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Sample records for acid alpha-glucosidase gaa

  1. Cloning the mouse homologue of the human lysosomal acid {alpha}-glucosidase gene

    SciTech Connect

    Ding, J.H.; Yang, B.Z.; Liu, H.M.

    1994-09-01

    Pompe disease (GSD II) is an autosomal recessive disorder caused by a deficiency of lysosomal acid {alpha}-glucosidase (GAA). In an attempt to create a mouse model for Pompe disease, we isolated and characterized the gene encoding the mouse homologue of the human GAA. Twenty clones that extend from exon 2 to the poly(A) tail were isolated from a mouse liver cDNA library, but the remainder of the mRNA proved difficult to obtain by conventional cDNA library screening. Sequences spanning exons 1-2 were cloned by RACE from mouse liver RNA. The full-length liver GAA cDNA contains 3365 nucleotides with a coding region of 2859 nucleotides and a 394 base pair 3{prime}-nontranslated region. The deduced amino acid sequence of the mouse GAA shows 84% identity to the human GAA. Southern blot analysis demonstrated that the mouse GAA was encoded by a single copy gene. Then six bacteriophages containing DNA from the GAA gene were isolated by screening 10{sup 6} phage plaques of a mouse 129 genomic library using a mouse GAA cDNA as a probe. From one of these bacteriophages, an 11-kilobase EcoRI fragment containing exons 3 to 15 was subcloned and sequenced. Work is in progress using this genomic clone to disrupt the GAA gene in murine embryonic stem cells in order to create GSD II mice.

  2. Enhanced efficacy of an AAV vector encoding chimeric, highly secreted acid alpha-glucosidase in glycogen storage disease type II.

    PubMed

    Sun, Baodong; Zhang, Haoyue; Benjamin, Daniel K; Brown, Talmage; Bird, Andrew; Young, Sarah P; McVie-Wylie, Alison; Chen, Y-T; Koeberl, Dwight D

    2006-12-01

    Glycogen storage disease type II (GSD-II; Pompe disease; MIM 232300) is an inherited muscular dystrophy caused by deficiency in the activity of the lysosomal enzyme acid alpha-glucosidase (GAA). We hypothesized that chimeric GAA containing an alternative signal peptide could increase the secretion of GAA from transduced cells and enhance the receptor-mediated uptake of GAA in striated muscle. The relative secretion of chimeric GAA from transfected 293 cells increased up to 26-fold. Receptor-mediated uptake of secreted, chimeric GAA corrected cultured GSD-II patient cells. High-level hGAA was sustained in the plasma of GSD-II mice for 24 weeks following administration of an AAV2/8 vector encoding chimeric GAA; furthermore, GAA activity was increased and glycogen content was significantly reduced in striated muscle and in the brain. Administration of only 1 x 10(10) vector particles increased GAA activity in the heart and diaphragm for >18 weeks, whereas 3 x 10(10) vector particles increased GAA activity and reduced glycogen content in the heart, diaphragm, and quadriceps. Furthermore, an AAV2/2 vector encoding chimeric GAA produced secreted hGAA for >12 weeks in the majority of treated GSD-II mice. Thus, chimeric, highly secreted GAA enhanced the efficacy of AAV vector-mediated gene therapy in GSD-II mice. PMID:16987711

  3. Characterization of the molecular defect in infantile and adult acid alpha-glucosidase deficiency fibroblasts.

    PubMed Central

    Beratis, N G; LaBadie, G U; Hirschhorn, K

    1978-01-01

    Different clinical expressions of acid alpha-glucosidase deficiency have been described. The present study was undertaken to investigate the basic metabolic defect in the infantile and adult forms of the disease. Acid alpha-glucosidase (EC 3.2.1.20) was purified from normal and from adult acid alpha-glucosidase deficiency fibroblasts. The pH optimum; Michaelis constant; electrophoretic mobility in starch; thermal denaturation at pH 4.0 and 7.0; and inhibition by turanose, alpha-methylglucoside and trehalose were the same in purified enzyme from normal and mutant cells. Placental acid alpha-glucosidase was purified to, or near, homogeneity. Monospecific antibodies raised against the enzyme in each of three enzyme peaks obtained from the last purification step were found to cross-react with the enzyme of all three peaks, and with purified, normal fibroblast enzyme. Cross-reacting material (CRM) also was identified in fibroblast lysates from normal subjects and from both forms of acid alpha-glucosidase deficiency. The amount of CRM in the adult form appeared to be significantly less than in normal cells or cells from the infantile form. Enzyme activity was demonstrated in the immune complexes of the normal and adult acid alpha-glucosidase deficiency fibroblasts, but not of the infantile form. Competition for antibody binding sites was observed between normal and both types of mutant enzymes. The findings indicate that this case of infantile acid alpha-glucosidase deficiency is the result of a structural gene mutation which causes the synthesis of a catalytically inactive (CRM-positive) enzyme protein. It appears that in the adult form, the mutation causes a reduction in the amount of the enzyme protein present in the cells. Images PMID:34626

  4. Oral delivery of Acid Alpha Glucosidase epitopes expressed in plant chloroplasts suppresses antibody formation in treatment of Pompe mice

    PubMed Central

    Su, Jin; Sherman, Alexandra; Doerfler, Phillip A.; Byrne, Barry J.; Herzog, Roland W.; Daniell, Henry

    2015-01-01

    Summary Deficiency of acid alpha glucosidase (GAA) causes Pompe disease in which the patients systemically accumulate lysosomal glycogen in muscles and nervous systems, often resulting in infant mortality. Although enzyme replacement therapy (ERT) is effective in treating patients with Pompe disease, formation of antibodies against rhGAA complicates treatment. In this report, we investigated induction of tolerance by oral administration of GAA expressed in chloroplasts. Because full-length GAA could not be expressed, N-terminal 410-amino acids of GAA (as determined by T-cell epitope mapping) were fused with the transmucosal carrier CTB. Tobacco transplastomic lines expressing CTB-GAA were generated through site-specific integration of transgenes into the chloroplast genome. Homoplasmic lines were confirmed by Southern blot analysis. Despite low-level expression of CTB-GAA in chloroplasts, yellow or albino phenotype of transplastomic lines was observed due to binding of GAA to a chloroplast protein that has homology to mannose-6 phosphate receptor. Oral administration of the plant-made CTB-GAA fusion protein even at 330-fold lower dose (1.5 μg) significantly suppressed immunoglobulin formation against GAA in Pompe mice injected with 500 μg rhGAA per dose, with several-fold lower titre of GAA-specific IgG1 and IgG2a. Lyophilization increased CTB-GAA concentration by 30-fold (up to 190 μg per g of freeze-dried leaf material), facilitating long-term storage at room temperature and higher dosage in future investigations. This study provides the first evidence that oral delivery of plant cells is effective in reducing antibody responses in ERT for lysosomal storage disorders facilitating further advances in clinical investigations using plant cell culture system or in vitro propagation. PMID:26053072

  5. Carbohydrate content of acid alpha-glucosidase (gamma-amylase) from human liver.

    PubMed

    Belen'ky, D M; Mikhajlov, V I; Rosenfeld, E L

    1979-05-01

    The presence of carbohydrates in homogeneous preparations of human liver acid alpha-glucosidase has been established and the carbohydrate content of the enzyme determined. The enzyme was purified with the specific purpose of removing all low-molecular-weight carbohydrates. It was specifically adsorbed on Concanavalin A-Sepharose, eluted with methyl-alpha-D-mannopyranoside and gave a positive reaction with the phenol-sulphuric acid reagent. These facts taken together provide evidence that the enzyme studied is a glycoprotein. The analysis of the carbohydrate content of human liver acid alpha-glucosidase showed that there were 8.3 glucosamine, 13.2 mannose and possibly 3--4 glucose residues per molecule of the enzyme with a molecular weight of 98,000. PMID:376187

  6. Affinity chromatography of yeast alpha-glucosidase using ligand-mediated chromatography on immobilized phenylboronic acids.

    PubMed Central

    Myöhänen, T A; Bouriotis, V; Dean, P D

    1981-01-01

    The synthesis of 3-nitro-4-(6-aminohexylamido)phenylboronic acid is described. The properties of two novel forms of immobilized phenylboronate agarose adsorbents [m-aminophenylboronic acid-Matrex Gel and 3-nitro-4-(6-aminohexylamido)phenylboronic acid-Sepharose CL-6B] were investigated. Both gels bind and selectively retard the glycoprotein alpha-glucosidase from yeast. The retardation is affected by following parameters: (i) pH, (ii) presence of sugar, (iii) concentration of sugar and (iv) buffer species (especially triethanolamine). Five sugars were studied, namely sorbitol, fructose, ribose, glucose and maltose. The concentration of sugar required to produce significant retardation increased in the above order, whereas the ability of sugar to form a complex with boron decreases in the same order. These effects were observed with crude as well as pure enzyme. Since alpha-glucosidase is a glycoprotein, it is proposed that this protein is mainly bound to these immobilized phenylboronates via sugar (glyco) residues. Displacement of the enzyme from the column is effected by the sugar in the buffer (or in a preincubation mixture). However, the marked pH-dependence (this retardation effect could only be observed at pH 7.4) suggests that these results are not due solely to hydrophobic or ionic mechanisms and are more complex than simple sugar-phenylboronic acid interactions. PMID:7034722

  7. Evasion of immune responses to introduced human acid alpha-glucosidase by liver-restricted expression in glycogen storage disease type II.

    PubMed

    Franco, Luis M; Sun, Baodong; Yang, Xiaoyi; Bird, Andrew; Zhang, Haoyue; Schneider, Ayn; Brown, Talmage; Young, Sarah P; Clay, Timothy M; Amalfitano, Andrea; Chen, Y T; Koeberl, Dwight D

    2005-11-01

    Glycogen storage disease type II (GSD-II; Pompe disease) is caused by a deficiency of acid alpha-glucosidase (GAA; acid maltase) and manifests as muscle weakness, hypertrophic cardiomyopathy, and respiratory failure. Adeno-associated virus vectors containing either a liver-specific promoter (LSP) (AAV-LSPhGAApA) or a hybrid CB promoter (AAV-CBhGAApA) to drive human GAA expression were pseudotyped as AAV8 and administered to immunocompetent GAA-knockout mice. Secreted hGAA was detectable in plasma between 1 day and 12 weeks postadministration with AAV-LSPhGAApA and only from 1 to 8 days postadministration for AAV-CBGAApA. No anti-GAA antibodies were detected in response to AAV-LSPhGAApA (<1:200), whereas AAV-CBhGAApA provoked an escalating antibody response starting 2 weeks postadministration. The LSP drove approximately 60-fold higher GAA expression than the CB promoter in the liver by 12 weeks following vector administration. Furthermore, the detected cellular immunity was provoked by AAV-CBhGAApA, as detected by ELISpot and CD4+/CD8+ lymphocyte immunodetection. GAA activity was increased to higher than normal and glycogen content was reduced to essentially normal levels in the heart and skeletal muscle following administration of AAV-LSPhGAApA. Therefore, liver-restricted GAA expression with an AAV vector evaded immunity and enhanced efficacy in GSD-II mice. PMID:16005263

  8. A New alpha-Glucosidase Inhibitor, 10-Hydroxy-8(E)-Octadecenoic Acid

    Technology Transfer Automated Retrieval System (TEKTRAN)

    In our continuous effort to screen natural products for their anti-microbial and enzyme inhibitor activities, we found that 10-Hydroxy-8(E)-Octadecenoic acid (HOD) exhibited strong anti- a-glucosidase (EC 3.2.1.20) activity. HOD is an intermediate in the bioconversion of oleic acid to 7,10-dihydrox...

  9. Alpha glucosidase inhibitors.

    PubMed

    Kalra, Sanjay

    2014-04-01

    Alpha glucosidase inhibitors (AGIs) are a unique class of anti-diabetic drugs. Derived from bacteria, these oral drugs are enzyme inhibitors which do not have a pancreato -centred mechanism of action. Working to delay carbohydrate absorption in the gastrointestinal tract, they control postprandial hyperglycaemia and provide unquestioned cardiovascular benefit. Specially suited for a traditional Pakistani carbohydrate-rich diet, AGIs have been termed the 'untapped diamonds' of diabetology. The use of these oral antidiabetic drugs (OADs) that target pathophysiology in the early stages of type 2 diabetes, notably to reduce postprandial hyperglycaemia and hyperinsulinaemia will inevitably increase with time. This review describes the history of their development, mechanism of action, basic and clinical pharmacology, and suggests practical, evidence-based guidance for their optimal use. PMID:24864650

  10. Antidiabetic medicinal plants as a source of alpha glucosidase inhibitors.

    PubMed

    Benalla, Wafaa; Bellahcen, Saïd; Bnouham, Mohamed

    2010-07-01

    The aim of this study is to collate all available data on antidiabetic plants that inhibit alpha glucosidase, reported mainly by Medline (PubMed) these last years. In the present study, interest is focused on experimental researches conducted on hypoglycemic plants particularly those which show alpha glucosidase inhibitor activity alongside bioactive components. This study describes 47 species that belong to 29 families. The plant families, which enclose the species, studied most as inhibitors of alphaglucosidase, are Fabaceae (6 species.), Crassulaceae (3 species), Hippocrateacaea (3 species), Lamiaceae (3 species), and Myrtaceae (3 species), with most studied species being Salacia reticulata (Hippocrateaceae) and Morus alba (Moraceae). The study also covers natural products (active natural components and crude extracts) isolated from the medicinal plants which inhibit alpha glucosidase as reported this last decade. Many kinds of these isolated natural products show strong activity such as, Alkaloids, stilbenoids (polyphenol), triterpene, acids (chlorogenic acid, betulinic acid, syringic acid, vanillic acid, bartogenic acid, oleanolic acid, dehydrotrametenolic acid, corosolic acid, ellagic acid, ursolic acid, gallic acid), phytosterol, myoinositol, flavonoids, Flavonolignans, anthraquinones, anthrones, and xanthones, Feruloylglucosides, flavanone glucosides, acetophenone glucosides, glucopyranoside derivatives, genine derivatives, flavonol, anthocyanin and others. PMID:20522017

  11. Peptide modulators of alpha-glucosidase

    PubMed Central

    Roskar, Irena; Molek, Peter; Vodnik, Miha; Stempelj, Mateja; Strukelj, Borut; Lunder, Mojca

    2015-01-01

    Aims/Introduction Acute glucose fluctuations during the postprandial period pose great risk for cardiovascular complications and thus represent an important therapeutic approach in type 2 diabetes. In the present study, screening of peptide libraries was used to select peptides with an affinity towards mammalian intestinal alpha-glucosidase as potential leads in antidiabetic agent development. Materials and Methods Three phage-displayed peptide libraries were used in independent selections with different elution strategies to isolate target-binding peptides. Selected peptides displayed on phage were tested to compete for an enzyme-binding site with known competitive inhibitors, acarbose and voglibose. The four best performing peptides were synthesized. Their binding to the mammalian alpha-glucosidase and their effect on enzyme activity were evaluated. Results Two linear and two cyclic heptapeptides with high affinity towards intestinal alpha-glucosidase were selected. Phage-displayed as well as synthetic peptides bind into or to the vicinity of the active site on the enzyme. Both cyclic peptides inhibited enzyme activity, whereas both linear peptides increased enzyme activity. Conclusions Although natural substrates of glycosidase are polysaccharides, in the present study we successfully isolated novel peptide modulators of alpha-glucosidase. Modulatory activity of selected peptides could be further optimized through peptidomimetic design. They represent promising leads for development of efficient alpha-glucosidase inhibitors. PMID:26543535

  12. alpha-Glucosidase inhibitors from Commelina communis.

    PubMed

    Kim, H S; Kim, Y H; Hong, Y S; Paek, N S; Lee, H S; Kim, T H; Kim, K W; Lee, J J

    1999-06-01

    A methanolic extract of Commelina communis showed potent inhibitory activity against alpha-glucosidase. One pyrrolidine alkaloid, 2,5-dihydroxymethyl-3,4-dihydroxypyrrolidine (DMDP, 1) and four piperidine alkaloids, 1-deoxymannojirimycin (2), 1-deoxynojirimycin (3), alpha-homonojirimycin (4) and 7-O-beta-D-glucopyranosyl alpha-homonojirimycin (5) were isolated by bioassay-directed fractionation and separation. These compounds have been identified for the first time from Commelina communis, supporting the pharmacological basis of this plant that has been used as a traditional herbal medicine for the treatment of diabetes. PMID:10418330

  13. The Pharmacological Chaperone AT2220 Increases the Specific Activity and Lysosomal Delivery of Mutant Acid Alpha-Glucosidase, and Promotes Glycogen Reduction in a Transgenic Mouse Model of Pompe Disease

    PubMed Central

    Lun, Yi; Soska, Rebecca; Feng, Jessie; Dhulipala, Rohini; Frascella, Michelle; Garcia, Anadina; Pellegrino, Lee J.; Xu, Su; Brignol, Nastry; Toth, Matthew J.; Do, Hung V.; Lockhart, David J.; Wustman, Brandon A.; Valenzano, Kenneth J.

    2014-01-01

    Pompe disease is an inherited lysosomal storage disorder that results from a deficiency in acid α-glucosidase (GAA) activity due to mutations in the GAA gene. Pompe disease is characterized by accumulation of lysosomal glycogen primarily in heart and skeletal muscles, which leads to progressive muscle weakness. We have shown previously that the small molecule pharmacological chaperone AT2220 (1-deoxynojirimycin hydrochloride, duvoglustat hydrochloride) binds and stabilizes wild-type as well as multiple mutant forms of GAA, and can lead to higher cellular levels of GAA. In this study, we examined the effect of AT2220 on mutant GAA, in vitro and in vivo, with a primary focus on the endoplasmic reticulum (ER)-retained P545L mutant form of human GAA (P545L GAA). AT2220 increased the specific activity of P545L GAA toward both natural (glycogen) and artificial substrates in vitro. Incubation with AT2220 also increased the ER export, lysosomal delivery, proteolytic processing, and stability of P545L GAA. In a new transgenic mouse model of Pompe disease that expresses human P545L on a Gaa knockout background (Tg/KO) and is characterized by reduced GAA activity and elevated glycogen levels in disease-relevant tissues, daily oral administration of AT2220 for 4 weeks resulted in significant and dose-dependent increases in mature lysosomal GAA isoforms and GAA activity in heart and skeletal muscles. Importantly, oral administration of AT2220 also resulted in significant glycogen reduction in disease-relevant tissues. Compared to daily administration, less-frequent AT2220 administration, including repeated cycles of 4 or 5 days with AT2220 followed by 3 or 2 days without drug, respectively, resulted in even greater glycogen reductions. Collectively, these data indicate that AT2220 increases the specific activity, trafficking, and lysosomal stability of P545L GAA, leads to increased levels of mature GAA in lysosomes, and promotes glycogen reduction in situ. As such, AT2220 may

  14. Antidiabetic Property of Symplocos cochinchinensis Is Mediated by Inhibition of Alpha Glucosidase and Enhanced Insulin Sensitivity

    PubMed Central

    Antu, Kalathookunnel Antony; Riya, Mariam Philip; Mishra, Arvind; Anilkumar, Karunakaran S.; Chandrakanth, Chandrasekharan K.; Tamrakar, Akhilesh K.; Srivastava, Arvind K.; Raghu, K. Gopalan

    2014-01-01

    The study is designed to find out the biochemical basis of antidiabetic property of Symplocos cochinchinensis (SC), the main ingredient of ‘Nisakathakadi’ an Ayurvedic decoction for diabetes. Since diabetes is a multifactorial disease, ethanolic extract of the bark (SCE) and its fractions (hexane, dichloromethane, ethyl acetate and 90% ethanol) were evaluated by in vitro methods against multiple targets relevant to diabetes such as the alpha glucosidase inhibition, glucose uptake, adipogenic potential, oxidative stress, pancreatic beta cell proliferation, inhibition of protein glycation, protein tyrosine phosphatase-1B (PTP-1B) and dipeptidyl peptidase-IV (DPP-IV). Among the extracts, SCE exhibited comparatively better activity like alpha glucosidase inhibition (IC50 value-82.07±2.10 µg/mL), insulin dependent glucose uptake (3 fold increase) in L6 myotubes, pancreatic beta cell regeneration in RIN-m5F (3.5 fold increase) and reduced triglyceride accumulation (22% decrease) in 3T3L1 cells, protection from hyperglycemia induced generation of reactive oxygen species in HepG2 cells (59.57% decrease) with moderate antiglycation and PTP-1B inhibition. Chemical characterization by HPLC revealed the superiority of SCE over other extracts due to presence and quantity of bioactives (beta-sitosterol, phloretin 2′glucoside, oleanolic acid) in addition to minerals like magnesium, calcium, potassium, sodium, zinc and manganese. So SCE has been subjected to oral sucrose tolerance test to evaluate its antihyperglycemic property in mild diabetic and diabetic animal models. SCE showed significant antihyperglycemic activity in in vivo diabetic models. We conclude that SC mediates the antidiabetic activity mainly via alpha glucosidase inhibition, improved insulin sensitivity, with moderate antiglycation and antioxidant activity. PMID:25184241

  15. Phase I/II Trial of Adeno-Associated Virus–Mediated Alpha-Glucosidase Gene Therapy to the Diaphragm for Chronic Respiratory Failure in Pompe Disease: Initial Safety and Ventilatory Outcomes

    PubMed Central

    Smith, Barbara K.; Collins, Shelley W.; Conlon, Thomas J.; Mah, Cathryn S.; Lawson, Lee Ann; Martin, Anatole D.; Fuller, David D.; Cleaver, Brian D.; Clément, Nathalie; Phillips, Dawn; Islam, Saleem; Dobjia, Nicole

    2013-01-01

    Abstract Pompe disease is an inherited neuromuscular disease caused by deficiency of lysosomal acid alpha-glucosidase (GAA) leading to glycogen accumulation in muscle and motoneurons. Cardiopulmonary failure in infancy leads to early mortality, and GAA enzyme replacement therapy (ERT) results in improved survival, reduction of cardiac hypertrophy, and developmental gains. However, many children have progressive ventilatory insufficiency and need additional support. Preclinical work shows that gene transfer restores phrenic neural activity and corrects ventilatory deficits. Here we present 180-day safety and ventilatory outcomes for five ventilator-dependent children in a phase I/II clinical trial of AAV-mediated GAA gene therapy (rAAV1-hGAA) following intradiaphragmatic delivery. We assessed whether rAAV1-hGAA results in acceptable safety outcomes and detectable functional changes, using general safety measures, immunological studies, and pulmonary functional testing. All subjects required chronic, full-time mechanical ventilation because of respiratory failure that was unresponsive to both ERT and preoperative muscle-conditioning exercises. After receiving a dose of either 1×1012 vg (n=3) or 5×1012 vg (n=2) of rAAV1-hGAA, the subjects' unassisted tidal volume was significantly larger (median [interquartile range] 28.8% increase [15.2–35.2], p<0.05). Further, most patients tolerated appreciably longer periods of unassisted breathing (425% increase [103–851], p=0.08). Gene transfer did not improve maximal inspiratory pressure. Expected levels of circulating antibodies and no T-cell-mediated immune responses to the vector (capsids) were observed. One subject demonstrated a slight increase in anti-GAA antibody that was not considered clinically significant. These results indicate that rAAV1-hGAA was safe and may lead to modest improvements in volitional ventilatory performance measures. Evaluation of the next five patients will determine whether earlier

  16. Steric course of the hydration of D-gluco-octenitol catalyzed by a. cap alpha. -glucosidases and by trehalase

    SciTech Connect

    Weiser, W.; Lehmann, J.; Chiba, S.; Matsui, H.; Brewer, C.F.; Hehre, E.J.

    1988-04-05

    Crystalline Aspergillus niger ..cap alpha..-glucosidase and highly purified preparations of rice ..cap alpha..-glucosidase II and Trichoderma reesei trehalase were found to catalyze the hydration of (2-/sup 2/H)-D-gluco-octenitol, i.e., (Z)-3,7-anhydrol-1,2-dideoxy-(2-/sup 2/H)-D-gluco-oct-2-enitol, to yield 1,2-dideoxy-(2-/sup 2/H)-D-gluco-octulose. In each case, the stereochemistry of the reaction was elucidated by examining the newly formed centers of asymmetry at C-2 and C-3 of the hydration product. The C-1 to C-3 fragment of each isolated (2-/sup 2/H)-D-gluco-octulose product was recovered as (2-/sup 2/H) propionic acid and identified by its positive optical rotatory dispersion as the S isomer, showing that each enzyme had protonated the octenitol (at C-2) from above its re face. /sup 1/H NMR spectra of enzyme/D-gluco-octenitol digests in D/sub 2/O showed that the ..cap alpha..-anomer of (2-/sup 2/H)-D-gluco-octulose was exclusively produced by each ..cap alpha..-glucosidase, whereas the ..beta..-anomer was formed by action of the trehalase. The trans hydration catalyzed by the ..cap alpha..-glucosidases was found to be very strongly inhibited by the substrate; the cis hydration reaction catalyzed by the trehalase showed no such inhibition. Special importance is attached to the finding that in hydrating octenitol each enzyme creates a product of the same anomeric form as in hydrolyzing an ..cap alpha..-D-glucosidic substrate. This result adds substantially to the growing evidence that individual glycosylases create the configuration of their reaction products by a means that is independent of donor substrate configuration, that is, by a means other than retaining or inverting substrate configuration.

  17. ALPHA-GLUCOSIDASES FROM THE GLYCOSIDE HYDROLASE FAMILY 31 IN GERMINATING SEEDS AND SEEDLING LEAVES OF BARLEY

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Of the four starch degrading enzymes in plants, only alpha-amylase and alpha-glucosidase have been extensively studied. Both alpha-amylase and alpha-glucosidase are important in germinating seeds in direct initiation of attack on starch grains. Five different alpha-glucosidases have been found in ...

  18. Terpenoids with alpha-glucosidase inhibitory activity from the submerged culture of Inonotus obliquus.

    PubMed

    Ying, You-Min; Zhang, Lin-Yan; Zhang, Xia; Bai, Hai-Bo; Liang, Dong-E; Ma, Lie-Feng; Shan, Wei-Guang; Zhan, Zha-Jun

    2014-12-01

    Lanostane-type triterpenoids, inotolactones A and B, a drimane-type sesquiterpenoid, inotolactone C, and five known terpenoids 6β-hydroxy-trans-dihydroconfertifolin, inotodiol, 3β,22-dihydroxyanosta-7,9(11),24-triene, 3β-hydroxycinnamolide, and 17-hydroxy-ent-atisan-19-oic acid, were isolated from the submerged culture of chaga mushroom, Inonotus obliquus. Their structures were characterized by spectroscopic methods, including MS and NMR (1D and 2D) spectroscopic techniques. Inotolactones A and B, examples of lanostane-type triterpenoids bearing α,β-dimethyl, α,β-unsaturated δ-lactone side chains, exhibited more potent alpha-glucosidase inhibitory activities than the positive control acarbose. This finding might be related to the anti-hyperglycemic properties of the fungus and to its popular role as a diabetes treatment. In addition, a drimane-type sesquiterpenoid and an atisane-type diterpenoid were isolated from I. obliquus. PMID:25446238

  19. Isomaltose formed by alpha-glucosidases triggers amylase induction in Aspergillus nidulans.

    PubMed

    Kato, Naoki; Murakoshi, Yuriko; Kato, Masashi; Kobayashi, Tetsuo; Tsukagoshi, Norihiro

    2002-10-01

    Among various alpha-glucobioses examined, isomaltose was the most effective inducer for amylase synthesis in Aspergillus nidulans. Amylase induction by maltose was completely inhibited by addition of castanospermine or cycloheximide, while induction by isomaltose was not affected by the inhibitors, suggesting that amylase induction by maltose requires inducible alpha-glucosidases. Disruption of the alpha-glucosidase A gene ( agdA), the alpha-glucosidase B gene ( agdB), or both genes did not abolish maltose-dependent induction, although amylase production induced by maltose decreased about 2-fold in the agdA/ agdB double disruptant, compared with that in the agdB disruptant at all concentrations tested. Upon induction by isomaltose, amylase synthesis was enhanced considerably in the agdB and agdA/ agdB disruptants. Even at 3 nM, isomaltose induced amylase production in the double disruptant, supporting the suggestion that isomaltose is a physiological inducer for amylase. Therefore, maltose must be converted to isomaltose by alpha-glucosidases prior to triggering amylase synthesis, but no specific alpha-glucosidase is required for amylase induction by maltose. Probably any alpha-glucosidases having isomaltose-forming activity, including AgdA and AgdB, may participate in amylase induction by maltose. PMID:12420145

  20. alpha-Glucosidase inhibitory activity of the methanolic extract from Tournefortia hartwegiana: an anti-hyperglycemic agent.

    PubMed

    Ortiz-Andrade, R R; García-Jiménez, S; Castillo-España, P; Ramírez-Avila, G; Villalobos-Molina, R; Estrada-Soto, S

    2007-01-01

    Tournefortia hartwegiana is a Mexican medicinal plant that is used for the treatment of diabetes, diarrhea and kidney pain. In a previous investigation, the methanolic extract of Tournefortia hartwegiana (METh) showed significant hypoglycemic and anti-diabetic properties on normoglycemic and alloxanized rats. In this context, the purpose of the present study was to establish one of the possible modes of action of METh to induce anti-diabetic activity. METh (310mg/kg) effect on alpha-glucosidase activity was investigated. METh intragastric administration was conducted to determine oral glucose tolerance test (OGTT), using different substrates: glucose, sucrose and maltose. The increase in plasma glucose level was significantly suppressed (P<0.05) by the extract after substrates administration. On the other hand, METh inhibited alpha-glucosidase activity in vitro, in a concentration-dependent manner (IC(50) of 3.16mg/mL). These results suggest that METh might exert its anti-diabetic effect by suppressing carbohydrate absorption from intestine, and thereby reducing the post-prandial increase of blood glucose. On the other hand, the bio-guided fractionation of this extract led to the isolation of: beta-sitosterol (1), stigmasterol (2), lupeol (3), ursolic acid (4), oleanolic acid (5), saccharose (6) and myo-inositol (7), using various chromatographic techniques. PMID:16920301

  1. Nucleotide sequence and expression of alpha-glucosidase-encoding gene (agdA) from Aspergillus oryzae.

    PubMed

    Minetoki, T; Gomi, K; Kitamoto, K; Kumagai, C; Tamura, G

    1995-08-01

    We have isolated an alpha-glucosidase(AGL)-encoding gene (agdA) from Aspergillus oryzae by heterologous hybridization using the corresponding Aspergillus niger gene as a probe. Southern hybridization analysis showed that the agdA gene is on a 5.0-kb ScaI fragment and there is a single copy in the A. oryzae chromosome. Comparison with the A. niger agdA gene indicated that the agdA gene contains three putative introns from 52 to 59 nucleotides long, and that it encodes 985 amino acid residues. The deduced amino acid sequence of A. oryzae AGL is 78% homologous with the A. niger AGL. The high degree of homology with the amino acid sequence bordering the putative catalytic residue of a number of AGL enzymes, and this enzyme suggests that Asp492 is a catalytic residue of A. oryzae AGL. The cloned gene was functional. Transformants of A. oryzae containing multiple copies of the cloned agdA gene showed a 6-16 fold increase in AGL activity. Like the Taka-amylase A and glucoamylase genes of A. oryzae, expression of the agdA gene was induced when maltose was provided as a carbon source, but expression was not induced by glucose. This result suggested that cis-element(s) involved in maltose induction may be also present in the agdA promoter region. PMID:7549103

  2. Unexpected high digestion rate of cooked starch by the Ct-Maltase-Glucoamylase small intestine mucosal alpha-glucosidase subunit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    For starch digestion to glucose, two luminal alpha-amylases and four gut mucosal alpha-glucosidase subunits are employed. The aim of this research was to investigate, for the first time, direct digestion capability of individual mucosal alpha-glucosidases on cooked (gelatinized) starch. Gelatinized ...

  3. Potential antiradical and alpha-glucosidase inhibitors from Ecklonia maxima (Osbeck) Papenfuss.

    PubMed

    Rengasamy, Kannan R R; Aderogba, Mutalib A; Amoo, Stephen O; Stirk, Wendy A; Van Staden, Johannes

    2013-11-15

    Alpha-glucosidase inhibitors play a potential role in the treatment of type 2 diabetes by delaying glucose absorption in the small intestine. Ecklonia maxima, a brown alga which grows abundantly on the west coast of South Africa, is used to produce alginate, animal feed, nutritional supplements and fertilizer. The crude aqueous methanol extract, four solvent fractions and three phlorotannins: 1,3,5-trihydroxybenezene (phloroglucinol) (1), dibenzo [1,4] dioxine-2,4,7,9-tetraol (2) and hexahydroxyphenoxydibenzo [1,4] dioxine (eckol) (3) isolated from E. maxima were evaluated for antiradical and alpha-glucosidase inhibitory activities. All the phlorotannins tested had strong antioxidant activities on DPPH free radicals with EC50 values ranging from 0.008 to 0.128μM. Compounds 2 and 3 demonstrated stronger antioxidant activity and an alpha-glucosidase inhibitory property than positive controls. These results suggest that E. maxima could be a natural source of potent antioxidants and alpha-glucosidase inhibitors. This study could facilitate effective utilization of E. maxima as an oral antidiabetic drug or functional food ingredient with a promising role in the formulation of medicines and nutrition supplements. PMID:23790932

  4. Different polyphenolic components of soft fruits inhibit alpha-amylase and alpha-glucosidase.

    PubMed

    McDougall, Gordon J; Shpiro, Faina; Dobson, Patricia; Smith, Pauline; Blake, Alison; Stewart, Derek

    2005-04-01

    Polyphenol-rich extracts from soft fruits were tested for their ability to inhibit alpha-amylase and alpha-glucosidase. All extracts tested caused some inhibition of alpha-amylase, but there was a 10-fold difference between the least and most effective extracts. Strawberry and raspberry extracts were more effective alpha-amylase inhibitors than blueberry, blackcurrant, or red cabbage. Conversely, alpha-glucosidase was more readily inhibited by blueberry and blackcurrant extracts. The extent of inhibition of alpha-glucosidase was related to their anthocyanin content. For example, blueberry and blackcurrant extracts, which have the highest anthocyanin content, were the most effective inhibitors of alpha-glucosidase. The extracts most effective in inhibiting alpha-amylase (strawberry and raspberry) contain appreciable amounts of soluble tannins. Other tannin-rich extracts (red grape, red wine, and green tea) were also effective inhibitors of alpha-amylase. Indeed, removing tannins from strawberry extracts with gelatin also removed inhibition. Fractionation of raspberry extracts on Sephadex LH-20 produced an unbound fraction enriched in anthocyanins and a bound fraction enriched in tannin-like polyphenols. The unbound anthocyanin-enriched fraction was more effective against alpha-glucosidase than the original extract, whereas the alpha-amylase inhibitors were concentrated in the bound fraction. The LH-20 bound sample was separated by preparative HPLC, and fractions were assayed for inhibition of alpha-amylase. The inhibitory components were identified as ellagitannins using LC-MS-MS. This study suggests that different polyphenolic components of fruits may influence different steps in starch digestion in a synergistic manner. PMID:15796622

  5. A second independent resistance mechanism to Bacillus sphaericus binary toxin targets its alpha-glucosidase receptor in Culex quinquefasciatus.

    PubMed

    Romão, Tatiany Patrícia; de Melo Chalegre, Karlos Diogo; Key, Shana; Ayres, Constância Flávia Junqueira; Fontes de Oliveira, Cláudia Maria; de-Melo-Neto, Osvaldo Pompílio; Silva-Filha, Maria Helena Neves Lobo

    2006-04-01

    The entomopathogen Bacillus sphaericus is an important tool for the vector control of Culex sp., and its effectiveness has been validated in field trials. The appearance of resistance to this bacterium, however, remains a threat to its use, and attempts have been made to understand the resistance mechanisms. Previous work showed that the resistance to B. sphaericus in a Culex quinquefasciatus colony is associated with the absence of the approximately 60-kDa binary toxin receptor in larvae midgut microvilli. Here, the gene encoding the C. quinquefasciatus toxin receptor, Cqm1, was cloned and sequenced from a susceptible colony. The deduced amino-acid sequence confirmed its identity as an alpha-glucosidase, and analysis of the corresponding gene sequence from resistant larvae implicated a 19-nucleotide deletion as the basis for resistance. This deletion changes the ORF and originates a premature stop codon, which prevents the synthesis of the full-length Cqm1. Expression of the truncated protein, however, was not detected when whole larvae extracts were probed with antibodies raised against an N-terminal 45-kDa recombinant fragment of Cqm1. It seems that the premature stop codon directs the mutated cqm1 to the nonsense-mediated decay pathway of mRNA degradation. In-gel assays confirmed that a single alpha-glucosidase protein is missing from the resistant colony. Further in vitro affinity assays showed that the recombinant fragment binds to the toxin, and mapped the binding site to the N-terminus of the receptor. PMID:16689941

  6. Docking and SAR studies of salacinol derivatives as alpha-glucosidase inhibitors.

    PubMed

    Nakamura, Shinya; Takahira, Kazunori; Tanabe, Genzoh; Morikawa, Toshio; Sakano, Mika; Ninomiya, Kiyofumi; Yoshikawa, Masayuki; Muraoka, Osamu; Nakanishi, Isao

    2010-08-01

    Salacinol is a potent alpha-glucosidase inhibitor isolated from Salacia reticulata, and a good lead compound for an antidiabetic drug. It is essential to clarify the binding state of salacinol to alpha-glucosidase for efficient optimization study using structure-based drug design. Redocking simulations of two inhibitors, acarbose and casuarine whose complex structures are known, were performed to assure the appropriate docking pose prediction. The simulation reproduced both experimental binding states with accuracy. Then, using the same simulation protocol, the binding mode of salacinol and its derivatives has been predicted. Salacinol bound to the protein with a similar binding mode as casuarine, and the predicted structures could explain most of the structure-activity relationships of salacinol derivatives. PMID:20598536

  7. Screening alpha-glucosidase and alpha-amylase inhibitors from natural compounds by molecular docking in silico.

    PubMed

    Jhong, Chien-Hung; Riyaphan, Jirawat; Lin, Shih-Hung; Chia, Yi-Chen; Weng, Ching-Feng

    2015-01-01

    The alpha-glucosidase inhibitor is a common oral anti-diabetic drug used for controlling carbohydrates normally converted into simple sugars and absorbed by the intestines. However, some adverse clinical effects have been observed. The present study seeks an alternative drug that can regulate the hyperglycemia by down-regulating alpha-glucosidase and alpha-amylase activity by molecular docking approach to screen the hyperglycemia antagonist against alpha-glucosidase and alpha-amylase activities from the 47 natural compounds. The docking data showed that Curcumin, 16-hydroxy-cleroda-3,13-dine-16,15-olide (16-H), Docosanol, Tetracosanol, Antroquinonol, Berberine, Catechin, Quercetin, Actinodaphnine, and Rutin from 47 natural compounds had binding ability towards alpha-amylase and alpha-glucosidase as well. Curcumin had a better biding ability of alpha-amylase than the other natural compounds. Analyzed alpha-glucosidase activity reveals natural compound inhibitors (below 0.5 mM) are Curcumin, Actinodaphnine, 16-H, Quercetin, Berberine, and Catechin when compared to the commercial drug Acarbose (3 mM). A natural compound with alpha-amylase inhibitors (below 0.5 mM) includes Curcumin, Berberine, Docosanol, 16-H, Actinodaphnine/Tetracosanol, Catechin, and Quercetin when compared to Acarbose (1 mM). When taken together, the implication is that molecular docking is a fast and effective way to screen alpha-glucosidase and alpha-amylase inhibitors as lead compounds of natural sources isolated from medicinal plants. PMID:26154585

  8. Novel {alpha}-glucosidase from human gut microbiome : substrate specificities and their switch.

    SciTech Connect

    Tan, K.; Tesar, C.; Wilton, R.; Keigher, L.; Babnigg, G.; Joachimiak, A.; Biosciences Division

    2010-01-01

    The human intestine harbors a large number of microbes forming a complex microbial community that greatly affects the physiology and pathology of the host. In the human gut microbiome, the enrichment in certain protein gene families appears to be widespread. They include enzymes involved in carbohydrate metabolism such as glucoside hydrolases of dietary polysaccharides and glycoconjugates. We report the crystal structures (wild type, 2 mutants, and a mutant/substrate complex) and the enzymatic activity of a recombinant {alpha}-glucosidase from human gut bacterium Ruminococcus obeum. The first ever protein structures from this bacterium reveal a structural homologue to human intestinal maltase-glucoamylase with a highly conserved catalytic domain and reduced auxiliary domains. The {alpha}-glucosidase, a member of GH31 family, shows substrate preference for {alpha}(1-6) over {alpha}(1-4) glycosidic linkages and produces glucose from isomaltose as well as maltose. The preference can be switched by a single mutation at its active site, suggestive of widespread adaptation to utilization of a variety of polysaccharides by intestinal micro-organisms as energy resources. Novel {alpha}-glucosidase from human gut microbiome: substrate specificities and their switch.

  9. Purification and characterization of alpha-glucosidase I from Japanese honeybee (Apis cerana japonica) and molecular cloning of its cDNA.

    PubMed

    Wongchawalit, Jintanart; Yamamoto, Takeshi; Nakai, Hiroyuki; Kim, Young-Min; Sato, Natsuko; Nishimoto, Mamoru; Okuyama, Masayuki; Mori, Haruhide; Saji, Osamu; Chanchao, Chanpen; Wongsiri, Siriwat; Surarit, Rudee; Svasti, Jisnuson; Chiba, Seiya; Kimura, Atsuo

    2006-12-01

    alpha-Glucosidase (JHGase I) was purified from a Japanese subspecies of eastern honeybee (Apis cerana japonica) as an electrophoretically homogeneous protein. Enzyme activity of the crude extract was mainly separated into two fractions (component I and II) by salting-out chromatography. JHGase I was isolated from component I by further purification procedure using CM-Toyopearl 650M and Sephacryl S-100. JHGase I was a monomeric glycoprotein (containing 15% carbohydrate), of which the molecular weight was 82,000. Enzyme displayed the highest activity at pH 5.0, and was stable up to 40 degrees C and in a pH-range of 4.5-10.5. JHGase I showed unusual kinetic features: the negative cooperative behavior on the intrinsic reaction on cleavage of sucrose, maltose, and p-nitrophenyl alpha-glucoside, and the positive cooperative behavior on turanose. We isolated cDNA (1,930 bp) of JHGase I, of which the deduced amino-acid sequence (577 residues) confirmed that JHGase I was a member of alpha-amylase family enzymes. Western honeybees (Apis mellifera) had three alpha-glucosidase isoenzymes (WHGase I, II, and III), in which JHGase I was considered to correspond to WHGase I. PMID:17151473

  10. Alpha-glucosidase inhibitor from Kothala-himbutu (Salacia reticulata WIGHT).

    PubMed

    Ozaki, Sei; Oe, Hiromi; Kitamura, Shinichi

    2008-06-01

    A polyhydroxylated cyclic 13-membered sulfoxide (1) was isolated from an aqueous extract of Kothala-himbutu ( Salacia reticulata WIGHT). The structure of compound 1 was elucidated by 1D and 2D NMR and APCI-MS methods. The alpha-glucosidase inhibitory activity of compound 1 (IC 50: maltase, 0.227 microM; sucrase, 0.186 microM; isomaltase, 0.099 microM) was much greater than the inhibitory activity of salacinol and kotalanol, which were previously isolated from Kothala-himbutu. PMID:18547114

  11. An alpha-glucosidase inhibitor from an endophytic Cladosporium sp. with potential as a biocontrol agent.

    PubMed

    Singh, Bahaderjeet; Kaur, Tamanreet; Kaur, Sanehdeep; Manhas, Rajesh K; Kaur, Amarjeet

    2015-02-01

    This study highlights the importance of alpha-glucosidase inhibitors as mechanisms for endophyte-mediated resistance to insect pests. One of the major benefits which endophytes confer on plants is providing resistance against insect pests. This built-in defense mechanism of the plant can be used for exploring ecofriendly strategies for pest control. In the present study, 34 endophytic fungi were isolated from Tinospora cordifolia and screened for their ability to produce alpha-glucosidase inhibitors. Maximum inhibitory activity was observed in an isolate from T. cordifolia (TN-9S), identified to be Cladosporium sp. The inhibitor was purified using chromatographic techniques. The insecticidal activity of the purified inhibitor was evaluated against Spodoptera litura. The inhibitor induced a significant mortality in the larvae of S. litura and adversely affected its survival and development. It also inhibited the activity of α-glycosidases in vivo in the gut of the larvae. The purified inhibitor was determined to be a phenolic compound with amine groups, demonstrating a noncompetitive type of inhibition in vitro. The production of the inhibitor was optimized. Response surface methodology (RSM) analysis revealed a significant interaction between dextrose and malt extract, with first-order effect of pH. PMID:25432333

  12. Modulation of starch digestion for slow glucose release through "toggling" of activities of mucosal "alpha"-glucosidases

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Starch digestion involves the breakdown by alpha-amylase to small linear and branched malto-oligosaccharides, which are in turn hydrolyzed to glucose by the mucosal alpha-glucosidases, maltase-glucoamylase (MGAM) and sucrase-isomaltase (SI). MGAM and SI are anchored to the small intestinal brush-bor...

  13. Hypoglycemic effect of 13-membered ring thiocyclitol, a novel alpha-glucosidase inhibitor from Kothala-himbutu (Salacia reticulata).

    PubMed

    Oe, Hiromi; Ozaki, Sei

    2008-07-01

    A novel 13-membered ring thiocyclitol, isolated from an aqueous extract of Kothala-himbutu (Salacia reticulata), inhibited alpha-glucosidase in vitro. The inhibitory activity was investigated by maltose- and sucrose-loading on Wistar rats. This study found significant lowering of postprandial glucose levels, and the potency of 13-membered ring thiocyclitol was confirmed in vivo. PMID:18603797

  14. Inhibitory Properties of Aqueous Ethanol Extracts of Propolis on Alpha-Glucosidase

    PubMed Central

    Zhang, Hongcheng; Wang, Guangxin; Beta, Trust; Dong, Jie

    2015-01-01

    The objective of the present study was to evaluate the inhibitory properties of various extracts of propolis on alpha-glucosidase from baker's yeast and mammalian intestine. Inhibitory activities of aqueous ethanol extracts of propolis were determined by using 4-nitrophenyl-D-glucopyranoside, sucrose and maltose as substrates, and acarbose as a positive reference. All extracts were significantly effective in inhibiting α-glucosidase from baker's yeast and rat intestinal sucrase in comparison with acarbose (P < 0.05). The 75% ethanol extracts of propolis (75% EEP) showed the highest inhibitory effect on α-glucosidase and sucrase and were a noncompetitive inhibition mode. 50% EEP, 95%, EEP and 100% EEP exhibited a mixed inhibition mode, while water extracts of propolis (WEP) and 25% EEP demonstrated a competitive inhibition mode. Furthermore, WEP presented the highest inhibitory activity against maltase. These results suggest that aqueous ethanol extracts of propolis may be used as nutraceuticals for the regulation of postprandial hyperglycemia. PMID:25767553

  15. Alpha-glucosidase inhibitors in the early treatment of type 2 diabetes

    PubMed Central

    van de Laar, Floris Alexander

    2008-01-01

    Alpha-glucosidase inhibitors (AGIs) are drugs that inhibit the absorption of carbohydrates from the gut and may be used in the treatment of patients with type 2 diabetes or impaired glucose tolerance. There is currently no evidence that AGIs are beneficial to prevent or delay mortality or micro- or macrovascular complications in type 2 diabetes. Its beneficial effects on glycated hemoglobin are comparable to metformin or thiazolidinediones, and probably slightly inferior to sulphonylurea. In view of the total body of evidence metformin seems to be superior to AGIs. More long-term studies are needed to study the effects of AGIs compared to other drugs. For patient with impaired glucose tolerance AGIs may prevent, delay or mask the occurrence of type 2 diabetes. A possible beneficial effect on cardiovascular events should be confirmed in new studies. PMID:19337532

  16. AGI, a previously unreported D. melanogaster {alpha}-glucosidase: Partial purification, characterization, and cytogenetic mapping

    SciTech Connect

    Parker, G.F.; Roberts, D.B.

    1996-04-01

    Inbred Drosophila melanogaster stocks were surveyed for {alpha}-glucosidases with nondenaturing gel electrophoresis using a fluorogenic substrate to stain the gels. The glucosidase most active under these conditions is polymorphic. We established that the polymorphism is genetic in origin and that the glucosidase was not likely to be a previously characterized enzyme. The gene encoding the enzyme was mapped cytogenetically to 33 A1-2- 33A8-B1, confirming that this is an enzyme not yet reported in D. melanogaster. The enzyme was partially purified by elution from nondenaturing gels, which enable us to establish that it has optimal activity at pH 6 and interacts most strongly with {alpha}- 1 -4 glucosides. A developmental and tissue survey suggested that this enzyme could have a purely digestive role or be involved in carbohydrate metabolism inside the organism. We propose that this enzyme is involved in either starch digestion or glycogen metabolism. 37 refs., 6 figs., 1 tab.

  17. Methyl caffeate as an alpha-glucosidase inhibitor from Solanum torvum fruits and the activity of related compounds.

    PubMed

    Takahashi, Keisuke; Yoshioka, Yasuyuki; Kato, Eisuke; Katsuki, Shigeki; Iida, Osamu; Hosokawa, Keizo; Kawabata, Jun

    2010-01-01

    In screening experiments for rat intestinal alpha-glucosidase (sucrase and maltase) inhibitors in 325 plants cultivated in Japan's southern island, of Tanegashima, marked inhibition against both sucrase and maltase was found in the extract of the fruit of Solanum torvum. Enzyme-assay guided fractionation of the extract led to the isolation of methyl caffeate (1) as a rat intestinal sucrase and maltase inhibitor. We examined 13 caffeoyl derivatives for sucrase- and maltase-inhibitory activities. The results showed that methyl caffeate (1) had a most favorable structure for both sucrase and maltase inhibition, except for a higher activity of methyl 3,4,5-trihydroxycinnamate (14) against sucrase. Its moderate inhibitory action against alpha-glucosidase provides a prospect for antidiabetic usage of S. torvum fruit. PMID:20378981

  18. Molecular cloning and characterization of a Candida tsukubaensis alpha-glucosidase gene in the yeast Saccharomyces cerevisiae.

    PubMed

    Kinsella, B T; Larkin, A; Bolton, M; Cantwell, B A

    1991-07-01

    The molecular cloning of an alpha-glucosidase gene isolated from a Candida tsukubaensis (CBS 6389) genomic library in Saccharomyces cervisiae is reported. The cloned gene is contained within a 6.2 kb Sau3A DNA fragment and directs the synthesis and secretion of an amylolytic enzyme into the extracellular medium of the recombinant host, S. cerevisiae. The cloned enzyme was found to have an unusually broad substrate specificity and is capable of hydrolysing alpha-1,2, alpha-1,3, alpha-1,4 and alpha-1,6 linked, as well as aryl and alkyl, D-glucosides. On the basis of its substrate specificity profile, the cloned enzyme was classified as an alpha-glucosidase (E.C. 3.2.1.20). It has a pH optimum in the range 4.2-4.6, a temperature optimum of 58 degrees C and is readily inactivated at pasteurization temperature (60 degrees C). Southern blot analysis failed to reveal any homology between the cloned gene and genomic DNA isolated from other well characterized amylolytic yeasts. A rapid plate-assay, based on the utilization of a chromogenic substrate X-alpha-D-glucoside to detect the expression of the cloned alpha-glucosidase in S. cerevisiae transformants, was developed. PMID:1934116

  19. Celgosivir, an alpha-glucosidase I inhibitor for the potential treatment of HCV infection.

    PubMed

    Durantel, David

    2009-08-01

    Celgosivir, in development by MIGENIX Inc for the treatment of HCV infection, is an oral prodrug of the natural product castanospermine that inhibits alpha-glucosidase I, an enzyme that plays a critical role in viral maturation by initiating the processing of the N-linked oligosaccharides of viral envelope glycoproteins. Celgosivir is well absorbed in vitro and in vivo, and is rapidly converted to castanospermine. Celgosivir has a novel mechanism of action (ie, host-directed glycosylation), and demonstrates broad antiviral activity in vitro. The agent is not efficient as a monotherapy for the treatment of HCV, but has demonstrated a synergistic effect in combination with the current standard of care, PEGylated IFNalpha2b plus ribavirin, both in vitro and in phase II clinical trials. At the time of publication, a phase II trial was underway to investigate the safety, tolerability and antiviral effect of celgosivir in combination with PEGylated IFNalpha2b plus ribavirin for up to 1 year in patients with chronic HCV infection. Celgosivir may prove to be a valuable component for combination therapy and may help to prevent the apparition of drug resistance. Long-term toxicity studies are necessary to confirm the safety of this novel drug in humans. PMID:19649930

  20. Evaluation of anti-diabetic and alpha glucosidase inhibitory action of anthraquinones from Rheum emodi.

    PubMed

    Arvindekar, Aditya; More, Tanaji; Payghan, Pavan V; Laddha, Kirti; Ghoshal, Nanda; Arvindekar, Akalpita

    2015-08-01

    Rheum emodi is used as a culinary plant across the world and finds an eminent role in the Ayurvedic and traditional Chinese systems of medicine. The plant is known to principally contain 1,8-dihydroxyanthraquinones (DHAQs) like rhein, aloe emodin, emodin, chrysophanol and physcion that possess diverse pharmacological and therapeutic actions. The present work deals with developing a platform technology for isolation of these DHAQs and evaluating their anti-diabetic potential. Herein, we report the anti-hyperglycemic activity and alpha glucosidase (AG) inhibitory actions of five isolated DHAQs from R. emodi. All the five isolated DHAQs showed good anti-hyperglycemic activity with aloe emodin exhibiting maximum lowering of blood glucose in an oral glucose tolerance test. However, on evaluation of the AG inhibitory potential of the DHAQs only emodin exhibited potent intestinal AG inhibition (93 ± 2.16%) with an IC50 notably lower than acarbose. Subsequent kinetic studies indicated a mixed type of inhibition for emodin. In vivo studies using oral maltose load showed almost total inhibition for emodin when compared to acarbose. Molecular docking studies revealed the presence of an allosteric topographically distinct 'quinone binding site' and showed that interaction with Ser 74 occurs exclusively with emodin, which is vital for AG inhibition. The net benefit from the glucose lowering effect and mixed type inhibition by emodin would enable the administration of a small dosage that is safe and non-toxic in the case of prolonged use in treating diabetes. PMID:26145710

  1. Inhibitory effects of hyssop (Hyssopus officinalis) extracts on intestinal alpha-glucosidase activity and postprandial hyperglycemia.

    PubMed

    Miyazaki, Hiroyuki; Matsuura, Hideyuki; Yanagiya, Chikako; Mizutani, Junya; Tsuji, Masayoshi; Ishihara, Chiaki

    2003-10-01

    It has been known that Hyssopus officinalis (hyssop) is a herb that grows in the wild and is a source of natural antioxidants. We previously reported that a-glucosidase inhibitors, (2S, 3S)1-O-beta-D-6'-O-cinnamoylglucopyranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol and (2S, 3S)1-O-beta-D-glucopranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol, from the dry leaves of hyssop, were isolated. This study examined the alpha-glucosidase inhibitory effects of hyssop extracts on intestinal carbohydrate absorption in rat everted gut sac and carbohydrate-loaded hyperglycemia in mice. In the everted gut sac experiment, 10 mM sucrose- and 5 mM maltose-treated increases in glucose concentration in the serosal compartment were inhibited in the presence of 0.5 and 1.0 mg/ mL hyssop extracts, although a 10 mM glucose-induced increase in serosal glucose was not inhibited by the extracts. Additionally, hyperglycemia in sucrose- and maltose-loaded mice was significantly suppressed at an early stage, within 30 to 60 min by oral pre-administration of 300 and 100 mg/kg hyssop extracts, respectively. These findings suggest that hyssop extracts inhibited the digestion of complex carbohydrates, but not that of absorbable monosaccharide, and might be a useful supplemental food for hyperglycemia. PMID:14703310

  2. Quantitation of Alpha-Glucosidase Activity Using Fluorinated Carbohydrate Array and MALDI-TOF-MS.

    PubMed

    Yang, Hyojik; Chan, Allen L; LaVallo, Vincent; Cheng, Quan

    2016-02-01

    Quantitation of alpha-glucosidase (α-GD) activity is of significance to diagnosis of many diseases including Pompe disease and type II diabetes. We report here a new method to determine α-GD activity using matrix-assisted laser desorption/ionization (MALDI)-time-of-flight (TOF) mass spectrometry (MS) in combination with carbohydrate microarray and affinity surface chemistry. Carbohydrate probes are synthesized for capture of the enzymatic reaction products and the adducts are loaded onto a fluorinated gold surface to generate an array, which is followed by characterization by MALDI-TOF-MS. The ratio of intensities is used to determine the level of activity of several enzymes. In addition, half maximal inhibitory concentration (IC50) of acarbose and epigallocatechin gallate are also determined using this approach, and the results agree well with the reported values. This method is advantageous as compared to conventional colorimetric techniques that typically suffer matrix interference problems from samples. The use of the polyfluorinated surface has effectively suppressed the interference. PMID:26760440

  3. Production and characterization of recombinant human acid α-glucosidase in transgenic rice cell suspension culture.

    PubMed

    Jung, Jae-Wan; Kim, Nan-Sun; Jang, Seon-Hui; Shin, Yun-Ji; Yang, Moon-Sik

    2016-05-20

    Pompe disease is a fatal genetic muscle disorder caused by a deficiency of acid α-glucosidase (GAA), a glycogen-degrading lysosomal enzyme. In this study, the human GAA cDNA gene was synthesized from human placenta cells and cloned into a plant expression vector under the control of the rice α-amylase 3D (RAmy3D) promoter. The plant expression vector was introduced into rice calli (Oryza sativa L. cv. Dongjin) mediated by Agrobacterium tumefaciens. Genomic DNA PCR and Northern blot analysis were used to determine the integration and mRNA expression of the hGAA gene in the putative transgenic rice cells. SDS-PAGE and Western blot analysis showed that the glycosylated precursor recombinant hGAA had a molecular mass of 110kDa due to the presence of seven N-glycosylation sites. The accumulation of hGAA protein in the culture medium was approximately 37mg/L after 11 days of culturing in a sugar depletion medium. The His tagged-hGAA protein was purified using an Ni-NTA column and confirmed as the precursor form of hGAA without the signal peptide encoded by the cDNA on the N-terminal amino acid sequence. The acid alpha-glucosidase activity of hGAA produced in transgenic rice cells gave results similar to those of the enzyme produced by CHO cells. PMID:27050503

  4. Expression of alpha subunit of alpha glucosidase II in adult mouse brain regions and selective organs

    PubMed Central

    Anji, Antje; Miller, Hayley; Raman, Chandrasekar; Phillips, Mathew; Ciment, Gary; Kumari, Meena

    2014-01-01

    Alpha glucosidase II (GII), a resident of endoplasmic reticulum (ER) and an important enzyme in folding of nascent glycoproteins, is heterodimeric consisting of alpha (GIIα) and beta (GIIβ) subunits. The catalytic GIIα subunit with the help of mannose 6-phosphate receptor homology (MRH) domain of GIIβ sequentially hydrolyzes two α-1-3-linked glucose residues in the 2nd step of N-linked oligosaccharide-mediated protein folding. The soluble GIIα subunit is retained in the ER through its interaction with the HDEL-containing GIIβ subunit. N-glycosylation and correct protein folding is crucial for protein stability, trafficking, and cell surface expression of several proteins in the brain. Alterations in N-glycosylation lead to abnormalities in neuronal migration and mental retardation, various neurodegenerative diseases, and invasion of malignant gliomas. Inhibitors of GII are used to inhibit cell proliferation and migration in a variety of different pathologies such as viral infection, cancer and diabetes. In spite of the widespread usage of GIIα inhibitory drugs and the role of GIIα in brain function little is known about its expression in brain and other tissues. Here, we report generation of a highly specific chicken antibody to GIIα subunit and its characterization by Western blotting and immunoprecipitation using cerebral cortical extracts. Using this antibody we show that the GIIα protein is highly expressed in testis, kidney, and lung, with the least amount in heart. GIIα polypeptide levels in whole brain were comparable to spleen. However, higher expression of GIIα protein was detected in cerebral cortex reflecting its continuous requirement in correct folding of cell surface proteins. PMID:25131991

  5. Enzyme-assisted extraction of phenolics from winemaking by-products: Antioxidant potential and inhibition of alpha-glucosidase and lipase activities.

    PubMed

    de Camargo, Adriano Costa; Regitano-d'Arce, Marisa Aparecida Bismara; Biasoto, Aline Camarão Telles; Shahidi, Fereidoon

    2016-12-01

    Phenolics in food and agricultural processing by-products exist in the soluble and insoluble-bound forms. The ability of selected enzymes in improving the extraction of insoluble-bound phenolics from the starting material (experiment I) or the residues containing insoluble-bound phenolics (experiment II) were evaluated. Pronase and Viscozyme improved the extraction of insoluble-bound phenolics as evaluated by total phenolic content, antioxidant potential as determined by ABTS and DPPH assays, and hydroxyl radical scavenging capacity, reducing power as well as evaluation of inhibition of alpha-glucosidase and lipase activities. Viscozyme released higher amounts of gallic acid, catechin, and prodelphinidin dimer A compared to Pronase treatment. Furthermore, p-coumaric and caffeic acids, as well as procyanidin dimer B, were extracted with Viscozyme but not with Pronase treatment. Solubility plays an important role in the bioavailability of phenolic compounds, hence this study may assist in better exploitation of phenolics from winemaking by-products as functional food ingredients and/or supplements. PMID:27374548

  6. Effect of lipid extracts of Nigella sativa L. seeds on the liver ATP reduction and alpha-glucosidase inhibition.

    PubMed

    Sobhi, Widad; Stevigny, Caroline; Duez, Pierre; Calderon, Bedro Buc; Atmani, Djebbar; Benboubetra, Mustapha

    2016-01-01

    Various extracts from the seeds of Nigella sativa have been used in traditional folk medicine to treat inflammation, liver disorders and arthritis. These seeds have been experimentally shown to possess antioxidant and hepatoprotective properties. Beside the hypoglycaemic and hypolipidemic effects, this study was carried out to evaluate, in vitro, toxicological effect of lipid extracts from the Nigella sativa seeds. The tested fractions were: (i) defatted methanolic extract, (ii) total lipid extract obtained by hexane extraction from methanolic extract and (iii) neutral and polar lipid fractions. The fractions were assessed, in vitro, for their inhibitory activity potential on the enzyme alpha-glucosidase as suppressing the enzyme activity is one among the therapeutic approaches to attenuate postprandial hyperglycemia. High inhibition of alpha-glucosidase by the two polar lipid fractions (F6 and F7) was reflected by their IC50 (0.51±0.04mg/ml and 0.55±0.09mg/ml, respectively), compared to acarbose (0.53±0.06mg/ml) and thymoquinone (0.65±0.05mg/ml). The hypoglycaemic effect of the polar lipid fraction of Nigella sativa could be explained by the inhibition of alpha-glucosidase, which is one of early steps of carbohydrate metabolism. Toxicological evaluation was investigated on precision-cut rat liver slices (PCLS). On PCLS, lipid extracts reduced ATP levels by 27 to 35%. Results indicate suggest that Nigella sativa extracts don't show a hepatoprotective effect against acetaminophen, but don't exhibit a major hepatotoxicity when tested alone. PMID:26826824

  7. Binding mode analyses and pharmacophore model development for sulfonamide chalcone derivatives, a new class of alpha-glucosidase inhibitors.

    PubMed

    Bharatham, Kavitha; Bharatham, Nagakumar; Park, Ki Hun; Lee, Keun Woo

    2008-06-01

    Sulfonamide chalcone derivatives are a new class of non-saccharide compounds that effectively inhibit glucosidases which are the major targets in the treatment of Type 2 diabetes and HIV infection. Our aim is to explore their binding mode of interaction at the active site by comparing with the sugar derivatives and to develop a pharmacophore model which would represent the critical features responsible for alpha-glucosidase inhibitory activity. The homology modeled structure of Saccharomyces cerevisiae alpha-glucosidase was built and used for molecular docking of non-sugar/sugar derivatives. The validated docking results projected the crucial role of NH group in the binding of sugar/non-sugar derivatives to the active site. Ligplot analyses revealed that Tyr71, and Phe177 form hydrophobic interactions with sugar/non-sugar derivatives by holding the terminal glycosidic ring mimics. Molecular dynamic (MD) simulation studies were performed for protein alone and with chalcone derivative to prove its binding mechanism as shown by docking/Ligplot results. It would also help to substantiate the homology modeled structure stability. With the knowledge of the crucial interactions between ligand and protein from docking and MD simulation studies, features for pharmacophore model development were chosen. The CATALYST/HipHop was used to generate a five featured pharmacophore model with a training set of five non-sugar derivatives. As validation, all the crucial features of the model were perfectly mapped onto the 3D structures of the sugar derivatives as well as the newly tested non-sugar derivatives. Thus, it can be useful in virtual screening for finding new non-sugar derivatives as alpha-glucosidase inhibitors. PMID:18096420

  8. Predicting Cross Reactive Immunological Material (CRIM) Status in Pompe Disease Using GAA Mutations: Lessons Learned from 10 Years of Clinical Laboratory Testing Experience

    PubMed Central

    Bali, Deeksha S.; Goldstein, Jennifer L.; Banugaria, Suhrad; Dai, Jian; Mackey, Joanne; Rehder, Catherine; Kishnani, Priya S.

    2012-01-01

    Enzyme replacement therapy (ERT) for Pompe disease using recombinant acid alpha-glucosidase (rhGAA) has resulted in increased survival although the clinical response is variable. Cross Reactive Immunological Material (CRIM)-negative status has been recognized as a poor prognostic factor. CRIM-negative patients make no GAA protein and develop sustained high antibody titers to ERT that render the treatment ineffective. Antibody titers are generally low for the majority of CRIM-positive patients and there is typically a better clinical outcome. Because immunomodulation has been found to be most effective in CRIM-negative patients prior to, or shortly after, initiation of ERT, knowledge of CRIM status is important before ERT is begun. We have analyzed 243 patients with infantile Pompe disease using a Western blot method for determining CRIM status and using cultured skin fibroblasts. Sixty-one out of 243 (25.1%) patients tested from various ethnic backgrounds were found to be CRIM-negative. We then correlated the CRIM results with GAA gene mutations where available (52 CRIM-negative and 88 CRIM-positive patients). We found that, in most cases, CRIM status can be predicted from GAA mutations, potentially circumventing the need for invasive skin biopsy and time wasted in culturing cells in the future. Continued studies in this area will help to increase the power of GAA gene mutations in predicting CRIM status as well as possibly identifying CRIM-positive patients who are at risk for developing high antibody titers. PMID:22252923

  9. [The decomposition of Maillard reaction products by amylolytic enzymes. 1. Reversible inhibition of alpha- and glucoamylase and alpha-glucosidase by oligosaccharide Amidori compounds].

    PubMed

    Schumacher, D; Kroh, L W

    1994-10-01

    The influence of Amadori-compounds (fructosyl-, maltulosyl- and maltotriulosylglycin) on the activity of the enzymes alpha-glucosidase (from Saccharomyces cerevisiae), glucoamylase (from Aspergillus niger) and alpha-amylase (from porcine pancreas) was studied. Fructosylglycin was not hydrolyzed by all three enzymes. alpha-Glucosidase hydrolyzes maltulosylglycin 10 times slower than maltotriulosylglycin. Glucoamylase and alpha-amylase catalyze only the cleavage of maltotriulosylglycin to form glucose and maltulosylglycin. The activities of alpha-glucosidase and glucoamylase are inhibited through the Amadori-compounds fructosyl- and maltulosylglycin. These Amadori-compounds don't influence the activity of alpha-amylase. Electronic effects or interactions between the secondary amino function of Amadori-compounds and the carboxyl- or carboxylate groups of active centres could be responsible for such an inhibition. PMID:7839734

  10. Potential risk of alpha-glucosidase inhibitor administration in prostate cancer external radiotherapy by exceptional rectal gas production: a case report

    PubMed Central

    2014-01-01

    Introduction Radiotherapy is a standard treatment for prostate cancer, and image-guided radiotherapy is increasingly being used to aid precision of dose delivery to targeted tissues. However, precision during radiotherapy cannot be maintained when unexpected intrafraction organ motion occurs. Case presentation We report our experience of internal organ motion caused by persistent gas production in a patient taking an alpha-glucosidase inhibitor. A 68-year-old Japanese man with prostate cancer visited our institution for treatment with helical tomotherapy. He suffered from diabetes mellitus and took an alpha-glucosidase inhibitor. Routine treatment planning computed tomography showed a large volume of rectal gas; an enema was given to void the rectum. Subsequent treatment planning computed tomography again showed a large volume of gas. After exercise (walking) to remove the intestinal gas, a third scan was performed as a test scan without tight fixation, which showed a sufficiently empty rectum for planning. However, after only a few minutes, treatment planning computed tomography again showed extreme accumulation of gas. Therefore, we postponed treatment planning computed tomography and consulted his doctor to suspend the alpha-glucosidase inhibitor, which was the expected cause of his persistent gas. Four days after the alpha-glucosidase inhibitor regimen was suspended, we took a fourth treatment planning computed tomography and made a treatment plan without gas accumulation. Thereafter, the absence of rectal gas accumulation was confirmed using daily megavolt computed tomography before treatment, and the patient received 37 fractions of intensity-modified radiotherapy at 74Gy without rectal gas complications. In this case study, the alpha-glucosidase inhibitor induced the accumulation of intestinal gas, which may have caused unexpected organ motion, untoward reactions, and insufficient doses to clinical targets. Conclusions We suggest that patients who are taking

  11. Punica granatum flower extract, a potent alpha-glucosidase inhibitor, improves postprandial hyperglycemia in Zucker diabetic fatty rats.

    PubMed

    Li, Yuhao; Wen, Suping; Kota, Bhavani Prasad; Peng, Gang; Li, George Qian; Yamahara, Johji; Roufogalis, Basil D

    2005-06-01

    Postprandial hyperglycemia plays an important role in the development of type 2 diabetes and has been proposed as an independent risk factor for cardiovascular diseases. The flowering part of Punica granatum Linn. (Punicaceae) (PGF) has been recommended in Unani literature as a remedy for diabetes. We investigated the effect and action mechanism of a methanolic extract from PGF on hyperglycemia in vivo and in vitro. Oral administration of PGF extract markedly lowered plasma glucose levels in non-fasted Zucker diabetic fatty rats (a genetic model of obesity and type 2 diabetes), whereas it had little effect in the fasted animals, suggesting it affected postprandial hyperglycemia in type 2 diabetes. In support of this conclusion the extract was found to markedly inhibit the increase of plasma glucose levels after sucrose loading, but not after glucose loading in mice, and it had no effect on glucose levels in normal mice. In vitro, PGF extract demonstrated a potent inhibitory effect on alpha-glucosidase activity (IC50: 1.8 microg/ml). The inhibition is dependent on the concentration of enzyme and substrate, as well as on the length of pretreatment with the enzyme. These findings strongly suggest that PGF extract improves postprandial hyperglycemia in type 2 diabetes and obesity, at least in part, by inhibiting intestinal alpha-glucosidase activity. PMID:15894133

  12. Enzyme-synthesized highly branched maltodextrins have slow glucose generation at the mucosal alpha-glucosidase level and are slowly digestible "in vivo"

    Technology Transfer Automated Retrieval System (TEKTRAN)

    For digestion of starch in humans, alpha-amylase first hydrolyzes starch molecules to produce alpha-limit dextrins, followed by complete hydrolysis to glucose by the mucosal alpha-glucosidases in the small intestine. It is known that alpha-1,6 linkages in starch are hydrolyzed at a lower rate than a...

  13. Facile synthesis of de-O-sulfated salacinols: revision of the structure of neosalacinol, a potent alpha-glucosidase inhibitor.

    PubMed

    Tanabe, Genzoh; Xie, Weijia; Ogawa, Ai; Cao, Changnian; Minematsu, Toshie; Yoshikawa, Masayuki; Muraoka, Osamu

    2009-04-15

    Facile synthesis of de-O-sulfated salacinols (3) was developed by employing the coupling reaction of an epoxide, 1,2-anhydro-3,4-di-O-benzyl-D-erythritol (9) with 2,3,5-tri-O-benzyl-1,4-dideoxy-1,4-epithio-D-arabinitol (10) as the key reaction. The reported structure of a potent alpha-glucosidase inhibitor named neosalacinol (8), isolated recently from Ayurvedic medicine Salacia oblonga, was proved incorrect, and revised to be de-O-sulfated salacinol formate (3c) by comparison of the spectroscopic properties with those of the authentic specimen synthesized. Discrepancies and confusion in the literature concerning the NMR spectroscopic properties of salacinol (1) have also been clarified. PMID:19307117

  14. Inhibitory effect of methanol extract of Rosa damascena Mill. flowers on alpha-glucosidase activity and postprandial hyperglycemia in normal and diabetic rats.

    PubMed

    Gholamhoseinian, A; Fallah, H; Sharifi far, F

    2009-10-01

    The effect of a methanol extract of Rosa damascena Mill. flowers was studied, in comparison to the alpha-glucosidase inhibitor acarbose, in normal and diabetic rats. The inhibition mode of this extract was examined by measuring enzyme activity in different concentrations of substrate for Lineweaver-Burk plot analysis. The results show that Rosa damascena extract has an intensive inhibitory effect on alpha-glucosidase. Its inhibition was found to be noncompetitive. Oral administration of this plant extract (100 to 1000 mg/kg body wt.) significantly decreased blood glucose after maltose loading in normal and diabetic rats in a dose-dependent manner. These results suggest that Rosa damascena might exert an anti-diabetic effect by suppressing carbohydrate absorption from the intestine and can reduce the postprandial glucose level. PMID:19380218

  15. [Synthesis of beta-maltosides, derivatives of p-nitrophenol, 2-chloro-4-nitrophenol, and 4-methylumbelliferone, and their use as substrates for determining alpha-glucosidase activity].

    PubMed

    Voznyĭ, Ia V; Lukomskaia, I S; Lanskaia, I M; Podkidysheva, E I

    1996-01-01

    Synthesis of beta-maltosides, p-nitrophenyl-beta-D-maltoside and 4-methylumbelliferyl-beta-D-maltoside, based on interaction of hepta-acetate-beta-D-maltosyl fluoride with the corresponding trimethylsilyl ethers of p-nitrophenol and 4-methylumbelliferone is described. 2-Chloro-4-nitrophenyl-beta-D-maltoside was synthesized by interaction of hepta-acetate-alpha-D-maltosyl bromide with 2-chloro-4-nitrophenol in two phase system using phase transfer catalyst. The method of assay of neutral alpha-glucosidase from human kidney and urine using synthesized beta-maltosides (p-nitrophenyl-beta-D-maltoside, 2-chloro-4-nitrophenyl-beta-D-maltoside and 4-methylumbelliferyl-beta-D-maltoside) as substrates and beta-glucosidase as an auxiliary enzyme is proposed. The method is simple, convenient and 10-fold more sensitive than the commonly used alpha-glucosidase assay procedure with the corresponding synthetic alpha-glucosides, p-nitrophenyl-alpha-D-glucoside and 4-methylumbelliferyl-alpha-D-glucoside. A modification of the method, with p-nitrophenyl-beta-D-maltoside as substrate, was applied to the semi-automatic assay of urinary alpha-glucosidase in 96-well microtitre plates. PMID:9254525

  16. Biological indicators for steam sterilization: characterization of a rapid biological indicator utilizing Bacillus stearothermophilus spore-associated alpha-glucosidase enzyme.

    PubMed

    Albert, H; Davies, D J; Woodson, L P; Soper, C J

    1998-11-01

    The alpha-glucosidase enzyme was isolated from vegetative cells and spores of Bacillus stearothermophilus, ATCC 7953. Spore-associated enzyme had a molecular weight of approximately 92,700, a temperature optimum of 60 degrees C, and a pH optimum of 7.0-7.5. The enzyme in crude aqueous spore extract was stable for 30 min up to a temperature of 65 degrees C, above which the enzyme was rapidly denatured. The optimal pH for stability of the enzyme was approximately 7.2. The alpha-glucosidase in crude vegetative cell extract had similar characteristics to the spore-associated enzyme but its molecular weight was 86,700. The vegetative cell and spore-associated enzymes were cross-reactive. The enzymes are postulated to derive from a single gene product, which undergoes modification to produce the spore-associated form. The location of alpha-glucosidase in the spore coats (outside the spore protoplast) is consistent with the location of most enzymes involved in activation, germination and outgrowth. PMID:9830122

  17. Alpha-glucosidase inhibitors and hepatotoxicity in type 2 diabetes: a systematic review and meta-analysis.

    PubMed

    Zhang, Longhao; Chen, Qiyan; Li, Ling; Kwong, Joey S W; Jia, Pengli; Zhao, Pujing; Wang, Wen; Zhou, Xu; Zhang, Mingming; Sun, Xin

    2016-01-01

    Alpha-glucosidase inhibitors (AGIs) was reported to be associated with several rare adverse hepatic events, but with inconsistent results. We aimed to investigate the risk of hepatotoxicity associated with the use of AGIs in patients with type 2 diabetes mellitus (T2DM), and performed a systematic review and meta-analysis. Fourteen studies (n = 2881) were eligible, all of which were RCTs. Meta-analysis of data regarding elevation of more than 3-fold the upper limit of normal (ULN) of AST and ALT showed statistically significant differences between AGIs treatment versus control (OR 6.86, 95% CI 2.50 to 18.80; OR 6.48, 95% CI 2.40 to 17.49). Subgroup analyses of elevation of more than 1.8-fold ULN of AST and ALT by dose of AGIs showed differential effects on AST and ALT (AST: OR 0.38 vs 7.31, interaction P = 0.003; ALT: OR 0.32 vs 4.55, interaction p = 0.02). Meta-analysis showed that AGIs might increase the risk of hepatotoxicity, and higher dose appeared to be associated with higher risk of hepatotoxicity. However, the evidence is limited with surrogate measures (i.e. ALT and AST), and no clinically important adverse events were observed. PMID:27596383

  18. Alpha-glucosidase inhibitors and hepatotoxicity in type 2 diabetes: a systematic review and meta-analysis

    PubMed Central

    Zhang, Longhao; Chen, Qiyan; Li, Ling; Kwong, Joey S. W.; Jia, Pengli; Zhao, Pujing; Wang, Wen; Zhou, Xu; Zhang, Mingming; Sun, Xin

    2016-01-01

    Alpha-glucosidase inhibitors (AGIs) was reported to be associated with several rare adverse hepatic events, but with inconsistent results. We aimed to investigate the risk of hepatotoxicity associated with the use of AGIs in patients with type 2 diabetes mellitus (T2DM), and performed a systematic review and meta-analysis. Fourteen studies (n = 2881) were eligible, all of which were RCTs. Meta-analysis of data regarding elevation of more than 3-fold the upper limit of normal (ULN) of AST and ALT showed statistically significant differences between AGIs treatment versus control (OR 6.86, 95% CI 2.50 to 18.80; OR 6.48, 95% CI 2.40 to 17.49). Subgroup analyses of elevation of more than 1.8-fold ULN of AST and ALT by dose of AGIs showed differential effects on AST and ALT (AST: OR 0.38 vs 7.31, interaction P = 0.003; ALT: OR 0.32 vs 4.55, interaction p = 0.02). Meta-analysis showed that AGIs might increase the risk of hepatotoxicity, and higher dose appeared to be associated with higher risk of hepatotoxicity. However, the evidence is limited with surrogate measures (i.e. ALT and AST), and no clinically important adverse events were observed. PMID:27596383

  19. Miconia sp. Increases mRNA Levels of PPAR Gamma and Inhibits Alpha Amylase and Alpha Glucosidase

    PubMed Central

    Ortíz-Martinez, David Mizael; Rivas-Morales, Catalina; de la Garza-Ramos, Myriam Angelica; Verde-Star, Maria Julia; Nuñez-Gonzalez, Maria Adriana

    2016-01-01

    Diabetes mellitus is a public health problem worldwide. For this reason, ethanolic extract of Miconia sp. from Oaxaca, Mexico, was selected in search of an alternative against this disease. The effect of Miconia sp. on mRNA expression of PPARγ on cell line 3T3-L1, its effect on alpha amylase and alpha glucosidase, lipid accumulation during adipogenesis, and cell viability on VERO cells were evaluated. The mRNA levels of PPARγ increased on 1.393 ± 0.008 folds, lipid accumulation was increased by 29.55% with Miconia sp. extract and 34.57% with rosiglitazone, and α-amylase and α-glycosidase were inhibited with IC50 values from 28.23 ± 2.15 μg/mL and 1.95 ± 0.15 μg/mL, respectively; the IC50 on antiproliferative activity on VERO cells was 314.54 ± 45.40 μg/mL. In case of α-amylase and α-glycosidase assays, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of enzymatic activity. On the other hand, on antiproliferative activity, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of cell proliferation. It was concluded that the compounds present in Miconia sp. ethanolic extract increase mRNA expression of PPARγ, inhibit α-amylase and α-glucosidase, and increase lipid accumulation. It constitutes an alternative as adjuvant in diabetes mellitus treatment; therefore, we recommend continuing identifying the compounds responsible for its promising in vivo antidiabetic activity. PMID:27478477

  20. Miconia sp. Increases mRNA Levels of PPAR Gamma and Inhibits Alpha Amylase and Alpha Glucosidase.

    PubMed

    Ortíz-Martinez, David Mizael; Rivas-Morales, Catalina; de la Garza-Ramos, Myriam Angelica; Verde-Star, Maria Julia; Nuñez-Gonzalez, Maria Adriana; Leos-Rivas, Catalina

    2016-01-01

    Diabetes mellitus is a public health problem worldwide. For this reason, ethanolic extract of Miconia sp. from Oaxaca, Mexico, was selected in search of an alternative against this disease. The effect of Miconia sp. on mRNA expression of PPARγ on cell line 3T3-L1, its effect on alpha amylase and alpha glucosidase, lipid accumulation during adipogenesis, and cell viability on VERO cells were evaluated. The mRNA levels of PPARγ increased on 1.393 ± 0.008 folds, lipid accumulation was increased by 29.55% with Miconia sp. extract and 34.57% with rosiglitazone, and α-amylase and α-glycosidase were inhibited with IC50 values from 28.23 ± 2.15 μg/mL and 1.95 ± 0.15 μg/mL, respectively; the IC50 on antiproliferative activity on VERO cells was 314.54 ± 45.40 μg/mL. In case of α-amylase and α-glycosidase assays, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of enzymatic activity. On the other hand, on antiproliferative activity, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of cell proliferation. It was concluded that the compounds present in Miconia sp. ethanolic extract increase mRNA expression of PPARγ, inhibit α-amylase and α-glucosidase, and increase lipid accumulation. It constitutes an alternative as adjuvant in diabetes mellitus treatment; therefore, we recommend continuing identifying the compounds responsible for its promising in vivo antidiabetic activity. PMID:27478477

  1. Quantitative determination of potent alpha-glucosidase inhibitors, salacinol and kotalanol, in Salacia species using liquid chromatography-mass spectrometry.

    PubMed

    Muraoka, Osamu; Morikawa, Toshio; Miyake, Sohachiro; Akaki, Junji; Ninomiya, Kiyofumi; Yoshikawa, Masayuki

    2010-09-01

    A practical HPLC-MS method for the quantitative determination of salacinol (1) and kotalanol (2), potent alpha-glucosidase inhibitors from Salacia species (Hippocrateaceae) as a specific remedy for diabetes in Ayurvedic system, was developed. The optimum conditions of separation and detection of these two constituents were achieved on a Asahipak NH2P-50 column (5 mcirom particle size, 2.0 mm i.d. x 150 mm) with a CH(3)CN-H(2)O mobile phase, associated with MS using electrospray ionization source. The overall recoveries of 1 (85.8-112.6%) and 2 (99.7-106.1%), and relative standard deviation values of intra- and inter-day precision were lower than 6.8 and 8.5%, respectively. The detection (S/N=3) and quantitation limits (S/N=10) were established to be 0.015 and 0.050 ng for 1, and 0.030 and 0.10 ng for 2, respectively. The correlation coefficients of all the calibration curves showed good linearity within test ranges. The extraction process was also optimized as 2 h immersion in water under reflux. The method was applied to evaluate extracts of three kinds of Salacia species, i.e. S. reticulata, S. oblonga, and S. chinensis, and those of four different parts, i.e. roots, stems, leaves and fruits of the same material, revealing that the extract from the roots of S. reticulata had the highest contents of these compounds. The results indicated that the assay was reproducible and precise and could be readily utilized for the evaluation of Salacia species. PMID:20303690

  2. Purification and characterization of an alpha-glucosidase from a hyperthermophilic archaebacterium, Pyrococcus furiosus, exhibiting a temperature optimum of 105 to 115 degrees C.

    PubMed Central

    Costantino, H R; Brown, S H; Kelly, R M

    1990-01-01

    Pyrococcus furiosus is a strictly anaerobic hyperthermophilic archaebacterium with an optimal growth temperature of about 100 degrees C. When this organism was grown in the presence of certain complex carbohydrates, the production of several amylolytic enzymes was noted. These enzymes included an alpha-glucosidase that was located in the cell cytoplasm. This alpha-glucosidase has been purified 310-fold and corresponded to a protein band of 125 kilodaltons as resolved by 10% sodium dodecyl sulfate-polyacrylamide gel electrophoresis. The enzyme exhibited optimum activity at pH 5.0 to 6.0 and over a temperature range of 105 to 115 degrees C. Kinetic analysis conducted at 108 degrees C revealed hydrolysis of the substrates p-nitrophenyl-alpha-D-glucopyranoside (PNPG), methyl-alpha-D-glucopyranoside, maltose, and isomaltose. Trace activity was detected towards p-nitrophenyl-beta-D-glucopyranoside, and no activity could be detected towards starch or sucrose. Inhibition studies conducted at 108 degrees C with PNPG as the substrate and maltose as the inhibitor yielded a Ki for maltose of 14.3 mM. Preincubation for 30 min at 98 degrees C in 100 mM dithiothreitol and 1.0 M urea had little effect on enzyme activity, whereas preincubation in 1.0% sodium dodecyl sulfate and 1.0 M guanidine hydrochloride resulted in significant loss of enzyme activity. Purified alpha-glucosidase from P. furiosus exhibited remarkable thermostability; incubation of the enzyme at 98 degrees C resulted in a half life of nearly 48 h. Images PMID:2163383

  3. Alpha-Glucosidase Promotes Hemozoin Formation in a Blood-Sucking Bug: An Evolutionary History

    PubMed Central

    Mury, Flávia Borges; da Silva, José Roberto; Ferreira, Ligia Souza; dos Santos Ferreira, Beatriz; de Souza-Filho, Gonçalo Apolinário; de Souza-Neto, Jayme Augusto; Ribolla, Paulo Eduardo Martins; Silva, Carlos Peres; do Nascimento, Viviane Veiga; Machado, Olga Lima Tavares; Berbert-Molina, Marília Amorim; Dansa-Petretski, Marilvia

    2009-01-01

    Background Hematophagous insects digest large amounts of host hemoglobin and release heme inside their guts. In Rhodnius prolixus, hemoglobin-derived heme is detoxified by biomineralization, forming hemozoin (Hz). Recently, the involvement of the R. prolixus perimicrovillar membranes in Hz formation was demonstrated. Methodology/Principal Findings Hz formation activity of an α-glucosidase was investigated. Hz formation was inhibited by specific α-glucosidase inhibitors. Moreover, Hz formation was sensitive to inhibition by Diethypyrocarbonate, suggesting a critical role of histidine residues in enzyme activity. Additionally, a polyclonal antibody raised against a phytophagous insect α-glucosidase was able to inhibit Hz formation. The α-glucosidase inhibitors have had no effects when used 10 h after the start of reaction, suggesting that α-glucosidase should act in the nucleation step of Hz formation. Hz formation was seen to be dependent on the substrate-binding site of enzyme, in a way that maltose, an enzyme substrate, blocks such activity. dsRNA, constructed using the sequence of α-glucosidase gene, was injected into R. prolixus females' hemocoel. Gene silencing was accomplished by reduction of both α-glucosidase and Hz formation activities. Insects were fed on plasma or hemin-enriched plasma and gene expression and activity of α-glucosidase were higher in the plasma plus hemin-fed insects. The deduced amino acid sequence of α-glucosidase shows a high similarity to the insect α-glucosidases, with critical histidine and aspartic residues conserved among the enzymes. Conclusions/Significance Herein the Hz formation is shown to be associated to an α-glucosidase, the biochemical marker from Hemipteran perimicrovillar membranes. Usually, these enzymes catalyze the hydrolysis of glycosidic bond. The results strongly suggest that α-glucosidase is responsible for Hz nucleation in the R. prolixus midgut, indicating that the plasticity of this enzyme may play

  4. Is there a role for alpha-glucosidase inhibitors in the prevention of type 2 diabetes mellitus?

    PubMed

    Scheen, André J

    2003-01-01

    Type 2 diabetes mellitus is a major health problem associated with excess morbidity and mortality. As the prevalence of this metabolic disorder is rapidly increasing and current treatment fails to stabilise the disease in most patients, prevention should be considered as a key objective in the near future. People who develop type 2 diabetes pass through a phase of impaired glucose tolerance (IGT). Defects in the action and/or secretion of insulin are the two major abnormalities leading to development of glucose intolerance. Any intervention in the impaired glucose tolerance phase that reduces resistance to insulin or protects the beta-cells, or both, should prevent or delay progression to diabetes.Acarbose, miglitol and voglibose act by competitively inhibiting the alpha-glucosidases, a group of key intestinal enzymes involved in the digestion of carbohydrates. They decrease both postprandial hyperglycaemia and hyperinsulinaemia, and thereby may improve sensitivity to insulin and release the stress on beta-cells. These compounds do not induce hypoglycaemia and have a good safety profile, although gastrointestinal adverse effects may limit long-term compliance to therapy. The recent placebo-controlled prospective STOP-noninsulin-dependent diabetes mellitus (STOP-NIDDM) trial demonstrated that acarbose 100mg three times daily reduces the risk of developing type 2 diabetes in patients with IGT (relative risk reduction of 25% after a mean follow-up of 3.3 years). The 6-year Early Diabetes Intervention Trial (EDIT), comparing the effect of acarbose 50mg three times daily to that of metformin, showed a trend to a positive effect of acarbose compared with placebo, in a mid-term 3-year analysis, which should be confirmed in the final analysis. To our knowledge, no such prevention intervention trials have been or are currently being performed with miglitol or voglibose. In conclusion, because of its absence of toxicity and its particular mechanism of action on

  5. Alternative Agents in Type 1 Diabetes in Addition to Insulin Therapy: Metformin, Alpha-Glucosidase Inhibitors, Pioglitazone, GLP-1 Agonists, DPP-IV Inhibitors, and SGLT-2 Inhibitors.

    PubMed

    DeGeeter, Michelle; Williamson, Bobbie

    2016-04-01

    Insulin is the mainstay of current treatment for patients with type 1 diabetes mellitus (T1DM). Due to increasing insulin resistance, insulin doses are often continually increased, which may result in weight gain for patients. Medications currently approved for the treatment of type 2 diabetes offer varying mechanisms of action that can help to reduce insulin resistance and prevent or deter weight gain. A MEDLINE search was conducted to review literature evaluating the use of metformin, alpha-glucosidase inhibitors, pioglitazone, glucagon-like peptide 1 agonists, dipeptidyl peptidase, and sodium-dependent glucose transporter 2 inhibitors, in patients with T1DM. Varying results were found with some benefits including reductions in hemoglobin A1c, decreased insulin doses, and favorable effects on weight. Of significance, a common fear of utilizing multiple therapies for diabetes treatment is the risk of hypoglycemia, and this review displayed limited evidence of hypoglycemia with multiple agents. PMID:25312263

  6. Pompe Disease

    MedlinePlus

    ... by mutations in a gene that makes an enzyme called acid alpha-glucosidase (GAA). Normally, the body ... stored form of sugar used for energy. The enzyme performs its function in intracellular compartments called lysosomes. ...

  7. [Constituents relating to anti-oxidative and alpha-glucosidase inhibitory activities in Yacon aerial part extract].

    PubMed

    Terada, Sumio; Ito, Kikuo; Yoshimura, Akira; Noguchi, Naoto; Ishida, Takashi

    2006-08-01

    Hot water extract of the aerial part of Yacon (Smallanthus sonchifolia, Compositae) showed potent free radical-scavenging activity and inhibitory effects on lipid peroxidation in rat brain homogenate. The most potent antioxidative activity focused on the 50% MeOH-eluted fraction on DIAION HP-20 column chromatography. The structure of the major component in the fraction was identified as 2,3,5-tricaffeoylaltraric acid (TCAA) based on spectroscopic evidence. The antioxidative activity of TCAA is superior to that of natural antioxidants such as (+/-)-catechin, alpha-tocopherol, and ellagic acid, and TCAA also showed selective maltase-inhibitory activity (IC(50) 49 microg/ml). As the hypoglycemic activity of Yacon extract was described in a previous report, the present results showing that the aerial part of Yacon has strong antioxidative activity may encourage its potential use as a food supplement to prevent type II diabetes. PMID:16880725

  8. The transcriptional activator GaaR of Aspergillus niger is required for release and utilization of d-galacturonic acid from pectin.

    PubMed

    Alazi, Ebru; Niu, Jing; Kowalczyk, Joanna E; Peng, Mao; Aguilar Pontes, Maria Victoria; van Kan, Jan A L; Visser, Jaap; de Vries, Ronald P; Ram, Arthur F J

    2016-06-01

    We identified the d-galacturonic acid (GA)-responsive transcriptional activator GaaR of the saprotrophic fungus, Aspergillus niger, which was found to be essential for growth on GA and polygalacturonic acid (PGA). Growth of the ΔgaaR strain was reduced on complex pectins. Genome-wide expression analysis showed that GaaR is required for the expression of genes necessary to release GA from PGA and more complex pectins, to transport GA into the cell, and to induce the GA catabolic pathway. Residual growth of ΔgaaR on complex pectins is likely due to the expression of pectinases acting on rhamnogalacturonan and subsequent metabolism of the monosaccharides other than GA. PMID:27174630

  9. Use of beta-maltosides (p-nitrophenyl-beta-D-maltoside, 2-chloro-4- nitrophenyl-beta-D-maltoside and 4-methylumbelliferyl-beta-D-maltoside) as substrates for the assay of neutral alpha-glucosidase from human kidney and urine.

    PubMed

    Lukomskaya, I S; Voznyi, Y V; Lanskaya, I M; Podkidisheva, E I

    1996-01-31

    The method of assay of neutral alpha-glucosidase from human kidney and urine using beta-maltosides (p-nitrophenyl-beta-D-maltoside [NP-beta-D-maltoside], 2-chloro-4-nitrophenyl-beta-D-maltoside]) [CNP-beta-D-maltoside] and 4-methylumbelliferyl-beta-D-maltosides ([MU-beta-D-maltoside]) as substrates and beta-glucosidase as an auxiliary enzyme is proposed. All three beta-maltosides are suitable substrates for the determination of neutral alpha-glucosidase activity but MU-beta-D-maltoside is the most sensitive due to its methylumbelliferyl moiety. The method is simple, convenient and 10-fold more sensitive than the commonly used alpha-glucosidase assay procedure with the corresponding synthetic alpha-glucosides, p-nitrophenyl- alpha-D-glucoside (NP-alpha-D-glucoside) and 4-methylumbelliferyl-alpha-D-glucoside (MU-alpha-D-glucoside). A modification of the method, with p-nitrophenyl-beta-D-maltoside as substrate, was applied to the semiautomatic assay of urinary alpha-glucosidase in 96-well microtitre plates. PMID:8714432

  10. Effect of Miglitol (Bay m1099), a new alpha-glucosidase inhibitor, on glucose, insulin, C-peptide and GIP responses to an oral sucrose load in patients with post-prandial hypoglycaemic symptoms.

    PubMed

    Renard, E; Parer-Richard, C; Richard, J L; Jureidini, S; Orsetti, A; Mirouze, J

    1991-01-01

    Sixteen patients suffering from symptoms suggestive of idiopathic reactive hypoglycaemia and reproducible during an oral glucose tolerance test when plasma glucose was less than or equal to 2.8 mM, were included in an acute, double-blind and cross-over study to test the efficacy of Miglitol (Bay m1099), a new alpha-glucosidase inhibitor versus placebo. Patients were randomized to ingest 100 mg Miglitol or placebo together with a sucrose solution (45 g/m2 body surface), one week apart. During four hours, plasma glucose levels were continuously monitored and plasma insulin and gastric inhibitory polypeptide (GIP) levels were measured at 30-minute intervals; serum C-peptide concentration was determined at 0, 30, 60 minutes and then every hour. The post-load rise in plasma glucose was significantly blunted by Miglitol, as shown by the reduced plasma glucose peak, the diminished early (0-120 min) area under the glycaemic curve and the decreased rate of plasma glucose rise. Thereafter, plasma glucose nadir was significantly raised and rate of plasma glucose fall was slowed by Miglitol with a concomitant improvement in the hypoglycaemic index. Insulin secretion was dampened as indicated by parallel reduction of plasma insulin and serum C-peptide peaks; morever, early area under the insulin curve and total (0-240 min) area under the C-peptide curve were significantly reduced. Decrease of plasma GIP peak and total area under the GIP curve were also significant. During sucrose tolerance test with Miglitol, hypoglycaemic symptoms were significantly alleviated but intestinal side-effects were common. Blunting the insulin response to glucose directly by delaying glucose absorption and indirectly through reducing GIP secretion, may be a valuable therapeutic approach in reactive hypoglycemia; nevertheless, long-term study with Miglitol are needed, due to the poor intestinal tolerance of this drug in the present acute study. PMID:1884880

  11. Functional characterization of the common c.-32-13T>G mutation of GAA gene: identification of potential therapeutic agents

    PubMed Central

    Dardis, Andrea; Zanin, Irene; Zampieri, Stefania; Stuani, Cristiana; Pianta, Annalisa; Romanello, Milena; Baralle, Francisco E.; Bembi, Bruno; Buratti, Emanuele

    2014-01-01

    Glycogen storage disease type II is a lysosomal storage disorder due to mutations of the GAA gene, which causes lysosomal alpha-glucosidase deficiency. Clinically, glycogen storage disease type II has been classified in infantile and late-onset forms. Most late-onset patients share the leaky splicing mutation c.-32-13T>G. To date, the mechanism by which the c.-32-13T>G mutation affects the GAA mRNA splicing is not fully known. In this study, we demonstrate that the c.-32-13T>G mutation abrogates the binding of the splicing factor U2AF65 to the polypyrimidine tract of exon 2 and that several splicing factors affect exon 2 inclusion, although the only factor capable of acting in the c.-32-13 T>G context is the SR protein family member, SRSF4 (SRp75). Most importantly, a preliminary screening using small molecules described to be able to affect splicing profiles, showed that resveratrol treatment resulted in a significant increase of normal spliced GAA mRNA, GAA protein content and activity in cells transfected with a mutant minigene and in fibroblasts from patients carrying the c-32-13T>G mutation. In conclusion, this work provides an in-depth functional characterization of the c.-32-13T>G mutation and, most importantly, an in vitro proof of principle for the use of small molecules to rescue normal splicing of c.-32-13T>G mutant alleles. PMID:24150945

  12. Peeled film GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    1990-01-01

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  13. Oleanolic acid and related derivatives as medicinally important compounds.

    PubMed

    Sultana, Nighat; Ata, Athar

    2008-12-01

    Oleanolic acid has been isolated from chloroform extract of Olea ferruginea Royle after removal of organic bases and free acids. The literature survey revealed it to be biologically very important. In this review the biological significance of oleanolic acid and its derivatives has been discussed. The aim of this review is to update current knowledge on oleanolic acid and its natural and semisynthetic analogs, focussing on its cytotoxic, antitumer, antioxidant, anti-inflamatory, anti-HIV, acetyl cholinesterase, alpha-glucosidase, antimicrobial, hepatoprotective, anti-inflammatory, antipruritic, spasmolytic activity, anti-angiogenic, antiallergic, antiviral and immunomodulatory activities. We present in this review, for the first time, a compilation of the most relevant scientific papers and technical reports of the chemical, pre-clinical and clinical research on the properties of oleanolic acid and its derivatives. PMID:18618318

  14. Peeled film GaAs solar cells for space power

    SciTech Connect

    Wilt, D.M.; Deangelo, F.L.; Thomas, R.D.; Bailey, S.G.; Landis, G.A.; Brinker, D.J.; Fatemi, N.S.

    1990-05-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  15. Peeled film GaAs solar cells for space power

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-01-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  16. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  17. Fracture mechanics evaluation of GaAs

    NASA Technical Reports Server (NTRS)

    Chen, C. P.

    1984-01-01

    A data base of mechanical and fracture properties for GaAs was generated. The data for single crystal GaAs will be used to design reusable GaAs solar modules. Database information includes; (1) physical property characterizations; (2) fracture behavior evaluations; and (3) strength of cells determined as a function of cell processing and material parameters.

  18. Neuropathology in respiratory-related motoneurons in young Pompe (Gaa(-/-)) mice.

    PubMed

    Turner, Sara M F; Hoyt, Aaron K; ElMallah, Mai K; Falk, Darin J; Byrne, Barry J; Fuller, David D

    2016-06-15

    Respiratory and/or lingual dysfunction are among the first motor symptoms in Pompe disease, a disorder resulting from absence or dysfunction of the lysosomal enzyme acid α-glucosidase (GAA). Here, we histologically evaluated the medulla, cervical and thoracic spinal cords in 6 weeks old asymptomatic Pompe (Gaa(-/-)) mice to determine if neuropathology in respiratory motor regions has an early onset. Periodic acid-Schiff (PAS) staining indicated glycogen accumulation was exclusively occurring in Gaa(-/-) hypoglossal, mid-cervical and upper thoracic motoneurons. Markers of DNA damage (Tunel) and ongoing apoptosis (Cleaved Caspase 3) did not co-localize with PAS staining, but were prominent in a medullary region which included the nucleus tractus solitarius, and also in the thoracic spinal dorsal horn. We conclude that respiratory-related motoneurons are particularly susceptible to GAA deficiency and that neuronal glycogen accumulation and neurodegeneration may occur independently in early stage disease. The data support early therapeutic intervention in Pompe disease. PMID:26921786

  19. Correction of glycogen storage disease type II by an adeno-associated virus vector containing a muscle-specific promoter.

    PubMed

    Sun, Baodong; Zhang, Haoyue; Franco, Luis M; Brown, Talmage; Bird, Andrew; Schneider, Ayn; Koeberl, Dwight D

    2005-06-01

    Glycogen storage disease type II (Pompe disease) causes death in infancy from cardiorespiratory failure due to acid alpha-glucosidase (GAA; acid maltase) deficiency. An AAV2 vector pseudotyped as AAV6 (AAV2/6 vector) transiently expressed high-level human GAA in GAA-knockout (GAA-KO) mice without reducing glycogen storage; however, in immunodeficient GAA-KO/SCID mice the AAV2/6 vector expressed high-level GAA and reduced the glycogen content of the injected muscle for 24 weeks. A CD4+/CD8+ lymphocytic infiltrate was observed in response to the AAV2/6 vector in immunocompetent GAA-KO mice. When a muscle-specific creatine kinase promoter was substituted for the CB promoter (AAV-MCKhGAApA), that AAV2/6 vector expressed high-level GAA and reduced glycogen content in immunocompetent GAA-KO mice. Muscle-restricted expression of hGAA provoked only a humoral (not cellular) immune response. Intravenous administration of a high number of particles of AAV-MCKhGAApA as AAV2/7 reduced the glycogen content of the heart and skeletal muscle and corrected individual myofibers in immunocompetent GAA-KO mice 24 weeks postinjection. In summary, persistent correction of muscle glycogen content was achieved with an AAV vector containing a muscle-specific promoter in GAA-KO mice, and this approach should be considered for muscle-targeted gene therapy in Pompe disease. PMID:15922959

  20. An alternative mechanism for guanidinoacetic acid to affect methylation cycle.

    PubMed

    Ostojic, Sergej M

    2014-12-01

    Guanidinoacetic acid (also known as glycocyamine; GAA) is an endogenous substance which occurs in humans and plays a central role in the biosynthesis of creatine. The formation of creatine from GAA consumes methyl groups, and increases production of homocysteine. GAA may have the potential to stimulate insulin secretion. Insulin reduces plasma homocysteine and raises methyl group supply. It is possible that the ability of GAA to trigger the insulin secretion modulates methyl group metabolism, and comparatively counterbalance for the direct effect of GAA on increased methylation demand. Possible insulinotropic effect of GAA may contribute to total in vivo methylation demand during biotransformation. PMID:25468046

  1. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  2. Effects of deuterium substitution alpha and beta to the reaction centre, 18O substitution in the leaving group, and aglycone acidity on hydrolyses of aryl glucosides and glucosyl pyridinium ions by yeast alpha-glucosidase. A probable failure of the antiperiplanar-lone-pair hypothesis in glycosidase catalysis.

    PubMed

    Hosie, L; Sinnott, M L

    1985-03-01

    Neither kcat. nor kcat./Km for five aryl alpha-D-glucopyranosides correlates with aglycone pKa, and isotope effects, described according to the convention used by Cleland [(1982) CRC Crit. Rev. Biochem. 13, 385-428], of 18(V) = 1.002 +/- 0.008, alpha D(V) = 1.01 +/- 0.04 and alpha D(V/K) = 0.969 +/- 0.035 are observed for p-nitrophenyl, and one of beta D(V) = 1.02 +/- 0.04 for phenyl alpha-D-glucopyranoside; kcat. but not kcat./Km, correlates with aglycone pKa for five alpha-D-glucopyranosyl pyridinium ions with a Brønsted coefficient of -0.61 +/- 0.06, and isotope effects of alpha D(V) = 1.22 +/- 0.02, beta D(V) = 1.13 +/- 0.01 and alpha D(V/K) = 1.018 +/- 0.046 for the 4-bromoisoquinolinium, and alpha D(V) = 1.15 +/- 0.02 and beta D(V) = 1.085 +/- 0.011 for the pyridinium salts are observed. These data require that a non-covalent event, fast in the case of the N-glycosides but slow in the case of the O-glycosides, precedes bond-breaking, and that bond-breaking involves substantial charge development on the glycone and near-perpendicularity of the C2-H bond to the planar oxocarbonium ion system. A model meeting these requirements is that the non-covalent event is a conjoint change of protein and substrate conformation which puts the pyranose ring in the 2,5B conformation of the bond-breaking transition state. This model also explains the contrast between the powerful inhibition of the enzyme by deoxynojirimycin (Ki = 23 +/- 3 microM) and feeble inhibition by castanospermine [Saul, Chambers, Molyneux & Elbein (1983) Arch. Biochem. Biophys. 221, 593-597], but is directly contrary to the predictions of Deslongchamps' 'Theory of Stereoelectronic Control' [Deslongchamps (1975) Tetrahedron 31, 2463-2490; (1983) Stereoelectronic Effects in Organic Chemistry, p. 39, Pergamon Press, Oxford]. PMID:3888191

  3. Pulse transformer for GaAs laser

    NASA Technical Reports Server (NTRS)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  4. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  5. GaAs Semi-Insulating Layer for a GaAs Device

    NASA Technical Reports Server (NTRS)

    Sherrill, G.; Mattauch, R. J.

    1986-01-01

    Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

  6. Guanidinoacetic acid as a performance-enhancing agent.

    PubMed

    Ostojic, Sergej M

    2016-08-01

    Guanidinoacetic acid (GAA; also known as glycocyamine or guanidinoacetate) is the natural precursor of creatine, and under investigation as a novel dietary agent. It was first identified as a natural compound in humans ~80 years ago. In the 1950s, GAA's use as a therapeutic agent was explored, showing that supplemental GAA improved patient-reported outcomes and work capacity in clinical populations. Recently, a few studies have examined the safety and efficacy of GAA and suggest potential ergogenic benefits for physically active men and women. The purpose of this review is to examine possible applications of GAA supplementation for exercise performance enhancement, safety, and legislation issues. PMID:26445773

  7. Ultra-Thin-Film GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Wang, K. L.; Shin, B. K.; Yeh, Y. C. M.; Stirn, R. J.

    1982-01-01

    Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  9. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  10. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  11. [Enzyme replacement therapy in a patient with Pompe disease].

    PubMed

    Fujikawa, Yoshinao; Kinoshita, Satoru; Miyamoto, Yusaku; Nakayama, Tojo; Endo, Yusaku; Sasaki, Masayuki

    2007-09-01

    Pompe disease is a rare autosomal recessive disease caused by the deficiency of acid alpha-glucosidase (GAA), which is required for the degradation of lysosomal glycogen. Glycogen accumulation in heart, muscle and liver eventually leads to muscle weakness, hepatomegaly and cardiomegaly. Although an approved therapy does not exist, the efficacy of enzyme replacement therapy (ERT) has recently been reported in multinational trials in Europe and the US. Here, we present data on the efficacy of recombinant human acid alpha-glucosidase (rhGAA) (provided by Genzyme Corporation) in a patient with Pompe disease. At 5 months of age, motor delay (could not raise his head) and cardiomegaly were observed. A definite diagnosis of Pompe disease was made at 8 months of age after the accumulation of glycogen in a muscle biopsy specimen was observed. This was confirmed by low GAA activity. Since then, motor delay predominated and he was unable to sit independently by age 2.5 years. Every 2 weeks, 20 mg/kg of rhGAA was infused intravenously. To assess the effectiveness, chest X-ray, echocardiography and auditory brain response were recorded. The patient was administered rhGAA for 26 months from 2 years and 8 months of age. Following the initiation of ERT, hepatomegaly and cardiac function (ejection fraction) were rapidly improved and motor function was gradually improved. At 4 years and 10 months, the patient could walk with support. No adverse event has been observed. It can be concluded that ERT with rhGAA is an effective and safe regimen for this case. PMID:17879614

  12. Surface and coordination chemistry related to GaAs

    NASA Astrophysics Data System (ADS)

    Keys, Andrea

    The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron diffraction and consist of planar three-coordinate monomers. Salient structural parameters (ra) include: Al-C = 2.005(3) A, Ga-C = 2.034(2) A. The geometries are controlled by inter-ligand interactions. The electron diffraction structures are compared to those determined by ab initio calculations for M(tBU)3 (M = Al, Ga, In). To understand the most suitable linkages for the surface of GaAs, model compounds were synthesized by reacting Ga(tBU)3 and [tBu2Ga(mu-Cl]2 with one molar equivalent of varying ligands. The synthesized compounds include chlorides, benzenethiolate, dithiocarbamates, carboxylates, amides, benzohydroxamate, and phenylphosphonate. The Ga ⋯ Ga and Ga-ligand interatomic distances for these compounds, as well as Group 15 and 16 donor bridging ligands, are compared to the values for the surface of GaAs and cubic-GaS in order to determine their suitability as linkage groups for self-assembled monolayers. The most suitable linkages were determined to be benzenethiol and phenylphophonic acid, and these were used to grow self-assembled monolayers on {100} GaAs. Carboxylic acid was also used, to determine the success of the organometallic model compounds in predicting the suitability of ligands for surface reaction. Self-assembled monolayers were also grown on Al2O3, using carboxylic acids and phenylphosphonic acids as the surface linkages. Metallo-organic chemical vapor deposition was performed using single-source precursors ( tBU)2Ga(S2CNR2). The tert -butyl gallium bis-dialkyl-dithiocarbamate compounds, (tBu)Ga(S2CNR2)2, are formed as minor products via ligand disproportionation reactions. Gallium sulfide (GaS) thin films have been grown at 375-425°C by atmospheric pressure metal-organic chemical vapor deposition using compounds (tBu) 2Ga(S2CNMe2) and (tBu)2Ga(S 2CNEt2) as single source precursors. Polycrystalline samples of the chalcogenides InSe, In2Se3

  13. Advanced physiological roles of guanidinoacetic acid.

    PubMed

    Ostojic, Sergej M

    2015-12-01

    Dietary guanidinoacetic acid (GAA) seems to improve cellular bioenergetics by stimulating creatine biosynthesis. However, GAA could have other biological functions that might affect its possible use as a food ingredient in human nutrition. In this paper, we identified several alternative physiological roles of supplemental GAA, including the stimulation of hormonal release and neuromodulation, an alteration of metabolic utilization of arginine, and an adjustment of oxidant-antioxidant status. A better knowledge of how GAA affects human physiology may facilitate its use as an experimental nutritional intervention for novel purposes and conditions. PMID:26411433

  14. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  15. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  16. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  17. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  18. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  19. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    NASA Astrophysics Data System (ADS)

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-02-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.

  20. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching.

    PubMed

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  1. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  2. Urinary excretion of guanidinoacetic acid in rats with diabetic nephropathy.

    PubMed

    Kiyatake, I; Nakamura, T; Koide, H

    2006-01-01

    Urinary guanidinoacetic acid (GAA) is a sensitive marker for gentamicin nephrotoxicity in rats. This study assesses the usefulness of GAA concentrations in the diagnosis of renal tubular injury in diabetic nephropathy. Serum, urine, and renal cortex samples were obtained from rats 1, 2, and 3 weeks after streptozotocin injection (65 mg/kg body weight). Guanidinoacetic acid levels were measured by high-performance liquid chromatography. N-acetyl-beta-D-glucosaminidase (NAG) activity in urine was determined by an enzymatic method. GAA levels in serum, urine, and renal cortex were significantly decreased in diabetic rats compared with those in control rats. In contrast, urinary NAG activity was significantly increased in diabetic rats. Decreases in serum, urine, and renal cortical GAA levels were attenuated by insulin treatment. These results indicate that a high serum glucose level may affect GAA synthesis in the renal cortex and that urinary GAA may be a clinically useful indicator of renal tubular injury in diabetic nephropathy. PMID:16538977

  3. Acoustic Wave Chemical Microsensors in GaAs

    SciTech Connect

    Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason; John L. Reno; Richard Kottenstette; Stephen A. Casalnuovo; Susan L. Hietala; Vincent M. Hietala

    1998-09-20

    High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

  4. The infantile-onset form of Pompe disease: an autopsy diagnosis

    PubMed Central

    Schultz, Regina

    2015-01-01

    Pompe disease (PD) is a rare, inherited autosomal recessive metabolic disorder caused by the deficiency of the lysosomal acid alpha-glucosidase (GAA) enzyme described in 1932 by the Dutch pathologist Joannes Cassianus Pompe. The prevalence of PD ranges from 1:40,000 to 1:300,000 births and depends on geographic and ethnic factors. Clinical manifestations may vary from a rapidly progressive disabling disease with cardiomegaly, hepatomegaly, weakness, generalized hypotonia, and death within the first year of life, to a mild presentation characterized by slowly progressive myopathy predominantly involving the skeletal muscles. The laboratory diagnostic gold standard is represented by the determination of the alpha-glucosidase activity. However, the muscle histology may also yield the diagnosis by evaluating the tissular glycogen accumulation. Until recently, supportive measures constituted the unique available therapy. Currently, the administration of the recombinant GAA is being used with promising results. The authors present the case of a 5-month-old boy, previously diagnosed with hypertrophic cardiomyopathy since the age of 2 months, who presented acute heart failure accompanied by biventricular dilation followed by refractory shock and death. The autopsy findings confirmed the glycogen-accumulation disease. PMID:26894045

  5. Enhanced Efficacy of an AAV Vector Encoding Chimeric, Highly-Secreted Acid α-glucosidase in Glycogen Storage Disease Type II

    PubMed Central

    Sun, Baodong; Zhang, Haoyue; Benjamin, Daniel K.; Brown, Talmage; Bird, Andrew; Young, Sarah P.; McVie-Wylie, Alison; Chen, Y-T; Koeberl, Dwight D.

    2009-01-01

    Glycogen storage disease type II (GSD-II; Pompe disease; MIM 232300) is an inherited muscular dystrophy caused by deficiency in the activity of the lysosomal enzyme acid α-glucosidase (GAA). We hypothesized that chimeric GAA containing an alternative signal peptide could increase the secretion of GAA from transduced cells and enhance the receptor-mediated uptake of GAA in striated muscle. The relative secretion of chimeric GAA from transfected 293 cells increased up to 26-fold. Receptor-mediated uptake of secreted, chimeric GAA corrected cultured GSD-II patient cells. High-level hGAA was sustained in the plasma of GSD-II mice for 24 weeks following administration of an AAV2/8 vector encoding chimeric GAA; furthermore, GAA activity was increased and glycogen content was significantly reduced in striated muscle and in the brain. Administration of only 1×1010 vector particles increased GAA activity in the heart and diaphragm for >18 weeks, whereas 3×1010 vector particles increased GAA activity and reduced glycogen content in the heart, diaphragm, and quadriceps. Furthermore, an AAV2/2 vector encoding chimeric GAA produced secreted hGAA for >12 weeks in the majority of treated GSD-II mice. Thus, chimeric, highly secreted GAA enhanced the efficacy of AAV vector-mediated gene therapy in GSD-II mice. PMID:16987711

  6. Cellular bioenergetics of guanidinoacetic acid: the role of mitochondria.

    PubMed

    Ostojic, Sergej M

    2015-10-01

    Guanidinoacetic acid (GAA) is a natural precursor of creatine, and a possible substrate for the creatine kinase (CK) enzyme system, serving as a creatine mimetic. Its direct role in cellular bioenergetics has been confirmed in several studies, however GAA utilization by CK seems to be a second-rate as compared to creatine, and compartment-dependent. Here we discuss various factors that might affect GAA use in high-energy phosphoryl transfer in the cytosol and mitochondria. PMID:26255041

  7. Efficacy of an adeno-associated virus 8-pseudotyped vector in glycogen storage disease type II.

    PubMed

    Sun, Baodong; Zhang, Haoyue; Franco, Luis M; Young, Sarah P; Schneider, Ayn; Bird, Andrew; Amalfitano, Andrea; Chen, Y-T; Koeberl, Dwight D

    2005-01-01

    Glycogen storage disease type II (GSD-II; Pompe disease) causes death in infancy from cardiorespiratory failure. The underlying deficiency of acid alpha-glucosidase (GAA; acid maltase) can be corrected by liver-targeted gene therapy in GSD-II, if secretion of GAA is accompanied by receptor-mediated uptake in cardiac and skeletal muscle. An adeno-associated virus (AAV) vector encoding human (h) GAA was pseudotyped as AAV8 (AAV2/8) and injected intravenously into immunodeficient GSD-II mice. High levels of hGAA were maintained in plasma for 24 weeks following AAV2/8 vector administration. A marked increase in vector copy number in the liver was demonstrated for the AAV2/8 vector compared to the analogous AAV2/2 vector. GAA deficiency in the heart and skeletal muscle was corrected with the AAV2/8 vector in male GSD-II mice, consistent with receptor-mediated uptake of hGAA. Male GSD-II mice demonstrated complete correction of glycogen storage in heart and diaphragm with the AAV2/8 vector, while female GSD-II mice had correction only in the heart. A biomarker for GSD-II was reduced in both sexes following AAV2/8 vector administration. Therefore, GAA production with an AAV2/8 vector in a depot organ, the liver, generated evidence for efficacious gene therapy in a mouse model for GSD-II. PMID:15585406

  8. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  9. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  10. Piezoelectric field in strained GaAs.

    SciTech Connect

    Chow, Weng Wah; Wieczorek, Sebastian Maciej

    2005-11-01

    This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.

  11. Eight-Bit-Slice GaAs General Processor Circuit

    NASA Technical Reports Server (NTRS)

    Weissman, John; Gauthier, Robert V.

    1989-01-01

    Novel GaAs 8-bit slice enables quick and efficient implementation of variety of fast GaAs digital systems ranging from central processing units of computers to special-purpose processors for communications and signal-processing applications. With GaAs 8-bit slice, designers quickly configure and test hearts of many digital systems that demand fast complex arithmetic, fast and sufficient register storage, efficient multiplexing and routing of data words, and ease of control.

  12. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  13. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  14. High efficiency, low cost thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1982-01-01

    The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

  15. Enhanced response to enzyme replacement therapy in Pompe disease after the induction of immune tolerance.

    PubMed

    Sun, Baodong; Bird, Andrew; Young, Sarah P; Kishnani, Priya S; Chen, Y-T; Koeberl, Dwight D

    2007-11-01

    Pompe disease, which results from mutations in the gene encoding the glycogen-degrading lysosomal enzyme acid alpha -glucosidase (GAA) (also called "acid maltase"), causes death in early childhood related to glycogen accumulation in striated muscle and an accompanying infantile-onset cardiomyopathy. The efficacy of enzyme replacement therapy (ERT) with recombinant human GAA was demonstrated during clinical trials that prolonged subjects' overall survival, prolonged ventilator-free survival, and also improved cardiomyopathy, which led to broad-label approval by the U.S. Food and Drug Administration. Patients who lack any residual GAA expression and are deemed negative for cross-reacting immunologic material (CRIM) have a poor response to ERT. We previously showed that gene therapy with an adeno-associated virus (AAV) vector containing a liver-specific promoter elevated the GAA activity in plasma and prevented anti-GAA antibody formation in immunocompetent GAA-knockout mice for 18 wk, predicting that liver-specific expression of human GAA with the AAV vector would induce immune tolerance and enhance the efficacy of ERT. In this study, a very low number of AAV vector particles was administered before initiation of ERT, to prevent the antibody response in GAA-knockout mice. A robust antibody response was provoked in naive GAA-knockout mice by 6 wk after a challenge with human GAA and Freund's adjuvant; in contrast, administration of the AAV vector before the GAA challenge prevented the antibody response. Most compellingly, the antibody response was prevented by AAV vector administration during the 12 wk of ERT, and the efficacy of ERT was thereby enhanced. Thus, AAV vector-mediated gene therapy induced a tolerance to introduced GAA, and this strategy could enhance the efficacy of ERT in CRIM-negative patients with Pompe disease and in patients with other lysosomal storage diseases. PMID:17924344

  16. New α-Glucosidase Inhibitory Triterpenic Acid from Marine Macro Green Alga Codium dwarkense Boergs

    PubMed Central

    Ali, Liaqat; Khan, Abdul Latif; Al-Kharusi, Lubna; Hussain, Javid; Al-Harrasi, Ahmed

    2015-01-01

    The marine ecosystem has been a key resource for secondary metabolites with promising biological roles. In the current study, bioassay-guided phytochemical investigations were carried out to assess the presence of enzyme inhibitory chemical constituents from the methanolic extract of marine green alga—Codium dwarkense. The bioactive fractions were further subjected to chromatographic separations, which resulted in the isolation of a new triterpenic acid; dwarkenoic acid (1) and the known sterols; androst-5-en-3β-ol (2), stigmasta-5,25-dien-3β,7α-diol (3), ergosta-5,25-dien-3β-ol (4), 7-hydroxystigmasta-4,25-dien-3-one-7-O-β-d-fucopyranoside (5), 7-hydroxystigmasta-4,25-dien-3-one (6), and stigmasta-5,25-dien-3β-ol (7). The structure elucidation of the new compound was carried out by combined mass spectrometry and 1D (1H and 13C) and 2D (HSQC, HMBC, COSY, and NOESY) NMR spectroscopic data. The sub-fractions and pure constituents were assayed for enzymatic inhibition of alpha-glucosidase. Compound 1 showed significant inhibition at all concentrations. Compounds 2, 3, 5, and 7 exhibited a dose-dependent response, whereas compounds 4–6 showed moderate inhibition. Utilizing such marine-derived biological resources could lead to drug discoveries related to anti-diabetics. PMID:26184240

  17. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants.

    PubMed

    Mohiuddin, M; Arbain, D; Islam, A K M Shafiqul; Ahmad, M S; Ahmad, M N

    2016-12-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α-D-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau (Ehretis laevis), Cemumar (Micromelum pubescens), and Kedondong (Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C. PMID:26887579

  18. Starch source influences dietary glucose generation at the mucosal alpha-glucosidase level

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The quality of starch digestion, related to the rate and extent of release of dietary glucose, is associated with glycemia-related problems such as diabetes and other metabolic syndrome conditions. Here, we found that the rate of glucose generation from starch is unexpectedly associated with mucosal...

  19. Phenolics of pomegranate peels: extraction optimization by central composite design and alpha glucosidase inhibition potentials.

    PubMed

    Çam, Mustafa; İçyer, Necattin Cihat

    2015-03-01

    Optimum water extraction conditions for phenolics of pomegranate peels were investigated by fractional factorial and face-centered central composite designs. Five potential factors were selected for the fractional factorial design: extraction technique, extraction temperature, extraction time, particle size and solvent to solid ratio. After eliminating statistically unimportant factors, a face-centered central composite design was set up with two controllable factors and with two responses: total phenolics and α-glucosidase inhibition activity. Optimum conditions were found as 100 °C for extraction temperature and 1 min for extraction time. There were no statistically significant differences (p > 0.05) between water extracts at optimized conditions and classical methanol extracts. Total phenolic content by HPLC was192.0 mg/g of pomegranate peels on dry matter basis. Phenolics of pomegranate peels showed α-glucosidase inhibition activity with an IC50 (concentration of phenolics required to inhibit 50 % of the enzyme activity) value of 5.56 ± 2.23 μg/ml. Pomegranate peel phenolics with its antioxidant and α-glucosidase inhibition properties might be a suitable ingredient for functional food applications. PMID:25745217

  20. Inhibition of Alpha-Glucosidase by Synthetic Derivatives of Lupane, Oleanane, Ursane and Dammarane Triterpenoids.

    PubMed

    Khusnutdinova, El'mira F; Smirnova, Irina E; Giniyatullina, Gul'nara V; Medvedeva, Natal'ya I; Yamansarov, Emil Yu; Kazakov, Dmitri V; Kazakova, Oxana B; Linh, Pham T; Viet, Do Quoc; Huong, DoThi Thu

    2016-01-01

    A variety of new and earlier synthesized lupane, oleanane, ursane and dammarane triterpenoids have been investigated for their inhibitory activity against α-glucosidase. 2,3-Indole-21 β-acetyl-20β,28-epoxy-18α,19βH-ursane and 3-oxo-3A-homo-3a-aza-20(S)-hydroxydammar-24(25)-ene were synthesized for the first time. The compounds 3, 4, 8-11 and 14 demonstrated strong in vitro inhibitory activity towards α-glucosidase with IC₅₀ values of 37.5-115.1 µM. 3-Deoxy-3a-homo-3a-aza-28-cinnamoyloxy-20(29)-lupene, with an IC₅₀ of 6.67 µM was 60-fold more active than the market drug acarbose. PMID:26996014

  1. Flavonoids and its derivatives from Callistephus chinensis flowers and their inhibitory activities against alpha-glucosidase

    PubMed Central

    Zhang, Xiaoshu; Liu, Zhenting; Bi, Xiuli; Liu, Jingxin; Li, Wei; Zhao, Yuqing

    2013-01-01

    Inhibitors of carbohydrate-hydrolysing enzymes play an important role for the treatment of diabetes. One of the therapeutic methods for decreasing of postprandial hyperglycemia is to retard absorption of glucose by the inhibition of carbohydrate- hydrolysing enzymes, such as α-glucosidase, in the digestive organs. To investigate the therapeutic potential of compounds from natural sources, Callistephus chinensis flowers (CCF) were tested for inhibition of α-glucosidase, and acarboes was used as the positive control. The 70 % ethanol extract of CCF exhibited significant α-glucosidase inhibitory activities with IC50 value of 8.14 μg/ml. The stepwise polarity fractions of CCF were tested further for in vitro inhibition of α-glucosidase. The ethyl acetate (EtOAc) fraction exhibited the most significant inhibitory activity. Eight pure compounds, apigenin, apigenin-7-O-β-D- glucoside, kaempferol, hyperin, naringenin, quercetin, luteolin, and kaempferol-7-O-β-D- glucoside, were isolated (using enzyme assay-guide fractionation method) from the EtOAc fraction. Among these, quercetin was the most active one (IC50 values 2.04 μg/ml), and it appears that the inhibiting percentages are close to acarbose (IC50 values 2.24 μg/ml), the positive control, on α-glucosidase inhibition. HPLC/UV analysis indicated that the major components of CCF are kaempferol, hyperin and quercetin. The presented results revealed that CCF containing these eight flavonoids could be a useful natural source in the development of a novel α-glucosidase inhibitory agent against diabetic complications. PMID:27298611

  2. Antiviral therapies targeting host ER alpha-glucosidases: current status and future directions.

    PubMed

    Chang, Jinhong; Block, Timothy M; Guo, Ju-Tao

    2013-09-01

    Endoplasmic reticulum (ER)-resident α-glucosidases I and II sequentially trim the three terminal glucose moieties on N-linked glycans attached to nascent glycoproteins. These reactions are the first steps of N-linked glycan processing and are essential for proper folding and function of many glycoproteins. Because most viral envelope glycoproteins contain N-linked glycans, inhibition of ER α-glucosidases with derivatives of 1-deoxynojirimycin (DNJ) or castanospermine (CAST), two well-studied pharmacophores of α-glucosidase inhibitors, efficiently disrupts the morphogenesis of a broad spectrum of enveloped viruses. Moreover, both DNJ and CAST derivatives have been demonstrated to prevent the death of mice infected with several distinct flaviviruses and filoviruses and suppress the multiplication of several other species of viruses in infected animals. N-Butyl derivative of DNJ (NB-DNJ) and 6 O-bytanoyl prodrug of CAST (Bu-CAST) have been evaluated in human clinical trials for their antiviral activities against human immunodeficiency virus and hepatitis C virus, and there is an ongoing trial of treating dengue patients with Bu-CAST. This article summarizes the current status of ER α-glucosidase-targeted antiviral therapy and proposes strategies for development of more efficacious and specific ER α-glucosidase inhibitors as broad-spectrum, drug resistance-refractory antiviral therapeutics. These host function-targeted, broad-spectrum antiviral agents do not rely on time-consuming etiologic diagnosis, and should therefore be particularly promising in the management of viral hemorrhagic fever and respiratory tract viral infections, medical conditions that can be caused by many different enveloped RNA viruses, with a short window for medical intervention. PMID:23816430

  3. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants

    NASA Astrophysics Data System (ADS)

    Mohiuddin, M.; Arbain, D.; Islam, A. K. M. Shafiqul; Ahmad, M. S.; Ahmad, M. N.

    2016-02-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α- d-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau ( Ehretis laevis), Cemumar ( Micromelum pubescens), and Kedondong ( Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C.

  4. Radioiron utilization and gossypol acetic acid in male rats

    SciTech Connect

    Tone, J.N.; Jensen, D.R.

    1985-01-01

    The 24-h incorporation of VZFe into circulating red blood cells, bone marrow, urine, liver, spleen, and skeletal muscle was measured in splenectomized and sham-splenectomized rats which had received a daily, oral dose of gossypol acetic acid (20 mg GAA/kg body wt) for 91 days. A significant decrease in total body weight gain was observed in all GAA treated animals. Splenectomized rats dosed with GAA exhibited a significant decrease in hemoglobin concentration, hematocrit and erythrocyte count. A significant increase in VZFe incorporation by red blood cells and a decrease in hepatic incorporation of VZFe indicate a preferential utilization of iron in erythropoiesis among GAA treated animals.

  5. Panel fabrication utilizing GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  6. Linearity of photoconductive GaAs detectors to pulsed electrons

    SciTech Connect

    Ziegler, L.H.

    1995-12-31

    The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined.

  7. Correction of multiple striated muscles in murine Pompe disease through adeno-associated virus-mediated gene therapy.

    PubMed

    Sun, Baodong; Young, Sarah P; Li, Ping; Di, Chunhui; Brown, Talmage; Salva, Maja Z; Li, Songtao; Bird, Andrew; Yan, Zhen; Auten, Richard; Hauschka, Stephen D; Koeberl, Dwight D

    2008-08-01

    Glycogen storage disease type II (Pompe disease; MIM 232300) stems from the deficiency of acid alpha-glucosidase (GAA; acid maltase; EC 3.2.1.20), which primarily involves cardiac and skeletal muscles. An adeno-associated virus 2/8 (AAV2/8) vector containing the muscle creatine kinase (MCK) (CK1) reduced glycogen content by approximately 50% in the heart and quadriceps in GAA-knockout (GAA-KO) mice; furthermore, an AAV2/8 vector containing the hybrid alpha-myosin heavy chain enhancer-/MCK enhancer-promoter (MHCK7) cassette reduced glycogen content by >95% in heart and >75% in the diaphragm and quadriceps. Transduction with an AAV2/8 vector was higher in the quadriceps than in the gastrocnemius. An AAV2/9 vector containing the MHCK7 cassette corrected GAA deficiency in the distal hindlimb, and glycogen accumulations were substantially cleared by human GAA (hGAA) expression therein; however, the analogous AAV2/7 vector achieved much lower efficacy. Administration of the MHCK7-containing vectors significantly increased striated muscle function as assessed by increased Rotarod times at 18 weeks after injection, whereas the CK1-containing vector did not increase Rotarod performance. Importantly, type IIb myofibers in the extensor digitalis longus (EDL) were transduced, thereby correcting a myofiber type that is unresponsive to enzyme replacement therapy. In summary, AAV8 and AAV9-pseudotyped vectors containing the MHCK7 regulatory cassette achieved enhanced efficacy in Pompe disease mice. PMID:18560415

  8. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  9. GaAs VLSI for aerospace electronics

    NASA Technical Reports Server (NTRS)

    Larue, G.; Chan, P.

    1990-01-01

    Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

  10. Implantation of carbon in GaAs

    SciTech Connect

    Moll, A.J.

    1992-03-01

    Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

  11. Co-administration of methyl donors along with guanidinoacetic acid reduces the incidence of hyperhomocysteinaemia compared with guanidinoacetic acid administration alone.

    PubMed

    Ostojic, Sergej M; Niess, Barbara; Stojanovic, Marko; Obrenovic, Milos

    2013-09-14

    Guanidinoacetic acid (GAA) is the natural biosynthetic precursor of creatine, in a metabolic reaction that requires only a methyl group transfer. The use of GAA as a food additive for restoring creatine load in human tissues is rather unexplored and data on efficacy and safety are limited. In particular, an increase in serum homocysteine after GAA administration can be regarded as critical and should be prevented. The present study evaluated the effects of orally administered GAA with and without methyl group donors on serum and urine creatine concentrations, and the occurrence of adverse events during an intervention in healthy human subjects. A total of twenty male and female volunteers were randomised in a double-blind design to receive either GAA (2.4 g/d) or GAA with methyl donors (2.4 g/d of GAA and 1.6 g/d of betaine HCl, 5 μg/d of vitamin B12, 10 mg/d of vitamin B6 and 600 μg/d of folic acid) by oral administration for 8 weeks. Serum and urine creatine increased significantly from before to after administration in both groups (P< 0.001). The proportion of participants who reported minor adverse events was 33.3 % in the GAA group, and 10.0 % in the GAA with methyl donors group (P= 0.30). Hyperhomocysteinaemia was found in 55.6 % of participants supplemented with GAA, while no participant experienced hyperhomocysteinaemia in the group supplemented with GAA and methyl donors (P= 0.01). In summary, both interventions strongly influenced creatine metabolism, resulting in a significant increase in fasting serum creatine. The concomitant supplementation of methyl donors along with GAA largely precluded the elevation of serum homocysteine caused by GAA administration alone. PMID:23351309

  12. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  13. Modeling atomic hydrogen diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Kagadei, Valerii A.; Nefyodtsev, E.

    2004-05-01

    The hydrogen diffusion model in GaAs in conditions of an intense flow of penetrating atoms has been developed. It is shown that the formation undersurface diffusion barrier layer from immobile interstitial molecules of hydrogen reduce probability of atoms penetration into crystal and rate of their diffusion in GaAs, and influence on the process of shallow- and/or deep-centers passivation. It is exhibited that the influence of diffusion barrier should be taken into account at optimum mode selection of GaAs structure hydrogenation.

  14. Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

    SciTech Connect

    Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Choi, J. W.; Ji, H.; Kim, G. T.

    2011-12-23

    Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

  15. GaAs VLSI technology and circuit elements for DSP

    NASA Astrophysics Data System (ADS)

    Mikkelson, James M.

    1990-10-01

    Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

  16. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mcnally, P. J.

    1972-01-01

    Calculations of GaAs solar cell output parameters were refined and a computer model was developed for parameter optimization. The results were analyzed to determine the material characteristics required for a high efficiency solar cell. Calculated efficiencies for a P/N cell polarity are higher than an N/P cell. Both cell polarities show efficiency to have a larger dependence on short circuit current than an open circuit voltage under nearly all conditions considered. The tolerances and requirements of a cell fabrication process are more critical for an N/P type than for a P/N type cell. Several solar cell fabrication considerations relative to junction formation using ion implantation are also discussed.

  17. Single-dose oral guanidinoacetic acid exhibits dose-dependent pharmacokinetics in healthy volunteers.

    PubMed

    Ostojic, Sergej M; Vojvodic-Ostojic, Aleksandra

    2015-03-01

    Guanidinoacetic acid (GAA), the natural precursor of creatine, has potential as a dietary supplement for human nutrition, yet no data are available regarding its dose-dependent pharmacokinetic (PK) behavior. We hypothesized that a single dose of orally administered GAA exhibited dose-dependent PK behavior in healthy volunteers. Forty-eight young adults were enrolled in a randomized, placebo-controlled, double-blind, parallel-group trial to receive single oral doses of GAA (1.2, 2.4, and 4.8 g) or a placebo. Pharmacokinetic metrics for plasma GAA and creatine were assessed immediately before (0 hours) and at 1, 2, 4, 6, 8, 12, and 24 hours after GAA ingestion. The lag time appeared to be similar after the bolus ingestion of GAA (0.14 ± 0.17 hours for low-dose GAA, 0.31 ± 0.18 hours for medium-dose GAA, and 0.38 ± 0.32 hours for high-dose GAA; P = .05). An increase in the area under the concentration-time curve for plasma GAA was found for the dose range tested, with 2.4- and 9.3-fold increases in the area under the concentration-time curve for every 2-fold increase in the GAA dose (P < .0001). No differences were found for elimination half-time between the low-dose and medium-dose groups (<1.75 hours), whereas the elimination half-time was significantly longer (>2.1 hours) for the high-dose GAA regimen (P = .001). The volume of distribution was affected by the dosage of GAA applied (102.6 ± 17.3 L for low-dose GAA, 97.5 ± 15.7 L for medium-dose GAA, and 61.1 ± 12.7 L for high-dose GAA; P < .0001). Ingestion of GAA elevated plasma creatine by 80%, 116%, and 293% compared with the placebo for the 1.2, 2.4, and 4.8 g doses, respectively (P < .0001). Guanidinoacetic acid single-dose PK metrics were nonlinear with respect to dose size. Across the dose range of 1.2 to 4.8 g, systemic exposure to GAA increased in a greater than dose-proportional manner. PMID:25622538

  18. Enhanced annealing of GaAs solar cell radiation damage

    NASA Technical Reports Server (NTRS)

    Loo, R.; Knechtli, R. C.; Kamath, G. S.

    1981-01-01

    Solar cells are degraded by radiation damage in space. Investigations have been conducted concerning possibilities for annealing this radiation damage in GaAs solar cells, taking into account the conditions favoring such annealing. It has been found that continuous annealing as well as the combination of injection annealing with thermal annealing can lead to recovery from radiation damage under particularly favorable conditions in GaAs solar cells. The damage caused by both electrons and protons in GaAs solar cells can be substantially reduced by annealing at temperatures as low as 150 C, under appropriate conditions. This possibility makes the GaAs solar cells especially attractive for long space missions, or for missions in severe radiation environments. Attention is given to results concerning periodic thermal annealing, continuous annealing, and injection annealing combined with thermal annealing.

  19. Simulation of silicon diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Saad, A. M.; Velichko, O. I.

    2011-03-01

    The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirm the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs.

  20. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  1. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  2. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  3. Enzyme analysis for Pompe disease in leukocytes; superior results with natural substrate compared with artificial substrates.

    PubMed

    van Diggelen, O P; Oemardien, L F; van der Beek, N A M E; Kroos, M A; Wind, H K; Voznyi, Y V; Burke, D; Jackson, M; Winchester, B G; Reuser, A J J

    2009-06-01

    Enzyme analysis for Pompe disease in leukocytes has been greatly improved by the introduction of acarbose, a powerful inhibitor of interfering alpha-glucosidases, which are present in granulocytes but not in lymphocytes. Here we show that the application of acarbose in the enzymatic assay employing the artificial substrate 4-methylumbelliferyl-alpha-D: -glucoside (MU-alphaGlc) is insufficient to clearly distinguish patients from healthy individuals in all cases. Also, the ratios of the activities without/with acarbose only marginally discriminated Pompe patients and healthy individuals. By contrast, when the natural substrate glycogen is used, the activity in leukocytes from patients (n = 82) with Pompe disease is at most 17% of the lowest control value. The use of artificial substrate in an assay with isolated lymphocytes instead of total leukocytes is a poor alternative as blood samples older than one day invariably yield lymphocyte preparations that are contaminated with granulocytes. To diagnose Pompe disease in leukocytes we recommend the use of glycogen as substrate in the presence of acarbose. This assay unequivocally excludes Pompe disease. To also exclude pseudo-deficiency of acid alpha-glucosidase caused by the sequence change c.271G>A (p.D91N or GAA2; homozygosity in approximately 1:1000 caucasians), a second assay employing MU-alphaGlc substrate plus acarbose or DNA analysis is required. PMID:19387865

  4. Creatine Metabolism and Safety Profiles after Six-Week Oral Guanidinoacetic Acid Administration in Healthy Humans

    PubMed Central

    Ostojic, Sergej M.; Niess, Barbara; Stojanovic, Marko; Obrenovic, Milos

    2013-01-01

    Objectives; Guanidinoacetic acid (GAA) is a natural precursor of creatine, yet the potential use of GAA as a nutritional additive for restoring creatine availability in humans has been limited by unclear efficacy and safety after exogenous GAA administration. The present study evaluated the effects of orally administered GAA on serum and urinary GAA, creatine and creatinine concentration, and on the occurrence of adverse events in healthy humans. Methods and Results; Twenty-four healthy volunteers were randomized in a double-blind design to receive either GAA (2.4 grams daily) or placebo (PLA) by oral administration for 6 weeks. Clinical trial registration: www.clinicaltrials.gov, identification number NCT01133899. Serum creatine and creatinine increased significantly from before to after administration in GAA-supplemented participants (P < 0.05). The proportion of participants who reported minor side effects was 58.3% in the GAA group and 45.5% in the placebo group (P = 0.68). A few participants experienced serum creatine levels above 70 µmol/L. Conclusion; Exogenous GAA is metabolized to creatine, resulting in a significant increase of fasting serum creatine after intervention. GAA had an acceptable side-effects profile with a low incidence of biochemical abnormalities. PMID:23329885

  5. Design and fabrication of GaAs OMIST photodetector

    NASA Astrophysics Data System (ADS)

    Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

    1998-08-01

    We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

  6. Liquid encapsulated Czochralski growth of low dislocation GaAs

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Holmes, D. E.

    1982-01-01

    The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

  7. Cross-reactive immunologic material status affects treatment outcomes in Pompe disease infants.

    PubMed

    Kishnani, Priya S; Goldenberg, Paula C; DeArmey, Stephanie L; Heller, James; Benjamin, Danny; Young, Sarah; Bali, Deeksha; Smith, Sue Ann; Li, Jennifer S; Mandel, Hanna; Koeberl, Dwight; Rosenberg, Amy; Chen, Y-T

    2010-01-01

    Deficiency of acid alpha glucosidase (GAA) causes Pompe disease, which is usually fatal if onset occurs in infancy. Patients synthesize a non-functional form of GAA or are unable to form native enzyme. Enzyme replacement therapy with recombinant human GAA (rhGAA) prolongs survival in infantile Pompe patients but may be less effective in cross-reactive immunologic material (CRIM)-negative patients. We retrospectively analyzed the influence of CRIM status on outcome in 21 CRIM-positive and 11 CRIM-negative infantile Pompe patients receiving rhGAA. Patients were from the clinical setting and from clinical trials of rhGAA, were 6 months of age, were not invasively ventilated, and were treated with IV rhGAA at a cumulative or total dose of 20 or 40 mg/kg/2 weeks. Outcome measures included survival, invasive ventilator-free survival, cardiac status, gross motor development, development of antibodies to rhGAA, and levels of urinary Glc(4). Following 52 weeks of treatment, 6/11 (54.5%) CRIM-negative and 1/21 (4.8%) CRIM-positive patients were deceased or invasively ventilated (p<0.0001). By age 27.1 months, all CRIM-negative patients and 4/21 (19.0%) CRIM-positive patients were deceased or invasively ventilated. Cardiac function and gross motor development improved significantly more in the CRIM-positive group. IgG antibodies to rhGAA developed earlier and serotiters were higher and more sustained in the CRIM-negative group. CRIM-negative status predicted reduced overall survival and invasive ventilator-free survival and poorer clinical outcomes in infants with Pompe disease treated with rhGAA. The effect of CRIM status on outcome appears to be mediated by antibody responses to the exogenous protein. PMID:19775921

  8. Cross-reactive immunologic material status affects treatment outcomes in Pompe disease infants

    PubMed Central

    Kishnani, Priya S.; Goldenberg, Paula C.; DeArmey, Stephanie L.; Heller, James; Benjamin, Danny; Young, Sarah; Bali, Deeksha; Smith, Sue Ann; Li, Jennifer S.; Mandel, Hanna; Koeberl, Dwight; Rosenberg, Amy; Chen, Y-T

    2013-01-01

    Deficiency of acid alpha glucosidase (GAA) causes Pompe disease, which is usually fatal if onset occurs in infancy. Patients synthesize a non-functional form of GAA or are unable to form native enzyme. Enzyme replacement therapy with recombinant human GAA (rhGAA) prolongs survival in infantile Pompe patients but may be less effective in cross-reactive immunologic material (CRIM)-negative patients. We retrospectively analyzed the influence of CRIM status on outcome in 21 CRIM-positive and 11 CRIM-negative infantile Pompe patients receiving rhGAA. Patients were from the clinical setting and from clinical trials of rhGAA, were ≤6 months of age, were not invasively ventilated, and were treated with IV rhGAA at a cumulative or total dose of 20 or 40 mg/kg/2 weeks. Outcome measures included survival, invasive ventilator-free survival, cardiac status, gross motor development, development of antibodies to rhGAA, and levels of urinary Glc4. Following 52 weeks of treatment, 6/11 (54.5%) CRIM-negative and 1/21 (4.8%) CRIM-positive patients were deceased or invasively ventilated (p < 0.0001). By age 27.1 months, all CRIM-negative patients and 4/21 (19.0%) CRIM-positive patients were deceased or invasively ventilated. Cardiac function and gross motor development improved significantly more in the CRIM-positive group. IgG antibodies to rhGAA developed earlier and serotiters were higher and more sustained in the CRIM-negative group. CRIM-negative status predicted reduced overall survival and invasive ventilator-free survival and poorer clinical outcomes in infants with Pompe disease treated with rhGAA. The effect of CRIM status on outcome appears to be mediated by antibody responses to the exogenous protein. PMID:19775921

  9. Digestibility and metabolism of dietary guanidino acetic acid fed to broilers.

    PubMed

    Tossenberger, J; Rademacher, M; Németh, K; Halas, V; Lemme, A

    2016-09-01

    In two feeding experiments the retention of supplemental guanidine acetic acid (GAA) in broilers was investigated. In both experiments, the same three treatments were used; the basal feed was supplemented with 0, 0.6, or 6.0 g GAA per kg of feed. While in a growth study (experiment 1) day-old, male Ross 308 broilers were fed diets for 35 days, these diets were fed for only 8 days to fistulated broilers 34 days of age in a balance study (experiment 2). Feeding 0.6 g/kg GAA did not improve growth performance whereas 6.0 g/kg GAA resulted in a reduction of feed consumption and consequently of weight gain (P ≤ 0.05). Feed conversion was not affected and was 1.48 to 1.49 in all treatments. Increasing levels of dietary GAA gradually increased the creatine concentration in breast muscle and liver tissues (P ≤ 0.05) indicating a transformation and retention of dietary GAA as creatine. In experiment 2 the non-supplemented basal diet allowed us to determine the endogenous GAA, creatine, and creatinine excretions. Accordingly, only small amounts of these metabolites were recovered in feces while they were much higher in urine. Increasing dietary GAA intake increased fecal and renal GAA, creatine, and creatinine excretion and was significant (P ≤ 0.05) at 6.0 g/kg dietary GAA compared to no or 0.6 g/kg GAA supplementation. The mean true fecal digestibility of GAA (99%) was unaffected by the level of supplemental GAA. Considering renal GAA excretions, true availability of supplemental GAA was reduced with increasing dose (83% vs. 71%; P ≤ 0.05). Taking into account creatine and creatinine excretions above those of the basal diet, as they are a consequence of increasing dietary supply, true availability of supplemental GAA shrank from 76% (0.6 g/kg GAA) to 46% (6.0 g/kg GAA; P ≤ 0.05). Changes in blood creatine and creatinine levels reflected the changes observed in the liver and muscle tissues and may suggest increased transport to excretion organs. Data from these

  10. Phononic Crystal Waveguiding in GaAs

    NASA Astrophysics Data System (ADS)

    Azodi Aval, Golnaz

    Compared to the much more common photonic crystals that are used to manipulate light, phononic crystals (PnCs) with inclusions in a lattice can be used to manipulate sound. While trying to propagate in a periodically structured media, acoustic waves may experience geometries in which propagation forward is totally forbidden. Furthermore, defects in the periodicity can be used to confine acoustic waves to follow complicated routes on a wavelength scale. Using advanced fabrication methods, we aim to implement these structures to control surface acoustic wave (SAW) propagation on the piezoelectric surface and eventually interact SAWs with quantum structures. To investigate the interaction of SAWs with periodic elastic structures, SAW interdigital transducers (IDTs) and PnC fabrication procedures were developed. GaAs is chosen as a piezoelectric substrate for SAWs propagation. Lift-off photolithography processes were used to fabricate IDTs with finger widths as low as 1.5 microns. PnCs are periodic structures of shallow air holes created in GaAs substrate by means of a wet-etching process. The PnCs are square lattices with lattice constants of 8 and 4 microns. To predict the behavior of a SAW when interacting with the PnC structures, an FDTD simulator was used to calculate the band structures and SAW wave displacement on the crystal surface. The bandgap (BG) predicted for the 8 micron crystal ranges from 180 MHz to 220 MHz. Simulations show a shift in the BG position for 4 microns crystals ranging from 391 to 439 MHz. Two main waveguide geometries were considered in this work: a simple line waveguide and a funneling entrance line waveguide. Simulations indicated an increase in acoustic power density for the funneling waveguides. Fabricated device evaluated with electrical measurements. In addition, a scanning Sagnac interferometer is used to map the energy density of the SAWs. The Sagnac interferometer is designed to measure the outward displacement of a surface due to

  11. Autophagy and Mis-targeting of Therapeutic Enzyme in Skeletal Muscle in Pompe Disease

    PubMed Central

    Fukuda, Tokiko; Ahearn, Meghan; Roberts, Ashley; Mattaliano, Robert J.; Zaal, Kristien; Ralston, Evelyn; Plotz, Paul H.; Raben, Nina

    2009-01-01

    Enzyme replacement therapy (ERT) became a reality for patients with Pompe disease, a fatal cardiomyopathy and skeletal muscle myopathy caused by a deficiency of glycogen-degrading lysosomal enzyme acid alpha-glucosidase (GAA). The therapy, which relies on receptor-mediated endocytosis of recombinant human GAA (rhGAA), appears to be effective in cardiac muscle, but less so in skeletal muscle. We have previously shown a profound disturbance of the lysosomal degradative pathway (autophagy) in therapy-resistant muscle of GAA knockout mice (KO). Our findings here demonstrate a progressive age-dependent autophagic build-up in addition to enlargement of glycogen-filled lysosomes in multiple muscle groups in the KO. Trafficking and processing of the therapeutic enzyme along the endocytic pathway appear to be affected by the autophagy. Confocal microscopy of live single muscle fibers exposed to fluorescently labeled rhGAA indicates that a significant portion of the endocytosed enzyme in the KO was trapped as a partially processed form in the autophagic areas instead of reaching its target – the lysosomes. A fluid-phase endocytic marker was similarly mis-targeted and accumulated in vesicular structures within the autophagic areas. These findings may explain why ERT often falls short of reversing the disease process, and point to new avenues for the development of pharmacological intervention. PMID:17008131

  12. Polycrystal GaAs infrared windows

    NASA Astrophysics Data System (ADS)

    Wada, Hideo; Shibata, Ken-ichiro; Yamashita, Masashi; Nakayama, Shigeru; Fujii, Akihito

    2001-09-01

    There are difficult points such as lowering of the detection or recognition capability of some targets by aerodynamic heating with speedup of the aircraft and missile and restriction of the operation by the raindrop in rainfall time on the conventional ZnS infrared window application used for missile seeker and FLIR equipment. Therefore, in this study, the promising polycrystal GaAs which has low infrared radiations in high temperature was produced using HB method (Horizontal Boat method) and VG method (Vertical Boat method) as a new infrared window material expected the durability for rain erosion. As the result, 70mm2 windows by the HB method and 100mm diameter windows by VB method were realized. Moreover, their optical characteristics, mechanical properties and thermal shock durabilities were measured and they were confirmed to be about 56% in average transmittance in the wavelength of 10micrometers bands, 530~630kg/mm2 in their hardness and thermostable at 300 degree(s)C.

  13. Spectroscopy of GaAs quantum wells

    SciTech Connect

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  14. Confinement in thickness-controlled GaAs polytype nanodots.

    PubMed

    Vainorius, Neimantas; Lehmann, Sebastian; Jacobsson, Daniel; Samuelson, Lars; Dick, Kimberly A; Pistol, Mats-Erik

    2015-04-01

    Polytype nanodots are arguably the simplest nanodots than can be made, but their technological control was, up to now, challenging. We have developed a technique to produce nanowires containing exactly one polytype nanodot in GaAs with thickness control. These nanodots have been investigated by photoluminescence, which has been cross-correlated with transmission electron microscopy. We find that short (4-20 nm) zincblende GaAs segments/dots in wurtzite GaAs confine electrons and that the inverse system confines holes. By varying the thickness of the nanodots we find strong quantum confinement effects which allows us to extract the effective mass of the carriers. The holes at the top of the valence band have an effective mass of approximately 0.45 m0 in wurtzite GaAs. The thinnest wurtzite nanodot corresponds to a twin plane in zincblende GaAs and gives efficient photoluminescence. It binds an exciton with a binding energy of roughly 50 meV, including central cell corrections. PMID:25761051

  15. γ-Aminobutyric Acid Transporter 2 Mediates the Hepatic Uptake of Guanidinoacetate, the Creatine Biosynthetic Precursor, in Rats

    PubMed Central

    Tachikawa, Masanori; Ikeda, Saori; Fujinawa, Jun; Hirose, Shirou; Akanuma, Shin-ichi; Hosoya, Ken-ichi

    2012-01-01

    Guanidinoacetic acid (GAA) is the biosynthetic precursor of creatine which is involved in storage and transmission of phosphate-bound energy. Hepatocytes readily convert GAA to creatine, raising the possibility that the active uptake of GAA by hepatocytes is a regulatory factor. The purpose of this study is to investigate and identify the transporter responsible for GAA uptake by hepatocytes. The characteristics of [14C]GAA uptake by hepatocytes were elucidated using the in vivo liver uptake method, freshly isolated rat hepatocytes, an expression system of Xenopus laevis oocytes, gene knockdown, and an immunohistochemical technique. In vivo injection of [14C]GAA into the rat femoral vein and portal vein results in the rapid uptake of [14C]GAA by the liver. The uptake was markedly inhibited by γ-aminobutyric acid (GABA) and nipecotinic acid, an inhibitor of GABA transporters (GATs). The characteristics of Na+- and Cl−-dependent [14C]GAA uptake by freshly isolated rat hepatocytes were consistent with those of GAT2. The Km value of the GAA uptake (134 µM) was close to that of GAT2-mediated GAA transport (78.9 µM). GABA caused a marked inhibition with an IC50 value of 8.81 µM. The [14C]GAA uptake exhibited a significant reduction corresponding to the reduction in GAT2 protein expression. GAT2 was localized on the sinusoidal membrane of the hepatocytes predominantly in the periportal region. This distribution pattern was consistent with that of the creatine biosynthetic enzyme, S-adenosylmethionine∶guanidinoacetate N-methyltransferase. GAT2 makes a major contribution to the sinusoidal GAA uptake by periportal hepatocytes, thus regulating creatine biosynthesis in the liver. PMID:22384273

  16. γ-Aminobutyric acid transporter 2 mediates the hepatic uptake of guanidinoacetate, the creatine biosynthetic precursor, in rats.

    PubMed

    Tachikawa, Masanori; Ikeda, Saori; Fujinawa, Jun; Hirose, Shirou; Akanuma, Shin-ichi; Hosoya, Ken-ichi

    2012-01-01

    Guanidinoacetic acid (GAA) is the biosynthetic precursor of creatine which is involved in storage and transmission of phosphate-bound energy. Hepatocytes readily convert GAA to creatine, raising the possibility that the active uptake of GAA by hepatocytes is a regulatory factor. The purpose of this study is to investigate and identify the transporter responsible for GAA uptake by hepatocytes. The characteristics of [(14)C]GAA uptake by hepatocytes were elucidated using the in vivo liver uptake method, freshly isolated rat hepatocytes, an expression system of Xenopus laevis oocytes, gene knockdown, and an immunohistochemical technique. In vivo injection of [(14)C]GAA into the rat femoral vein and portal vein results in the rapid uptake of [(14)C]GAA by the liver. The uptake was markedly inhibited by γ-aminobutyric acid (GABA) and nipecotinic acid, an inhibitor of GABA transporters (GATs). The characteristics of Na(+)- and Cl(-)-dependent [(14)C]GAA uptake by freshly isolated rat hepatocytes were consistent with those of GAT2. The Km value of the GAA uptake (134 µM) was close to that of GAT2-mediated GAA transport (78.9 µM). GABA caused a marked inhibition with an IC(50) value of 8.81 µM. The [(14)C]GAA uptake exhibited a significant reduction corresponding to the reduction in GAT2 protein expression. GAT2 was localized on the sinusoidal membrane of the hepatocytes predominantly in the periportal region. This distribution pattern was consistent with that of the creatine biosynthetic enzyme, S-adenosylmethionine:guanidinoacetate N-methyltransferase. GAT2 makes a major contribution to the sinusoidal GAA uptake by periportal hepatocytes, thus regulating creatine biosynthesis in the liver. PMID:22384273

  17. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 8 2010-10-01 2010-10-01 false Operation under current GAA/MSTS Southeast Asia Program... AUTHORITY VOYAGE DATA Sec. 7 Operation under current GAA/MSTS Southeast Asia Program. In order to adapt the provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast...

  18. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1–90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  19. Recent developments in GaAs solar cells

    SciTech Connect

    Kamath, G.S.

    1983-08-01

    The higher efficiency, radiation hardness and greater survivability at higher temperatures give GaAs cells a distinct advantage in space applications over silicon cells. Recent progress in fabrication technology has demonstrated the feasibility of high yield mass production of GaAs cells at a cost low enough to warrant their use in satellite power systems. Small panels have been assembled for several preliminary flight tests with encouraging results. Additional developments in concentrator cells as well as in all (AlGa)As cells for future systems such as cascade cells are reviewed. The (AlGa)As cells, in combination with silicon or GaAs cells, could lead to a multijunction cell with an efficiency 50% higher than any single junction cell.

  20. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  1. Unpinned GaAs MOS capacitors and transistors

    NASA Astrophysics Data System (ADS)

    Tiwari, Sandip; Wright, Steven L.; Batey, John

    1988-09-01

    Metal-oxide-semiconductor (MOS) capacitors and field-effect transistors (MOSFETs) in the GaAs semiconductor system using an unpinned interface are described. The structures utilize plasma-enhanced chemical-vapor deposition (PECVD) for the silicon-dioxide insulator on GaAs that has been terminated with a few monolayers of silicon during growth by molecular beam epitaxy. Interface densities in the structures have been reduced to about 10 to the 12th/sq cm-eV. High-frequency characteristics indicate strong inversion of both p-type and n-type GaAs. The excellent insulating quality of the oxide has allowed demonstration of quasi-static characteristics. MOSFETs operating in depletion mode with a transconductance of 60 mS/mm at 8.0-micron gate lengths have been fabricated.

  2. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  3. Characterization of production GaAs solar cells for space

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1988-01-01

    The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.

  4. Nonstoichiometric Low-Temperature Grown GaAs Nanowires.

    PubMed

    Díaz Álvarez, Adrian; Xu, Tao; Tütüncüoglu, Gözde; Demonchaux, Thomas; Nys, Jean-Philippe; Berthe, Maxime; Matteini, Federico; Potts, Heidi A; Troadec, David; Patriarche, Gilles; Lampin, Jean-François; Coinon, Christophe; Fontcuberta i Morral, Anna; Dunin-Borkowski, Rafal E; Ebert, Philipp; Grandidier, Bruno

    2015-10-14

    The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump-probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires. PMID:26339987

  5. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  6. Characterization of production GaAs solar cells for space

    SciTech Connect

    Anspaugh, B.E.

    1988-12-01

    The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.

  7. Interface demarcation in GaAs by current pulsing

    NASA Technical Reports Server (NTRS)

    Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

    1990-01-01

    GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

  8. Temperature dependence of optical properties of GaAs

    NASA Technical Reports Server (NTRS)

    Yao, Huade; Snyder, Paul G.; Woollam, John A.

    1991-01-01

    The effect of temperature on the optical properties of GaAs was investigated using spectroscopic ellipsometry measurements, between room temperature and about 610 C in increments of 50 C, of pseudodielectric functions and related optical constants of GaAs. A quantitative analysis of the pseudodielectric function spectrum was carried out using a harmonic-oscillator approximation (HOA) to fit the measured dielectric functions. Good fits were obtained with this model, which provides a convenient means of reproducing the GaAs dielectric function at any temperature, by using the temperature-dependent oscillator parameters. The HOA analysis also provides information about band-gap variation with temperature. Using the measured optical constants at a number of fixed temperatures, an algorithm was developed for computing the dielectric function spectrum at an arbitrary temperature in the range 22-610 C.

  9. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Zwerdling, S.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

  10. MBE Growth of GaAs Whiskers on Si Nanowires

    SciTech Connect

    Maxwell Andrews, Aaron

    2010-01-04

    We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

  11. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H.; Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V.; Katzenstein, A. L.; Sofferman, D. L.; Goldman, R. S.

    2013-09-02

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  12. GaAs MMICs for EHF SATCOM ground terminals

    NASA Astrophysics Data System (ADS)

    Hampel, Daniel; Upton, Alastair

    The authors address the potential use of GaAs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monoltihic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high-efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.

  13. Defect interactions in GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

  14. GaAs laser diode pumped Nd:YAG laser

    NASA Technical Reports Server (NTRS)

    Conant, L. C.; Reno, C. W.

    1974-01-01

    A 1.5-mm by 3-cm neodymium-ion doped YAG laser rod has been side pumped using a GaAs laser diode array tuned to the 8680-A absorption line, achieving a multimode average output power of 120 mW for a total input power of 20 W to the final-stage laser diode drivers. The pumped arrangement was designed to take advantage of the high brightness of a conventional GaAs array as a linear source by introducing the pump light through a slit into a close-wrapped gold coated pump cavity. This cavity forms an integrating chamber for the pump light.

  15. GaAs solar cells with V-grooved emitters

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Fatemi, N.; Wilt, D. M.; Landis, G. A.; Thomas, R. D.

    1989-01-01

    A GaAs solar cell with a V-grooved front surface is described. It shows improved optical coupling and higher short-circuit current compared to planar cells. The GaAs homojunction cells, manufactured by OrganoMetallic Chemical Vapor Deposition (OMCVD), are described. The V-grooves were formed by anisotropic etching. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

  16. Investigation of high efficiency GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

    1989-01-01

    Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

  17. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  18. Epitaxial EuO thin films on GaAs

    SciTech Connect

    Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K.; Mack, S.; Awschalom, D. D.

    2010-09-13

    We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

  19. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  20. Modelling of interband transitions in GaAs tunnel diode

    NASA Astrophysics Data System (ADS)

    Louarn, K.; Fontaine, C.; Arnoult, A.; Olivié, F.; Lacoste, G.; Piquemal, F.; Bounouh, A.; Almuneau, G.

    2016-06-01

    In this paper, an improved model for non-local band-to-band tunneling carrier transport is presented and compared to experimental measurement from GaAs tunnel junctions devices. By carefully taking into account the coupling between the conduction band and the light holes valence band, the model is able to predict, with realistic material parameters, the amplitude of the current density throughout the whole tunneling regime. The model suggests that elastic band-to-band tunneling instead of trap-assisted-tunneling is the predominant mechanism in GaAs tunnel junctions, which is of great interest for better understanding and improving III–V multi-junction solar cells.

  1. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  2. Development of bulk GaAs room temperature radiation detectors

    SciTech Connect

    McGregor, D.S.; Knoll, G.F. . Dept. of Nuclear Engineering); Eisen, Y. . Soreq Nuclear Research Center); Brake, R. )

    1992-10-01

    This paper reports on GaAs, a wide band gap semiconductor with potential use as a room temperature radiation detector. Various configurations of Schottky diode detectors were fabricated with bulk crystals of liquid encapsulated Czochralski (LEC) semi-insulating undoped GaAs material. Basic detector construction utilized one Ti/Au Schottky contact and one Au/Ge/Ni alloyed ohmic contact. Pulsed X-ray analysis indicated pulse decay times dependent on bias voltage. Pulse height analysis disclosed non-uniform electric field distributions across the detectors tentatively explained as a consequence of native deep level donors (EL2) in the crystal.

  3. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  4. Photoluminescence of Si-doped GaAs epitaxial layers

    SciTech Connect

    Yaremenko, N. G. Karachevtseva, M. V.; Strakhov, V. A.; Galiev, G. B.; Mokerov, V. G.

    2008-12-15

    The effect of arsenic pressure on the amphoteric behavior of Si during the growth of the Si-doped (100)-, (111)Ga-, and (111)As-oriented GaAs layers is studied by photoluminescence spectroscopy. The edge luminescence band is examined, and the concentration and the degree of compensation as functions of the arsenic pressure are determined. Nonstoichiometry defects in GaAs layers grown with a deficit and an excess of arsenic are studied. It is shown that the defects formed in the (111)Ga- and (111)As-oriented layers are different in nature.

  5. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.

    2015-02-01

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.

  6. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  7. Distinct disease phenotypes linked to different combinations of GAA mutations in a large late-onset GSDII sibship

    PubMed Central

    2013-01-01

    Background Glycogenosis type II (GSDII or Pompe disease) is an autosomal recessive disease, often characterized by a progressive accumulation of glycogen within lysosomes caused by a deficiency of α-1,4-glucosidase (GAA; acid maltase), a key enzyme of the glycogen degradation pathway. To date, more than 326 different mutations in the GAA gene have been identified in patients with GSDII but the course of the disease is difficult to be predicted on the basis of molecular genetic changes. Studies on large informative families are advisable to better define how genetics and non genetics factors like exercise and diet may influence the clinical phenotype. Methods and results In this study, we report on clinical, instrumental, and pathological features as well as on molecular analysis of a family with 10 out of 13 siblings affected by late-onset Pompe disease. Three mutations segregated in the family, two of which are novel mutations. Siblings showing a more severe phenotype were compound heterozygous for c.118C > T [p.R40X] and c.2647-7G > A [p.N882fs] on GAA, whereas, two patients showing a mild phenotype were compound heterozygous c.2647-7G > A [p.N882fs] and c.2276G > C [p.G759A] mutations. Quantitative expression analysis showed, in the patients carrying p.R40X/ p.N882fs, a significant (p 0.01) correlation between the levels of expression of the mutated allele and the age at onset of the disease. Conclusions As far as we know, this is the largest informative family with late-onset Pompe disease described in the literature showing a peculiar complex set of mutations of GAA gene that may partially elucidate the clinical heterogeneity of this family. PMID:24107549

  8. Alkaptonuria and pompe disease in one patient: metabolic and molecular analysis

    PubMed Central

    Habbal, Mohammad Zouheir; Bou Assi, Tarek; Mansour, Hicham

    2013-01-01

    Pompe disease is characterised by deficiency of acid α-glucosidase that results in abnormal glycogen deposition in the muscles. Alkaptonuria is caused by a defect in the enzyme homogentisate 1,2-dioxygenase with subsequent accumulation of homogentisic acid. We report the case of a 6-year-old boy diagnosed with Pompe disease and alkaptonuria. Urine organic acids and α-glucosidase were measured. Homogentisate 1,2-dioxygenase (HGO) and acid alpha-glucosidase (GAA) genes were sequenced by Sanger DNA sequencing. The level of α-glucosidase in white blood cells was markedly decreased (4 nm/mg) while the level of homogentisic acid was markedly increased (15 027 mmol/mol creatine). GAA sequencing detected two heterozygous GAA mutations (C.670C>T and C.1064T>C) while HGO sequencing revealed three polymorphisms in exons 4, 5 and 6, respectively. To the best of our knowledge, this is the first reported instance of Pompe disease and alkaptonuria occurring in the same individual. PMID:23632174

  9. Present status of GaAs. [including space processing and solid state applications

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Jastrzebski, L.

    1979-01-01

    An extensive literature survey on GaAs was carried out for the period December 31, 1970, to December 31, 1977. The increasing interest in GaAs device structures increased steadily during that period. The leading research and development centers and the specific areas of interest were identified. A workshop on GaAs was held in November 1977 to assess the present status of melt-grown GaAs and the existing needs for reliable chemical, structural, and electronic characterization methods. It was concluded that the present available bulk GaAs crystals are of poor quality and that GaAs technology is lagging demonstrated or potentially feasible GaAs devices and systems.

  10. Use of ZnSe as an interlayer for GaAs growth on Si

    NASA Astrophysics Data System (ADS)

    Bringans, R. D.; Biegelsen, D. K.; Swartz, L.-E.; Ponce, F. A.; Tramontana, J. C.

    1992-07-01

    ZnSe has been used as an interlayer between Si substrates and GaAs layers in molecular beam epitaxial growth of GaAs on Si. It is found that thin GaAs layers are much more uniform and have fewer defects when grown on ZnSe interlayers than when they are grown directly on Si. The growth of GaAs on ZnSe is much more difficult than the more usual reverse sequence, and different growth modes for the epitaxy of GaAs on ZnSe are compared. Deposition of GaAs on ZnSe at room temperature followed by solid phase regrowth led to an epitaxial layer plus a polycrystalline layer. A slow ramping of the substrate temperature during the GaAs epitaxial growth was found to give the best crystal quality.

  11. Dietary eritadenine suppresses guanidinoacetic Acid-induced hyperhomocysteinemia in rats.

    PubMed

    Fukada, Shin-ichiro; Setoue, Minoru; Morita, Tatsuya; Sugiyama, Kimio

    2006-11-01

    We assessed the effect of eritadenine, a hypocholesterolemic factor isolated from the edible mushroom Lentinus edodes, on plasma homocysteine concentration using methyl-group acceptor-induced hyperhomocysteinemic rats. Male Wistar rats were fed a control diet or diets supplemented with a methyl-group acceptor or a precursor of methyl-group acceptor. Diets were supplemented with guanidinoacetic acid (GAA) at 2.5, 5, 7.5, and 10 g/kg, nicotinic acid (NiA) or ethanolamine (EA) at 5 and 10 g/kg, or glycine at 25 and 50 g/kg, and the rats were fed for 10 d (Expt. 1). Plasma total homocysteine concentration was increased 255 and 421% by 5 and 10 g/kg GAA, respectively, and 39 and 58% by 5 and 10 g/kg NiA, respectively, but not by EA or glycine. GAA supplementation dose-dependently decreased the hepatic S-adenosylmethionine (SAM) concentration and the activity of cystathionine beta-synthase (CBS) and increased the hepatic S-adenosylhomocysteine (SAH) and homocysteine concentrations. In another study in which rats were fed 5 g/kg GAA-supplemented diet for 1-10 d, plasma homocysteine and the other variables affected in Expt. 1 were affected in rats fed the GAA-supplemented diet (Expt. 2). We investigated the effect of supplementation of 5 g/kg GAA-supplemented diet with eritadenine (50 mg/kg) on plasma homocysteine concentration (Expt. 3). Eritadenine supplementation significantly suppressed the GAA-induced increase in plasma homocysteine concentration. Eritadenine also restored the decreased SAM concentration and CBS activity in the liver, whereas it further increased hepatic SAH concentration, suggesting that eritadenine might elicit its effect by both slowing homocysteine production and increasing cystathionine formation. The results confirm that GAA is a useful compound to induce experimental hyperhomocysteinemia and indicate that eritadenine can effectively counteract the hyperhomocysteinemic effect of GAA. PMID:17056803

  12. Measuring Carrier Lifetime in GaAs by Luminescence

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1986-01-01

    Luminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.

  13. The 20 GHz power GaAs FET development

    NASA Technical Reports Server (NTRS)

    Crandell, M.

    1986-01-01

    The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

  14. The surface chemistry of GaAs atomic layer epitaxy

    SciTech Connect

    Creighton, J.R.; Banse, B.A.

    1991-01-01

    In this paper we review three proposed mechanisms for GaAs ALE and review or present data support or contradiction of these mechanisms. Surface chemistry results clearly demonstrated that TMGa irreversibly chemisorbs on the Ga-rich GaAs(100) surface. The reactive sticking coefficient (RSC) of TMGa on the adsorbate-free Ga-rich GaAs(100) surface was measured to be {approximately}0.5, conclusively demonstrating that the selective adsorption'' mechanism of ALE is not valid. We describe kinetic evidence for methyl radical desorption in support of the adsorbate inhibition'' mechanism. The methyl radical desorption rates determined by temperature programmed desorption (TPD) demonstrate that desorption is at least a factor of {approximately}10 faster from the As-rich c(2 {times} 8)/(2 {times} 4) surface than from the Ga-rich surface. It is disparity in CH{sub 3} desorption rates between the As-rich and Ga-rich surfaces that is largely responsible for GaAs ALE behavior. A gallium alkyl radical (e.g. MMGa) is also observed during TPD and molecular beam experiments, in partial support of the flux balance'' mechanism. Stoichiometry issues of ALE are also discussed. We have discovered that arsine exposures typical of atmospheric pressure and reduced pressure ALE lead to As coverages {ge} 1 ML, which provides the likely solution to the stoichiometry question regarding the arsine cycle. 32 refs., 6 figs.

  15. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  16. GaAs MESFET with lateral non-uniform doping

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    An analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for linear lateral doping profile are given as a special case. Theoretical considerations predict that better device linearity and improved F(T) can be obtained by using linear lateral doping when doping density increases from source to drain.

  17. Gallium arsenide (GaAs) power conversion concept

    NASA Technical Reports Server (NTRS)

    Nussberger, A. A.

    1980-01-01

    A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

  18. V-Grooved GaAs Solar Cell

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Landis, G. R.; Wilt, D. M.; Thomas, R. D.; Arrison, A.; Fatemi, N. S.

    1991-01-01

    V-grooved GaAs solar photovoltaic cells increase optical coupling and greater conversion of light into electricity. Increases both trapping of incident light and lengths of optical paths in cell material. Net effect increases in total absorptivity, tolerance to damage by energetic particles, and short-circuit current. These improvements expected to follow from similar improvements obtained in silicon solar cells.

  19. ZnSe Films in GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Kachare, Ram H.

    1987-01-01

    ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.

  20. High purity, low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1983-01-01

    Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

  1. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  2. Immunomodulatory gene therapy prevents antibody formation and lethal hypersensitivity reactions in murine pompe disease.

    PubMed

    Sun, Baodong; Kulis, Michael D; Young, Sarah P; Hobeika, Amy C; Li, Songtao; Bird, Andrew; Zhang, Haoyue; Li, Yifan; Clay, Timothy M; Burks, Wesley; Kishnani, Priya S; Koeberl, Dwight D

    2010-02-01

    Infantile Pompe disease progresses to a lethal cardiomyopathy in absence of effective treatment. Enzyme-replacement therapy (ERT) with recombinant human acid alpha-glucosidase (rhGAA) has been effective in most patients with Pompe disease, but efficacy was reduced by high-titer antibody responses. Immunomodulatory gene therapy with a low dose adeno-associated virus (AAV) vector (2 x 10(10) particles) containing a liver-specific regulatory cassette significantly lowered immunoglobin G (IgG), IgG1, and IgE antibodies to GAA in Pompe disease mice, when compared with mock-treated mice (P < 0.05). AAV-LSPhGAApA had the same effect on GAA-antibody production whether it was given prior to, following, or simultaneously with the initial GAA injection. Mice given AAV-LSPhGAApA had significantly less decrease in body temperature (P < 0.001) and lower anaphylactic scores (P < 0.01) following the GAA challenge. Mouse mast cell protease-1 (MMCP-1) followed the pattern associated with hypersensitivity reactions (P < 0.05). Regulatory T cells (Treg) were demonstrated to play a role in the tolerance induced by gene therapy as depletion of Treg led to an increase in GAA-specific IgG (P < 0.001). Treg depleted mice were challenged with GAA and had significantly stronger allergic reactions than mice given gene therapy without subsequent Treg depletion (temperature: P < 0.01; symptoms: P < 0.05). Ubiquitous GAA expression failed to prevent antibody formation. Thus, immunomodulatory gene therapy could provide adjunctive therapy in lysosomal storage disorders treated by enzyme replacement. PMID:19690517

  3. Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

    SciTech Connect

    Falcão, B. P. Leitão, J. P.; Correia, M. R.; Soares, M. R.; Morales, F. M.; Mánuel, J. M.; Garcia, R.; Gustafsson, A.; Moreira, M. V. B.; Oliveira, A. G. de; González, J. C.

    2013-11-14

    We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111)B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111)B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40–1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer. However, no direct evidence for a Mg related emission is found for the nanowires. The excitation power dependency on both peak energy and intensity of the photoluminescence gives a clear evidence for the type II nature of the radiative transitions. From the temperature dependence on the photoluminescence intensity, non-radiative de-excitation channels with different activation energies were found. The fact that the estimated energies for the escape of the electron are higher in the nanowires grown on Si(111) suggests the presence of wider zinc-blende segments.

  4. Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

    NASA Technical Reports Server (NTRS)

    Larsen, C. A.; Buchan, N. I.; Stringfellow, G. B.

    1988-01-01

    The decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric-pressure flow system with the use of D2 to label the reaction products which are analyzed in a time-of-flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas-phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid-base adduct that forms and subsequently eliminates CH4.

  5. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation. PMID:25686555

  6. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films

    NASA Astrophysics Data System (ADS)

    Wood, Adam W.; Collar, Kristen; Li, Jincheng; Brown, April S.; Babcock, Susan E.

    2016-03-01

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs1-x Bi x using high angle annular dark field (‘Z-contrast’) imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ˜GaAs embedded in the GaAs1-x Bi x epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (˜4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ˜GaAs to GaAs1-x Bi x appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ˜25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs1-x Bi x film growth.

  7. alloy lattice-matched to GaAs: a first-principles study

    NASA Astrophysics Data System (ADS)

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-10-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1- x- y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1- x- y N x Bi y alloy with y/ x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1- x- y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1- x- y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1- x- y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1- x- y N x Bi y quaternary alloys in optoelectronic devices.

  8. Effects of dietary supplementation of meat-type quail breeders with guanidinoacetic acid on their reproductive parameters and progeny performance.

    PubMed

    Murakami, A E; Rodrigueiro, R J B; Santos, T C; Ospina-Rojas, I C; Rademacher, M

    2014-09-01

    This study was conducted to assess the effect of dietary supplementation of meat-type quail breeders with guanidinoacetic acid (GAA) on their reproductive parameters and progeny performance. Two hundred forty meat-type quails at 25 wk of age were distributed in a completely randomized design with 5 treatments and 8 replicates of 6 birds each. The treatments consisted of 5 dietary levels of GAA (0.00, 0.06, 0.12, 0.18, and 0.24%). The progenies from quail breeders were housed according to breeder treatments and fed a conventional diet based on corn and soybean meal without GAA supplementation. Dietary GAA levels did not affect (P > 0.05) the productivity of meat-type quail breeders, although the concentration of guanidinic compounds (creatine, GAA, and creatinine) in the eggs from the breeders increased linearly (P < 0.05) according to the increase in dietary GAA levels. The number of spermatozoa present in the vitelline membrane was not affected (P > 0.05) by the treatments, but there was a quadratic effect (P < 0.05) of the levels of GAA on fertility, embryonic mortality, and egg hatchability, with the best results estimated at 0.13, 0.15, and 0.14% GAA, respectively. The creatine levels of the pectoral muscle in newborn quails showed a quadratic effect (P ≤ 0.07), and the dietary GAA level of 0.11% was estimated to maximize the muscular creatine level in the progeny. There was a quadratic effect (P < 0.05) of GAA levels on weight gain and feed conversion of progeny at 35 d of age with an optimization point of 0.14% GAA for these variables. Dietary GAA supplementation of meat-type quail breeders increases the availability of creatine in eggs and muscle of progeny, which results in better reproductive parameters and better postnatal progeny performance. PMID:24974392

  9. Femtosecond pulsed laser ablation of GaAs

    NASA Astrophysics Data System (ADS)

    Trelenberg, T. W.; Dinh, L. N.; Saw, C. K.; Stuart, B. C.; Balooch, M.

    2004-01-01

    The properties of femtosecond-pulsed laser deposited GaAs nanoclusters were investigated. Nanoclusters of GaAs were produced by laser ablating a single crystal GaAs target in vacuum or in a buffer gas using a Ti-sapphire laser with a 150 fs minimum pulse length. For in-vacuum deposition, X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) revealed that the average cluster size was approximately 7 nm for laser pulse lengths between 150 fs and 25 ps. The average cluster size dropped to approximately 1.5 nm at a pulse length of 500 ps. It was also observed that film thickness decreased with increasing laser pulse length. A reflective coating, which accumulated on the laser admission window during ablation, reduced the amount of laser energy reaching the target for subsequent laser shots and developed more rapidly at longer pulse lengths. This observation indicates that non-stoichiometric (metallic) ablatants were produced more readily at longer pulse lengths. The angular distribution of ejected material about the target normal was well fitted to a bi-cosine distribution of cos 47 θ+ cos 4 θ for ablation in vacuum using 150 fs pulses. XPS and AES revealed that the vacuum-deposited films contained excess amorphous Ga or As in addition to the stoichiometric GaAs nanocrystals seen with XRD. However, films containing only the GaAs nanocrystals were produced when ablation was carried out in the presence of a buffer gas with a pressure in excess of 6.67 Pa. At buffer gas pressure on the order of 1 Torr, it was found that the stoichiometry of the ablated target was also preserved. These experiments indicate that both laser pulse length and buffer gas pressure play important roles in the formation of multi-element nanocrystals by laser ablation. The effects of gas pressure on the target's morphology and the size of the GaAs nanocrystals formed will also be discussed.

  10. Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

    1982-01-01

    Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

  11. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Lagowski, J.

    1981-01-01

    Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

  12. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  13. A V-grooved GaAs solar cell

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Fatemi, N. S.; Landis, G. A.; Wilt, D. M.; Thomas, R. D.; Arrison, A.

    1988-01-01

    V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

  14. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  15. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1989-01-01

    The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

  16. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  17. Formation and properties of porous GaAs

    SciTech Connect

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  18. GaAs arrays for X-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Owens, Alan; Andersson, Hans; Campbell, M.; Lumb, David H.; Nenonen, Seppo A. A.; Tlustos, Lukas

    2004-09-01

    We present results from our compound semiconductor laboratory program and describe the development of a large area GaAs imaging array for planetary remote sensing applications. The device is fabricated from ~150 micron thick epitaxial material, patterned into a 64 x 64 pixel array, back-thinned and contacted. It will be flip-chip bump bonded onto a custom designed, fully spectroscopic, low noise (< 20 e- rms) active pixel sensor ASIC. At present, the ASIC is still under development and so in order to validate and qualify the various technological steps, we have produced a GaAs imager based on the MEDIPIX-1 format using a MEDIPIX-1 readout chip. In X-ray tests, the device was found to work well with a bump yield of 99.9%. After flat field corrections, the spatial uniformity of the array was commensurate with Poisson noise.

  19. Single Material Band Gap Engineering in GaAs Nanowires

    SciTech Connect

    Spirkoska, D.; Abstreiter, G.; Efros, A.; Conesa-Boj, S.; Morante, J. R.; Arbiol, J.; Fontcuberta i Morral, A.

    2011-12-23

    The structural and optical properties of GaAs nanowire with mixed zinc-blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc-blende or wurtzite crystal phases. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV. The downward shift of the emission peaks can be understood by carrier confinement at the wurtzite/zinc-blende heterojunction, in quantum wells and in random short period superlattices existent in these nanowires, assuming the theoretical staggered band-offset between wurtzite and zinc-blende GaAs.

  20. Sub-additivity in Electron Emission from GaAs

    NASA Astrophysics Data System (ADS)

    Brunkow, Evan; Clayburn, Nathan; Becker, Maria; Jones, Eric; Batelaan, Herman; Gay, Timothy

    2016-05-01

    When two spatially-overlapped laser pulses (775 nm center wavelength, 75 fs duration) are incident on an untreated <100> GaAs crystal surface, the electron emission rate depends on the temporal separation between the two pulses. We have shown that for delays between 0.2 and 1000ps, the emission rate is ``sub-additive'', i.e., is lower than when the beams have separation >> 1 ns. We believe the cause of this sub-additivity is an increase in reflectance and transmittance due to electrons occupying the excited state of the GaAs. We are now able to manipulate the magnitude of the sub-additivity by changing the number of electrons that are in the excited state. Sub-additivity is not observed with tungsten tip surfaces which have no excited state. Funded by NSF PHY-1505794, EPSCoR IIIA-1430519, and NSF 1306565 (HB).

  1. GaAs solar cells for laser power beaming

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Huber, Daniel A.; Addis, F. William; Anheier, Norman; Coomes, E. P.

    1991-01-01

    Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. This work was motivated primarily by interests in space-tp-space power beaming applications. In particular, the Battelle Pacific Northwest Laboratories is conducting studies of the utilization of power beaming for several future space missions. Modeling calculations of GaAs cell performance were carried out using PC-1D to determine an appropriate design for a p/n cell structure. Epitaxial wafers were grown by MOCVD and cells fabricated at WSU Tri-Cities. Under simulated conditions, an efficiency of 53 percent was achieved for a cell coupled to 806 nm light at 400 mW/sq cm.

  2. Oxygen-enhanced wet thermal oxidation of GaAs

    NASA Astrophysics Data System (ADS)

    Bauters, J. F.; Fenlon, R. E.; Seibert, C. S.; Yuan, W.; Plunkett, J. S. B.; Li, J.; Hall, D. C.

    2011-10-01

    An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 °C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O2 added relative to the N2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of ˜2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact.

  3. Testing a GaAs cathode in SRF gun

    SciTech Connect

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  4. Experimental examination of gaas dissolution in in-p melt

    NASA Astrophysics Data System (ADS)

    Bolkhovityanov, Yu. B.; Bolkhovityanova, R. I.; Chikichev, S. I.

    1983-05-01

    The “solubility” of GaAs crystals in quaternary In-Ga-As-P liquids (X{Ga/I} = X{As/I}) has been studied experi-mentally at 770°C using seed-dissolution technique. The location of the true liquidus isotherm has been established independently by means of the direct vi-sual observation technique. Comparison between the two data sets indicates that the first method can be successfully used only for those In-Ga-As-P melt compositions which have the corresponding solid InxGa1-xAsyP1-y alloys nearly lattice-matched to the GaAs substrate. In other cases the results obtained by this method are totally misleading although in-teresting as they are. The phenomenon of “catastro-phic” substrate erosion is investigated. The results of the present study are interpreted within the conceptual framework developed previously.

  5. Government systems and GaAs monolithic components

    NASA Astrophysics Data System (ADS)

    Sieger, K. J.

    1983-12-01

    The current state of monolithic GaAs technology and its current and future applications to government systems are reviewed, with attention given to the government investment strategy, commercial market impact, new technology, and challenges from silicon technology. Data obtained from a survey to determine the status of GaAs IC technology are presented. These contain the system type and acronym, a technical description of the system, the critical research and development needed to develop the particular IC, specific applications and functions of the IC in the system, the year of implementation, and the potential chip buyer. High volume applications, with chip counts of one million and more, are identified as phased arrays (radar and communication), expendable decoys, missile seekers, and satellite signal processors. Problem areas, future trends, and areas of uncertainty are discussed.

  6. High purity low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1982-01-01

    Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

  7. A high-speed GaAs MESFET optical controller

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.; Richard, M.; Bendett, M.; Gustafson, G.

    1989-01-01

    Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

  8. Solar heating of GaAs nanowire solar cells.

    PubMed

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K. PMID:26698787

  9. SEU design consideration for MESFETs on LT GaAs

    SciTech Connect

    Weatherford, T.R.; Radice, R.; Eskins, D.

    1997-12-01

    Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

  10. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  11. On the dissolution properties of GaAs in Ga

    NASA Technical Reports Server (NTRS)

    Davidson, M. C.; Moynahan, A. H.

    1977-01-01

    The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

  12. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  13. Gallium arsenide (GaAs) solar cell modeling studies

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.

    1980-01-01

    Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

  14. Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Takehara, Yuji; Yoshimoto, Masahiro; Huang, Wei; Saraie, Junji; Oe, Kunishige; Chayahara, Akiyoshi; Horino, Yuji

    2006-01-01

    GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x=5%) and GaAs was estimated to be approximately 0.5%.

  15. Thielavins A, J and K: alpha-glucosidase inhibitors from MEXU 27095, an endophytic fungus from Hintonia latiflora

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Bioassay-guided fractionation of the bio-active organic extract obtained from solid-media culture of MEXU 27095, an endophytic fungus isolated from the Mexican medicinal plant Hintonia latiflora (Rubiaceae), led to separation of three tridepsides which were identified as thielavins A, J and K. All ...

  16. Chronic effects of an alpha-glucosidase inhibitor (Bay o 1248) on intestinal disaccharidase activity in normal and diabetic mice.

    PubMed

    Lee, S M; Bustamante, S; Flores, C; Bezerra, J; Goda, T; Koldovský, O

    1987-01-01

    Bay o 1248 is a potent alpha-glycosidase inhibitor that reduces postprandial hyperglycemia when administered p.o. with sucrose or maltose. The compound binds to and competitively inhibits the alpha-disaccharidases and is also readily absorbed across the intestinal mucosa. To evaluate its effect on the activity of disaccharidases and on metabolic control, groups of obese diabetic mice (C57BLKsJ db/db) were given the drug for periods of 3, 7 and 84 days as a drug food mixture (5 or 10 mg/100 g of food). Nondiabetic mice of the same strain were dosed for 3 and 7 days. The drug did not influence body growth, food intake or fasting blood glucose. However, urine glucose excretion was significantly decreased at the higher dose in the diabetic mice. The drug had no effect on the protein content of jejunum (proximal and middle thirds) or ileum (distal third) of the small intestine. The activity of sucrase and maltase was significantly decreased in practically all segments of the small intestine in both diabetic and nondiabetic mice. These changes were evident after 3 days of drug administration. Lactase was not affected by the drug. The mechanism underlying these changes, although unclear, is of significant interest and deserves further investigation. PMID:3100764

  17. Effect of Cadmium Ion on alpha-Glucosidase: An Inhibition Kinetics and Molecular Dynamics Simulation Integration Study.

    PubMed

    Luo, Tao; Lee, Jinhyuk; Lü, Zhi-Rong; Mu, Hang; Yue, Li-Mei; Park, Yong-Doo; Ye, Zhuo-Ming

    2016-06-01

    α-Glucosidase is a critical metabolic enzyme that produces glucose molecules by catalyzing carbohydrates. The aim of this study is to elucidate biological toxicity of Cd(2+) based on α-glucosidase activity and conformational changes. We studied Cd(2+)-mediated inactivation as well as conformational modulation of α-glucosidase by using kinetics coupled with simulation of molecular dynamics. The enzyme was significantly inactivated by Cd(2+) in a reversibly binding behavior, and Cd(2+) binding induced a non-competitive type of inhibition reaction (the K i was calculated as 0.3863 ± 0.033 mM). Cd(2+) also modulated regional denaturation of the active site pocket as well as overall partial tertiary structural change. In computational simulations using molecular dynamics, simulated introduction of Cd(2+) induced in a depletion of secondary structure by docking Cd(2+) near the saccharides degradation at the active site, suggesting that Cd(2+) modulating enzyme denaturation. The present study elucidated that the binding of Cd(2+) triggers conformational changes of α-glucosidase as well as inactivates catalytic function, and thus suggests an explanation of the deleterious effects of Cd(2+) on α-glucosidase. PMID:27145787

  18. Anti-inflammatory, free radical scavenging and alpha-glucosidase inhibitory activities of Hamelia patens and its chemical constituents.

    PubMed

    Jiménez-Suárez, Verónica; Nieto-Camacho, Antonio; Jiménez-Estrada, Manuel; Alvarado Sánchez, Brenda

    2016-09-01

    Context Hamelia patens Jacq. (Rubiaceae) is traditionally used to treat wounds, inflammation and diabetes. However, there is still a lack of scientific evidence to support these applications. Objective The objective of this study is to evaluate the anti-inflammatory, antioxidant and antidiabetic activities of Hamelia patens, and identify its bioactive compounds. Materials and methods Four extracts were obtained by maceration and liquid-liquid extraction: HEX, DCM-EtOAc, MeOH-EtOAc and MeOH-Aq. The anti-inflammatory effect was evaluated orally on rat paw carrageenan-induced oedema over 6 h (50, 200 and 500 mg/kg), and topically in mouse ear oedema induced by 12-tetradecanoylphorbol-13-acetate (TPA) after 4 h (0.5 and 1 mg/ear). We also evaluated myeloperoxidase levels in ear tissue, 2,2-diphenyl-1-picrylhydrazyl (DPPH) scavenging ability, and in vitro α-glucosidase inhibition. The chemical compounds were separated by column chromatography and identified by spectroscopic analysis. Results We found that the oral administration of the HEX extract at 500 and 200 mg/kg significantly decreased the carrageenan-induced inflammation after 1 and 3 h, respectively. The MeOH-EtOAc extract significantly inhibited myeloperoxidase activity (83.5%), followed by the DCM-EtOAc extract (76%), β-sitosterol/stigmasterol (72.7%) and the HEX extract (55%), which significantly decreased oedema induced by TPA at both doses, giving a similar effect to indomethacin. We also found that the MeOH-EtOAc, MeOH-Aq and DCM-EtOAc extracts showed good DPPH scavenging activity (IC50 values of 18.6, 93.9 and 158.2 μg/mL, respectively). The HEX extract showed the lowest α-glucosidase inhibition (an IC50 value of 26.07 μg/mL), followed by the MeOH-EtOAc extract (an IC50 value of 30.18 μg/mL), β-sitosterol/stigmasterol (IC50 34.6 μg/mL) and compound A ((6E,10E,14E,18E)-2,6,10,14,18,23-hexamethyl-2,6,10,14,18,22-tetracosahexaene, an IC50 value of 114.6 μg/mL), which were isolated for the first time from Hamelia patens. Discussion and conclusion Hamelia patens possesses anti-inflammatory, antioxidant and α-glucosidase inhibitory activities, which support its traditional use. These effects can be attributed to the identified compounds. PMID:26731099

  19. Hypoglycemic activity of Pyrus biossieriana Buhse leaf extract and arbutin: Inhibitory effects on alpha amylase and alpha glucosidase

    PubMed Central

    Yousefi, Fatemeh; Mahjoub, Soleiman; Pouramir, Mahdi; Khadir, Fatemeh

    2013-01-01

    Background: The mechanism of hypoglycemic and hypolipidemic activities of Pyrus biossieriana Buhse leaf extract (PbBLE) and its phytochemical component arbutin, have not been well determined. The present study was performed to understand the hypoglycemic activity mechanisms of pbBLE and arbutin more clearly. Methods: In vitro enzymatic carbohydrate digestion with PbBLE and arbutin was assessed using α-amylase and α-glucosidase powders. The enzyme solutions were premixed with PbBLE and arbutin at different concentrations (0.1, 1, 10 and 100 mg/ml). Substrate solutions and colorimetric reagents were added to the reaction. The release of glucose was determined by spectrophotometric method. Acarbose was used as the positive control. Results: The extract (10, 100 mg/ ml) completely inhibit α- amylase and α- glucosidase activities. The extract produced higher reduction of α-amylase and α-glucosidase activity than arbutin. Inhibition at various concentrations (0.1, 1, 10, 100 mg/ml) were significantly different (p<0.05). Conclusion: Our results exhibited that both the extract and arbutin were able to suppress the enzymes strongly. PMID:24294470

  20. Antioxidant rich grape pomace extract suppresses postprandial hyperglycemia in diabetic mice by specifically inhibiting alpha-glucosidase

    PubMed Central

    2010-01-01

    Background Postprandial hyperglycemia is an early defect of type 2 diabetes and one of primary anti-diabetic targets. Treatment of postprandial hyperglycemia can be achieved by inhibiting intestinal α-glucosidase, the key enzyme for oligosaccharide digestion and further glucose absorption. Grape pomace is winemaking byproduct rich in bioactive food compounds such as phenolic antioxidants. This study evaluated the anti-diabetic potential of two specific grape pomace extracts by determining their antioxidant and anti-postprandial hyperglycemic activities in vitro and in vivo. Methods The extracts of red wine grape pomace (Cabernet Franc) and white wine grape pomace (Chardonnay) were prepared in 80% ethanol. An extract of red apple pomace was included as a comparison. The radical scavenging activities and phenolic profiles of the pomace extracts were determined through the measurement of oxygen radical absorbance capacity, DPPH radical scavenging activity, total phenolic content and flavonoids. The inhibitory effects of the pomace extracts on yeast and rat intestinal α-glucosidases were determined. Male 6-week old C57BLKS/6NCr mice were treated with streptozocin to induce diabetes. The diabetic mice were then treated with vehicle or the grape pomace extract to determine whether the oral intake of the extract can suppress postprandial hyperglycemia through the inhibition of intestinal α-glucosidases. Results The red grape pomace extract contained significantly higher amounts of flavonoids and phenolic compounds and exerted stronger oxygen radical absorbance capacity than the red apple pomace extract. Both the grape pomace extracts but not the apple pomace extract exerted significant inhibition on intestinal α-glucosidases and the inhibition appears to be specific. In the animal study, the oral intake of the grape pomace extract (400 mg/kg body weight) significantly suppressed the postprandial hyperglycemia by 35% in streptozocin-induced diabetic mice following starch challenge. Conclusion This is the first report that the grape pomace extracts selectively and significantly inhibits intestinal α-glucosidase and suppresses postprandial hyperglycemia in diabetic mice. The antioxidant and anti-postprandial hyperglycemic activities demonstrated on the tested grape pomace extract therefore suggest a potential for utilizing grape pomace-derived bioactive compounds in management of diabetes. PMID:20799969

  1. Cathodoluminescence characterization of ion implanted GaAs

    NASA Astrophysics Data System (ADS)

    Cone, M. L.

    1980-03-01

    The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials.

  2. Ab initio study of hot electrons in GaAs.

    PubMed

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B; Louie, Steven G

    2015-04-28

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron-phonon relaxation times at the onset of the Γ, L, and X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron-phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron-phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials. PMID:25870287

  3. Wafer-fused orientation-patterned GaAs

    NASA Astrophysics Data System (ADS)

    Li, Jin; Fenner, David B.; Termkoa, Krongtip; Allen, Mark G.; Moulton, Peter F.; Lynch, Candace; Bliss, David F.; Goodhue, William D.

    2008-02-01

    The fabrication of thick orientation-patterned GaAs (OP-GaAs) films is reported using a two-step process where an OP-GaAs template with the desired crystal domain pattern was prepared by wafer fusion bonding and then a thick film was grown over the template by low pressure hydride vapor phase epitaxy (HVPE). The OP template was fabricated using molecular beam epitaxy (MBE) followed by thermocompression wafer fusion, substrate removal, and lithographic patterning. On-axis (100) GaAs substrates were utilized for fabricating the template. An approximately 350 μm thick OP-GaAs film was grown on the template at an average rate of ~70 μm/hr by HVPE. The antiphase domain boundaries were observed to propagate vertically and with no defects visible by Nomarski microscopy in stain-etched cross sections. The optical loss at ~2 μm wavelength over an 8 mm long OP-GaAs grating was measured to be no more than that of the semi-insulating GaAs substrate. This template fabrication process can provide more flexibility in arranging the orientation of the crystal domains compared to the Ge growth process and is scalable to quasi-phase-matching (QPM) devices operating from the IR to terahertz frequencies utilizing existing industrial foundries.

  4. Preparation and characterization of pulse electrodeposited GaAs films

    NASA Astrophysics Data System (ADS)

    Murali, K. R.; Trivedi, D. C.

    2006-04-01

    GaAs is a III-V compound possessing high mobility and a direct band gap of 1.43 eV, making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared by plating an aqueous solution containing GaCl3 and As2O3 at a pH of 2 and at room temperature. The current density was kept at 50 mA cm-2 and the duty cycle was varied in the range 10-50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single-phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. Atomic force microscope measurements indicated uniform coverage with large crystallites for the films deposited at higher duty cycles. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1 M polysulphide electrolyte. At 60 mW cm-2 illumination, an open-circuit voltage of 0.5 V and a short-circuit current density of 5.0 mA cm-2 were observed for the films deposited at a duty cycle of 50%.

  5. Integration of colossal magnetoresistors with GaAs

    NASA Astrophysics Data System (ADS)

    Khartsev, S. I.; Kim, J.-H.; Grishin, A. M.

    2005-10-01

    Colossal magnetoresistive (CMR) La 0.67Ca 0.33MnO 3 (LCMO) and La 0.67Sr 0.33MnO 3 (LSMO) films have been grown by pulsed laser deposition technique on GaAs(0 0 1) substrates buffered with epitaxial MgO layer. X-ray diffraction revealed strong c-axis out-of-plane orientation and strong in-plane texture of CMR/MgO bilayers on GaAs single crystal. The maximum temperature coefficient of resistivity TCR=9.0% K -1 at 223 K and 2.0% K -1 at 327 K, and the magnetoresistance Δ ρ/ ρ˜-7.95% kOe -1 and -1.47% kOe -1 have been achieved for LCMO/MgO/GaAs and LSMO/MgO/GaAs heteroepitaxial structures, respectively. Comparison with the test LCMO and LSMO films grown directly onto the bulk MgO(0 0 1) single crystal demonstrates the identity of LSMO/MgO/GaAs and LSMO/MgO films properties whereas the LCMO films grown on MgO buffered GaAs show lower transition temperature T=242 K compared to 253 K in LCMO/MgO.

  6. Photoluminescence of Be implanted Si-doped GaAs

    SciTech Connect

    Kroon, R.E.; Botha, J.R.; Neethling, J.H.; Drummond, T.J.

    1999-11-12

    Degenerately doped n-type GaAs produces band-to-band luminescence with the peak energy dependent on the carrier concentration. In this study the photoluminescence of Si-doped GaAs is examined after implantation with high energy Be ions and annealing. The band-to-band peak energy in the unimplanted (reference) material is shown to be smaller than reported values in Te-doped GaAs of the same carrier concentration. This is attributed to compensation in the Si doped material as a result of its amphoteric nature. For the implanted samples, no luminescence was recorded for the unannealed samples or those annealed at 400 C and 500 C. Comparing the relative peak intensities from material annealed at 600 C for 15 min and 30 min indicates an increase in the number of As vacancies with anneal time. For samples annealed at 700 C and 800 C, the dominant luminescence is associated with Ga{sub As} antisite defects. It is suggested that formation of these defects occurs predominantly only at these higher temperatures. Crystal recovery as measured by the luminescence intensity increased with both anneal temperature and time. For the implanted sample annealed at 800 C for 15 min, the dominant peak height was 25% of that from the reference sample.

  7. Selective photon-stimulated desorption of hydrogen from GaAs surfaces.

    PubMed

    Petravic, M; Deenapanray, P N; Comtet, G; Hellner, L; Dujardin, G; Usher, B F

    2000-03-01

    Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces. PMID:11017257

  8. Recovery of gallium and arsenic from GaAs wafer manufacturing slurries

    SciTech Connect

    Jadvar, R.; McCoy, B.J. ); Ford, B.; Galt, J. )

    1991-11-01

    Lapping and polishing slurries from the gallium arsenide (GaAs) wafer manufacturing process were used to develop simple and inexpensive methods for separation and recovery of valuable gallium and toxic arsenic. The lapping slurry, containing GaAs, glycerol, alumina, iron oxide, and water, is treated by a process involving water addition, dissolution of GaAs, mixing, sedimentation, decantation, and evaporation. The polishing slurry, containing GaAs, silica, sodium bicarbonate, sodium hypochlorite and water, is treated simply by a repetitive cycle of adding water, mixing, settling, decanting, and evaporating. After treatment, the slurries contain less than 5 ppm of dissolved arsenic and are considered non-hazardous.

  9. Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

    1986-01-01

    A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

  10. GaAs thin films and methods of making and using the same

    DOEpatents

    Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

    2016-06-14

    Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

  11. Advances in large-diameter liquid encapsulated Czochralski GaAs

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1982-01-01

    The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

  12. GaAs high-speed digital IC technology: An overview

    SciTech Connect

    Larson, L.E.; Jensen, J.F.; Greiling, P.T.

    1986-10-01

    Gallium arsenide integrated circuit technology has advanced to the stage where small-scale integration (SSI) and medium-scale integration (MSI) circuits are available for implementation in high-speed digital systems. The recent availability of GaAs wafer foundries for fabrication of custom designs, along with commercially available GaAs components, allows system designers for the first time to take advantage of the inherent high speed and low power capabilities of the technology. Large-scale integration (LSI) complexity circuits are already being fabricated in the United States and abroad, and higher levels of integration are expected. This will result in improved levels of performance for large digital systems. The advantages of higher levels of integration are clearly evident, although there appears to be an optimum level of integration for each GaAs logic family beyond which system speed actually degrades. In conjunction with the development of GaAs technology, an industry-standard GaAs production process is also evolving. This generic process is available (with minor variations) from most of the GaAs wafer foundries and IC manufacturers. Here the authors review digital GaAs IC device and circuit technology and analyze the performance of GaAs circuits fabricated by this production process. They also analyze the effect of the GaAs IC integration level on computer system speed.

  13. High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng; Yeh, Min-Yen

    2016-08-01

    Silicon oxynitride (SiON) film on a p-type (100) GaAs substrate by liquid phase deposition has been characterized. Aqueous solutions of hydrofluosilicic acid, ammonia and boric acid were used as growth precursors. The electrical characteristics of SiON film are much improved on GaAs with (NH4)2S treatment. With post-metallization annealing (PMA), hydrogen ions further passivate traps in the SiON/GaAs film and interface. Both PMA and (NH4)2S treatments on a SiON/GaAs MOS capacitor produce better interface quality and lower interface state density (Dit) compared with ones without hydrogen and sulfur passivations. The leakage current densities are improved to 7.1 × 10-8 A/cm2 and 1.8 × 10-7 A/cm2 at ±2 V. The dielectric constant of 5.6 and the effective oxide charges of -5.3 × 1010 C/cm2 are obtained. The hysteresis offset of the hysteresis loop is only 0.09 V. The lowest Dit is 2.7 × 1011 cm-2/eV at an energy of about 0.66 eV from the edge of the valence band.

  14. High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng; Yeh, Min-Yen

    2016-05-01

    Silicon oxynitride (SiON) film on a p-type (100) GaAs substrate by liquid phase deposition has been characterized. Aqueous solutions of hydrofluosilicic acid, ammonia and boric acid were used as growth precursors. The electrical characteristics of SiON film are much improved on GaAs with (NH4)2S treatment. With post-metallization annealing (PMA), hydrogen ions further passivate traps in the SiON/GaAs film and interface. Both PMA and (NH4)2S treatments on a SiON/GaAs MOS capacitor produce better interface quality and lower interface state density (Dit) compared with ones without hydrogen and sulfur passivations. The leakage current densities are improved to 7.1 × 10-8 A/cm2 and 1.8 × 10-7 A/cm2 at ±2 V. The dielectric constant of 5.6 and the effective oxide charges of -5.3 × 1010 C/cm2 are obtained. The hysteresis offset of the hysteresis loop is only 0.09 V. The lowest Dit is 2.7 × 1011 cm-2/eV at an energy of about 0.66 eV from the edge of the valence band.

  15. Stable isotope dilution method for the determination of guanidinoacetic acid by gas chromatography/mass spectrometry.

    PubMed

    Fingerhut, Ralph

    2003-01-01

    For more than 30 years, guanidinoacetic acid (GAA), together with other guanidino compounds, has been proposed as an important marker for renal failure, in kidney transplantation, and for renal metabolism, especially for the metabolic activity of the renal proximal tubules. Since the discovery of the first patient with guanidinoacetic acid methyltransferase deficiency in 1994 by Stöckler et al. (Pediatr. Res. 1994; 36: 409), GAA has become of great interest for all laboratories involved in the diagnosis of metabolic diseases. In the literature there are several methods described for the determination of GAA, ranging from ion-exchange chromatography with post-column derivatisation, enzymatic methods, gas chromatography/mass spectrometry (GC/MS), to liquid chromatography/atmospheric pressure chemical ionisation mass spectrometry (LC/APCI-MS). Here a stable isotope dilution method for quantitative and accurate determination of GAA in urine, plasma, and cerebrospinal fluid is described. GAA is converted to the bis(trifluoromethyl)pyrimidine di(tert-butyldimethylsilyl) derivative by stepwise derivatisation with hexafluoroacetylacetone and N-(tert-butyldimethylsilyl)-N-methyltrifluoroacetamide (MTBSTFA). Analysis can be performed using a standard benchtop GC/MS system. For quantitative GAA determination with 1,2-(13)C-GAA as internal standard, selected ion monitoring is performed using m/z 460/462, with m/z 432/433 and 375/376 as qualifiers. PMID:12661026

  16. Peripheral nerve and neuromuscular junction pathology in Pompe disease

    PubMed Central

    Falk, Darin J.; Todd, Adrian Gary; Lee, Sooyeon; Soustek, Meghan S.; ElMallah, Mai K.; Fuller, David D.; Notterpek, Lucia; Byrne, Barry J.

    2015-01-01

    Pompe disease is a systemic metabolic disorder characterized by lack of acid-alpha glucosidase (GAA) resulting in ubiquitous lysosomal glycogen accumulation. Respiratory and ambulatory dysfunction are prominent features in patients with Pompe yet the mechanism defining the development of muscle weakness is currently unclear. Transgenic animal models of Pompe disease mirroring the patient phenotype have been invaluable in mechanistic and therapeutic study. Here, we demonstrate significant pathological alterations at neuromuscular junctions (NMJs) of the diaphragm and tibialis anterior muscle as prominent features of disease pathology in Gaa knockout mice. Postsynaptic defects including increased motor endplate area and fragmentation were readily observed in Gaa−/− but not wild-type mice. Presynaptic neuropathic changes were also evident, as demonstrated by significant reduction in the levels of neurofilament proteins, and alterations in axonal fiber diameter and myelin thickness within the sciatic and phrenic nerves. Our data suggest the loss of NMJ integrity is a primary contributor to the decline in respiratory and ambulatory function in Pompe and arises from both pre- and postsynaptic pathology. These observations highlight the importance of systemic phenotype correction, specifically restoration of GAA to skeletal muscle and the nervous system for treatment of Pompe disease. PMID:25217571

  17. Diffused P+-N solar cells in bulk GaAs

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1982-01-01

    Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

  18. Image processing by four-wave mixing in photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Gheen, Gregory; Cheng, Li-Jen

    1987-01-01

    Three image processing experiments were performed by degenerate four-wave mixing in photorefractive GaAs. The experiments were imaging by phase conjugation, edge enhancement, and autocorrelation. The results show that undoped, semiinsulating, liquid-encapsulated Czochralski-grown GaAs crystals can be used as effective optical processing media despite their small electrooptic coefficient.

  19. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  20. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  1. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  2. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  3. Implementation and Performance of GaAs Digital Signal Processing ASICs

    NASA Technical Reports Server (NTRS)

    Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

    1993-01-01

    The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

  4. Optically Pumped NMR Studies of Mechanically Induced Strain in GaAs Films

    NASA Astrophysics Data System (ADS)

    Bowers, Clifford; Wood, Ryan; Tokarski, John, III; McCarthy, Lauren; Saha, Dipta; Stanton, Christopher; Moreno, Jesus

    2015-03-01

    We present a new methodology for measuring strain in semiconductor films based on optically pumped NMR (OPNMR). Single crystals of GaAs were epoxy bonded to Si wafers at 100 °C. The GaAs is then variably thinned by selective chemical etching. Upon cooling, biaxial tensile strains are induced in the GaAs films since the coefficient of thermal expansion in GaAs is different than in the Si support. OPNMR experiments were carried out at 6-10 K. The OPNMR spectra are selective to nuclei within a photon penetration depth from the surface. When mounted on a 0.635 mm thick Si support, the strain, which is proportional to the observed quadrupole splitting, is found to decrease with increasing thickness of the GaAs films and appears to approach a residual value. When the same GaAs film is mounted on a thicker 5mm Si block, the strain increased. To explain the observations, we consider effects of dislocation relaxation of strain and bending of the composite. The interface strain extracted from the measurements is 5.5 × 10-4, in good agreement with the value estimated using the differential thermal contraction of Si and GaAs. The strain resolution of the technique is about 10-5 in GaAs.

  5. Reversible electrical properties of LEC GaAs

    NASA Astrophysics Data System (ADS)

    Look, D. C.; Theis, W. M.; Yu, P. W.; Sizelove, J. R.; Ford, W.; Mathur, G.

    1987-01-01

    Undoped, low-pressure, liquid-encapsulated Czochralski GaAs can be reversibly changed from conducting ( ρ ˜ 1Ω-cm) to semi-insulating ( ρ ˜ 107Ω-cm) by either slow or fast cooling, respectively, after a 5 hr, 950° C soak in an evacuated quartz ampoule. The semi-insulating wafers are very uniform and lead to tight threshold-voltage control in direct-implant MESFET’s. We have studied crystals in both states by temperature-dependent Hall effect, photoluminescence, IR absorption, mass spectroscopy, and DLTS. It is shown that donor and acceptor concentrations are typically more than an order of magnitude greater than the C and Si concentrations, which are both less than 3 × 1014 cm-3. The EL2 concentration remains relatively constant at about 1.0 × 1016 cm-3. Thus, the normal EL2-Si-C compensation model does not apply. The most likely explanation for the reversibility involves a delicate balance between native-defect donors and acceptors in equilibrium at 950° C, but with the donors dominating after a slow cool, and the acceptors after a fast cool. A consistent model includes a dominant donor at Ec 0.13eV, probably VAs AsGa, and a dominant acceptor at Ev + 0.07eV, probably VGa GaAs. In this model, vacancy motion is very important during the slow cool. Such processes must be strongly considered in the growth of bulk, high-purity GaAs.

  6. Prediction of dislocation generation during Bridgman growth of GaAs crystals

    NASA Technical Reports Server (NTRS)

    Tsai, C. T.; Yao, M. W.; Chait, Arnon

    1992-01-01

    Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

  7. Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

    NASA Astrophysics Data System (ADS)

    Li-Shu, Wu; Yan, Zhao; Hong-Chang, Shen; You-Tao, Zhang; Tang-Sheng, Chen

    2016-06-01

    In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si complementary metal–oxide semiconductor (CMOS) on the same Silicon substrate. GaAs pHEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band GaAs digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in GaAs pHEMT, 15% smaller than the area of normal GaAs and Si CMOS circuits.

  8. Stalled DNA Replication Forks at the Endogenous GAA Repeats Drive Repeat Expansion in Friedreich's Ataxia Cells.

    PubMed

    Gerhardt, Jeannine; Bhalla, Angela D; Butler, Jill Sergesketter; Puckett, James W; Dervan, Peter B; Rosenwaks, Zev; Napierala, Marek

    2016-08-01

    Friedreich's ataxia (FRDA) is caused by the expansion of GAA repeats located in the Frataxin (FXN) gene. The GAA repeats continue to expand in FRDA patients, aggravating symptoms and contributing to disease progression. The mechanism leading to repeat expansion and decreased FXN transcription remains unclear. Using single-molecule analysis of replicated DNA, we detected that expanded GAA repeats present a substantial obstacle for the replication machinery at the FXN locus in FRDA cells. Furthermore, aberrant origin activation and lack of a proper stress response to rescue the stalled forks in FRDA cells cause an increase in 3'-5' progressing forks, which could enhance repeat expansion and hinder FXN transcription by head-on collision with RNA polymerases. Treatment of FRDA cells with GAA-specific polyamides rescues DNA replication fork stalling and alleviates expansion of the GAA repeats, implicating DNA triplexes as a replication impediment and suggesting that fork stalling might be a therapeutic target for FRDA. PMID:27425605

  9. A study of binding biotinylated nano-beads to the surface of (001) GaAs

    NASA Astrophysics Data System (ADS)

    Ding, Ximing; Moumanis, Khalid; Dubowski, Jan J.; Frost, Eric H.

    2006-02-01

    We have investigated the deposition of biotinylated nano-beads on the surface of GaAs. The deposition procedure involved either direct coating of (001) GaAs with nano-beads, or binding the nano-beads with avidin immobilized on the surface of (001) GaAs through the interface of biotin and the NH II terminal group of 11-amino-1-undecanethiol (HS(CH II) 11NH II). The efficiency of binding was tested by washing the samples in a solution of a commercial detergent and by subjecting them to a deionized water ultrasonic bath. The results indicate that nano-beads deposited directly on the surface of (001) GaAs withstand the detergent washing test but they are easily removed by ultrasonic washing. In contrast, the nano-beads attached to (001) GaAs through the avidin-biotin-thiol interface survive the ultrasonic washing tests.

  10. Micromechanical Switches on GaAs for Microwave Applications

    NASA Technical Reports Server (NTRS)

    Randall, John N.; Goldsmith, Chuck; Denniston, David; Lin, Tsen-Hwang

    1995-01-01

    In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

  11. Molecular dynamics simulations of displacement cascades in GaAs.

    SciTech Connect

    Foiles, Stephen Martin

    2010-04-01

    The quantification of the production of primary defects via displacement cascades is an important ingredient in the prediction of the influence of radiation on the performance of electronic components in radiation environments. Molecular dynamics simulations of displacement cascades are performed for GaAs The interatomic interactions are described using a recently proposed Bond Order Potential, and a simple model of electronic stopping is incorporated. The production of point defects is quantified as a function of recoil energy and recoil species. Correlations in the point defects are examined. There are a large number of anti-site defects nearest-neighbor pairs as well as di-vacancies and larger order vacancy clusters. Radiation damage and ion implantation in materials have been studied via molecular dynamics for many years. A significant challenge in these simulations is the detailed identification and quantification of the primary defect production. For the present case of a compound semiconductor, GaAs, there are a larger number of possible point defects compared to elemental materials; two types of vacancies, two types of interstitials and antisite defects. This is further complicated by the fact that, in addition to the formation of point defects, amorphous zones may also be created. The goal of the current work is to quantify the production of primary defects in GaAs due to radiation exposures. This information will be used as part of an effort to predict the influence of radiation environments on the performance of electronic components and circuits. The data provide the initial state for continuum-level analysis of the temporal evolution of defect populations. For this initial state, it is important to know both the number of the various point defects that may be produced as well as the initial spatial correlations between the primary defects. The molecular dynamics simulations employ a recently developed Bond Order Potential (BOP) for GaAs. The analysis

  12. Optical modulator based on GaAs photonic crystals

    NASA Astrophysics Data System (ADS)

    Li, Jiusheng

    2005-11-01

    In this letter, we propose a novel optical modulator based on GaAs photonic crystals and investigate its optically properties numerically by using the finite-difference time-domain method. The position of the cutoff frequency can be varied by free carriers injection, and the band gap shift can be observed. Band gap shift is used to modulate light. Bing several micrometers length, low insertion loss, and large extinction ratios, the modulator can be used in ultra-small and ultra-dense photonic integrated circuits.

  13. 17 GHz low noise GaAs FET amplifier

    NASA Astrophysics Data System (ADS)

    Bharj, J. S.

    1984-10-01

    The considered amplifier is suitable for use as the first stage in a direct broadcast TV satellite receiver, and it was specifically designed for the Unisat spacecraft. Attention is given to RF device characterization, the design of the low-noise FET amplifier, the very significant dispersion effects at 17 GHz, the noise figure, and questions of DC bias. Balanced stages are used for low-noise and high-gain amplifiers to enhance the reliability. The noise figure of the amplifier is approximately 3.75 dB in the frequency band of interest. A low-noise microstrip GaAs FET amplifier circuit is shown.

  14. Coupling reactions of trifluoroethyl iodide on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Singh, N. K.; Kemp, N. T.; Paris, N.; Balan, V.

    2004-07-01

    We report on the reactions of 2-iodo-1,1,1-trifluoroethane (CF3CH2I) on gallium-rich GaAs(100)-(4×1), studied using the techniques of temperature programmed desorption and x-ray photoelectron spectroscopy. The study is to provide evidence for the formation of a higher fluorinated alkene, 1,1,4,4,4-pentafluoro-1-butene (CF2=CHCH2CF3) and alkane, 1,1,1,4,4,4-hexafluorobutane (CF3CH2CH2CF3) from the coupling reactions of covalently bonded surface alkyl (CF3CH2•) moieties. CF3CH2I adsorbs nondissociatively at 150 K. Thermal dissociation of this weakly chemisorbed state occurs below room temperature to form adsorbed CF3CH2• and I• species. The surface CF3CH2• species undergoes β-fluoride elimination to form gaseous CF2=CH2 and this represents the major pathway for the removal of CF3CH2• species from the surface. In competition with the β-fluoride elimination process the adsorbed CF3CH2• species also undergoes, recombination with surface iodine atoms to form recombinative molecular CF3CH2I, olefin insertion reaction with CF2=CH2 to form gaseous CF2=CHCH2CF3, and last self-coupling reaction to form CF3CH2CH2CF3. The adsorbed surface iodine atoms, formed by the dissociation of the molecularly chemisorbed CF3CH2I, and fluorine atoms formed during the β-fluoride elimination reaction, both form etch products (GaI, GaF, AsI, AsF, and As2) by their reactions with the surface layer Ga atoms, subsurface As atoms, and GaAs substrate. In this article we discuss the mechanisms by which these products form from the adsorbed CF3CH2• and I• species, and the role that the GaAs surface plays in the proposed reaction pathways. We compare the reactivity of the GaAs surface with transition metals in its ability to facilitate dehydrogenation and coupling reactions in adsorbed alkyl species. .

  15. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  16. Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions

    SciTech Connect

    Venugopal, V.; Basu, T.; Garg, S.; Majumder, S.; Sarangi, S. N.; Som, T.; Das, P.; Bhattacharyya, S. R.; Chini, T. K.

    2010-10-04

    Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.

  17. High-efficiency nanostructured window GaAs solar cells.

    PubMed

    Liang, Dong; Kang, Yangsen; Huo, Yijie; Chen, Yusi; Cui, Yi; Harris, James S

    2013-10-01

    Nanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered open circuit voltage and fill factor. One of the main challenges is formation of good junction and electrical contact. In particular, nanostructures in GaAs only have shown unsatisfactory performances (below 5% in energy conversion efficiency) which cannot match their ideal material properties and the record photovoltaic performances in industry. Here we demonstrate a completely new design for nanostructured solar cells that combines nanostructured window layer, metal mesa bar contact with small area, high quality planar junction. In this way, we not only keep the advanced optical properties of nanostructures such as broadband and wide angle antireflection, but also minimize its negative impact on electrical properties. High light absorption, efficient carrier collection, leakage elimination, and good lateral conductance can be simultaneously obtained. A nanostructured window cell using GaAs junction and AlGaAs nanocone window demonstrates 17% energy conversion efficiency and 0.982 V high open circuit voltage. PMID:24021024

  18. Sn-seeded GaAs nanowires grown by MOVPE.

    PubMed

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A

    2016-05-27

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities. PMID:27087548

  19. 28 percent efficient GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

    1988-01-01

    AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

  20. Step-step interactions on GaAs (110) nanopatterns

    SciTech Connect

    Galiana, B.; Benedicto, M.; Tejedor, P.

    2013-01-14

    The step-step interactions on vicinal GaAs (110) surface patterns have been extracted from the quantitative analysis of the terrace width distribution (TWD). We have specifically studied the interactions in near-equilibrium faceting and kinetics-driven step bunching and meandering formed by spontaneous self-organization or through the modification of GaAs growth kinetics by atomic hydrogen. We show that the experimental TWDs determined from atomic force microscopy measurements can be accurately described by a weighed sum of a generalized Wigner distribution and several Gaussians. The results of our calculations indicate that straight facets are formed during high temperature homoepitaxy due to attractive interactions between [110] steps. At low temperatures, steady state attractive interactions in [110] step bunches are preceded by a transition regime dominated by entropic and energetic repulsions between meandering [11n]-type steps (n {>=} 2), whose population density exceeds that of the [110] bunched steps. In addition, it has been found that atomic H reduces the attractive interactions between [110] bunched steps and enhances entropic and dipole-induced energetic repulsions between H-terminated [11n] steps through the inhibition of As-As bond formation at step edges. Our analysis has evidenced a correlation between the value of the adjustable parameter that accounts in our model for the specific weight of the secondary peaks in the TWD ({beta}) and the extent of transverse meandering on the vicinal surface.

  1. Phase Transformation in Radially Merged Wurtzite GaAs Nanowires

    PubMed Central

    2015-01-01

    III–V Nanowires (NWs) grown with metal–organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. In particular, we investigated what happens when adjacent WZ NWs radially merge with each other by analyzing the evolution of XRD peaks for different amounts of radial overgrowth and merging. By preparing cross-sectional lamella samples we also analyzed the local crystal structure of partly merged NWs by transmission electron microscopy. Once individual NWs start to merge, the crystal structure of the merged segments is transformed progressively from initial pure WZ to a mixed WZ/ZB structure. The merging process is then modeled using a simple combinatorial approach, which predicts that merging of two or more WZ NWs will result in a mixed crystal structure containing WZ, ZB, and 4H. The existence large and relaxed segments of 4H structure within the merged NWs was confirmed by XRD, allowing us to accurately determine the lattice parameters of GaAs 4H. We compare the measured WZ and 4H unit cells with an ideal tetrahedron and find that both the polytypes are elongated in the c-axis and compressed in the a-axis compared to the geometrically converted cubic ZB unit cell. PMID:26494983

  2. Sn-seeded GaAs nanowires grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A.

    2016-05-01

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p–n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities.

  3. Image processing using Gallium Arsenide (GaAs) technology

    NASA Technical Reports Server (NTRS)

    Miller, Warner H.

    1989-01-01

    The need to increase the information return from space-borne imaging systems has increased in the past decade. The use of multi-spectral data has resulted in the need for finer spatial resolution and greater spectral coverage. Onboard signal processing will be necessary in order to utilize the available Tracking and Data Relay Satellite System (TDRSS) communication channel at high efficiency. A generally recognized approach to the increased efficiency of channel usage is through data compression techniques. The compression technique implemented is a differential pulse code modulation (DPCM) scheme with a non-uniform quantizer. The need to advance the state-of-the-art of onboard processing was recognized and a GaAs integrated circuit technology was chosen. An Adaptive Programmable Processor (APP) chip set was developed which is based on an 8-bit slice general processor. The reason for choosing the compression technique for the Multi-spectral Linear Array (MLA) instrument is described. Also a description is given of the GaAs integrated circuit chip set which will demonstrate that data compression can be performed onboard in real time at data rate in the order of 500 Mb/s.

  4. GaAs clean up studied with synchrotron radiation photoemission

    NASA Astrophysics Data System (ADS)

    Tallarida, Massimo; Adelmann, Christoph; Delabie, Annelies; van Elshocht, Sven; Caymax, Matty; Schmeisser, Dieter

    2012-12-01

    In this contribution we describe the chemical changes at the surface of GaAs upon adsorption of tri-methyl-aluminum (TMA). TMA is used to grow Al2O3 with atomic layer deposition (ALD) usually using H2O as oxygen source. Recently, it was pointed out that the adsorption of TMA on various III-V surfaces reduces the native oxide, allowing the growth of an abrupt III-V/High-K interface with reduced density of defects. Synchrotron radiation photoemission spectroscopy (SR-PES) is a powerful method to characterize surfaces and interfaces of many materials, as it is capable to determine their chemical composition as well as the electronic properties. We performed in-situ SR-PES measurements after exposing a GaAs surface to TMA pulses at about 250°C. Upon using the possibility of tuning the incident photon energy we compared the Ga3d spectra at 41 eV, 71 eV, 91 eV and 121 eV, as well as the As3d at 71 eV and 91 eV. Finally, we show that using SR-PES allows a further understanding of the surface composition, which is usually not accessible with other techniques.

  5. Subnanosecond, high voltage photoconductive switching in GaAs

    SciTech Connect

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. ); O'Bannon, B.J. )

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  6. Bismuth alloying properties in GaAs nanowires

    SciTech Connect

    Ding, Lu; Lu, Pengfei; Cao, Huawei; Cai, Ningning; Yu, Zhongyuan; Gao, Tao; Wang, Shumin

    2013-09-15

    First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration and the band edge shifts when spin–orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. - Graphical abstract: Top view of Bi-doped GaAs nanowires. Ga, As, and Bi atoms are denoted with grey, purple and red balls, respectively. Display Omitted - Highlights: • A typical model of Ga{sub 31}As{sub 31} nanowires is introduced for its reasonable band gap. • The band gap of GaAs{sub 1−x}Bi{sub x} shrinks clearly with the increasing Bi concentration. • The band edge shifts when spin–orbit coupling (SOC) is considered. • The insertion of Bi atom leads to hybridization of Ga/As/Bi p states.

  7. Sol-gel derived ? thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Arscott, S.; Smith, N.; Kurchania, R.; Milne, S. J.; Miles, R. E.

    1998-02-01

    Sol-gel derived thin films of lead zirconate titanate (PZT) have been fabricated on a platinized GaAs substrate using a propane-1,3-diol based sol-gel route. PZT can be used as the piezoelectric component in bulk acoustic wave devices for monolithic microwave integrated circuit applications. A 100 nm silicon nitride buffer layer was deposited onto the GaAs by plasma-enhanced chemical vapour deposition in order to prevent gallium and arsenic outdiffusion during film fabrication. Rapid thermal processing (RTP) techniques were employed to decompose thermally the sol-gel layer to PZT in a further effort to minimize problems of gallium and arsenic outdiffusion. Adhesion between the bottom electrode and substrate was found to improve when an intermediate titanium layer deposited between the platinum and silicon nitride was oxidized prior to deposition of the platinum electrode. A crystalline PZT film was produced on the 0268-1242/13/2/016/img9 substrate configuration by firing the sol-gel coating at 0268-1242/13/2/016/img10C for 10 s using RTP. A single deposition of sol resulted in a film having a thickness of 0268-1242/13/2/016/img11. Ferroelectric hysteresis measurements yielded average values of remanant polarization and coercive field of 0268-1242/13/2/016/img12 and 0268-1242/13/2/016/img13 respectively.

  8. Thermal stress cycling of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Janousek, B. K.; Francis, R. W.; Wendt, J. P.

    1985-01-01

    A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

  9. Preparation of pulse plated GaAs films

    NASA Astrophysics Data System (ADS)

    Murali, K. R.; Trivedi, D. C.

    2006-07-01

    Thin GaAs films were prepared by pulse plating from an aqueous solution containing 0.20 M GaCl3 and 0.15 M As2O3 at a pH of 2 and at room temperature. The current density was kept as 50 mA cm-2 the duty cycle was varied in the range 10 50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1 M polysulphide electrolyte. At 60 mW cm-2 illumination, an open circuit voltage of 0.5 V and a short circuit current density of 5.0 mA cm-2 were observed for the films deposited at a duty cycle of 50%.

  10. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.; Van Rheenen, Arthur D.; Jostad, Leon; Kim, Joo-Young; Gable, Ben

    1992-01-01

    The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum operating conditions. Current noise characterization was measured at the drain in the temperature range 300 to 77 K. Device design and MBE processing are described. Static I-V characterization is done at 300, 77 and 6 K. The measurements indicate that the Aerojet GaAs n-JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered as a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to that of Si MOSFETs operating at liquid helium temperatures, and is equal to the best Si n-JFETs operating at 300 K.

  11. Activating frataxin expression by repeat-targeted nucleic acids

    PubMed Central

    Li, Liande; Matsui, Masayuki; Corey, David R.

    2016-01-01

    Friedreich's ataxia is an incurable genetic disorder caused by a mutant expansion of the trinucleotide GAA within an intronic FXN RNA. This expansion leads to reduced expression of frataxin (FXN) protein and evidence suggests that transcriptional repression is caused by an R-loop that forms between the expanded repeat RNA and complementary genomic DNA. Synthetic agents that increase levels of FXN protein might alleviate the disease. We demonstrate that introducing anti-GAA duplex RNAs or single-stranded locked nucleic acids into patient-derived cells increases FXN protein expression to levels similar to analogous wild-type cells. Our data are significant because synthetic nucleic acids that target GAA repeats can be lead compounds for restoring curative FXN levels. More broadly, our results demonstrate that interfering with R-loop formation can trigger gene activation and reveal a new strategy for upregulating gene expression. PMID:26842135

  12. Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  13. Guanidinoacetic acid versus creatine for improved brain and muscle creatine levels: a superiority pilot trial in healthy men.

    PubMed

    Ostojic, Sergej M; Ostojic, Jelena; Drid, Patrik; Vranes, Milan

    2016-09-01

    In this randomized, double-blind, crossover trial, we evaluated whether 4-week supplementation with guanidinoacetic acid (GAA) is superior to creatine in facilitating creatine levels in healthy men (n = 5). GAA (3.0 g/day) resulted in a more powerful rise (up to 16.2%) in tissue creatine levels in vastus medialis muscle, middle-cerebellar peduncle, and paracentral grey matter, as compared with creatine (P < 0.05). These results indicate that GAA as a preferred alternative to creatine for improved bioenergetics in energy-demanding tissues. PMID:27560540

  14. Relationship between planar GaAs nanowire growth direction and substrate orientation

    NASA Astrophysics Data System (ADS)

    Dowdy, Ryan S.; Walko, Donald A.; Li, Xiuling

    2013-01-01

    Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of <111> B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.

  15. Heteroepitaxial InP solar cells on Si and GaAs substrates

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Swartz, Clifford K.; Brinker, David J.

    1990-01-01

    The characteristics of InP cells processed from thin layers of InP heteroepitaxially grown on GaAs, on silicon with an intervening GaAs layer, and on GaAs with intervening Ga(x)In(1-x)As layers are described, and the factors affecting cell efficiency are discussed. Under 10 MeV proton irradiations, the radiation resistances of the heteroepitaxial cells were superior to that of homoepitaxial InP cells. The superior radiation resistance is attributed to the high dislocation densities present in the heteroepitaxial cells.

  16. Photonic crystal thin films of GaAs prepared by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Povey, I. M.; Whitehead, D.; Thomas, K.; Pemble, M. E.; Bardosova, M.; Renard, J.

    2006-09-01

    Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

  17. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  18. High resolution electron microscopy of GaAs capped GaSb nanostructures

    SciTech Connect

    Molina Rubio, Sergio I; Beltran, AM; Ben, Teresa; Galindo, P.L.; Taboada, Alfonso G; Chisholm, Matthew F

    2012-01-01

    We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1 x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1 x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.

  19. Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Wang, K. L.; Shin, B. K.; Stirn, R. J.

    1980-01-01

    GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

  20. Assembly of Submicron Ferromagnets in GaAs Semiconductors*

    NASA Astrophysics Data System (ADS)

    Shi, Jing

    1996-03-01

    Spin-dependent electronic phenomena discovered in nanoscale metallic systems have raised interesting scientific questions regarding spin interactions and are currently finding technological applications. In particular, incorporating microscopic magnets within semiconducting compounds offers the exciting possibility of combining local magnetism with the flexibility of semiconductor-based quantum electronic structures. This work demonstrates that submicron room-temperature ferromagnets have been successfully formed in GaAs semiconductors through a simple process of ion implantation and subsequent heat treatment (J. Shi et al), Nature 377, 707 (1995); J. Shi et al, J. Appl. Phys. (accepted for publication, 1996).. A combination of transmission electron, atomic force, and magnetic force microscopies have been used in conjunction with magnetization measurements to directly examine the structural and magnetic properties of this new system. After Mn^+-implantation at various doses, rapid thermal annealing crystallizes in situ submicron GaMn ferromagnetic particles ( ~ 200 nm) at the GaAs surface. These GaMn particles are crystalline, some with quasicrystalline-like order. Bulk magnetization measurements show that the GaMn particles are room temperature ferromagnets with a Curie temperature far exceeding room temperature. Both the particle size and coercivity can be varied by controlling the implantation and annealing conditions. High resolution magnetic force microscopy images on single GaMn ferromagnets reveal that unmagnetized samples contain both magnetic single- and multi-domain particles, but after initial magnetization, the single-domain state predominates, with magnetic moments aligned preferentially along the [001] directions of the GaAs substrate. In particular, magnetic force imaging has been performed in a changing magnetic field (up to 8 kOe) to directly study and image magnetization reversal of single-domain particles. *Work done in collaboration with D

  1. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study

    PubMed Central

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices. PMID:25337061

  2. The effect of parental gender on the GAA dynamic mutation in the FRDA gene

    SciTech Connect

    Pianese, L.; Cavalcanti, F.; Calabrese, O. |

    1997-02-01

    Within a cooperative study, we recently isolated the defective gene (X25) causing Friedreich ataxia (FRDA), an autosomal recessive neurodegenerative disorder. X25 encodes a 210-amino acid protein, frataxin, whose function is unknown. Frataxin mRNA levels are reduced in FRDA patients. The most frequent mutation is the expansion of a (GAA){sub n} trinucleotide repeat in the first X25 intron. Normal chromosomes contain 8-22 copies of the triplet, whereas FRDA chromosomes contain >200 copies. In addition, we described few patients with point mutations. The expansion of trinucleotide repeats has been previously demonstrated to be the mutational mechanism associated with eight human diseases. Trinucleotide repeats occur both in coding and noncoding regions of the gene. Although trinucleotide repeats in the normal size range are relatively stable, expanded repeats are highly variable when transmitted from one generation to the next. For the eight previously described diseases, meiotic instability is generally associated with a mutational bias toward an increase in repeat number. Here, we analyze intergenerational variability in FRDA chromosomes in parent-carrier child pairs. In addition, we studied the stability of FRDA expanded alleles in male gametogenesis, directly analyzing male germ cells. 9 refs., 3 figs., 1 tab.

  3. A photoconductive model for superior GaAs THz photomixers

    NASA Astrophysics Data System (ADS)

    Brown, E. R.

    1999-08-01

    Theoretical methods are used to evaluate the THz output from photomixer structures consisting of interdigitated electrodes and planar antennas on top of a low-temperature-grown GaAs layer. Consistent with experiment, the THz power from a standard photomixer is found to be limited by low external quantum efficiency (˜1%). This arises primarily from low photoconductive gain, which is attributed to a long transit time (between electrodes) for the majority of photocarriers generated in the structure. The modeling is then applied to an improved structure containing a thinner absorbing layer (≈0.34 μm for λ=0.85 μm pump) with a dielectric mirror below it to induce resonant-cavity absorption near the surface where the gain is higher. Through increased gain and absorptivity, the model predicts ≈7× greater THz output for the same optical pump power.

  4. Artificial graphene in nanopatterned GaAs Quantum Wells

    NASA Astrophysics Data System (ADS)

    Wang, Sheng; Scarabelli, Diego; Levy, Antonio; Pfeiffer, Loren; West, Ken; Pellegrini, Vittorio; Manfra, Michael J.; Wind, Shalom; Pinczuk, Aron

    2015-03-01

    Electrons in graphene have linear energy-momentum dispersion, making them massless Dirac fermions. An alternative way to achieve massless Dirac-fermions in a controlled and tunable manner is to construct a honeycomb lattice potential for a 2D electron gas in a semiconductor quantum well. We report realization of very short period (as small as 40 nm) honeycomb lattice pattern using e-beam lithography and drying etching on a GaAs quantum well and spectroscopy data of electron states under this potential modulation. The study is carried out using photoluminescence and light scattering at low temperature (about 4K). Inter mini-band transitions are observed by resonant inelastic light scattering and interpreted with calculated mini-band structure. Control over parameters such as Fermi level should permit manipulation of massless fermions. This will provide a platform for novel behavior such as topological states in a semiconductor quantum simulator. Supported by DOE-BES Award DE-SC0010695.

  5. Temporal analysis of SEU in SOI/GAA SRAMs

    SciTech Connect

    Francis, P.; Colinge, J.P.; Berger, G.

    1995-12-01

    This paper analyzes the very strong SEU hardness of a 1k static random-access memory fabricated using the SOI/GAA technology, irradiated with a xenon ion beam at various angles of incidence. The memory has been shown to operate with a supply voltage as low as 2V while still presenting excellent SEU hardness. Since the different physical charge collection mechanisms are particularly slow in SOI devices, it is shown that collected and critical charges must be dynamically compared in order to determine the SEU threshold. A new approach is then proposed to evaluate the time-variable critical charge independently of the pulse shape generated by the incident ion, and a general analytical model is derived. Finally, predictions in good agreement with experimental data are obtained.

  6. Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD

    SciTech Connect

    Baucom, K.C.; Creighton, J.R.; Moffat, H.K.

    1999-01-29

    We have used reflectance-difference spectroscopy (RDS) to examine the surface phases of GaAs(100) during metalorganic chemical vapor deposition (MOCVD). Since the identities of two important surface phases were unknown, we determined their structure and stoichiometry using a variety of surface science techniques. The Type III phase is a newly characterized As-rich (1 X 2)-CH{sub 3} reconstruction. The Type II phase is a metastable derivative of the Type I phase. RDS also indicates that the surface during MOCVD has a considerable degree of heterogeneity. Deposition rates were measured over a similar range of conditions and the kinetically-limited regime was found to correlate with the Type III phase. A simple kinetic model was found to quantitatively describe the deposition rates.

  7. SNMS characterization of ion irradiated GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Scandurra, A.; Licciardello, A.; Torrisi, A.; Weigert, R.; Puglisi, O.

    1996-09-01

    This study deals with the phenomena that influence the relative intensity of the sputtered neutral yields when altered layers of GaAs are analysed by using sputtered neutral mass spectrometry (SNMS) technique. The altered layers were obtained by irradiation with He +, Ne +, Ar +, Kr +, Xe + and O 2+ ions of various energies, in order to explore different nuclear stopping power regimes. The main result is a considerable change both of the absolute and relative yields of As and Ga as a function of the bombarding time, type and energy of primary ions. The absolute variation in the sputtered neutral signal is probably related with the amorphization of the outer layers. The relative variation in the yield of As with respect to Ga is not due to true preferential sputtering but to surface segregation followed by removal of the segregated species during the bombardment.

  8. Surface defects in GaAs wafer processes

    NASA Astrophysics Data System (ADS)

    Matsushita, H.; Ishida, M.; Kikawa, J.

    1990-06-01

    The causes of micro- and macro-irregularities observed on GaAs(100) polished wafers were investigated. From the results, the wafer processes were improved so that a high-quality surface was obtained without orange peel, haze, or pits. For 3-inch wafers the flatness was improved to less than 2 μm in TTV and the warp to less than 5 μm. Improvements in the wafer processes were: development of a better polishing solution, filtering of this solution with maintenance of the pad conditions, thereby eliminating scratches, annealing at high temperature to eliminate pits, advances in slicing and lapping to reduce warp, and three-stage double-sided polishing to eliminate dimples and to improve TTV.

  9. Computational study of ridge states in GaAs nanopillars

    NASA Astrophysics Data System (ADS)

    Yu, Ted H.; Ratsch, Christian

    2015-08-01

    Semiconductor nanopillars have unique geometries that make them very promising materials for a variety of devices. In order to improve their performance, we need to understand how they are affected by ridge states that lie on the six corners of the nanopillar hexagon. Although the GaAs nanopillars are primarily zinc blende (ABC), stacking faults of wurtzite (AB) stacking occur. We use density-functional theory to study stacking faults using one-dimensional periodic geometries that have a combination of zinc blende and wurtzite stacking. In contrast to perfect zinc blende nanopillars, energetically favorable midgap ridge states created by stacking faults are found in these geometries using density-functional theory. The calculated band diagrams and densities of state help us to understand how these midgap states lead to a reduced mobility and carrier localization. We also study how sulfur passivation affects and potentially improves the performance by modifying the ridges.

  10. A Ka-band GaAs monolithic phase shifter

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Geddes, J. J.; Contolatis, A.; Bauhahn, P. E.; Chao, C.

    1983-01-01

    The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

  11. The binding energies of a bulged GaAs nanowire

    NASA Astrophysics Data System (ADS)

    Zamani, A.; Estabar, Th.; Safarpour, Gh.; Moradi, M.

    2014-12-01

    As it is well-known the electronic structure of the semiconductor nanostructures are so sensitive to alteration of confinement while the nanostructure morphology often determines the confinement. Accordingly existence of a bulge on the wire surface will affect the features of the nanowire. In the present work we consider an on-center hydrogenic donor impurity in a GaAs nanowire with bulge. The ground and first excited states energy levels as well as their binding energies are calculated as functions of bulge and nanowire radius. It is found that both the energy levels and binding energies are strongly influenced by the bulge size for ultrafine nanowires. For large wire radii the effects of bulge existence is trivial and the electronic properties of the system approach to those of the simple nanowire.

  12. Thermal annealing of GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Curtis, H. B.; Brinker, David J.

    1991-01-01

    Isochronal and isothermal annealing tests were performed on GaAs concentrator cells which were irradiated with electrons of various energies to fluences up to 1 x 10(exp 16) e/sq cm. The results include: (1) For cells irradiated with electrons from 0.7 to 2.3 MeV, recovery decreases with increasing electron energy. (2) As determined by the un-annealed fractions, isothermal and isochronal annealing produce the same recovery. Also, cells irradiated to 3 x 10(exp 15) or 1 x 10(exp 16) e/sq cm recover to similar un-annealed fractions. (3) Some significant annealing is being seen at 150 C although very long times are required.

  13. Morphology of thermal oxide layers on GaAs

    NASA Astrophysics Data System (ADS)

    Beserman, R.; Schwarz, S. A.; Hwang, D. M.; Chen, C. Y.

    1991-08-01

    The oxidation process of pure GaAs has been studied with use of several complementary experimental techniques: Raman scattering, electrical conductivity, transmission electron microscopy, and secondary-ion mass spectrometry. The morphology of the oxide layer and the oxide-GaAs interface evolve as a function of oxidation time. A high density of well-oriented As microcrystallites penetrates into the substrate, forming a conductive interfacial layer in the early stages of the oxidation process. After longer oxidation times, when the Raman As intensity and the interfacial conductivity are reduced, As is distributed into the oxide layer, forming crystallites that are no longer well oriented. Simultaneously, the crystalline gallium oxide breaks up to into microcrystallites that could provide channels for the outdiffusion of As. From the experimental evidence, we deduce that the interfacial density of crystalline As is reduced for long oxidation times.

  14. High gain GaAs photoconductive semiconductor switches: Switch longevity

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1998-07-01

    Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

  15. The kinetics of parasitic growth in GaAs MOVPE

    NASA Astrophysics Data System (ADS)

    Clayton, A. J.; Irvine, S. J. C.

    2007-03-01

    Gallium arsenide (GaAs) deposition was carried out in a horizontal quartz reactor tube with trimethylgallium (TMGa) and arsine (AsH 3) as precursors, using a hydrogen (H 2) carrier gas. Temperatures were in the range 400-500 °C, where surface reactions limit deposition rate. Nucleation time and deposition rate were monitored using laser interferometry, optimum reflectance was gained by aligning a quartz wafer to back reflect the incident beam. The 980 nm infrared laser beam was sufficiently long in wavelength to be able to penetrate the wall deposit. Results showing the effect of temperature and V/III ratio on the nucleation time and deposition rate are presented, where with temperature the nucleation delay was observed to reduce and the growth rate to increase. The nucleation delay is consistent with a thermally activated surface nucleation for the parasitic GaAs. A theoretical growth rate model, based on a restricted set of reaction steps was used to compare with the experimental growth rates. Without any free parameters, the growth rates from theoretical calculation and experiment agreed within a factor of two and showed the same trends with V/III ratio and temperature. The non-linearity of the theoretical growth rates on an Arrhenius plot indicates that there is more than one dominant reaction step over the temperature range investigated. The range of experimental activation energies, calculated from Arrhenius plots, was 17.56-23.59 kJ mol -1. A comparison of these activation energies and minimum deposition temperature with the literature indicates that the wall temperature measurement on an Aixtron reactor is over 100 °C higher than previously reported.

  16. XPS and AFM Study of GaAs Surface Treatment

    SciTech Connect

    Contreras-Guerrero, R.; Wallace, R. M.; Aguirre-Francisco, S.; Herrera-Gomez, A.; Lopez-Lopez, M.

    2008-11-13

    Obtaining smooth and atomically clean surfaces is an important step in the preparation of a surface for device manufacturing. In this work different processes are evaluated for cleaning a GaAs surface. A good surface cleaning treatment is that which provides a high level of uniformity and controllability of the surface. Different techniques are useful as cleaning treatments depending on the growth process to be used. The goal is to remove the oxygen and carbon contaminants and then form a thin oxide film to protect the surface, which is easy to remove later with thermal desorption mechanism like molecular beam epitaxy (MBE) with minimal impact to the surface. In this study, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to characterize the structure of the surface, the composition, as well as detect oxygen and carbon contaminant on the GaAs surface. This study consists in two parts. The first part the surface was subjected to different chemical treatments. The chemical solutions were: (a)H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O(4:1:100), (b) HCl: H{sub 2}O(1:3), (c)NH{sub 4}OH 29%. The treatments (a) and (b) reduced the oxygen on the surface. Treatment (c) reduces carbon contamination. In the second part we made MOS devices on the surfaces treated. They were characterized by CV and IV electrical measurements. They show frequency dispersion.

  17. Oxygen defects in GaAs: A hybrid functional study

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-03-01

    Using hybrid density functional calculations, we address the structural properties, formation energies, and charge transition levels of a variety of oxygen defects in GaAs. The set of considered defects comprises the bridging O atom in a As-O-Ga configuration, interstitial O atoms in tetrahedral sites, and O atoms substitutional to either Ga (OGa) or As atoms (OAs). In addition, we consider an As vacancy containing two O atoms, for which the most stable configurations are found through the use of molecular dynamics simulations, and defect complexes involving a OAs defect bound to either one or two AsGa antisites, denoted AsGa-OAs and (AsGa)2-OAs , respectively. We find that the bridging O defect and the AsGa-OAs and (AsGa)2-OAs complexes are the most stable oxygen defects in GaAs. The actual occurrence of these defects is examined against two criteria. The first criterion concerns the stability against O dissociation and is evaluated via the calculation of dissociation energies. The second criterion involves the defect formation at thermodynamic equilibrium and is inferred from the comparison between the formation energy of the oxygen defect and that of its O-related dissociation product (bridging O defect). Both the AsGa-OAs and (AsGa)2-OAs complexes satisfy these criteria and are stable against O dissociation. Further analysis in cooled-down conditions leads us to dismiss the AsGa-OAs defect due to the more favorable bonding of two rather than one AsGa antisites. The conclusion that only the bridging O defect and the (AsGa)2-OAs complex are expected to occur is in accord with experimental observations.

  18. EPR studies on the organization of self-assembled spin-labeled organic monolayers adsorbed on GaAs.

    PubMed

    Ruthstein, Sharon; Artzi, Reit; Goldfarb, Daniella; Naaman, Ron

    2005-02-01

    Characterizing the structure and dynamic properties of a single monolayer is a challenge due to the minute amount of material that is probed. Here, EPR spectroscopy is used for investigating the spatial and temporal organization of self-assembled monolayers of 5- and 16-doxyl stearic acid (5 DSA and 16 DSA, respectively) adsorbed on a GaAs substrate. The results are complemented with FTIR and ellipsometery measurements, which provide the evidence for the formation of monolayers. Moreover, a comparison with the FTIR spectrum of a monolayer of stearic acid shows that the monolayers of the spin labeled molecules are less packed due to the hindrance introduced by the labeling group. The EPR spectra provide a new insight on the ordering in the layer and more interestingly, it reveals the time dependence of the organization. For 5DSA, with the spin-label group situated close to the substrate, the EPR spectrum immediately after adsorption is poorly resolved and dominated by the spin-exchange interaction between neighboring molecules. As time increases (up to 1 week) the resolution of the 14N hyperfine coupling increases, revealing a better organized monolayer where the molecules are more homogenously spaced. Moreover, the spectrum of the layer, after reaching equilibrium, shows that there is no motional freedom near the GaAs surface. Orientation dependence measurements on the equilibrated sample show the presence of a preferred orientation of the molecules, although with a wide distribution. The spectrum of the 16DSA monolayer, where the nitroxide spin label is situated at the end of the chain, far from the surface, also showed a poorly resolved spectrum at short times, but unlike 5DSA, it did not exhibit any time dependence. Through EPR line-shape simulations and by comparison with FTIR results, the differences between 5DSA and 16DSA were attributed to difference in coverage caused by the bulky spin label near the surface in the case of 5DSA. PMID:19785139

  19. Anharmonicity in light scattering by optical phonons in GaAs1-xBix

    NASA Astrophysics Data System (ADS)

    Joshya, R. S.; Rajaji, V.; Narayana, Chandrabhas; Mascarenhas, A.; Kini, R. N.

    2016-05-01

    We present a Raman spectroscopic study of GaAs1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode ( LOGaAs' ) of GaAs1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs1-xBix.

  20. High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

    NASA Technical Reports Server (NTRS)

    Frankel, Michael Y.; Whitaker, John F.; Mourou, Gerard A.; Smith, Frank W.; Calawa, Arthur R.

    1990-01-01

    A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

  1. Long-term radiation effects on GaAs solar cell characteristics

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Doviak, M. J.

    1978-01-01

    This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

  2. Free-standing GaAs nanowires growth on ITO glass by MOCVD

    NASA Astrophysics Data System (ADS)

    Wu, D.; Tang, X. H.; Olivier, A.; Li, X. Q.

    2015-04-01

    GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) glass substrate by metalorganic chemical vapour deposition (MOCVD), using Au nanoparticles (NPs) as catalyst. By functionalization of the ITO glass and optimization of the Au NPs deposition time, the Au NPs area density deposited on the ITO glass reaches 92 NP μm-2. Uniform and free-standing GaAs NWs without kinking or worm-shape defects have been grown at 430 °C. More than 96% of the NWs have tilt angles larger than 45° with respect of the substrate. The effects of the growth temperature and the Au NPs size on the GaAs NWs growth rate, the NW diameter, and tapering effect are investigated. These results of GaAs NWs growth are the essential step for understanding III-V NWs integration on transparent conductive oxide coated low cost substrate and developing high efficiencyhybrid solar cells.

  3. Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

    NASA Technical Reports Server (NTRS)

    Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

    2002-01-01

    Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

  4. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  5. High-power question - will diamonds be the next GaAs

    SciTech Connect

    Manz, B.

    1988-05-01

    It is shown that, due to the outstanding properties of diamond material, diamond technology offers much promise for microwave power generation. For example, diamond exhibits high dielectric breakdown voltage (10 to the 7th V, 50 times that of conventional semiconductors such as GaAs), high thermal conductivity (20 W/cm per C, which is about four times that of Cu), a low dielectric constant (5.5, half that of GaAs), and high saturated carrier velocity (2.7 times that of GaAs, Si, or InP). Moreover, unlike GaAs, Si, or InP, the saturated carrier velocity of diamond maintains its high rate in electric fields of increasing intensity. However, the process of growing pure thin-film material is still at experimental stages. The approaches used in growing diamond by the laboratories in the U.S, USSR, and Japan are discussed.

  6. Fracture strength of GaAs solar cells as a function of manufacturing process steps

    NASA Technical Reports Server (NTRS)

    Chen, C. P.; Leipold, M. H.

    1985-01-01

    Fracture of single crystal GaAs substrate during the solar cell processing is an important factor in solar cell yield and cost. Fracture mechanics technique was utilized to evaluate cell cracking characteristics and changes in fracture strength of GaAs solar cells in a present state-of-the-art of manufacturing process for GaAs solar cells from wafer to complete cell of a typical production line. Considerable change in the fracture strength of GaAs solar cells as a function of cell processing was found. The strength data were described by Weibull statistical analysis and can be interpreted with the change of flaw distribution of each of the manufacturing process steps.

  7. Cubic GaS: A Surface Passivator For GaAs

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Barron, Andrew R.; Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.

    1994-01-01

    Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

  8. Advances in Discrete GaAs JFETs and Simple Amplifiers for Deep Cryogenic Readouts

    NASA Technical Reports Server (NTRS)

    Cunningham, T. J.; Fitzsimmons, M.

    1998-01-01

    The progress of the Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.

  9. Direct Observation of the E_ Resonant State in GaAs1-xBix

    SciTech Connect

    Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

    2015-12-15

    Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

  10. Cooperative chemisorption of K and O elements on cleaved GaAs(110) surface

    NASA Astrophysics Data System (ADS)

    Ren, Bin; Miao, Zhuang; Hou, Zhi-Peng; Cheng, Hong-Chang; Shi, Feng; Jiao, Gang-Cheng; Bai, Xiao-Feng; Niu, Sen; Wang, Long; Fu, Ling-Yun

    2014-09-01

    Using the projected augmented wave potential by the density functional theory based upon gradual gradient approach method and the slab model, from the calculated surface, we identify the relaxed atoms sites of GaAs(110) surface, the electronic structure of elements K and O adsorpted on binding sites of ideal GaAs(110) surface have also been calculated, especially the total energy of the adsorption system. The comparison results of calculated total energy showed: for K and O elements at highest coverage of Θ=1ML on GaAs(110) surface, they were not formed to local domain of competitive chemical adsorption, while they were formed to a compound uniformity phase of cooperative chemical adsorption. Our calculated results providing theoretical basis and reference for the application of alkali oxidation adsorpted on GaAs surface to form a negative electron affinity photocathode.

  11. Epitaxial thin film GaAs solar cells using OM-CVD techniques. [Organometallics

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

  12. Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

    PubMed Central

    2012-01-01

    In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)B substrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends. PMID:23095345

  13. Inversion of spin dependent photocurrent at Fe3O4/modulation doped GaAs heterointerfaces

    NASA Astrophysics Data System (ADS)

    Shirahata, Y.; Wada, E.; Itoh, M.; Taniyama, T.

    2011-04-01

    We demonstrate inversion of the spin dependent photocurrent across an Fe3O4/modulation doped GaAs interface under optical spin orientation condition. The spin dependent photocurrent for fully epitaxial Fe3O4/GaAs and Fe/GaAs interfaces clearly show the opposite magnetic field dependence, where the spin filtering efficiency for the Fe3O4/GaAs decreases with increasing magnetic field. The results clearly indicate that the spin polarization of the Fe3O4 layer has the opposite sign to that of Fe at the Fermi energy, consistent with theoretical predictions, and the result is a consequence of the atomically flat Fe3O4/GaAs interface we obtained.

  14. Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

    NASA Astrophysics Data System (ADS)

    Jena, B.; Pradhan, K. P.; Dash, S.; Mishra, G. P.; Sahu, P. K.; Mohapatra, S. K.

    2015-09-01

    In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed. Undoped GAA MOSFET is a radical invention as it introduces a new direction for transistor scaling. In conventional MOSFET, generally the channel doping concentration is very high to provide high on-state current, but in contrary it causes random dopant fluctuation and threshold voltage variation. So, the undoped nature of GAA MOSFET solves the above complications. Hence, we have analyzed the electrical characteristics as well as the analog/RF performances of undoped GAA MOSFET through Sentaurus device simulator.

  15. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  16. Maltose metabolism of Pseudomonas fluorescens.

    PubMed Central

    Guffanti, A A; Corpe, W A

    1975-01-01

    Pseudomonas fluorescens W uses maltose exclusively by hydrolyzing it to glucose via an inducible alpha-glucosidase (alpha-D-glucoside glucohydrolase, EC 3.2.1.20). No evidence for phosphorolytic cleavage or oxidation to maltobionic acid was found in this organism. The alpha-glucosidase was totally intracellular and was most active at pH of 7.0. Induction occurred when cells were incubated with maltotriose or maltose. Induction was rapid and easily detectable within the first 5 min after the addition of the inducer. Glucose and its derivatives did not repress induction. Cells growing on DL-alanine or succinate plus maltose exhibited lower levels of alpha-glucosidase than those grown on maltose alone or maltose plus glucose. Induction required both messenger ribonucleic acid and protein synthesis. PMID:240805

  17. A novel GAA-repeat-expansion-based mouse model of Friedreich’s ataxia

    PubMed Central

    Anjomani Virmouni, Sara; Ezzatizadeh, Vahid; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; Chutake, Yogesh; Pook, Mark A.

    2015-01-01

    Friedreich’s ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a GAA repeat expansion mutation within intron 1 of the FXN gene, resulting in reduced levels of frataxin protein. We have previously reported the generation of human FXN yeast artificial chromosome (YAC) transgenic FRDA mouse models containing 90–190 GAA repeats, but the presence of multiple GAA repeats within these mice is considered suboptimal. We now describe the cellular, molecular and behavioural characterisation of a newly developed YAC transgenic FRDA mouse model, designated YG8sR, which we have shown by DNA sequencing to contain a single pure GAA repeat expansion. The founder YG8sR mouse contained 120 GAA repeats but, due to intergenerational expansion, we have now established a colony of YG8sR mice that contain ~200 GAA repeats. We show that YG8sR mice have a single copy of the FXN transgene, which is integrated at a single site as confirmed by fluorescence in situ hybridisation (FISH) analysis of metaphase and interphase chromosomes. We have identified significant behavioural deficits, together with a degree of glucose intolerance and insulin hypersensitivity, in YG8sR FRDA mice compared with control Y47R and wild-type (WT) mice. We have also detected increased somatic GAA repeat instability in the brain and cerebellum of YG8sR mice, together with significantly reduced expression of FXN, FAST-1 and frataxin, and reduced aconitase activity, compared with Y47R mice. Furthermore, we have confirmed the presence of pathological vacuoles within neurons of the dorsal root ganglia (DRG) of YG8sR mice. These novel GAA-repeat-expansion-based YAC transgenic FRDA mice, which exhibit progressive FRDA-like pathology, represent an excellent model for the investigation of FRDA disease mechanisms and therapy. PMID:25681319

  18. Enhancing optical absorption in InP and GaAs utilizing profile etching

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Fatemi, Navid S.; Landis, Geoffrey A.

    1991-01-01

    The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

  19. Enhancing optical absorption in InP and GaAs utilizing profile etching

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Fatemi, Navid S.; Landis, Geoffrey A.

    1991-01-01

    The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells have been manufactured with both GaAs and InP, and the improved optical absorption demonstrated. Preferred parameters for various applications are listed and discussed.

  20. Landau level spin diode in a GaAs two dimensional hole system

    NASA Astrophysics Data System (ADS)

    Klochan, O.; Hamilton, A. R.; das Gupta, K.; Sfigakis, F.; Beere, H. E.; Ritchie, D. A.

    2015-03-01

    We have fabricated and characterized a Landau level spin diode in a GaAs two-dimensional hole system. We used the spin diode to probe the hyperfine coupling between hole and nuclear spins and found no detectable net nuclear spin polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least factor of 50 compared to GaAs electron systems.

  1. Basic mechanisms study for MIS solar cell structures on GaAs

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  2. Electron transfer and capture dynamics in ZnSe quantum wells grown on GaAs

    SciTech Connect

    Dongol, A.; Wagner, H. P.

    2013-12-04

    We investigate the transfer and capture dynamics of electrons in phase coherent photorefractive ZnSe quantum wells grown on GaAs using degenerate three-beam four-wave-mixing. The measurements reveal electron capture times by the quantum well in the order of several tens of picoseconds and a transit time of approximately 5 picoseconds from the GaAs substrate through the ZnMgSe barrier.

  3. Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates

    NASA Astrophysics Data System (ADS)

    Nishikawa, Hironobu; Soga, Tetsuo; Mikuriya, Nobuo; Jimbo, Takashi; Umeno, Masayoshi

    1988-02-01

    Dislocations in GaAs and GaAs/Si are revealed by the etching technique at room temperature. The etchant is composed of H2O, K2Cr2O7, HNO3, HCl and H2SO4. The dislocation density of GaAs grown on Si by MOCVD using GaP and strained layer superlattices is about 1× 106 cm-2.

  4. GaAs transistors formed by Be or Mg ion implantation

    NASA Technical Reports Server (NTRS)

    Hunsperger, R. G.; Marsh, O. J.

    1974-01-01

    N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

  5. Enhanced light absorption in GaAs solar cells with internal Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tobin, S. P.; Vernon, S. M.; Sanfacon, M. M.; Mastrovito, A.

    The use of epitaxial multilayer dielectric mirrors (Bragg reflectors) as back-surface reflectors in thin-film GaAs solar cells on GaAs and silicon substrates is investigated. Al0.3Ga0.9As/Al0.85Ga0.15As Bragg reflectors were grown by low-pressure MOCVD on GaAs substrates and shown to exhibit near-ideal optical reflectance and structural perfection. Thin GaAs solar cells grown on Bragg reflectors showed increases in short-circuit current (0.5 to 1.0 mA/sq cm) and efficiency (0.7 percentage points) relative to cells without back reflectors. Efficiencies of 24.7 percent at one sun AM1.5 were measured for GaAs cells only 2 microns thick on Bragg reflectors. In addition to the optical enhancements, Bragg reflectors also appear to improve the defect structure of GaAs-on-Si solar cells. This approach should lead to improved efficiency for GaAs-on-Si solar cells and improved radiation resistance on GaAs cells.

  6. Single-event phenomena in GaAs devices and circuits

    SciTech Connect

    McMorrow, D.; Melinger, J.S.; Campbell, A.B. III; Weatherford, T.R.; Buchner, S.; Knudson, A.R.; Tran, L.H.

    1996-04-01

    The single-event upset (SEU) characteristics of GaAs devices and circuits are reviewed. GaAs FET-based integrated circuits (IC`s) are susceptible to upsets from both cosmic-ray heavy ions and protons trapped in the Earth`s radiation belts. The origin of the SEU sensitivity of GaAs IC`s is discussed in terms of both device-level and circuit-level considerations. At the device level, efficient charge-enhancement mechanisms through which more charge can be collected than is deposited by the ion have a significant negative impact on the SEU characteristics of GaAs IC`s. At the circuit level, different GaAs digital logic topologies exhibit different levels of sensitivity to SEU because of variations in parameters, including logic levels, capacitances, and the degree of gate or peripheral isolation. The operational and SEU characteristics of several different GaAs logic families are discussed. Recent advances in materials and processing that provide possible solutions to the SEU problem are addressed.

  7. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  8. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces

    PubMed Central

    2008-01-01

    Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures. PMID:20596345

  9. Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

    NASA Technical Reports Server (NTRS)

    Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

    2003-01-01

    NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

  10. Enhanced thermoelectric figure of merit in thin GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Zou, Xiaolong; Chen, Xiaobin; Huang, Huaqing; Xu, Yong; Duan, Wenhui

    2015-05-01

    Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and their dependence on stacking type (wz or zb), size of NWs, and temperature. Although bulk GaAs is a well-known poor thermoelectric material, the thermoelectric figure of merit, ZT, is significantly enhanced in thin GaAs NWs. Typically, the room temperature ZT of a 1.1 nm-diameter GaAs NW reaches as high as 1.34, exhibiting more than 100-fold improvement over the bulk counterpart, which is attributed to both the reduced thermal conduction and enhanced power factor in thin NWs. Adopting their unique electronic characteristics, further enhancement is possible through surface engineering, for example, the introduction of surface roughness or dopants.Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and their dependence on stacking type (wz or zb), size of NWs, and temperature. Although bulk GaAs is a well-known poor thermoelectric material, the thermoelectric figure of merit, ZT, is significantly enhanced in thin GaAs NWs. Typically, the room temperature ZT of a 1.1 nm-diameter GaAs NW reaches as high as 1.34, exhibiting more than 100-fold improvement over the bulk counterpart, which is attributed to both the reduced thermal conduction and enhanced power factor in thin NWs. Adopting their unique electronic characteristics, further enhancement is possible through surface engineering, for example, the introduction of surface

  11. Aging and detergent washing effects of the surface of (001) and (110) GaAs passivated with hexadecanethiol

    NASA Astrophysics Data System (ADS)

    Moumanis, Kh.; Ding, X.; Dubowski, J. J.; Frost, E. H.

    2006-08-01

    We report on aging and detergent washing effects in GaAs wafers passivated with hexadecanethiol (HDT) [HS(CH2)15CH3]. The evolution of the photoluminescence (PL) signal from GaAs was measured at room temperature as a function of time, up to 1000h, for thiolated (001) GaAs that was solvent cleaned and etched using standard procedures, and for thiolated (110) GaAs that was obtained by cleaving in air. For 2h of thiolation time, the decay of the PL signal from (001) GaAs and (110) GaAs could be fitted, respectively, with double and single exponential functions. This indicates that at least two different types of non-adiative recombination centers (NRRC) form on the (001) surface. The overall density of surface states formed on (110) GaAs is significantly lower than those on (001) GaAs. A single exponential decay of the PL signal has been observed for 18h thiolated samples. The strong increase of the PL signal after detergent washing of (001) GaAs suggests that this treatment is effective in removal of some of the NRRC. The 19-fold enhancement of the PL signal, in comparison to that of the oxidized sample, has been obtained using the sample that, following the etching and detergent washing procedures, was thiolated with HDT.

  12. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  13. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

  14. GaAs Substrates for High-Power Diode Lasers

    NASA Astrophysics Data System (ADS)

    Mueller, Georg; Berwian, Patrick; Buhrig, Eberhard; Weinert, Berndt

    GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500,^-2) and Si-doping ( ~10^18,^-3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (= 3 mathrm{in} -> >=3,) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.GaAs crystals with diameters of 2 and 3in were grown in pyrolytic Boron Nitride (pBN) crucibles having a small-diameter seed section and a conical part. Boric oxide was used to fully encapsulate the crystal and the melt. An initial silicon content in the GaAs melt of c (melt) = 3 x10^19,^-3 has to be used in order to achieve a carrier concentration of n = (0.8- 2) x10^18,^-3, which is the substrate specification of the device manufacturer of the diode-laser. The EPD could be reduced to values between 500,^-2 and 50,^-2 with a Si-doping level of 8 x10^17 to 1 x10^18,^-3. Even the 3in wafers have rather large dislocation-free areas. The lowest EPDs ( <100,^-2) are achieved for long seed wells of the crucible.

  15. Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Qian, Yun-Sheng; Zhang, Yi-Jun; Chang, Ben-Kang

    2012-03-01

    Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

  16. High purity liquid phase epitaxial GaAs for radiation detectors

    SciTech Connect

    Wynne, D.I.; Haller, E.E.; Rossington Tull, C.S.

    1998-12-31

    The authors report on the growth of high purity n-GaAs using Liquid Phase Epitaxy (LPE) and the fabrication of room temperature p-i-n radiation detectors. The epilayers are grown from a Ga solvent in a graphite boat in a pure hydrogen atmosphere. Growth is started at a temperature of approximately 800 C. The best epilayers show a net-residual-donor concentration of 2 {times} 10{sup 13} cm{sup {minus}3}, confirmed by Hall effect measurements. The residual donors have been analyzed by far infrared spectroscopy and found to be sulfur and silicon. Epilayers with thicknesses of up to 120 {micro}m have been deposited on 650 {micro}m thick semi-insulating GaAs substrates and on 500 {micro}m thick n{sup +}-type GaAs substrates. The authors report the results obtained with Schottky barrier diodes fabricated from these high purity n-type GaAs epilayers and operated as X-ray detectors. The Schottky barrier contacts consisted of evaporated circular gold contacts on epilayers on n{sup +} substrates. The ohmic contacts were formed by evaporated and alloyed Ni-Ge-Au films on the back of the substrate. Several of the diodes exhibit currents of the order of 1 to 10 nA at reverse biases depleting approximately 50 {micro}m of the epilayer. This very encouraging result, demonstrating the possibility for fabricating GaAs p-i-n diodes with depletion layers in high purity GaAs instead of semi-insulating GaAs, is supported by similar results obtained by several other groups. The consequences of using high purity instead of semi-insulating GaAs will be much reduced charge carrier trapping. Diode electrical characteristics and detector performance results using {sup 55}Fe and {sup 241}Am radiation will be discussed.

  17. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer

    SciTech Connect

    Dementyev, P. A.; Dunaevskii, M. S. Samsonenko, Yu. B.; Cirlin, G. E.; Titkov, A. N.

    2010-05-15

    A technique for measurement of longitudinal current-voltage characteristics of semiconductor nanowhiskers remaining in contact with the growth surface is suggested. The technique is based on setting up a stable conductive contact between the top of a nanowhisker and the probe of an atomic-force microscope. It is demonstrated that, as the force pressing the probe against the top of the nanowhisker increases, the natural oxide layer covering the top is punctured and a direct contact between the probe and the nanowhisker body is established. In order to prevent nanowhiskers from bending and, ultimately, breaking, they need to be somehow fixed in space. In this study, GaAs nanowhiskers were kept fixed by partially overgrowing them with a GaAs layer. To isolate nanowhiskers from the matrix they were embedded in, they were coated by a nanometer layer of AlGaAs. Doping of GaAs nanowhiskers with silicon was investigated. The shape of the current-voltage characteristics obtained indicates that introduction of silicon leads to p-type conduction in nanowhiskers, in contrast to n-type conduction in bulk GaAs crystals grown by molecular-beam epitaxy. This difference is attributed to the fact that the vapor-liquid-solid process used to obtain nanowhiskers includes a final stage of liquid-phase epitaxy, a characteristic of the latter being p-type conduction obtained in bulk GaAs(Si) crystals.

  18. Adjunctive β2-agonist treatment reduces glycogen independently of receptor-mediated acid α-glucosidase uptake in the limb muscles of mice with Pompe disease

    PubMed Central

    Farah, Benjamin L.; Madden, Lauran; Li, Songtao; Nance, Sierra; Bird, Andrew; Bursac, Nenad; Yen, Paul M.; Young, Sarah P.; Koeberl, Dwight D.

    2014-01-01

    Enzyme or gene replacement therapy with acid α-glucosidase (GAA) has achieved only partial efficacy in Pompe disease. We evaluated the effect of adjunctive clenbuterol treatment on cation-independent mannose-6-phosphate receptor (CI-MPR)-mediated uptake and intracellular trafficking of GAA during muscle-specific GAA expression with an adeno-associated virus (AAV) vector in GAA-knockout (KO) mice. Clenbuterol, which increases expression of CI-MPR in muscle, was administered with the AAV vector. This combination therapy increased latency during rotarod and wirehang testing at 12 wk, in comparison with vector alone. The mean urinary glucose tetrasaccharide (Glc4), a urinary biomarker, was lower in GAA-KO mice following combination therapy, compared with vector alone. Similarly, glycogen content was lower in cardiac and skeletal muscle following 12 wk of combination therapy in heart, quadriceps, diaphragm, and soleus, compared with vector alone. These data suggested that clenbuterol treatment enhanced trafficking of GAA to lysosomes, given that GAA was expressed within myofibers. The integral role of CI-MPR was demonstrated by the lack of effectiveness from clenbuterol in GAA-KO mice that lacked CI-MPR in muscle, where it failed to reverse the high glycogen content of the heart and diaphragm or impaired wirehang performance. However, the glycogen content of skeletal muscle was reduced by the addition of clenbuterol in the absence of CI-MPR, as was lysosomal vacuolation, which correlated with increased AKT signaling. In summary, β2-agonist treatment enhanced CI-MPR-mediated uptake and trafficking of GAA in mice with Pompe disease, and a similarly enhanced benefit might be expected in other lysosomal storage disorders.—Farah, B. L., Madden, L., Li, S., Nance, S., Bird, A., Bursac, N., Yen, P. M., Young, S. P., Koeberl, D. D. Adjunctive β2-agonist treatment reduces glycogen independently of receptor-mediated acid α-glucosidase uptake in the limb muscles of mice with

  19. Strain-induced birefringence in GaAs

    SciTech Connect

    Raynolds, J.E.; Levine, Z.H.; Wilkins, J.W.

    1995-04-15

    We present the results of density-functional calculations of the dielectric function and the photoelastic tensor---the susceptibility for strain-induced birefringence---in GaAs for photon frequencies below the direct band gap. These calculations were performed in the Kohn-Sham local-density approximation in a pseudopotential/plane-wave scheme which includes local-field effects and self-energy corrections. We find that traditional special-points integration methods are inadequate for performing the Brillouin-zone integrals involved in computing the photoelastic tensor. Very high resolution of the critical point at {ital k}=0 is needed to obtain even the correct {ital qualitative} behavior of the photoelastic tensor. Accurate expansions of the integrand in spherical harmonics for small {ital k} and plane waves elsewhere in the Brillouin zone were obtained and an integration approach which correctly integrates the expansions was used. Dramatic improvement in the qualitative frequency dispersion of the photoelastic tensor, in comparison with experiments, is obtained despite a large (50%) shift of the static value away from the measurement. We also present the result of a calculation of the internal strain relaxation associated with strains along the bonding [111] direction. These results are in excellent agreement with two previous {ital ab} {ital initio} calculations and with recent measurements.

  20. Fine structure of the Mn acceptor in GaAs

    NASA Astrophysics Data System (ADS)

    Krainov, I. V.; Debus, J.; Averkiev, N. S.; Dimitriev, G. S.; Sapega, V. F.; Lähderanta, E.

    2016-06-01

    We reveal the electronic level structure of the Mn acceptor, which consists of a valence-band hole bound to an Mn2 + ion, in presence of applied uniaxial stress and an external magnetic field in bulk GaAs. Resonant spin-flip Raman scattering is used to measure the g factor of the AMn0 center in the ground and excited states with the total angular momenta F =1 and F =2 and characterize the optical selection rules of the spin-flip transitions between these Mn-acceptor states. We determine the random stress fields near the Mn acceptor, the constant of the antiferromagnetic exchange interaction between the valence-band holes and the electrons of the inner Mn2 + shell as well as the deformation potential for the exchange energy. The p -d exchange energy, in particular, decreases significantly with increasing compressive stress. By combining the experimental Raman study with the developed theoretical model on the scattering efficiency, in which also the random local and external uniaxial stresses and magnetic field are considered, the fine structure of the Mn acceptor is determined in full detail.

  1. Solid phase epitaxial regrowth of (100)GaAs

    SciTech Connect

    Almonte, M I

    1996-02-01

    This thesis showed that low temperature (250 C) SPE of stoichiometrically balanced ion implanted GaAs layers can yield good epitaxial recovery for doses near the amorphization threshold. For 250 C anneals, most of the regrowth occurred in the first 10 min. HRTEM revealed much lower stacking fault density in the co-implanted sample than in the As-only and Ga-only samples with comparable doses. After low temp annealing, the nonstoichiometric samples had a large number of residual defects. For higher dose implants, very high temperatures (700 C) were needed to remove residual defects for all samples. The stoichiometrically balanced layer did not regrow better than the Ga-only and As-only samples. The co-implanted sample exhibited a thinner amorphous layer and a room temperature (RT) annealing effect. The amorphous layer regrew about 5 nm, suggesting that stoichiometrically balanced amorphous layers can regrow even at RT. Mechanisms for solid phase crystallization in (100)GasAs is discussed: nucleation and growth of randomly oriented crystallites and SPE. These two mechanisms compete in compound semiconductors at much lower temperatures than in Si. For the low dose As-only and Ga-only samples with low-temp anneals, both mechanisms are active. For this amorphization threshold dose, crystallites remain in the amorphous layer for all as-implants. 250 C annealing showed recrystallization from the surface and bulk for these samples; for the co-implant, the mechanism is not evident.

  2. Si and GaAs photocapacitive MIS infrared detectors

    NASA Technical Reports Server (NTRS)

    Sher, A.; Tsuo, Y. H.; Moriarty, J. A.; Miller, W. E.; Crouch, R. K.

    1980-01-01

    Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.

  3. GaAs quantum dot solar cell under concentrated radiation

    SciTech Connect

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-08-17

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V{sub OC}-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns.

  4. Radiation effects in GaAs AMOS solar cells

    NASA Technical Reports Server (NTRS)

    Shin, B. K.; Stirn, R. J.

    1979-01-01

    The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

  5. Ultrafast terahertz emission properties in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Wang, Aihua; Shi, Yulei; Zhou, Qingli

    2015-08-01

    Ultrafast carrier dynamics in Schottky barriers is an extremely active area of research in recent years. The observation of the generation of terahertz pulses from metal/semiconductor interfaces provides a technique to characterize electronic properties of these materials. However, a detailed analysis of these phenomena has not been performed satisfactorily. In this work, the measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors in the terahertz beams are also observed in the temperature-dependent measurements and the femtosecond pump-generation studies of the Au/GaAs interfaces. These effects can be fully explained in terms of the dynamics of carrier transfer in the Au/GaAs Schottky barriers, which involves the internal photoelectric emission and the electron tunneling effect, and picosecond time constants are found for these processes.

  6. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth. PMID:26876494

  7. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    SciTech Connect

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  8. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  9. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    NASA Astrophysics Data System (ADS)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  10. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules. PMID:26376087

  11. Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

    NASA Technical Reports Server (NTRS)

    Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

    2003-01-01

    In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

  12. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    PubMed Central

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  13. GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

    SciTech Connect

    Cardozo, Benjamin Lewin

    2004-12-21

    High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most likely due to the high compensation of the commercially grown GaAs absorbing layer, which restricts the depletion width of the device.

  14. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  15. GaAs Refractive Index Dependence On Carrier Density and Optimizing Terahertz Devices

    NASA Astrophysics Data System (ADS)

    Kim, Christopher; Wu, Dong Ho; Graber, Benjamin

    GaAs is used for various applications, including high speed transistors, high-efficiency photovoltaic cells, electro-optics and terahertz (THz) emitters and detectors. To date, information on the refractive index of GaAs is available only over a limited wave spectrum of 0.2-17um, where the refractive index varies from 1.3 to 5.0. As detailed information on the refractive index of GaAs at THz frequencies is not available or inadequate for our effort to develop an improved GaAs-based THz emitter, we experimentally investigated the behavior of the refractive index of GaAs for different charge carrier densities, especially with or without the presence of surface plasma. Using a Time Domain THz Spectrometer, which is capable of measuring THz pulses containing a wave spectrum over 100-3000um with a time accuracy better than 6 femtoseconds, we measured the delay of THz pulses traversing through a GaAs substrate of known thickness while modulating the charge carrier concentration. From the experimental data we estimated the refractive index for THz frequencies to vary from 3.5 to 3.8 for different charge carrier concentrations. We will discuss details of our experiments and implications of our experimental results, especially for our GaAs-based THz devices.

  16. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    NASA Astrophysics Data System (ADS)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  17. Interpolative modeling of GaAs FET S-parameter data bases for use in Monte Carlo simulations

    NASA Technical Reports Server (NTRS)

    Campbell, L.; Purviance, J.

    1992-01-01

    A statistical interpolation technique is presented for modeling GaAs FET S-parameter measurements for use in the statistical analysis and design of circuits. This is accomplished by interpolating among the measurements in a GaAs FET S-parameter data base in a statistically valid manner.

  18. Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

    SciTech Connect

    Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.

    2011-12-23

    The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

  19. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    NASA Astrophysics Data System (ADS)

    Juang, Bor-Chau; Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Simmonds, Paul J.; Lin, Andrew; Liang, Baolai; Huffaker, Diana L.

    2015-03-01

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm2. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  20. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    SciTech Connect

    Juang, Bor-Chau Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Lin, Andrew; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.

    2015-03-16

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  1. Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

    SciTech Connect

    Weatherford, T.R.; Fouts, D.J.; Marshall, P.W. |; Marshall, C.J.; Mathes, B.; LaMacchia, M.

    1997-12-01

    Heavy-ion Single Event Effects (SEE) test results reveal the role of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits.

  2. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  3. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    NASA Astrophysics Data System (ADS)

    Yang, Shang-Hua; Jarrahi, Mona

    2015-09-01

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more than 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.

  4. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures. PMID:27008537

  5. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  6. Experimental studies of the charge limit phenomenon in NEA GaAs photocathodes

    SciTech Connect

    Tang, H.; Alley, R.K.; Aoyagi, H.; Clendenin, J.E.; Frisch, J.C.; Mulhollan, G.A.; Saez, P.J.; Schultz, D.C.; Turner, J.L.

    1994-06-01

    Negative electron affinity GaAs photocathodes have been in continuous use at SLAC for generating polarized electron beams since early 1992. If the quantum efficiency of a GaAs cathode is below a critical value, the maximum photoemitted charge with photons of energies close to the band gap in a 2-ns pulse is found to be limited by the intrinsic properties of the cathode instead of by the space charge limit. We have studied this novel charge limit phenomenon in a variety of GaAs photocathodes of different structures and doping densities. We find that the charge limit is strongly dependent on the cathode`s quantum efficiency and the extraction electric field, and to a lesser degree on the excitation laser wavelength. In addition, we show that the temporal behavior of the charge limit depends critically on the doping density.

  7. GaAs Industry in Europe-Technologies, Trends and New Developments

    NASA Astrophysics Data System (ADS)

    Jung, Helmut; Blanck, Hervé; Bösch, Wolfgang; Mayock, Jim

    The GaAs industry has been growing immensely during recent years. This is mainly driven by the tremendous growth of the wireless communication market, which is still continuously growing. Additionally, an emerging mmW market with applications in automotive, defense and optoelectronics is further driving the demand for GaAs components. The two largest European GaAs fabrication companies, UMS and Filtronic are very well positioned to address the complete frequency range from 1GHz up to 100GHz for commercial, high volume low cost markets, as well as individual niche applications. An overview of the companies' structures, their processes and design capabilities and also their new product developments will be presented in this paper.

  8. Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

    PubMed

    Yong, Chaw Keong; Noori, Keian; Gao, Qiang; Joyce, Hannah J; Tan, H Hoe; Jagadish, Chennupati; Giustino, Feliciano; Johnston, Michael B; Herz, Laura M

    2012-12-12

    The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the GaAs nanowires. We attribute these effects to electron doping by the polymer which reduces the unsaturated surface-state density in GaAs. We find that when the surface of nanowires is terminated by native oxide, the electron injection across the interface is greatly reduced and such surface doping is absent. Our results suggest that surface engineering via π-conjugated polymers can substantially improve the carrier lifetime in nanowire hybrid heterojunctions with applications in photovoltaics and nanoscale photodetectors. PMID:23171081

  9. Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

    PubMed Central

    Zhou, Wei; Chen, Xiao-Jia; Zhang, Jian-Bo; Li, Xin-Hua; Wang, Yu-Qi; Goncharov, Alexander F.

    2014-01-01

    The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments. PMID:25253566

  10. Vapor phase epitaxy of CdTe on sapphire and GaAs

    NASA Astrophysics Data System (ADS)

    Kasuga, Masanobu; Futami, Hiroyuki; Iba, Yoshihiro

    1991-12-01

    CdTe films were deposited on three kinds of sapphire substrate and two kinds of GaAs substrate by open tube vapor transport. X-ray Laue diffraction study showed that CdTe(111) film grew on every kind of sapphire substrate used, i.e. on the (0001) basal plane, the (11 overline20)A plane and the (1 overline102)R plane, and that there exist a few degrees of tilt angel between CdTe(111) and the lattice plane of each substrate. The process of making the tilt angle may be explained by the atomistic mismatch model of the Cd and Al arrangement which is projected on the film-substrate interface. On GaAs(100), either CdTe(111) or CdTe(100) was obtained, whereas only a twin crystalline film was obtained on GaAs(111). These results are also consistent with the mismatch model of Cd and Ga atoms.

  11. Radiation detectors fabricated on high-purity GaAs epitaxial materials

    NASA Astrophysics Data System (ADS)

    Wu, X.; Kostamo, P.; Gädda, A.; Nenonen, S.; Riekkinen, T.; Härkönen, J.; Salonen, J.; Andersson, H.; Zhilyaev, Y.; Fedorov, L.; Eränen, S.; Mattila, M.; Lipsanen, H.; Prunnila, M.; Kalliopuska, J.; Oja, A.

    2014-12-01

    Epitaxial GaAs material shows a great potential in X-ray spectroscopy and radiography applications due to its high absorption efficiency and low defect density. Fabrication of pixel radiation detectors from high-purtity epitaxial GaAs has been developed further. The process is based on mesa etching for pixellisation and sputtering for metallization. The leakage currents of processed pad detectors are below 10 nA/cm2 at a reverse bias of 100 V and decrease exponentially with the temperature. Measurement with transient current technique (TCT) shows that electrons have a trapping time of 8 ns. Good spectroscopic result were obtained from both a pad detector and a hybridized Medipix GaAs detector.

  12. Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Hoang, Thang B.; Moses, A. F.; Zhou, H. L.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.

    2009-03-01

    Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The wurtzite GaAs nanowires exhibit a photoluminescence emission peak at 1.544 eV, 29 meV higher than the zinc blende GaAs free exciton energy. Temperature dependent photoluminescence measurements (4.4-70 K) show indications of defect and impurity related emissions at lower energies (1.53-1.54 eV) and the presence of nonradiative defects. High resolution transmission electron microscopy images show a low density of short zinc blende segments sandwiched in between a dominating wurtzite structure and weak photoluminescence emission related to such zinc blende segments is also observed.

  13. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    SciTech Connect

    Yang, Shang-Hua; Jarrahi, Mona

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more than 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.

  14. Growth of GaAs crystals from the melt in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1988-01-01

    The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

  15. Molecular beam epitaxy growth of GaAs1-xBix

    NASA Astrophysics Data System (ADS)

    Tixier, S.; Adamcyk, M.; Tiedje, T.; Francoeur, S.; Mascarenhas, A.; Wei, Peng; Schiettekatte, F.

    2003-04-01

    GaAs1-xBix epilayers with bismuth concentrations up to x=3.1% were grown on GaAs by molecular beam epitaxy. The Bi content in the films was measured by Rutherford backscattering spectroscopy. X-ray diffraction shows that GaAsBi is pseudomorphically strained to GaAs but that some structural disorder is present in the thick films. The extrapolation of the lattice constant of GaAsBi to the hypothetical zincblende GaBi alloy gives 6.33±0.06 Å. Room-temperature photoluminescence of the GaAsBi epilayers is obtained and a significant redshift in the emission of GaAsBi of ˜84 meV per percent Bi is observed.

  16. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-03-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4A2(4F) → 4T1(4G) and 4T1(4G) → 6A1(6S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.

  17. Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure.

    PubMed

    Zhou, Wei; Chen, Xiao-Jia; Zhang, Jian-Bo; Li, Xin-Hua; Wang, Yu-Qi; Goncharov, Alexander F

    2014-01-01

    The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments. PMID:25253566

  18. Surface modifications induced by bismuth on (0 0 1) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Jiang, W. Y.; Liu, J. Q.; So, M. G.; Myrtle, K.; Kavanagh, K. L.; Watkins, S. P.

    2005-04-01

    We report the identification of reflectance difference (RD) spectra for GaAs (0 0 1) surfaces in the presence of small quantities of trimethylbismuth (TMBi) vapor under organometallic vapor phase epitaxy (OMVPE) conditions. An RD spectrum similar to that observed from the previously reported ( 3×8) Sb-terminated surface of GaAs is reported, suggesting strong similarities between the Bi and Sb terminated surfaces. Because of the low vapor pressure of Bi, it is stable under extended hydrogen purges at growth temperatures of 450C. Whereas As or Sb coverage typically saturates at 1-2 monolayers on the GaAs (0 0 1) surface under OMVPE conditions, no saturation of the Bi coverage is observed in this work. Extended exposure to TMBi results in the formation of Bi islands whose size increase with exposure time and TMBi concentration.

  19. A GaAs DETECTOR FOR DARK MATTER AND SOLAR NEUTRINO RESEARCH

    SciTech Connect

    T. BOWLES; ET AL

    2000-08-01

    The ability to produce large GaAs crystals with the requisite electronic properties to be fabricated into charged particle and photon detectors would provide a detector medium that would find numerous applications in both applied and fundamental research. Various applications would likely include x-ray detectors on satellites, environmental monitoring, medical imaging, bore hole mining spectroscopy, searches for dark matter, and solar neutrino research. We have carried out the development of GaAs detectors using two commercial crystal growing techniques. We have shown it should be able to grow detectors with 20 cm{sup 2} area and a depletion depth of 1 mm. Detectors of this size would find immediate applications in high-resolution, room temperature, low energy gamma ray measurements. We have also arrived at an understanding of the limitations of the common techniques used to grow GaAs and have determined that it should be possible to produce larger detectors using proprietary methods.

  20. Gallium loading of gold seed for high yield of patterned GaAs nanowires

    SciTech Connect

    Boulanger, J. P.; Chia, A. C. E.; LaPierre, R. R.

    2014-08-25

    A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

  1. Optical Response in Amorphous GaAs Thin Films Prepared by Pulsed Laser Deposition

    NASA Astrophysics Data System (ADS)

    Kiwa, Toshihiko; Kawashima, Ichiro; Nashima, Shigeki; Hangyo, Masanori; Tonouchi, Masayoshi

    2000-11-01

    Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250^\\circC@. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiaiton] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

  2. Ion implantation processing for high-speed GaAs JFETs

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Shul, R.J.

    1995-07-01

    GaAs Junction Field Effect Transistors (JFETs) offer a higher gate turn-on voltage, resulting in a better noise margin and reduced power dissipation, than the more widely employed GaAs MESFET. The primary reason the JFET has not been more widely used is the speed penalty associated with the gate/channel junction and corresponding gate length broadening. We present the ion implantation processes used for a self-aligned, all ion-implanted, GaAs JFET that minimizes the speed penalty for the JFET while maintaining the advantageous higher gate turn-on voltage. Process characterization of the p{sub +}-gate implant done with either Mg, Zn, or Cd along with the co-implantation of P is presented. In addition, a novel backside channel confinement technology employing ion-implanted carbon is discussed. Complete JFET device results are reported.

  3. The ZnSe(110) puzzle - Comparison with GaAs(110)

    NASA Technical Reports Server (NTRS)

    Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

    1984-01-01

    The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

  4. Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

    PubMed Central

    2010-01-01

    The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550°C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies. PMID:21076695

  5. The chemistry of O in reduction processes of the GaAs native oxides

    NASA Astrophysics Data System (ADS)

    Cuberes, M. T.; Sacedon, J. L.

    1992-05-01

    We present an X-ray photoelectron spectroscopy (XPS) study of the interfacial chemical reactions during the total reduction of a 5 Å thick GaAs native oxide layer accomplished in two separate stages. First, the As2O3 has been selectively reduced by annealing the oxidized surface at increasing temperatures. In the second stage, the reduction of the Ga oxides has been completed at room temperature by Si deposition. The total amount of O at the GaAs interface remains constant during both processes. During the As2O3 thermal reduction, the analysis of the Ga2p{3}/{2} and Ga LMM spectra shows that, depending on the annealing temperature, GaOx (x < {3}/{2}) or Ga2O3 growth occurs. The Si promoted of the Ga oxides results in the formation of Si oxides of different stoichiometry at the GaAs surface.

  6. Application of pulsed GaAs diode lasers to spectral atmospheric monitoring and remote sensing

    NASA Astrophysics Data System (ADS)

    Pencheva, Vasilka H.; Penchev, S.; Naboko, Vassily N.; Naboko, Sergei V.

    1999-05-01

    We report new aspects of application of pulsed GaAs diode lasers, concerning absorption spectroscopy of water vapor of third oscillatory molecular overtone 8990 - 9012 angstroms, and Mie-scattering lidar signal in the 15 km range. It is accessible by the power characteristics of a system utilizing the powerful `chip-stack' GaAs diode lasers, employing optimal photodetection technique based on an analyzing system with computer operated boxcar. Data on atmospheric aerosol backscatter signal acquired by DL lidar are presented with relevance to the potential of complex atmospheric remote sensing. GaAs diode lasers, with radiation matching water vapor spectrum of absorption- coefficients of 0.5 - 5 km-1 in Beer's law, are shown feasible for DIAL monitoring of atmospheric humidity.

  7. Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

    NASA Astrophysics Data System (ADS)

    Lakhdar, Nacereddine; Lakehal, Brahim

    2016-04-01

    We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate (TM) GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.

  8. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    NASA Astrophysics Data System (ADS)

    Muhammad, R.; Othaman, Z.; Wahab, Y.; Ibrahim, Z.; Sakrani, S.

    2016-04-01

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  9. Origin of Fermi-level pinning at GaAs surfaces and interfaces

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-01

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated.

  10. Origin of Fermi-level pinning at GaAs surfaces and interfaces.

    PubMed

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-10

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated. PMID:25372411

  11. Carbon and group II acceptor coimplantation in GaAs

    SciTech Connect

    Morton, R.; Lau, S.S.; Poker, D.B.; Chu, P.K.; Fung, K.K.; Wang, N.

    1998-11-01

    Coimplantations of carbon and one of the group II acceptors, Mg, Zn, or Cd, were performed and compared to implantations involving only a single element (Mg, Zn, or Cd) or Ga and C coimplanted into GaAs substrates. The group II and C (II/C) coimplantations act to balance the crystal stoichiometry since group II atoms prefer to reside in the Ga sublattice and C prefers to reside in the As sublattice. The electrical characteristics of the various implantations were obtained from sheet and differential Hall measurements. Rutherford backscattering spectrometry was employed to determine the amount of implantation-induced damage which was then correlated to the amount of C activation in the group II/C coimplanted samples. It was found that coimplantation of the heavier group II acceptors, Zn and Cd, resulted in layers with larger peak hole concentrations. This is a result of the large amount of lattice damage created by these elements which is thought to provide the necessary abundance of As vacancies for C activation. Secondary ion mass spectroscopy measurements of the samples after implant activation indicate that C coimplantation significantly reduces the diffusivity of the group II acceptors. Cross-sectional transmission electron microscopy indicated a unique defect structure (extrinsic dislocation loops) for the cases of group II/C coimplantation. These dislocation loops are located at the diffusion front of the group II element in the samples and therefore have a rather profound influence on the diffusion of the group II elements. A rationalization of the defect structure and the effect it has on the diffusion of group II elements is given. {copyright} {ital 1998 American Institute of Physics.}

  12. Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process

    NASA Astrophysics Data System (ADS)

    Okada, Yoshitaka; Iuchi, Yoshimasa; Kawabe, Mitsuo; Harris, James S.

    2000-07-01

    The basic properties of GaAs oxide generated by atomic force microscope (AFM) tip-induced nano-oxidation process have been investigated. The chemical analysis of the AFM tip-generated GaAs oxide was performed by using scanning microprobe x-ray photoelectron spectroscopy, and the main constituents of GaAs anodic oxide were determined to be Ga2O3 and As2O3. The electrical characterization showed that the electron transport across a GaAs oxide nanodot of ˜5.7 nm thickness, from a doped n+-Si tip into the n+-GaAs substrate follows the Fowler-Nordheim tunneling mechanism over a range of applied bias. Further, the tip-generated GaAs oxide nanodots were found to withstand moderate thermal treatments, but some volume reduction was observed.

  13. GaAs QWIP Array Containing More Than a Million Pixels

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

    2005-01-01

    A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

  14. Supplementation with Guanidinoacetic Acid in Women with Chronic Fatigue Syndrome

    PubMed Central

    Ostojic, Sergej M.; Stojanovic, Marko; Drid, Patrik; Hoffman, Jay R.; Sekulic, Damir; Zenic, Natasa

    2016-01-01

    A variety of dietary interventions has been used in the management of chronic fatigue syndrome (CFS), yet no therapeutic modality has demonstrated conclusive positive results in terms of effectiveness. The main aim of this study was to evaluate the effects of orally administered guanidinoacetic acid (GAA) on multidimensional fatigue inventory (MFI), musculoskeletal soreness, health-related quality of life, exercise performance, screening laboratory studies, and the occurrence of adverse events in women with CFS. Twenty-one women (age 39.3 ± 8.8 years, weight 62.8 ± 8.5 kg, height 169.5 ± 5.8 cm) who fulfilled the 1994 Centers for Disease Control and Prevention criteria for CFS were randomized in a double-blind, cross-over design, from 1 September 2014 through 31 May 2015, to receive either GAA (2.4 grams per day) or placebo (cellulose) by oral administration for three months, with a two-month wash-out period. No effects of intervention were found for the primary efficacy outcome (MFI score for general fatigue), and musculoskeletal pain at rest and during activity. After three months of intervention, participants receiving GAA significantly increased muscular creatine levels compared with the placebo group (36.3% vs. 2.4%; p < 0.01). Furthermore, changes from baseline in muscular strength and aerobic power were significantly greater in the GAA group compared with placebo (p < 0.05). Results from this study indicated that supplemental GAA can positively affect creatine metabolism and work capacity in women with CFS, yet GAA had no effect on main clinical outcomes, such as general fatigue and musculoskeletal soreness. PMID:26840330

  15. Supplementation with Guanidinoacetic Acid in Women with Chronic Fatigue Syndrome.

    PubMed

    Ostojic, Sergej M; Stojanovic, Marko; Drid, Patrik; Hoffman, Jay R; Sekulic, Damir; Zenic, Natasa

    2016-02-01

    A variety of dietary interventions has been used in the management of chronic fatigue syndrome (CFS), yet no therapeutic modality has demonstrated conclusive positive results in terms of effectiveness. The main aim of this study was to evaluate the effects of orally administered guanidinoacetic acid (GAA) on multidimensional fatigue inventory (MFI), musculoskeletal soreness, health-related quality of life, exercise performance, screening laboratory studies, and the occurrence of adverse events in women with CFS. Twenty-one women (age 39.3 ± 8.8 years, weight 62.8 ± 8.5 kg, height 169.5 ± 5.8 cm) who fulfilled the 1994 Centers for Disease Control and Prevention criteria for CFS were randomized in a double-blind, cross-over design, from 1 September 2014 through 31 May 2015, to receive either GAA (2.4 grams per day) or placebo (cellulose) by oral administration for three months, with a two-month wash-out period. No effects of intervention were found for the primary efficacy outcome (MFI score for general fatigue), and musculoskeletal pain at rest and during activity. After three months of intervention, participants receiving GAA significantly increased muscular creatine levels compared with the placebo group (36.3% vs. 2.4%; p < 0.01). Furthermore, changes from baseline in muscular strength and aerobic power were significantly greater in the GAA group compared with placebo (p < 0.05). Results from this study indicated that supplemental GAA can positively affect creatine metabolism and work capacity in women with CFS, yet GAA had no effect on main clinical outcomes, such as general fatigue and musculoskeletal soreness. PMID:26840330

  16. Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

    SciTech Connect

    Buckley, Sonia Radulaski, Marina; Vučković, Jelena; Biermann, Klaus

    2013-11-18

    We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

  17. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  18. Pseudo-Rhombus-Shaped Subwavelength Crossed Gratings of GaAs for Broadband Antireflection

    NASA Astrophysics Data System (ADS)

    Chen, Xi; Fan, Zhong-Chao; Zhang, Jing; Song, Guo-Feng; Chen, Liang-Hui

    2010-12-01

    Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist (PR) mask. Conventional dot PR mask is also generated, and both patterns are transferred into a underlying GaAs substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings (SWCGs) to mimic the moth-eye structure. In comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped GaAs SWCGs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%.

  19. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S.; Beskin, I.

    2014-05-05

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  20. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

    SciTech Connect

    Soshnikov, I. P.; Afanas'ev, D. E.; Cirlin, G. E.; Petrov, V. A.; Tanklevskaya, E. M.; Samsonenko, Yu. B.; Bouravlev, A. D.; Khrebtov, A. I.; Ustinov, V. M.

    2011-06-15

    The formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10-150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place.

  1. Lasing of TM modes in a two-dimensional GaAs microlaser.

    PubMed

    Fukushima, Takehiro; Shinohara, Susumu; Sunada, Satoshi; Harayama, Takahisa; Sakaguchi, Koichiro; Tokuda, Yasunori

    2014-05-19

    We fabricated and tested an unstrained GaAs single-quantum-well microlaser which has a two-dimensional cavity shape known as the Penrose unilluminable room. The cavity exhibits quasi-one-dimensional modes, namely axial, diamond-shaped, and V-shaped modes. In contrast to previous observations of TE-polarized emission in GaAs microlasers, we observed TM-polarized emission. We explain this observation as being the result of lasing of the diamond-shaped modes whose incident angle at the cavity interface is very close to the Brewster angle. PMID:24921312

  2. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa

    NASA Astrophysics Data System (ADS)

    Della Casa, Pietro; Maaßdorf, Andre; Zeimer, Ute; Weyers, Markus

    2016-01-01

    In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching of epitaxially-grown GaAs leads to the development of etch pits on the surface, corresponding to the emerging points of threading dislocations. Addition of trimethylgallium (TMGa) leads to a linear superposition of growth and etching. Trimethylaluminium (TMAl) added in moderate quantity enhances the etch rate and inhibits the development of etch pits. A model description for the enhanced etch rate is presented.

  3. A diffusion model for picosecond electron bunches from negative electron affinity GaAs photo cathodes

    SciTech Connect

    P. Hartmann; J. Bermuth; D. v. Harrach; J. Hoffmann; S. Kobis; E. Reichert; K. Aulenbacher; J. Schuler; M. Steigerwald

    1998-10-27

    Even though theoretical estimates predict response times for the photo emission process of electrons from a negative electron affinity GaAs photo emitter in excess of hundreds of picoseconds, recent measurements found electron bunch durations of 40 ps or less. This work presents precise measurements of picosecond electron bunches from a negative affinity bulk GaAs photo cathode and develops a model which explains the measured bunch durations as well as the observed bunch shapes. The bunch shape turns out to be independent from the quantum efficiency of the photo emitter.

  4. Ion back-bombardment of GaAs photocathodes inside dc high voltage electron guns

    SciTech Connect

    Joseph Grames; Philip Adderley; Joshua Brittian; Daniel Charles; James Clark; John Hansknecht; Benard Poelker; Marcy Stutzman; Kenneth Surles-law

    2005-05-01

    DC high voltage GaAs photoguns are key components at accelerator facilities worldwide. New experiments and new accelerator facilities demand improved performance from these guns, in particular higher current operation and longer photocathode operating lifetime. This conference submission explores bulk GaAs photocathode lifetime as a function of beam current, active photocathode area, laser spot size and the vacuum of the gun and beam line. Lifetime measurements were made at 100 microamps, a beam current relevant for accelerators like CEBAF, and at beam currents of 1 milliamps and 5 milliamps, a regime that is interesting for high current Free Electron Laser (FEL) and Energy Recovery Linac (ERL) operation.

  5. 6 to 18 GHz GaAs FET/MMIC amplifiers provide 1 W saturated output

    NASA Astrophysics Data System (ADS)

    Bybokas, Jim

    1987-05-01

    The paper describes the construction and performance characteristics of three amplifiers that combine GaAs FETs, GaAs MMICs, and thin-film hybrid construction and can provide more than 1 W of saturated output power over the 6 to 18 GHz frequency range. These amplifiers feature minimum gains of 26, 34, and 42 dB and noise figures of 13, 10, and 9 dB, respectively, and are specified for operation over the 0 to +50 C temperature range. Amplifier block diagram is included.

  6. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Abere, Michael J.; Torralva, Ben; Yalisove, Steven M.

    2016-04-01

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350-400 nm tall and ˜90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  7. Behavior of Cu and Zn Impurities on GaAs Wafer Surfaces

    NASA Astrophysics Data System (ADS)

    Shibaya, Hiroshi

    1995-08-01

    Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.

  8. Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

    PubMed Central

    2010-01-01

    Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties. By adjusting the InGaAs coverage, both one-dimensional and two-dimensional lateral ordering of InGaAs/GaAs(210) nanostructures are achieved. PMID:20676193

  9. Single crystal and polycrystalline GaAs solar cells using AMOS technology

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1976-01-01

    A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

  10. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    SciTech Connect

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki; Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi; Kuboya, Shigeyuki; Onabe, Kentaro; Katayama, Ryuji

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  11. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

    SciTech Connect

    Simonsmeier, T.; Ivankov, A.; Bauhofer, W.

    2005-04-15

    We report on a remarkable enhancement of the passivation effect of sulfidic solutions through illumination with above band gap light. Luminescence measurements on GaAs surfaces which have been illuminated during chemical passivation reveal in comparison to nonilluminated samples a further reduction of their surface density of states as well as a significantly increased stability of the passivation. Investigations with photoelectron spectroscopy show that illumination leads to a nearly complete removal of oxides on the surface. Measurements on Schottky diodes which have been manufactured with photochemically passivated GaAs indicate a noticeable decrease in band bending and a depinning of the Fermi level.

  12. A thermochemical model of radiation damage and annealing applied to GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

    1981-01-01

    Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

  13. Ferroelectric Pb(Zr,Ti)O{sub 3} epitaxial layers on GaAs

    SciTech Connect

    Louahadj, L.; Le Bourdais, D.; Agnus, G.; Pillard, V.; Lecoeur, P.; Largeau, L.; Mazet, L.; Bachelet, R.; Regreny, P.; Dubourdieu, C.; Gautier, B.; Saint-Girons, G.; Albertini, D.

    2013-11-18

    Ferroelectric epitaxial Pb(Zr,Ti)O{sub 3} (PZT) layers were grown by pulsed laser deposition on SrTiO{sub 3}/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO{sub 3}/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c-domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

  14. Comparison of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Heitzinger, John M.; Jackson, M. S.; Ekerdt, J. G.

    1995-01-01

    The surface chemistry of triethylaluminum, triethylgallium, triethylindium, and triethylantimony was studied on GaAs(100) using thermal desorption spectroscopy, static secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy. Ethylene, the major hydrocarbon reaction product, desorbs from the GaAs(100) surface during thermal desorption spectroscopy experiments at 565 K for all four molecules. This indicates an identical rate limiting step for the elimination of ethyl groups from the surface following adsorption of these molecules. We propose that ethyl groups migrate to Ga sites and then undergo reaction at these sites.

  15. GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation

    NASA Technical Reports Server (NTRS)

    Crowe, T. W.; Peatman, W. C. B.; Winkler, E.

    1991-01-01

    The development of GaAs Schottky barrier diodes for frequencies well into the submillimeter wavelength range is discussed. These devices have the highest cutoff frequencies yet obtained for varactor diodes and have produced sufficient output power to drive Schottky mixers at frequencies as high as 640 GHz. The fundamental design tradeoff between cutoff frequency and capacitance modulation is explored. As the doping density is increased and the anode diameter is reduced, the dynamic cutoff frequency increases, reaching a maximum of roughly 5 THz. It is concluded that the maximum output frequency from harmonic multipliers based on standard GaAs varactor diodes will be about 1 THz.

  16. InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

    SciTech Connect

    Lee, J. H.; Wang, Zh. M.; Strom, N. W.; Mazur, Yu. I.; Salamo, G. J.

    2006-11-13

    Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

  17. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  18. Helicity-dependent photocurrent in a (110) GaAs quantum well stack

    NASA Astrophysics Data System (ADS)

    Schmadel, D. C.; Kim, M.-H.; Sushkov, A. B.; Jenkins, G. S.; Koralek, J. D.; Moore, J. E.; Orenstein, J.; Ohno, Yuzo; Ohno, Hideo; Drew, H. D.

    2013-03-01

    There have been many reports on the circular photogalvanic effect (CPGE) in GaAs quantum wells. A recent theoretical study suggests that the CPGE can be governed by a quantum confinement-induced Berry phase effect that depends only on the quantum-well width and crystal orientation (J.E. Moore, Phys. Rev. Lett. 2010). We have measured the photocurrent in a (110)-oriented GaAs quantum well stack under illumination of circularly polarized THz radiation. We will report measurements of the helicity-driven photocurrent as a function of frequency, polarization, angle of incident, and temperature, and compare with theoretical predictions of the Berry phase contribution.

  19. The OAs defect in GaAs: A hybrid density functional study

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Pasquarello, Alfredo

    2014-02-01

    The O center substitutional to As (OAs) is addressed through hybrid functional calculations as a candidate defect to explain the Fermi-level pinning in oxygen-doped GaAs. The defect center shows amphoteric behavior which could lead to Fermi-level pinning. However, the calculated charge transition levels only moderately agree with the experimental pinning level. Furthermore, the first-neighbor shell of the O atom and the absence of negative-U behavior clearly contrast with the experimental characterization. Thus, the present results do not support the OAs center as origin of the observed Fermi-level pinning in oxygen-doped GaAs.

  20. Adjunctive β2-agonist treatment reduces glycogen independently of receptor-mediated acid α-glucosidase uptake in the limb muscles of mice with Pompe disease.

    PubMed

    Farah, Benjamin L; Madden, Lauran; Li, Songtao; Nance, Sierra; Bird, Andrew; Bursac, Nenad; Yen, Paul M; Young, Sarah P; Koeberl, Dwight D

    2014-05-01

    Enzyme or gene replacement therapy with acid α-glucosidase (GAA) has achieved only partial efficacy in Pompe disease. We evaluated the effect of adjunctive clenbuterol treatment on cation-independent mannose-6-phosphate receptor (CI-MPR)-mediated uptake and intracellular trafficking of GAA during muscle-specific GAA expression with an adeno-associated virus (AAV) vector in GAA-knockout (KO) mice. Clenbuterol, which increases expression of CI-MPR in muscle, was administered with the AAV vector. This combination therapy increased latency during rotarod and wirehang testing at 12 wk, in comparison with vector alone. The mean urinary glucose tetrasaccharide (Glc4), a urinary biomarker, was lower in GAA-KO mice following combination therapy, compared with vector alone. Similarly, glycogen content was lower in cardiac and skeletal muscle following 12 wk of combination therapy in heart, quadriceps, diaphragm, and soleus, compared with vector alone. These data suggested that clenbuterol treatment enhanced trafficking of GAA to lysosomes, given that GAA was expressed within myofibers. The integral role of CI-MPR was demonstrated by the lack of effectiveness from clenbuterol in GAA-KO mice that lacked CI-MPR in muscle, where it failed to reverse the high glycogen content of the heart and diaphragm or impaired wirehang performance. However, the glycogen content of skeletal muscle was reduced by the addition of clenbuterol in the absence of CI-MPR, as was lysosomal vacuolation, which correlated with increased AKT signaling. In summary, β2-agonist treatment enhanced CI-MPR-mediated uptake and trafficking of GAA in mice with Pompe disease, and a similarly enhanced benefit might be expected in other lysosomal storage disorders. PMID:24448824

  1. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    PubMed

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers. PMID:18264312

  2. Low-temperature-grown GaAs enhanced wet thermal oxidation of Al0.98Ga0.02As

    NASA Astrophysics Data System (ADS)

    Reese, H.; Chiu, Y. J.; Hu, E.

    1998-11-01

    The effects of incorporating low-temperature-grown GaAs (LT GaAs) into the layer structure of Al0.98Ga0.02As/GaAs are studied. Results show that the structures containing a 300 nm layer of LT GaAs have faster oxidation rates and lower oxidation temperatures compared to reference samples without the LT GaAs layer. This letter will discuss the mechanisms involved in the oxidation rate increase, attributed to the LT GaAs enhancing the transport of As species during the oxidation process.

  3. Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs

    NASA Astrophysics Data System (ADS)

    Homan, Otte J.; Epler, John E.; Patterson, Bruce D.; Lehmann, Hans W.

    1994-07-01

    Aluminum-oxide thermally grown into high Al-concentration AlxGa1-xAs layers has recently been studied extensively. The material shows electrical and optical properties that make it useful in a semiconductor laser fabrication process where it can provide electrical isolation and optical guiding, as well as simplify the fabrication and integration process considerably. We use this thermal oxide to produce GaAs/AlGaAs semiconductor lasers that can be integrated with other devices. The GaAs cap- layer is masked with photoresist and the exposed GaAs areas are etched away, leaving a GaAs oxidation mask on the AlGaAs upper cladding layer. Using N2 carrier gas saturated with H2O vapor, the uncovered Al0.8Ga0.2As material is converted into a stable aluminum-oxide at temperatures around 450 degree(s)C. Due to the near-isotropic oxidation an `ellipsoidal' diffusion front is created, which is in strong contrast to the well-known mesa cross-section in conventional dry-etched ridge-waveguides but is more similar to e.g. wet-etched buried heterostruture lasers.

  4. Bandgap and optical absorption edge of GaAs1-xBix alloys with 0 < x < 17.8%

    NASA Astrophysics Data System (ADS)

    Masnadi-Shirazi, M.; Lewis, R. B.; Bahrami-Yekta, V.; Tiedje, T.; Chicoine, M.; Servati, P.

    2014-12-01

    The compositional dependence of the fundamental bandgap of pseudomorphic GaAs1-xBix layers on GaAs substrates is studied at room temperature by optical transmission and photoluminescence spectroscopies. All GaAs1-xBix films (0 ≤ x ≤ 17.8%) show direct optical bandgaps, which decrease with increasing Bi content, closely following density functional theory predictions. The smallest measured bandgap is 0.52 eV (˜2.4 μm) at 17.8% Bi. Extrapolating a fit to the data, the GaAs1-xBix bandgap is predicted to reach 0 eV at 35% Bi. Below the GaAs1-xBix bandgap, exponential absorption band tails are observed with Urbach energies 3-6 times larger than that of bulk GaAs. The Urbach parameter increases with Bi content up to 5.5% Bi, and remains constant at higher concentrations. The lattice constant and Bi content of GaAs1-xBix layers (0 < x ≤ 19.4%) are studied using high resolution x-ray diffraction and Rutherford backscattering spectroscopy. The relaxed lattice constant of hypothetical zincblende GaBi is estimated to be 6.33 ± 0.05 Å, from extrapolation of the Rutherford backscattering spectrometry and x-ray diffraction data.

  5. Supplementation of guanidinoacetic acid to broiler diets: effects on performance, carcass characteristics, meat quality, and energy metabolism.

    PubMed

    Michiels, J; Maertens, L; Buyse, J; Lemme, A; Rademacher, M; Dierick, N A; De Smet, S

    2012-02-01

    Creatine, (CREA) a central constituent in energy metabolism, is obtained from dietary animal protein or de novo synthesis from guanidinoacetic acid (GAA). Especially in all-vegetable diets, supplemental CREA or GAA may restore the CREA availability in tissues, and hence, improve performance. In this study, 768 one-d-old male Ross 308 broilers were assigned to 1 of 4 diets: negative control, all-vegetable corn-soybean-based; negative control supplemented with either 0.6 or 1.2 g of GAA per kilogram of feed; and positive control (60, 30, and 30 g/kg of fish meal in the starter, grower, and finisher diets, respectively). Each treatment was replicated in 6 pens of 32 birds each. At the end of the grower period (d 26), 2 birds per pen were euthanized for metabolic measurements. Four broilers per pen were selected at slaughter age (d 39) to determine carcass characteristics and meat quality. Compared with the negative control, GAA supplementation resulted in an improved gain:feed ratio (P < 0.05) and ADG (P < 0.05; + 2.7 and + 2.2% for GAA at 0.6 and 1.2 g/kg, respectively) throughout the entire period. Breast meat yield was higher for the GAA diets compared with that of the negative control birds (P < 0.05; 30.6 vs. 29.4%) and was comparable with that of the positive control birds (30.2%). With regard to meat quality, lower ultimate pH values, higher cooking and press fluid losses, and higher color L* values were observed for the GAA diets compared with those of the negative control diet (P < 0.05). These effects were small, however. The GAA and CREA levels in breast meat were lower and higher, respectively, in GAA-fed birds compared with those of the control birds (P < 0.01). The diets did not affect plasma metabolic traits, except that plasma insulin-like growth factor I concentrations were almost twice as high in animals fed 1.2 g/kg of GAA compared with those of all other treatments. The GAA included in all-vegetable diets improved animal performance for the whole

  6. Direct electron beam writing of gallium oxide on GaAs(111) As surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Sacedón, J. L.; Soria, F.

    1984-07-01

    In this letter we show the possibility of a direct electron beam writing on GaAs (111) As by electron stimulated oxidation. An estimate of the writing velocity is also given. The analysis of the profiles of the oxide spots by Auger spectroscopy indicates the stability of the gallium oxide formed, and the post-oxidation formation of an As-rich interface.

  7. DFT algorithms for bit-serial GaAs array processor architectures

    NASA Technical Reports Server (NTRS)

    Mcmillan, Gary B.

    1988-01-01

    Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

  8. Modified energetics and growth kinetics on H-terminated GaAs (110)

    NASA Astrophysics Data System (ADS)

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Lorbek, S.; Hlawacek, G.; Teichert, C.; Tejedor, P.

    2013-10-01

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  9. Investigation of spectral responsivity of InAs QD-embedded GaAs solar cells

    NASA Astrophysics Data System (ADS)

    Bailey, Christopher G.; Forbes, David V.; Raffaelle, Ryne P.; Hubbard, Seth M.

    2011-02-01

    GaAs p-i-n solar cells embedded with varying number of QD layers (0-60) were grown by OMVPE. 1x1 cm2 cells were fabricated and standard solar cell testing was performed. Illuminated AM0 current-voltage characteristics were measured of both a baseline and 10-layer quantum dot (QD) embedded GaAs p-i-n. The QD solar cell (QDSC) gave an short circuit current of 23.1 mA/cm2 increase in of 0.7mA/cm2 above the baseline with no QDs. The QD embedded cell also showed limited loss in open circuit voltage characteristics of 0.99 V compared to 1.04 V of the baseline. Conversion efficiencies were 13.4 and 13.8 for the QDSC and baseline solar cell, respectively. Spectral responsivity measurements revealed equivalent GaAs response in the visible for the baseline, 10x and 20x layer QD samples, while systematically degraded emitter lifetime was found to be responsible for loss in visible responsivities for the 60x QDSC. Sub-GaAs bandgap response gave a systematic increase of 0.25 mA/QD layer. Spectral responsivity modeling was used and found that bulk GaAs emitter and i-region lifetimes degraded from 102 ns to 102 ps, with increasing number of QD layers.

  10. Generation of terahertz radiation in ordered arrays of GaAs nanowires

    SciTech Connect

    Trukhin, V. N.; Mustafin, I. A.; Bouravleuv, A. D.; Cirlin, G. E.; Kakko, J. P.; Huhtio, T.; Lipsanen, H.

    2015-06-22

    THz generation under excitation by ultrashort optical pulses in ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz radiation generation increases due to the resonant leaky mode excitation in nanowires. The maximum value of the THz field is achieved when the distance between the nanowires is of the order of the wavelength of exciting light.

  11. Macromodel for exact computation of propagation delay time in GaAs and CMOS technologies

    NASA Astrophysics Data System (ADS)

    Garcia, Jose C.; Montiel-Nelson, Juan A.; Sosa, Javier; Navarro, Hector; Sarmiento, Roberto

    2003-04-01

    A new transient macromodel for the cells used in DCFL GaAs and CMOS digital design is introduced in this paper. The numerical solution determines accurate propagation delay times. The macromodel is based on the differential equation for the output voltage in terms of currents and capacitances. An straightforward treatment of the differential equation for an inverter in DCFL GaAs and CMOS has been obtained. It could be resolved numerically by a 4th order Runge Kutta method. Good agreement is obtained between the HSPICE simulation and the computation of the propagation delays for DCFL GaAs and CMOS basic gates: INV, NOR, OR and NAND. There is no error between HSPICE and our computation of propagation delay time for the high to low (tphl) and low to high (tplh) transitions. The propagation delay times for two types of transition were measured and compared with HSPICE. The results demonstrate that our approach matches with HSPICE with no error. The numerical method was programmed in C language. In addition, computation time analysis is provided and numerical solution is several orders of magnitude faster than HSPICE. Work is in progress to obtain the macromodel of a standard cell library for digital application both for a 0.6 microns E/D GaAs process (H-GaAsIV) from Vitesse Semiconductor and for a 0.18 microns logic/mixed-signal CMOS process (1P6M) from TSMC Corp.

  12. Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

    NASA Astrophysics Data System (ADS)

    Fauzi, D. Ahmad; Rashid, N. K. A. Md; Karim, J. Abdul; Zin, M. R. Mohamed; Hasbullah, N. F.; Sheik Fareed, O. A.

    2013-12-01

    This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-voltage (C-V) measurements using Keithley 4200 SCS. Two different commercial optoelectronics diodes; GaN on SiC light emitting diode (LED) and GaAs infrared emitting diode (IRED) were radiated with neutron using pneumatic transfer system (PTS) in the PUSPATI TRIGA Mark II research reactor under total neutron flux of 1×1012 neutron/cm2.s. Following the neutron exposure for 1, 3 and 5 minutes, the I-V forward bias and reverse bias leakage current increase for GaAs IREDs, but minimal changes were observed in the GaN LEDs. The C-V measurements revealed that the capacitance and carrier concentration of GaAs IREDs decrease with increasing radiation flux.

  13. Performance of a wideband GaAs low-noise amplifier at cryogenic temperatures

    NASA Technical Reports Server (NTRS)

    Toncich, S. S.; Bhasin, K. B.; Chen, T. K.; Claspy, P. C.

    1992-01-01

    The gain and noise figure performance of a GaAs amplifier at cryogenic temperatures has been studied. Results obtained indicate that a lower noise figure and a higher gain are induced by decreasing the temperature, while no significant change in the input 1-dB compression point is observed. Repeated temperature cycling had no adverse effect on the amplifier performance.

  14. 2D-ACAR Studies on Swift Heavy Ion Si-Implanted GaAs

    NASA Astrophysics Data System (ADS)

    Sivaji, K.; Selvakumar, S.

    Material properties modification by high energy heavy ion implantation is a prospective technology leading to many device fabrications. This technique induces defects and hence the physical properties of the materials are modified. The effects of swift heavy ion implantation induced defects by 120 MeV 28+Si ion implantation and doping in SI-GaAs are presented from the electron momentum distribution (EMD) of vacancy-type defects studied by two-dimensional angular correlation of annihilation radiation (2D-ACAR). The positron trapping due to the influence of high-energy Si- implantation in GaAs (n-type) is compared with the corresponding spectra of SI- GaAs and with Si-doped (n-type) GaAs. The EMD of the implanted sample shows a distinct increased isotropic distribution with a characteristic transform of its structure as evident from the low momentum region compared to the pristine sample. The characteristics of defects created by Si doping and by 120 MeV 28+Si ion implantation of undoped semi-insulating (SI) GaAS are discussed. These results indicate the nature of positron trapping in open volume defects such as vacancy clusters created by implantation.

  15. Amphoteric behavior of Ge in GaAs: an LDA analysis

    NASA Astrophysics Data System (ADS)

    Giorgi, G.; Yamashita, K.

    2011-04-01

    We have studied the stability of neutral and charged Ge substitutional defects (donor, acceptor and molecular) in bulk GaAs host. To correct the severe underestimation given by the local density approximation (LDA) in predicting bandgaps, we have applied the LDA + U scheme (Dudarev et al 1998 Phys. Rev. B 57 1505) to the gallium d orbitals. We have aligned the LDA calculated band edges of GaAs to those calculated at LDA + U level. Then, we have corrected the thermal ionization energies (LDA derived) for the defects considered. The effect of atomic distance in the self-compensation mechanism in the case of Ge2 donor-acceptor defective cells was evaluated. Our results are compared with previous results on IV-doped III-V alloys. We found that self-passivation is the main mechanism for the thermodynamic stabilization of both defective cells and alloys. We have established a relationship between the energy of stabilization versus (1) the amount of molecular Ge2 in the alloys and (2) the distance between Ge donor-acceptor atoms in the supercells, finding an almost linear relationship. We conclude that Ge2-doped GaAs defective systems behave as extremely diluted (GaAs)1-xGe2x alloys (x → 0).

  16. Does Bi form clusters in GaAs1 - xBi x alloys?

    NASA Astrophysics Data System (ADS)

    Punkkinen, M. P. J.; Laukkanen, P.; Kuzmin, M.; Levämäki, H.; Lång, J.; Tuominen, M.; Yasir, M.; Dahl, J.; Lu, S.; Delczeg-Czirjak, E. K.; Vitos, L.; Kokko, K.

    2014-11-01

    GaAs1 - xBi x alloys attract significant interest due to their potentiality for several applications, including solar cells. Recent experiments link the crucial optical properties of these alloys to Bi clustering at certain Bi compositions. Using ab initio calculations, we show that there is no thermodynamical driving force for the formation of small GaBi clusters incorporating As substitutional sites. However, the Ga vacancies should gather Bi atoms leading to small Bi clusters, and the Ga vacancies can act as nucleation centers for phase separation. The formation energy of the GaAs1 - xBi x with respect to GaAs and GaBi shows a maximum at intermediate Bi concentrations. Thermodynamics and kinetics of the GaAs1 - xBi x film growth is discussed. High Bi solubility is obtained, if the Bi atoms on the energetically favorable atom positions in the subsurface layer are relatively frozen. The Ga vacancy concentration may be increased by the incorporation of Bi. The Bi atoms can also prevent the out diffusion of Ga vacancies.

  17. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    PubMed

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices. PMID:26284305

  18. SEU of complementary GaAs static RAMs due to heavy ions

    NASA Technical Reports Server (NTRS)

    Zuleeg, R.; Notthoff, J. K.; Nichols, D. K.

    1984-01-01

    The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.

  19. Optimum doping achieves high quantum yields in GaAs photoemitters

    NASA Technical Reports Server (NTRS)

    Sonnenberg, H.

    1971-01-01

    Experimental data indicate that optimum doping exists. Measured quantum yield curves indicate optimum overall response is obtained in GaAs emitters with doping in high 10 to the 18th power per cu cm range. Doping for optimum response is not necessarily in this range.

  20. Modified energetics and growth kinetics on H-terminated GaAs (110)

    SciTech Connect

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

    2013-10-28

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  1. Surface analysis of different oriented GaAs substrates annealed under bismuth flow

    NASA Astrophysics Data System (ADS)

    Fitouri, H.; Moussa, I.; Rebey, A.; El Jani, B.

    2007-03-01

    Several orientations of GaAs substrates, including (1 0 0), (4 1 1), (1 1 1) and (5 1 1) have been annealed in a metalorganic vapour phase epitaxy (MOVPE) horizontal reactor at different annealing temperatures and under different trimethyl-bismuth (TMBi) flux. Surface morphology of the annealed GaAs substrates was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show islands formation on all the studied samples. The density and size of Bi islands vary greatly with annealing temperature and TMBi flow. For different substrate orientations, the activation energies were deduced from Arrhenius plot of island density. Except for (5 1 1) oriented GaAs, all the studied orientations show the same activation energy of 1.8 eV. For low annealing temperature 420 °C, and under different Bi flux, each oriented substrate shows a specific behaviour. For higher temperatures 700 °C and above Bi islands are totally removed and the substrates are smooth. Surface change of (1 0 0) oriented GaAs substrate was in situ monitored by laser reflectometry.

  2. Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate

    SciTech Connect

    Alekseev, P. A. Dunaevskii, M. S.; Stovpyaga, A. V.; Lepsa, M.; Titkov, A. N.

    2012-05-15

    A convenient and fast method for measuring Young's modulus of semiconductor nanowires obliquely standing on the growth substrate is presented. In this method, the nanowire is elastically bent under the force exerted by the probe of an atomic-force microscope, and the load-unload dependences for the bending of the probe cantilever are recorded. Next, these curves are used to find the bending stiffness of the tilted nanowires, after which, taking into account the nanowire dimensions, Young's modulus is obtained. The implementation of this method is demonstrated for tilted GaAs nanowires growing on a GaAs (111) substrate. Young's modulus is determined by applying finite-element analysis to the problem of the stationary elastic bending of a nanowire taking into account the actual nanowire shape and faceting. It proves that a fairly accurate estimate of Young's modulus can be obtained even if the nanowire shape is approximated by a circular cylinder with a single cross-sectional area. The values of Young's modulus obtained for GaAs nanowires of cubic lattice symmetry are 2 to 3 times smaller than its value for bulk GaAs. This difference is attributed to the presence of stacking faults in the central part of the nanowires.

  3. Langley program of GaAs solar cells. [emphasizing energy conversion efficiency and radiation resistance

    NASA Technical Reports Server (NTRS)

    Conway, E. J.

    1979-01-01

    A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.

  4. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  5. Cryogenic operation of GaAs based multiplier chains to 400 GHz

    NASA Technical Reports Server (NTRS)

    Maestrini, A.; Pukala, D.; Maiwald, F.; Schlecht, E.; Chattopadhyay, G.; Mehdi, I.

    2000-01-01

    The FIRST/HIFI mission allows for the local oscillator frequency multiplier chains to be cooled to 120 - 150 K in order to increase available output power. This paper will discuss the implication of cooling on GaAs based planar Schottky diode varactors for flight applications.

  6. Design of quantum efficiency measurement system for variable doping GaAs photocathode

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Yang, Kai; Liu, HongLin; Chang, Benkang

    2008-03-01

    To achieve high quantum efficiency and good stability has been a main direction to develop GaAs photocathode recently. Through early research, we proved that variable doping structure is executable and practical, and has great potential. In order to optimize variable doping GaAs photocathode preparation techniques and study the variable doping theory deeply, a real-time quantum efficiency measurement system for GaAs Photocathode has been designed. The system uses FPGA (Field-programmable gate array) device, and high speed A/D converter to design a high signal noise ratio and high speed data acquisition card. ARM (Advanced RISC Machines) core processor s3c2410 and real-time embedded system are used to obtain and show measurement results. The measurement precision of photocurrent could reach 1nA, and measurement range of spectral response curve is within 400~1000nm. GaAs photocathode preparation process can be real-time monitored by using this system. This system could easily be added other functions to show the physic variation of photocathode during the preparation process more roundly in the future.

  7. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  8. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    SciTech Connect

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  9. Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs

    NASA Astrophysics Data System (ADS)

    Sato, Kenji; Ikoma, Hideaki

    1993-02-01

    Internal photoemission and X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the effect of sulfur passivation on the GaAs surface and the degradation of the GaAs surface exposed to air ambient after the passivation. The reverse bias dependence of the Schottky barrier height was very small in the as-sulfur-treated sample and was mainly explained by the image force lowering effect. However, it increased as this sample was exposed to air, indicating an increase in the interface state density. The XPS studies showed that both the Ga and As oxides were hardly observed in the sulfur-passivated samples. This indicates that sulfur passivation strongly suppresses oxidation of GaAs. However, a small amount of elemental arsenic was observed with a trace of the As suboxides (such as AsO) after exposure to air and it increased as the exposure time was increased. These results were probably correlated with the increase in the bias dependence of the Schottky barrier height in samples exposed to air after the passivation. Thermal oxidation of GaAs was found to be retarded by sulfur passivation until oxidation time was about 10 min at 300°C. A possible model of suppression of oxidation by sulfur passivation was also discussed.

  10. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  11. Thermal oxidation of In/sub 2/S/sub 3//GaAs structures

    SciTech Connect

    Mittova, Ya.; Pukhova, V.V.

    1986-11-01

    The purpose of this work is to investigate the effect of indium sulfide, deposited on the surface of GaAs, on the process of oxidation of gallium arsenide, as well as on the composition and some properties of the oxide layers formed.

  12. Neutron damage equivalence for silicon, silicon dioxide, and GaAs

    NASA Astrophysics Data System (ADS)

    Luera, Theodore F.; Kelly, John G.; Stein, Herman J.; Lazo, Maximo S.; Lee, Clarence E.

    1987-12-01

    Displacement-energy and ionization-energy transfers to Si, SiO2, and GaAs as functions of incident neutron energy were calculated using cross-section data and fine group structure in the NJOY code system. Neutron spectra determinations for several reactor neutron environments were made using activation cross sections and a novel technique with the SAND II code. Measurements of carrier-removal rates in GaAs and of Si transistor gain degradation were made in representative neutron environments. Experimental results are compared to damage ratios predicted with the spectra and NJOY displacement functions. For fission-like spectra, calculated Si damage ratios are in good agreement with those determined with ASTM E722-85 and with measured transistor damage ratios. Significant differences are found between Si NJOY and ASTM E722-85 for 14-MeV-to-reactor neutron damage ratios; NJOY gives better agreement with experimental data reported in the literature. In GaAs, 14-MeV-to-reactor experimental damage ratios are smaller than predicted by calculated displacement ratios. This suggests that a more complex model of damage for majority carrier removal in GaAs is required. The use of incorrect damage functions is shown to adversely affect simulation fidelity in some representative neutron environments.

  13. Effect of electron flux on radiation damage in GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Loo, R. Y.; Kamath, G. S.; Knechtli, R. C.

    1982-01-01

    The objective of this work was to evaluate the effect of electron flux and temperature on radiation damage in GaAs solar cells. The defect levels and the power ratio of the GaAs solar cells under various irradiation conditions are compared. In a 200 C continuous annealing experiment, the GaAs solar cells which were irradiated at a flux of 2 x 10 to the 9th e/sq cm s suffered less power degradation than the cells which were irradiated at the same temperature at a higher flux of 4 x 10 to the 10th e/sq cm s. After the continuous annealing experiment, a single-step post annealing at 200 C was performed for 40 hr on these irradiated cells. An additional improvement in power recovery was observed only on those cells irradiated at the high flux of 4 x 10 to the 10th e/sq cm s. DLTS data indicate that the defect density decreases with lower electron flux. Both of these observations strongly suggest that the continuous annealing in GaAs cells can be effective at temperatures as low as 150 C, or even less in a space environment such as geosynchronous orbit.

  14. Design and optimization of GaAs photovoltaic converter for laser power beaming

    NASA Astrophysics Data System (ADS)

    Shan, Tiqiang; Qi, Xinglin

    2015-07-01

    GaAs photovoltaic (PV) converters are useful for the conversion of monochromatic light into electrical power in numerous military and industrial applications. The work of this paper is to design a monochromatic GaAs PV converter for coupling to laser beams in the wavelength of 790-840 nm and optimize its structure, layer thicknesses, doping levels of the emitter and base, and antireflection coating. Modeling calculations of the GaAs PV converter optimization are carried out using PC-1D. From the highest efficiency point of view, the best wavelength is 840 nm at which the optimized structure gives an efficiency of 61.8% theoretically. Experiment results under 808 nm laser power beaming show that high optical-to-electrical conversion efficiency of 53.23% at 5 W/cm2 is achieved using the optimized GaAs PV laser converter. Finally, accurate extraction of the key parameters, viz. the ideality factor, reverse saturation current, series resistance and shunt resistance is introduced. Variations of these parameters with illumination intensity are also investigated analytically based on the one diode model, which are necessary for the design of a high performance PV generation system.

  15. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A.; Zvonkov, B. N.; Kudryavtsev, K. E.; Nekorkin, S. M.

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  16. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  17. On the cascade capture of electrons at donors in GaAs quantum wells

    SciTech Connect

    Aleshkin, V. Ya.

    2015-09-15

    The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

  18. Effects of surface passivation on twin-free GaAs nanosheets.

    PubMed

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation. PMID:25565000

  19. Low Temperature Photoluminescence Kinetics of Double-Ring Structured GaAs Quantum Dots.

    PubMed

    Myoung, Soung; Mun, Ok Mi; Yim, Sang-Youp; Kim, Jong Su

    2015-11-01

    This work is focused on spectroscopically characterizing kinetic properties of concentric quantum-ring complexes of GaAs quantum dots. Quantum-ring (or double-ring) GaAs quantum dots, embedded in an Al0.3Ga0.7As barrier layer, were grown by a droplet epitaxy method during molecular beam epitaxy on a GaAs (001) substrate. Emission peaks of photoluminescence spectra with different excitation power, were measured as 702 nm at 0.17 mW and 690 nm at 400 mW, were blue-shifted as the excitation power increased. In addition, excitation laser power dependence of time-resolved photoluminescence of double-ring GaAs quantum dots at 10 K under 400 nm excitation wavelength was performed, revealing that photoluminescence lifetime slowly decreased in comparison to that of single disc-like quantum dots as excitation power increased, implying that carrier transfer between inner ring and outer ring could slow down the decay process. The luminescence lifetime at 10 K increased from 245 to 409 ps in the range from 0.17 to 400 mW of excitation power. PMID:26726575

  20. Early administration of enzyme replacement therapy for Pompe disease: short-term follow-up results.

    PubMed

    Hamdan, M A; Almalik, M H; Mirghani, H M

    2008-12-01

    Pompe disease (glycogen storage disease II, OMIM # 232300), is a hereditary lysosomal disorder. It is characterized by deficiency of acid alpha-glucosidase enzyme (acid maltase, GAA, OMIM *606800, EC 3.1.26.2), secondary to mutations in the GAA gene (HGNC:4065) on chromosome 17q25.2-q25.3. Absent enzyme activity in the infantile form of Pompe disease results in abnormal glycogen deposition in the skeletal, cardiac, and smooth muscles, leading to hypertrophic cardiomyopathy, feeding abnormalities, hypotonia, weakness, respiratory insufficiency, and ultimately death. Prenatal diagnosis is accomplished by enzyme assay, mutation analysis or electron microscopy of amniotic fluid cells or chorionic villus sample. However, these techniques may not always be available, and can result in perinatal morbidity and fetal loss. Early diagnosis of Pompe disease results in early institution of enzyme replacement therapy (ERT), which minimizes morbidity and prolongs survival. We report the case of a 35-week part-of-twin neonate, whose older sibling died earlier because of infantile Pompe disease. At 32 weeks of gestation, fetal echocardiography showed hypertrophic cardiomyopathy in twin 1, which persisted until birth at 35 weeks of gestation. Diagnosis was confirmed after birth by enzyme assay, and mutation analysis showing homozygosity for the sequence change 1327-2A>G (GAA intr 8). Administration of ERT at 18 h of age, resulted in normalization of cardiac abnormalities within 21 weeks of therapy, and normal neurodevelopmental assessment at 46 weeks, using Griffiths Mental Development Scales. To our knowledge, this is the youngest patient reported to receive ERT for Pompe disease, and the first report of prenatal diagnosis of Pompe disease by fetal echocardiography. PMID:19067231

  1. Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs

    NASA Astrophysics Data System (ADS)

    Jacobsen, Heather; Puchala, Brian; Kuech, Thomas F.; Morgan, Dane

    2012-08-01

    The thermodynamics of Bi incorporation into bulk and epitaxial GaAs was studied using density functional theory (DFT) and anharmonic elasticity calculations. The equilibrium concentration of Bi was determined as a function of epitaxial strain state, temperature, and growth conditions. For a bulk, unstrained system, Bi in GaAs under typical growth conditions (Ga-rich and Bi-metal-rich at 400 °C) has a dilute heat of solution of 572 meV/Bi and a solubility of x=5.2×10-5 in GaAs1-xBix. However, epitaxial strain can greatly enhance this solubility, and under the same conditions an epitaxial film of GaAs1-xBix with 5% in-plane tensile strain is predicted to have a Bi solubility of x=7.3×10-3, representing approximately a hundred times increase in solubility over the unstrained bulk case. Despite these potentially large increases in solubility, the equilibrium solubility is still very low compared to values that have been achieved experimentally through nonequilibrium growth. These values of solubility are also sensitive to the choice of the Bi reference state. If the primary route for phase separation is the formation of GaBi within the same structure, rather than Bi metal, GaBi would serve as the source/sink for Bi. If GaBi is used as the Bi reference state, the epitaxial formation energy on a bulk unstrained GaAs substrate is reduced dramatically to 144 meV/Bi, yielding a Bi solubility of x=0.083 in GaAs1-xBix. These calculations suggest that Bi solubility could be greatly enhanced if Bi metal formation is inhibited and the system is forced to remain constrained to the GaAs1-xBix structure. Although GaBi is not a naturally stable compound, it could potentially be stabilized through a combination of kinetic limitations and alloying.

  2. InAs quantum dots in a single-crystal GaAs matrix

    NASA Astrophysics Data System (ADS)

    Brandt, O.; Tapfer, L.; Ploog, K.; Bierwolf, R.; Hohenstein, M.; Phillipp, F.; Lage, H.; Heberle, A.

    1991-10-01

    We directly synthesize InAs microclusters embedded in a single-crystal GaAs matrix by molecular-beam epitaxy. Fractional monolayers of InAs are deposited on terraced (001) GaAs surfaces and subsequently overgrown with GaAs. Growth conditions are adjusted in situ by reflection high-energy electron diffraction to those favoring step-flow nucleation of both Ga and In adatoms. The resulting microscopic structural configuration is studied by double-crystal x-ray diffractometry and high-resolution electron microscopy. These experiments reveal that InAs growth takes place in fact by nucleation of In adatoms on step edges. An array of isolated InAs clusters of subnanometer size (quantum dots) is thereby formed within the GaAs matrix. The interface of the InAs clusters is in registry with the surrounding GaAs matrix and is thus defect-free. Several spectroscopic techniques, such as transmission, cw photoluminescence, photoluminescence excitation, and picosecond photoluminescence, are applied to get insight into the optical properties of this system. We show that the optical response of excitons attached to the InAs dots is determined by the zero-dimensional symmetry of the system. This effect is most evident when comparing the spontaneous emission of InAs dots and InAs planes, which in either case results from the relaxation of excitons to the emitting state followed by their radiative recombination. The reduced translational symmetry causes a progressive release of wave-vector conservation, thus modifying the selection rules that uniquely determine the interaction of excitons with phonons (relaxation) and photons (recombination).

  3. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    NASA Astrophysics Data System (ADS)

    Shutthanandan, V.; Zhu, Z.; Stutzman, M. L.; Hannon, F. E.; Hernandez-Garcia, C.; Nandasiri, M. I.; Kuchibhatla, S. V. N. T.; Thevuthasan, S.; Hess, W. P.

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL). Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS), atomic force microscopy, and secondary ion mass spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF) photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  4. XPS investigation on vacuum thermal desorption of UV/ozone treated GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Cossu, G.; Ingo, G. M.; Mattogno, G.; Padeletti, G.; Proietti, G. M.

    In order to prepare suitable surfaces for molecular beam epitaxy (MBE), sacrificial thin oxide layers on HCl etched GaAs(100) surfaces were grown by both air and UV/ozone exposure. Passive films were subsequently removed by vacuum thermal desorption to achieve surfaces that were smooth and clean on an atomic scale. The evolution of the surface chemical composition, as a function of vacuum desorption temperature, has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS results have evidenced for air and UV/ozone exposed GaAs(100) surfaces a relationship between desorption temperature and surface chemical composition; indeed, the oxide removal is temperature dependent and sequentially selective as follows: As 2O 3. AsO and Ga 2O 3. Furthermore, XPS results have shown that air-grown films have a chemical composition and thermal desorption behaviour different from UV/ozone treated materials. Indeed, these latter have an As 2O 3/Ga 2O 3 and an unoxidized As/Ga ratio close to unity for as grown and thermal treated at 580°C surfaces, respectively. By contrast, air-exposed GaAs(100) materials are Ga 2O 3-enriched and after vacuum thermal desorption treatments have never a stoichiometric composition(As (GaAs)/Ga (GaAs)= 1). Furthermore UV/ozone treated GaAs(100) surfaces subjected to a vacuum thermal treatment at 580°C, have a troublesome organic contamination level below XPS detectability, whereas from air-exposed surfaces, carbon is not completely thermally removable

  5. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    SciTech Connect

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  6. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  7. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    SciTech Connect

    Leon, R.P.; Bailey, S.G.; Mazaris, G.A.; Williams, W.D.

    1986-10-13

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1-bar1-bar1)Ga planes with 6 ..mu..m periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  8. Structural and electronic properties of zinc blend GaAs 1-xBi x solid solutions

    NASA Astrophysics Data System (ADS)

    Abdiche, A.; Abid, H.; Riane, R.; Bouaza, A.

    2010-05-01

    First principles total energy calculations were carried out to investigate structural and electronic properties of zinc-blend (ZB) GaAs, GaBi and GaAs 1-xBi x solid solutions. We have calculated lattice parameters, bulk modulus, pressure derivative and GaAs 1-xBi x band-gap energy for zinc blend-type crystals of the compositions x=0, 0.25, 0.5, 0.75, 1. Discussions will be given in comparison with results obtained with other available theoretical and experimental results.

  9. A search for spin-polarized photoemission from GaAs using light with orbital angular momentum

    SciTech Connect

    Nathan Clayburn, James McCarter, Joan Dreiling, Bernard Poelker, Dominic Ryan, Timothy Gay

    2013-01-01

    Laser light with photon energy near the bandgap of GaAs and with different amounts of orbital angular momentum was used to produce photoemission from unstrained GaAs. The degree of electron spin polarization was measured using a micro-Mott polarimeter and found to be consistent with zero with an upper limit of ~3% for light with up to ±5{bar h} of orbital angular momentum. In contrast, the degree of spin polarization was 32.32 ± 1.35% using circularly-polarized laser light at the same wavelength, which is typical of bulk GaAs.

  10. Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

    SciTech Connect

    Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano; Frigeri, Cesare; Falub, Claudiu V.; Känel, Hans von

    2013-12-23

    Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

  11. The reverse mode of the photo activated charge domain in high field biased semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Qu, Guanghui; Shi, Wei

    2013-02-01

    The nonlinear accumulation of the photogenerated electrons in high field biased SI-GaAs has been defined as photo activated charge domain (PACD). The transient transport dynamics of the PACD is investigated. The result shows that the PACD, working as a reverse gun dipole domain when biased electric field much higher than 4 kV/cm, and the reverse mode of the PACD could dominate the electric field shielding by its main electric field ultrafast and exponential rising against the bias field. Such mechanisms could play an important role in GaAs THz antenna, GaAs photoconductive semiconductor switch, and the other ultrafast GaAs devices.

  12. Hyperhomocysteinemia induced by guanidinoacetic acid is effectively suppressed by choline and betaine in rats.

    PubMed

    Setoue, Minoru; Ohuchi, Seiya; Morita, Tatsuya; Sugiyama, Kimio

    2008-07-01

    Rats were fed 25% casein (25C) diets differing in choline levels (0-0.5%) with and without 0.5% guanidinoacetic acid (GAA) or 0.75% L-methionine for 7 d to determine the effects of dietary choline level on experimental hyperhomocysteinemia. The effects of dietary choline (0.30%) and betaine (0.34%) on GAA- and methionine-induced hyperhomocysteinemia were also compared. Dietary choline suppressed hyperhomocysteinemia induced by GAA, but not by methionine, in a dose-dependent manner. GAA-induced enhancement of the plasma homocysteine concentration was suppressed by choline and betaine to the same degree, but the effects of these compounds were relatively small on methionine-induced hyperhomocysteinemia. Dietary supplementation with choline and betaine significantly increased the hepatic betaine concentration in rats fed a GAA diet, but not in rats fed a methionine diet. These results indicate that choline and betaine are effective at relatively low levels in reducing plasma homocysteine, especially under the condition of betaine deficiency without a loading of homocysteine precursor. PMID:18603787

  13. Concise synthesis of the A/BCD-ring fragment of gambieric acid A

    PubMed Central

    Fuwa, Haruhiko; Fukazawa, Ryo; Sasaki, Makoto

    2014-01-01

    Gambieric acid A (GAA) and its congeners belong to the family of marine polycyclic ether natural products. Their highly complex molecular architecture and unique biological activities have been of intense interest within the synthetic community. We have previously reported the first total synthesis, stereochemical reassignment, and preliminary structure–activity relationships of GAA. Here we disclose a concise synthesis of the A/BCD-ring fragment of GAA. The synthesis started from our previously reported synthetic intermediate that represents the A/B-ring. The C-ring was synthesized via an oxiranyl anion coupling and a 6-endo cyclization, and the D-ring was forged by means of an oxidative lactonization and subsequent palladium-catalyzed functionalization of the lactone ring. In this manner, the number of linear synthetic steps required for the construction of the C- and D-rings was reduced from 22 to 11. PMID:25629027

  14. Bean cultivars (Phaseolus vulgaris L.) have similar high antioxidant capacity, in vitro inhibition of alpha-amylase and alpha-glucosidase while diverse phenolic composition and concentration

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Common beans are a good source of essential nutrients such as protein, fiber, vitamins, and minerals; they also contain phenolic compounds and other phytochemicals. Phenolic compounds exhibit high antioxidant capacity that promotes health benefits by reducing oxidative stress. The objective was to c...

  15. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

    SciTech Connect

    Guo, W. Pena, V.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P.; Date, L.; Bao, X.; Sanchez, E.; Vandervorst, W.

    2014-08-11

    High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

  16. Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method

    NASA Astrophysics Data System (ADS)

    Adamcyk, M.; Beaudoin, M.; Kelson, I.; Levy, Y.; Tiedje, T.

    1998-12-01

    The temperature dependence of the diffusion of lead in GaAs is determined by measuring the modification to the energy spectrum of emitted alpha particles from the decay chain of implanted 212Pb atoms. Diffusion rates are measured for temperatures up to 900 °C. Higher rates are observed for the diffusion in silicon-doped GaAs than in semi-insulating GaAs. An upper limit for the diffusion of radium in GaAs is similarly obtained from the decay of the 224Ra isotope. Implications for the use of implanted alpha sources for thickness monitoring during epitaxial film growth by the alpha-particle energy loss method are discussed.

  17. High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

    SciTech Connect

    Provence, S. R. Ricker, R.; Aytac, Y.; Boggess, T. F.; Prineas, J. P.

    2015-09-28

    InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

  18. Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System

    NASA Astrophysics Data System (ADS)

    Takado, Norikazu; Ide, Yuichi; Asakawa, Kiyoshi

    1990-02-01

    We have developed a new fine-beam assisted GaAs maskless etching system capable of nanofabrication; a focused ion beam (FIB) and electron beam (EB) combined etching system with a reactive gas nozzle. In this FIB/EB combined system, EB excited GaAs etching was successfully performed by irradiating Cl2 gas on a temperature-controlled substrate. 5KeV EB was raster-scanned in a 100pm X 20pm rectangular pattern on a GaAs surface. With special care to remove the native oxide layer, spatially selective etching was also confirmed on a cleaned GaAs surface by controlling the Cl2 pressure.

  19. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; Woo, Jason C. S.

    2016-04-01

    Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

  20. Auger electron spectroscopy analysis of the first stages of thermally stimulated oxidation of GaAs(100)

    NASA Astrophysics Data System (ADS)

    Passeggi, M. C. G.; Vaquila, I.; Ferrón, J.

    1998-05-01

    The first stages (exposures <10 4 L) of thermally stimulated oxidation of GaAs(100) have been studied using Auger electron spectroscopy and principal component analysis. We compare the GaAs oxidation processes taking place at high (700 K) and room temperatures, and during simultaneous electron bombardment and oxygen exposure. We found that while at room temperature, GaAs oxidizes via a one-phase process involving the simultaneous oxidation of Ga and As, the high temperature process is characterized by the presence of two different GaAs oxide phases. The first phase involves the simultaneous oxidation of Ga and As while in the second, only Ga oxides are formed. On the other hand, under simultaneous oxygen exposure and electron irradiation, two different oxide phases appear, both of them exhibiting the same features of the room temperature process, i.e., the simultaneous oxidation of Ga and As.