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Sample records for access memory based

  1. Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

    SciTech Connect

    Ohmacht, Martin

    2014-09-09

    In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

  2. Materials selection for oxide-based resistive random access memories

    SciTech Connect

    Guo, Yuzheng; Robertson, John

    2014-12-01

    The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO{sub 2}, TiO{sub 2}, Ta{sub 2}O{sub 5}, and Al{sub 2}O{sub 3}, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta{sub 2}O{sub 5} RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.

  3. Remote direct memory access

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.

    2012-12-11

    Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

  4. Atomic memory access hardware implementations

    DOEpatents

    Ahn, Jung Ho; Erez, Mattan; Dally, William J

    2015-02-17

    Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

  5. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    SciTech Connect

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-05-18

    This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

  6. Is random access memory random?

    NASA Technical Reports Server (NTRS)

    Denning, P. J.

    1986-01-01

    Most software is contructed on the assumption that the programs and data are stored in random access memory (RAM). Physical limitations on the relative speeds of processor and memory elements lead to a variety of memory organizations that match processor addressing rate with memory service rate. These include interleaved and cached memory. A very high fraction of a processor's address requests can be satified from the cache without reference to the main memory. The cache requests information from main memory in blocks that can be transferred at the full memory speed. Programmers who organize algorithms for locality can realize the highest performance from these computers.

  7. Nonvolatile random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1994-01-01

    A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

  8. Characteristics and mechanism study of cerium oxide based random access memories

    SciTech Connect

    Hsieh, Cheng-Chih; Roy, Anupam; Rai, Amritesh; Chang, Yao-Feng; Banerjee, Sanjay K.

    2015-04-27

    In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeO{sub x} is considered as a relatively new material to other dielectrics. Since research on CeO{sub x} based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeO{sub x} RRAMs and also compare electrical performance of Al/CeO{sub x}/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.

  9. Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

    NASA Astrophysics Data System (ADS)

    Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

    2016-04-01

    The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

  10. Garnet Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.

  11. Plated wire random access memories

    NASA Technical Reports Server (NTRS)

    Gouldin, L. D.

    1975-01-01

    A program was conducted to construct 4096-work by 18-bit random access, NDRO-plated wire memory units. The memory units were subjected to comprehensive functional and environmental tests at the end-item level to verify comformance with the specified requirements. A technical description of the unit is given, along with acceptance test data sheets.

  12. Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

    NASA Astrophysics Data System (ADS)

    Huh, In; Cheon, Woo Young; Choi, Woo Young

    2016-04-01

    A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

  13. Magnetic Analog Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

    1991-01-01

    Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

  14. MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

    NASA Astrophysics Data System (ADS)

    Shenoy, Rohit S.; Burr, Geoffrey W.; Virwani, Kumar; Jackson, Bryan; Padilla, Alvaro; Narayanan, Pritish; Rettner, Charles T.; Shelby, Robert M.; Bethune, Donald S.; Raman, Karthik V.; BrightSky, Matthew; Joseph, Eric; Rice, Philip M.; Topuria, Teya; Kellock, Andrew J.; Kurdi, Bülent; Gopalakrishnan, Kailash

    2014-10-01

    Several attractive applications call for the organization of memristive devices (or other resistive non-volatile memory (NVM)) into large, densely-packed crossbar arrays. While resistive-NVM devices frequently possess some degree of inherent nonlinearity (typically 3-30× contrast), the operation of large (\\gt 1000×1000 device) arrays at low power tends to require quite large (\\gt 1e7) ON-to-OFF ratios (between the currents passed at high and at low voltages). One path to such large nonlinearities is the inclusion of a distinct access device (AD) together with each of the state-bearing resistive-NVM elements. While such an AD need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device. Several candidate ADs have been proposed, but obtaining high performance without requiring single-crystal silicon and/or the high processing temperatures of the front-end-of-the-line—which would eliminate any opportunity for 3D stacking—has been difficult. We review our work at IBM Research—Almaden on high-performance ADs based on Cu-containing mixed-ionic-electronic conduction (MIEC) materials [1-7]. These devices require only the low processing temperatures of the back-end-of-the-line, making them highly suitable for implementing multi-layer cross-bar arrays. MIEC-based ADs offer large ON/OFF ratios (\\gt 1e7), a significant voltage margin {{V}m} (over which current \\lt 10 nA), and ultra-low leakage (\\lt 10 pA), while also offering the high current densities needed for phase-change memory and the fully bipolar operation needed for high-performance RRAM. Scalability to critical lateral dimensions \\lt 30 nm and thicknesses \\lt 15 nm, tight distributions and 100% yield in large (512 kBit) arrays, long-term stability of the ultra-low leakage states, and sub-50 ns turn-ON times have all been demonstrated. Numerical modeling of these MIEC-based ADs shows that their operation depends on C{{u}+} mediated hole

  15. Parallel-access memory management using fast-fits

    SciTech Connect

    Johnson, T.

    1994-12-01

    The two most common approaches to managing shared-access memory-free lists and buddy system-have significant drawbacks. Free list algorithms have poor memory access characteristics, and buddy systems utilize their space inefficiently. In this paper, we present an alternative approach to parallel-access memory management based on the fast-fits algorithm. A fast-fits memory manager stores free blocks in a tree structure, providing fast access and efficient space use. Since the fast-fits algorithm accesses fewer blocks than a free list algorithm, it reduces the amount of cache invalidation overhead due to the memory manager. Our performance experiments show that the parallel-access fast-fits memory manager allows significantly greater access rates than a serial-access fast-fits memory manager does. We not that shared-memory multiprocessor systems need efficient dynamic storage allocators, both for system purposes and to support parallel programs.

  16. Memory availability and referential access

    PubMed Central

    Johns, Clinton L.; Gordon, Peter C.; Long, Debra L.; Swaab, Tamara Y.

    2013-01-01

    Most theories of coreference specify linguistic factors that modulate antecedent accessibility in memory; however, whether non-linguistic factors also affect coreferential access is unknown. Here we examined the impact of a non-linguistic generation task (letter transposition) on the repeated-name penalty, a processing difficulty observed when coreferential repeated names refer to syntactically prominent (and thus more accessible) antecedents. In Experiment 1, generation improved online (event-related potentials) and offline (recognition memory) accessibility of names in word lists. In Experiment 2, we manipulated generation and syntactic prominence of antecedent names in sentences; both improved online and offline accessibility, but only syntactic prominence elicited a repeated-name penalty. Our results have three important implications: first, the form of a referential expression interacts with an antecedent’s status in the discourse model during coreference; second, availability in memory and referential accessibility are separable; and finally, theories of coreference must better integrate known properties of the human memory system. PMID:24443621

  17. Physical and chemical mechanisms in oxide-based resistance random access memory.

    PubMed

    Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Hung, Ya-Chi; Syu, Yong-En; Chang, Yao-Feng; Chen, Min-Chen; Chu, Tian-Jian; Chen, Hsin-Lu; Pan, Chih-Hung; Shih, Chih-Cheng; Zheng, Jin-Cheng; Sze, Simon M

    2015-01-01

    In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

  18. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    SciTech Connect

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  19. High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

    PubMed Central

    2013-01-01

    We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible resistive switching behavior. After a 104-s retention time, the memory window of the device is still in accordance with excellent thermal stability, and a 10-year usage is still possible with the resistance ratio larger than 10 at room temperature and at 85°C. In addition, the operation speed of the device was estimated to be 500 ns for the reset operation and 800 ns for the set operation, which is fast enough for the usage of the memories in flexible circuits. Considering the excellent performance of the device fabricated by low-temperature atomic layer deposition, the process may promote the potential applications of oxide-based resistive random access memory in flexible integrated circuits. PMID:23421424

  20. A biohybrid dynamic random access memory.

    PubMed

    Sinclair, Jon; Granfeldt, Daniel; Pihl, Johan; Millingen, Maria; Lincoln, Per; Farre, Cecilia; Peterson, Lena; Orwar, Owe

    2006-04-19

    We report that GABA(A) receptors in a patch-clamped biological cell form a short-term memory circuit when integrated with a scanning-probe microfluidic device. Laminar patterns of receptor activators (agonists) provided by the microfluidic device define and periodically update the data input which is read and stored by the receptors as state distributions (based on intrinsic multistate kinetics). The memory is discharged over time and lasts for seconds to minutes depending on the input function. The function of the memory can be represented by an equivalent electronic circuit with striking similarity in function to a dynamic random access memory (DRAM) used in electronic computers. Multiplexed biohybrid memories may form the basis of large-scale integrated biocomputational/sensor devices with the curious ability to use chemical signals including odorants, neurotransmitters, chemical and biological warfare agents, and many more as input signals.

  1. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

    SciTech Connect

    Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok; Hyun Park, Ju; Su Jeon, Dong; Geun Kim, Tae

    2014-03-07

    The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

  2. Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations

    NASA Astrophysics Data System (ADS)

    de Araujo, C. I. L.; Alves, S. G.; Buda-Prejbeanu, L. D.; Dieny, B.

    2016-08-01

    A concept of multilevel thermally assisted magnetoresistive random-access memory is proposed and investigated by micromagnetic simulations. The storage cells are magnetic tunnel junctions in which the storage layer is exchange biased and in a vortex configuration. The reference layer is an unpinned soft magnetic layer. The stored information is encoded via the position of the vortex core in the storage layer. This position can be varied along two degrees of freedom: the radius and the in-plane angle. The information is read out from the amplitude and phase of the tunnel magnetoresistance signal obtained by applying a rotating field on the cell without heating the cell. Various configurations are compared in which the soft reference layer consists of either a simple ferromagnetic layer or a synthetic antiferromagnetic sandwich (SAF). Among those, the most practical one comprises a SAF reference layer in which the magnetostatic interaction between the SAF and storage layer is minimized. This type of cell should allow one to store at least 40 different states per cell representing more than five bits per cell.

  3. Dynamic computing random access memory

    NASA Astrophysics Data System (ADS)

    Traversa, F. L.; Bonani, F.; Pershin, Y. V.; Di Ventra, M.

    2014-07-01

    The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200-2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.

  4. Dynamic computing random access memory.

    PubMed

    Traversa, F L; Bonani, F; Pershin, Y V; Di Ventra, M

    2014-07-18

    The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200-2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.

  5. Memory access in shared virtual memory

    SciTech Connect

    Berrendorf, R.

    1992-09-01

    Shared virtual memory (SVM) is a virtual memory layer with a single address space on top of a distributed real memory on parallel computers. We examine the behavior and performance of SVM running a parallel program with medium-grained, loop-level parallelism on top of it. A simulator for the underlying parallel architecture can be used to examine the behavior of SVM more deeply. The influence of several parameters, such as the number of processors, page size, cold or warm start, and restricted page replication, is studied.

  6. Memory access in shared virtual memory

    SciTech Connect

    Berrendorf, R. )

    1992-01-01

    Shared virtual memory (SVM) is a virtual memory layer with a single address space on top of a distributed real memory on parallel computers. We examine the behavior and performance of SVM running a parallel program with medium-grained, loop-level parallelism on top of it. A simulator for the underlying parallel architecture can be used to examine the behavior of SVM more deeply. The influence of several parameters, such as the number of processors, page size, cold or warm start, and restricted page replication, is studied.

  7. Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

    PubMed Central

    Lv, Hangbing; Xu, Xiaoxin; Liu, Hongtao; Liu, Ruoyu; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming

    2015-01-01

    The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. As such, it is receiving additional focus to accelerate the commercialization process. To create a successful mass product, reliability issues must first be rigorously solved. In-depth understanding of the failure behavior of the ECM is essential for performance optimization. Here, we reveal the degradation of high resistance state behaves as the majority cases of the endurance failure of the HfO2 electrolyte based ECM cell. High resolution transmission electron microscopy was used to characterize the change in filament nature after repetitive switching cycles. The result showed that Cu accumulation inside the filament played a dominant role in switching failure, which was further supported by measuring the retention of cycle dependent high resistance state and low resistance state. The clarified physical picture of filament evolution provides a basic understanding of the mechanisms of endurance and retention failure, and the relationship between them. Based on these results, applicable approaches for performance optimization can be implicatively developed, ranging from material tailoring to structure engineering and algorithm design. PMID:25586207

  8. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    NASA Astrophysics Data System (ADS)

    Tomczak, Y.; Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Liu, E.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2016-01-01

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm2 after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  9. Impacts of Ion Irradiation on Hafnium oxide-based Resistive Random Access Memory Devices

    NASA Astrophysics Data System (ADS)

    He, Xiaoli

    The impacts of ion irradiation on so-called vacancy-change mechanism (VCM) and electrochemical-metallization mechanism (ECM) ReRAM devices based on HfO2 are investigated using various ion sources: H + (1 MeV), He+ (1 MeV), N+ (1 MeV), Ne+ (1.6 MeV) and Ar+ (2.75 MeV) over a range of total doses (105 -- 1011 rad(Si)) and fluences (1012 -- 1015 cm-2). VCM-ReRAM devices show robust resistive switching function after all irradiation experiments. VCM resistive switching parameters including set voltage (V set), reset voltage (Vreset), on-state resistance (R on) and off-state resistance (Roff) exhibited, in most cases, modest changes after irradiation. Decreases in forming voltage (Vf) and initial resistance (Rfresh) of fresh devices were observed after all irradiation experiments on VCM-ReRAM devices with the exception of Ar+ irradiation at the highest fluence (10 15 cm-2). In that case Rfresh increased by an order of magnitude. For VCM-ReRAM devices it was also observed that irradiation beyond a dose threshold of approximately 5 Grad(Si) could induce off-to-on state transition events. This behavior could lead to errors in a VCM-ReRAM memory system. ECM-ReRAM devices (based on HfO2) were also subjected to ion irradiation. Under proton irradiation ECM-ReRAM devices remained functional, but with relatively large positive variations (20-40%) in Vset, Vreset and Ron and large negative variations (˜ -60%) in Roff. In contrast to VCM HfO2-ReRAMs, ECM-based devices exhibited increased V f after irradiation, and no off-to-on transitions were observed. Interestingly, for ECM-ReRAM devices, high-fluence Ar irradiation resulted in a transition of the electrical conduction mechanism associated with the conductive filament forming process from a Poole-Frenkel conduction mechanism (pre-irradiation) to ionic conduction (post-Ar irradiation). ECM-ReRAM devices irradiated with lighter ions did not exhibit this effect. The different ion irradiation responses of the two types of HfO2-Re

  10. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    NASA Astrophysics Data System (ADS)

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-01

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105 s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  11. Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

    NASA Astrophysics Data System (ADS)

    Tanaka, Chika; Abe, Keiko; Noguchi, Hiroki; Nomura, Kumiko; Ikegami, Kazutaka; Fujita, Shinobu

    2014-01-01

    In this paper, we present a novel nonvolatile-random access memory (RAM) cell design based on a “normally-off memory architecture” using a perpendicular spin torque transfer-magnetic random access memory (STT-MRAM) based on a four-transistors static random access memory (SRAM) in order to reduce the operating power of mobile processors. After the cell design concept and basic operation are proposed, a stable and reliable operation for read/write is confirmed by circuit simulation.

  12. High performance of graphene oxide-doped silicon oxide-based resistance random access memory

    PubMed Central

    2013-01-01

    In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. PMID:24261454

  13. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

    NASA Astrophysics Data System (ADS)

    Pešić, Milan; Knebel, Steve; Geyer, Maximilian; Schmelzer, Sebastian; Böttger, Ulrich; Kolomiiets, Nadiia; Afanas'ev, Valeri V.; Cho, Kyuho; Jung, Changhwa; Chang, Jaewan; Lim, Hanjin; Mikolajick, Thomas; Schroeder, Uwe

    2016-02-01

    During dynamic random access memory (DRAM) capacitor scaling, a lot of effort was put searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO2 based DRAM capacitor stack by changing the inter-layer material from Al2O3 to SrO and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of <5 nm for the dielectric stack is in accordance with the target specifications. Detailed evaluation of the leakage current characteristics leads to a capacitor model which allows the prediction of the electrical behavior with thickness scaling.

  14. Effects of different dopants on switching behavior of HfO2-based resistive random access memory

    NASA Astrophysics Data System (ADS)

    Deng, Ning; Pang, Hua; Wu, Wei

    2014-10-01

    In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.

  15. Low latency memory access and synchronization

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E. , Vranas; Pavlos M.

    2010-10-19

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Bach processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  16. Low latency memory access and synchronization

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E.; Vranas, Pavlos M.

    2007-02-06

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Each processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  17. Remote direct memory access over datagrams

    DOEpatents

    Grant, Ryan Eric; Rashti, Mohammad Javad; Balaji, Pavan; Afsahi, Ahmad

    2014-12-02

    A communication stack for providing remote direct memory access (RDMA) over a datagram network is disclosed. The communication stack has a user level interface configured to accept datagram related input and communicate with an RDMA enabled network interface card (NIC) via an NIC driver. The communication stack also has an RDMA protocol layer configured to supply one or more data transfer primitives for the datagram related input of the user level. The communication stack further has a direct data placement (DDP) layer configured to transfer the datagram related input from a user storage to a transport layer based on the one or more data transfer primitives by way of a lower layer protocol (LLP) over the datagram network.

  18. Method and device for maximizing memory system bandwidth by accessing data in a dynamically determined order

    NASA Technical Reports Server (NTRS)

    Wulf, William A. (Inventor); McKee, Sally A. (Inventor); Klenke, Robert (Inventor); Schwab, Andrew J. (Inventor); Moyer, Stephen A. (Inventor); Aylor, James (Inventor); Hitchcock, Charles Young (Inventor)

    2000-01-01

    A data processing system is disclosed which comprises a data processor and memory control device for controlling the access of information from the memory. The memory control device includes temporary storage and decision ability for determining what order to execute the memory accesses. The compiler detects the requirements of the data processor and selects the data to stream to the memory control device which determines a memory access order. The order in which to access said information is selected based on the location of information stored in the memory. The information is repeatedly accessed from memory and stored in the temporary storage until all streamed information is accessed. The information is stored until required by the data processor. The selection of the order in which to access information maximizes bandwidth and decreases the retrieval time.

  19. Non-volatile magnetic random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

    1994-01-01

    Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

  20. Scaling Linear Algebra Kernels using Remote Memory Access

    SciTech Connect

    Krishnan, Manoj Kumar; Lewis, Robert R.; Vishnu, Abhinav

    2010-09-13

    This paper describes the scalability of linear algebra kernels based on remote memory access approach. The current approach differs from the other linear algebra algorithms by the explicit use of shared memory and remote memory access (RMA) communication rather than message passing. It is suitable for clusters and scalable shared memory systems. The experimental results on large scale systems (Linux-Infiniband cluster, Cray XT) demonstrate consistent performance advantages over ScaLAPACK suite, the leading implementation of parallel linear algebra algorithms used today. For example, on a Cray XT4 for a matrix size of 102400, our RMA-based matrix multiplication achieved over 55 teraflops while ScaLAPACK’s pdgemm measured close to 42 teraflops on 10000 processes.

  1. Performance Evaluation of Remote Memory Access (RMA) Programming on Shared Memory Parallel Computers

    NASA Technical Reports Server (NTRS)

    Jin, Hao-Qiang; Jost, Gabriele; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The purpose of this study is to evaluate the feasibility of remote memory access (RMA) programming on shared memory parallel computers. We discuss different RMA based implementations of selected CFD application benchmark kernels and compare them to corresponding message passing based codes. For the message-passing implementation we use MPI point-to-point and global communication routines. For the RMA based approach we consider two different libraries supporting this programming model. One is a shared memory parallelization library (SMPlib) developed at NASA Ames, the other is the MPI-2 extensions to the MPI Standard. We give timing comparisons for the different implementation strategies and discuss the performance.

  2. Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory

    NASA Astrophysics Data System (ADS)

    Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-06-01

    In this letter, we inserted a low dielectric constant (low-k) or high dielectric constant (high-k) material as a switching layer in indium–tin-oxide-based resistive random-access memory. After measuring the two samples, we found that the low-k material device has very low operating voltages (‑80 and 110 mV for SET and RESET operations, respectively). Current fitting results were then used with the COMSOL software package to simulate electric field distribution in the layers. After combining the electrical measurement results with simulations, a conduction model was proposed to explain resistance switching behaviors in the two structures.

  3. Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory

    NASA Astrophysics Data System (ADS)

    Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-06-01

    In this letter, we inserted a low dielectric constant (low-k) or high dielectric constant (high-k) material as a switching layer in indium-tin-oxide-based resistive random-access memory. After measuring the two samples, we found that the low-k material device has very low operating voltages (-80 and 110 mV for SET and RESET operations, respectively). Current fitting results were then used with the COMSOL software package to simulate electric field distribution in the layers. After combining the electrical measurement results with simulations, a conduction model was proposed to explain resistance switching behaviors in the two structures.

  4. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    NASA Astrophysics Data System (ADS)

    Liu, ChangLi; Wang, XueJun; Zhang, XiuLi; Du, XiaoLi; Xu, HaiSheng

    2016-05-01

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  5. a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.

    PubMed

    Jiang, Xiaofan; Ma, Zhongyuan; Xu, Jun; Chen, Kunji; Xu, Ling; Li, Wei; Huang, Xinfan; Feng, Duan

    2015-10-28

    The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I-V) curves combined with the temperature dependence of the I-V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole-Frenkel (P-F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM.

  6. a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

    PubMed Central

    Jiang, Xiaofan; Ma, Zhongyuan; Xu, Jun; Chen, Kunji; Xu, Ling; Li, Wei; Huang, Xinfan; Feng, Duan

    2015-01-01

    The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p+-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I–V ) curves combined with the temperature dependence of the I–V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole–Frenkel (P–F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM. PMID:26508086

  7. Device and Circuit Modeling and Development of a Non-Volatile Random Access Memory Cell, Utilizing AN Amorphous Silicon Thin-Film Floating-Gate Transistor Based Technology.

    NASA Astrophysics Data System (ADS)

    Riggio, Salvatore Richard, Jr.

    1994-01-01

    High density storage mechanisms are generally created using either magnetic or optical implementation techniques. Both of these techniques require mechanical transport of the medium and, therefore, have low reliability factors. These devices also generate unwanted low level ambient noise, which is of particular concern when considering modern quiet office standards. Additionally, optical techniques tend to be read-only in nature. Both mechanisms exhibit random access times that are measured in milli-seconds, rather than in micro-seconds. Therefore, the creation of a non-volatile random access memory as a replacement for the above mentioned storage techniques would be of great advantage in terms of access time, reliability, and ambient noise level. Described within are the device and circuit modeling and fabrication techniques used to develop a non-volatile random access memory cell from an amorphous silicon thin -film transistor based technology. Amorphous silicon thin-film transistors are fabricated by depositing the metal, the insulator and the semiconductor materials with a sputtering mechanism in a vacuum at 220 degrees centigrade, rather than by diffusion at 2000 degrees centigrade, as is done with crystalline silicon. By depositing a metal in the insulator, which is located between the gate and the channel, and by using an insulator material with extremely high resistivity, one can store charge in the gate region for a long period of time without external power. For example, this period of time can be as little as one week or as long as over one year. With a periodic refresh, one can extend the memory time of this storage mechanism indefinitely. Thin-film transistors can be deposited on a variety of materials such as glass, quartz or plastic by means of a stationary or continuous motion fabrication system. This material can be either rigid or flexible, and can be comparatively large in size. This allows for much greater circuit density than a standard

  8. 75 FR 44989 - In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-30

    ... December 10, 2008, based on a complaint filed by Rambus, Inc. of Los Altos, California (``Rambus''). 73 FR... COMMISSION In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory... chips having synchronous dynamic random access memory controllers and product containing the same...

  9. Direct memory access transfer completion notification

    DOEpatents

    Chen, Dong; Giampapa, Mark E.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.; Steinmacher-Burow, Burkhard D.; Vranas, Pavlos

    2010-07-27

    Methods, compute nodes, and computer program products are provided for direct memory access (`DMA`) transfer completion notification. Embodiments include determining, by an origin DMA engine on an origin compute node, whether a data descriptor for an application message to be sent to a target compute node is currently in an injection first-in-first-out (`FIFO`) buffer in dependence upon a sequence number previously associated with the data descriptor, the total number of descriptors currently in the injection FIFO buffer, and the current sequence number for the newest data descriptor stored in the injection FIFO buffer; and notifying a processor core on the origin DMA engine that the message has been sent if the data descriptor for the message is not currently in the injection FIFO buffer.

  10. Self-Testing Static Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Chau, Savio; Rennels, David

    1991-01-01

    Proposed static random-access memory for computer features improved error-detecting and -correcting capabilities. New self-testing scheme provides for detection and correction of errors at any time during normal operation - even while data being written into memory. Faults in equipment causing errors in output data detected by repeatedly testing every memory cell to determine whether it can still store both "one" and "zero", without destroying data stored in memory.

  11. 76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-07

    ... COMMISSION In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products... States after importation of certain dynamic random access memory and NAND flash memory devices and... the sale within the United States after importation of certain dynamic random access memory and...

  12. Vortex-Core Reversal Dynamics: Towards Vortex Random Access Memory

    NASA Astrophysics Data System (ADS)

    Kim, Sang-Koog

    2011-03-01

    An energy-efficient, ultrahigh-density, ultrafast, and nonvolatile solid-state universal memory is a long-held dream in the field of information-storage technology. The magnetic random access memory (MRAM) along with a spin-transfer-torque switching mechanism is a strong candidate-means of realizing that dream, given its nonvolatility, infinite endurance, and fast random access. Magnetic vortices in patterned soft magnetic dots promise ground-breaking applications in information-storage devices, owing to the very stable twofold ground states of either their upward or downward core magnetization orientation and plausible core switching by in-plane alternating magnetic fields or spin-polarized currents. However, two technologically most important but very challenging issues --- low-power recording and reliable selection of each memory cell with already existing cross-point architectures --- have not yet been resolved for the basic operations in information storage, that is, writing (recording) and readout. Here, we experimentally demonstrate a magnetic vortex random access memory (VRAM) in the basic cross-point architecture. This unique VRAM offers reliable cell selection and low-power-consumption control of switching of out-of-plane core magnetizations using specially designed rotating magnetic fields generated by two orthogonal and unipolar Gaussian-pulse currents along with optimized pulse width and time delay. Our achievement of a new device based on a new material, that is, a medium composed of patterned vortex-state disks, together with the new physics on ultrafast vortex-core switching dynamics, can stimulate further fruitful research on MRAMs that are based on vortex-state dot arrays.

  13. Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device

    NASA Astrophysics Data System (ADS)

    Sangani, L. D. Varma; Kumar, Ch. Ravi; Krishna, M. Ghanashyam

    2016-01-01

    The characteristics of an Au/Cu x O/Au bipolar resistive random-access memory device are reported. It is demonstrated that switching parameters of this device structure can be enhanced by introducing an interfacial Al layer between the Au top electrode and the Cu x O-based dielectric layer. The set and reset voltages are, respectively, between -2.5 V to -6.0 V and +1.2 V to +3.0 V for the Al-based device. In contrast, the range of values are -0.5 V to -2.5 V and +0.5 V to +1.5 V for the set and reset voltages in the absence of Al. The Al-based device has a higher low resistance state value of 5-6 KΩ as compared to the 0.3-0.5 KΩ for the Au-based device, which leads to a 12 times lower power dissipation factor and lower reset current of 370 μA. Endurance studies carried out over 50 switching cycles show less than 2% variation in both the low resistance and high resistance values. The conduction is ohmic at low values of bias and non-ohmic at higher bias voltage which shows that the enhanced behaviour is a result of the formation of an insulating aluminum oxide layer at the Al-Cu x O interface.

  14. Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

    NASA Astrophysics Data System (ADS)

    Kim, Sungjun; Park, Byung-Gook

    2016-08-01

    A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting path, the sharp reset switching, which requires a high reset power (>7 mW), was observed, whereas for a high LRS with small multiple-conducting paths, the step-by-step reset switching with a low reset power (<7 mW) was observed. The attainment of higher nonlinear current-voltage ( I-V) characteristics in terms of the step-by-step reset switching is due to the steep current-increased region of the trap-controlled space charge-limited current (SCLC) model. A multilevel cell (MLC) operation, for which the reset stop voltage ( V STOP) is used in the DC sweep mode and an incremental amplitude is used in the pulse mode for the step-by-step reset switching, is demonstrated here. The results of the present study suggest that well-controlled conducting paths in a SiN-based RRAM device, which are not too strong and not too weak, offer considerable potential for the realization of low-power and high-density crossbar-array applications.

  15. Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

    PubMed

    Kim, Sungjun; Park, Byung-Gook

    2016-12-01

    A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting path, the sharp reset switching, which requires a high reset power (>7 mW), was observed, whereas for a high LRS with small multiple-conducting paths, the step-by-step reset switching with a low reset power (<7 mW) was observed. The attainment of higher nonlinear current-voltage (I-V) characteristics in terms of the step-by-step reset switching is due to the steep current-increased region of the trap-controlled space charge-limited current (SCLC) model. A multilevel cell (MLC) operation, for which the reset stop voltage (V STOP) is used in the DC sweep mode and an incremental amplitude is used in the pulse mode for the step-by-step reset switching, is demonstrated here. The results of the present study suggest that well-controlled conducting paths in a SiN-based RRAM device, which are not too strong and not too weak, offer considerable potential for the realization of low-power and high-density crossbar-array applications. PMID:27518231

  16. BCH codes for large IC random-access memory systems

    NASA Technical Reports Server (NTRS)

    Lin, S.; Costello, D. J., Jr.

    1983-01-01

    In this report some shortened BCH codes for possible applications to large IC random-access memory systems are presented. These codes are given by their parity-check matrices. Encoding and decoding of these codes are discussed.

  17. Radiation Effects of Commercial Resistive Random Access Memories

    NASA Technical Reports Server (NTRS)

    Chen, Dakai; LaBel, Kenneth A.; Berg, Melanie; Wilcox, Edward; Kim, Hak; Phan, Anthony; Figueiredo, Marco; Buchner, Stephen; Khachatrian, Ani; Roche, Nicolas

    2014-01-01

    We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

  18. Memory for Recently Accessed Visual Attributes

    ERIC Educational Resources Information Center

    Jiang, Yuhong V.; Shupe, Joshua M.; Swallow, Khena M.; Tan, Deborah H.

    2016-01-01

    Recent reports have suggested that the attended features of an item may be rapidly forgotten once they are no longer relevant for an ongoing task (attribute amnesia). This finding relies on a surprise memory procedure that places high demands on declarative memory. We used intertrial priming to examine whether the representation of an item's…

  19. The Dynamics of Access to Groups in Working Memory

    ERIC Educational Resources Information Center

    Farrell, Simon; Lelievre, Anna

    2012-01-01

    The finding that participants leave a pause between groups when attempting serial recall of temporally grouped lists has been taken to indicate access to a hierarchical representation of the list in working memory. An alternative explanation is that the dynamics of serial recall solely reflect output (rather than memorial) processes, with the…

  20. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  1. Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory.

    PubMed

    Zheng, Jianping; Cheng, Baochang; Wu, Fuzhang; Su, Xiaohui; Xiao, Yanhe; Guo, Rui; Lei, Shuijin

    2014-12-10

    Bipolar resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory (RRAM). Here, two-terminal devices based on individual PbS micro/nanowires with Ag electrodes are constructed, whose electrical transport depends strongly on the abundant surface and bulk trap states in micro/nanostructures. The surface trap states can be filled/emptied effectively at negative/positive bias voltage, respectively, and the corresponding rise/fall of the Fermi level induces a variation in a degenerate/nondegenerate state, resulting in low/high resistance. Moreover, the filling/emptying of trap states can be utilized as RRAM. After annealing, the surface trap state can almost be eliminated completely; while most of the bulk trap states can still remain. In the devices unannealed and annealed at both ends, therefore, the symmetrical back-to-back Fowler-Nordheim tunneling with large ON/OFF resistance ratio and Poole-Frenkel emission with poor hysteresis can be observed under cyclic sweep voltage, respectively. However, a typical bipolar RS behavior can be observed effectively in the devices annealed at one end. The acquirement of bipolar RS and nonvolatile RRAM by the modulation of electrode annealing demonstrates the abundant trap states in micro/nanomaterials will be advantageous to the development of new type electronic components.

  2. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  3. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  4. Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory.

    PubMed

    Nho, Hyun Woo; Kim, Jong Yun; Wang, Jian; Shin, Hyun-Joon; Choi, Sung-Yool; Yoon, Tae Hyun

    2014-01-01

    Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K- and O K-edges, both the RRAM junctions and the I0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.

  5. Direct access inter-process shared memory

    SciTech Connect

    Brightwell, Ronald B; Pedretti, Kevin; Hudson, Trammell B

    2013-10-22

    A technique for directly sharing physical memory between processes executing on processor cores is described. The technique includes loading a plurality of processes into the physical memory for execution on a corresponding plurality of processor cores sharing the physical memory. An address space is mapped to each of the processes by populating a first entry in a top level virtual address table for each of the processes. The address space of each of the processes is cross-mapped into each of the processes by populating one or more subsequent entries of the top level virtual address table with the first entry in the top level virtual address table from other processes.

  6. Memory for recently accessed visual attributes.

    PubMed

    Jiang, Yuhong V; Shupe, Joshua M; Swallow, Khena M; Tan, Deborah H

    2016-08-01

    Recent reports have suggested that the attended features of an item may be rapidly forgotten once they are no longer relevant for an ongoing task (attribute amnesia). This finding relies on a surprise memory procedure that places high demands on declarative memory. We used intertrial priming to examine whether the representation of an item's identity is lost completely once it becomes task irrelevant. If so, then the identity of a target on one trial should not influence performance on the next trial. In 3 experiments, we replicated the finding that a target's identity is poorly recognized in a surprise memory test. However, we also observed location and identity repetition priming across consecutive trials. These data suggest that, although explicit recognition on a surprise memory test may be impaired, some information about a particular target's identity can be retained after it is no longer needed for a task. (PsycINFO Database Record

  7. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  8. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    SciTech Connect

    Di Pendina, G. E-mail: eldar.zianbetov@cea.fr Zianbetov, E. E-mail: eldar.zianbetov@cea.fr; Beigne, E. E-mail: eldar.zianbetov@cea.fr

    2015-05-07

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  9. Vertically Integrated Nanowire-Based Unified Memory.

    PubMed

    Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu

    2016-09-14

    A vertically integrated nanowire-based device for multifunctional unified memory that combine dynamic random access memory (DRAM) and flash memory in a single transistor is demonstrated for the first time. The device utilizes a gate-all-around (GAA) structure that completely surrounds the nanowire; the structure is built on a bulk silicon wafer. A vertically integrated unified memory (VIUM) device composed of five-story channels was fabricated via the one-route all-dry etching process (ORADEP) with reliable reproducibility, stiction-free stability, and high uniformity. In each DRAM and flash memory operation, the five-story VIUM showed a remarkably enhanced sensing current drivability compared with one-story unified memory (UM) characteristics. In addition to each independent memory mode, the switching endurance of the VIUM was evaluated in the unified mode, which alternatively activates two memory modes, resulting in an even higher sensing memory window than that of the UM. In addition to our previous work on a logic transistor joining high performance with good scalability, this work describes a novel memory hierarchy design with high functionality for system-on-chip (SoC) architectures, demonstrating the practicality and versatility of the vertically integrated nanowire configuration for use in various applications.

  10. Vertically Integrated Nanowire-Based Unified Memory.

    PubMed

    Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu

    2016-09-14

    A vertically integrated nanowire-based device for multifunctional unified memory that combine dynamic random access memory (DRAM) and flash memory in a single transistor is demonstrated for the first time. The device utilizes a gate-all-around (GAA) structure that completely surrounds the nanowire; the structure is built on a bulk silicon wafer. A vertically integrated unified memory (VIUM) device composed of five-story channels was fabricated via the one-route all-dry etching process (ORADEP) with reliable reproducibility, stiction-free stability, and high uniformity. In each DRAM and flash memory operation, the five-story VIUM showed a remarkably enhanced sensing current drivability compared with one-story unified memory (UM) characteristics. In addition to each independent memory mode, the switching endurance of the VIUM was evaluated in the unified mode, which alternatively activates two memory modes, resulting in an even higher sensing memory window than that of the UM. In addition to our previous work on a logic transistor joining high performance with good scalability, this work describes a novel memory hierarchy design with high functionality for system-on-chip (SoC) architectures, demonstrating the practicality and versatility of the vertically integrated nanowire configuration for use in various applications. PMID:27579769

  11. A Cerebellar-model Associative Memory as a Generalized Random-access Memory

    NASA Technical Reports Server (NTRS)

    Kanerva, Pentti

    1989-01-01

    A versatile neural-net model is explained in terms familiar to computer scientists and engineers. It is called the sparse distributed memory, and it is a random-access memory for very long words (for patterns with thousands of bits). Its potential utility is the result of several factors: (1) a large pattern representing an object or a scene or a moment can encode a large amount of information about what it represents; (2) this information can serve as an address to the memory, and it can also serve as data; (3) the memory is noise tolerant--the information need not be exact; (4) the memory can be made arbitrarily large and hence an arbitrary amount of information can be stored in it; and (5) the architecture is inherently parallel, allowing large memories to be fast. Such memories can become important components of future computers.

  12. Memory-Based Approaches and Beyond

    ERIC Educational Resources Information Center

    Sanford, Anthony J.; Garrod, Simon C.

    2005-01-01

    In this article, we discuss 2 issues that we believe any theory of discourse comprehension has to take account of-accessing irrelevant information and granularity. Along the lines that have been suggested as demonstrating the memory-based account, we describe some work in favor of the recruitment of apparently irrelevant information from memory…

  13. Direct memory access transfer completion notification

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.; Parker, Jeffrey J.

    2011-02-15

    DMA transfer completion notification includes: inserting, by an origin DMA engine on an origin node in an injection first-in-first-out (`FIFO`) buffer, a data descriptor for an application message to be transferred to a target node on behalf of an application on the origin node; inserting, by the origin DMA engine, a completion notification descriptor in the injection FIFO buffer after the data descriptor for the message, the completion notification descriptor specifying a packet header for a completion notification packet; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; sending, by the origin DMA engine, the completion notification packet to a local reception FIFO buffer using a local memory FIFO transfer operation; and notifying, by the origin DMA engine, the application that transfer of the message is complete in response to receiving the completion notification packet in the local reception FIFO buffer.

  14. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Wang, Chundong; Zhou, Li; Yan, Yan; Zhuang, Jiaqing; Sun, Qijun; Zhang, Hua; Roy, V A L

    2016-01-20

    Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics.

  15. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Wang, Chundong; Zhou, Li; Yan, Yan; Zhuang, Jiaqing; Sun, Qijun; Zhang, Hua; Roy, V A L

    2016-01-20

    Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics. PMID:26578160

  16. Access ordering and coherence in shared-memory multi-processors

    SciTech Connect

    Scheurich, C.E.

    1989-01-01

    Shared memory forms a convenient communication medium in a multitasking multiprocessor system. However, different multiprocessors can execute the same program in different manners, possibly yielding incorrect results because the machines adhere to different rules. Differences in behavior are due to the varying approaches of designers to attack the shared memory access latency problem in multiprocessors. In particular, the manner in which multiple copies of data are controlled and the manner in which memory accesses are sequenced, propagated, and buffered has impact on the behavior of the multiprocessor. Three shared memory execution models, referred to as concurrency models, are defined. The precise properties of processors, memories, and interconnection networks are derived to comply to each of the concurrency models. The usefulness of these concurrency models is demonstrated by showing the simplicity with which their rules can be applied to allow buffering of memory accesses, implement combining networks, prove cache coherence protocols correct, and design lockup-free caches. Specific examples are provided, both of a cache-based multiprocessor potentially without bottlenecks and of a cache-based multiprocessor employing lockup-free caches which can continue to service the processor while concurrently servicing one of several access misses. The paradigms and associated conditions presented in this thesis form a set of powerful tools allowing multiprocessor designers to concentrate on functionality while being burdened less with side-effect analysis.

  17. Quantifying Locality in the Memory Access Patterns of HPCApplications

    SciTech Connect

    Weinberg, Jonathan; Snavely, Allan; McCracken, Michael O.; Strohmaier, Erich

    2005-07-25

    Several benchmarks for measuring memory performance of HPC systems along dimensions of spatial and temporal memory locality have recently been proposed. However, little is understood about the relationships of these benchmarks to real applications and to each other. In this paper, we propose a methodology for producing architecture-neutral characterizations of the spatial and temporal locality exhibited by the memory access patterns of applications. We demonstrate that the results track intuitive notions of spatial and temporal locality on several synthetic and application benchmarks. We employ the methodology to analyze the memory performance components of the HPC Challenge Benchmarks, the Apex-MAP benchmark, and their relationships to each other and other benchmarks and applications. We show that this analysis can be used to both increase understanding of the benchmarks and enhance their usefulness by mapping them, along with applications, to a 2-D space along axes of spatial and temporal locality.

  18. Memory-based parallel data output controller

    NASA Technical Reports Server (NTRS)

    Stattel, R. J.; Niswander, J. K. (Inventor)

    1984-01-01

    A memory-based parallel data output controller employs associative memories and memory mapping to decommutate multiple channels of telemetry data. The output controller contains a random access memory (RAM) which has at least as many address locations as there are channels. A word counter addresses the RAM which provides as it outputs an encoded peripheral device number and a MSB/LSB-first flag. The encoded device number and a bit counter address a second RAM which contains START and STOP flags to pick out the required bits from the specified word number. The LSB/MSB, START and STOP flags, along with the serial input digital data go to a control block which selectively fills a shift register used to drive the parallel data output bus.

  19. Optical interconnection network for parallel access to multi-rank memory in future computing systems.

    PubMed

    Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

    2015-08-10

    With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent.

  20. Optical interconnection network for parallel access to multi-rank memory in future computing systems.

    PubMed

    Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

    2015-08-10

    With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent. PMID:26367901

  1. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    SciTech Connect

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diverse manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.

  2. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    DOE PAGES

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diversemore » manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.« less

  3. Integrated, nonvolatile, high-speed analog random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor)

    1994-01-01

    This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

  4. Magnet/Hall-Effect Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

  5. Paging memory from random access memory to backing storage in a parallel computer

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

    2013-05-21

    Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

  6. 75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-25

    ... COMMISSION In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of Investigation AGENCY: U.S. International Trade Commission. ACTION... random access memory semiconductors and products containing same, including memory modules, by reason...

  7. 76 FR 73676 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-29

    ... COMMISSION Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint... complaint entitled In Re Certain Dynamic Random Access Memory Devices, and Products Containing Same, DN 2859... within the United States after importation of certain dynamic random access memory devices, and...

  8. 76 FR 80964 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-27

    ... COMMISSION Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of... States after importation of certain dynamic random access memory devices, and products containing same by... dynamic random access memory devices, and products containing same that infringe one or more of claims...

  9. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  10. A current access, self-structured, multilayered bubble domain memory

    NASA Technical Reports Server (NTRS)

    Stermer, R. L., Jr.; Kamin, M.; Tolman, C. H.; Torok, E. J.

    1980-01-01

    Preliminary experimental results are reported on a self-structured, multilayer bubble memory with buried data layer. Stripe domains are used to move carrier bubbles by magnetostatic coupling. An expression is derived for that coupling as a function of thickness of the GGG separation layer. Experimental values of coupling are given as a function of bias field. An expression for stripe curvature as a function of bias field is derived. The performance of seven different current access stripe propagation circuits is reported.

  11. Nonvolatile GaAs Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Stadler, Henry L.; Wu, Jiin-Chuan

    1994-01-01

    Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

  12. If memory serves, will language? Later verbal accessibility of early memories.

    PubMed

    Bauer, P J; Kroupina, M G; Schwade, J A; Dropik, P L; Wewerka, S S

    1998-01-01

    Of major interest to those concerned with early mnemonic process and function is the question of whether early memories likely encoded without the benefit of language later are accessible to verbal report. In the context of a controlled laboratory study, we examined this question in children who were 16 and 20 months at the time of exposure to specific target events and who subsequently were tested for their memories of the events after a delay of either 6 or 12 months (at 22-32 months) and then again at 3 years. At the first delayed-recall test, children evidenced memory both nonverbally and verbally. Nonverbal mnemonic expression was related to age at the time of test; verbal mnemonic expression was related to verbal fluency at the time of test. At the second delayed-recall test, children evidenced continued accessibility of their early memories. Verbal mnemonic expression was related to previous mnemonic expression, both nonverbal and verbal, each of which contributed unique variance. The relevance of these findings on memory for controlled laboratory events for issues of memory for traumatic experiences is discussed. PMID:9886220

  13. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    SciTech Connect

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P.

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  14. Memory-intensive benchmarks: IRAM vs. cache-based machines

    SciTech Connect

    Gaeke, Brian G.; Husbands, Parry; Kim, Hyun Jin; Li, Xiaoye S.; Moon, Hyun Jin; Oliker, Leonid; Yelick, Katherine A.; Biswas, Rupak

    2001-09-29

    The increasing gap between processor and memory performance has led to new architectural models for memory-intensive applications. In this paper, we explore the performance of a set of memory-intensive benchmarks and use them to compare the performance of conventional cache-based microprocessors to a mixed logic and DRAM processor called VIRAM. The benchmarks are based on problem statements, rather than specific implementations, and in each case we explore the fundamental hardware requirements of the problem, as well as alternative algorithms and data structures that can help expose fine-grained parallelism or simplify memory access patterns. The benchmarks are characterized by their memory access patterns, their basic structures, and the ratio of computation to memory operation.

  15. Memory-Intensive Benchmarks: IRAM vs. Cache-Based Machines

    NASA Technical Reports Server (NTRS)

    Biswas, Rupak; Gaeke, Brian R.; Husbands, Parry; Li, Xiaoye S.; Oliker, Leonid; Yelick, Katherine A.; Biegel, Bryan (Technical Monitor)

    2002-01-01

    The increasing gap between processor and memory performance has lead to new architectural models for memory-intensive applications. In this paper, we explore the performance of a set of memory-intensive benchmarks and use them to compare the performance of conventional cache-based microprocessors to a mixed logic and DRAM processor called VIRAM. The benchmarks are based on problem statements, rather than specific implementations, and in each case we explore the fundamental hardware requirements of the problem, as well as alternative algorithms and data structures that can help expose fine-grained parallelism or simplify memory access patterns. The benchmarks are characterized by their memory access patterns, their basic control structures, and the ratio of computation to memory operation.

  16. Memory hierarchy using row-based compression

    DOEpatents

    Loh, Gabriel H.; O'Connor, James M.

    2016-10-25

    A system includes a first memory and a device coupleable to the first memory. The device includes a second memory to cache data from the first memory. The second memory includes a plurality of rows, each row including a corresponding set of compressed data blocks of non-uniform sizes and a corresponding set of tag blocks. Each tag block represents a corresponding compressed data block of the row. The device further includes decompression logic to decompress data blocks accessed from the second memory. The device further includes compression logic to compress data blocks to be stored in the second memory.

  17. Memory Benchmarks for SMP-Based High Performance Parallel Computers

    SciTech Connect

    Yoo, A B; de Supinski, B; Mueller, F; Mckee, S A

    2001-11-20

    As the speed gap between CPU and main memory continues to grow, memory accesses increasingly dominates the performance of many applications. The problem is particularly acute for symmetric multiprocessor (SMP) systems, where the shared memory may be accessed concurrently by a group of threads running on separate CPUs. Unfortunately, several key issues governing memory system performance in current systems are not well understood. Complex interactions between the levels of the memory hierarchy, buses or switches, DRAM back-ends, system software, and application access patterns can make it difficult to pinpoint bottlenecks and determine appropriate optimizations, and the situation is even more complex for SMP systems. To partially address this problem, we formulated a set of multi-threaded microbenchmarks for characterizing and measuring the performance of the underlying memory system in SMP-based high-performance computers. We report our use of these microbenchmarks on two important SMP-based machines. This paper has four primary contributions. First, we introduce a microbenchmark suite to systematically assess and compare the performance of different levels in SMP memory hierarchies. Second, we present a new tool based on hardware performance monitors to determine a wide array of memory system characteristics, such as cache sizes, quickly and easily; by using this tool, memory performance studies can be targeted to the full spectrum of performance regimes with many fewer data points than is otherwise required. Third, we present experimental results indicating that the performance of applications with large memory footprints remains largely constrained by memory. Fourth, we demonstrate that thread-level parallelism further degrades memory performance, even for the latest SMPs with hardware prefetching and switch-based memory interconnects.

  18. Complex dynamics of semantic memory access in reading.

    PubMed

    Baggio, Giosué; Fonseca, André

    2012-02-01

    Understanding a word in context relies on a cascade of perceptual and conceptual processes, starting with modality-specific input decoding, and leading to the unification of the word's meaning into a discourse model. One critical cognitive event, turning a sensory stimulus into a meaningful linguistic sign, is the access of a semantic representation from memory. Little is known about the changes that activating a word's meaning brings about in cortical dynamics. We recorded the electroencephalogram (EEG) while participants read sentences that could contain a contextually unexpected word, such as 'cold' in 'In July it is very cold outside'. We reconstructed trajectories in phase space from single-trial EEG time series, and we applied three nonlinear measures of predictability and complexity to each side of the semantic access boundary, estimated as the onset time of the N400 effect evoked by critical words. Relative to controls, unexpected words were associated with larger prediction errors preceding the onset of the N400. Accessing the meaning of such words produced a phase transition to lower entropy states, in which cortical processing becomes more predictable and more regular. Our study sheds new light on the dynamics of information flow through interfaces between sensory and memory systems during language processing.

  19. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A; Miller, Douglas R

    2014-03-18

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  20. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A; Miller, Douglas R

    2012-10-23

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  1. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A.; Miller, Douglas R.

    2013-01-01

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  2. Efficient Memory Access with NumPy Global Arrays using Local Memory Access

    SciTech Connect

    Daily, Jeffrey A.; Berghofer, Dan C.

    2013-08-03

    This paper discusses the work completed working with Global Arrays of data on distributed multi-computer systems and improving their performance. The tasks completed were done at Pacific Northwest National Laboratory in the Science Undergrad Laboratory Internship program in the summer of 2013 for the Data Intensive Computing Group in the Fundamental and Computational Sciences DIrectorate. This work was done on the Global Arrays Toolkit developed by this group. This toolkit is an interface for programmers to more easily create arrays of data on networks of computers. This is useful because scientific computation is often done on large amounts of data sometimes so large that individual computers cannot hold all of it. This data is held in array form and can best be processed on supercomputers which often consist of a network of individual computers doing their computation in parallel. One major challenge for this sort of programming is that operations on arrays on multiple computers is very complex and an interface is needed so that these arrays seem like they are on a single computer. This is what global arrays does. The work done here is to use more efficient operations on that data that requires less copying of data to be completed. This saves a lot of time because copying data on many different computers is time intensive. The way this challenge was solved is when data to be operated on with binary operations are on the same computer, they are not copied when they are accessed. When they are on separate computers, only one set is copied when accessed. This saves time because of less copying done although more data access operations were done.

  3. Cell memory-based therapy.

    PubMed

    Anjamrooz, Seyed Hadi

    2015-11-01

    Current cell therapies, despite all of the progress in this field, still faces major ethical, technical and regulatory hurdles. Because these issues possibly stem from the current, restricted, stereotypical view of cell ultrastructure and function, we must think radically about the nature of the cell. In this regard, the author's theory of the cell memory disc offers 'memory-based therapy', which, with the help of immune system rejuvenation, nervous system control and microparticle-based biodrugs, may have substantial therapeutic potential. In addition to its potential value in the study and prevention of premature cell aging, age-related diseases and cell death, memory therapy may improve the treatment of diseases that are currently limited by genetic disorders, risk of tumour formation and the availability and immunocompatibility of tissue transplants. PMID:26256679

  4. Cell memory-based therapy

    PubMed Central

    Anjamrooz, Seyed Hadi

    2015-01-01

    Current cell therapies, despite all of the progress in this field, still faces major ethical, technical and regulatory hurdles. Because these issues possibly stem from the current, restricted, stereotypical view of cell ultrastructure and function, we must think radically about the nature of the cell. In this regard, the author's theory of the cell memory disc offers ‘memory-based therapy’, which, with the help of immune system rejuvenation, nervous system control and microparticle-based biodrugs, may have substantial therapeutic potential. In addition to its potential value in the study and prevention of premature cell aging, age-related diseases and cell death, memory therapy may improve the treatment of diseases that are currently limited by genetic disorders, risk of tumour formation and the availability and immunocompatibility of tissue transplants. PMID:26256679

  5. Optical Shared Memory Computing and Multiple Access Protocols for Photonic Networks

    NASA Astrophysics Data System (ADS)

    Li, Kuang-Yu.

    In this research we investigate potential applications of optics in massively parallel computer systems, especially focusing on design issues in three-dimensional optical data storage and free-space photonic networks. An optical implementation of a shared memory uses a single photorefractive crystal and can realize the set of memory modules in a digital shared memory computer. A complete instruction set consists of R sc EAD, W sc RITE, S sc ELECTIVE E sc RASE, and R sc EFRESH, which can be applied to any memory module independent of (and in parallel with) instructions to the other memory modules. In addition, a memory module can execute a sequence of R sc EAD operations simultaneously with the execution of a W sc RITE operation to accommodate differences in optical recording and readout times common to optical volume storage media. An experimental shared memory system is demonstrated and its projected performance is analyzed. A multiplexing technique is presented to significantly reduce both grating- and beam-degeneracy crosstalk in volume holographic systems, by incorporating space, angle, and wavelength as the multiplexing parameters. In this approach, each hologram, which results from the interference between a single input node and an object array, partially overlaps with the other holograms in its neighborhood. This technique can offer improved interconnection density, optical throughput, signal fidelity, and space-bandwidth product utilization. Design principles and numerical simulation results are presented. A free-space photonic cellular hypercube parallel computer, with emphasis on the design of a collisionless multiple access protocol, is presented. This design incorporates wavelength-, space-, and time-multiplexing to achieve multiple access, wavelength reuse, dense connectivity, collisionless communications, and a simple control mechanism. Analytic models based on semi-Markov processes are employed to analyze this protocol. The performance of the

  6. Spin-Hall-assisted magnetic random access memory

    SciTech Connect

    Brink, A. van den Swagten, H. J. M.; Koopmans, B.; Cosemans, S.; Manfrini, M.; Van Roy, W.; Min, T.; Cornelissen, S.; Vaysset, A.

    2014-01-06

    We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.

  7. Complementary resistive switching behavior for conductive bridge random access memory

    NASA Astrophysics Data System (ADS)

    Zheng, Hao-Xuan; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Zhang, Rui; Chen, Kai-Huang; Wang, Ming-Hui; Zheng, Jin-Cheng; Lo, Ikai; Wu, Cheng-Hsien; Tseng, Yi-Ting; Sze, Simon M.

    2016-06-01

    In this study, a structure of Pt/Cu18Si12O70/TiN has been investigated. By co-sputtering the Cu and SiO2 targets in the switching layer, we can measure the operation mechanism of complementary resistive switching (CRS). This differs from conventional conductive bridge random access memory (CBRAM) that tends to use Cu electrodes rather than Cu18Si12O70. By changing the voltage and compliance current, we can control device operating characteristics. Because Cu distributes differently in the device depending on this setting, the operating end can be located at either the top or bottom electrode. Device current-voltage (I-V) curves are used to demonstrate that the CRS in the CBRAM device is a double-electrode operation.

  8. Non-volatile memory based on the ferroelectric photovoltaic effect

    PubMed Central

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  9. Non-volatile memory based on the ferroelectric photovoltaic effect

    NASA Astrophysics Data System (ADS)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-06-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique.

  10. Taxing Working Memory during Retrieval of Emotional Memories Does Not Reduce Memory Accessibility When Cued with Reminders

    PubMed Central

    van Schie, Kevin; Engelhard, Iris M.; van den Hout, Marcel A.

    2015-01-01

    Earlier studies have shown that when individuals recall an emotional memory while simultaneously doing a demanding dual-task [e.g., playing Tetris, mental arithmetic, making eye movements (EM)], this reduces self-reported vividness and emotionality of the memory. These effects have been found up to 1 week later, but have largely been confined to self-report ratings. This study examined whether this dual-tasking intervention reduces memory performance (i.e., accessibility of emotional memories). Undergraduates (N = 60) studied word-image pairs and rated the retrieved image on vividness and emotionality when cued with the word. Then they viewed the cues and recalled the images with or without making EM. Finally, they re-rated the images on vividness and emotionality. Additionally, fragments from images from all conditions were presented and participants identified which fragment was paired earlier with which cue. Findings showed no effect of the dual-task manipulation on self-reported ratings and latency responses. Several possible explanations for the lack of effects are discussed, but the cued recall procedure in our experiment seems to explain the absence of effects best. The study demonstrates boundaries to the effects of the “dual-tasking” procedure. PMID:25729370

  11. 78 FR 25767 - Certain Static Random Access Memories and Products Containing Same; Commission Determination To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-02

    ..., California (``Cypress''). 76 FR 45295 (July 28, 2011). The complaint alleged violations of section 337 of the... COMMISSION Certain Static Random Access Memories and Products Containing Same; Commission Determination To..., and the sale within the United States after importation of certain static random access memories...

  12. Accessibility versus Accuracy in Retrieving Spatial Memory: Evidence for Suboptimal Assumed Headings

    ERIC Educational Resources Information Center

    Yerramsetti, Ashok; Marchette, Steven A.; Shelton, Amy L.

    2013-01-01

    Orientation dependence in spatial memory has often been interpreted in terms of accessibility: Object locations are encoded relative to a reference orientation that affords the most accurate access to spatial memory. An open question, however, is whether people naturally use this "preferred" orientation whenever recalling the space. We…

  13. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems.

    PubMed

    Shehzad, Danish; Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models. PMID:27413363

  14. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems

    PubMed Central

    Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models. PMID:27413363

  15. Computer vector multiprocessing control with multiple access memory and priority conflict resolution method

    SciTech Connect

    Chen, S.S.; Schiffleger, A.J.

    1990-02-13

    This patent describes a multiprocessor memory system. It comprises: a central memory comprised of a plurality of independently addressable memory banks organized into a plurality of sections each accessible through a plurality of access paths; a plurality of processing machines; each of the processing machine including a plurality of ports for generating memory references to any one of the central memory sections; and conflict resolution means interfacing each of the ports to each of the central memory sections through the central memory access paths. The resolution means for receiving references from the ports and coordinating and controlling the procession of the references along to the access paths. The conflict resolution means comprising a plurality of conflict resolution circuits corresponding in number to the memory sections, each of the circuits receiving the references to its corresponding section from any one of the ports and selectively conveying the references to the access paths for the corresponding section. The circuits each including; means for checking the readiness of the memory banks to be referenced and holding a reference to a busy one of the banks until the bank is ready to be referenced; means for detecting when more than one of the references is pending to the same bank simultaneously and holding all but one of the simultaneously pending references; and means communicating with the ports and the other of the conflict resolution circuits to cause one of the ports referencing the memory to suspend generation of further references when a reference from the referencing port is being held.

  16. Working memory capacity and retrieval limitations from long-term memory: an examination of differences in accessibility.

    PubMed

    Unsworth, Nash; Spillers, Gregory J; Brewer, Gene A

    2012-01-01

    In two experiments, the locus of individual differences in working memory capacity and long-term memory recall was examined. Participants performed categorical cued and free recall tasks, and individual differences in the dynamics of recall were interpreted in terms of a hierarchical-search framework. The results from this study are in accordance with recent theorizing suggesting a strong relation between working memory capacity and retrieval from long-term memory. Furthermore, the results also indicate that individual differences in categorical recall are partially due to differences in accessibility. In terms of accessibility of target information, two important factors drive the difference between high- and low-working-memory-capacity participants. Low-working-memory-capacity participants fail to utilize appropriate retrieval strategies to access cues, and they also have difficulty resolving cue overload. Thus, when low-working-memory-capacity participants were given specific cues that activated a smaller set of potential targets, their recall performance was the same as that of high-working-memory-capacity participants. PMID:22800472

  17. Comprehension of Linguistic Dependencies: Speed-Accuracy Tradeoff Evidence for Direct-Access Retrieval From Memory

    PubMed Central

    Foraker, Stephani; McElree, Brian

    2012-01-01

    Comprehenders can rapidly and efficiently interpret expressions with various types of non-adjacent dependencies. In the sentence The boy that the teacher warned fell, boy is readily interpreted as the subject of the verb fall despite the fact that a relative clause, that the teacher warned, intervenes between the two dependent elements. We review research investigating three memory operations proposed for resolving this and other types of non-adjacent dependencies: serial search retrieval, in which the dependent constituent is recovered by a search process through representations in memory, direct-access retrieval in which the dependent constituent is recovered directly by retrieval cue operations without search, and active maintenance of the dependent constituent in focal attention. Studies using speed-accuracy tradeoff methodology to examine the full timecourse of interpreting a wide range of non-adjacent dependencies indicate that comprehenders retrieve dependent constituents with a direct-access operation, consistent with the claim that representations formed during comprehension are accessed with a cue-driven, content-addressable retrieval process. The observed timecourse profiles are inconsistent with a broad class of models based on several search operations for retrieval. The profiles are also inconsistent with active maintenance of a constituent while concurrently processing subsequent material, and suggest that, with few exceptions, direct-access retrieval is required to process non-adjacent dependencies. PMID:22448181

  18. Mapping virtual addresses to different physical addresses for value disambiguation for thread memory access requests

    DOEpatents

    Gala, Alan; Ohmacht, Martin

    2014-09-02

    A multiprocessor system includes nodes. Each node includes a data path that includes a core, a TLB, and a first level cache implementing disambiguation. The system also includes at least one second level cache and a main memory. For thread memory access requests, the core uses an address associated with an instruction format of the core. The first level cache uses an address format related to the size of the main memory plus an offset corresponding to hardware thread meta data. The second level cache uses a physical main memory address plus software thread meta data to store the memory access request. The second level cache accesses the main memory using the physical address with neither the offset nor the thread meta data after resolving speculation. In short, this system includes mapping of a virtual address to a different physical addresses for value disambiguation for different threads.

  19. Multiple core computer processor with globally-accessible local memories

    DOEpatents

    Shalf, John; Donofrio, David; Oliker, Leonid

    2016-09-20

    A multi-core computer processor including a plurality of processor cores interconnected in a Network-on-Chip (NoC) architecture, a plurality of caches, each of the plurality of caches being associated with one and only one of the plurality of processor cores, and a plurality of memories, each of the plurality of memories being associated with a different set of at least one of the plurality of processor cores and each of the plurality of memories being configured to be visible in a global memory address space such that the plurality of memories are visible to two or more of the plurality of processor cores.

  20. 76 FR 45295 - In the Matter of Certain Static Random Access Memories and Products Containing Same; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-28

    ... COMMISSION In the Matter of Certain Static Random Access Memories and Products Containing Same; Notice of... importation, and the sale within the United States after importation of certain static random access memories... importation of certain static random access memories and products containing same that infringe one or more...

  1. Program partitioning for NUMA multiprocessor computer systems. [Nonuniform memory access

    SciTech Connect

    Wolski, R.M.; Feo, J.T. )

    1993-11-01

    Program partitioning and scheduling are essential steps in programming non-shared-memory computer systems. Partitioning is the separation of program operations into sequential tasks, and scheduling is the assignment of tasks to processors. To be effective, automatic methods require an accurate representation of the model of computation and the target architecture. Current partitioning methods assume today's most prevalent models -- macro dataflow and a homogeneous/two-level multicomputer system. Based on communication channels, neither model represents well the emerging class of NUMA multiprocessor computer systems consisting of hierarchical read/write memories. Consequently, the partitions generated by extant methods do not execute well on these systems. In this paper, the authors extend the conventional graph representation of the macro-dataflow model to enable mapping heuristics to consider the complex communication options supported by NUMA architectures. They describe two such heuristics. Simulated execution times of program graphs show that the model and heuristics generate higher quality program mappings than current methods for NUMA architectures.

  2. Adult Age Differences in Accessing and Retrieving Information from Long-Term Memory.

    ERIC Educational Resources Information Center

    Petros, Thomas V.; And Others

    1983-01-01

    Investigated adult age differences in accessing and retrieving information from long-term memory. Results showed that older adults (N=26) were slower than younger adults (N=35) at feature extraction, lexical access, and accessing category information. The age deficit was proportionally greater when retrieval of category information was required.…

  3. Optimization of Pit Depth for Concurrent Read Only Memory-Random Access Memory Optical Disk

    NASA Astrophysics Data System (ADS)

    Aoyama, Nobuhide; Yamashita, Satoshi; Kunimatsu, Yasukiyo; Hosokawa, Tetsuo; Morimoto, Yasuaki; Suenaga, Masashi; Yoshihiro, Masafumi; Shimazaki, Katsusuke

    2004-06-01

    We have studied a concurrent read only memory-random access memory (ROM-RAM) optical disk system without laser feedback by optimizing pit depth. When the pit depth was 47 nm (optical depth about 1/11 λ) and the pit width 0.45 μm, about 8% jitter in both pit and magneto-optical (MO) signals was obtained with a 785 nm wavelength laser diode and 0.55 NA objective lens by employing magnetic-field-modulation (MFM) MO recording. Both pit data and MO data were recorded with eight to fourteen modulation (EFM) code with a minimum mark length of 0.83 μm and a track pitch of 1.6 μm and thus the areal density is comparable to 1.3 GB for φ 120 mm single sided disk. By the optimization of the pit depth, sufficient system margins for practical use were obtained without laser feed back for the simultaneous reproduction of both pit and MO signals.

  4. Predicting fluctuations in widespread interest: memory decay and goal-related memory accessibility in internet search trends.

    PubMed

    Masicampo, E J; Ambady, Nalini

    2014-02-01

    Memory and interest respond in similar ways to people's shifting needs and motivations. We therefore tested whether memory and interest might produce similar, observable patterns in people's responses over time. Specifically, the present studies examined whether fluctuations in widespread interest (as measured by Internet search trends) resemble two well-established memory patterns: memory decay and goal-related memory accessibility. We examined national and international events (e.g., Nobel Prize selections, holidays) that produced spikes in widespread interest in certain people and foods. When the events that triggered widespread interest were incidental (e.g., the death of a celebrity), widespread interest conformed to memory decay patterns: It rose quickly, fell slowly according to a power function, and was higher after the event than before it. When the events that triggered widespread interest were goal related (e.g., political elections), widespread interest conformed to patterns of goal-related memory accessibility: It rose slowly, fell quickly according to a sigmoid function, and was lower after the event than before it. Fluctuations in widespread interest over time are thus similar to standard memory patterns observed at the individual level due perhaps to common mechanisms and functions.

  5. Predicting fluctuations in widespread interest: memory decay and goal-related memory accessibility in internet search trends.

    PubMed

    Masicampo, E J; Ambady, Nalini

    2014-02-01

    Memory and interest respond in similar ways to people's shifting needs and motivations. We therefore tested whether memory and interest might produce similar, observable patterns in people's responses over time. Specifically, the present studies examined whether fluctuations in widespread interest (as measured by Internet search trends) resemble two well-established memory patterns: memory decay and goal-related memory accessibility. We examined national and international events (e.g., Nobel Prize selections, holidays) that produced spikes in widespread interest in certain people and foods. When the events that triggered widespread interest were incidental (e.g., the death of a celebrity), widespread interest conformed to memory decay patterns: It rose quickly, fell slowly according to a power function, and was higher after the event than before it. When the events that triggered widespread interest were goal related (e.g., political elections), widespread interest conformed to patterns of goal-related memory accessibility: It rose slowly, fell quickly according to a sigmoid function, and was lower after the event than before it. Fluctuations in widespread interest over time are thus similar to standard memory patterns observed at the individual level due perhaps to common mechanisms and functions. PMID:23127417

  6. A stochastic simulation method for the assessment of resistive random access memory retention reliability

    SciTech Connect

    Berco, Dan Tseng, Tseung-Yuen

    2015-12-21

    This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO{sub 2} device with a double layer ZnO/ZrO{sub 2} one, and obtain results which are in good agreement with experimental data.

  7. Remote Memory Access Protocol Target Node Intellectual Property

    NASA Technical Reports Server (NTRS)

    Haddad, Omar

    2013-01-01

    The MagnetoSpheric Multiscale (MMS) mission had a requirement to use the Remote Memory Access Protocol (RMAP) over its SpaceWire network. At the time, no known intellectual property (IP) cores were available for purchase. Additionally, MMS preferred to implement the RMAP functionality with control over the low-level details of the design. For example, not all the RMAP standard functionality was needed, and it was desired to implement only the portions of the RMAP protocol that were needed. RMAP functionality had been previously implemented in commercial off-the-shelf (COTS) products, but the IP core was not available for purchase. The RMAP Target IP core is a VHDL (VHSIC Hardware Description Language description of a digital logic design suitable for implementation in an FPGA (field-programmable gate array) or ASIC (application-specific integrated circuit) that parses SpaceWire packets that conform to the RMAP standard. The RMAP packet protocol allows a network host to access and control a target device using address mapping. This capability allows SpaceWire devices to be managed in a standardized way that simplifies the hardware design of the device, as well as the development of the software that controls the device. The RMAP Target IP core has some features that are unique and not specified in the RMAP standard. One such feature is the ability to automatically abort transactions if the back-end logic does not respond to read/write requests within a predefined time. When a request times out, the RMAP Target IP core automatically retracts the request and returns a command response with an appropriate status in the response packet s header. Another such feature is the ability to control the SpaceWire node or router using RMAP transactions in the extended address range. This allows the SpaceWire network host to manage the SpaceWire network elements using RMAP packets, which reduces the number of protocols that the network host needs to support.

  8. RAPID: A random access picture digitizer, display, and memory system

    NASA Technical Reports Server (NTRS)

    Yakimovsky, Y.; Rayfield, M.; Eskenazi, R.

    1976-01-01

    RAPID is a system capable of providing convenient digital analysis of video data in real-time. It has two modes of operation. The first allows for continuous digitization of an EIA RS-170 video signal. Each frame in the video signal is digitized and written in 1/30 of a second into RAPID's internal memory. The second mode leaves the content of the internal memory independent of the current input video. In both modes of operation the image contained in the memory is used to generate an EIA RS-170 composite video output signal representing the digitized image in the memory so that it can be displayed on a monitor.

  9. Experimental study on radiation effects in floating gate read-only-memories and static random access memories

    NASA Astrophysics Data System (ADS)

    He, Chao-Hui; Li, Yong-Hong

    2007-09-01

    Radiation effects of the floating gate read-only-memory (FG ROM) and the static random access memory (SRAM) have been evaluated using the 14 MeV neutron and 31.9MeV proton beams and Co-60 γ-rays. The neutron fluence, when the first error occurs in the FG ROMs, is at least 5 orders of magnitude higher than that in the SRAMs, and the proton fluence, 4 orders of magnitude higher. The total dose threshold for Co-60 γ-ray irradiation is about 104 rad (Si) for both memories. The difference and similarity are attributed to the structure of the memory cells and the mechanism of radiation effects. It is concluded that the FG ROMs are more reliable as semiconductor memories for storing data than the SRAMs, when they are used in the satellites or space crafts exposed to high energy particle radiation.

  10. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    NASA Technical Reports Server (NTRS)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  11. Development of Curie point switching for thin film, random access, memory device

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Tchernev, D. I.

    1967-01-01

    Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

  12. Control of Access to Memory: The Use of Task Interference as a Behavioral Probe

    ERIC Educational Resources Information Center

    Loft, Shayne; Humphreys, Michael S.; Whitney, Susannah J.

    2008-01-01

    Directed forgetting and prospective memory methods were combined to examine differences in the control of memory access. Between studying two lists of target words, participants were either instructed to forget the first list, or to continue remembering the first list. After study participants performed a lexical decision task with an additional…

  13. Low-Complexity Memory Access Architectures for Quasi-Cyclic LDPC Decoders

    NASA Astrophysics Data System (ADS)

    Shieh, Ming-Der; Fang, Shih-Hao; Tang, Shing-Chung; Yang, Der-Wei

    Partially parallel decoding architectures are widely used in the design of low-density parity-check (LDPC) decoders, especially for quasi-cyclic (QC) LDPC codes. To comply with the code structure of parity-check matrices of QC-LDPC codes, many small memory blocks are conventionally employed in this architecture. The total memory area usually dominates the area requirement of LDPC decoders. This paper proposes a low-complexity memory access architecture that merges small memory blocks into memory groups to relax the effect of peripherals in small memory blocks. A simple but efficient algorithm is also presented to handle the additional delay elements introduced in the memory merging method. Experiment results on a rate-1/2 parity-check matrix defined in the IEEE 802.16e standard show that the LDPC decoder designed using the proposed memory access architecture has the lowest area complexity among related studies. Compared to a design with the same specifications, the decoder implemented using the proposed architecture requires 33% fewer gates and is more power-efficient. The proposed new memory access architecture is thus suitable for the design of low-complexity LDPC decoders.

  14. Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories

    NASA Astrophysics Data System (ADS)

    Ohsawa, Takashi; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2014-01-01

    Array operation currents in spin-transfer-torque magnetic random access memories (STT-MRAMs) that use four differential pair type magnetic tunnel junction (MTJ)-based memory cells (4T2MTJ, two 6T2MTJs and 8T2MTJ) are simulated and compared with that in SRAM. With L3 cache applications in mind, it is assumed that the memories are composed of 32 Mbyte capacity to be accessed in 64 byte in parallel. All the STT-MRAMs except for the 8T2MTJ one are designed with 32 bit fine-grained power gating scheme applied to eliminate static currents in the memory cells that are not accessed. The 8T2MTJ STT-MRAM, the cell’s design concept being not suitable for the fine-grained power gating, loads and saves 32 Mbyte data in 64 Mbyte unit per 1 Mbit sub-array in 2 × 103 cycles. It is shown that the array operation current of the 4T2MTJ STT-MRAM is 70 mA averaged in 15 ns write cycles at Vdd = 0.9 V. This is the smallest among the STT-MRAMs, about the half of the low standby power (LSTP) SRAM whose array operation current is totally dominated by the cells’ subthreshold leakage.

  15. High speed magneto-resistive random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1992-01-01

    A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

  16. Asymmetrical access to color and location in visual working memory.

    PubMed

    Rajsic, Jason; Wilson, Daryl E

    2014-10-01

    Models of visual working memory (VWM) have benefitted greatly from the use of the delayed-matching paradigm. However, in this task, the ability to recall a probed feature is confounded with the ability to maintain the proper binding between the feature that is to be reported and the feature (typically location) that is used to cue a particular item for report. Given that location is typically used as a cue-feature, we used the delayed-estimation paradigm to compare memory for location to memory for color, rotating which feature was used as a cue and which was reported. Our results revealed several novel findings: 1) the likelihood of reporting a probed object's feature was superior when reporting location with a color cue than when reporting color with a location cue; 2) location report errors were composed entirely of swap errors, with little to no random location reports; and 3) both colour and location reports greatly benefitted from the presence of nonprobed items at test. This last finding suggests that it is uncertainty over the bindings between locations and colors at memory retrieval that drive swap errors, not at encoding. We interpret our findings as consistent with a representational architecture that nests remembered object features within remembered locations. PMID:25190322

  17. Phase-change Random Access Memory: A Scalable Technology

    SciTech Connect

    Raoux, S.; Burr, G; Breitwisch, M; Rettner, C; Chen, Y; Shelby, R; Salinga, M; Krebs, D; Chen, S; Lung, H

    2008-01-01

    Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms. We then discuss experiments that directly address the scaling properties of the phase-change materials themselves, including studies of phase transitions in both nanoparticles and ultrathin films as a function of particle size and film thickness. This work in materials directly motivated the successful creation of a series of prototype PCRAM devices, which have been fabricated and tested at phase-change material cross-sections with extremely small dimensions as low as 3 nm x 20 nm. These device measurements provide a clear demonstration of the excellent scaling potential offered by this technology, and they are also consistent with the scaling behavior predicted by extensive device simulations. Finally, we discuss issues of device integration and cell design, manufacturability, and reliability.

  18. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    SciTech Connect

    Ando, K. Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-05-07

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

  19. High Density Memory Based on Quantum Device Technology

    NASA Technical Reports Server (NTRS)

    vanderWagt, Paul; Frazier, Gary; Tang, Hao

    1995-01-01

    We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

  20. Chemical insight into origin of forming-free resistive random-access memory devices

    NASA Astrophysics Data System (ADS)

    Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, X. X.; Pey, K. L.

    2011-09-01

    We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOx multilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS) analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

  1. Conductive-bridging random access memory: challenges and opportunity for 3D architecture.

    PubMed

    Jana, Debanjan; Roy, Sourav; Panja, Rajeswar; Dutta, Mrinmoy; Rahaman, Sheikh Ziaur; Mahapatra, Rajat; Maikap, Siddheswar

    2015-01-01

    The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias. However, the growth dynamics of the metallic filament in different switching materials are still debated. All CBRAM devices are switching under an operation current of 0.1 μA to 1 mA, and an operation voltage of ±2 V is also needed. The device can reach a low current of 5 pA; however, current compliance-dependent reliability is a challenging issue. Although a chalcogenide-based material has opportunity to have better endurance as compared to an oxide-based material, data retention and integration with the complementary metal-oxide-semiconductor (CMOS) process are also issues. Devices with bilayer switching materials show better resistive switching characteristics as compared to those with a single switching layer, especially a program/erase endurance of >10(5) cycles with a high speed of few nanoseconds. Multi-level cell operation is possible, but the stability of the high resistance state is also an important reliability concern. These devices show a good data retention of >10(5) s at >85°C. However, more study is needed to achieve a 10-year guarantee of data retention for non-volatile memory application. The crossbar memory is benefited for high density with low power operation. Some CBRAM devices as a chip have been reported for proto-typical production. This review shows that operation current should be optimized for few microamperes with a maintaining speed of few nanoseconds, which will have challenges and also opportunities for three-dimensional (3D) architecture. PMID:25977660

  2. Accessing remote data bases using microcomputers

    PubMed Central

    Saul, Peter D.

    1985-01-01

    General practitioners' access to remote data bases using microcomputers is increasing, making even the most obscure information readily available. Some of the systems available to general practitioners in the UK are described and the methods of access are outlined. General practitioners should be aware of the advances in technology; data bases are increasing in size, the cost of access is falling and their use is becoming easier. PMID:4020756

  3. Electrical Evaluation of RCA MWS5501D Random Access Memory, Volume 2, Appendix a

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. The address access time, address readout time, the data hold time, and the data setup time are some of the results surveyed.

  4. Boosting the FM-Index on the GPU: Effective Techniques to Mitigate Random Memory Access.

    PubMed

    Chacón, Alejandro; Marco-Sola, Santiago; Espinosa, Antonio; Ribeca, Paolo; Moure, Juan Carlos

    2015-01-01

    The recent advent of high-throughput sequencing machines producing big amounts of short reads has boosted the interest in efficient string searching techniques. As of today, many mainstream sequence alignment software tools rely on a special data structure, called the FM-index, which allows for fast exact searches in large genomic references. However, such searches translate into a pseudo-random memory access pattern, thus making memory access the limiting factor of all computation-efficient implementations, both on CPUs and GPUs. Here, we show that several strategies can be put in place to remove the memory bottleneck on the GPU: more compact indexes can be implemented by having more threads work cooperatively on larger memory blocks, and a k-step FM-index can be used to further reduce the number of memory accesses. The combination of those and other optimisations yields an implementation that is able to process about two Gbases of queries per second on our test platform, being about 8 × faster than a comparable multi-core CPU version, and about 3 × to 5 × faster than the FM-index implementation on the GPU provided by the recently announced Nvidia NVBIO bioinformatics library. PMID:26451818

  5. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  6. 78 FR 35645 - Certain Static Random Access Memories and Products Containing Same; Commission Determination...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-13

    ... Cypress Semiconductor Corporation of San Jose, California (``Cypress''). 76 FR 45295 (July 28, 2011). The..., 2013, the Commission determined to review the RID in part, i.e., with respect to invalidity. See 78 FR... COMMISSION Certain Static Random Access Memories and Products Containing Same; Commission...

  7. 76 FR 2336 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Final Results of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-13

    ... Access Memory Semiconductors from the Republic of Korea, 68 FR 47546 (August 11, 2003) (``CVD Order... the Republic of Korea: Preliminary Results of Countervailing Duty Administrative Review, 75 FR 55764..., 73 FR 57594 (October 3, 2008). As a result, CBP is no longer suspending liquidation for entries...

  8. 77 FR 26789 - Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-07

    ... violation of section 337 in the infringement of certain patents. 73 FR 75131. The principal respondent was... order. 75 FR 44989-90 (July 30, 2010). The Commission also issued cease and desist orders against those... COMMISSION Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers...

  9. Making Physical Activity Accessible to Older Adults with Memory Loss: A Feasibility Study

    ERIC Educational Resources Information Center

    Logsdon, Rebecca G.; McCurry, Susan M.; Pike, Kenneth C.; Teri, Linda

    2009-01-01

    Purpose: For individuals with mild cognitive impairment (MCI), memory loss may prevent successful engagement in exercise, a key factor in preventing additional disability. The Resources and Activities for Life Long Independence (RALLI) program uses behavioral principles to make exercise more accessible for these individuals. Exercises are broken…

  10. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A; Mamidala, Amith R

    2014-02-11

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  11. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2013-09-03

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  12. 75 FR 20564 - Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-20

    ... Antidumping and Countervailing Duty Administrative Reviews and Requests for Revocation in Part, 74 FR 48224... International Trade Administration Dynamic Random Access Memory Semiconductors from the Republic of Korea... administrative review of the countervailing duty order on dynamic random access memory semiconductors from...

  13. Shared direct memory access on the Explorer 2-LX

    NASA Technical Reports Server (NTRS)

    Musgrave, Jeffrey L.

    1990-01-01

    Advances in Expert System technology and Artificial Intelligence have provided a framework for applying automated Intelligence to the solution of problems which were generally perceived as intractable using more classical approaches. As a result, hybrid architectures and parallel processing capability have become more common in computing environments. The Texas Instruments Explorer II-LX is an example of a machine which combines a symbolic processing environment, and a computationally oriented environment in a single chassis for integrated problem solutions. This user's manual is an attempt to make these capabilities more accessible to a wider range of engineers and programmers with problems well suited to solution in such an environment.

  14. ViSA: a neurodynamic model for visuo-spatial working memory, attentional blink, and conscious access.

    PubMed

    Simione, Luca; Raffone, Antonino; Wolters, Gezinus; Salmas, Paola; Nakatani, Chie; Belardinelli, Marta Olivetti; van Leeuwen, Cees

    2012-10-01

    Two separate lines of study have clarified the role of selectivity in conscious access to visual information. Both involve presenting multiple targets and distracters: one simultaneously in a spatially distributed fashion, the other sequentially at a single location. To understand their findings in a unified framework, we propose a neurodynamic model for Visual Selection and Awareness (ViSA). ViSA supports the view that neural representations for conscious access and visuo-spatial working memory are globally distributed and are based on recurrent interactions between perceptual and access control processors. Its flexible global workspace mechanisms enable a unitary account of a broad range of effects: It accounts for the limited storage capacity of visuo-spatial working memory, attentional cueing, and efficient selection with multi-object displays, as well as for the attentional blink and associated sparing and masking effects. In particular, the speed of consolidation for storage in visuo-spatial working memory in ViSA is not fixed but depends adaptively on the input and recurrent signaling. Slowing down of consolidation due to weak bottom-up and recurrent input as a result of brief presentation and masking leads to the attentional blink. Thus, ViSA goes beyond earlier 2-stage and neuronal global workspace accounts of conscious processing limitations.

  15. Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

    NASA Technical Reports Server (NTRS)

    Sharma, Ashok K.; Teverovsky, Alexander

    2001-01-01

    Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

  16. An empirical hierarchical memory model based on hardware performance counters

    SciTech Connect

    Lubeck, O.M.; Luo, Y.; Wasserman, H.; Bassetti, F.

    1998-09-01

    In this paper, the authors characterize application performance with a memory-centric view. Using a simple strategy and performance data measured by on-chip hardware performance counters, they model the performance of a simple memory hierarchy and infer the contribution of each level in the memory system to an application`s overall cycles per instruction (cpi). They account for the overlap of processor execution with memory accesses--a key parameter not directly measurable on most systems. They infer the separate contributions of three major architecture features in the memory subsystem of the Origin 2000: cache size, outstanding loads-under-miss, and memory latency.

  17. An energy-efficient SIMD DSP with multiple VLIW configurations and an advanced memory access unit for LTE-A modem LSIs

    NASA Astrophysics Data System (ADS)

    Tomono, Mitsuru; Ito, Makiko; Nomura, Yoshitaka; Mouri, Makoto; Hirose, Yoshio

    2015-12-01

    Energy efficiency is the most important factor in the design of wireless modem LSIs for mobile handset systems. We have developed an energy-efficient SIMD DSP for LTE-A modem LSIs. Our DSP has mainly two hardware features in order to reduce energy consumption. The first one is multiple VLIW configurations to minimize accesses to instruction memories. The second one is an advanced memory access unit to realize complex memory accesses required for wireless baseband processing. With these features, performance of our DSP is about 1.7 times faster than a base DSP on average for standard LTE-A Libraries. Our DSP achieves about 20% improvement in energy efficiency compared to a base DSP for LTE-A modem LSIs.

  18. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  19. Set statistics in conductive bridge random access memory device with Cu/HfO{sub 2}/Pt structure

    SciTech Connect

    Zhang, Meiyun; Long, Shibing Wang, Guoming; Xu, Xiaoxin; Li, Yang; Liu, Qi; Lv, Hangbing; Liu, Ming; Lian, Xiaojuan; Miranda, Enrique; Suñé, Jordi

    2014-11-10

    The switching parameter variation of resistive switching memory is one of the most important challenges in its application. In this letter, we have studied the set statistics of conductive bridge random access memory with a Cu/HfO{sub 2}/Pt structure. The experimental distributions of the set parameters in several off resistance ranges are shown to nicely fit a Weibull model. The Weibull slopes of the set voltage and current increase and decrease logarithmically with off resistance, respectively. This experimental behavior is perfectly captured by a Monte Carlo simulator based on the cell-based set voltage statistics model and the Quantum Point Contact electron transport model. Our work provides indications for the improvement of the switching uniformity.

  20. Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Pantelis, D. I.; Karakizis, P. N.; Dragatogiannis, D. A.; Charitidis, C. A.

    2016-06-01

    Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. In this chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed. Different MLC operation schemes with their physical mechanisms and a comprehensive analysis of resistance variability have been provided. Various factors that can induce variability and their effect on the resistance margin between the multiple resistance levels are assessed. The reliability characteristics and the impact on MLC storage have also been assessed.

  1. Effects of erbium doping of indium tin oxide electrode in resistive random access memory

    NASA Astrophysics Data System (ADS)

    Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-03-01

    Identical insulators and bottom electrodes were fabricated and capped by an indium tin oxide (ITO) film, either undoped or doped with erbium (Er), as a top electrode. This distinctive top electrode dramatically altered the resistive random access memory (RRAM) characteristics, for example, lowering the operation current and enlarging the memory window. In addition, the RESET voltage increased, whereas the SET voltage remained almost the same. A conduction model of Er-doped ITO is proposed through current-voltage (I-V) measurement and current fitting to explain the resistance switching mechanism of Er-doped ITO RRAM and is confirmed by material analysis and reliability tests.

  2. Protein-Based Three-Dimensional Memories and Associative Processors

    NASA Astrophysics Data System (ADS)

    Birge, Robert

    2008-03-01

    The field of bioelectronics has benefited from the fact that nature has often solved problems of a similar nature to those which must be solved to create molecular electronic or photonic devices that operate with efficiency and reliability. Retinal proteins show great promise in bioelectronic devices because they operate with high efficiency (˜0.65%), high cyclicity (>10^7), operate over an extended wavelength range (360 -- 630 nm) and can convert light into changes in voltage, pH, absorption or refractive index. This talk will focus on a retinal protein called bacteriorhodopsin, the proton pump of the organism Halobacterium salinarum. Two memories based on this protein will be described. The first is an optical three-dimensional memory. This memory stores information using volume elements (voxels), and provides as much as a thousand-fold improvement in effective capacity over current technology. A unique branching reaction of a variant of bacteriorhodopsin is used to turn each protein into an optically addressed latched AND gate. Although three working prototypes have been developed, a number of cost/performance and architectural issues must be resolved prior to commercialization. The major issue is that the native protein provides a very inefficient branching reaction. Genetic engineering has improved performance by nearly 500-fold, but a further order of magnitude improvement is needed. Protein-based holographic associative memories will also be discussed. The human brain stores and retrieves information via association, and human intelligence is intimately connected to the nature and enormous capacity of this associative search and retrieval process. To a first order approximation, creativity can be viewed as the association of two seemingly disparate concepts to form a totally new construct. Thus, artificial intelligence requires large scale associative memories. Current computer hardware does not provide an optimal environment for creating artificial

  3. Multiple number and letter comparison: directionality and accessibility in numeric and alphabetic memories.

    PubMed

    Jou, Jerwen

    2003-01-01

    In 3 experiments, subjects made comparativejudgments on a set of 2 numbers or letters, 3 numbers or letters, or 5 numbers or letters. Numeric and alphabetic serial order memories were contrasted. Three aspects of serial order memory processes were identified: computational complexity, directionality, and accessibility. Computational complexity is the number of algorithmic steps involved in identifying a target. Directional bias is measured as the speed differences in identifying serial targets of equal computational complexity in a stimulus array. Memory accessibility is measured as the numeric and alphabetic serial position effects. Subjects had a slight directional bias favoring backward ordering for single digits but no bias in 2-digit number ordering, in contrast to a strong forward directional advantage in letter ordering. The speed of number access was found to steadily and evenly decrease along the numeric scale, in contrast to a systematic pattern of variations in alphabet access along the alphabetic scale. Finally, the middle item effect (the middle item in a multi-item array is identified most slowly) found in Jou's (1997) multiple-letter comparison study was generalized to numbers.

  4. Large Capacity of Conscious Access for Incidental Memories in Natural Scenes.

    PubMed

    Kaunitz, Lisandro N; Rowe, Elise G; Tsuchiya, Naotsugu

    2016-09-01

    When searching a crowd, people can detect a target face only by direct fixation and attention. Once the target is found, it is consciously experienced and remembered, but what is the perceptual fate of the fixated nontarget faces? Whereas introspection suggests that one may remember nontargets, previous studies have proposed that almost no memory should be retained. Using a gaze-contingent paradigm, we asked subjects to visually search for a target face within a crowded natural scene and then tested their memory for nontarget faces, as well as their confidence in those memories. Subjects remembered up to seven fixated, nontarget faces with more than 70% accuracy. Memory accuracy was correlated with trial-by-trial confidence ratings, which implies that the memory was consciously maintained and accessed. When the search scene was inverted, no more than three nontarget faces were remembered. These findings imply that incidental memory for faces, such as those recalled by eyewitnesses, is more reliable than is usually assumed. PMID:27507869

  5. Optoelectronic Terminal-Attractor-Based Associative Memory

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang; Barhen, Jacob; Farhat, Nabil H.

    1994-01-01

    Report presents theoretical and experimental study of optically and electronically addressable optical implementation of artificial neural network that performs associative recall. Shows by computer simulation that terminal-attractor-based associative memory can have perfect convergence in associative retrieval and increased storage capacity. Spurious states reduced by exploiting terminal attractors.

  6. Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects

    NASA Astrophysics Data System (ADS)

    Shen, Jianxin; Cong, Junzhuang; Chai, Yisheng; Shang, Dashan; Shen, Shipeng; Zhai, Kun; Tian, Ying; Sun, Young

    2016-08-01

    The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We use an alternative concept of nonvolatile memory based, on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization, or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of nonvolatile memory has outstanding practical virtues such as simple structure, easy operation in writing and reading, low power, fast speed, and diverse materials available.

  7. Formal Description of Trust-based Access Control

    NASA Astrophysics Data System (ADS)

    Xiaoning, Ma

    Different from traditional access control technologies, such as discretionary access control, mandatory access control, role-based access control, trust-based access control can solve the problem of uncertainty, risk and vulnerability coming from authorization. In this paper, strict definition and formal description of trust-based access control is defined.

  8. The Development of Time-Based Prospective Memory in Childhood: The Role of Working Memory Updating

    ERIC Educational Resources Information Center

    Voigt, Babett; Mahy, Caitlin E. V.; Ellis, Judi; Schnitzspahn, Katharina; Krause, Ivonne; Altgassen, Mareike; Kliegel, Matthias

    2014-01-01

    This large-scale study examined the development of time-based prospective memory (PM) across childhood and the roles that working memory updating and time monitoring play in driving age effects in PM performance. One hundred and ninety-seven children aged 5 to 14 years completed a time-based PM task where working memory updating load was…

  9. Solution-processed carbon nanotube thin-film complementary static random access memory

    NASA Astrophysics Data System (ADS)

    Geier, Michael L.; McMorrow, Julian J.; Xu, Weichao; Zhu, Jian; Kim, Chris H.; Marks, Tobin J.; Hersam, Mark C.

    2015-11-01

    Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.

  10. Anomalous random telegraph noise and temporary phenomena in resistive random access memory

    NASA Astrophysics Data System (ADS)

    Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo

    2016-11-01

    In this paper we present a comprehensive examination of the characteristics of complex Random Telegraph Noise (RTN) signals in Resistive Random Access Memory (RRAM) devices with TiN/Ti/HfO2/TiN structure. Initially, the anomalous RTN (aRTN) is investigated through careful systematic experiment, dedicated characterization procedures, and physics-based simulations to gain insights into the physics of this phenomenon. The experimentally observed RTN parameters (amplitude of the current fluctuations, capture and emission times) are analyzed in different operating conditions. Anomalous behaviors are characterized and their statistical characteristics are evaluated. Physics-based simulations considering both the Coulomb interactions among different defects in the device and the possible existence of defects with metastable states are exploited to suggest a possible physical origin of aRTN. The same simulation framework is also shown to be able to predict other temporary phenomena related to RTN, such as the temporary change in RTN stochastic properties or the sudden and iterative random appearing and vanishing of RTN fluctuations always exhibiting the same statistical characteristics. Results highlight the central role of the electrostatic interactions among individual defects and the trapped charge in describing RTN and related phenomena.

  11. Solution-processed carbon nanotube thin-film complementary static random access memory.

    PubMed

    Geier, Michael L; McMorrow, Julian J; Xu, Weichao; Zhu, Jian; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2015-11-01

    Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. PMID:26344184

  12. New memory devices based on the proton transfer process.

    PubMed

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge-saturated with oxygen or the hydroxy group-and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. PMID:26596910

  13. New memory devices based on the proton transfer process

    NASA Astrophysics Data System (ADS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  14. Design of Unstructured Adaptive (UA) NAS Parallel Benchmark Featuring Irregular, Dynamic Memory Accesses

    NASA Technical Reports Server (NTRS)

    Feng, Hui-Yu; VanderWijngaart, Rob; Biswas, Rupak; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We describe the design of a new method for the measurement of the performance of modern computer systems when solving scientific problems featuring irregular, dynamic memory accesses. The method involves the solution of a stylized heat transfer problem on an unstructured, adaptive grid. A Spectral Element Method (SEM) with an adaptive, nonconforming mesh is selected to discretize the transport equation. The relatively high order of the SEM lowers the fraction of wall clock time spent on inter-processor communication, which eases the load balancing task and allows us to concentrate on the memory accesses. The benchmark is designed to be three-dimensional. Parallelization and load balance issues of a reference implementation will be described in detail in future reports.

  15. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 5, Appendix D

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS 5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Average input high current, worst case input high current, output low current, and data setup time are some of the results presented.

  16. Transistor-level characterization of static random access memory bit failures induced by random telegraph noise

    NASA Astrophysics Data System (ADS)

    Mizutani, Tomoko; Saraya, Takuya; Takeuchi, Kiyoshi; Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-04-01

    Bit failure events induced by random telegraph noise (RTN) for silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells were characterized by directly monitoring the storage node voltage of individual cells, using a device-matrix-array (DMA) test element group (TEG). Correlating the cell-level RTN and failure waveforms with the RTN waveforms of individual transistors that constitute the same cell, RTN of a specific transistor that causes the cell failure was identified.

  17. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 4, Appendix C

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Statistical analysis data is supplied along with write pulse width, read cycle time, write cycle time, and chip enable time data.

  18. Immigration, language proficiency, and autobiographical memories: Lifespan distribution and second-language access.

    PubMed

    Esposito, Alena G; Baker-Ward, Lynne

    2016-08-01

    This investigation examined two controversies in the autobiographical literature: how cross-language immigration affects the distribution of autobiographical memories across the lifespan and under what circumstances language-dependent recall is observed. Both Spanish/English bilingual immigrants and English monolingual non-immigrants participated in a cue word study, with the bilingual sample taking part in a within-subject language manipulation. The expected bump in the number of memories from early life was observed for non-immigrants but not immigrants, who reported more memories for events surrounding immigration. Aspects of the methodology addressed possible reasons for past discrepant findings. Language-dependent recall was influenced by second-language proficiency. Results were interpreted as evidence that bilinguals with high second-language proficiency, in contrast to those with lower second-language proficiency, access a single conceptual store through either language. The final multi-level model predicting language-dependent recall, including second-language proficiency, age of immigration, internal language, and cue word language, explained ¾ of the between-person variance and (1)/5 of the within-person variance. We arrive at two conclusions. First, major life transitions influence the distribution of memories. Second, concept representation across multiple languages follows a developmental model. In addition, the results underscore the importance of considering language experience in research involving memory reports.

  19. Polyalkene-based shape-memory polymers

    NASA Astrophysics Data System (ADS)

    Alonso, J.; Cuevas, J. M.; Dios, J. R.; Vilas, J. L.; León, L. M.

    2007-07-01

    A series of polymers showing shape memory properties were developed based on polyalkenes derived from cyclooctene and related structures. These polymeric systems were synthesized via ring-opening metathesis polymerization (ROMP) using a well-defined ruthenium catalyst (Grubbs' type) by varying reaction conditions and proportions. Control over molecular weight was achieved by the inclusion of a chain transfer agent (CTA) and its influence on the behaviour of the obtained materials was evaluated. In order to provide them with shape memory behaviour the compounds were subjected to suitable chemical-thermal treatments and its characterization was accomplished by means of several techniques: differential scanning calorimetry (DSC), dynamic mechanical thermal analysis (DMTA), etc. Thus polymers developed herein could become a different alternative to the most studied and commercially available polyurethane based systems.

  20. Daily Access to Sucrose Impairs Aspects of Spatial Memory Tasks Reliant on Pattern Separation and Neural Proliferation in Rats

    ERIC Educational Resources Information Center

    Reichelt, Amy C.; Morris, Margaret J.; Westbrook, Reginald Frederick

    2016-01-01

    High sugar diets reduce hippocampal neurogenesis, which is required for minimizing interference between memories, a process that involves "pattern separation." We provided rats with 2 h daily access to a sucrose solution for 28 d and assessed their performance on a spatial memory task. Sucrose consuming rats discriminated between objects…

  1. 75 FR 44283 - In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-28

    ... America Corp. of Milpitas, California (collectively ``complainants''). 75 FR 14467-68 (March 25, 2010... COMMISSION In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of a Commission Determination Not To Review an Initial...

  2. Encoding and Retrieval Processes Involved in the Access of Source Information in the Absence of Item Memory

    ERIC Educational Resources Information Center

    Ball, B. Hunter; DeWitt, Michael R.; Knight, Justin B.; Hicks, Jason L.

    2014-01-01

    The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were "related" to the target item but never actually studied.…

  3. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    NASA Astrophysics Data System (ADS)

    Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

    2016-08-01

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  4. Belief inhibition in children's reasoning: memory-based evidence.

    PubMed

    Steegen, Sara; De Neys, Wim

    2012-06-01

    Adult reasoning has been shown as mediated by the inhibition of intuitive beliefs that are in conflict with logic. The current study introduces a classic procedure from the memory field to investigate belief inhibition in 12- to 17-year-old reasoners. A lexical decision task was used to probe the memory accessibility of beliefs that were cued during thinking on syllogistic reasoning problems. Results indicated an impaired memory access for words associated with misleading beliefs that were cued during reasoning if syllogisms had been solved correctly. This finding supports the claim that even for younger reasoners, correct reasoning is mediated by inhibitory processing as soon as intuitive beliefs conflict with logical considerations.

  5. Goal-Directed Modulation of Neural Memory Patterns: Implications for fMRI-Based Memory Detection.

    PubMed

    Uncapher, Melina R; Boyd-Meredith, J Tyler; Chow, Tiffany E; Rissman, Jesse; Wagner, Anthony D

    2015-06-01

    Remembering a past event elicits distributed neural patterns that can be distinguished from patterns elicited when encountering novel information. These differing patterns can be decoded with relatively high diagnostic accuracy for individual memories using multivoxel pattern analysis (MVPA) of fMRI data. Brain-based memory detection--if valid and reliable--would have clear utility beyond the domain of cognitive neuroscience, in the realm of law, marketing, and beyond. However, a significant boundary condition on memory decoding validity may be the deployment of "countermeasures": strategies used to mask memory signals. Here we tested the vulnerability of fMRI-based memory detection to countermeasures, using a paradigm that bears resemblance to eyewitness identification. Participants were scanned while performing two tasks on previously studied and novel faces: (1) a standard recognition memory task; and (2) a task wherein they attempted to conceal their true memory state. Univariate analyses revealed that participants were able to strategically modulate neural responses, averaged across trials, in regions implicated in memory retrieval, including the hippocampus and angular gyrus. Moreover, regions associated with goal-directed shifts of attention and thought substitution supported memory concealment, and those associated with memory generation supported novelty concealment. Critically, whereas MVPA enabled reliable classification of memory states when participants reported memory truthfully, the ability to decode memory on individual trials was compromised, even reversing, during attempts to conceal memory. Together, these findings demonstrate that strategic goal states can be deployed to mask memory-related neural patterns and foil memory decoding technology, placing a significant boundary condition on their real-world utility. PMID:26041920

  6. Stream specificity and asymmetries in feature binding and content-addressable access in visual encoding and memory.

    PubMed

    Huynh, Duong L; Tripathy, Srimant P; Bedell, Harold E; Ögmen, Haluk

    2015-01-01

    Human memory is content addressable-i.e., contents of the memory can be accessed using partial information about the bound features of a stored item. In this study, we used a cross-feature cuing technique to examine how the human visual system encodes, binds, and retains information about multiple stimulus features within a set of moving objects. We sought to characterize the roles of three different features (position, color, and direction of motion, the latter two of which are processed preferentially within the ventral and dorsal visual streams, respectively) in the construction and maintenance of object representations. We investigated the extent to which these features are bound together across the following processing stages: during stimulus encoding, sensory (iconic) memory, and visual short-term memory. Whereas all features examined here can serve as cues for addressing content, their effectiveness shows asymmetries and varies according to cue-report pairings and the stage of information processing and storage. Position-based indexing theories predict that position should be more effective as a cue compared to other features. While we found a privileged role for position as a cue at the stimulus-encoding stage, position was not the privileged cue at the sensory and visual short-term memory stages. Instead, the pattern that emerged from our findings is one that mirrors the parallel processing streams in the visual system. This stream-specific binding and cuing effectiveness manifests itself in all three stages of information processing examined here. Finally, we find that the Leaky Flask model proposed in our previous study is applicable to all three features.

  7. Stream specificity and asymmetries in feature binding and content-addressable access in visual encoding and memory.

    PubMed

    Huynh, Duong L; Tripathy, Srimant P; Bedell, Harold E; Ögmen, Haluk

    2015-01-01

    Human memory is content addressable-i.e., contents of the memory can be accessed using partial information about the bound features of a stored item. In this study, we used a cross-feature cuing technique to examine how the human visual system encodes, binds, and retains information about multiple stimulus features within a set of moving objects. We sought to characterize the roles of three different features (position, color, and direction of motion, the latter two of which are processed preferentially within the ventral and dorsal visual streams, respectively) in the construction and maintenance of object representations. We investigated the extent to which these features are bound together across the following processing stages: during stimulus encoding, sensory (iconic) memory, and visual short-term memory. Whereas all features examined here can serve as cues for addressing content, their effectiveness shows asymmetries and varies according to cue-report pairings and the stage of information processing and storage. Position-based indexing theories predict that position should be more effective as a cue compared to other features. While we found a privileged role for position as a cue at the stimulus-encoding stage, position was not the privileged cue at the sensory and visual short-term memory stages. Instead, the pattern that emerged from our findings is one that mirrors the parallel processing streams in the visual system. This stream-specific binding and cuing effectiveness manifests itself in all three stages of information processing examined here. Finally, we find that the Leaky Flask model proposed in our previous study is applicable to all three features. PMID:26382005

  8. Realization of a reversible switching in TaO{sub 2} polymorphs via Peierls distortion for resistance random access memory

    SciTech Connect

    Zhu, Linggang; Sun, Zhimei; Zhou, Jian; Guo, Zhonglu

    2015-03-02

    Transition-metal-oxide based resistance random access memory (RRAM) is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate materials used in the memories becomes an urgent task. Here, a structure with the TaO{sub 2} formula was predicted using evolutionary algorithms in combination with first-principles calculations. This triclinic structure (T-TaO{sub 2}) is both energetically and dynamically more favorable than the commonly believed rutile structure (R-TaO{sub 2}). The metal-insulator transition (MIT) between metallic R-TaO{sub 2} and T-TaO{sub 2} (band gap: 1.0 eV) is via a Peierls distortion, which makes TaO{sub 2} a potential candidate for RRAM. The energy barrier for the reversible phase transition is 0.19 eV/atom and 0.23 eV/atom, respectively, suggesting low power consumption for the resistance switch. The present findings about the MIT as the resistance-switch mechanism in Ta-O system will stimulate experimental work to fabricate tantalum oxides based RRAM.

  9. Low-power resistive random access memory by confining the formation of conducting filaments

    NASA Astrophysics Data System (ADS)

    Huang, Yi-Jen; Shen, Tzu-Hsien; Lee, Lan-Hsuan; Wen, Cheng-Yen; Lee, Si-Chen

    2016-06-01

    Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiOx/silver nanoparticles/TiOx/AlTiOx, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiOx layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

  10. Atom-Role-Based Access Control Model

    NASA Astrophysics Data System (ADS)

    Cai, Weihong; Huang, Richeng; Hou, Xiaoli; Wei, Gang; Xiao, Shui; Chen, Yindong

    Role-based access control (RBAC) model has been widely recognized as an efficient access control model and becomes a hot research topic of information security at present. However, in the large-scale enterprise application environments, the traditional RBAC model based on the role hierarchy has the following deficiencies: Firstly, it is unable to reflect the role relationships in complicated cases effectively, which does not accord with practical applications. Secondly, the senior role unconditionally inherits all permissions of the junior role, thus if a user is under the supervisor role, he may accumulate all permissions, and this easily causes the abuse of permission and violates the least privilege principle, which is one of the main security principles. To deal with these problems, we, after analyzing permission types and role relationships, proposed the concept of atom role and built an atom-role-based access control model, called ATRBAC, by dividing the permission set of each regular role based on inheritance path relationships. Through the application-specific analysis, this model can well meet the access control requirements.

  11. Gate controllable resistive random access memory devices using reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Hazra, Preetam; Resmi, A. N.; Jinesh, K. B.

    2016-04-01

    The biggest challenge in the resistive random access memory (ReRAM) technology is that the basic operational parameters, such as the set and reset voltages, the current on-off ratios (hence the power), and their operational speeds, strongly depend on the active and electrode materials and their processing methods. Therefore, for its actual technological implementations, the unification of the operational parameters of the ReRAM devices appears to be a difficult task. In this letter, we show that by fabricating a resistive memory device in a thin film transistor configuration and thus applying an external gate bias, we can control the switching voltage very accurately. Taking partially reduced graphene oxide, the gate controllable switching is demonstrated, and the possible mechanisms are discussed.

  12. Self-assembled tin dioxide for forming-free resistive random-access memory application

    NASA Astrophysics Data System (ADS)

    Hong, Ying-Jhan; Wang, Tsang-Hsuan; Wei, Shih-Yuan; Chang, Pin; Yew, Tri-Rung

    2016-06-01

    A novel resistive switching structure, tin-doped indium oxide (ITO)/SnO2- x (defined as SnO2 with oxygen vacancies)/SnS was demonstrated with a set voltage of 0.38 V, a reset voltage of -0.15 V, a ratio of high resistance to low resistance of 544, and forming-free and nonlinear current-voltage (I-V) characteristics. The interface of the ITO and the self-assembled SnO2- x contributed to the resistive switching behavior. This device showed great potential for resistive random access memory (RRAM) application and solving the sneak path problem in cross-bar memory arrays. Furthermore, a nanostructured resistive switching device was demonstrated successfully.

  13. Extremely small test cell structure for resistive random access memory element with removable bottom electrode

    SciTech Connect

    Koh, Sang-Gyu; Kishida, Satoru; Kinoshita, Kentaro

    2014-02-24

    We established a method of preparing an extremely small memory cell by fabricating a resistive random access memory (ReRAM) structure on the tip of a cantilever of an atomic force microscope. This structure has the high robustness against the drift of the cantilever, and the effective cell size was estimated to be less than 10 nm in diameter due to the electric field concentration at the tip of the cantilever, which was confirmed using electric field simulation. The proposed structure, which has a removable bottom electrode, enables not only the preparation of a tiny ReRAM structure but also the performance of unique experiments, by making the most of its high robustness against the drift of the cantilever.

  14. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

    PubMed Central

    Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

    2011-01-01

    The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

  15. Electronic implementation of associative memory based on neural network models

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Lambe, John; Thakoor, A. P.

    1987-01-01

    An electronic embodiment of a neural network based associative memory in the form of a binary connection matrix is described. The nature of false memory errors, their effect on the information storage capacity of binary connection matrix memories, and a novel technique to eliminate such errors with the help of asymmetrical extra connections are discussed. The stability of the matrix memory system incorporating a unique local inhibition scheme is analyzed in terms of local minimization of an energy function. The memory's stability, dynamic behavior, and recall capability are investigated using a 32-'neuron' electronic neural network memory with a 1024-programmable binary connection matrix.

  16. Effects of automatic/controlled access processes on semantic memory in Alzheimer's disease.

    PubMed

    Arroyo-Anlló, Eva M; Bellouard, Stéphanie; Ingrand, Pierre; Gil, Roger

    2011-01-01

    This study examines the impact of automatic/controlled access processes on the semantic network in 30 patients with Alzheimer's disease (AD). The AD group was compared with a control group using a battery of neuropsychological tests, a variation of Hodges's semantic testing battery, designed to assess semantic knowledge. The AD group had markedly lower scores than the normal group on each semantic test, but with a different degree of deterioration depending on the nature of the processes (controlled/automatic) in accessing the semantic network. AD patients had poorer performances on the explicit semantic tasks mainly involving controlled-process access (e.g., the WAIS Similarities Subtest) than those involving mainly automatic-process access (e.g., the Verbal Automatism test). Analyses of confidence intervals allowed a gradient of impaired performances in increasing order to be elaborated: a) the Verbal Automatism test, b) the WAIS Vocabulary Subtest, c) the WAIS Information Subtest, d) the Letter Fluency Task, e) Naming as a Response to Definition, f) the Category Fluency Task, g) the WAIS Similarities Subtest, and h) the Oral Denomination 80 Test. The results of our study suggest that explicit semantic tasks needing passive or automatic processes to access semantic memory would be better preserved in AD. PMID:21471640

  17. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    SciTech Connect

    Thomas, Luc Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-07

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 k{sub B}T/μA, energy barriers higher than 100 k{sub B}T at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  18. Magnetoelectric assisted 180° magnetization switching for electric field addressable writing in magnetoresistive random-access memory.

    PubMed

    Wang, Zhiguang; Zhang, Yue; Wang, Yaojin; Li, Yanxi; Luo, Haosu; Li, Jiefang; Viehland, Dwight

    2014-08-26

    Magnetization-based memories, e.g., hard drive and magnetoresistive random-access memory (MRAM), use bistable magnetic domains in patterned nanomagnets for information recording. Electric field (E) tunable magnetic anisotropy can lower the energy barrier between two distinct magnetic states, promising reduced power consumption and increased recording density. However, integration of magnetoelectric heterostructure into MRAM is a highly challenging task owing to the particular architecture requirements of each component. Here, we show an epitaxial growth of self-assembled CoFe2O4 nanostripes with bistable in-plane magnetizations on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) substrates, where the magnetic switching can be triggered by E-induced elastic strain effect. An unprecedented magnetic coercive field change of up to 600 Oe was observed with increasing E. A near 180° magnetization rotation can be activated by E in the vicinity of the magnetic coercive field. These findings might help to solve the 1/2-selection problem in traditional MRAM by providing reduced magnetic coercive field in E field selected memory cells. PMID:25093903

  19. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    NASA Astrophysics Data System (ADS)

    Thomas, Luc; Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-01

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  20. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    NASA Astrophysics Data System (ADS)

    Huang, Da; Wu, Jun-Jie; Tang, Yu-Hua

    2013-03-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings.

  1. Random access memory immune to single event upset using a T-resistor

    DOEpatents

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  2. A random access memory immune to single event upset using a T-Resistor

    DOEpatents

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  3. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    SciTech Connect

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-07

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  4. Information matching the content of visual working memory is prioritized for conscious access.

    PubMed

    Gayet, Surya; Paffen, Chris L E; Van der Stigchel, Stefan

    2013-12-01

    Visual working memory (VWM) is used to retain relevant information for imminent goal-directed behavior. In the experiments reported here, we found that VWM helps to prioritize relevant information that is not yet available for conscious experience. In five experiments, we demonstrated that information matching VWM content reaches visual awareness faster than does information not matching VWM content. Our findings suggest a functional link between VWM and visual awareness: The content of VWM is recruited to funnel down the vast amount of sensory input to that which is relevant for subsequent behavior and therefore requires conscious access.

  5. One electron-controlled multiple-valued dynamic random-access-memory

    NASA Astrophysics Data System (ADS)

    Kye, H. W.; Song, B. N.; Lee, S. E.; Kim, J. S.; Shin, S. J.; Choi, J. B.; Yu, Y.-S.; Takahashi, Y.

    2016-02-01

    We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET). The gate of a SET is designed to be connected to a plurality of DRAM unit cells that are arrayed at intersections of word lines and bitlines. In this SET-DRAM hybrid scheme, the multiple switching characteristics of SET enables multiple value data stored in a DRAM unit cell, and this increases the storage functionality of the device. Moreover, since refreshing data requires only a small amount of SET driving current, this enables device operating with low standby power consumption.

  6. Temperature effects on failure and annealing behavior in dynamic random access memories

    NASA Astrophysics Data System (ADS)

    Wilkin, N. D.; Self, C. T.

    1982-12-01

    Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finally a description of the test instrumentation and irradiation procedures are given.

  7. Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory

    NASA Astrophysics Data System (ADS)

    Bae, Junsoo; Hwang, Kyuman; Park, Kwangho; Jeon, Seongbu; Kang, Dae-hwan; Park, Soonoh; Ahn, Juhyeon; Kim, Seoksik; Jeong, Gitae; Chung, Chilhee

    2011-04-01

    The cell failures after cycling endurance in phase-change random access memory (PRAM) have been classified into three groups, which have been analyzed by transmission electron microscopy (TEM). Both stuck reset of the set state (D0) and stuck set of the reset state (D1) are due to a void created inside GeSbTe (GST) film or thereby lowering density of GST film. The decrease of the both set and reset resistances that leads to the tails from the reset distribution are induced from the Sb increase with cycles.

  8. [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

    NASA Astrophysics Data System (ADS)

    Liu, E.; Swerts, J.; Couet, S.; Mertens, S.; Tomczak, Y.; Lin, T.; Spampinato, V.; Franquet, A.; Van Elshocht, S.; Kar, G.; Furnemont, A.; De Boeck, J.

    2016-03-01

    Alternative free layer materials with high perpendicular anisotropy are researched to provide spin-transfer-torque magnetic random access memory stacks' sufficient thermal stability at critical dimensions of 20 nm and below. We demonstrate a high tunnel magetoresistance (TMR) MgO-based magnetic tunnel junction stack with a hybrid free layer design made of a [Co/Ni] multilayer and CoFeB. The seed material on which the [Co/Ni] multilayer is deposited determines its switching characteristics. When deposited on a Pt seed layer, soft magnetic switching behavior with high squareness is obtained. When deposited on a NiCr seed, the perpendicular anisotropy remains high, but the squareness is low and coercivity exceeds 1000 Oe. Interdiffusion of the seed material with the [Co/Ni] multilayers is found to be responsible for the different switching characteristics. In optimized stacks, a TMR of 165% and low resistance-area (RA) product of 7.0 Ω μm2 are attained for free layers with an effective perpendicular magnetic anisotropy energy of 1.25 erg/cm2, which suggests that the hybrid free layer materials may be a viable candidate for high density magnetic random access memory applications.

  9. Nanodot-based organic memory devices

    NASA Astrophysics Data System (ADS)

    Liu, Zhengchun

    2006-04-01

    In this study, resistor-type, diode-type, and transistor-type organic memory devices were investigated, aiming at the low-cost plastic integrated circuit applications. A series of solution-processing techniques including spin-coating, inkjet printing, and self-assembly were employed to fabricate these devices. The organic resistive memory device is based on a novel molecular complex film composed of tetracyanoquinodimethane (TCNQ) and a soluble methanofullerene derivative [6,6]-phenyl C61-butyric acid methyl ester (PCBM). It has an Al/molecules/Al sandwich structure. The molecular layer was formed by spin-coating technique instead of expensive vacuum deposition method. The current-voltage characteristics show that the device switches from the initial 'low' conduction state to 'high' conduction state upon application of external electric field at room temperature and return to 'low' conduction state when a high current pulse is applied. The on/off ratio is over 106. Each state has been found to remain stable for more than five months, even after the external electric field is removed. The PCBM nanodots wrapped by TCNQ molecules can form potential wells for charge trapping, and are believed to be responsible for the memory effects. A rewritable diode memory device was achieved in an improved configuration, i.e., ITO-PEDOT:PSS-PCBM/TCNQ-Al, where a semiconductor polymer PEDOT:PSS is used to form p+-N heterojunction with PCBM/TCNQ. It exhibits a diode characteristic (low conductive) before switching to a high-conductive Poole-Frenkel regime upon applying a positive external bias to ITO. The on/off ratio at +1.0 V is up to 105. Simulation results from Taurus-Medici are in qualitative agreement with the experimental results and the proposed charge storage model. The transistor-type memory device is fabricated on a heavily doped n-type silicon (n+-Si) substrate with a 100 nm thick thermally-grown oxide layer. The n+-Si serves as the gate electrode, while the oxide layer

  10. A Multinomial Model of Event-Based Prospective Memory

    ERIC Educational Resources Information Center

    Smith, Rebekah E.; Bayen, Ute J.

    2004-01-01

    Prospective memory is remembering to perform an action in the future. The authors introduce the 1st formal model of event-based prospective memory, namely, a multinomial model that includes 2 separate parameters related to prospective memory processes. The 1st measures preparatory attentional processes, and the 2nd measures retrospective memory…

  11. Predictors of Time-Based Prospective Memory in Children

    ERIC Educational Resources Information Center

    Mackinlay, Rachael J.; Kliegel, Matthias; Mantyla, Timo

    2009-01-01

    This study identified age differences in time-based prospective memory performance in school-aged children and explored possible cognitive correlates of age-related performance. A total of 56 7- to 12-year-olds performed a prospective memory task in which prospective memory accuracy, ongoing task performance, and time monitoring were assessed.…

  12. Episodic memories predict adaptive value-based decision-making.

    PubMed

    Murty, Vishnu P; FeldmanHall, Oriel; Hunter, Lindsay E; Phelps, Elizabeth A; Davachi, Lila

    2016-05-01

    Prior research illustrates that memory can guide value-based decision-making. For example, previous work has implicated both working memory and procedural memory (i.e., reinforcement learning) in guiding choice. However, other types of memories, such as episodic memory, may also influence decision-making. Here we test the role for episodic memory-specifically item versus associative memory-in supporting value-based choice. Participants completed a task where they first learned the value associated with trial unique lotteries. After a short delay, they completed a decision-making task where they could choose to reengage with previously encountered lotteries, or new never before seen lotteries. Finally, participants completed a surprise memory test for the lotteries and their associated values. Results indicate that participants chose to reengage more often with lotteries that resulted in high versus low rewards. Critically, participants not only formed detailed, associative memories for the reward values coupled with individual lotteries, but also exhibited adaptive decision-making only when they had intact associative memory. We further found that the relationship between adaptive choice and associative memory generalized to more complex, ecologically valid choice behavior, such as social decision-making. However, individuals more strongly encode experiences of social violations-such as being treated unfairly, suggesting a bias for how individuals form associative memories within social contexts. Together, these findings provide an important integration of episodic memory and decision-making literatures to better understand key mechanisms supporting adaptive behavior. PMID:26999046

  13. Research about Memory Detection Based on the Embedded Platform

    NASA Astrophysics Data System (ADS)

    Sun, Hao; Chu, Jian

    As is known to us all, the resources of memory detection of the embedded systems are very limited. Taking the Linux-based embedded arm as platform, this article puts forward two efficient memory detection technologies according to the characteristics of the embedded software. Especially for the programs which need specific libraries, the article puts forwards portable memory detection methods to help program designers to reduce human errors,improve programming quality and therefore make better use of the valuable embedded memory resource.

  14. Resistive switching memory based on bioinspired natural solid polymer electrolytes.

    PubMed

    Raeis Hosseini, Niloufar; Lee, Jang-Sik

    2015-01-27

    A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.

  15. 40-Gbit/s photonic random access memory for photonic packet-switched networks

    NASA Astrophysics Data System (ADS)

    Takahashi, Ryo; Nakahara, Tatsushi; Takahata, Kiyoto; Takenouchi, Hirokazu; Yasui, Takako; Kondo, Naoto; Suzuki, Hiroyuki

    2004-06-01

    We present a photonic random access memory (RAM) that can write and read high-speed asynchronous burst optical packets freely by specifying addresses. The photonic RAM consists of an optical clock-pulse generator, an all-optical serial-to-parallel converter, a photonic parallel-to-serial converter, all developed by us, and a CMOS RAM as a storage medium. Unlike conventional optical buffers, which merely function as optical delay lines, the photonic RAM provides various advantages, such as compactness, large capacity, long-term storage, and random access at an arbitrary timing for ultrafast asynchronous burst optical packets. We experimentally confirm its basic operation for 40-Gbit/s 16-bit optical packets.

  16. Success with Web-based image access.

    PubMed

    Harrison, Sean W

    2003-01-01

    The University of Mississippi Medical Center in Jackson, Miss., is the only medical school in the state. We performed 235,000 procedures in the 2001-02 fiscal year. All imaging services within the radiology department are networked to a PACS and are filmless. The elimination of film required that we decentralize our traditional file room to allow easy access to our radiology network across the campus. In our facility, there are three levels of image access: Diagnostic Quality, Review Quality and Web Access. Diagnostic Quality requires top-of-the-line workstations and monitors and is the most expensive. Review Quality workstations represent some savings over Diagnostic and are used in the ICU, orthopedics and surgery. Web Access appears to satisfy most areas outside the main diagnostic department. The account set-up procedure is simple because it uses our intranet email system. Images are easily pasted into presentation applications for articles and conferences. However, the main advantage of Web Access is the low cost. The downside of Web Access is that the images are for review only and are limited by the quality of the monitor in use. It is also somewhat cumbersome to retrieve old or comparison images via this method. The Web only holds approximately 45 days of the most recent images, therefore older studies may not be available. The deployment of this Web-based service has aided in our efforts to reduce the amount of film we print and has also been beneficial in improving patient care through faster service. PMID:12800563

  17. Analyzing the Energy and Power Consumption of Remote Memory Accesses in the OpenSHMEM Model

    SciTech Connect

    Jana, Siddhartha; Hernandez, Oscar R; Poole, Stephen W; Hsu, Chung-Hsing; Chapman, Barbara

    2014-01-01

    PGAS models like OpenSHMEM provide interfaces to explicitly initiate one-sided remote memory accesses among processes. In addition, the model also provides synchronizing barriers to ensure a consistent view of the distributed memory at different phases of an application. The incorrect use of such interfaces affects the scalability achievable while using a parallel programming model. This study aims at understanding the effects of these constructs on the energy and power consumption behavior of OpenSHMEM applications. Our experiments show that cost incurred in terms of the total energy and power consumed depends on multiple factors across the software and hardware stack. We conclude that there is a significant impact on the power consumed by the CPU and DRAM due to multiple factors including the design of the data transfer patterns within an application, the design of the communication protocols within a middleware, the architectural constraints laid by the interconnect solutions, and also the levels of memory hierarchy within a compute node. This work motivates treating energy and power consumption as important factors while designing compute solutions for current and future distributed systems.

  18. Multiple social identities and stereotype threat: imbalance, accessibility, and working memory.

    PubMed

    Rydell, Robert J; McConnell, Allen R; Beilock, Sian L

    2009-05-01

    In 4 experiments, the authors showed that concurrently making positive and negative self-relevant stereotypes available about performance in the same ability domain can eliminate stereotype threat effects. Replicating past work, the authors demonstrated that introducing negative stereotypes about women's math performance activated participants' female social identity and hurt their math performance (i.e., stereotype threat) by reducing working memory. Moving beyond past work, it was also demonstrated that concomitantly presenting a positive self-relevant stereotype (e.g., college students are good at math) increased the relative accessibility of females' college student identity and inhibited their gender identity, eliminating attendant working memory deficits and contingent math performance decrements. Furthermore, subtle manipulations in questions presented in the demographic section of a math test eliminated stereotype threat effects that result from women reporting their gender before completing the test. This work identifies the motivated processes through which people's social identities became active in situations in which self-relevant stereotypes about a stigmatized group membership and a nonstigmatized group membership were available. In addition, it demonstrates the downstream consequences of this pattern of activation on working memory and performance.

  19. Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

    PubMed

    Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

    2014-06-11

    Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

  20. Addressable parallel cavity-based quantum memory

    NASA Astrophysics Data System (ADS)

    Vetlugin, Anton N.; Sokolov, Ivan V.

    2014-09-01

    We elaborate theoretically a model of addressable parallel cavity-based quantum memory for light able to store multiple transverse spatial modes of the input light signal of finite duration and, at the same time, a time sequence of the signals by side illumination. Having in mind possible applications for, e.g., quantum repeaters, we reveal the addressability of our memory, that is, its handiness for the read-out on demand of a given transverse quantized signal mode and of a given signal from the time sequence. The addressability is achieved by making use of different spatial configurations of pump wave during the write-in and the readout. We also demonstrate that for the signal durations of the order of few cavity decay times, better efficiency is achieved when one excites the cavity with zero light-matter coupling and finally performs fast excitation transfer from the intracavity field to the collective spin. On the other hand, the light-matter coupling control in time, based on dynamical impedance matching, allows to store and retrieve time restricted signals of the on-demand smooth time shape.

  1. Making working memory work: The effects of extended practice on focus capacity and the processes of updating, forward access, and random access

    PubMed Central

    Price, John M.; Colflesh, Gregory J. H.; Cerella, John; Verhaeghen, Paul

    2014-01-01

    We investigated the effects of 10 hours of practice on variations of the N-Back task to investigate the processes underlying possible expansion of the focus of attention within working memory. Using subtractive logic, we showed that random access (i.e., Sternberg-like search) yielded a modest effect (a 50% increase in speed) whereas the processes of forward access (i.e., retrieval in order, as in a standard N-Back task) and updating (i.e., changing the contents of working memory) were executed about 5 times faster after extended practice. We additionally found that extended practice increased working memory capacity as measured by the size of the focus of attention for the forward-access task, but not for variations where probing was in random order. This suggests that working memory capacity may depend on the type of search process engaged, and that certain working-memory-related cognitive processes are more amenable to practice than others. PMID:24486803

  2. Response of the Ubiquitin-Proteasome System to Memory Retrieval After Extended-Access Cocaine or Saline Self-Administration.

    PubMed

    Werner, Craig T; Milovanovic, Mike; Christian, Daniel T; Loweth, Jessica A; Wolf, Marina E

    2015-12-01

    The ubiquitin-proteasome system (UPS) has been implicated in the retrieval-induced destabilization of cocaine- and fear-related memories in Pavlovian paradigms. However, nothing is known about its role in memory retrieval after self-administration of cocaine, an operant paradigm, or how the length of withdrawal from cocaine may influence retrieval mechanisms. Here, we examined UPS activity after an extended-access cocaine self-administration regimen that leads to withdrawal-dependent incubation of cue-induced cocaine craving. Controls self-administered saline. In initial experiments, memory retrieval was elicited via a cue-induced seeking/retrieval test on withdrawal day (WD) 50-60, when craving has incubated. We found that retrieval of cocaine- and saline-associated memories produced similar increases in polyubiquitinated proteins in the nucleus accumbens (NAc), compared with rats that did not undergo a seeking/retrieval test. Measures of proteasome catalytic activity confirmed similar activation of the UPS after retrieval of saline and cocaine memories. However, in a subsequent experiment in which testing was conducted on WD1, proteasome activity in the NAc was greater after retrieval of cocaine memory than saline memory. Analysis of other brain regions confirmed that effects of cocaine memory retrieval on proteasome activity, relative to saline memory retrieval, depend on withdrawal time. These results, combined with prior studies, suggest that the relationship between UPS activity and memory retrieval depends on training paradigm, brain region, and time elapsed between training and retrieval. The observation that mechanisms underlying cocaine memory retrieval change depending on the age of the memory has implications for development of memory destabilization therapies for cue-induced relapse in cocaine addicts.

  3. Oxide Defect Engineering Methods for Valence Change (VCM) Resistive Random Access Memories

    NASA Astrophysics Data System (ADS)

    Capulong, Jihan O.

    Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: 1) rapid thermal annealing (RTA) in Ar using different temperatures, and 2) doping using ion implantation under different dose levels. Metrology techniques such as x-ray diffractometry (XRD), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy were utilized to characterize the HfOx switching oxide, which provided insight on the material properties and oxygen vacancy concentration in the oxide that was used to explain the changes in the electrical properties of the ReRAM devices. The resulting impact on the resistive switching characteristics of the devices, such as the forming voltage, set and reset threshold voltages, ON and OFF resistances, resistance ratio, and switching dispersion or uniformity were explored and summarized. Annealing in Ar showed significant impact on the forming voltage, with as much as 45% (from 22V to 12 V) of improvement, as the annealing temperature was increased. However, drawbacks of a higher oxide leakage and worse switching uniformity were seen with increasing annealing temperature. Meanwhile, doping the oxide by ion implantation showed significant effects on the resistive switching characteristics. Ta doping modulated the following switching properties with increasing dose: a) the reduction of the forming voltage, and Vset

  4. Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

    NASA Astrophysics Data System (ADS)

    Xiao, Yao; Guo, Hong-Xia; Zhang, Feng-Qi; Zhao, Wen; Wang, Yan-Ping; Zhang, Ke-Ying; Ding, Li-Li; Fan, Xue; Luo, Yin-Hong; Wang, Yuan-Ming

    2014-11-01

    Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

  5. Novel Circuitry Configuration with Paired-Cell Erase Operation for High-Density 90-nm Embedded Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Sato, Yoshihiro; Tsunoda, Koji; Aoki, Masaki; Sugiyama, Yoshihiro

    2009-04-01

    We propose a novel circuitry configuration for high-density 90-nm embedded resistive random access memory (ReRAM). The memory cells are operated at 2 V, and a small memory cell size of 6F2 consisting of a 1.2-V standard transistor and a resistive junction (1T-1R) is designed, where F is the feature size. The unique circuitry configuration is that each pair of source-lines connects to each source-line selective gate. Therefore, erasing is done by a pair of cells in turn in the whole sector, while the reading or programming is done by a random accessing operation. We simulated the ReRAM circuit for read and write operations with SPICE. As a result, we found that 5-ns high-speed read access was obtained in the 256-word lines (WLs) × 256-bit lines (BLs) and that the SET/RESET operation was stable.

  6. The Working Memory Rating Scale: A Classroom-Based Behavioral Assessment of Working Memory

    ERIC Educational Resources Information Center

    Alloway, Tracy Packiam; Gathercole, Susan Elizabeth; Kirkwood, Hannah; Elliott, Julian

    2009-01-01

    The aim of the present study was to investigate the potential of the Working Memory Rating Scale (WMRS), an observer-based rating scale that reflects behavioral difficulties of children with poor working memory. The findings indicate good internal reliability and adequate psychometric properties for use as a screening tool by teachers. Higher…

  7. Situation-Based Access Control: privacy management via modeling of patient data access scenarios.

    PubMed

    Peleg, Mor; Beimel, Dizza; Dori, Dov; Denekamp, Yaron

    2008-12-01

    Access control is a central problem in privacy management. A common practice in controlling access to sensitive data, such as electronic health records (EHRs), is Role-Based Access Control (RBAC). RBAC is limited as it does not account for the circumstances under which access to sensitive data is requested. Following a qualitative study that elicited access scenarios, we used Object-Process Methodology to structure the scenarios and conceive a Situation-Based Access Control (SitBAC) model. SitBAC is a conceptual model, which defines scenarios where patient's data access is permitted or denied. The main concept underlying this model is the Situation Schema, which is a pattern consisting of the entities Data-Requestor, Patient, EHR, Access Task, Legal-Authorization, and Response, along with their properties and relations. The various data access scenarios are expressed via Situation Instances. While we focus on the medical domain, the model is generic and can be adapted to other domains.

  8. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

    2014-04-01

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  9. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih; Sze, Simon M.

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  10. Lignin-Based Triple Shape Memory Polymers.

    PubMed

    Sivasankarapillai, Gopakumar; Li, Hui; McDonald, Armando G

    2015-09-14

    Lignin-based triple shape memory polymers comprised of both permanent covalent cross-links and physical cross-links have been synthesized. A mixing phase with poly(ester-amine) and poly(ester-amide) network having two distinct glass transitions was hot mixed with more structurally homogenized methanol soluble lignin fraction by one-pot, two-step method. Triple shape properties arise from the combined effect of the glass transition of polyester copolymers and lignin and the dissociation of self-complementary hydrogen bonding and cross-link density. The percentage of recovery in each stage was investigated and it was proved that the first recovery is related with lignin-poly(ester-amine) rich network and the second recovery stage is related with lignin-poly(ester-amide) rich network. The thermal and mechanical properties of the lignin-copolymer networks were also investigated using differential scanning calorimetry and dynamic mechanical analysis.

  11. Neural bases of orthographic long-term memory and working memory in dysgraphia.

    PubMed

    Rapp, Brenda; Purcell, Jeremy; Hillis, Argye E; Capasso, Rita; Miceli, Gabriele

    2016-02-01

    Spelling a word involves the retrieval of information about the word's letters and their order from long-term memory as well as the maintenance and processing of this information by working memory in preparation for serial production by the motor system. While it is known that brain lesions may selectively affect orthographic long-term memory and working memory processes, relatively little is known about the neurotopographic distribution of the substrates that support these cognitive processes, or the lesions that give rise to the distinct forms of dysgraphia that affect these cognitive processes. To examine these issues, this study uses a voxel-based mapping approach to analyse the lesion distribution of 27 individuals with dysgraphia subsequent to stroke, who were identified on the basis of their behavioural profiles alone, as suffering from deficits only affecting either orthographic long-term or working memory, as well as six other individuals with deficits affecting both sets of processes. The findings provide, for the first time, clear evidence of substrates that selectively support orthographic long-term and working memory processes, with orthographic long-term memory deficits centred in either the left posterior inferior frontal region or left ventral temporal cortex, and orthographic working memory deficits primarily arising from lesions of the left parietal cortex centred on the intraparietal sulcus. These findings also contribute to our understanding of the relationship between the neural instantiation of written language processes and spoken language, working memory and other cognitive skills.

  12. Neural bases of orthographic long-term memory and working memory in dysgraphia.

    PubMed

    Rapp, Brenda; Purcell, Jeremy; Hillis, Argye E; Capasso, Rita; Miceli, Gabriele

    2016-02-01

    Spelling a word involves the retrieval of information about the word's letters and their order from long-term memory as well as the maintenance and processing of this information by working memory in preparation for serial production by the motor system. While it is known that brain lesions may selectively affect orthographic long-term memory and working memory processes, relatively little is known about the neurotopographic distribution of the substrates that support these cognitive processes, or the lesions that give rise to the distinct forms of dysgraphia that affect these cognitive processes. To examine these issues, this study uses a voxel-based mapping approach to analyse the lesion distribution of 27 individuals with dysgraphia subsequent to stroke, who were identified on the basis of their behavioural profiles alone, as suffering from deficits only affecting either orthographic long-term or working memory, as well as six other individuals with deficits affecting both sets of processes. The findings provide, for the first time, clear evidence of substrates that selectively support orthographic long-term and working memory processes, with orthographic long-term memory deficits centred in either the left posterior inferior frontal region or left ventral temporal cortex, and orthographic working memory deficits primarily arising from lesions of the left parietal cortex centred on the intraparietal sulcus. These findings also contribute to our understanding of the relationship between the neural instantiation of written language processes and spoken language, working memory and other cognitive skills. PMID:26685156

  13. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    SciTech Connect

    Fang, Runchen; Yu, Shimeng; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh

    2014-05-05

    The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

  14. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  15. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    NASA Astrophysics Data System (ADS)

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-01

    A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  16. Precessional reversal in orthogonal spin transfer magnetic random access memory devices

    NASA Astrophysics Data System (ADS)

    Liu, H.; Bedau, D.; Backes, D.; Katine, J. A.; Kent, A. D.

    2012-07-01

    Single-shot time-resolved resistance measurements have been used to determine the magnetization reversal mechanisms of orthogonal spin transfer magnetic random access memory (OST-MRAM) devices at nanosecond time scales. There is a strong asymmetry between antiparallel (AP) to parallel (P) and P to AP transitions under the same pulse conditions. P to AP transitions are shown to occur by precession of the free layer magnetization, while the AP to P transition is typically direct, occurring in less than 200 ps. We associate the asymmetry with spin torques perpendicular to the plane of the free layer, an important characteristic of OST-MRAM bit cells that can be used to optimize device performance.

  17. Manufacturable High-Density 8 Mbit One Transistor-One Capacitor Embedded Ferroelectric Random Access Memory

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.; Moise, T. S.; Summerfelt, S. R.; Boku, K.; Remack, K.; Rodriguez, J.; Arendt, M.; Shinn, G.; Eliason, J.; Bailey, R.; Staubs, P.

    2008-04-01

    Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor-one capacitor (1T-1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm, 5 lm Cu/fluorosilicate glass (FSG) interconnect complementary metal oxide semiconductor (CMOS) logic process, are described. Higher signal margins are further enabled by the single-bit substitution methodology that replaces bits at the low-end of the original distribution with redundant elements. Retention tests on wafers with signal margins above a threshold value for screen show no bit fails for bakes extending up to 1000 h, suggesting retention lifetimes of more than 10 years at 85 °C. Using the qualified process reported in this paper, commercial products are being routinely produced in our fabrication facilities.

  18. False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

    NASA Astrophysics Data System (ADS)

    Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

    2013-04-01

    Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

  19. Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

    NASA Astrophysics Data System (ADS)

    Ta, Thi Kieu Hanh; Pham, Kim Ngoc; Dao, Thi Bang Tam; Tran, Dai Lam; Phan, Bach Thang

    2016-05-01

    The electrical conduction and associated resistance switching mechanism of top electrode/WO3/bottom electrode devices [top electrode (TE): Ag, Ti; bottom electrode (BE): Pt, fluorine-doped tin oxide] have been investigated. The direction of switching and switching ability depended on both the top and bottom electrode material. Multiple electrical conduction mechanisms control the leakage current of such switching devices, including trap-controlled space-charge, ballistic, Ohmic, and Fowler-Nordheim tunneling effects. The transition between electrical conduction states is also linked to the switching (SET-RESET) process. This is the first report of ballistic conduction in research into resistive random-access memory. The associated resistive switching mechanisms are also discussed.

  20. Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

    PubMed Central

    Xu, Zedong; Yu, Lina; Wu, Yong; Dong, Chang; Deng, Ning; Xu, Xiaoguang; Miao, J.; Jiang, Yong

    2015-01-01

    A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices. PMID:25982101

  1. Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles.

    PubMed

    Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2016-08-21

    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process. PMID:27456192

  2. Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

    NASA Astrophysics Data System (ADS)

    Xu, Zedong; Yu, Lina; Wu, Yong; Dong, Chang; Deng, Ning; Xu, Xiaoguang; Miao, J.; Jiang, Yong

    2015-05-01

    A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices.

  3. Detection mechanisms employing single event upsets in dynamic random access memories used as radiation sensors

    NASA Astrophysics Data System (ADS)

    Darambara, D. G.; Spyrou, N. M.

    1994-12-01

    A hardware system is being designed and constructed for the detection of neutrons, with a view to using it in neutron imaging and elemental analysis. A feasibility study was initially carried out to demonstrate that dynamic Random Access Memories (dRAMs) can be used as heavy charged particle detectors and furthermore be made sensitive to neutrons. We are interested, however, in constructing a detector that will be position sensitive, and hence carried out experiments to investigate the relative sensitivity of specific elements within the dRAM chips. The findings from these initial system tests highlight the usefulness of such a device as a position sensitive radiation detector. This paper aims to explain and give a review of most aspects concerning the soft error (SE) performance using dRAM as a radiation sensor.

  4. Electrical Characterization of the RCA CDP1822SD Random Access Memory, Volume 1, Appendix a

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    Electrical characteristization tests were performed on 35 RCA CDP1822SD, 256-by-4-bit, CMOS, random access memories. The tests included three functional tests, AC and DC parametric tests, a series of schmoo plots, rise/fall time screening, and a data retention test. All tests were performed on an automated IC test system with temperatures controlled by a thermal airstream unit. All the functional tests, the data retention test, and the AC and DC parametric tests were performed at ambient temperatures of 25 C, -20 C, -55 C, 85 C, and 125 C. The schmoo plots were performed at ambient temperatures of 25 C, -55 C, and 125 C. The data retention test was performed at 25 C. Five devices failed one or more functional tests and four of these devices failed to meet the expected limits of a number of AC parametric tests. Some of the schmoo plots indicated a small degree of interaction between parameters.

  5. Does the mismatch negativity operate on a consciously accessible memory trace?

    PubMed

    Dykstra, Andrew R; Gutschalk, Alexander

    2015-11-01

    The extent to which the contents of short-term memory are consciously accessible is a fundamental question of cognitive science. In audition, short-term memory is often studied via the mismatch negativity (MMN), a change-related component of the auditory evoked response that is elicited by violations of otherwise regular stimulus sequences. The prevailing functional view of the MMN is that it operates on preattentive and even preconscious stimulus representations. We directly examined the preconscious notion of the MMN using informational masking and magnetoencephalography. Spectrally isolated and otherwise suprathreshold auditory oddball sequences were occasionally random rendered inaudible by embedding them in random multitone masker "clouds." Despite identical stimulation/task contexts and a clear representation of all stimuli in auditory cortex, MMN was only observed when the preceding regularity (that is, the standard stream) was consciously perceived. The results call into question the preconscious interpretation of MMN and raise the possibility that it might index partial awareness in the absence of overt behavior.

  6. Does the mismatch negativity operate on a consciously accessible memory trace?

    PubMed Central

    Dykstra, Andrew R.; Gutschalk, Alexander

    2015-01-01

    The extent to which the contents of short-term memory are consciously accessible is a fundamental question of cognitive science. In audition, short-term memory is often studied via the mismatch negativity (MMN), a change-related component of the auditory evoked response that is elicited by violations of otherwise regular stimulus sequences. The prevailing functional view of the MMN is that it operates on preattentive and even preconscious stimulus representations. We directly examined the preconscious notion of the MMN using informational masking and magnetoencephalography. Spectrally isolated and otherwise suprathreshold auditory oddball sequences were occasionally random rendered inaudible by embedding them in random multitone masker “clouds.” Despite identical stimulation/task contexts and a clear representation of all stimuli in auditory cortex, MMN was only observed when the preceding regularity (that is, the standard stream) was consciously perceived. The results call into question the preconscious interpretation of MMN and raise the possibility that it might index partial awareness in the absence of overt behavior. PMID:26702432

  7. Multiresponsive Shape Memory Blends and Nanocomposites Based on Starch.

    PubMed

    Sessini, Valentina; Raquez, Jean-Marie; Lo Re, Giada; Mincheva, Rosica; Kenny, José Maria; Dubois, Philippe; Peponi, Laura

    2016-08-01

    Smart multiresponsive bionanocomposites with both humidity- and thermally activated shape-memory effects, based on blends of ethylene-vinyl acetate (EVA) and thermoplastic starch (TPS) are designed. Thermo- and humidity-mechanical cyclic experiments are performed in order to demonstrate the humidity- as well as thermally activated shape memory properties of the starch-based materials. In particular, the induced-crystallization is used in order to thermally activate the EVA shape memory response. The shape memory results of both blends and their nanocomposites reflect the excellent ability to both humidity- and thermally activated recover of the initial shape with values higher than 80 and 90%, respectively. PMID:27434018

  8. Two Unipolar Terminal-Attractor-Based Associative Memories

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang; Wu, Chwan-Hwa

    1995-01-01

    Two unipolar mathematical models of electronic neural network functioning as terminal-attractor-based associative memory (TABAM) developed. Models comprise sets of equations describing interactions between time-varying inputs and outputs of neural-network memory, regarded as dynamical system. Simplifies design and operation of optoelectronic processor to implement TABAM performing associative recall of images. TABAM concept described in "Optoelectronic Terminal-Attractor-Based Associative Memory" (NPO-18790). Experimental optoelectronic apparatus that performed associative recall of binary images described in "Optoelectronic Inner-Product Neural Associative Memory" (NPO-18491).

  9. Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

    NASA Astrophysics Data System (ADS)

    Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2016-08-01

    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02602h

  10. Context controls access to working and reference memory in the pigeon (Columba livia).

    PubMed

    Roberts, William A; Macpherson, Krista; Strang, Caroline

    2016-01-01

    The interaction between working and reference memory systems was examined under conditions in which salient contextual cues were presented during memory retrieval. Ambient colored lights (red or green) bathed the operant chamber during the presentation of comparison stimuli in delayed matching-to-sample training (working memory) and during the presentation of the comparison stimuli as S+ and S- cues in discrimination training (reference memory). Strong competition between memory systems appeared when the same contextual cue appeared during working and reference memory training. When different contextual cues were used, however, working memory was completely protected from reference memory interference.

  11. Neural network based feed-forward high density associative memory

    NASA Technical Reports Server (NTRS)

    Daud, T.; Moopenn, A.; Lamb, J. L.; Ramesham, R.; Thakoor, A. P.

    1987-01-01

    A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

  12. Memory

    MedlinePlus

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  13. Memory detection 2.0: the first web-based memory detection test.

    PubMed

    Kleinberg, Bennett; Verschuere, Bruno

    2015-01-01

    There is accumulating evidence that reaction times (RTs) can be used to detect recognition of critical (e.g., crime) information. A limitation of this research base is its reliance upon small samples (average n = 24), and indications of publication bias. To advance RT-based memory detection, we report upon the development of the first web-based memory detection test. Participants in this research (Study1: n = 255; Study2: n = 262) tried to hide 2 high salient (birthday, country of origin) and 2 low salient (favourite colour, favourite animal) autobiographical details. RTs allowed to detect concealed autobiographical information, and this, as predicted, more successfully so than error rates, and for high salient than for low salient items. While much remains to be learned, memory detection 2.0 seems to offer an interesting new platform to efficiently and validly conduct RT-based memory detection research.

  14. Memory detection 2.0: the first web-based memory detection test.

    PubMed

    Kleinberg, Bennett; Verschuere, Bruno

    2015-01-01

    There is accumulating evidence that reaction times (RTs) can be used to detect recognition of critical (e.g., crime) information. A limitation of this research base is its reliance upon small samples (average n = 24), and indications of publication bias. To advance RT-based memory detection, we report upon the development of the first web-based memory detection test. Participants in this research (Study1: n = 255; Study2: n = 262) tried to hide 2 high salient (birthday, country of origin) and 2 low salient (favourite colour, favourite animal) autobiographical details. RTs allowed to detect concealed autobiographical information, and this, as predicted, more successfully so than error rates, and for high salient than for low salient items. While much remains to be learned, memory detection 2.0 seems to offer an interesting new platform to efficiently and validly conduct RT-based memory detection research. PMID:25874966

  15. Memory Detection 2.0: The First Web-Based Memory Detection Test

    PubMed Central

    Kleinberg, Bennett; Verschuere, Bruno

    2015-01-01

    There is accumulating evidence that reaction times (RTs) can be used to detect recognition of critical (e.g., crime) information. A limitation of this research base is its reliance upon small samples (average n = 24), and indications of publication bias. To advance RT-based memory detection, we report upon the development of the first web-based memory detection test. Participants in this research (Study1: n = 255; Study2: n = 262) tried to hide 2 high salient (birthday, country of origin) and 2 low salient (favourite colour, favourite animal) autobiographical details. RTs allowed to detect concealed autobiographical information, and this, as predicted, more successfully so than error rates, and for high salient than for low salient items. While much remains to be learned, memory detection 2.0 seems to offer an interesting new platform to efficiently and validly conduct RT-based memory detection research. PMID:25874966

  16. The neurobiology of memory based predictions.

    PubMed

    Eichenbaum, Howard; Fortin, Norbert J

    2009-05-12

    Recent findings indicate that, in humans, the hippocampal memory system is involved in the capacity to imagine the future as well as remember the past. Other studies have suggested that animals may also have the capacity to recall the past and plan for the future. Here, we will consider data that bridge between these sets of findings by assessing the role of the hippocampus in memory and prediction in rats. We will argue that animals have the capacity for recollection and that the hippocampus plays a central and selective role in binding information in the service of recollective memory. Then we will consider examples of transitive inference, a paradigm that requires the integration of overlapping memories and flexible use of the resulting relational memory networks for generating predictions in novel situations. Our data show that animals have the capacity for transitive inference and that the hippocampus plays a central role in the ability to predict outcomes of events that have not yet occurred.

  17. Frontal activations associated with accessing and evaluating information in working memory: an fMRI study.

    PubMed

    Zhang, John X; Leung, Hoi-Chung; Johnson, Marcia K

    2003-11-01

    To investigate the involvement of frontal cortex in accessing and evaluating information in working memory, we used a variant of a Sternberg paradigm and compared brain activations between positive and negative responses (known to differentially tax access/evaluation processes). Participants remembered two trigrams in each trial and were then cued to discard one of them and maintain the other one as the target set. After a delay, a probe letter was presented and participants made decisions about whether or not it was in the target set. Several frontal areas--anterior cingulate (BA32), middle frontal gyrus (bilateral BA9, right BA10, and right BA46), and left inferior frontal gyrus (BA44/45)--showed increased activity when participants made correct negative responses relative to when they made correct positive responses. No areas activated significantly more for the positive responses than for the negative responses. It is suggested that the multiple frontal areas involved in the test phase of this task may reflect several component processes that underlie more general frontal functions. PMID:14642465

  18. Frontal activations associated with accessing and evaluating information in working memory: an fMRI study.

    PubMed

    Zhang, John X; Leung, Hoi-Chung; Johnson, Marcia K

    2003-11-01

    To investigate the involvement of frontal cortex in accessing and evaluating information in working memory, we used a variant of a Sternberg paradigm and compared brain activations between positive and negative responses (known to differentially tax access/evaluation processes). Participants remembered two trigrams in each trial and were then cued to discard one of them and maintain the other one as the target set. After a delay, a probe letter was presented and participants made decisions about whether or not it was in the target set. Several frontal areas--anterior cingulate (BA32), middle frontal gyrus (bilateral BA9, right BA10, and right BA46), and left inferior frontal gyrus (BA44/45)--showed increased activity when participants made correct negative responses relative to when they made correct positive responses. No areas activated significantly more for the positive responses than for the negative responses. It is suggested that the multiple frontal areas involved in the test phase of this task may reflect several component processes that underlie more general frontal functions.

  19. Context-Based E-Health System Access Control Mechanism

    NASA Astrophysics Data System (ADS)

    Al-Neyadi, Fahed; Abawajy, Jemal H.

    E-Health systems logically demand a sufficiently fine-grained authorization policy for access control. The access to medical information should not be just role-based but should also include the contextual condition of the role to access data. In this paper, we present a mechanism to extend the standard role-based access control to incorporate contextual information for making access control decisions in e-health application. We present an architecture consisting of authorisation and context infrastructure that work cooperatively to grant access rights based on context-aware authorization policies and context information.

  20. Three-Year-Old Children Can Access Their Own Memory to Guide Responses on a Visual Matching Task

    ERIC Educational Resources Information Center

    Balcomb, Frances K.; Gerken, LouAnn

    2008-01-01

    Many models of learning rely on accessing internal knowledge states. Yet, although infants and young children are recognized to be proficient learners, the ability to act on metacognitive information is not thought to develop until early school years. In the experiments reported here, 3.5-year-olds demonstrated memory-monitoring skills by…

  1. Concurrency and Time in Role-Based Access Control

    NASA Astrophysics Data System (ADS)

    Chiang, Chia-Chu; Bayrak, Coskun

    Role-based access control (RBAC) has been proposed as an alternative solution for expressing access control policies. The generalized temporal RBAC (GTRBAC) extends RBAC by adding time in order to support timed based access control policies. However, GTRBAC does not address certain issues of concurrency such as, synchronization. We propose an approach to the expressions of time and concurrency in RBAC based on timed Petri nets. A formal verification method for access control policies is also proposed.

  2. Multi-layer graphene membrane based memory cell

    NASA Astrophysics Data System (ADS)

    Siahlo, Andrei I.; Popov, Andrey M.; Poklonski, Nikolai A.; Lozovik, Yurii E.; Vyrko, Sergey A.; Ratkevich, Sergey V.

    2016-10-01

    The scheme and operational principles of the nanoelectromechanical memory cell based on the bending of a multi-layer graphene membrane by the electrostatic force are proposed. An analysis of the memory cell total energy as a function of the memory cell sizes is used to determine the sizes corresponding to a bistable memory cell with the conducting ON and non-conducting OFF states and to calculate the switching voltage between the OFF and ON states. It is shown that a potential barrier between the OFF and ON states is huge for practically all sizes of a bistable memory cell which excludes spontaneous switching and allows the proposed memory cell to be used for long-term archival storage.

  3. UMLS-based access to CPR data.

    PubMed

    van Mulligen, E M

    1998-01-01

    This paper describes the results of a project that explores the use the Unified Medical Language System (UMLS) for knowledge-driven tasks, such as browsing a computer-based patient record (CPR). The project consisted of a number of steps: the mapping between CPR terms and UMLS concepts, the development of an algorithm that explores the CPR data using this mapping, and the implementation of a first prototype browser that visualizes "found" data. A second task addressed in this project has been the direct access to online medical literature (MEDLINE) using the UMLS concepts found in the CPR data. In this project, we used a preliminary version of the Open Records for Patient Care (ORCA) CPR that consisted only of the history and physical examination data of patient suffering from heart failure. PMID:10384441

  4. Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture

    NASA Astrophysics Data System (ADS)

    Kim, Min-Hoi; Lee, Gyu Jeong; Keum, Chang-Min; Lee, Sin-Doo

    2014-02-01

    We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on-off ratio and the high switching on-off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM.

  5. A Memory-Based Model of Hick's Law

    ERIC Educational Resources Information Center

    Schneider, Darryl W.; Anderson, John R.

    2011-01-01

    We propose and evaluate a memory-based model of Hick's law, the approximately linear increase in choice reaction time with the logarithm of set size (the number of stimulus-response alternatives). According to the model, Hick's law reflects a combination of associative interference during retrieval from declarative memory and occasional savings…

  6. A Memory-Based Theory of Verbal Cognition

    ERIC Educational Resources Information Center

    Dennis, Simon

    2005-01-01

    The syntagmatic paradigmatic model is a distributed, memory-based account of verbal processing. Built on a Bayesian interpretation of string edit theory, it characterizes the control of verbal cognition as the retrieval of sets of syntagmatic and paradigmatic constraints from sequential and relational long-term memory and the resolution of these…

  7. Memory.

    ERIC Educational Resources Information Center

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  8. Toward Practical Solid-State Based Quantum Memories

    NASA Astrophysics Data System (ADS)

    Heshami, Khabat

    Quantum information processing promises to have transformative impacts on information and communication science and technology. Photonic implementation of quantum information processing is among successful candidates for implementation of quantum computation and is an essential part of quantum communication. Linear optical quantum computation, specifically the KLM scheme [1], and quantum repeaters [2, 3] are prominent candidates for practical photonic quantum computation and long-distance quantum communication. Quantum memories for photons are key elements for any practical implementation of these schemes. Practical quantum memories require theoretical and experimental investigations into quantum memory protocols and physical systems for implementations. The present thesis is focused on studying new approaches toward practical solid-state based quantum memories. First, I present a proposal for a new quantum memory protocol called the controllable-dipole quantum memory [4]. It represents a protocol, in a two-level system, without any optical control that is shown to be equivalent to the Raman type-quantum memory. Then I include our studies on the quantum memory based on the refractive index modulation of the host medium [5]. It is shown that it can resemble the gradient echo quantum memory without a spatial gradient in the external field. These two protocols can be implemented in rare-earth doped crystals. With regards to using new physical systems, I present a proposal based on nitrogen vacancy centers [6]. This may pave the way toward micron-scale on-chip quantum memories that may contribute to the implementation of integrated quantum photonics. Finally, I studied the precision requirements for the spin echo technique [7]. This technique is necessary to extend the storage time in solid-state quantum memories, in which the coherence times are limited by spin inhomogeneous broadening.

  9. Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

    NASA Astrophysics Data System (ADS)

    Natarajarathinam, Anusha

    Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

  10. Modeling mandatory access control in role-based security systems

    SciTech Connect

    Nyanchama, M.; Osborn, S.

    1996-12-31

    This paper discusses the realization of mandatory access control in role-based protection systems. Starting from the basic definitions of roles, their application in security and the basics of the concept of mandatory access control, we develop a scheme of role-based protection that realizes mandatory access control. The basis of this formulation develops from the recognition that roles can be seen as facilitating access to some given information context. By handling each of the role contexts as independent security levels of information, we simulate mandatory access by imposing the requirements of mandatory access control. Among the key considerations, we propose a means of taming Trojan horses by imposing acyclic information flow among contexts in role-based protection systems. The acyclic information flows and suitable access rules incorporate secrecy which is an essential component of mandatory access control.

  11. Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

    SciTech Connect

    Tan, Chun Chia; Zhao, Rong Chong, Tow Chong; Shi, Luping

    2014-10-13

    Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change Random Access Memory (PCRAM). By tuning N-TiW's material properties through doping, the heater can be tailored to optimize the access speed and programming current of PCRAM. Experiments reveal that N-TiW's resistivity increases and thermal conductivity decreases with increasing nitrogen-doping ratio, and N-TiW devices displayed (∼33% to ∼55%) reduced programming currents. However, there is a tradeoff between the current and speed for heater-based PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could be optimized to enable low RESET currents and fast access speeds.

  12. Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation

    SciTech Connect

    Wang, Jer-Chyi Hsu, Chih-Hsien; Ye, Yu-Ren; Ai, Chi-Fong; Tsai, Wen-Fa

    2014-03-15

    Characteristics improvement of gadolinium oxide (Gd{sub x}O{sub y}) resistive random access memories (RRAMs) treated by hydrogen plasma immersion ion implantation (PIII) was investigated. With the hydrogen PIII treatment, the Gd{sub x}O{sub y} RRAMs exhibited low set/reset voltages and a high resistance ratio, which were attributed to the enhanced movement of oxygen ions within the Gd{sub x}O{sub y} films and the increased Schottky barrier height at Pt/Gd{sub x}O{sub y} interface, respectively. The resistive switching mechanism of Gd{sub x}O{sub y} RRAMs was dominated by Schottky emission, as proved by the area dependence of the resistance in the low resistance state. After the hydrogen PIII treatment, a retention time of more than 10{sup 4} s was achieved at an elevated measurement temperature. In addition, a stable cycling endurance with the resistance ratio of more than three orders of magnitude of the Gd{sub x}O{sub y} RRAMs can be obtained.

  13. Single-crystalline CuO nanowires for resistive random access memory applications

    SciTech Connect

    Hong, Yi-Siang; Chen, Jui-Yuan; Huang, Chun-Wei; Chiu, Chung-Hua; Huang, Yu-Ting; Huang, Ting Kai; He, Ruo Shiuan; Wu, Wen-Wei

    2015-04-27

    Recently, the mechanism of resistive random access memory (RRAM) has been partly clarified and determined to be controlled by the forming and erasing of conducting filaments (CF). However, the size of the CF may restrict the application and development as devices are scaled down. In this work, we synthesized CuO nanowires (NW) (∼150 nm in diameter) to fabricate a CuO NW RRAM nanodevice that was much smaller than the filament (∼2 μm) observed in a bulk CuO RRAM device in a previous study. HRTEM indicated that the Cu{sub 2}O phase was generated after operation, which demonstrated that the filament could be minimize to as small as 3.8 nm when the device is scaled down. In addition, energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) show the resistive switching of the dielectric layer resulted from the aggregated oxygen vacancies, which also match with the I-V fitting results. Those results not only verify the switching mechanism of CuO RRAM but also show RRAM has the potential to shrink in size, which will be beneficial to the practical application of RRAM devices.

  14. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 1

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    Electrical characterization and qualification tests were performed on the RCA MWS5001D, 1024 by 1-bit, CMOS, random access memory. Characterization tests were performed on five devices. The tests included functional tests, AC parametric worst case pattern selection test, determination of worst-case transition for setup and hold times and a series of schmoo plots. The qualification tests were performed on 32 devices and included a 2000 hour burn in with electrical tests performed at 0 hours and after 168, 1000, and 2000 hours of burn in. The tests performed included functional tests and AC and DC parametric tests. All of the tests in the characterization phase, with the exception of the worst-case transition test, were performed at ambient temperatures of 25, -55 and 125 C. The worst-case transition test was performed at 25 C. The preburn in electrical tests were performed at 25, -55, and 125 C. All burn in endpoint tests were performed at 25, -40, -55, 85, and 125 C.

  15. Molecular memory based on nanowire-molecular wire heterostructures.

    PubMed

    Li, Chao; Lei, Bo; Fan, Wendy; Zhang, Daihua; Meyyappan, M; Zhou, Chongwu

    2007-01-01

    This article reviews the recent research of molecular memory based on self-assembled nanowire-molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.

  16. Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode.

    PubMed

    Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

    2014-10-31

    Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 10(5) s with a memory margin of 9.2 × 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 × 10(5), and bending-fatigue-free cycles of ∼1 × 10(3) with a memory margin (I(on)/I(off)) of 3.3 × 10(5). PMID:25297517

  17. Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

    NASA Astrophysics Data System (ADS)

    Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

    2014-10-01

    Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 105 s with a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memory margin of 8.4 × 105, and bending-fatigue-free cycles of ˜1 × 103 with a memory margin (Ion/Ioff) of 3.3 × 105.

  18. Memory-based frame synchronizer. [for digital communication systems

    NASA Technical Reports Server (NTRS)

    Stattel, R. J.; Niswander, J. K. (Inventor)

    1981-01-01

    A frame synchronizer for use in digital communications systems wherein data formats can be easily and dynamically changed is described. The use of memory array elements provide increased flexibility in format selection and sync word selection in addition to real time reconfiguration ability. The frame synchronizer comprises a serial-to-parallel converter which converts a serial input data stream to a constantly changing parallel data output. This parallel data output is supplied to programmable sync word recognizers each consisting of a multiplexer and a random access memory (RAM). The multiplexer is connected to both the parallel data output and an address bus which may be connected to a microprocessor or computer for purposes of programming the sync word recognizer. The RAM is used as an associative memory or decorder and is programmed to identify a specific sync word. Additional programmable RAMs are used as counter decoders to define word bit length, frame word length, and paragraph frame length.

  19. Cryptographic Enforcement of Role-Based Access Control

    NASA Astrophysics Data System (ADS)

    Crampton, Jason

    Many cryptographic schemes have been designed to enforce information flow policies. However, enterprise security requirements are often better encoded, or can only be encoded, using role-based access control policies rather than information flow policies. In this paper, we provide an alternative formulation of role-based access control that enables us to apply existing cryptographic schemes to core and hierarchical role-based access control policies. We then show that special cases of our cryptographic enforcement schemes for role-based access control are equivalent to cryptographic enforcement schemes for temporal access control and to ciphertext-policy and key-policy attribute-based encryption schemes. Finally, we describe how these special cases can be extended to support richer forms of temporal access control and attribute-based encryption.

  20. Expedition Memory: Towards Agent-based Web Services for Creating and Using Mars Exploration Data.

    NASA Technical Reports Server (NTRS)

    Clancey, William J.; Sierhuis, Maarten; Briggs, Geoff; Sims, Mike

    2005-01-01

    Explorers ranging over kilometers of rugged, sometimes "feature-less" terrain for over a year could be overwhelmed by tracking and sharing what they have done and learned. An automated system based on the existing Mobile Agents design [ I ] and Mars Exploration Rover experience [2], could serve as an "expedition memory" that would be indexed by voice as wel1 as a web interface, linking people, places, activities, records (voice notes, photographs, samples). and a descriptive scientific ontology. This database would be accessible during EVAs by astronauts, annotated by the remote science team, linked to EVA plans, and allow cross indexing between sites and expeditions. We consider the basic problem, our philosophical approach, technical methods, and uses of the expedition memory for facilitating long-term collaboration between Mars crews and Earth support teams. We emphasize that a "memory" does not mean a database per se, but an interactive service that combines different resources, and ultimately could be like a helpful librarian.

  1. Attention, Working Memory, and Long-Term Memory in Multimedia Learning: An Integrated Perspective Based on Process Models of Working Memory

    ERIC Educational Resources Information Center

    Schweppe, Judith; Rummer, Ralf

    2014-01-01

    Cognitive models of multimedia learning such as the Cognitive Theory of Multimedia Learning (Mayer 2009) or the Cognitive Load Theory (Sweller 1999) are based on different cognitive models of working memory (e.g., Baddeley 1986) and long-term memory. The current paper describes a working memory model that has recently gained popularity in basic…

  2. Temperature induced complementary switching in titanium oxide resistive random access memory

    NASA Astrophysics Data System (ADS)

    Panda, D.; Simanjuntak, F. M.; Tseng, T.-Y.

    2016-07-01

    On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

  3. Recollection- and Familiarity-Based Decisions Reflect Memory Strength

    PubMed Central

    Wiesmann, Martin; Ishai, Alumit

    2008-01-01

    We used event-related fMRI to investigate whether recollection- and familiarity-based memory judgments are modulated by the degree of visual similarity between old and new art paintings. Subjects performed a flower detection task, followed by a Remember/Know/New surprise memory test. The old paintings were randomly presented with new paintings, which were either visually similar or visually different. Consistent with our prediction, subjects were significantly faster and more accurate to reject new, visually different paintings than new, visually similar ones. The proportion of false alarms, namely remember and know responses to new paintings, was significantly reduced with decreased visual similarity. The retrieval task evoked activation in multiple visual, parietal and prefrontal regions, within which remember judgments elicited stronger activation than know judgments. New, visually different paintings evoked weaker activation than new, visually similar items in the intraparietal sulcus. Contrasting recollection with familiarity revealed activation predominantly within the precuneus, where the BOLD response elicited by recollection peaked significantly earlier than the BOLD response evoked by familiarity judgments. These findings suggest that successful memory retrieval of pictures is mediated by activation in a distributed cortical network, where memory strength is manifested by differential hemodynamic profiles. Recollection- and familiarity-based memory decisions may therefore reflect strong memories and weak memories, respectively. PMID:18958245

  4. Encoding and retrieval processes involved in the access of source information in the absence of item memory.

    PubMed

    Ball, B Hunter; DeWitt, Michael R; Knight, Justin B; Hicks, Jason L

    2014-09-01

    The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were related to the target item but never actually studied. In Experiments 1 and 2, participants studied 1 category member (e.g., onion) from a variety of different categories and at test were presented with an unstudied category label (e.g., vegetable) to probe memory for item and source information. In Experiments 3 and 4, 1 member of unidirectional (e.g., credit or card) or bidirectional (e.g., salt or pepper) associates was studied, whereas the other unstudied member served as a test probe. When recall failed, source information was accessible only when items were processed deeply during encoding (Experiments 1 and 2) and when there was strong forward associative strength between the retrieval cue and target (Experiments 3 and 4). These findings suggest that a retrieval probe diagnostic of semantically related item information reinstantiates information bound in memory during encoding that results in reactivation of associated contextual information, contingent upon sufficient learning of the item itself and the association between the item and its context information.

  5. Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

    SciTech Connect

    Thomas, Luc Jan, Guenole; Le, Son; Wang, Po-Kang

    2015-04-20

    The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

  6. Detrimental effect of interfacial Dzyaloshinskii-Moriya interaction on perpendicular spin-transfer-torque magnetic random access memory

    SciTech Connect

    Jang, Peong-Hwa; Lee, Seo-Won E-mail: kj-lee@korea.ac.kr; Song, Kyungmi; Lee, Seung-Jae; Lee, Kyung-Jin E-mail: kj-lee@korea.ac.kr

    2015-11-16

    Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions. However, its effect on the performance of perpendicular spin transfer torque memory has not been explored yet. We show based on numerical studies that the interfacial Dzyaloshinskii-Moriya interaction decreases the thermal energy barrier while increases the switching current. As high thermal energy barrier as well as low switching current is required for the commercialization of spin torque memory, our results suggest that the interfacial Dzyaloshinskii-Moriya interaction should be minimized for spin torque memory applications.

  7. Evaluating OpenSHMEM Explicit Remote Memory Access Operations and Merged Requests

    SciTech Connect

    Boehm, Swen; Pophale, Swaroop S; Gorentla Venkata, Manjunath

    2016-01-01

    The OpenSHMEM Library Specification has evolved consid- erably since version 1.0. Recently, non-blocking implicit Remote Memory Access (RMA) operations were introduced in OpenSHMEM 1.3. These provide a way to achieve better overlap between communication and computation. However, the implicit non-blocking operations do not pro- vide a separate handle to track and complete the individual RMA opera- tions. They are guaranteed to be completed after either a shmem quiet(), shmem barrier() or a shmem barrier all() is called. These are global com- pletion and synchronization operations. Though this semantic is expected to achieve a higher message rate for the applications, the drawback is that it does not allow fine-grained control over the completion of RMA operations. In this paper, first, we introduce non-blocking RMA operations with requests, where each operation has an explicit request to track and com- plete the operation. Second, we introduce interfaces to merge multiple requests into a single request handle. The merged request tracks multiple user-selected RMA operations, which provides the flexibility of tracking related communication operations with one request handle. Lastly, we explore the implications in terms of performance, productivity, usability and the possibility of defining different patterns of communication via merging of requests. Our experimental results show that a well designed and implemented OpenSHMEM stack can hide the overhead of allocating and managing the requests. The latency of RMA operations with requests is similar to blocking and implicit non-blocking RMA operations. We test our implementation with the Scalable Synthetic Compact Applications (SSCA #1) benchmark and observe that using RMA operations with requests and merging of these requests outperform the implementation using blocking RMA operations and implicit non-blocking operations by 49% and 74% respectively.

  8. Memory-Based Decision-Making with Heuristics: Evidence for a Controlled Activation of Memory Representations

    ERIC Educational Resources Information Center

    Khader, Patrick H.; Pachur, Thorsten; Meier, Stefanie; Bien, Siegfried; Jost, Kerstin; Rosler, Frank

    2011-01-01

    Many of our daily decisions are memory based, that is, the attribute information about the decision alternatives has to be recalled. Behavioral studies suggest that for such decisions we often use simple strategies (heuristics) that rely on controlled and limited information search. It is assumed that these heuristics simplify decision-making by…

  9. Orbitofrontal cortex encodes memories within value-based schemas and represents contexts that guide memory retrieval.

    PubMed

    Farovik, Anja; Place, Ryan J; McKenzie, Sam; Porter, Blake; Munro, Catherine E; Eichenbaum, Howard

    2015-05-27

    There are a substantial number of studies showing that the orbitofrontal cortex links events to reward values, whereas the hippocampus links events to the context in which they occur. Here we asked how the orbitofrontal cortex contributes to memory where context determines the reward values associated with events. After rats learned object-reward associations that differed depending on the spatial context in which the objects were presented, neuronal ensembles in orbitofrontal cortex represented distinct value-based schemas, each composed of a systematic organization of the representations of objects in the contexts and positions where they were associated with reward or nonreward. Orbitofrontal ensembles also represent the different spatial contexts that define the mappings of stimuli to actions that lead to reward or nonreward. These findings, combined with observations on complementary memory representation within the hippocampus, suggest mechanisms through which prefrontal cortex and the hippocampus interact in support of context-guided memory.

  10. Orbitofrontal Cortex Encodes Memories within Value-Based Schemas and Represents Contexts That Guide Memory Retrieval

    PubMed Central

    Farovik, Anja; Place, Ryan J.; McKenzie, Sam; Porter, Blake; Munro, Catherine E.

    2015-01-01

    There are a substantial number of studies showing that the orbitofrontal cortex links events to reward values, whereas the hippocampus links events to the context in which they occur. Here we asked how the orbitofrontal cortex contributes to memory where context determines the reward values associated with events. After rats learned object–reward associations that differed depending on the spatial context in which the objects were presented, neuronal ensembles in orbitofrontal cortex represented distinct value-based schemas, each composed of a systematic organization of the representations of objects in the contexts and positions where they were associated with reward or nonreward. Orbitofrontal ensembles also represent the different spatial contexts that define the mappings of stimuli to actions that lead to reward or nonreward. These findings, combined with observations on complementary memory representation within the hippocampus, suggest mechanisms through which prefrontal cortex and the hippocampus interact in support of context-guided memory. PMID:26019346

  11. Organizational Factors in Human Memory: Implications for Library Organization and Access Systems.

    ERIC Educational Resources Information Center

    Najarian, Suzanne E.

    1981-01-01

    Examines psychological studies on memory and learning for what they reveal about human categorizing processes and the organizing principles and limitations of human memory. Findings suggest considerations for the design of information systems that would take conceptual organization of knowledge into account. (FM)

  12. Contexts and Control Operations Used in Accessing List-Specific, Generalized, and Semantic Memories

    ERIC Educational Resources Information Center

    Humphreys, Michael S.; Murray, Krista L.; Maguire, Angela M.

    2009-01-01

    The human ability to focus memory retrieval operations on a particular list, episode or memory structure has not been fully appreciated or documented. In Experiment 1-3, we make it increasingly difficult for participants to switch between a less recent list (multiple study opportunities), and a more recent list (single study opportunity). Task…

  13. Retrieval practice enhances the accessibility but not the quality of memory.

    PubMed

    Sutterer, David W; Awh, Edward

    2016-06-01

    Numerous studies have demonstrated that retrieval from long-term memory (LTM) can enhance subsequent memory performance, a phenomenon labeled the retrieval practice effect. However, the almost exclusive reliance on categorical stimuli in this literature leaves open a basic question about the nature of this improvement in memory performance. It has not yet been determined whether retrieval practice improves the probability of successful memory retrieval or the quality of the retrieved representation. To answer this question, we conducted three experiments using a mixture modeling approach (Zhang & Luck, 2008) that provides a measure of both the probability of recall and the quality of the recalled memories. Subjects attempted to memorize the color of 400 unique shapes. After every 10 images were presented, subjects either recalled the last 10 colors (the retrieval practice condition) by clicking on a color wheel with each shape as a retrieval cue or they participated in a control condition that involved no further presentations (Experiment 1) or restudy of the 10 shape/color associations (Experiments 2 and 3). Performance in a subsequent delayed recall test revealed a robust retrieval practice effect. Subjects recalled a significantly higher proportion of items that they had previously retrieved relative to items that were untested or that they had restudied. Interestingly, retrieval practice did not elicit any improvement in the precision of the retrieved memories. The same empirical pattern also was observed following delays of greater than 24 hours. Thus, retrieval practice increases the probability of successful memory retrieval but does not improve memory quality.

  14. Speed and Accuracy of Accessing Information in Working Memory: An Individual Differences Investigation of Focus Switching

    ERIC Educational Resources Information Center

    Unsworth, Nash; Engle, Randall W.

    2008-01-01

    Three experiments examined the nature of individual differences in switching the focus of attention in working memory. Participants performed 3 versions of a continuous counting task that required successive updating and switching between counts. Across all 3 experiments, individual differences in working memory span and fluid intelligence were…

  15. A wavelet based investigation of long memory in stock returns

    NASA Astrophysics Data System (ADS)

    Tan, Pei P.; Galagedera, Don U. A.; Maharaj, Elizabeth A.

    2012-04-01

    Using a wavelet-based maximum likelihood fractional integration estimator, we test long memory (return predictability) in the returns at the market, industry and firm level. In an analysis of emerging market daily returns over the full sample period, we find that long-memory is not present and in approximately twenty percent of 175 stocks there is evidence of long memory. The absence of long memory in the market returns may be a consequence of contemporaneous aggregation of stock returns. However, when the analysis is carried out with rolling windows evidence of long memory is observed in certain time frames. These results are largely consistent with that of detrended fluctuation analysis. A test of firm-level information in explaining stock return predictability using a logistic regression model reveal that returns of large firms are more likely to possess long memory feature than in the returns of small firms. There is no evidence to suggest that turnover, earnings per share, book-to-market ratio, systematic risk and abnormal return with respect to the market model is associated with return predictability. However, degree of long-range dependence appears to be associated positively with earnings per share, systematic risk and abnormal return and negatively with book-to-market ratio.

  16. Charge trap memory based on few-layer black phosphorus.

    PubMed

    Feng, Qi; Yan, Faguang; Luo, Wengang; Wang, Kaiyou

    2016-02-01

    Atomically thin layered two-dimensional materials, including transition-metal dichalcogenide (TMDC) and black phosphorus (BP), have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices. Here, for the first time we show nonvolatile charge-trap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of the high-k HfO2. The device shows a high endurance of over 120 cycles and a stable retention of ∼30% charge loss after 10 years, even lower than the reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.

  17. Charge trap memory based on few-layer black phosphorus

    NASA Astrophysics Data System (ADS)

    Feng, Qi; Yan, Faguang; Luo, Wengang; Wang, Kaiyou

    2016-01-01

    Atomically thin layered two-dimensional materials, including transition-metal dichalcogenide (TMDC) and black phosphorus (BP), have been receiving much attention, because of their promising physical properties and potential applications in flexible and transparent electronic devices. Here, for the first time we show nonvolatile charge-trap memory devices, based on field-effect transistors with large hysteresis, consisting of a few-layer black phosphorus channel and a three dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. An unprecedented memory window exceeding 12 V is observed, due to the extraordinary trapping ability of the high-k HfO2. The device shows a high endurance of over 120 cycles and a stable retention of ~30% charge loss after 10 years, even lower than the reported MoS2 flash memory. The high program/erase current ratio, large memory window, stable retention and high on/off current ratio, provide a promising route towards flexible and transparent memory devices utilising atomically thin two-dimensional materials. The combination of 2D materials with traditional high-k charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.

  18. New approaches to addiction treatment based on learning and memory.

    PubMed

    Kiefer, Falk; Dinter, Christina

    2013-01-01

    Preclinical studies suggest that physiological learning processes are similar to changes observed in addicts at the molecular, neuronal, and structural levels. Based on the importance of classical and instrumental conditioning in the development and maintenance of addictive disorders, many have suggested cue-exposure-based extinction training of conditioned, drug-related responses as a potential new treatment of addiction. It may also be possible to facilitate this extinction training with pharmacological compounds that strengthen memory consolidation during cue exposure. Another potential therapeutic intervention would be based on the so-called reconsolidation theory. According to this hypothesis, already-consolidated memories return to a labile state when reactivated, allowing them to undergo another phase of consolidation-reconsolidation, which can be pharmacologically manipulated. These approaches suggest that the extinction of drug-related memories may represent a viable treatment strategy in the future treatment of addiction.

  19. New approaches to addiction treatment based on learning and memory.

    PubMed

    Kiefer, Falk; Dinter, Christina

    2013-01-01

    Preclinical studies suggest that physiological learning processes are similar to changes observed in addicts at the molecular, neuronal, and structural levels. Based on the importance of classical and instrumental conditioning in the development and maintenance of addictive disorders, many have suggested cue-exposure-based extinction training of conditioned, drug-related responses as a potential new treatment of addiction. It may also be possible to facilitate this extinction training with pharmacological compounds that strengthen memory consolidation during cue exposure. Another potential therapeutic intervention would be based on the so-called reconsolidation theory. According to this hypothesis, already-consolidated memories return to a labile state when reactivated, allowing them to undergo another phase of consolidation-reconsolidation, which can be pharmacologically manipulated. These approaches suggest that the extinction of drug-related memories may represent a viable treatment strategy in the future treatment of addiction. PMID:21735361

  20. Organisational Memories in Project-Based Companies: An Autopoietic View

    ERIC Educational Resources Information Center

    Koskinen, Kaj U.

    2010-01-01

    Purpose: The purpose of this paper is to describe project-based companies' knowledge production and memory development with the help of autopoietic epistemology. Design/methodology/approach: The discussion first defines the concept of a project-based company. Then the discussion deals with the two epistemological assumptions, namely cognitivist…

  1. Sleep Deprivation and Time-Based Prospective Memory

    PubMed Central

    Esposito, Maria José; Occhionero, Miranda; Cicogna, PierCarla

    2015-01-01

    Study Objectives: To evaluate the effect of sleep deprivation on time-based prospective memory performance, that is, realizing delayed intentions at an appropriate time in the future (e.g., to take a medicine in 30 minutes). Design: Between-subjects experimental design. The experimental group underwent 24 h of total sleep deprivation, and the control group had a regular sleep-wake cycle. Participants were tested at 08:00. Settings: Laboratory. Participants: Fifty healthy young adults (mean age 22 ± 2.1, 31 female). Interventions: 24 h of total sleep deprivation. Measurements and Results: Participants were monitored by wrist actigraphy for 3 days before the experimental session. The following cognitive tasks were administered: one time-based prospective memory task and 3 reasoning tasks as ongoing activity. Objective and subjective vigilance was assessed by the psychomotor vigilance task and a visual analog scale, respectively. To measure the time-based prospective memory task we assessed compliance and clock checking behavior (time monitoring). Sleep deprivation negatively affected time-based prospective memory compliance (P < 0.001), objective vigilance (mean RT: P < 0.001; slowest 10% RT: P < 0.001; lapses: P < 0.005), and subjective vigilance (P < 0.0001). Performance on reasoning tasks and time monitoring behavior did not differ between groups. Conclusions: The results highlight the potential dangerous effects of total sleep deprivation on human behavior, particularly the ability to perform an intended action after a few minutes. Sleep deprivation strongly compromises time-based prospective memory compliance but does not affect time check frequency. Sleep deprivation may impair the mechanism that allows the integration of information related to time monitoring with the prospective intention. Citation: Esposito MJ, Occhionero M, Cicogna P. Sleep deprivation and time-based prospective memory. SLEEP 2015;38(11):1823–1826. PMID:26085303

  2. Task Delegation Based Access Control Models for Workflow Systems

    NASA Astrophysics Data System (ADS)

    Gaaloul, Khaled; Charoy, François

    e-Government organisations are facilitated and conducted using workflow management systems. Role-based access control (RBAC) is recognised as an efficient access control model for large organisations. The application of RBAC in workflow systems cannot, however, grant permissions to users dynamically while business processes are being executed. We currently observe a move away from predefined strict workflow modelling towards approaches supporting flexibility on the organisational level. One specific approach is that of task delegation. Task delegation is a mechanism that supports organisational flexibility, and ensures delegation of authority in access control systems. In this paper, we propose a Task-oriented Access Control (TAC) model based on RBAC to address these requirements. We aim to reason about task from organisational perspectives and resources perspectives to analyse and specify authorisation constraints. Moreover, we present a fine grained access control protocol to support delegation based on the TAC model.

  3. Parallel calculations on shared memory, NUMA-based computers using MATLAB

    NASA Astrophysics Data System (ADS)

    Krotkiewski, Marcin; Dabrowski, Marcin

    2014-05-01

    Achieving satisfactory computational performance in numerical simulations on modern computer architectures can be a complex task. Multi-core design makes it necessary to parallelize the code. Efficient parallelization on NUMA (Non-Uniform Memory Access) shared memory architectures necessitates explicit placement of the data in the memory close to the CPU that uses it. In addition, using more than 8 CPUs (~100 cores) requires a cluster solution of interconnected nodes, which involves (expensive) communication between the processors. It takes significant effort to overcome these challenges even when programming in low-level languages, which give the programmer full control over data placement and work distribution. Instead, many modelers use high-level tools such as MATLAB, which severely limit the optimization/tuning options available. Nonetheless, the advantage of programming simplicity and a large available code base can tip the scale in favor of MATLAB. We investigate whether MATLAB can be used for efficient, parallel computations on modern shared memory architectures. A common approach to performance optimization of MATLAB programs is to identify a bottleneck and migrate the corresponding code block to a MEX file implemented in, e.g. C. Instead, we aim at achieving a scalable parallel performance of MATLABs core functionality. Some of the MATLABs internal functions (e.g., bsxfun, sort, BLAS3, operations on vectors) are multi-threaded. Achieving high parallel efficiency of those may potentially improve the performance of significant portion of MATLABs code base. Since we do not have MATLABs source code, our performance tuning relies on the tools provided by the operating system alone. Most importantly, we use custom memory allocation routines, thread to CPU binding, and memory page migration. The performance tests are carried out on multi-socket shared memory systems (2- and 4-way Intel-based computers), as well as a Distributed Shared Memory machine with 96 CPU

  4. A Web-Based Remote Access Laboratory Using SCADA

    ERIC Educational Resources Information Center

    Aydogmus, Z.; Aydogmus, O.

    2009-01-01

    The Internet provides an opportunity for students to access laboratories from outside the campus. This paper presents a Web-based remote access real-time laboratory using SCADA (supervisory control and data acquisition) control. The control of an induction motor is used as an example to demonstrate the effectiveness of this remote laboratory,…

  5. Manganese oxide microswitch for electronic memory based on neural networks

    NASA Technical Reports Server (NTRS)

    Ramesham, R.; Daud, T.; Moopenn, A.; Thakoor, A. P.; Khanna, S. K.

    1989-01-01

    A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.

  6. Object-based Encoding in Visual Working Memory: Evidence from Memory-driven Attentional Capture.

    PubMed

    Gao, Zaifeng; Yu, Shixian; Zhu, Chengfeng; Shui, Rende; Weng, Xuchu; Li, Peng; Shen, Mowei

    2016-01-01

    Visual working memory (VWM) adopts a specific manner of object-based encoding (OBE) to extract perceptual information: Whenever one feature-dimension is selected for entry into VWM, the others are also extracted. Currently most studies revealing OBE probed an 'irrelevant-change distracting effect', where changes of irrelevant-features dramatically affected the performance of the target feature. However, the existence of irrelevant-feature change may affect participants' processing manner, leading to a false-positive result. The current study conducted a strict examination of OBE in VWM, by probing whether irrelevant-features guided the deployment of attention in visual search. The participants memorized an object's colour yet ignored shape and concurrently performed a visual-search task. They searched for a target line among distractor lines, each embedded within a different object. One object in the search display could match the shape, colour, or both dimensions of the memory item, but this object never contained the target line. Relative to a neutral baseline, where there was no match between the memory and search displays, search time was significantly prolonged in all match conditions, regardless of whether the memory item was displayed for 100 or 1000 ms. These results suggest that task-irrelevant shape was extracted into VWM, supporting OBE in VWM. PMID:26956084

  7. Memory-efficient table look-up optimized algorithm for context-based adaptive variable length decoding in H.264/advanced video coding

    NASA Astrophysics Data System (ADS)

    Wang, Jianhua; Cheng, Lianglun; Wang, Tao; Peng, Xiaodong

    2016-03-01

    Table look-up operation plays a very important role during the decoding processing of context-based adaptive variable length decoding (CAVLD) in H.264/advanced video coding (AVC). However, frequent table look-up operation can result in big table memory access, and then lead to high table power consumption. Aiming to solve the problem of big table memory access of current methods, and then reduce high power consumption, a memory-efficient table look-up optimized algorithm is presented for CAVLD. The contribution of this paper lies that index search technology is introduced to reduce big memory access for table look-up, and then reduce high table power consumption. Specifically, in our schemes, we use index search technology to reduce memory access by reducing the searching and matching operations for code_word on the basis of taking advantage of the internal relationship among length of zero in code_prefix, value of code_suffix and code_lengh, thus saving the power consumption of table look-up. The experimental results show that our proposed table look-up algorithm based on index search can lower about 60% memory access consumption compared with table look-up by sequential search scheme, and then save much power consumption for CAVLD in H.264/AVC.

  8. Development, Demonstration, and Device Physics of Fet-Accessed One-Transistor Gallium Arsenide Dynamic Memory Technologies

    NASA Astrophysics Data System (ADS)

    Neudeck, Philip Gerold

    The introduction of digital GaAs into modern high -speed computing systems has led to an increasing demand for high-density memory in these GaAs technologies. To date, most of the memory development efforts in GaAs have been directed toward four- and six-transistor static RAM's, which consume substantial chip area and dissipate much static power resulting in limited single-chip GaAs storage capacities. As it has successfully done in silicon, a one-transistor dynamic RAM approach could alleviate these problems making higher density GaAs memories possible. This dissertation discusses theoretical and experimental work that presents the possibility for a high-speed, low-power, one-transistor dynamic RAM technology in GaAs. The two elements of the DRAM cell, namely the charge storage capacitor and the access field-effect transistor have been studied in detail. Isolated diode junction charge storage capacitors have demonstrated 30 minutes of storage time at room temperature with charge densities comparable to those obtained in planar silicon DRAM capacitors. GaAs JFET and MESFET technologies have been studied, and with careful device design and choice of proper operating voltages experimental results show that both can function as acceptable access transistors. One-transistor MESFET- and JFET-accessed DRAM cells have been fabricated and operated at room temperature and above with a standby power dissipation that is only a small fraction of the power dissipated by the best commercial GaAs static RAM cells. A 2 x 2 bit demonstration array was built and successfully operated at room temperature to demonstrate the addressable read/write capability of this new technology.

  9. Memory beyond expression.

    PubMed

    Delorenzi, A; Maza, F J; Suárez, L D; Barreiro, K; Molina, V A; Stehberg, J

    2014-01-01

    The idea that memories are not invariable after the consolidation process has led to new perspectives about several mnemonic processes. In this framework, we review our studies on the modulation of memory expression during reconsolidation. We propose that during both memory consolidation and reconsolidation, neuromodulators can determine the probability of the memory trace to guide behavior, i.e. they can either increase or decrease its behavioral expressibility without affecting the potential of persistent memories to be activated and become labile. Our hypothesis is based on the findings that positive modulation of memory expression during reconsolidation occurs even if memories are behaviorally unexpressed. This review discusses the original approach taken in the studies of the crab Neohelice (Chasmagnathus) granulata, which was then successfully applied to test the hypothesis in rodent fear memory. Data presented offers a new way of thinking about both weak trainings and experimental amnesia: memory retrieval can be dissociated from memory expression. Furthermore, the strategy presented here allowed us to show in human declarative memory that the periods in which long-term memory can be activated and become labile during reconsolidation exceeds the periods in which that memory is expressed, providing direct evidence that conscious access to memory is not needed for reconsolidation. Specific controls based on the constraints of reminders to trigger reconsolidation allow us to distinguish between obliterated and unexpressed but activated long-term memories after amnesic treatments, weak trainings and forgetting. In the hypothesis discussed, memory expressibility--the outcome of experience-dependent changes in the potential to behave--is considered as a flexible and modulable attribute of long-term memories. Expression seems to be just one of the possible fates of re-activated memories.

  10. PIYAS-proceeding to intelligent service oriented memory allocation for flash based data centric sensor devices in wireless sensor networks.

    PubMed

    Rizvi, Sanam Shahla; Chung, Tae-Sun

    2010-01-01

    Flash memory has become a more widespread storage medium for modern wireless devices because of its effective characteristics like non-volatility, small size, light weight, fast access speed, shock resistance, high reliability and low power consumption. Sensor nodes are highly resource constrained in terms of limited processing speed, runtime memory, persistent storage, communication bandwidth and finite energy. Therefore, for wireless sensor networks supporting sense, store, merge and send schemes, an efficient and reliable file system is highly required with consideration of sensor node constraints. In this paper, we propose a novel log structured external NAND flash memory based file system, called Proceeding to Intelligent service oriented memorY Allocation for flash based data centric Sensor devices in wireless sensor networks (PIYAS). This is the extended version of our previously proposed PIYA [1]. The main goals of the PIYAS scheme are to achieve instant mounting and reduced SRAM space by keeping memory mapping information to a very low size of and to provide high query response throughput by allocation of memory to the sensor data by network business rules. The scheme intelligently samples and stores the raw data and provides high in-network data availability by keeping the aggregate data for a longer period of time than any other scheme has done before. We propose effective garbage collection and wear-leveling schemes as well. The experimental results show that PIYAS is an optimized memory management scheme allowing high performance for wireless sensor networks.

  11. PIYAS-Proceeding to Intelligent Service Oriented Memory Allocation for Flash Based Data Centric Sensor Devices in Wireless Sensor Networks

    PubMed Central

    Rizvi, Sanam Shahla; Chung, Tae-Sun

    2010-01-01

    Flash memory has become a more widespread storage medium for modern wireless devices because of its effective characteristics like non-volatility, small size, light weight, fast access speed, shock resistance, high reliability and low power consumption. Sensor nodes are highly resource constrained in terms of limited processing speed, runtime memory, persistent storage, communication bandwidth and finite energy. Therefore, for wireless sensor networks supporting sense, store, merge and send schemes, an efficient and reliable file system is highly required with consideration of sensor node constraints. In this paper, we propose a novel log structured external NAND flash memory based file system, called Proceeding to Intelligent service oriented memorY Allocation for flash based data centric Sensor devices in wireless sensor networks (PIYAS). This is the extended version of our previously proposed PIYA [1]. The main goals of the PIYAS scheme are to achieve instant mounting and reduced SRAM space by keeping memory mapping information to a very low size of and to provide high query response throughput by allocation of memory to the sensor data by network business rules. The scheme intelligently samples and stores the raw data and provides high in-network data availability by keeping the aggregate data for a longer period of time than any other scheme has done before. We propose effective garbage collection and wear-leveling schemes as well. The experimental results show that PIYAS is an optimized memory management scheme allowing high performance for wireless sensor networks. PMID:22315541

  12. PIYAS-proceeding to intelligent service oriented memory allocation for flash based data centric sensor devices in wireless sensor networks.

    PubMed

    Rizvi, Sanam Shahla; Chung, Tae-Sun

    2010-01-01

    Flash memory has become a more widespread storage medium for modern wireless devices because of its effective characteristics like non-volatility, small size, light weight, fast access speed, shock resistance, high reliability and low power consumption. Sensor nodes are highly resource constrained in terms of limited processing speed, runtime memory, persistent storage, communication bandwidth and finite energy. Therefore, for wireless sensor networks supporting sense, store, merge and send schemes, an efficient and reliable file system is highly required with consideration of sensor node constraints. In this paper, we propose a novel log structured external NAND flash memory based file system, called Proceeding to Intelligent service oriented memorY Allocation for flash based data centric Sensor devices in wireless sensor networks (PIYAS). This is the extended version of our previously proposed PIYA [1]. The main goals of the PIYAS scheme are to achieve instant mounting and reduced SRAM space by keeping memory mapping information to a very low size of and to provide high query response throughput by allocation of memory to the sensor data by network business rules. The scheme intelligently samples and stores the raw data and provides high in-network data availability by keeping the aggregate data for a longer period of time than any other scheme has done before. We propose effective garbage collection and wear-leveling schemes as well. The experimental results show that PIYAS is an optimized memory management scheme allowing high performance for wireless sensor networks. PMID:22315541

  13. Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement

    NASA Astrophysics Data System (ADS)

    Kim, Hyungjin; Lee, Jong-Ho; Park, Byung-Gook

    2016-08-01

    One of the major concerns of one-transistor dynamic random access memory (1T-DRAM) is poor retention time. In this letter, a 1T-DRAM cell with two separated asymmetric gates was fabricated and evaluated to improve sensing margin and retention characteristics. It was observed that significantly enhanced sensing margin and retention time over 1 s were obtained using a negatively biased second gate and trapped electrons in the nitride layer because of increased hole capacity in the floating body. These findings indicate that the proposed device could serve as a promising candidate for overcoming retention issues of 1T-DRAM cells.

  14. Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

    NASA Astrophysics Data System (ADS)

    Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M.

    2016-10-01

    In this study, an adjustable built-in resistor was observed on an indium-tin oxide (ITO)-capped resistance random access memory (RRAM) device, which has the potential to reduce operating power. Quite notably, the high-resistance state (HRS) current of the device decreased with decreasing current compliance, and a special situation, that is, a gradual change in current always appears and climbs slowly to reach the compliance current in the set process even when the compliance current decreases, was observed. Owing to this observed phenomenon, the device is regarded to be equipped with an adjustable built-in resistor, which has the potential for low-power device application.

  15. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.

    PubMed

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-21

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. PMID:26695561

  16. Appearance-based first impressions and person memory.

    PubMed

    Bell, Raoul; Mieth, Laura; Buchner, Axel

    2015-03-01

    Previous research has demonstrated that people preferentially remember reputational information that is emotionally incongruent to their expectations, but it has left open the question of the generality of this effect. Three conflicting hypotheses were proposed: (a) The effect is restricted to information relevant to reciprocal social exchange. (b) The effect is most pronounced for emotional (approach-and-avoidance-relevant) information. (c) The effect is due to a general tendency of the cognitive system to attend to unexpected and novel information regardless of its (emotional) content. Here, we varied the type of to-be-remembered person information across experiments. To stimulate expectations, we selected faces whose facial appearance was rated as pleasant or disgusting (Experiments 1 and 2), as intelligent or unintelligent (Experiment 3), or as being that of a lawyer or a farmer (Experiment 4). These faces were paired with behavior descriptions that violated or confirmed these appearance-based 1st impressions. Source memory for the association between the faces and the descriptions was assessed with surprise memory tests. The results show that people are willing to form various social expectations based on facial appearance alone, and they support the hypothesis that the classification of the faces in the memory test is biased by schema-congruent guessing. Source memory was generally enhanced for information violating appearance-based social expectations. In sum, the results show that person memory is consistently affected by different kinds of social expectations, supporting the idea that the mechanisms determining memory performance generalize beyond exchange-relevant reputational and emotional information.

  17. Bipartite memory network architectures for parallel processing

    SciTech Connect

    Smith, W.; Kale, L.V. . Dept. of Computer Science)

    1990-01-01

    Parallel architectures are boradly classified as either shared memory or distributed memory architectures. In this paper, the authors propose a third family of architectures, called bipartite memory network architectures. In this architecture, processors and memory modules constitute a bipartite graph, where each processor is allowed to access a small subset of the memory modules, and each memory module allows access from a small set of processors. The architecture is particularly suitable for computations requiring dynamic load balancing. The authors explore the properties of this architecture by examining the Perfect Difference set based topology for the graph. Extensions of this topology are also suggested.

  18. Interference-Based Forgetting in Verbal Short-Term Memory

    ERIC Educational Resources Information Center

    Lewandowsky, Stephan; Geiger, Sonja M.; Oberauer, Klaus

    2008-01-01

    This article presents four experiments that tested predictions of SOB (Serial Order in a Box), an interference-based theory of short-term memory. Central to SOB is the concept of novelty-sensitive encoding, which holds that items are encoded to the extent that they differ from already-encoded information. On the additional assumption that…

  19. Evidence-based practice recommendations for memory rehabilitation.

    PubMed

    Piras, F; Borella, E; Incoccia, C; Carlesimo, G A

    2011-03-01

    Memory impairment is a common consequence of neurological injury or disease, causing significant disability in everyday life, and is therefore a critical target for rehabilitation intervention. Here we report a review of the available evidence on the efficacy of restitution-oriented therapies and compensatory approaches for memory rehabilitation. A total of 110 studies was systematically classified and analyzed in order to generate evidence-based clinical recommendations for treatment providers. Different key aspects, such as types of brain damage, treatments characteristics and outcome measurements guided the evaluation of the literature as to appraise the potential interaction between patients characteristics, interventions and outcomes. The general conclusion is that memory re-training programs and compensatory approaches are probably effective in ameliorating memory disorders in patients with focal brain lesions, with some evidences of changes in memory functioning extending beyond the trained skills. Externally directed assistive devices and specific learning strategies are effective (with a level D and B of evidence, respectively) in retaining information relevant for daily needs also in patients with degenerative diseases. Some methodological concerns, such as the heterogeneity of subjects, interventions and outcomes studied, may limit the generalization of the present recommendations.

  20. Hippocampal Attractor Dynamics Predict Memory-Based Decision Making.

    PubMed

    Steemers, Ben; Vicente-Grabovetsky, Alejandro; Barry, Caswell; Smulders, Peter; Schröder, Tobias Navarro; Burgess, Neil; Doeller, Christian F

    2016-07-11

    Memories are thought to be retrieved by attractor dynamics if a given input is sufficiently similar to a stored attractor state [1-5]. The hippocampus, a region crucial for spatial navigation [6-12] and episodic memory [13-18], has been associated with attractor-based computations [5, 9], receiving support from the way rodent place cells "remap" nonlinearly between spatial representations [19-22]. In humans, nonlinear response patterns have been reported in perceptual categorization tasks [23-25]; however, it remains elusive whether human memory retrieval is driven by attractor dynamics and what neural mechanisms might underpin them. To test this, we used a virtual reality [7, 11, 26-28] task where participants learned object-location associations within two distinct virtual reality environments. Participants were subsequently exposed to four novel intermediate environments, generated by linearly morphing the background landscapes of the familiar environments, while tracking fMRI activity. We show that linear changes in environmental context cause linear changes in activity patterns in sensory cortex but cause dynamic, nonlinear changes in both hippocampal activity pattern and remembered locations. Furthermore, the sigmoidal response in the hippocampus scaled with the strength of the sigmoidal pattern in spatial memory. These results indicate that mnemonic decisions in an ambiguous novel context relate to putative attractor dynamics in the hippocampus, which support the dynamic remapping of memories. PMID:27345167

  1. A memory-based theory of verbal cognition.

    PubMed

    Dennis, Simon

    2005-03-01

    The syntagmatic paradigmatic model is a distributed, memory-based account of verbal processing. Built on a Bayesian interpretation of string edit theory, it characterizes the control of verbal cognition as the retrieval of sets of syntagmatic and paradigmatic constraints from sequential and relational long-term memory and the resolution of these constraints in working memory. Lexical information is extracted directly from text using a version of the expectation maximization algorithm. In this article, the model is described and then illustrated on a number of phenomena, including sentence processing, semantic categorization and rating, short-term serial recall, and analogical and logical inference. Subsequently, the model is used to answer questions about a corpus of tennis news articles taken from the Internet. The model's success demonstrates that it is possible to extract propositional information from naturally occurring text without employing a grammar, defining a set of heuristics, or specifying a priori a set of semantic roles. PMID:21702771

  2. Towards scalable parellelism in Monte Carlo particle transport codes using remote memory access

    SciTech Connect

    Romano, Paul K; Brown, Forrest B; Forget, Benoit

    2010-01-01

    One forthcoming challenge in the area of high-performance computing is having the ability to run large-scale problems while coping with less memory per compute node. In this work, they investigate a novel data decomposition method that would allow Monte Carlo transport calculations to be performed on systems with limited memory per compute node. In this method, each compute node remotely retrieves a small set of geometry and cross-section data as needed and remotely accumulates local tallies when crossing the boundary of the local spatial domain. initial results demonstrate that while the method does allow large problems to be run in a memory-limited environment, achieving scalability may be difficult due to inefficiencies in the current implementation of RMA operations.

  3. Cortical dynamics of visual change detection based on sensory memory.

    PubMed

    Urakawa, Tomokazu; Inui, Koji; Yamashiro, Koya; Tanaka, Emi; Kakigi, Ryusuke

    2010-08-01

    Detecting a visual change was suggested to relate closely to the visual sensory memory formed by visual stimuli before the occurrence of the change, because change detection involves identifying a difference between ongoing and preceding sensory conditions. Previous neuroimaging studies showed that an abrupt visual change activates the middle occipital gyrus (MOG). However, it still remains to be elucidated whether the MOG is related to visual change detection based on sensory memory. Here we tried to settle this issue using a new method of stimulation with blue and red LEDs to emphasize a memory-based change detection process. There were two stimuli, a standard trial stimulus and a deviant trial stimulus. The former was a red light lasting 500 ms, and the latter was a red light lasting 250 ms immediately followed by a blue light lasting 250 ms. Effects of the trial-trial interval, 250 approximately 2000 ms, were investigated to know how cortical responses to the abrupt change (from red to blue) were affected by preceding conditions. The brain response to the deviant trial stimulus was recorded by magnetoencephalography. Results of a multi-dipole analysis showed that the activity in the MOG, peaking at around 150 ms after the change onset, decreased in amplitude as the interval increased, but the earlier activity in BA 17/18 was not affected by the interval. These results suggested that the MOG is an important cortical area relating to the sensory memory-based visual change-detecting system.

  4. Access Control of Web- and Java-Based Applications

    NASA Technical Reports Server (NTRS)

    Tso, Kam S.; Pajevski, Michael J.

    2013-01-01

    Cybersecurity has become a great concern as threats of service interruption, unauthorized access, stealing and altering of information, and spreading of viruses have become more prevalent and serious. Application layer access control of applications is a critical component in the overall security solution that also includes encryption, firewalls, virtual private networks, antivirus, and intrusion detection. An access control solution, based on an open-source access manager augmented with custom software components, was developed to provide protection to both Web-based and Javabased client and server applications. The DISA Security Service (DISA-SS) provides common access control capabilities for AMMOS software applications through a set of application programming interfaces (APIs) and network- accessible security services for authentication, single sign-on, authorization checking, and authorization policy management. The OpenAM access management technology designed for Web applications can be extended to meet the needs of Java thick clients and stand alone servers that are commonly used in the JPL AMMOS environment. The DISA-SS reusable components have greatly reduced the effort for each AMMOS subsystem to develop its own access control strategy. The novelty of this work is that it leverages an open-source access management product that was designed for Webbased applications to provide access control for Java thick clients and Java standalone servers. Thick clients and standalone servers are still commonly used in businesses and government, especially for applications that require rich graphical user interfaces and high-performance visualization that cannot be met by thin clients running on Web browsers

  5. Respecting Relations: Memory Access and Antecedent Retrieval in Incremental Sentence Processing

    ERIC Educational Resources Information Center

    Kush, Dave W.

    2013-01-01

    This dissertation uses the processing of anaphoric relations to probe how linguistic information is encoded in and retrieved from memory during real-time sentence comprehension. More specifically, the dissertation attempts to resolve a tension between the demands of a linguistic processor implemented in a general-purpose cognitive architecture and…

  6. Memory Retrieval Given Two Independent Cues: Cue Selection or Parallel Access?

    ERIC Educational Resources Information Center

    Rickard, Timothy C.; Bajic, Daniel

    2004-01-01

    A basic but unresolved issue in the study of memory retrieval is whether multiple independent cues can be used concurrently (i.e., in parallel) to recall a single, common response. A number of empirical results, as well as potentially applicable theories, suggest that retrieval can proceed in parallel, though Rickard (1997) set forth a model that…

  7. Hyperlink Format, Categorization Abilities and Memory Span as Contributors to Deaf Users Hypertext Access

    ERIC Educational Resources Information Center

    Farjardo, Inmaculada; Arfe, Barbara; Benedetti, Patrizia; Altoe, Gianmarco

    2008-01-01

    Sixty deaf and hearing students were asked to search for goods in a Hypertext Supermarket with either graphical or textual links of high typicality, frequency, and familiarity. Additionally, they performed a picture and word categorization task and two working memory span tasks (spatial and verbal). Results showed that deaf students were faster in…

  8. Thermoplastic shape-memory polyurethanes based on natural oils

    NASA Astrophysics Data System (ADS)

    Saralegi, Ainara; Foster, E. Johan; Weder, Christoph; Eceiza, Arantxa; Corcuera, Maria Angeles

    2014-02-01

    A new family of segmented thermoplastic polyurethanes with thermally activated shape-memory properties was synthesized and characterized. Polyols derived from castor oil with different molecular weights but similar chemical structures and a corn-sugar-based chain extender (propanediol) were used as starting materials in order to maximize the content of carbon from renewable resources in the new materials. The composition was systematically varied to establish a structure-property map and identify compositions with desirable shape-memory properties. The thermal characterization of the new polyurethanes revealed a microphase separated structure, where both the soft (by convention the high molecular weight diol) and the hard phases were highly crystalline. Cyclic thermo-mechanical tensile tests showed that these polymers are excellent candidates for use as thermally activated shape-memory polymers, in which the crystalline soft segments promote high shape fixity values (close to 100%) and the hard segment crystallites ensure high shape recovery values (80-100%, depending on the hard segment content). The high proportion of components from renewable resources used in the polyurethane formulation leads to the synthesis of bio-based polyurethanes with shape-memory properties.

  9. Memories.

    ERIC Educational Resources Information Center

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  10. Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

    PubMed Central

    Zhou, Ye; Han, Su-Ting; Yan, Yan; Zhou, Li; Huang, Long-Biao; Zhuang, Jiaqing; Sonar, Prashant; Roy, V. A. L.

    2015-01-01

    Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices. PMID:26029856

  11. Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends.

    PubMed

    Zhou, Ye; Han, Su-Ting; Yan, Yan; Zhou, Li; Huang, Long-Biao; Zhuang, Jiaqing; Sonar, Prashant; Roy, V A L

    2015-01-01

    Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.

  12. Implicit schemata and categories in memory-based language processing.

    PubMed

    van den Bosch, Antal; Daelemans, Walter

    2013-09-01

    Memory-based language processing (MBLP) is an approach to language processing based on exemplar storage during learning and analogical reasoning during processing. From a cognitive perspective, the approach is attractive as a model for human language processing because it does not make any assumptions about the way abstractions are shaped, nor any a priori distinction between regular and exceptional exemplars, allowing it to explain fluidity of linguistic categories, and both regularization and irregularization in processing. Schema-like behaviour and the emergence of categories can be explained in MBLP as by-products of analogical reasoning over exemplars in memory. We focus on the reliance of MBLP on local (versus global) estimation, which is a relatively poorly understood but unique characteristic that separates the memory-based approach from globally abstracting approaches in how the model deals with redundancy and parsimony. We compare our model to related analogy-based methods, as well as to example-based frameworks that assume some systemic form of abstraction.

  13. Implementing context and team based access control in healthcare intranets.

    PubMed

    Georgiadis, Christos K; Mavridis, Ioannis K; Nikolakopoulou, Georgia; Pangalos, George I

    2002-09-01

    The establishment of an efficient access control system in healthcare intranets is a critical security issue directly related to the protection of patients' privacy. Our C-TMAC (Context and Team-based Access Control) model is an active security access control model that layers dynamic access control concepts on top of RBAC (Role-based) and TMAC (Team-based) access control models. It also extends them in the sense that contextual information concerning collaborative activities is associated with teams of users and user permissions are dynamically filtered during runtime. These features of C-TMAC meet the specific security requirements of healthcare applications. In this paper, an experimental implementation of the C-TMAC model is described. More specifically, we present the operational architecture of the system that is used to implement C-TMAC security components in a healthcare intranet. Based on the technological platform of an Oracle Data Base Management System and Application Server, the application logic is coded with stored PL/SQL procedures that include Dynamic SQL routines for runtime value binding purposes. The resulting active security system adapts to current need-to-know requirements of users during runtime and provides fine-grained permission granularity. Apart from identity certificates for authentication, it uses attribute certificates for communicating critical security metadata, such as role membership and team participation of users.

  14. Dimension-based attention in visual short-term memory.

    PubMed

    Pilling, Michael; Barrett, Doug J K

    2016-07-01

    We investigated how dimension-based attention influences visual short-term memory (VSTM). This was done through examining the effects of cueing a feature dimension in two perceptual comparison tasks (change detection and sameness detection). In both tasks, a memory array and a test array consisting of a number of colored shapes were presented successively, interleaved by a blank interstimulus interval (ISI). In Experiment 1 (change detection), the critical event was a feature change in one item across the memory and test arrays. In Experiment 2 (sameness detection), the critical event was the absence of a feature change in one item across the two arrays. Auditory cues indicated the feature dimension (color or shape) of the critical event with 80 % validity; the cues were presented either prior to the memory array, during the ISI, or simultaneously with the test array. In Experiment 1, the cue validity influenced sensitivity only when the cue was given at the earliest position; in Experiment 2, the cue validity influenced sensitivity at all three cue positions. We attributed the greater effectiveness of top-down guidance by cues in the sameness detection task to the more active nature of the comparison process required to detect sameness events (Hyun, Woodman, Vogel, Hollingworth, & Luck, Journal of Experimental Psychology: Human Perception and Performance, 35; 1140-1160, 2009). PMID:26920437

  15. Overview of emerging nonvolatile memory technologies.

    PubMed

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  16. Overview of emerging nonvolatile memory technologies

    PubMed Central

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  17. Strategies To Enhance Memory Based on Brain-Research.

    ERIC Educational Resources Information Center

    Banikowski, Alison K.; Mehring, Teresa A.

    1999-01-01

    This article reviews the literature on three aspects of memory: (1) an information processing model of memory (including the sensory register, attention, short-term memory, and long-term memory); (2) instructional strategies designed to enhance memory (which stress gaining students' attention and active involvement); and (3) reasons why…

  18. CONTEXT PHOTOGRAPH OF BASE END STATIONS FROM ACCESS ROAD AT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    CONTEXT PHOTOGRAPH OF BASE END STATIONS FROM ACCESS ROAD AT MIDSLOPE, FACING NORTH. FROM LEFT TO RIGHT ARE STATIONS BARLOW, SAXTON, LEARY, MERRIAM (OUT OF VIEW BEHIND WW n ERA CONSTRUCTION), OSGOOD, AND FARLEY - White's Point Reservation, Base End Stations, Bounded by Voyager Circle & Mariner Drive, San Pedro, Los Angeles County, CA

  19. Role-based access control model for GIS

    NASA Astrophysics Data System (ADS)

    Pan, Yuqing; Sheng, Yehua; Zhou, Jieyu

    2007-06-01

    Access control of Geographical Information System (GIS) has more complex spatial constraints than the general MIS system, it makes the classic role-based access control model(RBAC) can't be used in GIS. To achieve an effective Access Control Model for GIS, an extension model of the RBAC is presented in the paper. Firstly, this paper introduce the three kinds spatial constraints that included layer constraints, region constraints and spatial object constraints; Then the paper expanded the basic RBAC model, added regional class, layers class and so on; Finally, the paper has given the system RABC control model as well as the realization method in view of GIS. An extension model of the RBAC is applicable to mobile computing, wireless access and system about location is concluded by analyzing.

  20. Access Control of Web and Java Based Applications

    NASA Technical Reports Server (NTRS)

    Tso, Kam S.; Pajevski, Michael J.; Johnson, Bryan

    2011-01-01

    Cyber security has gained national and international attention as a result of near continuous headlines from financial institutions, retail stores, government offices and universities reporting compromised systems and stolen data. Concerns continue to rise as threats of service interruption, and spreading of viruses become ever more prevalent and serious. Controlling access to application layer resources is a critical component in a layered security solution that includes encryption, firewalls, virtual private networks, antivirus, and intrusion detection. In this paper we discuss the development of an application-level access control solution, based on an open-source access manager augmented with custom software components, to provide protection to both Web-based and Java-based client and server applications.

  1. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    SciTech Connect

    Popovici, M. Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  2. A massively parallel memory-based story system for psychotherapy.

    PubMed

    Smith, R N; Chen, C C; Feng, F F; Gomez-Gauchia, H

    1993-10-01

    We describe a memory-based system for psychotherapy, Dr. Bob, built to run on the data parallel processor Thinking Machines, Inc., CM-2a Connection Machine. The system retrieves, in parallel, stories of alcohol addiction and sexual abuse which can be used by psychiatrists in working with their patients as part of their work in recovering from addictive behavior and psychological trauma. The program is written in *LISP (pronounced Star LISP), a version of LISP used in programming Connection Machines. PMID:8243067

  3. An Account of Performance in Accessing Information Stored in Long-Term Memory. A Fixed-Links Model Approach

    ERIC Educational Resources Information Center

    Altmeyer, Michael; Schweizer, Karl; Reiss, Siegbert; Ren, Xuezhu; Schreiner, Michael

    2013-01-01

    Performance in working memory and short-term memory tasks was employed for predicting performance in a long-term memory task in order to find out about the underlying processes. The types of memory were represented by versions of the Posner Task, the Backward Counting Task and the Sternberg Task serving as measures of long-term memory, working…

  4. Dual port memory based Heapsort implementation for FPGA

    NASA Astrophysics Data System (ADS)

    Zabołotny, Wojciech M.

    2011-10-01

    This document presents a proposal of implementation of the Heapsort algorithm, which utilizes hardware features of modern Field-Programmable Gate Array (FPGA) chips, such as dual port random access memories (DP RAM), to implement efficient sorting of a data stream. The implemented sorter is able to sort one data record every two clock periods. This throughput does not depend on the capacity of the sorter (defined as number of storage cells in the sorter). The mean latency (expressed in sorting cycles - each equal to two clock periods) when sorting the stream of data is equal to the capacity of the sorter. Due to efficient use of FPGA resources (e.g. data are stored mainly in internal block RAMs), the complexity of the sorter is proportional to the logarithm of sorter capacity. Only the required RAM size is linearly proportional to the sorter capacity. The proposed sorter has been tested in simulations and synthesized for real FPGA chips to verify its correctness.

  5. Attentional control and inferences of agency: Working memory load differentially modulates goal-based and prime-based agency experiences.

    PubMed

    Renes, Robert A; van Haren, Neeltje E M; Aarts, Henk

    2015-12-15

    Previous research indicates that people can infer self-agency, the experience of causing outcomes as a result of one's own actions, in situations where information about action-outcomes is pre-activated through goal-setting or priming. We argue that goal-based agency inferences rely on attentional control that processes information about matches and mismatches between intended and actual outcomes. Prime-based inferences follow an automatic cognitive accessibility process that relies on matches between primed and actual information about outcomes. We tested an improved task for a better examination of goal-based vs. primed-based agency inferences, and examined the moderating effect of working memory load on both types of inferences. Findings of four studies showed that goal-based, but not prime-based agency inferences dwindled under working memory load. These findings suggest that goal-based (vs. primed-based) agency inferences indeed rely on attentional control, thus rendering goal-based agency inferences especially prone to conditions that modulate goal-directed control processes. PMID:26497069

  6. Access to Attitude-Relevant Information in Memory as a Determinant of Attitude-Behavior Consistency.

    ERIC Educational Resources Information Center

    Kallgren, Carl A.; Wood, Wendy

    Recent reserach has attempted to determine systematically how attitudes influence behavior. This research examined whether access to attitude-relevant beliefs and prior experiences would mediate the relation between attitudes and behavior. Subjects were 49 college students with a mean age of 27 who did not live with their parents or in…

  7. 75 FR 16507 - In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-01

    ..., California (``Rambus''). 73 FR 75131-2. The complaint, as amended and supplemented, alleges violations of... Commission's action. See Presidential Memorandum of July 21, 2005, 70 FR 43251 (July 26, 2005). During this... COMMISSION In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access...

  8. A Symptom-Focused Hypnotic Approach to Accessing and Processing Previously Repressed/Dissociated Memories.

    ERIC Educational Resources Information Center

    Ratican, Kathleen L.

    1996-01-01

    The kinesthetic track back technique accesses the origins of current symptoms and may uncover previously repressed/dissociated material, if such material exists in the client's unconscious mind, is relevant to the symptoms, and is ready to be processed consciously. Case examples are given to illustrate proper use of this technique. (LSR)

  9. Glprof: A Gprof inspired, Callgraph-oriented Per-Object Disseminating Memory Access Multi-Cache Profiler

    SciTech Connect

    Janjusic, Tommy; Kartsaklis, Christos

    2015-01-01

    Application analysis is facilitated through a number of program profiling tools. The tools vary in their complexity, ease of deployment, design, and profiling detail. Specifically, understand- ing, analyzing, and optimizing is of particular importance for scientific applications where minor changes in code paths and data-structure layout can have profound effects. Understanding how intricate data-structures are accessed and how a given memory system responds is a complex task. In this paper we describe a trace profiling tool, Glprof, specifically aimed to lessen the burden of the programmer to pin-point heavily involved data-structures during an application's run-time, and understand data-structure run-time usage. Moreover, we showcase the tool's modularity using additional cache simulation components. We elaborate on the tool's design, and features. Finally we demonstrate the application of our tool in the context of Spec bench- marks using the Glprof profiler and two concurrently running cache simulators, PPC440 and AMD Interlagos.

  10. Fencing network direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2015-07-14

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to a deterministic data communications network through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and the deterministic data communications network; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  11. Fencing network direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2015-07-07

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to a deterministic data communications network through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and the deterministic data communications network; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  12. Brain potentials reflect access to visual and emotional memories for faces.

    PubMed

    Bobes, Maria A; Quiñonez, Ileana; Perez, Jhoanna; Leon, Inmaculada; Valdés-Sosa, Mitchell

    2007-05-01

    Familiar faces convey different types of information, unlocking memories related to social-emotional significance. Here, the availability over time of different types of memory was evaluated using the time-course of P3 event related potentials. Two oddball paradigms were employed, both using unfamiliar faces as standards. The infrequent targets were, respectively, artificially-learned faces (devoid of social-emotional content) and faces of acquaintances. Although in both tasks targets were detected accurately, the corresponding time-course and scalp distribution of the P3 responses differed. Artificially-learned and acquaintance faces both elicited a P3b, maximal over centro-parietal sites, and a latency of 500ms. Faces of acquaintances elicited an additional component, an early P3 maximal over frontal sites: with a latency of 350ms. This suggests that visual familiarity can only trigger the overt recognition processes leading to the slower P3b, whereas emotional-social information can also elicit fast and automatic assessments (indexed by the frontal-P3) crucial for successful social interactions. PMID:17350154

  13. Impact of adolescent sucrose access on cognitive control, recognition memory, and parvalbumin immunoreactivity

    PubMed Central

    Killcross, Simon; Hambly, Luke D.; Morris, Margaret J.; Westbrook, R. Fred

    2015-01-01

    In this study we sought to determine the effect of daily sucrose consumption in young rats on their subsequent performance in tasks that involve the prefrontal cortex and hippocampus. High levels of sugar consumption have been associated with the development of obesity, however less is known about how sugar consumption influences behavioral control and high-order cognitive processes. Of particular concern is the fact that sugar intake is greatest in adolescence, an important neurodevelopmental period. We provided sucrose to rats when they were progressing through puberty and adolescence. Cognitive performance was assessed in adulthood on a task related to executive function, a rodent analog of the Stroop task. We found that sucrose-exposed rats failed to show context-appropriate responding during incongruent stimulus compounds presented at test, indicative of impairments in prefrontal cortex function. Sucrose exposed rats also showed deficits in an on object-in-place recognition memory task, indicating that both prefrontal and hippocampal function was impaired. Analysis of brains showed a reduction in expression of parvalbumin-immunoreactive GABAergic interneurons in the hippocampus and prefrontal cortex, indicating that sucrose consumption during adolescence induced long-term pathology, potentially underpinning the cognitive deficits observed. These results suggest that consumption of high levels of sugar-sweetened beverages by adolescents may also impair neurocognitive functions affecting decision-making and memory, potentially rendering them at risk for developing mental health disorders. PMID:25776039

  14. Brain potentials reflect access to visual and emotional memories for faces.

    PubMed

    Bobes, Maria A; Quiñonez, Ileana; Perez, Jhoanna; Leon, Inmaculada; Valdés-Sosa, Mitchell

    2007-05-01

    Familiar faces convey different types of information, unlocking memories related to social-emotional significance. Here, the availability over time of different types of memory was evaluated using the time-course of P3 event related potentials. Two oddball paradigms were employed, both using unfamiliar faces as standards. The infrequent targets were, respectively, artificially-learned faces (devoid of social-emotional content) and faces of acquaintances. Although in both tasks targets were detected accurately, the corresponding time-course and scalp distribution of the P3 responses differed. Artificially-learned and acquaintance faces both elicited a P3b, maximal over centro-parietal sites, and a latency of 500ms. Faces of acquaintances elicited an additional component, an early P3 maximal over frontal sites: with a latency of 350ms. This suggests that visual familiarity can only trigger the overt recognition processes leading to the slower P3b, whereas emotional-social information can also elicit fast and automatic assessments (indexed by the frontal-P3) crucial for successful social interactions.

  15. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

    PubMed

    Fakher, Sundes; Nejm, Razan; Ayesh, Ahmad; Al-Ghaferi, Amal; Zeze, Dagou; Mabrook, Mohammed

    2016-01-01

    The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance-voltage (C-V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.

  16. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

    PubMed

    Fakher, Sundes; Nejm, Razan; Ayesh, Ahmad; Al-Ghaferi, Amal; Zeze, Dagou; Mabrook, Mohammed

    2016-01-01

    The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance-voltage (C-V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states. PMID:27598112

  17. [Neurodynamic Bases of Imitation Learning and Episodic Memory].

    PubMed

    Tsukerman, V D

    2016-01-01

    In this review, three essentially important processes in development of cognitive behavior are considered: knowledge of a spatial environment by means of physical activity, coding and a call of an existential context of episodic memory and imitation learning based on the mirror neural mechanism. The data show that the parietal and frontal system of learning by imitation, allows the developing organism to seize skills of management and motive synergies in perisomatic space, to understand intentions and the purposes of observed actions of other individuals. At the same time a widely distributed parietal and frontal and entorhinal-hippocampal system mediates spatial knowledge and the solution of the navigation tasks important for creation of an existential context of episodic memory.

  18. [Neurodynamic Bases of Imitation Learning and Episodic Memory].

    PubMed

    Tsukerman, V D

    2016-01-01

    In this review, three essentially important processes in development of cognitive behavior are considered: knowledge of a spatial environment by means of physical activity, coding and a call of an existential context of episodic memory and imitation learning based on the mirror neural mechanism. The data show that the parietal and frontal system of learning by imitation, allows the developing organism to seize skills of management and motive synergies in perisomatic space, to understand intentions and the purposes of observed actions of other individuals. At the same time a widely distributed parietal and frontal and entorhinal-hippocampal system mediates spatial knowledge and the solution of the navigation tasks important for creation of an existential context of episodic memory. PMID:27192841

  19. Access Control for Agent-based Computing: A Distributed Approach.

    ERIC Educational Resources Information Center

    Antonopoulos, Nick; Koukoumpetsos, Kyriakos; Shafarenko, Alex

    2001-01-01

    Discusses the mobile software agent paradigm that provides a foundation for the development of high performance distributed applications and presents a simple, distributed access control architecture based on the concept of distributed, active authorization entities (lock cells), any combination of which can be referenced by an agent to provide…

  20. Mobile Access to the Internet: A Mediator-Based Solution.

    ERIC Educational Resources Information Center

    Alanko, Timo; Kojo, Markku; Liljeberg, Mika; Raatikainen, Kimmo

    1999-01-01

    Provides an overview of problems related to wireless mobility, specifically the use of cellular telephones to access remote information stores, such as the Internet, and computing services. Presents a new software architecture and discusses a new paradigm for designing mobile-distributed applications based on a mediator, a distributed intelligent…

  1. Web-based Access to Locally Developed Databases.

    ERIC Educational Resources Information Center

    Mischo, William H.; Schlembach, Mary C.

    1999-01-01

    Describes the Web-based technologies employed by the Grainger Engineering Library Information Center at the University of Illinois, Urbana-Champaign in implementing access to local information resources. Discusses Microsoft Active Server Pages (ASP) technologies and the associated local database structure and format, as well as the general…

  2. Object based data access at the D0 experiment

    SciTech Connect

    Fuess, S.; D0 Collaboration

    1995-11-01

    The D{O} Experiment at Fermilab is currently participating in the FNAL Computing Division`s ``Computing for Analysis Project`` (CAP) to investigate object based data storage and access. Following a short description of the CAP system architecture, the D{O} data model is explored. A brief discussion of the method of operation of the CAP system leads into a concluding section.

  3. Cache-based error recovery for shared memory multiprocessor systems

    NASA Technical Reports Server (NTRS)

    Wu, Kun-Lung; Fuchs, W. Kent; Patel, Janak H.

    1989-01-01

    A multiprocessor cache-based checkpointing and recovery scheme for of recovering from transient processor errors in a shared-memory multiprocessor with private caches is presented. New implementation techniques that use checkpoint identifiers and recovery stacks to reduce performance degradation in processor utilization during normal execution are examined. This cache-based checkpointing technique prevents rollback propagation, provides for rapid recovery, and can be integrated into standard cache coherence protocols. An analytical model is used to estimate the relative performance of the scheme during normal execution. Extensions that take error latency into account are presented.

  4. Code division in optical memory devices based on photon echo

    NASA Astrophysics Data System (ADS)

    Kalachev, Alexey A.; Vlasova, Daria D.

    2006-03-01

    The theory of multi-channel optical memory based on photon echo is developed. It is shown that under long-lived photon echo regime the writing and reading of information with code division is possible using phase modulation of reference and reading pulses. A simple method for construction of a system of noise-like signals, which is based on the segmentation of Frank sequence is proposed. It is shown that in comparison to the system of random biphase signals this system leads to the efficient decreasing of mutual influence of channels and increasing of random/noise ratio under reading of information.

  5. Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

    NASA Technical Reports Server (NTRS)

    Hanna, W. A.; Panagos, P.

    1983-01-01

    This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

  6. The role of the inserted layer in resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Zhang, Dainan; Ma, Guokun; Zhang, Huaiwu; Tang, Xiaoli; Zhong, Zhiyong; Jie, Li; Su, Hua

    2016-07-01

    NiO resistive switching devices were fabricated by reactive DC magnetron sputtering at room temperature containing different inserted layers. From measurements, we demonstrated the filaments were made up by metal Co rather than the oxygen defect or other metal. A current jumping phenomenon in the SET process was observed, evidencing that the filament generating procedure was changed due to the inserted layers. In this process, we demonstrate the current jumping appeared in higher voltage region when the position of inserted layer was close to the bottom electrode. The I-V curves shifted to the positive direction as the thickness of inserted layer increasing. With the change of the number of inserted layers, SET voltages varied while the RESET voltage kept stable. According to the electrochemical metallization memory mechanism, detailed explanations on all the phenomena were addressed. This discovery is supposed of great potentials in the use of designing multi-layer RRAM devices.

  7. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory

    NASA Astrophysics Data System (ADS)

    Dill, Joshua Luchay

    This thesis details two experimental methods for quantifying magnetic tunnel junction behavior, namely write error rates and field modulated spin-torque ferromagnetic resonance. The former examines how reliably an applied spin-transfer torque can excite magnetization dynamics that lead to a reversal of magnetization direction while the latter studies steady state dynamics provided by an oscillating spin-transfer torque. These characterization techniques reveal write error rate behavior for a particular composition magnetic tunnel junction that qualitatively deviates from theoretical predictions. Possible origins of this phenomenon are also investigated with the field modulated spin-torque ferromagnetic resonance technique. By understanding the dynamics of magnetic moments predicted by theory, one can experimentally confirm or disprove these theories in order to accurately model and predict tunnel junction behavior. By having a better model for what factors are important in magnetization dynamics, one can optimize these factors in terms of improving magnetic tunnel junctions for their use as computer memory.

  8. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  9. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

    SciTech Connect

    Lee, Bong-Sub Darmawikarta, Kristof; Abelson, John R.; Raoux, Simone; Shih, Yen-Hao; Zhu, Yu

    2014-02-17

    The nanoscale crystal nuclei in an amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} bit in a phase change memory device were evaluated by fluctuation transmission electron microscopy. The quench time in the device (∼10 ns) afforded more and larger nuclei in the melt-quenched state than in the as-deposited state. However, nuclei were even more numerous and larger in a test structure with a longer quench time (∼100 ns), verifying the prediction of nucleation theory that slower cooling produces more nuclei. It also demonstrates that the thermal design of devices will strongly influence the population of nuclei, and thus the speed and data retention characteristics.

  10. Shape memory-based tunable resistivity of polymer composites

    NASA Astrophysics Data System (ADS)

    Luo, Hongsheng; Zhou, Xingdong; Ma, Yuanyuan; Yi, Guobin; Cheng, Xiaoling; Zhu, Yong; Zu, Xihong; Zhang, Nanjun; Huang, Binghao; Yu, Lifang

    2016-02-01

    A conductive composite in bi-layer structure was fabricated by embedding hybrid nanofillers, namely carbon nanotubes (CNTs) and silver nanoparticles (AgNPs), into a shape memory polyurethane (SMPU). The CNT/AgNP-SMPU composites exhibited a novel tunable conductivity which could be facially tailored in wide range via the compositions or a specifically designed thermo-mechanical shape memory programming. The morphologies of the conductive fillers and the composites were investigated by scanning electron microscope (SEM). The mechanical and thermal measurements were performed by tensile tests and differential scanning calorimetry (DSC). By virtue of a specifically explored shape memory programming, the composites were stretched and fixed into different temporary states. The electrical resistivity (Rs) varied accordingly, which was able to be stabilized along with the shape fixing. Theoretical prediction based upon the tunneling model was performed. The Rs-strain curves of the composites with different compositions were well fitted. Furthermore, the relative resistivity and the Gauge factor along with the elongation were calculated. The influence of the compositions on the strain-dependent Rs was disclosed. The findings provided a new avenue to tailor the conductivity of the polymeric nano-composites by combining the composition method and a thermo-mechanical programming, which may greatly benefit the application of intelligent polymers in flexible electronics and sensors fields.

  11. Integrated Optical Memory Based on Laser-Written Waveguides

    NASA Astrophysics Data System (ADS)

    Corrielli, Giacomo; Seri, Alessandro; Mazzera, Margherita; Osellame, Roberto; de Riedmatten, Hugues

    2016-05-01

    We propose and demonstrate a physical platform for the realization of integrated photonic memories based on laser-written waveguides in rare-earth-doped crystals. Using femtosecond-laser micromachining, we fabricate waveguides in Pr3 +∶Y2SiO5 crystal. We demonstrate that the waveguide inscription does not affect the coherence properties of the material and that the light confinement in the waveguide increases the interaction with the active ions by a factor of 6. We also demonstrate that analogous to the bulk crystals, we can operate the optical pumping protocols necessary to prepare the population in atomic-frequency combs that we use to demonstrate light storage in excited and spin states of the Praseodymium ions. Our results represent a realization of laser-written waveguides in a Pr3 +∶Y2SiO5 crystal and an implementation of an integrated on-demand spin-wave optical memory. They open perspectives for integrated quantum memories.

  12. The effect of visual salience on memory-based choices.

    PubMed

    Pooresmaeili, Arezoo; Bach, Dominik R; Dolan, Raymond J

    2014-02-01

    Deciding whether a stimulus is the "same" or "different" from a previous presented one involves integrating among the incoming sensory information, working memory, and perceptual decision making. Visual selective attention plays a crucial role in selecting the relevant information that informs a subsequent course of action. Previous studies have mainly investigated the role of visual attention during the encoding phase of working memory tasks. In this study, we investigate whether manipulation of bottom-up attention by changing stimulus visual salience impacts on later stages of memory-based decisions. In two experiments, we asked subjects to identify whether a stimulus had either the same or a different feature to that of a memorized sample. We manipulated visual salience of the test stimuli by varying a task-irrelevant feature contrast. Subjects chose a visually salient item more often when they looked for matching features and less often so when they looked for a nonmatch. This pattern of results indicates that salient items are more likely to be identified as a match. We interpret the findings in terms of capacity limitations at a comparison stage where a visually salient item is more likely to exhaust resources leading it to be prematurely parsed as a match.

  13. Damping capacity of TiNi-based shape memory alloys

    NASA Astrophysics Data System (ADS)

    Rong, L. J.; Jiang, H. C.; Liu, S. W.; Zhao, X. Q.

    2007-07-01

    Damping capacity is another primary characteristic of shape memory alloys (SMA) besides shape memory effect and superelasticity. Damping behavior of Ti-riched TiNi SMA, porous TiNi SMA and a novel TiNi/AlSi composite have been investigated using dynamic mechanical analyzer (DMA) in this investigation. All these alloys are in martensitic state at room temperature and thus possess the high potential application value. Ti 50.2Ni 49.8 SMA has better damping capacity in pure martensitic state and phase transformation region due to the motion of martensite twin interface. As a kind of promising material for effective dampers and shock absorbing devices, porous TiNi SMA can exhibit higher damping capacity than the dense one due to the existence of the three-dimensioned connecting pore structure. It is found that the internal friction of porous TiNi SMA mainly originates from microplastic deformation and mobility of martensite interface and increases with the increase of the porosity. A novel TiNi/AlSi composite has been developed successfully by infiltrating AlSi alloy into the open pores of porous TiNi alloy with 60% porosity through compression casting. It shows the same phase transformation characteristics as the porous TiNi alloy. The damping capacity of the composite has been increased and the compressive strength has been also promoted remarkably. Suggestions for developing higher damping alloys based on TiNi shape memory alloy are proposed in this paper.

  14. Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory

    NASA Astrophysics Data System (ADS)

    Kang, Seung-Kuk; Rhie, Hyoung-Seub; Kim, Hyun-Ho; Koo, Bon-Jae; Joo, Heung-Jin; Park, Jung-Hun; Kang, Young-Min; Choi, Do-Hyun; Lee, Sung-Young; Jeong, Hong-Sik; Kim, Kinam

    2005-04-01

    We developed ferroelectric random access memory (FRAM)-embedded smartcards in which FRAM replaces electrically erasable PROM (EEPROM) and static random access memory (SRAM) to improve the read/write cycle time and endurance of data memories during operation, in which the main time delay retardation observed in EEPROM embedded smartcards occurs because of slow data update time. EEPROM-embedded smartcards have EEPROM, ROM, and SRAM. To utilize FRAM-embedded smartcards, we should integrate submicron ferroelectric capacitors into embedded logic complementary metal oxide semiconductor (CMOS) without the degradation of the ferroelectric properties. We resolved this process issue from the viewpoint of the back end of line (BEOL) process. As a result, we realized a highly reliable sensing window for FRAM-embedded smartcards that were realized by novel integration schemes such as tungsten and barrier metal (BM) technology, multilevel encapsulating (EBL) layer scheme and optimized intermetallic dielectrics (IMD) technology.

  15. How brain oscillations form memories--a processing based perspective on oscillatory subsequent memory effects.

    PubMed

    Hanslmayr, Simon; Staudigl, Tobias

    2014-01-15

    Brain oscillations are increasingly recognized by memory researchers as a useful tool to unravel the neural mechanisms underlying the formation of a memory trace. However, the increasing numbers of published studies paint a rather complex picture of the relation between brain oscillations and memory formation. Concerning oscillatory amplitude, for instance, increases as well as decreases in various frequency bands (theta, alpha, beta and gamma) were associated with memory formation. These results cast doubt on frameworks putting forward the idea of an oscillatory signature that is uniquely related to memory formation. In an attempt to clarify this issue we here provide an alternative perspective, derived from classic cognitive frameworks/principles of memory. On the basis of Craik's levels of processing framework and Tulving's encoding specificity principle we hypothesize that brain oscillations during encoding might primarily reflect the perceptual and cognitive processes engaged by the encoding task. These processes may then lead to later successful retrieval depending on their overlap with the processes engaged by the memory test. As a consequence, brain oscillatory correlates of memory formation could vary dramatically depending on how the memory is encoded, and on how it is being tested later. Focusing on oscillatory amplitude changes and on theta-to-gamma cross-frequency coupling, we here review recent evidence showing how brain oscillatory subsequent memory effects can be modulated, and sometimes even be reversed, by varying encoding tasks, and the contextual overlap between encoding and retrieval.

  16. Neural Mechanisms of Time-Based Prospective Memory: Evidence for Transient Monitoring

    PubMed Central

    Oksanen, Kevin M.; Waldum, Emily R.; McDaniel, Mark A.; Braver, Todd S.

    2014-01-01

    In daily life, we often need to remember to perform an action after, or at, a specific period of time (e.g., take pizza out of oven in 15 minutes). Surprisingly, little is known about the neural mechanisms that support this form of memory, termed time-based prospective memory (PM). Here we pioneer an fMRI paradigm that enables examination of both sustained and transient processes engaged during time-based PM. Participants were scanned while performing a demanding on-going task (n-back working memory), with and without an additional time-based PM demand. During the PM condition participants could access a hidden clock with a specific button-press response, while in the control condition, pseudo-clocks randomly appeared and were removed via the same response. Analyses tested for sustained activation associated with the PM condition, and also transient activation associated with clock-checks and the PM target response. Contrary to prior findings with event-based PM (i.e., remembering to perform a future action when a specific event occurs), no sustained PM-related activity was observed in anterior prefrontal cortex (aPFC) or elsewhere in the brain; instead, transient clock-related activity was observed in this region. Critically, the activation was anticipatory, increasing before clock-check responses. Anticipatory activity prior to the PM target response was weaker in aPFC, but strong in pre-Supplementary Motor Area (pre-SMA; relative to clock-check responses), suggesting a functional double dissociation related to volitional decision-making. Together, the results suggest that aPFC-activity dynamics during time-based PM reflect a distinct transient monitoring process, enabling integration of the PM intention with current temporal information to facilitate scheduling of upcoming PM-related actions. PMID:24643226

  17. Neural mechanisms of time-based prospective memory: evidence for transient monitoring.

    PubMed

    Oksanen, Kevin M; Waldum, Emily R; McDaniel, Mark A; Braver, Todd S

    2014-01-01

    In daily life, we often need to remember to perform an action after, or at, a specific period of time (e.g., take pizza out of oven in 15 minutes). Surprisingly, little is known about the neural mechanisms that support this form of memory, termed time-based prospective memory (PM). Here we pioneer an fMRI paradigm that enables examination of both sustained and transient processes engaged during time-based PM. Participants were scanned while performing a demanding on-going task (n-back working memory), with and without an additional time-based PM demand. During the PM condition participants could access a hidden clock with a specific button-press response, while in the control condition, pseudo-clocks randomly appeared and were removed via the same response. Analyses tested for sustained activation associated with the PM condition, and also transient activation associated with clock-checks and the PM target response. Contrary to prior findings with event-based PM (i.e., remembering to perform a future action when a specific event occurs), no sustained PM-related activity was observed in anterior prefrontal cortex (aPFC) or elsewhere in the brain; instead, transient clock-related activity was observed in this region. Critically, the activation was anticipatory, increasing before clock-check responses. Anticipatory activity prior to the PM target response was weaker in aPFC, but strong in pre-Supplementary Motor Area (pre-SMA; relative to clock-check responses), suggesting a functional double dissociation related to volitional decision-making. Together, the results suggest that aPFC-activity dynamics during time-based PM reflect a distinct transient monitoring process, enabling integration of the PM intention with current temporal information to facilitate scheduling of upcoming PM-related actions. PMID:24643226

  18. Novel Field Effect Diode Type Vertical Capacitorless One Transistor Dynamic Random Access Memory Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

    NASA Astrophysics Data System (ADS)

    Imamoto, Takuya; Endoh, Tetsuo

    2013-04-01

    In this paper, the novel field effect diode (FED) type vertical capacitorless one transistor dynamic random access memory (1T-DRAM) cell with negative hold bit line (BL) voltage (VBL) scheme is proposed. In comparison with the conventional planar type, the proposed vertical type with negative hold VBL scheme shows excellent static and disturb retention time. The proposed vertical type memory cell with negative hold VBL scheme achieves 1,000 times longer static retention time and 104 times longer BL disturb retention time at 85 °C than that of the conventional planar type. Furthermore, the proposed vertical type memory cell has a small cell size of 4F2 due to its stacked vertical structure. The proposed FED type vertical capacitorless 1T-DRAM cell with negative hold VBL scheme is shown to be an excellent candidate for stand-alone and embedded memory applications and extends scaling limitations.

  19. Content-addressable memory based enforcement of configurable policies

    DOEpatents

    Berg, Michael J

    2014-05-06

    A monitoring device for monitoring transactions on a bus includes content-addressable memory ("CAM") and a response policy unit. The CAM includes an input coupled to receive a bus transaction tag based on bus traffic on the bus. The CAM stores data tags associated with rules of a security policy to compare the bus transaction tag to the data tags. The CAM generates an output signal indicating whether one or more matches occurred. The response policy unit is coupled to the CAM to receive the output signal from the CAM and to execute a policy action in response to the output signal.

  20. Characteristics of HfO2/Hf-based bipolar resistive memories

    NASA Astrophysics Data System (ADS)

    Jinshun, Bi; Zhengsheng, Han

    2015-06-01

    Nano-scale Hf/HfO2-based resistive random-access-memory (RRAM) devices were fabricated. The cross-over between top and bottom electrodes of RRAM forms the metal-insulator-metal sandwich structure. The electrical responses of RRAM are studied in detail, including forming process, SET process and RESET process. The correlations between SET voltage and RESET voltage, high resistance state and low resistance state are discussed. The electrical characteristics of RRAM are in a strong relationship with the compliance current in the SET process. The conduction mechanism of nano-scale Hf/HfO2-based RRAM can be explained by the quantum point contact model. Project supported by the National Natural Science Foundation of China (Nos. 11179003, 61176095).

  1. An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

    NASA Technical Reports Server (NTRS)

    Rao, Vikram; Patel, Jagdish; Patel, Janak; Namkung, Jeffrey

    2001-01-01

    Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

  2. A Rewritable, Random-Access DNA-Based Storage System

    NASA Astrophysics Data System (ADS)

    Tabatabaei Yazdi, S. M. Hossein; Yuan, Yongbo; Ma, Jian; Zhao, Huimin; Milenkovic, Olgica

    2015-09-01

    We describe the first DNA-based storage architecture that enables random access to data blocks and rewriting of information stored at arbitrary locations within the blocks. The newly developed architecture overcomes drawbacks of existing read-only methods that require decoding the whole file in order to read one data fragment. Our system is based on new constrained coding techniques and accompanying DNA editing methods that ensure data reliability, specificity and sensitivity of access, and at the same time provide exceptionally high data storage capacity. As a proof of concept, we encoded parts of the Wikipedia pages of six universities in the USA, and selected and edited parts of the text written in DNA corresponding to three of these schools. The results suggest that DNA is a versatile media suitable for both ultrahigh density archival and rewritable storage applications.

  3. A Rewritable, Random-Access DNA-Based Storage System.

    PubMed

    Yazdi, S M Hossein Tabatabaei; Yuan, Yongbo; Ma, Jian; Zhao, Huimin; Milenkovic, Olgica

    2015-01-01

    We describe the first DNA-based storage architecture that enables random access to data blocks and rewriting of information stored at arbitrary locations within the blocks. The newly developed architecture overcomes drawbacks of existing read-only methods that require decoding the whole file in order to read one data fragment. Our system is based on new constrained coding techniques and accompanying DNA editing methods that ensure data reliability, specificity and sensitivity of access, and at the same time provide exceptionally high data storage capacity. As a proof of concept, we encoded parts of the Wikipedia pages of six universities in the USA, and selected and edited parts of the text written in DNA corresponding to three of these schools. The results suggest that DNA is a versatile media suitable for both ultrahigh density archival and rewritable storage applications. PMID:26382652

  4. Type-Based Access Control in Data-Centric Systems

    NASA Astrophysics Data System (ADS)

    Caires, Luís; Pérez, Jorge A.; Seco, João Costa; Vieira, Hugo Torres; Ferrão, Lúcio

    Data-centric multi-user systems, such as web applications, require flexible yet fine-grained data security mechanisms. Such mechanisms are usually enforced by a specially crafted security layer, which adds extra complexity and often leads to error prone coding, easily causing severe security breaches. In this paper, we introduce a programming language approach for enforcing access control policies to data in data-centric programs by static typing. Our development is based on the general concept of refinement type, but extended so as to address realistic and challenging scenarios of permission-based data security, in which policies dynamically depend on the database state, and flexible combinations of column- and row-level protection of data are necessary. We state and prove soundness and safety of our type system, stating that well-typed programs never break the declared data access control policies.

  5. A Rewritable, Random-Access DNA-Based Storage System.

    PubMed

    Yazdi, S M Hossein Tabatabaei; Yuan, Yongbo; Ma, Jian; Zhao, Huimin; Milenkovic, Olgica

    2015-09-18

    We describe the first DNA-based storage architecture that enables random access to data blocks and rewriting of information stored at arbitrary locations within the blocks. The newly developed architecture overcomes drawbacks of existing read-only methods that require decoding the whole file in order to read one data fragment. Our system is based on new constrained coding techniques and accompanying DNA editing methods that ensure data reliability, specificity and sensitivity of access, and at the same time provide exceptionally high data storage capacity. As a proof of concept, we encoded parts of the Wikipedia pages of six universities in the USA, and selected and edited parts of the text written in DNA corresponding to three of these schools. The results suggest that DNA is a versatile media suitable for both ultrahigh density archival and rewritable storage applications.

  6. Using real-estate-based financing to access capital.

    PubMed

    Tobin, W C; Kryzaniak, L A

    1998-07-01

    One strategy employed by healthcare organizations to increase their market presence is the construction of new facilities. Accessing capital to fund such construction, however, has become more of a challenge. One relatively untapped source of building capital is real-estate-based financing. Nonrecourse mortgages, turnkey net leases, and synthetic leases can provide several advantages to healthcare organizations seeking capital, assuming issues related to building ownership, debt and balance sheet effects, and tax-exempt status have been thoroughly explored first.

  7. Are survival processing memory advantages based on ancestral priorities?

    PubMed

    Soderstrom, Nicholas C; McCabe, David P

    2011-06-01

    Recent research has suggested that our memory systems are especially tuned to process information according to its survival relevance, and that inducing problems of "ancestral priorities" faced by our ancestors should lead to optimal recall performance (Nairne & Pandeirada, Cognitive Psychology, 2010). The present study investigated the specificity of this idea by comparing an ancestor-consistent scenario and a modern survival scenario that involved threats that were encountered by human ancestors (e.g., predators) or threats from fictitious creatures (i.e., zombies). Participants read one of four survival scenarios in which the environment and the explicit threat were either consistent or inconsistent with ancestrally based problems (i.e., grasslands-predators, grasslands-zombies, city-attackers, city-zombies), or they rated words for pleasantness. After rating words based on their survival relevance (or pleasantness), the participants performed a free recall task. All survival scenarios led to better recall than did pleasantness ratings, but recall was greater when zombies were the threat, as compared to predators or attackers. Recall did not differ for the modern (i.e., city) and ancestral (i.e., grasslands) scenarios. These recall differences persisted when valence and arousal ratings for the scenarios were statistically controlled as well. These data challenge the specificity of ancestral priorities in survival-processing advantages in memory.

  8. Are survival processing memory advantages based on ancestral priorities?

    PubMed

    Soderstrom, Nicholas C; McCabe, David P

    2011-06-01

    Recent research has suggested that our memory systems are especially tuned to process information according to its survival relevance, and that inducing problems of "ancestral priorities" faced by our ancestors should lead to optimal recall performance (Nairne & Pandeirada, Cognitive Psychology, 2010). The present study investigated the specificity of this idea by comparing an ancestor-consistent scenario and a modern survival scenario that involved threats that were encountered by human ancestors (e.g., predators) or threats from fictitious creatures (i.e., zombies). Participants read one of four survival scenarios in which the environment and the explicit threat were either consistent or inconsistent with ancestrally based problems (i.e., grasslands-predators, grasslands-zombies, city-attackers, city-zombies), or they rated words for pleasantness. After rating words based on their survival relevance (or pleasantness), the participants performed a free recall task. All survival scenarios led to better recall than did pleasantness ratings, but recall was greater when zombies were the threat, as compared to predators or attackers. Recall did not differ for the modern (i.e., city) and ancestral (i.e., grasslands) scenarios. These recall differences persisted when valence and arousal ratings for the scenarios were statistically controlled as well. These data challenge the specificity of ancestral priorities in survival-processing advantages in memory. PMID:21327372

  9. Why does lag affect the durability of memory-based automaticity: loss of memory strength or interference?

    PubMed

    Wilkins, Nicolas J; Rawson, Katherine A

    2013-10-01

    In Rickard, Lau, and Pashler's (2008) investigation of the lag effect on memory-based automaticity, response times were faster and proportion of trials retrieved was higher at the end of practice for short lag items than for long lag items. However, during testing after a delay, response times were slower and proportion of trials retrieved was lower for short lag items than for long lag items. The current study investigated the extent to which the lag effect on the durability of memory-based automaticity is due to interference or to the loss of memory strength with time. Participants repeatedly practiced alphabet subtraction items in short lag and long lag conditions. After practice, half of the participants were immediately tested and the other half were tested after a 7-day delay. Results indicate that the lag effect on the durability of memory-based automaticity is primarily due to interference. We discuss potential modification of current memory-based processing theories to account for these effects. PMID:24012722

  10. Access Control of Cloud Service Based on UCON

    NASA Astrophysics Data System (ADS)

    Danwei, Chen; Xiuli, Huang; Xunyi, Ren

    Cloud computing is an emerging computing paradigm, and cloud service is also becoming increasingly relevant. Most research communities have recently embarked in the area, and research challenges in every aspect. This paper mainly discusses cloud service security. Cloud service is based on Web Services, and it will face all kinds of security problems including what Web Services face. The development of cloud service closely relates to its security, so the research of cloud service security is a very important theme. This paper introduces cloud computing and cloud service firstly, and then gives cloud services access control model based on UCON and negotiation technologies, and also designs the negotiation module.

  11. Comparing implicit and explicit semantic access of direct and indirect word pairs in schizophrenia to evaluate models of semantic memory.

    PubMed

    Neill, Erica; Rossell, Susan Lee

    2013-02-28

    Semantic memory deficits in schizophrenia (SZ) are profound, yet there is no research comparing implicit and explicit semantic processing in the same participant sample. In the current study, both implicit and explicit priming are investigated using direct (LION-TIGER) and indirect (LION-STRIPES; where tiger is not displayed) stimuli comparing SZ to healthy controls. Based on a substantive review (Rossell and Stefanovic, 2007) and meta-analysis (Pomarol-Clotet et al., 2008), it was predicted that SZ would be associated with increased indirect priming implicitly. Further, it was predicted that SZ would be associated with abnormal indirect priming explicitly, replicating earlier work (Assaf et al., 2006). No specific hypotheses were made for implicit direct priming due to the heterogeneity of the literature. It was hypothesised that explicit direct priming would be intact based on the structured nature of this task. The pattern of results suggests (1) intact reaction time (RT) and error performance implicitly in the face of abnormal direct priming and (2) impaired RT and error performance explicitly. This pattern confirms general findings regarding implicit/explicit memory impairments in SZ whilst highlighting the unique pattern of performance specific to semantic priming. Finally, priming performance is discussed in relation to thought disorder and length of illness.

  12. Tag Content Access Control with Identity-based Key Exchange

    NASA Astrophysics Data System (ADS)

    Yan, Liang; Rong, Chunming

    2010-09-01

    Radio Frequency Identification (RFID) technology that used to identify objects and users has been applied to many applications such retail and supply chain recently. How to prevent tag content from unauthorized readout is a core problem of RFID privacy issues. Hash-lock access control protocol can make tag to release its content only to reader who knows the secret key shared between them. However, in order to get this shared secret key required by this protocol, reader needs to communicate with a back end database. In this paper, we propose to use identity-based secret key exchange approach to generate the secret key required for hash-lock access control protocol. With this approach, not only back end database connection is not needed anymore, but also tag cloning problem can be eliminated at the same time.

  13. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    SciTech Connect

    Munira, Kamaram; Visscher, P. B.

    2015-05-07

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  14. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

    NASA Astrophysics Data System (ADS)

    Dawson, J. A.; Guo, Y.; Robertson, J.

    2015-09-01

    Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.

  15. Vividness of Visual Imagery and Incidental Recall of Verbal Cues, When Phenomenological Availability Reflects Long-Term Memory Accessibility

    PubMed Central

    D’Angiulli, Amedeo; Runge, Matthew; Faulkner, Andrew; Zakizadeh, Jila; Chan, Aldrich; Morcos, Selvana

    2013-01-01

    The relationship between vivid visual mental images and unexpected recall (incidental recall) was replicated, refined, and extended. In Experiment 1, participants were asked to generate mental images from imagery-evoking verbal cues (controlled on several verbal properties) and then, on a trial-by-trial basis, rate the vividness of their images; 30 min later, participants were surprised with a task requiring free recall of the cues. Higher vividness ratings predicted better incidental recall of the cues than individual differences (whose effect was modest). Distributional analysis of image latencies through ex-Gaussian modeling showed an inverse relation between vividness and latency. However, recall was unrelated to image latency. The follow-up Experiment 2 showed that the processes underlying trial-by-trial vividness ratings are unrelated to the Vividness of Visual Imagery Questionnaire (VVIQ), as further supported by a meta-analysis of a randomly selected sample of relevant literature. The present findings suggest that vividness may act as an index of availability of long-term sensory traces, playing a non-epiphenomenal role in facilitating the access of those memories. PMID:23382719

  16. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

    SciTech Connect

    Dawson, J. A. Guo, Y.; Robertson, J.

    2015-09-21

    Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.

  17. Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode

    PubMed Central

    Kinoshita, Kentaro; Koh, Sang-Gyu; Moriyama, Takumi; Kishida, Satoru

    2015-01-01

    Although the presence of an oxygen reservoir (OR) is assumed in many models that explain resistive switching of resistive random access memory (ReRAM) with electrode/metal oxide (MO)/electrode structures, the location of OR is not clear. We have previously reported a method, which involved the use of an AFM cantilever, for preparing an extremely small ReRAM cell that has a removable bottom electrode (BE). In this study, we used this cell structure to specify the location of OR. Because an anode is often assumed to work as OR, we investigated the effect of changing anodes without changing the MO layer and the cathode on the occurrence of reset. It was found that the reset occurred independently of the catalytic ability and Gibbs free energy (ΔG) of the anode. Our proposed structure enabled to determine that the reset was caused by repairing oxygen vacancies of which a filament consists due to the migration of oxygen ions from the surrounding area when high ΔG anode metal is used, whereas by oxidizing the anode due to the migration of oxygen ions from the MO layer when low ΔG anode metal is used, suggesting the location of OR depends on ΔG of the anode. PMID:26689682

  18. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    SciTech Connect

    Pandey, Sumeet C. Meade, Roy; Sandhu, Gurtej S.

    2015-02-07

    We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  19. Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

    NASA Astrophysics Data System (ADS)

    Lin, Cheng-Li; Chang, Wei-Yi; Huang, Yen-Lun; Juan, Pi-Chun; Wang, Tse-Wen; Hung, Ke-Yu; Hsieh, Cheng-Yu; Kang, Tsung-Kuei; Shi, Jen-Bin

    2015-04-01

    In this work, we investigate the characteristics of ZnO resistive random access memory (RRAM) with a reduced graphene oxide (rGO) capping layer and the polarity effect of the SET/RESET bias on the RRAM. The rGO film insertion enhances the stability of the current-voltage (I-V) switching curve and the superior resistance ratio (˜105) of high-resistance state (HRS) to low-resistance state (LRS). Using the appropriate polarity of the SET/RESET bias applied to the rGO-capped ZnO RRAM enables the oxygen ions to move mainly at the interface of the rGO and ZnO films, resulting in the best performance. Presumably, the rGO film acts as an oxygen reservoir and enhances the easy in and out motion of the oxygen ions from the rGO film. The rGO film also prevents the interaction of oxygen ions and the Al electrode, resulting in excellent performance. In a pulse endurance test, the rGO-capped ZnO RRAM reveals superior endurance of up to 108 cycles over that of the ZnO RRAM without rGO insertion (106 cycles).

  20. Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures

    NASA Astrophysics Data System (ADS)

    Yao, Jun

    Silicon oxide (SiOx 1 < x ≦2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiOx in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiOx matrix, the intrinsic switching picture in SiOx is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiOx substrates, providing indirect evidence to the intrinsic SiOx switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiOx. By localization of the switching site, the conducting filament in SiOx is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiOx is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).

  1. A Shape Memory Alloy Based Cryogenic Thermal Conduction Switch

    NASA Astrophysics Data System (ADS)

    Krishnan, V. B.; Singh, J. D.; Woodruff, T. R.; Notardonato, W. U.; Vaidyanathan, R.

    2004-06-01

    Shape memory alloys (SMAs) can produce large strains when deformed (e.g., up to 8%). Heating results in a phase transformation and associated recovery of all the accumulated strain. This strain recovery can occur against large forces, resulting in their use as actuators. Thus an SMA element can integrate both sensory and actuation functions, by inherently sensing a change in temperature and actuating by undergoing a shape change as a result of a temperature-induced phase transformation. Two aspects of our work on cryogenic SMAs are addressed here. First — a shape memory alloy based cryogenic thermal conduction switch for operation between dewars of liquid methane and liquid oxygen in a common bulkhead arrangement is discussed. Such a switch integrates the sensor element and the actuator element and can be used to create a variable thermal sink to other cryogenic tanks for liquefaction, densification, and zero boil-off systems for advanced spaceport applications. Second — fabrication via arc-melting and subsequent materials testing of SMAs with cryogenic transformation temperatures for use in the aforementioned switch is discussed.

  2. A Shape Memory Alloy Based Cryogenic Thermal Conduction Switch

    SciTech Connect

    Krishnan, V.B.; Singh, J.D.; Woodruff, T.R.; Vaidyanathan, R.; Notardonato, W.U.

    2004-06-28

    Shape memory alloys (SMAs) can produce large strains when deformed (e.g., up to 8%). Heating results in a phase transformation and associated recovery of all the accumulated strain. This strain recovery can occur against large forces, resulting in their use as actuators. Thus an SMA element can integrate both sensory and actuation functions, by inherently sensing a change in temperature and actuating by undergoing a shape change as a result of a temperature-induced phase transformation. Two aspects of our work on cryogenic SMAs are addressed here. First - a shape memory alloy based cryogenic thermal conduction switch for operation between dewars of liquid methane and liquid oxygen in a common bulkhead arrangement is discussed. Such a switch integrates the sensor element and the actuator element and can be used to create a variable thermal sink to other cryogenic tanks for liquefaction, densification, and zero boil-off systems for advanced spaceport applications. Second - fabrication via arc-melting and subsequent materials testing of SMAs with cryogenic transformation temperatures for use in the aforementioned switch is discussed.

  3. A Shape Memory Alloy Based Cryogenic Thermal Conduction Switch

    NASA Technical Reports Server (NTRS)

    Notardonato, W. U.; Krishnan, V. B.; Singh, J. D.; Woodruff, T. R.; Vaidyanathan, R.

    2005-01-01

    Shape memory alloys (SMAs) can produce large strains when deformed (e.g., up to 8%). Heating results in a phase transformation and associated recovery of all the accumulated strain. This strain recovery can occur against large forces, resulting in their use as actuators. Thus an SMA element can integrate both sensory and actuation functions, by inherently sensing a change in temperature and actuating by undergoing a shape change as a result of a temperature-induced phase transformation. Two aspects of our work on cryogenic SMAs are addressed here. First - a shape memory alloy based cryogenic thermal conduction switch for operation between dewars of liquid methane and liquid oxygen in a common bulkhead arrangement is discussed. Such a switch integrates the sensor element and the actuator element and can be used to create a variable thermal sink to other cryogenic tanks for liquefaction, densification, and zero boil-off systems for advanced spaceport applications. Second - fabrication via arc-melting and subsequent materials testing of SMAs with cryogenic transformation temperatures for use in the aforementioned switch is discussed.

  4. Disentangling the effect of event-based cues on children's time-based prospective memory performance.

    PubMed

    Redshaw, Jonathan; Henry, Julie D; Suddendorf, Thomas

    2016-10-01

    Previous time-based prospective memory research, both with children and with other groups, has measured the ability to perform an action with the arrival of a time-dependent yet still event-based cue (e.g., the occurrence of a specific clock pattern) while also engaged in an ongoing activity. Here we introduce a novel means of operationalizing time-based prospective memory and assess children's growing capacities when the availability of an event-based cue is varied. Preschoolers aged 3, 4, and 5years (N=72) were required to ring a bell when a familiar 1-min sand timer had completed a cycle under four conditions. In a 2×2 within-participants design, the timer was either visible or hidden and was either presented in the context of a single task or embedded within a dual picture-naming task. Children were more likely to ring the bell before 2min had elapsed in the visible-timer and single-task conditions, with performance improving with age across all conditions. These results suggest a divergence in the development of time-based prospective memory in the presence versus absence of event-based cues, and they also suggest that performance on typical time-based tasks may be partly driven by event-based prospective memory. PMID:27295204

  5. Disentangling the effect of event-based cues on children's time-based prospective memory performance.

    PubMed

    Redshaw, Jonathan; Henry, Julie D; Suddendorf, Thomas

    2016-10-01

    Previous time-based prospective memory research, both with children and with other groups, has measured the ability to perform an action with the arrival of a time-dependent yet still event-based cue (e.g., the occurrence of a specific clock pattern) while also engaged in an ongoing activity. Here we introduce a novel means of operationalizing time-based prospective memory and assess children's growing capacities when the availability of an event-based cue is varied. Preschoolers aged 3, 4, and 5years (N=72) were required to ring a bell when a familiar 1-min sand timer had completed a cycle under four conditions. In a 2×2 within-participants design, the timer was either visible or hidden and was either presented in the context of a single task or embedded within a dual picture-naming task. Children were more likely to ring the bell before 2min had elapsed in the visible-timer and single-task conditions, with performance improving with age across all conditions. These results suggest a divergence in the development of time-based prospective memory in the presence versus absence of event-based cues, and they also suggest that performance on typical time-based tasks may be partly driven by event-based prospective memory.

  6. Qualitative Characteristics of Memories for Real, Imagined, and Media-Based Events

    ERIC Educational Resources Information Center

    Gordon, Ruthanna; Gerrig, Richard J.; Franklin, Nancy

    2009-01-01

    People's memories must be able to represent experiences with multiple types of origins--including the real world and our own imaginations, but also printed texts (prose-based media), movies, and television (screen-based media). This study was intended to identify cues that distinguish prose- and screen-based media memories from each other, as well…

  7. Superlattice-like film for high data retention and high speed phase change random access memory

    NASA Astrophysics Data System (ADS)

    Li, Le; Song, Sannian; Zhang, Zhonghua; Chen, Liangliang; Song, Zhitang; Lv, Shilong; Liu, Bo; Guo, Tianqi

    2016-06-01

    Superlattice-like film (SLF) was formed alternately by Ti0.43Sb2Te3 (TST) and TiN, and TST is employed as phase change layers and TiN is employed as isolation layers of TST film. Comparing with single TST film with the same thickness, SLF owns higher data retention, higher phase change speed (5 ns) and endurance up to 1 × 105 cycles, and its power consumption of reset operation is significantly decreased by 65.2%. Two-dimensional thermal transient simulation of reset operation indicates that SLF-based device owns higher heating efficiency than 30-nm-thick TST-based device.

  8. [Prospective memory - concepts, methods of assessment, neuroanatomical bases and its deficits in mental disorders].

    PubMed

    Wiłkość, Monika; Izdebski, Paweł; Zajac-Lamparska, Ludmiła

    2013-01-01

    In the last two decades of the last century there has been a shift in the studies on memory. In psychology of memory the criticism of the laboratory approach resulted in development of the ecological approach. One of the effects of this change was to initiate researches on memory that includes plans for the future, which has resulted in the distinction of the concept of prospective memory. Prospective memory is used in many aspects of everyday life. It deals with remembering intentions and plans, it is connected with remembering about specific task or activity in the future. There are three types of PM: event-based prospective memory, time-based prospective memory and activity-based prospective memory. Current research in this field have already established its own paradigm and tools measuring PM and there is still increasing scientific interest in this issue. Prospective memory assessment may be carried out in various ways. Among them, the most frequently used are: a) questionnaires, b) psychological tests, c) experimental procedures. Within the latter, the additional distinction can be introduced for: the experiments conducted under natural conditions and the laboratory procedures. In Polish literature, there are only a few articles on PM. The aim of this work is to review studies on assessment methods of PM. Its neuroanatomical bases and its functioning in different mental disorders are analyzed. The work is aimed to focus clinicians attention on prospective memory as an area which is important for complex diagnosis of cognitive processes.

  9. Development of a statistically based access delay timeline methodology.

    SciTech Connect

    Rivera, W. Gary; Robinson, David Gerald; Wyss, Gregory Dane; Hendrickson, Stacey M. Langfitt

    2013-02-01

    The charter for adversarial delay is to hinder access to critical resources through the use of physical systems increasing an adversarys task time. The traditional method for characterizing access delay has been a simple model focused on accumulating times required to complete each task with little regard to uncertainty, complexity, or decreased efficiency associated with multiple sequential tasks or stress. The delay associated with any given barrier or path is further discounted to worst-case, and often unrealistic, times based on a high-level adversary, resulting in a highly conservative calculation of total delay. This leads to delay systems that require significant funding and personnel resources in order to defend against the assumed threat, which for many sites and applications becomes cost prohibitive. A new methodology has been developed that considers the uncertainties inherent in the problem to develop a realistic timeline distribution for a given adversary path. This new methodology incorporates advanced Bayesian statistical theory and methodologies, taking into account small sample size, expert judgment, human factors and threat uncertainty. The result is an algorithm that can calculate a probability distribution function of delay times directly related to system risk. Through further analysis, the access delay analyst or end user can use the results in making informed decisions while weighing benefits against risks, ultimately resulting in greater system effectiveness with lower cost.

  10. Open access for ALICE analysis based on virtualization technology

    NASA Astrophysics Data System (ADS)

    Buncic, P.; Gheata, M.; Schutz, Y.

    2015-12-01

    Open access is one of the important leverages for long-term data preservation for a HEP experiment. To guarantee the usability of data analysis tools beyond the experiment lifetime it is crucial that third party users from the scientific community have access to the data and associated software. The ALICE Collaboration has developed a layer of lightweight components built on top of virtualization technology to hide the complexity and details of the experiment-specific software. Users can perform basic analysis tasks within CernVM, a lightweight generic virtual machine, paired with an ALICE specific contextualization. Once the virtual machine is launched, a graphical user interface is automatically started without any additional configuration. This interface allows downloading the base ALICE analysis software and running a set of ALICE analysis modules. Currently the available tools include fully documented tutorials for ALICE analysis, such as the measurement of strange particle production or the nuclear modification factor in Pb-Pb collisions. The interface can be easily extended to include an arbitrary number of additional analysis modules. We present the current status of the tools used by ALICE through the CERN open access portal, and the plans for future extensions of this system.

  11. The ARAC client system: network-based access to ARAC

    SciTech Connect

    Leach, M J; Sumikawa, D; Webster, C

    1999-07-12

    The ARAC Client System allows users (such as emergency managers and first responders) with commonly available desktop and laptop computers to utilize the central ARAC system over the Internet or any other communications link using Internet protocols. Providing cost-effective fast access to the central ARAC system greatly expands the availability of the ARAC capability. The ARAC Client system consists of (1) local client applications running on the remote user's computer, and (2) ''site servers'' that provide secure access to selected central ARAC system capabilities and run on a scalable number of dedicated workstations residing at the central facility. The remote client applications allow users to describe a real or potential them-bio event, electronically sends this information to the central ARAC system which performs model calculations, and quickly receive and visualize the resulting graphical products. The site servers will support simultaneous access to ARAC capabilities by multiple users. The ARAC Client system is based on object-oriented client/server and distributed computing technologies using CORBA and Java, and consists of a large number of interacting components.

  12. Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

    SciTech Connect

    Oosthoek, J. L. M.; Kooi, B. J.; Voogt, F. C.; Attenborough, K.; Verheijen, M. A.; Hurkx, G. A. M.; Gravesteijn, D. J.

    2015-02-14

    Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament is formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.

  13. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    PubMed Central

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F.Y.; Gao, X. S.; Dai, J. Y.

    2015-01-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. PMID:26239505

  14. Thermoelectric Seebeck effect in oxide-based resistive switching memory

    NASA Astrophysics Data System (ADS)

    Wang, Ming; Bi, Chong; Li, Ling; Long, Shibing; Liu, Qi; Lv, Hangbing; Lu, Nianduan; Sun, Pengxiao; Liu, Ming

    2014-08-01

    Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties. Here we investigate the intrinsic electronic transport mechanism in such conductive filament by measuring thermoelectric Seebeck effects. We show that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary. Moreover, at low resistance states, we observe a clear semiconductor-metal transition around 150 K. These results provide insight in understanding resistive switching process and establish a basic framework for modelling resistive switching behaviour.

  15. Thermoelectric Seebeck effect in oxide-based resistive switching memory.

    PubMed

    Wang, Ming; Bi, Chong; Li, Ling; Long, Shibing; Liu, Qi; Lv, Hangbing; Lu, Nianduan; Sun, Pengxiao; Liu, Ming

    2014-01-01

    Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties. Here we investigate the intrinsic electronic transport mechanism in such conductive filament by measuring thermoelectric Seebeck effects. We show that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary. Moreover, at low resistance states, we observe a clear semiconductor-metal transition around 150 K. These results provide insight in understanding resistive switching process and establish a basic framework for modelling resistive switching behaviour.

  16. The NEEDS Data Base Management and Archival Mass Memory System

    NASA Technical Reports Server (NTRS)

    Bailey, G. A.; Bryant, S. B.; Thomas, D. T.; Wagnon, F. W.

    1980-01-01

    A Data Base Management System and an Archival Mass Memory System are being developed that will have a 10 to the 12th bit on-line and a 10 to the 13th off-line storage capacity. The integrated system will accept packetized data from the data staging area at 50 Mbps, create a comprehensive directory, provide for file management, record the data, perform error detection and correction, accept user requests, retrieve the requested data files and provide the data to multiple users at a combined rate of 50 Mbps. Stored and replicated data files will have a bit error rate of less than 10 to the -9th even after ten years of storage. The integrated system will be demonstrated to prove the technology late in 1981.

  17. A Memory-Based Reasoning Applicable to Business Problems

    NASA Astrophysics Data System (ADS)

    Maeda, Kazuho; Yaginuma, Yoshinori

    Recently, data mining is remarkable as a practical solution for huge accumulated data. The classification, the goal of which is that a new data is classified into one of given groups, is one of the most generally used data mining techniques. In this paper, we discuss advantages of Memory-Based Reasoning (MBR), one of classification methods, and point out some problems to use it practically. To solve them, we propose a MBR applicable to business problems, with self-determination of proper number of neighbors, proper feature weights, normalized distance metric between categorical values, high accuracy despite dependent features, and high speed prediction. We experimentally compare our MBR with usual MBR and C5.0, one of the most popular classification methods. We also discuss the fitness of our MBR to business problems, through an application study of our MBR to the financial credit management.

  18. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  19. On distributed memory MPI-based parallelization of SPH codes in massive HPC context

    NASA Astrophysics Data System (ADS)

    Oger, G.; Le Touzé, D.; Guibert, D.; de Leffe, M.; Biddiscombe, J.; Soumagne, J.; Piccinali, J.-G.

    2016-03-01

    Most of particle methods share the problem of high computational cost and in order to satisfy the demands of solvers, currently available hardware technologies must be fully exploited. Two complementary technologies are now accessible. On the one hand, CPUs which can be structured into a multi-node framework, allowing massive data exchanges through a high speed network. In this case, each node is usually comprised of several cores available to perform multithreaded computations. On the other hand, GPUs which are derived from the graphics computing technologies, able to perform highly multi-threaded calculations with hundreds of independent threads connected together through a common shared memory. This paper is primarily dedicated to the distributed memory parallelization of particle methods, targeting several thousands of CPU cores. The experience gained clearly shows that parallelizing a particle-based code on moderate numbers of cores can easily lead to an acceptable scalability, whilst a scalable speedup on thousands of cores is much more difficult to obtain. The discussion revolves around speeding up particle methods as a whole, in a massive HPC context by making use of the MPI library. We focus on one particular particle method which is Smoothed Particle Hydrodynamics (SPH), one of the most widespread today in the literature as well as in engineering.

  20. Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

    SciTech Connect

    Lian, Xiaojuan Cartoixà, Xavier; Miranda, Enrique; Suñé, Jordi; Perniola, Luca; Rurali, Riccardo; Long, Shibing; Liu, Ming

    2014-06-28

    We depart from first-principle simulations of electron transport along paths of oxygen vacancies in HfO{sub 2} to reformulate the Quantum Point Contact (QPC) model in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament (CF) and its electrical properties can be provided. The new multi-scale QPC model is applied to two different HfO{sub 2}-based devices operated in the unipolar and bipolar resistive switching (RS) modes. Extraction of the QPC model parameters from a statistically significant number of CFs allows revealing significant structural differences in the CF of these two types of devices and RS modes.

  1. WormBase: new content and better access

    PubMed Central

    Bieri, Tamberlyn; Blasiar, Darin; Ozersky, Philip; Antoshechkin, Igor; Bastiani, Carol; Canaran, Payan; Chan, Juancarlos; Chen, Nansheng; Chen, Wen J.; Davis, Paul; Fiedler, Tristan J.; Girard, Lisa; Han, Michael; Harris, Todd W.; Kishore, Ranjana; Lee, Raymond; McKay, Sheldon; Müller, Hans-Michael; Nakamura, Cecilia; Petcherski, Andrei; Rangarajan, Arun; Rogers, Anthony; Schindelman, Gary; Schwarz, Erich M.; Spooner, Will; Tuli, Mary Ann; Auken, Kimberly Van; Wang, Daniel; Wang, Xiaodong; Williams, Gary; Durbin, Richard; Stein, Lincoln D.; Sternberg, Paul W.; Spieth, John

    2007-01-01

    WormBase (), a model organism database for Caenorhabditis elegans and other related nematodes, continues to evolve and expand. Over the past year WormBase has added new data on C.elegans, including data on classical genetics, cell biology and functional genomics; expanded the annotation of closely related nematodes with a new genome browser for Caenorhabditis remanei; and deployed new hardware for stronger performance. Several existing datasets including phenotype descriptions and RNAi experiments have seen a large increase in new content. New datasets such as the C.remanei draft assembly and annotations, the Vancouver Fosmid library and TEC-RED 5′ end sites are now available as well. Access to and searching WormBase has become more dependable and flexible via multiple mirror sites and indexing through Google. PMID:17099234

  2. The Dynamics of Scaling: A Memory-Based Anchor Model of Category Rating and Absolute Identification

    ERIC Educational Resources Information Center

    Petrov, Alexander A.; Anderson, John R.

    2005-01-01

    A memory-based scaling model--ANCHOR--is proposed and tested. The perceived magnitude of the target stimulus is compared with a set of anchors in memory. Anchor selection is probabilistic and sensitive to similarity, base-level strength, and recency. The winning anchor provides a reference point near the target and thereby converts the global…

  3. A Chinese Chan-based lifestyle intervention improves memory of older adults

    PubMed Central

    Chan, Agnes S.; Sze, Sophia L.; Woo, Jean; Yu, Ruby H.

    2014-01-01

    This study aims to explore the potential benefits of a Chinese Chan-based lifestyle intervention on enhancing memory in older people with lower memory function. Forty-four aged 60–83 adults with various level of memory ability participated in the study. Their memories (including verbal and visual components) were assessed before and after 3 months intervention. The intervention consisted of 12 sessions, with one 90 min session per week. The intervention involved components of adopting a special vegetarian diet, practicing a type of mind–body exercises, and learning self-realization. Elderly with lower memory function at the baseline (i.e., their performance on standardized memory tests was within 25th percentile) showed a significant memory improvement after the intervention. Their verbal and visual memory performance has showed 50 and 49% enhancement, respectively. In addition, their improvement can be considered as a reliable and clinically significant change as reflected by their significant pre–post differences and reliable change indices. Such robust treatment effect was found to be specific to memory functions, but less influencing on the other cognitive functions. These preliminary encouraging results have shed some light on the potential applicability of the Chinese Chan-based lifestyle intervention as a method for enhancing memory in the elderly population. PMID:24723885

  4. A Chinese Chan-based lifestyle intervention improves memory of older adults.

    PubMed

    Chan, Agnes S; Sze, Sophia L; Woo, Jean; Yu, Ruby H

    2014-01-01

    This study aims to explore the potential benefits of a Chinese Chan-based lifestyle intervention on enhancing memory in older people with lower memory function. Forty-four aged 60-83 adults with various level of memory ability participated in the study. Their memories (including verbal and visual components) were assessed before and after 3 months intervention. The intervention consisted of 12 sessions, with one 90 min session per week. The intervention involved components of adopting a special vegetarian diet, practicing a type of mind-body exercises, and learning self-realization. Elderly with lower memory function at the baseline (i.e., their performance on standardized memory tests was within 25th percentile) showed a significant memory improvement after the intervention. Their verbal and visual memory performance has showed 50 and 49% enhancement, respectively. In addition, their improvement can be considered as a reliable and clinically significant change as reflected by their significant pre-post differences and reliable change indices. Such robust treatment effect was found to be specific to memory functions, but less influencing on the other cognitive functions. These preliminary encouraging results have shed some light on the potential applicability of the Chinese Chan-based lifestyle intervention as a method for enhancing memory in the elderly population.

  5. Proximity-based access control for context-sensitive information provision in SOA-based systems

    NASA Astrophysics Data System (ADS)

    Rajappan, Gowri; Wang, Xiaofei; Grant, Robert; Paulini, Matthew

    2014-06-01

    Service Oriented Architecture (SOA) has enabled open-architecture integration of applications within an enterprise. For net-centric Command and Control (C2), this elucidates information sharing between applications and users, a critical requirement for mission success. The Information Technology (IT) access control schemes, which arbitrate who gets access to what information, do not yet have the contextual knowledge to dynamically allow this information sharing to happen dynamically. The access control might prevent legitimate users from accessing information relevant to the current mission context, since this context may be very different from the context for which the access privileges were configured. We evaluate a pair of data relevance measures - proximity and risk - and use these as the basis of dynamic access control. Proximity is a measure of the strength of connection between the user and the resource. However, proximity is not sufficient, since some data might have a negative impact, if leaked, which far outweighs importance to the subject's mission. For this, we use a risk measure to quantify the downside of data compromise. Given these contextual measures of proximity and risk, we investigate extending Attribute-Based Access Control (ABAC), which is used by the Department of Defense, and Role-Based Access Control (RBAC), which is widely used in the civilian market, so that these standards-based access control models are given contextual knowledge to enable dynamic information sharing. Furthermore, we consider the use of such a contextual access control scheme in a SOA-based environment, in particular for net-centric C2.

  6. Adding memory processing behaviors to the fuzzy behaviorist-based navigation of mobile robots

    SciTech Connect

    Pin, F.G.; Bender, S.R.

    1996-05-01

    Most fuzzy logic-based reasoning schemes developed for robot control are fully reactive, i.e., the reasoning modules consist of fuzzy rule bases that represent direct mappings from the stimuli provided by the perception systems to the responses implemented by the motion controllers. Due to their totally reactive nature, such reasoning systems can encounter problems such as infinite loops and limit cycles. In this paper, we proposed an approach to remedy these problems by adding a memory and memory-related behaviors to basic reactive systems. Three major types of memory behaviors are addressed: memory creation, memory management, and memory utilization. These are first presented, and examples of their implementation for the recognition of limit cycles during the navigation of an autonomous robot in a priori unknown environments are then discussed.

  7. Sex-Based Memory Advantages and Cognitive Aging: A Challenge to the Cognitive Reserve Construct?

    PubMed Central

    Caselli, Richard J.; Dueck, Amylou C.; Locke, Dona E.C.; Baxter, Leslie C.; Woodruff, Bryan K.; Geda, Yonas E.

    2016-01-01

    Education and related proxies for cognitive reserve (CR) are confounded by associations with environmental factors that correlate with cerebrovascular disease possibly explaining discrepancies between studies examining their relationships to cognitive aging and dementia. In contrast, sex-related memory differences may be a better proxy. Since they arise developmentally, they are less likely to reflect environmental confounds. Women outperform men on verbal and men generally outperform women on visuospatial memory tasks. Furthermore, memory declines during the preclinical stage of AD, when it is clinically indistinguishable from normal aging. To determine whether CR mitigates age-related memory decline, we examined the effects of gender and APOE genotype on longitudinal memory performances. Memory decline was assessed in a cohort of healthy men and women enriched for APOE ε4 who completed two verbal [Rey Auditory Verbal Learning Test (AVLT), Buschke Selective Reminding Test (SRT)] and two visuospatial [Rey-Osterrieth Complex Figure Test (CFT), and Benton Visual Retention Test (VRT)] memory tests, as well as in a separate larger and older cohort [National Alzheimer’s Coordinating Center (NACC)] who completed a verbal memory test (Logical Memory). Age-related memory decline was accelerated in APOE ε4 carriers on all verbal memory measures (AVLT, p = .03; SRT p<.001; logical memory p<.001) and on the VRT p = .006. Baseline sex associated differences were retained over time, but no sex differences in rate of decline were found for any measure in either cohort. Sex-based memory advantage does not mitigate age-related memory decline in either APOE ε4 carriers or non-carriers. PMID:25665170

  8. Different Confidence-Accuracy Relationships for Feature-Based and Familiarity-Based Memories

    ERIC Educational Resources Information Center

    Reinitz, Mark Tippens; Peria, William J.; Seguin, Julie Anne; Loftus, Geoffrey R.

    2011-01-01

    Participants studied naturalistic pictures presented for varying brief durations and then received a recognition test on which they indicated whether each picture was old or new and rated their confidence. In 1 experiment they indicated whether each "old"/"new" response was based on memory for a specific feature in the picture or instead on the…

  9. Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

    SciTech Connect

    Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.; Heindl, Ranko

    2014-05-26

    In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power present in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.

  10. Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

    NASA Astrophysics Data System (ADS)

    Li, Le; Song, Sannian; Zhang, Zhonghua; Song, Zhitang; Cheng, Yan; Lv, Shilong; Wu, Liangcai; Liu, Bo; Feng, Songlin

    2015-08-01

    The effects of Cr doping on the structural and electrical properties of Cr x (Sb4Te)1- x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb4Te alloys. Cr0.06(Sb4Te)0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr0.06(Sb4Te)0.94-based PCM cell. In addition, Cr0.06(Sb4Te)0.94 shows good endurance up to 1.1 × 104 cycles with a resistance ratio of about two orders of magnitude.

  11. Prospective memory in the rat

    PubMed Central

    Wilson, A. George; Crystal, Jonathon D.

    2011-01-01

    The content of prospective memory is comprised of representations of an action to perform in the future. When people form prospective memories, they temporarily put the memory representation in an inactive state while engaging in other activities, and then activate the representation in the future. Ultimately, successful activation of the memory representation yields an action at an appropriate, but temporally distant, time. A hallmark of prospective memory is that activation of the memory representation has a deleterious effect on current ongoing activity. Recent evidence suggests that scrub jays and non-human primates, but not other species, are capable of future planning. We hypothesized that prospective memory produces a selective deficit in performance at the time when rats access a memory representation but not when the memory representation is inactive. Rats were trained in a temporal bisection task (90 min/day). Immediately after the bisection task, half of the rats received an 8-g meal (meal group) and the other rats received no additional food (no-meal group). Sensitivity to time in the bisection task was reduced as the 90-min interval elapsed for the meal group but not for the no-meal group. This time-based prospective-memory effect was not based on response competition, an attentional limit, anticipatory contrast, or fatigue. Our results suggest that rats form prospective memories, which produces a negative side effect on ongoing activity. PMID:21922257

  12. A ground-based memory state tracker for satellite on-board computer memory

    NASA Technical Reports Server (NTRS)

    Quan, Alan; Angelino, Robert; Hill, Michael; Schwuttke, Ursula; Hervias, Felipe

    1993-01-01

    The TOPEX/POSEIDON satellite, currently in Earth orbit, will use radar altimetry to measure sea surface height over 90 percent of the world's ice-free oceans. In combination with a precise determination of the spacecraft orbit, the altimetry data will provide maps of ocean topography, which will be used to calculate the speed and direction of ocean currents worldwide. NASA's Jet Propulsion Laboratory (JPL) has primary responsibility for mission operations for TOPEX/POSEIDON. Software applications have been developed to automate mission operations tasks. This paper describes one of these applications, the Memory State Tracker, which allows the ground analyst to examine and track the contents of satellite on-board computer memory quickly and efficiently, in a human-readable format, without having to receive the data directly from the spacecraft. This process is accomplished by maintaining a groundbased mirror-image of spacecraft On-board Computer memory.

  13. Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures

    NASA Astrophysics Data System (ADS)

    van den Hurk, Jan; Havel, Viktor; Linn, Eike; Waser, Rainer; Valov, Ilia

    2013-10-01

    Complementary resistive switches based on two anti-serially connected Ag/GeSx/Pt devices were studied. The main focus was placed on the pulse mode properties as typically required in memory and logic applications. A self-designed measurement setup was applied to access each CRS part-cell individually. Our findings reveal the existence of two distinct read voltage regimes enabling both spike read as well as level read approaches. Furthermore, we experimentally verified the theoretically predicted kinetic properties in terms of pulse height vs. switching time relationship. The results obtained by this alternative approach allow a significant improvement of the basic understanding of the interplay between the two part-cells in a complementary resistive switch configuration. Furthermore, from these observations we can deduce a simplified write voltage scheme which is applicable for the considered type of memory cell.

  14. Ontology-based federated data access to human studies information.

    PubMed

    Sim, Ida; Carini, Simona; Tu, Samson W; Detwiler, Landon T; Brinkley, James; Mollah, Shamim A; Burke, Karl; Lehmann, Harold P; Chakraborty, Swati; Wittkowski, Knut M; Pollock, Brad H; Johnson, Thomas M; Huser, Vojtech

    2012-01-01

    Human studies are one of the most valuable sources of knowledge in biomedical research, but data about their design and results are currently widely dispersed in siloed systems. Federation of these data is needed to facilitate large-scale data analysis to realize the goals of evidence-based medicine. The Human Studies Database project has developed an informatics infrastructure for federated query of human studies databases, using a generalizable approach to ontology-based data access. Our approach has three main components. First, the Ontology of Clinical Research (OCRe) provides the reference semantics. Second, a data model, automatically derived from OCRe into XSD, maintains semantic synchrony of the underlying representations while facilitating data acquisition using common XML technologies. Finally, the Query Integrator issues queries distributed over the data, OCRe, and other ontologies such as SNOMED in BioPortal. We report on a demonstration of this infrastructure on data acquired from institutional systems and from ClinicalTrials.gov. PMID:23304360

  15. Three-dimensional two-photon memory materials and systems

    NASA Astrophysics Data System (ADS)

    Ford, Joseph E.; Hunter, Susan; Piyaket, Ram; Fainman, Yeshaiahu; Esener, Sadik C.; Dvornikov, Alexander S.; Rentzepis, Peter M.

    1993-04-01

    We have been developing a two-photon 3-D memory expected to provide a Tbit storage capacity and a 1 ms access time for secondary storage. Even with this new technology, there still exists a four order of magnitude gap in access times between electronic RAMS and secondary storage. In addition to the existing permanent storage approach, we have begun working on systems, key components, and materials for a dynamic parallel-access 3-D two photon memories that will bridge the gap in primary memory technologies. Over the past three years our team has been developing a write-once mass-storage memory based on two-photon bond dissociation of spirobenzopyran molecules for long lifetime storage. A cache memory must have fast write-erase capability. To achieve this we are beginning to investigate highly sensitive two-photon materials which spontaneous decay (self-erase) to the off state. These materials will be incorporated into dynamic memory systems which continually refresh the memory contents, as in an electronic DRAM. The resulting memory is expected to provide a data capacity of 1 Gbit/cm3 with a 10 ns to 1 microsecond(s) access time and a 10 Tbit/s data rate. In this presentation the latest results of the parallel-access 3-D volume memory using two-photon storage is discussed. We cover material and system considerations for both types of parallel-access memories: fast-access primary storage and large-capacity secondary storage.

  16. Auditory Distraction in Semantic Memory: A Process-Based Approach

    ERIC Educational Resources Information Center

    Marsh, John E.; Hughes, Robert W.; Jones, Dylan M.

    2008-01-01

    Five experiments demonstrate auditory-semantic distraction in tests of memory for semantic category-exemplars. The effects of irrelevant sound on category-exemplar recall are shown to be functionally distinct from those found in the context of serial short-term memory by showing sensitivity to: The lexical-semantic, rather than acoustic,…

  17. Kinetic memory based on the enzyme-limited competition.

    PubMed

    Hatakeyama, Tetsuhiro S; Kaneko, Kunihiko

    2014-08-01

    Cellular memory, which allows cells to retain information from their environment, is important for a variety of cellular functions, such as adaptation to external stimuli, cell differentiation, and synaptic plasticity. Although posttranslational modifications have received much attention as a source of cellular memory, the mechanisms directing such alterations have not been fully uncovered. It may be possible to embed memory in multiple stable states in dynamical systems governing modifications. However, several experiments on modifications of proteins suggest long-term relaxation depending on experienced external conditions, without explicit switches over multi-stable states. As an alternative to a multistability memory scheme, we propose "kinetic memory" for epigenetic cellular memory, in which memory is stored as a slow-relaxation process far from a stable fixed state. Information from previous environmental exposure is retained as the long-term maintenance of a cellular state, rather than switches over fixed states. To demonstrate this kinetic memory, we study several models in which multimeric proteins undergo catalytic modifications (e.g., phosphorylation and methylation), and find that a slow relaxation process of the modification state, logarithmic in time, appears when the concentration of a catalyst (enzyme) involved in the modification reactions is lower than that of the substrates. Sharp transitions from a normal fast-relaxation phase into this slow-relaxation phase are revealed, and explained by enzyme-limited competition among modification reactions. The slow-relaxation process is confirmed by simulations of several models of catalytic reactions of protein modifications, and it enables the memorization of external stimuli, as its time course depends crucially on the history of the stimuli. This kinetic memory provides novel insight into a broad class of cellular memory and functions. In particular, applications for long-term potentiation are discussed

  18. Extending a Role Graph for Role-Based Access Control

    NASA Astrophysics Data System (ADS)

    Asakura, Yoshiharu; Nakamoto, Yukikazu

    Role-based access control (RBAC) is widely used as an access control mechanism in various computer systems. Since an organization's lines of authority influence the authorized privileges of jobs, roles also form a hierarchical structure. A role graph is a model that represents role hierarchies and is suitable for the runtime phase of RBAC deployment. Since a role graph cannot take various forms for given roles and cannot handle abstraction of roles well, however, it is not suitable for the design phase of RBAC deployment. Hence, an extended role graph, which can take a more flexible form than that of a role graph, is proposed. The extended role graph improves diversity and clarifies abstraction of roles, making it suitable for the design phase. An equivalent transformation algorithm (ETA), for transforming an extended role graph into an equivalent role graph, is also proposed. Using the ETA, system administrators can deploy efficiently RBAC by using an extended role graph in the design phase and a standard role graph in the runtime phase.

  19. Parallel constraint satisfaction in memory-based decisions.

    PubMed

    Glöckner, Andreas; Hodges, Sara D

    2011-01-01

    Three studies sought to investigate decision strategies in memory-based decisions and to test the predictions of the parallel constraint satisfaction (PCS) model for decision making (Glöckner & Betsch, 2008). Time pressure was manipulated and the model was compared against simple heuristics (take the best and equal weight) and a weighted additive strategy. From PCS we predicted that fast intuitive decision making is based on compensatory information integration and that decision time increases and confidence decreases with increasing inconsistency in the decision task. In line with these predictions we observed a predominant usage of compensatory strategies under all time-pressure conditions and even with decision times as short as 1.7 s. For a substantial number of participants, choices and decision times were best explained by PCS, but there was also evidence for use of simple heuristics. The time-pressure manipulation did not significantly affect decision strategies. Overall, the results highlight intuitive, automatic processes in decision making and support the idea that human information-processing capabilities are less severely bounded than often assumed.

  20. Shape memory alloy-based active chiral composite cells

    NASA Astrophysics Data System (ADS)

    Prajapati, Maulik; Roy Mahapatra, D.

    2014-04-01

    Wing morphing is one of the emerging methodology towards improving aerodynamic efficiency of flight vehicle structures. In this paper a morphing structural element is designed and studied which has its origin in the well known chiral structures. The new aspect of design and functionality explored in this paper is that the chiral cell is actuated using thermal Shape Memory Alloy (SMA) actuator wires to provide directional motion. Such structure utilizes the potential of different actuations concepts based on actuator embedded in the chiral structure skin. This paper describes a new class of chiral cell structure with integrated SMA wire for actuation. Chiral topological constructs are obtained by considering passive and active load path decoupling and sub-optimal shape changes. Single cell of chiral honeycomb with actuators are analyzed using finite element simulation results and experiments. To this end, a multi-cell plan-form is characterized showing interesting possibilities in structural morphing applications. The applicability of the developed chiral cell to flexible wing skin, variable stiffness based design and controlling longitudinal-to-transverse stiffness ratio are discussed.

  1. Feature-Based Memory-Driven Attentional Capture: Visual Working Memory Content Affects Visual Attention

    ERIC Educational Resources Information Center

    Olivers, Christian N. L.; Meijer, Frank; Theeuwes, Jan

    2006-01-01

    In 7 experiments, the authors explored whether visual attention (the ability to select relevant visual information) and visual working memory (the ability to retain relevant visual information) share the same content representations. The presence of singleton distractors interfered more strongly with a visual search task when it was accompanied by…

  2. Amplified CWDM-based Next Generation Broadband Access Networks

    NASA Astrophysics Data System (ADS)

    Peiris, Sasanthi Chamarika

    The explosive growth of both fixed and mobile data-centric traffic along with the inevitable trend towards all-IP/Ethernet transport protocols and packet switched networks will ultimately lead to an all-packet-based converged fixed-mobile optical transport network from the core all the way out to the access network. To address the increasing capacity and speed requirements in the access networks, Wavelength-Division Multiplexed (WDM) and/or Coarse WDM (CWDM)-based Passive Optical Networks (PONs) are expected to emerge as the next-generation optical access infrastructures. However, due to several techno-economic hurdles, CWDM-PONs are still considered an expensive solution and have not yet made any significant inroads into the current access area. One of the key technology hurdles is the scalability of the CWDM-based PONs. Passive component optical insertion losses limit the reach of the network or the number of served optical network units (ONUs). In the recent years, optical amplified CWDM approaches have emerged and new designs of optical amplifiers have been proposed and demonstrated. The critical design parameter for these amplifiers is the very wide optical amplification bandwidth (e.g., 340 nm combined for both directions). The objective of this PhD dissertation work is first to engineer ring and tree-ring based PON architectures that can achieve longer unamplified PON reach and/or provide service to a greater number of ONUs and customers. Secondly is to develop new novel optical amplifier schemes to further address the scalability limitation of the CWDM-based PONs. Specifically, this work proposes and develops novel ultra wide-band hybrid Raman-Optical parametric amplifier (HROPA) schemes that operate over nearly the entire specified CWDM band to provide 340 nm bidirectional optical gain bandwidth over the amplified PON's downstream and upstream CWDM wavelength bands (about 170 nm in each direction). The performance of the proposed HROPA schemes is assessed

  3. Neural correlates of conceptual implicit memory and their contamination of putative neural correlates of explicit memory.

    PubMed

    Voss, Joel L; Paller, Ken A

    2007-04-01

    During episodic recognition tests, meaningful stimuli such as words can engender both conscious retrieval (explicit memory) and facilitated access to meaning that is distinct from the awareness of remembering (conceptual implicit memory). Neuroimaging investigations of one type of memory are frequently subject to the confounding influence of the other type of memory, thus posing a serious impediment to theoretical advances in this area. We used minimalist visual shapes (squiggles) to attempt to overcome this problem. Subjective ratings of squiggle meaningfulness varied idiosyncratically, and behavioral indications of conceptual implicit memory were evident only for stimuli given higher ratings. These effects did not result from perceptual-based fluency or from explicit remembering. Distinct event-related brain potentials were associated with conceptual implicit memory and with explicit memory by virtue of contrasts based on meaningfulness ratings and memory judgments, respectively. Frontal potentials from 300 to 500 msec after the onset of repeated squiggles varied systematically with perceived meaningfulness. Explicit memory was held constant in this contrast, so these potentials were taken as neural correlates of conceptual implicit memory. Such potentials can contaminate putative neural correlates of explicit memory, in that they are frequently attributed to the expression of explicit memory known as familiarity. These findings provide the first neural dissociation of these two memory phenomena during recognition testing and underscore the necessity of taking both types of memory into account in order to obtain valid neural correlates of specific memory functions. PMID:17412965

  4. Nonvolatile organic transistor memory devices based on nanostructured polymeric materials

    NASA Astrophysics Data System (ADS)

    Lu, Mau-Shen; Lu, Chien; Li, Meng-Hsien; Liu, Cheng-Liang; Chen, Wen-Chang

    2014-10-01

    We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention larger than 104 s with the ON/OFF ratio of ~103, and the multiple switching operation stability up to 100 cycles.

  5. Diffuse optical tomography based on multiple access coding

    NASA Astrophysics Data System (ADS)

    Wang, Xuefeng; Wang, Yuanqing; Su, Jinshan; Xu, Fan

    2016-04-01

    Diffuse optical tomography (DOT) has the advantages of being a non-invasive, non-radiation emitting and low-cost biological tissue imaging method, and many recent studies have employed this technology. By improving the spatial resolution and developing a new method for constantly improving the flexibility of the experimental device, the system can perform data acquisition rapidly and conveniently. We propose a method for rapid data acquisition based on multiple access coding; it can acquire data in parallel, and the system can greatly improve the temporal resolution of the data acquisition step in diffuse optical tomography thereafter. We simulate the encoding and decoding process of the source-detector pair and successfully isolate the source signal from mixed signals. The DOT image reconstruction highlight the effectiveness of the system.

  6. Bilateral thalamic lesions affect recollection- and familiarity-based recognition memory judgments.

    PubMed

    Kishiyama, Mark M; Yonelinas, Andrew P; Kroll, Neal E A; Lazzara, Michele M; Nolan, Eric C; Jones, Edward G; Jagust, William J

    2005-12-01

    The contribution of the thalamus to different forms of explicit memory is poorly understood. In the current study, explicit memory performance was examined in a 40-year-old male (RG) with bilateral anterior and medial thalamic lesions. Standardized tests indicated that the patient exhibited more severe recall than recognition deficits and his performance was generally worse for verbal compared to nonverbal memory. Recognition memory tests using the remember-know (R/K) procedure and the confidence-based receiver operating characteristic (ROC) procedure were used to examine recollection- and familiarity-based recognition. These tests revealed that RG had deficits in recollection and smaller, but consistent deficits in familiarity. The results are in agreement with models indicating that the anteromedial thalamus is important for both recollection- and familiarity-based recognition memory. PMID:16353367

  7. Time-Related Decay or Interference-Based Forgetting in Working Memory?

    ERIC Educational Resources Information Center

    Portrat, Sophie; Barrouillet, Pierre; Camos, Valerie

    2008-01-01

    The time-based resource-sharing model of working memory assumes that memory traces suffer from a time-related decay when attention is occupied by concurrent activities. Using complex continuous span tasks in which temporal parameters are carefully controlled, P. Barrouillet, S. Bernardin, S. Portrat, E. Vergauwe, & V. Camos (2007) recently…

  8. Recall of Remote Episodic Memories Can Appear Deficient because of a Gist-Based Retrieval Orientation

    ERIC Educational Resources Information Center

    Rudoy, John D.; Weintraub, Sandra; Paller, Ken A.

    2009-01-01

    Determining whether patients with amnesia can succeed in remembering their distant past has pivotal implications for theories of memory storage. However, various factors influence recall. We speculated that some patients with anterograde amnesia adopt a gist-based retrieval orientation for memories from all time periods, thereby exaggerating…

  9. Working Memory Span Development: A Time-Based Resource-Sharing Model Account

    ERIC Educational Resources Information Center

    Barrouillet, Pierre; Gavens, Nathalie; Vergauwe, Evie; Gaillard, Vinciane; Camos, Valerie

    2009-01-01

    The time-based resource-sharing model (P. Barrouillet, S. Bernardin, & V. Camos, 2004) assumes that during complex working memory span tasks, attention is frequently and surreptitiously switched from processing to reactivate decaying memory traces before their complete loss. Three experiments involving children from 5 to 14 years of age…

  10. Memory Switches Based On MnO2-x Thin Films

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni; Thakoor, Anilkumar P.; Lambe, John

    1989-01-01

    Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.

  11. Regional Webgis User Access Patterns Based on a Weighted Bipartite Network

    NASA Astrophysics Data System (ADS)

    Li, R.; Shen, Y.; Huang, W.; Wu, H.

    2015-07-01

    With the rapid development of geographic information services, Web Geographic Information Systems (WebGIS) have become an indispensable part of everyday life; correspondingly, map search engines have become extremely popular with users and WebGIS sites receive a massive volume of requests for access. These WebGIS users and the content accessed have regional characteristics; to understand regional patterns, we mined regional WebGIS user access patterns based on a weighted bipartite network. We first established a weighted bipartite network model for regional user access to a WebGIS. Then, based on the massive user WebGIS access logs, we clustered geographic information accessed and thereby identified hot access areas. Finally we quantitatively analyzed the access interests of regional users and the visitation volume characteristics of regional user access to these hot access areas in terms of user access permeability, user usage rate, and user access viscosity. Our research results show that regional user access to WebGIS is spatially aggregated, and the hot access areas that regional users accessed are associated with specific periods of time. Most regional user contact with hot accessed areas is variable and intermittent but for some users, their access to certain areas is continuous as it is associated with ongoing or recurrent objectives. The weighted bipartite network model for regional user WebGIS access provides a valid analysis method for studying user behaviour in WebGIS and the proposed access pattern exhibits access interest of regional user is spatiotemporal aggregated and presents a heavy-tailed distribution. Understanding user access patterns is good for WebGIS providers and supports better operational decision-making, and helpful for developers when optimizing WebGIS system architecture and deployment, so as to improve the user experience and to expand the popularity of WebGIS.

  12. Error-thresholds for qudit-based topological quantum memories

    NASA Astrophysics Data System (ADS)

    Andrist, Ruben S.; Wootton, James R.; Katzgraber, Helmut G.

    2014-03-01

    Extending the quantum computing paradigm from qubits to higher-dimensional quantum systems allows for increased channel capacity and a more efficient implementation of quantum gates. However, to perform reliable computations an efficient error-correction scheme adapted for these multi-level quantum systems is needed. A promising approach is via topological quantum error correction, where stability to external noise is achieved by encoding quantum information in non-local degrees of freedom. A key figure of merit is the error threshold which quantifies the fraction of physical qudits that can be damaged before logical information is lost. Here we analyze the resilience of generalized topological memories built from d-level quantum systems (qudits) to bit-flip errors. The error threshold is determined by mapping the quantum setup to a classical Potts-like model with bond disorder, which is then investigated numerically using large-scale Monte Carlo simulations. Our results show that topological error correction with qutrits exhibits an improved error threshold in comparison to qubit-based systems.

  13. Shape Memory Alloy (SMA)-Based Launch Lock

    NASA Technical Reports Server (NTRS)

    Badescu, Mircea; Bao, Xiaoqi; Bar-Cohen, Yoseph

    2014-01-01

    Most NASA missions require the use of a launch lock for securing moving components during the launch or securing the payload before release. A launch lock is a device used to prevent unwanted motion and secure the controlled components. The current launch locks are based on pyrotechnic, electro mechanically or NiTi driven pin pullers and they are mostly one time use mechanisms that are usually bulky and involve a relatively high mass. Generally, the use of piezoelectric actuation provides high precession nanometer accuracy but it relies on friction to generate displacement. During launch, the generated vibrations can release the normal force between the actuator components allowing shaft's free motion which could result in damage to the actuated structures or instruments. This problem is common to other linear actuators that consist of a ball screw mechanism. The authors are exploring the development of a novel launch lock mechanism that is activated by a shape memory alloy (SMA) material ring, a rigid element and an SMA ring holding flexure. The proposed design and analytical model will be described and discussed in this paper.

  14. A graphene-based non-volatile memory

    NASA Astrophysics Data System (ADS)

    Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

    2015-09-01

    We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET < VRESET , where SET is the process decreasing the resistance and RESET the process increasing the resistance. We achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

  15. Shape-Memory-Alloy-Based Deicing System Developed

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Ice buildup on aircraft leading edge surfaces has historically been a problem. Most conventional deicing systems rely either on surface heating to melt the accreted ice or pneumatic surface inflation to mechanically debond the ice. Deicers that rely solely on surface heating require large amounts of power. Pneumatic deicers usually cannot remove thin layers of ice and lack durability. Thus, there is a need for an advanced, low-power ice protection system. As part of the NASA Small Business and Innovation Research (SBIR) program, Innovative Dynamics, Inc., developed an aircraft deicing system that utilizes the properties of Shape Memory Alloys (SMA). The SMA-based system has achieved promising improvements in energy efficiency and durability over more conventional deicers. When they are thermally activated, SMA materials change shape; this is analogous to a conventional thermal expansion. The thermal input is currently applied via conventional technology, but there are plans to implement a passive thermal input that is supplied from the energy transfer due to the formation of the ice itself. The actively powered deicer was tested in the NASA Lewis Icing Research Tunnel on a powered rotating rig in early 1995. The system showed promise, deicing both rime and glaze ice shapes as thin as 1/8 in. The first prototype SMA deicer reduced power usage by 45 percent over existing electrothermal systems. This prototype system was targeted for rotorcraft system development. However, there are current plans underway to develop a fixed-wing version of the deicer.

  16. Shape Memory Alloy (SMA)-based launch lock

    NASA Astrophysics Data System (ADS)

    Badescu, Mircea; Bao, Xiaoqi; Bar-Cohen, Yoseph

    2014-04-01

    Most NASA missions require the use of a launch lock for securing moving components during the launch or securing the payload before release. A launch lock is a device used to prevent unwanted motion and secure the controlled components. The current launch locks are based on pyrotechnic, electro mechanically or NiTi driven pin pullers and they are mostly one time use mechanisms that are usually bulky and involve a relatively high mass. Generally, the use of piezoelectric actuation provides high precession nanometer accuracy but it relies on friction to generate displacement. During launch, the generated vibrations can release the normal force between the actuator components allowing free motion of the shaft, which could result in damage to the actuated structures or instruments. This problem is common to other linear actuators that consist of a ball screw mechanism. The authors are exploring the development of a novel launch lock mechanism that is activated by a shape memory alloy (SMA) material ring, a rigid element and an SMA ring holding flexure. The proposed design and analytical model will be described and discussed in this paper.

  17. Photo-reactive charge trapping memory based on lanthanide complex

    PubMed Central

    Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

    2015-01-01

    Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices. PMID:26449199

  18. Photo-reactive charge trapping memory based on lanthanide complex.

    PubMed

    Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V A L

    2015-01-01

    Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

  19. Photo-reactive charge trapping memory based on lanthanide complex

    NASA Astrophysics Data System (ADS)

    Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

    2015-10-01

    Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

  20. Joint Access Control Based on Access Ratio and Resource Utilization for High-Speed Railway Communications

    NASA Astrophysics Data System (ADS)

    Zhou, Yuzhe; Ai, Bo

    2015-05-01

    The fast development of high-speed rails makes people's life more and more convenient. However, provisioning of quality of service of multimedia applications for users on the high-speed train is a critical task for wireless communications. Therefore, new solutions are desirable to be found to address this kind of problem. Current researches mainly focus on providing seamless broadband wireless access for high-speed mobile terminals. In this paper, an algorithm to calculate the optimal resource reservation fraction of handovers is proposed. A joint access control scheme for high-speed railway communication handover scenario is proposed. Metrics of access ratio and resource utilization ratio are considered jointly in the analysis and the performance evaluation. Simulation results show that the proposed algorithm and the scheme improve quality of service compared with other conventional schemes.

  1. Memory protection

    NASA Technical Reports Server (NTRS)

    Denning, Peter J.

    1988-01-01

    Accidental overwriting of files or of memory regions belonging to other programs, browsing of personal files by superusers, Trojan horses, and viruses are examples of breakdowns in workstations and personal computers that would be significantly reduced by memory protection. Memory protection is the capability of an operating system and supporting hardware to delimit segments of memory, to control whether segments can be read from or written into, and to confine accesses of a program to its segments alone. The absence of memory protection in many operating systems today is the result of a bias toward a narrow definition of performance as maximum instruction-execution rate. A broader definition, including the time to get the job done, makes clear that cost of recovery from memory interference errors reduces expected performance. The mechanisms of memory protection are well understood, powerful, efficient, and elegant. They add to performance in the broad sense without reducing instruction execution rate.

  2. The construction of semantic memory: grammar-based representations learned from relational episodic information.

    PubMed

    Battaglia, Francesco P; Pennartz, Cyriel M A

    2011-01-01

    After acquisition, memories underlie a process of consolidation, making them more resistant to interference and brain injury. Memory consolidation involves systems-level interactions, most importantly between the hippocampus and associated structures, which takes part in the initial encoding of memory, and the neocortex, which supports long-term storage. This dichotomy parallels the contrast between episodic memory (tied to the hippocampal formation), collecting an autobiographical stream of experiences, and semantic memory, a repertoire of facts and statistical regularities about the world, involving the neocortex at large. Experimental evidence points to a gradual transformation of memories, following encoding, from an episodic to a semantic character. This may require an exchange of information between different memory modules during inactive periods. We propose a theory for such interactions and for the formation of semantic memory, in which episodic memory is encoded as relational data. Semantic memory is modeled as a modified stochastic grammar, which learns to parse episodic configurations expressed as an association matrix. The grammar produces tree-like representations of episodes, describing the relationships between its main constituents at multiple levels of categorization, based on its current knowledge of world regularities. These regularities are learned by the grammar from episodic memory information, through an expectation-maximization procedure, analogous to the inside-outside algorithm for stochastic context-free grammars. We propose that a Monte-Carlo sampling version of this algorithm can be mapped on the dynamics of "sleep replay" of previously acquired information in the hippocampus and neocortex. We propose that the model can reproduce several properties of semantic memory such as decontextualization, top-down processing, and creation of schemata.

  3. The Construction of Semantic Memory: Grammar-Based Representations Learned from Relational Episodic Information

    PubMed Central

    Battaglia, Francesco P.; Pennartz, Cyriel M. A.

    2011-01-01

    After acquisition, memories underlie a process of consolidation, making them more resistant to interference and brain injury. Memory consolidation involves systems-level interactions, most importantly between the hippocampus and associated structures, which takes part in the initial encoding of memory, and the neocortex, which supports long-term storage. This dichotomy parallels the contrast between episodic memory (tied to the hippocampal formation), collecting an autobiographical stream of experiences, and semantic memory, a repertoire of facts and statistical regularities about the world, involving the neocortex at large. Experimental evidence points to a gradual transformation of memories, following encoding, from an episodic to a semantic character. This may require an exchange of information between different memory modules during inactive periods. We propose a theory for such interactions and for the formation of semantic memory, in which episodic memory is encoded as relational data. Semantic memory is modeled as a modified stochastic grammar, which learns to parse episodic configurations expressed as an association matrix. The grammar produces tree-like representations of episodes, describing the relationships between its main constituents at multiple levels of categorization, based on its current knowledge of world regularities. These regularities are learned by the grammar from episodic memory information, through an expectation-maximization procedure, analogous to the inside–outside algorithm for stochastic context-free grammars. We propose that a Monte-Carlo sampling version of this algorithm can be mapped on the dynamics of “sleep replay” of previously acquired information in the hippocampus and neocortex. We propose that the model can reproduce several properties of semantic memory such as decontextualization, top-down processing, and creation of schemata. PMID:21887143

  4. Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

    SciTech Connect

    Chavent, A.; Ducruet, C.; Portemont, C.; Creuzet, C.; Alvarez-Hérault, J.; Vila, L.; Sousa, R. C.; Prejbeanu, I. L.; Dieny, B.

    2015-09-14

    This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer.

  5. Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

    NASA Astrophysics Data System (ADS)

    Chavent, A.; Ducruet, C.; Portemont, C.; Creuzet, C.; Vila, L.; Alvarez-Hérault, J.; Sousa, R. C.; Prejbeanu, I. L.; Dieny, B.

    2015-09-01

    This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ˜3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer.

  6. Performance and scalability aspects of directory-based cache coherence in shared-memory multiprocessors

    SciTech Connect

    Picano, S.; Meyer, D.G.; Brooks, E.D. III; Hoag, J.E.

    1993-05-01

    We present a study that accentuates the performance and scalability aspects of directory-based cache coherence in multiprocessor systems. Using a multiprocessor with a software-based coherence scheme, efficient implementations rely heavily on the programmer`s ability to explicitly manage the memory system, which is typically handled by hardware support on other bus-based, shared memory multiprocessors. We describe a scalable, shared memory, cache coherent multiprocessor and present simulation results obtained on three parallel programs. This multiprocessor configuration exhibits high performance at no additional parallel programming cost.

  7. Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays

    NASA Astrophysics Data System (ADS)

    Wang, Ming; Zhou, Jiantao; Yang, Yuchao; Gaba, Siddharth; Liu, Ming; Lu, Wei D.

    2015-03-01

    The conduction mechanism of a Pd/TaOx/Ta/Pd selector device, which exhibits high non-linearity (~104) and excellent uniformity, has been systematically investigated by current-voltage-temperature characterization. The measurement and simulation results indicate two dominant processes of selector current at opposite biases: thermionic emission and tunnel emission. The current-voltage-temperature behaviors of the selector can be well explained using the Simmons' trapezoidal energy barrier model. The TaOx-based selective layer was further integrated with a HfO2-based resistive switching layer to form a selector-less resistive random access memory (RRAM) device structure. The integrated device showed a reliable resistive switching behavior with a high non-linearity (~5 × 103) in the low resistance state (LRS), which can effectively mitigate the sneak path current issue in RRAM crossbar arrays. Evaluations of a crossbar array based on these selector-less RRAM cells show less than 4% degradation in read margin for arrays up to 1 Mbit in size. These results highlight the different conduction mechanisms in selector device operation and will provide insight into continued design and optimization of RRAM arrays.

  8. A fast and low-power microelectromechanical system-based non-volatile memory device

    PubMed Central

    Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

    2011-01-01

    Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

  9. Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In{sub 2}O{sub 3}) nanowire phase change random access memory

    SciTech Connect

    Jin, Bo; Lee, Jeong-Soo E-mail: ljs6951@postech.ac.kr; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I.; Pi, Dong-Hai; Seop Kim, Hyoung; Meyyappan, M. E-mail: ljs6951@postech.ac.kr

    2014-03-10

    The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In{sub 2}O{sub 3} nanowires (Ga:In{sub 2}O{sub 3} NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R{sub 0} ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (R{sub th}) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In{sub 2}O{sub 3} NW, compared to the 2.1% Ga:In{sub 2}O{sub 3} NW. The excellent characteristics of Ga-doped In{sub 2}O{sub 3} nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.

  10. Adolescent health care: improving access by school-based service.

    PubMed

    Gonzales, C; Mulligan, D; Kaufman, A; Davis, S; Hunt, K; Kalishman, N; Wallerstein, N

    1985-10-01

    Participants in this discussion of the potential of school-based health care services for adolescents included family medicine physicians, school health coordinators, a school nurse, and a community worker. It was noted that health care for adolescents tends to be either inaccessible or underutilized, largely because of a lack of sensitivity to adolescent culture and values. An ideal service for adolescents would offer immediate services for crises, strict confidentiality, ready access to prescribed medications, a sliding-scale scheme, and a staff that is tolerant of divergent values and life-styles. School-based pilot adolescent clinics have been established by the University of New Mexico's Department of Family, Community, and Emergency Medicine to test the community-oriented health care model. On-site clinics provide urgent medical care, family planning, pregnancy testing, psychological counseling, alcohol and drug counseling, and classroom health education. Experience with these programs has demonstrated the necessity for an alliance among the health team and the school administration, parents, and students. Financial, ethical, and political factors can serve as constraints to school-based programs. In some cases, school administrators have been resistant to the provision of contraception to students on school grounds and parents have been unwilling to accept the adolescent's right to confidentiality. These problems in part stem from having 2 separate systems, each with its own values, orientation, and responsibilities, housed in 1 facility. In addition, there have been problems generating awareness of the school-based clinic among students. Health education theater groups, peer counseling, and student-run community services have been effective, however, in increasing student participation. It has been helpful to mold clinic services to meet the needs identified by teenagers themselves. There is an interest not only in curative services, but in services focused

  11. Smartphone-based system to improve transportation access for the cognitively impaired.

    PubMed

    Anderson, Shane M; Riehle, Timothy H; Lichter, Patrick A; Brown, Allen W; Panescu, Dorin

    2015-08-01

    This project developed and evaluated a smartphone-based system to improve mobility and transportation access for the cognitively impaired. The proposed system is intended to allow the cognitively impaired to use public transportation systems, community transportation and dedicated transportation services for the disabled with greater ease and safety. Individuals with cognitive disabilities are often unable to operate an automobile, or may require a prolonged recovery period before resuming driving. Public transportation systems represent a significant means to allow these individuals to maintain independence. Yet public transportation systems can pose significant challenges to individuals with cognitive impairment. The goal of this project is to develop a system to reduce these barriers via a technological solution consisting of components developed both for the cognitively impaired user and their caregiver or family member. The first component consists of a cognitive prosthetic device featuring traditional memory cueing and reminders as well as custom location-based transportation specific functions. This cognitive mobility assistant will leverage the computing power and GPS location determination capabilities of inexpensive, powerful smart phones. The second component consists of a management application which offers caregivers the ability to configure and program the reminder and transit functions remotely via the Internet. Following completion of the prototype system a pilot human test was performed with cognitively disabled individuals and family members or caregivers to assess the usability and acceptability of both system components. PMID:26738091

  12. Smartphone-based system to improve transportation access for the cognitively impaired.

    PubMed

    Anderson, Shane M; Riehle, Timothy H; Lichter, Patrick A; Brown, Allen W; Panescu, Dorin

    2015-01-01

    This project developed and evaluated a smartphone-based system to improve mobility and transportation access for the cognitively impaired. The proposed system is intended to allow the cognitively impaired to use public transportation systems, community transportation and dedicated transportation services for the disabled with greater ease and safety. Individuals with cognitive disabilities are often unable to operate an automobile, or may require a prolonged recovery period before resuming driving. Public transportation systems represent a significant means to allow these individuals to maintain independence. Yet public transportation systems can pose significant challenges to individuals with cognitive impairment. The goal of this project is to develop a system to reduce these barriers via a technological solution consisting of components developed both for the cognitively impaired user and their caregiver or family member. The first component consists of a cognitive prosthetic device featuring traditional memory cueing and reminders as well as custom location-based transportation specific functions. This cognitive mobility assistant will leverage the computing power and GPS location determination capabilities of inexpensive, powerful smart phones. The second component consists of a management application which offers caregivers the ability to configure and program the reminder and transit functions remotely via the Internet. Following completion of the prototype system a pilot human test was performed with cognitively disabled individuals and family members or caregivers to assess the usability and acceptability of both system components.

  13. Cooperation in memory-based prisoner's dilemma game on interdependent networks

    NASA Astrophysics Data System (ADS)

    Luo, Chao; Zhang, Xiaolin; Liu, Hong; Shao, Rui

    2016-05-01

    Memory or so-called experience normally plays the important role to guide the human behaviors in real world, that is essential for rational decisions made by individuals. Hence, when the evolutionary behaviors of players with bounded rationality are investigated, it is reasonable to make an assumption that players in system are with limited memory. Besides, in order to unravel the intricate variability of complex systems in real world and make a highly integrative understanding of their dynamics, in recent years, interdependent networks as a comprehensive network structure have obtained more attention in this community. In this article, the evolution of cooperation in memory-based prisoner's dilemma game (PDG) on interdependent networks composed by two coupled square lattices is studied. Herein, all or part of players are endowed with finite memory ability, and we focus on the mutual influence of memory effect and interdependent network reciprocity on cooperation of spatial PDG. We show that the density of cooperation can be significantly promoted within an optimal region of memory length and interdependent strength. Furthermore, distinguished by whether having memory ability/external links or not, each kind of players on networks would have distinct evolutionary behaviors. Our work could be helpful to understand the emergence and maintenance of cooperation under the evolution of memory-based players on interdependent networks.

  14. School based working memory training: Preliminary finding of improvement in children’s mathematical performance

    PubMed Central

    Witt, Marcus

    2011-01-01

    Working memory is a complex cognitive system responsible for the concurrent storage and processing of information. Ggiven that a complex cognitive task like mental arithmetic clearly places demands on working memory (e.g., in remembering partial results, monitoring progress through a multi-step calculation), there is surprisingly little research exploring the possibility of increasing young children’s working memory capacity through systematic school-based training. Tthis study reports the preliminary results of a working memory training programme, targeting executive processes such as inhibiting unwanted information, monitoring processes, and the concurrent storage and processing of information. Tthe findings suggest that children who received working memory training made significantly greater gains in the trained working memory task, and in a non-trained visual-spatial working memory task, than a matched control group. Moreover, the training group made significant improvements in their mathematical functioning as measured by the number of errors made in an addition task compared to the control group. Tthese findings, although preliminary, suggest that school-based measures to train working memory could have benefits in terms of improved performance in mathematics. PMID:21818243

  15. School based working memory training: Preliminary finding of improvement in children's mathematical performance.

    PubMed

    Witt, Marcus

    2011-01-01

    Working memory is a complex cognitive system responsible for the concurrent storage and processing of information. Ggiven that a complex cognitive task like mental arithmetic clearly places demands on working memory (e.g., in remembering partial results, monitoring progress through a multi-step calculation), there is surprisingly little research exploring the possibility of increasing young children's working memory capacity through systematic school-based training. Tthis study reports the preliminary results of a working memory training programme, targeting executive processes such as inhibiting unwanted information, monitoring processes, and the concurrent storage and processing of information. Tthe findings suggest that children who received working memory training made significantly greater gains in the trained working memory task, and in a non-trained visual-spatial working memory task, than a matched control group. Moreover, the training group made significant improvements in their mathematical functioning as measured by the number of errors made in an addition task compared to the control group. Tthese findings, although preliminary, suggest that school-based measures to train working memory could have benefits in terms of improved performance in mathematics. PMID:21818243

  16. A Framework for Context Sensitive Risk-Based Access Control in Medical Information Systems.

    PubMed

    Choi, Donghee; Kim, Dohoon; Park, Seog

    2015-01-01

    Since the access control environment has changed and the threat of insider information leakage has come to the fore, studies on risk-based access control models that decide access permissions dynamically have been conducted vigorously. Medical information systems should protect sensitive data such as medical information from insider threat and enable dynamic access control depending on the context such as life-threatening emergencies. In this paper, we suggest an approach and framework for context sensitive risk-based access control suitable for medical information systems. This approach categorizes context information, estimating and applying risk through context- and treatment-based permission profiling and specifications by expanding the eXtensible Access Control Markup Language (XACML) to apply risk. The proposed framework supports quick responses to medical situations and prevents unnecessary insider data access through dynamic access authorization decisions in accordance with the severity of the context and treatment. PMID:26075013

  17. A Framework for Context Sensitive Risk-Based Access Control in Medical Information Systems

    PubMed Central

    Choi, Donghee; Kim, Dohoon; Park, Seog

    2015-01-01

    Since the access control environment has changed and the threat of insider information leakage has come to the fore, studies on risk-based access control models that decide access permissions dynamically have been conducted vigorously. Medical information systems should protect sensitive data such as medical information from insider threat and enable dynamic access control depending on the context such as life-threatening emergencies. In this paper, we suggest an approach and framework for context sensitive risk-based access control suitable for medical information systems. This approach categorizes context information, estimating and applying risk through context- and treatment-based permission profiling and specifications by expanding the eXtensible Access Control Markup Language (XACML) to apply risk. The proposed framework supports quick responses to medical situations and prevents unnecessary insider data access through dynamic access authorization decisions in accordance with the severity of the context and treatment. PMID:26075013

  18. Different effects of color-based and location-based selection on visual working memory.

    PubMed

    Li, Qi; Saiki, Jun

    2015-02-01

    In the present study, we investigated how feature- and location-based selection influences visual working memory (VWM) encoding and maintenance. In Experiment 1, cue type (color, location) and cue timing (precue, retro-cue) were manipulated in a change detection task. The stimuli were color-location conjunction objects, and binding memory was tested. We found a significantly greater effect for color precues than for either color retro-cues or location precues, but no difference between location pre- and retro-cues, consistent with previous studies (e.g., Griffin & Nobre in Journal of Cognitive Neuroscience, 15, 1176-1194, 2003). We also found no difference between location and color retro-cues. Experiment 2 replicated the color precue advantage with more complex color-shape-location conjunction objects. Only one retro-cue effect was different from that in Experiment 1: Color retro-cues were significantly less effective than location retro-cues in Experiment 2, which may relate to a structural property of multidimensional VWM representations. In Experiment 3, a visual search task was used, and the result of a greater location than color precue effect suggests that the color precue advantage in a memory task is related to the modulation of VWM encoding rather than of sensation and perception. Experiment 4, using a task that required only memory for individual features but not for feature bindings, further confirmed that the color precue advantage is specific to binding memory. Together, these findings reveal new aspects of the interaction between attention and VWM and provide potentially important implications for the structural properties of VWM representations. PMID:25338537

  19. Visual and Spatial Working Memory Are Not that Dissociated after All: A Time-Based Resource-Sharing Account

    ERIC Educational Resources Information Center

    Vergauwe, Evie; Barrouillet, Pierre; Camos, Valerie

    2009-01-01

    Examinations of interference between visual and spatial materials in working memory have suggested domain- and process-based fractionations of visuo-spatial working memory. The present study examined the role of central time-based resource sharing in visuo-spatial working memory and assessed its role in obtained interference patterns. Visual and…

  20. Is external memory memory? Biological memory and extended mind.

    PubMed

    Michaelian, Kourken

    2012-09-01

    Clark and Chalmers (1998) claim that an external resource satisfying the following criteria counts as a memory: (1) the agent has constant access to the resource; (2) the information in the resource is directly available; (3) retrieved information is automatically endorsed; (4) information is stored as a consequence of past endorsement. Research on forgetting and metamemory shows that most of these criteria are not satisfied by biological memory, so they are inadequate. More psychologically realistic criteria generate a similar classification of standard putative external memories, but the criteria still do not capture the function of memory. An adequate account of memory function, compatible with its evolution and its roles in prospection and imagination, suggests that external memory performs a function not performed by biological memory systems. External memory is thus not memory. This has implications for: extended mind theorizing, ecological validity of memory research, the causal theory of memory.

  1. 39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yasue; Moriwaki, Shinichi; Kawasumi, Atsushi; Miyano, Shinji; Shinohara, Hirofumi

    2016-04-01

    We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at V DD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at V DD = 0.55 V. WWL-BST after read sensing scheme improves minimum operating voltage (V min) by 140 mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BST and WWL-BST has been developed using a 40 nm CMOS.

  2. Styrene-based shape memory foam: fabrication and mathematical modeling

    NASA Astrophysics Data System (ADS)

    Yao, Yongtao; Zhou, Tianyang; Qin, Chao; Liu, Yanju; Leng, Jinsong

    2016-10-01

    Shape memory polymer foam is a promising kind of structure in the biomedical and aerospace field. Shape memory styrene foam with uniform and controlled open-cell structure was successfully fabricated using a salt particulate leaching method. Shape recovery capability exists for foam programming in both high-temperature compression and low-temperature compression (memory foam, the theories of Gibson and Ashby as well as differential micromechanics theory were applied to predict Young’s modulus and the mechanical behavior of SMP styrene foams during the compression process.

  3. Precision requirements for spin-echo-based quantum memories

    SciTech Connect

    Heshami, Khabat; Simon, Christoph; Sangouard, Nicolas; Minar, Jiri; Riedmatten, Hugues de

    2011-03-15

    Spin-echo techniques are essential for achieving long coherence times in solid-state quantum memories for light because of inhomogeneous broadening of the spin transitions. It has been suggested that unrealistic levels of precision for the radio-frequency control pulses would be necessary for successful decoherence control at the quantum level. Here we study the effects of pulse imperfections in detail, using both a semiclassical and a fully quantum-mechanical approach. Our results show that high efficiencies and low noise-to-signal ratios can be achieved for the quantum memories in the single-photon regime for realistic levels of control pulse precision. We also analyze errors due to imperfect initial-state preparation (optical pumping), showing that they are likely to be more important than control pulse errors in many practical circumstances. These results are crucial for future developments of solid-state quantum memories.

  4. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.

    2013-12-01

    In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

  5. Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

    NASA Astrophysics Data System (ADS)

    Lee, Daeseok; Woo, Jiyong; Park, Sangsu; Cha, Euijun; Lee, Sangheon; Hwang, Hyunsang

    2014-02-01

    The dependence of reactive metal layer on resistive switching characteristics is investigated in a bi-layer structural Ta/HfOx filament type resistive random access memory (ReRAM). By increasing the oxygen absorption rate of the reactive metal layer, formation of an induced resistive switching region that led to significant changes in the resistive switching characteristics of the ReRAM was observed. Electrical and physical analyses showed that the induced TaOx-resistive switching region can result in self-compliance behavior, uniform resistive switching, and a gradual set process, which can be utilized for low power and analog operations.

  6. Photo-enhanced polymer memory device based on polyimide containing spiropyran

    NASA Astrophysics Data System (ADS)

    Seok, Woong Chul; Son, Seok Ho; An, Tae Kyu; Kim, Se Hyun; Lee, Seung Woo

    2016-07-01

    This paper reports the synthesis of a new polyimide (PI) containing a spiropyran moiety in the side chain and its applications to the switchable polymer memory before and after UV exposure. UV exposure allows memory using spiropyran-based PI as an active layer with a higher current and lower switching-ON voltage compared to the unexposed device due to the structural changes in the spiropyran moiety after UV exposure. In addition, this study examined the effects of UV exposure on the performance of the memory containing spiropyran-based PI using the UV-Vis absorption spectra and space-charge limited conduction (SCLC) model. [Figure not available: see fulltext.

  7. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    NASA Astrophysics Data System (ADS)

    Dai, Yuehua; Pan, Zhiyong; Wang, Feifei; Li, Xiaofeng

    2016-08-01

    The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  8. Cross-cultural differences in memory: the role of culture-based stereotypes about aging.

    PubMed

    Yoon, C; Hasher, L; Feinberg, F; Rahhal, T A; Winocur, G

    2000-12-01

    The extent to which cultural stereotypes about aging contribute to age differences in memory performance is investigated by comparing younger and older Anglophone Canadians to demographically matched Chinese Canadians, who tend to hold more positive views of aging. Four memory tests were administered. In contrast to B. Levy and E. Langer's (1994) findings, younger adults in both cultural groups outperformed their older comparison group on all memory tests. For 2 tests, which made use of visual stimuli resembling ideographic characters in written Chinese, the older Chinese Canadians approached, but did not reach, the performance achieved by their younger counterparts, as well as outperformed the older Anglophone Canadians. However, on the other two tests, which assess memory for complex figures and abstract designs, no differences were observed between the older Chinese and Anglophone Canadians. Path analysis results suggest that this pattern of findings is not easily attributed to a wholly culturally based account of age differences in memory performance.

  9. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

    NASA Astrophysics Data System (ADS)

    Suga, Hiroshi; Suzuki, Hiroya; Shinomura, Yuma; Kashiwabara, Shota; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

    2016-10-01

    Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.

  10. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    NASA Astrophysics Data System (ADS)

    Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

    2016-07-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔVth ˜ 15 V) and a long retention time (>105 s). The magnitude of ΔVth depended on both P/E voltages and the bias voltage (VDS): ΔVth was a cubic function to VP/E and linearly depended on VDS. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  11. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

    PubMed Central

    Suga, Hiroshi; Suzuki, Hiroya; Shinomura, Yuma; Kashiwabara, Shota; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

    2016-01-01

    Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field. PMID:27725705

  12. Quantum memory Quantum memory

    NASA Astrophysics Data System (ADS)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  13. Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory.

    PubMed

    Huang, Yu-Ting; Huang, Chun-Wei; Chen, Jui-Yuan; Ting, Yi-Hsin; Lu, Kuo-Chang; Chueh, Yu-Lun; Wu, Wen-Wei

    2014-09-23

    Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM. PMID:25133955

  14. Brain Bases of Working Memory for Time Intervals in Rhythmic Sequences.

    PubMed

    Teki, Sundeep; Griffiths, Timothy D

    2016-01-01

    Perception of auditory time intervals is critical for accurate comprehension of natural sounds like speech and music. However, the neural substrates and mechanisms underlying the representation of time intervals in working memory are poorly understood. In this study, we investigate the brain bases of working memory for time intervals in rhythmic sequences using functional magnetic resonance imaging. We used a novel behavioral paradigm to investigate time-interval representation in working memory as a function of the temporal jitter and memory load of the sequences containing those time intervals. Human participants were presented with a sequence of intervals and required to reproduce the duration of a particular probed interval. We found that perceptual timing areas including the cerebellum and the striatum were more or less active as a function of increasing and decreasing jitter of the intervals held in working memory respectively whilst the activity of the inferior parietal cortex is modulated as a function of memory load. Additionally, we also analyzed structural correlations between gray and white matter density and behavior and found significant correlations in the cerebellum and the striatum, mirroring the functional results. Our data demonstrate neural substrates of working memory for time intervals and suggest that the cerebellum and the striatum represent core areas for representing temporal information in working memory.

  15. Brain Bases of Working Memory for Time Intervals in Rhythmic Sequences

    PubMed Central

    Teki, Sundeep; Griffiths, Timothy D.

    2016-01-01

    Perception of auditory time intervals is critical for accurate comprehension of natural sounds like speech and music. However, the neural substrates and mechanisms underlying the representation of time intervals in working memory are poorly understood. In this study, we investigate the brain bases of working memory for time intervals in rhythmic sequences using functional magnetic resonance imaging. We used a novel behavioral paradigm to investigate time-interval representation in working memory as a function of the temporal jitter and memory load of the sequences containing those time intervals. Human participants were presented with a sequence of intervals and required to reproduce the duration of a particular probed interval. We found that perceptual timing areas including the cerebellum and the striatum were more or less active as a function of increasing and decreasing jitter of the intervals held in working memory respectively whilst the activity of the inferior parietal cortex is modulated as a function of memory load. Additionally, we also analyzed structural correlations between gray and white matter density and behavior and found significant correlations in the cerebellum and the striatum, mirroring the functional results. Our data demonstrate neural substrates of working memory for time intervals and suggest that the cerebellum and the striatum represent core areas for representing temporal information in working memory. PMID:27313506

  16. Brain Bases of Working Memory for Time Intervals in Rhythmic Sequences.

    PubMed

    Teki, Sundeep; Griffiths, Timothy D

    2016-01-01

    Perception of auditory time intervals is critical for accurate comprehension of natural sounds like speech and music. However, the neural substrates and mechanisms underlying the representation of time intervals in working memory are poorly understood. In this study, we investigate the brain bases of working memory for time intervals in rhythmic sequences using functional magnetic resonance imaging. We used a novel behavioral paradigm to investigate time-interval representation in working memory as a function of the temporal jitter and memory load of the sequences containing those time intervals. Human participants were presented with a sequence of intervals and required to reproduce the duration of a particular probed interval. We found that perceptual timing areas including the cerebellum and the striatum were more or less active as a function of increasing and decreasing jitter of the intervals held in working memory respectively whilst the activity of the inferior parietal cortex is modulated as a function of memory load. Additionally, we also analyzed structural correlations between gray and white matter density and behavior and found significant correlations in the cerebellum and the striatum, mirroring the functional results. Our data demonstrate neural substrates of working memory for time intervals and suggest that the cerebellum and the striatum represent core areas for representing temporal information in working memory. PMID:27313506

  17. Runtime and Programming Support for Memory Adaptation in Scientific Applications via Local Disk and Remote Memory

    SciTech Connect

    Mills, Richard T; Yue, Chuan; Andreas, Stathopoulos; Nikolopoulos, Dimitrios S

    2007-01-01

    The ever increasing memory demands of many scientific applications and the complexity of today's shared computational resources still require the occasional use of virtual memory, network memory, or even out-of-core implementations, with well known drawbacks in performance and usability. In Mills et al. (Adapting to memory pressure from within scientific applications on multiprogrammed COWS. In: International Parallel and Distributed Processing Symposium, IPDPS, Santa Fe, NM, 2004), we introduced a basic framework for a runtime, user-level library, MMlib, in which DRAM is treated as a dynamic size cache for large memory objects residing on local disk. Application developers can specify and access these objects through MMlib, enabling their application to execute optimally under variable memory availability, using as much DRAM as fluctuating memory levels will allow. In this paper, we first extend our earlier MMlib prototype from a proof of concept to a usable, robust, and flexible library. We present a general framework that enables fully customizable memory malleability in a wide variety of scientific applications. We provide several necessary enhancements to the environment sensing capabilities of MMlib, and introduce a remote memory capability, based on MPI communication of cached memory blocks between 'compute nodes' and designated memory servers. The increasing speed of interconnection networks makes a remote memory approach attractive, especially at the large granularity present in large scientific applications. We show experimental results from three important scientific applications that require the general MMlib framework. The memory-adaptive versions perform nearly optimally under constant memory pressure and execute harmoniously with other applications competing for memory, without thrashing the memory system. Under constant memory pressure, we observe execution time improvements of factors between three and

  18. Feature-based and spatial attentional selection in visual working memory.

    PubMed

    Heuer, Anna; Schubö, Anna

    2016-05-01

    The contents of visual working memory (VWM) can be modulated by spatial cues presented during the maintenance interval ("retrocues"). Here, we examined whether attentional selection of representations in VWM can also be based on features. In addition, we investigated whether the mechanisms of feature-based and spatial attention in VWM differ with respect to parallel access to noncontiguous locations. In two experiments, we tested the efficacy of valid retrocues relying on different kinds of information. Specifically, participants were presented with a typical spatial retrocue pointing to two locations, a symbolic spatial retrocue (numbers mapping onto two locations), and two feature-based retrocues: a color retrocue (a blob of the same color as two of the items) and a shape retrocue (an outline of the shape of two of the items). The two cued items were presented at either contiguous or noncontiguous locations. Overall retrocueing benefits, as compared to a neutral condition, were observed for all retrocue types. Whereas feature-based retrocues yielded benefits for cued items presented at both contiguous and noncontiguous locations, spatial retrocues were only effective when the cued items had been presented at contiguous locations. These findings demonstrate that attentional selection and updating in VWM can operate on different kinds of information, allowing for a flexible and efficient use of this limited system. The observation that the representations of items presented at noncontiguous locations could only be reliably selected with feature-based retrocues suggests that feature-based and spatial attentional selection in VWM rely on different mechanisms, as has been shown for attentional orienting in the external world. PMID:26754949

  19. Creating a transducer electronic datasheet using I2C serial EEPROM memory and PIC32-based microcontroller development board

    NASA Astrophysics Data System (ADS)

    Croitoru, Bogdan; Tulbure, Adrian; Abrudean, Mihail; Secara, Mihai

    2015-02-01

    The present paper describes a software method for creating / managing one type of Transducer Electronic Datasheet (TEDS) according to IEEE 1451.4 standard in order to develop a prototype of smart multi-sensor platform (with up to ten different analog sensors simultaneously connected) with Plug and Play capabilities over ETHERNET and Wi-Fi. In the experiments were used: one analog temperature sensor, one analog light sensor, one PIC32-based microcontroller development board with analog and digital I/O ports and other computing resources, one 24LC256 I2C (Inter Integrated Circuit standard) serial Electrically Erasable Programmable Read Only Memory (EEPROM) memory with 32KB available space and 3 bytes internal buffer for page writes (1 byte for data and 2 bytes for address). It was developed a prototype algorithm for writing and reading TEDS information to / from I2C EEPROM memories using the standard C language (up to ten different TEDS blocks coexisting in the same EEPROM device at once). The algorithm is able to write and read one type of TEDS: transducer information with standard TEDS content. A second software application, written in VB.NET platform, was developed in order to access the EEPROM sensor information from a computer through a serial interface (USB).

  20. Relationship among grain size, annealing twins and shape memory effect in Fe–Mn–Si based shape memory alloys

    NASA Astrophysics Data System (ADS)

    Wang, Gaixia; Peng, Huabei; Zhang, Chengyan; Wang, Shanling; Wen, Yuhua

    2016-07-01

    In order to clarify the relationship among grain size, annealing twins and the shape memory effect in Fe–Mn–Si based shape memory alloys, the Fe–21.63Mn–5.60Si–9.32Cr–5.38Ni (weight %) alloy with a grain size ranging from 48.9 μm–253.6 μm was obtained by adjusting the heating temperature or heating time after 20% cold-rolling. The densities of grain boundaries and annealing twins increase with a decrease in grain size, whereas the volume fraction and width of stress-induced ε martensite after 9% deformation at Ms + 10 K decrease. This result indicates that grain refinement raises the constraint effects of grain boundaries and annealing twins upon martensitic transformation. In this case, the ability to suppress the plastic deformation and facilitate the stress-induced ε martensite transformation deteriorates after grain refinement owing to the enhancement of the constraint effects. It is demonstrated by the result that the difference at Ms + 10 K between the critical stress for plastic yielding and that for inducing martensitic transformation is smaller for the specimen with a grain size of 48.9 μm than for the specimen with a grain size of 253.6 μm. Therefore, the shape memory effect declined by decreasing the grain size.