T.

    1980-01-01

    Converting input ac to higher frequency reduce size and weight and makes possible unique kind of regulation. Since conversion frequency is above range of human hearing, supply generated on audible noise. It also exploits highfrequency conversion features to regulate its output voltage in novel way. Circuit is inherently short-circuit proof.

  2. Characteristics of plasma grid bias in large-scaled negative ion source

    SciTech Connect

    Kisaki, M.; Tsumori, K.; Ikeda, K.; Nakano, H.; Osakabe, M.; Nagaoka, K.; Takeiri, Y.; Kaneko, O.

    2014-02-15

    The electron density was measured at various bias voltages to understand how the plasma grid bias affects the electron near the plasma grid in large-scaled negative ion sources. It was found that the response of the electron to the bias voltage changes depending on negative ion production processes. The electron density remarkably decreases with increasing the bias voltage in the pure-volume plasma. On the other hand, the electron density depends on the bias voltage weakly in the Cs-seeded plasma. In addition, it was observed that the response of the co-extracted electron current to the bias voltage has similar trend to that of the electron density.

  3. VOLTAGE REGULATOR

    DOEpatents

    Von Eschen, R.L.; Scheele, P.F.

    1962-04-24

    A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

  4. Three-phase-to-two-phase direct AC-AC converter with three leg structure

    NASA Astrophysics Data System (ADS)

    Kwak, S.-S.

    2014-05-01

    A three-phase-to-two-phase ac-ac converter is, along with a modulation strategy based on the space vector scheme, introduced to directly drive two-phase output ac systems with high input power quality. The converter is capable of synthesising two sinusoidal output voltages with variable output frequency and arbitrary magnitude in quadrature phase-shift as well as sinusoidal input currents.

  5. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-07-01

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  6. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means.

  7. Polaron effects on the dc- and ac-tunneling characteristics of molecular Josephson junctions

    NASA Astrophysics Data System (ADS)

    Wu, B. H.; Cao, J. C.; Timm, C.

    2012-07-01

    We study the interplay of polaronic effect and superconductivity in transport through molecular Josephson junctions. The tunneling rates of electrons are dominated by vibronic replicas of the superconducting gap, which show up as prominent features in the differential conductance for the dc and ac current. For relatively large molecule-lead coupling, a features that appears when the Josephson frequency matches the vibron frequency can be identified with an over-the-gap structure observed by Marchenkov [Nat. Nanotech. 1748-338710.1038/nnano.2007.2182, 481 (2007)]. However, we are more concerned with the weak-coupling limit, where resonant tunneling through the molecular level dominates. We find that certain features involving both Andreev reflection and vibron emission show an unusual shift of the bias voltage V at their maximum with the gate voltage Vg as V˜(2/3)Vg. Moreover, due to the polaronic effect, the ac Josephson current shows a phase shift of π when the bias eV is increased by one vibronic energy quantum ℏωv. This distinctive even-odd effect is explained in terms of the different sign of the coupling to vibrons of electrons and of Andreev-reflected holes.

  8. High Voltage Power Supply Design Guide for Space

    NASA Technical Reports Server (NTRS)

    Bever, Renate S.; Ruitberg, Arthur P.; Kellenbenz, Carl W.; Irish, Sandra M.

    2006-01-01

    This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.

  9. ac-resistance-measuring instrument

    SciTech Connect

    Hof, P.J.

    1981-04-22

    An auto-ranging ac resistance measuring instrument for remote measurement of the resistance of an electrical device or circuit connected to the instrument includes a signal generator which generates an ac excitation signal for application to a load, including the device and the transmission line, a monitoring circuit which provides a digitally encoded signal representing the voltage across the load, and a microprocessor which operates under program control to provide an auto-ranging function by which range resistance is connected in circuit with the load to limit the load voltage to an acceptable range for the instrument, and an auto-compensating function by which compensating capacitance is connected in shunt with the range resistance to compensate for the effects of line capacitance.

  10. Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

    NASA Astrophysics Data System (ADS)

    Murakami, Eiichi; Furuichi, Takahiro; Takeshita, Tatsuya; Oda, Kazuhiro

    2017-04-01

    Despite the advances in SiC-MOSFET technology in recent years, high-temperature stability remains a significant issue. In this work, we examine the positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation (AC-PBTI). The dependence of the threshold voltage shift (ΔV th) on the duty-cycle of gate pulses (1 kHz) is measured, which shows a strong dependence on the gate off-voltage V gs(OFF). When using V gs(OFF) = ‑5 V, ΔV th becomes negligible even in a 90% duty cycle, which is practically informative for power circuit applications. The trap–detrap model for Si is used to explain this marked behavior. Finally, by considering the band bending at V gs(OFF), we propose the interface-state-assisted detrapping mechanism as one possible explanation for this behavior.

  11. Dual-voltage power supply has increased efficiency

    NASA Technical Reports Server (NTRS)

    Sturman, J. C.

    1966-01-01

    Simple circuit provides two different dc output voltages from an ac source. It employs a full-wave rectifier connected to two passive branches from which the separate dc voltages are taken. The outputs have low ripple and good voltage regulation.

  12. AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

    NASA Technical Reports Server (NTRS)

    Gottardi, L.; van de Kuur, J.; Bandler, S.; Bruijn, M.; de Korte, P.; Gao, J. R.; den Hartog, R.; Hijmering, R. A.; Hoevers, H.; Koshropanah, P.; Kilbourne, C.; Lindemann, M. A.; Parra Borderias, M.; Ridder, M.

    2011-01-01

    SRON is developing Frequency Domain Multiplexing (FDM) for the read-out of transition edge sensor (TES) soft x-ray microcalorimeters for the XMS instrument of the International X-ray Observatory and far-infrared bolometers for the SAFARI instrument on the Japanese mission SPICA. In FDM the TESs are AC voltage biased at frequencies from 0.5 to 6 MHz in a superconducting LC resonant circuit and the signal is read-out by low noise and high dynamic range SQUIDs amplifiers. The TES works as an amplitude modulator. We report on several AC bias experiments performed on different detectors. In particular, we discuss the results on the characterization of Goddard Space Flight Center x-ray pixels and SRON bolometers. The paper focuses on the analysis of different read-out configurations developed to optimize the noise and the impedance matching between the detectors and the SQUID amplifier. A novel feedback network electronics has been developed to keep the SQUID in flux locked loop, when coupled to superconducting high Q circuits, and to optimally tune the resonant bias circuit. The achieved detector performances are discussed in view of the instrument requirement for the two space missions.

  13. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions.

    PubMed

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-22

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences (GC)NGC and (GC)1(TA)NTA (GC)3 sandwiched between two Pt electrodes. We show that at low temperature DNA sequence (GC)NGC exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence (GC)1(TA)NTA (GC)3 with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules.

  14. Square wave voltages-induced ON states of organic resistive memory devices

    NASA Astrophysics Data System (ADS)

    Qin, Jiajun; Chu, Ming; Peng, Huan; Zhang, Jiawei; Hou, Xiaoyuan

    2016-10-01

    In organic resistive memory device field, alternating current (AC) has seldom been studied systematically. In the present work, square wave voltage pulses are considered to obtain memory switching to the ON state with voltage amplitude lower than the threshold voltage of the device, even with less time. The ON states induced by such AC depend on both frequency and amplitude. A possible mechanism related to filamentary formation was proposed to explain the AC induced effect.

  15. High-voltage-compatible, fully depleted CCDs

    SciTech Connect

    Holland, Stephen E.; Bebek, Chris J.; Dawson, Kyle S.; Emes, JohnE.; Fabricius, Max H.; Fairfield, Jessaym A.; Groom, Don E.; Karcher, A.; Kolbe, William F.; Palaio, Nick P.; Roe, Natalie A.; Wang, Guobin

    2006-05-15

    We describe charge-coupled device (CCD) developmentactivities at the Lawrence Berkeley National Laboratory (LBNL).Back-illuminated CCDs fabricated on 200-300 mu m thick, fully depleted,high-resistivity silicon substrates are produced in partnership with acommercial CCD foundry.The CCDs are fully depleted by the application ofa substrate bias voltage. Spatial resolution considerations requireoperation of thick, fully depleted CCDs at high substrate bias voltages.We have developed CCDs that are compatible with substrate bias voltagesof at least 200V. This improves spatial resolution for a given thickness,and allows for full depletion of thicker CCDs than previously considered.We have demonstrated full depletion of 650-675 mu m thick CCDs, withpotential applications in direct x-ray detection. In this work we discussthe issues related to high-voltage operation of fully depleted CCDs, aswell as experimental results on high-voltage-compatible CCDs.

  16. Journal bias or author bias?

    PubMed

    Harris, Ian

    2016-01-01

    I read with interest the comment by Mark Wilson in the Indian Journal of Medical Ethics regarding bias and conflicts of interest in medical journals. Wilson targets one journal (the New England Journal of Medicine: NEJM) and one particular "scandal" to make his point that journals' decisions on publication are biased by commercial conflicts of interest (CoIs). It is interesting that he chooses the NEJM which, by his own admission, had one of the strictest CoI policies and had published widely on this topic. The feeling is that if the NEJM can be guilty, they can all be guilty.

  17. AC losses in a HTS coil carrying DC current in AC external magnetic field

    NASA Astrophysics Data System (ADS)

    Ogawa, J.; Zushi, Y.; Fukushima, M.; Tsukamoto, O.; Suzuki, E.; Hirakawa, M.; Kikukawa, K.

    2003-10-01

    We electrically measured AC losses in a Bi2223/Ag-sheathed pancake coil excited by a DC current in AC external magnetic field. Losses in the coil contain two kinds of loss components that are the magnetization losses and dynamic resistance losses. In the measurement, current leads to supply a current to the coil were specially arranged to suppress electromagnetic coupling between the coil current and the AC external magnetic field. A double pick-up coils method was used to suppress a large inductive voltage component contained in voltage signal for measuring the magnetization losses. It was observed that the magnetization losses were dependent on the coil current and that a peak of a curve of the loss factor vs. amplitude of the AC external magnetic field shifted to lower amplitude of the AC magnetic field as the coil current increased. This result suggests the full penetration magnetic field of the coil tape decreases as the coil current increases. The dynamic resistance losses were measured by measuring a DC voltage appearing between the coil terminals. It was observed that the DC voltage appearing in the coil subject to the AC external magnetic field was much larger than that in the coil subject to DC magnetic field.

  18. Evaluation of modern IGBT-modules for hard-switched AC/DC/AC converters

    SciTech Connect

    Blaabjerg, F.; Pedersen, J.K.; Jaeger, U.

    1995-12-31

    The development of IGBT devices is still producing faster devices with lower losses. The applications become more advanced like a complete hard-switched AC/DC/AC converter with almost clean input current and regenerating capabilities. This paper will first focus on a detailed characterization and comparison of eight different IGBT-modules representing state-of-the-art for both PT and NPT technologies. The voltage level of the devices is 1,200V and 1,600V/1,700V. The characterization is done on an advanced measurement system which is briefly described. The characterization is based on static and dynamic tests for both IGBT and the diodes in the IGBT-modules at a junction temperature at 125 C. The comparison is first done directly based on conduction losses and switching losses, and later the measurements are used in a loss model for a complete AC/DC/AC converter application. In the AC/DC/AC converter the power losses are modelled, and different operating conditions are compared like different voltage levels in the DC-link. It is concluded dependent on operation conditions different devices will be preferable, but the high voltage devices have the highest losses even at a high operating voltage.

  19. Voltage modulation of propagating spin waves in Fe

    SciTech Connect

    Nawaoka, Kohei; Shiota, Yoichi; Miwa, Shinji; Tamura, Eiiti; Tomita, Hiroyuki; Mizuochi, Norikazu; Shinjo, Teruya; Suzuki, Yoshishige

    2015-05-07

    The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

  20. Rapid and precise measurement of flatband voltage

    NASA Technical Reports Server (NTRS)

    Li, S. P.; Ryan, M.; Bates, E. T.

    1976-01-01

    The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

  1. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance spectroscopy method

    NASA Astrophysics Data System (ADS)

    Mert, Yıldırım; Perihan, Durmuş; Şemsettin, Altındal

    2013-10-01

    In this study, Al/p—Si and Al/Bi4Ti3O12/p—Si structures are fabricated and their interface states (Nss), the values of series resistance (Rs), and AC electrical conductivity (σac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance—voltage (C—V) and conductance—voltage (G—V) measurements. In addition, the effect of interfacial Bi4Ti3O12 (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy (Ea), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal—semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (NA), built-in potential (Vbi), Fermi energy (EF), image force barrier lowering (Δ Φb), and barrier height (Φb), are extracted using reverse bias C-2—V characteristics as a function of temperature.

  2. A Matter of Quantum Voltages

    SciTech Connect

    Sellner, Bernhard; Kathmann, Shawn M.

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. Electron holography is able to measure the variation of voltages in matter and modern supercomputers allow the calculation of quantum voltages with practically unlimited spatial and temporal resolution of bulk systems. Of particular interest is the Mean Inner Potential (Vo) - the spatial average of these voltages. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of Vo for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Furthermore, we predict Vo as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. This research used resources of the National Energy Research Scientific Computing Center, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  3. Transport AC Losses in Striated YBCO Coated Conductors (Postprint)

    DTIC Science & Technology

    2012-02-01

    AFRL-RZ-WP-TP-2012-0124 TRANSPORT AC LOSSES IN STRIATED YBCO COATED CONDUCTORS (POSTPRINT) G.A. Levin and P.N. Barnes Mechanical Energy...TRANSPORT AC LOSSES IN STRIATED YBCO COATED CONDUCTORS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...2006. 14. ABSTRACT DC current-voltage characteristics and transport ac losses of striated and non-striated Y1Ba2Cu3O7-δ ( YBCO ) coated conductors

  4. Optical rectification at visible frequency in biased bilayer graphene

    NASA Astrophysics Data System (ADS)

    Hipolito, F.; Pereira, Vitor M.

    2015-03-01

    The second order response of the electrical current to an electromagnetic field is analyzed within the framework of non-equilibrium many-body perturbation theory for the case of a two-dimensional electronic system such as graphene and its bilayer. The absence of inversion symmetry in a biased graphene bilayer allows a finite DC response in second order to an AC electromagnetic wave. The induced DC current is evaluated for biased bilayer at finite temperature, and its tunability is analyzed as a function of electron density, which can be experimentally varied by means of a global gate voltage applied to the sample. Both intrinsic and photon drag microscopic processes are considered, as they contribute on similar footing to the photocurrent in general. However, the dependencies of these two contributions on the polarization state of the incident light are different, which allows the manipulation of the relative contribution of intrinsic versus photon drag contributions by tuning the experimental parameters. For example, the photocurrent emerging from circularly polarized light stems entirely from photon drag, as the circular photogalvanic effect is forbidden by the C3 rotation symmetry of the honeycomb lattice.

  5. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    SciTech Connect

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  6. High-voltage supply for neutron tubes in well-logging applications

    DOEpatents

    Humphreys, D.R.

    1982-09-15

    A high voltage supply is provided for a neutron tube used in well logging. The biased pulse supply of the invention combines DC and full pulse techniques and produces a target voltage comprising a substantial negative DC bias component on which is superimposed a pulse whose negative peak provides the desired negative voltage level for the neutron tube. The target voltage is preferably generated using voltage doubling techniques and employing a voltage source which generates bipolar pulse pairs having an amplitude corresponding to the DC bias level.

  7. Self regulating body bias generator

    NASA Technical Reports Server (NTRS)

    Hass, Kenneth (Inventor)

    2004-01-01

    The back bias voltage on a functional circuit is controlled through a closed loop process. A delay element receives a clock pulse and produces a delay output. The delay element is advantageously constructed of the same materials as the functional circuit so that the aging and degradation of the delay element parallels the degradation of the functional circuit. As the delay element degrades, the transistor switching time increases, increasing the time delay of the delay output. An AND gate compares a clock pulse to an output pulse of the delay element, the AND output forming a control pulse. A duty cycle of the control pulse is determined by the delay time between the clock pulse and the delay element output. The control pulse is received at the input of a charge pump. The charge pump produces a back bias voltage which is then applied to the delay element and to the functional circuit. If the time delay produced by the delay element exceeds the optimal delay, the duty cycle of the control pulse is shortened, and the back bias voltage is lowered, thereby increasing the switching speed of the transistors in the delay element and reducing the time delay. If the throughput of the delay element is too fast, the duty cycle of the control pulse is lengthened, raising the back bias voltage produced by the charge pump. This, in turn, lowers the switching speed of the transistors in both the delay element and the functional circuit. The slower switching speed in the delay element increases time delay. In this manner, the switching speed of the delay element, and of the functional circuit, is maintained at a constant level over the life of the circuit.

  8. Voltage Controller

    NASA Technical Reports Server (NTRS)

    1997-01-01

    Power Efficiency Corporation, specifically formed to manufacture and develop products from NASA technology, has a license to a three-phase power factor controller originally developed by Frank Nola, an engineer at Marshall Space Flight Center. Power Efficiency and two major distributors, Performance Control and Edison Power Technologies, use the electronic control boards to assemble three different motor controllers: Power Commander, Performance Controller, and Energy Master. The company Power Factor Controller reduces excessive energy waste in AC induction motors. It is used in industries and applications where motors operate under variable loads, including elevators and escalators, machine tools, intake and exhaust fans, oil wells, conveyors, pumps, die casting, and compressors. Customer lists include companies such as May Department Stores, Caesars Atlantic City, Ford Motors, and American Axle.

  9. Mechanically Biased, Hinged Pairs of Piezoelectric Benders

    NASA Technical Reports Server (NTRS)

    Sager, Frank E.

    2005-01-01

    The upper part of the figure depicts an actuator that comprises two mechanically biased piezoelectric benders hinged together at their ends and equipped with tabs at their mid-length points for attachment to the relatively moving objects that are to be actuated. In the example of the figure, the attachment tabs are labeled to indicate that the actuator is used to drive a pump piston relative to a base plate. Actuators of this type could be used to drive low-power, small-volume pumps in consumer, medical, and aerospace applications, and to generate and measure linear displacements in such robotic applications as teleoperation and tactile feedback. Each bender is a bimorph a unitary plate that comprises an upper and a lower piezoelectric layer plus electrode layers. Benders may also be made of several layers arranged to produce the same effect at the lower operating voltages. As stated above, each bender is mechanically biased; it is fabricated to have a small permanent curvature (the bias curvature) in the absence of applied voltage. As on other bimorphs, the electrical connections on each bender are arranged so that an applied voltage of suitable polarity causes the upper layer to expand and the lower layer to contract. In this case, the net effect of applying the voltage is that the plate becomes more concave as viewed from below. Conversely, an applied voltage of the opposite polarity causes the plate to become less concave as viewed from below. The benders in a hinged pair are oriented with their bias curvatures concave inward, so that there is a bias distance between the attachment tabs. The two benders are connected electrically in parallel, with their connection polarities chosen so that an applied voltage of one polarity causes both benders to become more convex inward (more bent), while an applied voltage of the opposite polarity causes both benders to become less convex inward (less bent). An increase or decrease in bend is accompanied by an increase or

  10. System and method for determining stator winding resistance in an AC motor using motor drives

    DOEpatents

    Lu, Bin; Habetler, Thomas G; Zhang, Pinjia

    2013-02-26

    A system and method for determining the stator winding resistance of AC motors is provided. The system includes an AC motor drive having an input connectable to an AC source and an output connectable to an input terminal of an AC motor, a pulse width modulation (PWM) converter having switches therein to control current flow and terminal voltages in the AC motor, and a control system connected to the PWM converter. The control system generates a command signal to cause the PWM converter to control an output of the AC motor drive corresponding to an input to the AC motor, selectively generates a modified command signal to cause the PWM converter to inject a DC signal into the output of the AC motor drive, and determines a stator winding resistance of the AC motor based on the DC signal of at least one of the voltage and current.

  11. Recovery of consciousness in broilers following combined dc and ac stunning

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Broilers in the United States are typically electrically stunned using low voltage-high frequency pulsed DC water bath stunners and in the European Union broilers are electrocuted using high voltage-low frequency AC. DC stunned broilers regain consciousness in the absence of exsanguination and AC st...

  12. A high-speed TVC system for full-range AC traceability

    SciTech Connect

    Julie, L.

    1994-12-31

    A difficult and important region in the AC traceability chain lies in the higher voltage ranges from 30 volts to 1000 volts at frequencies between 100 khz and 1 Mhz. This paper describes recent developments to improve the accuracy/speed performance of AC voltage buildup over thes ranges.

  13. The Electrically Controlled Exchange Bias

    NASA Astrophysics Data System (ADS)

    Harper, Jacob

    Controlling magnetism via voltage in the virtual absence of electric current is the key to reduce power consumption while enhancing processing speed, integration density and functionality in comparison with present-day information technology. Almost all spintronic devices rely on tailored interface magnetism. Controlling magnetism at thin-film interfaces, preferably by purely electrical means, is therefore a key challenge to better spintronics. However, there is no direct interaction between magnetization and electric fields, thus making voltage control of magnetism in general a scientific challenge. The significance of controlled interface magnetism started with the exchange-bias effect. Exchange bias is a coupling phenomenon at magnetic interfaces that manifests itself prominently in the shift of the ferromagnetic hysteresis loop along the magnetic-field axis. Various attempts on controlling exchange bias via voltage utilizing different scientific principles have been intensively studied recently. The majority of present research is emphasizing on various complex oxides. Our approach can be considered as a paradigm shift away from complex oxides. We focus on a magnetoelectric antiferromagnetic simple oxide Cr2O3. From a combination of experimental and theoretical efforts, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This is a significant scientific breakthrough providing a new route towards potentially revolutionizing information technology. In addition, a second path of electrically controlled exchange bias is introduced by exploiting the piezoelectric property of BaTiO3. An exchange-bias Co

  14. High-Voltage Droplet Dispenser

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.

    2003-01-01

    An apparatus that is extremely effective in dispensing a wide range of droplets has been developed. This droplet dispenser is unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release a droplet. Apparatuses that deploy individual droplets have been used in many applications, including, notably, study of combustion of liquid fuels. Experiments on isolated droplets are useful in that they enable the study of droplet phenomena under well-controlled and simplified conditions. In this apparatus, a syringe dispenses a known value of liquid, which emerges from, and hangs onto, the outer end of a flat-tipped, stainless steel needle. Somewhat below the needle tip and droplet is a ring electrode. A bias high voltage, followed by a high-voltage pulse, is applied so as to attract the droplet sufficiently to pull it off the needle. The voltages are such that the droplet and needle are negatively charged and the ring electrode is positively charged.

  15. Response of dairy cattle to transient voltages and magnetic fields

    SciTech Connect

    Reinemann, D.J.; Laughlin, N.K.; Stetson, L.E.

    1995-07-01

    Stray voltages in dairy facilities have been studied since the 1970`s. Previous research using steady-state ac and dc voltages has defined cow-contact voltage levels which may cause behavior and associated production problems. This research was designed to address concerns over possible effects of transient voltages and magnetic fields on dairy cows. Dairy cows response to transient voltages and magnetic fields was measured. The waveforms of the transient voltages applied were: 5 cycles of 60-Hz ac with a total pulse time of 83 ms, 1 cycle of 60-Hz ac with a total pulse time of 16 ms, and 1 cycle of an ac square wave (spiking positive and negative) of 2-ms duration. Alternating magnetic fields were produced by passing 60-Hz ac fundamental frequency with 2nd and 3rd harmonic and random noise components in metal structures around the cows. The maximum magnetic field associated with this current flow was in excess of 4 G. A wide range of sensitivity to transient voltages was observed among cows. Response levels from 24 cows to each transient exposure were normally distributed. No responses to magnetic fields were observed.

  16. Multipeak self-biased magnetoelectric coupling characteristics in four-phase Metglas/Terfenol-D/Be-bronze/PMN-PT structure

    NASA Astrophysics Data System (ADS)

    Huang, Dongyan; Lu, Caijiang; Bing, Han

    2015-04-01

    This letter develops a self-biased magnetoelectric (ME) structure Metglas/Terfenol-D/Be-bronze/PMN-PT (MTBP) consisting of a magnetization-graded Metglas/Terfenol-D layer, a elastic Be-bronze plate, and a piezoelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) plate. By using the magnetization-graded Metglas/Terfenol-D layer and the elastic Be-bronze plate, multi-peak self-biased ME responses are obtained in MTBP structure. The experimental results show that the MTBP structure with two layers of Metglas foil has maximum zero-biased ME voltage coefficient (MEVC). As frequency increases from 0.5 to 90 kHz, eleven large peaks of MEVC with magnitudes of 0.75-33 V/(cm Oe) are observed at zero-biased magnetic field. The results demonstrate that the proposed multi-peak self-biased ME structure may be useful for multifunctional devices such as multi-frequency energy harvesters or low-frequency ac magnetic field sensors.

  17. Toroidal-Core Microinductors Biased by Permanent Magnets

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo; Blaes, Brent

    2003-01-01

    The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current

  18. AC loss measurements of twisted and untwisted BSCCO multifilamentary tapes

    NASA Astrophysics Data System (ADS)

    Jiang, Zhenan; Amemiya, Naoyuki; Nishioka, Takamasa; Oh, Sang-Soo

    2005-01-01

    AC losses in twisted and untwisted BSCCO multifilamentary superconducting tapes with Ag matrix developed in DAPAS program were measured by an electrical method. Magnetization and transport losses were measured by a pick-up coil and by a voltage taps. Total AC loss during simultaneous application of AC transport current and an AC transverse magnetic field was given by the sum of the magnetization and transport losses measured during this simultaneous application. The magnetization loss without transport current of untwisted and twisted tapes was measured first to evaluate the effect of twisting to decouple filaments. Then, the total AC loss of the twisted tape was measured in transverse magnetic fields with various amplitudes and orientations, while the amplitude of the transport current was fixed. The measured total AC loss in a parallel transverse magnetic field was compared with some theoretical models to study the detailed characteristics of the measured total AC loss of the sample.

  19. A single-phase embedded Z-source DC-AC inverter.

    PubMed

    Kim, Se-Jin; Lim, Young-Cheol

    2014-01-01

    In the conventional DC-AC inverter consisting of two DC-DC converters with unipolar output capacitors, the output capacitor voltages of the DC-DC converters must be higher than the DC input voltage. To overcome this weakness, this paper proposes a single-phase DC-AC inverter consisting of two embedded Z-source converters with bipolar output capacitors. The proposed inverter is composed of two embedded Z-source converters with a common DC source and output AC load. Though the output capacitor voltages of the converters are relatively low compared to those of a conventional inverter, an equivalent level of AC output voltages can be obtained. Moreover, by controlling the output capacitor voltages asymmetrically, the AC output voltage of the proposed inverter can be higher than the DC input voltage. To verify the validity of the proposed inverter, experiments were performed with a DC source voltage of 38 V. By controlling the output capacitor voltages of the converters symmetrically or asymmetrically, the proposed inverter can produce sinusoidal AC output voltages. The experiments show that efficiencies of up to 95% and 97% can be achieved with the proposed inverter using symmetric and asymmetric control, respectively.

  20. Non-contact current and voltage sensor

    SciTech Connect

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  1. Enhancement of adhesion by a transition layer: Deposition of a-C film on ultrahigh molecular weight polyethylene (UHMWPE) by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    He, F. F.; Bai, W. Q.; Li, L. L.; Wang, X. L.; Xie, Y. J.; Jin, G.; Tu, J. P.

    2016-02-01

    An amorphous carbon (a-C) film is deposited on the plasma-treated UHMWPE substrate using a closed field unbalanced magnetron sputtering to improve its tribological properties. During the plasma treatment period, a transition layer is prepared by high energy ion bombardment at a bias voltage of -500 V to enhance the adhesion between the a-C film and the substrate. The mechanical and tribological properties of the a-C film were evaluated by nano-indentation and ball-on-disk tribometer. After deposition of a-C film with a thickness 900 nm, the nano-hardness of UHMWPE significantly increases from 47 MPa to 720 MPa and the wear rate decreases from 9.82 × 10-15 m3 N-1 m-1 to 4.78 × 10-15 m3 N-1 m-1 in bovine calf serum solution. The formation of the transition layer is believed to be the reason why the vertical adhesion between the a-C film and the UHMWPE substrate is enhanced.

  2. A dry-cooled AC quantum voltmeter

    NASA Astrophysics Data System (ADS)

    Schubert, M.; Starkloff, M.; Peiselt, K.; Anders, S.; Knipper, R.; Lee, J.; Behr, R.; Palafox, L.; Böck, A. C.; Schaidhammer, L.; Fleischmann, P. M.; Meyer, H.-G.

    2016-10-01

    The paper describes a dry-cooled AC quantum voltmeter system operated up to kilohertz frequencies and 7 V rms. A 10 V programmable Josephson voltage standard (PJVS) array was installed on a pulse tube cooler (PTC) driven with a 4 kW air-cooled compressor. The operating margins at 70 GHz frequencies were investigated in detail and found to exceed 1 mA Shapiro step width. A key factor for the successful chip operation was the low on-chip power consumption of 65 mW in total. A thermal interface between PJVS chip and PTC cold stage was used to avoid a significant chip overheating. By installing the cryocooled PJVS array into an AC quantum voltmeter setup, several calibration measurements of dc standards and calibrator ac voltages up to 2 kHz frequencies were carried out to demonstrate the full functionality. The results are discussed and compared to systems with standard liquid helium cooling. For dc voltages, a direct comparison measurement between the dry-cooled AC quantum voltmeter and a liquid-helium based 10 V PJVS shows an agreement better than 1 part in 1010.

  3. Phonon effects on the current noise spectra and the ac conductance of a single molecular junction.

    PubMed

    Ding, Guo-Hui; Dong, Bing

    2014-07-30

    By using nonequilibrium Green's functions and the equation of motion method, we formulate a self-consistent field theory for the electron transport through a single-molecule junction (SMJ) coupled with a vibrational mode. We show that the nonequilibrium dynamics of the phonons in a strong electron-phonon coupling regime can be taken into account appropriately in this self-consistent perturbation theory, and the self-energy of the phonons is connected with the current fluctuations in the molecular junction. We calculate the finite-frequency nonsymmetrized noise spectra and the ac conductance, which reveal a wealth of inelastic electron tunneling characteristics on the absorption and emission properties of this SMJ. In the presence of a finite bias voltage and the electron tunneling current, the vibration mode of the molecular junction is heated and driven to an unequilibrated state. The influences of unequilibrated phonons on the current and the noise spectra are investigated.

  4. Phonon effects on the current noise spectra and the ac conductance of a single molecular junction

    NASA Astrophysics Data System (ADS)

    Ding, Guo-Hui; Dong, Bing

    2014-07-01

    By using nonequilibrium Green’s functions and the equation of motion method, we formulate a self-consistent field theory for the electron transport through a single-molecule junction (SMJ) coupled with a vibrational mode. We show that the nonequilibrium dynamics of the phonons in a strong electron-phonon coupling regime can be taken into account appropriately in this self-consistent perturbation theory, and the self-energy of the phonons is connected with the current fluctuations in the molecular junction. We calculate the finite-frequency nonsymmetrized noise spectra and the ac conductance, which reveal a wealth of inelastic electron tunneling characteristics on the absorption and emission properties of this SMJ. In the presence of a finite bias voltage and the electron tunneling current, the vibration mode of the molecular junction is heated and driven to an unequilibrated state. The influences of unequilibrated phonons on the current and the noise spectra are investigated.

  5. Fabrication of alumina films with laminated structures by ac anodization.

    PubMed

    Segawa, Hiroyo; Okano, Hironaga; Wada, Kenji; Inoue, Satoru

    2014-02-01

    Anodization techniques by alternating current (ac) are introduced in this review. By using ac anodization, laminated alumina films are fabricated. Different types of alumina films consisting of 50-200 nm layers were obtained by varying both the ac power supply and the electrolyte. The total film thickness increased with an increase in the total charge transferred. The thickness of the individual layers increased with the ac voltage; however, the anodization time had little effect on the film thickness. The laminated alumina films resembled the nacre structure of shells, and the different morphologies exhibited by bivalves and spiral shells could be replicated by controlling the rate of increase of the applied potentials.

  6. Fabrication of alumina films with laminated structures by ac anodization

    NASA Astrophysics Data System (ADS)

    Segawa, Hiroyo; Okano, Hironaga; Wada, Kenji; Inoue, Satoru

    2014-02-01

    Anodization techniques by alternating current (ac) are introduced in this review. By using ac anodization, laminated alumina films are fabricated. Different types of alumina films consisting of 50-200 nm layers were obtained by varying both the ac power supply and the electrolyte. The total film thickness increased with an increase in the total charge transferred. The thickness of the individual layers increased with the ac voltage; however, the anodization time had little effect on the film thickness. The laminated alumina films resembled the nacre structure of shells, and the different morphologies exhibited by bivalves and spiral shells could be replicated by controlling the rate of increase of the applied potentials.

  7. Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

    DOEpatents

    Gallegos-Lopez, Gabriel [Torrance, CA; Nagashima, James M [Cerritos, CA; Perisic, Milun [Torrance, CA; Hiti, Silva [Redondo Beach, CA

    2012-02-14

    A system is provided for controlling two AC machines. The system comprises a DC input voltage source that provides a DC input voltage, a voltage boost command control module (VBCCM), a five-phase PWM inverter module coupled to the two AC machines, and a boost converter coupled to the inverter module and the DC input voltage source. The boost converter is designed to supply a new DC input voltage to the inverter module having a value that is greater than or equal to a value of the DC input voltage. The VBCCM generates a boost command signal (BCS) based on modulation indexes from the two AC machines. The BCS controls the boost converter such that the boost converter generates the new DC input voltage in response to the BCS. When the two AC machines require additional voltage that exceeds the DC input voltage required to meet a combined target mechanical power required by the two AC machines, the BCS controls the boost converter to drive the new DC input voltage generated by the boost converter to a value greater than the DC input voltage.

  8. Berkson's bias, selection bias, and missing data.

    PubMed

    Westreich, Daniel

    2012-01-01

    Although Berkson's bias is widely recognized in the epidemiologic literature, it remains underappreciated as a model of both selection bias and bias due to missing data. Simple causal diagrams and 2 × 2 tables illustrate how Berkson's bias connects to collider bias and selection bias more generally, and show the strong analogies between Berksonian selection bias and bias due to missing data. In some situations, considerations of whether data are missing at random or missing not at random are less important than the causal structure of the missing data process. Although dealing with missing data always relies on strong assumptions about unobserved variables, the intuitions built with simple examples can provide a better understanding of approaches to missing data in real-world situations.

  9. Programmable high voltage power supply with regulation confined to the high voltage section

    NASA Technical Reports Server (NTRS)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  10. Operation of NIST Josephson Array Voltage Standards

    PubMed Central

    Hamilton, Clark A.; Burroughs, Charles; Chieh, Kao

    1990-01-01

    This paper begins with a brief discussion of the physical principles and history of Josephson effect voltage standards. The main body of the paper deals with the practical details of the array design, cryoprobe construction, bias source requirements, adjustment of the system for optimum performance, calibration algorithms, and an assessment of error sources for the NIST-developed Josephson array standard. PMID:28179776

  11. Inverse ac Josephson effect at terahertz frequencies

    NASA Astrophysics Data System (ADS)

    Danchi, W. C.; Golightly, W. J.; Sutton, E. C.

    1989-04-01

    Using the Werthamer (1966) theory of superconducting tunnel junctions, it is shown that zero-crossing ac Josephson steps can occur at frequencies much higher than those expected previously, as long as the voltage waveform is nearly sinusoidal. Limits on the amount of permitted rounding of the Riedel (1964) peak were derived from analytical calculations, and numerical frequency-domain and time-domain computations for realistic junctions were carried out, yielding support for these limits. It is shown that previous arguments that zero-crossing steps could never be observed above the value of half the gap voltage are incorrect, due to the neglect of the Riedel peak.

  12. High-output microwave detector using voltage-induced ferromagnetic resonance

    SciTech Connect

    Shiota, Yoichi Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2014-11-10

    We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

  13. Transistor biased amplifier minimizes diode discriminator threshold attenuation

    NASA Technical Reports Server (NTRS)

    Larsen, R. N.

    1967-01-01

    Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.

  14. Total dose performance of radiation hardened voltage regulators and references

    NASA Technical Reports Server (NTRS)

    McClure, S.; Gorelick, J.; Pease, R.; Rax, B.; Ladbury, R.

    2001-01-01

    Total dose test of commercially available radiation hardened bipolar voltage regulators and references show reduced sensitivity to dose rate and varying sensitivity to bias under pressure. Behavior of critical parameters in different dose rate and bias conditions is compared and the impact to hardness assurance methodology is discussed.

  15. Auto bias control and bias hold circuit for IQ-modulator in flexible optical QAM transmitter with Nyquist filtering.

    PubMed

    Kawakami, Hiroto; Kobayashi, Takayuki; Yoshida, Mitsuteru; Kataoka, Tomoyoshi; Miyamoto, Yutaka

    2014-11-17

    An Auto Bias Control (ABC) technique for the IQ-modulator of a flexible optical QAM transmitter is described. This technique can support various optical QAM signal formats with Nyquist filtering and electronic dispersion pre-compensation. 16, 32 and 64-QAM signals (21 Gbaud) are successfully generated, and all bias voltages are held to their optimum value even when signal format is changed.

  16. Channel model for AC electric arc

    NASA Astrophysics Data System (ADS)

    Larsen, H. L.

    1993-06-01

    This report contains the results from calculations of free-burning AC electric arcs in argon. In order to calculate the arc current and arc voltage, the external electric circuit must be taken into consideration. The external circuit is modeled by an equivalent circuit consisting of an ideal AC voltage source, a loss resistance, and an inductance. The qualitative behavior of the current-voltage characteristic is in agreement with observed characteristics, but experimental data are necessary in order to check whether the calculated power loss is reasonable. Non-symmetry was modeled by introducing different anode and cathode falls in the two half periods. An attempt at taking into account different cathode current densities in the two half periods, depending on whether the electrode or silicon melt is cathode, did not give satisfactory results. Thermionic emission was assumed in both half periods, but this may not be the right mechanism when the silicon melt is cathode. The time delay of the AC arc compared to the DC case is modeled by a time constant. It was shown that this preset time constant must be in agreement with the mean 'mechanical' relaxation time in the arc in order to fulfill the energy balance. By updating the time constant until this is achieved, the time constant is eliminated as a parameter that must be chosen a priori.

  17. An AC electroosmotic micropump for circular chromatographic applications.

    PubMed

    Debesset, S; Hayden, C J; Dalton, C; Eijkel, J C T; Manz, A

    2004-08-01

    Flow rates of up to 50 microm s(-1) have been successfully achieved in a closed-loop channel using an AC electroosmotic pump. The AC electroosmotic pump is made of an interdigitated array of unequal width electrodes located at the bottom of a channel, with an AC voltage applied between the small and the large electrodes. The flow rate was found to increase linearly with the applied voltage and to decrease linearly with the applied frequency. The pump is expected to be suitable for circular chromatography for the following reasons: the driving forces are distributed over the channel length and the pumping direction is set by the direction of the interdigitated electrodes. Pumping in a closed-loop channel can be achieved by arranging the electrode pattern in a circle. In addition the inherent working principle of AC electroosmotic pumping enables the independent optimisation of the channel height or the flow velocity.

  18. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

    NASA Astrophysics Data System (ADS)

    Ibrahim, Yücedağ; Ahmet, Kaya; Şemsettin, Altındal; Ibrahim, Uslu

    2014-04-01

    In order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, Al/p-Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or ɛ'-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant (ɛ' and ɛ″) and electric modulus (M' and M″), loss tangent (tan δ), and AC electrical conductivity (σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M' versus V and M″ versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.

  19. High-Voltage Pulse Voltage Generator,

    DTIC Science & Technology

    1979-12-21

    the invention: I. I. Kalyatskiy, V. I. Kurets, and V. I. Safronov Well-known are pulse voltage generators which employ the Arkad’yev- Marx principle of...P2, and hereafter the device operates like an ordinary GIN [pulse volt- age generator] according to the Arkad’yev- Marx principle. The Object of the...Invention The high-voltage pulse voltage generator, assembled according to the Arkad’yev- Marx arrangement, each stage of which incorporates reactive

  20. ACS: ALMA Common Software

    NASA Astrophysics Data System (ADS)

    Chiozzi, Gianluca; Šekoranja, Matej

    2013-02-01

    ALMA Common Software (ACS) provides a software infrastructure common to all ALMA partners and consists of a documented collection of common patterns and components which implement those patterns. The heart of ACS is based on a distributed Component-Container model, with ACS Components implemented as CORBA objects in any of the supported programming languages. ACS provides common CORBA-based services such as logging, error and alarm management, configuration database and lifecycle management. Although designed for ALMA, ACS can and is being used in other control systems and distributed software projects, since it implements proven design patterns using state of the art, reliable technology. It also allows, through the use of well-known standard constructs and components, that other team members whom are not authors of ACS easily understand the architecture of software modules, making maintenance affordable even on a very large project.

  1. Voltage tunable dielectric properties of oxides at nanoscale: TiO2 and CeO2 as model systems

    NASA Astrophysics Data System (ADS)

    Prakash, T.; Tamil Selvan, A.; Suraiya Begum, S. N.

    2016-03-01

    Carrier transport through electrically active grain boundaries has been studied under biased condition using Solartron 1260 impedance/gain phase analyzer with an applied AC potential of 250 mV in the frequency range 1 Hz-1 MHz for nanocrystalline TiO2 and CeO2 as the model systems. Prior to the measurement both the materials were converted into cylindrical pellets with (8 mm diameter and 1 mm thick) by applying uni-axial pressure of 4 ton using a hydraulic press, then sintered at 300, 450 and 600 °C for 30 min for TiO2 sample and for the case of CeO2 it was done at 300, 600 and 900 °C for 30 min. Further, they were characterized using powder X-ray diffractometer (XRD) and transmission electron microscopy (TEM) to know the crystal structure, average crystallite size and morphology. The impedance measurements were performed at room temperature under applied DC bias voltages from 0 to 3 V in the periodic increment of 0.2 V. The observed applied bias voltage effect on dielectric constant of both the systems was analyzed with 'grain boundary double Schottky potential barrier height model' for different grain sizes. The percentage of voltage tunable dielectric constant (T%) as a function of frequency was estimated for all the grain sizes and it was found to be increase with reduction of grain size. Our experimental findings reveal the possibilities of utilizing these nanocrystals as a potential active material for phased array antenna since both the samples exhibits T% = 85% at 100 Hz frequency.

  2. Analysis of AC Low-Voltage Energy Harvesting

    DTIC Science & Technology

    2014-09-01

    the material. This phenomenon was first discovered by the Curie brothers in 1880. This material property gives the ability to turn vibrations into an...material. This phenomenon was first discovered by the Curie brothers in 1880. This material property gives the ability to turn vibrations into an...generates an electric charge proportional to mechanical stress. This phenomenon was first discovered by the Curie brothers in 1880. This material

  3. AC transport and full-counting statistics of molecular junctions in the weak electron-vibration coupling regime

    NASA Astrophysics Data System (ADS)

    Ueda, A.; Utsumi, Y.; Tokura, Y.; Entin-Wohlman, O.; Aharony, A.

    2017-03-01

    The coupling of the charge carriers passing through a molecule bridging two bulky conductors with local vibrational modes of the molecule gives rise to distinct features in the electronic transport properties on one hand and to nonequilibrium features in the vibrations' properties, e.g., their population, on the other. Here we explore theoretically a generic model for a molecular junction biased by an arbitrary dc voltage in the weak-coupling regime. We succinctly summarize parts of our past work related to the signature of the electron-vibration interaction on the full-counting statistics of the current fluctuations (i.e., the cumulant generating-function of the current correlations). In addition, we provide a novel account of the response to an ac field exerted on the junction (on top of the dc bias voltage); in particular, we study the nonequilibrium distribution and the displacement fluctuations of the vibrational modes. Remarkably, we find a behavior pattern that cannot be accounted for by classical forced oscillations. The calculations use the technique of nonequilibrium Green's functions and treat the electron-vibration coupling in perturbation theory, within the random-phase approximation when required.

  4. Dynamical Coulomb blockade of tunnel junctions driven by alternating voltages

    NASA Astrophysics Data System (ADS)

    Grabert, Hermann

    2015-12-01

    The theory of the dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that, for standard setups where an external voltage is applied to a tunnel junction via an impedance, time-dependent driving entails an excitation of the modes of the electromagnetic environment by the applied voltage. Previous approaches for ac driven circuits need to be extended to account for the driven bath modes. A unitary transformation involving also the variables of the electromagnetic environment is introduced which allows us to split off the time dependence from the Hamiltonian in the absence of tunneling. This greatly simplifies perturbation-theoretical calculations based on treating the tunneling Hamiltonian as a perturbation. In particular, the average current flowing in the leads of the tunnel junction is studied. Explicit results are given for the case of an applied voltage with a constant dc part and a sinusoidal ac part. The connection with standard dynamical Coulomb blockade theory for constant applied voltage is established. It is shown that an alternating voltage source reveals significant additional effects caused by the electromagnetic environment. The hallmark of the dynamical Coulomb blockade in ac driven devices is a suppression of higher harmonics of the current by the electromagnetic environment. The theory presented basically applies to all tunneling devices driven by alternating voltages.

  5. ac electroosmosis in rectangular microchannels.

    PubMed

    Campisi, Michele; Accoto, Dino; Dario, Paolo

    2005-11-22

    Motivated by the growing interest in ac electroosmosis as a reliable no moving parts strategy to control fluid motion in microfluidic devices for biomedical applications, such as lab-on-a-chip, we study transient and steady-state electrokinetic phenomena (electroosmosis and streaming currents) in infinitely extended rectangular charged microchannels. With the aid of Fourier series and Laplace transforms we provide a general formal solution of the problem, which is used to study the time-dependent response to sudden ac applied voltage differences in case of finite electric double layer. The Debye-Huckel approximation has been adopted to allow for an algebraic solution of the Poisson-Boltzmann problem in Fourier space. We obtain the expressions of flow velocity profiles, flow rates, streaming currents, as well as expressions of the complex hydraulic and electrokinetic conductances. We analyze in detail the dependence of the electrokinetic conductance on the extension of linear dimensions relative to the Debye length, with an eye on finite electric double layer effects.

  6. ac electroosmosis in rectangular microchannels

    NASA Astrophysics Data System (ADS)

    Campisi, Michele; Accoto, Dino; Dario, Paolo

    2005-11-01

    Motivated by the growing interest in ac electroosmosis as a reliable no moving parts strategy to control fluid motion in microfluidic devices for biomedical applications, such as lab-on-a-chip, we study transient and steady-state electrokinetic phenomena (electroosmosis and streaming currents) in infinitely extended rectangular charged microchannels. With the aid of Fourier series and Laplace transforms we provide a general formal solution of the problem, which is used to study the time-dependent response to sudden ac applied voltage differences in case of finite electric double layer. The Debye-Hückel approximation has been adopted to allow for an algebraic solution of the Poisson-Boltzmann problem in Fourier space. We obtain the expressions of flow velocity profiles, flow rates, streaming currents, as well as expressions of the complex hydraulic and electrokinetic conductances. We analyze in detail the dependence of the electrokinetic conductance on the extension of linear dimensions relative to the Debye length, with an eye on finite electric double layer effects.

  7. Biasing of Capacitive Micromachined Ultrasonic Transducers.

    PubMed

    Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

    2017-02-01

    Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (<5 [Formula: see text]) HV generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm(2)) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches

  8. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    DOEpatents

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  9. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

    DOE PAGES

    Liu, Liang; Niu, Jiasen; Xiang, Li; ...

    2014-11-18

    We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states,more » while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.« less

  10. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly

    SciTech Connect

    Liu, Liang; Niu, Jiasen; Xiang, Li; Wei, Jian; Li, D. -L.; Feng, J. -F.; Han, X. -F.; Zhang, X. -G.; Coey, J. M. D.

    2014-11-18

    We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states, while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.

  11. Batteries: Widening voltage windows

    NASA Astrophysics Data System (ADS)

    Xu, Kang; Wang, Chunsheng

    2016-10-01

    The energy output of aqueous batteries is largely limited by the narrow voltage window of their electrolytes. Now, a hydrate melt consisting of lithium salts is shown to expand such voltage windows, leading to a high-energy aqueous battery.

  12. Automatic voltage imbalance detector

    DOEpatents

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  13. Demonstrating the Correspondence Bias

    ERIC Educational Resources Information Center

    Howell, Jennifer L.; Shepperd, James A.

    2011-01-01

    Among the best-known and most robust biases in person perception is the correspondence bias--the tendency for people to make dispositional, rather than situational, attributions for an actor's behavior. The correspondence bias appears in virtually every social psychology textbook and in many introductory psychology textbooks, yet the authors'…

  14. Oaths and hypothetical bias.

    PubMed

    Stevens, T H; Tabatabaei, Maryam; Lass, Daniel

    2013-09-30

    Results from experiments using an oath to eliminate hypothetical bias in stated preference valuation are presented. An oath has several potential advantages relative to other methods for reducing hypothetical bias. Our empirical results suggest that with an oath, mean hypothetical payments are not different from mean actual payments and that when controlling for experimental participants' characteristics using regression analyses, the oath eliminated hypothetical bias.

  15. Recalibrating Academic Bias

    ERIC Educational Resources Information Center

    Yancey, George

    2012-01-01

    Whether political and/or religious academic bias exists is a question with important ramifications for the educational institutions. Those arguing for the presence of such bias contend that political conservatives and the highly religious in academia are marginalized and face discrimination. The question of academic bias tends to be cast in a…

  16. System and method for determining stator winding resistance in an AC motor

    DOEpatents

    Lu, Bin; Habetler, Thomas G.; Zhang, Pinjia; Theisen, Peter J.

    2011-05-31

    A system and method for determining stator winding resistance in an AC motor is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of an AC motor. The circuit includes at least one contactor and at least one switch to control current flow and terminal voltages in the AC motor. The system also includes a controller connected to the circuit and configured to modify a switching time of the at least one switch to create a DC component in an output of the system corresponding to an input to the AC motor and determine a stator winding resistance of the AC motor based on the injected DC component of the voltage and current.

  17. Mixed voltage VLSI design

    NASA Technical Reports Server (NTRS)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  18. Fluid simulation of the bias effect in inductive/capacitive discharges

    SciTech Connect

    Zhang, Yu-Ru; Gao, Fei; Li, Xue-Chun; Wang, You-Nian; Bogaerts, Annemie

    2015-11-15

    Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.

  19. Capabilities of the new “Universal” AC-DC monitor for electropenetrography (EPG)

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Electropenetrography (EPG), invented over 50 years ago, is the most rigorous and important means of studying the feeding of piercing-sucking crop pests. The 1st-generation monitor (or AC monitor) used AC applied signal voltage and had fixed amplifier sensitivity (input resistor or Ri) of 106 Ohms. T...

  20. Variable-frequency inverter controls torque, speed, and braking in ac induction motors

    NASA Technical Reports Server (NTRS)

    Nola, F. J.

    1974-01-01

    Dc to ac inverter provides optimum frequency and voltage to ac induction motor, in response to different motor-load and speed requirements. Inverter varies slip frequency of motor in proportion to required torque. Inverter protects motor from high current surges, controls negative slip to apply braking, and returns energy stored in momentum of load to dc power source.

  1. Queries for Bias Testing

    NASA Technical Reports Server (NTRS)

    Gordon, Diana F.

    1992-01-01

    Selecting a good bias prior to concept learning can be difficult. Therefore, dynamic bias adjustment is becoming increasingly popular. Current dynamic bias adjustment systems, however, are limited in their ability to identify erroneous assumptions about the relationship between the bias and the target concept. Without proper diagnosis, it is difficult to identify and then remedy faulty assumptions. We have developed an approach that makes these assumptions explicit, actively tests them with queries to an oracle, and adjusts the bias based on the test results.

  2. High Voltage SPT Performance

    NASA Technical Reports Server (NTRS)

    Manzella, David; Jacobson, David; Jankovsky, Robert

    2001-01-01

    A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

  3. Novel dielectric reduces corona breakdown in ac capacitors

    NASA Technical Reports Server (NTRS)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  4. Microfabricated AC impedance sensor

    DOEpatents

    Krulevitch, Peter; Ackler, Harold D.; Becker, Frederick; Boser, Bernhard E.; Eldredge, Adam B.; Fuller, Christopher K.; Gascoyne, Peter R. C.; Hamilton, Julie K.; Swierkowski, Stefan P.; Wang, Xiao-Bo

    2002-01-01

    A microfabricated instrument for detecting and identifying cells and other particles based on alternating current (AC) impedance measurements. The microfabricated AC impedance sensor includes two critical elements: 1) a microfluidic chip, preferably of glass substrates, having at least one microchannel therein and with electrodes patterned on both substrates, and 2) electrical circuits that connect to the electrodes on the microfluidic chip and detect signals associated with particles traveling down the microchannels. These circuits enable multiple AC impedance measurements of individual particles at high throughput rates with sufficient resolution to identify different particle and cell types as appropriate for environmental detection and clinical diagnostic applications.

  5. "Catching" Social Bias.

    PubMed

    Skinner, Allison L; Meltzoff, Andrew N; Olson, Kristina R

    2017-02-01

    Identifying the origins of social bias is critical to devising strategies to overcome prejudice. In two experiments, we tested the hypothesis that young children can catch novel social biases from brief exposure to biased nonverbal signals demonstrated by adults. Our results are consistent with this hypothesis. In Experiment 1, we found that children who were exposed to a brief video depicting nonverbal bias in favor of one individual over another subsequently explicitly preferred, and were more prone to behave prosocially toward, the target of positive nonverbal signals. Moreover, in Experiment 2, preschoolers generalized such bias to other individuals. The spread of bias observed in these experiments lays a critical foundation for understanding the way that social biases may develop and spread early in childhood.

  6. Renormalized halo bias

    SciTech Connect

    Assassi, Valentin; Baumann, Daniel; Green, Daniel; Zaldarriaga, Matias E-mail: dbaumann@damtp.cam.ac.uk E-mail: matiasz@ias.edu

    2014-08-01

    This paper provides a systematic study of renormalization in models of halo biasing. Building on work of McDonald, we show that Eulerian biasing is only consistent with renormalization if non-local terms and higher-derivative contributions are included in the biasing model. We explicitly determine the complete list of required bias parameters for Gaussian initial conditions, up to quartic order in the dark matter density contrast and at leading order in derivatives. At quadratic order, this means including the gravitational tidal tensor, while at cubic order the velocity potential appears as an independent degree of freedom. Our study naturally leads to an effective theory of biasing in which the halo density is written as a double expansion in fluctuations and spatial derivatives. We show that the bias expansion can be organized in terms of Galileon operators which aren't renormalized at leading order in derivatives. Finally, we discuss how the renormalized bias parameters impact the statistics of halos.

  7. High voltage spark carbon fiber detection system

    NASA Technical Reports Server (NTRS)

    Yang, L. C.

    1980-01-01

    The pulse discharge technique was used to determine the length and density of carbon fibers released from fiber composite materials during a fire or aircraft accident. Specifications are given for the system which uses the ability of a carbon fiber to initiate spark discharge across a high voltage biased grid to achieve accurate counting and sizing of fibers. The design of the system was optimized, and prototype hardware proved satisfactory in laboratory and field tests.

  8. AC power generation from microbial fuel cells

    NASA Astrophysics Data System (ADS)

    Lobo, Fernanda Leite; Wang, Heming; Forrestal, Casey; Ren, Zhiyong Jason

    2015-11-01

    Microbial fuel cells (MFCs) directly convert biodegradable substrates to electricity and carry good potential for energy-positive wastewater treatment. However, the low and direct current (DC) output from MFC is not usable for general electronics except small sensors, yet commercial DC-AC converters or inverters used in solar systems cannot be directly applied to MFCs. This study presents a new DC-AC converter system for MFCs that can generate alternating voltage in any desired frequency. Results show that AC power can be easily achieved in three different frequencies tested (1, 10, 60 Hz), and no energy storage layer such as capacitors was needed. The DC-AC converter efficiency was higher than 95% when powered by either individual MFCs or simple MFC stacks. Total harmonic distortion (THD) was used to investigate the quality of the energy, and it showed that the energy could be directly usable for linear electronic loads. This study shows that through electrical conversion MFCs can be potentially used in household electronics for decentralized off-grid communities.

  9. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    NASA Astrophysics Data System (ADS)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  10. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    SciTech Connect

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  11. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    SciTech Connect

    Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

    2015-08-15

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  12. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    DOE PAGES

    Patel, N.; Branch, D. W.; Schamiloglu, E.; ...

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to bothmore » crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  13. AC magnetohydrodynamic microfluidic switch

    SciTech Connect

    Lemoff, A V; Lee, A P

    2000-03-02

    A microfluidic switch has been demonstrated using an AC Magnetohydrodynamic (MHD) pumping mechanism in which the Lorentz force is used to pump an electrolytic solution. By integrating two AC MHD pumps into different arms of a Y-shaped fluidic circuit, flow can be switched between the two arms. This type of switch can be used to produce complex fluidic routing, which may have multiple applications in {micro}TAS.

  14. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  15. Microwave integrated circuit for Josephson voltage standards

    NASA Technical Reports Server (NTRS)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  16. High-Voltage Droplet Dispenser Developed

    NASA Technical Reports Server (NTRS)

    Eichenberg, Dennis J.; VanderWal, Randy L.

    2001-01-01

    Various techniques have been applied to deploying individual droplets for many applications, such as the study of the combustion of liquid fuels. Isolated droplet studies are useful in that they allow phenomena to be studied under well-controlled and simplified conditions. A high-voltage droplet dispenser has been developed that is extremely effective in dispensing a wide range of droplets. The dispenser is quite unique in that it utilizes a droplet bias voltage, as well as an ionization pulse, to release the droplet. The droplet is deployed from the end of a needle. A flat-tipped, stainless steel needle attached to a syringe dispenses a known value of liquid that hangs on the needle tip. Somewhat below the droplet is an annular ring electrode. A bias voltage, followed by a voltage pulse, is applied to attract the droplet sufficiently to pull it off the needle. The droplet and needle are oppositely charged relative to the annular electrode. The needle is negatively charged, and the annular ring is positively charged.

  17. Basic study of transient breakdown voltage in solid dielectric cables

    NASA Astrophysics Data System (ADS)

    Bahder, G.; Sosnowski, M.; Katz, C.

    1980-09-01

    A comprehensive review of the technical and scientific publications relating to crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR) insulated cables revealed that there is very little known with respect to the life expectancy, the final factory voltage test background and the mechanism of voltage breakdown of these cables. A new methodology for the investigation of breakdown voltages of XLPE and EPR insulated cables was developed which is based on the investigation of breakdown voltages at various voltage transients such as unipolarity pulses and dual-polarity pulses, and a.c. voltage at power and high frequency. Also, a new approach to statistical testing was developed which allows one to establish a correlation among the breakdown voltages obtained with various voltage transients. Finally, a method for the determination of threshold voltage regardless of the magnitude of apparent charge was developed. A model of breakdown and electrical aging of XLPE and EPR insulated cables was developed as well as life expectancy characteristics for high voltage stress XLPE insulated cables operated in a dry environment at room temperature and at 900 C.

  18. Development of an AC/DC transfer system at the INTI

    SciTech Connect

    Laiz, H.; Garcia, R.; Cioffi, J.

    1994-12-31

    This paper describes the work done at the INTI in order to improve the AC/DC transfer system. Thermal voltage and current converters were constructed by means of serial and parallel arrangements of Single Junction Thermal Converters. The frequency response of both arrangements are presented as well as a description of the design of the high voltage resistors and shunts.

  19. Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

  20. AC plasma anemometer—characteristics and design

    NASA Astrophysics Data System (ADS)

    Marshall, Curtis; Matlis, Eric; Corke, Thomas; Gogineni, Sivaram

    2015-08-01

    The characteristics and design of a high-bandwidth flow sensor that uses an AC glow discharge (plasma) as the sensing element is presented. The plasma forms in the air gap between two protruding low profile electrodes attached to a probe body. The output from the anemometer is an amplitude modulated version of the AC voltage input that contains information about the mean and fluctuating velocity components. The anemometer circuitry includes resistance and capacitance elements that simulate a dielectric-barrier to maintain a diffuse plasma, and a constant-current feedback control that maintains operation within the desired glow discharge regime over an extended range of air velocities. Mean velocity calibrations are demonstrated over a range from 0 to 140 m s-1. Over this velocity range, the mean output voltage varied linearly with air velocity, providing a constant static sensitivity. The effect of the electrode gap and input AC carrier frequency on the anemometer static sensitivity and dynamic response are investigated. Experiments are performed to compare measurements obtained with a plasma sensor operating at two AC carrier frequencies against that of a constant-temperature hot-wire. All three sensors were calibrated against the same known velocity reference. An uncertainty based on the standard deviation of the velocity calibration fit was applied to the mean and fluctuating velocity measurements of the three sensors. The motivation is not to replace hot-wires as a general measurement tool, but rather as an alternative to hot-wires in harsh environments or at high Mach numbers where they either have difficulty in surviving or lack the necessary frequency response.

  1. Effect of ordered array of magnetic dots on the dynamics of Josephson vortices in stacked SNS Josephson junctions under DC and AC current

    NASA Astrophysics Data System (ADS)

    Berdiyorov, Golibjon R.; Savel'ev, Sergey; Kusmartsev, Feodor V.; Peeters, François M.

    2015-11-01

    We use the anisotropic time-dependent Ginzburg-Landau theory to investigate the effect of a square array of out-of-plane magnetic dots on the dynamics of Josephson vortices (fluxons) in artificial stacks of superconducting-normal-superconducting (SNS) Josephson junctions in the presence of external DC and AC currents. Periodic pinning due to the magnetic dots distorts the triangular lattice of fluxons and results in the appearance of commensurability features in the current-voltage characteristics of the system. For the larger values of the magnetization, additional peaks appear in the voltage-time characteristics of the system due to the creation and annihilation of vortex-antivortex pairs. Peculiar changes in the response of the system to the applied current is found resulting in a "superradiant" vortex-flow state at large current values, where a rectangular lattice of moving vortices is formed. Synchronizing the motion of fluxons by adding a small ac component to the biasing dc current is realized. However, we found that synchronization becomes difficult for large magnetization of the dots due to the formation of vortex-antivortex pairs.

  2. Spectral response measurements of multijunction solar cells with low shunt resistance and breakdown voltages.

    PubMed

    Babaro, Juan P; West, Kevin G; Hamadani, Behrang H

    2016-11-01

    Spectral response measurements of germanium-based triple-junction solar cells were performed under a variety of light and voltage bias conditions. Two of the three junctions exhibited voltage and light bias dependent artifacts in their measured responses, complicating the true spectral response of these junctions. To obtain more insight into the observed phenomena, a set of current-voltage measurement combinations were also performed on the solar cells under identical illumination conditions, and the data were used in the context of a diode-based analytical model to calculate and predict the spectral response behavior of each junction as a function of voltage. The analysis revealed that both low shunt resistance and low breakdown voltages in two of the three junctions influenced the measured quantum efficiency of all three junctions. The data and the modeling suggest that combination of current-voltage measurements under various light bias sources can reveal important information about the spectral response behavior in multijunction solar cells.

  3. Dynamic performance of a STATCON at an HVDC inverter feeding a very weak AC system

    SciTech Connect

    Zhuang, Y.; Menzies, R.W.; Nayak, O.B.; Turanli, H.M.

    1996-04-01

    This paper investigates the dynamic performance of the advanced static var compensator or STATCON at a high voltage direct current (HVDC) converter terminal where the ac system has a very low short circuit ratio (SCR). The STATCON is based on a nine-level GTO thyristor inverter. The studies include operating characteristics of the STATCON under various ac and dc disturbances. The simulation results are compared with other types of reactive power compensation options available for such applications. It is shown that the STATCON has clear advantages over the other compensators, in areas such as; fault response time, voltage support ability, and dc recovery, while operating with very weak ac systems.

  4. Bias in clinical chemistry.

    PubMed

    Theodorsson, Elvar; Magnusson, Bertil; Leito, Ivo

    2014-01-01

    Clinical chemistry uses automated measurement techniques and medical knowledge in the interest of patients and healthy subjects. Automation has reduced repeatability and day-to-day variation considerably. Bias has been reduced to a lesser extent by reference measurement systems. It is vital to minimize clinically important bias, in particular bias within conglomerates of laboratories that measure samples from the same patients. Small and variable bias components will over time show random error properties and conventional random-error based methods for calculating measurement uncertainty can then be applied. The present overview of bias presents the general principles of error and uncertainty concepts, terminology and analysis, and suggests methods to minimize bias and measurement uncertainty in the interest of healthcare.

  5. Bias in research.

    PubMed

    Simundić, Ana-Maria

    2013-01-01

    By writing scientific articles we communicate science among colleagues and peers. By doing this, it is our responsibility to adhere to some basic principles like transparency and accuracy. Authors, journal editors and reviewers need to be concerned about the quality of the work submitted for publication and ensure that only studies which have been designed, conducted and reported in a transparent way, honestly and without any deviation from the truth get to be published. Any such trend or deviation from the truth in data collection, analysis, interpretation and publication is called bias. Bias in research can occur either intentionally or unintentionally. Bias causes false conclusions and is potentially misleading. Therefore, it is immoral and unethical to conduct biased research. Every scientist should thus be aware of all potential sources of bias and undertake all possible actions to reduce or minimize the deviation from the truth. This article describes some basic issues related to bias in research.

  6. Nonlinear studies of AC electrokinetic micropumps

    NASA Astrophysics Data System (ADS)

    Bruus, Henrik; Olesen, Laurits H.; Ajdari, Armand

    2006-03-01

    Recent experiments have demonstrated that AC electrokinetic micropumps permit integrable, local, and fast pumping (velocities ˜ mm/s) with low driving voltage of a few volts only. However, they also displayed many quantitative and qualitative discrepancies with existing theories. We therefore extend the latter theories to account for three experimentally relevant effects: (i) vertical confinement of the pumping channel, (ii) Faradaic currents from electrochemical reactions at the electrodes, and (iii) nonlinear surface capacitance of the Debye layer. We report here that these effects indeed affect the pump performance in a way that we can rationalize by physical arguments.

  7. Integrated Bypass Battery for ReverseBias Protection

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A,

    2002-01-01

    When a single solar cell of a series-connect string is placed in shadow, the entire array current is forced through that cell in reverse bias. Reverse bias current can lead to "hot-spot" heating, where the power produced by the unshadowed cells is dissipated as heat in the shadowed cell. Since occasional shadows are unavoidable in most applications, most solar arrays include shadow protection to prevent damage. In current practice, shadow protection is done with a "bypass diode" on each cell, to shunt the reverse bias current if a cell is shadowed. A new method of reverse bias protection is to use an Integral thin-film battery to provide voltage in the case of a shadowed cell. In this case, the shadowed cell continues to provide voltage during the transient shadow.

  8. Zero Voltage Soft Switching Duty Cycle Pulse Modulated High Frequency Inverter-Fed

    NASA Astrophysics Data System (ADS)

    Ishitobi, Manabu; Matsushige, Takayuki; Nakaoka, Mutsuo; Bessyo, Daisuke; Omori, Hideki; Terai, Haruo

    The utility grid voltage of commercial AC power source in Japan and USA is 100V, but in other Asian and European countries, it is 220V. In recent years, in Japan 200V outputted single-phase three-wire system begins to be used for high power applications. In 100V utility AC power applications and systems, an active voltage clamped quasi-resonant inverter circuit topology sing IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped asymmetrical soft switching PWM high-frequency inverter type AC-DC converter using IGBTs which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. The zero voltage soft switching inverter treated here can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull (SEPP) type soft switching PWM inverter are evaluated and discussed for 100V and 200V common use consumer microwave oven. The harmonic line current components in the utility AC power side of the AC-DC power converter with ZVS-PWM SEPP inverter are reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

  9. Interpretation biases in paranoia.

    PubMed

    Savulich, George; Freeman, Daniel; Shergill, Sukhi; Yiend, Jenny

    2015-01-01

    Information in the environment is frequently ambiguous in meaning. Emotional ambiguity, such as the stare of a stranger, or the scream of a child, encompasses possible good or bad emotional consequences. Those with elevated vulnerability to affective disorders tend to interpret such material more negatively than those without, a phenomenon known as "negative interpretation bias." In this study we examined the relationship between vulnerability to psychosis, measured by trait paranoia, and interpretation bias. One set of material permitted broadly positive/negative (valenced) interpretations, while another allowed more or less paranoid interpretations, allowing us to also investigate the content specificity of interpretation biases associated with paranoia. Regression analyses (n=70) revealed that trait paranoia, trait anxiety, and cognitive inflexibility predicted paranoid interpretation bias, whereas trait anxiety and cognitive inflexibility predicted negative interpretation bias. In a group comparison those with high levels of trait paranoia were negatively biased in their interpretations of ambiguous information relative to those with low trait paranoia, and this effect was most pronounced for material directly related to paranoid concerns. Together these data suggest that a negative interpretation bias occurs in those with elevated vulnerability to paranoia, and that this bias may be strongest for material matching paranoid beliefs. We conclude that content-specific biases may be important in the cause and maintenance of paranoid symptoms.

  10. Fabrication of alumina films with laminated structures by ac anodization

    PubMed Central

    Segawa, Hiroyo; Okano, Hironaga; Wada, Kenji; Inoue, Satoru

    2014-01-01

    Anodization techniques by alternating current (ac) are introduced in this review. By using ac anodization, laminated alumina films are fabricated. Different types of alumina films consisting of 50–200 nm layers were obtained by varying both the ac power supply and the electrolyte. The total film thickness increased with an increase in the total charge transferred. The thickness of the individual layers increased with the ac voltage; however, the anodization time had little effect on the film thickness. The laminated alumina films resembled the nacre structure of shells, and the different morphologies exhibited by bivalves and spiral shells could be replicated by controlling the rate of increase of the applied potentials. PMID:27877636

  11. Coupling effects in inductive discharges with radio frequency substrate biasing

    SciTech Connect

    Schulze, J.; Schuengel, E.; Czarnetzki, U.

    2012-01-09

    Low pressure inductively coupled plasmas (ICP) operated in neon at 27.12 MHz with capacitive substrate biasing (CCP) at 13.56 MHz are investigated by phase resolved optical emission spectroscopy, voltage, and current measurements. Three coupling mechanisms are found potentially limiting the separate control of ion energy and flux: (i) Sheath heating due to the substrate biasing affects the electron dynamics even at high ratios of ICP to CCP power. At fixed CCP power, (ii) the substrate sheath voltage and (iii) the amplitude as well as frequency of plasma series resonance oscillations of the RF current are affected by the ICP power.

  12. Basic study of transient breakdown voltage in solid dielectric cables. Final report

    SciTech Connect

    Bahder, G.; Sosnowski, M.; Katz, C.

    1980-09-01

    A comprehensive review of the technical and scientific publications relating to crosslinked polyethylene (XLPE) and ethylene propylene rubber (EPR) insulated cables revealed that there is very little known with respect to the life expectancy, the final factory voltage test background and the mechanism of voltage breakdown of these cables. In this study a new methodology for the investigation of breakdown voltages of XLPE and EPR insulated cables was developed which is based on the investigation of breakdown voltages at various voltage transients such as unipolarity pulses and dual-polarity pulses, and a.c. voltage at power and high frequency. Also, a new approach to statistical testing was developed which allows one to establish a correlation among the breakdown voltages obtained with various voltage transients. Finally, a method for the determination of threshold voltage regardless of the magnitude of apparent charge was developed. Extensive statistical testing of breakdown voltages was conducted using: impulses with front durations from approximately 1.5 to 1000 ..mu..s and times to half-values from 40 to 3000 ..mu..s; dual-polarity pulses consisting of d.c. voltage and standard impulse of opposite polarity; combined a.c. and d.c. voltages; and a.c. voltages at power and high frequencies. Based on the results of this testing, a model of breakdown and electrical aging of XLPE and EPR insulated cables was developed as well as life expectancy characteristics for high voltage stress XLPE insulated cables operated in a dry environment at room temperature and at 90/sup 0/C. Life expectancy characteristics for EPR insulated cables are approximated. A test procedure including requirements for full-reel factory voltage withstand and partial discharge testing of finished XLPE and EPR insulated cables is proposed. Cables that pass the proposed tests will exhibit a smaller rate of failure in service than cables tested in accordance with present practices.

  13. A Simple Design Method Based on Vector Control of AC Machines with LC Filter

    NASA Astrophysics Data System (ADS)

    Saito, Ryosuke; Kubota, Hisao

    This paper presents a simple voltage control system of AC machines using PWM voltage source inverter with output LC filters. By assuming a motor as a current source, the voltage is controlled by a simple proportional differential (PD) control. The vector control and PD control can be separately controlled in this system. A method for disturbance rejection is also described. The effectiveness of the proposed method is verified by simulations and experiments.

  14. The ac power line protection for an IEEE 587 Class B environment

    NASA Technical Reports Server (NTRS)

    Roehr, W. D.; Clark, O. M.

    1984-01-01

    The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.

  15. Power conditioning for low-voltage piezoelectric stack energy harvesters

    NASA Astrophysics Data System (ADS)

    Skow, E.; Leadenham, S.; Cunefare, K. A.; Erturk, A.

    2016-04-01

    Low-power vibration and acoustic energy harvesting scenarios typically require a storage component to be charged to enable wireless sensor networks, which necessitates power conditioning of the AC output. Piezoelectric beam-type bending mode energy harvesters or other devices that operate using a piezoelectric element at resonance produce high voltage levels, for which AC-DC converters and step-down DC-DC converters have been previously investigated. However, for piezoelectric stack energy harvesters operating off-resonance and producing low voltage outputs, a step-up circuit is required for power conditioning, such as seen in electromagnetic vibration energy scavengers, RF communications, and MEMS harvesters. This paper theoretically and experimentally investigates power conditioning of a low-voltage piezoelectric stack energy harvester.

  16. Installation considerations for IGBT AC drives

    SciTech Connect

    Skibinski, G.L.

    1997-06-01

    In the last four years, Adjustable Speed ac Drive (ASD) manufacturers have migrated from Bipolar Junction Transistor (BJT) semiconductors to Insulated Gate Bipolar Transistors (IGBTs) as the preferred Output switching device. The advantage of IGBTs over BJTs is that device rise and fall time switching capability is 5 - 10 times faster, resulting in lower device switching loss and a more efficient drive. However, for a similar motor cable length as the BJT drive, the faster output voltage risetime of the IGBT drive may increase the dielectric voltage stress on the motor and cable due to a phenomenon called reflected wave. Faster output dv/dt transitions of IGBT drives also increase the possibility for phenomenon such as increased Common Mode (CM) electrical noise, Electromagnetic Interference (EMI) problems and increased capacitive cable charging current problems. Also, recent experience suggests any Pulse Width Modulated (PWM) drive with a steep fronted output voltage wave form may increase motor shaft voltage and lead to a bearing current phenomenon known as fluting. This paper provides a basic understanding of these issues, as well as solutions, to insure a successful drive system installation.

  17. 4-bit Bipolar Triangle Voltage Waveform Generator Using Single-Flux-Quantum Circuit

    NASA Astrophysics Data System (ADS)

    Watanabe, Tomoki; Takahashi, Yoshitaka; Shimada, Hiroshi; Maezawa, Masaaki; Mizugaki, Yoshinao

    SFQ digital-to-analog converters (DACs) are one of the candidates for AC voltage standards. We have proposed SFQ-DACs based on frequency modulation (FM). Bipolar output is required for applications of AC voltage standards, while our previous SFQ-DACs generated only positive voltages. In this paper, we present our design of a 4-bit bipolar triangle voltage waveform generator comprising an SFQ-DAC. The waveform generator has two output ports. Synthesized half-period waveforms are alternately generated in one of the output ports. The bipolar output is realized by observing the differential voltage between the ports. We confirmed a 72-μVPP bipolar triangle voltage waveform at the frequency of 35.7 Hz.

  18. AC-electric field dependent electroformation of giant lipid vesicles.

    PubMed

    Politano, Timothy J; Froude, Victoria E; Jing, Benxin; Zhu, Yingxi

    2010-08-01

    Giant vesicles of larger than 5 microm, which have been of intense interest for their potential as drug delivery vehicles and as a model system for cell membranes, can be rapidly formed from a spin-coated lipid thin film under an electric field. In this work, we explore the AC-field dependent electroformation of giant lipid vesicles in aqueous media over a wide range of AC-frequency from 1 Hz to 1 MHz and peak-to-peak field strength from 0.212 V/mm to 40 V/mm between two parallel conducting electrode surfaces. By using fluorescence microscopy, we perform in-situ microscopic observations of the structural evolution of giant vesicles formed from spin-coated lipid films under varied uniform AC-electric fields. The real-time observation of bilayer bulging from the lipid film, vesicle growth and fusing further examine the critical role of AC-induced electroosmotic flow of surrounding fluids for giant vesicle formation. A rich AC-frequency and field strength phase diagram is obtained experimentally to predict the AC-electroformation of giant unilamellar vesicles (GUVs) of l-alpha-phosphatidylcholine, where a weak dependence of vesicle size on AC-frequency is observed at low AC-field voltages, showing decreased vesicle size with a narrowed size distribution with increased AC-frequency. Formation of vesicles was shown to be constrained by an upper field strength of 10 V/mm and an upper AC-frequency of 10 kHz. Within these parameters, giant lipid vesicles were formed predominantly unilamellar and prevalent across the entire electrode surfaces.

  19. The Bias Fallacy

    ERIC Educational Resources Information Center

    Linvill, Darren L.

    2013-01-01

    Do those who complain about liberal bias in higher education have any actionable point at all? Critics of the politicization of higher education claim that political partisanship in the classroom is pervasive and that it affects student learning. Although the existence of such partisanship has not been empirically proven, allegations of bias are…

  20. Tevatron AC dipole system

    SciTech Connect

    Miyamoto, R.; Kopp, S.E.; Jansson, A.; Syphers, M.J.; /Fermilab

    2007-06-01

    The AC dipole is an oscillating dipole magnet which can induce large amplitude oscillations without the emittance growth and decoherence. These properties make it a good tool to measure optics of a hadron synchrotron. The vertical AC dipole for the Tevatron is powered by an inexpensive high power audio amplifier since its operating frequency is approximately 20 kHz. The magnet is incorporated into a parallel resonant system to maximize the current. The use of a vertical pinger magnet which has been installed in the Tevatron made the cost relatively inexpensive. Recently, the initial system was upgraded with a more powerful amplifier and oscillation amplitudes up to 2-3{sigma} were achieved with the 980 GeV proton beam. This paper discusses details of the Tevatron AC dipole system and also shows its test results.

  1. Nonlinear resonance converse magnetoelectric effect modulated by voltage for the symmetrical magnetoelectric laminates under magnetic and thermal loadings

    NASA Astrophysics Data System (ADS)

    Zhou, Hao-Miao; Liu, Hui; Zhou, Yun; Hu, Wen-Wen

    2016-12-01

    Based on the tri-layer symmetrical magnetoelectric laminates, a equivalent circuit for the nonlinear resonance converse magnetoelectric coupling effect is established. Because the nonlinear thermo-magneto-mechanical constitutive equations of magnetostrictive material were introduced, a converse magnetoelectric coefficient model was derived from the equivalent circuit, which can describe the influence of bias electric field, bias magnetic field and ambient temperature on the resonance converse magnetoelectric coupling effect. Especially, the model can well predict the modulation effect of bias electric field/voltage on the magnetism of magnetoelectric composite or the converse magnetoelectric coefficient, which is absolutely vital in applications. Both of the converse magnetoelectric coefficient and the resonance frequency predicted by the model have good agreements with the existing experimental results in qualitatively and quantitatively, and the validity of the model is confirmed. On this basis, according to the model, the nonlinear trends of the resonance converse magnetoelectric effect under different bias voltages, bias magnetic fields and ambient temperatures are predicted. From the results, it can be found that the bias voltage can effectively modulate the curve of the resonance converse magnetoelectric coefficient versus bias magnetic field, and then change the corresponding optimal bias magnetic field of the maximum converse magnetoelectric coefficient; with the increasing volume ratio of piezoelectric layers, the modulation effect of bias voltage becomes more obvious; under different bias magnetic fields, the modulation effect of bias voltage on the converse magnetoelectric effect has nonvolatility in a wide temperature region.

  2. Optical voltage sensors: principle, problem and research proposal

    NASA Astrophysics Data System (ADS)

    Li, Changsheng

    2016-10-01

    Sensing principles and main problems to be solved for optical voltage sensors are briefly reviewed. Optical effects used for voltage sensing usually include electro-optic Pockels and Kerr effects, electro-gyration effect, elasto-optical effect, and electroluminescent effects, etc. In principle, typical optical voltage sensor is based on electro-optic Pockels crystals and closed-loop signal detection scheme. Main problems to be solved for optical voltage sensors include: how to remove influence of unwanted multiple optical effects on voltage sensing performance; how to select or develop a proper voltage sensing material and element; how to keep optical phase bias to be stable under temperature fluctuation and vibration; how to achieve dc voltage sensing, etc. In order to suppress the influence of unwanted optical effects and light beam coupling-related loss on voltage sensing signals, we may pay more attention to all-fiber and waveguide voltage sensors. Voltage sensors based on electroluminescent effects are also promising in some application fields due to their compact configuration, low cost and potential long-term reliability.

  3. Graphene nanoribbon devices at high bias.

    PubMed

    Han, Melinda Y; Kim, Philip

    2014-01-01

    We present the electron transport in graphene nanoribbons (GNRs) at high electric bias conduction. When graphene is patterned into a few tens of nanometer width of a ribbon shape, the carriers are confined to a quasi-one-dimensional (1D) system. Combining with the disorders in the system, this quantum confinement can lead into a transport gap in the energy spectrum of the GNRs. Similar to CNTs, this gap depends on the width of the GNR. In this review, we examine the electronic properties of lithographically fabricated GNRs, focusing on the high bias transport characteristics of GNRs as a function of density tuned by a gate voltage. We investigate the transport behavior of devices biased up to a few volts, a regime more relevant for electronics applications. We find that the high bias transport behavior in this limit can be described by hot electron scattered by the surface phonon emission, leading to a carrier velocity saturation. We also showed an enhanced current saturation effect in the GNRs with an efficient gate coupling. This effect results from the introduction of the charge neutrality point into the channel, and is similar to pinch-off in MOSFET devices. We also observe that heating effects in graphene at high bias are significant.

  4. Graphene nanoribbon devices at high bias

    NASA Astrophysics Data System (ADS)

    Han, Melinda Y.; Kim, Philip

    2014-02-01

    We present the electron transport in graphene nanoribbons (GNRs) at high electric bias conduction. When graphene is patterned into a few tens of nanometer width of a ribbon shape, the carriers are confined to a quasi-one-dimensional (1D) system. Combining with the disorders in the system, this quantum confinement can lead into a transport gap in the energy spectrum of the GNRs. Similar to CNTs, this gap depends on the width of the GNR. In this review, we examine the electronic properties of lithographically fabricated GNRs, focusing on the high bias transport characteristics of GNRs as a function of density tuned by a gate voltage. We investigate the transport behavior of devices biased up to a few volts, a regime more relevant for electronics applications. We find that the high bias transport behavior in this limit can be described by hot electron scattered by the surface phonon emission, leading to a carrier velocity saturation. We also showed an enhanced current saturation effect in the GNRs with an efficient gate coupling. This effect results from the introduction of the charge neutrality point into the channel, and is similar to pinch-off in MOSFET devices. We also observe that heating effects in graphene at high bias are significant.

  5. Voltage correction power flow

    SciTech Connect

    Rajicic, D.; Ackovski, R.; Taleski, R. . Dept. of Electrical Engineering)

    1994-04-01

    A method for power flow solution of weakly meshed distribution and transmission networks is presented. It is based on oriented ordering of network elements. That allows an efficient construction of the loop impedance matrix and rational organization of the processes such as: power summation (backward sweep), current summation (backward sweep) and node voltage calculation (forward sweep). The first step of the algorithm is calculation of node voltages on the radial part of the network. The second step is calculation of the breakpoint currents. Then, the procedure continues with the first step, which is preceded by voltage correction. It is illustrated that using voltage correction approach, the iterative process of weakly meshed network voltage calculation is faster and more reliable.

  6. Voltage verification unit

    DOEpatents

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  7. Local Dynamic Reactive Power for Correction of System Voltage Problems

    SciTech Connect

    Kueck, John D; Rizy, D Tom; Li, Fangxing; Xu, Yan; Li, Huijuan; Adhikari, Sarina; Irminger, Philip

    2008-12-01

    Distribution systems are experiencing outages due to a phenomenon known as local voltage collapse. Local voltage collapse is occurring in part because modern air conditioner compressor motors are much more susceptible to stalling during a voltage dip than older motors. These motors can stall in less than 3 cycles (.05s) when a fault, such as on the sub-transmission system, causes voltage to sag to 70 to 60%. The reasons for this susceptibility are discussed in the report. During the local voltage collapse, voltages are depressed for a period of perhaps one or two minutes. There is a concern that these local events are interacting together over larger areas and may present a challenge to system reliability. An effective method of preventing local voltage collapse is the use of voltage regulation from Distributed Energy Resources (DER) that can supply or absorb reactive power. DER, when properly controlled, can provide a rapid correction to voltage dips and prevent motor stall. This report discusses the phenomenon and causes of local voltage collapse as well as the control methodology we have developed to counter voltage sag. The problem is growing because of the use of low inertia, high efficiency air conditioner (A/C) compressor motors and because the use of electric A/C is growing in use and becoming a larger percentage of system load. A method for local dynamic voltage regulation is discussed which uses reactive power injection or absorption from local DER. This method is independent, rapid, and will not interfere with conventional utility system voltage control. The results of simulations of this method are provided. The method has also been tested at the ORNL s Distributed Energy Communications and Control (DECC) Laboratory using our research inverter and synchronous condenser. These systems at the DECC Lab are interconnected to an actual distribution system, the ORNL distribution system, which is fed from TVA s 161kV sub-transmission backbone. The test results

  8. Derivation of Instantaneous Wye and Zero-Phase Sequence Voltages from Line-Line Voltages in Unbalanced 3-Phase 3-Wire Systems and Application of This Method to 3-Phase PWM Converter Control

    NASA Astrophysics Data System (ADS)

    Yuzurihara, Itsuo; Kawamura, Atsuo

    In general, voltage imbalances in 3-phase AC power systems are inevitable. 3-Phase PWM (Pulse Width Modulation) converter used in 3-wire systems are generally designed for use under limited imbalances of input voltages, and problems such as input current distortion, deterioration of output properties, degradation of efficiency and failure may occur in some cases. These problems cause severe damages to industries in some cases, for example, semiconductor production machines: SEMI defined “SEMI F47-0200” and “SEMI F47-0706” standards that have to be satisfied to realize voltage sag immunity. In order to compensate the remained problems due to the unbalanced input voltages, particular storage devices are designed additionally for conventional converters. This paper proposes that the determination of both the instantaneous zero-phase sequence voltage and wye voltages is essential for 3-phase PWM converter control used for a 3-wire system to keep its output rated under occasional or long-term voltage imbalances in an AC system. This paper also describes a general new method to derive the components of the voltages of instantaneous wye and zero-phase sequence voltage from line-line voltages of a 3-wire system. This paper also describes a method to apply the voltages to control the converter. The results obtained on implementation verify that this new converter keeps its output rated under unbalanced conditions wider than those defined by SEMIs without particular storage devices as far as the AC voltages are remained live.

  9. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    DOE PAGES

    Vizkelethy, G.; King, M. P.; Aktas, O.; ...

    2016-12-02

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  10. Extending membrane pore lifetime with AC fields: A modeling study

    NASA Astrophysics Data System (ADS)

    Garner, Allen L.; Bogdan Neculaes, V.

    2012-07-01

    AC (sinusoidal) fields with frequencies from kilohertz to gigahertz have been used for gene delivery. To understand the impact of AC fields on electroporation dynamics, we couple a nondimensionalized Smoluchowski equation to an exact representation of the cell membrane voltage obtained solving the Laplace equation. The slope of the pore energy function, dφ/dr, with respect to pore radius is critical in predicting pore dynamics in AC fields because it can vary from positive, inducing pore shrinkage, to negative, driving pore growth. Specifically, the net sign of the integral of dφ/dr over time determines whether the average pore size grows (negative), shrinks (positive), or oscillates (zero) indefinitely about a steady-state radius, rss. A simple analytic relationship predicting the amplitude of the membrane voltage necessary for this behavior agrees well with simulation for frequencies from 500 kHz to 5 MHz for rss < 10 nm. For larger pore size (rss > 10 nm), dφ/dr oscillates about a negative value, suggesting that a net creation of pores may be necessary to maintain a constant pore size. In both scenarios, the magnitude of rss depends only upon the amplitude of the membrane voltage and not directly upon the applied field frequency other than the relationship between the amplitudes of the applied field and membrane voltage.

  11. ac electroosmotic pumping induced by noncontact external electrodes.

    PubMed

    Wang, Shau-Chun; Chen, Hsiao-Ping; Chang, Hsueh-Chia

    2007-09-21

    Electroosmotic (EO) pumps based on dc electroosmosis is plagued by bubble generation and other electrochemical reactions at the electrodes at voltages beyond 1 V for electrolytes. These disadvantages limit their throughput and offset their portability advantage over mechanical syringe or pneumatic pumps. ac electroosmotic pumps at high frequency (>100 kHz) circumvent the bubble problem by inducing polarization and slip velocity on embedded electrodes,1 but they require complex electrode designs to produce a net flow. We report a new high-throughput ac EO pump design based on induced-polarization on the entire channel surface instead of just on the electrodes. Like dc EO pumps, our pump electrodes are outside of the load section and form a cm-long pump unit consisting of three circular reservoirs (3 mm in diameter) connected by a 1x1 mm channel. The field-induced polarization can produce an effective Zeta potential exceeding 1 V and an ac slip velocity estimated as 1 mmsec or higher, both one order of magnitude higher than earlier dc and ac pumps, giving rise to a maximum throughput of 1 mulsec. Polarization over the entire channel surface, quadratic scaling with respect to the field and high voltage at high frequency without electrode bubble generation are the reasons why the current pump is superior to earlier dc and ac EO pumps.

  12. AC/RF Superconductivity

    SciTech Connect

    Ciovati, Gianluigi

    2015-02-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  13. Biased predecision processing.

    PubMed

    Brownstein, Aaron L

    2003-07-01

    Decision makers conduct biased predecision processing when they restructure their mental representation of the decision environment to favor one alternative before making their choice. The question of whether biased predecision processing occurs has been controversial since L. Festinger (1957) maintained that it does not occur. The author reviews relevant research in sections on theories of cognitive dissonance, decision conflict, choice certainty, action control, action phases, dominance structuring, differentiation and consolidation, constructive processing, motivated reasoning, and groupthink. Some studies did not find evidence of biased predecision processing, but many did. In the Discussion section, the moderators are summarized and used to assess the theories.

  14. Low voltage to high voltage level shifter and related methods

    NASA Technical Reports Server (NTRS)

    Mentze, Erik J. (Inventor); Hess, Herbert L. (Inventor); Buck, Kevin M. (Inventor); Cox, David F. (Inventor)

    2006-01-01

    A shifter circuit comprises a high and low voltage buffer stages and an output buffer stage. The high voltage buffer stage comprises multiple transistors arranged in a transistor stack having a plurality of intermediate nodes connecting individual transistors along the stack. The transistor stack is connected between a voltage level being shifted to and an input voltage. An inverter of this stage comprises multiple inputs and an output. Inverter inputs are connected to a respective intermediate node of the transistor stack. The low voltage buffer stage has an input connected to the input voltage and an output, and is operably connected to the high voltage buffer stage. The low voltage buffer stage is connected between a voltage level being shifted away from and a lower voltage. The output buffer stage is driven by the outputs of the high voltage buffer stage inverter and the low voltage buffer stage.

  15. Single Event Transients in Low Voltage Dropout (LVDO) Voltage Regulators

    NASA Technical Reports Server (NTRS)

    LaBel, K.; Karsh, J.; Pursley, S.; Kleyner, I.; Katz, R.; Poivey, C.; Kim, H.; Seidleck, C.

    2006-01-01

    This viewgraph presentation reviews the use of Low Voltage Dropout (LVDO) Voltage Regulators in environments where heavy ion induced Single Event Transients are a concern to the designers.Included in the presentation are results of tests of voltage regulators.

  16. A New Design Method of AC Filter for Static Var Compensator

    NASA Astrophysics Data System (ADS)

    Tamura, Yuji; Irokawa, Shoichi; Takeda, Hideo; Takagi, Kikuo; Noro, Yasuhiro; Ametani, Akihiro

    A new approach of the AC filter design for the SVC (Static Var Compensator) is proposed in this paper. When the SVC consists of TCR(s) (Thyristor Controlled Reactor(s)) or TCT(s) (Thyristor Controlled Transformer(s)) and the AC filter(s), it is required to design AC filter(s) carefully to meet regulation level of harmonic voltage and current at the connection point of the SVC. In general, the AC filter design may require many iterative calculations of the harmonic performance by changing electrical parameters of the AC filter until all the harmonic voltage and current performances at the connection point of the SVC meet the regulation level on various conditions in terms of the filter de-tuning cases and the AC power system conditions. In this respect a new AC filter design approach is proposed, which is innovative on evaluation method of the performance to predetermine the permissible range of the AC filter harmonic impedance on the complex plane. By using this method, the iterations of the calculation can be reduced and it enables more efficient process of the design providing clear accountability of the decision of AC filter parameters.

  17. Bias and self-bias of magnetic macroparticle filters for cathodic arc plasmas

    SciTech Connect

    Byon, Eungsun; Anders, Andre

    2002-12-01

    Curved magnetic filters are often used for the removal of macroparticles from cathodic arc plasmas. This study addresses the need to further reduce losses and improving plasma throughput. The central figure of merit is the system coefficient Kappa defined as filtered ion current normalized by the plasma-producing arc current. The coefficient Kappa is investigated as a function of DC and pulsed magnetic field operation, magnetic field strength, external electric bias, and arc amplitude. It increases with positive filter bias but saturates at about 15 V for relatively low magnetic field ({approx}10 mT), whereas stronger magnetic fields lead to higher Kappa with saturation at about 25 V. Further increase of positive bias reduces Kappa. These findings are true for both pulsed and DC filters. Bias of pulsed filters has been realized using the voltage drop across a self-bias resistor, eliminating the need for a separate bias circuit. Almost 100 A of filtered copper ions have been obtained in pulse d mode, corresponding to Kappa approximately equal to 0.04. The results are interpreted by a simplified potential trough model.

  18. Statistics of voltage fluctuations in resistively shunted Josephson junctions

    NASA Astrophysics Data System (ADS)

    Marthaler, Michael; Golubev, Dmitry; Utsumi, Yasuhiro; Schön, Gerd

    2011-03-01

    The intrinsic nonlinearity of Josephson junctions converts Gaussian current noise in the input into non-Gaussian voltage noise in the output. For a resistively shunted Josephson junction with white input noise we determine numerically exactly the properties of the few lowest cumulants of the voltage fluctuations, and we derive analytical expressions for these cumulants in several important limits. The statistics of the voltage fluctuations is found to be Gaussian at bias currents well above the Josephson critical current, but Poissonian at currents below the critical value. In the transition region close to the critical current the higher-order cumulants oscillate and the voltage noise is strongly non-Gaussian. For coloured input noise we determine the third cumulant of the voltage.

  19. Statistics of voltage fluctuations in resistively shunted Josephson junctions

    NASA Astrophysics Data System (ADS)

    Golubev, D. S.; Marthaler, M.; Utsumi, Y.; Schön, Gerd

    2010-05-01

    The intrinsic nonlinearity of Josephson junctions converts Gaussian current noise in the input into non-Gaussian voltage noise in the output. For a resistively shunted Josephson junction with white input noise we determine numerically exactly the properties of the few lowest cumulants of the voltage fluctuations, and we derive analytical expressions for these cumulants in several important limits. The statistics of the voltage fluctuations is found to be Gaussian at bias currents well above the Josephson critical current but Poissonian at currents below the critical value. In the transition region close to the critical current the higher-order cumulants oscillate and the voltage noise is strongly non-Gaussian. For colored input noise we determine the third cumulant of the voltage.

  20. Total ionizing dose effects in high voltage devices for flash memory

    NASA Astrophysics Data System (ADS)

    Liu, Zhangli; Hu, Zhiyuan; Zhang, Zhengxuan; Shao, Hua; Chen, Ming; Bi, Dawei; Ning, Bingxu; Wang, Ru; Zou, Shichang

    2010-12-01

    The effect of size and substrate bias conditions after irradiation on the total ionizing dose response of high voltage devices for flash memory has been investigated. Different sensitivity of transistors with different gate width was observed, which is well known as the radiation induced narrow channel effect. A charge sharing model was used to explain this effect. The negative substrate bias voltage after irradiation showed considerable impact on the parasitic transistor's response by suppressing leakage current.

  1. Estimating Bias Error Distributions

    NASA Technical Reports Server (NTRS)

    Liu, Tian-Shu; Finley, Tom D.

    2001-01-01

    This paper formulates the general methodology for estimating the bias error distribution of a device in a measuring domain from less accurate measurements when a minimal number of standard values (typically two values) are available. A new perspective is that the bias error distribution can be found as a solution of an intrinsic functional equation in a domain. Based on this theory, the scaling- and translation-based methods for determining the bias error distribution arc developed. These methods are virtually applicable to any device as long as the bias error distribution of the device can be sufficiently described by a power series (a polynomial) or a Fourier series in a domain. These methods have been validated through computational simulations and laboratory calibration experiments for a number of different devices.

  2. Introduction to Unconscious Bias

    NASA Astrophysics Data System (ADS)

    Schmelz, Joan T.

    2010-05-01

    We all have biases, and we are (for the most part) unaware of them. In general, men and women BOTH unconsciously devalue the contributions of women. This can have a detrimental effect on grant proposals, job applications, and performance reviews. Sociology is way ahead of astronomy in these studies. When evaluating identical application packages, male and female University psychology professors preferred 2:1 to hire "Brian” over "Karen” as an assistant professor. When evaluating a more experienced record (at the point of promotion to tenure), reservations were expressed four times more often when the name was female. This unconscious bias has a repeated negative effect on Karen's career. This talk will introduce the concept of unconscious bias and also give recommendations on how to address it using an example for a faculty search committee. The process of eliminating unconscious bias begins with awareness, then moves to policy and practice, and ends with accountability.

  3. Reverse bias protected solar array with integrated bypass battery

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A (Inventor)

    2012-01-01

    A method for protecting the photovoltaic cells in a photovoltaic (PV) array from reverse bias damage by utilizing a rechargeable battery for bypassing current from a shaded photovoltaic cell or group of cells, avoiding the need for a bypass diode. Further, the method mitigates the voltage degradation of a PV array caused by shaded cells.

  4. Increasingly minimal bias routing

    DOEpatents

    Bataineh, Abdulla; Court, Thomas; Roweth, Duncan

    2017-02-21

    A system and algorithm configured to generate diversity at the traffic source so that packets are uniformly distributed over all of the available paths, but to increase the likelihood of taking a minimal path with each hop the packet takes. This is achieved by configuring routing biases so as to prefer non-minimal paths at the injection point, but increasingly prefer minimal paths as the packet proceeds, referred to herein as Increasing Minimal Bias (IMB).

  5. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  6. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  7. High voltage power supply

    NASA Technical Reports Server (NTRS)

    Ruitberg, A. P.; Young, K. M. (Inventor)

    1985-01-01

    A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

  8. High Voltage Distribution

    NASA Astrophysics Data System (ADS)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  9. High-voltage distributors

    NASA Technical Reports Server (NTRS)

    Mcchesney, J. F., Jr.

    1974-01-01

    Two distributors reduce high-voltage breakdowns and corona discharges. Both distributors are constructed to prevent air traps and facilitate servicing without soldering. Occurrence of coronas is also minimized due to smooth surfaces of device.

  10. Control of Reactive Species Generated by Low-frequency Biased Nanosecond Pulse Discharge in Atmospheric Pressure Plasma Effluent

    NASA Astrophysics Data System (ADS)

    Takashima, Keisuke; Kaneko, Toshiro

    2016-09-01

    The control of hydroxyl radical and the other gas phase species generation in the ejected gas through air plasma (air plasma effluent) has been experimentally studied, which is a key to extend the range of plasma treatment. Nanosecond pulse discharge is known to produce high reduced electric field (E/N) discharge that leads to efficient generation of the reactive species than conventional low frequency discharge, while the charge-voltage cycle in the low frequency discharge is known to be well-controlled. In this study, the nanosecond pulse discharge biased with AC low frequency high voltage is used to take advantages of these discharges, which allows us to modulate the reactive species composition in the air plasma effluent. The utilization of the gas-liquid interface and the liquid phase chemical reactions between the modulated long-lived reactive species delivered from the air plasma effluent could realize efficient liquid phase chemical reactions leading to short-lived reactive species production far from the air plasma, which is crucial for some plasma agricultural applications.

  11. Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

    PubMed Central

    Anderson, William E.

    1989-01-01

    The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

  12. Technical Aspects of the Advanced Camera For Surveys Repair (ACS-R)

    NASA Technical Reports Server (NTRS)

    Rinehart, Stephen; Cheng, Edward S.; Sirianni, Marco

    2008-01-01

    The ACS Repair (ACS-R) team includes contributors from NASA's Goddard Space Flight Center, Ball Aerospace, and Teledyne Imaging Sensors; It determined that all of the capabilities of the ACS could be restored and created a concept for the ACS-R component of SN4. ACSR will restore the WFC of ACS by replacing the existing CCD Electronics Box (CEB) with the CEB-Replacement (CEB-R) and providing power from a new Low Voltage Power Supply Replacement (LVPS-8). The new LVPS-R will also attempt to restore the HRC function by providing power through the original power bus. In this presentation, we faeus on the concept and technical aspects of the ACS-R.

  13. Highly-Efficient and Modular Medium-Voltage Converters

    DTIC Science & Technology

    2015-09-28

    operation of the MMC-based adjustable-speed drive system is the large magnitude of the submodule (SM) capacitor volt- age ripple due to the inverse ...5), the peak-to-peak ripple of the SM capacitor voltages has an inverse depen- dency on the ac-side frequency and a direct dependency on the ac-side...line) 109 V Rated electrical frequency fr 120 Hz ^load 0.22 n Aoad 6.03 mH Number of poles pairs (P/2) 2 Table 3: MMC Parameters Quantity Value

  14. ACS/HRC Internal Assessment of Data Quality

    NASA Astrophysics Data System (ADS)

    Sirianni, Marco

    2006-07-01

    This program will assess the functionality of HRC after the ACS Suspend event that occurred on day 266 2006.A series of Bias, 0.1 sec pseudo dark, Dark and internal flat will be executed through amps A and B to assessdata quality.10-09-2006 : visits 01-03 should be withdrawn. 10-10-2006: visits 04-07 contains bias and dark frames to allow the creation of reference files using the standardamount of images. Two pairs of internal flats have been added for sanity checks.

  15. Time varying voltage combustion control and diagnostics sensor

    DOEpatents

    Chorpening, Benjamin T.; Thornton, Jimmy D.; Huckaby, E. David; Fincham, William

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  16. A special-case surface voltage gradient formula

    SciTech Connect

    Larsson, A.

    1996-10-01

    In the electrical design of a high-voltage substation, the designer needs a simple and reliable tool, preferably a closed-form formula, when calculating the surface voltage gradient of line segments within the substation since the surface voltage gradient is the governing parameter of the corona performance. This paper presents a derivation of a closed-form formula for calculation of the maximum surface voltage gradient of a special line configuration, namely a horizontal AC three-phase line configuration with bundle conductors consisting of three sub-conductors in a horizontal arrangement. The formula has been verified against exact calculations and was found to have an error less than 5% for all practical combinations of the conductor radius, the sub-conductor spacing, the phase distance, and the height above earth.

  17. Multilevel cascade voltage source inverter with separate DC sources

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-06-24

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations. 15 figs.

  18. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  19. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    2002-01-01

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  20. Multilevel cascade voltage source inverter with seperate DC sources

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    2001-04-03

    A multilevel cascade voltage source inverter having separate DC sources is described herein. This inverter is applicable to high voltage, high power applications such as flexible AC transmission systems (FACTS) including static VAR generation (SVG), power line conditioning, series compensation, phase shifting and voltage balancing and fuel cell and photovoltaic utility interface systems. The M-level inverter consists of at least one phase wherein each phase has a plurality of full bridge inverters equipped with an independent DC source. This inverter develops a near sinusoidal approximation voltage waveform with only one switching per cycle as the number of levels, M, is increased. The inverter may have either single-phase or multi-phase embodiments connected in either wye or delta configurations.

  1. Growth of oxide exchange bias layers

    DOEpatents

    Chaiken, A.; Michel, R.P.

    1998-07-21

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

  2. Review of biased solar arraay. Plasma interaction studies

    NASA Technical Reports Server (NTRS)

    Stevens, N. J.

    1981-01-01

    The Solar Electric Propulsion System (SEPS) is proposed for a variety of space missions. Power for operating SEPS is obtained from large solar array wings capable of generating tens of kilowatts of power. To minimize resistive losses in the solar array bus lines, the array is designed to operate at voltages up to 400 volts. This use of high voltage can increase interactions between the biased solar cell interconnects and plasma environments. With thrusters operating, the system ground is maintained at space plasma potential which exposes large areas of the arrays at the operating voltages. This can increase interactions with both the natural and enhanced charged particle environments. Available data on interactions between biased solar array surfaces and plasma environments are summarized. The apparent relationship between collection phenomena and solar cell size and effects of array size on interactions are discussed. The impact of these interactions on SEPS performance is presented.

  3. Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

    SciTech Connect

    Park, June-Young; Park, Byong-Guk; Baek, Seung-heon Chris; Park, Seung-Young; Jo, Younghun

    2015-11-02

    We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced at a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.

  4. The a.c. Josephson effect without superconductivity

    PubMed Central

    Gaury, Benoit; Weston, Joseph; Waintal, Xavier

    2015-01-01

    Superconductivity derives its most salient features from the coherence of the associated macroscopic wave function. The related physical phenomena have now moved from exotic subjects to fundamental building blocks for quantum circuits such as qubits or single photonic modes. Here we predict that the a.c. Josephson effect—which transforms a d.c. voltage Vb into an oscillating signal cos (2eVbt/ħ)—has a mesoscopic counterpart in normal conductors. We show that when a d.c. voltage Vb is applied to an electronic interferometer, there exists a universal transient regime where the current oscillates at frequency eVb/h. This effect is not limited by a superconducting gap and could, in principle, be used to produce tunable a.c. signals in the elusive 0.1–10-THz ‘terahertz gap’. PMID:25765929

  5. Robust nonlinear position-flux zero-bias control for uncertain AMB system

    NASA Astrophysics Data System (ADS)

    Mystkowski, Arkadiusz; Pawluszewicz, Ewa; Dragašius, Egidijus

    2015-08-01

    This paper presents a robust nonlinear control law that combines a parametric uncertainty of the single one-degree-of-freedom active magnetic bearing (AMB) system with disturbance. The robust nonlinear feedback tool such as control Lyapunov function (CLF) and robust stability techniques are developed. The control objective is to globally stabilise the mass position of an AMB with flux feedback. The flux-based control model for an AMB system is derived due to voltage switching strategy with voltage saturation. This strategy enables the flux control under a zero-bias or low-bias flux operation. In the zero-bias control, only one electromagnet in each axis of the AMB is active at any given time, depending on the rotor displacement. The proposed robust nonlinear CLF with a zero-bias for an uncertain AMB system can achieve a dynamic performance superior to that of a linear controller with the zero-bias or with the classical bias operations.

  6. Device for monitoring cell voltage

    DOEpatents

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  7. High voltage pulse generator

    DOEpatents

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  8. Inner Voltage Clamping

    PubMed Central

    Feldberg, Stephen W.; Delgado, Alicia B.

    1978-01-01

    Ketterer, et al. (1971) have suggested that a combination of electrostatic and chemical interactions may cause hydrophobic ions absorbed within a bilayer lipid membrane to reside in two potential wells, each close to a membrane surface. The resulting two planes of charges would define three regions of membrane dielectric: two identical outer regions each between a plane of absorbed charges and the plane of closest approach of ions in the aqueous phase; and the inner region between the two planes of adsorbed charges. The theory describing charge translocation across the inner region is based on a simple three-capacitor model. A significant theoretical conclusion is that the difference between the voltage across the inner region, Vi, and the voltage across the entire membrane, Vm, is directly proportional to the amount of charge that has flowed in a voltage clamp experiment. We demonstrate that we can construct an “inner voltage clamp” that can maintain, with positive feedback, a constant inner voltage, Vi. The manifestation of proper feedback is that the clamp current (after a voltage step) will exhibit pure (i.e., single time-constant) exponential decay, because the voltage dependent rate constants governing translocation will be independent of time. The “pureness” of the exponential is maximized when the standard deviation of the least-square fit of the appropriate exponential equation to the experimental data is minimized. The concomitant feedback is directly related to the capacitances of the inner and outer membrane regions, Ci and Co. Experimental results with tetraphenylborate ion adsorbed in bacterial phosphatidylethanolamine/n-decane bilayers indicate Ci ∼ 5 · 10-7F/cm2 and Co ≈ 5 · 10-5F/cm2. PMID:620078

  9. Changes in behavioral responses of Lygus lineolaris (Hemiptera: Miridae) from various applied signal voltages during EPG recordings

    Technology Transfer Automated Retrieval System (TEKTRAN)

    A 3rd-generation AC-DC electrical penetration graph (EPG) monitor was used to study feeding behaviors of pre-reproductive adult Lygus lineolaris (Hemiptera: Miridae) on pinhead (<3mm) cotton squares, applying different signal voltages at several input impedances. The AC-DC monitor allows a user to s...

  10. DC and AC Electric Field Measurements by Spin-Plane Double Probes Onboard MMS

    NASA Astrophysics Data System (ADS)

    Lindqvist, P. A.; Marklund, G. T.; Khotyaintsev, Y. V.; Ergun, R. E.; Goodrich, K.; Torbert, R. B.; Argall, M. R.; Nakamura, R.

    2015-12-01

    The four spacecraft of the NASA Magnetospheric Multiscale mission (MMS) were launched on 12 March 2015 into a 1.2 x 12 Re equatorial orbit to study energy conversion processes in Earth's magnetosphere. After a 5-month commissioning period the first scientific phase starts on 1 September as the orbit enters the dusk magnetopause region. The Spin-plane Double Probe electric field instrument (SDP), part of the electric and magnetic fields instrument suite FIELDS, measures the electric field in the range 0.3 - 500 mV/m with a continuous time resolution up to 8192 samples/s. The instrument features adjustable bias currents and guard voltages to optimize the measurement performance. SDP also measures the spacecraft potential, which can be controlled by the Active Spacecraft Potential Control (ASPOC) ion emitter, and under certain conditions can be used to determine plasma density. We present observations of DC and AC electric fields in different plasma regions covered by MMS since launch including the night side flow braking region, reconnection regions at the dusk and dayside magnetopause, and in the magnetosheath. We compare the electric field measurements by SDP to other, independent determinations of the electric field, in particular by the Electron Drift Instrument (EDI), in order to assess the accuracy of the electric field measurement under different plasma conditions. We also study the influence of the currents emitted by ASPOC and EDI on the SDP measurements.

  11. A new bias scheme for a low power consumption ReRAM crossbar array

    NASA Astrophysics Data System (ADS)

    Sun, Wookyung; Choi, Sujin; Shin, Hyungsoon

    2016-08-01

    This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app/12 and 7 × V app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme.

  12. Biasing and fast degaussing circuit for magnetic materials

    DOEpatents

    Dress, W.B. Jr.; McNeilly, D.R.

    1983-10-04

    A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a dc current and alternately apply a selectively damped ac current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

  13. Biasing and fast degaussing circuit for magnetic materials

    DOEpatents

    Dress, Jr., William B.; McNeilly, David R.

    1984-01-01

    A dual-function circuit is provided which may be used to both magnetically bias and alternately, quickly degauss a magnetic device. The circuit may be magnetically coupled or directly connected electrically to a magnetic device, such as a magnetostrictive transducer, to magnetically bias the device by applying a d.c. current and alternately apply a selectively damped a.c. current to the device to degauss the device. The circuit is of particular value in many systems which use magnetostrictive transducers for ultrasonic transmission in different propagation modes over very short time periods.

  14. Flashover Voltage of Some Electronegative Gases in Underwater Sound Transducers

    DTIC Science & Technology

    1979-03-28

    sulfate (Drierite). 5 - .7 BRIOW LWR Fig. 3 - Surface flashover test sample ,4 s t Fig. 4 - Gas test cell NRL REPORT 8285 PRESSURE VACUUM REGULATOR Pump... pulse was 10 ps and would simulate the leading edge of an ac voltage drive with a frequency of 25 kHz. The flashover voltage level (V ) recorded was...insulating gas on the surface of the PZT. This type breakdown is called surface flashover or "creepage," and in an otherwise well-designed transducer

  15. Distinguishing Selection Bias and Confounding Bias in Comparative Effectiveness Research.

    PubMed

    Haneuse, Sebastien

    2016-04-01

    Comparative effectiveness research (CER) aims to provide patients and physicians with evidence-based guidance on treatment decisions. As researchers conduct CER they face myriad challenges. Although inadequate control of confounding is the most-often cited source of potential bias, selection bias that arises when patients are differentially excluded from analyses is a distinct phenomenon with distinct consequences: confounding bias compromises internal validity, whereas selection bias compromises external validity. Despite this distinction, however, the label "treatment-selection bias" is being used in the CER literature to denote the phenomenon of confounding bias. Motivated by an ongoing study of treatment choice for depression on weight change over time, this paper formally distinguishes selection and confounding bias in CER. By formally distinguishing selection and confounding bias, this paper clarifies important scientific, design, and analysis issues relevant to ensuring validity. First is that the 2 types of biases may arise simultaneously in any given study; even if confounding bias is completely controlled, a study may nevertheless suffer from selection bias so that the results are not generalizable to the patient population of interest. Second is that the statistical methods used to mitigate the 2 biases are themselves distinct; methods developed to control one type of bias should not be expected to address the other. Finally, the control of selection and confounding bias will often require distinct covariate information. Consequently, as researchers plan future studies of comparative effectiveness, care must be taken to ensure that all data elements relevant to both confounding and selection bias are collected.

  16. Simulation of an ac electro-osmotic pump with step microelectrodes

    NASA Astrophysics Data System (ADS)

    Kim, Byoung Jae; Lee, Seung-Hyun; Rezazadeh, Soghra; Sung, Hyung Jin

    2011-05-01

    Pumps with step microelectrodes subjected to an ac voltage are known to have faster pumping rates than those with planar asymmetric microelectrodes. The driving force for pumping in these systems is ac electro-osmosis. This paper aims to understand the flow behaviors of pumps with step microelectrodes by using a realistic model applicable to high external voltages. This model takes the steric effect due to the finite sizes of ions into account and copes with the exponential sensitivity of the counterion concentration to voltage. The effects on the pumping flow rate of varying the pump parameters were investigated. The geometrical parameters were optimized, and the effects of varying the ac frequency and amplitude were examined. The electrical potential of the fluid and the electrical charge at the electrode surface were solved simultaneously, and the Stokes equation was used to describe the fluid flow.

  17. High voltage variable diameter insulator

    DOEpatents

    Vanacek, D.L.; Pike, C.D.

    1982-07-13

    A high voltage feedthrough assembly having a tubular insulator extending between the ground plane ring and the high voltage ring. The insulator is made of Pyrex and decreases in diameter from the ground plane ring to the high voltage ring, producing equipotential lines almost perpendicular to the wall of the insulator to optimize the voltage-holding capability of the feedthrough assembly.

  18. Non-oxidized porous silicon-based power AC switch peripheries

    NASA Astrophysics Data System (ADS)

    Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoué, Jérôme; Gautier, Gaël

    2012-10-01

    We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

  19. Assessment of issues for the MAST divertor biasing experiment

    NASA Astrophysics Data System (ADS)

    Helander, P.; Cohen, R. H.; Fielding, S.; Ryutov, D.

    2001-10-01

    A biasing experiment is being undertaken in the MAST scrape-off layer; the goal is to induce intense convection by a toroidally alternating biasing of divertor tiles. This would lead to a thickening of the SOL and a reduction of the heat load on the divertor plates. In addition, by studying the reaction of a plasma to a varying bias, one can collect new information regarding pre-existing SOL turbulence. We consider the following issues: 1. The bias amplitude required to produce significant SOL broadening; 2. Excitation of shear-flow turbulence in convective cells; 3. The role of magnetic shear; 4. Effects of electrostatic sheaths at the divertor plates; 5. Redistribution of heat fluxes during biasing. We show that a significant effect of the biasing on the SOL structure can be reached at relatively small bias voltages 30 V. We also show that the potential perturbations will be limited to a zone between the X-point and the biased tiles, and will be essentially decoupled from the main SOL plasma. Preliminary experimental results may be shown.

  20. Contamination effects on fixed-bias Langmuir probes

    SciTech Connect

    Steigies, C. T.; Barjatya, A.

    2012-11-15

    Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region.

  1. Voltage controlled current source

    DOEpatents

    Casne, Gregory M.

    1992-01-01

    A seven decade, voltage controlled current source is described for use in testing intermediate range nuclear instruments that covers the entire test current range of from 10 picoamperes to 100 microamperes. High accuracy is obtained throughout the entire seven decades of output current with circuitry that includes a coordinated switching scheme responsive to the input signal from a hybrid computer to control the input voltage to an antilog amplifier, and to selectively connect a resistance to the antilog amplifier output to provide a continuous output current source as a function of a preset range of input voltage. An operator controlled switch provides current adjustment for operation in either a real-time simulation test mode or a time response test mode.

  2. Electron launching voltage monitor

    DOEpatents

    Mendel, Clifford W.; Savage, Mark E.

    1992-01-01

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors.

  3. Electron launching voltage monitor

    DOEpatents

    Mendel, C.W.; Savage, M.E.

    1992-03-17

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

  4. High voltage coaxial switch

    DOEpatents

    Rink, John P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  5. High voltage coaxial switch

    DOEpatents

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  6. Power Electronic Transformer based Three-Phase PWM AC Drives

    NASA Astrophysics Data System (ADS)

    Basu, Kaushik

    A Transformer is used to provide galvanic isolation and to connect systems at different voltage levels. It is one of the largest and most expensive component in most of the high voltage and high power systems. Its size is inversely proportional to the operating frequency. The central idea behind a power electronic transformer (PET) also known as solid state transformer is to reduce the size of the transformer by increasing the frequency. Power electronic converters are used to change the frequency of operation. Steady reduction in the cost of the semiconductor switches and the advent of advanced magnetic materials with very low loss density and high saturation flux density implies economic viability and feasibility of a design with high power density. Application of PET is in generation of power from renewable energy sources, especially wind and solar. Other important application include grid tied inverters, UPS e.t.c. In this thesis non-resonant, single stage, bi-directional PET is considered. The main objective of this converter is to generate adjustable speed and magnitude pulse width modulated (PWM) ac waveforms from an ac or dc grid with a high frequency ac link. The windings of a high frequency transformer contains leakage inductance. Any switching transition of the power electronic converter connecting the inductive load and the transformer requires commutation of leakage energy. Commutation by passive means results in power loss, decrease in the frequency of operation, distortion in the output voltage waveform, reduction in reliability and power density. In this work a source based partially loss-less commutation of leakage energy has been proposed. This technique also results in partial soft-switching. A series of converters with novel PWM strategies have been proposed to minimize the frequency of leakage inductance commutation. These PETs achieve most of the important features of modern PWM ac drives including 1) Input power factor correction, 2) Common

  7. Electric Power High-Voltage Transmission Lines: Design Options, Cost, and Electric and Magnetic Field Levels

    SciTech Connect

    Stoffel, J. B.; Pentecost, E. D.; Roman, R. D.; Traczyk, P. A.

    1994-11-01

    The aim of this report is to provide background information about (1) the electric and magnetic fields (EMFs) of high-voltage transmission lines at typical voltages and line configurations and (2) typical transmission line costs to assist preparers and reviewers of the section on alternatives in environmental documents. This report will give the reviewing individual a better appreciation of the factors affecting EMF strengths near high-voltage transmission lines and the approaches that might be used to reduce EMF impacts on humans and other biological species in the vicinity of high-voltage overhead or underground alternating-current (ac) or direct-current (dc) transmission lines.

  8. Understanding bias in provenance studies

    NASA Astrophysics Data System (ADS)

    Garzanti, Eduardo; Andò, Sergio; Malusà, Marco; Vezzoli, Giovanni

    2010-05-01

    different subenvironments within a same system, and sediments of approximately constant provenance and progressively older age. Detangling the various interacting factors controlling mineralogical and chemical compositional variability is a fundamental pre-requisite to improve decisively not only on our ability to unravel provenance, but also to understand much about climatic, hydraulic, and diagenetic processes. Garzanti E., Andò S., 2007, Heavy-mineral concentration in modern sands: implications for provenance interpretation. In: Mange, M.A., Wright, D.T., (Eds.), Heavy Minerals in Use, Elsevier, Amsterdam, Developments in Sedimentology Series 58, 517-545. Garzanti, E., Andò, S., Vezzoli, G., 2008. Settling-equivalence of detrital minerals and grain-size dependence of sediment composition. Earth Planet. Sci. Lett. 273, 138-151. Garzanti E., Ando' S., Vezzoli G., 2009, Grain-size dependence of sediment composition and environmental bias in provenance studies, Earth Planet. Sci. Lett., 277, 422-432. Komar, P.D., 2007. The entrainment, transport and sorting of heavy minerals by waves and currents In: Mange, M.A., Wright, D.T., (Eds.), Heavy Minerals in Use, Elsevier, Amsterdam, Developments in Sedimentology Series 58, 3-48. Morton A.C., Hallsworth, C., 2007. Stability of detrital heavy minerals during burial diagenesis. In: Mange, M.A., Wright, D.T., (Eds.), Heavy Minerals in Use, Elsevier, Amsterdam, Developments in Sedimentology Series 58, 215-245. Rubey, W.W., 1933. The size-distribution of heavy minerals within a water-laid sandstone. J. Sedim. Petrol. 3, 3-29. Velbel, M.A., 2007. Surface textures and dissolution processes of heavy minerals in the sedimentary cycle: examples from pyroxenes and amphiboles. In: Mange, M.A., Wright, D.T., (Eds.), Heavy Minerals in Use, Elsevier, Amsterdam, Developments in Sedimentology Series 58, 113-150.

  9. Voltage Regulators for Photovoltaic Systems

    NASA Technical Reports Server (NTRS)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  10. Geomagnetism and induced voltage

    NASA Astrophysics Data System (ADS)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-07-01

    Introductory physics laboratories have seen an influx of conceptual integrated science over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it is initiated by the change in the magnetic flux due to the Earth's magnetic field and movement. This simple and enjoyable experiment will demonstrate how basic concepts in physics and geology can help us think about possible health effects due to the induced voltage.

  11. New zero voltage switching DC converter with flying capacitors

    NASA Astrophysics Data System (ADS)

    Lin, Bor-Ren; Shiau, Tung-Yuan

    2016-04-01

    A new soft switching converter is presented for medium power applications. Two full-bridge converters are connected in series at high voltage side in order to limit the voltage stress of power switches at Vin/2. Therefore, power metal-oxide-semiconductor field-effect transistors (MOSFETs) with 600 V voltage rating can be adopted for 1200 V input voltage applications. In order to balance two input split capacitor voltages in every switching cycle, two flying capacitors are connected on the AC side of two full-bridge converters. Phase-shift pulse-width modulation (PS-PWM) is adopted to regulate the output voltage. Based on the resonant behaviour by the output capacitance of MOSFETs and the resonant inductance, active MOSFETs can be turned on under zero voltage switching (ZVS) during the transition interval. Thus, the switching losses of power MOSFETs are reduced. Two full-bridge converters are used in the proposed circuit to share load current and reduce the current stress of passive and active components. The circuit analysis and design example of the prototype circuit are provided in detail and the performance of the proposed converter is verified by the experiments.

  12. Admittance Spectroscopy in CZTSSe: Metastability Behavior and Voltage Dependent Defect Study

    SciTech Connect

    Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

    2016-11-21

    Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

  13. Marine High Voltage Power Conditioning and Transmission System with Integrated Storage DE-EE0003640 Final Report

    SciTech Connect

    Frank Hoffmann, PhD; Aspinall, Rik

    2012-12-10

    Design, Development, and test of the three-port power converter for marine hydrokinetic power transmission. Converter provides ports for AC/DC conversion of hydrokinetic power, battery storage, and a low voltage to high voltage DC port for HVDC transmission to shore. The report covers the design, development, implementation, and testing of a prototype built by PPS.

  14. Module Nine: Relationships of Current, Counter EMF, and Voltage in LR Circuits; Basic Electricity and Electronics Individualized Learning System.

    ERIC Educational Resources Information Center

    Bureau of Naval Personnel, Washington, DC.

    The student will study the ways that inductance affects voltage and current in Direct Current (DC) and Alternating Current (AC) circuits and why and how inductors cause these actions. The module is divided into six lessons: rise and decay of current and voltage, LR (inductive-resistive) time constant, using the universal TC (time constant) chart,…

  15. Sex Bias in Children.

    ERIC Educational Resources Information Center

    Zalk, Sue Rosenberg; And Others

    This study investigated children's sex biased attitudes as a function of the sex, age, and race of the child as well as a geographical-SES factor. Two attitudes were measured on a 55-item questionnaire: Sex Pride (attributing positive characteristics to a child of the same sex) and Sex Prejudice (attributing negative characteristics to a child of…

  16. A significant bias

    NASA Astrophysics Data System (ADS)

    Eades, Alwyn

    2013-09-01

    While I do not wish to belittle the unfortunate conclusions that may be drawn from your news article "Gender bias judges research by women more critically" (May p12), I do want to comment on the way the article is presented.

  17. Own Variety Bias

    PubMed Central

    García, Andrea Ariza

    2015-01-01

    In a language identification task, native Belgian French and native Swiss French speakers identified French from France as their own variety. However, Canadian French was not subject to this bias. Canadian and French listeners didn’t claim a different variety as their own. PMID:27648211

  18. Modeling of the Plasma Electrode Bias in the Negative Ion Sources with 1D PIC Method

    SciTech Connect

    Matsushita, D.; Kuppel, S.; Hatayama, A.; Fukano, A.; Bacal, M.

    2009-03-12

    The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H{sup -} ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H{sup -} ion density is discussed.

  19. Characterization and snubbing of a bidirectional MCT in a resonant ac link converter

    NASA Technical Reports Server (NTRS)

    Lee, Tony; Elbuluk, Malik E.; Zinger, Donald S.

    1993-01-01

    The MOS-Controlled Thyristor (MCT) is emerging as a powerful switch that combines the better characteristics of existing power devices. A study of switching stresses on an MCT switch under zero voltage resonant switching is presented. The MCT is used as a bidirectional switch in an ac/ac pulse density modulated inverter for induction motor drive. Current and voltage spikes are observed and analyzed with variations in the timing of the switching. Different snubber circuit configurations are under investigation to minimize the effect of these transients. The results will be extended to study and test the MCT switching in a medium power (5 hp) induction motor drive.

  20. Geomagnetism and Induced Voltage

    ERIC Educational Resources Information Center

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  1. Measuring Breakdown Voltage.

    ERIC Educational Resources Information Center

    Auer, Herbert J.

    1978-01-01

    The article discusses an aspect of conductivity, one of the electrical properties subdivisions, and describes a tester that can be shop-built. Breakdown voltage of an insulation material is specifically examined. Test procedures, parts lists, diagrams, and test data form are included. (MF)

  2. High Voltage Insulation Technology

    NASA Astrophysics Data System (ADS)

    Scherb, V.; Rogalla, K.; Gollor, M.

    2008-09-01

    In preparation of new Electronic Power Conditioners (EPC's) for Travelling Wave Tub Amplifiers (TWTA's) on telecom satellites a study for the development of new high voltage insulation technology is performed. The initiative is mandatory to allow compact designs and to enable higher operating voltages. In a first task a market analysis was performed, comparing different materials with respect to their properties and processes. A hierarchy of selection criteria was established and finally five material candidates (4 Epoxy resins and 1 Polyurethane resin) were selected to be further investigated in the test program. Samples for the test program were designed to represent core elements of an EPC, the high voltage transformer and Printed Circuit Boards of the high voltage section. All five materials were assessed in the practical work flow of the potting process and electrical, mechanical, thermal and lifetime testing was performed. Although the lifetime tests results were overlayed by a larges scatter, finally two candidates have been identified for use in a subsequent qualification program. This activity forms part of element 5 of the ESA ARTES Programme.

  3. Voltage-Controlled Oscillator

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Integrated Component Systems, Inc. incorporated information from a NASA Tech Briefs article into a voltage-controlled oscillator it designed for a customer. The company then applied the technology to its series of phase-locked loop synthesizers, which offer superior phase noise performance.

  4. Fuzzy efficiency optimization of AC induction motors

    NASA Technical Reports Server (NTRS)

    Jani, Yashvant; Sousa, Gilberto; Turner, Wayne; Spiegel, Ron; Chappell, Jeff

    1993-01-01

    This paper describes the early states of work to implement a fuzzy logic controller to optimize the efficiency of AC induction motor/adjustable speed drive (ASD) systems running at less than optimal speed and torque conditions. In this paper, the process by which the membership functions of the controller were tuned is discussed and a controller which operates on frequency as well as voltage is proposed. The membership functions for this dual-variable controller are sketched. Additional topics include an approach for fuzzy logic to motor current control which can be used with vector-controlled drives. Incorporation of a fuzzy controller as an application-specific integrated circuit (ASIC) microchip is planned.

  5. Biased allosteric modulation at the CaS receptor engendered by structurally diverse calcimimetics

    PubMed Central

    Cook, A E; Mistry, S N; Gregory, K J; Furness, S G B; Sexton, P M; Scammells, P J; Conigrave, A D; Christopoulos, A; Leach, K

    2015-01-01

    BACKGROUND AND PURPOSE Clinical use of cinacalcet in hyperparathyroidism is complicated by its tendency to induce hypocalcaemia, arising partly from activation of calcium-sensing receptors (CaS receptors) in the thyroid and stimulation of calcitonin release. CaS receptor allosteric modulators that selectively bias signalling towards pathways that mediate desired effects [e.g. parathyroid hormone (PTH) suppression] rather than those mediating undesirable effects (e.g. elevated serum calcitonin), may offer better therapies. EXPERIMENTAL APPROACH We characterized the ligand-biased profile of novel calcimimetics in HEK293 cells stably expressing human CaS receptors, by monitoring intracellular calcium (Ca2+i) mobilization, inositol phosphate (IP)1 accumulation, ERK1/2 phosphorylation (pERK1/2) and receptor expression. KEY RESULTS Phenylalkylamine calcimimetics were biased towards allosteric modulation of Ca2+i mobilization and IP1 accumulation. S,R-calcimimetic B was biased only towards IP1 accumulation. R,R-calcimimetic B and AC-265347 were biased towards IP1 accumulation and pERK1/2. Nor-calcimimetic B was unbiased. In contrast to phenylalkylamines and calcimimetic B analogues, AC-265347 did not promote trafficking of a loss-of-expression, naturally occurring, CaS receptor mutation (G670E). CONCLUSIONS AND IMPLICATIONS The ability of R,R-calcimimetic B and AC-265347 to bias signalling towards pERK1/2 and IP1 accumulation may explain their suppression of PTH levels in vivo at concentrations that have no effect on serum calcitonin levels. The demonstration that AC-265347 promotes CaS receptor receptor signalling, but not trafficking reveals a novel profile of ligand-biased modulation at CaS receptors The identification of allosteric modulators that bias CaS receptor signalling towards distinct intracellular pathways provides an opportunity to develop desirable biased signalling profiles in vivo for mediating selective physiological responses. PMID:25220431

  6. AC Optimal Power Flow

    SciTech Connect

    2016-10-04

    In this work, we have implemented and developed the simulation software to implement the mathematical model of an AC Optimal Power Flow (OPF) problem. The objective function is to minimize the total cost of generation subject to constraints of node power balance (both real and reactive) and line power flow limits (MW, MVAr, and MVA). We have currently implemented the polar coordinate version of the problem. In the present work, we have used the optimization solver, Knitro (proprietary and not included in this software) to solve the problem and we have kept option for both the native numerical derivative evaluation (working satisfactorily now) as well as for analytical formulas corresponding to the derivatives being provided to Knitro (currently, in the debugging stage). Since the AC OPF is a highly non-convex optimization problem, we have also kept the option for a multistart solution. All of these can be decided by the user during run-time in an interactive manner. The software has been developed in C++ programming language, running with GCC compiler on a Linux machine. We have tested for satisfactory results against Matpower for the IEEE 14 bus system.

  7. HVDC-AC system interaction from AC harmonics. Volume 1. Harmonic impedance calculations. Final report

    SciTech Connect

    Breuer, G D; Chow, J H; Lindh, C B; Miller, N W; Numrich, F H; Price, W W; Turner, A E; Whitney, R R

    1982-09-01

    Improved methods are needed to characterize ac system harmonic behavior for ac filter design for HVDC systems. The purpose of this General Electric Company RP1138 research is to evaluate the present filter design practice and to investigate methods for calculating system harmonic impedances. An overview of ac filter design for HVDC systems and a survey of literature related to filter design have been performed. Two methods for calculating system harmonic impedances have been investigated. In the measurement method, an instrumentation system for measuring system voltage and current has been assembled. Different schemes of using the measurements to calculate system harmonic impedances have been studied. In the analytical method, a procedure to include various operating conditions has been proposed. Computer programs for both methods have been prepared, and the results of the measurement and analytical methods analyzed. A conclusion of the project is that the measurement and analytical methods both provided reasonable results. There are correlations between the measured and analytical results for most harmonics, although there are discrepancies between the assumptions used in the two methods. A sensitivity approach has been proposed to further correlate the results. From the results of the analysis, it is recommended that both methods should be tested further. For the measurement method, more testing should be done to cover different system operating conditions. In the analytical method, more detailed models for representing system components should be studied. In addition, alternative statistical and sensitivity approaches should be attempted.

  8. Theoretical and experimental study of meniscus behavior under AC electric field for Electrohydrodynamic (EHD) jetting

    NASA Astrophysics Data System (ADS)

    Tran, Si Bui Quang; Byun, Doyoung

    2009-11-01

    The electrohydrodynamic (EHD) spraying technique has been utilized in applications such as inkjet printing and mass spectrometry technologies. In this paper, the role of electrical potential signals in jetting and on the oscillation of the meniscus is evaluated. The jetting and meniscus oscillation behavior are experimentally investigated under ac voltage, ac voltage superimposed on dc voltage, and pulsed dc voltage. Furthermore, the analytical simulation about the oscillation of an anchored edge hemispherical meniscus located on a conductive flat plate under a uniform ac electric field is presented. The mutual interaction between the electric field and the hydrodynamics is iteratively solved. As a result, the simulation can calculate the meniscus shapes, contours of voltage outside the meniscus and the velocity profile of liquid inside the meniscus during the period of the oscillation according to the applied frequency. Based on the present theory, one can predict the oscillation mode with a certain applied frequency. The present theory can also be applied to investigate the oscillation of a free conductive drop in a uniform ac electric field.

  9. Resonant tunneling in small current-biased Josephson Junctions

    SciTech Connect

    Schmidt, John Mark

    1994-05-01

    Effects of resonant tunneling between bound quantum states of a current-biased Josephson tunnel junction is studied both theoretically and experimentally. Several effects are predicted to arise from resonant tunneling, including a series of voltage peaks along the supercurrent branch of the current-voltage characteristic, and enhanced rate of escape from zero voltage state to voltage state at particular values of bias current. A model is developed to estimate magnitude and duration of voltage peaks, and to estimate enhancement of the escape rate, which appears as peaks in the rate as a function of bias current. An experimental investigation was carried out in an attempt to observe these predicted peaks in the escape rate distribution in a current-biased DC SQUID, which is shown to be dynamically equivalent to a Josephson junction with adjustable critical current. Electrical contact to each SQUID (fabricated from aluminium) was made through high resistance thin film leads located on the substrate. These resistors provided a high impedance at the plasma frequency which is for the isolation of the SQUID from its electromagnetic environment. Measurements were carried out on a dilution refrigerator at temperatures as low as 19 mK. No evidence was found for resonant tunneling; this is attributed to effective temperatures of hundreds of millikelvin. The behavior is well explained by a heating model where the high effective temperatures are generated by ohmic heating of the electron gas of the isolation resistors, which decouples from the phonon system (hot electron effect). The prospects for further theoretical and experimental research are discussed.

  10. Identification of /sup 233/Ac

    SciTech Connect

    Chu, Y.Y.; Zhou, M.L.

    1983-09-01

    We report in this paper identification of the new isotope /sup 233/Ac. Uranium targets were irradiated with 28 GeV protons; after rapid retrieval of the target and separation of actinium from thorium, /sup 233/Ac was allowed to decay into the known /sup 233/Th daughter. Exhaustive chemical purification was employed to permit the identification of /sup 233/Th via its characteristic ..gamma.. radiations. The half-life derived for /sup 233/Ac from several experiments is 2.3 +- 0.3 min. The production cross section for /sup 233/Ac is 100 ..mu..b.

  11. Cascading failures in ac electricity grids.

    PubMed

    Rohden, Martin; Jung, Daniel; Tamrakar, Samyak; Kettemann, Stefan

    2016-09-01

    Sudden failure of a single transmission element in a power grid can induce a domino effect of cascading failures, which can lead to the isolation of a large number of consumers or even to the failure of the entire grid. Here we present results of the simulation of cascading failures in power grids, using an alternating current (AC) model. We first apply this model to a regular square grid topology. For a random placement of consumers and generators on the grid, the probability to find more than a certain number of unsupplied consumers decays as a power law and obeys a scaling law with respect to system size. Varying the transmitted power threshold above which a transmission line fails does not seem to change the power-law exponent q≈1.6. Furthermore, we study the influence of the placement of generators and consumers on the number of affected consumers and demonstrate that large clusters of generators and consumers are especially vulnerable to cascading failures. As a real-world topology, we consider the German high-voltage transmission grid. Applying the dynamic AC model and considering a random placement of consumers, we find that the probability to disconnect more than a certain number of consumers depends strongly on the threshold. For large thresholds the decay is clearly exponential, while for small ones the decay is slow, indicating a power-law decay.

  12. Cascading failures in ac electricity grids

    NASA Astrophysics Data System (ADS)

    Rohden, Martin; Jung, Daniel; Tamrakar, Samyak; Kettemann, Stefan

    2016-09-01

    Sudden failure of a single transmission element in a power grid can induce a domino effect of cascading failures, which can lead to the isolation of a large number of consumers or even to the failure of the entire grid. Here we present results of the simulation of cascading failures in power grids, using an alternating current (AC) model. We first apply this model to a regular square grid topology. For a random placement of consumers and generators on the grid, the probability to find more than a certain number of unsupplied consumers decays as a power law and obeys a scaling law with respect to system size. Varying the transmitted power threshold above which a transmission line fails does not seem to change the power-law exponent q ≈1.6 . Furthermore, we study the influence of the placement of generators and consumers on the number of affected consumers and demonstrate that large clusters of generators and consumers are especially vulnerable to cascading failures. As a real-world topology, we consider the German high-voltage transmission grid. Applying the dynamic AC model and considering a random placement of consumers, we find that the probability to disconnect more than a certain number of consumers depends strongly on the threshold. For large thresholds the decay is clearly exponential, while for small ones the decay is slow, indicating a power-law decay.

  13. Amorphous force transducers in ac applications

    NASA Astrophysics Data System (ADS)

    Meydan, T.; Overshott, K. J.

    1982-11-01

    The high stress sensitivity and high yield stress properties of amorphous ribbon materials make them suitable for magnetic sensors and tranducer applications. Recently the authors have shown that ac systems eliminate the offset voltage and drift problems of the previously published dc systems. Further investigations proved that these transducers could be operated with a linear characteristic up to 1000 g in multiwrap toroidal configurations. The cause of the transducing behavior of the materials was proved to be variation of permeability with stress. It was previously suggested that the optimum operating frequency of the ac transducers is dependent on the physical configuration of the core. Further investigations have shown that the optimum operating frequency is linearly dependent on the amplitude of the input signal to the transducer. Double-core systems have been previously described in the literature where one core acts as a dummy core and the force is applied to the active core. The disadvantage of the double-core system is that aging of the active core changes the performance of the transducer by as much as 10%. A new system will be presented which uses an accurate analog memory to reduce the ageing effect to a fraction of one percent.

  14. Droplet condensation on superhydrophobic surfaces with enhanced dewetting under a tangential AC electric field

    NASA Astrophysics Data System (ADS)

    Yan, Xinzhu; Li, Jian; Li, Licheng; Huang, Zhengyong; Wang, Feipeng; Wei, Yuan

    2016-10-01

    In this Letter, the dewetting behavior of superhydrophobic condensing surfaces under a tangential AC electric field is reported. The surface coverage of condensed droplets only exhibits a negligible increase with time. The jumping frequency of droplets is enhanced. The AC electric field motivates the dynamic transition of droplets from stretch to recoil, resulting in the counterforce propelling droplet jumping. The considerable horizontal component of jumping velocity facilitates droplet departure from superhydrophobic surfaces. Both the amplitude and frequency of AC voltage are important factors for droplet departure and dewetting effect. Thereby, the tangential electric field provides a unique and easily implementable approach to enhance droplet removal from superhydrophobic condensing surfaces.

  15. Effect of carbon substitution on low magnetic field AC losses in MgB 2 single crystals

    NASA Astrophysics Data System (ADS)

    Ciszek, M.; Rogacki, K.; Karpiński, J.

    2011-11-01

    The DC magnetization and AC magnetic susceptibilities were measured for MgB2 single crystals, unsubstituted and carbon substituted with the composition of Mg(B0.94C0.06)2. AC magnetic losses were derived from the AC susceptibility data as a function of the AC amplitude and the DC bias magnetic field. From the DC magnetization loops critical current densities were derived as a function of temperature and DC field. Results show that the substitution with carbon decreases critical current densities at low external magnetic fields, in contrast to the well known effect of an increase of the critical current densities at higher magnetic fields.

  16. Temperature trend biases

    NASA Astrophysics Data System (ADS)

    Venema, Victor; Lindau, Ralf

    2016-04-01

    In an accompanying talk we show that well-homogenized national dataset warm more than temperatures from global collections averaged over the region of common coverage. In this poster we want to present auxiliary work about possible biases in the raw observations and on how well relative statistical homogenization can remove trend biases. There are several possible causes of cooling biases, which have not been studied much. Siting could be an important factor. Urban stations tend to move away from the centre to better locations. Many stations started inside of urban areas and are nowadays more outside. Even for villages the temperature difference between the centre and edge can be 0.5°C. When a city station moves to an airport, which often happened around WWII, this takes the station (largely) out of the urban heat island. During the 20th century the Stevenson screen was established as the dominant thermometer screen. This screen protected the thermometer much better against radiation than earlier designs. Deficits of earlier measurement methods have artificially warmed the temperatures in the 19th century. Newer studies suggest we may have underestimated the size of this bias. Currently we are in a transition to Automatic Weather Stations. The net global effect of this transition is not clear at this moment. Irrigation on average decreases the 2m-temperature by about 1 degree centigrade. At the same time, irrigation has increased significantly during the last century. People preferentially live in irrigated areas and weather stations serve agriculture. Thus it is possible that there is a higher likelihood that weather stations are erected in irrigated areas than elsewhere. In this case irrigation could lead to a spurious cooling trend. In the Parallel Observations Science Team of the International Surface Temperature Initiative (ISTI-POST) we are studying influence of the introduction of Stevenson screens and Automatic Weather Stations using parallel measurements

  17. A Perpendicular Biased 2nd Harmonic Cavity for the Fermilab Booster

    SciTech Connect

    Tan, C. Y.; Dey, J.; Madrak, R. L.; Pellico, W.; Romanov, G.; Sun, D.; Terechkine, I.

    2015-07-13

    A perpendicular biased 2nd harmonic cavity is currently being designed for the Fermilab Booster. Its purpose cavity is to flatten the bucket at injection and thus change the longitudinal beam distribution so that space charge effects are decreased. It can also with transition crossing. The reason for the choice of perpendicular biasing over parallel biasing is that the Q of the cavity is much higher and thus allows the accelerating voltage to be a factor of two higher than a similar parallel biased cavity. This cavity will also provide a higher accelerating voltage per meter than the present folded transmission line cavity. However, this type of cavity presents technical challenges that need to be addressed. The two major issues are cooling of the garnet material from the effects of the RF and the cavity itself from eddy current heating because of the 15 Hz bias field ramp. This paper will address the technical challenge of preventing the garnet from overheating.

  18. Theoretical and experimental study on the optimal performance of an optical voltage controlled oscillator

    NASA Astrophysics Data System (ADS)

    Ding, Ding; Zhang, Yangan; Li, Yupeng; Wang, Limeng

    2015-10-01

    As a key component of the subcarrier-based optical phase-locked loop, an optical voltage controlled oscillator (OVCO) suffers a penalty due to various factors, such as the nonoptimal peak drive voltage, the bias voltage deviation, and the inevitable imperfections of the modulator and the driver. We have performed a systematic study to investigate the influence of these factors on the performance of the OVCO. Our theoretical analysis and experimental demonstration show that by setting the peak drive voltage to around 1.172Vπ, employing a proper automatic bias control technology for the Mach-Zehnder modulator, and applying a driver with adequate output saturation voltage, the optimal performance of the OVCO with high power efficiency and stable output can be achieved. Our results may provide useful guides for the design of an OVCO or the production of a commercially integrated OVCO component.

  19. Cooling Floor AC Systems

    NASA Astrophysics Data System (ADS)

    Jun, Lu; Hao, Ding; Hong, Zhang; Ce, Gao Dian

    The present HVAC equipments for the residential buildings in the Hot-summer-and-Cold-winter climate region are still at a high energy consuming level. So that the high efficiency HVAC system is an urgently need for achieving the preset government energy saving goal. With its advantage of highly sanitary, highly comfortable and uniform of temperature field, the hot-water resource floor radiation heating system has been widely accepted. This paper has put forward a new way in air-conditioning, which combines the fresh-air supply unit and such floor radiation system for the dehumidification and cooling in summer or heating in winter. By analyze its advantages and limitations, we found that this so called Cooling/ Heating Floor AC System can improve the IAQ of residential building while keep high efficiency quality. We also recommend a methodology for the HVAC system designing, which will ensure the reduction of energy cost of users.

  20. Investigation of the uncertainties of the NBS (National Bureau of Standards) thermal voltage and current converters

    NASA Astrophysics Data System (ADS)

    Hermach, F. L.

    1985-04-01

    The uncertainties of the NBS reference and working standards for ac-dc current and voltage transfer measurements have been redetermined, to 50 and 100 kHz, respectively, by means of a set of multijunction thermal converters (MJTCs), an improved emf comparator, and extensive series of intercomparisons. As a result the accuracy of the NBS standards and the output of its calibration service for ac-dc current and voltage transfer are considered to be on a much firmer and better documented basis. Improvement by factors of two to five in the calibration accuracy for high-quality, single-range thermoelements and thermal voltage converters is possible for certain ranges of current, voltage, and frequency. For very special tests, such as international comparisons, accuracies approaching 1 ppm are within reach.

  1. High Voltage Seismic Generator

    NASA Astrophysics Data System (ADS)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  2. Increased voltage photovoltaic cell

    NASA Technical Reports Server (NTRS)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  3. Insulators for high voltages

    SciTech Connect

    Looms, J.S.T.

    1987-01-01

    This book describes electrical insulators for high voltage applications. Topics considered include the insulating materials, the manufacture of wet process porcelain, the manufacture of tempered glass, the glass-fibre core, the polymeric housing, the common problem - terminating an insulator, mechanical constraints, the physics of pollution flashover, the physics of contamination, testing of insulators, conclusions from testing, remedies for flashover, insulators for special cases, interference and noise, and the insulator of the future.

  4. High voltage generator

    DOEpatents

    Schwemin, A. J.

    1959-03-17

    A generator for producing relatively large currents at high voltages is described. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The above-noted circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  5. High voltage pulse conditioning

    DOEpatents

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  6. HIGH VOLTAGE GENERATOR

    DOEpatents

    Schwemin, A.J.

    1959-03-17

    A generator is presented for producing relatively large currents at high voltages. In general, the invention comprises a plurality of capacitors connected in series by a plurality of switches alternately disposed with the capacitors. The circuit is mounted for movement with respect to contact members and switch closure means so that a load device and power supply are connected across successive numbers of capacitors, while the other capacitors are successively charged with the same power supply.

  7. Automated ac galvanomagnetic measurement system

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Espy, P. N.

    1985-01-01

    An automated, ac galvanomagnetic measurement system is described. Hall or van der Pauw measurements in the temperature range 10-300 K can be made at a preselected magnetic field without operator attendance. Procedures to validate sample installation and correct operation of other system functions, such as magnetic field and thermometry, are included. Advantages of ac measurements are discussed.

  8. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  9. APPARATUS FOR REGULATING HIGH VOLTAGE

    DOEpatents

    Morrison, K.G.

    1951-03-20

    This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

  10. Electrical transport properties and current density - voltage characteristic of PVA-Ag nanocomposite film

    NASA Astrophysics Data System (ADS)

    Das, A. K.; Dutta, B.; Sinha, S.; Mukherjee, A.; Basu, S.; Meikap, A. K.

    2016-05-01

    Silver (Ag) nanoparticle and Polyvinyl alcohol (PVA) - Silver (Ag) composite have been prepared and its dielectric constant, ac conductivity, and current density-voltage characteristics have been studied, at and above room temperature. Here correlated barrier hopping found to be the dominant charge transport mechanism with maximum barrier height of 0.11 eV. The sample, under ±5 V applied voltage, show back to back Schottky diode behaviour.

  11. High voltage variable diameter insulator

    DOEpatents

    Vanecek, David L.; Pike, Chester D.

    1984-01-01

    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  12. Charge-pump voltage converter

    DOEpatents

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  13. The System Impact of Air-Conditioner Under-voltage Protection Schemes

    SciTech Connect

    Lu, Ning; Yang, Bo; Huang, Zhenyu; Bravo, Richard

    2009-03-31

    This paper presents simulation results of evaluating an under-voltage protection scheme designed to take stalled air-conditioner (a/c) units offline such that the slow voltage recovery phenomena can be solved on areas heavily loaded with a/c motors during summer peak periods. A three feeder test-bed has been first used to quantify the effectiveness of the protection scheme and the sensitivity of the under-voltage relay settings. Then two real system events of the Western US power grid have been studied to evaluate the area impact of the protection scheme proposed by Southern California Edison. The study demonstrates that by taking all or most of the stalled a/c unit offline, the feeder voltage will recover in a few seconds, much quicker than the tens of seconds that the standard thermal relays imbedded in the motors need to trip the units. The drawback of the control scheme is that after the voltage recover, it settled at a higher voltage than before the faults because a large chuck of load has been shed.

  14. Improving thrust by pulse-induced breakdown enhancement in AC surface dielectric barrier discharge actuators for airflow control

    NASA Astrophysics Data System (ADS)

    Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

    2016-07-01

    The characteristics of a plate-to-plate AC surface dielectric barrier discharge (SDBD) actuator using the pulse-induced breakdown enhancing method are experimentally investigated. The encapsulated electrode is supplied with a sine high AC voltage, while the exposed electrode is feed by a synchronized pulse voltage. Based on the thrust force and power consumption measurements, a parametric study was performed using a positive pulse applied at the trough phase of the AC cycles in which the thrust force was observed to increase by about 100% to 300% and the efficiency up to about 100% compared with the AC-only supply conditions for different AC voltages within the tested range. The pulse-induced breakdown effect was analyzed from the electrical and light emission waveforms to reveal the underlying mechanism. The surface potential due to the charge deposition effect was also measured using a specially designed corona-like discharge potential probe. It is shown that the pulse-induced breakdown was able to cause a temporarily intensified local electric field to enhance the glow-like discharge and meanwhile increase the time-average surface potential in the region further downstream. The improvement in the force by the enhancement in the pulse-induced breakdown was mainly due to enhancements in the glow-like discharge and the surface potential increment, with the latter being more important when the AC voltage is higher.

  15. High-voltage plasma interactions calculations using NASCAP/LEO

    NASA Technical Reports Server (NTRS)

    Mandell, M. J.; Katz, I.

    1990-01-01

    This paper reviews four previous simulations (two laboratory and two space-flight) of interactions of a high-voltage spacecraft with a plasma under low-earth orbit conditions, performed using a three-dimensional computer code NASCAP/LEO. Results show that NASCAP/LEO can perform meaningful simulations of high-voltage plasma interactions taking into account three-dimensional effects of geometry, spacecraft motion, and magnetic field. Two new calculations are presented: (1) for current collection by 1-mm pinholes in wires (showing that a pinhole in a wire can collect far more current than a similar pinhole in a flat plate); and (2) current collection by Charge-2 mother vehicle launched in December 1985. It is shown that the Charge-2 calculations predicted successfully ion collection at negative bias, the floating potential of a probe outside or inside the sheath under negative bias conditions, and magnetically limited electron collection under electron beam operation at high altitude.

  16. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test: Preprint

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-07-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or coulombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  17. System Voltage Potential-Induced Degradation Mechanisms in PV Modules and Methods for Test

    SciTech Connect

    Hacke, P.; Terwilliger, K.; Smith, R.; Glick, S.; Pankow, J.; Kempe, M.; Kurtz, S.; Bennett, I.; Kloos, M.

    2011-01-01

    Over the past decade, degradation and power loss have been observed in PV modules resulting from the stress exerted by system voltage bias. This is due in part to qualification tests and standards that do not adequately evaluate for the durability of modules to the long-term effects of high voltage bias experienced in fielded arrays. High voltage can lead to module degradation by multiple mechanisms. The extent of the voltage bias degradation is linked to the leakage current or culombs passed from the silicon active layer through the encapsulant and glass to the grounded module frame, which can be experimentally determined; however, competing processes make the effect non-linear and history-dependent. Appropriate testing methods and stress levels are described that demonstrate module durability to system voltage potential-induced degradation (PID) mechanisms. This information, along with outdoor testing that is in progress, is used to estimate the acceleration factors needed to evaluate the durability of modules to system voltage stress. Na-rich precipitates are observed on the cell surface after stressing the module to induce PID in damp heat with negative bias applied to the active layer.

  18. Impact of roll-over-shaped current-voltage characteristics and device properties of Ag(In,Ga)Se2 solar cells

    NASA Astrophysics Data System (ADS)

    Umehara, Takeshi; Nakada, Kazuyoshi; Yamada, Akira

    2017-01-01

    The roll-over shape often observed in the current-voltage curve of Ag(In,Ga)Se2 (AIGS) solar cells degrades the open circuit voltage (V OC) and particularly the fill factor (FF). The origin of the roll-over shape was investigated by experimental measurements and device simulation. By combining AC Hall measurement and the peel-off process, we estimated the AIGS hole concentration to be 2.2 × 1012 cm-3. Theoretical simulation revealed that the roll-over shape is attributed to this low hole concentration. Under an applied forward bias, the band bending near the back contact of the AIGS layer forms an intrinsic semiconductor owing to the injected electrons, leading to the formation of an inverted diode. To solve this issue, the addition of NaF by the postdeposition treatment of the AIGS layer was performed. As a result, the hole concentration of the AIGS layer increased, significantly improving its V OC, FF, and conversion efficiency.

  19. Surface potential distribution and airflow performance of different air-exposed electrode plasma actuators at different alternating current/direct current voltages

    SciTech Connect

    Yang, Liang; Yan, Hui-Jie; Qi, Xiao-Hua; Hua, Yue; Ren, Chun-Sheng

    2015-04-15

    Asymmetric surface dielectric barrier discharge (SDBD) plasma actuators have been intensely studied for a number of years due to their potential applications for aerodynamic control. In this paper, four types of actuators with different configurations of exposed electrode are proposed. The SDBD actuators investigated are driven by dual-power supply, referred to as a fixed AC high voltage and an adjustable DC bias. The effects of the electrode structures on the dielectric surface potential distribution, the electric wind velocity, and the mean thrust production are studied, and the dominative factors of airflow acceleration behavior are revealed. The results have shown that the actions of the SDBD actuator are mainly dependent on the geometry of the exposed electrode. Besides, the surface potential distribution can effectively affect the airflow acceleration behavior. With the application of an appropriate additional DC bias, the surface potential will be modified. As a result, the performance of the electric wind produced by a single SDBD can be significantly improved. In addition, the work also illustrates that the actuators with more negative surface potential present better mechanical performance.

  20. Variable frequency inverter for ac induction motors with torque, speed and braking control

    NASA Technical Reports Server (NTRS)

    Nola, F. J. (Inventor)

    1975-01-01

    A variable frequency inverter was designed for driving an ac induction motor which varies the frequency and voltage to the motor windings in response to varying torque requirements for the motor so that the applied voltage amplitude and frequency are of optimal value for any motor load and speed requirement. The slip frequency of the motor is caused to vary proportionally to the torque and feedback is provided so that the most efficient operating voltage is applied to the motor. Winding current surge is limited and a controlled negative slip causes motor braking and return of load energy to a dc power source.

  1. Biasing GPCR signaling from inside.

    PubMed

    Shukla, Arun K

    2014-01-28

    The discovery of "functional selectivity" or "biased signaling" through G protein-coupled receptors (GPCRs) has redefined the classical GPCR signaling paradigm. Moreover, the therapeutic potential of biased signaling by and biased ligands for GPCRs is changing the landscape of GPCR drug discovery. The concept of biased signaling has primarily been developed and discussed in the context of ligands that bind to the extracellular regions of GPCRs. However, two recent reports demonstrate that it is also possible to bias GPCR signaling from inside the cell by targeting intracellular regions of these receptors. These findings present a novel handle for delineating the functional outcomes of biased signaling by GPCRs. Moreover, these approaches also uncover a previously unexplored framework for biasing GPCR signaling for drug discovery.

  2. Layoff Handling Still Lags ACS Standards.

    ERIC Educational Resources Information Center

    Chemical and Engineering News, 1981

    1981-01-01

    Reviews termination procedures of professional chemists and the compliance of these terminations to the American Chemical Society's (ACS's) Professional Employment Guidelines. Provides the ACS guidelines. (DS)

  3. System and method for monitoring and controlling stator winding temperature in a de-energized AC motor

    DOEpatents

    Lu, Bin [Kenosha, WI; Luebke, Charles John [Sussex, WI; Habetler, Thomas G [Snellville, GA; Zhang, Pinjia [Atlanta, GA; Becker, Scott K [Oak Creek, WI

    2011-12-27

    A system and method for measuring and controlling stator winding temperature in an AC motor while idling is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of a multi-phase AC motor. The circuit further includes a plurality of switching devices to control current flow and terminal voltages in the multi-phase AC motor and a controller connected to the circuit. The controller is configured to activate the plurality of switching devices to create a DC signal in an output of the motor control device corresponding to an input to the multi-phase AC motor, determine or estimate a stator winding resistance of the multi-phase AC motor based on the DC signal, and estimate a stator temperature from the stator winding resistance. Temperature can then be controlled and regulated by DC injection into the stator windings.

  4. Determination of threshold and maximum operating electric stresses for selected high voltage insulations: Investigation of aged polymeric dielectric cable. Final report

    SciTech Connect

    Eager, G.S. Jr.; Seman, G.W.; Fryszczyn, B.

    1995-11-01

    Based on the successful completion of the extensive research project DOE/ET/29303-1 February 1982 to develop a new method for the determination of threshold voltage in XLPE and EPR insulated cables, tests were initiated to establish the maximum safe operating voltage stresses of crosslinked polyethylene insulated cables that become wet when they operate in a moist environment. The present report covers the measurement of the threshold voltage, the a.c. breakdown voltage and the impulse breakdown voltage of XLPE cable after undergoing accelerated laboratory aging in water. Model and 15 kV XLPE cables were manufactured in commercial equipment using state-of-the-art semiconducting shields and XLPE insulation. The threshold voltage, a.c. voltage breakdown and impulse voltage breakdown of the model cables were determined before aging, after aging one week and after aging 26 weeks. The model cable, following 26 weeks aging, was dried by passing dry gas through the conductor interstices which removed moisture from the cable. The threshold voltage, the a.c. voltage breakdown and the impulse voltage breakdown of the XLPE model cable after drying was measured.

  5. Three-Phase and Six-Phase AC at the Lab Bench

    ERIC Educational Resources Information Center

    Caplan, George M.

    2009-01-01

    Utility companies generate three-phase electric power, which consists of three sinusoidal voltages with phase angles of 0 degrees, 120 degrees, and 240 degrees. The ac generators described in most introductory textbooks are single-phase generators, so physics students are not likely to learn about three-phase power. I have developed a simple way…

  6. AC photovoltaic module magnetic fields

    SciTech Connect

    Jennings, C.; Chang, G.J.; Reyes, A.B.; Whitaker, C.M.

    1997-12-31

    Implementation of alternating current (AC) photovoltaic (PV) modules, particularly for distributed applications such as PV rooftops and facades, may be slowed by public concern about electric and magnetic fields (EMF). This paper documents magnetic field measurements on an AC PV module, complementing EMF research on direct-current PV modules conducted by PG and E in 1993. Although not comprehensive, the PV EMF data indicate that 60 Hz magnetic fields (the EMF type of greatest public concern) from PV modules are comparable to, or significantly less than, those from household appliances. Given the present EMF research knowledge, AC PV module EMF may not merit considerable concern.

  7. Electrical Characteristics of Self-Biased Channel Diode

    NASA Astrophysics Data System (ADS)

    Sugawara, Fumihiko; Yoshida, Tatsuya; Hoshi, Hideaki; Yamaguchi, Hideo; Ohnuma, Koichi

    A new low-loss diode, a self-biased channel diode, is described. In order to achieve a two-terminal operation by using a self-bias, the shunt electrode of the source and gate of the conventional DMOSFET with a floating body is adopted in this diode. By utilizing a DMOSFET, this proposed diode attains a high breakdown voltage compared with a lateral MOSFET. In this device, forward conduction is caused by the self-gate bias created by applying a positive voltage to the shunt electrode of the source and gate with respect to the drain. The direction of forward conduction is opposite to that of forward conduction in a conventional DMOSFET. In the reverse-bias state, the reverse current is very small without any bias owing to the shunt of the source and the gate electrode. In this report, the operational mechanism and electrical characteristics of the device fabricated for the proposed diode are discussed. From the experimental results, it is clear that at room temperature, the on-state voltage of the proposed diode is between that of the Ti-SBD and Cr-SBD. The simulated I-V characteristics are consistent with the measured values. From the simulation results, the proposed diode, in which a thin gate oxide layer and a high integration density of the DMOSFET cell are used, shows lower power loss in the temperature range 25-75°C than does the Cr-SBD. At high temperatures the power loss in the proposed diode is lower than that observed in the Ti-SBD and Cr-SBD which easily fall into thermal runaway.

  8. Charge order in an interacting monolayer under transverse bias

    NASA Astrophysics Data System (ADS)

    Ludwig, Tim; Timm, Carsten

    2016-10-01

    A monolayer of molecules or quantum dots sandwiched between electrodes can be driven out of equilibrium by the application of a bias voltage between the electrodes. We study charge ordering, i.e., the spontaneous formation of a charge density wave, and the perpendicular current in such a system within a master-equation approach augmented by mean-field and classical Monte Carlo methods. Our approach is suitable for weak tunneling between the monolayer and the electrodes. For a square lattice with nearest-neighbor Coulomb repulsion, we present a comprehensive study of the zero-temperature phases controlled by the onsite energy, the bias voltage, and the degeneracy of the occupied single-site state. One of the most interesting results is the prediction of a conducting charge-density-wave phase that only occurs at a finite-bias voltage. We also study the universality classes of the phase transitions towards charge-ordered states at zero and nonzero temperatures. While all transitions at T >0 and some at T =0 belong to the two-dimensional Ising universality class, we also find an absorbing-to-active phase transition in the Z2 symmetric directed percolation (DP2) class at T =0 .

  9. High voltage electrical amplifier having a short rise time

    DOEpatents

    Christie, David J.; Dallum, Gregory E.

    1991-01-01

    A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

  10. Characteristics of pulsed power generator by versatile inductive voltage adder

    NASA Astrophysics Data System (ADS)

    Yatsui, Kiyoshi; Shimiya, Kouichi; Masugata, Katsumi; Shigeta, Masao; Shibata, Kazuhiko

    2005-10-01

    A pulsed power generator by inductive voltage adder, versatile inductive voltage adder (VIVA-I), which features a high average potential gradient (2.5 MV/m), was designed and is currently in operation,. It was designed to produce an output pulse of 4 MV/60 ns by adding 2 MV pulses in two-stages of induction cells, where amorphous cores are installed. As a pulse forming line, we used a Blumlein line with the switching reversed, where cores are automatically biased due to the presence of prepulse. Good reproducibility was obtained even in the absence of the reset pulse. Within [similar]40% of full charge voltage, pulsed power characteristics of Marx generator, pulse forming line (PFL), transmission line (TL), and induction cells were tested for three types of loads; open-circuit, dummy load of liquid (CuSO4) resistor, and electron beam diode. In the open-circuit test, [similar]2.0 MV of output voltage was obtained with good reproducibility. Dependences of output voltage on diode impedances were evaluated by using various dummy loads, and the results were found as expected. An electron-beam diode was operated successfully, and [similar]18 kA of beam current was obtained at the diode voltage of [similar]1 MV.

  11. Methods, systems and apparatus for controlling operation of two alternating current (AC) machines

    DOEpatents

    Gallegos-Lopez, Gabriel [Torrance, CA; Nagashima, James M [Cerritos, CA; Perisic, Milun [Torrance, CA; Hiti, Silva [Redondo Beach, CA

    2012-06-05

    A system is provided for controlling two alternating current (AC) machines via a five-phase PWM inverter module. The system comprises a first control loop, a second control loop, and a current command adjustment module. The current command adjustment module operates in conjunction with the first control loop and the second control loop to continuously adjust current command signals that control the first AC machine and the second AC machine such that they share the input voltage available to them without compromising the target mechanical output power of either machine. This way, even when the phase voltage available to either one of the machines decreases, that machine outputs its target mechanical output power.

  12. A system for tranmitting low frequency analog signals over ac power lines

    DOEpatents

    Baker, S.P.; Durall, R.L.; Haynes, H.D.

    1987-07-30

    A system for transmitting low frequency analog signals over ac power lines using FM modulation. A low frequency analog signal to be transmitted is first applied to a voltage-to-frequency converter where it is converted to a signal whose frequency varies in proportion to the analog signal amplitude. This signal is then used to modulate the carrier frequency of an FM transmitter coupled to an ac power line. The modulation signal frequency range is selected to be within the response band of the FM transmitter. The FM modulated carrier signal is received by an FM receiver coupled to the ac power line, demodulated and the demodulated signal frequency is converted by a frequency-to-voltage converter back to the form of the original low frequency analog input signal. 4 figs.

  13. System for transmitting low frequency analog signals over AC power lines

    DOEpatents

    Baker, Steven P.; Durall, Robert L.; Haynes, Howard D.

    1989-01-01

    A system for transmitting low frequency analog signals over AC power lines using FM modulation. A low frequency analog signal to be transmitted is first applied to a voltage-to-frequency converter where it is converted to a signal whose frequency varies in proportion to the analog signal amplitude. This signal is then used to modulate the carrier frequency of an FM transmitter coupled to an AC power line. The modulation signal frequency range in selected to be within the response band of the FM transmitter. The FM modulated carrier signal is received by an FM receiver coupled to the AC power line, demodulated and the demodulated signal frequency is converted by a frequency-to-voltage converter back to the form of the original low frequency analog input signal.

  14. System for transmitting low frequency analog signals over AC power lines

    DOEpatents

    Baker, Steven P.; Durall, Robert L.; Haynes, Howard D.

    1989-09-05

    A system for transmitting low frequency analog signals over AC power lines using FM modulation. A low frequency analog signal to be transmitted is first applied to a voltage-to-frequency converter where it is converted to a signal whose frequency varies in proportion to the analog signal amplitude. This signal is then used to modulate the carrier frequency of an FM transmitter coupled to an AC power line. The modulation signal frequency range in selected to be within the response band of the FM transmitter. The FM modulated carrier signal is received by an FM receiver coupled to the AC power line, demodulated and the demodulated signal frequency is converted by a frequency-to-voltage converter back to the form of the original low frequency analog input signal.

  15. Growth of oxide exchange bias layers

    DOEpatents

    Chaiken, Alison; Michel, Richard P.

    1998-01-01

    An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

  16. Operation and biasing for single device equivalent to CMOS

    DOEpatents

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  17. Bias temperature instability in tunnel field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O’uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

    2017-04-01

    We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal–oxide–semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

  18. Improved transistorized AC motor controller for battery powered urban electric passenger vehicles

    NASA Technical Reports Server (NTRS)

    Peak, S. C.

    1982-01-01

    An ac motor controller for an induction motor electric vehicle drive system was designed, fabricated, tested, evaluated, and cost analyzed. A vehicle performance analysis was done to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of ac motor and ac controller requirements. The power inverter is a three-phase bridge using power Darlington transistors. The induction motor was optimized for use with an inverter power source. The drive system has a constant torque output to base motor speed and a constant horsepower output to maximum speed. A gear shifting transmission is not required. The ac controller was scaled from the base 20 hp (41 hp peak) at 108 volts dec to an expanded horsepower and battery voltage range. Motor reversal was accomplished by electronic reversal of the inverter phase sequence. The ac controller can also be used as a boost chopper battery charger. The drive system was tested on a dynamometer and results are presented. The current-controlled pulse width modulation control scheme yielded improved motor current waveforms. The ac controller favors a higher system voltage.

  19. Transistor voltage comparator performs own sensing

    NASA Technical Reports Server (NTRS)

    Cliff, R. A.

    1965-01-01

    Detection of the highest voltage input among a group of varying voltage inputs is accomplished by a transistorized voltage comparison circuit. The collector circuits of the transistors perform the sensing function. Input voltage levels are governed by the transistors.

  20. Design and implementation of co-operative control strategy for hybrid AC/DC microgrids

    NASA Astrophysics Data System (ADS)

    Mahmud, Rasel

    This thesis is mainly divided in two major sections: 1) Modeling and control of AC microgrid, DC microgrid, Hybrid AC/DC microgrid using distributed co-operative control, and 2) Development of a four bus laboratory prototype of an AC microgrid system. At first, a distributed cooperative control (DCC) for a DC microgrid considering the state-of-charge (SoC) of the batteries in a typical plug-in-electric-vehicle (PEV) is developed. In DC microgrids, this methodology is developed to assist the load sharing amongst the distributed generation units (DGs), according to their ratings with improved voltage regulation. Subsequently, a DCC based control algorithm for AC microgrid is also investigated to improve the performance of AC microgrid in terms of power sharing among the DGs, voltage regulation and frequency deviation. The results validate the advantages of the proposed methodology as compared to traditional droop control of AC microgrid. The DCC-based control methodology for AC microgrid and DC microgrid are further expanded to develop a DCC-based power management algorithm for hybrid AC/DC microgrid. The developed algorithm for hybrid microgrid controls the power flow through the interfacing converter (IC) between the AC and DC microgrids. This will facilitate the power sharing between the DGs according to their power ratings. Moreover, it enables the fixed scheduled power delivery at different operating conditions, while maintaining good voltage regulation and improved frequency profile. The second section provides a detailed explanation and step-by-step design and development of an AC/DC microgrid testbed. Controllers for the three-phase inverters are designed and tested on different generation units along with their corresponding inductor-capacitor-inductor (LCL) filters to eliminate the switching frequency harmonics. Electric power distribution line models are developed to form the microgrid network topology. Voltage and current sensors are placed in the proper

  1. AC and lightning performance of fiberglass crossarms aged in 115 kV transmission line

    SciTech Connect

    Grzybowski, S. . Dept. of Electrical and Computer Engineering); Jenkins, E.B. . Generation and Transmission Group)

    1993-10-01

    This paper presents the results of an investigation of the electrical performance of 115 kV transmission line fiberglass cross-arm used by Mississippi Power and Light Company. A transmission line fiberglass crossarm removed from service and companion cross-arms outdoors but not in service were examined. The evaluation of electrical performance was based on flashover voltage value at AC voltage and standard lightning impulses as well as under dry and wet conditions. The tests were performed in the Mississippi State University High Voltage Laboratory. The obtained flashover voltages show no large differences in electrical strength of fiberglass crossarms removed from service and those stored outdoors. The Added CFO voltage by fiberglass crossarm to the porcelain suspension insulators is presented versus the length of the fiberglass crossarm for dry and wet conditions.

  2. Development of dielectrophoresis separator with an insulating porous membrane using DC-Offset AC Electric Fields.

    PubMed

    Hakoda, Masaru

    2016-09-01

    Our previous studies revealed that the dielectrophoresis method is effective for separating cells having different dielectric properties. The purpose of this study was to evaluate the separation characteristics of two kinds of cells by direct current (DC) voltage offset/alternating current (AC) voltage using an insulating porous membrane dielectrophoretic separator. The separation device gives dielectrophoretic (DEP) force and electrophoretic (EP) force to dispersed particles by applying the DC-offset AC voltage. This device separates cells of different DEP properties by adopting a structure in which only the parallel plate electrodes and the insulating porous membrane are disposed in the flow path through which the cell-suspension flows. The difference in the retention ratios of electrically homogeneous 4.5 μm or 20.0 μm diameter standard particles was a maximum of 82 points. Furthermore, the influences of the AC voltage or offset voltage on the retention ratios of mouse hybridoma 3-2H3 cells and horse red blood cells (HRBC) were investigated. The difference in the retention ratio of the two kinds of cells was a maximum of 56 points. The separation efficiency of this device is expected to be improved by changing the device shape, number of pores, and pore placement. © 2016 American Institute of Chemical Engineers Biotechnol. Prog., 32:1292-1300, 2016.

  3. Low voltage drop plasma switch for inverter and modulator applications

    NASA Astrophysics Data System (ADS)

    Goebel, D. M.; Poeschel, R. L.; Schumacher, R. W.

    1993-08-01

    A low forward voltage drop plasma switch has been developed for high-efficiency inverter and modulator applications. The switch, called the HOLLOTRON, is based on a grid-controlled, thermionic hollow-cathode discharge. A low forward voltage drop (10-20 V) is achieved by operating the hollow-cathode discharge in a static gas pressure of xenon. The dense plasma generated in the Ba-oxide dispenser hollow cathode is spread over a relatively large control grid area by a diverging magnetic field superimposed on the discharge. Interruption of the discharge current at high current densities (≳4 A/cm2) over the grid area is achieved by biasing the control grid sufficiently negative with respect to the plasma. The HOLLOTRON switch has demonstrated voltage stand-off of up to 20 kV, switching times of ≤0.3 μs, and pulse repetition frequencies of 20 kHz at 50% duty.

  4. Bias modification training can alter approach bias and chocolate consumption.

    PubMed

    Schumacher, Sophie E; Kemps, Eva; Tiggemann, Marika

    2016-01-01

    Recent evidence has demonstrated that bias modification training has potential to reduce cognitive biases for attractive targets and affect health behaviours. The present study investigated whether cognitive bias modification training could be applied to reduce approach bias for chocolate and affect subsequent chocolate consumption. A sample of 120 women (18-27 years) were randomly assigned to an approach-chocolate condition or avoid-chocolate condition, in which they were trained to approach or avoid pictorial chocolate stimuli, respectively. Training had the predicted effect on approach bias, such that participants trained to approach chocolate demonstrated an increased approach bias to chocolate stimuli whereas participants trained to avoid such stimuli showed a reduced bias. Further, participants trained to avoid chocolate ate significantly less of a chocolate muffin in a subsequent taste test than participants trained to approach chocolate. Theoretically, results provide support for the dual process model's conceptualisation of consumption as being driven by implicit processes such as approach bias. In practice, approach bias modification may be a useful component of interventions designed to curb the consumption of unhealthy foods.

  5. Shape Oscillation of a drop in ac electrowetting.

    PubMed

    Oh, Jung Min; Ko, Sung Hee; Kang, Kwan Hyoung

    2008-08-05

    A sessile drop oscillates when an ac voltage is applied in electrowetting. The oscillation results from the time-varying electrical force concentrated on the three-phase contact line. Little is known about the feature of drop oscillation in electrowetting. In the present work, the drop oscillations are observed systematically, and a theoretical model is developed to analyze the oscillation. It is revealed that resonance occurs at certain frequencies and the oscillation pattern is significantly dependent on the applied ac frequencies. The domain perturbation method is used to derive the shape-mode equations under the assumptions of a weak viscous effect and small drop deformation. The electrical force concentrated on the three-phase contact line is approximated as a delta function, which is decomposed and substituted into each shape-mode equation as a forcing term. The theoretical results for the shape and frequency responses are compared with experimental results, which shows qualitative agreement.

  6. AN ASSESSMENT OF HIGH-VOLTAGE DC ELECTRICAL POWER IN AIRCRAFT ELECTRICAL SYSTEMS.

    DTIC Science & Technology

    If the presently installed three-phase ac transmission system on aircraft were replaced by a higher voltage dc ( HVDC ) transmission using a ground...from one- to two-thirds of the total electrical system weight. HVDC may have some disadvantages such as higher short-circuit currents, some increase in

  7. Restrictions on TWT Helix Voltage Ripple for Acceptable Notch Filter Performance

    SciTech Connect

    Hyslop, B.

    1984-12-01

    An ac ripple on the helix voltage of the 1-2 GHz TWT's creates FM sidebands that cause amplitude and phase modulation of the microwave TWT output signal. A limit of 16 volts peak-to-peak is required for acceptable superconducting notch filter performance.

  8. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    SciTech Connect

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  9. Power control for ac motor

    NASA Technical Reports Server (NTRS)

    Dabney, R. W. (Inventor)

    1984-01-01

    A motor controller employing a triac through which power is supplied to a motor is described. The open circuit voltage appearing across the triac controls the operation of a timing circuit. This timing circuit triggers on the triac at a time following turn off which varies inversely as a function of the amplitude of the open circuit voltage of the triac.

  10. IREB Converter to AC Pulses.

    DTIC Science & Technology

    and the end of the center conductor. the modulated IREB induces a voltage in the coaxial transmission line. This voltage appears across the gap to slow ... down the electrons and to convert the kinetic energy of the IREB into electrical energy that propagates along the coaxial transmission line. (PATENT)

  11. Outcome predictability biases learning.

    PubMed

    Griffiths, Oren; Mitchell, Chris J; Bethmont, Anna; Lovibond, Peter F

    2015-01-01

    Much of contemporary associative learning research is focused on understanding how and when the associative history of cues affects later learning about those cues. Very little work has investigated the effects of the associative history of outcomes on human learning. Three experiments extended the "learned irrelevance" paradigm from the animal conditioning literature to examine the influence of an outcome's prior predictability on subsequent learning of relationships between cues and that outcome. All 3 experiments found evidence for the idea that learning is biased by the prior predictability of the outcome. Previously predictable outcomes were readily associated with novel predictive cues, whereas previously unpredictable outcomes were more readily associated with novel nonpredictive cues. This finding highlights the importance of considering the associative history of outcomes, as well as cues, when interpreting multistage designs. Associative and cognitive explanations of this certainty matching effect are discussed.

  12. The intentionality bias and schizotypy.

    PubMed

    Moore, J W; Pope, A

    2014-01-01

    The "intentionality bias" refers to our automatic tendency to judge other people's actions to be intentional. In this experiment we extended research on this effect in two key ways. First, we developed a novel nonlinguistic task for assessing the intentionality bias. This task used video stimuli of ambiguous movements. Second, we investigated the relationship between the strength of this bias and schizotypy (schizophrenia-like symptoms in healthy individuals). Our results showed that the intentionality bias was replicated for the video stimuli and also that this bias is stronger in those individuals scoring higher on the schizotypy rating scales. Overall these findings lend further support for the existence of the intentionality bias. We also discuss the possible relevance of these findings for our understanding of certain symptoms of schizophrenic illness.

  13. High voltage feedthrough bushing

    DOEpatents

    Brucker, John P.

    1993-01-01

    A feedthrough bushing for a high voltage diode provides for using compression sealing for all sealing surfaces. A diode assembly includes a central conductor extending through the bushing and a grading ring assembly circumferentially surrounding and coaxial with the central conductor. A flexible conductive plate extends between and compressively seals against the central conductor and the grading ring assembly, wherein the flexibility of the plate allows inner and outer portions of the plate to axially translate for compression sealing against the central conductor and the grading ring assembly, respectively. The inner portion of the plate is bolted to the central conductor for affecting sealing. A compression beam is also bolted to the central conductor and engages the outer portion of the plate to urge the outer portion toward the grading ring assembly to obtain compression sealing therebetween.

  14. High voltage isolation transformer

    NASA Technical Reports Server (NTRS)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  15. Generator voltage stabilisation for series-hybrid electric vehicles.

    PubMed

    Stewart, P; Gladwin, D; Stewart, J; Cowley, R

    2008-04-01

    This paper presents a controller for use in speed control of an internal combustion engine for series-hybrid electric vehicle applications. Particular reference is made to the stability of the rectified DC link voltage under load disturbance. In the system under consideration, the primary power source is a four-cylinder normally aspirated gasoline internal combustion engine, which is mechanically coupled to a three-phase permanent magnet AC generator. The generated AC voltage is subsequently rectified to supply a lead-acid battery, and permanent magnet traction motors via three-phase full bridge power electronic inverters. Two complementary performance objectives exist. Firstly to maintain the internal combustion engine at its optimal operating point, and secondly to supply a stable 42 V supply to the traction drive inverters. Achievement of these goals minimises the transient energy storage requirements at the DC link, with a consequent reduction in both weight and cost. These objectives imply constant velocity operation of the internal combustion engine under external load disturbances and changes in both operating conditions and vehicle speed set-points. An electronically operated throttle allows closed loop engine velocity control. System time delays and nonlinearities render closed loop control design extremely problematic. A model-based controller is designed and shown to be effective in controlling the DC link voltage, resulting in the well-conditioned operation of the hybrid vehicle.

  16. A high voltage method for measuring low capacitance for tomography.

    PubMed

    Lu, Decai; Shao, Fuqun; Guo, Zhiheng

    2009-05-01

    Low capacitance measurement is involved in many industrial applications, especially in the applications of electrical capacitance tomography (ECT). Most of the low capacitance measurement circuits employ an ac-based method or a charge/discharge method because of high sensitivity, high resolution, and immunity to stray capacitance; and its excitation or charge voltage are not more than 20 V. When ECT techniques for large industrial equipment such as blast furnaces or grain barns are explored, the existing methods for measuring low capacitance have some limitations. This paper proposes a high excitation voltage ac-based method for measuring low capacitance to improve the resolution of measurement. The method uses a high excitation voltage of several hundred volts and a transformer ratio arms as the C/V transducer. Experimental results indicate that the new method has a resolution of 0.005 fF, a good stability (about 0.003 fF over 4 h) and linearity (0.9992).

  17. An implantable neurostimulator with an integrated high-voltage inductive power-recovery frontend

    NASA Astrophysics Data System (ADS)

    Yuan, Wang; Xu, Zhang; Ming, Liu; Peng, Li; Hongda, Chen

    2014-10-01

    This paper present a highly-integrated neurostimulator with an on-chip inductive power-recovery frontend and high-voltage stimulus generator. In particular, the power-recovery frontend includes a high-voltage full-wave rectifier (up to 100 V AC input), high-voltage series regulators (24/5 V outputs) and a linear regulator (1.8/3.3 V output) with bandgap voltage reference. With the high voltage output of the series regulator, the proposed neurostimulator could deliver a considerably large current in high electrode-tissue contact impedance. This neurostimulator has been fabricated in a CSMC 1 μm 5/40/700 V BCD process and the total silicon area including pads is 5.8 mm2. Preliminary tests are successful as the neurostimulator shows good stability under a 13.56 MHz AC supply. Compared to previously reported works, our design has advantages of a wide induced voltage range (26-100 V), high output voltage (up to 24 V) and high-level integration, which are suitable for implantable neurostimulators.

  18. Focal lingual dystonia, urinary incontinence, and sensory deficits secondary to low voltage electrocution: case report and literature review.

    PubMed

    Baskerville, J R; McAninch, S A

    2002-07-01

    Electrocution injuries are well reported in review articles and cases of high voltage electrocution injury are abundant. However, reports of low voltage electrocution injury are few. A case is presented of low voltage shock from a 120 volt AC source with presentation, acute and chronic course, and a five year follow up. The patient experienced several unusual complications of low voltage electrocution: a persistent right tongue deviation, which initially presents as an isolated hypoglossal nerve palsy, but subsequently manifests as a focal lingual dystonia; total body paresthesia with urinary incontinence; and persistent sensory deficits to the face and tongue.

  19. Comparative High Voltage Impulse Measurement

    PubMed Central

    FitzPatrick, Gerald J.; Kelley, Edward F.

    1996-01-01

    A facility has been developed for the determination of the ratio of pulse high voltage dividers over the range from 10 kV to 300 kV using comparative techniques with Kerr electro-optic voltage measurement systems and reference resistive voltage dividers. Pulse voltage ratios of test dividers can be determined with relative expanded uncertainties of 0.4 % (coverage factor k = 2 and thus a two standard deviation estimate) or less using the complementary resistive divider/Kerr cell reference systems. This paper describes the facility and specialized procedures used at NIST for the determination of test voltage divider ratios through comparative techniques. The error sources and special considerations in the construction and use of reference voltage dividers to minimize errors are discussed, and estimates of the measurement uncertainties are presented. PMID:27805083

  20. Enhanced surface production in H- ion sources by introducing a negatively biased secondary electrodea)

    NASA Astrophysics Data System (ADS)

    An, YoungHwa; Jung, BongKi; Hwang, Y. S.

    2010-02-01

    A transformer coupled plasma negative hydrogen ion source with an external rf antenna has been developed at SNU, which is capable of continuous operation with long lifetime. A positively biased plasma electrode (PE) has been successfully used for the optimization of H- extraction. With molybdenum-coated stainless steel PE, the enhancement of H- production at the electrode surface was observed at the bias voltage lower than the plasma potential. However, the low bias voltage is unfavorable to H- beam extraction since the negative ions are repelled. A second electrode is inserted in front of the PE to enhance H- production at the electrode surface without impeding beam extraction. By biasing the secondary electrode (SE) more negatively, H- production is clearly enhanced although the SE itself reduces H- beam currents because of suppressed electron transport in front of the PE. In this configuration enhancement of surface productions is most pronounced in tantalum electrode among various electrode materials.