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Sample records for access memory device

  1. Magnetic Random Access Memory (MRAM) Device Development

    SciTech Connect

    Cerjan, C; Law, B P

    2000-01-18

    The recent discovery of materials that have anomalous magneto-resistive properties has generated renewed commercial interest in metal-based fast memory storage as an alternative to the currently used semiconductor-based devices. One particularly promising ternary alloy, fabricated at LLNL, appeared to have exceptional field response. This proposal extended the investigation of this class of materials by examining the scaling properties of test structures made from this material that could definitively verify the preliminary observations of high field sensitivity. Although the expected scaling was observed, technical issues, such as excessive oxidation, prevented a definitive assessment of the effect. Despite the difficulties encountered, several test structures demonstrated superior performance in a ''spin-valve'' configuration that might have applications for very high density recording heads.

  2. 76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-07

    ... COMMISSION In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products... States after importation of certain dynamic random access memory and NAND flash memory devices and... the sale within the United States after importation of certain dynamic random access memory and...

  3. 76 FR 73676 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-29

    ... COMMISSION Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint... complaint entitled In Re Certain Dynamic Random Access Memory Devices, and Products Containing Same, DN 2859... within the United States after importation of certain dynamic random access memory devices, and...

  4. 76 FR 80964 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-27

    ... COMMISSION Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of... States after importation of certain dynamic random access memory devices, and products containing same by... dynamic random access memory devices, and products containing same that infringe one or more of claims...

  5. Method and device for maximizing memory system bandwidth by accessing data in a dynamically determined order

    NASA Technical Reports Server (NTRS)

    Wulf, William A. (Inventor); McKee, Sally A. (Inventor); Klenke, Robert (Inventor); Schwab, Andrew J. (Inventor); Moyer, Stephen A. (Inventor); Aylor, James (Inventor); Hitchcock, Charles Young (Inventor)

    2000-01-01

    A data processing system is disclosed which comprises a data processor and memory control device for controlling the access of information from the memory. The memory control device includes temporary storage and decision ability for determining what order to execute the memory accesses. The compiler detects the requirements of the data processor and selects the data to stream to the memory control device which determines a memory access order. The order in which to access said information is selected based on the location of information stored in the memory. The information is repeatedly accessed from memory and stored in the temporary storage until all streamed information is accessed. The information is stored until required by the data processor. The selection of the order in which to access information maximizes bandwidth and decreases the retrieval time.

  6. Development of Curie point switching for thin film, random access, memory device

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Tchernev, D. I.

    1967-01-01

    Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

  7. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    SciTech Connect

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-05-18

    This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

  8. Gate controllable resistive random access memory devices using reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Hazra, Preetam; Resmi, A. N.; Jinesh, K. B.

    2016-04-01

    The biggest challenge in the resistive random access memory (ReRAM) technology is that the basic operational parameters, such as the set and reset voltages, the current on-off ratios (hence the power), and their operational speeds, strongly depend on the active and electrode materials and their processing methods. Therefore, for its actual technological implementations, the unification of the operational parameters of the ReRAM devices appears to be a difficult task. In this letter, we show that by fabricating a resistive memory device in a thin film transistor configuration and thus applying an external gate bias, we can control the switching voltage very accurately. Taking partially reduced graphene oxide, the gate controllable switching is demonstrated, and the possible mechanisms are discussed.

  9. Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

    PubMed Central

    Xu, Zedong; Yu, Lina; Wu, Yong; Dong, Chang; Deng, Ning; Xu, Xiaoguang; Miao, J.; Jiang, Yong

    2015-01-01

    A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices. PMID:25982101

  10. Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

    NASA Astrophysics Data System (ADS)

    Xu, Zedong; Yu, Lina; Wu, Yong; Dong, Chang; Deng, Ning; Xu, Xiaoguang; Miao, J.; Jiang, Yong

    2015-05-01

    A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices.

  11. Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.

    PubMed

    Xu, Zedong; Yu, Lina; Wu, Yong; Dong, Chang; Deng, Ning; Xu, Xiaoguang; Miao, J; Jiang, Yong

    2015-01-01

    A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices. PMID:25982101

  12. Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

    NASA Astrophysics Data System (ADS)

    Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

    2016-04-01

    The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

  13. TOPICAL REVIEW Nanoscale memory devices

    NASA Astrophysics Data System (ADS)

    Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M.

    2010-10-01

    This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO2.

  14. Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Ho; Park, Jung-Hoon; Song, Yoon-Jong; Jang, Nak-Won; Joo, Heung-Jin; Kang, Seung-Kuk; Joo, Seok-Ho; Lee, Sung-Young; Kim, Kinam

    2004-04-01

    Since ferroelectric capacitors prepared by 1-mask etching are degraded after the etching, we systematically investigated the origin of the degradation. It was found that the major degradation originates from the formation of the nonstoichiometric and amorphorized Pb(ZrxTi1-x)O3 (PZT) layer on the sidewall of the PZT film during etching of the bottom electrode (BE). Therefore, to eliminate the undesired etch-damaged layer, we developed a novel etching technology using a ferroelectric (FE) sidewall spacer, which results in the enhancement of the remnant polarization after completing the capacitor etching process. Using the novel FE sidewall spacer, the sensing margin of bit-line-developed voltage was improved to 400 mV, which can guarantee highy reliable high-density ferroelectric random access memory (FRAM) devices.

  15. Garnet Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.

  16. An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

    NASA Astrophysics Data System (ADS)

    Cortese, Simone; Khiat, Ali; Carta, Daniela; Light, Mark E.; Prodromakis, Themistoklis

    2016-01-01

    Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2-x), in a metal insulator metal crossbar structure. The high voltage margin of 3 V, amongst the highest reported for monolayer selector devices, and the good current density of 104 A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device's characteristics.

  17. Computer memory access technique

    NASA Technical Reports Server (NTRS)

    Zottarelli, L. J.

    1967-01-01

    Computer memory access commutator and steering gate configuration produces bipolar current pulses while still employing only the diodes and magnetic cores of the classic commutator, thereby appreciably reducing the complexity of the memory assembly.

  18. The role of the inserted layer in resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Zhang, Dainan; Ma, Guokun; Zhang, Huaiwu; Tang, Xiaoli; Zhong, Zhiyong; Jie, Li; Su, Hua

    2016-07-01

    NiO resistive switching devices were fabricated by reactive DC magnetron sputtering at room temperature containing different inserted layers. From measurements, we demonstrated the filaments were made up by metal Co rather than the oxygen defect or other metal. A current jumping phenomenon in the SET process was observed, evidencing that the filament generating procedure was changed due to the inserted layers. In this process, we demonstrate the current jumping appeared in higher voltage region when the position of inserted layer was close to the bottom electrode. The I–V curves shifted to the positive direction as the thickness of inserted layer increasing. With the change of the number of inserted layers, SET voltages varied while the RESET voltage kept stable. According to the electrochemical metallization memory mechanism, detailed explanations on all the phenomena were addressed. This discovery is supposed of great potentials in the use of designing multi-layer RRAM devices.

  19. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory.

    PubMed

    Lue, Hang-Ting; Wu, Chien-Jang; Tseng, Tseung-Yuen

    2003-01-01

    An improved theoretical analysis on the electrical characteristics of ferroelectric memory field-effect transistor (FeMFET) is given. First, we propose a new analytical expression for the polarization versus electric field (P-E) for the ferroelectric material. It is determined by one parameter and explicitly includes both the saturated and nonsaturated hysteresis loops. Using this expression, we then examine the operational properties for two practical devices such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) as well. A double integral also has been used, in order to include the possible effects due to the nonuniform field and charge distribution along the channel of the device, to calculate the drain current of FeMFET. By using the relevant material parameters close to the (Bi, La)4Ti3O12 (BLT) system, accurate analyses on the capacitors and FeMFET's at various applied biases are made. We also address the issues of depolarization field and retention time about such a device. PMID:12578132

  20. Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer.

    PubMed

    Jang, Sung Hwan; Ryu, Ju Tae; Jung, Hyun Soo; Kim, Tae Whan

    2016-02-01

    The switching mechanisms of resistive random access memories (ReRAMs) were strongly related to the formation and rupture of conduction filaments (CFs) in the transition metal oxide (TMO) layer. The novel method approached to enhance the electrical characteristics of ReRAMs by introducing of the local insertion of the low-k dielectric layer inside the TMO layer. Simulation results showed that the insertion of the low-k dielectric layer in the TMO layer reduced the switching volume and the generation of CFs. The large variation of resistive switching properties was caused by the stochastic characteristics of the CFs, which was involved in switching by generation and rupture. The electrical characteristics of the novel ReRAMs exhibited a low reset current of below 20 microA, the high uniformity of the resistive switching, and the narrow variation of the resistance for the high resistance state. PMID:27433626

  1. Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.

    PubMed

    Park, Sung Pyo; Yoon, Doo Hyun; Tak, Young Jun; Lee, Heesoo; Kim, Hyun Jae

    2015-06-01

    Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO(x)) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO(x) RRAM devices could be one of the candidates for the development of low cost RRAM. PMID:25947353

  2. Oxide thickness dependence of resistive switching characteristics for Ni/HfOx/Pt resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Ito, Daisuke; Hamada, Yoshihumi; Otsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso

    2015-06-01

    The switching process of the conductive filament formed in Ni/HfOx/Pt resistive random access memory (ReRAM) devices were studied. We evaluated the oxide thickness dependence and temperature dependence of voltage for the Forming, Set and Reset operations for HfOx layers whose thickness are between 3.3 and 6.5 nm. The resistance of conductive filaments showed typical metallic behavior, which suggests Ni filament formation in the HfOx layer. There is a clear dependence of switching voltages for the Set and Reset processes on oxide thickness, which implies that the formation and rupture of conductive filaments occur in the entire thickness range of the HfOx layer. This finding differs from that of a previous study by Yang, which suggests the existence of a constant-thickness switching region. It is suggested that the thickness of the switching region in HfOx may be larger than 6.5 nm.

  3. Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

    SciTech Connect

    Lian, Xiaojuan Cartoixà, Xavier; Miranda, Enrique; Suñé, Jordi; Perniola, Luca; Rurali, Riccardo; Long, Shibing; Liu, Ming

    2014-06-28

    We depart from first-principle simulations of electron transport along paths of oxygen vacancies in HfO{sub 2} to reformulate the Quantum Point Contact (QPC) model in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament (CF) and its electrical properties can be provided. The new multi-scale QPC model is applied to two different HfO{sub 2}-based devices operated in the unipolar and bipolar resistive switching (RS) modes. Extraction of the QPC model parameters from a statistically significant number of CFs allows revealing significant structural differences in the CF of these two types of devices and RS modes.

  4. Atomic memory access hardware implementations

    SciTech Connect

    Ahn, Jung Ho; Erez, Mattan; Dally, William J

    2015-02-17

    Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

  5. Is random access memory random?

    NASA Technical Reports Server (NTRS)

    Denning, P. J.

    1986-01-01

    Most software is contructed on the assumption that the programs and data are stored in random access memory (RAM). Physical limitations on the relative speeds of processor and memory elements lead to a variety of memory organizations that match processor addressing rate with memory service rate. These include interleaved and cached memory. A very high fraction of a processor's address requests can be satified from the cache without reference to the main memory. The cache requests information from main memory in blocks that can be transferred at the full memory speed. Programmers who organize algorithms for locality can realize the highest performance from these computers.

  6. Ferroelectric random access memories.

    PubMed

    Ishiwara, Hiroshi

    2012-10-01

    Ferroelectric random access memory (FeRAM) is a nonvolatile memory, in which data are stored using hysteretic P-E (polarization vs. electric field) characteristics in a ferroelectric film. In this review, history and characteristics of FeRAMs are first introduced. It is described that there are two types of FeRAMs, capacitor-type and FET-type, and that only the capacitor-type FeRAM is now commercially available. In chapter 2, properties of ferroelectric films are discussed from a viewpoint of FeRAM application, in which particular attention is paid to those of Pb(Zr,Ti)O3, SrBi2Ta2O9, and BiFeO3. Then, cell structures and operation principle of the capacitor-type FeRAMs are discussed in chapter 3. It is described that the stacked technology of ferroelectric capacitors and development of new materials with large remanent polarization are important for fabricating high-density memories. Finally, in chapter 4, the optimized gate structure in ferroelectric-gate field-effect transistors is discussed and experimental results showing excellent data retention characteristics are presented. PMID:23421123

  7. Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.

    PubMed

    Yoo, Eun Ji; Lyu, Miaoqiang; Yun, Jung-Ho; Kang, Chi Jung; Choi, Young Jin; Wang, Lianzhou

    2015-10-28

    The CH3 NH3 PbI3- x Clx organic-inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties. PMID:26331363

  8. Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

    NASA Astrophysics Data System (ADS)

    Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen

    2015-05-01

    The effect of the annealing treatment of a HfO2 resistive switching layer and the memory performance of a HfO2-based resistive random access memory (cross-bar structure) device were investigated. Oxygen is released from HfO2 resistive switching layers during vacuum annealing, leading to unstable resistive switching properties. This oxygen release problem can be suppressed by inserting an Al2O3 thin film, which has a lower Gibbs free energy, between the HfO2 layer and top electrode to form a Ti/Al2O3/HfO2/TiN structure. This device structure exhibited good reliability after high temperature vacuum annealing and post metal annealing (PMA) treatments. Moreover, the endurance and retention properties of the device were also improved after the PMA treatment.

  9. Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics

    NASA Astrophysics Data System (ADS)

    Lu, Chao; Yu, Jue; Chi, Xiao-Wei; Lin, Guang-Yang; Lan, Xiao-Ling; Huang, Wei; Wang, Jian-Yuan; Xu, Jian-Fang; Wang, Chen; Li, Cheng; Chen, Song-Yan; Liu, Chunli; Lai, Hong-Kai

    2016-04-01

    A bipolar one-diode-one-resistor (1D1R) device with a Pt/HfO2/Ti/n-Si(001) structure was demonstrated. The 1D1R resistive random access memory (RRAM) device consists of a Ti/n-Si(001) diode and a Pt/HfO2/Ti resistive switching cell. By using the Ti layer as the shared electrode for both the diode and the resistive switching cell, the 1D1R device exhibits the property of stable self-compliance and the characteristic of robust resistive switching with high uniformity. The high/low resistance ratio reaches 103. The electrical RESET/SET curve does not deteriorate after 68 loops. Low-temperature studies show that the 1D1R RRAM device has a critical working temperature of 250 K, and at temperatures below 250 K, the device fails to switch its resistances.

  10. Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance

    SciTech Connect

    Tan, Chun Chia; Zhao, Rong Chong, Tow Chong; Shi, Luping

    2014-10-13

    Nitrogen-doped titanium-tungsten (N-TiW) was proposed as a tunable heater in Phase Change Random Access Memory (PCRAM). By tuning N-TiW's material properties through doping, the heater can be tailored to optimize the access speed and programming current of PCRAM. Experiments reveal that N-TiW's resistivity increases and thermal conductivity decreases with increasing nitrogen-doping ratio, and N-TiW devices displayed (∼33% to ∼55%) reduced programming currents. However, there is a tradeoff between the current and speed for heater-based PCRAM. Analysis of devices with different N-TiW heaters shows that N-TiW doping levels could be optimized to enable low RESET currents and fast access speeds.

  11. Nonvolatile random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1994-01-01

    A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

  12. Remote direct memory access

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.

    2012-12-11

    Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

  13. Set statistics in conductive bridge random access memory device with Cu/HfO{sub 2}/Pt structure

    SciTech Connect

    Zhang, Meiyun; Long, Shibing Wang, Guoming; Xu, Xiaoxin; Li, Yang; Liu, Qi; Lv, Hangbing; Liu, Ming; Lian, Xiaojuan; Miranda, Enrique; Suñé, Jordi

    2014-11-10

    The switching parameter variation of resistive switching memory is one of the most important challenges in its application. In this letter, we have studied the set statistics of conductive bridge random access memory with a Cu/HfO{sub 2}/Pt structure. The experimental distributions of the set parameters in several off resistance ranges are shown to nicely fit a Weibull model. The Weibull slopes of the set voltage and current increase and decrease logarithmically with off resistance, respectively. This experimental behavior is perfectly captured by a Monte Carlo simulator based on the cell-based set voltage statistics model and the Quantum Point Contact electron transport model. Our work provides indications for the improvement of the switching uniformity.

  14. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

    PubMed

    Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Kim, Chang-Jung; Jeon, Sanghun; Chung, U-In; Yoo, In-Kyeong; Park, Gyeong-Su; Han, Seungwu; Hwang, In Rok; Park, Bae-Ho

    2011-11-01

    Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of nanometers, there is insufficient volume available to store charge. Also, process temperatures higher than 800 °C make silicon incompatible with three-dimensional (3D) stacking structures. Here we present a device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory using resistance switching. It is demonstrated that NiO films are scalable to around 30 nm and compatible with multilevel cell technology. The device unit can be a building block for 3D stacking structure because of its simple structure and constituent, high performance, and process temperature lower than 300 °C. Memory resistance switching of NiO storage element is accompanied by an increase in density of grain boundary while threshold resistance switching of NiO switch element is controlled by current flowing through NiO film. PMID:21988144

  15. Plated wire random access memories

    NASA Technical Reports Server (NTRS)

    Gouldin, L. D.

    1975-01-01

    A program was conducted to construct 4096-work by 18-bit random access, NDRO-plated wire memory units. The memory units were subjected to comprehensive functional and environmental tests at the end-item level to verify comformance with the specified requirements. A technical description of the unit is given, along with acceptance test data sheets.

  16. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  17. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  18. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  19. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-06-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  20. Low latency memory access and synchronization

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E.; Vranas, Pavlos M.

    2007-02-06

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Each processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  1. Low latency memory access and synchronization

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E. , Vranas; Pavlos M.

    2010-10-19

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Bach processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  2. Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

    SciTech Connect

    Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.; Heindl, Ranko

    2014-05-26

    In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power present in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.

  3. Memory availability and referential access

    PubMed Central

    Johns, Clinton L.; Gordon, Peter C.; Long, Debra L.; Swaab, Tamara Y.

    2013-01-01

    Most theories of coreference specify linguistic factors that modulate antecedent accessibility in memory; however, whether non-linguistic factors also affect coreferential access is unknown. Here we examined the impact of a non-linguistic generation task (letter transposition) on the repeated-name penalty, a processing difficulty observed when coreferential repeated names refer to syntactically prominent (and thus more accessible) antecedents. In Experiment 1, generation improved online (event-related potentials) and offline (recognition memory) accessibility of names in word lists. In Experiment 2, we manipulated generation and syntactic prominence of antecedent names in sentences; both improved online and offline accessibility, but only syntactic prominence elicited a repeated-name penalty. Our results have three important implications: first, the form of a referential expression interacts with an antecedent’s status in the discourse model during coreference; second, availability in memory and referential accessibility are separable; and finally, theories of coreference must better integrate known properties of the human memory system. PMID:24443621

  4. Memory bistable mechanisms of organic memory devices

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Yu, Li-Zhen; Chen, Hung-Chun

    2010-07-01

    To investigate the memory bistable mechanisms of organic memory devices, the structure of [top Au anode/9,10-di(2-naphthyl)anthracene (ADN) active layer/bottom Au cathode] was deposited using a thermal deposition system. The Au atoms migrated into the ADN active layer was observed from the secondary ion mass spectrometry. The density of 9.6×1016 cm-3 and energy level of 0.553 eV of the induced trapping centers caused by the migrated Au atoms in the ADN active layer were calculated. The induced trapping centers did not influence the carrier injection barrier height between Au and ADN active layer. Therefore, the memory bistable behaviors of the organic memory devices were attributed to the induced trapping centers. The energy diagram was established to verify the mechanisms.

  5. Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device

    NASA Astrophysics Data System (ADS)

    Sangani, L. D. Varma; Kumar, Ch. Ravi; Krishna, M. Ghanashyam

    2016-01-01

    The characteristics of an Au/Cu x O/Au bipolar resistive random-access memory device are reported. It is demonstrated that switching parameters of this device structure can be enhanced by introducing an interfacial Al layer between the Au top electrode and the Cu x O-based dielectric layer. The set and reset voltages are, respectively, between -2.5 V to -6.0 V and +1.2 V to +3.0 V for the Al-based device. In contrast, the range of values are -0.5 V to -2.5 V and +0.5 V to +1.5 V for the set and reset voltages in the absence of Al. The Al-based device has a higher low resistance state value of 5-6 KΩ as compared to the 0.3-0.5 KΩ for the Au-based device, which leads to a 12 times lower power dissipation factor and lower reset current of 370 μA. Endurance studies carried out over 50 switching cycles show less than 2% variation in both the low resistance and high resistance values. The conduction is ohmic at low values of bias and non-ohmic at higher bias voltage which shows that the enhanced behaviour is a result of the formation of an insulating aluminum oxide layer at the Al-Cu x O interface.

  6. Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory.

    PubMed

    Zheng, Jianping; Cheng, Baochang; Wu, Fuzhang; Su, Xiaohui; Xiao, Yanhe; Guo, Rui; Lei, Shuijin

    2014-12-10

    Bipolar resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory (RRAM). Here, two-terminal devices based on individual PbS micro/nanowires with Ag electrodes are constructed, whose electrical transport depends strongly on the abundant surface and bulk trap states in micro/nanostructures. The surface trap states can be filled/emptied effectively at negative/positive bias voltage, respectively, and the corresponding rise/fall of the Fermi level induces a variation in a degenerate/nondegenerate state, resulting in low/high resistance. Moreover, the filling/emptying of trap states can be utilized as RRAM. After annealing, the surface trap state can almost be eliminated completely; while most of the bulk trap states can still remain. In the devices unannealed and annealed at both ends, therefore, the symmetrical back-to-back Fowler-Nordheim tunneling with large ON/OFF resistance ratio and Poole-Frenkel emission with poor hysteresis can be observed under cyclic sweep voltage, respectively. However, a typical bipolar RS behavior can be observed effectively in the devices annealed at one end. The acquirement of bipolar RS and nonvolatile RRAM by the modulation of electrode annealing demonstrates the abundant trap states in micro/nanomaterials will be advantageous to the development of new type electronic components. PMID:25398100

  7. Electrically Variable Resistive Memory Devices

    NASA Technical Reports Server (NTRS)

    Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

    2010-01-01

    Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

  8. Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

    DOEpatents

    Ohmacht, Martin

    2014-09-09

    In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

  9. Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Woo; Joo, Suk-Ho; Cho, Sung Lae; Son, Yoon-Ho; Lee, Kyu-Mann; Nam, Sang-Don; Park, Kun-Sang; Lee, Yong-Tak; Seo, Jung-Suk; Kim, Young-Dae; An, Hyeong-Geun; Kim, Hyoung-Joon; Jung, Yong-Ju; Heo, Jang-Eun; Lee, Moon-Sook; Park, Soon-Oh; Chung, U-In; Moon, Joo-Tae

    2002-11-01

    In the manufacturing of a 32M ferroelectric random access memory (FRAM) device on the basis of 0.25 design rule (D/R), one of the most difficult processes is to pattern a submicron capacitor module while retaining good ferroelectric properties. In this paper, we report the ferroelectric property of patterned submicron capacitor modules with a stack height of 380 nm, where the 100 nm-thick Pb(Zr, Ti)O3 (PZT) films were prepared by the sol-gel method. After patterning, overall sidewall slope was approximately 70° and cell-to-cell node separation was made to be 80 nm to prevent possible twin-bit failure in the device. Finally, several heat treatment conditions were investigated to retain the ferroelectric property of the patterned capacitor. It was found that rapid thermal processing (RTP) treatment yields better properties than conventional furnace annealing. This result is directly related to the near-surface chemistry of the PZT films, as confirmed by X-ray photoelectron spectroscopy (XPS) analysis. The resultant switching polarization value of the submicron capacitor was approximately 30 μC/cm2 measured at 3 V.

  10. Resistive switching and electrical control of ferromagnetism in a Ag/HfO₂/Nb:SrTiO₃/Ag resistive random access memory (RRAM) device at room temperature.

    PubMed

    Ren, Shaoqing; Zhu, Gengchang; Xie, Jihao; Bu, Jianpei; Qin, Hongwei; Hu, Jifan

    2016-02-10

    Electrically induced resistive switching and modulated ferromagnetism are simultaneously found in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory device at room temperature. The bipolar resistive switching (RS) can be controlled by the modification of a Schottky-like barrier with an electron injection-trapped/detrapped process at the interface of HfO2-Nb:SrTiO3. The multilevel RS transition can be observed in the reset process with larger negative voltage sweepings, which is connected to the different degree of electron detrapping in the interfacial depletion region of the HfO2 layer during the reset process. The origin of the electrical control of room-temperature ferromagnetism may be connected to the change of density of oxygen vacancies in the HfO2 film. The multilevel resistance states and the electric field controlled ferromagnetism have potential for applications in ultrahigh-density storage and magnetic logic device. PMID:26761365

  11. A Synthetic Multicellular Memory Device.

    PubMed

    Urrios, Arturo; Macia, Javier; Manzoni, Romilde; Conde, Núria; Bonforti, Adriano; de Nadal, Eulàlia; Posas, Francesc; Solé, Ricard

    2016-08-19

    Changing environments pose a challenge to living organisms. Cells need to gather and process incoming information, adapting to changes in predictable ways. This requires in particular the presence of memory, which allows different internal states to be stored. Biological memory can be stored by switches that retain information on past and present events. Synthetic biologists have implemented a number of memory devices for biological applications, mostly in single cells. It has been shown that the use of multicellular consortia provides interesting advantages to implement biological circuits. Here we show how to build a synthetic biological memory switch using an eukaryotic consortium. We engineered yeast cells that can communicate and retain memory of changes in the extracellular environment. These cells were able to produce and secrete a pheromone and sense a different pheromone following NOT logic. When the two strains were cocultured, they behaved as a double-negative-feedback motif with memory. In addition, we showed that memory can be effectively changed by the use of external inputs. Further optimization of these modules and addition of other cells could lead to new multicellular circuits that exhibit memory over a broad range of biological inputs. PMID:27439436

  12. Fast, Capacious Disk Memory Device

    NASA Technical Reports Server (NTRS)

    Muller, Ronald M.

    1990-01-01

    Device for recording digital data on, and playing back data from, memory disks has high recording or playback rate and utilizes available recording area more fully. Two disks, each with own reading/writing head, used to record data at same time. Head on disk A operates on one of tracks numbered from outside in; head on disk B operates on track of same number in sequence from inside out. Underlying concept of device applicable to magnetic or optical disks.

  13. Radiation Effects of Commercial Resistive Random Access Memories

    NASA Technical Reports Server (NTRS)

    Chen, Dakai; LaBel, Kenneth; Berg, Melanie; Wilcox, Edward; Kim, Hak; Phan, Anthony; Figueiredo, Marco; Buchner, Stephen; Khachatrian, Ani; Roche, Nicolas

    2014-01-01

    We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

  14. Dynamic computing random access memory

    NASA Astrophysics Data System (ADS)

    Traversa, F. L.; Bonani, F.; Pershin, Y. V.; Di Ventra, M.

    2014-07-01

    The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200-2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.

  15. Dynamic computing random access memory.

    PubMed

    Traversa, F L; Bonani, F; Pershin, Y V; Di Ventra, M

    2014-07-18

    The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200-2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology. PMID:24972387

  16. Resistive Switching Memory Devices Based on Proteins.

    PubMed

    Wang, Hong; Meng, Fanben; Zhu, Bowen; Leow, Wan Ru; Liu, Yaqing; Chen, Xiaodong

    2015-12-01

    Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials. PMID:25753764

  17. Conductance Quantization in Resistive Random Access Memory.

    PubMed

    Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

    2015-12-01

    The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects. PMID:26501832

  18. Conductance Quantization in Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

    2015-10-01

    The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

  19. Memory access in shared virtual memory

    SciTech Connect

    Berrendorf, R. )

    1992-01-01

    Shared virtual memory (SVM) is a virtual memory layer with a single address space on top of a distributed real memory on parallel computers. We examine the behavior and performance of SVM running a parallel program with medium-grained, loop-level parallelism on top of it. A simulator for the underlying parallel architecture can be used to examine the behavior of SVM more deeply. The influence of several parameters, such as the number of processors, page size, cold or warm start, and restricted page replication, is studied.

  20. Memory access in shared virtual memory

    SciTech Connect

    Berrendorf, R.

    1992-09-01

    Shared virtual memory (SVM) is a virtual memory layer with a single address space on top of a distributed real memory on parallel computers. We examine the behavior and performance of SVM running a parallel program with medium-grained, loop-level parallelism on top of it. A simulator for the underlying parallel architecture can be used to examine the behavior of SVM more deeply. The influence of several parameters, such as the number of processors, page size, cold or warm start, and restricted page replication, is studied.

  1. Shape memory actuated release devices

    NASA Astrophysics Data System (ADS)

    Carpenter, Bernie F.; Clark, Cary R.; Weems, Weyman

    1996-05-01

    Spacecraft require a variety of separation and release devices to accomplish mission related functions. Current off-the-shelf devices such as pyrotechnics, gas-discharge systems, paraffin wax actuators, and other electro-mechanical devices may not be able to meet future design needs. The use of pyrotechnics on advanced lightweight spacecraft, for example, will expose fragile sensors and electronics to high shock levels and sensitive optics might be subject to contamination. Other areas of consideration include reliability, safety, and cost reduction. Shape memory alloys (SMA) are one class of actuator material that provides a solution to these design problems. SMA's utilize a thermally activated reversible phase transformation to recover their original heat treated shape (up to 8% strain) or to generate high recovery stresses (> 700 Mpa) when heated above a critical transition temperature. NiTiCu alloy actuators have been fabricated to provide synchronized, shockless separation within release mechanisms. In addition, a shape memory damper has been incorporated to absorb the elastic energy of the preload bolt and to electrically reset the device during ground testing. Direct resistive heating of the SMA actuators was accomplished using a programmable electric control system. Release times less than 40 msec have been determined using 90 watt-sec of power. Accelerometer data indicate less than 500 g's of shock were generated using a bolt preload of 1350 kgs.

  2. Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices

    SciTech Connect

    Chang, Li-Chun; Kao, Hsuan-Ling; Liu, Keng-Hao

    2014-03-15

    ZnO/Cr/ZnO trilayer films sandwiched with Pt electrodes were prepared for nonvolatile resistive memory applications. The threshold voltage of a ZnO device embedded with a 3-nm Cr interlayer was approximately 50% lower than that of a ZnO monolayer device. This study investigated threshold voltage as a function of Cr thickness. Both the ZnO monolayer device and the Cr-embedded ZnO device structures exhibited resistance switching under electrical bias both before and after rapid thermal annealing (RTA) treatment, but resistive switching effects in the two cases exhibited distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrated remarkable device parameter improvements, including a lower threshold voltage, a lower write current, and a higher R{sub off}/R{sub on} ratio. Both transmission electron microscope observations and Auger electron spectroscopy revealed that the Cr charge trapping layer in Cr-embedded ZnO dispersed uniformly into the storage medium after RTA, and x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrated that the Cr atoms lost electrons to become Cr{sup 3+} ions after dispersion. These results indicated that the altered status of Cr in ZnO/Cr/ZnO trilayer films during RTA treatment was responsible for the switching mechanism transition.

  3. Magnetic Analog Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

    1991-01-01

    Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

  4. Forced Ion Migration for Chalcogenide Phase Change Memory Device

    NASA Technical Reports Server (NTRS)

    Campbell, Kristy A (Inventor)

    2013-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  5. Forced ion migration for chalcogenide phase change memory device

    NASA Technical Reports Server (NTRS)

    Campbell, Kristy A. (Inventor)

    2012-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

  6. Forced ion migration for chalcogenide phase change memory device

    NASA Technical Reports Server (NTRS)

    Campbell, Kristy A. (Inventor)

    2011-01-01

    Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

  7. Shape memory polymer medical device

    DOEpatents

    Maitland, Duncan; Benett, William J.; Bearinger, Jane P.; Wilson, Thomas S.; Small, IV, Ward; Schumann, Daniel L.; Jensen, Wayne A.; Ortega, Jason M.; Marion, III, John E.; Loge, Jeffrey M.

    2010-06-29

    A system for removing matter from a conduit. The system includes the steps of passing a transport vehicle and a shape memory polymer material through the conduit, transmitting energy to the shape memory polymer material for moving the shape memory polymer material from a first shape to a second and different shape, and withdrawing the transport vehicle and the shape memory polymer material through the conduit carrying the matter.

  8. Projected phase-change memory devices

    PubMed Central

    Koelmans, Wabe W.; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

    2015-01-01

    Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states. PMID:26333363

  9. Projected phase-change memory devices.

    PubMed

    Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

    2015-01-01

    Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states. PMID:26333363

  10. High Density Memory Based on Quantum Device Technology

    NASA Technical Reports Server (NTRS)

    vanderWagt, Paul; Frazier, Gary; Tang, Hao

    1995-01-01

    We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

  11. Electronic device aspects of neural network memories

    NASA Technical Reports Server (NTRS)

    Lambe, J.; Moopenn, A.; Thakoor, A. P.

    1985-01-01

    The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

  12. All organic memory devices utilizing fullerene molecules and insulating polymers

    NASA Astrophysics Data System (ADS)

    Kanwal, Alokik Paul

    The convergence of mobile technologies combined with stricter power requirements and increasing demands have strained the current memory technology. Newer technologies such as phase changing, ferroelectric, and magnetic random access memories are unsatisfactory in meeting the new requirements. We propose a new memory technology based on our initial discovery of charge storage in C60 molecules within poly (4-vinyl phenol) (PVP). To understand the memory potential, we created single-layer devices consisting of ˜30nm films of PVP+C60 sandwiched between aluminum (Al) electrodes. Current versus voltage (I-V) sweeps showed a significant hysteresis of 75nA, with distinguishable memory states. Room temperature charging of C60 was confirmed indirectly through capacitance versus voltage measurements and directly by monitoring the A1g characteristic peak of C60 during Raman measurements. We demonstrated memory operations by applying read-write-erase (RWE) pulses. The PVP+C60 devices exhibited memory retention for over 1 hour and response times of around 10ns. Characteristic hysteresis was demonstrated at the nanoscale. Conduction models were fitted at room temperature to the I-V curves. It was found that combination of direct and Fowler-Nordheim tunneling were the principle conduction mechanisms. For a more technologically viable memory device, we developed a multi-layer device structure, consisting of a polystyrene (PS) capping layer. The resulting asymmetrical I-V curve exhibited a hysteresis ratio of 103 . RWE cycles were measured with clearly distinguishable states. The memory retentions were measured over 2 hours and the response time around 10ns. The stability of the multi-layer devices was improved. I-V measurements at temperatures varying from 4.2 K to 298 K were performed to construct a theoretical model. The I-V curves were found to be temperature independent and exhibited similar tunneling behaviors as the single-layer devices. A simple model for conduction and

  13. System for simultaneously loading program to master computer memory devices and corresponding slave computer memory devices

    NASA Technical Reports Server (NTRS)

    Hall, William A. (Inventor)

    1993-01-01

    A bus programmable slave module card for use in a computer control system is disclosed which comprises a master computer and one or more slave computer modules interfacing by means of a bus. Each slave module includes its own microprocessor, memory, and control program for acting as a single loop controller. The slave card includes a plurality of memory means (S1, S2...) corresponding to a like plurality of memory devices (C1, C2...) in the master computer, for each slave memory means its own communication lines connectable through the bus with memory communication lines of an associated memory device in the master computer, and a one-way electronic door which is switchable to either a closed condition or a one-way open condition. With the door closed, communication lines between master computer memory (C1, C2...) and slave memory (S1, S2...) are blocked. In the one-way open condition invention, the memory communication lines or each slave memory means (S1, S2...) connect with the memory communication lines of its associated memory device (C1, C2...) in the master computer, and the memory devices (C1, C2...) of the master computer and slave card are electrically parallel such that information seen by the master's memory is also seen by the slave's memory. The slave card is also connectable to a switch for electronically removing the slave microprocessor from the system. With the master computer and the slave card in programming mode relationship, and the slave microprocessor electronically removed from the system, loading a program in the memory devices (C1, C2...) of the master accomplishes a parallel loading into the memory devices (S1, S2...) of the slave.

  14. Non-volatile magnetic random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

    1994-01-01

    Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

  15. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    SciTech Connect

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diverse manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.

  16. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    DOE PAGESBeta

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diversemore » manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.« less

  17. Nonvolatile memory devices based on self-assembled nanocrystals

    NASA Astrophysics Data System (ADS)

    Lee, Jang-Sik

    2013-06-01

    Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such as laptop computers, tablet devices, smart phones, etc. Among the many available nonvolatile memory devices, flash memory devices are of great interest to the electronics industry owing to their simple device structure, enabling high-density memory applications. Flash memory devices in which nanoparticles or nanocrystals are used as the charge-trapping elements have advantages over conventional flash memory devices because the charge-trapping layer and memory performance of the former can be readily optimized. Active research has recently been conducted to fabricate and characterize self-assembled-nanocrystal-based nonvolatile memory devices. We reviewed various strategies for fabricating nanocrystal-based nonvolatile memory devices and discussed the programmable memory properties and the device reliability characteristics of nanocrystal-based memory devices to possibly apply nanocrystal-based memory devices to those used in portable/mobile electronic devices. Finally, novel device applications such as printed/flexible/transparent electronic devices were explored based on nanocrystal-based memory devices.

  18. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

    PubMed

    Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

    2011-06-24

    Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements. PMID:21572196

  19. Novel synaptic memory device for neuromorphic computing

    PubMed Central

    Mandal, Saptarshi; El-Amin, Ammaarah; Alexander, Kaitlyn; Rajendran, Bipin; Jha, Rashmi

    2014-01-01

    This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm × 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed ~10× reduction in area and >106 times reduction in the power consumption per learning cycle. PMID:24939247

  20. Combating Memory Corruption Attacks On Scada Devices

    NASA Astrophysics Data System (ADS)

    Bellettini, Carlo; Rrushi, Julian

    Memory corruption attacks on SCADA devices can cause significant disruptions to control systems and the industrial processes they operate. However, despite the presence of numerous memory corruption vulnerabilities, few, if any, techniques have been proposed for addressing the vulnerabilities or for combating memory corruption attacks. This paper describes a technique for defending against memory corruption attacks by enforcing logical boundaries between potentially hostile data and safe data in protected processes. The technique encrypts all input data using random keys; the encrypted data is stored in main memory and is decrypted according to the principle of least privilege just before it is processed by the CPU. The defensive technique affects the precision with which attackers can corrupt control data and pure data, protecting against code injection and arc injection attacks, and alleviating problems posed by the incomparability of mitigation techniques. An experimental evaluation involving the popular Modbus protocol demonstrates the feasibility and efficiency of the defensive technique.

  1. Thin dielectric technology and memory devices

    NASA Astrophysics Data System (ADS)

    King, Ya-Chin

    With advances in technology and scaling, silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based VLSI circuits have remained dominant in data processing and memory applications. Perpetuated by the demand for high-performance and low-cost integrated circuits, the lateral dimensions of the MOSFETs are being aggressively scaled. This in turn demands scaling of the gate oxide thickness as well. Thin gate oxides present both challenges to the modeling and design device of the classical MOSFET and opportunities to explore new device designs and applications. This study investigates the effect of inversion layer quantization on the capacitance and current characteristics of thin-gate-oxide MOS transistors. In addition, this study explores the possibility of employing thin tunnel oxide for new quasi-nonvolatile memory devices. The performance limitation of a thin dielectric floating gate memory device as well as its potential for dynamic memory applications are discussed. An alternative device structure (i.e. charge-trap based memory cells) is examined by the single charge tunneling model governed by Coulomb Blockade theory. Two methods of forming charge storage nodes embedded in the gate dielectric are investigated. The resulting devices are then characterized. The first proposed device contains a charge trapping layer of silicon rich oxide (SRO) for dynamic/non-volatile memory application. This device has a similar structure as a MONOS device with SRO instead of silicon nitride for charge trapping on top of a very thin tunneling oxide (<2nm). Since it uses charge trapped in the oxide to create threshold voltage shift, the SRO memory cell is a non-destructive-read device. A new process of depositing SRO and high temperature oxide (HTO) in a single furnace step is developed to better top the control oxide thickness and improve data retention. This device achieved write and erase speeds comparable to that of a DRAM cell and longer data retention time than

  2. Complementary resistive switching behavior for conductive bridge random access memory

    NASA Astrophysics Data System (ADS)

    Zheng, Hao-Xuan; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Zhang, Rui; Chen, Kai-Huang; Wang, Ming-Hui; Zheng, Jin-Cheng; Lo, Ikai; Wu, Cheng-Hsien; Tseng, Yi-Ting; Sze, Simon M.

    2016-06-01

    In this study, a structure of Pt/Cu18Si12O70/TiN has been investigated. By co-sputtering the Cu and SiO2 targets in the switching layer, we can measure the operation mechanism of complementary resistive switching (CRS). This differs from conventional conductive bridge random access memory (CBRAM) that tends to use Cu electrodes rather than Cu18Si12O70. By changing the voltage and compliance current, we can control device operating characteristics. Because Cu distributes differently in the device depending on this setting, the operating end can be located at either the top or bottom electrode. Device current–voltage (I–V) curves are used to demonstrate that the CRS in the CBRAM device is a double-electrode operation.

  3. New memory devices based on the proton transfer process.

    PubMed

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge-saturated with oxygen or the hydroxy group-and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. PMID:26596910

  4. New memory devices based on the proton transfer process

    NASA Astrophysics Data System (ADS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  5. Memory device using movement of protons

    DOEpatents

    Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

    1998-11-03

    An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

  6. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    1998-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  7. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    2000-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  8. Ternary Flexible Electro-resistive Memory Device based on Small Molecules.

    PubMed

    Zhang, Qi-Jian; He, Jing-Hui; Zhuang, Hao; Li, Hua; Li, Na-Jun; Xu, Qing-Feng; Chen, Dong-Yun; Lu, Jian-Mei

    2016-05-20

    Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever-growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule-based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties. PMID:27061009

  9. Vortex-Core Reversal Dynamics: Towards Vortex Random Access Memory

    NASA Astrophysics Data System (ADS)

    Kim, Sang-Koog

    2011-03-01

    An energy-efficient, ultrahigh-density, ultrafast, and nonvolatile solid-state universal memory is a long-held dream in the field of information-storage technology. The magnetic random access memory (MRAM) along with a spin-transfer-torque switching mechanism is a strong candidate-means of realizing that dream, given its nonvolatility, infinite endurance, and fast random access. Magnetic vortices in patterned soft magnetic dots promise ground-breaking applications in information-storage devices, owing to the very stable twofold ground states of either their upward or downward core magnetization orientation and plausible core switching by in-plane alternating magnetic fields or spin-polarized currents. However, two technologically most important but very challenging issues --- low-power recording and reliable selection of each memory cell with already existing cross-point architectures --- have not yet been resolved for the basic operations in information storage, that is, writing (recording) and readout. Here, we experimentally demonstrate a magnetic vortex random access memory (VRAM) in the basic cross-point architecture. This unique VRAM offers reliable cell selection and low-power-consumption control of switching of out-of-plane core magnetizations using specially designed rotating magnetic fields generated by two orthogonal and unipolar Gaussian-pulse currents along with optimized pulse width and time delay. Our achievement of a new device based on a new material, that is, a medium composed of patterned vortex-state disks, together with the new physics on ultrafast vortex-core switching dynamics, can stimulate further fruitful research on MRAMs that are based on vortex-state dot arrays.

  10. Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature

    NASA Astrophysics Data System (ADS)

    Ren, Shaoqing; Zhu, Gengchang; Xie, Jihao; Bu, Jianpei; Qin, Hongwei; Hu, Jifan

    2016-02-01

    Electrically induced resistive switching and modulated ferromagnetism are simultaneously found in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory device at room temperature. The bipolar resistive switching (RS) can be controlled by the modification of a Schottky-like barrier with an electron injection-trapped/detrapped process at the interface of HfO2-Nb:SrTiO3. The multilevel RS transition can be observed in the reset process with larger negative voltage sweepings, which is connected to the different degree of electron detrapping in the interfacial depletion region of the HfO2 layer during the reset process. The origin of the electrical control of room-temperature ferromagnetism may be connected to the change of density of oxygen vacancies in the HfO2 film. The multilevel resistance states and the electric field controlled ferromagnetism have potential for applications in ultrahigh-density storage and magnetic logic device.

  11. Shape Memory Polymer Therapeutic Devices for Stroke

    SciTech Connect

    Wilson, T S; Small IV, W; Benett, W J; Bearinger, J P; Maitland, D J

    2005-10-11

    Shape memory polymers (SMPs) are attracting a great deal of interest in the scientific community for their use in applications ranging from light weight structures in space to micro-actuators in MEMS devices. These relatively new materials can be formed into a primary shape, reformed into a stable secondary shape, and then controllably actuated to recover their primary shape. The first part of this presentation will be a brief review of the types of polymeric structures which give rise to shape memory behavior in the context of new shape memory polymers with highly regular network structures recently developed at LLNL for biomedical devices. These new urethane SMPs have improved optical and physical properties relative to commercial SMPs, including improved clarity, high actuation force, and sharper actuation transition. In the second part of the presentation we discuss the development of SMP based devices for mechanically removing neurovascular occlusions which result in ischemic stroke. These devices are delivered to the site of the occlusion in compressed form, are pushed through the occlusion, actuated (usually optically) to take on an expanded conformation, and then used to dislodge and grip the thrombus while it is withdrawn through the catheter.

  12. Scaling Analysis of Nanoelectromechanical Memory Devices

    NASA Astrophysics Data System (ADS)

    Nagami, Tasuku; Tsuchiya, Yoshishige; Uchida, Ken; Mizuta, Hiroshi; Oda, Shunri

    2010-04-01

    Numerical simulation of electromechanical switching for bistable bridges in non-volatile nanoelectromechanical (NEM) memory devices suggests that performance of memory characteristics enhanced by decreasing suspended floating gate length. By conducting a two-dimensional finite element electromechanical simulation combined with a drift-diffusion analysis, we analyze the electromechanical switching operation of miniaturized structures. By shrinking the NEM floating gate length from 1000 to 100 nm, the switching (set/reset) voltage reduces from 7.2 to 2.8 V, switching time from 63 to 4.6 ns, power consumption from 16.9 to 0.13 fJ. This indicates the advantage of fast and low-power memory characteristics.

  13. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Wang, Chundong; Zhou, Li; Yan, Yan; Zhuang, Jiaqing; Sun, Qijun; Zhang, Hua; Roy, V A L

    2016-01-20

    Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics. PMID:26578160

  14. A biometric access personal optical storage device

    NASA Astrophysics Data System (ADS)

    Davies, David H.; Ray, Steve; Gurkowski, Mark; Lee, Lane

    2007-01-01

    A portable USB2.0 personal storage device that uses built-in encryption and allows data access through biometric scanning of a finger print is described. Biometric image derived templates are stored on the removable 32 mm write once (WO) media. The encrypted templates travel with the disc and allow access to the data providing the biometric feature (e.g. the finger itself) is present. The device also allows for export and import of the templates under secure key exchange protocols. The storage system is built around the small form factor optical engine that uses a tilt arm rotary actuator and front surface media.

  15. Remote direct memory access over datagrams

    DOEpatents

    Grant, Ryan Eric; Rashti, Mohammad Javad; Balaji, Pavan; Afsahi, Ahmad

    2014-12-02

    A communication stack for providing remote direct memory access (RDMA) over a datagram network is disclosed. The communication stack has a user level interface configured to accept datagram related input and communicate with an RDMA enabled network interface card (NIC) via an NIC driver. The communication stack also has an RDMA protocol layer configured to supply one or more data transfer primitives for the datagram related input of the user level. The communication stack further has a direct data placement (DDP) layer configured to transfer the datagram related input from a user storage to a transport layer based on the one or more data transfer primitives by way of a lower layer protocol (LLP) over the datagram network.

  16. Parallel Optical Random Access Memory (PORAM)

    NASA Technical Reports Server (NTRS)

    Alphonse, G. A.

    1989-01-01

    It is shown that the need to minimize component count, power and size, and to maximize packing density require a parallel optical random access memory to be designed in a two-level hierarchy: a modular level and an interconnect level. Three module designs are proposed, in the order of research and development requirements. The first uses state-of-the-art components, including individually addressed laser diode arrays, acousto-optic (AO) deflectors and magneto-optic (MO) storage medium, aimed at moderate size, moderate power, and high packing density. The next design level uses an electron-trapping (ET) medium to reduce optical power requirements. The third design uses a beam-steering grating surface emitter (GSE) array to reduce size further and minimize the number of components.

  17. Direct memory access transfer completion notification

    DOEpatents

    Chen, Dong; Giampapa, Mark E.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.; Steinmacher-Burow, Burkhard D.; Vranas, Pavlos

    2010-07-27

    Methods, compute nodes, and computer program products are provided for direct memory access (`DMA`) transfer completion notification. Embodiments include determining, by an origin DMA engine on an origin compute node, whether a data descriptor for an application message to be sent to a target compute node is currently in an injection first-in-first-out (`FIFO`) buffer in dependence upon a sequence number previously associated with the data descriptor, the total number of descriptors currently in the injection FIFO buffer, and the current sequence number for the newest data descriptor stored in the injection FIFO buffer; and notifying a processor core on the origin DMA engine that the message has been sent if the data descriptor for the message is not currently in the injection FIFO buffer.

  18. Thermomechanical analysis of shape memory devices.

    PubMed

    Trochu, F; Brailovski, V; Meunier, M A; Terriault, P; Qian, Y Y

    1996-01-01

    Shape memory alloys (SMA) are being increasingly used in various industrial applications as actuators, connectors, or damping materials. In the medical field, superelastic devices such as eyeglass frames, stents or guide catheters have come to market in the recent years. The design of SMA devices has usually been based on trial and error, since until recently no general simulation model was available to assist application engineers. The purpose of this article is to describe the computational methodology developed, validated and used for several industrial projects at Ecole Polytechnique of Montréal to simulate the thermomechanical behavior of shape memory materials. This new approach includes three main stages: experimental characterization, construction of a nonlinear material law based on dual kriging interpolation and finally, calculation of the thermomechanical response of SMA devices. For complex geometry, finite element analysis is used, but for simple devices such as springs or electrically activated SMA wires, simplified calculation methods are satisfactory. Validation results recently obtained will also be presented, and examples of industrial applications briefly reviewed. PMID:9138650

  19. Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

    NASA Astrophysics Data System (ADS)

    Zhang, H. Z.; Ang, D. S.; Yew, K. S.; Wang, X. P.

    2016-02-01

    This study shows that a majority (70%) of TiN/HfOx/TiN devices exhibit failed complementary resistance switching (CRS) after forming. In conjunction with the consistent observation of a large non-polar reset loop in the first post-forming voltage-sweep measurement, it is proposed that breakdown of the TiN/HfOx interfacial oxide layers (crucial in enabling CRS) and the accompanied formation of Ti filaments (due to Ti migration from the TiN cathode into the breakdown path) resulted in CRS failure and the observed non-polar reset behavior. This hypothesis is supported by the significant reduction or complete elimination of the large non-polar reset and CRS failure in devices with a thin Al2O3 layer incorporated at the TiN-cathode/HfOx or both TiN/HfOx interfaces. The higher breakdown field of the thin Al2O3 enables it to sustain the forming voltage until the forming process is interrupted, thus enabling CRS via oxygen exchange with the adjacent vacancy-type filament formed in the HfOx.

  20. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.; Archer, Leo B.; Brown, George A.; Wallace, Robert M.

    2000-01-01

    An enhancement of an electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure during an anneal in an atmosphere containing hydrogen gas. Device operation is enhanced by concluding this anneal step with a sudden cooling. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronics elements on the same silicon substrate.

  1. Resistive switching characteristics and mechanisms in silicon oxide memory devices

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

    2016-05-01

    Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

  2. Partial-Thickness Grooves In A VBL Memory Device

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

    1994-01-01

    Bias magnetic fields tailored to match those needed elsewhere in device. Grooves through part of thickness of magnetic garnet storage layer of vertical-Bloch-line (VBL) memory device used to confine magnetic bubble and stripe domains in desired storage areas. VBL-memory concept described in "Vertical-Bloch-Line Memory" (NPO-18467).

  3. Ferroelectric-carbon nanotube memory devices.

    PubMed

    Kumar, Ashok; Shivareddy, Sai G; Correa, Margarita; Resto, Oscar; Choi, Youngjin; Cole, Matthew T; Katiyar, Ram S; Scott, James F; Amaratunga, Gehan A J; Lu, Haidong; Gruverman, Alexei

    2012-04-27

    One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT-inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Low-loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Current-voltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectric-carbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices. PMID:22460805

  4. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  5. Rotary stepping device with memory metal actuator

    NASA Technical Reports Server (NTRS)

    Jamieson, Robert S. (Inventor)

    1987-01-01

    A rotary stepping device includes a rotatable shaft which is driven by means of a coiled spring clutch which is alternately tightened to grip and rotate the shaft and released to return it to a resting position. An actuator formed of a memory metal is used to pull the spring clutch to tighten it and rotate the shaft. The actuator is activated by heating it above its critical temperature and is returned to an elongated configuration by means of the force of the spring cloth.

  6. A flexible organic resistance memory device for wearable biomedical applications

    NASA Astrophysics Data System (ADS)

    Cai, Yimao; Tan, Jing; YeFan, Liu; Lin, Min; Huang, Ru

    2016-07-01

    Parylene is a Food and Drug Administration (FDA)-approved material which can be safely used within the human body and it is also offers chemically inert and flexible merits. Here, we present a flexible parylene-based organic resistive random access memory (RRAM) device suitable for wearable biomedical application. The proposed device is fabricated through standard lithography and pattern processes at room temperature, exhibiting the feasibility of integration with CMOS circuits. This organic RRAM device offers a high storage window (>104), superior retention ability and immunity to disturbing. In addition, brilliant mechanical and electrical stabilities of this device are demonstrated when under harsh bending (bending cycle >500, bending radius <10 mm). Finally, the underlying mechanism for resistance switching of this kind of device is discussed, and metallic conducting filament formation and annihilation related to oxidization/redox of Al and Al anions migrating in the parylene layer can be attributed to resistance switching in this device. These advantages reveal the significant potential of parylene-based flexible RRAM devices for wearable biomedical applications.

  7. A flexible organic resistance memory device for wearable biomedical applications.

    PubMed

    Cai, Yimao; Tan, Jing; YeFan, Liu; Lin, Min; Huang, Ru

    2016-07-01

    Parylene is a Food and Drug Administration (FDA)-approved material which can be safely used within the human body and it is also offers chemically inert and flexible merits. Here, we present a flexible parylene-based organic resistive random access memory (RRAM) device suitable for wearable biomedical application. The proposed device is fabricated through standard lithography and pattern processes at room temperature, exhibiting the feasibility of integration with CMOS circuits. This organic RRAM device offers a high storage window (>10(4)), superior retention ability and immunity to disturbing. In addition, brilliant mechanical and electrical stabilities of this device are demonstrated when under harsh bending (bending cycle >500, bending radius <10 mm). Finally, the underlying mechanism for resistance switching of this kind of device is discussed, and metallic conducting filament formation and annihilation related to oxidization/redox of Al and Al anions migrating in the parylene layer can be attributed to resistance switching in this device. These advantages reveal the significant potential of parylene-based flexible RRAM devices for wearable biomedical applications. PMID:27242345

  8. Resistive random access memory enabled by carbon nanotube crossbar electrodes.

    PubMed

    Tsai, Cheng-Lin; Xiong, Feng; Pop, Eric; Shim, Moonsub

    2013-06-25

    We use single-walled carbon nanotube (CNT) crossbar electrodes to probe sub-5 nm memory domains of thin AlOx films. Both metallic and semiconducting CNTs effectively switch AlOx bits between memory states with high and low resistance. The low-resistance state scales linearly with CNT series resistance down to ∼10 MΩ, at which point the ON-state resistance of the AlOx filament becomes the limiting factor. Dependence of switching behavior on the number of cross-points suggests a single channel to dominate the overall characteristics in multi-crossbar devices. We demonstrate ON/OFF ratios up to 5 × 10(5) and programming currents of 1 to 100 nA with few-volt set/reset voltages. Remarkably low reset currents enable a switching power of 10-100 nW and estimated switching energy as low as 0.1-10 fJ per bit. These results are essential for understanding the ultimate scaling limits of resistive random access memory at single-nanometer bit dimensions. PMID:23705675

  9. Sericin for resistance switching device with multilevel nonvolatile memory.

    PubMed

    Wang, Hong; Meng, Fanben; Cai, Yurong; Zheng, Liyan; Li, Yuangang; Liu, Yuanjun; Jiang, Yueyue; Wang, Xiaotian; Chen, Xiaodong

    2013-10-11

    Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development. PMID:23893500

  10. Analysis of a Memory Device Failure

    NASA Technical Reports Server (NTRS)

    Nicolas, David P.; Devaney, John; Gores, Mark; Dicken, Howard

    1998-01-01

    The recent failure of a vintage memory device presented a unique challenge to failure analysts. Normally device layouts, fabrication parameters and other technical information were available to assist the analyst in the analysis. However, this device was out of production for many years and the manufacturer was no longer in business, so the information was not available. To further complicate this analysis, the package leads were all but removed making additional electrical testing difficult. Under these conditions, new and innovative methods were used to analyze the failure. The external visual exam, radiography, PIND, and leak testing were performed with nominal results. Since electrical testing was precluded by the short lead lengths, the device was delidded to expose the internal structures for microscopic examination. No failure mechanism was identified. The available electrical data suggested an ESD or low level EOS type mechanism which left no visible surface damage. Due to parallel electrical paths, electrical probing on the chip failed to locate the failure site. Two non-destructive Scanning Electron Microscopy techniques, CIVA (Charge Induced Voltage Alteration) and EBIC (Electron Beam Induced Current), and a liquid crystal decoration technique which detects localized heating were employed to aid in the analysis. CIVA and EBIC isolated two faults in the input circuitry, and the liquid crystal technique further localized two hot spots in regions on two input gates. Removal of the glassivation and metallization revealed multiple failure sites located in the gate oxide of two input transistors suggesting machine (testing) induced damage.

  11. Memory and Spin Injection Devices Involving Half Metals

    DOE PAGESBeta

    Shaughnessy, M.; Snow, Ryan; Damewood, L.; Fong, C. Y.

    2011-01-01

    We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

  12. Memory device for two-dimensional radiant energy array computers

    NASA Technical Reports Server (NTRS)

    Schaefer, D. H.; Strong, J. P., III (Inventor)

    1977-01-01

    A memory device for two dimensional radiant energy array computers was developed, in which the memory device stores digital information in an input array of radiant energy digital signals that are characterized by ordered rows and columns. The memory device contains a radiant energy logic storing device having a pair of input surface locations for receiving a pair of separate radiant energy digital signal arrays and an output surface location adapted to transmit a radiant energy digital signal array. A regenerative feedback device that couples one of the input surface locations to the output surface location in a manner for causing regenerative feedback is also included

  13. BCH codes for large IC random-access memory systems

    NASA Technical Reports Server (NTRS)

    Lin, S.; Costello, D. J., Jr.

    1983-01-01

    In this report some shortened BCH codes for possible applications to large IC random-access memory systems are presented. These codes are given by their parity-check matrices. Encoding and decoding of these codes are discussed.

  14. Guide wire extension for shape memory polymer occlusion removal devices

    DOEpatents

    Maitland, Duncan J.; Small, IV, Ward; Hartman, Jonathan

    2009-11-03

    A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

  15. The Dynamics of Access to Groups in Working Memory

    ERIC Educational Resources Information Center

    Farrell, Simon; Lelievre, Anna

    2012-01-01

    The finding that participants leave a pause between groups when attempting serial recall of temporally grouped lists has been taken to indicate access to a hierarchical representation of the list in working memory. An alternative explanation is that the dynamics of serial recall solely reflect output (rather than memorial) processes, with the…

  16. Scaling constraints in nanoelectronic random-access memories.

    PubMed

    Amsinck, Christian J; Di Spigna, Neil H; Nackashi, David P; Franzon, Paul D

    2005-10-01

    Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the potential to present significant area advantages (4 to 6F(2)) compared to CMOS-based systems. The scalability of these conductivity-switched RAM arrays is examined by establishing criteria for correct functionality based on the readout margin. Using a combined circuit theoretical modelling and simulation approach, the impact of both the device and interconnect architecture on the scalability of a conductivity-state memory system is quantified. This establishes criteria showing the conditions and on/off ratios for the large-scale integration of molecular devices, guiding molecular device design. With 10% readout margin on the resistive load, a memory device needs to have an on/off ratio of at least 7 to be integrated into a 64 x 64 array, while an on/off ratio of 43 is necessary to scale the memory to 512 x 512. PMID:20818005

  17. Direct access inter-process shared memory

    DOEpatents

    Brightwell, Ronald B; Pedretti, Kevin; Hudson, Trammell B

    2013-10-22

    A technique for directly sharing physical memory between processes executing on processor cores is described. The technique includes loading a plurality of processes into the physical memory for execution on a corresponding plurality of processor cores sharing the physical memory. An address space is mapped to each of the processes by populating a first entry in a top level virtual address table for each of the processes. The address space of each of the processes is cross-mapped into each of the processes by populating one or more subsequent entries of the top level virtual address table with the first entry in the top level virtual address table from other processes.

  18. Memory for recently accessed visual attributes.

    PubMed

    Jiang, Yuhong V; Shupe, Joshua M; Swallow, Khena M; Tan, Deborah H

    2016-08-01

    Recent reports have suggested that the attended features of an item may be rapidly forgotten once they are no longer relevant for an ongoing task (attribute amnesia). This finding relies on a surprise memory procedure that places high demands on declarative memory. We used intertrial priming to examine whether the representation of an item's identity is lost completely once it becomes task irrelevant. If so, then the identity of a target on one trial should not influence performance on the next trial. In 3 experiments, we replicated the finding that a target's identity is poorly recognized in a surprise memory test. However, we also observed location and identity repetition priming across consecutive trials. These data suggest that, although explicit recognition on a surprise memory test may be impaired, some information about a particular target's identity can be retained after it is no longer needed for a task. (PsycINFO Database Record PMID:26844575

  19. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  20. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    SciTech Connect

    Ando, K. Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-05-07

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

  1. Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

    NASA Astrophysics Data System (ADS)

    Zheng, Qi-Wen; Yu, Xue-Feng; Cui, Jiang-Wei; Guo, Qi; Ren, Di-Yuan; Cong, Zhong-Chao; Zhou, Hang

    2014-10-01

    Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

  2. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

    PubMed Central

    Pradhan, Sangram K.; Xiao, Bo; Mishra, Saswat; Killam, Alex; Pradhan, Aswini K.

    2016-01-01

    Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices. PMID:27240537

  3. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

    NASA Astrophysics Data System (ADS)

    Pradhan, Sangram K.; Xiao, Bo; Mishra, Saswat; Killam, Alex; Pradhan, Aswini K.

    2016-05-01

    Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices.

  4. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.

    PubMed

    Pradhan, Sangram K; Xiao, Bo; Mishra, Saswat; Killam, Alex; Pradhan, Aswini K

    2016-01-01

    Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention, and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices. PMID:27240537

  5. Assessing standards of vascular access device care.

    PubMed

    McGuire, Rose

    Vascular access devices (VADs) are essential in health care as they provide vital access for treatment including the infusion of medication, fluids, blood products and nutritional supplements. However, their invasive nature predisposes patients to potential complications, primarily bloodstream infections. This article examines the current standards of VAD care and assesses compliance with current guidelines (national and trust policy) in one hospital setting utilising a practice audit. The audit was conducted in a 500-bed district general hospital over 6 non-consecutive week days. The medical division where the audit took place had 13 wards with 288 beds. A total of 120 VADs were audited, averaging n=9.2 per ward (with a range of 4-18 on each ward). The results demonstrated a collective non-compliance rate of 48%. Although overall compliance was 52%, a poor standard of care was highlighted across the division for all components of the care elements. The post-insertion care of VADs is an essential component of a comprehensive strategy to prevent complications. Consequently, initiatives such as audit, education and feedback should be used in an effort to improve practice and maintain optimal care. PMID:25904534

  6. Remote Memory Access Protocol Target Node Intellectual Property

    NASA Technical Reports Server (NTRS)

    Haddad, Omar

    2013-01-01

    The MagnetoSpheric Multiscale (MMS) mission had a requirement to use the Remote Memory Access Protocol (RMAP) over its SpaceWire network. At the time, no known intellectual property (IP) cores were available for purchase. Additionally, MMS preferred to implement the RMAP functionality with control over the low-level details of the design. For example, not all the RMAP standard functionality was needed, and it was desired to implement only the portions of the RMAP protocol that were needed. RMAP functionality had been previously implemented in commercial off-the-shelf (COTS) products, but the IP core was not available for purchase. The RMAP Target IP core is a VHDL (VHSIC Hardware Description Language description of a digital logic design suitable for implementation in an FPGA (field-programmable gate array) or ASIC (application-specific integrated circuit) that parses SpaceWire packets that conform to the RMAP standard. The RMAP packet protocol allows a network host to access and control a target device using address mapping. This capability allows SpaceWire devices to be managed in a standardized way that simplifies the hardware design of the device, as well as the development of the software that controls the device. The RMAP Target IP core has some features that are unique and not specified in the RMAP standard. One such feature is the ability to automatically abort transactions if the back-end logic does not respond to read/write requests within a predefined time. When a request times out, the RMAP Target IP core automatically retracts the request and returns a command response with an appropriate status in the response packet s header. Another such feature is the ability to control the SpaceWire node or router using RMAP transactions in the extended address range. This allows the SpaceWire network host to manage the SpaceWire network elements using RMAP packets, which reduces the number of protocols that the network host needs to support.

  7. Scaling Linear Algebra Kernels using Remote Memory Access

    SciTech Connect

    Krishnan, Manoj Kumar; Lewis, Robert R.; Vishnu, Abhinav

    2010-09-13

    This paper describes the scalability of linear algebra kernels based on remote memory access approach. The current approach differs from the other linear algebra algorithms by the explicit use of shared memory and remote memory access (RMA) communication rather than message passing. It is suitable for clusters and scalable shared memory systems. The experimental results on large scale systems (Linux-Infiniband cluster, Cray XT) demonstrate consistent performance advantages over ScaLAPACK suite, the leading implementation of parallel linear algebra algorithms used today. For example, on a Cray XT4 for a matrix size of 102400, our RMA-based matrix multiplication achieved over 55 teraflops while ScaLAPACK’s pdgemm measured close to 42 teraflops on 10000 processes.

  8. A Cerebellar-model Associative Memory as a Generalized Random-access Memory

    NASA Technical Reports Server (NTRS)

    Kanerva, Pentti

    1989-01-01

    A versatile neural-net model is explained in terms familiar to computer scientists and engineers. It is called the sparse distributed memory, and it is a random-access memory for very long words (for patterns with thousands of bits). Its potential utility is the result of several factors: (1) a large pattern representing an object or a scene or a moment can encode a large amount of information about what it represents; (2) this information can serve as an address to the memory, and it can also serve as data; (3) the memory is noise tolerant--the information need not be exact; (4) the memory can be made arbitrarily large and hence an arbitrary amount of information can be stored in it; and (5) the architecture is inherently parallel, allowing large memories to be fast. Such memories can become important components of future computers.

  9. Low-power resistive random access memory by confining the formation of conducting filaments

    NASA Astrophysics Data System (ADS)

    Huang, Yi-Jen; Shen, Tzu-Hsien; Lee, Lan-Hsuan; Wen, Cheng-Yen; Lee, Si-Chen

    2016-06-01

    Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiOx/silver nanoparticles/TiOx/AlTiOx, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiOx layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

  10. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  11. 75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-25

    ... COMMISSION In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing Same... random access memory semiconductors and products containing same, including memory modules, by reason of... after importation of certain dynamic random access memory semiconductors or products containing the...

  12. TiO2 thin film based transparent flexible resistive switching random access memory

    NASA Astrophysics Data System (ADS)

    Pham, Kim Ngoc; Dung Hoang, Van; Tran, Cao Vinh; Thang Phan, Bach

    2016-03-01

    In our work we have fabricated TiO2 based resistive switching devices both on transparent substrates (ITO, IGZO/glass) and transparent flexible substrate (ITO/PET). All devices demonstrate the reproducibility of forming free bipolar resistive switching with high transparency in the visible light range (∼80% at the wavelength of 550 nm). Particularly, transparent and flexible device exhibits stable resistive switching performance at the initial state (flat) and even after bending state up to 500 times with curvature radius of 10% compared to flat state. The achieved characteristics of resistive switching of TiO2 thin films seem to be promising for transparent flexible random access memory.

  13. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    SciTech Connect

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P.

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  14. Radiation dosimetry using three-dimensional optical random access memories

    NASA Technical Reports Server (NTRS)

    Moscovitch, M.; Phillips, G. W.

    2001-01-01

    Three-dimensional optical random access memories (3D ORAMs) are a new generation of high-density data storage devices. Binary information is stored and retrieved via a light induced reversible transformation of an ensemble of bistable photochromic molecules embedded in a polymer matrix. This paper describes the application of 3D ORAM materials to radiation dosimetry. It is shown both theoretically and experimentally, that ionizing radiation in the form of heavy charged particles is capable of changing the information originally stored on the ORAM material. The magnitude and spatial distribution of these changes are used as a measure of the absorbed dose, particle type and energy. The effects of exposure on 3D ORAM materials have been investigated for a variety of particle types and energies, including protons, alpha particles and 12C ions. The exposed materials are observed to fluoresce when exposed to laser light. The intensity and the depth of the fluorescence is dependent on the type and energy of the particle to which the materials were exposed. It is shown that these effects can be modeled using Monte Carlo calculations. The model provides a better understanding of the properties of these materials. which should prove useful for developing systems for charged particle and neutron dosimetry/detector applications. c2001 Published by Elsevier Science B.V.

  15. SLAC All Access: Vacuum Microwave Device Department

    SciTech Connect

    Haase, Andy

    2012-10-09

    The Vacuum Microwave Device Department (VMDD) builds the devices that make SLAC's particle accelerators go. These devices, called klystrons, generate intense waves of microwave energy that rocket subatomic particles up to nearly the speed of light.

  16. SLAC All Access: Vacuum Microwave Device Department

    ScienceCinema

    Haase, Andy

    2014-06-13

    The Vacuum Microwave Device Department (VMDD) builds the devices that make SLAC's particle accelerators go. These devices, called klystrons, generate intense waves of microwave energy that rocket subatomic particles up to nearly the speed of light.

  17. Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

    PubMed

    Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

    2009-04-01

    We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 x 10(-13)-1.0 x 10(-14) S cm(-1). The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 10(10). Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 10(11). The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices. PMID:19420490

  18. Novel nano materials for high performance logic and memory devices

    NASA Astrophysics Data System (ADS)

    Das, Saptarshi

    mobility with the layer thickness. The non-monotonic trend suggests that in order to harvest the maximum potential of MoS2 for high performance device applications, a layer thickness in the range of 6-12 nm would be ideal. Finally using scandium contacts on 10nm thick exfoliated MoS2 flakes that are covered by a 15nm ALD grown Al2O3 film, record high mobility of 700cm2/Vs is achieved at room-temperature which is extremely encouraging for the design of high performance logic devices. The destructive nature of the readout process in Ferroelectric Random Access Memories (FeRAMs) is one of the major limiting factors for their wide scale commercialization. Utilizing Ferroelectric Field-Effect Transistor RAM (FeTRAM) instead solves the destructive read out problem, but at the expense of introducing crystalline ferroelectrics that are hard to integrate into CMOS. In order to address these challenges a novel, fully functional, CMOS compatible, One-Transistor-One-Transistor (1T1T) memory cell architecture using an organic ferroelectric -- PVDF-TrFE -- as the memory storage unit (gate oxide) and a silicon nanowire as the memory read out unit (channel material) is proposed and experimentally demonstrated. While evaluating the scaling potential of the above mentioned organic FeTRAM, it is found that the switching time and switching voltage of this organic copolymer PVDF-TrFE exhibits an unexpected scaling behavior as a function of the lateral device dimensions. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interchain and intrachain interaction of the copolymer - resulting in a power-law dependence of the switching field on the device area (ESW alpha ACH0.1) that is ultimately responsible for the decrease in the switching time and switching voltage. These findings are encouraging since they indicate that scaling the switching voltage and switching time without aggressively scaling the copolymer thickness occurs naturally while scaling the

  19. Direct memory access transfer completion notification

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.; Parker, Jeffrey J.

    2011-02-15

    DMA transfer completion notification includes: inserting, by an origin DMA engine on an origin node in an injection first-in-first-out (`FIFO`) buffer, a data descriptor for an application message to be transferred to a target node on behalf of an application on the origin node; inserting, by the origin DMA engine, a completion notification descriptor in the injection FIFO buffer after the data descriptor for the message, the completion notification descriptor specifying a packet header for a completion notification packet; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; sending, by the origin DMA engine, the completion notification packet to a local reception FIFO buffer using a local memory FIFO transfer operation; and notifying, by the origin DMA engine, the application that transfer of the message is complete in response to receiving the completion notification packet in the local reception FIFO buffer.

  20. Magnetic tunnel junction based spintronic logic and memory devices

    NASA Astrophysics Data System (ADS)

    Yao, Xiaofeng

    2011-12-01

    The development of semiconductor devices is limited by the high power consumption and further physical dimension reduction. Spintronic devices, especially the magnetic tunnel junction (MTJ) based devices, have advantages of non-volatility, reconfigurable capability, fast-switching speed, small-dimension, and compatibility to semiconductor devices, which is a promising candidate for future logic and memory devices. However, the previously proposed MTJ logic devices have been operated independently and therefore are limited to only basic logic operations. Consequently, the MTJ device has only been used as ancillary device in the circuit, rather than the main computation component. In this thesis, study has been done on both spintronic logic and memory devices. In the first part, systematic study has been performed on MTJ based logic devices in order to expand the functionalities and properties of MTJ devices. Basic logic cell with three-input has been designed and simulated. Nano-magnetic-channel has been proposed, which is the first design to realize the communication between the MTJ logic cells. With basic logic unit as a building block, a spintronic logic circuit has been designed with MTJ as the dominant component. HSPICE simulation has been done for this spintronic logic circuit, which acts as an Arithmetic Logic Unit. In the spintronic memory device part, study has been focused on the fundamental study on the current induced switching in MTJ devices with hybrid free layer. With hybrid free layer, magnetic non-uniformity is introduced along the current direction, which induces extra spin torque component. Unique current-induced switching has been observed and studied in the hybrid free layer MTJ. Adiabatic spin torque, which is introduced by spatial non-uniform magnetization in the hybrid free layer, plays an important role for the unique switching. By tuning the bias field, single-polar current switching was achieved in this hybrid MTJ device, which gives the

  1. Access Analysis-Based Tight Localization of Abstract Memories

    NASA Astrophysics Data System (ADS)

    Oh, Hakjoo; Brutschy, Lucas; Yi, Kwangkeun

    On-the-fly localization of abstract memory states is vital for economical abstract interpretation of imperative programs. Such localization is sometimes called "abstract garbage collection" or "framing". In this article we present a new memory localization technique that is more effective than the conventional reachability-based approach. Our technique is based on a key observation that collecting the reachable memory parts is too conservative and the accessed parts are usually tiny subsets of the reachable. Our technique first estimates, by an efficient pre-analysis, the set of locations that will be accessed during the analysis of each code block. Then the main analysis uses the access-set results to trim the memory entries before analyzing code blocks. In experiments with an industrial-strength global C static analyzer, the technique is applied right before analyzing each procedure's body and reduces the average analysis time and memory by 92.1% and 71.2%, respectively, without sacrificing the analysis precision. Localizing more frequently such as at loop bodies and basic blocks as well as procedure bodies, the generalized localization additionally reduces analysis time by an average of 31.8%.

  2. Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

    NASA Astrophysics Data System (ADS)

    Ismail, M.; W. Abbas, M.; M. Rana, A.; Talib, I.; E., Ahmed; Y. Nadeem, M.; L. Tsai, T.; U., Chand; A. Shah, N.; Hussain, M.; Aziz, A.; T. Bhatti, M.

    2014-12-01

    Highly repeatable multilevel bipolar resistive switching in Ti/CeOx/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (> 104 s) with an acceptable resistance ratio (~102), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching in CeOx RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.

  3. A new laterally conductive bridge random access memory by fully CMOS logic compatible process

    NASA Astrophysics Data System (ADS)

    Hsieh, Min-Che; Chin, Yung-Wen; Lin, Yu-Cheng; Chih, Yu-Der; Tsai, Kan-Hsueh; Tsai, Ming-Jinn; King, Ya-Chin; Lin, Chrong Jung

    2014-01-01

    This paper proposes a novel laterally conductive bridge random access memory (L-CBRAM) module using a fully CMOS logic compatible process. A contact buffer layer between the poly-Si and contact plug enables the lateral Ti-based atomic layer to provide on/off resistance ratio via bipolar operations. The proposed device reached more than 100 pulse cycles with an on/off ratio over 10 and very stable data retention under high temperature operations. These results make this Ti-based L-CBRAM cell a promising solution for advanced embedded multi-time programmable (MTP) memory applications.

  4. Feasibility of self-structured current accessed bubble devices in spacecraft recording systems

    NASA Technical Reports Server (NTRS)

    Nelson, G. L.; Krahn, D. R.; Dean, R. H.; Paul, M. C.; Lo, D. S.; Amundsen, D. L.; Stein, G. A.

    1985-01-01

    The self-structured, current aperture approach to magnetic bubble memory is described. Key results include: (1) demonstration that self-structured bubbles (a lattice of strongly interacting bubbles) will slip by one another in a storage loop at spacings of 2.5 bubble diameters, (2) the ability of self-structured bubbles to move past international fabrication defects (missing apertures) in the propagation conductors (defeat tolerance), and (3) moving bubbles at mobility limited speeds. Milled barriers in the epitaxial garnet are discussed for containment of the bubble lattice. Experimental work on input/output tracks, storage loops, gates, generators, and magneto-resistive detectors for a prototype device are discussed. Potential final device architectures are described with modeling of power consumption, data rates, and access times. Appendices compare the self-structured bubble memory from the device and system perspectives with other non-volatile memory technologies.

  5. Quantifying Locality in the Memory Access Patterns of HPCApplications

    SciTech Connect

    Weinberg, Jonathan; Snavely, Allan; McCracken, Michael O.; Strohmaier, Erich

    2005-07-25

    Several benchmarks for measuring memory performance of HPC systems along dimensions of spatial and temporal memory locality have recently been proposed. However, little is understood about the relationships of these benchmarks to real applications and to each other. In this paper, we propose a methodology for producing architecture-neutral characterizations of the spatial and temporal locality exhibited by the memory access patterns of applications. We demonstrate that the results track intuitive notions of spatial and temporal locality on several synthetic and application benchmarks. We employ the methodology to analyze the memory performance components of the HPC Challenge Benchmarks, the Apex-MAP benchmark, and their relationships to each other and other benchmarks and applications. We show that this analysis can be used to both increase understanding of the benchmarks and enhance their usefulness by mapping them, along with applications, to a 2-D space along axes of spatial and temporal locality.

  6. Organic memory device with polyaniline nanoparticles embedded as charging elements

    NASA Astrophysics Data System (ADS)

    Kim, Yo-Han; Kim, Minkeun; Oh, Sewook; Jung, Hunsang; Kim, Yejin; Yoon, Tae-Sik; Kim, Yong-Sang; Ho Lee, Hyun

    2012-04-01

    Polyaniline nanoparticles (PANI NPs) were synthesized and fabricated as charging elements for organic memory devices. The PANI NPs charging layer was self-assembled by epoxy-amine bonds between 3-glycidylpropyl trimethoxysilane functionalized dielectrics and PANI NPs. A memory window of 5.8 V (ΔVFB) represented by capacitance-voltage hysteresis was obtained for metal-pentacene-insulator-silicon capacitor. In addition, program/erase operations controlled by gate bias (-/+90 V) were demonstrated in the PANI NPs embedded pentacene thin film transistor device with polyvinylalcohol dielectric on flexible polyimide substrate. These results can be extended to development of fully organic-based electronic device.

  7. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

    PubMed Central

    Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

    2011-01-01

    The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

  8. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih; Sze, Simon M.

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  9. Novel nano materials for high performance logic and memory devices

    NASA Astrophysics Data System (ADS)

    Das, Saptarshi

    mobility with the layer thickness. The non-monotonic trend suggests that in order to harvest the maximum potential of MoS2 for high performance device applications, a layer thickness in the range of 6-12 nm would be ideal. Finally using scandium contacts on 10nm thick exfoliated MoS2 flakes that are covered by a 15nm ALD grown Al2O3 film, record high mobility of 700cm2/Vs is achieved at room-temperature which is extremely encouraging for the design of high performance logic devices. The destructive nature of the readout process in Ferroelectric Random Access Memories (FeRAMs) is one of the major limiting factors for their wide scale commercialization. Utilizing Ferroelectric Field-Effect Transistor RAM (FeTRAM) instead solves the destructive read out problem, but at the expense of introducing crystalline ferroelectrics that are hard to integrate into CMOS. In order to address these challenges a novel, fully functional, CMOS compatible, One-Transistor-One-Transistor (1T1T) memory cell architecture using an organic ferroelectric -- PVDF-TrFE -- as the memory storage unit (gate oxide) and a silicon nanowire as the memory read out unit (channel material) is proposed and experimentally demonstrated. While evaluating the scaling potential of the above mentioned organic FeTRAM, it is found that the switching time and switching voltage of this organic copolymer PVDF-TrFE exhibits an unexpected scaling behavior as a function of the lateral device dimensions. The phenomenological theory, that explains this abnormal scaling trend, involves in-plane interchain and intrachain interaction of the copolymer - resulting in a power-law dependence of the switching field on the device area (ESW alpha ACH0.1) that is ultimately responsible for the decrease in the switching time and switching voltage. These findings are encouraging since they indicate that scaling the switching voltage and switching time without aggressively scaling the copolymer thickness occurs naturally while scaling the

  10. Resistive random access memory utilizing ferritin protein with Pt nanoparticles

    NASA Astrophysics Data System (ADS)

    Uenuma, Mutsunori; Kawano, Kentaro; Zheng, Bin; Okamoto, Naofumi; Horita, Masahiro; Yoshii, Shigeo; Yamashita, Ichiro; Uraoka, Yukiharu

    2011-05-01

    This study reports controlled single conductive paths found in resistive random access memory (ReRAM) formed by embedding Pt nanoparticles (Pt NPs) in NiO film. Homogeneous Pt NPs produced and placed by ferritin protein produce electric field convergence which leads to controlled conductive path formation. The ReRAM with Pt NPs shows stable switching behavior. A Pt NP density decrease results in an increase of OFF state resistance and decrease of forming voltage, whereas ON resistance was independent of the Pt NP density, which indicates that a single metal NP in a memory cell will achieve low power and stable operation.

  11. Integrated, nonvolatile, high-speed analog random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor)

    1994-01-01

    This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

  12. Magnet/Hall-Effect Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

  13. Performance Evaluation of Remote Memory Access (RMA) Programming on Shared Memory Parallel Computers

    NASA Technical Reports Server (NTRS)

    Jin, Hao-Qiang; Jost, Gabriele; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The purpose of this study is to evaluate the feasibility of remote memory access (RMA) programming on shared memory parallel computers. We discuss different RMA based implementations of selected CFD application benchmark kernels and compare them to corresponding message passing based codes. For the message-passing implementation we use MPI point-to-point and global communication routines. For the RMA based approach we consider two different libraries supporting this programming model. One is a shared memory parallelization library (SMPlib) developed at NASA Ames, the other is the MPI-2 extensions to the MPI Standard. We give timing comparisons for the different implementation strategies and discuss the performance.

  14. Paging memory from random access memory to backing storage in a parallel computer

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

    2013-05-21

    Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

  15. 77 FR 36951 - Gastroenterology-Urology Devices; Reclassification of Implanted Blood Access Devices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-20

    ... requirement for premarket approval for implanted blood access devices (52 FR 17732 at 17738, May 11, 1987). In 2009, FDA published an order for the submission of information on implanted blood access devices (74 FR... the Device In the preamble to the proposed rule (46 FR 7616, January 23, 1981), the...

  16. An UV photochromic memory effect in proton-based WO{sub 3} electrochromic devices

    SciTech Connect

    Zhang Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-17

    We report an UV photochromic memory effect on a standard proton-based WO{sub 3} electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  17. UV Photochromic Memory Effect in Proton-Based WO3 Electrochromic Devices

    SciTech Connect

    Zhang, Y.; Lee, S. H.; Mascarenhas, A.; Deb, S. K.

    2008-12-01

    We report an UV photochromic memory effect on a standard proton-based WO{sub 3} electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  18. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-01

    We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  19. Light programmable organic transistor memory device based on hybrid dielectric

    NASA Astrophysics Data System (ADS)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  20. One electron-controlled multiple-valued dynamic random-access-memory

    NASA Astrophysics Data System (ADS)

    Kye, H. W.; Song, B. N.; Lee, S. E.; Kim, J. S.; Shin, S. J.; Choi, J. B.; Yu, Y.-S.; Takahashi, Y.

    2016-02-01

    We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET). The gate of a SET is designed to be connected to a plurality of DRAM unit cells that are arrayed at intersections of word lines and bitlines. In this SET-DRAM hybrid scheme, the multiple switching characteristics of SET enables multiple value data stored in a DRAM unit cell, and this increases the storage functionality of the device. Moreover, since refreshing data requires only a small amount of SET driving current, this enables device operating with low standby power consumption.

  1. Hydrogen doping in HfO2 resistance change random access memory

    NASA Astrophysics Data System (ADS)

    Duncan, D.; Magyari-Köpe, B.; Nishi, Y.

    2016-01-01

    The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO2 resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

  2. Thermal effect of Ge2Sb2Te5 in phase change memory device

    NASA Astrophysics Data System (ADS)

    Li, Jun-Tao; Liu, Bo; Song, Zhi-Tang; Ren, Kun; Zhu, Min; Xu, Jia; Ren, Jia-Dong; Feng, Gao-Ming; Ren, Wan-Chun; Tong, Hao

    2014-08-01

    In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of Ge2Sb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.

  3. Phase-change Random Access Memory: A Scalable Technology

    SciTech Connect

    Raoux, S.; Burr, G; Breitwisch, M; Rettner, C; Chen, Y; Shelby, R; Salinga, M; Krebs, D; Chen, S; Lung, H

    2008-01-01

    Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms. We then discuss experiments that directly address the scaling properties of the phase-change materials themselves, including studies of phase transitions in both nanoparticles and ultrathin films as a function of particle size and film thickness. This work in materials directly motivated the successful creation of a series of prototype PCRAM devices, which have been fabricated and tested at phase-change material cross-sections with extremely small dimensions as low as 3 nm x 20 nm. These device measurements provide a clear demonstration of the excellent scaling potential offered by this technology, and they are also consistent with the scaling behavior predicted by extensive device simulations. Finally, we discuss issues of device integration and cell design, manufacturability, and reliability.

  4. Design of a Multi-Level/Analog Ferroelectric Memory Device

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2006-01-01

    Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  5. Pattern recognition with magnonic holographic memory device

    NASA Astrophysics Data System (ADS)

    Kozhevnikov, A.; Gertz, F.; Dudko, G.; Filimonov, Y.; Khitun, A.

    2015-04-01

    In this work, we present experimental data demonstrating the possibility of using magnonic holographic devices for pattern recognition. The prototype eight-terminal device consists of a magnetic matrix with micro-antennas placed on the periphery of the matrix to excite and detect spin waves. The principle of operation is based on the effect of spin wave interference, which is similar to the operation of optical holographic devices. Input information is encoded in the phases of the spin waves generated on the edges of the magnonic matrix, while the output corresponds to the amplitude of the inductive voltage produced by the interfering spin waves on the other side of the matrix. The level of the output voltage depends on the combination of the input phases as well as on the internal structure of the magnonic matrix. Experimental data collected for several magnonic matrixes show the unique output signatures in which maxima and minima correspond to specific input phase patterns. Potentially, magnonic holographic devices may provide a higher storage density compare to optical counterparts due to a shorter wavelength and compatibility with conventional electronic devices. The challenges and shortcoming of the magnonic holographic devices are also discussed.

  6. Pattern recognition with magnonic holographic memory device

    SciTech Connect

    Kozhevnikov, A.; Dudko, G.; Filimonov, Y.; Gertz, F.; Khitun, A.

    2015-04-06

    In this work, we present experimental data demonstrating the possibility of using magnonic holographic devices for pattern recognition. The prototype eight-terminal device consists of a magnetic matrix with micro-antennas placed on the periphery of the matrix to excite and detect spin waves. The principle of operation is based on the effect of spin wave interference, which is similar to the operation of optical holographic devices. Input information is encoded in the phases of the spin waves generated on the edges of the magnonic matrix, while the output corresponds to the amplitude of the inductive voltage produced by the interfering spin waves on the other side of the matrix. The level of the output voltage depends on the combination of the input phases as well as on the internal structure of the magnonic matrix. Experimental data collected for several magnonic matrixes show the unique output signatures in which maxima and minima correspond to specific input phase patterns. Potentially, magnonic holographic devices may provide a higher storage density compare to optical counterparts due to a shorter wavelength and compatibility with conventional electronic devices. The challenges and shortcoming of the magnonic holographic devices are also discussed.

  7. Nonvolatile GaAs Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Stadler, Henry L.; Wu, Jiin-Chuan

    1994-01-01

    Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

  8. Dynamic Optical Gratings Accessed by Reversible Shape Memory.

    PubMed

    Tippets, Cary A; Li, Qiaoxi; Fu, Yulan; Donev, Eugenii U; Zhou, Jing; Turner, Sara A; Jackson, Anne-Martine S; Ashby, Valerie Sheares; Sheiko, Sergei S; Lopez, Rene

    2015-07-01

    Shape memory polymers (SMPs) have been shown to accurately replicate photonic structures that produce tunable optical responses, but in practice, these responses are limited by the irreversibility of conventional shape memory processes. Here, we report the intensity modulation of a diffraction grating utilizing two-way reversible shape changes. Reversible shifting of the grating height was accomplished through partial melting and recrystallization of semicrystalline poly(octylene adipate). The concurrent variations of the grating shape and diffraction intensity were monitored via atomic force microscopy and first order diffraction measurements, respectively. A maximum reversibility of the diffraction intensity of 36% was repeatable over multiple cycles. To that end, the reversible shape memory process is shown to broaden the functionality of SMP-based optical devices. PMID:26081101

  9. If memory serves, will language? Later verbal accessibility of early memories.

    PubMed

    Bauer, P J; Kroupina, M G; Schwade, J A; Dropik, P L; Wewerka, S S

    1998-01-01

    Of major interest to those concerned with early mnemonic process and function is the question of whether early memories likely encoded without the benefit of language later are accessible to verbal report. In the context of a controlled laboratory study, we examined this question in children who were 16 and 20 months at the time of exposure to specific target events and who subsequently were tested for their memories of the events after a delay of either 6 or 12 months (at 22-32 months) and then again at 3 years. At the first delayed-recall test, children evidenced memory both nonverbally and verbally. Nonverbal mnemonic expression was related to age at the time of test; verbal mnemonic expression was related to verbal fluency at the time of test. At the second delayed-recall test, children evidenced continued accessibility of their early memories. Verbal mnemonic expression was related to previous mnemonic expression, both nonverbal and verbal, each of which contributed unique variance. The relevance of these findings on memory for controlled laboratory events for issues of memory for traumatic experiences is discussed. PMID:9886220

  10. Polymeric memory device with dual electrical and optical reading modes

    NASA Astrophysics Data System (ADS)

    Deng, Xian-Yu; Wong, King Y.

    2011-04-01

    We report a write-once-read-many polymeric memory device that can be read by both electrical and optical methods. The device consists of two layers of conjugated polymer blends sandwiched between a metal electrode and a transparent electrode. One of the polymer blends functions as an ion-trapping, electrochromic layer, while the other polymer blend functions as a light-emitting electrochemical cell. Recording is facilitated by applying a negative writing voltage on the device. Reading can be performed by either probing with a low positive voltage, probing with a laser beam, or by measuring the light emission intensity from the device.

  11. Ratioless full-complementary 12-transistor static random access memory for ultra low supply voltage operation

    NASA Astrophysics Data System (ADS)

    Kondo, Takahiro; Yamamoto, Hiromasa; Hoketsu, Satoko; Imi, Hitoshi; Okamura, Hitoshi; Nakamura, Kazuyuki

    2015-04-01

    In this study, a ratioless full-complementary 12-transistor static random access memory (SRAM) was developed and measured to evaluate its operation under an ultra low supply voltage range. The ratioless SRAM design concept enables a memory cell design that is free from the consideration of the static noise margin (SNM). Furthermore, it enables a SRAM function without the restriction of transistor parameter (W/L) settings and the dependence on the variability of device characteristics. The test chips that include both conventional 6-transistor SRAM cells and the ratioless full-complementary 12-transistor SRAM cells were developed by a 180 nm CMOS process to compare their stable operations under an ultralow supply voltage condition. The measured results show that the ratioless full-complementary 12-transistor SRAM has superior immunity to device variability, and its inherent operating ability at the supply voltage of 0.22 V was experimentally confirmed.

  12. Self-assembled tin dioxide for forming-free resistive random-access memory application

    NASA Astrophysics Data System (ADS)

    Hong, Ying-Jhan; Wang, Tsang-Hsuan; Wei, Shih-Yuan; Chang, Pin; Yew, Tri-Rung

    2016-06-01

    A novel resistive switching structure, tin-doped indium oxide (ITO)/SnO2‑ x (defined as SnO2 with oxygen vacancies)/SnS was demonstrated with a set voltage of 0.38 V, a reset voltage of ‑0.15 V, a ratio of high resistance to low resistance of 544, and forming-free and nonlinear current–voltage (I–V) characteristics. The interface of the ITO and the self-assembled SnO2‑ x contributed to the resistive switching behavior. This device showed great potential for resistive random access memory (RRAM) application and solving the sneak path problem in cross-bar memory arrays. Furthermore, a nanostructured resistive switching device was demonstrated successfully.

  13. Automatic memory management policies for low power, memory limited, and delay intolerant devices

    NASA Astrophysics Data System (ADS)

    Jahid, Md. Abu

    Mobile devices such as smartphones and tablets are energy and memory limited, and implement graphical user interfaces that are intolerant of computational delays. Mobile device platforms supporting apps implemented in languages that require automatic memory management, such as the Dalvik (Java) virtual machine within Google's Android, have become dominant. It is essential that automatic memory management avoid causing unacceptable interface delays while responsibly managing energy and memory resource usage. Dalvik's automatic memory management policies for heap growth and garbage collection scheduling utilize heuristics tuned to minimize memory footprint. These policies result in only marginally acceptable response times and garbage collection signicantly contributes to apps' CPU time and therefore energy consumption. The primary contributions of this research include a characterization of Dalvik's "baseline" automatic memory management policy, the development of a new "adaptive" policy, and an investigation of the performance of this policy. The investigation indicates that this adaptive policy consumes less CPU time and improves interactive performance at the cost of increasing memory footprint size by an acceptable amount.

  14. Retention time in multiple-tunnel junction memory device

    NASA Astrophysics Data System (ADS)

    Jalil, M. B. A.; Wagner, M.; Ahmed, H.

    1999-01-01

    A computationally inexpensive approximation is obtained for the retention time of charges stored on a memory node of a multiple-tunnel junction (MTJ) memory device, based on previous simplifying assumptions by Jensen and Martinis. The approximation takes into account both thermally assisted single electron tunneling and higher order processes, or cotunneling and is in good agreement with a full master equation simulation of the device up to a temperature T≈T0/10, where T0=e2/kBC. For the case of a memory device formed within a δ-doped layer in GaAs, it is predicted that leakage due to single tunneling starts to dominate over cotunneling at temperatures above T≈T0/60, and that a sharp reduction in retention time occurs above T≈T0/100. Our analysis also shows that with the typical dimensions of present devices, a memory lifetime of a year requires the stringent condition of an 11-junction MTJ operated at below 1 K.

  15. Camera memory study for large space telescope. [charge coupled devices

    NASA Technical Reports Server (NTRS)

    Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

    1975-01-01

    Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

  16. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    PubMed

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content. PMID:27483856

  17. Computational design of digital and memory biological devices.

    PubMed

    Rodrigo, Guillermo; Jaramillo, Alfonso

    2007-12-01

    The use of combinatorial optimization techniques with computational design allows the development of automated methods to design biological systems. Automatic design integrates design principles in an unsupervised algorithm to sample a larger region of the biological network space, at the topology and parameter levels. The design of novel synthetic transcriptional networks with targeted behaviors will be key to understand the design principles underlying biological networks. In this work, we evolve transcriptional networks towards a targeted dynamics, by using a library of promoters and coding sequences, to design a complex biological memory device. The designed sequential transcription network implements a JK-Latch, which is fully predictable and richer than other memory devices. Furthermore, we present designs of transcriptional devices behaving as logic gates, and we show how to create digital behavior from analog promoters. Our procedure allows us to propose a scenario for the evolution of multi-functional genetic networks. In addition, we discuss the decomposability of regulatory networks in terms of genetic modules to develop a given cellular function. Summary. We show how to use an automated procedure to design logic and sequential transcription circuits. This methodology will allow advancing the rational design of biological devices to more complex systems, and we propose the first design of a biological JK-latch memory device. PMID:19003443

  18. Micro devices using shape memory polymer patches for mated connections

    DOEpatents

    Lee, Abraham P.; Fitch, Joseph P.

    2000-01-01

    A method and micro device for repositioning or retrieving miniature devices located in inaccessible areas, such as medical devices (e.g., stents, embolic coils, etc.) located in a blood vessel. The micro repositioning or retrieving device and method uses shape memory polymer (SMP) patches formed into mating geometries (e.g., a hoop and a hook) for re-attachment of the deposited medical device to a catheter or guidewire. For example, SMP or other material hoops are formed on the medical device to be deposited in a blood vessel, and SMP hooks are formed on the micro device attached to a guidewire, whereby the hooks on the micro device attach to the hoops on the medical device, or vice versa, enabling deposition, movement, re-deposit, or retrieval of the medical device. By changing the temperature of the SMP hooks, the hooks can be attached to or released from the hoops located on the medical device. An exemplary method for forming the hooks and hoops involves depositing a sacrificial thin film on a substrate, patterning and processing the thin film to form openings therethrough, depositing or bonding SMP materials in the openings so as to be attached to the substrate, and removing the sacrificial thin film.

  19. Bioorganic nanodots for non-volatile memory devices

    NASA Astrophysics Data System (ADS)

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Litsyn, Simon; Natan, Amir; Roizin, Yakov; Rosenwaks, Yossi; Szwarcman, Daniel; Rosenman, Gil

    2013-12-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ˜2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

  20. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  1. Bioorganic nanodots for non-volatile memory devices

    SciTech Connect

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

    2013-12-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

  2. Complex dynamics of semantic memory access in reading.

    PubMed

    Baggio, Giosué; Fonseca, André

    2012-02-01

    Understanding a word in context relies on a cascade of perceptual and conceptual processes, starting with modality-specific input decoding, and leading to the unification of the word's meaning into a discourse model. One critical cognitive event, turning a sensory stimulus into a meaningful linguistic sign, is the access of a semantic representation from memory. Little is known about the changes that activating a word's meaning brings about in cortical dynamics. We recorded the electroencephalogram (EEG) while participants read sentences that could contain a contextually unexpected word, such as 'cold' in 'In July it is very cold outside'. We reconstructed trajectories in phase space from single-trial EEG time series, and we applied three nonlinear measures of predictability and complexity to each side of the semantic access boundary, estimated as the onset time of the N400 effect evoked by critical words. Relative to controls, unexpected words were associated with larger prediction errors preceding the onset of the N400. Accessing the meaning of such words produced a phase transition to lower entropy states, in which cortical processing becomes more predictable and more regular. Our study sheds new light on the dynamics of information flow through interfaces between sensory and memory systems during language processing. PMID:21715401

  3. Some Improvements in Utilization of Flash Memory Devices

    NASA Technical Reports Server (NTRS)

    Gender, Thomas K.; Chow, James; Ott, William E.

    2009-01-01

    Two developments improve the utilization of flash memory devices in the face of the following limitations: (1) a flash write element (page) differs in size from a flash erase element (block), (2) a block must be erased before its is rewritten, (3) lifetime of a flash memory is typically limited to about 1,000,000 erases, (4) as many as 2 percent of the blocks of a given device may fail before the expected end of its life, and (5) to ensure reliability of reading and writing, power must not be interrupted during minimum specified reading and writing times. The first development comprises interrelated software components that regulate reading, writing, and erasure operations to minimize migration of data and unevenness in wear; perform erasures during idle times; quickly make erased blocks available for writing; detect and report failed blocks; maintain the overall state of a flash memory to satisfy real-time performance requirements; and detect and initialize a new flash memory device. The second development is a combination of hardware and software that senses the failure of a main power supply and draws power from a capacitive storage circuit designed to hold enough energy to sustain operation until reading or writing is completed.

  4. Administering an epoch initiated for remote memory access

    SciTech Connect

    Blocksome, Michael A; Miller, Douglas R

    2014-03-18

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  5. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A; Miller, Douglas R

    2012-10-23

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  6. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A.; Miller, Douglas R.

    2013-01-01

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  7. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film

    NASA Astrophysics Data System (ADS)

    Yi, Mingdong; Cao, Yong; Ling, Haifeng; Du, Zhuzhu; Wang, Laiyuan; Yang, Tao; Fan, Quli; Xie, Linghai; Huang, Wei

    2014-05-01

    We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (˜104), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (˜105) and stable retention characteristics (>103 s) under lower programming voltage (-1 V and -0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different energy level distributions of the charge traps in GO film, and the different charge injection ability from the Ag electrode to GO film, which is caused by the different annealing temperatures of the GO film.

  8. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.

    PubMed

    Yi, Mingdong; Cao, Yong; Ling, Haifeng; Du, Zhuzhu; Wang, Laiyuan; Yang, Tao; Fan, Quli; Xie, Linghai; Huang, Wei

    2014-05-01

    We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (∼10(4)), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (∼10(5)) and stable retention characteristics (>10(3) s) under lower programming voltage (-1 V and -0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different energy level distributions of the charge traps in GO film, and the different charge injection ability from the Ag electrode to GO film, which is caused by the different annealing temperatures of the GO film. PMID:24739543

  9. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    NASA Astrophysics Data System (ADS)

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-01

    A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  10. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  11. Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

    PubMed Central

    2014-01-01

    We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp3-type carbon filament through hydrogenation process. PMID:24475979

  12. A stochastic simulation method for the assessment of resistive random access memory retention reliability

    SciTech Connect

    Berco, Dan Tseng, Tseung-Yuen

    2015-12-21

    This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO{sub 2} device with a double layer ZnO/ZrO{sub 2} one, and obtain results which are in good agreement with experimental data.

  13. A stochastic simulation method for the assessment of resistive random access memory retention reliability

    NASA Astrophysics Data System (ADS)

    Berco, Dan; Tseng, Tseung-Yuen

    2015-12-01

    This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO2 device with a double layer ZnO/ZrO2 one, and obtain results which are in good agreement with experimental data.

  14. Shape-memory starch for resorbable biomedical devices.

    PubMed

    Beilvert, A; Chaubet, F; Chaunier, L; Guilois, S; Pavon-Djavid, G; Letourneur, D; Meddahi-Pellé, A; Lourdin, D

    2014-01-01

    Shape-memory resorbable materials were obtained by extrusion-cooking of potato starch with 20% glycerol under usual conditions. They presented an efficient shape-memory with a high recovery ratio (Rr>90%). Their recovery could be triggered at 37°C in water. After water immersion at 37°C, the modulus decreased from 1GPa to 2.4MPa and remained almost constant over 21 days. Gamma-ray sterilization did not have a dramatic impact on their mechanical properties, despite a large decrease of molecular mass analyzed by asymmetrical flow field-flow fractionation coupled with multi-angle laser light scattering (AFFFF-MALLS). Samples implanted in a rat model exhibited normal tissue integration with a low inflammatory response. Thus, as previously investigated in the case of shape-memory synthetic polymers, natural starch, without chemical grafting, can now be considered for manufacturing innovative biodegradable devices for less-invasive surgery. PMID:24274502

  15. Efficient Memory Access with NumPy Global Arrays using Local Memory Access

    SciTech Connect

    Daily, Jeffrey A.; Berghofer, Dan C.

    2013-08-03

    This paper discusses the work completed working with Global Arrays of data on distributed multi-computer systems and improving their performance. The tasks completed were done at Pacific Northwest National Laboratory in the Science Undergrad Laboratory Internship program in the summer of 2013 for the Data Intensive Computing Group in the Fundamental and Computational Sciences DIrectorate. This work was done on the Global Arrays Toolkit developed by this group. This toolkit is an interface for programmers to more easily create arrays of data on networks of computers. This is useful because scientific computation is often done on large amounts of data sometimes so large that individual computers cannot hold all of it. This data is held in array form and can best be processed on supercomputers which often consist of a network of individual computers doing their computation in parallel. One major challenge for this sort of programming is that operations on arrays on multiple computers is very complex and an interface is needed so that these arrays seem like they are on a single computer. This is what global arrays does. The work done here is to use more efficient operations on that data that requires less copying of data to be completed. This saves a lot of time because copying data on many different computers is time intensive. The way this challenge was solved is when data to be operated on with binary operations are on the same computer, they are not copied when they are accessed. When they are on separate computers, only one set is copied when accessed. This saves time because of less copying done although more data access operations were done.

  16. The effect of ultraviolet irradiation on data retention characteristics of resistive random access memory

    NASA Astrophysics Data System (ADS)

    Kinoshita, Kentaro; Kimura, Kouhei; Ohmi, Koutoku; Kishida, Satoru

    It is getting more and more serious to generate soft-errors by cosmic radiation, with increasing the density of memory devices. Therefore, the irradiation resistance of resistance random access memory (ReRAM) to cosmic radiation has to be elucidated for practical use. In this paper, we investigated the data retention characteristics against ultraviolet irradiation to ReRAM with Pt/NiO/ITO structure. Soft-errors were confirmed to be caused by ultraviolet irradiation in both low and high resistance states. The analysis of irradiation frequency dependence of data retention characteristics suggested that electronic excitation by the irradiation caused the errors. Based on a statistically estimated soft-error rate, the errors were suggested to be caused by aggregation and dispersion of oxygen vacancies due to the generation of electron-hole pairs and valence change by the ultraviolet irradiation.

  17. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    PubMed

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device. PMID:25958498

  18. RFID and Memory Devices Fabricated Integrally on Substrates

    NASA Technical Reports Server (NTRS)

    Schramm, Harry F.

    2004-01-01

    Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

  19. Conductive-bridging random access memory: challenges and opportunity for 3D architecture.

    PubMed

    Jana, Debanjan; Roy, Sourav; Panja, Rajeswar; Dutta, Mrinmoy; Rahaman, Sheikh Ziaur; Mahapatra, Rajat; Maikap, Siddheswar

    2015-01-01

    The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias. However, the growth dynamics of the metallic filament in different switching materials are still debated. All CBRAM devices are switching under an operation current of 0.1 μA to 1 mA, and an operation voltage of ±2 V is also needed. The device can reach a low current of 5 pA; however, current compliance-dependent reliability is a challenging issue. Although a chalcogenide-based material has opportunity to have better endurance as compared to an oxide-based material, data retention and integration with the complementary metal-oxide-semiconductor (CMOS) process are also issues. Devices with bilayer switching materials show better resistive switching characteristics as compared to those with a single switching layer, especially a program/erase endurance of >10(5) cycles with a high speed of few nanoseconds. Multi-level cell operation is possible, but the stability of the high resistance state is also an important reliability concern. These devices show a good data retention of >10(5) s at >85°C. However, more study is needed to achieve a 10-year guarantee of data retention for non-volatile memory application. The crossbar memory is benefited for high density with low power operation. Some CBRAM devices as a chip have been reported for proto-typical production. This review shows that operation current should be optimized for few microamperes with a maintaining speed of few nanoseconds, which will have challenges and also opportunities for three-dimensional (3D) architecture. PMID:25977660

  20. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.

    PubMed

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-21

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. PMID:26695561

  1. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  2. A triple quantum dot based nano-electromechanical memory device

    NASA Astrophysics Data System (ADS)

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-01

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, "ON" and "OFF" states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  3. [Proceedings maintenance of the devices of venous access].

    PubMed

    Castro, Carmen Noya; Casamayor, Conchita Martínez; Trillo, Inmaculada Serrano

    2007-10-01

    An extended version of the winning Poster Prize 3M Tegaderm 2007. It shows the proceedings maintenance of the devices of venous access settle down, based on the best scientific evidence available and consensus with the professionals of infirmary of the work centre. PMID:18274391

  4. Spin-Hall-assisted magnetic random access memory

    SciTech Connect

    Brink, A. van den Swagten, H. J. M.; Koopmans, B.; Cosemans, S.; Manfrini, M.; Van Roy, W.; Min, T.; Cornelissen, S.; Vaysset, A.; Departement elektrotechniek , KU Leuven, Kasteelpark Arenberg 10, B-3001 Heverlee

    2014-01-06

    We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.

  5. Materials selection for oxide-based resistive random access memories

    SciTech Connect

    Guo, Yuzheng; Robertson, John

    2014-12-01

    The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO{sub 2}, TiO{sub 2}, Ta{sub 2}O{sub 5}, and Al{sub 2}O{sub 3}, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta{sub 2}O{sub 5} RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.

  6. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth.

    PubMed

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-01

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

  7. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

    PubMed Central

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-01

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

  8. Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

    NASA Astrophysics Data System (ADS)

    Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

    2016-01-01

    Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07377d

  9. Electrical Characterization of the RCA CDP1822SD Random Access Memory, Volume 1, Appendix a

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    Electrical characteristization tests were performed on 35 RCA CDP1822SD, 256-by-4-bit, CMOS, random access memories. The tests included three functional tests, AC and DC parametric tests, a series of schmoo plots, rise/fall time screening, and a data retention test. All tests were performed on an automated IC test system with temperatures controlled by a thermal airstream unit. All the functional tests, the data retention test, and the AC and DC parametric tests were performed at ambient temperatures of 25 C, -20 C, -55 C, 85 C, and 125 C. The schmoo plots were performed at ambient temperatures of 25 C, -55 C, and 125 C. The data retention test was performed at 25 C. Five devices failed one or more functional tests and four of these devices failed to meet the expected limits of a number of AC parametric tests. Some of the schmoo plots indicated a small degree of interaction between parameters.

  10. Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles.

    PubMed

    Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2016-08-21

    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process. PMID:27456192

  11. Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

    NASA Astrophysics Data System (ADS)

    Ta, Thi Kieu Hanh; Pham, Kim Ngoc; Dao, Thi Bang Tam; Tran, Dai Lam; Phan, Bach Thang

    2016-05-01

    The electrical conduction and associated resistance switching mechanism of top electrode/WO3/bottom electrode devices [top electrode (TE): Ag, Ti; bottom electrode (BE): Pt, fluorine-doped tin oxide] have been investigated. The direction of switching and switching ability depended on both the top and bottom electrode material. Multiple electrical conduction mechanisms control the leakage current of such switching devices, including trap-controlled space-charge, ballistic, Ohmic, and Fowler-Nordheim tunneling effects. The transition between electrical conduction states is also linked to the switching (SET-RESET) process. This is the first report of ballistic conduction in research into resistive random-access memory. The associated resistive switching mechanisms are also discussed.

  12. Detection and response to unauthorized access to a communication device

    DOEpatents

    Smith, Rhett; Gordon, Colin

    2015-09-08

    A communication gateway consistent with the present disclosure may detect unauthorized physical or electronic access and implement security actions in response thereto. A communication gateway may provide a communication path to an intelligent electronic device (IED) using an IED communications port configured to communicate with the IED. The communication gateway may include a physical intrusion detection port and a network port. The communication gateway may further include control logic configured to evaluate physical intrusion detection signal. The control logic may be configured to determine that the physical intrusion detection signal is indicative of an attempt to obtain unauthorized access to one of the communication gateway, the IED, and a device in communication with the gateway; and take a security action based upon the determination that the indication is indicative of the attempt to gain unauthorized access.

  13. Taxing Working Memory during Retrieval of Emotional Memories Does Not Reduce Memory Accessibility When Cued with Reminders

    PubMed Central

    van Schie, Kevin; Engelhard, Iris M.; van den Hout, Marcel A.

    2015-01-01

    Earlier studies have shown that when individuals recall an emotional memory while simultaneously doing a demanding dual-task [e.g., playing Tetris, mental arithmetic, making eye movements (EM)], this reduces self-reported vividness and emotionality of the memory. These effects have been found up to 1 week later, but have largely been confined to self-report ratings. This study examined whether this dual-tasking intervention reduces memory performance (i.e., accessibility of emotional memories). Undergraduates (N = 60) studied word-image pairs and rated the retrieved image on vividness and emotionality when cued with the word. Then they viewed the cues and recalled the images with or without making EM. Finally, they re-rated the images on vividness and emotionality. Additionally, fragments from images from all conditions were presented and participants identified which fragment was paired earlier with which cue. Findings showed no effect of the dual-task manipulation on self-reported ratings and latency responses. Several possible explanations for the lack of effects are discussed, but the cued recall procedure in our experiment seems to explain the absence of effects best. The study demonstrates boundaries to the effects of the “dual-tasking” procedure. PMID:25729370

  14. Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

    NASA Astrophysics Data System (ADS)

    Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2016-08-01

    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02602h

  15. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    NASA Technical Reports Server (NTRS)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  16. Accessibility versus Accuracy in Retrieving Spatial Memory: Evidence for Suboptimal Assumed Headings

    ERIC Educational Resources Information Center

    Yerramsetti, Ashok; Marchette, Steven A.; Shelton, Amy L.

    2013-01-01

    Orientation dependence in spatial memory has often been interpreted in terms of accessibility: Object locations are encoded relative to a reference orientation that affords the most accurate access to spatial memory. An open question, however, is whether people naturally use this "preferred" orientation whenever recalling the space. We…

  17. 75 FR 44989 - In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-30

    ... December 10, 2008, based on a complaint filed by Rambus, Inc. of Los Altos, California (``Rambus''). 73 FR... COMMISSION In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory... chips having synchronous dynamic random access memory controllers and product containing the same...

  18. The Cost of Accessing an Object's Feature Stored in Visual Working Memory

    PubMed Central

    Woodman, Geoffrey F.; Vecera, Shaun P.

    2010-01-01

    The effects of accessing or retrieving information held in working memory are poorly understood compared to what we know about the nature of information storage in this limited-capacity memory system. Previous studies of object-based attention have often relied upon memory-demanding tasks, and this work could indicate that accessing a piece of information in visual working memory may have deleterious effects upon the other representations being maintained. In the present study, we tested the hypothesis that accessing a feature of an object represented in visual working memory degrades the representations of the other stored objects’ features. Our findings support this hypothesis and point to important new questions about the nature of effects resulting from accessing information stored in visual working memory. PMID:21221413

  19. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems.

    PubMed

    Shehzad, Danish; Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models. PMID:27413363

  20. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems

    PubMed Central

    Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models. PMID:27413363

  1. Multiferroic tunnel junction of Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 for magneto-electric random access memory devices

    NASA Astrophysics Data System (ADS)

    Barman, Rahul; Kaur, Davinder

    2016-02-01

    A multiferroic tunnel junction composed of two ferromagnetic shape memory alloy electrodes separated by a multiferroic barrier was fabricated from a Ni50.3Mn36.9Sb12.8/BiFeO3/Ni50.3Mn36.9Sb12.8 trilayer. A large exchange bias field (HEB) of ˜59 Oe at room temperature was found for this trilayer. Besides the exchange bias effect in this multiferroic tunnel junction, one of the most interesting results was the magnetoelectric effect, which is manifested by the transfer of strain from the Ni50.3Mn36.9Sb12.8 electrodes to the BiFeO3 tunnel barrier. The magnetic field dependence of the junction resistance was observed at room temperature after aligning the ferroelectric polarization of the BiFeO3 barrier with the poling voltage of ±3 V. A change in junction resistance was also observed between the magnetic parallel and antiparallel states of the electrodes, suggesting an entire flip of the magnetic domains against the magnetic field. After reversing the polarization of the BiFeO3 barrier between the two directions, the entire R-H curve was shifted so that both parallel and antiparallel resistances switched to different values. Hence, after applying positive and negative voltages, two parallel and two antiparallel states, i.e., four distinct states were observed. These four states will encode quaternary information by both ferromagnetic and ferroelectric order-parameters, to read non-destructively by resistance measurement. These findings may be helpful towards reconfigurable logic spintronics architectures in next generation magneto-electric random access memory devices.

  2. Working memory capacity and retrieval limitations from long-term memory: an examination of differences in accessibility.

    PubMed

    Unsworth, Nash; Spillers, Gregory J; Brewer, Gene A

    2012-01-01

    In two experiments, the locus of individual differences in working memory capacity and long-term memory recall was examined. Participants performed categorical cued and free recall tasks, and individual differences in the dynamics of recall were interpreted in terms of a hierarchical-search framework. The results from this study are in accordance with recent theorizing suggesting a strong relation between working memory capacity and retrieval from long-term memory. Furthermore, the results also indicate that individual differences in categorical recall are partially due to differences in accessibility. In terms of accessibility of target information, two important factors drive the difference between high- and low-working-memory-capacity participants. Low-working-memory-capacity participants fail to utilize appropriate retrieval strategies to access cues, and they also have difficulty resolving cue overload. Thus, when low-working-memory-capacity participants were given specific cues that activated a smaller set of potential targets, their recall performance was the same as that of high-working-memory-capacity participants. PMID:22800472

  3. Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

    SciTech Connect

    Lee, Seunghyup; Kim, Heejin; Yong, Kijung; Yun, Dong-Jin; Rhee, Shi-Woo

    2009-12-28

    This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM). The Au/ZnO/SS structure was fabricated by radio frequency sputtering deposition of a ZnO thin film on the SS substrate. The fabricated device showed stable unipolar and bipolar resistive switching behaviors with reliable switching responses over 100 cycles. The device performance was not degraded upon bending, which indicates high potential for flexible ReRAM applications.

  4. Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device.

    PubMed

    Liang, Lin; Li, Kun; Xiao, Chong; Fan, Shaojuan; Liu, Jiao; Zhang, Wenshuai; Xu, Wenhui; Tong, Wei; Liao, Jiaying; Zhou, Yingying; Ye, Bangjiao; Xie, Yi

    2015-03-01

    On the road of innovation in modern information technology, resistive switching random access memory (RRAM) has been considered to be the best potential candidate to replace the conventional Si-based technologies. In fact, the key prerequisite of high storage density and low power consumption as well as flexibility for the tangible next generation of nonvolatile memories has stimulated extensive research into RRAM. Herein, we highlight an inorganic graphene analogue, ultrathin WO3·H2O nanosheets with only 2-3 nm thickness, as a promising material to construct a high performance and flexible RRAM device. The abundant vacancy associates in the ultrathin nanosheets, revealed by the positron annihilation spectra, act not only carrier reservoir to provide carriers but also capture center to trap the actived Cu(2+) for the formation of conductive filaments, which synergistically realize the resistive switching memory with low operating voltage (+1.0 V/-1.14 V) and large resistance ON/OFF ratio (>10(5)). This ultrathin-nanosheets-based RRAM device also shows long retention time (>10(5) s), good endurance (>5000 cycles), and excellent flexibility. The finding of the existence of distinct defects in ultrathin nanosheets undoubtedly leads to an atomic level deep understanding of the underlying nature of the resistive switching behavior, which may serve as a guide to improve the performances and promote the rapid development of RRAM. PMID:25668153

  5. PIYAS-proceeding to intelligent service oriented memory allocation for flash based data centric sensor devices in wireless sensor networks.

    PubMed

    Rizvi, Sanam Shahla; Chung, Tae-Sun

    2010-01-01

    Flash memory has become a more widespread storage medium for modern wireless devices because of its effective characteristics like non-volatility, small size, light weight, fast access speed, shock resistance, high reliability and low power consumption. Sensor nodes are highly resource constrained in terms of limited processing speed, runtime memory, persistent storage, communication bandwidth and finite energy. Therefore, for wireless sensor networks supporting sense, store, merge and send schemes, an efficient and reliable file system is highly required with consideration of sensor node constraints. In this paper, we propose a novel log structured external NAND flash memory based file system, called Proceeding to Intelligent service oriented memorY Allocation for flash based data centric Sensor devices in wireless sensor networks (PIYAS). This is the extended version of our previously proposed PIYA [1]. The main goals of the PIYAS scheme are to achieve instant mounting and reduced SRAM space by keeping memory mapping information to a very low size of and to provide high query response throughput by allocation of memory to the sensor data by network business rules. The scheme intelligently samples and stores the raw data and provides high in-network data availability by keeping the aggregate data for a longer period of time than any other scheme has done before. We propose effective garbage collection and wear-leveling schemes as well. The experimental results show that PIYAS is an optimized memory management scheme allowing high performance for wireless sensor networks. PMID:22315541

  6. Mapping virtual addresses to different physical addresses for value disambiguation for thread memory access requests

    DOEpatents

    Gala, Alan; Ohmacht, Martin

    2014-09-02

    A multiprocessor system includes nodes. Each node includes a data path that includes a core, a TLB, and a first level cache implementing disambiguation. The system also includes at least one second level cache and a main memory. For thread memory access requests, the core uses an address associated with an instruction format of the core. The first level cache uses an address format related to the size of the main memory plus an offset corresponding to hardware thread meta data. The second level cache uses a physical main memory address plus software thread meta data to store the memory access request. The second level cache accesses the main memory using the physical address with neither the offset nor the thread meta data after resolving speculation. In short, this system includes mapping of a virtual address to a different physical addresses for value disambiguation for different threads.

  7. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    NASA Astrophysics Data System (ADS)

    Cho, Ikjun; Kim, Beom Joon; Ryu, Sook Won; Cho, Jeong Ho; Cho, Jinhan

    2014-12-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-AuNPs) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-AuNP)n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i.e. PAD/TOA-AuNP)1) with a number density of 1.82 × 1012 cm-2, the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four AuNP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔVth) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 106) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.

  8. Safe patient care when using vascular access devices.

    PubMed

    Moureau, Nancy

    Any health professional providing care and treatment should first do no harm. With many serious infections affecting hospitals, patient scan be fearful. Education and competency processes specific to vascular access devices (VADs) ensure staff have knowledge of the pathophysiology of infection, basic aseptic techniques for cannulation,device management, methods of flushing, assessing device functions,and dressing and securement techniques (Coopersmith et al, 2002;Centers for Disease Control and Prevention (CDC), 2011; Infusion Nurses Society (INS), 2011; Pratt et al, 2007). However, knowledge in these areas is often taken for granted and it is assumed that health professionals are applying such knowledge in practice. Staff education is effective in reducing infection and complications (Coopersmith et al, 2002). Through teaching the Clean, Assess and Clear model, which applies to intravenous access, patient assessment and flushing catheters until clear, the basics of safe intravenous care can be consistently understood and applied, and competency assessed (Moureau, 2012).Education on the principles of aseptic technique. is a necessary for all nurses and doctors to establish a culture of safety in all healthcare settings. Establishing consistent, simple and clear health professional education on the care and maintenance of intravenous devices, in compliance with guidelines and recommendations, is necessary to achieve the best outcomes. PMID:23634458

  9. Single-crystalline CuO nanowires for resistive random access memory applications

    SciTech Connect

    Hong, Yi-Siang; Chen, Jui-Yuan; Huang, Chun-Wei; Chiu, Chung-Hua; Huang, Yu-Ting; Huang, Ting Kai; He, Ruo Shiuan; Wu, Wen-Wei

    2015-04-27

    Recently, the mechanism of resistive random access memory (RRAM) has been partly clarified and determined to be controlled by the forming and erasing of conducting filaments (CF). However, the size of the CF may restrict the application and development as devices are scaled down. In this work, we synthesized CuO nanowires (NW) (∼150 nm in diameter) to fabricate a CuO NW RRAM nanodevice that was much smaller than the filament (∼2 μm) observed in a bulk CuO RRAM device in a previous study. HRTEM indicated that the Cu{sub 2}O phase was generated after operation, which demonstrated that the filament could be minimize to as small as 3.8 nm when the device is scaled down. In addition, energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) show the resistive switching of the dielectric layer resulted from the aggregated oxygen vacancies, which also match with the I-V fitting results. Those results not only verify the switching mechanism of CuO RRAM but also show RRAM has the potential to shrink in size, which will be beneficial to the practical application of RRAM devices.

  10. Physical and chemical mechanisms in oxide-based resistance random access memory

    NASA Astrophysics Data System (ADS)

    Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Hung, Ya-Chi; Syu, Yong-En; Chang, Yao-Feng; Chen, Min-Chen; Chu, Tian-Jian; Chen, Hsin-Lu; Pan, Chih-Hung; Shih, Chih-Cheng; Zheng, Jin-Cheng; Sze, Simon M.

    2015-03-01

    In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

  11. Physical and chemical mechanisms in oxide-based resistance random access memory.

    PubMed

    Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Hung, Ya-Chi; Syu, Yong-En; Chang, Yao-Feng; Chen, Min-Chen; Chu, Tian-Jian; Chen, Hsin-Lu; Pan, Chih-Hung; Shih, Chih-Cheng; Zheng, Jin-Cheng; Sze, Simon M

    2015-01-01

    In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications. PMID:25873842

  12. Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

    NASA Astrophysics Data System (ADS)

    Jin, Zhiwen; Liu, Guo; Wang, Jizheng

    2013-05-01

    Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 104 s, cycle times of more than 100, and ON-OFF ratio of 102 to 103. The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models.

  13. Predicting fluctuations in widespread interest: memory decay and goal-related memory accessibility in internet search trends.

    PubMed

    Masicampo, E J; Ambady, Nalini

    2014-02-01

    Memory and interest respond in similar ways to people's shifting needs and motivations. We therefore tested whether memory and interest might produce similar, observable patterns in people's responses over time. Specifically, the present studies examined whether fluctuations in widespread interest (as measured by Internet search trends) resemble two well-established memory patterns: memory decay and goal-related memory accessibility. We examined national and international events (e.g., Nobel Prize selections, holidays) that produced spikes in widespread interest in certain people and foods. When the events that triggered widespread interest were incidental (e.g., the death of a celebrity), widespread interest conformed to memory decay patterns: It rose quickly, fell slowly according to a power function, and was higher after the event than before it. When the events that triggered widespread interest were goal related (e.g., political elections), widespread interest conformed to patterns of goal-related memory accessibility: It rose slowly, fell quickly according to a sigmoid function, and was lower after the event than before it. Fluctuations in widespread interest over time are thus similar to standard memory patterns observed at the individual level due perhaps to common mechanisms and functions. PMID:23127417

  14. Adult Age Differences in Accessing and Retrieving Information from Long-Term Memory.

    ERIC Educational Resources Information Center

    Petros, Thomas V.; And Others

    1983-01-01

    Investigated adult age differences in accessing and retrieving information from long-term memory. Results showed that older adults (N=26) were slower than younger adults (N=35) at feature extraction, lexical access, and accessing category information. The age deficit was proportionally greater when retrieval of category information was required.…

  15. New Approach on Logic Application of Ferroelectric Random Access Memory Technology

    NASA Astrophysics Data System (ADS)

    Takayama, Masao; Koyama, Shinzo; Nozawa, Hiroshi

    2002-11-01

    In this paper, a new approach is described to solve some problems that occur when ferroelectric random access memory (FeRAM) is applied to logic circuits, particularly RSA cryptography. Application of a programmable switch device to RSA-based cryptography processing circuits was explored. RSA-based cryptography processing circuits have been designed as code conversion circuits. The capacity of the code conversion programmable AND gate and FeRAM and the translation rate have been investigated as a function of bit length. As a result, a problem of huge capacity at the practical bit length can be predicted theoretically. To solve this problem, we propose a new scheme for circuits and a new algorithm of logic operation using the binomial theorem.

  16. 78 FR 38867 - Gastroenterology-Urology Devices; Reclassification of Implanted Blood Access Devices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-28

    ... section 513(e) proposing the reclassification of implanted blood access devices for hemodialysis (77 FR... reclassification for June 27, 2013 (78 FR 25747; May 2, 2013). The three comments submitted in response to the... discussed in the preamble to the proposed rule (46 FR 7616; January 23, 1981), the...

  17. In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.

    PubMed

    Tian, He; Zhao, Haiming; Wang, Xue-Feng; Xie, Qian-Yi; Chen, Hong-Yu; Mohammad, Mohammad Ali; Li, Cheng; Mi, Wen-Tian; Bie, Zhi; Yeh, Chao-Hui; Yang, Yi; Wong, H-S Philip; Chiu, Po-Wen; Ren, Tian-Ling

    2015-12-16

    A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density. PMID:26500160

  18. Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices

    PubMed Central

    2014-01-01

    This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiO x /Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiO x active layer via the displacement of ionic species. PMID:25298759

  19. Total ionizing dose effects and reliability of graphene-based non-volatile memory devices

    NASA Astrophysics Data System (ADS)

    Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Alles, Michael L.; Schrimpf, Ronald D.; Song, Emil B.; Galatsis, Kosmas; Newaz, A. K. M.; Bolotin, K. I.

    We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation of the performance.

  20. RAPID: A random access picture digitizer, display, and memory system

    NASA Technical Reports Server (NTRS)

    Yakimovsky, Y.; Rayfield, M.; Eskenazi, R.

    1976-01-01

    RAPID is a system capable of providing convenient digital analysis of video data in real-time. It has two modes of operation. The first allows for continuous digitization of an EIA RS-170 video signal. Each frame in the video signal is digitized and written in 1/30 of a second into RAPID's internal memory. The second mode leaves the content of the internal memory independent of the current input video. In both modes of operation the image contained in the memory is used to generate an EIA RS-170 composite video output signal representing the digitized image in the memory so that it can be displayed on a monitor.

  1. Surface potential compact model for embedded flash devices oriented to IC memory design

    NASA Astrophysics Data System (ADS)

    Garetto, Davide; Rideau, Denis; Gilibert, Fabien; Schmid, Alexandre; Jaouen, Hervé; Leblebici, Yusuf

    2013-10-01

    A surface potential-based model for embedded flash memory cells has been developed with the purpose of providing a comprehensive physical understanding of the device operation suitable for performance optimization in memory circuit design. The device equations account for charge balance effects on the isolated floating gate node and parasitic couplings between the terminals of the memory cell. The compact model supports DC, AC and transient analyses, including program/erase bias scalability, drain disturb and memory endurance degradation due to oxide aging. After validation, the model has been applied to parametric analysis and used to evaluate critical trade-offs in memory design.

  2. High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory.

    PubMed

    Banerjee, Writam; Lu, Nianduan; Li, Ling; Sun, Pengxiao; Liu, Qi; Lv, Hangbing; Long, Shibing; Liu, Ming

    2014-12-10

    The sneak path problem is one of the major hindrances for the application of high density 3D crossbar resistive random access memory (RRAM). For the selector-less RRAM devices, nonlinear (NL) current-voltage (I-V) characteristics are an alternative approach to minimize the sneak paths. In this work we have demonstrated metallic IrOx nanocrystal (IrOx-NC) based selector-less crossbar RRAM devices in an IrOx/AlOx/IrOx-NC/AlOx/W structure with very reliable hysteresis resistive switching of >10 000 cycles, stable multiple levels, and high temperature (HT) data retention. Moreover, an improvement in the NL behavior has been reported as compared to a pure high-κ AlOx RRAM. The origin of the NL nature has been discussed using the hopping model and Luittenger's 1D metal theory. The nonlinearity can be further improved by structure engineering and will improve the sensing margin of the devices, which is rewarding for crossbar array integration. PMID:25491764

  3. Control of Access to Memory: The Use of Task Interference as a Behavioral Probe

    ERIC Educational Resources Information Center

    Loft, Shayne; Humphreys, Michael S.; Whitney, Susannah J.

    2008-01-01

    Directed forgetting and prospective memory methods were combined to examine differences in the control of memory access. Between studying two lists of target words, participants were either instructed to forget the first list, or to continue remembering the first list. After study participants performed a lexical decision task with an additional…

  4. Low power switching of Si-doped Ta2O5 resistive random access memory for high density memory application

    NASA Astrophysics Data System (ADS)

    Kim, Beom Yong; Jeung Lee, Kee; Ock Chung, Su; Gil Kim, Soo; Ko, Young Seok; Kim, Hyeong Soo

    2016-04-01

    We report, for the first time, the resistive switching properties of Si-doped Ta2O5 grown by atomic layer deposition (ALD). The reduced switching current, improved on/off current ratio, and excellent endurance property are demonstrated in the Si-doped Ta2O5 resistive random access memory (ReRAM) devices of 50 nm tech node. The switching mechanism for the Si-doped Ta2O5 resistor is discussed. Si dopants enable switching layer to have conformal distribution of oxygen vacancy and easily form conductive filament. This leads to higher on/off current ratio at even low operation current of 5-10 µA. Finally, one selector-one resistor (1S1R) ReRAM was developed for large cell array application. For the optimized 1S1R stack, 0.2 µA of off current and 5.0 of on/off current ratio were successfully achieved at 10 µA of low operation current.

  5. High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

    PubMed

    Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

    2015-10-01

    Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. PMID:26153227

  6. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

    SciTech Connect

    Sun, Jun; Wu, Xing; Xu, Feng; Xu, Tao; Sun, Litao; Liu, Qi; Xie, Hongwei; Long, Shibing; Lv, Hangbing; Li, Yingtao; Liu, Ming

    2013-02-04

    In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO{sub 2}/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO{sub 2}/Pt and Cu/ZrO{sub 2}/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO{sub 2} layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10-30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO{sub 2}/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.

  7. Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures.

    PubMed

    Loke, Desmond; Shi, Luping; Wang, Weijie; Zhao, Rong; Yang, Hongxin; Ng, Lung-Tat; Lim, Kian-Guan; Chong, Tow-Chong; Yeo, Yee-Chia

    2011-06-24

    Phase-change random access memory cells with superlattice-like (SLL) GeTe/Sb(2)Te(3) were demonstrated to have excellent scaling performance in terms of switching speed and operating voltage. In this study, the correlations between the cell size, switching speed and operating voltage of the SLL cells were identified and investigated. We found that small SLL cells can achieve faster switching speed and lower operating voltage compared to the large SLL cells. Fast amorphization and crystallization of 300 ps and 1 ns were achieved in the 40 nm SLL cells, respectively, both significantly faster than those observed in the Ge(2)Sb(2)Te(5) (GST) cells of the same cell size. 40 nm SLL cells were found to switch with low amorphization voltage of 0.9 V when pulse-widths of 5 ns were employed, which is much lower than the 1.6 V required by the GST cells of the same cell size. These effects can be attributed to the fast heterogeneous crystallization, low thermal conductivity and high resistivity of the SLL structures. Nanoscale PCRAM with SLL structure promises applications in high speed and low power memory devices. PMID:21572204

  8. Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory

    NASA Astrophysics Data System (ADS)

    Kimura, K.; Ohmi, K.; Kishida, S.; Kinoshita, K.

    2016-03-01

    With increasing density of memory devices, the issue of generating soft errors by cosmic rays is becoming more and more serious. Therefore, the irradiation resistance of resistance random access memory (ReRAM) to cosmic radiation has to be elucidated for practical use. In this paper, we investigated the data retention characteristics of ReRAM against ultraviolet irradiation with a Pt/NiO/ITO structure. Soft errors were confirmed to be caused by ultraviolet irradiation in both low- and high-resistance states. An analysis of the wavelength dependence of light irradiation on data retention characteristics suggested that electronic excitation from the valence to the conduction band and to the energy level generated due to the introduction of oxygen vacancies caused the errors. Based on a statistically estimated soft error rates, the errors were suggested to be caused by the cohesion and dispersion of oxygen vacancies owing to the generation of electron-hole pairs and valence changes by the ultraviolet irradiation.

  9. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    PubMed Central

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal–amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier–lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13–0.6 MA cm−2) compared with the melt-quench strategy (∼50 MA cm−2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

  10. Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices

    NASA Astrophysics Data System (ADS)

    Zhou, Jiao; Ji, Hongkai; Lan, Tian; Yan, Junbing; Zhou, Wenli; Miao, Xiangshui

    2015-01-01

    Phase change random access memory (PCRAM) affords many advantages over conventional solid-state memories due to its nonvolatility, high speed, and scalability. However, high programming current to amorphize the crystalline phase through the melt-quench process of PCRAM, known as the RESET current, poses a critical challenge and has become the most significant obstacle for its widespread commercialization. In this work, an excellent negative tone resist for high resolution electron beam lithography, hydrogen silsesquioxane (HSQ), has been investigated as the insulating material which locally blocks the contact between the bottom electrode and the phase change material in PCRAM devices. Fabrications of the highly scaled HSQ nanopore arrays (as small as 16 nm) are presented. The insulating properties of the HSQ material are studied, especially under e-beam exposure plus thermal curing. Some other critical issues about the thickness adjustment of HSQ films and the influence of the PCRAM electrode on electron scattering in e-beam lithography are discussed. In addition, the HSQ material was successfully integrated into the PCRAM devices, achieving ultra-low RESET current (sub-100 μA), outstanding on/off ratios (~50), and improved endurance at tens of nanometers.

  11. Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices

    NASA Astrophysics Data System (ADS)

    Zhou, Jiao; Ji, Hongkai; Lan, Tian; Yan, Junbing; Zhou, Wenli; Miao, Xiangshui

    2014-09-01

    Phase change random access memory (PCRAM) affords many advantages over conventional solid-state memories due to its nonvolatility, high speed, and scalability. However, high programming current to amorphize the crystalline phase through the melt-quench process of PCRAM, known as the RESET current, poses a critical challenge and has become the most significant obstacle for its widespread commercialization. In this work, an excellent negative tone resist for high resolution electron beam lithography, hydrogen silsesquioxane (HSQ), has been investigated as the insulating material which locally blocks the contact between the bottom electrode and the phase change material in PCRAM devices. Fabrications of the highly scaled HSQ nanopore arrays (as small as 16 nm) are presented. The insulating properties of the HSQ material are studied, especially under e-beam exposure plus thermal curing. Some other critical issues about the thickness adjustment of HSQ films and the influence of the PCRAM electrode on electron scattering in e-beam lithography are discussed. In addition, the HSQ material was successfully integrated into the PCRAM devices, achieving ultra-low RESET current (sub-100 μA), outstanding on/off ratios (~50), and improved endurance at tens of nanometers.

  12. Novel device structure for phase change memory toward low-current operation

    NASA Astrophysics Data System (ADS)

    Kim, Eunha; Kang, Nam Soo; Yang, Hyung-Jun; Sutou, Yuji; Song, Yun-Heub

    2015-09-01

    We present a novel device architecture for low set and reset currents in phase change random access memory (PCRAM). In this structure, the sidewall of phase-change film is contacted with the vertical heating layer. In particular, to realize a small contact area of under 50 nm2 for low reset current, this structure includes stacked layers consisting of extremely thin phase change material (PCM) and conduction films, the fabrication method of which is proposed. We estimated set and reset currents for the proposed structure by the device simulation method. Here, we confirmed that a contact area of 30 nm2 in this structure, where Ge2Sb2Te5 is used as PCM, provides a reset current of 13.5 µA and a set current of 4 µA, which are promising for the scaling down of PCM. Furthermore, it is confirmed that the thinner PCM in this structure provides less thermal disturbance to the neighboring cell. From the results, we expect this structure to be a promising candidate for a high-density nonvolatile memory architecture with PCM.

  13. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices.

    PubMed

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm(-2)) compared with the melt-quench strategy (∼50 MA cm(-2)). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation. PMID:26805748

  14. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

    NASA Astrophysics Data System (ADS)

    Nukala, Pavan; Lin, Chia-Chun; Composto, Russell; Agarwal, Ritesh

    2016-01-01

    Crystal-amorphous transformation achieved via the melt-quench pathway in phase-change memory involves fundamentally inefficient energy conversion events; and this translates to large switching current densities, responsible for chemical segregation and device degradation. Alternatively, introducing defects in the crystalline phase can engineer carrier localization effects enhancing carrier-lattice coupling; and this can efficiently extract work required to introduce bond distortions necessary for amorphization from input electrical energy. Here, by pre-inducing extended defects and thus carrier localization effects in crystalline GeTe via high-energy ion irradiation, we show tremendous improvement in amorphization current densities (0.13-0.6 MA cm-2) compared with the melt-quench strategy (~50 MA cm-2). We show scaling behaviour and good reversibility on these devices, and explore several intermediate resistance states that are accessible during both amorphization and recrystallization pathways. Existence of multiple resistance states, along with ultralow-power switching and scaling capabilities, makes this approach promising in context of low-power memory and neuromorphic computation.

  15. Investigation of three-terminal organic-based devices with memory effect and negative differential resistance

    NASA Astrophysics Data System (ADS)

    Yu, Li-Zhen; Lee, Ching-Ting

    2009-09-01

    The current-voltage characteristics of the gate-controlled three-terminal organic-based devices with memory effect and negative differential resistances (NDR) were studied. Gold and 9,10-di(2-naphthyl)anthracene (ADN) were used as the metal electrode and active channel layer of the devices, respectively. By using various gate-source voltages, the memory and NDR characteristics of the devices can be modulated. The memory and NDR characteristics of the devices were attributed to the formation of trapping sites in the interface between Au electrode and ADN active layer caused by the defects, when Au metal deposited on the ADN active layer.

  16. Mult-I/O - a middleware multi input and output for access devices: a case study applied the biomedical devices.

    PubMed

    Lacerda, João M T; Bezerra, Heitor U; Valentim, Ricardo A M; Guerreiro, Ana M G; Brandão, Glaucio B; Ribeiro, Anna G D; Soares, Heliana B; Araújo, Bruno G; Leite, Cicilia R M

    2010-01-01

    The great diversity in the architecture of hardware devices allied to many communication protocols, has been hindering the implementation of systems that need to access these devices. Given these differences, it appears the need of providing the access of these devices in a transparent way. In this sense, the present work proposes a middleware, mult input and output for access the devices, as a way of abstracting the writing and reading data mechanisms in hardware devices, contributing this way, for increasing systems productivity, as the developers are just focused in their functional requirements. PMID:21097073

  17. Percutaneous Endovascular Salvage Techniques for Implanted Venous Access Device Dysfunction

    SciTech Connect

    Breault, Stéphane; Glauser, Frédéric; Babaker, Malik Doenz, Francesco Qanadli, Salah Dine

    2015-06-15

    PurposeImplanted venous access devices (IVADs) are often used in patients who require long-term intravenous drug administration. The most common causes of device dysfunction include occlusion by fibrin sheath and/or catheter adherence to the vessel wall. We present percutaneous endovascular salvage techniques to restore function in occluded catheters. The aim of this study was to evaluate the feasibility, safety, and efficacy of these techniques.Methods and MaterialsThrough a femoral or brachial venous access, a snare is used to remove fibrin sheath around the IVAD catheter tip. If device dysfunction is caused by catheter adherences to the vessel wall, a new “mechanical adhesiolysis” maneuver was performed. IVAD salvage procedures performed between 2005 and 2013 were analyzed. Data included clinical background, catheter tip position, success rate, recurrence, and rate of complication.ResultsEighty-eight salvage procedures were performed in 80 patients, mostly women (52.5 %), with a mean age of 54 years. Only a minority (17.5 %) of evaluated catheters were located at an optimal position (i.e., cavoatrial junction ±1 cm). Mechanical adhesiolysis or other additional maneuvers were used in 21 cases (24 %). Overall technical success rate was 93.2 %. Malposition and/or vessel wall adherences were the main cause of technical failure. No complications were noted.ConclusionThese IVAD salvage techniques are safe and efficient. When a catheter is adherent to the vessel wall, mechanical adhesiolysis maneuvers allow catheter mobilization and a greater success rate with no additional risk. In patients who still require long-term use of their IVAD, these procedures can be performed safely to avoid catheter replacement.

  18. Oxide Defect Engineering Methods for Valence Change (VCM) Resistive Random Access Memories

    NASA Astrophysics Data System (ADS)

    Capulong, Jihan O.

    Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy concentration and oxygen vacancy defects. Oxygen vacancy defects in the switching oxide of valence-change-based ReRAM (VCM ReRAM) play a significant role in device switching properties. Oxygen vacancies facilitate resistive switching as they form the conductive filament that changes the resistance state of the device. This dissertation will present two methods of modulating the defect concentration in VCM ReRAM composed of Pt/HfOx/Ti stack: 1) rapid thermal annealing (RTA) in Ar using different temperatures, and 2) doping using ion implantation under different dose levels. Metrology techniques such as x-ray diffractometry (XRD), x-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy were utilized to characterize the HfOx switching oxide, which provided insight on the material properties and oxygen vacancy concentration in the oxide that was used to explain the changes in the electrical properties of the ReRAM devices. The resulting impact on the resistive switching characteristics of the devices, such as the forming voltage, set and reset threshold voltages, ON and OFF resistances, resistance ratio, and switching dispersion or uniformity were explored and summarized. Annealing in Ar showed significant impact on the forming voltage, with as much as 45% (from 22V to 12 V) of improvement, as the annealing temperature was increased. However, drawbacks of a higher oxide leakage and worse switching uniformity were seen with increasing annealing temperature. Meanwhile, doping the oxide by ion implantation showed significant effects on the resistive switching characteristics. Ta doping modulated the following switching properties with increasing dose: a) the reduction of the forming voltage, and Vset

  19. The structured memory access architecture: An implementation and performance-evaluation

    SciTech Connect

    Cyr, J.B.

    1986-08-01

    The Structured Memory Access (SMS) architecture implementation presented in this thesis is formulated with the intention of alleviating two well-known inefficiencies that exist in current scalar computer architectures: address generation overhead and memory bandwidth utilization. Furthermore, the SMA architecture introduces an additional level of parallelism which is not present in current pipelined supercomputers, namely, overlapped execution of the access process and execute process on two distinct special-purpose, asynchronously-coupled processors. Each processor executes a separate instruction stream to perform its specific task which, together, are functionally equivalent in a conventional program. Our simulation results show that, for typical numerical programs, the access processor (MAP) is capable of achieving slip, i.e., running sufficiently ahead of the execute processor (CP) so that operand fetch requests for data items required by the CP are issued early enough and rapidly enough for the CP rarely to experience any memory access wait time. In this manner the SMA tolerates long memory access time, albeit high bandwidth, paths to memory without sacrificing performance. Speedups relative to the Cray-1 in scalar mode often exceed two, due to dual processing and reductions in memory wait time. 17 refs., 11 figs., 3 tabs.

  20. Integration of lead zirconium titanate thin films for high density ferroelectric random access memory

    NASA Astrophysics Data System (ADS)

    Kim, Kinam; Lee, Sungyung

    2006-09-01

    Interests are being focused on types of nonvolatile memories such as ferroelectric random access memory (FRAM), phase change random access memory, or magnetoresistance random access memory due to their distinct memory properties such as excellent write performance which conventional nonvolatile memories do not possess. Among these types of nonvolatile memories, FRAM whose cell structure and operation are almost identical to dynamic random access memory (DRAM) can ideally realize cell size and speed of DRAM. Thus FRAM is the most appropriate candidate for future universal memory where all memory functions are performed with a single chip solution. Due to the poor ferroelectric properties of downscaled ultrathin lead zirconium titanate (PZT) capacitors as well as technical issues such as hydrogen and plasma related degradation arising from embedding ferroelectric metal-insulator-metal capacitors into conventional complementary metal oxide semiconductor processes, current FRAM still falls far below its ideally attainable cell size and performance. In this paper, based upon PZT capacitor, current mass-productive one pass transistor and one storage capacitor (1T1C), capacitor over bit line (COB) cell technologies are introduced upon which cell size of 0.937μm2 at 250nm minimum feature size technology node has been realized. And then, most recent 1T1C, COB cell technologies are discussed from which cell size of 0.27μm2 at 150nm minimum feature size technology node has been realized, and finally future three dimensional capacitor technologies for the FRAM with cell size of less than 0.08μm2 beyond 100nm minimum feature size technology node are suggested.

  1. SHADE: A Shape-Memory-Activated Device Promoting Ankle Dorsiflexion

    NASA Astrophysics Data System (ADS)

    Pittaccio, S.; Viscuso, S.; Rossini, M.; Magoni, L.; Pirovano, S.; Villa, E.; Besseghini, S.; Molteni, F.

    2009-08-01

    Acute post-stroke rehabilitation protocols include passive mobilization as a means to prevent contractures. A device (SHADE) that provides repetitive passive motion to a flaccid ankle by using shape memory alloy actuators could be of great help in providing this treatment. A suitable actuator was designed as a cartridge of approximately 150 × 20 × 15 mm, containing 2.5 m of 0.25 mm diameter NiTi wire. This actuator was activated by Joule’s effect employing a 7 s current input at 0.7 A, which provided 10 N through 76 mm displacement. Cooling and reset by natural convection took 30 s. A prototype of SHADE was assembled with two thermoplastic shells hinged together at the ankle and strapped on the shin and foot. Two actuators were fixed on the upper shell while an inextensible thread connected each NiTi wire to the foot shell. The passive ankle motion (passive range of motion, PROM) generated by SHADE was evaluated optoelectronically on three flaccid patients (58 ± 5 years old); acceptability was assessed by a questionnaire presented to further three flaccid patients (44 ± 11.5 years old) who used SHADE for 5 days, 30 min a day. SHADE was well accepted by all patients, produced good PROM, and caused no pain. The results prove that suitable limb mobilization can be produced by SMA actuators.

  2. Quantum Conductance in Silicon Oxide Resistive Memory Devices

    PubMed Central

    Mehonic, A.; Vrajitoarea, A.; Cueff, S.; Hudziak, S.; Howe, H.; Labbé, C.; Rizk, R.; Pepper, M.; Kenyon, A. J.

    2013-01-01

    Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of the fundamental unit of conductance, G0. Such quantum effects appear when the constriction diameter approaches the Fermi wavelength of the electron in the medium – typically several nanometres. Here we find that the conductance of silicon-rich silica (SiOx) resistive switches is quantised in half-integer multiples of G0. In contrast to other resistive switching systems this quantisation is intrinsic to SiOx, and is not due to drift of metallic ions. Half-integer quantisation is explained in terms of the filament structure and formation mechanism, which allows us to distinguish between systems that exhibit integer and half-integer quantisation. PMID:24048282

  3. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 1

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    Electrical characterization and qualification tests were performed on the RCA MWS5001D, 1024 by 1-bit, CMOS, random access memory. Characterization tests were performed on five devices. The tests included functional tests, AC parametric worst case pattern selection test, determination of worst-case transition for setup and hold times and a series of schmoo plots. The qualification tests were performed on 32 devices and included a 2000 hour burn in with electrical tests performed at 0 hours and after 168, 1000, and 2000 hours of burn in. The tests performed included functional tests and AC and DC parametric tests. All of the tests in the characterization phase, with the exception of the worst-case transition test, were performed at ambient temperatures of 25, -55 and 125 C. The worst-case transition test was performed at 25 C. The preburn in electrical tests were performed at 25, -55, and 125 C. All burn in endpoint tests were performed at 25, -40, -55, 85, and 125 C.

  4. Three-terminal resistive switching memory in a transparent vertical-configuration device

    SciTech Connect

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-06

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

  5. Effects of different dopants on switching behavior of HfO2-based resistive random access memory

    NASA Astrophysics Data System (ADS)

    Deng, Ning; Pang, Hua; Wu, Wei

    2014-10-01

    In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.

  6. The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories.

    PubMed

    Souchier, E; D'Acapito, F; Noé, P; Blaise, P; Bernard, M; Jousseaume, V

    2015-10-01

    Conductive bridging random access memories (CBRAMs) are one of the most promising emerging technologies for the next generation of non-volatile memory. However, the lack of understanding of the switching mechanism at the nanoscale level prevents successful transfer to industry. In this paper, Ag/GeSx/W CBRAM devices are analyzed using depth selective X-ray Absorption Spectroscopy before and after switching. The study of the local environment around Ag atoms in such devices reveals that Ag is in two very distinct environments with short Ag-S bonds due to Ag dissolved in the GeSx matrix, and longer Ag-Ag bonds related to an Ag metallic phase. These experiments allow the conclusion that the switching process involves the formation of metallic Ag nano-filaments initiated at the Ag electrode. All these experimental features are well supported by ab initio molecular dynamics simulations showing that Ag favorably bonds to S atoms, and permit the proposal of a model at the microscopic level that can explain the instability of the conductive state in these Ag-GeSx CBRAM devices. Finally, the principle of the nondestructive method described here can be extended to other types of resistive memory concepts. PMID:26312954

  7. Copper sulfide solid-state electrolytic memory devices

    NASA Astrophysics Data System (ADS)

    You, Liang

    Copper sulfide thin films with electrical switching and memory effect were grown using a chemical vapor reaction apparatus. The formation of copper sulfide film undergoes a process which includes nucleation, growth of nucleation, coalescence into continuous film, and film thickening. The initial phase of the sulfide growth was reaction limited followed by a diffusion limited phase involving out-diffusion of copper. The thin film tends to nucleate and grow at energy favorable sites such as twinning boundary. Sulfidation of polycrystalline copper results in formation of voids at the interface between the copper and its sulfide. (111) copper has the highest sulfidation rate followed by (100) and (110) copper planes. Moreover, the sulfidation rate near the microfabricated plug edge was found to be faster than the rate at the center of the plug. A mechanism based on competing sulfidation sites due to the geometry difference between the plugs' center and their edge is presented to explain this phenomenon. We show for the first time that field-assisted solid-electrolyte copper sulfide thin film device can function as a switch by reversing the voltage polarity between copper and inert metal electrodes through a copper-sulfide layer in planar and vertical structures. The copper oxide at the top of copper sulfide greatly increased the turn-on voltage. The turn-on voltage depends linearly on the film thickness. Copper sulfide devices in micrometer dimension were microfabricated using IC compatible techniques and characterized showing the same switching effect. Electrode contact area effect on switching performance was investigated in term of turn-on voltage, turn-off voltage, on-state resistance and off-state resistance. Four-point resistance measurement unit, Hall Effect and transfer length measurement were also fabricated together with copper sulfide switching devices and they were studied in order to determine the CuxS carrier type, carrier concentration, film resistivity

  8. High speed magneto-resistive random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1992-01-01

    A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

  9. Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement

    NASA Astrophysics Data System (ADS)

    Kim, Hyungjin; Lee, Jong-Ho; Park, Byung-Gook

    2016-08-01

    One of the major concerns of one-transistor dynamic random access memory (1T-DRAM) is poor retention time. In this letter, a 1T-DRAM cell with two separated asymmetric gates was fabricated and evaluated to improve sensing margin and retention characteristics. It was observed that significantly enhanced sensing margin and retention time over 1 s were obtained using a negatively biased second gate and trapped electrons in the nitride layer because of increased hole capacity in the floating body. These findings indicate that the proposed device could serve as a promising candidate for overcoming retention issues of 1T-DRAM cells.

  10. Configurable memory system and method for providing atomic counting operations in a memory device

    DOEpatents

    Bellofatto, Ralph E.; Gara, Alan G.; Giampapa, Mark E.; Ohmacht, Martin

    2010-09-14

    A memory system and method for providing atomic memory-based counter operations to operating systems and applications that make most efficient use of counter-backing memory and virtual and physical address space, while simplifying operating system memory management, and enabling the counter-backing memory to be used for purposes other than counter-backing storage when desired. The encoding and address decoding enabled by the invention provides all this functionality through a combination of software and hardware.

  11. Pyoderma gangrenosum after totally implanted central venous access device insertion

    PubMed Central

    Inan, Ihsan; Myers, Patrick O; Braun, Rolf; Hagen, Monica E; Morel, Philippe

    2008-01-01

    Background Pyoderma gangrenosum is an aseptic skin disease. The ulcerative form of pyoderma gangrenosum is characterized by a rapidly progressing painful irregular and undermined bordered necrotic ulcer. The aetiology of pyoderma gangrenosum remains unclear. In about 70% of cases, it is associated with a systemic disorder, most often inflammatory bowel disease, haematological disease or arthritis. In 25–50% of cases, a triggering factor such as recent surgery or trauma is identified. Treatment consists of local and systemic approaches. Systemic steroids are generally used first. If the lesions are refractory, steroids are combined with other immunosuppressive therapy or to antimicrobial agents. Case presentation A 90 years old patient with myelodysplastic syndrome, seeking regular transfusions required totally implanted central venous access device (Port-a-Cath®) insertion. Fever and inflammatory skin reaction at the site of insertion developed on the seventh post-operative day, requiring the device's explanation. A rapid progression of the skin lesions evolved into a circular skin necrosis. Intravenous steroid treatment stopped the necrosis' progression. Conclusion Early diagnosis remains the most important step to the successful treatment of pyoderma gangrenosum. PMID:18325095

  12. Integration of Flexible and Microscale Organic Nonvolatile Resistive Memory Devices Using Orthogonal Photolithography.

    PubMed

    Song, Younggul; Jang, Jingon; Yoo, Daekyoung; Jung, Seok-Heon; Jeong, Hyunhak; Hong, Seunghun; Lee, Jin-Kyun; Lee, Takhee

    2016-06-01

    We present the integration of flexible and microscale organic nonvolatile resistive memory devices fabricated in a cross-bar array structure on plastic substrates. This microscale integration was made via orthogonal photolithography method using fluorinated photoresist and solvents and was achieved without causing damage to the underlying organic memory materials. Our flexible microscale organic devices exhibited high ON/OFF ratio (I(ON/I(OFF) > 10(4)) under bending conditions. In addition, the ON and OFF states of our flexible and microscale memory devices were maintained for 10,000 seconds without any serious degradation. PMID:27427716

  13. Asymmetrical access to color and location in visual working memory.

    PubMed

    Rajsic, Jason; Wilson, Daryl E

    2014-10-01

    Models of visual working memory (VWM) have benefitted greatly from the use of the delayed-matching paradigm. However, in this task, the ability to recall a probed feature is confounded with the ability to maintain the proper binding between the feature that is to be reported and the feature (typically location) that is used to cue a particular item for report. Given that location is typically used as a cue-feature, we used the delayed-estimation paradigm to compare memory for location to memory for color, rotating which feature was used as a cue and which was reported. Our results revealed several novel findings: 1) the likelihood of reporting a probed object's feature was superior when reporting location with a color cue than when reporting color with a location cue; 2) location report errors were composed entirely of swap errors, with little to no random location reports; and 3) both colour and location reports greatly benefitted from the presence of nonprobed items at test. This last finding suggests that it is uncertainty over the bindings between locations and colors at memory retrieval that drive swap errors, not at encoding. We interpret our findings as consistent with a representational architecture that nests remembered object features within remembered locations. PMID:25190322

  14. Metal-organic molecular device for non-volatile memory storage

    SciTech Connect

    Radha, B. E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U. E-mail: kulkarni@jncasr.ac.in

    2014-08-25

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  15. Metal-organic molecular device for non-volatile memory storage

    NASA Astrophysics Data System (ADS)

    Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

    2014-08-01

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  16. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

    PubMed

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-12-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges. PMID:27541816

  17. A fast and low-power microelectromechanical system-based non-volatile memory device

    PubMed Central

    Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

    2011-01-01

    Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

  18. A fast and low-power microelectromechanical system-based non-volatile memory device.

    PubMed

    Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E B; Park, Yung Woo

    2011-01-01

    Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

  19. Towards the development of flexible non-volatile memories.

    PubMed

    Han, Su-Ting; Zhou, Ye; Roy, V A L

    2013-10-11

    Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories. PMID:24038631

  20. Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

    NASA Astrophysics Data System (ADS)

    Moon, Kibong; Park, Sangsu; Jang, Junwoo; Lee, Daeseok; Woo, Jiyong; Cha, Euijun; Lee, Sangheon; Park, Jaesung; Song, Jeonghwan; Koo, Yunmo; Hwang, Hyunsang

    2014-12-01

    We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under an electrical pulse to mimic biological spike-timing-dependent plasticity synapse characteristics. As a synaptic device, a TiN/Pr0.7Ca0.3MnO3-based resistive-switching device exhibiting excellent analogue memory characteristics was used to control the synaptic weight by applying various pulse amplitudes and cycles. Furthermore, potentiation and depression characteristics with the same spikes can be achieved by applying negative and positive pulses, respectively. By adopting complementary metal-oxide-semiconductor devices as neurons and TiN/PCMO devices as synapses, we implemented neuromorphic hardware that mimics associative memory characteristics in real time for the first time. Owing to their excellent scalability, resistive-switching devices, shows promise for future high-density neuromorphic applications.

  1. Open coil structure for bubble-memory-device packaging

    NASA Technical Reports Server (NTRS)

    Chen, T. T.; Ypma, J. E.

    1975-01-01

    Concept has several important advantages over close-wound system: memory and coil chips are separate and interchangeable; interconnections in coil level are eliminated by packing memory chip and electronics in single structure; and coil size can be adjusted to optimum value in terms of power dissipation and field uniformity.

  2. Memory Hooks and Other Mnemonic Devices: A Brief Overview for Language Teachers.

    ERIC Educational Resources Information Center

    Nyikos, Martha

    A mnemonic device is any technique or system to improve or aid the memory by use of formulas. Memory aids enjoyed great popularity in ancient times, but with the advent of literacy, the need for memorization was lessened and mnemonics were not taught regularly. However, recent research in cognitive psychology suggests that mnemonics, taught and…

  3. Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: gold nanoparticles.

    PubMed

    Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2013-12-26

    We report the facile fabrication and characteristics of organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium. Electrical bias sweep/excitation effectively modulates the current response of hybrid memory devices through the charge transfer between F8T2 channel and functionalized Au NPs trapping sites. The electrical performance of the hybrid memory devices can be effectively controlled though the loading concentrations (0-9 %) of Au NPs and organic thiolate ligands on Au NP surfaces with different carbon chain lengths (Au-L6, Au-L10, and Au-L18). The memory window induced by voltage sweep is considerably increased by the high content of Au NPs or short carbon chain on the ligand. The hybrid nanocomposite of F8T2:9% Au-L6 provides the OTFT memories with a memory window of ~41 V operated at ± 30 V and memory ratio of ~1 × 10(3) maintained for 1 × 10(4) s. The experimental results suggest that the hybrid materials of the functionalized Au NPs in F8T2 matrix have the potential applications for low voltage-driven high performance nonvolatile memory devices. PMID:24224739

  4. Use of Mobile Devices to Access Resources Among Health Professions Students: A Systematic Review.

    PubMed

    Mi, Misa; Wu, Wendy; Qiu, Maylene; Zhang, Yingting; Wu, Lin; Li, Jie

    2016-01-01

    This systematic review examines types of mobile devices used by health professions students, kinds of resources and tools accessed via mobile devices, and reasons for using the devices to access the resources and tools. The review included 20 studies selected from articles published in English between January 2010 and April 2015, retrieved from PubMed and other sources. Data extracted included participants, study designs, mobile devices used, mobile resources/apps accessed, outcome measures, and advantages of and barriers to using mobile devices. The review indicates significant variability across the studies in terms of research methods, types of mobile programs implemented, resources accessed, and outcomes. There were beneficial effects of using mobile devices to access resources as well as conspicuous challenges or barriers in using mobile devices. PMID:26794197

  5. Design of a Molecular Memory Device: The Electron Transfer Shift Register Memory

    NASA Technical Reports Server (NTRS)

    Beratan, D.

    1993-01-01

    A molecular shift register memory at the molecular level is described. The memory elements consist of molecules can exit in either an oxidized or reduced state and the bits are shifted between the cells with photoinduced electron transfer reactions.

  6. Towards formation of fibrous woven memory devices from all-carbon electronic fibers.

    PubMed

    Li, Ru; Sun, Rui; Sun, Yanyan; Gao, Peng; Zhang, Yongyi; Zeng, Zhongming; Li, Qingwen

    2015-03-21

    Fibrous all-carbon woven memory devices have been formed by using reduced acid graphene oxide as a switching material, and flexible carbon nanotube fibers as electrodes. The as prepared fibrous all-carbon woven memory devices exhibited an ultra-high ON/OFF current ratio of 10(9), a fast switching speed of 3 ms, and a long life time of at least 500 cycles that could pave the way for future e-textiles. PMID:25705030

  7. Optical interconnection network for parallel access to multi-rank memory in future computing systems.

    PubMed

    Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

    2015-08-10

    With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent. PMID:26367901

  8. New Specimen Access Device for the Large Space Simulator

    NASA Astrophysics Data System (ADS)

    Lazzarini, P.; Ratti, F.

    2004-08-01

    The Large Space Simulator (LSS) is used to simulate in- orbit environmental conditions for spacecraft (S/C) testing. The LSS is intended to be a flexible facility: it can accommodate test articles that can differ significantly in shape and weight and carry various instruments. To improve the accessibility to the S/C inside the LSS chamber a new Specimen Access Device (SAD) has been procured. The SAD provides immediate and easy access to the S/C, thus reducing the amount of time necessary for the installations of set-ups in the LSS. The SAD has been designed as bridge crane carrying a basket to move the operator into the LSS. Such a crane moves on parallel rails on the top floor of the LSS building. The SAD is composed by three subsystems: the main bridge, the trolley that moves along the main bridge and the telescopic mast. A trade off analysis has been carried out for what concerns the telescopic mast design. The choice between friction pads vs rollers, to couple the different sections of the mast, has been evaluated. The resulting design makes use of a four sections square mast, with rollers driven deployment. This design has been chosen for the higher stiffness of the mast, due to the limited number of sections, and because it reduces radically the risk of contamination related to a solution based on sliding bushings. Analyses have been performed to assess the mechanical behaviour both in static and in dynamic conditions. In particular the telescopic mast has been studied in detail to optimise its stiffness and to check the safety margins in the various operational conditions. To increase the safety of the operations an anticollision system has been implemented by positioning on the basket two kind of sensors, ultrasonic and contact ones. All the translations are regulated by inverters with acceleration and deceleration ramps controlled by a Programmable Logic Controller (PLC). An absolute encoder is installed on each motor to provide the actual position of the

  9. Non-volatile memory devices with redox-active diruthenium molecular compound.

    PubMed

    Pookpanratana, S; Zhu, H; Bittle, E G; Natoli, S N; Ren, T; Richter, C A; Li, Q; Hacker, C A

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a 'click' reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The 'click' reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. PMID:26871549

  10. Non-volatile memory devices with redox-active diruthenium molecular compound

    NASA Astrophysics Data System (ADS)

    Pookpanratana, S.; Zhu, H.; Bittle, E. G.; Natoli, S. N.; Ren, T.; Richter, C. A.; Li, Q.; Hacker, C. A.

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

  11. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    NASA Astrophysics Data System (ADS)

    Thomas, Luc; Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-01

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  12. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    SciTech Connect

    Thomas, Luc Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-07

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 k{sub B}T/μA, energy barriers higher than 100 k{sub B}T at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  13. Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2007-01-01

    Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

  14. Symmetric Data Objects and Remote Memory Access Communication for Fortran 95-Applications.

    SciTech Connect

    Nieplocha, Jarek; Baxter, Douglas J.; Tipparaju, Vinod; Rasmussen, Craig; Numrich, Robert W.

    2005-08-01

    Symmetric data objects have been introduced by Cray Inc. in context of SHMEM remote memory access communication on Cray T3D/E systems and later adopted by SGI for their Origin servers. Symmetric data objects greatly simplify parallel programming by allowing to reference remote instance of a data structure by specifying address of the local counterpart. The current paper describes how symmetric data objects and remote memory access communication could be implemented in Fortran-95 without requiring specialized hardware or compiler support. NAS Multi-Grid parallel benchmark was used as an application example and demonstrated competitive performance to the standard MPI implementation

  15. Insertion of Totally Implantable Central Venous Access Devices by Surgeons

    PubMed Central

    An, Hyeonjun; Ryu, Chun-Geun; Jung, Eun-Joo; Kang, Hyun Jong; Paik, Jin Hee; Yang, Jung-Hyun

    2015-01-01

    Purpose The aim of this study is to evaluate the results for the insertion of totally implantable central venous access devices (TICVADs) by surgeons. Methods Total 397 patients, in whom TICVADs had been inserted for intravenous chemotherapy between September 2008 and June 2014, were pooled. This procedure was performed under local anesthesia in an operation room. The insertion site for the TICVAD was mainly in the right-side subclavian vein. In the case of breast cancer patients, the subclavian vein opposite the surgical site was used for insertion. Results The 397 patients included 73 males and 324 females. Primary malignant tumors were mainly colorectal and breast cancer. The mean operation time was 54 minutes (18-276 minutes). Operation-related complications occurred in 33 cases (8.3%). Early complications developed in 15 cases with catheter malposition and puncture failure. Late complications, which developed after 24 hours, included inflammation in 6 cases, skin necrosis in 6 cases, hematoma in 3 cases, port malfunction in 1 case, port migration in 1 case, and intractable pain at the port site in 1 case. Conclusion Insertion of a TICVAD under local anesthesia by a surgeon is a relatively safe procedure. Meticulous undermining of the skin and carefully managing the TICVAD could minimize complications. PMID:25960974

  16. A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances.

    PubMed

    Hong, Eugene Yau-Hin; Poon, Chun-Ting; Yam, Vivian Wing-Wah

    2016-05-25

    A novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10(3)/10(7), and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds. PMID:27163338

  17. Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

    NASA Astrophysics Data System (ADS)

    Jiang, Hao; Stewart, Derek A.

    2016-04-01

    Metal oxide resistive memory devices based on Ta2O5 have demonstrated high switching speed, long endurance, and low set voltage. However, the physical origin of this improved performance is still unclear. Ta2O5 is an important archetype of a class of materials that possess an adaptive crystal structure that can respond easily to the presence of defects. Using first principles nudged elastic band calculations, we show that this adaptive crystal structure leads to low energy barriers for in-plane diffusion of oxygen vacancies in λ phase Ta2O5. Identified diffusion paths are associated with collective motion of neighboring atoms. The overall vacancy diffusion is anisotropic with higher diffusion barriers found for oxygen vacancy movement between Ta-O planes. Coupled with the fact that oxygen vacancy formation energy in Ta2O5 is relatively small, our calculated low diffusion barriers can help explain the low set voltage in Ta2O5 based resistive memory devices. Our work shows that other oxides with adaptive crystal structures could serve as potential candidates for resistive random access memory devices. We also discuss some general characteristics for ideal resistive RAM oxides that could be used in future computational material searches.

  18. High performance nonvolatile memory devices based on Cu2-xSe nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

    2013-11-01

    We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

  19. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    SciTech Connect

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  20. Knowledge Accessibility, Achievement Goals, and Memory Strategy Maintenance

    ERIC Educational Resources Information Center

    Escribe, Christian; Huet, Nathalie

    2005-01-01

    Background: An important aim of educational psychology is to account for the difficulties in cognitive strategy maintenance. Possible explanations may be found in developmental studies concerning the interdependence of knowledge accessibility and strategy use, and in current achievement goal models which assume that individuals with a learning…

  1. Switching methods in magnetic random access memory for low power applications

    NASA Astrophysics Data System (ADS)

    Guchang, Han; Jiancheng, Huang; Cheow Hin, Sim; Tran, Michael; Sze Ter, Lim

    2015-06-01

    Effect of saturation magnetization (Ms) of the free layer (FL) on the switching current is analyzed for spin transfer torque (STT) magnetic random access memory (MRAM). For in-plane FL, critical switching current (Ic0) decreases as Ms decreases. However, reduction in Ms also results in a low thermal stability factor (Δ), which must be compensated through increasing shape anisotropy, thus limiting scalability. For perpendicular FL, Ic0 reduction by using low-Ms materials is actually at the expense of data retention. To save energy consumed by STT current, two electric field (EF) controlled switching methods are proposed. Our simulation results show that elliptical FL can be switched by an EF pulse with a suitable width. However, it is difficult to implement this type of switching in real MRAM devices due to the distribution of the required switching pulse widths. A reliable switching method is to use an Oersted field guided switching. Our simulation and experimental results show that the bi-directional magnetization switching could be realized by an EF with an external field as low as  ±5 Oe if the offset field could be removed.

  2. Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure

    NASA Astrophysics Data System (ADS)

    Bertaud, T.; Sowinska, M.; Walczyk, D.; Walczyk, Ch; Kubotsch, S.; Wenger, Ch; Schroeder, T.

    2012-12-01

    The electrical characteristics of different resistance states (virgin, OFF and ON) of a Ti/HfO2/TiN metal-insulator-metal device for resistance random access memory are investigated under different gas ambient. The influence of the atmosphere, the total pressure and the oxygen concentration during electrical measurements is underlined thanks to retention (I-t) and impedance spectroscopy (Z-f) measurements. The total pressure influences the current levels of the three different resistive states: when the total pressure decreases, the current increases, probably due to an increase of the concentration of oxygen vacancies in the HfO2.

  3. 3D Printing: 3D Printing of Shape Memory Polymers for Flexible Electronic Devices (Adv. Mater. 22/2016).

    PubMed

    Zarek, Matt; Layani, Michael; Cooperstein, Ido; Sachyani, Ela; Cohn, Daniel; Magdassi, Shlomo

    2016-06-01

    On page 4449, D. Cohn, S. Magdassi, and co-workers describe a general and facile method based on 3D printing of methacrylated macromonomers to fabricate shape-memory objects that can be used in flexible and responsive electrical circuits. Such responsive objects can be used in the fabrication of soft robotics, minimal invasive medical devices, sensors, and wearable electronics. The use of 3D printing overcomes the poor processing characteristics of thermosets and enables complex geometries that are not easily accessible by other techniques. PMID:27273436

  4. Program partitioning for NUMA multiprocessor computer systems. [Nonuniform memory access

    SciTech Connect

    Wolski, R.M.; Feo, J.T. )

    1993-11-01

    Program partitioning and scheduling are essential steps in programming non-shared-memory computer systems. Partitioning is the separation of program operations into sequential tasks, and scheduling is the assignment of tasks to processors. To be effective, automatic methods require an accurate representation of the model of computation and the target architecture. Current partitioning methods assume today's most prevalent models -- macro dataflow and a homogeneous/two-level multicomputer system. Based on communication channels, neither model represents well the emerging class of NUMA multiprocessor computer systems consisting of hierarchical read/write memories. Consequently, the partitions generated by extant methods do not execute well on these systems. In this paper, the authors extend the conventional graph representation of the macro-dataflow model to enable mapping heuristics to consider the complex communication options supported by NUMA architectures. They describe two such heuristics. Simulated execution times of program graphs show that the model and heuristics generate higher quality program mappings than current methods for NUMA architectures.

  5. Electrical Evaluation of RCA MWS5501D Random Access Memory, Volume 2, Appendix a

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. The address access time, address readout time, the data hold time, and the data setup time are some of the results surveyed.

  6. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    SciTech Connect

    Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  7. Electrical performance analysis of IC package for the high-end memory device

    NASA Astrophysics Data System (ADS)

    Lee, Dong H.; Han, Chan M.

    1997-08-01

    The developments of processing technology and design make it possible to increase the clock speed and the number of input outputs (I/Os) in memory devices. The interconnections of IC package are considered as an important factor to decide the performance of the memory devices. In order to overcome the limitations of the conventional package, new types of package such as Ball Grid Array (BGA), chip scale package or flip chip bonding are adopted by many IC manufacturers. The present work has compared the electrical performances of 3 different packages to provide deign guide for IC packages of the high performance memory devices in the future. Those packages are designed for the same memory devices to confront to the diversity of memory market demand. The conventional package using lead frame, wire bonded BGA using printed circuit board substrate and flip chip bonded BGA are analyzed. Their electrical performances are compared in the area of signal delay and coupling effect between signal interconnections. The electrical package modeling is built by extracting parasitic of interconnections in IC package through electro-magnetic simulations. The electrical package modeling is built by extracting parasitic of interconnections in IC package through electro-magnetic simulations. The analysis of electrical behavior is performed using SPICE model which is made to represent the real situation. The methodology presented is also capable of determining the most suitable memory package for a particular device based on the electrical performance.

  8. Role of the hippocampus in memory formation: restorative encoding memory integration neural device as a cognitive neural prosthesis.

    PubMed

    Berger, Theodore; Song, Dong; Chan, Rosa; Shin, Dae; Marmarelis, Vasilis; Hampson, Robert; Sweatt, Andrew; Heck, Christi; Liu, Charles; Wills, Jack; Lacoss, Jeff; Granacki, John; Gerhardt, Greg; Deadwyler, Sam

    2012-01-01

    Remind, which stands for "restorative encoding memory integration neural device," is a Defense Advanced Research Projects Agency (DARPA)-sponsored program to construct the first-ever cognitive prosthesis to replace lost memory function and enhance the existing memory capacity in animals and, ultimately, in humans. Reaching this goal involves understanding something fundamental about the brain that has not been understood previously: how the brain internally codes memories. In developing a hippocampal prosthesis for the rat, we have been able to demonstrate a multiple-input, multiple- output (MIMO) nonlinear model that predicts in real time the spatiotemporal codes for specific memories required for correct performance on a standard learning/memory task, i.e., delayed-nonmatch-to-sample (DNMS) memory. The MIMO model has been tested successfully in a number of contexts; most notably, in animals with a pharmacologically disabled hippocampus, we were able to reinstate long-term memories necessary for correct DNMS behavior by substituting a MIMO model-predicted code, delivered by electrical stimulation to the hippocampus through an array of electrodes, resulting in spatiotemporal hippocampal activity that is normally generated endogenously. We also have shown that delivering the same model-predicted code to electrode-implanted control animals with a normally functioning hippocampus substantially enhances animals memory capacity above control levels. These results in rodents have formed the basis for extending the MIMO model to nonhuman primates; this is now underway as the last step of the REMIND program before developing a MIMO-based cognitive prosthesis for humans. PMID:23014702

  9. Singaporean Parents' Views of Their Young Children's Access and Use of Technological Devices

    ERIC Educational Resources Information Center

    Ebbeck, Marjory; Yim, Hoi Yin Bonnie; Chan, Yvonne; Goh, Mandy

    2016-01-01

    Debates continue about the access young children have to technological devices, given the increasingly accessible and available technology in most developed countries. Concerns have been expressed by parents/caregivers and researchers, and questions have been raised about possible risks and benefits of these devices on young children who, in some…

  10. Making Physical Activity Accessible to Older Adults with Memory Loss: A Feasibility Study

    ERIC Educational Resources Information Center

    Logsdon, Rebecca G.; McCurry, Susan M.; Pike, Kenneth C.; Teri, Linda

    2009-01-01

    Purpose: For individuals with mild cognitive impairment (MCI), memory loss may prevent successful engagement in exercise, a key factor in preventing additional disability. The Resources and Activities for Life Long Independence (RALLI) program uses behavioral principles to make exercise more accessible for these individuals. Exercises are broken…

  11. 77 FR 26789 - Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-07

    ... violation of section 337 in the infringement of certain patents. 73 FR 75131. The principal respondent was... order. 75 FR 44989-90 (July 30, 2010). The Commission also issued cease and desist orders against those... COMMISSION Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers...

  12. Evaluation of Remote Memory Access Communication on the Cray XT3

    SciTech Connect

    Kot, Andriy; Tipparaju, Vinod; Nieplocha, Jarek; Bruggencate, Monika T.; Chrisochoides, Nikos

    2007-03-26

    This paper evaluates remote memory access (RMA) communication capabilities and performance on the Cray XT3. We discuss properties of the network hardware and Portals networking software layer and corresponding implementation issues for SHMEM and ARMCI portable RMA interfaces. The performance of these interfaces is studied and compared to MPI performance

  13. 76 FR 2336 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Final Results of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-13

    ...On September 14, 2010, the Department of Commerce published in the Federal Register its preliminary results of administrative review of the countervailing duty order on dynamic random access memory semiconductors from the Republic of Korea for the period January 1, 2008, through August 10, 2008. We provided interested parties with an opportunity to comment on the preliminary results. Our......

  14. Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

    NASA Astrophysics Data System (ADS)

    Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

    2014-11-01

    Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

  15. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2013-09-03

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  16. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A; Mamidala, Amith R

    2014-02-11

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  17. Flow-test device fits into restricted access passages

    NASA Technical Reports Server (NTRS)

    Fitzgerald, J. J.; Oberschmidt, M.; Rosenbaum, B. J.

    1967-01-01

    Test device using a mandrel with a collapsible linkage assembly enables a fluid flow sensor to be properly positioned in a restricted passage by external manipulation. This device is applicable to the combustion chamber of a rocket motor.

  18. 75 FR 20564 - Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-20

    ... Antidumping and Countervailing Duty Administrative Reviews and Requests for Revocation in Part, 74 FR 48224... International Trade Administration Dynamic Random Access Memory Semiconductors from the Republic of Korea... administrative review of the countervailing duty order on dynamic random access memory semiconductors from...

  19. 75 FR 44283 - In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-28

    ... America Corp. of Milpitas, California (collectively ``complainants''). 75 FR 14467-68 (March 25, 2010... COMMISSION In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same... within the United States after importation of certain dynamic random access memory semiconductors...

  20. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    NASA Astrophysics Data System (ADS)

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  1. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires.

    PubMed

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-01-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques. PMID:27279431

  2. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    PubMed Central

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-01-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques. PMID:27279431

  3. [The Requirements of Medical Device Market Access in India].

    PubMed

    Qin, Shaoyan; Cui, Tao; Yin, Haisong

    2016-01-01

    This paper introduces the premarket registration procedures and the post market regulatory requirements in India. According to Indian medical device act and related medical regulations on medical device, this is a preliminary discussion on the registration management system to provide referance for foreign medical device to enter India market. PMID:27197502

  4. Shared direct memory access on the Explorer 2-LX

    NASA Technical Reports Server (NTRS)

    Musgrave, Jeffrey L.

    1990-01-01

    Advances in Expert System technology and Artificial Intelligence have provided a framework for applying automated Intelligence to the solution of problems which were generally perceived as intractable using more classical approaches. As a result, hybrid architectures and parallel processing capability have become more common in computing environments. The Texas Instruments Explorer II-LX is an example of a machine which combines a symbolic processing environment, and a computationally oriented environment in a single chassis for integrated problem solutions. This user's manual is an attempt to make these capabilities more accessible to a wider range of engineers and programmers with problems well suited to solution in such an environment.

  5. Arterial devices for regional hepatic chemotherapy: transaxillary versus laparotomic access.

    PubMed

    Arru, M; Aldrighetti, L; Gremmo, F; Ronzoni, M; Angeli, E; Caterini, R; Ferla, G

    2000-01-01

    Introduction. Intra-Arterial Hepatic Chemotherapy (IAHC) based on floxuridine (FUdR) infusion is an effective treatment for hepatic metastases from colorectal cancer. A percutaneously implanted intra-arterial device may overcome the surgical stress of the laparotomic placement allowing an increase in the number of patients treated by IAHC. The aim of the present study is the comparative analysis of surgical and percutaneous transaxillary approaches to implant the catheter into the hepatic artery (HA) for IAHC. Materials and Methods. Between September 1993 and February 1999, 56 patients received an implantable infu-sion system [SynchroMed(R) (Medtronic, USA) or Port-a-cath(R) (Deltec, USA) connected to an external infusion pump (CADD(R) , Deltec, USA)] for IAHC. Twenty-eight patients (LPT group) underwent laparotomy to implant the catheter into the HA, the other 28 patients (PCT group) received a percutaneous catheter into the HA through a transaxillary percutaneous access. Indications for the laparotomic placement were: 1) synchronous metastases not suitable [technically unresectable or large (>40% of liver parenchyma) or multiple (> 3) metas-tases] for hepatic resection during colorectal surgery; 2) metachronous metastases treated by radical hepatic resection and subsequent adjuvant IAHC. Indications for percutaneous placement were: 1) metachronous metastases not suitable [see above] for hepatic resection; 2) metachronous metastases suitable for hepatic resection after neoadjuvant IAHC for tumor downstaging. All patients received IAHC based on continuous infusion of FU-dR (dose escalation 0.15-0.30 mg/kg/day for 14 days every 28 days) plus dexamethasone 28 mg. For the purpose of the study, the LPT group and the PCT group were comparatively analyzed in terms of age, gender, primary diagnosis, vascular anatomy of HA, ligation/embolization of aberrant HA, previous intestinal or hepatic surgery, contextual systemic chemotherapy, concomitant diseases. Safety and

  6. Memory Attacks on Device-Independent Quantum Cryptography

    NASA Astrophysics Data System (ADS)

    Barrett, Jonathan; Colbeck, Roger; Kent, Adrian

    2013-01-01

    Device-independent quantum cryptographic schemes aim to guarantee security to users based only on the output statistics of any components used, and without the need to verify their internal functionality. Since this would protect users against untrustworthy or incompetent manufacturers, sabotage, or device degradation, this idea has excited much interest, and many device-independent schemes have been proposed. Here we identify a critical weakness of device-independent protocols that rely on public communication between secure laboratories. Untrusted devices may record their inputs and outputs and reveal information about them via publicly discussed outputs during later runs. Reusing devices thus compromises the security of a protocol and risks leaking secret data. Possible defenses include securely destroying or isolating used devices. However, these are costly and often impractical. We propose other more practical partial defenses as well as a new protocol structure for device-independent quantum key distribution that aims to achieve composable security in the case of two parties using a small number of devices to repeatedly share keys with each other (and no other party).

  7. Memory attacks on device-independent quantum cryptography.

    PubMed

    Barrett, Jonathan; Colbeck, Roger; Kent, Adrian

    2013-01-01

    Device-independent quantum cryptographic schemes aim to guarantee security to users based only on the output statistics of any components used, and without the need to verify their internal functionality. Since this would protect users against untrustworthy or incompetent manufacturers, sabotage, or device degradation, this idea has excited much interest, and many device-independent schemes have been proposed. Here we identify a critical weakness of device-independent protocols that rely on public communication between secure laboratories. Untrusted devices may record their inputs and outputs and reveal information about them via publicly discussed outputs during later runs. Reusing devices thus compromises the security of a protocol and risks leaking secret data. Possible defenses include securely destroying or isolating used devices. However, these are costly and often impractical. We propose other more practical partial defenses as well as a new protocol structure for device-independent quantum key distribution that aims to achieve composable security in the case of two parties using a small number of devices to repeatedly share keys with each other (and no other party). PMID:23383767

  8. Magnetic Resonance Flow Velocity and Temperature Mapping of a Shape Memory Polymer Foam Device

    SciTech Connect

    Small IV, W; Gjersing, E; Herberg, J L; Wilson, T S; Maitland, D J

    2008-10-29

    Interventional medical devices based on thermally responsive shape memory polymer (SMP) are under development to treat stroke victims. The goals of these catheter-delivered devices include re-establishing blood flow in occluded arteries and preventing aneurysm rupture. Because these devices alter the hemodynamics and dissipate thermal energy during the therapeutic procedure, a first step in the device development process is to investigate fluid velocity and temperature changes following device deployment. A laser-heated SMP foam device was deployed in a simplified in vitro vascular model. Magnetic resonance imaging (MRI) techniques were used to assess the fluid dynamics and thermal changes associated with device deployment. Spatial maps of the steady-state fluid velocity and temperature change inside and outside the laser-heated SMP foam device were acquired. Though non-physiological conditions were used in this initial study, the utility of MRI in the development of a thermally-activated SMP foam device has been demonstrated.

  9. Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

    SciTech Connect

    Thomas, Luc Jan, Guenole; Le, Son; Wang, Po-Kang

    2015-04-20

    The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

  10. Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles

    NASA Astrophysics Data System (ADS)

    Oh, Sewook; Kim, Minkeun; Kim, Yejin; Jung, Hunsang; Yoon, Tae-Sik; Choi, Young-Jin; Jung Kang, Chi; Moon, Myeong-Ju; Jeong, Yong-Yeon; Park, In-Kyu; Ho Lee, Hyun

    2013-08-01

    An organic memory structure using monolayered aptamer conjugated gold nanoparticles (Au NPs) as charge storage nodes was demonstrated. Metal-pentacene-insulator-semiconductor device was adopted for the non-volatile memory effect through self assembly monolayer of A10-aptamer conjugated Au NPs, which was formed on functionalized insulator surface with prostate-specific membrane antigen protein. The capacitance versus voltage (C-V) curves obtained for the monolayered Au NPs capacitor exhibited substantial flat-band voltage shift (ΔVFB) or memory window of 3.76 V under (+/-)7 V voltage sweep. The memory device format can be potentially expanded to a highly specific capacitive sensor for the aptamer-specific biomolecule detection.

  11. High speed switching in quantum Dot/Ti-TiOx nonvolatile memory device

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang

    2016-03-01

    We report a Ti-TiOx/CdSe-ZnS core-shell quantum dot based bipolar nonvolatile resistive memory device. The device exhibits an ON/OFF ratio of 100 and is reproducible. The memory device showed good retention characteristics under stress and excellent stability even after 100,000 cycles of switching operation. The switching speed measured was around 15 ns. The devices are solution processed at room temperature in ambient atmosphere. The operating mechanism is discussed based on charge trapping in quantum dots resulting in the Coulomb blockade effect with a ZnS shell layer and metal-oxide layer acting as the barrier to confine the trapped charges. The proposed mechanism is validated by a three terminal device designed exclusively for this purpose. [Figure not available: see fulltext.

  12. The effectiveness of music as a mnemonic device on recognition memory for people with multiple sclerosis.

    PubMed

    Moore, Kimberly Sena; Peterson, David A; O'Shea, Geoffrey; McIntosh, Gerald C; Thaut, Michael H

    2008-01-01

    Research shows that people with multiple sclerosis exhibit learning and memory difficulties and that music can be used successfully as a mnemonic device to aid in learning and memory. However, there is currently no research investigating the effectiveness of music mnemonics as a compensatory learning strategy for people with multiple sclerosis. Participants with clinically definitive multiple sclerosis (N = 38) were given a verbal learning and memory test. Results from a recognition memory task were analyzed that compared learning through music (n = 20) versus learning through speech (n = 18). Preliminary baseline neuropsychological data were collected that measured executive functioning skills, learning and memory abilities, sustained attention, and level of disability. An independent samples t test showed no significant difference between groups on baseline neuropsychological functioning or on recognition task measures. Correlation analyses suggest that music mnemonics may facilitate learning for people who are less impaired by the disease. Implications for future research are discussed. PMID:18959453

  13. Optical Shared Memory Computing and Multiple Access Protocols for Photonic Networks

    NASA Astrophysics Data System (ADS)

    Li, Kuang-Yu.

    In this research we investigate potential applications of optics in massively parallel computer systems, especially focusing on design issues in three-dimensional optical data storage and free-space photonic networks. An optical implementation of a shared memory uses a single photorefractive crystal and can realize the set of memory modules in a digital shared memory computer. A complete instruction set consists of R sc EAD, W sc RITE, S sc ELECTIVE E sc RASE, and R sc EFRESH, which can be applied to any memory module independent of (and in parallel with) instructions to the other memory modules. In addition, a memory module can execute a sequence of R sc EAD operations simultaneously with the execution of a W sc RITE operation to accommodate differences in optical recording and readout times common to optical volume storage media. An experimental shared memory system is demonstrated and its projected performance is analyzed. A multiplexing technique is presented to significantly reduce both grating- and beam-degeneracy crosstalk in volume holographic systems, by incorporating space, angle, and wavelength as the multiplexing parameters. In this approach, each hologram, which results from the interference between a single input node and an object array, partially overlaps with the other holograms in its neighborhood. This technique can offer improved interconnection density, optical throughput, signal fidelity, and space-bandwidth product utilization. Design principles and numerical simulation results are presented. A free-space photonic cellular hypercube parallel computer, with emphasis on the design of a collisionless multiple access protocol, is presented. This design incorporates wavelength-, space-, and time-multiplexing to achieve multiple access, wavelength reuse, dense connectivity, collisionless communications, and a simple control mechanism. Analytic models based on semi-Markov processes are employed to analyze this protocol. The performance of the

  14. Effects of erbium doping of indium tin oxide electrode in resistive random access memory

    NASA Astrophysics Data System (ADS)

    Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-03-01

    Identical insulators and bottom electrodes were fabricated and capped by an indium tin oxide (ITO) film, either undoped or doped with erbium (Er), as a top electrode. This distinctive top electrode dramatically altered the resistive random access memory (RRAM) characteristics, for example, lowering the operation current and enlarging the memory window. In addition, the RESET voltage increased, whereas the SET voltage remained almost the same. A conduction model of Er-doped ITO is proposed through current-voltage (I-V) measurement and current fitting to explain the resistance switching mechanism of Er-doped ITO RRAM and is confirmed by material analysis and reliability tests.

  15. Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Pantelis, D. I.; Karakizis, P. N.; Dragatogiannis, D. A.; Charitidis, C. A.

    2016-06-01

    Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. In this chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed. Different MLC operation schemes with their physical mechanisms and a comprehensive analysis of resistance variability have been provided. Various factors that can induce variability and their effect on the resistance margin between the multiple resistance levels are assessed. The reliability characteristics and the impact on MLC storage have also been assessed.

  16. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

    PubMed Central

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Roy, V. A. L.

    2013-01-01

    The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics. PMID:23900459

  17. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

    PubMed

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Roy, V A L

    2013-01-01

    The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics. PMID:23900459

  18. Photo-enhanced polymer memory device based on polyimide containing spiropyran

    NASA Astrophysics Data System (ADS)

    Seok, Woong Chul; Son, Seok Ho; An, Tae Kyu; Kim, Se Hyun; Lee, Seung Woo

    2016-07-01

    This paper reports the synthesis of a new polyimide (PI) containing a spiropyran moiety in the side chain and its applications to the switchable polymer memory before and after UV exposure. UV exposure allows memory using spiropyran-based PI as an active layer with a higher current and lower switching-ON voltage compared to the unexposed device due to the structural changes in the spiropyran moiety after UV exposure. In addition, this study examined the effects of UV exposure on the performance of the memory containing spiropyran-based PI using the UV-Vis absorption spectra and space-charge limited conduction (SCLC) model. [Figure not available: see fulltext.

  19. Large Capacity of Conscious Access for Incidental Memories in Natural Scenes.

    PubMed

    Kaunitz, Lisandro N; Rowe, Elise G; Tsuchiya, Naotsugu

    2016-09-01

    When searching a crowd, people can detect a target face only by direct fixation and attention. Once the target is found, it is consciously experienced and remembered, but what is the perceptual fate of the fixated nontarget faces? Whereas introspection suggests that one may remember nontargets, previous studies have proposed that almost no memory should be retained. Using a gaze-contingent paradigm, we asked subjects to visually search for a target face within a crowded natural scene and then tested their memory for nontarget faces, as well as their confidence in those memories. Subjects remembered up to seven fixated, nontarget faces with more than 70% accuracy. Memory accuracy was correlated with trial-by-trial confidence ratings, which implies that the memory was consciously maintained and accessed. When the search scene was inverted, no more than three nontarget faces were remembered. These findings imply that incidental memory for faces, such as those recalled by eyewitnesses, is more reliable than is usually assumed. PMID:27507869

  20. Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies

    NASA Astrophysics Data System (ADS)

    Lee, Sungyung; Kim, Kinam

    2006-04-01

    For ferroelectric random access memory (FRAM) to be beneficial in future mobile devices, high-density FRAM with nm scaled cell should be developed. We have succeeded in scaling further the cell size of one-pass transistor and one-storage capacitor (1T1C) FRAM down to 0.27 μm2 at 150 nm technology node. Owing to new SrRuO3 (SRO) electrode technology along with ultrathin PbZrTiO3 (PZT) using metal organic chemical vapor deposition (MOCVD) technology, two-dimensional (2-D) metal-insulator-metal (MIM) ferroelectric capacitor was successfully scaled down vertically to 200 nm. By the application of a new double hard mask capacitor etching technology, 0.11-μm2-area 200-nm-thick 2-D PZT capacitor was successfully isolated with 180 nm spacing. As a result, a high remanent polarization of 40 μC/cm2 was obtained at 1.6 V on a 0.11 μm2 ferroelectric storage capacitor of the 0.27 μm2 cell 1T1C FRAM. Great advances in three-dimensional (3-D) ferroelectric capacitor, which is essential for 6-8 F2 cell 1T1C FRAM at nm scaled technology node, have been made by introducing a new atomic layer deposition (ALD) method for 3-D electrode and a novel MOCVD PZT deposition for 3-D PZT. As a result, for the first time, robust hysteresis was obtained from a 3-D PZT capacitor.

  1. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.

    2013-12-01

    In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

  2. Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory

    SciTech Connect

    Zhang, Rui; Lou, Jen-Chung; Tsai, Tsung-Ming E-mail: tcchang@mail.phys.nsysu.edu.tw; Chang, Kuan-Chang; Huang, Syuan-Yong; Shih, Chih-Cheng; Pan, Jhih-Hong; Tung, Cheng-Wei; Chang, Ting-Chang E-mail: tcchang@mail.phys.nsysu.edu.tw; Chen, Kai-Huang; Young, Tai-Fa; Chen, Hsin-Lu; Chen, Jung-Hui; Chen, Min-Chen; Syu, Yong-En; Sze, Simon M.

    2013-12-21

    In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

  3. Stochastic switching of TiO2-based memristive devices with identical initial memory states

    PubMed Central

    2014-01-01

    In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution. PMID:24994953

  4. Gold nanoparticle charge trapping and relation to organic polymer memory devices.

    PubMed

    Prime, D; Paul, S; Josephs-Franks, P W

    2009-10-28

    Nanoparticle-based polymer memory devices (PMDs) are a promising technology that could replace conventional silicon-based electronic memory, offering fast operating speeds, simple device structures and low costs. Here we report on the current state of nanoparticle PMDs and review some of the problems that are still present in the field. We also present new data regarding the charging of gold nanoparticles in metal-insulator-semiconductor capacitors, showing that charging is possible under the application of an electric field with a trapped charge density due to the nanoparticles of 3.3 x 10(12) cm(-2). PMID:19770145

  5. Design of an electronic synapse with spike time dependent plasticity based on resistive memory device

    NASA Astrophysics Data System (ADS)

    Hu, S. G.; Wu, H. T.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Yin, Y.; Hosaka, Sumio

    2013-03-01

    This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistive memory device. With the resistive memory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work according to the STDP rule, ensuring that the timing between pre and post-spikes leads to either the long term potentiation or long term depression. By using the synapse, a neural network with three neurons has been constructed to realize the STDP learning.

  6. 21 CFR 876.5540 - Blood access device and accessories.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 30 days. This generic type of device includes fistula needles, the single needle dialysis set (coaxial flow needle), and the single needle dialysis set (alternating flow needle). (3) Accessories...

  7. 21 CFR 876.5540 - Blood access device and accessories.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 30 days. This generic type of device includes fistula needles, the single needle dialysis set (coaxial flow needle), and the single needle dialysis set (alternating flow needle). (3) Accessories...

  8. 21 CFR 876.5540 - Blood access device and accessories.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 30 days. This generic type of device includes fistula needles, the single needle dialysis set (coaxial flow needle), and the single needle dialysis set (alternating flow needle). (3) Accessories...

  9. 21 CFR 876.5540 - Blood access device and accessories.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 30 days. This generic type of device includes fistula needles, the single needle dialysis set (coaxial flow needle), and the single needle dialysis set (alternating flow needle). (3) Accessories...

  10. 21 CFR 876.5540 - Blood access device and accessories.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 30 days. This generic type of device includes fistula needles, the single needle dialysis set (coaxial flow needle), and the single needle dialysis set (alternating flow needle). (3) Accessories...

  11. Code division in optical memory devices based on photon echo

    NASA Astrophysics Data System (ADS)

    Kalachev, Alexey A.; Vlasova, Daria D.

    2006-03-01

    The theory of multi-channel optical memory based on photon echo is developed. It is shown that under long-lived photon echo regime the writing and reading of information with code division is possible using phase modulation of reference and reading pulses. A simple method for construction of a system of noise-like signals, which is based on the segmentation of Frank sequence is proposed. It is shown that in comparison to the system of random biphase signals this system leads to the efficient decreasing of mutual influence of channels and increasing of random/noise ratio under reading of information.

  12. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials.

    PubMed

    Tan, Chaoliang; Liu, Zhengdong; Huang, Wei; Zhang, Hua

    2015-05-01

    Ultrathin two-dimensional (2D) nanomaterials, such as graphene and MoS2, hold great promise for electronics and optoelectronics due to their distinctive physical and electronic properties. Recent progress in high-yield, massive production of ultrathin 2D nanomaterials via various solution-based methods allows them to be easily integrated into electronic devices via solution processing techniques. Non-volatile resistive memory devices based on ultrathin 2D nanomaterials have been emerging as promising alternatives for the next-generation data storage devices due to their high flexibility, three-dimensional-stacking capability, simple structure, transparency, easy fabrication and low cost. In this tutorial review, we will summarize the recent progress in the utilization of solution-processed ultrathin 2D nanomaterials for fabrication of non-volatile resistive memory devices. Moreover, we demonstrate how to achieve excellent device performance by engineering the active layers, electrodes and/or device structure of resistive memory devices. On the basis of current status, the discussion is concluded with some personal insights into the challenges and opportunities in future research directions. PMID:25877687

  13. CMOS compatible electrode materials selection in oxide-based memory devices

    NASA Astrophysics Data System (ADS)

    Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

    2016-07-01

    Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

  14. Fabrication of poly(methyl methacrylate)-MoS2/graphene heterostructure for memory device application

    NASA Astrophysics Data System (ADS)

    Shinde, Sachin M.; Kalita, Golap; Tanemura, Masaki

    2014-12-01

    Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS2) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS2 crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS2 crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO3) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS2 crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS2 crystals. In the fabricated device, PMMA-MoS2 and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS2/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

  15. Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

    NASA Astrophysics Data System (ADS)

    Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M.

    2011-12-01

    In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.

  16. Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array

    NASA Astrophysics Data System (ADS)

    Sun, Wookyung; Choi, Sujin; Lim, Hyein; Shin, Hyungsoon

    2016-04-01

    The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation.

  17. Design of Unstructured Adaptive (UA) NAS Parallel Benchmark Featuring Irregular, Dynamic Memory Accesses

    NASA Technical Reports Server (NTRS)

    Feng, Hui-Yu; VanderWijngaart, Rob; Biswas, Rupak; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We describe the design of a new method for the measurement of the performance of modern computer systems when solving scientific problems featuring irregular, dynamic memory accesses. The method involves the solution of a stylized heat transfer problem on an unstructured, adaptive grid. A Spectral Element Method (SEM) with an adaptive, nonconforming mesh is selected to discretize the transport equation. The relatively high order of the SEM lowers the fraction of wall clock time spent on inter-processor communication, which eases the load balancing task and allows us to concentrate on the memory accesses. The benchmark is designed to be three-dimensional. Parallelization and load balance issues of a reference implementation will be described in detail in future reports.

  18. Non-Hebbian Learning Implementation in Light-Controlled Resistive Memory Devices

    PubMed Central

    Ungureanu, Mariana; Stoliar, Pablo; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2012-01-01

    Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implementation of non-Hebbian learning in a single solid-state resistive memory device. The output of our device is controlled not only by the applied voltages, but also by the illumination conditions under which it operates. We demonstrate that our metal/oxide/semiconductor device learns more efficiently at higher applied voltages but also when light, an external parameter, is present during the information writing steps. Conversely, memory erasing is more efficiently at higher applied voltages and in the dark. Translating neuronal activity into simple solid-state devices could provide a deeper understanding of complex brain processes and give insight into non-binary computing possibilities. PMID:23251679

  19. Dramatic reduction of read disturb through pulse width control in spin torque random access memory

    NASA Astrophysics Data System (ADS)

    Wang, Zihui; Wang, Xiaobin; Gan, Huadong; Jung, Dongha; Satoh, Kimihiro; Lin, Tsann; Zhou, Yuchen; Zhang, Jing; Huai, Yiming; Chang, Yao-Jen; Wu, Te-ho

    2013-09-01

    Magnetizations dynamic effect in low current read disturb region is studied both experimentally and theoretically. Dramatic read error rate reduction through read pulse width control is theoretically predicted and experimentally observed. The strong dependence of read error rate upon pulse width contrasts conventional energy barrier approach and can only be obtained considering detailed magnetization dynamics at long time thermal magnetization reversal region. Our study provides a design possibility for ultra-fast low current spin torque random access memory.

  20. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 5, Appendix D

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS 5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Average input high current, worst case input high current, output low current, and data setup time are some of the results presented.

  1. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 4, Appendix C

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Statistical analysis data is supplied along with write pulse width, read cycle time, write cycle time, and chip enable time data.

  2. Reliability issue on pipeline defects in CMOS memory devices

    NASA Astrophysics Data System (ADS)

    Youn, So; Terrell, Kyle; Wu, Chau-Chin; Shy, Paul; Lien, Chuen-Der

    1996-09-01

    Pipeline defects have recently been reported in a leakage source of CMOS devices when die shrink. We report the observed physical defects which shorted source and drain under .6 u short channel CMOS devices by the Wright-etching of the defective devices. We also found pipeline defects filled with phosphorous doped n-type material by the cross- sectioning of the pipeline in the channel of NMOS transistor. We also observed that devices are failing during high temperature reliability test, which causes single bit failure. This indicates that there are many potential defective die to reach assembly process even though most of detectives are discarded at wafer sort. SEM analysis identifies that location of defective parts is decorated with a pair of protruding holes at the 90 degree corner of field island of faulty pass-gate of SRAM. These pipeline defects are caused mainly by the compressed stress from field oxide. Reliability and yield have been improved since the pipeline were minimized after relieving stress on pass- gate.

  3. Measurement of irregularities in angular velocities of rotating assemblies in memory devices on magnetic carriers

    NASA Technical Reports Server (NTRS)

    Virakas, G. I.; Matsyulevichyus, R. A.; Minkevichyus, K. P.; Potsyus, Z. Y.; Shirvinskas, B. D.

    1973-01-01

    Problems in measurement of irregularities in angular velocity of rotating assemblies in memory devices with rigid and flexible magnetic data carriers are discussed. A device and method for determination of change in angular velocities in various frequency and rotation rate ranges are examined. A schematic diagram of a photoelectric sensor for recording the signal pulses is provided. Mathematical models are developed to show the amount of error which can result from misalignment of the test equipment.

  4. Hand geometry biometric device for secure access control

    SciTech Connect

    Colbert, C.; Moles, D.R. )

    1991-01-01

    This paper reports that the authors developed for the Air Force the Mark VI Personal Identity Verifier (PIV) for controlling access to a fixed or mobile ICBM site, a computer terminal, or mainframe. The Mark VI records the digitized silhouettes of four fingers of each hand on an AT and T smart card. Like fingerprints, finger shapes, lengths, and widths constitute an unguessable biometric password. A Security Officer enrolls an authorized person who places each hand, in turn, on a backlighted panel. An overhead scanning camera records the right and left hand reference templates on the smart card. The Security Officer adds to the card: name, personal identification number (PIN), and access restrictions such as permitted days of the week, times of day, and doors. To gain access, cardowner inserts card into a reader slot and places either hand on the panel. Resulting access template is matched to the reference template by three sameness algorithms. The final match score is an average of 12 scores (each of the four fingers, matched for shape, length, and width), expressing the degree of sameness. (A perfect match would score 100.00.) The final match score is compared to a predetermined score (threshold), generating an accept or reject decision.

  5. Optical memory effect in ZnO nanowire based organic bulk heterojunction devices

    NASA Astrophysics Data System (ADS)

    Santhanakrishna, Anand Kumar; Takshi, Arash

    2015-09-01

    Due to the required established field to separate photogenerated electrons and holes, the current- voltage (I-V) characteristic in almost all photovoltaic devices in dark is an exponential curve. Upon illumination, the shape of the curve remains almost the same, but the current shifts due to the photocurrent. Also, because of the lack of any storage mechanism, the I-V curve returns to the dark characteristic immediately after light cessation. Here, we are reporting a case study performed on a photo-electric memory effect in an organic bulk hetrojuction device made of ZnO nanowires as the electron transport layer under ambient conditions and within a sealed transfer box filled with nitrogen. The I-V characteristic in dark and light showed a unique change from a rectifying response in dark to a resistive behavior in light. Additionally, after light cessation, a memory effect was observed with a slow transition from the resistive to rectifying response same as the original dark characteristic. The memory effect and its I-V characteristics were tested for the two cases. For practical applications as a photo memory device, further experiments are required to gain a better understanding of the mechanism behind the observed memory effect for the two different cases.

  6. Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

    PubMed

    Panja, Rajeswar; Roy, Sourav; Jana, Debanjan; Maikap, Siddheswar

    2014-12-01

    Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu filaments) in the Al/Cu/Al2O3/TiN structures, which can be used for three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 × 8 to 0.4 × 0.4 μm(2) have been measured. The 8-μm devices show 100% yield of Cu pillars, whereas only 74% successful is observed for the 0.4-μm devices, because smaller size devices have higher Joule heating effect and larger size devices show long read endurance of 10(5) cycles at a high read voltage of -1.5 V. On the other hand, the resistive switching memory characteristics of the 0.4-μm devices with a 2-nm-thick Al2O3 film show superior as compared to those of both the larger device sizes and thicker (10 nm) Al2O3 film, owing to higher Cu diffusion rate for the larger size and thicker Al2O3 film. In consequence, higher device-to-device uniformity of 88% and lower average RESET current of approximately 328 μA are observed for the 0.4-μm devices with a 2-nm-thick Al2O3 film. Data retention capability of our memory device of >48 h makes it a promising one for future nanoscale nonvolatile application. This conductive bridging resistive random access memory (CBRAM) device is forming free at a current compliance (CC) of 30 μA (even at a lowest CC of 0.1 μA) and operation voltage of ±3 V at a high resistance ratio of >10(4). PMID:26088986

  7. Immigration, language proficiency, and autobiographical memories: Lifespan distribution and second-language access.

    PubMed

    Esposito, Alena G; Baker-Ward, Lynne

    2016-08-01

    This investigation examined two controversies in the autobiographical literature: how cross-language immigration affects the distribution of autobiographical memories across the lifespan and under what circumstances language-dependent recall is observed. Both Spanish/English bilingual immigrants and English monolingual non-immigrants participated in a cue word study, with the bilingual sample taking part in a within-subject language manipulation. The expected bump in the number of memories from early life was observed for non-immigrants but not immigrants, who reported more memories for events surrounding immigration. Aspects of the methodology addressed possible reasons for past discrepant findings. Language-dependent recall was influenced by second-language proficiency. Results were interpreted as evidence that bilinguals with high second-language proficiency, in contrast to those with lower second-language proficiency, access a single conceptual store through either language. The final multi-level model predicting language-dependent recall, including second-language proficiency, age of immigration, internal language, and cue word language, explained ¾ of the between-person variance and (1)/5 of the within-person variance. We arrive at two conclusions. First, major life transitions influence the distribution of memories. Second, concept representation across multiple languages follows a developmental model. In addition, the results underscore the importance of considering language experience in research involving memory reports. PMID:26274061

  8. Electro-optical switching and memory display device

    DOEpatents

    Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

    1986-01-01

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  9. Electro-optical switching and memory display device

    DOEpatents

    Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

    1983-12-29

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  10. Realization of transient memory-loss with NiO-based resistive switching device

    NASA Astrophysics Data System (ADS)

    Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

    2012-11-01

    A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

  11. A Guide to Paperless Braille Devices. Random Access.

    ERIC Educational Resources Information Center

    Leventhal, J.; And Others

    1988-01-01

    This review examines electronic braille input-output devices which have a braille keyboard for data entry and/or a braille display. Four braille notetakers and two braille computer systems are evaluated, commenting on their keyboards, ease of use, documentation, and analysis of speech and/or the braille display. (JDD)

  12. Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory

    NASA Astrophysics Data System (ADS)

    Yeung, Fai; Ahn, Su-Jin; Hwang, Young-Nam; Jeong, Chang-Wook; Song, Yoon-Jong; Lee, Su-Youn; Lee, Se-Ho; Ryoo, Kyung-Chang; Park, Jae-Hyun; Shin, Jae-Min; Jeong, Won-Cheol; Kim, Young-Tae; Koh, Gwan-Hyeob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, Kinam

    2005-04-01

    Phase-change random access memory is considered a potential challenger for conventional memories, such as dynamic random access memory and flash memory due to its numerous advantages. Nevertheless, high reset current is the ultimate problem in developing high-density phase-change random access memory (PRAM). We focus on the adoption of Ge2Sb2Te5 confined structures to achieve lower reset currents. By changing from a normal to a GST confined structure, the reset current drops to as low as 0.8 mA. Eventually, our integrated 64 Mb PRAM based on 0.18 μm CMOS technology offers a large sensing margin: Rreset ˜200 kΩ and Rset ˜2 kΩ, as well as reasonable reliability: an endurance of 1.0× 109 cycles and a retention time of 2 years at 85°C.

  13. Performance and characteristics of double layer porous silicon oxide resistance random access memory

    NASA Astrophysics Data System (ADS)

    Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M.

    2013-06-01

    A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiOx layer structure, Zr:SiOx/porous SiOx structure outperforms from various aspects, including low operating voltages, tighter distributions of set voltage, higher stability of both low resistance state and high resistance state, and satisfactory endurance characteristics. Electric field simulation by comsolTM Multiphysics is applied, which corroborates that intensive electric field around the pore in porous SiOx layer guides the conduction of electrons. The constraint of conduction path leads to better stabilization and prominent performance of bilayer resistive switching devices.

  14. 76 FR 4375 - In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-25

    ...''). 74 FR 43723-4 (August 27, 2009). The complaint, as amended and supplemented, alleges violations of... COMMISSION In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of... flash memory devices and products containing same by reason of infringement of certain claims of...

  15. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

    PubMed

    Choi, Min Sup; Lee, Gwan-Hyoung; Yu, Young-Jun; Lee, Dae-Yeong; Lee, Seung Hwan; Kim, Philip; Hone, James; Yoo, Won Jong

    2013-01-01

    Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials. PMID:23535645

  16. Temperature induced complementary switching in titanium oxide resistive random access memory

    NASA Astrophysics Data System (ADS)

    Panda, D.; Simanjuntak, F. M.; Tseng, T.-Y.

    2016-07-01

    On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

  17. Comprehension of Linguistic Dependencies: Speed-Accuracy Tradeoff Evidence for Direct-Access Retrieval From Memory

    PubMed Central

    Foraker, Stephani; McElree, Brian

    2012-01-01

    Comprehenders can rapidly and efficiently interpret expressions with various types of non-adjacent dependencies. In the sentence The boy that the teacher warned fell, boy is readily interpreted as the subject of the verb fall despite the fact that a relative clause, that the teacher warned, intervenes between the two dependent elements. We review research investigating three memory operations proposed for resolving this and other types of non-adjacent dependencies: serial search retrieval, in which the dependent constituent is recovered by a search process through representations in memory, direct-access retrieval in which the dependent constituent is recovered directly by retrieval cue operations without search, and active maintenance of the dependent constituent in focal attention. Studies using speed-accuracy tradeoff methodology to examine the full timecourse of interpreting a wide range of non-adjacent dependencies indicate that comprehenders retrieve dependent constituents with a direct-access operation, consistent with the claim that representations formed during comprehension are accessed with a cue-driven, content-addressable retrieval process. The observed timecourse profiles are inconsistent with a broad class of models based on several search operations for retrieval. The profiles are also inconsistent with active maintenance of a constituent while concurrently processing subsequent material, and suggest that, with few exceptions, direct-access retrieval is required to process non-adjacent dependencies. PMID:22448181

  18. Application of nanomaterials in two-terminal resistive-switching memory devices

    PubMed Central

    Ouyang, Jianyong

    2010-01-01

    Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs), nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. PMID:22110862

  19. Recent advances in spintronics for emerging memory devices

    NASA Astrophysics Data System (ADS)

    Kang, Seung H.

    2008-09-01

    The emerging field of spintronics has the potential to bring game-changing opportunities to nanoelectronic technologies far beyond its traditional contribution to mass storage applications such as hard disk drives. The value proposition is timely since the dominant semiconductor industry is in pursuit of “More-than-Moore” to extend the technology roadmap or to create functional diversifications through enhanced system platforms. This article overviews a promising spintronic device in conjunction with recent breakthroughs in tunnel magnetoresistance and spin-transfer-torque magnetization switching.

  20. Daily Access to Sucrose Impairs Aspects of Spatial Memory Tasks Reliant on Pattern Separation and Neural Proliferation in Rats

    ERIC Educational Resources Information Center

    Reichelt, Amy C.; Morris, Margaret J.; Westbrook, Reginald Frederick

    2016-01-01

    High sugar diets reduce hippocampal neurogenesis, which is required for minimizing interference between memories, a process that involves "pattern separation." We provided rats with 2 h daily access to a sucrose solution for 28 d and assessed their performance on a spatial memory task. Sucrose consuming rats discriminated between objects…

  1. Encoding and Retrieval Processes Involved in the Access of Source Information in the Absence of Item Memory

    ERIC Educational Resources Information Center

    Ball, B. Hunter; DeWitt, Michael R.; Knight, Justin B.; Hicks, Jason L.

    2014-01-01

    The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were "related" to the target item but never actually studied.…

  2. An in vitro comparison of microbial ingress into 8 different needleless IV access devices.

    PubMed

    Casey, Anna; Karpanen, Tarja; Nightingale, Peter; Elliott, Tom

    2015-01-01

    There are conflicting reports of the effect needleless intravenous access devices have on rates of catheter-related bloodstream infection. The aim of this study was to identify any differences between the rates of microbial ingress into 8 different devices following contamination. Each type of device was subjected to a 7-day clinical simulation that involved repeated microbial contamination of the injection site and decontamination followed by saline flushes. Significant differences in the number of microorganisms associated with each device were detected in the saline eluates. Three positive-displacement mechanical valves were associated with the ingress of significantly fewer microorganisms compared with other devices. PMID:25545971

  3. A bio-inspired memory device based on interfacing Physarum polycephalum with an organic semiconductor

    SciTech Connect

    Romeo, Agostino; Dimonte, Alice; Tarabella, Giuseppe; D’Angelo, Pasquale E-mail: iannotta@imem.cnr.it; Erokhin, Victor; Iannotta, Salvatore E-mail: iannotta@imem.cnr.it

    2015-01-01

    The development of devices able to detect and record ion fluxes is a crucial point in order to understand the mechanisms that regulate communication and life of organisms. Here, we take advantage of the combined electronic and ionic conduction properties of a conducting polymer to develop a hybrid organic/living device with a three-terminal configuration, using the Physarum polycephalum Cell (PPC) slime mould as a living bio-electrolyte. An over-oxidation process induces a conductivity switch in the polymer, due to the ionic flux taking place at the PPC/polymer interface. This behaviour endows a current-depending memory effect to the device.

  4. Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

    NASA Astrophysics Data System (ADS)

    Wang, Jian-Ping

    An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

  5. Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

    NASA Astrophysics Data System (ADS)

    Tripathi, Udbhav; Kaur, Ramneek

    2016-05-01

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  6. Encryption Devices for Use in a Conditional Access System

    NASA Astrophysics Data System (ADS)

    Pinder, Howard G.; Palgon, Michael S.

    2002-07-01

    A cable television system provides conditional access to services. The cable television system includes a headend from which service 'instances', or programs, are broadcast and a plurality of set top units for receiving the instances and selectively decrypting the instances for display to system subscribers. The service instances are encrypted using public and/or private keys provided by service providers or central authorization agents. Keys used by the set tops for selective decryption may also be public or private in nature, and such keys may be reassigned at different times to provide a cable television system in which piracy concerns are minimized.

  7. System and method for programmable bank selection for banked memory subsystems

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Hoenicke, Dirk; Ohmacht, Martin; Salapura, Valentina; Sugavanam, Krishnan

    2010-09-07

    A programmable memory system and method for enabling one or more processor devices access to shared memory in a computing environment, the shared memory including one or more memory storage structures having addressable locations for storing data. The system comprises: one or more first logic devices associated with a respective one or more processor devices, each first logic device for receiving physical memory address signals and programmable for generating a respective memory storage structure select signal upon receipt of pre-determined address bit values at selected physical memory address bit locations; and, a second logic device responsive to each of the respective select signal for generating an address signal used for selecting a memory storage structure for processor access. The system thus enables each processor device of a computing environment memory storage access distributed across the one or more memory storage structures.

  8. Feasibility study of molecular memory device based on DNA using methylation to store information

    NASA Astrophysics Data System (ADS)

    Jiang, Liming; Qiu, Wanzhi; Al-Dirini, Feras; Hossain, Faruque M.; Evans, Robin; Skafidas, Efstratios

    2016-07-01

    DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

  9. Vertically Stackable Novel One-Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism

    NASA Astrophysics Data System (ADS)

    Cho, Seongjae; Lee, Jung Hoon; Ryoo, Kyung-Chang; Jung, Sunghun; Lee, Jong-Ho; Park, Byung-Gook

    2011-12-01

    In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array structures based on silicon technology are proposed. There have been many features of OTP NVM devices utilizing various combinations of channel, breakdown region, barrier, and contact materials. However, this invention can be realized by simple materials and fabrication methods: it is silicon-based materials and fully compatible with the conventional CMOS process. An individual memory cell is a silicon diode vertically integrated. Historically, OTP memories were widely used for read-only-memory (ROM) in the central processing unit (CPU) of the computer systems. By implanting the nanoscale fabrication technology into the concept of OTP memory, innovative high-density NVM appliances for massive storage media becomes very promising. The program operation is performed by breaking down the thin oxide layer between pn doped structure and wordline (WL) and its state can be sensed by the leakage current through the broken oxide. Since this invention is based on neither transistor structure nor charge-based mechanism, it is highly reliable and functional for the ultra-large scale integration. The feasibility of its stacked array will be also checked.

  10. Interleaved synchronous bus access protocol for a shared memory multi-processor system

    SciTech Connect

    Moore, W.T.

    1989-01-10

    A method is described for providing asynchronous processors with inter-processor communication and access to several memory modules over a common bus which includes a first bus and a second bus, comprising: providing clock pulses on the common bus, each pulse having a period; asserting a request signal and placing priority signal on the common bus; polling the processors during the first period to determine whether the processors request access to the common bus and to determine which one processor has priority; sending a destination address from the one processor to a destination during a second period, the destination being chosen from the processors and the several memory modules; performing one of reading input data between the destination and the processor; multiplexing priority and reading input data signals on the first bus, and multiplexing address and writing output data signals on the second bus; generating poll inhibit signals prior to each reading input data signal and prior to each memory address signal preceding a writing output data operation; and queuing the input data in a first-in-first-out manner for each of the processors when the input data indicates an interprocessor interrupt.

  11. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

    SciTech Connect

    Lee, Bong-Sub Darmawikarta, Kristof; Abelson, John R.; Raoux, Simone; Shih, Yen-Hao; Zhu, Yu

    2014-02-17

    The nanoscale crystal nuclei in an amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} bit in a phase change memory device were evaluated by fluctuation transmission electron microscopy. The quench time in the device (∼10 ns) afforded more and larger nuclei in the melt-quenched state than in the as-deposited state. However, nuclei were even more numerous and larger in a test structure with a longer quench time (∼100 ns), verifying the prediction of nucleation theory that slower cooling produces more nuclei. It also demonstrates that the thermal design of devices will strongly influence the population of nuclei, and thus the speed and data retention characteristics.

  12. Investigation of charge trapping mechanism for nanocrystal-based organic nonvolatile floating gate memory devices by band structure analysis

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Hoon; Lim, Ki-Tae; Park, Eung-Kyu; Shin, Ha-Chul; Kim, Chung Soo; Park, Kee-Chan; Ahn, Joung-Real; Bang, Jin Ho; Kim, Yong-Sang

    2016-05-01

    This paper investigates the charge trapping mechanism and electrical performance of CdSe nanocrystals, such as nanoparticles and nanowires in organic floating gate memory devices. Despite of same chemical component, each nanocrystals show different electrical performances with distinct trapping mechanism. CdSe nanoparticles trap holes in the memory device; on the contrary, nanowires trap electrons. This phenomenon is mainly due to the difference of energy band structures between nanoparticles and nanowires, measured by the ultraviolet photoelectron spectroscopy. Also, we investigated the memory performance with C- V characteristics, charging and discharging phenomena, and retention time. The nanoparticle based hole trapping memory device has large memory window while the nanowire based electron trapping memory shows a narrow memory window. In spite of narrow memory window, the nanowire based memory device shows better retention performance of about 55% of the charge even after 104 sec of charging. The contrasting performance of nanoparticle and nanowire is attributed to the difference in their energy band and the morphology of thin layer in the device. [Figure not available: see fulltext.

  13. Extremely small test cell structure for resistive random access memory element with removable bottom electrode

    SciTech Connect

    Koh, Sang-Gyu; Kishida, Satoru; Kinoshita, Kentaro

    2014-02-24

    We established a method of preparing an extremely small memory cell by fabricating a resistive random access memory (ReRAM) structure on the tip of a cantilever of an atomic force microscope. This structure has the high robustness against the drift of the cantilever, and the effective cell size was estimated to be less than 10 nm in diameter due to the electric field concentration at the tip of the cantilever, which was confirmed using electric field simulation. The proposed structure, which has a removable bottom electrode, enables not only the preparation of a tiny ReRAM structure but also the performance of unique experiments, by making the most of its high robustness against the drift of the cantilever.

  14. Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)-oxadiazole composites.

    PubMed

    Sun, Yanmei; Miao, Fengjuan; Li, Rui; Wen, Dianzhong

    2015-11-28

    Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated. The current-voltage characteristics of the fabricated devices show different electrical conductance behaviors, such as the write-once read-many-times (WORM) memory effect, the rewritable flash memory effect and insulator behavior, which depend on the content of PBD in the PVP + PBD composites. The OFF and ON states of the WORM and rewritable flash memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices. PMID:26490192

  15. Design and verification of a shape memory polymer peripheral occlusion device.

    PubMed

    Landsman, Todd L; Bush, Ruth L; Glowczwski, Alan; Horn, John; Jessen, Staci L; Ungchusri, Ethan; Diguette, Katelin; Smith, Harrison R; Hasan, Sayyeda M; Nash, Daniel; Clubb, Fred J; Maitland, Duncan J

    2016-10-01

    Shape memory polymer foams have been previously investigated for their safety and efficacy in treating a porcine aneurysm model. Their biocompatibility, rapid thrombus formation, and ability for endovascular catheter-based delivery to a variety of vascular beds makes these foams ideal candidates for use in numerous embolic applications, particularly within the peripheral vasculature. This study sought to investigate the material properties, safety, and efficacy of a shape memory polymer peripheral embolization device in vitro. The material characteristics of the device were analyzed to show tunability of the glass transition temperature (Tg) and the expansion rate of the polymer to ensure adequate time to deliver the device through a catheter prior to excessive foam expansion. Mechanical analysis and flow migration studies were performed to ensure minimal risk of vessel perforation and undesired thromboembolism upon device deployment. The efficacy of the device was verified by performing blood flow studies that established affinity for thrombus formation and blood penetration throughout the foam and by delivery of the device in an ultrasound phantom that demonstrated flow stagnation and diversion of flow to collateral pathways. PMID:27419615

  16. Conductive Filament Expansion in TaOx Bipolar Resistive Random Access Memory during Pulse Cycling

    NASA Astrophysics Data System (ADS)

    Ninomiya, Takeki; Katayama, Koji; Muraoka, Shunsaku; Yasuhara, Ryutaro; Mikawa, Takumi; Wei, Zhiqiang

    2013-11-01

    The post-cycling data retention of filamentary operated resistive random access memory (ReRAM) can be improved by minimizing conductive filament expansion during pulse cycling. We find that filament size gradually grows with increasing pulse cycles due to oxygen diffusion from the region surrounding each filament. To achieve long term use of ReRAM while suppressing filament expansion, the key is to control both electric power and pulse width input during switching. We minimize CF expansion based on this concept and demonstrate long data retention even after 106 pulse switchings under optimized reset conditions.

  17. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    SciTech Connect

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-07

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  18. Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

    NASA Astrophysics Data System (ADS)

    Tseng, Yi-Ting; Tsai, Tsung-Ming; Chang, Ting-Chang; Shih, Chih-Cheng; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Li, Yu-Chiuan; Lin, Chih-Yang; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M.

    2015-05-01

    In this study of resistance random access memory in a resistive switching film, the breakdown degree was controlled by varying forming current compliance. A SiOx layer was introduced into the ZnO layer of the structure to induce both typical bipolar resistive switching (RS) and complementary resistive switching (CRS). In addition, the SiOx layer-generated vacuum spaces in typical bipolar RS can be verified by electrical characteristics. Changing forming current compliance strikingly modifies the oxygen storage capacity of the inserted SiOx layer. CRS can be achieved, therefore, by tuning the oxygen ion storage behavior made possible by the SiOx layer.

  19. Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory

    NASA Astrophysics Data System (ADS)

    Bae, Junsoo; Hwang, Kyuman; Park, Kwangho; Jeon, Seongbu; Kang, Dae-hwan; Park, Soonoh; Ahn, Juhyeon; Kim, Seoksik; Jeong, Gitae; Chung, Chilhee

    2011-04-01

    The cell failures after cycling endurance in phase-change random access memory (PRAM) have been classified into three groups, which have been analyzed by transmission electron microscopy (TEM). Both stuck reset of the set state (D0) and stuck set of the reset state (D1) are due to a void created inside GeSbTe (GST) film or thereby lowering density of GST film. The decrease of the both set and reset resistances that leads to the tails from the reset distribution are induced from the Sb increase with cycles.

  20. Optical and electronic error correction schemes for highly parallel access memories

    NASA Astrophysics Data System (ADS)

    Neifeld, Mark A.; Hayes, Jerry D.

    1993-11-01

    We have fabricated and tested an optically addressed, parallel electronic Reed-Solomon decoder for use with parallel access optical memories. A comparison with various serial implementations has demonstrated that for many instances of code block size and error correction capability, the parallel approach is superior from the perspectives of VLSI layout area and decoding latency. The demonstrated Reed-Solomon parallel pipeline decoder operates on 60 bit input words and has been demonstrated at a clock rate of 5 MHz yielding a demonstrated data rate of 300 Mbps.

  1. Random access memory immune to single event upset using a T-resistor

    DOEpatents

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  2. A random access memory immune to single event upset using a T-Resistor

    DOEpatents

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  3. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    NASA Astrophysics Data System (ADS)

    Huang, Da; Wu, Jun-Jie; Tang, Yu-Hua

    2013-03-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings.

  4. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    SciTech Connect

    Munira, Kamaram; Visscher, P. B.

    2015-05-07

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  5. Positive alcohol expectancies and drinking behavior: the influence of expectancy strength and memory accessibility.

    PubMed

    Palfai, T; Wood, M D

    2001-03-01

    College student drinkers (N = 314) participated in a health survey in which they (a) completed an alcohol-related memory association task (expectancy accessibility measure), (b) rated their positive expectancies about alcohol use (expectancy strength measure), and (c) reported their level of alcohol involvement. Hierarchical regression analyses showed that both expectancy accessibility and expectancy strength predicted frequency of alcohol use and alcohol-related problems. Moreover, moderational analyses showed that the association between expectancy strength and frequency of alcohol use was greater for those who generated more alcohol responses on the expectancy association task. These findings suggest that the outcome association measure and Likert scale ratings of expectancies may assess distinct properties of expectancy representations, which may have independent and interactive effects on different aspects of drinking behavior. PMID:11255940

  6. Conducting-interlayer SiOx memory devices on rigid and flexible substrates.

    PubMed

    Wang, Gunuk; Raji, Abdul-Rahman O; Lee, Jae-Hwang; Tour, James M

    2014-02-25

    SiOx memory devices that offer significant improvement in switching performance were fabricated at room temperature with conducting interlayers such as Pd, Ti, carbon, or multilayer graphene. In particular, the Pd-interlayer SiOx memory devices exhibited improvements in lowering the electroforming voltages and threshold voltages as the number of inserted Pd layers was increased, as compared to a pure SiOx memory structure. In addition, we demonstrated that the Pd-interlayer SiOx junction fabricated on a flexible substrate maintained low electroforming voltage and mechanically stable switching properties. From these observations, a possible switching mechanism is discussed based on the formation of individual conducting paths at the weakest edge regions of each SiOx film, where the normalized bond-breaking probability of SiOx is influenced by the voltage and the thickness of SiOx. This fabrication approach offers a useful structural platform for next-generation memory applications for enhancement of the switching properties while maintaining a low-temperature fabrication method that is even amenable with flexible substrates. PMID:24446742

  7. Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory

    NASA Astrophysics Data System (ADS)

    Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-06-01

    In this letter, we inserted a low dielectric constant (low-k) or high dielectric constant (high-k) material as a switching layer in indium–tin-oxide-based resistive random-access memory. After measuring the two samples, we found that the low-k material device has very low operating voltages (‑80 and 110 mV for SET and RESET operations, respectively). Current fitting results were then used with the COMSOL software package to simulate electric field distribution in the layers. After combining the electrical measurement results with simulations, a conduction model was proposed to explain resistance switching behaviors in the two structures.

  8. Total ionizing dose effect in an input/output device for flash memory

    NASA Astrophysics Data System (ADS)

    Liu, Zhang-Li; Hu, Zhi-Yuan; Zhang, Zheng-Xuan; Shao, Hua; Chen, Ming; Bi, Da-Wei; Ning, Bing-Xu; Zou, Shi-Chang

    2011-12-01

    Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

  9. Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles.

    PubMed

    Lo, Chen-Tsyr; Watanabe, Yu; Oya, Hiroshi; Nakabayashi, Kazuhiro; Mori, Hideharu; Chen, Wen-Chang

    2016-06-01

    Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping. PMID:27180874

  10. Surgical approaches to vascular access for large-caliber devices in preclinical research models.

    PubMed

    Barka, Noah; Rakow, Nancy; Lentz, Linnea; Kopcak, Michael; Wika, Kent; Menk, Ana; Green, Mike

    2010-07-01

    Percutaneous vascular access options in preclinical models are often smaller than the relevant structures in humans or undersized for early-prototype research devices. Here we describe the surgical approaches and results for surgical vascular access sites in preclinical swine and sheep models. Fourteen adult miniature swine underwent successful 18-French vascular access by means of thoracotomy to the brachiocephalic artery. In addition, 11 swine and 10 sheep underwent successful 22-French vascular access by means of retroperitoneal laparotomy to the abdominal aorta. The relevancy of approach angles and vessel tortuosity should be considered when selecting appropriate preclinical models and techniques. The techniques described are effective for delivery of large-caliber devices in preclinical testing. PMID:20819395

  11. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    NASA Astrophysics Data System (ADS)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  12. Prototype fabrication and preliminary in vitro testing of a shape memory endovascular thrombectomy device.

    PubMed

    Small, Ward; Wilson, Thomas S; Buckley, Patrick R; Benett, William J; Loge, Jeffrey M; Hartman, Jonathan; Maitland, Duncan J

    2007-09-01

    An electromechanical microactuator comprised of shape memory polymer (SMP) and shape memory nickel-titanium alloy (nitinol) was developed and used in an endovascular thrombectomy device prototype. The microactuator maintains a straight rod shape until an applied current induces electro-resistive (Joule) heating, causing the microactuator to transform into a corkscrew shape. The straight-to-corkscrew transformation geometry was chosen to permit endovascular delivery through (straight form) and retrieval of (corkscrew form) a stroke-causing thrombus (blood clot) in the brain. Thermal imaging of the microactuator during actuation in air indicated that the steady-state temperature rise caused by Joule heating varied quadratically with applied current and that actuation occurred near the glass transition temperature of the SMP (86 degrees C). To demonstrate clinical application, the device was used to retrieve a blood clot in a water-filled silicone neurovascular model. Numerical modeling of the heat transfer to the surrounding blood and associated thermal effects on the adjacent artery potentially encountered during clinical use suggested that any thermal damage would likely be confined to localized areas where the microactuator was touching the artery wall. This shape memory mechanical thrombectomy device is a promising tool for treating ischemic stroke without the need for infusion of clot-dissolving drugs. PMID:17867358

  13. Analyzing the Energy and Power Consumption of Remote Memory Accesses in the OpenSHMEM Model

    SciTech Connect

    Jana, Siddhartha; Hernandez, Oscar R; Poole, Stephen W; Hsu, Chung-Hsing; Chapman, Barbara

    2014-01-01

    PGAS models like OpenSHMEM provide interfaces to explicitly initiate one-sided remote memory accesses among processes. In addition, the model also provides synchronizing barriers to ensure a consistent view of the distributed memory at different phases of an application. The incorrect use of such interfaces affects the scalability achievable while using a parallel programming model. This study aims at understanding the effects of these constructs on the energy and power consumption behavior of OpenSHMEM applications. Our experiments show that cost incurred in terms of the total energy and power consumed depends on multiple factors across the software and hardware stack. We conclude that there is a significant impact on the power consumed by the CPU and DRAM due to multiple factors including the design of the data transfer patterns within an application, the design of the communication protocols within a middleware, the architectural constraints laid by the interconnect solutions, and also the levels of memory hierarchy within a compute node. This work motivates treating energy and power consumption as important factors while designing compute solutions for current and future distributed systems.

  14. High performance of graphene oxide-doped silicon oxide-based resistance random access memory

    PubMed Central

    2013-01-01

    In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. PMID:24261454

  15. High performance of graphene oxide-doped silicon oxide-based resistance random access memory.

    PubMed

    Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M

    2013-01-01

    In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compared with single Zr:SiOx layer structure, Zr:SiOx/C:SiOx structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. PMID:24261454

  16. High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

    NASA Astrophysics Data System (ADS)

    Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2016-02-01

    Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

  17. High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

    PubMed Central

    Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2016-01-01

    Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices. PMID:26831222

  18. Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

    NASA Astrophysics Data System (ADS)

    Prócel, L. M.; Trojman, L.; Moreno, J.; Crupi, F.; Maccaronio, V.; Degraeve, R.; Goux, L.; Simoen, E.

    2013-08-01

    The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transport mechanism in HfO2-based resistive random access memories (ReRAM) with TiN(30 nm)HfO2(5 nm)Hf(10 nm)TiN(30 nm) stacks. Based on experimental I-V characteristics of bipolar HfO2-based ReRAM, we extracted QPC model parameters related to the conduction mechanism in several devices in order to make a statistical study. In addition, we investigated the temperature effect on the conduction mechanism and compared it with the QPC model. Based on these experimental results, we show that the QPC model agrees well with the conduction behavior of HfO2-based ReRAM memory cells.

  19. Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

    NASA Astrophysics Data System (ADS)

    Pei, Yan-Li; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa

    2008-04-01

    Tungsten nanodots (W-NDs) with an ultrahigh density of 1×1013/cm2 and a small size of around of 1.5-2 nm were successfully formed by self-assembled nanodot deposition (SAND). A metal-oxide-semiconductor (MOS) memory device was also fabricated with a W-ND layer placed between tunneling SiO2 and block SiO2. Using this device, the effects of annealing on the capacitance characteristics were investigated in detail. After 900 °C post deposition annealing (PDA), an extremely large memory window of about 9.2 V was obtained, indicating that the device is a strong contender for future nonvolatile memory (NVM) applications. The program/erase speed and retention characteristics were also evaluated. The oxidation of tungsten by oxygen from the cosputtered silicon oxide was confirmed by X-ray photoelectron spectroscopy (XPS) measurement. It is considered to degrade the retention characteristics of MOS memory devices.

  20. PANATIKI: a network access control implementation based on PANA for IoT devices.

    PubMed

    Moreno Sanchez, Pedro; Marin Lopez, Rafa; Gomez Skarmeta, Antonio F

    2013-01-01

    Internet of Things (IoT) networks are the pillar of recent novel scenarios, such as smart cities or e-healthcare applications. Among other challenges, these networks cover the deployment and interaction of small devices with constrained capabilities and Internet protocol (IP)-based networking connectivity. These constrained devices usually require connection to the Internet to exchange information (e.g., management or sensing data) or access network services. However, only authenticated and authorized devices can, in general, establish this connection. The so-called authentication, authorization and accounting (AAA) services are in charge of performing these tasks on the Internet. Thus, it is necessary to deploy protocols that allow constrained devices to verify their credentials against AAA infrastructures. The Protocol for Carrying Authentication for Network Access (PANA) has been standardized by the Internet engineering task force (IETF) to carry the Extensible Authentication Protocol (EAP), which provides flexible authentication upon the presence of AAA. To the best of our knowledge, this paper is the first deep study of the feasibility of EAP/PANA for network access control in constrained devices. We provide light-weight versions and implementations of these protocols to fit them into constrained devices. These versions have been designed to reduce the impact in standard specifications. The goal of this work is two-fold: (1) to demonstrate the feasibility of EAP/PANA in IoT devices; (2) to provide the scientific community with the first light-weight interoperable implementation of EAP/PANA for constrained devices in the Contiki operating system (Contiki OS), called PANATIKI. The paper also shows a testbed, simulations and experimental results obtained from real and simulated constrained devices. PMID:24189332

  1. PANATIKI: A Network Access Control Implementation Based on PANA for IoT Devices

    PubMed Central

    Sanchez, Pedro Moreno; Lopez, Rafa Marin; Gomez Skarmeta, Antonio F.

    2013-01-01

    Internet of Things (IoT) networks are the pillar of recent novel scenarios, such as smart cities or e-healthcare applications. Among other challenges, these networks cover the deployment and interaction of small devices with constrained capabilities and Internet protocol (IP)-based networking connectivity. These constrained devices usually require connection to the Internet to exchange information (e.g., management or sensing data) or access network services. However, only authenticated and authorized devices can, in general, establish this connection. The so-called authentication, authorization and accounting (AAA) services are in charge of performing these tasks on the Internet. Thus, it is necessary to deploy protocols that allow constrained devices to verify their credentials against AAA infrastructures. The Protocol for Carrying Authentication for Network Access (PANA) has been standardized by the Internet engineering task force (IETF) to carry the Extensible Authentication Protocol (EAP), which provides flexible authentication upon the presence of AAA. To the best of our knowledge, this paper is the first deep study of the feasibility of EAP/PANA for network access control in constrained devices. We provide light-weight versions and implementations of these protocols to fit them into constrained devices. These versions have been designed to reduce the impact in standard specifications. The goal of this work is two-fold: (1) to demonstrate the feasibility of EAP/PANA in IoT devices; (2) to provide the scientific community with the first light-weight interoperable implementation of EAP/PANA for constrained devices in the Contiki operating system (Contiki OS), called PANATIKI. The paper also shows a testbed, simulations and experimental results obtained from real and simulated constrained devices. PMID:24189332

  2. Self-activated mesh device using shape memory alloy for periosteal expansion osteogenesis.

    PubMed

    Yamauchi, Kensuke; Takahashi, Tetsu; Tanaka, Kenko; Nogami, Shinnosuke; Kaneuji, Takeshi; Kanetaka, Hiroyasu; Miyazaki, Toshiki; Lethaus, Bernd; Kessler, Peter

    2013-07-01

    The present study evaluated the use of this self-activated shape memory alloy (SMA) device, with a focus on its effects in the region under the periosteum. Twelve Japanese white rabbits were used in this study. The device was inserted under the periosteum at the forehead. In the experimental group, the device was pushed, bent, and attached to the bone surface and fixed with a titanium screw. In control group, the device was only inserted under the periosteum. After 14 days, the screw was removed and the mesh was activated in the experimental group. Rabbits were sacrificed 5 and 8 weeks after the operation and newly formed bone was histologically and radiographically evaluated. The quantitative data by the area and the occupation of newly formed bone indicated that the experimental group had a higher volume of new bone than the control group at each consolidation period. Histologically, some newly formed bone was observed and most of the subperiosteal space underneath the device was filled with fibrous tissue, and a thin layer of immature bone was observed in the control group. In the experimental group, multiple dome-shaped bones, outlined by thin and scattered trabeculae, were clearly observed under the SMA mesh device. The use of self-activated devices for the periosteal expansion technique may make it possible to avoid donor site morbidity, trans-skin activation rods, any bone-cutting procedure, and the following intermittent activation procedure. PMID:23359561

  3. Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites.

    PubMed

    Sun, Yanmei; Lu, Junguo; Ai, Chunpeng; Wen, Dianzhong

    2016-04-20

    Nonvolatile memory devices based on active layers of poly(vinyl alcohol) (PVA) + graphene oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA + GO/Al device was compared with that of the ITO/PVA/Al device. The ITO/PVA + GO/Al device showed excellent performance compared to the ITO/PVA/Al device (an ON/OFF resistance ratio of 1.2 × 10(2) at 1 V, VSET ∼ -1.45 V and VRESET ∼ 3.6 V), with a higher ON/OFF resistance ratio of 3 × 10(4) at 1 V and lower operating voltages of VSET ∼ -0.75 V and VRESET ∼ 3.0 V. Furthermore, endurance performance and write-read-erase-reread (WRER) cycle tests manifest that the presence of GO in ITO/PVA + GO/Al devices makes them have better stability and repeatability. The results show that the performance of hybrid devices can be effectively enhanced by the introduction of GO into the PVA matrix. PMID:27056548

  4. Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

    NASA Astrophysics Data System (ADS)

    Xiao, Yao; Guo, Hong-Xia; Zhang, Feng-Qi; Zhao, Wen; Wang, Yan-Ping; Zhang, Ke-Ying; Ding, Li-Li; Fan, Xue; Luo, Yin-Hong; Wang, Yuan-Ming

    2014-11-01

    Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

  5. 46 CFR 4.06-15 - Accessibility of chemical testing devices.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... sufficient number of urine-specimen collection and shipping kits meeting the requirements of 49 CFR part 40... 46 Shipping 1 2012-10-01 2012-10-01 false Accessibility of chemical testing devices. 4.06-15... MARINE CASUALTIES AND INVESTIGATIONS Mandatory Chemical Testing Following Serious Marine...

  6. 46 CFR 4.06-15 - Accessibility of chemical testing devices.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... sufficient number of urine-specimen collection and shipping kits meeting the requirements of 49 CFR part 40... 46 Shipping 1 2011-10-01 2011-10-01 false Accessibility of chemical testing devices. 4.06-15... MARINE CASUALTIES AND INVESTIGATIONS Mandatory Chemical Testing Following Serious Marine...

  7. 46 CFR 4.06-15 - Accessibility of chemical testing devices.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... sufficient number of urine-specimen collection and shipping kits meeting the requirements of 49 CFR part 40... 46 Shipping 1 2014-10-01 2014-10-01 false Accessibility of chemical testing devices. 4.06-15... MARINE CASUALTIES AND INVESTIGATIONS Mandatory Chemical Testing Following Serious Marine...

  8. 46 CFR 4.06-15 - Accessibility of chemical testing devices.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... sufficient number of urine-specimen collection and shipping kits meeting the requirements of 49 CFR part 40... 46 Shipping 1 2013-10-01 2013-10-01 false Accessibility of chemical testing devices. 4.06-15... MARINE CASUALTIES AND INVESTIGATIONS Mandatory Chemical Testing Following Serious Marine...

  9. 46 CFR 4.06-15 - Accessibility of chemical testing devices.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... sufficient number of urine-specimen collection and shipping kits meeting the requirements of 49 CFR part 40... 46 Shipping 1 2010-10-01 2010-10-01 false Accessibility of chemical testing devices. 4.06-15... MARINE CASUALTIES AND INVESTIGATIONS Mandatory Chemical Testing Following Serious Marine...

  10. Preservice Teachers' Experiences on Accessing Course Materials Using Mobile Devices

    ERIC Educational Resources Information Center

    Unal, Zafer; Unal, Aslihan

    2014-01-01

    This study investigates and reports the first time experiences of mobile device users accessing the course materials on both the web and mobile version of course management system (Web Moodle & Mobile Moodle) during an online course offered at the University of South Florida, St. Petersburg College of Education.

  11. Investigation of electromigration in In2Se3 nanowire for phase change memory devices

    NASA Astrophysics Data System (ADS)

    Kang, Daegun; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M.; Lee, Jeong-Soo

    2013-12-01

    The decomposition of In2Se3 nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24-0.38 MA/cm2 and 5.3-6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In2Se3 nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities.

  12. Daily access to sucrose impairs aspects of spatial memory tasks reliant on pattern separation and neural proliferation in rats.

    PubMed

    Reichelt, Amy C; Morris, Margaret J; Westbrook, Reginald Frederick

    2016-07-01

    High sugar diets reduce hippocampal neurogenesis, which is required for minimizing interference between memories, a process that involves "pattern separation." We provided rats with 2 h daily access to a sucrose solution for 28 d and assessed their performance on a spatial memory task. Sucrose consuming rats discriminated between objects in novel and familiar locations when there was a large spatial separation between the objects, but not when the separation was smaller. Neuroproliferation markers in the dentate gyrus of the sucrose-consuming rats were reduced relative to controls. Thus, sucrose consumption impaired aspects of spatial memory and reduced hippocampal neuroproliferation. PMID:27317199

  13. Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

    NASA Astrophysics Data System (ADS)

    Huh, In; Cheon, Woo Young; Choi, Woo Young

    2016-04-01

    A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

  14. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device.

    PubMed

    Seo, Kyungah; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Sangsu; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang

    2011-06-24

    We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device. PMID:21572200

  15. Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

    NASA Astrophysics Data System (ADS)

    Sun, B.; Jia, X. J.; Wu, J. H.; Chen, P.

    2015-12-01

    In this work, the CuWO4 film based resistive switching memory capacitors were fabricated with hydrothermal and spin-coating approaches. The device exhibits excellent photo-electron double controlled resistive switching memory characteristics with OFF/ON resistance ratio of ~103. It is believed that the interface of CuWO4 and FTO is responsible for such a switching behavior and it can be described by the Schottky-like barriers model. This study is useful for exploring the multifunctional materials and their applications in photo-electron double controlled nonvolatile memory devices.

  16. Comparison of single event upset rates for microelectronic memory devices during interplanetary solar particle events

    NASA Technical Reports Server (NTRS)

    Mckerracher, P. L.; Kinnison, J. D.; Maurer, R. H.

    1993-01-01

    Variability in the methods and models used for single event upset calculations in microelectronic memory devices can lead to a range of possible upset rates. Using heavy ion and proton data for selected DRAM and SRAM memories, we have calculated an array of upset rates in order to compare the Adams worst case interplanetary solar flare model to a model proposed by scientists at the Jet Propulsion Laboratory. In addition, methods of upset rate calculation are compared: the Cosmic Ray Effects on Microelectronics CREME code and a Monte Carlo algorithm developed at the Applied Physics Laboratory. The results show that use of a more realistic, although still conservative, model of the space environment can have significant cost saving benefits.

  17. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K.

    2016-06-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data.

  18. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory.

    PubMed

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K

    2016-01-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~10(3)), low threshold voltage of switching (~3.5 V) and large cycling endurance (>10(3)). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data. PMID:27245099

  19. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

    PubMed Central

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K.

    2016-01-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data. PMID:27245099

  20. Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

    NASA Astrophysics Data System (ADS)

    Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng

    2015-01-01

    A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices. Observing the resistive switching mechanism exhibited by all the samples suggested that Cu conductive filaments formed and ruptured during the set/reset process. The experimental results indicated that the endurance property failure that occurred was related to the joule heating effect. Moreover, the endurance switching cycle increased as the Cu concentration decreased. In high-temperature tests, the samples demonstrated that the operating (set/reset) voltages decreased as the temperature increased, and an Arrhenius plot was used to calculate the activation energy of the set/reset process. In addition, the samples demonstrated stable data retention properties when baked at 85 °C, but the samples with low Cu concentrations exhibited short retention times in the low-resistance state (LRS) during 125 °C tests. Therefore, Cu concentration is a crucial factor in the trade-off between the endurance and retention properties; furthermore, the Cu concentration can be easily modulated using this CS technique.

  1. False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

    NASA Astrophysics Data System (ADS)

    Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

    2013-04-01

    Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

  2. Joule heating effect in nonpolar and bipolar resistive random access memory

    NASA Astrophysics Data System (ADS)

    Uenuma, Mutsunori; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2015-08-01

    The position of the conductive filament (CF) and the heating behaviour during a switching process in nonpolar and bipolar resistive random access memories (ReRAMs) were evaluated using thermal analysis. The position of the CF was clearly observed from Joule heating at the surface of the electrode on the CF. The position of the CF did not change during the switching cycle, except in the case of an unstable CF. In the nonpolar ReRAM, spike-shaped temperature increments were observed during both the forming and the set processes because of the overshoot current. However, the behaviour of the temperature increment in the bipolar ReRAM was virtually consistent with the profile of the electrical power.

  3. Simulation study on heat conduction of a nanoscale phase-change random access memory cell.

    PubMed

    Kim, Junho; Song, Ki-Bong

    2006-11-01

    We have investigated heat transfer characteristics of a nano-scale phase-change random access memory (PRAM) cell using finite element method (FEM) simulation. Our PRAM cell is based on ternary chalcogenide alloy, Ge2Sb2Te5 (GST), which is used as a recording layer. For contact area of 100 x 100 nm2, simulations of crystallization and amorphization processes were carried out. Physical quantities such as electric conductivity, thermal conductivity, and specific heat were treated as temperature-dependent parameters. Through many simulations, it is concluded that one can reduce set current by decreasing both electric conductivities of amorphous GST and crystalline GST, and in addition to these conditions by decreasing electric conductivity of molten GST one can also reduce reset current significantly. PMID:17252792

  4. Characteristics and mechanism study of cerium oxide based random access memories

    SciTech Connect

    Hsieh, Cheng-Chih; Roy, Anupam; Rai, Amritesh; Chang, Yao-Feng; Banerjee, Sanjay K.

    2015-04-27

    In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeO{sub x} is considered as a relatively new material to other dielectrics. Since research on CeO{sub x} based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeO{sub x} RRAMs and also compare electrical performance of Al/CeO{sub x}/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.

  5. Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory.

    PubMed

    Qin, Shengjun; Liu, Zhan; Zhang, Guo; Zhang, Jinyu; Sun, Yaping; Wu, Huaqiang; Qian, He; Yu, Zhiping

    2015-04-14

    The growth dynamics for metallic filaments in conductive-bridge resistive-switching random access memory (CBRAM) are studied using the kinetic Monte Carlo (KMC) method. The physical process at the atomistic level is revealed in explaining the experimental observation that filament growth can originate at either the cathode or the anode. The statistical nature of the filament growth is best shown by the random topography of dendrite-like conductive paths obtained. Critical material properties, such as charged-particle mobility in the switching layer of a solid electrolyte or a dielectric, are mapped to KMC model parameters through activation energy, etc. The accuracy of the simulator is established by the good agreement between the simulated forming time and the measured data. PMID:25750983

  6. All-solution-processed nonvolatile flexible nano-floating gate memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Chaewon; Song, Ji-Min; Lee, Jang-Sik; Lee, Mi Jung

    2014-01-01

    Organic semiconductors have great potential for future electronic applications owing to their inherent flexibility, low cost, light weight and ability to easily cover large areas. However, all of these advantageous material properties can only be harnessed if simple, cheap and low-temperature fabrication processes, which exclude the need for vacuum deposition and are compatible with flexible plastic substrates, are employed. There are a few solution-based techniques such as spin-coating and inkjet printing that meet the above criteria. In this paper, we describe a novel all-solution-processed nonvolatile memory device fabricated on a flexible plastic substrate. The source, drain and gate electrodes were printed using an inkjet printer with a conducting organic solution, while the semiconducting layer was spin-coated with an n-type polymer. The charge-trapping layer was composed of spin-coated reduced graphene oxide (rGO), which was prepared in the form of a solution using Hummer’s method. The fabricated device was characterized in order to confirm the memory characteristics. Device parameters such as threshold voltage shift, retention/endurance characteristics, mechanical robustness and reliability upon bending were also analyzed.

  7. Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

    NASA Astrophysics Data System (ADS)

    Nejm, Razan R.; Ayesh, Ahmad I.; Zeze, Dagou A.; Sleiman, Adam; Mabrook, Mohammed F.; Al-Ghaferi, Amal; Hussein, Mousa

    2015-08-01

    We report on the fabrication and characterization of hybrid-organic memory devices based on gold (Au) nanoparticles that utilize metal-insulator-semiconductor structure. Au nanoparticles were produced by sputtering and inert-gas condensation inside an ultrahigh-vacuum compatible system. The nanoparticles were self-assembled on a silicon dioxide (SiO2)/silicon (Si) substrate, then coated with a poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes were deposited by thermal evaporation on the Si substrate and the PMMA layer to create a capacitor. The nanoparticles worked as charge storage elements, while the PMMA is the capacitor insulator. The capacitance-voltage ( C- V) characteristics of the fabricated devices showed a clockwise hysteresis with a memory window of 3.4 V, indicative of electron injection from the top Al electrode through the PMMA layer into Au nanoparticles. Charge retention was measured at the stress voltage, demonstrating that the devices retain 94% of the charge stored after 3 h of continuous testing.

  8. GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Rao Gollu, Sankara; Sharma, Ramakant; Halder, Nripendra. N.; Biswas, Pranab; Banerji, P.; Gupta, D.

    2013-08-01

    Ultrathin InP passivated GaAs non-volatile memory devices were fabricated with chemically synthesized 5 nm ZnO quantum dots embedded into ZrO2 high-k oxide matrix deposited through metal organic chemical vapor deposition. In these memory devices, the memory window was found to be 6.10 V and the obtained charge loss was only 15.20% after 105 s. The superior retention characteristics and a wide memory window are achieved due to presence of ZnO quantum dots between tunneling and control oxide layers. Room temperature Coulomb blockade effect was found in these devices and it was ascertained to be the main reason for low leakage. Electronic band diagram with program and erase operations were described on the basis of electrical characterizations.

  9. Novel junctionless silicon-oxide-nitride-oxide-silicon memory devices with field-enhanced poly-Si nanowire structure

    NASA Astrophysics Data System (ADS)

    Chou, Chia-Hsin; Chan, Wei-Sheng; Wu, Chun-Yu; Lee, I.-Che; Liao, Ta-Chuan; Wang, Chao-Lung; Wang, Kuang-Yu; Cheng, Huang-Chung

    2015-08-01

    In this work, a novel gate-all-around (GAA) low-temperature poly-Si (LTPS) junctionless (JL) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory device with a field-enhanced nanowire (NW) structure has been proposed to improve the programing/erasing (P/E) performance. Each nanowire has three sharp corners fabricated by a sidewall spacer formation technique to obtain high local electrical fields. Owing to the higher carrier concentration in the channel and the high local electrical field from the three sharp corners, such a JL SONOS memory device exhibits a significantly enhanced P/E speed, a larger memory window, and better data retention properties than a conventional inversion mode NW-channel memory device.

  10. Catheter Securement Systems for Peripherally Inserted and Nontunneled Central Vascular Access Devices: Clinical Evaluation of a Novel Sutureless Device.

    PubMed

    Krenik, Karen M; Smith, Graham E; Bernatchez, Stéphanie F

    2016-01-01

    Sutureless catheter securement systems are intended to eliminate risks associated with sutures. The clinical acceptability of a novel system was investigated compared with the current method of securement for peripherally inserted central catheters (19 facilities using StatLock or sutures) or nontunneled central vascular access devices (3 facilities using StatLock or sutures or HubGuard + Sorbaview Shield). More than 94% of respondents rated the novel system as same, better, or much better than their current product. More than 82% of respondents were willing to replace their current system with the new one. PMID:27379679

  11. Does the mismatch negativity operate on a consciously accessible memory trace?

    PubMed

    Dykstra, Andrew R; Gutschalk, Alexander

    2015-11-01

    The extent to which the contents of short-term memory are consciously accessible is a fundamental question of cognitive science. In audition, short-term memory is often studied via the mismatch negativity (MMN), a change-related component of the auditory evoked response that is elicited by violations of otherwise regular stimulus sequences. The prevailing functional view of the MMN is that it operates on preattentive and even preconscious stimulus representations. We directly examined the preconscious notion of the MMN using informational masking and magnetoencephalography. Spectrally isolated and otherwise suprathreshold auditory oddball sequences were occasionally random rendered inaudible by embedding them in random multitone masker "clouds." Despite identical stimulation/task contexts and a clear representation of all stimuli in auditory cortex, MMN was only observed when the preceding regularity (that is, the standard stream) was consciously perceived. The results call into question the preconscious interpretation of MMN and raise the possibility that it might index partial awareness in the absence of overt behavior. PMID:26702432

  12. Does the mismatch negativity operate on a consciously accessible memory trace?

    PubMed Central

    Dykstra, Andrew R.; Gutschalk, Alexander

    2015-01-01

    The extent to which the contents of short-term memory are consciously accessible is a fundamental question of cognitive science. In audition, short-term memory is often studied via the mismatch negativity (MMN), a change-related component of the auditory evoked response that is elicited by violations of otherwise regular stimulus sequences. The prevailing functional view of the MMN is that it operates on preattentive and even preconscious stimulus representations. We directly examined the preconscious notion of the MMN using informational masking and magnetoencephalography. Spectrally isolated and otherwise suprathreshold auditory oddball sequences were occasionally random rendered inaudible by embedding them in random multitone masker “clouds.” Despite identical stimulation/task contexts and a clear representation of all stimuli in auditory cortex, MMN was only observed when the preceding regularity (that is, the standard stream) was consciously perceived. The results call into question the preconscious interpretation of MMN and raise the possibility that it might index partial awareness in the absence of overt behavior. PMID:26702432

  13. An annulus fibrosus closure device based on a biodegradable shape-memory polymer network.

    PubMed

    Sharifi, Shahriar; van Kooten, Theo G; Kranenburg, Hendrik-Jan C; Meij, Björn P; Behl, Marc; Lendlein, Andreas; Grijpma, Dirk W

    2013-11-01

    Injuries to the intervertebral disc caused by degeneration or trauma often lead to tearing of the annulus fibrosus (AF) and extrusion of the nucleus pulposus (NP). This can compress nerves and cause lower back pain. In this study, the characteristics of poly(D,L-lactide-co-trimethylene carbonate) networks with shape-memory properties have been evaluated in order to prepare biodegradable AF closure devices that can be implanted minimally invasively. Four different macromers with (D,L-lactide) to trimethylene carbonate (DLLA:TMC) molar ratios of 80:20, 70:30, 60:40 and 40:60 with terminal methacrylate groups and molecular weights of approximately 30 kg mol(-1) were used to prepare the networks by photo-crosslinking. The mechanical properties of the samples and their shape-memory properties were determined at temperatures of 0 °C and 40 °C by tensile tests- and cyclic, thermo-mechanical measurements. At 40 °C all networks showed rubber-like behavior and were flexible with elastic modulus values of 1.7-2.5 MPa, which is in the range of the modulus values of human annulus fibrosus tissue. The shape-memory characteristics of the networks were excellent with values of the shape-fixity and the shape-recovery ratio higher than 98 and 95%, respectively. The switching temperatures were between 10 and 39 °C. In vitro culture and qualitative immunocytochemistry of human annulus fibrosus cells on shape-memory films with DLLA:TMC molar ratios of 60:40 showed very good ability of the networks to support the adhesion and growth of human AF cells. When the polymer network films were coated by adsorption of fibronectin, cell attachment, cell spreading, and extracellular matrix production was further improved. Annulus fibrosus closure devices were prepared from these AF cell-compatible materials by photo-polymerizing the reactive precursors in a mold. Insertion of the multifunctional implant in the disc of a cadaveric canine spine showed that these shape-memory devices could be

  14. Context controls access to working and reference memory in the pigeon (Columba livia).

    PubMed

    Roberts, William A; Macpherson, Krista; Strang, Caroline

    2016-01-01

    The interaction between working and reference memory systems was examined under conditions in which salient contextual cues were presented during memory retrieval. Ambient colored lights (red or green) bathed the operant chamber during the presentation of comparison stimuli in delayed matching-to-sample training (working memory) and during the presentation of the comparison stimuli as S+ and S- cues in discrimination training (reference memory). Strong competition between memory systems appeared when the same contextual cue appeared during working and reference memory training. When different contextual cues were used, however, working memory was completely protected from reference memory interference. PMID:26781056

  15. Femtosecond-laser direct writing in polymers and potential applications in microfluidics and memory devices

    NASA Astrophysics Data System (ADS)

    Kallepalli, Lakshmi Narayana Deepak; Soma, Venugopal Rao; Desai, Narayana Rao

    2012-07-01

    We have investigated femtosecond-laser-induced microstructures (on the surface and within the bulk), gratings, and craters in four different polymers: polymethyl methacrylate, polydimethylsiloxane, polystyrene, and polyvinyl alcohol. The structures were achieved using a Ti:sapphire laser delivering 100-fs pulses at 800 nm with a repetition rate of 1 kHz and a maximum pulse energy of 1 mJ. Local chemical modifications leading to the formation of optical centers and peroxide radicals were studied using ultraviolet-visible absorption and emission, confocal micro-Raman and electron spin resonance spectroscopic techniques. Potential applications of these structures in microfluidics, waveguides, and memory-based devices are demonstrated.

  16. Wearable non-volatile memory devices based on topological insulator Bi2Se3/Pt fibers

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoyan; Wen, Fusheng; Xiang, Jianyong; Wang, Xiaochen; Wang, Limin; Hu, Wentao; Liu, Zhongyuan

    2015-09-01

    Pt fibers (15 μm) were coated with topological insulator Bi2Se3 nanoplates via a single mode microwave-assisted synthesis technique. With the Bi2Se3/Pt fibers, flexible memory devices were facilely assembled, and they were demonstrated to exhibit rewritable nonvolatile resistive switching characteristics of low switching voltage (-1.2 V and +0.7 V), high ON/OFF current ratio (106), and good retention (4500 s), showing the potential application in data storage. The resistive switching mechanism was analyzed on the bases of formation and rupture of conductive filaments.

  17. Inductively heated shape memory polymer for the magnetic actuation of medical devices.

    PubMed

    Buckley, Patrick R; McKinley, Gareth H; Wilson, Thomas S; Small, Ward; Benett, William J; Bearinger, Jane P; McElfresh, Michael W; Maitland, Duncan J

    2006-10-01

    Presently, there is interest in making medical devices such as expandable stents and intravascular microactuators from shape memory polymer (SMP). One of the key challenges in realizing SMP medical devices is the implementation of a safe and effective method of thermally actuating various device geometries in vivo. A novel scheme of actuation by Curie-thermoregulated inductive heating is presented. Prototype medical devices made from SMP loaded with nickel zinc ferrite ferromagnetic particles were actuated in air by applying an alternating magnetic field to induce heating. Dynamic mechanical thermal analysis was performed on both the particle-loaded and neat SMP materials to assess the impact of the ferrite particles on the mechanical properties of the samples. Calorimetry was used to quantify the rate of heat generation as a function of particle size and volumetric loading of ferrite particles in the SMP. These tests demonstrated the feasibility of SMP actuation by inductive heating. Rapid and uniform heating was achieved in complex device geometries and particle loading up to 10% volume content did not interfere with the shape recovery of the SMP. PMID:17019872

  18. Inductively Heated Shape Memory Polymer for the Magnetic Actuation of Medical Devices

    SciTech Connect

    Buckley, P; Mckinley, G; Wilson, T; Small, W; Benett, W; Bearinger, J; McElfresh, M; Maitland, D

    2005-09-06

    Presently there is interest in making medical devices such as expandable stents and intravascular microactuators from shape memory polymer (SMP). One of the key challenges in realizing SMP medical devices is the implementation of a safe and effective method of thermally actuating various device geometries in vivo. A novel scheme of actuation by Curie-thermoregulated inductive heating is presented. Prototype medical devices made from SMP loaded with Nickel Zinc ferrite ferromagnetic particles were actuated in air by applying an alternating magnetic field to induce heating. Dynamic mechanical thermal analysis was performed on both the particle-loaded and neat SMP materials to assess the impact of the ferrite particles on the mechanical properties of the samples. Calorimetry was used to quantify the rate of heat generation as a function of particle size and volumetric loading of ferrite particles in the SMP. These tests demonstrated the feasibility of SMP actuation by inductive heating. Rapid and uniform heating was achieved in complex device geometries and particle loading up to 10% volume content did not interfere with the shape recovery of the SMP.

  19. Memory.

    ERIC Educational Resources Information Center

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  20. Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

    NASA Technical Reports Server (NTRS)

    Sharma, Ashok K.; Teverovsky, Alexander

    2001-01-01

    Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

  1. Peripheral Insertion of a Central Venous Access Device Under Fluoroscopic Guidance Using a Peripherally Accessed System (PAS) Port in the Forearm

    SciTech Connect

    Hata, Yasuhiro; Morita, Sojiro; Morita, Yoshitaka; Awatani, Toshihide; Takasaki, Motohiro; Horimi, Tadashi; Ozawa, Zen

    1998-05-15

    Purpose: We describe the technique, efficacy, and complications of fluoroscopy-guided implantation of a central venous access device using a peripherally accessed system (PAS) port via the forearm. Methods: Beginning in July 1994, 105 central venous access devices were implanted in 104 patients for the long-term infusion of antibiotics or antineoplasmic agents, blood products, or parenteral nutrition. The devices was inserted under fluoroscopic guidance with real-time venography from a peripheral route. Results: All ports were successfully implanted. There were no procedure-related complications. No thrombosis or local infection was observed; however, in six patients catheter-related phlebitis occurred. Conclusion: Fluoroscopy-guided implantation of a central venous access device using a PAS port via the forearm is safe and efficacious, and injection of contrast medium through a peripheral IV catheter before introduction of the catheter helps to avoid catheter-related phlebitis.

  2. A complementary switching mechanism for organic memory devices to regulate the conductance of binary states

    NASA Astrophysics Data System (ADS)

    Vyas, Giriraj; Dagar, Parveen; Sahu, Satyajit

    2016-06-01

    We have fabricated an organic non-volatile memory device wherein the ON/OFF current ratio has been controlled by varying the concentration of a small organic molecule, 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ), in an insulating matrix of a polymer Poly(4-vinylphenol) (PVP). A maximum ON-OFF ratio of 106 is obtained when the concentration of DDQ is half or 10 wt. % of PVP. In this process, the switching direction for the devices has also been altered, indicating the disparity in conduction mechanism. Conduction due to metal filament formation through the active material and the voltage dependent conformational change of the organic molecule seem to be the motivation behind the gradual change in the switching direction.

  3. The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices

    NASA Astrophysics Data System (ADS)

    Zhang, F.; Li, X. M.; Gao, X. D.; Wu, L.; Cao, X.; Liu, X. J.; Yang, R.

    2011-05-01

    Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS) was observed in Pt/TiO2/Pt memory devices. The URS and BRS of this device exhibited different low resistance states but shared the same high resistance state. The conduction mechanisms of low resistance states in URS and BRS are Ohmic conduction and electrons tunneling, respectively, while the high resistance state is controlled by Schottky barrier formed at the top interface of Pt/TiO2. The temperature dependence of resistance states indicates Magnéli phase filaments formed in URS. A unified model was then proposed to demonstrate the unification of filament and interfacial switching mechanisms.

  4. Three-Year-Old Children Can Access Their Own Memory to Guide Responses on a Visual Matching Task

    ERIC Educational Resources Information Center

    Balcomb, Frances K.; Gerken, LouAnn

    2008-01-01

    Many models of learning rely on accessing internal knowledge states. Yet, although infants and young children are recognized to be proficient learners, the ability to act on metacognitive information is not thought to develop until early school years. In the experiments reported here, 3.5-year-olds demonstrated memory-monitoring skills by…

  5. Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

    PubMed Central

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-01-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

  6. Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing.

    PubMed

    Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

    2014-01-01

    Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 10(5), which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

  7. Scalability of valence change memory: From devices to tip-induced filaments

    NASA Astrophysics Data System (ADS)

    Celano, U.; Fantini, A.; Degraeve, R.; Jurczak, M.; Goux, L.; Vandervorst, W.

    2016-08-01

    Since the early days of the investigation on resistive switching (RS), the independence of the ON-state resistance with actual cell area has been a trademark of filamentary-switching. However, with the continuous downscaling of the memory cell down to 10 x 10 nm2 and below, the persistence of this phenomena raises intriguing questions on the conductive filaments (CFs) and its dimensions. Particularly, the cell functionality demonstrated at relatively high switching current (> 100 μA) implies a high current density (> 106 A/cm2) inside a CF supposedly confined in few hundreds on nm3. We previously demonstrated a methodology for the direct observation of CFs in integrated devices namely scalpel SPM, which overcomes most of the characterization challenges imposed by the device structure and the small CF lateral dimensions. In this letter, we use scalpel SPM to clarify the scaling potential of HfO2-based valence change memory (VCM) by characterization of CFs programmed at relatively high switching current and by AFM tip-induced RS experiments. Besides the demonstration of a remarkable scaling potential for the VCM technology, our results are also used to clarify the present understanding on the AFM-based experiments.

  8. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    PubMed Central

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-01-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V−1s−1, large memory window (∼16 V), low read voltages (∼−1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices. PMID:24912617

  9. 78 FR 951 - Accessible Medical Device Labeling in a Standard Content and Format Public Workshop; Request for...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-07

    ... HUMAN SERVICES Food and Drug Administration Accessible Medical Device Labeling in a Standard Content and... content and format for medical device labeling and the use of a repository containing medical device... session. Standard content and format of full labeling and a shortened version of labeling will...

  10. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

    NASA Astrophysics Data System (ADS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-03-01

    This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO2 superlattice-based memory devices with an improved memory window and retention properties. The SiO2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  11. Initial human experience with the XIENCE side-branch access device.

    PubMed

    Rizik, David G; Samuels, Bruce; Hatten, Thomas R; Gil, Robert J

    2012-06-01

    The everolimus-eluting XIENCE side-branch access (SBA) stent has been the focus of numerous recent publications. Most of the information available on this device comes from the preclinical studies performed in ovine models as well as perfused synthetic heart models. It has now become available in Europe as part of a limited test launch. Delivered via a low-profile, dual-lumen, single-tip catheter, a single inflation device deploys the stent in the main branch and expands a portal opening into the ostium of the side branch to allow for scaffolding and entry into the side branch. This case report describes the first-in-man experience with this novel device. PMID:22684387

  12. Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS{sub 2} quantum dot-polymethylmethacrylate nanocomposites

    SciTech Connect

    Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

    2014-12-08

    Nonvolatile memory devices based on CuInS{sub 2} (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10{sup −10} was maintained for 8 × 10{sup 3} cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10{sup 6} cycles converged to 2.40 × 10{sup −10}, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.

  13. Overview of emerging nonvolatile memory technologies

    PubMed Central

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  14. Overview of emerging nonvolatile memory technologies.

    PubMed

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  15. Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

    NASA Astrophysics Data System (ADS)

    Yang, Xiang; Lu, Yang; Lee, Jongho; Chen, I.-Wei

    2016-01-01

    Tuning low resistance state is crucial for resistance random access memory (RRAM) that aims to achieve optimal read margin and design flexibility. By back-to-back stacking two nanometallic bipolar RRAMs with different thickness into a complementary structure, we have found that its low resistance can be reliably tuned over several orders of magnitude. Such high tunability originates from the exponential thickness dependence of the high resistance state of nanometallic RRAM, in which electron wave localization in a random network gives rise to the unique scaling behavior. The complementary nanometallic RRAM provides electroforming-free, multi-resistance-state, sub-100 ns switching capability with advantageous characteristics for memory arrays.

  16. Resistive Switching in Al/Al2O3/TiO2/Al/PES Flexible Device for Nonvolatile Memory Application.

    PubMed

    Lin, Chun-Chieh; Lee, Wang-Ying; Lee, Han-Tang

    2016-05-01

    Resistive switching memory devices with superior properties are possibly used in next-generation nonvolatile memory to replace the flash memory. In addition, flexible electronics has also attracted much attention because of its light-weight and flexibility. Therefore, an Al/Al2O3/TiO2/Al/PES flexible resistive switching memory is employed in this study. The resistive switching characteristics and stability of the flexible device are improved by inserting the Al2O3 film. The resistive switching of the flexible device can be repeated over hundreds of times after the bending test. A possible resistive switching model of the flexible device is also proposed. In addition, the non-volatility of the flexible device is demonstrated. Based on our research results, the proposed Al2O3/TiO2-based resistive switching memory is possibly used in next-generation flexible electronics and nonvolatile memory applications. PMID:27483828

  17. (Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

    DOE PAGESBeta

    Gao, X.; Mamaluy, D.; Cyr, E. C.; Marinella, M. J.

    2016-05-10

    As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. In orderTo facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. Moreover, the model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device ismore » determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.« less

  18. Miniature micro-wire based optical fiber-field access device.

    PubMed

    Pevec, Simon; Donlagic, Denis

    2012-12-01

    This paper presents an optical fiber-field access device suitable for use in different in-line fiber-optics' systems and fiber-based photonics' components. The proposed device utilizes a thin silica micro-wire positioned in-between two lead-in single mode fibers. The thin micro-wire acts as a waveguide that allows for low-loss interconnection between both lead-in fibers, while providing interaction between the guided optical field and the surrounding medium or other photonic structures. The field interaction strength, total loss, and phase matching conditions can be partially controlled by device-design. The presented all-fiber device is miniature in size and utilizes an all-silica construction. It has mechanical properties suitable for handling and packaging without the need for additional mechanical support or reinforcements. The proposed device was produced using a micromachining method that utilizes selective etching of a purposely-produced phosphorus pentoxide-doped optical fiber. This method is simple, compatible with batch processes, and has good high-volume manufacturing potential. PMID:23262732

  19. Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

    NASA Astrophysics Data System (ADS)

    Yu, Muxi; Fang, Yichen; Wang, Zongwei; Pan, Yue; Li, Ming; Cai, Yimao; Huang, Ru

    2016-05-01

    In this paper, we propose a TaOx resistive switching random access memory (RRAM) device with operation-polarity-dependent self-selection effect by introducing highly doped silicon (Si) electrode, which is promising for large-scale integration. It is observed that with highly doped Si as the bottom electrode (BE), the RRAM devices show non-linear (>103) I-V characteristic during negative Forming/Set operation and linear behavior during positive Forming/Set operation. The underling mechanisms for the linear and non-linear behaviors at low resistance states of the proposed device are extensively investigated by varying operation modes, different metal electrodes, and Si doping type. Experimental data and theoretical analysis demonstrate that the operation-polarity-dependent self-selection effect in our devices originates from the Schottky barrier between the TaOx layer and the interfacial SiOx formed by reaction between highly doped Si BE and immigrated oxygen ions in the conductive filament area.

  20. Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation

    SciTech Connect

    Wang, Jer-Chyi Hsu, Chih-Hsien; Ye, Yu-Ren; Ai, Chi-Fong; Tsai, Wen-Fa

    2014-03-15

    Characteristics improvement of gadolinium oxide (Gd{sub x}O{sub y}) resistive random access memories (RRAMs) treated by hydrogen plasma immersion ion implantation (PIII) was investigated. With the hydrogen PIII treatment, the Gd{sub x}O{sub y} RRAMs exhibited low set/reset voltages and a high resistance ratio, which were attributed to the enhanced movement of oxygen ions within the Gd{sub x}O{sub y} films and the increased Schottky barrier height at Pt/Gd{sub x}O{sub y} interface, respectively. The resistive switching mechanism of Gd{sub x}O{sub y} RRAMs was dominated by Schottky emission, as proved by the area dependence of the resistance in the low resistance state. After the hydrogen PIII treatment, a retention time of more than 10{sup 4} s was achieved at an elevated measurement temperature. In addition, a stable cycling endurance with the resistance ratio of more than three orders of magnitude of the Gd{sub x}O{sub y} RRAMs can be obtained.

  1. Solution-processed carbon nanotube thin-film complementary static random access memory

    NASA Astrophysics Data System (ADS)

    Geier, Michael L.; McMorrow, Julian J.; Xu, Weichao; Zhu, Jian; Kim, Chris H.; Marks, Tobin J.; Hersam, Mark C.

    2015-11-01

    Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.

  2. Solution-processed carbon nanotube thin-film complementary static random access memory.

    PubMed

    Geier, Michael L; McMorrow, Julian J; Xu, Weichao; Zhu, Jian; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2015-11-01

    Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. PMID:26344184

  3. Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode.

    PubMed

    Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

    2014-10-31

    Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 10(5) s with a memory margin of 9.2 × 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 × 10(5), and bending-fatigue-free cycles of ∼1 × 10(3) with a memory margin (I(on)/I(off)) of 3.3 × 10(5). PMID:25297517

  4. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    NASA Astrophysics Data System (ADS)

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  5. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    PubMed Central

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-01-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

  6. Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

    SciTech Connect

    Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap

    2014-12-07

    Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

  7. Flash Memory Device with ‘I’ Shape Floating Gate for Sub-70 nm NAND Flash Memory

    NASA Astrophysics Data System (ADS)

    Jung, Sang-Goo; Lee, Jong-Ho

    2006-11-01

    In this article, we proposed a novel ‘I’ shape floating gate applicable to the sub-70 nm flash memory cell with high performance and scalability. It has modified floating gate of conventional flash memory to have high coupling-ratio (\\mathit{CR}), low effect of interference or cross-talk. Specifically, it has ˜13% higher \\mathit{CR} and ˜33/46% lower effect of cross-talk of the bit-line/word-line state than those of conventional flash memory cell with scale-downed geometry. In addition, ‘I’ shape flash memory cell shows improved characteristics about programming time, drain disturbance, read current, sub-threshold swing, and drain induced barrier lowering than conventional flash memory cell.

  8. Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge-Sb-Te Films

    NASA Astrophysics Data System (ADS)

    Yoon, Sung-Min; Lee, Seung-Yun; Jung, Soon-Won; Park, Young-Sam; Yu, Byoung-Gon

    2009-04-01

    A unique and novel phase-change memory device employing multilayered chalcogenide films was proposed and fabricated. In this structure, Ge18Sb39Te43, which corresponds to a 22 at. % Sb-excessive phase of typical stoichiometric Ge2Sb2Te5 (GST), was located in the middle and acted as the main operating region to exploit its superior properties, thus ensuring reliable memory operations. Thinner GST layers were inserted to above and below the middle layer. The introduction of a bottom GST layer promotes the temperature rise and the thermal insulation within the device operating volume owing to its lower thermal conductivity. The top GST layer effectively suppresses the undesirable interdiffusion between the top electrode of W and the Sb added to excess. Moreover, the upper and lower GST supplementary layers promote the initial crystallization stage during set operations owing to their higher crystallization rate compared with that of the Sb-rich phase of GST. As a result, the required current for reset, the required time for set, and the number of rewritable cycles of the proposed device with an active pore size of 0.5 ×0.5 µm2 were 6.1 mA, 80 ns, and 6.4 ×106, respectively, which are superior values compared with those for the device using a single layer of Ge18Sb39Te43. We can conclude that the proposed multilayered structure of compositionally modified GST films provides a very promising approach to enhancing all types of the memory behaviors required for the phase-change memory devices.

  9. Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

    NASA Astrophysics Data System (ADS)

    Zhong, L.; Jiang, L.; Huang, R.; de Groot, C. H.

    2014-03-01

    Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 106-108. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 107 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RMs.

  10. Wavelet analysis and HHG in nanorings: their applications in logic gates and memory mass devices

    NASA Astrophysics Data System (ADS)

    Cricchio, Dario; Fiordilino, Emilio

    2016-01-01

    We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning Boolean values to different states of the incident laser field and to the emitted signals, we can create logic gates such as OR, XOR and AND. We also show the possibility of making logic circuits such as half-adder and full-adder using one and two nanorings respectively. Using two nanorings we made the Toffoli gate. Finally we use the final angular momentum acquired by the electron to store information and hence show the possibility of using an array of nanorings as a mass memory device.

  11. Wavelet analysis and HHG in nanorings: their applications in logic gates and memory mass devices.

    PubMed

    Cricchio, Dario; Fiordilino, Emilio

    2016-01-28

    We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning Boolean values to different states of the incident laser field and to the emitted signals, we can create logic gates such as OR, XOR and AND. We also show the possibility of making logic circuits such as half-adder and full-adder using one and two nanorings respectively. Using two nanorings we made the Toffoli gate. Finally we use the final angular momentum acquired by the electron to store information and hence show the possibility of using an array of nanorings as a mass memory device. PMID:26662194

  12. Probing complementary memristive characteristics in oxide based memory device via non-conventional chronoamperometry approach

    NASA Astrophysics Data System (ADS)

    Younis, Adnan; Zhang, Lepeng; Chu, Dewei; Li, Sean

    2016-01-01

    In this letter, the resistive switching characteristics of CeO2 based memristor are investigated by utilizing an unusual, non-conventional, and a unique approach of "chronoamperometry." This methodology provides useful insights into memristive characterization for achieving configurable device functionalities such as categorization of minimum threshold potential to prompt switching behaviour, tuneable on/off ratios with accessible multi-level data storage states, etc. Moreover, the analytical studies on carrier drift/diffusion controlled-memristor response and the estimation of time constants at various applied fixed potentials provide tangible evidence to support valence change mechanism in CeO2 based memristors.

  13. Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films.

    PubMed

    Baek, Hyunhee; Lee, Chanwoo; Choi, Jungkyu; Cho, Jinhan

    2013-01-01

    We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process. PMID:23210494

  14. A multiscale simulation technique for molecular electronics: design of a directed self-assembled molecular n-bit shift register memory device

    NASA Astrophysics Data System (ADS)

    Lambropoulos, Nicholas A.; Reimers, Jeffrey R.; Crossley, Maxwell J.; Hush, Noel S.; Silverbrook, Kia

    2013-12-01

    A general method useful in molecular electronics design is developed that integrates modelling on the nano-scale (using quantum-chemical software) and on the micro-scale (using finite-element methods). It is applied to the design of an n-bit shift register memory that could conceivably be built using accessible technologies. To achieve this, the entire complex structure of the device would be built to atomic precision using feedback-controlled lithography to provide atomic-level control of silicon devices, controlled wet-chemical synthesis of molecular insulating pillars above the silicon, and controlled wet-chemical self-assembly of modular molecular devices to these pillars that connect to external metal electrodes (leads). The shift register consists of n connected cells that read data from an input electrode, pass it sequentially between the cells under the control of two external clock electrodes, and deliver it finally to an output device. The proposed cells are trimeric oligoporphyrin units whose internal states are manipulated to provide functionality, covalently connected to other cells via dipeptide linkages. Signals from the clock electrodes are conveyed by oligoporphyrin molecular wires, and μ-oxo porphyrin insulating columns are used as the supporting pillars. The developed multiscale modelling technique is applied to determine the characteristics of this molecular device, with in particular utilization of the inverted region for molecular electron-transfer processes shown to facilitate latching and control using exceptionally low energy costs per logic operation compared to standard CMOS shift register technology.

  15. Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices.

    PubMed

    Chang, Hsuan-Chun; Lu, Chien; Liu, Cheng-Liang; Chen, Wen-Chang

    2015-01-01

    Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture. PMID:25358891

  16. Implantation of venous access devices under local anesthesia: patients’ satisfaction with oral lorazepam

    PubMed Central

    Chang, De-Hua; Hiss, Sonja; Herich, Lena; Becker, Ingrid; Mammadov, Kamal; Franke, Mareike; Mpotsaris, Anastasios; Kleinert, Robert; Persigehl, Thorsten; Maintz, David; Bangard, Christopher

    2015-01-01

    Objective The aim of the study reported here was to evaluate patients’ satisfaction with implantation of venous access devices under local anesthesia (LA) with and without additional oral sedation. Materials and methods A total of 77 patients were enrolled in the prospective descriptive study over a period of 6 months. Subcutaneous implantable venous access devices through the subclavian vein were routinely implanted under LA. Patients were offered an additional oral sedative (lorazepam) before each procedure. The level of anxiety/tension, the intensity of pain, and patients’ satisfaction were evaluated before and immediately after the procedure using a visual analog scale (ranging from 0 to 10) with a standardized questionnaire. Results Patients’ satisfaction with the procedure was high (mean: 1.3±2.0) with no significant difference between the group with premedication and the group with LA alone (P=0.54). However, seven out of 30 patients (23.3%) in the group that received premedication would not undergo the same procedure without general anesthesia. There was no significant influence of lorazepam on the intensity of pain (P=0.88). In 12 out of 30 patients (40%) in the premedication group, the level of tension was higher than 5 on the visual analog scale during the procedure. In 21 out of 77 patients (27.3%), the estimate of the level of tension differed between the interventionist and the patient by 3 or more points in 21 out of 77 patients (27.3%). Conclusion Overall patient satisfaction is high for implantation of venous access devices under LA. A combination of LA with lorazepam administered orally might not be adequate for patients with a high level of anxiety and tension. The level of tension is often underestimated by the interventionist. Pre-procedural standardized questionnaires could be used to identify patients for whom a gradual approach of individualized sedation may be more effective. PMID:26185424

  17. Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory

    NASA Astrophysics Data System (ADS)

    Fuketa, Hiroshi; O'uchi, Shin-ichi; Fukuda, Koichi; Mori, Takahiro; Morita, Yukinori; Masahara, Meishoku; Matsukawa, Takashi

    2016-04-01

    Variations of eight-transistor (8T) tunnel FET (TFET) static random access memory (SRAM) cells at ultra-low supply voltage (V DD) of 0.3 V are discussed. A closed-form analytical model for the static noise margin (SNM) of the TFET SRAM cells is proposed to clarify the dependence of SNM on device parameters and is verified by simulations. The SNM variations caused by process variations are investigated using the proposed model, and we show a requirement for the threshold voltage (V TH) variation in the TFET SRAM design, which indicates that the V TH variation must be reduced as the subthreshold swing becomes steeper. In addition, a feasibility of the TFET SRAM cells operating at V DD = 0.3 V in two different process technologies is evaluated using the proposed model.

  18. Apical access and closure devices for transapical transcatheter heart valve procedures.

    PubMed

    Ferrari, Enrico

    2016-01-01

    The majority of transcatheter aortic valve implantations, structural heart procedures and the newly developed transcatheter mitral valve repair and replacement are traditionally performed either through a transfemoral or a transapical access site, depending on the presence of severe peripheral vascular disease or anatomic limitations. The transapical approach, which carries specific advantages related to its antegrade nature and the short distance between the introduction site and the cardiac target, is traditionally performed through a left anterolateral mini-thoracotomy and requires rib retractors, soft tissue retractors and reinforced apical sutures to secure, at first, the left ventricular apex for the introduction of the stent-valve delivery systems and then to seal the access site at the end of the procedure. However, despite the advent of low-profile apical sheaths and newly designed delivery systems, the apical approach represents a challenge for the surgeon, as it has the risk of apical tear, life-threatening apical bleeding, myocardial damage, coronary damage and infections. Last but not least, the use of large-calibre stent-valve delivery systems and devices through standard mini-thoracotomies compromises any attempt to perform transapical transcatheter structural heart procedures entirely percutaneously, as happens with the transfemoral access site, or via a thoracoscopic or a miniaturised video-assisted percutaneous technique. During the past few years, prototypes of apical access and closure devices for transapical heart valve procedures have been developed and tested to make this standardised successful procedure easier. Some of them represent an important step towards the development of truly percutaneous transcatheter transapical heart valve procedures in the clinical setting. PMID:26900765

  19. Comparing the Push-Pull Versus Discard Blood Sample Method From Adult Central Vascular Access Devices.

    PubMed

    Byrne, Dia

    2016-01-01

    This study demonstrates the feasibility of replacing the discard blood sampling method for central vascular access devices with the push-pull method. A comparative, within-subject design was used to evaluate 61 unique, paired blood samples from 1 adult outpatient oncology clinic. A 21-measure laboratory panel was conducted on each of the paired samples. Interpretation showed a small mean bias and excellent agreement between the methods. Blood samples obtained using the push-pull method were within clinically acceptable ranges. No hemolysis was noted by laboratory evaluation of 59 samples. PMID:27074989

  20. Catheter Securement Systems for Peripherally Inserted and Nontunneled Central Vascular Access Devices

    PubMed Central

    Krenik, Karen M.; Smith, Graham E.

    2016-01-01

    Sutureless catheter securement systems are intended to eliminate risks associated with sutures. The clinical acceptability of a novel system was investigated compared with the current method of securement for peripherally inserted central catheters (19 facilities using StatLock or sutures) or nontunneled central vascular access devices (3 facilities using StatLock or sutures or HubGuard + Sorbaview Shield). More than 94% of respondents rated the novel system as same, better, or much better than their current product. More than 82% of respondents were willing to replace their current system with the new one. PMID:27379679