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Sample records for access memory ram

  1. Remotely Accessible Management System (RAMS).

    ERIC Educational Resources Information Center

    Wood, Rex

    Oakland Schools, an Intermediate School District for Administration, operates a Remotely Accessible Management System (RAMS). RAMS is composed of over 100 computer programs, each of which performs procedures on the files of the 28 local school districts comprising the constituency of Oakland Schools. This regional service agency covers 900 square…

  2. Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

    NASA Astrophysics Data System (ADS)

    Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng

    2015-01-01

    A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices. Observing the resistive switching mechanism exhibited by all the samples suggested that Cu conductive filaments formed and ruptured during the set/reset process. The experimental results indicated that the endurance property failure that occurred was related to the joule heating effect. Moreover, the endurance switching cycle increased as the Cu concentration decreased. In high-temperature tests, the samples demonstrated that the operating (set/reset) voltages decreased as the temperature increased, and an Arrhenius plot was used to calculate the activation energy of the set/reset process. In addition, the samples demonstrated stable data retention properties when baked at 85 °C, but the samples with low Cu concentrations exhibited short retention times in the low-resistance state (LRS) during 125 °C tests. Therefore, Cu concentration is a crucial factor in the trade-off between the endurance and retention properties; furthermore, the Cu concentration can be easily modulated using this CS technique.

  3. Is random access memory random?

    NASA Technical Reports Server (NTRS)

    Denning, P. J.

    1986-01-01

    Most software is contructed on the assumption that the programs and data are stored in random access memory (RAM). Physical limitations on the relative speeds of processor and memory elements lead to a variety of memory organizations that match processor addressing rate with memory service rate. These include interleaved and cached memory. A very high fraction of a processor's address requests can be satified from the cache without reference to the main memory. The cache requests information from main memory in blocks that can be transferred at the full memory speed. Programmers who organize algorithms for locality can realize the highest performance from these computers.

  4. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  5. A 16K-bit static IIL RAM with 25-ns access time

    NASA Astrophysics Data System (ADS)

    Inabe, Y.; Hayashi, T.; Kawarada, K.; Miwa, H.; Ogiue, K.

    1982-04-01

    A 16,384 x 1-bit RAM with 25-ns access time, 600-mW power dissipation, and 33 sq mm chip size has been developed. Excellent speed-power performance with high packing density has been achieved by an oxide isolation technology in conjunction with novel ECL circuit techniques and IIL flip-flop memory cells, 980 sq microns (35 x 28 microns) in cell size. Development results have shown that IIL flip-flop memory cell is a trump card for assuring achievement of a high-performance large-capacity bipolar RAM, in the above 16K-bit/chip area.

  6. Optical RAM row access using WDM-enabled all-passive row/column decoders

    NASA Astrophysics Data System (ADS)

    Papaioannou, Sotirios; Alexoudi, Theoni; Kanellos, George T.; Miliou, Amalia; Pleros, Nikos

    2014-03-01

    Towards achieving a functional RAM organization that reaps the advantages offered by optical technology, a complete set of optical peripheral modules, namely the Row (RD) and Column Decoder (CD) units, is required. In this perspective, we demonstrate an all-passive 2×4 optical RAM RD with row access operation and subsequent all-passive column decoding to control the access of WDM-formatted words in optical RAM rows. The 2×4 RD exploits a WDM-formatted 2-bit-long memory WordLine address along with its complementary value, all of them encoded on four different wavelengths and broadcasted to all RAM rows. The RD relies on an all-passive wavelength-selective filtering matrix (λ-matrix) that ensures a logical `0' output only at the selected RAM row. Subsequently, the RD output of each row drives the respective SOA-MZI-based Row Access Gate (AG) to grant/block the entry of the incoming data words to the whole memory row. In case of a selected row, the data word exits the row AG and enters the respective CD that relies on an allpassive wavelength-selective Arrayed Waveguide Grating (AWG) for decoding the word bits into their individual columns. Both RD and CD procedures are carried out without requiring any active devices, assuming that the memory address and data word bits as well as their inverted values will be available in their optical form by the CPU interface. Proof-of-concept experimental verification exploiting cascaded pairs of AWGs as the λ-matrix is demonstrated at 10Gb/s, providing error-free operation with a peak power penalty lower than 0.2dB for all optical word channels.

  7. Paging memory from random access memory to backing storage in a parallel computer

    DOEpatents

    Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

    2013-05-21

    Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

  8. A RAM architecture for concurrent access and on-chip testing

    NASA Technical Reports Server (NTRS)

    Liu, Jyh-Charn; Shin, Kang G.

    1991-01-01

    A novel RAM architecture supporting concurrent memory access and on-chip testing (CMAT) is proposed. A large-capacity memory chip is decomposed into test neighborhoods (TNDs), each of which is tested independently. When there are data stored in a TND, the data are saved into a buffer before testing the TND, and the TND's contents are restored using buffered data after testing the TND. If an external request is not made to the TND, the request can be directed to the addressed memory cells. Otherwise, the buffered data can be loaded back into the TND, or the request is detoured to a corresponding buffer. By deriving an analytical model, the performance penalty and hardware overhead of the CMAT architecture are shown to be very small.

  9. Windsock memory COnditioned RAM (CO-RAM) pressure effect: Forced reconnection in the Earth's magnetotail

    NASA Astrophysics Data System (ADS)

    Vörös, Z.; Facskó, G.; Khodachenko, M.; Honkonen, I.; Janhunen, P.; Palmroth, M.

    2014-08-01

    Magnetic reconnection (MR) is a key physical concept explaining the addition of magnetic flux to the magnetotail and closed flux lines back-motion to the dayside magnetosphere. This scenario elaborated by Dungey (1963) can explain many aspects of solar wind-magnetosphere interaction processes, including substorms. However, neither the Dungey model nor its numerous modifications were able to explain fully the onset conditions for MR in the tail. In this paper, we introduce new onset conditions for forced MR in the tail. We call our scenario the "windsock memory conditioned ram pressure effect." Our nonflux transfer-associated forcing is introduced by a combination of the large-scale windsock motions exhibiting memory effects and solar wind dynamic pressure actions on the nightside magnetopause during northward oriented interplanetary magnetic field (IMF). Using global MHD Grand Unified Magnetosphere Ionosphere Coupling Simulation version 4 simulation results, upstream data from Wind, magnetosheath data from Cluster 1 and distant tail data from the two-probe Acceleration, Reconnection, Turbulence and Electrodynamics of the Moon's Interaction with the Sun mission, we show that the simultaneous occurrence of vertical windsock motions of the magnetotail and enhanced solar wind dynamic pressure introduces strong nightside disturbances, including enhanced electric fields and persistent vertical cross-tail shear flows. These perturbations, associated with a stream interaction region in the solar wind, drive MR in the tail during episodes of northward oriented interplanetary magnetic field (IMF). We detect MR indirectly, observing plasmoids in the tail and ground-based signatures of earthward moving fast flows. We also consider the application to solar system planets and close-in exoplanets, where the proposed scenario can elucidate some new aspects of solar/stellar wind-magnetosphere interactions.

  10. Atomic memory access hardware implementations

    DOEpatents

    Ahn, Jung Ho; Erez, Mattan; Dally, William J

    2015-02-17

    Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

  11. Optical RAM-enabled cache memory and optical routing for chip multiprocessors: technologies and architectures

    NASA Astrophysics Data System (ADS)

    Pleros, Nikos; Maniotis, Pavlos; Alexoudi, Theonitsa; Fitsios, Dimitris; Vagionas, Christos; Papaioannou, Sotiris; Vyrsokinos, K.; Kanellos, George T.

    2014-03-01

    The processor-memory performance gap, commonly referred to as "Memory Wall" problem, owes to the speed mismatch between processor and electronic RAM clock frequencies, forcing current Chip Multiprocessor (CMP) configurations to consume more than 50% of the chip real-estate for caching purposes. In this article, we present our recent work spanning from Si-based integrated optical RAM cell architectures up to complete optical cache memory architectures for Chip Multiprocessor configurations. Moreover, we discuss on e/o router subsystems with up to Tb/s routing capacity for cache interconnection purposes within CMP configurations, currently pursued within the FP7 PhoxTrot project.

  12. Reliability study of retention and memory gate integrity in a 1K MNOS RAM

    SciTech Connect

    Nasby, R.D.; Miller, W.M.; White, R.L.

    1986-01-01

    The reliability of a 1K MNOS RAM with regards to retention and nitride gate integrity has been demonstrated. Over 400 devices were screened and life tested to demonstrate 0.999 reliability during device life. The device was a 1K MNOS memory used in a RAM application with an erase/write cycle of 32 microseconds and a life specification of 1E7 cycles.

  13. Nonvolatile random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1994-01-01

    A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

  14. Remote direct memory access

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.

    2012-12-11

    Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

  15. Micro-Radiography Using an Electron Linac Source and Ram Memory Chip Detectors

    DTIC Science & Technology

    1990-06-01

    comme source un accelerateur lineaire d’electron a impulsion ( LINAC ) et utilisant des memoires a circuits integres comme detecteur est etudiee dans ce...MICRO-RADIOGRAPHY USING AN ELECTRON LINAC SOURCE AND RAM MEMORY CHIP DETECTORS (U) by 00 T. Cousins, E.L Karam and J.R. Brisson ("NI DTIC.. ELECTE...Defence nationaie MICRO-RADIOGRAPHY USING AN ELECTRON LINAC SOURCE AND RAM MEMORY CHIP DETECTORS (U) by T. Cousins, E.L Karam and J.R. Brisson Nuclear

  16. Plated wire random access memories

    NASA Technical Reports Server (NTRS)

    Gouldin, L. D.

    1975-01-01

    A program was conducted to construct 4096-work by 18-bit random access, NDRO-plated wire memory units. The memory units were subjected to comprehensive functional and environmental tests at the end-item level to verify comformance with the specified requirements. A technical description of the unit is given, along with acceptance test data sheets.

  17. Memory availability and referential access

    PubMed Central

    Johns, Clinton L.; Gordon, Peter C.; Long, Debra L.; Swaab, Tamara Y.

    2013-01-01

    Most theories of coreference specify linguistic factors that modulate antecedent accessibility in memory; however, whether non-linguistic factors also affect coreferential access is unknown. Here we examined the impact of a non-linguistic generation task (letter transposition) on the repeated-name penalty, a processing difficulty observed when coreferential repeated names refer to syntactically prominent (and thus more accessible) antecedents. In Experiment 1, generation improved online (event-related potentials) and offline (recognition memory) accessibility of names in word lists. In Experiment 2, we manipulated generation and syntactic prominence of antecedent names in sentences; both improved online and offline accessibility, but only syntactic prominence elicited a repeated-name penalty. Our results have three important implications: first, the form of a referential expression interacts with an antecedent’s status in the discourse model during coreference; second, availability in memory and referential accessibility are separable; and finally, theories of coreference must better integrate known properties of the human memory system. PMID:24443621

  18. Energy-Saving RAM-Power Tap

    NASA Technical Reports Server (NTRS)

    Bruner, Alan Roy

    1987-01-01

    Reverse-flow HEXFET(R) minimizes voltage drop and power dissipation. HEXFET(R) scheme reduces voltage drop by approximately 80 percent. Design for power tap for random-access memory (RAM) has potential application in digital systems.

  19. Flexible resistive random access memory using NiOx/GaN microdisk arrays fabricated on graphene films.

    PubMed

    Lee, Keundong; Park, Jong-Woo; Tchoe, Youngbin; Yoon, Jiyoung; Chung, Kunook; Yoon, Hosang; Lee, Sangik; Yoon, Chansoo; Park, Bae; Yi, Gyu-Chul

    2017-03-17

    We report on flexible resistive random access memory (ReRAM) arrays fabricated using NiOx/GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor deposition, followed by deposition of NiOx thin layers and Au metal contacts. The microdisk ReRAM arrays were transferred to flexible plastic substrates by a simple lift-off technique. The electrical and memory characteristics of the ReRAM devices were investigated under bending conditions. Resistive switching characteristics, including cumulative probability, endurance, and retention, were measured. After 1000 bending repetitions, no significant change in the device characteristics was observed. The flexible ReRAM devices, constructed using only inorganic materials, operated reliably at temperatures as high as 180°C.

  20. Memory access in shared virtual memory

    SciTech Connect

    Berrendorf, R. )

    1992-01-01

    Shared virtual memory (SVM) is a virtual memory layer with a single address space on top of a distributed real memory on parallel computers. We examine the behavior and performance of SVM running a parallel program with medium-grained, loop-level parallelism on top of it. A simulator for the underlying parallel architecture can be used to examine the behavior of SVM more deeply. The influence of several parameters, such as the number of processors, page size, cold or warm start, and restricted page replication, is studied.

  1. Memory access in shared virtual memory

    SciTech Connect

    Berrendorf, R.

    1992-09-01

    Shared virtual memory (SVM) is a virtual memory layer with a single address space on top of a distributed real memory on parallel computers. We examine the behavior and performance of SVM running a parallel program with medium-grained, loop-level parallelism on top of it. A simulator for the underlying parallel architecture can be used to examine the behavior of SVM more deeply. The influence of several parameters, such as the number of processors, page size, cold or warm start, and restricted page replication, is studied.

  2. Optical Addressing And Clocking Of RAM's

    NASA Technical Reports Server (NTRS)

    Johnston, Alan R.; Nixon, Robert H.; Bergman, Larry A.; Esener, Sadik

    1989-01-01

    Proposed random-access-memory (RAM) addressing system, in which memory linked optically to read/write logic circuits, greatly increases computer operating speed. System - comprises addressing circuits including numerous lasers as signal sources, numerous optical gates including optical detectors associated with memory cells, and holographic element to direct light signals to desired memory-cell locations - applied to high-capacity digital systems, supercomputers, and complex microcircuits.

  3. Magnetic Analog Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

    1991-01-01

    Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

  4. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  5. Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles.

    PubMed

    Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2016-08-21

    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.

  6. Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

    NASA Astrophysics Data System (ADS)

    Arita, Masashi; Ohno, Yuuki; Murakami, Yosuke; Takamizawa, Keisuke; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2016-08-01

    The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process.The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN). The relationship between the switching properties and the dynamics of the ReRAM microstructure was confirmed experimentally. The growth and/or shrinkage of the conductive filament (CF) can be classified into two set modes and two reset modes. These switching modes depend on the device's switching history, factors such as the amount of Cu inclusions in the MoOx layer and the CF geometry. High currents are needed to produce an observable change in the CF. However, sharp and stable switching behaviour can be achieved without requiring such a major change. The local region around the CF is thought to contribute to the ReRAM switching process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02602h

  7. Direct access to working memory contents.

    PubMed

    Bialkova, Svetlana; Oberauer, Klaus

    2010-01-01

    In two experiments participants held in working memory (WM) three digits in three different colors, and updated individual digits with the results of arithmetic equations presented in one of the colors. In the memory-access condition, a digit from WM had to be used as the first number in the equation; in the no-access condition, complete equations were presented so that no information from WM had to be accessed for the computation. Updating a digit not updated in the preceding step took longer than updating the same digit as in the preceding step, a time difference referred to as object-switch costs. Object-switch costs were equal in access and no-access equations, implying that they did not reflect the time to retrieve a new digit from WM. Access equations were completed as fast as no-access equations, implying that access to information in WM is as fast as reading the same information. No-access equations were slowed by a mismatch between the first digit of the presented equation and the to-be-updated digit in WM, showing that this digit is automatically accessed even when not needed. It is concluded that contents and their contexts form composites in WM that are necessarily accessed together.

  8. Experimental Results and Issues on Equalization for Nonlinear Memory Channel: Pre-Cursor Enhanced Ram-DFE Canceler

    NASA Technical Reports Server (NTRS)

    Yuan, Lu; LeBlanc, James

    1998-01-01

    This thesis investigates the effects of the High Power Amplifier (HPA) and the filters over a satellite or telemetry channel. The Volterra series expression is presented for the nonlinear channel with memory, and the algorithm is based on the finite-state machine model. A RAM-based algorithm operating on the receiver side, Pre-cursor Enhanced RAM-FSE Canceler (PERC) is developed. A high order modulation scheme , 16-QAM is used for simulation, the results show that PERC provides an efficient and reliable method to transmit data on the bandlimited nonlinear channel. The contribution of PERC algorithm is that it includes both pre-cursors and post-cursors as the RAM address lines, and suggests a new way to make decision on the pre-addresses. Compared with the RAM-DFE structure that only includes post- addresses, the BER versus Eb/NO performance of PERC is substantially enhanced. Experiments are performed for PERC algorithms with different parameters on AWGN channels, and the results are compared and analyzed. The investigation of this thesis includes software simulation and hardware verification. Hardware is setup to collect actual TWT data. Simulation on both the software-generated data and the real-world data are performed. Practical limitations are considered for the hardware collected data. Simulation results verified the reliability of the PERC algorithm. This work was conducted at NMSU in the Center for Space Telemetering and Telecommunications Systems in the Klipsch School of Electrical and Computer Engineering Department.

  9. Low latency memory access and synchronization

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E.; Vranas, Pavlos M.

    2007-02-06

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Each processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  10. Low latency memory access and synchronization

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.; Gara, Alan G.; Giampapa, Mark E.; Heidelberger, Philip; Hoenicke, Dirk; Ohmacht, Martin; Steinmacher-Burow, Burkhard D.; Takken, Todd E. , Vranas; Pavlos M.

    2010-10-19

    A low latency memory system access is provided in association with a weakly-ordered multiprocessor system. Bach processor in the multiprocessor shares resources, and each shared resource has an associated lock within a locking device that provides support for synchronization between the multiple processors in the multiprocessor and the orderly sharing of the resources. A processor only has permission to access a resource when it owns the lock associated with that resource, and an attempt by a processor to own a lock requires only a single load operation, rather than a traditional atomic load followed by store, such that the processor only performs a read operation and the hardware locking device performs a subsequent write operation rather than the processor. A simple prefetching for non-contiguous data structures is also disclosed. A memory line is redefined so that in addition to the normal physical memory data, every line includes a pointer that is large enough to point to any other line in the memory, wherein the pointers to determine which memory line to prefetch rather than some other predictive algorithm. This enables hardware to effectively prefetch memory access patterns that are non-contiguous, but repetitive.

  11. Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

    SciTech Connect

    Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun

    2015-05-18

    This paper reports the bipolar resistive switching characteristics of TaN{sub x}-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from −0.82 V to −0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10{sup 5 }s) and pulse-switching endurance (>10{sup 6} cycles) properties. These results indicate that TaN{sub x}-based ReRAM devices have a potential for future nonvolatile memory devices.

  12. Enhancing Memory Access for Less Skilled Readers

    ERIC Educational Resources Information Center

    Smith, Emily R.; O'Brien, Edward J.

    2016-01-01

    Less skilled readers' comprehension often suffers because they have an impoverished representation of text in long-term memory; this, in turn, increases the difficulty of gaining access to backgrounded information necessary for maintaining coherence. The results of four experiments demonstrated that providing less skilled readers with additional…

  13. Purely antiferromagnetic magnetoelectric random access memory.

    PubMed

    Kosub, Tobias; Kopte, Martin; Hühne, Ruben; Appel, Patrick; Shields, Brendan; Maletinsky, Patrick; Hübner, René; Liedke, Maciej Oskar; Fassbender, Jürgen; Schmidt, Oliver G; Makarov, Denys

    2017-01-03

    Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.

  14. Purely antiferromagnetic magnetoelectric random access memory

    NASA Astrophysics Data System (ADS)

    Kosub, Tobias; Kopte, Martin; Hühne, Ruben; Appel, Patrick; Shields, Brendan; Maletinsky, Patrick; Hübner, René; Liedke, Maciej Oskar; Fassbender, Jürgen; Schmidt, Oliver G.; Makarov, Denys

    2017-01-01

    Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.

  15. Non-volatile magnetic random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

    1994-01-01

    Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

  16. Time-bin quantum RAM

    NASA Astrophysics Data System (ADS)

    Moiseev, E. S.; Moiseev, S. A.

    2016-11-01

    We have proposed a compact scheme of quantum random access memory (qRAM) based on the impedance matched multi-qubit photon echo quantum memory incorporated with the control four-level atom in two coupled QED cavities. A set of matching conditions for basic physical parameters of the qRAM scheme that provides an efficient quantum control of the fast single photon storage and readout has been found. In particular, it has been discovered that the efficient qRAM operations are determined by the specific properties of the excited photonic molecule coupling the two QED cavities. Herein, the maximal efficiency of the qRAM is realized when the cooperativity parameter of the photonic molecule equals to unity that can be experimentally achievable. We have also elaborated upon the new quantum address scheme where the multi-time-bin photon state is used for the control of the four-level atom during the readout of the photonic qubits from the quantum memory. The scheme reduces the required number of logical elements to one. Experimental implementation by means of current quantum technologies in the optical and microwave domains is also discussed.

  17. A 1K shadow RAM for circumvention applications

    SciTech Connect

    Murray, J.R. )

    1991-12-01

    This paper reports that circumvention applications require a memory that retains data through radiation (total dose and transient) and loss of power. Various memory technologies have been reviewed and none, as yet, can meet, these requirements. However, if complementary metal oxide silicon (CMOS) and silicon nitride oxide silicon (SNOS) memories are combined in a shadow RAM (random access memory) configuration, the requirements can be fulfilled.

  18. Purely antiferromagnetic magnetoelectric random access memory

    PubMed Central

    Kosub, Tobias; Kopte, Martin; Hühne, Ruben; Appel, Patrick; Shields, Brendan; Maletinsky, Patrick; Hübner, René; Liedke, Maciej Oskar; Fassbender, Jürgen; Schmidt, Oliver G.; Makarov, Denys

    2017-01-01

    Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics. PMID:28045029

  19. High Speed Oblivious Random Access Memory (HS-ORAM)

    DTIC Science & Technology

    2015-09-01

    HIGH SPEED OBLIVIOUS RANDOM ACCESS MEMORY (HS-ORAM) PRIVATE MACHINES, INC. SEPTEMBER 2015 FINAL TECHNICAL REPORT...REPORT 3. DATES COVERED (From - To) OCT 2013 – MAY 2015 4. TITLE AND SUBTITLE HIGH SPEED OBLIVIOUS RANDOM ACCESS MEMORY (HS-ORAM) 5a. CONTRACT NUMBER...query policies beyond simple access control. 15. SUBJECT TERMS Oblivious Random Access Memory , Hardware-based Security, Embedded Hardware Roots of

  20. Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

    NASA Astrophysics Data System (ADS)

    Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

    2016-04-01

    The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

  1. Recombinant azurin-CdSe/ZnS hybrid structures for nanoscale resistive random access memory device.

    PubMed

    Yagati, Ajay Kumar; Kim, Sang-Uk; Lee, Taek; Min, Junhong; Choi, Jeong-Woo

    2017-04-15

    In the present study, we developed a biohybrid material composed of recombinant azurin and CdSe-ZnS quantum dot to perform as a resistive random access memory (ReRAM) device. Site specific amino acid sequences were introduced in azurin to bind with the surface of CdSe-ZnS nanoparticle allowing the formation of a hybrid and voltage-driven switching enabled to develop a resistive random access memory (ReRAM) device. The analytical measurements confirmed that the azurin and CdSe-ZnS nanoparticles were well conjugated and formed into a single hybrid. Further, reversible, bistable switching along with repeatable writing-reading-erasing processes on individual azurin/CdSe-ZnS hybrid at nanoscale was achieved on the hybrid device. The device was programmed tested for 50 cycles with an ON/OFF ratio and measured to be of three orders of magnitude. The developed device shown good stability and repeatability and operates at low voltages thus makes it promising candidate for future memory device applications.

  2. FeTRAM. An organic ferroelectric material based novel random access memory cell.

    PubMed

    Das, Saptarshi; Appenzeller, Joerg

    2011-09-14

    Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

  3. Parallel Optical Random Access Memory (PORAM)

    NASA Technical Reports Server (NTRS)

    Alphonse, G. A.

    1989-01-01

    It is shown that the need to minimize component count, power and size, and to maximize packing density require a parallel optical random access memory to be designed in a two-level hierarchy: a modular level and an interconnect level. Three module designs are proposed, in the order of research and development requirements. The first uses state-of-the-art components, including individually addressed laser diode arrays, acousto-optic (AO) deflectors and magneto-optic (MO) storage medium, aimed at moderate size, moderate power, and high packing density. The next design level uses an electron-trapping (ET) medium to reduce optical power requirements. The third design uses a beam-steering grating surface emitter (GSE) array to reduce size further and minimize the number of components.

  4. Remote direct memory access over datagrams

    DOEpatents

    Grant, Ryan Eric; Rashti, Mohammad Javad; Balaji, Pavan; Afsahi, Ahmad

    2014-12-02

    A communication stack for providing remote direct memory access (RDMA) over a datagram network is disclosed. The communication stack has a user level interface configured to accept datagram related input and communicate with an RDMA enabled network interface card (NIC) via an NIC driver. The communication stack also has an RDMA protocol layer configured to supply one or more data transfer primitives for the datagram related input of the user level. The communication stack further has a direct data placement (DDP) layer configured to transfer the datagram related input from a user storage to a transport layer based on the one or more data transfer primitives by way of a lower layer protocol (LLP) over the datagram network.

  5. Parallel Optical Random Access Memory (PORAM)

    NASA Astrophysics Data System (ADS)

    Alphonse, G. A.

    1989-06-01

    It is shown that the need to minimize component count, power and size, and to maximize packing density require a parallel optical random access memory to be designed in a two-level hierarchy: a modular level and an interconnect level. Three module designs are proposed, in the order of research and development requirements. The first uses state-of-the-art components, including individually addressed laser diode arrays, acousto-optic (AO) deflectors and magneto-optic (MO) storage medium, aimed at moderate size, moderate power, and high packing density. The next design level uses an electron-trapping (ET) medium to reduce optical power requirements. The third design uses a beam-steering grating surface emitter (GSE) array to reduce size further and minimize the number of components.

  6. Direct memory access transfer completion notification

    DOEpatents

    Chen, Dong; Giampapa, Mark E.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.; Steinmacher-Burow, Burkhard D.; Vranas, Pavlos

    2010-07-27

    Methods, compute nodes, and computer program products are provided for direct memory access (`DMA`) transfer completion notification. Embodiments include determining, by an origin DMA engine on an origin compute node, whether a data descriptor for an application message to be sent to a target compute node is currently in an injection first-in-first-out (`FIFO`) buffer in dependence upon a sequence number previously associated with the data descriptor, the total number of descriptors currently in the injection FIFO buffer, and the current sequence number for the newest data descriptor stored in the injection FIFO buffer; and notifying a processor core on the origin DMA engine that the message has been sent if the data descriptor for the message is not currently in the injection FIFO buffer.

  7. Conductance Quantization in Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

    2015-10-01

    The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

  8. 76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-07

    ... COMMISSION In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products... States after importation of certain dynamic random access memory and NAND flash memory devices and... the sale within the United States after importation of certain dynamic random access memory and...

  9. Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

    DOEpatents

    Ohmacht, Martin

    2014-09-09

    In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

  10. 75 FR 44989 - In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-30

    ... Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers and Products... chips having synchronous dynamic random access memory controllers and product containing the same by... importing certain semiconductor chips having synchronous dynamic random access memory controllers...

  11. Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

    NASA Astrophysics Data System (ADS)

    Natarajarathinam, Anusha

    Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

  12. Parallel programmable nonvolatile memory using ordinary static random access memory cells

    NASA Astrophysics Data System (ADS)

    Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Shinohara, Hirofumi; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-04-01

    A technique of using an ordinary static random access memory (SRAM) array for a programmable nonvolatile (NV) memory is proposed. The parallel NV writing of the entire array is achieved by simply applying high-voltage stress to the power supply terminal, after storing inverted desired data in the static random access memory (SRAM) array. Successful 2 kbit NV writing is demonstrated using a device-matrix-array (DMA) test element group (TEG) fabricated by 0.18 µm technology.

  13. BCH codes for large IC random-access memory systems

    NASA Technical Reports Server (NTRS)

    Lin, S.; Costello, D. J., Jr.

    1983-01-01

    In this report some shortened BCH codes for possible applications to large IC random-access memory systems are presented. These codes are given by their parity-check matrices. Encoding and decoding of these codes are discussed.

  14. Radiation Effects of Commercial Resistive Random Access Memories

    NASA Technical Reports Server (NTRS)

    Chen, Dakai; LaBel, Kenneth A.; Berg, Melanie; Wilcox, Edward; Kim, Hak; Phan, Anthony; Figueiredo, Marco; Buchner, Stephen; Khachatrian, Ani; Roche, Nicolas

    2014-01-01

    We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

  15. The Dynamics of Access to Groups in Working Memory

    ERIC Educational Resources Information Center

    Farrell, Simon; Lelievre, Anna

    2012-01-01

    The finding that participants leave a pause between groups when attempting serial recall of temporally grouped lists has been taken to indicate access to a hierarchical representation of the list in working memory. An alternative explanation is that the dynamics of serial recall solely reflect output (rather than memorial) processes, with the…

  16. Empirical Memory-Access Cost Models in Multicore NUMA Architectures

    SciTech Connect

    McCormick, Patrick S.; Braithwaite, Ryan Karl; Feng, Wu-chun

    2011-01-01

    Data location is of prime importance when scheduling tasks in a non-uniform memory access (NUMA) architecture. The characteristics of the NUMA architecture must be understood so tasks can be scheduled onto processors that are close to the task's data. However, in modern NUMA architectures, such as AMD Magny-Cours and Intel Nehalem, there may be a relatively large number of memory controllers with sockets that are connected in a non-intuitive manner, leading to performance degradation due to uninformed task-scheduling decisions. In this paper, we provide a method for experimentally characterizing memory-access costs for modern NUMA architectures via memory latency and bandwidth microbenchmarks. Using the results of these benchmarks, we propose a memory-access cost model to improve task-scheduling decisions by scheduling tasks near the data they need. Simple task-scheduling experiments using the memory-access cost models validate the use of empirical memory-access cost models to significantly improve program performance.

  17. Memory for Recently Accessed Visual Attributes

    ERIC Educational Resources Information Center

    Jiang, Yuhong V.; Shupe, Joshua M.; Swallow, Khena M.; Tan, Deborah H.

    2016-01-01

    Recent reports have suggested that the attended features of an item may be rapidly forgotten once they are no longer relevant for an ongoing task (attribute amnesia). This finding relies on a surprise memory procedure that places high demands on declarative memory. We used intertrial priming to examine whether the representation of an item's…

  18. Direct access inter-process shared memory

    DOEpatents

    Brightwell, Ronald B; Pedretti, Kevin; Hudson, Trammell B

    2013-10-22

    A technique for directly sharing physical memory between processes executing on processor cores is described. The technique includes loading a plurality of processes into the physical memory for execution on a corresponding plurality of processor cores sharing the physical memory. An address space is mapped to each of the processes by populating a first entry in a top level virtual address table for each of the processes. The address space of each of the processes is cross-mapped into each of the processes by populating one or more subsequent entries of the top level virtual address table with the first entry in the top level virtual address table from other processes.

  19. SQL-RAMS

    NASA Technical Reports Server (NTRS)

    Alfaro, Victor O.; Casey, Nancy J.

    2005-01-01

    SQL-RAMS (where "SQL" signifies Structured Query Language and "RAMS" signifies Rocketdyne Automated Management System) is a successor to the legacy version of RAMS a computer program used to manage all work, nonconformance, corrective action, and configuration management on rocket engines and ground support equipment at Stennis Space Center. The legacy version resided in the FileMaker Pro software system and was constructed in modules that could act as stand-alone programs. There was little or no integration among modules. Because of limitations on file-management capabilities in FileMaker Pro, and because of difficulty of integration of FileMaker Pro with other software systems for exchange of data using such industry standards as SQL, the legacy version of RAMS proved to be limited, and working to circumvent its limitations too time-consuming. In contrast, SQL-RAMS is an integrated SQL-server-based program that supports all data-exchange software industry standards. Whereas in the legacy version, it was necessary to access individual modules to gain insight to a particular work-status documents, SQL-RAMS provides access through a single-screen presentation of core modules. In addition, SQL-RAMS enable rapid and efficient filtering of displayed statuses by predefined categories and test numbers. SQL-RAMS is rich in functionality and encompasses significant improvements over the legacy system. It provides users the ability to perform many tasks which in the past required administrator intervention. Additionally many of the design limitations have been corrected allowing for a robust application that is user centric.

  20. SQL-RAMS

    NASA Technical Reports Server (NTRS)

    Alfaro, Victor O.; Casey, Nancy J.

    2005-01-01

    SQL-RAMS (where "SQL" signifies Structured Query Language and "RAMS" signifies Rocketdyne Automated Management System) is a successor to the legacy version of RAMS -- a computer program used to manage all work, nonconformance, corrective action, and configuration management on rocket engines and ground support equipment at Stennis Space Center. The legacy version resided in the File-Maker Pro software system and was constructed in modules that could act as standalone programs. There was little or no integration among modules. Because of limitations on file-management capabilities in FileMaker Pro, and because of difficulty of integration of FileMaker Pro with other software systems for exchange of data using such industry standards as SQL, the legacy version of RAMS proved to be limited, and working to circumvent its limitations too time-consuming. In contrast, SQL-RAMS is an integrated SQL-server-based program that supports all data-exchange software industry standards. Whereas in the legacy version, it was necessary to access individual modules to gain insight into a particular workstatus document, SQL-RAMS provides access through a single-screen presentation of core modules. In addition, SQL-RAMS enables rapid and efficient filtering of displayed statuses by predefined categories and test numbers. SQL-RAMS is rich in functionality and encompasses significant improvements over the legacy system. It provides users the ability to perform many tasks, which in the past required administrator intervention. Additionally, many of the design limitations have been corrected, allowing for a robust application that is user centric.

  1. 75 FR 16507 - In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-01

    ... COMMISSION In the Matter of Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory... certain semiconductor chips having synchronous dynamic random access memory controllers and products... section 337 by importing certain semiconductor chips having synchronous dynamic random access...

  2. An Investigation of Unified Memory Access Performance in CUDA.

    PubMed

    Landaverde, Raphael; Zhang, Tiansheng; Coskun, Ayse K; Herbordt, Martin

    2014-09-01

    Managing memory between the CPU and GPU is a major challenge in GPU computing. A programming model, Unified Memory Access (UMA), has been recently introduced by Nvidia to simplify the complexities of memory management while claiming good overall performance. In this paper, we investigate this programming model and evaluate its performance and programming model simplifications based on our experimental results. We find that beyond on-demand data transfers to the CPU, the GPU is also able to request subsets of data it requires on demand. This feature allows UMA to outperform full data transfer methods for certain parallel applications and small data sizes. We also find, however, that for the majority of applications and memory access patterns, the performance overheads associated with UMA are significant, while the simplifications to the programming model restrict flexibility for adding future optimizations.

  3. High Performance Remote Memory Access Communication: The ARMCI Approach

    SciTech Connect

    Nieplocha, Jarek; Tipparaju, Vinod; Krishnan, Manoj Kumar; Panda, Dhabaleswar K.

    2006-07-01

    This paper describes the Aggregate Remote Memory Copy Interface (ARMCI), a portable high performance remote memory access (RMA) communication interface, developed originally under the DoE-2000 ACTS Toolkit project and currently used as a part of the run-time layer of the DoE project Programming Models for Scalable Parallel Computing. The paper discusses the model, portable implementation, and performance of ARMCI. Special emphasis is placed on the latency hiding mechanisms and ability to optimize noncontiguous data transfers.

  4. A Cerebellar-model Associative Memory as a Generalized Random-access Memory

    NASA Technical Reports Server (NTRS)

    Kanerva, Pentti

    1989-01-01

    A versatile neural-net model is explained in terms familiar to computer scientists and engineers. It is called the sparse distributed memory, and it is a random-access memory for very long words (for patterns with thousands of bits). Its potential utility is the result of several factors: (1) a large pattern representing an object or a scene or a moment can encode a large amount of information about what it represents; (2) this information can serve as an address to the memory, and it can also serve as data; (3) the memory is noise tolerant--the information need not be exact; (4) the memory can be made arbitrarily large and hence an arbitrary amount of information can be stored in it; and (5) the architecture is inherently parallel, allowing large memories to be fast. Such memories can become important components of future computers.

  5. Organizational Impact of RAMS.

    ERIC Educational Resources Information Center

    Staebler, Mel

    A series of observations is made regarding the potential impact of the Remotely Accessible Management System (RAMS) upon the administrative structure of the Pontiac, Michigan City School System. Nine major results of the district wide needs assessment are reported, and evidence is advanced to support the conclusion that modern educational…

  6. Direct memory access transfer completion notification

    DOEpatents

    Archer, Charles J.; Blocksome, Michael A.; Parker, Jeffrey J.

    2011-02-15

    DMA transfer completion notification includes: inserting, by an origin DMA engine on an origin node in an injection first-in-first-out (`FIFO`) buffer, a data descriptor for an application message to be transferred to a target node on behalf of an application on the origin node; inserting, by the origin DMA engine, a completion notification descriptor in the injection FIFO buffer after the data descriptor for the message, the completion notification descriptor specifying a packet header for a completion notification packet; transferring, by the origin DMA engine to the target node, the message in dependence upon the data descriptor; sending, by the origin DMA engine, the completion notification packet to a local reception FIFO buffer using a local memory FIFO transfer operation; and notifying, by the origin DMA engine, the application that transfer of the message is complete in response to receiving the completion notification packet in the local reception FIFO buffer.

  7. Exploiting Nonblocking Remote Memory Access Communication in Scientific Benchmarks

    SciTech Connect

    Tipparaju, Vinod; Krishnan, Manoj Kumar; Nieplocha, Jarek; Santhanaraman, Gopalakrishnan; Panda, Dhabaleswar K.

    2004-12-07

    In the last decade message passing has become the predominant programming model for scientific applications. The current paper attempts to answer the question to what degree performance of well tuned application benchmarks coded in MPI can be improved by using another related programming model, remote memory access (RMA) communication.

  8. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    SciTech Connect

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diverse manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.

  9. Kokkos: Enabling manycore performance portability through polymorphic memory access patterns

    DOE PAGES

    Carter Edwards, H.; Trott, Christian R.; Sunderland, Daniel

    2014-07-22

    The manycore revolution can be characterized by increasing thread counts, decreasing memory per thread, and diversity of continually evolving manycore architectures. High performance computing (HPC) applications and libraries must exploit increasingly finer levels of parallelism within their codes to sustain scalability on these devices. We found that a major obstacle to performance portability is the diverse and conflicting set of constraints on memory access patterns across devices. Contemporary portable programming models address manycore parallelism (e.g., OpenMP, OpenACC, OpenCL) but fail to address memory access patterns. The Kokkos C++ library enables applications and domain libraries to achieve performance portability on diversemore » manycore architectures by unifying abstractions for both fine-grain data parallelism and memory access patterns. In this paper we describe Kokkos’ abstractions, summarize its application programmer interface (API), present performance results for unit-test kernels and mini-applications, and outline an incremental strategy for migrating legacy C++ codes to Kokkos. Furthermore, the Kokkos library is under active research and development to incorporate capabilities from new generations of manycore architectures, and to address a growing list of applications and domain libraries.« less

  10. 77 FR 74222 - Certain Dynamic Random Access Memory and NAND Flash Memory Devices and Products Containing Same...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-13

    ... COMMISSION Certain Dynamic Random Access Memory and NAND Flash Memory Devices and Products Containing Same... Bentonville, Arkansas (collectively, ``the remaining respondents''); Elpida Memory, Inc. of Tokyo, Japan and Elpida Memory (USA) of Sunnyvale, California (collectively, ``Elpida''); and SK Hynix Inc. (f/k/a...

  11. Integrated, nonvolatile, high-speed analog random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor)

    1994-01-01

    This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

  12. Magnet/Hall-Effect Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

  13. 75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-25

    ... COMMISSION In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of Investigation AGENCY: U.S. International Trade Commission. ACTION... random access memory semiconductors and products containing same, including memory modules, by reason...

  14. Performance Evaluation of Remote Memory Access (RMA) Programming on Shared Memory Parallel Computers

    NASA Technical Reports Server (NTRS)

    Jin, Hao-Qiang; Jost, Gabriele; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The purpose of this study is to evaluate the feasibility of remote memory access (RMA) programming on shared memory parallel computers. We discuss different RMA based implementations of selected CFD application benchmark kernels and compare them to corresponding message passing based codes. For the message-passing implementation we use MPI point-to-point and global communication routines. For the RMA based approach we consider two different libraries supporting this programming model. One is a shared memory parallelization library (SMPlib) developed at NASA Ames, the other is the MPI-2 extensions to the MPI Standard. We give timing comparisons for the different implementation strategies and discuss the performance.

  15. 76 FR 73676 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-29

    ... COMMISSION Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint... complaint entitled In Re Certain Dynamic Random Access Memory Devices, and Products Containing Same, DN 2859... within the United States after importation of certain dynamic random access memory devices, and...

  16. 76 FR 80964 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-27

    ... COMMISSION Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of... States after importation of certain dynamic random access memory devices, and products containing same by... dynamic random access memory devices, and products containing same that infringe one or more of claims...

  17. 76 FR 2336 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Final Results of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-13

    ... International Trade Administration Dynamic Random Access Memory Semiconductors From the Republic of Korea: Final... on dynamic random access memory semiconductors from the Republic of Korea for the period January 1... publication of the preliminary results of this review. See Dynamic Random Access Memory Semiconductors...

  18. 75 FR 55764 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Preliminary Results of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-14

    ... International Trade Administration Dynamic Random Access Memory Semiconductors From the Republic of Korea... administrative review of the countervailing duty order on dynamic random access memory semiconductors from the... countervailing duty order on dynamic random access memory semiconductors (``DRAMS'') From the Republic of...

  19. Non-Volatile Memory Technology Symposium 2001: Proceedings

    NASA Technical Reports Server (NTRS)

    Aranki, Nazeeh; Daud, Taher; Strauss, Karl

    2001-01-01

    This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.

  20. Method and device for maximizing memory system bandwidth by accessing data in a dynamically determined order

    NASA Technical Reports Server (NTRS)

    Wulf, William A. (Inventor); McKee, Sally A. (Inventor); Klenke, Robert (Inventor); Schwab, Andrew J. (Inventor); Moyer, Stephen A. (Inventor); Aylor, James (Inventor); Hitchcock, Charles Young (Inventor)

    2000-01-01

    A data processing system is disclosed which comprises a data processor and memory control device for controlling the access of information from the memory. The memory control device includes temporary storage and decision ability for determining what order to execute the memory accesses. The compiler detects the requirements of the data processor and selects the data to stream to the memory control device which determines a memory access order. The order in which to access said information is selected based on the location of information stored in the memory. The information is repeatedly accessed from memory and stored in the temporary storage until all streamed information is accessed. The information is stored until required by the data processor. The selection of the order in which to access information maximizes bandwidth and decreases the retrieval time.

  1. Nonvolatile GaAs Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Stadler, Henry L.; Wu, Jiin-Chuan

    1994-01-01

    Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

  2. Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

    PubMed

    Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

    2014-06-11

    Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

  3. High-Speed Optical Library System Using Digital Versatile Disk Random Access Memory

    NASA Astrophysics Data System (ADS)

    Tanabe, Takaya; Ura, Tetsu; Yamamoto, Manabu

    2000-02-01

    A high-data-transfer-rate optical storage system using a redundant array of inexpensive libraries (RAIL) has been developed and tested. It incorporates multiple libraries, where each library consists of dual digital versatile disk (DVD) random access memory (RAM) drives and a single robotic hand and holds 2.6 GB DVD disks. To increase the reliability of data storage and at the same time to eliminate the need for read-after-write verification, which doubles the recording time, a redundant array of inexpensive drives (RAID) 4 algorithm is implemented in the control unit of the storage system. Data sent by the host is transferred to a control unit, which stripes the data into five data groups plus one parity unit. The striped and parity data is sent to individual libraries and written to the DVD disks. This system writes and retrieves data with a transfer rate of approximately 6 MB/s, using write and read control methods that minimize the data striping overhead. This reliable library system can be used for networked multimedia applications.

  4. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A; Miller, Douglas R

    2014-03-18

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  5. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A; Miller, Douglas R

    2012-10-23

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  6. Administering an epoch initiated for remote memory access

    DOEpatents

    Blocksome, Michael A.; Miller, Douglas R.

    2013-01-01

    Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

  7. 3D-ICML: A 3D Bipolar ReRAM Design with Interleaved Complementary Memory Layers

    DTIC Science & Technology

    2013-05-01

    CONFERENCE PAPER (Post Print ) 3. DATES COVERED (From - To) DEC 2010 – NOV 2012 4. TITLE AND SUBTITLE 3D -ICML: A 3D BIPOLAR RERAM DESIGN WITH...three-dimensional ( 3D ) bipolar RRAM design, an isolation layer is inserted between two adjacent memory layers. The fabrication of the isolation layer...introduces the extra process complexity, increases fabrication cost, and causes some potential reliability issues. In this paper, we propose a 3D

  8. Resistive random access memory enabled by carbon nanotube crossbar electrodes.

    PubMed

    Tsai, Cheng-Lin; Xiong, Feng; Pop, Eric; Shim, Moonsub

    2013-06-25

    We use single-walled carbon nanotube (CNT) crossbar electrodes to probe sub-5 nm memory domains of thin AlOx films. Both metallic and semiconducting CNTs effectively switch AlOx bits between memory states with high and low resistance. The low-resistance state scales linearly with CNT series resistance down to ∼10 MΩ, at which point the ON-state resistance of the AlOx filament becomes the limiting factor. Dependence of switching behavior on the number of cross-points suggests a single channel to dominate the overall characteristics in multi-crossbar devices. We demonstrate ON/OFF ratios up to 5 × 10(5) and programming currents of 1 to 100 nA with few-volt set/reset voltages. Remarkably low reset currents enable a switching power of 10-100 nW and estimated switching energy as low as 0.1-10 fJ per bit. These results are essential for understanding the ultimate scaling limits of resistive random access memory at single-nanometer bit dimensions.

  9. Experimental model studies of a hydraulic ram with special emphasis on the velocities in the ram tube

    NASA Astrophysics Data System (ADS)

    Basfeld, M.

    1980-12-01

    The velocity of the ram tube to make it accessible for production in pattern flows examining human circulation was investigated. A simplified theory of the function of the hydraulic ram was developed using the Navier-Stokes equation for a square rubbing component for one dimensional flows. The influence of the valve movement on the ram efficiency is evaluated. The difference between the significance of the influences on the ram model as opposed to the technical ram is discussed.

  10. Efficient Memory Access with NumPy Global Arrays using Local Memory Access

    SciTech Connect

    Daily, Jeffrey A.; Berghofer, Dan C.

    2013-08-03

    This paper discusses the work completed working with Global Arrays of data on distributed multi-computer systems and improving their performance. The tasks completed were done at Pacific Northwest National Laboratory in the Science Undergrad Laboratory Internship program in the summer of 2013 for the Data Intensive Computing Group in the Fundamental and Computational Sciences DIrectorate. This work was done on the Global Arrays Toolkit developed by this group. This toolkit is an interface for programmers to more easily create arrays of data on networks of computers. This is useful because scientific computation is often done on large amounts of data sometimes so large that individual computers cannot hold all of it. This data is held in array form and can best be processed on supercomputers which often consist of a network of individual computers doing their computation in parallel. One major challenge for this sort of programming is that operations on arrays on multiple computers is very complex and an interface is needed so that these arrays seem like they are on a single computer. This is what global arrays does. The work done here is to use more efficient operations on that data that requires less copying of data to be completed. This saves a lot of time because copying data on many different computers is time intensive. The way this challenge was solved is when data to be operated on with binary operations are on the same computer, they are not copied when they are accessed. When they are on separate computers, only one set is copied when accessed. This saves time because of less copying done although more data access operations were done.

  11. Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr0.52Ti0.48O3 for very-large-scale-integrated memory

    NASA Astrophysics Data System (ADS)

    Hyo Park, Jae; Kim, Hyung Yoon; Jang, Gil Su; Ahn, Donghwan; Joo, Seung Ki

    2016-02-01

    Controlling the grain-boundary of ferroelectric thin-film is significantly important for realizing ultimate multibit-FeRAM, when a ferroelectric thin-film deposited by radio-frequency reactive magnetron sputtering is integrated into silicon-based devices. A novel crystal-growth process of a ferroelectric thin-film using platinum (Pt)-seed matrix is developed for dividing the nucleation and growth of PbZr0.52Ti0.48O3 (PZT), which cannot be observed in the classical nucleation and growth of PZT. Locating artificial nucleation seeds using Pt-seeds in a desirable position enables one to obtain a large single-grain PZT (~40 μm) that is large enough to fabricate a field-effect transistor (FET)-type FeRAM. The fabricated FeRAM with a Pt/PZT/ZrTiO4(ZTO)/p-Si structure showed a wide memory window (~1.8 V), low operation voltage (~6 V), ultra-fast Program/Erase (P/E) switching speed (~10-7 s), and a stable multibit operation controlled by local polarization. In addition, the FeRAM showed no degradation even after cycling the P/E more than 1011 times in all multibit states, and the retention time was expected to have a wide memory window even after 10 years in all multibit states. These characteristics show great potential for the multi-bit FeRAM, which is difficult to expect a reliable operation with large grain-boundaries.

  12. Materials selection for oxide-based resistive random access memories

    SciTech Connect

    Guo, Yuzheng; Robertson, John

    2014-12-01

    The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO{sub 2}, TiO{sub 2}, Ta{sub 2}O{sub 5}, and Al{sub 2}O{sub 3}, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta{sub 2}O{sub 5} RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.

  13. SiCOH-based resistive random access memory for backend of line compatible nonvolatile memory application

    NASA Astrophysics Data System (ADS)

    Zheng, Liang; Dai, Ya-Wei; Yu, Lin-Jie; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-04-01

    We investigated the resistive switching characteristics of a SiCOH low-k-material-based resistive random access memory (RRAM) in this study. This SiCOH-based RRAM is fully compatible with backend CMOS technology, which is extremely important for its applicability. The device demonstrated here had higher performance characteristics than a conventional SiO2-based RRAM, such as a higher ON/OFF ratio (around 102), and a higher cycling endurance in an ambient environment. Taken together, these characteristics make the device a promising candidate for next-generation nonvolatile applications.

  14. 0.6-1.0 V operation set/reset voltage (3 V) generator for three-dimensional integrated resistive random access memory and NAND flash hybrid solid-state drive

    NASA Astrophysics Data System (ADS)

    Tanaka, Masahiro; Hachiya, Shogo; Ishii, Tomoya; Ning, Sheyang; Tsurumi, Kota; Takeuchi, Ken

    2016-04-01

    A 0.6-1.0 V, 25.9 mm2 boost converter is proposed to generate resistive random access memory (ReRAM) write (set/reset) voltage for three-dimensional (3D) integrated ReRAM and NAND flash hybrid solid-state drive (SSD). The proposed boost converter uses an integrated area-efficient V BUF generation circuit to obtain short ReRAM sector write time, small circuit size, and small energy consumption simultaneously. In specific, the proposed boost converter reduces ReRAM sector write time by 65% compared with a conventional one-stage boost converter (Conventional 1) which uses 1.0 V operating voltage. On the other hand, by using the same ReRAM sector write time, the proposed boost converter reduces 49% circuit area and 46% energy consumption compared with a conventional two-stage boost converter (Conventional 2). In addition, by using the proposed boost converter, the operating voltage, V DD, can be reduced to 0.6 V. The lowest 159 nJ energy consumption can be obtained when V DD is 0.7 V.

  15. Accessibility versus Accuracy in Retrieving Spatial Memory: Evidence for Suboptimal Assumed Headings

    ERIC Educational Resources Information Center

    Yerramsetti, Ashok; Marchette, Steven A.; Shelton, Amy L.

    2013-01-01

    Orientation dependence in spatial memory has often been interpreted in terms of accessibility: Object locations are encoded relative to a reference orientation that affords the most accurate access to spatial memory. An open question, however, is whether people naturally use this "preferred" orientation whenever recalling the space. We…

  16. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems.

    PubMed

    Shehzad, Danish; Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models.

  17. Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems

    PubMed Central

    Bozkuş, Zeki

    2016-01-01

    Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models. PMID:27413363

  18. Review of Emerging New Solid-State Non-Volatile Memories

    NASA Astrophysics Data System (ADS)

    Fujisaki, Yoshihisa

    2013-04-01

    The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change random-access memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed.

  19. 75 FR 20564 - Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-20

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF COMMERCE International Trade Administration Dynamic Random Access Memory Semiconductors from the Republic of Korea... administrative review of the countervailing duty order on dynamic random access memory semiconductors from...

  20. Priming of transcriptional memory responses via the chromatin accessibility landscape in T cells

    PubMed Central

    Tu, Wen Juan; Hardy, Kristine; Sutton, Christopher R.; McCuaig, Robert; Li, Jasmine; Dunn, Jenny; Tan, Abel; Brezar, Vedran; Morris, Melanie; Denyer, Gareth; Lee, Sau Kuen; Turner, Stephen J.; Seddiki, Nabila; Smith, Corey; Khanna, Rajiv; Rao, Sudha

    2017-01-01

    Memory T cells exhibit transcriptional memory and “remember” their previous pathogenic encounter to increase transcription on re-infection. However, how this transcriptional priming response is regulated is unknown. Here we performed global FAIRE-seq profiling of chromatin accessibility in a human T cell transcriptional memory model. Primary activation induced persistent accessibility changes, and secondary activation induced secondary-specific opening of previously less accessible regions associated with enhanced expression of memory-responsive genes. Increased accessibility occurred largely in distal regulatory regions and was associated with increased histone acetylation and relative H3.3 deposition. The enhanced re-stimulation response was linked to the strength of initial PKC-induced signalling, and PKC-sensitive increases in accessibility upon initial stimulation showed higher accessibility on re-stimulation. While accessibility maintenance was associated with ETS-1, accessibility at re-stimulation-specific regions was linked to NFAT, especially in combination with ETS-1, EGR, GATA, NFκB, and NR4A. Furthermore, NFATC1 was directly regulated by ETS-1 at an enhancer region. In contrast to the factors that increased accessibility, signalling from bHLH and ZEB family members enhanced decreased accessibility upon re-stimulation. Interplay between distal regulatory elements, accessibility, and the combined action of sequence-specific transcription factors allows transcriptional memory-responsive genes to “remember” their initial environmental encounter. PMID:28317936

  1. Priming of transcriptional memory responses via the chromatin accessibility landscape in T cells.

    PubMed

    Tu, Wen Juan; Hardy, Kristine; Sutton, Christopher R; McCuaig, Robert; Li, Jasmine; Dunn, Jenny; Tan, Abel; Brezar, Vedran; Morris, Melanie; Denyer, Gareth; Lee, Sau Kuen; Turner, Stephen J; Seddiki, Nabila; Smith, Corey; Khanna, Rajiv; Rao, Sudha

    2017-03-20

    Memory T cells exhibit transcriptional memory and "remember" their previous pathogenic encounter to increase transcription on re-infection. However, how this transcriptional priming response is regulated is unknown. Here we performed global FAIRE-seq profiling of chromatin accessibility in a human T cell transcriptional memory model. Primary activation induced persistent accessibility changes, and secondary activation induced secondary-specific opening of previously less accessible regions associated with enhanced expression of memory-responsive genes. Increased accessibility occurred largely in distal regulatory regions and was associated with increased histone acetylation and relative H3.3 deposition. The enhanced re-stimulation response was linked to the strength of initial PKC-induced signalling, and PKC-sensitive increases in accessibility upon initial stimulation showed higher accessibility on re-stimulation. While accessibility maintenance was associated with ETS-1, accessibility at re-stimulation-specific regions was linked to NFAT, especially in combination with ETS-1, EGR, GATA, NFκB, and NR4A. Furthermore, NFATC1 was directly regulated by ETS-1 at an enhancer region. In contrast to the factors that increased accessibility, signalling from bHLH and ZEB family members enhanced decreased accessibility upon re-stimulation. Interplay between distal regulatory elements, accessibility, and the combined action of sequence-specific transcription factors allows transcriptional memory-responsive genes to "remember" their initial environmental encounter.

  2. Mapping virtual addresses to different physical addresses for value disambiguation for thread memory access requests

    DOEpatents

    Gala, Alan; Ohmacht, Martin

    2014-09-02

    A multiprocessor system includes nodes. Each node includes a data path that includes a core, a TLB, and a first level cache implementing disambiguation. The system also includes at least one second level cache and a main memory. For thread memory access requests, the core uses an address associated with an instruction format of the core. The first level cache uses an address format related to the size of the main memory plus an offset corresponding to hardware thread meta data. The second level cache uses a physical main memory address plus software thread meta data to store the memory access request. The second level cache accesses the main memory using the physical address with neither the offset nor the thread meta data after resolving speculation. In short, this system includes mapping of a virtual address to a different physical addresses for value disambiguation for different threads.

  3. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    SciTech Connect

    Saripalli, Ganesh

    2002-01-01

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35μ CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  4. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    SciTech Connect

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P.

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  5. Radiation dosimetry using three-dimensional optical random access memories

    NASA Technical Reports Server (NTRS)

    Moscovitch, M.; Phillips, G. W.

    2001-01-01

    Three-dimensional optical random access memories (3D ORAMs) are a new generation of high-density data storage devices. Binary information is stored and retrieved via a light induced reversible transformation of an ensemble of bistable photochromic molecules embedded in a polymer matrix. This paper describes the application of 3D ORAM materials to radiation dosimetry. It is shown both theoretically and experimentally, that ionizing radiation in the form of heavy charged particles is capable of changing the information originally stored on the ORAM material. The magnitude and spatial distribution of these changes are used as a measure of the absorbed dose, particle type and energy. The effects of exposure on 3D ORAM materials have been investigated for a variety of particle types and energies, including protons, alpha particles and 12C ions. The exposed materials are observed to fluoresce when exposed to laser light. The intensity and the depth of the fluorescence is dependent on the type and energy of the particle to which the materials were exposed. It is shown that these effects can be modeled using Monte Carlo calculations. The model provides a better understanding of the properties of these materials. which should prove useful for developing systems for charged particle and neutron dosimetry/detector applications. c2001 Published by Elsevier Science B.V.

  6. Adult Age Differences in Accessing and Retrieving Information from Long-Term Memory.

    ERIC Educational Resources Information Center

    Petros, Thomas V.; And Others

    1983-01-01

    Investigated adult age differences in accessing and retrieving information from long-term memory. Results showed that older adults (N=26) were slower than younger adults (N=35) at feature extraction, lexical access, and accessing category information. The age deficit was proportionally greater when retrieval of category information was required.…

  7. Direct Access by Spatial Position in Visual Memory. 1. Synopsis of Principal Findings.

    DTIC Science & Technology

    1986-01-20

    AiQi 218 DIRECT ACCESS BY SPATIAL POSITION IN VISUAL MEMORY 1 1/1 SYNOPSIS OF PRINCIPAL FINDINGS(U) PENNSYLVANIA UNIV PPHILADELPHIA S STERNBERG ET...IRR04204 RR04206-01 11 TITLE (Include SecuriY Claw ficat,@n) Direct Access by Spatial Position in Visual Memory: 1. Synopsis of Principal Findings 12...034 -amJanuary 20. 1986 , ? ’ I~ Direct Access by Spatial Position In Visual Memory: 1. Synopsis of Principal gfdings 1. Introduction In recent years

  8. All-Metal Magnetic RAM

    NASA Technical Reports Server (NTRS)

    Torok, E. J.; Spitzer, R.

    2000-01-01

    The factors that enter into the development of an all-metal, nonvolatile magnetic RAM, in which multilayer giant magnetoresistive films are used for all functions - storage, readout, and support electronics - are described. Four significant characteristics are expected to favor all-metal over hybrid magnetic RAM. First, silicon-technology fabrication requires a large number of masking steps, including complex ones such as ion implantation. Conversely, all-metal technology is inherently simple: fewer masking steps, no doping, scaling to lithographic limits, very little operating power. Second, the all-metal footprint is significantly smaller than the hybrid one. Third, an all-metal RAM is expected to be able to be miniaturized to lithographic limits; miniaturization of hybrid magnetic RAMs is likely to be limited by the semiconductor circuitry. Finally, semiconductor processing and magnetic processing in MRAM are done separately because the former requires high temperatures, whereas magnetic fabrication is a low-temperature process. By contrast, because both GMR electronics and the memory elements are made of the same materials, the two major components are deposited and patterned concurrently on the same substrate.

  9. Implementing a bubble memory hierarchy system

    NASA Technical Reports Server (NTRS)

    Segura, R.; Nichols, C. D.

    1979-01-01

    This paper reports on implementation of a magnetic bubble memory in a two-level hierarchial system. The hierarchy used a major-minor loop device and RAM under microprocessor control. Dynamic memory addressing, dual bus primary memory, and hardware data modification detection are incorporated in the system to minimize access time. It is the objective of the system to incorporate the advantages of bipolar memory with that of bubble domain memory to provide a smart, optimal memory system which is easy to interface and independent of user's system.

  10. Remote Memory Access Protocol Target Node Intellectual Property

    NASA Technical Reports Server (NTRS)

    Haddad, Omar

    2013-01-01

    The MagnetoSpheric Multiscale (MMS) mission had a requirement to use the Remote Memory Access Protocol (RMAP) over its SpaceWire network. At the time, no known intellectual property (IP) cores were available for purchase. Additionally, MMS preferred to implement the RMAP functionality with control over the low-level details of the design. For example, not all the RMAP standard functionality was needed, and it was desired to implement only the portions of the RMAP protocol that were needed. RMAP functionality had been previously implemented in commercial off-the-shelf (COTS) products, but the IP core was not available for purchase. The RMAP Target IP core is a VHDL (VHSIC Hardware Description Language description of a digital logic design suitable for implementation in an FPGA (field-programmable gate array) or ASIC (application-specific integrated circuit) that parses SpaceWire packets that conform to the RMAP standard. The RMAP packet protocol allows a network host to access and control a target device using address mapping. This capability allows SpaceWire devices to be managed in a standardized way that simplifies the hardware design of the device, as well as the development of the software that controls the device. The RMAP Target IP core has some features that are unique and not specified in the RMAP standard. One such feature is the ability to automatically abort transactions if the back-end logic does not respond to read/write requests within a predefined time. When a request times out, the RMAP Target IP core automatically retracts the request and returns a command response with an appropriate status in the response packet s header. Another such feature is the ability to control the SpaceWire node or router using RMAP transactions in the extended address range. This allows the SpaceWire network host to manage the SpaceWire network elements using RMAP packets, which reduces the number of protocols that the network host needs to support.

  11. In-Depth Analysis of Computer Memory Acquisition Software for Forensic Purposes.

    PubMed

    McDown, Robert J; Varol, Cihan; Carvajal, Leonardo; Chen, Lei

    2016-01-01

    The comparison studies on random access memory (RAM) acquisition tools are either limited in metrics or the selected tools were designed to be executed in older operating systems. Therefore, this study evaluates widely used seven shareware or freeware/open source RAM acquisition forensic tools that are compatible to work with the latest 64-bit Windows operating systems. These tools' user interface capabilities, platform limitations, reporting capabilities, total execution time, shared and proprietary DLLs, modified registry keys, and invoked files during processing were compared. We observed that Windows Memory Reader and Belkasoft's Live Ram Capturer leaves the least fingerprints in memory when loaded. On the other hand, ProDiscover and FTK Imager perform poor in memory usage, processing time, DLL usage, and not-wanted artifacts introduced to the system. While Belkasoft's Live Ram Capturer is the fastest to obtain an image of the memory, Pro Discover takes the longest time to do the same job.

  12. Memory-based parallel data output controller

    NASA Technical Reports Server (NTRS)

    Stattel, R. J.; Niswander, J. K. (Inventor)

    1984-01-01

    A memory-based parallel data output controller employs associative memories and memory mapping to decommutate multiple channels of telemetry data. The output controller contains a random access memory (RAM) which has at least as many address locations as there are channels. A word counter addresses the RAM which provides as it outputs an encoded peripheral device number and a MSB/LSB-first flag. The encoded device number and a bit counter address a second RAM which contains START and STOP flags to pick out the required bits from the specified word number. The LSB/MSB, START and STOP flags, along with the serial input digital data go to a control block which selectively fills a shift register used to drive the parallel data output bus.

  13. RAPID: A random access picture digitizer, display, and memory system

    NASA Technical Reports Server (NTRS)

    Yakimovsky, Y.; Rayfield, M.; Eskenazi, R.

    1976-01-01

    RAPID is a system capable of providing convenient digital analysis of video data in real-time. It has two modes of operation. The first allows for continuous digitization of an EIA RS-170 video signal. Each frame in the video signal is digitized and written in 1/30 of a second into RAPID's internal memory. The second mode leaves the content of the internal memory independent of the current input video. In both modes of operation the image contained in the memory is used to generate an EIA RS-170 composite video output signal representing the digitized image in the memory so that it can be displayed on a monitor.

  14. 77 FR 26789 - Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-07

    ... From the Federal Register Online via the Government Publishing Office ] INTERNATIONAL TRADE COMMISSION Certain Semiconductor Chips Having Synchronous Dynamic Random Access Memory Controllers and Products Containing Same; Determination Rescinding the Exclusion Order and Cease and Desist Orders...

  15. More than a feeling: Emotional cues impact the access and experience of autobiographical memories.

    PubMed

    Sheldon, Signy; Donahue, Julia

    2017-02-27

    Remembering is impacted by several factors of retrieval, including the emotional content of a memory cue. Here we tested how musical retrieval cues that differed on two dimensions of emotion-valence (positive and negative) and arousal (high and low)-impacted the following aspects of autobiographical memory recall: the response time to access a past personal event, the experience of remembering (ratings of memory vividness), the emotional content of a cued memory (ratings of event arousal and valence), and the type of event recalled (ratings of event energy, socialness, and uniqueness). We further explored how cue presentation affected autobiographical memory retrieval by administering cues of similar arousal and valence levels in a blocked fashion to one half of the tested participants, and randomly to the other half. We report three main findings. First, memories were accessed most quickly in response to musical cues that were highly arousing and positive in emotion. Second, we observed a relation between a cue and the elicited memory's emotional valence but not arousal; however, both the cue valence and arousal related to the nature of the recalled event. Specifically, high cue arousal led to lower memory vividness and uniqueness ratings, but cues with both high arousal and positive valence were associated with memories rated as more social and energetic. Finally, cue presentation impacted both how quickly and specifically memories were accessed and how cue valence affected the memory vividness ratings. The implications of these findings for views of how emotion directs the access to memories and the experience of remembering are discussed.

  16. Development of Curie point switching for thin film, random access, memory device

    NASA Technical Reports Server (NTRS)

    Lewicki, G. W.; Tchernev, D. I.

    1967-01-01

    Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

  17. Hybrid Josephson-CMOS Random Access Memory with Interfacing to Josephson Digital Circuits

    DTIC Science & Technology

    2013-10-16

    as reliable high-speed Josephson voltage drivers, Superconductor Science and Technology, (01 2013): 1. doi: TOTAL: 4 (b) Papers published in non...Theodore Van Duzer, ISEC, Washington, DC 2011 "Hybrid Josephson-CMOS Random Access Memory, T. Van Duzer, US Workshop on Superconductor Electronics: Devices...Proceeding publications (other than abstracts): Received Paper 08/22/2013 2.00 Thomas Ortlepp. Vortex transitional superconductor random access memory

  18. FPS-RAM: Fast Prefix Search RAM-Based Hardware for Forwarding Engine

    NASA Astrophysics Data System (ADS)

    Zaitsu, Kazuya; Yamamoto, Koji; Kuroda, Yasuto; Inoue, Kazunari; Ata, Shingo; Oka, Ikuo

    Ternary content addressable memory (TCAM) is becoming very popular for designing high-throughput forwarding engines on routers. However, TCAM has potential problems in terms of hardware and power costs, which limits its ability to deploy large amounts of capacity in IP routers. In this paper, we propose new hardware architecture for fast forwarding engines, called fast prefix search RAM-based hardware (FPS-RAM). We designed FPS-RAM hardware with the intent of maintaining the same search performance and physical user interface as TCAM because our objective is to replace the TCAM in the market. Our RAM-based hardware architecture is completely different from that of TCAM and has dramatically reduced the costs and power consumption to 62% and 52%, respectively. We implemented FPS-RAM on an FPGA to examine its lookup operation.

  19. 75 FR 44283 - In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-28

    ... COMMISSION In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of a Commission Determination Not To Review an Initial Determination... within the United States after importation of certain dynamic random access memory semiconductors...

  20. Accessing Information in Working Memory: Can the Focus of Attention Grasp Two Elements at the Same Time?

    ERIC Educational Resources Information Center

    Oberauer, Klaus; Bialkova, Svetlana

    2009-01-01

    Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a spatial task investigate time demands for successive…

  1. Single Event Upset Behavior of CMOS Static RAM Cells

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo; Jeppson, Kjell O.; Buehler, Martin G.

    1993-01-01

    An improved state-space analysis of the CMOS static RAM cell is presented. Introducing theconcept of the dividing line, the critical charge for heavy-ion-induced upset of memory cells can becalculated considering symmetrical as well as asymmetrical capacitive loads. From the criticalcharge, the upset-rate per bit-day for static RAMs can be estimated.

  2. High speed magneto-resistive random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1992-01-01

    A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

  3. Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

    NASA Astrophysics Data System (ADS)

    Arita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2015-11-01

    In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small area around the filament. With repeated switching operations and increasing operational current, the WOx/electrode interfaces became indistinct. At the same time, the resistance of the off-state gradually decreased. This is thought to be caused by Cu condensation at the interfaces because of leakage current through the area other than through the filament. This will lead to device degradation through mechanisms such as endurance failure. This is the first accelerated aging test of ReRAM achieved using in-situ TEM.

  4. Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

    PubMed Central

    Arita, Masashi; Takahashi, Akihito; Ohno, Yuuki; Nakane, Akitoshi; Tsurumaki-Fukuchi, Atsushi; Takahashi, Yasuo

    2015-01-01

    In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small area around the filament. With repeated switching operations and increasing operational current, the WOx/electrode interfaces became indistinct. At the same time, the resistance of the off-state gradually decreased. This is thought to be caused by Cu condensation at the interfaces because of leakage current through the area other than through the filament. This will lead to device degradation through mechanisms such as endurance failure. This is the first accelerated aging test of ReRAM achieved using in-situ TEM. PMID:26611856

  5. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Wang, Chundong; Zhou, Li; Yan, Yan; Zhuang, Jiaqing; Sun, Qijun; Zhang, Hua; Roy, V A L

    2016-01-20

    Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics.

  6. Asymmetrical access to color and location in visual working memory.

    PubMed

    Rajsic, Jason; Wilson, Daryl E

    2014-10-01

    Models of visual working memory (VWM) have benefitted greatly from the use of the delayed-matching paradigm. However, in this task, the ability to recall a probed feature is confounded with the ability to maintain the proper binding between the feature that is to be reported and the feature (typically location) that is used to cue a particular item for report. Given that location is typically used as a cue-feature, we used the delayed-estimation paradigm to compare memory for location to memory for color, rotating which feature was used as a cue and which was reported. Our results revealed several novel findings: 1) the likelihood of reporting a probed object's feature was superior when reporting location with a color cue than when reporting color with a location cue; 2) location report errors were composed entirely of swap errors, with little to no random location reports; and 3) both colour and location reports greatly benefitted from the presence of nonprobed items at test. This last finding suggests that it is uncertainty over the bindings between locations and colors at memory retrieval that drive swap errors, not at encoding. We interpret our findings as consistent with a representational architecture that nests remembered object features within remembered locations.

  7. PREFACE: Emerging non-volatile memories: magnetic and resistive technologies Emerging non-volatile memories: magnetic and resistive technologies

    NASA Astrophysics Data System (ADS)

    Dieny, B.; Jagadish, Chennupati

    2013-02-01

    In 2010, the International Technology Roadmap for Semiconductors (ITRS) published an assessment of the potential and maturity of selected emerging research on memory technologies. Eight different technologies of non-volatile memories were compared (ferroelectric gate field-effect transistor, nano-electro-mechanical switch, spin-transfer torque random access memories (STTRAM), various types of resistive RAM, in particular redox RAM, nanothermal phase change RAM, electronic effects RAM, macromolecular memories and molecular RAM). In this report, spin-transfer torque MRAM and redox RRAM were identified as two emerging memory technologies recommended for accelerated research and development leading to scaling and commercialization of non-volatile RAM to and beyond the 16nm generation. Nowadays, there is an intense research and development effort in microelectronics on these two technologies, one based on spintronic phenomena (tunnel magnetoresistance and spin-transfer torque), the other based on migration of vacancies or ions in an insulating matrix driven by oxydo-reduction potentials. Both technologies could be used for standalone or embedded applications. In this context, it appeared timely to publish a cluster of review articles related to these two technologies. In this cluster, the first two articles introduce the general principles of spin-transfer torque RAM and of thermally assisted RAM. The third presents a broader range of applications for this integrated CMOS/magnetic tunnel junction technology for low-power electronics. The fourth paper presents more advanced research on voltage control of magnetization switching with the aim of dramatically reducing the write energy in MRAM. The last two papers deal with two categories of resistive RAM, one based on the migration of cations, the other one based on nanowires. We thank all the authors and reviewers for their contribution to this cluster issue. Our special thanks are due to Dr Olivia Roche, Publisher, and Dr

  8. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    SciTech Connect

    Ando, K. Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-05-07

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

  9. Symmetric Data Objects and Remote Memory Access Communication for Fortran 95-Applications.

    SciTech Connect

    Nieplocha, Jarek; Baxter, Douglas J.; Tipparaju, Vinod; Rasmussen, Craig; Numrich, Robert W.

    2005-08-01

    Symmetric data objects have been introduced by Cray Inc. in context of SHMEM remote memory access communication on Cray T3D/E systems and later adopted by SGI for their Origin servers. Symmetric data objects greatly simplify parallel programming by allowing to reference remote instance of a data structure by specifying address of the local counterpart. The current paper describes how symmetric data objects and remote memory access communication could be implemented in Fortran-95 without requiring specialized hardware or compiler support. NAS Multi-Grid parallel benchmark was used as an application example and demonstrated competitive performance to the standard MPI implementation

  10. Gallium Arsenide Dynamic Random Access Memory Support Circuitry

    DTIC Science & Technology

    1993-03-01

    several reasons for this. the first and foremost is cost. Millions of dollars are required to "tool up" to fabricate ICs. While Si ICs are in tremendous...disadvantages to GaAs digital IC fabrication. First , the present density of the commercially available GaAs ICs is much less than those produced in Si...is accomplished is a similar but slightly different manner. Writing requires data so the first step (given the correct status of the memory busy signal

  11. Size effect of nano scale phase change random access memory.

    PubMed

    Son, Ji Hoon; Choi, HongKyw; Jang, Nakwon; Kim, Hong Seung; Yi, Dong Young; Lee, Seong Hwan

    2010-05-01

    In this paper, we have investigated the size effect of nano scale PRAM using three-dimensional finite element analysis tool. The reset current and temperature profile of PRAM cells with top and bottom electrode contact hole size were calculated by the numerical method. And temperature profile of PRAM unit cell with size and thickness of GST thin film was simulated. As top electrode contact size was smaller, reset current decreased. But these variations couldn't affect to operate memory. On the other hand, as bottom electrode contact size was smaller, reset current abruptly decreased.

  12. Overview of emerging nonvolatile memory technologies

    PubMed Central

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  13. Electrical Evaluation of RCA MWS5501D Random Access Memory, Volume 2, Appendix a

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. The address access time, address readout time, the data hold time, and the data setup time are some of the results surveyed.

  14. Ram Burn Observations (RAMBO)

    NASA Technical Reports Server (NTRS)

    2002-01-01

    Ram Burn Observations (RAMBO) is a Department of Defense experiment that observes shuttle Orbital Maneuvering System engine burns for the purpose of improving plume models. On STS-107 the appropriate sensors will observe selected rendezvous and orbit adjust burns.

  15. Ram jet engine

    SciTech Connect

    Crispin, B.; Pohl, W.D.; Thomaier, D.; Voss, N.

    1983-11-29

    In a ram jet engine, a tubular combustion chamber is divided into a flame chamber followed by a mixing chamber. The ram air is supplied through intake diffusers located on the exterior of the combustion chamber. The intake diffusers supply combustion air directly into the flame chamber and secondary air is conveyed along the exterior of the combustion chambers and then supplied directly into the mixing chamber.

  16. Radiation-hardened nonvolatile MNOS RAM

    SciTech Connect

    Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

    1983-01-01

    A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.

  17. A radiation hardened nonvolatile MNOS RAM

    NASA Astrophysics Data System (ADS)

    Wrobel, T. F.; Dodson, W. H.; Hash, G. L.; Jones, R. V.; Nasby, R. D.; Olson, R. J.

    1983-12-01

    A radiation hardened nonvolatile MNOS RAM (SA2998) is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The device requires +10 V and +25 V for operation. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.

  18. Making Physical Activity Accessible to Older Adults with Memory Loss: A Feasibility Study

    ERIC Educational Resources Information Center

    Logsdon, Rebecca G.; McCurry, Susan M.; Pike, Kenneth C.; Teri, Linda

    2009-01-01

    Purpose: For individuals with mild cognitive impairment (MCI), memory loss may prevent successful engagement in exercise, a key factor in preventing additional disability. The Resources and Activities for Life Long Independence (RALLI) program uses behavioral principles to make exercise more accessible for these individuals. Exercises are broken…

  19. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2013-09-03

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  20. Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A; Mamidala, Amith R

    2014-02-11

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  1. Ram-jet Performance

    NASA Technical Reports Server (NTRS)

    Cervenko, A. J.; Friedman, R.

    1956-01-01

    The ram jet is basically one of the most dimple types of aircraft engine. It consists only of an inlet diffuser, a combustion system, and an exit nozzle. A typical ram-jet configuration is shown in figure 128. The engine operates on the Brayton cycle, and ideal cycle efficiency depends only on the ratio of engine to ambient pressure. The increased, engine pressures are obtained by ram action alone, and for this reason the ram jet has zero thrust at zero speed. Therefore, ram-jet-powered aircraft must be boosted to flight speeds close to a Mach number of 1.0 before appreciable thrust is generated by the engine. Since pressure increases are obtained by ram action alone, combustor-inlet pressures and temperatures are controlled by the flight speed, the ambient atmospheric condition, and by the efficiency of the inlet diffuser. These pressures and temperatures, as functions of flight speed and altitude, are shown in figure 129 for the NACA standard atmosphere and for practical values of diffuser efficiency. It can be seen that very wide ranges of combustor-inlet temperatures and pressures may be encountered over the ranges of flight velocity and altitude at which ram jets may be operated. Combustor-inlet temperatures from 500 degrees to 1500 degrees R and inlet pressures from 5 to 100 pounds per square inch absolute represent the approximate ranges of interest in current combustor development work. Since the ram jet has no moving parts in the combustor outlet, higher exhaust-gas temperatures than those used in current turbojets are permissible. Therefore, fuel-air ratios equivalent to maximum rates of air specific impulse or heat release can be used, and, for hydrocarbon fuels, this weight ratio is about 0.070. Lower fuel-air ratios down to about 0.015 may also be required to permit efficient cruise operation. This fuel-air-ratio range of 0.015 to 0.070 used in ram jets can be compared with the fuel-air ratios up to 0.025 encountered in current turbojets. Ram

  2. Shared direct memory access on the Explorer 2-LX

    NASA Technical Reports Server (NTRS)

    Musgrave, Jeffrey L.

    1990-01-01

    Advances in Expert System technology and Artificial Intelligence have provided a framework for applying automated Intelligence to the solution of problems which were generally perceived as intractable using more classical approaches. As a result, hybrid architectures and parallel processing capability have become more common in computing environments. The Texas Instruments Explorer II-LX is an example of a machine which combines a symbolic processing environment, and a computationally oriented environment in a single chassis for integrated problem solutions. This user's manual is an attempt to make these capabilities more accessible to a wider range of engineers and programmers with problems well suited to solution in such an environment.

  3. Making working memory work: the effects of extended practice on focus capacity and the processes of updating, forward access, and random access.

    PubMed

    Price, John M; Colflesh, Gregory J H; Cerella, John; Verhaeghen, Paul

    2014-05-01

    We investigated the effects of 10h of practice on variations of the N-Back task to investigate the processes underlying possible expansion of the focus of attention within working memory. Using subtractive logic, we showed that random access (i.e., Sternberg-like search) yielded a modest effect (a 50% increase in speed) whereas the processes of forward access (i.e., retrieval in order, as in a standard N-Back task) and updating (i.e., changing the contents of working memory) were executed about 5 times faster after extended practice. We additionally found that extended practice increased working memory capacity as measured by the size of the focus of attention for the forward-access task, but not for variations where probing was in random order. This suggests that working memory capacity may depend on the type of search process engaged, and that certain working-memory-related cognitive processes are more amenable to practice than others.

  4. Memory Load and Dump

    NASA Astrophysics Data System (ADS)

    Welty, Alan

    2009-07-01

    This proposal is a test and verification of the STIS dump of memory capability.Areas of Control Section {CS} to dump include: EDAC RAM, EEPROM, and CS PROM {with the CS in Operate}. Areas of MIE memory to dump include: MIE RAM and MIE PROM {with the MIE in Operate}. Note that the MIE memory must first be copied to CS buffer RAM as images, which are then dumped.Supports Activity STIS-02

  5. A new laterally conductive bridge random access memory by fully CMOS logic compatible process

    NASA Astrophysics Data System (ADS)

    Hsieh, Min-Che; Chin, Yung-Wen; Lin, Yu-Cheng; Chih, Yu-Der; Tsai, Kan-Hsueh; Tsai, Ming-Jinn; King, Ya-Chin; Lin, Chrong Jung

    2014-01-01

    This paper proposes a novel laterally conductive bridge random access memory (L-CBRAM) module using a fully CMOS logic compatible process. A contact buffer layer between the poly-Si and contact plug enables the lateral Ti-based atomic layer to provide on/off resistance ratio via bipolar operations. The proposed device reached more than 100 pulse cycles with an on/off ratio over 10 and very stable data retention under high temperature operations. These results make this Ti-based L-CBRAM cell a promising solution for advanced embedded multi-time programmable (MTP) memory applications.

  6. Effects of erbium doping of indium tin oxide electrode in resistive random access memory

    NASA Astrophysics Data System (ADS)

    Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-03-01

    Identical insulators and bottom electrodes were fabricated and capped by an indium tin oxide (ITO) film, either undoped or doped with erbium (Er), as a top electrode. This distinctive top electrode dramatically altered the resistive random access memory (RRAM) characteristics, for example, lowering the operation current and enlarging the memory window. In addition, the RESET voltage increased, whereas the SET voltage remained almost the same. A conduction model of Er-doped ITO is proposed through current-voltage (I-V) measurement and current fitting to explain the resistance switching mechanism of Er-doped ITO RRAM and is confirmed by material analysis and reliability tests.

  7. Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Peipei; Shang, Dashan; Shen, Jianxin; Chai, Yisheng; Yang, Chuansen; Zhai, Kun; Cong, Junzhuang; Shen, Shipeng; Sun, Young

    2016-12-01

    Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7 V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices.

  8. Multiple number and letter comparison: directionality and accessibility in numeric and alphabetic memories.

    PubMed

    Jou, Jerwen

    2003-01-01

    In 3 experiments, subjects made comparativejudgments on a set of 2 numbers or letters, 3 numbers or letters, or 5 numbers or letters. Numeric and alphabetic serial order memories were contrasted. Three aspects of serial order memory processes were identified: computational complexity, directionality, and accessibility. Computational complexity is the number of algorithmic steps involved in identifying a target. Directional bias is measured as the speed differences in identifying serial targets of equal computational complexity in a stimulus array. Memory accessibility is measured as the numeric and alphabetic serial position effects. Subjects had a slight directional bias favoring backward ordering for single digits but no bias in 2-digit number ordering, in contrast to a strong forward directional advantage in letter ordering. The speed of number access was found to steadily and evenly decrease along the numeric scale, in contrast to a systematic pattern of variations in alphabet access along the alphabetic scale. Finally, the middle item effect (the middle item in a multi-item array is identified most slowly) found in Jou's (1997) multiple-letter comparison study was generalized to numbers.

  9. Ram and buck management.

    PubMed

    Ridler, A L; Smith, S L; West, D M

    2012-02-01

    Careful management is necessary to ensure the reproductive success in any small ruminant farm and to maximise the productive longevity of rams and bucks. Rams and bucks are frequently overlooked outside of the breeding period, but year-round attention to nutrition, parasite control and general disease control is important in keeping them healthy and sound for breeding. Pre-mating soundness examinations are an inexpensive and relatively easy way to assess the potential ability of a ram or buck to perform during the breeding period and should be incorporated annually into the management of any flock. During the breeding period, careful thought should be given to the appropriate use of males, and the effectiveness of mating should be monitored.

  10. Memory-based frame synchronizer. [for digital communication systems

    NASA Technical Reports Server (NTRS)

    Stattel, R. J.; Niswander, J. K. (Inventor)

    1981-01-01

    A frame synchronizer for use in digital communications systems wherein data formats can be easily and dynamically changed is described. The use of memory array elements provide increased flexibility in format selection and sync word selection in addition to real time reconfiguration ability. The frame synchronizer comprises a serial-to-parallel converter which converts a serial input data stream to a constantly changing parallel data output. This parallel data output is supplied to programmable sync word recognizers each consisting of a multiplexer and a random access memory (RAM). The multiplexer is connected to both the parallel data output and an address bus which may be connected to a microprocessor or computer for purposes of programming the sync word recognizer. The RAM is used as an associative memory or decorder and is programmed to identify a specific sync word. Additional programmable RAMs are used as counter decoders to define word bit length, frame word length, and paragraph frame length.

  11. Shape memory alloy fixator system for suturing tissue in minimal access surgery.

    PubMed

    Xu, W; Frank, T G; Stockham, G; Cuschieri, A

    1999-01-01

    A new technique for suturing human tissue is described in which tissue closure is achieved by means of small fixators made from shape memory alloy. The aim of the development is to provide an alternative to thread suturing in minimal access surgery, which is quicker and requires less skill to achieve the required suturing quality. The design of the fixators is described in terms of the thermal shape recovery of shape memory alloy and a novel form of finite element analysis, which uses a nonlinear elastic element for the material property. Thermal analysis of the fixators and surrounding tissue is used to predict the temperature distribution during and after the application of electric current heating. This was checked in an in vitro experiment, which confirmed that deployment caused no detectable collateral damage to surrounding tissue. In vivo animal studies on the use of the shape memory alloy fixator for suturing tissue are ongoing to establish safety and healing effects.

  12. Design of Unstructured Adaptive (UA) NAS Parallel Benchmark Featuring Irregular, Dynamic Memory Accesses

    NASA Technical Reports Server (NTRS)

    Feng, Hui-Yu; VanderWijngaart, Rob; Biswas, Rupak; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We describe the design of a new method for the measurement of the performance of modern computer systems when solving scientific problems featuring irregular, dynamic memory accesses. The method involves the solution of a stylized heat transfer problem on an unstructured, adaptive grid. A Spectral Element Method (SEM) with an adaptive, nonconforming mesh is selected to discretize the transport equation. The relatively high order of the SEM lowers the fraction of wall clock time spent on inter-processor communication, which eases the load balancing task and allows us to concentrate on the memory accesses. The benchmark is designed to be three-dimensional. Parallelization and load balance issues of a reference implementation will be described in detail in future reports.

  13. The Ram's Horn.

    ERIC Educational Resources Information Center

    Rassias, John A., Ed.; And Others

    1983-01-01

    The summer-fall and winter-spring numbers of the journal, "The Ram's Horn," contain these articles: "The Text as Dramatic Departure"; "The Dartmouth Language Outreach Approach to Spanish for Police Action"; "The Dartmouth Intensive Language Model (DILM) in Florida: John Rassias with High School Teachers";…

  14. Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 4, Appendix C

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Statistical analysis data is supplied along with write pulse width, read cycle time, write cycle time, and chip enable time data.

  15. Immigration, language proficiency, and autobiographical memories: Lifespan distribution and second-language access.

    PubMed

    Esposito, Alena G; Baker-Ward, Lynne

    2016-08-01

    This investigation examined two controversies in the autobiographical literature: how cross-language immigration affects the distribution of autobiographical memories across the lifespan and under what circumstances language-dependent recall is observed. Both Spanish/English bilingual immigrants and English monolingual non-immigrants participated in a cue word study, with the bilingual sample taking part in a within-subject language manipulation. The expected bump in the number of memories from early life was observed for non-immigrants but not immigrants, who reported more memories for events surrounding immigration. Aspects of the methodology addressed possible reasons for past discrepant findings. Language-dependent recall was influenced by second-language proficiency. Results were interpreted as evidence that bilinguals with high second-language proficiency, in contrast to those with lower second-language proficiency, access a single conceptual store through either language. The final multi-level model predicting language-dependent recall, including second-language proficiency, age of immigration, internal language, and cue word language, explained ¾ of the between-person variance and (1)/5 of the within-person variance. We arrive at two conclusions. First, major life transitions influence the distribution of memories. Second, concept representation across multiple languages follows a developmental model. In addition, the results underscore the importance of considering language experience in research involving memory reports.

  16. Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

    NASA Astrophysics Data System (ADS)

    Banerjee, Writam; Lu, Nianduan; Li, Ling; Sun, Pengxiao; Liu, Qi; Lv, Hangbing; Long, Shibing; Liu, Ming

    2015-03-01

    Retraction of `High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory' by Writam Banerjee et al., Nanoscale, 2014, advance article (C4NR05077K)

  17. Sparse distributed memory: Principles and operation

    NASA Technical Reports Server (NTRS)

    Flynn, M. J.; Kanerva, P.; Bhadkamkar, N.

    1989-01-01

    Sparse distributed memory is a generalized random access memory (RAM) for long (1000 bit) binary words. Such words can be written into and read from the memory, and they can also be used to address the memory. The main attribute of the memory is sensitivity to similarity, meaning that a word can be read back not only by giving the original write address but also by giving one close to it as measured by the Hamming distance between addresses. Large memories of this kind are expected to have wide use in speech recognition and scene analysis, in signal detection and verification, and in adaptive control of automated equipment, in general, in dealing with real world information in real time. The memory can be realized as a simple, massively parallel computer. Digital technology has reached a point where building large memories is becoming practical. Major design issues were resolved which were faced in building the memories. The design is described of a prototype memory with 256 bit addresses and from 8 to 128 K locations for 256 bit words. A key aspect of the design is extensive use of dynamic RAM and other standard components.

  18. Sparse distributed memory prototype: Principles of operation

    NASA Technical Reports Server (NTRS)

    Flynn, Michael J.; Kanerva, Pentti; Ahanin, Bahram; Bhadkamkar, Neal; Flaherty, Paul; Hickey, Philip

    1988-01-01

    Sparse distributed memory is a generalized random access memory (RAM) for long binary words. Such words can be written into and read from the memory, and they can be used to address the memory. The main attribute of the memory is sensitivity to similarity, meaning that a word can be read back not only by giving the original right address but also by giving one close to it as measured by the Hamming distance between addresses. Large memories of this kind are expected to have wide use in speech and scene analysis, in signal detection and verification, and in adaptive control of automated equipment. The memory can be realized as a simple, massively parallel computer. Digital technology has reached a point where building large memories is becoming practical. The research is aimed at resolving major design issues that have to be faced in building the memories. The design of a prototype memory with 256-bit addresses and from 8K to 128K locations for 256-bit words is described. A key aspect of the design is extensive use of dynamic RAM and other standard components.

  19. Encoding and Retrieval Processes Involved in the Access of Source Information in the Absence of Item Memory

    ERIC Educational Resources Information Center

    Ball, B. Hunter; DeWitt, Michael R.; Knight, Justin B.; Hicks, Jason L.

    2014-01-01

    The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were "related" to the target item but never actually studied.…

  20. Daily Access to Sucrose Impairs Aspects of Spatial Memory Tasks Reliant on Pattern Separation and Neural Proliferation in Rats

    ERIC Educational Resources Information Center

    Reichelt, Amy C.; Morris, Margaret J.; Westbrook, Reginald Frederick

    2016-01-01

    High sugar diets reduce hippocampal neurogenesis, which is required for minimizing interference between memories, a process that involves "pattern separation." We provided rats with 2 h daily access to a sucrose solution for 28 d and assessed their performance on a spatial memory task. Sucrose consuming rats discriminated between objects…

  1. Origin of the OFF state variability in ReRAM cells

    NASA Astrophysics Data System (ADS)

    Salaoru, Iulia; Khiat, Ali; Li, Qingjiang; Berdan, Radu; Papavassiliou, Christos; Prodromakis, Themistoklis

    2014-04-01

    This work exploits the switching dynamics of nanoscale resistive random access memory (ReRAM) cells with particular emphasis on the origin of the observed variability when cells are consecutively cycled/programmed at distinct memory states. It is demonstrated that this variance is a common feature of all ReRAM elements and is ascribed to the formation and rupture of conductive filaments that expand across the active core, independently of the material employed as the active switching core, the causal physical switching mechanism, the switching mode (bipolar/unipolar) or even the unit cells' dimensions. Our hypothesis is supported through both experimental and theoretical studies on TiO2 and In2O3 : SnO2 (ITO) based ReRAM cells programmed at three distinct resistive states. Our prototypes employed TiO2 or ITO active cores over 5 × 5 µm2 and 100 × 100 µm2 cell areas, with all tested devices demonstrating both unipolar and bipolar switching modalities. In the case of TiO2-based cells, the underlying switching mechanism is based on the non-uniform displacement of ionic species that foster the formation of conductive filaments. On the other hand, the resistive switching observed in the ITO-based devices is considered to be due to a phase change mechanism. The selected experimental parameters allowed us to demonstrate that the observed programming variance is a common feature of all ReRAM devices, proving that its origin is dependent upon randomly oriented local disorders within the active core that have a substantial impact on the overall state variance, particularly for high-resistive states.

  2. Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

    NASA Astrophysics Data System (ADS)

    Sun, Jonathan Z.

    2016-10-01

    Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

  3. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

    PubMed Central

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K.

    2016-01-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data. PMID:27245099

  4. Self-assembled tin dioxide for forming-free resistive random-access memory application

    NASA Astrophysics Data System (ADS)

    Hong, Ying-Jhan; Wang, Tsang-Hsuan; Wei, Shih-Yuan; Chang, Pin; Yew, Tri-Rung

    2016-06-01

    A novel resistive switching structure, tin-doped indium oxide (ITO)/SnO2- x (defined as SnO2 with oxygen vacancies)/SnS was demonstrated with a set voltage of 0.38 V, a reset voltage of -0.15 V, a ratio of high resistance to low resistance of 544, and forming-free and nonlinear current-voltage (I-V) characteristics. The interface of the ITO and the self-assembled SnO2- x contributed to the resistive switching behavior. This device showed great potential for resistive random access memory (RRAM) application and solving the sneak path problem in cross-bar memory arrays. Furthermore, a nanostructured resistive switching device was demonstrated successfully.

  5. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

    PubMed Central

    Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

    2011-01-01

    The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

  6. Soft errors in commercial off-the-shelf static random access memories

    NASA Astrophysics Data System (ADS)

    Dilillo, L.; Tsiligiannis, G.; Gupta, V.; Bosser, A.; Saigne, F.; Wrobel, F.

    2017-01-01

    This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on static random access memory (SRAM). We detailed irradiation test techniques and results from irradiation experiments with several types of particles. Two commercial SRAMs, in 90 and 65 nm technology nodes, were considered as case studies. Besides the basic static and dynamic test modes, advanced stimuli for the irradiation tests were introduced, as well as statistical post-processing techniques allowing for deeper analysis of the correlations between bit-flip cross-sections and design/architectural characteristics of the memory device. Further insight is provided on the response of irradiated stacked layer devices and on the use of characterized SRAM devices as particle detectors.

  7. Memristor memory element based on ZnO thin film structures

    NASA Astrophysics Data System (ADS)

    Poghosyan, A. R.; Elbakyan, E. Y.; Guo, R.; Hovsepyan, R. K.

    2015-08-01

    The memristor element for random access memory (resistance random access memory - ReRAM) was developed and investigated. The developed structure consists of a Schottky diode (1D) based on Pt/ZnO:Ga/ZnO/Pt heterostructure and a memristor (1R) based on Pt/ZnO:Ga/ZnO/ZnO:Li/Pt heterostructure. Thus the unipolar memristor memory element of 1D1R type was obtained. The heterostructures were produced by the electron-beam vacuum deposition method. The laboratory samples of the memory elements were prepared and their characteristics were studied. The proposed device has a high stability and withstands 1000 switching cycles without derating.

  8. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    NASA Technical Reports Server (NTRS)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  9. Hydrogen doping in HfO{sub 2} resistance change random access memory

    SciTech Connect

    Duncan, D.; Magyari-Köpe, B.; Nishi, Y.

    2016-01-25

    The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO{sub 2} resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

  10. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    SciTech Connect

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-07

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  11. Development and process control of magnetic tunnel junctions for magnetic random access memory devices

    NASA Astrophysics Data System (ADS)

    Kula, Witold; Wolfman, Jerome; Ounadjela, Kamel; Chen, Eugene; Koutny, William

    2003-05-01

    We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ˜40% at 300 mV, resistance-area product (RA) ˜1-3 kΩ μm2, low intrinsic interlayer coupling (Hin) ˜2-3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal-oxide-semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques.

  12. Temperature effects on failure and annealing behavior in dynamic random access memories

    NASA Astrophysics Data System (ADS)

    Wilkin, N. D.; Self, C. T.

    1982-12-01

    Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finally a description of the test instrumentation and irradiation procedures are given.

  13. A stochastic simulation method for the assessment of resistive random access memory retention reliability

    SciTech Connect

    Berco, Dan Tseng, Tseung-Yuen

    2015-12-21

    This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO{sub 2} device with a double layer ZnO/ZrO{sub 2} one, and obtain results which are in good agreement with experimental data.

  14. Low power consumption resistance random access memory with Pt/InOx/TiN structure

    NASA Astrophysics Data System (ADS)

    Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn

    2013-09-01

    In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption.

  15. One electron-controlled multiple-valued dynamic random-access-memory

    NASA Astrophysics Data System (ADS)

    Kye, H. W.; Song, B. N.; Lee, S. E.; Kim, J. S.; Shin, S. J.; Choi, J. B.; Yu, Y.-S.; Takahashi, Y.

    2016-02-01

    We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET). The gate of a SET is designed to be connected to a plurality of DRAM unit cells that are arrayed at intersections of word lines and bitlines. In this SET-DRAM hybrid scheme, the multiple switching characteristics of SET enables multiple value data stored in a DRAM unit cell, and this increases the storage functionality of the device. Moreover, since refreshing data requires only a small amount of SET driving current, this enables device operating with low standby power consumption.

  16. Random access memory immune to single event upset using a T-resistor

    DOEpatents

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  17. A random access memory immune to single event upset using a T-Resistor

    DOEpatents

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  18. TiO2 thin film based transparent flexible resistive switching random access memory

    NASA Astrophysics Data System (ADS)

    Pham, Kim Ngoc; Dung Hoang, Van; Tran, Cao Vinh; Thang Phan, Bach

    2016-03-01

    In our work we have fabricated TiO2 based resistive switching devices both on transparent substrates (ITO, IGZO/glass) and transparent flexible substrate (ITO/PET). All devices demonstrate the reproducibility of forming free bipolar resistive switching with high transparency in the visible light range (∼80% at the wavelength of 550 nm). Particularly, transparent and flexible device exhibits stable resistive switching performance at the initial state (flat) and even after bending state up to 500 times with curvature radius of 10% compared to flat state. The achieved characteristics of resistive switching of TiO2 thin films seem to be promising for transparent flexible random access memory.

  19. Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory

    NASA Astrophysics Data System (ADS)

    Bae, Junsoo; Hwang, Kyuman; Park, Kwangho; Jeon, Seongbu; Kang, Dae-hwan; Park, Soonoh; Ahn, Juhyeon; Kim, Seoksik; Jeong, Gitae; Chung, Chilhee

    2011-04-01

    The cell failures after cycling endurance in phase-change random access memory (PRAM) have been classified into three groups, which have been analyzed by transmission electron microscopy (TEM). Both stuck reset of the set state (D0) and stuck set of the reset state (D1) are due to a void created inside GeSbTe (GST) film or thereby lowering density of GST film. The decrease of the both set and reset resistances that leads to the tails from the reset distribution are induced from the Sb increase with cycles.

  20. Load and dump onboard memory

    NASA Astrophysics Data System (ADS)

    Welty, Alan

    2009-07-01

    This proposal is a test and verification of the ACS dump of memory capability.Areas of Control Section {CS} to dump include: EDAC RAM, EEPROM, and CS PROM {with the CS in Operate}. Areas of MIE memory to dump include: MIE RAM and MIE PROM {with the MIE in Operate}. Note that the MIE memory must first be copied to CS buffer RAM as images, which are then dumped.Supports Activity ACS-01

  1. Correlation between static random access memory power-up state and transistor variation

    NASA Astrophysics Data System (ADS)

    Takeuchi, Kiyoshi; Mizutani, Tomoko; Saraya, Takuya; Shinohara, Hirofumi; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-04-01

    The correlation between the static random access memory (SRAM) power-up state (i.e., state 0 or 1 immediately after the power supply is turned on) and cell transistor variation is systematically studied by circuit simulations and mismatch space partitioning. It is revealed that, while both the mismatches of pFETs (pull-up) and nFETs (pull-down and access) contribute, their relative importance changes depending on the voltage ramping speed. The static retention noise margin well correlates with the power-up state only if the ramping speed is sufficiently low. Otherwise, pull-up transistor mismatch dominates the power-up state determination owing to the interference of capacitive current and asymmetrical capacitive coupling of the storage nodes to the ground and power supply.

  2. Analyzing the Energy and Power Consumption of Remote Memory Accesses in the OpenSHMEM Model

    SciTech Connect

    Jana, Siddhartha; Hernandez, Oscar R; Poole, Stephen W; Hsu, Chung-Hsing; Chapman, Barbara

    2014-01-01

    PGAS models like OpenSHMEM provide interfaces to explicitly initiate one-sided remote memory accesses among processes. In addition, the model also provides synchronizing barriers to ensure a consistent view of the distributed memory at different phases of an application. The incorrect use of such interfaces affects the scalability achievable while using a parallel programming model. This study aims at understanding the effects of these constructs on the energy and power consumption behavior of OpenSHMEM applications. Our experiments show that cost incurred in terms of the total energy and power consumed depends on multiple factors across the software and hardware stack. We conclude that there is a significant impact on the power consumed by the CPU and DRAM due to multiple factors including the design of the data transfer patterns within an application, the design of the communication protocols within a middleware, the architectural constraints laid by the interconnect solutions, and also the levels of memory hierarchy within a compute node. This work motivates treating energy and power consumption as important factors while designing compute solutions for current and future distributed systems.

  3. Accessibility of observable and unobservable characteristics in autobiographical memories of recent and distant past.

    PubMed

    Karylowski, Jerzy J; Mrozinski, Blazej

    2017-02-01

    Self-reports regarding how people visualise themselves during events that occurred in the past show that for events from the distant past individuals report assuming a more external perspective than for events from the recent past [Nigro, G., & Neisser, U. (1983). Point of view in personal memories. Cognitive Psychology, 15, 467-482; Pronin, E., & Ross, L. (2006). Temporal differences in trait self-ascription. Journal of Personality & Social Psychology, 90, 197-209]. Thus it appears that, with the passage of time, representations of self embodied in memories of past events lose their position of an insider and assume a more ordinary position of self as an object seen from the perspective of an outside observer. The purpose of the present experiment was to examine this shift using a performance-based measure of accessibility. Results showed that self-judgements regarding unobservable, covert characteristics were faster for recent-compared to more distant-autobiographical events. However, self-judgements regarding observable, overt characteristics were faster for more distant events. This suggests an accessibility-based mechanism underlying the shift from internal to the relatively more external perspective in forming self-images related to the distant past.

  4. Making working memory work: The effects of extended practice on focus capacity and the processes of updating, forward access, and random access

    PubMed Central

    Price, John M.; Colflesh, Gregory J. H.; Cerella, John; Verhaeghen, Paul

    2014-01-01

    We investigated the effects of 10 hours of practice on variations of the N-Back task to investigate the processes underlying possible expansion of the focus of attention within working memory. Using subtractive logic, we showed that random access (i.e., Sternberg-like search) yielded a modest effect (a 50% increase in speed) whereas the processes of forward access (i.e., retrieval in order, as in a standard N-Back task) and updating (i.e., changing the contents of working memory) were executed about 5 times faster after extended practice. We additionally found that extended practice increased working memory capacity as measured by the size of the focus of attention for the forward-access task, but not for variations where probing was in random order. This suggests that working memory capacity may depend on the type of search process engaged, and that certain working-memory-related cognitive processes are more amenable to practice than others. PMID:24486803

  5. Single-Event Effect Response of a Commercial ReRAM

    NASA Technical Reports Server (NTRS)

    Chen, Dakai; Label, Kenneth A.; Kim, Hak; Phan, Anthony; Wilcox, Edward; Buchner, Stephen; Khachatrian, Ani; Roche, Nicolas

    2014-01-01

    We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.

  6. Response of the Ubiquitin-Proteasome System to Memory Retrieval After Extended-Access Cocaine or Saline Self-Administration.

    PubMed

    Werner, Craig T; Milovanovic, Mike; Christian, Daniel T; Loweth, Jessica A; Wolf, Marina E

    2015-12-01

    The ubiquitin-proteasome system (UPS) has been implicated in the retrieval-induced destabilization of cocaine- and fear-related memories in Pavlovian paradigms. However, nothing is known about its role in memory retrieval after self-administration of cocaine, an operant paradigm, or how the length of withdrawal from cocaine may influence retrieval mechanisms. Here, we examined UPS activity after an extended-access cocaine self-administration regimen that leads to withdrawal-dependent incubation of cue-induced cocaine craving. Controls self-administered saline. In initial experiments, memory retrieval was elicited via a cue-induced seeking/retrieval test on withdrawal day (WD) 50-60, when craving has incubated. We found that retrieval of cocaine- and saline-associated memories produced similar increases in polyubiquitinated proteins in the nucleus accumbens (NAc), compared with rats that did not undergo a seeking/retrieval test. Measures of proteasome catalytic activity confirmed similar activation of the UPS after retrieval of saline and cocaine memories. However, in a subsequent experiment in which testing was conducted on WD1, proteasome activity in the NAc was greater after retrieval of cocaine memory than saline memory. Analysis of other brain regions confirmed that effects of cocaine memory retrieval on proteasome activity, relative to saline memory retrieval, depend on withdrawal time. These results, combined with prior studies, suggest that the relationship between UPS activity and memory retrieval depends on training paradigm, brain region, and time elapsed between training and retrieval. The observation that mechanisms underlying cocaine memory retrieval change depending on the age of the memory has implications for development of memory destabilization therapies for cue-induced relapse in cocaine addicts.

  7. Interface engineered HfO2-based 3D vertical ReRAM

    NASA Astrophysics Data System (ADS)

    Hudec, Boris; Wang, I.-Ting; Lai, Wei-Li; Chang, Che-Chia; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária; Hou, Tuo-Hung

    2016-06-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO2/TiN memory cell. The HfO2 switching layer is grown by atomic layer deposition on the sidewall of a SiO2/TiN/SiO2/TiN/SiO2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 104 s and excellent switching stability at 400 K. Endurance of 107 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance.

  8. Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory.

    PubMed

    Aga, Fekadu Gochole; Woo, Jiyong; Song, Jeonghwan; Park, Jaehyuk; Lim, Seokjae; Sung, Changhyuck; Hwang, Hyunsang

    2017-03-17

    In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable and reproducible quantized conductance states with integer multiples of fundamental conductance obtained by optimizing the voltage ramping rate and the Ti-diffusion barrier (DB) at the Cu/HfO2 interface. Owing to controlled diffusion of Cu ions by the Ti-DB and the optimized ramping rate, through which it was possible to control the time delay of Cu ion reduction, more than seven levels of discrete conductance states were clearly observed. Analytical modeling was performed to determine the rate-limiting step in filament growth based on an electrochemical redox reaction. Our understanding of the fundamental mechanisms of quantized conductance behaviors provide a promising future for the multi-bit CBRAM device.

  9. False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

    NASA Astrophysics Data System (ADS)

    Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

    2013-04-01

    Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

  10. Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

    PubMed Central

    Xu, Zedong; Yu, Lina; Wu, Yong; Dong, Chang; Deng, Ning; Xu, Xiaoguang; Miao, J.; Jiang, Yong

    2015-01-01

    A novel resistive random access memory device is designed with SrTiO3/ La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices. PMID:25982101

  11. Characteristics and mechanism study of cerium oxide based random access memories

    SciTech Connect

    Hsieh, Cheng-Chih; Roy, Anupam; Rai, Amritesh; Chang, Yao-Feng; Banerjee, Sanjay K.

    2015-04-27

    In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeO{sub x} is considered as a relatively new material to other dielectrics. Since research on CeO{sub x} based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeO{sub x} RRAMs and also compare electrical performance of Al/CeO{sub x}/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.

  12. Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

    NASA Astrophysics Data System (ADS)

    Gochole Aga, Fekadu; Woo, Jiyong; Song, Jeonghwan; Park, Jaehyuk; Lim, Seokjae; Sung, Changhyuck; Hwang, Hyunsang

    2017-03-01

    In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable and reproducible quantized conductance states with integer multiples of fundamental conductance obtained by optimizing the voltage ramping rate and the Ti-diffusion barrier (DB) at the Cu/HfO2 interface. Owing to controlled diffusion of Cu ions by the Ti-DB and the optimized ramping rate, through which it was possible to control the time delay of Cu ion reduction, more than seven levels of discrete conductance states were clearly observed. Analytical modeling was performed to determine the rate-limiting step in filament growth based on an electrochemical redox reaction. Our understanding of the fundamental mechanisms of quantized conductance behaviors provide a promising future for the multi-bit CBRAM device.

  13. Electrical Characterization of the RCA CDP1822SD Random Access Memory, Volume 1, Appendix a

    NASA Technical Reports Server (NTRS)

    Klute, A.

    1979-01-01

    Electrical characteristization tests were performed on 35 RCA CDP1822SD, 256-by-4-bit, CMOS, random access memories. The tests included three functional tests, AC and DC parametric tests, a series of schmoo plots, rise/fall time screening, and a data retention test. All tests were performed on an automated IC test system with temperatures controlled by a thermal airstream unit. All the functional tests, the data retention test, and the AC and DC parametric tests were performed at ambient temperatures of 25 C, -20 C, -55 C, 85 C, and 125 C. The schmoo plots were performed at ambient temperatures of 25 C, -55 C, and 125 C. The data retention test was performed at 25 C. Five devices failed one or more functional tests and four of these devices failed to meet the expected limits of a number of AC parametric tests. Some of the schmoo plots indicated a small degree of interaction between parameters.

  14. Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

    NASA Astrophysics Data System (ADS)

    Zhuo, V. Y.-Q.; Jiang, Y.; Li, M. H.; Chua, E. K.; Zhang, Z.; Pan, J. S.; Zhao, R.; Shi, L. P.; Chong, T. C.; Robertson, J.

    2013-02-01

    Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O5 were obtained, where the electrodes consist of materials with low to high work function (Φm ,vac from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study.

  15. Understanding Electrical Conduction States in WO3 Thin Films Applied for Resistive Random-Access Memory

    NASA Astrophysics Data System (ADS)

    Ta, Thi Kieu Hanh; Pham, Kim Ngoc; Dao, Thi Bang Tam; Tran, Dai Lam; Phan, Bach Thang

    2016-05-01

    The electrical conduction and associated resistance switching mechanism of top electrode/WO3/bottom electrode devices [top electrode (TE): Ag, Ti; bottom electrode (BE): Pt, fluorine-doped tin oxide] have been investigated. The direction of switching and switching ability depended on both the top and bottom electrode material. Multiple electrical conduction mechanisms control the leakage current of such switching devices, including trap-controlled space-charge, ballistic, Ohmic, and Fowler-Nordheim tunneling effects. The transition between electrical conduction states is also linked to the switching (SET-RESET) process. This is the first report of ballistic conduction in research into resistive random-access memory. The associated resistive switching mechanisms are also discussed.

  16. Role of an encapsulating layer for reducing resistance drift in phase change random access memory

    NASA Astrophysics Data System (ADS)

    Jin, Bo; Kim, Jungsik; Pi, Dong-Hai; Kim, Hyoung Seop; Meyyappan, M.; Lee, Jeong-Soo

    2014-12-01

    Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM) and the encapsulating layer material (YELM) according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM) while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.

  17. Simulation study on heat conduction of a nanoscale phase-change random access memory cell.

    PubMed

    Kim, Junho; Song, Ki-Bong

    2006-11-01

    We have investigated heat transfer characteristics of a nano-scale phase-change random access memory (PRAM) cell using finite element method (FEM) simulation. Our PRAM cell is based on ternary chalcogenide alloy, Ge2Sb2Te5 (GST), which is used as a recording layer. For contact area of 100 x 100 nm2, simulations of crystallization and amorphization processes were carried out. Physical quantities such as electric conductivity, thermal conductivity, and specific heat were treated as temperature-dependent parameters. Through many simulations, it is concluded that one can reduce set current by decreasing both electric conductivities of amorphous GST and crystalline GST, and in addition to these conditions by decreasing electric conductivity of molten GST one can also reduce reset current significantly.

  18. Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures.

    PubMed

    Loke, Desmond; Shi, Luping; Wang, Weijie; Zhao, Rong; Yang, Hongxin; Ng, Lung-Tat; Lim, Kian-Guan; Chong, Tow-Chong; Yeo, Yee-Chia

    2011-06-24

    Phase-change random access memory cells with superlattice-like (SLL) GeTe/Sb(2)Te(3) were demonstrated to have excellent scaling performance in terms of switching speed and operating voltage. In this study, the correlations between the cell size, switching speed and operating voltage of the SLL cells were identified and investigated. We found that small SLL cells can achieve faster switching speed and lower operating voltage compared to the large SLL cells. Fast amorphization and crystallization of 300 ps and 1 ns were achieved in the 40 nm SLL cells, respectively, both significantly faster than those observed in the Ge(2)Sb(2)Te(5) (GST) cells of the same cell size. 40 nm SLL cells were found to switch with low amorphization voltage of 0.9 V when pulse-widths of 5 ns were employed, which is much lower than the 1.6 V required by the GST cells of the same cell size. These effects can be attributed to the fast heterogeneous crystallization, low thermal conductivity and high resistivity of the SLL structures. Nanoscale PCRAM with SLL structure promises applications in high speed and low power memory devices.

  19. Gate contact resistive random access memory in nano scaled FinFET logic technologies

    NASA Astrophysics Data System (ADS)

    Hsu, Meng-Yin; Shih, Yi-Hong; Chih, Yue-Der; Lin, Chrong Jung; King, Ya-Chin

    2017-04-01

    A full logic-compatible embedded gate contact resistive random access memory (GC-RRAM) cell in the CMOS FinFET logic process without extra mask or processing steps has been successfully demonstrated for high-density and low-cost logic nonvolatile memory (NVM) applications. This novel GC-RRAM cell is composed of a transition metal oxide from the gate contact plug and interlayer dielectric (ILD) in the middle, and a gate contact and an n-type epitaxial drain terminal as the top and bottom electrodes, respectively. It features low-voltage operation and reset current, compact cell size, and a stable read window. As a promising embedded NVM solution, the compact one transistor and one resistor (1T1R) cell is highly scalable as the technology node progresses. Excellent data retention and cycling capability have also been demonstrated by the reliability testing results. These superior characteristics make GC-RRAM one of a few viable candidates for logic NVM for future FinFET circuits.

  20. Memory

    MedlinePlus

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  1. Context controls access to working and reference memory in the pigeon (Columba livia).

    PubMed

    Roberts, William A; Macpherson, Krista; Strang, Caroline

    2016-01-01

    The interaction between working and reference memory systems was examined under conditions in which salient contextual cues were presented during memory retrieval. Ambient colored lights (red or green) bathed the operant chamber during the presentation of comparison stimuli in delayed matching-to-sample training (working memory) and during the presentation of the comparison stimuli as S+ and S- cues in discrimination training (reference memory). Strong competition between memory systems appeared when the same contextual cue appeared during working and reference memory training. When different contextual cues were used, however, working memory was completely protected from reference memory interference.

  2. Frontal activations associated with accessing and evaluating information in working memory: an fMRI study.

    PubMed

    Zhang, John X; Leung, Hoi-Chung; Johnson, Marcia K

    2003-11-01

    To investigate the involvement of frontal cortex in accessing and evaluating information in working memory, we used a variant of a Sternberg paradigm and compared brain activations between positive and negative responses (known to differentially tax access/evaluation processes). Participants remembered two trigrams in each trial and were then cued to discard one of them and maintain the other one as the target set. After a delay, a probe letter was presented and participants made decisions about whether or not it was in the target set. Several frontal areas--anterior cingulate (BA32), middle frontal gyrus (bilateral BA9, right BA10, and right BA46), and left inferior frontal gyrus (BA44/45)--showed increased activity when participants made correct negative responses relative to when they made correct positive responses. No areas activated significantly more for the positive responses than for the negative responses. It is suggested that the multiple frontal areas involved in the test phase of this task may reflect several component processes that underlie more general frontal functions.

  3. Three-Year-Old Children Can Access Their Own Memory to Guide Responses on a Visual Matching Task

    ERIC Educational Resources Information Center

    Balcomb, Frances K.; Gerken, LouAnn

    2008-01-01

    Many models of learning rely on accessing internal knowledge states. Yet, although infants and young children are recognized to be proficient learners, the ability to act on metacognitive information is not thought to develop until early school years. In the experiments reported here, 3.5-year-olds demonstrated memory-monitoring skills by…

  4. Memory.

    ERIC Educational Resources Information Center

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  5. Sexual activity patterns in rams.

    PubMed Central

    Bernon, D E; Shrestha, J N

    1984-01-01

    Behaviour was measured in reproductively experienced rams from three crossbred strains and two pure breeds (Suffolk and Finnish Landrace) in an attempt to develop a method for rapid screening of sexually aggressive rams and to measure breed differences in sexual activity. A set sequential pattern of activity need not occur in sexually experienced rams, and components of their sexual behaviour may be influenced by the estrual status of the ewe. The data indicate that the number of attempted mounts is an acceptable selection tool, with a mount following a short period of investigation most likely to be followed by coitus. Two sequential ten minute periods are sufficient for rapid screening of rams for short-term sexual activity levels. PMID:6713255

  6. Remote Attitude Measurement Sensor (RAMS)

    NASA Technical Reports Server (NTRS)

    Davis, H. W.

    1989-01-01

    Remote attitude measurement sensor (RAMS) offers a low-cost, low-risk, proven design concept that is based on mature, demonstrated space sensor technology. The electronic design concepts and interpolation algorithms were tested and proven in space hardware like th Retroreflector Field Tracker and various star trackers. The RAMS concept is versatile and has broad applicability to both ground testing and spacecraft needs. It is ideal for use as a precision laboratory sensor for structural dynamics testing. It requires very little set-up or preparation time and the output data is immediately usable without integration or extensive analysis efforts. For on-orbit use, RAMS rivals any other type of dynamic structural sensor (accelerometer, lidar, photogrammetric techniques, etc.) for overall performance, reliability, suitability, and cost. Widespread acceptance and extensive usage of RAMS will occur only after some interested agency, such as OAST, adopts the RAMS concept and provides the funding support necessary for further development and implementation of RAMS for a specific program.

  7. A User of RAMS*--Saginaw City Schools.

    ERIC Educational Resources Information Center

    Hall, Randall K.

    In 1969 the Saginaw, Michigan City School System affiliated with the Remotely Accessible Management System (RAMS) developed by the Oakland Schools, a regional service agency. The affiliation enabled Saginaw to move into computerized data processing with minimal costs for programing personnel, systems specialists, hardware, software, and operating…

  8. Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

    SciTech Connect

    Yang, Xiang; Lu, Yang; Lee, Jongho; Chen, I-Wei

    2016-01-04

    Tuning low resistance state is crucial for resistance random access memory (RRAM) that aims to achieve optimal read margin and design flexibility. By back-to-back stacking two nanometallic bipolar RRAMs with different thickness into a complementary structure, we have found that its low resistance can be reliably tuned over several orders of magnitude. Such high tunability originates from the exponential thickness dependence of the high resistance state of nanometallic RRAM, in which electron wave localization in a random network gives rise to the unique scaling behavior. The complementary nanometallic RRAM provides electroforming-free, multi-resistance-state, sub-100 ns switching capability with advantageous characteristics for memory arrays.

  9. Goal-directed access to mental objects in working memory: the role of task-specific feature retrieval.

    PubMed

    Schwager, Sabine; Hagendorf, Herbert

    2009-12-01

    In the present study, we examined the hypothesis of task-specific access to mental objects from verbal working memory. It is currently assumed that a mental object is brought into the focus of attention in working memory by a process of object selection, which provides this object for any upcoming mental operation (Oberauer, 2002). We argue that this view must be extended, since the selection of information for processing is always guided by current intentions and task goals. In our experiments, it was required that two kinds of comparison tasks be executed on digits selected from a set of three digits held in working memory. The tasks differed in regard to the object features the comparison was based on. Access to a new mental object (object switch) took consistently longer on the semantic comparison task than on the recognition task. This difference is not attributable to object selection difficulty and cannot be fully accounted for by task difficulty or differences in rehearsal processes. The results support our assumptions that (1) mental objects are selected for a given specific task and, so, are accessed with their specific task-relevant object features; (2) verbal mental objects outside the focus of attention are usually not maintained at a full feature level but are refreshed phonologically by subvocal rehearsal; and (3) if more than phonological information is required, access to mental objects involves feature retrieval processes in addition to object selection.

  10. Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes

    PubMed Central

    Feng, Wei; Shima, Hisashi; Ohmori, Kenji; Akinaga, Hiroyuki

    2016-01-01

    Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO2/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as the conductive filament mechanism for conventional mode, and an interface-type switching mechanism for low power mode was proposed. The analysis of low frequency noise shows that power spectral density (PSD) is approximately proportional to 1/f for conventional operation mode. Nevertheless, for low power mode, the PSD of low resistance state (LRS) is proportional to 1/f, while that of high resistance state (HRS) is clear proportional to 1/f2. The envelope of multiple Lorentzian spectra of 1/f2 characteristics due to different traps reveals the characteristics of 1/f. For HRS of low power mode, a limited number of traps results in a characteristic of 1/f2. During the set process, the number of oxygen vacancies increases for LRS. Therefore, the PSD value is proportional to 1/f. Owing to the increase in the number of traps when the operation mode changes to conventional mode, the PSD value is proportional to 1/f. To the best of our knowledge, this is the first study that reveals the different noise characteristics in the low power operation mode from that in the conventional operation mode. PMID:28000741

  11. Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Shima, Hisashi; Ohmori, Kenji; Akinaga, Hiroyuki

    2016-12-01

    Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO2/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as the conductive filament mechanism for conventional mode, and an interface-type switching mechanism for low power mode was proposed. The analysis of low frequency noise shows that power spectral density (PSD) is approximately proportional to 1/f for conventional operation mode. Nevertheless, for low power mode, the PSD of low resistance state (LRS) is proportional to 1/f, while that of high resistance state (HRS) is clear proportional to 1/f2. The envelope of multiple Lorentzian spectra of 1/f2 characteristics due to different traps reveals the characteristics of 1/f. For HRS of low power mode, a limited number of traps results in a characteristic of 1/f2. During the set process, the number of oxygen vacancies increases for LRS. Therefore, the PSD value is proportional to 1/f. Owing to the increase in the number of traps when the operation mode changes to conventional mode, the PSD value is proportional to 1/f. To the best of our knowledge, this is the first study that reveals the different noise characteristics in the low power operation mode from that in the conventional operation mode.

  12. Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes.

    PubMed

    Feng, Wei; Shima, Hisashi; Ohmori, Kenji; Akinaga, Hiroyuki

    2016-12-21

    Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO2/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as the conductive filament mechanism for conventional mode, and an interface-type switching mechanism for low power mode was proposed. The analysis of low frequency noise shows that power spectral density (PSD) is approximately proportional to 1/f for conventional operation mode. Nevertheless, for low power mode, the PSD of low resistance state (LRS) is proportional to 1/f, while that of high resistance state (HRS) is clear proportional to 1/f(2). The envelope of multiple Lorentzian spectra of 1/f(2) characteristics due to different traps reveals the characteristics of 1/f. For HRS of low power mode, a limited number of traps results in a characteristic of 1/f(2). During the set process, the number of oxygen vacancies increases for LRS. Therefore, the PSD value is proportional to 1/f. Owing to the increase in the number of traps when the operation mode changes to conventional mode, the PSD value is proportional to 1/f. To the best of our knowledge, this is the first study that reveals the different noise characteristics in the low power operation mode from that in the conventional operation mode.

  13. Anomalous random telegraph noise and temporary phenomena in resistive random access memory

    NASA Astrophysics Data System (ADS)

    Puglisi, Francesco Maria; Larcher, Luca; Padovani, Andrea; Pavan, Paolo

    2016-11-01

    In this paper we present a comprehensive examination of the characteristics of complex Random Telegraph Noise (RTN) signals in Resistive Random Access Memory (RRAM) devices with TiN/Ti/HfO2/TiN structure. Initially, the anomalous RTN (aRTN) is investigated through careful systematic experiment, dedicated characterization procedures, and physics-based simulations to gain insights into the physics of this phenomenon. The experimentally observed RTN parameters (amplitude of the current fluctuations, capture and emission times) are analyzed in different operating conditions. Anomalous behaviors are characterized and their statistical characteristics are evaluated. Physics-based simulations considering both the Coulomb interactions among different defects in the device and the possible existence of defects with metastable states are exploited to suggest a possible physical origin of aRTN. The same simulation framework is also shown to be able to predict other temporary phenomena related to RTN, such as the temporary change in RTN stochastic properties or the sudden and iterative random appearing and vanishing of RTN fluctuations always exhibiting the same statistical characteristics. Results highlight the central role of the electrostatic interactions among individual defects and the trapped charge in describing RTN and related phenomena.

  14. Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation

    SciTech Connect

    Wang, Jer-Chyi Hsu, Chih-Hsien; Ye, Yu-Ren; Ai, Chi-Fong; Tsai, Wen-Fa

    2014-03-15

    Characteristics improvement of gadolinium oxide (Gd{sub x}O{sub y}) resistive random access memories (RRAMs) treated by hydrogen plasma immersion ion implantation (PIII) was investigated. With the hydrogen PIII treatment, the Gd{sub x}O{sub y} RRAMs exhibited low set/reset voltages and a high resistance ratio, which were attributed to the enhanced movement of oxygen ions within the Gd{sub x}O{sub y} films and the increased Schottky barrier height at Pt/Gd{sub x}O{sub y} interface, respectively. The resistive switching mechanism of Gd{sub x}O{sub y} RRAMs was dominated by Schottky emission, as proved by the area dependence of the resistance in the low resistance state. After the hydrogen PIII treatment, a retention time of more than 10{sup 4} s was achieved at an elevated measurement temperature. In addition, a stable cycling endurance with the resistance ratio of more than three orders of magnitude of the Gd{sub x}O{sub y} RRAMs can be obtained.

  15. Single-crystalline CuO nanowires for resistive random access memory applications

    SciTech Connect

    Hong, Yi-Siang; Chen, Jui-Yuan; Huang, Chun-Wei; Chiu, Chung-Hua; Huang, Yu-Ting; Huang, Ting Kai; He, Ruo Shiuan; Wu, Wen-Wei

    2015-04-27

    Recently, the mechanism of resistive random access memory (RRAM) has been partly clarified and determined to be controlled by the forming and erasing of conducting filaments (CF). However, the size of the CF may restrict the application and development as devices are scaled down. In this work, we synthesized CuO nanowires (NW) (∼150 nm in diameter) to fabricate a CuO NW RRAM nanodevice that was much smaller than the filament (∼2 μm) observed in a bulk CuO RRAM device in a previous study. HRTEM indicated that the Cu{sub 2}O phase was generated after operation, which demonstrated that the filament could be minimize to as small as 3.8 nm when the device is scaled down. In addition, energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) show the resistive switching of the dielectric layer resulted from the aggregated oxygen vacancies, which also match with the I-V fitting results. Those results not only verify the switching mechanism of CuO RRAM but also show RRAM has the potential to shrink in size, which will be beneficial to the practical application of RRAM devices.

  16. Robotic Assisted Microsurgery - RAMS FY'97

    NASA Technical Reports Server (NTRS)

    1997-01-01

    JPL and Microdexterity Systems collaborated to develop new surgical capabilities. They developed a Robot Assisted Microsurgery (RAM) tool for surgeons to use for operating on the eye, ear, brain, and blood vessels with unprecedented dexterity. A surgeon can hold the surgical instrument with motions of 6 degrees of freedom with an accuracy of 25 microns in a 70 cu cm workspace. In 1996 a demonstration was performed to remove a microscopic particle from a simulated eyeball. In 1997, tests were performed at UCLA to compare telerobotics with mechanical operations. In 5 out of 7 tests, the RAM tool performed with a significant improvement of preciseness over mechanical operation. New design features include: (1) amplified forced feedback; (2) simultaneous slave robot instrumentation; (3) index control switch on master handle; and (4) tool control switches. Upgrades include: (1) increase in computational power; and (2) installation of hard disk memory storage device for independent operation and independent operation of forceps. In 1997 a final demonstration was performed using 2 telerobotics simultaneously in a microsurgery suture procedure to close a slit in a thin sheet of latex rubber which extended the capabilities of microsurgery procedures. After completing trials and demonstrations for the FDA the potential benefits for thousands of operations will be exposed.

  17. Statistical analysis of the correlations between cell performance and its initial states in contact resistive random access memory cells

    NASA Astrophysics Data System (ADS)

    Kao, Yun Feng; Hsieh, Wei Ting; Che Chen, Chun; King, Ya-Chin; Lin, Chrong Jung

    2017-04-01

    Variability has been one of the critical challenges in the implementation of large resistive random access memory (RRAM) arrays. Wide variations in set/reset, read and cycling characteristics can significantly reduce the design margin and feasibility of a memory array. Predicting the characteristics of RRAM cells is constructive to provide insights and to adjust the memory operations accordingly. In this study, a strong correlation between the cell performance and its initial state is found in contact RRAM (CRRAM) cells by 28 nm CMOS logic technology. Furthermore, a verify-reset operation is proposed to identify the type of conductive filament (CF) in a cell. Distinctive CRRAM characteristics are found to be linked directly to initial CFs, enabling preliminary screening and adaptive resets to address the large variability problems in sizable CRRAM arrays.

  18. Multi-port, optically addressed RAM

    NASA Technical Reports Server (NTRS)

    Johnston, Alan R. (Inventor); Nixon, Robert H. (Inventor); Bergman, Larry A. (Inventor); Esener, Sadik (Inventor)

    1989-01-01

    A random access memory addressing system utilizing optical links between memory and the read/write logic circuits comprises addressing circuits including a plurality of light signal sources, a plurality of optical gates including optical detectors associated with the memory cells, and a holographic optical element adapted to reflect and direct the light signals to the desired memory cell locations. More particularly, it is a multi-port, binary computer memory for interfacing with a plurality of computers. There are a plurality of storage cells for containing bits of binary information, the storage cells being disposed at the intersections of a plurality of row conductors and a plurality of column conductors. There is interfacing logic for receiving information from the computers directing access to ones of the storage cells. There are first light sources associated with the interfacing logic for transmitting a first light beam with the access information modulated thereon. First light detectors are associated with the storage cells for receiving the first light beam, for generating an electrical signal containing the access information, and for conducting the electrical signal to the one of the storage cells to which it is directed. There are holographic optical elements for reflecting the first light beam from the first light sources to the first light detectors.

  19. Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting

    PubMed Central

    Werner, Thilo; Vianello, Elisa; Bichler, Olivier; Garbin, Daniele; Cattaert, Daniel; Yvert, Blaise; De Salvo, Barbara; Perniola, Luca

    2016-01-01

    In this paper, we present an alternative approach to perform spike sorting of complex brain signals based on spiking neural networks (SNN). The proposed architecture is suitable for hardware implementation by using resistive random access memory (RRAM) technology for the implementation of synapses whose low latency (<1μs) enables real-time spike sorting. This offers promising advantages to conventional spike sorting techniques for brain-computer interfaces (BCI) and neural prosthesis applications. Moreover, the ultra-low power consumption of the RRAM synapses of the spiking neural network (nW range) may enable the design of autonomous implantable devices for rehabilitation purposes. We demonstrate an original methodology to use Oxide based RRAM (OxRAM) as easy to program and low energy (<75 pJ) synapses. Synaptic weights are modulated through the application of an online learning strategy inspired by biological Spike Timing Dependent Plasticity. Real spiking data have been recorded both intra- and extracellularly from an in-vitro preparation of the Crayfish sensory-motor system and used for validation of the proposed OxRAM based SNN. This artificial SNN is able to identify, learn, recognize and distinguish between different spike shapes in the input signal with a recognition rate about 90% without any supervision. PMID:27857680

  20. Spiking Neural Networks Based on OxRAM Synapses for Real-Time Unsupervised Spike Sorting.

    PubMed

    Werner, Thilo; Vianello, Elisa; Bichler, Olivier; Garbin, Daniele; Cattaert, Daniel; Yvert, Blaise; De Salvo, Barbara; Perniola, Luca

    2016-01-01

    In this paper, we present an alternative approach to perform spike sorting of complex brain signals based on spiking neural networks (SNN). The proposed architecture is suitable for hardware implementation by using resistive random access memory (RRAM) technology for the implementation of synapses whose low latency (<1μs) enables real-time spike sorting. This offers promising advantages to conventional spike sorting techniques for brain-computer interfaces (BCI) and neural prosthesis applications. Moreover, the ultra-low power consumption of the RRAM synapses of the spiking neural network (nW range) may enable the design of autonomous implantable devices for rehabilitation purposes. We demonstrate an original methodology to use Oxide based RRAM (OxRAM) as easy to program and low energy (<75 pJ) synapses. Synaptic weights are modulated through the application of an online learning strategy inspired by biological Spike Timing Dependent Plasticity. Real spiking data have been recorded both intra- and extracellularly from an in-vitro preparation of the Crayfish sensory-motor system and used for validation of the proposed OxRAM based SNN. This artificial SNN is able to identify, learn, recognize and distinguish between different spike shapes in the input signal with a recognition rate about 90% without any supervision.

  1. Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory.

    PubMed

    Deschenes, Austin; Muneer, Sadid; Akbulut, Mustafa; Gokirmak, Ali; Silva, Helena

    2016-01-01

    Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

  2. Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

    PubMed Central

    Muneer, Sadid; Akbulut, Mustafa; Gokirmak, Ali; Silva, Helena

    2016-01-01

    Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset. PMID:28144517

  3. Evaluating OpenSHMEM Explicit Remote Memory Access Operations and Merged Requests

    SciTech Connect

    Boehm, Swen; Pophale, Swaroop S; Gorentla Venkata, Manjunath

    2016-01-01

    The OpenSHMEM Library Specification has evolved consid- erably since version 1.0. Recently, non-blocking implicit Remote Memory Access (RMA) operations were introduced in OpenSHMEM 1.3. These provide a way to achieve better overlap between communication and computation. However, the implicit non-blocking operations do not pro- vide a separate handle to track and complete the individual RMA opera- tions. They are guaranteed to be completed after either a shmem quiet(), shmem barrier() or a shmem barrier all() is called. These are global com- pletion and synchronization operations. Though this semantic is expected to achieve a higher message rate for the applications, the drawback is that it does not allow fine-grained control over the completion of RMA operations. In this paper, first, we introduce non-blocking RMA operations with requests, where each operation has an explicit request to track and com- plete the operation. Second, we introduce interfaces to merge multiple requests into a single request handle. The merged request tracks multiple user-selected RMA operations, which provides the flexibility of tracking related communication operations with one request handle. Lastly, we explore the implications in terms of performance, productivity, usability and the possibility of defining different patterns of communication via merging of requests. Our experimental results show that a well designed and implemented OpenSHMEM stack can hide the overhead of allocating and managing the requests. The latency of RMA operations with requests is similar to blocking and implicit non-blocking RMA operations. We test our implementation with the Scalable Synthetic Compact Applications (SSCA #1) benchmark and observe that using RMA operations with requests and merging of these requests outperform the implementation using blocking RMA operations and implicit non-blocking operations by 49% and 74% respectively.

  4. Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

    NASA Astrophysics Data System (ADS)

    Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

    2016-08-01

    Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

  5. Analog Nonvolatile Computer Memory Circuits

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd

    2007-01-01

    In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value

  6. System for loading executable code into volatile memory in a downhole tool

    DOEpatents

    Hall, David R.; Bartholomew, David B.; Johnson, Monte L.

    2007-09-25

    A system for loading an executable code into volatile memory in a downhole tool string component comprises a surface control unit comprising executable code. An integrated downhole network comprises data transmission elements in communication with the surface control unit and the volatile memory. The executable code, stored in the surface control unit, is not permanently stored in the downhole tool string component. In a preferred embodiment of the present invention, the downhole tool string component comprises boot memory. In another embodiment, the executable code is an operating system executable code. Preferably, the volatile memory comprises random access memory (RAM). A method for loading executable code to volatile memory in a downhole tool string component comprises sending the code from the surface control unit to a processor in the downhole tool string component over the network. A central processing unit writes the executable code in the volatile memory.

  7. Retrieval practice enhances the accessibility but not the quality of memory.

    PubMed

    Sutterer, David W; Awh, Edward

    2016-06-01

    Numerous studies have demonstrated that retrieval from long-term memory (LTM) can enhance subsequent memory performance, a phenomenon labeled the retrieval practice effect. However, the almost exclusive reliance on categorical stimuli in this literature leaves open a basic question about the nature of this improvement in memory performance. It has not yet been determined whether retrieval practice improves the probability of successful memory retrieval or the quality of the retrieved representation. To answer this question, we conducted three experiments using a mixture modeling approach (Zhang & Luck, 2008) that provides a measure of both the probability of recall and the quality of the recalled memories. Subjects attempted to memorize the color of 400 unique shapes. After every 10 images were presented, subjects either recalled the last 10 colors (the retrieval practice condition) by clicking on a color wheel with each shape as a retrieval cue or they participated in a control condition that involved no further presentations (Experiment 1) or restudy of the 10 shape/color associations (Experiments 2 and 3). Performance in a subsequent delayed recall test revealed a robust retrieval practice effect. Subjects recalled a significantly higher proportion of items that they had previously retrieved relative to items that were untested or that they had restudied. Interestingly, retrieval practice did not elicit any improvement in the precision of the retrieved memories. The same empirical pattern also was observed following delays of greater than 24 hours. Thus, retrieval practice increases the probability of successful memory retrieval but does not improve memory quality.

  8. Contexts and Control Operations Used in Accessing List-Specific, Generalized, and Semantic Memories

    ERIC Educational Resources Information Center

    Humphreys, Michael S.; Murray, Krista L.; Maguire, Angela M.

    2009-01-01

    The human ability to focus memory retrieval operations on a particular list, episode or memory structure has not been fully appreciated or documented. In Experiment 1-3, we make it increasingly difficult for participants to switch between a less recent list (multiple study opportunities), and a more recent list (single study opportunity). Task…

  9. High-Speed GaAs MESFET Memory Study.

    DTIC Science & Technology

    1981-07-01

    ne .. ’ a-d Id,devt h ,, 1 nu-.4511) Semiconductor Memory Enhancement-Mode MESFET Random Access Memory (RAM) GaAs Integrated Circuits (ICs) 4aAs...differential is reached. Figure 2-5 is a differential amplifier with a gain of %20 ( determined bv the gm.R 0 product of the FETs). This circuit has been...Write Mode Figure 2-9 shows the circuit that was Simulated to determine the transient write-mode reset response. The capacitors CB and CBB (0.2 pF each

  10. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    DOEpatents

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  11. Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories.

    PubMed

    Phillips, G W; August, R A; Campbell, A B; Nelson, M E; Price, J L; Guardala, N A; Moscovitch, M

    2002-01-01

    The feasibility was investigated of a solid-state neutron detector/dosemeter based on single-event upset (SEU) effects in dynamic random-access memories (DRAMs), commonly used in computer memories. Such a device, which uses a neutron converter material to produce a charged particle capable of causing an upset, would be light-weight, low-power, and could be read simply by polling the memory for bit flips. It would have significant advantages over standard solid-state neutron dosemeters which require off-line processing for track etching and analysis. Previous efforts at developing an SEU neutron detector/dosemeter have suffered from poor response, which can be greatly enhanced by selecting a modern high-density DRAM chip for SEU sensitivity and by using a thin 10B film as a converter. Past attempts to use 10B were not successful because the average alpha particle energy was insufficient to penetrate to the sensitive region of the memory. This can be overcome by removing the surface passivation layer before depositing the 10B film or by implanting 10B directly into the chip. Previous experimental data show a 10(3) increase in neutron sensitivity by chips containing borosilicate glass, which could be used in an SEU detector. The results are presented of simulations showing that the absolute efficiency of an SEU neutron dosemeter can be increased by at least a factor of 1000 over earlier designs.

  12. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

    SciTech Connect

    Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok; Hyun Park, Ju; Su Jeon, Dong; Geun Kim, Tae

    2014-03-07

    The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

  13. Set statistics in conductive bridge random access memory device with Cu/HfO{sub 2}/Pt structure

    SciTech Connect

    Zhang, Meiyun; Long, Shibing Wang, Guoming; Xu, Xiaoxin; Li, Yang; Liu, Qi; Lv, Hangbing; Liu, Ming; Lian, Xiaojuan; Miranda, Enrique; Suñé, Jordi

    2014-11-10

    The switching parameter variation of resistive switching memory is one of the most important challenges in its application. In this letter, we have studied the set statistics of conductive bridge random access memory with a Cu/HfO{sub 2}/Pt structure. The experimental distributions of the set parameters in several off resistance ranges are shown to nicely fit a Weibull model. The Weibull slopes of the set voltage and current increase and decrease logarithmically with off resistance, respectively. This experimental behavior is perfectly captured by a Monte Carlo simulator based on the cell-based set voltage statistics model and the Quantum Point Contact electron transport model. Our work provides indications for the improvement of the switching uniformity.

  14. Fan/Ram Duct Program

    DTIC Science & Technology

    1973-10-01

    turbofan engine shutoff scheme, the ram duct flow conditions, and the Ian duct shutoff vane area transi- tion schedule. This loss will be...airflow. The performance of the turbofan is neglected until the main engine burner is ignited. At that time it is assumed that the turbo - fan...B. Transient Operation . . .. TRANSIENT TRANSITION TEST CASES A. Turbofan to Ramjet B. Ramjet to Turbo fan CONCLUSIONS AND RECOMMENDATIONS

  15. Pipe ram improvement facilitates hang off

    SciTech Connect

    Not Available

    1986-06-02

    Hard facing on the top surface of ram blowout preventors (BOPs) can prevent deformation when hanging off drill pipe. A new ram body features this hardfacing. This improvement is important to floating drilling because it transfers potential damage from critical pressure components to relatively inexpensive and less critical drill pipe upsets. National Association of Corrosion Engineers (NACE) specifications for H/sub 2/S resistance often mean that pipe rams do not have the hardness required to hang off long strings without deformation to the ram. Conventionally, the problem has been solved by welding a harder material to the portion of the ram on which the tool joint lands. This method, although widely used, can result in cracking in the inlaid area of the ram. In a typical sequence, weather requires a floating drilling rig to disconnect. The pipe rams are closed after the bit is pulled off bottom. The string is lowered until a tool joint is in the rams. The drillstring is backed off, leaving downhole string weight on the rams. Upper rams are shut, and upper marine riser package, riser, and drillstring are disconnected, freeing the vessel from the well. On reentry, the operator can find that the ram bodies are damaged or the inlay is broken. This can necessitate pulling the riser for BOP stack maintenance.

  16. Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

    NASA Astrophysics Data System (ADS)

    Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M.

    2016-10-01

    In this study, an adjustable built-in resistor was observed on an indium-tin oxide (ITO)-capped resistance random access memory (RRAM) device, which has the potential to reduce operating power. Quite notably, the high-resistance state (HRS) current of the device decreased with decreasing current compliance, and a special situation, that is, a gradual change in current always appears and climbs slowly to reach the compliance current in the set process even when the compliance current decreases, was observed. Owing to this observed phenomenon, the device is regarded to be equipped with an adjustable built-in resistor, which has the potential for low-power device application.

  17. Towards scalable parellelism in Monte Carlo particle transport codes using remote memory access

    SciTech Connect

    Romano, Paul K; Brown, Forrest B; Forget, Benoit

    2010-01-01

    One forthcoming challenge in the area of high-performance computing is having the ability to run large-scale problems while coping with less memory per compute node. In this work, they investigate a novel data decomposition method that would allow Monte Carlo transport calculations to be performed on systems with limited memory per compute node. In this method, each compute node remotely retrieves a small set of geometry and cross-section data as needed and remotely accumulates local tallies when crossing the boundary of the local spatial domain. initial results demonstrate that while the method does allow large problems to be run in a memory-limited environment, achieving scalability may be difficult due to inefficiencies in the current implementation of RMA operations.

  18. Research and Applications Modules (RAM), phase B study

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The research and applications modules (RAM) system is discussed. The RAM is a family of payload carrier modules that can be delivered to and retrieved from earth orbit by the space shuttle. The RAM's capability for implementing a wide range of manned and man-tended missions is described. The rams have evolved into three types; (1) pressurized RAMs, (2) unpressurized RAMs, and (3) pressurizable free-flying RAMs. A reference experiment plan for use as a baseline in the derivation and planning of the RAM project is reported. The plan describes the number and frequency of shuttle flights dedicated to RAM missions and the RAM payloads for the identified flights.

  19. The Aviation Careers Accessibility Program (ACAP) at Florida Memorial College. Final Report.

    ERIC Educational Resources Information Center

    Florida Memorial Coll., Miami.

    This project, referred to as the Aviation Careers Accessibility Program (ACAP) established a model program for inner-city minority high school students that would allow them information and accessibility to careers and opportunities in the aviation industry. The project featured two program components: an academic year component during and a 5- or…

  20. Realization of a reversible switching in TaO{sub 2} polymorphs via Peierls distortion for resistance random access memory

    SciTech Connect

    Zhu, Linggang; Sun, Zhimei; Zhou, Jian; Guo, Zhonglu

    2015-03-02

    Transition-metal-oxide based resistance random access memory (RRAM) is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate materials used in the memories becomes an urgent task. Here, a structure with the TaO{sub 2} formula was predicted using evolutionary algorithms in combination with first-principles calculations. This triclinic structure (T-TaO{sub 2}) is both energetically and dynamically more favorable than the commonly believed rutile structure (R-TaO{sub 2}). The metal-insulator transition (MIT) between metallic R-TaO{sub 2} and T-TaO{sub 2} (band gap: 1.0 eV) is via a Peierls distortion, which makes TaO{sub 2} a potential candidate for RRAM. The energy barrier for the reversible phase transition is 0.19 eV/atom and 0.23 eV/atom, respectively, suggesting low power consumption for the resistance switch. The present findings about the MIT as the resistance-switch mechanism in Ta-O system will stimulate experimental work to fabricate tantalum oxides based RRAM.

  1. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    NASA Astrophysics Data System (ADS)

    Thomas, Luc; Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang

    2014-05-01

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  2. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    NASA Astrophysics Data System (ADS)

    Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dongkyu; Zhang, Xi-Xiang; Pey, Kin-Leong

    2011-08-01

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectric resistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

  3. The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories.

    PubMed

    Souchier, E; D'Acapito, F; Noé, P; Blaise, P; Bernard, M; Jousseaume, V

    2015-10-07

    Conductive bridging random access memories (CBRAMs) are one of the most promising emerging technologies for the next generation of non-volatile memory. However, the lack of understanding of the switching mechanism at the nanoscale level prevents successful transfer to industry. In this paper, Ag/GeSx/W CBRAM devices are analyzed using depth selective X-ray Absorption Spectroscopy before and after switching. The study of the local environment around Ag atoms in such devices reveals that Ag is in two very distinct environments with short Ag-S bonds due to Ag dissolved in the GeSx matrix, and longer Ag-Ag bonds related to an Ag metallic phase. These experiments allow the conclusion that the switching process involves the formation of metallic Ag nano-filaments initiated at the Ag electrode. All these experimental features are well supported by ab initio molecular dynamics simulations showing that Ag favorably bonds to S atoms, and permit the proposal of a model at the microscopic level that can explain the instability of the conductive state in these Ag-GeSx CBRAM devices. Finally, the principle of the nondestructive method described here can be extended to other types of resistive memory concepts.

  4. [Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

    NASA Astrophysics Data System (ADS)

    Liu, E.; Swerts, J.; Couet, S.; Mertens, S.; Tomczak, Y.; Lin, T.; Spampinato, V.; Franquet, A.; Van Elshocht, S.; Kar, G.; Furnemont, A.; De Boeck, J.

    2016-03-01

    Alternative free layer materials with high perpendicular anisotropy are researched to provide spin-transfer-torque magnetic random access memory stacks' sufficient thermal stability at critical dimensions of 20 nm and below. We demonstrate a high tunnel magetoresistance (TMR) MgO-based magnetic tunnel junction stack with a hybrid free layer design made of a [Co/Ni] multilayer and CoFeB. The seed material on which the [Co/Ni] multilayer is deposited determines its switching characteristics. When deposited on a Pt seed layer, soft magnetic switching behavior with high squareness is obtained. When deposited on a NiCr seed, the perpendicular anisotropy remains high, but the squareness is low and coercivity exceeds 1000 Oe. Interdiffusion of the seed material with the [Co/Ni] multilayers is found to be responsible for the different switching characteristics. In optimized stacks, a TMR of 165% and low resistance-area (RA) product of 7.0 Ω μm2 are attained for free layers with an effective perpendicular magnetic anisotropy energy of 1.25 erg/cm2, which suggests that the hybrid free layer materials may be a viable candidate for high density magnetic random access memory applications.

  5. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

    SciTech Connect

    Sun, Jun; Wu, Xing; Xu, Feng; Xu, Tao; Sun, Litao; Liu, Qi; Xie, Hongwei; Long, Shibing; Lv, Hangbing; Li, Yingtao; Liu, Ming

    2013-02-04

    In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO{sub 2}/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO{sub 2}/Pt and Cu/ZrO{sub 2}/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO{sub 2} layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10-30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO{sub 2}/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.

  6. Respecting Relations: Memory Access and Antecedent Retrieval in Incremental Sentence Processing

    ERIC Educational Resources Information Center

    Kush, Dave W.

    2013-01-01

    This dissertation uses the processing of anaphoric relations to probe how linguistic information is encoded in and retrieved from memory during real-time sentence comprehension. More specifically, the dissertation attempts to resolve a tension between the demands of a linguistic processor implemented in a general-purpose cognitive architecture and…

  7. Hyperlink Format, Categorization Abilities and Memory Span as Contributors to Deaf Users Hypertext Access

    ERIC Educational Resources Information Center

    Farjardo, Inmaculada; Arfe, Barbara; Benedetti, Patrizia; Altoe, Gianmarco

    2008-01-01

    Sixty deaf and hearing students were asked to search for goods in a Hypertext Supermarket with either graphical or textual links of high typicality, frequency, and familiarity. Additionally, they performed a picture and word categorization task and two working memory span tasks (spatial and verbal). Results showed that deaf students were faster in…

  8. Evaluation of Magnetoresistive RAM for Space Applications

    NASA Technical Reports Server (NTRS)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  9. HyRAM Testing Script.

    SciTech Connect

    Parkins, Owen

    2014-12-01

    The testing script is to provide a method of inspections to HyRAM (v1.0.0.244 Alpha) application features. This document will lead participants through the use of the application to make sure the application performs as designed. If a feature of the application becomes non-working, this script will relay useful information back to the designers of the application so that the feature can be fixed. This is essential to keep the application updated and performing as designed so that the users of this program can be satisfied. There will be frequent updates of this document to ensure proper testing of future application versions.

  10. Memories.

    ERIC Educational Resources Information Center

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  11. Blackcomb: Hardware-Software Co-design for Non-Volatile Memory in Exascale Systems

    SciTech Connect

    Schreiber, Robert

    2014-11-26

    array [Niu 2012b]. We have conducted an in depth analysis of the circuit and system level design implications of multi-layer cross-point Resistive RAM (MLCReRAM) from performance, power and reliability perspectives [Xu 2013]. The objective of this study is to understand the design trade-offs of this technology with respect to the MLC Phase Change Memory (MLCPCM).Our MLC ReRAM design at the circuit and system levels indicates that different resistance allocation schemes, programming strategies, peripheral designs, and material selections profoundly affect the area, latency, power, and reliability of MLC ReRAM. Based on this analysis, we conduct two case studies: first we compare MLC ReRAM design against MLC phase-change memory (PCM) and multi-layer cross-point ReRAM design, and point out why multi-level ReRAM is appealing; second we further explore the design space for MLC ReRAM. Architecture and Application We explored hybrid checkpointing using phase-change memory for future exascale systems [Dong 2011] and showed that the use of nonvolatile memory for local checkpointing significantly increases the number of faults covered by local checkpoints and reduces the probability of a global failure in the middle of a global checkpoint to less than 1%. We also proposed a technique called i2WAP to mitigate the write variations in NVM-based last-level cache for the improvement of the NVM lifetime [Wang 2013]. Our wear leveling technique attempts to work around the limitations of write endurance by arranging data access so that write operations can be distributed evenly across all the storage cells. During our intensive research on fault-tolerant NVM design, we found that ECC cannot effectively tolerate hard errors from limited write endurance and process imperfection. Therefore, we devised a novel Point and Discard (PAD) architecture in in [ 2012] as a hard-error-tolerant architecture for ReRAM-based Last Level Caches. PAD improves the lifetime of ReRAM caches by 1.6X-440X under

  12. Accessibility

    EPA Pesticide Factsheets

    Federal laws, including Section 508 of the Rehabilitation Act, mandate that people with disabilities have access to the same information that someone without a disability would have. 508 standards cover electronic and information technology (EIT) products.

  13. COS Side 2 Dump Test and Verification of COS Memory Loads

    NASA Astrophysics Data System (ADS)

    Bacinski, John

    2013-10-01

    This proposal is a test and verification of the COS dump of memory capability.Areas of Control Section {CS} to dump include: EXEC RAM, EEPROM, and CS PROM {with the CS in Operate}. Areas of DIB memory to dump include: DIB RAM and DIB PROM {with the DIB in Operate}. Areas of DCE memory to dump include: the DCE code image. Note that the DIB and DCE memory must first be copied to CS buffer RAM as images, which are then dumped.

  14. An energy-efficient SIMD DSP with multiple VLIW configurations and an advanced memory access unit for LTE-A modem LSIs

    NASA Astrophysics Data System (ADS)

    Tomono, Mitsuru; Ito, Makiko; Nomura, Yoshitaka; Mouri, Makoto; Hirose, Yoshio

    2015-12-01

    Energy efficiency is the most important factor in the design of wireless modem LSIs for mobile handset systems. We have developed an energy-efficient SIMD DSP for LTE-A modem LSIs. Our DSP has mainly two hardware features in order to reduce energy consumption. The first one is multiple VLIW configurations to minimize accesses to instruction memories. The second one is an advanced memory access unit to realize complex memory accesses required for wireless baseband processing. With these features, performance of our DSP is about 1.7 times faster than a base DSP on average for standard LTE-A Libraries. Our DSP achieves about 20% improvement in energy efficiency compared to a base DSP for LTE-A modem LSIs.

  15. Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

    PubMed Central

    Lai, Yunfeng; Qiu, Wenbiao; Zeng, Zecun; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2016-01-01

    ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW–based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW–based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell.

  16. On EMDR: eye movements during retrieval reduce subjective vividness and objective memory accessibility during future recall.

    PubMed

    van den Hout, Marcel A; Bartelski, Nicola; Engelhard, Iris M

    2013-01-01

    In eye movement desensitization and reprocessing (EMDR), a treatment for post-traumatic stress disorder (PTSD), patients make eye movements (EM) during trauma recall. Earlier experimental studies found that EM during recall reduces memory vividness during future recalls, and this was taken as laboratory support for the underlying mechanism of EMDR. However, reduced vividness was assessed with self-reports that may be affected by demand characteristics. We tested whether recall+EM also reduces memory vividness on a behavioural reaction time (RT) task. Undergraduates (N=32) encoded two pictures, recalled them, and rated their vividness. In the EM group, one of the pictures was recalled again while making EM. In the no-EM group one of the pictures was recalled without EM. Then fragments from both the recalled and non-recalled pictures, and new fragments were presented and participants rated whether these were (or were not) seen before. Both pictures were rated again for vividness. In the EM group, self-rated vividness of the recalled+EM picture decreased, relative to the non-recalled picture. In the no-EM group there was no difference between the recalled versus non-recalled picture. The RT task showed the same pattern. Reduction of memory vividness due to recall+EM is also evident from non-self-report data.

  17. Self-checking on-line testable static RAM

    NASA Technical Reports Server (NTRS)

    Chau, Savio N. (Inventor); Rennels, David A. (Inventor)

    1993-01-01

    This is a fault-tolerant random access memory for use in fault-tolerant computers. It comprises a plurality of memory chips each comprising a plurality of on-line testable and correctable memory cells disposed in rows and columns for holding individually addressable binary bits and provision for error detection incorporated into each memory cell for outputting an error signal whenever a transient error occurs therein. In one embodiment, each of the memory cells comprises a pair of static memory sub-cells for simultaneously receiving and holding a common binary data bit written to the memory cell and the error detection provision comprises comparator logic for continuously sensing and comparing the contents of the memory sub-cells to one another and for outputting the error signal whenever the contents do not match. In another embodiment, each of the memory cells comprises a static memory sub-cell and a dynamic memory sub-cell for simultaneously receiving and holding a common binary data bit written to the memory cell and the error detection provision comprises comparator logic for continuously sensing and comparing the contents of the static memory sub-cell to the dynamic memory sub-cell and for outputting the error signal whenever the contents do not match. Capability for correction of errors is also included.

  18. The effect of oxygen vacancies on the electrical properties of TiO2-x Re-RAM switching devices

    NASA Astrophysics Data System (ADS)

    Benkraouda, Maamar

    2014-03-01

    The main goal of this work is to contribute toward an accurate determination of the electronic properties of Resistance random access memory (Re-RAM) using the density functional theory, which is the current state of the art method that employs high accuracy, it can treat a few hundred atoms on medium sized PC. All the fundamental properties are studied as a function of the mole fraction. The density of states arising from vacancy distribution, the electron transport and formation energy are analyzed. Using controllable mole fraction, various intermediate resistance states are induced. Oxygen vacancy has a considerable effect on the electrical properties of most transition metal oxides such as TiOx Re-RAM devices. The presence of oxygen vacancies is linked to the on-state conduction and resistance switching mechanism. Hydrogen is a ubiquitous impurity in most semiconductors, insertion of hydrogen atoms will remove some of defect states which were induced by oxygen vacancies; this will obviously have an effect on the conductive path, because hydrogen in the vacancy site results in the rupture of conductive channel by localizing electrons, the conductivity may decrease in this case.

  19. An Account of Performance in Accessing Information Stored in Long-Term Memory. A Fixed-Links Model Approach

    ERIC Educational Resources Information Center

    Altmeyer, Michael; Schweizer, Karl; Reiss, Siegbert; Ren, Xuezhu; Schreiner, Michael

    2013-01-01

    Performance in working memory and short-term memory tasks was employed for predicting performance in a long-term memory task in order to find out about the underlying processes. The types of memory were represented by versions of the Posner Task, the Backward Counting Task and the Sternberg Task serving as measures of long-term memory, working…

  20. Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices.

    PubMed

    Kim, Wonjoo; Menzel, Stephan; Wouters, Dirk J; Guo, Yuzheng; Robertson, John; Roesgen, Bernd; Waser, Rainer; Rana, Vikas

    2016-10-20

    Interface reactions constitute essential aspects of the switching mechanism in redox-based resistive random access memory (ReRAM). For example, the modulation of the electronic barrier height at the Schottky interface is considered to be responsible for the toggling of the resistance states. On the other hand, the role of the ohmic interface in the resistive switching behavior is still ambigious. In this paper, the impact of different ohmic metal-electrode (M) materials, namely W, Ta, Ti, and Hf on the characteristics of Ta2O5 ReRAM is investigated. These materials are chosen with respect to their free energy for metal oxide formation and, associated, their impact on the formation energy of oxygen vacancy defects at the M/Ta2O5 interface. The resistive switching devices with Ti and Hf electrodes that have a negative defect formation energy, show an early RESET failure during the switching cycles. This failure process with Ti and Hf electrode is attributed to the accumulation of oxygen vacancies in the Ta2O5 layer, which leads to permanent breakdown of the metal-oxide to a low resistive state. In contrast, the defect formation energy in the Ta2O5 with respect to Ta and W electrodes is positive and for those highly stable resistive switching behavior is observed. During the quasi-static and transient-pulse characterization, the ReRAM devices with the W electrode consistently show an increased high resistance state (HRS) than with the Ta electrode for all RESET stop voltages. This effect is attributed to the faster oxygen exchange reaction at the W-electrode interface during the RESET process in accordance to lower stability of WO3 than Ta2O5. Based on these findings, an advanced resistive switching model, wherein also the oxygen exchange reaction at the ohmic M-electrode interface plays a vital role in determining of the resistance states, is presented.

  1. A Symptom-Focused Hypnotic Approach to Accessing and Processing Previously Repressed/Dissociated Memories.

    ERIC Educational Resources Information Center

    Ratican, Kathleen L.

    1996-01-01

    The kinesthetic track back technique accesses the origins of current symptoms and may uncover previously repressed/dissociated material, if such material exists in the client's unconscious mind, is relevant to the symptoms, and is ready to be processed consciously. Case examples are given to illustrate proper use of this technique. (LSR)

  2. Improving Memory after Interruption: Exploiting Soft Constraints and Manipulating Information Access Cost

    ERIC Educational Resources Information Center

    Morgan, Phillip L.; Patrick, John; Waldron, Samuel M.; King, Sophia L.; Patrick, Tanya

    2009-01-01

    Forgetting what one was doing prior to interruption is an everyday problem. The recent soft constraints hypothesis (Gray, Sims, Fu, & Schoelles, 2006) emphasizes the strategic adaptation of information processing strategy to the task environment. It predicts that increasing information access cost (IAC: the time, and physical and mental effort…

  3. Virtual fabrication using directed self-assembly for process optimization in a 14-nm dynamic random access memory

    NASA Astrophysics Data System (ADS)

    Kamon, Mattan; Akbulut, Mustafa; Yan, Yiguang; Faken, Daniel; Pap, Andras; Allampalli, Vasanth; Greiner, Ken; Fried, David

    2016-07-01

    For directed self-assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of self-aligned quadruple patterning with Liu-Nealey chemoepitaxy on a 14-nm dynamic random access memory (DRAM) process. To quantify the impact of this module replacement, we investigated a key process yield metric for DRAM, interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell's hexagonally packed capacitors patterned with an array of diblock copolymer cylinders in place of fourfold litho-etch (LE4) patterning.

  4. Source-Bias Dependent Charge Accumulation in P+-Poly Gate SOI Dynamic Random Access Memory Cell Transistors

    NASA Astrophysics Data System (ADS)

    Sim, Jai-hoon; Kim, Kinam

    1998-03-01

    In this paper, we report the dynamic data retention problems caused by the transient leakage current in a cell transistor during the bit-line pull down operation in p+-poly gate fully depleted silicon-on-insulator (FD-SOI) dynamic random access memories (DRAMs) due to the source-induced charge accumulation (SICA) effect in the silicon thin film. Due to the inherent floating body effect in the FD-SOI transistor, charge accumulation in the silicon thin film becomes inevitable when the gate-to-source voltage (VGS) is smaller than the flat-band voltage (VFB). In order to eliminate the transient leakage current problem in p+-poly gate FD-SOI cell transistor, the ground-precharged bit-line (GPB) sensing method is introduced.

  5. Glprof: A Gprof inspired, Callgraph-oriented Per-Object Disseminating Memory Access Multi-Cache Profiler

    SciTech Connect

    Janjusic, Tommy; Kartsaklis, Christos

    2015-01-01

    Application analysis is facilitated through a number of program profiling tools. The tools vary in their complexity, ease of deployment, design, and profiling detail. Specifically, understand- ing, analyzing, and optimizing is of particular importance for scientific applications where minor changes in code paths and data-structure layout can have profound effects. Understanding how intricate data-structures are accessed and how a given memory system responds is a complex task. In this paper we describe a trace profiling tool, Glprof, specifically aimed to lessen the burden of the programmer to pin-point heavily involved data-structures during an application's run-time, and understand data-structure run-time usage. Moreover, we showcase the tool's modularity using additional cache simulation components. We elaborate on the tool's design, and features. Finally we demonstrate the application of our tool in the context of Spec bench- marks using the Glprof profiler and two concurrently running cache simulators, PPC440 and AMD Interlagos.

  6. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    NASA Astrophysics Data System (ADS)

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-01

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105 s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  7. Fencing network direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2015-07-14

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to a deterministic data communications network through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and the deterministic data communications network; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  8. Fencing network direct memory access data transfers in a parallel active messaging interface of a parallel computer

    DOEpatents

    Blocksome, Michael A.; Mamidala, Amith R.

    2015-07-07

    Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to a deterministic data communications network through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and the deterministic data communications network; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

  9. Observation of AlO x material in electrical resistive switching for nonvolatile random access memory application

    NASA Astrophysics Data System (ADS)

    Jung, Kyun-Ho; Song, Seung-Gon; Park, Kyoung-Wan; Sok, Jung-Hyun; Kim, Kyong-Min; Park, Yun-Sun

    2017-03-01

    We fabricated an Al / AlO x / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 107 when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlO x material has various possibilities for use in nonvolatile random access memory applications.

  10. Comparison and statistical analysis of four write stability metrics in bulk CMOS static random access memory cells

    NASA Astrophysics Data System (ADS)

    Qiu, Hao; Mizutani, Tomoko; Saraya, Takuya; Hiramoto, Toshiro

    2015-04-01

    The commonly used four metrics for write stability were measured and compared based on the same set of 2048 (2k) six-transistor (6T) static random access memory (SRAM) cells by the 65 nm bulk technology. The preferred one should be effective for yield estimation and help predict edge of stability. Results have demonstrated that all metrics share the same worst SRAM cell. On the other hand, compared to butterfly curve with non-normality and write N-curve where no cell state flip happens, bit-line and word-line margins have good normality as well as almost perfect correlation. As a result, both bit line method and word line method prove themselves preferred write stability metrics.

  11. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    NASA Astrophysics Data System (ADS)

    Tomczak, Y.; Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Liu, E.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2016-01-01

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm2 after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  12. Impact of adolescent sucrose access on cognitive control, recognition memory, and parvalbumin immunoreactivity.

    PubMed

    Reichelt, Amy C; Killcross, Simon; Hambly, Luke D; Morris, Margaret J; Westbrook, R Fred

    2015-04-01

    In this study we sought to determine the effect of daily sucrose consumption in young rats on their subsequent performance in tasks that involve the prefrontal cortex and hippocampus. High levels of sugar consumption have been associated with the development of obesity, however less is known about how sugar consumption influences behavioral control and high-order cognitive processes. Of particular concern is the fact that sugar intake is greatest in adolescence, an important neurodevelopmental period. We provided sucrose to rats when they were progressing through puberty and adolescence. Cognitive performance was assessed in adulthood on a task related to executive function, a rodent analog of the Stroop task. We found that sucrose-exposed rats failed to show context-appropriate responding during incongruent stimulus compounds presented at test, indicative of impairments in prefrontal cortex function. Sucrose exposed rats also showed deficits in an on object-in-place recognition memory task, indicating that both prefrontal and hippocampal function was impaired. Analysis of brains showed a reduction in expression of parvalbumin-immunoreactive GABAergic interneurons in the hippocampus and prefrontal cortex, indicating that sucrose consumption during adolescence induced long-term pathology, potentially underpinning the cognitive deficits observed. These results suggest that consumption of high levels of sugar-sweetened beverages by adolescents may also impair neurocognitive functions affecting decision-making and memory, potentially rendering them at risk for developing mental health disorders.

  13. Temperature induced complementary switching in titanium oxide resistive random access memory

    NASA Astrophysics Data System (ADS)

    Panda, D.; Simanjuntak, F. M.; Tseng, T.-Y.

    2016-07-01

    On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

  14. The structure-sensitivity of memory access: evidence from Mandarin Chinese

    PubMed Central

    Dillon, Brian; Chow, Wing-Yee; Wagers, Matthew; Guo, Taomei; Liu, Fengqin; Phillips, Colin

    2014-01-01

    The present study examined the processing of the Mandarin Chinese long-distance reflexive ziji to evaluate the role that syntactic structure plays in the memory retrieval operations that support sentence comprehension. Using the multiple-response speed-accuracy tradeoff (MR-SAT) paradigm, we measured the speed with which comprehenders retrieve an antecedent for ziji. Our experimental materials contrasted sentences where ziji's antecedent was in the local clause with sentences where ziji's antecedent was in a distant clause. Time course results from MR-SAT suggest that ziji dependencies with syntactically distant antecedents are slower to process than syntactically local dependencies. To aid in interpreting the SAT data, we present a formal model of the antecedent retrieval process, and derive quantitative predictions about the time course of antecedent retrieval. The modeling results support the Local Search hypothesis: during syntactic retrieval, comprehenders initially limit memory search to the local syntactic domain. We argue that Local Search hypothesis has important implications for theories of locality effects in sentence comprehension. In particular, our results suggest that not all locality effects may be reduced to the effects of temporal decay and retrieval interference. PMID:25309486

  15. The automatic visual simulation of words: A memory reactivated mask slows down conceptual access.

    PubMed

    Rey, Amandine E; Riou, Benoit; Vallet, Guillaume T; Versace, Rémy

    2017-03-01

    How do we represent the meaning of words? The present study assesses whether access to conceptual knowledge requires the reenactment of the sensory components of a concept. The reenactment-that is, simulation-was tested in a word categorisation task using an innovative masking paradigm. We hypothesised that a meaningless reactivated visual mask should interfere with the simulation of the visual dimension of concrete words. This assumption was tested in a paradigm in which participants were not aware of the link between the visual mask and the words to be processed. In the first phase, participants created a tone-visual mask or tone-control stimulus association. In the test phase, they categorised words that were presented with 1 of the tones. Results showed that words were processed more slowly when they were presented with the reactivated mask. This interference effect was only correlated with and explained by the value of the visual perceptual strength of the words (i.e., our experience with the visual dimensions associated with concepts) and not with other characteristics. We interpret these findings in terms of word access, which may involve the simulation of sensory features associated with the concept, even if participants were not explicitly required to access visual properties. (PsycINFO Database Record

  16. The role of the inserted layer in resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Zhang, Dainan; Ma, Guokun; Zhang, Huaiwu; Tang, Xiaoli; Zhong, Zhiyong; Jie, Li; Su, Hua

    2016-07-01

    NiO resistive switching devices were fabricated by reactive DC magnetron sputtering at room temperature containing different inserted layers. From measurements, we demonstrated the filaments were made up by metal Co rather than the oxygen defect or other metal. A current jumping phenomenon in the SET process was observed, evidencing that the filament generating procedure was changed due to the inserted layers. In this process, we demonstrate the current jumping appeared in higher voltage region when the position of inserted layer was close to the bottom electrode. The I-V curves shifted to the positive direction as the thickness of inserted layer increasing. With the change of the number of inserted layers, SET voltages varied while the RESET voltage kept stable. According to the electrochemical metallization memory mechanism, detailed explanations on all the phenomena were addressed. This discovery is supposed of great potentials in the use of designing multi-layer RRAM devices.

  17. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory

    NASA Astrophysics Data System (ADS)

    Dill, Joshua Luchay

    This thesis details two experimental methods for quantifying magnetic tunnel junction behavior, namely write error rates and field modulated spin-torque ferromagnetic resonance. The former examines how reliably an applied spin-transfer torque can excite magnetization dynamics that lead to a reversal of magnetization direction while the latter studies steady state dynamics provided by an oscillating spin-transfer torque. These characterization techniques reveal write error rate behavior for a particular composition magnetic tunnel junction that qualitatively deviates from theoretical predictions. Possible origins of this phenomenon are also investigated with the field modulated spin-torque ferromagnetic resonance technique. By understanding the dynamics of magnetic moments predicted by theory, one can experimentally confirm or disprove these theories in order to accurately model and predict tunnel junction behavior. By having a better model for what factors are important in magnetization dynamics, one can optimize these factors in terms of improving magnetic tunnel junctions for their use as computer memory.

  18. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  19. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

    SciTech Connect

    Lee, Bong-Sub Darmawikarta, Kristof; Abelson, John R.; Raoux, Simone; Shih, Yen-Hao; Zhu, Yu

    2014-02-17

    The nanoscale crystal nuclei in an amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} bit in a phase change memory device were evaluated by fluctuation transmission electron microscopy. The quench time in the device (∼10 ns) afforded more and larger nuclei in the melt-quenched state than in the as-deposited state. However, nuclei were even more numerous and larger in a test structure with a longer quench time (∼100 ns), verifying the prediction of nucleation theory that slower cooling produces more nuclei. It also demonstrates that the thermal design of devices will strongly influence the population of nuclei, and thus the speed and data retention characteristics.

  20. Resistive switching characteristics and mechanisms in silicon oxide memory devices

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Wu, Xiaohan; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Lee, Jack C.

    2016-05-01

    Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)-compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical control, and external factors to help understand resistive switching (RS) mechanisms. Measured temperature effects, pulse response, and carrier transport behaviors lead to compact models of RS mechanisms and energy band diagrams in order to aid the development of computer-aided design for ultralarge-v scale integration. This chapter presents a comprehensive investigation of SiOx-based RS characteristics and mechanisms for the post-CMOS device era.

  1. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  2. RAM - A concept for reducing space payload costs.

    NASA Technical Reports Server (NTRS)

    Powell, D. J.

    1972-01-01

    The post-Apollo era in manned space flight will be dominated in the short term by development of the space shuttle as an economical transportation system for payloads to low earth orbit. Research and Applications Modules (RAM) are a related group of shuttle-launched carriers for such payloads which can be used many times over, thus effecting great savings over currently conventional methods of implementing a program of this type. In order to maximize the potential savings, development and unit costs of the RAM vehicles must be minimized. All of the mission and operating modes can be covered in an economical fashion by the use of only three basic RAM elements - a pressurized module, an unpressurized pallet, and a pressurizable free-flying unit utilized in several combinations. These have been developed as a least cost approach through the consideration of such cost/weight related drivers as available crew size, separability of costly subsystems for multiple use, easy accessibility for maintenance/refurbishment for reuse, and a maximum commonality of hardware with existing and projected space projects.

  3. Hyperlink format, categorization abilities and memory span as contributors to deaf users hypertext access.

    PubMed

    Fajardo, Inmaculada; Farjardo, Inmaculada; Arfé, Barbara; Benedetti, Patrizia; Altoé, Gianmarco

    2008-01-01

    Sixty deaf and hearing students were asked to search for goods in a Hypertext Supermarket with either graphical or textual links of high typicality, frequency, and familiarity. Additionally, they performed a picture and word categorization task and two working memory span tasks (spatial and verbal). Results showed that deaf students were faster in graphical than in verbal hypertext when the number of visited pages per search trial was blocked. Regardless of stimuli format, accuracy differences between groups did not appear, although deaf students were slower than hearing students in both Web search and categorization tasks (graphical or verbal). No relation between the two tasks was found. Correlation analyses showed that deaf students with higher spatial span were faster in graphical Web search, but no correlations emerged between verbal span and verbal Web search. A hypothesis of different strategies used by the two groups for searching information in hypertext is formulated. It is suggested that deaf users use a visual-matching strategy more than a semantic approach to make navigation decisions.

  4. Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

    NASA Astrophysics Data System (ADS)

    Hu, C. Y.

    2016-12-01

    The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

  5. Optical addressing technique for a CMOS RAM

    NASA Technical Reports Server (NTRS)

    Wu, W. H.; Bergman, L. A.; Allen, R. A.; Johnston, A. R.

    1988-01-01

    Progress on optically addressing a CMOS RAM for a feasibility demonstration of free space optical interconnection is reported in this paper. The optical RAM chip has been fabricated and functional testing is in progress. Initial results seem promising. New design and SPICE simulation of optical gate cell (OGC) circuits have been carried out to correct the slow fall time of the 'weak pull down' OGC, which has been characterized experimentally. Methods of reducing the response times of the photodiodes and the associated circuits are discussed. Even with the current photodiode, it appears that an OGC can be designed with a performance that is compatible with a CMOS circuit such as the RAM.

  6. Transient simulation of ram accelerator flowfields

    NASA Astrophysics Data System (ADS)

    Drabczuk, Randall P.; Rolader, G.; Dash, S.; Sinha, N.; York, B.

    1993-01-01

    This paper describes the development of an advanced computational fluid dynamic (CFD) simulation capability in support of the USAF Armament Directorate ram accelerator research initiative. The state-of-the-art CRAFT computer code has been specialized for high fidelity, transient ram accelerator simulations via inclusion of generalized dynamic gridding, solution adaptive grid clustering, and high pressure thermo-chemistry. Selected ram accelerator simulations are presented that serve to exhibit the CRAFT code capabilities and identify some of the principle research/design Issues.

  7. Transient simulation of ram accelerator flowfields

    NASA Astrophysics Data System (ADS)

    Sinha, N.; York, B. J.; Dash, S. M.; Drabczuk, R.; Rolader, G. E.

    1992-10-01

    This paper describes the development of an advanced computational fluid dynamic (CFD) simulation capability in support of the U.S. Air Force Armament Directorate's ram accelerator research initiative. The state-of-the-art CRAFT computer code has been specialized for high fidelity, transient ram accelerator simulations via inclusion of generalized dynamic gridding, solution adaptive grid clustering, high pressure thermochemistry, etc. Selected ram accelerator simulations are presented which serve to exhibit the CRAFT code's capabilities and identify some of the principal research/design issues.

  8. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    SciTech Connect

    Tomczak, Y.; Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A.; Liu, E.

    2016-01-25

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  9. RAMS (Risk Analysis - Modular System) methodology

    SciTech Connect

    Stenner, R.D.; Strenge, D.L.; Buck, J.W.

    1996-10-01

    The Risk Analysis - Modular System (RAMS) was developed to serve as a broad scope risk analysis tool for the Risk Assessment of the Hanford Mission (RAHM) studies. The RAHM element provides risk analysis support for Hanford Strategic Analysis and Mission Planning activities. The RAHM also provides risk analysis support for the Hanford 10-Year Plan development activities. The RAMS tool draws from a collection of specifically designed databases and modular risk analysis methodologies and models. RAMS is a flexible modular system that can be focused on targeted risk analysis needs. It is specifically designed to address risks associated with overall strategy, technical alternative, and `what if` questions regarding the Hanford cleanup mission. RAMS is set up to address both near-term and long-term risk issues. Consistency is very important for any comparative risk analysis, and RAMS is designed to efficiently and consistently compare risks and produce risk reduction estimates. There is a wide range of output information that can be generated by RAMS. These outputs can be detailed by individual contaminants, waste forms, transport pathways, exposure scenarios, individuals, populations, etc. However, they can also be in rolled-up form to support high-level strategy decisions.

  10. Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2016-08-01

    The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at V READ = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

  11. Flexible transparent memory cell: bipolar resistive switching via indium-tin oxide nanowire networks on a poly(dimethylsiloxane) substrate

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Tian, Zhenhuan; Shang, Geng; Wang, Jiangteng; Li, Yufeng; Yun, Feng

    2016-11-01

    This report describes the fabrication and resistive switching (RS) characteristics of a novel flexible transparent (FT) resistive random access memory (ReRAM) device with a Ag/indium-tin oxide (ITO) nanowire network/ITO capacitor deposited on a PDMS substrate. The transmittance of the device is ˜70% in the visible region, and it exhibits a stable high-resistance state (HRS) to low-resistance state (LRS) ratio (HRS/LRS ratio) in different bending states. The RS characteristics are attributed to the congregate state of oxygen vacancies at different voltages, and the difference between positive and negative bending is mainly contributed by the effect of stress on the conductive layer. The FT-ReRAM can be used as nonvolatile memory element in future flexible transparent devices.

  12. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    SciTech Connect

    Munira, Kamaram; Visscher, P. B.

    2015-05-07

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  13. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    SciTech Connect

    Pandey, Sumeet C. Meade, Roy; Sandhu, Gurtej S.

    2015-02-07

    We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  14. Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

    NASA Astrophysics Data System (ADS)

    Pandey, Sumeet C.; Meade, Roy; Sandhu, Gurtej S.

    2015-02-01

    We present numerical results from atomistic simulations of Cu in SiO2 and Al2O3, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 1020 cm-3 and 3.41 × 1022 cm-3) in bulk oxides are presented. The metal-insulator interfaces result in up to a ˜4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

  15. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

    SciTech Connect

    Dawson, J. A. Guo, Y.; Robertson, J.

    2015-09-21

    Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.

  16. Fabrication of resistive switching memory based on solution processed PMMA-HfO x blended thin films

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Won; Cho, Won-Ju

    2017-02-01

    In this study, we developed PMMA-HfO x blended resistive random access memory (ReRAM) devices using solution processing to overcome the drawbacks of the individual organic and inorganic materials. Resistive switching behaviors of solution-processed PMMA, PMMA-HfO x , and HfO x film-based ReRAM devices were investigated. The poor electrical characteristic of PMMA and brittle mechanical properties of HfO x can be improved by blending PMMA and HfO x together. The PMMA-HfO x blended ReRAM device exhibited a larger memory window, stable endurance and retention, a lower operation power, and better set/reset voltage distributions. Furthermore, these new systems featured multilevel conduction states at different reset bias for non-volatile multilevel memory applications. Therefore, solution-processed PMMA-HfO x blended films are a promising material for non-volatile memory devices on flexible or wearable electronic systems.

  17. Nonvolatile memory technology at Sandia National Laboratories

    SciTech Connect

    Sokel, R.J.; Dodson, W.H.; Knoll, M.G.

    1981-01-01

    The nonvolatile memory program at Sandia National Laboratories is discussed with special emphasis on the relationship between technology and design. Three different MNOS technologies which have been developed for EAROM, RAM, and EEPROM applications are considered.

  18. COS Dump Test and Verification of COS Memory Loads

    NASA Astrophysics Data System (ADS)

    Welty, Alan

    2009-07-01

    This proposal is a test and verification of the COS dump of memory capability.Areas of Control Section {CS} to dump include: EXEC RAM, EEPROM, and CS PROM {with the CS in Operate}. Areas of DIB memory to dump include: DIB RAM and DIB PROM {with the DIB in Operate}. Areas of DCE memory to dump include: the DCE code image. Note that the DIB and DCE memory must first be copied to CS buffer RAM as images, which are then dumped.Supports Activity COS-02

  19. HyRAM Testing Strategy and Quality Design Elements.

    SciTech Connect

    Reynolds, John Thomas

    2014-12-01

    Strategy document and tentative schedule for testing of HyRAM, a software toolkit that integrates data and methods relevant to assessing the safety of hydrogen fueling and storage infrastructure. Because proposed and existing features in HyRAM that support testing are important factors in this discussion, relevant design considerations of HyRAM are also discussed. However, t his document does not cover all of HyRAM desig n, nor is the full HyRAM software development schedule included.

  20. Epidemiology of Haemophilus somnus in young rams.

    PubMed Central

    Lees, V W; Meek, A H; Rosendal, S

    1990-01-01

    The prevalence of Haemophilus somnus in the prepuce of young rams was examined. Of 473 rams entering Record of Performance (ROP) stations at 50 days of age, 43 (9.1%) were positive. Average daily gain was not affected by Haemophilus status, but was influenced by breed of ram. Suffolks were predicted to gain 0.515 kg daily compared to 0.427 kg for a group combining all other breeds. Using logistic regression to identify risk factors for individual H. somnus infection, rams in 1989 were 0.382 times as likely to be infected as rams in 1988, and Suffolks were 0.314 times as likely to be infected as the other breeds group, but these factors were not significant at the flock level. Of 80 eligible flocks of origin, 22 (27.5%) were classified as infected with H. somnus, based on rams submitted to the ROP station. Infected flocks contributed 133 rams, 43 (32.3%) of which were positive. There was no association between H. somnus status and lambing percent of the percent of abortions and stillbirths, but there was a statistically significant association with the percent of ewes which failed to lamb. In the model developed, 6% of the bred ewes in noninfected flocks failed to lamb, compared to a rate of 12% in infected flocks. These results suggest H. somnus may influence ewe fertility earlier, rather than later in gestation. Purchasing replacement animals and having cattle on the farm were risk factors for Haemophilus infection in the flock. Where replacements had been purchased within the previous year, the risk of flock infection rose 8.5 times, and on farms having cattle as well as sheep, the risk rose 13.2 times.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:2379113

  1. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    SciTech Connect

    Fang, Runchen; Yu, Shimeng; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh

    2014-05-05

    The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

  2. Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

    NASA Technical Reports Server (NTRS)

    Croley, D. R.; Garrett, H. B.; Murphy, G. B.; Garrard,T. L.

    1995-01-01

    The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU

  3. Fabrication and properties of nanoscale multiferroic heterostructures for application in magneto-electric random access memory (MERAM) devices

    NASA Astrophysics Data System (ADS)

    Kim, Gunwoo

    Magnetoelectric random access memory (MERAM) has emerged as a promising new class of non-volatile solid-state memory device. It offers nondestructive reading along with low power consumption during the write operation. A common implementation of MERAM involves use of multiferroic tunneling junctions (MFTJs), which besides offering non-volatility are both electrically and magnetically tunable. Fundamentally, a MFTJ consists of a heterostructure of an ultrathin multiferroic or ferroelectric material as the active tunneling barrier sandwiched between ferromagnetic electrodes. Thereby, the MFTJ exhibits both tunnel electroresistance (TER) and tunnel magnetoresistance (TMR) effects with application of an electric and magnetic field, respectively. In this thesis work, we have developed two-dimensional (2D) thin-film multiferroic heterostructure METJ prototypes consisting of ultrathin ferroelectric BaTiO3 (BTO) layer and a conducting ferromagnetic La0.67Sr 0.33MnO3 (LSMO) electrode. The heteroepitaxial films are grown using the pulsed laser deposition (PLD) technique. This oxide heterostructure offers the opportunity to study the nano-scale details of the tunnel electroresistance (TER) effect using scanning probe microscopy techniques. We performed the measurements using the MFP-3D (Asylum Research) scanning probe microscope. The ultrathin BTO films (1.2-2.0 nm) grown on LSMO electrodes display both ferro- and piezo-electric properties and exhibit large tunnel resistance effect. We have explored the growth and properties of one-dimensional (1D) heterostructures, referred to as multiferoric nanowire (NW) heterostructures. The ferromagnetic/ferroelectric composite heterostructures are grown as sheath layers using PLD on lattice-matched template NWs, e.g. MgO, that are deposited by chemical vapor deposition utilizing the vapor-liquid-solid (VLS) mechanism. The one-dimensional geometry can substantially overcome the clamping effect of the substrate present in two

  4. Competition Between Different Social Ranked Rams has Similar Effects on Testosterone and Sexual Behaviour Throughout the Year.

    PubMed

    Ungerfeld, R; Lacuesta, L

    2015-12-01

    Dominant rams have preferential access to females, as they frequently interrupt sexual behaviour from subordinated. Testosterone concentrations are directly linked to sexual and aggressive behaviour and have important variations along the year. Therefore, it may be expected that the effects of dominance relationships on reproductive behaviour differ according to testosterone concentrations, and thus to the period of the year. The aim of this study was to compare the effects of dominance relationships on testosterone and sexual behaviour in different moments of the year in rams. Twelve rams were maintained in a single group. Social rank was determined in January (maximum reproductive development), May (regression of the reproductive status) and August (lowest reproductive activity), and the four rams with higher (HR) and the four with lower (LR) success index were used. Testosterone serum concentration was weekly measured four times during each experimental period. Sexual behaviour was evaluated in each period with an oestrous ewe, and with the oestrous ewe and another ram from the other social rank (each HR with each LR ram). Testosterone concentration was greater in HR than LR rams in January (p = 0.03), and all the behaviours were displayed more frequently in non-competitive than in competitive tests (p < 0.05). Rams modified their sexual strategy in competitive environments decreasing the display of sexual behaviour independently of their social status. This effect was observed consistently throughout the year: high-ranked rams have greater testosterone concentrations than LR rams only during the pre-rut, when they naturally compete to join the groups of ewes.

  5. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

    PubMed

    Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

    2017-02-22

    Al2O3- or HfO2-based nanocomposite structures with embedded CoPtx nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPtx NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPtx NCs, ALD-derived Pt/oxide/100 cycle-CoPtx NCs/TiN/SiO2/Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10(2)) of OFF/ON states, better switching endurance up to 10(4) cycles, and longer data retention over 10(5) s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPtx NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPtx NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPtx NCs can effectively improve the formation of conducting filaments due to the CoPtx NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

  6. The future of memory

    NASA Astrophysics Data System (ADS)

    Marinella, M.

    In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

  7. Seasonal profiles of melatonin in adult rams.

    PubMed

    Sheikheldin, M A; Howland, B E; Palmer, W M

    1992-03-01

    The objective of this study was to investigate the seasonal changes in melatonin profiles based on frequently collected samples in adult rams maintained under simulated natural photoperiod. In a group of six rams, the seasonal changes of melatonin were characterized in samples collected at 10-min intervals for an equal period before and after the median of the scotophase during the spring (March) and the autumn (September) equinoxes, and also during the summer (June) and the winter (December) solstices. In an additional two rams, the rapid changes in melatonin concentrations were investigated in samples drawn at 2-min intervals for a 2-hr period before and after the median of the scotophase, but only during the summer and the winter solstices. The results show that in adult rams there is a distinct seasonal variation in the nightly rise of melatonin (P less than 0.01). Mean concentrations in June and September were higher than in March or December (P less than 0.05). There was no difference between the means in June or September. However, the means in March were lower than in December (P less than 0.05). Rapid changes in melatonin concentrations occurred in samples collected either at 10-min or 2-min intervals. In rams sampled at 2-min intervals, mean melatonin values in June were also higher than in December (P less than 0.01). The results suggest that there are distinct seasonal changes in melatonin concentrations in the ram and that rapid changes in melatonin concentrations reflect pulsatile secretion.

  8. Space testing of LSI memories

    NASA Astrophysics Data System (ADS)

    Ueno, S.; Suzuki, K.; Nakajima, K.; Sakagawa, Y.; Hayashi, T.

    LSI memory soft error was tested in space on 64K-bit Dynamic RAM (n MOS), 16K-bit Static RAM (n MOS), and 1K-bit Static RAM (C MOS), using a sounding rocket. These LSIs had a 161 kbyte memory capacity. The test data ('1' or '0') were written and read out cyclically, and compared with the original data. If bit error was detected, error data were transmitted by telemetry. Vibration and thermal vacuum tests led to the conclusion that the LSI test equipment sufficiently satisfied the requirements to be loaded on the sounding rocket. No error was observed during the flight. LSI memories were not influenced by the launch environment or cosmic rays. Analytical results of the flight data are also discussed in this paper.

  9. HyRAM (Hydrogen Risk Assessment Models) v. 1.0

    SciTech Connect

    Groth, Katrina M.; Hecht, Ethan S.; Reynolds, John T.; Blaylock, Myra L.; Ekoto, Isaac W.; Walkup, Gregory W.

    2016-02-17

    HyRAM is a software toolkit for conducting quantitative risk assessment (QRA) and consequence modeling for hydrogen infrastructure and transportation systems. HyRAM contains validated, simplified hydrogen behavior models, a standardized QRA approach, and engineering models and generic data relevant to hydrogen installations. HyRAM 1.0 was developed by Sandia National Laboratories for the U. S. Department of Energy to increase access to technical data about hydrogen and to enable the use of that data to support development and revision of national and international codes and standards with risk assessment and consequence modeling. The HyRAM toolkit integrates analytical and probabilistic models for quantifying accident scenarios, predicting physical effects, and characterizing the impact of hydrogen hazards (including thermal effects from jet fires and overpressure effects from deflagrations in confined areas) on people and structures. HyRAM incorporates generic probabilities for equipment failures for nine types of components, and probabilistic models for the impact of heat flux on humans and structures, with computationally and experimentally validated analytical first order models of hydrogen release and flame physics. Version 1 can be used to quantify the risk and consequences associated with gaseous hydrogen releases from user-defined hydrogen installations.

  10. Ram side of Wake Shield Facility

    NASA Technical Reports Server (NTRS)

    1994-01-01

    The ram side of the Wake Shield Facility (WSF) is in the grasp of the Space Shuttle Discovery's Remote Manipulator System (RMS) arm in this 70mm frame. Clouds over the Atlantic Ocean and the blackness of space share the backdrop for the picture.

  11. A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

    SciTech Connect

    Hur, Ji-Hyun E-mail: jeonsh@korea.ac.kr; Lee, Dongsoo; Jeon, Sanghun E-mail: jeonsh@korea.ac.kr

    2015-11-16

    A model that describes bilayered bipolar resistive random access memory (BL-ReRAM) switching in oxide with a large band gap is presented. It is shown that, owing to the large energy barrier between the electrode and thin oxide layer, the electronic conduction is dominated by trap-assisted tunneling. The model is composed of an atomic oxygen vacancy migration model and an electronic tunneling conduction model. We also show experimentally observed three-resistance-level switching in Ru/ZrO{sub 2}/TaO{sub x} BL-ReRAM that can be explained by the two types of traps, i.e., shallow and deep traps in ZrO{sub 2}.

  12. Memory protection

    NASA Technical Reports Server (NTRS)

    Denning, Peter J.

    1988-01-01

    Accidental overwriting of files or of memory regions belonging to other programs, browsing of personal files by superusers, Trojan horses, and viruses are examples of breakdowns in workstations and personal computers that would be significantly reduced by memory protection. Memory protection is the capability of an operating system and supporting hardware to delimit segments of memory, to control whether segments can be read from or written into, and to confine accesses of a program to its segments alone. The absence of memory protection in many operating systems today is the result of a bias toward a narrow definition of performance as maximum instruction-execution rate. A broader definition, including the time to get the job done, makes clear that cost of recovery from memory interference errors reduces expected performance. The mechanisms of memory protection are well understood, powerful, efficient, and elegant. They add to performance in the broad sense without reducing instruction execution rate.

  13. Projectile Combustion Effects on Ram Accelerator Performance

    NASA Astrophysics Data System (ADS)

    Chitale, Saarth Anjali

    University of Washington Abstract Projectile Combustion Effects on Ram Accelerator Performance Saarth Anjali Chitale Chair of the Supervisory Committee: Prof. Carl Knowlen William E. Boeing Department of Aeronautics and Astronautics The ram accelerator facility at the University of Washington is used to propel projectiles at supersonic velocities. This concept is similar to an air-breathing ramjet engine in that sub-caliber projectiles, shaped like the ramjet engine center-body, are shot through smooth-bore steel-walled tubes having an internal diameter of 38 mm. The ram accelerator propulsive cycles operate between Mach 2 to 10 and have the potential to accelerate projectile to velocities greater than 8 km/s. The theoretical thrust versus Mach number characteristics can be obtained using knowledge of gas dynamics and thermodynamics that goes into the design of the ram accelerator. The corresponding velocity versus distance profiles obtained from the test runs at the University of Washington, however, are often not consistent with the theoretical predictions after the projectiles reach in-tube Mach numbers greater than 4. The experimental velocities are typically greater than the expected theoretical predictions; which has led to the proposition that the combustion process may be moving up onto the projectile. An alternative explanation for higher than predicted thrust, which is explored here, is that the performance differences can be attributed to the ablation of the projectile body which results in molten metal being added to the flow of the gaseous combustible mixture around the projectile. This molten metal is assumed to mix uniformly and react with the gaseous propellant; thereby enhancing the propellant energy release and altering the predicted thrust-Mach characteristics. This theory predicts at what Mach number the projectile will first experience enhanced thrust and the corresponding velocity-distance profile. Preliminary results are in good agreement

  14. 24. WESTERNMOST HYDRAULIC RAM IN NORTH BANK, LOWER LEVEL OF ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    24. WESTERNMOST HYDRAULIC RAM IN NORTH BANK, LOWER LEVEL OF STAGE, LOOKING SOUTH. NOTE PIN CONNECTION BETWEEN STAGE FLOOR AND RAM. - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  15. 116. Stage mezzanine level floor structure. North rams (type D), ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    116. Stage mezzanine level floor structure. North rams (type D), facing south-southwest. The right hand ram is the same one visible from above in IL-1007-114. - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  16. 3. Light tower, view northwest, south side Ram Island ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. Light tower, view northwest, south side - Ram Island Light Station, Ram Island, south of Ocean Point & just north of Fisherman Island, marking south side of Fisherman Island Passage, Ocean Point, Lincoln County, ME

  17. Detrimental effect of interfacial Dzyaloshinskii-Moriya interaction on perpendicular spin-transfer-torque magnetic random access memory

    SciTech Connect

    Jang, Peong-Hwa; Lee, Seo-Won E-mail: kj-lee@korea.ac.kr; Song, Kyungmi; Lee, Seung-Jae; Lee, Kyung-Jin E-mail: kj-lee@korea.ac.kr

    2015-11-16

    Interfacial Dzyaloshinskii-Moriya interaction in ferromagnet/heavy metal bilayers is recently of considerable interest as it offers an efficient control of domain walls and the stabilization of magnetic skyrmions. However, its effect on the performance of perpendicular spin transfer torque memory has not been explored yet. We show based on numerical studies that the interfacial Dzyaloshinskii-Moriya interaction decreases the thermal energy barrier while increases the switching current. As high thermal energy barrier as well as low switching current is required for the commercialization of spin torque memory, our results suggest that the interfacial Dzyaloshinskii-Moriya interaction should be minimized for spin torque memory applications.

  18. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

    PubMed

    Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Kim, Chang-Jung; Jeon, Sanghun; Chung, U-In; Yoo, In-Kyeong; Park, Gyeong-Su; Han, Seungwu; Hwang, In Rok; Park, Bae-Ho

    2011-11-01

    Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of nanometers, there is insufficient volume available to store charge. Also, process temperatures higher than 800 °C make silicon incompatible with three-dimensional (3D) stacking structures. Here we present a device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory using resistance switching. It is demonstrated that NiO films are scalable to around 30 nm and compatible with multilevel cell technology. The device unit can be a building block for 3D stacking structure because of its simple structure and constituent, high performance, and process temperature lower than 300 °C. Memory resistance switching of NiO storage element is accompanied by an increase in density of grain boundary while threshold resistance switching of NiO switch element is controlled by current flowing through NiO film.

  19. Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

    SciTech Connect

    Thomas, Luc Jan, Guenole; Le, Son; Wang, Po-Kang

    2015-04-20

    The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

  20. Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In{sub 2}O{sub 3}) nanowire phase change random access memory

    SciTech Connect

    Jin, Bo; Lee, Jeong-Soo E-mail: ljs6951@postech.ac.kr; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I.; Pi, Dong-Hai; Seop Kim, Hyoung; Meyyappan, M. E-mail: ljs6951@postech.ac.kr

    2014-03-10

    The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In{sub 2}O{sub 3} nanowires (Ga:In{sub 2}O{sub 3} NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R{sub 0} ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (R{sub th}) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In{sub 2}O{sub 3} NW, compared to the 2.1% Ga:In{sub 2}O{sub 3} NW. The excellent characteristics of Ga-doped In{sub 2}O{sub 3} nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.

  1. Structural changes and conductance thresholds in metal-free intrinsic SiO{sub x} resistive random access memory

    SciTech Connect

    Mehonic, Adnan E-mail: t.kenyon@ucl.ac.uk; Buckwell, Mark; Montesi, Luca; Garnett, Leon; Hudziak, Stephen; Kenyon, Anthony J. E-mail: t.kenyon@ucl.ac.uk; Fearn, Sarah; Chater, Richard; McPhail, David

    2015-03-28

    We present an investigation of structural changes in silicon-rich silicon oxide metal-insulator-metal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result of switching. We confirm that protrusions formed at the surface of samples during switching are bubbles, which are likely to be related to the outdiffusion of oxygen. This supports existing models for valence-change based resistive switching in oxides. In addition, we describe parallel linear and nonlinear conduction pathways and suggest that the conductance quantum, G{sub 0}, is a natural boundary between the high and low resistance states of our devices.

  2. The Memory Metal Minimal Access Cage: A New Concept in Lumbar Interbody Fusion—A Prospective, Noncomparative Study to Evaluate the Safety and Performance

    PubMed Central

    Kok, D.; Donk, R. D.; Wapstra, F. H.; Veldhuizen, A. G.

    2012-01-01

    Study Design/Objective. A single-centre, prospective, non-comparative study of 25 patients to evaluate the performance and safety of the Memory Metal Minimal Access Cage (MAC) in Lumbar Interbody Fusion. Summary of Background Data. Interbody fusion cages in general are designed to withstand high axial loads and in the meantime to allow ingrowth of new bone for bony fusion. In many cages the contact area with the endplate is rather large leaving a relatively small contact area for the bone graft with the adjacent host bone. MAC is constructed from the memory metal Nitinol and builds on the concept of sufficient axial support in combination with a large contact area of the graft facilitating bony ingrowth and ease in minimal access implantation due to its high deformability. Methods. Twenty five subjects with a primary diagnosis of disabling back and radicular leg pain from a single level degenerative lumbar disc underwent an interbody fusion using MAC and pedicle screws. Clinical performance was evaluated prospectively over 2 years using the Oswestry Disability Index (ODI), Short Form 36 questionnaire (SF-36) and pain visual analogue scale (VAS) scores. The interbody fusion status was assessed using conventional radiographs and CT scan. Safety of the device was studied by registration of intra- and post-operative adverse effects. Results. Clinical performance improved significantly (P < .0018), CT scan confirmed solid fusion in all 25 patients at two year follow-up. In two patients migration of the cage occurred, which was resolved uneventfully by placing a larger size at the subsequent revision. Conclusions. We conclude that the Memory Metal Minimal Access Cage (MAC) resulted in 100% solid fusions in 2 years and proved to be safe, although two patients required revision surgery in order to achieve solid fusion. PMID:22567409

  3. 39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yasue; Moriwaki, Shinichi; Kawasumi, Atsushi; Miyano, Shinji; Shinohara, Hirofumi

    2016-04-01

    We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at V DD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at V DD = 0.55 V. WWL-BST after read sensing scheme improves minimum operating voltage (V min) by 140 mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BST and WWL-BST has been developed using a 40 nm CMOS.

  4. Investigation of parasitic resistance and capacitance effects in nanoscaled FinFETs and their impact on static random-access memory cells

    NASA Astrophysics Data System (ADS)

    Huang, Bo-Rong; Meng, Fan-Hsuan; King, Ya-Chin; Lin, Chrong Jung

    2017-04-01

    A thorough investigation of the parasitic resistance and capacitance (RC) effects of a single-fin FinFET on logic CMOS devices and circuits is presented. As parasitic RC effects become increasingly prominent in nanoscaled FinFET technologies, they are critical to the overall device and circuit performance. In addition, the effects of dummy patterns as well as multifin structures are analyzed and modeled in detailed. By incorporating parasitic resistance and capacitance extracted by both measurement and simulation, the static and dynamic performance characteristics of standard six transistor static random-access memory (6T-SRAM) cells are comprehensively evaluated as an example of parasitic RC effects in this investigation.

  5. Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory

    SciTech Connect

    Zhang, Rui; Lou, Jen-Chung; Tsai, Tsung-Ming E-mail: tcchang@mail.phys.nsysu.edu.tw; Chang, Kuan-Chang; Huang, Syuan-Yong; Shih, Chih-Cheng; Pan, Jhih-Hong; Tung, Cheng-Wei; Chang, Ting-Chang E-mail: tcchang@mail.phys.nsysu.edu.tw; Chen, Kai-Huang; Young, Tai-Fa; Chen, Hsin-Lu; Chen, Jung-Hui; Chen, Min-Chen; Syu, Yong-En; Sze, Simon M.

    2013-12-21

    In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

  6. Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory

    NASA Astrophysics Data System (ADS)

    Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2016-06-01

    In this letter, we inserted a low dielectric constant (low-k) or high dielectric constant (high-k) material as a switching layer in indium-tin-oxide-based resistive random-access memory. After measuring the two samples, we found that the low-k material device has very low operating voltages (-80 and 110 mV for SET and RESET operations, respectively). Current fitting results were then used with the COMSOL software package to simulate electric field distribution in the layers. After combining the electrical measurement results with simulations, a conduction model was proposed to explain resistance switching behaviors in the two structures.

  7. Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

    NASA Astrophysics Data System (ADS)

    Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

    2017-01-01

    In this letter we demonstrate an operation method that effectively suppresses endurance degradation. After many operations, the off-state of resistance random access memory (RRAM) degrades. This degradation is caused by reduction of active oxygen ions participating in the set process, as determined by current fitting of current-voltage (I-V) curves obtained from the endurance test between the interval of seventy to one hundred million operations. To address this problem, we propose the application of constant voltage stress after every five million operations during the endurance test. The experimental result shows that this method can maintain oxygen ions at the proper depth in the electrode and improve RRAM reliability.

  8. Effects of ram preexposure and ram breed on fertility of ewes in summer breeding.

    PubMed

    Nugent, R A; Notter, D R; McClure, W H

    1988-07-01

    Suffolk x Rambouillet ewes were used in two consecutive years to test the ability of Dorset and Suffolk yearling rams to stimulate ovulation and estrus in early summer (late June and July) breeding. After spring weaning about June 1, ewes were randomly divided into three groups and for 2 wk either were isolated from rams or were preexposed to either yearling Dorset or Suffolk rams by penning of rams in proximity to ewes. Ewes then were rerandomized into two groups for joining with either yearling Dorset or Suffolk rams fitted with marking harnesses. Serum progesterone profiles and crayon marks were used as indicators of ovulation and estrus. Overall lambing rate was not different among preexposure treatments for the 2 yr. However, early lambing rate (in the first 14 d of lambing season) was significantly affected by preexposure group (24% for Dorset vs 9% for Suffolk and 10% for isolation), especially in the 2nd yr (31% for Dorset vs 8% for both Suffolk and isolation). Ewes preexposed to Dorsets also lambed 10 d earlier (P less than .05) than ewes preexposed to Suffolks in yr 2, but the groups did not differ in yr 1. Ewes exposed to Dorset rams for breeding had higher overall lambing rates than ewes bred to Suffolks (75% vs 54%), especially in the 1st yr (77% vs 48%). Lambs sired by Dorset rams were born 6 d earlier in yr 1 (P less than .05) but only 1 d earlier in yr 2. Data from both years indicate that Dorsets are superior to Suffolks in ability to sire lambs in fall lambing systems.

  9. Hybrid Composite Response to Hydraulic Ram

    DTIC Science & Technology

    1986-10-20

    braided E-Glass 1/8-inch diameter, braided Additional materials Styrofoam 2 lb/ft3 , closed cell Self- vulcanizing rubber 1/8 thick 7 JTCG/AS-86-T-001...conducted under the Survivable Composite Structures program funded by the JTCG/AS Structures and Materials Subcommittee. Under this project, NWC (Naval...Weapons Center), China Lake, Calif. was tasked with developing struc- tural and material techniques for reducing hydraulic ram damage to composite aircraft

  10. Spacecraft ram glow and surface temperature

    NASA Technical Reports Server (NTRS)

    Swenson, G. R.; Mende, S. B.; Llewellyn, E. J.

    1987-01-01

    Space shuttle glow intensity measurements show large differences when the data from different missions are compared. In particular, on the 41-G mission the space shuttle ram glow was observed to display an unusually low intensity. Subsequent investigation of this measurement and earlier measurements suggest that there was a significant difference in temperature of the glow producing ram surfaces. The highly insulating properties coupled with the high emissivity of the shuttle tile results in surfaces that cool quickly when exposed to deep space on the night side of the orbit. The increased glow intensity is consistent with the hypothesis that the glow is emitted from excited NO2. The excited NO2 is likely formed through three body recombination (OI + NO + M = NO2*) where ramming of OI interacts with weakly surface bound NO. The NO is formed from atmospheric OI and NI which is scavenged by the spacecraft moving through the atmosphere. It is postulated that the colder surfaces retain a thicker layer of NO thereby increasing the probability of the reaction. It has been found from the glow intensity/temperature data that the bond energy of the surface bound precursor, leading to the chemical recombination producing the glow, is approximately 0.14 eV. A thermal analysis of material samples of STS-8 was made and the postulated temperature change of individual material samples prior to the time of glow measurements above respective samples are consistent with the thermal effect on glow found for the orbiter surface.

  11. Ram Pressure Stripping: Observations Meet Simulations

    NASA Astrophysics Data System (ADS)

    Past, Matthew; Ruszkowski, Mateusz; Sharon, Keren

    2017-01-01

    Ram pressure stripping occurs when a galaxy falls into the potential well of a cluster, removing gas and dust as the galaxy travels through the intracluster medium. This interaction leads to filamentary gas tails stretching behind the galaxy and plays an important role in galaxy evolution. Previously, these “jellyfish” galaxies had only been observed in nearby clusters, but recently, higher redshift (z > 0.3) examples have been found from HST data imaging.Recent work has shown that cosmic rays injected by supernovae can cause galactic disks to thicken due to cosmic ray pressure. We run three-dimensional magneto-hydrodynamical simulations of ram pressure stripping including cosmic rays to compare to previous models. We study how the efficiency of the ram pressure stripping of the gas, and the morphology of the filamentary tails, depend on the magnitude of the cosmic ray pressure support. We generate mock X-ray images and radio polarization data. Simultaneously, we perform an exhaustive search of the HST archive to increase the sample of jellyfish galaxies and compare selected cases to simulations.

  12. Urinary tract ultrasonography in normal rams and in rams with obstructive urolithiasis

    PubMed Central

    Braun, Ueli; Schefer, Ursula; Föhn, Josef

    1992-01-01

    We determined the position, dimensions, and structure of the kidneys, ureters, bladder, and urethra in 20 healthy, adult rams by use of ultrasonography. The findings were compared with those of seven rams with obstructive urolithiasis, thus establishing criteria for the diagnosis of urolithiasis via ultrasonography. A 5.0 MHz convex transducer was placed over the right paralumbar fossa to examine the kidneys, and a 5.0 MHz linear rectal transducer was used to examine the bladder and urethra transrectally. All examinations were performed on standing rams. The left kidney had a length of 8.4 ± 0.3 cm (mean ± SD), a width of 4.7 ± 0.3 cm, and a depth of 4.4 ± 0.3 cm. The diameter of the renal sinus of the left kidney was 1.5 ± 0.2 cm. The circumference of the medullary pyramids measured 2.8 ± 0.3 cm. Similar ultrasonographic measurements were obtained for the right kidney. The mean diameter of the bladder of 12 rams was 7.5 ± 2.8 cm. The diameter of the bladder could not be determined in the remaining eight rams because it was greater than 10 cm and therefore beyond the penetration depth of the scanner. The only part of the urethra which could be visualized ultrasonographically was the internal urethral orifice. It had a diameter of 0.2 ± 0.1 cm. Ultrasonographic examination of seven rams with obstructive urolithiasis revealed a markedly dilated urethra and urinary bladder. Due to severe cystitis, the contents of the urinary bladder appeared as multiple, tiny, uniformly distributed echoes. The renal pelvis and medullary pyramids of both kidneys were dilated in four rams. In two rams, uroperitoneum and accumulation of urine in the abdomen were diagnosed via ultrasonography. In one ram this was due to a ruptured ureter and in one to a ruptured bladder. The results of this study indicate that ultrasonography is a useful aid in the diagnosis of obstructive urolithiasis. ImagesFigure 2.Figure 3.Figure 4.Figure 5.Figure 6.Figure 7. PMID:17424090

  13. A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching

    NASA Astrophysics Data System (ADS)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2017-04-01

    A high-density nonvolatile associative memory (NV-AM) based on spin transfer torque magnetoresistive random access memory (STT-MRAM), which achieves highly concurrent and ultralow-power nearest neighbor search with full adaptivity of the template data format, has been proposed and fabricated using the 90 nm CMOS/70 nm perpendicular-magnetic-tunnel-junction hybrid process. A truly compact current-mode circuitry is developed to realize flexibly controllable and high-parallel similarity evaluation, which makes the NV-AM adaptable to any dimensionality and component-bit of template data. A compact dual-stage time-domain minimum searching circuit is also developed, which can freely extend the system for more template data by connecting multiple NM-AM cores without additional circuits for integrated processing. Both the embedded STT-MRAM module and the computing circuit modules in this NV-AM chip are synchronously power-gated to completely eliminate standby power and maximally reduce operation power by only activating the currently accessed circuit blocks. The operations of a prototype chip at 40 MHz are demonstrated by measurement. The average operation power is only 130 µW, and the circuit density is less than 11 µm2/bit. Compared with the latest conventional works in both volatile and nonvolatile approaches, more than 31.3% circuit area reductions and 99.2% power improvements are achieved, respectively. Further power performance analyses are discussed, which verify the special superiority of the proposed NV-AM in low-power and large-memory-based VLSIs.

  14. a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.

    PubMed

    Jiang, Xiaofan; Ma, Zhongyuan; Xu, Jun; Chen, Kunji; Xu, Ling; Li, Wei; Huang, Xinfan; Feng, Duan

    2015-10-28

    The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I-V) curves combined with the temperature dependence of the I-V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole-Frenkel (P-F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM.

  15. Complementary resistive switches for passive nanocrossbar memories.

    PubMed

    Linn, Eike; Rosezin, Roland; Kügeler, Carsten; Waser, Rainer

    2010-05-01

    On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits. As such they represent an interesting alternative to the conventional von Neumann based computer chip architectures. Crossbar architectures hold the promise of a significant reduction in energy consumption because of their ultimate scaling potential and because they allow for a local fusion of logic and memory, thus avoiding energy consumption by data transfer on the chip. However, the expected paradigm change has not yet taken place because the general problem of selecting a designated cell within a passive crossbar array without interference from sneak-path currents through neighbouring cells has not yet been solved satisfactorily. Here we introduce a complementary resistive switch. It consists of two antiserial memristive elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption.

  16. A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS

    NASA Technical Reports Server (NTRS)

    Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor); Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor)

    2004-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  17. Incorporation of RAM techniques into simulation modeling

    SciTech Connect

    Nelson, S.C. Jr.; Haire, M.J.; Schryver, J.C.

    1995-07-01

    This work concludes that reliability, availability, and maintainability (RAM) analytical techniques can be incorporated into computer network simulation modeling to yield an important new analytical tool. This paper describes the incorporation of failure and repair information into network simulation to build a stochastic computer model represents the RAM Performance of two vehicles being developed for the US Army: The Advanced Field Artillery System (AFAS) and the Future Armored Resupply Vehicle (FARV). The AFAS is the US Army`s next generation self-propelled cannon artillery system. The FARV is a resupply vehicle for the AFAS. Both vehicles utilize automation technologies to improve the operational performance of the vehicles and reduce manpower. The network simulation model used in this work is task based. The model programmed in this application requirements a typical battle mission and the failures and repairs that occur during that battle. Each task that the FARV performs--upload, travel to the AFAS, refuel, perform tactical/survivability moves, return to logistic resupply, etc.--is modeled. Such a model reproduces a model reproduces operational phenomena (e.g., failures and repairs) that are likely to occur in actual performance. Simulation tasks are modeled as discrete chronological steps; after the completion of each task decisions are programmed that determine the next path to be followed. The result is a complex logic diagram or network. The network simulation model is developed within a hierarchy of vehicle systems, subsystems, and equipment and includes failure management subnetworks. RAM information and other performance measures are collected which have impact on design requirements. Design changes are evaluated through ``what if`` questions, sensitivity studies, and battle scenario changes.

  18. Optimizing Clinical Drug Product Performance: Applying Biopharmaceutics Risk Assessment Roadmap (BioRAM) and the BioRAM Scoring Grid.

    PubMed

    Dickinson, Paul A; Kesisoglou, Filippos; Flanagan, Talia; Martinez, Marilyn N; Mistry, Hitesh B; Crison, John R; Polli, James E; Cruañes, Maria T; Serajuddin, Abu T M; Müllertz, Anette; Cook, Jack A; Selen, Arzu

    2016-11-01

    The aim of Biopharmaceutics Risk Assessment Roadmap (BioRAM) and the BioRAM Scoring Grid is to facilitate optimization of clinical performance of drug products. BioRAM strategy relies on therapy-driven drug delivery and follows an integrated systems approach for formulating and addressing critical questions and decision-making (J Pharm Sci. 2014,103(11): 3777-97). In BioRAM, risk is defined as not achieving the intended in vivo drug product performance, and success is assessed by time to decision-making and action. Emphasis on time to decision-making and time to action highlights the value of well-formulated critical questions and well-designed and conducted integrated studies. This commentary describes and illustrates application of the BioRAM Scoring Grid, a companion to the BioRAM strategy, which guides implementation of such an integrated strategy encompassing 12 critical areas and 6 assessment stages. Application of the BioRAM Scoring Grid is illustrated using published literature. Organizational considerations for implementing BioRAM strategy, including the interactions, function, and skillsets of the BioRAM group members, are also reviewed. As a creative and innovative systems approach, we believe that BioRAM is going to have a broad-reaching impact, influencing drug development and leading to unique collaborations influencing how we learn, and leverage and share knowledge.

  19. Investigation of Superdetonative Ram Accelerator Drive Modes

    DTIC Science & Technology

    1989-12-15

    s) 31 atm IV 0.6 C2 H 4 -20 2 - 3.3 CO2 291 (m/s) 16 atm I IFig. 11 Velocity profile in thermally choked and superdetonative ram accelerator modes...Accelerator Concept," Ph.D. Dissertation, Department of Aeronautics \\& Astronautics, University of Washington, Oct. 1989. I 22. Stull, D.R. and Prophet ...Physical Gas Dynamics, Wiley, New 3 York, 1985, Chap. VII. 2. Stull, D.R. and Prophet , H., "JANAF Thermochemical Tables, 2nd. Ed.," NSRDS- I Report 37

  20. In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories.

    PubMed

    Huang, Yu-Ting; Yu, Shih-Ying; Hsin, Cheng-Lun; Huang, Chun-Wei; Kang, Chen-Fang; Chu, Fu-Hsuan; Chen, Jui-Yuan; Hu, Jung-Chih; Chen, Lien-Tai; He, Jr-Hau; Wu, Wen-Wei

    2013-04-16

    Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

  1. SeaRAM: an evaluation of the safety of RAM transport by sea

    SciTech Connect

    McConnell, P.; Sorenson, K.B.; Carter, M.H.; Keane, M.P.; Keith, V.F.; Heid, R.J.

    1995-12-31

    SeaRAM is a multi-year Department of Energy (DOE) project designed to validate the safety of shipping radioactive materials (RAM) by sea. The project has an ultimate goal of developing and demonstrating analytic tools for performing comprehensive analyses to evaluate the risks to humans and the environment due to sea transport of plutonium, vitrified high-level waste (VHLW), and spent fuel associated with reprocessing and research reactors. To achieve this end, evaluations of maritime databases and structural an thermal analyses of particular severe collision and fire accidents have been and will continue to be conducted. Program management for SeaRAM is based at the DOE`s Office of Environmental Restoration. Technical activities for the project are being conducted at Sandia National Laboratories (SNL). Several private organizations are also involved in providing technical support, notably Engineering Computer Optecnomics, Inc. (ECO). The technical work performed for SeaRAM also supports DOE participation in an International Atomic Energy Agency (IAEA) Cooperative Research Program (CRP) entitled Accident Severity at Sea During Transport of Radioactive Material. This paper discusses activities performed during the first year of the project.

  2. PADDLEFISH BUCCAL FLOW VELOCITY DURING RAM SUSPENSION FEEDING AND RAM VENTILATION

    PubMed

    Cech; Cheer

    1994-01-01

    A micro-thermistor probe was inserted into the buccal cavity of freely swimming paddlefish to measure flow velocity during ram ventilation, ram suspension feeding and prey processing. Swimming speed was measured from videotapes recorded simultaneously with the buccal flow velocity measurements. Both swimming velocity and buccal flow velocity were significantly higher during suspension feeding than during ram ventilation. As the paddlefish shifted from ventilation to feeding, buccal flow velocity increased to approximately 60 % of the swimming velocity. During prey processing, buccal flow velocity was significantly higher than the swimming velocity, indicating that prey processing involves the generation of suction. The Reynolds number (Re) for flow at the level of the paddlefish gill rakers during feeding is about 30, an order of magnitude lower than the Re calculated previously for pump suspension-feeding blackfish. These data, combined with data available from the literature, indicate that the gill rakers of ram suspension-feeding teleost fishes may operate at a substantially lower Re than the rakers of pump suspension feeders.

  3. Read disturb errors in a CMOS static RAM chip

    NASA Astrophysics Data System (ADS)

    Wood, Steven H.; Marr, James C., IV; Nguyen, Tien T.; Padgett, Dwayne J.; Tran, Joe C.; Griswold, Thomas W.; Lebowitz, Daniel C.

    Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

  4. Remotely variable multiple bore ram system and method

    SciTech Connect

    Carnahan, D.A.

    1989-05-02

    A ram assembly is described for use in a ram type blow out preventer, comprising: a thrust rod defining a longitudinal axis; a ram block body interconnected to the rod and defining a vertical cylindrical and normal to the longitudinal axis of the thrust rod; a ram shoe preselected from a plurality of parts thereof having different bores, the shoe having a load shoulder with a vertical cylindrical pin hole extending through the shoulder, and further having pipe faces and a seal disposed between the pipe faces and circumscribing the shoe; and a lock pin means having a collet hole disposed in one end for releasably interconnecting the ram shoe and the ram block when the lock pin means, the lock pin hole, and the pin hole are coaligned in vertical registry with the lock pin means disposed in the lock pin hole and the pin hole. The patent also describes a method using a running tool suspended from a drill hole string for changing from a first location a pair of ram shoes releasably interconnected by pins to respective rams of a ram type blow out preventer.

  5. The rams horn in western history

    NASA Astrophysics Data System (ADS)

    Lubman, David

    2003-10-01

    The shofar or rams horn-one of the most ancient of surviving aerophones-may have originated with early Neolithic herders. The shofar is mentioned frequently and importantly in the Hebrew bible and in later biblical and post-biblical literature. Despite its long history, contemporary ritual uses, and profound symbolic significance to western religion, no documentation of shofar acoustical properties was found. Since ancient times, shepherds of many cultures have fashioned sound instruments from the horns of herd animals for practical and musical uses. Shepherd horns of other cultures exhibit an evolution of form and technology (e.g., the inclusion of finger holes). The shofar is unique in having retained its primitive form. It is suggested that after centuries of practical use, the shofar became emblematic of the shepherd culture. Ritual use then developed, which froze its form. A modern ritual rams horn played by an experienced blower was examined. This rather short horn was determined to have a source strength of 92 dB (A) at 1 m, a fundamental frequency near 420 Hz, and maximum power output between 1.2 and 1.8 kHz. Sample sounds and detection range estimates are provided.

  6. Ram Pressure Stripping of Galaxy JO201

    NASA Astrophysics Data System (ADS)

    Zhong, Greta; Tonnesen, Stephanie; Jaffé, Yara; Bellhouse, Callum; Bianca Poggianti

    2017-01-01

    Despite the discovery of the morphology-density relation more than 30 years ago, the process driving the evolution of spiral galaxies into S0s in clusters is still widely debated. Ram pressure stripping--the removal of a galaxy's interstellar medium by the pressure of the intracluster medium through which it orbits--may help explain galactic evolution and quenching in clusters. MUSE (Multi Unit Spectroscopic Explorer) observational data of galaxy JO201 in cluster Abell 85 reveal it to be a jellyfish galaxy--one with an H-alpha emitting gas tail on only one side. We model the possible orbits for this galaxy, constrained by the cluster mass profile, line of sight velocity, and projected distance from the cluster center. Using Enzo, an adaptive mesh refinement hydrodynamics code, we simulate effects of ram pressure on this galaxy for a range of possible orbits. We present comparisons of both the morphology and velocity structure of our simulated galaxy to the observations of H-alpha emission.

  7. ViSA: A Neurodynamic Model for Visuo-Spatial Working Memory, Attentional Blink, and Conscious Access

    ERIC Educational Resources Information Center

    Simione, Luca; Raffone, Antonino; Wolters, Gezinus; Salmas, Paola; Nakatani, Chie; Belardinelli, Marta Olivetti; van Leeuwen, Cees

    2012-01-01

    Two separate lines of study have clarified the role of selectivity in conscious access to visual information. Both involve presenting multiple targets and distracters: one "simultaneously" in a spatially distributed fashion, the other "sequentially" at a single location. To understand their findings in a unified framework, we propose a…

  8. Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics

    NASA Astrophysics Data System (ADS)

    Lu, Chao; Yu, Jue; Chi, Xiao-Wei; Lin, Guang-Yang; Lan, Xiao-Ling; Huang, Wei; Wang, Jian-Yuan; Xu, Jian-Fang; Wang, Chen; Li, Cheng; Chen, Song-Yan; Liu, Chunli; Lai, Hong-Kai

    2016-04-01

    A bipolar one-diode-one-resistor (1D1R) device with a Pt/HfO2/Ti/n-Si(001) structure was demonstrated. The 1D1R resistive random access memory (RRAM) device consists of a Ti/n-Si(001) diode and a Pt/HfO2/Ti resistive switching cell. By using the Ti layer as the shared electrode for both the diode and the resistive switching cell, the 1D1R device exhibits the property of stable self-compliance and the characteristic of robust resistive switching with high uniformity. The high/low resistance ratio reaches 103. The electrical RESET/SET curve does not deteriorate after 68 loops. Low-temperature studies show that the 1D1R RRAM device has a critical working temperature of 250 K, and at temperatures below 250 K, the device fails to switch its resistances.

  9. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    SciTech Connect

    Popovici, M. Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M.

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  10. Evaluation of in-plane local stress distribution in stacked IC chip using dynamic random access memory cell array for highly reliable three-dimensional IC

    NASA Astrophysics Data System (ADS)

    Tanikawa, Seiya; Kino, Hisashi; Fukushima, Takafumi; Koyanagi, Mitsumasa; Tanaka, Tetsu

    2016-04-01

    As three-dimensional (3D) ICs have many advantages, IC performances can be enhanced without scaling down of transistor size. However, 3D IC has mechanical stresses inside Si substrates owing to its 3D stacking structure, which induces negative effects on transistor performances such as carrier mobility changes. One of the mechanical stresses is local bending stress due to organic adhesive shrinkage among stacked IC chips. In this paper, we have proposed an evaluation method for in-plane local stress distribution in the stacked IC chips using retention time modulation of a dynamic random access memory (DRAM) cell array. We fabricated a test structure composed of a DRAM chip bonded on a Si interposer with dummy Cu/Sn microbumps. As a result, we clarified that the DRAM cell array can precisely evaluate the in-plane local stress distribution in the stacked IC chips.

  11. Chronic restricted access to 10% sucrose solution in adolescent and young adult rats impairs spatial memory and alters sensitivity to outcome devaluation.

    PubMed

    Kendig, Michael D; Boakes, Robert A; Rooney, Kieron B; Corbit, Laura H

    2013-08-15

    Although increasing consumption of sugar drinks is recognized as a significant public health concern, little is known about (a) the cognitive effects resulting from sucrose consumption; and (b) whether the long-term effects of sucrose consumption are more pronounced for adolescents. This experiment directly compared performance on a task of spatial learning and memory (the Morris Water Maze) and sensitivity to outcome devaluation following 28 days of 2-h/day access to a 10% sucrose solution in adolescent and young-adult Wistar rats. Sucrose groups developed elevated fasting blood glucose levels after the diet intervention, despite drawing <15% of calories from sucrose and gaining no more weight than controls. In subsequent behavioral testing, sucrose groups were impaired on the Morris Water Maze, with some residual deficits in spatial memory observed more than 6 weeks after the end of sucrose exposure. Further, results from outcome devaluation testing indicated that in the older cohort of rats, those fed sucrose showed reduced sensitivity to devaluation of the outcome, suggestive of differences in instrumental learning following sucrose exposure. Data provide strong evidence that sucrose consumption can induce deficits in spatial cognition and reward-oriented behavior at levels that resemble patterns of sugar drink consumption in young people, and which can remain long after exposure.

  12. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  13. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2016-12-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage (I-V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  14. Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

    SciTech Connect

    Oosthoek, J. L. M.; Kooi, B. J.; Voogt, F. C.; Attenborough, K.; Verheijen, M. A.; Hurkx, G. A. M.; Gravesteijn, D. J.

    2015-02-14

    Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The result of these observations in comparison with detailed electrical characterization showed (i) normal behavior for relatively long amorphous marks, resulting in a hyperbolic dependence between SET resistance and SET current, indicating a switching mechanism based on initially long and thin nanoscale crystalline filaments which thicken gradually, and (ii) anomalous behavior, which holds for relatively short amorphous marks, where initially directly a massive crystalline filament is formed that consumes most of the width of the amorphous mark only leaving minor residual amorphous regions at its edges. The present results demonstrate that even in (purposely) thick TEM samples, the TEM sample preparation hampers the probability to observe normal behavior and it can be debated whether it is possible to produce electrically switchable TEM specimen in which the memory cells behave the same as in their original bulk embedded state.

  15. Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory

    NASA Astrophysics Data System (ADS)

    Ye, Cong; Deng, Tengfei; Zhang, Junchi; Shen, Liangping; He, Pin; Wei, Wei; Wang, Hao

    2016-10-01

    We prepared bilayer HfO2/TiO2 resistive random accessory memory (RRAM) using magnetron sputtering on an ITO/PEN flexible substrate. The switching voltages (V SET and V RESET) were smaller for the Pt/HfO2/TiO2/ITO device than for a Pt/HfO2/ITO memory device. The insertion of a TiO2 layer in the switching layer was inferred to act as an oxygen reservoir to reduce the switching voltages. In addition, greatly improved uniformity was achieved, which showed the coefficient of the variations of V SET and V RESET to be 9.90% and 6.35% for the bilayer structure RRAM. We deduced that occurrence of conductive filament connection/rupture at the interface of the HfO2 and TiO2, in combination with the HfO2 acting as a virtual cathode, led to the improved uniformity. A multilevel storage capability can be obtained by varying the stop voltage in the RESET process for bilayer HfO2/TiO2 RRAM. By analyzing the current conduction mechanism, we demonstrated that the multilevel high resistance state (HRS) was attributable to the increased barrier height when the stop voltage was increased.

  16. Towards Terabit Memories

    NASA Astrophysics Data System (ADS)

    Hoefflinger, Bernd

    Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet

  17. 29. NORTH SIDE OF SOUTH BANK OF HYDRAULIC RAMS, MIDDLE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    29. NORTH SIDE OF SOUTH BANK OF HYDRAULIC RAMS, MIDDLE LEVEL OF STAGE, LOOKING SOUTHEAST. RAMS HAVE BEEN FIXED IN POSITION AT STAGE LEVEL AND NEW MIDDLE LEVEL FLOOR CONSTRUCTED BELOW. - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  18. Space station synergetic RAM-logistics analysis

    NASA Technical Reports Server (NTRS)

    Dejulio, Edmund T.; Leet, Joel H.

    1988-01-01

    NASA's Space Station Maintenance Planning and Analysis (MP&A) Study is a step in the overall Space Station Program to define optimum approaches for on-orbit maintenance planning and logistics support. The approach used in the MP&A study and the analysis process used are presented. Emphasis is on maintenance activities and processes that can be accomplished on orbit within the known design and support constraints of the Space Station. From these analyses, recommendations for maintainability/maintenance requirements are established. The ultimate goal of the study is to reduce on-orbit maintenance requirements to a practical and safe minimum, thereby conserving crew time for productive endeavors. The reliability, availability, and maintainability (RAM) and operations performance evaluation models used were assembled and developed as part of the MP&A study and are described. A representative space station system design is presented to illustrate the analysis process.

  19. Feasibility of Integrated Insulation in Rammed Earth

    NASA Astrophysics Data System (ADS)

    Stone, C.; Balintova, M.; Holub, M.

    2015-11-01

    Building Codes in Europe stipulate strict thermal performance criteria which any traditional rammed earth recipe cannot meet. This does not infer that the material itself is inferior; it has many other face saving attributes such as low embodied energy, high workability, sound insulation, fire resistance, aesthetics, high diffusivity and thermal accumulation properties. Integrated insulation is experimented with, to try achieve a 0.22 [W/(m2.K)] overall coefficient of heat transfer for walls required by 2015 Slovak standards, without using external insulation or using technologically complex interstitial insulation. This has the added aesthetic benefit of leaving the earth wall exposed to the external environment. Results evaluate the feasibility of this traditional approach.

  20. Retracing Memories

    ERIC Educational Resources Information Center

    Harrison, David L.

    2005-01-01

    There are plenty of paths to poetry but few are as accessible as retracing ones own memories. When students are asked to write about something they remember, they are given them the gift of choosing from events that are important enough to recall. They remember because what happened was funny or scary or embarrassing or heartbreaking or silly.…

  1. Flexible and stackable non-volatile resistive memory for high integration

    NASA Astrophysics Data System (ADS)

    Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

    2015-08-01

    We propose a novel flexible and stackable resistive random access memory (ReRAM) array with multi-layered crossbar structures fabricated on a PET flexible substrate through EHD system. The basic memory block of the proposed device is based on one resistor and multi-layered column memristors (1R-MCM) structure, which can be easily extended to 3 dimensional columns for a high integration. To fabricate the device, the materials Ag for top and bottom electrodes, PVP for memristor, and (MEH:PPV and PMMA in acetonitrile) for pull-up resistors are used. Memory single cell is consisted of a high OFF/ON ratio (~4663) memristor and a pull-up resistor (20 MΩ) that operate on the principles of voltage divider circuit. Memory logic data is retrieve in the form of voltage levels instead of sensing current the of crossbar array. Two memory crossbar arrays are stacked vertically and they are sharing column bars, each column's memristors are with a single pull-up resistor. A 3x3 stacked memory with two layers that can store 18 bits of data is demonstrated to realize on a small area for a high integration.

  2. On the robustness of bucket brigade quantum RAM

    NASA Astrophysics Data System (ADS)

    Arunachalam, Srinivasan; Gheorghiu, Vlad; Jochym-O'Connor, Tomas; Mosca, Michele; Varshinee Srinivasan, Priyaa

    2015-12-01

    We study the robustness of the bucket brigade quantum random access memory model introduced by Giovannetti et al (2008 Phys. Rev. Lett.100 160501). Due to a result of Regev and Schiff (ICALP ’08 733), we show that for a class of error models the error rate per gate in the bucket brigade quantum memory has to be of order o({2}-n/2) (where N={2}n is the size of the memory) whenever the memory is used as an oracle for the quantum searching problem. We conjecture that this is the case for any realistic error model that will be encountered in practice, and that for algorithms with super-polynomially many oracle queries the error rate must be super-polynomially small, which further motivates the need for quantum error correction. By contrast, for algorithms such as matrix inversion Harrow et al (2009 Phys. Rev. Lett.103 150502) or quantum machine learning Rebentrost et al (2014 Phys. Rev. Lett.113 130503) that only require a polynomial number of queries, the error rate only needs to be polynomially small and quantum error correction may not be required. We introduce a circuit model for the quantum bucket brigade architecture and argue that quantum error correction for the circuit causes the quantum bucket brigade architecture to lose its primary advantage of a small number of ‘active’ gates, since all components have to be actively error corrected.

  3. Two-bit multi-level phase change random access memory with a triple phase change material stack structure

    NASA Astrophysics Data System (ADS)

    Gyanathan, Ashvini; Yeo, Yee-Chia

    2012-11-01

    This work demonstrates a novel two-bit multi-level device structure comprising three phase change material (PCM) layers, separated by SiN thermal barrier layers. This triple PCM stack consisted of (from bottom to top), Ge2Sb2Te5 (GST), an ultrathin SiN barrier, nitrogen-doped GST, another ultrathin SiN barrier, and Ag0.5In0.5Sb3Te6. The PCM layers can selectively amorphize to form 4 different resistance levels ("00," "01," "10," and "11") using respective voltage pulses. Electrical characterization was extensively performed on these devices. Thermal analysis was also done to understand the physics behind the phase changing characteristics of the two-bit memory devices. The melting and crystallization temperatures of the PCMs play important roles in the power consumption of the multi-level devices. The electrical resistivities and thermal conductivities of the PCMs and the SiN thermal barrier are also crucial factors contributing to the phase changing behaviour of the PCMs in the two-bit multi-level PCRAM device.

  4. Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

    SciTech Connect

    Aga, Fekadu Gochole; Woo, Jiyong; Lee, Sangheon; Song, Jeonghwan; Park, Jaesung; Park, Jaehyuk; Lim, Seokjae; Sung, Changhyuck; Hwang, Hyunsang

    2016-02-15

    We investigate the effect of Cu concentration On-state resistance retention characteristics of W/Cu/Ti/HfO{sub 2}/Pt memory cell. The development of RRAM device for application depends on the understanding of the failure mechanism and the key parameters for device optimization. In this study, we develop analytical expression for cations (Cu{sup +}) diffusion model using Gaussian distribution for detailed analysis of data retention time at high temperature. It is found that the improvement of data retention time depends not only on the conductive filament (CF) size but also on Cu atoms concentration density in the CF. Based on the simulation result, better data retention time is observed for electron wave function associated with Cu{sup +} overlap and an extended state formation. This can be verified by analytical calculation of Cu atom defects inside the filament, based on Cu{sup +} diffusion model. The importance of Cu diffusion for the device reliability and the corresponding local temperature of the filament were analyzed by COMSOL Multiphysics simulation.

  5. Visual input that matches the content of visual working memory requires less (not faster) evidence sampling to reach conscious access.

    PubMed

    Gayet, Surya; van Maanen, Leendert; Heilbron, Micha; Paffen, Chris L E; Van der Stigchel, Stefan

    2016-09-01

    The content of visual working memory (VWM) affects the processing of concurrent visual input. Recently, it has been demonstrated that stimuli are released from interocular suppression faster when they match rather than mismatch a color that is memorized for subsequent recall. In order to investigate the nature of the interaction between visual representations elicited by VWM and visual representations elicited by retinal input, we modeled the perceptual processes leading up to this difference in suppression durations. We replicated the VWM modulation of suppression durations, and fitted sequential sampling models (linear ballistic accumulators) to the response time data. Model comparisons revealed that the data was best explained by a decrease in threshold for visual input that matches the content of VWM. Converging evidence was obtained by fitting similar sequential sampling models (shifted Wald model) to published datasets. Finally, to confirm that the previously observed threshold difference reflected processes occurring before rather than after the stimuli were released from suppression, we applied the same procedure to the data of an experiment in which stimuli were not interocularly suppressed. Here, we found no decrease in threshold for stimuli that match the content of VWM. We discuss our findings in light of a preactivation hypothesis, proposing that matching visual input taps into the same neural substrate that is already activated by a representation concurrently maintained in VWM, thereby reducing its threshold for reaching visual awareness.

  6. Ram-Jet off Design Performances

    NASA Astrophysics Data System (ADS)

    Andriani, Roberto; Ghezzi, Umberto

    2002-01-01

    In this work it is intended to study the off-design performances of a ram jet engine. To this purpouse it has been analyzed in a first time the behaviour of an ideal engine, that means to not consider the losses in the various components, or, under a thermodynamic point of view, to consider the fluid transformation through the air intake and exhaust nozzle, remembering that in a ram jet there are not rotating components as compressor and turbine, isentropic. Referring to the ram-jet scheme of fig.1. we can say, neglecting the fuel introduced, that the air mass flow rate throughout the engine is constant. If we consider the two control sections 4 and 8, respectively the throat section of the converging-diverging supersonic inlet and the throat section of the discharge nozzle, the condition of constant mass flow leads to the relation: m4 =f (M 4 ) m8 = m 4 = m8 We can imaging that the throat section # 4 is always choked for any value of the flight Mach number M0. This means that the throat section 4 is adjusted at any value of M0 so that the flow Mach number in 4 is equal to unity. In this it follows: R. Andriani, U. Ghezzi1 Since in an ideal case T t8 The relation [1] allows to determine the T8 temperature, that represent the maximum cycle temperature, for different operating conditions, as flight Mach number and altitude. We then have two cases: the first is A8 (nozzle throat section) fixed, and the second is A8 variable. In the first case the maximum temperature T8 is univocally determined by the operating condition. In the second case A8 can be varied so to maintain T8 at a chosen value. The graphic of fig.2 shows the first case. In particular it has been considered as design point an altitude of 15000 meters and a flight Mach number equal to 2. In this condition it has been evaluated the section A8 for unity mass flow rate. At the same altitude, varying the flight Mach number, with the section A4 always choked, the graphic shows the variation of the maximum

  7. Access to long-term optical memories using photon echoes retrieved from electron spins in semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Poltavtsev, S. V.; Langer, L.; Yugova, I. A.; Salewski, M.; Kapitonov, Y. V.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2016-10-01

    We use spontaneous (two-pulse) and stimulated (three-pulse) photon echoes for studying the coherent evolution of optically excited ensemble of trions which are localized in semiconductor CdTe/CdMgTe quantum well. Application of transverse magnetic field leads to the Larmor precession of the resident electron spins, which shuffles optically induced polarization between optically accessible and inaccessible states. This results in several spectacular phenomena. First, magnetic field induces oscillations of spontaneous photon echo amplitude. Second, in three-pulse excitation scheme, the photon echo decay is extended by several orders of magnitude. In this study, short-lived optical excitation which is created by the first pulse is coherently transferred into a long-lived electron spin state using the second optical pulse. This coherent spin state of electron ensemble persists much longer than any optical excitation in the system, preserving information on initial optical field, which can be retrieved as a photon echo by means of third optical pulse.

  8. 26. EASTERNMOST HYDRAULIC RAM IN CENTER RANK (STILL OPERABLE), LOWER ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    26. EASTERNMOST HYDRAULIC RAM IN CENTER RANK (STILL OPERABLE), LOWER LEVEL OF STAGE, LOOKING SOUTH. THE CENTER BANK OF RAMS MOVED SMALL SECTIONS OF STAGE IN THE CENTER OF EACH LARGE MOVABLE SECTION. THE WEST EDGE OF THIS SECTION HAS BEEN EXTENDED TO THE WEST EDGE OF THE LARGE SECTION WHICH ORIGINALLY SURROUNDED IT. THE SOUTH RAM FOR THE LARGE SECTION IS VISIBLE IN THE BACKGROUND. THE SMALL MOVABLE SECTIONS COULD NOT TILT BUT COULD BE LOWERED TO THE LOWER LEVEL OF THE STAGE WITH HINGED PANELS UNDER EACH LARGE SECTION FILLING THE VOID. - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  9. STS-9 Shuttle grow - Ram angle effect and absolute intensities

    NASA Technical Reports Server (NTRS)

    Swenson, G. R.; Mende, S. B.; Clifton, K. S.

    1986-01-01

    Visible imagery from Space Shuttle mission STS-9 (Spacelab 1) has been analyzed for the ram angle effect and the absolute intensity of glow. The data are compared with earlier measurements and the anomalous high intensities at large ram angles are confirmed. Absolute intensities of the ram glow on the shuttle tile, at 6563 A, are observed to be about 20 times more intense than those measured on the AE-E spacecraft. Implications of these observations for an existing theory of glow involving NO2 are presented.

  10. 117. Stage mezzanine level floor structure. North rams, facing south. ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    117. Stage mezzanine level floor structure. North rams, facing south. The left hand ram is the same one visible from above in IL-1007-114. A hinged slot in the mezzanine floor corresponding to the slot in the stage floor above is visible in the center of the photo (also visible from below in IL-1007-119). To the right, the top of one of the lowered, smaller, downstage rams (type C) is visible. - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  11. Research and applications modules /RAM/ - A family of payload carriers.

    NASA Technical Reports Server (NTRS)

    Withee, W. W.

    1973-01-01

    RAM is a family of payload carriers, pressurized, unpressurized and pressurizable, that operate in conjunction with the Space Shuttle and associated space systems to provide modular facilities to conduct manned or man-tended research in low earth orbit. RAM family elements are discussed as the next step in evolution from the Sortie Laboratory required to provide a significant increase in experimental capability, flexibility, and economy necessary to meet the needs of an expanding program of research and applications activities. Examples of RAM missions and operations as sortie mission laboratories and observatories, and free-flying man-tended observatories are illustrated.

  12. New River Geothermal Exploration (Ram Power Inc.)

    DOE Data Explorer

    Miller, Clay

    2013-11-15

    The New River Geothermal Exploration (DOE Award No. EE0002843) is located approximately 25km south of the Salton Sea, near town of Brawley in Imperial County and approximately 150km east of San Diego, California. A total of 182 MT Logger sites were completed covering the two separate Mesquite and New River grids. The data was collected over a frequency range of 320Hz to 0.001Hz with variable site spacing. A number of different inversion algorithms in 1D, 2D and 3D were used to produce resistivity-depth profiles and maps of subsurface resistivity variations over the survey area. For 2D inversions, a total of eighteen lines were constructed in east-west and north-south orientations crossing the entire survey area. For MT 3D inversion, the New River property was divided in two sub-grids, Mesquite and New River areas. The report comprises of two parts. For the first part, inversions and geophysical interpretation results are presented with some recommendations of the potential targets for future follow up on the property. The second part of the report describes logistics of the survey, survey parameters, methodology and the survey results (data) in digital documents. The report reviews a Spartan MT survey carried out by Quantec Geoscience Limited over the New River Project in California, USA on behalf of Ram Power Inc. Data was acquired over a period of 29 days from 2010/06/26 to 2010/07/24.

  13. Ram pressure stripping in the Virgo Cluster

    NASA Astrophysics Data System (ADS)

    Verdugo, C.; Combes, F.; Dasyra, K.; Salomé, P.; Braine, J.

    2015-10-01

    Gas can be violently stripped from their galaxy disks in rich clusters, and be dispersed over 100 kpc-scale tails or plumes. Young stars have been observed in these tails, suggesting they are formed in situ. This will contribute to the intracluster light, in addition to tidal stripping of old stars. We want to quantify the efficiency of intracluster star formation. We present CO(1-0) and CO(2-1) observations, made with the IRAM-30 m telescope, towards the ram-pressure stripped tail northeast of NGC 4388 in Virgo. We selected HII regions found all along the tails, together with dust patches, as observing targets. We detect molecular gas in 4 positions along the tail, with masses between 7 × 105 to 2 × 106M⊙. Given the large distance from the NGC 4388 galaxy, the molecular clouds must have formed in situ, from the HI gas plume. We compute the relation between surface densities of star formation and molecular gas in these regions, and find that the star formation has very low efficiency. The corresponding depletion time of the molecular gas can be up to 500 Gyr and more. Since this value exceeds a by far Hubble time, this gas will not be converted into stars, and will stay in a gaseous phase to join the intracluster medium.

  14. [Artificial intelligence meeting neuropsychology. Semantic memory in normal and pathological aging].

    PubMed

    Aimé, Xavier; Charlet, Jean; Maillet, Didier; Belin, Catherine

    2015-03-01

    Artificial intelligence (IA) is the subject of much research, but also many fantasies. It aims to reproduce human intelligence in its learning capacity, knowledge storage and computation. In 2014, the Defense Advanced Research Projects Agency (DARPA) started the restoring active memory (RAM) program that attempt to develop implantable technology to bridge gaps in the injured brain and restore normal memory function to people with memory loss caused by injury or disease. In another IA's field, computational ontologies (a formal and shared conceptualization) try to model knowledge in order to represent a structured and unambiguous meaning of the concepts of a target domain. The aim of these structures is to ensure a consensual understanding of their meaning and a univariant use (the same concept is used by all to categorize the same individuals). The first representations of knowledge in the AI's domain are largely based on model tests of semantic memory. This one, as a component of long-term memory is the memory of words, ideas, concepts. It is the only declarative memory system that resists so remarkably to the effects of age. In contrast, non-specific cognitive changes may decrease the performance of elderly in various events and instead report difficulties of access to semantic representations that affect the semantics stock itself. Some dementias, like semantic dementia and Alzheimer's disease, are linked to alteration of semantic memory. We propose in this paper, using the computational ontologies model, a formal and relatively thin modeling, in the service of neuropsychology: 1) for the practitioner with decision support systems, 2) for the patient as cognitive prosthesis outsourced, and 3) for the researcher to study semantic memory.

  15. Simulation of phase-change random access memory with 35nm diameter of the TiN bottom electrode by finite element modeling

    NASA Astrophysics Data System (ADS)

    Jin, Qiuxue; Liu, Bo; Liu, Yan; Wang, Heng; Xu, Zhen; Gao, Dan; Wang, Qing; Xia, Yangyang; Wang, Weiwei; Song, Zhitang; Feng, Songlin

    2016-10-01

    A three-dimensional finite element model for Phase-Change Random Access Memory (PCRAM) is established to simulate thermal and electrical distribution during RESET operation. The establishment of the model is highly in accordance with the manufacture of PCRAM cell in the 40nm process and the model is applied to simulate the RESET behaviors of 35 nm diameter of titanium nitride (TiN) bottom electrode in the conventional mushroom structure (MS). By the simulations of thermal and electrical distribution, the highest temperature is observed in TiN bottom electrode contactor and meanwhile the voltage of the TiN bottom electrode accounts for as high as 65 percent of the total voltage. It induces high RESET current which suggests that the thermoelectric conductivity of MS is crucial in improving the heating efficiency in RESET process. Simulation results of RESET current and high resistance distribution during RESET operation are close to the data from the actual measurement. However those two values of low resistance are slightly different, probably due to the interface resistance between Ge2Sb2Te5 (GST) and other materials and the resistance caused by microstructural defects. This work reveals the importance of the thermoelectrical properties of materials in PCRAM cells and improves the quality of PCRAM simulations in industrial application.

  16. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  17. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  18. Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure

    NASA Astrophysics Data System (ADS)

    Lo, Chun-Chieh; Hsieh, Tsung-Eong

    2016-09-01

    Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V SET  =  0.61 V V RESET  =  -0.76 V R HRS/R LRS (i.e. the R-ratio)  >103) was observed in the device subject to a post-annealing at 300 °C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 °C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer.

  19. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  20. 30. DETAIL OF TOP OF TYPICAL HYDRAULIC RAM IN SOUTH ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    30. DETAIL OF TOP OF TYPICAL HYDRAULIC RAM IN SOUTH RANK SHOWING ROLLER CONNECTIONS FOR STAGE FLOORS, MIDDLE LEVEL OF STAGE, LOOKING SOUTH. - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  1. RAM simulation model for SPH/RSV systems

    SciTech Connect

    Schryver, J.C.; Primm, A.H.; Nelson, S.C.

    1995-12-31

    The US Army`s Project Manager, Crusader is sponsoring the development of technologies that apply to the Self-Propelled Howitzer (SPH), formerly the Advanced Field Artillery System (AFAS), and Resupply Vehicle (RSV), formerly the Future Armored Resupply Vehicle (FARV), weapon system. Oak Ridge National Laboratory (ORNL) is currently performing developmental work in support of the SPH/PSV Crusader system. Supportive analyses of reliability, availability, and maintainability (RAM) aspects were also performed for the SPH/RSV effort. During FY 1994 and FY 1995 OPNL conducted a feasibility study to demonstrate the application of simulation modeling for RAM analysis of the Crusader system. Following completion of the feasibility study, a full-scale RAM simulation model of the Crusader system was developed for both the SPH and PSV. This report provides documentation for the simulation model as well as instructions in the proper execution and utilization of the model for the conduct of RAM analyses.

  2. DETAIL OF CORNICE MOULDING WITH RAM'S HEAD MOTIF. EIGHT SHADES ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    DETAIL OF CORNICE MOULDING WITH RAM'S HEAD MOTIF. EIGHT SHADES OF GOLD LEAF AND BURNISHED GOLD LEAF WERE USED FOR THE INTERIOR FINISHES. - Anaconda Historic District, Washoe Theater, 305 Main Street, Anaconda, Deer Lodge County, MT

  3. 10. DETAIL OF CORNICE MOULDING WITH RAM'S HEAD MOTIF. EIGHT ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    10. DETAIL OF CORNICE MOULDING WITH RAM'S HEAD MOTIF. EIGHT SHADES OF GOLD LEAF AND BURNISHED GOLD LEAF WERE USED FOR THE INTERIOR FINISHES - Anaconda Historic District, Washoe Theater, 305 Main Street, Anaconda, Deer Lodge County, MT

  4. Efficient checkpointing schemes for depletion perturbation solutions on memory-limited architectures

    SciTech Connect

    Stripling, H. F.; Adams, M. L.; Hawkins, W. D.

    2013-07-01

    We describe a methodology for decreasing the memory footprint and machine I/O load associated with the need to access a forward solution during an adjoint solve. Specifically, we are interested in the depletion perturbation equations, where terms in the adjoint Bateman and transport equations depend on the forward flux solution. Checkpointing is the procedure of storing snapshots of the forward solution to disk and using these snapshots to recompute the parts of the forward solution that are necessary for the adjoint solve. For large problems, however, the storage cost of just a few copies of an angular flux vector can exceed the available RAM on the host machine. We propose a methodology that does not checkpoint the angular flux vector; instead, we write and store converged source moments, which are typically of a much lower dimension than the angular flux solution. This reduces the memory footprint and I/O load of the problem, but requires that we perform single sweeps to reconstruct flux vectors on demand. We argue that this trade-off is exactly the kind of algorithm that will scale on advanced, memory-limited architectures. We analyze the cost, in terms of FLOPS and memory footprint, of five checkpointing schemes. We also provide computational results that support the analysis and show that the memory-for-work trade off does improve time to solution. (authors)

  5. SEU hardening of CMOS memory circuit

    NASA Technical Reports Server (NTRS)

    Whitaker, S.; Canaris, J.; Liu, K.

    1990-01-01

    This paper reports a design technique to harden CMOS memory circuits against Single Event Upset (SEU) in the space environment. A RAM cell and Flip Flop design are presented to demonstrate the method. The Flip Flop was used in the control circuitry for a Reed Solomon encoder designed for the Space Station.

  6. 33 CFR 147.811 - Ram-Powell Tension Leg Platform safety zone.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Ram-Powell Tension Leg Platform... SECURITY (CONTINUED) OUTER CONTINENTAL SHELF ACTIVITIES SAFETY ZONES § 147.811 Ram-Powell Tension Leg Platform safety zone. (a) Description. The Ram-Powell Tension Leg Platform (Ram-Powell TLP) is located...

  7. 33 CFR 147.811 - Ram-Powell Tension Leg Platform safety zone.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Ram-Powell Tension Leg Platform... SECURITY (CONTINUED) OUTER CONTINENTAL SHELF ACTIVITIES SAFETY ZONES § 147.811 Ram-Powell Tension Leg Platform safety zone. (a) Description. The Ram-Powell Tension Leg Platform (Ram-Powell TLP) is located...

  8. 33 CFR 147.811 - Ram-Powell Tension Leg Platform safety zone.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Ram-Powell Tension Leg Platform... SECURITY (CONTINUED) OUTER CONTINENTAL SHELF ACTIVITIES SAFETY ZONES § 147.811 Ram-Powell Tension Leg Platform safety zone. (a) Description. The Ram-Powell Tension Leg Platform (Ram-Powell TLP) is located...

  9. 33 CFR 147.811 - Ram-Powell Tension Leg Platform safety zone.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Ram-Powell Tension Leg Platform... SECURITY (CONTINUED) OUTER CONTINENTAL SHELF ACTIVITIES SAFETY ZONES § 147.811 Ram-Powell Tension Leg Platform safety zone. (a) Description. The Ram-Powell Tension Leg Platform (Ram-Powell TLP) is located...

  10. 33 CFR 147.811 - Ram-Powell Tension Leg Platform safety zone.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Ram-Powell Tension Leg Platform... SECURITY (CONTINUED) OUTER CONTINENTAL SHELF ACTIVITIES SAFETY ZONES § 147.811 Ram-Powell Tension Leg Platform safety zone. (a) Description. The Ram-Powell Tension Leg Platform (Ram-Powell TLP) is located...

  11. Why the Survivability Onion Should Include Reliability, Availability and Maintainability (RAM)

    DTIC Science & Technology

    2013-09-01

    NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA JOINT APPLIED PROJECT WHY THE SURVIVABILITY ONION SHOULD INCLUDE RELIABILITY...SURVIVABILITY ONION SHOULD INCLUDE RELIABILITY, AVAILABILITY, AND MAINTAINABILITY (RAM): THE INTERRELATIONSHIP BETWEEN SURVIVABILITY AND RAM 5. FUNDING...This analysis uses an Active Protection System (APS) to show that, when RAM is included in the Survivability Onion ; both Survivability and RAM

  12. Vehicle barrier with access delay

    DOEpatents

    Swahlan, David J; Wilke, Jason

    2013-09-03

    An access delay vehicle barrier for stopping unauthorized entry into secure areas by a vehicle ramming attack includes access delay features for preventing and/or delaying an adversary from defeating or compromising the barrier. A horizontally deployed barrier member can include an exterior steel casing, an interior steel reinforcing member and access delay members disposed within the casing and between the casing and the interior reinforcing member. Access delay members can include wooden structural lumber, concrete and/or polymeric members that in combination with the exterior casing and interior reinforcing member act cooperatively to impair an adversarial attach by thermal, mechanical and/or explosive tools.

  13. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    NASA Astrophysics Data System (ADS)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  14. Distributed multiport memory architecture

    NASA Technical Reports Server (NTRS)

    Kohl, W. H. (Inventor)

    1983-01-01

    A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

  15. Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.

    PubMed

    Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M

    2017-01-25

    In this study, an O2 inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in resistive random access memory (RRAM). After the O2 plasma treatment, the previously conductive ITO film is oxidized and becomes less conductive. In addition, after capping the same ITO material for use as a top electrode, we found that the ITO/ITO(O2 plasma)/TiN device exhibits very stable and robust resistive switching characteristics. On the contrary, the nontreated ITO film for use as an insulator in the ITO/ITO/TiN device cannot perform resistance switching behaviors. The material analysis initially investigated the ITO film characteristics with and without O2 plasma treatment. The surface was less rough after O2 plasma treatment. However, the molar concentration of each element and measured sheet resistance results for the O2-plasma-treated ITO film were dramatically modified. Next, electrical measurements were carried out to examine the resistance switching stability under continuous DC and AC operation in this ITO/ITO(O2 plasma)/TiN device. Reliability tests, including endurance and retention, also proved its capability for use in data storage applications. In addition to these electrical measurements, current fitting method experiments at different temperatures were performed to examine and confirm the resistance switching mechanisms. This easily fabricated device, using a simple material combination, achieves excellent performance by using ITO with an O2 plasma treatment and can further the abilities of RRAM for use in remarkable potential applications.

  16. Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

    SciTech Connect

    Chavent, A.; Ducruet, C.; Portemont, C.; Creuzet, C.; Alvarez-Hérault, J.; Vila, L.; Sousa, R. C.; Prejbeanu, I. L.; Dieny, B.

    2015-09-14

    This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer.

  17. Improved Writing-Conductor Designs For Magnetic Memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1994-01-01

    Writing currents reduced to practical levels. Improved conceptual designs for writing conductors in micromagnet/Hall-effect random-access integrated-circuit memory reduces electrical current needed to magnetize micromagnet in each memory cell. Basic concept of micromagnet/Hall-effect random-access memory presented in "Magnetic Analog Random-Access Memory" (NPO-17999).

  18. Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

    PubMed

    Liu, Qi; Long, Shibing; Lv, Hangbing; Wang, Wei; Niu, Jiebin; Huo, Zongliang; Chen, Junning; Liu, Ming

    2010-10-26

    Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog circuits, and neuromorphic applications. The underlying resistive switching (RS) mechanism of ReRAM is suggested to be the formation and rupture of nanoscale conductive filament (CF) inside the solid-electrolyte layer. However, the random nature of the nucleation and growth of the CF makes their formation difficult to control, which is a major obstacle for ReRAM performance improvement. Here, we report a novel approach to resolve this challenge by adopting a metal nanocrystal (NC) covered bottom electrode (BE) to replace the conventional ReRAM BE. As a demonstration vehicle, a Ag/ZrO(2)/Cu NC/Pt structure is prepared and the Cu NC covered Pt BE can control CF nucleation and growth to provide superior uniformity of RS properties. The controllable growth of nanoscale CF bridges between Cu NC and Ag top electrode has been vividly observed by transmission electron microscopy (TEM). On the basis of energy-dispersive X-ray spectroscopy (EDS) and elemental mapping analyses, we further confirm that the chemical contents of the CF are mainly Ag atoms. These testing/metrology results are consistent with the simulation results of electric-field distribution, showing that the electric field will enhance and concentrate on the NC sites and control location and orientation of Ag CFs.

  19. Memory beyond expression.

    PubMed

    Delorenzi, A; Maza, F J; Suárez, L D; Barreiro, K; Molina, V A; Stehberg, J

    2014-01-01

    The idea that memories are not invariable after the consolidation process has led to new perspectives about several mnemonic processes. In this framework, we review our studies on the modulation of memory expression during reconsolidation. We propose that during both memory consolidation and reconsolidation, neuromodulators can determine the probability of the memory trace to guide behavior, i.e. they can either increase or decrease its behavioral expressibility without affecting the potential of persistent memories to be activated and become labile. Our hypothesis is based on the findings that positive modulation of memory expression during reconsolidation occurs even if memories are behaviorally unexpressed. This review discusses the original approach taken in the studies of the crab Neohelice (Chasmagnathus) granulata, which was then successfully applied to test the hypothesis in rodent fear memory. Data presented offers a new way of thinking about both weak trainings and experimental amnesia: memory retrieval can be dissociated from memory expression. Furthermore, the strategy presented here allowed us to show in human declarative memory that the periods in which long-term memory can be activated and become labile during reconsolidation exceeds the periods in which that memory is expressed, providing direct evidence that conscious access to memory is not needed for reconsolidation. Specific controls based on the constraints of reminders to trigger reconsolidation allow us to distinguish between obliterated and unexpressed but activated long-term memories after amnesic treatments, weak trainings and forgetting. In the hypothesis discussed, memory expressibility--the outcome of experience-dependent changes in the potential to behave--is considered as a flexible and modulable attribute of long-term memories. Expression seems to be just one of the possible fates of re-activated memories.

  20. Modeling rammed earth wall using discrete element method

    NASA Astrophysics Data System (ADS)

    Bui, T.-T.; Bui, Q.-B.; Limam, A.; Morel, J.-C.

    2016-03-01

    Rammed earth is attracting renewed interest throughout the world thanks to its "green" characteristics in the context of sustainable development. Several research studies have thus recently been carried out to investigate this material. Some of them attempted to simulate the rammed earth's mechanical behavior by using analytical or numerical models. Most of these studies assumed that there was a perfect cohesion at the interface between earthen layers. This hypothesis proved to be acceptable for the case of vertical loading, but it could be questionable for horizontal loading. To address this problem, discrete element modeling seems to be relevant to simulate a rammed earth wall. To our knowledge, no research has been conducted thus far using discrete element modeling to study a rammed earth wall. This paper presents an assessment of the discrete element modeling's robustness for rammed earth walls. Firstly, a brief description of the discrete element modeling is presented. Then the parameters necessary for discrete element modeling of the material law of the earthen layers and their interfaces law following the Mohr-Coulomb model with a tension cut-off and post-peak softening were given. The relevance of the model and the material parameters were assessed by comparing them with experimental results from the literature. The results showed that, in the case of vertical loading, interfaces did not have an important effect. In the case of diagonal loading, model with interfaces produced better results. Interface characteristics can vary from 85 to 100% of the corresponding earthen layer's characteristics.

  1. Operational advances in ring current modeling using RAM-SCB

    SciTech Connect

    Welling, Daniel T; Jordanova, Vania K; Zaharia, Sorin G; Morley, Steven K

    2010-12-03

    The Ring current Atmosphere interaction Model with Self-Consistently calculated 3D Magnetic field (RAM-SCB) combines a kinetic model of the ring current with a force-balanced model of the magnetospheric magnetic field to create an inner magnetospheric model that is magnetically self consistent. RAM-SCB produces a wealth of outputs that are valuable to space weather applications. For example, the anisotropic particle distribution of the KeV-energy population calculated by the code is key for predicting surface charging on spacecraft. Furthermore, radiation belt codes stand to benefit substantially from RAM-SCB calculated magnetic field values and plasma wave growth rates - both important for determining the evolution of relativistic electron populations. RAM-SCB is undergoing development to bring these benefits to the space weather community. Data-model validation efforts are underway to assess the performance of the system. 'Virtual Satellite' capability has been added to yield satellite-specific particle distribution and magnetic field output. The code's outer boundary is being expanded to 10 Earth Radii to encompass previously neglected geosynchronous orbits and allow the code to be driven completely by either empirical or first-principles based inputs. These advances are culminating towards a new, real-time version of the code, rtRAM-SCB, that can monitor the inner magnetosphere conditions on both a global and spacecraft-specific level. This paper summarizes these new features as well as the benefits they provide the space weather community.

  2. Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

    PubMed Central

    2012-01-01

    Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 nm in diameter of the IrOx nano-dots (NDs) have been observed by high-resolution transmission electron microscopy. The IrOx-NDs, Al2O3, and WOx layers are confirmed by X-ray photo-electron spectroscopy. Capacitance-voltage hysteresis characteristics show higher charge-trapping density in the IrOx-ND memory as compared to the pure Al2O3 devices. This suggests that the IrOx-ND device has more defect sites than that of the pure Al2O3 devices. Stable resistive switching characteristics under positive formation polarity on the IrOx electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al2O3/IrOx top electrode interface. The switching mechanism is explained schematically based on our resistive switching parameters. The resistive switching random access memory (ReRAM) devices under positive formation polarity have an applicable resistance ratio of > 10 after extrapolation of 10 years data retention at 85°C and a long read endurance of 105 cycles. A large memory size of > 60 Tbit/sq in. can be realized in future for ReRAM device application. This study is not only important for improving the resistive switching memory performance but also help design other nanoscale high-density nonvolatile memory in future. PMID:22439604

  3. Effects of self-relevant cues and cue valence on autobiographical memory specificity in dysphoria.

    PubMed

    Matsumoto, Noboru; Mochizuki, Satoshi

    2017-04-01

    Reduced autobiographical memory specificity (rAMS) is a characteristic memory bias observed in depression. To corroborate the capture hypothesis in the CaRFAX (capture and rumination, functional avoidance, executive capacity and control) model, we investigated the effects of self-relevant cues and cue valence on rAMS using an adapted Autobiographical Memory Test conducted with a nonclinical population. Hierarchical linear modelling indicated that the main effects of depression and self-relevant cues elicited rAMS. Moreover, the three-way interaction among valence, self-relevance, and depression scores was significant. A simple slope test revealed that dysphoric participants experienced rAMS in response to highly self-relevant positive cues and low self-relevant negative cues. These results partially supported the capture hypothesis in nonclinical dysphoria. It is important to consider cue valence in future studies examining the capture hypothesis.

  4. Application of RAM to Facility/Laboratory Design

    SciTech Connect

    Mohammadi, K

    2008-04-14

    Reliability, Availability, and Maintainability (RAM) studies are extensively used for mission critical systems (e.g., weapons systems) to predict the RAM parameters at the preliminary design phase. A RAM methodology is presented for predicting facility/laboratory inherent availability (i.e., availability that only considers the steady-state effects of design) at the preliminary design phase in support of Department of Energy (DOE) Order 430.1A (Life Cycle Asset Management) and DOE Order 420.1B (Facility Safety). The methodology presented identifies the appropriate system-level reliability and maintainability metrics and discusses how these metrics are used in a fault tree analysis for predicting the facility/laboratory inherent availability. The inherent availability predicted is compared against design criteria to determine if changes to the facility/laboratory preliminary design are necessary to meet the required availability objective in the final design.

  5. Computational Study of Flow Establishment in a Ram Accelerator

    NASA Technical Reports Server (NTRS)

    Yungster, S.; Radhakrishnan, K.; Rabinowitz, M. J.

    1995-01-01

    The temporal evolution of the combustion process established during projectile transition from the launch tube into the ram accelerator section containing an explosive hydrogen-oxygen-argon gas mixture is studied. The Navier-Stokes equations for chemically reacting flow are solved in a fully coupled manner, using an implicit, time accurate algorithm. The solution procedure is based on a spatially second order total variation diminishing scheme and a temporally second order, variable-step, backward differentiation formula method. The hydrogen-oxygen chemistry is modeled with a 9-species, 19-step mechanism. The accuracy of the solution method is first demonstrated by several benchmark calculations. Numerical simulations of two ram accelerator configurations are then presented. In particular, the temporal developments of shock-induced combustion and thrust forces are followed. Positive thrust is established in both cases; however, in one of the ram accelerator configurations studied, combustion in the boundary layer enhances its separation, ultimately resulting in unstart.

  6. Ram pressure induced star formation in Abell 3266

    NASA Astrophysics Data System (ADS)

    Bonsall, Brittany

    An X-ray observation of the merging galaxy cluster Abell 3266 was obtained via the ROSAT PSPC. This information, along with spectroscopic data from the WIde-field Nearby Galaxy-clusters Survey (i.e. WINGS), were used to investigate whether ram pressure is a mechanism that influences star formation. Galaxies exhibiting ongoing star formation are identified by the presence of strong Balmer lines (Hbeta), known to correspond to early type stars. Older galaxies where a rapid increase in star formation has recently ceased, known as E+A galaxies, are identified by strong Hbeta absorption coupled with little to no [OII] emission. The correlation between recent star formation and "high" ram pressure, as defined by Kapferer et al. (2009) as ≥ 5 x 10-11 dyn cm-2, was tested and lead to a contradiction of the previously held belief that ram pressure influences star formation on the global cluster scale.

  7. Wrap spring clutch syringe ram and frit mixer

    DOEpatents

    Simpson, Frank B.

    2006-07-25

    A wrap spring clutch syringe ram pushes at least one syringe with virtually instantaneous starting and stopping, and with constant motion at a defined velocity during the intervening push. The wrap spring clutch syringe ram includes an electric motor, a computer, a flywheel, a wrap spring clutch, a precision lead screw, a slide platform, and syringe reservoirs, a mixing chamber, and a reaction incubation tube. The electric motor drives a flywheel and the wrap spring clutch couples the precision lead screw to the flywheel when a computer enables a solenoid of the wrap spring clutch. The precision lead screw drives a precision slide which causes syringes to supply a portion of solution into the mixing chamber and the incubation tube. The wrap spring clutch syringe ram is designed to enable the quantitative study of solution phase chemical and biochemical reactions, particularly those reactions that occur on the subsecond time scale.

  8. Data requirements for verification of ram glow chemistry

    NASA Technical Reports Server (NTRS)

    Swenson, G. R.; Mende, S. B.

    1985-01-01

    A set of questions is posed regarding the surface chemistry producing the ram glow on the space shuttle. The questions surround verification of the chemical cycle involved in the physical processes leading to the glow. The questions, and a matrix of measurements required for most answers, are presented. The measurements include knowledge of the flux composition to and from a ram surface as well as spectroscopic signatures from the U to visible to IR. A pallet set of experiments proposed to accomplish the measurements is discussed. An interim experiment involving an available infrared instrument to be operated from the shuttle Orbiter cabin is also be discussed.

  9. Lack of evidence of Brucella ovis infection in rams in Quebec.

    PubMed

    Arsenault, Julie; Girard, Christiane; Dubreuil, Pascal; Bélanger, Denise

    2004-04-01

    A study was conducted to estimate the seroprevalence of Brucella ovis infection in rams in the Estrie and Bas-Saint-Laurent regions (Quebec). Rams sera (n = 258) were serologically evaluated from 224 rams in 30 commercial flocks and from 34 rams at 2 slaughterhouses by using an enzyme linked immunosorbent assay. Epididymides and testes were examined by palpation on farms and microscopically for culled rams. No ram was seropositive to Brucella ovis or had lesions suggestive of brucellosis from the farm or slaughterhouse surveys.

  10. Nonvolatile Memory Technology for Space Applications

    NASA Technical Reports Server (NTRS)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  11. Efficient Hessian computation using sparse matrix derivatives in RAM notation.

    PubMed

    von Oertzen, Timo; Brick, Timothy R

    2014-06-01

    This article proposes a new, more efficient method to compute the minus two log likelihood, its gradient, and the Hessian for structural equation models (SEMs) in reticular action model (RAM) notation. The method exploits the beneficial aspect of RAM notation that the matrix derivatives used in RAM are sparse. For an SEM with K variables, P parameters, and P' entries in the symmetrical or asymmetrical matrix of the RAM notation filled with parameters, the asymptotical run time of the algorithm is O(P ' K (2) + P (2) K (2) + K (3)). The naive implementation and numerical implementations are both O(P (2) K (3)), so that for typical applications of SEM, the proposed algorithm is asymptotically K times faster than the best previously known algorithm. A simulation comparison with a numerical algorithm shows that the asymptotical efficiency is transferred to an applied computational advantage that is crucial for the application of maximum likelihood estimation, even in small, but especially in moderate or large, SEMs.

  12. Initiation of combustion in the thermally choked ram accelerator

    NASA Technical Reports Server (NTRS)

    Bruckner, A. P.; Burnham, E. A.; Knowlen, C.; Hertzberg, A.; Bogdanoff, D. W.

    1992-01-01

    The methodology for initiating stable combustion in a ram accelerator operating in the thermally choked mode is presented in this paper. The ram accelerator is a high velocity ramjet-in-tube projectile launcher whose principle of operation is similar to that of an airbreathing ramjet. The subcaliber projectile travels supersonically through a stationary tube filled with a premixed combustible gas mixture. In the thermally choked propulsion mode subsonic combustion takes place behind the base of the projectile and leads to thermal choking, which stabilizes a normal shock system on the projectile, thus producing forward thrust. Projectiles with masses in the 45-90 g range have been accelerated to velocities up to 2650 m/sec in a 38 mm bore, 16 m long accelerator tube. Operation of the ram accelerator is started by injecting the projectile into the accelerator tube at velocities in the 700 - 1300 m/sec range by means of a conventional gas gun. A specially designed obturator, which seals the bore of the gun during this initial acceleration, enters the ram accelerator together with the projectile. The interaction of the obturator with the propellant gas ignites the gas mixture and establishes stable combustion behind the projectile.

  13. RAMS approach for reusable launch vehicle advanced studies

    NASA Astrophysics Data System (ADS)

    Tatry, PH.; Deneu, F.; Simonotti, J. L.

    The emerging of reusable single stage to orbit concept as credible launchers in the turn of the century is changing some technical and technological approaches in the way of doing future launcher advanced studies. Among others (such as operations through the "aircraft-like operations" concept), the RAMS approach (reliability, availability, maintainability and safety) has to be implemented from the very beginning of a concept study, especially for the SSTOs ones in order to meet the "able" requirements (affordable, reusable, reliable, available and operable). Beyond the "traditional" considerations applied to expendable launchers and/or man rated space transportation systems, the RAMS involvement in reusable launcher advanced studies and concept trade-offs must allow to perform the best balance between costs, performance and related risks. For instance, in the framework of SSTOs key technologies identification studies performed at Aerospatiale, the RAMS have been involved from the beginning of the preliminary design task. This approach has shown that the assessment of the main propulsion failure risks and associated probabilities of occurrence have strongly affected the vehicle design within the mission management and technical aspects such as main propulsion specifications, ascent trajectory shaping and landing phase scenario (VTOVL configuration). This paper intends to describe this RAMS approach and addresses how it has been applied on trade-off on VTOVL concept.

  14. 17. Detail of base of 'Flying Ram' in NW corner ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    17. Detail of base of 'Flying Ram' in NW corner of foyer. Camera is looking SW. First doorway beyond fountain leads to basement and men's lounge seen in WA-197-44. Second doorway leads to storefront corner at Seventh Ave. and Olive Way. (Aug. 1991) - Fox Theater, Seventh Avenue & Olive Way, Seattle, King County, WA

  15. BioRAM Lite v.1.0

    SciTech Connect

    2010-08-05

    BioRAM lite is a training tool for teaching the processes which should be using in assessing biosafety and biosecurity risks. The tool includes 4 separate workbooks – two for biosafety and two for biosecurity. The tools include a set of questions which are scored using ordinal values and the mathematical equations to combine the answers into likelihood and consequence values.

  16. Architecture of the sperm whale forehead facilitates ramming combat.

    PubMed

    Panagiotopoulou, Olga; Spyridis, Panagiotis; Mehari Abraha, Hyab; Carrier, David R; Pataky, Todd C

    2016-01-01

    Herman Melville's novel Moby Dick was inspired by historical instances in which large sperm whales (Physeter macrocephalus L.) sank 19th century whaling ships by ramming them with their foreheads. The immense forehead of sperm whales is possibly the largest, and one of the strangest, anatomical structures in the animal kingdom. It contains two large oil-filled compartments, known as the "spermaceti organ" and "junk," that constitute up to one-quarter of body mass and extend one-third of the total length of the whale. Recognized as playing an important role in echolocation, previous studies have also attributed the complex structural configuration of the spermaceti organ and junk to acoustic sexual selection, acoustic prey debilitation, buoyancy control, and aggressive ramming. Of these additional suggested functions, ramming remains the most controversial, and the potential mechanical roles of the structural components of the spermaceti organ and junk in ramming remain untested. Here we explore the aggressive ramming hypothesis using a novel combination of structural engineering principles and probabilistic simulation to determine if the unique structure of the junk significantly reduces stress in the skull during quasi-static impact. Our analyses indicate that the connective tissue partitions in the junk reduce von Mises stresses across the skull and that the load-redistribution functionality of the former is insensitive to moderate variation in tissue material parameters, the thickness of the partitions, and variations in the location and angle of the applied load. Absence of the connective tissue partitions increases skull stresses, particularly in the rostral aspect of the upper jaw, further hinting of the important role the architecture of the junk may play in ramming events. Our study also found that impact loads on the spermaceti organ generate lower skull stresses than an impact on the junk. Nevertheless, whilst an impact on the spermaceti organ would

  17. Architecture of the sperm whale forehead facilitates ramming combat

    PubMed Central

    Spyridis, Panagiotis; Mehari Abraha, Hyab; Carrier, David R.; Pataky, Todd C.

    2016-01-01

    Herman Melville’s novel Moby Dick was inspired by historical instances in which large sperm whales (Physeter macrocephalus L.) sank 19th century whaling ships by ramming them with their foreheads. The immense forehead of sperm whales is possibly the largest, and one of the strangest, anatomical structures in the animal kingdom. It contains two large oil-filled compartments, known as the “spermaceti organ” and “junk,” that constitute up to one-quarter of body mass and extend one-third of the total length of the whale. Recognized as playing an important role in echolocation, previous studies have also attributed the complex structural configuration of the spermaceti organ and junk to acoustic sexual selection, acoustic prey debilitation, buoyancy control, and aggressive ramming. Of these additional suggested functions, ramming remains the most controversial, and the potential mechanical roles of the structural components of the spermaceti organ and junk in ramming remain untested. Here we explore the aggressive ramming hypothesis using a novel combination of structural engineering principles and probabilistic simulation to determine if the unique structure of the junk significantly reduces stress in the skull during quasi-static impact. Our analyses indicate that the connective tissue partitions in the junk reduce von Mises stresses across the skull and that the load-redistribution functionality of the former is insensitive to moderate variation in tissue material parameters, the thickness of the partitions, and variations in the location and angle of the applied load. Absence of the connective tissue partitions increases skull stresses, particularly in the rostral aspect of the upper jaw, further hinting of the important role the architecture of the junk may play in ramming events. Our study also found that impact loads on the spermaceti organ generate lower skull stresses than an impact on the junk. Nevertheless, whilst an impact on the spermaceti organ

  18. Evidence of melatonin synthesis in the ram reproductive tract.

    PubMed

    Gonzalez-Arto, M; Hamilton, T R dos S; Gallego, M; Gaspar-Torrubia, E; Aguilar, D; Serrano-Blesa, E; Abecia, J A; Pérez-Pé, R; Muiño-Blanco, T; Cebrián-Pérez, J A; Casao, A

    2016-01-01

    Melatonin is a ubiquitous molecule found in a wide range of fluids, one of them being ram seminal plasma, in which it can reach higher concentrations than those found in blood, suggesting an extrapineal secretion by the reproductive tract. In order to identify the source of the melatonin found in ram seminal plasma, we first tried to determine whether the melatonin levels were maintained during the day. For this purpose, melatonin concentrations were measured in seminal plasma obtained from first ejaculates of six rams at 6:00 a.m. in total darkness, at 10:00 a.m. and at 14:00 p.m. The melatonin concentration was higher (p < 0.05) in ejaculates collected at 6:00 a.m. than at 10:00 and 14:00. There was no statistical difference between the latter. To further corroborate an extrapineal secretion of melatonin, the presence of the two key enzymes involved in melatonin synthesis, arylalkylamine-N-acetyltransferase (AANAT) and N-acetylserotonin-O-methyltransferase (ASMT) was analyzed by RT-PCR, q-PCR and Western-blot in ram testes, epididymis, and accessory glands. The RT-PCR showed the presence of the m-RNA codifying both AANAT and ASTM in all the tissues under study, but the q-PCR and Western-blot revealed that gene expression of these enzymes was significantly higher in the testis (p < 0.05). Immunohistochemistry confirmed the presence of AANAT and ASMT in the testis and revealed that they were found in the Leydig cells, spermatocytes, and spermatids. Also, measurable levels of melatonin were found in testicular tissue and the tail of the epididymis. In conclusion, our study indicates that the testes are one of the likely sources of the high levels of melatonin found in ram seminal plasma, at least during the day.

  19. Penicillamine prevents ram sperm agglutination in media that support capacitation.

    PubMed

    Leahy, T; Rickard, J P; Aitken, R J; de Graaf, S P

    2016-02-01

    Ram spermatozoa are difficult to capacitate in vitro. Here we describe a further complication, the unreported phenomenon of head-to-head agglutination of ram spermatozoa following dilution in the capacitation medium Tyrodes plus albumin, lactate and pyruvate (TALP). Sperm agglutination is immediate, specific and persistent and is not associated with a loss of motility. Agglutination impedes in vitro sperm handling and analysis. So the objectives of this study were to investigate the cause of sperm agglutination and potential agents which may reduce agglutination. The percentage of non-agglutinated, motile spermatozoa increased when bicarbonate was omitted from complete TALP suggesting that bicarbonate ions stimulate the agglutination process. d-penicillamine (PEN), a nucleophilic thiol, was highly effective at reducing agglutination. The inclusion of 250 μM PEN in TALP reduced the incidence of motile, agglutinated spermatozoa from 76.7 ± 2.7% to 2.8 ± 1.4%. It was then assessed if PEN (1 mM) could be included in existing ram sperm capacitation protocols (TALP +1 mM dibutyryl cAMP, caffeine and theophylline) to produce spermatozoa that were simultaneously capacitated and non-agglutinated. This protocol resulted in a sperm population which displayed high levels of tyrosine phosphorylated proteins and lipid disordered membranes (merocyanine-540) while remaining motile, viable, acrosome-intact and non-agglutinated. In summary, PEN (1 mM) can be included in ram sperm capacitation protocols to reduce sperm agglutination and allow for the in vitro assessment of ram sperm capacitation.

  20. RAM: a Relativistic Adaptive Mesh Refinement Hydrodynamics Code

    SciTech Connect

    Zhang, Wei-Qun; MacFadyen, Andrew I.; /Princeton, Inst. Advanced Study

    2005-06-06

    The authors have developed a new computer code, RAM, to solve the conservative equations of special relativistic hydrodynamics (SRHD) using adaptive mesh refinement (AMR) on parallel computers. They have implemented a characteristic-wise, finite difference, weighted essentially non-oscillatory (WENO) scheme using the full characteristic decomposition of the SRHD equations to achieve fifth-order accuracy in space. For time integration they use the method of lines with a third-order total variation diminishing (TVD) Runge-Kutta scheme. They have also implemented fourth and fifth order Runge-Kutta time integration schemes for comparison. The implementation of AMR and parallelization is based on the FLASH code. RAM is modular and includes the capability to easily swap hydrodynamics solvers, reconstruction methods and physics modules. In addition to WENO they have implemented a finite volume module with the piecewise parabolic method (PPM) for reconstruction and the modified Marquina approximate Riemann solver to work with TVD Runge-Kutta time integration. They examine the difficulty of accurately simulating shear flows in numerical relativistic hydrodynamics codes. They show that under-resolved simulations of simple test problems with transverse velocity components produce incorrect results and demonstrate the ability of RAM to correctly solve these problems. RAM has been tested in one, two and three dimensions and in Cartesian, cylindrical and spherical coordinates. they have demonstrated fifth-order accuracy for WENO in one and two dimensions and performed detailed comparison with other schemes for which they show significantly lower convergence rates. Extensive testing is presented demonstrating the ability of RAM to address challenging open questions in relativistic astrophysics.

  1. Operation of polycarbonate projectiles in the ram accelerator

    NASA Astrophysics Data System (ADS)

    Elder, Timothy

    The ram accelerator is a hypervelocity launcher with direct space launch applications in which a sub-caliber projectile, analogous to the center-body of a ramjet engine, flies through fuel and oxidizer that have been premixed in a tube. Shock interactions in the tube ignite the propellant upon entrance of the projectile and the combustion travels with it, creating thrust on the projectile by stabilizing a high pressure region of gas behind it. Conventional ram accelerator projectiles consist of aluminum, magnesium, or titanium nosecones and bodies. An experimental program has been undertaken to determine the performance of polycarbonate projectiles in ram accelerator operation. Experimentation using polycarbonate projectiles has been divided into two series: determining the lower limit for starting velocity (i.e., less than 1100 m/s) and investigating the upper velocity limit. To investigate the influence of body length and starting velocity, a newly developed "combustion gun" was used to launch projectiles to their initial velocities. The combustion gun uses 3-6 m of ram accelerator test section as a breech and 4-6 m of the ram accelerator test section as a launch tube. A fuel-oxidizer mix is combusted in the breech using a spark plug or electric match and bursts a diaphragm, accelerating the ram projectile to its entrance velocity. The combustion gun can be operated at modest fill pressures (20 bar) but can only launch to relatively low velocities (approximately 1000 m/s) without destroying the projectile and obturator upon launch. Projectiles were successfully started at entrance velocities as low as 810 m/s and projectile body lengths as long as 91 mm were used. The tests investigating the upper Mach number limits of polycarbonate projectiles used the conventional single-stage light-gas gun because of its ability to reach higher velocities with a lower acceleration launch. It was determined that polycarbonate projectiles have an upper velocity limit in the

  2. Mechanical memory

    DOEpatents

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-08-15

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  3. Mechanical memory

    DOEpatents

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-05-16

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  4. Ram seminal plasma improves pregnancy rates in ewes cervically inseminated with ram semen stored at 5 °C for 24 hours.

    PubMed

    López-Pérez, A; Pérez-Clariget, R

    2012-01-15

    In this study, we compared pregnancy rates obtained using ram semen stored at 5 °C for 24 h, with ram or bull seminal plasma (SP) added to TRIS-egg yolk extender. During the breeding period, 670 adult Corriedale ewes were cervically inseminated with semen (2 × 10(8) sperm in a volume of 0.2 mL) from eight adult Corriedale rams. Ejaculates, obtained using an artificial vagina, were split into three aliquots and diluted with the following: TRIS-egg yolk based extender (T), T + 30% ram SP (R), or T + 30% bull SP (B). Samples were refrigerated and stored at 5 °C for 24 h until used for AI. Pregnancy was assessed by ultrasonography 35 to 40 d after AI. Pregnancy rate was not affected by ram (P = 0.77) or breeding period (P = 0.43), and there were no interactions between extender and ram (P = 0.94), or extender and breeding period (P = 0.24). However, there was an effect of extender (P = 0.0009) on pregnancy rates; ram SP, but not bull SP, increased pregnancy rates compared with extender without SP (49.7, 38.1, and 31.1%, for R, B, and T respectively). In conclusion, ram SP added to TRIS-egg yolk extender had a beneficial effect on the pregnancy rate of ram sperm stored at 5 °C for 24 h and used for cervical insemination of ewes.

  5. Memory Optimization for Phase-field Simulations

    SciTech Connect

    Derek Gaston; John Peterson; Andrew Slaughter; Cody Permann; David Andrs

    2014-08-01

    Phase-field simulations are computationally and memory intensive applications. Many of the phase-field simulations being conducted in support of NEAMS were not capable of running on “normal clusters” with 2-4GB of RAM per core, and instead required specialized “big-memory” clusters with 64GB per core. To address this issue, the MOOSE team developed a new Python-based utility called MemoryLogger, and applied it to locate, diagnose, and eradicate memory bottlenecks within the MOOSE framework. MemoryLogger allows for a better understanding of the memory usage of an application being run in parallel across a cluster. Memory usage information is captured for every individual process in a parallel job, and communicated to the head node of the cluster. Console text output from the application itself is automatically matched with this memory usage information to produce a detailed picture of memory usage over time, making it straightforward to identify the subroutines which contribute most to the application’s peak memory usage. The information produced by the MemoryLogger quickly and effectively narrows the search for memory optimizations to the most data-intensive parts of the simulation.

  6. Applications of the ram accelerator to hypervelocity aerothermodynamic testing

    NASA Technical Reports Server (NTRS)

    Bruckner, A. P.; Knowlen, C.; Hertzberg, A.

    1992-01-01

    A ram accelerator used as a hypervelocity launcher for large-scale aeroballistic range applications in hypersonics and aerodynamics research is presented. It is an in-bore ramjet device in which a projectile shaped like the centerbody of a supersonic ramjet is propelled down a stationary tube filled with a tailored combustible gas mixture. Ram accelerator operation has been demonstrated at 39 mm and 90 mm bores, supporting the proposition that this launcher concept can be scaled up to very large bore diameters of the order of 30-60 cm. It is concluded that high quality data obtained from the tube wall and projectile during the aceleration process itself are very useful for understanding aerothermodynamics of hypersonic flow in general, and for providing important CFD validation benchmarks.

  7. Numerical simulations of the superdetonative ram accelerator combusting flow field

    NASA Technical Reports Server (NTRS)

    Soetrisno, Moeljo; Imlay, Scott T.; Roberts, Donald W.

    1993-01-01

    The effects of projectile canting and fins on the ram accelerator combusting flowfield and the possible cause of the ram accelerator unstart are investigated by performing axisymmetric, two-dimensional, and three-dimensional calculations. Calculations are performed using the INCA code for solving Navier-Stokes equations and a guasi-global combustion model of Westbrook and Dryer (1981, 1984), which includes N2 and nine reacting species (CH4, CO, CO2, H2, H, O2, O, OH, and H2O), which are allowed to undergo a 12-step reaction. It is found that, without canting, interactions between the fins, boundary layers, and combustion fronts are insufficient to unstart the projectile at superdetonative velocities. With canting, the projectile will unstart at flow conditions where it appears to accelerate without canting. Unstart occurs at some critical canting angle. It is also found that three-dimensionality plays an important role in the overall combustion process.

  8. Investigation of starting transients in the thermally choked ram accelerator

    NASA Technical Reports Server (NTRS)

    Burnham, E. A.; Hinkey, J. B.; Bruckner, A. P.

    1992-01-01

    An experimental investigation of the starting transients of the thermally choked ram accelerator is presented in this paper. Construction of a highly instrumented tube section and instrumentation inserts provide high resolution experimental pressure, luminosity, and electromagnetic data of the starting transients. Data obtained prior to and following the entrance diaphragm show detailed development of shock systems in both combustible and inert mixtures. With an evacuated launch tube, starting the diffuser is possible at any Mach number above the Kantrowitz Mach number. The detrimental effects and possible solutions of higher launch tube pressures and excessive obturator leakage (blow-by) are discussed. Ignition of a combustible mixture is demonstrated with both perforated and solid obturators. The relative advantages and disadvantages of each are discussed. Data obtained from these starting experiments enhance the understanding of the ram accelerator, as well as assist in the validation of unsteady, chemically reacting CFD codes.

  9. Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor

    PubMed Central

    Jeon, Ji Hoon; Joo, Ho-Young; Kim, Young-Min; Lee, Duk Hyun; Kim, Jin-Soo; Kim, Yeon Soo; Choi, Taekjib; Park, Bae Ho

    2016-01-01

    Highly nonlinear bistable current-voltage (I–V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I–V characteristics have been achieved by introducing complex device structures consisting of selection elements (selectors) and memory elements which are connected in series. In this study, we report bipolar resistive switching (RS) behaviours of nano-crystalline BiFeO3 (BFO) nano-islands grown on Nb-doped SrTiO3 substrates, with large ON/OFF ratio of 4,420. In addition, the BFO nano-islands exhibit asymmetric I–V characteristics with high nonlinearity factor of 1,100 in a low resistance state. Such selector-free RS behaviours are enabled by the mosaic structures and pinned downward ferroelectric polarization in the BFO nano-islands. The high resistance ratio and nonlinearity factor suggest that our BFO nano-islands can be extended to an N × N array of N = 3,740 corresponding to ~107 bits. Therefore, our BFO nano-island showing both high resistance ratio and nonlinearity factor offers a simple and promising building block of high density ReRAM. PMID:27001415

  10. Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor.

    PubMed

    Jeon, Ji Hoon; Joo, Ho-Young; Kim, Young-Min; Lee, Duk Hyun; Kim, Jin-Soo; Kim, Yeon Soo; Choi, Taekjib; Park, Bae Ho

    2016-03-22

    Highly nonlinear bistable current-voltage (I-V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I-V characteristics have been achieved by introducing complex device structures consisting of selection elements (selectors) and memory elements which are connected in series. In this study, we report bipolar resistive switching (RS) behaviours of nano-crystalline BiFeO3 (BFO) nano-islands grown on Nb-doped SrTiO3 substrates, with large ON/OFF ratio of 4,420. In addition, the BFO nano-islands exhibit asymmetric I-V characteristics with high nonlinearity factor of 1,100 in a low resistance state. Such selector-free RS behaviours are enabled by the mosaic structures and pinned downward ferroelectric polarization in the BFO nano-islands. The high resistance ratio and nonlinearity factor suggest that our BFO nano-islands can be extended to an N × N array of N = 3,740 corresponding to ~10(7) bits. Therefore, our BFO nano-island showing both high resistance ratio and nonlinearity factor offers a simple and promising building block of high density ReRAM.

  11. Selector-free resistive switching memory cell based on BiFeO3 nano-island showing high resistance ratio and nonlinearity factor

    NASA Astrophysics Data System (ADS)

    Jeon, Ji Hoon; Joo, Ho-Young; Kim, Young-Min; Lee, Duk Hyun; Kim, Jin-Soo; Kim, Yeon Soo; Choi, Taekjib; Park, Bae Ho

    2016-03-01

    Highly nonlinear bistable current-voltage (I–V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I–V characteristics have been achieved by introducing complex device structures consisting of selection elements (selectors) and memory elements which are connected in series. In this study, we report bipolar resistive switching (RS) behaviours of nano-crystalline BiFeO3 (BFO) nano-islands grown on Nb-doped SrTiO3 substrates, with large ON/OFF ratio of 4,420. In addition, the BFO nano-islands exhibit asymmetric I–V characteristics with high nonlinearity factor of 1,100 in a low resistance state. Such selector-free RS behaviours are enabled by the mosaic structures and pinned downward ferroelectric polarization in the BFO nano-islands. The high resistance ratio and nonlinearity factor suggest that our BFO nano-islands can be extended to an N × N array of N = 3,740 corresponding to ~107 bits. Therefore, our BFO nano-island showing both high resistance ratio and nonlinearity factor offers a simple and promising building block of high density ReRAM.

  12. The effect of cushion-ram pulsation on hot stamping

    NASA Astrophysics Data System (ADS)

    Landgrebe, Dirk; Rautenstrauch, Anja; Kunke, Andreas; Polster, Stefan; Kriechenbauer, Sebastian; Mauermann, Reinhard

    2016-10-01

    Hot stamping is an important technology for manufacturing high-strength components. This technology offers the possibility to achieve significant weight reductions. In this study, cushion-ram pulsation (CRP), a new technology for hot stamping on servo-screw presses, was investigated and applied for hot stamping. Compared to a conventional process, the tests yielded a significantly higher drawing depth. In this paper, the CRP technology and the first test results with hot stamping were described in comparison to the conventional process.

  13. 120. Stage basement. View of the downstage, right, hydraulic ram ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    120. Stage basement. View of the downstage, right, hydraulic ram (type B) "star lift" and trap mechanism. The trap is in the retracted (open) position, but the opening in the stage floor was covered after the lift was taken out of service (see also sheet 8 of 9, details 5, 6A and 6B). - Auditorium Building, 430 South Michigan Avenue, Chicago, Cook County, IL

  14. Research Needs to Reduce Maritime Collisions, Rammings, and Groundings.

    DTIC Science & Technology

    1981-05-01

    S .. -A CHAPTER VI: COLLECTION AND EXCHANGE OF INFORMATION 52 Models of Information-Exchange Systems Needs in the Maritime Industry CHAPTER VII...Relations FIGURE 2 Facets of a systems approach to mritin-e casualties. 31 -, 1> MINT a ~ II -b -* -* I TTTIT V < S .T . IT B . - III - MYTNI I NI ’p I I...PREPARED BY: IMTRB COMMITTEE ON MARITIME COLLISIONS, RAMMINGS, AND GROUNDINGS DETNTO POIIN EVALUTE -]3-3HAZ RD "-- " . .. .. ... S *.....I..... .,,VEi

  15. The Alcoa ram fastener: A reusable blind rivet

    NASA Technical Reports Server (NTRS)

    Dewalt, W. J.

    1972-01-01

    Results of tensile, shear, fatigue and accelerated weathering tests are presented for the ram fastener, a reusable, single unit blind rivet. The effects of variations in hole size, grip length and sheet thickness on strength properties of the fastener were determined. The test results show these fasteners to have strength characteristics suitable for light structural applications. Exposure to accelerated weathering did not impair their performance.

  16. Simulating Single-Event Upsets in Bipolar RAM's

    NASA Technical Reports Server (NTRS)

    Zoutendyk, J. A.

    1986-01-01

    Simulation technique saves testing. Uses interactive version of SPICE (Simulation Program with Integrated Circuit Emphasis). Device and subcircuit models available in software used to construct macromodel for an integrated bipolar transistor. Time-dependent current generators placed inside transistor macromodel to simulate charge collection from ion track. Significant finding of experiments is standard design practice of reducing power in unaddressed bipolar RAM cell increases sensitivity of cell to single-event upsets.

  17. A 4-Kbit Four-Transistor Dynamic Ram

    DTIC Science & Technology

    1983-06-23

    Low-speed testing of the RAM test chips was done using a 68000-based single - board computer . C programs were used to read and write the chip pins through...testing, high-speed testing, and on-chip test logic. 12 6.3.1. Test Programs Our low-speed tester is a 68000-based single - board computer with parallel I/0

  18. Investigation of Reactive Gasdynamics Phenomena in the Ram Accelerator

    DTIC Science & Technology

    2007-11-02

    Mach number depends on propellant energetics were the topics of this particular study. Propellant mixtures with less heat release than the optimum...Velocity Regime An investigation of superdetonative propulsive cycles was performed. Experiments with projectiles fabricated from aluminum and titanium ...pressures of 21~kPa or less , successful starting of the ram accelerator was possible at a fill pressure of 50 atm. High Acceleration Experiments Using

  19. Tracing ram-pressure stripping with warm molecular hydrogen emission

    SciTech Connect

    Sivanandam, Suresh; Rieke, Marcia J.; Rieke, George H.

    2014-12-01

    We use the Spitzer Infrared Spectrograph to study four infalling cluster galaxies with signatures of ongoing ram-pressure stripping. H{sub 2} emission is detected in all four, and two show extraplanar H{sub 2} emission. The emission usually has a warm (T ∼ 115-160 K) and a hot (T ∼ 400-600 K) component that is approximately two orders of magnitude less massive than the warm one. The warm component column densities are typically 10{sup 19} to 10{sup 20} cm{sup –2} with masses of 10{sup 6} to 10{sup 8} M {sub ☉}. The warm H{sub 2} is anomalously bright compared with normal star-forming galaxies and therefore may be excited by ram-pressure. In the case of CGCG 97-073, the H{sub 2} is offset from the majority of star formation along the direction of the galaxy's motion in the cluster, suggesting that it is forming in the ram-pressure wake of the galaxy. Another galaxy, NGC 4522, exhibits a warm H{sub 2} tail approximately 4 kpc in length. These results support the hypothesis that H{sub 2} within these galaxies is shock-heated from the interaction with the intracluster medium. Stripping of dust is also a common feature of the galaxies. For NGC 4522, where the distribution of dust at 8 μm is well resolved, knots and ripples demonstrate the turbulent nature of the stripping process. The Hα and 24 μm luminosities show that most of the galaxies have star-formation rates comparable to similar mass counterparts in the field. Finally, we suggest a possible evolutionary sequence primarily related to the strength of ram-pressure that a galaxy experiences to explain the varied results observed in our sample.

  20. 86. Photocopied August 1978. CLAY RAMMING EQUIPMENT IN OPERATION IN ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    86. Photocopied August 1978. CLAY RAMMING EQUIPMENT IN OPERATION IN THE POWER HOUSE IN 1910. A PILE OF CLAY USED TO FILL THE WASHED-OUT AREAS BENEATH THE FOUNDATIONS IS SHOWN IN THE CENTER OF THE ILLUSTRATION BESIDE THE FILLER PIPE. THE WEIGHT USED TO FORCE THE CLAY DOWN UNDER THE FOUNDATIONS IS SHOWN PRESSING ON THE PLUNGER PIPE. (542) - Michigan Lake Superior Power Company, Portage Street, Sault Ste. Marie, Chippewa County, MI

  1. Ram accelerator direct space launch system - New concepts

    NASA Technical Reports Server (NTRS)

    Bogdanoff, David W.

    1992-01-01

    The ram accelerator, a chemically driven ramjet-in-tube device is a new option for direct launch of acceleration-insensitive payloads into earth orbit. The projectile is the centerbody of a ramjet and travels through a tube filled with a premixed fuel-oxidizer mixture. The tube acts as the cowl of the ramjet. A number of new concepts for a ram accelerator space launch system are presented. The velocity and acceleration capabilities of a number of ram accelerator drive modes, including several new modes, are given. Passive (fin) stabilization during atmospheric transit is investigated and found to be promising. Gasdynamic heating in-tube and during atmospheric transit is studied; the former is found to be severe, but may be alleviated by the selection of the most suitable drive modes, transpiration cooling, or a hydrogen gas core in the launch tube. To place the payload in earth orbit, scenarios using one impulse and three impulses (with an aeropass) and a new scenario involving an auxiliary vehicle are studied. The auxiliary vehicle scenario is found to be competitive regarding payload, and requires a much simpler projectile, but has the disadvantage of requiring the auxiliary vehicle.

  2. High spatial resolution measurements in a single stage ram accelerator

    NASA Technical Reports Server (NTRS)

    Hinkey, J. B.; Burnham, E. A.; Bruckner, A. P.

    1992-01-01

    High spatial resolution experimental tube wall pressure measurements of ram accelerator gas dynamic phenomena are presented in this paper. The ram accelerator is a ramjet-in-tube device which operates in a manner similar to that of a conventional ramjet. The projectile resembles the centerbody of a ramjet and travels supersonically through a tube filled with a combustible gaseous mixture, with the tube acting as the outer cowling. Pressure data are recorded as the projectile passes by sensors mounted in the tube wall at various locations along the tube. Utilization of special highly instrumented sections of tube has allowed the recording of gas dynamic phenomena with high resolution. High spatial resolution tube wall pressure data from the three regimes of propulsion studied to date (subdetonative, transdetonative, and superdetonative) in a single stage gas mixture are presented and reveal the three-dimensional character of the flow field induced by projectile fins and the canting of the fins and the canting of the projectile body relative to the tube wall. Also presented for comparison to the experimental data are calculations made with an inviscid, three-dimensional CFD code. The knowledge gained from these experiments and simulations is useful in understanding the underlying nature of ram accelerator propulsive regimes, as well as assisting in the validation of three-dimensional CFD coded which model unsteady, chemically reactive flows.

  3. Melatonin MT₁ and MT₂ Receptors in the Ram Reproductive Tract.

    PubMed

    González-Arto, Marta; Aguilar, David; Gaspar-Torrubia, Elena; Gallego, Margarita; Carvajal-Serna, Melissa; Herrera-Marcos, Luis V; Serrano-Blesa, Edith; Hamilton, Thais Rose Dos Santos; Pérez-Pé, Rosaura; Muiño-Blanco, Teresa; Cebrián-Pérez, José A; Casao, Adriana

    2017-03-19

    Some melatonin functions in mammals are exerted through MT₁ and MT₂ receptors. However, there are no reports of their presence in the reproductive tract of the ram, a seasonal species. Thus, we have investigated their existence in the ram testis, epididymis, accessory glands and ductus deferens. Real-time polymerase chain reaction (qPCR) revealed higher levels of m-RNA for both receptors in the testis, ampulla, seminal vesicles, and vas deferens, than in the other organs of the reproductive tract (p < 0.05). Western blot analyses showed protein bands compatible with the MT₁ in the testis and cauda epididymis, and for the MT₂ in the cauda epididymis and deferent duct. Immunohistochemistry analyses revealed the presence of MT₁ receptors in spermatogonias, spermatocytes, and spermatids, and MT₂ receptors in the newly-formed spermatozoa in the testis, whereas both receptors were located in the epithelial cells of the ampulla, seminal vesicles, and ductus deferens. Indirect immunofluorescence showed significant differences in the immunolocation of both receptors in spermatozoa during their transit in the epididymis. In conclusion, it was demonstrated that melatonin receptors are present in the ram reproductive tract. These results open the way for new studies on the molecular mechanism of melatonin and the biological significance of its receptors.

  4. Experiments on hypersonic ramjet propulsion cycles using a ram accelerator

    NASA Technical Reports Server (NTRS)

    Chew, G.; Knowlen, C.; Burnham, E. A.; Hertzberg, A.; Bruckner, A. P.

    1991-01-01

    Work on hypersonic propulsion research using a ram accelerator is presented. Several different ram accelerator propulsive cycles have been experimentally demonstrated over the Mach number range of 3 to 8.5. The subsonic, thermally choked combustion mode has accelerated projectiles to near the Chapman-Jouguet (C-J) detonation velocity within many different propellant mixtures. In the transdetonative velocity regime (85 to 115 percent of C-J speed), projectiles have established a propulsive cycle which allows them to transition smoothly from subdetonative to superdetonative velocities. Luminosity data indicate that the combustion process moves forward onto the projectile body as it approaches the C-J speed. In the superdetonative velocity range, the projectiles accelerate while always traveling faster than the C-J velocity. Ram accelerator projectiles operating continuously through these velocity regimes generate distinctive hypersonic phenomena which can be studied very effectively in the laboratory. These results would be very useful for validating sophisticated CFD computer codes and in collecting engineering data for potential airbreathing hypersonic propulsive systems.

  5. Bipartite memory network architectures for parallel processing

    SciTech Connect

    Smith, W.; Kale, L.V. . Dept. of Computer Science)

    1990-01-01

    Parallel architectures are boradly classified as either shared memory or distributed memory architectures. In this paper, the authors propose a third family of architectures, called bipartite memory network architectures. In this architecture, processors and memory modules constitute a bipartite graph, where each processor is allowed to access a small subset of the memory modules, and each memory module allows access from a small set of processors. The architecture is particularly suitable for computations requiring dynamic load balancing. The authors explore the properties of this architecture by examining the Perfect Difference set based topology for the graph. Extensions of this topology are also suggested.

  6. Studies on Freezing RAM Semen in Absence of Glycerol.

    NASA Astrophysics Data System (ADS)

    Abdelnaby, Abdelhady Abdelhakeam

    1988-12-01

    Glycerol is widely used as a major cryoprotective agent for freezing spermatozoa of almost all species. However, it reduces fertility of sheep inseminated cervically compared with intrauterine insemination. Studies were conducted to develop a method and procedure for freezing ram semen in the absence of glycerol. Post -thaw survival of ram spermatozoa frozen in the absence of glycerol was affected by time and temperature after collection and before dilution and time after dilution and before freezing. Increase in time at 5^ circC before or after dilution and before freezing increased both post-thaw motility and number of cells passing through Sephadex filter. A cold dilution method was developed. Slow cooling of fresh ram semen and diluting at 5^circ C 2-3 hr. after collection, then freezing 1 hr. after dilution improved both post-thaw motility and number of cells passing through Sephadex filter compared with immediate dilution at 30-37^circC after collection and freezing 3-4 hr. later (P < 0.05). An extender was developed to freeze ram semen in the absence of glycerol. An increase in post-thaw motility was obtained when semen was extended in TES titrated with Tris to pH 7.0 (TEST) and osmotic pressure of 375-400 mOsm/kg, containing 25-30% (v/v) egg yolk and 10% (v/v) maltose. A special device (boat) for freezing was constructed to insure the same height of the sample above LN _2 and thus the same freezing rate from freeze to freeze. Freezing of semen in 0.25cc straws at 5-10 cm above LN_2 (73.8 to 49.5 ^circC/min) yielded higher post-thaw motility than the rates resulted from freezing at 15 cm above LN_2 or 1 cm above LN _2. Faster Thawing in 37^ circC water for 30 sec. (7.8^ circC/sec.) increased post-thaw motility compared with slower thawing in 5 or 20^circ C water (P < 0.05). A lambing rate of 52.2% was obtained in one fertility trial conducted with ram semen frozen without glycerol and 17.1% in a second trial. One injection (IM) of 15 mg PGF_{2alpha}/ewe for

  7. Plated wire memory subsystem

    NASA Technical Reports Server (NTRS)

    Reynolds, L.; Tweed, H.

    1972-01-01

    The work performed entailed the design, development, construction and testing of a 4000 word by 18 bit random access, NDRO plated wire memory for use in conjunction with a spacecraft imput/output unit and central processing unit. The primary design parameters, in order of importance, were high reliability, low power, volume and weight. A single memory unit, referred to as a qualification model, was delivered.

  8. Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

    NASA Astrophysics Data System (ADS)

    Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

    2009-12-01

    The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

  9. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

    NASA Technical Reports Server (NTRS)

    Roeder, Jeffrey F. (Inventor); Chen, Ing-Shin (Inventor); Bilodeau, Steven (Inventor); Baum, Thomas H. (Inventor)

    2001-01-01

    A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

  10. Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

    NASA Astrophysics Data System (ADS)

    Briggs, Benjamin D.

    The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

  11. Plated wire memory subsystem

    NASA Technical Reports Server (NTRS)

    Carpenter, K. H.

    1974-01-01

    The design, construction, and test history of a 4096 word by 18 bit random access NDRO Plated Wire Memory for use in conjunction with a spacecraft input/output and central processing unit is reported. A technical and functional description is given along with diagrams illustrating layout and systems operation. Test data is shown on the procedures and results of system level and memory stack testing, and hybrid circuit screening. A comparison of the most significant physical and performance characteristics of the memory unit versus the specified requirements is also included.

  12. The Register of Antarctic Marine Species (RAMS): a ten-year appraisal

    PubMed Central

    Jossart, Quentin; Moreau, Camille; Agüera, Antonio; Broyer, Claude De; Danis, Bruno

    2015-01-01

    Abstract The Register of Antarctic Marine Species (RAMS) is a marine species database that manages an authoritative taxonomic list of species occurring in the Southern Ocean. RAMS links with several other initiatives managing biogeographic or genomics information. The current paper aims to briefly present RAMS and provides an updated snapshot of its contents, in the form of a DarwinCore checklist (available through http://ipt.biodiversity.aq/resource.do?r=rams) and illustrative barplots. Moreover, this article presents a ten year appraisal (since the creation of RAMS). This appraisal first focuses on RAMS bibliometrics. We observed that RAMS was cited (Google Scholar) in 50 distinct publications among which 32 were peer-reviewed in 18 different journals. Three journals (Antarctic Science, Polar Biology, ZooKeys) represent almost 40% of these peer-review publications. The second appraisal focuses on the evolution of new RAMS records. We observed an important decrease in data additions since 2011. As a case study, we focused on an original dataset for a specific group (Asteroidea, Echinodermata). It appears that around one hundred species of asteroids are lacking in RAMS despite the relatively high availability of these data. This suggests that the users’ community (or collaborative projects such as AquaRES) could be helpful in order to maintain the RAMS database over the long term. PMID:26478709

  13. Memory hierarchy using row-based compression

    DOEpatents

    Loh, Gabriel H.; O'Connor, James M.

    2016-10-25

    A system includes a first memory and a device coupleable to the first memory. The device includes a second memory to cache data from the first memory. The second memory includes a plurality of rows, each row including a corresponding set of compressed data blocks of non-uniform sizes and a corresponding set of tag blocks. Each tag block represents a corresponding compressed data block of the row. The device further includes decompression logic to decompress data blocks accessed from the second memory. The device further includes compression logic to compress data blocks to be stored in the second memory.

  14. Remembering, imagining, false memories & personal meanings.

    PubMed

    Conway, Martin A; Loveday, Catherine

    2015-05-01

    The Self-Memory System encompasses the working self, autobiographical memory and episodic memory. Specific autobiographical memories are patterns of activation over knowledge structures in autobiographical and episodic memory brought about by the activating effect of cues. The working self can elaborate cues based on the knowledge they initially activate and so control the construction of memories of the past and the future. It is proposed that such construction takes place in the remembering-imagining system - a window of highly accessible recent memories and simulations of near future events. How this malfunctions in various disorders is considered as are the implication of what we term the modern view of human memory for notions of memory accuracy. We show how all memories are to some degree false and that the main role of memories lies in generating personal meanings.

  15. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

    NASA Astrophysics Data System (ADS)

    Gong, Yue-Feng; Song, Zhi-Tang; Ling, Yun; Liu, Yan; Feng, Song-Lin

    2009-11-01

    A three-dimensional finite element model for phase change random access memory (PCRAM) is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure (HS) and the ring-type contact in bottom electrode (RIB) structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interfacial layer and building a new device structure. The simulation results indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.

  16. Effect of selenium supplementation on semen characteristics of Brazil's ram.

    PubMed

    Piagentini, M; Silva, D C; Dell'Aqua, Cpf; Moya-Araujo, C F; Codognoto, V M; Ramos, A A; Oba, E

    2017-02-20

    The aim of this study was to investigate the effects of different concentrations of oral supplementation with selenium (Se) upon ram sperm parameters. Thirty rams managed in stall under intensive system were used and divided into five groups (six animals per group) as follows: control group (G1) mineral mixture supplementation without Se, group 2 (G2) mineral mixture supplemented with 5 mg/kg Se, group 3 (G3) supplemented with 10 mg/kg Se, group 4 (G4) supplemented with 15 mg/kg Se and group 5 (G5) supplemented with 20 mg/kg Se. For each group, there was an adjustment period of 14 days. The experimental period was 350 days. Every 56 days, the animals were weighed and semen samples were collected by electroejaculation. Semen analysis included volume, mass moviment, total motility, vigour, concentration and morphology. For plasmatic and acrosomal membrane integrity evaluation and mitochondrial membrane potential were used a combination of fluorescent probes. Differences between means values obtained by analysis of variance were verified by Tukey test with 5% probability. There was no statistical difference between treatment groups in relation to volume, mass moviment, total motility, vigour, concentration, plasma and acrosomal membrane integrity (p > .05). Sperm morphology was different between treatment groups, the G1 (0 mg of selenium) had the highest percentage of major defects (11.11 ± 1.11(a) ; p < .05). It was concluded that selenium decrease the percentage of sperm defects and did not directly influence on ram sperm volume, mass moviment, total motility, vigour, concentration and membrane integrity.

  17. Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

    SciTech Connect

    Devulder, Wouter De Schutter, Bob; Detavernier, Christophe; Opsomer, Karl; Franquet, Alexis; Meersschaut, Johan; Muller, Robert; Van Elshocht, Sven; Jurczak, Malgorzata; Goux, Ludovic; Belmonte, Attilio

    2014-02-07

    In this paper, we investigate the influence of the carbon content on the Cu-Te phase formation and on the resistive switching behavior in carbon alloyed Cu{sub 0.6}Te{sub 0.4} based conductive bridge random access memory (CBRAM) cells. Carbon alloying of copper-tellurium inhibits the crystallization, while attractive switching behavior is preserved when using the material as Cu-supply layer in CBRAM cells. The phase formation is first investigated in a combinatorial way. With increasing carbon content, an enlargement of the temperature window in which the material stays amorphous was observed. Moreover, if crystalline phases are formed, subsequent phase transformations are inhibited. The electrical switching behavior of memory cells with different carbon contents is then investigated by implementing them in 580 μm diameter dot TiN/Cu{sub 0.6}Te{sub 0.4}-C/Al{sub 2}O{sub 3}/Si memory cells. Reliable switching behavior is observed for carbon contents up to 40 at. %, with a resistive window of more than 2 orders of magnitude, whereas for 50 at. % carbon, a higher current in the off state and only a small resistive window are present after repeated cycling. This degradation can be ascribed to the higher thermal and lower drift contribution to the reset operation due to a lower Cu affinity towards the supply layer, leading cycle-after-cycle to an increasing amount of Cu in the switching layer, which contributes to the current. The thermal diffusion of Cu into Al{sub 2}O{sub 3} under annealing also gives an indication of the Cu affinity of the source layer. Time of flight secondary ion mass spectroscopy was used to investigate this migration depth in Al{sub 2}O{sub 3} before and after annealing, showing a higher Cu, Te, and C migration for high carbon contents.

  18. Ram air turbine driving a variable displacement hydraulic pump

    SciTech Connect

    Dickes, G.E.; Brekhus, R.D.; Seidel, W.E.

    1992-09-08

    This patent describes a ram air turbine for use in generating power for an aircraft by driving a load with an airstream intercepting blades of the turbine as the aircraft moves through the air with the turbine applying power to the load during rotation of the blades in a first rotational velocity range and during rotation of the blades in a second rotational velocity range which is lower than the first rotational velocity. It comprises a variable displacement hydraulic pump; and a reduced power output.

  19. Ram accelerator direct launch system for space cargo

    NASA Technical Reports Server (NTRS)

    1987-01-01

    A new method of efficiently accelerating relatively large masses (up to several metric tons) to velocities of 0.6 km/sec up to 12 km/sec using chemical energy has been developed. The vehicle travels through a tube filled with a premixed gaseous fuel and oxidizer mixture. There is no propellant on-board the vehicle. The tube acts as the outer cowling of a ram jet and the energy release process travels with the vehicle. The ballistic efficiency remains high up to extremely high velocities and the acceleration can be maintained at a nearly constant level. Five modes of ram accelerator operation have been investigated; these modes differ primarily in the method of chemical heat release and the operational velocity range, and include two subsonic combustion modes (one of which involves thermally choke a combustion behind the vehicle) and three detonation drive modes. These modes of propulsion are capable of efficient acceleration in the range of 0.6-12 km/sec, although aerodynamic heating becomes severe above about 8 km/sec. Experiments carried out to date at the University of Washington up to 2 km/sec have established proof of principle of the ram accelerator concept and have shown close agreement between predicted and measured performance. A launch system capable of delivering two metric tons into low earth orbit was selected for the purposes of the present study. The preliminary analysis indicates that the overall dimensions of a restricted acceleration (less than approx. 1000 g) launch facility would require a tube 1 m in diameter, with an overall length of approximately 4 km. As in any direct launch scheme, a small on-board rocket is required to circularize the otherwise highly elliptical orbit which intersects the Earth. Various orbital insertion scenarios have been explored for the case of a 9 km/sec ram accelerator launch. These include direct insertion through a single circularization maneuver (i.e., on rocket burn), insertion involving two burns, and a

  20. History of fat grafting: from ram fat to stem cells.

    PubMed

    Mazzola, Riccardo F; Mazzola, Isabella C

    2015-04-01

    Fat injection empirically started 100 years ago to correct contour deformities mainly on the face and breast. The German surgeon Eugene Hollaender (1867-1932) proposed a cocktail of human and ram fat, to avoid reabsorption. Nowadays, fat injection has evolved, and it ranks among the most popular procedures, for it provides the physician with a range of aesthetic and reconstructive clinical applications with regenerative effects on the surrounding tissues. New research from all over the world has demonstrated the role of adipose-derived stem cells, present in the adipose tissue, in the repair of damaged or missing tissues.

  1. Memory Matters

    MedlinePlus

    ... different parts. Some of them are important for memory. The hippocampus (say: hih-puh-KAM-pus) is one of the more important parts of the brain that processes memories. Old information and new information, or memories, are ...

  2. Demystifying the Beginnings of Memory

    ERIC Educational Resources Information Center

    Howe, Mark L.; Courage, Mary L.

    2004-01-01

    A longstanding issue in psychology has been, When does human memory begin? More particularly, when do we begin to remember personal experiences in a way that makes them accessible to recollection later in life? Current popular and scientific thinking would have us believe that memories are possible not only at the time of our birth, but also in…

  3. Effect of heterologous seminal plasma and semen extenders on motility of frozen-thawed ram spermatozoa.

    PubMed

    Mataveia, G A; Terblanche, S J; Nöthling, J O; Gerber, D

    2010-09-01

    Ram seminal plasma increases the fertility of frozen-thawed ram spermatozoa deposited into the cervix. The aim of the current study was to compare the effect of ram seminal plasma to that of bull seminal plasma, dog prostatic fluid, protein-free TALP TrilEq (Triladyl with 0.5 mt of Equex STM paste added to each 100 mt) and heat-treated skim milk on longevity and percentages of progressively motile and aberrantly motile frozen-thawed ram spermatozoa. Three ejaculates from each of 6 rams were extended in TrilEq, pooled and frozen in straws as a single batch per ram. One hundred and eight straws (3 straws from each ram for each fluid) were thawed in random order. Once thawed, a straw was emptied into a tube with 0.85 ml of the appropriate fluid at 37 degrees C and kept at that temperature for 6 h. Motility was assessed at x200 magnification immediately (time zero) and 2, 4 and 6 h after thawing. Progressive motility decreased from each time to the next (P < 0.05) and was 39.0 % (0 h), 26.0 % (2 h), 19.6 % (4 h) and 12.6 % (6 h); SEM 1.24, n = 108 for each group. Ram seminal plasma resulted in higher progressive motility than bull seminal plasma, lower than milk, and similar to the other fluids. Ram seminal plasma resulted in lower aberrant motility than protein-free TALP and similar aberrant motility to other fluids. The effect of ram seminal plasma and dog prostatic fluid was very similar. The effect of ram seminal plasma on the fertility of frozen-thawed ram spermatozoa deposited into the cervix is not due an exceptionally beneficial effect on the motility of spermatozoa.

  4. Numerical Study of Ram Air Airfoils and Upper Surface Bleed-Air Control

    DTIC Science & Technology

    2014-06-16

    of ram -air parachute systems to complement the design and analysis of new and existing airdrop systems. In this paper an unsteady numerical study of...two-dimensional, rigid, ram -air sections with an array of upper surface bleed-air actuators is presented. Aerodynamic forces and lift-to-drag ratios of...a modified Clark-Y ram -air airfoil are calculated from unsteady Reynolds-Averaged Navier-Stokes (RANS) simulations, using the Kestrel and Cobalt flow

  5. Read disturb errors in a CMOS static RAM chip. [radiation hardened for spacedraft

    NASA Technical Reports Server (NTRS)

    Wood, Steven H.; Marr, James C., IV; Nguyen, Tien T.; Padgett, Dwayne J.; Tran, Joe C.; Griswold, Thomas W.; Lebowitz, Daniel C.

    1989-01-01

    Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

  6. Elucidation of the RamA Regulon in Klebsiella pneumoniae Reveals a Role in LPS Regulation

    PubMed Central

    De Majumdar, Shyamasree; Yu, Jing; Fookes, Maria; McAteer, Sean P.; Llobet, Enrique; Finn, Sarah; Spence, Shaun; Monaghan, Avril; Kissenpfennig, Adrien; Ingram, Rebecca J.; Bengoechea, José; Gally, David L.; Fanning, Séamus; Elborn, Joseph S.; Schneiders, Thamarai

    2015-01-01

    Klebsiella pneumoniae is a significant human pathogen, in part due to high rates of multidrug resistance. RamA is an intrinsic regulator in K. pneumoniae established to be important for the bacterial response to antimicrobial challenge; however, little is known about its possible wider regulatory role in this organism during infection. In this work, we demonstrate that RamA is a global transcriptional regulator that significantly perturbs the transcriptional landscape of K. pneumoniae, resulting in altered microbe-drug or microbe-host response. This is largely due to the direct regulation of 68 genes associated with a myriad of cellular functions. Importantly, RamA directly binds and activates the lpxC, lpxL-2 and lpxO genes associated with lipid A biosynthesis, thus resulting in modifications within the lipid A moiety of the lipopolysaccharide. RamA-mediated alterations decrease susceptibility to colistin E, polymyxin B and human cationic antimicrobial peptide LL-37. Increased RamA levels reduce K. pneumoniae adhesion and uptake into macrophages, which is supported by in vivo infection studies, that demonstrate increased systemic dissemination of ramA overexpressing K. pneumoniae. These data establish that RamA-mediated regulation directly perturbs microbial surface properties, including lipid A biosynthesis, which facilitate evasion from the innate host response. This highlights RamA as a global regulator that confers pathoadaptive phenotypes with implications for our understanding of the pathogenesis of Enterobacter, Salmonella and Citrobacter spp. that express orthologous RamA proteins. PMID:25633080

  7. The modification and application of RAMS computer code. Final report

    SciTech Connect

    McKee, T.B.

    1995-01-17

    The Regional Atmospheric Modeling System (RAMS) has been utilized in its most updated form, version 3a, to simulate a case night from the Atmospheric Studies in COmplex Terrain (ASCOT) experimental program. ASCOT held a wintertime observational campaign during February, 1991 to observe the often strong drainage flows which form on the Great Plains and in the canyons embedded within the slope from the Continental Divide to the Great Plains. A high resolution (500 m grid spacing) simulation of the 4-5 February 1991 case night using the more advanced turbulence closure now available in RAMS 3a allowed greater analysis of the physical processes governing the drainage flows. It is found that shear interaction above and within the drainage flow are important, and are overpredicted with the new scheme at small grid spacing (< {approximately}1000 m). The implication is that contaminants trapped in nighttime stable flows such as these, will be mixed too strongly in the vertical reducing predicted ground concentrations. The HYPACT code has been added to the capability at LANL, although due to the reduced scope of work, no simulations with HYPACT were performed.

  8. The ram accelerator - A chemically driven mass launcher

    NASA Technical Reports Server (NTRS)

    Kaloupis, P.; Bruckner, A. P.

    1988-01-01

    The ram accelerator, a chemically propelled mass driver, is presented as a viable new approach for directly launching acceleration-insensitive payloads into low earth orbit. The propulsion principle is similar to that of a conventional air-breathing ramjet. The cargo vehicle resembles the center-body of a ramjet and travels through a tube filled with a pre-mixed fuel and oxidizer mixture. The launch tube acts as the outer cowling of the ramjet and the combustion process travels with the vehicle. Two drive modes of the ram accelerator propulsion system are described, which when used in sequence are capable of accelerating the vehicle to as high as 10 km/sec. The requirements are examined for placing a 2000 kg vehicle into a 500 km orbit with a minimum of on-board rocket propellant for circularization maneuvers. It is shown that aerodynamic heating during atmospheric transit results in very little ablation of the nose. An indirect orbital insertion scenario is selected, utilizing a three step maneuver consisting of two burns and aerobraking. An on-board propulsion system using storable liquid propellants is chosen in order to minimize propellant mass requirements, and the use of a parking orbit below the desired final orbit is suggested as a means to increase the flexibility of the mass launch concept. A vehicle design using composite materials is proposed that will best meet the structural requirements, and a preliminary launch tube design is presented.

  9. Ram accelerator direct launch system for space cargo

    NASA Technical Reports Server (NTRS)

    Bruckner, A. P.; Hertzberg, A.

    1987-01-01

    The ram accelerator, a chemically-propelled mass driver, is presented as a new approach for directly launching acceleration-insensitive pay-loads into LEO. The cargo vehicle resembles the centerbody of a conventional ramjet and travels through a launch tube filled with a premixed gaseous fuel and oxidizer mixture. The tube acts as the outer cowling of the ramjet and the combustion process travels with the vehicle. Two modes of ram accelerator drive are described, which when used in sequence, are capable of accelerating the cargo vehicle to 10 km/sec. The requirements for placing a 2000 kg vehicle with 50 percent payload fraction into a 400 km orbit, with a minimum of on-board rocket propellant for circularization maneuvers, are examined. It is shown that aerodynamic heating during atmospheric transit results in very little ablation of the nose. Both direct and indirect orbital insertion scenarios are investigated, and a three-step maneuver consisting of two burns and aerobraking is found to minimize the on-board propellant mass. A scenario involving a parking orbit below the desired final orbit is suggested as a means to increase the flexibility of the mass launch concept.

  10. Experimental and numerical investigation of ram extrusion of bread dough

    NASA Astrophysics Data System (ADS)

    Mohammed, M. A. P.; Wanigasooriya, L.; Charalambides, M. N.

    2016-10-01

    An experimental and numerical study on ram extrusion of bread dough was conducted. A laboratory ram extrusion rig was designed and manufactured, where dies with different angles and exit radii were employed. Rate dependent behaviour was observed from tests conducted at different extrusion speeds, and higher extrusion pressure was reported for dies with decreasing exit radius. A finite element simulation of extrusion was performed using the adaptive meshing technique in Abaqus. Simulations using a frictionless contact between the billet and die wall showed that the model underestimates the response at high entry angles. On the other hand, when the coefficient of friction value was set to 0.09 as measured from friction experiments, the dough response was overestimated, i.e. the model extrusion pressure was much higher than the experimentally measured values. When a critical shear stress limit, τmax, was used, the accuracy of the model predictions improved. The results showed that higher die angles require higher τmax values for the model and the experiments to agree.

  11. Flow over a Ram-Air Parachute Canopy

    NASA Astrophysics Data System (ADS)

    Eslambolchi, Ali; Johari, Hamid

    2012-11-01

    The flow field over a full-scale, ram-air personnel parachute canopy was investigated numerically using a finite-volume flow solver coupled with the Spalart-Allmaras turbulence model. Ram-air parachute canopies resemble wings with arc-anhedral, surface protuberances, and an open leading edge for inflation. The rectangular planform canopy had an aspect ratio of 2.2 and was assumed to be rigid and impermeable. The chord-based Reynolds number was 3.2 million. Results indicate that the oncoming flow barely penetrates the canopy opening, and creates a large separation bubble below the lower lip of canopy. A thick boundary layer exists over the entire lower surface of the canopy. The flow over the upper surface of the canopy remains attached for an extended fraction of the chord. Lift increases linearly with angle of attack up to about 12 degrees. To assess the capability of lifting-line theory in predicting the forces on the canopy, the lift and drag data from a two-dimensional simulation of the canopy profile were extended using finite-wing expressions and compared with the forces from the present simulations. The finite-wing predicted lift and drag trends compare poorly against the full-span simulation, and the maximum lift-to-drag ratio is over-predicted by 36%. Sponsored by the US Army NRDEC.

  12. Flow over a Modern Ram-Air Parachute Canopy

    NASA Astrophysics Data System (ADS)

    Mohammadi, Mohammad; Johari, Hamid

    2010-11-01

    The flow field on the central section of a modern ram-air parachute canopy was examined numerically using a finite-volume flow solver coupled with the one equation Spalart-Allmaras turbulence model. Ram-air parachutes are used for guided airdrop applications, and the canopy resembles a wing with an open leading edge for inflation. The canopy surfaces were assumed to be impermeable and rigid. The flow field consisted of a vortex inside the leading edge opening which effectively closed off the canopy and diverted the flow around the leading edge. The flow experienced a rather bluff leading edge in contrast to the smooth leading of an airfoil, leading to a separation bubble on the lower lip of the canopy. The flow inside the canopy was stagnant beyond the halfway point. The section lift coefficient increased linearly with the angle of attack up to 8.5 and the lift curve slope was about 8% smaller than the baseline airfoil. The leading edge opening had a major effect on the drag prior to stall; the drag is at least twice the baseline airfoil drag. The minimum drag of the section occurs over the angle of attack range of 3 -- 7 .

  13. Characterization of Malaysian Trichoderma isolates using random amplified microsatellites (RAMS).

    PubMed

    Siddiquee, Shafiquzzaman; Tan, Soon Guan; Yusuf, Umi Kalsom; Fatihah, Nur Hasan Nudin; Hasan, Md Mainul

    2012-01-01

    Trichoderma species are commercially applied as biocontrol agents against numerous plant pathogenic fungi due to their production of antifungal metabolites, competition for nutrients and space, and mycoparasitism. However, currently the identification of Trichoderma species from throughout the world based on micro-morphological descriptions is tedious and prone to error. The correct identification of Trichoderma species is important as several traits are species-specific. The Random Amplified Microsatellites (RAMS) analysis done using five primers in this study showed different degrees of the genetic similarity among 42 isolates of this genus. The genetic similarity values were found to be in the range of 12.50-85.11% based on a total of 76 bands scored in the Trichoderma isolates. Of these 76 bands, 96.05% were polymorphic, 3.95% were monomorphic and 16% were exclusive bands. Two bands (250 bp and 200 bp) produced by primer LR-5 and one band (250 bp) by primer P1A were present in all the Trichoderma isolates collected from healthy and infected oil palm plantation soils. Cluster analysis based on UPGMA of the RAMS marker data showed that T. harzianum, T. virens and T. longibrachiatum isolates were grouped into different clades and lineages. In this study we found that although T. aureoviride isolates were morphologically different when compared to T. harzianum isolates, the UPGMA cluster analysis showed that the majority isolates of T. aureoviride (seven from nine) were closely related to the isolates of T. harzianum.

  14. Space shuttle Ram glow: Implication of NO2 recombination continuum

    NASA Astrophysics Data System (ADS)

    Swenson, G. R.; Mende, S. B.; Clifton, S.

    1985-09-01

    The ram glow data gathered to data from imaging experiments on space shuttle suggest the glow is a continuum (within 34 angstrom resolution); the continuum shape is such that the peak is near 7000 angstroms decreasing to the blue and red, and the average molecular travel leading to emission after leaving the surface is 20 cm (assuming isotropic scattering from the surface). Emission continuum is rare in molecular systems but the measured spectrum does resemble the laboratory spectrum of NO2 (B) recombination continuum. The thickness of the observed emission is consistent with the NO2 hypothesis given an exit velocity of approx. 2.5 km/sec (1.3 eV) which leaves approx. 3.7 eV of ramming OI energy available for unbonding the recombined NO2 from the surface. The NO2 is formed in a 3-body recombination of OI + NO + m = NO2 + m where OI originates from the atmosphere and NO is chemically formed on the surface from atmospheric NI and OI. The spacecraft surface then acts as the n for the reaction: Evidence exists from orbital mass spectrometer data that the NO and NO2 chemistry described in this process does occur on surfaces of spectrometer orifices in orbit. Surface temperature effects are likely a factor in the NO sticking efficiency and, therefore, glow intensities.

  15. Sperm head phenotype and male fertility in ram semen.

    PubMed

    Maroto-Morales, A; Ramón, M; García-Álvarez, O; Montoro, V; Soler, A J; Fernández-Santos, M R; Roldan, E R S; Pérez-Guzmán, M D; Garde, J J

    2015-12-01

    Although there is ample evidence for the effects of sperm head shape on sperm function, its impact on fertility has not been explored in detail at the intraspecific level in mammals. Here, we assess the relationship between sperm head shape and male fertility in a large-scale study in Manchega sheep (Ovis aries), which have not undergone any selection for fertility. Semen was collected from 83 mature rams, and before insemination, head shapes were measured for five parameters: area, perimeter, length, width, and p2a (perimeter(2)/2×π×area) using a computer-assisted sperm morphometric analysis. In addition, a cluster analysis using sperm head length and p2a factor was performed to determine sperm subpopulations (SPs) structure. Our results show the existence of four sperm SPs, which present different sperm head phenotype: SP1 (large and round), SP2 (short and elongated), SP3 (shortest and round), and SP4 (large and the most elongated). No relationships were found between males' fertility rates and average values of sperm head dimensions. However, differences in fertility rates between rams were strongly associated to the proportion of spermatozoa in an ejaculate SP with short and elongated heads (P < 0.001). These findings show how the heterogeneity in sperm head shape of the ejaculate has an effect on reproductive success, and highlight the important role of modulation of the ejaculate at the intraspecific level.

  16. Enhancing Memory in Your Students: COMPOSE Yourself!

    ERIC Educational Resources Information Center

    Rotter, Kathleen M.

    2009-01-01

    The essence of teaching is, in fact, creating new memories for your students. The teacher's role is to help students store the correct information (memories) in ways that make recall and future access and use likely. Therefore, choosing techniques to enhance memory is possibly the most critical aspect of instructional design. COMPOSE is an acronym…

  17. Spatial and Working Memory Is Linked to Spine Density and Mushroom Spines

    PubMed Central

    Aher, Yogesh D.; Sase, Ajinkya; Gröger, Marion; Mokhtar, Maher; Höger, Harald; Lubec, Gert

    2015-01-01

    Background Changes in synaptic structure and efficacy including dendritic spine number and morphology have been shown to underlie neuronal activity and size. Moreover, the shapes of individual dendritic spines were proposed to correlate with their capacity for structural change. Spine numbers and morphology were reported to parallel memory formation in the rat using a water maze but, so far, there is no information on spine counts or shape in the radial arm maze (RAM), a frequently used paradigm for the evaluation of complex memory formation in the rodent. Methods 24 male Sprague-Dawley rats were divided into three groups, 8 were trained, 8 remained untrained in the RAM and 8 rats served as cage controls. Dendritic spine numbers and individual spine forms were counted in CA1, CA3 areas and dentate gyrus of hippocampus using a DIL dye method with subsequent quantification by the Neuronstudio software and the image J program. Results Working memory errors (WME) and latency in the RAM were decreased along the training period indicating that animals performed the task. Total spine density was significantly increased following training in the RAM as compared to untrained rats and cage controls. The number of mushroom spines was significantly increased in the trained as compared to untrained and cage controls. Negative significant correlations between spine density and WME were observed in CA1 basal dendrites and in CA3 apical and basal dendrites. In addition, there was a significant negative correlation between spine density and latency in CA3 basal dendrites. Conclusion The study shows that spine numbers are significantly increased in the trained group, an observation that may suggest the use of this method representing a morphological parameter for memory formation studies in the RAM. Herein, correlations between WME and latency in the RAM and spine density revealed a link between spine numbers and performance in the RAM. PMID:26469788

  18. Memory Loss and Retrieval

    ERIC Educational Resources Information Center

    Reid, Ian

    2016-01-01

    Underlying the generally oblivious attitude of teachers and learners towards the past is insufficient respect for the role of memory in giving meaning to experience and access to knowledge. We shape our identity by making sense of our past and its relationship to present and future selves, a process that should be intensively cultivated when we…

  19. Computer-assisted machine-to-human protocols for authentication of a RAM-based embedded system

    NASA Astrophysics Data System (ADS)

    Idrissa, Abdourhamane; Aubert, Alain; Fournel, Thierry

    2012-06-01

    Mobile readers used for optical identification of manufactured products can be tampered in different ways: with hardware Trojan or by powering up with fake configuration data. How a human verifier can authenticate the reader to be handled for goods verification? In this paper, two cryptographic protocols are proposed to achieve the verification of a RAM-based system through a trusted auxiliary machine. Such a system is assumed to be composed of a RAM memory and a secure block (in practice a FPGA or a configurable microcontroller). The system is connected to an input/output interface and contains a Non Volatile Memory where the configuration data are stored. Here, except the secure block, all the blocks are exposed to attacks. At the registration stage of the first protocol, the MAC of both the secret and the configuration data, denoted M0 is computed by the mobile device without saving it then transmitted to the user in a secure environment. At the verification stage, the reader which is challenged with nonces sendsMACs / HMACs of both nonces and MAC M0 (to be recomputed), keyed with the secret. These responses are verified by the user through a trusted auxiliary MAC computer unit. Here the verifier does not need to tract a (long) list of challenge / response pairs. This makes the protocol tractable for a human verifier as its participation in the authentication process is increased. In counterpart the secret has to be shared with the auxiliary unit. This constraint is relaxed in a second protocol directly derived from Fiat-Shamir's scheme.

  20. Magnetic vortex racetrack memory

    NASA Astrophysics Data System (ADS)

    Geng, Liwei D.; Jin, Yongmei M.

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

  1. Ultrafast Target Recognition via Super-Parallel Holograph Based Correlator, RAM and Associative Memory

    DTIC Science & Technology

    2008-03-11

    CORRELATOR In many pattern- recognition and target tracking applications, the speed of the detection system is of critical importance [1-3]. Optical...time target identification and recognition is usually performed by correlating an acquired image with images stored in a database. Current image... recognition and target -tracking applications, the speed of the detection system is of critical importance [1-3]. Optical correlation techniques in which

  2. The utility of nanowater for ram semen cryopreservation.

    PubMed

    Murawski, Maciej; Schwarz, Tomasz; Grygier, Joanna; Patkowski, Krzysztof; Oszczęda, Zdzisław; Jelkin, Igor; Kosiek, Anna; Gruszecki, Tomasz M; Szymanowska, Anna; Skrzypek, Tomasz; Zieba, Dorota A; Bartlewski, Pawel M

    2015-05-01

    Nanowater (NW; water declusterized in the low-temperature plasma reactor) has specific physicochemical properties that could increase semen viability after freezing and hence fertility after artificial insemination (AI) procedures. The main goal of this study was to evaluate ram semen quality after freezing in the media containing NW. Ejaculates from 10 rams were divided into two equal parts, diluted in a commercially available semen extender (Triladyl®; MiniTüb GmbH, Tiefenbach, Germany) prepared with deionized water (DW) or NW, and then frozen in liquid nitrogen. Semen samples were examined for sperm motility and morphology using the sperm class analyzer system and light microscopy. Cryo-scanning electron microscopy (cryo-SEM) was employed to determine the size of extracellular water crystals in frozen semen samples. Survival time at room temperature, aspartate aminotransferase (AspAT) and alkaline phosphatase (ALP) concentrations post-thawing as well as conception/lambing rates after laparoscopic intrauterine AI of 120 ewes were also determined. There were no significant differences between DW and NW groups in sperm progressive motility (26.4 ± 12.2 and 30.8 ± 12.4%) or survival time (266.6 ± 61.3 and 270.9 ± 76.7 min) after thawing and no differences in the percentages of spermatozoa with various morphological defects before or after freezing. There were, however, differences (P < 0.05) in AspAT (DW: 187.1 ± 160.4 vs. NW: 152.7 ± 118.3 U/l) and ALP concentrations (DW: 2198.3 ± 1810.5 vs. NW: 1612.1 ± 1144.8 U/l) in semen samples post-thawing. Extracellular water crystals were larger (P < 0.05) in ejaculates frozen in NW-containing media. Ultrasonographic examinations on day 40 post-AI revealed higher (P < 0.05) conception rates in ewes inseminated with NW (78.3%) compared with DW semen (58.3%), and the percentages of ewes that carried lambs to term were 73.3% and 45.0% in NW and DW groups, respectively (P < 0.01). In summary, the use of a semen

  3. ISDC Data Access Layer

    NASA Astrophysics Data System (ADS)

    Jennings, D.; Borkowski, J.; Contessi, T.; Lock, T.; Rohlfs, R.; Walter, R.

    The ISDC Data Access Layer (DAL) is an ANSI C and \\fortran 90 compatible library under development in support of the ESA INTEGRAL mission data analysis software. DALs primary purpose is to isolate the analysis software from the specifics of the data formats while at the same time providing new data abstraction and access capabilities. DAL supports the creation and manipulation of hierarchical data sets which may span multiple files and, in theory, multiple computer systems. A number of Application Programming Interfaces (APIs) are supported by DAL that allow software to view and access data at different levels of complexity. DAL also allows data sets to reside on disk, in conventional memory or in shared memory in a way that is transparent to the user/application.

  4. Molecular basis of RNA guanine-7 methyltransferase (RNMT) activation by RAM.

    PubMed

    Varshney, Dhaval; Petit, Alain-Pierre; Bueren-Calabuig, Juan A; Jansen, Chimed; Fletcher, Dan A; Peggie, Mark; Weidlich, Simone; Scullion, Paul; Pisliakov, Andrei V; Cowling, Victoria H

    2016-12-01

    Maturation and translation of mRNA in eukaryotes requires the addition of the 7-methylguanosine cap. In vertebrates, the cap methyltransferase, RNA guanine-7 methyltransferase (RNMT), has an activating subunit, RNMT-Activating Miniprotein (RAM). Here we report the first crystal structure of the human RNMT in complex with the activation domain of RAM. A relatively unstructured and negatively charged RAM binds to a positively charged surface groove on RNMT, distal to the active site. This results in stabilisation of a RNMT lobe structure which co-evolved with RAM and is required for RAM binding. Structure-guided mutagenesis and molecular dynamics simulations reveal that RAM stabilises the structure and positioning of the RNMT lobe and the adjacent α-helix hinge, resulting in optimal positioning of helix A which contacts substrates in the active site. Using biophysical and biochemical approaches, we observe that RAM increases the recruitment of the methyl donor, AdoMet (S-adenosyl methionine), to RNMT. Thus we report the mechanism by which RAM allosterically activates RNMT, allowing it to function as a molecular rheostat for mRNA cap methylation.

  5. The RAM Scale: Development and Validation of the Revised Scale in Likert Format.

    ERIC Educational Resources Information Center

    Wright, Claudia R.; And Others

    1983-01-01

    The development and validation of a revised form of the RAM Scale in Likert format are described. The RAM Scale measures student philosophical orientations in terms of relative, absolute, or mixed biases or preferences toward issues of knowledge, methods, and values. (Author/PN)

  6. Effect of semen extender and storage temperature on ram sperm motility over time

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Storage of ram semen for long period of time depends on a number of factors, including type of extender and storage temperature. A study compared the effect of semen extender and storage temperature on motility of ram semen stored for 72 h. Semen collected via electroejaculator from 5 mature Katahd...

  7. Variation in seminal plasma alters the ability of ram spermatozoa to survive cryopreservation.

    PubMed

    Rickard, J P; Schmidt, R E; Maddison, J W; Bathgate, R; Lynch, G W; Druart, X; de Graaf, S P

    2016-03-01

    Variation in the effect of seminal plasma on sperm function and fertility has been hypothesised to be due to differences between males and their seminal plasma composition. The freezing resilience of individual rams (n=17) was investigated to characterise inter-male variation. This was determined by measuring the degree of change in motility induced by cryopreservation (Experiment 1). Experiment 2 examined the effect of pooled seminal plasma from rams identified as having high or low resilience to freezing on the cryosurvival of washed spermatozoa from either high (n=3) or low (n=3) sperm freezing resilience rams. Immediately after thawing and throughout the incubation period (0-4h), spermatozoa from high-resilience rams frozen with high-resilience seminal plasma demonstrated superior motility to spermatozoa from high-resilience rams frozen with low-resilience seminal plasma (P<0.001). Similarly, spermatozoa from low-resilience rams frozen with high-resilience seminal plasma exhibited higher motility than spermatozoa from low-resilience rams frozen with low-resilience seminal plasma immediately after thawing (0h; P<0.001). The present study shows that variation in freezing resilience of ram spermatozoa is related to the source and composition of the seminal plasma.

  8. Molecular basis of RNA guanine-7 methyltransferase (RNMT) activation by RAM

    PubMed Central

    Varshney, Dhaval; Petit, Alain-Pierre; Bueren-Calabuig, Juan A.; Jansen, Chimed; Fletcher, Dan A.; Peggie, Mark; Weidlich, Simone; Scullion, Paul; Pisliakov, Andrei V.; Cowling, Victoria H.

    2016-01-01

    Maturation and translation of mRNA in eukaryotes requires the addition of the 7-methylguanosine cap. In vertebrates, the cap methyltransferase, RNA guanine-7 methyltransferase (RNMT), has an activating subunit, RNMT-Activating Miniprotein (RAM). Here we report the first crystal structure of the human RNMT in complex with the activation domain of RAM. A relatively unstructured and negatively charged RAM binds to a positively charged surface groove on RNMT, distal to the active site. This results in stabilisation of a RNMT lobe structure which co-evolved with RAM and is required for RAM binding. Structure-guided mutagenesis and molecular dynamics simulations reveal that RAM stabilises the structure and positioning of the RNMT lobe and the adjacent α-helix hinge, resulting in optimal positioning of helix A which contacts substrates in the active site. Using biophysical and biochemical approaches, we observe that RAM increases the recruitment of the methyl donor, AdoMet (S-adenosyl methionine), to RNMT. Thus we report the mechanism by which RAM allosterically activates RNMT, allowing it to function as a molecular rheostat for mRNA cap methylation. PMID:27422871

  9. NGC 4438: Ram pressure sweeping of a tidally disrupted galaxy

    NASA Technical Reports Server (NTRS)

    Hibbard, J. E.; Vangorkom, Jacqueline H.

    1990-01-01

    NGC 4438 is the highly HI deficient peculiar spiral in the center of the Virgo cluster. Observations are given of the neutral hydrogen emission obtained with the Very Large Array (VLA) in the D-array configuration. These observations map out the total HI as determined from single dish measurements, and show the hydrogen to be confined to a region about one third the size of the optical disk and displaced to the side of the galaxy opposite M87. The hydrogen content of the galaxy is over an order of magnitude less than that expected for a galaxy of its type. The data suggest that the HI deficiency is a result of ram pressure stripping of the gas in the outer regions of the galaxy by the hot intracluster medium after being tidally perturbed.

  10. High spatial resolution measurements of ram accelerator gas dynamic phenomena

    NASA Technical Reports Server (NTRS)

    Hinkey, J. B.; Burnham, E. A.; Bruckner, A. P.

    1992-01-01

    High spatial resolution experimental tube wall pressure measurements of ram accelerator gas dynamic phenomena are presented. The projectile resembles the centerbody of a ramjet and travels supersonically through a tube filled with a combustible gaseous mixture, with the tube acting as the outer cowling. Pressure data are recorded as the projectile passes by sensors mounted in the tube wall at various locations along the tube. Data obtained by using a special highly instrumented section of tube has allowed the recording of gas dynamic phenomena with a spatial resolution on the order of one tenth the projectile length. High spatial resolution tube wall pressure data from the three regimes of propulsion studied to date (subdetonative, transdetonative, and superdetonative) are presented and reveal the 3D character of the flowfield induced by projectile fins and the canting of the projectile body relative to the tube wall. Also presented for comparison to the experimental data are calculations made with an inviscid, 3D CFD code.

  11. Chemical forms of selenium present in rat and ram spermatozoa.

    PubMed

    Alabi, N S; Beilstein, M A; Whanger, P D

    2000-08-01

    In vivo and in vitro studies were conducted to investigate the chemical forms by ion-exchange chromatography of selenium (Se) present in rat and ovine spermatozoa. After injection with 75Se-selenite, the form of 75Se in rat sperm was selenocysteine, but selenocysteine and selenomethionine (SeMet) were present in ovine sperm. Presumably, synthesis of SeMet by rumen microbes are responsible for its presence in ovine sperm. In vitro incubation of ram sperm with selenocysteine or SeMet produced no changes, but incubation with selenite produced a compound that eluted one fraction before SeMet from the ion-exchange column. After treatment of this fraction with mercaptoethanol, it eluted in a later fraction upon rechromatography, suggesting it to be selenodicysteine. This compound is apparently formed because of high levels of cysteine in semen. Cysteine, reduced glutathione, and oxidized glutathione were also found in semen. The significance of the results is discussed.

  12. A simple parameterization of aerosol emissions in RAMS

    NASA Astrophysics Data System (ADS)

    Letcher, Theodore

    Throughout the past decade, a high degree of attention has been focused on determining the microphysical impact of anthropogenically enhanced concentrations of Cloud Condensation Nuclei (CCN) on orographic snowfall in the mountains of the western United States. This area has garnered a lot of attention due to the implications this effect may have on local water resource distribution within the Region. Recent advances in computing power and the development of highly advanced microphysical schemes within numerical models have provided an estimation of the sensitivity that orographic snowfall has to changes in atmospheric CCN concentrations. However, what is still lacking is a coupling between these advanced microphysical schemes and a real-world representation of CCN sources. Previously, an attempt to representation the heterogeneous evolution of aerosol was made by coupling three-dimensional aerosol output from the WRF Chemistry model to the Colorado State University (CSU) Regional Atmospheric Modeling System (RAMS) (Ward et al. 2011). The biggest problem associated with this scheme was the computational expense. In fact, the computational expense associated with this scheme was so high, that it was prohibitive for simulations with fine enough resolution to accurately represent microphysical processes. To improve upon this method, a new parameterization for aerosol emission was developed in such a way that it was fully contained within RAMS. Several assumptions went into generating a computationally efficient aerosol emissions parameterization in RAMS. The most notable assumption was the decision to neglect the chemical processes in formed in the formation of Secondary Aerosol (SA), and instead treat SA as primary aerosol via short-term WRF-CHEM simulations. While, SA makes up a substantial portion of the total aerosol burden (much of which is made up of organic material), the representation of this process is highly complex and highly expensive within a numerical

  13. Ram acceleration from a two phase detonative system

    NASA Technical Reports Server (NTRS)

    Cambier, Jean-Luc; Bogdanoff, David W.

    1993-01-01

    A concept for ram acceleration is presented here, which uses a combination of a gas core and a layer of solid explosive or propellant to generate high thrust densities. The concept can be either self-synchronized or externally synchronized, and may be reusable. It has the potential to achieve very high acceleration rates, higher exit velocities and to lower the tube length requirements. Preliminary numerical simulations are presented and discussed, which show the characteristics of the flow fields. Stable conditions can be achieved for low mass loadings of solid explosive, and relatively slow combustion. Accurate knowledge of the thermo-chemical properties and the equations of state of the gas and solid components is essential for further tuning of the concept.

  14. RAM analysis helps cut turbine-generator systems costs

    SciTech Connect

    Cockerill, A.W. ); Lavoie, M. )

    1990-07-01

    Maintenance is effective when it improves equipment availability and reduces costs. Reduced costs stem from increased availability, which is the primary objective of this study. As a result, overall operating costs decrease. RAM analysis requires a logical approach to the problem through the use of techniques such as FMEA, FTA and goal trees. To illustrate the steps of this method, the authors used a simplified T-G system. This method is to rank critical components in terms of the severity of failure. On the basis of ranking, it is possible to assign the preventive maintenance tasks in order of priority. Other options are available. Examples are revised procedures, more detailed outage plans using PC-based programs and better spare parts management.

  15. Finite Memory Model for Haptic Recognition

    DTIC Science & Technology

    1991-12-01

    Slot 4 bu f fer s hort- term storel Slot N Long- ’erm store The model of memory proposed by Atkinson and Shiffrin . Primary memory here is as rehearsal...7 NAVAL POSTGRADUATE SCHOOL Monterey, Califormia AD-A245 342 THESIS Finite Memory Model for Haptic Recognition by Philip G. Beieri December 1991...ELEMEN1 No.) NO. No. ACCESSION NO. I1. TITLE (include Securitn Classification) FINITE MEMORY MODEL FOR HAPTIC RECOGNITION’ 12. PERSONALEAUTHOR(S) Philip

  16. NGC 3312: A victim of ram pressure sweeping

    NASA Technical Reports Server (NTRS)

    Mcmahon, P. M.; Richter, O.-G.; Vangorkom, Jacqueline H.; Ferguson, H. C.

    1990-01-01

    Researchers are undertaking a volume limited survey of the Hydra I cluster in neutral hydrogen using the National Radio Astronomy Observatory's Very Large Array (VLA). The main purpose is to study the effects of a dense environment on the gaseous component of the galaxies. Observational evidence has been accumulating recently that ram pressure sweeping does occur in the centers of clusters, but it is possible that tidal interactions play a role as well. Results of high resolution HI imaging of NGC 3312, the large peculiar spiral near the cluster center are presented. Hydra I (= A1060) is the nearest rich cluster beyond Virgo and, as such, presents a unique opportunity to do a complete survey of a cluster. It is similar to the Virgo cluster in many of its general physical characteristics, such as size, x ray luminosity, velocity dispersion, and galaxy content (high spiral fraction). However, Hydra I appears to be more regular and relaxed. This is evident in the x ray distribution in its central region, which is radially symmetric and centered on the dominant galaxy, NGC 3311, a cD-like elliptical. The observed x ray luminosity implies a central gas density of 4.5 x 10 to the 3rd power cm(-3). Gallagher (1978) argued from optical images of NGC 3312 that this galaxy might be an ideal candidate to directly study effects of the ram pressure process; it might currently be undergoing stripping of its interstellar medium. The researchers' data are consistent with this suggestion, but other origins of the peculiar appearance cannot yet be ruled out.

  17. Ram Pressure Stripping and Morphological Transformation in the Coma Cluster

    NASA Astrophysics Data System (ADS)

    Gregg, Michael; West, Michael

    2017-01-01

    The two largest spiral galaxies in the Coma cluster, NGC4911 and NGC4921, exhibit signs of being vigorously ram-pressure stripped by the hot intracluster medium. HST ACS and WFC3 images have revealed galactic scale shock fronts, giant "Pillars of Creation", rivulets of dust, and spatially coherent star formation in these grand design spirals. All evidence points to these galaxies being stressed by a global external source which can only be the hot intracluster medium (ICM). Inspired by these examples, we have obtained HST WFC3 imaging of five additional large spirals to search for and investigate the effects of ram pressure stripping across the wider Coma cluster. The results are equally spectacular as the first two examples. The geometry of the interactions in some cases allows us to estimate the various time scales involved, including gas flows out of the disk leading to creation of the ICM, and the attendant triggered star formation in the galaxy disks. The global star formation patterns and wholesale tidal stripping of matter yield insights into the spatial and temporal ISM-ICM interactions driving the evolution of galaxies in clusters and ultimately transforming their morphologies from spiral to S0. These processes, much more common in the early Universe, led to the wholesale morphological transformation of Hubble types during the assembly of rich clusters, when the intergalactic populations and hot ICM were first being created and laid down from such stripping and destruction of their member galaxies.We also report on two instrumental aspects of WFC3: 1) using the filter pair F350LP and F600LP to create an extremely broad pseudo Blue-Red color to achieve the greatest observing efficiency with HST, and 2) a WFC3 CCD effect which leads to apparent quantization of background counts, making automatic sky determination challenging when using drizzlepac routines.

  18. Hydrodynamic ram modeling with the immersed boundary method

    SciTech Connect

    Lewis, M.W.; Kashiwa, B.A.; Rauenzahn, R.M.

    1998-03-01

    The authors have modeled a hydrodynamic ram experiment conducted at Wright-Patterson Air Force Base. In the experiment, a projectile traveling at 200 ft/sec impacted and penetrated a simulated airplane wing containing water. The structure consisted of composite panels with stiffeners and rivets, and an aluminum panel. The test included instrumentation to measure strains, accelerations, and pressures. The technique used for modeling this experiment was a multifluid compressible finite volume approach. The solid fields, namely the projectile and the plates which comprised the structure, were represented by a set of discrete, Lagrangian-frame, mass points. These mass points were followed throughout the computation. The contribution of the stress state at each mass point was applied on the grid to determine the stress divergence contribution to the equations of motion and resulting grid based accelerations. This approach has been defined as the immersed boundary method. The immersed boundary method allows the modeling of fluid-structure interaction problems involving material failure. The authors implemented a plate theory to allow the representation of each plate by a surface of mass points. This theory includes bending terms and transverse shear. Arbitrary constitutive models may be used for each plate. Here they describe the immersed boundary method as they have implemented. They then describe the plate theory and its implementation. They discuss the hydrodynamic ram experiment and describe how they modeled it. They compare computed results with test data. They finally conclude with a discussion of benefits and difficulties associated with this modeling approach and possible improvement to it.

  19. NGC 3312: A victim of Ram pressure sweeping

    NASA Astrophysics Data System (ADS)

    McMahon, P. M.; Richter, O.-G.; van Gorkom, Jacqueline H.; Ferguson, H. C.

    1990-07-01

    Researchers are undertaking a volume limited survey of the Hydra I cluster in neutral hydrogen using the National Radio Astronomy Observatory's Very Large Array (VLA). The main purpose is to study the effects of a dense environment on the gaseous component of the galaxies. Observational evidence has been accumulating recently that ram pressure sweeping does occur in the centers of clusters, but it is possible that tidal interactions play a role as well. Results of high resolution HI imaging of NGC 3312, the large peculiar spiral near the cluster center are presented. Hydra I (= A1060) is the nearest rich cluster beyond Virgo and, as such, presents a unique opportunity to do a complete survey of a cluster. It is similar to the Virgo cluster in many of its general physical characteristics, such as size, x ray luminosity, velocity dispersion, and galaxy content (high spiral fraction). However, Hydra I appears to be more regular and relaxed. This is evident in the x ray distribution in its central region, which is radially symmetric and centered on the dominant galaxy, NGC 3311, a cD-like elliptical. The observed x ray luminosity implies a central gas density of 4.5 x 10 to the 3rd power cm(-3). Gallagher (1978) argued from optical images of NGC 3312 that this galaxy might be an ideal candidate to directly study effects of the ram pressure process; it might currently be undergoing stripping of its interstellar medium. The researchers' data are consistent with this suggestion, but other origins of the peculiar appearance cannot yet be ruled out.

  20. Design of a ram accelerator mass launch system

    NASA Technical Reports Server (NTRS)

    Aarnio, Michael; Armerding, Calvin; Berschauer, Andrew; Christofferson, Erik; Clement, Paul; Gohd, Robin; Neely, Bret; Reed, David; Rodriguez, Carlos; Swanstrom, Fredrick

    1988-01-01

    The ram accelerator mass launch system has been proposed to greatly reduce the costs of placing acceleration-insensitive payloads into low earth orbit. The ram accelerator is a chemically propelled, impulsive mass launch system capable of efficiently accelerating relatively large masses from velocities of 0.7 km/sec to 10 km/sec. The principles of propulsion are based on those of a conventional supersonic air-breathing ramjet; however the device operates in a somewhat different manner. The payload carrying vehicle resembles the center-body of the ramjet and accelerates through a stationary tube which acts as the outer cowling. The tube is filled with premixed gaseous fuel and oxidizer mixtures that burn in the vicinity of the vehicle's base, producing a thrust which accelerates the vehicle through the tube. This study examines the requirement for placing a 2000 kg vehicle into a 500 km circular orbit with a minimum amount of on-board rocket propellant for orbital maneuvers. The goal is to achieve a 50 pct payload mass fraction. The proposed design requirements have several self-imposed constraints that define the vehicle and tube configurations. Structural considerations on the vehicle and tube wall dictate an upper acceleration limit of 1000 g's and a tube inside diameter of 1.0 m. In-tube propulsive requirements and vehicle structural constraints result in a vehicle diameter of 0.76 m, a total length of 7.5 m and a nose-cone half angle of 7 degrees. An ablating nose-cone constructed from carbon-carbon composite serves as the thermal protection mechanism for atmospheric transit.