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Sample records for acid alpha-glucosidase gaa

  1. Cloning the mouse homologue of the human lysosomal acid {alpha}-glucosidase gene

    SciTech Connect

    Ding, J.H.; Yang, B.Z.; Liu, H.M.

    1994-09-01

    Pompe disease (GSD II) is an autosomal recessive disorder caused by a deficiency of lysosomal acid {alpha}-glucosidase (GAA). In an attempt to create a mouse model for Pompe disease, we isolated and characterized the gene encoding the mouse homologue of the human GAA. Twenty clones that extend from exon 2 to the poly(A) tail were isolated from a mouse liver cDNA library, but the remainder of the mRNA proved difficult to obtain by conventional cDNA library screening. Sequences spanning exons 1-2 were cloned by RACE from mouse liver RNA. The full-length liver GAA cDNA contains 3365 nucleotides with a coding region of 2859 nucleotides and a 394 base pair 3{prime}-nontranslated region. The deduced amino acid sequence of the mouse GAA shows 84% identity to the human GAA. Southern blot analysis demonstrated that the mouse GAA was encoded by a single copy gene. Then six bacteriophages containing DNA from the GAA gene were isolated by screening 10{sup 6} phage plaques of a mouse 129 genomic library using a mouse GAA cDNA as a probe. From one of these bacteriophages, an 11-kilobase EcoRI fragment containing exons 3 to 15 was subcloned and sequenced. Work is in progress using this genomic clone to disrupt the GAA gene in murine embryonic stem cells in order to create GSD II mice.

  2. Oral delivery of Acid Alpha Glucosidase epitopes expressed in plant chloroplasts suppresses antibody formation in treatment of Pompe mice.

    PubMed

    Su, Jin; Sherman, Alexandra; Doerfler, Phillip A; Byrne, Barry J; Herzog, Roland W; Daniell, Henry

    2015-10-01

    Deficiency of acid alpha glucosidase (GAA) causes Pompe disease in which the patients systemically accumulate lysosomal glycogen in muscles and nervous systems, often resulting in infant mortality. Although enzyme replacement therapy (ERT) is effective in treating patients with Pompe disease, formation of antibodies against rhGAA complicates treatment. In this report, we investigated induction of tolerance by oral administration of GAA expressed in chloroplasts. Because full-length GAA could not be expressed, N-terminal 410-amino acids of GAA (as determined by T-cell epitope mapping) were fused with the transmucosal carrier CTB. Tobacco transplastomic lines expressing CTB-GAA were generated through site-specific integration of transgenes into the chloroplast genome. Homoplasmic lines were confirmed by Southern blot analysis. Despite low-level expression of CTB-GAA in chloroplasts, yellow or albino phenotype of transplastomic lines was observed due to binding of GAA to a chloroplast protein that has homology to mannose-6 phosphate receptor. Oral administration of the plant-made CTB-GAA fusion protein even at 330-fold lower dose (1.5 μg) significantly suppressed immunoglobulin formation against GAA in Pompe mice injected with 500 μg rhGAA per dose, with several-fold lower titre of GAA-specific IgG1 and IgG2a. Lyophilization increased CTB-GAA concentration by 30-fold (up to 190 μg per g of freeze-dried leaf material), facilitating long-term storage at room temperature and higher dosage in future investigations. This study provides the first evidence that oral delivery of plant cells is effective in reducing antibody responses in ERT for lysosomal storage disorders facilitating further advances in clinical investigations using plant cell culture system or in vitro propagation.

  3. Phosphatidylserine Converts Immunogenic Recombinant Human Acid Alpha-Glucosidase to a Tolerogenic Form in a Mouse Model of Pompe Disease.

    PubMed

    Schneider, Jennifer L; Balu-Iyer, Sathy V

    2016-10-01

    Development of unwanted immune responses against therapeutic proteins is a major clinical complication. Recently, we have shown that exposure of Factor VIII in the presence of phosphatidylserine (PS) induces antigen-specific hyporesponsiveness to Factor VIII rechallenge, suggesting that PS is not immune suppressive, but rather immune regulatory in that PS converts an immunogen to a tolerogen. Since PS is exposed in the outer leaflet during apoptosis, we hypothesize that PS imparts tolerogenic activity to this natural process. Thus, immunization with PS containing liposomes would mimic this natural process. Here, we investigate the immune regulatory effects of PS in inducing tolerance toward recombinant human acid alpha-glucosidase (rhGAA). rhGAA was found to complex with PS liposomes through hydrophobic interactions, and incubation PS-rhGAA with dendritic cells resulted in the increased secretion of transforming growth factor-β. Immunization with PS-rhGAA or O-phospho-L-serine-rhGAA led to a reduction in anti-rhGAA antibody response which persisted despite rechallenge with free rhGAA. Importantly, the titer levels in a majority of these animals remained unchanged after rechallenge and can be considered nonresponders. These data provide evidence that PS liposomes can be used to induce tolerance toward therapeutic proteins, in general. PMID:27488899

  4. [Two new mutations in the gene that codes for acid alpha-glucosidase in an adolescent with late-onset Pompe disease].

    PubMed

    Guevara-Campos, José; Romeo-Villarroel, María A; González-De Guevara, Lucía; Escobar, Víctor

    2013-09-16

    INTRODUCTION. Glycogen storage disease type II, or Pompe disease, is a lysosomal disease with an autosomal recessive pattern of inheritance. Late-onset Pompe disease is a progressive metabolic myopathy caused by decreased activity of the enzyme acid alpha-glucosidase (GAA), which gives rise to reduced degradation and later accumulation of glycogen in the lysosomes and cell cytoplasm. CASE REPORT. A 16-year-old Venezuelan male, diagnosed with late-onset glycogen storage disease type II, or Pompe disease, based on the patient's clinical picture and the biochemical findings. The patient presented unmistakable signs of muscular atrophy in the upper and lower limbs, as well as positive Gowers' sign. Levels of creatinkinase in serum were high. His functional respiratory capacity was diminished. The quantification of the enzymatic activity of acid alpha-glucosidase on filter paper did not show any significant decrease in activity. A molecular genetic analysis revealed the existence of two homozygotic mutations in the gene GAA, c.547-67C>G and c.547-39T>G, both on exon 2 of chromosome 17. According to the human genome database and the review that was undertaken, the changes detected in this patient represent new mutations in the acid alpha-glucosidase gene, GAA. This claim is in agreement with the clinical features and biochemical changes found in the patient. CONCLUSION. A molecular genetic study is mandatory in patients suspected of having this disease.

  5. Affinity chromatography of yeast alpha-glucosidase using ligand-mediated chromatography on immobilized phenylboronic acids.

    PubMed Central

    Myöhänen, T A; Bouriotis, V; Dean, P D

    1981-01-01

    The synthesis of 3-nitro-4-(6-aminohexylamido)phenylboronic acid is described. The properties of two novel forms of immobilized phenylboronate agarose adsorbents [m-aminophenylboronic acid-Matrex Gel and 3-nitro-4-(6-aminohexylamido)phenylboronic acid-Sepharose CL-6B] were investigated. Both gels bind and selectively retard the glycoprotein alpha-glucosidase from yeast. The retardation is affected by following parameters: (i) pH, (ii) presence of sugar, (iii) concentration of sugar and (iv) buffer species (especially triethanolamine). Five sugars were studied, namely sorbitol, fructose, ribose, glucose and maltose. The concentration of sugar required to produce significant retardation increased in the above order, whereas the ability of sugar to form a complex with boron decreases in the same order. These effects were observed with crude as well as pure enzyme. Since alpha-glucosidase is a glycoprotein, it is proposed that this protein is mainly bound to these immobilized phenylboronates via sugar (glyco) residues. Displacement of the enzyme from the column is effected by the sugar in the buffer (or in a preincubation mixture). However, the marked pH-dependence (this retardation effect could only be observed at pH 7.4) suggests that these results are not due solely to hydrophobic or ionic mechanisms and are more complex than simple sugar-phenylboronic acid interactions. PMID:7034722

  6. Evaluation of Readministration of a Recombinant Adeno-Associated Virus Vector Expressing Acid Alpha-Glucosidase in Pompe Disease: Preclinical to Clinical Planning

    PubMed Central

    Corti, Manuela; Cleaver, Brian; Clément, Nathalie; Conlon, Thomas J.; Faris, Kaitlyn J.; Wang, Gensheng; Benson, Janet; Tarantal, Alice F.; Fuller, Davis; Herzog, Roland W.; Byrne, Barry J.

    2015-01-01

    A recombinant serotype 9 adeno-associated virus (rAAV9) vector carrying a transgene that expresses codon-optimized human acid alpha-glucosidase (hGAA, or GAA) driven by a human desmin (DES) promoter (i.e., rAAV9-DES-hGAA) has been generated as a clinical candidate vector for Pompe disease. The rAAV9-DES-hGAA vector is being developed as a treatment for both early- and late-onset Pompe disease, in which patients lack sufficient lysosomal alpha-glucosidase leading to glycogen accumulation. In young patients, the therapy may need to be readministered after a period of time to maintain therapeutic levels of GAA. Administration of AAV-based gene therapies is commonly associated with the production of neutralizing antibodies that may reduce the effectiveness of the vector, especially if readministration is required. Previous studies have demonstrated the ability of rAAV9-DES-hGAA to correct cardiac and skeletal muscle pathology in Gaa−/− mice, an animal model of Pompe disease. This article describes the IND-enabling preclinical studies supporting the program for a phase I/II clinical trial in adult patients with Pompe. These studies were designed to evaluate the toxicology, biodistribution, and potential for readministration of rAAV9-DES-hGAA injected intramuscularly into the tibialis anterior muscle using an immune modulation strategy developed for this study. In the proposed clinical study, six adult participants with late-onset Pompe disease will be enrolled. The goal of the immune modulation strategy is to ablate B-cells before the initial exposure of the study agent in one leg and the subsequent exposure of the same vector to the contralateral leg four months after initial dosing. The dosing of the active agent is accompanied by a control injection of excipient dosing in the contralateral leg to allow for blinding and randomization of dosing, which may also strengthen the evidence generated from gene therapy studies in the future. Patients will act as their own

  7. B-cell Depletion and Immunomodulation Prior to Initiation of Enzyme Replacement Therapy Blocks the Immune Response to Acid Alpha Glucosidase in Infantile Onset Pompe Disease

    PubMed Central

    Elder, Melissa E.; Nayak, Sushrusha; Collins, Shelley W.; Lawson, Lee Ann; Kelley, Jeffry S.; Herzog, Roland W.; Modica, Renee F.; Lew, Judy; Lawrence, Robert M.; Byrne, Barry J.

    2014-01-01

    Objectives Pompe disease is a progressive neuromuscular disorder due to acid alpha glucosidase (GAA) deficiency. Cross-reacting immunologic material (CRIM)-negative infants with null GAA mutations have the most severe phenotype and develop anti-GAA antibodies following exposure to enzyme replacement therapy (ERT). Antibodies influence bio-distribution, attenuate the beneficial effects of ERT, and are believed to influence infusion-associated reactions (IARs), which occur in nearly all early-onset patients. We evaluated the potential that B-cell depletion prior to ERT initiation would block GAA antibody responses and improve clinical outcome. Study Design Six Pompe subjects (four CRIM-negative) between 2–8 months of age received rituximab and sirolimus or myophenolate prior to ERT. Four subjects continued to receive sirolimus, every 12-week rituximab and monthly intravenous immunoglobulin for the duration of ERT. Sirolimus trough levels, IgG levels, CD3, CD4, CD8, CD19, CD20, NTproBNP, CK, CK-MB, CRP, platelet, alkaline phosphatase, AST, ALT were measured regularly. Results Immunomodulation achieved B-cell depletion without adverse effects. After 17–36 months of rituximab, sirolimus and ERT, all subjects lacked antibodies against GAA, four continued to gain motor milestones, yet two progressed to require invasive ventilation. Absence of infusion associated reactions allowed accelerated infusion rates. No IARs were observed at standard or accelerated infusion rates. Conclusions B-cell depletion and T-cell immunomodulation in infants naïve to ERT was accomplished safely, eliminated immune responses against GAA, thereby optimizing clinical outcome, however this approach did not necessarily influence sustained independent ventilation. Importantly, study outcomes support the concept of initiating immunomodulation prior to beginning ERT since the study regimen allowed for prompt initiation of treatment. PMID:23601496

  8. Hes-1, a known transcriptional repressor, acts as a transcriptional activator for the human acid alpha-glucosidase gene in human fibroblast cells.

    PubMed

    Yan, Bo; Raben, Nina; Plotz, Paul H

    2002-03-01

    Hes-1, the mammalian homologue 1 of Drosophila hairy and Enhancer of split proteins, belongs to a family of basic helix-loop-helix proteins that are essential to neurogenesis, myogenesis, hematopoiesis, and sex determination. Hes-1 is a transcriptional repressor for a number of known genes including the human acid alpha-glucosidase (GAA) gene as we have previously shown in Hep G2 cells. The human GAA gene encodes the enzyme for glycogen breakdown in lysosomes, deficiency of which results in Glycogen Storage Disease type II (Pompe syndrome). Using constructs containing the DNA element that demonstrates repressive activity in Hep G2 cells and conditions in which the same transcription factors, Hes-1 and YY1, bind, we have shown that this element functions as an enhancer in human fibroblasts. Site-directed mutagenesis and overexpression of Hes-1 showed that Hes-1 functions as a transcriptional activator. The dual function of Hes-1 we have found is likely to contribute to the subtle tissue-specific control of this housekeeping gene.

  9. Transcriptional regulation of the human acid alpha-glucosidase gene. Identification of a repressor element and its transcription factors Hes-1 and YY1.

    PubMed

    Yan, B; Heus, J; Lu, N; Nichols, R C; Raben, N; Plotz, P H

    2001-01-19

    Acid alpha-glucosidase, the product of a housekeeping gene, is a lysosomal enzyme that degrades glycogen. A deficiency of this enzyme is responsible for a recessively inherited myopathy and cardiomyopathy, glycogenesis type II. We have previously demonstrated that the human acid alpha-glucosidase gene expression is regulated by a silencer within intron 1, which is located in the 5'-untranslated region. In this study, we have used deletion analysis, electrophoretic mobility shift assay, and footprint analysis to further localize the silencer to a 25-base pair element. The repressive effect on the TK promoter was about 50% in both orientations in expression plasmid, and two transcriptional factors were identified with antibodies binding specifically to the element. Mutagenesis and functional analyses of the element demonstrated that the mammalian homologue 1 of Drosophila hairy and Enhancer of split (Hes-1) binding to an E box (CACGCG) and global transcription factor-YY1 binding to its core site function as a transcriptional repressor. Furthermore, the overexpression of Hes-1 significantly enhanced the repressive effect of the silencer element. The data should be helpful in understanding the expression and regulation of the human acid alpha-glucosidase gene as well as other lysosomal enzyme genes.

  10. Sequence of the cDNA and 5'-flanking region for human acid alpha-glucosidase, detection of an intron in the 5' untranslated leader sequence, definition of 18-bp polymorphisms, and differences with previous cDNA and amino acid sequences.

    PubMed

    Martiniuk, F; Mehler, M; Tzall, S; Meredith, G; Hirschhorn, R

    1990-03-01

    Acid maltase or acid alpha-glucosidase (GAA) is a lysosomal enzyme that hydrolyzes glycogen to glucose and is deficient in glycogen storage disease type II. Previously, we isolated a partial cDNA (1.9 kb) for human GAA; we have now used this cDNA to isolate and determine sequence in longer cDNAs from four additional independent cDNA libraries. Primer extension studies indicated that the mRNA extended approximately 200 bp 5' of the cDNA sequence obtained. Therefore, we isolated a genomic fragment containing 5' cDNA sequences that overlapped the previous cDNA sequence and extended an additional 24 bp to an initiation codon within a Kozak consensus sequence. The sequence of the genomic clone revealed an intron-exon junction 32 bp 5' to the ATG, indicating that the 5' leader sequence was interrupted by an intron. The remaining 186 bp of 5' untranslated sequence was identified approximately 3 kb upstream. The promoter region upstream from the start site of transcription was GC rich and contained areas of homology to Sp1 binding sites but no identifiable CAAT or TATA box. The combined data gave a nucleotide sequence of 2,856 bp for the coding region from the ATG to a stop codon, predicting a protein of 952 amino acids. The 3' untranslated region contained 555 bp with a polyadenylation signal at 3,385 bp followed by 16 bp prior to a poly(A) tail. This sequence of the GAA coding region differs from that reported by Hoefsloot et al. (1988) in three areas that change a total of 42 amino acids. Direct determination of the amino acid sequence in one of these areas confirmed the nucleotide sequence reported here but also disagreed with the directly determined amino acid sequence reported by Hoefsloot et al. (1988). At two other areas, changes in base pairs predicted new restriction sites that were identified in cDNAs from several independent libraries. The amino acid changes in all three ares increased the homology to rabbit-human isomaltase. Therefore, we believe that our

  11. Alterations in specific activity of lysosomal alpha-glucosidase in cystic fibrosis.

    PubMed

    Vladutiu, G D; Kewin, C C

    1988-12-30

    Cultured skin fibroblasts derived from patients with cystic fibrosis contain 2.1-fold more acid alpha-glucosidase (EC 3.2.1.3) than normal fibroblasts. This difference is amplified to 2.3-fold when the cells are extracted in Triton X-100. In a study of 14 fibroblast cell lines derived from CF homozygotes and heterozygotes, normal individuals and patients with other recessively inherited disorders, normal individuals could be distinguished from either CF homozygotes or heterozygotes based on the ratio of acid alpha-glucosidase to beta-hexosaminidase when fibroblasts were extracted in either water or Triton X-100. However, the best distinction could be made with water extracts as there was no overlap among individual data points in the three categories. The acid to neural alpha-glucosidase ratio only distinguished CF homozygotes from normal individuals when cells were extracted in Triton X-100. The use of a ratio relationship of acid alpha-glucosidase with beta-hexosaminidase allows the comparison of data from multiple experiments on different days of assay and on cells at different passage numbers. These results suggest that alpha glucosidase may have a role in the primary defect in cystic fibrosis.

  12. Enzyme therapy for pompe disease with recombinant human alpha-glucosidase from rabbit milk.

    PubMed

    Van den Hout, J M; Reuser, A J; de Klerk, J B; Arts, W F; Smeitink, J A; Van der Ploeg, A T

    2001-04-01

    Pompe disease is a metabolic myopathy caused by deficiency of lysosomal acid alpha-glucosidase. In this report we review the first 36 weeks of a clinical study on the safety and efficacy of enzyme therapy aimed at correcting the deficiency. Four patients with infantile Pompe disease were enrolled. They received recombinant human alpha-glucosidase from transgenic rabbit milk. The product is generally well tolerated and reaches the primary target tissues. Normalization of alpha-glucosidase activity in skeletal muscle was obtained and degradation of PAS-positive material was seen in tissue sections. The clinical condition of all patients improved. The effect on heart was most significant, with an impressive reduction of the left ventricular mass index (LVMI). Motor function improved. The positive preliminary results stimulate continuation and extension of efforts towards the realization of enzyme therapy for Pompe disease.

  13. Antidiabetic Property of Symplocos cochinchinensis Is Mediated by Inhibition of Alpha Glucosidase and Enhanced Insulin Sensitivity

    PubMed Central

    Antu, Kalathookunnel Antony; Riya, Mariam Philip; Mishra, Arvind; Anilkumar, Karunakaran S.; Chandrakanth, Chandrasekharan K.; Tamrakar, Akhilesh K.; Srivastava, Arvind K.; Raghu, K. Gopalan

    2014-01-01

    The study is designed to find out the biochemical basis of antidiabetic property of Symplocos cochinchinensis (SC), the main ingredient of ‘Nisakathakadi’ an Ayurvedic decoction for diabetes. Since diabetes is a multifactorial disease, ethanolic extract of the bark (SCE) and its fractions (hexane, dichloromethane, ethyl acetate and 90% ethanol) were evaluated by in vitro methods against multiple targets relevant to diabetes such as the alpha glucosidase inhibition, glucose uptake, adipogenic potential, oxidative stress, pancreatic beta cell proliferation, inhibition of protein glycation, protein tyrosine phosphatase-1B (PTP-1B) and dipeptidyl peptidase-IV (DPP-IV). Among the extracts, SCE exhibited comparatively better activity like alpha glucosidase inhibition (IC50 value-82.07±2.10 µg/mL), insulin dependent glucose uptake (3 fold increase) in L6 myotubes, pancreatic beta cell regeneration in RIN-m5F (3.5 fold increase) and reduced triglyceride accumulation (22% decrease) in 3T3L1 cells, protection from hyperglycemia induced generation of reactive oxygen species in HepG2 cells (59.57% decrease) with moderate antiglycation and PTP-1B inhibition. Chemical characterization by HPLC revealed the superiority of SCE over other extracts due to presence and quantity of bioactives (beta-sitosterol, phloretin 2′glucoside, oleanolic acid) in addition to minerals like magnesium, calcium, potassium, sodium, zinc and manganese. So SCE has been subjected to oral sucrose tolerance test to evaluate its antihyperglycemic property in mild diabetic and diabetic animal models. SCE showed significant antihyperglycemic activity in in vivo diabetic models. We conclude that SC mediates the antidiabetic activity mainly via alpha glucosidase inhibition, improved insulin sensitivity, with moderate antiglycation and antioxidant activity. PMID:25184241

  14. Phase I/II trial of adeno-associated virus-mediated alpha-glucosidase gene therapy to the diaphragm for chronic respiratory failure in Pompe disease: initial safety and ventilatory outcomes.

    PubMed

    Smith, Barbara K; Collins, Shelley W; Conlon, Thomas J; Mah, Cathryn S; Lawson, Lee Ann; Martin, Anatole D; Fuller, David D; Cleaver, Brian D; Clément, Nathalie; Phillips, Dawn; Islam, Saleem; Dobjia, Nicole; Byrne, Barry J

    2013-06-01

    Pompe disease is an inherited neuromuscular disease caused by deficiency of lysosomal acid alpha-glucosidase (GAA) leading to glycogen accumulation in muscle and motoneurons. Cardiopulmonary failure in infancy leads to early mortality, and GAA enzyme replacement therapy (ERT) results in improved survival, reduction of cardiac hypertrophy, and developmental gains. However, many children have progressive ventilatory insufficiency and need additional support. Preclinical work shows that gene transfer restores phrenic neural activity and corrects ventilatory deficits. Here we present 180-day safety and ventilatory outcomes for five ventilator-dependent children in a phase I/II clinical trial of AAV-mediated GAA gene therapy (rAAV1-hGAA) following intradiaphragmatic delivery. We assessed whether rAAV1-hGAA results in acceptable safety outcomes and detectable functional changes, using general safety measures, immunological studies, and pulmonary functional testing. All subjects required chronic, full-time mechanical ventilation because of respiratory failure that was unresponsive to both ERT and preoperative muscle-conditioning exercises. After receiving a dose of either 1×10(12) vg (n=3) or 5×10(12) vg (n=2) of rAAV1-hGAA, the subjects' unassisted tidal volume was significantly larger (median [interquartile range] 28.8% increase [15.2-35.2], p<0.05). Further, most patients tolerated appreciably longer periods of unassisted breathing (425% increase [103-851], p=0.08). Gene transfer did not improve maximal inspiratory pressure. Expected levels of circulating antibodies and no T-cell-mediated immune responses to the vector (capsids) were observed. One subject demonstrated a slight increase in anti-GAA antibody that was not considered clinically significant. These results indicate that rAAV1-hGAA was safe and may lead to modest improvements in volitional ventilatory performance measures. Evaluation of the next five patients will determine whether earlier intervention can

  15. cDNA cloning and characterisation of an alpha-glucosidase gene from potato (Solanum tuberosum L.).

    PubMed

    Taylor, M A; George, L A; Ross, H A; Davies, H V

    1998-02-01

    Using an Arabidopsis thaliana expressed sequence tag with sequence similarity to human lysosomal alpha-glucosidase as a probe, a potato cDNA was isolated. The cDNA encodes a polypeptide with an Mr value of 105,400 and the most significant matches of the deduced amino acid sequence are with members of family 31 of glucosyl transferase. The potato cDNA was expressed in a strain of Saccharomyces cerevisiae that is deficient in maltase activity and unable to grow using maltose as a carbon source (ABYSMAL81). Expression of the potato cDNA in the mutant yeast strain restores its ability to use maltose as a carbon source for growth. Additionally, alpha-glucosidase activity could be measured in extracts of the yeast cells following complementation. A range of maltodextrins were substrates for this activity. The steady-state expression level of the potato alpha-glucosidase gene was low in most tissues examined, the highest levels occurring in sprouting tubers and source leaves.

  16. Inhibition of alpha-glucosidase by aqueous extracts of some potent antidiabetic medicinal herbs.

    PubMed

    Onal, Seçil; Timur, Suna; Okutucu, Burcu; Zihnioğlu, Figen

    2005-01-01

    Diabetes mellitus is one of the most prevalant diseases of adults. Agents with alpha-glucosidase inhibitory activity have been useful as oral hypoglycemic drugs for the control of hyperglycemia in patients with type 2; noninsulin-dependent, diabetes mellitus (NIDDM). Investigation of some medicinal herbs: Urtica dioica, Taraxacum officinale, Viscum album, and Myrtus communis with alpha-glucosidase inhibitor activity was conducted to identify a prophylactic effect for diabetes in vitro. All plants showed differing potent alpha-glucosidase inhibitory activity. However, Myrtus communis strongly inhibited the enzyme (IC50 = 38 microg/mL). The inhibitory effect of these plants and some common antidiabetic drugs against the enzyme source (baker's yeast, rabbit liver, and small intestine) were also searched. Approximately all inhibitors used in this study showed quite different inhibitory activities, according to alpha-glucosidase origins. Furthermore, subsequent separation of the active material from Myrtus communis by HPLC showed that only one fraction acted as an a-glucosidase inhibitor.

  17. The role of alpha-glucosidase in germinating barley grains.

    PubMed

    Stanley, Duncan; Rejzek, Martin; Naested, Henrik; Smedley, Mark; Otero, Sofía; Fahy, Brendan; Thorpe, Frazer; Nash, Robert J; Harwood, Wendy; Svensson, Birte; Denyer, Kay; Field, Robert A; Smith, Alison M

    2011-02-01

    The importance of α-glucosidase in the endosperm starch metabolism of barley (Hordeum vulgare) seedlings is poorly understood. The enzyme converts maltose to glucose (Glc), but in vitro studies indicate that it can also attack starch granules. To discover its role in vivo, we took complementary chemical-genetic and reverse-genetic approaches. We identified iminosugar inhibitors of a recombinant form of an α-glucosidase previously discovered in barley endosperm (ALPHA-GLUCOSIDASE97 [HvAGL97]), and applied four of them to germinating grains. All four decreased the Glc-to-maltose ratio in the endosperm 10 d after imbibition, implying inhibition of maltase activity. Three of the four inhibitors also reduced starch degradation and seedling growth, but the fourth did not affect these parameters. Inhibition of starch degradation was apparently not due to inhibition of amylases. Inhibition of seedling growth was primarily a direct effect of the inhibitors on roots and coleoptiles rather than an indirect effect of the inhibition of endosperm metabolism. It may reflect inhibition of glycoprotein-processing glucosidases in these organs. In transgenic seedlings carrying an RNA interference silencing cassette for HvAgl97, α-glucosidase activity was reduced by up to 50%. There was a large decrease in the Glc-to-maltose ratio in these lines but no effect on starch degradation or seedling growth. Our results suggest that the α-glucosidase HvAGL97 is the major endosperm enzyme catalyzing the conversion of maltose to Glc but is not required for starch degradation. However, the effects of three glucosidase inhibitors on starch degradation in the endosperm indicate the existence of unidentified glucosidase(s) required for this process.

  18. Cuminaldehyde: Aldose Reductase and alpha-Glucosidase Inhibitor Derived from Cuminum cyminum L. Seeds.

    PubMed

    Lee, Hoi-Seon

    2005-04-01

    The inhibitory activity of Cuminum cyminum seed-isolated component was evaluated against lens aldose reductase and alpha-glucosidase isolated from Sprague-Dawley male rats and compared to that of 11 commercially available components derived from C. cyminum seed oil, as well as quercitrin as an aldose reductase inhibitor and acarbose as an alpha-glucosidase inhibitor. The biologically active constituent of C. cyminum seed oil was characterized as cuminaldehyde by various spectral analyses. The IC(50) value of cuminaldehyde is 0.00085 mg/mL against aldose reductase and 0.5 mg/mL against alpha-glucosidase, respectively. Cuminaldehyde was about 1.8 and 1.6 times less in inhibitory activity than acarbose and quercitin, respectively. Nonetheless, cuminaldehyde may be useful as a lead compound and a new agent for antidiabetic therapeutics.

  19. Unexpected high digestion rate of cooked starch by the Ct-Maltase-Glucoamylase small intestine mucosal alpha-glucosidase subunit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    For starch digestion to glucose, two luminal alpha-amylases and four gut mucosal alpha-glucosidase subunits are employed. The aim of this research was to investigate, for the first time, direct digestion capability of individual mucosal alpha-glucosidases on cooked (gelatinized) starch. Gelatinized ...

  20. Different polyphenolic components of soft fruits inhibit alpha-amylase and alpha-glucosidase.

    PubMed

    McDougall, Gordon J; Shpiro, Faina; Dobson, Patricia; Smith, Pauline; Blake, Alison; Stewart, Derek

    2005-04-01

    Polyphenol-rich extracts from soft fruits were tested for their ability to inhibit alpha-amylase and alpha-glucosidase. All extracts tested caused some inhibition of alpha-amylase, but there was a 10-fold difference between the least and most effective extracts. Strawberry and raspberry extracts were more effective alpha-amylase inhibitors than blueberry, blackcurrant, or red cabbage. Conversely, alpha-glucosidase was more readily inhibited by blueberry and blackcurrant extracts. The extent of inhibition of alpha-glucosidase was related to their anthocyanin content. For example, blueberry and blackcurrant extracts, which have the highest anthocyanin content, were the most effective inhibitors of alpha-glucosidase. The extracts most effective in inhibiting alpha-amylase (strawberry and raspberry) contain appreciable amounts of soluble tannins. Other tannin-rich extracts (red grape, red wine, and green tea) were also effective inhibitors of alpha-amylase. Indeed, removing tannins from strawberry extracts with gelatin also removed inhibition. Fractionation of raspberry extracts on Sephadex LH-20 produced an unbound fraction enriched in anthocyanins and a bound fraction enriched in tannin-like polyphenols. The unbound anthocyanin-enriched fraction was more effective against alpha-glucosidase than the original extract, whereas the alpha-amylase inhibitors were concentrated in the bound fraction. The LH-20 bound sample was separated by preparative HPLC, and fractions were assayed for inhibition of alpha-amylase. The inhibitory components were identified as ellagitannins using LC-MS-MS. This study suggests that different polyphenolic components of fruits may influence different steps in starch digestion in a synergistic manner. PMID:15796622

  1. A second independent resistance mechanism to Bacillus sphaericus binary toxin targets its alpha-glucosidase receptor in Culex quinquefasciatus.

    PubMed

    Romão, Tatiany Patrícia; de Melo Chalegre, Karlos Diogo; Key, Shana; Ayres, Constância Flávia Junqueira; Fontes de Oliveira, Cláudia Maria; de-Melo-Neto, Osvaldo Pompílio; Silva-Filha, Maria Helena Neves Lobo

    2006-04-01

    The entomopathogen Bacillus sphaericus is an important tool for the vector control of Culex sp., and its effectiveness has been validated in field trials. The appearance of resistance to this bacterium, however, remains a threat to its use, and attempts have been made to understand the resistance mechanisms. Previous work showed that the resistance to B. sphaericus in a Culex quinquefasciatus colony is associated with the absence of the approximately 60-kDa binary toxin receptor in larvae midgut microvilli. Here, the gene encoding the C. quinquefasciatus toxin receptor, Cqm1, was cloned and sequenced from a susceptible colony. The deduced amino-acid sequence confirmed its identity as an alpha-glucosidase, and analysis of the corresponding gene sequence from resistant larvae implicated a 19-nucleotide deletion as the basis for resistance. This deletion changes the ORF and originates a premature stop codon, which prevents the synthesis of the full-length Cqm1. Expression of the truncated protein, however, was not detected when whole larvae extracts were probed with antibodies raised against an N-terminal 45-kDa recombinant fragment of Cqm1. It seems that the premature stop codon directs the mutated cqm1 to the nonsense-mediated decay pathway of mRNA degradation. In-gel assays confirmed that a single alpha-glucosidase protein is missing from the resistant colony. Further in vitro affinity assays showed that the recombinant fragment binds to the toxin, and mapped the binding site to the N-terminus of the receptor. PMID:16689941

  2. Alpha-glucosidase inhibitory activity of bromophenol purified from the red alga Polyopes lancifolia.

    PubMed

    Kim, Keun Young; Nguyen, The Han; Kurihara, Hideyuki; Kim, Sang Moo

    2010-06-01

    A bromophenol, bis(2,3-dibromo-4,5-dihydroxybenzyl) ether, was purified from the red alga Polyopes lancifolia. Its IC(50) values were 0.098 and 0.120 microM against Saccharomyces cerevisiae and Bacillus stearothermophilus alpha-glucosidases, respectively, and 1.00 and 1.20 mM against rat-intestinal sucrase and maltase. This bromophenol competitively inhibited S. cerevisiae alpha-glucosidase with a K(I) value of 0.068 microM and was very stable at pH 2 for 60 min at 37 degrees C. Therefore, this P. lancifolia bromophenol may have potential as natural nutraceutical for the management of type 2 diabetes.

  3. Purification and partial characterization of three forms of alpha-glucosidase from the fruit fly Drosophila melanogaster.

    PubMed

    Tanimura, T; Kitamura, K; Fukuda, T; Kikuchi, T

    1979-01-01

    Three forms of alpha-glucosidase, I, II, and III, have been purified from the whole body extract of adult flies of Drosophila melanogaster in yields of 2.1, 5.3, and 6.7%, respectively. The purification procedures involved ammonium sulfate fractionation, Con A-Sepharose 4B affinity chromatography, DEAE-Sepharose CL-6B ion exchange chromatography, Sephacryl S-200 gel filtration, and preparative gel electrophoresis. Each purified enzyme showed a single band on polyacrylamide gel on both protein and enzyme activity staining. The molecular weights of alpha-glucosidases I, II, and III were estimated to be 200,000, 56,000, and 76,000, respectively, by gel filtration. SDS gels indicated that alpha-glucosidases II and III were each composed of a single polypeptide chain, whereas alpha-glucosidase I was composed of two identical subunits. Both alpha-glucosidases II and III hydrolyzed sucrose and p-nitrophenyl-alpha-D-glucoside (PNPG), but alpha-glucosidase I hydrolyzed PNPG to a much lesser extent than sucrose. For sucrose the pH optima of alpha-glucosidases I, II, and III were pH 6.0, 5.0, and 6.0 and the Km values were 13.1, 8.9, and 10 mM, respectively. For PNPG the pH optima of alpha-glucosidases II and III were pH 5.5 and 6.5 and the Km values were 0.77 and 0.21 mM, respectively.

  4. Purunusides A-C, alpha-glucosidase inhibitory homoisoflavone glucosides from Prunus domestica.

    PubMed

    Kosar, Shaheen; Fatima, Itrat; Mahmood, Azhar; Ahmed, Rehana; Malik, Abdul; Talib, Sumaira; Chouhdary, Muhammad Iqbal

    2009-12-01

    Purunusides A-C (1-3), new homoisoflavone glucosides together with the known compounds beta-sitosterol (4) and 6,7-methylenedioxy-8-methoxycoumarin (5) have been isolated from n-butanol and ethyl acetate soluble fractions of Prunus domestica. Their structures were assigned on the basis of spectral studies. The compounds 1-3 showed potent inhibitory activity against the enzyme alpha-glucosidase.

  5. Screening alpha-glucosidase and alpha-amylase inhibitors from natural compounds by molecular docking in silico.

    PubMed

    Jhong, Chien-Hung; Riyaphan, Jirawat; Lin, Shih-Hung; Chia, Yi-Chen; Weng, Ching-Feng

    2015-01-01

    The alpha-glucosidase inhibitor is a common oral anti-diabetic drug used for controlling carbohydrates normally converted into simple sugars and absorbed by the intestines. However, some adverse clinical effects have been observed. The present study seeks an alternative drug that can regulate the hyperglycemia by down-regulating alpha-glucosidase and alpha-amylase activity by molecular docking approach to screen the hyperglycemia antagonist against alpha-glucosidase and alpha-amylase activities from the 47 natural compounds. The docking data showed that Curcumin, 16-hydroxy-cleroda-3,13-dine-16,15-olide (16-H), Docosanol, Tetracosanol, Antroquinonol, Berberine, Catechin, Quercetin, Actinodaphnine, and Rutin from 47 natural compounds had binding ability towards alpha-amylase and alpha-glucosidase as well. Curcumin had a better biding ability of alpha-amylase than the other natural compounds. Analyzed alpha-glucosidase activity reveals natural compound inhibitors (below 0.5 mM) are Curcumin, Actinodaphnine, 16-H, Quercetin, Berberine, and Catechin when compared to the commercial drug Acarbose (3 mM). A natural compound with alpha-amylase inhibitors (below 0.5 mM) includes Curcumin, Berberine, Docosanol, 16-H, Actinodaphnine/Tetracosanol, Catechin, and Quercetin when compared to Acarbose (1 mM). When taken together, the implication is that molecular docking is a fast and effective way to screen alpha-glucosidase and alpha-amylase inhibitors as lead compounds of natural sources isolated from medicinal plants.

  6. Novel {alpha}-glucosidase from human gut microbiome : substrate specificities and their switch.

    SciTech Connect

    Tan, K.; Tesar, C.; Wilton, R.; Keigher, L.; Babnigg, G.; Joachimiak, A.; Biosciences Division

    2010-01-01

    The human intestine harbors a large number of microbes forming a complex microbial community that greatly affects the physiology and pathology of the host. In the human gut microbiome, the enrichment in certain protein gene families appears to be widespread. They include enzymes involved in carbohydrate metabolism such as glucoside hydrolases of dietary polysaccharides and glycoconjugates. We report the crystal structures (wild type, 2 mutants, and a mutant/substrate complex) and the enzymatic activity of a recombinant {alpha}-glucosidase from human gut bacterium Ruminococcus obeum. The first ever protein structures from this bacterium reveal a structural homologue to human intestinal maltase-glucoamylase with a highly conserved catalytic domain and reduced auxiliary domains. The {alpha}-glucosidase, a member of GH31 family, shows substrate preference for {alpha}(1-6) over {alpha}(1-4) glycosidic linkages and produces glucose from isomaltose as well as maltose. The preference can be switched by a single mutation at its active site, suggestive of widespread adaptation to utilization of a variety of polysaccharides by intestinal micro-organisms as energy resources. Novel {alpha}-glucosidase from human gut microbiome: substrate specificities and their switch.

  7. A novel homozygous mutation at the GAA gene in Mexicans with early-onset Pompe disease.

    PubMed

    Esmer, Carmen; Becerra-Becerra, Rosario; Peña-Zepeda, Claudia; Bravo-Oro, Antonio

    2013-10-01

    Glycogen-storage disease type II, also named Pompe disease, is caused by the deficiency of the enzyme acid alpha-glucosidase, which originates lysosomal glycogen accumulation leading to progressive neuromuscular damage. Early-onset Pompe disease shows a debilitating and frequently fulminating course. To date, more than 300 mutations have been described; the majority of them are unique to each affected individual. Most early-onset phenotypes are associated with frameshift mutations leading to a truncated alpha-glucosidase protein with loss of function. Founder effects are responsible from many cases from few highprevalence world regions. Herein we described two apparently unrelated cases affected with classical early-onset Pompe disease, both pertaining to a small region from Central Mexico (the State of San Luis Potosí), the same novel homozygous frameshift mutation at gene GAA (c.1987delC) was demonstrated in both cases. This GAA gene deletion implies a change of glutamine to serine at codon 663, and a new reading frame that ends after 33 base pairs, which leads to the translation of a truncated protein. This report contributes to widen the knowledge on the effect of pathogenic mutations in Pompe disease. Here we postulate the existence of a founder effect.

  8. Regional distant sequence homology between amylases, alpha-glucosidases and transglucanosylases.

    PubMed

    Svensson, B

    1988-03-28

    Amylases possess short, conserved regions near functional side chains. Sequence comparison extends this relationship to comprise a maltase and a cyclodextrin glucanotransferase. Similarity also exists with intestinal sucrase-isomaltase and fungal glucoamylase near identified essential carboxyl groups. Homology between COOH-terminal regions of glucoamylase and cyclodextrin glucanotranserase may indicate raw-starch binding areas. It is suggested that amylases, alpha-glucosidases, and transglucanosylases acting on 1,4- and 1,6-alpha-glucosidic linkages share key structural features in the active centres.

  9. An alpha-glucosidase inhibitor from an endophytic Cladosporium sp. with potential as a biocontrol agent.

    PubMed

    Singh, Bahaderjeet; Kaur, Tamanreet; Kaur, Sanehdeep; Manhas, Rajesh K; Kaur, Amarjeet

    2015-02-01

    This study highlights the importance of alpha-glucosidase inhibitors as mechanisms for endophyte-mediated resistance to insect pests. One of the major benefits which endophytes confer on plants is providing resistance against insect pests. This built-in defense mechanism of the plant can be used for exploring ecofriendly strategies for pest control. In the present study, 34 endophytic fungi were isolated from Tinospora cordifolia and screened for their ability to produce alpha-glucosidase inhibitors. Maximum inhibitory activity was observed in an isolate from T. cordifolia (TN-9S), identified to be Cladosporium sp. The inhibitor was purified using chromatographic techniques. The insecticidal activity of the purified inhibitor was evaluated against Spodoptera litura. The inhibitor induced a significant mortality in the larvae of S. litura and adversely affected its survival and development. It also inhibited the activity of α-glycosidases in vivo in the gut of the larvae. The purified inhibitor was determined to be a phenolic compound with amine groups, demonstrating a noncompetitive type of inhibition in vitro. The production of the inhibitor was optimized. Response surface methodology (RSM) analysis revealed a significant interaction between dextrose and malt extract, with first-order effect of pH. PMID:25432333

  10. An alpha-glucosidase inhibitor from an endophytic Cladosporium sp. with potential as a biocontrol agent.

    PubMed

    Singh, Bahaderjeet; Kaur, Tamanreet; Kaur, Sanehdeep; Manhas, Rajesh K; Kaur, Amarjeet

    2015-02-01

    This study highlights the importance of alpha-glucosidase inhibitors as mechanisms for endophyte-mediated resistance to insect pests. One of the major benefits which endophytes confer on plants is providing resistance against insect pests. This built-in defense mechanism of the plant can be used for exploring ecofriendly strategies for pest control. In the present study, 34 endophytic fungi were isolated from Tinospora cordifolia and screened for their ability to produce alpha-glucosidase inhibitors. Maximum inhibitory activity was observed in an isolate from T. cordifolia (TN-9S), identified to be Cladosporium sp. The inhibitor was purified using chromatographic techniques. The insecticidal activity of the purified inhibitor was evaluated against Spodoptera litura. The inhibitor induced a significant mortality in the larvae of S. litura and adversely affected its survival and development. It also inhibited the activity of α-glycosidases in vivo in the gut of the larvae. The purified inhibitor was determined to be a phenolic compound with amine groups, demonstrating a noncompetitive type of inhibition in vitro. The production of the inhibitor was optimized. Response surface methodology (RSM) analysis revealed a significant interaction between dextrose and malt extract, with first-order effect of pH.

  11. Isolation, characterization and chemobiological quantification of alpha-glucosidase enzyme inhibitory and free radical scavenging constituents from Derris scandens Benth.

    PubMed

    Rao, Sridhar A; Srinivas, Pullela V; Tiwari, Ashok K; Vanka, Uma Maheswara S; Rao, Rama V Subba; Dasari, Krishna R; Rao, Madhusudana J

    2007-08-15

    The hexane and chloroform extracts of Derris scandens have displayed potent alpha-glucosidase inhibitory and moderate free radical scavenging activities. Phytochemical investigation of the active extracts led to the isolation of three new prenylated isoflavones, isoscandinone, scandenin A and scandenin B in addition to scandenone, scandinone and 4', 5', 7-trihydroxybiprenylisoflavone as the main constituents, having alpha-glucosidase enzyme inhibitory and free radical scavenging properties. A reversed-phase HPLC method is developed to quantify these active principles in the plant material, which can serve as an effective quality control method for standardization of D. scandens. PMID:17537687

  12. Alpha-glucosidase inhibitory activity of Syzygium cumini (Linn.) Skeels seed kernel in vitro and in Goto-Kakizaki (GK) rats.

    PubMed

    Shinde, Jayantrao; Taldone, Tony; Barletta, Michael; Kunaparaju, Naveen; Hu, Bo; Kumar, Sunil; Placido, Jessica; Zito, S William

    2008-05-19

    Syzygium cumini seed kernel extracts were evaluated for the inhibition of alpha-glucosidase from mammalian (rat intestine), bacterial (Bacillus stearothermophilus), and yeast (Saccharomyces cerevisiae, baker's yeast). In vitro studies using the mammalian alpha-glucosidase from rat intestine showed the extracts to be more effective in inhibiting maltase when compared to the acarbose control. Since acarbose is inactive against both the bacterial and the yeast enzymes, the extracts were compared to 1-deoxynojirimycin. We found all extracts to be more potent against alpha-glucosidase derived from B. stearothermophilus than that against the enzymes from either baker's yeast or rat intestine. In an in vivo study using Goto-Kakizaki (GK) rats, the acetone extract was found to be a potent inhibitor of alpha-glucosidase hydrolysis of maltose when compared to untreated control animals. Therefore, these results point to the inhibition of alpha-glucosidase as a possible mechanism by which this herb acts as an anti-diabetic agent.

  13. Modulation of starch digestion for slow glucose release through "toggling" of activities of mucosal "alpha"-glucosidases

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Starch digestion involves the breakdown by alpha-amylase to small linear and branched malto-oligosaccharides, which are in turn hydrolyzed to glucose by the mucosal alpha-glucosidases, maltase-glucoamylase (MGAM) and sucrase-isomaltase (SI). MGAM and SI are anchored to the small intestinal brush-bor...

  14. AGI, a previously unreported D. melanogaster {alpha}-glucosidase: Partial purification, characterization, and cytogenetic mapping

    SciTech Connect

    Parker, G.F.; Roberts, D.B.

    1996-04-01

    Inbred Drosophila melanogaster stocks were surveyed for {alpha}-glucosidases with nondenaturing gel electrophoresis using a fluorogenic substrate to stain the gels. The glucosidase most active under these conditions is polymorphic. We established that the polymorphism is genetic in origin and that the glucosidase was not likely to be a previously characterized enzyme. The gene encoding the enzyme was mapped cytogenetically to 33 A1-2- 33A8-B1, confirming that this is an enzyme not yet reported in D. melanogaster. The enzyme was partially purified by elution from nondenaturing gels, which enable us to establish that it has optimal activity at pH 6 and interacts most strongly with {alpha}- 1 -4 glucosides. A developmental and tissue survey suggested that this enzyme could have a purely digestive role or be involved in carbohydrate metabolism inside the organism. We propose that this enzyme is involved in either starch digestion or glycogen metabolism. 37 refs., 6 figs., 1 tab.

  15. AGI, a previously unreported D. melanogaster alpha-glucosidase: partial purification, characterization, and cytogenetic mapping.

    PubMed

    Parker, G F; Roberts, D B

    1996-04-01

    Inbred Drosophila melanogaster stocks were surveyed for alpha-glucosidases with nondenaturing gel electrophoresis using a fluorogenic substrate to stain the gels. The glucosidase most active under these conditions is polymorphic. We established that the polymorphism is genetic in origin and that the glucosidase was not likely to be a previously characterized enzyme. The gene encoding the enzyme was mapped cytogenetically to 33 A1-2- 33A8-B1, confirming that this is an enzyme not yet reported in D. melanogaster. The enzyme was partially purified by elution from nondenaturing gels, which enabled us to establish that it has optimal activity at pH 6 and interacts most strongly with alpha-1-4 glucosides. A developmental and tissue survey suggested that this enzyme could have a purely digestive role or be involved in carbohydrate metabolism inside the organism. We propose that this enzyme is involved in either starch digestion or glycogen metabolism.

  16. Inhibitory Properties of Aqueous Ethanol Extracts of Propolis on Alpha-Glucosidase

    PubMed Central

    Zhang, Hongcheng; Wang, Guangxin; Beta, Trust; Dong, Jie

    2015-01-01

    The objective of the present study was to evaluate the inhibitory properties of various extracts of propolis on alpha-glucosidase from baker's yeast and mammalian intestine. Inhibitory activities of aqueous ethanol extracts of propolis were determined by using 4-nitrophenyl-D-glucopyranoside, sucrose and maltose as substrates, and acarbose as a positive reference. All extracts were significantly effective in inhibiting α-glucosidase from baker's yeast and rat intestinal sucrase in comparison with acarbose (P < 0.05). The 75% ethanol extracts of propolis (75% EEP) showed the highest inhibitory effect on α-glucosidase and sucrase and were a noncompetitive inhibition mode. 50% EEP, 95%, EEP and 100% EEP exhibited a mixed inhibition mode, while water extracts of propolis (WEP) and 25% EEP demonstrated a competitive inhibition mode. Furthermore, WEP presented the highest inhibitory activity against maltase. These results suggest that aqueous ethanol extracts of propolis may be used as nutraceuticals for the regulation of postprandial hyperglycemia. PMID:25767553

  17. Molecular cloning and characterization of a Candida tsukubaensis alpha-glucosidase gene in the yeast Saccharomyces cerevisiae.

    PubMed

    Kinsella, B T; Larkin, A; Bolton, M; Cantwell, B A

    1991-07-01

    The molecular cloning of an alpha-glucosidase gene isolated from a Candida tsukubaensis (CBS 6389) genomic library in Saccharomyces cervisiae is reported. The cloned gene is contained within a 6.2 kb Sau3A DNA fragment and directs the synthesis and secretion of an amylolytic enzyme into the extracellular medium of the recombinant host, S. cerevisiae. The cloned enzyme was found to have an unusually broad substrate specificity and is capable of hydrolysing alpha-1,2, alpha-1,3, alpha-1,4 and alpha-1,6 linked, as well as aryl and alkyl, D-glucosides. On the basis of its substrate specificity profile, the cloned enzyme was classified as an alpha-glucosidase (E.C. 3.2.1.20). It has a pH optimum in the range 4.2-4.6, a temperature optimum of 58 degrees C and is readily inactivated at pasteurization temperature (60 degrees C). Southern blot analysis failed to reveal any homology between the cloned gene and genomic DNA isolated from other well characterized amylolytic yeasts. A rapid plate-assay, based on the utilization of a chromogenic substrate X-alpha-D-glucoside to detect the expression of the cloned alpha-glucosidase in S. cerevisiae transformants, was developed. PMID:1934116

  18. Inhibitory effects of hyssop (Hyssopus officinalis) extracts on intestinal alpha-glucosidase activity and postprandial hyperglycemia.

    PubMed

    Miyazaki, Hiroyuki; Matsuura, Hideyuki; Yanagiya, Chikako; Mizutani, Junya; Tsuji, Masayoshi; Ishihara, Chiaki

    2003-10-01

    It has been known that Hyssopus officinalis (hyssop) is a herb that grows in the wild and is a source of natural antioxidants. We previously reported that a-glucosidase inhibitors, (2S, 3S)1-O-beta-D-6'-O-cinnamoylglucopyranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol and (2S, 3S)1-O-beta-D-glucopranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol, from the dry leaves of hyssop, were isolated. This study examined the alpha-glucosidase inhibitory effects of hyssop extracts on intestinal carbohydrate absorption in rat everted gut sac and carbohydrate-loaded hyperglycemia in mice. In the everted gut sac experiment, 10 mM sucrose- and 5 mM maltose-treated increases in glucose concentration in the serosal compartment were inhibited in the presence of 0.5 and 1.0 mg/ mL hyssop extracts, although a 10 mM glucose-induced increase in serosal glucose was not inhibited by the extracts. Additionally, hyperglycemia in sucrose- and maltose-loaded mice was significantly suppressed at an early stage, within 30 to 60 min by oral pre-administration of 300 and 100 mg/kg hyssop extracts, respectively. These findings suggest that hyssop extracts inhibited the digestion of complex carbohydrates, but not that of absorbable monosaccharide, and might be a useful supplemental food for hyperglycemia.

  19. Inhibitory effects of hyssop (Hyssopus officinalis) extracts on intestinal alpha-glucosidase activity and postprandial hyperglycemia.

    PubMed

    Miyazaki, Hiroyuki; Matsuura, Hideyuki; Yanagiya, Chikako; Mizutani, Junya; Tsuji, Masayoshi; Ishihara, Chiaki

    2003-10-01

    It has been known that Hyssopus officinalis (hyssop) is a herb that grows in the wild and is a source of natural antioxidants. We previously reported that a-glucosidase inhibitors, (2S, 3S)1-O-beta-D-6'-O-cinnamoylglucopyranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol and (2S, 3S)1-O-beta-D-glucopranosyl-3-(3", 5"-dimethoxy-4"-hydroxyphenyl)-1,2,3-propanetriol, from the dry leaves of hyssop, were isolated. This study examined the alpha-glucosidase inhibitory effects of hyssop extracts on intestinal carbohydrate absorption in rat everted gut sac and carbohydrate-loaded hyperglycemia in mice. In the everted gut sac experiment, 10 mM sucrose- and 5 mM maltose-treated increases in glucose concentration in the serosal compartment were inhibited in the presence of 0.5 and 1.0 mg/ mL hyssop extracts, although a 10 mM glucose-induced increase in serosal glucose was not inhibited by the extracts. Additionally, hyperglycemia in sucrose- and maltose-loaded mice was significantly suppressed at an early stage, within 30 to 60 min by oral pre-administration of 300 and 100 mg/kg hyssop extracts, respectively. These findings suggest that hyssop extracts inhibited the digestion of complex carbohydrates, but not that of absorbable monosaccharide, and might be a useful supplemental food for hyperglycemia. PMID:14703310

  20. Evaluation of anti-diabetic and alpha glucosidase inhibitory action of anthraquinones from Rheum emodi.

    PubMed

    Arvindekar, Aditya; More, Tanaji; Payghan, Pavan V; Laddha, Kirti; Ghoshal, Nanda; Arvindekar, Akalpita

    2015-08-01

    Rheum emodi is used as a culinary plant across the world and finds an eminent role in the Ayurvedic and traditional Chinese systems of medicine. The plant is known to principally contain 1,8-dihydroxyanthraquinones (DHAQs) like rhein, aloe emodin, emodin, chrysophanol and physcion that possess diverse pharmacological and therapeutic actions. The present work deals with developing a platform technology for isolation of these DHAQs and evaluating their anti-diabetic potential. Herein, we report the anti-hyperglycemic activity and alpha glucosidase (AG) inhibitory actions of five isolated DHAQs from R. emodi. All the five isolated DHAQs showed good anti-hyperglycemic activity with aloe emodin exhibiting maximum lowering of blood glucose in an oral glucose tolerance test. However, on evaluation of the AG inhibitory potential of the DHAQs only emodin exhibited potent intestinal AG inhibition (93 ± 2.16%) with an IC50 notably lower than acarbose. Subsequent kinetic studies indicated a mixed type of inhibition for emodin. In vivo studies using oral maltose load showed almost total inhibition for emodin when compared to acarbose. Molecular docking studies revealed the presence of an allosteric topographically distinct 'quinone binding site' and showed that interaction with Ser 74 occurs exclusively with emodin, which is vital for AG inhibition. The net benefit from the glucose lowering effect and mixed type inhibition by emodin would enable the administration of a small dosage that is safe and non-toxic in the case of prolonged use in treating diabetes. PMID:26145710

  1. Quantitation of Alpha-Glucosidase Activity Using Fluorinated Carbohydrate Array and MALDI-TOF-MS.

    PubMed

    Yang, Hyojik; Chan, Allen L; LaVallo, Vincent; Cheng, Quan

    2016-02-01

    Quantitation of alpha-glucosidase (α-GD) activity is of significance to diagnosis of many diseases including Pompe disease and type II diabetes. We report here a new method to determine α-GD activity using matrix-assisted laser desorption/ionization (MALDI)-time-of-flight (TOF) mass spectrometry (MS) in combination with carbohydrate microarray and affinity surface chemistry. Carbohydrate probes are synthesized for capture of the enzymatic reaction products and the adducts are loaded onto a fluorinated gold surface to generate an array, which is followed by characterization by MALDI-TOF-MS. The ratio of intensities is used to determine the level of activity of several enzymes. In addition, half maximal inhibitory concentration (IC50) of acarbose and epigallocatechin gallate are also determined using this approach, and the results agree well with the reported values. This method is advantageous as compared to conventional colorimetric techniques that typically suffer matrix interference problems from samples. The use of the polyfluorinated surface has effectively suppressed the interference. PMID:26760440

  2. Production and characterization of recombinant human acid α-glucosidase in transgenic rice cell suspension culture.

    PubMed

    Jung, Jae-Wan; Kim, Nan-Sun; Jang, Seon-Hui; Shin, Yun-Ji; Yang, Moon-Sik

    2016-05-20

    Pompe disease is a fatal genetic muscle disorder caused by a deficiency of acid α-glucosidase (GAA), a glycogen-degrading lysosomal enzyme. In this study, the human GAA cDNA gene was synthesized from human placenta cells and cloned into a plant expression vector under the control of the rice α-amylase 3D (RAmy3D) promoter. The plant expression vector was introduced into rice calli (Oryza sativa L. cv. Dongjin) mediated by Agrobacterium tumefaciens. Genomic DNA PCR and Northern blot analysis were used to determine the integration and mRNA expression of the hGAA gene in the putative transgenic rice cells. SDS-PAGE and Western blot analysis showed that the glycosylated precursor recombinant hGAA had a molecular mass of 110kDa due to the presence of seven N-glycosylation sites. The accumulation of hGAA protein in the culture medium was approximately 37mg/L after 11 days of culturing in a sugar depletion medium. The His tagged-hGAA protein was purified using an Ni-NTA column and confirmed as the precursor form of hGAA without the signal peptide encoded by the cDNA on the N-terminal amino acid sequence. The acid alpha-glucosidase activity of hGAA produced in transgenic rice cells gave results similar to those of the enzyme produced by CHO cells. PMID:27050503

  3. Alpha-glucosidase inhibitory activity of Syzygium cumini (Linn.) Skeels seed kernel in vitro and in Goto-Kakizaki (GK) rats.

    PubMed

    Shinde, Jayantrao; Taldone, Tony; Barletta, Michael; Kunaparaju, Naveen; Hu, Bo; Kumar, Sunil; Placido, Jessica; Zito, S William

    2008-05-19

    Syzygium cumini seed kernel extracts were evaluated for the inhibition of alpha-glucosidase from mammalian (rat intestine), bacterial (Bacillus stearothermophilus), and yeast (Saccharomyces cerevisiae, baker's yeast). In vitro studies using the mammalian alpha-glucosidase from rat intestine showed the extracts to be more effective in inhibiting maltase when compared to the acarbose control. Since acarbose is inactive against both the bacterial and the yeast enzymes, the extracts were compared to 1-deoxynojirimycin. We found all extracts to be more potent against alpha-glucosidase derived from B. stearothermophilus than that against the enzymes from either baker's yeast or rat intestine. In an in vivo study using Goto-Kakizaki (GK) rats, the acetone extract was found to be a potent inhibitor of alpha-glucosidase hydrolysis of maltose when compared to untreated control animals. Therefore, these results point to the inhibition of alpha-glucosidase as a possible mechanism by which this herb acts as an anti-diabetic agent. PMID:18374320

  4. Enzyme-assisted extraction of phenolics from winemaking by-products: Antioxidant potential and inhibition of alpha-glucosidase and lipase activities.

    PubMed

    de Camargo, Adriano Costa; Regitano-d'Arce, Marisa Aparecida Bismara; Biasoto, Aline Camarão Telles; Shahidi, Fereidoon

    2016-12-01

    Phenolics in food and agricultural processing by-products exist in the soluble and insoluble-bound forms. The ability of selected enzymes in improving the extraction of insoluble-bound phenolics from the starting material (experiment I) or the residues containing insoluble-bound phenolics (experiment II) were evaluated. Pronase and Viscozyme improved the extraction of insoluble-bound phenolics as evaluated by total phenolic content, antioxidant potential as determined by ABTS and DPPH assays, and hydroxyl radical scavenging capacity, reducing power as well as evaluation of inhibition of alpha-glucosidase and lipase activities. Viscozyme released higher amounts of gallic acid, catechin, and prodelphinidin dimer A compared to Pronase treatment. Furthermore, p-coumaric and caffeic acids, as well as procyanidin dimer B, were extracted with Viscozyme but not with Pronase treatment. Solubility plays an important role in the bioavailability of phenolic compounds, hence this study may assist in better exploitation of phenolics from winemaking by-products as functional food ingredients and/or supplements.

  5. Effect of lipid extracts of Nigella sativa L. seeds on the liver ATP reduction and alpha-glucosidase inhibition.

    PubMed

    Sobhi, Widad; Stevigny, Caroline; Duez, Pierre; Calderon, Bedro Buc; Atmani, Djebbar; Benboubetra, Mustapha

    2016-01-01

    Various extracts from the seeds of Nigella sativa have been used in traditional folk medicine to treat inflammation, liver disorders and arthritis. These seeds have been experimentally shown to possess antioxidant and hepatoprotective properties. Beside the hypoglycaemic and hypolipidemic effects, this study was carried out to evaluate, in vitro, toxicological effect of lipid extracts from the Nigella sativa seeds. The tested fractions were: (i) defatted methanolic extract, (ii) total lipid extract obtained by hexane extraction from methanolic extract and (iii) neutral and polar lipid fractions. The fractions were assessed, in vitro, for their inhibitory activity potential on the enzyme alpha-glucosidase as suppressing the enzyme activity is one among the therapeutic approaches to attenuate postprandial hyperglycemia. High inhibition of alpha-glucosidase by the two polar lipid fractions (F6 and F7) was reflected by their IC50 (0.51±0.04mg/ml and 0.55±0.09mg/ml, respectively), compared to acarbose (0.53±0.06mg/ml) and thymoquinone (0.65±0.05mg/ml). The hypoglycaemic effect of the polar lipid fraction of Nigella sativa could be explained by the inhibition of alpha-glucosidase, which is one of early steps of carbohydrate metabolism. Toxicological evaluation was investigated on precision-cut rat liver slices (PCLS). On PCLS, lipid extracts reduced ATP levels by 27 to 35%. Results indicate suggest that Nigella sativa extracts don't show a hepatoprotective effect against acetaminophen, but don't exhibit a major hepatotoxicity when tested alone.

  6. Effect of lipid extracts of Nigella sativa L. seeds on the liver ATP reduction and alpha-glucosidase inhibition.

    PubMed

    Sobhi, Widad; Stevigny, Caroline; Duez, Pierre; Calderon, Bedro Buc; Atmani, Djebbar; Benboubetra, Mustapha

    2016-01-01

    Various extracts from the seeds of Nigella sativa have been used in traditional folk medicine to treat inflammation, liver disorders and arthritis. These seeds have been experimentally shown to possess antioxidant and hepatoprotective properties. Beside the hypoglycaemic and hypolipidemic effects, this study was carried out to evaluate, in vitro, toxicological effect of lipid extracts from the Nigella sativa seeds. The tested fractions were: (i) defatted methanolic extract, (ii) total lipid extract obtained by hexane extraction from methanolic extract and (iii) neutral and polar lipid fractions. The fractions were assessed, in vitro, for their inhibitory activity potential on the enzyme alpha-glucosidase as suppressing the enzyme activity is one among the therapeutic approaches to attenuate postprandial hyperglycemia. High inhibition of alpha-glucosidase by the two polar lipid fractions (F6 and F7) was reflected by their IC50 (0.51±0.04mg/ml and 0.55±0.09mg/ml, respectively), compared to acarbose (0.53±0.06mg/ml) and thymoquinone (0.65±0.05mg/ml). The hypoglycaemic effect of the polar lipid fraction of Nigella sativa could be explained by the inhibition of alpha-glucosidase, which is one of early steps of carbohydrate metabolism. Toxicological evaluation was investigated on precision-cut rat liver slices (PCLS). On PCLS, lipid extracts reduced ATP levels by 27 to 35%. Results indicate suggest that Nigella sativa extracts don't show a hepatoprotective effect against acetaminophen, but don't exhibit a major hepatotoxicity when tested alone. PMID:26826824

  7. In vitro potential of Ascophyllum nodosum phenolic antioxidant-mediated alpha-glucosidase and alpha-amylase inhibition.

    PubMed

    Apostolidis, E; Lee, C M

    2010-04-01

    Ascophyllum nodosum is a brown seaweed that grows abundantly in the Northeast coastal region. In this study, the potential of A. nodosum for type 2 diabetes management through antioxidant-mediated alpha-glucosidase and alpha-amylase inhibition was investigated. After the initial screening of 4 locally harvested seaweeds, A. nodosum was chosen for its highest phenolic content and was subjected to water extraction. Among extraction ratios of 50 g to 100 to 1000 mL at room temperature, 50 g/400 mL yielded the highest phenolic content of 4.5 mg/g wet weight. For evaluation of extraction temperature ranging from 20 to 80 degrees C, 50 g/400 mL was chosen as a minimum amount of extractant. Among temperatures studied, extraction at 80 degrees C resulted in the highest total phenolic contents (4.2 mg/g wet weight). All extracts had similar levels of antioxidant activity in the range of 60% to 70% in terms of 1, 1-diphenyl-2-picrylhydrazyl (DPPH) free radical scavenging activity. The 80 degrees C extract had the highest alpha-glucosidase and alpha-amylase inhibitory activity with IC(50) of 0.24 and 1.34 microg phenolics, respectively, compared to the IC(50) of acarbose, reference inhibitor, being 0.37 and 0.68 microg. The results show that fresh A. nodosum has strong alpha-glucosidase and mild alpha-amylase inhibitory activities that correlated with phenolic contents. This study suggests a nutraceutical potential of A. nodosum based on phytochemical antioxidant and antihyperglycemia activities.

  8. In vitro potential of Ascophyllum nodosum phenolic antioxidant-mediated alpha-glucosidase and alpha-amylase inhibition.

    PubMed

    Apostolidis, E; Lee, C M

    2010-04-01

    Ascophyllum nodosum is a brown seaweed that grows abundantly in the Northeast coastal region. In this study, the potential of A. nodosum for type 2 diabetes management through antioxidant-mediated alpha-glucosidase and alpha-amylase inhibition was investigated. After the initial screening of 4 locally harvested seaweeds, A. nodosum was chosen for its highest phenolic content and was subjected to water extraction. Among extraction ratios of 50 g to 100 to 1000 mL at room temperature, 50 g/400 mL yielded the highest phenolic content of 4.5 mg/g wet weight. For evaluation of extraction temperature ranging from 20 to 80 degrees C, 50 g/400 mL was chosen as a minimum amount of extractant. Among temperatures studied, extraction at 80 degrees C resulted in the highest total phenolic contents (4.2 mg/g wet weight). All extracts had similar levels of antioxidant activity in the range of 60% to 70% in terms of 1, 1-diphenyl-2-picrylhydrazyl (DPPH) free radical scavenging activity. The 80 degrees C extract had the highest alpha-glucosidase and alpha-amylase inhibitory activity with IC(50) of 0.24 and 1.34 microg phenolics, respectively, compared to the IC(50) of acarbose, reference inhibitor, being 0.37 and 0.68 microg. The results show that fresh A. nodosum has strong alpha-glucosidase and mild alpha-amylase inhibitory activities that correlated with phenolic contents. This study suggests a nutraceutical potential of A. nodosum based on phytochemical antioxidant and antihyperglycemia activities. PMID:20492300

  9. Binding mode analyses and pharmacophore model development for sulfonamide chalcone derivatives, a new class of alpha-glucosidase inhibitors.

    PubMed

    Bharatham, Kavitha; Bharatham, Nagakumar; Park, Ki Hun; Lee, Keun Woo

    2008-06-01

    Sulfonamide chalcone derivatives are a new class of non-saccharide compounds that effectively inhibit glucosidases which are the major targets in the treatment of Type 2 diabetes and HIV infection. Our aim is to explore their binding mode of interaction at the active site by comparing with the sugar derivatives and to develop a pharmacophore model which would represent the critical features responsible for alpha-glucosidase inhibitory activity. The homology modeled structure of Saccharomyces cerevisiae alpha-glucosidase was built and used for molecular docking of non-sugar/sugar derivatives. The validated docking results projected the crucial role of NH group in the binding of sugar/non-sugar derivatives to the active site. Ligplot analyses revealed that Tyr71, and Phe177 form hydrophobic interactions with sugar/non-sugar derivatives by holding the terminal glycosidic ring mimics. Molecular dynamic (MD) simulation studies were performed for protein alone and with chalcone derivative to prove its binding mechanism as shown by docking/Ligplot results. It would also help to substantiate the homology modeled structure stability. With the knowledge of the crucial interactions between ligand and protein from docking and MD simulation studies, features for pharmacophore model development were chosen. The CATALYST/HipHop was used to generate a five featured pharmacophore model with a training set of five non-sugar derivatives. As validation, all the crucial features of the model were perfectly mapped onto the 3D structures of the sugar derivatives as well as the newly tested non-sugar derivatives. Thus, it can be useful in virtual screening for finding new non-sugar derivatives as alpha-glucosidase inhibitors. PMID:18096420

  10. Binding mode analyses and pharmacophore model development for sulfonamide chalcone derivatives, a new class of alpha-glucosidase inhibitors.

    PubMed

    Bharatham, Kavitha; Bharatham, Nagakumar; Park, Ki Hun; Lee, Keun Woo

    2008-06-01

    Sulfonamide chalcone derivatives are a new class of non-saccharide compounds that effectively inhibit glucosidases which are the major targets in the treatment of Type 2 diabetes and HIV infection. Our aim is to explore their binding mode of interaction at the active site by comparing with the sugar derivatives and to develop a pharmacophore model which would represent the critical features responsible for alpha-glucosidase inhibitory activity. The homology modeled structure of Saccharomyces cerevisiae alpha-glucosidase was built and used for molecular docking of non-sugar/sugar derivatives. The validated docking results projected the crucial role of NH group in the binding of sugar/non-sugar derivatives to the active site. Ligplot analyses revealed that Tyr71, and Phe177 form hydrophobic interactions with sugar/non-sugar derivatives by holding the terminal glycosidic ring mimics. Molecular dynamic (MD) simulation studies were performed for protein alone and with chalcone derivative to prove its binding mechanism as shown by docking/Ligplot results. It would also help to substantiate the homology modeled structure stability. With the knowledge of the crucial interactions between ligand and protein from docking and MD simulation studies, features for pharmacophore model development were chosen. The CATALYST/HipHop was used to generate a five featured pharmacophore model with a training set of five non-sugar derivatives. As validation, all the crucial features of the model were perfectly mapped onto the 3D structures of the sugar derivatives as well as the newly tested non-sugar derivatives. Thus, it can be useful in virtual screening for finding new non-sugar derivatives as alpha-glucosidase inhibitors.

  11. Functional significance of amylase polymorphism in Drosophila melanogaster. III. Ontogeny of amylase and some alpha-glucosidases.

    PubMed

    Hoorn, A J; Scharloo, W

    1980-02-01

    Changes in amylase (E.C. 3.2.1.1), maltase (E.C. 3.2.1.20), sucrase, and PNPGase activities in relation to changes in wet weight and protein content were studied during the development of larvae and adult flies from two strains of Drosophila melanogaster, homozygous for different amylase alleles. All alpha-glucosidase activities increase exponentially during a large part of larval development, parallel to the increase in weight, and drop at the end of the third instar. Amylase activity of the Amy1 strain follows the same pattern. In contrast, amylase activity of the Amy4,6 strain continues its exponential increase longer. In the third larval instar amylase activity in the Amy4,6 strain becomes much higher than in the Amy1 strain. During the first hours of adult life amylase activity of the two strains does not differ. Then Amy4,6 activity starts to rise and becomes much higher (4-5 times) than Amy1 amylase activity, which remains approximately constant. All adult enzyme activities are much higher than in larvae. Comparison of enzyme activity of amylase and alpha-glucosidases in larvae and adults confirms that differences in amylase activities can become important only when starch is a limiting factor in the food.

  12. Enzyme-synthesized highly branched maltodextrins have slow glucose generation at the mucosal alpha-glucosidase level and are slowly digestible "in vivo"

    Technology Transfer Automated Retrieval System (TEKTRAN)

    For digestion of starch in humans, alpha-amylase first hydrolyzes starch molecules to produce alpha-limit dextrins, followed by complete hydrolysis to glucose by the mucosal alpha-glucosidases in the small intestine. It is known that alpha-1,6 linkages in starch are hydrolyzed at a lower rate than a...

  13. The loss of a polymorphic glycosylation site caused by Thr-927 [yields] Ile is linked to a second polymorphic Val-816 [yields] Ile substitution in lysosomal [alpha]-glucosidase of American blacks

    SciTech Connect

    Hermans, M.M.P.; Oostra, B.A.; Reuser, A.J.J. ); Svetkey, L.P.; Chen, Y.T. )

    1993-04-01

    Inherited deficiency of the lysosomal hydrolase [alpha]-glucosidase (acid maltase) causes lysosomal accumulation of glycogen, a condition known as glycogen storage disease type II (GSD II). The clinical phenotype is heterogeneous, and heterogeneity also exists at the molecular level. Point mutations were recently identified in two cases of severe infantile and one case of adult GSD II. In addition to mutations with a deleterious effect on enzyme function, several polymorphisms have been documented. Of note are those polymorphisms that relate to racial differences, but they can pose a problem when mutant alleles are being analyzed. An example of this was an American black patient with an adult form of GSD II (GM1935). Mutation analysis revealed three amino acid substitutions that were not encountered in the Caucasian population. The three substitutions were Asp-645 [r arrow] Glu (exon 14), Val-816 [r arrow] Ile (exon 17), and Thr-927 [r arrow] Ile (exon 19), and they were linked to the same allele . The Thr-927 [r arrow] Ile substitution deleting the most carboxyl-terminal N-linked glycosylation site was found to have no effect on enzyme function, in agreement with the studies on the role of the individual glycosylation sites. There were different opinions, however, with respect to the effect of the other two substitutions. The Val-816 [r arrow] Ile substitution was reported by Martiniuk et al. to cause the lysosomal [alpha]-glucosidase deficiency, but the authors concluded on the basis of more extensive studies that the Asp-645[r arrow] Glu substitution was actually the deleterious mutation and the Val-816 [r arrow] Ile substitution a polymorphism. 8 refs., 1 fig.

  14. Biological indicators for steam sterilization: characterization of a rapid biological indicator utilizing Bacillus stearothermophilus spore-associated alpha-glucosidase enzyme.

    PubMed

    Albert, H; Davies, D J; Woodson, L P; Soper, C J

    1998-11-01

    The alpha-glucosidase enzyme was isolated from vegetative cells and spores of Bacillus stearothermophilus, ATCC 7953. Spore-associated enzyme had a molecular weight of approximately 92,700, a temperature optimum of 60 degrees C, and a pH optimum of 7.0-7.5. The enzyme in crude aqueous spore extract was stable for 30 min up to a temperature of 65 degrees C, above which the enzyme was rapidly denatured. The optimal pH for stability of the enzyme was approximately 7.2. The alpha-glucosidase in crude vegetative cell extract had similar characteristics to the spore-associated enzyme but its molecular weight was 86,700. The vegetative cell and spore-associated enzymes were cross-reactive. The enzymes are postulated to derive from a single gene product, which undergoes modification to produce the spore-associated form. The location of alpha-glucosidase in the spore coats (outside the spore protoplast) is consistent with the location of most enzymes involved in activation, germination and outgrowth. PMID:9830122

  15. Alpha-glucosidase inhibitors and hepatotoxicity in type 2 diabetes: a systematic review and meta-analysis.

    PubMed

    Zhang, Longhao; Chen, Qiyan; Li, Ling; Kwong, Joey S W; Jia, Pengli; Zhao, Pujing; Wang, Wen; Zhou, Xu; Zhang, Mingming; Sun, Xin

    2016-01-01

    Alpha-glucosidase inhibitors (AGIs) was reported to be associated with several rare adverse hepatic events, but with inconsistent results. We aimed to investigate the risk of hepatotoxicity associated with the use of AGIs in patients with type 2 diabetes mellitus (T2DM), and performed a systematic review and meta-analysis. Fourteen studies (n = 2881) were eligible, all of which were RCTs. Meta-analysis of data regarding elevation of more than 3-fold the upper limit of normal (ULN) of AST and ALT showed statistically significant differences between AGIs treatment versus control (OR 6.86, 95% CI 2.50 to 18.80; OR 6.48, 95% CI 2.40 to 17.49). Subgroup analyses of elevation of more than 1.8-fold ULN of AST and ALT by dose of AGIs showed differential effects on AST and ALT (AST: OR 0.38 vs 7.31, interaction P = 0.003; ALT: OR 0.32 vs 4.55, interaction p = 0.02). Meta-analysis showed that AGIs might increase the risk of hepatotoxicity, and higher dose appeared to be associated with higher risk of hepatotoxicity. However, the evidence is limited with surrogate measures (i.e. ALT and AST), and no clinically important adverse events were observed. PMID:27596383

  16. Alpha-glucosidase inhibitors and hepatotoxicity in type 2 diabetes: a systematic review and meta-analysis

    NASA Astrophysics Data System (ADS)

    Zhang, Longhao; Chen, Qiyan; Li, Ling; Kwong, Joey S. W.; Jia, Pengli; Zhao, Pujing; Wang, Wen; Zhou, Xu; Zhang, Mingming; Sun, Xin

    2016-09-01

    Alpha-glucosidase inhibitors (AGIs) was reported to be associated with several rare adverse hepatic events, but with inconsistent results. We aimed to investigate the risk of hepatotoxicity associated with the use of AGIs in patients with type 2 diabetes mellitus (T2DM), and performed a systematic review and meta-analysis. Fourteen studies (n = 2881) were eligible, all of which were RCTs. Meta-analysis of data regarding elevation of more than 3-fold the upper limit of normal (ULN) of AST and ALT showed statistically significant differences between AGIs treatment versus control (OR 6.86, 95% CI 2.50 to 18.80; OR 6.48, 95% CI 2.40 to 17.49). Subgroup analyses of elevation of more than 1.8-fold ULN of AST and ALT by dose of AGIs showed differential effects on AST and ALT (AST: OR 0.38 vs 7.31, interaction P = 0.003 ALT: OR 0.32 vs 4.55, interaction p = 0.02). Meta-analysis showed that AGIs might increase the risk of hepatotoxicity, and higher dose appeared to be associated with higher risk of hepatotoxicity. However, the evidence is limited with surrogate measures (i.e. ALT and AST), and no clinically important adverse events were observed.

  17. d-Psicose Inhibits Intestinal alpha-Glucosidase and Suppresses the Glycemic Response after Ingestion of Carbohydrates in Rats.

    PubMed

    Matsuo, Tatsuhiro; Izumori, Ken

    2009-09-01

    d-psicose is one of the rare sugars present in small quantities in commercial carbohydrates and agricultural products. In this study, we investigated the effects of d-psicose on the activities of alpha-amylases and alpha-glucosidases in vitro, and evaluated the effects of d-psicose on the in vivo postprandial glycemic response using rats. In the in vitro study, d-psicose potently inhibited the intestinal sucrase and maltase, however, slightly inhibited the intestinal and salivary alpha-amylase activities. Male Wistar rats (6 months old) were administrated 2 g/kg of sucrose, maltose or soluble starch together with 0.2 g/kg of d-psicose or d-fructose. The d-psicose significantly inhibited the increment of plasma glucose concentration induced by sucrose or maltose. The starch-induced glycemic response tended to be suppressed by d-psicose, however the suppression was not significant. These results suggest that d-psicose inhibits intestinal sucrase and maltase activities and suppresses the plasma glucose increase the normally occurs after sucrose and maltose ingestion. Thus, d-psicose may be useful in preventing postprandial hyperglycemia in diabetic patients when foods containing sucrose and maltose are ingested.

  18. Alpha-glucosidase inhibitors and hepatotoxicity in type 2 diabetes: a systematic review and meta-analysis

    PubMed Central

    Zhang, Longhao; Chen, Qiyan; Li, Ling; Kwong, Joey S. W.; Jia, Pengli; Zhao, Pujing; Wang, Wen; Zhou, Xu; Zhang, Mingming; Sun, Xin

    2016-01-01

    Alpha-glucosidase inhibitors (AGIs) was reported to be associated with several rare adverse hepatic events, but with inconsistent results. We aimed to investigate the risk of hepatotoxicity associated with the use of AGIs in patients with type 2 diabetes mellitus (T2DM), and performed a systematic review and meta-analysis. Fourteen studies (n = 2881) were eligible, all of which were RCTs. Meta-analysis of data regarding elevation of more than 3-fold the upper limit of normal (ULN) of AST and ALT showed statistically significant differences between AGIs treatment versus control (OR 6.86, 95% CI 2.50 to 18.80; OR 6.48, 95% CI 2.40 to 17.49). Subgroup analyses of elevation of more than 1.8-fold ULN of AST and ALT by dose of AGIs showed differential effects on AST and ALT (AST: OR 0.38 vs 7.31, interaction P = 0.003; ALT: OR 0.32 vs 4.55, interaction p = 0.02). Meta-analysis showed that AGIs might increase the risk of hepatotoxicity, and higher dose appeared to be associated with higher risk of hepatotoxicity. However, the evidence is limited with surrogate measures (i.e. ALT and AST), and no clinically important adverse events were observed. PMID:27596383

  19. Miconia sp. Increases mRNA Levels of PPAR Gamma and Inhibits Alpha Amylase and Alpha Glucosidase

    PubMed Central

    Ortíz-Martinez, David Mizael; Rivas-Morales, Catalina; de la Garza-Ramos, Myriam Angelica; Verde-Star, Maria Julia; Nuñez-Gonzalez, Maria Adriana

    2016-01-01

    Diabetes mellitus is a public health problem worldwide. For this reason, ethanolic extract of Miconia sp. from Oaxaca, Mexico, was selected in search of an alternative against this disease. The effect of Miconia sp. on mRNA expression of PPARγ on cell line 3T3-L1, its effect on alpha amylase and alpha glucosidase, lipid accumulation during adipogenesis, and cell viability on VERO cells were evaluated. The mRNA levels of PPARγ increased on 1.393 ± 0.008 folds, lipid accumulation was increased by 29.55% with Miconia sp. extract and 34.57% with rosiglitazone, and α-amylase and α-glycosidase were inhibited with IC50 values from 28.23 ± 2.15 μg/mL and 1.95 ± 0.15 μg/mL, respectively; the IC50 on antiproliferative activity on VERO cells was 314.54 ± 45.40 μg/mL. In case of α-amylase and α-glycosidase assays, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of enzymatic activity. On the other hand, on antiproliferative activity, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of cell proliferation. It was concluded that the compounds present in Miconia sp. ethanolic extract increase mRNA expression of PPARγ, inhibit α-amylase and α-glucosidase, and increase lipid accumulation. It constitutes an alternative as adjuvant in diabetes mellitus treatment; therefore, we recommend continuing identifying the compounds responsible for its promising in vivo antidiabetic activity. PMID:27478477

  20. Miconia sp. Increases mRNA Levels of PPAR Gamma and Inhibits Alpha Amylase and Alpha Glucosidase.

    PubMed

    Ortíz-Martinez, David Mizael; Rivas-Morales, Catalina; de la Garza-Ramos, Myriam Angelica; Verde-Star, Maria Julia; Nuñez-Gonzalez, Maria Adriana; Leos-Rivas, Catalina

    2016-01-01

    Diabetes mellitus is a public health problem worldwide. For this reason, ethanolic extract of Miconia sp. from Oaxaca, Mexico, was selected in search of an alternative against this disease. The effect of Miconia sp. on mRNA expression of PPARγ on cell line 3T3-L1, its effect on alpha amylase and alpha glucosidase, lipid accumulation during adipogenesis, and cell viability on VERO cells were evaluated. The mRNA levels of PPARγ increased on 1.393 ± 0.008 folds, lipid accumulation was increased by 29.55% with Miconia sp. extract and 34.57% with rosiglitazone, and α-amylase and α-glycosidase were inhibited with IC50 values from 28.23 ± 2.15 μg/mL and 1.95 ± 0.15 μg/mL, respectively; the IC50 on antiproliferative activity on VERO cells was 314.54 ± 45.40 μg/mL. In case of α-amylase and α-glycosidase assays, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of enzymatic activity. On the other hand, on antiproliferative activity, IC50 (inhibitory concentration 50) refers to necessary extract amounts to inhibit 50% of cell proliferation. It was concluded that the compounds present in Miconia sp. ethanolic extract increase mRNA expression of PPARγ, inhibit α-amylase and α-glucosidase, and increase lipid accumulation. It constitutes an alternative as adjuvant in diabetes mellitus treatment; therefore, we recommend continuing identifying the compounds responsible for its promising in vivo antidiabetic activity. PMID:27478477

  1. Identification and characterization of aberrant GAA pre-mRNA splicing in pompe disease using a generic approach.

    PubMed

    Bergsma, Atze J; Kroos, Marian; Hoogeveen-Westerveld, Marianne; Halley, Dicky; van der Ploeg, Ans T; Pijnappel, W W

    2015-01-01

    Identification of pathogenic variants in monogenic diseases is an important aspect of diagnosis, genetic counseling, and prediction of disease severity. Pathogenic mechanisms involved include changes in gene expression, RNA processing, and protein translation. Variants affecting pre-mRNA splicing are difficult to predict due to the complex mechanism of splicing regulation. A generic approach to systematically detect and characterize effects of sequence variants on splicing would improve current diagnostic practice. Here, it is shown that such approach is feasible by combining flanking exon RT-PCR, sequence analysis of PCR products, and exon-internal quantitative RT-PCR for all coding exons. Application of this approach to one novel and six previously published variants in the acid-alpha glucosidase (GAA) gene causing Pompe disease enabled detection of a total of 11 novel splicing events. Aberrant splicing included cryptic splice-site usage, intron retention, and exon skipping. Importantly, the extent of leaky wild-type splicing correlated with disease onset and severity. These results indicate that this approach enables sensitive detection and in-depth characterization of variants affecting splicing, many of which are still unrecognized or poorly understood. The approach is generic and should be adaptable for application to other monogenic diseases to aid in improved diagnostics. PMID:25243733

  2. Occurrence of the alpha-glucosidase inhibitor 1,4-Dideoxy-1,4-imino-D-arabinitol and related iminopentitols in marine sponges.

    PubMed

    Saludes, Jonel P; Lievens, Sarah C; Molinski, Tadeusz F

    2007-03-01

    The alpha-glucosidase inhibitor 1,4-dideoxy-1,4-imino-D-arabinitol (1) was isolated from two marine sponges collected in Western Australia and shown by LC-MS to be responsible for the alpha-glycosidase inhibitory activity in different sponge extracts collected over a wide geographic area. The configuration of 1 was determined by application of Marfey's method. The two most inhibitory extracts contained only 1, while the less inhibitory extracts contained 1,4-dideoxy-1,4-imino-D-xylitol (2) or the putative diastereomeric imino pentitols 3 and 4. The least active or inactive extracts showed no detectable imino pentitols. While both 1 and 2 are known from plants, this is the first report on the isolation and detection of 1 and 2 in marine invertebrates.

  3. Insulin secreting and alpha-glucosidase inhibitory activity of hexane extract of Annona squamosa Linn. in streptozotocin (STZ) induced diabetic rats.

    PubMed

    Ranjana; Tripathi, Yamini B

    2014-06-01

    The hexane extract of A. squamosa (ASHE) in 100 and 400 mg/kg body weight dose raised the insulin level when compared with Glimepiride (1 mg/kg) and also inhibited alpha-glucosidase activity when compared with Acarbose (10 mg/kg) in streptozotocin induced diabetic rats. The ASHE significantly reduced peak blood glucose (Gp30) and area under curve (AUC) in diabetic rats in oral glucose (OGTT) and oral sucrose (OSTT) tolerance test, but there was more reduction of Gp30 value than AUC in OSTT. Thus, it can be suggested that the ASHE, has hypoglycemic role at 2 levels, i.e. it acts as secretagogue and also inhibits the intestinal enzymes, responsible for glucose metabolism. PMID:24956893

  4. Insulin secreting and alpha-glucosidase inhibitory activity of hexane extract of Annona squamosa Linn. in streptozotocin (STZ) induced diabetic rats.

    PubMed

    Ranjana; Tripathi, Yamini B

    2014-06-01

    The hexane extract of A. squamosa (ASHE) in 100 and 400 mg/kg body weight dose raised the insulin level when compared with Glimepiride (1 mg/kg) and also inhibited alpha-glucosidase activity when compared with Acarbose (10 mg/kg) in streptozotocin induced diabetic rats. The ASHE significantly reduced peak blood glucose (Gp30) and area under curve (AUC) in diabetic rats in oral glucose (OGTT) and oral sucrose (OSTT) tolerance test, but there was more reduction of Gp30 value than AUC in OSTT. Thus, it can be suggested that the ASHE, has hypoglycemic role at 2 levels, i.e. it acts as secretagogue and also inhibits the intestinal enzymes, responsible for glucose metabolism.

  5. Pompe Disease

    MedlinePlus

    ... by mutations in a gene that makes an enzyme called acid alpha-glucosidase (GAA). Normally, the body ... stored form of sugar used for energy. The enzyme performs its function in intracellular compartments called lysosomes. ...

  6. A simple and efficient synthesis of novel inhibitors of alpha-glucosidase based on benzimidazole skeleton and molecular docking studies.

    PubMed

    Özil, Musa; Emirik, Mustafa; Etlik, Semiha Yılmaz; Ülker, Serdar; Kahveci, Bahittin

    2016-10-01

    A novel series of benzimidazole derivatives were prepared starting from o-phenylenediamine and 4-nitro-o-phenylenediamine with iminoester hydrochlorides. Acidic proton in benzimidazole was exchanged with ethyl bromoacetate, then ethyl ester group was transformed into hydrazide group. Cyclization using CS2/KOH leads to the corresponding 1,3,4-oxadiazole derivative, which was treated with phenyl isothiocyanate resulted in carbothioamide group, respectively. As the target compounds, triazole derivative was obtained under basic condition and thiadiazole derivative was obtained under acidic condition from cyclization of carbothioamide group. Most reactions were conducted using both the microwave and conventional methods to compare yields and reaction times. All compounds obtained in this study were investigated for α-glucosidase inhibitor activity. Compounds 6a, 8a, 4b, 5b, 6b and 7b were potent inhibitors with IC50 values ranging from 10.49 to 158.2μM. This has described a new class of α-glucosidase inhibitors. Molecular docking studies were done for all compounds to identify important binding modes responsible for inhibition activity of α-glucosidase. PMID:27572707

  7. Biogenesis of lysosomal enzymes in the alpha-glucosidase II-deficient modA mutant of Dictyostelium discoideum: retention of alpha-1,3-linked glucose on N-linked oligosaccharides delays intracellular transport but does not alter sorting of alpha-mannosidase or beta-glucosidase.

    PubMed

    Ebert, D L; Bush, J M; Dimond, R L; Cardelli, J A

    1989-09-01

    The endoplasmic reticulum-localized enzyme alpha-glucosidase II is responsible for removing the two alpha-1,3-linked glucose residues from N-linked oligosaccharides of glycoproteins. This activity is missing in the modA mutant strain, M31, of Dictyostelium discoideum. Results from both radiolabeled pulse-chase and subcellular fractionation experiments indicate that this deficiency did not prevent intracellular transport and proteolytic processing of the lysosomal enzymes, alpha-mannosidase and beta-glucosidase. However, the rate at which the glucosylated precursors left the rough endoplasmic reticulum was several-fold slower than the rate at which the wild-type precursors left this compartment. Retention of glucose residues did not disrupt the binding of the precursor forms of the enzymes with intracellular membranes, indicating that the delay in movement of proteins from the ER did not result from lack of association with membranes. However, the mutant alpha-mannosidase precursor contained more trypsin-sensitive sites than did the wild-type precursor, suggesting that improper folding of precursor molecules might account for the slow rate of transport to the Golgi complex. Percoll density gradient fractionation of extracts prepared from M31 cells indicated that the proteolytically processed mature forms of alpha-mannosidase and beta-glucosidase were localized to lysosomes. Finally, the mutation in M31 may have other, more dramatic, effects on the lysosomal system since two enzymes, N-acetylglucosaminidase and acid phosphatase, were secreted much less efficiently from lysosomal compartments by the mutant strain.

  8. The importance of starch and sucrose digestion in nutritive biology of synanthropic acaridid mites: alpha-amylases and alpha-glucosidases are suitable targets for inhibitor-based strategies of mite control.

    PubMed

    Erban, Tomas; Erbanova, Michaela; Nesvorna, Marta; Hubert, Jan

    2009-07-01

    The adaptation of nine species of mites that infest stored products for starch utilization was tested by (1) enzymatic analysis using feces and whole mite extracts, (2) biotests, and (3) inhibition experiments. Acarus siro, Aleuroglyphus ovatus, and Tyroborus lini were associated with the starch-type substrates and maltose, with higher enzymatic activities observed in whole mite extracts. Lepidoglyphus destructor was associated with the same substrates but had higher activities in feces. Dermatophagoides farinae, Chortoglyphus arcuatus, and Caloglyphus redickorzevi were associated with sucrose. Tyrophagus putrescentiae and Carpoglyphus lactis had low or intermediate enzymatic activity on the tested substrates. Biotests on starch additive diets showed accelerated growth of species associated with the starch-type substrates. The inhibitor acarbose suppressed starch hydrolysis and growth of the mites. We suggest that the species with higher starch hydrolytic activity in feces were more tolerant to acarbose, and alpha-amylase and alpha-glucosidase of synanthropic mites are suitable targets for inhibitor-based strategies of mite control.

  9. Acid maltase deficiency: a case study and review of the pathophysiological changes and proposed therapeutic measures.

    PubMed Central

    Isaacs, H; Savage, N; Badenhorst, M; Whistler, T

    1986-01-01

    An adult patient with lysosomal acid alpha-glucosidase deficiency was fully investigated, and then placed on various forms of therapy with favourable response to a high protein, low carbohydrate diet. The rationale for the employment of this therapy, the problem of acid maltase deficiency and the relationship to weakness and glycogenosome formation with accumulation or otherwise of glycogen within the muscle fibres is discussed. Images PMID:3093639

  10. Functional characterization of the common c.-32-13T>G mutation of GAA gene: identification of potential therapeutic agents

    PubMed Central

    Dardis, Andrea; Zanin, Irene; Zampieri, Stefania; Stuani, Cristiana; Pianta, Annalisa; Romanello, Milena; Baralle, Francisco E.; Bembi, Bruno; Buratti, Emanuele

    2014-01-01

    Glycogen storage disease type II is a lysosomal storage disorder due to mutations of the GAA gene, which causes lysosomal alpha-glucosidase deficiency. Clinically, glycogen storage disease type II has been classified in infantile and late-onset forms. Most late-onset patients share the leaky splicing mutation c.-32-13T>G. To date, the mechanism by which the c.-32-13T>G mutation affects the GAA mRNA splicing is not fully known. In this study, we demonstrate that the c.-32-13T>G mutation abrogates the binding of the splicing factor U2AF65 to the polypyrimidine tract of exon 2 and that several splicing factors affect exon 2 inclusion, although the only factor capable of acting in the c.-32-13 T>G context is the SR protein family member, SRSF4 (SRp75). Most importantly, a preliminary screening using small molecules described to be able to affect splicing profiles, showed that resveratrol treatment resulted in a significant increase of normal spliced GAA mRNA, GAA protein content and activity in cells transfected with a mutant minigene and in fibroblasts from patients carrying the c-32-13T>G mutation. In conclusion, this work provides an in-depth functional characterization of the c.-32-13T>G mutation and, most importantly, an in vitro proof of principle for the use of small molecules to rescue normal splicing of c.-32-13T>G mutant alleles. PMID:24150945

  11. Pompe disease: literature review and case series.

    PubMed

    Dasouki, Majed; Jawdat, Omar; Almadhoun, Osama; Pasnoor, Mamatha; McVey, April L; Abuzinadah, Ahmad; Herbelin, Laura; Barohn, Richard J; Dimachkie, Mazen M

    2014-08-01

    Pompe disease is a rare multi-systemic metabolic myopathy caused by autosomal recessive mutations in the acidic alpha glucosidase (GAA) gene. Significant progress had been made in the diagnosis and management of patients with Pompe disease. Here, we describe our experience with 12 patients with various forms of Pompe disease including 4 potentially pathogenic, novel GAA variants. We also review the recent the recent advances in the pathogenesis, diagnosis, and treatment of individuals with Pompe disease.

  12. Peeled film GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    1990-01-01

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  13. Oleanolic acid and related derivatives as medicinally important compounds.

    PubMed

    Sultana, Nighat; Ata, Athar

    2008-12-01

    Oleanolic acid has been isolated from chloroform extract of Olea ferruginea Royle after removal of organic bases and free acids. The literature survey revealed it to be biologically very important. In this review the biological significance of oleanolic acid and its derivatives has been discussed. The aim of this review is to update current knowledge on oleanolic acid and its natural and semisynthetic analogs, focussing on its cytotoxic, antitumer, antioxidant, anti-inflamatory, anti-HIV, acetyl cholinesterase, alpha-glucosidase, antimicrobial, hepatoprotective, anti-inflammatory, antipruritic, spasmolytic activity, anti-angiogenic, antiallergic, antiviral and immunomodulatory activities. We present in this review, for the first time, a compilation of the most relevant scientific papers and technical reports of the chemical, pre-clinical and clinical research on the properties of oleanolic acid and its derivatives.

  14. Oleanolic acid and related derivatives as medicinally important compounds.

    PubMed

    Sultana, Nighat; Ata, Athar

    2008-12-01

    Oleanolic acid has been isolated from chloroform extract of Olea ferruginea Royle after removal of organic bases and free acids. The literature survey revealed it to be biologically very important. In this review the biological significance of oleanolic acid and its derivatives has been discussed. The aim of this review is to update current knowledge on oleanolic acid and its natural and semisynthetic analogs, focussing on its cytotoxic, antitumer, antioxidant, anti-inflamatory, anti-HIV, acetyl cholinesterase, alpha-glucosidase, antimicrobial, hepatoprotective, anti-inflammatory, antipruritic, spasmolytic activity, anti-angiogenic, antiallergic, antiviral and immunomodulatory activities. We present in this review, for the first time, a compilation of the most relevant scientific papers and technical reports of the chemical, pre-clinical and clinical research on the properties of oleanolic acid and its derivatives. PMID:18618318

  15. Peeled film GaAs solar cells for space power

    NASA Technical Reports Server (NTRS)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-01-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  16. A GaAs phononic crystal with shallow noncylindrical holes.

    PubMed

    Petrus, Joseph A; Mathew, Reuble; Stotz, James A H

    2014-02-01

    A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs substrate using a citric acid:H2O2 etching procedure and a photolithographed array pattern. Although nonuniform and asymmetric etch rates limit the depth and shape of the phononic crystal holes, the matrix acts as a PnC, as demonstrated by insertion loss measurements together with interferometric imaging of surface acoustic waves propagating on the GaAs surface. The measured vertical displacement induced by surface phonons compares favorably with finite-difference time-domain simulations of a PnC with rounded-square holes.

  17. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  18. Enzyme-Based Lactic Acid Detection Using Algaas/gaas High Electron Mobility Transistor with Sb-Doped Zno Nanowires Grown on the Gate Region

    NASA Astrophysics Data System (ADS)

    Ma, Siwei; Huang, Yunhua; Liu, Hanshuo; Zhang, Xiaohui; Liao, Qingliang

    2012-08-01

    Sb-doped ZnO nanowires were synthesized via chemical vapor deposition method. Scanning electron microscopic, transmission electron microscopic, X-ray diffraction and energy dispersive spectrometer have been used to characterize the morphology and structure of the nanowires. The AlGaAs/GaAs HEMT drain-source current exhibited a fast response of about 1s when different concentrations of lactic acid solutions were added to the surface of lactate oxidase immobilized on the ZnO nanowires. The HEMT could detect a range of lactic acid concentrations from 3 pM to 30 μM. The biosensor exhibited good performance along with fast response, high sensitivity, and long-term stability. Our results demonstrate the possibility of using AlGaAs/GaAs HEMTs for lactic acid measurements and provide new further fundamental insights into the study of nanoscience and nanodevices.

  19. Neuropathology in respiratory-related motoneurons in young Pompe (Gaa(-/-)) mice.

    PubMed

    Turner, Sara M F; Hoyt, Aaron K; ElMallah, Mai K; Falk, Darin J; Byrne, Barry J; Fuller, David D

    2016-06-15

    Respiratory and/or lingual dysfunction are among the first motor symptoms in Pompe disease, a disorder resulting from absence or dysfunction of the lysosomal enzyme acid α-glucosidase (GAA). Here, we histologically evaluated the medulla, cervical and thoracic spinal cords in 6 weeks old asymptomatic Pompe (Gaa(-/-)) mice to determine if neuropathology in respiratory motor regions has an early onset. Periodic acid-Schiff (PAS) staining indicated glycogen accumulation was exclusively occurring in Gaa(-/-) hypoglossal, mid-cervical and upper thoracic motoneurons. Markers of DNA damage (Tunel) and ongoing apoptosis (Cleaved Caspase 3) did not co-localize with PAS staining, but were prominent in a medullary region which included the nucleus tractus solitarius, and also in the thoracic spinal dorsal horn. We conclude that respiratory-related motoneurons are particularly susceptible to GAA deficiency and that neuronal glycogen accumulation and neurodegeneration may occur independently in early stage disease. The data support early therapeutic intervention in Pompe disease. PMID:26921786

  20. Involvement of Agrobacterium tumefaciens Galacturonate Tripartite ATP-Independent Periplasmic (TRAP) Transporter GaaPQM in Virulence Gene Expression

    PubMed Central

    Zhao, Jinlei

    2015-01-01

    Monosaccharides capable of serving as nutrients for the soil bacterium Agrobacterium tumefaciens are also inducers of the vir regulon present in the tumor-inducing (Ti) plasmid of this plant pathogen. One such monosaccharide is galacturonate, the predominant monomer of pectin found in plant cell walls. This ligand is recognized by the periplasmic sugar binding protein ChvE, which interacts with the VirA histidine kinase that controls vir gene expression. Although ChvE is also a member of the ChvE-MmsAB ABC transporter involved in the utilization of many neutral sugars, it is not involved in galacturonate utilization. In this study, a putative tripartite ATP-independent periplasmic (TRAP) transporter, GaaPQM, is shown to be essential for the utilization of galacturonic acid; we show that residue R169 in the predicted sugar binding site of the GaaP is required for activity. The gene upstream of gaaPQM (gaaR) encodes a member of the GntR family of regulators. GaaR is shown to repress the expression of gaaPQM, and the repression is relieved in the presence of the substrate for GaaPQM. Moreover, GaaR is shown to bind putative promoter regions in the sequences required for galacturonic acid utilization. Finally, A. tumefaciens strains carrying a deletion of gaaPQM are more sensitive to galacturonate as an inducer of vir gene expression, while the overexpression of gaaPQM results in strains being less sensitive to this vir inducer. This supports a model in which transporter activity is crucial in ensuring that vir gene expression occurs only at sites of high ligand concentration, such as those at a plant wound site. PMID:26637603

  1. Resonant Transport in Nb/gaas/algaas/gaas Microstructures

    NASA Astrophysics Data System (ADS)

    Giazotto, F.; Pingue, P.; Beltram, F.; Lazzarino, M.; Orani, D.; Rubini, S.; Franciosi, A.

    2003-03-01

    Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs in presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in all-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

  2. An alternative mechanism for guanidinoacetic acid to affect methylation cycle.

    PubMed

    Ostojic, Sergej M

    2014-12-01

    Guanidinoacetic acid (also known as glycocyamine; GAA) is an endogenous substance which occurs in humans and plays a central role in the biosynthesis of creatine. The formation of creatine from GAA consumes methyl groups, and increases production of homocysteine. GAA may have the potential to stimulate insulin secretion. Insulin reduces plasma homocysteine and raises methyl group supply. It is possible that the ability of GAA to trigger the insulin secretion modulates methyl group metabolism, and comparatively counterbalance for the direct effect of GAA on increased methylation demand. Possible insulinotropic effect of GAA may contribute to total in vivo methylation demand during biotransformation. PMID:25468046

  3. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  4. Effects of deuterium substitution alpha and beta to the reaction centre, 18O substitution in the leaving group, and aglycone acidity on hydrolyses of aryl glucosides and glucosyl pyridinium ions by yeast alpha-glucosidase. A probable failure of the antiperiplanar-lone-pair hypothesis in glycosidase catalysis.

    PubMed Central

    Hosie, L; Sinnott, M L

    1985-01-01

    Neither kcat. nor kcat./Km for five aryl alpha-D-glucopyranosides correlates with aglycone pKa, and isotope effects, described according to the convention used by Cleland [(1982) CRC Crit. Rev. Biochem. 13, 385-428], of 18(V) = 1.002 +/- 0.008, alpha D(V) = 1.01 +/- 0.04 and alpha D(V/K) = 0.969 +/- 0.035 are observed for p-nitrophenyl, and one of beta D(V) = 1.02 +/- 0.04 for phenyl alpha-D-glucopyranoside; kcat. but not kcat./Km, correlates with aglycone pKa for five alpha-D-glucopyranosyl pyridinium ions with a Brønsted coefficient of -0.61 +/- 0.06, and isotope effects of alpha D(V) = 1.22 +/- 0.02, beta D(V) = 1.13 +/- 0.01 and alpha D(V/K) = 1.018 +/- 0.046 for the 4-bromoisoquinolinium, and alpha D(V) = 1.15 +/- 0.02 and beta D(V) = 1.085 +/- 0.011 for the pyridinium salts are observed. These data require that a non-covalent event, fast in the case of the N-glycosides but slow in the case of the O-glycosides, precedes bond-breaking, and that bond-breaking involves substantial charge development on the glycone and near-perpendicularity of the C2-H bond to the planar oxocarbonium ion system. A model meeting these requirements is that the non-covalent event is a conjoint change of protein and substrate conformation which puts the pyranose ring in the 2,5B conformation of the bond-breaking transition state. This model also explains the contrast between the powerful inhibition of the enzyme by deoxynojirimycin (Ki = 23 +/- 3 microM) and feeble inhibition by castanospermine [Saul, Chambers, Molyneux & Elbein (1983) Arch. Biochem. Biophys. 221, 593-597], but is directly contrary to the predictions of Deslongchamps' 'Theory of Stereoelectronic Control' [Deslongchamps (1975) Tetrahedron 31, 2463-2490; (1983) Stereoelectronic Effects in Organic Chemistry, p. 39, Pergamon Press, Oxford]. PMID:3888191

  5. Ultra-Thin-Film GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Wang, K. L.; Shin, B. K.; Yeh, Y. C. M.; Stirn, R. J.

    1982-01-01

    Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

  6. Production of hydroxycitric acid by microorganisms.

    PubMed

    Hida, Hiroyuki; Yamada, Takashi; Yamada, Yasuhiro

    2005-08-01

    Hydroxycitric acid (HCA) is a major acid component of the tropical plants Garcinia cambogia and Hibiscus subdariffa. (2S,3S)-HCA from G. cambogia was shown to be a potent inhibitor of ATP citrate lyase (EC4.1.3.8), which catalyzes the extramitochondrial cleavage of citrate to oxaloacetate and acetyl-CoA. (2S,3R)-HCA from H. subdariffa inhibits alpha-amylase and alpha-glucosidase, leading to reduction of carbohydrate metabolism. The availability of HCA is limited by the restricted habitat of the plants as well as the difficulty of stereoselective organic synthesis. Hence, we screened microorganisms producing HCA to find an alternative source of optically pure bulk HCA. Two strains, Streptomyces sp. U121 and Bacillus megaterium G45C, were screened by HPLC analysis. Particular metabolites were purified from their culture broths and compared with authentic HCA from plants. NMR studies indicated that the products are identical to Hibiscus-type HCA. This is the first report showing isolation of microorganisms producing HCA. PMID:16116285

  7. Guanidinoacetic acid as a performance-enhancing agent.

    PubMed

    Ostojic, Sergej M

    2016-08-01

    Guanidinoacetic acid (GAA; also known as glycocyamine or guanidinoacetate) is the natural precursor of creatine, and under investigation as a novel dietary agent. It was first identified as a natural compound in humans ~80 years ago. In the 1950s, GAA's use as a therapeutic agent was explored, showing that supplemental GAA improved patient-reported outcomes and work capacity in clinical populations. Recently, a few studies have examined the safety and efficacy of GAA and suggest potential ergogenic benefits for physically active men and women. The purpose of this review is to examine possible applications of GAA supplementation for exercise performance enhancement, safety, and legislation issues. PMID:26445773

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  9. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  10. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  11. Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.; Eremenko, M. M.

    2016-08-01

    The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.

  12. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  13. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  14. Surface and coordination chemistry related to GaAs

    NASA Astrophysics Data System (ADS)

    Keys, Andrea

    The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron diffraction and consist of planar three-coordinate monomers. Salient structural parameters (ra) include: Al-C = 2.005(3) A, Ga-C = 2.034(2) A. The geometries are controlled by inter-ligand interactions. The electron diffraction structures are compared to those determined by ab initio calculations for M(tBU)3 (M = Al, Ga, In). To understand the most suitable linkages for the surface of GaAs, model compounds were synthesized by reacting Ga(tBU)3 and [tBu2Ga(mu-Cl]2 with one molar equivalent of varying ligands. The synthesized compounds include chlorides, benzenethiolate, dithiocarbamates, carboxylates, amides, benzohydroxamate, and phenylphosphonate. The Ga ⋯ Ga and Ga-ligand interatomic distances for these compounds, as well as Group 15 and 16 donor bridging ligands, are compared to the values for the surface of GaAs and cubic-GaS in order to determine their suitability as linkage groups for self-assembled monolayers. The most suitable linkages were determined to be benzenethiol and phenylphophonic acid, and these were used to grow self-assembled monolayers on {100} GaAs. Carboxylic acid was also used, to determine the success of the organometallic model compounds in predicting the suitability of ligands for surface reaction. Self-assembled monolayers were also grown on Al2O3, using carboxylic acids and phenylphosphonic acids as the surface linkages. Metallo-organic chemical vapor deposition was performed using single-source precursors ( tBU)2Ga(S2CNR2). The tert -butyl gallium bis-dialkyl-dithiocarbamate compounds, (tBu)Ga(S2CNR2)2, are formed as minor products via ligand disproportionation reactions. Gallium sulfide (GaS) thin films have been grown at 375-425°C by atmospheric pressure metal-organic chemical vapor deposition using compounds (tBu) 2Ga(S2CNMe2) and (tBu)2Ga(S 2CNEt2) as single source precursors. Polycrystalline samples of the chalcogenides InSe, In2Se3

  15. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  16. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  17. GaAs optoelectronic neuron arrays.

    PubMed

    Lin, S; Grot, A; Luo, J; Psaltis, D

    1993-03-10

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10(4) cm(-2) are discussed.

  18. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  19. Advanced physiological roles of guanidinoacetic acid.

    PubMed

    Ostojic, Sergej M

    2015-12-01

    Dietary guanidinoacetic acid (GAA) seems to improve cellular bioenergetics by stimulating creatine biosynthesis. However, GAA could have other biological functions that might affect its possible use as a food ingredient in human nutrition. In this paper, we identified several alternative physiological roles of supplemental GAA, including the stimulation of hormonal release and neuromodulation, an alteration of metabolic utilization of arginine, and an adjustment of oxidant-antioxidant status. A better knowledge of how GAA affects human physiology may facilitate its use as an experimental nutritional intervention for novel purposes and conditions. PMID:26411433

  20. Acoustic Wave Chemical Microsensors in GaAs

    SciTech Connect

    Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason; John L. Reno; Richard Kottenstette; Stephen A. Casalnuovo; Susan L. Hietala; Vincent M. Hietala

    1998-09-20

    High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

  1. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  2. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  3. Eight-Bit-Slice GaAs General Processor Circuit

    NASA Technical Reports Server (NTRS)

    Weissman, John; Gauthier, Robert V.

    1989-01-01

    Novel GaAs 8-bit slice enables quick and efficient implementation of variety of fast GaAs digital systems ranging from central processing units of computers to special-purpose processors for communications and signal-processing applications. With GaAs 8-bit slice, designers quickly configure and test hearts of many digital systems that demand fast complex arithmetic, fast and sufficient register storage, efficient multiplexing and routing of data words, and ease of control.

  4. Development of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mcnally, P. J.

    1972-01-01

    This is the second quarterly technical report on a program, the goal of which is to achieve high efficiency GaAs solar cells. Analysis was concerned with providing design information for use in experimentally determining optimum solar cell process parameters. The first quarterly report contained the results of those design calculations. Using those results as a guide, experimental work was initiated to determine optimum cell process parameters. The initial results on this phase of the program are reported.

  5. Piezoelectric field in strained GaAs.

    SciTech Connect

    Chow, Weng Wah; Wieczorek, Sebastian Maciej

    2005-11-01

    This report describes an investigation of the piezoelectric field in strained bulk GaAs. The bound charge distribution is calculated and suitable electrode configurations are proposed for (1) uniaxial and (2) biaxial strain. The screening of the piezoelectric field is studied for different impurity concentrations and sample lengths. Electric current due to the piezoelectric field is calculated for the cases of (1) fixed strain and (2) strain varying in time at a constant rate.

  6. Chemistry, physiological properties, and microbial production of hydroxycitric acid.

    PubMed

    Yamada, Takashi; Hida, Hiroyuki; Yamada, Yasuhiro

    2007-07-01

    The tropical plants Garcinia cambogia and Hibiscus subdariffa produce hydroxycitric acid (HCA), of which the absolute configurations are (2S,3S) and (2S,3R), respectively. (2S,3S)-HCA is an inhibitor of ATP-citrate lyase, which is involved in fatty acid synthesis. (2S,3R)-HCA inhibits pancreatic alpha-amylase and intestinal alpha-glucosidase, leading to a reduction in carbohydrate metabolism. In this study, we review current knowledge on the structure, biological occurrence, and physiological properties of HCA. The availability of HCA is limited by the restricted habitat of its source plants and the difficulty of stereoselective organic synthesis. Hence, in our recent study, thousands of microbial strains were screened and finally two bacterial strains were, for the first time, found to produce trace amounts of HCA. The HCA variants produced were the Hibiscus-type (2S,3R) enantiomer. Subsequent genome shuffling rapidly generated a mutant population with improved HCA yield relative to the parent strain of bacteria. These bacteria are a potential alternative source of natural HCA. PMID:17476502

  7. Surface-modified GaAs terahertz plasmon emitter

    NASA Astrophysics Data System (ADS)

    Darmo, J.; Strasser, G.; Muller, T.; Bratschitsch, R.; Unterrainer, K.

    2002-07-01

    We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown (LT) GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term performance of the modified emitters is improved by the LT GaAs surface layer.

  8. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  9. High efficiency, low cost thin GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1982-01-01

    The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

  10. Cellular bioenergetics of guanidinoacetic acid: the role of mitochondria.

    PubMed

    Ostojic, Sergej M

    2015-10-01

    Guanidinoacetic acid (GAA) is a natural precursor of creatine, and a possible substrate for the creatine kinase (CK) enzyme system, serving as a creatine mimetic. Its direct role in cellular bioenergetics has been confirmed in several studies, however GAA utilization by CK seems to be a second-rate as compared to creatine, and compartment-dependent. Here we discuss various factors that might affect GAA use in high-energy phosphoryl transfer in the cytosol and mitochondria. PMID:26255041

  11. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

    NASA Astrophysics Data System (ADS)

    Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-10-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  12. Conversion of cassava starch to biomass, carbohydrates, and acids by Aspergillus niger.

    PubMed

    Tan, K H; Ferguson, L B; Carlton, C

    1984-01-01

    The filamentous fungus, Aspergillus niger, efficiently converted cassava polysaccharides to mycelial mass, simple sugars, and acids during the course of its growth. A typical 70-ml culture broth containing 2% cassava polysaccharides yielded 0.38 g dry mycelial mass, 1.14 mmol reducing sugars, and 1.17 meq acids at the end of 42 h. About 70% of the initial total carbohydrate in the medium was degraded during the same period. The sugars and acids in the culture broths were analyzed by HPLC on a single Aminex HPX-87 column at 55 degrees C, using 0.013 N H2SO4 as the eluting solvent. Cassava polysaccharides were degraded to oligosaccharides, maltotriose, maltose, and glucose beyond the 20-h growth periods, with maltotriose emerging as the major simple sugar. The appearance of citric, malic, gluconic, succinic, and fumaric acids accounted mostly for the decreasing pH in the growth media. Formation of carbohydrate species in the culture broths was closely related to the biosynthesis and secretion of several carbohydrases by A. niger. The extracellular carbohydrases were separated and identified by chromatofocusing and polyacrylamide gel electrophoresis to be amyloglucosidase (EC 3.1.2.3), alpha-amylase (EC 3.2.1.1), and alpha-glucosidase (EC 3.2.1.20), respectively.

  13. Panel fabrication utilizing GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  14. The infantile-onset form of Pompe disease: an autopsy diagnosis.

    PubMed

    Dos Santos, Otávio César Cruz; Schultz, Regina

    2015-01-01

    Pompe disease (PD) is a rare, inherited autosomal recessive metabolic disorder caused by the deficiency of the lysosomal acid alpha-glucosidase (GAA) enzyme described in 1932 by the Dutch pathologist Joannes Cassianus Pompe. The prevalence of PD ranges from 1:40,000 to 1:300,000 births and depends on geographic and ethnic factors. Clinical manifestations may vary from a rapidly progressive disabling disease with cardiomegaly, hepatomegaly, weakness, generalized hypotonia, and death within the first year of life, to a mild presentation characterized by slowly progressive myopathy predominantly involving the skeletal muscles. The laboratory diagnostic gold standard is represented by the determination of the alpha-glucosidase activity. However, the muscle histology may also yield the diagnosis by evaluating the tissular glycogen accumulation. Until recently, supportive measures constituted the unique available therapy. Currently, the administration of the recombinant GAA is being used with promising results. The authors present the case of a 5-month-old boy, previously diagnosed with hypertrophic cardiomyopathy since the age of 2 months, who presented acute heart failure accompanied by biventricular dilation followed by refractory shock and death. The autopsy findings confirmed the glycogen-accumulation disease. PMID:26894045

  15. Ion implanted GaAs microwave FET's

    NASA Astrophysics Data System (ADS)

    Gill, S. S.; Blockley, E. G.; Dawsey, J. R.; Foreman, B. J.; Woodward, J.; Ball, G.; Beard, S. J.; Gaskell, J. M.; Allenson, M. B.

    1988-06-01

    The combination of ion implantation and photolithographic patterning techniques was applied to the fabrication of GaAs microwave FETs to provide a large number of devices having consistently predictable dc and high frequency characteristics. To validate the accuracy and repeatability of the high frequency device parameters, an X-band microwave circuit was designed and realized. The performance of this circuit, a buffered amplifier, is very close to the design specification. The availability of a large number of reproducible, well-characterized transistors enabled work to commence on the development of a large signal model for FETs. Work in this area is also described.

  16. Radioiron utilization and gossypol acetic acid in male rats

    SciTech Connect

    Tone, J.N.; Jensen, D.R.

    1985-01-01

    The 24-h incorporation of VZFe into circulating red blood cells, bone marrow, urine, liver, spleen, and skeletal muscle was measured in splenectomized and sham-splenectomized rats which had received a daily, oral dose of gossypol acetic acid (20 mg GAA/kg body wt) for 91 days. A significant decrease in total body weight gain was observed in all GAA treated animals. Splenectomized rats dosed with GAA exhibited a significant decrease in hemoglobin concentration, hematocrit and erythrocyte count. A significant increase in VZFe incorporation by red blood cells and a decrease in hepatic incorporation of VZFe indicate a preferential utilization of iron in erythropoiesis among GAA treated animals.

  17. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  18. Regeneration of a thiolated and antibody functionalized GaAs (001) surface using wet chemical processes.

    PubMed

    Lacour, Vivien; Elie-Caille, Céline; Leblois, Thérèse; Dubowski, Jan J

    2016-03-02

    Wet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This work provides an important view on the perspective of the development of a family of cost-effective GaAs-based biosensors designed for repetitive detection of a variety of biomolecules immobilized with dedicated antibody architectures.

  19. GaAs VLSI for aerospace electronics

    NASA Technical Reports Server (NTRS)

    Larue, G.; Chan, P.

    1990-01-01

    Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

  20. Implantation of carbon in GaAs

    SciTech Connect

    Moll, A.J.

    1992-03-01

    Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

  1. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants.

    PubMed

    Mohiuddin, M; Arbain, D; Islam, A K M Shafiqul; Ahmad, M S; Ahmad, M N

    2016-12-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α-D-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau (Ehretis laevis), Cemumar (Micromelum pubescens), and Kedondong (Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C. PMID:26887579

  2. Flavonoids and its derivatives from Callistephus chinensis flowers and their inhibitory activities against alpha-glucosidase

    PubMed Central

    Zhang, Xiaoshu; Liu, Zhenting; Bi, Xiuli; Liu, Jingxin; Li, Wei; Zhao, Yuqing

    2013-01-01

    Inhibitors of carbohydrate-hydrolysing enzymes play an important role for the treatment of diabetes. One of the therapeutic methods for decreasing of postprandial hyperglycemia is to retard absorption of glucose by the inhibition of carbohydrate- hydrolysing enzymes, such as α-glucosidase, in the digestive organs. To investigate the therapeutic potential of compounds from natural sources, Callistephus chinensis flowers (CCF) were tested for inhibition of α-glucosidase, and acarboes was used as the positive control. The 70 % ethanol extract of CCF exhibited significant α-glucosidase inhibitory activities with IC50 value of 8.14 μg/ml. The stepwise polarity fractions of CCF were tested further for in vitro inhibition of α-glucosidase. The ethyl acetate (EtOAc) fraction exhibited the most significant inhibitory activity. Eight pure compounds, apigenin, apigenin-7-O-β-D- glucoside, kaempferol, hyperin, naringenin, quercetin, luteolin, and kaempferol-7-O-β-D- glucoside, were isolated (using enzyme assay-guide fractionation method) from the EtOAc fraction. Among these, quercetin was the most active one (IC50 values 2.04 μg/ml), and it appears that the inhibiting percentages are close to acarbose (IC50 values 2.24 μg/ml), the positive control, on α-glucosidase inhibition. HPLC/UV analysis indicated that the major components of CCF are kaempferol, hyperin and quercetin. The presented results revealed that CCF containing these eight flavonoids could be a useful natural source in the development of a novel α-glucosidase inhibitory agent against diabetic complications. PMID:27298611

  3. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants.

    PubMed

    Mohiuddin, M; Arbain, D; Islam, A K M Shafiqul; Ahmad, M S; Ahmad, M N

    2016-12-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α-D-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau (Ehretis laevis), Cemumar (Micromelum pubescens), and Kedondong (Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C.

  4. Alpha-Glucosidase Enzyme Biosensor for the Electrochemical Measurement of Antidiabetic Potential of Medicinal Plants

    NASA Astrophysics Data System (ADS)

    Mohiuddin, M.; Arbain, D.; Islam, A. K. M. Shafiqul; Ahmad, M. S.; Ahmad, M. N.

    2016-02-01

    A biosensor for measuring the antidiabetic potential of medicinal plants was developed by covalent immobilization of α-glucosidase (AG) enzyme onto amine-functionalized multi-walled carbon nanotubes (MWCNTs-NH2). The immobilized enzyme was entrapped in freeze-thawed polyvinyl alcohol (PVA) together with p-nitrophenyl-α- d-glucopyranoside (PNPG) on the screen-printed carbon electrode at low pH to prevent the premature reaction between PNPG and AG enzyme. The enzymatic reaction within the biosensor is inhibited by bioactive compounds in the medicinal plant extracts. The capability of medicinal plants to inhibit the AG enzyme on the electrode correlates to the potential of the medicinal plants to inhibit the production of glucose from the carbohydrate in the human body. Thus, the inhibition indicates the antidiabetic potential of the medicinal plants. The performance of the biosensor was evaluated to measure the antidiabetic potential of three medicinal plants such as Tebengau ( Ehretis laevis), Cemumar ( Micromelum pubescens), and Kedondong ( Spondias dulcis) and acarbose (commercial antidiabetic drug) via cyclic voltammetry, amperometry, and spectrophotometry. The cyclic voltammetry (CV) response for the inhibition of the AG enzyme activity by Tebengau plant extracts showed a linear relation in the range from 0.423-8.29 μA, and the inhibition detection limit was 0.253 μA. The biosensor exhibited good sensitivity (0.422 μA/mg Tebengau plant extracts) and rapid response (22 s). The biosensor retains approximately 82.16 % of its initial activity even after 30 days of storage at 4 °C.

  5. Phenolics of pomegranate peels: extraction optimization by central composite design and alpha glucosidase inhibition potentials.

    PubMed

    Çam, Mustafa; İçyer, Necattin Cihat

    2015-03-01

    Optimum water extraction conditions for phenolics of pomegranate peels were investigated by fractional factorial and face-centered central composite designs. Five potential factors were selected for the fractional factorial design: extraction technique, extraction temperature, extraction time, particle size and solvent to solid ratio. After eliminating statistically unimportant factors, a face-centered central composite design was set up with two controllable factors and with two responses: total phenolics and α-glucosidase inhibition activity. Optimum conditions were found as 100 °C for extraction temperature and 1 min for extraction time. There were no statistically significant differences (p > 0.05) between water extracts at optimized conditions and classical methanol extracts. Total phenolic content by HPLC was192.0 mg/g of pomegranate peels on dry matter basis. Phenolics of pomegranate peels showed α-glucosidase inhibition activity with an IC50 (concentration of phenolics required to inhibit 50 % of the enzyme activity) value of 5.56 ± 2.23 μg/ml. Pomegranate peel phenolics with its antioxidant and α-glucosidase inhibition properties might be a suitable ingredient for functional food applications. PMID:25745217

  6. Iminosugars Inhibit Dengue Virus Production via Inhibition of ER Alpha-Glucosidases--Not Glycolipid Processing Enzymes.

    PubMed

    Sayce, Andrew C; Alonzi, Dominic S; Killingbeck, Sarah S; Tyrrell, Beatrice E; Hill, Michelle L; Caputo, Alessandro T; Iwaki, Ren; Kinami, Kyoko; Ide, Daisuke; Kiappes, J L; Beatty, P Robert; Kato, Atsushi; Harris, Eva; Dwek, Raymond A; Miller, Joanna L; Zitzmann, Nicole

    2016-03-01

    It has long been thought that iminosugar antiviral activity is a function of inhibition of endoplasmic reticulum-resident α-glucosidases, and on this basis, many iminosugars have been investigated as therapeutic agents for treatment of infection by a diverse spectrum of viruses, including dengue virus (DENV). However, iminosugars are glycomimetics possessing a nitrogen atom in place of the endocyclic oxygen atom, and the ubiquity of glycans in host metabolism suggests that multiple pathways can be targeted via iminosugar treatment. Successful treatment of patients with glycolipid processing defects using iminosugars highlights the clinical exploitation of iminosugar inhibition of enzymes other than ER α-glucosidases. Evidence correlating antiviral activity with successful inhibition of ER glucosidases together with the exclusion of alternative mechanisms of action of iminosugars in the context of DENV infection is limited. Celgosivir, a bicyclic iminosugar evaluated in phase Ib clinical trials as a therapeutic for the treatment of DENV infection, was confirmed to be antiviral in a lethal mouse model of antibody-enhanced DENV infection. In this study we provide the first evidence of the antiviral activity of celgosivir in primary human macrophages in vitro, in which it inhibits DENV secretion with an EC50 of 5 μM. We further demonstrate that monocyclic glucose-mimicking iminosugars inhibit isolated glycoprotein and glycolipid processing enzymes and that this inhibition also occurs in primary cells treated with these drugs. By comparison to bicyclic glucose-mimicking iminosugars which inhibit glycoprotein processing but do not inhibit glycolipid processing and galactose-mimicking iminosugars which do not inhibit glycoprotein processing but do inhibit glycolipid processing, we demonstrate that inhibition of endoplasmic reticulum-resident α-glucosidases, not glycolipid processing, is responsible for iminosugar antiviral activity against DENV. Our data suggest that inhibition of ER α-glucosidases prevents release of virus and is the primary antiviral mechanism of action of iminosugars against DENV.

  7. Starch source influences dietary glucose generation at the mucosal alpha-glucosidase level

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The quality of starch digestion, related to the rate and extent of release of dietary glucose, is associated with glycemia-related problems such as diabetes and other metabolic syndrome conditions. Here, we found that the rate of glucose generation from starch is unexpectedly associated with mucosal...

  8. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  9. Field dependent emission rates in radiation damaged GaAs

    SciTech Connect

    Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M.

    2014-07-07

    We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

  10. Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

    SciTech Connect

    Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Choi, J. W.; Ji, H.; Kim, G. T.

    2011-12-23

    Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

  11. Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces

    NASA Astrophysics Data System (ADS)

    Sasaki, Masahiro; Yoshida, Seikoh; Yamada, Chikashi

    1993-10-01

    The reactivity of GaAs and GaAs oxide surfaces to trimethylgallium (TMG) was studied by temperature-programmed scattering (TPS) through the energy accommodation coefficient (EAC). The substrate temperature was increased at a constant rate while the scattered TMG was being measured under a constant flux of TMG supplied to the substrate by a cryo-shrouded quadrupole mass spectrometer. Since the detection efficiency of the spectrometer is inversely proportional to the translational velocity of scattered TMG, the observed intensity variation represents the change in translational velocity of reflected TMG during the temperature increase. The variation of the signal intensities was least-squares analyzed to yield the EAC, which is a measure of the surface reactivity. The thus-obtained reactivity of photo-oxidized GaAs to TMG is smaller than that of dark-oxidized GaAs, which is even smaller than that of a bare GaAs surface. This difference in the reactivity is discussed in relation to the mechanism of selective area growth of GaAs using GaAs oxide as a mask.

  12. GaAs VLSI technology and circuit elements for DSP

    NASA Astrophysics Data System (ADS)

    Mikkelson, James M.

    1990-10-01

    Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

  13. Genome shuffling of Streptomyces sp. U121 for improved production of hydroxycitric acid.

    PubMed

    Hida, Hiroyuki; Yamada, Takashi; Yamada, Yasuhiro

    2007-01-01

    (2S, 3R)-Hydroxycitric acid (HCA) from Hibiscus subdariffa inhibits pancreatic alpha-amylase and intestine alpha-glucosidase, leading to reduction of carbohydrate metabolism. In our previous study, Streptomyces sp. U121 was identified as a producer of (2S, 3R)-HCA [Hida et al. (2005) Bioscience, Biotechnology, and Biochemistry 69:1555-1561]. Here, we applied genome shuffling of Streptomyces sp. U121 to achieve rapid improvement of HCA production. The initial mutant population was generated by nitrosoguanidine treatment of the spores, and an improved population producing fivefold more HCA over wild type was obtained by three rounds of genome shuffling. For efficient screening of the mutant library, trans-epoxyaconitic acid (EAA), an antibiotic analog of HCA, was utilized. EAA inhibited the regeneration of nonfused protoplasts, resulting in selective screening of shuffled strains. Mutant strains with enhanced EAA resistance exhibited significantly higher HCA production in liquid media. Furthermore, the best mutant showed increased cell growth in flask culture, as well as increased HCA production. PMID:17043823

  14. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  15. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  16. Interfacial Ga-As suboxide: Structural and electronic properties

    SciTech Connect

    Colleoni, Davide Pasquarello, Alfredo

    2015-07-20

    The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under consideration. The absence of As–O bonds indicates that the structure is a mixture of GaAs and Ga-oxide, in accordance with photoemission experiments. The band edges of the models are found to be closely aligned to those of GaAs. The simulation of charging and discharging processes leads to the identification of an As-related defect with an energy level at ∼0.7 eV above the GaAs valence band maximum, in good agreement with the experimental density of interface states.

  17. Crystal Growth of Device Quality Gaas in Space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.

    1985-01-01

    The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

  18. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  19. Characteristics of GaAs with inverted thermal conversion

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

  20. Ultrafast spectroscopy of GaAs under magnetic field

    SciTech Connect

    Mycek, M.A.; Siegner, U.; Glutsch, S.

    1995-03-01

    Surprising and novel results are obtained for both the linear and the nonlinear optical response of GaAs under magnetic field. Using a variety of spectroscopic techniques, we measure field dependent effects due to Coulomb correlation.

  1. GaAs solar cells for space applications

    NASA Technical Reports Server (NTRS)

    Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

    1980-01-01

    GaAs solar cells offer substantial advantages for space photovoltaic power over Si solar cells in the areas of efficiency, elevated temperature operation, and radiation damage stability. A mission cost comparison is made for GaAs and Si solar cells. For Si cell arrays, the total mission cost is found to be a minimum for a solar concentration of 2.9. For GaAs, modes of operation and construction are investigated. Modes having lower mission costs than the minimum Si mission cost are defined. These include higher concentrations, lightweight cells, and simultaneous power generation and annealing. The technological progress necessary for GaAs to operate in these modes is identified.

  2. Interfacial Ga-As suboxide: Structural and electronic properties

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Pasquarello, Alfredo

    2015-07-01

    The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under consideration. The absence of As-O bonds indicates that the structure is a mixture of GaAs and Ga-oxide, in accordance with photoemission experiments. The band edges of the models are found to be closely aligned to those of GaAs. The simulation of charging and discharging processes leads to the identification of an As-related defect with an energy level at ˜0.7 eV above the GaAs valence band maximum, in good agreement with the experimental density of interface states.

  3. GaAs Hall devices produced by local ion implantation

    NASA Astrophysics Data System (ADS)

    Pettenpaul, E.; Huber, J.; Weidlich, H.; Flossmann, W.; von Borcke, U.

    1981-08-01

    GaAs Hall devices were produced by complete planar technology using two selective silicon ion implantation steps. The fundamental characteristics of these devices with respect to reproducible implantation dose and geometry of cross-shaped elements are obtained both by experiment and calculation. The prominent properties of the GaAs Hall elements presented are high sensitivity and linearity, small temperature dependence of sensitivity and resistance, and low residual voltage.

  4. Novel GAA mutations in patients with Pompe disease.

    PubMed

    Turaça, Lauro Thiago; de Faria, Douglas Oliveira Soares; Kyosen, Sandra Obikawa; Teixeira, Valber Dias; Motta, Fabiana Louise; Pessoa, Juliana Gilbert; Rodrigues E Silva, Marina; de Almeida, Sandro Soares; D'Almeida, Vânia; Munoz Rojas, Maria Verônica; Martins, Ana Maria; Pesquero, João Bosco

    2015-04-25

    Pompe disease is an autosomal recessive disorder linked to GAA gene that leads to a multi-system intralysosomal accumulation of glycogen. Mutation identification in the GAA gene can be very important for early diagnosis, correlation between genotype-phenotype and therapeutic intervention. For this purpose, peripheral blood from 57 individuals susceptible to Pompe disease was collected and all exons of GAA gene were amplified; the sequences and the mutations were analyzed in silico to predict possible impact on the structure and function of the human protein. In this study, 46 individuals presented 33 alterations in the GAA gene sequence, among which five (c.547-67C>G, c.547-39T>G, p.R437H, p.L641V and p.L705P) have not been previously described in the literature. The alterations in the coding region included 15 missense mutations, three nonsense mutations and one deletion. One insertion and other 13 single base changes were found in the non-coding region. The mutation p.G611D was found in homozygosis in a one-year-old child, who presented low levels of GAA activity, hypotonia and hypertrophic cardiomyopathy. Two patients presented the new mutation p.L705P in association with c.-32-13T>G. They had low levels of GAA activity and developed late onset Pompe disease. In our study, we observed alterations in the GAA gene originating from Asians, African-Americans and Caucasians, highlighting the high heterogeneity of the Brazilian population. Considering that Pompe disease studies are not very common in Brazil, this study will help to better understand the potential pathogenic role of each change in the GAA gene. Furthermore, a precise and early molecular analysis improves genetic counseling besides allowing for a more efficient treatment in potential candidates.

  5. Characterisation of semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

    1982-01-01

    Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

  6. [Adult form of Pompe disease].

    PubMed

    Ziółkowska-Graca, Bozena; Kania, Aleksander; Zwolińska, Grazyna; Nizankowska-Mogilnicka, Ewa

    2008-01-01

    Pompe disease (glycogen-storage disease type II) is an autosomal recessive disorder caused by a deficiency of lysosomal acid alpha-glucosidase (GAA), leading to the accumulation of glycogen in the lysosomes primarily in muscle cells. In the adult form of the disease, proximal muscle weakness is noted and muscle volume is decreased. The infantile form is usually fatal. In the adult form of the disease the prognosis is relatively good. Muscle weakness may, however, interfere with normal daily activities, and respiratory insufficiency may be associated with obstructive sleep apnea. Death usually results from respiratory failure. Effective specific treatment is not available. Enzyme replacement therapy with recombinant human GAA (rh-GAA) still remains a research area. We report the case of a 24-year-old student admitted to the Department of Pulmonary Diseases because of severe respiratory insufficiency. Clinical symptoms such as dyspnea, muscular weakness and increased daytime sleepiness had been progressing for 2 years. Clinical examination and increased blood levels of CK suggested muscle pathology. Histopathological analysis of muscle biopsy, performed under electron microscope, confirmed the presence of vacuoles containing glycogen. Specific enzymatic activity of alpha-glucosidase was analyzed confirming Pompe disease. The only effective method to treat respiratory insufficiency was bi-level positive pressure ventilation. Respiratory rehabilitation was instituted and is still continued by the patient at home. A high-protein, low-sugar diet was proposed for the patient. Because of poliglobulia low molecular weight heparin was prescribed. The patient is eligible for experimental replacement therapy with rh-GAA. PMID:19003770

  7. Single-dose oral guanidinoacetic acid exhibits dose-dependent pharmacokinetics in healthy volunteers.

    PubMed

    Ostojic, Sergej M; Vojvodic-Ostojic, Aleksandra

    2015-03-01

    Guanidinoacetic acid (GAA), the natural precursor of creatine, has potential as a dietary supplement for human nutrition, yet no data are available regarding its dose-dependent pharmacokinetic (PK) behavior. We hypothesized that a single dose of orally administered GAA exhibited dose-dependent PK behavior in healthy volunteers. Forty-eight young adults were enrolled in a randomized, placebo-controlled, double-blind, parallel-group trial to receive single oral doses of GAA (1.2, 2.4, and 4.8 g) or a placebo. Pharmacokinetic metrics for plasma GAA and creatine were assessed immediately before (0 hours) and at 1, 2, 4, 6, 8, 12, and 24 hours after GAA ingestion. The lag time appeared to be similar after the bolus ingestion of GAA (0.14 ± 0.17 hours for low-dose GAA, 0.31 ± 0.18 hours for medium-dose GAA, and 0.38 ± 0.32 hours for high-dose GAA; P = .05). An increase in the area under the concentration-time curve for plasma GAA was found for the dose range tested, with 2.4- and 9.3-fold increases in the area under the concentration-time curve for every 2-fold increase in the GAA dose (P < .0001). No differences were found for elimination half-time between the low-dose and medium-dose groups (<1.75 hours), whereas the elimination half-time was significantly longer (>2.1 hours) for the high-dose GAA regimen (P = .001). The volume of distribution was affected by the dosage of GAA applied (102.6 ± 17.3 L for low-dose GAA, 97.5 ± 15.7 L for medium-dose GAA, and 61.1 ± 12.7 L for high-dose GAA; P < .0001). Ingestion of GAA elevated plasma creatine by 80%, 116%, and 293% compared with the placebo for the 1.2, 2.4, and 4.8 g doses, respectively (P < .0001). Guanidinoacetic acid single-dose PK metrics were nonlinear with respect to dose size. Across the dose range of 1.2 to 4.8 g, systemic exposure to GAA increased in a greater than dose-proportional manner. PMID:25622538

  8. Spectroscopy of GaAs quantum wells

    SciTech Connect

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  9. Terahertz pulse detection by the GaAs Schottky diodes

    NASA Astrophysics Data System (ADS)

    Laperashvili, Tina; Kvitsiani, Orest; Imerlishvili, Ilia; Laperashvili, David

    2010-06-01

    We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time constant and thermal noise. In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor (MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was carried out at room temperature.

  10. Nondestructive tribochemistry-assisted nanofabrication on GaAs surface

    PubMed Central

    Song, Chenfei; Li, Xiaoying; Dong, Hanshan; Yu, Bingjun; Wang, Zhiming; Qian, Linmao

    2015-01-01

    A tribochemistry-assisted method has been developed for nondestructive surface nanofabrication on GaAs. Without any applied electric field and post etching, hollow nanostructures can be directly fabricated on GaAs surfaces by sliding a SiO2 microsphere under an ultralow contact pressure in humid air. TEM observation on the cross-section of the fabricated area shows that there is no appreciable plastic deformation under a 4 nm groove, confirming that GaAs can be removed without destruction. Further analysis suggests that the fabrication relies on the tribochemistry with the participation of vapor in humid air. It is proposed that the formation and breakage of GaAs-O-Si bonding bridges are responsible for the removal of GaAs material during the sliding process. As a nondestructive and conductivity-independent method, it will open up new opportunities to fabricate defect-free and well-ordered nucleation positions for quantum dots on GaAs surfaces. PMID:25761910

  11. Characterization of production GaAs solar cells for space

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1988-01-01

    The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.

  12. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  13. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1-90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  14. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  15. GaAs detectors irradiated by low doses of electrons

    NASA Astrophysics Data System (ADS)

    Šagátová, A.; Zat'ko, B.; Pavlovič, M.; Sedlačková, K.; Hybler, P.; Dubecký, F.; Nečas, V.

    2014-04-01

    Semi-insulating (SI) GaAs detectors were irradiated by 5 MeV electrons up to a dose of 69 kGy, in order to test their radiation hardness. The electric and spectrometric stability of detectors was examined as a function of the absorbed dose. Investigated detectors showed a very good detector radiation resistance within a dose up to 40 kGy followed by deterioration of some spectrometric and electric properties. However, the reverse current and the detector charge collection efficiency showed minimum changes with the overall applied doses. The obtained results will be used as a preliminary study for further radiation-hardness investigations of GaAs detectors against high energy electrons. This will complete our previous studies of GaAs detector radiation hardness against fast neutrons and γ-rays.

  16. Growth of silver nanowires on GaAs wafers.

    PubMed

    Sun, Yugang

    2011-05-01

    Silver (Ag) nanowires with chemically clean surfaces have been directly grown on semi-insulating gallium arsenide (GaAs) wafers through a simple solution/solid interfacial reaction (SSIR) between the GaAs wafers themselves and aqueous solutions of silver nitrate (AgNO(3)) at room temperature. The success in synthesis of Ag nanowires mainly benefits from the low concentration of surface electrons in the semi-insulating GaAs wafers that can lead to the formation of a low-density of nuclei that facilitate their anisotropic growth into nanowires. The resulting Ag nanowires exhibit rough surfaces and reasonably good electric conductivity. These characteristics are beneficial to sensing applications based on single-nanowire surface-enhanced Raman scattering (SERS) and possible surface-adsorption-induced conductivity variation.

  17. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Zwerdling, S.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

  18. Oxygen in GaAs - Direct and indirect effects

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

    1984-01-01

    Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

  19. Interface demarcation in GaAs by current pulsing

    NASA Technical Reports Server (NTRS)

    Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

    1990-01-01

    GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

  20. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  1. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  2. MBE Growth of GaAs Whiskers on Si Nanowires

    SciTech Connect

    Maxwell Andrews, Aaron

    2010-01-04

    We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

  3. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H.; Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V.; Katzenstein, A. L.; Sofferman, D. L.; Goldman, R. S.

    2013-09-02

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  4. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  5. ICP etching of GaAs via hole contacts

    SciTech Connect

    Shul, R.J.; Baca, A.G.; Briggs, R.D.; McClellan, G.B.; Pearton, S.J.; Constantine, C.

    1996-09-01

    Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 {mu}m/min with via profiles ranging from highly anistropic to conical.

  6. Defect interactions in GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

  7. Nuclear spin warm up in bulk n -GaAs

    NASA Astrophysics Data System (ADS)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

    2016-08-01

    We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

  8. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  9. Crystal growth of GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Pawlowicz, L. M.; Dabkowski, F.; Li, C. J.

    1984-01-01

    It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

  10. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  11. Epitaxial EuO thin films on GaAs

    SciTech Connect

    Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K.; Mack, S.; Awschalom, D. D.

    2010-09-13

    We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

  12. High gain single GaAs nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Wang, Hao

    2013-08-01

    An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.

  13. Surface structure of GaAs with adsorbed Te

    NASA Astrophysics Data System (ADS)

    Feldman, R. D.; Austin, R. F.

    1986-10-01

    The surface structures that result from the adsorption of Te on (100) GaAs have been shown to affect the orientation of CdTe films on GaAs. Two structures are described here. A low-temperature (6×1) surface leads to (100) film growth. At 580 °C, a new surface results which is characterized by ordering along directions 60° from [011¯] and [01¯1], and leads to (111) growth of CdTe. Both surface structure and the interaction of the group II element with the surface are believed to be important in determining the orientation of the film.

  14. Raman scattering study of (GaAs)1-x(Si2)x alloys epitaxially grown on GaAs

    NASA Astrophysics Data System (ADS)

    Rodríguez, A. G.; Navarro-Contreras, H.; Vidal, M. A.

    2001-11-01

    (GaAs)1-x(Si2)x metastable alloys grown on (001), (110), (112), and (111) GaAs substrates, with Si fractions in the range 0⩽x⩽0.43, were studied by Raman scattering. Two modes near the LO and TO modes of GaAs, besides two local modes associated either with Si-As or Si-Ga and Si-Si bonds, are observed in the Raman spectra. The ratio of integrated intensities of TO-like and LO-like modes (ITO/ILO) is used to evaluate the short range order. It is observed that the zinc blende to diamond transition reported in the literature for these alloys does not influence the Si fraction dependence of the short range order.

  15. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  16. Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

    NASA Astrophysics Data System (ADS)

    Jacobi, K.; Geelhaar, L.; Márquez, J.

    We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

  17. GaAs on Si as a substrate for microwave and millimeter-wave monolithic integration

    NASA Astrophysics Data System (ADS)

    Aksun, M. I.; Morkoc, H.

    1988-01-01

    The effective dielectric constant, characteristic impedance, and dielectric loss of a shielded microstrip line manufactured on namely GaAs, Si, and GaAs/Si are calculated. Dielectric loss versus frequency for the GaAs and Si substrates are shown. The same parameters for GaAs/Si substrate were plotted for two different resistivities of the GaAs overlay material, and for each of three different GaAs overlayer thicknesses. The measurements covered the 10-100-GHz frequency range. Depending on the thickness, results show that high-resistivity GaAs epitaxial layers on Si substrates having moderate resistivities reduce the dielectric loss.

  18. Microscopic determination of stress distribution in GaAs grown at low temperature on GaAs (100)

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; Tanaka, M.; Ishikawa, A.; Teriauchi, M.

    1991-01-01

    A microscopic strain distribution across commensurate interfaces between GaAs layers grown on semi-insulating GaAs substrates was observed by means of convergent beam electron diffraction (CBED) and large angle convergent beam methods (LACBED). Strain relaxation at a specific distance from the interface was observed in these layers without formation of misfit dislocations. It was proposed that specific point defects distributed close to the interface can explain the asymmetric broadening of high-order Laue zone (HOLZ) lines in the CBED patterns.

  19. Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

    PubMed

    Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt

    2010-05-14

    We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

  20. Optical and electrical characterization of surface passivated GaAs nanostructures

    NASA Astrophysics Data System (ADS)

    Arab, Shermin; Chi, Chun Yung; Yao, Maoqing; Chang, Chia-Chi; Dapkus, P. Daniel; Cronin, Stephen B.

    2014-02-01

    GaAs nanostructures are used in different optoelectronic applications including solar cells, LEDs and fast electronics. Although GaAs shows outstanding optical properties, it suffers from surface states and consequently high surface recombination velocity. The surface depletion effects lead to semi-insulating behaviors in GaAs devices. Passivation of GaAs nanostructures (AlGaAs or ionic liquid) lead to surface stability and improvement in optoelectronic properties. We provide a systematic study to compare the optical and electrical improvement after passivation (AlGaAs or ionic liquid) of GaAs nanostructure including nanowires and nanosheets. Both room temperature and low temperature photoluminescent (PL) spectra indicate increase in optical activity of GaAs nanostructures after passivation. Electron beam induced current (EBIC) measurements reveal the diffusion length of carries in different GaAs nanostructures.

  1. Present status of GaAs. [including space processing and solid state applications

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Jastrzebski, L.

    1979-01-01

    An extensive literature survey on GaAs was carried out for the period December 31, 1970, to December 31, 1977. The increasing interest in GaAs device structures increased steadily during that period. The leading research and development centers and the specific areas of interest were identified. A workshop on GaAs was held in November 1977 to assess the present status of melt-grown GaAs and the existing needs for reliable chemical, structural, and electronic characterization methods. It was concluded that the present available bulk GaAs crystals are of poor quality and that GaAs technology is lagging demonstrated or potentially feasible GaAs devices and systems.

  2. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  3. Advances in GaAs bistable optical devices

    NASA Astrophysics Data System (ADS)

    Jewell, J. L.; Tarng, S. S.; Gibbs, H. M.; Tai, K.; Weinberger, D. A.; Gossard, A. C.; McCall, S. L.; Passner, A.; Venkatesan, T. N. C.; Weigmann, W.

    1984-01-01

    Bistable optical devices (BOD's) using GaAs as the nonlinear medium are viable candidators for the achievement of fast ( ns), room temperature, low-power (mw), externally controllable optical switches which are easily fabricated and operated. Advances were made in all of these areas and efforts are in progress to improve performances in ways that are simultaneously compatible.

  4. The 20 GHz power GaAs FET development

    NASA Technical Reports Server (NTRS)

    Crandell, M.

    1986-01-01

    The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.

  5. ZnSe Films in GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Kachare, Ram H.

    1987-01-01

    ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.

  6. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  7. High purity, low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1983-01-01

    Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

  8. Measuring Carrier Lifetime in GaAs by Luminescence

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1986-01-01

    Luminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.

  9. LPE growth of GaAs1-xSbx

    NASA Astrophysics Data System (ADS)

    Lendvay, E.; Görög, T.; Tóth, A. L.

    1981-06-01

    Single and multilayer ternary GaAs1±xSb x and quaternary AlyGa 1±yAs 1±xSb x systems were grown by LPE onto (100)GaAs substrates, investigating the As-rich side of the phase diagram. The composition of solid phase was investigated by microprobe analysis. Two major observations have been made; (a) GaAs1± xSb x epitaxial layers grown by the usual LPE techniques in the solid composition range of x ≤ 0.1 and above 750°C show mirror like surfaces and practically homogeneous composition. (b) GaAs1±xSb x layers produced by LPE, cooling the system down below this temperature show the presence at least two regions; one rich in As, the other in Sb. Owing to the dislocation network originating as a consequence of the misfit, the surfaces of these layers consists of <110> aligned ridges and elements with cubic symmetry. The formation of Sb-rich (generally GaSb) layer is independent of the melt composition. Its presence was proved by microprobe analysis as well as by optical measurements. Similar observations were made on AlyGa 1± yAs 1± xSb x layers. For the quaternary the critical temperature, in agreement with previously published value, was found to be 715°C. Undoped GaAs1±xSb x layers showed p-type conduction with ϱ 10 -2 Ω cm, p = 5× 10 17-2×10 18 cm -3 and room temperature hole mobility of 260-280 cm 2 V -1 s -1.

  10. alloy lattice-matched to GaAs: a first-principles study

    NASA Astrophysics Data System (ADS)

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-10-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1- x- y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1- x- y N x Bi y alloy with y/ x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1- x- y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1- x- y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1- x- y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1- x- y N x Bi y quaternary alloys in optoelectronic devices.

  11. Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

    NASA Technical Reports Server (NTRS)

    Larsen, C. A.; Buchan, N. I.; Stringfellow, G. B.

    1988-01-01

    The decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric-pressure flow system with the use of D2 to label the reaction products which are analyzed in a time-of-flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas-phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid-base adduct that forms and subsequently eliminates CH4.

  12. Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

    NASA Technical Reports Server (NTRS)

    Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

    1988-01-01

    GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

  13. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  14. Oxygen-enhanced wet thermal oxidation of GaAs

    NASA Astrophysics Data System (ADS)

    Bauters, J. F.; Fenlon, R. E.; Seibert, C. S.; Yuan, W.; Plunkett, J. S. B.; Li, J.; Hall, D. C.

    2011-10-01

    An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 °C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O2 added relative to the N2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of ˜2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact.

  15. Thick sodium overlayers on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Heinemann, Martina; Scheffler, Matthias

    1994-02-01

    We report density-functional theory calculations of the electronic structure, total energy, and forces for the Na adsorption on GaAs(110) using the local-density approximation of the exchange-correlation functional and ab initio pseudopotentials. Results are presented for coverages ranging from one adatom per substrate surface cell up to the thick overlayer limit. The atomic and electronic structure of the substrate is locally changed by the sodium adsorption on GaAs(110), depending on the coverage. In particular, we analyze the wave-function character of the states at the Fermi level, how it changes with sodium coverage, and we identify the formation of metal induced gap states (MIGS) at the interface. These MIGS are found to have mostly Ga dangling-bond character for all coverages. The calculated values of the p-type Schottky barrier and of the variation of photothreshold as a function of coverage are in good agreement with experimental data.

  16. Time domain optical susceptibility of intrinsic GaAs

    NASA Astrophysics Data System (ADS)

    Thomas, M. E.; Miragliotta, J. A.; Joseph, R. I.

    2002-06-01

    Intrinsic GaAs optical constant values are well known as functions of frequency (10 000-65 000 cm-1 or 1.24-8.06 eV) and temperature (22-754 K). Room-temperature far-infrared optical constant data also exist as a function of frequency, and are representable by a classical oscillator model. In this article, the frequency-domain, temperature-dependent intrinsic dielectric function of GaAs has been Fourier transformed to obtain an analytical, closed-form representation of the time-domain susceptibility. Results from these expressions are consistent with the temporal characteristics of electronic transitions impeded by elastic scattering, which are in the femtosecond regime. The closed form nature of these expressions makes them well suited for finite difference time domain simulations of waveguides, optoelectronic devices, and microwave devices.

  17. Cryogenic measurements of aerojet GaAs n-JFETs

    NASA Technical Reports Server (NTRS)

    Goebel, John H.; Weber, Theodore T.

    1993-01-01

    The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K.

  18. Testing a GaAs cathode in SRF gun

    SciTech Connect

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  19. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1986-01-01

    It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

  20. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1989-01-01

    The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

  1. Single Material Band Gap Engineering in GaAs Nanowires

    SciTech Connect

    Spirkoska, D.; Abstreiter, G.; Efros, A.; Conesa-Boj, S.; Morante, J. R.; Arbiol, J.; Fontcuberta i Morral, A.

    2011-12-23

    The structural and optical properties of GaAs nanowire with mixed zinc-blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc-blende or wurtzite crystal phases. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV. The downward shift of the emission peaks can be understood by carrier confinement at the wurtzite/zinc-blende heterojunction, in quantum wells and in random short period superlattices existent in these nanowires, assuming the theoretical staggered band-offset between wurtzite and zinc-blende GaAs.

  2. GaAs solar cells for laser power beaming

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Huber, Daniel A.; Addis, F. William; Anheier, Norman; Coomes, E. P.

    1991-01-01

    Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. This work was motivated primarily by interests in space-tp-space power beaming applications. In particular, the Battelle Pacific Northwest Laboratories is conducting studies of the utilization of power beaming for several future space missions. Modeling calculations of GaAs cell performance were carried out using PC-1D to determine an appropriate design for a p/n cell structure. Epitaxial wafers were grown by MOCVD and cells fabricated at WSU Tri-Cities. Under simulated conditions, an efficiency of 53 percent was achieved for a cell coupled to 806 nm light at 400 mW/sq cm.

  3. Experimental examination of gaas dissolution in in-p melt

    NASA Astrophysics Data System (ADS)

    Bolkhovityanov, Yu. B.; Bolkhovityanova, R. I.; Chikichev, S. I.

    1983-05-01

    The “solubility” of GaAs crystals in quaternary In-Ga-As-P liquids (X{Ga/I} = X{As/I}) has been studied experi-mentally at 770°C using seed-dissolution technique. The location of the true liquidus isotherm has been established independently by means of the direct vi-sual observation technique. Comparison between the two data sets indicates that the first method can be successfully used only for those In-Ga-As-P melt compositions which have the corresponding solid InxGa1-xAsyP1-y alloys nearly lattice-matched to the GaAs substrate. In other cases the results obtained by this method are totally misleading although in-teresting as they are. The phenomenon of “catastro-phic” substrate erosion is investigated. The results of the present study are interpreted within the conceptual framework developed previously.

  4. Formation and properties of porous GaAs

    SciTech Connect

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  5. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Lagowski, J.

    1981-01-01

    Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

  6. The GaAs solar cell research and development programs of the Air Force

    NASA Technical Reports Server (NTRS)

    Masloski, K. T.

    1980-01-01

    The compound GaAs is of interest for space application photovoltaics due to its inherent advantages over silicon. Higher efficiencies, superior radiation hardness, and a greater temperature resistance are the major advantages of GaAs over Si. Air Force programs look for ways of maximizing these advantages while minimizing disadvantages such as higher costs and weights. Four programs in GaAs photovoltaics are described and each program is discussed in terms of its objective, approach and status.

  7. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  8. Solar heating of GaAs nanowire solar cells.

    PubMed

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K. PMID:26698787

  9. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  10. Gallium arsenide (GaAs) solar cell modeling studies

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.

    1980-01-01

    Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

  11. On the dissolution properties of GaAs in Ga

    NASA Technical Reports Server (NTRS)

    Davidson, M. C.; Moynahan, A. H.

    1977-01-01

    The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

  12. Incommensurate phase of Te adsorbed on (001) GaAs

    NASA Astrophysics Data System (ADS)

    Cibert, J.; Saminadayar, K.; Tatarenko, S.; Gobil, Y.

    1989-06-01

    Occurrence of commensurate and incommensurate phases is reported for adsorption of Te on Ga-rich (001) GaAs surfaces. The Te coverage is measured directly through x-ray photoelectron spectroscopy, and the incommensurate phase is studied in detail as a function of Te coverage; two regimes are demonstrated, one at low coverage where Te is mainly bound to Ga, and another one at high coverage where Te mainly bound to As is also present.

  13. A high-speed GaAs MESFET optical controller

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.; Richard, M.; Bendett, M.; Gustafson, G.

    1989-01-01

    Optical interconnects are being considered for control signal distribution in phased array antennas. A packaged hybrid GaAs optical controller with a 1:16 demultiplexed output that is suitable for this application is described. The controller, which was fabricated using enhancement/depletion mode MESFET technology, operates at demultiplexer-limited input data rates up to 305 Mb/s and requires less than 200 microW optical input power.

  14. Ab initio study of hot electrons in GaAs.

    PubMed

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B; Louie, Steven G

    2015-04-28

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron-phonon relaxation times at the onset of the Γ, L, and X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron-phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron-phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials.

  15. Sb-Stabilized GaAs(100) Surfaces

    NASA Astrophysics Data System (ADS)

    Shanabrook, B. V.; Whitman, L. J.; Bennett, B. R.

    1997-03-01

    Recently, there has been considerable speculation about the structure of Sb-terminated GaAs(100) surfaces.(Esser et al., Phys. Rev. Lett. 77, 4402 (1996)) (Moriarty et al., Phys. Rev. B53, R16148 (1996)) In addition to the previously studied (2x4) reconstruction, we also investigate the more Sb-rich (2x8) reconstruction with in situ RHEED and STM. The (2x8) Sb-terminated surface was prepared by exposing a well-ordered MBE-grown As-terminated (2x4) GaAs (100) surface to Sb. The Sb-terminated (2x4) reconstruction can be formed by heating the (2x8) reconstruction in the absence of Sb flux. The STM images of the (2x8) reconstruction exhibit a complex multilayer structure with a significant dependence on bias. In contrast, the (2x4) reconstruction appears somewhat simpler and suggests that the two As-dimers on the GaAs surface have been replaced by either 1 or 2 Sb dimers. Possible models for each of these novel reconstructions will be presented.

  16. Improved performance of GaAs radiation detectors

    SciTech Connect

    Nava, F.; Vanni, P.; Bertuccio, G.

    1996-12-31

    Gallium arsenide (GaAs) offers an attractive choice for room temperature X- and {gamma}-ray detectors. However performance of SI LEC bulk GaAs detectors is at present limited by the short carrier lifetime and by the diode breakdown occurring as soon as the electric field reaches the back ohmic contact. We have shown that ohmic contacts based on ion implantation allowed us to go far beyond the bias voltage necessary to achieve a fully active detector. However the conventional thermal treatments (850 {degrees}C, 30 s) required to anneal the damage induced by ion implantation strongly reduces the electron lifetime in the detector. Alenia has developed two improved processes (RA and RB) which avoid high temperature annealing and the consequent electron lifetime reduction. With the new detectors, in pixel (200x200 {mu}m{sup 2}) configuration, a charge collection efficiency (cce) of 90 % for 59.5 keV X-rays and a FWHM of 3.35 keV has been achieved at room temperature. These features, thickness, applied voltage, cce and FWRM are suitable for application of GaAs pixel detectors in medical imaging. Results obtained with of particles and X-rays at different temperatures and in a wide range of applied bias in detectors made with standard, implantated and improved processes are presented, compared and discussed.

  17. Preparation and characterization of pulse electrodeposited GaAs films

    NASA Astrophysics Data System (ADS)

    Murali, K. R.; Trivedi, D. C.

    2006-04-01

    GaAs is a III-V compound possessing high mobility and a direct band gap of 1.43 eV, making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared by plating an aqueous solution containing GaCl3 and As2O3 at a pH of 2 and at room temperature. The current density was kept at 50 mA cm-2 and the duty cycle was varied in the range 10-50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single-phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. Atomic force microscope measurements indicated uniform coverage with large crystallites for the films deposited at higher duty cycles. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1 M polysulphide electrolyte. At 60 mW cm-2 illumination, an open-circuit voltage of 0.5 V and a short-circuit current density of 5.0 mA cm-2 were observed for the films deposited at a duty cycle of 50%.

  18. Ab initio study of hot electrons in GaAs

    PubMed Central

    Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

    2015-01-01

    Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron–phonon relaxation times at the onset of the Γ, L, and X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron–phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron–phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials. PMID:25870287

  19. GAA triplet-repeats cause nucleosome depletion in the human genome.

    PubMed

    Zhao, Hongyu; Xing, Yongqiang; Liu, Guoqing; Chen, Ping; Zhao, Xiujuan; Li, Guohong; Cai, Lu

    2015-08-01

    Although there have been many investigations into how trinucleotide repeats affect nucleosome formation and local chromatin structure, the nucleosome positioning of GAA triplet-repeats in the human genome has remained elusive. In this work, the nucleosome occupancy around GAA triplet-repeats across the human genome was computed statistically. The results showed a nucleosome-depleted region in the vicinity of GAA triplet-repeats in activated and resting CD4(+) T cells. Furthermore, the A-tract was frequently adjacent to the upstream region of GAA triplet-repeats and could enhance the depletion surrounding GAA triplet-repeats. In vitro chromatin reconstitution assays with GAA-containing plasmids also demonstrated that the inserted GAA triplet-repeats destabilized the ability of recombinant plasmids to assemble nucleosomes. Our results suggested that GAA triplet-repeats have lower affinity to histones and can change local nucleosome positioning. These findings may be helpful for understanding the mechanism of Friedreich's ataxia, which is associated with GAA triplet-repeats at the chromatin level.

  20. Recovery of gallium and arsenic from GaAs wafer manufacturing slurries

    SciTech Connect

    Jadvar, R.; McCoy, B.J. ); Ford, B.; Galt, J. )

    1991-11-01

    Lapping and polishing slurries from the gallium arsenide (GaAs) wafer manufacturing process were used to develop simple and inexpensive methods for separation and recovery of valuable gallium and toxic arsenic. The lapping slurry, containing GaAs, glycerol, alumina, iron oxide, and water, is treated by a process involving water addition, dissolution of GaAs, mixing, sedimentation, decantation, and evaporation. The polishing slurry, containing GaAs, silica, sodium bicarbonate, sodium hypochlorite and water, is treated simply by a repetitive cycle of adding water, mixing, settling, decanting, and evaporating. After treatment, the slurries contain less than 5 ppm of dissolved arsenic and are considered non-hazardous.

  1. GaAs thin films and methods of making and using the same

    DOEpatents

    Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

    2016-06-14

    Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

  2. Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

    1986-01-01

    A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

  3. High Quality of Liquid Phase-Deposited SiON on GaAs MOS Capacitor with Multiple Treatments

    NASA Astrophysics Data System (ADS)

    Lee, Ming-Kwei; Yen, Chih-Feng; Yeh, Min-Yen

    2016-08-01

    Silicon oxynitride (SiON) film on a p-type (100) GaAs substrate by liquid phase deposition has been characterized. Aqueous solutions of hydrofluosilicic acid, ammonia and boric acid were used as growth precursors. The electrical characteristics of SiON film are much improved on GaAs with (NH4)2S treatment. With post-metallization annealing (PMA), hydrogen ions further passivate traps in the SiON/GaAs film and interface. Both PMA and (NH4)2S treatments on a SiON/GaAs MOS capacitor produce better interface quality and lower interface state density (Dit) compared with ones without hydrogen and sulfur passivations. The leakage current densities are improved to 7.1 × 10-8 A/cm2 and 1.8 × 10-7 A/cm2 at ±2 V. The dielectric constant of 5.6 and the effective oxide charges of -5.3 × 1010 C/cm2 are obtained. The hysteresis offset of the hysteresis loop is only 0.09 V. The lowest Dit is 2.7 × 1011 cm-2/eV at an energy of about 0.66 eV from the edge of the valence band.

  4. Diffused P+-N solar cells in bulk GaAs

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1982-01-01

    Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

  5. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  6. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  7. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  8. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  9. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia... General Agency operations not related to the current GAA/MSTS Southeast Asia Program, NSA Order 35 (OPR-2... lieu of those appearing in sections 3 and 4 of NSA Order 35 (OPR-2). Continental United States ports...

  10. Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Yuldashev, Shavkat U.; Panin, Gennady N.; Choi, Sung Woo; Yalishev, Vadim Sh.; Nosova, Ludmila A.; Ryu, Min Ki; Lee, Sanghern; Jang, Min Su; Chung, Kwan Soo; Kang, Tae Won

    2003-06-01

    Undoped ZnO films were deposited on GaAs substrates by conventional rf magnetron sputtering technique. After thermal annealing at temperatures of 500°C and higher for 20 min, the Hall coefficient of ZnO films on GaAs substrate becomes positive. The long-time annealing of 550 min at a temperature of 400°C also converts the sign of the Hall coefficient to positive. X-ray microanalysis shows that the diffusion of Zn atoms into the GaAs substrate and Ga atoms from the GaAs substrate into the ZnO film during thermal annealing occurs. The results of Hall measurements were analyzed by using the two-layer model of conductivity. It was shown that the positive sign of the Hall coefficient for the annealed ZnO film on the GaAs substrate is due to p-type conductivity of the GaAs substrate as a result of the diffusion of the Zn atoms from ZnO film into the GaAs substrate. With increasing annealing temperature or annealing time the ZnO films become more n-type due to the diffusion of Ga atoms from the GaAs substrate into the ZnO film.

  11. Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

    NASA Astrophysics Data System (ADS)

    Jameel, D. A.; Aziz, M.; Felix, J. F.; Al Saqri, N.; Taylor, D.; Albalawi, H.; Alghamdi, H.; Al Mashary, F.; Henini, M.

    2016-11-01

    This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I-V measurements at different temperatures (20-420 K). The I-V results indicate that the value of the rectification ratio (IF/IR) at 0.5 V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier Φbarb of SPAN/(311)B (calculated from the plots of Φb 0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore, the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates.

  12. Electro-optic imagery of high-voltage GaAs photoconductive switches

    SciTech Connect

    Falk, R.A.; Adams, J.C.; Capps, C.D.; Ferrier, S.G.; Krinsky, J.A. )

    1995-01-01

    The authors present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

  13. Implementation and Performance of GaAs Digital Signal Processing ASICs

    NASA Technical Reports Server (NTRS)

    Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

    1993-01-01

    The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

  14. Anti-inflammatory, free radical scavenging and alpha-glucosidase inhibitory activities of Hamelia patens and its chemical constituents.

    PubMed

    Jiménez-Suárez, Verónica; Nieto-Camacho, Antonio; Jiménez-Estrada, Manuel; Alvarado Sánchez, Brenda

    2016-09-01

    Context Hamelia patens Jacq. (Rubiaceae) is traditionally used to treat wounds, inflammation and diabetes. However, there is still a lack of scientific evidence to support these applications. Objective The objective of this study is to evaluate the anti-inflammatory, antioxidant and antidiabetic activities of Hamelia patens, and identify its bioactive compounds. Materials and methods Four extracts were obtained by maceration and liquid-liquid extraction: HEX, DCM-EtOAc, MeOH-EtOAc and MeOH-Aq. The anti-inflammatory effect was evaluated orally on rat paw carrageenan-induced oedema over 6 h (50, 200 and 500 mg/kg), and topically in mouse ear oedema induced by 12-tetradecanoylphorbol-13-acetate (TPA) after 4 h (0.5 and 1 mg/ear). We also evaluated myeloperoxidase levels in ear tissue, 2,2-diphenyl-1-picrylhydrazyl (DPPH) scavenging ability, and in vitro α-glucosidase inhibition. The chemical compounds were separated by column chromatography and identified by spectroscopic analysis. Results We found that the oral administration of the HEX extract at 500 and 200 mg/kg significantly decreased the carrageenan-induced inflammation after 1 and 3 h, respectively. The MeOH-EtOAc extract significantly inhibited myeloperoxidase activity (83.5%), followed by the DCM-EtOAc extract (76%), β-sitosterol/stigmasterol (72.7%) and the HEX extract (55%), which significantly decreased oedema induced by TPA at both doses, giving a similar effect to indomethacin. We also found that the MeOH-EtOAc, MeOH-Aq and DCM-EtOAc extracts showed good DPPH scavenging activity (IC50 values of 18.6, 93.9 and 158.2 μg/mL, respectively). The HEX extract showed the lowest α-glucosidase inhibition (an IC50 value of 26.07 μg/mL), followed by the MeOH-EtOAc extract (an IC50 value of 30.18 μg/mL), β-sitosterol/stigmasterol (IC50 34.6 μg/mL) and compound A ((6E,10E,14E,18E)-2,6,10,14,18,23-hexamethyl-2,6,10,14,18,22-tetracosahexaene, an IC50 value of 114.6 μg/mL), which were isolated for the first time from Hamelia patens. Discussion and conclusion Hamelia patens possesses anti-inflammatory, antioxidant and α-glucosidase inhibitory activities, which support its traditional use. These effects can be attributed to the identified compounds.

  15. Hypoglycemic activity of Pyrus biossieriana Buhse leaf extract and arbutin: Inhibitory effects on alpha amylase and alpha glucosidase

    PubMed Central

    Yousefi, Fatemeh; Mahjoub, Soleiman; Pouramir, Mahdi; Khadir, Fatemeh

    2013-01-01

    Background: The mechanism of hypoglycemic and hypolipidemic activities of Pyrus biossieriana Buhse leaf extract (PbBLE) and its phytochemical component arbutin, have not been well determined. The present study was performed to understand the hypoglycemic activity mechanisms of pbBLE and arbutin more clearly. Methods: In vitro enzymatic carbohydrate digestion with PbBLE and arbutin was assessed using α-amylase and α-glucosidase powders. The enzyme solutions were premixed with PbBLE and arbutin at different concentrations (0.1, 1, 10 and 100 mg/ml). Substrate solutions and colorimetric reagents were added to the reaction. The release of glucose was determined by spectrophotometric method. Acarbose was used as the positive control. Results: The extract (10, 100 mg/ ml) completely inhibit α- amylase and α- glucosidase activities. The extract produced higher reduction of α-amylase and α-glucosidase activity than arbutin. Inhibition at various concentrations (0.1, 1, 10, 100 mg/ml) were significantly different (p<0.05). Conclusion: Our results exhibited that both the extract and arbutin were able to suppress the enzymes strongly. PMID:24294470

  16. Alpha-amylase and alpha-glucosidase inhibition is differentially modulated by fucoidan obtained from Fucus vesiculosus and Ascophyllum nodosum.

    PubMed

    Kim, Kyung-Tae; Rioux, Laurie-Eve; Turgeon, Sylvie L

    2014-02-01

    Fucoidan is a water-soluble, negatively charged, biologically active polysaccharide found in great abundance in brown marine algae. However, the inhibition of α-amylase and α-glucosidase by fucoidan derived from two algal species (Ascophyllum nodosum and Fucus vesiculosus) harvested at different periods (accounting for seasonal and yearly variations) has never been investigated. It was found that fucoidans inhibited α-glucosidase differently, depending on the algal species from which it was extracted and the algae's season of harvest. Fucoidan extracted from A. nodosum was a more potent inhibitor of α-glucosidase, with an IC50 ranging from 0.013 to 0.047 mg/mL, than the inhibition by fucoidan extracted from F. vesiculosus (IC50=0.049 mg/mL). In contrast, fucoidan extracted from F. vesiculosus did not inhibit α-amylase activity, while fucoidan from A. nodosum decreased α-amylase activity by 7-100% at 5 mg/mL depending upon the algae harvest period. An IC50 of 0.12-4.64 mg/mL for fucoidan from A. nodosum was found for the α-amylase inhibition. The ability of fucoidan to inhibit α-amylase and α-glucosidase thus varies according to the algae species and harvest period. A. nodosum is more suitable than F. vesiculosus as a source of fucoidan to inhibit α-amylase and α-glucosidase activities. Their potential benefits towards Type 2 diabetes management should be further investigated. PMID:24388677

  17. Thielavins A, J and K: alpha-glucosidase inhibitors from MEXU 27095, an endophytic fungus from Hintonia latiflora

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Bioassay-guided fractionation of the bio-active organic extract obtained from solid-media culture of MEXU 27095, an endophytic fungus isolated from the Mexican medicinal plant Hintonia latiflora (Rubiaceae), led to separation of three tridepsides which were identified as thielavins A, J and K. All ...

  18. Empirical-Statistics Analysis for Zero-Failure GaAs MMICs Life Testing Data

    NASA Astrophysics Data System (ADS)

    Huang, Zheng-Liang; Yu, Fa-Xin; Zhang, Shu-Ting; Luo, Hao; Wang, Ping-Hui; Zheng, Yao

    GaAs MMICs (Monolithic Microwave Integrated Circuits) reliability is a critical part of the overall reliability of the thermal solution in semiconductor devices. With MMICs reliability improved, GaAs MMICs failure rates will reach levels which are impractical to measure with conventional methods in the near future. This letter proposes a methodology to predict the GaAs MMICs reliability by combining empirical and statistical methods based on zero-failure GaAs MMICs life testing data. Besides, we investigate the effect of accelerated factors on MMICs degradation and make a comparison between the Weibull and lognormal distributions. The method has been used in the reliability evaluation of GaAs MMICs successfully.

  19. Stalled DNA Replication Forks at the Endogenous GAA Repeats Drive Repeat Expansion in Friedreich's Ataxia Cells.

    PubMed

    Gerhardt, Jeannine; Bhalla, Angela D; Butler, Jill Sergesketter; Puckett, James W; Dervan, Peter B; Rosenwaks, Zev; Napierala, Marek

    2016-08-01

    Friedreich's ataxia (FRDA) is caused by the expansion of GAA repeats located in the Frataxin (FXN) gene. The GAA repeats continue to expand in FRDA patients, aggravating symptoms and contributing to disease progression. The mechanism leading to repeat expansion and decreased FXN transcription remains unclear. Using single-molecule analysis of replicated DNA, we detected that expanded GAA repeats present a substantial obstacle for the replication machinery at the FXN locus in FRDA cells. Furthermore, aberrant origin activation and lack of a proper stress response to rescue the stalled forks in FRDA cells cause an increase in 3'-5' progressing forks, which could enhance repeat expansion and hinder FXN transcription by head-on collision with RNA polymerases. Treatment of FRDA cells with GAA-specific polyamides rescues DNA replication fork stalling and alleviates expansion of the GAA repeats, implicating DNA triplexes as a replication impediment and suggesting that fork stalling might be a therapeutic target for FRDA.

  20. A study of binding biotinylated nano-beads to the surface of (001) GaAs

    NASA Astrophysics Data System (ADS)

    Ding, Ximing; Moumanis, Khalid; Dubowski, Jan J.; Frost, Eric H.

    2006-02-01

    We have investigated the deposition of biotinylated nano-beads on the surface of GaAs. The deposition procedure involved either direct coating of (001) GaAs with nano-beads, or binding the nano-beads with avidin immobilized on the surface of (001) GaAs through the interface of biotin and the NH II terminal group of 11-amino-1-undecanethiol (HS(CH II) 11NH II). The efficiency of binding was tested by washing the samples in a solution of a commercial detergent and by subjecting them to a deionized water ultrasonic bath. The results indicate that nano-beads deposited directly on the surface of (001) GaAs withstand the detergent washing test but they are easily removed by ultrasonic washing. In contrast, the nano-beads attached to (001) GaAs through the avidin-biotin-thiol interface survive the ultrasonic washing tests.

  1. Improvement of interface electronic properties of GaF 3/GaAs MIS structures

    NASA Astrophysics Data System (ADS)

    Ricard, H.; Aizawa, K.; Ishiwara, H.

    The interface electronic properties of GaF 3/GaAs structures are investigated for three different deposition procedures, the GaF 3 films have been deposited on n-type GaAs epitaxial layers without breaking the vacuum, or after being exposed to air, or after being treated in (NH 4) 2S 1 solution. It has been found from low-temperature C-V measurements in MIS diodes that a real modulation of the Fermi level in the forbidden band gap of GaAs occurs only when the GaAs epitaxial layer is treated in the sulfur solution and annealed at an optimum temperature prior to deposition of GaF 3. The unpinning mechanism is also discussed in conjunction with the simplified model for sulfur-treated GaAs surfaces.

  2. Stalled DNA Replication Forks at the Endogenous GAA Repeats Drive Repeat Expansion in Friedreich's Ataxia Cells.

    PubMed

    Gerhardt, Jeannine; Bhalla, Angela D; Butler, Jill Sergesketter; Puckett, James W; Dervan, Peter B; Rosenwaks, Zev; Napierala, Marek

    2016-08-01

    Friedreich's ataxia (FRDA) is caused by the expansion of GAA repeats located in the Frataxin (FXN) gene. The GAA repeats continue to expand in FRDA patients, aggravating symptoms and contributing to disease progression. The mechanism leading to repeat expansion and decreased FXN transcription remains unclear. Using single-molecule analysis of replicated DNA, we detected that expanded GAA repeats present a substantial obstacle for the replication machinery at the FXN locus in FRDA cells. Furthermore, aberrant origin activation and lack of a proper stress response to rescue the stalled forks in FRDA cells cause an increase in 3'-5' progressing forks, which could enhance repeat expansion and hinder FXN transcription by head-on collision with RNA polymerases. Treatment of FRDA cells with GAA-specific polyamides rescues DNA replication fork stalling and alleviates expansion of the GAA repeats, implicating DNA triplexes as a replication impediment and suggesting that fork stalling might be a therapeutic target for FRDA. PMID:27425605

  3. Microwave characteristics of an optically controlled GaAs MESFET

    NASA Astrophysics Data System (ADS)

    Mizuno, H.

    1983-07-01

    This paper presents the results of an experimental investigation of microwave characteristics of a GaAs MESFET under optically direct-controlled conditions. The gain, drain current, and S-parameters were measured under various optical conditions in the frequency region from 3.0 GHz to 8.0 GHz., and it was found that they can be controlled by varying the incident light intensity in the same manner as when varying the gate bias voltage. As applications of this phenomenon, optical/microwave transformers and an optically switched amplifiers were investigated.

  4. High speed GaAs static RAM technology and design

    NASA Astrophysics Data System (ADS)

    Lundgren, R. E.; Waldner, M.

    A design and analysis study of potential high-speed GaAs MESFET memory circuits was performed. The results show that a 1-kbit static RAM having a 1-ns access time is feasible using low-power enhancement-mode MESFETs to realize static flip-flop memory cells; power dissipation would be 5 microwatts per cell. To achieve maximum memory speed, the control and drive circuitry incorporates depletion-mode devices throughout; total power dissipation would be about 1 W. Details of the memory design and analysis are presented.

  5. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  6. Hydrogen Effects on GaAs Device Reliability

    NASA Technical Reports Server (NTRS)

    Kayali, Sammy A.

    1996-01-01

    GaAs and InP devices in hermetically sealed packages have been observed to exhibit unacceptable degradation in both RF and DC characteristics. This degradation has been observed to occur at temperatures as low as 125oC. The source of the degradation has been linked to hydrogen gas that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt or Pd metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics.

  7. Activation modeling of Si implanted GaAs

    NASA Astrophysics Data System (ADS)

    Apiwatwaja, R.; Gwilliam, R.; Wilson, R.; Sealy, B. J.

    1997-02-01

    The total concentration of ionized impurities in silicon implanted GaAs was estimated from carrier concentration and mobility values obtained by Hall effect measurements together with published compensations. We have demonstrated that the calculated profiles (ND++NA-) are in good agreement with that of the silicon atomic distributions obtained by secondary-ion-mass spectroscopy. We have observed that a large concentration of gallium vacancies are injected into the sample during a 900 °C anneal for 1000 s using a Si3N4 cap.

  8. Molecular dynamics simulations of displacement cascades in GaAs.

    SciTech Connect

    Foiles, Stephen Martin

    2010-04-01

    The quantification of the production of primary defects via displacement cascades is an important ingredient in the prediction of the influence of radiation on the performance of electronic components in radiation environments. Molecular dynamics simulations of displacement cascades are performed for GaAs The interatomic interactions are described using a recently proposed Bond Order Potential, and a simple model of electronic stopping is incorporated. The production of point defects is quantified as a function of recoil energy and recoil species. Correlations in the point defects are examined. There are a large number of anti-site defects nearest-neighbor pairs as well as di-vacancies and larger order vacancy clusters. Radiation damage and ion implantation in materials have been studied via molecular dynamics for many years. A significant challenge in these simulations is the detailed identification and quantification of the primary defect production. For the present case of a compound semiconductor, GaAs, there are a larger number of possible point defects compared to elemental materials; two types of vacancies, two types of interstitials and antisite defects. This is further complicated by the fact that, in addition to the formation of point defects, amorphous zones may also be created. The goal of the current work is to quantify the production of primary defects in GaAs due to radiation exposures. This information will be used as part of an effort to predict the influence of radiation environments on the performance of electronic components and circuits. The data provide the initial state for continuum-level analysis of the temporal evolution of defect populations. For this initial state, it is important to know both the number of the various point defects that may be produced as well as the initial spatial correlations between the primary defects. The molecular dynamics simulations employ a recently developed Bond Order Potential (BOP) for GaAs. The analysis

  9. Evaluation of clonal herbs of Lamiaceae species for management of diabetes and hypertension.

    PubMed

    Kwon, Young-In I; Vattem, Dhiraj A; Shetty, Kalidas

    2006-01-01

    In the current study, we screened 7 clonal lines from single seed phenotypes of Lamiaceae family for the inhibition of alpha-amylase, alpha-glucosidase and angiotensin converting enzyme (ACE) inhibitory activity. Water extracts of oregano had the highest alpha-glucosidase inhibition activity (93.7%), followed by chocolate mint (85.9%) and lemon balm (83.9%). Sage (78.4 %), and three different clonal lines of rosemary: rosemary LA (71.4%), rosemary 6 (68.4%) and rosemary K-2 (67.8%) also showed significant alpha-glucosidase inhibitory activity. The alpha-glucosidase inhibitory activity of the extracts was compared to selected specific phenolics detected in the extracts using HPLC. Catechin had the highest alpha-glucosidase inhibitiory activity (99.6 %) followed by caffeic acid (91.3 %), rosmarinic acid (85.1%) and resveratrol (71.1 %). Catechol (64.4%), protocatechuic acid (55.7%) and quercetin (36.9%) also exhibited significant alpha-glucosidase inhibitory activity. Results suggested that alpha-glucosidase inhibitory activity of the clonal extracts correlated to the phenolic content, antioxidant activity and phenolic profile of the extracts. The clonal extracts of the herbs and standard phenolics tested in this study did not have any effect on the alpha-amylase activity. We also investigated the ability of the clonal extracts to inhibit rabbit lung angiotensin I-converting enzyme (ACE). The water extracts of rosemary, rosemary LA had the highest ACE inhibitory activity (90.5%), followed by lemon balm (81.9%) and oregano (37.4 %). Lower levels of ACE inhibition were observed with ethanol extracts of oregano (18.5 %) and lemon balm (0.5 %). Among the standard phenolics only resveratrol (24.1 %), hydroxybenzoic acid (19.3 %) and coumaric acid (2.3 %) had ACE inhibitory activity.

  10. High-efficiency GaAs solar cells

    SciTech Connect

    Knechtli, R.C.; Loo, R.Y.

    1984-05-01

    An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space applications. As a milestone toward the practical application of AlGaAs-GaAs solar cells in space systems, a brief account is provided on the development status of small experimental AlGaAs-GaAs solar-cell panels for specific space flights.

  11. Sn-seeded GaAs nanowires grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A.

    2016-05-01

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities.

  12. GaAs photocathodes for low light level imaging

    NASA Astrophysics Data System (ADS)

    André, J. P.; Guittard, P.; Hallais, J.; Piaget, C.

    1981-10-01

    The use of high efficiency GaAs transmission mode photocathodes in image tubes is an achievement which has been made possible thanks to the improvement of material technology and vacuum technology. As background into the description of the material technology, the device characteristics are used for the definition of the material criteria. Possible epitaxial structures and growth methods which have been studied for the preparation of the material are reviewed with emphasis on the GaAs/(Al,Ga)As/ transparent window type of structure. Recent progress in MOVPE shows that this technique is now capable of growing high quality GaAs(Al,Ga)As double heterostructures suitable for photocathode fabrication. The assessment of p-type GaAs active layers shows electron diffusion lengths of 5 to 7 μm for a doping level of 1 × 10 19cm-3 with neglectible interface recombination. Reproduvibility of the results and further development of MOVPE for large scale growth of photocathode materials is discussed.

  13. Sn-seeded GaAs nanowires grown by MOVPE.

    PubMed

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A

    2016-05-27

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities. PMID:27087548

  14. Sol-gel derived ? thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Arscott, S.; Smith, N.; Kurchania, R.; Milne, S. J.; Miles, R. E.

    1998-02-01

    Sol-gel derived thin films of lead zirconate titanate (PZT) have been fabricated on a platinized GaAs substrate using a propane-1,3-diol based sol-gel route. PZT can be used as the piezoelectric component in bulk acoustic wave devices for monolithic microwave integrated circuit applications. A 100 nm silicon nitride buffer layer was deposited onto the GaAs by plasma-enhanced chemical vapour deposition in order to prevent gallium and arsenic outdiffusion during film fabrication. Rapid thermal processing (RTP) techniques were employed to decompose thermally the sol-gel layer to PZT in a further effort to minimize problems of gallium and arsenic outdiffusion. Adhesion between the bottom electrode and substrate was found to improve when an intermediate titanium layer deposited between the platinum and silicon nitride was oxidized prior to deposition of the platinum electrode. A crystalline PZT film was produced on the 0268-1242/13/2/016/img9 substrate configuration by firing the sol-gel coating at 0268-1242/13/2/016/img10C for 10 s using RTP. A single deposition of sol resulted in a film having a thickness of 0268-1242/13/2/016/img11. Ferroelectric hysteresis measurements yielded average values of remanant polarization and coercive field of 0268-1242/13/2/016/img12 and 0268-1242/13/2/016/img13 respectively.

  15. Image processing using Gallium Arsenide (GaAs) technology

    NASA Technical Reports Server (NTRS)

    Miller, Warner H.

    1989-01-01

    The need to increase the information return from space-borne imaging systems has increased in the past decade. The use of multi-spectral data has resulted in the need for finer spatial resolution and greater spectral coverage. Onboard signal processing will be necessary in order to utilize the available Tracking and Data Relay Satellite System (TDRSS) communication channel at high efficiency. A generally recognized approach to the increased efficiency of channel usage is through data compression techniques. The compression technique implemented is a differential pulse code modulation (DPCM) scheme with a non-uniform quantizer. The need to advance the state-of-the-art of onboard processing was recognized and a GaAs integrated circuit technology was chosen. An Adaptive Programmable Processor (APP) chip set was developed which is based on an 8-bit slice general processor. The reason for choosing the compression technique for the Multi-spectral Linear Array (MLA) instrument is described. Also a description is given of the GaAs integrated circuit chip set which will demonstrate that data compression can be performed onboard in real time at data rate in the order of 500 Mb/s.

  16. Subnanosecond, high voltage photoconductive switching in GaAs

    SciTech Connect

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. ); O'Bannon, B.J. )

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  17. High-efficiency nanostructured window GaAs solar cells.

    PubMed

    Liang, Dong; Kang, Yangsen; Huo, Yijie; Chen, Yusi; Cui, Yi; Harris, James S

    2013-10-01

    Nanostructures have been widely used in solar cells due to their extraordinary optical properties. In most nanostructured cells, high short circuit current has been obtained due to enhanced light absorption. However, most of them suffer from lowered open circuit voltage and fill factor. One of the main challenges is formation of good junction and electrical contact. In particular, nanostructures in GaAs only have shown unsatisfactory performances (below 5% in energy conversion efficiency) which cannot match their ideal material properties and the record photovoltaic performances in industry. Here we demonstrate a completely new design for nanostructured solar cells that combines nanostructured window layer, metal mesa bar contact with small area, high quality planar junction. In this way, we not only keep the advanced optical properties of nanostructures such as broadband and wide angle antireflection, but also minimize its negative impact on electrical properties. High light absorption, efficient carrier collection, leakage elimination, and good lateral conductance can be simultaneously obtained. A nanostructured window cell using GaAs junction and AlGaAs nanocone window demonstrates 17% energy conversion efficiency and 0.982 V high open circuit voltage.

  18. Thermal stress cycling of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Janousek, B. K.; Francis, R. W.; Wendt, J. P.

    1985-01-01

    A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

  19. Sn-seeded GaAs nanowires grown by MOVPE.

    PubMed

    Sun, Rong; Vainorius, Neimantas; Jacobsson, Daniel; Pistol, Mats-Erik; Lehmann, Sebastian; Dick, Kimberly A

    2016-05-27

    It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p-n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved in a broad temperature window by changing the TMGa precursor flow simultaneously with decreasing temperature to prevent nanowire kinking at low temperatures. We find that changes in the supply of both AsH3 and TMGa can lead to nanowire kinking and that the formation of twin planes is closely related to a low V/III ratio. From PL results, we observe an increase of the average luminescence energy induced by heavy doping which shifts the Fermi level into the conduction band. Furthermore, the doping level of Sn and C is dependent on both the temperature and the V/III ratio. These results indicate that using Sn as the seed particle for nanowire growth is quite different from traditionally used Au in for example growth conditions and resulting nanowire properties. Thus, it is very interesting to explore alternative metal seed particles with controllable introduction of other impurities.

  20. 28 percent efficient GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Macmillan, H. F.; Hamaker, H. C.; Kaminar, N. R.; Kuryla, M. S.; Ladle Ristow, M.

    1988-01-01

    AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27 percent at high solar concentrations (over 400 suns, AM1.5D, 100 mW/sq cm) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1 percent around 400 suns, and the best p/n cell achieved an efficiency of 27.5 percent around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.

  1. GaAs clean up studied with synchrotron radiation photoemission

    NASA Astrophysics Data System (ADS)

    Tallarida, Massimo; Adelmann, Christoph; Delabie, Annelies; van Elshocht, Sven; Caymax, Matty; Schmeisser, Dieter

    2012-12-01

    In this contribution we describe the chemical changes at the surface of GaAs upon adsorption of tri-methyl-aluminum (TMA). TMA is used to grow Al2O3 with atomic layer deposition (ALD) usually using H2O as oxygen source. Recently, it was pointed out that the adsorption of TMA on various III-V surfaces reduces the native oxide, allowing the growth of an abrupt III-V/High-K interface with reduced density of defects. Synchrotron radiation photoemission spectroscopy (SR-PES) is a powerful method to characterize surfaces and interfaces of many materials, as it is capable to determine their chemical composition as well as the electronic properties. We performed in-situ SR-PES measurements after exposing a GaAs surface to TMA pulses at about 250°C. Upon using the possibility of tuning the incident photon energy we compared the Ga3d spectra at 41 eV, 71 eV, 91 eV and 121 eV, as well as the As3d at 71 eV and 91 eV. Finally, we show that using SR-PES allows a further understanding of the surface composition, which is usually not accessible with other techniques.

  2. Step-step interactions on GaAs (110) nanopatterns

    SciTech Connect

    Galiana, B.; Benedicto, M.; Tejedor, P.

    2013-01-14

    The step-step interactions on vicinal GaAs (110) surface patterns have been extracted from the quantitative analysis of the terrace width distribution (TWD). We have specifically studied the interactions in near-equilibrium faceting and kinetics-driven step bunching and meandering formed by spontaneous self-organization or through the modification of GaAs growth kinetics by atomic hydrogen. We show that the experimental TWDs determined from atomic force microscopy measurements can be accurately described by a weighed sum of a generalized Wigner distribution and several Gaussians. The results of our calculations indicate that straight facets are formed during high temperature homoepitaxy due to attractive interactions between [110] steps. At low temperatures, steady state attractive interactions in [110] step bunches are preceded by a transition regime dominated by entropic and energetic repulsions between meandering [11n]-type steps (n {>=} 2), whose population density exceeds that of the [110] bunched steps. In addition, it has been found that atomic H reduces the attractive interactions between [110] bunched steps and enhances entropic and dipole-induced energetic repulsions between H-terminated [11n] steps through the inhibition of As-As bond formation at step edges. Our analysis has evidenced a correlation between the value of the adjustable parameter that accounts in our model for the specific weight of the secondary peaks in the TWD ({beta}) and the extent of transverse meandering on the vicinal surface.

  3. Preparation of pulse plated GaAs films

    NASA Astrophysics Data System (ADS)

    Murali, K. R.; Trivedi, D. C.

    2006-07-01

    Thin GaAs films were prepared by pulse plating from an aqueous solution containing 0.20 M GaCl3 and 0.15 M As2O3 at a pH of 2 and at room temperature. The current density was kept as 50 mA cm-2 the duty cycle was varied in the range 10 50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1 M polysulphide electrolyte. At 60 mW cm-2 illumination, an open circuit voltage of 0.5 V and a short circuit current density of 5.0 mA cm-2 were observed for the films deposited at a duty cycle of 50%.

  4. Phase Transformation in Radially Merged Wurtzite GaAs Nanowires

    PubMed Central

    2015-01-01

    III–V Nanowires (NWs) grown with metal–organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. In particular, we investigated what happens when adjacent WZ NWs radially merge with each other by analyzing the evolution of XRD peaks for different amounts of radial overgrowth and merging. By preparing cross-sectional lamella samples we also analyzed the local crystal structure of partly merged NWs by transmission electron microscopy. Once individual NWs start to merge, the crystal structure of the merged segments is transformed progressively from initial pure WZ to a mixed WZ/ZB structure. The merging process is then modeled using a simple combinatorial approach, which predicts that merging of two or more WZ NWs will result in a mixed crystal structure containing WZ, ZB, and 4H. The existence large and relaxed segments of 4H structure within the merged NWs was confirmed by XRD, allowing us to accurately determine the lattice parameters of GaAs 4H. We compare the measured WZ and 4H unit cells with an ideal tetrahedron and find that both the polytypes are elongated in the c-axis and compressed in the a-axis compared to the geometrically converted cubic ZB unit cell. PMID:26494983

  5. Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  6. Raman-scattering and optical studies of argon-etched GaAs surfaces

    SciTech Connect

    Feng, G.F.; Zallen, R. ); Epp, J.M.; Dillard, J.G. )

    1991-04-15

    We have studied the structual damage in low-energy argon-ion-bombarded (ion-etched) GaAs using Raman scattering and ultraviolet reflectivity. When combined with post-bombardment sequential chemical etching, the Raman results reveal a graded depth profile of the damage layer, with a nearly linear damage dropoff with depth. The total damage-layer thickness is about 600 A for high-fluence bombardment with 3.89-keV Ar{sup +} ions. The spectral effects produced by argon etching are very different from those produced by high-energy ion implantation. The longitudinal-optic Raman line seen for argon-etched GaAs is not shifted and broadened as in ion-implanted GaAs. More striking are the results of the reflectivity measurements. For argon-etched GaAs, the electronic interband peaks are both broadened and strongly red shifted relative to the crystal peaks; for ion-implanted GaAs, only the broadening occurs. Distinct nanocrystals, which account for the effects seen in ion-implanted GaAs, are evidently absent in argon-etched GaAs. Instead, the damage layer caused by argon etching appears to be characterized by a very high density of point defects, which previous work suggests may be arsenic vacancies.

  7. Computational study of the Effect of Sulfur Passivation on GaAs Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Yu, Ted; Laghuvamarapu, Ramesh; Yan, Liang; You, Wei; Huffaker, Diana; Ratsch, Christian

    2013-03-01

    We report DFT calculations that study the effect of sulfur passivation ((NH4)2 S and octanethiol) on GaAs surfaces. Sulfur passivation of GaAs solar cells is an area of interest, as it improves the I-V characteristics of heterojunctions by decreasing the density of surface states. We elucidate the fundamental mechanism of sulfur passivation on GaAs by showing how the sulfur species react with different reconstructed GaAs (100) and (111B) surfaces. Using state of the art hybrid functionals to calculate band structures and density of states, we find that a reconstructed GaAs surface does not have mid-gap surface states. Therefore, we show that sulfur passivation does not reduce surface states on reconstructed surfaces. We also study arsenic vacancies and adatoms on these surfaces to determine the energies of creating these imperfections. They lead to mid-gap surface states that are shown to be energetically plausible in certain GaAs surface reconstruction. We study the most energetically favorable surface reconstructions with As vacancies and show how sulfur passivation plays a role in removing surface states. These results will guide in the selection of passivating agents for GaAs solar cells and lead to a better understanding of such systems. We appreciate the support of the NSF, Grant Number: DMR-1125931

  8. Ribbon growth of single crystal GaAs for solar cell application

    NASA Astrophysics Data System (ADS)

    Gould, T. A.; Seidensticker, R. G.; Mazelsky, R.

    1981-11-01

    This report describes the results of a 3-year effort to develop GaAs dendritic web for high-efficiency solar cells. A unique GaAs ribbon growth system was developed by applying dentritic-web growth techniques to a liquid-encapsulated GaAs system. Computerized thermal modelling and experimental modification produced a thermal geometry from which 48 GaAs webs were grown. These crystals had a multidendrite and/or faceted morphology rather than typical web morphology. Crystal quality improved as thermal geometry, growth techniques, dendrite seeds, and melt chemistry were optimized during the course of the program; however, conventional web morphology was not achieved. Analyses of chemical modification, crystal-growth characteristics, and orientation relationships suggest that inherent materials properties of GaAs produce a typical web morphology under conventional web-growth conditions. Consequently, a simple transfer of Si web growth technology to our GaAs system was inadequate for the growth of high quality GaAs web.

  9. Relationship between planar GaAs nanowire growth direction and substrate orientation

    NASA Astrophysics Data System (ADS)

    Dowdy, Ryan S.; Walko, Donald A.; Li, Xiuling

    2013-01-01

    Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of <111> B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.

  10. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  11. Sulfur-mediated palladium catalyst immobilized on a GaAs surface

    SciTech Connect

    Shimoda, M.; Konishi, T.; Nishiwaki, N.; Yamashita, Y.; Yoshikawa, H.

    2012-06-15

    We present a hard x-ray photoelectron spectroscopy study on the preparation process of palladium catalyst immobilized on an S-terminated GaAs(100) surface. It is revealed that Pd(II) species are reduced on the GaAs surface and yield Pd nanoparticles during the process of Pd immobilization and the subsequent heat treatment. A comparison with the results on GaAs without S-termination suggests that the reduction of Pd is promoted by hydroxy groups during the Pd immobilization and by S during the heat treatment.

  12. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study

    PubMed Central

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices. PMID:25337061

  13. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    PubMed

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  14. Guanidinoacetic acid versus creatine for improved brain and muscle creatine levels: a superiority pilot trial in healthy men.

    PubMed

    Ostojic, Sergej M; Ostojic, Jelena; Drid, Patrik; Vranes, Milan

    2016-09-01

    In this randomized, double-blind, crossover trial, we evaluated whether 4-week supplementation with guanidinoacetic acid (GAA) is superior to creatine in facilitating creatine levels in healthy men (n = 5). GAA (3.0 g/day) resulted in a more powerful rise (up to 16.2%) in tissue creatine levels in vastus medialis muscle, middle-cerebellar peduncle, and paracentral grey matter, as compared with creatine (P < 0.05). These results indicate that GAA as a preferred alternative to creatine for improved bioenergetics in energy-demanding tissues. PMID:27560540

  15. Antireflection coatings for GaAs solar cell applications

    NASA Astrophysics Data System (ADS)

    Alexieva, Z. I.; Nenova, Z. S.; Bakardjieva, V. S.; Milanova, M. M.; Dikov, Hr M.

    2010-04-01

    A double-layer structure of Al2O3 over ZrO2 film is studied. Minimization of the average weighted reflectance is carried out to optimize the thickness of the two layers in the antireflection coating. An optimal value of 2.17% for the weighted average reflection is estimated. The optimal thicknesses of the layers are 49 nm for the bottom and 45 nm for the top layer. Low temperature spin coating technique is used to deposit ZrO2 and Al2O3 films from sol gel solutions on polished silicon wafers, GaAs multilayer heterostructures and AlGaAs/GaAs solar cells. The density of the short-circuit photocurrent increases from 25 mA.cm-2 for solar cells without an antireflection coating to 36 mA.cm-2 for those with a double layer coating.

  16. The binding energies of a bulged GaAs nanowire

    NASA Astrophysics Data System (ADS)

    Zamani, A.; Estabar, Th.; Safarpour, Gh.; Moradi, M.

    2014-12-01

    As it is well-known the electronic structure of the semiconductor nanostructures are so sensitive to alteration of confinement while the nanostructure morphology often determines the confinement. Accordingly existence of a bulge on the wire surface will affect the features of the nanowire. In the present work we consider an on-center hydrogenic donor impurity in a GaAs nanowire with bulge. The ground and first excited states energy levels as well as their binding energies are calculated as functions of bulge and nanowire radius. It is found that both the energy levels and binding energies are strongly influenced by the bulge size for ultrafine nanowires. For large wire radii the effects of bulge existence is trivial and the electronic properties of the system approach to those of the simple nanowire.

  17. Thermal annealing of GaAs concentrator solar cells

    NASA Technical Reports Server (NTRS)

    Curtis, H. B.; Brinker, David J.

    1991-01-01

    Isochronal and isothermal annealing tests were performed on GaAs concentrator cells which were irradiated with electrons of various energies to fluences up to 1 x 10(exp 16) e/sq cm. The results include: (1) For cells irradiated with electrons from 0.7 to 2.3 MeV, recovery decreases with increasing electron energy. (2) As determined by the un-annealed fractions, isothermal and isochronal annealing produce the same recovery. Also, cells irradiated to 3 x 10(exp 15) or 1 x 10(exp 16) e/sq cm recover to similar un-annealed fractions. (3) Some significant annealing is being seen at 150 C although very long times are required.

  18. Morphology of thermal oxide layers on GaAs

    NASA Astrophysics Data System (ADS)

    Beserman, R.; Schwarz, S. A.; Hwang, D. M.; Chen, C. Y.

    1991-08-01

    The oxidation process of pure GaAs has been studied with use of several complementary experimental techniques: Raman scattering, electrical conductivity, transmission electron microscopy, and secondary-ion mass spectrometry. The morphology of the oxide layer and the oxide-GaAs interface evolve as a function of oxidation time. A high density of well-oriented As microcrystallites penetrates into the substrate, forming a conductive interfacial layer in the early stages of the oxidation process. After longer oxidation times, when the Raman As intensity and the interfacial conductivity are reduced, As is distributed into the oxide layer, forming crystallites that are no longer well oriented. Simultaneously, the crystalline gallium oxide breaks up to into microcrystallites that could provide channels for the outdiffusion of As. From the experimental evidence, we deduce that the interfacial density of crystalline As is reduced for long oxidation times.

  19. High gain GaAs photoconductive semiconductor switches: Switch longevity

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1998-07-01

    Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

  20. Effect of illumination uniformity on GaAs photoconductive switches

    SciTech Connect

    Donaldson, W.R.; Mu, L. . Lab. for Laser Energetics)

    1994-12-01

    The dynamic behavior of a GaAs photoconductive switch was studied with an electro-optic imaging system during the first 2 ns after optical illumination. The switch behavior changed as a function of the spatial distribution of the optical illumination. Symmetric and asymmetric illumination schemes were investigated experimentally with their electro-optic imaging system. The electric fields were significantly enhanced in the regions of low photo-carrier density. Approximately 1 ns after illumination the simple longitudinal variation of the electric field gave way to nonuniform transverse structure. The experimental results were modeled by treating the switch as an integral part of a transmission line consisting of discrete elements. The experimental results matched the predictions of the transmission-line model in terms of the electric-field enhancements and efficiency.

  1. Adsorption of Te on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Gobil, Y.; Cibert, J.; Saminadayar, K.; Tatarenko, S.

    1989-04-01

    We present a diagram of the GaAs-Te surface, precursor of the molecular beam epitaxy of CdTe on GaAs(100), as a function of As/Ga stoichiometry and Te coverage. In particular, three new GaAs-Te superstructures are reported: (2 × 1), "Te-poor" (6 × 1) and a (∗ × 3) incommensurate phase. Conditions of formation of the different surfaces are detailed and these surfaces are characterized using reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). On these surfaces, tellurium can be adsorbed on different sites: the Te3d {5}/{2} XPS line reveals three components located at 573.0, 572.6 and 572.1 eV which we attribute to Te mainly bound to As, to Ga and to adsorbed Te respectively, the relative population of these states depending on the precursor surface.

  2. Index grating lifetime in photorefractive GaAs

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Partovi, Afshin

    1988-01-01

    The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

  3. The effect of parental gender on the GAA dynamic mutation in the FRDA gene

    SciTech Connect

    Pianese, L.; Cavalcanti, F.; Calabrese, O. |

    1997-02-01

    Within a cooperative study, we recently isolated the defective gene (X25) causing Friedreich ataxia (FRDA), an autosomal recessive neurodegenerative disorder. X25 encodes a 210-amino acid protein, frataxin, whose function is unknown. Frataxin mRNA levels are reduced in FRDA patients. The most frequent mutation is the expansion of a (GAA){sub n} trinucleotide repeat in the first X25 intron. Normal chromosomes contain 8-22 copies of the triplet, whereas FRDA chromosomes contain >200 copies. In addition, we described few patients with point mutations. The expansion of trinucleotide repeats has been previously demonstrated to be the mutational mechanism associated with eight human diseases. Trinucleotide repeats occur both in coding and noncoding regions of the gene. Although trinucleotide repeats in the normal size range are relatively stable, expanded repeats are highly variable when transmitted from one generation to the next. For the eight previously described diseases, meiotic instability is generally associated with a mutational bias toward an increase in repeat number. Here, we analyze intergenerational variability in FRDA chromosomes in parent-carrier child pairs. In addition, we studied the stability of FRDA expanded alleles in male gametogenesis, directly analyzing male germ cells. 9 refs., 3 figs., 1 tab.

  4. XPS and AFM Study of GaAs Surface Treatment

    SciTech Connect

    Contreras-Guerrero, R.; Wallace, R. M.; Aguirre-Francisco, S.; Herrera-Gomez, A.; Lopez-Lopez, M.

    2008-11-13

    Obtaining smooth and atomically clean surfaces is an important step in the preparation of a surface for device manufacturing. In this work different processes are evaluated for cleaning a GaAs surface. A good surface cleaning treatment is that which provides a high level of uniformity and controllability of the surface. Different techniques are useful as cleaning treatments depending on the growth process to be used. The goal is to remove the oxygen and carbon contaminants and then form a thin oxide film to protect the surface, which is easy to remove later with thermal desorption mechanism like molecular beam epitaxy (MBE) with minimal impact to the surface. In this study, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to characterize the structure of the surface, the composition, as well as detect oxygen and carbon contaminant on the GaAs surface. This study consists in two parts. The first part the surface was subjected to different chemical treatments. The chemical solutions were: (a)H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O(4:1:100), (b) HCl: H{sub 2}O(1:3), (c)NH{sub 4}OH 29%. The treatments (a) and (b) reduced the oxygen on the surface. Treatment (c) reduces carbon contamination. In the second part we made MOS devices on the surfaces treated. They were characterized by CV and IV electrical measurements. They show frequency dispersion.

  5. Activating frataxin expression by repeat-targeted nucleic acids.

    PubMed

    Li, Liande; Matsui, Masayuki; Corey, David R

    2016-02-04

    Friedreich's ataxia is an incurable genetic disorder caused by a mutant expansion of the trinucleotide GAA within an intronic FXN RNA. This expansion leads to reduced expression of frataxin (FXN) protein and evidence suggests that transcriptional repression is caused by an R-loop that forms between the expanded repeat RNA and complementary genomic DNA. Synthetic agents that increase levels of FXN protein might alleviate the disease. We demonstrate that introducing anti-GAA duplex RNAs or single-stranded locked nucleic acids into patient-derived cells increases FXN protein expression to levels similar to analogous wild-type cells. Our data are significant because synthetic nucleic acids that target GAA repeats can be lead compounds for restoring curative FXN levels. More broadly, our results demonstrate that interfering with R-loop formation can trigger gene activation and reveal a new strategy for upregulating gene expression.

  6. Ohmic contacts to GaAs for high-temperature device applications

    NASA Technical Reports Server (NTRS)

    Anderson, W. T., Jr.; Christou, A.; Giuliani, J. F.; Dietrich, H. B.

    1981-01-01

    Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

  7. High-power question - Will diamonds be the next GaAs?

    NASA Astrophysics Data System (ADS)

    Manz, Barry

    1988-05-01

    It is shown that, due to the outstanding properties of diamond material, diamond technology offers much promise for microwave power generation. For example, diamond exhibits high dielectric breakdown voltage (10 to the 7th V, 50 times that of conventional semiconductors such as GaAs), high thermal conductivity (20 W/cm per C, which is about four times that of Cu), a low dielectric constant (5.5, half that of GaAs), and high saturated carrier velocity (2.7 times that of GaAs, Si, or InP). Moreover, unlike GaAs, Si, or InP, the saturated carrier velocity of diamond maintains its high rate in electric fields of increasing intensity. However, the process of growing pure thin-film material is still at experimental stages. The approaches used in growing diamond by the laboratories in the U.S, USSR, and Japan are discussed.

  8. Fracture strength of GaAs solar cells as a function of manufacturing process steps

    NASA Technical Reports Server (NTRS)

    Chen, C. P.; Leipold, M. H.

    1985-01-01

    Fracture of single crystal GaAs substrate during the solar cell processing is an important factor in solar cell yield and cost. Fracture mechanics technique was utilized to evaluate cell cracking characteristics and changes in fracture strength of GaAs solar cells in a present state-of-the-art of manufacturing process for GaAs solar cells from wafer to complete cell of a typical production line. Considerable change in the fracture strength of GaAs solar cells as a function of cell processing was found. The strength data were described by Weibull statistical analysis and can be interpreted with the change of flaw distribution of each of the manufacturing process steps.

  9. Consideration of velocity saturation in the design of GaAs varactor diodes

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Peatman, William C. B.; Zimmermann, Ruediger; Zimmermann, Ralph

    1993-01-01

    The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. Experimental data is presented which confirms that improved multiplier performance can be achieved.

  10. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  11. Direct Observation of the E_ Resonant State in GaAs1-xBix

    SciTech Connect

    Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

    2015-12-15

    Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

  12. First principles study of bismuth alloying effects in GaAs saturable absorber.

    PubMed

    Li, Dechun; Yang, Ming; Zhao, Shengzhi; Cai, Yongqing; Feng, Yuanping

    2012-05-01

    First principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBi(x)As(1-x) alloy as semiconductor saturable absorber in Q-switched or mode-locked laser.

  13. Free-standing GaAs nanowires growth on ITO glass by MOCVD

    NASA Astrophysics Data System (ADS)

    Wu, D.; Tang, X. H.; Olivier, A.; Li, X. Q.

    2015-04-01

    GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) glass substrate by metalorganic chemical vapour deposition (MOCVD), using Au nanoparticles (NPs) as catalyst. By functionalization of the ITO glass and optimization of the Au NPs deposition time, the Au NPs area density deposited on the ITO glass reaches 92 NP μm-2. Uniform and free-standing GaAs NWs without kinking or worm-shape defects have been grown at 430 °C. More than 96% of the NWs have tilt angles larger than 45° with respect of the substrate. The effects of the growth temperature and the Au NPs size on the GaAs NWs growth rate, the NW diameter, and tapering effect are investigated. These results of GaAs NWs growth are the essential step for understanding III-V NWs integration on transparent conductive oxide coated low cost substrate and developing high efficiencyhybrid solar cells.

  14. Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

    NASA Technical Reports Server (NTRS)

    Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

    2002-01-01

    Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

  15. Epitaxial thin film GaAs solar cells using OM-CVD techniques. [Organometallics

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

  16. Inversion of spin dependent photocurrent at Fe3O4/modulation doped GaAs heterointerfaces

    NASA Astrophysics Data System (ADS)

    Shirahata, Y.; Wada, E.; Itoh, M.; Taniyama, T.

    2011-04-01

    We demonstrate inversion of the spin dependent photocurrent across an Fe3O4/modulation doped GaAs interface under optical spin orientation condition. The spin dependent photocurrent for fully epitaxial Fe3O4/GaAs and Fe/GaAs interfaces clearly show the opposite magnetic field dependence, where the spin filtering efficiency for the Fe3O4/GaAs decreases with increasing magnetic field. The results clearly indicate that the spin polarization of the Fe3O4 layer has the opposite sign to that of Fe at the Fermi energy, consistent with theoretical predictions, and the result is a consequence of the atomically flat Fe3O4/GaAs interface we obtained.

  17. Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

    NASA Astrophysics Data System (ADS)

    Jena, B.; Pradhan, K. P.; Dash, S.; Mishra, G. P.; Sahu, P. K.; Mohapatra, S. K.

    2015-09-01

    In this work the sensitivity of process parameters like channel length (L), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed. Undoped GAA MOSFET is a radical invention as it introduces a new direction for transistor scaling. In conventional MOSFET, generally the channel doping concentration is very high to provide high on-state current, but in contrary it causes random dopant fluctuation and threshold voltage variation. So, the undoped nature of GAA MOSFET solves the above complications. Hence, we have analyzed the electrical characteristics as well as the analog/RF performances of undoped GAA MOSFET through Sentaurus device simulator.

  18. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  19. Enhancing optical absorption in InP and GaAs utilizing profile etching

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Fatemi, Navid S.; Landis, Geoffrey A.

    1991-01-01

    The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

  20. New dynamic FET logic and serial memory circuits for VLSI GaAs technology

    NASA Technical Reports Server (NTRS)

    Eldin, A. G.

    1991-01-01

    The complexity of GaAs field effect transistor (FET) very large scale integration (VLSI) circuits is limited by the maximum power dissipation while the uniformity of the device parameters determines the functional yield. In this work, digital GaAs FET circuits are presented that eliminate the DC power dissipation and reduce the area to 50% of that of the conventional static circuits. Its larger tolerance to device parameter variations results in higher functional yield.

  1. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    NASA Technical Reports Server (NTRS)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  2. Basic mechanisms study for MIS solar cell structures on GaAs

    NASA Technical Reports Server (NTRS)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  3. Ferromagnetic GaAs structures with single Mn delta-layer fabricated using laser deposition.

    PubMed

    Danilov, Yuri A; Vikhrova, Olga V; Kudrin, Alexey V; Zvonkov, Boris N

    2012-06-01

    The new technique combining metal-organic chemical vapor epitaxy with laser ablation of solid targets was used for fabrication of ferromagnetic GaAs structures with single Mn delta-doped layer. The structures demonstrated anomalous Hall effect, planar Hall effect, negative and anisotropic magnetoresistance in temperature range of 10-35 K. In GaAs structures with only single Mn delta-layer (without additional 2D hole gas channel or quantum well) ferromagnetism was observed for the first time.

  4. Possibility of incongruous interface behavior of In on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Chin, K. K.; Lindau, I.

    1985-11-01

    Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.

  5. Electron transfer and capture dynamics in ZnSe quantum wells grown on GaAs

    SciTech Connect

    Dongol, A.; Wagner, H. P.

    2013-12-04

    We investigate the transfer and capture dynamics of electrons in phase coherent photorefractive ZnSe quantum wells grown on GaAs using degenerate three-beam four-wave-mixing. The measurements reveal electron capture times by the quantum well in the order of several tens of picoseconds and a transit time of approximately 5 picoseconds from the GaAs substrate through the ZnMgSe barrier.

  6. High quality superconducting NbN thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Marsili, Francesco; Gaggero, Alessandro; Li, Lianhe H.; Surrente, Alessandro; Leoni, Roberto; Lévy, Francis; Fiore, Andrea

    2009-09-01

    A very promising way to increase the detection efficiency of nanowire superconducting single-photon detectors (SSPDs) consists in integrating them with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires transferring the challenging SSPD technology from the usual substrates, i.e. sapphire and MgO, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Therefore, we optimized the deposition process of few-nm thick superconducting NbN films on GaAs and AlAs/GaAs-based DBRs at low temperatures (substrate temperature TS = 400 °C), in order to prevent As evaporation. NbN films ranging from 150 to 3 nm in thickness were then deposited on single-crystal MgO, GaAs, MgO-buffered GaAs and DBRs by current-controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar+N2 plasma. 5.5 nm thick NbN films on GaAs exhibit TC = 10.7 K, ΔTC = 1.1 K and RRR = 0.7. The growth of such high quality thin NbN films on GaAs and DBRs has never been reported before.

  7. Enhanced light absorption in GaAs solar cells with internal Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tobin, S. P.; Vernon, S. M.; Sanfacon, M. M.; Mastrovito, A.

    The use of epitaxial multilayer dielectric mirrors (Bragg reflectors) as back-surface reflectors in thin-film GaAs solar cells on GaAs and silicon substrates is investigated. Al0.3Ga0.9As/Al0.85Ga0.15As Bragg reflectors were grown by low-pressure MOCVD on GaAs substrates and shown to exhibit near-ideal optical reflectance and structural perfection. Thin GaAs solar cells grown on Bragg reflectors showed increases in short-circuit current (0.5 to 1.0 mA/sq cm) and efficiency (0.7 percentage points) relative to cells without back reflectors. Efficiencies of 24.7 percent at one sun AM1.5 were measured for GaAs cells only 2 microns thick on Bragg reflectors. In addition to the optical enhancements, Bragg reflectors also appear to improve the defect structure of GaAs-on-Si solar cells. This approach should lead to improved efficiency for GaAs-on-Si solar cells and improved radiation resistance on GaAs cells.

  8. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  9. Antireflective disordered subwavelength structure on GaAs using spin-coated Ag ink mask.

    PubMed

    Yeo, Chan Il; Kwon, Ji Hye; Jang, Sung Jun; Lee, Yong Tak

    2012-08-13

    We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs d-SWSs rely on their geometric profiles, which were controlled by adjusting the distribution of Ag etch masks via changing the concentration of Ag atoms and the sintering temperature of Ag ink as well as the ICP etching conditions. The fabricated GaAs d-SWSs drastically reduced the reflection loss compared to that of bulk GaAs (>30%) in the wavelength range of 300-870 nm. The most desirable GaAs d-SWSs for practical solar cell applications exhibited a solar-weighted reflectance (SWR) of 2.12%, which is much lower than that of bulk GaAs (38.6%), and its incident angle-dependent SWR was also investigated.

  10. Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Ernest, F. P.; Stirn, R. J.

    1978-01-01

    Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

  11. Deficiency of RecA-dependent RecFOR and RecBCD pathways causes increased instability of the (GAA*TTC)n sequence when GAA is the lagging strand template.

    PubMed

    Pollard, Laura M; Chutake, Yogesh K; Rindler, Paul M; Bidichandani, Sanjay I

    2007-01-01

    The most common mutation in Friedreich ataxia is an expanded (GAA*TTC)n sequence, which is highly unstable in human somatic cells and in the germline. The mechanisms responsible for this genetic instability are poorly understood. We previously showed that cloned (GAA*TTC)n sequences replicated in Escherichia coli are more unstable when GAA is the lagging strand template, suggesting erroneous lagging strand synthesis as the likely mechanism for the genetic instability. Here we show that the increase in genetic instability when GAA serves as the lagging strand template is seen in RecA-deficient but not RecA-proficient strains. We also found the same orientation-dependent increase in instability in a RecA+ temperature-sensitive E. coli SSB mutant strain (ssb-1). Since stalling of replication is known to occur within the (GAA*TTC)n sequence when GAA is the lagging strand template, we hypothesized that genetic stability of the (GAA*TTC)n sequence may require efficient RecA-dependent recombinational restart of stalled replication forks. Consistent with this hypothesis, we noted significantly increased instability when GAA was the lagging strand template in strains that were deficient in components of the RecFOR and RecBCD pathways. Our data implicate defective processing of stalled replication forks as a mechanism for genetic instability of the (GAA*TTC)n sequence. PMID:17932052

  12. Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

    NASA Technical Reports Server (NTRS)

    Oyafuso, F.; Klimeck, G.; Boykin, T. B.; Bowen, R. C.; Allmen, P. von

    2003-01-01

    NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

  13. Aging and detergent washing effects of the surface of (001) and (110) GaAs passivated with hexadecanethiol

    NASA Astrophysics Data System (ADS)

    Moumanis, Kh.; Ding, X.; Dubowski, J. J.; Frost, E. H.

    2006-08-01

    We report on aging and detergent washing effects in GaAs wafers passivated with hexadecanethiol (HDT) [HS(CH2)15CH3]. The evolution of the photoluminescence (PL) signal from GaAs was measured at room temperature as a function of time, up to 1000h, for thiolated (001) GaAs that was solvent cleaned and etched using standard procedures, and for thiolated (110) GaAs that was obtained by cleaving in air. For 2h of thiolation time, the decay of the PL signal from (001) GaAs and (110) GaAs could be fitted, respectively, with double and single exponential functions. This indicates that at least two different types of non-adiative recombination centers (NRRC) form on the (001) surface. The overall density of surface states formed on (110) GaAs is significantly lower than those on (001) GaAs. A single exponential decay of the PL signal has been observed for 18h thiolated samples. The strong increase of the PL signal after detergent washing of (001) GaAs suggests that this treatment is effective in removal of some of the NRRC. The 19-fold enhancement of the PL signal, in comparison to that of the oxidized sample, has been obtained using the sample that, following the etching and detergent washing procedures, was thiolated with HDT.

  14. Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch.

    PubMed

    Shi, Wei; Gui, Huaimeng; Zhang, Lin; Ma, Cheng; Li, Mengxia; Xu, Ming; Wang, Luyi

    2013-07-01

    The effects of trigger laser pulse width on the jitter time of a GaAs photoconductive semiconductor switch (PCSS) is investigated in the experiment. The laser is split into two optical beams by a cross grating to excite two 3 mm gap GaAs PCSSs in parallel at the same time. This work reveals that the jitter time of the GaAs PCSS is reduced as the trigger laser pulse width decreases. Our results overcome a significant obstacle that hinders the testing and theory of GaAs PCSSs in high-time-precision synchronous control.

  15. Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

    NASA Astrophysics Data System (ADS)

    Wang, Yonggang; Ma, Xiaoyu; Zhong, Bin; Wang, Desong; Zhang, Qiulin; Feng, Baohua

    2004-01-01

    We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

  16. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  17. Defect studies in low-temperature-grown GaAs

    SciTech Connect

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

  18. GaAs Substrates for High-Power Diode Lasers

    NASA Astrophysics Data System (ADS)

    Mueller, Georg; Berwian, Patrick; Buhrig, Eberhard; Weinert, Berndt

    GaAs substrate crystals with low dislocation density (Etch-Pit Density (EPD) < 500,^-2) and Si-doping ( ~10^18,^-3) are required for the epitaxial production of high-power diode-lasers. Large-size wafers (= 3 mathrm{in} -> >=3,) are needed for reducing the manufacturing costs. These requirements can be fulfilled by the Vertical Bridgman (VB) and Vertical Gradient Freeze (VGF) techniques. For that purpose we have developed proper VB/VGF furnaces and optimized the thermal as well as the physico-chemical process conditions. This was strongly supported by extensive numerical process simulation. The modeling of the VGF furnaces and processes was made by using a new computer code called CrysVUN++, which was recently developed in the Crystal Growth Laboratory in Erlangen.GaAs crystals with diameters of 2 and 3in were grown in pyrolytic Boron Nitride (pBN) crucibles having a small-diameter seed section and a conical part. Boric oxide was used to fully encapsulate the crystal and the melt. An initial silicon content in the GaAs melt of c (melt) = 3 x10^19,^-3 has to be used in order to achieve a carrier concentration of n = (0.8- 2) x10^18,^-3, which is the substrate specification of the device manufacturer of the diode-laser. The EPD could be reduced to values between 500,^-2 and 50,^-2 with a Si-doping level of 8 x10^17 to 1 x10^18,^-3. Even the 3in wafers have rather large dislocation-free areas. The lowest EPDs ( <100,^-2) are achieved for long seed wells of the crucible.

  19. Carbohydrate-remodelled acid α-glucosidase with higher affinity for the cation-independent mannose 6-phosphate receptor demonstrates improved delivery to muscles of Pompe mice

    PubMed Central

    2005-01-01

    To enhance the delivery of rhGAA (recombinant GAA, where GAA stands for acid α-glucosidase) to the affected muscles in Pompe disease, the carbohydrate moieties on the enzyme were remodelled to exhibit a high affinity ligand for the CI-MPR (cation-independent M6P receptor, where M6P stands for mannose 6-phosphate). This was achieved by chemically conjugating on to rhGAA, a synthetic oligosaccharide ligand bearing M6P residues in the optimal configuration for binding the receptor. The carbonyl chemistry used resulted in the conjugation of approx. six synthetic ligands on to each enzyme. The resulting modified enzyme [neo-rhGAA (modified recombinant human GAA harbouring synthetic oligosaccharide ligands)] displayed near-normal specific activity and significantly increased affinity for the CI-MPR. However, binding to the mannose receptor was unaffected despite the introduction of additional mannose residues in neo-rhGAA. Uptake studies using L6 myoblasts showed neo-rhGAA was internalized approx. 20-fold more efficiently than the unmodified enzyme. Administration of neo-rhGAA into Pompe mice also resulted in greater clearance of glycogen from all the affected muscles when compared with the unmodified rhGAA. Comparable reductions in tissue glycogen levels in the Pompe mice were realized using an approx. 8-fold lower dose of neo-rhGAA in the heart and diaphragm and an approx. 4-fold lower dose in the skeletal muscles. Treatment of older Pompe mice, which are more refractory to enzyme therapy, with 40 mg/kg neo-rhGAA resulted in near-complete clearance of glycogen from all the affected muscles as opposed to only partial correction with the unmodified rhGAA. These results demonstrate that remodelling the carbohydrate of rhGAA to improve its affinity for the CI-MPR represents a feasible approach to enhance the efficacy of enzyme replacement therapy for Pompe disease. PMID:15839836

  20. A New GaAs Laser Radar for Atmospheric Measurements

    NASA Technical Reports Server (NTRS)

    Brown, R. T.; Stoliar, A. P.

    1973-01-01

    A special GaAs lidar using fiber coupled diode lasers was constructed for the purpose of measuring the extinction coefficient distribution within a large atmospheric volume at a rate compatible with atmospheric kinematics. The technique is based on taking backscatter signature ratios over spatial increments after the returns are normalized by pulse integration. Essential aspects of the lidar design are beam pulse power, repetition rate, detection system dynamic range and decay linearity. It was necessary to preclude the possibility of eye hazard under any operating conditions, including directly viewing the emitting aperture at close distance with a night-adapted eye. The electronic signal processing and control circuits were built to allow versatile operations. Extinction coefficient measurements were made in fog and clouds using a low-power laboratory version of the lidar, demonstrating feasibility. Data are presented showing range squared corrected backscatter profiles converted to extinction coefficient profiles, temporal signal fluctuations, and solar induced background noise. These results aided in the design of the lidar which is described. Functional tests of this lidar and the implications relevant to the design of a prototype model are discussed. This work was jointly sponsored by Sperry Rand Corporation under its Independent Research and Development program; the Air Force Avionics Laboratory, Wright Field, Dayton, Ohio; and the Naval Ammunition Depot, Crane, Indiana.

  1. GaAs quantum dot solar cell under concentrated radiation

    SciTech Connect

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-08-17

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V{sub OC}-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns.

  2. Fine structure of the Mn acceptor in GaAs

    NASA Astrophysics Data System (ADS)

    Krainov, I. V.; Debus, J.; Averkiev, N. S.; Dimitriev, G. S.; Sapega, V. F.; Lähderanta, E.

    2016-06-01

    We reveal the electronic level structure of the Mn acceptor, which consists of a valence-band hole bound to an Mn2 + ion, in presence of applied uniaxial stress and an external magnetic field in bulk GaAs. Resonant spin-flip Raman scattering is used to measure the g factor of the AMn0 center in the ground and excited states with the total angular momenta F =1 and F =2 and characterize the optical selection rules of the spin-flip transitions between these Mn-acceptor states. We determine the random stress fields near the Mn acceptor, the constant of the antiferromagnetic exchange interaction between the valence-band holes and the electrons of the inner Mn2 + shell as well as the deformation potential for the exchange energy. The p -d exchange energy, in particular, decreases significantly with increasing compressive stress. By combining the experimental Raman study with the developed theoretical model on the scattering efficiency, in which also the random local and external uniaxial stresses and magnetic field are considered, the fine structure of the Mn acceptor is determined in full detail.

  3. Planar GaAs diodes for THz frequency mixing applications

    NASA Technical Reports Server (NTRS)

    Bishop, William L.; Crowe, Thomas W.; Mattauch, Robert J.; Dossal, Hasan

    1992-01-01

    Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

  4. Engineering Filamentous Fungi for Conversion of d-Galacturonic Acid to l-Galactonic Acid

    PubMed Central

    Kuivanen, Joosu; Mojzita, Dominik; Wang, Yanming; Hilditch, Satu; Penttilä, Merja; Richard, Peter

    2012-01-01

    d-Galacturonic acid, the main monomer of pectin, is an attractive substrate for bioconversions, since pectin-rich biomass is abundantly available and pectin is easily hydrolyzed. l-Galactonic acid is an intermediate in the eukaryotic pathway for d-galacturonic acid catabolism, but extracellular accumulation of l-galactonic acid has not been reported. By deleting the gene encoding l-galactonic acid dehydratase (lgd1 or gaaB) in two filamentous fungi, strains were obtained that converted d-galacturonic acid to l-galactonic acid. Both Trichoderma reesei Δlgd1 and Aspergillus niger ΔgaaB strains produced l-galactonate at yields of 0.6 to 0.9 g per g of substrate consumed. Although T. reesei Δlgd1 could produce l-galactonate at pH 5.5, a lower pH was necessary for A. niger ΔgaaB. Provision of a cosubstrate improved the production rate and titer in both strains. Intracellular accumulation of l-galactonate (40 to 70 mg g biomass−1) suggested that export may be limiting. Deletion of the l-galactonate dehydratase from A. niger was found to delay induction of d-galacturonate reductase and overexpression of the reductase improved initial production rates. Deletion of the l-galactonate dehydratase from A. niger also delayed or prevented induction of the putative d-galacturonate transporter An14g04280. In addition, A. niger ΔgaaB produced l-galactonate from polygalacturonate as efficiently as from the monomer. PMID:23042175

  5. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth.

  6. Piezobirefringence effect in GaAs disks subjected to diametrical compression

    NASA Astrophysics Data System (ADS)

    Dutta, Aloke K.; Ajmera, Pratul K.; Huner, Burke

    1989-06-01

    In this communication, the simulated piezobirefringent images for a diametrically compressed GaAs disk are compared with those obtained experimentally. The values of the piezo-optic coefficients used in these simulations are derived from the elasto-optic coefficients and the stiffness constants for GaAs. The behavior of the stress-optic coefficient C for GaAs is also investigated. For (100)-oriented GaAs, the calculated value of C is found to vary with position for a given load and also found to depend on the orientation of the loading axis with respect to the principal crystal direction chosen to be <010> in this work. The calculated values of C for this case range from 0.8 to 2.6×10-12 cm2 /dyn. However, for (111)-oriented GaAs, no such dependence is observed and C is a constant with a calculated value of 1.94×10-12 cm2 /dyn.

  7. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations N D of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  8. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    NASA Astrophysics Data System (ADS)

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-01

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1) compared to experimental 0.035 eV (285.2 cm-1). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  9. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

    PubMed

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  10. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules.

  11. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  12. GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

    SciTech Connect

    Cardozo, Benjamin Lewin

    2004-01-01

    High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 1013 cm-3, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most likely due to the high compensation of the commercially grown GaAs absorbing layer, which restricts the depletion width of the device.

  13. Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

    NASA Technical Reports Server (NTRS)

    Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

    2003-01-01

    In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

  14. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    NASA Astrophysics Data System (ADS)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  15. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    PubMed Central

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-01-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination. PMID:27435899

  16. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    SciTech Connect

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  17. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    NASA Astrophysics Data System (ADS)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  18. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-20

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  19. Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength.

    PubMed

    Wu, Lin; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Wang, Reng; Liu, Ji

    2015-06-15

    We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.

  20. Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources

    SciTech Connect

    Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I.; Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P.

    2011-12-23

    The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

  1. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

    SciTech Connect

    Juang, Bor-Chau Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Lin, Andrew; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.

    2015-03-16

    There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAs substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.

  2. Interpolative modeling of GaAs FET S-parameter data bases for use in Monte Carlo simulations

    NASA Technical Reports Server (NTRS)

    Campbell, L.; Purviance, J.

    1992-01-01

    A statistical interpolation technique is presented for modeling GaAs FET S-parameter measurements for use in the statistical analysis and design of circuits. This is accomplished by interpolating among the measurements in a GaAs FET S-parameter data base in a statistically valid manner.

  3. Oral co-administration of α-lipoic acid, quercetin and captopril prevents gallium arsenide toxicity in rats.

    PubMed

    Bhatt, Kapil; Flora, S J S

    2009-07-01

    Gallium arsenide (GaAs), an inter-metallic semiconductor, known to exhibit superior optical and electronic properties compared to silicon, promotes its use in semiconductor industries. Extensive use of GaAs will inevitably lead to an increase in the exposure of workers manufacturing these products. Antioxidants are exogenous or endogenous compounds acting in several ways, including scavenging reactive oxygen species (ROS) or their precursors, inhibiting ROS formation, and binding metal ions needed for the catalysis of ROS generation. In the present study we investigated the protective efficacy of α-lipoic acid, quercetin and captopril individually against gallium arsenide exposure. Co-administration of α-lipoic acid with GaAs was most effective in reducing GaAs induced inhibition of blood δ-aminolevulinic acid dehydratase (ALAD) activity, liver, kidney and brain reduced glutathione (GSH) level and elevation of oxidized glutathione (GSSG). Captopril, on the other hand was effective in reducing thiobarbituric acid reactive substance (TBARS) levels, while quercetin reduced ROS in liver and kidney. The results suggest comparatively better preventive efficacy of concomitant α-lipoic acid administration during Gallium arsenide exposure compared to quercetin and captopril in preventing GaAs induced oxidative stress.

  4. Strain effect of multilayer FeN structure on GaAs substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaowei; Ji, Nian; Lauter, Valeria; Ambaye, Hailemariam; Wang, Jian-Ping

    2013-05-01

    Overly doped FeN multilayer structure on GaAs substrate was fabricated. After the post-annealing process, FeN martensite in each Fe/FeN layer formed partially chemically ordered Fe16N2, which was observed by X-ray diffraction. To detect the saturation magnetization (Ms) depth profile, polarized neutron reflectivity was conducted. Fe/FeN layer showed a significant improvement of Ms for each layer compared to Ms of Fe. More importantly, different FeN layers showed different Ms according to the physical distance to the substrate GaAs. The most enhanced Ms (exceeding the limit of Fe65Co35 Ms) observed at the bottom part of the film, consistent with previous reports, should be attributed to the lattice strain by GaAs substrate. In order to detect the lattice constant, In-plane X-ray Diffraction was done and a large in-plane lattice constant was determined.

  5. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-03-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4A2(4F) → 4T1(4G) and 4T1(4G) → 6A1(6S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs.

  6. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures. PMID:27008537

  7. Nanoscale footprints of self-running gallium droplets on GaAs surface.

    PubMed

    Wu, Jiang; Wang, Zhiming M; Li, Alvason Z; Benamara, Mourad; Li, Shibin; Salamo, Gregory J

    2011-01-01

    In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.

  8. Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Yang, Fangfang; Messing, Maria E.; Mergenthaler, Kilian; Pistol, Mats-Erik; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H.; Yartsev, Arkady

    2016-11-01

    In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

  9. Nitride surface passivation of GaAs nanowires: impact on surface state density.

    PubMed

    Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

    2015-01-14

    Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

  10. GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy.

    PubMed

    Guan, X; Becdelievre, J; Meunier, B; Benali, A; Saint-Girons, G; Bachelet, R; Regreny, P; Botella, C; Grenet, G; Blanchard, N P; Jaurand, X; Silly, M G; Sirotti, F; Chauvin, N; Gendry, M; Penuelas, J

    2016-04-13

    We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.

  11. A modified horizontal Bridgman technique without arsenic zone for growth of GaAs crystals

    NASA Astrophysics Data System (ADS)

    Chen, T. P.; Guo, Y. D.; Huang, T. S.

    1989-03-01

    A modified two temperature zone horizontal Bridgman system without arsenic zone has been developed for the growth of GaAs single crystal. In this process, a short quartz ampoule, which was just long enough for sealing off the boat, was used. With a short quartz ampoule and a large charge of polycrystalline GaAs, the arsenic loss due to the dissociation of the melt was very small. The sticking between the boat and the crystal was eliminated; therefore, the crystal yield was greatly enhanced. The possible reasons for the elimination of the boat sticking and the stoichiometry control in this process are discussed. High quality Si-doped GaAs crystals with 2 inches in diameter and 30 cm in length have been routinely grown. The optoelectronic devices fabricated with these wafers showed better performance than commercial products.

  12. The chemistry of O in reduction processes of the GaAs native oxides

    NASA Astrophysics Data System (ADS)

    Cuberes, M. T.; Sacedon, J. L.

    1992-05-01

    We present an X-ray photoelectron spectroscopy (XPS) study of the interfacial chemical reactions during the total reduction of a 5 Å thick GaAs native oxide layer accomplished in two separate stages. First, the As2O3 has been selectively reduced by annealing the oxidized surface at increasing temperatures. In the second stage, the reduction of the Ga oxides has been completed at room temperature by Si deposition. The total amount of O at the GaAs interface remains constant during both processes. During the As2O3 thermal reduction, the analysis of the Ga2p{3}/{2} and Ga LMM spectra shows that, depending on the annealing temperature, GaOx (x < {3}/{2}) or Ga2O3 growth occurs. The Si promoted of the Ga oxides results in the formation of Si oxides of different stoichiometry at the GaAs surface.

  13. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  14. Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

    PubMed Central

    Zhou, Wei; Chen, Xiao-Jia; Zhang, Jian-Bo; Li, Xin-Hua; Wang, Yu-Qi; Goncharov, Alexander F.

    2014-01-01

    The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments. PMID:25253566

  15. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    SciTech Connect

    Yang, Shang-Hua; Jarrahi, Mona

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more than 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.

  16. Selective thermal terahertz emission from GaAs and AlGaAs

    SciTech Connect

    Požela, K. Širmulis, E.; Kašalynas, I.; Šilėnas, A.; Požela, J.; Jucienė, V.

    2014-09-01

    The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled oscillations of free electron plasma and different branches of interface AlGaAs optical phonons. The effect of strong absorption of incident radiation with large oblique angle (26°) by heated GaAs and AlGaAs is revealed. The coherent THz radiation emission with the frequency of 7.6 THz from the heated high conductivity GaAs (n = 4 × 10{sup 18 }cm{sup −3}) layer is observed. The results are highly relevant to application in optoelectronic THz devices.

  17. Gallium loading of gold seed for high yield of patterned GaAs nanowires

    SciTech Connect

    Boulanger, J. P.; Chia, A. C. E.; LaPierre, R. R.

    2014-08-25

    A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

  18. Free carrier induced spectral shift for GaAs filled metallic hole arrays.

    PubMed

    Zhang, Jingyu; Xiang, Bin; Sheik-Bahae, Mansoor; Brueck, S R J

    2012-03-26

    For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.

  19. Optical techniques to feed and control GaAs MMIC modules for phased array antenna applications

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Anzic, G.; Kunath, R. R.; Connolly, D. J.

    1986-01-01

    A complex signal distribution system is required to feed and control GaAs monolithic microwave integrated circuits (MMICs) for phased array antenna applications above 20 GHz. Each MMIC module will require one or more RF lines, one or more bias voltage lines, and digital lines to provide a minimum of 10 bits of combined phase and gain control information. In a closely spaced array, the routing of these multiple lines presents difficult topology problems as well as a high probability of signal interference. To overcome GaAs MMIC phased array signal distribution problems optical fibers interconnected to monolithically integrated optical components with GaAs MMIC array elements are proposed as a solution. System architecture considerations using optical fibers are described. The analog and digital optical links to respectively feed and control MMIC elements are analyzed. It is concluded that a fiber optic network will reduce weight and complexity, and increase reliability and performance, but higher power will be required.

  20. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  1. A GaAs DETECTOR FOR DARK MATTER AND SOLAR NEUTRINO RESEARCH

    SciTech Connect

    T. BOWLES; ET AL

    2000-08-01

    The ability to produce large GaAs crystals with the requisite electronic properties to be fabricated into charged particle and photon detectors would provide a detector medium that would find numerous applications in both applied and fundamental research. Various applications would likely include x-ray detectors on satellites, environmental monitoring, medical imaging, bore hole mining spectroscopy, searches for dark matter, and solar neutrino research. We have carried out the development of GaAs detectors using two commercial crystal growing techniques. We have shown it should be able to grow detectors with 20 cm{sup 2} area and a depletion depth of 1 mm. Detectors of this size would find immediate applications in high-resolution, room temperature, low energy gamma ray measurements. We have also arrived at an understanding of the limitations of the common techniques used to grow GaAs and have determined that it should be possible to produce larger detectors using proprietary methods.

  2. Deep levels in semi-insulating LEC GaAs before and after silicon implantation

    SciTech Connect

    Dindo, S.; Abdel-Motaleb, I.; Lowe, K.; Tang, W.; Young, L.

    1985-11-01

    The deep trapping levels present before ion implantation of silicon into the semi-insulating LEC GaAs starting material were investigated using optical transient current spectroscopy (OTCS). MESFET channel current deep level transient spectroscopy (DLTS) was used for the implanted material. With a silicon nitride layer used t encapsulate the GaAs for postimplantation annealing and with implantation directly into the GaAs, it was found tha of seven or more deep levels seen in the semi-insulating substrate prior to silicon implantation only the level believed to be EL12 remained. On implanting through a thin Si/sub 3/N/sub 4/ encapsulating layer and annealing under Si/sub 3/N/sub 4/, only EL2 was found. With a silicon dioxide layer as an encapsulant, two traps remained and two apparently unreported levels appeared.

  3. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

    SciTech Connect

    Yerino, Christopher D. Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Dorogan, Vitaliy G.; Ware, Morgan E.; Mazur, Yuriy I.; Salamo, Gregory J.; Huffaker, Diana L.

    2014-08-18

    Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110–240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities for engineering the band alignment, band structure, and optical properties of epitaxial nanostructures.

  4. Growth of GaAs crystals from the melt in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1988-01-01

    The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

  5. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  6. Initial adsorption of Cr atoms on GaAs(0 0 1)

    NASA Astrophysics Data System (ADS)

    Yagyu, Kazuma; Komamiya, Daisuke; Yoshino, Junji

    2011-01-01

    Cr-adsorbed GaAs(0 0 1)-c(4×4)α surfaces were investigated in view of a preparatory stage before studying the growth of zincblende CrAs. Cr was adsorbed on a GaAs(001)-c(4×4)α surface at 200 °C followed by annealing for 2 min. Cr adsorbed surface was investigated with scanning tunneling microscopy at 80 K. Single Cr atom was identified after the classification of Cr dots grown on the surface. The results have suggested that a Cr atom adsorbs on a site between three Ga-As dimers. After further adsorption of Cr, the surface is covered by dots which are higher than a step height of the substrate.

  7. Study of the initial stages of growth of CdTe on (001)GaAs

    NASA Astrophysics Data System (ADS)

    Mar, H. A.; Salansky, N.; Chee, K. T.

    1984-05-01

    The initial stages of growth of CdTe on (001) GaAs have been studied using Auger electron spectroscopy and reflection high-energy electron techniques. At the growth temperature of 225 °C tellurium atoms are observed to be adsorbed to a thickness of one to two monolayers on a thermally cleaned GaAs substrate. However, cadmium atoms are adsorbed only when tellurium atoms are present. An analysis of the Auger electron spectra and the reflection high-energy electron diffraction patterns taken at intervals during the initial growth of CdTe films from a CdTe compound source indicates that growth takes place first by the deposition of one to two monolayers of tellurium. This is followed by the nucleation and growth of CdTe crystallites which increase in size and coalesce to form a single crystal of CdTe with a (111) CdTe ∥ (001) GaAs orientation.

  8. Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

    PubMed Central

    Wu, Jiang; Wang, Zhiming M.; Li, Alvason Z.; Benamara, Mourad; Li, Shibin; Salamo, Gregory J.

    2011-01-01

    In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems. PMID:21673965

  9. The ZnSe(110) puzzle - Comparison with GaAs(110)

    NASA Technical Reports Server (NTRS)

    Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

    1984-01-01

    The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

  10. Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process

    NASA Astrophysics Data System (ADS)

    Okada, Yoshitaka; Iuchi, Yoshimasa; Kawabe, Mitsuo; Harris, James S.

    2000-07-01

    The basic properties of GaAs oxide generated by atomic force microscope (AFM) tip-induced nano-oxidation process have been investigated. The chemical analysis of the AFM tip-generated GaAs oxide was performed by using scanning microprobe x-ray photoelectron spectroscopy, and the main constituents of GaAs anodic oxide were determined to be Ga2O3 and As2O3. The electrical characterization showed that the electron transport across a GaAs oxide nanodot of ˜5.7 nm thickness, from a doped n+-Si tip into the n+-GaAs substrate follows the Fowler-Nordheim tunneling mechanism over a range of applied bias. Further, the tip-generated GaAs oxide nanodots were found to withstand moderate thermal treatments, but some volume reduction was observed.

  11. Theory of Spin Hall Effect in GaAs

    NASA Astrophysics Data System (ADS)

    Engel, Hans-Andreas

    2006-03-01

    In the spin Hall effect, an electric current in a system with spin-orbit coupling induces a transverse spin current which leads to non-equilibrium spin accumulation near sample boundaries. Generating and manipulating non-equilibrium spin magnetization by electric fields is one of the most desirable goals of semiconductor spintronics, because electric fields have potentialities for accessing individual spins at nanometer scales. In this talk, I review the different spin-orbit coupling mechanisms in direct gap semiconductors and the implications of these mechanisms for the spin Hall effect. In particular, we recently developed a theory that accounts for spin-orbit coupling at charged impurities. This coupling leads to extrinsic spin currents that contain skew scattering and side jump contribution [1]. Applying our theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [2]. Also, such contributions are important for p-doped GaAs. Furthermore, we analyzed the effect of intrinsic spin-orbit coupling in the presence of anisotropic impurity scattering, and found that, somewhat surprisingly, an electrical field can lead to a bulk magnetization component perpendicular to both the spin-orbit field and an external magnetic field. These works have been done in collaboration with B.I. Halperin, E.I. Rashba, and A.A. Burkov. [1] H.-A. Engel, B.I. Halperin, and E.I. Rashba, Phys. Rev.Lett. 95, 166605 (2005). [2] Y.K. Kato, R.C. Myers, A.C. Gossard, and D.D. Awschalom, Science 306, 1910 (2004).

  12. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

    NASA Astrophysics Data System (ADS)

    Spicer, W. E.; Cao, R.; Miyano, K.; Kendelewicz, T.; Lindau, I.; Weber, E.; Liliental-Weber, Z.; Newman, N.

    1990-01-01

    Through the use of synchrotron radiation photoemission spectroscopy (PES) and related techniques, we have gained detailed knowledge of Fermi level pinning, interfacial chemistry and disruption of GaAs for coverages up to several monolayers (ML). A link has been made between these data and that in the thick layer regime (hundreds of ML), which characterizes practical Schottky diodes. PES results for thin layers deposited at room temperature (RT) and low temperatures of about 80 K (LT) as well as thick films deposited at RT and annealed to higher temperatures are considered. At LT where GaAs disruption is minimized for thin films, metal-induced gap states seem to dominate the Fermi level pinning process except where GaAs metal reactions are strong. For RT thin and thick films, the effects of defects must be considered, and the advanced unified defect model (AUDM) is applied. In the AUDM the key defects are identified as the AsGa (double donor with levels at 0.75 and 0.5 eV above the valence band maximum) and the GaAs antisite (double acceptor) with the AsGa normally dominating due to the excess As which characterizes LEC GaAs crystals. The literature is reviewed and a number of phenomena are explained in terms of this model including the Fermi level position on MBE grown GaAs observed by Svensson et al. and the anomolously high Schottky barrier height (SBH) of thick Ga on n-GaAs observed by several groups. By performing electrical, TEM, and chemical studies of thick diodes and by evaluating the changes upon thermal annealing of diodes it is found that the AUDM successfully predicts the increase or decrease of barrier height on annealing.

  13. Production of nanometer-size GaAs nanocristals by nanosecond laser ablation in liquid.

    PubMed

    Abderrafi, Kamal; Jiménez, Ernesto; Ben, Teresa; Molina, Sergio I; Ibáñez, Rafael; Chirvony, Vladimir; Martínez-Pastor, Juan P

    2012-08-01

    This paper reports the formation and characterization of spherical GaAs quantum dots obtained by nanosecond pulsed laser ablation in a liquid (ethanol or methanol). The produced bare GaAs nanoparticles demonstrate rather narrow size distribution which depends on the applied laser power density (from 4.25 to 13.9 J/cm2 in our experiments) and is as low as 2.5 nm for the highest power used. The absolute value of the average diameter also decreases significantly, from 13.7 to 8.7 nm, as the laser power increases in this interval. Due to the narrow nanoparticle size dispersion achieved at the highest laser powers two absorption band edges are clearly distinguishable at about 1.72 and 3.15 eV which are ascribed to E0 and E1 effective optical transitions, respectively. A comparison of the energies with those known for bulk GaAs allows one to conclude that an average diameter of the investigated GaAs nanoparticles is close to 10 nm, i.e., they are quantum dots. High resolution transmission electron microscopy (HRTEM) images show that the bare GaAs nanoparticles are nanocrystalline, but many of them exhibit single/multiple twin boundary defects or even polycrystallinity. The formation of the GaAs crystalline core capped with a SiO2 shell was demonstrated by HRTEM and energy dispersive X-ray (EDX) spectroscopy. Effective band edges can be better distinguished in SiO2 capped nanoparticles than in bare ones, In both cases the band edges are correlated with size quantum confinement effect.

  14. Influence of gossypol acetic acid on the growth of human adenoid cystic carcinoma ACC-M cells and the expression of DNA methyltransferase 1.

    PubMed

    Wu, Y; Wei, Y-N; Yue, W-Y; Chen, W-F; Fu, S

    2015-10-28

    We investigated the effects of gossypol acetic acid (GAA) on the proliferation, apoptosis, and expression of DNA methyltransferase 1 (DNMT1) mRNA in human adenoid cystic carcinoma (ACC-M) cells in vitro. The proliferation and apoptosis of ACC-M cells after treatment with different concentrations of GAA were detected using Cell Counting Kit-8 and flow cytometry, respectively. DNMT1 mRNA expression was measured by real-time fluorescence quantitative polymerase chain reaction. The growth of ACC-M cells was inhibited after treatment with GAA for 24, 48, and 72 h. The apoptotic rates of ACC-M cells after treatment with GAA for 72 h were higher than those of control cells (without treatment) (P < 0.05). DNMT1 mRNA expression in ACC-M after treatment with GAA for 72 h was lower than that in control cells (P < 0.05). GAA had inhibitory effects on the proliferation and induced apoptosis of human ACC-M cells, while GAA also reduced the expression level of DNMT1 mRNA in ACC-M cells.

  15. Low temperature growth and electrical characterization of insulators for GaAs MISFETS

    NASA Technical Reports Server (NTRS)

    Borrego, J. M.; Ghandhi, S. K.

    1981-01-01

    Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

  16. Thermal roughening of GaAs surface by dislocation-induced step-flow sublimation

    NASA Astrophysics Data System (ADS)

    Akhundov, I. O.; Kazantsev, D. M.; Kozhuhov, A. S.; Alperovich, V. L.

    2016-08-01

    The thermal roughening of epitaxial GaAs film surface is studied under anneals at temperatures 700-775 °C in the presence of a saturated Ga-As melt. Surface roughening consists in the formation of spiral “inverted pyramids” on the initially flat surface due to the step-flow sublimation induced by screw dislocations. The observed roughening indicates that, despite the presence of As and Ga vapors provided by the melt, the annealing conditions are shifted from equilibrium towards sublimation.

  17. Phase and gain control of GaAs MMIC transmit-receive modules by optical means

    NASA Astrophysics Data System (ADS)

    Herczfeld, P. R.; Daryoush, A.; Jemison, W.; Rosen, Arye; Paolella, A.

    The authors report on the optical phase and gain control of GaAs microwave monolithic integrated-circuit (MMIC) transmit-receive modules with applications for active phased-array antennas. Phase shifts of 45 degrees were obtained with 50 mW of optical power, and amplifier gain was controlled 15 dB with 250 mW of light intensity. It is concluded that this approach can be extended to the millimeter wave range, is compatible with GaAs MMICs, has potential for fast response, is cost effective, and is compatible with parallel optical processing.

  18. Behavior of Cu and Zn Impurities on GaAs Wafer Surfaces

    NASA Astrophysics Data System (ADS)

    Shibaya, Hiroshi

    1995-08-01

    Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.

  19. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

    SciTech Connect

    Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei; Hijikata, Yasuto; Yaguchi, Hiroyuki; Mochizuki, Toshimitsu; Yoshita, Masahiro; Akiyama, Hidefumi; Kuboya, Shigeyuki; Onabe, Kentaro; Katayama, Ryuji

    2013-12-04

    We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

  20. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S.; Beskin, I.

    2014-05-05

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  1. Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications

    NASA Astrophysics Data System (ADS)

    Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A.

    2010-10-01

    We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ =1300 nm and T=4.2 K.

  2. Direct detection of Tritium and Carbon-14 beta particles with GaAs photodiodes

    NASA Astrophysics Data System (ADS)

    Barnett, A. M.; Lees, J. E.; Bassford, D. J.

    2012-09-01

    New measurements are reported which show beta particles emitted from 3H and 14C sources being directly detected with GaAs mesa photodiodes without use of scintillators. Spectra accumulated with GaAs diodes which were originally developed for X-ray spectroscopy are presented which show that individual beta particles from these sources can be counted and the energy they deposit in the detector measured. Potential longer term applications of this technology as it is developed further and improved include space missions, autoradiography, monitoring tritium produced by fusion reactors and nuclear decommissioning.

  3. Single crystal and polycrystalline GaAs solar cells using AMOS technology

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Yeh, Y. C. M.

    1976-01-01

    A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

  4. Electric field perturbation due to impurities in GaAs through single electron transistor

    NASA Astrophysics Data System (ADS)

    Abdalla, S.

    2009-11-01

    The present work shows the presence of inevitable impurities in the semi-insulating GaAs domains when one is developing a single electron transistor (SET) and alters the quantization mechanism of single electron tunneling through the island. It is also indicated that these impurities decrease the amount of energy required to change the number of electrons on the island, which leads to a drastic reduction of SET quality. A theoretical model has been presented for elucidating the I- V characteristics of GaAs nano-crystals. It is found that this proposed model fits well the experimental data.

  5. Observation of the DX center in Pb-doped GaAs

    NASA Astrophysics Data System (ADS)

    Willke, U.; Maude, D. K.; Sallese, J. M.; Fille, M. L.; el Jani, B.; Gibart, P.; Portal, J. C.

    1993-06-01

    Pb in GaAs introduces a DX center-like (metastable) defect level that is (229±16) meV above the Γ-conduction-band edge, in a similar energetic position to the Si and Sn related DX centers in GaAs. The persistent photoconductivity effect quenches at approximately 50 K, indicating that the barrier to capture for the Pb and Sn dopants are similar. Despite the quite different atomic parameters of the Pb atom compared with the Sn atom, no significant chemical shifts have been found.

  6. Resonant behaviour of GaAs LO phonons in a GaAs-AlAs superlattice

    NASA Astrophysics Data System (ADS)

    Zhang, Shulin; T, A. Gant; M, Delaney; M, V. Klein; J, Klem; H, Morkoc

    1988-03-01

    Resonant Raman scattering from GaAs LO phonons in a 59Å GaAs/20Å AlAs superlattice was studied. The relevant intersubband energies were determined. The results suggest that all of the exciton transitions from the hole subbands HH1, LH1, HH2, HH3, LH2 and HH4 to the electron subbands CB1 and CB2 in the energy region covered by our incident dye laser were observed and a justificative analysis may involve effects due to valence band mixing and to 3D electronic miniband structure.

  7. A comparison of GaAs and Si hybrid solar power systems

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Roberts, A. S., Jr.

    1976-01-01

    An analytical comparison of energy output from various silicon and gallium arsenide hybrid solar power systems, producing electric power and also thermal power for heating or cooling, is made. System performance indices in terms of capital cost, peak power, total power output, and electric power were evaluated. Limiting values for annual energy production from GaAs and Si solar concentrator systems were estimated to be 2 cents and 6.8 cents per kWh for GaAs concentrator systems and between 2.5 cents and 11 cents per kWh for Si concentrator systems.

  8. Schottky barrier measurements on individual GaAs nanowires by X-ray photoemission microscopy

    NASA Astrophysics Data System (ADS)

    di Mario, Lorenzo; Turchini, Stefano; Zamborlini, Giovanni; Feyer, Vitaly; Tian, Lin; Schneider, Claus M.; Rubini, Silvia; Martelli, Faustino

    2016-11-01

    We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.

  9. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  10. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  11. Ferroelectric Pb(Zr,Ti)O{sub 3} epitaxial layers on GaAs

    SciTech Connect

    Louahadj, L.; Le Bourdais, D.; Agnus, G.; Pillard, V.; Lecoeur, P.; Largeau, L.; Mazet, L.; Bachelet, R.; Regreny, P.; Dubourdieu, C.; Gautier, B.; Saint-Girons, G.; Albertini, D.

    2013-11-18

    Ferroelectric epitaxial Pb(Zr,Ti)O{sub 3} (PZT) layers were grown by pulsed laser deposition on SrTiO{sub 3}/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO{sub 3}/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c-domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

  12. 6 to 18 GHz GaAs FET/MMIC amplifiers provide 1 W saturated output

    NASA Astrophysics Data System (ADS)

    Bybokas, Jim

    1987-05-01

    The paper describes the construction and performance characteristics of three amplifiers that combine GaAs FETs, GaAs MMICs, and thin-film hybrid construction and can provide more than 1 W of saturated output power over the 6 to 18 GHz frequency range. These amplifiers feature minimum gains of 26, 34, and 42 dB and noise figures of 13, 10, and 9 dB, respectively, and are specified for operation over the 0 to +50 C temperature range. Amplifier block diagram is included.

  13. 64-Gbit/s GaAs integrated DANE receiver/laser driver

    NASA Astrophysics Data System (ADS)

    Chang, Wei-Heng; Mu, Jinghui; Heins, Mitchell D.; Feng, Milton; Kim, Jongwoo; McCallum, David S.; Stone, Richard V.; Guilfoyle, Peter S.

    1997-04-01

    Optical interconnects provide wide bandwidth, lowloss, and high fanout as compared to those for traditional electrical interconnects. In the past years many high performance optoelectronic circuits have been demonstrated. However, most of them require complicated process and exotic devices. To make optical interconnects in real system and commercial use, circuits utilizing manufacturable, robust, and low-cost technology have to be realized. Ion implanted GaAs MESFETs provide great promise due to their simplicity in manufacturing and their high speed performance. The optical characteristics of GaAs materials also make this technology favorable in realizing low-cost, high-performance OEICs.

  14. The LDA+U calculation of electronic band structure of GaAs

    NASA Astrophysics Data System (ADS)

    Bahuguna, B. P.; Sharma, R. O.; Saini, L. K.

    2016-05-01

    We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.

  15. Dual-loss modulated Nd:GGG laser with Cr4+:YAG and GaAs

    NASA Astrophysics Data System (ADS)

    Qiao, Junpeng; Zhao, Jia; Li, Yufei; Zhao, Shengzhi; Yang, Kejian; Li, Guiqiu; Li, Dechun; Qiao, Wenchao; Li, Tao; Chu, Hongwei

    2014-12-01

    We demonstrate a diode-pumped dual-loss passively Q-switched and mode-locked (DP-QML) Nd:GGG laser by simultaneously employing Cr4+:YAG and GaAs as saturable absorbers. In comparison with single passively Q-switched and mode-locked (SP-QML) Nd:GGG laser with the Cr4+:YAG or GaAs, the maximum pulse width compression and the highest peak power improvement are 76.8% and 18.5 times in DP-QML laser, with the value of 67 ns and 2.9 kW, respectively.

  16. Ferromagnetic GaMnAs grown on (110) faced GaAs

    SciTech Connect

    Wurstbauer, Ursula; Sperl, Matthias; Soda, Marcello; Neumaier, Daniel; Schuh, Dieter; Bayreuther, Guenther; Zweck, Josef; Wegscheider, Werner

    2008-03-10

    Thin Ga{sub 0.94}Mn{sub 0.06}As layers have been grown by low temperature molecular beam epitaxy on (110) GaAs substrates and on [110] and [-110] oriented GaAs cleaved edges. The Curie temperatures T{sub C} for the as-grown samples ranges from 46 to 80 K. After annealing at low temperatures T{sub C} increases up to 115 K. In addition, magnetic anisotropies determined by superconducting quantum interference device magnetometry and magnetotransport measurements are reported.

  17. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Abere, Michael J.; Torralva, Ben; Yalisove, Steven M.

    2016-04-01

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350-400 nm tall and ˜90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  18. Modeling the effect of deep impurity ionization on GaAs photoconductive switches

    SciTech Connect

    Yee, J.H.; Khanaka, G.H.; Druce, R.L.; Pocha, M.D.

    1992-01-01

    The ionization coefficient of deep traps in GaAs is determined from a gas breakdown model together with the recent experimental data obtained at LLNL (Lawrence Livermore National Laboratory) and Boeing. Using this coefficient in our nonlinear device transport code, we have investigated theoretically the nonlinear switching phenomena in GaAs devices. The results obtained from our investigations show that if we take into consideration the effect of the field ionization of the deep traps, we can show how the Lock-On'' phenomena could occur in the device.

  19. InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

    SciTech Connect

    Lee, J. H.; Wang, Zh. M.; Strom, N. W.; Mazur, Yu. I.; Salamo, G. J.

    2006-11-13

    Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

  20. Magnetic and chemical aspects of Cr-based films grown on GaAs(001)

    NASA Astrophysics Data System (ADS)

    Mosca, D. H.; de Camargo, P. C.; Guimarães, J. L.; Schreiner, W. H.; de Oliveira, A. J. A.; Souza, P. E. N.; Eddrief, M.; Etgens, V. H.

    2005-11-01

    We have investigated the magnetic and chemical properties of very thin films of Cr, CrAs, and arsenized Cr, grown by molecular beam epitaxy on GaAs (001), using x-ray photoemission spectroscopy and SQUID magnetometry. The substrate was kept at 200 °C in an As-rich environment for incoming Cr atoms at the GaAs surface. Gallium segregation and the chemical reactivity between Ga and Cr have negligible contribution to the formation of different thin films. A clear ferromagnetic response, even at room temperature, suggests the formation of a very thin buried interfacial layer during the growth process.

  1. Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

    SciTech Connect

    Buckley, Sonia Radulaski, Marina; Vučković, Jelena; Biermann, Klaus

    2013-11-18

    We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

  2. A thermochemical model of radiation damage and annealing applied to GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Conway, E. J.; Walker, G. H.; Heinbockel, J. H.

    1981-01-01

    Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

  3. Arsenic volatilization of GaAs photocathode at low temperature during thermal cleaning

    NASA Astrophysics Data System (ADS)

    Liu, Hui; Shi, Feng; Miao, Zhuang; Gao, Xiang; Cheng, Hong-chang; Niu, Sen; Wang, Long; Chen, Chang

    2014-09-01

    The gallium arsenide (GaAs) photocathode was generally cleaned by radiant heating, direct heating, ion bombardment annealing, and so on. In this paper, the radiant heating method, namely thermal cleaning method, was adopted for GaAs photocathode surface purification. Using this method could obtain an atomic clean surface, ensure the integrity of the GaAs surface lattice, and guarantee the uniformity of surface cleaning effect at the same time. But because the accurate measurement of the GaAs photocathode surface temperature in the vacuum system was very difficult, the residual gas analyzer (RGA) was used in this experiment to monitor the residual gas composition in ultrahigh vacuum during the thermal cleaning process and determine the thermal cleaning temperature by the partial pressure curves of As and Ga. It was found that the first peaks of As and Ga elements both appeared after heating about one hour, accompanied with H2O, N2/CO, CO2 and other common gas. According to partial pressure curves of H2O, N2/CO, CO2 and the heating time, it could be judged that the temperature at that time was not high, which should be under 150°C.After thermal cleaning experiment of three GaAs photocathodes, it was found that the peak value of As partial pressure at low temperature was generally within 10-11mbar~10-10mbar, and the peak value was at 10-10mbar at high temperature. Sometimes it was appeared that the peak value of As partial pressure at low temperature was even higher than the peak value at high temperature. The As volatilization phenomenon occurred at low temperature indicated that the elemental As exist on the GaAs photocathode surface or near surface after the chemical etching process, and the As could volatilize from GaAs photocathode at low temperature in the beginning of thermal cleaning. This research has guiding significance for further understanding the thermal cleaning mechanism of GaAs photocathode and improving the thermal cleaning technology.

  4. Low-temperature-grown GaAs enhanced wet thermal oxidation of Al0.98Ga0.02As

    NASA Astrophysics Data System (ADS)

    Reese, H.; Chiu, Y. J.; Hu, E.

    1998-11-01

    The effects of incorporating low-temperature-grown GaAs (LT GaAs) into the layer structure of Al0.98Ga0.02As/GaAs are studied. Results show that the structures containing a 300 nm layer of LT GaAs have faster oxidation rates and lower oxidation temperatures compared to reference samples without the LT GaAs layer. This letter will discuss the mechanisms involved in the oxidation rate increase, attributed to the LT GaAs enhancing the transport of As species during the oxidation process.

  5. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    PubMed

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

  6. Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber.

    PubMed

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-06-16

    A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers. PMID:24977576

  7. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  8. Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

    PubMed

    Tani, M; Matsuura, S; Sakai, K; Nakashima, S

    1997-10-20

    Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers. PMID:18264312

  9. First-principles predictions of electronic properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based heterojunctions

    NASA Astrophysics Data System (ADS)

    Luo, Guangfu; Forghani, Kamran; Kuech, Thomas F.; Morgan, Dane

    2016-09-01

    Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and therefore alleviate the efficiency droop. Using density functional theory, we studied a newly fabricated quaternary alloy, GaAs1-x-yPyBix, which can host significant amounts of Bi, through calculations of its band gap, spin-orbit splitting, and band offsets with GaAs. We found that the band gap changes of GaAs1-x-yPyBix relative to GaAs are determined mainly by the local structural changes around P and Bi atoms rather than their electronic structure differences. To obtain alloy with lower Auger recombination than GaAs bulk, we identified the necessary constraints on the compositions of P and Bi. Finally, we demonstrated that GaAs/GaAs1-x-yPyBix heterojunctions with potentially low Auger recombination can exhibit small lattice mismatch and large enough band offsets for strong carrier confinement. This work shows that the electronic properties of GaAs1-x-yPyBix are potentially suitable for high-power infrared light-emitting diodes and laser diodes with improved efficiency.

  10. Fabrication and characterization of GaAs/A1GaAs quantum-well lasers using thermally oxidized A1GaAs

    NASA Astrophysics Data System (ADS)

    Homan, Otte J.; Epler, John E.; Patterson, Bruce D.; Lehmann, Hans W.

    1994-07-01

    Aluminum-oxide thermally grown into high Al-concentration AlxGa1-xAs layers has recently been studied extensively. The material shows electrical and optical properties that make it useful in a semiconductor laser fabrication process where it can provide electrical isolation and optical guiding, as well as simplify the fabrication and integration process considerably. We use this thermal oxide to produce GaAs/AlGaAs semiconductor lasers that can be integrated with other devices. The GaAs cap- layer is masked with photoresist and the exposed GaAs areas are etched away, leaving a GaAs oxidation mask on the AlGaAs upper cladding layer. Using N2 carrier gas saturated with H2O vapor, the uncovered Al0.8Ga0.2As material is converted into a stable aluminum-oxide at temperatures around 450 degree(s)C. Due to the near-isotropic oxidation an `ellipsoidal' diffusion front is created, which is in strong contrast to the well-known mesa cross-section in conventional dry-etched ridge-waveguides but is more similar to e.g. wet-etched buried heterostruture lasers.

  11. Origin and enhancement of the 1.3 μm luminescence from GaAs treated by ion-implantation and flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Gao, Kun; Prucnal, S.; Skorupa, W.; Helm, M.; Zhou, Shengqiang

    2013-09-01

    GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, and 1.55 μm which are transmission windows of optical fibers. In this paper, we present the photoluminescence at 1.30 μm from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 μm emission is from transitions between the VAs-donor and X-acceptor pairs.

  12. Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  13. Indium-doped GaAs: Investigation of deep traps

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Wolter, K.; Roentgen, P.; Seibert, K.; Kurz, H.; Camassel, J.

    1989-03-01

    The effect of indium incorporation on the concentration of deep traps in a series of GaAs epitaxial layers has been investigated by performing quantitative photoluminescence (PL) and capacitance [deep-level transient spectroscopy (DLTS)] spectroscopic studies. All samples were epitaxial layers of n-type GaAs:In, grown by organometallic vapor-phase epitaxy (OMVPE) on liquid-encapsulated Czochralski (LEC) -grown GaAs:Cr substrates. The calibrated indium concentration ranged between 0 and 6.5×1019 atoms cm-3, which is about 0.3% in alloy composition. We have investigated (i) the bands associated with chromium in both the epitaxial layers and the original substrates; (ii) a large recombination band, associated with an unidentified (D-VGa) complex, at about 1.2 eV; and (iii) the DLTS signal associated with the well-known deep trap EL2. We find the following. First, there is a one-to-one correspondence between the PL intensity associated with Cr2+, at 0.84 eV, and the D-VGa signal at 1.2 eV. This is true for both the epitaxial layers and the original substrates and suggests identification of the unknown donor participating in the D-VGa complex as Cr4+. Second, we find all PL intensities to decrease with increasing indium concentration, while the concentration and depth profile of EL2 are not affected. In contrast to the near-band-edge PL intensity, which increased with increasing indium content, there is a drop by about 1 order of magnitude for all chromium-related features when going from indium-free to about 0.3% indium-rich sample. Moreover, there is a one-to-one correspondence between the increase in the near-band-edge PL intensity and the decrease in the chromium-related signals. This establishes, on a fully experimental basis, the relative roles played by indium and chromium in our epitaxial samples: both compete to incorporate on gallium sites in the strain field of neighboring vacancies but, because of a higher incorporation rate, increasing the indium

  14. Ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage

    NASA Astrophysics Data System (ADS)

    Eisen, F. H.; Bachem, K.; Klausman, E.; Koehler, K.; Haddad, R.

    1992-12-01

    In an effort to attain a better understanding of the nature of the defects introduced in GaAs by irradiating it with energetic light ions; electron or proton irradiated n-type GaAs samples, cut from the same layer grown by molecular-beam epitaxy, have been studied by deep level transient spectroscopy. By comparing the spectra, including the effects of high electric fields, and by using results for annealed samples, it is possible to determine which of the traps reported in electron irradiated GaAs, most of which are believed to be arsenic interstitial-vacancy pairs, are present in the proton irradiated material. The traps identified in proton irradiated GaAs include most of those found in electron irradiated material, either after irradiation or after irradiation and annealing. The results indicate that two of these traps are associated with defects which are more complex than simple interstitial-vacancy pairs. Two traps were found in proton irradiated material which have not been observed in electron irradiated GaAs. One of these is nearly as abundant as the prominent E3 center observed in electron irradiated GaAs and is probably also not a simple pair. The deep level transient spectroscopy peak for this trap is not clearly separated from that of E3 in proton irradiated GaAs. The other trap is probably associated with a particular impurity present in the MBE grown sample layers.

  15. SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

    NASA Astrophysics Data System (ADS)

    Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

    2010-03-01

    A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

  16. Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate

    SciTech Connect

    Alekseev, P. A. Dunaevskii, M. S.; Stovpyaga, A. V.; Lepsa, M.; Titkov, A. N.

    2012-05-15

    A convenient and fast method for measuring Young's modulus of semiconductor nanowires obliquely standing on the growth substrate is presented. In this method, the nanowire is elastically bent under the force exerted by the probe of an atomic-force microscope, and the load-unload dependences for the bending of the probe cantilever are recorded. Next, these curves are used to find the bending stiffness of the tilted nanowires, after which, taking into account the nanowire dimensions, Young's modulus is obtained. The implementation of this method is demonstrated for tilted GaAs nanowires growing on a GaAs (111) substrate. Young's modulus is determined by applying finite-element analysis to the problem of the stationary elastic bending of a nanowire taking into account the actual nanowire shape and faceting. It proves that a fairly accurate estimate of Young's modulus can be obtained even if the nanowire shape is approximated by a circular cylinder with a single cross-sectional area. The values of Young's modulus obtained for GaAs nanowires of cubic lattice symmetry are 2 to 3 times smaller than its value for bulk GaAs. This difference is attributed to the presence of stacking faults in the central part of the nanowires.

  17. A study on the photoresponses in GaAs n-channel optical detectors

    NASA Astrophysics Data System (ADS)

    Wei, C. J.; Klein, H.-J.; Beneking, H.

    1982-09-01

    The behavior of photocarriers in a GaAs planar n-channel device as an optical detector is studied. Computer simulations show that space charges of those photogenerated carriers give rise to a high-gain and high-speed amplification mechanism which results in Gunn oscillations at intense irradiations. Experiments have confirmed these oscillations. The observed results agree with theoretical computations.

  18. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  19. Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs

    NASA Astrophysics Data System (ADS)

    Sato, Kenji; Ikoma, Hideaki

    1993-02-01

    Internal photoemission and X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the effect of sulfur passivation on the GaAs surface and the degradation of the GaAs surface exposed to air ambient after the passivation. The reverse bias dependence of the Schottky barrier height was very small in the as-sulfur-treated sample and was mainly explained by the image force lowering effect. However, it increased as this sample was exposed to air, indicating an increase in the interface state density. The XPS studies showed that both the Ga and As oxides were hardly observed in the sulfur-passivated samples. This indicates that sulfur passivation strongly suppresses oxidation of GaAs. However, a small amount of elemental arsenic was observed with a trace of the As suboxides (such as AsO) after exposure to air and it increased as the exposure time was increased. These results were probably correlated with the increase in the bias dependence of the Schottky barrier height in samples exposed to air after the passivation. Thermal oxidation of GaAs was found to be retarded by sulfur passivation until oxidation time was about 10 min at 300°C. A possible model of suppression of oxidation by sulfur passivation was also discussed.

  20. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  1. Langley program of GaAs solar cells. [emphasizing energy conversion efficiency and radiation resistance

    NASA Technical Reports Server (NTRS)

    Conway, E. J.

    1979-01-01

    A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.

  2. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  3. Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs

    NASA Astrophysics Data System (ADS)

    Kim, Taeseok; Pillai, Manoj R.; Aziz, Michael J.; Scarpulla, Michael A.; Dubon, Oscar D.; Yu, Kin M.; Beeman, Jeffrey W.; Ridgway, Mark C.

    2010-07-01

    In order to further understand the pulsed-laser melting (PLM) of Mn and N implanted GaAs, which we have used to synthesize thin films of the ferromagnetic semiconductor Ga1-xMnxAs and the highly mismatched alloy GaNxAs1-x, we have simulated PLM of amorphous (a-) and crystalline (c-) GaAs. We present a numerical solution to the one-dimensional heat equation, accounting for phase-dependent reflectivity, optical skin depth, and latent heat, and a temperature-dependent thermal conductivity and specific heat. By comparing the simulations with experimental time-resolved reflectivity and melt depth versus laser fluence, we identify a set of thermophysical and optical properties for the crystalline, amorphous, and liquid phases of GaAs that give reasonable agreement between experiment and simulation. This work resulted in the estimation of thermal conductivity, melting temperature and latent heat of fusion of a-GaAs of 0.008 W/cm K at 300 K, 1350 K, and 2650 J/cm3, respectively. These materials properties also allow the prediction of the solidification velocity of crystalline and ion-amorphized GaAs.

  4. Generation of terahertz radiation in ordered arrays of GaAs nanowires

    SciTech Connect

    Trukhin, V. N.; Mustafin, I. A.; Bouravleuv, A. D.; Cirlin, G. E.; Kakko, J. P.; Huhtio, T.; Lipsanen, H.

    2015-06-22

    THz generation under excitation by ultrashort optical pulses in ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz radiation generation increases due to the resonant leaky mode excitation in nanowires. The maximum value of the THz field is achieved when the distance between the nanowires is of the order of the wavelength of exciting light.

  5. On the cascade capture of electrons at donors in GaAs quantum wells

    SciTech Connect

    Aleshkin, V. Ya.

    2015-09-15

    The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

  6. Micro structuration of gaas surface by wet etching: towards a specific surface behavior.

    PubMed

    Bienaime, Alex; Elie-Caille, Celine; Leblois, Therese

    2012-08-01

    Resonant microelectromechanical systems are promising devices for real time and highly sensitive measurements. The sensitivity of such sensors to additional mass loadings which can be increased thanks to the miniaturisation of devices is of prime importance for biological applications. The miniaturisation of structures passes through a photolithographic process and wet chemical etching. So, this paper presents new results on the anisotropic chemical etching of the gallium arsenide (GaAs) crystal used for this application, in several solutions. This paper focuses on the micro/nanostructuration of the sensing surface to increase the sensor sensitivity. Indeed, this active surface will be biofunctionalized to operate in biological liquid media in view of biomolecules detection. Several experimental conditions of etching bath composition, concentration and temperature were examined to obtain a large variety of geometrical surfaces topographies and roughness. According to the orientation dependence of the chemical etching process, the experiments were also performed on various GaAs crystal plates. The bath 1 H3PO4:9 H2O2:1 H2O appeared to be particularly adapted to the fabrication of the GaAs microstructured membrane: indeed, the bath is highly stable, anisotropic, and, as a function of temperature, it allows the production of a large variety of GaAs surface topographies.

  7. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  8. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  9. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    PubMed

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  10. Study on Nonlinear Absorption Effect of Nanosecond Pulse Laser Irradiation for GaAs.

    PubMed

    Sun, Wenjun; Liu, Zhongyang; Zhou, Haijiao

    2016-04-01

    In order to research nonlinear absorption effect of pulse laser irradiation for GaAs, a physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The thermal effects of semiconductor material GaAs was analyzed under irradiation of nanosecond pulse laser with wavelength of 1064 nm. The radial and transverse temperature distribution of semiconductor material GaAs was calculated under irradiation of nanosecond pulse laser with different power density by solving the thermal conduction equations. The contribution of one-photon absorption, two-photon absorption and free carrier absorption to temperature of GaAs material were discussed. The results show that when the pulse laser power density rises to 10(10) W/cm2, free carrier absorption played a leading role and it was more than that of one-photon absorption of material. The temperature contribution of two-photon absorption and free carrier absorption could be ignored at laser power density lower than 10(8) W/cm2. The result is basically consistent with relevant experiments, which shows that physical model constructed is valid. PMID:27451733

  11. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    SciTech Connect

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  12. Study on Nonlinear Absorption Effect of Nanosecond Pulse Laser Irradiation for GaAs.

    PubMed

    Sun, Wenjun; Liu, Zhongyang; Zhou, Haijiao

    2016-04-01

    In order to research nonlinear absorption effect of pulse laser irradiation for GaAs, a physical model of Gaussian distribution pulse laser irradiation for semiconductor material was established by software COMSOL Multiphysics. The thermal effects of semiconductor material GaAs was analyzed under irradiation of nanosecond pulse laser with wavelength of 1064 nm. The radial and transverse temperature distribution of semiconductor material GaAs was calculated under irradiation of nanosecond pulse laser with different power density by solving the thermal conduction equations. The contribution of one-photon absorption, two-photon absorption and free carrier absorption to temperature of GaAs material were discussed. The results show that when the pulse laser power density rises to 10(10) W/cm2, free carrier absorption played a leading role and it was more than that of one-photon absorption of material. The temperature contribution of two-photon absorption and free carrier absorption could be ignored at laser power density lower than 10(8) W/cm2. The result is basically consistent with relevant experiments, which shows that physical model constructed is valid.

  13. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A.; Zvonkov, B. N.; Kudryavtsev, K. E.; Nekorkin, S. M.

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  14. Modified energetics and growth kinetics on H-terminated GaAs (110)

    SciTech Connect

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

    2013-10-28

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  15. DFT algorithms for bit-serial GaAs array processor architectures

    NASA Technical Reports Server (NTRS)

    Mcmillan, Gary B.

    1988-01-01

    Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

  16. SEU of complementary GaAs static RAMs due to heavy ions

    NASA Technical Reports Server (NTRS)

    Zuleeg, R.; Notthoff, J. K.; Nichols, D. K.

    1984-01-01

    The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.

  17. Hot photoluminescence and valence band warping in GaAs and InP crytals

    NASA Astrophysics Data System (ADS)

    Alekseev, M. A.; Karlik, I. Ya.; Merkulov, I. A.; Mirlin, D. N.; Sapega, V. F.

    1988-03-01

    The investigations of hot photoluminescence are shown to be a powerful technique for determination of band parameters (Luttinger parameters) of A 3B 5 compounds. The experiment and calculations are carried out for GaAs and InP crystals.

  18. Reuse of GaAs substrates for epitaxial lift-off by employing protection layers

    NASA Astrophysics Data System (ADS)

    Lee, Kyusang; Zimmerman, Jeramy D.; Xiao, Xin; Sun, Kai; Forrest, Stephen R.

    2012-02-01

    We demonstrate repeated use of GaAs wafers for multiple growths by employing lattice-matched epitaxial protection layers to preserve the wafer surface in its original condition following their etch removal after growth. The protection layers provide a regrowth surface that eliminates the need for repolishing prior to subsequent growth. Between growths, the protection layers are removed by wet chemical etching. The resulting surface quality is examined using atomic force microscope and energy dispersive spectrometry. We show that the surface roughness, chemical composition, morphology, and electronic properties of the GaAs surface after protection-layer removal are comparable to that of the original substrate surface. We show that p-n junction GaAs solar cells grown on original and reused wafers have nearly identical performance with power conversion efficiencies of ˜23%, under simulated 1 sun illumination, AM1.5 G. The high power conversion efficiency of GaAs solar cells combined with reduced costs associated with multiple parent wafer reuses promise cost competitiveness with incumbent solar cell technologies.

  19. Thermal oxidation of In/sub 2/S/sub 3//GaAs structures

    SciTech Connect

    Mittova, Ya.; Pukhova, V.V.

    1986-11-01

    The purpose of this work is to investigate the effect of indium sulfide, deposited on the surface of GaAs, on the process of oxidation of gallium arsenide, as well as on the composition and some properties of the oxide layers formed.

  20. A comparison of GaAs and Si hybrid solar power systems

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Roberts, A. S., Jr.

    1977-01-01

    Five different hybrid solar power systems using silicon solar cells to produce thermal and electric power are modeled and compared with a hybrid system using a GaAs cell. Among the indices determined are capital cost per unit electric power plus mechanical power, annual cost per unit electric energy, and annual cost per unit electric plus mechanical work. Current costs are taken to be $35,000/sq m for GaAs cells with an efficiency of 15% and $1000/sq m for Si cells with an efficiency of 10%. It is shown that hybrid systems can be competitive with existing methods of practical energy conversion. Limiting values for annual costs of Si and GaAs cells are calculated to be 10.3 cents/kWh and 6.8 cents/kWh, respectively. Results for both systems indicate that for a given flow rate there is an optimal operating condition for minimum cost photovoltaic output. For Si cell costs of $50/sq m optimal performance can be achieved at concentrations of about 10; for GaAs cells costing 1000/sq m, optimal performance can be obtained at concentrations of around 100. High concentration hybrid systems offer a distinct cost advantage over flat systems.

  1. Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

    NASA Astrophysics Data System (ADS)

    Fauzi, D. Ahmad; Rashid, N. K. A. Md; Karim, J. Abdul; Zin, M. R. Mohamed; Hasbullah, N. F.; Sheik Fareed, O. A.

    2013-12-01

    This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-voltage (C-V) measurements using Keithley 4200 SCS. Two different commercial optoelectronics diodes; GaN on SiC light emitting diode (LED) and GaAs infrared emitting diode (IRED) were radiated with neutron using pneumatic transfer system (PTS) in the PUSPATI TRIGA Mark II research reactor under total neutron flux of 1×1012 neutron/cm2.s. Following the neutron exposure for 1, 3 and 5 minutes, the I-V forward bias and reverse bias leakage current increase for GaAs IREDs, but minimal changes were observed in the GaN LEDs. The C-V measurements revealed that the capacitance and carrier concentration of GaAs IREDs decrease with increasing radiation flux.

  2. Supplementation with Guanidinoacetic Acid in Women with Chronic Fatigue Syndrome.

    PubMed

    Ostojic, Sergej M; Stojanovic, Marko; Drid, Patrik; Hoffman, Jay R; Sekulic, Damir; Zenic, Natasa

    2016-01-29

    A variety of dietary interventions has been used in the management of chronic fatigue syndrome (CFS), yet no therapeutic modality has demonstrated conclusive positive results in terms of effectiveness. The main aim of this study was to evaluate the effects of orally administered guanidinoacetic acid (GAA) on multidimensional fatigue inventory (MFI), musculoskeletal soreness, health-related quality of life, exercise performance, screening laboratory studies, and the occurrence of adverse events in women with CFS. Twenty-one women (age 39.3 ± 8.8 years, weight 62.8 ± 8.5 kg, height 169.5 ± 5.8 cm) who fulfilled the 1994 Centers for Disease Control and Prevention criteria for CFS were randomized in a double-blind, cross-over design, from 1 September 2014 through 31 May 2015, to receive either GAA (2.4 grams per day) or placebo (cellulose) by oral administration for three months, with a two-month wash-out period. No effects of intervention were found for the primary efficacy outcome (MFI score for general fatigue), and musculoskeletal pain at rest and during activity. After three months of intervention, participants receiving GAA significantly increased muscular creatine levels compared with the placebo group (36.3% vs. 2.4%; p < 0.01). Furthermore, changes from baseline in muscular strength and aerobic power were significantly greater in the GAA group compared with placebo (p < 0.05). Results from this study indicated that supplemental GAA can positively affect creatine metabolism and work capacity in women with CFS, yet GAA had no effect on main clinical outcomes, such as general fatigue and musculoskeletal soreness.

  3. Supplementation with Guanidinoacetic Acid in Women with Chronic Fatigue Syndrome

    PubMed Central

    Ostojic, Sergej M.; Stojanovic, Marko; Drid, Patrik; Hoffman, Jay R.; Sekulic, Damir; Zenic, Natasa

    2016-01-01

    A variety of dietary interventions has been used in the management of chronic fatigue syndrome (CFS), yet no therapeutic modality has demonstrated conclusive positive results in terms of effectiveness. The main aim of this study was to evaluate the effects of orally administered guanidinoacetic acid (GAA) on multidimensional fatigue inventory (MFI), musculoskeletal soreness, health-related quality of life, exercise performance, screening laboratory studies, and the occurrence of adverse events in women with CFS. Twenty-one women (age 39.3 ± 8.8 years, weight 62.8 ± 8.5 kg, height 169.5 ± 5.8 cm) who fulfilled the 1994 Centers for Disease Control and Prevention criteria for CFS were randomized in a double-blind, cross-over design, from 1 September 2014 through 31 May 2015, to receive either GAA (2.4 grams per day) or placebo (cellulose) by oral administration for three months, with a two-month wash-out period. No effects of intervention were found for the primary efficacy outcome (MFI score for general fatigue), and musculoskeletal pain at rest and during activity. After three months of intervention, participants receiving GAA significantly increased muscular creatine levels compared with the placebo group (36.3% vs. 2.4%; p < 0.01). Furthermore, changes from baseline in muscular strength and aerobic power were significantly greater in the GAA group compared with placebo (p < 0.05). Results from this study indicated that supplemental GAA can positively affect creatine metabolism and work capacity in women with CFS, yet GAA had no effect on main clinical outcomes, such as general fatigue and musculoskeletal soreness. PMID:26840330

  4. Supplementation with Guanidinoacetic Acid in Women with Chronic Fatigue Syndrome.

    PubMed

    Ostojic, Sergej M; Stojanovic, Marko; Drid, Patrik; Hoffman, Jay R; Sekulic, Damir; Zenic, Natasa

    2016-02-01

    A variety of dietary interventions has been used in the management of chronic fatigue syndrome (CFS), yet no therapeutic modality has demonstrated conclusive positive results in terms of effectiveness. The main aim of this study was to evaluate the effects of orally administered guanidinoacetic acid (GAA) on multidimensional fatigue inventory (MFI), musculoskeletal soreness, health-related quality of life, exercise performance, screening laboratory studies, and the occurrence of adverse events in women with CFS. Twenty-one women (age 39.3 ± 8.8 years, weight 62.8 ± 8.5 kg, height 169.5 ± 5.8 cm) who fulfilled the 1994 Centers for Disease Control and Prevention criteria for CFS were randomized in a double-blind, cross-over design, from 1 September 2014 through 31 May 2015, to receive either GAA (2.4 grams per day) or placebo (cellulose) by oral administration for three months, with a two-month wash-out period. No effects of intervention were found for the primary efficacy outcome (MFI score for general fatigue), and musculoskeletal pain at rest and during activity. After three months of intervention, participants receiving GAA significantly increased muscular creatine levels compared with the placebo group (36.3% vs. 2.4%; p < 0.01). Furthermore, changes from baseline in muscular strength and aerobic power were significantly greater in the GAA group compared with placebo (p < 0.05). Results from this study indicated that supplemental GAA can positively affect creatine metabolism and work capacity in women with CFS, yet GAA had no effect on main clinical outcomes, such as general fatigue and musculoskeletal soreness. PMID:26840330

  5. CHINESE HAMSTER OVARY CELL-DERIVED RECOMBINANT HUMAN ACID α-GLUCOSIDASE IN INFANTILE-ONSET POMPE DISEASE

    PubMed Central

    Kishnani, Priya Sunil; Nicolino, Marc; Voit, Thomas; Rogers, R. Curtis; Tsai, Anne Chun-Hui; Waterson, John; Herman, Gail E.; Amalfitano, Andreas; Thurberg, Beth L.; Richards, Susan; Davison, Mark; Corzo, Deyanira; Chen, YT

    2009-01-01

    Objective To conduct an open-label, multinational, multicenter study examining the safety and efficacy of recombinant human acid α-glucosidase (rhGAA) in treatment of infantile-onset Pompe disease. Study design We enrolled 8 infant patients who had Pompe disease with GAA activity <1% of normal, cardiomyopathy, and hypotonia. In the 52-week initial phase, rhGAA was infused intravenously at 10 mg/kg weekly; an extension phase continued survivors’ treatment with 10 to 20 mg/kg of rhGAA weekly or 20 mg/kg every 2 weeks for as long as 153 weeks. Safety measurements included adverse events, laboratory tests, and anti-rhGAA antibody titers. Efficacy evaluations included survival, ventilator use, echo-cardiograms, growth, and motor and cognitive function. Result After 52 weeks of treatment, 6 of 8 patients were alive, and 5 patients were free of invasive ventilator support. Clinical improvements included ameliorated cardiomyopathy and improved growth and cognition. Five patients acquired new motor milestones; 3 patients walked independently. Four patients died after the initial study phase; the median age at death or treatment withdrawal for all patients was 21.7 months, significantly later than expected for patients who were not treated. Treatment was safe and well tolerated; no death was drug-related. Conclusion rhGAA improved ventilator-free survival, cardiomyopathy, growth, and motor function in patients with infantile-onset Pompe disease compared with outcomes expected for patients without treatment. PMID:16860134

  6. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  7. Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach

    NASA Astrophysics Data System (ADS)

    Korb, J.; Flade, T.; Jurisch, M.; Köhler, A.; Reinhold, Th; Weinert, B.

    1999-03-01

    The ChemSage code [Eriksson and Hack, Metall. Trans. B 12 (1990) 1013] to minimize the total Gibbs free energy was used to calculate phase equilibria in the complex thermochemical system representing LEC GaAs crystal growth which comprises the growth atmosphere, the liquid boron oxide, the GaAs melt and solid phases including the GaAs crystal. The behaviour of C, B, O, N and H in the crystal growth melt at 1509.42 K is investigated in dependence on relevant technological parameters.

  8. Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

    SciTech Connect

    Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano; Frigeri, Cesare; Falub, Claudiu V.; Känel, Hans von

    2013-12-23

    Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

  9. A search for spin-polarized photoemission from GaAs using light with orbital angular momentum

    SciTech Connect

    Nathan Clayburn, James McCarter, Joan Dreiling, Bernard Poelker, Dominic Ryan, Timothy Gay

    2013-01-01

    Laser light with photon energy near the bandgap of GaAs and with different amounts of orbital angular momentum was used to produce photoemission from unstrained GaAs. The degree of electron spin polarization was measured using a micro-Mott polarimeter and found to be consistent with zero with an upper limit of ~3% for light with up to ±5{bar h} of orbital angular momentum. In contrast, the degree of spin polarization was 32.32 ± 1.35% using circularly-polarized laser light at the same wavelength, which is typical of bulk GaAs.

  10. The reverse mode of the photo activated charge domain in high field biased semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Qu, Guanghui; Shi, Wei

    2013-02-01

    The nonlinear accumulation of the photogenerated electrons in high field biased SI-GaAs has been defined as photo activated charge domain (PACD). The transient transport dynamics of the PACD is investigated. The result shows that the PACD, working as a reverse gun dipole domain when biased electric field much higher than 4 kV/cm, and the reverse mode of the PACD could dominate the electric field shielding by its main electric field ultrafast and exponential rising against the bias field. Such mechanisms could play an important role in GaAs THz antenna, GaAs photoconductive semiconductor switch, and the other ultrafast GaAs devices.

  11. XPS investigation on vacuum thermal desorption of UV/ozone treated GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Cossu, G.; Ingo, G. M.; Mattogno, G.; Padeletti, G.; Proietti, G. M.

    In order to prepare suitable surfaces for molecular beam epitaxy (MBE), sacrificial thin oxide layers on HCl etched GaAs(100) surfaces were grown by both air and UV/ozone exposure. Passive films were subsequently removed by vacuum thermal desorption to achieve surfaces that were smooth and clean on an atomic scale. The evolution of the surface chemical composition, as a function of vacuum desorption temperature, has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS results have evidenced for air and UV/ozone exposed GaAs(100) surfaces a relationship between desorption temperature and surface chemical composition; indeed, the oxide removal is temperature dependent and sequentially selective as follows: As 2O 3. AsO and Ga 2O 3. Furthermore, XPS results have shown that air-grown films have a chemical composition and thermal desorption behaviour different from UV/ozone treated materials. Indeed, these latter have an As 2O 3/Ga 2O 3 and an unoxidized As/Ga ratio close to unity for as grown and thermal treated at 580°C surfaces, respectively. By contrast, air-exposed GaAs(100) materials are Ga 2O 3-enriched and after vacuum thermal desorption treatments have never a stoichiometric composition(As (GaAs)/Ga (GaAs)= 1). Furthermore UV/ozone treated GaAs(100) surfaces subjected to a vacuum thermal treatment at 580°C, have a troublesome organic contamination level below XPS detectability, whereas from air-exposed surfaces, carbon is not completely thermally removable

  12. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

    NASA Astrophysics Data System (ADS)

    Spicer, W. E.; Cao, R.; Miyano, K.; Kendelewicz, T.; Lindau, I.; Weber, E.; Liliental-Weber, Z.; Newman, N.

    1989-11-01

    Through the use of synchrotron radiation photoemission spectroscopy (PES) and related techniques, we have gained detailed knowledge of Fermi level pinning, interfacial chemistry and disruption of GaAs for coverages up to several monolayers (ML). A link has been made between these data and that in the thick layer regime (hundreds of ML), which characterizes practical Schottky diodes. PES results for thin layers deposited at room temperature (RT) and low temperatures of about 80 K (LT) as well as thick films deposited at RT and annealed to higher temperatures are considered. At LT where GaAs disruption is minimized for thin films, metal-induced gap states seem to dominate the Fermi level pinning process except where GaAs metal reactions are strong. For RT thin and thick films, the effects of defects must be considered, and the advanced unified defect model (AUDM) is applied. In the AUDM the key defects are identified as the As Ga (double donor with levels at 0.75 and 0.5 eV above the valence band maximum) and the Ga As antisite (double acceptor) with the As Ga normally dominating due to the excess As which characterizes LEC GaAs crystals. The literature is reviewed and a number of phenomena are explained in terms of this model including the Fermi level position on MBE grown GaAs observed by Svensson et al. and the anomolously high Schottky barrier height (SBH) of thick Ga on n-GaAs observed by several groups. By performing electrical, TEM, and chemical studies of thick diodes and by evaluating the changes upon thermal annealing of diodes it is found that the AUDM successfully predicts the increase or decrease of barrier height on annealing.

  13. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    SciTech Connect

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  14. Photo-recovery of electron-irradiated GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, Andrew

    1995-01-01

    The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has produced some unexpected and important results. Two results, independent of the coverslide coatings, are of particular importance in terms of the predictability of GaAs solar-array lifetime in space: ( 1) The GaAs/Ge solar cells used for this series of tests displayed a much higher radiation degradation than that predicted based on JPL Solar Cell Radiation Handbook data. Covered cells degraded more in Isc than did bare cells. Short-term illumination at 60 C did not produce significant recovery (-1%) of the radiation damage. (2) However, electron radiation damage to these GaAs solar celIs anneals at 40 C when exposed to approximately 1 sun AM0 UV light sources for extended periods. The effect appears to be roughly linear with time (-1% of lsc per 1000 UVSH), is large (greater than or equal to 3%), and has not yet saturated (at 3000 hours). This photo-recovery of radiation damage to GaAs solar cells is a new effect and potentially important to the spacecraft community. The figure compares the effects of extended UV on irradiated and unirradiated GaAs solar cells with INTELSAT-6 Si cells. The effect and its generality, the extent of and conditions for photo-recovery, and the implications of such recovery for missions in radiation environments have not yet been determined.

  15. Use of glacial acetic acid to enhance bisexual monitoring of tortricid pests with kairomone lures in pome fruits.

    PubMed

    Knight, A L; Hilton, R; Basoalto, E; Stelinski, L L

    2014-12-01

    Studies were conducted to assess glacial acetic acid (GAA) with various host plant volatiles (HPVs) and the sex pheromone, (E,E)-8, 10-dodecadien-1-ol, of codling moth, Cydia pomonella (L), as lures in traps for tortricid pests that often co-occur in tree fruits in the western United States. In addition to codling moth, field trapping studies were conducted with oriental fruit moth, Grapholita molesta (Busck), obliquebanded leafroller Choristoneura rosaceana (Harris), the leafroller Pandemis pyrusana Kearfott, and the eyespotted budmoth, Spilonota ocellana (Denis and Schiffermüller). HPVs included ethyl (E,Z)-2,4-decadienoate (pear ester), (E)-4,8-dimethyl-1,3,7-nonatriene, butyl hexanoate, (E)-β-ocimene, (E)-β-farnesene, and farnesol. Three types of GAA co-lures differing in a 10-fold range in weekly evaporation rates were tested. The evaporation rate of GAA co-lures was an important factor affecting moth catches. The highest rate tested captured fewer codling moth but more leafrollers and eyespotted budmoth. GAA co-lures caught both sexes of each species. The field life of butyl hexanoate and (E)-β-ocimene lures were much shorter than pear ester or sex pheromone lures. Adding GAA to pear ester or to (E)-β-ocimene significantly increased the catches of only codling moth or oriental fruit moth, respectively. Combining pear ester or (E)-β-ocimene with GAA did not affect the catch of either species compared with the single more attractive HPV. Adding HPVs to GAA did not increase the catches of either leafroller species or eyespotted budmoth. Traps baited with pear ester, sex pheromone, and GAA for monitoring codling moth were also effective in classifying pest pressure of both leafroller species within orchards.

  16. Purification from Fusobacterium mortiferum ATCC 25557 of a 6-phosphoryl-O-alpha-D-glucopyranosyl:6-phosphoglucohydrolase that hydrolyzes maltose 6-phosphate and related phospho-alpha-D-glucosides.

    PubMed Central

    Thompson, J; Gentry-Weeks, C R; Nguyen, N Y; Folk, J E; Robrish, S A

    1995-01-01

    6-Phosphoryl-O-alpha-D-glucopyranosyl:6-phosphoglucohydrolase (6-phospho-alpha-glucosidase) has been purified from Fusobacterium mortiferum ATCC 25557. p-Nitrophenyl-alpha-D-glucopyranoside 6-phosphate (pNP alpha Glc6P) served as the chromogenic substrate for detection and assay of enzyme activity. The O2-sensitive, metal-dependent phospho-alpha-glucosidase was stabilized during purification by inclusion of dithiothreitol and Mn2+ ion in chromatography buffers. Various 6-phosphoryl-O-alpha-linked glucosides, including maltose 6-phosphate, pNP alpha Glc6P, trehalose 6-phosphate, and sucrose 6-phosphate, were hydrolyzed by the enzyme to yield D-glucose 6-phosphate and aglycone moieties in a 1:1 molar ratio. 6-Phospho-alpha-glucosidase (M(r) of approximately 49,000; pI of approximately 4.9) is activated by Fe2+, Mn2+, Co2+, and Ni2+, and the maximum rate of pNP alpha Glc6P hydrolysis occurs at 40 degrees C within the pH range 7.0 to 7.5. The sequence of the first 32 amino acids of 6-phospho-alpha-glucosidase exhibits 67% identity (90% similarity) to that deduced for the N terminus of a putative phospho-beta-glucosidase (designated ORF f212) encoded by glvG in Escherichia coli. Western blots involving highly specific polyclonal antibody against 6-phospho-alpha-glucosidase and spectrophotometric analyses with pNP alpha Glc6P revealed only low levels of the enzyme in glucose-, mannose-, or fructose-grown cells of F. mortiferum. Synthesis of 6-phospho-alpha-glucosidase increased dramatically during growth of the organism on alpha-glucosides, such as maltose, alpha-methylglucoside, trehalose, turanose, and palatinose. PMID:7730284

  17. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    NASA Astrophysics Data System (ADS)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2016-08-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  18. Auger electron spectroscopy analysis of the first stages of thermally stimulated oxidation of GaAs(100)

    NASA Astrophysics Data System (ADS)

    Passeggi, M. C. G.; Vaquila, I.; Ferrón, J.

    1998-05-01

    The first stages (exposures <10 4 L) of thermally stimulated oxidation of GaAs(100) have been studied using Auger electron spectroscopy and principal component analysis. We compare the GaAs oxidation processes taking place at high (700 K) and room temperatures, and during simultaneous electron bombardment and oxygen exposure. We found that while at room temperature, GaAs oxidizes via a one-phase process involving the simultaneous oxidation of Ga and As, the high temperature process is characterized by the presence of two different GaAs oxide phases. The first phase involves the simultaneous oxidation of Ga and As while in the second, only Ga oxides are formed. On the other hand, under simultaneous oxygen exposure and electron irradiation, two different oxide phases appear, both of them exhibiting the same features of the room temperature process, i.e., the simultaneous oxidation of Ga and As.

  19. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

    SciTech Connect

    Guo, W. Pena, V.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P.; Date, L.; Bao, X.; Sanchez, E.; Vandervorst, W.

    2014-08-11

    High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

  20. High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

    SciTech Connect

    Provence, S. R. Ricker, R.; Aytac, Y.; Boggess, T. F.; Prineas, J. P.

    2015-09-28

    InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.

  1. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; Woo, Jason C. S.

    2016-04-01

    Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

  2. Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

    NASA Astrophysics Data System (ADS)

    Bogumilowicz, Y.; Hartmann, J. M.; Rochat, N.; Salaun, A.; Martin, M.; Bassani, F.; Baron, T.; David, S.; Bao, X.-Y.; Sanchez, E.

    2016-11-01

    We have grown GaAs epitaxial layers on Ge buffers, themselves on Si (001) substrates, using an Applied Materials 300 mm metal organic chemical vapor deposition tool. We varied the Ge buffer thickness between 0.36 and 1.38 μm and studied the properties of a 0.27 μm thick GaAs layer on top. We found that increasing the Ge buffer thickness yielded smoother GaAs films with an rms surface roughness as low as 0.5 nm obtained on a 5×5 μm2 area. The bow of the substrate increased following a linear law with the epitaxial stack thickness up to 240 μm for a 1.65 μm stack. We have also characterized the threading dislocations present in the GaAs layers using X-ray diffraction and cathodoluminescence. Increasing the Ge buffer thickness resulted in lower threading dislocation densities, enabling us to obtain anti-phase boundary - free GaAs films with a threading dislocation density as low as 3×107 cm-2. In addition, atomic force microscopy surface topology measurements showed the presence of pits in the GaAs layers whose density agreed well with other threading dislocation density assessments. It thus seems that threading dislocations can in certain cases induce some growth rate variations, making them visible in as-grown GaAs films. Using thicker Ge buffers results in smoother films with less threading dislocations, with the side effect of increasing the bow on the wafer. If bow is not an issue, this is a practical approach to improve the GaAs (on Ge buffer) on silicon quality.

  3. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  4. Supercontinuum generation from 2 to 20 μm in GaAs pumped by picosecond CO₂ laser pulses.

    PubMed

    Pigeon, J J; Tochitsky, S Ya; Gong, C; Joshi, C

    2014-06-01

    We report on the generation of supercontinuum radiation from 2 to 20 μm in a 67 mm long GaAs crystal pumped by a train of 3 ps CO2 laser pulses. Temporal measurements indicate that sub-picosecond pulse splitting is involved in the production of such wide-bandwidth radiation in GaAs. The results show that the observed spectral broadening is heavily influenced by four-wave mixing and stimulated Raman scattering.

  5. Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

    SciTech Connect

    Placidi, E.; Arciprete, F.; Balzarotti, A.; Patella, F.

    2012-10-01

    The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

  6. Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth.

    PubMed

    Helfrich, Mathieu; Gröger, Roland; Förste, Alexander; Litvinov, Dimitri; Gerthsen, Dagmar; Schimmel, Thomas; Schaadt, Daniel M

    2011-01-01

    In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.

  7. Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties

    SciTech Connect

    Golubok, A. O.; Samsonenko, Yu. B.; Mukhin, I. S. Buravlev, A. D.; Cirlin, G. E.

    2011-08-15

    A method for the formation of single GaAs semiconductor nanowhiskers and their assemblies on the tip of a chemically etched tungsten needle by molecular-beam epitaxy is proposed. The focused-ionbeam technique was used to separate a single nanowhisker. Electronic properties of single nanowhiskers were studied by elastic tunneling spectroscopy in ultrahigh vacuum. The band gap and the doping level of GaAs whiskers were determined using the current-voltage characteristics obtained from these measurements.

  8. First-principles calculations for the structural and electronic properties of GaAs1-xPx nanowires

    NASA Astrophysics Data System (ADS)

    Mohammad, Rezek; Katırcıoğlu, Şenay

    2016-09-01

    Structural stability and electronic properties of GaAs1-xPx (0.0≤x≤1.0) nanowires (NWs) in zinc-blende (ZB) (˜5≤ diameter ≤˜21Å) and wurtzite (WZ) (˜5≤diameter≤˜29Å) phases are investigated by first-principles calculations based on density functional theory (DFT). GaAs (x=0.0) and GaP (x=1.0) compound NWs in WZ phase are found energetically more stable than in ZB structural ones. In the case of GaAs1-xPx alloy NWs, the energetically favorable phase is found size and composition dependent. All the presented NWs have semiconductor characteristics. The quantum size effect is clearly demonstrated for all GaAs1-xPx (0.0≤x≤1.0) NWs. The band gaps of ZB and WZ structural GaAs compound NWs with ˜10≤ diameter ≤˜21Å and ˜5≤diameter≤˜29Å, respectively are enlarged by the addition of concentrations of phosphorus for obtaining GaAs1-xPx NWs proportional to the x values around 0.25, 0.50 and 0.75.

  9. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  10. Hole mobility of GaAs, GaP, and GaAs1-xPx mixed-compound semiconductors

    NASA Astrophysics Data System (ADS)

    Takeda, Kyozaburo; Matsumoto, Nobuo; Taguchi, Akihito; Taki, Hiroyuki; Ohta, Eiji; Sakata, Makoto

    1985-07-01

    With the use of the substitutional virtual-crystal-approximation method, the composition dependence is semiempirically estimated for the GaAs1-xPx valence-band parameter and the hole-phonon coupling constants. Alloy scattering is also investigated with the help of dielectric band theory. Taking account of the inter-valence-band interaction, we discuss theoretical hole mobility using two different approaches: the conventional effective-relaxation-time approximation and Rode's difference approximation. Owing to decreased split-off energy, the influence of inter-valence-band interaction on the hole material parameter is strengthened with increased P content and temperature.

  11. Regimes of radial growth for Ga-catalyzed GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Dubrovskii, V. G.; Berdnikov, Y.; Sibirev, N. V.

    2016-07-01

    We present a non-stationary growth model of Ga-catalyzed GaAs nanowires which is based on the two kinetic equations for the nanowire elongation rate and a time-dependent base radius of the droplet. We show that self-catalyzed nanowire growth is principally different from the Au-catalyzed one because a stationary droplet size cannot be maintained at all times. Close examination of the model enables us to separate different regimes of radial growth in which the droplet shrinks, inflates or converges to a certain stationary size as nanowires grow, depending on the initial droplet radius and the growth conditions. We also discuss some experimental data on the growth modes of Ga-catalyzed GaAs nanowires from the viewpoint of the obtained results.

  12. Optical gain control of GaAs microwave monolithic integrated circuit distributed amplifier

    NASA Astrophysics Data System (ADS)

    Paolella, Arthur; Herczfeld, Peter R.

    1989-02-01

    An optical gain control circuit for controlling the gain of a GaAs MMIC distributed amplifier having a dc gain control is provided. Variable intensity light from a controlled LED is directed to the surface of a GaAs multi-finger FET by means of an optical fiber. The FET is gate biased to a point near pinch-off to maximize its light sensitivity and the drain and source of the FET are serially connected with a fixed resistance in a dc voltage divider circuit so that the output of the voltage divider circuit changes as a function of the change in light intensity of the LED. A MMIC operational amplifier connected in an inverter mode is coupled between the output of the voltage divider circuit and the dc gain control of the distributed amplifier to control the gain of that amplifier.

  13. Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs

    NASA Astrophysics Data System (ADS)

    Goltzene, A.; Meyer, B.; Schwab, C.; Greenbaum, S. G.; Wagner, R. J.; Kennedy, T. A.

    1984-12-01

    A series of fast neutron-irradiated GaAs samples (neutron fluence range of 2×1015-2.5×1017 cm-2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (˜1 kG) Lorentzian singlet at g≊2.09 superimposed on the AsGa quadruplet. The singlet intensity scales linearly with neutron fluence as does that of the quadruplet. The presence of this new defect has not been reported in as-grown GaAs known to have large concentrations of AsGa defects. EPR measurements at 35, 159, and 337 GHz indicate that the singlet linewidth increases with the microwave frequency.

  14. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect

    Bietti, Sergio Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano; Fedorov, Alexey

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  15. Oxidation of GaAs Using Helicon-Wave Excited Nitrogen-Oxygen-Argon Plasma

    NASA Astrophysics Data System (ADS)

    Wada, Satoshi; Kasahara, Fumio; Hara, Akio; Ikoma, Hideaki

    1998-04-01

    GaAs (100) substrates were exposed to the helicon-wave excited N2 O2 Ar plasma without and with substrate heating at 200°C. The oxide dominantly composed of Ga2O3 and As2O3, was grown on the GaAs substrate using this technique. The chemical composition of this oxide was highly uniform along the thickness of the oxide film. Relatively good capacitance-voltage (C V) characteristics were obtained. X-ray photoelectron spectroscopic data indicated that gallium nitride (GaN) bonds were formed at the oxide/GaAs interface only with both substrate heating and post-thermal annealing at 200°C for 30 min in a nitrogen ambient. The formation of the GaN/GaAs interface improved the C V characteristics to some extent.

  16. Liquid Phase Chemical-Enhanced Oxidation for GaAs Operated Near Room Temperature

    NASA Astrophysics Data System (ADS)

    Wang, Hwei-Heng; Huang, Chien-Jung; Wang, Yeong-Her; Houng, Mau-Phon

    1998-01-01

    A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40°C 70°C) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAs without any extra energy source. A relatively high oxidation rate (≃1000 Å/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy (XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga2O3 and As2O3.

  17. Evaluation of GaAs FETs for cryogenic readout. [for Gravity Probe B spacecraft

    NASA Technical Reports Server (NTRS)

    Kirschman, Randall K.; Lemoff, Sony V.; Lipa, John A.

    1992-01-01

    Low-frequency, low-noise, low-power cryogenic electronics to read out photodetectors is being investigated for the star-tracking telescope of the Gravity Probe B spacecraft. We report our initial findings from evaluating more than 20 types of GaAs FETs, both commercial and non-commercial, for this application. Most exhibit useable dc characteristics at cryogenic temperatures, although gate leakage and hysteretic effects (presumably due to charge trapping) could be troublesome. Low-frequency noise (based primarily on grounded-gate measurements) at 4 K is '1/f-like' and for the quietest GaAs FETs appears to be at least as low as the lowest noise values reported for Si MOSFETs at 4 K. Further investigation is needed in several areas.

  18. Direct Measurement of Surface Defect Level Distribution Associated with GaAs Antiphase Boundaries

    SciTech Connect

    Xu, Q.; Hsu, J.W.

    1999-01-01

    Using an electrostatic force microscope, we measure surface contact potential (SCP) variations across antiphase boundaries (APBs) on GaAs films grown on Ge substrates. The SCP at the APBs is consistently and reproducibly measured to be 30 mV higher than that at GaAs domains. This is due to Fermi levels being pinned at different surface states. The identical electrical behavior observed for all APBs indicates that they are the lowest energy {l_brace}110{r_brace} orientation. The sign of observed Fermi level shift is consistent with a prevalence of Ga-Ga bonds at real {l_brace}110{r_brace} APBs. {copyright} {ital 1999} {ital The American Physical Society}

  19. MOCVD of GaAs in a horizontal reactor - Modeling and growth

    NASA Technical Reports Server (NTRS)

    Clark, Ivan O.; Fox, Bradley A.; Jesser, William A.; Black, Linda R.

    1991-01-01

    A two-dimensional model for metalorganic chemical vapor deposition of GaAs in a horizontal reactor is presented. The model is characterized by the following parameters: reactor geometry and operating pressure, thermal boundary conditions, ratio of reactants, chemical reactions, total inlet gas flow rate, as well as molecular weights, thermal conductivities, heat capacities, viscosities, and binary diffusion coefficients of the gas-phase species. Film thickness profiles predicted by the model are compared with those of GaAs thin films grown in the modeled reactor. Results obtained show a good agreement between the predictions and data over the entire length of the deposition region for the low pressure and high flow rate run. Attention is also given to the reactor design and growth conditions.

  20. Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes.

    PubMed

    Xu, Ming; Bian, Kangkang; Ma, Cheng; Jia, Hangjuan; An, Xin; Shi, Wei

    2016-09-15

    In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 μJ. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering. PMID:27628404

  1. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    SciTech Connect

    Hendra P, I. B. Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-04-16

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%.

  2. Properties of epitaxial BaTiO{sub 3} deposited on GaAs

    SciTech Connect

    Contreras-Guerrero, R.; Droopad, R.; Veazey, J. P.; Levy, J.

    2013-01-07

    Single crystal BaTiO{sub 3} (BTO) has been grown epitaxially on GaAs using molecular beam epitaxy with a 2 unit cell SrTiO{sub 3} nucleation layer. The oxide film is lattice-matched to GaAs through an in-plane rotation of 45 Degree-Sign relative to the (100) surface leading to c-axis orientation of the BaTiO{sub 3}. X-ray diffraction confirmed the crystallinity and orientation of the oxide film with a full width half maximum of 0.58 Degree-Sign for a 7.5 nm thick layer. Piezoresponse force microscopy was used to characterize the ferroelectric domains in the BaTiO{sub 3} layer, and a coercive voltage of 1-2 V and piezoresponse amplitude {approx}5 pm/V was measured.

  3. Interface dynamics and crystal phase switching in GaAs nanowires

    PubMed Central

    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A; Ross, Frances M

    2016-01-01

    Summary Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically-grown nanowires provide an ideal system for studying the fundamental physics of phase selection, while also offering the potential for novel electronic applications based on crystal polytype engineering. Here we image GaAs nanowires during growth as they are switched between polytypes by varying growth conditions. We find striking differences between the growth dynamics of the polytypes, including differences in interface morphology, step flow, and catalyst geometry. We explain the differences, and the phase selection, through a model that relates the catalyst volume, contact angle at the trijunction, and nucleation site of each new layer. This allows us to predict the conditions under which each phase should be preferred, and use these predictions to design GaAs heterostructures. We suggest that these results may apply to phase selection in other nanowire systems. PMID:26983538

  4. Wurtzite GaAs Quantum Wires: One-Dimensional Subband Formation.

    PubMed

    Vainorius, Neimantas; Lehmann, Sebastian; Gustafsson, Anders; Samuelson, Lars; Dick, Kimberly A; Pistol, Mats-Erik

    2016-04-13

    It is of contemporary interest to fabricate nanowires having quantum confinement and one-dimensional subband formation. This is due to a host of applications, for example, in optical devices, and in quantum optics. We have here fabricated and optically investigated narrow, down to 10 nm diameter, wurtzite GaAs nanowires which show strong quantum confinement and the formation of one-dimensional subbands. The fabrication was bottom up and in one step using the vapor-liquid-solid growth mechanism. Combining photoluminescence excitation spectroscopy with transmission electron microscopy on the same individual nanowires, we were able to extract the effective masses of the electrons in the two lowest conduction bands as well as the effective masses of the holes in the two highest valence bands. Our results, combined with earlier demonstrations of thin crystal phase nanodots in GaAs, set the stage for the fabrication of crystal phase quantum dots having full three-dimensional confinement. PMID:27004550

  5. Epitaxial two-dimensional nitrogen atomic sheet in GaAs

    SciTech Connect

    Harada, Yukihiro Yamamoto, Masuki; Baba, Takeshi; Kita, Takashi

    2014-01-27

    We have grown an epitaxial two-dimensional nitrogen (N) atomic sheet in GaAs by using the site-controlled N δ-doping technique. We observed a change of the electronic states in N δ-doped GaAs from the isolated impurity centers to the delocalized impurity band at 1.49 eV with increasing N-doping density. According to the excitation-power- and temperature-dependent photoluminescence (PL) spectra, the emission related to localized levels below the impurity band edge was dominant at low excitation power and temperature, whereas the effects of the localized levels can be neglected by increasing the excitation power and temperature. Furthermore, a clear Landau shift of the PL-peak energy was observed at several Tesla in the Faraday configuration, in contrast to the case in the impurity limit.

  6. A payload for investigating the influence of convection on GaAs crystal growth

    NASA Technical Reports Server (NTRS)

    Bellows, Alfred H.; Duchene, Glenn A.

    1988-01-01

    A comparative study of the influence of buoyancy driven fluid flow on gallium arsenide (GaAs) crystal growth was undertaken. Crystals will be grown from melts with different degrees of convective flow including growth in the microgravity environment of space. The space growth of GaAs will be performed in a Get Away Special payload. A well insulated growth furnace was designed for both Earth-based and space-based experiments. The self contained payload will carry two such furnaces in addition to a large battery power source and a microprocessor-based control and data acquisition system for regulating the growth process with high precision. The microcomputer will also monitor the growth conditions and measure and record the acceleration in 3 axes.

  7. Effects of gold diffusion on n-type doping of GaAs nanowires.

    PubMed

    Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

    2010-11-10

    The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

  8. Local electronic structure and magnetic properties of 3d transition metal doped GaAs

    NASA Astrophysics Data System (ADS)

    Lin, He; Duan, Haiming

    2008-05-01

    The local electronic structure and magnetic properties of GaAs doped with 3d transition metal (Sc, Ti, V, Cr, Mn, Fe, Co, Ni) were studied by using discrete variational method (DVM) based on density functional theory. The calculated result indicated that the magnetic moment of transition metal increases first and then decreases, and reaches the maximum value when Mn is doped into GaAs. In the case of Mn concentration of 1.4%, the magnetic moment of Mn is in good agreement with the experimental result. The coupling between impure atoms in the system with two impure atoms was found to have obvious variation. For different transition metal, the coupling between the impure atom and the nearest neighbor As also has different variation.

  9. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

    SciTech Connect

    Ripalda, J. M.; Rivera, A.; Alen, B.; Gonzalez, Y.; Gonzalez, L.; Briones, F.; Sanchez, A. M.; Taboada, A. G.; Rotter, T. J.; Balakrishnan, G.

    2012-01-02

    We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

  10. In Situ Heat-Induced Replacement of GaAs Nanowires by Au.

    PubMed

    Fauske, Vidar T; Huh, Junghwan; Divitini, Giorgio; Dheeraj, Dasa L; Munshi, A Mazid; Ducati, Caterina; Weman, Helge; Fimland, Bjørn-Ove; van Helvoort, Antonius T J

    2016-05-11

    Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a method to achieve well-defined junctions within nanowires. To better understand the mechanisms and dynamics that govern the replacement reaction, we performed in situ heating studies using high-resolution scanning transmission electron microscopy. The dynamic evolution of the phase boundary was investigated, as well as the crystal structure and orientation of the different phases at reaction temperatures. In general, the replacement proceeds one GaAs(111) bilayer at a time, and no fixed epitaxial relation could be found between the two phases. The relative orientation of the phases affects the replacement dynamics and can induce growth twins in the Au nanowire phase. In the case of a limited Au supply, the metal phase can also become liquid. PMID:27104293

  11. Growth and properties of crystalline barium oxide on the GaAs(100) substrate

    SciTech Connect

    Yasir, M.; Dahl, J.; Lång, J.; Tuominen, M.; Punkkinen, M. P. J.; Laukkanen, P. Kokko, K.; Kuzmin, M.; Korpijärvi, V.-M.; Polojärvi, V.; Guina, M.

    2013-11-04

    Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.

  12. Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes.

    PubMed

    Xu, Ming; Bian, Kangkang; Ma, Cheng; Jia, Hangjuan; An, Xin; Shi, Wei

    2016-09-15

    In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 μJ. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering.

  13. Comparison of various GaAs materials used for gamma-ray pulses characterization

    SciTech Connect

    Foulon, F.; Bergonzo, P.; Pochet, T.

    1996-06-01

    Gallium arsenide resistive photoconductors are widely used for the characterization of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. The authors have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron as integrated doses in the range 5 {times} 10{sup 14} to 1 {times} 10{sup 16} neutrons/cm{sup 2}. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 {times} 10{sup 15} neutrons/cm{sup 2}.

  14. A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

    SciTech Connect

    Biggeri, U.; Borchi, E.; Bruzzi, M.

    1998-06-01

    Silicon p{sup +}n junctions irradiated with neutron and proton fluences in the range 5 {times} 10{sup 11}--4 {times} 10{sup 15} cm{sup {minus}2} and non-irradiated Semi Insulating (SI) LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N{sub t} of the main radiation-induced deep traps (Et {approx} 0.44--0.54 eV) is found to increase as N{sub t} {alpha} f achieving values up to 5 {times} 10{sup 15} cm{sup {minus}3} and a mobility saturation at 100 cm{sup 2}/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.

  15. High-efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1979-01-01

    GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

  16. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Höfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  17. Studies of Nonradiative Recombination Centers in GaAs and InP*

    NASA Astrophysics Data System (ADS)

    Tuzemen, S.; Liang, Difei; Ucer, K. B.; Williams, R. T.

    2001-03-01

    The "reverse contrast" recombination center in semi-insulating GaAs, so named because of its anti-correlation with EL2 defects in spatial mapping, has been attributed to As-vacancy centers.^1 Several details of the nature of its optical transitions and of its spatial distribution are among questions open to experimental investigation. We report experiments on spectroscopy and spatial mapping of defects in semi-insulating GaAs and Fe-doped InP. *ST acknowledges the CIES for support as a Fulbright Scholar at WFU. The research at WFU is supported by NSF grant DMR-9732023. Confocal microscopy in cooperation with K. Grant and the MicroMed Facility of WFU. 1. C. Le Berre, C. Corbel, R. Mih, M. R. Brozel, S. Tüzemen, S. Kuisma, K. Saarinen, P. Hautojarvi, and R. Fornari, Appl. Phys. Lett. 66, 2354 (1995).

  18. A versatile masking process for plasma etched backside via holes in GaAs

    NASA Astrophysics Data System (ADS)

    Howard, A. J.; Shul, R. J.; Lovejoy, M. L.; Word, J. C.

    We have developed a versatile backside via patterning process for a visible transmission modulator application. The vias are processed on mechanically thinned (approximately)100 micrometers thick GaAs using a (approximately)45 micrometers thick, negative tone, photo definable Polyimide mask and Reaction Ion Etch (RIE) plasma etching. The Polyimide masking process was found to be superior in both etch resistance and ease of use (more robust process, thicker, straighter sidewall Profile films, were more easily attained) to masking with standard optical photoresist. With the improved etch resistance (GaAs-to-polyimide etch selectivities of 10:1) we were able to Optimize Cl2-based plasma chemistries and etching conditions to achieve high GaAs etch rates in the RIE exceeding 5.0 micrometers/min. These etch optimization results along with our novel via patterning process are reported in this paper.

  19. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  20. InAs growth and development of defect microstructure on GaAs

    NASA Astrophysics Data System (ADS)

    Khandekar, A. A.; Suryanarayanan, G.; Babcock, S. E.; Kuech, T. F.

    2005-02-01

    Epitaxially deposited thin films of InAs on semi-insulating GaAs substrates are commonly used for high-speed electronic devices. Large (7%) lattice mismatch between InAs and GaAs leads to Stranski-Krastanov growth mode with formation of 3D islands. The effect of growth temperature in MOVPE deposition, on InAs crystal microstructure was studied. The origin of multiple tilting of the InAs crystal lattice observed for the high temperature growths was investigated in detail. The microstructure of uncoalesced InAs islands was determined using X-ray diffraction rocking curve scans and backscattered electron Kikuchi pattern crystal orientation imaging. Misoriented grains are formed within uncoalesced InAs islands at an early stage during the growth.