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Sample records for acid alpha-glucosidase gaa

  1. Bioinformatic and biochemical studies point to AAGR-1 as the ortholog of human acid alpha-glucosidase in Caenorhabditis elegans.

    PubMed

    Sikora, Jakub; Urinovská, Jana; Majer, Filip; Poupetová, Helena; Hlavatá, Jitka; Kostrouchová, Marta; Ledvinová, Jana; Hrebícek, Martin

    2010-08-01

    Human acid alpha-glucosidase (GAA, EC 3.2.1.20) is a lysosomal enzyme that belongs to the glycoside hydrolase family 31 (GH31) and catalyses the hydrolysis of alpha-1,4- and alpha-1,6-glucosidic linkages at acid pH. Hereditary deficiency of GAA results in lysosomal glycogen storage disease type II (GSDII, Pompe disease). The aim of this study was to assess GH31 proteins in Caenorhabditis elegans (C. elegans) to identify the ortholog of human GAA. Bioinformatic searches for GAA ortholog in C. elegans genome revealed four acid alpha-glucosidase-related (aagr-1-4) genes. Multiple sequence alignment of AAGRs with other GH31 proteins demonstrated their evolutionary conservation. Phylogenetic analyses suggested clustering of AAGR-1 and -2 with acid-active and AAGR-3 and -4 with neutral-active GH31 enzymes. In order to prove the AAGRs' predicted alpha-glucosidase activity, we performed RNA interference of all four aagr genes. The impact on the alpha-glucosidase activity was evaluated at pH 4.0 (acid) and pH 6.5 (neutral), with or without the inhibitor acarbose. AAGR-1 and -2 expressed acidic alpha-glucosidase activity; on the contrary, AAGR-3 not -4 represented the predominant neutral alpha-glucosidase activity in C. elegans. Similar results were obtained in each of aagr-1 and -4 deletion mutants. Moreover, based on our structural models of AAGRs and these biochemical experiments, we hypothesize that the enzymatic sensitivity of AAGR-2 and human maltase-glucoamylase to the inhibitor acarbose is associated with a tyrosine residue in the GH31 active site, whereas acarbose resistance of AAGR-1 and human GAA is associated with the corresponding tryptophane in the active site. Acid-active AAGR-1 may thus represent the ortholog of human GAA in C. elegans.

  2. Cloning the mouse homologue of the human lysosomal acid {alpha}-glucosidase gene

    SciTech Connect

    Ding, J.H.; Yang, B.Z.; Liu, H.M.

    1994-09-01

    Pompe disease (GSD II) is an autosomal recessive disorder caused by a deficiency of lysosomal acid {alpha}-glucosidase (GAA). In an attempt to create a mouse model for Pompe disease, we isolated and characterized the gene encoding the mouse homologue of the human GAA. Twenty clones that extend from exon 2 to the poly(A) tail were isolated from a mouse liver cDNA library, but the remainder of the mRNA proved difficult to obtain by conventional cDNA library screening. Sequences spanning exons 1-2 were cloned by RACE from mouse liver RNA. The full-length liver GAA cDNA contains 3365 nucleotides with a coding region of 2859 nucleotides and a 394 base pair 3{prime}-nontranslated region. The deduced amino acid sequence of the mouse GAA shows 84% identity to the human GAA. Southern blot analysis demonstrated that the mouse GAA was encoded by a single copy gene. Then six bacteriophages containing DNA from the GAA gene were isolated by screening 10{sup 6} phage plaques of a mouse 129 genomic library using a mouse GAA cDNA as a probe. From one of these bacteriophages, an 11-kilobase EcoRI fragment containing exons 3 to 15 was subcloned and sequenced. Work is in progress using this genomic clone to disrupt the GAA gene in murine embryonic stem cells in order to create GSD II mice.

  3. Enhanced efficacy of an AAV vector encoding chimeric, highly secreted acid alpha-glucosidase in glycogen storage disease type II.

    PubMed

    Sun, Baodong; Zhang, Haoyue; Benjamin, Daniel K; Brown, Talmage; Bird, Andrew; Young, Sarah P; McVie-Wylie, Alison; Chen, Y-T; Koeberl, Dwight D

    2006-12-01

    Glycogen storage disease type II (GSD-II; Pompe disease; MIM 232300) is an inherited muscular dystrophy caused by deficiency in the activity of the lysosomal enzyme acid alpha-glucosidase (GAA). We hypothesized that chimeric GAA containing an alternative signal peptide could increase the secretion of GAA from transduced cells and enhance the receptor-mediated uptake of GAA in striated muscle. The relative secretion of chimeric GAA from transfected 293 cells increased up to 26-fold. Receptor-mediated uptake of secreted, chimeric GAA corrected cultured GSD-II patient cells. High-level hGAA was sustained in the plasma of GSD-II mice for 24 weeks following administration of an AAV2/8 vector encoding chimeric GAA; furthermore, GAA activity was increased and glycogen content was significantly reduced in striated muscle and in the brain. Administration of only 1 x 10(10) vector particles increased GAA activity in the heart and diaphragm for >18 weeks, whereas 3 x 10(10) vector particles increased GAA activity and reduced glycogen content in the heart, diaphragm, and quadriceps. Furthermore, an AAV2/2 vector encoding chimeric GAA produced secreted hGAA for >12 weeks in the majority of treated GSD-II mice. Thus, chimeric, highly secreted GAA enhanced the efficacy of AAV vector-mediated gene therapy in GSD-II mice.

  4. Oral delivery of Acid Alpha Glucosidase epitopes expressed in plant chloroplasts suppresses antibody formation in treatment of Pompe mice

    PubMed Central

    Su, Jin; Sherman, Alexandra; Doerfler, Phillip A.; Byrne, Barry J.; Herzog, Roland W.; Daniell, Henry

    2015-01-01

    Summary Deficiency of acid alpha glucosidase (GAA) causes Pompe disease in which the patients systemically accumulate lysosomal glycogen in muscles and nervous systems, often resulting in infant mortality. Although enzyme replacement therapy (ERT) is effective in treating patients with Pompe disease, formation of antibodies against rhGAA complicates treatment. In this report, we investigated induction of tolerance by oral administration of GAA expressed in chloroplasts. Because full-length GAA could not be expressed, N-terminal 410-amino acids of GAA (as determined by T-cell epitope mapping) were fused with the transmucosal carrier CTB. Tobacco transplastomic lines expressing CTB-GAA were generated through site-specific integration of transgenes into the chloroplast genome. Homoplasmic lines were confirmed by Southern blot analysis. Despite low-level expression of CTB-GAA in chloroplasts, yellow or albino phenotype of transplastomic lines was observed due to binding of GAA to a chloroplast protein that has homology to mannose-6 phosphate receptor. Oral administration of the plant-made CTB-GAA fusion protein even at 330-fold lower dose (1.5 μg) significantly suppressed immunoglobulin formation against GAA in Pompe mice injected with 500 μg rhGAA per dose, with several-fold lower titre of GAA-specific IgG1 and IgG2a. Lyophilization increased CTB-GAA concentration by 30-fold (up to 190 μg per g of freeze-dried leaf material), facilitating long-term storage at room temperature and higher dosage in future investigations. This study provides the first evidence that oral delivery of plant cells is effective in reducing antibody responses in ERT for lysosomal storage disorders facilitating further advances in clinical investigations using plant cell culture system or in vitro propagation. PMID:26053072

  5. [Two new mutations in the gene that codes for acid alpha-glucosidase in an adolescent with late-onset Pompe disease].

    PubMed

    Guevara-Campos, José; Romeo-Villarroel, María A; González-De Guevara, Lucía; Escobar, Víctor

    2013-09-16

    INTRODUCTION. Glycogen storage disease type II, or Pompe disease, is a lysosomal disease with an autosomal recessive pattern of inheritance. Late-onset Pompe disease is a progressive metabolic myopathy caused by decreased activity of the enzyme acid alpha-glucosidase (GAA), which gives rise to reduced degradation and later accumulation of glycogen in the lysosomes and cell cytoplasm. CASE REPORT. A 16-year-old Venezuelan male, diagnosed with late-onset glycogen storage disease type II, or Pompe disease, based on the patient's clinical picture and the biochemical findings. The patient presented unmistakable signs of muscular atrophy in the upper and lower limbs, as well as positive Gowers' sign. Levels of creatinkinase in serum were high. His functional respiratory capacity was diminished. The quantification of the enzymatic activity of acid alpha-glucosidase on filter paper did not show any significant decrease in activity. A molecular genetic analysis revealed the existence of two homozygotic mutations in the gene GAA, c.547-67C>G and c.547-39T>G, both on exon 2 of chromosome 17. According to the human genome database and the review that was undertaken, the changes detected in this patient represent new mutations in the acid alpha-glucosidase gene, GAA. This claim is in agreement with the clinical features and biochemical changes found in the patient. CONCLUSION. A molecular genetic study is mandatory in patients suspected of having this disease.

  6. Packaging of an AAV vector encoding human acid alpha-glucosidase for gene therapy in glycogen storage disease type II with a modified hybrid adenovirus-AAV vector.

    PubMed

    Sun, Baodong; Chen, Y-T; Bird, Andrew; Xu, Fang; Hou, Yang-Xun; Amalfitano, Andrea; Koeberl, Dwight D

    2003-04-01

    We have developed an improved method for packaging adeno-associated virus (AAV) vectors with a replication-defective adenovirus-AAV (Ad-AAV) hybrid virus. The AAV vector encoding human acid alpha-glucosidase (hGAA) was cloned into an E1, polymerase/preterminal protein-deleted adenovirus, such that it is packaged as an Ad vector. Importantly, the Ad-AAV hybrid cannot replicate during AAV vector packaging in 293 cells, because of deletion of polymerase/preterminal protein. The residual Ad-AAV in the AAV vector stock was reduced to <1 infectious particle per 10(10) AAV vector particles. These modifications resulted in approximately 30-fold increased packaging of the AAV vector for the hybrid Ad-AAV vector method as compared with standard transfection-only methods. Similarly improved packaging was demonstrated for pseudotyping the AAV vector as AAV6, and for AAV vector packaging with a second Ad-AAV vector encoding canine glucose-6-phosphatase. Liver-targeted delivery of either the Ad-AAV hybrid or AAV vector particles in acid alpha-glucosidase-knockout (GAA-KO) mice revealed secretion of hGAA with the Ad-AAV vector, and sustained secretion of hGAA with an AAV vector in hGAA-tolerant GAA-KO mice. Further development of hybrid Ad-AAV vectors could offer distinct advantages for gene therapy in glycogen storage diseases.

  7. Evasion of immune responses to introduced human acid alpha-glucosidase by liver-restricted expression in glycogen storage disease type II.

    PubMed

    Franco, Luis M; Sun, Baodong; Yang, Xiaoyi; Bird, Andrew; Zhang, Haoyue; Schneider, Ayn; Brown, Talmage; Young, Sarah P; Clay, Timothy M; Amalfitano, Andrea; Chen, Y T; Koeberl, Dwight D

    2005-11-01

    Glycogen storage disease type II (GSD-II; Pompe disease) is caused by a deficiency of acid alpha-glucosidase (GAA; acid maltase) and manifests as muscle weakness, hypertrophic cardiomyopathy, and respiratory failure. Adeno-associated virus vectors containing either a liver-specific promoter (LSP) (AAV-LSPhGAApA) or a hybrid CB promoter (AAV-CBhGAApA) to drive human GAA expression were pseudotyped as AAV8 and administered to immunocompetent GAA-knockout mice. Secreted hGAA was detectable in plasma between 1 day and 12 weeks postadministration with AAV-LSPhGAApA and only from 1 to 8 days postadministration for AAV-CBGAApA. No anti-GAA antibodies were detected in response to AAV-LSPhGAApA (<1:200), whereas AAV-CBhGAApA provoked an escalating antibody response starting 2 weeks postadministration. The LSP drove approximately 60-fold higher GAA expression than the CB promoter in the liver by 12 weeks following vector administration. Furthermore, the detected cellular immunity was provoked by AAV-CBhGAApA, as detected by ELISpot and CD4+/CD8+ lymphocyte immunodetection. GAA activity was increased to higher than normal and glycogen content was reduced to essentially normal levels in the heart and skeletal muscle following administration of AAV-LSPhGAApA. Therefore, liver-restricted GAA expression with an AAV vector evaded immunity and enhanced efficacy in GSD-II mice.

  8. An isozyme of acid alpha-glucosidase with reduced catalytic activity for glycogen.

    PubMed Central

    Beratis, N G; LaBadie, G U; Hirschhorn, K

    1980-01-01

    Both the common and a variant isozyme of acid alpha-glucosidase have been purified from a heterozygous placenta with CM-Sephadex, ammonium sulfate precipitation, dialysis, Amicon filtration, affinity chromatography by Sephadex G-100, and DEAE-cellulose chromatography. Three and two activity peaks, from the common and variant isozymes, respectively, were obtained by DEAE-cellulose chromatography using a linear NaCl gradient. The three peaks of activity of the common isozyme were eluted with 0.08, 0.12, and 0.17 M NaCl, whereas the two peaks of the variant, with 0.01 and 0.06 M NaCl. The pH optimum and thermal denaturation at 57 degrees C were the same in all enzyme peaks of both isozymes. Rabbit antiacid alpha-glucosidase antibodies produced against the common isozyme were found to cross-react with both peaks of the variant isozyme. The two isozymes shared antigenic identity and had similar Km's with maltose as substrate. Normal substrate saturation kinetics were observed with the common isozyme when glycogen was the substrate, but the variant produced an S-shaped saturation curve indicating a phase of negative and positive cooperativity at low and high glycogen concentrations, respectively. The activity of the variant was only 8.6% and 19.2% of the common isozyme when assayed with nonsaturating and saturating concentrations of glycogen, respectively. A similar rate of hydrolysis of isomaltose by both isozymes was found indicating that the reduced catalytic activity of the variant isozyme toward glycogen is not the result of a reduced ability of this enzyme to cleave the alpha-1,6 linkages of glycogen. Images Fig. 2 Fig. 4 Fig. 6 PMID:6770674

  9. Human acid alpha-glucosidase from rabbit milk has therapeutic effect in mice with glycogen storage disease type II.

    PubMed

    Bijvoet, A G; Van Hirtum, H; Kroos, M A; Van de Kamp, E H; Schoneveld, O; Visser, P; Brakenhoff, J P; Weggeman, M; van Corven, E J; Van der Ploeg, A T; Reuser, A J

    1999-11-01

    Pompe's disease or glycogen storage disease type II (GSDII) belongs to the family of inherited lysosomal storage diseases. The underlying deficiency of acid alpha-glucosidase leads in different degrees of severity to glycogen storage in heart, skeletal and smooth muscle. There is currently no treatment for this fatal disease, but the applicability of enzyme replacement therapy is under investigation. For this purpose, recombinant human acid alpha-glucosidase has been produced on an industrial scale in the milk of transgenic rabbits. In this paper we demonstrate the therapeutic effect of this enzyme in our knockout mouse model of GSDII. Full correction of acid alpha-glucosidase deficiency was obtained in all tissues except brain after a single dose of i.v. enzyme administration. Weekly enzyme infusions over a period of 6 months resulted in degradation of lysosomal glycogen in heart, skeletal and smooth muscle. The tissue morphology improved substantially despite the advanced state of disease at the start of treatment. The results have led to the start of a Phase II clinical trial of enzyme replacement therapy in patients.

  10. Evaluation of Readministration of a Recombinant Adeno-Associated Virus Vector Expressing Acid Alpha-Glucosidase in Pompe Disease: Preclinical to Clinical Planning

    PubMed Central

    Corti, Manuela; Cleaver, Brian; Clément, Nathalie; Conlon, Thomas J.; Faris, Kaitlyn J.; Wang, Gensheng; Benson, Janet; Tarantal, Alice F.; Fuller, Davis; Herzog, Roland W.; Byrne, Barry J.

    2015-01-01

    A recombinant serotype 9 adeno-associated virus (rAAV9) vector carrying a transgene that expresses codon-optimized human acid alpha-glucosidase (hGAA, or GAA) driven by a human desmin (DES) promoter (i.e., rAAV9-DES-hGAA) has been generated as a clinical candidate vector for Pompe disease. The rAAV9-DES-hGAA vector is being developed as a treatment for both early- and late-onset Pompe disease, in which patients lack sufficient lysosomal alpha-glucosidase leading to glycogen accumulation. In young patients, the therapy may need to be readministered after a period of time to maintain therapeutic levels of GAA. Administration of AAV-based gene therapies is commonly associated with the production of neutralizing antibodies that may reduce the effectiveness of the vector, especially if readministration is required. Previous studies have demonstrated the ability of rAAV9-DES-hGAA to correct cardiac and skeletal muscle pathology in Gaa−/− mice, an animal model of Pompe disease. This article describes the IND-enabling preclinical studies supporting the program for a phase I/II clinical trial in adult patients with Pompe. These studies were designed to evaluate the toxicology, biodistribution, and potential for readministration of rAAV9-DES-hGAA injected intramuscularly into the tibialis anterior muscle using an immune modulation strategy developed for this study. In the proposed clinical study, six adult participants with late-onset Pompe disease will be enrolled. The goal of the immune modulation strategy is to ablate B-cells before the initial exposure of the study agent in one leg and the subsequent exposure of the same vector to the contralateral leg four months after initial dosing. The dosing of the active agent is accompanied by a control injection of excipient dosing in the contralateral leg to allow for blinding and randomization of dosing, which may also strengthen the evidence generated from gene therapy studies in the future. Patients will act as their own

  11. Design and screening strategies for alpha-glucosidase inhibitors based on enzymological information.

    PubMed

    Hakamata, Wataru; Kurihara, Masaaki; Okuda, Haruhiro; Nishio, Toshiyuki; Oku, Tadatake

    2009-01-01

    Alpha-glucosidase inhibitors are marketed as therapeutic drugs for diabetes that act through the inhibition of carbohydrate metabolism. Inhibitors of the alpha-glucosidases that are involved in the biosynthesis of N-linked oligosaccharide chains have been reported to have antitumor, antiviral, and apoptosis-inducing activities, and some have been used clinically. alpha-Glucosidase inhibitors have interesting biological activities, and their design, synthesis, and screening are being actively performed. In quite a few reports, however, alpha-glucosidases with different origins than the target alpha-glucosidases, have been used to evaluate inhibitory activities. There might be confusion regarding the naming of alpha-glucosidases. For example, the term alpha-glucosidase is sometimes used as a generic name for alpha-glucoside hydrolases. Moreover, IUBMB recommends the use of "alpha-glucosidase" (EC 3.2.1.20) for exo-alpha-1,4-glucosidases, which are further classified into four families based on amino acid sequence similarities. Accordingly, substrate specificity and susceptibility to inhibitors varies markedly among enzymes in the IUBMB alpha-glucosidases. The design and screening of inhibitors without consideration of these differences is not efficient. For the development of a practical inhibitor that is operational in cells, HTS using the target alpha-glucosidase and the computer-aided design of inhibitors based on enzymatic information concerning the same alpha-glucosidase are essential.

  12. Voglibose: An Alpha Glucosidase Inhibitor

    PubMed Central

    Dabhi, Ajay S.; Bhatt, Nikita R.; Shah, Mohit J.

    2013-01-01

    Diabetes Mellitus (DM) is a morbid disease worldwide, with increasing incidence as time passes. It has macro-vascular and micro-vascular complications. The main cause of these complications is poorly controlled postprandial hyperglycaemia. Alpha glucosidase inhibitors, namely acarbose, voglibose and miglitol, are available for therapy. Voglibose is well tolerated and effective in comparable doses among these drugs. This article highlights the important features of voglibose. PMID:24551718

  13. Screening of late-onset Pompe disease in a sample of Mexican patients with myopathies of unknown etiology: identification of a novel mutation in the acid alpha-glucosidase gene.

    PubMed

    Alcántara-Ortigoza, Miguel Angel; González-del Angel, Ariadna; Barrientos-Ríos, Rehotbevely; Cupples, Courtney; Garrido-García, Luis Martín; de León-Bojorge, Beatríz; Alva-Chaire, Adriana del Carmen

    2010-08-01

    Pompe disease or glycogen-storage disease type 2 (GSD2, OMIM 232300) is an autosomal recessive disorder caused by mutations in the acid alpha-glucosidase gene. Late-onset GSD2 resembles some limb-girdle and Becker muscular dystrophies. The screening of GSD2 through the measurement of acid alpha-glucosidase activity in dried blood spots was applied to a selected sample of 5 Mexican patients with proximal myopathies of unknown etiology. Only 1 male patient showed a low level of acid alpha-glucosidase activity and a compound heterozygote genotype for the c.-32-13T>G splicing mutation present in most white late-onset Pompe disease cases and the novel mutation p.C558S. To our knowledge, this is the first report of a Mexican patient with late-onset GSD2. The identification of c.-32-13T>G in our patient could reflect the genetic contribution of European ancestry to the Mexican population. The enzymatic screening of GSD2 could be justified in patients with myopathies of unknown etiology.

  14. Expression of enzymatically active, recombinant barley alpha-glucosidase in yeast and immunological detection of alpha-glucosidase from seed tissue.

    PubMed

    Tibbot, B K; Henson, C A; Skadsen, R W

    1998-10-01

    An alpha-glucosidase cDNA clone derived from barley aleurone tissue was expressed in Pichia pastoris and Escherichia coli. The gene was fused with the N-terminal region of the Saccharomyces cerevisiae alpha-factor secretory peptide and placed under control of the Pichia AOX1 promoter in the vector pPIC9. Enzymatically active, recombinant alpha-glucosidase was synthesized and secreted from the yeast upon induction with methanol. The enzyme hydrolyzed maltose > trehalose > nigerose > isomaltose. Maltase activity occurred over the pH range 3.5-6.3 with an optimum at pH 4.3, classifying the enzyme as an acid alpha-glucosidase. The enzyme had a Km of 1.88 mM and Vmax of 0.054 micromol/min on maltose. The recombinant alpha-glucosidase expressed in E. coli was used to generate polyclonal antibodies. The antibodies detected 101 and 95 kDa forms of barley alpha-glucosidase early in seed germination. Their levels declined sharply later in germination, as an 81 kDa alpha-glucosidase became prominent. Synthesis of these proteins also occurred in isolated aleurones after treatment with gibberellin, and this was accompanied by a 14-fold increase in alpha-glucosidase enzyme activity.

  15. 2-Aminoresorcinol is a potent alpha-glucosidase inhibitor.

    PubMed

    Gao, Hong; Kawabata, Jun

    2008-01-15

    A series of aminoresorcinols and related compounds were tested for rat intestinal alpha-glucosidase inhibition and these results suggested that the 2-aminoresorcinol moiety of 6-amino-5,7-dihydroxyflavone (2) is important to exert the intestinal alpha-glucosidase inhibitory activity and 2-aminoresorcinol (4), itself, is a potent alpha-glucosidase inhibitor and inhibited sucrose-hydrolyzing activity of rat intestinal alpha-glucosidase uncompetitively.

  16. A novel alpha-glucosidase from the moss Scopelophila cataractae.

    PubMed

    Yamasaki, Yoshiki; Nakashima, Susumu; Konno, Haruyoshi

    2007-01-01

    Scopelophila cataractae is a rare moss that grows on copper-containing soils. S. cataractae protonema was grown on basal MS medium containing copper. A starch-degrading activity was detected in homogenates of the protonema, after successive extraction with phosphate buffer and buffer containing 3 M LiCl. Buffer-soluble extract (BS) and LiCl-soluble extract (LS) readily hydrolyzed amylopectin to liberate only glucose, which shows that alpha-glucosidase (EC 3.2.1.20) in BS and LS hydrolyzed amylopectin. The K(m) value of BS for maltose was 0.427. The K(m) value of BS for malto-oligosaccharide decreased with an increase in the molecular mass of the substrate. The value for maltohexaose was 0.106, which is about four-fold lower than that for maltose. BS was divided into two fractions of alpha-glucosidase (BS-1 and BS-2) by isoelectric focusing. The isoelectric points of these two enzymes were determined to be 4.36 (BS-1) and 5.25 (BS-2) by analytical gel electrofocusing. The two enzymes readily hydrolyzed malto-oligosaccharides. The two enzymes also hydrolyzed amylose, amylopectin and soluble starch at a rate similar to that with maltose. The two enzymes readily hydrolyzed panose to liberate glucose and maltose (1 : 1), and the K(m) value of BS for panose was similar to that for maltotriose, whereas the enzymes hydrolyzed isomaltose only weakly. With regard to substrate specificity, the two enzymes in BS are novel alpha-glucosidases. The two enzymes also hydrolyzed beta-limit dextrin, which has many alpha-1,6-glucosidic linkages near the non-reducing ends, more strongly than maltose, which shows that they do not need a debranching enzyme for starch digestion. The starch-degrading activity of BS was not inhibited by p-chloromercuribenzoic acid or alpha-amylase inhibitor. When amylopectin was treated with BS and LS in phosphate buffer, pH 6.0, glucose, but not glucose-1-phosphate, was detected, showing that the extracts did not contain phosphorylase but did contain an

  17. Enzyme therapy for pompe disease with recombinant human alpha-glucosidase from rabbit milk.

    PubMed

    Van den Hout, J M; Reuser, A J; de Klerk, J B; Arts, W F; Smeitink, J A; Van der Ploeg, A T

    2001-04-01

    Pompe disease is a metabolic myopathy caused by deficiency of lysosomal acid alpha-glucosidase. In this report we review the first 36 weeks of a clinical study on the safety and efficacy of enzyme therapy aimed at correcting the deficiency. Four patients with infantile Pompe disease were enrolled. They received recombinant human alpha-glucosidase from transgenic rabbit milk. The product is generally well tolerated and reaches the primary target tissues. Normalization of alpha-glucosidase activity in skeletal muscle was obtained and degradation of PAS-positive material was seen in tissue sections. The clinical condition of all patients improved. The effect on heart was most significant, with an impressive reduction of the left ventricular mass index (LVMI). Motor function improved. The positive preliminary results stimulate continuation and extension of efforts towards the realization of enzyme therapy for Pompe disease.

  18. The pharmacological chaperone AT2220 increases the specific activity and lysosomal delivery of mutant acid alpha-glucosidase, and promotes glycogen reduction in a transgenic mouse model of Pompe disease.

    PubMed

    Khanna, Richie; Powe, Allan C; Lun, Yi; Soska, Rebecca; Feng, Jessie; Dhulipala, Rohini; Frascella, Michelle; Garcia, Anadina; Pellegrino, Lee J; Xu, Su; Brignol, Nastry; Toth, Matthew J; Do, Hung V; Lockhart, David J; Wustman, Brandon A; Valenzano, Kenneth J

    2014-01-01

    Pompe disease is an inherited lysosomal storage disorder that results from a deficiency in acid α-glucosidase (GAA) activity due to mutations in the GAA gene. Pompe disease is characterized by accumulation of lysosomal glycogen primarily in heart and skeletal muscles, which leads to progressive muscle weakness. We have shown previously that the small molecule pharmacological chaperone AT2220 (1-deoxynojirimycin hydrochloride, duvoglustat hydrochloride) binds and stabilizes wild-type as well as multiple mutant forms of GAA, and can lead to higher cellular levels of GAA. In this study, we examined the effect of AT2220 on mutant GAA, in vitro and in vivo, with a primary focus on the endoplasmic reticulum (ER)-retained P545L mutant form of human GAA (P545L GAA). AT2220 increased the specific activity of P545L GAA toward both natural (glycogen) and artificial substrates in vitro. Incubation with AT2220 also increased the ER export, lysosomal delivery, proteolytic processing, and stability of P545L GAA. In a new transgenic mouse model of Pompe disease that expresses human P545L on a Gaa knockout background (Tg/KO) and is characterized by reduced GAA activity and elevated glycogen levels in disease-relevant tissues, daily oral administration of AT2220 for 4 weeks resulted in significant and dose-dependent increases in mature lysosomal GAA isoforms and GAA activity in heart and skeletal muscles. Importantly, oral administration of AT2220 also resulted in significant glycogen reduction in disease-relevant tissues. Compared to daily administration, less-frequent AT2220 administration, including repeated cycles of 4 or 5 days with AT2220 followed by 3 or 2 days without drug, respectively, resulted in even greater glycogen reductions. Collectively, these data indicate that AT2220 increases the specific activity, trafficking, and lysosomal stability of P545L GAA, leads to increased levels of mature GAA in lysosomes, and promotes glycogen reduction in situ. As such, AT2220 may

  19. Macroalage as a source of alpha-glucosidase inhibitors

    NASA Astrophysics Data System (ADS)

    Li, Xiancui; Niu, Rongli; Fan, Xiao; Han, Lijun; Zhang, Lixin

    2005-09-01

    Alpha-glucosidase inhibitors were screened from organic solvent extracts of macroalgae by a spectrophotometrical method with p-nitrophenyl-D-glucopyranosidase as the substrate. The result indicates that organic crude extracts from some macroalgae such as Rhodomela confervoides (Huds.) Silva, Gracilaria textorii (Suringar) De Toni, Plocamium telfairiae Harv., Dictyopteris divaricata (Okam.) Okam, Ulval pertusa and Enteromorpha intestinalis (L.) Link et al. show strong inhibitory activity of alpha-glucosidase at concentration of 79.6 μg/ml.

  20. Castanospermine inhibits alpha-glucosidase activities and alters glycogen distribution in animals.

    PubMed

    Saul, R; Ghidoni, J J; Molyneux, R J; Elbein, A D

    1985-01-01

    Castanospermine, an inhibitor of alpha-glucosidase activity, was injected into rats to determine its effects in vivo. Daily injections of alkaloid, at levels of 0.5 mg/g of body weight, or higher, for 3 days decreased hepatic alpha-glucosidase to 40% of control values, whereas alpha-glucosidase in brain was reduced to 25% of control values and that in spleen and kidney was reduced to about 40%. In liver, both the neutral (pH 6.5) and the acidic (pH 4.5) alpha-glucosidase activities were inhibited, but the former was more susceptible. On the other hand, beta-N-acetylhexosaminidase activity was elevated in the livers of treated animals, whereas beta-galactosidase activity was unchanged and alpha-mannosidase activity was somewhat inhibited. Livers of treated animals were examined by light and electron microscopy and compared to control animals to determine whether changes in morphology had occurred. In treated animals fed normal rat chow, the hepatocytes were smaller in size and simplified in structure, whereas the high-glucose diet lessened these alterations. Furthermore, in those animals receiving castanospermine at 1.0 mg or higher per g of body weight for 3 days, there was a marked decrease in the amount of glycogen in the cytoplasm, while a large number of lysosomes were observed that were full of dense, granular material. That this dense material was indeed glycogen was shown by the fact that it disappeared when blocks of fixed tissue were pretreated with alpha-amylase. Glycogen levels in liver, as measured either colorimetrically or enzymatically, were somewhat depressed at the higher levels of castanospermine.

  1. alpha-Glucosidase inhibitory activity of Mangifera indica bark.

    PubMed

    Prashanth, D; Amit, A; Samiulla, D S; Asha, M K; Padmaja, R

    2001-08-01

    The ethanolic extracts of Lawsonia inermis leaves, Holarrhena antidysenterica bark, Swertia chirata whole plant and Mangifera indica bark were tested (in-vitro) for alpha-glucosidase inhibitory activity. M. indica extract was found to be the most potent, with an IC(50) value of 314 microg/ml.

  2. Sugar digestion in mosquitoes: identification and characterization of three midgut alpha-glucosidases of the neo-tropical malaria vector Anopheles aquasalis (Diptera: Culicidae).

    PubMed

    Souza-Neto, Jayme A; Machado, Fábio P; Lima, José B; Valle, Denise; Ribolla, Paulo E M

    2007-08-01

    Dietary carbohydrates provide an important source of energy for flight, and contribute to longevity and fecundity of mosquitoes. The most common sugar mosquitoes ingest is sucrose, and digestion of this substance is carried out mainly by alpha-glucosidases. In the current work, we tested the efficiency of sucrose on Anopheles aquasalis female diet. The best longevity (days) was reached when sugar was available in the diet, whereas most only blood fed females were dead 6 days after emergence. Three alpha-glucosidase isoforms were detected in the adult female midgut, named alphaGlu1, alphaGlu2 and alphaGlu3. These are acidic alpha-glucosidases with optima pH around pH 5.5. alphaGlu1 and alphaGlu2 are present in both secreted and membrane-bound forms, whereas alpha-Glu3 only in anchored to membranes. The alpha-glucosidase activity is concentrated mainly in the posterior midgut (70%), both in non-fed or 10% sucrose fed females. The single form of these alpha-glucosidases seemed to be approximately 70 kDa polypeptides, although alphaGlu2 is presented in >or=600 kDa self-aggregates. Km values of alphaGlu1, alphaGlu2 and alphaGlu3 differed significantly from each other, supporting the statement that three alpha-glucosidases are produced in the female midgut. Together, all data suggest that sugar is an essential component of A. aquasalis female diet. In addition, alpha-glucosidases are synthesized in the same place where sucrose is digested and absorbed, the midgut.

  3. Purification and characterization of rice alpha-glucosidase, a key enzyme for alcohol fermentation of rice polish.

    PubMed

    Iwata, Hiroshi; Suzuki, Toshiaki; Aramaki, Isao

    2003-01-01

    Alpha-glucosidase, a key enzyme for nuka-sake brewing, was purified from Oryza sativa cv. Yamadanishiki, which is widely used for sake brewing. The molecular weight of the purified enzyme was 95 kDa. The optimum pH and temperature were 4.5 and 55 degrees C, respectively. The substrate specificity differed from that of Oryza sativa cv. Shinsetsu, which is a variety of rice consumed as a cereal. The extraction of alpha-glucosidase from the rice was stimulated by lactic acid, which suggests that lactic acid plays an important role not only in preventing bacterial contamination, but also in stimulating the parallel fermentation that occurs in nuka-sake brewing.

  4. Phase I/II trial of adeno-associated virus-mediated alpha-glucosidase gene therapy to the diaphragm for chronic respiratory failure in Pompe disease: initial safety and ventilatory outcomes.

    PubMed

    Smith, Barbara K; Collins, Shelley W; Conlon, Thomas J; Mah, Cathryn S; Lawson, Lee Ann; Martin, Anatole D; Fuller, David D; Cleaver, Brian D; Clément, Nathalie; Phillips, Dawn; Islam, Saleem; Dobjia, Nicole; Byrne, Barry J

    2013-06-01

    Pompe disease is an inherited neuromuscular disease caused by deficiency of lysosomal acid alpha-glucosidase (GAA) leading to glycogen accumulation in muscle and motoneurons. Cardiopulmonary failure in infancy leads to early mortality, and GAA enzyme replacement therapy (ERT) results in improved survival, reduction of cardiac hypertrophy, and developmental gains. However, many children have progressive ventilatory insufficiency and need additional support. Preclinical work shows that gene transfer restores phrenic neural activity and corrects ventilatory deficits. Here we present 180-day safety and ventilatory outcomes for five ventilator-dependent children in a phase I/II clinical trial of AAV-mediated GAA gene therapy (rAAV1-hGAA) following intradiaphragmatic delivery. We assessed whether rAAV1-hGAA results in acceptable safety outcomes and detectable functional changes, using general safety measures, immunological studies, and pulmonary functional testing. All subjects required chronic, full-time mechanical ventilation because of respiratory failure that was unresponsive to both ERT and preoperative muscle-conditioning exercises. After receiving a dose of either 1×10(12) vg (n=3) or 5×10(12) vg (n=2) of rAAV1-hGAA, the subjects' unassisted tidal volume was significantly larger (median [interquartile range] 28.8% increase [15.2-35.2], p<0.05). Further, most patients tolerated appreciably longer periods of unassisted breathing (425% increase [103-851], p=0.08). Gene transfer did not improve maximal inspiratory pressure. Expected levels of circulating antibodies and no T-cell-mediated immune responses to the vector (capsids) were observed. One subject demonstrated a slight increase in anti-GAA antibody that was not considered clinically significant. These results indicate that rAAV1-hGAA was safe and may lead to modest improvements in volitional ventilatory performance measures. Evaluation of the next five patients will determine whether earlier intervention can

  5. Isolation and characterization of alpha-glucosidase inhibitor from the fungus Ganoderma lucidum.

    PubMed

    Kim, Shin-Duk; Nho, Hong Joon

    2004-09-01

    An alpha-glucosidase inhibitor, SKG-3, was isolated from the fruiting bodies of Ganoderma lucidum and its physico-chemical properties were characterized. It was a highly specific and effective reversible inhibitor of alpha-glucosidase. It showed very potent inhibitory activity against alpha-glucosidase with an IC50 value of 4.6 micro g/ml, but no activity for any other glycosidases tested. Enzyme activity could be recovered upon dialysis, thus providing evidence for the reversibility of the inhibition. A Lineweaver-Burk plot indicated that the SKG-3 inhibition of alpha-glucosidase was competitive.

  6. Terpenoids with alpha-glucosidase inhibitory activity from the submerged culture of Inonotus obliquus.

    PubMed

    Ying, You-Min; Zhang, Lin-Yan; Zhang, Xia; Bai, Hai-Bo; Liang, Dong-E; Ma, Lie-Feng; Shan, Wei-Guang; Zhan, Zha-Jun

    2014-12-01

    Lanostane-type triterpenoids, inotolactones A and B, a drimane-type sesquiterpenoid, inotolactone C, and five known terpenoids 6β-hydroxy-trans-dihydroconfertifolin, inotodiol, 3β,22-dihydroxyanosta-7,9(11),24-triene, 3β-hydroxycinnamolide, and 17-hydroxy-ent-atisan-19-oic acid, were isolated from the submerged culture of chaga mushroom, Inonotus obliquus. Their structures were characterized by spectroscopic methods, including MS and NMR (1D and 2D) spectroscopic techniques. Inotolactones A and B, examples of lanostane-type triterpenoids bearing α,β-dimethyl, α,β-unsaturated δ-lactone side chains, exhibited more potent alpha-glucosidase inhibitory activities than the positive control acarbose. This finding might be related to the anti-hyperglycemic properties of the fungus and to its popular role as a diabetes treatment. In addition, a drimane-type sesquiterpenoid and an atisane-type diterpenoid were isolated from I. obliquus.

  7. Inhibition of alpha-glucosidase by aqueous extracts of some potent antidiabetic medicinal herbs.

    PubMed

    Onal, Seçil; Timur, Suna; Okutucu, Burcu; Zihnioğlu, Figen

    2005-01-01

    Diabetes mellitus is one of the most prevalant diseases of adults. Agents with alpha-glucosidase inhibitory activity have been useful as oral hypoglycemic drugs for the control of hyperglycemia in patients with type 2; noninsulin-dependent, diabetes mellitus (NIDDM). Investigation of some medicinal herbs: Urtica dioica, Taraxacum officinale, Viscum album, and Myrtus communis with alpha-glucosidase inhibitor activity was conducted to identify a prophylactic effect for diabetes in vitro. All plants showed differing potent alpha-glucosidase inhibitory activity. However, Myrtus communis strongly inhibited the enzyme (IC50 = 38 microg/mL). The inhibitory effect of these plants and some common antidiabetic drugs against the enzyme source (baker's yeast, rabbit liver, and small intestine) were also searched. Approximately all inhibitors used in this study showed quite different inhibitory activities, according to alpha-glucosidase origins. Furthermore, subsequent separation of the active material from Myrtus communis by HPLC showed that only one fraction acted as an a-glucosidase inhibitor.

  8. Synergisms in Alpha-glucosidase Inhibition and Antioxidant Activity of Camellia sinensis L. Kuntze and Eugenia uniflora L. Ethanolic Extracts

    PubMed Central

    Vinholes, Juliana; Vizzotto, Márcia

    2017-01-01

    synergistic effect over alpha-glucosidase and peroxyl radicals.Total phenolic, carotenoids and chlorophylls A and B can be responsible by the observed activities.Extracts could be used as alternative to control postprandial hyperglycemia.Extracts could increase antioxidant defenses to patients with T2DM. Abbreviations Used: T2DM: Type 2 diabetes mellitus; DPPH: 2,2-diphenyl-1-picrylhydrazyl radical; PNPG: 4-Nitrophenyl β-D-glucuronide; LOO: Lipid peroxidation; SEM: Standard error of the mean; CAE: Chlorogenic acid equivalent PMID:28250662

  9. Critical Importance of alpha-glucosidase contained in rice kernel for alcohol fermentation of rice polish.

    PubMed

    Iwata, Hiroshi; Suzuki, Toshiaki; Takahashi, Kazuhide; Aramaki, Isao

    2002-01-01

    In our previous study, we proposed a new alcoholic beverage called nuka-sake, which is made from uncooked rice polish without any enzyme source such as koji. In nuka-sake brewing, the uncooked rice polish serves not only as the fermentation material but also as the enzyme source. In the present study, the results of both laboratory-scale nuka-sake brewing runs with various grades of rice polish and analysis of amylolitic enzyme distribution in rice polish suggested that alpha-glucosidase (EC 3.2.1.20) is a key enzyme of parallel fermentation in nuka-sake brewing. Miglitol, a specific inhibitor of alpha-glucosidase, strongly inhibited glucose production from rice polish. To obtain further evidence regarding the contribution of alpha-glucosidase, this enzyme was purified from rice grain kernels (Yamadanishiki cultivar) and supplied for both rice polish saccharification and nuka-sake brewing. The purified alpha-glucosidase promoted both glucose production from rice polish and alcohol fermentation in nuka-sake brewing. Based on these results, it was considered that the alpha-glucosidase contained in rice polish plays an important role in glucose production. This role may be a rate-limiting factor for parallel fermentation in nuka-sake brewing. Moreover, oligosaccarides accumulated during the saccharification of uncooked rice polish, implying the contribution of not only alpha-glucosidase but also alpha-amylase (EC 3.2.1.1). Through this result, it can be speculated that the starch contained in rice polish will be decomposed to glucose as a result of the action of alpha-glucosidase and alpha-amylase contained in rice polish.

  10. Purification and characterization of a novel fungal alpha-glucosidase from Mortierella alliacea with high starch-hydrolytic activity.

    PubMed

    Tanaka, Yoshio; Aki, Tsunehiro; Hidaka, Yûki; Furuya, Yûji; Kawamoto, Seiji; Shigeta, Seiko; Ono, Kazuhisa; Suzuki, Osamu

    2002-11-01

    The fungal strain Mortierella alliacea YN-15 is an arachidonic acid producer that assimilates soluble starch despite having undetectable alpha-amylase activity. Here, a alpha-glucosidase responsible for the starch hydrolysis was purified from the culture broth through four-step column chromatography. Maltose and other oligosaccharides were less preferentially hydrolyzed and were used as a glucosyl donor for transglucosylation by the enzyme, demonstrating distinct substrate specificity as a fungal alpha-glucosidase. The purified enzyme consisted of two heterosubunits of 61 and 31 kDa that were not linked by a covalent bond but stably aggregated to each other even at a high salt concentration (0.5 M), and behaved like a single 92-kDa component in gel-filtration chromatography. The hydrolytic activity on maltose reached a maximum at 55 degrees C and in a pH range of 5.0-6.0, and in the presence of ethanol, the transglucosylation reaction to form ethyl-alpha-D-glucoside was optimal at pH 5.0 and a temperature range of 45-50 degrees C.

  11. Alpha-glucosidase inhibitory and antiplasmodial properties of terpenoids from the leaves of Buddleja saligna Willd.

    PubMed

    Chukwujekwu, Jude C; Rengasamy, Kannan R R; de Kock, Carmen A; Smith, Peter J; Slavětínská, Lenka Poštová; van Staden, Johannes

    2016-01-01

    In our continuing search for biologically active natural product(s) of plant origin, Buddleja saligna, a South African medicinal plant, was screened in line with its traditional use for antidiabetic (yeast alpha glucosidase inhibitory) and antiplasmodial (against a chloroquine sensitive strain of Plasmodium falciparum (NF54)) activities. The hexane fraction showed the most promising activity with regards to its antidiabetic (IC(50) = 260 ± 0.112 µg/ml) and antiplasmodial (IC(50) = 8.5 ± 1.6 µg/ml) activities. Using activity guided fractionation three known terpenoids (betulonic acid, betulone and spinasterol) were isolated from this species for the first time. The compounds displayed varying levels of biological activities (antidiabetic: 27.31 µg/ml ≥ IC(50) ≥ 5.6 µg/ml; antiplasmodial: 14 µg/ml ≥ IC(50) ≥ 2 µg/ml) with very minimal toxicity.

  12. Unexpected high digestion rate of cooked starch by the Ct-Maltase-Glucoamylase small intestine mucosal alpha-glucosidase subunit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    For starch digestion to glucose, two luminal alpha-amylases and four gut mucosal alpha-glucosidase subunits are employed. The aim of this research was to investigate, for the first time, direct digestion capability of individual mucosal alpha-glucosidases on cooked (gelatinized) starch. Gelatinized ...

  13. Potential antiradical and alpha-glucosidase inhibitors from Ecklonia maxima (Osbeck) Papenfuss.

    PubMed

    Rengasamy, Kannan R R; Aderogba, Mutalib A; Amoo, Stephen O; Stirk, Wendy A; Van Staden, Johannes

    2013-11-15

    Alpha-glucosidase inhibitors play a potential role in the treatment of type 2 diabetes by delaying glucose absorption in the small intestine. Ecklonia maxima, a brown alga which grows abundantly on the west coast of South Africa, is used to produce alginate, animal feed, nutritional supplements and fertilizer. The crude aqueous methanol extract, four solvent fractions and three phlorotannins: 1,3,5-trihydroxybenezene (phloroglucinol) (1), dibenzo [1,4] dioxine-2,4,7,9-tetraol (2) and hexahydroxyphenoxydibenzo [1,4] dioxine (eckol) (3) isolated from E. maxima were evaluated for antiradical and alpha-glucosidase inhibitory activities. All the phlorotannins tested had strong antioxidant activities on DPPH free radicals with EC50 values ranging from 0.008 to 0.128μM. Compounds 2 and 3 demonstrated stronger antioxidant activity and an alpha-glucosidase inhibitory property than positive controls. These results suggest that E. maxima could be a natural source of potent antioxidants and alpha-glucosidase inhibitors. This study could facilitate effective utilization of E. maxima as an oral antidiabetic drug or functional food ingredient with a promising role in the formulation of medicines and nutrition supplements.

  14. Lysosomal alpha-glucosidase: cell-specific processing and altered maturation in HT-29 colon cancer cells.

    PubMed Central

    Francí, C; Egea, G; Arribas, R; Reuser, A J; Real, F X

    1996-01-01

    We have previously described the abnormal localization of resident Golgi proteins and O-glycans in the rough endoplasmic reticulum of mucin-secreting HT-29 M6 colon cancer cells, suggesting altered protein trafficking in these cells [Egea, Francí, Gambús, Lesuffleur, Zweibaum and Real (1993) J. Cell Sci. 105, 819-830]. In the present work, we have chosen lysosomal alpha-glucosidase as a reporter to examine the intracellular traffic of glycoproteins in M6 cells. We have compared the synthesis and processing of alpha-glucosidase in mucin-secreting M6 cells and in Caco-2 colon cancer cells, the latter resembling normal absorptive intestinal epithelium. Our results show that alpha-glucosidase processing and secretion is markedly delayed in M6 cells as compared to Caco-2 cells or normal fibroblasts, and this delay is caused by an accumulation of alpha-glucosidase precursor form in the trans-Golgi network. Furthermore, treatment in Caco-2 cells with brefeldin A led to changes in alpha-glucosidase maturation similar to those observed in untreated M6 cells. To determine whether altered processing occurs in other cultured cells, a panel of cancer cell lines and cultures from normal exocrine pancreas were examined. In pancreas-derived cultures, alpha-glucosidase showed a processing pattern different from that described until now. Only HT-29 cells and HT-29-derived subpopulations displayed a defect in alpha-glucosidase maturation. In conclusion, alpha-glucosidase processing is more diverse than has previously been described; this finding may have tissue-specific functional implications. PMID:8660303

  15. Purunusides A-C, alpha-glucosidase inhibitory homoisoflavone glucosides from Prunus domestica.

    PubMed

    Kosar, Shaheen; Fatima, Itrat; Mahmood, Azhar; Ahmed, Rehana; Malik, Abdul; Talib, Sumaira; Chouhdary, Muhammad Iqbal

    2009-12-01

    Purunusides A-C (1-3), new homoisoflavone glucosides together with the known compounds beta-sitosterol (4) and 6,7-methylenedioxy-8-methoxycoumarin (5) have been isolated from n-butanol and ethyl acetate soluble fractions of Prunus domestica. Their structures were assigned on the basis of spectral studies. The compounds 1-3 showed potent inhibitory activity against the enzyme alpha-glucosidase.

  16. The Role of Pea Chloroplast [alpha]-Glucosidase in Transitory Starch Degradation.

    PubMed

    Sun, Z.; Duke, S. H.; Henson, C. A.

    1995-05-01

    Pea chloroplastic [alpha]-glucosidase (EC 3.2.1.20) involved in transitory starch degradation was purified to apparent homogeneity by ion exchange, reactive dye, hydroxylapatite, hydrophobic interaction, and gel filtration column chromatography. The native molecular mass and the subunit molecular mass were about 49.1 and 24.4 kD, respectively, suggesting that the enzyme is a homodimer. The enzyme had a Km of 7.18 mM for maltose. The enzyme's maximal activity at pH 7.0 and stability at pH 6.5 are compatible with the diurnal oscillations of the chloroplastic stromal pH and transitory starch accumulation. This pH modulation of the [alpha]-glucosidase's activity and stability is the only mechanism known to regulate starch degradative enzymes in leaves. Although the enzyme was specific for the [alpha]-D-glucose in the nonreducing end as the glycon, the aglycon moieties could be composed of a variety of groups. However, the hydrolysis rate was greatly influenced by the aglycon residues. Also, the enzyme could hydrolyze glucans in which carbon 1 of the glycon was linked to different carbon positions of the penultimate glucose residue. The ability of the [alpha]-glucosidase to hydrolyze [alpha]-1,2- and [alpha]-1,3-glucosidic bonds may be vital if these bonds exist in starch granules because they would be barriers to other starch degradative enzymes. This purified pea chloroplastic [alpha]-glucosidase was demonstrated to initiate attacks on native transitory chloroplastic starch granules.

  17. Molecular characterization of the alpha-glucosidase activity in Enterobacter sakazakii reveals the presence of a putative gene cluster for palatinose metabolism.

    PubMed

    Lehner, Angelika; Riedel, Kathrin; Rattei, Thomas; Ruepp, Andreas; Frishman, Dimitrij; Breeuwer, Pieter; Diep, Benjamin; Eberl, Leo; Stephan, Roger

    2006-12-01

    Enterobacter sakazakii is considered an opportunistic pathogen for premature infants and neonates. Although E. sakazakii has been isolated from various types of food, recontaminated dried infant formula has been epidemiologically identified as the major source of infection. Amongst others, alpha-glucosidase activity is one of the most important biochemical features, which differentiates E. sakazakii from other species in the family Enterobacteriaceae and has therefore been used as a selective marker in the development of differential media. However, it has been shown, that methods based on this biochemical feature are prone to producing false-positive results for presumptive E. sakazakii colonies due to the presence of this enzymatic activity in other species of the Enterobacteriaceae. Therefore, elucidation of the molecular basis responsible for the biochemical feature in E. sakazakii would provide novel targets suitable for the development of more specific and direct identification systems for this organism. By applying the bacterial artificial chromosome (BAC) approach, along with heterologous gene expression in Escherichia coli, the molecular basis of the alpha-glucosidase activity in E. sakazakii was characterized. Here we report the identification of two different alpha-glucosidase encoding genes. Homology searches of the deduced amino acid sequences revealed that the proteins belong to a cluster of gene products putatively responsible for the metabolism of isomaltulose (palatinose; 6-O-alpha-d-glucopyranosyl-d-fructose). The glycosyl-hydrolyzing activity of each protein was demonstrated by subcloning the respective open reading frames and screening of E. coli transformants for their ability to hydrolyze 4-methyl-umbelliferyl-alpha-d-glucoside. Analysis at the protein level revealed that both enzymes belong to the intracellular fraction of cell proteins. The presence of the postulated palatinose metabolism was proven by growth experiments using this sugar as

  18. Oligomeric procyanidins of French maritime pine bark extract (Pycnogenol) effectively inhibit alpha-glucosidase.

    PubMed

    Schäfer, Angelika; Högger, Petra

    2007-07-01

    The standardized maritime pine bark extract (Pycnogenol) was reported to exert clinical anti-diabetic effects after peroral intake. However, an increased insulin secretion was not observed after administration of the extract to patients. Our aim was to elucidate whether the described clinical effects of Pycnogenol are related to inhibition of alpha-glucosidase. Therefore, we analyzed the inhibitory activity of Pycnogenol, green tea extract and acarbose towards alpha-glucosidase. Furthermore, we explored different fractions of Pycnogenol containing compounds of diverse molecular masses from polyphenolic monomers, dimers and higher oligomers to uncover which components exhibited the most pronounced inhibitory activity. We found that Pycnogenol exhibited the most potent inhibition (IC(50) about 5 microg/mL) on alpha-glucosidase compared to green tea extract (IC(50) about 20 microg/mL) and acarbose (IC(50) about 1mg/mL). The inhibitory action of Pycnogenol was stronger in extract fractions containing higher procyanidin oligomers. The results obtained assign a novel, local effect to oligomeric procyanidins and contribute to the explanation of glucose-lowering effects of Pycnogenol observed in clinical trials with diabetic patients.

  19. Novel {alpha}-glucosidase from human gut microbiome : substrate specificities and their switch.

    SciTech Connect

    Tan, K.; Tesar, C.; Wilton, R.; Keigher, L.; Babnigg, G.; Joachimiak, A.; Biosciences Division

    2010-01-01

    The human intestine harbors a large number of microbes forming a complex microbial community that greatly affects the physiology and pathology of the host. In the human gut microbiome, the enrichment in certain protein gene families appears to be widespread. They include enzymes involved in carbohydrate metabolism such as glucoside hydrolases of dietary polysaccharides and glycoconjugates. We report the crystal structures (wild type, 2 mutants, and a mutant/substrate complex) and the enzymatic activity of a recombinant {alpha}-glucosidase from human gut bacterium Ruminococcus obeum. The first ever protein structures from this bacterium reveal a structural homologue to human intestinal maltase-glucoamylase with a highly conserved catalytic domain and reduced auxiliary domains. The {alpha}-glucosidase, a member of GH31 family, shows substrate preference for {alpha}(1-6) over {alpha}(1-4) glycosidic linkages and produces glucose from isomaltose as well as maltose. The preference can be switched by a single mutation at its active site, suggestive of widespread adaptation to utilization of a variety of polysaccharides by intestinal micro-organisms as energy resources. Novel {alpha}-glucosidase from human gut microbiome: substrate specificities and their switch.

  20. Screening alpha-glucosidase and alpha-amylase inhibitors from natural compounds by molecular docking in silico.

    PubMed

    Jhong, Chien-Hung; Riyaphan, Jirawat; Lin, Shih-Hung; Chia, Yi-Chen; Weng, Ching-Feng

    2015-01-01

    The alpha-glucosidase inhibitor is a common oral anti-diabetic drug used for controlling carbohydrates normally converted into simple sugars and absorbed by the intestines. However, some adverse clinical effects have been observed. The present study seeks an alternative drug that can regulate the hyperglycemia by down-regulating alpha-glucosidase and alpha-amylase activity by molecular docking approach to screen the hyperglycemia antagonist against alpha-glucosidase and alpha-amylase activities from the 47 natural compounds. The docking data showed that Curcumin, 16-hydroxy-cleroda-3,13-dine-16,15-olide (16-H), Docosanol, Tetracosanol, Antroquinonol, Berberine, Catechin, Quercetin, Actinodaphnine, and Rutin from 47 natural compounds had binding ability towards alpha-amylase and alpha-glucosidase as well. Curcumin had a better biding ability of alpha-amylase than the other natural compounds. Analyzed alpha-glucosidase activity reveals natural compound inhibitors (below 0.5 mM) are Curcumin, Actinodaphnine, 16-H, Quercetin, Berberine, and Catechin when compared to the commercial drug Acarbose (3 mM). A natural compound with alpha-amylase inhibitors (below 0.5 mM) includes Curcumin, Berberine, Docosanol, 16-H, Actinodaphnine/Tetracosanol, Catechin, and Quercetin when compared to Acarbose (1 mM). When taken together, the implication is that molecular docking is a fast and effective way to screen alpha-glucosidase and alpha-amylase inhibitors as lead compounds of natural sources isolated from medicinal plants.

  1. alpha-Glucosidase inhibition of 6-hydroxyflavones. Part 3: Synthesis and evaluation of 2,3,4-trihydroxybenzoyl-containing flavonoid analogs and 6-aminoflavones as alpha-glucosidase inhibitors.

    PubMed

    Gao, Hong; Kawabata, Jun

    2005-03-01

    The SAR studies suggested that the C-ring of baicalein (1) was not necessary for the activity, and validated the importance of 2,3,4-trihydroxybenzoyl structure of 1. Thus, a series of 2,3,4-trihydroxybenzoyl-containing flavonoid analogs were investigated for the alpha-glucosidase inhibitory activity. The results indicated that 5,6,7-trihydroxy-2-phenyl-4-quinolone (2) and 5,6,7-trihydroxyflavanone (4) showed the comparable activity to 1, while 3,5,6,7-tetrahydroxyflavone (7), 5,6,7-trihydroxyisoflavone (8), and 6-hydroxygenistein (9) showed moderate alpha-glucosidase inhibitory activity. In addition, it was found that 6-amino-5,7-dihydroxyflavone (16) was a more potent and specific rat intestinal alpha-glucosidase inhibitor than 1, and showed the comparable activity to acarbose. This is the first report on mammalian intestinal alpha-glucosidase inhibitory activity of 6-aminoflavones. Kinetic studies revealed that 16 inhibited both sucrose- and maltose-hydrolyzing activities of rat intestinal alpha-glucosidase uncompetitively.

  2. Effect of the alpha-glucosidase inhibitor, bromoconduritol, on carbohydrate metabolism in the silverleaf whitefly, Bemisia argentifolii.

    PubMed

    Salvucci, M

    2000-11-01

    The involvement of alpha-glucosidase in the partitioning of ingested sucrose between excretion and incorporation was investigated in the silverleaf whitefly (Bemisia argentifolii). Approximately half of the alpha-glucosidase activity in adult whiteflies was soluble and the remainder was associated with membranes. In contrast, almost all of the trehalulose synthase was membrane-associated. Isoelectric focusing revealed that soluble and membrane-associated alpha-glucosidases were each composed of several isozymes in the pH 5 to 6.5 range, but the distribution of activity among the various isozymes was different. Bromoconduritol, an inhibitor of glucosidases, inhibited trehalulose synthase and alpha-glucosidase activities in whitefly extracts. Inhibition was greatest when bromoconduritol was incubated with extracts prior to the addition of sucrose, consistent with the irreversible nature of this inhibitor. Addition of bromoconduritol to artificial diets decreased the extractable trehalulose synthase and alpha-glucosidase activities by about 30 and 50%, respectively. Ingestion of bromoconduritol reduced the amount of carbohydrate excreted by about 80% without changing the distribution of the major honeydew sugars or causing an increase in the proportion of sucrose that was excreted. Ingestion of bromoconduritol did not affect respiration, the content and distribution of soluble carbohydrates in whitefly bodies, or the conversion of labeled sucrose into glucose, trehalose and isobemisiose. The results indicate that partitioning of ingested carbon between excretion and metabolism in whiteflies is highly regulated, probably involving multiple forms of alpha-glucosidase that facilitate a separation of the processes involved in the metabolic utilization of sucrose from those involved in excretion of excess carbohydrate. Arch. Insect Biochem. Physiol. 45:117-128, 2000. Published 2001 Wiley-Liss, Inc.

  3. An alpha-glucosidase inhibitor from an endophytic Cladosporium sp. with potential as a biocontrol agent.

    PubMed

    Singh, Bahaderjeet; Kaur, Tamanreet; Kaur, Sanehdeep; Manhas, Rajesh K; Kaur, Amarjeet

    2015-02-01

    This study highlights the importance of alpha-glucosidase inhibitors as mechanisms for endophyte-mediated resistance to insect pests. One of the major benefits which endophytes confer on plants is providing resistance against insect pests. This built-in defense mechanism of the plant can be used for exploring ecofriendly strategies for pest control. In the present study, 34 endophytic fungi were isolated from Tinospora cordifolia and screened for their ability to produce alpha-glucosidase inhibitors. Maximum inhibitory activity was observed in an isolate from T. cordifolia (TN-9S), identified to be Cladosporium sp. The inhibitor was purified using chromatographic techniques. The insecticidal activity of the purified inhibitor was evaluated against Spodoptera litura. The inhibitor induced a significant mortality in the larvae of S. litura and adversely affected its survival and development. It also inhibited the activity of α-glycosidases in vivo in the gut of the larvae. The purified inhibitor was determined to be a phenolic compound with amine groups, demonstrating a noncompetitive type of inhibition in vitro. The production of the inhibitor was optimized. Response surface methodology (RSM) analysis revealed a significant interaction between dextrose and malt extract, with first-order effect of pH.

  4. alpha-Glucosidase-albumin conjugates: effect of chronic administration in mice

    SciTech Connect

    Allen, T.M.; Murray, L.; Bhardwaj, D.; Poznansky, M.J.

    1985-07-01

    Enzyme albumin conjugates have been proposed as a means of increasing the efficacy of enzyme use in vivo and decreasing immune response to the enzyme. Particulate drug carriers, however, have a pronounced tendency to localize in the mononuclear phagocyte (reticuloendothelial) system. The authors have examined in mice the effect on phagocytic index, tissue distribution and organ size of continued administration of conjugates of alpha-glucosidase with either homologous or heterologous albumin. Mice received 10 X 2-mg injections of bovine serum albumin (BSA) or mouse serum albumin (MSA), either free, polymerized or conjugated with alpha-glucosidase. Experiments involving BSA had to be terminated before the end of the experiment because of anaphylaxis, but these reactions were less severe to the polymerized albumin than to free albumin. Free BSA, BSA polymer and BSA-enzyme conjugates all caused a decrease in phagocytic index after six injections. Mice receiving MSA showed no evidence of anaphylaxis, but mice receiving six or more injections of free MSA, MSA polymer or MSA-enzyme conjugate had significantly decreased phagocytic indices as compared to controls. Phagocytic indices had returned to normal by 7 days after the final injection. Tissue distribution of /sup 125/I-labeled albumin preparations was determined in either naive or chronically injected mice.

  5. Effects of alpha-glucosidase inhibitors on mouth to caecum transit time in humans.

    PubMed

    Ladas, S D; Frydas, A; Papadopoulos, A; Raptis, S A

    1992-09-01

    The alpha-glucosidase inhibitors acarbose and miglitol have been successfully used to control postprandial hyperglycaemia in diabetics. They probably work by slowing carbohydrate digestion and absorption, but their effect on mouth to caecum transit time has not been studied. The effect acarbose (100 mg), miglitol (100 mg), and placebo on mouth to caecum transit time (380 kcal breakfast with 20 g of lactulose) was investigated in 18 normal volunteers using breath hydrogen analysis. Both miglitol and acarbose significantly increased breath hydrogen excretion (F2,34 = 6.31, p = 0.005) and shortened the mouth to caecum transit time (F2,34 = 3.49, p = 0.04) after breakfast compared with placebo. There was a significant negative correlation between breath hydrogen excretion and mouth to caecum transit time suggesting that with shorter transit times significantly more carbohydrates were spilled into the colon. These results indicate that alpha-glucosidase inhibitors accelerate mouth to caecum transit time by inducing carbohydrate malabsorption.

  6. Alpha-glucosidase inhibitory activity of Syzygium cumini (Linn.) Skeels seed kernel in vitro and in Goto-Kakizaki (GK) rats.

    PubMed

    Shinde, Jayantrao; Taldone, Tony; Barletta, Michael; Kunaparaju, Naveen; Hu, Bo; Kumar, Sunil; Placido, Jessica; Zito, S William

    2008-05-19

    Syzygium cumini seed kernel extracts were evaluated for the inhibition of alpha-glucosidase from mammalian (rat intestine), bacterial (Bacillus stearothermophilus), and yeast (Saccharomyces cerevisiae, baker's yeast). In vitro studies using the mammalian alpha-glucosidase from rat intestine showed the extracts to be more effective in inhibiting maltase when compared to the acarbose control. Since acarbose is inactive against both the bacterial and the yeast enzymes, the extracts were compared to 1-deoxynojirimycin. We found all extracts to be more potent against alpha-glucosidase derived from B. stearothermophilus than that against the enzymes from either baker's yeast or rat intestine. In an in vivo study using Goto-Kakizaki (GK) rats, the acetone extract was found to be a potent inhibitor of alpha-glucosidase hydrolysis of maltose when compared to untreated control animals. Therefore, these results point to the inhibition of alpha-glucosidase as a possible mechanism by which this herb acts as an anti-diabetic agent.

  7. Modulation of starch digestion for slow glucose release through "toggling" of activities of mucosal "alpha"-glucosidases

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Starch digestion involves the breakdown by alpha-amylase to small linear and branched malto-oligosaccharides, which are in turn hydrolyzed to glucose by the mucosal alpha-glucosidases, maltase-glucoamylase (MGAM) and sucrase-isomaltase (SI). MGAM and SI are anchored to the small intestinal brush-bor...

  8. AGI, a previously unreported D. melanogaster {alpha}-glucosidase: Partial purification, characterization, and cytogenetic mapping

    SciTech Connect

    Parker, G.F.; Roberts, D.B.

    1996-04-01

    Inbred Drosophila melanogaster stocks were surveyed for {alpha}-glucosidases with nondenaturing gel electrophoresis using a fluorogenic substrate to stain the gels. The glucosidase most active under these conditions is polymorphic. We established that the polymorphism is genetic in origin and that the glucosidase was not likely to be a previously characterized enzyme. The gene encoding the enzyme was mapped cytogenetically to 33 A1-2- 33A8-B1, confirming that this is an enzyme not yet reported in D. melanogaster. The enzyme was partially purified by elution from nondenaturing gels, which enable us to establish that it has optimal activity at pH 6 and interacts most strongly with {alpha}- 1 -4 glucosides. A developmental and tissue survey suggested that this enzyme could have a purely digestive role or be involved in carbohydrate metabolism inside the organism. We propose that this enzyme is involved in either starch digestion or glycogen metabolism. 37 refs., 6 figs., 1 tab.

  9. Inhibitory Properties of Aqueous Ethanol Extracts of Propolis on Alpha-Glucosidase

    PubMed Central

    Zhang, Hongcheng; Wang, Guangxin; Beta, Trust; Dong, Jie

    2015-01-01

    The objective of the present study was to evaluate the inhibitory properties of various extracts of propolis on alpha-glucosidase from baker's yeast and mammalian intestine. Inhibitory activities of aqueous ethanol extracts of propolis were determined by using 4-nitrophenyl-D-glucopyranoside, sucrose and maltose as substrates, and acarbose as a positive reference. All extracts were significantly effective in inhibiting α-glucosidase from baker's yeast and rat intestinal sucrase in comparison with acarbose (P < 0.05). The 75% ethanol extracts of propolis (75% EEP) showed the highest inhibitory effect on α-glucosidase and sucrase and were a noncompetitive inhibition mode. 50% EEP, 95%, EEP and 100% EEP exhibited a mixed inhibition mode, while water extracts of propolis (WEP) and 25% EEP demonstrated a competitive inhibition mode. Furthermore, WEP presented the highest inhibitory activity against maltase. These results suggest that aqueous ethanol extracts of propolis may be used as nutraceuticals for the regulation of postprandial hyperglycemia. PMID:25767553

  10. Bacillus thermoamyloliquefaciens KP1071 alpha-glucosidase II is a thermostable M(r) 540,000 homohexameric alpha-glucosidase with both exo-alpha-1,4-glucosidase and oligo-1,6-glucosidase activities.

    PubMed

    Suzuki, Y; Nobiki, M; Matsuda, M; Sawai, T

    1997-04-01

    alpha-Glucosidase II of the facultative thermophile Bacillus thermoamyloliquefaciens KP1071 (FERM-P8477; growth over 30-66 degrees C) was purified to a homogeneous state. Its M(r) was estimated as 90000 by SDS/PAGE. However, the enzyme behaved as an active Mr 540000 protein on gel filtration with each of two gels of different matrices as well as on gel electrophoresis under native conditions. The enzyme was not glycosylated. Its isoelectric point was estimated as 5.7. The N-terminal sequence of 20 residues was determined asAla1-Ile-Gln-Pro-Glu-Gln-Asp-Asp-Lys-Thr-Gln-Glu-Asp-Gly- Tyr-Ile-Asp-Ile-Gly-Asn20. The sequence did not resemble those of procaryotic and eucaryotic proteins hitherto reported including the monomeric exo-alpha-1,4-glucosidase and the monomeric oligo-1,6-glucosidase from the same microorganism. The alpha-glucosidase II had no antigenic group shared with the latter two enzymes. Analysis of substrate specificity showed that the alpha-glucosidase II has dual activity towards oligo-1,6-glucosidases and exo-alpha-1,4-glucosidases, but its preference is for non-reducing terminal alpha-1,4 glucosidic bonds in substrates. Kinetic studies proved that both activities are attributed to the same catalytic site. The enzyme was most active at 81 degrees C and pH 7.0. Its half-life at pH 6.8 was 10 min at 81 degrees C, and 5 h at 55 degrees C in 6.4 M urea, 26% ethanol or 2.5% SDS. We suggest that the alpha-glucosidase II is a thermostable, homohexameric enzyme of origin distinct from the exo-alpha-1,4-glucosidase and the oligo-1,6-glucosidase present in the same strain.

  11. Inhibitory effects of hyssop (Hyssopus officinalis) extracts on intestinal alpha-glucosidase activity and postprandial hyperglycemia.

    PubMed

    Miyazaki, Hiroyuki; Matsuura, Hideyuki; Yanagiya, Chikako; Mizutani, Junya; Tsuji, Masayoshi; Ishihara, Chiaki

    2003-10-01

    It has been known that Hyssopus officinalis (hyssop) is a herb that grows in the wild and is a source of natural antioxidants. We previously reported that a-glucosidase inhibitors, (2S, 3S)1-O-beta-D-6'-O-cinnamoylglucopyranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol and (2S, 3S)1-O-beta-D-glucopranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol, from the dry leaves of hyssop, were isolated. This study examined the alpha-glucosidase inhibitory effects of hyssop extracts on intestinal carbohydrate absorption in rat everted gut sac and carbohydrate-loaded hyperglycemia in mice. In the everted gut sac experiment, 10 mM sucrose- and 5 mM maltose-treated increases in glucose concentration in the serosal compartment were inhibited in the presence of 0.5 and 1.0 mg/ mL hyssop extracts, although a 10 mM glucose-induced increase in serosal glucose was not inhibited by the extracts. Additionally, hyperglycemia in sucrose- and maltose-loaded mice was significantly suppressed at an early stage, within 30 to 60 min by oral pre-administration of 300 and 100 mg/kg hyssop extracts, respectively. These findings suggest that hyssop extracts inhibited the digestion of complex carbohydrates, but not that of absorbable monosaccharide, and might be a useful supplemental food for hyperglycemia.

  12. Purification and characterization of an alpha-glucosidase from germinating millet seeds.

    PubMed

    Yamasaki, Yoshiki; Fujimoto, Mikio; Kariya, Junji; Konno, Haruyoshi

    2005-04-01

    An alpha-glucosidase (alpha-D-glucoside glucohydrolase, EC 3.2.1.20) was isolated from germinating millet (Panicum miliaceum L.) seeds by a procedure that included ammonium sulfate fractionation, chromatography on CM-cellulofine/Fractogel EMD SO(3), Sephacryl S-200 HR and TSK gel Phenyl-5 PW, and preparative isoelectric focusing. The enzyme was homogenous by SDS-PAGE. The molecular weight of the enzyme was estimated to be 86,000 based on its mobility in SDS-PAGE and 80,000 based on gel filtration with TSKgel super SW 3000, which showed that it was composed of a single unit. The isoelectric point of the enzyme was 8.3. The enzyme readily hydrolyzed maltose, malto-oligosaccharides, and alpha-1,4-glucan, but hydrolyzed polysaccharides more rapidly than maltose. The K(m) value decreased with an increase in the molecular weight of the substrate. The value for maltoheptaose was about 4-fold lower than that for maltose. The enzyme preferably hydrolyzed amylopectin in starch, but also readily hydrolyzed nigerose, which has an alpha-1,3-glucosidic linkage and exists as an abnormal linkage in the structure of starch. In particular, the enzyme readily hydrolyzed millet starch from germinating seeds that had been degraded to some extent.

  13. Expression of alpha subunit of alpha glucosidase II in adult mouse brain regions and selective organs

    PubMed Central

    Anji, Antje; Miller, Hayley; Raman, Chandrasekar; Phillips, Mathew; Ciment, Gary; Kumari, Meena

    2014-01-01

    Alpha glucosidase II (GII), a resident of endoplasmic reticulum (ER) and an important enzyme in folding of nascent glycoproteins, is heterodimeric consisting of alpha (GIIα) and beta (GIIβ) subunits. The catalytic GIIα subunit with the help of mannose 6-phosphate receptor homology (MRH) domain of GIIβ sequentially hydrolyzes two α-1-3-linked glucose residues in the 2nd step of N-linked oligosaccharide-mediated protein folding. The soluble GIIα subunit is retained in the ER through its interaction with the HDEL-containing GIIβ subunit. N-glycosylation and correct protein folding is crucial for protein stability, trafficking, and cell surface expression of several proteins in the brain. Alterations in N-glycosylation lead to abnormalities in neuronal migration and mental retardation, various neurodegenerative diseases, and invasion of malignant gliomas. Inhibitors of GII are used to inhibit cell proliferation and migration in a variety of different pathologies such as viral infection, cancer and diabetes. In spite of the widespread usage of GIIα inhibitory drugs and the role of GIIα in brain function little is known about its expression in brain and other tissues. Here, we report generation of a highly specific chicken antibody to GIIα subunit and its characterization by Western blotting and immunoprecipitation using cerebral cortical extracts. Using this antibody we show that the GIIα protein is highly expressed in testis, kidney, and lung, with the least amount in heart. GIIα polypeptide levels in whole brain were comparable to spleen. However, higher expression of GIIα protein was detected in cerebral cortex reflecting its continuous requirement in correct folding of cell surface proteins. PMID:25131991

  14. Repetitive postprandial hyperglycemia increases cardiac ischemia/reperfusion injury: prevention by the alpha-glucosidase inhibitor acarbose.

    PubMed

    Frantz, Stefan; Calvillo, Laura; Tillmanns, Jochen; Elbing, Inka; Dienesch, Charlotte; Bischoff, Hilmar; Ertl, Georg; Bauersachs, Johann

    2005-04-01

    Protective effects of the alpha-glucosidase inhibitor acarbose have been reported for various diabetic complications. In the STOP-NIDDM study, even patients without overt diabetes, but with impaired glucose tolerance, had a reduction in cardiovascular events when treated with acarbose. Therefore, we investigated the effect of repetitive postprandial hyperglycemia on the cardiac ischemia/reperfusion injury in vivo. Mice were treated daily by single applications of placebo, sucrose (4 g/kg body weight), or sucrose + acarbose (10 mg/kg body weight) by gavage for 7 days. Acarbose treatment significantly reduced the sucrose-induced increase in plasma glucose concentration. Subsequently, animals underwent 30 min of ischemia by coronary artery ligation and 24 h of reperfusion in vivo. In the sucrose group, ischemia/reperfusion damage was significantly increased (infarct/area at risk, placebo vs. sucrose, 38.8+/-7.5% vs. 62.2+/-4.8%, P<0.05). This was prevented by acarbose treatment (infarct/area at risk 30.7+/-7.2%). While myocardial inflammation was similar in all groups, oxidative stress as indicated by a significant increase in lipid peroxides was enhanced in the sucrose, but not in the sucrose + acarbose group. In summary, repetitive postprandial hyperglycemia increases ischemia/reperfusion damage. This effect can be prevented by treatment with the alpha-glucosidase inhibitor acarbose.

  15. Enzyme-synthesized highly branched maltodextrins have slow glucose generation at the mucosal alpha-glucosidase level and are slowly digestible "in vivo"

    Technology Transfer Automated Retrieval System (TEKTRAN)

    For digestion of starch in humans, alpha-amylase first hydrolyzes starch molecules to produce alpha-limit dextrins, followed by complete hydrolysis to glucose by the mucosal alpha-glucosidases in the small intestine. It is known that alpha-1,6 linkages in starch are hydrolyzed at a lower rate than a...

  16. Enzymatic synthesis of a selective inhibitor for alpha-glucosidases: alpha-acarviosinyl-(1-->9)-3-alpha-D-glucopyranosylpropen.

    PubMed

    Lee, Young-Su; Lee, Myoung-Hee; Lee, Hee-Seob; Lee, Seung-Jae; Kim, Young-Wan; Zhang, Ran; Withers, Stephen G; Kim, Kwan Soo; Lee, Sung-Joon; Park, Kwan-Hwa

    2008-07-09

    Here, we describe the enzymatic synthesis of novel inhibitors using acarviosine-glucose as a donor and 3-alpha-D-glucopyranosylpropen (alphaGP) as an acceptor. Maltogenic amylase from Thermus sp. (ThMA) catalyzed the transglycosylation of the acarviosine moiety to alphaGP. The two major reaction products were isolated using chromatographies. Structural analyses revealed that acarviosine was transferred to either C-7 or C-9 of the alphaGP, which correspond to C-4 and C-6 of glucose. Both inhibited rat intestine alpha-glucosidase competitively but displayed a mixed-type inhibition mode against human pancreatic alpha-amylase. The alpha-acarviosinyl-(1-->7)-3-alpha-D-glucopyranosylpropen showed weaker inhibition potency than acarbose against both alpha-glycosidases. In contrast, the alpha-acarviosinyl-(1-->9)-3-alpha-D-glucopyranosylpropen exhibited a 3.0-fold improved inhibition potency against rat intestine alpha-glucosidase with 0.3-fold inhibition potency against human pancreatic alpha-amylase relative to acarbose. In conclusion, alpha-acarviosinyl-(1-->9)-3-alpha-D-glucopyranosylpropen is a novel alpha-glucosidase-selective inhibitor with 10-fold enhanced selectivity toward alpha-glucosidase over alpha-amylase relative to acarbose, and it could be applied as a potent hypoglycemic agent.

  17. Purification, characterization, and synergistic action of phytate-resistant alpha-amylase and alpha-glucosidase from Geobacillus thermodenitrificans HRO10.

    PubMed

    Ezeji, Thaddeus C; Bahl, Hubert

    2006-08-20

    The alpha-amylase (1, 4-alpha-d-glucanohydrolase; EC 3.2.1.1) and alpha-glucosidase (alpha-d-glucoside glucohydrolase; EC 3.2.1.20) secreted by Geobacillus thermodenitrificans HRO10 were purified to homogeneity (13.6-fold; 11.5% yield and 25.4-fold; 32.0% yield, respectively) through a series of steps. The molecular weight of alpha-amylase was 58kDa, as estimated by sodium dodecyl sulphate-polyacrylamide gel electrophoresis (SDS-PAGE). The alpha-amylase activity on potato starch was optimal at pH 5.5 and 80 degrees Celsius. In the presence of Ca(2+), the alpha-amylase had residual activity of more than 92% after 1h of incubation at 70 degrees Celsius. The alpha-amylase did not lose any activity in the presence of phytate (a selective alpha-amylase inhibitor) at concentrations as high as 10mM, rather it retained 90% maximal activity after 1h of incubation at 70 degrees Celsius. EGTA and EDTA were strong inhibitory substances of the enzyme. The alpha-amylase hydrolyzed soluble starch at 80 degrees Celsius, with a K(m) of 3.05mgml(-1) and a V(max) of 7.35Uml(-1). The molecular weight of alpha-glucosidase was approximately 45kDa, as determined by SDS-PAGE. The enzyme activity was optimal at pH 6.5-7.5 and 55 degrees Celsius. Phytate did not inhibit G. thermodenitrificans HRO10 alpha-glucosidase activity, whereas pCMB was a potent inhibitor of the enzyme. The alpha-glucosidase exhibited Michaelis-Menten kinetics with maltose at 55 degrees Celsius (K(m): 17mM; V(max): 23micromolmin(-1)mg(-1)). Thin-layer chromatography studies with G. thermodenitrificans HRO10 alpha-amylase and alpha-glucosidase showed an excellent synergistic action and did not reveal any transglycosylation catalyzed reaction by the alpha-glucosidase.

  18. Glycogen phosphorylase a inhibitors with a phenethylphenylphthalimide skeleton derived from thalidomide-related alpha-glucosidase inhibitors and liver X receptor antagonists.

    PubMed

    Motoshima, Kazunori; Ishikawa, Minoru; Sugita, Kazuyuki; Hashimoto, Yuichi

    2009-09-01

    Novel glycogen phosphorylase a (GPa) inhibitors with a phenethylphenylphthalimide skeleton were prepared based on alpha-glucosidase inhibitors and liver X receptor (LXR) antagonists derived from thalidomide. Their structure-activity relationships were analyzed. Some of the compounds thus prepared showed potent inhibitory activity against rabbit muscle GPa with more than 10-fold greater efficacy than a typical GPa inhibitor, 1,4-dideoxy-1,4-imino-D-arabinitol.

  19. Alpha-glucosidase inhibitors and hepatotoxicity in type 2 diabetes: a systematic review and meta-analysis

    PubMed Central

    Zhang, Longhao; Chen, Qiyan; Li, Ling; Kwong, Joey S. W.; Jia, Pengli; Zhao, Pujing; Wang, Wen; Zhou, Xu; Zhang, Mingming; Sun, Xin

    2016-01-01

    Alpha-glucosidase inhibitors (AGIs) was reported to be associated with several rare adverse hepatic events, but with inconsistent results. We aimed to investigate the risk of hepatotoxicity associated with the use of AGIs in patients with type 2 diabetes mellitus (T2DM), and performed a systematic review and meta-analysis. Fourteen studies (n = 2881) were eligible, all of which were RCTs. Meta-analysis of data regarding elevation of more than 3-fold the upper limit of normal (ULN) of AST and ALT showed statistically significant differences between AGIs treatment versus control (OR 6.86, 95% CI 2.50 to 18.80; OR 6.48, 95% CI 2.40 to 17.49). Subgroup analyses of elevation of more than 1.8-fold ULN of AST and ALT by dose of AGIs showed differential effects on AST and ALT (AST: OR 0.38 vs 7.31, interaction P = 0.003; ALT: OR 0.32 vs 4.55, interaction p = 0.02). Meta-analysis showed that AGIs might increase the risk of hepatotoxicity, and higher dose appeared to be associated with higher risk of hepatotoxicity. However, the evidence is limited with surrogate measures (i.e. ALT and AST), and no clinically important adverse events were observed. PMID:27596383

  20. d-Psicose Inhibits Intestinal alpha-Glucosidase and Suppresses the Glycemic Response after Ingestion of Carbohydrates in Rats.

    PubMed

    Matsuo, Tatsuhiro; Izumori, Ken

    2009-09-01

    d-psicose is one of the rare sugars present in small quantities in commercial carbohydrates and agricultural products. In this study, we investigated the effects of d-psicose on the activities of alpha-amylases and alpha-glucosidases in vitro, and evaluated the effects of d-psicose on the in vivo postprandial glycemic response using rats. In the in vitro study, d-psicose potently inhibited the intestinal sucrase and maltase, however, slightly inhibited the intestinal and salivary alpha-amylase activities. Male Wistar rats (6 months old) were administrated 2 g/kg of sucrose, maltose or soluble starch together with 0.2 g/kg of d-psicose or d-fructose. The d-psicose significantly inhibited the increment of plasma glucose concentration induced by sucrose or maltose. The starch-induced glycemic response tended to be suppressed by d-psicose, however the suppression was not significant. These results suggest that d-psicose inhibits intestinal sucrase and maltase activities and suppresses the plasma glucose increase the normally occurs after sucrose and maltose ingestion. Thus, d-psicose may be useful in preventing postprandial hyperglycemia in diabetic patients when foods containing sucrose and maltose are ingested.

  1. Miconia sp. Increases mRNA Levels of PPAR Gamma and Inhibits Alpha Amylase and Alpha Glucosidase.

    PubMed

    Ortíz-Martinez, David Mizael; Rivas-Morales, Catalina; de la Garza-Ramos, Myriam Angelica; Verde-Star, Maria Julia; Nuñez-Gonzalez, Maria Adriana; Leos-Rivas, Catalina

    2016-01-01

    Diabetes mellitus is a public health problem worldwide. For this reason, ethanolic extract of Miconia sp. from Oaxaca, Mexico, was selected in search of an alternative against this disease. The effect of Miconia sp. on mRNA expression of PPARγ on cell line 3T3-L1, its effect on alpha amylase and alpha glucosidase, lipid accumulation during adipogenesis, and cell viability on VERO cells were evaluated. The mRNA levels of PPARγ increased on 1.393 ± 0.008 folds, lipid accumulation was increased by 29.55% with Miconia sp. extract and 34.57% with rosiglitazone, and α-amylase and α-glycosidase were inhibited with IC50 values from 28.23 ± 2.15 μg/mL and 1.95 ± 0.15 μg/mL, respectively; the IC50 on antiproliferative activity on VERO cells was 314.54 ± 45.40 μg/mL. In case of α-amylase and α-glycosidase assays, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of enzymatic activity. On the other hand, on antiproliferative activity, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of cell proliferation. It was concluded that the compounds present in Miconia sp. ethanolic extract increase mRNA expression of PPARγ, inhibit α-amylase and α-glucosidase, and increase lipid accumulation. It constitutes an alternative as adjuvant in diabetes mellitus treatment; therefore, we recommend continuing identifying the compounds responsible for its promising in vivo antidiabetic activity.

  2. Miconia sp. Increases mRNA Levels of PPAR Gamma and Inhibits Alpha Amylase and Alpha Glucosidase

    PubMed Central

    Ortíz-Martinez, David Mizael; Rivas-Morales, Catalina; de la Garza-Ramos, Myriam Angelica; Verde-Star, Maria Julia; Nuñez-Gonzalez, Maria Adriana

    2016-01-01

    Diabetes mellitus is a public health problem worldwide. For this reason, ethanolic extract of Miconia sp. from Oaxaca, Mexico, was selected in search of an alternative against this disease. The effect of Miconia sp. on mRNA expression of PPARγ on cell line 3T3-L1, its effect on alpha amylase and alpha glucosidase, lipid accumulation during adipogenesis, and cell viability on VERO cells were evaluated. The mRNA levels of PPARγ increased on 1.393 ± 0.008 folds, lipid accumulation was increased by 29.55% with Miconia sp. extract and 34.57% with rosiglitazone, and α-amylase and α-glycosidase were inhibited with IC50 values from 28.23 ± 2.15 μg/mL and 1.95 ± 0.15 μg/mL, respectively; the IC50 on antiproliferative activity on VERO cells was 314.54 ± 45.40 μg/mL. In case of α-amylase and α-glycosidase assays, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of enzymatic activity. On the other hand, on antiproliferative activity, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of cell proliferation. It was concluded that the compounds present in Miconia sp. ethanolic extract increase mRNA expression of PPARγ, inhibit α-amylase and α-glucosidase, and increase lipid accumulation. It constitutes an alternative as adjuvant in diabetes mellitus treatment; therefore, we recommend continuing identifying the compounds responsible for its promising in vivo antidiabetic activity. PMID:27478477

  3. Evaluation of differential disaccharide excretion in urine for non-invasive investigation of altered intestinal disaccharidase activity caused by alpha-glucosidase inhibition, primary hypolactasia, and coeliac disease.

    PubMed Central

    Bjarnason, I; Batt, R; Catt, S; Macpherson, A; Maxton, D; Menzies, I S

    1996-01-01

    BACKGROUND/AIM: The reliability of a quantitative method for the non-invasive assessment of intestinal disaccharide hydrolysis was assessed. METHODS: Differential excretion of intact disaccharide, expressed as ratios of lactulose to appropriate hydrolysable disaccharides in urine collected following combined ingestion, has been investigated in healthy volunteers with drug induced alpha-glucosidase inhibition, in subjects with primary hypolactasia, and patients with coeliac disease. RESULTS: Oral administration of the alpha-glucosidase inhibitor 'Acarbose' (BAY g 5421, 200 mg) together with sucrose and lactulose increased the urinary sucrose/lactulose excretion ratios (% dose/10 h) fivefold. The effect was quantitatively reproducible, a higher dose of 'Acarbose' (500 mg) increasing the excretion ratio to about 1.0 indicating complete inhibition of intestinal sucrase activity. The suitability of the method for measuring differences in dose/response and duration of action was assessed by comparing three different alpha-glucosidase inhibitors (BAY g 5421, BAY m 1099, and BAY o 1248) and found to be satisfactory. Subjects with primary adult hypolactasia had urine lactose/lactulose excretion ratios raised to values indicating reduced rather than complete absence of lactase activity whereas sucrose/lactulose ratios were not significantly affected. 'Whole' intestinal disaccharidase activity assessed by this method demonstrated impairment of lactase, sucrase, and isomaltase in eight, one, and seven, respectively, of 20 patients with coeliac disease. By contrast in vitro assay of jejunal biopsy tissue indicated pan-disaccharidase deficiency in all but five of these patients. This shows the importance of distinguishing between 'local' and 'whole' intestinal performance. CONCLUSIONS: Differential urinary excretion of ingested disaccharides provides a reliable, quantitative, and non-invasive technique for assessing profiles of intestinal disaccharidase activity. PMID:8949640

  4. A quantitative assessment of the importance of barley seed alpha-amylase, beta-amylase, debranching enzyme, and alpha-glucosidase in starch degradation.

    PubMed

    Sun, Z T; Henson, C A

    1991-02-01

    Extracts of germinated barley (Hordeum vulgare L.) seeds of 41 different genotypes were analyzed for their activities of alpha-amylase, beta-amylase, alpha-glucosidase, and debranching enzyme and for their abilities to hydrolyze boiled soluble starch, nonboiled soluble starch, and starch granules extracted from barley seeds with water. Linear correlation analysis, used to quantitate the interactions between the seven parameters, revealed that boiled soluble starch was not a good substrate for predicting activities of enzymes functioning in in vivo starch hydrolysis as the extracts' abilities to hydrolyze boiled soluble starch was not correlated with their abilities to hydrolyze native starch granules. Activities of alpha-amylase and alpha-glucosidase were positively and significantly correlated with the seed extracts' abilities to hydrolyze all three starches. beta-Amylase was only significantly correlated with hydrolysis of boiled soluble starch. No significant correlations existed between debranching enzyme activity and hydrolysis of any of the three starches. Interactions between the four enzymes as they functioned together to hydrolyze the three types of starch were evaluated by path coefficient analysis. alpha-Amylase contributed to hydrolyses of all three starches primarily by its direct effect (noninteractive component). This direct contribution increased as the substrate progressed from the completely artificial boiled soluble starch, to the most physiologically significant substrate, native starch granules. alpha-Glucosidase contributed to the hydrolysis of boiled soluble starch primarily by its direct effect (noninteractive) yet contributed to starch granule hydrolysis primarily via its interaction with alpha-amylase (indirect effect). The contribution of beta-amylase to hydrolysis of boiled soluble starch was direct and it did not contribute significantly to hydrolysis of native starch granules.

  5. Leaky splicing mutation in the acid maltase gene is associated with delayed onset of glycogenosis type II

    SciTech Connect

    Boerkoel, C.F.; Exelbert, R.; Nicastri, C.; Nichols, R.C.; Plotz, P.H.; Raben, N.; Miller, F.W.

    1995-04-01

    An autosomal recessive deficiency of acid {alpha}-glucosidase (GAA), type II glycogenosis, is genetically and clinically heterogeneous. The discovery of an enzyme-inactivating genomic deletion of exon 18 in three unrelated genetic compound patients - two infants and and adult - provided a rare opportunity to analyze the effect of the second mutation in patients who displayed dramatically different phenotypes. A deletion of Lys-903 in one patient and a substitution of Arg for Leu-299 in another resulted in the fatal infantile form. In the adult, a T-to-G base change at position-13 of intron 1 resulted in alternatively spliced transcripts with deletion of exon 2, the location of the start codon. The low level of active enzyme (12% of normal) generated from the leakage of normally spliced mRNA sustained the patient to adult life. 61 refs., 9 figs., 3 tabs.

  6. The relationship between 1-deoxynojirimycin content and alpha-glucosidase inhibitory activity in leaves of 276 mulberry cultivars (Morus spp.) in Kyoto, Japan.

    PubMed

    Yatsunami, Kazuhisa; Ichida, Masatoshi; Onodera, Satoshi

    2008-01-01

    The relationship between 1-deoxynojirimycin (DNJ) content and alpha-glucosidase inhibitory activity in mulberry (Morus) leaves is discussed. Mulberry leaves were collected from the Center for Bioresource Field Science, Kyoto Institute of Technology, Kyoto, Japan on 19 May, 9 July, and 9 August, 2003. Mulberry leaves were extracted with 75% ethanol. The inhibitory activity for rat intestinal crude enzyme was measured using maltose. The content of DNJ in the extracts was measured using HPLC. The mean DNJ content in the 0.04-0.06% range was high in collected samples. The inhibitory activities in July and August were higher (P < 0.01) than in May, and the activity in July was higher (P < 0.01) than in August. A strong correlation (r = 0.901, r (2) = 0.811, n = 15) existed between DNJ content and alpha-glucosidase inhibition in leaves of Morus bombycis harvested in July. Similarly, correlation coefficients of the other mulberry varieties in July were higher than they were in May or August. The inhibitory activity and the DNJ content of Morus latifolia in August were lower than for any other mulberry variety. These results show that the high inhibitory cultivars harvested in July, except for M. latifolia, are more suited to products that contain high DNJ contents.

  7. Insulin secreting and alpha-glucosidase inhibitory activity of hexane extract of Annona squamosa Linn. in streptozotocin (STZ) induced diabetic rats.

    PubMed

    Ranjana; Tripathi, Yamini B

    2014-06-01

    The hexane extract of A. squamosa (ASHE) in 100 and 400 mg/kg body weight dose raised the insulin level when compared with Glimepiride (1 mg/kg) and also inhibited alpha-glucosidase activity when compared with Acarbose (10 mg/kg) in streptozotocin induced diabetic rats. The ASHE significantly reduced peak blood glucose (Gp30) and area under curve (AUC) in diabetic rats in oral glucose (OGTT) and oral sucrose (OSTT) tolerance test, but there was more reduction of Gp30 value than AUC in OSTT. Thus, it can be suggested that the ASHE, has hypoglycemic role at 2 levels, i.e. it acts as secretagogue and also inhibits the intestinal enzymes, responsible for glucose metabolism.

  8. Alternative Agents in Type 1 Diabetes in Addition to Insulin Therapy: Metformin, Alpha-Glucosidase Inhibitors, Pioglitazone, GLP-1 Agonists, DPP-IV Inhibitors, and SGLT-2 Inhibitors.

    PubMed

    DeGeeter, Michelle; Williamson, Bobbie

    2016-04-01

    Insulin is the mainstay of current treatment for patients with type 1 diabetes mellitus (T1DM). Due to increasing insulin resistance, insulin doses are often continually increased, which may result in weight gain for patients. Medications currently approved for the treatment of type 2 diabetes offer varying mechanisms of action that can help to reduce insulin resistance and prevent or deter weight gain. A MEDLINE search was conducted to review literature evaluating the use of metformin, alpha-glucosidase inhibitors, pioglitazone, glucagon-like peptide 1 agonists, dipeptidyl peptidase, and sodium-dependent glucose transporter 2 inhibitors, in patients with T1DM. Varying results were found with some benefits including reductions in hemoglobin A1c, decreased insulin doses, and favorable effects on weight. Of significance, a common fear of utilizing multiple therapies for diabetes treatment is the risk of hypoglycemia, and this review displayed limited evidence of hypoglycemia with multiple agents.

  9. Clinical and metabolic correction of pompe disease by enzyme therapy in acid maltase-deficient quail.

    PubMed Central

    Kikuchi, T; Yang, H W; Pennybacker, M; Ichihara, N; Mizutani, M; Van Hove, J L; Chen, Y T

    1998-01-01

    Pompe disease is a fatal genetic muscle disorder caused by a deficiency of acid alpha-glucosidase (GAA), a glycogen degrading lysosomal enzyme. GAA-deficient (AMD) Japanese quails exhibit progressive myopathy and cannot lift their wings, fly, or right themselves from the supine position (flip test). Six 4-wk-old acid maltase-deficient quails, with the clinical symptoms listed, were intravenously injected with 14 or 4.2 mg/kg of precursor form of recombinant human GAA or buffer alone every 2-3 d for 18 d (seven injections). On day 18, both high dose-treated birds (14 mg/kg) scored positive flip tests and flapped their wings, and one bird flew up more than 100 cm. GAA activity increased in most of the tissues examined. In heart and liver, glycogen levels dropped to normal and histopathology was normal. In pectoralis muscle, morphology was essentially normal, except for increased glycogen granules. In sharp contrast, sham-treated quail muscle had markedly increased glycogen granules, multi-vesicular autophagosomes, and inter- and intrafascicular fatty infiltrations. Low dose-treated birds (4.2 mg/kg) improved less biochemically and histopathologically than high dose birds, indicating a dose-dependent response. Additional experiment with intermediate doses and extended treatment (four birds, 5.7-9 mg/kg for 45 d) halted the progression of the disease. Our data is the first to show that an exogenous protein can target to muscle and produce muscle improvement. These data also suggest enzyme replacement with recombinant human GAA is a promising therapy for human Pompe disease. PMID:9466978

  10. Clinical and metabolic correction of pompe disease by enzyme therapy in acid maltase-deficient quail.

    PubMed

    Kikuchi, T; Yang, H W; Pennybacker, M; Ichihara, N; Mizutani, M; Van Hove, J L; Chen, Y T

    1998-02-15

    Pompe disease is a fatal genetic muscle disorder caused by a deficiency of acid alpha-glucosidase (GAA), a glycogen degrading lysosomal enzyme. GAA-deficient (AMD) Japanese quails exhibit progressive myopathy and cannot lift their wings, fly, or right themselves from the supine position (flip test). Six 4-wk-old acid maltase-deficient quails, with the clinical symptoms listed, were intravenously injected with 14 or 4.2 mg/kg of precursor form of recombinant human GAA or buffer alone every 2-3 d for 18 d (seven injections). On day 18, both high dose-treated birds (14 mg/kg) scored positive flip tests and flapped their wings, and one bird flew up more than 100 cm. GAA activity increased in most of the tissues examined. In heart and liver, glycogen levels dropped to normal and histopathology was normal. In pectoralis muscle, morphology was essentially normal, except for increased glycogen granules. In sharp contrast, sham-treated quail muscle had markedly increased glycogen granules, multi-vesicular autophagosomes, and inter- and intrafascicular fatty infiltrations. Low dose-treated birds (4.2 mg/kg) improved less biochemically and histopathologically than high dose birds, indicating a dose-dependent response. Additional experiment with intermediate doses and extended treatment (four birds, 5.7-9 mg/kg for 45 d) halted the progression of the disease. Our data is the first to show that an exogenous protein can target to muscle and produce muscle improvement. These data also suggest enzyme replacement with recombinant human GAA is a promising therapy for human Pompe disease.

  11. Alteration of membrane oligosaccharides by castanospermine, an alpha glucosidase inhibitor, enhances immunoglobulin production in Staphylococcus aureus Cowan I-stimulated lymphocyte culture.

    PubMed

    Karasuno, T; Kanayama, Y; Nishiura, T; Nakao, H; Kurata, Y; Yonezawa, T; Tarui, S

    1990-11-01

    Castanospermine (CSP) inhibits alpha-glucosidase, which is involved in the initial step of N-linked oligosaccharide processing of secretory and membrane glycoproteins. In Staphylococcus aureus Cowan I (SAC)-stimulated human lymphocyte culture, CSP at a dose of 20 micrograms/ml caused a twofold increase in immunoglobulin G (IgG) release after 7 days. An initial 48-h exposure to CSP sufficed for this enhancing effect. Plaque-forming cell assays on the seventh day disclosed that CSP caused an increase in the number of IgG-, IgA- and IgM-secreting cells. In cross-culture experiments, only a mixture of B cells pretreated with CSP and untreated T cells showed an increase in IgG production. Tritiated thymidine incorporation studies revealed that CSP enhanced B-cell responses to T cell-derived soluble factor (TSF). When incubated with CSP for 18 h, B cells showed an increased surface binding on [3H]concanavalin A (Con A). These results indicate that the alteration in B-cell membrane oligosaccharides enhances the response to TSF at an early stage of SAC culture, leading to an increase in Ig-secreting cell number at later stages. The present study provides evidence that cell-surface oligosaccharides of B cells play an important role in the responses of B cells to lymphokines.

  12. [Alpha-glucosidase inhibitor for the prevention of type 2 diabetes mellitus: a randomised, double-blind trial in Japanese subjects with impaired glucose tolerance].

    PubMed

    Kawamori, Ryuzo; Tajima, Naoko; Iwamoto, Yasuhiko; Kashiwagi, Atsunori; Shimamoto, Kazuaki; Kaku, Kohei

    2009-09-01

    The detrimental effects of a sedentary lifestyle and poor dietary habits are having a significant negative impact on health statistics, with obesity and its attendant risks becoming a major problem in most developed nations, including Japan. Interventions which prevent or delay the development of type 2 diabetes have the potential to reduce the morbidity and mortality associated with the disease and, as a consequence, related healthcare costs. The study conducted to assess whether alpha-glucosidase inhibitor, voglibose could prevent type 2 diabetes developing in high-risk Japanese subjects with impaired glucose tolerance (IGT). 1,780 eligible subjects received standard diet and exercise therapy, and 897 were randomised to receive voglibose and 883 placebo. The study was planned for treatment to be continued until participants developed type 2 diabetes [primary endpoint; determined by bi-annual oral glucose tolerance tests (OG'Ts) as well as fasting blood glucose measured every 3 months] or normoglycaemia or for a minimum of 3 years, subject to the findings of an interim analysis. The interim analysis significantly favoured voglibose and end-of-study report involves individuals treated for an average of 48.1 weeks. Subjects treated with voglibose had a significantly lower risk for the progression to type 2 diabetes than placebo (50/897 vs 106/881: hazard ratio 0.595). Also, significantly more subjects in the voglibose group achieved normoglycaemia compared with those in the placebo group (599/897 vs 454/881: hazard ratio 1.539). Voglibose, in addition to standard care with diet and exercise, was effective in preventing the progression of IGT to type 2 diabetes and in increasing the proportion of individuals with normoglycaemia in high-risk Japanese subjects with IGT.

  13. [Constituents relating to anti-oxidative and alpha-glucosidase inhibitory activities in Yacon aerial part extract].

    PubMed

    Terada, Sumio; Ito, Kikuo; Yoshimura, Akira; Noguchi, Naoto; Ishida, Takashi

    2006-08-01

    Hot water extract of the aerial part of Yacon (Smallanthus sonchifolia, Compositae) showed potent free radical-scavenging activity and inhibitory effects on lipid peroxidation in rat brain homogenate. The most potent antioxidative activity focused on the 50% MeOH-eluted fraction on DIAION HP-20 column chromatography. The structure of the major component in the fraction was identified as 2,3,5-tricaffeoylaltraric acid (TCAA) based on spectroscopic evidence. The antioxidative activity of TCAA is superior to that of natural antioxidants such as (+/-)-catechin, alpha-tocopherol, and ellagic acid, and TCAA also showed selective maltase-inhibitory activity (IC(50) 49 microg/ml). As the hypoglycemic activity of Yacon extract was described in a previous report, the present results showing that the aerial part of Yacon has strong antioxidative activity may encourage its potential use as a food supplement to prevent type II diabetes.

  14. A simple and efficient synthesis of novel inhibitors of alpha-glucosidase based on benzimidazole skeleton and molecular docking studies.

    PubMed

    Özil, Musa; Emirik, Mustafa; Etlik, Semiha Yılmaz; Ülker, Serdar; Kahveci, Bahittin

    2016-10-01

    A novel series of benzimidazole derivatives were prepared starting from o-phenylenediamine and 4-nitro-o-phenylenediamine with iminoester hydrochlorides. Acidic proton in benzimidazole was exchanged with ethyl bromoacetate, then ethyl ester group was transformed into hydrazide group. Cyclization using CS2/KOH leads to the corresponding 1,3,4-oxadiazole derivative, which was treated with phenyl isothiocyanate resulted in carbothioamide group, respectively. As the target compounds, triazole derivative was obtained under basic condition and thiadiazole derivative was obtained under acidic condition from cyclization of carbothioamide group. Most reactions were conducted using both the microwave and conventional methods to compare yields and reaction times. All compounds obtained in this study were investigated for α-glucosidase inhibitor activity. Compounds 6a, 8a, 4b, 5b, 6b and 7b were potent inhibitors with IC50 values ranging from 10.49 to 158.2μM. This has described a new class of α-glucosidase inhibitors. Molecular docking studies were done for all compounds to identify important binding modes responsible for inhibition activity of α-glucosidase.

  15. Inhibition of alpha-glucosidase I of the glycoprotein-processing enzymes by 6-O-butanoyl castanospermine (MDL 28,574) and its consequences in human immunodeficiency virus-infected T cells.

    PubMed Central

    Taylor, D L; Kang, M S; Brennan, T M; Bridges, C G; Sunkara, P S; Tyms, A S

    1994-01-01

    The 6-O-butanoyl derivative of castanospermine (MDL 28,574) was previously shown to be approximately 30-fold more potent than the naturally occurring molecule at inhibiting the replication of human immunodeficiency virus (HIV) (D. L. Taylor, P. S. Sunkara, P. S. Liu, M. S. Kang, T. L. Bowlin, and A. S. Tyms, AIDS 5:693-698, 1991). We now report that consistent with its improved anti-HIV activity, MDL 28,574 is more effective (50% inhibitory concentration [IC50], 20 microM) than the parent molecule (IC50, 254 microM) at causing the accumulation of glucosylated oligosaccharides in HIV-infected cells by inhibition of glycoprotein processing. These were predominantly of the glucose 3 type, as determined by P4 Bio-Gel analysis after digestion with purified alpha-glucosidase I, indicating that, intracellularly, this enzyme is the major target for inhibition. MDL 28,574, however, was less active (IC50, 1.27 microM) than castanospermine (IC50, 0.12 microM) against the mutual target enzyme, cellular alpha-glucosidase I, in a cell-free assay system. The increased effects of MDL 28,574 against alpha-glucosidase I in cell culture were attributed to the improved cellular uptake of the more lipophilic derivative. Inhibition of this enzyme activity in HIV-infected H9 cells impaired viral glycoprotein processing and resulted in the expression of abnormally configured gp120. This did not affect virus production, but the virions had decreased infectivity which was partially related to a reduced ability to bind to CD4+ T cells. Images PMID:7986008

  16. Biogenesis of lysosomal enzymes in the alpha-glucosidase II-deficient modA mutant of Dictyostelium discoideum: retention of alpha-1,3-linked glucose on N-linked oligosaccharides delays intracellular transport but does not alter sorting of alpha-mannosidase or beta-glucosidase.

    PubMed

    Ebert, D L; Bush, J M; Dimond, R L; Cardelli, J A

    1989-09-01

    The endoplasmic reticulum-localized enzyme alpha-glucosidase II is responsible for removing the two alpha-1,3-linked glucose residues from N-linked oligosaccharides of glycoproteins. This activity is missing in the modA mutant strain, M31, of Dictyostelium discoideum. Results from both radiolabeled pulse-chase and subcellular fractionation experiments indicate that this deficiency did not prevent intracellular transport and proteolytic processing of the lysosomal enzymes, alpha-mannosidase and beta-glucosidase. However, the rate at which the glucosylated precursors left the rough endoplasmic reticulum was several-fold slower than the rate at which the wild-type precursors left this compartment. Retention of glucose residues did not disrupt the binding of the precursor forms of the enzymes with intracellular membranes, indicating that the delay in movement of proteins from the ER did not result from lack of association with membranes. However, the mutant alpha-mannosidase precursor contained more trypsin-sensitive sites than did the wild-type precursor, suggesting that improper folding of precursor molecules might account for the slow rate of transport to the Golgi complex. Percoll density gradient fractionation of extracts prepared from M31 cells indicated that the proteolytically processed mature forms of alpha-mannosidase and beta-glucosidase were localized to lysosomes. Finally, the mutation in M31 may have other, more dramatic, effects on the lysosomal system since two enzymes, N-acetylglucosaminidase and acid phosphatase, were secreted much less efficiently from lysosomal compartments by the mutant strain.

  17. The importance of starch and sucrose digestion in nutritive biology of synanthropic acaridid mites: alpha-amylases and alpha-glucosidases are suitable targets for inhibitor-based strategies of mite control.

    PubMed

    Erban, Tomas; Erbanova, Michaela; Nesvorna, Marta; Hubert, Jan

    2009-07-01

    The adaptation of nine species of mites that infest stored products for starch utilization was tested by (1) enzymatic analysis using feces and whole mite extracts, (2) biotests, and (3) inhibition experiments. Acarus siro, Aleuroglyphus ovatus, and Tyroborus lini were associated with the starch-type substrates and maltose, with higher enzymatic activities observed in whole mite extracts. Lepidoglyphus destructor was associated with the same substrates but had higher activities in feces. Dermatophagoides farinae, Chortoglyphus arcuatus, and Caloglyphus redickorzevi were associated with sucrose. Tyrophagus putrescentiae and Carpoglyphus lactis had low or intermediate enzymatic activity on the tested substrates. Biotests on starch additive diets showed accelerated growth of species associated with the starch-type substrates. The inhibitor acarbose suppressed starch hydrolysis and growth of the mites. We suggest that the species with higher starch hydrolytic activity in feces were more tolerant to acarbose, and alpha-amylase and alpha-glucosidase of synanthropic mites are suitable targets for inhibitor-based strategies of mite control.

  18. GaAs solar cell test facility

    NASA Astrophysics Data System (ADS)

    Kawashima, M.; Hosoda, Y.; Suzawa, C.; Shimada, T.; Motoyoshi, K.; Sasatani, Y.

    1982-01-01

    A hybrid type (electricity and heat) GaAs solar cell test facility has been made to evaluate total characteristics of GaAs cell and to study the energy conversion system. The size of a solar collector is 3.4 m x 2.1 m and 60 GaAs cells with Fresnel lenses are attached on it. The solar collector is controlled by a microcomputer to track the sun. Electric energy produced by the cells is stored in a lead-acid battery and then supplied to the load through a DC-AC inverter. The microcomputer also controls the data acquisition in parallel with tracking. This paper presents an overview of the facility and the experimental results of power generation obtained to date.

  19. Peeled film GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    1990-01-01

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  20. Long-term correction of glycogen storage disease type II with a hybrid Ad-AAV vector.

    PubMed

    Sun, Bao-dong; Chen, Y-T; Bird, Andrew; Amalfitano, Andrea; Koeberl, Dwight D

    2003-02-01

    We administered an adenovirus-adeno-associated virus (Ad-AAV) vector encoding human acid alpha-glucosidase (hGAA) to acid alpha-glucosidase-knockout (GAA-KO) mice on day 3 of life by gastrocnemius injection. In contrast to previous results for muscle-targeted Ad vector in adult GAA-KO mice, the muscles of the hindlimb showed reduced glycogen content and persistent hGAA for as long as 6 months after neonatal Ad-AAV vector administration. Not only the injected gastrocnemius muscles, but also the hamstrings and quadriceps muscles produced therapeutic levels of hGAA as a result of widespread transduction with the Ad-AAV vector; moreover, hGAA activity was 50-fold elevated as compared to normal mice. Vector RNA was detected in the hindlimb muscles, the hearts, and the livers by northern blot analysis and/or by RT-PCR for as long as 6 months. The low levels of hGAA detected in the heart were attributable to transduction with the Ad-AAV vector, not to secretion of hGAA by the injected muscle and uptake by the heart. Finally, although an antibody response to hGAA was present, it did not prevent the correction of glycogen storage in the skeletal muscle of GAA-KO mice.

  1. Peeled film GaAs solar cells for space power

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-01-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  2. A GaAs phononic crystal with shallow noncylindrical holes.

    PubMed

    Petrus, Joseph A; Mathew, Reuble; Stotz, James A H

    2014-02-01

    A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs substrate using a citric acid:H2O2 etching procedure and a photolithographed array pattern. Although nonuniform and asymmetric etch rates limit the depth and shape of the phononic crystal holes, the matrix acts as a PnC, as demonstrated by insertion loss measurements together with interferometric imaging of surface acoustic waves propagating on the GaAs surface. The measured vertical displacement induced by surface phonons compares favorably with finite-difference time-domain simulations of a PnC with rounded-square holes.

  3. Inhibition of glycogen biosynthesis via mTORC1 suppression as an adjunct therapy for Pompe disease.

    PubMed

    Ashe, Karen M; Taylor, Kristin M; Chu, Qiuming; Meyers, Elizabeth; Ellis, Allen; Jingozyan, Varvara; Klinger, Katherine; Finn, Patrick F; Cooper, Christopher G F; Chuang, Wei-Lien; Marshall, John; McPherson, John M; Mattaliano, Robert J; Cheng, Seng H; Scheule, Ronald K; Moreland, Rodney J

    2010-08-01

    Pompe disease, also known as glycogen storage disease (GSD) type II, is caused by deficiency of lysosomal acid alpha-glucosidase (GAA). The resulting glycogen accumulation causes a spectrum of disease severity ranging from a rapidly progressive course that is typically fatal by 1-2years of age to a more slowly progressive course that causes significant morbidity and early mortality in children and adults. Recombinant human GAA (rhGAA) improves clinical outcomes with variable results. Adjunct therapy that increases the effectiveness of rhGAA may benefit some Pompe patients. Co-administration of the mTORC1 inhibitor rapamycin with rhGAA in a GAA knockout mouse reduced muscle glycogen content more than rhGAA or rapamycin alone. These results suggest mTORC1 inhibition may benefit GSDs that involve glycogen accumulation in muscle.

  4. Cerebrovascular Complications of Diabetes: Alpha Glucosidase Inhibitor as Potential Therapy.

    PubMed

    Patel, S S

    2016-02-01

    Increased risk of cerebrovascular accident in diabetes cannot be fully explained by traditional risk factors. Epidemiological studies show that postprandial hyperglycemia is strongly associated with cerebrovascular events and cerebrovascular-associated mortality. Postprandial hyperglycemia contributes to vascular damage by several mechanisms such as endothelial dysfunction, arthrosclerosis, oxidative stress, inflammation, and hypercoagulability. Hyperglycemia has deleterious effects on the vascular endothelium and leads to the development of cerebrovascular disease. Thus, an important strategy to reduce cerebrovascular risk in patients with diabetes is to reduce postprandial hyperglycemia. Glucagon-like peptide-1 receptor agonists, dipeptidyl peptidase-4 inhibitors, and α-glucosidase inhibitors predominantly reduce postprandial plasma glucose levels. Among all of these, α-glucosidase inhibitors reduces postprandial hyperglycemia by delaying carbohydrate absorption from the intestine and this mechanism provides glycemic control without exacerbating coexisting cerebrovascular risk factors. Good glycemic control is proven to reduce the risk of cardiovascular complications, but equivalent evidence for cerebrovascular risk reduction is lacking. This review examines the evidences that postprandial hyperglycemia plays a major role in vascular damage, along with the complex interplay between hyperglycemia and coexisting risk factors. Furthermore, the mechanism by which α-glucosidase inhibitors may prevent this vascular damage as well as risk of hypoglycemia with α-glucosidase inhibitors are examined. Thus, this review suggests that α-glucosidase inhibitors are useful in reducing the risk of cerebrovascular events in patients with diabetes.

  5. A potent alpha-glucosidase inhibitor from Myristica cinnamomea King.

    PubMed

    Sivasothy, Yasodha; Loo, Kong Yong; Leong, Kok Hoong; Litaudon, Marc; Awang, Khalijah

    2016-02-01

    A dimeric acylphenol and a potent α-glucosidase inhibitor, giganteone D (IC50 5.05μM), was isolated and characterized from the bark of Myristica cinnamomea King. The bark also yielded an acylphenol with an unprecedented skeleton for which the name cinnamomeone A (IC50 358.80μM) was proposed. Their structures were established by means of NMR and MS spectrometric analyses. The Lineweaver-Burk plot of giganteone D indicated that it was a mixed-type inhibitor. This is the first report on the α-glucosidase inhibiting potential of acylphenols.

  6. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  7. Neuropathology in respiratory-related motoneurons in young Pompe (Gaa(-/-)) mice.

    PubMed

    Turner, Sara M F; Hoyt, Aaron K; ElMallah, Mai K; Falk, Darin J; Byrne, Barry J; Fuller, David D

    2016-06-15

    Respiratory and/or lingual dysfunction are among the first motor symptoms in Pompe disease, a disorder resulting from absence or dysfunction of the lysosomal enzyme acid α-glucosidase (GAA). Here, we histologically evaluated the medulla, cervical and thoracic spinal cords in 6 weeks old asymptomatic Pompe (Gaa(-/-)) mice to determine if neuropathology in respiratory motor regions has an early onset. Periodic acid-Schiff (PAS) staining indicated glycogen accumulation was exclusively occurring in Gaa(-/-) hypoglossal, mid-cervical and upper thoracic motoneurons. Markers of DNA damage (Tunel) and ongoing apoptosis (Cleaved Caspase 3) did not co-localize with PAS staining, but were prominent in a medullary region which included the nucleus tractus solitarius, and also in the thoracic spinal dorsal horn. We conclude that respiratory-related motoneurons are particularly susceptible to GAA deficiency and that neuronal glycogen accumulation and neurodegeneration may occur independently in early stage disease. The data support early therapeutic intervention in Pompe disease.

  8. Spectroscopic constants and potential energy curves of GaAs, GaAs +, and GaAs -

    NASA Astrophysics Data System (ADS)

    Balasubramanian, K.

    1990-02-01

    Twenty electronic states of GaAs, 12 electronic states of GaAs +, and 13 electronic states of GaAs - are investigated using relativistic ab initio complete active space MCSCF (CASSCF) followed by large-scale configuration interaction calculations which included up to 700 000 configurations. Potential energy curves and spectroscopic constants of all these states of three radicals are obtained. Spectroscopic constants of low-lying states of GaAs are in very good agreement with both experiment and all-electron results. Two nearly-degenerate states of 2Σ +, 2Π ( 2Σ + lower) symmetries are found as candidates for the ground state of GaAs -. The GaAs - negative ion is found to be more stable compared to the neutral GaAs ( De(GaAs -) = 3 eV). The electron affinity of GaAs is computed as 0.89 and 1.3 eV at the FOCI and SOCI levels of theory, respectively. Calculated potential energy curves of GaAs are in accord with the experimentally observed predissociation in the 3Π( III) - X3Σ- system.

  9. Involvement of Agrobacterium tumefaciens Galacturonate Tripartite ATP-Independent Periplasmic (TRAP) Transporter GaaPQM in Virulence Gene Expression

    PubMed Central

    Zhao, Jinlei

    2015-01-01

    Monosaccharides capable of serving as nutrients for the soil bacterium Agrobacterium tumefaciens are also inducers of the vir regulon present in the tumor-inducing (Ti) plasmid of this plant pathogen. One such monosaccharide is galacturonate, the predominant monomer of pectin found in plant cell walls. This ligand is recognized by the periplasmic sugar binding protein ChvE, which interacts with the VirA histidine kinase that controls vir gene expression. Although ChvE is also a member of the ChvE-MmsAB ABC transporter involved in the utilization of many neutral sugars, it is not involved in galacturonate utilization. In this study, a putative tripartite ATP-independent periplasmic (TRAP) transporter, GaaPQM, is shown to be essential for the utilization of galacturonic acid; we show that residue R169 in the predicted sugar binding site of the GaaP is required for activity. The gene upstream of gaaPQM (gaaR) encodes a member of the GntR family of regulators. GaaR is shown to repress the expression of gaaPQM, and the repression is relieved in the presence of the substrate for GaaPQM. Moreover, GaaR is shown to bind putative promoter regions in the sequences required for galacturonic acid utilization. Finally, A. tumefaciens strains carrying a deletion of gaaPQM are more sensitive to galacturonate as an inducer of vir gene expression, while the overexpression of gaaPQM results in strains being less sensitive to this vir inducer. This supports a model in which transporter activity is crucial in ensuring that vir gene expression occurs only at sites of high ligand concentration, such as those at a plant wound site. PMID:26637603

  10. Disruption of Higher Order DNA Structures in Friedreich’s Ataxia (GAA)n Repeats by PNA or LNA Targeting

    PubMed Central

    Bergquist, Helen; Rocha, Cristina S. J.; Álvarez-Asencio, Rubén; Nguyen, Chi-Hung; Rutland, Mark. W.; Smith, C. I. Edvard; Good, Liam; Nielsen, Peter E.; Zain, Rula

    2016-01-01

    Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigenetic modifications. With the aim of interfering with higher order H-DNA (like) DNA structures within pathological (GAA)n expansions, we examined sequence-specific interaction of peptide nucleic acid (PNA) with (GAA)n repeats of different lengths (short: n=9, medium: n=75 or long: n=115) by chemical probing of triple helical and single stranded regions. We found that a triplex structure (H-DNA) forms at GAA repeats of different lengths; however, single stranded regions were not detected within the medium size pathological repeat, suggesting the presence of a more complex structure. Furthermore, (GAA)4-PNA binding of the repeat abolished all detectable triplex DNA structures, whereas (CTT)5-PNA did not. We present evidence that (GAA)4-PNA can invade the DNA at the repeat region by binding the DNA CTT strand, thereby preventing non-canonical-DNA formation, and that triplex invasion complexes by (CTT)5-PNA form at the GAA repeats. Locked nucleic acid (LNA) oligonucleotides also inhibited triplex formation at GAA repeat expansions, and atomic force microscopy analysis showed significant relaxation of plasmid morphology in the presence of GAA-LNA. Thus, by inhibiting disease related higher order DNA structures in the Frataxin gene, such PNA and LNA oligomers may have potential for discovery of drugs aiming at recovering Frataxin expression. PMID:27846236

  11. Correction of glycogen storage disease type II by an adeno-associated virus vector containing a muscle-specific promoter.

    PubMed

    Sun, Baodong; Zhang, Haoyue; Franco, Luis M; Brown, Talmage; Bird, Andrew; Schneider, Ayn; Koeberl, Dwight D

    2005-06-01

    Glycogen storage disease type II (Pompe disease) causes death in infancy from cardiorespiratory failure due to acid alpha-glucosidase (GAA; acid maltase) deficiency. An AAV2 vector pseudotyped as AAV6 (AAV2/6 vector) transiently expressed high-level human GAA in GAA-knockout (GAA-KO) mice without reducing glycogen storage; however, in immunodeficient GAA-KO/SCID mice the AAV2/6 vector expressed high-level GAA and reduced the glycogen content of the injected muscle for 24 weeks. A CD4+/CD8+ lymphocytic infiltrate was observed in response to the AAV2/6 vector in immunocompetent GAA-KO mice. When a muscle-specific creatine kinase promoter was substituted for the CB promoter (AAV-MCKhGAApA), that AAV2/6 vector expressed high-level GAA and reduced glycogen content in immunocompetent GAA-KO mice. Muscle-restricted expression of hGAA provoked only a humoral (not cellular) immune response. Intravenous administration of a high number of particles of AAV-MCKhGAApA as AAV2/7 reduced the glycogen content of the heart and skeletal muscle and corrected individual myofibers in immunocompetent GAA-KO mice 24 weeks postinjection. In summary, persistent correction of muscle glycogen content was achieved with an AAV vector containing a muscle-specific promoter in GAA-KO mice, and this approach should be considered for muscle-targeted gene therapy in Pompe disease.

  12. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  13. GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Conway, E. J.

    1982-01-01

    The major thrusts proposed for GaAs were increased efficiency and improved radiation damage data. Current laboratory production cells consistently achieve 16 percent AMO one-Sun efficiency. The user community wants 18-percent efficient cells as soon as possible, and such a goal is though to be achievable in 2 years with sufficient research funds. A 20-percent research cell is considered the efficiency limit with current technology, and such a cell seems realizable in approximately 4 years. Future efficiency improvements await improved substrates and materials. For still higher efficiencies, concentrator cells and multijunction cells are proposed as near-term directions.

  14. Multiple Applications of GaAs semiconductors

    NASA Astrophysics Data System (ADS)

    Martel, Jenrené; Wonka, Willy

    2003-03-01

    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  15. Pulse transformer for GaAs laser

    NASA Technical Reports Server (NTRS)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  16. GaAs homojunction solar cell development

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

    1980-01-01

    The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

  17. Ohmic contact to GaAs semiconductor

    NASA Technical Reports Server (NTRS)

    Hovel, H. J.; Woodall, J. M.

    1980-01-01

    Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.

  18. Laser Annealing of GaAs

    DTIC Science & Technology

    1978-12-01

    annealing implanted layers. Sheet resistance measurements made on the irradiated semi- insulating GaAs samples indicate no significant change in the... sheet resistance after laser irradiation (typical decrease in the sheet resistance after laser irradiation was found to be less than a factor of two...OF THE SHEET - RESISTANCE (P ) THE EFFECTIVE SHEET ELECTRON CONCENTRATION (N ), AND THE EFFECTIVE MOBILITY _u)FOR SEMIb- INSULATING GaAs IMPLANTED WITH

  19. Identification and Functional Characterization of GAA Mutations in Colombian Patients Affected by Pompe Disease.

    PubMed

    Niño, Mónica Yasmín; Mateus, Heidi Eliana; Fonseca, Dora Janeth; Kroos, Marian A; Ospina, Sandra Yaneth; Mejía, Juan Fernando; Uribe, Jesús Alfredo; Reuser, Arnold J J; Laissue, Paul

    2013-01-01

    Pompe disease (PD) is a recessive metabolic disorder characterized by acid α-glucosidase (GAA) deficiency, which results in lysosomal accumulation of glycogen in all tissues, especially in skeletal muscles. PD clinical course is mainly determined by the nature of the GAA mutations. Although ~400 distinct GAA sequence variations have been described, the genotype-phenotype correlation is not always evident.In this study, we describe the first clinical and genetic analysis of Colombian PD patients performed in 11 affected individuals. GAA open reading frame sequencing revealed eight distinct mutations related to PD etiology including two novel missense mutations, c.1106 T > C (p.Leu369Pro) and c.2236 T > C (p.Trp746Arg). In vitro functional studies showed that the structural changes conferred by both mutations did not inhibit the synthesis of the 110 kD GAA precursor form but affected the processing and intracellular transport of GAA. In addition, analysis of previously described variants located at this position (p.Trp746Gly, p.Trp746Cys, p.Trp746Ser, p.Trp746X) revealed new insights in the molecular basis of PD. Notably, we found that p.Trp746Cys mutation, which was previously described as a polymorphism as well as a causal mutation, displayed a mild deleterious effect. Interestingly and by chance, our study argues in favor of a remarkable Afro-American and European ancestry of the Colombian population. Taken together, our report provides valuable information on the PD genotype-phenotype correlation, which is expected to facilitate and improve genetic counseling of affected individuals and their families.

  20. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  1. Cathodoluminescence Characterization of Ion Implanted GaAs.

    DTIC Science & Technology

    1980-03-01

    into GaAs. In their experi- ment, GaAs thin films were grown on MgA12 4 spinel substrates. When the electrons had sufficient energy they caused the...sections. Growing The epi-layers were grown on a chromium doped GaAs substrate using a vapor phase epitaxial growth technique. They were grown by G

  2. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  3. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  4. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  5. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  6. Carbon doping of GaAs NWs

    NASA Astrophysics Data System (ADS)

    Salehzadeh Einabad, Omid

    Nanowires (NWs) have been proposed and demonstrated as the building blocks for nanoscale electronic and photonic devices such as NW field effect transistors and NW solar cells which rely on doping and trap-free carrier transport. Controlled doping of NWs and a high degree of structure and morphology control are required for device applications. However, doping of III-V nanowires such as GaAs nanowires has not been reported extensively in the literature. Carbon is a well known p-type dopant in planar GaAs due to its low diffusivity and high solubility in bulk GaAs; however its use as an intentional dopant in NW growth has not yet been investigated. In this work we studied the carbon doping of GaAs nanowires using CBr4 as the dopant source. Gold nanoparticles (NP) at the tip ofthe NWs have been used to drive the NW growth. We show that carbon doping suppresses the migration ofthe gold NPs from the tip of the NWs. In addition, we show that the carbon doping of GaAs NWs is accompanied by an increase of the axial growth rate and decrease of the lateral growth rate ofthe NWs. Carbon-doped GaAs NWs, unlike the undoped ones which are highly tapered, are rod-like. The origin of the observed morphological changes is attributed to the carbon adsorbates on the sidewalls ofthe nanowires which suppress the lateral growth of the nanowires and increase the diffusion length of the gallium adatoms on the sidewalls. Stacking fault formation consisting of alternating regIOns of zincblende and wurtzite structures has been commonly observed in NWs grown along the (111) direction. In this work, based on transmission electron microscopy (TEM) analysis, we show that carbon doping ofGaAs NWs eliminates the stacking fault formation. Raman spectroscopy was used to investigate the effects of carbon doping on the vibrational properties of the carbon-doped GaAs nanowires. Carbon doping shows a strong impact on the intrinsic longitudinal and transverse optical (La and TO) modes of the GaAs

  7. Surface and coordination chemistry related to GaAs

    NASA Astrophysics Data System (ADS)

    Keys, Andrea

    The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron diffraction and consist of planar three-coordinate monomers. Salient structural parameters (ra) include: Al-C = 2.005(3) A, Ga-C = 2.034(2) A. The geometries are controlled by inter-ligand interactions. The electron diffraction structures are compared to those determined by ab initio calculations for M(tBU)3 (M = Al, Ga, In). To understand the most suitable linkages for the surface of GaAs, model compounds were synthesized by reacting Ga(tBU)3 and [tBu2Ga(mu-Cl]2 with one molar equivalent of varying ligands. The synthesized compounds include chlorides, benzenethiolate, dithiocarbamates, carboxylates, amides, benzohydroxamate, and phenylphosphonate. The Ga ⋯ Ga and Ga-ligand interatomic distances for these compounds, as well as Group 15 and 16 donor bridging ligands, are compared to the values for the surface of GaAs and cubic-GaS in order to determine their suitability as linkage groups for self-assembled monolayers. The most suitable linkages were determined to be benzenethiol and phenylphophonic acid, and these were used to grow self-assembled monolayers on {100} GaAs. Carboxylic acid was also used, to determine the success of the organometallic model compounds in predicting the suitability of ligands for surface reaction. Self-assembled monolayers were also grown on Al2O3, using carboxylic acids and phenylphosphonic acids as the surface linkages. Metallo-organic chemical vapor deposition was performed using single-source precursors ( tBU)2Ga(S2CNR2). The tert -butyl gallium bis-dialkyl-dithiocarbamate compounds, (tBu)Ga(S2CNR2)2, are formed as minor products via ligand disproportionation reactions. Gallium sulfide (GaS) thin films have been grown at 375-425°C by atmospheric pressure metal-organic chemical vapor deposition using compounds (tBu) 2Ga(S2CNMe2) and (tBu)2Ga(S 2CNEt2) as single source precursors. Polycrystalline samples of the chalcogenides InSe, In2Se3

  8. Ion Implanted GaAs I.C. Process Technology

    DTIC Science & Technology

    1981-07-01

    in ion implantation in GaAs, coupled with better control of the substrate material. 1 Once ion implantation became a reliable processing technology it... Processing Technology for Planar GaAs Integrated Circuits," GaAs IC Symposium, Lake Tahoe, CA., Sept. 1979. 20. R.C. Eden, "GaAs Integrated Circuit Device...1980. 25. B.M. Welch, "Advances in GaAs LSI!VLSI Processing Technology ," Sol. St. Tech., Feb. 1980, pp. 95-101. 27. R. Zucca, B.M. Welch, P.M

  9. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  10. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  11. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  12. Image transfer in photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory; Rau, Mann-Fu; Wang, Faa-Ching

    1987-01-01

    Image transfer from one beam to the other using counterpropagation beam coupling in GaAs was demonstrated. Good image quality was achieved. The results also reveal that local birefringence due to the residual stress/strain field in the crystal can degrade the image quality.

  13. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  14. Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

    PubMed

    Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

    2017-04-13

    Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design.

  15. Ion Implanted Gaas Integrated Optics Fabrication Technology

    NASA Astrophysics Data System (ADS)

    Mentzer, M. A.; Hunsperger, R. G.; Bartko, J.; Zavada, J. M.; Jenkinson, H. A.

    1985-01-01

    Ion implantation of semiconductor materials is a fabrication technique that offers a number of distinct advantages for the formation of guided-wave components and microelectronic devices. Implanted damage and dopants produce optical and electronic changes that can be utilized for sensing and signal processing applications. GaAs is a very attractive material for optical fabrication since it is transparent out to the far infrared. It can be used to fabricate optical waveguides, directional couplers, EO modulators, and detectors, as well as other guided wave structures. The presence of free carriers in GaAs lowers the refractive index from that of the pure semiconductor material. This depression of the refractive index is primarily due to the negative contribution of the free carrier plasma to the dielectric constant of the semiconductor. Bombardment of n-type GaAs by protons creates damage sites near the surface of the crystal structure where free carriers are trapped. This "free carrier compensated" region in the GaAs has a higher refractive index than the bulk region. If the compensated region is sufficiently thick and has a refractive index which is sufficiently larger than that of the bulk n-type region, an optical waveguide is formed. In this paper, a description of ion implantation techniques for the fabrication of both planar and channel integrated optical structures in GaAs is presented, and is related to the selection of ion species, implant energy and fluence, and to the physical processes involved. Lithographic technology and masking techniques are discussed for achieving a particular desired implant profile. Finally, the results of a set of ion implantation experiments are presented.

  16. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  17. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  18. Enhanced Efficacy of an AAV Vector Encoding Chimeric, Highly-Secreted Acid α-glucosidase in Glycogen Storage Disease Type II

    PubMed Central

    Sun, Baodong; Zhang, Haoyue; Benjamin, Daniel K.; Brown, Talmage; Bird, Andrew; Young, Sarah P.; McVie-Wylie, Alison; Chen, Y-T; Koeberl, Dwight D.

    2009-01-01

    Glycogen storage disease type II (GSD-II; Pompe disease; MIM 232300) is an inherited muscular dystrophy caused by deficiency in the activity of the lysosomal enzyme acid α-glucosidase (GAA). We hypothesized that chimeric GAA containing an alternative signal peptide could increase the secretion of GAA from transduced cells and enhance the receptor-mediated uptake of GAA in striated muscle. The relative secretion of chimeric GAA from transfected 293 cells increased up to 26-fold. Receptor-mediated uptake of secreted, chimeric GAA corrected cultured GSD-II patient cells. High-level hGAA was sustained in the plasma of GSD-II mice for 24 weeks following administration of an AAV2/8 vector encoding chimeric GAA; furthermore, GAA activity was increased and glycogen content was significantly reduced in striated muscle and in the brain. Administration of only 1×1010 vector particles increased GAA activity in the heart and diaphragm for >18 weeks, whereas 3×1010 vector particles increased GAA activity and reduced glycogen content in the heart, diaphragm, and quadriceps. Furthermore, an AAV2/2 vector encoding chimeric GAA produced secreted hGAA for >12 weeks in the majority of treated GSD-II mice. Thus, chimeric, highly secreted GAA enhanced the efficacy of AAV vector-mediated gene therapy in GSD-II mice. PMID:16987711

  19. Eight-Bit-Slice GaAs General Processor Circuit

    NASA Technical Reports Server (NTRS)

    Weissman, John; Gauthier, Robert V.

    1989-01-01

    Novel GaAs 8-bit slice enables quick and efficient implementation of variety of fast GaAs digital systems ranging from central processing units of computers to special-purpose processors for communications and signal-processing applications. With GaAs 8-bit slice, designers quickly configure and test hearts of many digital systems that demand fast complex arithmetic, fast and sufficient register storage, efficient multiplexing and routing of data words, and ease of control.

  20. LSI/VLSI Ion Implanted GaAs IC Processing

    DTIC Science & Technology

    1982-02-10

    insulating High Speed Logic Ion Implantation GaAs IC FET Integrated Circuits MESFET 20. ABSTRACT (Coalki. on.. roersie if oookay and IdoeI by WOOe tw**, This...The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the...Processing. The main objective of this program is to realize the full potential of GaAs digital integrated circuits by expanding and improving

  1. Passivation of GaAs Surfaces.

    DTIC Science & Technology

    1980-08-15

    hour at indicated temperatures. Each symbol indicates one of four pieces of the same starting crystal . Three of the pieces were treated four times. The...Each symbol indicates one of four pieces of the same starting crystal . Three of the pieces were treated three times ................................ 9... crystal 11 11. Luminescence intensity of GaAs treated in ammonia plasma at 575*C as a function of treatment time. Each symbol represents one of five

  2. High efficiency, low cost thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1982-01-01

    The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

  3. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  4. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs.

    PubMed

    Bioud, Youcef A; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-12-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  5. Efficacy of an adeno-associated virus 8-pseudotyped vector in glycogen storage disease type II.

    PubMed

    Sun, Baodong; Zhang, Haoyue; Franco, Luis M; Young, Sarah P; Schneider, Ayn; Bird, Andrew; Amalfitano, Andrea; Chen, Y-T; Koeberl, Dwight D

    2005-01-01

    Glycogen storage disease type II (GSD-II; Pompe disease) causes death in infancy from cardiorespiratory failure. The underlying deficiency of acid alpha-glucosidase (GAA; acid maltase) can be corrected by liver-targeted gene therapy in GSD-II, if secretion of GAA is accompanied by receptor-mediated uptake in cardiac and skeletal muscle. An adeno-associated virus (AAV) vector encoding human (h) GAA was pseudotyped as AAV8 (AAV2/8) and injected intravenously into immunodeficient GSD-II mice. High levels of hGAA were maintained in plasma for 24 weeks following AAV2/8 vector administration. A marked increase in vector copy number in the liver was demonstrated for the AAV2/8 vector compared to the analogous AAV2/2 vector. GAA deficiency in the heart and skeletal muscle was corrected with the AAV2/8 vector in male GSD-II mice, consistent with receptor-mediated uptake of hGAA. Male GSD-II mice demonstrated complete correction of glycogen storage in heart and diaphragm with the AAV2/8 vector, while female GSD-II mice had correction only in the heart. A biomarker for GSD-II was reduced in both sexes following AAV2/8 vector administration. Therefore, GAA production with an AAV2/8 vector in a depot organ, the liver, generated evidence for efficacious gene therapy in a mouse model for GSD-II.

  6. GaAs IMPATT diodes for microstrip circuit applications.

    NASA Technical Reports Server (NTRS)

    Wisseman, W. R.; Tserng, H. Q.; Shaw, D. W.; Mcquiddy, D. N.

    1972-01-01

    GaAs IMPATT diodes with plated heat sinks are shown to be particularly well suited for microstrip circuit applications. Details of materials growth and device fabrication procedures are given, and experimental results are presented for a GaAs IMPATT microstrip oscillator operating at X band.

  7. Panel fabrication utilizing GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  8. Enhanced response to enzyme replacement therapy in Pompe disease after the induction of immune tolerance.

    PubMed

    Sun, Baodong; Bird, Andrew; Young, Sarah P; Kishnani, Priya S; Chen, Y-T; Koeberl, Dwight D

    2007-11-01

    Pompe disease, which results from mutations in the gene encoding the glycogen-degrading lysosomal enzyme acid alpha -glucosidase (GAA) (also called "acid maltase"), causes death in early childhood related to glycogen accumulation in striated muscle and an accompanying infantile-onset cardiomyopathy. The efficacy of enzyme replacement therapy (ERT) with recombinant human GAA was demonstrated during clinical trials that prolonged subjects' overall survival, prolonged ventilator-free survival, and also improved cardiomyopathy, which led to broad-label approval by the U.S. Food and Drug Administration. Patients who lack any residual GAA expression and are deemed negative for cross-reacting immunologic material (CRIM) have a poor response to ERT. We previously showed that gene therapy with an adeno-associated virus (AAV) vector containing a liver-specific promoter elevated the GAA activity in plasma and prevented anti-GAA antibody formation in immunocompetent GAA-knockout mice for 18 wk, predicting that liver-specific expression of human GAA with the AAV vector would induce immune tolerance and enhance the efficacy of ERT. In this study, a very low number of AAV vector particles was administered before initiation of ERT, to prevent the antibody response in GAA-knockout mice. A robust antibody response was provoked in naive GAA-knockout mice by 6 wk after a challenge with human GAA and Freund's adjuvant; in contrast, administration of the AAV vector before the GAA challenge prevented the antibody response. Most compellingly, the antibody response was prevented by AAV vector administration during the 12 wk of ERT, and the efficacy of ERT was thereby enhanced. Thus, AAV vector-mediated gene therapy induced a tolerance to introduced GAA, and this strategy could enhance the efficacy of ERT in CRIM-negative patients with Pompe disease and in patients with other lysosomal storage diseases.

  9. Radioiron utilization and gossypol acetic acid in male rats

    SciTech Connect

    Tone, J.N.; Jensen, D.R.

    1985-01-01

    The 24-h incorporation of VZFe into circulating red blood cells, bone marrow, urine, liver, spleen, and skeletal muscle was measured in splenectomized and sham-splenectomized rats which had received a daily, oral dose of gossypol acetic acid (20 mg GAA/kg body wt) for 91 days. A significant decrease in total body weight gain was observed in all GAA treated animals. Splenectomized rats dosed with GAA exhibited a significant decrease in hemoglobin concentration, hematocrit and erythrocyte count. A significant increase in VZFe incorporation by red blood cells and a decrease in hepatic incorporation of VZFe indicate a preferential utilization of iron in erythropoiesis among GAA treated animals.

  10. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  11. Regeneration of a thiolated and antibody functionalized GaAs (001) surface using wet chemical processes.

    PubMed

    Lacour, Vivien; Elie-Caille, Céline; Leblois, Thérèse; Dubowski, Jan J

    2016-03-02

    Wet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This work provides an important view on the perspective of the development of a family of cost-effective GaAs-based biosensors designed for repetitive detection of a variety of biomolecules immobilized with dedicated antibody architectures.

  12. Long-term exposure to Myozyme results in a decrease of anti-drug antibodies in late-onset Pompe disease patients

    PubMed Central

    Masat, Elisa; Laforêt, Pascal; De Antonio, Marie; Corre, Guillaume; Perniconi, Barbara; Taouagh, Nadjib; Mariampillai, Kuberaka; Amelin, Damien; Mauhin, Wladimir; Hogrel, Jean-Yves; Caillaud, Catherine; Ronzitti, Giuseppe; Puzzo, Francesco; Kuranda, Klaudia; Colella, Pasqualina; Mallone, Roberto; Benveniste, Olivier; Mingozzi, Federico; Bassez, G.; Bedat-Millet, A. L.; Behin, A.; Eymard, B.; Leonard-Louis, S.; Stojkovic, T.; Canal, A.; Decostre, V.; Bouhour, F.; Boyer, F.; Castaing, Y.; Chapon, F.; Cintas, P.; Durieu, I.; Echaniz-Laguna, A.; Feasson, L.; Furby, A.; Hamroun, D.; Ferrer, X.; Solé, G.; Froissart, R.; Piraud, M.; Germain, D.; Benistan, K.; Guffon-Fouilhoux, N.; Journel, H.; Labauge, P.; Lacour, A.; Levy, A.; Magot, A.; Péréon, Y.; Minot-Myhié, M. -C.; Nadaj-Pakleza, A.; Nathier, C.; Orlikowski, D.; Pellegrini, N.; Petiot, P.; Praline, J.; Lofaso, F.; Prigent, H.; Dutry, A.; Renard, D.; Sacconi, S.; Desnuelle, C.; Salort-Campana, E.; Pouget, J.; Tiffreau, V.; Vincent, D.; Zagnoli, F.

    2016-01-01

    Immunogenicity of recombinant human acid-alpha glucosidase (rhGAA) in enzyme replacement therapy (ERT) is a safety and efficacy concern in the management of late-onset Pompe disease (LOPD). However, long-term effects of ERT on humoral and cellular responses to rhGAA are still poorly understood. To better understand the impact of immunogenicity of rhGAA on the efficacy of ERT, clinical data and blood samples from LOPD patients undergoing ERT for >4 years (n = 28) or untreated (n = 10) were collected and analyzed. In treated LOPD patients, anti-rhGAA antibodies peaked within the first 1000 days of ERT, while long-term exposure to rhGAA resulted in clearance of antibodies with residual production of non-neutralizing IgG. Analysis of  T cell responses to rhGAA showed detectable T cell reactivity only after in vitro restimulation. Upregulation of several cytokines and chemokines was detectable in both treated and untreated LOPD subjects, while IL2 secretion was detectable only in subjects who received ERT. These results indicate that long-term ERT in LOPD patients results in a decrease in antibody titers and residual production of non-inhibitory IgGs. Immune responses to GAA following long-term ERT do not seem to affect efficacy of ERT and are consistent with an immunomodulatory effect possibly mediated by regulatory T cells. PMID:27812025

  13. GaAs VLSI for aerospace electronics

    NASA Technical Reports Server (NTRS)

    Larue, G.; Chan, P.

    1990-01-01

    Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

  14. Bergamotane Sesquiterpenes with Alpha-Glucosidase Inhibitory Activity from the Plant Pathogenic Fungus Penicillium expansum.

    PubMed

    Ying, You-Min; Fang, Cheng-An; Yao, Feng-Qi; Yu, Yuan; Shen, Ying; Hou, Zhuo-Ni; Wang, Zhen; Zhang, Wei; Shan, Wei-Guang; Zhan, Zha-Jun

    2017-01-01

    Two new bergamotane sesquiterpene lactones, named expansolides C and D (1 and 2), together with two known compounds expansolides A and B (3 and 4), were isolated from the plant pathogenic fungus Penicillium expansum ACCC37275. The structures of the new compounds were established by detailed analyses of the spectroscopic data, especially 1D-, 2D-NMR, and HR-ESI-MS. In an in vitro bioassay, the epimeric mixture of expansolides C and D (1 and 2) (in a ratio of 2:1 at the temprature of the bioassay) exhibited more potent α-glucosidase inhibitory activity (IC50 =0.50 ± 0.02 mm) as compared with the positive control acarbose (IC50 = 1.90 ± 0.05 mm). To the best of our knowledge, it was the first report on the α-glucosidase inhibitory activity of bergamotane sesquiterpenes.

  15. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants.

    PubMed

    Mohiuddin, M; Arbain, D; Islam, A K M Shafiqul; Ahmad, M S; Ahmad, M N

    2016-12-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α-D-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau (Ehretis laevis), Cemumar (Micromelum pubescens), and Kedondong (Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C.

  16. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants

    NASA Astrophysics Data System (ADS)

    Mohiuddin, M.; Arbain, D.; Islam, A. K. M. Shafiqul; Ahmad, M. S.; Ahmad, M. N.

    2016-02-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α- d-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau ( Ehretis laevis), Cemumar ( Micromelum pubescens), and Kedondong ( Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C.

  17. Starch source influences dietary glucose generation at the mucosal alpha-glucosidase level

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The quality of starch digestion, related to the rate and extent of release of dietary glucose, is associated with glycemia-related problems such as diabetes and other metabolic syndrome conditions. Here, we found that the rate of glucose generation from starch is unexpectedly associated with mucosal...

  18. Metalorganic molecular beam epitaxy growth of GaAs on patterned GaAs substrates

    NASA Astrophysics Data System (ADS)

    Marx, D.; Asahi, H.; Liu, X. F.; Okuno, Y.; Inoue, K.; Gonda, S.; Shimomura, S.; Hiyamizu, S.

    1994-03-01

    GaAs layers were grown on etch-patterned (100) GaAs substrates by MOMBE (metalorganic molecular beam epitaxy) using TEGa (triethylgallium) and thermally cracked TEAs (triethylarsine). Morphology and orientation dependencies of the grown facets on the growth temperature (400-630°C) and V/III ratio (2-4) are investigated. Good morphology of grown layers was obtained on (111)A side facets at a low V/III ratio of 3 and low growth temperatures of 450-500°C. We also found strong evidence that the formation of facets is not only governed by the migration of Ga precursors and/or Ga atoms, but also by a preferential catalytic decomposition of Ga precursors on the facet edges.

  19. GaAs Surface Passivation for Device Applications.

    DTIC Science & Technology

    1982-07-01

    Protective Layers AlAs GaAs InAs As III-V AlSb GaSb InSb Sb AIP GaP InP P ZnS CdS HgS S II-Vi ZnSe CdSe HgSe Se ZnTe CdTe HgTe Te Ternaries and Quaternaries...D 4- 4- C 0331 IUMe ’xO. C .- 0. Z 00 919 . 23 3. Bulk GaAs Samples Several Bridgman grown bulk GaAs (100) samples were utilized for MIS and XPS

  20. GaAs core--shell nanowires for photovoltaic applications.

    PubMed

    Czaban, Josef A; Thompson, David A; LaPierre, Ray R

    2009-01-01

    We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

  1. Correction of multiple striated muscles in murine Pompe disease through adeno-associated virus-mediated gene therapy.

    PubMed

    Sun, Baodong; Young, Sarah P; Li, Ping; Di, Chunhui; Brown, Talmage; Salva, Maja Z; Li, Songtao; Bird, Andrew; Yan, Zhen; Auten, Richard; Hauschka, Stephen D; Koeberl, Dwight D

    2008-08-01

    Glycogen storage disease type II (Pompe disease; MIM 232300) stems from the deficiency of acid alpha-glucosidase (GAA; acid maltase; EC 3.2.1.20), which primarily involves cardiac and skeletal muscles. An adeno-associated virus 2/8 (AAV2/8) vector containing the muscle creatine kinase (MCK) (CK1) reduced glycogen content by approximately 50% in the heart and quadriceps in GAA-knockout (GAA-KO) mice; furthermore, an AAV2/8 vector containing the hybrid alpha-myosin heavy chain enhancer-/MCK enhancer-promoter (MHCK7) cassette reduced glycogen content by >95% in heart and >75% in the diaphragm and quadriceps. Transduction with an AAV2/8 vector was higher in the quadriceps than in the gastrocnemius. An AAV2/9 vector containing the MHCK7 cassette corrected GAA deficiency in the distal hindlimb, and glycogen accumulations were substantially cleared by human GAA (hGAA) expression therein; however, the analogous AAV2/7 vector achieved much lower efficacy. Administration of the MHCK7-containing vectors significantly increased striated muscle function as assessed by increased Rotarod times at 18 weeks after injection, whereas the CK1-containing vector did not increase Rotarod performance. Importantly, type IIb myofibers in the extensor digitalis longus (EDL) were transduced, thereby correcting a myofiber type that is unresponsive to enzyme replacement therapy. In summary, AAV8 and AAV9-pseudotyped vectors containing the MHCK7 regulatory cassette achieved enhanced efficacy in Pompe disease mice.

  2. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mcnally, P. J.

    1972-01-01

    Calculations of GaAs solar cell output parameters were refined and a computer model was developed for parameter optimization. The results were analyzed to determine the material characteristics required for a high efficiency solar cell. Calculated efficiencies for a P/N cell polarity are higher than an N/P cell. Both cell polarities show efficiency to have a larger dependence on short circuit current than an open circuit voltage under nearly all conditions considered. The tolerances and requirements of a cell fabrication process are more critical for an N/P type than for a P/N type cell. Several solar cell fabrication considerations relative to junction formation using ion implantation are also discussed.

  3. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  4. More About V-Grooved GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Wilt, D. M.; Landis, G. A.; Thomas, R. D.; Fatemi, N.

    1993-01-01

    NASA technical memorandum presents additional information about experimental devices described in "V-Grooved GaAs Solar Cell" (LEW-14954). Experimental V-groove cells exhibited improved optical coupling and greater short-circuit current.

  5. Interfacial Ga-As suboxide: Structural and electronic properties

    SciTech Connect

    Colleoni, Davide Pasquarello, Alfredo

    2015-07-20

    The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under consideration. The absence of As–O bonds indicates that the structure is a mixture of GaAs and Ga-oxide, in accordance with photoemission experiments. The band edges of the models are found to be closely aligned to those of GaAs. The simulation of charging and discharging processes leads to the identification of an As-related defect with an energy level at ∼0.7 eV above the GaAs valence band maximum, in good agreement with the experimental density of interface states.

  6. Enhanced annealing of GaAs solar cell radiation damage

    NASA Technical Reports Server (NTRS)

    Loo, R.; Knechtli, R. C.; Kamath, G. S.

    1981-01-01

    Solar cells are degraded by radiation damage in space. Investigations have been conducted concerning possibilities for annealing this radiation damage in GaAs solar cells, taking into account the conditions favoring such annealing. It has been found that continuous annealing as well as the combination of injection annealing with thermal annealing can lead to recovery from radiation damage under particularly favorable conditions in GaAs solar cells. The damage caused by both electrons and protons in GaAs solar cells can be substantially reduced by annealing at temperatures as low as 150 C, under appropriate conditions. This possibility makes the GaAs solar cells especially attractive for long space missions, or for missions in severe radiation environments. Attention is given to results concerning periodic thermal annealing, continuous annealing, and injection annealing combined with thermal annealing.

  7. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  8. Characteristics of GaAs with inverted thermal conversion

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

  9. Electrodeposition of Metal on GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

    2010-10-01

    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  10. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  11. Crystal Growth of Device Quality Gaas in Space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.

    1985-01-01

    The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

  12. Preparation of GaAs photocathodes at low temperature

    SciTech Connect

    Mulhollan, G.; Clendenin, J.; Tang, H.

    1996-10-01

    The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

  13. Spatial Modulation Of Light In GaAs

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory; Partovi, Afshin

    1989-01-01

    Spatial modulation of light in gallium arsenide demonstrated by transferring image from one of two coherent, crossing beams of light to other one. Technique relies on cross-polarization beam coupling, product of photorefractive effect in GaAs crystal.

  14. Air Force development of thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Masloski, K.

    1982-01-01

    The advantages of gallium arsenide (GaAs) over silicon (Si) type solar cells are well documented. However, two major disadvantages are weight and cost. Several ideas have recently surfaced that, if successful, will diminish these disadvantages. The CLEFT peeled film technique and the galicon cell are two of the more promising approaches. Low weight, low cost, high efficiency GaAs solar cell research is summarized.

  15. Preparation of Large-Diameter GaAs Crystals.

    DTIC Science & Technology

    1981-09-18

    implantation as a reliable, cost-effective fabrication technology for high-performance GaAs MESFET and integrated circuits . To address these problems, the...have been prepared by in-situ synthesis and pulled from pyrolytic boron nitride (PBN) crucibles, and improved FET channels by direct ion-implantation of...viii SUMMARY Significant progress has been made toward developing large- diai.3ter, semi-insulating GaAs crystals of improved quality by LEC growth for

  16. Characterisation of semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

    1982-01-01

    Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

  17. Spectroscopy of GaAs quantum wells

    SciTech Connect

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  18. Digestibility and metabolism of dietary guanidino acetic acid fed to broilers.

    PubMed

    Tossenberger, J; Rademacher, M; Németh, K; Halas, V; Lemme, A

    2016-09-01

    In two feeding experiments the retention of supplemental guanidine acetic acid (GAA) in broilers was investigated. In both experiments, the same three treatments were used; the basal feed was supplemented with 0, 0.6, or 6.0 g GAA per kg of feed. While in a growth study (experiment 1) day-old, male Ross 308 broilers were fed diets for 35 days, these diets were fed for only 8 days to fistulated broilers 34 days of age in a balance study (experiment 2). Feeding 0.6 g/kg GAA did not improve growth performance whereas 6.0 g/kg GAA resulted in a reduction of feed consumption and consequently of weight gain (P ≤ 0.05). Feed conversion was not affected and was 1.48 to 1.49 in all treatments. Increasing levels of dietary GAA gradually increased the creatine concentration in breast muscle and liver tissues (P ≤ 0.05) indicating a transformation and retention of dietary GAA as creatine. In experiment 2 the non-supplemented basal diet allowed us to determine the endogenous GAA, creatine, and creatinine excretions. Accordingly, only small amounts of these metabolites were recovered in feces while they were much higher in urine. Increasing dietary GAA intake increased fecal and renal GAA, creatine, and creatinine excretion and was significant (P ≤ 0.05) at 6.0 g/kg dietary GAA compared to no or 0.6 g/kg GAA supplementation. The mean true fecal digestibility of GAA (99%) was unaffected by the level of supplemental GAA. Considering renal GAA excretions, true availability of supplemental GAA was reduced with increasing dose (83% vs. 71%; P ≤ 0.05). Taking into account creatine and creatinine excretions above those of the basal diet, as they are a consequence of increasing dietary supply, true availability of supplemental GAA shrank from 76% (0.6 g/kg GAA) to 46% (6.0 g/kg GAA; P ≤ 0.05). Changes in blood creatine and creatinine levels reflected the changes observed in the liver and muscle tissues and may suggest increased transport to excretion organs. Data from these

  19. Cross-reactive immunologic material status affects treatment outcomes in Pompe disease infants

    PubMed Central

    Kishnani, Priya S.; Goldenberg, Paula C.; DeArmey, Stephanie L.; Heller, James; Benjamin, Danny; Young, Sarah; Bali, Deeksha; Smith, Sue Ann; Li, Jennifer S.; Mandel, Hanna; Koeberl, Dwight; Rosenberg, Amy; Chen, Y-T

    2013-01-01

    Deficiency of acid alpha glucosidase (GAA) causes Pompe disease, which is usually fatal if onset occurs in infancy. Patients synthesize a non-functional form of GAA or are unable to form native enzyme. Enzyme replacement therapy with recombinant human GAA (rhGAA) prolongs survival in infantile Pompe patients but may be less effective in cross-reactive immunologic material (CRIM)-negative patients. We retrospectively analyzed the influence of CRIM status on outcome in 21 CRIM-positive and 11 CRIM-negative infantile Pompe patients receiving rhGAA. Patients were from the clinical setting and from clinical trials of rhGAA, were ≤6 months of age, were not invasively ventilated, and were treated with IV rhGAA at a cumulative or total dose of 20 or 40 mg/kg/2 weeks. Outcome measures included survival, invasive ventilator-free survival, cardiac status, gross motor development, development of antibodies to rhGAA, and levels of urinary Glc4. Following 52 weeks of treatment, 6/11 (54.5%) CRIM-negative and 1/21 (4.8%) CRIM-positive patients were deceased or invasively ventilated (p < 0.0001). By age 27.1 months, all CRIM-negative patients and 4/21 (19.0%) CRIM-positive patients were deceased or invasively ventilated. Cardiac function and gross motor development improved significantly more in the CRIM-positive group. IgG antibodies to rhGAA developed earlier and serotiters were higher and more sustained in the CRIM-negative group. CRIM-negative status predicted reduced overall survival and invasive ventilator-free survival and poorer clinical outcomes in infants with Pompe disease treated with rhGAA. The effect of CRIM status on outcome appears to be mediated by antibody responses to the exogenous protein. PMID:19775921

  20. Cross-reactive immunologic material status affects treatment outcomes in Pompe disease infants.

    PubMed

    Kishnani, Priya S; Goldenberg, Paula C; DeArmey, Stephanie L; Heller, James; Benjamin, Danny; Young, Sarah; Bali, Deeksha; Smith, Sue Ann; Li, Jennifer S; Mandel, Hanna; Koeberl, Dwight; Rosenberg, Amy; Chen, Y-T

    2010-01-01

    Deficiency of acid alpha glucosidase (GAA) causes Pompe disease, which is usually fatal if onset occurs in infancy. Patients synthesize a non-functional form of GAA or are unable to form native enzyme. Enzyme replacement therapy with recombinant human GAA (rhGAA) prolongs survival in infantile Pompe patients but may be less effective in cross-reactive immunologic material (CRIM)-negative patients. We retrospectively analyzed the influence of CRIM status on outcome in 21 CRIM-positive and 11 CRIM-negative infantile Pompe patients receiving rhGAA. Patients were from the clinical setting and from clinical trials of rhGAA, were 6 months of age, were not invasively ventilated, and were treated with IV rhGAA at a cumulative or total dose of 20 or 40 mg/kg/2 weeks. Outcome measures included survival, invasive ventilator-free survival, cardiac status, gross motor development, development of antibodies to rhGAA, and levels of urinary Glc(4). Following 52 weeks of treatment, 6/11 (54.5%) CRIM-negative and 1/21 (4.8%) CRIM-positive patients were deceased or invasively ventilated (p<0.0001). By age 27.1 months, all CRIM-negative patients and 4/21 (19.0%) CRIM-positive patients were deceased or invasively ventilated. Cardiac function and gross motor development improved significantly more in the CRIM-positive group. IgG antibodies to rhGAA developed earlier and serotiters were higher and more sustained in the CRIM-negative group. CRIM-negative status predicted reduced overall survival and invasive ventilator-free survival and poorer clinical outcomes in infants with Pompe disease treated with rhGAA. The effect of CRIM status on outcome appears to be mediated by antibody responses to the exogenous protein.

  1. Vertical zone melt growth of GaAs

    SciTech Connect

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  2. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 8 2010-10-01 2010-10-01 false Operation under current GAA/MSTS Southeast Asia Program... AUTHORITY VOYAGE DATA Sec. 7 Operation under current GAA/MSTS Southeast Asia Program. In order to adapt the provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast...

  3. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 8 2011-10-01 2011-10-01 false Operation under current GAA/MSTS Southeast Asia Program... AUTHORITY VOYAGE DATA Sec. 7 Operation under current GAA/MSTS Southeast Asia Program. In order to adapt the provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast...

  4. Transient GaAs plasmonic metasurfaces at terahertz frequencies

    SciTech Connect

    Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; Liu, Sheng; Reno, John L.; Sinclair, Michael B.; Prasankumar, Rohit P.; Brener, Igal

    2016-12-09

    Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

  5. Shallow-homojunction GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1979-01-01

    Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.

  6. Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

    PubMed

    Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

    2011-02-09

    We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

  7. Biomimetic subwavelength antireflective gratings on GaAs.

    PubMed

    Sun, Chih-Hung; Ho, Brian J; Jiang, Bin; Jiang, Peng

    2008-10-01

    We have developed a simple and scalable bottom-up approach for fabricating moth-eye antireflective coatings on GaAs substrates. Monolayer, non-close-packed silica colloidal crystals are created on crystalline GaAs wafers by a spin-coating-based single-layer reduction technique. These colloidal monolayers can be used as etching masks during a BCl(3) dry-etch process to generate subwavelength-structured antireflective gratings directly on GaAs substrates. The gratings exhibit excellent broadband antireflective properties, and the specular reflection matches with the theoretical prediction using a rigorous coupled-wave analysis model. These bioinspired antireflection coatings have important technological applications ranging from efficient solar cells to IR detectors.

  8. Growth of silver nanowires on GaAs wafers.

    PubMed

    Sun, Yugang

    2011-05-01

    Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO(3)) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electrons in the semi-insulating GaAs wafers that can lead to the formation of a low-density of nuclei that facilitate their anisotropic growth into nanowires. The resulting Ag nanowires exhibit rough surfaces and reasonably good electric conductivity. These characteristics are beneficial to sensing applications based on single-nanowire surface-enhanced Raman scattering (SERS) and possible surface-adsorption-induced conductivity variation.

  9. Characterization of production GaAs solar cells for space

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1988-01-01

    The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.

  10. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  11. Oxygen in GaAs - Direct and indirect effects

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

    1984-01-01

    Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

  12. Studies of electron spin in GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Craft, Daniel; Colton, John; Park, Tyler; White, Phil

    2013-03-01

    We have studied electron spins in GaAs quantum dots with a pump-probe technique that normally yields the T1 spin lifetime, the time required for initially polarized electrons to relax and randomize. Using a circularly polarized laser tuned to the wavelength response of the quantum dot we can ``pump'' the spins into alignment. After aligning the spins we can detect them using a second, linearly polarized ``probe'' laser. By changing the delay between the two lasers we can trace out the spin response over time. In contrast with other samples (bulk GaAs and a GaAs quantum well), where the spin response decayed exponentially with time, initial data on the quantum dots has shown an unexpected, oscillating behavior which dies out on the order of 700 ns, independent of both temperature and magnetic field.

  13. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  14. Interface demarcation in GaAs by current pulsing

    NASA Technical Reports Server (NTRS)

    Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

    1990-01-01

    GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

  15. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Zwerdling, S.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

  16. Ganoderic Acid A Metabolites and Their Metabolic Kinetics.

    PubMed

    Cao, Fang-Rui; Feng, Li; Ye, Lin-Hu; Wang, Li-Sha; Xiao, Bing-Xin; Tao, Xue; Chang, Qi

    2017-01-01

    Ganoderic acid A (GAA), a representative active triterpenoid from Ganoderma lucidum, has been reported to exhibit antinociceptive, antioxidative, cytotoxic, hepatoprotective and anticancer activities. The present study aims (1) to identify GAA metabolites, in vivo by analyzing the bile, plasma and urine after intravenous administration to rats (20 mg/kg), and in vitro by incubating with rat liver microsomes (RLMs) and human liver microsomes (HLMs); (2) to investigate the metabolic kinetics of main GAA metabolites. Using HPLC-DAD-MS/MS techniques, a total of 37 metabolites were tentatively characterized from in vivo samples based on their fragmentation behaviors. The metabolites detected in in vitro samples were similar to those found in vivo. GAA underwent extensive phase I and II metabolism. The main metabolic soft spots of GAA were 3, 7, 11, 15, 23-carbonyl groups (or hydroxyl groups) and 12, 20, 28 (29)-carbon atoms. Ganoderic acid C2 (GAC2) and 7β,15-dihydroxy-3,11,23-trioxo-lanost-26-oic acid were two main reduction metabolites of GAA, and their kinetics followed classical hyperbolic kinetics. The specific isoenzyme responsible for the biotransformation of the two metabolites in RLMs and HLMs was CYP3A. This is the first report on the comprehensive metabolism of GAA, as well as the metabolic kinetics of its main metabolites.

  17. Ganoderic Acid A Metabolites and Their Metabolic Kinetics

    PubMed Central

    Cao, Fang-Rui; Feng, Li; Ye, Lin-Hu; Wang, Li-Sha; Xiao, Bing-Xin; Tao, Xue; Chang, Qi

    2017-01-01

    Ganoderic acid A (GAA), a representative active triterpenoid from Ganoderma lucidum, has been reported to exhibit antinociceptive, antioxidative, cytotoxic, hepatoprotective and anticancer activities. The present study aims (1) to identify GAA metabolites, in vivo by analyzing the bile, plasma and urine after intravenous administration to rats (20 mg/kg), and in vitro by incubating with rat liver microsomes (RLMs) and human liver microsomes (HLMs); (2) to investigate the metabolic kinetics of main GAA metabolites. Using HPLC-DAD-MS/MS techniques, a total of 37 metabolites were tentatively characterized from in vivo samples based on their fragmentation behaviors. The metabolites detected in in vitro samples were similar to those found in vivo. GAA underwent extensive phase I and II metabolism. The main metabolic soft spots of GAA were 3, 7, 11, 15, 23-carbonyl groups (or hydroxyl groups) and 12, 20, 28 (29)-carbon atoms. Ganoderic acid C2 (GAC2) and 7β,15-dihydroxy-3,11,23-trioxo-lanost-26-oic acid were two main reduction metabolites of GAA, and their kinetics followed classical hyperbolic kinetics. The specific isoenzyme responsible for the biotransformation of the two metabolites in RLMs and HLMs was CYP3A. This is the first report on the comprehensive metabolism of GAA, as well as the metabolic kinetics of its main metabolites. PMID:28326038

  18. Atomic Structure of the Stoichiometric GaAs(114) Surface.

    PubMed

    Márquez; Kratzer; Geelhaar; Jacobi; Scheffler

    2001-01-01

    The stoichiometric GaAs(114) surface has been prepared using molecular beam epitaxy followed by annealing in ultrahigh vacuum. Based on in situ scanning tunneling microscopy measurements and first-principles electronic-structure calculations, we determine the surface reconstruction which we call alpha2(2x1). Contrary to what is expected for a high-index surface, it is surprisingly elementary. The (2x1) unit cell contains two As dimers and two rebonded Ga atoms. The surface energy is calculated as 53 meV/Å(2), which falls well within the range of low-index GaAs surface energies.

  19. Graphitized carbon on GaAs(100) substrates

    SciTech Connect

    Simon, J.; Simmonds, P. J.; Lee, M. L.; Woodall, J. M.

    2011-02-14

    We report on the formation of graphitized carbon on GaAs(100) surfaces by molecular beam epitaxy. We grew highly carbon-doped GaAs on AlAs, which was then thermally etched in situ leaving behind carbon atoms on the surface. After thermal etching, Raman spectra revealed characteristic phonon modes for sp{sup 2}-bonded carbon, consistent with the formation of graphitic crystallites. We estimate that the graphitic crystallites are 1.5-3 nm in size and demonstrate that crystallite domain size can be increased through the use of higher etch temperatures.

  20. Modelling of interband transitions in GaAs tunnel diode

    NASA Astrophysics Data System (ADS)

    Louarn, K.; Fontaine, C.; Arnoult, A.; Olivié, F.; Lacoste, G.; Piquemal, F.; Bounouh, A.; Almuneau, G.

    2016-06-01

    In this paper, an improved model for non-local band-to-band tunneling carrier transport is presented and compared to experimental measurement from GaAs tunnel junctions devices. By carefully taking into account the coupling between the conduction band and the light holes valence band, the model is able to predict, with realistic material parameters, the amplitude of the current density throughout the whole tunneling regime. The model suggests that elastic band-to-band tunneling instead of trap-assisted-tunneling is the predominant mechanism in GaAs tunnel junctions, which is of great interest for better understanding and improving III-V multi-junction solar cells.

  1. GaAs solar cells with V-grooved emitters

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Fatemi, N.; Wilt, D. M.; Landis, G. A.; Thomas, R. D.

    1989-01-01

    A GaAs solar cell with a V-grooved front surface is described. It shows improved optical coupling and higher short-circuit current compared to planar cells. The GaAs homojunction cells, manufactured by OrganoMetallic Chemical Vapor Deposition (OMCVD), are described. The V-grooves were formed by anisotropic etching. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

  2. Experience with OMCVD production of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Iles, P. A.; Ho, P.; Ling, K. S.

    1985-01-01

    The projected promise of the OMCVD approach, i.e., to make high efficiency GaAs space cells, has been demonstrated. The properties and control of the deposited GaAs and AlGaAs layers and the uniformity of the post layer processing have been most satisfactory. In particular the control of the critical thin layers (p-GaAs, p-AlGaAs) has been impressive. Experience has also been gained in routine areas, connected with continuous operation at high capacity. There are still a few areas for improvement, to further increase capacity, and to anticipate and prevent mechanical equipment problems.

  3. Investigation of high efficiency GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

    1989-01-01

    Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

  4. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  5. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  6. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  7. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  8. Defect interactions in GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

  9. Crystal growth of GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Pawlowicz, L. M.; Dabkowski, F.; Li, C. J.

    1984-01-01

    It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

  10. MBE Growth of GaAs Whiskers on Si Nanowires

    NASA Astrophysics Data System (ADS)

    Maxwell Andrews, Aaron; Klang, Pavel; Detz, Hermann; Lugstein, Alois; Schramböck, Matthias; Steinmair, Mathias; Hyun, Youn-Joo; Bertagnolli, Emmerich; Müller, Thomas; Unterrainer, Karl; Schrenk, Werner; Strasser, Gottfried

    2010-01-01

    We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {112} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

  11. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  12. Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

    NASA Astrophysics Data System (ADS)

    Jacobi, K.; Geelhaar, L.; Márquez, J.

    We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

  13. Photoelectrical characteristics of as-grown highresistance GaAs single crystals

    NASA Astrophysics Data System (ADS)

    Budnitskii, D. L.; Koretskaya, O. B.; Tolbanov, O. P.; Tyazhev, A. V.

    2010-06-01

    The electrophysical and photoelectrical properties of high-resistance GaAs produced by single crystal growth are studied and analyzed. The electron (τ n ) and hole (τ p ) lifetimes are estimated. The charge-carrier lifetimes are compared in as-grown and diffusion high-resistance GaAs. The conclusion is made that in high-resistance GaAs produced by chromium diffusion, the charge-carrier recombination mechanism qualitatively differs from that in as-grown GaAs. The charge-carrier recombination in diffusion GaAs is determined by the occurrence of recombination barriers due to chromium diffusion.

  14. Microscopic determination of stress distribution in GaAs grown at low temperature on GaAs (100)

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; Tanaka, M.; Ishikawa, A.; Teriauchi, M.

    1991-01-01

    A microscopic strain distribution across commensurate interfaces between GaAs layers grown on semi-insulating GaAs substrates was observed by means of convergent beam electron diffraction (CBED) and large angle convergent beam methods (LACBED). Strain relaxation at a specific distance from the interface was observed in these layers without formation of misfit dislocations. It was proposed that specific point defects distributed close to the interface can explain the asymmetric broadening of high-order Laue zone (HOLZ) lines in the CBED patterns.

  15. Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

    PubMed

    Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt

    2010-05-14

    We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

  16. A single session of exhaustive exercise markedly decreases circulating levels of guanidinoacetic acid in healthy men and women.

    PubMed

    Stajer, Valdemar; Trivic, Tatjana; Drid, Patrik; Vranes, Milan; Ostojic, Sergej M

    2016-07-19

    We evaluated the effects of exercise on circulating concentrations of guanidinoacetic acid (GAA) and creatine in 23 healthy volunteers subjected to running to exhaustion and free-weight bench-press to volitional failure. Blood was taken before and following each exercise session. Running induced a significant decrease in serum GAA by 20.1% (P < 0.001), while free-weight exercise reduced GAA by 11.7% (P < 0.001), suggesting the possible use of serum GAA as a novel biomarker of exhaustion.

  17. Present status of GaAs. [including space processing and solid state applications

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Jastrzebski, L.

    1979-01-01

    An extensive literature survey on GaAs was carried out for the period December 31, 1970, to December 31, 1977. The increasing interest in GaAs device structures increased steadily during that period. The leading research and development centers and the specific areas of interest were identified. A workshop on GaAs was held in November 1977 to assess the present status of melt-grown GaAs and the existing needs for reliable chemical, structural, and electronic characterization methods. It was concluded that the present available bulk GaAs crystals are of poor quality and that GaAs technology is lagging demonstrated or potentially feasible GaAs devices and systems.

  18. ZnSe Films in GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Kachare, Ram H.

    1987-01-01

    ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.

  19. Measuring Carrier Lifetime in GaAs by Luminescence

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1986-01-01

    Luminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.

  20. The 20 GHz power GaAs FET development

    NASA Technical Reports Server (NTRS)

    Crandell, M.

    1986-01-01

    The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

  1. V-Grooved GaAs Solar Cell

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Landis, G. R.; Wilt, D. M.; Thomas, R. D.; Arrison, A.; Fatemi, N. S.

    1991-01-01

    V-grooved GaAs solar photovoltaic cells increase optical coupling and greater conversion of light into electricity. Increases both trapping of incident light and lengths of optical paths in cell material. Net effect increases in total absorptivity, tolerance to damage by energetic particles, and short-circuit current. These improvements expected to follow from similar improvements obtained in silicon solar cells.

  2. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  3. CLEFT Process for GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.; Bozler, C. O.; Mcclelland, R. W.

    1983-01-01

    CLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost.

  4. Status of GaAs solar cell production

    NASA Technical Reports Server (NTRS)

    Yeh, Milton; Ho, Frank; Iles, Peter A.

    1989-01-01

    Recent experience in producing GaAs solar cells, to meet the full requirements of space-array manufacturers is reviewed. The main problems have been in extending MOCVD technology to provide high throughput of high quality epitaxial layers, and to integrate the other important factors needed to meet the full range of user requirements. Some discussion of evolutionary changes is also given.

  5. Gallium arsenide (GaAs) power conversion concept

    NASA Technical Reports Server (NTRS)

    Nussberger, A. A.

    1980-01-01

    A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

  6. Ballistic thermal point contacts made of GaAs nanopillars

    SciTech Connect

    Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W.

    2013-12-04

    We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

  7. High purity, low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1983-01-01

    Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

  8. GaAs MESFET with lateral non-uniform doping

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    An analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for linear lateral doping profile are given as a special case. Theoretical considerations predict that better device linearity and improved F(T) can be obtained by using linear lateral doping when doping density increases from source to drain.

  9. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  10. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films

    NASA Astrophysics Data System (ADS)

    Wood, Adam W.; Collar, Kristen; Li, Jincheng; Brown, April S.; Babcock, Susan E.

    2016-03-01

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs1-x Bi x using high angle annular dark field (‘Z-contrast’) imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ˜GaAs embedded in the GaAs1-x Bi x epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (˜4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ˜GaAs to GaAs1-x Bi x appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ˜25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs1-x Bi x film growth.

  11. Immunomodulatory gene therapy prevents antibody formation and lethal hypersensitivity reactions in murine pompe disease.

    PubMed

    Sun, Baodong; Kulis, Michael D; Young, Sarah P; Hobeika, Amy C; Li, Songtao; Bird, Andrew; Zhang, Haoyue; Li, Yifan; Clay, Timothy M; Burks, Wesley; Kishnani, Priya S; Koeberl, Dwight D

    2010-02-01

    Infantile Pompe disease progresses to a lethal cardiomyopathy in absence of effective treatment. Enzyme-replacement therapy (ERT) with recombinant human acid alpha-glucosidase (rhGAA) has been effective in most patients with Pompe disease, but efficacy was reduced by high-titer antibody responses. Immunomodulatory gene therapy with a low dose adeno-associated virus (AAV) vector (2 x 10(10) particles) containing a liver-specific regulatory cassette significantly lowered immunoglobin G (IgG), IgG1, and IgE antibodies to GAA in Pompe disease mice, when compared with mock-treated mice (P < 0.05). AAV-LSPhGAApA had the same effect on GAA-antibody production whether it was given prior to, following, or simultaneously with the initial GAA injection. Mice given AAV-LSPhGAApA had significantly less decrease in body temperature (P < 0.001) and lower anaphylactic scores (P < 0.01) following the GAA challenge. Mouse mast cell protease-1 (MMCP-1) followed the pattern associated with hypersensitivity reactions (P < 0.05). Regulatory T cells (Treg) were demonstrated to play a role in the tolerance induced by gene therapy as depletion of Treg led to an increase in GAA-specific IgG (P < 0.001). Treg depleted mice were challenged with GAA and had significantly stronger allergic reactions than mice given gene therapy without subsequent Treg depletion (temperature: P < 0.01; symptoms: P < 0.05). Ubiquitous GAA expression failed to prevent antibody formation. Thus, immunomodulatory gene therapy could provide adjunctive therapy in lysosomal storage disorders treated by enzyme replacement.

  12. The pharmacological chaperone AT2220 increases recombinant human acid α-glucosidase uptake and glycogen reduction in a mouse model of Pompe disease.

    PubMed

    Khanna, Richie; Flanagan, John J; Feng, Jessie; Soska, Rebecca; Frascella, Michelle; Pellegrino, Lee J; Lun, Yi; Guillen, Darlene; Lockhart, David J; Valenzano, Kenneth J

    2012-01-01

    Pompe disease is an inherited lysosomal storage disease that results from a deficiency in the enzyme acid α-glucosidase (GAA), and is characterized by progressive accumulation of lysosomal glycogen primarily in heart and skeletal muscles. Recombinant human GAA (rhGAA) is the only approved enzyme replacement therapy (ERT) available for the treatment of Pompe disease. Although rhGAA has been shown to slow disease progression and improve some of the pathophysiogical manifestations, the infused enzyme tends to be unstable at neutral pH and body temperature, shows low uptake into some key target tissues, and may elicit immune responses that adversely affect tolerability and efficacy. We hypothesized that co-administration of the orally-available, small molecule pharmacological chaperone AT2220 (1-deoxynojirimycin hydrochloride, duvoglustat hydrochloride) may improve the pharmacological properties of rhGAA via binding and stabilization. AT2220 co-incubation prevented rhGAA denaturation and loss of activity in vitro at neutral pH and 37°C in both buffer and blood. In addition, oral pre-administration of AT2220 to rats led to a greater than two-fold increase in the circulating half-life of intravenous rhGAA. Importantly, co-administration of AT2220 and rhGAA to GAA knock-out (KO) mice resulted in significantly greater rhGAA levels in plasma, and greater uptake and glycogen reduction in heart and skeletal muscles, compared to administration of rhGAA alone. Collectively, these preclinical data highlight the potentially beneficial effects of AT2220 on rhGAA in vitro and in vivo. As such, a Phase 2 clinical study has been initiated to investigate the effects of co-administered AT2220 on rhGAA in Pompe patients.

  13. Fabrication of GaAs subwavelength structure (SWS) for solar cell applications.

    PubMed

    Kim, Byung-Jae; Kim, Jihyun

    2011-05-09

    We developed a novel GaAs subwavelength structure (SWS) as an antireflective layer for solar cell applications. The GaAs SWS patterns were fabricated by a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). The shape and height of the GaAs SWS were controlled by the diameter of the SiO2 nanospheres and the etching time. Various GaAs SWS were characterized by the reflectance spectra. The average reflectance of the polished GaAs substrate from 200nm to 800nm was 35.1%. However, the average reflectance of the tapered GaAs SWS was reduced to 0.6% due to scattering and moth-eye effects.

  14. Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

    NASA Technical Reports Server (NTRS)

    Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

    1988-01-01

    GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

  15. Testing a GaAs cathode in SRF gun

    SciTech Connect

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  16. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  17. GaAs solar cells for laser power beaming

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Huber, Daniel A.; Addis, F. William; Anheier, Norman; Coomes, E. P.

    1991-01-01

    Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. This work was motivated primarily by interests in space-tp-space power beaming applications. In particular, the Battelle Pacific Northwest Laboratories is conducting studies of the utilization of power beaming for several future space missions. Modeling calculations of GaAs cell performance were carried out using PC-1D to determine an appropriate design for a p/n cell structure. Epitaxial wafers were grown by MOCVD and cells fabricated at WSU Tri-Cities. Under simulated conditions, an efficiency of 53 percent was achieved for a cell coupled to 806 nm light at 400 mW/sq cm.

  18. A V-grooved GaAs solar cell

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Fatemi, N. S.; Landis, G. A.; Wilt, D. M.; Thomas, R. D.; Arrison, A.

    1988-01-01

    V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

  19. A V-grooved GaAs solar cell

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Fatemi, N.; Landis, G. A.; Wilt, D. M.; Thomas, R. D.; Arrison, A.

    1988-01-01

    V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and incrased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n-epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing an MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reflectance of the microgrooved cell compared to the planar structure. The short-circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

  20. Structure and diffusion in simulated liquid GaAs

    NASA Astrophysics Data System (ADS)

    Hanh, T. T. T.; Hoang, V. V.

    2010-03-01

    Structure and diffusion of Ga and As ions in simulated liquid GaAs have been studied in a model containing 3000 ions under periodic boundary conditions via molecular dynamics simulation (MD). The microstructure of systems has been analyzed through partial radial distribution functions (PRDFs), coordination number distributions, bond-angle distributions and interatomic distances. We found that calculated data agree well with the experimental ones. Temperature dependence of these distributions was obtained. Caculations show that liquid GaAs model with a real density at 5.3176 g cm-3 has a distorted tetrahedral network structure with the mean coordination number ZAs-Ga ≈ 4. Diffusion constant D in system has been calculated over temperatures ranged from 5000 K down to 1500 K. Calculations show that the temperature dependence of the diffusion constant D shows an Arrhenius law at relatively low temperatures above the melting point and it shows a power law, D˜ (T - Tc)γ, at higher temperatures.

  1. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  2. Slow domains in semi-insulating GaAs

    SciTech Connect

    Neumann, A.

    2001-07-01

    Semi-insulating GaAs shows current oscillations if a high dc voltage is applied to a sample. These oscillations are caused by traveling high-electric-field domains that are formed as a result of electric-field-enhanced electron trapping. This article describes the various types of experiments that have been carried out with this system, including recent ones that use the electro-optic Pockels effect in order to measure the local electric fields in the sample in a highly accurate manner. An historical overview of the theoretical developments is given and shows that no satisfying theory is currently available. A list of all the required ingredients for a successful theory is provided and the experimental data are explained in a qualitative manner. Furthermore, the main electron trap in semi-insulating GaAs is the native defect EL2, the main properties of which are described. {copyright} 2001 American Institute of Physics.

  3. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  4. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1989-01-01

    The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

  5. Experimental examination of gaas dissolution in in-p melt

    NASA Astrophysics Data System (ADS)

    Bolkhovityanov, Yu. B.; Bolkhovityanova, R. I.; Chikichev, S. I.

    1983-05-01

    The “solubility” of GaAs crystals in quaternary In-Ga-As-P liquids (X{Ga/I} = X{As/I}) has been studied experi-mentally at 770°C using seed-dissolution technique. The location of the true liquidus isotherm has been established independently by means of the direct vi-sual observation technique. Comparison between the two data sets indicates that the first method can be successfully used only for those In-Ga-As-P melt compositions which have the corresponding solid InxGa1-xAsyP1-y alloys nearly lattice-matched to the GaAs substrate. In other cases the results obtained by this method are totally misleading although in-teresting as they are. The phenomenon of “catastro-phic” substrate erosion is investigated. The results of the present study are interpreted within the conceptual framework developed previously.

  6. Single Material Band Gap Engineering in GaAs Nanowires

    SciTech Connect

    Spirkoska, D.; Abstreiter, G.; Efros, A.; Conesa-Boj, S.; Morante, J. R.; Arbiol, J.; Fontcuberta i Morral, A.

    2011-12-23

    The structural and optical properties of GaAs nanowire with mixed zinc-blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc-blende or wurtzite crystal phases. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV. The downward shift of the emission peaks can be understood by carrier confinement at the wurtzite/zinc-blende heterojunction, in quantum wells and in random short period superlattices existent in these nanowires, assuming the theoretical staggered band-offset between wurtzite and zinc-blende GaAs.

  7. Optical detectors for GaAs MMIC integration - Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  8. High purity low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1982-01-01

    Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

  9. The GaAs solar cell research and development programs of the Air Force

    NASA Technical Reports Server (NTRS)

    Masloski, K. T.

    1980-01-01

    The compound GaAs is of interest for space application photovoltaics due to its inherent advantages over silicon. Higher efficiencies, superior radiation hardness, and a greater temperature resistance are the major advantages of GaAs over Si. Air Force programs look for ways of maximizing these advantages while minimizing disadvantages such as higher costs and weights. Four programs in GaAs photovoltaics are described and each program is discussed in terms of its objective, approach and status.

  10. Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell

    DTIC Science & Technology

    2014-09-01

    Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell by Naresh C Das ARL-TR-7054 September 2014...September 2014 Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell Naresh C Das Sensors and Electron...From - To) 01/02/2014–07/15/2014 4. TITLE AND SUBTITLE Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell 5a

  11. Raman-scattering probe of anharmonic effects in GaAs

    NASA Astrophysics Data System (ADS)

    Verma, Prabhat; Abbi, S. C.; Jain, K. P.

    1995-06-01

    A comparative study of anharmonic effects in various structural forms of GaAs, namely crystalline, disordered and ion-implanted, and pulse laser annealed (PLA), using temperature-dependent Raman scattering, is reported for various phonon modes over the temperature range 10-300 K. The disordered and PLA samples are found to have greater anharmonicity than crystalline GaAs. The localized vibrational mode in PLA GaAs shows shorter relaxation time than the LO-phonon mode.

  12. Improved GaAs solar cells with very thin junctions

    NASA Technical Reports Server (NTRS)

    Hovel, H. J.; Woodall, J. M.

    1976-01-01

    Violet cells with 500-1000 A junction depths have been made in GaAs by narrow junction diffusion followed by anodization. The best AM0 efficiencies obtained by this technique have been 10.5% (14% at AM1). GaAlAs-GaAs structures with very thin GaAlAs layers are much more promising, and efficiencies of over 18% at AM0 have been measured (21.9% at AM1).

  13. On the dissolution properties of GaAs in Ga

    NASA Technical Reports Server (NTRS)

    Davidson, M. C.; Moynahan, A. H.

    1977-01-01

    The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

  14. Solar heating of GaAs nanowire solar cells.

    PubMed

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  15. Gallium arsenide (GaAs) solar cell modeling studies

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.

    1980-01-01

    Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

  16. Radiation damage in GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Conway, E. J.; Walker, G. H.

    1979-01-01

    Recent results of electron and proton irradiation and annealing of GaAs solar cells are presented along with some implications of these results. A comparison between the energy-levels produced by protons and by electrons which are not stopped in the material indicate that the damage produced by protons and electrons may be qualitatively different. Thus, annealing of proton damage may be very different from the annealing of electron damage.

  17. Monolithic GaAs surface acoustic wave chemical microsensor array

    SciTech Connect

    HIETALA,VINCENT M.; CASALNUOVO,STEPHEN A.; HELLER,EDWIN J.; WENDT,JOEL R.; FRYE-MASON,GREGORY CHARLES; BACA,ALBERT G.

    2000-03-09

    A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.

  18. GaAs Concentrator Photovoltaic Power System Feasibility Investigation.

    DTIC Science & Technology

    1977-12-01

    cells at high intensity levels by permitting testing in a controlled thermal environment without the thermal problems ( heat flux) inherent with...multisun steady state simulation; i.e., the bulk cell temperature is constant and controlled by the backs de- heating /cooling block of the test fixture...determine the efficiency of the GaAs cells at various temperatures. Thus, the cells will be mounted on a small, thermocouple-equipped heat sink block

  19. Vacancy-associated Te sites in GaAs

    NASA Astrophysics Data System (ADS)

    Wuyts, K.; Langouche, G.; van Rossum, M.; Silverans, R. E.

    1992-03-01

    Defect structures, observed by 129I Mössbauer spectroscopy in high-dose Te-doped GaAs, are identified by a reference study of the semiconducting compound Ga2Te3. The formation of TeAs-VGa complexes (tellurium atoms quasisubstitutional on an As site with a gallium vacancy in the first-neighbor shell) is proposed, in agreement with theoretical predictions. The relevance of this assignment in relation to the earlier proposed Te DX configuration is also discussed.

  20. Diboride diffusion barriers in silicon and GaAs technology

    NASA Astrophysics Data System (ADS)

    Shappirio, J. R.; Finnegan, J. J.; Lux, R. A.

    1986-12-01

    The synthesis and properties of a new class of contact compounds, the transition metal borides, are described. The effectiveness of the contact compounds as diffusion barriers when used to separate silicon from second level aluminum metallization is evaluated. Bulk and thin film resistivity and melting point data for disilicides and diborides are compared. The application of ZrB2 and TiB2 diffusion barriers to achieve stable ohmic contacts to n-type GaAs is discussed.

  1. A high-speed GaAs MESFET optical controller

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.; Richard, M.; Bendett, M.; Gustafson, G.

    1989-01-01

    Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

  2. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  3. Analysis of optical absorption in GaAs nanowire arrays.

    PubMed

    Guo, Haomin; Wen, Long; Li, Xinhua; Zhao, Zhifei; Wang, Yuqi

    2011-12-06

    In this study, the influence of the geometric parameters on the optical absorption of gallium arsenide [GaAs] nanowire arrays [NWAs] has been systematically analyzed using finite-difference time-domain simulations. The calculations reveal that the optical absorption is sensitive to the geometric parameters such as diameter [D], length [L], and filling ratio [D/P], and more efficient light absorption can be obtained in GaAs NWAs than in thin films with the same thickness due to the combined effects of intrinsic antireflection and efficient excitation of resonant modes. Optimized geometric parameters are obtained as follows: D = 180 nm, L = 2 μm, and D/P = 0.5. Meanwhile, the simulation on the absorption of GaAs NWAs for oblique incidence has also been carried out. The underlying physics is discussed in this work.PACS: 81.07.Gf nanowires; 81.05.Ea III-V semiconductors; 88.40.hj efficiency and performance of solar cells; 73.50.Pz photoconduction and photovoltaic effects.

  4. Burst annealing of high temperature GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  5. Ab initio study of hot electrons in GaAs.

    PubMed

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B; Louie, Steven G

    2015-04-28

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron-phonon relaxation times at the onset of the Γ, L, and X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron-phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron-phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials.

  6. Ab initio study of hot electrons in GaAs

    PubMed Central

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

    2015-01-01

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron–phonon relaxation times at the onset of the Γ, L, and X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron–phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron–phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials. PMID:25870287

  7. Transient GaAs plasmonic metasurfaces at terahertz frequencies

    DOE PAGES

    Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; ...

    2016-12-09

    Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to moremore » complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.« less

  8. GAA triplet-repeats cause nucleosome depletion in the human genome.

    PubMed

    Zhao, Hongyu; Xing, Yongqiang; Liu, Guoqing; Chen, Ping; Zhao, Xiujuan; Li, Guohong; Cai, Lu

    2015-08-01

    Although there have been many investigations into how trinucleotide repeats affect nucleosome formation and local chromatin structure, the nucleosome positioning of GAA triplet-repeats in the human genome has remained elusive. In this work, the nucleosome occupancy around GAA triplet-repeats across the human genome was computed statistically. The results showed a nucleosome-depleted region in the vicinity of GAA triplet-repeats in activated and resting CD4(+) T cells. Furthermore, the A-tract was frequently adjacent to the upstream region of GAA triplet-repeats and could enhance the depletion surrounding GAA triplet-repeats. In vitro chromatin reconstitution assays with GAA-containing plasmids also demonstrated that the inserted GAA triplet-repeats destabilized the ability of recombinant plasmids to assemble nucleosomes. Our results suggested that GAA triplet-repeats have lower affinity to histones and can change local nucleosome positioning. These findings may be helpful for understanding the mechanism of Friedreich's ataxia, which is associated with GAA triplet-repeats at the chromatin level.

  9. GaAs thin films and methods of making and using the same

    SciTech Connect

    Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

    2016-06-14

    Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

  10. Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

    1986-01-01

    A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

  11. Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

    NASA Astrophysics Data System (ADS)

    Madan, Jaya; Chaujar, Rishu

    2017-02-01

    This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

  12. Advances in large-diameter liquid encapsulated Czochralski GaAs

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1982-01-01

    The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

  13. Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

    NASA Astrophysics Data System (ADS)

    Azoulay, R.; Clei, A.; Dugrand, L.; Draïdia, auN.; Leroux, G.; Biblemont, S.

    1991-01-01

    The growth of GaAs on InP has attracted considerable interest recently because of the possibility of integration of GaAs electronic devices and 1.3 μm optical devices on the same wafer. In this work, we have investigated the growth of GaAs MESFETs and doped channel MIS-like FETs on InP by atmospheric pressure OMCVD. Because of the difference between the thermal expansion coefficient of GaAs and InP, the layers are under biaxial strain. The lowest FWHM of the (004) reflection curve of the double crystal X-ray diffraction spectra is 110 arc sec for a 12 μm thick layer. We have investigated the influence of the substrate temperature and of the arsine molar fraction on the residual carrier concentration of layers grown side by side on GaAs and on InP. The GaAs layers grown on InP are much more compensated than the layers grown on GaAs, indicating a higher incorporation of impurities. On MESFETs grown on InP, gm = 200mS/mm with Fmax higher than 30 GHz. On doped-channel MIS-like FETs on InP, we have measured gm = 145mS/mm.

  14. High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng; Yeh, Min-Yen

    2016-08-01

    Silicon oxynitride (SiON) film on a p-type (100) GaAs substrate by liquid phase deposition has been characterized. Aqueous solutions of hydrofluosilicic acid, ammonia and boric acid were used as growth precursors. The electrical characteristics of SiON film are much improved on GaAs with (NH4)2S treatment. With post-metallization annealing (PMA), hydrogen ions further passivate traps in the SiON/GaAs film and interface. Both PMA and (NH4)2S treatments on a SiON/GaAs MOS capacitor produce better interface quality and lower interface state density (Dit) compared with ones without hydrogen and sulfur passivations. The leakage current densities are improved to 7.1 × 10-8 A/cm2 and 1.8 × 10-7 A/cm2 at ±2 V. The dielectric constant of 5.6 and the effective oxide charges of -5.3 × 1010 C/cm2 are obtained. The hysteresis offset of the hysteresis loop is only 0.09 V. The lowest Dit is 2.7 × 1011 cm-2/eV at an energy of about 0.66 eV from the edge of the valence band.

  15. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    NASA Astrophysics Data System (ADS)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  16. The Automated DC Parameter Testing of GaAs MESFETs Using the Singer Automatic Integrated Circuit Test System.

    DTIC Science & Technology

    1980-09-01

    Equivalent GaAs MESFET Circuit Model 37 11 Hower’s Equivalent GaAs MESFET Circuit Model 38 12 Modified DC Equivalent Circuit Model of...I Truth Table for the GaAs MESFET Logic Gate of Figure 1 29 II Equivalent - Circuit Parameters of a GaAs MESFET with a 1 micron x 500 micron Gate 39...using Schottky diodes in the output buffer circuit . The number of diodes required is determined by the pinchoff voltage of the

  17. Copackaged AAV9 Vectors Promote Simultaneous Immune Tolerance and Phenotypic Correction of Pompe Disease

    PubMed Central

    Doerfler, Phillip A.; Todd, Adrian G.; Clément, Nathalie; Falk, Darin J.; Nayak, Sushrusha; Herzog, Roland W.; Byrne, Barry J.

    2016-01-01

    Pompe disease is a progressive neuromuscular disorder caused by lysosomal accumulation of glycogen from a deficiency in acid alpha-glucosidase (GAA). Replacement of the missing enzyme is available by repeated protein infusions; however, efficacy is limited by immune response and inability to restore enzymatic function in the central nervous system. An alternative therapeutic option is adeno-associated virus (AAV)-mediated gene therapy, which results in widespread gene transfer and prolonged transgene expression. Both enzyme replacement therapy (ERT) and gene therapy can elicit anti-GAA immune reactions that dampen their effectiveness and pose life-threatening risks to patient safety. To modulate the immune responses related to gene therapy, we show that a human codon-optimized GAA (coGAA) driven by a liver-specific promoter (LSP) using AAV9 is capable of promoting immune tolerance in a Gaa−/− mouse model. Copackaging AAV9-LSP-coGAA with the tissue-restricted desmin promoter (AAV9-DES-coGAA) demonstrates the necessary cell autonomous expression in cardiac muscle, skeletal muscle, peripheral nerve, and the spinal cord. Simultaneous high-level expression in liver led to the expansion of GAA-specific regulatory T-cells (Tregs) and induction of immune tolerance. Transfer of Tregs into naïve recipients prevented pathogenic allergic reactions after repeated ERT challenges. Copackaged AAV9 also attenuated preexisting humoral and cellular immune responses, which enhanced the biochemical correction. Our data present a therapeutic design in which simultaneous administration of two copackaged AAV constructs may provide therapeutic benefit and resolve immune reactions in the treatment of multisystem disorders. PMID:26603344

  18. Ka-band propagation characteristics of microstrip lines on GaAs substrates at cryogenic temperatures

    NASA Technical Reports Server (NTRS)

    Romanofsky, R. R.; Martinez, J. C.; Viergutz, B. J.; Bhasin, K. B.

    1990-01-01

    Effective permitivity and loss characteristics of gold microstrip lines on GaAs substrates were obtained by characterizing GaAs linear resonators at cryogenic temperatures (300 to 20 K) from 30-40 GHz. A slight decrease in effective permittivity and a significant reduction in loss were observed with lower temperatures.

  19. Measurement of charge limit in a strained lattice GaAs photocathode

    SciTech Connect

    Saez, P.; Alley, R.; Aoyagi, H.

    1993-04-01

    The SLAC Linear Collider (SLC) Polarized Electron Source (PES) photocathodes have shown a charge saturation when illuminated with a high intensity laser pulse. This charge limit in the cesium-activated GaAs crystal seems to be strongly dependent on its surface condition and on the incident light wavelength. Charge limit studies with highly polarized strained lattice GaAs materials are presented.

  20. Diffused P+-N solar cells in bulk GaAs

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1982-01-01

    Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

  1. Implementation and Performance of GaAs Digital Signal Processing ASICs

    NASA Technical Reports Server (NTRS)

    Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

    1993-01-01

    The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

  2. Effect of melt stoichiometry on twin formation in LEC GaAs. [Liquid Encapsulated Czochralski technique

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.

    1982-01-01

    It is shown that the incidence of twin formation in large diameter, undoped, (100) LEC GaAs is reduced when the melt composition is slightly As-rich. Twenty GaAs crystals were grown from stoichiometric and nonstoichiometric melts. The results suggest that the barrier to twin formation is related to the stoichiometry of the solid at the solidification front.

  3. Image processing by four-wave mixing in photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1987-01-01

    Three image processing experiments were performed by degenerate four-wave mixing in photorefractive GaAs. The experiments were imaging by phase conjugation, edge enhancement, and autocorrelation. The results show that undoped, semiinsulating, liquid-encapsulated Czochralski-grown GaAs crystals can be used as effective optical processing media despite their small electrooptic coefficient.

  4. Matrix-vector multiplication in thin photorefractive GaAs crystals

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1988-01-01

    Optical matrix-vector multiplication using four-wave mixing in a thin photorefractive GaAs crystal is demonstrated. Using a thin wafer of GaAs offers the potential to integrate the encoding spatial light modulators directly on the wave-mixing medium.

  5. Optical processing using photorefractive GaAs and InP

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Luke, Keung L.

    1991-01-01

    The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

  6. Spatial light modulation by beam coupling in GaAs crystals

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory; Chao, Tien-Hsin; Liu, Hua-Kuang; Partovi, Ashfin

    1987-01-01

    The first demonstration of spatial light modulation in GaAs using the photorefractive effect is reported. A special configuration was employed in which polarization rotation created by beam coupling was utilized. The ability to obtain these results despite a small coupling gain coefficient demonstrates the usefulness of the polarization technique presented here for optical processing with GaAs crystals.

  7. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.

    PubMed

    Dheeraj, D L; Munshi, A M; Scheffler, M; van Helvoort, A T J; Weman, H; Fimland, B O

    2013-01-11

    Control of the crystal phases of GaAs nanowires (NWs) is essential to eliminate the formation of stacking faults which deteriorate the optical and electronic properties of the NWs. In addition, the ability to control the crystal phase of NWs provides an opportunity to engineer the band gap without changing the crystal material. We show that the crystal phase of GaAs NWs grown on GaAs(111)B substrates by molecular beam epitaxy using the Au-assisted vapor-liquid-solid growth mechanism can be tuned between wurtzite (WZ) and zinc blende (ZB) by changing the V/III flux ratio. As an example we demonstrate the realization of WZ GaAs NWs with a ZB GaAs insert that has been grown without changing the substrate temperature.

  8. GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ihn, Soo-Ghang; Song, Jong-In; Kim, Young-Hun; Lee, Jeong Yong

    2006-07-01

    High-quality Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy reveal that the GaAs nanowires were epitaxially grown on Si substrates with uniform diameters along the nanowires. While GaAs nanowires on Si(111) and (001) substrates were mainly grown along the ⟨111⟩ direction with zinc-blende and wurtzite structures, unusual GaAs nanowires grown along ⟨001⟩ with a pure zinc-blende structure were also observed. Strong photoluminescence was observed from GaAs nanowires grown on a Si(001) substrate at room temperature.

  9. Perpendicular magnetic properties of CoCr films on GaAs

    NASA Astrophysics Data System (ADS)

    Manago, T.; Kuramochi, H.; Akinaga, H.

    2005-01-01

    CoCr films were deposited on three types of GaAs substrates, GaAs(001), GaAs(111), and Al oxide/GaAs(001). The perpendicular magnetic properties were investigated by magneto-optical Kerr-effect measurements. The direct deposition of the CoCr film on the GaAs substrate did not show any perpendicular magnetic properties. This fact indicates that the lattice distortion influenced by the GaAs lattice suppresses the perpendicular magnetism. The CoCr film on the Al oxide layer showed a tilted squarelike hysteresis loop. The thickness dependence of the hysteresis loop and the magnetic force microscopy showed that the onset thickness of ferromagnetism was 6.5nm. The domain size of the CoCr films monotonously decreases with the increasing thickness (6.5-75nm).

  10. Thielavins A, J and K: alpha-glucosidase inhibitors from MEXU 27095, an endophytic fungus from Hintonia latiflora

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Bioassay-guided fractionation of the bio-active organic extract obtained from solid-media culture of MEXU 27095, an endophytic fungus isolated from the Mexican medicinal plant Hintonia latiflora (Rubiaceae), led to separation of three tridepsides which were identified as thielavins A, J and K. All ...

  11. Alpha-amylase and alpha-glucosidase inhibition is differentially modulated by fucoidan obtained from Fucus vesiculosus and Ascophyllum nodosum.

    PubMed

    Kim, Kyung-Tae; Rioux, Laurie-Eve; Turgeon, Sylvie L

    2014-02-01

    Fucoidan is a water-soluble, negatively charged, biologically active polysaccharide found in great abundance in brown marine algae. However, the inhibition of α-amylase and α-glucosidase by fucoidan derived from two algal species (Ascophyllum nodosum and Fucus vesiculosus) harvested at different periods (accounting for seasonal and yearly variations) has never been investigated. It was found that fucoidans inhibited α-glucosidase differently, depending on the algal species from which it was extracted and the algae's season of harvest. Fucoidan extracted from A. nodosum was a more potent inhibitor of α-glucosidase, with an IC50 ranging from 0.013 to 0.047 mg/mL, than the inhibition by fucoidan extracted from F. vesiculosus (IC50=0.049 mg/mL). In contrast, fucoidan extracted from F. vesiculosus did not inhibit α-amylase activity, while fucoidan from A. nodosum decreased α-amylase activity by 7-100% at 5 mg/mL depending upon the algae harvest period. An IC50 of 0.12-4.64 mg/mL for fucoidan from A. nodosum was found for the α-amylase inhibition. The ability of fucoidan to inhibit α-amylase and α-glucosidase thus varies according to the algae species and harvest period. A. nodosum is more suitable than F. vesiculosus as a source of fucoidan to inhibit α-amylase and α-glucosidase activities. Their potential benefits towards Type 2 diabetes management should be further investigated.

  12. Alpha-glucosidase Inhibitory and Antioxidant Potential of Antidiabetic Herb Alternanthera sessilis: Comparative Analyses of Leaf and Callus Solvent Fractions

    PubMed Central

    Chai, Tsun-Thai; Khoo, Chee-Siong; Tee, Chong-Siang; Wong, Fai-Chu

    2016-01-01

    Background: Alternanthera sessilis is a medicinal herb which is consumed as vegetable and used as traditional remedies of various ailments in Asia and Africa. Objective: This study aimed to investigate the antiglucosidase and antioxidant activity of solvent fractions of A. sessilis leaf and callus. Materials and Methods: Leaf and callus methanol extracts were fractionated to produce hexane, chloroform, ethyl acetate, butanol, and water fractions. Antiglucosidase and 1,1-diphenyl-2-picrylhydrazyl scavenging activities as well as total phenolic (TP), total flavonoid (TF), and total coumarin (TC) contents were evaluated. Lineweaver–Burk plot analysis was performed on leaf and callus fractions with the strongest antiglucosidase activity. Results: Leaf ethyl acetate fraction (LEF) had the strongest antiglucosidase (EC50 0.55 mg/mL) and radical scavenging (EC50 10.81 μg/mL) activity among leaf fractions. Callus ethyl acetate fraction (CEF) and chloroform fraction had the highest antiglucosidase (EC50 0.25 mg/mL) and radical scavenging (EC50 34.12 μg/mL) activity, respectively, among callus fractions. LEF and CEF were identified as noncompetitive and competitive α-glucosidase inhibitors, respectively. LEF and CEF had greater antiglucosidase activity than acarbose. Leaf fractions had higher phytochemical contents than callus fractions. LEF had the highest TP, TF, and TC contents. Antiglucosidase and antioxidant activities of leaf fractions correlated with phytochemical contents. Conclusion: LEF had potent antiglucosidase activity and concurrent antioxidant activity. CEF had the highest antiglucosidase activity among all fractions. Callus culture is a promising tool for enhancing production of potent α-glucosidase inhibitors. SUMMARY Leaf ethyl acetate fraction (LEF) had the strongest antiglucosidase (EC50 0.55 mg/mL) and radical scavenging (EC50 10.81 μg/mL) activity among leaf fractionsCallus ethyl acetate fraction (CEF) and chloroform fraction had the highest antiglucosidase (EC50 0.25 mg/mL) and radical scavenging (EC50 34.12 μg/mL) activity, respectively, among callus fractionsLEF and CEF were identified as noncompetitive and competitive á-glucosidase inhibitors, respectivelyAntiglucosidase and antioxidant activities of leaf fractions correlated with phytochemical contents. Abbreviations used: LHF: Leaf hexane fraction, LCF: Leaf chloroform fraction, LEF: Leaf ethyl acetate fraction, LBF: Leaf butanol fraction, LWF: Leaf water fraction, CHF: Callus hexane fraction, CCF: Callus chloroform fraction, CEF: Callus ethyl acetate fraction, CBF: Callus butanol fraction, CWF: Callus water fraction, TP: Total phenolic, TF: Total flavonoid, TC: Total coumarin. PMID:27867265

  13. Comparative research on activation technique for GaAs photocathodes

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Qian, Yunsheng; Chang, Benkang; Chen, Xinlong; Yang, Rui

    2012-03-01

    The properties of GaAs photocathodes mainly depend on the material design and activation technique. In early researches, high-low temperature two-step activation has been proved to get more quantum efficiency than high-temperature single-step activation. But the variations of surface barriers for two activation techniques have not been well studied, thus the best activation temperature, best Cs-O ratio and best activation time for two-step activation technique have not been well found. Because the surface photovoltage spectroscopy (SPS) before activation is only in connection with the body parameters for GaAs photocathode such as electron diffusion length and the spectral response current (SRC) after activation is in connection with not only body parameters but also surface barriers, thus the surface escape probability (SEP) can be well fitted through the comparative research between SPS before activation and SEP after activation. Through deduction for the tunneling process of surface barriers by Schrödinger equation, the width and height for surface barrier I and II can be well fitted through the curves of SEP. The fitting results were well proved and analyzed by quantitative analysis of angle-dependent X-ray photoelectron spectroscopy (ADXPS) which can also study the surface chemical compositions, atomic concentration percentage and layer thickness for GaAs photocathodes. This comparative research method for fitting parameters of surface barriers through SPS before activation and SRC after activation shows a better real-time in system method for the researches of activation techniques.

  14. Heterostructure design optimization for laser cooling of GaAs

    NASA Astrophysics Data System (ADS)

    Imangholi, B.; Wang, C.; Soto, E.; Sheik-Bahae, M.; Stintz, A.; Malloy, K.; Nuntawong, N.; Epstein, R.

    2007-02-01

    Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

  15. Back contacted and small form factor GAAS solar cell.

    SciTech Connect

    Clews, Peggy Jane; Wanlass, Mark W.; Sanchez, Carlos A.; Pluym, Tammy; Cruz-Campa, Jose Luis; Okandan, Murat; Gupta, Vipin P.; Nielson, Gregory N.; Resnick, Paul James

    2010-06-01

    We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 {micro}m thick devices with lateral dimensions of 250 {micro}m, 500 {micro}m, 1 mm, and 2 mm. The fabrication procedure and the results of characterization tests are discussed. The highest efficiency cell had a lateral size of 500 {micro}m and a conversion efficiency of 10%, open circuit voltage of 0.9 V and a current density of 14.9 mA/cm{sup 2} under one-sun illumination.

  16. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C.

    1980-01-01

    With the objective of demonstrating the feasibility of fabricating 2 x 2 cm efficient, shallow homojunction GaAs solar cells for space applications, this program addresses the basic problems of material preparation and device fabrication. Significant progress was made and conversion efficiencies close to 16 percent at AM0 were obtained on 2 x 2 cm cells. Measurements and computer analyses on the n(+)/p/p(+) shallow homojunction cells indicate that such cell configuration should be very resistant to 1 MeV electron irradiation.

  17. Back-contacted emitter GaAs solar cells

    SciTech Connect

    Araujo, G.L.; Marti, A.; Algora, C. )

    1990-06-25

    A new device structure to improve the performance of concentrator GaAs solar cells is described and the first experimental results are reported. The reason for such an improvement relies on a drastic reduction of the shadowing and series resistance losses based on the possibility of back contacting the emitter region of the solar cell. The experimental results obtained with devices of these types, with a simplified structure, fabricated by liquid phase epitaxy, demonstrate the feasibility and correct operation of the proposed back contact of the emitter of the cells.

  18. Limiting efficiencies of GaAs solar cells

    SciTech Connect

    Aravjo, G.L.; Marti, A. )

    1990-05-01

    The limiting efficiencies of GaAs solar cells when used under concentrated sunlight are calculated. An assessment of the benefits to be expected from applying techniques which restrict the angle of acceptance of the cell is made. It is concluded that by restricting the acceptance angle the emission of the luminescent photons and therefore the associated current loss are reduced. As a consequence of this effect, a limiting efficiency close to 39% results for concentration ratios of about 1000 suns AM1.5 Direct. For lower concentration ratios, the limiting efficiency decreases if Auger recombination is also taken into account.

  19. Inherent photoluminescence Stokes shift in GaAs.

    PubMed

    Ullrich, Bruno; Singh, Akhilesh K; Barik, Puspendu; Xi, Haowen; Bhowmick, Mithun

    2015-06-01

    The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 μm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter.

  20. Coupling reactions of trifluoroethyl iodide on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Singh, N. K.; Kemp, N. T.; Paris, N.; Balan, V.

    2004-07-01

    We report on the reactions of 2-iodo-1,1,1-trifluoroethane (CF3CH2I) on gallium-rich GaAs(100)-(4×1), studied using the techniques of temperature programmed desorption and x-ray photoelectron spectroscopy. The study is to provide evidence for the formation of a higher fluorinated alkene, 1,1,4,4,4-pentafluoro-1-butene (CF2=CHCH2CF3) and alkane, 1,1,1,4,4,4-hexafluorobutane (CF3CH2CH2CF3) from the coupling reactions of covalently bonded surface alkyl (CF3CH2•) moieties. CF3CH2I adsorbs nondissociatively at 150 K. Thermal dissociation of this weakly chemisorbed state occurs below room temperature to form adsorbed CF3CH2• and I• species. The surface CF3CH2• species undergoes β-fluoride elimination to form gaseous CF2=CH2 and this represents the major pathway for the removal of CF3CH2• species from the surface. In competition with the β-fluoride elimination process the adsorbed CF3CH2• species also undergoes, recombination with surface iodine atoms to form recombinative molecular CF3CH2I, olefin insertion reaction with CF2=CH2 to form gaseous CF2=CHCH2CF3, and last self-coupling reaction to form CF3CH2CH2CF3. The adsorbed surface iodine atoms, formed by the dissociation of the molecularly chemisorbed CF3CH2I, and fluorine atoms formed during the β-fluoride elimination reaction, both form etch products (GaI, GaF, AsI, AsF, and As2) by their reactions with the surface layer Ga atoms, subsurface As atoms, and GaAs substrate. In this article we discuss the mechanisms by which these products form from the adsorbed CF3CH2• and I• species, and the role that the GaAs surface plays in the proposed reaction pathways. We compare the reactivity of the GaAs surface with transition metals in its ability to facilitate dehydrogenation and coupling reactions in adsorbed alkyl species. .

  1. Investigation of Optically Induced Avalanching in GaAs

    DTIC Science & Technology

    1989-06-01

    by Bovino , et al 4 to increase the hold off voltage. The button switch design of Fig. 4c has been used by several researchers5 ’ 7 to obtain the...ul Long flashover palh Figure 3b. 434 Optical Jlatlern a. Mourou Switch b. Bovino Switch c. Button Switch Figure 4. Photoconductive Switches...Technology and Devices Laboratory, ERADCOM (by L. Bovino , et. all) 4 • The deposition recipe for the contacts is 1) 50 ANi (provides contact to GaAs

  2. GaAs vapor-grown bipolar transistors.

    NASA Technical Reports Server (NTRS)

    Nuese, C. J.; Gannon, J. J.; Dean, R. H.; Gossenberger, H. F.; Enstrom, R. E.

    1972-01-01

    Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.

  3. CO2 laser waveguiding in proton implanted GaAs

    NASA Technical Reports Server (NTRS)

    Jenkinson, H. A.; Larson, D. C.

    1981-01-01

    Surface layers capable of supporting optical modes at 10.6 microns have been produced in n-type GaAs wafers through 300 keV proton implantation. The dominant mechanism for this effect appears to be free carrier compensation. Characterization of the implanted layers by analysis of infrared reflectivity spectra and synchronous coupling at 10.6 microns produced results in good agreement with elementary models. These results of sample characterization by infrared reflectivity and by CO2 laser waveguiding as implanted are presented and evaluated.

  4. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  5. Rugged, Thin GaAs Solar Cell Development. Phase I.

    DTIC Science & Technology

    1986-06-16

    PAGE Figure I n-GaAs/n-Ge Profile 10 Fi’,ure 2 AIGaAs/GaAs/Ge Solar Cell - I - V Curve 12 Figure 3(a) AIGaAs/GaAs/Ge Solar Cell - I - V Curve 14 Figure 3...b) Donor Profile for GaAs on Ge 15 Figure 4 AIGaAs/GaAs/Ge Solar Cell - I - V Curve 17 Figure 5 AIGaAs/GaAs/Ge Solar Cell - I - V Curve 18 Figure 6 I-V

  6. High-Speed GaAs MESFET Memory Study.

    DTIC Science & Technology

    1981-07-01

    ne .. ’ a-d Id,devt h ,, 1 nu-.4511) Semiconductor Memory Enhancement-Mode MESFET Random Access Memory (RAM) GaAs Integrated Circuits (ICs) 4aAs...differential is reached. Figure 2-5 is a differential amplifier with a gain of %20 ( determined bv the gm.R 0 product of the FETs). This circuit has been...Write Mode Figure 2-9 shows the circuit that was Simulated to determine the transient write-mode reset response. The capacitors CB and CBB (0.2 pF each

  7. Real-time optical correlator using photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Liu, Duncan T. H.; Cheng, Li-Jen; Chao, Tien-Hsin; Yu, Jeffrey W.; Gregory, Don A.

    1990-01-01

    A real-time optical correlator based on GaAs and liquid-crystal TV (LCTV) is demonstrated. The demonstrated system has a video-frame rate limited by the speed of the LCTVs; if faster spatial-light modulators are used, the potential frame rate of a GaAs-based correlator can be as fast as 1000 frames/sec under experimental conditions. Comparisons are made between VanderLugt and joint transform and between degenerate and nondegenerate four-wave mixing. The edge-enhancement effect and the Bragg diffraction effect are discussed.

  8. Properties and applications of photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Liu, Duncan T. H.

    1990-01-01

    Photorefractive semiconductors have the attractive features of fast response times and operation at near-infrared wavelengths. This has opened some new research opportunities in the field of photorefractive nonlinear optics which is significant for applications in real-time image processing and optical computing. This paper presents recent experimental demonstrations of several basic optical information processing techniques using photorefractive GaAs crystals. The results of these demonstrations illustrate that photorefractive compound semiconductors has a great potential as a new medium for light beam interaction based on the dynamic holographic principle.

  9. Clinical Analysis of Algerian Patients with Pompe Disease

    PubMed Central

    Medjroubi, M.; Froissart, R.; Taghane, N.; Sifi, K.; Benhabiles, A.; Lemai, S.; Semra, S.; Benmekhebi, H.; Bouderda, Z.; Abadi, N.; Hamri, A.

    2017-01-01

    Pompe's disease is a metabolic myopathy caused by a deficiency of acid alpha-glucosidase (GAA), also called acid maltase, an enzyme that degrades lysosomal glycogen. The clinical presentation of Pompe's disease is variable with respect to the age of onset and rate of disease progression. Patients with onset of symptoms in early infancy (infantile-onset Pompe disease (IOPD)) typically exhibit rapidly progressive hypertrophic cardiomyopathy and marked muscle weakness. Most of them die within the first year of life from cardiac and/or respiratory failure. In the majority of cases of Pompe's disease, onset of symptoms occurs after infancy, ranging widely from the first to sixth decade of life (late-onset Pompe's disease or LOPD). Progression of the disease is relentless and patients eventually progress to loss of ambulation and death due to respiratory failure. The objective of this study was to characterize the clinical presentation of 6 patients (3 with EOPD and the other 3 with LOPD) of 5 families from the East of Algeria. All our patients were diagnosed as having Pompe's disease based on biochemical confirmations of GAA deficiency by dried blood spots (DBS) and GAA gene mutations were analyzed in all patients who consented (n = 4). Our results are similar to other ethnic groups. PMID:28265479

  10. Influence of Friedreich Ataxia GAA Noncoding Repeat Expansions on Pre-mRNA Processing

    PubMed Central

    Baralle, Marco; Pastor, Tibor; Bussani, Erica; Pagani, Franco

    2008-01-01

    The intronic GAA repeat expansion in the frataxin (FXN) gene causes the hereditary neurodegenerative disorder Friedreich ataxia. Although it is generally believed that GAA repeats block transcription elongation, direct proof in eukaryotic systems is lacking. We tested in hybrid minigenes the effect of GAA and TTC repeats on nascent transcription and pre-mRNA processing. Unexpectedly, disease-causing GAA100 repeats did not affect transcriptional elongation in a nuclear HeLa Run On assay, nor did they affect pre-mRNA transcript abundance. However, they did result in a complex defect in pre-mRNA processing. The insertion of GAA but not TTC repeats downstream of reporter exons resulted in their partial or complete exclusion from the mature mRNAs and in the generation of a variety of aberrant splicing products. This effect of GAA repeats was observed to be position and context dependent; their insertion at different distances from the reporter exons had a variable effect on splice-site selection. In addition, GAA repeats bind to a multitude of different splicing factors and induced the accumulation of an upstream pre-mRNA splicing intermediate, which is not turned over into mature mRNA. When embedded in the homologous frataxin minigene system, the GAA repeats did not affect the pre-mRNA transcript abundance but did significantly reduce the splicing efficiency of the first intron. These data indicate an association between GAA noncoding repeats and aberrant pre-mRNA processing because binding of transcribed GAA repeats to a multitude of trans-acting splicing factors can interfere with normal turnover of intronic RNA and thus lead to its degradation and a lower abundance of mature mRNA. PMID:18597733

  11. Image processing using Gallium Arsenide (GaAs) technology

    NASA Technical Reports Server (NTRS)

    Miller, Warner H.

    1989-01-01

    The need to increase the information return from space-borne imaging systems has increased in the past decade. The use of multi-spectral data has resulted in the need for finer spatial resolution and greater spectral coverage. Onboard signal processing will be necessary in order to utilize the available Tracking and Data Relay Satellite System (TDRSS) communication channel at high efficiency. A generally recognized approach to the increased efficiency of channel usage is through data compression techniques. The compression technique implemented is a differential pulse code modulation (DPCM) scheme with a non-uniform quantizer. The need to advance the state-of-the-art of onboard processing was recognized and a GaAs integrated circuit technology was chosen. An Adaptive Programmable Processor (APP) chip set was developed which is based on an 8-bit slice general processor. The reason for choosing the compression technique for the Multi-spectral Linear Array (MLA) instrument is described. Also a description is given of the GaAs integrated circuit chip set which will demonstrate that data compression can be performed onboard in real time at data rate in the order of 500 Mb/s.

  12. High-efficiency nanostructured window GaAs solar cells.

    PubMed

    Liang, Dong; Kang, Yangsen; Huo, Yijie; Chen, Yusi; Cui, Yi; Harris, James S

    2013-10-09

    Nanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered open circuit voltage and fill factor. One of the main challenges is formation of good junction and electrical contact. In particular, nanostructures in GaAs only have shown unsatisfactory performances (below 5% in energy conversion efficiency) which cannot match their ideal material properties and the record photovoltaic performances in industry. Here we demonstrate a completely new design for nanostructured solar cells that combines nanostructured window layer, metal mesa bar contact with small area, high quality planar junction. In this way, we not only keep the advanced optical properties of nanostructures such as broadband and wide angle antireflection, but also minimize its negative impact on electrical properties. High light absorption, efficient carrier collection, leakage elimination, and good lateral conductance can be simultaneously obtained. A nanostructured window cell using GaAs junction and AlGaAs nanocone window demonstrates 17% energy conversion efficiency and 0.982 V high open circuit voltage.

  13. Sn nanothreads in GaAs: experiment and simulation

    NASA Astrophysics Data System (ADS)

    Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

    2016-12-01

    The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

  14. Subnanosecond, high voltage photoconductive switching in GaAs

    SciTech Connect

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. ); O'Bannon, B.J. )

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  15. Thermal stress cycling of GaAs solar cells

    NASA Astrophysics Data System (ADS)

    Janousek, B. K.; Francis, R. W.; Wendt, J. P.

    A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

  16. Bismuth alloying properties in GaAs nanowires

    SciTech Connect

    Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  17. 28 percent efficient GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

    1988-01-01

    AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

  18. Evaluation of clonal herbs of Lamiaceae species for management of diabetes and hypertension.

    PubMed

    Kwon, Young-In I; Vattem, Dhiraj A; Shetty, Kalidas

    2006-01-01

    In the current study, we screened 7 clonal lines from single seed phenotypes of Lamiaceae family for the inhibition of alpha-amylase, alpha-glucosidase and angiotensin converting enzyme (ACE) inhibitory activity. Water extracts of oregano had the highest alpha-glucosidase inhibition activity (93.7%), followed by chocolate mint (85.9%) and lemon balm (83.9%). Sage (78.4 %), and three different clonal lines of rosemary: rosemary LA (71.4%), rosemary 6 (68.4%) and rosemary K-2 (67.8%) also showed significant alpha-glucosidase inhibitory activity. The alpha-glucosidase inhibitory activity of the extracts was compared to selected specific phenolics detected in the extracts using HPLC. Catechin had the highest alpha-glucosidase inhibitiory activity (99.6 %) followed by caffeic acid (91.3 %), rosmarinic acid (85.1%) and resveratrol (71.1 %). Catechol (64.4%), protocatechuic acid (55.7%) and quercetin (36.9%) also exhibited significant alpha-glucosidase inhibitory activity. Results suggested that alpha-glucosidase inhibitory activity of the clonal extracts correlated to the phenolic content, antioxidant activity and phenolic profile of the extracts. The clonal extracts of the herbs and standard phenolics tested in this study did not have any effect on the alpha-amylase activity. We also investigated the ability of the clonal extracts to inhibit rabbit lung angiotensin I-converting enzyme (ACE). The water extracts of rosemary, rosemary LA had the highest ACE inhibitory activity (90.5%), followed by lemon balm (81.9%) and oregano (37.4 %). Lower levels of ACE inhibition were observed with ethanol extracts of oregano (18.5 %) and lemon balm (0.5 %). Among the standard phenolics only resveratrol (24.1 %), hydroxybenzoic acid (19.3 %) and coumaric acid (2.3 %) had ACE inhibitory activity.

  19. GaAs nanowire/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hybrid solar cells.

    PubMed

    Chao, Jiun-Jie; Shiu, Shu-Chia; Hung, Shih-Che; Lin, Ching-Fuh

    2010-07-16

    In this paper, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO(2) nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of the GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays offers great improvements in efficiency relative to a conventional planar cell. Compared to the planar GaAs/PEDOT:PSS cells, the power conversion efficiency under AM 1.5 global one sun illumination is improved from 0.29% to 5.8%.

  20. Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals.

    PubMed

    Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M; Kamysbayev, Vladislav; Filatov, Alexander S; Sun, Cheng-Jun; Lee, Byeongdu; Rajh, Tijana; Schaller, Richard D; Talapin, Dmitri V

    2017-03-08

    GaAs is one of the most important semiconductors. However, colloidal GaAs nanocrystals remain largely unexplored because of the difficulties with their synthesis. Traditional synthetic routes either fail to produce pure GaAs phase or result in materials whose optical properties are very different from the behavior expected for quantum dots of direct-gap semiconductors. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS, transient absorption, and EPR spectroscopies, we conclude that unusual optical properties of colloidal GaAs NCs can be related to the presence of Ga vacancies and lattice disorder. These defects do not manifest themselves in TEM images and powder X-ray diffraction patterns but are responsible for the lack of absorption features even in apparently crystalline GaAs nanoparticles. We introduce a novel molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.

  1. Development and characterization of zone melt growth GaAs for gamma-ray detectors

    SciTech Connect

    King, S.E.; Dietrich, H.B.; Henry, R.L.; Katzer, D.S.; Moore, W.J.; Phillips, G.W.; Mania, R.C.

    1996-06-01

    GaAs is a potentially attractive material for room temperature x-ray and {gamma}-ray spectrometers. To date, the only high resolution GaAs devices were produced by epitaxial growth. The usefulness of detectors made from bulk grown semi-insulating (SI) GaAs has been limited by low charge collection efficiency caused, it is believed, by the high density of EL2 deep donor defects. Vertical zone melt (VZM) growth of GaAs has recently been developed at the Naval Research Laboratory. Zone refining and zone leveling techniques were used with VZM to reduce the level of impurities and the EL2 defects in bulk SI-GaAs. Schottky barrier and PIN diodes have been fabricated from the newly grown material. These devices were characterized using {alpha} particles and {gamma}-rays. In this paper, the measurements and analysis of the first VZM GaAs devices are presented and compared with commercially available GaAs. The intent is to test the hypothesis that high purity, low defect GaAs material growth could lead to improved radiation detectors.

  2. Peripheral nerve and neuromuscular junction pathology in Pompe disease

    PubMed Central

    Falk, Darin J.; Todd, Adrian Gary; Lee, Sooyeon; Soustek, Meghan S.; ElMallah, Mai K.; Fuller, David D.; Notterpek, Lucia; Byrne, Barry J.

    2015-01-01

    Pompe disease is a systemic metabolic disorder characterized by lack of acid-alpha glucosidase (GAA) resulting in ubiquitous lysosomal glycogen accumulation. Respiratory and ambulatory dysfunction are prominent features in patients with Pompe yet the mechanism defining the development of muscle weakness is currently unclear. Transgenic animal models of Pompe disease mirroring the patient phenotype have been invaluable in mechanistic and therapeutic study. Here, we demonstrate significant pathological alterations at neuromuscular junctions (NMJs) of the diaphragm and tibialis anterior muscle as prominent features of disease pathology in Gaa knockout mice. Postsynaptic defects including increased motor endplate area and fragmentation were readily observed in Gaa−/− but not wild-type mice. Presynaptic neuropathic changes were also evident, as demonstrated by significant reduction in the levels of neurofilament proteins, and alterations in axonal fiber diameter and myelin thickness within the sciatic and phrenic nerves. Our data suggest the loss of NMJ integrity is a primary contributor to the decline in respiratory and ambulatory function in Pompe and arises from both pre- and postsynaptic pathology. These observations highlight the importance of systemic phenotype correction, specifically restoration of GAA to skeletal muscle and the nervous system for treatment of Pompe disease. PMID:25217571

  3. Below-band-gap absorption in undoped GaAs at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Wasiak, Michał; Walczak, Jarosław; Motyka, Marcin; Janiak, Filip; Trajnerowicz, Artur; Jasik, Agata

    2017-02-01

    This paper presents results of measurements of optical absorption in undoped epitaxial GaAs for photon energies below the band gap. Absorption spectra were determined from transmission spectra of a thin GaAs layer at several temperatures between 25 °C and 205 °C. We optimized our experiment to investigate the long-wavelength part of the spectrum, where the absorption is relatively low, but significant from the point of view of applications of GaAs in semiconductor lasers. Absorption of 100 cm-1 was observed over 30 nm below the band gap at high temperatures.

  4. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  5. LPE growth and optical characteristics of GaAs1-xSbx epilayer

    NASA Astrophysics Data System (ADS)

    Wang, Yang; Hu, Shuhong; Zhou, Wei; Sun, Yan; Zhang, Bin; Wang, Chao; Dai, Ning

    2017-04-01

    A series of GaAs1-xSbx epilayers have been successfully grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) technique at about 550 °C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1-xSbx epilayers were performed by photoluminescence (PL) and transmission spectra.

  6. Preflight study of San Marco D/L GaAs solar cell panels

    NASA Technical Reports Server (NTRS)

    Day, J. H., Jr.

    1984-01-01

    The solar array for the San Marco D/L spacecraft is described and the performance of 4 GaAs solar cell panels are examined. In comparison to the typical Si solar cell panel for San Marco D/L, it is shown that each GaAs solar cell panel provides at least 23 percent more specific power at maximum output and 28 deg C. Also described here, are several measurements that will be made to evaluate the relative performance of Si and GaAs solar cell panels during the San Marco D/L flight.

  7. Summary of GaAs Solar Cell Performance and Radiation Damage Workshop

    NASA Technical Reports Server (NTRS)

    Kamath, G. S.

    1979-01-01

    The workshop considered the GaAs solar cell capability and promise in several steps: (1) maximum efficiency; (2) space application; (3) major technology problems (AR coating optimization, contacts); (4) radiation resistance; (5) cost and availability; and (6) alternatives. The workshop believes that GaAs solar cells are fast approaching the fulfillment of their potential as candidates for space cells. A maximum efficiency of 20 to 31 percent AMO can be reasonably expected from GaAs based cells, and this may go a little higher with concentration. The use of concentration in space needs to be more carefully evaluated.

  8. X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs

    NASA Astrophysics Data System (ADS)

    Massies, J.; Contour, J. P.

    1985-06-01

    X-ray photoelectron spectroscopy has been used to investigate the effects of de-ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga-rich oxide layer is formed on GaAs at the rate of 10-20 Å h-1. In contrast, when the GaAs surface is treated in dynamic conditions (running water), no oxide buildup is observed. Moreover, running water can remove the oxide film formed in static conditions, as well as oxidized layers due to air exposure. These results are discussed in the framework of cleaning prior to molecular beam epitaxy.

  9. Role of electrode metallization in performance of semi-insulating GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Dubecký, František; Boháček, Pavol; Sekáčová, Mária; Zaťko, Bohumír; Lalinský, Tibor; Linhart, Vladimír; Šagátová-Perd'ochová, Andrea; Mudroň, Ján; Pospíšil, Stanislav

    2007-06-01

    In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from "detector-grade" bulk SI GaAs are characterized by current-voltage measurements and their detection performance is evaluated from pulse-height spectra of 241Am and 57Co γ-sources. Observed results are evaluated and discussed. Importance of the optimized electrodes technology of SI GaAs detector with good performance is demonstrated.

  10. New photocathode using ZnSe substrates with GaAs active layer

    NASA Astrophysics Data System (ADS)

    Jin, Xiuguang; Takeda, Yoshikazu; Fuchi, Shingo

    2017-03-01

    GaAs active layers were successfully fabricated on ZnSe substrates using a metalorganic vapor phase epitaxy system. As a photocathode, a GaAs active layer shows a high quantum efficiency (QE) of 9% at 532 nm laser light illumination, which is comparable to a QE of 11% from GaAs bulk. In addition, a photoemission current of 10 µA was obtained from this photocathode. One more important point is that this photocathode could realize back-side illumination of 532 nm laser light, and thus its widespread applications are expected in microscopy and accelerator fields.

  11. Dietary guanidino acetic acid is an efficacious replacement for arginine for young chicks.

    PubMed

    Dilger, R N; Bryant-Angeloni, K; Payne, R L; Lemme, A; Parsons, C M

    2013-01-01

    Guanidino acetic acid (GAA) is synthesized in the liver and kidney from Arg and Gly and subsequently methylated by S-adenosylmethionine to form creatine. Four bioassays were carried out to determine the capacity of GAA to serve as a dietary replacement for Arg for growing chicks. Broiler chicks were fed Arg-deficient dextrose-casein (0.88% Arg) or corn-corn coproduct-soybean meal (1.0% Arg) basal diets during 9-d battery feeding trials involving 5 pens of 4 chicks per treatment. The dextrose-casein diet was shown to be markedly deficient in Arg as both weight gain and G:F increased (P < 0.01) due to addition of Arg, GAA, or creatine. The optimal level of added GAA was 0.12% of the diet, but this level of GAA or 1.0% creatine-H(2)O did not improve growth performance when added to an Arg-adequate diet. A second assay confirmed this level of optimal Arg in a 2 × 2 factorial arrangement of l-Arg and GAA supplementation. Using a practical-type diet based on corn, corn gluten meal, distillers dried grains with solubles, and soybean meal, similar improvements (P < 0.05) in G:F resulted from addition of 0.25% Arg, 0.12% GAA, or 0.15% creatine·H(2)O. These results demonstrate that 0.12% supplemental GAA, like creatine, produces consistent growth responses in young chicks fed Arg-deficient diets. To provide further evidence of the capacity for GAA to serve as a dietary Arg replacement, the dextrose-casein diet was supplemented with 7 graded doses of Arg in the absence or presence of 0.12% GAA (14 total diets). Quadratic (P < 0.01) responses in weight gain and G:F responses to supplemental Arg were observed. Similar supplemental Arg requirements were estimated in the absence and presence of 0.12% GAA, but GAA elicited a greater improvement (P < 0.05) in G:F when added to Arg-deficient, compared with Arg-adequate, diets. Collectively, these data indicate that GAA can be used as an efficacious replacement for dietary Arg for young chicks.

  12. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates

    NASA Astrophysics Data System (ADS)

    Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.; Imamov, R. M.; Pushkarev, S. S.; Trunkin, I. N.; Maltsev, P. P.

    2017-01-01

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111) A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in "low-temperature" GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100-150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111) A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150-200 nm.

  13. Characterization of pre- and post-treatment pathology after enzyme replacement therapy for Pompe disease.

    PubMed

    Thurberg, Beth L; Lynch Maloney, Colleen; Vaccaro, Charles; Afonso, Kendra; Tsai, Anne Chun-Hui; Bossen, Edward; Kishnani, Priya S; O'Callaghan, Michael

    2006-12-01

    In Pompe disease, a genetic deficiency of lysosomal acid alpha-glucosidase, glycogen accumulates abnormally in the lysosomes of skeletal, cardiac and smooth muscle, and contributes to clinically progressive and debilitating muscle weakness. The present study involved 8 infantile-onset Pompe patients, treated weekly with 10 mg/kg of recombinant human acid alpha-glucosidase (rhGAA). Muscle biopsies were obtained at baseline, 12 and 52 weeks post-treatment to establish an indicator of efficacy. Several histologic strategies were employed to characterize changes in pre- and post-treatment samples, including high-resolution light microscopy and digital histomorphometry, electron microscopy, capillary density and fiber type analysis, and confocal microscopy for satellite cell activation analysis. Histomorphometric analysis was performed on muscle samples to assess glycogen depletion in response to enzyme replacement therapy (ERT). The extent of glycogen clearance varied widely among these patient samples, and correlated well with clinical outcome. Low glycogen levels, mild ultrastructural damage, a high proportion of type I fibers, and young age at baseline were all features associated with good histologic response. There was no correlation between capillary density and glycogen clearance, and activated satellite cell levels were shown to be higher in post-treatment biopsies with poor histologic responses. This histopathologic study of infantile Pompe disease provides detailed insight into the cellular progression of the disease and its response to therapy while highlighting a number of methodologies which may be employed to assess regression or progression of the associated pathology. As enzyme replacement therapy becomes more prevalent for the treatment of lysosomal storage diseases, such evaluation of post-treatment pathology will likely become a more common occurrence in the daily practice of pathologists.

  14. Guanidinoacetic acid versus creatine for improved brain and muscle creatine levels: a superiority pilot trial in healthy men.

    PubMed

    Ostojic, Sergej M; Ostojic, Jelena; Drid, Patrik; Vranes, Milan

    2016-09-01

    In this randomized, double-blind, crossover trial, we evaluated whether 4-week supplementation with guanidinoacetic acid (GAA) is superior to creatine in facilitating creatine levels in healthy men (n = 5). GAA (3.0 g/day) resulted in a more powerful rise (up to 16.2%) in tissue creatine levels in vastus medialis muscle, middle-cerebellar peduncle, and paracentral grey matter, as compared with creatine (P < 0.05). These results indicate that GAA as a preferred alternative to creatine for improved bioenergetics in energy-demanding tissues.

  15. Patterned radial GaAs nanopillar solar cells.

    PubMed

    Mariani, Giacomo; Wong, Ping-Show; Katzenmeyer, Aaron M; Léonard, Francois; Shapiro, Joshua; Huffaker, Diana L

    2011-06-08

    Photovoltaic devices using GaAs nanopillar radial p-n junctions are demonstrated by means of catalyst-free selective-area metal-organic chemical vapor deposition. Dense, large-area, lithographically defined vertical arrays of nanowires with uniform spacing and dimensions allow for power conversion efficiencies for this material system of 2.54% (AM 1.5 G) and high rectification ratio of 213 (at ±1 V). The absence of metal catalyst contamination results in leakage currents of ∼236 nA at -1 V. High-resolution scanning photocurrent microscopy measurements reveal the independent functioning of each nanowire in the array with an individual peak photocurrent of ∼1 nA at 544 nm. External quantum efficiency shows that the photocarrier extraction highly depends on the degenerately doped transparent contact oxide. Two different top electrode schemes are adopted and characterized in terms of Hall, sheet resistance, and optical transmittance measurements.

  16. Thermal annealing of GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Curtis, H. B.; Brinker, David J.

    1991-01-01

    Isochronal and isothermal annealing tests were performed on GaAs concentrator cells which were irradiated with electrons of various energies to fluences up to 1 x 10(exp 16) e/sq cm. The results include: (1) For cells irradiated with electrons from 0.7 to 2.3 MeV, recovery decreases with increasing electron energy. (2) As determined by the un-annealed fractions, isothermal and isochronal annealing produce the same recovery. Also, cells irradiated to 3 x 10(exp 15) or 1 x 10(exp 16) e/sq cm recover to similar un-annealed fractions. (3) Some significant annealing is being seen at 150 C although very long times are required.

  17. A Ka-band GaAs monolithic phase shifter

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Geddes, J. J.; Contolatis, A.; Bauhahn, P. E.; Chao, C.

    1983-01-01

    The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

  18. The future impact of GaAs digital IC's

    NASA Astrophysics Data System (ADS)

    Greiling, P. T.

    1985-03-01

    A review of digital GaAs IC technology and an assessment of its future impact on gigabit signal processing is presented. High-speed signal processing and computers will require MSI-complexity interface circuits capable of 1-10 GHz clock frequencies and LSI-complexity digital circuits operating in the 0.2-5 GHz range at tens of microwatts per gate. A wide range of applications exists for frequency counters, multiplexers, A/D converters, FFT's, microprocessors, and memories that operate at speeds significantly higher than on presently available circuits. Issues related to high-speed IC design such as power dissipation, packing density, capacitance effects, design rules, and intra- and interchip propagation delays are discussed.

  19. DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell

    NASA Astrophysics Data System (ADS)

    Kósa, Arád; Stuchlíková, L'ubica; Dawidowski, Wojciech; Jakuš, Juraj; Sciana, Beata; Radziewicz, Damian; Pucicki, Damian; Harmatha, Ladislav; Kováč, Jaroslav; Tłaczala, Marek

    2014-09-01

    In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels

  20. Radiative properties of multicarrier bound excitons in GaAs

    NASA Astrophysics Data System (ADS)

    Karin, Todd; Barbour, Russell J.; Santori, Charles; Yamamoto, Yoshihisa; Hirayama, Yoshiro; Fu, Kai-Mei C.

    2015-04-01

    Excitons in semiconductors can have multiple lifetimes due to spin-dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of k =0 excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be To×(1 ,3 ,3/4 ) , where To=(0.61 ±0.12 ) ns . Furthermore, we provide an estimate of the intralevel and interlevel exciton spin-relaxation rates.

  1. High gain GaAs photoconductive semiconductor switches: Switch longevity

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1998-07-01

    Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

  2. Fabricating high-concentration GaAs cell photovoltaic modules

    SciTech Connect

    Kaminar, N.R.; Hamaker, H.C.

    1986-04-01

    This program comprises the design and manufacture of components of a GaAs-cell, passively-cooled concentrator. A Fresnel lens, 5.44-inches square, was used in conjunction with a solid glass, domed-top secondary optical element to concentrate the light on single-junction GaAs cells. The cell had an active area 0.2 inches in diameter and was soldered directly to the copper heatspreader. The heatspreader was bonded with heat-conductive RTV to an aluminum dissipator, which formed the module housing. The module was designed to be attached to a tracker at the center. Obtained were 26% cell efficiency in flash tests and 19.2% combined lens/cell efficiency outdoors. Optical transmission was lower than expected due to higher than expected losses in the secondary. The secondaries were made using a molding technique applicable to mass production.

  3. Antisite-related defects in plastically deformed GaAs

    SciTech Connect

    Omling, P.; Weber, E.R.; Samuelson, L.

    1986-04-15

    Optical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured As/sub Ga/ containing defects produced during deformation. Since the As/sub Ga/-related defects produced by plastic deformation anneal at Tapprox.650 /sup 0/C, the implication for any correlation between EL2 and As/sub Ga/ antisites is that only those As/sub Ga/-related EPR centers which are stable up to at least 950 /sup 0/C can possibly be responsible for the EL2 level.

  4. Impurity and Defect Interactions in GaAs.

    DTIC Science & Technology

    1982-09-30

    CONTRACT OR GRANT NUMSER() C.M. Wolfe, P.A. Fedders, G.E. Stillma4 N00014-80C-0762 * Camellia M.L. Yee, R.T. Green, T.S. Low, B.J. Skromme S. PERFORMING...communication. 21. K.H. Nichols, Camellia M.L. Yee and C.M. Wolfe, Solid State Electron. 23, 109 (1980). 22. H. Rohdin, N.W. Muller and C.’. Wolfe, J...York, 1973, p. 351. 9. K.H. Nichols, Camellia M.L. Yee and C.M. Wolfe, "High-Temperature Carrier Transport in n-Type Epitaxial GaAs", Solid-State

  5. Index grating lifetime in photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Partovi, Afshin

    1988-01-01

    The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

  6. The effect of parental gender on the GAA dynamic mutation in the FRDA gene

    SciTech Connect

    Pianese, L.; Cavalcanti, F.; Calabrese, O. |

    1997-02-01

    Within a cooperative study, we recently isolated the defective gene (X25) causing Friedreich ataxia (FRDA), an autosomal recessive neurodegenerative disorder. X25 encodes a 210-amino acid protein, frataxin, whose function is unknown. Frataxin mRNA levels are reduced in FRDA patients. The most frequent mutation is the expansion of a (GAA){sub n} trinucleotide repeat in the first X25 intron. Normal chromosomes contain 8-22 copies of the triplet, whereas FRDA chromosomes contain >200 copies. In addition, we described few patients with point mutations. The expansion of trinucleotide repeats has been previously demonstrated to be the mutational mechanism associated with eight human diseases. Trinucleotide repeats occur both in coding and noncoding regions of the gene. Although trinucleotide repeats in the normal size range are relatively stable, expanded repeats are highly variable when transmitted from one generation to the next. For the eight previously described diseases, meiotic instability is generally associated with a mutational bias toward an increase in repeat number. Here, we analyze intergenerational variability in FRDA chromosomes in parent-carrier child pairs. In addition, we studied the stability of FRDA expanded alleles in male gametogenesis, directly analyzing male germ cells. 9 refs., 3 figs., 1 tab.

  7. Determination of gallium at trace levels using a spectrofluorimetric method in synthetic U-Ga and Ga-As solutions

    NASA Astrophysics Data System (ADS)

    Kara, Derya; Fisher, Andrew; Foulkes, Mike; Hill, Steve J.

    2010-01-01

    A simple, easy to use and selective spectrofluorimetric method for the determination of trace levels of gallium has been developed. A new Schiff base, N-o-vanillidine-2-amino-p-cresol (OVAC) was synthesized and its fluorescence activity with gallium investigated. Based on this chelation reaction, a spectrofluorimetric method has been developed for the determination of gallium in synthetically prepared Ga-U and Ga-As samples buffered at pH 4.0 using acetic acid-sodium acetate. The chelation reaction between Ga(III) and N-o-vanillidine-2-amino-p-cresol was very fast, requiring only 30 min at room temperature to complex completely. The limit of detection (LOD) (3 σ) for Ga(III) was 7.17 nM (0.50 μg L -1), determined from the analysis of 11 different solutions of 20 μg L -1 Ga(III).

  8. XPS and AFM Study of GaAs Surface Treatment

    SciTech Connect

    Contreras-Guerrero, R.; Wallace, R. M.; Aguirre-Francisco, S.; Herrera-Gomez, A.; Lopez-Lopez, M.

    2008-11-13

    Obtaining smooth and atomically clean surfaces is an important step in the preparation of a surface for device manufacturing. In this work different processes are evaluated for cleaning a GaAs surface. A good surface cleaning treatment is that which provides a high level of uniformity and controllability of the surface. Different techniques are useful as cleaning treatments depending on the growth process to be used. The goal is to remove the oxygen and carbon contaminants and then form a thin oxide film to protect the surface, which is easy to remove later with thermal desorption mechanism like molecular beam epitaxy (MBE) with minimal impact to the surface. In this study, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to characterize the structure of the surface, the composition, as well as detect oxygen and carbon contaminant on the GaAs surface. This study consists in two parts. The first part the surface was subjected to different chemical treatments. The chemical solutions were: (a)H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O(4:1:100), (b) HCl: H{sub 2}O(1:3), (c)NH{sub 4}OH 29%. The treatments (a) and (b) reduced the oxygen on the surface. Treatment (c) reduces carbon contamination. In the second part we made MOS devices on the surfaces treated. They were characterized by CV and IV electrical measurements. They show frequency dispersion.

  9. Oxygen defects in GaAs: A hybrid functional study

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-03-01

    Using hybrid density functional calculations, we address the structural properties, formation energies, and charge transition levels of a variety of oxygen defects in GaAs. The set of considered defects comprises the bridging O atom in a As-O-Ga configuration, interstitial O atoms in tetrahedral sites, and O atoms substitutional to either Ga (OGa) or As atoms (OAs). In addition, we consider an As vacancy containing two O atoms, for which the most stable configurations are found through the use of molecular dynamics simulations, and defect complexes involving a OAs defect bound to either one or two AsGa antisites, denoted AsGa-OAs and (AsGa)2-OAs , respectively. We find that the bridging O defect and the AsGa-OAs and (AsGa)2-OAs complexes are the most stable oxygen defects in GaAs. The actual occurrence of these defects is examined against two criteria. The first criterion concerns the stability against O dissociation and is evaluated via the calculation of dissociation energies. The second criterion involves the defect formation at thermodynamic equilibrium and is inferred from the comparison between the formation energy of the oxygen defect and that of its O-related dissociation product (bridging O defect). Both the AsGa-OAs and (AsGa)2-OAs complexes satisfy these criteria and are stable against O dissociation. Further analysis in cooled-down conditions leads us to dismiss the AsGa-OAs defect due to the more favorable bonding of two rather than one AsGa antisites. The conclusion that only the bridging O defect and the (AsGa)2-OAs complex are expected to occur is in accord with experimental observations.

  10. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    NASA Astrophysics Data System (ADS)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  11. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  12. Long-term radiation effects on GaAs solar cell characteristics

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Doviak, M. J.

    1978-01-01

    This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

  13. First principles study of bismuth alloying effects in GaAs saturable absorber.

    PubMed

    Li, Dechun; Yang, Ming; Zhao, Shengzhi; Cai, Yongqing; Feng, Yuanping

    2012-05-07

    First principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBi(x)As(1-x) alloy as semiconductor saturable absorber in Q-switched or mode-locked laser.

  14. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy.

    PubMed

    Ohno, Takeo; Oyama, Yutaka

    2012-02-01

    In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm(-2). They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  15. Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

    NASA Technical Reports Server (NTRS)

    Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

    2002-01-01

    Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

  16. Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic Readouts

    NASA Technical Reports Server (NTRS)

    Cunningham, T. J.; Fitzsimmons, M.

    1998-01-01

    The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.

  17. Anharmonicity in Light Scattering by Optical Phonons in GaAs1-xBix

    SciTech Connect

    Joshya, R. S.; Rajaji, V.; Narayana, Chandrabhas; Mascarenhas, Angelo; Kini, R. N.

    2016-05-28

    We present a Raman spectroscopic study of GaAs 1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs 1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBix.

  18. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  19. Direct Observation of the E_ Resonant State in GaAs1-xBix

    SciTech Connect

    Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

    2015-12-15

    Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

  20. Consideration of velocity saturation in the design of GaAs varactor diodes

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Peatman, William C. B.; Zimmermann, Ruediger; Zimmermann, Ralph

    1993-01-01

    The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. Experimental data is presented which confirms that improved multiplier performance can be achieved.

  1. High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

    NASA Technical Reports Server (NTRS)

    Frankel, Michael Y.; Whitaker, John F.; Mourou, Gerard A.; Smith, Frank W.; Calawa, Arthur R.

    1990-01-01

    A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

  2. Activation processes on GaAs photocathode by different currents of oxygen source

    NASA Astrophysics Data System (ADS)

    Miao, Zhuang; Shi, Feng; Cheng, Hongchang; Wang, Shufei; Zhang, Xiaohui; Yuan, Yuan; Chen, Chang

    2015-04-01

    In order to know the influence of activation processes on GaAs photocathodes, three GaAs samples were activated by a fixed current of cesium source and different currents of oxygen source. The current of caesium source is same during activation to ensure initial adsorption of caesium quantum is similar, which is the base to show the difference during alternation activation of caesium and oxygen. Analysed with the activation data, it is indicated that Cs-to-O current ratio of 1.07 is the optimum ratio to obtain higher sensitivity and better stability. According to double dipole model, stable and uniform double dipole layers of GaAs-O-Cs:Cs-O-Cs are formed and negative electron affinity is achieved on GaAs surface by activation with cesium and oxygen. The analytical result is just coincident with the model. Thus there is an efficient technological method to improve sensitivity and stability of GaAs photocathode.

  3. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    PubMed Central

    Ohno, Takeo; Oyama, Yutaka

    2012-01-01

    In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

  4. Cross-polarization beam coupling in photorefractive GaAs crystals

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Yeh, Pochi

    1988-01-01

    Theoretical and experimental investigations on the cross-polarization coupling of two contradirectional laser beams in a photorefractive GaAs crystal are reported. There is good agreement between these results.

  5. Activating frataxin expression by repeat-targeted nucleic acids

    PubMed Central

    Li, Liande; Matsui, Masayuki; Corey, David R.

    2016-01-01

    Friedreich's ataxia is an incurable genetic disorder caused by a mutant expansion of the trinucleotide GAA within an intronic FXN RNA. This expansion leads to reduced expression of frataxin (FXN) protein and evidence suggests that transcriptional repression is caused by an R-loop that forms between the expanded repeat RNA and complementary genomic DNA. Synthetic agents that increase levels of FXN protein might alleviate the disease. We demonstrate that introducing anti-GAA duplex RNAs or single-stranded locked nucleic acids into patient-derived cells increases FXN protein expression to levels similar to analogous wild-type cells. Our data are significant because synthetic nucleic acids that target GAA repeats can be lead compounds for restoring curative FXN levels. More broadly, our results demonstrate that interfering with R-loop formation can trigger gene activation and reveal a new strategy for upregulating gene expression. PMID:26842135

  6. Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit

    SciTech Connect

    Baca, A.G.; Casalnuovo, S.C.; Drummond, T.J.; Frye, G.C.; Heller, E.J.; Hietala, V.M.; Klem, J.F.

    1999-03-08

    An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications.

  7. Basic mechanisms study for MIS solar cell structures on GaAs

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  8. Characterization of two MMIC GaAs switch matrices at microwave frequencies

    NASA Technical Reports Server (NTRS)

    Fujikawa, Gene

    1990-01-01

    Monolithic GaAs microwave switch matrices for use in satellite switched, time division multiple access communication systems were developed. Two monolithic GaAs MESFET switch matrices were fabricated; one for switching operation at intermediate frequencies, 3.5 to 6.0 GHz, and another for switching at radio frequencies, 17.7 to 20.2 GHz. Key switch parameters were measured for both switch matrices.

  9. GaAs transistors formed by Be or Mg ion implantation

    NASA Technical Reports Server (NTRS)

    Hunsperger, R. G.; Marsh, O. J.

    1974-01-01

    N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

  10. Investigation of ZnSe-coated silicon substrates for GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

    1993-01-01

    Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

  11. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  12. A model for proton-irradiated GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

    1982-01-01

    A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

  13. Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

    PubMed

    Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

    2012-06-01

    The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

  14. New dynamic FET logic and serial memory circuits for VLSI GaAs technology

    NASA Technical Reports Server (NTRS)

    Eldin, A. G.

    1991-01-01

    The complexity of GaAs field effect transistor (FET) very large scale integration (VLSI) circuits is limited by the maximum power dissipation while the uniformity of the device parameters determines the functional yield. In this work, digital GaAs FET circuits are presented that eliminate the DC power dissipation and reduce the area to 50% of that of the conventional static circuits. Its larger tolerance to device parameter variations results in higher functional yield.

  15. Effect of nitride chemical passivation of the surface of GaAs photodiodes on their characteristics

    NASA Astrophysics Data System (ADS)

    Kontrosh, E. V.; Lebedeva, N. M.; Kalinovskiy, V. S.; Soldatenkov, F. Yu; Ulin, V. P.

    2016-11-01

    Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air and provide a decrease in the density of surface states involved in recombination processes. The device characteristics improved by nitridation are preserved during a long time.

  16. Molecular enhancement of ferromagnetism in GaAs /GaMnAs heterostructures

    NASA Astrophysics Data System (ADS)

    Carmeli, Itai; Bloom, Francisco; Gwinn, E. G.; Kreutz, T. C.; Scoby, Cheyne; Gossard, A. C.; Ray, S. G.; Naaman, Ron

    2006-09-01

    The authors investigate effects of chemisorption of polar organic molecules onto ferromagnetic GaAs /GaMnAs heterostructures. The chemisorbed heterostructures exhibit striking anisotropic enhancement of the magnetization, while GaAs substrates that are physisorbed with the same molecules show no change in magnetic properties. Thus the enhanced magnetism of the chemisorbed heterostructures reflects changes in spin alignment that arise from surface bonding of the organic monolayer.

  17. A GaAs MESFET Balanced Mixer with Very Low Intermodulation,

    DTIC Science & Technology

    1987-08-31

    Equivalent Circuit of a GaAs MESFET with No Bias Applied to...and has good conversion loss and good port impedances. ’p 3 II. CIRCUIT DESIGN AND DESCRIPTION Figure 1 shows the equivalent circuit of a MESFET ...GATE --- *VV AA p fl DAIN Vgi g(Vg) Rs SOURCE Fig. 1. Equivalent Circuit of a GaAs MESFET with No Bias Applied to the Drain BIAS X T4-1 . 1 HE Y

  18. A novel GAA-repeat-expansion-based mouse model of Friedreich’s ataxia

    PubMed Central

    Anjomani Virmouni, Sara; Ezzatizadeh, Vahid; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; Chutake, Yogesh; Pook, Mark A.

    2015-01-01

    Friedreich’s ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a GAA repeat expansion mutation within intron 1 of the FXN gene, resulting in reduced levels of frataxin protein. We have previously reported the generation of human FXN yeast artificial chromosome (YAC) transgenic FRDA mouse models containing 90–190 GAA repeats, but the presence of multiple GAA repeats within these mice is considered suboptimal. We now describe the cellular, molecular and behavioural characterisation of a newly developed YAC transgenic FRDA mouse model, designated YG8sR, which we have shown by DNA sequencing to contain a single pure GAA repeat expansion. The founder YG8sR mouse contained 120 GAA repeats but, due to intergenerational expansion, we have now established a colony of YG8sR mice that contain ~200 GAA repeats. We show that YG8sR mice have a single copy of the FXN transgene, which is integrated at a single site as confirmed by fluorescence in situ hybridisation (FISH) analysis of metaphase and interphase chromosomes. We have identified significant behavioural deficits, together with a degree of glucose intolerance and insulin hypersensitivity, in YG8sR FRDA mice compared with control Y47R and wild-type (WT) mice. We have also detected increased somatic GAA repeat instability in the brain and cerebellum of YG8sR mice, together with significantly reduced expression of FXN, FAST-1 and frataxin, and reduced aconitase activity, compared with Y47R mice. Furthermore, we have confirmed the presence of pathological vacuoles within neurons of the dorsal root ganglia (DRG) of YG8sR mice. These novel GAA-repeat-expansion-based YAC transgenic FRDA mice, which exhibit progressive FRDA-like pathology, represent an excellent model for the investigation of FRDA disease mechanisms and therapy. PMID:25681319

  19. Possibility of incongruous interface behavior of In on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Chin, K. K.; Lindau, I.

    1985-11-01

    Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.

  20. Improvement in GaAs Device Yield and Performance through Substrate Defect Gettering

    DTIC Science & Technology

    1980-06-01

    defects will be retained at tempera- tures aproaching those normally encountered in routine device fabrication or processing procedures. Therefore, we...insulating GaAs wafers or direct ion implantation and annealing of bulk insulating substrates. The latter method would appear to be straight forward process...capsulated Czochralski (LEC) growth methods to reduce the residual donor level and, thereby, produce semi-insulating GaAs without the intentional addition

  1. Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] in the Turkish population.

    PubMed

    Atalay, Ayfer; Koyuncu, Hasan; Köseler, Aylin; Ozkan, Anzel; Atalay, Erol O

    2007-01-01

    Hb Beograd [beta121(GH4)Glu-->Val, GAA-->GTA] is a rare variant first reported in Yugoslavia and then in Turkey, Australia and New Zealand. We report two further unrelated cases from Turkey. The importance of identifying Hb Beograd at the molecular level, especially in regions where Hb D-Los Angeles [beta121(GH4)Glu-->Gln, GAA-->CAA] is prevalent, is emphasized.

  2. Simulation of GaAs cluster formation on GaAs(00-1), AlAs(00-1), Si(001), and As1/Si(001) surfaces

    NASA Technical Reports Server (NTRS)

    Choi, D. K.; Koch, S. M.; Takai, T.; Halicioglu, T.; Tiller, W. A.

    1988-01-01

    Recently developed semiempirical potential energy functions for the Ga-As-Si and Ga-As-Al systems have been applied here to determine the excess formation energy for GaAs clusters on GaAs(00-1), AlAs(00-1), Si(001), and one atomic layer As-covered Si(001) substrates as a function of cluster size and cluster shape by the Monte Carlo technique. Pyramidal type ledges on the GaAs clusters are found to be the favored ledge for the first three layers while an inverted-pyramidal type ledge is also favored in certain cases for the As1/Si(001) substrate. Cluster formation at ledges is compared with cluster formation on a flat terrace for the Si(001) and the As1/Si(001) substrates.

  3. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

    SciTech Connect

    McGregor, D.S.; Rojeski, R.A.; Knoll, G.F. ); Terry, F.L. Jr.; East, J. ); Eisen, Y. )

    1994-06-15

    The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

  4. Antireflective disordered subwavelength structure on GaAs using spin-coated Ag ink mask.

    PubMed

    Yeo, Chan Il; Kwon, Ji Hye; Jang, Sung Jun; Lee, Yong Tak

    2012-08-13

    We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs d-SWSs rely on their geometric profiles, which were controlled by adjusting the distribution of Ag etch masks via changing the concentration of Ag atoms and the sintering temperature of Ag ink as well as the ICP etching conditions. The fabricated GaAs d-SWSs drastically reduced the reflection loss compared to that of bulk GaAs (>30%) in the wavelength range of 300-870 nm. The most desirable GaAs d-SWSs for practical solar cell applications exhibited a solar-weighted reflectance (SWR) of 2.12%, which is much lower than that of bulk GaAs (38.6%), and its incident angle-dependent SWR was also investigated.

  5. Supernormal hardness increase of dilute Ga(As, N) thin films

    NASA Astrophysics Data System (ADS)

    Berggren, Jonas; Hanke, Michael; Luna, Esperanza; Trampert, Achim

    2017-03-01

    Hardness of epitaxial GaAs1-xNx films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs0.969N0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs1-xNx layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

  6. Differences in stability and repeatability between GaAs and GaAlAs photocathodes

    NASA Astrophysics Data System (ADS)

    Xu, Yuan; Zhang, Yijun; Feng, Cheng; Shi, Feng; Zou, Jijun; Chen, Xinlong; Chang, Benkang

    2016-12-01

    For the applications in vacuum photodetectors and photoinjectors, a crucial limiting factor for conventional GaAs photocathodes is the limited lifetime, depending on the Cs-O activation layer vulnerable to the harmful residual gases. In order to develop a type of GaAs-based photocathode with good stability and repeatability, Cs/O activation and multiple recesiation experiments under the same preparation condition were performed on reflection-mode exponential-doped GaAs and GaAlAs photocathodes grown by metalorganic vapor phase epitaxy, and quantum efficiency and photocurrent decay were measured after activation and recesiation. The experimental results show that the photoemission characteristics on cathode degradation and repeatability are different between GaAs and GaAlAs photocathodes. In an unsatisfactory vacuum system, the operational lifetime for GaAlAs photocathode is nearly twice longer than that for GaAs photocathode after Cs/O activation under a high intensity illumination. After multiple recesiations, the quantum efficiency and operational lifetime for GaAlAs photocathode remain nearly unchanged, while those for GaAs photocathode become lower and lower with the increase of recesiation cycles, which reflects the superiority in stability and repeatability for GaAlAs photocathode in contrast to GaAs photocathode operating in the poor vacuum environment.

  7. Martensite transformations in Mn2NiGa thin films grown on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Schaefer, D. M.; Neckel, I. T.; Mazzaro, I.; Graff, I. L.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

    2016-11-01

    The purpose of this work is to investigate the correlation between magnetism and crystallographic structures of Mn2NiGa thin films grown by molecular beam epitaxy on GaAs(1 1 1) and GaAs(0 0 1) surfaces. The films present themselves with thermoelastic martensitic transformations upon cooling, and heating with high-temperature leads to austenite structures exhibiting a preferable (1 1 0) texture. X-ray diffraction measurements performed as a function of temperature reveal three different types of domain variants in the films within a large interval of temperatures. The austenite structures with lattice parameters ranging from 0.574 nm to 0.601 nm undergo volume conserving structural transitions to martensite with a c/a ratio of 1.2. The coexistence of variants with different domain configurations is induced on each GaAs substrate. Although the Curie temperatures (~360 K) are similar for films grown on GaAs(1 1 1) and GaAs (0 0 1) substrates, their saturation magnetizations are respectively 18 kA m-1 and 8 kA m-1 at room temperature and exhibit quite different magnetic irreversibility behaviors. Our results indicate that a multiplicity of possible equivalent variant domains on the GaAs surfaces makes it difficult to stabilize epitaxial films on these substrates.

  8. Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis

    SciTech Connect

    Bertuccio, G.; Longoni, A.; De Geronimo, G.; Canali, C.; Lanzieri, C.; Nava, F.

    1999-08-01

    This work aims to study the feasibility of the integration, on the same chip, of GaAs pixel detectors and frontend electronics employing GaAs metal semiconductor FET`s (MESFET`s) or high electron mobility transistors (HEMT`s). The interest of fully integrated GaAs systems lies in X and {gamma}-ray spectroscopy and Imaging for scientific, industrial, and medical applications. The system design criteria and the prediction of the performance have been derived on the basis of recent experimental results on semi-insulating GaAs pixel detectors. Measurements of the relevant parameters of GaAs FET`s suitable for the stringent requirements of a specroscopy-grade frontend amplifier are analyzed. It is shown that an optimized GaAs integrated system can reach an electronic noise level below 100 electrons rms (<1 keV FWHM) even at room temperature. Some open problems regarding the detector-electronics integration are highlighted and discussed.

  9. Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density

    NASA Astrophysics Data System (ADS)

    Liu, Yi; Wang, Wei; Shen, Yi; Shi, Jinshui; Zhang, Linwen; Xia, Liansheng

    2015-02-01

    Conduction modes of GaAs photoconductive semiconductor switch (PCSS) and their conditions are expounded. Laser diode and high-power picosecond Nd:YAG lasers are used as triggers for nonlinear mode and quasi-linear mode respectively in high-power conduction experiment. GaAs PCSS`s failure mechanisms and factors influencing lifetime in both modes are analyzed. It is found that the power density of laser at trigger time determines in which mode GaAs PCSS operates. Low-power laser triggers a nonlinear mode conduction in which GaAs PCSS`s lifetime is only 103, while high-power laser triggers a quasi-linear mode conduction in which GaAs PCSS`s lifetime is up to 105. According to the findings, the compact high-power pulsed power system based on mass of GaAs PCSSs demands for miniature high-power laser generators.

  10. Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

    NASA Technical Reports Server (NTRS)

    Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

    2003-01-01

    NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

  11. GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-Ray Detection

    DTIC Science & Technology

    2007-11-01

    currently available SI GaAs materials. This work deals with the fabrication of SI GaAs wafers with front and back end processing for Schottky and...GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-ray Detection by Fred Semendy, Satpal Singh, Mark Litz...originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-4308 November 2007 GaAs High Breakdown Voltage Front and Back

  12. Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

    DTIC Science & Technology

    2012-08-01

    Solar   Cells :     Epitaxial  Li>-­‐Off   GaAs   Solar   Cells   and  Enabling...Flexible, High-efficiency Solar Cells : Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c...n+- GaAs contact, 0.2 µm n-InGaAlP window, 25 nm p-InGaP BSF, 75 nm n- GaAs emitter, 0.15 µm MBE  Growth  of  Epi-­‐layers Solar

  13. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.

    PubMed

    Zhang, Zhi; Shi, Sui-Xing; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2015-01-26

    In this study, the effect of substrate orientation on the structural quality of Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that the substrate orientations can be used to manipulate the nanowire catalyst composition and the catalyst surface energy and, therefore, to alter the structural quality of GaAs nanowires grown on different substrates. Defect-free wurtzite-structured GaAs nanowires grown on the GaAs (110) substrate have been achieved under our growth conditions.

  14. Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch.

    PubMed

    Shi, Wei; Gui, Huaimeng; Zhang, Lin; Ma, Cheng; Li, Mengxia; Xu, Ming; Wang, Luyi

    2013-07-01

    The effects of trigger laser pulse width on the jitter time of a GaAs photoconductive semiconductor switch (PCSS) is investigated in the experiment. The laser is split into two optical beams by a cross grating to excite two 3 mm gap GaAs PCSSs in parallel at the same time. This work reveals that the jitter time of the GaAs PCSS is reduced as the trigger laser pulse width decreases. Our results overcome a significant obstacle that hinders the testing and theory of GaAs PCSSs in high-time-precision synchronous control.

  15. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

  16. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  17. GaAs Substrates for High-Power Diode Lasers

    NASA Astrophysics Data System (ADS)

    Mueller, Georg; Berwian, Patrick; Buhrig, Eberhard; Weinert, Berndt

    GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500,^-2) and Si-doping ( ~10^18,^-3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (= 3 mathrm{in} -> >=3,) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.GaAs crystals with diameters of 2 and 3in were grown in pyrolytic Boron Nitride (pBN) crucibles having a small-diameter seed section and a conical part. Boric oxide was used to fully encapsulate the crystal and the melt. An initial silicon content in the GaAs melt of c (melt) = 3 x10^19,^-3 has to be used in order to achieve a carrier concentration of n = (0.8- 2) x10^18,^-3, which is the substrate specification of the device manufacturer of the diode-laser. The EPD could be reduced to values between 500,^-2 and 50,^-2 with a Si-doping level of 8 x10^17 to 1 x10^18,^-3. Even the 3in wafers have rather large dislocation-free areas. The lowest EPDs ( <100,^-2) are achieved for long seed wells of the crucible.

  18. Role of sidewall diffusion in GaAs nanowire growth: A first-principles study

    NASA Astrophysics Data System (ADS)

    Pankoke, Volker; Sakong, Sung; Kratzer, Peter

    2012-08-01

    The molecular processes during the growth of GaAs nanowires in molecular beam epitaxy (MBE) are studied from first principles. For the wurtzite crystal structure of GaAs, which is formed exclusively in nanowire growth, potential energy surfaces for sidewall diffusion of Ga, As, and GaAs surface species are calculated using density functional theory. We compare materials transport on type-I and -II nanowires (with {101¯0} and {112¯0} facets of wurtzite GaAs, respectively) and discuss its role for materials supply to the growth zone at the nanowire tip. On the sidewalls of type-II nanowires, the diffusion barrier for Ga along the growth direction is particularly low, only 0.30 eV compared to 0.60 eV on type-I nanowires. For As adatoms, the corresponding diffusion barriers are 0.64 eV and 1.20 eV, respectively, and hence higher than for Ga adatoms. The GaAs molecule formed by the chemical surface reaction of Ga and As finds very stable binding sites on type-II sidewalls where it inserts itself into a chemical bond between surface atoms, triggering radial growth. In contrast, on type-I nanowires the GaAs molecule adsorbed with the As end towards the surface has a low diffusion barrier of 0.50 eV. Together with our previous finding that the gold particle at the nanowire tip is efficient in promoting dissociative adsorption of As2 molecules, we conclude that the influx of Ga adatoms from sidewall diffusion is very important to maintain stoichiometric growth of GaAs nanowires, in particular when a large V-III ratio is used in MBE.

  19. Control of adhesion to the mask of epitaxial laterally overgrown GaAs layers

    NASA Astrophysics Data System (ADS)

    Zytkiewicz, Z. R.; Domagała, J.; Dobosz, D.

    2001-12-01

    Strain commonly observed in layers grown by epitaxial lateral overgrowth (ELO) and arising from interaction of the layers with the mask underneath is studied. We show that GaAs ELO layers grown by liquid-phase epitaxy on SiO2-coated GaAs substrates are strain free if the laterally overgrown parts ("wings") of the layers hang over and have no direct contact with the mask. In other cases, tilting of the wings can be efficiently tailored by controlling the ratio of vertical to lateral growth rates at the beginning of ELO growth. In particular, this has been achieved by growing GaAs ELO layers on SiO2-coated GaAs substrates with increasing density of dislocations. Then, the ratio of vertical to lateral growth rates at the beginning of the growth is increased which in turn leads to reduction of the adhesion-induced bending of the ELO wings, as we observe by high-resolution x-ray diffraction. In the limiting case of heavily dislocated substrates, namely, on GaAs-coated Si, the vertical growth of GaAs ELO is so fast that air-bridged structures without any wing adhesion to the SiO2 mask are obtained. Next, the same model is used to explain our earlier data on negligible bending of GaAs ELO layers on graphite-masked GaAs substrates. In this case, delayed start of lateral growth is caused by the change of the shape of the melt in the corner between the sidewall of the ELO layer and the mask when SiO2 was replaced by graphite film not wetted by the gallium melt.

  20. Optically pumped room-temperature GaAs nanowire lasers

    NASA Astrophysics Data System (ADS)

    Saxena, Dhruv; Mokkapati, Sudha; Parkinson, Patrick; Jiang, Nian; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2013-12-01

    Near-infrared lasers are important for optical data communication, spectroscopy and medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of devices for three-dimensional device integration and hence are being extensively studied in the context of optoelectronic devices. Although visible and ultraviolet nanowire lasers have been demonstrated widely, progress towards room-temperature infrared nanowire lasers has been limited because of material quality issues and Auger recombination. (Al)GaAs is an important material system for infrared lasers that is extensively used for conventional lasers. GaAs has a very large surface recombination velocity, which is a serious issue for nanowire devices because of their large surface-to-volume ratio. Here, we demonstrate room-temperature lasing in core-shell-cap GaAs/AlGaAs/GaAs nanowires by properly designing the Fabry-Pérot cavity, optimizing the material quality and minimizing surface recombination. Our demonstration is a major step towards incorporating (Al)GaAs nanowire lasers into the design of nanoscale optoelectronic devices operating at near-infrared wavelengths.

  1. Ultrafast terahertz emission properties in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Aihua; Shi, Yulei; Zhou, Qingli

    2015-08-01

    Ultrafast carrier dynamics in Schottky barriers is an extremely active area of research in recent years. The observation of the generation of terahertz pulses from metal/semiconductor interfaces provides a technique to characterize electronic properties of these materials. However, a detailed analysis of these phenomena has not been performed satisfactorily. In this work, the measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors in the terahertz beams are also observed in the temperature-dependent measurements and the femtosecond pump-generation studies of the Au/GaAs interfaces. These effects can be fully explained in terms of the dynamics of carrier transfer in the Au/GaAs Schottky barriers, which involves the internal photoelectric emission and the electron tunneling effect, and picosecond time constants are found for these processes.

  2. GaAs quantum dot solar cell under concentrated radiation

    SciTech Connect

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-08-17

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V{sub OC}-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns.

  3. Radiation effects in GaAs AMOS solar cells

    NASA Technical Reports Server (NTRS)

    Shin, B. K.; Stirn, R. J.

    1979-01-01

    The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

  4. Planar GaAs diodes for THz frequency mixing applications

    NASA Technical Reports Server (NTRS)

    Bishop, William L.; Crowe, Thomas W.; Mattauch, Robert J.; Dossal, Hasan

    1992-01-01

    Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

  5. Migration processes of the As interstitial in GaAs

    NASA Astrophysics Data System (ADS)

    Wright, A. F.; Modine, N. A.

    2016-12-01

    Thermal migration processes of the As interstitial in GaAs were investigated using density-functional theory and the local-density approximation for exchange and correlation. The lowest-energy processes were found to involve the -1, 0, and +1 charge states, and to produce migration along ⟨110⟩-type directions. In the -1 and 0 charge states, migration proceeds via hops between split-interstitial stable configurations at bulk As sites through bridging saddle-point configurations in which the interstitial atom is equidistant from two adjacent bulk As sites. In the +1 charge state, the roles of these two configurations are approximately reversed and migration proceeds via hops between bridging stable configurations through higher-energy split-interstitial stable configurations bounded by a pair of distorted split-interstitial saddle-point configurations. The predicted activation energies for migration in the 0 and +1 charge states agree well with measurements in semi-insulating and p-type material, respectively. Also consistent with experiments, the approximate reversal of the stable and saddle-point configurations between the 0 and +1 charge states is predicted to enable carrier-induced migration with a residual activation energy of 0.05 eV.

  6. Growth mechanisms for GaAs nanowires grown in CBE

    NASA Astrophysics Data System (ADS)

    Persson, A. I.; Ohlsson, B. J.; Jeppesen, S.; Samuelson, L.

    2004-12-01

    We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures on (1 1 1) B-oriented substrates in chemical beam epitaxy (CBE), to establish the mechanisms that govern wire growth and to optimize growth conditions. The grown nanowires were characterized with a scanning electron microscope (SEM). We found two mechanisms to be of importance for wire growth: (i) sufficiently long diffusion length of the group-III material on the 2D substrate surface and on the side facets of the nanowire to obtain rod-shaped nanowires and (ii) growth conditions that suppress growth rate on adjacent surfaces to enhance the wire growth. Favorable conditions for these mechanisms are growth temperatures between 515 and 535 °C, and As-rich growth conditions. Furthermore, we suggest that the growth mechanism of nanowires in CBE is based on surface-selective-growth (SSG) with a solid seed particle rather than conventional vapor-liquid-solid (VLS) growth.

  7. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth.

  8. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  9. Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation

    NASA Astrophysics Data System (ADS)

    Hossin, M.; Johnson, C. M.; Wright, N. G.; O'Neill, A. G.

    2000-01-01

    A GaAs alternative to the Si IGBT, employing an implanted lateral channel in place of the usual MOSFET inversion channel, is proposed. A simplified analytical model shows that the relatively high ratio of electron to hole mobility in GaAs allows much lower anode emitter injection efficiencies to be used without compromising conductivity modulation of the base region. This, in turn, means that a higher proportion of the total device current is carried by electrons. Design strategies for the GaAs SGBT are investigated and applied in the design of an optimised unit cell. The optimised structure is compared with an equivalent Si IGBT structure by means of electrothermal and transient simulation. Electrothermal simulation shows the GaAs device to have useable performance at junction temperatures in excess of 300°C, a feature which is consistent with the wide band-gap of GaAs. Transient simulations show reduced minority carrier tailing effects at both turn-on and turn-off, with initial turn-off tail currents being reduced by a factor of 5 compared to the Si IGBT. The resulting reduction in turn-off loss allows switching frequencies to be increased by a factor of 4 for the same total losses. The excellent switching performance derives from the relatively low proportion of hole current needed to ensure effective conductivity modulation of the structure.

  10. The growth of high quality CdTe on GaAs by molecular beam epitaxy

    SciTech Connect

    Reno, J.L.; Carr, M.J.; Gourley, P.L. )

    1990-03-01

    We have grown CdTe (111) on oriented and misoriented GaAs (100) and have characterized the layers by photoluminescence microscopy (PLM) and transmission electron microscopy (TEM). Photoluminescence microscopy showed a totally different type of defect structure for the oriented substrate than for the misoriented substrates. The CdTe grown on the misoriented substrates exhibited only threading dislocations. The CdTe grown on oriented GaAs showed fewer threading dislocations but exhibited a random structure of loops. The loop structure observed by PLM has been identified by TEM as the boundary between twinned crystallites which extend from the CdTe/GaAs interface to the CdTe surface. When viewed along the growth axis, these boundaries between the columnar twins appear as loops and segments. Surface roughness of the GaAs substrate contributes to the initial growth of twinned material. This leads to competitive growth between the twins and the creation of the observed columnar twins. We present for the first time the growth of CdTe on patterned GaAs substrates. By growing on oriented GaAs(100) substrates that had been patterned prior to growth with 12 {mu}m mesas, it is possible to grow material on the mesa top that is twin free and has a low dislocation density.

  11. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules.

  12. Enhanced solar energy harvesting using top n-contact GaAs solar cell

    NASA Astrophysics Data System (ADS)

    Das, N. C.

    2015-05-01

    We fabricated single-junction solar cell on molecular beam epitaxially grown p-n junction on n-type gallium arsenide (GaAs) substrate. We used a germanium (Ge)/gold (Au)/nickel (Ni)/Au metal contact from the top side on a highly doped n+ epitaxial layer as well as the bottom side on an n-type GaAs substrate. We observed 10-15% increase in solar cell power when the top contact is used for the n+ GaAs epi layer compared to the bottom side n-type GaAs substrate. Solar cell fill factor, sheet, and shunt resistances are same for both the top and bottom contact type devices. We also observed higher external quantum efficiency (EQE) for top contact devices compared to bottom contact devices. We conclude that to achieve higher power, it is advantageous to use an n-type contact from a highly doped top n+ epitaxial layer rather than a bottom n-type GaAs substrate.

  13. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

    PubMed

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  14. Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

    NASA Technical Reports Server (NTRS)

    Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

    2003-01-01

    In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

  15. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    NASA Astrophysics Data System (ADS)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  16. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    PubMed Central

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  17. GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

    SciTech Connect

    Cardozo, Benjamin Lewin

    2004-01-01

    High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 1013 cm-3, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most likely due to the high compensation of the commercially grown GaAs absorbing layer, which restricts the depletion width of the device.

  18. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    SciTech Connect

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  19. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-20

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  20. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    NASA Astrophysics Data System (ADS)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  1. Defects in GaAs bulk crystals and multi-layers caused by In diffusion

    SciTech Connect

    Werner, P.; Baranowski, J.

    1993-04-01

    The objective was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 {mu}m into bulk GaAs during lh annealing at 550C (such conditions are typical for molecular beam epitaxy growth on GaAs wafers). This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain. To study the interaction of In with the GaAs lattice, In/GaAs multi-layers were grown by MBE at about 450C on a GaAs buffer layer. The interfaces of these structures showed misfit dislocations at islands of InAs besides the presence of lattice strain. Both types of samples showed microwave absorption signals typical for superconductivity. The most likely superconductive phases are small metastable inclusions, probably consisting amorphous Ga or In.

  2. Adjunctive β2-agonist treatment reduces glycogen independently of receptor-mediated acid α-glucosidase uptake in the limb muscles of mice with Pompe disease

    PubMed Central

    Farah, Benjamin L.; Madden, Lauran; Li, Songtao; Nance, Sierra; Bird, Andrew; Bursac, Nenad; Yen, Paul M.; Young, Sarah P.; Koeberl, Dwight D.

    2014-01-01

    Enzyme or gene replacement therapy with acid α-glucosidase (GAA) has achieved only partial efficacy in Pompe disease. We evaluated the effect of adjunctive clenbuterol treatment on cation-independent mannose-6-phosphate receptor (CI-MPR)-mediated uptake and intracellular trafficking of GAA during muscle-specific GAA expression with an adeno-associated virus (AAV) vector in GAA-knockout (KO) mice. Clenbuterol, which increases expression of CI-MPR in muscle, was administered with the AAV vector. This combination therapy increased latency during rotarod and wirehang testing at 12 wk, in comparison with vector alone. The mean urinary glucose tetrasaccharide (Glc4), a urinary biomarker, was lower in GAA-KO mice following combination therapy, compared with vector alone. Similarly, glycogen content was lower in cardiac and skeletal muscle following 12 wk of combination therapy in heart, quadriceps, diaphragm, and soleus, compared with vector alone. These data suggested that clenbuterol treatment enhanced trafficking of GAA to lysosomes, given that GAA was expressed within myofibers. The integral role of CI-MPR was demonstrated by the lack of effectiveness from clenbuterol in GAA-KO mice that lacked CI-MPR in muscle, where it failed to reverse the high glycogen content of the heart and diaphragm or impaired wirehang performance. However, the glycogen content of skeletal muscle was reduced by the addition of clenbuterol in the absence of CI-MPR, as was lysosomal vacuolation, which correlated with increased AKT signaling. In summary, β2-agonist treatment enhanced CI-MPR-mediated uptake and trafficking of GAA in mice with Pompe disease, and a similarly enhanced benefit might be expected in other lysosomal storage disorders.—Farah, B. L., Madden, L., Li, S., Nance, S., Bird, A., Bursac, N., Yen, P. M., Young, S. P., Koeberl, D. D. Adjunctive β2-agonist treatment reduces glycogen independently of receptor-mediated acid α-glucosidase uptake in the limb muscles of mice with

  3. Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength.

    PubMed

    Wu, Lin; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Wang, Reng; Liu, Ji

    2015-06-15

    We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.

  4. Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures

    DTIC Science & Technology

    2010-03-01

    OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT ELEVATED TEMPERATURES THESIS...ENP/10-M08 OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT ELEVATED TEMPERATURES THESIS Presented to the Faculty Department...2010 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED AFIT/GAP/ENP/10-M08 OPTICAL PROPERTIES OF SI, GE, GAAS, GASB, INAS, AND INP AT

  5. Interpolative modeling of GaAs FET S-parameter data bases for use in Monte Carlo simulations

    NASA Technical Reports Server (NTRS)

    Campbell, L.; Purviance, J.

    1992-01-01

    A statistical interpolation technique is presented for modeling GaAs FET S-parameter measurements for use in the statistical analysis and design of circuits. This is accomplished by interpolating among the measurements in a GaAs FET S-parameter data base in a statistically valid manner.

  6. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    SciTech Connect

    Juang, Bor-Chau Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Lin, Andrew; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.

    2015-03-16

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  7. ``EL2'' revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Kabiraj, D.; Ghosh, Subhasis

    2005-12-01

    By using a combination of detailed experimental studies, we identify the metastable and stable energy levels of EL2 in semi-insulating GaAs. These results are discussed in light of the recently proposed models for EL2 in GaAs.

  8. Oral co-administration of α-lipoic acid, quercetin and captopril prevents gallium arsenide toxicity in rats.

    PubMed

    Bhatt, Kapil; Flora, S J S

    2009-07-01

    Gallium arsenide (GaAs), an inter-metallic semiconductor, known to exhibit superior optical and electronic properties compared to silicon, promotes its use in semiconductor industries. Extensive use of GaAs will inevitably lead to an increase in the exposure of workers manufacturing these products. Antioxidants are exogenous or endogenous compounds acting in several ways, including scavenging reactive oxygen species (ROS) or their precursors, inhibiting ROS formation, and binding metal ions needed for the catalysis of ROS generation. In the present study we investigated the protective efficacy of α-lipoic acid, quercetin and captopril individually against gallium arsenide exposure. Co-administration of α-lipoic acid with GaAs was most effective in reducing GaAs induced inhibition of blood δ-aminolevulinic acid dehydratase (ALAD) activity, liver, kidney and brain reduced glutathione (GSH) level and elevation of oxidized glutathione (GSSG). Captopril, on the other hand was effective in reducing thiobarbituric acid reactive substance (TBARS) levels, while quercetin reduced ROS in liver and kidney. The results suggest comparatively better preventive efficacy of concomitant α-lipoic acid administration during Gallium arsenide exposure compared to quercetin and captopril in preventing GaAs induced oxidative stress.

  9. Spectrally resolved localized states in GaAs1‑ x Bi x

    NASA Astrophysics Data System (ADS)

    Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A.; Fluegel, Brian; Mascarenhas, Angelo

    2017-03-01

    The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1‑ x Bi x . In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1‑ x Bi x . Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1‑ x Bi x alloys.

  10. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.

  11. Experimental studies of the charge limit phenomenon in NEA GaAs photocathodes

    SciTech Connect

    Tang, H.; Alley, R.K.; Aoyagi, H.; Clendenin, J.E.; Frisch, J.C.; Mulhollan, G.A.; Saez, P.J.; Schultz, D.C.; Turner, J.L.

    1994-06-01

    Negative electron affinity GaAs photocathodes have been in continuous use at SLAC for generating polarized electron beams since early 1992. If the quantum efficiency of a GaAs cathode is below a critical value, the maximum photoemitted charge with photons of energies close to the band gap in a 2-ns pulse is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this novel charge limit phenomenon in a variety of GaAs photocathodes of different structures and doping densities. We find that the charge limit is strongly dependent on the cathode`s quantum efficiency and the extraction electric field, and to a lesser degree on the excitation laser wavelength. In addition, we show that the temporal behavior of the charge limit depends critically on the doping density.

  12. Experimental studies of the charge limit phenomenon in GaAs photocathodes

    SciTech Connect

    Tang, H.; Alley, R.; Aoyagi, H.; Clendenin, J.; Saez, P.; Schultz, D.; Turner, J.

    1993-10-01

    GaAs photocathodes have been in use for generating high intensity polarized electron beams (up to a peak current of 6 A in 2 ns pulses) for the SLC high energy physics program. If the quantum efficiency (measured at low light intensities) of a GaAs photocathode is below a certain level, the maximum photoemitted charge is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this charge limit phenomenon in a variety of GaAs photocathodes. The effects of the quantum efficiency, excitation laser wavelength, and extraction electric field on the charge limit have been examined. The temporal behavior of the charge limit as manifested in both intrapulse and interpulse effects has also been studied. These results will be discussed in light of possible mechanisms.

  13. GaAs Industry in Europe-Technologies, Trends and New Developments

    NASA Astrophysics Data System (ADS)

    Jung, Helmut; Blanck, Hervé; Bösch, Wolfgang; Mayock, Jim

    The GaAs industry has been growing immensely during recent years. This is mainly driven by the tremendous growth of the wireless communication market, which is still continuously growing. Additionally, an emerging mmW market with applications in automotive, defense and optoelectronics is further driving the demand for GaAs components. The two largest European GaAs fabrication companies, UMS and Filtronic are very well positioned to address the complete frequency range from 1GHz up to 100GHz for commercial, high volume low cost markets, as well as individual niche applications. An overview of the companies' structures, their processes and design capabilities and also their new product developments will be presented in this paper.

  14. CBE growth of (001) GaAs: RHEED and RD studies

    NASA Astrophysics Data System (ADS)

    Samuelson, L.; Junno, B.; Paulson, G.; Fornell, J. O.; Ledebo, L.

    1992-11-01

    A novel type of epitaxial growth system has been designed and optimized for studies of surface physics and epitaxial growth during chemical beam epitaxy (CBE). The work presented here deals with the growth of GaAs on (001) oriented GaAs, and is specifically focused on detailed studies of the surface modifications appearing during exposure to triethylgallium (TEG) or tertiarybutylarsine (TBA), as well as during continuous growth. Reflection high-energy electron diffraction (RHEED) is used to characterize surface reconstructions and to monitor monolayer growth oscillations. Optical reflectance-difference (RD) is used as a very sensitive probe to track the chemical admixture and the concentration of dimers on the surface. Examples are given of direct correlations between characteristics RD features and specific surface reconstructions as determined by RHEED. The surface reconstruction phase diagram for CBE growth of (001) GaAs using TBA is presented and compared with the case for MBE growth.

  15. Efficiency enhancement in GaAs solar cells using self-assembled microspheres.

    PubMed

    Chang, Te-Hung; Wu, Pei-Hsuan; Chen, Sheng-Hui; Chan, Chia-Hua; Lee, Cheng-Chung; Chen, Chii-Chang; Su, Yan-Kuin

    2009-04-13

    In this study we develop an efficient light harvesting scheme that can enhance the efficiency of GaAs solar cells using self-assembled microspheres. Based on the scattering of the microspheres and the theory of photonic crystals, the path length can be increased. In addition, the self-assembly of microspheres is one of the simplest and the fastest methods with which to build a 2D periodic structure. The experimental results are confirmed by the use of a simulation in which a finite-difference time-domain (FDTD) method is used to analyze the absorption and electric field of the 2D periodic structure. Both the results of the numerical simulations and the experimental results show an increase in the conversion power efficiency of GaAs solar cell of about 25% when 1 microm microspheres were assembled on the surface of GaAs solar cells.

  16. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  17. Selective thermal terahertz emission from GaAs and AlGaAs

    SciTech Connect

    Požela, K. Širmulis, E.; Kašalynas, I.; Šilėnas, A.; Požela, J.; Jucienė, V.

    2014-09-01

    The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled oscillations of free electron plasma and different branches of interface AlGaAs optical phonons. The effect of strong absorption of incident radiation with large oblique angle (26°) by heated GaAs and AlGaAs is revealed. The coherent THz radiation emission with the frequency of 7.6 THz from the heated high conductivity GaAs (n = 4 × 10{sup 18 }cm{sup −3}) layer is observed. The results are highly relevant to application in optoelectronic THz devices.

  18. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    SciTech Connect

    Yang, Shang-Hua; Jarrahi, Mona

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more than 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.

  19. Use of a corrugated surface to enhance radiation tolerance in a GaAs solar cell

    NASA Technical Reports Server (NTRS)

    Leon, Rosa P.; Piszczor, Michael F., Jr.

    1985-01-01

    The use of a corrugated surface on a GaAs solar cell and its effects on radiation resistance were studied. A compute code was developed to determine the performance of the cell for various geometric parameters. The large optical absorption coefficient of GaAs allows grooves to be only 4-5 micrometers deep. Using accepted material parameters for GaAs solar cells the theoretical performances were compared for various corrugated cells before and after minority carrier diffusion length degradation. The total power output was maximized for both n(+)/p and p(+)/n cells. Optimum values of 1.0-1.5 and 5.0 micrometers for groove and ridge widths respectively were determined.

  20. Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

    NASA Astrophysics Data System (ADS)

    Bergamaschini, Roberto; Bietti, Sergio; Castellano, Andrea; Frigeri, Cesare; Falub, Claudiu V.; Scaccabarozzi, Andrea; Bollani, Monica; von Känel, Hans; Miglio, Leo; Sanguinetti, Stefano

    2016-12-01

    Three-dimensional, epitaxial GaAs crystals are fabricated on micro-pillars patterned into Si(001) substrates by exploiting kinetically controlled growth conditions in Molecular Beam Epitaxy. The evolution of crystal morphology during growth is assessed by considering samples with increasing GaAs deposit thickness. Experimental results are interpreted by a kinetic growth model, which takes into account the fundamental aspects of the growth and mutual deposition flux shielding between neighboring crystals. Different substrate pattern geometries with dissimilar lateral sizes and periodicities of the Si micro-pillars are considered and self-similar crystal structures are recognized. It is demonstrated that the top faceting of the GaAs crystals is tunable, which can pave the way to locally engineer compound semiconductor quantum structures on Si(001) substrates.

  1. Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer

    NASA Astrophysics Data System (ADS)

    Zhao, Han; Kim, Hyoung-Sub; Zhu, Feng; Zhang, Manhong; OK, Injo; Park, Sung Il; Yum, Jung Hwan; Lee, Jack C.

    2007-10-01

    We present gallium arsenide (GaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with a thin HfO2 gate dielectric and a thin germanium nitride (GexNy) interfacial passivation layer (IPL). TaN /HfO2/GexNy/GaAs MOSCAPs show a low interface state density and a thin equivalent oxide thickness (1.6nm). Compared to GaAs MOSCAPs with germanium (Ge) IPL, the GexNy IPL has a smaller slow trap density, which is confirmed by improved C-V characteristics without humps near the flatband voltage. The lower rate of flatband voltage shift and gate leakage decreasing under constant gate voltage stress were also demonstrated in GaAs MOSCAPs with GexNy IPL than the Ge IPL.

  2. Nanoscale footprints of self-running gallium droplets on GaAs surface.

    PubMed

    Wu, Jiang; Wang, Zhiming M; Li, Alvason Z; Benamara, Mourad; Li, Shibin; Salamo, Gregory J

    2011-01-01

    In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.

  3. Gallium loading of gold seed for high yield of patterned GaAs nanowires

    SciTech Connect

    Boulanger, J. P.; Chia, A. C. E.; LaPierre, R. R.

    2014-08-25

    A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

  4. Application of pulsed GaAs diode lasers to spectral atmospheric monitoring and remote sensing

    NASA Astrophysics Data System (ADS)

    Pencheva, Vasilka H.; Penchev, S.; Naboko, Vassily N.; Naboko, Sergei V.

    1999-05-01

    We report new aspects of application of pulsed GaAs diode lasers, concerning absorption spectroscopy of water vapor of third oscillatory molecular overtone 8990 - 9012 angstroms, and Mie-scattering lidar signal in the 15 km range. It is accessible by the power characteristics of a system utilizing the powerful `chip-stack' GaAs diode lasers, employing optimal photodetection technique based on an analyzing system with computer operated boxcar. Data on atmospheric aerosol backscatter signal acquired by DL lidar are presented with relevance to the potential of complex atmospheric remote sensing. GaAs diode lasers, with radiation matching water vapor spectrum of absorption- coefficients of 0.5 - 5 km-1 in Beer's law, are shown feasible for DIAL monitoring of atmospheric humidity.

  5. Deep levels in semi-insulating LEC GaAs before and after silicon implantation

    SciTech Connect

    Dindo, S.; Abdel-Motaleb, I.; Lowe, K.; Tang, W.; Young, L.

    1985-11-01

    The deep trapping levels present before ion implantation of silicon into the semi-insulating LEC GaAs starting material were investigated using optical transient current spectroscopy (OTCS). MESFET channel current deep level transient spectroscopy (DLTS) was used for the implanted material. With a silicon nitride layer used t encapsulate the GaAs for postimplantation annealing and with implantation directly into the GaAs, it was found tha of seven or more deep levels seen in the semi-insulating substrate prior to silicon implantation only the level believed to be EL12 remained. On implanting through a thin Si/sub 3/N/sub 4/ encapsulating layer and annealing under Si/sub 3/N/sub 4/, only EL2 was found. With a silicon dioxide layer as an encapsulant, two traps remained and two apparently unreported levels appeared.

  6. Growth of GaAs crystals from the melt in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1988-01-01

    The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

  7. Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

    1986-01-01

    A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

  8. Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

    PubMed Central

    Zhou, Wei; Chen, Xiao-Jia; Zhang, Jian-Bo; Li, Xin-Hua; Wang, Yu-Qi; Goncharov, Alexander F.

    2014-01-01

    The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments. PMID:25253566

  9. Native and irradiation-induced monovacancies in n -type and semi-insulating GaAs

    SciTech Connect

    Corbel, C.; Pierre, F. ); Hautojaervi, P.; Saarinen, K. ); Moser, P. )

    1990-05-15

    Defects induced by electron irradiation in semi-insulating and {ital n}-type GaAs crystals have been characterized by positron-lifetime measurements. We conclude that electron irradiation with energies of 1.5--3 MeV produces negative monovacancies and negative ions at low and room temperature. The results also show that the native monovacancy defects in lightly {ital n}-type GaAs change their properties under irradiation. We relate this change to the existence of an ionization level {minus}{r arrow}0 or 0{r arrow}+ of the native monovacancy defects in the upper half of the band gap. We propose that irradiation produces negative Ga{sub As} antisites and negative {ital V}{sub Ga} vacancies. In {ital n}-type GaAs the behavior of the native defects under irradiation is in agreement with their earlier assignment to {ital V}{sub As}.

  10. Analysis and Improvement of MM-Wave GaAs MESFET’s

    DTIC Science & Technology

    1988-05-01

    Weiq MICROWAVE LABORATORY REPORT NO. 88-P-2 00 ANALYSIS AND IMPROVEMENT OF M-WAVE GaAs MESFET’S TECHNICAL REPORT SAMIR M. EL-AZHARY EL-GRAZALY and j... Analysis and Improvement of M-Wave GaAs MESFET’S .12 PERSONAL AUTHOR(S) Sainir M. E1-Azhary El-Ghazaly and Tatsuo Itoh 13a. TYPE OF REPORT 13b. TIME...Unhru ounced - Justt ’"cat!o . K-Aval i,’,b 1 v -- A I L It~~ -R1 MICROWAVE LABORATORY REPORT NO. 88-P-2 ANALYSIS AND IMPROVEMENT OF MM-WAVE GaAs

  11. Colloidal GaAs quantum wires: solution-liquid-solid synthesis and quantum-confinement studies.

    PubMed

    Dong, Angang; Yu, Heng; Wang, Fudong; Buhro, William E

    2008-05-07

    Colloidal GaAs quantum wires with diameters of 5-11 nm and narrow diameter distributions (standard deviation = 12-21% of the mean diameter) are grown by two methods based on the solution-liquid-solid (SLS) mechanism. Resolved excitonic absorption features arising from GaAs quantum wires are detected, allowing extraction of the size-dependent effective band gaps of the wires. The results allow the first systematic comparison of the size dependences of the effective band gaps in corresponding sets of semiconductor quantum wires and quantum wells. The GaAs quantum wire and well band gaps scale according to the prediction of a simple effective-mass-approximation, particle-in-a-box (EMA-PIB) model, which estimates the kinetic confinement energies of electron-hole pairs in quantum nanostructures of different shapes and confinement dimensionalities.

  12. Ultrathin MgO diffusion barriers for ferromagnetic electrodes on GaAs(001).

    PubMed

    Sarkar, Anirban; Wang, Shibo; Grafeneder, Wolfgang; Arndt, Martin; Koch, Reinhold

    2015-04-24

    Ultrathin MgO(100) films serving as a diffusion barrier between ferromagnetic electrodes and GaAs(001) semiconductor templates have been investigated. Using Fe as an exemplary ferromagnetic material, heterostructures of Fe/MgO/GaAs(001) were prepared at 200 °C with the MgO thickness ranging from 1.5 to 3 nm. Structural characterization reveals very good crystalline ordering in all layers of the heterostructure. Auger electron spectroscopy depth-profiling and cross-sectional high-resolution transmission electron microscopy evidence diffusion of Fe into MgO and-for too thin MgO barriers-further into GaAs(001). Our results recommend a MgO barrier thickness larger than or equal to 2.6 nm for its application as a reliable diffusion barrier on GaAs(001) in spintronics devices.

  13. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  14. Charge-state dependence of energy loss of MeV dimers in GaAs(100)

    SciTech Connect

    Sundaravel, B.; David, Christopher; Balamurugan, A. K.; Rajagopalan, S.; Tyagi, A. K.; Panigrahi, B. K.; Nair, K. G. M.; Viswanathan, B.

    2006-04-15

    Carbon and oxygen dimers with charge states 1+ and 3+ were implanted into GaAs along the [100] direction at an energy of 0.5 MeV/atom. The defect depth profiles are extracted from Rutherford backscattering spectrometry and channeling. The depth profile of carbon is extracted from secondary ion mass spectrometry measurements. The defect density produced by dimer ions is larger than monomer ions. The depth profile of carbon in dimer implanted GaAs is deeper than that of monomer implanted GaAs showing negative molecular effect. The defect depth profile of oxygen dimer implanted GaAs is deeper for 3+ than that for 1+ charge state. This indicates that energy loss of O{sub 2}{sup 3+} is smaller than that of O{sub 2}{sup +}. It is attributed to charge asymmetry and a higher degree of alignment of O{sub 2}{sup 3+} along the [100] axis of GaAs.

  15. Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Gebauer, J.; Weber, E. R.; Jäger, N. D.; Urban, K.; Ebert, Ph.

    2003-03-01

    We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancy-donor complexes (VGa-TeAs). We show quantitatively that the compensation in Te-doped bulk GaAs is exclusively caused by vacancy-donor complexes in contrast to Si-doped GaAs. This is explained with the Fermi-level effect as the universal mechanism leading to Ga vacancy formation in n-doped GaAs, and a Coulomb interaction leading to the formation of the complexes. The quantification of the carrier compensation yields a -3e charge state of VGa in bulk GaAs.

  16. Solid phase epitaxial regrowth of (100)GaAs

    SciTech Connect

    Almonte, Marlene Isabel

    1996-02-01

    This thesis showed that low temperature (250°C) SPE of stoichiometrically balanced ion implanted GaAs layers can yield good epitaxial recovery for doses near the amorphization threshold. For 250°C anneals, most of the regrowth occurred in the first 10 min. HRTEM revealed much lower stacking fault density in the co-implanted sample than in the As-only and Ga-only samples with comparable doses. After low temp annealing, the nonstoichiometric samples had a large number of residual defects. For higher dose implants, very high temperatures (700°C) were needed to remove residual defects for all samples. The stoichiometrically balanced layer did not regrow better than the Ga-only and As-only samples. The co-implanted sample exhibited a thinner amorphous layer and a room temperature (RT) annealing effect. The amorphous layer regrew about 5 nm, suggesting that stoichiometrically balanced amorphous layers can regrow even at RT. Mechanisms for solid phase crystallization in (100)GasAs is discussed: nucleation and growth of randomly oriented crystallites and SPE. These two mechanisms compete in compound semiconductors at much lower temperatures than in Si. For the low dose As-only and Ga-only samples with low-temp anneals, both mechanisms are active. For this amorphization threshold dose, crystallites remain in the amorphous layer for all as-implants. 250°C annealing showed recrystallization from the surface and bulk for these samples; for the co-implant, the mechanism is not evident.

  17. GaAs QWIP Array Containing More Than a Million Pixels

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

    2005-01-01

    A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

  18. Production of nanometer-size GaAs nanocristals by nanosecond laser ablation in liquid.

    PubMed

    Abderrafi, Kamal; Jiménez, Ernesto; Ben, Teresa; Molina, Sergio I; Ibáñez, Rafael; Chirvony, Vladimir; Martínez-Pastor, Juan P

    2012-08-01

    This paper reports the formation and characterization of spherical GaAs quantum dots obtained by nanosecond pulsed laser ablation in a liquid (ethanol or methanol). The produced bare GaAs nanoparticles demonstrate rather narrow size distribution which depends on the applied laser power density (from 4.25 to 13.9 J/cm2 in our experiments) and is as low as 2.5 nm for the highest power used. The absolute value of the average diameter also decreases significantly, from 13.7 to 8.7 nm, as the laser power increases in this interval. Due to the narrow nanoparticle size dispersion achieved at the highest laser powers two absorption band edges are clearly distinguishable at about 1.72 and 3.15 eV which are ascribed to E0 and E1 effective optical transitions, respectively. A comparison of the energies with those known for bulk GaAs allows one to conclude that an average diameter of the investigated GaAs nanoparticles is close to 10 nm, i.e., they are quantum dots. High resolution transmission electron microscopy (HRTEM) images show that the bare GaAs nanoparticles are nanocrystalline, but many of them exhibit single/multiple twin boundary defects or even polycrystallinity. The formation of the GaAs crystalline core capped with a SiO2 shell was demonstrated by HRTEM and energy dispersive X-ray (EDX) spectroscopy. Effective band edges can be better distinguished in SiO2 capped nanoparticles than in bare ones, In both cases the band edges are correlated with size quantum confinement effect.

  19. Characterization of as-grown and annealed GaAs: Structural defects and electrical properties

    SciTech Connect

    Lee, B.T.

    1988-07-01

    Structural defects in GaAs related to excess As were characterized and their behavior upon heat treatments studied. The observed defects included precipitates and dislocations. Results showed most of the precipitates in As-rich GaAs to the rhombohedral arsenic. Two exceptions were observed in an In-doped LEC (liguid encapsulated Czochralski) GaAs, which were As-rich but could not be further identified. Some of the observed As precipitates showed a simple orientation relationship with the matrix which yields structural coherence between As precipitates and GaAs matrix. Other As precipitates showed less coherent orientation. The dislocation loops in As-rich GaAs consisted a faulted loop with Shockley type Burgers vector and a perfect loop associated with an extra /l brace/111/r brace/ plane. It was proposed that these loops were formed as a result of dual condensation of both excess As interstitials and Ga vacancies, followed by generation and movement of Shockley partial dislocations. These precipitates and dislocation loops disappear after annealing, indicating a solvus temperature between 600--700/degree/C. The EL2 concentration increased as the defects dissolved, showing the defects to be the source of the excess As required to form EL2. The implication is that the As interstitial and Ga vacancies coexist in GaAs at high temperatures, which indicates that these point defects are responsible for the formation of arsenic antisites by direct combination. During the cooling period, they freeze into the matrix as point defects during a rapid cooling and condense as dislocation loops and precipitates during very slow cooling, in the dislocation-free region of the crystals. Around dislocations, the excess As precipitates heterogeneously even during rapid cooling. 217 refs.

  20. Low temperature growth and electrical characterization of insulators for GaAs MISFETS

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1981-01-01

    Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

  1. Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix

    NASA Astrophysics Data System (ADS)

    Y, H. Chen; Z, Yang; Xu, Bo; Wang, Zhan-guo; Liang, Ji-ben

    1997-12-01

    In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

  2. Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si.

    PubMed

    Lee, Ling; Fan, Wen-Chung; Ku, Jui-Tai; Chang, Wen-Hao; Chen, Wei-Kuo; Chou, Wu-Ching; Ko, Chih-Hsin; Wu, Cheng-Hsien; Lin, You-Ru; Wann, Clement H; Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin

    2010-11-19

    The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

  3. Pseudo-Rhombus-Shaped Subwavelength Crossed Gratings of GaAs for Broadband Antireflection

    NASA Astrophysics Data System (ADS)

    Chen, Xi; Fan, Zhong-Chao; Zhang, Jing; Song, Guo-Feng; Chen, Liang-Hui

    2010-12-01

    Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist (PR) mask. Conventional dot PR mask is also generated, and both patterns are transferred into a underlying GaAs substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings (SWCGs) to mimic the moth-eye structure. In comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped GaAs SWCGs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%.

  4. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Kang, M.; Beskin, I.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S.

    2014-05-01

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  5. A thermochemical model of radiation damage and annealing applied to GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

    1981-01-01

    Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

  6. Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.

    PubMed

    Yu, Haohai; Zhang, Huaijin; Wang, Zhengping; Wang, Jiyang; Yu, Yonggui; Jiang, Minhua; Tang, Dingyuan; Xie, Guoqiang; Luo, Hang

    2008-02-01

    We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.

  7. Electrophysical Properties of GaAs P-I-N Structures for Concentrator Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Kósa, Arpád; Mikolášek, Miroslav; Stuchlíková, Ľubica; Harmatha, Ladislav; Dawidowski, Wojciech; Ściana, Beata; Tłaczała, Marek

    2016-09-01

    This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I-V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I-V measurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDn and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

  8. Ion back-bombardment of GaAs photocathodes inside dc high voltage electron guns

    SciTech Connect

    Joseph Grames; Philip Adderley; Joshua Brittian; Daniel Charles; James Clark; John Hansknecht; Benard Poelker; Marcy Stutzman; Kenneth Surles-law

    2005-05-01

    DC high voltage GaAs photoguns are key components at accelerator facilities worldwide. New experiments and new accelerator facilities demand improved performance from these guns, in particular higher current operation and longer photocathode operating lifetime. This conference submission explores bulk GaAs photocathode lifetime as a function of beam current, active photocathode area, laser spot size and the vacuum of the gun and beam line. Lifetime measurements were made at 100 microamps, a beam current relevant for accelerators like CEBAF, and at beam currents of 1 milliamps and 5 milliamps, a regime that is interesting for high current Free Electron Laser (FEL) and Energy Recovery Linac (ERL) operation.

  9. Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Kreuzer, Stephan; Wegscheider, Werner; Weiss, Dieter

    2001-06-01

    A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I-V measurements show a pronounced nonlinearity. Their variation with temperature depends strongly on the barrier thickness which is weak for the 6 nm barriers, a clear indication for quantum mechanical tunneling as the dominant transport channel.

  10. Epitaxial Growth and Electro-Optical Properties of Metal GaAs Superlattices.

    DTIC Science & Technology

    1991-05-31

    34Phase sta- bility versus the lattice mismatch of (100)Col-.Ga. thin films on (100)GaAs," J. Vac. Sci. Technol. (in press). T. C. Kuo and K. L. Wang...and annealing of Co-,Ga, thin films on (100)GaAs," J. Mats. Res. (submitted to). (b.) Published Papers in Referred Journals R. A. Fiscer, H. D. Kaesz...and Y. K. Kim: "Deposition of transition-metal and mixed- metal thin films from organometallic precursors," New J. Chem. 14, 527-534 (1990). Y. K

  11. InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

    SciTech Connect

    Lee, J. H.; Wang, Zh. M.; Strom, N. W.; Mazur, Yu. I.; Salamo, G. J.

    2006-11-13

    Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

  12. Behavior of Cu and Zn Impurities on GaAs Wafer Surfaces

    NASA Astrophysics Data System (ADS)

    Shibaya, Hiroshi

    1995-08-01

    Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.

  13. Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces

    SciTech Connect

    Wu, J. H.; Ye, W.; Cardozo, B. L.; Saltzman, D.; Sun, K.; Sun, H.; Mansfield, J. F.; Goldman, R. S.

    2009-10-12

    We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga{sup +} FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence)

  14. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  15. Carbon doping in GaAs grown by MOVPE with trimethylgallium and triethylarsenic

    NASA Astrophysics Data System (ADS)

    Pak, Kangsa; Ashizuka, Kazuaki; Fukazawa, Hidetaka; Yamashita, Seiji; Takano, Yasushi; Yonezu, Hiroo

    1990-12-01

    Heavily carbon doped GaAs epitaxial layers were grown by low-pressure MOVPE using TMGa and TEAs as the source materials. GaAs epitaxial layers with hole concentrations up to 2.4×10 20 cm -3 were obtained. The hole concentrations of the films increased as the growth temperature (500-600°C) and/or the growth pressure (10-100 Torr) decreased, and were less dependent on V/III molar ratio (10-30). The uniform incorporation of carbon atoms during the growth was confirmed from SIMS measurements.

  16. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

    NASA Astrophysics Data System (ADS)

    Gebauer, J.; Lausmann, M.; Staab, T. E. M.; Krause-Rehberg, R.; Hakala, M.; Puska, M. J.

    1999-07-01

    Native vacancies in Te-doped (5×1016-5×1018 cm-3) GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy-TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

  17. Ferroelectric Pb(Zr,Ti)O{sub 3} epitaxial layers on GaAs

    SciTech Connect

    Louahadj, L.; Le Bourdais, D.; Agnus, G.; Pillard, V.; Lecoeur, P.; Largeau, L.; Mazet, L.; Bachelet, R.; Regreny, P.; Dubourdieu, C.; Gautier, B.; Saint-Girons, G.; Albertini, D.

    2013-11-18

    Ferroelectric epitaxial Pb(Zr,Ti)O{sub 3} (PZT) layers were grown by pulsed laser deposition on SrTiO{sub 3}/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO{sub 3}/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c-domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

  18. Selective growth of GaAs by organometallic vapor phase epitaxy at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Azoulay, R.; Dugrand, L.

    1991-01-01

    Complete selective epitaxy of GaAs by organometallic vapor phase epitaxy at atmospheric pressure was achieved by using TMG, AsH3, and AsCl3 as starting gases. Selectivity was observed at growth temperatures ranging from 650 to 750 °C. The blocking of polycrystal deposition on the mask, Si3N4, or W, is attributed to the adsorption of HCl on the mask, thus preventing the nucleation of GaAs. On the openings, the growth rate may be adjusted by controlling the TMG/AsCl3 ratio. When TMG/AsCl3<1, no growth occurs, but etching is observed.

  19. Helicity-dependent photocurrent in a (110) GaAs quantum well stack

    NASA Astrophysics Data System (ADS)

    Schmadel, D. C.; Kim, M.-H.; Sushkov, A. B.; Jenkins, G. S.; Koralek, J. D.; Moore, J. E.; Orenstein, J.; Ohno, Yuzo; Ohno, Hideo; Drew, H. D.

    2013-03-01

    There have been many reports on the circular photogalvanic effect (CPGE) in GaAs quantum wells. A recent theoretical study suggests that the CPGE can be governed by a quantum confinement-induced Berry phase effect that depends only on the quantum-well width and crystal orientation (J.E. Moore, Phys. Rev. Lett. 2010). We have measured the photocurrent in a (110)-oriented GaAs quantum well stack under illumination of circularly polarized THz radiation. We will report measurements of the helicity-driven photocurrent as a function of frequency, polarization, angle of incident, and temperature, and compare with theoretical predictions of the Berry phase contribution.

  20. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    NASA Technical Reports Server (NTRS)

    Bhimnathwala, H. G.; Tyagi, S. D.; Bothra, S.; Ghandhi, S. K.; Borrego, J. M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

  1. Radiation testing of GaAs on CRRES and LIPS experiment

    NASA Technical Reports Server (NTRS)

    Trumble, T. M.; Masloski, K.

    1984-01-01

    The radiation damage of solar cells has become a prime concern to the U.S. Air Force due to longer satellite lifetime requirements. Flight experiments were undertaken on the Navy Living Plume Shield (LPS) satellite and the NASA/Air Force Combined Release and Radiation Effects Satellite (CRRES) to complement existing radiation testing. Each experiment, the rationale behind it, and its approach and status are presented. The effect of space radiation on gallium arsenide (GaAs) solar cells was the central parameter investigated. Specifications of the GaAs solar cells are given.

  2. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  3. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    PubMed

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  4. Patterning of GaAs and Si substrates using self-organized Al2O3 templates and epitaxial growth of GaAs nanostructures

    NASA Astrophysics Data System (ADS)

    Kumari, Archana; Hatch, John; Kwon, Jaesuk; Zhang, Xin; Fraser, Everett; Kim, Chae Hyun; Zeng, Hao; Luo, Hong

    2013-03-01

    Reactive ion etching is used with Al2O3 templates to pattern SiO2 films deposited on GaAs and Si substrates. The technique allows nanopatterning of substrates without photo or e-beam lithography. The SiO2 film pattern consists of holes of about 80 nm diameter with a pitch of about 100 nm. GaAs nanostructures are grown on the patterned substrates by molecular beam epitaxy. The observed arrays of nanostructures closely follow the patterns on SiO2. Several types of structures are observed depending on the growth conditions, including pillars with flat hexagonal tops and pyramidal triangular tops. Characterization of the structures will be discussed. This work was supported by NSF DMR1006286. Intelligent Epitaxy Technology, Inc., 1250 E. Collins Blvd., Richardson, TX 75081, USA

  5. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    PubMed

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

  6. Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction.

    PubMed

    Köhl, Martin; Schroth, Philipp; Minkevich, Andrey A; Hornung, Jean Wolfgang; Dimakis, Emmanouil; Somaschini, Claudio; Geelhaar, Lutz; Aschenbrenner, Timo; Lazarev, Sergey; Grigoriev, Daniil; Pietsch, Ullrich; Baumbach, Tilo

    2015-01-01

    In GaAs nanowires grown along the cubic [111]c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18-25 nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.

  7. Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs substrates

    NASA Astrophysics Data System (ADS)

    Guan, Yingxin; Forghani, Kamran; Kim, Honghyuk; Babcock, Susan E.; Mawst, Luke J.; Kuech, Thomas F.

    2017-04-01

    The influence of the surface step termination on the metal-organic vapor phase epitaxy of GaAs1-yBiy was explored by examining the epitaxial layer growth rate, composition, and morphology characteristics on the offcut and mesa-patterned (001) GaAs substrates. Vicinal surfaces offcut to (111)B with a high density of As-terminated steps ('B-steps') increased the GaAs1-yBiy layer growth rate as well as possessed the fastest lateral growth rate on mesa-patterned substrates at a growth temperature of 420 °C, indicating that B-steps enhanced the Ga incorporation. With Bi accumulation on the surface, the Ga incorporation rate was reduced by the Bi preferential presence at B-steps blocking the Ga incorporation. Vicinal surfaces offcut to (111)A, which generated Ga-terminated steps ('A-steps') enhanced the Bi incorporation rate during growth at 380 °C. This work reveals that the surface step termination plays an important role in the growth of the metastable alloy. Appropriate choices of both the substrate surface-step structure and other growth parameters could lead to an enhanced Bi incorporation.

  8. Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compounds

    NASA Astrophysics Data System (ADS)

    Okumura, H.; Yoshida, S.; Misawa, S.; Sakuma, E.

    1992-05-01

    GaAs and GaN epilayers were grown on GaAs substrates by gas source molecular beam epitaxy technique using triethylarsine (TEAs) and diethylarsine (DEAsH) as As sources, and dimethylhydrazine (DMHy) as an N source. It was found that GaAs grows layer by layer even when organic arsine molecular sources are used. Cubic GaN was found to grow epitaxially on sufficiently nitrided surfaces of GaAs (001) substrates, in contrast with the growth of hexagonal GaN on GaAs (111) surfaces. It was also found that nitridation of GaAs surfaces does not occur when DEAsH and DMHy beams are supplied onto the GaAs substrates, simultaneously. Thus, GaN/GaAs multilayers were obtained only by intermittent supply of a DEAsH beam.

  9. Adjunctive β2-agonist treatment reduces glycogen independently of receptor-mediated acid α-glucosidase uptake in the limb muscles of mice with Pompe disease.

    PubMed

    Farah, Benjamin L; Madden, Lauran; Li, Songtao; Nance, Sierra; Bird, Andrew; Bursac, Nenad; Yen, Paul M; Young, Sarah P; Koeberl, Dwight D

    2014-05-01

    Enzyme or gene replacement therapy with acid α-glucosidase (GAA) has achieved only partial efficacy in Pompe disease. We evaluated the effect of adjunctive clenbuterol treatment on cation-independent mannose-6-phosphate receptor (CI-MPR)-mediated uptake and intracellular trafficking of GAA during muscle-specific GAA expression with an adeno-associated virus (AAV) vector in GAA-knockout (KO) mice. Clenbuterol, which increases expression of CI-MPR in muscle, was administered with the AAV vector. This combination therapy increased latency during rotarod and wirehang testing at 12 wk, in comparison with vector alone. The mean urinary glucose tetrasaccharide (Glc4), a urinary biomarker, was lower in GAA-KO mice following combination therapy, compared with vector alone. Similarly, glycogen content was lower in cardiac and skeletal muscle following 12 wk of combination therapy in heart, quadriceps, diaphragm, and soleus, compared with vector alone. These data suggested that clenbuterol treatment enhanced trafficking of GAA to lysosomes, given that GAA was expressed within myofibers. The integral role of CI-MPR was demonstrated by the lack of effectiveness from clenbuterol in GAA-KO mice that lacked CI-MPR in muscle, where it failed to reverse the high glycogen content of the heart and diaphragm or impaired wirehang performance. However, the glycogen content of skeletal muscle was reduced by the addition of clenbuterol in the absence of CI-MPR, as was lysosomal vacuolation, which correlated with increased AKT signaling. In summary, β2-agonist treatment enhanced CI-MPR-mediated uptake and trafficking of GAA in mice with Pompe disease, and a similarly enhanced benefit might be expected in other lysosomal storage disorders.

  10. Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy.

    PubMed

    Somaschini, Claudio; Bietti, Sergio; Trampert, Achim; Jahn, Uwe; Hauswald, Christian; Riechert, Henning; Sanguinetti, Stefano; Geelhaar, Lutz

    2013-08-14

    We present a novel approach for the growth of GaAs nanowires (NWs) with controllable number density and diameter, which consists of the combination between droplet epitaxy (DE) and self-assisted NW growth. In our method, GaAs islands are initially formed on Si(111) by DE and, subsequently, GaAs NWs are selectively grown on their top facet, which acts as a nucleation site. By DE, we can successfully tailor the number density and diameter of the template of initial GaAs islands and the same degree of control is transferred to the final GaAs NWs. We show how, by a suitable choice of V/III flux ratio, a single NW can be accommodated on top of each GaAs base island. By transmission electron microscopy, as well as cathodo- and photoluminescence spectroscopy, we confirmed the high structural and optical quality of GaAs NWs grown by our method. We believe that this combined approach can be more generally applied to the fabrication of different homo- or heteroepitaxial NWs, nucleated on the top of predefined islands obtained by DE.

  11. SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    NASA Astrophysics Data System (ADS)

    Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

    2010-03-01

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

  12. Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy.

    PubMed

    Li, Lixia; Pan, Dong; Xue, Yongzhou; Wang, Xiaolei; Lin, Miaoling; Su, Dan; Zhang, Qinglin; Yu, Xuezhe; So, Hyok; Wei, Dahai; Sun, Baoquan; Tan, Pingheng; Pan, Anlian; Zhao, Jianhua

    2017-02-08

    Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1-xSbx nanowires by molecular-beam epitaxy. GaAs1-xSbx nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1-xSbx nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAs1-xSbx nanowires with x ranging from 0.60 to 0.93, we grow the GaAs1-xSbx nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAs1-xSbx nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAs0.07Sb0.93). High-resolution transmission electron microscopy images show that the grown GaAs1-xSbx nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAs1-xSbx nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAs1-xSbx nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAs1-xSbx nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.

  13. Order-N Electronic Structure Calculation of n-TYPE GaAs Quantum Dots

    NASA Astrophysics Data System (ADS)

    Nomura, S.; Iitaka, T.

    2008-10-01

    A linear scale method for calculating electronic properties of large and complex systems is introduced within a local density approximation. The method is based on the Chebyshev polynomial expansion and the time-dependent method, which is tested in calculating the electronic structure of a model n-type GaAs quantum dot.

  14. Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

    NASA Astrophysics Data System (ADS)

    Elsayed, M.; Krause-Rehberg, R.; Korff, B.; Ratschinski, I.; Leipner, H. S.

    2013-08-01

    Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450-850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 1016 - 1017 cm-3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is VGaVAs-2CuGa.

  15. Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

    NASA Astrophysics Data System (ADS)

    Fauzi, D. Ahmad; Rashid, N. K. A. Md; Karim, J. Abdul; Zin, M. R. Mohamed; Hasbullah, N. F.; Sheik Fareed, O. A.

    2013-12-01

    This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-voltage (C-V) measurements using Keithley 4200 SCS. Two different commercial optoelectronics diodes; GaN on SiC light emitting diode (LED) and GaAs infrared emitting diode (IRED) were radiated with neutron using pneumatic transfer system (PTS) in the PUSPATI TRIGA Mark II research reactor under total neutron flux of 1×1012 neutron/cm2.s. Following the neutron exposure for 1, 3 and 5 minutes, the I-V forward bias and reverse bias leakage current increase for GaAs IREDs, but minimal changes were observed in the GaN LEDs. The C-V measurements revealed that the capacitance and carrier concentration of GaAs IREDs decrease with increasing radiation flux.

  16. GaAs microwave devices and circuits with submicron electron-beam defined features

    NASA Technical Reports Server (NTRS)

    Wisseman, W. R.; Macksey, H. M.; Brehm, G. E.; Saunier, P.

    1983-01-01

    This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

  17. Second harmonic generation from patterned GaAs inside a subwavelength metallic hole array

    NASA Astrophysics Data System (ADS)

    Fan, Wenjun; Zhang, Shuang; Malloy, K. J.; Brueck, S. R. J.; Panoiu, N. C.; Osgood, R. M.

    2006-10-01

    By extending GaAs dielectric posts with a large second-order nonlinear susceptibility through the holes of a subwavelength metallic hole array coupled to the metal surface-plasma wave, strong second harmonic (SH) signal is observed. The SH signal is strengthened as a result of the enhanced electromagnetic fields inside the hole apertures.

  18. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    PubMed

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  19. Effects of surface passivation on twin-free GaAs nanosheets.

    PubMed

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

  20. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    NASA Astrophysics Data System (ADS)

    Brown, Evan; Sheng, Chunyang; Shimamura, Kohei; Shimojo, Fuyuki; Nakano, Aiichiro

    2015-02-01

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  1. On the cascade capture of electrons at donors in GaAs quantum wells

    SciTech Connect

    Aleshkin, V. Ya.

    2015-09-15

    The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

  2. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G.; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R.; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

    2017-03-01

    Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h‑1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

  3. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  4. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  5. GaAs Multiplexers for VLWIR Detector Readout Below 10 Kelvin

    NASA Technical Reports Server (NTRS)

    Cunningham, T.; Fitzsimmons, M. J.

    1997-01-01

    A multiplexer and buffer based on GaAs JFET technology is presented. This multiplexer operates normally from room temperature down to 4 Kelvin and is suitable for the readout of Very Long Wavelength Infrared Detectors that must be cooled to below 10 Kelvin.

  6. Cryogenic operation of GaAs based multiplier chains to 400 GHz

    NASA Technical Reports Server (NTRS)

    Maestrini, A.; Pukala, D.; Maiwald, F.; Schlecht, E.; Chattopadhyay, G.; Mehdi, I.

    2000-01-01

    The FIRST/HIFI mission allows for the local oscillator frequency multiplier chains to be cooled to 120 - 150 K in order to increase available output power. This paper will discuss the implication of cooling on GaAs based planar Schottky diode varactors for flight applications.

  7. Micro structuration of gaas surface by wet etching: towards a specific surface behavior.

    PubMed

    Bienaime, Alex; Elie-Caille, Celine; Leblois, Therese

    2012-08-01

    Resonant microelectromechanical systems are promising devices for real time and highly sensitive measurements. The sensitivity of such sensors to additional mass loadings which can be increased thanks to the miniaturisation of devices is of prime importance for biological applications. The miniaturisation of structures passes through a photolithographic process and wet chemical etching. So, this paper presents new results on the anisotropic chemical etching of the gallium arsenide (GaAs) crystal used for this application, in several solutions. This paper focuses on the micro/nanostructuration of the sensing surface to increase the sensor sensitivity. Indeed, this active surface will be biofunctionalized to operate in biological liquid media in view of biomolecules detection. Several experimental conditions of etching bath composition, concentration and temperature were examined to obtain a large variety of geometrical surfaces topographies and roughness. According to the orientation dependence of the chemical etching process, the experiments were also performed on various GaAs crystal plates. The bath 1 H3PO4:9 H2O2:1 H2O appeared to be particularly adapted to the fabrication of the GaAs microstructured membrane: indeed, the bath is highly stable, anisotropic, and, as a function of temperature, it allows the production of a large variety of GaAs surface topographies.

  8. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  9. Langley program of GaAs solar cells. [emphasizing energy conversion efficiency and radiation resistance

    NASA Technical Reports Server (NTRS)

    Conway, E. J.

    1979-01-01

    A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.

  10. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  11. Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions.

    PubMed

    Teran, Alan S; Moon, Eunseong; Lim, Wootaek; Kim, Gyouho; Lee, Inhee; Blaauw, David; Phillips, Jamie D

    2016-07-01

    GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm(2)) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally. Voltage is limited by generation-recombination dark current attributed to perimeter sidewall surface recombination based on the measurements of variable cell area. Bulk and perimeter recombination coefficients of 1.464 pA/mm(2) and 0.2816 pA/mm, respectively, were extracted from dark current measurements. Resulting power conversion efficiency is strongly dependent on cell area, where current GaAs of 1-mm(2) indoor photovoltaic cells demonstrates power conversion efficiency of approximately 19% at 580 lx of white LED illumination. Reductions in both bulk and perimeter sidewall recombination are required to increase maximum efficiency (while maintaining small cell area near 1 mm(2)) to approach the theoretical power conversion efficiency of 40% for GaAs cells under typical indoor lighting conditions.

  12. Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy.

    PubMed

    Prieto, Ivan; Kozak, Roksolana; Skibitzki, Oliver; Rossell, Marta D; Zaumseil, Peter; Capellini, Giovanni; Gini, Emilio; Kunze, Karsten; Rojas Dasilva, Yadira Arroyo; Erni, Rolf; Schroeder, Thomas; Känel, Hans von

    2017-03-01

    Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.

  13. A comparison of GaAs and Si hybrid solar power systems

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Roberts, A. S., Jr.

    1977-01-01

    Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

  14. Study on Nonlinear Absorption Effect of Nanosecond Pulse Laser Irradiation for GaAs.

    PubMed

    Sun, Wenjun; Liu, Zhongyang; Zhou, Haijiao

    2016-04-01

    In order to research nonlinear absorption effect of pulse laser irradiation for GaAs, a physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The thermal effects of semiconductor material GaAs was analyzed under irradiation of nanosecond pulse laser with wavelength of 1064 nm. The radial and transverse temperature distribution of semiconductor material GaAs was calculated under irradiation of nanosecond pulse laser with different power density by solving the thermal conduction equations. The contribution of one-photon absorption, two-photon absorption and free carrier absorption to temperature of GaAs material were discussed. The results show that when the pulse laser power density rises to 10(10) W/cm2, free carrier absorption played a leading role and it was more than that of one-photon absorption of material. The temperature contribution of two-photon absorption and free carrier absorption could be ignored at laser power density lower than 10(8) W/cm2. The result is basically consistent with relevant experiments, which shows that physical model constructed is valid.

  15. Complete set of deep traps in semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Pavlović, M.; Desnica, U. V.; Gladić, J.

    2000-10-01

    Reevaluation and recalculation of thermally stimulated current (TSC) data from semi-insulating (SI) GaAs, published by many different authors over a period of three decades were done by means of the new analytical method, simultaneous multiple peak analysis (SIMPA). The SIMPA procedure clearly resolved contributions from various overlapping TSC peaks and enabled the precise determination of signatures (activation energy, Ea and capture cross section, σ) of all observed deep traps. The analyzed TSC spectra refer to SI GaAs samples that have been grown/treated in quite different ways (various growth techniques, growth under As or Ga rich conditions, different annealing procedures, irradiation with neutrons, γ rays, etc.). Although the SIMPA procedure was applied to apparently quite different TSC spectra, in all cases excellent fits were achieved, with the unique set (or subset from it) of eleven different deep traps, the only difference being in relative and absolute concentrations of traps. Despite a broad variety of samples analyzed in this article, the set of deep traps obtained is the same as the one being previously seen in the narrow range of SI GaAs samples. This finding suggests that this set of traps is a finite and complete set of all defects with deep levels in SI GaAs. It was also concluded that these defects are primarily complexes containing simple native defects.

  16. The Creation of Multimedia Resources to Support the Gaelic Athletic Association (GAA) Coach Education Programme (CEP)

    ERIC Educational Resources Information Center

    Crotty, Yvonne; D'Arcy, Jimmy; Sweeney, David

    2016-01-01

    The Gaelic Athletic Association (GAA) is an Irish amateur sporting and cultural organisation. It represents in excess of 20,000 teams nationwide and is committed to supporting the development of players and coaches through its Coach Education Programme (CEP). A strategic goal of the CEP is to supplement the traditional field based coach education…

  17. Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions

    PubMed Central

    Teran, Alan S.; Moon, Eunseong; Lim, Wootaek; Kim, Gyouho; Lee, Inhee; Blaauw, David; Phillips, Jamie D.

    2016-01-01

    GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm2) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally. Voltage is limited by generation–recombination dark current attributed to perimeter sidewall surface recombination based on the measurements of variable cell area. Bulk and perimeter recombination coefficients of 1.464 pA/mm2 and 0.2816 pA/mm, respectively, were extracted from dark current measurements. Resulting power conversion efficiency is strongly dependent on cell area, where current GaAs of 1-mm2 indoor photovoltaic cells demonstrates power conversion efficiency of approximately 19% at 580 lx of white LED illumination. Reductions in both bulk and perimeter sidewall recombination are required to increase maximum efficiency (while maintaining small cell area near 1 mm2) to approach the theoretical power conversion efficiency of 40% for GaAs cells under typical indoor lighting conditions. PMID:28133394

  18. GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

    PubMed

    Ikejiri, Keitaro; Ishizaka, Fumiya; Tomioka, Katsuhiro; Fukui, Takashi

    2013-03-22

    The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evaluation of the grown shapes and growth characteristics revealed that GaAs NWs grown on a poly-Si substrate have the same growth mechanism as conventional GaAs NWs grown on a single-crystalline GaAs or Si substrate. Experiments showed that the wire structure yield can be improved by increasing the Si grain size and/or increasing the Si deposition temperature. The growth model proposed for understanding NW growth on poly-Si is based on the mask opening size, the Si grain size, and the growth conditions. The ability to control the growth mode is promising for the formation of NWs with complex structures on poly-Si thin layers.

  19. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  20. Structural studies of sulfur passivated GaAs(001) surfaces with LEED and AFM

    NASA Astrophysics Data System (ADS)

    Wang, Xuewen; Ke, Yenjin; Milano, Steve; Tao, Nongjian; Darici, Yesim

    1997-03-01

    We present the results of auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and atomic force microscopy (AFM) analysis of sulfur passivating layers on the GaAs(001) surface. The GaAs surfaces were passivated with both inorganic ((NH_4)_2S) and organic (ODT) S-based compounds. We prepared the inorganic sulfur-passivated GaAs(001) surfaces with a wet chemical treatment using (NH_4)_2S solution. This was followed by thermal annealing of the treated sample in ultra high vacuum. After ex-situ and in-situ treatments the surface resulted in a (2X1) LEED pattern. The LEED data (I-V curves) was recorded and compared with dynamical LEED calculations for different structural models for the sulfur passivated GaAs(110) surface. The results showed that sulfur passivated (2X1) surface structure is an arsenic-sulfur dimer on gallium terminated substrate. The ex-situ AFM results also showed a (2X1) structure for the inorganic passivation and a very smooth surface for the organic ODT in ethanal treated sample.