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Sample records for acid etched surface

  1. Surface characterization of alkali- and heat-treated Ti with or without prior acid etching

    NASA Astrophysics Data System (ADS)

    An, Sang-Hyun; Matsumoto, Takuya; Miyajima, Hiroyuki; Sasaki, Jun-Ichi; Narayanan, Ramaswamy; Kim, Kyo-Han

    2012-03-01

    Titanium and its alloys are used as implant materials in dental and orthopaedic applications. The material affinities to host bone tissue greatly concern with the recovery period and good prognosis. To obtain a material surface having excellent affinity to bone, acid etching prior to alkali- and heat-treatment of Ti was conducted. The surface characteristics of the prepared sample indicated that the roughness as well as the wettability increased by pre-etching. Bone-like apatite was formed on pre-etched, alkali- and heat-treated Ti surface in simulated body fluid (SBF) within 3 days, while it takes 5 days on the solely alkali- and heat-treated surface. Osteoblastic cells showed better compatibility on the per-etched surface compared to the pure Ti surface or alkali- and heat-treated surface. Moreover, the pre-etched surface showed better pull-off tensile adhesion strength against the deposited apatite. Thus, acid etching prior to alkali- and heat-treatment would be a promising method for enhancing the affinity of Ti to host bone tissue.

  2. EFFECT OF ACID ETCHING OF GLASS IONOMER CEMENT SURFACE ON THE MICROLEAKAGE OF SANDWICH RESTORATIONS

    PubMed Central

    Bona, Álvaro Della; Pinzetta, Caroline; Rosa, Vinícius

    2007-01-01

    The purposes of this study were to evaluate the sealing ability of different glass ionomer cements (GICs) used for sandwich restorations and to assess the effect of acid etching of GIC on microleakage at GIC-resin composite interface. Forty cavities were prepared on the proximal surfaces of 20 permanent human premolars (2 cavities per tooth), assigned to 4 groups (n=10) and restored as follows: Group CIE – conventional GIC (CI) was applied onto the axial and cervical cavity walls, allowed setting for 5 min and acid etched (E) along the cavity margins with 35% phosphoric acid for 15 s, washed for 30 s and water was blotted; the adhesive system was applied and light cured for 10 s, completing the restoration with composite resin light cured for 40 s; Group CIN – same as Group CIE, except for acid etching of the CI surface; Group RME – same as CIE, but using a resin modified GIC (RMGIC); Group RMN – same as Group RME, except for acid etching of the RMGIC surface. Specimens were soaked in 1% methylene blue dye solution at 24°C for 24 h, rinsed under running water for 1 h, bisected longitudinally and dye penetration was measured following the ISO/TS 11405-2003 standard. Results were statistically analyzed by Kruskal-Wallis and chi-square tests (α=0.05). Dye penetration scores were as follow: CIE – 2.5; CIN – 2.5; RME – 0.9; and RMN – 0.6. The results suggest that phosphoric acid etching of GIC prior to the placement of composite resin does not improve the sealing ability of sandwich restorations. The RMGIC was more effective in preventing dye penetration at the GIC-resin composite- dentin interfaces than CI. PMID:19089135

  3. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    NASA Astrophysics Data System (ADS)

    Liu, Wenyong; Sun, Linyu; Luo, Yuting; Wu, Ruomei; Jiang, Haiyun; Chen, Yi; Zeng, Guangsheng; Liu, Yuejun

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157̊. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159̊ by coating PP-g-MAH, while the CA was only 141̊ by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro-nano concave-convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro-nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  4. Torque Analysis of a Triple Acid-Etched Titanium Implant Surface

    PubMed Central

    Pontes, Ana Emília Farias; de Toledo, Cássio Torres; Garcia, Valdir Gouveia; Ribeiro, Fernando Salimon; Sakakura, Celso Eduardo

    2015-01-01

    The present study aimed to evaluate the removal torque of titanium implants treated with triple acid etching. Twenty-one rats were used in this study. For all animals, the tibia was prepared with a 2 mm drill, and a titanium implant (2 × 4 mm) was inserted after treatment using the subtraction method of triple acid etching. The flaps were sutured. Seven animals were killed 14, 28, and 63 days after implant installation, and the load necessary for removing the implant from the bone was evaluated by using a torque meter. The torque values were as follows: 3.3 ± 1.7 Ncm (14 days), 2.2 ± 1.3 Ncm (28 days), and 6.7 ± 1.4 Ncm (63 days). The torque value at the final healing period (63 days) was statistically significantly different from that at other time points tested (ANOVA, p = 0.0002). This preliminary study revealed that treatment with triple acid etching can create a promising and efficient surface for the process of osseointegration. PMID:26543898

  5. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  6. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel.

    PubMed

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-02-01

    Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  7. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    PubMed

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  8. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    PubMed Central

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A.; Divakar, Darshan Devang; Matinlinna, Jukka P.; Vallittu, Pekka K.

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  9. Comparative Study of the Effect of Acid Etching on Enamel Surface Roughness between Pumiced and Non-pumiced Teeth

    PubMed Central

    Abreu, Lucas Guimarães; Paiva, Saul Martins; Pretti, Henrique; Lages, Elizabeth Maria Bastos; Júnior, João Batista Novães; Ferreira, Ricardo Alberto Neto

    2015-01-01

    Background: The objective was to perform a comparative analysis of the effect of acid etching on enamel roughness between pumiced and non-pumiced teeth. Materials and Methods: The sample was composed of 32 dental surfaces divided into two groups: Group 1-16 surfaces having received pumice prophylaxis; and Group 2-16 surfaces not having received pumice prophylaxis. The teeth were kept in saline until the first record of surface roughness prior to etching. For each surface, a roughness graph was obtained through trials using a surface roughness tester. This procedure was repeated two more times at different locations for a total of three readings which, later, were converted in a mean value. The teeth were then acid etched with a 37% phosphoric acid for 60 s, rinsed with water, air dried, and tested with the roughness tester again using the same protocol described for baseline. The Quantikov image analysis program was used to measure the length of the graphs. The average value of the lengths was recorded for each surface before and after etching. The increase in roughness caused by acid etching was calculated and compared between groups. Results: The mean increase in roughness caused by the etching was 301 µm (11.37%) in Group 1 and 214 µm (8.33%) in Group 2. No statistically significant difference was found between samples with and without pumice prophylaxis (P = 0.283). Conclusion: The present study showed that the effect of acid etching on enamel roughness was not significantly affected by prior pumice prophylaxis. PMID:26435607

  10. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm × 5 mm × 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37℃ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (α=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 ± 1.94 MPa) and Group 3 (3.65 ± 1.87 MPa) than in Control group (1.95 ± 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 ± 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 ± 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  11. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    PubMed Central

    Hoshing, Upendra A; Patil, Suvarna; Medha, Ashish; Bandekar, Siddhesh Dattatray

    2014-01-01

    Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M). In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M) was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply) was applied onto the test areas as a 3 × 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 ± 0.66MPa, range 25.155 to 27.150 MPa) was significantly higher (P < 0.01) than for laser-etched enamel (16.23 ± 0.71MPa, range 15.233 to 17.334 MPa). Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching. PMID:25125842

  12. Acid Etching and Surface Coating of Glass-Fiber Posts: Bond Strength and Interface Analysis.

    PubMed

    Cecchin, Doglas; Farina, Ana Paula; Vitti, Rafael Pino; Moraes, Rafael Ratto; Bacchi, Ataís; Spazzin, Aloísio Oro

    2016-01-01

    The aim of this study was to evaluate the bond strength of a composite resin to glass-fiber post (GFP) treated or not with phosphoric acid, silane coupling agent, and unfilled resin. GFPs were etched or not with 37% phosphoric acid and different surface coating applied: silane coupling agent, unfilled resin, or both. Composite resin blocks were built around a 4-mm height on the GFP. Unfilled resin (20 s) and composite resin (40 s) were light activated by a light-emitting diode unit. The specimens were stored in distilled water at 37 °C for 24 h. Microtensile bond test was performed using a mechanical testing machine until failure (n=10). The data were analyzed using two-way ANOVA followed by Student-Newman-Keuls' test (p<0.05). Failure modes were classified as adhesive, mixed, or cohesive failures. Additional specimens (n=3) were made to analyze the bonded interfaces by scanning electron microscopy. The statistical analysis showed the factor 'surface coating' was significant (p<0.05), whereas the factor 'HP etching' (p=0.131) and interaction between the factors (p=0.171) were not significant. The highest bond strength was found for the silane and unfilled resin group (p<0.05). A predominance of adhesive and cohesive failures was found. Differences regarding the homogeneity and thickness of the unfilled resin layer formed by different GFP surface treatments were observed. The application of silane and unfilled resin can improve the bond strength between GFP and resin composite. PMID:27058389

  13. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  14. The research on conformal acid etching process of glass ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  15. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    PubMed Central

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  16. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    PubMed

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s. PMID:27315775

  17. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  18. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    PubMed

    Monje, Alberto; González-García, Raúl; Fernández-Calderón, María Coronada; Hierro-Oliva, Margarita; González-Martín, María Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 × 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ≥×500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to ×2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined. PMID:25642739

  19. Nanoparticle-based etching of silicon surfaces

    SciTech Connect

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  20. Comparison of shear bond strength and surface structure between conventional acid etching and air-abrasion of human enamel.

    PubMed

    Olsen, M E; Bishara, S E; Damon, P; Jakobsen, J R

    1997-11-01

    Recently, air-abrasion technology has been examined for potential applications within dentistry, including the field of orthodontics. The purpose of this study was to compare the traditional acid-etch technique with an air-abrasion surface preparation technique, with two different sizes of abrading particles. The following parameters were evaluated: (a) shear bond strength, (b) bond failure location, and (c) enamel surface preparation, as viewed through a scanning electron microscope. Sixty extracted human third molars were pumiced and divided into three groups of 20. The first group was etched with a 37% phosphoric acid gel for 30 seconds, rinsed for 30 seconds, and dried for 20 seconds. The second and third groups were air-abraded with (a) a 50 microm particle and (b) a 90 microm particle of aluminum oxide, with the Micro-etcher microabrasion machine (Danville Engineering Inc.). All three groups had molar stainless steel orthodontic brackets bonded to the buccal surface of each tooth with Transbond XT bonding system (3M Unitek). A Zwick Universal Testing Machine (Calitek Corp.) was used to determine shear bond strengths. The analysis of variance was used to compare the three groups. The Adhesive Remnant Index (ARI) was used to evaluate the residual adhesive on the enamel after bracket removal. The chi square test was used to evaluate differences in the ARI scores among the groups. The significance for all tests was predetermined at p < or = 0.05. The results indicated that there was a significant difference in shear bond strength among the three groups (p = 0.0001). The Duncan Multiple Range test showed a significant decrease in shear bond strength in the air-abraded groups. The chi square test revealed significant differences among the ARI scores of the acid-etched group and the air-abraded groups (chi(2) = 0.0001), indicating no adhesive remained on the enamel surface after debonding when air-abrasion was used. In conclusion, the current findings indicate that

  1. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    PubMed Central

    STEINHAUSER, Henrique Caballero; TURSSI, Cecília Pedroso; FRANÇA, Fabiana Mantovani Gomes; do AMARAL, Flávia Lucisano Botelho; BASTING, Roberta Tarkany

    2014-01-01

    Objective The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8): C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results One-way ANOVA test showed no significant difference between treatments (p=0.3197) and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed. PMID:24676577

  2. The Effect of Carbon Dioxide (CO2) Laser on Sandblasting with Large Grit and Acid Etching (SLA) Surface

    PubMed Central

    Foroutan, Tahereh; Ayoubian, Nader

    2013-01-01

    Introduction: The purpose of this study was to investigate the effect of 6W power Carbon Dioxide Laser (CO2) on the biologic compatibility of the Sandblasting with large grit and acid etching (SLA) titanium discs through studying of the Sarcoma Osteogenic (SaOS-2) human osteoblast-like cells viability. Methods: Sterilized titanium discs were used together with SaOS-2 human osteoblast-like cells. 6 sterilized SLA titanium discs of the experimental group were exposed to irradiation by CO2 laser with a power of 6W and 10.600nm wavelength, at fixed frequency of 80Hz during 45 seconds in both pulse and non-contact settings. SaOS-2 human osteoblast-like cells were incubated under 37°C in humid atmosphere (95% weather, 5% CO2) for 72 hours. MTT test was performed to measure the ratio level of cellular proliferation. Results: The results indicated that at 570nm wavelength, the 6W CO2 laser power have not affected the cellular viability. Conclusion: CO2 laser in 6w power has had no effect on the biologic compatibility of the SLA titanium surface PMID:25606313

  3. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    NASA Astrophysics Data System (ADS)

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-10-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II-V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease.

  4. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  5. Effect of bulk microstructure of commercially pure titanium on surface characteristics and fatigue properties after surface modification by sand blasting and acid-etching.

    PubMed

    Medvedev, A E; Ng, H P; Lapovok, R; Estrin, Y; Lowe, T C; Anumalasetty, V N

    2016-04-01

    Surface modification techniques are widely used to enhance the biological response to the implant materials. These techniques generally create a roughened surface, effectively increasing the surface area thus promoting cell adhesion. However, a negative side effect is a higher susceptibility of a roughened surface to failure due to the presence of multiple stress concentrators. The purpose of the study reported here was to examine the effects of surface modification by sand blasting and acid-etching (SLA) on the microstructure and fatigue performance of coarse-grained and ultrafine-grained (UFG) commercially pure titanium. Finer grain sizes, produced by equal channel angular pressing, resulted in lower values of surface roughness in SLA-processed material. This effect was associated with greater resistance of the UFG structure to plastic deformation. The fatigue properties of UFG Ti were found to be superior to those of coarse-grained Ti and conventional Ti-6Al-4V, both before and after SLA-treatment. PMID:26703365

  6. Effects of Dextrose and Lipopolysaccharide on the Corrosion Behavior of a Ti-6Al-4V Alloy with a Smooth Surface or Treated with Double-Acid-Etching

    PubMed Central

    Faverani, Leonardo P.; Assunção, Wirley G.; de Carvalho, Paulo Sérgio P.; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T.; Barao, Valentim A.

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (p<0.05) for the Ti-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (p<0.05). The acid-treated groups showed a significant increase in Cdl values and reduced Rp values (p<0.05, t-test). According to the topography, there was an increase in surface roughness (R2 = 0.726, p<0.0001 for the smooth surface; R2 = 0.405, p = 0.036 for the double-acid-etching-treated surface). The microhardness of the smooth Ti-6Al-4V alloy decreased (p<0.05) and that of the treated Ti-6Al-4V alloy increased (p<0.0001). Atomic force microscopy showed changes in the microstructure of the Ti-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no

  7. In vitro evaluation of microleakage under orthodontic brackets using two different laser etching, self etching and acid etching methods.

    PubMed

    Hamamci, Nihal; Akkurt, Atilim; Başaran, Güvenç

    2010-11-01

    This study evaluated the microleakage of brackets bonded by four different enamel etching techniques. Forty freshly extracted human premolars were divided randomly into four equal groups and received the following treatment: group 1, acid etching; group 2, self-etching primer (SEP); group 3, erbium:yttrium-aluminum-garnet (Er:YAG) laser etching; and group 4, erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser etching. After photopolymerization, the teeth were kept in distilled water for 1 month and then subjected to 500 thermal cycles. Then, the specimens were sealed with nail varnish, stained with 0.5% basic fuchsin for 24 h, sectioned, and examined under a stereomicroscope. In addition, they were scored for marginal microleakage at the adhesive-enamel and bracket-adhesive interfaces from the incisal and gingival margins. Statistical analyses consisted of the Kruskal-Wallis test and the Mann-Whitney U test with Bonferroni correction. Microleakage occurred between the adhesive-enamel and bracket-adhesive interfaces in all groups. For the adhesive-enamel surface, a significant difference was observed between group 1 and groups 2 (P = 0.011), 3 (P = 0.002), and 4 (P = 0.000) on the gingival side. Overall, significant differences were observed between group 1 and groups 3 (P = 0.003) and 4 (P = 0.000). In dental bonding procedures, acid etching was found to result in the least microleakage. Since etching with a laser decreases the risk of caries and is time-saving, it may serve as an alternative to acid etching. PMID:19562404

  8. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    PubMed

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (p<0.05) SBS and SFL with pre-etching than it did without pre-etching. The SBS and SFL of dentin bonds decreased with phosphoric acid pre-etching. The SBS and SFL of bonds using phosphoric acid prior to application of self-etching adhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was

  9. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  10. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  11. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    PubMed Central

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  12. Formation of nanostructured silicon surfaces by stain etching

    PubMed Central

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  13. Formation of nanostructured silicon surfaces by stain etching.

    PubMed

    Ayat, Maha; Belhousse, Samia; Boarino, Luca; Gabouze, Noureddine; Boukherroub, Rabah; Kechouane, Mohamed

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  14. SEM ANALYSIS OF THE ACID-ETCHED ENAMEL PATTERNS PROMOTED BY ACIDIC MONOMERS AND PHOSPHORIC ACIDS

    PubMed Central

    Shinohara, Mirela Sanae; de Oliveira, Marcelo Tavares; Hipólito, Vinícius Di; Giannin, Marcelo; de Goes, Mario Fernando

    2006-01-01

    Objective: Although self-etching bonding systems (SES) are indicated to prepare dental enamel for bonding, concerns have been expressed regarding their effectiveness. The aim of this study was to analyze the etching pattern (EP) of nine SES in comparison with 35% and 34% phosphoric acid etchants (FA) on intact (IN) and ground (GR) enamel surface. Materials and Methods: Twenty-two human third molars were sectioned in mesial-distal and buccal-lingual directions, and four dental fragments were obtained from each tooth. Half of the fragments were ground using 600-grit SiC paper and the other half remained intact. The fragments were randomly assigned into 22 groups, according to the texture of enamel surface (IN and GR) and the technique to etch the enamel (34% FA, 35% FA, AdheSE primer; Brush & Bond; Clearfil Protect Bond primer; iBond; One-up Bond F; OptiBond Solo Plus primer; Tyrian SPE primer; Unifil Bond primer and Xeno III). Conditioners were applied to IN and GR enamel surfaces, according to the manufacturer's instructions. Specimens etched with phosphoric acids were washed with water, while the surfaces treated with SES were submitted to alternate rinsing with alcohol and acetone. The specimens were dried, sputter-coated and examined under a scanning electron microscope. Results: For both IN and GR enamel surfaces, the EP of 34 and 35% FA was deeper and more homogeneous in comparison to EP of SES, except for Tyrian SPE. The acidic monomer action of self-etching systems was more effective on GR enamel. Conclusion: Most of the SES are less aggressive than phosphoric acid etchants and their etching effects were reduced on intact enamel surfaces. Uniterms: Dental acid etching; Dental enamel; Electron microscopy. PMID:19089243

  15. Etching of Crystalline ZnO Surfaces upon Phosphonic Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers.

    PubMed

    Ostapenko, Alexandra; Klöffel, Tobias; Eußner, Jens; Harms, Klaus; Dehnen, Stefanie; Meyer, Bernd; Witte, Gregor

    2016-06-01

    Functionalization of metal oxides by means of covalently bound self-assembled monolayers (SAMs) offers a tailoring of surface electronic properties such as their work function and, in combination with its large charge carrier mobility, renders ZnO a promising conductive oxide for use as transparent electrode material in optoelectronic devices. In this study, we show that the formation of phosphonic acid-anchored SAMs on ZnO competes with an unwanted chemical side reaction, leading to the formation of surface precipitates and severe surface damage at prolonged immersion times of several days. Combining atomic force microscopy (AFM), X-ray diffraction (XRD), and thermal desorption spectroscopy (TDS), the stability and structure of the aggregates formed upon immersion of ZnO single crystal surfaces of different orientations [(0001̅), (0001), and (101̅0)] in phenylphosphonic acid (PPA) solution were studied. By intentionally increasing the immersion time to more than 1 week, large crystalline precipitates are formed, which are identified as zinc phosphonate. Moreover, the energetics and the reaction pathway of this transformation have been evaluated using density functional theory (DFT), showing that zinc phosphonate is thermodynamically more favorable than phosphonic acid SAMs on ZnO. Precipitation is also found for phosphonic acids with fluorinated aromatic backbones, while less precipitation occurs upon formation of SAMs with phenylphosphinic anchoring units. By contrast, no precipitates are formed when PPA monolayer films are prepared by sublimation under vacuum conditions, yielding smooth surfaces without noticeable etching. PMID:27159837

  16. Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch-Resistant Material

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Akira; Hinoura, Ryo; Toyoda, Noriaki; Hara, Ken-ichi; Yamada, Isao

    2013-05-01

    Gas cluster ion beam (GCIB) etching of etch-resistant materials under acetic acid vapor was studied for development of new manufacturing process of future nonvolatile memory. Etching depths of various etch-resistant materials (Pt, Ru, Ta, CoFe) with acetic acid vapor during O2-GCIB irradiations were 1.8-10.7 times higher than those without acetic acid. Also, etching depths of Ru, Ta, CoFe by Ar-GCIB with acetic acid vapor were 2.2-16.1 times higher than those without acetic acid. Even after etching of Pt, smoothing of Pt was realized using O2-GCIB under acetic acid. From XPS and angular distribution of sputtered Pt, it was shown that PtOx layer was formed on Pt after O2-GCIB irradiation. PtOx reacted with acetic acid by GCIB bombardments; as a result, increase of etching depth was observed.

  17. Effect of erbium-doped: yttrium, aluminium and garnet laser irradiation on the surface microstructure and roughness of sand-blasted, large grit, acid-etched implants

    PubMed Central

    Lee, Ji-Hun; Kwon, Young-Hyuk; Herr, Yeek; Shin, Seung-Il

    2011-01-01

    Purpose The present study was performed to evaluate the effect of erbium-doped: yttrium, aluminium and garnet (Er:YAG) laser irradiation on sand-blasted, large grit, acid-etched (SLA) implant surface microstructure according to varying energy levels and application times of the laser. Methods The implant surface was irradiated by the Er:YAG laser under combined conditions of 100, 140, or 180 mJ/pulse and an application time of 1 minute, 1.5 minutes, or 2 minutes. Scanning electron microscopy (SEM) was used to examine the surface roughness of the specimens. Results All experimental conditions of Er:YAG laser irradiation, except the power setting of 100 mJ/pulse for 1 minute and 1.5 minutes, led to an alteration in the implant surface. SEM evaluation showed a decrease in the surface roughness of the implants. However, the difference was not statistically significant. Alterations of implant surfaces included meltdown and flattening. More extensive alterations were present with increasing laser energy and application time. Conclusions To ensure no damage to their surfaces, it is recommended that SLA implants be irradiated with an Er:YAG laser below 100 mJ/pulse and 1.5 minutes for detoxifying the implant surfaces. PMID:21811689

  18. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  19. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    NASA Astrophysics Data System (ADS)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  20. Acid-etched splinting to a ceramometal abutment.

    PubMed

    Jordan, R D; Aquilino, S A; Krell, K V

    1986-05-01

    This technique describes an acid-etch metal splint with a ceramometal abutment. The internal surface of the DuraLingual Wing Form patterns provide undercuts necessary for composite bonding. The external surface provides a smooth solid metal surface when cast. Since this system uses mechanical undercuts, the resin-bonded splints can have multiple try-ins without the detrimental effects of burnishing and contamination that occur with electrolytically etched metal surfaces. If an abutment for a resin-retained fixed partial denture requires a ceramometal crown, a DuraLingual Wing Form can be incorporated onto its lingual surface thereby providing mechanical undercuts for bonding. The opposite undercuts of the crown and splint provide excellent bond strength for the system. PMID:3519944

  1. Behavior of acid etching on titanium: topography, hydrophility and hydrogen concentration.

    PubMed

    Lin, Xi; Zhou, Lei; Li, Shaobing; Lu, Haibin; Ding, Xianglong

    2014-02-01

    Since acid etching is easily controlled and effective, it has become one of the most common methods of surface modification. However, the behavior of etching is seldom discussed. In this study, different surfaces of titanium were prepared by changing the etching temperature and time. Surface topography, roughness, contact angles, surface crystalline structure, hydrogen concentration and mechanical properties were observed. As a result, surface topography and roughness were more proportional to etching temperature; however, diffusion of hydrogen and tensile strength are more time-related to titanium hydride formation on the surface. Titanium becomes more hydrophilic after etching even though the micropits were not formed after etching. More and deeper cracks were found on the specimens with more hydrogen diffusion. Therefore, higher temperature and shorter time are an effective way to get a uniform surface and decrease the diffusion of hydrogen to prevent hydrogen embrittlement. PMID:24343349

  2. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    PubMed

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method. PMID:26418567

  3. Adult Stem Cells Properties in Terms of Commitment, Aging and Biological Safety of Grit-Blasted and Acid-Etched Ti Dental Implants Surfaces

    PubMed Central

    Gardin, Chiara; Ferroni, Letizia; Bressan, Eriberto; Calvo - Guirado, José L.; Degidi, Marco; Piattelli, Adriano; Zavan, Barbara

    2014-01-01

    Titanium (Ti) is one of the most widely used biomaterials for manufacturing dental implants. The implant surface properties strongly influence osseointegration. The aim of the present study was to in vitro investigate the characteristics of Ti dental implants in terms of mutagenicity, hemocompatibility, biocompatibility, osteoinductivity and biological safety. The Ames test was used to test the mutagenicity of the Ti dental implants, and the hemolysis assay for evaluating their hemocompatibility. Human adipose - derived stem cells (ADSCs) were then seeded onto these implants in order to evaluate their cytotoxicity. Gene expression analyzing with real-time PCR was carried out to investigate the osteoinductivity of the biomaterials. Finally, the genetic stability of the cells cultured onto dental implants was determined by karyotyping. Our results demonstrated that Ti dental implants are not mutagenic, do not cause hemolysis, and are biocompatible. The MTT assay revealed that ADSCs, seeded on Ti dental implants, proliferate up to 30 days in culture. Moreover, ADSCs loaded on Ti dental implants show a substantial expression of some osteoblast specific markers, such as COL1A1, OPN, ALPL, and RUNX2, as well as chromosomal stability after 30 days of culture in a medium without osteogenic factors. In conclusion, the grit-blasted and acid-etched treatment seems to favor the adhesion and proliferation of ADSCs and improve the osteoinductivity of Ti dental implant surfaces. PMID:25635249

  4. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  5. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study.

    PubMed

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  6. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    PubMed Central

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  7. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    PubMed Central

    Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh

    2014-01-01

    Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS) and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG) laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under ×10 magnification and adhesive remnant index (ARI) score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa) was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa) (P = 0.41). There was no significant difference in the ARI scores between two groups (P = 0.08). However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching. PMID:25097641

  8. Enhancement of RIE: etched Diffractive Optical Elements surfaces by using Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Schmitt, J.; Bischoff, Ch.; Rädel, U.; Grau, M.; Wallrabe, U.; Völklein, F.

    2015-09-01

    Shaping of laser light intensities by using Diffractive Optical Elements allows the adaption of the incident light to its application. Fused silica is used where for example UV-light or high temperatures are mandatory. For high diffraction efficiency the quality of the etched surface areas is important. The investigation of different process parameters for Ion Beam and Reactive Ion Etching reveals that only Ion Beam Etching provides surfaces with optical quality. Measurements of the influence of the surface quality on the diffraction efficiencies prove that the surfaces generated by Reactive Ion Etching are not suitable. Due to the high selectivity of the process Reactive Ion Etching is nevertheless a reasonable choice for the fabrication of Diffractive Optical Elements. To improve the quality of the etched surfaces a post processing with Ion Beam Etching is developed. Simulations in MATLAB display that the angle dependent removal of the surface during the Ion Beam Etching causes a smoothing of the surface roughness. The positive influence of a post processing on the diffraction efficiency is outlined by measurements. The ion beam post processing leads to an increase of the etching depth. For the fabrication of high efficient Diffractive Optical Elements this has to be taken into account. The relation is investigated and transferred to the fabrication of four-level gratings. Diffraction efficiencies up to 78 % instead of the ideal 81 % underline the practicability of the developed post processing.

  9. Investigation of laser-induced etching of Ti in phosphoric acid

    SciTech Connect

    Nowak, R.J.; Metev, S.M.; Meteva, K.B.; Sepold, G.

    1996-12-31

    Laser-induced chemical etching of Ti in phosphoric acid has been investigated using cw Nd:YAG (1.064 {micro}m) and Argon lasers (514 nm) operating in the fundamental Gaussian mode. Two different regions of etching were observed, which are separated by a characteristic threshold value of the laser power and ascribed to melting of the metal. Below the threshold an exponential dependence of etch rates on laser power suggest a thermally activated etching mechanism. Time-resolved measurements indicate in this region the dissolution of the passivation layer followed by surface etching of the metal grains. After laser illumination an immediate repassivation of the recooled surface stops the etch reaction.

  10. Photoinduced laser etching of a diamond surface

    SciTech Connect

    Kononenko, V V; Komlenok, M S; Pimenov, S M; Konov, V I

    2007-11-30

    Nongraphitising ablation of the surface of a natural diamond single crystal irradiated by nanosecond UV laser pulses is studied experimentally. For laser fluences below the diamond graphitisation threshold, extremely low diamond etching rates (less than 1nm/1000 pulses) are obtained and the term nanoablation is used just for this process. The dependence of the nanoablation rate on the laser fluence is studied for samples irradiated both in air and in oxygen-free atmosphere. The effect of external heating on the nanoablation rate is analysed and a photochemical mechanism is proposed for describing it. (interaction of laser radiation with matter. laser plasma)

  11. Mechanical Properties of Thermoplastic Polyurethanes Laminated Glass Treated by Acid Etching Combined with Cold Plasma

    NASA Astrophysics Data System (ADS)

    Li, Xibao; Lu, Jinshan; Luo, Junming; Zhang, Jianjun; Ou, Junfei; Xu, Haitao

    2014-10-01

    To overcome the problem of interlaminar delamination of thermoplastic polyurethane laminated glass, silicate glass was etched with hydrofluoric acid and thermoplastic polyurethane was then treated with cold plasma. Compared with the untreated samples, the interlaminar shear strength of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 97%, 84% and 341%, respectively. Acid etching combined with cold plasma-treated samples exhibited a higher flexural strength and strain as compared with the untreated samples. The impact energy of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 8.7%, 8.1% and 11.6%, respectively, in comparison with the untreated samples. FT-IR analysis showed that a large number of -C=O, -CO-N and -CO-O-C- groups appeared on the surface of cold plasma-treated thermoplastic polyurethane, which resulted in the formation of hydrogen bonds. SEM results showed that some pittings formed on the surface of the silicate glass treated by acid etching, which resulted in the formation of a three-dimensional interface structure between the silicate glass and polyurethane. Hydrogen bonds combined with the three-dimensional interface between silicate glass and polyurethanes co-improved the mechanical properties of thermoplastic polyurethanes laminated glass.

  12. Rapid analysis of acid in etching and pickling solutions

    SciTech Connect

    Tumbina, V.P.; Chinokalov, V.Ya.

    1995-02-01

    A computational method for determining sulfuric and hydrochloric acids in two-component etching solutions has been proposed. The method makes use of linear relationships, assuming that the sum of free and bound acid in solution remains constant.

  13. Five-year retrospective radiographic follow-up study of dental implants with sandblasting with large grit, and acid etching-treated surfaces

    PubMed Central

    2015-01-01

    Objectives The purpose of this study is to evaluate five-year radiographic follow-up results of the Korean sandblasting with large grit, and acid etching (SLA)-treated implant system. Materials and Methods The subjects of the study are 54 patients who have been followed-up to date, of the patients who underwent implant surgery from May 1, 2009 to April 30, 2011. In all, 176 implant placements were performed. Radiographs were taken before the first surgery, immediately after the first and second surgeries, immediately and six months after the final prosthesis installation, and every year after that. Bone loss was evaluated by the method suggested by Romanos and Nentwig. Results A total of 176 implant placements were performed-122 in men and 54 in women. These patients have been followed-up for an average of 4.9 years. In terms of prosthetic appliances, there were 156 bridges and 20 single prostheses. Nine implants installed in the maxillary molar area, three in the mandibular molar area and two in the maxillary premolar area were included in group M, with bone loss less than 2 mm at the crestal aspect of the implant. Of these, eight implants were single prostheses. In all, six implants failed-four in the mandible and two in the maxilla. All of these failures occurred in single-implant cases. The implant survival rate was 98.1% on the maxilla and 94.3% on the mandible, with an overall survival of 96.6%. Conclusion Within the limitations of this study, implants with the SLA surface have a very superior survival rate in relatively poor bone environments such as the maxilla. PMID:26734558

  14. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  15. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  16. Effects of acid-etching solutions on human enamel and dentin.

    PubMed

    Fanchi, M; Breschi, L

    1995-06-01

    Nine noncarious human molars were extracted and stored in saline solution. Three standard occlusal cavities with beveled enamel margins were prepared on each tooth and etched with the etching solutions of three dentinal adhesive systems: (1) 37% phosphoric acid solution, (2) 4.3% oxalic acid and 2.6% aluminum salts solution, and (3) 10% maleic acid solution. Scanning electron microscopic analysis revealed that all the etching solutions affected the enamel surface morphology. The solution of oxalic acid and aluminum salts removed primarily the prism core material and partially the periphery of the prisms, but did not affect the nonbeveled enamel surface. Phosphoric and maleic acids removed both prism core materials and prism periphery; these specimens also showed areas in which no prism morphology could be detected. These two acids also removed apatite crystals from the prism core of the intact enamel surface. PMID:8602425

  17. Strongly reduced Si surface recombination by charge injection during etching in diluted HF/HNO3.

    PubMed

    Greil, Stefanie M; Schöpke, Andreas; Rappich, Jörg

    2012-08-27

    Herein, we investigate the behaviour of the surface recombination of light-induced charge carriers during the etching of Si in alkaline (KOH) and acidic etching solutions of HF/HNO(3)/CH(3)COOH (HNA) or HF/HNO(3)/H(3)PO(4) (HNP) at different concentration ratios of HF and HNO(3) by means of photoluminescence (PL) measurements. The surface recombination velocity is strongly reduced during the first stages of etching in HF/HNO(3)-containing solutions pointing to a interface well passivated by the etching process, where a positive surface charge is induced by hole injection from NO-related surface species into the Si near-surface region (back surface field effect). This injected charge leads to a change in band bending by about 150 mV that repulses the light-induced charge carriers from the surface and therefore enhances the photoluminescence intensity, since non-radiative surface recombination is reduced. PMID:22761060

  18. Direct observation of silicon surface etching by water with scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Pietsch, G. J.; Köhler, U.; Henzler, M.

    1992-09-01

    One of the key processes in wet chemical preparation of silicon surfaces for device fabrication is a final rinsing step with water after oxide removal and hydrogen-termination with hydrofluoric acid. On rinsing at elevated temperature (boiling water) the slow statistical oxidation of the surface known from conventional treatment with water at room temperature is replaced by a rapid anisotropic etching attack. On Si(111) scanning tunneling microscopy shows characteristic triangular etch defects and flat (111) terraces separated by monatomic steps along <0 overline11>. The resulting surface is chemically homogeneous without any oxide. Structure and removal mechanism are compared to NH 4F-etched samples.

  19. Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

    PubMed

    Reshak, A H; Shahimin, M M; Shaari, S; Johan, N

    2013-11-01

    The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells. PMID:24139943

  20. Optical properties of micromachined polysilicon reflective surfaces with etching holes

    NASA Astrophysics Data System (ADS)

    Zou, Jun; Byrne, Colin; Liu, Chang; Brady, David J.

    1998-08-01

    MUMPS (Multi-User MEMS Process) is receiving increasingly wide use in micro optics. We have investigated the optical properties of the polysilicon reflective surface in a typical MUMPS chip within the visible light spectrum. The effect of etching holes on the reflected laser beam is studied. The reflectivity and diffraction patterns at five different wavelengths have been measured. The optical properties of the polysilicon reflective surface are greatly affected by the surface roughness, the etching holes, as well as the material. The etching holes contribute to diffraction and reduction of reflectivity. This study provides a basis for optimal design of micromachined free-space optical systems.

  1. Surface engineering on CeO2 nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation

    NASA Astrophysics Data System (ADS)

    Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

    2015-07-01

    Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications.Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications. Electronic supplementary information (ESI) available: Diameter distributions of as-prepared and etched samples, optical images, specific catalytic data of CO oxidation and comparison of CO oxidation. See DOI: 10.1039/c5nr01846c

  2. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    PubMed Central

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

    0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  3. Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

    PubMed

    Song, Qingfang

    2015-05-01

    Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result. PMID:25771134

  4. Optimal conditions for the preparation of superhydrophobic surfaces on al substrates using a simple etching approach

    NASA Astrophysics Data System (ADS)

    Ruan, Min; Li, Wen; Wang, Baoshan; Luo, Qiang; Ma, Fumin; Yu, Zhanlong

    2012-07-01

    Many methods have been proposed to develop the fabrication techniques for superhydrophobic surfaces. However, such techniques are still at their infant stage and suffer many shortcomings. In this paper, the superhydrophobic surfaces on an Al substrate were prepared by a simple etching method. Effects of etching time, modifiers, and modification concentration and time were investigated, and optimal conditions for the best superhydrophobicity were studied. It was demonstrated that for etching the aluminum plate in Beck's dislocation, if the etching time was 15 s, modifier was Lauric acid-ethanol solution, and modification concentration and time was 5% and 1.5 h, respectively, the surface exhibited a water contact angle as high as 167.5° and a contact angle hysteresis as low as 2.3°.

  5. Novel Surface Reaction Model in Dry-Etching Process Simulator

    NASA Astrophysics Data System (ADS)

    Misaka, Akio; Harafuji, Kenji; Kubota, Masafumi; Nomura, Noboru

    1992-12-01

    A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of adsorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by adsorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been developed. The simulator is applied to silicon-dioxide trench etchings made by hydrofluorocarbon gases. First, micro-loading effects in an important ion-assisted etching process are studied. It is confirmed that the micro-loading effect is due to the shortage of supplied active radicals inside the trench structure. Secondly, the competitive process between etching and deposition is examined. The side-wall protection phenomena resulting from the process are well simulated.

  6. Etching of silicon surfaces using atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Paetzelt, H.; Böhm, G.; Arnold, Th

    2015-04-01

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min-1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets.

  7. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  8. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin.

    PubMed

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  9. Surface Modification of Nitinol by Chemical and Electrochemical Etching

    NASA Astrophysics Data System (ADS)

    Yang, Zhendi; Wei, Xiaojin; Cao, Peng; Gao, Wei

    2013-07-01

    In this paper, Nitinol, an equiatomic binary alloy of nickel and titanium, was surface modified for its potential biomedical applications by chemical and electrochemical etching. The main objective of the surface modification is to reduce the nickel content on the surface of Nitinol and simultaneously to a rough surface microstructure. As a result, better biocompatibility and better cell attachment would be achieved. The effect of the etching parameters was investigated, using scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectrometry (XPS). The corrosion property of modified Nitinol surfaces was investigated by electrochemical work station. After etching, the Ni content in the surface layer has been reduced and the oxidation of Ti has been enhanced.

  10. Surface photovoltage studies of Si nanocrystallites prepared by electrochemical etching

    NASA Astrophysics Data System (ADS)

    Patel, B. K.; Rath, S.; Sahu, S. N.

    2006-06-01

    Nanocrystalline Si has been prepared by anodic etching of Si in an electrolyte consisting of ethanol and HF. The structure and surface morphology have been studied using transmission electron microscopy which reveal the cubic structure and porous morphology of Si nanocrystals (NCs). Electrochemical etching has resulted in surface oxidation of Si NCs as confirmed from X-ray photoelectron spectroscopic measurements. The average size of the Si NCs has been estimated from the line broadening analysis of the Raman scattering. Unique optical transitions associated with porous Si/SiO2 quantum well (QW) like structure has been investigated by surface photovoltage (SPV) measurements.

  11. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    PubMed Central

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  12. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    PubMed

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  13. Change in surface morphology of polytetrafluoroethylene by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Takahashi, Tomohiro; Hirano, Yuki; Takasawa, Yuya; Gowa, Tomoko; Fukutake, Naoyuki; Oshima, Akihiro; Tagawa, Seiichi; Washio, Masakazu

    2011-02-01

    Polytetrafluoroethylene (PTFE) was exposed to Ar, CF 4, N 2 and O 2 plasmas using a reactive ion etching facility. After the exposure, the change in the surface morphology of PTFE was examined and characterization studies were performed for the etching rate, surface roughness, radical yields, chemical structures, water repellency and so on. The etching rates of Ar, CF 4, N 2 and O 2 plasmas were 0.58, 7.2, 4.4 and 17 μm/h, respectively. It was observed that needle-like nano-fiber structures on the surface were irregularly fabricated by the CF 4 plasma. In addition, when the water repellency of exposed samples was evaluated by contact angle, they showed super-hydrophobic properties: contact angle over 150°.

  14. Acid Solutions for Etching Corrosion-Resistant Metals

    NASA Technical Reports Server (NTRS)

    Simmons, J. R.

    1982-01-01

    New study characterized solutions for etching austenitic stainless steels, nickel-base alloys, and titanium alloys (annealed). Solutions recommended for use remove at least 0.4 mil of metal from surface in less than an hour. Solutions do not cause intergranular attack on metals for which they are effective, when used under specified conditions.

  15. Halogens on Semiconductor Surfaces: Adsorption, Oxidation, and Etching.

    NASA Astrophysics Data System (ADS)

    Stepniak, Frank

    This dissertation presents studies of Si, GaAs, and InP surfaces following exposure to the halogens Cl _2 and Br_2. Synchrotron radiation photoemission is used to investigate the oxidation states of Si near the Si/SiO_2 interface as a function of Cl_2 exposure. Oxidation of highly ordered surfaces shows no dependence of the oxidation state concentration on Cl_2 inclusion in the gas mixture. For less-than-ideal Si surfaces, oxidation with O_2 -only results in a broader transition region, and presumably, inferior electrical properties. The addition of Cl_2 in the oxidizing gas reduced the concentration of intermediate oxides by a factor of two for these disordered starting Si surfaces. A new feature is also measured from Cl-Si bonds that we associate with passivation of Si defects at the oxide interface. The adsorption and reactivity of Br_2 and Cl_2 on GaAs(110) and InP(110) was studied in the temperature range of 25 K < T < 625 K with photoemission spectroscopy and scanning tunneling microscopy. Initial halogen adsorption was dissociative at all temperatures and we find that a simple model where the halogen atoms bond to a single Ga or As surface site can not account for the complex surface chemistry and morphology. Thermally-activated etching was observed after warming a surface with chemisorbed Br or Cl. Etching resulted from the formation and eventual temperature dependent desorption of the trihalides of Ga and As. For halogen exposures where T < 650 K, monohalide-like surface bonding persist during the etching process and the etched surface is rough. For T > 700 K, the surface is essentially free of halogen and etching occurs in a nearly layer-by-layer fashion.

  16. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    NASA Astrophysics Data System (ADS)

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-02-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.

  17. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching.

    PubMed

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  18. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  19. Preliminary surface analysis of etched, bleached, and normal bovine enamel

    SciTech Connect

    Ruse, N.D.; Smith, D.C.; Torneck, C.D.; Titley, K.C. )

    1990-09-01

    X-ray photoelectron spectroscopic (XPS) and secondary ion-mass spectroscopic (SIMS) analyses were performed on unground un-pumiced, unground pumiced, and ground labial enamel surfaces of young bovine incisors exposed to four different treatments: (1) immersion in 35% H2O2 for 60 min; (2) immersion in 37% H3PO4 for 60 s; (3) immersion in 35% H2O2 for 60 min, in distilled water for two min, and in 37% H3PO4 for 60 s; (4) immersion in 37% H3PO4 for 60 s, in distilled water for two min, and in 35% H2O2 for 60 min. Untreated unground un-pumiced, unground pumiced, and ground enamel surfaces, as well as synthetic hydroxyapatite surfaces, served as controls for intra-tooth evaluations of the effects of different treatments. The analyses indicated that exposure to 35% H2O2 alone, besides increasing the nitrogen content, produced no other significant change in the elemental composition of any of the enamel surfaces investigated. Exposure to 37% H3PO4, however, produced a marked decrease in calcium (Ca) and phosphorus (P) concentrations and an increase in carbon (C) and nitrogen (N) concentrations in unground un-pumiced specimens only, and a decrease in C concentration in ground specimens. These results suggest that the reported decrease in the adhesive bond strength of resin to 35% H2O2-treated enamel is not caused by a change in the elemental composition of treated enamel surfaces. They also suggest that an organic-rich layer, unaffected by acid-etching, may be present on the unground un-pumiced surface of young bovine incisors. This layer can be removed by thorough pumicing or by grinding. An awareness of its presence is important when young bovine teeth are used in a model system for evaluation of resin adhesiveness.

  20. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    NASA Astrophysics Data System (ADS)

    Stráský, Josef; Havlíková, Jana; Bačáková, Lucie; Harcuba, Petr; Mhaede, Mansour; Janeček, Miloš

    2013-09-01

    Presented work aims at multi-method characterization of combined surface treatment of Ti-6Al-4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  1. Surface microroughness of ion-beam etched optical surfaces

    SciTech Connect

    Savvides, N.

    2005-03-01

    Ion-beam etching (IBE) and ion-beam figuring techniques using low-energy ion-beam sources have been applied for more than ten years in the fabrication and finishing of extremely smooth high-performance optics. We used optical interferometric techniques and atomic force microscopy to study the evolution of the surface root-mean-square (rms) microroughness, Rq, as a function of depth of a material removed (0-3000 nm) by a broad ion-beam source (Ar{sup +} ions of energy 600 eV and ion current density of 1 mA cm{sup -2}). Highly polished samples of fused silica and Zerodur (Rq{approx}3.5 A) showed a small decrease in microroughness (to 2.5 A) after 3000-nm IBE removal while an ultrapolished single-crystal sapphire sample (Rq{approx}1 A rms) retained its very low microroughness during IBE. Power spectral density functions over the spatial frequency interval of measurement (f=5x10{sup -3}-25 {mu}m{sup -1}) indicate that the IBE surfaces have minimal subsurface damage and low optical scatter.

  2. Surface microroughness of ion-beam etched optical surfaces

    NASA Astrophysics Data System (ADS)

    Savvides, N.

    2005-03-01

    Ion-beam etching (IBE) and ion-beam figuring techniques using low-energy ion-beam sources have been applied for more than ten years in the fabrication and finishing of extremely smooth high-performance optics. We used optical interferometric techniques and atomic force microscopy to study the evolution of the surface root-mean-square (rms) microroughness, Rq, as a function of depth of a material removed (0-3000nm ) by a broad ion-beam source (Ar+ ions of energy 600eV and ion current density of 1mAcm-2). Highly polished samples of fused silica and Zerodur (Rq˜3.5Å) showed a small decrease in microroughness (to 2.5Å) after 3000-nm IBE removal while an ultrapolished single-crystal sapphire sample (Rq˜1Årms) retained its very low microroughness during IBE. Power spectral density functions over the spatial frequency interval of measurement (f=5×10-3-25μm-1) indicate that the IBE surfaces have minimal subsurface damage and low optical scatter.

  3. Scanning Acoustic Microscopy Investigation of Frequency-Dependent Reflectance of Acid-Etched Human Dentin Using Homotopic Measurements

    PubMed Central

    Marangos, Orestes; Misra, Anil; Spencer, Paulette; Katz, J. Lawrence

    2013-01-01

    Composite restorations in modern restorative dentistry rely on the bond formed in the adhesive-infiltrated acid-etched dentin. The physical characteristics of etched dentin are, therefore, of paramount interest. However, characterization of the acid-etched zone in its natural state is fraught with problems stemming from a variety of sources including its narrow size, the presence of water, heterogeneity, and spatial scale dependency. We have developed a novel homotopic (same location) measurement methodology utilizing scanning acoustic microscopy (SAM). Homotopic measurements with SAM overcome the problems encountered by other characterization/ imaging methods. These measurements provide us with acoustic reflectance at the same location of both the pre- and post-etched dentin in its natural state. We have applied this methodology for in vitro measurements on dentin samples. Fourier spectra from acid-etched dentin showed amplitude reduction and shifts of the central frequency that were location dependent. Through calibration, the acoustic reflectance of acid-etched dentin was found to have complex and non-monotonic frequency dependence. These data suggest that acid-etching of dentin results in a near-surface graded layer of varying thickness and property gradations. The measurement methodology described in this paper can be applied to systematically characterize mechanical properties of heterogeneous soft layers and interfaces in biological materials. PMID:21429849

  4. High performance surface-emitting lasers with dry etched facets

    NASA Astrophysics Data System (ADS)

    Ou, S. S.; Jansen, M.; Yang, J. J.; Sergant, M.; Mawst, L. J.; Botez, D.; Roth, T. J.; Hess, C.; Tu, C.

    1992-12-01

    The fabrication, performance characteristics, and applications of monolithic in-plane surface-emitting lasers (IPSELs) with dry-etched 45-degree micromirrors are reviewed. Several types of such laser diode structures in both junction-up and junction-down configurations are considered. The performance goals for IPSELs with 45-degree micromirrors are high power and efficiency, high duty cycle and CW operation, good reliability, and high fabrication yields. The proposed approach for achieving these goals includes uniform quantum well material growth and dry etching of the laser micromirrors with tight fabrication tolerances.

  5. Acid etching does not improve CoCrMo implant osseointegration in a canine implant model.

    PubMed

    Jakobsen, Stig S; Baas, Jorgen; Jakobsen, Thomas; Soballe, Kjeld

    2010-01-01

    Induction of bone ingrowth by topographical changes to implant surfaces is an attractive concept. Topographical modifications achieved by acid etching are potentially applicable to complex 3D surfaces. Using clinically relevant implant models, we explored the effect of wet etching porous bead-coated CoCrMo. The study was designed as two paired animal experiments with 10 dogs. Each dog received four implants; one in each medial femoral condyle (loaded 0.75-mm-gap model) and one in each proximal tibia (press-fit). The implants were observed for 6 weeks and were evaluated by biomechanical pushout tests and histomorphometry. We found that wet etching porous bead-coated CoCrMo implants failed to improve implant performance. Moreover, a tendency towards increased fibrous tissue formation, decreased new bone formation, and decreased mechanical fixation was observed. Surface topography on implants is able to stimulate bone-forming cells, but the clinical performance of an implant surface perhaps relies more on 3D geometrical structure and biocompatibility. Caution should be exercised regarding the results of wet etching of porous bead-coated CoCrMo and there is a need for more preclinical trials. PMID:20544657

  6. Temperature Rise Induced by Light Curing Unit Can Shorten Enamel Acid-Etching Time

    PubMed Central

    Najafi Abrandabadi, Ahmad; Sheikh-Al-Eslamian, Seyedeh Mahsa; Panahandeh, Narges

    2015-01-01

    Objectives: The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED) light curing unit on the enamel etching time. Materials and Methods: Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously). The micro shear bond strength (μSBS) of composite resin to enamel was measured. Results: The mean μSBS values ± standard deviation were 51.28±2.35, 40.47±2.75 and 50.00±2.59 MPa in groups 1, 2 and 3, respectively. There was a significant difference between groups 1 and 2 (P=0.013) and between groups 2 and 3 (P=0.032) in this respect, while there was no difference between groups 1 and 3 (P=0.932). Conclusion: Simultaneous application of phosphoric acid gel over enamel surface and light irradiation using a LED light curing unit decreased enamel etching time to five seconds without compromising the μSBS. PMID:27559352

  7. Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

    PubMed Central

    Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

    2013-01-01

    Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

  8. Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Bui, P. V.; Isohashi, A.; Kizaki, H.; Sano, Y.; Yamauchi, K.; Morikawa, Y.; Inagaki, K.

    2015-11-01

    Hydrofluoric acid (HF) etching of the SiC surface assisted by Pt as a catalyst is investigated using density functional theory. Etching is initiated by the dissociative adsorption of HF on step-edge Si, forming a five-fold coordinated Si moiety as a metastable state. This is followed by breaking of the Si-C back-bond by a H-transfer process. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction.

  9. PHOSPHATED, ACID-ETCHED IMPLANTS DECREASE MINERAL APPOSITION RATES NEAR IMPLANTS IN CANINES

    PubMed Central

    Foley, Christine Hyon; Kerns, David G.; Hallmon, William W.; Rivera-Hidalgo, Francisco; Nelson, Carl J.; Spears, Robert; Dechow, Paul C.; Opperman, Lynne A.

    2010-01-01

    Purpose: This study evaluated the effects of phosphate-coated titanium on mineral apposition rate (MAR) and new bone-to-implant contact (BIC) in canines. Materials and Methods: 2.2 mm × 4 mm electrolytically phosphated or non-phosphated titanium implants with acid-etched surfaces were placed in 48 mandibular sites in 6 foxhounds. Tetracycline and calcein dyes were administered 1 week after implant placement and 1 week before sacrifice. At twelve weeks following implant healing, animals were sacrificed. MAR and BIC were evaluated using fluorescence microscopy. Light microscopic and histological evaluation was performed on undecalcified sections. Results: Microscopic evaluation showed the presence of healthy osteoblasts lining bone surfaces near implants. Similar bone-to-implant contact was observed in phosphated and non-phosphated titanium implant sites. MAR was significantly higher near non-phosphated titanium implant surfaces than the phosphated titanium samples. No significant differences were found between dogs or implant sites. Discussion and Conclusion: Acid-etched only implants showed significantly higher mineral apposition rates compared to acid-etched, phosphate-coated implants. PMID:20369085

  10. Focused electron beam induced etching of copper in sulfuric acid solutions

    NASA Astrophysics Data System (ADS)

    Boehme, Lindsay; Bresin, Matthew; Botman, Aurélien; Ranney, James; Hastings, J. Todd

    2015-12-01

    We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

  11. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  12. Micro/nanofabrication of poly(L-lactic acid) using focused ion beam direct etching

    NASA Astrophysics Data System (ADS)

    Oyama, Tomoko Gowa; Hinata, Toru; Nagasawa, Naotsugu; Oshima, Akihiro; Washio, Masakazu; Tagawa, Seiichi; Taguchi, Mitsumasa

    2013-10-01

    Micro/nanofabrication of biocompatible and biodegradable poly(L-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  13. Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

    PubMed

    Rezayi, Toktam; Entezari, Mohammad H

    2016-02-01

    Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique. PMID:26513735

  14. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity

  15. Bone contact around acid-etched implants: a histological and histomorphometrical evaluation of two human-retrieved implants.

    PubMed

    Degidi, Marco; Petrone, Giovanna; Iezzi, Giovanna; Piattelli, Adriano

    2003-01-01

    The surface characteristics of dental implants play an important role in their clinical success. One of the most important surface characteristics of implants is their surface topography or roughness. Many techniques for preparing dental implant surfaces are in clinical use: turning, plasma spraying, coating, abrasive blasting, acid etching, and electropolishing. The Osseotite surface is prepared by a process of thermal dual etching with hydrochloric and sulfuric acid, which results in a clean, highly detailed surface texture devoid of entrapped foreign material and impurities. This seems to enhance fibrin attachment to the implant surface during the clotting process. The authors retrieved 2 Osseotite implants after 6 months to repair damage to the inferior alveolar nerve. Histologically, both implants appeared to be surrounded by newly formed bone. No gaps or fibrous tissues were present at the interface. The mean bone-implant contact percentage was 61.3% (+/- 3.8%). PMID:12614080

  16. Acid-etched Fabry-Perot micro-cavities in optical fibres

    NASA Astrophysics Data System (ADS)

    Machavaram, V. R.; Badcock, R. A.; Fernando, G. F.

    2007-07-01

    Significant progress has been made in recent years on the design and fabrication of optical fibre-based sensor systems for applications in structural health monitoring. Two sensor designs have tended to dominate namely, fibre Bragg gratings and extrinsic fibre Fabry-Perot sensors. However, the cost and time associated with these sensors is relatively high and as a consequence, the current paper describes a simple procedure to fabricate intrinsic fibre Fabry-Perot interferometric strain sensors. The technique involves the use of hydrofluoric acid to etch a cavity in a cleaved optical fibre. Two such etched cavities were fusion spliced to create an intrinsic fibre Fabry-Perot cavity. The feasibility of using this device for strain monitoring was demonstrated. Excellent correlation was obtained between the optical and surface-mounted electrical resistance strain gauge.

  17. Color Stability of Enamel following Different Acid Etching and Color Exposure Times

    PubMed Central

    Jahanbin, Arezoo; Basafa, Mohammad; Moazzami, Mostafa; Basafa, Behnoush; Eslami, Neda

    2014-01-01

    Background and aims. The aim of this study was to evaluate the effect of different etching times on enamel color stability after immediate versus delayed exposure to colored artificial saliva (CAS). Materials and methods. Human first premolars were divided into five groups of twenty. A colorimeter was used according to the CIE system on the mid-buccal and mid-lingual surfaces to evaluate initial tooth color. Samples in group A remained unetched. In groups B to E, buccal and lingual surfaces were initially etched with phosphoric acid for 15 and 60 seconds, respectively. Then, the samples in groups A and C were immersed in colored artificial saliva (cola+saliva). In group B, the teeth were immersed in simple artificial saliva (AS). Samples in groups D and E were immersed in AS for 24 and 72 hours, respectively before being immersed in colored AS. The teeth were immersed for one month in each solution before color measurement. During the test period, the teeth were retrieved from the staining solution and stored in AS for five minutes. This was repeated 60 times. Color changes of buccal and lingual surfaces were calculated. Kruskal-Wallis and Wilcoxon tests were used for statistical analysis (α ≤0.05). Results. There were no significant differences between the groups in term of ΔE of buccal (P = 0.148) and lingual surfaces (P = 0.73). Conclusion. Extended time of etching did not result in significant enamel color change. Immediate and delayed exposure of etched enamel to staining solutions did not result in clinically detectable tooth color changes. PMID:25093048

  18. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  19. Etch pits of precipitates in CdZnTe crystals on (1 1 1) B surface

    NASA Astrophysics Data System (ADS)

    Sheng, F. F.; Cui, X. P.; Sun, S. W.; Yang, J. R.

    2012-09-01

    The etch pits of Te-rich and Cd-rich precipitates of the Cd0.94Zn0.04Te crystals situated on (1 1 1) B surface were distinguished from the dislocation etch pits and evaluated by using Everson Etching for the first time. By using an IR transmission microscope and a scanning electron microscope (SEM) with an energy-dispersive x-ray spectroscopy (EDX) analytical system, the characteristics of the precipitate etch pits were studied. The etch pit of the Te-rich precipitate which would influence the etch rate of its ambient materials shows the shape of triangle or hexagon with a rough surface different from the cone-shaped triangle etch pit as the dislocation etch pit. The etch pit of the Cd-rich precipitate is always enwrapped by large quantities of dislocation etch pits, which indicates the existence of the damaged layers around the Cd-rich precipitate. Base on the characteristics of the precipitate etch pits, the areal densities of the precipitates with the size larger than 5 μm on the substrate surfaces can be measured by the optical microscope with a magnification of 50 and under Nomarski mode. Compared with the conventional measurement method based on the IR transmission microscope (IRTM), the method of the etch pit observation (EPO) is more practical for measuring the areal densities of the precipitates of CdZnTe substrates.

  20. Formation of plasma induced surface damage in silica glass etching for optical waveguides

    NASA Astrophysics Data System (ADS)

    Choi, D. Y.; Lee, J. H.; Kim, D. S.; Jung, S. T.

    2004-06-01

    Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit.

  1. Apparatus For Etching Or Depositing A Desired Profile Onto A Surface

    DOEpatents

    Rushford, Michael C.; Britten, Jerald A.

    2004-05-25

    An apparatus and method for modifying the surface of an object by contacting said surface with a liquid processing solution using the liquid applicator geometry and Marangoni effect (surface tension gradient-driven flow) to define and confine the dimensions of the wetted zone on said object surface. In particular, the method and apparatus involve contouring or figuring the surface of an object using an etchant solution as the wetting fluid and using real-time metrology (e.g. interferometry) to control the placement and dwell time of this wetted zone locally on the surface of said object, thereby removing material from the surface of the object in a controlled manner. One demonstrated manifestation is in the deterministic optical figuring of thin glasses by wet chemical etching using a buffered hydrofluoric acid solution and Marangoni effect.

  2. Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

    1998-01-01

    The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for

  3. Ion beam sputtering of fluoropolymers. [etching polymer films and target surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.

  4. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    PubMed Central

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20% ± 10.89%) was much greater than those of machined (33.58% ± 8.63%), SLA (58.47% ± 12.89), or ANO Ti (59.62% ± 18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  5. Cell adhesion and in vivo osseointegration of sandblasted/acid etched/anodized dental implants.

    PubMed

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20%±10.89%) was much greater than those of machined (33.58%±8.63%), SLA (58.47%±12.89), or ANO Ti (59.62%±18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  6. Washable and wear-resistant superhydrophobic surfaces with self-cleaning property by chemical etching of fibers and hydrophobization.

    PubMed

    Xue, Chao-Hua; Li, Ya-Ru; Zhang, Ping; Ma, Jian-Zhong; Jia, Shun-Tian

    2014-07-01

    Superhydrophobic poly(ethylene terephthalate) (PET) textile surfaces with a self-cleaning property were fabricated by treating the microscale fibers with alkali followed by coating with polydimethylsiloxane (PDMS). Scanning electron microscopy analysis showed that alkali treatment etched the PET and resulted in nanoscale pits on the fiber surfaces, making the textiles have hierarchical structures. Coating of PDMS on the etched fibers affected little the roughening structures while lowered the surface energy of the fibers, thus making the textiles show slippery superhydrophobicity with a self-cleaning effect. Wettability tests showed that the superhydrophobic textiles were robust to acid/alkaline etching, UV irradiation, and long-time laundering. Importantly, the textiles maintained superhydrophobicity even when the textiles are ruptured by severe abrasion. Also colorful images could be imparted to the superhydrophobic textiles by a conventional transfer printing without affecting the superhydrophobicity. PMID:24942304

  7. Aspects of native oxides etching on n-GaSb(1 0 0) surface

    NASA Astrophysics Data System (ADS)

    Cotirlan, C.; Ghita, R. V.; Negrila, C. C.; Logofatu, C.; Frumosu, F.; Lungu, G. A.

    2016-02-01

    Gallium antimonide (GaSb) is the basis of the most photovoltaic and thermophotovoltaic (TPV) systems and its innovative technological aspects based on modern ultra-high vacuum techniques are in trend for device achievement. The real surface of GaSb is modified by technological processes that can conduce to problems related to the reproducible control of its surface properties. The GaSb surface is reactive in atmosphere due to oxygen presence and exhibits a native oxide layer. The evolution of native oxides during the ion sputtering, chemical etching and thermal annealing processes for preparing the surface is presented in detailed way. Ratios of surface constituents are obtained by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Moreover, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM) and Low-Energy Electron Diffraction (LEED) are used for characterization. The surface stoichiometry is changed using a specific etchant (e.g. citric acid) at different etching time and is analyzed by ARXPS, SEM, EDS and AFM methods. The experimental results provide useful information regarding surface native oxides characteristics on n-GaSb(1 0 0) to be taken into account for development of low resistance contacts for TPV devices based on GaSb alloy.

  8. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    NASA Astrophysics Data System (ADS)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  9. Manganese-tuned chemical etching of a platinum-copper nanocatalyst with platinum-rich surfaces

    NASA Astrophysics Data System (ADS)

    Huang, Y. Y.; Zhao, T. S.; Zhao, G.; Yan, X. H.; Xu, K.

    2016-02-01

    This work presents a modified chemical etching strategy to fabricate binary metal nanocatalysts with large active areas. The strategy employs PtCu alloy particles with Pt-rich outer layers as the precursor and manganese species to manipulate the acid leaching processes. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy techniques are used to analyze the catalyst structures and the tuning mechanism of manganese species during etching. It is found that the introduction of manganese species allows more Pt active sites to be formed onto the catalyst surface after etching, possibly due to reduction in the number of Pt atoms enclosed inside particles. The electrochemically active surface area of the synthetic MnA-PtCu/C catalyst increases by 90% relative to commercial Pt/C catalyst. As a result of the increase in active areas and the additional promotion effects by Cu, the MnA-PtCu/C catalyst reveals a methanol oxidation activity 1.7 and 4.0 times higher than that of the synthetic PtCu/C and commercial Pt/C catalysts, respectively.

  10. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    NASA Astrophysics Data System (ADS)

    Costescu, Ruxandra M.; Deneke, Christoph; Thurmer, Dominic J.; Schmidt, Oliver G.

    2009-12-01

    The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  11. Influence of Interface Structure on Chemical Etching Process for Air Gap of Microelectromechanical System Based on Surface Micromachining

    NASA Astrophysics Data System (ADS)

    Yoon, Young; Kim, Joon; Polla, Dennis.; Shin, Young

    1998-12-01

    This paper analyses the problems posed by the interface structure during chemical etching by Hydro-fluoric (HF) acid for creating air gaps in microelectromechnical system (MEMS) devices using PZT(53/47) films and surface micromachining techniques. In order to investigate the influence of interface structure on the HF chemical etching process, Pt/PZT/Pt/Ti/TiO2/polysilicon/Si3N4/PSG/Si (Samples A and C) and Pt/PZT/RuO2/Ru/Si3N4/PSG/Si (Sample B) structures were fabricated. These structures are selected for a microcantilever beam and/or an uncooled IR detectors fabricated with PZT piezoelectric/pyroelectric films based on the surface micromachining technique. Both need etching for the removal of phosphor silicate glass (PSG) to create an air gap. If the devices had a poor interface structure, they would fail during the HF chemical etching process because the poor interface structure would act as a kind of penetration path for etching acid leading to unwanted etching. Therefore, it is very important to investigate the interface structure to fabricate efficient MEMS devices. In this study two different solutions have been suggested to improve the interface structure. The first is post thermal annealing at 900°C for 30 min. after deposition of polycrystalline silicon for sample A. Secondly, a RuO2/Ru hybrid electrode was deposited on Si3N4 directly instead of on the Pt/Ti/TiO2/Polysilicon electrode, which has Pt/PZT/RuO2/Ru/Si3N4/PSG/Si as the device structure. These two solutions suggest that a dense interface structure increases enhances of success of the chemical etching process of MEMS devices fabricated using PZT films and surface micromachining techniques.

  12. A Comparison of Shear Bond Strengths of Metal and Ceramic Brackets using Conventional Acid Etching Technique and Er:YAG Laser Etching

    PubMed Central

    Yassaei, Sogra; Fekrazad, Reza; Shahraki, Neda; Goldani Moghadam, Mahdjoube

    2014-01-01

    Background and aims. The aim of this study was to compare shear bond strength (SBS) of metal and ceramic brackets bonded to enamel using acid versus Er:YAG laser etching. Materials and methods. Eighty premolars were divided into 4 groups: AM (acid etching/ metal brackets), AC (acid etching/ ceramic brackets), LM (laser etching/ metal brackets) and LC (laser etching/ ceramic brackets). Enamel condition-ing was done using acid in AC and AM and Er:YAG laser in LC and LM. Brackets were debonded with a Dartec machine and the SBSs were determined. Adhesive remnant index was evaluated under a stereomicroscope. Two additional teeth were conditioned with acid and laser for scanning electron microscopy examination. Comparisons of SBS value were done by ANOVA test. Results. statistical analyses showed that SBSs of acid groups were significantly higher than that of laser groups, but dif-ferences between SBS values of AC/ AM and LC/LM were not significant. SEM examination revealed different etching pattern. Conclusion. Low power Er:YAG laser etching offers clinically acceptable SBS which besides its other superiorities to acid etching can be an appropriate alternative for bonding of ceramic brackets. PMID:25024836

  13. Shallow surface etching of organic and inorganic compounds by electrospray droplet impact

    NASA Astrophysics Data System (ADS)

    Hiraoka, Kenzo; Sakai, Yuji; Iijima, Yoshitoki; Asakawa, Daiki; Mori, Kunihiko

    2009-08-01

    The electrospray droplet impact (EDI) was applied to bradykinin, polyethylene terephthalate (PET), SiO 2/Si, and indium phosphide (InP). It was found that bradykinin deposited on the stainless steel substrate was ionized/desorbed without the accumulation of radiation products. The film thickness desorbed by a single collisional event was found to be less than 10 monolayers. In the EDI mass spectra for PET, several fragment ions were observed but the XPS spectra did not change with prolonged cluster irradiation. The etching rate for SiO 2 by EDI was measured to be ˜0.2 nm/min. The surface roughness of InP etched by EDI was found to be one order of magnitude smaller than that etched by 3 keV Ar + for about the same etching depths. EDI is capable of shallow surface etching with little damage left on the etched surface.

  14. Radical surface interactions in industrial silicon plasma etch reactors

    NASA Astrophysics Data System (ADS)

    Cunge, G.; Vempaire, D.; Ramos, R.; Touzeau, M.; Joubert, O.; Bodard, P.; Sadeghi, N.

    2010-06-01

    Silicon etching in Cl2-based plasmas is an important step for the fabrication of IC circuits but the plasma surface interactions involved in this process remain poorly understood. Based on the developments in plasma and reactor wall diagnostics, this paper reviews the recent progress in the understanding of radicals' interactions with surfaces during silicon etching processes. X-ray photoelectron spectroscopy analysis of the reactor walls shows that during Si etching in Cl2/O2 plasmas, the initial Al2O3 chamber walls are coated with a thin SiOCl layer. Broadband absorption spectroscopy with UV light emitting diodes is used to measure the densities of SiClX radicals (X = 0-2) and Cl2 molecules in steady state plasmas running with the chamber walls coated with different materials. To estimate the surface sticking/recombination probability of these radicals on different surfaces, we have performed time-resolved absorption measurements in the afterglow of pulsed discharges. Our work, in agreement with previous results, shows that the Cl2/Cl density ratio in the discharge is driven mainly by the chemical nature of the chamber walls explaining why process drifts are often observed in Cl2/O2 plasmas. The recombination coefficient of Cl atoms on SiOCl surfaces is about 0.007, while it is about 0.1 on clean walls (AlF3). Based on these results, we discuss the best strategy leading to reproducible process control, the present strategy being a systematic reactor cleaning/conditioning between wafers. The SiOCl layer deposition mechanism is then discussed in detail. The sticking coefficient of SiCl on this surface is near unity, while SiCl2 appears to be weakly reactive toward it. Therefore, SiCl (and SiCl+ ions) are the main vectors of Si deposition on the reactor walls, where their subsequent oxidization by O atoms leads to the formation of a SiOCl deposit. Furthermore, we show that SiCl reaction in the plasma volume with Cl2, through the exchange reaction SiCl + Cl2 → Si

  15. In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

    NASA Astrophysics Data System (ADS)

    Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

    2010-02-01

    Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

  16. Reliability evaluation of alumina-blasted/acid-etched versus laser-sintered dental implants.

    PubMed

    Almeida, Erika O; Júnior, Amilcar C Freitas; Bonfante, Estevam A; Silva, Nelson R F A; Coelho, Paulo G

    2013-05-01

    Step-stress accelerated life testing (SSALT) and fractographic analysis were performed to evaluate the reliability and failure modes of dental implant fabricated by machining (surface treated with alumina blasting/acid etching) or laser sintering for anterior single-unit replacements. Forty-two dental implants (3.75 × 10 mm) were divided in two groups (n=21 each): laser sintered (LS) and alumina blasting/acid etching (AB/AE). The abutments were screwed to the implants and standardized maxillary central incisor metallic crowns were cemented and subjected to SSALT in water. Use-level probability Weibull curves and reliability for a mission of 50,000 cycles at 200 N were calculated. Polarized light and scanning electron microscopes were used for failure analyses. The Beta (β) value derived from use-level probability Weibull calculation of 1.48 for group AB/AE indicated that damage accumulation likely was an accelerating factor, whereas the β of 0.78 for group LS indicated that load alone likely dictated the failure mechanism for this group, and that fatigue damage did not appear to accumulate. The reliability was not significantly different (p>0.9) between AB/AE (61 %) and LS (62 %). Fracture of the abutment and fixation screw was the chief failure mode. No implant fractures were observed. No differences in reliability and fracture mode were observed between LS and AB/AE implants used for anterior single-unit crowns. PMID:22843309

  17. Deep GaN etching by inductively coupled plasma and induced surface defects

    SciTech Connect

    Ladroue, J.; Meritan, A.; Boufnichel, M.; Lefaucheux, P.; Ranson, P.; Dussart, R.

    2010-09-15

    GaN etching was studied in Cl{sub 2}/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to depend strongly on bias power. After optimization, an etch rate greater than 1000 nm/min was achieved. A second part of this work is dedicated to the etched surface defects. An original method to estimate GaN dislocation density and to localize nanopipes in the material is presented. Columnar defects could also appear with impurities in the etching reactor. The authors also present a possible formation mechanism of those columnar defects.

  18. HF-(NH₄)₂S₂O₈-HCl Mixtures for HNO₃- and NOx-free Etching of Diamond Wire- and SiC-Slurry-Sawn Silicon Wafers: Reactivity Studies, Surface Chemistry, and Unexpected Pyramidal Surface Morphologies.

    PubMed

    Stapf, André; Gondek, Christoph; Lippold, Marcus; Kroke, Edwin

    2015-04-29

    The wet-chemical treatment of silicon wafers is an important production step in photovoltaic and semiconductor industries. Solutions containing hydrofluoric acid, ammonium peroxodisulfate, and hydrochloric acid were investigated as novel acidic, NOx-free etching mixtures for texturization and polishing of monocrystalline silicon wafers. Etching rates as well as generated surface morphologies and properties are discussed in terms of the composition of the etching mixture. The solutions were analyzed with Raman and UV/vis spectroscopy as well as ion chromatography (IC). The silicon surfaces were investigated by scanning electron microscopy (SEM), confocal laser scanning microscopy (CLSM), diffuse reflection infrared spectroscopy (DRIFT), and X-ray photoelectron spectroscopy (XPS). Surprisingly, pyramidal surface structures were found after etching SiC-slurry as well as diamond wire-sawn monocrystalline Si(100) wafers with hydrochloric acid-rich HF-(NH4)2S2O8-HCl mixtures. Acidic etching solutions are generally not known for anisotropic etching. Thus, the HNO3-free mixtures might allow to replace KOH/i-propanol and similar alkaline solutions for texturization of monosilicon wafers at room temperature with less surface contamination. Besides, common HNO3-based etching mixtures may be replaced by the nitrate-free system, leading to significant economic and ecological advantages. PMID:25826145

  19. Noble Gases and Nitrogen Released from a Lunar Soil Pyroxene Separate by Acid Etching

    NASA Astrophysics Data System (ADS)

    Rider, P. E.

    1993-07-01

    We report initial results from a series of experiments designed to measure recently implanted solar wind (SW) ions in lunar soil mineral grains [1]. An acid-etching technique similar to the CSSE method developed at ETH Zurich was used to make abundance and isotope measurements of the SW noble gas and nitrogen compositions. Among the samples examined was a pyroxene separate from soil 75081. It was first washed with H2O to remove contamination from the sample finger walls and grain surfaces. H2O also acted as a weak acid, releasing gases from near-surface sites. Treatment with H2SO3 followed the water washes. Acid pH (~1.8 to ~1.0) and temperature (~23 degrees C to ~90 degrees C) and duration of acid attack (several minutes to several days) were varied from step to step. Finally, the sample was pyrolyzed in several steps to remove the remaining gases, culminating with a high-temperature pyrolysis at 1200 degrees C. Measurements of the light noble gases were mostly consistent with those from previous CSSE experiments performed on pyroxene [2,3]. It should be noted, however, that the Zurich SEP component was not easily distinguishable in the steps where it was expected to be observed. We suspect our experimental protocol masked the SEP reservoir, preventing us from seeing its distinctive signature. The most interesting results from this sample are its Kr and Xe isotopic and elemental compositions. Pyroxene apparently retains heavy noble gases as well as ilmenite (and plagioclase [4]). The heavy noble gas element ratios from this sample along with those previously reported [5,6] are, however, considerably heavier than the theoretically determined "solar system" values [7,8]. Explanations for the difference include the possibility that the derivations are incorrect, that there is another component of lunar origin mixing with the solar component, or that some type of loss mechanism is altering the noble gas reservoirs of the grains. The Kr and Xe isotopic compositions for

  20. Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching

    NASA Astrophysics Data System (ADS)

    Min, T. H.; Park, B. J.; Kang, S. K.; Gweon, G. H.; Kim, Y. Y.; Yeom, G. Y.

    2009-08-01

    Silicon-on-insulator (SOI) wafers were etched by an energetic chlorine neutral beam obtained by the low-angle forward reflection of an ion beam, and the surface roughness of the etched wafers was compared with that of the SOI wafers etched by an energetic chlorine ion beam. When the ion beam was used to etch the silicon layer of the SOI wafers, the surface roughness was not significantly changed even though the use of higher ion bombardment energy slightly decreased the surface roughness of the SOI wafer. However, when the chlorine neutral beam was used instead of the chlorine ion beam having a similar beam energy, the surface roughness of the SOI wafer was significantly improved compared with that etched by the chlorine ion beam. By etching about 150 nm silicon from the SOI wafer having a 300 nm-thick top silicon layer with the chlorine neutral beam at the energy of 500 eV, the rms surface roughness of 1.5 Å could be obtained with the etch rate of about 750 Å min-1.

  1. Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning

    NASA Astrophysics Data System (ADS)

    Kawase, Tatsuya; Mura, Atsushi; Dei, Katsuya; Nishitani, Keisuke; Kawai, Kentaro; Uchikoshi, Junichi; Morita, Mizuho; Arima, Kenta

    2013-04-01

    We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O2). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the shape of inverted pyramids. The mechanism of this anisotropic etching is proposed to be the enhanced formation of soluble oxide (GeO2) around metals by the catalytic activity of metallic particles, reducing dissolved O2 in water to H2O molecules. Secondly, we apply this metal-assisted chemical etching to the nanoscale patterning of Ge in water using a cantilever probe in an atomic force microscopy setup. We investigate the dependences of probe material, dissolved oxygen concentration, and pressing force in water on the etched depth of Ge(100) surfaces. We find that the enhanced etching of Ge surfaces occurs only when both a metal-coated probe and saturated-dissolved-oxygen water are used. In this study, we present the possibility of a novel lithography method for Ge in which neither chemical solutions nor resist resins are needed.

  2. Inspired superhydrophobic surfaces by a double-metal-assisted chemical etching route

    SciTech Connect

    Chen, Yu; Guo, Zhiguang; Xu, Jiansheng; Shi, Lei; Li, Jing; Zhang, Yabin

    2012-07-15

    Graphical abstract: A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces, showing a good superhydrophobicity with the contact angle of about 170°, and the sliding angle of about 0°. Meanwhile, the potential formation mechanism about it is also presented. Highlights: ► A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces. ► The obtained surfaces show good superhydrophobicity with a high contact angle and low sliding angle. ► The color of the etched substrate dark brown or black and it is so-called black silicon. -- Abstract: Silicon substrates treated by metal-assisted chemical etching have been studied for many years since they could be employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors and detectors. However, to the best of our knowledge, the chemical etching treatment on the same silicon substrate with the assistance of two or more kinds of metals has not been reported. In this paper, we mainly focus on the etching time and finally obtain a series of superhydrophobic silicon surfaces with novel etching structures through two successive etching processes of Cu-assisted and Ag-assisted chemical etching. It is shown that large-scale homogeneous but locally irregular wire-like structures are obtained, and the superhydrophobic surfaces with low hysteresis are prepared after the modifications with low surface energy materials. It is worth noting that the final silicon substrates not only possess high static contact angle and low hysteresis angle, but also show a black color, indicating that the superhydrophobic silicon substrate has an extremely low reflectance in a certain range of wavelengths. In our future work, we will go a step further to discuss the effect of temperature, the size of Cu nanoparticles and solution concentration on the final topography and superhydrophobicity.

  3. Instrumentation With Ultrasonic Scalers Facilitates Cleaning of the Sandblasted and Acid-Etched Titanium Implants.

    PubMed

    Park, Jun-Beom; Lee, Sung-Hoon; Kim, NamRyang; Park, Seojin; Jin, Seong-Ho; Choi, Bong-Kyu; Kim, Kack-Kyun; Ko, Youngkyung

    2015-08-01

    Mechanical instrumentation is widely used to debride dental implants, but this may alter the surface properties of titanium, which in turn may influence bacterial adhesion and make it more difficult to remove the biofilm. This in vitro study was performed (1) to assess the amount of biofilm formation on a sand-blasted and acid-etched titanium fixture treated with ultrasonic scalers with metal, plastic, and carbon tips and (2) to evaluate how this treatment of titanium surfaces affects implant cleaning by brushing with dentifrice. The titanium fixtures were treated with various ultrasonic scaler tips, and surface roughness parameters were measured by confocal microscopy. Biofilm was formed on the treated fixtures by using pooled saliva from 10 subjects, and the quantity of the adherent bacteria was compared with crystal violet assay. The fixture surfaces with biofilm were brushed for total of 30 seconds with a toothbrush with dentifrice. The bacteria remaining on the brushed fixture surfaces were quantified by scanning electron microscopy. Surface changes were evident, and the changes of the surfaces were more discernible when metal tips were used. A statistically significant decrease in roughness value (arithmetic mean height of the surface) was seen in the 2 metal-tip groups and the single plastic-tip group. After brushing with dentifrice, the treated surfaces in all the treatment groups showed significantly fewer bacteria compared with the untreated surfaces in the control group, and the parts of the surfaces left untreated in the test groups. Within the limits of this study, treatment of titanium fixture surfaces with ultrasonic metal, plastic, or carbon tips significantly enhanced the bacterial removal efficacy of brushing. Thorough instrumentation that smooths the whole exposed surface may facilitate maintenance of the implants. PMID:24552131

  4. Experimental analysis of the surface roughness evolution of etched glass for micro/nanofluidic devices

    NASA Astrophysics Data System (ADS)

    Ren, J.; Ganapathysubramanian, B.; Sundararajan, S.

    2011-02-01

    Roughness of channel surfaces, both deterministic and random, is known to affect the fluid flow behavior in micro/nanoscale fluidic devices. This has relevance particularly for applications involving non-Newtonian fluids, such as in biomedical lab-on-chip devices. While several studies have investigated effects of relative large, deterministic surface structures on fluid flow, the effect of random roughness on microfluidic flow remains relatively unexplored. In this study, the effects of processing conditions for wet etching of glass including etching time and etching orientation on centre-line average (Ra) and the autocorrelation length (ACL) were investigated. Statistical distribution of the roughness was also studied. Results indicated that ACL can be tailored in the range of 1-4 µm by changing etching time in horizontal etching while Ra was found to increase weakly with etching time in all three etching orientations. Analysis of the experimental data using the Kolmogorov-Smirnov goodness-of-fit hypothesis test shows that the glass surface roughness does not follow a Gaussian distribution, as is typically assumed in the literature. Instead, the T location-scale distribution fits the roughness data with 1.11% error. These results provide promising insights into tailoring surface roughness for improving microfluidic devices.

  5. Characterization of Etch Pit Formation via the Everson-Etching Method on CdZnTe Crystal Surfaces from the Bulk to the Nano-Scale

    SciTech Connect

    Teague, L.; Duff, M.; Cadieux, J.; Shick, C.

    2010-09-24

    A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

  6. An investigation of RF sputter etched silicon surfaces using helium ion backscatter

    NASA Technical Reports Server (NTRS)

    Sachse, G. W.; Miller, W. E.; Gross, C.

    1975-01-01

    The effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV, He-4(+) beam oriented along the silicon 111 orientation channel. Silicon samples were RF sputter etched in an argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900 C.

  7. Profile Prediction and Fabrication of Wet-Etched Gold Nanostructures for Localized Surface Plasmon Resonance

    PubMed Central

    2010-01-01

    Dispersed nanosphere lithography can be employed to fabricate gold nanostructures for localized surface plasmon resonance, in which the gold film evaporated on the nanospheres is anisotropically dry etched to obtain gold nanostructures. This paper reports that by wet etching of the gold film, various kinds of gold nanostructures can be fabricated in a cost-effective way. The shape of the nanostructures is predicted by profile simulation, and the localized surface plasmon resonance spectrum is observed to be shifting its extinction peak with the etching time. (See supplementary material 1) PMID:20672106

  8. Creation of hollow SAPO-34 single crystals via alkaline or acid etching.

    PubMed

    Qiao, Yuyan; Yang, Miao; Gao, Beibei; Wang, Linying; Tian, Peng; Xu, Shutao; Liu, Zhongmin

    2016-04-14

    Hollow SAPO-34 crystals are created via selective etching of their precursor under controlled alkaline or acid conditions. The abundant/interconnected Si-O-Al domains and Si-O-Si networks at the outer layer of SAPO-34 crystals are revealed to be decisive factors for the base and acid treatments respectively to achieve a well-preserved hollow structure. PMID:27042708

  9. Bonding of self-adhesive resin cements to enamel using different surface treatments: bond strength and etching pattern evaluations.

    PubMed

    Lin, Jie; Shinya, Akikazu; Gomi, Harunori; Shinya, Akiyoshi

    2010-08-01

    This study evaluated the shear bond strengths and etching patterns of seven self-adhesive resin cements to human enamel specimens which were subjected to one of the following surface treatments: (1) Polishing with #600 polishing paper; (2) Phosphoric acid; (3) G-Bond one-step adhesive; or (4) Phosphoric acid and G-Bond. After surface treatment, the human incisor specimens were bonded to a resin composite using a self-adhesive resin cement [Maxcem (MA), RelyX Unicem (UN), Breeze (BR), BisCem (BI), seT (SE), Clearfil SA Luting (CL)] or a conventional resin cement [ResiCem (RE)]. Representative morphology formed with self-adhesive resin cements showed areas of etched enamel intermingled with areas of featureless enamel. In conclusion, etching efficacy influenced the bonding effectiveness of self-adhesive resin cements to unground enamel, and that a combined use of phosphoric acid and G-Bond for pretreatment of human enamel surfaces improved the bond strength of self-adhesive resin cements. PMID:20668359

  10. Changes in boron fiber strength due to surface removal by chemical etching

    NASA Technical Reports Server (NTRS)

    Smith, R. J.

    1976-01-01

    The effects of chemical etching on the tensile strength of commercial boron/tungsten fibers were investigated. Fibers with as-received diameters of 203, 143, and 100 micrometers were etched to diameters as small as 43 micrometers. The etching generally resulted in increasing fiber tensile strength with decreasing fiber diameter. And for the 203 micrometer fibers there was an accompanying significant decrease in the coefficient of variation of the tensile strength for diameters down to 89 micrometers. Heat treating these fibers above 1,173 K in a vacuum caused a marked decrease in the average tensile strength of at least 80 percent. But after the fibers were etched, their strengths exceeded the as-received strengths. The tensile strength behavior is explained in terms of etching effects on surface flaws and the residual stress pattern of the as-received fibers.

  11. Effect of the application time of phosphoric acid and self-etch adhesive systems to sclerotic dentin

    PubMed Central

    MENA-SERRANO, Alexandra Patricia; GARCIA, Eugenio Jose; PEREZ, Miguel Muñoz; MARTINS, Gislaine Cristine; GRANDE, Rosa Helena Miranda; LOGUERCIO, Alessandro Dourado; REIS, Alessandra

    2013-01-01

    Objectives: To evaluate the effect of application time on the resin-dentin bond strength (µTBS) and etching pattern of adhesive systems applied on sclerotic dentine. Material and Methods: A total of forty-two bovine incisors had their roots removed. The 1-step self-etch GO (SDI), the 2-step self-etch Adper SE Bond (3MESPE) and the 35% phosphoric acid (3MESPE) from the 2-step etch-and-rinse Adper Single Bond 2 (3MESPE) were applied on the bovine incisal surfaces according to the manufacturer's instructions or duplicating the recommended conditioning time. After adhesive application, thirty teeth were restored with composite resin, stored for 24 h in distilled water at 37º C, and sectioned into resin-dentin bonded sticks (0.8 mm2) and tested according to the µTBS at 0.5 mm/min. The etching pattern of the remaining twelve teeth (n=4 for each material) was examined under scanning electron microscopy. Each tooth was divided into a buccal-to-lingual direction into three thirds, and each third randomly assigned to the groups: control (no treatment), according to the manufacturers' instructions and duplicating the recommended application time. The µTBS and the relative percentage of the tubule area opening were evaluated by two-way repeated measures ANOVA and Tukey's tests (α=0.05). Results: The duplication of the conditioning time favored only the GO adhesive (p<0.05). Both application methods significantly increased the tubule area opening (p<0.05) compared to the controls. Conclusions: The efficacy of duplicating the conditioning time was only effective for the 1-step self-etch adhesive system tested. PMID:23739856

  12. Scanning electron microscopy of the root surface texture of extracted periodontally diseased teeth following various etching and chelating regimens.

    PubMed

    Bergenholtz, A; Babay, N

    1998-04-01

    Scanning electron microscopy of root surfaces that had been ultrasonically scaled and subjected to various conditioning regimens revealed the presence of two distinct types of cracks: extensive cracks, presumed to have been caused by drying before and during sputter-coating procedures; and smaller cracks that reflected the pattern of the irregular underlying dentin. Both etching and chelating agents appear to cause demineralization of the interfacial layer between cementum and dentin, causing a "peeling off" of cementum and exposure of the underlying dentin. The results suggest that burnishing the scaled root surface with either saline or any of the etching or chelating agents for at least 10 seconds, followed by soaking the cementum in 8% ethylenediaminetetraacetic acid for about 40 seconds, achieved a root surface that might be regarded as optimal for regeneration of periodontal tissues. PMID:9663095

  13. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    SciTech Connect

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa; Hinata, Toru; Washio, Masakazu; Oshima, Akihiro; Tagawa, Seiichi

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  14. Surface reactivity from electrochemical lithography: illustration in the steady-state reductive etching of perfluorinated surfaces.

    PubMed

    Hazimeh, Hassan; Nunige, Sandra; Cornut, Renaud; Lefrou, Christine; Combellas, Catherine; Kanoufi, Frédéric

    2011-08-01

    The scanning electrochemical microscope (SECM) in the lithographic mode is used to assess quantitatively, from both theoretical and experimental points of view, the kinetics of irreversible transformation of electroactive molecular moieties immobilized on a surface as self-assembled monolayers (SAMs). The SECM tip allows the generation of an etchant that transforms the surface locally and irreversibly. The resulting surface patterning is detectable by different surface analyses. The quantification of the surface transformation kinetics is deduced from the evolution of the pattern dimensions with the etching time. The special case of slow etching kinetics is presented; it is predicted that the pattern evolution follows the expansion of the etchant at the substrate surface. The case of a chemically unstable etchant is considered. The model is then tested by inspecting the slow reductive patterning of a perfluorinated SAM. Good agreement is found with different independent SECM interrogation modes, depending on the insulating or conducting nature of the covered substrate. The surface transformation measurements are also compared to the reduction of solutions of perfluoroalkanes. The three-orders-of-magnitude-slower electron transfer observed at the immobilized molecules likely describes the large reorganization associated with the generation of a perfluoroalkyl-centered radical anion. PMID:21682293

  15. X-ray photoelectron spectroscopy study of chemically-etched Nd-Ce-Cu-O surfaces

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Gupta, A.; Kussmaul, A.

    1991-01-01

    Acetic acid, Br2, and HCl solutions are investigated for removing insulating species from Nd(1.85)Ce(0.15)CuO(4-delta) (NCCO) thin film surfaces. X-ray photoelectron spectroscopy (XPS) shows that the HCl etch is most effective, yielding O 1s spectra comparable to those obtained from samples cleaned in vacuum and a clear Fermi edge in the valence band region. Reduction and oxidation reversibly induces and eliminates, respectively, Fermi level states for undoped samples, but has no clearly observable effect on the XPS spectra for doped samples. Reactivity to air is much less for NCCO compared to hole superconductors, which is attributed to the lack of reactive alkaline earth elements in NCCO.

  16. Nanohole formation on AlGaAs surfaces by local droplet etching with gallium

    NASA Astrophysics Data System (ADS)

    Heyn, Ch.; Stemmann, A.; Hansen, W.

    2009-03-01

    We demonstrate the self-assembled generation of nanoholes on AlGaAs surfaces by local droplet etching (LDE). For the etching process, Ga is deposited on the surface, where liquid droplets are formed in a Volmer-Weber-like growth mode. The etching takes place locally at the interface between droplets and substrate and removes a significant amount of substrate material. The structural properties of the LDE nanoholes are studied with atomic force microscopy as function of etching temperature and Ga coverage. A bimodal depth distribution with flat and deep holes is observed. The formation of flat holes can be almost suppressed by optimized etching parameters. The depth of deep holes was adjusted by the process parameters up to a maximum depth of 15 nm. The density of deep holes is in the range 5×10 -7-1×10 -8 cm -2 and depends only slightly on the etching parameters. However, the density can be significantly increased by repeated etching.

  17. A survey of some metallographic etching reagents for restoration of obliterated engraved marks on aluminium-silicon alloy surfaces.

    PubMed

    Uli, Norjaidi; Kuppuswamy, R; Amran, Mohd Firdaus Che

    2011-05-20

    A brief survey to assess the sensitivity and efficacy of some common etching reagents for revealing obliterated engraved marks on Al-Si alloy surfaces is presented. Experimental observations have recommended use of alternate swabbing of 10% NaOH and 10% HNO(3) on the obliterated surfaces for obtaining the desired results. The NaOH etchant responsible for bringing back the original marks resulted in the deposition of some dark coating that has masked the recovered marks. The coating had been well removed by dissolving it in HNO(3) containing 10-20% acid. However, the above etching procedure was not effective on aluminium (99% purity) and Al-Zn-Mg-Cu alloy surfaces. Also the two reagents (i) immersion in 10% aq. phosphoric acid and (ii) alternate swabbing of 60% HCl and 40% NaOH suggested earlier for high strength Al-Zn-Mg-Cu alloys [23] were quite ineffective on Al-Si alloys. Thus different aluminium alloys needed different etching treatments for successfully restoring the obliterated marks. Al-Si alloys used in casting find wide applications especially in the manufacture of engine blocks of motor vehicles. Hence, the results presented in this paper are of much relevance in serial number restoration problems involving this alloy. PMID:21145675

  18. Influence of oxygen inhibition on the surface free-energy and dentin bond strength of self-etch adhesives.

    PubMed

    Koga, Kensaku; Tsujimoto, Akimasa; Ishii, Ryo; Iino, Masayoshi; Kotaku, Mayumi; Takamizawa, Toshiki; Tsubota, Keishi; Miyazaki, Masashi

    2011-10-01

    We compared the surface free-energies and dentin bond strengths of single-step self-etch adhesives with and without an oxygen-inhibited layer. The labial dentin surfaces of bovine mandibular incisors were wet ground with #600-grit silicon carbide paper. The adhesives were applied to the ground dentin, light-irradiated, and the oxygen-inhibited layer was either retained or removed with ethanol. The surface free-energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. The dentin bond strengths of specimens with and without the oxygen-inhibited layer were measured. For all surfaces, the value of the estimated surface tension component was relatively constant at 35.5-39.8 mJ m(-2) . The value of the , Lewis acid component increased slightly when the oxygen-inhibited layer was removed, whereas that of the , Lewis base component decreased significantly. The bond strengths of the self-etch adhesives were significantly lower in specimens without an oxygen-inhibited layer (13.2-13.6 MPa) than in those with an oxygen-inhibited layer (17.5-18.4 MPa). These results indicate that the presence of an oxygen-inhibited layer in single-step self-etch adhesives with advanced photoinitiators promotes higher dentin bond strength. PMID:21896057

  19. Impact of Silicon Surface Roughness upon MOS after TMAH and KOH Silicon Etching

    NASA Astrophysics Data System (ADS)

    Rashid, M.; Ibrahim, K.; Aziz, A. Abdul; Ooi, P. K.

    2010-07-01

    Wet Si etching was explored via different concentrations of tetramethylammonium hydroxide (TMAH) and potassium hydroxide (KOH). It was verified that lower concentrations give rise to higher etching rates thus higher surface roughness for both TMAH and KOH. Impact on MOS capacitor includes C-V curve distortion and flatband voltage (VFB) reduction with increasing surface roughness. Using KOH solution resulted in hysteresis of C-V curve which was not observed in TMAH. TMAH at concentration >18 wt.% has been identified as promising Si wet etchant for smoother surface. In producing VMOSFET, lower concentrations of TMAH and using KOH are to be avoided to evade surface roughness and C-V hysteresis.

  20. Reaction ion etching process for improving laser damage resistance of fused silica optical surface.

    PubMed

    Sun, Laixi; Liu, Hongjie; Huang, Jin; Ye, Xin; Xia, Handing; Li, Qingzhi; Jiang, Xiaodong; Wu, Weidong; Yang, Liming; Zheng, Wanguo

    2016-01-11

    Laser induced damage of fused silica optics occurs primarily on optical surface or subsurface resulting from various defects produced during polishing/grinding process. Many new kinds of surface treatment processes are explored to remove or control the defects on fused silica surface. In this study, we report a new application of reaction ion etching (RIE)-based surface treatment process for manufacture of high quality fused silica optics. The influence of RIE processes on laser damage resistance as a function of etching depth and the evolution of typical defects which are associated with laser damage performance were investigated. The results show that the impurity element defects and subsurface damage on the samples surface were efficiently removed and prevented. Pure silica surface with relatively single-stable stoichiometry and low carbon atomic concentration was created during the etching. The laser damage resistance of the etched samples increased dramatically. The increase of roughness and ODC point defect with deeper etching are believed to be the main factors to limit further increase of the damage resistance of fused silica. The study is expected to contribute to the development of fused silica optics with high resistance to laser induced degradation in the future. PMID:26832251

  1. Etching properties and electrical characterization of surfaces of silicon-on-insulator substrates in presence of halogens

    SciTech Connect

    Abbadie, A.; Hamaide, G.; Chaupin, M.; Brunier, F.; Mariolle, D.; Martinez, E.; Maehliss, J.

    2012-03-15

    We have studied the etching properties of silicon-on-insulator (SOI) substrates in recently developed chromium-free solutions containing halogens. We have shown that the presence of halogen compounds X (I{sup -}, Br{sup -}...) in HF/HNO{sub 3}/CH{sub 3}COOH solutions is required for a selective and preferential etching on SOI. The etching rate of such solutions increases with the dissolved halogen concentrations. The chemical reactivity of Si-X (X = Br{sup -}, I{sup -}..) bonds has been analyzed by X-ray Photoelectron Spectroscopy (XPS), Pseudo-MOS (flatband potential) and Kelvin Force Microscopy (KFM) measurements. A negative shift of flatband potential values is explained by an increasing concentration of halogen compounds in the solution and a substitution of Si-H (F) bonds by Si-X bonds during the reaction. Though Si-X bonds, and more particularly Si-I bonds, have been confirmed only at trace levels using XPS, we believe that the formation of Si-X bonds is supported by a mechanism of surface dipoles. Unexpectedly, no significant change in work function could be detected using KFM measurements. Some suggestions, based on KFM technique improvements, are made to explain such results. Finally, though the interaction mechanism between silicon, fluoride, iodide, and nitric acid is not clearly elucidated by our experimental results, the formation of Si-halogen bonds is crucial for etching and defect decoration capability.

  2. Etching of nanostructures on soda-lime glass.

    PubMed

    Wang, Elmer; Zhao, Yang

    2014-07-01

    Nanostructures were created on the surface of optical glass using nanosphere lithography. The substrates were etched with vapor-phase hydrofluoric (HF) acid. The etching rate was studied and compared with existing results of wet and dry HF etching. An empirical etching rate formula is found for etching depth up to 300 nm. The subsequent artificial material layer demonstrated enhanced transmittance in optical wavelengths. PMID:24978727

  3. Enhancement on photocatalytic activity of an amorphous titanium oxide film with nano-textured surface by selective-fluorination etching process

    SciTech Connect

    Shih, Pin-Chun; Huang, Cheng-Hao; Chen, Tai-Hong; Lai, Li-Wen; Lu, Yi-Shan; Liu, Day-Shan

    2014-04-01

    Highlights: • The amorphous TiO{sub x} film surface was modified via selective fluorination etching process. • The resulting nano-textured surface markedly enriched the specific surface area and surface acidity. • The photocatalytic activity was comparable to an annealed TiO{sub x} film with anatase structure. - Abstract: A selective-fluorination etching process achieved by an UV light pre-irradiation and the subsequently fluorination etching was developed to enhance the photocatalytic activity of a low-temperature deposited amorphous titanium oxide (a-TiO{sub x}) film. Textured surface on the a-TiO{sub x} films formed by this process were investigated using atomic force microscope and field emission scanning electron microscope. Evidence of the fluorine ions introduced into the a-TiO{sub x} films was examined using Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy. The etching thickness of the a-TiO{sub x} film was found to be deeply relevant to the film pre-irradiated by the UV light. An a-TiO{sub x} film with nano-textured surface, which was favorable to enlarge the specific surface area, thus was obtainable from the notable etching selectivity of the film pre-irradiated by UV light through a nano-sized mask. In addition, the surface acidity of the a-TiO{sub x} film was enhanced by the formation of the Ti-F chemical bonds originating from the fluorination etching process, which also was functional to facilitate the production of surface OH free radicals. Accordingly, the resulting fluorinated a-TiO{sub x} film with nano-textured surface performed a quality photocatalytic activity comparable to that of the high-temperature achieved TiO{sub x} film with anatase structures.

  4. Photoluminescence characterization of the surface layer of chemically etched CdTe

    NASA Astrophysics Data System (ADS)

    García-García, J.; González-Hernández, J.; Mendoza-Alvarez, J. G.; Cruz, Elías López; Contreras-Puente, Gerardo

    1990-04-01

    The effects of several reducing and oxidizing etches on CdTe surfaces have been characterized by photoluminescence. For excitation, several lines from three different types of gas lasers, emitting at 325 nm (He-Cd laser), 488 nm (argon-ion laser), and 632.8 nm (He-Ne laser) were used. The corresponding light penetration depth varied from approximately 25 to 200 nm. The analysis of the photoluminescence as a function of the depth not only allows the characterization of the type of defects created by the etching but also their location from the treated surfaces. Proper etching solutions produce surfaces with a crystalline quality comparable to that of a cleaved surface and the photoluminescence spectra do not depend on the energy of the excitation.

  5. Nanoscale Etching and Indentation of Silicon(001) Surface with Carbon Nanotube Tips

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fendor N.; Srivastava, Deepak; Saini, Subhash

    1998-01-01

    The possibility of nanoscale etching and indentation of Si(001)(2x1) surface by (8,0) and (10,10) carbon nanotube tips is demonstrated, for the first time, by classical molecular dynamics simulations employing Tersoff's many-body potential for a mixed C/Si/Ge system. In the nanotube tip barely touching the surface scenario atomistic etching is observed, where as in the nanoindentation scenario nanotube tip penetrates the surface without much hindrance. The results are explained in terms of the relative strength of C-C, C-Si, and Si-Si bonds.

  6. Antireflective grassy surface on glass substrates with self-masked dry etching

    PubMed Central

    2013-01-01

    Although recently developed bio-inspired nanostructures exhibit superior optic performance, their practical applications are limited due to cost issues. We present highly transparent glasses with grassy surface fabricated with self-masked dry etch process. Simultaneously generated nanoclusters during reactive ion etch process with simple gas mixture (i.e., CF4/O2) enables lithography-free, one-step nanostructure fabrication. The resulting grassy surfaces, composed of tapered subwavelength structures, exhibit antireflective (AR) properties in 300 to 1,800-nm wavelength ranges as well as improved hydrophilicity for antifogging. Rigorous coupled-wave analysis calculation provides design guidelines for AR surface on glass substrates. PMID:24289255

  7. Antireflective grassy surface on glass substrates with self-masked dry etching

    NASA Astrophysics Data System (ADS)

    Song, Young Min; Park, Gyeong Cheol; Kang, Eun Kyu; Yeo, Chan Il; Lee, Yong Tak

    2013-12-01

    Although recently developed bio-inspired nanostructures exhibit superior optic performance, their practical applications are limited due to cost issues. We present highly transparent glasses with grassy surface fabricated with self-masked dry etch process. Simultaneously generated nanoclusters during reactive ion etch process with simple gas mixture (i.e., CF4/O2) enables lithography-free, one-step nanostructure fabrication. The resulting grassy surfaces, composed of tapered subwavelength structures, exhibit antireflective (AR) properties in 300 to 1,800-nm wavelength ranges as well as improved hydrophilicity for antifogging. Rigorous coupled-wave analysis calculation provides design guidelines for AR surface on glass substrates.

  8. Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.; Mahmood, R.; Johnson, D. L.

    1979-01-01

    A wide range of the ion beam etch parameters are capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films. The alignment surfaces were generated by obliquely incident argon ions; a smaller range of ion beam parameters was also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high, and twist and tilt-bias angles were very small. The SEM results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.

  9. The Effect of HF/NH4F Etching on the Morphology of Surface Fractures on Fused Silica

    SciTech Connect

    Wong, L; Suratwala, T; Feit, M D; Miller, P E; Steele, R A

    2008-04-03

    The effects of HF/NH{sub 4}F, wet chemical etching on the morphology of individual surface fractures (indentations, scratches) and of an ensemble of surface fractures (ground surfaces) on fused silica glass has been characterized. For the individual surface fractures, a series of static or dynamic (sliding) Vickers and Brinnell indenters were used to create radial, lateral, Hertzian cone and trailing indentation fractures on a set of polished fused silica substrates which were subsequently etched. After short etch times, the visibility of both surface and subsurface cracks is significantly enhanced when observed by optical microscopy. This is attributed to the removal of the polishing-induced Bielby layer and the increased width of the cracks following etching allowing for greater optical scatter at the fracture interface. The removal of material during etching was found to be isotropic except in areas where the etchant has difficulty penetrating or in areas that exhibit significant plastic deformation/densification. Isolated fractures continue to etch, but will never be completely removed since the bottom and top of the crack both etch at the same rate. The etching behavior of ensembles of closely spaced cracks, such as those produced during grinding, has also been characterized. This was done using a second set of fused silica samples that were ground using either fixed or loose abrasives. The resulting samples were etched and both the etch rate and the morphology of the surfaces were monitored as a function of time. Etching results in the formation of a series of open cracks or cusps, each corresponding to the individual fractures originally on the surface of the substrate. During extended etching, the individual cusps coalesce with one another, providing a means of reducing the depth of subsurface damage and the peak-to-valley roughness. In addition, the material removal rate of the ground surfaces was found to scale with the surface area of the cracks as a

  10. Surface modification with alumina blasting and H2SO4-HCl etching for bonding two resin-composite veneers to titanium.

    PubMed

    Taira, Yohsuke; Egoshi, Takafumi; Kamada, Kohji; Sawase, Takashi

    2014-02-01

    The purpose of this study was to investigate the effect of an experimental surface treatment with alumina blasting and acid etching on the bond strengths between each of two resin composites and commercially pure titanium. The titanium surface was blasted with alumina and then etched with 45wt% H2SO4 and 15wt% HCl (H2SO4-HCl). A light- and heat-curing resin composite (Estenia) and a light-curing resin composite (Ceramage) were used with adjunctive metal primers. Veneered specimens were subjected to thermal cycling between 4 and 60°C for 50,000 cycles, and the shear bond strengths were determined. The highest bond strengths were obtained for Blasting/H2SO4-HCl/Estenia (30.2 ± 4.5 MPa) and Blasting/Etching/Ceramage (26.0 ± 4.5 MPa), the values of which were not statistically different, followed by Blasting/No etching/Estenia (20.4 ± 2.4 MPa) and Blasting/No etching/Ceramage (0.8 ± 0.3 MPa). Scanning electron microscopy observations revealed that alumina blasting and H2SO4-HCl etching creates a number of micro- and nanoscale cavities on the titanium surface, which contribute to adhesive bonding. PMID:24372961

  11. Effects of wet etch processing on laser-induced damage of fused silica surfaces

    SciTech Connect

    Battersby, C.L.; Kozlowski, M.R.; Sheehan, L.M.

    1998-12-22

    Laser-induced damage of transparent fused silica optical components by 355 nm illumination occurs primarily at surface defects produced during the grinding and polishing processes. These defects can either be surface defects or sub-surface damage.Wet etch processing in a buffered hydrogen fluoride (HF) solution has been examined as a tool for characterizing such defects. A study was conducted to understand the effects of etch depth on the damage threshold of fused silica substrates. The study used a 355 nm, 7.5 ns, 10 Hz Nd:YAG laser to damage test fused silica optics through various wet etch processing steps. Inspection of the surface quality was performed with Nomarski microscopy and Total Internal Reflection Microscopy. The damage test data and inspection results were correlated with polishing process specifics. The results show that a wet etch exposes subsurface damage while maintaining or improving the laser damage performance. The benefits of a wet etch must be evaluated for each polishing process.

  12. In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces

    NASA Astrophysics Data System (ADS)

    de Angelis, S.; Perrone, D.; Scaltrito, L.; Ferrero, S.; Pirri, C. F.; Mauceri, M.; Leone, S.; Pistone, G.; Abbondanza, G.; Crippa, D.

    2006-07-01

    Different homo epitaxial 4H-SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural changes of epitaxial surfaces.An optical microscopy inspection was made to trace out a map of defect areas before and after etching treatments. We have analysed the morphological evolution of the surface in every etching process step by means of marked area on the defect map. We also achieved some other important information, concerning structural and morphological changing, by performing Atomic Force Microscopy and Micro Raman spectroscopy analysis on the same defect marked area.The etched epilayers showed a significant reduction of defects density and a good surface morphology. On investigated samples we fabricated Schottky diodes, their electrical behaviour compared to the devices fabricated on not etched epitaxial layer highlights the surface quality improvement and the increasing of SBD working yield.

  13. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  14. A Silicon-Based, Sequential Coat-and-Etch Process to Fabricate Nearly Perfect Substrate Surfaces

    SciTech Connect

    Mirkarimi, P B; Spiller, E; Baker, S L; Stearns, D G; Robinson, J C; Olynick, D L; Salmassi, F; Liddle, J A; Liang, T; Stivers, A R

    2005-07-05

    For many thin-film applications substrate imperfections such as particles, pits, scratches, and general roughness, can nucleate film defects which can severely detract from the coating's performance. Previously we developed a coat-and-etch process, termed the ion beam thin film planarization process, to planarize substrate particles up to {approx} 70 nm in diameter. The process relied on normal incidence etching; however, such a process induces defects nucleated by substrate pits to grow much larger. We have since developed a coat-and-etch process to planarize {approx}70 nm deep by 70 nm wide substrate pits; it relies on etching at an off-normal incidence angle, i.e., an angle of {approx} 70{sup o} from the substrate normal. However, a disadvantage of this pit smoothing process is that it induces defects nucleated by substrate particles to grow larger. Combining elements from both processes we have been able to develop a silicon-based, coat-and-etch process to successfully planarize {approx}70 nm substrate particles and pits simultaneously to at or below 1 nm in height; this value is important for applications such as extreme ultraviolet lithography (EUVL) masks. The coat-and-etch process has an added ability to significantly reduce high-spatial frequency roughness, rendering a nearly perfect substrate surface.

  15. Unintentional F doping of SrTiO3(001) etched in HF acid-structure and electronic properties

    SciTech Connect

    Chambers, Scott A.; Droubay, Timothy C.; Capan, Cigdem; Sun, Guangyuan

    2012-02-01

    We show that the HF acid etch commonly used to prepare SrTiO3(001) for heteroepitaxial growth of complex oxides results in a non-negligible level of F doping within the terminal surface layer of TiO2. Using a combination of x-ray photoelectron spectroscopy and scanned angle x-ray photoelectron diffraction, we determine that on average ~ 13% of the O anions in the surface layer are replaced by F, but that F does not occupy O sites in deeper layers. Despite this perturbation to the surface, the Fermi level remains unpinned, and the surface-state density, which determines the amount of band bending, is driven by factors other than F doping. The presence of F at the STO surface is expected to result in lower electron mobilities at complex oxide heterojunctions involving STO substrates because of impurity scattering. Unintentional F doping can be substantially reduced by replacing the HF-etch step with a boil in deionized water, which in conjunction with an oxygen tube furnace anneal, leaves the surface flat and TiO2 terminated.

  16. Plasma surface kinetics studies of silicon dioxide etch process in inductively coupled fluorocarbon plasmas

    NASA Astrophysics Data System (ADS)

    Chang, Won-Seok; Yu, Dong-Hun; Cho, Deog-Gyun; Yook, Yeong-Geun; Chun, Poo-Reum; Lee, Se-Ah; Kwon, Deuk-Chul; Im, Yeon-Ho

    2013-09-01

    With continuous decrease of nanoscale design rule, plasma etching processes to form high aspect ratio contact hole still remains a challenge to overcome their inherent drawbacks such as bowing and twisted feature. Due to their complexities there still exist big gaps between current research status and predictable modeling of this process. To address this issue, we proposed a surface kinetic model of silicon nitride etch process under inductively coupled fluorocarbon plasmas. For this work, the cut-off probe and quadrapole mass spectroscopy were used for measuring electrical plasma properties, the ion and neutral radical species. Furthermore, the systematic surface analysis was performed to investigate the thickness and chemical bonding of polymer passivation layer during the etch process. The proposed semi-global surface kinetic model can consider deposition of polymer passivation layer and silicon nitride etching self-consistently. The predicted modeling results showed good agreement with experimental data. We believe that our research will provide valuable information to avoid the empirical development of plasma etching process.

  17. Evaluation of Bone Healing on Sandblasted and Acid Etched Implants Coated with Nanocrystalline Hydroxyapatite: An In Vivo Study in Rabbit Femur

    PubMed Central

    Melin Svanborg, Lory; Meirelles, Luiz; Franke Stenport, Victoria; Currie, Fredrik; Andersson, Martin

    2014-01-01

    This study aimed at investigating if a coating of hydroxyapatite nanocrystals would enhance bone healing over time in trabecular bone. Sandblasted and acid etched titanium implants with and without a submicron thick coat of hydroxyapatite nanocrystals (nano-HA) were implanted in rabbit femur with healing times of 2, 4, and 9 weeks. Removal torque analyses and histological evaluations were performed. The torque analysis did not show any significant differences between the implants at any healing time. The control implant showed a tendency of more newly formed bone after 4 weeks of healing and significantly higher bone area values after 9 weeks of healing. According to the results from this present study, both control and nano-HA surfaces were biocompatible and osteoconductive. A submicron thick coating of hydroxyapatite nanocrystals deposited onto blasted and acid etched screw shaped titanium implants did not enhance bone healing, as compared to blasted and etched control implants when placed in trabecular bone. PMID:24723952

  18. Extremely superhydrophobic surfaces with micro- and nanostructures fabricated by copper catalytic etching.

    PubMed

    Lee, Jung-Pil; Choi, Sinho; Park, Soojin

    2011-01-18

    We demonstrate a simple method for the fabrication of rough silicon surfaces with micro- and nanostructures, which exhibited superhydrophobic behaviors. Hierarchically rough silicon surfaces were prepared by copper (Cu)-assisted chemical etching process where Cu nanoparticles having particle size of 10-30 nm were deposited on silicon surface, depending on the period of time of electroless Cu plating. Surface roughness was controlled by both the size of Cu nanoparticles and etching conditions. As-synthesized rough silicon surfaces showed water contact angles ranging from 93° to 149°. Moreover, the hierarchically rough silicon surfaces were chemically modified by spin-coating of a thin layer of Teflon precursor with low surface energy. And thus it exhibited nonsticky and enhanced hydrophobic properties with extremely high contact angle of nearly 180°. PMID:21162520

  19. Fabrication of micro-structure on glass surface using micro-indentation and wet etching process

    NASA Astrophysics Data System (ADS)

    Saito, Yasuhiro; Okamoto, Shinya; Miki, Atsushi; Inomata, Hiroyuki; Hidaka, Takeshi; Kasai, Hiroaki

    2008-09-01

    In order to improve the new micro-fabrication technology using micro-indentation and wet etching, in which the etching rate drastically decrease at the indented area and consequently micro-structure can be formed on the glass surface, the effect of the applying load on the etching rate change was investigated. The extent of the etching rate change was found to be almost constant irrespective of the amount of the applying load. Therefore, the height of the structure could be controlled simply by the etching depth as far as the densified portion remains beneath the glass surface. And some example micro-patterns were fabricated in this process. Various kinds of indentation methods were employed, including scanning a pointed tool under a load and wet abrasive blast. The patterns can be freely drawn by the use of numerical control (NC) machine. Mold pattern can be also applied, which enables drawing many lines simultaneously. In every method, the heights of the patterns were confirmed to be very uniform. This new type of the micro-fabrication method was referred to as "SMIL (Stress Masked Image Lithography)".

  20. NCMS PWB program report surface finishes team task WBS No. 3.1.1: Phase 1, Etching Studies: Chemical etching of copper for improved solderability

    SciTech Connect

    Stevenson, J.O.; Guilinger, T.R.; Hosking, F.M.; Yost, F.G.; Sorensen, N.R.

    1995-06-01

    Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. We are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, we present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

  1. Laser surface pretreatment of 100Cr6 bearing steel - Hardening effects and white etching zones

    NASA Astrophysics Data System (ADS)

    Buling, Anna; Sändker, Hendrik; Stollenwerk, Jochen; Krupp, Ulrich; Hamann-Steinmeier, Angela

    2016-08-01

    In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1-1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

  2. Energy dispersive X-ray spectroscopy analysis of Si sidewall surface etched by deep-reactive ion etching

    NASA Astrophysics Data System (ADS)

    Matsutani, Akihiro; Nishioka, Kunio; Sato, Mina

    2016-06-01

    We investigated the composition of a passivation film on a sidewall etched by deep-reactive ion etching (RIE) using SF6/O2 and C4F8 plasma, by energy-dispersive X-ray (EDX) spectroscopy. It was found that the compositions of carbon and fluorine in the passivation film on the etched sidewall depend on the width and depth of the etched trench. It is important to understand both the plasma behavior and the passivation film composition to carry out fabrication by deep-RIE. We consider that these results of the EDX analysis of an etched sidewall will be useful for understanding plasma behavior in order to optimize the process conditions of deep-RIE.

  3. Water adsorption on etched hydrophobic surfaces of L-, D- and DL-valine crystals

    NASA Astrophysics Data System (ADS)

    Segura, J. J.; Verdaguer, A.; Fraxedas, J.

    2014-03-01

    The adsorption of water on etched (001) surfaces of L-, D- and DL-valine crystals has been characterized by atomic force microscopy (AFM) using different operational modes (contact, non-contact and electrostatic) above and below the dew point, the temperature at which water vapor from humid air condenses into liquid water at constant atmospheric pressure. The analysis of the images suggests the formation of aggregates of solvated valine molecules that easily diffuse on the hydrophobic terraces only constrained by step barriers of the well-defined chiral parallelepipedic patterns induced by the etching process.

  4. High-transmittance surface textures formed by plasma etching of metallophthalocyanine films

    SciTech Connect

    Sakata, Hajime

    2001-06-15

    The effect of rf-induced plasma etching on thermally evaporated metallophthalocyanine films is investigated. Etching by a gas mixture of nitrogen and CF{sub 4} results in a transparent microstructuring residue with a grain size in the 100 nm range. The residue-covered surface increases visible transmittance up to 3%{endash}4% over the glass substrate. The high-transmittance effect, which is nearly insensitive to wavelength, is characterized by modeling a gradient refractive-index profile bounded on discrete interfaces with surrounding media. {copyright} 2001 American Institute of Physics.

  5. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    SciTech Connect

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  6. Fabrication mechanism of friction-induced selective etching on Si(100) surface

    PubMed Central

    2012-01-01

    As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems. PMID:22356699

  7. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    NASA Astrophysics Data System (ADS)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  8. Low cost anisotropic etching of monocrystalline Si (1 0 0): Optimization using response surface methodology

    NASA Astrophysics Data System (ADS)

    Ali, Khuram; Khan, Sohail Aziz; Jafri, Mohd Zubir Mat

    2012-10-01

    Reduced surface reflectance and enhanced light trapping is required by any high efficiency solar cell. Anisotropic etching was done on silicon (1 0 0) by using tetramethyl ammonium hydroxide TMAH, (CH3)4NOH, solution at 85 °C. Process variables considered were solution concentration and time proposed by response surface methodology (RSM). An effective surface texture was resulted with reflectance less than 8% without antireflection coating. The antireflection mechanism was also co-related with the etch rate of Si. Optimized values predicted by RSM for time and TMAH concentration were 5 min and 3.50% respectively. The technique and optimization of parameters by using response surface methodology (RSM) could be valuable in the texturization process for high-efficiency Si solar cells.

  9. Surface morphological instability of silicon (100) crystals under microwave ion physical etching

    NASA Astrophysics Data System (ADS)

    Yafarov, R. K.; Shanygin, V. Ya.

    2016-02-01

    This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.

  10. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique

    PubMed Central

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C.-N.

    2013-01-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120–130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6–10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  11. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    NASA Astrophysics Data System (ADS)

    Eassa, N.; Murape, D. M.; Betz, R.; Neethling, J. H.; Venter, A.; Botha, J. R.

    2012-05-01

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H2O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  12. Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Gray, David C.

    1992-01-01

    A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14

  13. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    NASA Technical Reports Server (NTRS)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  14. Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets.

    PubMed

    Nikoobakht, Babak; Herzing, Andrew; Muramoto, Shin; Tersoff, Jerry

    2015-12-01

    We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when heated in the presence of water vapor. As they move, the particles etch crystallographically aligned grooves into the surface. We show that this process is a negative analogue of the vapor-liquid-solid (VLS) growth of semiconductor nanowires: the semiconductor dissolves into the catalyst and reacts with water vapor at the catalyst surface to create volatile oxides, depleting the dissolved cations and anions and thus sustaining the dissolution process. This VLS etching process provides a new tool for directed assembly of structures with sublithographic dimensions, as small as a few nanometers in diameter. Au particles above 100 nm in size do not exhibit this process but remain stationary, with oxide accumulating around the particles. PMID:26599639

  15. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching.

    PubMed

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-24

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm(-2) due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization. PMID:27181455

  16. Wet-Etch Figuring: Optical Surfacing by Controlled Application of Etchant Solution Using the marangoni Effect

    SciTech Connect

    Rushford, M C; Britten, J A; Hoaglan, C R; Thomas, I M; Summers, L J; Dixit, S D

    2001-05-17

    Wet-etch figuring (WEF), a computer-controlled method for generating arbitrarily shaped optical surfaces using wet chemical etching, has been developed. This method uses applicator geometry and surface tension gradients (the Marangoni Effect) to define and confine the footprint of a wetted etchant zone on the surface. Capillary forces attach the flowing etchant solution to the underside of the optic being figured. No mechanical or thermal stresses or residues are applied to the optic by this process. This enables interferometric measurement of the glass thickness while surfacing, which then controls the placement and dwell time of the wetted zone. The result is a truly deterministic, closed-loop figuring process with a high degree of optical precision. This process can figure sub-millimeter thickness, large-aperture plates or sheets that are very difficult to finish by conventional methods. Automated linear and circular spot etching tools were used to demonstrate surfacing on 380 micron-thick glass sheets, to Strehl better than 0.8, as specified by data array or Zernike polynomials.

  17. Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching

    NASA Astrophysics Data System (ADS)

    Liu, Ruiyuan; Sun, Teng; Liu, Jiawei; Wu, Shan; Sun, Baoquan

    2016-06-01

    Silicon (Si) nanostructure-based photovoltaic devices are attractive for their excellent optical and electrical performance, but show lower efficiency than their planar counterparts due to the increased surface recombination associated with the high surface area and roughness. Here, we demonstrate an efficiency enhancement for hybrid nanostructured Si/polymer solar cells based on a novel Si honeycomb (SiHC) structure using a simple etching method. SiHC structures are fabricated using a combination of nanosphere lithography and plasma treatment followed by a wet chemical post-etching. SiHC has shown superior light-trapping ability in comparison with the other Si nanostructures, along with a robust structure. Anisotropic tetramethylammonium hydroxide etching not only tunes the final surface morphologies of the nanostructures, but also reduces the surface roughness leading to a lower recombination rate in the hybrid solar cells. The suppressed recombination loss, benefiting from the reduced surface-to-volume ratio and roughness, has resulted in a high open-circuit voltage of 600 mV, a short-circuit current of 31.46 mA cm‑2 due to the light-trapping ability of the SiHCs, and yields a power conversion efficiency of 12.79% without any other device structure optimization.

  18. Shear bond strength and debonding characteristics of metal and ceramic brackets bonded with conventional acid-etch and self-etch primer systems: An in-vivo study

    PubMed Central

    Mirzakouchaki, Behnam; Sharghi, Reza; Shirazi, Samaneh; Moghimi, Mahsan; Shahrbaf, Shirin

    2016-01-01

    Background Different in-vitro studies have reported various results regarding shear bond strength (SBS) of orthodontic brackets when SEP technique is compared to conventional system. This in-vivo study was designed to compare the effect of conventional acid-etching and self-etching primer adhesive (SEP) systems on SBS and debonding characteristics of metal and ceramic orthodontic brackets. Material and Methods 120 intact first maxillary and mandibular premolars of 30 orthodontic patients were selected and bonded with metal and ceramic brackets using conventional acid-etch or self-etch primer system. The bonded brackets were incorporated into the wire during the study period to simulate the real orthodontic treatment condition. The teeth were extracted and debonded after 30 days. The SBS, debonding characteristics and adhesive remnant indices (ARI) were determined in all groups. Results The mean SBS of metal brackets was 10.63±1.42 MPa in conventional and 9.38±1.53 MPa in SEP system, (P=0.004). No statistically significant difference was noted between conventional and SEP systems in ceramic brackets. The frequency of 1, 2 and 3 ARI scores and debonding within the adhesive were the most common among all groups. No statistically significant difference was observed regarding ARI or failure mode of debonded specimens in different brackets or bonding systems. Conclusions The SBS of metal brackets bonded using conventional system was significantly higher than SEP system, although the SBS of SEP system was clinically acceptable. No significant difference was found between conventional and SEP systems used with ceramic brackets. Total SBS of metal brackets was significantly higher than ceramic brackets. Due to adequate SBS of SEP system in bonding the metal brackets, it can be used as an alternative for conventional system. Key words:Shear bond strength, Orthodontic brackets, Adhesive remnant index, self-etch. PMID:26855704

  19. Surface etching for light trapping in encapsulated InP solar cells

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip; Landis, Geoffrey A.

    1991-01-01

    Reducing the reflection from the surface of InP is important for increasing the efficiency of solar cells and photodetectors. In this paper a new technique for reducing reflectance of glass-encapsulated InP is reported. Low-angle grooves are produced on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. A significant decrease in surface reflection is measured.

  20. Hollow organosilica nanospheres prepared through surface hydrophobic layer protected selective etching

    NASA Astrophysics Data System (ADS)

    Li, J.; Chen, L. X.; Li, X.; Zhang, C. C.; Zeng, F. L.

    2015-06-01

    In this study, a facile and effective surface hydrophobic layer protected selective etching strategy has been adopted to fabricate organic functionalized hollow silica nanospheres (OHSNSs). Our experiments demonstrated that the morphology and structure of OHSNSs were greatly affected by the types of organosilanes and concentrations of cetyltrimethylammonium bromide (CTAB) as pore-making agent. At low concentration of CTAB (1.9 mg/mL-1), it was found that the protective effect of the hydrophobic layer of 3-thiocyanatopropyltriethoxysilane (TCPTES) was so strong that can be endured long time etching (8 h), leading to the formation of hollow core and organic porous shell structure. And yet, the protective effect of the hydrophobic layer of vinyltriethoxysilane (VTES) was too weak to withstand alkali etching, resulting in preferentially etched of the outer vinyl protection shell. Whereas, at a higher concentration of CTAB (2.5 mg/mL-1), for TCPTES, the irregular and capsules-like spheres were obtained. In contrast, for VTES, porous core/solid shell structures with shell thickness of 16 nm were generated. In addition, no particles were observed when the CTAB concentration was above 2.5 mg/mL-1.

  1. Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.

    PubMed

    Guo, Jian; Yu, Bingjun; Chen, Lei; Qian, Linmao

    2015-01-01

    A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication. PMID:26559014

  2. Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

    PubMed Central

    Guo, Jian; Yu, Bingjun; Chen, Lei; Qian, Linmao

    2015-01-01

    A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication. PMID:26559014

  3. Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

    NASA Astrophysics Data System (ADS)

    Guo, Jian; Yu, Bingjun; Chen, Lei; Qian, Linmao

    2015-11-01

    A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication.

  4. Graphite surface topography induced by Ta cluster impact and oxidative etching

    NASA Astrophysics Data System (ADS)

    Reimann, C. T.; Andersson, S.; Brühwiler, P.; Mårtensson, N.; Olsson, L.; Erlandsson, R.; Henkel, M.; Urbassek, H. M.

    1998-04-01

    Freshly cleaved highly oriented pyrolytic graphite (HOPG), when baked in air at ≈630°C, forms one-monolayer (ML)-deep circular pits due to oxidation initiated at surface defect sites. We found that the areal density and depths of these pits could be modulated by deliberately introducing surface and sub-surface defects by energetic ion bombardment prior to baking. Bombardment by 555-eV/atom Ta +1, Ta +2, Ta +4, or Ta +9 always enhanced the areal density of etch pits, but only bombardment by Ta +4, or Ta +9 significantly enhanced the depths of the pits. We performed molecular dynamics simulations of Ta n cluster bombardment of HOPG ( n=1,2,4, and 9) with the aim of characterizing the damage structures induced by the bombardment and correlating them with the experimental data. For Ta 9, the simulations showed a high level of damage extending from the surface down to nine MLs, in agreement with the most probable etch pit depth observed. For other cluster species, predicted etch pit depths were deeper than the observed ones. Annealing or steric requirements for initiating oxidation may account for some of the differences between simulations and experimental results.

  5. Adaptive wettability-enhanced surfaces ordered on molded etched substrates using shrink film

    NASA Astrophysics Data System (ADS)

    Jayadev, Shreshta; Pegan, Jonathan; Dyer, David; McLane, Jolie; Lim, Jessica; Khine, Michelle

    2013-01-01

    Superhydrophobic surfaces in nature exhibit desirable properties including self-cleaning, bacterial resistance, and flight efficiency. However, creating such intricate multi-scale features with conventional fabrication approaches is difficult, expensive, and not scalable. By patterning photoresist on pre-stressed shrink-wrap film, which contracts by 95% in surface area when heated, such features over large areas can be obtained easily. Photoresist serves as a dry etch mask to create complex and high-aspect ratio microstructures in the film. Using a double-shrink process, we introduce adaptive wettability-enhanced surfaces ordered on molded etched (AWESOME) substrates. We first create a mask out of the children’s toy ‘Shrinky-Dinks’ by printing dots using a laserjet printer. Heating this thermoplastic sheet causes the printed dots to shrink to a fraction of their original size. We then lithographically transfer the inverse pattern onto photoresist-coated shrink-wrap polyolefin film. The film is then plasma etched. After shrinking, the film serves as a high-aspect ratio mold for polydimethylsiloxane, creating a superhydrophobic surface with water contact angles >150° and sliding angles <10°. We pattern a microarray of ‘sticky’ spots with a dramatically different sliding angle compared to that of the superhydrophobic region, enabling microtiter-plate type assays without the need for a well plate.

  6. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Blom, Hans-Olof; Chang, Jane P.

    2009-03-15

    The mechanism for ion-enhanced chemical etching of hafnium aluminate thin films in Cl{sub 2}/BCl{sub 3} plasmas was investigated in this work, specifically how the film composition, ion energy, and plasma chemistry determine their etch rates. Several compositions of Hf{sub 1-x}Al{sub x}O{sub y} thin films ranging from pure HfO{sub 2} to pure Al{sub 2}O{sub 3} were etched in BCl{sub 3}/Cl{sub 2} plasmas and their etch rates were found to scale with {radical}(E{sub ion}) in both Cl{sub 2} and BCl{sub 3} plasmas. In Cl{sub 2} plasmas, a transition point was observed around 50 eV, where the etch rate was significantly enhanced while the linear dependence to {radical}(E{sub ion}) was maintained, corresponding to a change in the removal of fully chlorinated to less chlorinated reaction products. In BCl{sub 3} plasma, deposition dominates at ion energies below 50 eV, while etching occurs above that energy with an etch rate of three to seven times that in Cl{sub 2}. The faster etch rate in BCl{sub 3} was attributed to a change in the dominant ion from Cl{sub 2}{sup +} in Cl{sub 2} plasma to BCl{sub 2}{sup +} in BCl{sub 3}, which facilitated the formation of more volatile etch products and their removal. The surface chlorination (0-3 at. %) was enhanced with increasing ion energy while the amount of boron on the surface increases with decreasing ion energy, highlighting the effect of different plasma chemistries on the etch rates, etch product formation, and surface termination.

  7. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  8. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    PubMed

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P < 0.05); no difference was observed between the composites (P > 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength. PMID:22414522

  9. Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces

    NASA Technical Reports Server (NTRS)

    Wintucky, E. G.; Mahmood, R.; Johnson, D. L.

    1979-01-01

    A wide range of ion beam etch parameters capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films are discussed. The alignment surfaces were generated by obliquely incident (angles of 5 to 25 deg) argon ions with energies in the range of 0.5 to 2.0 KeV, ion current densities of 0.1 to 0.6 mA sq cm and etch times of 1 to 9 min. A smaller range of ion beam parameters (2.0 KeV, 0.2 mA sq cm, 5 to 10 deg and 1 to 5 min.) were also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high (1000), twist angles were small ( or = 3 deg) and tilt-bias angles very small ( or = 1 deg). Preliminary scanning electron microscopy results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.

  10. Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Lee, Seunghyo; Choo, Hyeokseong; Kim, Changheon; Oh, Eunseok; Seo, Dongwan; Lim, Sangwoo

    2016-05-01

    Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H2O2 was compared with that of a conventional etchant of HF/H2O2/H2O mixture (FPM). Herein we first report that a pyramidal structure on Ge (0 0 1) can be prepared by MaCE in dilute H2O2 solution, without the use of HF. Contrastingly, an octagonal trench structure was prepared by 4/5/1 FPM treatment of Ge (0 0 1) surface. This octagonal structure consisted of a square base, four large facets connected to the base, and other four small facets adjacent to the four large facets, which were considered to be (0 0 1), {1 1 0}, and {1 1 1}, respectively. The octagonal trench was formed as a result of the difference in etch rate of Ge depending on the orientation: {1 0 0} > {1 1 0} > {1 1 1}. Ge surfaces treated by MaCE exhibited improved solar cell efficiency due to their improved light absorption, which led to significant increases in the cells' short circuit current and fill factor. The results suggest that optimized MaCE procedures can be an effective method to improve the performance of Ge-based photovoltaic devices.

  11. Effect of Lactic Acid Etching on Bonding Effectiveness of Orthodontic Bracket after Water Storage

    PubMed Central

    Alsulaimani, Fahad F.

    2014-01-01

    Objective. To determine the effect of lactic acid at various concentrations on the shear bond strength of orthodontic brackets bonded with the resin adhesive system before and after water storage. Materials and Methods. Hundred extracted human premolars were divided into 5 treatment groups and etched for 30 seconds with one of the following agents: lactic acid solution with (A) 10%, (B) 20%, (C) 30%, and (D) 50%; group E, 37% phosphoric acid (control). Metal brackets were bonded using a Transbond XT. Bonding effectiveness was assessed by shear bond strength after 24 hours and 6 months of water storage at 37°C. The data were analyzed with 2-way analysis of variance and Tukey's Honestly Significant Difference (HSD) test (α = .001). Results. Lactic acid concentration and water storage resulted in significant differences for brackets bond strength (P < .001). 20% lactic acid had significantly higher mean bond strength values (SD) for all conditions: 24 hours [12.2 (.7) MPa] and 6 months [10.1 (.6) MPa] of water storage. 37% phosphoric acid had intermediate bond strength values for all conditions: 24 hours [8.2 (.6) MPa] and 6 months [6.2 (.6) MPa] of water storage. Also, there were differences in bond strength between storage time, with a reduction in values from 24 hours and 6 months for all experimental groups (P < .001). Conclusion. Lactic acid could be used in place of phosphoric acid as an enamel etchant for bonding of orthodontic brackets. PMID:25006465

  12. Self-masking controlled by metallic seed layer during glass dry-etching for optically scattering surfaces

    SciTech Connect

    Hein, E.; Fox, D.; Fouckhardt, H.

    2010-02-15

    During reactive ion etching in a high density Ar/CF{sub 4} plasma, nonvolatile halogen compounds are generated on the glass surface and act as statistically distributed micromasks. As a consequence surface roughness occurs, which can be used as additional surface functionality in certain classes of applications, where defined optical scattering is desired. The glass etch process described in this contribution enables user-defined scattering characteristics. The deposition of a thin metallic layer of Cu on top of the samples before dry-etching provides an additional seed for the production of micromasks, resulting in higher reproducibility. By varying the etch parameters a multitude of different surface morphologies can be realized both on borosilicate glasses and on fused silica.

  13. Nanotexturing process on microtextured surfaces of silicon solar cells by SF6/O2 reactive ion etching.

    PubMed

    Ji, Hyungyong; Choi, Jaeho; Lim, Gyoungho; Parida, Bhaskar; Kim, Keunjoo; Jo, Jung Hee; Kim, Hong Seub

    2013-12-01

    We investigated a nanotexturing process on the microtextured surface of single crystalline silicon solar cell by the reactive ion etching process in SF6/O2 mixed gas ambient. P-type Si wafer samples were prepared using a chemical wet etching process to address saw damage removal and achieve microtexturing. The microtextured wafers were further processed for nanotexturing by exposure to reactive ions within a circular tray of wafer carrier containing many small holes for uniform etching. As the dry etching times were increased to 2, 4 and finally to 8 min, surface structures were observed in a transition from nanoholes to nanorods, and a variation in wafer color from dark blue to black. The surface nanostructures showed a lowered photoreflectance and enhanced quantum efficiency within the visible light region with wavelengths of less than 679 nm. The nanohole structure etched for 2 min showed enhanced conversion efficiency when compared to the bare sample; however, the nanorod structure etched for 8 min exhibited the decreased efficiency with a reduced short circuit current, indicating that the surface nanostructural damage with the enlarged nanoperimetric surface area is sensitive to surface passivation from the surface recombination process. PMID:24266144

  14. Metal etching with reactive gas cluster ion beams using pickup cell

    SciTech Connect

    Toyoda, Noriaki; Yamada, Isao

    2012-11-06

    Mixed gas cluster ion beams were formed using pickup cell for metal etching. O{sub 2} neutral clusters pick up acetic acid and formed mixed cluster beam. By using O{sub 2}-GCIB with acetic acid, enhancement of Cu etching was observed. Because of dense energy deposition by GCIB, etching of Cu proceeds by CuO formation, enhancement of chemical reaction with acetic acid and desorption of etching products. Surface roughening was not observed on poly crystalline Cu because of the small dependence of etching rate on crystal orientation. Halogen free and low-temperature metal etching with GCIB using pickup cell is possible.

  15. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    NASA Astrophysics Data System (ADS)

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  16. Improve the laser damage resistance of fused silica by wet surface cleaning and optimized HF etch process

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaolong; Liu, Ying; Rao, Huanle; Fu, Shaojun

    2013-07-01

    Fabrication-induced metal contaminations and subsurface damage are generally identified as the laser damage initiators that are responsible for the laser induced damage in fused silica. In this paper, the removal of those two initiators are realized by two methods: wet chemical surface cleaning and optimized HF-based etch process. Two kinds of chemical leaching are used to removing the Ce and other metal impurities respectively. In order prevent the redeposition of the reactive byproducts during HF etch process, we optimized the traditional HF etch process in two ways: absence of NH4F in etch solution and presence of megasonic and ultrasonic agitation during and after etch respectively. And laser damage tests show that these two treatments greatly improve the laser damage resistance of fused silica.

  17. Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces.

    PubMed

    Lehmann, A; Bradac, C; Mildren, R P

    2014-01-01

    Optical techniques have advanced considerably in recent years to enable processing of surfaces with a resolution less than the wavelength of light. Despite the highly selective nature of light-matter interactions, however, efforts to increase resolution to the scale of single atoms are hampered by rapid and efficient dissipation of the absorbed energy to the surrounding matrix. Here we show that two-photon surface excitation using ultraviolet light provides a method for selectively removing carbon from diamond surfaces. Polished surfaces etched by this method develop ultra-deep subwavelength structures with morphologies dependent on the polarization of the incident laser with respect to the crystal axes. As well as revealing a practical and versatile method for nano-patterning of diamond surfaces, we show that the results comprise mesoscopic evidence for bond scission via a highly localized optical interaction that may lead to the development of new optical approaches for ultra-nanoscale (<10 nm) surface structuring. PMID:24594857

  18. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    NASA Astrophysics Data System (ADS)

    Weiying, Ou; Lei, Zhao; Hongwei, Diao; Jun, Zhang; Wenjing, Wang

    2011-05-01

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

  19. Fabrication of superhydrophobic and highly oleophobic silicon-based surfaces via electroless etching method

    NASA Astrophysics Data System (ADS)

    Nguyen, Thi Phuong Nhung; Dufour, Renaud; Thomy, Vincent; Senez, Vincent; Boukherroub, Rabah; Coffinier, Yannick

    2014-03-01

    This study reports on a simple method for the preparation of superhydrophobic and highly oleophobic nanostructured silicon surfaces. The technique relies on metal-assisted electroless etching of silicon in sodium tetrafluoroborate (NaBF4) aqueous solution. Then, silver particles were deposited on the obtained surfaces, changing their overall physical morphology. Finally, the surfaces were coated by either C4F8, a fluoropolymer deposited by plasma, or by SiOx overlayers chemically modified with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (PFTS) through silanization reaction. All these surfaces exhibit a superhydrophobic character (large apparent contact angle and low hysteresis with respect to water). In addition, they present high oleophobic properties, i.e. a high repellency to low surface energy liquids with various contact angle hysteresis, both depending on the morphology and type of coating.

  20. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  1. Investigation of chemical wet-etch surface modification of Ga[sub 0. 5]In[sub 0. 5]P using photoluminescence, X-ray photoelectron spectroscopy, capacitance measurements, and photocurrent-voltage curves

    SciTech Connect

    Kocha, S.S.; Peterson, M.W.; Nelson, A.J.; Rosenwaks, Y.; Arent, D.J.; Turner, J.A. )

    1995-01-12

    Epitaxial Ga[sub 0.5]In[sub 0.5]P films, deposited lattice-matched to GaAs by atmospheric pressure organometallic vapor phase epitaxy, were subjected to various wet-etching processes and the resulting surface was characterized. The steady-state photoluminescence (PL) peak intensity was found to increase 5-fold with some etches, indicating lowered surface recombination rates as a result of etching. Average PL decay times estimated from time-resolved photoluminescence studies also exhibited a correspondingly significant enhancement. Capacitance-voltage and photocurrent-voltage measurements were carried out to investigate changes in energetics of the band edges or alteration in kinetics as a result of the treatments. High resolution X-ray photoelectron spectroscopy revealed a variation of the oxidized species of P, Ga, and In on the surface with etching and were correlated to the PL results. The amount of oxidized material on the surface was lowered after etching in concentrated H[sub 2]SO[sub 4], 1:20:1 HCl:CH[sub 3]COOH:H[sub 2]O[sub 2], and 1:20:1 HCl:H[sub 3]PO[sub 4]:H[sub 2]O[sub 2] and concurred with observations of a higher steady-state PL intensity and longer carrier lifetimes. A nitric acid or aqua regia etch on the other hand yielded an oxide-rich surface with diminished PL. 30 refs., 10 figs., 2 tabs.

  2. CH4/Ar/H2/SF6 Plasma Etching for Surface Oxide Removal of Indium Bumps

    NASA Astrophysics Data System (ADS)

    Huang, Yue; Lin, Chun; Ye, Zhen-Hua; Liao, Qing-Jun; Ding, Rui-Jun

    2015-07-01

    Plasma etching for surface indium oxide removal by methane/argon/hydrogen/sulfur hexafluoride (CH4/Ar/H2/SF6) mixture has been implemented. The morphology of the indium bumps was not deteriorated after the plasma etching. High-resolution O 1 s x-ray photoelectron spectroscopy (XPS) proved that the In-O component decreased from 44.5% for the nonetched sample to 10.8% for the sample after plasma etching. The surface modification of the indium bumps might be in the form of doped fluorine according to the XPS results. The zero-bias resistance derived from current-voltage ( I- V) measurements for plasma-etched infrared detectors was comparable to that for nonetched ones, indicating that such plasma treatment is suitable for processing sensitive materials such as mercury cadmium telluride.

  3. Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

    NASA Astrophysics Data System (ADS)

    Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

    2012-06-01

    Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

  4. Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates

    SciTech Connect

    Bruno, A.; Lange, G. de; Asaad, S.; Enden, K. L. van der; Langford, N. K.; DiCarlo, L.

    2015-05-04

    We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.

  5. Simplified Etching

    ERIC Educational Resources Information Center

    Saranovitz, Norman S.

    1969-01-01

    The process for making a celluoid etching (drypaint technique) is feasible for the high school art room because the use of acid is avoided. The procedure outlined includes; 1) preparation of the plate, 2) inking the plate, 3) printing the plate, 4) tools necessary for the preceding. (BF)

  6. Plasma-surface interactions during Si etching in Cl- and Br-based plasmas: An empirical and atomistic study

    NASA Astrophysics Data System (ADS)

    Tsuda, Hirotaka; Nagaoka, Tatsuya; Miyata, Hiroki; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2009-10-01

    Nanometer-scale control of Si etching in Cl2- and HBr-containing plasmas is indispensable in the fabrication of gate electrodes and shallow trench isolation. There are profile anomalies of sidewalls such as tapering, bowing, footing (or corner rounding), and notching, which largely affect the critical dimension. There are also anomalies of bottom surfaces such as microtrenching and roughness (or residues), which affect the bottom uniformity, and lead to recess and damage in gate fabrication. Atomic-scale cellular model (ASCeM) based on the Monte Carlo method has been developed to simulate plasma-surface interactions and the profile evolution during etching, including passivation layer formation, and also ion reflection and penetration on feature surfaces. We have also studied atomistic plasma-surface interactions by classical molecular dynamics (MD) simulation, where an improved Stillinger-Weber interatomic potential was newly developed. The numerical results were compared with etching experiments and also with surface diagnostics including in-situ Fourier-transform-infrared reflection absorption spectroscopy (FTIR-RAS), to reveal the origin of profile anomalies on feature surfaces during etching, and then to achieve the precise control of etched profiles.

  7. Asymmetrically modulating the insulator-metal transition of thermochromic VO2 films upon heating and cooling by mild surface-etching

    NASA Astrophysics Data System (ADS)

    Kang, Litao; Xie, Lingli; Chen, Zhang; Gao, Yanfeng; Liu, Xuguang; Yang, Yongzhen; Liang, Wei

    2014-08-01

    The reversible thermochromic insulator-metal transition (IMT) of VO2 is believed to start from suitable nucleating defects, but the role of specific defects during the IMT has remained elusive. In this work, we performed a simple, mild but effective acid etching treatment on pure-phase VO2 films to adjust the surface state of the VO2 particles while leaving the phase composition, crystallinity, grain size, and stoichiometry unchanged. By continuously etching VO2 particles, the poor crystallized layers on the particle surface were removed, and the particle connections became loose, resulting in significant shifts of the IMT toward higher temperatures. In stark contrast, the reversal IMT (i.e., metal-insulator transition, MIT) parameters remained relatively steady during the etching process. These experimental results correlate directly the IMT characteristics with the states (e.g., local defects, stress, and connection) of the particle surface, and further enable us to asymmetrically modulate the IMT parameters, while keeping the MIT (i.e., metal-insulator transition, the reversal of IMT) almost constant. This work illustrates the potential for particle surface engineering in thermochromic VO2 films.

  8. Fabrication of long-range surface plasmon polaritons waveguide by wet chemical etching

    NASA Astrophysics Data System (ADS)

    Xie, Ying; Liu, Tong; Zhao, Xuliang; Zhang, Meiling; Chen, Changming; Wang, Fei; Sun, Xiaoqiang; Zhang, Daming

    2014-06-01

    The fabrication of long-range surface plasmon polaritons (LRSPPs) waveguides based on a thin Au stripe embedded in poly(methyl-methacrylate-glycidly-methacrylate) polymers was investigated. By patterning the photoresist, a wet chemical etching technique was used to avoid sharp pin-like and shark-fin-like structures on the edges of the Au stripe. The surface morphology of the Au film and polymer cladding were studied by atomic force microscopy (AFM), as well as by using the waveguide configuration of the Au stripe. AFM images proved the elimination of parasitic structures. A 2 cm long, 4 μm wide, and 25 nm thick Au stripe waveguide exhibited a propagation loss of approximately 4.3 dB cm-1 measured by the cut-back method and end-fire excitation of LRSPP mode guiding at 1550 nm. The demonstration of optical signal transmission indicates that the LRSPP waveguide fabricated by wet chemical etching is a potential solution to on-chip optical interconnections.

  9. Comparative Evaluation of Tensile – Bond Strength of An Orthodontic Adhesive with and without Fluoride Application, After Acid Etching -An Invitro Study

    PubMed Central

    Yugandhar, G; Ramana, I Venkata; Srinivas, K; Yadav, S. Sarjeev Singh

    2015-01-01

    Background Fixed appliances hinder the effective control of plaque accumulation and white spot lesions may develop under the ill fitting bands or adjacent to the stainless steel brackets during orthodontic treatment particularly the etching process. Aims and Objectives Comparative study of tensile bond strength of an orthodontic adhesive with and without fluoride application after acid etching to know the effect of fluoride on bond strength. Materials and Methods This study is carried out on 90 non carious human premolar teeth, and divided in 6 groups with each group of 15 specimens. In those Groups I and IV were control group acid etch treatment, Group II and V is 1.23% APF gel (acid etch plus APF gel treatment,) and group III and VI is 8% SnF2 (acid etch plus SnF2 treatment). Samples of Group I, II and III bond strength were tested after 24 h and groups IV, V and VI after one month on microtechtensometer machine. The scanning electron microscope (SEM) investigation was carried out for the 2 specimens for the control group after acid etch and 4 specimens after acid etch with fluoride application for fluoride groups. Results Control and SnF2 treated groups was found to be nearly similar to the control group whereas APF treated group showed less focal holes than the other 2 groups. Conclusion Fluoride application after acid etching without having an adverse effect on bond strength but we can prevent the white spot lesions and caries. PMID:26023648

  10. Transparent, superhydrophobic, and wear-resistant surfaces using deep reactive ion etching on PDMS substrates.

    PubMed

    Ebert, Daniel; Bhushan, Bharat

    2016-11-01

    Surfaces that simultaneously exhibit superhydrophobicity, low contact angle hysteresis, and high transmission of visible light are of interest for many applications, such as optical devices, solar panels, and self-cleaning windows. Superhydrophobicity could also find use in medical devices where antifouling characteristics are desirable. These applications also typically require mechanical wear resistance. The fabrication of such surfaces is challenging due to the competing goals of superhydrophobicity and transmittance in terms of the required degree of surface roughness. In this study, deep reactive ion etching (DRIE) was used to create rough surfaces on PDMS substrates using a O2/CF4 plasma. Surfaces then underwent an additional treatment with either octafluorocyclobutane (C4F8) plasma or vapor deposition of perfluorooctyltrichlorosilane (PFOTCS) following surface activation with O2 plasma. The effects of surface roughness and the additional surface modifications were examined with respect to the contact angle, contact angle hysteresis, and optical transmittance. To examine wear resistance, a sliding wear experiment was performed using an atomic force microscope (AFM). PMID:27454031

  11. Tailoring the surface of ZnO nanorods into corrugated nanorods via a selective chemical etch method

    NASA Astrophysics Data System (ADS)

    Duan, Xiangyang; Chen, Guangde; Li, Chu; Yin, Yuan; Jin, Wentao; Guo, Lu’an; Ye, Honggang; Zhu, Youzhang; Wu, Yelong

    2016-07-01

    Using the chemical vapour deposition method, we successfully converted smooth ZnO nanorods (NRs) into corrugated NRs by simply increasing the reaction time. The surface morphology and crystallographic structure of the corrugated NRs were investigated. The corrugated NRs were decorated by alternant (11\\bar{2}1) and (11\\bar{2}\\bar{1}) planes at the exposed side surfaces while the conventional \\{10\\bar{1}0\\} planes disappeared. No twinning boundaries were found in the periodically corrugated structures, indicating that they were type II corrugated NRs. Further investigation told us that they were selectively etched. We introduced a hydrothermal method to synthesize the smooth ZnO NRs and then etched them in a tube furnace at 950 °C with a flow of carbon monoxide. By separating the growth stage and the selective etching stage, we explicitly demonstrated a successfully selective etching effect on ZnO NRs with a carbon monoxide reducing atmosphere for the first time. An etching mechanism based on the selective reaction between carbon monoxide and the different exposed surfaces was proposed. Our results will improve the understanding of the growth mechanism on coarse or corrugated NRs and provide a new strategy for the application of surface controlled nanostructured materials.

  12. Tailoring the surface of ZnO nanorods into corrugated nanorods via a selective chemical etch method.

    PubMed

    Duan, Xiangyang; Chen, Guangde; Li, Chu; Yin, Yuan; Jin, Wentao; Guo, Lu'an; Ye, Honggang; Zhu, Youzhang; Wu, Yelong

    2016-07-22

    Using the chemical vapour deposition method, we successfully converted smooth ZnO nanorods (NRs) into corrugated NRs by simply increasing the reaction time. The surface morphology and crystallographic structure of the corrugated NRs were investigated. The corrugated NRs were decorated by alternant [Formula: see text] and [Formula: see text] planes at the exposed side surfaces while the conventional [Formula: see text] planes disappeared. No twinning boundaries were found in the periodically corrugated structures, indicating that they were type II corrugated NRs. Further investigation told us that they were selectively etched. We introduced a hydrothermal method to synthesize the smooth ZnO NRs and then etched them in a tube furnace at 950 °C with a flow of carbon monoxide. By separating the growth stage and the selective etching stage, we explicitly demonstrated a successfully selective etching effect on ZnO NRs with a carbon monoxide reducing atmosphere for the first time. An etching mechanism based on the selective reaction between carbon monoxide and the different exposed surfaces was proposed. Our results will improve the understanding of the growth mechanism on coarse or corrugated NRs and provide a new strategy for the application of surface controlled nanostructured materials. PMID:27276661

  13. Surface Characterization and Osteoconductivity Evaluation of Micro/Nano Surface Formed on Titanium Using Anodic Oxidation Combined with H2O2 Etching and Hydrothermal Treatment.

    PubMed

    Park, Eun-Jin; Song, Yo-Han; Hwang, Moon-Jin; Song, Ho-Jun; Park, Yeong-Joon

    2015-08-01

    In this study, surface characteristics and osteoconductivity were investigated for the micro/nanostructured oxide layers fabricated on titanium using anodic oxidation (ANO), chemical etching (Et), and hydrothermal treatment (HT). Commercially pure titanium (CP-Ti) disks were anodic-oxidized using DC-type power supply in 1 M phosphoric acid electrolyte (P-ANO group). These specimens were further chemically etched using 30% H2O2 solution at 60 °C for 10 min (P-ANO-Et group). The P-ANO-Et-HT group was fabricated by hydrothermally treating the P-ANO-Et specimens in phosphorus-containing alkaline solution at 190 °C for 8 hrs. The P-ANO group showed a porous surface that was evenly covered with micro- and sub-micro pores. The size of these pores was decreased in the P-ANO-Et group. The P-ANO-Et-HT group showed a porous surface that was covered with nano-sized crystallites. Anatase TiO2 structure was observed in P-ANO-Et-HT group. The results of XPS demonstrated that the P-ANO-Et-HT group had a well-crystallized TiC2 structure, while the P-ANO and P-ANO-Et groups had an amorphous and phosphate-containing structure. Hydrophilicity of the P-ANO-Et-HT group was the highest. After MG63 osteoblast-like cells were cultured on the specimens for 3 hrs, SEM images of the cells cultured on P-ANO-Et-HT group specimens showed low initial adhesion. However, the osteoconductivity of these specimens increased more rapidly compared to that of the micro-structured surfaces. These results could be applied to fabricate titanium implants with an optimum micro/nano-surface for enhancing their osteoconductivity. PMID:26369213

  14. Modifying the surface charge of single track-etched conical nanopores in polyimide.

    PubMed

    Ali, M; Schiedt, B; Healy, K; Neumann, R; Ensinger, W

    2008-02-27

    Chemical modification of nanopore surfaces is of great interest as it means that the surface composition is no longer fixed by the choice of substrate material, even to the point where large biomolecules can be attached to the pore walls. Controlling nanopore transport characteristics is one important application of surface modification which is very relevant given the significant interest in sensors based on the transport of ions and molecules through nanopores. Reported here is a method to change the surface charge polarity of single track-etched conical nanopores in polyimide, which also has the potential to attach more complex molecules to the carboxyl groups on the nanopore walls. These carboxyl groups were converted into terminal amino groups, first by activation with N-(3-dimethylaminopropyl)-N-ethylcarbodiimide (EDC) and N-hydroxysuccinimide (NHS) followed by the covalent coupling of ethylenediamine. This results in a changed surface charge polarity. Regeneration of a carboxyl-terminated surface was also possible, by reaction of the amino groups with succinic anhydride. The success of these reactions was confirmed by measurements of the pore's pH sensitive current-voltage (I-V) characteristics before and after the chemical modification, which depend on surface charge. The permselectivity of the pores also changed accordingly with the modification. PMID:21730744

  15. Modifying the surface charge of single track-etched conical nanopores in polyimide

    NASA Astrophysics Data System (ADS)

    Ali, M.; Schiedt, B.; Healy, K.; Neumann, R.; Ensinger, W.

    2008-02-01

    Chemical modification of nanopore surfaces is of great interest as it means that the surface composition is no longer fixed by the choice of substrate material, even to the point where large biomolecules can be attached to the pore walls. Controlling nanopore transport characteristics is one important application of surface modification which is very relevant given the significant interest in sensors based on the transport of ions and molecules through nanopores. Reported here is a method to change the surface charge polarity of single track-etched conical nanopores in polyimide, which also has the potential to attach more complex molecules to the carboxyl groups on the nanopore walls. These carboxyl groups were converted into terminal amino groups, first by activation with N-(3-dimethylaminopropyl)-N-ethylcarbodiimide (EDC) and N-hydroxysuccinimide (NHS) followed by the covalent coupling of ethylenediamine. This results in a changed surface charge polarity. Regeneration of a carboxyl-terminated surface was also possible, by reaction of the amino groups with succinic anhydride. The success of these reactions was confirmed by measurements of the pore's pH sensitive current-voltage (I-V) characteristics before and after the chemical modification, which depend on surface charge. The permselectivity of the pores also changed accordingly with the modification.

  16. Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas

    NASA Astrophysics Data System (ADS)

    Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2011-08-01

    Addition of oxygen to Cl2 discharge is widely used in Si etching for the fabrication of gate electrodes and shallow trench isolation. As the control of etching processes becomes more critical, a deeper understanding of plasma-surface interactions is required for the formation of roughened surfaces during etching. In particular, a small amount of O2 often leads to profile anomalies such as residues, micropillars, and roughened surfaces. In this study, we focus on the mechanism underlying local surface oxidation during Si etching in Cl2/O2 plasmas, and analyze the relationship between local surface oxidation and surface roughness on the nanometer scale, by a classical molecular dynamics (MD) simulation. The numerical results indicated that O radicals tend to break Si-Si bonds and distort the Si lattice structure; thus, nanometer-scale micromasks tend to be formed on convex roughened surfaces, owing to the reactivity of O radicals with substrate Si atoms and Cl atoms. The results also imply that the nanometer-scale micromasks significantly affect the formation of roughened surfaces and evolution of micropillars.

  17. Synthesis and characterization of hybrid micro/nano-structured NiTi surfaces by a combination of etching and anodizing

    NASA Astrophysics Data System (ADS)

    Huan, Z.; Fratila-Apachitei, L. E.; Apachitei, I.; Duszczyk, J.

    2014-02-01

    The purpose of this study was to generate hybrid micro/nano-structures on biomedical nickel-titanium alloy (NiTi). To achieve this, NiTi surfaces were firstly electrochemically etched and then anodized in fluoride-containing electrolyte. With the etching process, the NiTi surface was micro-roughened through the formation of micropits uniformly distributed over the entire surface. Following the subsequent anodizing process, self-organized nanotube structures enriched in TiO2 could be superimposed on the etched surface under specific conditions. Furthermore, the anodizing treatment significantly reduced water contact angles and increased the surface free energy compared to the surfaces prior to anodizing. The results of this study show for the first time that it is possible to create hybrid micro/nano-structures on biomedical NiTi alloys by combining electrochemical etching and anodizing under controlled conditions. These novel structures are expected to significantly enhance the surface biofunctionality of the material when compared to conventional implant devices with either micro- or nano-structured surfaces.

  18. Bubble-Regulated Silicon Nanowire Synthesis on Micro-Structured Surfaces by Metal-Assisted Chemical Etching.

    PubMed

    Li, Yinxiao; Duan, Chuanhua

    2015-11-10

    In this work, we study silicon nanowire synthesis via one-step metal-assisted chemical etching (MACE) on microstructured silicon surfaces with periodic pillar/cavity array. It is found that hydrogen gas produced from the initial anodic reaction can be trapped inside cavities and between pillars, which serves as a mask to prevent local etching, and leads to the formation of patterned vertically aligned nanowire array. A simple model is presented to demonstrate that such bubble entrapment is due to the significant adhesion energy barrier, which is a function of pillar/cavity geometry, contact angle, and nanowire length to be etched. The bubble entrapment can be efficiently removed when extra energy is introduced by sonication to overcome this energy barrier, resulting in nanowire growth in all exposed surfaces. This bubble-regulated MACE process on microstructured surfaces can be used to fabricate nanowire arrays with desired morphologies. PMID:26411775

  19. Morphology and chemical termination of HF-etched Si{sub 3}N{sub 4} surfaces

    SciTech Connect

    Liu, Li-Hong; Debenedetti, William J. I.; Peixoto, Tatiana; Gokalp, Sumeyra; Shafiq, Natis; Veyan, Jean-François; Chabal, Yves J.; Michalak, David J.; Hourani, Rami

    2014-12-29

    Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-H{sub x}, Si-H, or fluorine termination. An investigation combining infrared and x-ray photoelectron spectroscopies with atomic force and scanning electron microscopy imaging reveals that under some processing conditions, salt microcrystals are formed and stabilized on the surface, resulting from products of Si{sub 3}N{sub 4} etching. Rinsing in deionized water immediately after HF etching for at least 30 s avoids such deposition and yields a smooth surface without evidence of Si-H termination. Instead, fluorine and oxygen are found to terminate a sizeable fraction of the surface in the form of Si-F and possibly Si-OH bonds. The relatively unique fluorine termination is remarkably stable in both air and water and could lead to further chemical functionalization pathways.

  20. Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface

    PubMed Central

    2013-01-01

    Wurtzite ZnO thin films with different epitaxial relationships are obtained on as-received and etched (001), (011), and (111) SrTiO3 (STO) by metal-organic chemical vapor deposition (MOCVD). ZnO films exhibit nonpolar (1120) orientation with in-plane orientation relationship of <0001>ZnO//<110>STO on as-received (001) STO, and polar c-axis growth with <1100>ZnO//<110>STO on etched (001) STO substrates. ZnO films change from polar (0001) to semipolar (1012) oriented on as-received and etched (011) STO. On as-received and etched (111) STO, ZnO films show the same growing direction of polar (0001), but different in-plane orientations with 30° rotation. The change of epitaxial relationship of ZnO films on as-received and etched (001), (011), and (111) STO substrates is accompanied with the increase of lattice mismatch, decrease of bond density, and increase of substrate surface roughness. In other words, the epitaxial relationships of ZnO/STO heterointerfaces can be controlled by etching the substrates. These results show that polar, nonpolar, and semipolar ZnO films for different applications can be grown epitaxially on STO substrates by MOCVD. PMID:23305301

  1. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    SciTech Connect

    Bouchoule, Sophie Cambril, Edmond; Guilet, Stephane; Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  2. Plasma treatment of dentin surfaces for improving self-etching adhesive/dentin interface bonding

    PubMed Central

    Dong, Xiaoqing; Li, Hao; Chen, Meng; Wang, Yong; Yu, Qingsong

    2015-01-01

    This study is to evaluate plasma treatment effects on dentin surfaces for improving self-etching adhesive and dentin interface bonding. Extracted unerupted human third molars were used after crown removal to expose dentin. One half of each dentin surface was treated with atmospheric non-thermal argon plasmas, while another half was untreated and used as the same tooth control. Self-etching adhesive and universal resin composite was applied to the dentin surfaces as directed. After restoration, the adhesive-dentin bonding strength was evaluated by micro-tensile bonding strength (μTBS) test. Bonding strength data was analyzed using histograms and Welch’s t-test based on unequal variances. μTBS test results showed that, with plasma treatment, the average μTBS value increased to 69.7±11.5 MPa as compared with the 57.1±17.5 MPa obtained from the untreated controls. After 2 months immersion of the restored teeth in 37 °C phosphate buffered saline (PBS), the adhesive-dentin bonding strengths of the plasma-treated specimens slightly decreased from 69.7±11.5 MPa to 63.9±14.4 MPa, while the strengths of the untreated specimens reduced from 57.1±17.5 MPa to 48.9±14.6 MPa. Water contact angle measurement and scanning electron microscopy (SEM) examination verified that plasma treatment followed by water rewetting could partially open dentin tubules, which could enhance adhesive penetration to form thicker hybrid layer and longer resin tags and consequently improve the adhesive/dentin interface quality. PMID:26273561

  3. The stress relaxation characteristics of composite matrices etched to produce nanoscale surface features.

    PubMed

    Mirani, Rahul D; Pratt, Jonathan; Iyer, Pooja; Madihally, Sundararajan V

    2009-02-01

    Many synthetic and xenogenic natural matrices have been explored in tissue regeneration, however, they lack either mechanical strength or cell colonization characteristics found in natural tissue. Moreover natural matrices such as small intestinal submucosa (SIS) lack sample to sample homogeneity, leading to unpredictable clinical outcomes. This work explored a novel fabrication technique by blending together the useful characteristics of synthetic and natural polymers to form a composite structure by using a NaOH etching process that produces nanoscale surface features. The composite scaffold was formed by sandwiching a thin layer of PLGA between porous layers of gelatin-chitosan. The etching process increased the surface roughness of PLGA membrane, allowing easy spreading of the hydrophilic gelatin-chitosan solution on its hydrophobic surface and reducing the scaffold thickness by nearly 50% than otherwise. The viscoelastic properties of the scaffold, an area of mechanical analysis which remains largely unexplored in tissue regeneration was assessed. Stress relaxation experiments of the "ramp and hold" type performed at variable ranges of temperature (25 degrees C and 37 degrees C), loading rates (3.125% s(-1) and 12.5% s(-1)) and relaxation times (60 s, 100 s and 200 s) found stress relaxation to be sensitive to temperature and the loading rate but less dependent on the relaxation time. Stress relaxation behavior of the composite matrix was compared with SIS structures at 25 degrees C (hydrated), 3.125% s(-1) loading rate and 100 s relaxation time which showed that the synthetic matrix was found to be strain softening as compared to the strain hardening behavior exhibited by SIS. Popularly used quasi-linear viscoelastic (QLV) model to describe biomechanics of soft tissues was utilized. The QLV model predicted the loading behavior with an average error of 3%. The parameters of the QLV model predicted using nonlinear regression analysis appear to be in concurrence

  4. Reactive ion etching-assisted surface-enhanced Raman scattering measurements on the single nanoparticle level

    SciTech Connect

    Wang, Si-Yi; Jiang, Xiang-Xu; Wei, Xin-Pan; Lee, Shuit-Tong E-mail: yaohe@suda.edu.cn; He, Yao E-mail: yaohe@suda.edu.cn; Xu, Ting-Ting

    2014-06-16

    Single-nanoparticle surface-enhanced Raman scattering (SERS) measurement is of essential importance for both fundamental research and practical applications. In this work, we develop a class of single-particle SERS approaches, i.e., reactive ion etching (RIE)-assisted SERS measurements correlated with scanning electron microscopy (SEM) strategy (RIE/SERS/SEM), enabling precise and high-resolution identification of single gold nanoparticle (AuNP) in facile and reliable manners. By using AuNP-coated silicon wafer and quartz glass slide as models, we further employ the developed RIE/SERS/SEM method for interrogating the relationship between SERS substrates and enhancement factor (EF) on the single particle level. Together with theoretical calculation using an established finite-difference-time-domain (FDTD) method, we demonstrate silicon wafer as superior SERS substrates, facilitating improvement of EF values.

  5. Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask

    PubMed Central

    2011-01-01

    We demonstrate an enhanced photo-sensitivity (PS) through an increased light-trapping using surface nano-structuring technique by inductively coupled plasma (ICP) etching on multi-walled carbon nanotube (MWCNT) etch masked Si with hexamethyl-disilazane (HMDS) dispersion. In order for a systematic comparison, four samples are prepared, respectively, by conventional photolithography and ICP etching using MWCNT as a etch mask. MWCNT-etched Si with HMDS dispersion shows the highest RMS roughness and the lowest reflectance of the four. Two test device structures are fabricated with active regions of bare-Si as a reference and MWCNT etch masked Si with HMDS dispersion. The increased light-trapping was most significant at mid-UV, somewhat less at visible and less noticeable at infrared. With an ICP-etched Si using CNT HMDS dispersion, PS is very sharply increased. This result can lead to applications in optoelectronics where the enhancement in light-trapping is important. PMID:22040026

  6. Materials for single-etch double patterning process: surface curing agent and thermal cure resist

    NASA Astrophysics Data System (ADS)

    Bae, Young C.; Liu, Yi; Cardolaccia, Thomas; McDermott, John C.; Trefonas, Peter; Spizuoco, Ken; Reilly, Michael; Pikon, Amandine; Joesten, Lori; Zhang, Gary G.; Barclay, George G.; Simon, Julia; Gaurigan, Stéphanie

    2009-03-01

    Two different pattern curing techniques were developed to stabilize first lithographic images for the single-etch double patterning process. The first method uses a surface curing agent (SCA) that is coated on top of the patterned surface to form a protective coating layer during the curing bake process. It was found that the surface curing process with SCA offers minimum CD changes before and after the double patterning process. Virtually no CD change was observed with the first lithographic images at various curing bake temperatures ranging from 120 ~160°C indicating the curing reaction is limited on the patterned surface. The second method uses a thermal cure resist (TCR) that is a special 193nm photoresist with a crosslinkable functional group to form an insoluble network upon heating at higher temperature. A single-step curing process of the first lithographic images was achieved using TCR by baking the patterned images at 180°C for 60sec. A cross-line contact hole double patterning method was used to evaluate these two different curing techniques and both SCA and TCR successfully demonstrated their capability to print 45nm contact holes with excellent CD uniformity in immersion lithography (1.35NA) with a 45nm half pitch mask. It was also confirmed that both SCA and TCR can be extended to the top-coat free immersion double patterning process using an embedded barrier layer technique.

  7. A new reactive atom plasma technology (RAPT) for precision machining: the etching of ULE optical surfaces

    NASA Astrophysics Data System (ADS)

    Fanara, Carlo; Shore, Paul; Nicholls, John R.; Lyford, Nicholas; Sommer, Phil; Fiske, Peter

    2006-06-01

    The next generation of 30-100 metre diameter extremely large telescopes (ELTs) requires large numbers of hexagonal primary mirror segments. As part of the Basic Technology programme run jointly by UCL and Cranfield University, a reactive atomic plasma technology (RAP(tm)) emerged from the US Lawrence Livermore National Laboratory (LLNL), is employed for the finishing of these surfaces. Results are presented on this novel etching technology. The Inductively Coupled Plasma (ICP) operated at atmospheric pressure using argon, activates the chemical species injected through its centre and promotes the fluorine-based chemical reactions at the surface. Process assessment trials on Ultra Low Expansion (ULE(tm)) plates, previously ground at high material removal rates, have been conducted. The quality of the surfaces produced on these samples using the RAP process are discussed. Substantial volumetric material removal rates of up to 0.446(21) mm 3/s at the highest process speed (1,200 mm/min) were found to be possible without pre-heating the substrate. The influences of power transfer, process speed and gas concentration on the removal rates have been determined. The suitability of the RAP process for revealing and removing sub-surface damage induced by high removal rate grinding is discussed. The results on SiC samples are reported elsewhere in this conference.

  8. Vascular stents with submicrometer-scale surface patterning realized via titanium deep reactive ion etching

    NASA Astrophysics Data System (ADS)

    Gott, Shannon C.; Jabola, Benjamin A.; Rao, Masaru P.

    2015-08-01

    Herein, we report progress towards realization of vascular stents that will eventually provide opportunity for evaluating cellular response to rationally-designed, submicrometer-scale surface patterning in physiologically-relevant contexts, i.e. those that provide exposure to the complex multicellular milieu, flow-induced shear, and tissue-device interactions present in vivo. Specifically, using our novel titanium deep reactive ion etching technique (Ti DRIE), we discuss recent advances that have enabled: (a) fabrication of precisely-defined, grating-based surface patterns on planar Ti foils with minimum feature sizes as small as 0.15 μm (b) creation of cylindrical stents from micromachined planar Ti foils; and (c) integration of these processes to produce the first submicrometer-scale surface-patterned Ti stents that are compatible with conventional balloon catheter deployment techniques. We also discuss results from elastoplastic finite element simulations and preliminary mechanical testing of these devices to assess their mechanical performance. These efforts represent key steps towards our long-term goal of developing a new paradigm in stenting, where rationally-designed surface patterning provides a physical means for facilitating healing, and thus, improving outcomes in vascular intervention applications.

  9. Anisotropic multi-step etching for large-area fabrication of surface microstructures on stainless steel to control thermal radiation

    NASA Astrophysics Data System (ADS)

    Shimizu, M.; Yamada, T.; Sasaki, K.; Takada, A.; Nomura, H.; Iguchi, F.; Yugami, H.

    2015-04-01

    Controlling the thermal radiation spectra of materials is one of the promising ways to advance energy system efficiency. It is well known that the thermal radiation spectrum can be controlled through the introduction of periodic surface microstructures. Herein, a method for the large-area fabrication of periodic microstructures based on multi-step wet etching is described. The method consists of three main steps, i.e., resist mask fabrication via photolithography, electrochemical wet etching, and side wall protection. Using this method, high-aspect micro-holes (0.82 aspect ratio) arrayed with hexagonal symmetry were fabricated on a stainless steel substrate. The conventional wet etching process method typically provides an aspect ratio of 0.3. The optical absorption peak attributed to the fabricated micro-hole array appeared at 0.8 μm, and the peak absorbance exceeded 0.8 for the micro-holes with a 0.82 aspect ratio. While argon plasma etching in a vacuum chamber was used in the present study for the formation of the protective layer, atmospheric plasma etching should be possible and will expand the applicability of this new method for the large-area fabrication of high-aspect materials.

  10. Evolutionary determination of kinetic Monte Carlo rates for the simulation of evolving surfaces in anisotropic etching of silicon

    NASA Astrophysics Data System (ADS)

    Xing, Y.; Gosálvez, M. A.; Sato, K.; Tian, M.; Yi, H.

    2012-08-01

    This study explores for the first time the possibility of using an evolutionary algorithm (EA) for the determination of atomistic rates for use in kinetic Monte Carlo (KMC) simulations of anisotropic etching of silicon for the manufacture of microelectromechanical systems (MEMS). Traditionally, KMC rates are determined based on (i) computationally expensive density functional theory (DFT) calculations or, when possible, (ii) a combination of physical insight and a labor-intensive, manual procedure where, e.g., experimental and simulated surface morphologies are visually matched for a collection of surface orientations. Compared to these approaches, the evolutionary KMC method proposed in this study provides a more flexible, autonomous procedure to describe correctly a wide variety of etching conditions. We focus on the use of a functional representation of the atomistic rates, referred to as the removal probability function (RPF). This simplifies the EA search space to just a few parameters and reduces the number of required experimental data points to just a few etch rates. By proposing two alternative RPFs with four and six parameters, respectively, we show that the ability to explain the orientation dependence of the etch rate for a wide variety of etchants increases with the number of parameters and conclude that the six-parameter RPF provides sufficiently good simulations for a wide range of etching conditions, including KOH, KOH+IPA, TMAH and TMAH+Triton at different concentrations and temperatures. By uncovering the relationships between the parameters and the concentration of the etchant, it is possible to extend the simulations to nonmeasured etching conditions. Although the use of an RPF effectively restricts the search to a subspace of the atomistic rates, the present results suggest that physically meaningful KMC rates can probably be determined in the near future by direct comparison of macroscopic experiments and simulations through the use of

  11. Femtosecond laser structuring of silver-containing glass: Silver redistribution, selective etching, and surface topology engineering

    SciTech Connect

    Desmoulin, Jean-Charles; Petit, Yannick; Cardinal, Thierry; Canioni, Lionel; Dussauze, Marc; Lahaye, Michel; Gonzalez, Hernando Magallanes; Brasselet, Etienne

    2015-12-07

    Femtosecond direct laser writing in silver-containing phosphate glasses allows for the three-dimensional (3D) implementation of complex photonic structures. Sample translation along or perpendicular to the direction of the beam propagation has been performed, which led to the permanent formation of fluorescent structures, either corresponding to a tubular shape or to two parallel planes at the vicinity of the interaction voxel, respectively. These optical features are related to significant modifications of the local material chemistry. Indeed, silver depletion areas with a diameter below 200 nm were evidenced at the center of the photo-produced structures while photo-produced luminescence properties are attributed to the formation of silver clusters around the multiphoton interaction voxel. The laser-triggered oxidation-reduction processes and the associated photo-induced silver redistribution are proposed to be at the origin of the observed original 3D luminescent structures. Thanks to such material structuring, surface engineering has been also demonstrated. Selective surface chemical etching of the glass has been obtained subsequently to laser writing at the location of the photo-produced structures, revealing features with nanometric depth profiles and radial dimensions strongly related to the spatial distributions of the silver clusters.

  12. Femtosecond laser structuring of silver-containing glass: Silver redistribution, selective etching, and surface topology engineering

    NASA Astrophysics Data System (ADS)

    Desmoulin, Jean-Charles; Petit, Yannick; Canioni, Lionel; Dussauze, Marc; Lahaye, Michel; Gonzalez, Hernando Magallanes; Brasselet, Etienne; Cardinal, Thierry

    2015-12-01

    Femtosecond direct laser writing in silver-containing phosphate glasses allows for the three-dimensional (3D) implementation of complex photonic structures. Sample translation along or perpendicular to the direction of the beam propagation has been performed, which led to the permanent formation of fluorescent structures, either corresponding to a tubular shape or to two parallel planes at the vicinity of the interaction voxel, respectively. These optical features are related to significant modifications of the local material chemistry. Indeed, silver depletion areas with a diameter below 200 nm were evidenced at the center of the photo-produced structures while photo-produced luminescence properties are attributed to the formation of silver clusters around the multiphoton interaction voxel. The laser-triggered oxidation-reduction processes and the associated photo-induced silver redistribution are proposed to be at the origin of the observed original 3D luminescent structures. Thanks to such material structuring, surface engineering has been also demonstrated. Selective surface chemical etching of the glass has been obtained subsequently to laser writing at the location of the photo-produced structures, revealing features with nanometric depth profiles and radial dimensions strongly related to the spatial distributions of the silver clusters.

  13. Superoleophobic textured copper surfaces fabricated by chemical etching/oxidation and surface fluorination.

    PubMed

    Ou, Junfei; Hu, Weihua; Liu, Sheng; Xue, Mingshan; Wang, Fajun; Li, Wen

    2013-10-23

    We report a convenient route to fabricate superoleophobic surfaces (abridged as SOS) on copper substrate by combining a two-step surface texturing process (first, the substrate is immersed in an aqueous solution of HNO3 and cetyltrimethyl ammonium bromide, and then in an aqueous solution of NaOH and (NH4)2S2O8) and succeeding surface fluorination with 1H,1H,2H,2H-perfluorodecanethiol (PFDT) or 1-decanethiol. The surface morphologies and compositions were characterized by field emission scanning electron microscopy and X-ray diffraction, respectively. The results showed that spherical micro-pits (SMP) with diameter of 50-100 μm were formed in the first step of surface texturing; in the second step, Cu(OH)2 or/and CuO with structures of nanorods/microflowers/microballs were formed thereon. The surface wettability was further assessed by optical contact angle meter by using water (surface tension of 72.1 mN m(-1) at 20°C), rapeseed oil (35.7 mN m(-1) at 20°C), and hexadecane (25.7 mN m(-1) at 20°C) as probe liquids. The results showed that, as the surface tension decreasing, stricter choosing of surface structures and surface chemistry are required to obtain SOS. Specifically, for hexadecane, which records the lowest surface tension, the ideal surface structures are a combination of densely distributed SMP and nanorods, and the surface chemistry should be tuned by grafted with low-surface-energy molecules of PFDT. Moreover, the stability of the so-fabricated sample was tested and the results showed that, under the testing conditions, superhydrophobicity and superoleophobicity may be deteriorated after wear/humidity resistance test. Such deterioration may be due to the loss of outermost PFDT layer or/and the destruction of the above-mentioned ideal surface structures. For UV and oxidation resistance, the sample remained stable for a period of 10 days. PMID:24073938

  14. Biomimetic hydrophobic surface fabricated by chemical etching method from hierarchically structured magnesium alloy substrate

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Yin, Xiaoming; Zhang, Jijia; Wang, Yaming; Han, Zhiwu; Ren, Luquan

    2013-09-01

    As one of the lightest metal materials, magnesium alloy plays an important role in industry such as automobile, airplane and electronic product. However, magnesium alloy is hindered due to its high chemical activity and easily corroded. Here, inspired by typical plant surfaces such as lotus leaves and petals of red rose with super-hydrophobic character, the new hydrophobic surface is fabricated on magnesium alloy to improve anti-corrosion by two-step methodology. The procedure is that the samples are processed by laser first and then immersed and etched in the aqueous AgNO3 solution concentrations of 0.1 mol/L, 0.3 mol/L and 0.5 mol/L for different times of 15 s, 40 s and 60 s, respectively, finally modified by DTS (CH3(CH2)11Si(OCH3)3). The microstructure, chemical composition, wettability and anti-corrosion are characterized by means of SEM, XPS, water contact angle measurement and electrochemical method. The hydrophobic surfaces with microscale crater-like and nanoscale flower-like binary structure are obtained. The low-energy material is contained in surface after DTS treatment. The contact angles could reach up to 138.4 ± 2°, which hydrophobic property is both related to the micro-nano binary structure and chemical composition. The results of electrochemical measurements show that anti-corrosion property of magnesium alloy is improved. Furthermore, our research is expected to create some ideas from natural enlightenment to improve anti-corrosion property of magnesium alloy while this method can be easily extended to other metal materials.

  15. Etching of hexagonal SiC surfaces in chlorine-containing gas media at ambient pressure

    NASA Astrophysics Data System (ADS)

    Zinovev, A. V.; Moore, J. F.; Hryn, J.; Pellin, M. J.

    2006-06-01

    The modification of the silicon carbide (4H-SiC) single-crystal surface in a chlorine-containing gas mixture at high temperature (800-1000 °C) and ambient pressure was investigated. The results of silicon carbide chlorination are found to strongly depend on the hexagonal surface orientation. Due to the thermodynamically more favorable reaction of chlorine with silicon rather than carbon, the C-terminated side (0 0 0 1¯) clearly undergoes considerable changes, resulting in coverage by a black-colored carbon film, whereas the Si-side (0 0 0 1) surprisingly remains visually untouched. With using X-ray photoelectron spectroscopy (XPS), angle-resolved XPS and SEM it is shown that this drastic change in behavior is associated with a different structure of oxicarbide/silicate adlayer formed on the C- and Si-terminated sides of silicon carbide surface during experimental pre-treatment and air exposure. The presence of oxygen bridges connecting the silicate adlayer with the bulk SiC in the case of Si-side inhibits the chlorination reaction and makes this surface strongly resistant to chlorine attack. Only some places on the Si-terminated side demonstrate traces of chlorine etching in the form of hexagonal-shaped voids, which are possibly initiated by distortion of the initial crystalline structure by micropipes. In contrast, a thin carbon layer resulted on the C-terminated side as a consequence of the chlorination process. XPS, ARXPS, SEM and Raman spectroscopy study of created film allows us to argue that it consists mainly of sp2-bonded carbon, mostly in the form of nanoscale graphene sheets. The absence of a protective oxygen bridge between the silicate adlayer and the bulk silicon carbide crystal leads to unlimited growth of carbon film on the SiC(0 0 0 1¯) side.

  16. Three dimensional microscopic surface profiles of membranes reconstructed from freeze etching electrol micrographs.

    PubMed

    Krbecek, R; Gebhardt, C; Gruler, H; Sackmann, E

    1979-06-13

    A method of three-dimensional reconstruction of the surface profile of artificial and natural membranes from freeze quenched electron micrographs is presented. The method is based on the analysis of the variation in thickness of platinum layers, deposited under an oblique angle. In essence, it is reminiscent of the method of Eratosthenes to measure the earth's radius. The thickness of etch-like protrusions of membranes could be determined to an accuracy of about 3 A. True distances on curved surfaces rather than projections of distances are obtained. The method has been applied to both model membranes and biological membranes. The essential results are: 1. Detailed information on the symmetry and the molecular structure of the crystalline phases of dimyristoyl phosphatidylcholine was obtained. The microscopic surface profile of the ripple structure observed between the pretransition and the main transition was analysed. In accordance with a previous model we found that the ripple structure is caused by the spontaneous curvature of the monolayers. The surface profiles of the ripple structure and of the low temperature biaxial phase could be clearly distinguished. 2. The sizes and shapes of lipid domains formed by both thermically and charge-induced lateral phase separation were determined. This showed that the visual inspection of electron micrographs may lead to a considerable underestimation of the domain size. Conclusions may be drawn concerning the different phases formed upon lateral phase separation. 3. As a biological example, yeast cell membranes were studied. The method allows one to distinguish between different membrane-bound proteins by measuring the width-to-height ratio of the particles. The deformation of the lipid layer in the environment of the proteins may be determined. This deformation contains information about lipid-mediated long-range interactions between membrane proteins. PMID:378255

  17. Roughening of Polyimide Surface for Inkjet Printing by Plasma Etching Using the Polyimide Masked with Polystyrene Nanosphere Array.

    PubMed

    Mun, Mu Kyeom; Park, Jin Woo; Ahn, Jin Ho; Kim, Ki Kang; Yeom, Geun Young

    2015-10-01

    Two key conditions are required for the application of fine-line inkjet printing onto a flexible substrate such as polyimide (PI): linewidth control during the inkjetting process, and a strong adhesion of the polyimide surface to the ink after the ink solidifies. In this study, the properties of a polyimide surface that was roughened through etching in a He/SF6 plasma, using a polystyrene nanosphere array as the etch mask, were investigated. The near-atmospheric-pressure plasma system of the He/SF6 plasma that was used exhibits two notable properties in this context: similar to an atmospheric-pressure plasma system, it can easily handle inline substrate processing; and, similar to a vacuum system, it can control the process gas environment. Through the use of plasma etching, the polyimide surface masked the 120-nm-diameter polystyrene nanospheres, thereby forming a roughened nanoscale polyimide surface. This surface exhibited not only a greater hydrophobicity--with a contact angle of about 150° for water and about 30° for silver ink, indicating better silver linewidth control during the silver inkjetting process--but also a stronger adhesion to the silver ink sprayed onto it when compared with the flat polyimide surface. PMID:26726483

  18. Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors.

    PubMed

    Ma, Yingjie; Zhang, Yonggang; Gu, Yi; Chen, Xingyou; Shi, Yanhui; Ji, Wanyan; Xi, Suping; Du, Ben; Li, Xiaoliang; Tang, Hengjing; Li, Yongfu; Fang, Jiaxiong

    2016-04-01

    Effects of mesa etching and geometry on InGaAs/InAlAs avalanche photodiodes (APDs) were investigated by using both wet and inductively coupled plasma (ICP) etching with different mesa shapes as well as etchants. It was found that the mesa geometry had no evident impact on APDs' characteristics regardless of the etching techniques applied. Besides, ICP-etched APDs showed faster punch-through, suppressed premature surface breakdown and lower dark current behaviors compared to the wet-etched devices. Substantially suppressed surface leakage was also observed for ICP-etched devices, showing 1 and 3 orders of magnitude better at room temperature and 77 K respectively, and over 1 order of magnitude higher surface resistivity up to 4×107 Ω cm, in comparison to the wet-etched APDs. Introduction of extra hydrogen and Ar plasma in ICP etching led to detrimental effects to APDs' performance by enhancing the tunneling or recombination at surfaces. Those experimental results were clearly interpreted based on the surface state theories. PMID:27137065

  19. Amino acid conjugated self assembling molecules for enhancing surface wettability of fiber laser treated titanium surfaces

    NASA Astrophysics Data System (ADS)

    Akkan, Cagri K.; Hür, Deniz; Uzun, Lokman; Garipcan, Bora

    2016-03-01

    Surface wetting properties of implants are one of the most critical parameter, which determine the interaction of proteins and cells with the implant surface. In this regards, acid etching and sand blasting are the mostly used methods at surface modification of Titanium (Ti) for enhanced surface wettability. Besides, these kinds of modifications may cause a conflict whether the surface wettability is influenced by the process related surface contaminations or by the surface roughness. In contrast, lasers might be an option for the alteration of surface wetting properties via supporting micro and/or nano surface topographies while preventing surface chemical contaminations. In this work, we focused on two steps of surface processing approaches of Ti surface: physical and chemical modifications. Herein, we hierarchically structured Ti surfaces by using microsecond modulated pulsed fiber laser. Subsequently, laser structured and non-structured Ti surfaces were further modified with novel histidine and leucine Amino Acid conjugated Self-Assembled Molecules (His1-SAMs2 and Leu3-SAMs) to alter the surface wettability by introducing biologically hydrophilic and hydrophobic groups. Modification of Ti surfaces with His-SAMs and Leu-SAMs ended up with stable wetting properties when compared to non-modified surfaces after 7 days which may enhances the cell-surface interaction.

  20. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

    2015-11-01

    Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  1. Rapid, Nonmechanical, Damage-Free Figuring Of Optical Surfaces Using Plasma-Assisted Chemical Etching (PACE): Part I Experimental Results

    NASA Astrophysics Data System (ADS)

    Bollinger, L. D.; Zarowin, Charles B.

    1989-01-01

    We present experimental results of an ongoing investigation demonstrating that Plasma Assisted Chemical Etching (PACE) can rapidly and controllably figure and smooth optical surfaces without mechanical contact; thus, removing the constraints on the design of optical elements imposed by mechanical processes, and, allowing higher quality optical surfaces. This process employs a plasma etch process originally developed to pattern micro-electronic circuits by etching through a relatively non-erodable lithographically patterned mask. The PACE process shapes the optical surface by removing material in a small area under a confined reactive gas plasma moved over the surface. Rates of removal as high as 10 m per minute are obtainable with accurate control. The removal footprint can be varied during the process. PACE inherently smooths or polishes while removing material, exposing a virgin surface free of process generated contamination and subsurface damage. Although other materials can also be figured by a PACE process, for this study, apparatus and processes were developed to explore the figuring of fused silica. Results will be shown demonstrating: repeatability and control of removal rate and footprint; predictability of material removal with plasma "tool" motion; and smoothing.

  2. Surface trimming of silicon photonics devices using controlled reactive ion etching chemistry

    NASA Astrophysics Data System (ADS)

    Chandran, S.; Das, B. K.

    2015-06-01

    Surface trimming of rib waveguides fabricated in 5-μm SOI substrate has been carried out successfully without any significant increase of propagation losses. A reactive ion etching chemistry has been optimized for trimming and an empirical model has been developed to obtain the resulting waveguide geometries. This technique has been used to demonstrate smaller footprint devices like multimode interference based power splitters and ring resonators after defining them photolithographically with relatively large cross-section rib waveguides. We have been also successful to fabricate 2D tapered spot-size converter useful for monolithic integration of waveguides with varying heights and widths. The taper length is again precisely controlled by photolithographic definition. Minimum insertion loss of such a spot-size converter integrated between waveguides with 3-μm height difference has been recorded to be ∼2 dB. It has been also shown that the overall fiber-to-chip coupling loss can be reduced by >3 dB by using such spot-size converters at the input/output side of the waveguides.

  3. Surface Etching and DNA Damage Induced by Low-Energy Ion Irradiation in Yeast

    NASA Astrophysics Data System (ADS)

    Liu, Xuelan; Xu, An; Dai, Yin; Yuan, Hang; Yu, Zengliang

    2011-06-01

    Bio-effects of survival and etching damage on cell surface and DNA strand breaks were investigated in the yeast saccharomyces cerevisiae after exposure by nitrogen ion with an energy below 40 keV. The result showed that 16% of trehalose provided definite protection for cells against vacuum stress compared with glycerol. In contrast to vacuum control, significant morphological damage and DNA strand breaks were observed, in yeast cells bombarded with low-energy nitrogen, by scanning electron microscopy (SEM) and terminal deoxynucleotidyl transferase-mediated dUTP nick end labeling (TUNEL) immunofluorescence assays. Moreover, PI (propidium iodide) fluorescent staining indicated that cell integrity could be destroyed by ion irradiation. Cell damage eventually affected cell viability and free radicals were involved in cell damage as shown by DMSO (dimethyl sulfoxide) rescue experiment. Our primary experiments demonstrated that yeast cells can be used as an optional experimental model to study the biological effects of low energy ions and be applied to further investigate the mechanism(s) underlying the bio-effects of eukaryotic cells.

  4. Fabrication and selective surface modification of 3-dimensionally textured biomedical polymers from etched silicon substrates.

    PubMed

    Kapur, R; Spargo, B J; Chen, M S; Calvert, J M; Rudolph, A S

    1996-01-01

    A new method is described for producing biomedically relevant polymers with precisely defined micron scale surface texture in the x, y, and z planes. Patterned Si templates were fabricated using photolithography to create a relief pattern in photoresist with lateral dimensions as small as 1 micron. Electroless Ni was selectively deposited in the trenches of the patterned substrate. The Ni served as a resilient mask for transferring the patterns onto the Si substrate to depths of up to 8.5 microns by anisotropic reactive ion etching with a fluorine-based plasma. The 3-dimensional (3-D) textured silicon substrates were used as robust, reusable molds for pattern transfer onto poly (dimethyl siloxane), low density poly (ethylene), poly (L-lactide), and poly (glycolide) by either casting or injection molding. The fidelity of the pattern transfer from the silicon substrates to the polymers was 90 to 95% in all three planes for all polymers for more than 60 transfers from a single wafer, as determined by scanning electron microscopy and atomic force microscopy. Further, the 3-D textured polymers were selectively modified to coat proteins either in the trenches or on the mesas by capillary modification or selective coating techniques. These selectively patterned 3-D polymer substrates may be useful for a variety of biomaterial applications. PMID:8953387

  5. Bioactive glass surface for fiber reinforced composite implants via surface etching by Excimer laser.

    PubMed

    Kulkova, Julia; Moritz, Niko; Huhtinen, Hannu; Mattila, Riina; Donati, Ivan; Marsich, Eleonora; Paoletti, Sergio; Vallittu, Pekka K

    2016-07-01

    Biostable fiber-reinforced composites (FRC) prepared from bisphenol-A-glycidyldimethacrylate (BisGMA)-based thermosets reinforced with E-glass fibers are promising alternatives to metallic implants due to the excellent fatigue resistance and the mechanical properties matching those of bone. Bioactive glass (BG) granules can be incorporated within the polymer matrix to improve the osteointegration of the FRC implants. However, the creation of a viable surface layer using BG granules is technically challenging. In this study, we investigated the potential of Excimer laser ablation to achieve the selective removal of the matrix to expose the surface of BG granules. A UV-vis spectroscopic study was carried out to investigate the differences in the penetration of light in the thermoset matrix and BG. Thereafter, optimal Excimer laser ablation parameters were established. The formation of a calcium phosphate (CaP) layer on the surface of the laser-ablated specimens was verified in simulated body fluid (SBF). In addition, the proliferation of MG63 cells on the surfaces of the laser-ablated specimens was investigated. For the laser-ablated specimens, the pattern of proliferation of MG63 cells was comparable to that in the positive control group (Ti6Al4V). We concluded that Excimer laser ablation has potential for the creation of a bioactive surface on FRC-implants. PMID:27134152

  6. A method of removing oxides from the surface of Fe-Ni-Co alloy particles by chemical etching

    SciTech Connect

    Yelton, W.G.

    1989-04-01

    The addition of metal particles to bulk glass has been shown to increase fracture strength and toughness. Composites containing well-bonded particles exhibit the largest increases in these properties. This report discusses a study in which a method was developed to alter the surfaces of Fe--Ni--Co particles so that improved particle/glass matrix bonding resulted. In this method, as received Fe--Ni--Co particles were intentionally oxidized to create surface and grain boundary oxides. The surface and grain boundary oxides were then preferentially removed from the surfaces of iron-nickel-cobalt alloy particles by chemical etching. After removal of the surface oxides, coral-like structures remained on the surfaces of the metal particles and furnished good mechanical bonding sites to the glass matrix. The progression of this study involved completion of three designed experiments. In the first experiment, an etching process was identified by controlling etching solution temperature and hold time. Data from the first study were then incorporated into the design of a second experiment which examined solution temperature heating rate and hold time at 60/degree/C. Finally, the best conditions of the previous studies were selected to investigate the effects of the agitation rate of the etching solution on the particle yield. Combining the best conditions from each study yielded the most efficient method of removing oxides, in which a solution of 120 ml/l H/sub 3/PO/sub 4/ and 50 ml/l HCl was heated at 1/degree/C/min to 60/degree/C, held at 60/degree/C, and then moderately agitated for 30 min. 6 refs., 18 figs., 2 tabs.

  7. Regulation of Osteoblast Differentiation by Acid-Etched and/or Grit-Blasted Titanium Substrate Topography Is Enhanced by 1,25(OH)2D3 in a Sex-Dependent Manner.

    PubMed

    Olivares-Navarrete, Rene; Hyzy, Sharon L; Boyan, Barbara D; Schwartz, Zvi

    2015-01-01

    This study assessed contributions of micron-scale topography on clinically relevant titanium (Ti) to differentiation of osteoprogenitor cells and osteoblasts; the interaction of this effect with 1α,25-dihydroxyvitamin D3 (1α,25(OH)2D3); and if the effects are sex-dependent. Male and female rat bone marrow cells (BMCs) were cultured on acid-etched (A, R a = 0.87 μm), grit-blasted (GB, R a = 3.90 μm), or grit-blasted/acid-etched (SLA, R a = 3.22 μm) Ti. BMCs were sensitive to surface topography and underwent osteoblast differentiation. This was greatest on SLA; acid etching and grit blasting contributed additively. Primary osteoblasts were also sensitive to SLA, with less effect from individual structural components, demonstrated by enhanced local factor production. Sex-dependent responses of BMCs to topography varied with parameter whereas male and female osteoblasts responded similarly to surface treatment. 1α,25(OH)2D3 enhanced cell responses on all surfaces similarly. Effects were sex-dependent and male cells grown on a complex microstructured surface were much more sensitive than female cells. These results indicate that effects of the complex SLA topography are greater than acid etching or grit blasting alone on multipotent BMCs and committed osteoblasts and that individual parameters are sex-specific. The effect of 1α,25(OH)2D3 was sex dependent. The results also suggest that levels of 1α,25(OH)2D3 in the patient may be important in osseointegration. PMID:25945332

  8. Investigations on the SR method growth, etching, birefringence, laser damage threshold and dielectric characterization of sodium acid phthalate single crystals

    NASA Astrophysics Data System (ADS)

    Senthil, A.; Ramasamy, P.; Verma, Sunil

    2011-03-01

    Optically good quality semi-organic single crystal of sodium acid phthalate (NaAP) was successfully grown by Sankaranarayanan-Ramasamy (SR) method. Transparent, colourless <0 0 1> oriented unidirectional bulk single crystals of diameters 10 and 20 mm and length maximum up to 75 mm were grown by the SR method. The grown crystals were subjected to various characterization studies such as etching, birefringence, laser damage threshold, UV-vis spectrum and dielectric measurement. The value of birefringence and quality were ascertained by birefringence studies.

  9. Etch Effects on Surface loss in High Quality Aluminum on Silicon Superconducting Coplanar Resonators

    NASA Astrophysics Data System (ADS)

    Dunsworth, Andrew; Megrant, Anthony; Barends, Rami; Chen, Yu; Hoi, Iochun; Jeffrey, Evan; Mutus, Josh; Roushan, Pedram; Campbell, Brooks; Chen, Zijun; Chiaro, Ben; Kelly, Julian; Neill, Charles; O'Malley, Peter; Quintana, Chris; Sank, Daniel; Vainsencher, Amit; Wenner, Jim; White, Ted; Cleland, Andrew; Martinis, John; Martinis Group Team

    2014-03-01

    Superconducting coplanar resonators are a powerful tool for studying capacitive loss from two level states (TLS's) in superconducting qubits. We have found evidence that standard processing of aluminum on sapphire superconducting devices leaves behind ~2 nm organic residues which can contribute to loss at the Q >106 level that we are presently working with. Removing these residues is possible on a silicon substrate as it allows various sidewall etchings and profilings via chemical and physical etches. I will present recent Q factor measurements of aluminum on silicon resonators that were defined through a variety of etching conditions. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), through the Army Research Office grant JMAR-05.

  10. Investigation of the neutral-solution etch process for refractive SOE antireflective surfaces

    SciTech Connect

    Maish, A.B.

    1991-01-01

    Antireflection of optically clear glass used in photovoltaic concentrator refractive secondary optical elements (SOE's) was investigated using the neutral-solution etch process developed by Schott Glass. Test coupons and SOE's made from barium zinc glass, which does not solarize under ultraviolet exposure, were successfully etched at the center point process variable conditions of 87{degrees}C and 24 hours. Reflectance of the plano-plano dropped from 7.7% to 0.8%, with a corresponding increase in transmission from 91.7% to 98.5%. The etching process uses non-hydrofluoric, relatively non-toxic chemicals in a low-cost process well suited for use by photovoltaic system manufacturers during production. 10 refs., 4 figs., 1 tab.

  11. Investigation of surface damage precursor evolutions and laser-induced damage threshold improvement mechanism during Ion beam etching of fused silica.

    PubMed

    Shi, Feng; Zhong, Yaoyu; Dai, Yifan; Peng, Xiaoqiang; Xu, Mingjin; Sui, Tingting

    2016-09-01

    Surface damage precursor evolution has great influence on laser-induced damage threshold improvement of fused silica surface during Ion beam etching. In this work, a series of ion sputtering experiment are carried out to obtain the evolutions of damage precursors (dot-form microstructures, Polishing-Induced Contamination, Hertz scratches, and roughness). Based on ion sputtering theory, surface damage precursor evolutions are analyzed. The results show that the dot-form microstructures will appear during ion beam etching. But as the ion beam etching depth goes up, the dot-form microstructures can be mitigated. And ion-beam etching can broaden and passivate the Hertz scratches without increasing roughness value. A super-smooth surface (0.238nm RMS) can be obtained finally. The relative content of Fe and Ce impurities both significantly reduce after ion beam etching. The laser-induced damage threshold of fused silica is improved by 34% after ion beam etching for 800nm. Research results can be a reference on using ion beam etching process technology to improve laser-induced damage threshold of fused silica optics. PMID:27607688

  12. The Effect of Laser-Etched Surface Design on Soft Tissue Healing of Two Different Implant Abutment Systems: An Experimental Study in Dogs.

    PubMed

    Neiva, Rodrigo; Tovar, Nick; Jimbo, Ryo; Gil, Luiz F; Goldberg, Paula; Barbosa, Joao Pm; Lilin, Thomas; Coelho, Paulo G

    2016-01-01

    This study describes the early soft tissue morphology around two different implant systems that received either smooth or laser-etched abutments in a beagle dog model. Implants were placed in the healed mandibular molar region of eight beagle dogs and allowed to heal for 7 weeks. When the most apical aspect of the junctional epithelium (JE) was above or within the upper half of the laser-etched region, fibers were oriented perpendicular to the abutment surface. In contrast, JE positioned within the lower half of the laser-etched region or within or below the implant-abutment gap level presented fibers oriented parallel to the abutment surface. PMID:27560671

  13. Effect of Cl{sub 2}- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    SciTech Connect

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-05-15

    A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.

  14. Plasma chemical modification of track-etched membrane surface layer for improvement of their biomedical properties

    NASA Astrophysics Data System (ADS)

    Kravets, Liubov I.; Ryazantseva, Tatyana V.

    2013-12-01

    The morphological and clinical studies of poly(ethylene terephthalate) track-etched membrane modified by plasma of non-polymerizing gases as drainage materials for antiglaucomatous operations were performed. It was demonstrated their compatibility with eye tissues. Moreover, it was shown that a new drainage has a good lasting hypotensive effect and can be used as operation for refractory glaucoma surgery.

  15. Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

    DOEpatents

    Weber, Michael F.

    1991-10-08

    A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

  16. Characterization of deep wet etching of glass

    NASA Astrophysics Data System (ADS)

    Iliescu, Ciprian; Chen, Bangtao; Tay, Francis E. H.; Xu, Guolin; Miao, Jianmin

    2006-01-01

    This paper presents a characterization of wet etching of glass in HF-based solutions with a focus on etching rate, masking layers and quality of the generated surface. The first important factor that affects the deep wet etching process is the glass composition. The presence of oxides such as CaO, MgO or Al IIO 3 that give insoluble products after reaction with HF can generate rough surface and modify the etching rate. A second factor that influences especially the etch rate is the annealing process (560°C / 6 hours in N II environment). For annealed glass samples an increase of the etch rate with 50-60% was achieved. Another important factor is the concentration of the HF solution. For deep wet etching of Pyrex glass in hydrofluoric acid solution, different masking layers such as Cr/Au, PECVD amorphous silicon, LPCVD polysilicon and silicon carbide are analyzed. Detailed studies show that the stress in the masking layer is a critical factor for deep wet etching of glass. A low value of compressive stress is recommended. High value of tensile stress in the masking layer (200-300 MPa) can be an important factor in the generation of the pinholes. Another factor is the surface hydrophilicity. A hydrophobic surface of the masking layer will prevent the etching solution from flowing through the deposition defects (micro/nano channels or cracks) and the generation of pinholes is reduced. The stress gradient in the masking layer can also be an important factor in generation of the notching defects on the edges. Using these considerations a special multilayer masks Cr/Au/Photoresist (AZ7220) and amorphous silicon/silicon carbide/Photoresist were fabricated for deep wet etching of a 500 μm and 1mm-thick respectively Pyrex glass wafers. In both cases the etching was performed through wafer. From our knowledge these are the best results reported in the literature. The quality of the generated surface is another important factor in the fabrication process. We notice that the

  17. A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

    NASA Astrophysics Data System (ADS)

    Wu, Mingching; Fang, Weileun

    2006-02-01

    This work attempts to integrate poly-Si thin film and single-crystal-silicon (SCS) structures in a monolithic process. The process integrated multi-depth DRIE (deep reactive ion etching), trench-refilled molding, a two poly-Si MUMPs process and (1 1 1) Si bulk micromachining to accomplish multi-thickness and multi-depth structures for superior micro-optical devices. In application, a SCS scanning mirror driven by self-aligned vertical comb-drive actuators was demonstrated. The stiffness of the mirror was significantly increased by thick SCS structures. The thin poly-Si film served as flexible torsional springs and electrical routings. The depth difference of the vertical comb electrodes was tuned by DRIE to increase the devices' stroke. Finally, a large moving space was available after the bulk Si etching. In summary, the present fabrication process, named (1 1 1) MOSBE (molded surface-micromachining and bulk etching release on (1 1 1) Si substrate), can further integrate with the MUMPs devices to establish a more powerful platform.

  18. Modification of surface energy, dry etching, and organic film removal using atmospheric-pressure pulsed-corona plasma

    SciTech Connect

    Yamamoto, Toshiaki; Newsome, J.R.; Ensor, D.S.

    1995-05-01

    A laboratory-scale atmospheric-pressure plasma reactor, using a nanosecond pulsed corona, was constructed to demonstrate potential applications ranging from modification of surface energy to removal of surface organic films. For surface modification studies, three different substrates were selected to evaluate the surface energies: bare aluminum, polyurethane, and silicon coated with photoresist. The critical surface energy for all materials studied significantly increased after the plasma treatment. The effects of gas composition and plasma treatment time were also investigated. Photoresist, ethylene glycol, and Micro surfactant were used as test organic films. The etching rate of a photoresist coating on silicon was 9 nm/min. Organic film removal using atmospheric pressure plasma technology was shown to be feasible.

  19. Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lee, H. C.; Park, J. B.; Bae, J. W.; Thuy, Pham Thi Thu; Yoo, M. C.; Yeom, G. Y.

    2008-08-01

    On the surfaces of GaN-based light-emitting diodes (LEDs) having an n-side-up vertical electrode structure formed by the laser lift-off, various shapes of photoresist-patterned surface textures were formed by inductively coupled plasma etching and their effect on the light emission efficiencies was investigated. By the formation of various shapes of surface textures, the light output efficiency was increased from 37% to 45% compared to that without surface textures. The increase of light output efficiency was related to the increase of sidewall scattering, the decrease of reflected loss, and the decrease of cavity wall effect that occurs for the vertical LEDs by the increase of sidewall surface area.

  20. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    NASA Astrophysics Data System (ADS)

    Leonard, J. T.; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Lee, S.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2016-01-01

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ˜22 kA/cm2 (25 mA), with a peak output power of ˜180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP12,1), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  1. Surface Acidity by Positronium Spectroscopy

    NASA Astrophysics Data System (ADS)

    Huang, Weifeng; Huang, Dinah C.

    2001-03-01

    The application of the technique of angular correlation of the annihilation radiation (ACAR) from positron-electron pairs for investigating Bronsted acid sites in zeolytic catalysts was initially introduced by the authors with remarkable success. As incident positrons enter polycrystalline zeolites, a portion of the incident positrons would diffuse through the bulk and emerge on the internal surfaces and form with electrons there hydrogen-like positronium atoms (Ps). The Ps atoms will eventually annihilate also and generate an ACAR spectrum that is distinctively narrower than the one from the bulk. In the presence of Bronsted acid sites, the Ps atom population would be reduced through oxidation by protons, resulting in alteration of the ACAR spectrum which is gauged by using a lineshape parameter S. In this report, results from ACAR measurements for based-adsorbed NaHY zeolites will be presented and discussed in light of acidic stregth and effect of molecular size. Acknowledgement: This project was partially supported by grants from NSF and Taiwan National Science Council.

  2. Multiple-mask chemical etching

    NASA Technical Reports Server (NTRS)

    Cannon, D. L.

    1969-01-01

    Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

  3. Etching of enamel for direct bonding with a thulium fiber laser

    NASA Astrophysics Data System (ADS)

    Kabaş Sarp, Ayşe S.; Gülsoy, Murat

    2011-03-01

    Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

  4. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    PubMed

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption. PMID:26688008

  5. Mesoporous Iron Oxide Nanoparticles Prepared by Polyacrylic Acid Etching and Their Application in Gene Delivery to Mesenchymal Stem Cells

    PubMed Central

    CAO, BINRUI; QIU, PENGHE; MAO, CHUANBIN

    2013-01-01

    Novel monodisperse mesoporous iron oxide nanoparticles (m-IONPs) were synthesized by a postsynthesis etching approach and characterized by electron microscopy. In this approach, solid iron oxide nanoparticles (s-IONPs) were first prepared following a solvothermal method, and then etched anisotropically by polyacrylic acid to form the mesoporous nanostructures. MTT cytotoxicity assay demonstrated that the m-IONPs have good biocompatibility with mesenchymal stem cells (MSCs). Owing to their mesoporous structure and good biocompatibility, these monodisperse m-IONPs were used as a nonviral vector for the delivery of a gene of vascular endothelial growth factor (VEGF) tagged with a green fluorescence protein (GFP) into the hard-to-transfect stem cells. Successful gene delivery and transfection were verified by detecting the GFP fluorescence from MSCs using fluorescence microscopy. Our results illustrated that the m-IONPs synthesized in this work can serve as a potential nonviral carrier in gene therapy where stem cells should be first transfected and then implanted into disease sites for disease treatment. PMID:23913581

  6. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  7. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    SciTech Connect

    Leon, R.P.; Bailey, S.G.; Mazaris, G.A.; Williams, W.D.

    1986-10-13

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1-bar1-bar1)Ga planes with 6 ..mu..m periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  8. Formation of surface morphology of silicon solar cells by means of two-step photo-electrochemical etching and their characterization

    NASA Astrophysics Data System (ADS)

    Shatkovskis, E.; Zagadskij, V.; Jukna, A.; Boris, R.; Antonovic, V.; Stupakova, J.; Mitkevicius, R.; Baradinskaite, A.; Keriene, J.

    2014-10-01

    The electrochemical etching of porous silicon offers many diverse opportunities for production of complex porous silicon structures located not only on the surface but also in a bulk of the silicon devices. A specific technological regime, the photo-electrochemical etching can affect bulk of the silicon device but at the same time saving its textured surface almost unchanged. Our group is the first who investigated the silicon solar cells with textured surface modified by means of photo-electrochemical etching. Etched devices demonstrated better photoelectrical characteristics if compare ones with unmodified solar cells. Our current work presents results on research of solar cells photoelectrochemically treated in HF: ethanol solution. Applied etching regime allowed us to modify the emitter's volume at the same time affecting only minimally the surface of the solar cell itself. SEM micrographs show the elevations, ripples, bumps, cracks etc. on the surface of photo-electrochemically treated solar cells. The optical ellipsometer spectra, optical microscope measurements results, SEM micrographs of surface morphology as well as light reflectivity of the photoelectrochemically treated and untreated surfaces of the solar cells investigated and discussed in this work.

  9. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives

    PubMed Central

    Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2015-01-01

    Objectives This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Materials and Methods Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. Results In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p < 0.05). In BB, AE and SU (pH 2.4 - 2.7), additional etching did not affect the bond strength (p > 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p < 0.05). When adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. Conclusions The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin. PMID:25671215

  10. Long-wavelength vertical-cavity surface-emitting lasers with selectively etched thin apertures

    NASA Astrophysics Data System (ADS)

    Feezell, Daniel F.

    Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1300--1600nm wavelength window are attractive light sources for short to mid-range optical fiber communications. These devices target low-loss and low-dispersion minima in standard optical fibers and are expected to provide a low-cost alternative to the existing edge-emitting infrastructure. With low-power consumption, on wafer testing; simple packaging, and high fiber-coupling efficiency, VCSELs are ideal transmitters for CWDM, metro, local area, and storage area networks. Recently, much attention has been devoted to a rich variety of approaches to long-wavelength VCSELs. One underlying problem, however, has been the need to match a reliable high-gain active region with high-index-contrast distributed Bragg reflectors (DBRs) over the full 1300--1600nm wavelength range. One solution to this problem is to utilize well-established InAlGaAs active-region technology coupled with AlGaAsSb DBRs. This combination facilitates monolithic all-epitaxial InP-based devices spanning the entire 1300--1600nm wavelength range. Previously, Dr. Shigeru Nakagawa and Dr. Eric Hall have demonstrated long-wavelength VCSELs with Sb-based technology operating at 1550nm. This dissertation demonstrates the first high-performance InP-based VCSELs with Sb-based DBRs operating at 1310nm, thus solidifying Sb-based technology as a wavelength flexible platform for long-wavelength devices. Also developed is a novel and efficient tunnel-junction aperturing technology for generating extremely low-loss optical and electrical confinement. Lastly, it is shown that the benefits from such an aperturing scheme produce marked improvements in device operation versus previously demonstrated Sb-based VCSELs. The devices from this research generated over 1.6mW single-mode continuous-wave (CW) output power at room temperature (>2mW multi-mode), displayed threshold currents down to 1mA, and operated CW up to 90°C. Furthermore, world

  11. Microtensile bond strength of a resin-based fissure sealant to Er,Cr:YSGG laser-etched primary enamel.

    PubMed

    Sungurtekin-Ekci, Elif; Oztas, Nurhan

    2016-05-01

    The aim of this study was to evaluate the effect of Er,Cr:YSGG laser pre-treatment alone, or associated with acid-etching, on the microtensile bond strength of a resin-based fissure sealant to primary enamel. Twenty-five human primary molars were randomly divided into five groups including (1) 35 % acid etching, (2) 2.5-W laser etching, (3) 3.5-W laser etching, (4) 2.5-W laser etching + acid etching, and (5) 3.5-W laser etching + acid etching. Er,Cr:YSGG laser was used at a wavelength of 2.780 nm and pulse duration of 140-200 μs with a repetition rate of 20 Hz. Following surface pre-treatment, the fissure sealant (ClinPro™, 3M Dental Products) was applied. Each tooth was sectioned and subjected to microtensile testing. Kruskal-Wallis test was used for statistical analysis. The level of significance was set at p < 0.05. The microtensile bond strength values of group 1 were significantly higher than those of group 2, while no statistically significant difference was detected between groups 1, 3, 4, and 5. It was concluded that 3.5-W laser etching produced results comparable to conventional acid etching technique, whereas 2.5-W laser etching was not able to yield adequate bonding performance. PMID:25847685

  12. Topography-based surface tension gradients to facilitate water droplet movement on laser-etched copper substrates.

    PubMed

    Sommers, A D; Brest, T J; Eid, K F

    2013-09-24

    This paper describes a method for creating a topography-based gradient on a metallic surface to help mitigate problems associated with condensate retention. The gradient was designed to promote water droplet migration toward a specified region on the surface which would serve as the primary conduit for drainage using only the roughness of the surface to facilitate the movement of the droplets. In this work, parallel microchannels having a fixed land width but variable spacing were etched into copper substrates to create a surface tension gradient along the surface of the copper. The surfaces were fabricated using a 355 nm Nd:YVO4 laser system and then characterized using spray testing techniques and water droplet (2-10 μL) injection via microsyringe. The distances that individual droplets traveled on the gradient surface were also measured using a goniometer and CCD camera and were found to be between 0.5 and 1.5 mm for surfaces in a horizontal orientation. Droplet movement was spontaneous and did not require the use of chemical coatings. The theoretical design and construction of surface tension gradients were also explored in this work by calculating the minimum gradient needed for droplet movement on a horizontal surface using Wenzel's model of wetting. The results of this study suggest that microstructural patterning could be used to help reduce condensate retention on metallic fins such as those used in heat exchangers in heating, ventilation, air-conditioning, and refrigeration (HVAC&R) applications. PMID:23971937

  13. Atomic force microscopic study of directional SrSO 4(001) surface and its etching property

    NASA Astrophysics Data System (ADS)

    Seo, Akihiro; Shindo, Hitoshi

    1994-12-01

    Different step structures were observed with atomic force microscopy (AFM) on SrSO 4(001) cleaved in air in two ways. Monolayer steps were observed when the crystal was cleaved by wedging open a crack. On the other hand, bilayer steps were observed when it was cleaved by giving a blow on a knife edge placed along the a-axis on a crystal face. In the latter case, the cleavage proceeded under slightly misoriented tensile stress, favoring formation of bilayer cleavage steps due to alternating directions of the bonds connecting (001) ionic layers. Directionality in the arrangement of the ions at the (001) surface was reflected on the shape of etch pits formed by dissolving the surface in electrolyte solutions. Relative stabilities of the steps surrounding the bow-shaped pits are discussed. The directionality of the surface has potential application in constructing two-dimensional assemblies of functional molecules.

  14. Influence of acid-etched splinting methods on discoloration of dental enamel in four media: an in vitro study.

    PubMed

    Oikarinen, K S; Nieminen, T M

    1994-12-01

    The aim of this in vitro study was to assess the staining of enamel in relation to fixation of luxated teeth. Color changes induced by chlorhexidine, red wine, tea, and coffee were detected with a Minolta Chroma Meter (CR-121) after extracted teeth were treated to simulate construction of dental splinting. L*a*b* color readings were made before and after 7 days of incubation in the above-mentioned media in teeth treated 1) by acid-etching, 2) by acid-etching followed by resin, 3) by resin and composite, 4) by Triad Gel, and 5) by Protemp. L* is an indicator of black (0) and white (100). The a* values relate to the red (+100)-green (-100) color axes, and the b* values to the yellow (+100) and blue (-100) axes. Untreated teeth served as controls. One-way analysis of variance of mean L* values revealed no statistically significant differences in treatment. Discoloration was observed in all teeth, including the control ones. However, Protemp yielded the largest changes in mean L* values. Analysis of variance of mean L* values revealed statistically significant differences between incubation liquids because no increase in staining of enamel was noted after 7 days' incubation in chlorhexidine. Red wine increased the mean L* values more than coffee or tea. Changes in a*b* readings were toward red (+a*) after incubation in red wine, except in the case of teeth treated with resin. The color of all such teeth changed more toward yellow (+b*), because the resin used was yellow.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:7871352

  15. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    NASA Astrophysics Data System (ADS)

    Chan, Silvia H.; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; DenBaars, Steven P.; Mishra, Umesh K.

    2016-06-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N2 + NH3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm2 V‑1 s‑1 (R sh = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al2O3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas.

  16. The Influence of Low-Level Laser on Osseointegration Around Machined and Sandblasted Acid-Etched Implants: A Removal Torque and Histomorphometric Analyses.

    PubMed

    Teixeira, Eduardo Rolim; Torres, Marco Antônio Rambo Osório; Meyer, Kleber Ricardo Monteiro; Zani, Sabrina Rebollo; Shinkai, Rosemary Sadami Arai; Grossi, Márcio Lima

    2015-08-01

    Evaluation of the influence of laser application on osseointegration around implants with different surface characteristics is limited. This study aims to evaluate the influence of low-level lasers on the early stages of osseointegration. Ninety-six external hex implants (3.75 mm × 5.0 mm) were placed in 24 rabbits-one machined and one sandblasted acid-etched per tibia. The rabbits were later divided into the laser group, which received a total dose of 24 J/cm(2) of gallium-aluminum-arsenide laser over 15 days, and a control group. At 16 and 30 days after surgery, removal torque and histomorphometric analyses were performed. No statistical differences in removal torque or histomorphometric analyses were verified between laser and control groups regardless of implant surface (P > .05). Time was the only variable presenting significant differences between measurements (P < .05). Low-level laser had no significant short-term effect on bone-to-implant contact and removal torque values regardless of implant surface characteristics. PMID:23834724

  17. AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

    NASA Astrophysics Data System (ADS)

    Shimizu, Tomohiro; Yamaguchi, Takuya; Inoue, Fumihiro; Inada, Mitsuru; Shingubara, Shoso

    2012-11-01

    The morphological changes of a nanostructured Si surface prepared by metal assisted etching were investigated. We used a mixture of silver nitrate (AgNO3) and hydrofluoric acid (HF) as an electroless plating bath of Ag, as well as an etching solution of Si. With a change in silver ion concentration in the etching solution, three types of etched Si nanostructures were observed: “nanowire”, “porous wall”, and “polished”. We developed a phase diagram of the morphology of the etched Si surface. With increasing concentration of AgNO3 in the etching solution, the surface morphology of etched Si changes from nanowire to porous wall, and finally, polished for regardless of Si resistivity.

  18. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    SciTech Connect

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  19. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOEpatents

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  20. Site-specific Pt Deposition and Etching on Electrically and Thermally Isolated SiO2 Micro-disk Surfaces

    SciTech Connect

    Saraf, Laxmikant V.

    2010-03-22

    Electrically and thermally isolated surfaces are often crucial for improving the detection sensitivity of microelectronic sensors. The site specific in-situ growth of Pt nano-rods on thermally and electrically isolated micro-fabricated SiO2 disks using wet chemical etching and focused ion/electron dual-beam (FIB-SEM) is demonstrated in this work. Fabrication of an array of micro-cavities on top of micro-disk is also demonstrated. FIB source is also utilized to fabricate through-holes in the micro-disks. The nature of Ga Gaussian distribution in the Ga-implanted region using a FIB source can naturally create more conducting layer on the sidewalls of through-holes on the micro-disks. Some sensor design concepts based on micro-fabrication of SiO2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

  1. Optimization of silver-assisted nano-pillar etching process in silicon

    NASA Astrophysics Data System (ADS)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  2. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.

    PubMed

    Liu, Li-Hong; Michalak, David J; Chopra, Tatiana P; Pujari, Sidharam P; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D; Zuilhof, Han; Chabal, Yves J

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface). PMID:26870908

  3. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

    NASA Astrophysics Data System (ADS)

    Liu, Li-Hong; Michalak, David J.; Chopra, Tatiana P.; Pujari, Sidharam P.; Cabrera, Wilfredo; Dick, Don; Veyan, Jean-François; Hourani, Rami; Halls, Mathew D.; Zuilhof, Han; Chabal, Yves J.

    2016-03-01

    The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

  4. Efficient design of experiments for complex response surfaces with application to etching uniformity in a plasma reactor

    NASA Astrophysics Data System (ADS)

    Tatavalli Mittadar, Nirmal

    Plasma etching uniformity across silicon wafers is of paramount importance in the semiconductor industry. The complexity of plasma etching, coupled with lack of instrumentation to provide real-time process information (that could be used for feedback control), necessitate that optimal conditions for uniform etching must be designed into the reactor and process recipe. This is often done empirically using standard design of experiments which, however, are very costly and time consuming. The objective of this study was to develop a general purpose efficient design strategy that requires a minimum number of experiments, and can handle complex constraints in the presence of uncertainties. Traditionally, Response Surface Methodology (RSM) is used in these applications to design experiments to determine the optimal value of decision variables or inputs. We demonstrated that standard RSM, when applied to the problem of plasma etching uniformity, has the following drawbacks (1) inefficient search due to process nonlinearities, (2) lack of converge to the optimum, and, (3) inability to handle complex inequality constraints. We developed a four-phase Efficient Design Strategy (EDS) based on the DACE paradigm (Design and Analysis of Computer Experiments) and Bayesian search algorithms. The four phases of EDS are: (1) exploration of the design space by maximizing information, (2) exploration of the design space for feasible points by maximizing probability of constraint satisfaction, (3) optimization of the objective and (4) constrained local search. We also designed novel algorithms to switch between the different phases. The choice of model parameters for DACE predictors is usually determined by the Maximum Likelihood Estimation (MLE) method. Depending on the dataset, MLE could result in unrealistic predictors that show a peak-and-dip behavior. To solve this problem we developed techniques to detect the presence of peak-and-dip behavior and a new scheme based on Maximum a

  5. Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation

    NASA Astrophysics Data System (ADS)

    Fukasawa, Masanaga; Miyawaki, Yudai; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Matsugai, Hiroyasu; Honda, Takayoshi; Minami, Masaki; Uesawa, Fumikatsu; Hori, Masaru; Tatsumi, Tetsuya

    2012-02-01

    Photon-enhanced etching of SiNx:H films caused by the interaction between vacuum ultraviolet (VUV)/ultraviolet (UV) radiation and radicals in the fluorocarbon plasma was investigated by a technique with a novel sample setup of the pallet for plasma evaluation. The simultaneous injection of UV radiation and radicals causes a dramatic etch rate enhancement of SiNx:H films. Only UV radiation causes the film shrinkage of SiNx:H films owing to hydrogen desorption from the film. Capacitance-voltage characteristics of SiNx:H/Si substrates were studied before and after UV radiation. The interface trap density increased monotonically upon irradiating the UV photons with a wavelength of 248 nm. The estimated effective interface trap generation probability is 4.74 ×10-7 eV-1·photon-1. Therefore, the monitoring of the VUV/UV spectra during plasma processing and the understanding of its impact on the surface reaction, film damage and electrical performance of underlying devices are indispensable to fabricate advanced devices.

  6. In vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste.

    PubMed

    Praxedes-Neto, Otávio José; Borges, Boniek Castillo Dutra; Florêncio-Filho, Cícero; Farias, Arthur Costa Rodrigues; Drennan, John; De Lima, Kenio Costa

    2012-07-01

    This study aimed to evaluate the in vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste. One hundred and twenty teeth from 30 volunteers were selected. The teeth were assigned to four treatments: no treatment (negative control); 37% phosphoric acid-etching (PAE) (positive control); PAE + resin-modified glass ionomer cement (RMGIC); and, PAE + composite resin. Patients brushed teeth with fluoridated (n = 15) or non-fluoridated (n = 15) toothpastes, so that etched enamel was protected with screens and it was not in contact with the brush bristles. Remineralization was evaluated by means of laser fluorescence (LF), environmental scanning electronic microscopy, and energy dispersive spectrometry after extraction. The LF means were compared by means of Wilcoxon and Mann Whitney tests. Environmental scanning electron microscopy scores were compared among the groups using a Kruskal Wallis test, whereas the Ca/P ratio was evaluated by means of an Analysis of Variance with subparcels (treatments) and Tukey's post-hoc test. There were no statistically significant differences between the tooth pastes and between the orthodontic adhesives evaluated. Most teeth presented only partial enamel remineralization. Therefore, the fluoride released by the RMGIC was not enough to cause increased crystal regrowth in the acid-etched enamel. The use of fluoridated toothpaste did not provide positive additional effect. PMID:22298375

  7. ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment

    NASA Astrophysics Data System (ADS)

    Shah, Amit P.; Azizur Rahman, A.; Bhattacharya, Arnab

    2015-01-01

    We report a comprehensive investigation of inductively-coupled plasma reactive ion etching (ICP-RIE) of polar (0001) c-plane, semi-polar (11-22) and non-polar (11-20) a-plane AlN epilayers and show that under optimized conditions a combination of BCl3-based surface oxide removal pretreatment and Cl2/Ar ICP etching allows fast etch rates (750 nm min-1) with a smooth surface morphology. We compare samples of different orientation etched in Cl2/Ar and Cl2/BCl3/Ar plasmas, with and without BCl3/Ar ICP pretreatment, and show that the effective removal of surface oxide is a crucial step for reliable ICP-RIE etching of AlN layers. For such pretreated samples, optimization of etch parameters such as RF power, ICP power, and chamber pressure then permit very high etch rates to be obtained with a smooth surface morphology. We also study the effect of varying the BCl3 fraction in BCl3/Cl2/Ar plasmas on the etch rate and surface morphology and find that increasing the BCl3 fraction reduces the etch rate for AlN. However, above 20% BCl3 content, samples with and without pre-treatment show similar etch rates.

  8. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity

    NASA Astrophysics Data System (ADS)

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-01

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 μg ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical

  9. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  10. Bond strengths of a self-etching adhesive to dentin surfaces treated with saliva, blood, and different hemostatic agents.

    PubMed

    Unlu, Nimet; Cebe, Fatma; Cebe, Mehmet Ata; Cetin, Ali Riza; Cobanoglu, Nevin

    2015-01-01

    The aim of this study was to evaluate the microtensile bond strengths of a self-etching adhesive to dentin surfaces after treatment with 4 different hemostatic agents in the presence of saliva and blood. After testing, no significant differences were found between the mean bond strength of Clearfil SE (CSE) Bond resin adhesive to normal dentin and those of CSE to dentin treated with the hemostatic agents ViscoStat Clear, Astringedent, or Astringedent X (P > 0.05). However, the mean bond strength of CSE Bond to dentin treated with Ankaferd Blood Stopper (ABS) was significantly greater than those of the other groups (P < 0.05). Thus, while 3 of the tested hemostatic agents did not have significant effects on the bond strength of composite resin to dentin, ABS increased the bond strength of CSE Bond to dentin. PMID:26147164

  11. High aspect ratio silicon etch: A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma

    2010-09-01

    High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

  12. Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization

    NASA Astrophysics Data System (ADS)

    Klein, B.; Artyushkova, K.; Plis, E.; Jamus, A.; Maji, S.; Casias, L.; Kutty, M. N.; Krishna, S.

    2015-05-01

    XPS characterization was used to determine the surface chemistry of a mid-wave infrared T2SL treated by both an HCl-based and an H3PO4-based etching solution. This analysis, performed over both the etched and unetched portions of the sample, revealed that the HCl-based etch removed Ga and Sb oxides while the H3PO4-based etch removed In and As oxides. XPS imaging was also done on 200 μm × 200 μm areas of the sample, and showed that HCl solution (Ga, and O) produced surfaces that were less stoichiometric than the H3PO4 solution (Ga2O3, Sb2O5, Sb in GaSb). Single-pixel, p-i-n test structures were fabricated using either etching solution, and an electrical comparison revealed over an order of magnitude improvement in dark current for the sample treated with the H3PO4 solution, compared to the HCl sample.

  13. Thin-film solar cells with InGaAs/GaAsP multiple quantum wells and a rear surface etched with light trapping micro-hole array

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaroh; Inoue, Tomoyuki; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki

    2015-08-01

    A light trapping effect in GaAs p-i-n solar cells with InGaAs/GaAsP multiple quantum wells (MQWs) in the i-layer was demonstrated by applying a light scattering texture to the rear surface of the cell. A thin-film MQW solar cell was successfully fabricated by metal organic vapor phase epitaxy (MOVPE) to grow an inverted n-i-p photovoltaic (PV) structure; this structure was then transferred to a Si support substrate to prevent optical loss due to free carrier absorption. For the light scattering texture, the use of both the wet-etched micro-hole arrayed SiO2 dielectric layer on the rear surface of the cell and the secondarily etched micro hole array on the GaAs layer was attempted. On the SiO2 layer, the micro hole array pattern was obtained by the radio frequency sputtering of the layer followed by wet etching with photolithographic patterning. On the GaAs layer, the micro-hole array pattern was obtained by direct etching through a SiO2 template. Compared with the light scattering effects of the micro-hole-arrayed SiO2 layer, the secondarily etched GaAs rear contact layer showed a significant improvement in external quantum efficiency (EQE) in the wavelength range from 855 to 1000 nm that corresponds to the photon absorption wavelength in MQWs.

  14. 1/f noise in etched groove surface acoustic wave (SAW) resonators.

    PubMed

    Parker, T E; Andres, D; Greer, J A; Montress, G K

    1994-01-01

    Measurements of 1/f (or flicker) frequency fluctuations in SAW resonators fabricated with etched groove reflectors on single crystal quartz have shown that the observed noise levels vary inversely with device size. These measurements were made on sixteen 450 MHz resonators of four different sizes. The 1/f noise levels were also evaluated on twenty-eight other SAW resonators ranging in frequency from 401 to 915 MHz. This additional data provides valuable information on the dependence of the flicker noise levels on resonator frequency. A model based an localized, independent velocity fluctuations in the quartz is proposed which correctly fits the observed size and frequency dependence of the measured 1/f noise levels. This model suggests that the velocity fluctuations originate in small regions (much less than ~5 mum in diameter) randomly distributed throughout the quartz with an average separation of about 5 mum between independent (incoherent) sources. The magnitude of the localized fractional velocity fluctuations, Deltav/v, averaged over a 5 micron cube is on the order of 1x10 (-9). PMID:18263275

  15. Dependence of electric potentials at trench surfaces on ion angular distribution in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Palov, A. P.; Mankelevich, Yu A.; Rakhimova, T. V.; Baklanov, M. R.

    2016-03-01

    Ion-stimulated etching of dielectrics in radio frequency plasma results in positive charging of a trench bottom because of the significant difference in the angular distribution functions of ions and electrons. They are anisotropic for ions and quasi-isotropic for electrons. The charging leads to a decrease in the energy of the ions bombarding the trench bottom and to undesirable sputtering of the walls near the trench bottom because of the curving of the ion trajectories. This process is normally investigated by Monte Carlo methods in the absence of experimental data. In this paper the analytical dependence of the ion flux bombarding the trench bottom on a trench aspect ratio and ion angular distribution function is obtained. Numerical calculations of the electric potential on the trench bottom for a set of trench aspect ratios and angles of the ion angular distribution function were performed based on a Monte Carlo method to demonstrate the ion flux and electric potential correlated well with each other. The proposed formula for an ion flux is suggested to be helpful for analyzing charging the trenches with different aspect ratios in plasma with an arbitrary angular ion distribution function.

  16. Pore size distributions in microporous membranes. 1: Surface study of track-etched filters by image analysis

    SciTech Connect

    Calvo, J.I.; Hernandez, A.; Caruana, G.; Martinez, L.

    1995-10-01

    The surface morphology of several Cyclopore filters, consisting of thin track-etched sheets of polycarbonate, is analyzed here. Scanning electron microscopy and computerized image analysis have been applied. The surface porosity and the pore density or number of pores per surface unit are directly obtained for each filter, while the statistical distribution of the pore areas, pore perimeters, equivalent pore diameters, and pore shape factors are studied as well. These pore size distributions have been studied for six types of filters (C01, C02, C04, C06, C08, and C10) and the existence of a relevant portion of double and other multiple pores has been revealed. The fraction of these multiple pores are correlated with the nominal pore radii. The results on pore size have been used to predict the volume flows of the membranes studied. This can be done only by assuming that the surface characteristics remain unchanged in the internal volume of the filters, which leads to hydrodynamic radii well in accordance with the experimental ones, within the error range. Nevertheless, it seems that some of the pores should have internal widenings with inner radii close to 120% of the external ones.

  17. Comparative evaluation of the enamel bond strength of ‘etch-and-rinse’ and ‘all-in-one’ bonding agents on cut and uncut enamel surfaces

    PubMed Central

    Patil, Deepu; Singbal, Kiran Prabhakar; Kamat, Sharad

    2011-01-01

    Aims and Objectives: To compare tensile bond strength of an ‘etch-and-rinse’ bonding agent (Single bond,3M ESPE, MN, USA) with an ‘all-in-one’ bonding agent (iBond, Heraeus Kulzer, NY, USA) on cut and uncut enamel surfaces. The null hypothesis tested is that the ‘all-in-one’ bonding agent matches the ‘etch-and-rinse’ bonding agent in terms of tensile bond strength to enamel. Materials and Methods: Forty extracted human mandibular teeth were used for the study. Twenty teeth with intact enamel surfaces were divided into two groups of 10 teeth each. The enamel surfaces of the 20 teeth were prepared and assigned to two more groups of 10 teeth each. One group each of intact and prepared enamel surfaces were used to bond with the ‘etch-and-rinse’ bonding agent [Single bond (SB), 3M ESPE, MN, USA] and the other two groups one each of intact and prepared enamel surfaces were used to bond with the ‘all-in-one’ bonding agent [ iBond (IB), Heraeus Kulzer, NY, USA]. The tensile bond strength was measured on the universal testing machine (Unitek, 9450 PC, FIE, INDIA) at a cross head speed of 1 mm / minute. Results: The results were statistically analyzed using a one-way ANOVA and student ‘t’ test. The values for the ‘etch-and-rinse’ bonding agent SB were significantly higher for both the cut and uncut surfaces, compared to the ‘all-in-one’ bonding agent IB (P < 0.05). The all-in-one bonding agent resulted in a higher bond strength on the cut enamel surfaces. Conclusions: Based on the results, it is advisable to use the ‘etch-and-rinse system’ in a clinical situation requiring bonding on enamel alone. PMID:21814355

  18. Decontamination of U-metal Surface by an Oxidation Etching System

    SciTech Connect

    Stout, R B; Kansa, E J; Shaffer, R J; Weed, H C

    2000-12-18

    A surface oxidation treatment is described to remove surface contamination from uranium (U) metal and/or hydrides of uranium and heavy metals (HM) from U-metal parts. In the case of heavy metal atomic contamination on a surface, and potentially several atomic layers beneath, the surface oxidation treatment combines both chemical and chemically driven mechanical processes. The chemical process is a controlled temperature-time oxidization process that creates a thin film of uranium oxide (UO{sub 2} and higher oxides) on the U-metal surface. The chemically driven mechanical process is strain induced by the volume increase as the U-metal surface transforms to a UO{sub 2} surface film. These volume strains are sufficiently large to cause surface failure spalling/scale formation and thus, removal of a U-oxide film that contains the HM-contaminated surface. The case of a HM-hydride surface contamination layer can be treated similarly by using inert hot gas to decompose the U-hydrides and/or HM-hydrides that are contiguous with the surface. A preliminary analysis to design and to plan for a sequence of tests is developed. The tests will provide necessary and sufficient data to evaluate the effective implementation and operational characteristics of a safe and reliable system. The following description is limited to only a surface oxidation process for HM-decontamination.

  19. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  20. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu(2+)/bicinchoninic acid pair with improved sensitivity.

    PubMed

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2016-01-14

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu(2+). The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu(2+)/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu(2+) and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml(-1)) and a wide working range (0.5 to 1000 μg ml(-1)) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications. PMID:26669539

  1. Patterned biofunctional poly(acrylic acid) brushes on silicon surfaces.

    PubMed

    Dong, Rong; Krishnan, Sitaraman; Baird, Barbara A; Lindau, Manfred; Ober, Christopher K

    2007-10-01

    Protein patterning was carried out using a simple procedure based on photolithography wherein the protein was not subjected to UV irradiation and high temperatures or contacted with denaturing solvents or strongly acidic or basic solutions. Self-assembled monolayers of poly(ethylene glycol) (PEG) on silicon surfaces were exposed to oxygen plasma through a patterned photoresist. The etched regions were back-filled with an initiator for surface-initiated atom transfer radical polymerization (ATRP). ATRP of sodium acrylate was readily achieved at room temperature in an aqueous medium. Protonation of the polymer resulted in patterned poly(acrylic acid) (PAA) brushes. A variety of biomolecules containing amino groups could be covalently tethered to the dense carboxyl groups of the brush, under relatively mild conditions. The PEG regions surrounding the PAA brush greatly reduced nonspecific adsorption. Avidin was covalently attached to PAA brushes, and biotin-tagged proteins could be immobilized through avidin-biotin interaction. Such an immobilization method, which is based on specific interactions, is expected to better retain protein functionality than direct covalent binding. Using biotin-tagged bovine serum albumin (BSA) as a model, a simple strategy was developed for immobilization of small biological molecules using BSA as linkages, while BSA can simultaneously block nonspecific interactions. PMID:17880179

  2. Assessment of Microleakage of Class V Composite Resin Restoration Following Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) Laser Conditioning and Acid Etching with Two Different Bonding Systems

    PubMed Central

    Arbabzadeh Zavareh, Farahnaz; Samimi, Pouran; Birang, Reza; Eskini, Massoumeh; Bouraima, Stephane Ayoub

    2013-01-01

    Introduction: The use of laser for cavity preparation or conditioning of dentin and enamelsurfaces as an alternative for dental tissue acid-etch have increased in recent years. Theaim of this in vitro study was to compare microleakage at enamel-composite and dentincompositeinterfaces following Erbium-Doped Yttrium Aluminum Garnet(Er:YAG) laserconditioning or acid-etching of enamel and dentin, hybridized with different bonding systems. Methods: Class V cavities were prepared on the lingual and buccal surfaces of 50 recentlyextracted intact human posterior teeth with occlusal margin in the enamel and gingival marginin the dentin. The cavities were randomly assigned to five groups: group1:conditioned withlaser (Energy=120mJ, Frequency=10Hz, Pulse duration=100μs for Enamel and Energy=80mJ,Frequency=10Hz, Pulse duration=100μs for Dentin) + Optibond FL, group2:conditioned withlaser + etching with 35% phosphoric acid + Optibond FL, group3:conditioned with laser+ Clearfil SE Bond, group 4 (control):acid etched with 35% phosphoric acid + OptibondFL, group 5 (control): Clearfil SE Bond. All cavities were restored using Point 4 compositeresin. All samples were stored in distilled water at 37°c for 24 h, then were thermocycled for500 cycles and immersed in 50% silver nitrate solution for 24 h. The teeth were sectionedbucco-lingually to evaluate the dye penetration. Kruskal-Wallis & Mann-Whitney testswere used for statistical analysis. Results: In occlusal margins, the least microleakage showed in groups 2, 4 and 5. Themaximum microleakage was observed in group 3 (P=0.009). In gingival margins, the leastmicroleakage was recorded in group2, while the most microleakage was found in group5 (P=0.001). Differences between 5 study groups were statistically significant (P<0.05).The microleakage scores were higher at the gingival margins. Conclusion: The use of the Er:YAG laser for conditioning with different dentin adhesivesystems influenced the marginal sealing of composite resin

  3. Simulation of nonlinear superconducting rf losses derived from characteristic topography of etched and electropolished niobium surfaces

    NASA Astrophysics Data System (ADS)

    Xu, Chen; Reece, Charles E.; Kelley, Michael J.

    2016-03-01

    A simplified numerical model has been developed to simulate nonlinear superconducting radiofrequency (SRF) losses on Nb surfaces. This study focuses exclusively on excessive surface resistance (Rs ) losses due to the microscopic topographical magnetic field enhancements. When the enhanced local surface magnetic field exceeds the superconducting critical transition magnetic field Hc , small volumes of surface material may become normal conducting and increase the effective surface resistance without inducing a quench. We seek to build an improved quantitative characterization of this qualitative model. Using topographic data from typical buffered chemical polish (BCP)- and electropolish (EP)-treated fine grain niobium, we have estimated the resulting field-dependent losses and extrapolated this model to the implications for cavity performance. The model predictions correspond well to the characteristic BCP versus EP high field Q0 performance differences for fine grain niobium. We describe the algorithm of the model, its limitations, and the effects of this nonlinear loss contribution on SRF cavity performance.

  4. AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

    NASA Astrophysics Data System (ADS)

    Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

    2001-10-01

    The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

  5. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  6. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  7. Spectroscopic Ellipsometry Measurements of Wurtzite Gallium Nitride Surfaces as a Function of Buffered Oxide Etch Substrate Submersion

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester; Constantin, Costel; Duda, John; Hopkins, Patrick; Optical Studies of GaN interfaces Collaboration

    2013-03-01

    Gallium nitride (GaN) is considered the most important semiconductor after the discovery of silicon. Understanding the optical properties of GaN surfaces is imperative in determining the utility and applicability of this class of materials to devices. In this work, we present preliminary results of spectroscopic ellipsometry measurements as a function of surface root mean square (RMS). We used commercially available 5mm x 5mm, one side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a wurtzite crystal structure and they are slightly n-type doped. The GaN substrates were cleaned with Acetone (20 min)/Isopropanol(20 min)/DI water (20 min) before they were submerged into Buffered Oxide Etch (BOE) for 10s - 60s steps. This BOE treatment produced RMS values of 1-30 nm as measured with an atomic force microscope. Preliminary qualitative ellipsometric measurements show that the complex refractive index and the complex dielectric function decrease with an increase of RMS. More measurements need to be done in order to provide explicit quantitative results. This work was supported by the 4-VA Collaborative effort between James Madison University and University of Virginia.

  8. Thermodynamic and kinetic aspects of surface acidity

    SciTech Connect

    Dumesic, J.A.

    1992-01-01

    Our research in the general area of acid catalysis involves the characterization of solid acidity and the corresponding assessment of catalytic performance of acidic materials. Acid characterization studies are required to provide essential information about the type of acid site (i.e., Lewis versus Bronsted), the strength of the sites, and the mobility of molecules adsorbed on the acid sites. An accurate measure of acid strength is given by the heat of adsorption of a basic probe molecule on the acid site. A thermodynamic representation of the mobility of adsorbed species on these sites is given by the entropy of adsorption. Important techniques used in these acid site characterization studies include microcalorimetry, thermogravimetric measurements, temperature programmed desorption, infrared spectroscopy and solid state nuclear magnetic resonance. The combination of these acid site characterization studies with reaction kinetics measurements of selected catalytic processes allows the elucidation of possible relationships between surface thermodynamic and kinetic properties of acidic sites. Such relationships are important milestones in formulating effective strategies for the effective utilization of solid acid catalysts. Current work in this direction involves methylamine syntheses over various zeolites, and the basic probe molecules employed include ammonia, methanol, water and mono-, di- and tri-methylamines. 31 refs., 18 figs., 1 tab.

  9. Self-assembled and etched cones on laser ablated polymer surfaces

    NASA Astrophysics Data System (ADS)

    Murthy, N. S.; Prabhu, R. D.; Martin, J. J.; Zhou, L.; Headrick, R. L.

    2006-07-01

    At least two different routes lead to conical structures on laser ablated polymer surfaces. These were investigated by studying laser ablation on the surfaces of different classes of polymers. Cones appeared readily in strongly absorbing polymers such as poly(ethylene terephthalate) (PET) and polyimide (PI), but only within narrow laser parameters in nylon 6, and rarely in poly(chlorotrifluoroethylene), the last two being weak ultraviolet (UV) absorbers. Self-assembled, close-packed cones occurred in PET, in which heat generated due to absorbed laser energy creates a thin, chemically stable, viscoelastic, highly compliant layer (above the glass transition temperature). Surface structure in such polymers evolves from nodules through donuts into ripples and finally to cones as the energy deposited per unit area on the surface (total fluence) is increased using a combination of single pulse fluence and number of pulses. A phase transition from a ripple phase to a cone phase is thought to occur as the thickness of the viscoelastic surface layer increases above a critical value. Cones began to appear from almost the beginning of the irradiation process at random locations in PI, a polymer whose surface irreversibly turns into a hard solid upon exposure to either or both UV and heat. It is proposed that the radiation hardened spots serve as nuclei, a cone "grows" out of this as the material surrounding this nuclei is ablated. The initial sparse occurrence of cones in PI-like polymers, and the increase in their number density with total fluence until the surface is densely packed with cones can be explained by a nucleation and growth model.

  10. Effect of adhesive hydrophilicity and curing-time on the permeability of resins bonded to water vs. ethanol-saturated acid-etched dentin

    PubMed Central

    Cadenaro, Milena; Breschi, Lorenzo; Rueggeberg, Frederick A.; Agee, Kelli; Di Lenarda, Roberto; Carrilho, Marcela; Tay, Franklin R.; Pashley, David H.

    2009-01-01

    Objective This study examined the ability of five comonomer blends (R1-R5) of methacrylate-based experimental dental adhesives solvated with 10 mass% ethanol, at reducing the permeability of acid-etched dentin. The resins were light-cured for 20, 40 or 60 s. The acid-etched dentin was saturated with water or 100% ethanol. Method Human unerupted third molars were converted into crown segments by removing the occlusal enamel and roots. The resulting crown segments were attached to plastic plates connected to a fluid-filled system for quantifying fluid flow across smear layer-covered dentin, acid-etched dentin and resin-bonded dentin. The degree of conversion of the resins was measured using Fourier transform infrared spectroscopy. Result Application of the most hydrophobic comonomer blend (R1) to water-saturated dentin produced the smallest reductions in dentin permeability (31.9, 44.1 and 61.1% after light-curing for 20, 40 or 60 s respectively). Application of the same blend to ethanol-saturated dentin reduced permeability of 74.1, 78.4 and 81.2%, respectively (p<0.05). Although more hydrophilic resins produced larger reductions in permeability, the same trend of significantly greater reductions in ethanol-saturated dentin over that of water-saturated dentin remained. This result can be explained by the higher solubility of resins in ethanol vs. water. Significance The largest reductions in permeability produced by resins were equivalent but not superior, to those produced by smear layers. Resin sealing of dentin remains a technique-sensitive step in bonding etch-and-rinse adhesives to dentin. PMID:18571228

  11. Chemical method for producing smooth surfaces on silicon wafers

    SciTech Connect

    Yu, Conrad

    2003-01-01

    An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

  12. Method for cleaning a solar cell surface opening made with a solar etch paste

    DOEpatents

    Rohatgi, Ajeet; Meemongkolkiat, Vichai

    2010-06-22

    A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

  13. Surface Modification Energized by Focused Ion Beam: The Influence of Etch Rates & Aspect Ratio on Ripple Wavelengths.

    SciTech Connect

    MoberlyChan, W J

    2006-11-15

    Ion beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond ({approx}200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity; and ripples <0.4nm are also fabricated on carbon surfaces and quantified by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material exhibits a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the

  14. Interaction morphology and bond strength of nanofilled simplified-step adhesives to acid etched dentin

    PubMed Central

    Di Hipólito, Vinicius; Reis, André Figueiredo; Mitra, Sumita B.; de Goes, Mario Fernando

    2012-01-01

    Objective: To evaluate the effect of nanofillers incorporated into adhesives on the microtensile bond strength (μ-TBS) and interfacial micromorphology to dentin. Methods: The occlusal enamel of 5 human molars was removed and each tooth sectioned into four quarters. The exposed dentin was treated with one of the following adhesives: Adper Single Bond (SB-unfilled), OptiBond Solo Plus (OS-barium aluminoborosilicate, 400nm Ø), Prime & Bond NT (NT-colloidal silica, 7–40 nm Ø) and Adper Single Bond 2 (SB2-colloidal silica, 5nm Ø). Cylinders of resin-based composite were constructed on the adhesive layers. After 24-hour storage, the restored tooth-quadrants were sectioned to obtain stick-shaped specimens (0.8 mm2, cross-sectional area) and submitted to μ-TBS at a cross-speed of 0.5 mm/min. Data were analyzed using one-way ANOVA and Tukey’s test (alpha = .05). Twenty-eight additional teeth were used for interfacial micro-morphologic analysis by SEM (16-teeth) and TEM (12-teeth). The dentin surfaces of 32 discs were treated with the adhesives (8 discs for adhesive) and laminated to form disc-pairs using a flowable resin composite for SEM/EDS analysis. For TEM, 90nm-thick nondemineralized unstained sections were processed. Results: SB2 showed significant higher bond strength than SB, OS and NT. The SEM/EDS and TEM analysis revealed nanofillers infiltrated within the interfibrillar spaces of the SB2-hybrid layer. Fillers were concentrated around patent tubular orifices and in the adhesive layer for OS and NT. Conclusion: The presence of nanofillers within the interfibrillar spaces of the SB2-hybrid layer suggests its importance in the improvement of the μ-TBS. PMID:23077413

  15. Bond strength with various etching times on young permanent teeth

    SciTech Connect

    Wang, W.N.; Lu, T.C. )

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  16. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  17. Highly roughened polycaprolactone surfaces using oxygen plasma-etching and in vitro mineralization for bone tissue regeneration: fabrication, characterization, and cellular activities.

    PubMed

    Kim, YongBok; Kim, GeunHyung

    2015-01-01

    Herein, poly(ɛ-caprolactone) (PCL) surfaces were treated to form various roughness values (R(a)=290-445 nm) and polar functional groups on the surfaces using a plasma-etching process, followed by immersion into simulated body fluid (SBF) for apatite formation. The surface morphology, chemical composition, and mean roughness of the plasma-etched PCL surfaces were measured, and various physical and morphological properties (water contact angles, protein absorption ability, and crystallite size of the apatite layer) of the in vitro mineralized PCL surfaces were evaluated. The roughened PCL surface P-3, which was treated with a sufficient plasma exposure time (4 h), achieved homogeneously distributed apatite formation after soaking in SBF for 7 days, as compared with other surfaces that were untreated or plasma-treated for 30 min or 2 h. Furthermore, to demonstrate their feasibility as a biomimetic surface, pre-osteoblast cells (MC3T3-E1) were cultured on the mineralized PCL surfaces, and cell viability, DAPI-phalloidin fluorescence assay, and alizarin red-staining of the P-3 surface were highly improved compared to the P-1 surface treated with a 30-min plasma exposure time; compared to untreated mineralized PCL surface (N-P), P-3 showed even greater improvements in cell viability and DAPI-phalloidin fluorescence assay. Based on these results, we found that the mineralized PCL surface supplemented with the appropriate plasma treatment can be implicitly helpful to achieve rapid hard tissue regeneration. PMID:25486326

  18. Surface dynamics and breakdown patterns of a random solid subject to a biased 3D etching

    NASA Astrophysics Data System (ADS)

    Reverberi, A. P.; Maga, L.; Barbucci, A.; Bruzzone, A. G.

    2009-01-01

    We propose a selective disaggregation model in three dimensions with a mixed Brownian-deterministic motion of the etchant particle driven by a tuning parameter taking into account the presence of an external field. The width of the surface sites in saturation is described by the Edwards-Wilkinson scaling law as in a ballistic selective decay process. Besides, we consider the surfaces resulting when the solid substrate is completely eroded up to the electrical breakdown. In this situation, we analyse the effects of the etchant particle motion on the topology and conductivity of the residual substrate and we compare the relevant patterns with the ones related to the classical percolation theory. These results may interpret some recent experimental findings in electrochemical nanotechnology.

  19. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  20. Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

    PubMed

    Ahmad, Muthanna; Grime, Geoffrey W

    2013-04-01

    Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS. PMID:23388452

  1. Biomimetic Deposition of Hydroxyapatite by Mixed Acid Treatment of Titanium Surfaces.

    PubMed

    Zhao, J M; Park, W U; Hwang, K H; Lee, J K; Yoon, S Y

    2015-03-01

    A simple chemical method was established for inducing bioactivity of Ti metal. In the present study, two kinds of mixed acid solutions were used to treat Ti specimens to induce Ca-P formation. Following a strong mixed acid activation process, Ca-P coatings successfully formed on the Ti surfaces in the simulated body fluid. Strong mixed acid etching was used to increase the roughness of the metal surface, because the porous and rough surfaces allow better adhesion between Ca-P coatings and substrate. Nano-scale modification of titanium surfaces can alter cellular and tissue responses, which may benefit osseointegration and dental implant therapy. Some specimens were treated with a 5 M NaOH aqueous solution, and then heat treated at 600 °C in order to form an amorphous sodium titanate layer on their surface. This treated titanium metal is believed to form a dense and uniform bone-like apatite layer on its surface in a simulated body fluid (SBF). This study proved that mixed acid treatment is not only important for surface passivation but is also another bioactive treatment for titanium surfaces, an alternative to alkali treatment. In addition, mixed acid treatment uses a lower temperature and shorter time period than alkali treatment. PMID:26413704

  2. Surface-Morphology-Induced Hydrophobicity of Fluorocarbon Films Grown by a Simultaneous Etching and Deposition Process

    NASA Astrophysics Data System (ADS)

    Fang, J. S.; Lin, C. S.; Huang, Y. Y.; Chin, T. S.

    2015-08-01

    Development of facile methods to prepare hydrophobic films is of great important. We report fluorocarbon films deposited by a simple plasma-assisted chemical vapor deposition method using C3F8 and C2H2 with extra Ar and/or O2 gases. The surface characteristics of the films were examined by scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The hydrophobic and oleophobic properties of the films were evaluated by measurements of static contact angle. The results showed that the film deposited with C3F8, C2H2, Ar, and O2 exhibited a water contact angle of 114°, hexadecane contact angle of 45°, and transmittance of 94.5%. Photoelectron spectra further revealed that the films contained mainly CF and CF2 bonds and thus a high F/C ratio. Introduction of O2 increased the F/C ratio, which combined with the stripe-like surface of the films achieved better hydrophobicity.

  3. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  4. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

    SciTech Connect

    Tasaka, Akimasa; Kotaka, Yuki; Oda, Atsushi; Saito, Morihiro; Tojo, Tetsuro; Inaba, Minoru

    2014-09-01

    In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the number of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.

  5. Serially etched shark enameloid observed by incident light microscopy.

    PubMed

    Risnes, S; Fosse, G

    1979-01-01

    Longitudinal and transverse tooth sections of Isurus oxyrinchus were serially etched in 2.6% nitric acid. The changing optical properties of the etched surfaces were observed during the serial etchings, and the descent of the enameloid surfaces was measured. Shark enameloid seems to be less effectively etched by acid than human enamel; this difference may be due to differences in solubility between fluorapatite and hydroxyapatite. Most of the information regarding the structure of the enameloid was gained during the first five of ten etchings. The reflection of light from the surface was influenced by the orientation of the crystallites, longitudinally sectioned crystallites reflecting the light better than transversely sectioned crystallites. The dentinal extensions were continuous with and of the same structure as the underlying dentine. The radial fibers originated from the dentinal extensions, and they both contained organic material and were accompanied by crystallites. When the specimens were imbibed with water the distinctness of the dentinal extensions and radial fibers was improved. PMID:525241

  6. Industrial ion source technology. [for ion beam etching, surface texturing, and deposition

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.

    1977-01-01

    Plasma probe surveys were conducted in a 30-cm source to verify that the uniformity in the ion beam is the result of a corresponding uniformity in the discharge-chamber plasma. A 15 cm permanent magnet multipole ion source was designed, fabricated, and demonstrated. Procedures were investigated for texturing a variety of seed and surface materials for controlling secondary electron emission, increasing electron absorption of light, and improved attachment of biological tissue for medical implants using argon and tetrafluoromethane as the working gases. The cross section for argon-argon elastic collisions in the ion-beam energy range was calculated from interaction potentials and permits calculation of beam interaction effects that can determine system pumping requirements. The data also indicate that different optimizations of ion-beam machines will be advantageous for long and short runs, with 1 mA-hr/cm being the rough dividing line for run length. The capacity to simultaneously optimize components in an ion-beam machine for a single application, a capacity that is not evident in competitive approaches such as diode sputtering is emphasized.

  7. Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

    NASA Astrophysics Data System (ADS)

    Liao, Ying-Jie; Lou, Yan-Hui; Wang, Zhao-Kui; Liao, Liang-Sheng

    2014-11-01

    A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current—voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

  8. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    NASA Astrophysics Data System (ADS)

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  9. 24% Indigenously Prepared Ethylene Diamine Tetra Acetic Acid Compared to Self-Etching Adhesives and their Effect on Shear Bond Strength of Composites in Primary Teeth: An In-vitro Study

    PubMed Central

    Nagar, Priya; Tandil, Yogesh L.; T.P., Chandru; Gupta, Anamika; Kalaria, Devendra; Kumar, Prafful

    2015-01-01

    Background: Over the years, it has been known that 34% phosphoric acid is the benchmark in etchants with the best shear bond strength shown with composites in primary teeth. However, with latest technological advancements and innovations, in order to reduce the number of steps and less damage to the tooth structure, non-rinse conditioner (NRC) & Single-Etch and various other etchants have been tried and tested. These etchants have been found to have shear bond strength comparable to phosphoric acid. In this study, indigenously prepared 24% ethylenediaminetetraacetic acid (EDTA) has been compared with established etchants, as to prove if their shear bond strength was closely related. As it is a well-known fact that EDTA could be less damaging to the enamel during etching and hence can be an alternative for etching of primary teeth. Materials and Methods: For the study 60 caries-free primary molars were used, they were sectioned in the middle, after making area for bonding; the marked area was then etched using different etchants for 30 s. Each of the teeth was then rinsed and bonded with composite resin and thermocycling was done. Shear bond strength testing was done on the composite using Universal Testing Machine. Results: Results of the study showed that phosphoric acid showed the highest bond strength, closely followed by Single Etch (Adper Prompt) and NRC, then by EDTA. Conclusions: About 24% EDTA can be another comparable replacement for phosphoric acid if used with a Single Etch Primer, like Prime and Bond NT on primary teeth. 34% phosphoric acid has the highest bond strength values with composite resin. Single etch followed by NRC has the second and third highest bond strength values, which are comparable to phosphoric acid. PMID:26464540

  10. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    SciTech Connect

    Ansah-Antwi, KwaDwo Konadu Chua, Soo Jin; Soh, Chew Beng; Liu, Hongfei

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  11. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  12. Etching conditions for resin-modified glass ionomer cement for orthodontic brackets.

    PubMed

    Valente, Rudolfo M; De Rijk, Waldemar G; Drummond, James L; Evans, Carla A

    2002-05-01

    This study reports the tensile bond strength of orthodontic eyelets (RMO, Inc, Denver, Colo) bonded to human extracted teeth with a resin-modified glass ionomer cement (RMGIC) (Fuji Ortho LC, GC America, Alsip, Ill) and various acid etchants (Etch-37 and All-Etch, Bisco, Schaumburg, Ill; Ultra Etch, 3M Unitek, St Paul, Minn) for enamel preparation before bonding. The enamel etch conditions were as follows: 37% phosphoric acid with silica; 37% phosphoric acid, silica-free; 10% phosphoric acid, silica-free; 10% polyacrylic acid; and unetched enamel. Bond strength was measured by pulling in tension on the eyelet with a 0.018-in steel wire perpendicular to the enamel surface with a testing machine (Instron model 1125, Canton, Mass) at a speed of 2 mm/min. A light-cured resin cement (Transbond XT, 3M Unitek, Monrovia, Calif) applied to enamel etched with 37% phosphoric acid containing silica served as a control. Each group included 30 specimens. The Weibull distribution (m) was used for statistical analysis with a 90% CI. The different etchants used with RMGIC did not affect tensile bond strength. The resin cement group had the highest tensile strength. Significantly lower bond strengths were observed when glass ionomer cement was used to bond orthodontic attachments to nonetched teeth. However, unlike resin cement, RMGIC can bond effectively to etched teeth in a moist environment without an additional bonding agent. PMID:12045770

  13. Surface pH and bond strength of a self-etching primer/adhesive system to intracoronal dentin after application of hydrogen peroxide bleach with sodium perborate.

    PubMed

    Elkhatib, Hanadi; Nakajima, Masatoshi; Hiraishi, Noriko; Kitasako, Yuichi; Tagami, Junji; Nomura, Satoshi

    2003-01-01

    This study compared the dentin bond strength of a self-etching primer/adhesive system with dentin surface pH with or without bleaching and observed the morphological changes in bleached dentin treated with a self-etching primer. Dentin disks were prepared from the coronal-labial region of 32 human anterior teeth. The pulpal surfaces of the dentin disks were polished with 600-grit SiC paper under running water. The dentin surfaces on all specimens were bleached with a mixture of 30% hydrogen peroxide and sodium perborate in 100% humidity at 37 degrees C for one week. The bleaching agent was then rinsed off with water for 5, 15 or 30 seconds. All specimens were stored in water at 37 degrees C. Half of the five-second rinsing specimens were stored in water for an additional week. Dentin surface pH with or without bleaching was examined using a pH-imaging microscope (SCHEM-100). A self-etching primer/adhesive system (Clearfil SE Bond) was applied to bleached or unbleached dentin according to the manufacturer's instructions. After 24-hour water storage, the bonded specimens were prepared for microtensile testing. Microtensile bond strength (microTBS) to dentin was measured using a universal-testing machine (EZ test, Shimadzu, Japan) at a crosshead speed of 1.0 mm/minute. Data were analyzed by one-way ANOVA and Scheffe's test (alpha=0.05). The pH values of the dentin surfaces of the 5 and 15 second rinsing groups were significantly higher than the control group (p<0.05), while the 30-second rinsing and one-week water storage groups had similar surface pH values to the control group (p<0.05). The microTBS of 5, 15 and 30 second rinsing specimens after bleaching were significantly lower than the control specimens (p<0.05). However, after one-week of water storage, the microTBS returned to the control group. The application of a bleaching agent increased the pH value of the dentin surface and decreased the bond strength of the self-etching primer/adhesive system. One

  14. Etching studies on lutetium yttrium orthosilicate LuxY2-xSiO5:Ce (LYSO) scintillator crystals

    NASA Astrophysics Data System (ADS)

    Péter, Á.; Berze, N.; Lengyel, K.; Lörincz, E.

    2010-11-01

    Surface dissolution has been investigated on {100}, {010}, {001}, {110} and {101} oriented Lu1.6Y0.4SiO5:Ce crystal samples by using orthophosphoric acid up to 180°C. Depending on the etching temperature and surface orientation smooth or bunched surfaces were produced. In order to study the effect of the etching process on the scintillation properties temperature dependent optical absorption measurements were carried out up to 236°C. It was found that depending on the post-growth history of the sample, etching may influence the scintillation mechanism by modifying the concentration of shallow traps.

  15. Ethylene Diamine Tetraacetic Acid Etched Quantum Dots as a "Turn-On" Fluorescence Probe for Detection of Trace Zinc in Food.

    PubMed

    Liu, Wei; Wei, Fangdi; Xu, Guanhong; Wu, Yanzi; Hu, Chunting; Song, Quan; Yang, Jing; Hu, Qin

    2016-06-01

    In the present paper, a simple and rapid "turn-on" fluorescence sensor for Zn2+ based on ethylene diamine tetraacetic acid (EDTA) etched CdTe quantum dots (QDs) was developed. First, the initial bright fluorescence of mercaptopropionic acid (MPA) capped CdTe QDs was effectively quenched by EDTA, and then the presence of Zn2+ could "turn on" the weak fluorescence of QDs quenched by EDTA due to the formation of ZnS passivation shell. The increase of fluorescence intensity of EDTA etched QDs was found to be linear with the concentration of Zn2+ added. Under the optimum conditions, the calibration curve of this method showed good linearity in the concentration range of 9.1-1 09.1 μM of Zn2+ with the correlation coefficient R2 = 0.998. The limit of detection (3σ/K) was 2 μM. The developed QDs-based sensor was successfully applied to detect trace zinc in zinc fortified table salts and energy drinks with satisfactory results. PMID:27427745

  16. Etching Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1983-01-01

    20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

  17. Reactive Ion Etching of Polymers in Oxygen Based Plasmas: a Study of Etch Mechanisms.

    NASA Astrophysics Data System (ADS)

    Graham, Sandra Wolterman

    The reactive ion etching of polymers has been studied in oxygen-based plasmas in an effort to understand the contributions of various mechanisms to the etching of these materials. Of the four active etch mechanisms; surface damage promoted etching, chemical sputtering, chemically enhanced physical sputtering, and direct reactive ion etching; the emphasis of this work has been on determining the relative contribution of direct reactive ion etching to the overall etching process. The etching of photoresist, polyimide, and amorphous carbon in O_2-CF_4 plasmas was studied in an asymmetrical reactive ion etcher at pressures ranging from 5 to 100 mtorr. Etch yield, ion flux, and oxygen atom concentration data were collected. The fit of this data to a linear model proposed by Joubert et al. (J. Appl. Phys., 65, 1989, 5096) was compared to the fit of the data to a nonlinear model proposed by the author. The linear model accounts for contribution due to three of the four etch mechanisms, but does not include contributions due to direct reactive ion etching. The nonlinear model accounts for contributions due to all four etch mechanisms. Experimental results indicate that the nonlinear model provides a better fit to the data than does the linear model. The relative contribution of direct reactive ion etching to the etching of photoresist ranges from 27% to 81% as the pressure decreases from 100 to 5 mtorr. Similar results are obtained for polyimide and amorphous carbon.

  18. Influence of light intensity on surface-free energy and dentin bond strength of single-step self-etch adhesives.

    PubMed

    Nojiri, Kie; Tsujimoto, Akimasa; Suzuki, Takayuki; Shibasaki, Syo; Matsuyoshi, Saki; Takamizawa, Toshiki; Miyazaki, Masashi

    2015-01-01

    In this study, we investigated the influence of light intensity on the surface-free energy and dentin bond strength of single-step selfetch adhesives. The adhesives were applied to the dentin surfaces of bovine mandibular incisors and cured with light intensities of 0 (no irradiation), 200, 400, and 600 mW/cm(2). Surface-free energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. Dentin bond strengths of the specimens were also measured. Polymerization with a higher light intensity resulted in a lower surface-free energy of the cured adhesives. The greatest bond strength was achieved when a light intensity of 400 mW/cm(2) or greater was used. Our data suggest that the surface-free energy and dentin bond strength of single-step self-etch adhesives are affected by light intensity of the curing unit. PMID:26438984

  19. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  20. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  1. Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

    SciTech Connect

    Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N.

    2015-08-15

    Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use of a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.

  2. Pt interactions with annealed and chemically-etched Nb-doped SrTiO 3(0 0 1) surfaces: Metal/oxide surface chemical effects on band bending behavior

    NASA Astrophysics Data System (ADS)

    Vamala, Chiranjeevi; Manandhar, Sudha; Kelber, Jeff

    2009-01-01

    XPS and LEED have been used to characterize the interaction of sputter-deposited Pt (maximum coverage <5 ML) with Nb-doped SrTiO3(0 0 1) surfaces prepared either by annealing in O2 and then UHV, or by chemical-etching in aqua regia. The annealed surface exhibits an ordered (1 × 1) LEED pattern, with additional diffraction spots and streaks indicating the presence of oxygen vacancies. Increasing Pt coverage results in the decrease of the observed Pt(4f7/2) binding energy and the uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to smaller binding energies, as expected for Pt cluster growth and surface-to-Pt charge donation on an n-type semiconductor. The etched surface is disordered, and exhibits a hydroxylated surface with a contaminant C film of ∼23 Ǻ average thickness. Pt deposition on the etched surface results in an immediate decrease in the intensity of the OH feature in the O(1s) spectrum, and a uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to larger binding energies with increasing Pt coverage. The observed Pt(4f7/2) binding energy on the etched surface (∼72 eV) is independent of Pt coverage, and indicates substantial electronic charge donation from the Pt to surface hydroxyl species. The observation of band bending towards higher binding energies upon Pt deposition (behavior normally associated with p-type semiconductors) demonstrates that sub-monolayer quantities of adsorbates can alter metal/oxide interfacial charge transfer and reverse the direction of band bending, with important consequences for Schottky barrier heights and device applications.

  3. Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

    NASA Astrophysics Data System (ADS)

    Zhong, X. X.; Tam, E.; Huang, X. Z.; Colpo, P.; Rossi, F.; Ostrikov, K.

    2010-09-01

    We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as "laboratory on a chip" and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO2/Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

  4. Effect of input power and gas pressure on the roughening and selective etching of SiO{sub 2}/Si surfaces in reactive plasmas

    SciTech Connect

    Zhong, X. X.; Huang, X. Z.; Tam, E.; Ostrikov, K.; Colpo, P.; Rossi, F.

    2010-09-15

    We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as 'laboratory on a chip' and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO{sub 2} can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO{sub 2}/Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

  5. Orientation-dependent nanostructure arrays based on anisotropic silicon wet-etching for repeatable surface-enhanced Raman scattering

    NASA Astrophysics Data System (ADS)

    Wang, C. G.; Wu, X. Z.; di, D.; Dong, P. T.; Xiao, R.; Wang, S. Q.

    2016-02-01

    Repeatable fabrication of sensitive plasmonic substrates through a simple procedure has become a major challenge for SERS-based sensing and imaging. Herein, a new class of high-performance SERS substrates, including pyramid, ridged-hexagon, and quasi-triangle nanostructures, is successfully fabricated based on the nanosphere lithography technique and anisotropic wet etching. Using the wafer-scale Cr-hole array as the etching mask, cavity-templates of various configurations are fabricated by the orientation-dependent wet etching technique, from where the nanostructure arrays are finally peeled-off. The anisotropic wet etching on (100), (110), and (111) silicon wafers has been systematically studied at the nanoscale revealing the formation mechanism of these cavity-templates. The peeled-off nanostructure arrays provide high-density tips and/or gaps (about 2.5 × 107 mm-2) and thus facilitate the generation of ``hot spots''. The distribution of the electromagnetic field is visualized by the finite difference time domain calculation. And the calculation results are validated by SERS characterization. The SERS enhancement factors of these substrates are in the order of 106-107, with the maximum enhancement factor of 1.32 × 107 yielded by the ridged-hexagon arrays. The proposed nanostructure arrays present excellent homogeneity and reproducibility (with the largest relative standard deviation of 16.43%) for the reason that the SERS-active substrates are peeled-off from an identical template. The cost-effective fabrication, high sensitivity, good homogeneity and well-performed reproducibility demonstrate that these orientation-dependent NSs are good candidates for SERS-based in vitro and in situ detection and biosensing.Repeatable fabrication of sensitive plasmonic substrates through a simple procedure has become a major challenge for SERS-based sensing and imaging. Herein, a new class of high-performance SERS substrates, including pyramid, ridged-hexagon, and quasi

  6. Orientation-dependent nanostructure arrays based on anisotropic silicon wet-etching for repeatable surface-enhanced Raman scattering.

    PubMed

    Wang, C G; Wu, X Z; Di, D; Dong, P T; Xiao, R; Wang, S Q

    2016-02-28

    Repeatable fabrication of sensitive plasmonic substrates through a simple procedure has become a major challenge for SERS-based sensing and imaging. Herein, a new class of high-performance SERS substrates, including pyramid, ridged-hexagon, and quasi-triangle nanostructures, is successfully fabricated based on the nanosphere lithography technique and anisotropic wet etching. Using the wafer-scale Cr-hole array as the etching mask, cavity-templates of various configurations are fabricated by the orientation-dependent wet etching technique, from where the nanostructure arrays are finally peeled-off. The anisotropic wet etching on (100), (110), and (111) silicon wafers has been systematically studied at the nanoscale revealing the formation mechanism of these cavity-templates. The peeled-off nanostructure arrays provide high-density tips and/or gaps (about 2.5 × 10(7) mm(-2)) and thus facilitate the generation of "hot spots". The distribution of the electromagnetic field is visualized by the finite difference time domain calculation. And the calculation results are validated by SERS characterization. The SERS enhancement factors of these substrates are in the order of 10(6)-10(7), with the maximum enhancement factor of 1.32 × 10(7) yielded by the ridged-hexagon arrays. The proposed nanostructure arrays present excellent homogeneity and reproducibility (with the largest relative standard deviation of 16.43%) for the reason that the SERS-active substrates are peeled-off from an identical template. The cost-effective fabrication, high sensitivity, good homogeneity and well-performed reproducibility demonstrate that these orientation-dependent NSs are good candidates for SERS-based in vitro and in situ detection and biosensing. PMID:26853057

  7. Acidic deposition and surface water chemistry

    NASA Astrophysics Data System (ADS)

    Church, M. R.

    A pair of back-to-back (morning and afternoon) hydrology sessions, held December 10, 1987, at the AGU Fall Meeting in San Francisco, Calif., covered “Predicting the Effects of Acidic Deposition on Surface Water Chemistry.” The combined sessions included four invited papers, 12 contributed papers, and a panel discussion at its conclusion. The gathering dealt with questions on a variety of aspects of modeling the effects of acidic deposition on surface water chemistry.Contributed papers included discussions on the representation of processes in models as well as limiting assumptions in model application (V. S. Tripathi et al., Oak Ridge National Laboratory, Oak Ridge, Tenn., and E. C. Krug, Illinois State Water Survey, Champaign), along with problems in estimating depositional inputs to catchments and thus inputs to be used in the simulation of catchment response (M. M. Reddy et al., U.S. Geological Survey, Lakewood, Colo.; and E. A. McBean, University of Waterloo, Waterloo, Canada). L. A. Baker et al. (University of Minnesota, Minneapolis) dealt with the problem of modeling seepage lake systems, an exceedingly important portion of the aquatic resources in Florida and parts of the upper U.S. Midwest. J. A. Hau and Y. Eckstein (Kent State University, Kent, Ohio) considered equilibrium modeling of two northern Ohio watersheds that receive very different loads of acidic deposition but are highly similar in other respects.

  8. Etching Behavior of Aluminum Alloy Extrusions

    NASA Astrophysics Data System (ADS)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  9. Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, Robert T.; Schuller, Ivan K.; Falco, Charles M.

    1981-01-01

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  10. Method for etching thin films of niboium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, R.T.; Schuller, I.K.; Falco, C.M.

    1979-11-23

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds is provided in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid, and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  11. Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

    SciTech Connect

    Schmidt, Torsten; Zhang, Miao; Linnros, Jan; Yu, Shun

    2014-09-22

    We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find the limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.

  12. Secret of formulating a selective etching or cleaning solution for boron nitride (BN) thin film

    NASA Astrophysics Data System (ADS)

    Hui, Wing C.

    2004-04-01

    Boron nitride thin film has a very unique characteristic of extremely high chemical inertness. Thus, it is a better hard mask than silicon nitride for aggressive etching solutions, such as the isotropic HF/HNO3/CH3COOH (or HNA) etchant for silicon. However, because of its high chemical inertness, it is also difficult to remove it. Plasma etching with Freon gases can etch the boron nitride film, but it is unselective to silicon, silicon dioxide or silicon nitride. Cleaning up the boron nitride film with plasma etching will usually leave a damaged or foggy surface. A special wet chemical solution has been developed for etching or cleaning boron nitride film selectively. It can etch boron nitride, but not the coatings or substrates of silicon, silicon nitride and silicon dioxide. It is a very strong oxidizing agent consisting of concentrated sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), but different from the common Piranha Etch. It may be even more interesting to understand the logic or secret behind of how to formulate a new selective etching solution. Various chemical and chemical engineering aspects were considered carefully in our development process. These included creating the right electrochemical potential for the etchant, ensuring large differences in chemical kinetics to make the reactions selective, providing proper mass transfer for removing the by products, etc.

  13. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  14. Adiabatic tapered optical fiber fabrication in two step etching

    NASA Astrophysics Data System (ADS)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  15. Tuning photonic crystal nanocavity modes by wet chemical digital etching

    NASA Astrophysics Data System (ADS)

    Hennessy, K.; Badolato, A.; Tamboli, A.; Petroff, P. M.; Hu, E.; Atatüre, M.; Dreiser, J.; Imamoǧlu, A.

    2005-07-01

    We have developed a wet chemical digital etching technique for tuning the resonant wavelengths of photonic crystal (PC) nanocavities over a wide range of 80nm in precise 2-3nm steps while preserving high cavity quality factors. In one tuning step, a few monolayers of material are removed from the cavity surface by etching a self-formed native oxide in 1mol citric acid. Due to the self-limiting oxide thickness, total tuning range is based only on the number of etch steps, resulting in a highly controlled, digital tuning ability. We have characterized the tuning behavior of GaAs PC defect cavities of both square and triangular lattice symmetry and proven the effectiveness of this method by tuning a mode into resonance with the charged exciton, and then later the biexciton, transition of a single InAs /GaAs self-assembled quantum dot.

  16. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  17. The effect of additional etching and curing mechanism of composite resin on the dentin bond strength

    PubMed Central

    Lee, In-Su; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2013-01-01

    PURPOSE The aim of this study was to evaluate the effects of additional acid etching and curing mechanism (light-curing or self-curing) of a composite resin on the dentin bond strength and compatibility of one-step self-etching adhesives. MATERIALS AND METHODS Sixteen human permanent molars were randomly divided into eight groups according to the adhesives used (All-Bond Universal: ABU, Clearfil S3 Bond: CS3), additional acid etching (additional acid etching performed: EO, no additional acid etching performed: EX), and composite resins (Filtek Z-250: Z250, Clearfil FII New Bond: CFNB). Group 1: ABU-EO-Z250, Group 2: ABU-EO-CFNB, Group 3: ABU-EX-Z250, Group 4: ABU-EX-CFNB, Group 5: CS3-EO-Z250, Group 6: CS3-EO-CFNB, Group 7: CS3-EX-Z250, Group 8: CS3-EX-CFNB. After bonding procedures, composite resins were built up on dentin surfaces. After 24-hour water storage, the teeth were sectioned to make 10 specimens for each group. The microtensile bond strength test was performed using a microtensile testing machine. The failure mode of the fractured specimens was examined by means of an optical microscope at ×20 magnification. The data was analyzed using a one-way ANOVA and Scheffe's post-hoc test (α=.05). RESULTS Additional etching groups showed significantly higher values than the no additional etching group when using All-Bond Universal. The light-cured composite resin groups showed significantly higher values than the self-cured composite resin groups in the Clearfil S3 Bond. CONCLUSION The additional acid etching is beneficial for the dentin bond strength when using low acidic one-step self-etch adhesives, and low acidic one-step self-etch adhesives are compatible with self-cured composite resin. The acidity of the one-step self-etch adhesives is an influencing factor in terms of the dentin bonding strength and incompatibility with a self-cured composite resin. PMID:24353889

  18. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  19. Rapid, Non-Mechanical, Damage Free Figuring Of Optical Surfaces Using Plasma Assisted Chemical Etching (PACE): Part Ii Theory & Process Control

    NASA Astrophysics Data System (ADS)

    Zarowin, C. B.; Bollinger, L. D.

    1989-01-01

    We describe an application of Plasma Assisted Chemical Etching (PACE) to rapid and controllable figuring and smoothing of optical surfaces without mechanical contact. This removes the usual constraints on the design of optical elements imposed by mechanical pro-cesses, such as substrate deformation, edge distortion and subsurface damage or contamination. This process employs a process originally developed to pattern microelectronic circuits by ion enhanced chemical etching of a solid (Si02, Si, Al, Au, etc.) through a relatively nonerodeable photolithographically patterned mask1,-2. The PACE process shapes the optical surface by removing material in a small area under a confined reactive gas plasma (a "puck") moved over this surface. Rates of removal of such processes in microelectronic applications are as high as 10 pm per minute and are very accurately controllable and repeatable. The removal "footprint" of PACE may be varied during the process and it inherently smooths or polishes while exposing a virgin surface free of process generated contamination and subsurface damage. It can operate in two modes: (1) in "contact" with the plasma, where the chemical reaction is driven by the kinetic energy given up at the reacting surface by short lived species such as ions; and (2) downstream of the plasma, by the stored energy freed at the surface by longer lived species such as excited metastable neutrals. Since control of this process is so important to this application, we sketch the generic physics and chemi hi stry1,2 of the PACE figuring and smoothing process, identifying the quantitative relations between the plasma and chemical parameters that control it:rf power density reactive gas pressure reactive gas flow the reactor surface temperatures and the pertinent transport chemistry.

  20. Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films.

    PubMed

    Felmetsger, V; Mikhov, M; Laptev, P

    2015-02-01

    In this work, we describe the design and operation of a planarized capacitively coupled RF plasma module and investigate the effects of non-reactive RF plasma etching on Si (100) wafer surface morphology and crystal orientation of Al bottom electrodes and subsequently deposited AlN films. To ensure formation of highly (111) textured Al electrode, a thin 25-nm AlN seed layer was grown before the Al deposition. The seed layer's orientation efficiency improved with increasing the RF power from 70 to 300 W and resulted in narrowing the Al (111) rocking curves. AFM and XRD data have shown that crystal orientations of both the electrode and reactively sputtered AlN film are considerably improved when the substrate micro roughness is reduced from an ordinary level of a few nanometers to atomic level corresponding to root mean square roughness as low as about 0.2 to 0.3 nm. The most perfectly crystallized film stacks of 100-nm Al and 500-nm AlN were obtained in this work using etching in Ar plasma optimized to create an atomically smooth, epi-ready Si surface morphology that enables superior AlN seed layer nucleation conditions. X-ray rocking curves around the Al (111) and AlN (0002) diffraction peaks exhibited extremely low FWHM values of 0.68° and 1.05°, respectively. PMID:25643087

  1. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  2. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  3. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N–H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  4. Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Ren, Z.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.; Yu, S.

    2008-02-01

    The etching characteristics of congruent LiNbO3 single crystals including doped LiNbO3 and proton-changed LiNbO3 have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO3 have been fabricated and optically measured.

  5. Nanostructured porous silicon by laser assisted electrochemical etching

    NASA Astrophysics Data System (ADS)

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  6. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    PubMed

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. PMID:26918658

  7. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  8. Effect of enamel etching time on roughness and bond strength.

    PubMed

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra) and composite to enamel shear bond strengths (SBS) were determined following the treatment of flat ground human enamel (4000 grit) with five adhesive systems: (1) Adper Single Bond Plus (SBP), (2) Adper Prompt L-Pop (PLP), (3) Clearfil SE Bond (CSE), (4) Clearfil S3 Bond (CS3) and (5) Xeno IV (X4), using recommended treatment times and an extended treatment time of 60 seconds (n = 10/group). Control groups were also included for Ra (4000 grit surface) and SBS (no enamel treatment and Adper Scotchbond Multi-Purpose Adhesive). For surface roughness measurements, the phosphoric acid conditioner of the SBP etch-and-rinse system was rinsed from the surface with an air-water spray, and the other four self-etch adhesive agents were removed with alternating rinses of water and acetone. A Proscan 2000 non-contact profilometer was used to determine Ra values. Composite (Z100) to enamel bond strengths (24 hours) were determined using Ultradent fixtures and they were debonded with a crosshead speed of 1 mm/minute. The data were analyzed with ANOVA and Fisher's LSD post-hoc test. The etch-and- rinse system (SBP) produced the highest Ra (microm) and SBS (MPa) using both the recommended treatment time (0.352 +/- 0.028 microm and 40.5 +/- 6.1 MPa) and the extended treatment time (0.733 +/- 0.122 microm and 44.2 +/- 8.2 MPa). The Ra and SBS of the etch-and-rinse system were significantly greater (p < 0.05) than all the self-etch systems and controls. Increasing the treatment time with phosphoric acid (SBP) and PLP produced greater surface roughness (p < 0.05) but did not result in significantly higher bond strengths (p > 0.05). PMID:19363978

  9. SURFACE TREATMENT OF METALLIC URANIUM

    DOEpatents

    Gray, A.G.; Schweikher, E.W.

    1958-05-27

    The treatment of metallic uranium to provide a surface to which adherent electroplates can be applied is described. Metallic uranium is subjected to an etchant treatment in aqueous concentrated hydrochloric acid, and the etched metal is then treated to dissolve the resulting black oxide and/or chloride film without destroying the etched metal surface. The oxide or chloride removal is effected by means of moderately concentrated nitric acid in 3 to 20 seconds.

  10. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

    NASA Astrophysics Data System (ADS)

    Qiu, Rongfu; Lu, Hai; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2011-01-01

    Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.

  11. Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

    NASA Astrophysics Data System (ADS)

    Yokoyama, Meiso; Li, Jiin; Su, Shui; Su, Yan

    1994-12-01

    Indium-tin oxide (ITO) films coated on glass have been etched by reactive ion etching (RIE) with a gas mixture of Ar and Cl2. The etching rates of ITO films depend strongly on power density, gas pressure, the composition of reactive gases, and the total flow rate of etchants. According to the results from the study, we can postulate that the ITO films' etching follows the ion-assisted chemical etching. A high etching rate above 100 Å/min can be achieved, and an etching mechanism will be proposed. The selectivity of ITO films to glass reaches 35 with a 30 line/mm pattern. After exposure of ITO films to an Ar/Cl2 mixed gas plasma discharge, their sheet resistance does not markedly change. The residue of Cl atoms exists only in the region near the surface. By means of parameter control, we can obtain good pattern images of ITO films measured by scanning electron microscopy (SEM).

  12. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    SciTech Connect

    Hansen, T. A. R.; Weber, J. W.; Colsters, P. G. J.; Mestrom, D. M. H. G.; Sanden, M. C. M. van de; Engeln, R.

    2012-07-01

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  13. Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask

    PubMed Central

    2014-01-01

    A new fabrication method is proposed to produce nanostructures on monocrystalline silicon based on the friction-induced selective etching of its Si3N4 mask. With low-pressure chemical vapor deposition (LPCVD) Si3N4 film as etching mask on Si(100) surface, the fabrication can be realized by nanoscratching on the Si3N4 mask and post-etching in hydrofluoric acid (HF) and potassium hydroxide (KOH) solution in sequence. Scanning Auger nanoprobe analysis indicated that the HF solution could selectively etch the scratched Si3N4 mask and then provide the gap for post-etching of silicon substrate in KOH solution. Experimental results suggested that the fabrication depth increased with the increase of the scratching load or KOH etching period. Because of the excellent masking ability of the Si3N4 film, the maximum fabrication depth of nanostructure on silicon can reach several microns. Compared to the traditional friction-induced selective etching technique, the present method can fabricate structures with lesser damage and deeper depths. Since the proposed method has been demonstrated to be a less destructive and flexible way to fabricate a large-area texture structure, it will provide new opportunities for Si-based nanofabrication. PMID:24940174

  14. Ultradeep fused silica glass etching with an HF-resistant photosensitive resist for optical imaging applications

    NASA Astrophysics Data System (ADS)

    Nagarah, John M.; Wagenaar, Daniel A.

    2012-03-01

    Microfluidic and optical sensing platforms are commonly fabricated in glass and fused silica (quartz) because of their optical transparency and chemical inertness. Hydrofluoric acid (HF) solutions are the etching media of choice for deep etching into silicon dioxide substrates, but processing schemes become complicated and expensive for etching times greater than 1 h due to the aggressiveness of HF migration through most masking materials. We present here etching into fused silica more than 600 µm deep while keeping the substrate free of pits and maintaining a polished etched surface suitable for biological imaging. We utilize an HF-resistant photosensitive resist (HFPR) which is not attacked in 49% HF solution. Etching characteristics are compared for substrates masked with the HFPR alone and the HFPR patterned on top of Cr/Au and polysilicon masks. We used this etching process to fabricate suspended fused silica membranes, 8-16 µm thick, and show that imaging through the membranes does not negatively affect image quality of fluorescence microscopy of biological tissue. Finally, we realize small through-pore arrays in the suspended membranes. Such devices will have applications in planar electrophysiology platforms, especially where optical imaging is required.

  15. In-office technique for selectively etching titanium abutments to improve bonding for interim implant prostheses.

    PubMed

    Wadhwani, Chandur; Chung, Kwok-Hung

    2016-03-01

    A technique is described for increasing the surface area of a titanium abutment with hydrofluoric acid etching. This provides mechanical retention for acrylic resin and composite resins and can be easily and rapidly accomplished in both the laboratory and clinic. PMID:26553255

  16. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  17. Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas

    NASA Astrophysics Data System (ADS)

    Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu

    2014-01-01

    The etching-limiting step in slow Si etching with HCl/H2 at atmospheric pressure was investigated. The etching was performed at a low etching rate below 10 nm/min in the temperature range of 1000-1100 °C. In the case of bare Si etching, it was confirmed that the etching rate showed little temperature dependence and was proportional to the equilibrium pressure of the etching by-product SiCl2 calculated by thermochemical analysis. In addition, the etching rates of Si(100) and (110) faces were almost the same. These results indicate that SiCl2 diffusion in the gas phase is the rate-limiting step. In the etching of the Si surface with SiO2 mask patterns, a strong loading effect (mask/opening pattern dependence of the etching rate) was observed. The simulation of the diffusion of gas species immediately above the Si surface revealed that the loading effect was attributed to the pattern-dependent diffusion of SiCl2.

  18. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  19. Quick-freeze, deep-etch visualization of the cytoskeleton beneath surface differentiations of intestinal epithelial cells.

    PubMed

    Hirokawa, N; Heuser, J E

    1981-11-01

    The cytoskeleton that supports microvilli in intestinal epithelial cells was visualized by the quick-freeze, deep-etch, rotary-replication technique (Heuser and Salpeter. 1979. J. Cell Biol. 82: 150). Before quick freezing, cells were exposed to detergents or broken open physically to clear away the granular material in their cytoplasm that would otherwise obscure the view. After such extraction, cells still displayed a characteristic organization of cytoskeletal filaments in their interiors. Platinum replicas of these cytoskeletons had sufficient resolution to allow us to identify the filament types present, and to determine their characteristic patterns of interaction. The most important new finding was that the apical "terminal web" in these cells, which supports the microvilli via their core bundles of actin filaments, does not itself contain very much actin but instead is comprised largely of narrow strands that interconnect adjacent actin bundles with one another and with the underlying base of intermediate filaments. These strands are slightly thinner than actin, do not display actin's 53A periodicity, and do not decorate with myosin subfragment S1. On the contrary, two lines of evidence suggested that these strands, could include myosin molecules. First, other investigators have shown that myosin is present in the terminal web (Mooseker et al. 1978. J. Cell Biol. 79: 444-453), yet we could find no thick filaments in this area. Second, we found that the strands were removed completely in the process of decorating the core filament bundles with the myosin subfragment S1, suggesting that they had been competitively displaced by exogenous myosin. We conclude that myosin may play a structural role in these cells, via its cross-linking distribution, in addition to whatever role it plays in microvillar motility. PMID:7198124

  20. Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer.

    PubMed

    Kim, Hwa-Min; Litao, Yao; Kim, Bonghwan

    2015-11-01

    We have developed a surface texturing process for pyramidal surface features along with an indium tin oxide (ITO) coating process to fabricate super-hydrophilic conductive surfaces. The contact angle of a water droplet was less than 5 degrees, which means that an extremely high wettability is achievable on super-hydrophilic surfaces. We have also fabricated a super-hydrophobic conductive surface using an additional coating of polytetrafluoroethylene (PTFE) on the ITO layer coated on the textured Si surface; the ITO and PTFE films were deposited by using a conventional sputtering method. We found that a super-hydrophilic conductive surface is produced by ITO coated on the pyramidal Si surface (ITO/Si), with contact angles of approximately 0 degrees and a resistivity of 3 x 10(-4) Ω x cm. These values are highly dependent on the substrate temperature during the sputtering process. We also found that the super-hydrophobic conductive surface produced by the additional coating of PTFE on the pyramidal Si surface with an ITO layer (PTFE/ITO/Si) has a contact angle of almost 160 degrees and a resistivity of 3 x 10(-4) Ω x cm, with a reflectance lower than 9%. Therefore, these processes can be used to fabricate multifunctional features of ITO films for switchable super-hydrophilic and super-hydrophobic surfaces. PMID:26726545

  1. Corrosion damage of the surface of high-speed tool steel in acid-inhibitor pickling

    SciTech Connect

    Mindyuk, A.K.; Sholok, V.I.; Shvets, V.V. Gural', V.M.

    1988-01-01

    Profilograms were recorded of the surface of 20-mm-diameter 1.5-mm-thick specimens prepared from hardened and tempered R6M5 high-speed tool steel (62 HRC) and also of similar specimens subjected to the action of pure hydrochloric acid etching solution and of the same solutions with additions of KhOSP-10, KhOSP-10D, and urotropin inhibitors at 30, 60, and 90/sup 0/C for 4.0, 2.0, and 0.5 h, respectively. The analysis of corrosion damage and determination of the surface finish of the steel made it possible to develop the optimum method of acid-inhibitor pickling specifying the addition to the acid of 1.5 g/liter KhOSP-10 inhibitor and a temperature of 30/sup 0/C. This suppressed the corrosion rate, hydrogen impregnation and embrittlement, decarburization of the steel, and sensitivity to crack formation, and reduced the number of scrapped parts.

  2. Dye Indicators for Acidic or Basic Surface Contamination

    NASA Technical Reports Server (NTRS)

    Lakin, A.; Schuler, F.

    1984-01-01

    Application of pH-sensitive dye solution serves as test for acidic or basic contamination of critical bonding surface. Aqueous solution of 0.1 percent Direct Red No. 28 capable of indicating acid activating solution down to 10 parts per million on hardware and tooling. Dye did not cause detectable contamination of surface.

  3. Surface-active properties of humic and sulfochlorohumic acids

    SciTech Connect

    Ryabova, I.N.; Mustafina, G.A.; Akkulova, Z.G.; Satymbaeva, A.S.

    2009-10-15

    The surface tension of alkaline solutions of humic acids and their sulfochloroderivatives, which are synthesized by sulfonation of chlorohumic acids isolated from coal chlorinated by the electrochemical method, is investigated. It is established that humic compounds possess weak surface activity. Basic adsorption parameters are calculated.

  4. Method for surface treatment of a cadmium zinc telluride crystal

    DOEpatents

    James, Ralph; Burger, Arnold; Chen, Kuo-Tong; Chang, Henry

    1999-01-01

    A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface.

  5. Method for surface treatment of a cadmium zinc telluride crystal

    DOEpatents

    James, R.; Burger, A.; Chen, K.T.; Chang, H.

    1999-08-03

    A method for treatment of the surface of a CdZnTe (CZT) crystal is disclosed that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface. 3 figs.

  6. Increased light extraction efficiency from top-emitting organic light-emitting diodes employing a mask-free plasma-etched stochastic polymer surface

    NASA Astrophysics Data System (ADS)

    Park, Woo-Young; Kwon, Yongwon; Cheong, Hee-Woon; Lee, Changhee; Whang, Ki-Woong

    2016-03-01

    Top-emitting organic light-emitting diodes (TEOLEDs) are drawing interest as future devices for both high-quality display and lighting. However, the current TEOLEDs have external quantum efficiencies of approximately 20%, which still need improvement. To attain high device efficiencies in TEOLEDs, waveguide and surface plasmon polariton modes should be minimised. Many efforts have been made using nano- or micrometre-scale periodic gratings to extract the confined photons. However, significant angular distortion or colour shifts occur as the Bragg condition calls for. Here, an effective method is demonstrated for enhancing the light extraction efficiency from TEOLEDs employing a mask-free plasma-etched polymer surface with stochastically distributed nano-hemispheres. TEOLEDs with the stochastic polymer surface allowed us to achieve a device efficiency enhancement up to 1.55-fold relative to conventional devices without introducing spectral changes and angular emission distortion, unlike periodic grating-embedded devices. Because of the independence of the improvement from the particular emission wavelengths, the proposed TEOLEDs are attractive and practical for use in full colour and white lighting as well as display applications.

  7. LDRD final report : on the development of hybrid level-set/particle methods for modeling surface evolution during feature-scale etching and deposition processes.

    SciTech Connect

    McBride, Cory L.; Schmidt, Rodney Cannon; Musson, Lawrence Cale

    2005-01-01

    Two methods for creating a hybrid level-set (LS)/particle method for modeling surface evolution during feature-scale etching and deposition processes are developed and tested. The first method supplements the LS method by introducing Lagrangian marker points in regions of high curvature. Once both the particle set and the LS function are advanced in time, minimization of certain objective functions adjusts the LS function so that its zero contour is in closer alignment with the particle locations. It was found that the objective-minimization problem was unexpectedly difficult to solve, and even when a solution could be found, the acquisition of it proved more costly than simply expanding the basis set of the LS function. The second method explored is a novel explicit marker-particle method that we have named the grid point particle (GPP) approach. Although not a LS method, the GPP approach has strong procedural similarities to certain aspects of the LS approach. A key aspect of the method is a surface rediscretization procedure--applied at each time step and based on a global background mesh--that maintains a representation of the surface while naturally adding and subtracting surface discretization points as the surface evolves in time. This method was coded in 2-D, and tested on a variety of surface evolution problems by using it in the ChISELS computer code. Results shown for 2-D problems illustrate the effectiveness of the method and highlight some notable advantages in accuracy over the LS method. Generalizing the method to 3D is discussed but not implemented.

  8. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  9. Surface properties of superfine alumina trihydrate after surface modification with stearic acid

    NASA Astrophysics Data System (ADS)

    Liu, Gui-hua; Zhou, Bo-hao; Li, Yun-feng; Qi, Tian-gui; Li, Xiao-bin

    2015-05-01

    The surface properties of superfine alumina trihydrate (ATH) after surface modification were studied by measuring the contact angle, active ratio, oil adsorption, total organic carbon, adsorption ratio, and Fourier transform infrared (FTIR) spectrum. The contact angle increased initially and then slowly decreased with an increase of the amount of stearic acid. However, the surface free energy decreased initially and then increased. Surface modification with stearic acid or sodium stearate can benefit from elevating temperature. The base surface tension component and the free energy of Lewis acid-base both declined sharply following the surface modification. Excess stearic acid was physically adsorbed in the form of multilayer adsorption, and an interaction between oxygen on the ATH surface and hydroxyl in stearic acid was subsequently determined. Our results further indicated that the contact angle and adsorption ratio can be used as control indicators for surface modification compared with active ratio, oil adsorption and total organic carbon.

  10. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    PubMed

    Uşümez, Serdar; Orhan, Metin; Uşümez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful

  11. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  12. Arachidonic acid and prostaglandin E2 influence human osteoblast (MG63) response to titanium surface roughness.

    PubMed

    Dean, David D; Campbell, Casey M; Gruwell, Scott F; Tindall, John W M; Chuang, Hui-Hsiu; Zhong, Weinan; Schmitz, John P; Sylvia, Victor L

    2008-01-01

    Prior studies have shown that implant surface roughness affects osteoblast proliferation, differentiation, matrix synthesis, and local factor production. Further, cell response is modulated by systemic factors, such as 1,25(OH)2D3 and estrogen as well as mechanical forces. Based on the fact that peri-implant bone healing occurs in a site containing elevated amounts of prostaglandin E2 (PGE2), the hypothesis of the current study is that PGE2 and arachidonic acid (AA), the substrate used by cyclooxygenase to form PGE2, influence osteoblast response to implant surface roughness. To test this hypothesis, 4 different types of commercially pure titanium (cpTi) disks with surfaces of varying roughness (smooth Ti, R(a) 0.30 microm; smooth and acid etched Ti [SAE Ti], R(a) 0.40 microm; rough Ti, R(a) 4.3 microm; rough and acid etched Ti [RAE Ti], R(a) 4.15 (microm) were prepared. MG63 osteoblasts were seeded onto the surfaces, cultured to confluence, and then treated for the last 24 hours of culture with AA (0, 0.1, 1, and 10 nM), PGE2 (0, 1, 10, 25, and 100 nM), or the general cyclooxygenase inhibitor indomethacin (0 or 100 nM). At harvest, the effect of treatment on cell proliferation was assessed by measuring cell number and [3H]-thymidine incorporation, and the effect on cell differentiation was determined by measuring alkaline phosphatase (ALP) specific activity. The effect of AA and PGE2 on cell number was somewhat variable but showed a general decrease on plastic and smooth surfaces and an increase on rough surfaces. In contrast, [3H]-thymidine incorporation was uniformly decreased with treatment on all surfaces. ALP demonstrated the most prominent effect of treatment. On smooth surfaces, AA and PGE2 dose-dependently increased ALP, while on rough surfaces, treatment dose-dependently decreased enzyme specific activity. Indomethacin treatment had either no effect or a slightly inhibitory effect on [3H]-thymidine incorporation on all surfaces. In contrast, indomethacin

  13. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa

    NASA Astrophysics Data System (ADS)

    Della Casa, Pietro; Maaßdorf, Andre; Zeimer, Ute; Weyers, Markus

    2016-01-01

    In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching of epitaxially-grown GaAs leads to the development of etch pits on the surface, corresponding to the emerging points of threading dislocations. Addition of trimethylgallium (TMGa) leads to a linear superposition of growth and etching. Trimethylaluminium (TMAl) added in moderate quantity enhances the etch rate and inhibits the development of etch pits. A model description for the enhanced etch rate is presented.

  14. Molecular controls on kaolinite surface charge and organic acid adsorption

    SciTech Connect

    Brady, P.V.; Cygan, R.T.; Nagy, K.L.; Ward, D.B.

    1996-10-01

    pH-dependent multi-site kaolinite surface charge can be explained by proton donor-acceptor reactions occurring simultaneously on Si and Al sites exposed on edge sites. Si site acidity at the kaolinite-solution interface differs minimally from that of pure SiO{sub 2}, whereas Al sites became appreciably more acidic when a part of the kaolinite matrix. Independent evidence from scanning force microscopy points to a higher percentage of edge surface area due to thicker particles and basal surface steps than previously assumed. Molecular modeling of the proton-relaxed kaolinite structure has been used to establish the elevated acidity of edge Al sites, to independently confirm the crystallochemical controls on surface acidity, and to establish likely bonding geometries for adsorbed organic acids, such as oxalate.

  15. Etching reaction of methylchloride molecule on the GaAs (0 0 1)-2 × 4 surface

    NASA Astrophysics Data System (ADS)

    Ozeki, M.; Iwasa, Y.; Shimizu, Y.

    2007-04-01

    Adsorption process of methylchloride (CH 3Cl) on the GaAs (0 0 1)-2 × 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2 × 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH 3Cl with a kinetic energy of 0.06 eV. New bright spots appeared on the CH 3Cl exposed surface. They were largely observed at the "B-type" step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH 3Cl molecules without any dissociation. The adsorption mechanism of CH 3Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well.

  16. Fabrication of hard-coated optical absorbers with microstructured surfaces using etched ion tracks: Toward broadband ultra-low reflectance

    NASA Astrophysics Data System (ADS)

    Amemiya, Kuniaki; Koshikawa, Hiroshi; Yamaki, Tetsuya; Maekawa, Yasunari; Shitomi, Hiroshi; Numata, Takayuki; Kinoshita, Kenichi; Tanabe, Minoru; Fukuda, Daiji

    2015-08-01

    Broadband low reflectance materials have various applications in the field of optical energy management; however, materials with ultra-low reflectance (below 0.1%) have been considered as mechanically delicate. We have developed a novel hard-surface optical absorber with microstructured, diamond-like carbon coated ion tracks on CR-39 plastic substrate. The spectral reflectance of the first prototype was below 2% for wavelengths ranging from 400 nm to 1400 nm; moreover, the optical absorber had mechanically hard surface and exhibited temporal durability. Choosing the appropriate design of the surface structure and coating layer is likely to reduce the reflectance to the order of 0.1%. This technique yields easy-to-handle broadband ultra-low reflectance absorbers.

  17. Time-varying wetting behavior on copper wafer treated by wet-etching

    NASA Astrophysics Data System (ADS)

    Tu, Sheng-Hung; Wu, Chuan-Chang; Wu, Hsing-Chen; Cheng, Shao-Liang; Sheng, Yu-Jane; Tsao, Heng-Kwong

    2015-06-01

    The wet cleaning process in semiconductor fabrication often involves the immersion of the copper wafer into etching solutions and thereby its surface properties are significantly altered. The wetting behavior of a copper film deposited on silicon wafer is investigated after a short dip in various etching solutions. The etchants include glacial acetic acid and dilute solutions of nitric acid, hydrofluoric acid, and tetramethylammonium hydroxide. It was found that in most cases a thin oxide layer still remains on the surface of as-received Cu wafers when they are subject to etching treatments. However, a pure Cu wafer can be obtained by the glacial acetic acid treatment and its water contact angle (CA) is about 45°. As the pure Cu wafer is placed in the ambient condition, the oxide thickness grows rapidly to the range of 10-20 Å within 3 h and the CA on the hydrophilic surface also rises. In the vacuum, it is surprising to find that the CA and surface roughness of the pure Cu wafer can grow significantly. These interesting results may be attributed to the rearrangement of surface Cu atoms to reduce the surface free energy.

  18. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    NASA Astrophysics Data System (ADS)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  19. INFLUENCE OF AQUEOUS ALUMINUM AND ORGANIC ACIDS ON MEASUREMENT OF ACID NEUTRALIZING CAPACITY IN SURFACE WATERS

    EPA Science Inventory

    Acid neutralizing capacity (ANC) is used to quantify the acid-base status of surface waters. Acidic waters have bean defined as having ANC values less than zero, and acidification is often quantified by decreases in ANC. Measured and calculated values of ANC generally agree, exce...

  20. Analysis methods for meso- and macroporous silicon etching baths

    PubMed Central

    2012-01-01

    Analysis methods for electrochemical etching baths consisting of various concentrations of hydrofluoric acid (HF) and an additional organic surface wetting agent are presented. These electrolytes are used for the formation of meso- and macroporous silicon. Monitoring the etching bath composition requires at least one method each for the determination of the HF concentration and the organic content of the bath. However, it is a precondition that the analysis equipment withstands the aggressive HF. Titration and a fluoride ion-selective electrode are used for the determination of the HF and a cuvette test method for the analysis of the organic content, respectively. The most suitable analysis method is identified depending on the components in the electrolyte with the focus on capability of resistance against the aggressive HF. PMID:22805742

  1. Reactive Ion Etching for Randomly Distributed Texturing of Multicrystalline Silicon Solar Cells

    SciTech Connect

    ZAIDI, SALEEM H

    2002-05-01

    The quality of low-cost multicrystalline silicon (mc-Si) has improved to the point that it forms approximately 50% of the worldwide photovoltaic (PV) power production. The performance of commercial mc-Si solar cells still lags behind c-Si due in part to the inability to texture it effectively and inexpensively. Surface texturing of mc-Si has been an active field of research. Several techniques including anodic etching [1], wet acidic etching [2], lithographic patterning [3], and mechanical texturing [4] have been investigated with varying degrees of success. To date, a cost-effective technique has not emerged.

  2. Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrate

    NASA Astrophysics Data System (ADS)

    Kang, Min Gu; Tark, S.; Lee, Jeong Chul; Son, Chang-Sik; Kim, Donghwan

    2011-07-01

    When amorphous silicon thin film is deposited on n-type c-Si substrate, partial epi-layer of silicon grows mainly on the valley of the pyramid where two (1 1 1) planes meet. The epi-layer degrades a-Si/c-Si interface properties. This is the main cause which leads to a decrease in the efficiency of silicon heterojunction solar cells. In this study, we made various texture shapes of silicon substrate for heterojunction solar cells with n-type silicon wafers. Four different types of textures on silicon heterojunction were prepared: large textured, smoothened large textured, small textured, and smoothened small textured. Surface texturing is well known as one of the major paths to improving the efficiency of silicon solar cells by increasing the short-circuit current through effective photon trapping. The results were successful for silicon random texturing using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) solutions. Silicon heterojunction solar cells were fabricated on textured substrates, indicating the feasibility of KOH and TMAH texturing for solar cell fabrication. We obtained images of the surface morphology using a scanning electron microscope. The interface cross-section was taken using a transmission electron microscope. We gained the optimized surface morphology of silicon substrate for a-Si/c-Si interface in silicon heterojunction solar cells.

  3. The Materials Chemistry of Atomic Oxygen with Applications to Anisotropic Etching of Submicron Structures in Microelectronics and the Surface Chemistry Engineering of Porous Solids

    NASA Technical Reports Server (NTRS)

    Koontz, Steve L.; Leger, Lubert J.; Wu, Corina; Cross, Jon B.; Jurgensen, Charles W.

    1994-01-01

    Neutral atomic oxygen is the most abundant component of the ionospheric plasma in the low Earth orbit environment (LEO; 200 to 700 kilometers altitude) and can produce significant degradation of some spacecraft materials. In order to produce a more complete understanding of the materials chemistry of atomic oxygen, the chemistry and physics of O-atom interactions with materials were determined in three radically different environments: (1) The Space Shuttle cargo bay in low Earth orbit (the EOIM-3 space flight experiment), (2) a high-velocity neutral atom beam system (HVAB) at Los Alamos National Laboratory (LANL), and (3) a microwave-plasma flowing-discharge system at JSC. The Space Shuttle and the high velocity atom beam systems produce atom-surface collision energies ranging from 0.1 to 7 eV (hyperthermal atoms) under high-vacuum conditions, while the flowing discharge system produces a 0.065 eV surface collision energy at a total pressure of 2 Torr. Data obtained in the three different O-atom environments referred to above show that the rate of O-atom reaction with polymeric materials is strongly dependent on atom kinetic energy, obeying a reactive scattering law which suggests that atom kinetic energy is directly available for overcoming activation barriers in the reaction. General relationships between polymer reactivity with O atoms and polymer composition and molecular structure have been determined. In addition, vacuum ultraviolet photochemical effects have been shown to dominate the reaction of O atoms with fluorocarbon polymers. Finally, studies of the materials chemistry of O atoms have produced results which may be of interest to technologists outside the aerospace industry. Atomic oxygen 'spin-off' or 'dual use' technologies in the areas of anisotropic etching in microelectronic materials and device processing, as well as surface chemistry engineering of porous solid materials are described.

  4. Stereology of backscatter electron images of etched surfaces for characterization of particle size distributions and volume fractions: Estimation of imaging bias via Monte Carlo simulations

    SciTech Connect

    Payton, E.J. Mills, M.J.

    2011-06-15

    On metallic specimens in which a secondary phase has been selectively removed by a chemical etchant, the use of backscatter electron (BSE) imaging yields images that are more readily segmented with image processing algorithms than other modes of imaging in the scanning electron microscope. The contrast mechanisms in this imaging mode, however, produce a bias in the observation of particle sizes and volume fractions due to the effects of the electron interaction volume in the specimen. This stereological bias is quantified using Monte Carlo (MC) simulation of backscatter images. It is observed that the overprojection of features with centroids residing beneath the plane of polish is largely canceled out by the reduced segmentation size of features with centroids residing above the plane of polish. - Research Highlights: {yields} Backscatter imaging of selectively-etched surfaces can facilitate segmentation. {yields} Backscatter imaging of voids is simulated to estimate imaging/observation biases. {yields} The biases are quantified and incorporated into the stereological calculation. {yields} Systematic errors and imaging biases are observed to counteract one another. {yields} Results are illustrated using a bimodal gamma prime distribution in a Ni superalloy.

  5. Factors affecting response of surface waters to acidic deposition

    SciTech Connect

    Turner, R.S.; Johnson, D.W.; Elwood, J.W.; Van Winkle, W.; Clapp, R.B.; Reuss, J.O.

    1986-04-01

    Knowledge of watershed hydrology and of the biogeochemical reactions and elemental pools and fluxes occurring in watersheds can be used to classify the response of watersheds and surface waters to acidic deposition. A conceptual mosel is presented for classifying watersheds into those for which (1) surface water chemistry will change rapidly with deposition quality (direct response) (2) surface water chemistry will change only slowly over time (delayed response), and (3) surface water chemistry will not change significantly, even with continued acidic deposition (capacity-protected). Techniques and data available for classification of all watersheds in a region into these categories are discussed.

  6. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  7. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  8. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  9. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  10. TMAH wet etching of silicon micro- and nano-fins for selective sidewall epitaxy of III-Nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Liu, Lianci; Myasishchev, Denis; Kuryatkov, Vladimir; Nikishin, Sergey; Holtz, Mark; Harris, Rusty

    2011-10-01

    We describe formation of silicon micro- and nano-fins, with (111)-plane sidewall facets, for selective sidewall epitaxy of III-Nitride semiconductors. The fins are produced by wet etching (110)-oriented silicon wafers. Silicon dioxide is deposited using plasma enhanced chemical vapor deposition for producing a hard mask. The silicon dioxide is patterned using photo- and electron-beam lithography for micro- and nano-fins, respectively, followed by wet etching in hydrofluoric acid. Wet etching to produce the silicon fins is carried out using tetramethyl ammonium hydroxide (TMAH) diluted with isopropyl alcohol (IPA). Atomic force microscopy and scanning electron microscopy are used to determine morphology including the surface roughness of the area between fins and the etching rate of silicon. We tune the etching time, temperature, and percentage of IPA in order to get the best surface on both (111) and (110) planes. Adding IPA is found to alter the etch rate and improve the surface between the fins without adversely affecting the sidewall morphology.

  11. Etching characteristics of LiNbO{sub 3} in reactive ion etching and inductively coupled plasma

    SciTech Connect

    Ren, Z.; Yu, S.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.

    2008-02-01

    The etching characteristics of congruent LiNbO{sub 3} single crystals including doped LiNbO{sub 3} and proton-changed LiNbO{sub 3} have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO{sub 3} have been fabricated and optically measured.

  12. Oxalic acid adsorption states on the clean Cu(110) surface

    NASA Astrophysics Data System (ADS)

    Fortuna, Sara

    2016-11-01

    Carboxylic acids are known to assume a variety of configurations on metallic surfaces. In particular oxalic acid on the Cu(110) surface has been proposed to assume a number of upright configurations. Here we explore with DFT calculations the possible structures that oxalic acid can form on copper 110 at different protonation states, with particular attention at the possibility of forming structures composed of vertically standing molecules. In its fully protonated form it is capable of anchoring itself on the surface thanks to one of its hydrogen-free oxygens. We show the monodeprotonated upright molecule with two oxygens anchoring it on the surface to be the lowest energy conformation of a single oxalic molecules on the Cu(110) surface. We further show that it is possible for this configuration to form dense hexagonally arranged patterns in the unlikely scenario in which adatoms are not involved.

  13. Chemically Etched Open Tubular and Monolithic Emitters for Nanoelectrospray Ionization Mass Spectrometry

    SciTech Connect

    Kelly, Ryan T.; Page, Jason S.; Luo, Quanzhou; Moore, Ronald J.; Orton, Daniel J.; Tang, Keqi; Smith, Richard D.

    2006-11-15

    We have developed a new procedure for fabricating fused silica emitters for electrospray ionization-mass spectrometry (ESI-MS) in which the end of a bare fused silica capillary is immersed into aqueous hydrofluoric acid, and water is pumped through the capillary to prevent etching of the interior. Surface tension causes the etchant to climb the capillary exterior, and the etch rate in the resulting meniscus decreases as a function of distance from the bulk solution. Etching continues until the silica touching the hydrofluoric acid reservoir is completely removed, essentially stopping the etch process. The resulting emitters have no internal taper, making them much less prone to clogging compared to e.g. pulled emitters. The high aspect ratios and extremely thin walls at the orifice facilitate very low flow rate operation; stable ESI-MS signals were obtained for model analytes from 5-μm-diameter emitters at a flow rate of 5 nL/min with a high degree of inter-emitter reproducibility. In extensive evaluation, the etched emitters were found to enable approximately four times as many LC-MS analyses of proteomic samples before failing compared with conventional pulled emitters. The fabrication procedure was also employed to taper the ends of polymer monolith-containing silica capillaries for use as ESI emitters. In contrast to previous work, the monolithic material protrudes beyond the fused silica capillaries, improving the monolith-assisted electrospray process.

  14. Electrochemical etching of a shape memory alloy using new electrolyte solutions

    NASA Astrophysics Data System (ADS)

    Mineta, Takashi

    2004-01-01

    In this paper we present the electrochemical etching characteristics of a shape memory alloy (SMA) using new electrolytes of inorganic salt in alcohol, in comparison with conventional H2SO4-methanol solution. It has become apparent that pattern etching of SMA sheets can be carried out in electrolyte solutions using LiCl and NH4Cl. Especially, in the case of 1 mol l-1 LiCl-ethanol, good etching properties such as a controllable low etch rate of about 3.5 µm min-1, high etch factor (etching depth/side etching width) of 1.5, uniform etching depth and smooth etched surface can be obtained. Throughout etching can be carried out by using a back-side dummy metal of Ni or Cu. This etching technique has been applied to the micromachining of SMA sheet for fabrication of microactuators.

  15. Thermodynamic and kinetic aspects of surface acidity. Progress report

    SciTech Connect

    Dumesic, J.A.

    1992-04-01

    Our research in the general area of acid catalysis involves the characterization of solid acidity and the corresponding assessment of catalytic performance of acidic materials. Acid characterization studies are required to provide essential information about the type of acid site (i.e., Lewis versus Bronsted), the strength of the sites, and the mobility of molecules adsorbed on the acid sites. An accurate measure of acid strength is given by the heat of adsorption of a basic probe molecule on the acid site. A thermodynamic representation of the mobility of adsorbed species on these sites is given by the entropy of adsorption. Important techniques used in these acid site characterization studies include microcalorimetry, thermogravimetric measurements, temperature programmed desorption, infrared spectroscopy and solid state nuclear magnetic resonance. The combination of these acid site characterization studies with reaction kinetics measurements of selected catalytic processes allows the elucidation of possible relationships between surface thermodynamic and kinetic properties of acidic sites. Such relationships are important milestones in formulating effective strategies for the effective utilization of solid acid catalysts. Current work in this direction involves methylamine syntheses over various zeolites, and the basic probe molecules employed include ammonia, methanol, water and mono-, di- and tri-methylamines. 31 refs., 18 figs., 1 tab.

  16. Effect of ceramic etching protocols on resin bond strength to a feldspar ceramic.

    PubMed

    Bottino, M A; Snellaert, A; Bergoli, C D; Özcan, M; Bottino, M C; Valandro, L F

    2015-01-01

    This study sought to evaluate the resin microtensile bond strength (MTBS) stability of a leucite-reinforced ceramic after different ceramic etching protocols. The microtensile test had 40 ceramic blocks (5×5×6 mm) assigned to five groups (n=8), in accordance with the following surface etching protocols: NE nonetched (control); 9HF: hydrofluoric (HF) acid etching (9%HF)+wash/dry; 4HF: 4%HF+wash/dry; 5HF: 5%HF+wash/dry; and 5HF+N: 5%HF+neutralizer+wash/dry+ultrasonic-cleaning. Etched ceramic surfaces were treated with a silane agent. Next, resin cement blocks were built on the prepared ceramic surface and stored for 24 hours in distilled water at 37°C. The specimens were then sectioned to obtain microtensile beams (32/block), which were randomly assigned to the following conditions, nonaged (immediate test) and aged (water storage for 150 days plus 12,000 thermal cycles), before the microtensile test. Bond strength data were submitted to one-way analysis of variance and Tukey test (α=0.05). Additional ceramic samples were subjected to the different ceramic etching protocols and evaluated using a scanning electron microscope (n=2) and atomic force microscopy (n=2). Aging led to a statistically significant decrease in the MTBS for all groups, except the untreated one (NE). Among the groups submitted to the same aging conditions, the untreated (NE) revealed inferior MTBS values compared to the 9HF and 4HF groups. The 5HF and 5HF+N groups had intermediate mean values, being statistically similar to the higher values presented by the 9HF and 4HF groups and to the lower value associated with the NE group. The neutralization procedure did not enhance the ceramic/resin cement bond strength. HF acid etching is a crucial step in resin/ceramic bonding. PMID:25535782

  17. Ion-Assisted Plasma Etching

    NASA Astrophysics Data System (ADS)

    Wang, C. Daniel; Abraham-Shrauner, Barbara

    1996-11-01

    We analyze plasma etching of two-dimensional, long trenches where directed ions modeled by drifted Maxwellian distribution functions and isotropic neutral molecules contribute to the etch rate. Analytic expressions for the etch rates enable the user to plot the etch profiles by using standard computer packages for nonlinear first-order ordinary differential equations for the point and its slope. First, etch profiles are shown for ion-assisted etching where the thermal etching of the neutrals is enhanced by the ions. Second, we show etch profiles of a multiple layer device where one layer is n-type silicon (arsenic doped) that etches isotropically (G.S. Oehrlein, "Reactive Ion Etching," Handbook of Plasma Processing, Technology, Ed. S.M. Rossnagel, et al., Noyes Pub., NJ, 1990) The etch rates for the other layers are in the ion flux-limited regime. The lateral etching of the n-type silicon illustrates the necessity of sidewall passivation for this structure.

  18. Interactions of Gaseous Nitric Acid with Surfaces of Environmental Interest

    SciTech Connect

    Dubowski, Y; Sumner, Ann Louise; Menke, E J.; Gaspar, Dan J.; Newberg, J T.; Hoffman, Rachel C.; Penner, R M.; Hemminger, J C.; Finlayson-Pitts, Barbara J.

    2004-07-21

    Gaseous nitric acid removal by surfaces in experimental systems and in the atmospheric boundary layer is rapid. However, neither the form of HNO? on surfaces nor its impact on the properties of the thin surface film are known. We report here studies of surfaces that have been exposed at room temperature (295 ? 2 K) to gaseous mixtures of water vapor with HNO? at concentrations from 46 ppb to 4 x 10? ppm. The surfaces were probed using a combination of Fourier transform infrared spectrometry (FTIR), non-contact atomic force microscopy (AFM), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and X-ray photoelectron spectroscopy (XPS). Exposure of borosilicate glass, quartz, and thin Teflon films to mixtures of gaseous HNO? and water vapor leads to the subsequent uptake of much larger amounts of water than occurs on the corresponding unexposed surfaces. Infrared spectra show evidence for the formation of nitric acid?water complexes on the surface that leads to this enhanced water uptake. On borosilicate glass, exposure to the nitric acid?water vapor mixture results in surface segregation of the trace metal oxides and their nitrates formed from reaction with HNO?. The majority of these oxides can be removed by rinsing with water; however, smaller, segregated regions of ZnO remain on the surface. The implications for heterogeneous reactions in thin films on surfaces in laboratory systems and in the atmosphere are discussed.

  19. Galvanic etch stop for Si in KOH

    NASA Astrophysics Data System (ADS)

    Connolly, E. J.; French, P. J.; Xia, X. H.; Kelly, J. J.

    2004-08-01

    Etch stops and etch-stopping techniques are essential 'tools' for 2D and 3D MEMS devices. Until now, use of a galvanic etch stop (ES) for micromachining in alkaline solutions was usually prohibited due to the large Au:Si area needed and/or high oxygen content required to achieve the ES. We report a new galvanic ES which requires a Au:exposed silicon area ratio of only ~1. Thus for the first time a practical galvanic ES for KOH has been achieved. The ES works by adding small amounts of sodium hypochlorite, NaOCl, to KOH solutions. Essentially the NaOCl increases the oxygen content in the KOH etchant. The dependancy of the galvanic ES on KOH concentration and temperature is investigated. Also, we report on the effects of the added NaOCl on etch rates. SEM images are used to examine the galvanically etch-stopped membranes and their surface morphology. For 33% KOH solutions the galvanic etch stop worked well, producing membranes with uniform thickness ~6 µm (i.e. slightly greater than the deposited epilayer). For 20% KOH solutions, the galvanic etch stop still worked, but the resulting membranes were a little thicker (~10 µm).

  20. Distinguishing shocked from tectonically deformed quartz by the use of the SEM and chemical etching

    USGS Publications Warehouse

    Gratz, A.J.; Fisler, D.K.; Bohor, B.F.

    1996-01-01

    Multiple sets of crystallographically-oriented planar deformation features (PDFs) are generated by high-strain-rate shock waves at pressures of > 12 GPa in naturally shocked quartz samples. On surfaces, PDFs appear as narrow (50-500 nm) lamellae filled with amorphosed quartz (diaplectic glass) which can be etched with hydrofluoric acid or with hydrothermal alkaline solutions. In contrast, slow-strain-rate tectonic deformation pressure produces wider, semi-linear and widely spaced arrays of dislocation loops that are not glass filled. Etching samples with HF before examination in a scanning electron microscope (SEM) allows for unambiguous visual distinction between glass-filled PDFs and glass-free tectonic deformation arrays in quartz. This etching also reveals the internal 'pillaring' often characteristic of shock-induced PDFs. This technique is useful for easily distinguishing between shock and tectonic deformation in quartz, but does not replace optical techniques for characterizing the shock features.

  1. Surface reactions of iron - enriched smectites: adsorption and transformation of hydroxy fatty acids and phenolic acids

    NASA Astrophysics Data System (ADS)

    Polubesova, Tamara; Olshansky, Yaniv; Eldad, Shay; Chefetz, Benny

    2014-05-01

    Iron-enriched smectites play an important role in adsorption and transformation of soil organic components. Soil organo-clay complexes, and in particular humin contain hydroxy fatty acids, which are derived from plant biopolymer cutin. Phenolic acids belong to another major group of organic acids detected in soil. They participate in various soil processes, and are of concern due to their allelopathic activity. We studied the reactivity of iron-enriched smectites (Fe(III)-montmorillonite and nontronite) toward both groups of acids. We used fatty acids- 9(10),16-dihydroxypalmitic acid (diHPA), isolated from curtin, and 9,10,16-trihydroxypalmitic acid (triHPA); the following phenolic acids were used: ferulic, p-coumaric, syringic, and vanillic. Adsorption of both groups of acids was measured. The FTIR spectra of fatty acid-mineral complexes indicated inner-sphere complexation of fatty acids with iron-enriched smectites (versus outer-sphere complexation with Ca(II)-montmorillonite). The LC-MS results demonstrated enhanced esterification of fatty acids on the iron-enriched smectite surfaces (as compared to Ca(II)-montmorillonite). This study suggests that fatty acids can be esterified on the iron-enriched smectite surfaces, which results in the formation of stable organo-mineral complexes. These complexes may serve as a model for the study of natural soil organo-clay complexes and humin. The reaction of phenolic acids with Fe(III)-montmorillonite demonstrated their oxidative transformation by the mineral surfaces, which was affected by molecular structure of acids. The following order of their transformation was obtained: ferulic >syringic >p-coumaric >vanillic. The LC-MS analysis demonstrated the presence of dimers, trimers, and tetramers of ferulic acid on the surface of Fe(III)-montmorillonite. Oxidation and transformation of ferulic acid were more intense on the surface of Fe(III)-montmorillonite as compared to Fe(III) in solution due to stronger complexation on

  2. Texturing a pyramid-like structure on a silicon surface via the synergetic effect of copper and Fe(III) in hydrofluoric acid solution

    NASA Astrophysics Data System (ADS)

    Cao, Ming; Li, Shaoyuan; Deng, Jianxin; Li, Yuping; Ma, Wenhui; Zhou, Yang

    2016-05-01

    An innovative approach is proposed to texture a pyramid structure on a silicon surface via Cu-catalyzed chemical etching in the HF/FeCl3 system. The surface and cross-section morphologies of the formed pyramid structure were examined by scanning electron microscopy and atomic force microscopy. The results revealed that numerous silicon pyramid-like structures with hemlines of 0.1 ∼ 3 μm and height of 0.1 ∼ 2 μm are close together, and the top angle of the pyramid structure is 90°. Additionally, the systematic study of the effects of the etching time and the concentration of FeCl3 on the pyramid-like structures by the atom configuration model of silicon crystal faces demonstrated that the etching proceeds preferentially along the <1 0 0> directions of silicon. A formation mechanism of the pyramid-like structure is proposed. The results imply that the synergetic effect of Cu nanoparticles and Fe(III) could conveniently generate a pyramid-like architecture on the surface of silicon in hydrofluoric acid solution.

  3. Polymer etching in the oxygen afterglow - Increased etch rates with increased reactor loading

    NASA Technical Reports Server (NTRS)

    Lerner, N. R.; Wydeven, T.

    1989-01-01

    Reactor loading has an effect on the etch rate (rate of decrease of film thickness) of films of polyvinylfluoride (Tedlar) and polyethylene exposed in the afterglow of an RF discharge in oxygen. The etch rate is found to increase with the total surface area of the polymer exposed in the reactor. The etch rates of polypyromellitimide (Kapton H) and polystyrene under these conditions are very low. However, the etch rate of these polymers is greatly enhanced by adding either Tedlar or polyethylene to the reactor. A kinetic model is proposed based on the premise that the oxygen atoms produced by the RF discharge react with Tedlar or polyethylene to produce a much more reactive species, which dominates the etching of the polymers studied.

  4. Effect of crystal orientation on anisotropic etching and MOCVD growth of grooves on GaAs

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

    1989-01-01

    Grooves can be formed on GaAs by wet-chemical anisotropic etching of surfaces masked by photoresist stripes. The effect of crystal orientation on the shape of the grooves etched and on subsequent epitaxial growth by MOCVD is presented. The polar lattice increases the complexity of the etching and growth processes. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher order planes.

  5. Expanding the diversity of unnatural cell surface sialic acids

    SciTech Connect

    Luchansky, Sarah J.; Goon, Scarlett; Bertozzi, Carolyn R.

    2003-10-30

    Novel chemical reactivity can be introduced onto cell surfaces through metabolic oligosaccharide engineering. This technique exploits the substrate promiscuity of cellular biosynthetic enzymes to deliver unnatural monosaccharides bearing bioorthogonal functional groups into cellular glycans. For example, derivatives of N-acetylmannosamine (ManNAc) are converted by the cellular biosynthetic machinery into the corresponding sialic acids and subsequently delivered to the cell surface in the form of sialoglycoconjugates. Analogs of N-acetylglucosamine (GlcNAc) and N-acetylgalactosamine (GalNAc) are also metabolized and incorporated into cell surface glycans, likely through the sialic acid and GalNAc salvage pathways, respectively. Furthermore, GlcNAc analogs can be incorporated into nucleocytoplasmic proteins in place of {beta}-O-GlcNAc residues. These pathways have been exploited to integrate unique electrophiles such as ketones and azides into the target glycoconjugate class. These functional groups can be further elaborated in a chemoselective fashion by condensation with hydrazides and by Staudinger ligation, respectively, thereby introducing detectable probes onto the cell. In conclusion, sialic acid derivatives are efficient vehicles for delivery of bulky functional groups to cell surfaces and masking of their hydroxyl groups improves their cellular uptake and utilization. Furthermore, the successful introduction of photoactivatable aryl azides into cell surface glycans opens up new avenues for studying sialic acid-binding proteins and elucidating the role of sialic acid in essential processes such as signaling and cell adhesion.

  6. Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask

    NASA Astrophysics Data System (ADS)

    Jin, Joo-Young; Yoo, Sunghyun; Bae, Jae-Sung; Kim, Yong-Kweon

    2014-01-01

    This research highlights a superior glass-wet-etch technique which enables a glass wafer to be etched for more than 20 h in 49 wt% hydrofluoric acid (HF) only with Cr/Au film and a common positive photoresist, AZ4330. We demonstrated that pits on the wet-etched glass wafer were generated not only due to HF diffusion through the Cr/Au film but also due to pinholes on the Cr/Au films created by the diffusion of the Cr/Au etchant through a photoresist etching-mask during the Cr/Au wet etching process. These two types of diffusion, HF diffusion and Cr/Au etchant diffusion, were eliminated by the thermal curing of a photoresist (PR), AZ4330, before the Cr/Au wet etching process. The curing process allowed the PR to dehydrate, increased the hydrophobicity, and prevented the diffusion of the hydrophilic HF and Cr/Au etchant. Optimization of the curing process was performed, showing that curing at 130 °C for 20 min was the proper condition. With the optimized process, a 525 µm thick borosilicate glass wafer was penetrated with 49%wt HF. A fused silica wafer 525 µm thick was also wet-etched and penetrated with 49 wt% HF at 10 h. Moreover, no pits were found in wet etching of the fused silica for 20 h in 49 wt% HF. These findings demonstrate that the proposed technique allows the wet etching of a glass wafer for more than 20 h in 49%wt HF, the best result thus far. We fabricated a glass substrate with a 217.0 µm deep cavity and a penetrating through-via using the proposed technique, proving the feasibility of the product as an optical component with a surface roughness of 45.5 Å in the cavity.

  7. Solderability enhancement of copper through chemical etching

    SciTech Connect

    Stevenson, J.O.; Guilinger, T.R.; Hosking, F.M.; Yost, F.G.; Sorensen, N.R.

    1995-05-01

    Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. The authors are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, the authors present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

  8. Reactive ion etched substrates and methods of making and using

    SciTech Connect

    Rucker, Victor C.; Shediac, Rene; Simmons, Blake A.; Havenstrite, Karen L.

    2007-08-07

    Disclosed herein are substrates comprising reactive ion etched surfaces and specific binding agents immobilized thereon. The substrates may be used in methods and devices for assaying or isolating analytes in a sample. Also disclosed are methods of making the reactive ion etched surfaces.

  9. Laser etching: A new technology to identify Florida grapefruit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beam etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allowing for pathogen entry. The long term effects of laser labeling o...

  10. Aluminum in acidic surface waters: chemistry, transport, and effects.

    PubMed Central

    Driscoll, C T

    1985-01-01

    Ecologically significant concentrations of Al have been reported in surface waters draining "acid-sensitive" watersheds that are receiving elevated inputs of acidic deposition. It has been hypothesized that mineral acids from atmospheric deposition have remobilized Al previously precipitated within the soil during soil development. This Al is then thought to be transported to adjacent surface waters. Dissolved mononuclear Al occurs as aquo Al, as well as OH-, F-, SO4(2-), and organic complexes. Although past investigations have often ignored non-hydroxide complexes of Al, it appears that organic and F complexes are the predominant forms of Al in dilute (low ionic strength) acidic surface waters. The concentration of inorganic forms of Al increases exponentially with decreases in solution pH. This response is similar to the theoretical pH dependent solubility of Al mineral phases. The concentration of organic forms of Al, however, is strongly correlated with variations in organic carbon concentration of surface waters rather than pH. Elevated concentrations of Al in dilute acidic waters are of interest because: Al is an important pH buffer; Al may influence the cycling of important elements like P, organic carbon, and trace metals; and Al is potentially toxic to aquatic organisms. An understanding of the aqueous speciation of Al is essential for an evaluation of these processes. PMID:3935428

  11. Surface tensions of solutions containing dicarboxylic acid mixtures

    NASA Astrophysics Data System (ADS)

    Lee, Jae Young; Hildemann, Lynn M.

    2014-06-01

    Organic solutes tend to lower the surface tension of cloud condensation nuclei, allowing them to more readily activate. The surface tension of various dicarboxylic acid aerosol mixtures was measured at 20 °C using the Wilhelmy plate method. At lower concentrations, the surface tension of a solution with equi-molar mixtures of dicarboxylic acids closely followed that of a solution with the most surface-active organic component alone. Measurements of surface tension for these mixtures were lower than predictions using Henning's model and the modified Szyszkowski equation, by ˜1-2%. The calculated maximum surface excess (Γmax) and inverse Langmuir adsorption coefficient (β) from the modified Szyszkowski equation were both larger than measured values for 6 of the 7 mixtures tested. Accounting for the reduction in surface tension in the Köhler equation reduced the critical saturation ratio for these multi-component mixtures - changes were negligible for dry diameters of 0.1 and 0.5 μm, but a reduction from 1.0068 to 1.0063 was seen for the 4-dicarboxylic acid mixture with a dry diameter of 0.05 μm.

  12. Ion-induced chlorination of titanium leading to enhanced etching

    SciTech Connect

    O'Brien, W.L.; Rhodin, T.N.; Rathbun, L.C.

    1988-10-15

    The ion-induced chemical etching of titanium with chlorine has been studied. Quartz crystal microbalance studies show that the ion beam etch rate of Ti is enhanced upon addition of molecular chlorine, whereas molecular chlorine does not etch Ti in the absence of ion stimulation. This is very similar to the etching behavior of silicon in the presence of argon stimulation and chlorine gas. The etching of titanium is compared to a generalized version of the ion-assisted chemical etching model first proposed by Winters and Coburn. In this model the ion beam either enhances or induces one of the following chemical etching steps: initial adsorption, product formation, or product removal. The ion beam effect on product formation was determined by x-ray photoemission spectroscopy after sample etching. Ion beam effects on product removal were studied by measuring product distributions using modulated ion beam and time-of-flight techniques. It is found that the energetic ions induce formation of a chemically altered surface containing TiCl/sub x/ compounds. It is the ion-induced formation of this altered surface which leads to enhanced etching. Discussion in terms of the general model provides a comparison of the ion-assisted chemical etching mechanisms of titanium to silicon.

  13. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    NASA Astrophysics Data System (ADS)

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  14. Excimer Laser Etching

    SciTech Connect

    Boatner, Lynn A; Longmire, Hu Foster; Rouleau, Christopher M; Gray, Allison S

    2008-04-01

    Excimer laser radiation at a wavelength of = 248 nm represents a new etching method for the preparation of metallographic specimens. The method is shown to be particularly effective for enhancing the contrast between different phases in a multiphase metallographic specimen.

  15. Surface interactions of cesium and boric acid with stainless steel

    SciTech Connect

    Grossman-Canfield, N.

    1995-08-01

    In this report, the effects of cesium hydroxide and boric acid on oxidized stainless steel surfaces at high temperatures and near one atmosphere of pressure are investigated. This is the first experimental investigation of this chemical system. The experimental investigations were performed using a mass spectrometer and a mass electrobalance. Surfaces from the different experiments were examined using a scanning electron microscope to identify the presence of deposited species, and electron spectroscopy for chemical analysis to identify the species deposited on the surface. A better understanding of the equilibrium thermodynamics, the kinetics of the steam-accelerated volatilizations, and the release kinetics are gained by these experiments. The release rate is characterized by bulk vaporization/gas-phase mass transfer data. The analysis couples vaporization, deposition, and desorption of the compounds formed by cesium hydroxide and boric acid under conditions similar to what is expected during certain nuclear reactor accidents. This study shows that cesium deposits on an oxidized stainless steel surface at temperatures between 1000 and 1200 Kelvin. Cesium also deposits on stainless steel surfaces coated with boric oxide in the same temperature ranges. The mechanism for cesium deposition onto the oxide layer was found to involve the chemical reaction between cesium and chromate. Some revaporization in the cesium hydroxide-boric acid system was observed. It has been found that under the conditions given, boric acid will react with cesium hydroxide to form cesium metaborate. A model is proposed for this chemical reaction.

  16. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  17. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    NASA Astrophysics Data System (ADS)

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  18. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  19. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  20. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  1. Effects of Ti surface treatments with silane and arginylglycylaspartic acid peptide on bone cell progenitors.

    PubMed

    Chen, Wen-Cheng; Lo, Yang; Chen, Hong-Sen

    2015-09-01

    Achieving optimal aesthetic appearance is a major objective in dental implant design, and the interaction between the materials and the bone cell progenitors is an important factor in the attainment of this objective. In this study, a novel concept was evaluated by varying the surface modifications on titanium (Ti). Different levels of roughness can be attained by machine grinding (M), sand blasting, and acid etching (SLA) of the samples. The behavior of bone cell progenitors (D1) on the surfaces of Ti disks with different surface modifications was investigated. The surfaces of M or SLA disks were silanized (MS or SLAS group) through treatment with silane/Gly-Arg-Gly-Asp-Ser (GRGDS) peptide (MSP or SLASP group) and anchored particles of tetracalcium phosphate (TTCP) on the specimen surfaces (SLA-TTCP group). Physicochemical analysis was performed by metallographic microscopy, scanning electron microscopy, and contact angle analysis. The proliferation and the quantitative alkaline phosphatase (ALP) production of D1 cells on the surface of different sample groups were determined. The SLASP group had a significantly larger D1 cell proliferation than the other groups after 4 and 7 d of incubation (p < 0.05). ALP expression was a very early marker of differentiation, and was the first indication of the increasing number of cells at 7 d of culture. Among the groups in the M substrate series (i.e., M, MS, and MSP) and in the SLA series (i.e., SLA, SLAS, and SLASP), the MSP and SLASP specimens exhibited superior differentiation abilities on respective cultures until day 7 and day 10. A high number of hydrophilic surfaces dominated cell proliferation in the early stage of cell attachment. However, factors affecting the pore structure and the surface morphology can improve cell proliferation and differentiation. According to analyses of proliferation and ALP expression of bone cell progenitors D1, the original SLA implant surface can be improved with surface treatment

  2. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  3. Surface acidity and degree of carburization of modified silver catalysts

    SciTech Connect

    Pestryakov, A.N.; Belousova, V.N.; Roznina, M.I.

    1993-11-10

    The effect has been studied of some compounds as modifying additives on the surface acidity, degree of carburization, aggregation and silver entrainement of silver-pumice catalysts for methanol oxidation. Catalyst samples have been tested in an industrial reactor. The probable mechanism of modifying action of the additives is discussed.

  4. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  5. Modeling of the angular dependence of plasma etching

    SciTech Connect

    Guo Wei; Sawin, Herbert H.

    2009-11-15

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl{sub 2} plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at {approx}60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10{sup 15} atoms/cm{sup 2} on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  6. Dry-wet digital etching of Ge1-xSnx

    NASA Astrophysics Data System (ADS)

    Shang, Colleen K.; Wang, Vivian; Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Pao, James J.; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Harris, James S.

    2016-02-01

    The development of a precise micromachining process for Ge1-xSnx has the potential to enable both the fabrication and optimization of Ge1-xSnx-based devices in photonics and microelectromechanical systems. We demonstrate a digital etching scheme for Ge0.922Sn0.078 based on a two-stage, highly selective CF4 plasma dry etch and HCl wet etch. Using X-Ray Reflectivity, we show consistent etch control as low as 1.5 nm per cycle, which is defined as one dry etch step followed by one wet etch step. The etch rate increases to 3.2 nm per cycle for a longer dry etch time due to physical sputtering contributions, accompanied by an increase in RMS surface roughness. By operating within a regime with minimal sputtering, we demonstrate that good digital etch depth control and surface quality can be achieved using this technique.

  7. Surface Behavior of Boronic Acid-Terminated Silicones.

    PubMed

    Mansuri, Erum; Zepeda-Velazquez, Laura; Schmidt, Rolf; Brook, Michael A; DeWolf, Christine E

    2015-09-01

    Silicone polymers, with their high flexibility, lie in a monolayer at the air-water interface as they are compressed until a critical pressure is reached, at which point multilayers are formed. Surface pressure measurements demonstrate that, in contrast, silicones that are end-modified with polar groups take up lower surface areas under compression because the polar groups submerge into the water phase. Boronic acids have the ability to undergo coordination with Lewis bases. As part of a program to examine the surface properties of boronic acids, we have prepared boronic acid-modified silicones (SiBAs) and examined them at the air-water interface to better understand if they behave like other end-functional silicones. Monolayers of silicones, aminopropylsilicones, and SiBAs were characterized at the air-water interface as a function of end functionalization and silicone chain length. Brewster angle and atomic force microscopies confirm domain formation and similar film morphologies for both functionalized and non-functionalized silicone chains. There is a critical surface pressure (10 mN m(-1)) independent of chain length that corresponds to a first-order phase transition. Below this transition, the film appears to be a homogeneous monolayer, whose thickness is independent of the chain length. Ellipsometry at the air-water interface indicates that the boronic acid functionality leads to a significant increase of film thickness at low molecular areas that is not seen for non-functionalized silicone chains. What differentiates the boronic acids from simple silicones or other end-functionalized silicones, in particular, is the larger area occupied by the headgroup when under compression compared to other or non-end-functionalized silicones, which suggests an in-plane rather than submerged orientation that may be driven by boronic acid self-complexation. PMID:26263385

  8. Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium

    NASA Astrophysics Data System (ADS)

    Deng, Changmeng; Geng, Yongyou; Wu, Yiqun

    2011-09-01

    In this paper, we study Ge2Sb2Te5 phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge2Sb2Te5 films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.

  9. Bioactive Surface Modification of Hydroxyapatite

    PubMed Central

    Okazaki, Yohei; Hiasa, Kyou; Yasuda, Keisuke; Nogami, Keisuke; Mizumachi, Wataru; Hirata, Isao

    2013-01-01

    The purpose of this study was to establish an acid-etching procedure for altering the Ca/P ratio of the nanostructured surface of hydroxyapatite (HAP) by using surface chemical and morphological analyses (XPS, XRD, SEM, surface roughness, and wettability) and to evaluate the in vitro response of osteoblast-like cells (MC3T3-E1 cells) to the modified surfaces. This study utilized HAP and HAP treated with 10%, 20%, 30%, 40%, 50%, or 60% phosphoric acid solution for 10 minutes at 25°C, followed by rinsing 3 times with ultrapure water. The 30% phosphoric acid etching process that provided a Ca/P ratio of 1.50, without destruction of the grain boundary of HAP, was selected as a surface-modification procedure. Additionally, HAP treated by the 30% phosphoric acid etching process was stored under dry conditions at 25°C for 12 hours, and the Ca/P ratio approximated to 1.00 accidentally. The initial adhesion, proliferation, and differentiation (alkaline phosphatase (ALP) activity and relative mRNA level for ALP) of MC3T3-E1 cells on the modified surfaces were significantly promoted (P < 0.05 and 0.01). These findings show that the 30% phosphoric acid etching process for the nanostructured HAP surface can alter the Ca/P ratio effectively and may accelerate the initial adhesion, proliferation, and differentiation of MC3T3-E1 cells. PMID:23862150

  10. Competitive and synergistic effects between excimer VUV radiation and O radicals on the etching mechanisms of polyethylene and fluoropolymer surfaces treated by an atmospheric He-O2 post-discharge

    NASA Astrophysics Data System (ADS)

    Dufour, T.; Hubert, J.; Vandencasteele, N.; Viville, P.; Lazzaroni, R.; Reniers, F.

    2013-08-01

    Among various surface modification techniques, plasma can be used as a source for tailoring the surface properties of diverse materials. HDPE and fluoropolymer surfaces have been treated by the post-discharge of an atmospheric RF-plasma torch supplied with helium and oxygen gases. The plasma-treated surfaces were characterized by measurements of mass losses, water contact angles, x-ray photoelectron spectroscopy and atomic force microscopy. This experimental approach correlated with an optical characterization of the plasma phase allowed us to propose etching mechanisms occurring at the post-discharge/polymer interface. We discuss how competitive and synergistic effects can result from the oxidation and/or the roughening of the surface but also from the excimer VUV radiation, the He metastable species and the O radicals reaching the plasma-polymer interface.

  11. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  12. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

    1991-01-01

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  13. Surface acidity scales: Experimental measurements of Brønsted acidities on anatase TiO2 and comparison with coinage metal surfaces

    NASA Astrophysics Data System (ADS)

    Silbaugh, Trent L.; Boaventura, Jaime S.; Barteau, Mark A.

    2016-08-01

    The first quantitative surface acidity scale for Brønsted acids on a solid surface is presented through the use of titration-displacement and equilibrium experiments on anatase TiO2. Surface acidities of species on TiO2 correlated with gas phase acidities, as was previously observed in qualitative studies of Brønsted acid displacement on Ag(110), Cu(110) and Au(111). A 90% compression of the surface acidity scale relative to the gas phase was observed due to compensation from the covalent component of the conjugate base - surface bond. Adsorbed conjugate bases need not be completely anionic for correlations with gas phase acidities to hold. Positive and negative substituent effects, such as substituted fluorine and hydrocarbon sidechain dispersion interactions with the surface, may modify the surface acidity scale, in agreement with previous experimental and theoretical work on Au(111).

  14. Influence of erbium, chromium-doped: Yttrium scandium-gallium-garnet laser etching and traditional etching systems on depth of resin penetration in enamel: A confocal laser scanning electron microscope study

    PubMed Central

    Vijayan, Vishal; Rajasigamani, K.; Karthik, K.; Maroli, Sasidharan; Chakkarayan, Jitesh; Haris, Mohamed

    2015-01-01

    Objective: This study was performed to assess the resin tag length penetration in enamel surface after bonding of brackets to identify which system was most efficient. Methodology: Our study was based on a more robust confocal microscopy for visualizing the resin tags in enamel. Totally, 100 extracted human first and second premolars have been selected for this study and were randomly divided into ten groups of 10 teeth each. In Group 1, the buccal enamel surface was etched with 37% phosphoric acid (3M ESPE), Group 2 with 37% phosphoric (Ultradent). In Groups 5, 6, and 7, erbium, chromium-doped: Yttrium scandium-gallium-garnet (Er, Cr: YSGG) laser (Biolase) was used for etching the using following specifications: Group 5 (1.5 W/20 Hz, 15 s), Group 6 (2 W/10 Hz, 15 s), and Group 7 (2 W/20 Hz, 15 s). In Groups 8, 9, and 10, Er, Cr: YSGG laser (Biolase) using same specifications and additional to this step, conventional etching on the buccal enamel surface was etched with 37% (3M ESPE) after laser etching. In Groups 1, 5, 6, 7, 8, 9, and 10 3M Unitek Transbond XT primer was mixed with Rhodamine B dye (Sigma-Aldrich, Germany) to etched surface and then cured for 20 s. In Group 2, Ultradents bonding agent was mixed with Rhodamine B. In Group 3, 3M Unitek Transbond PLUS, Monrovia, USA, which was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Group 4, with self-etching primer (Ultradent-Peak SE, USA) was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Later (3M Unitek, Transbond XT, Monrovia USA) [Figure 1] was used to bond the modified Begg brackets (T. P. Orthodontics) in Groups 1, 3, 5, 6, 7, 8, 9, and 10. In Groups 2, 4 Ultradent-Peak LC Bond was used to bond the modified brackets. After curing brackets were debonded, and enamel depth penetration was assessed using confocal laser scanning microscope. Results: Group J had a mean maximum depth of penetration of 100.876 μm, and Group D was the least having a maximum value of 44.254 μm. Conclusions: Laser

  15. Inductively coupled plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Casalnuovo, S.A.; Rieger, D.J.; Pearton, S.J.; Constantine, C.; Barratt, C.; Karlicek, R.F. Jr.; Tran, C.; Schurman, M.

    1996-08-01

    Inductively coupled plasma (ICP) etch rates for GaN are reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power. Using a Cl{sub 2}/H{sub 2}/Ar plasma chemistry, GaN etch rates as high as 6875 A/min are reported. The GaN surface morphology remains smooth over a wide range of plasma conditions as quantified using atomic force microscopy. Several etch conditions yield highly anisotropic profiles with smooth sidewalls. These results have direct application to the fabrication of group-III nitride etched laser facets. {copyright} {ital 1996 American Institute of Physics.}

  16. Combinatorial localized dissolution analysis: Application to acid-induced dissolution of dental enamel and the effect of surface treatments.

    PubMed

    Parker, Alexander S; Al Botros, Rehab; Kinnear, Sophie L; Snowden, Michael E; McKelvey, Kim; Ashcroft, Alexander T; Carvell, Mel; Joiner, Andrew; Peruffo, Massimo; Philpotts, Carol; Unwin, Patrick R

    2016-08-15

    A combination of scanning electrochemical cell microscopy (SECCM) and atomic force microscopy (AFM) is used to quantitatively study the acid-induced dissolution of dental enamel. A micron-scale liquid meniscus formed at the end of a dual barrelled pipette, which constitutes the SECCM probe, is brought into contact with the enamel surface for a defined period. Dissolution occurs at the interface of the meniscus and the enamel surface, under conditions of well-defined mass transport, creating etch pits that are then analysed via AFM. This technique is applied to bovine dental enamel, and the effect of various treatments of the enamel surface on acid dissolution (1mM HNO3) is studied. The treatments investigated are zinc ions, fluoride ions and the two combined. A finite element method (FEM) simulation of SECCM mass transport and interfacial reactivity, allows the intrinsic rate constant for acid-induced dissolution to be quantitatively determined. The dissolution of enamel, in terms of Ca(2+) flux ( [Formula: see text] ), is first order with respect to the interfacial proton concentration and given by the following rate law: [Formula: see text] , with k0=0.099±0.008cms(-1). Treating the enamel with either fluoride or zinc ions slows the dissolution rate, although in this model system the partly protective barrier only extends around 10-20nm into the enamel surface, so that after a period of a few seconds dissolution of modified surfaces tends towards that of native enamel. A combination of both treatments exhibits the greatest protection to the enamel surface, but the effect is again transient. PMID:27209395

  17. Acid Cleavable Surface enhanced Raman Tagging for Protein Detection

    PubMed Central

    Zhang, Dongmao; Vangala, Karthikeshwar; Li, Shaoyong; Yanney, Michael; Xia, Hao; Zou, Sige; Sygula, Andrzej

    2010-01-01

    Dye conjugation is a common strategy improving the surface enhanced Raman detection sensitivity of biomolecules. Reported is a proof-of-concept study of a novel surface enhanced Raman spectroscopic tagging strategy termed as acid-cleavable SERS tag (ACST) method. Using Rhodamine B as the starting material, we prepared the first ACST prototype that consisted of, from the distal end, a SERS tag moiety (STM), an acid-cleavable linker, and a protein reactive moiety. Complete acid cleavage of the ACST tags was achieved at a very mild condition that is 1.5% trifluoroacetic acid (TFA) aqueous solution at room temperature. SERS detection of this ACST tagged protein was demonstrated using bovine serum albumin (BSA) as the model protein. While the SERS spectrum of intact ACST-BSA was entirely dominated by the fluorescent signal of STM, quality SERS spectra can be readily obtained with the acid cleaved ACST-BSA conjugates. Separation of the acid cleaved STM from protein further enhances the SERS sensitivity. Current SERS detection sensitivity, achieved with the acid cleaved ACST-BSA conjugate is ~5 nM in terms of the BSA concentration and ~1.5 nM in ACST content. The linear dynamic range of the cleaved ACST-BSA conjugate spans four orders of magnitudes from ~10 nM to ~100 μM in protein concentrations. Further improvement in the SERS sensitivity can be achieved with resonance Raman acquisition. This cleavable tagging strategy may also be used for elimination of protein interference in fluorescence based biomolecule detection. PMID:21109888

  18. Fatty acid methyl ester profiles of bat wing surface lipids.

    PubMed

    Pannkuk, Evan L; Fuller, Nathan W; Moore, Patrick R; Gilmore, David F; Savary, Brett J; Risch, Thomas S

    2014-11-01

    Sebocytes are specialized epithelial cells that rupture to secrete sebaceous lipids (sebum) across the mammalian integument. Sebum protects the integument from UV radiation, and maintains host microbial communities among other functions. Native glandular sebum is composed primarily of triacylglycerides (TAG) and wax esters (WE). Upon secretion (mature sebum), these lipids combine with minor cellular membrane components comprising total surface lipids. TAG and WE are further cleaved to smaller molecules through oxidation or host enzymatic digestion, resulting in a complex mixture of glycerolipids (e.g., TAG), sterols, unesterified fatty acids (FFA), WE, cholesteryl esters, and squalene comprising surface lipid. We are interested if fatty acid methyl ester (FAME) profiling of bat surface lipid could predict species specificity to the cutaneous fungal disease, white nose syndrome (WNS). We collected sebaceous secretions from 13 bat spp. using Sebutape(®) and converted them to FAME with an acid catalyzed transesterification. We found that Sebutape(®) adhesive patches removed ~6× more total lipid than Sebutape(®) indicator strips. Juvenile eastern red bats (Lasiurus borealis) had significantly higher 18:1 than adults, but 14:0, 16:1, and 20:0 were higher in adults. FAME profiles among several bat species were similar. We concluded that bat surface lipid FAME profiling does not provide a robust model predicting species susceptibility to WNS. However, these results provide baseline data that can be used for lipid roles in future ecological studies, such as life history, diet, or migration. PMID:25227993

  19. The radiolysis and radioracemization of amino acids on silica surfaces

    NASA Technical Reports Server (NTRS)

    Bonner, W. A.; Lemmon, R. M.

    1981-01-01

    Results are presented of experiments on the radioracemization of amino acids in the presence of silica surfaces such as may have been found on the prebiotic earth. L-leucine and a DL-leucine mixture deposited on samples of 1-quartz and an amorphous silica preparation (Syloid 63) was subjected to Co-60 gamma-ray irradiation, then analyzed by gas chromatography to determine the radiolysis and racemization rates. The quartz surface is found to have a marginal efficacy in enhancing radiolysis when compared with a crystalline L-leucine control, although enhancing radioracemization symmetrically by a factor of two. Both the radiolysis and radioracemization of L-leucine and DL-leucine on a Syloid-63 silica surface are observed to increase with increasing radiation dose, and to be substantially greater than in the crystalline controls. Additional experiments with the nonprotein amino acid isovaline deposited on Syloid 63 confirm the greater radiolysis susceptibility of amino acids deposited on silica with respect to the crystalline state, although racemization is not observed. The observations suggest that the presence of a silica surface would have a deleterious effect on any mechanism for the origin of molecular chirality relying on stereoselective beta-radiolysis.

  20. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  1. Reactive ion etching of quartz and Pyrex for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  2. Gradual surface degradation of restorative materials by acidic agents.

    PubMed

    Hengtrakool, Chanothai; Kukiattrakoon, Boonlert; Kedjarune-Leggat, Ureporn

    2011-01-01

    The aim of this study was to investigate the effect of acidic agents on surface roughness and characteristics of four restorative materials. Fifty-two discs were created from each restorative material: metal-reinforced glass ionomer cement (Ketac-S), resin-modified glass ionomer cement (Fuji II LC), resin composite (Filtek Z250), and amalgam (Valiant-PhD); each disc was 12 mm in diameter and 2.5 mm thick. The specimens were divided into four subgroups (n=13) and immersed for 168 hours in four storage media: deionized water (control); citrate buffer solution; green mango juice; and pineapple juice. Surface roughness measurements were performed with a profilometer, both before and after storage media immersion. Surface characteristics were examined using scanning electron microscopy (SEM). Statistical significance among each group was analyzed using two-way repeated ANOVA and Tukey's tests. Ketac-S demonstrated the highest roughness changes after immersion in acidic agents (p<0.05), followed by Fuji II LC. Valiant-PhD and Filtek Z250 illustrated some minor changes over 168 hours. The mango juice produced the greatest degradation effect of all materials tested (p<0.05). SEM photographs demonstrated gradual surface changes of all materials tested after immersions. Of the materials evaluated, amalgam and resin composite may be the most suitable for restorations for patients with tooth surface loss. PMID:21903509

  3. Etched profile control in anisotropic etching of silicon by TMAH+Triton

    NASA Astrophysics Data System (ADS)

    Pal, Prem; Gosálvez, M. A.; Sato, K.

    2012-06-01

    The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and nonstirred solutions. Triton X-100, with formula C14H22O(C2H4O)n, where n = 9-10, is used as the surfactant. The stirring results conclude that the adsorption of the surfactant on the etched silicon surfaces is predominantly physical in nature rather than chemical (physisorption versus chemisorption). The proposed model to account for the galvanic interaction between the evolving facets indicates that the underlying chemical etching process can be significantly surpassed by the onset of an electrochemical etching contribution when the relative area of the exposed {1 0 0} surface becomes relatively small in comparison to that of the developed {1 1 1} sidewalls. This study is useful for engineering applications where surfactant-added TMAH is used for the fabrication of silicon MEMS structures that should contain negligible undercutting.

  4. Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

    NASA Astrophysics Data System (ADS)

    Shim, Kyu-Hwan; Yang, Ha Yong; Kil, Yeon-Ho; Yang, Hyeon Deok; Yang, Jong-Han; Hong, Woong-Ki; Kang, Sukill; Jeong, Tae Soo; Kim, Taek Sung

    2012-08-01

    The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ˜200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ˜1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

  5. Determination of surface-accessible acidic hydroxyls and surface area of lignin by cationic dye adsorption.

    PubMed

    Sipponen, Mika Henrikki; Pihlajaniemi, Ville; Littunen, Kuisma; Pastinen, Ossi; Laakso, Simo

    2014-10-01

    A new colorimetric method for determining the surface-accessible acidic lignin hydroxyl groups in lignocellulose solid fractions was developed. The method is based on selective adsorption of Azure B, a basic dye, onto acidic hydroxyl groups of lignin. Selectivity of adsorption of Azure B on lignin was demonstrated using lignin and cellulose materials as adsorbents. Adsorption isotherms of Azure B on wheat straw (WS), sugarcane bagasse (SGB), oat husk, and isolated lignin materials were determined. The maximum adsorption capacities predicted by the Langmuir isotherms were used to calculate the amounts of surface-accessible acidic hydroxyl groups. WS contained 1.7-times more acidic hydroxyls (0.21 mmol/g) and higher surface area of lignin (84 m(2)/g) than SGB or oat husk materials. Equations for determining the amount of surface-accessible acidic hydroxyls in solid fractions of the three plant materials by a single point measurement were developed. A method for high-throughput characterization of lignocellulosic materials is now available. PMID:25033327

  6. Mitigation of acid deposition: Liming of surface waters. Final report

    SciTech Connect

    Bartoshesky, J.; Price, R.; DeMuro, J.

    1989-05-01

    In recent years acid deposition has become a serious concern internationally. Scientific literature has documented the acidification of numerous lakes and streams in North America and Scandinavia resulting in the depletion or total loss of fisheries and other aquatic biota. Liming represents the only common corrective practice aimed specifically at remediating an affected acid receptor. This report reviews a range of liming technologies and liming materials, as well as the effect of surface-water liming on water quality and aquatic biota. As background to the liming discussion, the hydrologic cycle and the factors that make surface waters sensitive to acid deposition are also discussed. Finally, a brief review of some of the liming projects that have been conducted, or are currently in operation is presented, giving special emphasis to mitigation efforts in Maryland. Liming has been effectively used to counteract surface-water acidification in parts of Scandinavia, Canada, and the U.S. To date, liming has generally been shown to improve physical and chemical conditions and enhance the biological recovery of aquatic ecosystems affected by acidification.

  7. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  8. Selectively-etched nanochannel electrophoretic and electrochemical devices

    DOEpatents

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2006-06-27

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  9. Selectively-etched nanochannel electrophoretic and electrochemical devices

    SciTech Connect

    Surh, Michael P.; Wilson, William D.; Barbee, Jr., Troy W.; Lane, Stephen M.

    2004-11-16

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  10. Sb (111) Abnormal Behavior under Ion Etching

    NASA Astrophysics Data System (ADS)

    Smirnov, A. A.; Bozhko, S. I.; Ionov, A. M.; Protasova, S. G.; Chekmazov, S. V.; Kapustin, A. A.

    Due to a strong spin-orbit interaction (SOI), the surface states of Sb (111) are similar to those for topological insulators (TI) Sugawara et al. (2006). The surface states are protected by time-reversal symmetry and energy dispersion is a linear function of momentum. Defects in crystal structure lead to a local break of the surface translational symmetry and can modify surface states. It is the primary reason to study defects of Sb crystal structure and their effect on the surface states dispersion. Etching of the Sb (111) surface using Ar+ ions is a common way to create defects both in a bulk and on the surface of the crystal. Sb (111) ion etching at room temperature reveals anomalous behavior of surface crystal structure. It results in formation of flat terraces of 2 nm in size. Investigation of electronic structure of the etched Sb (111) surface has demonstrated increase of density of states (DOS) at the Fermi level. The results are discussed in terms of local break of conditions of Peierls transition.

  11. Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—

    NASA Astrophysics Data System (ADS)

    Suemitsu, Maki; Kaneko, Tetsuya; Miyamoto, Nobuo

    1989-12-01

    Several variations of fluoric acid (HF) treatments of silicon substrates were examined for their adaptability as a pretreatment method for a silicon epitaxy process. Treatments with and without distilled, deionized (DI) water rinse, of different HF concentrations, and of different methods of HF supply were tested and their residual carbonic impurity contents were measured using RHEED. As a result, HF treatments by themselves were found to be insufficient in passivating the surface dangling bonds irrespective of the method of HF supply: dipping into the solution or exposure to the vapor. The optimum procedure of HF treatment thus proposed is a succession of (a) HF dipping, (b) DI-water rinsing, (c) nitrogen-gas blowing, and (d) UV-ozone cleaning.

  12. Effect of application mode on interfacial morphology and chemistry between dentin and self-etch adhesives

    PubMed Central

    Zhang, Ying; Wang, Yong

    2012-01-01

    Objective To investigate the influence of application mode on the interfacial morphology and chemistry between dentin and self-etch adhesives with different aggressiveness. Methods The occlusal one-third of the crown was removed from un-erupted human third molars, followed by abrading with 600 grit SiC under water. Rectangular dentin slabs were prepared by sectioning the tooth specimens perpendicular to the abraded surfaces. The obtained dentin slabs were treated with one of the two one-step self-etch adhesives: Adper Easy Bond (AEB, PH~2.5) and Adper Prompt L-Pop (APLP, PH~0.8) with (15s, active application) or without (15s, inactive application) agitation. The dentin slabs were fractured and the exposed adhesive/dentin (A/D) interfaces were examined with micro-Raman spectroscopy and scanning electron microscopy (SEM). Results The interfacial morphology, degree of dentin demineralization (DD) and degree of conversion (DC) of the strong self-etch adhesive APLP showed more significant dependence on the application mode than the mild AEB. APLP exhibited inferior bonding at the A/D interface if applied without agitation, evidenced by debonding from the dentin substrate. The DDs and DCs of the APLP with agitation were higher than those of without agitation in the interface, in contrast to the comparable DD and DC values of two AEB specimen groups with different application modes. Raman spectral analysis revealed the important role of chemical interaction between acid monomers of self-etch adhesives and dentin in the above observations. Conclusion The chemical interaction with dentin is especially important for improving the DC of the strong self-etching adhesive at the A/D interface. Agitation could benefit polymerization efficacy of the strong self-etch adhesive through enhancing the chemical interaction with tooth substrate. PMID:23153573

  13. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    NASA Astrophysics Data System (ADS)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  14. Etching fission tracks in zircons

    USGS Publications Warehouse

    Naeser, C.W.

    1969-01-01

    A new technique has been developed whereby fission tracks can be etched in zircon with a solution of sodium hydroxide at 220??C. Etching time varied between 15 minutes and 5 hours. Colored zircon required less etching time than the colorless varieties.

  15. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  16. Interactions of aminomethylphosphonic acid and sarcosine with montmorillonite interlayer surfaces

    NASA Astrophysics Data System (ADS)

    Rennig, Amanda; Slutter, Annette; Tribe, Lorena

    The smectite clay, montmorillonite, can be found in many soils throughout the world. In addition to its importance in agriculture and soil remediation, montmorillonite has extensive applications in industry both in its natural form and as a component of composite materials. The adsorptive properties of montmorillonite have been explored in relation to its interactions with the common herbicide glyphosate. This herbicide, when exposed to microorganisms in the soil is degraded, forming two products: aminomethylphosphonic acid (AMPA) and sarcosine. The atomic-level interactions of these compounds with the montmorillonite interlayer surfaces are studied here using molecular mechanics. The final outcomes of these calculations are analyzed in terms of the proximity of the montmorillonite surface to the moieties of the degradation products. The phosphonate moiety was found to be the most important source of interactions for AMPA, while for sarcosine there was an even distribution between the amino and carboxylic moieties, and Na+ ion mediated surface complexes.0

  17. Surface profile changes of scuffed bearing surfaces. [before and after acid treatment

    NASA Technical Reports Server (NTRS)

    Lauer, J. L.; Fung, S. S.; Jones, W. R., Jr.

    1982-01-01

    A phase locked interference microscope capable of resolving depth differences to 30 A and planar displacements of 6000 A was constructed for the examination of the profiles of bearing surfaces without physical contact. This instrument was used to determine surface chemical reactivity by applying a drop of dilute alcoholic hydrochloric acid and measuring the profile of the solid surface before and after application of this probe. Scuffed bearing surfaces reacted much faster than unscuffed ones, but bearing surfaces which had been previously exposed to lubricants containing an organic chloride reacted much more slowly. In a separate series of experiments, a number of stainless steel plates were heated in a nitrogen atmosphere to different temperatures and their reactivity examined later at room temperature. The change of surface contour as a result of the probe reaction followed an Arrhenius type relation with respect to heat treatment temperature. This result could have implications on the scuffing mechanism.

  18. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells.

    PubMed

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-12-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time. PMID:26754938

  19. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-01-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time.

  20. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    DOEpatents

    Not Available

    1980-05-28

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking is described. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  1. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    DOEpatents

    Steeves, Arthur F.; Stewart, James C.

    1981-01-01

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  2. Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon.

    PubMed

    Lianto, Prayudi; Yu, Sihang; Wu, Jiaxin; Thompson, C V; Choi, W K

    2012-12-01

    Metal assisted chemical etching with interconnected catalyst structures has been used to create a wide array of organized nanostructures. However, when patterned catalysts are not interconnected, but are isolated instead, vertical etching to form controlled features is difficult. A systematic study of the mechanism and catalyst stability of metal assisted chemical etching (MACE) of Si in HF and H(2)O(2) using Au catalysts has been carried out. The effects of the etchants on the stability of Au catalysts were examined in detail. The role of excess electronic holes as a result of MACE was investigated via pit formation as a function of catalyst proximity and H(2)O(2) concentration. We show that a suppression of excess holes can be achieved by either adding NaCl to or increasing the HF concentration of the etching solution. We demonstrate that an electric field can direct most of the excess holes to the back of the Si wafer and thus reduce pit formation at the surface of Si between the Au catalysts. The effect of hydrogen bubbles, generated as a consequence of MACE, on the stability of Au catalysts has also been investigated. We define a regime of etch chemistry and catalyst spacing for which catalyst stability and vertical etching can be achieved. PMID:23099475

  3. Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

    1989-01-01

    Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

  4. Chemical modification of near-surface charge trapping in polymers

    NASA Astrophysics Data System (ADS)

    Haridoss, S.; Perlman, M. M.

    1984-03-01

    The surfaces of three polyolefin films, low-density polyethylene, high-density polyethylene, and polypropylene, were chemically modified by etching with permanganic acid, and low-density polyethylene by etching with chromic acid and by staining with chlorosulphonic acid. Polytetrafluoroethylene (Teflon) was treated with a sodium naphthalene complex in glycol ether. The surfaces were examined with a scanning electron microscope, and chemical groups identified by attenuated total reflectance infrared measurements. The surfaces were then corona charged, and the charge stability and trap distributions determined by the methods of thermally stimulated charge decay and thermally stimulated current, respectively. Scanning electron micrographs revealed a nodular surface structure in polyolefins etched with permanganic acid, a rough surface without nodules in low-density polyethylene etched with chromic acid, isolated corroded surface spots in low-density polyethylene stained with chlorosulphonic acid, and a web-like surface in etched Teflon. Permanganic acid removed amorphous and defective regions of the polymer surfaces, exposing more crystalline regions and crystalline-amorphous boundaries, both of which provided trapping sites, producing better charge storers than the virgin equivalents. Lifetimes, and hence usable temperatures in device application, were increased for both negative and positive charge. The other acids reduced the lifetimes in low-density polyethylene. Etching made Teflon as good a positive charge storer as the virgin negatively charged material, a result important to practical applications. While attenuated total reflectance measurements showed the presence of various chemical groups, charge stability seemed to depend more on surface morphology than on which active groups were added to the polymers by the etchants and staining agent.

  5. Adsorption of naphthenic acids on high surface area activated carbons.

    PubMed

    Iranmanesh, Sobhan; Harding, Thomas; Abedi, Jalal; Seyedeyn-Azad, Fakhry; Layzell, David B

    2014-01-01

    In oil sands mining extraction, water is an essential component; however, the processed water becomes contaminated through contact with the bitumen at high temperature, and a portion of it cannot be recycled and ends up in tailing ponds. The removal of naphthenic acids (NAs) from tailing pond water is crucial, as they are corrosive and toxic and provide a substrate for microbial activity that can give rise to methane, which is a potent greenhouse gas. In this study, the conversion of sawdust into an activated carbon (AC) that could be used to remove NAs from tailings water was studied. After producing biochar from sawdust by a slow-pyrolysis process, the biochar was physically activated using carbon dioxide (CO2) over a range of temperatures or prior to producing biochar, and the sawdust was chemically activated using phosphoric acid (H3PO4). The physically activated carbon had a lower surface area per gram than the chemically activated carbon. The physically produced ACs had a lower surface area per gram than chemically produced AC. In the adsorption tests with NAs, up to 35 mg of NAs was removed from the water per gram of AC. The chemically treated ACs showed better uptake, which can be attributed to its higher surface area and increased mesopore size when compared with the physically treated AC. Both the chemically produced and physically produced AC provided better uptake than the commercially AC. PMID:24766592

  6. Evaluating the shear bond strength of enamel and dentin with or without etching: A comparative study between dimethacrylate-based and silorane-based adhesives

    PubMed Central

    Hajizadeh, Hila; Nasseh, Atefeh; Rahmanpour, Naim

    2015-01-01

    Background Silorane-based composites and their specific self-etch adhesive were introduced to conquest the polymerization shrinkage of methacrylate-based composites. It has been shown that additional etching of enamel and dentin can improve the bond strength of self-etch methacrylate-based adhesives but this claim is not apparent about silorane-based adhesives. Our objective was to compare the shear bond strength (SBS) of enamel and dentin between silorane-based adhesive resin and a methacrylate-based resin with or without additional etching. Material and Methods 40 sound human premolars were prepared and divided into two groups: 1- Filtek P60 composite and Clearfil SE Bond adhesive; 2- Filtek P90 composite and Silorane adhesive. Each group divided into two subgroups: with or without additional etching. For additional etching, 37% acid phosphoric was applied before bonding procedure. A cylinder of the composite was bonded to the surface. After 24 hours storage and 500 thermo cycling between 5-55°C, shear bond strength was assessed with the cross head speed of 0.5 mm/min. Then, bonded surfaces were observed under stereomicroscope to determine the failure mode. Data were analyzed with two-way ANOVA and Fischer exact test. Results Shear bond strength of Filtek P60 composite was significantly higher than Filtek P90 composite both in enamel and dentin surfaces (P<0.05). However, additional etching had no significant effect on shear bond strength in enamel or dentin for each of the composites (P>0.05). There was no interaction between composite type and additional etching (P>0.05). Failure pattern was mainly adhesive and no significant correlation was found between failure and composite type or additional etching (P>0.05). Conclusions Shear bond strength of methacrylate-based composite was significantly higher than silorane-based composite both in enamel and dentin surfaces and additional etching had no significant effect on shear bond strength in enamel or dentin for

  7. Acid-base properties of aqueous illite surfaces

    SciTech Connect

    Du, Q.; Sun, Z.; Forsling, W.; Tang, H.

    1997-03-01

    In this paper, the acid-base properties of illite/water suspensions are examined using the constant capacitance surface complexation model. On the basis of results of potentiometric titrations and solubility experiments, the authors conclude that the proton reactions in the supernatants of illite suspensions can be successfully represented by proton reactions of Al(H{sub 2}O){sub 6}{sup 3+} and Si(OH){sub 4} in water solutions. For illustrating the acidic characteristics of aqueous illite surfaces, two surface protonation models are proposed: (1) one site-one pK{sub a} model, {triple_bond}SOH {r_reversible} {triple_bond}SO{sup {minus}} + H{sup +}, pK{sub a}{sup int} = 4.12-4.23; (2) two sites-two pK{sub a}s model, {triple_bond}S{sub 1}OH {r_reversible} {triple_bond}S{sup 1}O{sup {minus}} + H{sup +}, pK{sub a{sub I}} = 4.17-4.44, and {triple_bond}S{sub II}OH {r_reversible} {triple_bond}S{sub II}O{sup {minus}} + H{sup +}, pK{sub a{sub II}}{sup int} = 6.35-7.74. Evaluation of these two models indicates that both of them can give good descriptions of the experimental data of systems with different illite concentrations and ionic strengths and that the one site-one pK{sub a} model can be considered as a simplification of the two sites-two pK{sub a}s model. Since both models assume only deprotonation reactions at the illite surfaces, they suggest that the surface behavior of the illite is similar to that of amorphous SiO{sub 2}. Model assumptions, experimental procedures, and evaluative criteria are detailed in the paper.

  8. Effect of surface pretreatments on resin composite bonding to PEEK.

    PubMed

    Silthampitag, Patcharawan; Chaijareenont, Pisaisit; Tattakorn, Kittipong; Banjongprasert, Chaiyasit; Takahashi, Hidekazu; Arksornnukit, Mansuang

    2016-01-01

    This study evaluated the effect of surface pretreatments on resin composite bonding to polyetheretherketone (PEEK). Four groups of surface pretreatment (no pretreatment, etched with 98% sulfuric acid, etched with piranha solution and sandblasting with 50 µm alumina) were performed on PEEK. Surface roughness, Scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR) analysis were examined. Shear bond strength (SBS) and interface characteristics were also evaluated after the specimens were bonded with resin materials. Two-way ANOVA analysis revealed significance on two main effects and interactions. Tukey's multiple comparisons test showed that the SBS of resin composite on PEEK were the highest in the group etched with 98% sulfuric acid and bonded with Heliobond(®) (p<0.05). All pretreatments produced similar spectra of FTIR patterns. SEM demonstrated porosities and pitting from chemical etching, which suggested a significant influence on the adhesion between PEEK and resin materials. PMID:27477234

  9. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma

    SciTech Connect

    Hareland, W.A.; Buss, R.J.

    1993-06-01

    Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.

  10. Chlorine-based dry etching of β-Ga2O3

    NASA Astrophysics Data System (ADS)

    Hogan, Jack E.; Kaun, Stephen W.; Ahmadi, Elaheh; Oshima, Yuichi; Speck, James S.

    2016-06-01

    Reactive ion etching (RIE) and inductively coupled plasma (ICP) etching techniques were used to determine the optimal dry etch conditions for β-Ga2O3. RF power and chamber pressure were examined to study their effects on etch rate and surface roughness for three crystallographic planes, i.e., (100); (010); and (\\bar{2}01) by RIE. BCl3 etch rate calibrations were performed on all β-Ga2O3 planes studied, in comparison to Cl2. RIE yielded moderate etch rates (<20 nm min‑1), and surface roughness showed no clear trend with RF power. Moreover, the effect of bias power, plasma power, and the choice of etchant were studied using ICP. The etches performed by ICP were shown to be superior to RIE in both etch rate and surface roughness, due to the much higher plasma densities and uniformities possible with plasma powers beyond those realized in RIE. The maximum etch rate of 43.0 nm min‑1 was achieved using BCl3 in ICP. SF6/BCl3 mixtures, which yield high GaN etch rates, were also studied. However, in contrast to GaN etching, SF6/BCl3 was found to be far less effective than pure BCl3 in etching β-Ga2O3.

  11. Improving UV laser damage threshold of fused silica optics by wet chemical etching technique

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Li, Yaguo; Yuan, Zhigang; Wang, Jian; Xu, Qiao; Yang, Wei

    2015-07-01

    Fused silica is widely used in high-power laser systems because of its good optical performance and mechanical properties. However, laser damage initiation and growth induced by 355 nm laser illumination in optical elements have become a bottleneck in the development of high energy laser system. In order to improve the laser-induced damage threshold (LIDT), the fused silica optics were treated by two types of HF-based etchants: 1.7%wt. HF acid and buffer oxide etchant (BOE: the mixture of 0.4%wt. HF and 12%wt. NH4F), respectively, for varied etching time. Damage testing shows that both the etchants increase the damage threshold at a certain depth of material removal, but further removal of material lowers the LIDT markedly. The etching rates of both etchants keep steady in our processing procedure, ~58 μg/min and ~85 μg/min, respectively. The micro-surface roughness (RMS and PV) increases as etching time extends. The hardness (H) and Young's modulus (E) of the fused silica etched for diverse time, measured by nano-indenter, show no solid evidence that LIDT can be related to hardness or Young's modulus.

  12. Morphological evolution of silver nanoparticles and its effect on metal-induced chemical etching of silicon.

    PubMed

    Baek, Seong-Ho; Kong, Bo Hyun; Cho, Hyung Koun; Kim, Jae Hyun

    2013-05-01

    In this report, we have demonstrated the morphological evolution of the silver nanoparticles (AgNPs) by controlling the growth conditions and its effect on morphology of silicon (Si) during metal-induced electroless etching (MICE). Self-organized AgNPs with peculiarly shape were synthesized by an electroless plating method in a conventional aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. AgNP nuclei were densely created on Si wafer surface, and they had a strong tendency to merge and form continuous metal films with increasing AgNO3 concentrations. Also, we have demonstrated that the fabrication of aligned Si nanowire (SiNW) arrays in large area of p-Si (111) substrates by MICE in a mixture of HF and hydrogen peroxide (H2O2) solution. We have found that the morphology of the initial AgNPs and oxidant concentration (H2O2) greatly influence on the shape of the SiNW etching profile. The morphological results showed that AgNP shapes were closely related to the etching direction of SiNWs, that is, the spherical AgNPs preferred to move vertical to the Si substrate, whereas non-spherical AgNPs changed their movement to the [100] directions. In addition, as the etching activity was increased at higher H2O2 concentrations, AgNPs had a tendency to move from the original [111] direction to the energetically preferred [100] direction. PMID:23858934

  13. Metal-assisted chemical etch porous silicon formation method

    DOEpatents

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  14. Etching of mercuric iodide in cation iodide solutions

    NASA Astrophysics Data System (ADS)

    Ponpon, J. P.; Amann, M.

    2006-07-01

    The surface properties of mercuric iodide after etching in various cation iodide solutions have been investigated in terms of dissolution rate, morphology, electrical properties and reaction with water vapour. No significant differences have been observed in the etching rates. However, dissolution of HgI 2 in NH 4I, NaI, KI or RbI leaves the surface more or less covered with a residual iodo mercurate compound whose electrical properties and stability with regard to humidity may noticeably influence the behaviour of mercuric iodide devices. The smallest effect has been observed for etching in NaI.

  15. Rapid recipe formulation for plasma etching of new materials

    NASA Astrophysics Data System (ADS)

    Chopra, Meghali; Zhang, Zizhuo; Ekerdt, John; Bonnecaze, Roger T.

    2016-03-01

    A fast and inexpensive scheme for etch rate prediction using flexible continuum models and Bayesian statistics is demonstrated. Bulk etch rates of MgO are predicted using a steady-state model with volume-averaged plasma parameters and classical Langmuir surface kinetics. Plasma particle and surface kinetics are modeled within a global plasma framework using single component Metropolis Hastings methods and limited data. The accuracy of these predictions is evaluated with synthetic and experimental etch rate data for magnesium oxide in an ICP-RIE system. This approach is compared and superior to factorial models generated from JMP, a software package frequently employed for recipe creation and optimization.

  16. Micromorphology of ceramic etching pattern for two CAD-CAM and one conventional feldspathic porcelain and need for post-etching cleaning.

    PubMed

    Onisor, Ioana; Rocca, Giovanni Tommaso; Krejci, Ivo

    2014-01-01

    The aim of this in vitro study was to observ