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Sample records for acid etching technique

  1. A Comparison of Shear Bond Strengths of Metal and Ceramic Brackets using Conventional Acid Etching Technique and Er:YAG Laser Etching

    PubMed Central

    Yassaei, Sogra; Fekrazad, Reza; Shahraki, Neda; Goldani Moghadam, Mahdjoube

    2014-01-01

    Background and aims. The aim of this study was to compare shear bond strength (SBS) of metal and ceramic brackets bonded to enamel using acid versus Er:YAG laser etching. Materials and methods. Eighty premolars were divided into 4 groups: AM (acid etching/ metal brackets), AC (acid etching/ ceramic brackets), LM (laser etching/ metal brackets) and LC (laser etching/ ceramic brackets). Enamel condition-ing was done using acid in AC and AM and Er:YAG laser in LC and LM. Brackets were debonded with a Dartec machine and the SBSs were determined. Adhesive remnant index was evaluated under a stereomicroscope. Two additional teeth were conditioned with acid and laser for scanning electron microscopy examination. Comparisons of SBS value were done by ANOVA test. Results. statistical analyses showed that SBSs of acid groups were significantly higher than that of laser groups, but dif-ferences between SBS values of AC/ AM and LC/LM were not significant. SEM examination revealed different etching pattern. Conclusion. Low power Er:YAG laser etching offers clinically acceptable SBS which besides its other superiorities to acid etching can be an appropriate alternative for bonding of ceramic brackets. PMID:25024836

  2. In vitro evaluation of microleakage under orthodontic brackets using two different laser etching, self etching and acid etching methods.

    PubMed

    Hamamci, Nihal; Akkurt, Atilim; Başaran, Güvenç

    2010-11-01

    This study evaluated the microleakage of brackets bonded by four different enamel etching techniques. Forty freshly extracted human premolars were divided randomly into four equal groups and received the following treatment: group 1, acid etching; group 2, self-etching primer (SEP); group 3, erbium:yttrium-aluminum-garnet (Er:YAG) laser etching; and group 4, erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser etching. After photopolymerization, the teeth were kept in distilled water for 1 month and then subjected to 500 thermal cycles. Then, the specimens were sealed with nail varnish, stained with 0.5% basic fuchsin for 24 h, sectioned, and examined under a stereomicroscope. In addition, they were scored for marginal microleakage at the adhesive-enamel and bracket-adhesive interfaces from the incisal and gingival margins. Statistical analyses consisted of the Kruskal-Wallis test and the Mann-Whitney U test with Bonferroni correction. Microleakage occurred between the adhesive-enamel and bracket-adhesive interfaces in all groups. For the adhesive-enamel surface, a significant difference was observed between group 1 and groups 2 (P = 0.011), 3 (P = 0.002), and 4 (P = 0.000) on the gingival side. Overall, significant differences were observed between group 1 and groups 3 (P = 0.003) and 4 (P = 0.000). In dental bonding procedures, acid etching was found to result in the least microleakage. Since etching with a laser decreases the risk of caries and is time-saving, it may serve as an alternative to acid etching. PMID:19562404

  3. Patterning enhancement techniques by reactive ion etch

    NASA Astrophysics Data System (ADS)

    Honda, Masanobu; Yatsuda, Koichi

    2012-03-01

    The root causes of issues in state-of-the-arts resist mask are low plasma tolerance in etch and resolution limit in lithography. This paper introduces patterning enhancement techniques (PETs) by reactive ion etch (RIE) that solve the above root causes. Plasma tolerance of resist is determined by the chemical structure of resin. We investigated a hybrid direct current (DC) / radio frequency (RF) RIE to enhance the plasma tolerance with several gas chemistries. The DC/RF hybrid RIE is a capacitive coupled plasma etcher with a superimposed DC voltage, which generates a ballistic electron beam. We clarified the mechanism of resist modification, which resulted in higher plasma tolerance[1]. By applying an appropriate gas to DC superimposed (DCS) plasma, etch resistance and line width roughness (LWR) of resist were improved. On the other hand, RIE can patch resist mask. RIE does not only etch but also deposits polymer onto the sidewall with sedimentary type gases. In order to put the deposition technique by RIE in practical use, it is very important to select an appropriate gas chemistry, which can shrink CD and etch BARC. By applying this new technique, we successfully fabricated a 35-nm hole pattern with a minimum CD variation.

  4. Technique for etching monolayer and multilayer materials

    DOEpatents

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  5. Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch-Resistant Material

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Akira; Hinoura, Ryo; Toyoda, Noriaki; Hara, Ken-ichi; Yamada, Isao

    2013-05-01

    Gas cluster ion beam (GCIB) etching of etch-resistant materials under acetic acid vapor was studied for development of new manufacturing process of future nonvolatile memory. Etching depths of various etch-resistant materials (Pt, Ru, Ta, CoFe) with acetic acid vapor during O2-GCIB irradiations were 1.8-10.7 times higher than those without acetic acid. Also, etching depths of Ru, Ta, CoFe by Ar-GCIB with acetic acid vapor were 2.2-16.1 times higher than those without acetic acid. Even after etching of Pt, smoothing of Pt was realized using O2-GCIB under acetic acid. From XPS and angular distribution of sputtered Pt, it was shown that PtOx layer was formed on Pt after O2-GCIB irradiation. PtOx reacted with acetic acid by GCIB bombardments; as a result, increase of etching depth was observed.

  6. SEM ANALYSIS OF THE ACID-ETCHED ENAMEL PATTERNS PROMOTED BY ACIDIC MONOMERS AND PHOSPHORIC ACIDS

    PubMed Central

    Shinohara, Mirela Sanae; de Oliveira, Marcelo Tavares; Hipólito, Vinícius Di; Giannin, Marcelo; de Goes, Mario Fernando

    2006-01-01

    Objective: Although self-etching bonding systems (SES) are indicated to prepare dental enamel for bonding, concerns have been expressed regarding their effectiveness. The aim of this study was to analyze the etching pattern (EP) of nine SES in comparison with 35% and 34% phosphoric acid etchants (FA) on intact (IN) and ground (GR) enamel surface. Materials and Methods: Twenty-two human third molars were sectioned in mesial-distal and buccal-lingual directions, and four dental fragments were obtained from each tooth. Half of the fragments were ground using 600-grit SiC paper and the other half remained intact. The fragments were randomly assigned into 22 groups, according to the texture of enamel surface (IN and GR) and the technique to etch the enamel (34% FA, 35% FA, AdheSE primer; Brush & Bond; Clearfil Protect Bond primer; iBond; One-up Bond F; OptiBond Solo Plus primer; Tyrian SPE primer; Unifil Bond primer and Xeno III). Conditioners were applied to IN and GR enamel surfaces, according to the manufacturer's instructions. Specimens etched with phosphoric acids were washed with water, while the surfaces treated with SES were submitted to alternate rinsing with alcohol and acetone. The specimens were dried, sputter-coated and examined under a scanning electron microscope. Results: For both IN and GR enamel surfaces, the EP of 34 and 35% FA was deeper and more homogeneous in comparison to EP of SES, except for Tyrian SPE. The acidic monomer action of self-etching systems was more effective on GR enamel. Conclusion: Most of the SES are less aggressive than phosphoric acid etchants and their etching effects were reduced on intact enamel surfaces. Uniterms: Dental acid etching; Dental enamel; Electron microscopy. PMID:19089243

  7. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  8. The research on conformal acid etching process of glass ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  9. Acid-etched splinting to a ceramometal abutment.

    PubMed

    Jordan, R D; Aquilino, S A; Krell, K V

    1986-05-01

    This technique describes an acid-etch metal splint with a ceramometal abutment. The internal surface of the DuraLingual Wing Form patterns provide undercuts necessary for composite bonding. The external surface provides a smooth solid metal surface when cast. Since this system uses mechanical undercuts, the resin-bonded splints can have multiple try-ins without the detrimental effects of burnishing and contamination that occur with electrolytically etched metal surfaces. If an abutment for a resin-retained fixed partial denture requires a ceramometal crown, a DuraLingual Wing Form can be incorporated onto its lingual surface thereby providing mechanical undercuts for bonding. The opposite undercuts of the crown and splint provide excellent bond strength for the system. PMID:3519944

  10. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  11. Rapid analysis of acid in etching and pickling solutions

    SciTech Connect

    Tumbina, V.P.; Chinokalov, V.Ya.

    1995-02-01

    A computational method for determining sulfuric and hydrochloric acids in two-component etching solutions has been proposed. The method makes use of linear relationships, assuming that the sum of free and bound acid in solution remains constant.

  12. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    NASA Astrophysics Data System (ADS)

    Costescu, Ruxandra M.; Deneke, Christoph; Thurmer, Dominic J.; Schmidt, Oliver G.

    2009-12-01

    The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  13. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    PubMed

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (p<0.05) SBS and SFL with pre-etching than it did without pre-etching. The SBS and SFL of dentin bonds decreased with phosphoric acid pre-etching. The SBS and SFL of bonds using phosphoric acid prior to application of self-etching adhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was

  14. Evaluation of over-etching technique in the endodontically treated tooth restoration

    PubMed Central

    Migliau, Guido; Piccoli, Luca; Besharat, Laith Konstantinos; Di Carlo, Stefano; Pompa, Giorgio

    2015-01-01

    Summary The main purpose of a post-endodontic restoration with posts is to guarantee the retention of the restorative material. The aim of the study was to examine, through the push-out test, how bond strength between the post and the dentin varied with etching time with 37% orthophosphoric acid, before cementation of a glass fiber post. Moreover, it has been examined if over-etching (application time of the acid: 2 minutes) was an effective technique to improve the adhesion to the endodontic substrate, after highlighting the problems of adhesion concerning its anatomical characteristics and the changes after the endodontic treatment. Highest bond strength values were found by etching the substrate for 30 sec., while over-etching didn’t improve bond strength to the endodontic substrate. PMID:26161247

  15. In-office technique for selectively etching titanium abutments to improve bonding for interim implant prostheses.

    PubMed

    Wadhwani, Chandur; Chung, Kwok-Hung

    2016-03-01

    A technique is described for increasing the surface area of a titanium abutment with hydrofluoric acid etching. This provides mechanical retention for acrylic resin and composite resins and can be easily and rapidly accomplished in both the laboratory and clinic. PMID:26553255

  16. Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

    NASA Technical Reports Server (NTRS)

    Nguyen, Hung D.

    1999-01-01

    Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

  17. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    NASA Technical Reports Server (NTRS)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  18. Plasma and ion etching for failure analysis. Part 1: Review of current theory and techniques

    NASA Astrophysics Data System (ADS)

    Hardman, M.; Mapper, D.; Farren, J.; Stephen, J. H.

    1985-07-01

    The state-of-the-art for the etching of semiconductor device materials, as applied to failure analysis, is reviewed. The basic mechanisms and techniques of dry etching were studied. Process parameters, such as rf power, gas mixture, pressure, and temperature and their effect on the etch process are reported. The Giga-Etch 100 E method of dry etching is recommended. Equipment available on the market is listed.

  19. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    DOEpatents

    Not Available

    1980-05-28

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking is described. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  20. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    DOEpatents

    Steeves, Arthur F.; Stewart, James C.

    1981-01-01

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  1. Thermal reactive ion etching technique involving use of self-heated cathode

    SciTech Connect

    Yamada, S.; Minami, Y.; Sohgawa, M.; Abe, T.

    2015-04-15

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF{sub 6} plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source.

  2. Thermal reactive ion etching technique involving use of self-heated cathode

    NASA Astrophysics Data System (ADS)

    Yamada, S.; Minami, Y.; Sohgawa, M.; Abe, T.

    2015-04-01

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF6 plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source.

  3. Thermal reactive ion etching technique involving use of self-heated cathode.

    PubMed

    Yamada, S; Minami, Y; Sohgawa, M; Abe, T

    2015-04-01

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF6 plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source. PMID:25933887

  4. In situ technique for measurement and control of transistor characteristics during remote plasma etching

    NASA Astrophysics Data System (ADS)

    Lishan, David; Hu, Evelyn

    1991-09-01

    In situ electrical monitoring has been carried out in a remote plasma etching system allowing accurate control of device electrical parameters. We have used this technique to gate recess-etch two different high electron mobility transistor structures while recording device source-drain I-V characteristics throughout the etching. Current versus etching time data and time elapsed I-V curves are presented.

  5. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    PubMed Central

    Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh

    2014-01-01

    Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS) and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG) laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under ×10 magnification and adhesive remnant index (ARI) score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa) was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa) (P = 0.41). There was no significant difference in the ARI scores between two groups (P = 0.08). However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching. PMID:25097641

  6. Focused electron beam induced etching of copper in sulfuric acid solutions

    NASA Astrophysics Data System (ADS)

    Boehme, Lindsay; Bresin, Matthew; Botman, Aurélien; Ranney, James; Hastings, J. Todd

    2015-12-01

    We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

  7. Simplified Etching

    ERIC Educational Resources Information Center

    Saranovitz, Norman S.

    1969-01-01

    The process for making a celluoid etching (drypaint technique) is feasible for the high school art room because the use of acid is avoided. The procedure outlined includes; 1) preparation of the plate, 2) inking the plate, 3) printing the plate, 4) tools necessary for the preceding. (BF)

  8. Acid-etched Fabry-Perot micro-cavities in optical fibres

    NASA Astrophysics Data System (ADS)

    Machavaram, V. R.; Badcock, R. A.; Fernando, G. F.

    2007-07-01

    Significant progress has been made in recent years on the design and fabrication of optical fibre-based sensor systems for applications in structural health monitoring. Two sensor designs have tended to dominate namely, fibre Bragg gratings and extrinsic fibre Fabry-Perot sensors. However, the cost and time associated with these sensors is relatively high and as a consequence, the current paper describes a simple procedure to fabricate intrinsic fibre Fabry-Perot interferometric strain sensors. The technique involves the use of hydrofluoric acid to etch a cavity in a cleaved optical fibre. Two such etched cavities were fusion spliced to create an intrinsic fibre Fabry-Perot cavity. The feasibility of using this device for strain monitoring was demonstrated. Excellent correlation was obtained between the optical and surface-mounted electrical resistance strain gauge.

  9. Shear bond strength and debonding characteristics of metal and ceramic brackets bonded with conventional acid-etch and self-etch primer systems: An in-vivo study

    PubMed Central

    Mirzakouchaki, Behnam; Sharghi, Reza; Shirazi, Samaneh; Moghimi, Mahsan; Shahrbaf, Shirin

    2016-01-01

    Background Different in-vitro studies have reported various results regarding shear bond strength (SBS) of orthodontic brackets when SEP technique is compared to conventional system. This in-vivo study was designed to compare the effect of conventional acid-etching and self-etching primer adhesive (SEP) systems on SBS and debonding characteristics of metal and ceramic orthodontic brackets. Material and Methods 120 intact first maxillary and mandibular premolars of 30 orthodontic patients were selected and bonded with metal and ceramic brackets using conventional acid-etch or self-etch primer system. The bonded brackets were incorporated into the wire during the study period to simulate the real orthodontic treatment condition. The teeth were extracted and debonded after 30 days. The SBS, debonding characteristics and adhesive remnant indices (ARI) were determined in all groups. Results The mean SBS of metal brackets was 10.63±1.42 MPa in conventional and 9.38±1.53 MPa in SEP system, (P=0.004). No statistically significant difference was noted between conventional and SEP systems in ceramic brackets. The frequency of 1, 2 and 3 ARI scores and debonding within the adhesive were the most common among all groups. No statistically significant difference was observed regarding ARI or failure mode of debonded specimens in different brackets or bonding systems. Conclusions The SBS of metal brackets bonded using conventional system was significantly higher than SEP system, although the SBS of SEP system was clinically acceptable. No significant difference was found between conventional and SEP systems used with ceramic brackets. Total SBS of metal brackets was significantly higher than ceramic brackets. Due to adequate SBS of SEP system in bonding the metal brackets, it can be used as an alternative for conventional system. Key words:Shear bond strength, Orthodontic brackets, Adhesive remnant index, self-etch. PMID:26855704

  10. Investigation of etching techniques for superconductive Nb/Al-Al2O3/Nb fabrication processes

    NASA Technical Reports Server (NTRS)

    Lichtenberger, A. W.; Lea, D. M.; Lloyd, F. L.

    1993-01-01

    Wet etching, CF4 and SF6 reactive ion etching (RIE), RIE/wet hybrid etching, Cl-based RIE, ion milling, and liftoff techniques have been investigated for use in superconductive Nb/Al-Al2O3/Nb fabrication processes. High-quality superconductor-insulator-superconductor (SIS) junctions have been fabricated using a variety of these etching methods; however, each technique offers distinct tradeoffs for a given process an wafer design. In particular, it was shown that SF6 provides an excellent RIE chemistry for low-voltage anisotropic etching of Nb with high selectivity to Al. The SF6 tool has greatly improved the trilevel resist junction insulation process. Excellent repeatability, selectivity with respect to quartz, and submicron resolution make Cl2 + BCl3 + CHCl3 RIE a very attractive process for trilayer patterning.

  11. Mechanical Properties of Thermoplastic Polyurethanes Laminated Glass Treated by Acid Etching Combined with Cold Plasma

    NASA Astrophysics Data System (ADS)

    Li, Xibao; Lu, Jinshan; Luo, Junming; Zhang, Jianjun; Ou, Junfei; Xu, Haitao

    2014-10-01

    To overcome the problem of interlaminar delamination of thermoplastic polyurethane laminated glass, silicate glass was etched with hydrofluoric acid and thermoplastic polyurethane was then treated with cold plasma. Compared with the untreated samples, the interlaminar shear strength of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 97%, 84% and 341%, respectively. Acid etching combined with cold plasma-treated samples exhibited a higher flexural strength and strain as compared with the untreated samples. The impact energy of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 8.7%, 8.1% and 11.6%, respectively, in comparison with the untreated samples. FT-IR analysis showed that a large number of -C=O, -CO-N and -CO-O-C- groups appeared on the surface of cold plasma-treated thermoplastic polyurethane, which resulted in the formation of hydrogen bonds. SEM results showed that some pittings formed on the surface of the silicate glass treated by acid etching, which resulted in the formation of a three-dimensional interface structure between the silicate glass and polyurethane. Hydrogen bonds combined with the three-dimensional interface between silicate glass and polyurethanes co-improved the mechanical properties of thermoplastic polyurethanes laminated glass.

  12. Behavior of acid etching on titanium: topography, hydrophility and hydrogen concentration.

    PubMed

    Lin, Xi; Zhou, Lei; Li, Shaobing; Lu, Haibin; Ding, Xianglong

    2014-02-01

    Since acid etching is easily controlled and effective, it has become one of the most common methods of surface modification. However, the behavior of etching is seldom discussed. In this study, different surfaces of titanium were prepared by changing the etching temperature and time. Surface topography, roughness, contact angles, surface crystalline structure, hydrogen concentration and mechanical properties were observed. As a result, surface topography and roughness were more proportional to etching temperature; however, diffusion of hydrogen and tensile strength are more time-related to titanium hydride formation on the surface. Titanium becomes more hydrophilic after etching even though the micropits were not formed after etching. More and deeper cracks were found on the specimens with more hydrogen diffusion. Therefore, higher temperature and shorter time are an effective way to get a uniform surface and decrease the diffusion of hydrogen to prevent hydrogen embrittlement. PMID:24343349

  13. Investigation of laser-induced etching of Ti in phosphoric acid

    SciTech Connect

    Nowak, R.J.; Metev, S.M.; Meteva, K.B.; Sepold, G.

    1996-12-31

    Laser-induced chemical etching of Ti in phosphoric acid has been investigated using cw Nd:YAG (1.064 {micro}m) and Argon lasers (514 nm) operating in the fundamental Gaussian mode. Two different regions of etching were observed, which are separated by a characteristic threshold value of the laser power and ascribed to melting of the metal. Below the threshold an exponential dependence of etch rates on laser power suggest a thermally activated etching mechanism. Time-resolved measurements indicate in this region the dissolution of the passivation layer followed by surface etching of the metal grains. After laser illumination an immediate repassivation of the recooled surface stops the etch reaction.

  14. In vitro bonding effectiveness of self-etch adhesives with different application techniques: A microleakage and scanning electron microscopic study

    PubMed Central

    Nagpal, Rajni; Manuja, Naveen; Tyagi, Shashi Prabha; Singh, Udai Pratap

    2011-01-01

    Aim: To evaluate and compare the microleakage of self-etch adhesives placed under different clinical techniques and to analyze the resin–dentin interfacial ultrastructure under scanning electron microscope (SEM). Materials and Methods: 100 extracted human premolars were divided into two groups for different adhesives (Clearfil S3 and Xeno III). Class V cavities were prepared. Each group was further divided into four subgroups (n = 10) according to the placement technique of the adhesive, i.e. according to manufacturer's directions (Group 1), with phosphoric acid etching of enamel margins (Group 2), with hydrophobic resin coat application (Group 3), with techniques of both groups 2 and 3 (Group 4). The cavities were restored with composite. Ten samples from each group were subjected to microleakage study. Five samples each of both the adhesives from groups 1 and 3 were used for SEM examination of the micromorphology of the resin–dentin interface. Results: At enamel margins for both the adhesives tested, groups 2 and 4 showed significantly lesser leakage than groups 1 and 3. At dentin margins, groups 3 and 4 depicted significantly reduced leakage than groups 1 and 2 for Xeno III. SEM observation of the resin–dentin interfaces revealed generalized gap and poor resin tag formation in both the adhesives. Xeno III showed better interfacial adaptation when additional hydrophobic resin coat was applied. Conclusions: In enamel, prior phosphoric acid etching reduces microleakage of self-etch adhesives, while in dentin, hydrophobic resin coating over one-step self-etch adhesives decreases the microleakage. PMID:22025829

  15. NOTE: Investigation of a copper etching technique to fabricate metallic gas diffusion media

    NASA Astrophysics Data System (ADS)

    Zhang, Feng-Yuan; Prasad, Ajay K.; Advani, Suresh G.

    2006-11-01

    A new fabrication technique based on etching is employed to convert a copper foil into a porous structure with an array of micron size pores. The motivation stems from the need to develop a more efficient and controllable gas diffusion medium for fuel cell applications. The influence of mask shape, mask width and etching time was investigated experimentally. A correlation to predict trench width with etching time was derived; normalizing by mask width allows one to collapse the data. The etching rates to obtain micro-scale features, which are of the order of 1 2 µm min 1, are mainly dominated by the mask width due to mass-transport resistance. It is possible to control the pore dimensions, porosity and pore size distributions with this technique.

  16. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    PubMed Central

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20% ± 10.89%) was much greater than those of machined (33.58% ± 8.63%), SLA (58.47% ± 12.89), or ANO Ti (59.62% ± 18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  17. Cell adhesion and in vivo osseointegration of sandblasted/acid etched/anodized dental implants.

    PubMed

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20%±10.89%) was much greater than those of machined (33.58%±8.63%), SLA (58.47%±12.89), or ANO Ti (59.62%±18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  18. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    NASA Astrophysics Data System (ADS)

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  19. Effects of acid-etching solutions on human enamel and dentin.

    PubMed

    Fanchi, M; Breschi, L

    1995-06-01

    Nine noncarious human molars were extracted and stored in saline solution. Three standard occlusal cavities with beveled enamel margins were prepared on each tooth and etched with the etching solutions of three dentinal adhesive systems: (1) 37% phosphoric acid solution, (2) 4.3% oxalic acid and 2.6% aluminum salts solution, and (3) 10% maleic acid solution. Scanning electron microscopic analysis revealed that all the etching solutions affected the enamel surface morphology. The solution of oxalic acid and aluminum salts removed primarily the prism core material and partially the periphery of the prisms, but did not affect the nonbeveled enamel surface. Phosphoric and maleic acids removed both prism core materials and prism periphery; these specimens also showed areas in which no prism morphology could be detected. These two acids also removed apatite crystals from the prism core of the intact enamel surface. PMID:8602425

  20. Efficient process development for bulk silicon etching using cellular automata simulation techniques

    NASA Astrophysics Data System (ADS)

    Marchetti, James; He, Yie; Than, Olaf; Akkaraju, Sandeep

    1998-09-01

    This paper describes cellular automata simulation techniques used to predict the anisotropic etching of single-crystal silicon. In particular, this paper will focus on the application of wet etching of silicon wafers using typical anisotropic etchants such as KOH, TMAH, and EDP. Achieving a desired final 3D geometry of etch silicon wafers often is difficult without requiring a number of fabrication design iterations. The result is wasted time and resources. AnisE, a tool to simulate anisotropic etching of silicon wafers using cellular automata simulation, was developed in order to efficiently prototype and manufacture MEMS devices. AnisE has been shown to effectively decrease device development time and costs by up to 50% and 60%, respectively.

  1. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    SciTech Connect

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  2. Acid Solutions for Etching Corrosion-Resistant Metals

    NASA Technical Reports Server (NTRS)

    Simmons, J. R.

    1982-01-01

    New study characterized solutions for etching austenitic stainless steels, nickel-base alloys, and titanium alloys (annealed). Solutions recommended for use remove at least 0.4 mil of metal from surface in less than an hour. Solutions do not cause intergranular attack on metals for which they are effective, when used under specified conditions.

  3. Improving Pyroelectric Energy Harvesting Using a Sandblast Etching Technique

    PubMed Central

    Hsiao, Chun-Ching; Siao, An-Shen

    2013-01-01

    Large amounts of low-grade heat are emitted by various industries and exhausted into the environment. This heat energy can be used as a free source for pyroelectric power generation. A three-dimensional pattern helps to improve the temperature variation rates in pyroelectric elements by means of lateral temperature gradients induced on the sidewalls of the responsive elements. A novel method using sandblast etching is successfully applied in fabricating the complex pattern of a vortex-like electrode. Both experiment and simulation show that the proposed design of the vortex-like electrode improved the electrical output of the pyroelectric cells and enhanced the efficiency of pyroelectric harvesting converters. A three-dimensional finite element model is generated by commercial software for solving the transient temperature fields and exploring the temperature variation rate in the PZT pyroelectric cells with various designs. The vortex-like type has a larger temperature variation rate than the fully covered type, by about 53.9%.The measured electrical output of the vortex-like electrode exhibits an obvious increase in the generated charge and the measured current, as compared to the fully covered electrode, by of about 47.1% and 53.1%, respectively. PMID:24025557

  4. Improving pyroelectric energy harvesting using a sandblast etching technique.

    PubMed

    Hsiao, Chun-Ching; Siao, An-Shen

    2013-01-01

    Large amounts of low-grade heat are emitted by various industries and exhausted into the environment. This heat energy can be used as a free source for pyroelectric power generation. A three-dimensional pattern helps to improve the temperature variation rates in pyroelectric elements by means of lateral temperature gradients induced on the sidewalls of the responsive elements. A novel method using sandblast etching is successfully applied in fabricating the complex pattern of a vortex-like electrode. Both experiment and simulation show that the proposed design of the vortex-like electrode improved the electrical output of the pyroelectric cells and enhanced the efficiency of pyroelectric harvesting converters. A three-dimensional finite element model is generated by commercial software for solving the transient temperature fields and exploring the temperature variation rate in the PZT pyroelectric cells with various designs. The vortex-like type has a larger temperature variation rate than the fully covered type, by about 53.9%.The measured electrical output of the vortex-like electrode exhibits an obvious increase in the generated charge and the measured current, as compared to the fully covered electrode, by of about 47.1% and 53.1%, respectively. PMID:24025557

  5. Bone contact around acid-etched implants: a histological and histomorphometrical evaluation of two human-retrieved implants.

    PubMed

    Degidi, Marco; Petrone, Giovanna; Iezzi, Giovanna; Piattelli, Adriano

    2003-01-01

    The surface characteristics of dental implants play an important role in their clinical success. One of the most important surface characteristics of implants is their surface topography or roughness. Many techniques for preparing dental implant surfaces are in clinical use: turning, plasma spraying, coating, abrasive blasting, acid etching, and electropolishing. The Osseotite surface is prepared by a process of thermal dual etching with hydrochloric and sulfuric acid, which results in a clean, highly detailed surface texture devoid of entrapped foreign material and impurities. This seems to enhance fibrin attachment to the implant surface during the clotting process. The authors retrieved 2 Osseotite implants after 6 months to repair damage to the inferior alveolar nerve. Histologically, both implants appeared to be surrounded by newly formed bone. No gaps or fibrous tissues were present at the interface. The mean bone-implant contact percentage was 61.3% (+/- 3.8%). PMID:12614080

  6. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    PubMed Central

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

    0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  7. Noble Gases and Nitrogen Released from a Lunar Soil Pyroxene Separate by Acid Etching

    NASA Astrophysics Data System (ADS)

    Rider, P. E.

    1993-07-01

    We report initial results from a series of experiments designed to measure recently implanted solar wind (SW) ions in lunar soil mineral grains [1]. An acid-etching technique similar to the CSSE method developed at ETH Zurich was used to make abundance and isotope measurements of the SW noble gas and nitrogen compositions. Among the samples examined was a pyroxene separate from soil 75081. It was first washed with H2O to remove contamination from the sample finger walls and grain surfaces. H2O also acted as a weak acid, releasing gases from near-surface sites. Treatment with H2SO3 followed the water washes. Acid pH (~1.8 to ~1.0) and temperature (~23 degrees C to ~90 degrees C) and duration of acid attack (several minutes to several days) were varied from step to step. Finally, the sample was pyrolyzed in several steps to remove the remaining gases, culminating with a high-temperature pyrolysis at 1200 degrees C. Measurements of the light noble gases were mostly consistent with those from previous CSSE experiments performed on pyroxene [2,3]. It should be noted, however, that the Zurich SEP component was not easily distinguishable in the steps where it was expected to be observed. We suspect our experimental protocol masked the SEP reservoir, preventing us from seeing its distinctive signature. The most interesting results from this sample are its Kr and Xe isotopic and elemental compositions. Pyroxene apparently retains heavy noble gases as well as ilmenite (and plagioclase [4]). The heavy noble gas element ratios from this sample along with those previously reported [5,6] are, however, considerably heavier than the theoretically determined "solar system" values [7,8]. Explanations for the difference include the possibility that the derivations are incorrect, that there is another component of lunar origin mixing with the solar component, or that some type of loss mechanism is altering the noble gas reservoirs of the grains. The Kr and Xe isotopic compositions for

  8. Creation of hollow SAPO-34 single crystals via alkaline or acid etching.

    PubMed

    Qiao, Yuyan; Yang, Miao; Gao, Beibei; Wang, Linying; Tian, Peng; Xu, Shutao; Liu, Zhongmin

    2016-04-14

    Hollow SAPO-34 crystals are created via selective etching of their precursor under controlled alkaline or acid conditions. The abundant/interconnected Si-O-Al domains and Si-O-Si networks at the outer layer of SAPO-34 crystals are revealed to be decisive factors for the base and acid treatments respectively to achieve a well-preserved hollow structure. PMID:27042708

  9. Surface characterization of alkali- and heat-treated Ti with or without prior acid etching

    NASA Astrophysics Data System (ADS)

    An, Sang-Hyun; Matsumoto, Takuya; Miyajima, Hiroyuki; Sasaki, Jun-Ichi; Narayanan, Ramaswamy; Kim, Kyo-Han

    2012-03-01

    Titanium and its alloys are used as implant materials in dental and orthopaedic applications. The material affinities to host bone tissue greatly concern with the recovery period and good prognosis. To obtain a material surface having excellent affinity to bone, acid etching prior to alkali- and heat-treatment of Ti was conducted. The surface characteristics of the prepared sample indicated that the roughness as well as the wettability increased by pre-etching. Bone-like apatite was formed on pre-etched, alkali- and heat-treated Ti surface in simulated body fluid (SBF) within 3 days, while it takes 5 days on the solely alkali- and heat-treated surface. Osteoblastic cells showed better compatibility on the per-etched surface compared to the pure Ti surface or alkali- and heat-treated surface. Moreover, the pre-etched surface showed better pull-off tensile adhesion strength against the deposited apatite. Thus, acid etching prior to alkali- and heat-treatment would be a promising method for enhancing the affinity of Ti to host bone tissue.

  10. Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

    NASA Astrophysics Data System (ADS)

    Yamanaka, Ryota; Kanazawa, Toru; Yagyu, Eiji; Miyamoto, Yasuyuki

    2015-06-01

    A normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) with a recessed-gate structure fabricated by novel digital etching is reported. Digital etching consists of multiple cycles of oxidation and wet etching of the oxide, and has the merits of easy control of the recess depth and reduction of surface damage in comparison with conventional dry etching. However, in conventional digital etching, the oxidation process involves the possibility of undercutting. In the digital etching, a reactive ion etcher was used and recess etching without any undercut was confirmed. Normally-off operation and the improvement of transconductance were confirmed in an AlGaN/GaN HEMT fabricated by this technique.

  11. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm × 5 mm × 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37℃ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (α=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 ± 1.94 MPa) and Group 3 (3.65 ± 1.87 MPa) than in Control group (1.95 ± 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 ± 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 ± 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  12. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    NASA Astrophysics Data System (ADS)

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  13. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  14. EFFECT OF ACID ETCHING OF GLASS IONOMER CEMENT SURFACE ON THE MICROLEAKAGE OF SANDWICH RESTORATIONS

    PubMed Central

    Bona, Álvaro Della; Pinzetta, Caroline; Rosa, Vinícius

    2007-01-01

    The purposes of this study were to evaluate the sealing ability of different glass ionomer cements (GICs) used for sandwich restorations and to assess the effect of acid etching of GIC on microleakage at GIC-resin composite interface. Forty cavities were prepared on the proximal surfaces of 20 permanent human premolars (2 cavities per tooth), assigned to 4 groups (n=10) and restored as follows: Group CIE – conventional GIC (CI) was applied onto the axial and cervical cavity walls, allowed setting for 5 min and acid etched (E) along the cavity margins with 35% phosphoric acid for 15 s, washed for 30 s and water was blotted; the adhesive system was applied and light cured for 10 s, completing the restoration with composite resin light cured for 40 s; Group CIN – same as Group CIE, except for acid etching of the CI surface; Group RME – same as CIE, but using a resin modified GIC (RMGIC); Group RMN – same as Group RME, except for acid etching of the RMGIC surface. Specimens were soaked in 1% methylene blue dye solution at 24°C for 24 h, rinsed under running water for 1 h, bisected longitudinally and dye penetration was measured following the ISO/TS 11405-2003 standard. Results were statistically analyzed by Kruskal-Wallis and chi-square tests (α=0.05). Dye penetration scores were as follow: CIE – 2.5; CIN – 2.5; RME – 0.9; and RMN – 0.6. The results suggest that phosphoric acid etching of GIC prior to the placement of composite resin does not improve the sealing ability of sandwich restorations. The RMGIC was more effective in preventing dye penetration at the GIC-resin composite- dentin interfaces than CI. PMID:19089135

  15. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    PubMed Central

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  16. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    PubMed

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  17. Improving UV laser damage threshold of fused silica optics by wet chemical etching technique

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Li, Yaguo; Yuan, Zhigang; Wang, Jian; Xu, Qiao; Yang, Wei

    2015-07-01

    Fused silica is widely used in high-power laser systems because of its good optical performance and mechanical properties. However, laser damage initiation and growth induced by 355 nm laser illumination in optical elements have become a bottleneck in the development of high energy laser system. In order to improve the laser-induced damage threshold (LIDT), the fused silica optics were treated by two types of HF-based etchants: 1.7%wt. HF acid and buffer oxide etchant (BOE: the mixture of 0.4%wt. HF and 12%wt. NH4F), respectively, for varied etching time. Damage testing shows that both the etchants increase the damage threshold at a certain depth of material removal, but further removal of material lowers the LIDT markedly. The etching rates of both etchants keep steady in our processing procedure, ~58 μg/min and ~85 μg/min, respectively. The micro-surface roughness (RMS and PV) increases as etching time extends. The hardness (H) and Young's modulus (E) of the fused silica etched for diverse time, measured by nano-indenter, show no solid evidence that LIDT can be related to hardness or Young's modulus.

  18. A novel room temperature-induced chemical etching (RTCE) technique for the enlargement of fission tracks in Lexan polycarbonate SSNTD

    NASA Astrophysics Data System (ADS)

    Chavan, Vivek; Kalsi, P. C.; Manchanda, V. K.

    2011-02-01

    The chemical or electrochemical etching is an essential step to enlarge the ion-induced latent tracks in solid state nuclear track detectors (SSNTDs). In these methods, above ambient temperatures (˜60 °C) and moderately high concentrations of alkali are required for about 1-2 h to enlarge the latent tracks. Microwave induced chemical etching method is reported to reduce the etching time for alpha tracks from 3 to 4 h to 25 min for CR-39 detector. In the present work, a room temperature-induced chemical etching employing ethanolamine as a new etchant has been investigated for the first time to enlarge the fission tracks in Lexan polycarbonate SSNTD. The tracks developed in the Lexan detectors etched at room temperature using ethanolamine are compared with those etched with routinely used chemical etching (CE) technique in 6 N NaOH at 60 °C. The bulk etch and track etch rates are also reported. The detection efficiency of RTCE method is determined and compared with that of CE method. The RTCE technique is found to be simple, fast and convenient.

  19. A novel fabrication method of silicon nano-needles using MEMS TMAH etching techniques.

    PubMed

    Yan, Sheping; Xu, Yang; Yang, Junyi; Wang, Huiquan; Jin, Zhonghe; Wang, Yuelin

    2011-03-25

    Nano-needles play important roles in nanoscale operations. However, current nano-needle fabrication is usually expensive and controling the sizes and angles is complicated. We have developed a simple and low cost silicon nano-needle fabrication method using traditional microelectromechanical system (MEMS) tetramethyl ammonium hydroxide (TMAH) etching techniques. We take advantage of the fact that the decrease of the silicon etch rate in TMAH solutions exhibits an inverse fourth power dependence on the boron doping concentration in our nano-needle fabrication. Silicon nano-needles, with high aspect ratio and sharp angles θ as small as 2.9°, are obtained, which could be used for bio-sensors and nano-handling procedures, such as penetrating living cells. An analytic model is proposed to explain the etching evolution of the experimental results, which is used to predict the needle angle, length, and etching time. Based on our method, nano-needles with small acute angle θ can be obtained. PMID:21317492

  20. A novel fabrication method of silicon nano-needles using MEMS TMAH etching techniques

    NASA Astrophysics Data System (ADS)

    Yan, Sheping; Xu, Yang; Yang, Junyi; Wang, Huiquan; Jin, Zhonghe; Wang, Yuelin

    2011-03-01

    Nano-needles play important roles in nanoscale operations. However, current nano-needle fabrication is usually expensive and controling the sizes and angles is complicated. We have developed a simple and low cost silicon nano-needle fabrication method using traditional microelectromechanical system (MEMS) tetramethyl ammonium hydroxide (TMAH) etching techniques. We take advantage of the fact that the decrease of the silicon etch rate in TMAH solutions exhibits an inverse fourth power dependence on the boron doping concentration in our nano-needle fabrication. Silicon nano-needles, with high aspect ratio and sharp angles θ as small as 2.9°, are obtained, which could be used for bio-sensors and nano-handling procedures, such as penetrating living cells. An analytic model is proposed to explain the etching evolution of the experimental results, which is used to predict the needle angle, length, and etching time. Based on our method, nano-needles with small acute angle θ can be obtained.

  1. Temperature Rise Induced by Light Curing Unit Can Shorten Enamel Acid-Etching Time

    PubMed Central

    Najafi Abrandabadi, Ahmad; Sheikh-Al-Eslamian, Seyedeh Mahsa; Panahandeh, Narges

    2015-01-01

    Objectives: The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED) light curing unit on the enamel etching time. Materials and Methods: Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously). The micro shear bond strength (μSBS) of composite resin to enamel was measured. Results: The mean μSBS values ± standard deviation were 51.28±2.35, 40.47±2.75 and 50.00±2.59 MPa in groups 1, 2 and 3, respectively. There was a significant difference between groups 1 and 2 (P=0.013) and between groups 2 and 3 (P=0.032) in this respect, while there was no difference between groups 1 and 3 (P=0.932). Conclusion: Simultaneous application of phosphoric acid gel over enamel surface and light irradiation using a LED light curing unit decreased enamel etching time to five seconds without compromising the μSBS. PMID:27559352

  2. Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates

    NASA Astrophysics Data System (ADS)

    Nishikawa, Hironobu; Soga, Tetsuo; Mikuriya, Nobuo; Jimbo, Takashi; Umeno, Masayoshi

    1988-02-01

    Dislocations in GaAs and GaAs/Si are revealed by the etching technique at room temperature. The etchant is composed of H2O, K2Cr2O7, HNO3, HCl and H2SO4. The dislocation density of GaAs grown on Si by MOCVD using GaP and strained layer superlattices is about 1× 106 cm-2.

  3. Etching Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1983-01-01

    20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

  4. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  5. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity

  6. Scanning Acoustic Microscopy Investigation of Frequency-Dependent Reflectance of Acid-Etched Human Dentin Using Homotopic Measurements

    PubMed Central

    Marangos, Orestes; Misra, Anil; Spencer, Paulette; Katz, J. Lawrence

    2013-01-01

    Composite restorations in modern restorative dentistry rely on the bond formed in the adhesive-infiltrated acid-etched dentin. The physical characteristics of etched dentin are, therefore, of paramount interest. However, characterization of the acid-etched zone in its natural state is fraught with problems stemming from a variety of sources including its narrow size, the presence of water, heterogeneity, and spatial scale dependency. We have developed a novel homotopic (same location) measurement methodology utilizing scanning acoustic microscopy (SAM). Homotopic measurements with SAM overcome the problems encountered by other characterization/ imaging methods. These measurements provide us with acoustic reflectance at the same location of both the pre- and post-etched dentin in its natural state. We have applied this methodology for in vitro measurements on dentin samples. Fourier spectra from acid-etched dentin showed amplitude reduction and shifts of the central frequency that were location dependent. Through calibration, the acoustic reflectance of acid-etched dentin was found to have complex and non-monotonic frequency dependence. These data suggest that acid-etching of dentin results in a near-surface graded layer of varying thickness and property gradations. The measurement methodology described in this paper can be applied to systematically characterize mechanical properties of heterogeneous soft layers and interfaces in biological materials. PMID:21429849

  7. Acid etching does not improve CoCrMo implant osseointegration in a canine implant model.

    PubMed

    Jakobsen, Stig S; Baas, Jorgen; Jakobsen, Thomas; Soballe, Kjeld

    2010-01-01

    Induction of bone ingrowth by topographical changes to implant surfaces is an attractive concept. Topographical modifications achieved by acid etching are potentially applicable to complex 3D surfaces. Using clinically relevant implant models, we explored the effect of wet etching porous bead-coated CoCrMo. The study was designed as two paired animal experiments with 10 dogs. Each dog received four implants; one in each medial femoral condyle (loaded 0.75-mm-gap model) and one in each proximal tibia (press-fit). The implants were observed for 6 weeks and were evaluated by biomechanical pushout tests and histomorphometry. We found that wet etching porous bead-coated CoCrMo implants failed to improve implant performance. Moreover, a tendency towards increased fibrous tissue formation, decreased new bone formation, and decreased mechanical fixation was observed. Surface topography on implants is able to stimulate bone-forming cells, but the clinical performance of an implant surface perhaps relies more on 3D geometrical structure and biocompatibility. Caution should be exercised regarding the results of wet etching of porous bead-coated CoCrMo and there is a need for more preclinical trials. PMID:20544657

  8. Torque Analysis of a Triple Acid-Etched Titanium Implant Surface

    PubMed Central

    Pontes, Ana Emília Farias; de Toledo, Cássio Torres; Garcia, Valdir Gouveia; Ribeiro, Fernando Salimon; Sakakura, Celso Eduardo

    2015-01-01

    The present study aimed to evaluate the removal torque of titanium implants treated with triple acid etching. Twenty-one rats were used in this study. For all animals, the tibia was prepared with a 2 mm drill, and a titanium implant (2 × 4 mm) was inserted after treatment using the subtraction method of triple acid etching. The flaps were sutured. Seven animals were killed 14, 28, and 63 days after implant installation, and the load necessary for removing the implant from the bone was evaluated by using a torque meter. The torque values were as follows: 3.3 ± 1.7 Ncm (14 days), 2.2 ± 1.3 Ncm (28 days), and 6.7 ± 1.4 Ncm (63 days). The torque value at the final healing period (63 days) was statistically significantly different from that at other time points tested (ANOVA, p = 0.0002). This preliminary study revealed that treatment with triple acid etching can create a promising and efficient surface for the process of osseointegration. PMID:26543898

  9. PHOSPHATED, ACID-ETCHED IMPLANTS DECREASE MINERAL APPOSITION RATES NEAR IMPLANTS IN CANINES

    PubMed Central

    Foley, Christine Hyon; Kerns, David G.; Hallmon, William W.; Rivera-Hidalgo, Francisco; Nelson, Carl J.; Spears, Robert; Dechow, Paul C.; Opperman, Lynne A.

    2010-01-01

    Purpose: This study evaluated the effects of phosphate-coated titanium on mineral apposition rate (MAR) and new bone-to-implant contact (BIC) in canines. Materials and Methods: 2.2 mm × 4 mm electrolytically phosphated or non-phosphated titanium implants with acid-etched surfaces were placed in 48 mandibular sites in 6 foxhounds. Tetracycline and calcein dyes were administered 1 week after implant placement and 1 week before sacrifice. At twelve weeks following implant healing, animals were sacrificed. MAR and BIC were evaluated using fluorescence microscopy. Light microscopic and histological evaluation was performed on undecalcified sections. Results: Microscopic evaluation showed the presence of healthy osteoblasts lining bone surfaces near implants. Similar bone-to-implant contact was observed in phosphated and non-phosphated titanium implant sites. MAR was significantly higher near non-phosphated titanium implant surfaces than the phosphated titanium samples. No significant differences were found between dogs or implant sites. Discussion and Conclusion: Acid-etched only implants showed significantly higher mineral apposition rates compared to acid-etched, phosphate-coated implants. PMID:20369085

  10. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    PubMed Central

    STEINHAUSER, Henrique Caballero; TURSSI, Cecília Pedroso; FRANÇA, Fabiana Mantovani Gomes; do AMARAL, Flávia Lucisano Botelho; BASTING, Roberta Tarkany

    2014-01-01

    Objective The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8): C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results One-way ANOVA test showed no significant difference between treatments (p=0.3197) and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed. PMID:24676577

  11. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    PubMed Central

    Hoshing, Upendra A; Patil, Suvarna; Medha, Ashish; Bandekar, Siddhesh Dattatray

    2014-01-01

    Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M). In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M) was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply) was applied onto the test areas as a 3 × 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 ± 0.66MPa, range 25.155 to 27.150 MPa) was significantly higher (P < 0.01) than for laser-etched enamel (16.23 ± 0.71MPa, range 15.233 to 17.334 MPa). Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching. PMID:25125842

  12. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  13. Novel core etching technique of gold nanoparticles for colorimetric dopamine detection.

    PubMed

    Lee, Ho-Cheng; Chen, Tzu-Heng; Tseng, Wei-Lung; Lin, Che-Hsin

    2012-11-21

    This study develops a novel and high performance colorimetric probe for dopamine (DA) detection. Aqueous-phase gold nanoparticles (AuNPs) extracted with 4-(dimethylamino)pyridine (DMAP) from toluene solvent are used as the reaction probes. The original AuNPs of diameter around 13 nm separate into 2-5 nm sizes when dopamine (DA) is added, resulting in the color change of the AuNP solution from red to blackish green. Transmission electron microscopy (TEM) observations and dynamic light scattering (DLS) tests show that the AuNPs break into their smaller sizes right after addition of DA. The results confirm that the DMAP capped AuNPs are etched by the DA molecules due to the strong affinity between DA and AuNPs, thus causing a blue shift in the absorption spectrum. The concentration of DA is quantitatively monitored by using a UV-Vis spectrometer with a limit of detection (LOD) as low as 5 nM. In addition, the results also show that the methods developed appear to have no significant problems in detecting DA in the sample even with the presence of (10 mM) common interferents such as ascorbic acid (AA), homovanillic acid (HVA), catechol (CA) and glutathione (GSH). The developed AuNP etching protocol for dopamine detection provides a novel and versatile approach for rapid biosensing applications. PMID:23016153

  14. Development of an electrochemical micromachining instrument for the confined etching techniques.

    PubMed

    Zhou, Hang; Lai, Lei-Jie; Zhao, Xiang-Hui; Zhu, Li-Min

    2014-04-01

    This study proposes an electrochemical micromachining instrument for two confined etching techniques, namely, confined etchant layer technique (CELT) and electrochemical wet stamping (E-WETS). The proposed instrument consists of a granite bridge base, a Z-axis coarse/fine dual stage, and a force sensor. The Z-axis coarse/fine dual stage controls the vertical movement of the substrate with nanometer accuracy. The force sensor measures the contact force between the mold and the substrate. A contact detection method based on a digital lock-in amplifier is developed to make the mold-substrate contact within a five-nanometer range in CELT, and a force feedback controller is implemented to keep the contact force in E-WETS at a constant value with a noise of less than 0.2 mN. With the use of the confined etching techniques, a microlens array and a curvilinear ridge microstructure are successfully fabricated with high accuracy, thus demonstrating the promising performance of the proposed micromachining instrument. PMID:24784674

  15. Micro/nanofabrication of poly(L-lactic acid) using focused ion beam direct etching

    NASA Astrophysics Data System (ADS)

    Oyama, Tomoko Gowa; Hinata, Toru; Nagasawa, Naotsugu; Oshima, Akihiro; Washio, Masakazu; Tagawa, Seiichi; Taguchi, Mitsumasa

    2013-10-01

    Micro/nanofabrication of biocompatible and biodegradable poly(L-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  16. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  17. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel.

    PubMed

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-02-01

    Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  18. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  19. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    PubMed

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  20. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    PubMed Central

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A.; Divakar, Darshan Devang; Matinlinna, Jukka P.; Vallittu, Pekka K.

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  1. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  2. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin.

    PubMed

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  3. Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

    PubMed Central

    Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

    2013-01-01

    Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

  4. Development and application of the electrochemical etching technique. Annual progress report

    SciTech Connect

    Not Available

    1980-08-01

    This annual progress report documents further advances in the development and application of electrochemical etching of polycarbonate foils (ECEPF) for fast, intermediate, and thermal neutron dosimetry as well as alpha particle dosimetry. The fast (> 1.1 MeV) and thermal neutron dosimetry techniques were applied to a thorough investigation of the neutron contamination inherent in and about the primary x-ray beam of several medical therapy electron accelerators. Because of the small size of ECEPF dosimeters in comparison to other neutron meters, they have an unusually low perturbation of the radiation field under measurement. Due to this small size and the increased sensitivity of the ECEPF dosimeter over current techniques of measuring neutrons in a high photon field, the fast neutron contamination in the primary x-ray beam of all the investigated accelerators was measured with precision and found to be greater than that suggested by the other, more common, neutron dosimetry methods.

  5. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    NASA Astrophysics Data System (ADS)

    Liu, Wenyong; Sun, Linyu; Luo, Yuting; Wu, Ruomei; Jiang, Haiyun; Chen, Yi; Zeng, Guangsheng; Liu, Yuejun

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157̊. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159̊ by coating PP-g-MAH, while the CA was only 141̊ by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro-nano concave-convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro-nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  6. Color Stability of Enamel following Different Acid Etching and Color Exposure Times

    PubMed Central

    Jahanbin, Arezoo; Basafa, Mohammad; Moazzami, Mostafa; Basafa, Behnoush; Eslami, Neda

    2014-01-01

    Background and aims. The aim of this study was to evaluate the effect of different etching times on enamel color stability after immediate versus delayed exposure to colored artificial saliva (CAS). Materials and methods. Human first premolars were divided into five groups of twenty. A colorimeter was used according to the CIE system on the mid-buccal and mid-lingual surfaces to evaluate initial tooth color. Samples in group A remained unetched. In groups B to E, buccal and lingual surfaces were initially etched with phosphoric acid for 15 and 60 seconds, respectively. Then, the samples in groups A and C were immersed in colored artificial saliva (cola+saliva). In group B, the teeth were immersed in simple artificial saliva (AS). Samples in groups D and E were immersed in AS for 24 and 72 hours, respectively before being immersed in colored AS. The teeth were immersed for one month in each solution before color measurement. During the test period, the teeth were retrieved from the staining solution and stored in AS for five minutes. This was repeated 60 times. Color changes of buccal and lingual surfaces were calculated. Kruskal-Wallis and Wilcoxon tests were used for statistical analysis (α ≤0.05). Results. There were no significant differences between the groups in term of ΔE of buccal (P = 0.148) and lingual surfaces (P = 0.73). Conclusion. Extended time of etching did not result in significant enamel color change. Immediate and delayed exposure of etched enamel to staining solutions did not result in clinically detectable tooth color changes. PMID:25093048

  7. Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Bui, P. V.; Isohashi, A.; Kizaki, H.; Sano, Y.; Yamauchi, K.; Morikawa, Y.; Inagaki, K.

    2015-11-01

    Hydrofluoric acid (HF) etching of the SiC surface assisted by Pt as a catalyst is investigated using density functional theory. Etching is initiated by the dissociative adsorption of HF on step-edge Si, forming a five-fold coordinated Si moiety as a metastable state. This is followed by breaking of the Si-C back-bond by a H-transfer process. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction.

  8. Observation of thermally etched grain boundaries with the FIB/TEM technique

    SciTech Connect

    Palizdar, Y.; San Martin, D.; Ward, M.; Cochrane, R.C.; Brydson, R.; Scott, A.J.

    2013-10-15

    Thermal etching is a method which is able to reveal and characterize grain boundaries, twins or dislocation structures and determine parameters such as grain boundary energies, surface diffusivities or study phase transformations in steels, intermetallics or ceramic materials. This method relies on the preferential transfer of matter away from grain boundaries on a polished sample during heating at high temperatures in an inert/vacuum atmosphere. The evaporation/diffusion of atoms at high temperatures results in the formation of grooves at the intersections of the planes of grain/twin boundaries with the polished surface. This work describes how the combined use of Focussed Ion Beam and Transmission Electron Microscopy can be used to characterize not only the grooves and their profile with the surface, but also the grain boundary line below the groove, this method being complementary to the commonly used scanning probe techniques. - Highlights: • Thermally etched low-carbon steel samples have been characterized by FIB/TEM • Grain boundary (GB) lines below the groove have been characterized in this way • Absence of ghost traces and large θ angle suggests that GB are not stationary but mobile • Observations correlate well with previous works and Mullins' investigations [22].

  9. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    NASA Astrophysics Data System (ADS)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  10. Comparison of shear bond strength and surface structure between conventional acid etching and air-abrasion of human enamel.

    PubMed

    Olsen, M E; Bishara, S E; Damon, P; Jakobsen, J R

    1997-11-01

    Recently, air-abrasion technology has been examined for potential applications within dentistry, including the field of orthodontics. The purpose of this study was to compare the traditional acid-etch technique with an air-abrasion surface preparation technique, with two different sizes of abrading particles. The following parameters were evaluated: (a) shear bond strength, (b) bond failure location, and (c) enamel surface preparation, as viewed through a scanning electron microscope. Sixty extracted human third molars were pumiced and divided into three groups of 20. The first group was etched with a 37% phosphoric acid gel for 30 seconds, rinsed for 30 seconds, and dried for 20 seconds. The second and third groups were air-abraded with (a) a 50 microm particle and (b) a 90 microm particle of aluminum oxide, with the Micro-etcher microabrasion machine (Danville Engineering Inc.). All three groups had molar stainless steel orthodontic brackets bonded to the buccal surface of each tooth with Transbond XT bonding system (3M Unitek). A Zwick Universal Testing Machine (Calitek Corp.) was used to determine shear bond strengths. The analysis of variance was used to compare the three groups. The Adhesive Remnant Index (ARI) was used to evaluate the residual adhesive on the enamel after bracket removal. The chi square test was used to evaluate differences in the ARI scores among the groups. The significance for all tests was predetermined at p < or = 0.05. The results indicated that there was a significant difference in shear bond strength among the three groups (p = 0.0001). The Duncan Multiple Range test showed a significant decrease in shear bond strength in the air-abraded groups. The chi square test revealed significant differences among the ARI scores of the acid-etched group and the air-abraded groups (chi(2) = 0.0001), indicating no adhesive remained on the enamel surface after debonding when air-abrasion was used. In conclusion, the current findings indicate that

  11. Characterization of CdTe Growth on GaAs Using Different Etching Techniques

    NASA Astrophysics Data System (ADS)

    Bilgilisoy, E.; Özden, S.; Bakali, E.; Karakaya, M.; Selamet, Y.

    2015-09-01

    CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm-2 to 2 × 108 cm-2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm-2 to 7 × 107 cm-2 range for samples with thicknesses <2 μm.

  12. Effect of Lactic Acid Etching on Bonding Effectiveness of Orthodontic Bracket after Water Storage

    PubMed Central

    Alsulaimani, Fahad F.

    2014-01-01

    Objective. To determine the effect of lactic acid at various concentrations on the shear bond strength of orthodontic brackets bonded with the resin adhesive system before and after water storage. Materials and Methods. Hundred extracted human premolars were divided into 5 treatment groups and etched for 30 seconds with one of the following agents: lactic acid solution with (A) 10%, (B) 20%, (C) 30%, and (D) 50%; group E, 37% phosphoric acid (control). Metal brackets were bonded using a Transbond XT. Bonding effectiveness was assessed by shear bond strength after 24 hours and 6 months of water storage at 37°C. The data were analyzed with 2-way analysis of variance and Tukey's Honestly Significant Difference (HSD) test (α = .001). Results. Lactic acid concentration and water storage resulted in significant differences for brackets bond strength (P < .001). 20% lactic acid had significantly higher mean bond strength values (SD) for all conditions: 24 hours [12.2 (.7) MPa] and 6 months [10.1 (.6) MPa] of water storage. 37% phosphoric acid had intermediate bond strength values for all conditions: 24 hours [8.2 (.6) MPa] and 6 months [6.2 (.6) MPa] of water storage. Also, there were differences in bond strength between storage time, with a reduction in values from 24 hours and 6 months for all experimental groups (P < .001). Conclusion. Lactic acid could be used in place of phosphoric acid as an enamel etchant for bonding of orthodontic brackets. PMID:25006465

  13. Low loss silicon waveguides and grating couplers fabricated using anisotropic wet etching technique

    NASA Astrophysics Data System (ADS)

    Debnath, Kapil; Arimoto, Hideo; Husain, Muhammad; Prasmusinto, Alyssa; Al-Attili, Abdelrahman; Petra, Rafidah; Chong, Harold; Reed, Graham; Saito, Shinichi

    2016-02-01

    We report low-loss silicon waveguides and efficient grating coupler to couple light into them. By using anisotropic wet etching technique, we reduced the side wall roughness down to 1.2nm. The waveguides were patterned along the [112] direction on a [110] SOI substrate. The waveguide boundaries are decided by the [111] planes which are normal to the [110] surface. Fabricated waveguides show minimum propagation loss of 0.85 dB/cm for TE polarization and 1.08dB/cm for TM polarization. The fabricated grating couplers show coupling efficiency of -4.16dB at 1570nm with 3dB bandwidth of 46nm.

  14. Comparative Study of the Effect of Acid Etching on Enamel Surface Roughness between Pumiced and Non-pumiced Teeth

    PubMed Central

    Abreu, Lucas Guimarães; Paiva, Saul Martins; Pretti, Henrique; Lages, Elizabeth Maria Bastos; Júnior, João Batista Novães; Ferreira, Ricardo Alberto Neto

    2015-01-01

    Background: The objective was to perform a comparative analysis of the effect of acid etching on enamel roughness between pumiced and non-pumiced teeth. Materials and Methods: The sample was composed of 32 dental surfaces divided into two groups: Group 1-16 surfaces having received pumice prophylaxis; and Group 2-16 surfaces not having received pumice prophylaxis. The teeth were kept in saline until the first record of surface roughness prior to etching. For each surface, a roughness graph was obtained through trials using a surface roughness tester. This procedure was repeated two more times at different locations for a total of three readings which, later, were converted in a mean value. The teeth were then acid etched with a 37% phosphoric acid for 60 s, rinsed with water, air dried, and tested with the roughness tester again using the same protocol described for baseline. The Quantikov image analysis program was used to measure the length of the graphs. The average value of the lengths was recorded for each surface before and after etching. The increase in roughness caused by acid etching was calculated and compared between groups. Results: The mean increase in roughness caused by the etching was 301 µm (11.37%) in Group 1 and 214 µm (8.33%) in Group 2. No statistically significant difference was found between samples with and without pumice prophylaxis (P = 0.283). Conclusion: The present study showed that the effect of acid etching on enamel roughness was not significantly affected by prior pumice prophylaxis. PMID:26435607

  15. Reliability evaluation of alumina-blasted/acid-etched versus laser-sintered dental implants.

    PubMed

    Almeida, Erika O; Júnior, Amilcar C Freitas; Bonfante, Estevam A; Silva, Nelson R F A; Coelho, Paulo G

    2013-05-01

    Step-stress accelerated life testing (SSALT) and fractographic analysis were performed to evaluate the reliability and failure modes of dental implant fabricated by machining (surface treated with alumina blasting/acid etching) or laser sintering for anterior single-unit replacements. Forty-two dental implants (3.75 × 10 mm) were divided in two groups (n=21 each): laser sintered (LS) and alumina blasting/acid etching (AB/AE). The abutments were screwed to the implants and standardized maxillary central incisor metallic crowns were cemented and subjected to SSALT in water. Use-level probability Weibull curves and reliability for a mission of 50,000 cycles at 200 N were calculated. Polarized light and scanning electron microscopes were used for failure analyses. The Beta (β) value derived from use-level probability Weibull calculation of 1.48 for group AB/AE indicated that damage accumulation likely was an accelerating factor, whereas the β of 0.78 for group LS indicated that load alone likely dictated the failure mechanism for this group, and that fatigue damage did not appear to accumulate. The reliability was not significantly different (p>0.9) between AB/AE (61 %) and LS (62 %). Fracture of the abutment and fixation screw was the chief failure mode. No implant fractures were observed. No differences in reliability and fracture mode were observed between LS and AB/AE implants used for anterior single-unit crowns. PMID:22843309

  16. In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

    NASA Astrophysics Data System (ADS)

    Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

    2010-02-01

    Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

  17. Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

    PubMed

    Ahmad, Muthanna; Grime, Geoffrey W

    2013-04-01

    Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS. PMID:23388452

  18. Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique

    NASA Astrophysics Data System (ADS)

    Choi, H. W.; Jeon, C. W.; Dawson, M. D.

    2004-08-01

    A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.

  19. Electrical properties of Hg1-xCdxTe by different etching techniques

    NASA Astrophysics Data System (ADS)

    Chen, X. T.; Qiao, H.; Liu, X. Y.; Yang, K. J.

    2015-11-01

    Effects on the electrical properties of HgCdTe photoconductive devices etched by inductively coupled plasma (ICP) based on CH4-Ar mixture, ion beam milling (IBM) and bromine-hydrogen bromide solution (Br2/HBr) have been investigated. Magnetic-field-dependent Hall measurement and optoelectronic performance measurement at liquid nitrogen temperature were performed. Mobility spectrum analysis (MSA) and multicarrier fitting (MCF) were applied to evaluate the carrier characteristics. Sample etched by ICP indicated a higher mobility and the carrier scattering mechanism was dominated by polar optical phonon (POP) which could lead to superior detector performance accordingly. Meanwhile, sample etched by IBM was found to have large amount of electron concentration and sample etched by Br2/HBr showed a very low mobility. The dominant mechanism of Br2/HBr etched sample was ionized impurity scattering for the carriers which meant inferior resultant detector performance.

  20. Acid Etching and Surface Coating of Glass-Fiber Posts: Bond Strength and Interface Analysis.

    PubMed

    Cecchin, Doglas; Farina, Ana Paula; Vitti, Rafael Pino; Moraes, Rafael Ratto; Bacchi, Ataís; Spazzin, Aloísio Oro

    2016-01-01

    The aim of this study was to evaluate the bond strength of a composite resin to glass-fiber post (GFP) treated or not with phosphoric acid, silane coupling agent, and unfilled resin. GFPs were etched or not with 37% phosphoric acid and different surface coating applied: silane coupling agent, unfilled resin, or both. Composite resin blocks were built around a 4-mm height on the GFP. Unfilled resin (20 s) and composite resin (40 s) were light activated by a light-emitting diode unit. The specimens were stored in distilled water at 37 °C for 24 h. Microtensile bond test was performed using a mechanical testing machine until failure (n=10). The data were analyzed using two-way ANOVA followed by Student-Newman-Keuls' test (p<0.05). Failure modes were classified as adhesive, mixed, or cohesive failures. Additional specimens (n=3) were made to analyze the bonded interfaces by scanning electron microscopy. The statistical analysis showed the factor 'surface coating' was significant (p<0.05), whereas the factor 'HP etching' (p=0.131) and interaction between the factors (p=0.171) were not significant. The highest bond strength was found for the silane and unfilled resin group (p<0.05). A predominance of adhesive and cohesive failures was found. Differences regarding the homogeneity and thickness of the unfilled resin layer formed by different GFP surface treatments were observed. The application of silane and unfilled resin can improve the bond strength between GFP and resin composite. PMID:27058389

  1. Effect of adhesive hydrophilicity and curing-time on the permeability of resins bonded to water vs. ethanol-saturated acid-etched dentin

    PubMed Central

    Cadenaro, Milena; Breschi, Lorenzo; Rueggeberg, Frederick A.; Agee, Kelli; Di Lenarda, Roberto; Carrilho, Marcela; Tay, Franklin R.; Pashley, David H.

    2009-01-01

    Objective This study examined the ability of five comonomer blends (R1-R5) of methacrylate-based experimental dental adhesives solvated with 10 mass% ethanol, at reducing the permeability of acid-etched dentin. The resins were light-cured for 20, 40 or 60 s. The acid-etched dentin was saturated with water or 100% ethanol. Method Human unerupted third molars were converted into crown segments by removing the occlusal enamel and roots. The resulting crown segments were attached to plastic plates connected to a fluid-filled system for quantifying fluid flow across smear layer-covered dentin, acid-etched dentin and resin-bonded dentin. The degree of conversion of the resins was measured using Fourier transform infrared spectroscopy. Result Application of the most hydrophobic comonomer blend (R1) to water-saturated dentin produced the smallest reductions in dentin permeability (31.9, 44.1 and 61.1% after light-curing for 20, 40 or 60 s respectively). Application of the same blend to ethanol-saturated dentin reduced permeability of 74.1, 78.4 and 81.2%, respectively (p<0.05). Although more hydrophilic resins produced larger reductions in permeability, the same trend of significantly greater reductions in ethanol-saturated dentin over that of water-saturated dentin remained. This result can be explained by the higher solubility of resins in ethanol vs. water. Significance The largest reductions in permeability produced by resins were equivalent but not superior, to those produced by smear layers. Resin sealing of dentin remains a technique-sensitive step in bonding etch-and-rinse adhesives to dentin. PMID:18571228

  2. Comparative Evaluation of Tensile – Bond Strength of An Orthodontic Adhesive with and without Fluoride Application, After Acid Etching -An Invitro Study

    PubMed Central

    Yugandhar, G; Ramana, I Venkata; Srinivas, K; Yadav, S. Sarjeev Singh

    2015-01-01

    Background Fixed appliances hinder the effective control of plaque accumulation and white spot lesions may develop under the ill fitting bands or adjacent to the stainless steel brackets during orthodontic treatment particularly the etching process. Aims and Objectives Comparative study of tensile bond strength of an orthodontic adhesive with and without fluoride application after acid etching to know the effect of fluoride on bond strength. Materials and Methods This study is carried out on 90 non carious human premolar teeth, and divided in 6 groups with each group of 15 specimens. In those Groups I and IV were control group acid etch treatment, Group II and V is 1.23% APF gel (acid etch plus APF gel treatment,) and group III and VI is 8% SnF2 (acid etch plus SnF2 treatment). Samples of Group I, II and III bond strength were tested after 24 h and groups IV, V and VI after one month on microtechtensometer machine. The scanning electron microscope (SEM) investigation was carried out for the 2 specimens for the control group after acid etch and 4 specimens after acid etch with fluoride application for fluoride groups. Results Control and SnF2 treated groups was found to be nearly similar to the control group whereas APF treated group showed less focal holes than the other 2 groups. Conclusion Fluoride application after acid etching without having an adverse effect on bond strength but we can prevent the white spot lesions and caries. PMID:26023648

  3. Adhesion of 10-MDP containing resin cements to dentin with and without the etch-and-rinse technique

    PubMed Central

    Sen, Deniz; Tuncelli, Betul; Özcan, Mutlu

    2013-01-01

    PURPOSE This study evaluated the adhesion of 10-MDP containing self-etch and self-adhesive resin cements to dentin with and without the use of etch-and-rinse technique. MATERIALS AND METHODS Human third molars (N=180) were randomly divided into 6 groups (n=30 per group). Conventional (Panavia F2.0, Kuraray-PAN) and self-adhesive resin cements (Clearfil SA, Kuraray-CSA) were bonded to dentin surfaces either after application of 3-step etch-and-rinse (35% H3PO4 + ED Primer) or two-step self-etch adhesive resin (Clearfil SE Bond). Specimens were subjected to shear bond strength test using the universal testing machine (0.5 mm/min). The failure types were analyzed using a stereomicroscope and quality of hybrid layer was observed under a scanning electron microscope. The data (MPa) were analyzed using two-way ANOVA and Tukey's tests (α=.05). RESULTS Overall, PAN adhesive cement showed significantly higher mean bond strength (12.5 ± 2.3 - 14.1 ± 2.4 MPa) than CSA cement (9.3 ± 1.4 - 13.9 ± 1.9 MPa) (P<.001). Adhesive failures were more frequent in CSA cement groups when used in conjunction with two-step self-adhesive (68%) or no adhesive at all (66%). Hybrid layer quality was inferior in CSA compared to PAN cement in all conditions. CONCLUSION In clinical situations where bonding to dentin substrate is crucial, both conventional and self-adhesive resin cements based on 10-MDP can benefit from etch-and-rinse technique to achieve better quality of adhesion in the early clinical period. PMID:24049562

  4. Effects of heat treating silane and different etching techniques on glass fiber post push-out bond strength.

    PubMed

    Samimi, P; Mortazavi, V; Salamat, F

    2014-01-01

    The aims of this study were to compare two pretreatment methods of a fiber post and to evaluate the effect of heat treatment to applied silane on the push-out bond strength for different levels of root. In this in vitro study, 40 glass fiber posts were divided into five groups (n=8) according to the kind of surface treatment applied. They were then inserted into extracted and endodontically treated human canines using a self-etch resin cement (Panavia F2.0, Kuraray, Japan). Group HF+S = hydrofluoric acid (HF) etching and silane (S) application; group HF+S+WP = HF etching and heat-treated silane application and warmed posts (WP); group H2O2+S = hydrogen peroxide etching and silane application; group H2O2+S+WP = hydrogen peroxide and heat-treated-silane application and warmed post; and group C, the control group, received no pretreatment. After completion of thermal cycling (1000 cycles, 5-55°C), all specimens were cut horizontally to obtain three sections. Each section was subjected to a push-out test, and the test results were analyzed using two-way analysis of variance, post-hoc Tukey honestly significant difference test, and a paired sample t-test (α=0.05). It was found that bond strength was not statistically influenced by the kind of etching material used (p=0.224), but was significantly affected by heat treatment of applied silane (p<0.001). The interaction between these two factors was not statistically significant (p=0.142). Group HF+S+WP showed the highest bond strength (12.56±1.73 MPa) (p<0.05). Scanning electron microscopy revealed the effect of the different treatments on the surface characteristics of posts. In the four pretreated groups, the bond strength decreased significantly from the coronal to the apical root canal sections (p≤0.05). The results of this study show that the use of heat-treated silane significantly enhances the push-out bond strength of the fiber posts to root. HF acid etching with heat-treated silane application led to the

  5. Fourier transform infrared photoacoustic spectroscopy study of physicochemical interaction between human dentin and etch-&-rinse adhesives in a simulated moist bond technique

    NASA Astrophysics Data System (ADS)

    Ubaldini, Adriana L. M.; Baesso, Mauro L.; Sehn, Elizandra; Sato, Francielle; Benetti, Ana R.; Pascotto, Renata C.

    2012-06-01

    The purpose of this study was to provide the physicochemical interactions at the interfaces between two commercial etch-&-rinse adhesives and human dentin in a simulated moist bond technique. Six dentin specimens were divided into two groups (n=3) according to the use of two different adhesive systems: (a) 2-hydroxyethylmethacrylate (HEMA) and 4-methacryloxyethyl trimellitate anhydrate (4-META), and (b) HEMA. The Fourier transform infrared photoacoustic spectroscopy was performed before and after dentin treatment with 37% phosphoric acid, with adhesive systems and also for the adhesive systems alone. Acid-conditioning resulted in a decalcification pattern. Adhesive treated spectra subtraction suggested the occurrence of chemical bonding to dentin expressed through modifications of the OH stretching peak (3340 cm-1) and symmetric CH stretching (2900 cm-1) for both adhesives spectra; a decrease of orthophosphate absorption band (1040 to 970 cm-1) for adhesive A and a better resolved complex band formation (1270 to 970 cm-1) for adhesive B were observed. These results suggested the occurrence of chemical bonding between sound human dentin and etch-&-rinse adhesives through a clinical typical condition.

  6. Effect of the application time of phosphoric acid and self-etch adhesive systems to sclerotic dentin

    PubMed Central

    MENA-SERRANO, Alexandra Patricia; GARCIA, Eugenio Jose; PEREZ, Miguel Muñoz; MARTINS, Gislaine Cristine; GRANDE, Rosa Helena Miranda; LOGUERCIO, Alessandro Dourado; REIS, Alessandra

    2013-01-01

    Objectives: To evaluate the effect of application time on the resin-dentin bond strength (µTBS) and etching pattern of adhesive systems applied on sclerotic dentine. Material and Methods: A total of forty-two bovine incisors had their roots removed. The 1-step self-etch GO (SDI), the 2-step self-etch Adper SE Bond (3MESPE) and the 35% phosphoric acid (3MESPE) from the 2-step etch-and-rinse Adper Single Bond 2 (3MESPE) were applied on the bovine incisal surfaces according to the manufacturer's instructions or duplicating the recommended conditioning time. After adhesive application, thirty teeth were restored with composite resin, stored for 24 h in distilled water at 37º C, and sectioned into resin-dentin bonded sticks (0.8 mm2) and tested according to the µTBS at 0.5 mm/min. The etching pattern of the remaining twelve teeth (n=4 for each material) was examined under scanning electron microscopy. Each tooth was divided into a buccal-to-lingual direction into three thirds, and each third randomly assigned to the groups: control (no treatment), according to the manufacturers' instructions and duplicating the recommended application time. The µTBS and the relative percentage of the tubule area opening were evaluated by two-way repeated measures ANOVA and Tukey's tests (α=0.05). Results: The duplication of the conditioning time favored only the GO adhesive (p<0.05). Both application methods significantly increased the tubule area opening (p<0.05) compared to the controls. Conclusions: The efficacy of duplicating the conditioning time was only effective for the 1-step self-etch adhesive system tested. PMID:23739856

  7. Instrumentation With Ultrasonic Scalers Facilitates Cleaning of the Sandblasted and Acid-Etched Titanium Implants.

    PubMed

    Park, Jun-Beom; Lee, Sung-Hoon; Kim, NamRyang; Park, Seojin; Jin, Seong-Ho; Choi, Bong-Kyu; Kim, Kack-Kyun; Ko, Youngkyung

    2015-08-01

    Mechanical instrumentation is widely used to debride dental implants, but this may alter the surface properties of titanium, which in turn may influence bacterial adhesion and make it more difficult to remove the biofilm. This in vitro study was performed (1) to assess the amount of biofilm formation on a sand-blasted and acid-etched titanium fixture treated with ultrasonic scalers with metal, plastic, and carbon tips and (2) to evaluate how this treatment of titanium surfaces affects implant cleaning by brushing with dentifrice. The titanium fixtures were treated with various ultrasonic scaler tips, and surface roughness parameters were measured by confocal microscopy. Biofilm was formed on the treated fixtures by using pooled saliva from 10 subjects, and the quantity of the adherent bacteria was compared with crystal violet assay. The fixture surfaces with biofilm were brushed for total of 30 seconds with a toothbrush with dentifrice. The bacteria remaining on the brushed fixture surfaces were quantified by scanning electron microscopy. Surface changes were evident, and the changes of the surfaces were more discernible when metal tips were used. A statistically significant decrease in roughness value (arithmetic mean height of the surface) was seen in the 2 metal-tip groups and the single plastic-tip group. After brushing with dentifrice, the treated surfaces in all the treatment groups showed significantly fewer bacteria compared with the untreated surfaces in the control group, and the parts of the surfaces left untreated in the test groups. Within the limits of this study, treatment of titanium fixture surfaces with ultrasonic metal, plastic, or carbon tips significantly enhanced the bacterial removal efficacy of brushing. Thorough instrumentation that smooths the whole exposed surface may facilitate maintenance of the implants. PMID:24552131

  8. An in vitro study to compare the effect of two etching techniques on the tensile bond strength of resin cement bonded to base metal alloy and enamel.

    PubMed

    Sudheer, Arunachalam; Shetty, Gautam

    2013-12-01

    Resin-bonded retainers are being preferred for anterior restorations. To increase the retentive strength of the metal fixed to the tooth, the retainer surface has to be etched. Different etching techniques are described in the literature with different researchers expressing the superiority of one technique over the other. This study was conducted to compare electro chemical and chemical etching techniques and the mode of bond failure. Twenty human maxillary premolars with the crown portion separated from root were embedded in resin block such that mesial or distal portion of it was exposed on the top of the block. 4 × 5 mm area was marked on the tooth, and wax pattern was prepared to cover the exact area, with the opposite end having a hook like structure which was later attached to universal testing machine. Wiron99 Ni-Cr alloy was used for casting. Once the casting and etching procedures were finished, wax patterns were invested, casted and half the samples were etched chemically using Aqua-regia and the other half samples were etched electrochemically. The castings were cleaned and cemented to tooth structure using Rely-X ARC (3 M ESPE, USA) resin cement. Specimens were fixed to universal testing machine and de-bonded. The load required to de-bond and mode of de-bonding was noted. Results were subjected to five different statistical tests, each test specific to the variable being tested. The mean failure load was calculated as 5.95 kg for electrochemically etched samples and that of chemically etched samples was calculated as 11.15 kg. The standard deviation of the force required to debond the specimens (Kgf) was calculated and found to be 0.65 for electrochemically etched samples and 1.11 for chemically etched samples. The following conclusions have been drawn from the study. 1. Chemical etching of the samples created better retentive surfaces than electrochemical etching. 2. The results of mode of de-bonding show that in case of chemical etching

  9. Effects of aluminum microstructure on electromigration using a new reactive ion etching and scanning electron microscopy technique

    NASA Astrophysics Data System (ADS)

    Wu, Ken; Baerg, William; Jupiter, Peter

    1991-03-01

    The effects of microstructure on the electromigration of aluminum-1% silicon and titanium/aluminum-silicon films were studied using a new reactive ion etching/scanning electron microscopy technique. We found that the number of intersecting Al grain boundaries, called ``triple points,'' in the metal line plays an important role in determining the median-time-to-fail (MTTF) of the electromigration distribution. Our data shows that the electromigration MTTF increases by 6× or 8× when the number of triple points decreases by 3× or 5× on Al-Si or Ti/Al-Si metallization, respectively.

  10. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    SciTech Connect

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa; Hinata, Toru; Washio, Masakazu; Oshima, Akihiro; Tagawa, Seiichi

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  11. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    PubMed

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s. PMID:27315775

  12. Plasma etching and ashing: a technique for demonstrating internal structures of helminths using scanning electron microscopy.

    PubMed

    Veltkamp, C J; Chubb, J C

    2006-03-01

    Plasma etching and ashing for demonstrating the three-dimensional ultrastructure of the internal organs of helminths is described. Adult worms of the cestode Caryophyllaeides fennica were dehydrated through an ethanol series, critical point dried (Polaron E3000) and sputter coated with 60% gold-palladium (Polaron E5100) and glued to a standard scanning electron microscope (SEM) stub positioned as required for ashing. After initial SEM viewing of worm surfaces for orientation, stubs were placed individually in the reactor chamber of a PT7150 plasma etching and ashing machine. Worms were exposed to a radio frequency (RF) potential in a low pressure (0.2 mbar) oxygen atmosphere at room temperature. The oxidation process was controlled by varying the times of exposure to the RF potential between 2 to 30 min, depending on the depth of surface tissue to be removed to expose target organs or tissues. After each exposure the oxidized layer was blown from the surface with compressed air, the specimen sputter-coated, and viewed by SEM. The procedure was repeated as necessary, to progressively expose successive layers. Fine details of organs, cells within, and cell contents were revealed. Ashing has the advantage of providing three dimensional images of the arrangement of organs that are impossible to visualize by any other procedure, for example facilitating testes counts in cestodes. Both freshly-fixed and long-term stored helminths can be ashed. Ashing times to obtain the desired results were determined by trial so that some duplicate material was needed. PMID:16469178

  13. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    PubMed

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P < 0.05); no difference was observed between the composites (P > 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength. PMID:22414522

  14. Oxide etch dusty plasma studies in the GEC reference cell using dynamic laser light scattering techniques

    SciTech Connect

    Anderson, H.M.; Radovanov, S.

    1995-12-31

    Particulate generation has been studied during reactive on etching (RIE) of oxide wafers in CF{sub 4}/CHF{sub 3} plasmas using the GEC Reference Cell. Under certain discharge process conditions, copious amounts of submicron particles form due to plasma interaction with the oxide substrate. Particles were observed in situ by laser light scattering (LLS) and dynamic laser light scattering (DLSS). DLLS can be used to determine information about particle size, motion, and growth dynamics. DLSS measurements show process-induced dust particles confined in an electrostatic trap exhibit low-frequency oscillatory motion consistent with charge density wave (CDW) motion. These results are also consistent with the plasma dust particles forming a strongly coupled Coulomb liquid phase.

  15. Polysilicon planarization and plug recess etching in a decoupled plasma source chamber using two endpoint techniques

    NASA Astrophysics Data System (ADS)

    Kaplita, George A.; Schmitz, Stefan; Ranade, Rajiv; Mathad, Gangadhara S.

    1999-09-01

    The planarization and recessing of polysilicon to form a plug are processes of increasing importance in silicon IC fabrication. While this technology has been developed and applied to DRAM technology using Trench Storage Capacitors, the need for such processes in other IC applications (i.e. polysilicon studs) has increased. Both planarization and recess processes usually have stringent requirements on etch rate, recess uniformity, and selectivity to underlying films. Additionally, both processes generally must be isotropic, yet must not expand any seams that might be present in the polysilicon fill. These processes should also be insensitive to changes in exposed silicon area (pattern factor) on the wafer. A SF6 plasma process in a polysilicon DPS (Decoupled Plasma Source) reactor has demonstrated the capability of achieving the above process requirements for both planarization and recess etch. The SF6 process in the decoupled plasma source reactor exhibited less sensitivity to pattern factor than in other types of reactors. Control of these planarization and recess processes requires two endpoint systems to work sequentially in the same recipe: one for monitoring the endpoint when blanket polysilicon (100% Si loading) is being planarized and one for monitoring the recess depth while the plug is being recessed (less than 10% Si loading). The planarization process employs an optical emission endpoint system (OES). An interferometric endpoint system (IEP), capable of monitoring lateral interference, is used for determining the recess depth. The ability of using either or both systems is required to make these plug processes manufacturable. Measuring the recess depth resulting from the recess process can be difficult, costly and time- consuming. An Atomic Force Microscope (AFM) can greatly alleviate these problems and can serve as a critical tool in the development of recess processes.

  16. Investigations on the SR method growth, etching, birefringence, laser damage threshold and dielectric characterization of sodium acid phthalate single crystals

    NASA Astrophysics Data System (ADS)

    Senthil, A.; Ramasamy, P.; Verma, Sunil

    2011-03-01

    Optically good quality semi-organic single crystal of sodium acid phthalate (NaAP) was successfully grown by Sankaranarayanan-Ramasamy (SR) method. Transparent, colourless <0 0 1> oriented unidirectional bulk single crystals of diameters 10 and 20 mm and length maximum up to 75 mm were grown by the SR method. The grown crystals were subjected to various characterization studies such as etching, birefringence, laser damage threshold, UV-vis spectrum and dielectric measurement. The value of birefringence and quality were ascertained by birefringence studies.

  17. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    NASA Astrophysics Data System (ADS)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  18. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    PubMed

    Monje, Alberto; González-García, Raúl; Fernández-Calderón, María Coronada; Hierro-Oliva, Margarita; González-Martín, María Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 × 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ≥×500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to ×2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined. PMID:25642739

  19. Etching fission tracks in zircons

    USGS Publications Warehouse

    Naeser, C.W.

    1969-01-01

    A new technique has been developed whereby fission tracks can be etched in zircon with a solution of sodium hydroxide at 220??C. Etching time varied between 15 minutes and 5 hours. Colored zircon required less etching time than the colorless varieties.

  20. Multiple-mask chemical etching

    NASA Technical Reports Server (NTRS)

    Cannon, D. L.

    1969-01-01

    Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

  1. Etching of enamel for direct bonding with a thulium fiber laser

    NASA Astrophysics Data System (ADS)

    Kabaş Sarp, Ayşe S.; Gülsoy, Murat

    2011-03-01

    Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

  2. Mesoporous Iron Oxide Nanoparticles Prepared by Polyacrylic Acid Etching and Their Application in Gene Delivery to Mesenchymal Stem Cells

    PubMed Central

    CAO, BINRUI; QIU, PENGHE; MAO, CHUANBIN

    2013-01-01

    Novel monodisperse mesoporous iron oxide nanoparticles (m-IONPs) were synthesized by a postsynthesis etching approach and characterized by electron microscopy. In this approach, solid iron oxide nanoparticles (s-IONPs) were first prepared following a solvothermal method, and then etched anisotropically by polyacrylic acid to form the mesoporous nanostructures. MTT cytotoxicity assay demonstrated that the m-IONPs have good biocompatibility with mesenchymal stem cells (MSCs). Owing to their mesoporous structure and good biocompatibility, these monodisperse m-IONPs were used as a nonviral vector for the delivery of a gene of vascular endothelial growth factor (VEGF) tagged with a green fluorescence protein (GFP) into the hard-to-transfect stem cells. Successful gene delivery and transfection were verified by detecting the GFP fluorescence from MSCs using fluorescence microscopy. Our results illustrated that the m-IONPs synthesized in this work can serve as a potential nonviral carrier in gene therapy where stem cells should be first transfected and then implanted into disease sites for disease treatment. PMID:23913581

  3. Unintentional F doping of SrTiO3(001) etched in HF acid-structure and electronic properties

    SciTech Connect

    Chambers, Scott A.; Droubay, Timothy C.; Capan, Cigdem; Sun, Guangyuan

    2012-02-01

    We show that the HF acid etch commonly used to prepare SrTiO3(001) for heteroepitaxial growth of complex oxides results in a non-negligible level of F doping within the terminal surface layer of TiO2. Using a combination of x-ray photoelectron spectroscopy and scanned angle x-ray photoelectron diffraction, we determine that on average ~ 13% of the O anions in the surface layer are replaced by F, but that F does not occupy O sites in deeper layers. Despite this perturbation to the surface, the Fermi level remains unpinned, and the surface-state density, which determines the amount of band bending, is driven by factors other than F doping. The presence of F at the STO surface is expected to result in lower electron mobilities at complex oxide heterojunctions involving STO substrates because of impurity scattering. Unintentional F doping can be substantially reduced by replacing the HF-etch step with a boil in deionized water, which in conjunction with an oxygen tube furnace anneal, leaves the surface flat and TiO2 terminated.

  4. Enzyme-etching technique to fabricate micropatterns of aligned collagen fibrils

    PubMed Central

    Liu, Honghai; Chen, Ruikai; Yang, Huaxiao; Qin, Wan; Borg, Thomas K.; Dean, Delphine; Xu, Meifeng; Gao, Bruce Z.

    2014-01-01

    A technique to tailor-make pre-coated, pre-aligned bovine collagen fibrils, derived from neonatal cardiomyocytes, on the surface of a glass slide into a designated pattern is reported. The unwanted collagen-coated area was erased by a collagenase solution and the tailored area was retained by attaching a microfabricated polydimethylsiloxane stamp directly to the collagen-coated surface. Using this technique, collagen patterns with designated orientations and with clear pattern boundaries and defined shapes were fabricated. PMID:24562408

  5. Microtensile bond strength of a resin-based fissure sealant to Er,Cr:YSGG laser-etched primary enamel.

    PubMed

    Sungurtekin-Ekci, Elif; Oztas, Nurhan

    2016-05-01

    The aim of this study was to evaluate the effect of Er,Cr:YSGG laser pre-treatment alone, or associated with acid-etching, on the microtensile bond strength of a resin-based fissure sealant to primary enamel. Twenty-five human primary molars were randomly divided into five groups including (1) 35 % acid etching, (2) 2.5-W laser etching, (3) 3.5-W laser etching, (4) 2.5-W laser etching + acid etching, and (5) 3.5-W laser etching + acid etching. Er,Cr:YSGG laser was used at a wavelength of 2.780 nm and pulse duration of 140-200 μs with a repetition rate of 20 Hz. Following surface pre-treatment, the fissure sealant (ClinPro™, 3M Dental Products) was applied. Each tooth was sectioned and subjected to microtensile testing. Kruskal-Wallis test was used for statistical analysis. The level of significance was set at p < 0.05. The microtensile bond strength values of group 1 were significantly higher than those of group 2, while no statistically significant difference was detected between groups 1, 3, 4, and 5. It was concluded that 3.5-W laser etching produced results comparable to conventional acid etching technique, whereas 2.5-W laser etching was not able to yield adequate bonding performance. PMID:25847685

  6. Evaluation of Bone Healing on Sandblasted and Acid Etched Implants Coated with Nanocrystalline Hydroxyapatite: An In Vivo Study in Rabbit Femur

    PubMed Central

    Melin Svanborg, Lory; Meirelles, Luiz; Franke Stenport, Victoria; Currie, Fredrik; Andersson, Martin

    2014-01-01

    This study aimed at investigating if a coating of hydroxyapatite nanocrystals would enhance bone healing over time in trabecular bone. Sandblasted and acid etched titanium implants with and without a submicron thick coat of hydroxyapatite nanocrystals (nano-HA) were implanted in rabbit femur with healing times of 2, 4, and 9 weeks. Removal torque analyses and histological evaluations were performed. The torque analysis did not show any significant differences between the implants at any healing time. The control implant showed a tendency of more newly formed bone after 4 weeks of healing and significantly higher bone area values after 9 weeks of healing. According to the results from this present study, both control and nano-HA surfaces were biocompatible and osteoconductive. A submicron thick coating of hydroxyapatite nanocrystals deposited onto blasted and acid etched screw shaped titanium implants did not enhance bone healing, as compared to blasted and etched control implants when placed in trabecular bone. PMID:24723952

  7. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    PubMed Central

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  8. Influence of acid-etched splinting methods on discoloration of dental enamel in four media: an in vitro study.

    PubMed

    Oikarinen, K S; Nieminen, T M

    1994-12-01

    The aim of this in vitro study was to assess the staining of enamel in relation to fixation of luxated teeth. Color changes induced by chlorhexidine, red wine, tea, and coffee were detected with a Minolta Chroma Meter (CR-121) after extracted teeth were treated to simulate construction of dental splinting. L*a*b* color readings were made before and after 7 days of incubation in the above-mentioned media in teeth treated 1) by acid-etching, 2) by acid-etching followed by resin, 3) by resin and composite, 4) by Triad Gel, and 5) by Protemp. L* is an indicator of black (0) and white (100). The a* values relate to the red (+100)-green (-100) color axes, and the b* values to the yellow (+100) and blue (-100) axes. Untreated teeth served as controls. One-way analysis of variance of mean L* values revealed no statistically significant differences in treatment. Discoloration was observed in all teeth, including the control ones. However, Protemp yielded the largest changes in mean L* values. Analysis of variance of mean L* values revealed statistically significant differences between incubation liquids because no increase in staining of enamel was noted after 7 days' incubation in chlorhexidine. Red wine increased the mean L* values more than coffee or tea. Changes in a*b* readings were toward red (+a*) after incubation in red wine, except in the case of teeth treated with resin. The color of all such teeth changed more toward yellow (+b*), because the resin used was yellow.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:7871352

  9. Controlled in situ etch-back

    NASA Technical Reports Server (NTRS)

    Mattauch, R. J.; Seabaugh, A. C. (Inventor)

    1981-01-01

    A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

  10. Effects of solvent volatilization time on the bond strength of etch-and-rinse adhesive to dentin using conventional or deproteinization bonding techniques

    PubMed Central

    de Sousa Júnior, José Aginaldo; Carregosa Santana, Márcia Luciana; de Figueiredo, Fabricio Eneas Diniz

    2015-01-01

    Objectives This study determined the effect of the air-stream application time and the bonding technique on the dentin bond strength of adhesives with different solvents. Furthermore, the content and volatilization rate of the solvents contained in the adhesives were also evaluated. Materials and Methods Three adhesive systems with different solvents (Stae, SDI, acetone; XP Bond, Dentsply De Trey, butanol; Ambar, FGM, ethanol) were evaluated. The concentrations and evaporation rates of each adhesive were measured using an analytical balance. After acid-etching and rinsing, medium occlusal dentin surfaces of human molars were kept moist (conventional) or were treated with 10% sodium hypochlorite for deproteinization. After applying adhesives over the dentin, slight air-stream was applied for 10, 30 or 60 sec. Composite cylinders were built up and submitted to shear testing. The data were submitted to ANOVA and Tukey's test (α = 0.05). Results Stae showed the highest solvent content and Ambar the lowest. Acetone presented the highest evaporation rate, followed by butanol. Shear bond strengths were significantly affected only by the factors of 'adhesive' and 'bonding technique' (p < 0.05), while the factor 'duration of air-stream' was not significant. Deproteinization of dentin increased the bond strength (p < 0.05). Stae showed the lowest bond strength values (p < 0.05), while no significant difference was observed between XP Bond and Ambar. Conclusions Despite the differences in content and evaporation rate of the solvents, the duration of air-stream application did not affect the bond strength to dentin irrespective of the bonding technique. PMID:26295023

  11. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOEpatents

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  12. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique

    PubMed Central

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C.-N.

    2013-01-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120–130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6–10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  13. Effect of bulk microstructure of commercially pure titanium on surface characteristics and fatigue properties after surface modification by sand blasting and acid-etching.

    PubMed

    Medvedev, A E; Ng, H P; Lapovok, R; Estrin, Y; Lowe, T C; Anumalasetty, V N

    2016-04-01

    Surface modification techniques are widely used to enhance the biological response to the implant materials. These techniques generally create a roughened surface, effectively increasing the surface area thus promoting cell adhesion. However, a negative side effect is a higher susceptibility of a roughened surface to failure due to the presence of multiple stress concentrators. The purpose of the study reported here was to examine the effects of surface modification by sand blasting and acid-etching (SLA) on the microstructure and fatigue performance of coarse-grained and ultrafine-grained (UFG) commercially pure titanium. Finer grain sizes, produced by equal channel angular pressing, resulted in lower values of surface roughness in SLA-processed material. This effect was associated with greater resistance of the UFG structure to plastic deformation. The fatigue properties of UFG Ti were found to be superior to those of coarse-grained Ti and conventional Ti-6Al-4V, both before and after SLA-treatment. PMID:26703365

  14. In vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste.

    PubMed

    Praxedes-Neto, Otávio José; Borges, Boniek Castillo Dutra; Florêncio-Filho, Cícero; Farias, Arthur Costa Rodrigues; Drennan, John; De Lima, Kenio Costa

    2012-07-01

    This study aimed to evaluate the in vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste. One hundred and twenty teeth from 30 volunteers were selected. The teeth were assigned to four treatments: no treatment (negative control); 37% phosphoric acid-etching (PAE) (positive control); PAE + resin-modified glass ionomer cement (RMGIC); and, PAE + composite resin. Patients brushed teeth with fluoridated (n = 15) or non-fluoridated (n = 15) toothpastes, so that etched enamel was protected with screens and it was not in contact with the brush bristles. Remineralization was evaluated by means of laser fluorescence (LF), environmental scanning electronic microscopy, and energy dispersive spectrometry after extraction. The LF means were compared by means of Wilcoxon and Mann Whitney tests. Environmental scanning electron microscopy scores were compared among the groups using a Kruskal Wallis test, whereas the Ca/P ratio was evaluated by means of an Analysis of Variance with subparcels (treatments) and Tukey's post-hoc test. There were no statistically significant differences between the tooth pastes and between the orthodontic adhesives evaluated. Most teeth presented only partial enamel remineralization. Therefore, the fluoride released by the RMGIC was not enough to cause increased crystal regrowth in the acid-etched enamel. The use of fluoridated toothpaste did not provide positive additional effect. PMID:22298375

  15. The atomic layer deposition array defined by etch-back technique: a new method to fabricate TiO2 nanopillars, nanotubes and nanochannel arrays

    NASA Astrophysics Data System (ADS)

    Huang, Yujian; Pandraud, Grégory; Sarro, Pasqualina M.

    2012-12-01

    A novel fabrication method for nanostructures made of TiO2, a hard-to-etch material with very attractive optical, physical and chemical properties, is developed. This technique ‘atomic layer deposition array defined by etch-back’ (AARDE) enables the formation of a large area of perfectly ordered, high aspect ratio nanostructures, such as nanopillars, nanotubes and nanochannels. High quality functional surfaces and versatile structures with tunable dimensions on various substrates can be realized. With all the process steps being controllable and compatible with integrated circuits, high throughput and repeatability are achieved. To demonstrate the potential of this new technique, results for AARDE TiO2 nanopillar arrays as photonic crystals are also reported.

  16. Optimization of silver-assisted nano-pillar etching process in silicon

    NASA Astrophysics Data System (ADS)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  17. Variability in microleakage observed in a total-etch wet-bonding technique under different handling conditions.

    PubMed

    Tay, F R; Gwinnett, A J; Pang, K M; Wei, S H

    1995-05-01

    Using a stereoscopic clearing protocol and scanning electron microscopy, we investigated the extent and nature of microleakage in a total-etch, current-generation dentin adhesive by a wet-bonding technique under different handling conditions. The hypotheses were that inadequate light curing of the primer or incomplete drying of the primer solvent might adversely affect the sealing ability of an acetone-containing adhesive system. The study consisted of three experimental groups: (I) a control group with an adequate light source and with the primer solvent completely dried; (II) an "inadequate-light" group; and (III) an "incomplete evaporation of primer solvent" group. The extent of microleakage after silver staining and clearing of the specimens was scored based on a modified five-point scale. Nonparametric statistical analysis (Kruskal-Wallis ANOVA) followed by a multiple comparison test (Dunn test) indicated significant differences among the three groups (p < 0.05). SEM examination of the restorative interface revealed that microleakage appeared to be initiated from the bonding resin-hybrid layer interface in all three groups, representing the weak link in the adhesive system. In addition, microleakage was characterized by 5 zones, each delineating a stage in a continuous array of progressively deleterious microleakage patterns variously distributed among the three groups. It was suggested that, while the bonding resin-hybrid layer interface represented the intrinsic weakness in an already much improved dentin adhesive, extrinsic factors such as the adequacy of the curing light and, more importantly, complete removal of the primer solvents can and should be avoided to preserve the structural integrity of the marginal seal. PMID:7790594

  18. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    NASA Astrophysics Data System (ADS)

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-10-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II-V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease.

  19. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  20. The Effect of Carbon Dioxide (CO2) Laser on Sandblasting with Large Grit and Acid Etching (SLA) Surface

    PubMed Central

    Foroutan, Tahereh; Ayoubian, Nader

    2013-01-01

    Introduction: The purpose of this study was to investigate the effect of 6W power Carbon Dioxide Laser (CO2) on the biologic compatibility of the Sandblasting with large grit and acid etching (SLA) titanium discs through studying of the Sarcoma Osteogenic (SaOS-2) human osteoblast-like cells viability. Methods: Sterilized titanium discs were used together with SaOS-2 human osteoblast-like cells. 6 sterilized SLA titanium discs of the experimental group were exposed to irradiation by CO2 laser with a power of 6W and 10.600nm wavelength, at fixed frequency of 80Hz during 45 seconds in both pulse and non-contact settings. SaOS-2 human osteoblast-like cells were incubated under 37°C in humid atmosphere (95% weather, 5% CO2) for 72 hours. MTT test was performed to measure the ratio level of cellular proliferation. Results: The results indicated that at 570nm wavelength, the 6W CO2 laser power have not affected the cellular viability. Conclusion: CO2 laser in 6w power has had no effect on the biologic compatibility of the SLA titanium surface PMID:25606313

  1. Selective Etching of Semiconductor Glassivation

    NASA Technical Reports Server (NTRS)

    Casper, N.

    1982-01-01

    Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

  2. Precise identification of <1 0 0> directions on Si{0 0 1} wafer using a novel self-aligning pre-etched technique

    NASA Astrophysics Data System (ADS)

    Singh, S. S.; Veerla, S.; Sharma, V.; Pandey, A. K.; Pal, P.

    2016-02-01

    Micromirrors with a tilt angle of 45° are widely used in optical switching and interconnect applications which require 90° out of plane reflection. Silicon wet bulk micromachining based on surfactant added TMAH is usually employed to fabricate 45° slanted walls at the < 1 0 0> direction on Si≤ft\\{0 0 1\\right\\} wafers. These slanted walls are used as 45° micromirrors. However, the appearance of a precise 45° ≤ft\\{0 1 1\\right\\} wall is subject to the accurate identification of the < 1 0 0> direction. In this paper, we present a simple technique based on pre-etched patterns for the identification of < 1 0 0> directions on the Si≤ft\\{0 0 1\\right\\} surface. The proposed pre-etched pattern self-aligns itself at the < 1 0 0> direction while becoming misaligned at other directions. The < 1 0 0> direction is determined by a simple visual inspection of pre-etched patterns and does not need any kind of measurement. To test the accuracy of the proposed method, we fabricated a 32 mm long rectangular opening with its sides aligned along the < 1 0 0> direction, which is determined using the proposed technique. Due to the finite etch rate of the ≤ft\\{1 1 0\\right\\} plane, undercutting occurred, which was measured at 12 different locations along the longer edge of the rectangular strip. The mean of these undercutting lengths, measured perpendicular to the mask edge, is found to be 13.41 μm with a sub-micron standard deviation of 0.38 μm. This level of uniform undercutting indicates that our method of identifying the < 1 0 0> direction is precise and accurate. The developed method will be extremely useful in fabricating arrays of 45° micromirrors.

  3. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  4. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  5. Effects of Dextrose and Lipopolysaccharide on the Corrosion Behavior of a Ti-6Al-4V Alloy with a Smooth Surface or Treated with Double-Acid-Etching

    PubMed Central

    Faverani, Leonardo P.; Assunção, Wirley G.; de Carvalho, Paulo Sérgio P.; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T.; Barao, Valentim A.

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (p<0.05) for the Ti-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (p<0.05). The acid-treated groups showed a significant increase in Cdl values and reduced Rp values (p<0.05, t-test). According to the topography, there was an increase in surface roughness (R2 = 0.726, p<0.0001 for the smooth surface; R2 = 0.405, p = 0.036 for the double-acid-etching-treated surface). The microhardness of the smooth Ti-6Al-4V alloy decreased (p<0.05) and that of the treated Ti-6Al-4V alloy increased (p<0.0001). Atomic force microscopy showed changes in the microstructure of the Ti-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no

  6. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    NASA Astrophysics Data System (ADS)

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  7. Sputter etching of hemispherical bearings

    NASA Technical Reports Server (NTRS)

    Schiesser, R. J.

    1972-01-01

    Technique was developed for fabricating three dimensional pumping grooves on gas bearings by sputter etching. Method eliminates problems such as groove nonuniformity, profile, and finish, which are associated with normal grooving methods.

  8. 24% Indigenously Prepared Ethylene Diamine Tetra Acetic Acid Compared to Self-Etching Adhesives and their Effect on Shear Bond Strength of Composites in Primary Teeth: An In-vitro Study

    PubMed Central

    Nagar, Priya; Tandil, Yogesh L.; T.P., Chandru; Gupta, Anamika; Kalaria, Devendra; Kumar, Prafful

    2015-01-01

    Background: Over the years, it has been known that 34% phosphoric acid is the benchmark in etchants with the best shear bond strength shown with composites in primary teeth. However, with latest technological advancements and innovations, in order to reduce the number of steps and less damage to the tooth structure, non-rinse conditioner (NRC) & Single-Etch and various other etchants have been tried and tested. These etchants have been found to have shear bond strength comparable to phosphoric acid. In this study, indigenously prepared 24% ethylenediaminetetraacetic acid (EDTA) has been compared with established etchants, as to prove if their shear bond strength was closely related. As it is a well-known fact that EDTA could be less damaging to the enamel during etching and hence can be an alternative for etching of primary teeth. Materials and Methods: For the study 60 caries-free primary molars were used, they were sectioned in the middle, after making area for bonding; the marked area was then etched using different etchants for 30 s. Each of the teeth was then rinsed and bonded with composite resin and thermocycling was done. Shear bond strength testing was done on the composite using Universal Testing Machine. Results: Results of the study showed that phosphoric acid showed the highest bond strength, closely followed by Single Etch (Adper Prompt) and NRC, then by EDTA. Conclusions: About 24% EDTA can be another comparable replacement for phosphoric acid if used with a Single Etch Primer, like Prime and Bond NT on primary teeth. 34% phosphoric acid has the highest bond strength values with composite resin. Single etch followed by NRC has the second and third highest bond strength values, which are comparable to phosphoric acid. PMID:26464540

  9. Sharp high-aspect-ratio AFM tips fabricated by a combination of deep reactive ion etching and focused ion beam techniques.

    PubMed

    Caballero, David; Villanueva, Guillermo; Plaza, Jose Antonio; Mills, Christopher A; Samitier, Josep; Errachid, Abdelhamid

    2010-01-01

    The shape and dimensions of an atomic force microscope tip are crucial factors to obtain high resolution images at the nanoscale. When measuring samples with narrow trenches, inclined sidewalls near 90 degrees or nanoscaled structures, standard silicon atomic force microscopy (AFM) tips do not provide satisfactory results. We have combined deep reactive ion etching (DRIE) and focused ion beam (FIB) lithography techniques in order to produce probes with sharp rocket-shaped silicon AFM tips for high resolution imaging. The cantilevers were shaped and the bulk micromachining was performed using the same DRIE equipment. To improve the tip aspect ratio we used FIB nanolithography technique. The tips were tested on narrow silicon trenches and over biological samples showing a better resolution when compared with standard AFM tips, which enables nanocharacterization and nanometrology of high-aspect-ratio structures and nanoscaled biological elements to be completed, and provides an alternative to commercial high aspect ratio AFM tips. PMID:20352882

  10. Influence of Air Abrasion and Sonic Technique on Microtensile Bond Strength of One-Step Self-Etch Adhesive on Human Dentin

    PubMed Central

    Anja, Baraba; Walter, Dukić; Nicoletta, Chieffi; Marco, Ferrari; Pezelj Ribarić, Sonja; Ivana, Miletić

    2015-01-01

    The purpose of this in vitro study was to evaluate the microtensile bond strength of one-step self-etch adhesive to human dentin surface modified with air abrasion and sonic technique and to assess the morphological characteristics of the pretreated dentin surface. The occlusal enamel was removed to obtain a flat dentin surface for thirty-six human molar teeth. The teeth were randomly divided into three experimental groups (n = 12 per group), according to the pretreatment of the dentin: (1) control group, (2) air abrasion group, and (3) sonic preparation group. Microtensile bond strength test was performed on a universal testing machine. Two specimens from each experimental group were subjected to SEM examination. There was no statistically significant difference in bond strength between the three experimental groups (P > 0.05). Mean microtensile bond strength (MPa) values were 35.3 ± 12.8 for control group, 35.8 ± 13.5 for air abrasion group, and 37.7 ± 12.0 for sonic preparation group. The use of air abrasion and sonic preparation with one-step self-etch adhesive does not appear to enhance or impair microtensile bond strength in dentin. PMID:25879053

  11. Bioanalytical applications of isothermal nucleic acid amplification techniques.

    PubMed

    Deng, Huimin; Gao, Zhiqiang

    2015-01-01

    The most popular in vitro nucleic acid amplification techniques like polymerase chain reaction (PCR) including real-time PCR are costly and require thermocycling, rendering them unsuitable for uses at point-of-care. Highly efficient in vitro nucleic acid amplification techniques using simple, portable and low-cost instruments are crucial in disease diagnosis, mutation detection and biodefense. Toward this goal, isothermal amplification techniques that represent a group of attractive in vitro nucleic acid amplification techniques for bioanalysis have been developed. Unlike PCR where polymerases are easily deactivated by thermally labile constituents in a sample, some of the isothermal nucleic acid amplification techniques, such as helicase-dependent amplification and nucleic acid sequence-based amplification, enable the detection of bioanalytes with much simplified protocols and with minimal sample preparations since the entire amplification processes are performed isothermally. This review focuses on the isothermal nucleic acid amplification techniques and their applications in bioanalytical chemistry. Starting off from their amplification mechanisms and significant properties, the adoption of isothermal amplification techniques in bioanalytical chemistry and their future perspectives are discussed. Representative examples illustrating the performance and advantages of each isothermal amplification technique are discussed along with some discussion on the advantages and disadvantages of each technique. PMID:25467448

  12. Ethylene Diamine Tetraacetic Acid Etched Quantum Dots as a "Turn-On" Fluorescence Probe for Detection of Trace Zinc in Food.

    PubMed

    Liu, Wei; Wei, Fangdi; Xu, Guanhong; Wu, Yanzi; Hu, Chunting; Song, Quan; Yang, Jing; Hu, Qin

    2016-06-01

    In the present paper, a simple and rapid "turn-on" fluorescence sensor for Zn2+ based on ethylene diamine tetraacetic acid (EDTA) etched CdTe quantum dots (QDs) was developed. First, the initial bright fluorescence of mercaptopropionic acid (MPA) capped CdTe QDs was effectively quenched by EDTA, and then the presence of Zn2+ could "turn on" the weak fluorescence of QDs quenched by EDTA due to the formation of ZnS passivation shell. The increase of fluorescence intensity of EDTA etched QDs was found to be linear with the concentration of Zn2+ added. Under the optimum conditions, the calibration curve of this method showed good linearity in the concentration range of 9.1-1 09.1 μM of Zn2+ with the correlation coefficient R2 = 0.998. The limit of detection (3σ/K) was 2 μM. The developed QDs-based sensor was successfully applied to detect trace zinc in zinc fortified table salts and energy drinks with satisfactory results. PMID:27427745

  13. Etching of nanostructures on soda-lime glass.

    PubMed

    Wang, Elmer; Zhao, Yang

    2014-07-01

    Nanostructures were created on the surface of optical glass using nanosphere lithography. The substrates were etched with vapor-phase hydrofluoric (HF) acid. The etching rate was studied and compared with existing results of wet and dry HF etching. An empirical etching rate formula is found for etching depth up to 300 nm. The subsequent artificial material layer demonstrated enhanced transmittance in optical wavelengths. PMID:24978727

  14. Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

    PubMed

    Reshak, A H; Shahimin, M M; Shaari, S; Johan, N

    2013-11-01

    The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells. PMID:24139943

  15. Tuning photonic crystal nanocavity modes by wet chemical digital etching

    NASA Astrophysics Data System (ADS)

    Hennessy, K.; Badolato, A.; Tamboli, A.; Petroff, P. M.; Hu, E.; Atatüre, M.; Dreiser, J.; Imamoǧlu, A.

    2005-07-01

    We have developed a wet chemical digital etching technique for tuning the resonant wavelengths of photonic crystal (PC) nanocavities over a wide range of 80nm in precise 2-3nm steps while preserving high cavity quality factors. In one tuning step, a few monolayers of material are removed from the cavity surface by etching a self-formed native oxide in 1mol citric acid. Due to the self-limiting oxide thickness, total tuning range is based only on the number of etch steps, resulting in a highly controlled, digital tuning ability. We have characterized the tuning behavior of GaAs PC defect cavities of both square and triangular lattice symmetry and proven the effectiveness of this method by tuning a mode into resonance with the charged exciton, and then later the biexciton, transition of a single InAs /GaAs self-assembled quantum dot.

  16. Evaluation of Meterorite Amono Acid Analysis Data Using Multivariate Techniques

    NASA Technical Reports Server (NTRS)

    McDonald, G.; Storrie-Lombardi, M.; Nealson, K.

    1999-01-01

    The amino acid distributions in the Murchison carbonaceous chondrite, Mars meteorite ALH84001, and ice from the Allan Hills region of Antarctica are shown, using a multivariate technique known as Principal Component Analysis (PCA), to be statistically distinct from the average amino acid compostion of 101 terrestrial protein superfamilies.

  17. Optimal conditions for the preparation of superhydrophobic surfaces on al substrates using a simple etching approach

    NASA Astrophysics Data System (ADS)

    Ruan, Min; Li, Wen; Wang, Baoshan; Luo, Qiang; Ma, Fumin; Yu, Zhanlong

    2012-07-01

    Many methods have been proposed to develop the fabrication techniques for superhydrophobic surfaces. However, such techniques are still at their infant stage and suffer many shortcomings. In this paper, the superhydrophobic surfaces on an Al substrate were prepared by a simple etching method. Effects of etching time, modifiers, and modification concentration and time were investigated, and optimal conditions for the best superhydrophobicity were studied. It was demonstrated that for etching the aluminum plate in Beck's dislocation, if the etching time was 15 s, modifier was Lauric acid-ethanol solution, and modification concentration and time was 5% and 1.5 h, respectively, the surface exhibited a water contact angle as high as 167.5° and a contact angle hysteresis as low as 2.3°.

  18. Etching of Crystalline ZnO Surfaces upon Phosphonic Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers.

    PubMed

    Ostapenko, Alexandra; Klöffel, Tobias; Eußner, Jens; Harms, Klaus; Dehnen, Stefanie; Meyer, Bernd; Witte, Gregor

    2016-06-01

    Functionalization of metal oxides by means of covalently bound self-assembled monolayers (SAMs) offers a tailoring of surface electronic properties such as their work function and, in combination with its large charge carrier mobility, renders ZnO a promising conductive oxide for use as transparent electrode material in optoelectronic devices. In this study, we show that the formation of phosphonic acid-anchored SAMs on ZnO competes with an unwanted chemical side reaction, leading to the formation of surface precipitates and severe surface damage at prolonged immersion times of several days. Combining atomic force microscopy (AFM), X-ray diffraction (XRD), and thermal desorption spectroscopy (TDS), the stability and structure of the aggregates formed upon immersion of ZnO single crystal surfaces of different orientations [(0001̅), (0001), and (101̅0)] in phenylphosphonic acid (PPA) solution were studied. By intentionally increasing the immersion time to more than 1 week, large crystalline precipitates are formed, which are identified as zinc phosphonate. Moreover, the energetics and the reaction pathway of this transformation have been evaluated using density functional theory (DFT), showing that zinc phosphonate is thermodynamically more favorable than phosphonic acid SAMs on ZnO. Precipitation is also found for phosphonic acids with fluorinated aromatic backbones, while less precipitation occurs upon formation of SAMs with phenylphosphinic anchoring units. By contrast, no precipitates are formed when PPA monolayer films are prepared by sublimation under vacuum conditions, yielding smooth surfaces without noticeable etching. PMID:27159837

  19. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  20. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  1. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  2. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    PubMed

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. PMID:26918658

  3. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  4. New phase formation in titanium aluminide during chemical etching

    SciTech Connect

    Takasaki, Akito; Ojima, Kozo; Taneda, Youji . Dept. of Mathematics and Physics)

    1994-05-01

    A chemical etching technique is widely used for metallographic observation. Because this technique is based on a local corrosion phenomenon on a sample, the etching mechanism, particularly for two-phase alloys, can be understood by electrochemical consideration. This paper describes formation of a new phase in a Ti-45Al (at.%) titanium aluminide during chemical etching, and the experimental results are discussed electrochemically.

  5. Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

    PubMed

    Song, Qingfang

    2015-05-01

    Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result. PMID:25771134

  6. Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects.

    PubMed

    Grant, Nicholas E

    2016-01-01

    A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<10(12) cm(-3)). PMID:26779939

  7. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  8. Nanofabrication on monocrystalline silicon through friction-induced selective etching of Si3N4 mask

    PubMed Central

    2014-01-01

    A new fabrication method is proposed to produce nanostructures on monocrystalline silicon based on the friction-induced selective etching of its Si3N4 mask. With low-pressure chemical vapor deposition (LPCVD) Si3N4 film as etching mask on Si(100) surface, the fabrication can be realized by nanoscratching on the Si3N4 mask and post-etching in hydrofluoric acid (HF) and potassium hydroxide (KOH) solution in sequence. Scanning Auger nanoprobe analysis indicated that the HF solution could selectively etch the scratched Si3N4 mask and then provide the gap for post-etching of silicon substrate in KOH solution. Experimental results suggested that the fabrication depth increased with the increase of the scratching load or KOH etching period. Because of the excellent masking ability of the Si3N4 film, the maximum fabrication depth of nanostructure on silicon can reach several microns. Compared to the traditional friction-induced selective etching technique, the present method can fabricate structures with lesser damage and deeper depths. Since the proposed method has been demonstrated to be a less destructive and flexible way to fabricate a large-area texture structure, it will provide new opportunities for Si-based nanofabrication. PMID:24940174

  9. Reactive Ion Etching for Randomly Distributed Texturing of Multicrystalline Silicon Solar Cells

    SciTech Connect

    ZAIDI, SALEEM H

    2002-05-01

    The quality of low-cost multicrystalline silicon (mc-Si) has improved to the point that it forms approximately 50% of the worldwide photovoltaic (PV) power production. The performance of commercial mc-Si solar cells still lags behind c-Si due in part to the inability to texture it effectively and inexpensively. Surface texturing of mc-Si has been an active field of research. Several techniques including anodic etching [1], wet acidic etching [2], lithographic patterning [3], and mechanical texturing [4] have been investigated with varying degrees of success. To date, a cost-effective technique has not emerged.

  10. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  11. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity

    NASA Astrophysics Data System (ADS)

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-01

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 μg ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical

  12. Dry etching technologies for reflective multilayer

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  13. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study.

    PubMed

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  14. Adult Stem Cells Properties in Terms of Commitment, Aging and Biological Safety of Grit-Blasted and Acid-Etched Ti Dental Implants Surfaces

    PubMed Central

    Gardin, Chiara; Ferroni, Letizia; Bressan, Eriberto; Calvo - Guirado, José L.; Degidi, Marco; Piattelli, Adriano; Zavan, Barbara

    2014-01-01

    Titanium (Ti) is one of the most widely used biomaterials for manufacturing dental implants. The implant surface properties strongly influence osseointegration. The aim of the present study was to in vitro investigate the characteristics of Ti dental implants in terms of mutagenicity, hemocompatibility, biocompatibility, osteoinductivity and biological safety. The Ames test was used to test the mutagenicity of the Ti dental implants, and the hemolysis assay for evaluating their hemocompatibility. Human adipose - derived stem cells (ADSCs) were then seeded onto these implants in order to evaluate their cytotoxicity. Gene expression analyzing with real-time PCR was carried out to investigate the osteoinductivity of the biomaterials. Finally, the genetic stability of the cells cultured onto dental implants was determined by karyotyping. Our results demonstrated that Ti dental implants are not mutagenic, do not cause hemolysis, and are biocompatible. The MTT assay revealed that ADSCs, seeded on Ti dental implants, proliferate up to 30 days in culture. Moreover, ADSCs loaded on Ti dental implants show a substantial expression of some osteoblast specific markers, such as COL1A1, OPN, ALPL, and RUNX2, as well as chromosomal stability after 30 days of culture in a medium without osteogenic factors. In conclusion, the grit-blasted and acid-etched treatment seems to favor the adhesion and proliferation of ADSCs and improve the osteoinductivity of Ti dental implant surfaces. PMID:25635249

  15. Effect of erbium-doped: yttrium, aluminium and garnet laser irradiation on the surface microstructure and roughness of sand-blasted, large grit, acid-etched implants

    PubMed Central

    Lee, Ji-Hun; Kwon, Young-Hyuk; Herr, Yeek; Shin, Seung-Il

    2011-01-01

    Purpose The present study was performed to evaluate the effect of erbium-doped: yttrium, aluminium and garnet (Er:YAG) laser irradiation on sand-blasted, large grit, acid-etched (SLA) implant surface microstructure according to varying energy levels and application times of the laser. Methods The implant surface was irradiated by the Er:YAG laser under combined conditions of 100, 140, or 180 mJ/pulse and an application time of 1 minute, 1.5 minutes, or 2 minutes. Scanning electron microscopy (SEM) was used to examine the surface roughness of the specimens. Results All experimental conditions of Er:YAG laser irradiation, except the power setting of 100 mJ/pulse for 1 minute and 1.5 minutes, led to an alteration in the implant surface. SEM evaluation showed a decrease in the surface roughness of the implants. However, the difference was not statistically significant. Alterations of implant surfaces included meltdown and flattening. More extensive alterations were present with increasing laser energy and application time. Conclusions To ensure no damage to their surfaces, it is recommended that SLA implants be irradiated with an Er:YAG laser below 100 mJ/pulse and 1.5 minutes for detoxifying the implant surfaces. PMID:21811689

  16. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    PubMed

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method. PMID:26418567

  17. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu(2+)/bicinchoninic acid pair with improved sensitivity.

    PubMed

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2016-01-14

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu(2+). The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu(2+)/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu(2+) and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml(-1)) and a wide working range (0.5 to 1000 μg ml(-1)) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications. PMID:26669539

  18. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    PubMed Central

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  19. The Influence of Low-Level Laser on Osseointegration Around Machined and Sandblasted Acid-Etched Implants: A Removal Torque and Histomorphometric Analyses.

    PubMed

    Teixeira, Eduardo Rolim; Torres, Marco Antônio Rambo Osório; Meyer, Kleber Ricardo Monteiro; Zani, Sabrina Rebollo; Shinkai, Rosemary Sadami Arai; Grossi, Márcio Lima

    2015-08-01

    Evaluation of the influence of laser application on osseointegration around implants with different surface characteristics is limited. This study aims to evaluate the influence of low-level lasers on the early stages of osseointegration. Ninety-six external hex implants (3.75 mm × 5.0 mm) were placed in 24 rabbits-one machined and one sandblasted acid-etched per tibia. The rabbits were later divided into the laser group, which received a total dose of 24 J/cm(2) of gallium-aluminum-arsenide laser over 15 days, and a control group. At 16 and 30 days after surgery, removal torque and histomorphometric analyses were performed. No statistical differences in removal torque or histomorphometric analyses were verified between laser and control groups regardless of implant surface (P > .05). Time was the only variable presenting significant differences between measurements (P < .05). Low-level laser had no significant short-term effect on bone-to-implant contact and removal torque values regardless of implant surface characteristics. PMID:23834724

  20. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    PubMed Central

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  1. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  2. Regulation of Osteoblast Differentiation by Acid-Etched and/or Grit-Blasted Titanium Substrate Topography Is Enhanced by 1,25(OH)2D3 in a Sex-Dependent Manner.

    PubMed

    Olivares-Navarrete, Rene; Hyzy, Sharon L; Boyan, Barbara D; Schwartz, Zvi

    2015-01-01

    This study assessed contributions of micron-scale topography on clinically relevant titanium (Ti) to differentiation of osteoprogenitor cells and osteoblasts; the interaction of this effect with 1α,25-dihydroxyvitamin D3 (1α,25(OH)2D3); and if the effects are sex-dependent. Male and female rat bone marrow cells (BMCs) were cultured on acid-etched (A, R a = 0.87 μm), grit-blasted (GB, R a = 3.90 μm), or grit-blasted/acid-etched (SLA, R a = 3.22 μm) Ti. BMCs were sensitive to surface topography and underwent osteoblast differentiation. This was greatest on SLA; acid etching and grit blasting contributed additively. Primary osteoblasts were also sensitive to SLA, with less effect from individual structural components, demonstrated by enhanced local factor production. Sex-dependent responses of BMCs to topography varied with parameter whereas male and female osteoblasts responded similarly to surface treatment. 1α,25(OH)2D3 enhanced cell responses on all surfaces similarly. Effects were sex-dependent and male cells grown on a complex microstructured surface were much more sensitive than female cells. These results indicate that effects of the complex SLA topography are greater than acid etching or grit blasting alone on multipotent BMCs and committed osteoblasts and that individual parameters are sex-specific. The effect of 1α,25(OH)2D3 was sex dependent. The results also suggest that levels of 1α,25(OH)2D3 in the patient may be important in osseointegration. PMID:25945332

  3. Graphene nanoribbons: Relevance of etching process

    SciTech Connect

    Simonet, P. Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  4. Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask

    NASA Astrophysics Data System (ADS)

    Jin, Joo-Young; Yoo, Sunghyun; Bae, Jae-Sung; Kim, Yong-Kweon

    2014-01-01

    This research highlights a superior glass-wet-etch technique which enables a glass wafer to be etched for more than 20 h in 49 wt% hydrofluoric acid (HF) only with Cr/Au film and a common positive photoresist, AZ4330. We demonstrated that pits on the wet-etched glass wafer were generated not only due to HF diffusion through the Cr/Au film but also due to pinholes on the Cr/Au films created by the diffusion of the Cr/Au etchant through a photoresist etching-mask during the Cr/Au wet etching process. These two types of diffusion, HF diffusion and Cr/Au etchant diffusion, were eliminated by the thermal curing of a photoresist (PR), AZ4330, before the Cr/Au wet etching process. The curing process allowed the PR to dehydrate, increased the hydrophobicity, and prevented the diffusion of the hydrophilic HF and Cr/Au etchant. Optimization of the curing process was performed, showing that curing at 130 °C for 20 min was the proper condition. With the optimized process, a 525 µm thick borosilicate glass wafer was penetrated with 49%wt HF. A fused silica wafer 525 µm thick was also wet-etched and penetrated with 49 wt% HF at 10 h. Moreover, no pits were found in wet etching of the fused silica for 20 h in 49 wt% HF. These findings demonstrate that the proposed technique allows the wet etching of a glass wafer for more than 20 h in 49%wt HF, the best result thus far. We fabricated a glass substrate with a 217.0 µm deep cavity and a penetrating through-via using the proposed technique, proving the feasibility of the product as an optical component with a surface roughness of 45.5 Å in the cavity.

  5. Distinguishing shocked from tectonically deformed quartz by the use of the SEM and chemical etching

    USGS Publications Warehouse

    Gratz, A.J.; Fisler, D.K.; Bohor, B.F.

    1996-01-01

    Multiple sets of crystallographically-oriented planar deformation features (PDFs) are generated by high-strain-rate shock waves at pressures of > 12 GPa in naturally shocked quartz samples. On surfaces, PDFs appear as narrow (50-500 nm) lamellae filled with amorphosed quartz (diaplectic glass) which can be etched with hydrofluoric acid or with hydrothermal alkaline solutions. In contrast, slow-strain-rate tectonic deformation pressure produces wider, semi-linear and widely spaced arrays of dislocation loops that are not glass filled. Etching samples with HF before examination in a scanning electron microscope (SEM) allows for unambiguous visual distinction between glass-filled PDFs and glass-free tectonic deformation arrays in quartz. This etching also reveals the internal 'pillaring' often characteristic of shock-induced PDFs. This technique is useful for easily distinguishing between shock and tectonic deformation in quartz, but does not replace optical techniques for characterizing the shock features.

  6. Metal etching with reactive gas cluster ion beams using pickup cell

    SciTech Connect

    Toyoda, Noriaki; Yamada, Isao

    2012-11-06

    Mixed gas cluster ion beams were formed using pickup cell for metal etching. O{sub 2} neutral clusters pick up acetic acid and formed mixed cluster beam. By using O{sub 2}-GCIB with acetic acid, enhancement of Cu etching was observed. Because of dense energy deposition by GCIB, etching of Cu proceeds by CuO formation, enhancement of chemical reaction with acetic acid and desorption of etching products. Surface roughening was not observed on poly crystalline Cu because of the small dependence of etching rate on crystal orientation. Halogen free and low-temperature metal etching with GCIB using pickup cell is possible.

  7. Five-year retrospective radiographic follow-up study of dental implants with sandblasting with large grit, and acid etching-treated surfaces

    PubMed Central

    2015-01-01

    Objectives The purpose of this study is to evaluate five-year radiographic follow-up results of the Korean sandblasting with large grit, and acid etching (SLA)-treated implant system. Materials and Methods The subjects of the study are 54 patients who have been followed-up to date, of the patients who underwent implant surgery from May 1, 2009 to April 30, 2011. In all, 176 implant placements were performed. Radiographs were taken before the first surgery, immediately after the first and second surgeries, immediately and six months after the final prosthesis installation, and every year after that. Bone loss was evaluated by the method suggested by Romanos and Nentwig. Results A total of 176 implant placements were performed-122 in men and 54 in women. These patients have been followed-up for an average of 4.9 years. In terms of prosthetic appliances, there were 156 bridges and 20 single prostheses. Nine implants installed in the maxillary molar area, three in the mandibular molar area and two in the maxillary premolar area were included in group M, with bone loss less than 2 mm at the crestal aspect of the implant. Of these, eight implants were single prostheses. In all, six implants failed-four in the mandible and two in the maxilla. All of these failures occurred in single-implant cases. The implant survival rate was 98.1% on the maxilla and 94.3% on the mandible, with an overall survival of 96.6%. Conclusion Within the limitations of this study, implants with the SLA surface have a very superior survival rate in relatively poor bone environments such as the maxilla. PMID:26734558

  8. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  9. Etching Semiconductors With Beams Of Reactive Atoms

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K.; Giapis, Konstantinos P.; Moore, Teresa A.

    1995-01-01

    Method of etching semiconductors with energetic beams of electrically neutral, but chemically reactive, species undergoing development. Enables etching of straight walls into semiconductor substrates at edges of masks without damage to underlying semiconductor material. In addition to elimination of charge damage, technique reduces substrate bombardment damage because translational energy of neutral species in range 2-12 eV, below damage threshold of many semiconductor materials. Furthermore, low-energy neutrals cause no mask erosion allowing for etching features with very high aspect ratios.

  10. Research on wet etching at MEMS torsion mirror optical switch

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Wang, Jifeng; Luo, Yuan

    2002-10-01

    Etching is a very important technique at MEMS micromachining. There are two kinds of etching processing, the one is wet etching and the other is dry etching. In this paper, wet selective etching with KOH and tetramethyl ammonium hydroxide (TMAH) etchants is researched in order to make a torsion mirror optical switch. The experiments results show that TMAH with superphosphate is more suitable at MEMS torsion mirror optical switch micromachining than KOH, and it also has good compatibility with IC processing. Also our experiments results show some different with other reported research data. More work will be done to improve the yield rate of MEMS optical switch.

  11. Nanoparticle-based etching of silicon surfaces

    SciTech Connect

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  12. Epoxy bond and stop etch fabrication method

    DOEpatents

    Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  13. Electrochemical etching of a shape memory alloy using new electrolyte solutions

    NASA Astrophysics Data System (ADS)

    Mineta, Takashi

    2004-01-01

    In this paper we present the electrochemical etching characteristics of a shape memory alloy (SMA) using new electrolytes of inorganic salt in alcohol, in comparison with conventional H2SO4-methanol solution. It has become apparent that pattern etching of SMA sheets can be carried out in electrolyte solutions using LiCl and NH4Cl. Especially, in the case of 1 mol l-1 LiCl-ethanol, good etching properties such as a controllable low etch rate of about 3.5 µm min-1, high etch factor (etching depth/side etching width) of 1.5, uniform etching depth and smooth etched surface can be obtained. Throughout etching can be carried out by using a back-side dummy metal of Ni or Cu. This etching technique has been applied to the micromachining of SMA sheet for fabrication of microactuators.

  14. Ion-Assisted Plasma Etching

    NASA Astrophysics Data System (ADS)

    Wang, C. Daniel; Abraham-Shrauner, Barbara

    1996-11-01

    We analyze plasma etching of two-dimensional, long trenches where directed ions modeled by drifted Maxwellian distribution functions and isotropic neutral molecules contribute to the etch rate. Analytic expressions for the etch rates enable the user to plot the etch profiles by using standard computer packages for nonlinear first-order ordinary differential equations for the point and its slope. First, etch profiles are shown for ion-assisted etching where the thermal etching of the neutrals is enhanced by the ions. Second, we show etch profiles of a multiple layer device where one layer is n-type silicon (arsenic doped) that etches isotropically (G.S. Oehrlein, "Reactive Ion Etching," Handbook of Plasma Processing, Technology, Ed. S.M. Rossnagel, et al., Noyes Pub., NJ, 1990) The etch rates for the other layers are in the ion flux-limited regime. The lateral etching of the n-type silicon illustrates the necessity of sidewall passivation for this structure.

  15. Galvanic etch stop for Si in KOH

    NASA Astrophysics Data System (ADS)

    Connolly, E. J.; French, P. J.; Xia, X. H.; Kelly, J. J.

    2004-08-01

    Etch stops and etch-stopping techniques are essential 'tools' for 2D and 3D MEMS devices. Until now, use of a galvanic etch stop (ES) for micromachining in alkaline solutions was usually prohibited due to the large Au:Si area needed and/or high oxygen content required to achieve the ES. We report a new galvanic ES which requires a Au:exposed silicon area ratio of only ~1. Thus for the first time a practical galvanic ES for KOH has been achieved. The ES works by adding small amounts of sodium hypochlorite, NaOCl, to KOH solutions. Essentially the NaOCl increases the oxygen content in the KOH etchant. The dependancy of the galvanic ES on KOH concentration and temperature is investigated. Also, we report on the effects of the added NaOCl on etch rates. SEM images are used to examine the galvanically etch-stopped membranes and their surface morphology. For 33% KOH solutions the galvanic etch stop worked well, producing membranes with uniform thickness ~6 µm (i.e. slightly greater than the deposited epilayer). For 20% KOH solutions, the galvanic etch stop still worked, but the resulting membranes were a little thicker (~10 µm).

  16. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  17. Assessment of Microleakage of Class V Composite Resin Restoration Following Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) Laser Conditioning and Acid Etching with Two Different Bonding Systems

    PubMed Central

    Arbabzadeh Zavareh, Farahnaz; Samimi, Pouran; Birang, Reza; Eskini, Massoumeh; Bouraima, Stephane Ayoub

    2013-01-01

    Introduction: The use of laser for cavity preparation or conditioning of dentin and enamelsurfaces as an alternative for dental tissue acid-etch have increased in recent years. Theaim of this in vitro study was to compare microleakage at enamel-composite and dentincompositeinterfaces following Erbium-Doped Yttrium Aluminum Garnet(Er:YAG) laserconditioning or acid-etching of enamel and dentin, hybridized with different bonding systems. Methods: Class V cavities were prepared on the lingual and buccal surfaces of 50 recentlyextracted intact human posterior teeth with occlusal margin in the enamel and gingival marginin the dentin. The cavities were randomly assigned to five groups: group1:conditioned withlaser (Energy=120mJ, Frequency=10Hz, Pulse duration=100μs for Enamel and Energy=80mJ,Frequency=10Hz, Pulse duration=100μs for Dentin) + Optibond FL, group2:conditioned withlaser + etching with 35% phosphoric acid + Optibond FL, group3:conditioned with laser+ Clearfil SE Bond, group 4 (control):acid etched with 35% phosphoric acid + OptibondFL, group 5 (control): Clearfil SE Bond. All cavities were restored using Point 4 compositeresin. All samples were stored in distilled water at 37°c for 24 h, then were thermocycled for500 cycles and immersed in 50% silver nitrate solution for 24 h. The teeth were sectionedbucco-lingually to evaluate the dye penetration. Kruskal-Wallis & Mann-Whitney testswere used for statistical analysis. Results: In occlusal margins, the least microleakage showed in groups 2, 4 and 5. Themaximum microleakage was observed in group 3 (P=0.009). In gingival margins, the leastmicroleakage was recorded in group2, while the most microleakage was found in group5 (P=0.001). Differences between 5 study groups were statistically significant (P<0.05).The microleakage scores were higher at the gingival margins. Conclusion: The use of the Er:YAG laser for conditioning with different dentin adhesivesystems influenced the marginal sealing of composite resin

  18. A new technique to determine organic and inorganic acid contamination.

    PubMed

    Vo, Evanly

    2002-01-01

    A new acid indicator pad was developed for the detection of acid breakthrough of gloves and chemical protective clothing. The pad carries a reagent which responds to acid contaminant by producing a color change. The pad was used to detect both organic and inorganic acids permeating through glove materials using the modified ASTM F-739 and direct permeability testing procedures. Breakthrough times for each type of glove were determined, and found to range from 4 min to > 4 h for propionic acid, from 3 min to > 4 h for acrylic acid, and from 26 min to > 4 h for HCl. A quantification was performed for propionic and acrylic acids following solvent desorption and gas chromatography. Both acids exhibited > 99% adsorption [the acid and its reactivity (the acid reacted with an indicator to contribute the color change)] on the pads at a spiking level of 1.8 microL for each acid. Acid recovery during quantification was calculated for each acid, ranging from 52-72% (RSD < or = 4.0%) for both acids over the spiking range 0.2-1.8 microL. The quantitative mass of the acids on the pads at the time of breakthrough detection ranged from 260-282 and 270-296 microg cm(-2) for propionic acid and acrylic acid, respectively. The new colorimetric indicator pad should be useful in detecting and collecting acid permeation samples through gloves and chemical protective clothing in both laboratory and field studies, for quantitative analysis. PMID:11827389

  19. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  20. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  1. Influence of Interface Structure on Chemical Etching Process for Air Gap of Microelectromechanical System Based on Surface Micromachining

    NASA Astrophysics Data System (ADS)

    Yoon, Young; Kim, Joon; Polla, Dennis.; Shin, Young

    1998-12-01

    This paper analyses the problems posed by the interface structure during chemical etching by Hydro-fluoric (HF) acid for creating air gaps in microelectromechnical system (MEMS) devices using PZT(53/47) films and surface micromachining techniques. In order to investigate the influence of interface structure on the HF chemical etching process, Pt/PZT/Pt/Ti/TiO2/polysilicon/Si3N4/PSG/Si (Samples A and C) and Pt/PZT/RuO2/Ru/Si3N4/PSG/Si (Sample B) structures were fabricated. These structures are selected for a microcantilever beam and/or an uncooled IR detectors fabricated with PZT piezoelectric/pyroelectric films based on the surface micromachining technique. Both need etching for the removal of phosphor silicate glass (PSG) to create an air gap. If the devices had a poor interface structure, they would fail during the HF chemical etching process because the poor interface structure would act as a kind of penetration path for etching acid leading to unwanted etching. Therefore, it is very important to investigate the interface structure to fabricate efficient MEMS devices. In this study two different solutions have been suggested to improve the interface structure. The first is post thermal annealing at 900°C for 30 min. after deposition of polycrystalline silicon for sample A. Secondly, a RuO2/Ru hybrid electrode was deposited on Si3N4 directly instead of on the Pt/Ti/TiO2/Polysilicon electrode, which has Pt/PZT/RuO2/Ru/Si3N4/PSG/Si as the device structure. These two solutions suggest that a dense interface structure increases enhances of success of the chemical etching process of MEMS devices fabricated using PZT films and surface micromachining techniques.

  2. Bulk filling of Class II cavities with a dual-cure composite: Effect of curing mode and enamel etching on marginal adaptation

    PubMed Central

    Bortolotto, Tissiana; Roig, Miguel; Krejci, Ivo

    2014-01-01

    Objectives: This study attempted to find a simple adhesive restorative technique for class I and II cavities on posterior teeth. Study Design: The tested materials were a self-etching adhesive (Parabond, Coltène/Whaledent) and a dual-cure composite (Paracore, Coltène/Whaledent) used in bulk to restore the cavities. Class II MO cavities were performed and assigned to 4 groups depending on the orthophosphoric acid (H3PO4) conditioning of enamel and polymerization method used (chemical or dual). Specimens were subjected to quantitative marginal analysis before and after thermo-mechanical loading. Results: Higher percentages of marginal adaptation at the total margin length, both before and after thermo-mechanical loading, were found in groups in which enamel was etched with phosphoric acid, without significant differences between the chemically and dual-cured modes. The restorations performance was similar on enamel and dentin, obtaining low results of adaptation on occlusal enamel in the groups without enamel etching, the lowest scores were on cervical dentin in the group with no ortophosphoric acid and self-cured. Conclusions: A dual-cure composite applied in bulk on acid etched enamel obtained acceptable marginal adaptation results, and may be an alternative technique for the restoration of class II cavities. Key words:Dual-cure composite, bulk technique, class II restoration, selective enamel etching, marginal adaptation. PMID:25674316

  3. Particle reduction and control in EUV etching process

    NASA Astrophysics Data System (ADS)

    Jun, JeaYoung; Ha, TaeJoong; Kim, SangPyo; Yim, DongGyu

    2014-10-01

    As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the ARC (Anti-Reflection Coating) and ABS (Absorber) etch in an EUV (extreme ultraviolet) mask. Therefore we studied etching techniques of EUV absorber film to find out the evasion method of particle generation. Usually, Particles are generated by plasma ignition step in etching process. When we use the standard etching process, ARC and ABS films are etched step by step. To reduce the particle generation, the number of ignition steps need to decrease. In this paper, we present the experimental results of in-situ EUV dry etching process technique for ARC and ABS, which reduces the defect level significantly. Analysis tools used for this study are as follows; TEM (for cross-sectional inspection) , SEM (for in-line monitoring ) and OES (for checking optical emission spectrum)

  4. Excimer Laser Etching

    SciTech Connect

    Boatner, Lynn A; Longmire, Hu Foster; Rouleau, Christopher M; Gray, Allison S

    2008-04-01

    Excimer laser radiation at a wavelength of = 248 nm represents a new etching method for the preparation of metallographic specimens. The method is shown to be particularly effective for enhancing the contrast between different phases in a multiphase metallographic specimen.

  5. Recipes and Techniques for Producing Artist's Materials.

    ERIC Educational Resources Information Center

    School Arts, 1979

    1979-01-01

    Instructions are given for making oil ground, glue gesso, glue water size, oil colors, damar varnish, water colors, encaustic painting, egg tempera painting, etching inks, etching grounds, etching acids, and sugar-lift. (SJL)

  6. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  7. A new back-etch for silicon devices

    SciTech Connect

    Malberti, P.; Ciappa, M.; Scacco, P.

    1995-12-31

    This paper reports on a new application of tetramethylammonium-hydroxide in aqueous solution (TMAHW) as back-etch for silicon integrated circuits. TMAHW has many advantages upon traditional back-etch solutions: it is selective, safe, non-toxic, inexpensive, and fully compatible with materials used in semiconductor device technology. The efficiency of this backside etching technique is demonstrated by a case history concerning aluminum silicon interdiffusion.

  8. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  9. Characterization of deep wet etching of glass

    NASA Astrophysics Data System (ADS)

    Iliescu, Ciprian; Chen, Bangtao; Tay, Francis E. H.; Xu, Guolin; Miao, Jianmin

    2006-01-01

    This paper presents a characterization of wet etching of glass in HF-based solutions with a focus on etching rate, masking layers and quality of the generated surface. The first important factor that affects the deep wet etching process is the glass composition. The presence of oxides such as CaO, MgO or Al IIO 3 that give insoluble products after reaction with HF can generate rough surface and modify the etching rate. A second factor that influences especially the etch rate is the annealing process (560°C / 6 hours in N II environment). For annealed glass samples an increase of the etch rate with 50-60% was achieved. Another important factor is the concentration of the HF solution. For deep wet etching of Pyrex glass in hydrofluoric acid solution, different masking layers such as Cr/Au, PECVD amorphous silicon, LPCVD polysilicon and silicon carbide are analyzed. Detailed studies show that the stress in the masking layer is a critical factor for deep wet etching of glass. A low value of compressive stress is recommended. High value of tensile stress in the masking layer (200-300 MPa) can be an important factor in the generation of the pinholes. Another factor is the surface hydrophilicity. A hydrophobic surface of the masking layer will prevent the etching solution from flowing through the deposition defects (micro/nano channels or cracks) and the generation of pinholes is reduced. The stress gradient in the masking layer can also be an important factor in generation of the notching defects on the edges. Using these considerations a special multilayer masks Cr/Au/Photoresist (AZ7220) and amorphous silicon/silicon carbide/Photoresist were fabricated for deep wet etching of a 500 μm and 1mm-thick respectively Pyrex glass wafers. In both cases the etching was performed through wafer. From our knowledge these are the best results reported in the literature. The quality of the generated surface is another important factor in the fabrication process. We notice that the

  10. A novel colonic anastomosis technique involving fixed polyglycolic acid mesh

    PubMed Central

    Aysan, Erhan; Bektas, Hasan; Ersoz, Feyzullah; Sari, Serkan; Kaygusuz, Arslan

    2010-01-01

    Background: Polyglycolic acid mesh (PAM) reinforcement of colonic anastomoses were evaluated. Methods: Twenty female albino rabbits were divided into two groups. Each rabbit underwent segmental colonic resection with single-layer anastomosis. In one group of rabbits, PAM of length equal to the circumference of the anastomosis was applied. Rabbits were sacrificed on postoperative day 10 and peritoneal adhesions, anastomosis burst pressure, and anastomosis histopathological characteristics were evaluated. Results: The average burst pressure for the control and PAM groups was 149±15.95 mmHgand 224±124.5 mmHg, respectively (p=0.578). All control anastomoses burst, whereas only five (50%) PAM anastomoses burst (p<0.03). There was no anastomotic leakage in the control group, whereas three PAM group anastomoses leaked (p=0.210). The collagen fiber density and amount of neovascularization were lower in the PAM than the control group (p=0.001 and p=0.002, respectively). The average peritoneal adhesion value was 1.6±0.51 in the control group and 2.9±0.31 in the PAM group (p<0.0001). Conclusion: The new fixed PAM-reinforced anastomosis technique resulted in an increased risk of anastomosis leakage and peritoneal adhesion, but also higher in non-burst anastomoses. PMID:21072268

  11. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  12. Fabrication of large periodic arrays of AlGaAs microdisks by laser-interference lithography and selective etching

    NASA Astrophysics Data System (ADS)

    Petter, K.; Kipp, T.; Heyn, Ch.; Heitmann, D.; Schuller, C.

    2002-07-01

    By laser-interference lithography, reactive-ion etching, and selective wet-chemical etching using a citric acid-based solution, we have fabricated large periodic arrays of AlGaAs microdisks with periods of 4 mum and disk diameters between 1.5 and 2 mum. The arrays are characterized by temperature-dependent photoluminescence spectroscopy. Taking into account the below-threshold absorption of the quantum wells inside the disks, we get disk quality factors close to the theoretical maximum value. We demonstrate that our technique allows one also to produce one-dimensionally or two-dimensionally coupled arrays of microdisks.

  13. Ion-induced chlorination of titanium leading to enhanced etching

    SciTech Connect

    O'Brien, W.L.; Rhodin, T.N.; Rathbun, L.C.

    1988-10-15

    The ion-induced chemical etching of titanium with chlorine has been studied. Quartz crystal microbalance studies show that the ion beam etch rate of Ti is enhanced upon addition of molecular chlorine, whereas molecular chlorine does not etch Ti in the absence of ion stimulation. This is very similar to the etching behavior of silicon in the presence of argon stimulation and chlorine gas. The etching of titanium is compared to a generalized version of the ion-assisted chemical etching model first proposed by Winters and Coburn. In this model the ion beam either enhances or induces one of the following chemical etching steps: initial adsorption, product formation, or product removal. The ion beam effect on product formation was determined by x-ray photoemission spectroscopy after sample etching. Ion beam effects on product removal were studied by measuring product distributions using modulated ion beam and time-of-flight techniques. It is found that the energetic ions induce formation of a chemically altered surface containing TiCl/sub x/ compounds. It is the ion-induced formation of this altered surface which leads to enhanced etching. Discussion in terms of the general model provides a comparison of the ion-assisted chemical etching mechanisms of titanium to silicon.

  14. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  15. Rapid Dry Etching Of Photoresists Without Toxic Gases

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R.; Wydeven, Theodore

    1991-01-01

    Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.

  16. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  17. Temporal fossa defects: techniques for injecting hyaluronic acid filler and complications after hyaluronic acid filler injection.

    PubMed

    Juhász, Margit Lai Wun; Marmur, Ellen S

    2015-09-01

    Facial changes with aging include thinning of the epidermis, loss of skin elasticity, atrophy of muscle, and subcutaneous fat and bony changes, all which result in a loss of volume. As temporal bones become more concave, and the temporalis atrophies and the temporal fat pad decreases, volume loss leads to an undesirable, gaunt appearance. By altering the temporal fossa and upper face with hyaluronic acid filler, those whose specialty is injecting filler can achieve a balanced and more youthful facial structure. Many techniques have been described to inject filler into the fossa including a "fanned" pattern of injections, highly diluted filler injection, and the method we describe using a three-injection approach. Complications of filler in the temporal fossa include bruising, tenderness, swelling, Tyndall effect, overcorrection, and chewing discomfort. Although rare, more serious complications include infection, foreign body granuloma, intravascular necrosis, and blindness due to embolization into the ophthalmic artery. Using reversible hyaluronic acid fillers, hyaluronidase can be used to relieve any discomfort felt by the patient. Injectors must be aware of the complications that may occur and provide treatment readily to avoid morbidities associated with filler injection into this sensitive area. PMID:26311237

  18. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  19. Dry-wet digital etching of Ge1-xSnx

    NASA Astrophysics Data System (ADS)

    Shang, Colleen K.; Wang, Vivian; Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Pao, James J.; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Harris, James S.

    2016-02-01

    The development of a precise micromachining process for Ge1-xSnx has the potential to enable both the fabrication and optimization of Ge1-xSnx-based devices in photonics and microelectromechanical systems. We demonstrate a digital etching scheme for Ge0.922Sn0.078 based on a two-stage, highly selective CF4 plasma dry etch and HCl wet etch. Using X-Ray Reflectivity, we show consistent etch control as low as 1.5 nm per cycle, which is defined as one dry etch step followed by one wet etch step. The etch rate increases to 3.2 nm per cycle for a longer dry etch time due to physical sputtering contributions, accompanied by an increase in RMS surface roughness. By operating within a regime with minimal sputtering, we demonstrate that good digital etch depth control and surface quality can be achieved using this technique.

  20. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    enhance the resolution. Other resolution enhancement techniques, such as phase shifting, are also in consideration for EUVL. Phase-shifting will involve partial etching of the multilayer. The trend to use shorter EUV wavelength (e.g., 6.7 nm) for enhancing resolution will use new multilayer and absorber compositions, and will require new etch process development efforts. TaBO/TaBN absorber layers (features down to 40 nm) were etched with vertical profiles, low etch CD bias, and 1.7 nm etch CD uniformity (3σ). In the light shed application, Mo/Si multilayer etching yielded vertical profiles and high etch selectivity.

  1. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  2. Effect of various de-anodizing techniques on the surface stability of non-colored and colored nanoporous AAO films in acidic solution

    NASA Astrophysics Data System (ADS)

    Awad, Ahmed M.; Shehata, Omnia S.; Heakal, Fakiha El-Taib

    2015-12-01

    Anodic aluminum oxide (AAO) is well known as an important nanostructured material, and a useful template in the fabrication of nanostructures. Nanoporous anodic alumina (PAA) with high open porosity was prepared by adopting three de-anodizing regimes following the first anodizing step and preceding the second one. The de-anodizing methods include electrolytic etching (EE) and chemical etching using either phosphoric acid (PE) or sodium hydroxide (HE) solutions. Three of the obtained AAO samples were black colored by electrodeposition of copper nanoparticles in their pores. Electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization techniques were used to characterize the electrochemical performance of the two sets of the prepared samples. In general, the data obtained in aggressive aerated 0.5 M HCl solution demonstrated dissimilar behavior for the three prepared samples despite that the second anodizing step was the same for all of them. The data indicated that the resistance and thickness of the inner barrier part of nano-PAA film, are the main controlling factors determining its stability. On the other hand, coloring the film decreased its stability due to the galvanic effect. The difference in the electrochemical behavior of the three colored samples was discussed based on the difference in both the pore size and thickness of the outer porous part of PAA film as supported by SEM, TEM and cross-sectional micrographs. These results can thus contribute for better engineering applications of nanoporous AAO.

  3. Applications of synchrotron-based spectroscopic techniques in studying nucleic acids and nucleic acid-functionalized nanomaterials

    PubMed Central

    Wu, Peiwen; Yu, Yang; McGhee, Claire E.; Tan, Li Huey

    2014-01-01

    In this review, we summarize recent progresses in the application of synchrotron-based spectroscopic techniques for nucleic acid research that takes advantage of high-flux and high-brilliance electromagnetic radiation from synchrotron sources. The first section of the review focuses on the characterization of the structure and folding processes of nucleic acids using different types of synchrotron-based spectroscopies, such as X-ray absorption spectroscopy, X-ray emission spectroscopy, X-ray photoelectron spectroscopy, synchrotron radiation circular dichroism, X-ray footprinting and small-angle X-ray scattering. In the second section, the characterization of nucleic acid-based nanostructures, nucleic acid-functionalized nanomaterials and nucleic acid-lipid interactions using these spectroscopic techniques is summarized. Insights gained from these studies are described and future directions of this field are also discussed. PMID:25205057

  4. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives

    PubMed Central

    Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2015-01-01

    Objectives This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Materials and Methods Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. Results In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p < 0.05). In BB, AE and SU (pH 2.4 - 2.7), additional etching did not affect the bond strength (p > 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p < 0.05). When adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. Conclusions The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin. PMID:25671215

  5. Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaolong; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2015-11-01

    In this work, we introduce an optimum ICP etching technique that successfully removes the subsurface damage (SSD) layer of fused silica without causing plasma induced surface damage (PISD) or lateral etching of SSD. As one of the commonest PISD initiators, metal contamination from reactor chamber is prevented by employing a simple isolation device. Based on this device, a unique low-density pitting damage is discovered and subsequently eliminated by optimizing the etching parameters. Meanwhile etching anisotropy also improves a lot, thus preventing the lateral etching of SSD. Using this proposed technique, SSD layer of fused silica is successfully removed with a surface roughness of 0.23 nm.

  6. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma

    SciTech Connect

    Hareland, W.A.; Buss, R.J.

    1993-06-01

    Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.

  7. The oral microbiota: general overview, taxonomy, and nucleic acid techniques.

    PubMed

    Siqueira, José F; Rôças, Isabela N

    2010-01-01

    Application of nucleic acid technology to the analysis of the bacterial diversity in the oral cavity in conditions of health and disease has not only confirmed the findings from early culture studies but also significantly expanded the list of oral inhabitants and candidate pathogens associated with the major oral diseases. Over 800 bacterial distinct species-level taxa have been detected in the oral cavity and recent studies using high-throughput technology suggest that the breadth of bacterial diversity can be much larger. This chapter provides an overview of the diversity and taxonomy of oral bacteria. Emphasis is also given on nucleic acid technologies that have been widely used for the study of the oral microbiota. PMID:20717778

  8. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  9. Intercomparison of Nitrous Acid (HONO) Measurement Techniques during SHARP

    NASA Astrophysics Data System (ADS)

    Pinto, J. P.; Meng, Q.; Dibb, J. E.; Lefer, B. L.; Rappenglueck, B.; Ren, X.; Stutz, J.; Zhang, R.

    2010-12-01

    HONO is regarded as a potentially important radical precursor in a number of diverse environments ranging from polar to semi-tropical. As part of the SHARP (Study of Houston Atmospheric Radical Precursors), time series of HONO were obtained by five different measurement techniques. Techniques used were long path differential optical absorption spectroscopy (DOAS), long-path absorption photometry (LoPAP), mist chamber (MC), quantum cascade laser and ionization detection-chemical ionization mass spectrometry. Various combinations of techniques were in operation during the whole period from 15 April through 31 May 2009 with a common measurement period extending from 16 to 28 May. All instruments recorded a similar diurnal pattern of HONO concentrations with higher mean values from the in-situ techniques than either the low- or mid-path DOAS. The largest differences among techniques were found during the afternoon with measurements from the in-situ techniques higher than either the low- or mid-path DOAS. Principal components analysis using measurements of trace species was used to identify possible sources of interference in the chemical measurements. Two major components were identified: one associated with primary, mainly traffic related pollutants and the other with photochemical species. The afternoon differences between DOAS and MC and the U Miami LoPAP were found to be most strongly associated with the photochemical component. The results for comparison between DOAS and MC are in accord with those found previously during August-September 2006. All instruments showed some association between measurement differences and the primary component. Further details and associations with air coming from different areas of the Houston airshed will also be presented.

  10. Study of an Acid-Free Technique for the Preparation of Glycyrrhetinic Acid from Ammonium Glycyrrhizinate in Subcritical Water.

    PubMed

    Lekar, Anna V; Borisenko, Sergey N; Vetrova, Elena V; Filonova, Olga V; Maksimenko, Elena V; Borisenko, Nikolai I; Minkin, Vladimir I

    2015-11-01

    The aim of this work was to study an application of a previously developed expedient acid-free technique for the preparation of glycyrrhetinic acid from ammonium glycyrrhizinate that requires no use of acids and toxic organic solvents. Subcritical water that serves as a reactant and a solvent was used in order to obtain glycyrrhetinic acid in good yields starting from ammonium glycyrrhizinate. It has been shown that variation of only one parameter of the process (temperature) allows alteration to thecomposition of the hydrolysis products. A new method was used for the synthesis of glycyrrhetinic acid (glycyrrhizic acid aglycone) and its monoglycoside. HPLC combined with mass spectrometry and NMR spectroscopy were used to determine the quantitative and qualitative compositions of the obtained products. The method developed for the production of glycyrrhetinic acid in subcritical water is environmentally friendly and faster than conventional hydrolysis methods that use acids and-expensive and toxic organic solvents. The proposed technique has a potential for the future development of inexpensive and environmentally friendly technologies for production of new pharmaceutical plant-based substances. PMID:26749800

  11. Consideration of VT5 etch-based OPC modeling

    NASA Astrophysics Data System (ADS)

    Lim, ChinTeong; Temchenko, Vlad; Kaiser, Dieter; Meusel, Ingo; Schmidt, Sebastian; Schneider, Jens; Niehoff, Martin

    2008-03-01

    Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

  12. A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds

    NASA Astrophysics Data System (ADS)

    Stoltz, A. J.; Benson, J. D.; Jaime-Vasquez, M.; Smith, P. J.; Almeida, L. A.; Jacobs, R.; Markunas, J.; Brogden, K.; Brown, A.; Lennon, C.; Maloney, P.; Supola, N.

    2014-09-01

    HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds.

  13. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    NASA Astrophysics Data System (ADS)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

    2015-11-01

    Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  14. Reactive ion etching of quartz and Pyrex for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  15. Catalytic activity of noble metals for metal-assisted chemical etching of silicon

    NASA Astrophysics Data System (ADS)

    Yae, Shinji; Morii, Yuma; Fukumuro, Naoki; Matsuda, Hitoshi

    2012-06-01

    Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structure: photoillumination during etching, oxidizing agents, and metal particles. In this study, the influence of noble metal particles, silver, gold, platinum, and rhodium, on this etching is investigated under dark conditions: the absence of photogenerated charges in the silicon. The silicon dissolution is localized under the particles, and nanopores are formed whose diameters resemble the size of the metal nanoparticles. The etching rate of the silicon and the catalytic activity of the metals for the cathodic reduction of oxygen in the hydrofluoric acid solution increase in the order of silver, gold, platinum, and rhodium.

  16. Catalytic activity of noble metals for metal-assisted chemical etching of silicon

    PubMed Central

    2012-01-01

    Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structure: photoillumination during etching, oxidizing agents, and metal particles. In this study, the influence of noble metal particles, silver, gold, platinum, and rhodium, on this etching is investigated under dark conditions: the absence of photogenerated charges in the silicon. The silicon dissolution is localized under the particles, and nanopores are formed whose diameters resemble the size of the metal nanoparticles. The etching rate of the silicon and the catalytic activity of the metals for the cathodic reduction of oxygen in the hydrofluoric acid solution increase in the order of silver, gold, platinum, and rhodium. PMID:22738277

  17. Optical properties of quantum energies in GaAs quantum nanodisks produced using a bio-nanotemplate and a neutral beam etching technique

    NASA Astrophysics Data System (ADS)

    Ohori, Daisuke; Fukuyama, Atsuhiko; Thomas, Cedric; Higo, Akio; Samukawa, Seiji; Ikari, Tetsuo

    2016-09-01

    We demonstrated that the lattice-matched GaAs quantum nanodisks (QNDs) embedded in an AlGaAs matrix were fabricated by our original top-down nanoprocess. Lattice-matched GaAs QNDs are very attractive in quantum cryptography because the spin relaxation time of QNDs might be longer than that of strained quantum dots. Quantum levels of QNDs were investigated by the photoluminescence (PL) technique. The minimum diameter and thickness of QNDs were 7 and 8 nm, respectively. PL peaks of QNDs at 1.64 and 1.66 eV were observed to be higher than that of multiple quantum wells (MQWs) observed at 1.57 eV. It is suggested that these peaks are due to the diameter distribution of QNDs. The calculated quantum levels were in good agreement with the present experimental results. The observation of the PL peaks from QNDs demonstrates that the quantum level is strongly confined not only in the perpendicular direction but also in the lateral direction.

  18. A Novel Technique of Supra Superficial Musculoaponeurotic System Hyaluronic Acid Injection for Lower Face Lifting

    PubMed Central

    Sahawatwong, Sinijchaya; Sirithanabadeekul, Punyaphat; Patanajareet, Vasiyapha; Wattanakrai, Penpun

    2016-01-01

    Background: Various methods attempting to correct sagging of the lower face focus mainly on manipulation of the superficial musculoaponeurotic System. Each technique has its own limitation. The authors propose a relatively simple, conservative method utilizing hyaluronic acid injection just above the superficial musculoaponeurotic System. Objective: To address a novel hyaluronic injection technique to lift the lower face. Methods: Details of the injection techniques are described. The Position of the hyaluronic acid injected and the effect of hyaluronic acid on the superficial musculoaponeurotic System were confirmed by ultrasonography in one of the cases. Results: Sonogram images demonstrated the location of the injected hyaluronic acid and pressure effect of hyaluronic acid on the superficial musculoaponeurotic System, confirming the ability to manipulate the superficial musculoaponeurotic System by this injection technique. The lifting result of this Single injection technique was immediately visible and maintained for at least 26 weeks. Conclusion: This is a less invasive, reproducible method that provides a sustained face lifting result. The authors propose the term “supraSMAS lift” for this novel injection technique. PMID:27047633

  19. Formation of nanostructured silicon surfaces by stain etching

    PubMed Central

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  20. Formation of nanostructured silicon surfaces by stain etching.

    PubMed

    Ayat, Maha; Belhousse, Samia; Boarino, Luca; Gabouze, Noureddine; Boukherroub, Rabah; Kechouane, Mohamed

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  1. Chlorine-based dry etching of β-Ga2O3

    NASA Astrophysics Data System (ADS)

    Hogan, Jack E.; Kaun, Stephen W.; Ahmadi, Elaheh; Oshima, Yuichi; Speck, James S.

    2016-06-01

    Reactive ion etching (RIE) and inductively coupled plasma (ICP) etching techniques were used to determine the optimal dry etch conditions for β-Ga2O3. RF power and chamber pressure were examined to study their effects on etch rate and surface roughness for three crystallographic planes, i.e., (100); (010); and (\\bar{2}01) by RIE. BCl3 etch rate calibrations were performed on all β-Ga2O3 planes studied, in comparison to Cl2. RIE yielded moderate etch rates (<20 nm min‑1), and surface roughness showed no clear trend with RF power. Moreover, the effect of bias power, plasma power, and the choice of etchant were studied using ICP. The etches performed by ICP were shown to be superior to RIE in both etch rate and surface roughness, due to the much higher plasma densities and uniformities possible with plasma powers beyond those realized in RIE. The maximum etch rate of 43.0 nm min‑1 was achieved using BCl3 in ICP. SF6/BCl3 mixtures, which yield high GaN etch rates, were also studied. However, in contrast to GaN etching, SF6/BCl3 was found to be far less effective than pure BCl3 in etching β-Ga2O3.

  2. Experimental study on thermal hazard of tributyl phosphate-nitric acid mixtures using micro calorimeter technique.

    PubMed

    Sun, Qi; Jiang, Lin; Gong, Liang; Sun, Jin-Hua

    2016-08-15

    During PUREX spent nuclear fuel reprocessing, mixture of tributyl phosphate (TBP) and hydrocarbon solvent are employed as organic solvent to extract uranium in consideration of radiation contaminated safety and resource recycling, meanwhile nitric acid is utilized to dissolve the spent fuel into small pieces. However, once TBP contacts with nitric acid or nitrates above 130°C, a heavy "red oil" layer would occur accompanied by thermal runaway reactions, even caused several nuclear safety accident. Considering nitric acid volatility and weak exothermic detection, C80micro calorimeter technique was used in this study to investigate thermal decomposition of TBP mixed with nitric acid. Results show that the concentration of nitric acid greatly influences thermal hazard of the system by direct reactions. Even with a low heating rate, if the concentration of nitric acid increases due to evaporation of water or improper operations, thermal runaway in the closed system could start at a low temperature. PMID:27136728

  3. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Yun; Wong, Ching-Ping

    2014-12-01

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag

  4. Individualized Learning Package about Etching.

    ERIC Educational Resources Information Center

    Sauer, Michael J.

    An individualized learning package provides step-by-step instruction in the fundamentals of the etching process. Thirteen specific behavioral objectives are listed. A pretest, consisting of matching 15 etching terms with their definitions, is provided along with an answer key. The remainder of the learning package teaches the 13 steps of the…

  5. Ultrasonic metal etching for metallographic analysis

    NASA Technical Reports Server (NTRS)

    Young, S. G.

    1971-01-01

    Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures. Cavitation bubbles in ultrasonically excited water produce preferential damage /etching/ of metallurgical phases or grain boundaries, depending on hardness of metal specimens.

  6. Fabrication of resonator-quantum well infrared photodetector focal plane array by inductively coupled plasma etching

    NASA Astrophysics Data System (ADS)

    Sun, Jason; Choi, Kwong-Kit

    2016-02-01

    Inductively coupled plasma (ICP) etching has distinct advantages over reactive ion etching in that the etching rates are considerably higher, the uniformity is much better, and the sidewalls of the etched material are highly anisotropic due to the higher plasma density and lower operating pressure. Therefore, ICP etching is a promising process for pattern transfer required during microelectronic and optoelectronic fabrication. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To fabricate R-QWIP focal plane arrays (FPAs), two optimized ICP etching processes are developed. Using these etching techniques, we have fabricated R-QWIP FPAs of several different formats and pixel sizes with the required dimensions and completely removed the substrates of the FPAs. Their QE spectra were tested to be 30 to 40%. The operability and spectral nonuniformity of the FPA is ˜99.5 and 3%, respectively.

  7. Assembly Methods for Etched Foil Regenerators

    NASA Astrophysics Data System (ADS)

    Mitchell, Matthew P.

    2004-06-01

    Etched foil appears to offer substantial advantages over other regenerator materials, especially for annular regenerators. However, assembly of etched foil regenerators has been difficult because etching regenerator patterns in foil is most satisfactorily accomplished using pieces too small for a complete, spiral-wrapped regenerator. Two techniques have been developed to deal with that problem: For spiral-wrapped regenerators, a new technique for joining pieces of foil using tabs has been successfully employed. The joints are no thicker than the parent material. The tabs substantially fill the holes into which they are locked, virtually eliminating any undesired leak path through the regenerator. The holes constitute breaks in the conductive path through the regenerator. A patent is pending. An alternate method is to insert pieces of foil in a cylindrical housing one at a time. An inflatable bladder presses each newly-inserted piece of foil against the previous layer until both edges slip past each other and contact the previously-installed piece. When the bladder is deflated, the natural springiness of the foil causes the cut edges to seek the wall and meet each other in a butt joint. A patent on the method has been issued; a patent on the resulting regenerator is pending.

  8. Atomic layer etching removal of damaged layers in a contact hole for low sheet resistance

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Yeom, Geun Young

    2013-11-15

    A damaged layer remains on silicon substrates after high-aspect-ratio contact (HARC) etching when using a fluorocarbon gas. Atomic layer etching (ALET) is a technique that can be applied to remove the damaged layer of silicon, removing about 1.36 Å per etch cycle. The characteristics of contact damage removal by ALET are investigated and compared with the conventional damage removal technique of low-power CF{sub 4} plasma etching. The low-power CF{sub 4} plasma etching technique not only has inadequate etch depth control, but also introduces secondary damage by implanting impurities about 25 Å into the contact bottom of the silicon surface. However, ALET allows contact damage to be removed effectively without introducing secondary damage to the substrate, and with precision etch depth control at the angstrom scale. When ALET is applied subsequent to low-power CF{sub 4} plasma etching, the fluorine- and carbon-damaged silicon is effectively removed in about 10 cycles. The sheet resistance of HARC etched silicon decreases from 142 to 137 Ω/□ after using low-power CF{sub 4} plasma etching, and subsequent ALET treatment further decreases the sheet resistance to 129 Ω/□, which is close to the reference value of 124 Ω/□.

  9. Fluorimetric determination of total ascorbic acid by a stopped-flow mixing technique.

    PubMed

    Pérez-Ruiz, T; Martínez-Lozano, C; Tomás, V; Fenoll, J; Fenol, J

    2001-08-01

    A simple, rapid and automatic fluorimetric method for the determination of total ascorbic acid is described. The method makes use of the stopped-flow mixing technique in order to achieve the rapid oxidation of ascorbic acid by dissolved oxygen to dehydroascorbic acid, which then reacts with o-phenylenediamine to form a fluorescent quinoxaline. The initial rate and fluorescence signal of this system are directly proportional to the ascorbic acid concentration. The calibration graph was linear over the range 0.1-30 microg ml(-1) (kinetic method) and 0.25-34 microg ml(-1) (equilibrium method). The precision (% RSD) was close to 0.5%. The method has been used for the determination of ascorbic acid in pharmaceutical formulations, fruit juices, soft drinks and blood serum. PMID:11534621

  10. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    SciTech Connect

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  11. Submicron patterned metal hole etching

    DOEpatents

    McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

    2000-01-01

    A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

  12. Improvement in etching rate for epilayer lift-off with surfactant

    NASA Astrophysics Data System (ADS)

    Wu, Fan-Lei; Horng, Ray-Hua; Lu, Jian-Heng; Chen, Chun-Li; Kao, Yu-Cheng

    2013-03-01

    In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm / min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

  13. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  14. Characterization and Control of Etch Processes Using Multiple Metrologies

    NASA Astrophysics Data System (ADS)

    Bushman, Scott; Celii, Francis; Martin, Scott; Tristan, Luis

    2005-09-01

    The integration of embedded ferroelectric random access memory (FRAM) into a standard CMOS flow requires significant control and characterization of the etch process. Current qualification and control of the etch process for the TiAlN hardmask and Ir/PZT/Ir capacitor film stack relies on several metrologies to evaluate performance (etch rate, critical dimension, sidewall angle, etc). Profilometry is currently used for monitoring hardmask etch rate, but is fraught with difficulties such as low throughput and low reproducibility. Here we compare options for determining hardmask etch rate, including Atomic Force Microscopy (AFM), profilometry, and scatterometry. Wafers with a range of film stacks were generated to test each measurement technique's robustness in etch rate determination. A robust, precise, short cycle time, fully automated process monitor of etch rate is required to make qualification of the etch process manufacturable. Scatterometry is a non-destructive optical metrology based on the analysis of light scattered from a periodic sample. It is a faster technique than either profilometry or AFM because of the optical nature of the measurement, and provides measurements of patterned grating structures. However, a detailed film model is required to estimate parameters of interest. The scatterometry model for this investigation includes four adjustable parameters: TiAlN material index of refraction, thickness, linewidth and sidewall angle. The results show good agreement between the scatterometry measurements and the AFM across the range of step-heights available on the wafers. In addition, the practical aspects of the method, such as the modeling time and estimation of material parameters required to generate the signature library as well as measurement speed are presented.

  15. Photosensitive etch protection coating for silicon wet-etch applications

    NASA Astrophysics Data System (ADS)

    Dalvi-Malhotra, J.; Zhong, X. F.; Planje, C.

    2008-02-01

    A spin-on polymeric material has been developed to replace the silicon nitride mask used in the MEMS industry for silicon wet-etch processing. Built-in photosensitivity eliminates the need for additional photoresists in the system. The process consists of applying an organosilane-based primer layer onto a silicon wafer, followed by spin coating the photosensitive layer. After a soft bake, the coating is imaged by exposing it to ultraviolet light. After a post-exposure bake, the coating is developed by a solvent. After a final bake, the prepared wafer is then etched in a hot concentrated alkaline solution to complete the pattern transfer. The polymer-coated area remains protected with insignificant and controllable undercut after extended hours of wet etching. Etch protection performance was characterized as a ratio of undercut (u) to etch depth (h). The polymeric mask allows silicon substrates to be etched anisotropically in the same way as silicon nitride masks although more undercut occurs when KOH or NaOH are used as etchants. With use of tetramethylammonium hydroxide (TMAH) as an etchant, a consistent 1-2% undercut ratio (u/h×100%) was obtained. The effects of various parameters such as use of different etchants and the effects of etchant concentration and delayed processing on undercut ratio are investigated.

  16. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    PubMed

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  17. Etching properties and electrical characterization of surfaces of silicon-on-insulator substrates in presence of halogens

    SciTech Connect

    Abbadie, A.; Hamaide, G.; Chaupin, M.; Brunier, F.; Mariolle, D.; Martinez, E.; Maehliss, J.

    2012-03-15

    We have studied the etching properties of silicon-on-insulator (SOI) substrates in recently developed chromium-free solutions containing halogens. We have shown that the presence of halogen compounds X (I{sup -}, Br{sup -}...) in HF/HNO{sub 3}/CH{sub 3}COOH solutions is required for a selective and preferential etching on SOI. The etching rate of such solutions increases with the dissolved halogen concentrations. The chemical reactivity of Si-X (X = Br{sup -}, I{sup -}..) bonds has been analyzed by X-ray Photoelectron Spectroscopy (XPS), Pseudo-MOS (flatband potential) and Kelvin Force Microscopy (KFM) measurements. A negative shift of flatband potential values is explained by an increasing concentration of halogen compounds in the solution and a substitution of Si-H (F) bonds by Si-X bonds during the reaction. Though Si-X bonds, and more particularly Si-I bonds, have been confirmed only at trace levels using XPS, we believe that the formation of Si-X bonds is supported by a mechanism of surface dipoles. Unexpectedly, no significant change in work function could be detected using KFM measurements. Some suggestions, based on KFM technique improvements, are made to explain such results. Finally, though the interaction mechanism between silicon, fluoride, iodide, and nitric acid is not clearly elucidated by our experimental results, the formation of Si-halogen bonds is crucial for etching and defect decoration capability.

  18. Synthesis of non-aggregated nicotinic acid coated magnetite nanorods via hydrothermal technique

    NASA Astrophysics Data System (ADS)

    Attallah, Olivia A.; Girgis, E.; Abdel-Mottaleb, Mohamed M. S. A.

    2016-02-01

    Non-aggregated magnetite nanorods with average diameters of 20-30 nm and lengths of up to 350 nm were synthesized via in situ, template free hydrothermal technique. These nanorods capped with different concentrations (1, 1.5, 2 and 2.5 g) of nicotinic acid (vitamin B3); possessed good magnetic properties and easy dispersion in aqueous solutions. Our new synthesis technique maintained the uniform shape of the nanorods even with increasing the coating material concentration. The effect of nicotinic acid on the shape, particle size, chemical structure and magnetic properties of the prepared nanorods was evaluated using different characterization methods. The length of nanorods increased from 270 nm to 350 nm in nicotinic acid coated nanorods. Goethite and magnetite phases with different ratios were the dominant phases in the coated samples while a pure magnetite phase was observed in the uncoated one. Nicotinic acid coated magnetic nanorods showed a significant decrease in saturation magnetization than uncoated samples (55 emu/g) reaching 4 emu/g in 2.5 g nicotinic acid coated sample. The novel synthesis technique proved its potentiality to prepare coated metal oxides with one dimensional nanostructure which can function effectively in different biological applications.

  19. Bond strength with various etching times on young permanent teeth

    SciTech Connect

    Wang, W.N.; Lu, T.C. )

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  20. TECHNIQUES AND METHODS FOR THE DETERMINATION OF HALOACETIC ACIDS IN POTABLE WATER

    EPA Science Inventory

    Haloethanoic (haloacetic) acids (HAAs) are formed as disinfection byproducts (DBPs) during the chlorination of natural water to make it fit for consumption. Sundry analytical techniques have been applied in order to determine the concentrations of the HAAs in potable water suppli...

  1. Simultaneous determination of iron (II) and ascorbic acid in pharmaceuticas based on flow sandwich technique.

    PubMed

    Vakh, Christina; Freze, Elena; Pochivalov, Alexsey; Evdokimova, Ekaterina; Kamencev, Mihail; Moskvin, Leonid; Bulatov, Andrey

    2015-01-01

    The simple and easy performed flow system based on sandwich technique has been developed for the simultaneous separate determination of iron (II) and ascorbic acid in pharmaceuticals. The implementation of sandwich technique assumed the injection of sample solution between two selective reagents and allowed the carrying out in reaction coil two chemical reactions simultaneously: iron (II) with 1,10-phenanthroline and ascorbic acid with sodium 2,6-dichlorophenolindophenol. For achieving of excellent repeatability and considerable reagent saving the various parameters such as flow rate, sample and reagent volumes, reaction coil length were also optimized. The limits of detection (LODs) obtained by using the developed flow sandwich-type approach were 0.2 mg L(-1) for iron (II) and 0.7 mg L(-1) for ascorbic acid. The suggested approach was validated according to the following parameters: linearity and sensitivity, precision, recoveries and accuracy. The sampling frequency was 41 h(-1). PMID:25862995

  2. Decontamination of metals using chemical etching

    DOEpatents

    Lerch, Ronald E.; Partridge, Jerry A.

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  3. Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

    PubMed

    Rezayi, Toktam; Entezari, Mohammad H

    2016-02-01

    Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique. PMID:26513735

  4. Manganese-tuned chemical etching of a platinum-copper nanocatalyst with platinum-rich surfaces

    NASA Astrophysics Data System (ADS)

    Huang, Y. Y.; Zhao, T. S.; Zhao, G.; Yan, X. H.; Xu, K.

    2016-02-01

    This work presents a modified chemical etching strategy to fabricate binary metal nanocatalysts with large active areas. The strategy employs PtCu alloy particles with Pt-rich outer layers as the precursor and manganese species to manipulate the acid leaching processes. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy techniques are used to analyze the catalyst structures and the tuning mechanism of manganese species during etching. It is found that the introduction of manganese species allows more Pt active sites to be formed onto the catalyst surface after etching, possibly due to reduction in the number of Pt atoms enclosed inside particles. The electrochemically active surface area of the synthetic MnA-PtCu/C catalyst increases by 90% relative to commercial Pt/C catalyst. As a result of the increase in active areas and the additional promotion effects by Cu, the MnA-PtCu/C catalyst reveals a methanol oxidation activity 1.7 and 4.0 times higher than that of the synthetic PtCu/C and commercial Pt/C catalysts, respectively.

  5. Potential of spectroscopic techniques and chemometric analysis for rapid measurement of docosahexaenoic acid and eicosapentaenoic acid in algal oil.

    PubMed

    Wu, Di; He, Yong

    2014-09-01

    Developing rapid methods for measuring long-chain ω-3 (n-3) poly-unsaturated fatty acid (LCPUFA) contents has been a crucial request from the algal oil industry. In this study, four spectroscopy techniques, namely visible and short-wave near infra-red (Vis-SNIR), long-wave near infra-red (LNIR), mid-infra-red (MIR) and nuclear magnetic resonance (NMR) spectroscopy, were exploited for determining the docosahexaenoic acid (DHA) and eicosapentaenoic acid (EPA) contents in algal oil. The best prediction for both DHA and EPA were achieved by NMR spectroscopy, in which the determination coefficients of cross-validation (rCV(2)) values were 0.963 and 0.967 for two LCPUFAs. The performances of Vis-SNIR and LNIR spectroscopy were also accepted. The variable selection was proved as an efficient and necessary step for the spectral analysis in this study. The results were promising and implied that spectroscopy techniques have a great potential for assessment of DHA and EPA in algal oil. PMID:24731319

  6. Laser etching of polymer masked leadframes

    NASA Astrophysics Data System (ADS)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  7. High aspect ratio silicon etch: A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma

    2010-09-01

    High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

  8. Etching and Growth of GaAs

    NASA Technical Reports Server (NTRS)

    Seabaugh, A. C.; Mattauch, R., J.

    1983-01-01

    In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

  9. Distributed etched diffraction grating demultiplexer

    NASA Astrophysics Data System (ADS)

    Jafari, Amir

    This doctoral thesis studies the concept of a distributed etched diffraction grating (DEDG) and presents a methodology to engineer the spectral response of the device. The design which incorporates a distributed Bragg reflector (DBR) at the facets of a conventional etched diffraction grating demultiplexer promises for a superior performance in multiple aspects. Where in a conventional etched diffraction grating, smooth vertical deep etched walls are required in order to realize a low insertion loss device; in the DEDG such requirement is significantly mitigated. Deep etched walls are replaced with shallowly etched diffraction grating facets followed by a DBR structure and as a result devices with significantly lower insertion loss are achievable. The feasibility of the application of DEDG as a wavelength demultiplexer was demonstrated through fabrication and characterization of a prototype device. The proof of concept device was fabricated using the state of the art deep UV optical lithography and reactive ion etching in a nano-photonic silicon-on-insulator (SOI) material platform. The fabricated device was then characterized in the lab. Furthermore, incorporation of the DBR structure at the facets of the conventional etched diffraction grating decouples the reflection and diffraction functionalities, rendering the DEDG suitable for spectral response engineering. According to the application, the output spectral response of the device can be tailored through careful design and optimization of the incorporated DBR. In this thesis, through numerical simulations we have shown that functionalities such as polarization independent performance and at top insertion loss envelop are viable. A methodology to engineer the spectral response of the DEDG is discussed in details.

  10. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  11. Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy

    NASA Technical Reports Server (NTRS)

    Cao, X. Z.; Witt, A. F.

    1991-01-01

    An optical method is described for identifying dislocation etch pits in n-type GaAS, using near-IR brightfield transmission microscopy. Dislocations are revealed in a nondestructive manner through contrasts that are likely due to impurity decoration of the dislocation lines. By subjecting the same wafers to a photoetching technique, it was established that each etch pit on the surface is associated with a dislocation and that the termination of each (decorated) dislocation is an etch pit.

  12. Method of etching zirconium diboride

    SciTech Connect

    Heath, L.S.; Kwiatkowski, B.

    1988-03-31

    The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.

  13. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

    PubMed Central

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

  14. Matrix acidizing design and quality-control techniques prove successful in Main Pass area sandstone

    SciTech Connect

    Brannon, D.H.; Netters, C.K.; Grimmer, P.J.

    1987-08-01

    Successful acidizing techniques have been developed and implemented in the Main Pass area, offshore Louisiana. Since mid-1984, 37 oil wells have been acidized, resulting in a success rate of 95% and a total increase in production of almost 12,700 BOPD (2019 m/sup 3//d oil). One of the primary reasons these treatments were so successful was the continuous injection of a finely ground oil-soluble resin diverting agent throughout all acid stages, which decreased acid injection into the more permeable zones and helped distribute the treating fluids more uniformly. Other factors that may not be the industry norm that influenced the effectiveness of these treatments included (1) reduced-strength HCl/HF and preflush acids, (2) xylene solvents pumped ahead of injected acid for possible paraffin and/or asphaltene removal, (3) xylene pumped after the overflush stage as a diverter breaker, (4) filtration of all fluids, (5) low-rate, high-pressure pump for continuous injection of diverter downstream of filters, (6) use of ''pickled'' coiled tubing, (7) coil/production tubing annulus pressure recorder, (8) testing production tubing before pumping, (9) use of boats exclusively, rather than offloaded skids, from which to mix and pump, (10) on-site acid mixing with titration checks of concentration before pumping, and (11) postjob laboratory analysis of concentrations and solids content of selected spot samples.

  15. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    PubMed

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-01

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si. PMID:26473800

  16. Serially etched shark enameloid observed by incident light microscopy.

    PubMed

    Risnes, S; Fosse, G

    1979-01-01

    Longitudinal and transverse tooth sections of Isurus oxyrinchus were serially etched in 2.6% nitric acid. The changing optical properties of the etched surfaces were observed during the serial etchings, and the descent of the enameloid surfaces was measured. Shark enameloid seems to be less effectively etched by acid than human enamel; this difference may be due to differences in solubility between fluorapatite and hydroxyapatite. Most of the information regarding the structure of the enameloid was gained during the first five of ten etchings. The reflection of light from the surface was influenced by the orientation of the crystallites, longitudinally sectioned crystallites reflecting the light better than transversely sectioned crystallites. The dentinal extensions were continuous with and of the same structure as the underlying dentine. The radial fibers originated from the dentinal extensions, and they both contained organic material and were accompanied by crystallites. When the specimens were imbibed with water the distinctness of the dentinal extensions and radial fibers was improved. PMID:525241

  17. Etching of photoresist with an atmospheric pressure plasma jet

    NASA Astrophysics Data System (ADS)

    West, Andrew; van der Schans, Marc; Xu, Cigang; Gans, Timo; Cooke, Mike; Wagenaars, Erik

    2014-10-01

    Low-pressure oxygen plasmas are commonly used in semiconductor industry for removing photoresist from the surface of processed wafers; a process known as plasma ashing or plasma stripping. The possible use of atmospheric-pressure plasmas instead of low-pressure ones for plasma ashing is attractive from the point of view of reduction in equipment costs and processing time. We present investigations of photoresist etching with an atmospheric-pressure plasma jet (APPJ) in helium gas with oxygen admixtures driven by radio-frequency power. In these experiments, the neutral, radical rich effluent of the APPJ is used for etching, avoiding direct contact between the active plasma and the sensitive wafer, while maintaining a high etch rate. Photoresist etch rates and etch quality are measured for a range of plasma operating parameters such as power input, driving frequency, flow rate and wafer temperature. Etch rates of up to 10 micron/min were achieved with modest input power (45 W) and gas flow rate (10 slm). Fourier Transform Infrared (FTIR) spectroscopy showed that the quality of the photoresist removal was comparable to traditional plasma ashing techniques. This work was supported by the UK Engineering and Physical Sciences Research Council Grant EP/K018388/1.

  18. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  19. Post-column labeling techniques in amino acid analysis by liquid chromatography.

    PubMed

    Rigas, Pantelis G

    2013-10-01

    Amino acid analysis (AAA) has always presented an analytical challenge in terms of sample preparation, separation, and detection. Because of the vast number of amino acids, various separation methods have been applied taking into consideration the large differences in their chemical structures, which span from nonpolar to highly polar side chains. Numerous separation methods have been developed in the past 60 years, and impressive achievements have been made in the fields of separation, derivatization, and detection of amino acids (AAs). Among the separation methods, liquid chromatography (LC) prevailed in the AAA field using either pre-column or post-column labeling techniques in order to improve either separation of AAs or selectivity and sensitivity of AAA. Of the two approaches, the post-column technique is a more rugged and reproducible method and provides excellent AAs separation relatively free from interferences. This review considers current separations combined with post-column labeling techniques for AAA, comparison with the pre-column methods, and the strategies used to develop effective post-column methodology. The focus of the article is on LC methods coupled with post-column labeling techniques and studying the reactions to achieve optimum post-column derivatization (PCD) conditions in order to increase sensitivity and selectivity using various types of detectors (UV-Vis, fluorescence, electrochemical etc.) and illustrating the versatility of the PCD methods for practical analysis. PMID:24013667

  20. Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops.

    PubMed

    English, Timothy S; Provine, J; Marshall, Ann F; Koh, Ai Leen; Kenny, Thomas W

    2016-07-01

    Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication. PMID:27160487

  1. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-05-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1-x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1-x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1-x Cd x Te etch rate. It is also observed that the exposed Hg1-x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1-x Cd x Te etch rate. Further, the exposed Hg1-x Cd x Te area is shown to affect the etch rate of the Hg1-x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1-x Cd x Te are listed, herein.

  2. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  3. State of the art etch-and-rinse adhesives

    PubMed Central

    Pashley, David H; Tay, Franklin R; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2013-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti-microbial compounds such as benzalkonium chloride that also inhibits matrix metalloproteinases (MMPs) in dentin. Primers are usually water and HEMA-rich solutions that ensure complete expansion of the collagen fibril meshwork and wet the collagen with hydrophilic monomers. However, water alone can re-expand dried dentin and can also serve as a vehicle for protease inhibitors or protein cross-linking agents that may increase the durability of resin-dentin bonds. In the future, ethanol or other water-free solvents may serve as dehydrating primers that may also contain antibacterial quaternary ammonium methacrylates to inhibit dentin MMPs and increase the durability of resin-dentin bonds. The complete evaporation of solvents is nearly impossible. Manufacturers may need to optimize solvent concentrations. Solvent-free adhesives can seal resin-dentin interfaces with hydrophobic resins that may also contain fluoride and antimicrobial compounds. Etch-and-rinse adhesives produce higher resin-dentin bonds that are more durable than most 1 and 2-step adhesives. Incorporation of protease inhibitors in etchants and/or cross-linking agents in primers may increase the durability of resin-dentin bonds. The therapeutic potential of etch-and-rinse adhesives has yet to be fully exploited. PMID:21112620

  4. Comparison of acid leaching and fusion techniques to determine uranium in soil samples by alpha spectrometry.

    PubMed

    Dirican, Abdullah; Şahin, Mihriban

    2016-03-01

    Dissolution of radionuclides of interest is an indispensable first step in the alpha spectrometric analysis of soil samples. In this study a uranium recovery method for the analysis of uranium isotopes in soil samples is presented. Two different soil sample dissolution techniques were used: digestion in open beaker and fusion. The results of these techniques were compared. Two proficiency test samples and one reference material prepared by the IAEA were analyzed. Better results were obtained by fusion dissolution technique but impurities were higher than with acid leaching. Results of two techniques were more or less similar within the uncertainty limits. The detection limit (a(#)) was evaluated as part of the quality control. PMID:26651172

  5. Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching

    NASA Astrophysics Data System (ADS)

    Pandey, Akhilesh; Yadav, Brajesh S.; Rao, D. V. Sridhara; Kaur, Davinder; Kapoor, Ashok Kumar

    2016-06-01

    Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried out in molten KOH, and inductively coupled plasma (ICP) was used for dry etching. We show that ICP using dry etching and wet chemical etching using KOH solution under optimal conditions give values of dislocation density comparable to the one obtained from the high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy investigations. Investigated threading dislocation density is in the order of ~109/cm2 using different techniques.

  6. Improvement of Dry Etching Resistance of Cyclized Polybutadiene Negative Resist by Vacuum Baking

    NASA Astrophysics Data System (ADS)

    Shimizu, Toshio; Cornu, Vanessa

    1992-12-01

    The dry etching resistance of cyclized polybutadiene negative resist, baked both in air and in vacuum, was investigated. After postbaking in air at above 160°C, the resist etching rate sharply rises. It was clarified by differential scanning calorimetry (DSC), and Fourier transform infrared spectroscopy (FT-IR, RAS method) and X-ray photoelectron spectroscopy (XPS) that the resist oxidation decreases dry etching resistance. On the other hand, the highest resistance was obtained by baking the resist in vacuum at 200°C. The postbaking technique was confirmed as a method for increasing-dry etching resistance.

  7. Wet Chemical Etching Survey of III-Nitrides

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hays, D.C.; MacKenzie, J.D.; Pearton, S.J.; Ren, F.; Shul, R.J.; Vartuli, C.B.; Zolper, J.C.

    1999-02-04

    Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75 C. Only KOH-based solutions were found to etch AlN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75 C, or HCl/H{sub 2}O at 25 C.

  8. Dry etch development of W/WSi short Gate MESFETs

    SciTech Connect

    Shul, R.J.; Sherwin, M.E.; Baca, A.G.; Zolper, J.C.; Rieger, D.J.

    1996-01-01

    The use of refractory metal thin films in the fabrication of high-speed, high-density GaAs field effect transistors (FETs) are prominent with applications as interconnects, via plugs, and ohmic and Schottky contacts. Tungsten and tungsten silicide can be used in a self-aligned gate process as the ion implantation mask during the formation of source and drain regions for metal-semiconductor FETs (MESFETs). The gate etch must be highly anisotropic to accurately define the implant region. Reactive ion etch (RIE) techniques have been used to etch W and WSi films in fluorine-based discharges. The etch mechanism tends to be very chemical and often results in severe undercutting of the feature due to the lateral attack of the refractory metal. The undercut is often so severe that critical dimensions are not maintained and gate profiles do not properly align to the implant region resulting in poor device characteristics. As device design rules shrink, the etch requirements and patterning techniques become even more critical.

  9. Immunochemical Assays and Nucleic-Acid Detection Techniques for Clinical Diagnosis of Prostate Cancer

    PubMed Central

    Kanyong, Prosper; Rawlinson, Sean; Davis, James

    2016-01-01

    Prostate cancer (PCa) is a significant cause of morbidity and mortality and the most common cancer in men in Europe, North America, and some parts of Africa. The established methods for detecting PCa are normally based on tests using Prostate Specific Antigen (PSA) in blood, Prostate cancer antigen 3 (PCA3) in urine and tissue Alpha-methylacyl-CoA racemase (AMACR) as tumour markers in patient samples. Prior to the introduction of PSA in clinics, prostatic acid phosphatase (PAP) was the most widely used biomarker. An early diagnosis of PCa through the detection of these biomarkers requires the availability of simple, reliable, cost-effective and robust techniques. Immunoassays and nucleic acid detection techniques have experienced unprecedented growth in recent years and seem to be the most promising analytical tools. This growth has been driven in part by the surge in demand for near-patient-testing systems in clinical diagnosis. This article reviews immunochemical assays, and nucleic-acid detection techniques that have been used to clinically diagnose PCa. PMID:26958088

  10. Relevance of nucleic acid amplification techniques for diagnosis of respiratory tract infections in the clinical laboratory.

    PubMed Central

    Ieven, M; Goossens, H

    1997-01-01

    Clinical laboratories are increasingly receiving requests to perform nucleic acid amplification tests for the detection of a wide variety of infectious agents. In this paper, the efficiency of nucleic acid amplification techniques for the diagnosis of respiratory tract infections is reviewed. In general, these techniques should be applied only for the detection of microorganisms for which available diagnostic techniques are markedly insensitive or nonexistent or when turnaround times for existing tests (e.g., viral culture) are much longer than those expected with amplification. This is the case for rhinoviruses, coronaviruses, and hantaviruses causing a pulmonary syndrome, Bordetella pertussis, Chlamydia pneumoniae, Mycoplasma pneumoniae, and Coxiella burnetii. For Legionella spp. and fungi, contamination originating from the environment is a limiting factor in interpretation of results, as is the difficulty in differentiating colonization and infection. Detection of these agents in urine or blood by amplification techniques remains to be evaluated. In the clinical setting, there is no need for molecular diagnostic tests for the diagnosis of Pneumocystis carinii. At present, amplification methods for Mycobacterium tuberculosis cannot replace the classical diagnostic techniques, due to their lack of sensitivity and the absence of specific internal controls for the detection of inhibitors of the reaction. Also, the results of interlaboratory comparisons are unsatisfactory. Furthermore, isolates are needed for susceptibility studies. Additional work remains to be done on sample preparation methods, comparison between different amplification methods, and analysis of results. The techniques can be useful for the rapid identification of M. tuberculosis in particular circumstances, as well as the rapid detection of most rifampin-resistant isolates. The introduction of diagnostic amplification techniques into a clinical laboratory implies a level of proficiency for

  11. AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

    NASA Astrophysics Data System (ADS)

    Shimizu, Tomohiro; Yamaguchi, Takuya; Inoue, Fumihiro; Inada, Mitsuru; Shingubara, Shoso

    2012-11-01

    The morphological changes of a nanostructured Si surface prepared by metal assisted etching were investigated. We used a mixture of silver nitrate (AgNO3) and hydrofluoric acid (HF) as an electroless plating bath of Ag, as well as an etching solution of Si. With a change in silver ion concentration in the etching solution, three types of etched Si nanostructures were observed: “nanowire”, “porous wall”, and “polished”. We developed a phase diagram of the morphology of the etched Si surface. With increasing concentration of AgNO3 in the etching solution, the surface morphology of etched Si changes from nanowire to porous wall, and finally, polished for regardless of Si resistivity.

  12. Adiabatic tapered optical fiber fabrication in two step etching

    NASA Astrophysics Data System (ADS)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  13. Nanostructured porous silicon by laser assisted electrochemical etching

    NASA Astrophysics Data System (ADS)

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  14. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  15. Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

    SciTech Connect

    Kang, Seung Hyun; Kim, Jong Kyu; Lee, Sung Ho; Kim, Jin Woo; Yeom, Geun Young

    2015-03-15

    To reduce the cross-talk between nanoscale devices, low-k materials such as methyl silsesquioxane (MSQ), which is damaged easily during plasma etching, are introduced as an intermetallic dielectric material in addition to the use of copper as the conducting material for the reduction of parasitic resistance and capacitance. In this study, beam techniques such as neutral/ion beams were used in the etching of MSQ and the effect of these beam techniques on the reduction of the degradation of the MSQ were investigated. When MSQ was etched using the same CF{sub 4} etch gas at the similar etch rate as that used for conventional MSQ etching using inductively coupled plasmas (ICPs), the neutral/ion beam etching showed lower F contents and lower penetration depth of F, indicating decreased degradation by fluorination of MSQ during etching using the beam techniques. Especially, the neutral beam etching technique showed the lowest F contamination and the lower penetration depth of F among the etch methods. When the dielectric constant was measured after the etching of the same depth, the MSQ etched with the neutral beam showed the lowest change of the dielectric constant, while that etched using the ICP showed the highest change of dielectric constant. The lower degradation, that is, the lower chemical modification of MSQ material with the beam technique is believed to be related to the decreased concentration of radical species in the processing chamber reacting with the MSQ surface, while the lowest degradation using the neutral beam is believed to be due to the lower reaction rate of the reactive neutral compared to reactive ions.

  16. Etching conditions for resin-modified glass ionomer cement for orthodontic brackets.

    PubMed

    Valente, Rudolfo M; De Rijk, Waldemar G; Drummond, James L; Evans, Carla A

    2002-05-01

    This study reports the tensile bond strength of orthodontic eyelets (RMO, Inc, Denver, Colo) bonded to human extracted teeth with a resin-modified glass ionomer cement (RMGIC) (Fuji Ortho LC, GC America, Alsip, Ill) and various acid etchants (Etch-37 and All-Etch, Bisco, Schaumburg, Ill; Ultra Etch, 3M Unitek, St Paul, Minn) for enamel preparation before bonding. The enamel etch conditions were as follows: 37% phosphoric acid with silica; 37% phosphoric acid, silica-free; 10% phosphoric acid, silica-free; 10% polyacrylic acid; and unetched enamel. Bond strength was measured by pulling in tension on the eyelet with a 0.018-in steel wire perpendicular to the enamel surface with a testing machine (Instron model 1125, Canton, Mass) at a speed of 2 mm/min. A light-cured resin cement (Transbond XT, 3M Unitek, Monrovia, Calif) applied to enamel etched with 37% phosphoric acid containing silica served as a control. Each group included 30 specimens. The Weibull distribution (m) was used for statistical analysis with a 90% CI. The different etchants used with RMGIC did not affect tensile bond strength. The resin cement group had the highest tensile strength. Significantly lower bond strengths were observed when glass ionomer cement was used to bond orthodontic attachments to nonetched teeth. However, unlike resin cement, RMGIC can bond effectively to etched teeth in a moist environment without an additional bonding agent. PMID:12045770

  17. Examination of the laser-induced variations in the chemical etch rate of a photosensitive glass ceramic

    NASA Astrophysics Data System (ADS)

    Voges, Melanie; Beversdorff, Manfred; Willert, Chris; Krain, Hartmut

    2007-10-01

    Previous studies in our laboratory have reported that the chemical etch rate of a commercial photosensitive glass ceramic (FoturanTM, Schott Corp., Germany) in dilute hydrofluoric acid is strongly dependent on the incident laser irradiance during patterning at λ=266 nm and λ=355 nm. To help elucidate the underlying chemical and physical processes associated with the laser-induced variations in the chemical etch rate, several complimentary techniques were employed at various stages of the UV laser exposure and thermal treatment. X-ray diffraction (XRD) was used to identify the crystalline phases that are formed in Foturan following laser irradiation and annealing, and monitor the crystalline content as a function of laser irradiance at λ=266 nm and λ=355 nm. The XRD results indicate the nucleation of lithium metasilicate (Li2SiO3) crystals as the exclusive phase following laser irradiation and thermal treatment at temperatures not exceeding 605 °C. The XRD studies also show that the Li2SiO3 density increases with increasing laser irradiance and saturates at high laser irradiance. For our thermal treatment protocol, the average Li2SiO3 crystal diameters are 117.0±10.0 nm and 91.2±5.8 nm for λ=266 nm and λ=355 nm, respectively. Transmission electron microscopy (TEM) was utilized to examine the microscopic structural features of the lithium metasilicate crystals. The TEM results reveal that the growth of lithium metasilicate crystals proceeds dendritically, and produces Li2SiO3 crystals that are ˜700 1000 nm in length for saturation exposures. Optical transmission spectroscopy (OTS) was used to study the growth of metallic silver clusters that act as nucleation sites for the Li2SiO3 crystalline phase. The OTS results show that the (Ag0)x cluster concentration has a dependence on incident laser irradiance that is similar to the etch rate ratios and Li2SiO3 concentration. A comparison between the XRD and optical transmission results and our prior etch rate

  18. Spectroscopic investigation on cocrystal formation between adenine and fumaric acid based on infrared and Raman techniques

    NASA Astrophysics Data System (ADS)

    Du, Yong; Fang, Hong Xia; Zhang, Qi; Zhang, Hui Li; Hong, Zhi

    2016-01-01

    As an important component of double-stranded DNA, adenine has powerful hydrogen-bond capability, due to rich hydrogen bond donors and acceptors existing within its molecular structure. Therefore, it is easy to form cocrystal between adenine and other small molecules with intermolecular hydrogen-bond effect. In this work, cocrystal of adenine and fumaric acid has been characterized as model system by FT-IR and FT-Raman spectral techniques. The experimental results show that the cocrystal formed between adenine and fumaric acid possesses unique spectroscopical characteristic compared with that of starting materials. Density functional theory (DFT) calculation has been performed to optimize the molecular structures and simulate vibrational modes of adenine, fumaric acid and the corresponding cocrystal. Combining the theoretical and experimental vibrational results, the characteristic bands corresponding to bending and stretching vibrations of amino and carbonyl groups within cocrystal are shifted into lower frequencies upon cocrystal formation, and the corresponding bond lengths show some increase due to the effect of intermolecular hydrogen bonding. Different vibrational modes shown in the experimental spectra have been assigned based on the simulation DFT results. The study could provide experimental and theoretical benchmarks to characterize cocrystal formed between active ingredients and cocrystal formers and also the intermolecular hydrogen-bond effect within cocrystal formation process by vibrational spectroscopic techniques.

  19. ION BEAM ETCHING EFFECTS IN BIOLOGICAL MICROANALYSIS

    EPA Science Inventory

    Oxygen ion beam sputter etching used in SIMS has been shown to produce morphologic effects which have similarities and differences in comparison to rf plasma etching of biological specimens. Sputter yield variations resulting from structural microheterogeneity are illustrated (e....

  20. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  1. Etching of fused silica and glass with excimer laser at 351 nm

    NASA Astrophysics Data System (ADS)

    Zimmer, K.; Braun, A.; Böhme, R.

    2003-03-01

    The etching of solid surfaces at the interface to liquids is a new promising method for micro-machining of transparent materials. To extend the method to additional materials the pulsed radiation of a XeF-excimer laser (351 nm) was used for etching different types of glass (Corning Inc.: Pyrex, 7059 and Schott Group: D263, AF45) and fused silica for comparison. The etch rates of the investigated materials increase almost linear at low laser fluences. Threshold fluences for glass as low as 0.5 J/cm 2 and etch rates from 6 to 10 nm per pulse at 1 J/cm 2 have been determined. The etch rate and the threshold fluence depend also on the used liquid, consisting of a solvent (acetone, toluene) and a certain concentration of dissolved pyrene, but only little on the glass type. Due to the low etch rate typically very smooth surfaces are achieved. The surface roughness measured by AFM on Corning 7059-glass at an etch depth of 3.7 μm is as low as 4 nm. Contrary to the other glasses the surface roughness of Pyrex is much higher and dominated by typical arbitrary etch pits with micron dimensions. Comparing the etching of fused silica at a wavelength of 248 and 351 nm the used solution influences both the etch threshold and the etch rate. In accordance to earlier investigations at 248 nm also XeF-laser etching at the interface to an absorbing liquid results in a good surface quality, well defined patterns and almost no debris deposition. Thus, this technique is a good candidate for precise micro-machining applications.

  2. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-01

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF6 plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi2Se3 at temperatures ranging from 30 mK to 9 K.

  3. Fabrication of sub-15 nm aluminum wires by controlled etching

    NASA Astrophysics Data System (ADS)

    Morgan-Wall, T.; Hughes, H. J.; Hartman, N.; McQueen, T. M.; Marković, N.

    2014-04-01

    We describe a method for the fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is simultaneously measured in-situ. The etching process can be stopped when the desired resistance is reached, and can be restarted at a later time. The resulting nanowires show a superconducting transition as a function of temperature and magnetic field that is consistent with their smaller diameter. The width of the transition is similar to that of the lithographically defined wires, indicating that the etching process is uniform and that the wires are undamaged. This technique allows for precise control over the normal state resistance and can be used to create a variety of aluminum nanodevices.

  4. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    SciTech Connect

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-07

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.

  5. Temperature effects on sealed lead acid batteries and charging techniques to prolong cycle life.

    SciTech Connect

    Hutchinson, Ronda

    2004-06-01

    Sealed lead acid cells are used in many projects in Sandia National Laboratories Department 2660 Telemetry and Instrumentation systems. The importance of these cells in battery packs for powering electronics to remotely conduct tests is significant. Since many tests are carried out in flight or launched, temperature is a major factor. It is also important that the battery packs are properly charged so that the test is completed before the pack cannot supply sufficient power. Department 2665 conducted research and studies to determine the effects of temperature on cycle time as well as charging techniques to maximize cycle life and cycle times on sealed lead acid cells. The studies proved that both temperature and charging techniques are very important for battery life to support successful field testing and expensive flight and launched tests. This report demonstrates the effects of temperature on cycle time for SLA cells as well as proper charging techniques to get the most life and cycle time out of SLA cells in battery packs.

  6. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  7. Nanoscrews: Asymmetrical Etching of Silver Nanowires.

    PubMed

    Tan, Rachel Lee Siew; Chong, Wen Han; Feng, Yuhua; Song, Xiaohui; Tham, Chu Long; Wei, Jun; Lin, Ming; Chen, Hongyu

    2016-08-31

    World's smallest screws with helical threads are synthesized via mild etching of Ag nanowires. With detailed characterization, we show that this nanostructure arises not from the transformation of the initial lattice, but the result of a unique etching mode. Three-dimensional printed models are used to illustrate the evolution of etch pits, from which a possible mechanism is postulated. PMID:27513181

  8. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  9. Improved Experimental Techniques for Analyzing Nucleic Acid Transport Through Protein Nanopores in Planar Lipid Bilayers

    NASA Astrophysics Data System (ADS)

    Costa, Justin A.

    The translocation of nucleic acid polymers across cell membranes is a fundamental requirement for complex life and has greatly contributed to genomic molecular evolution. The diversity of pathways that have evolved to transport DNA and RNA across membranes include protein receptors, active and passive transporters, endocytic and pinocytic processes, and various types of nucleic acid conducting channels known as nanopores. We have developed a series of experimental techniques, collectively known as "Wicking", that greatly improves the biophysical analysis of nucleic acid transport through protein nanopores in planar lipid bilayers. We have verified the Wicking method using numerous types of classical ion channels including the well-studied chloride selective channel, CLIC1. We used the Wicking technique to reconstitute α-hemolysin and found that DNA translocation events of types A and B could be routinely observed using this method. Furthermore, measurable differences were observed in the duration of blockade events as DNA length and composition was varied, consistent with previous reports. Finally, we tested the ability of the Wicking technology to reconstitute the dsRNA transporter Sid-1. Exposure to dsRNAs of increasing length and complexity showed measurable differences in the current transitions suggesting that the charge carrier was dsRNA. However, the translocation events occurred so infrequently that a meaningful electrophysiological analysis was not possible. Alterations in the lipid composition of the bilayer had a minor effect on the frequency of translocation events but not to such a degree as to permit rigorous statistical analysis. We conclude that in many instances the Wicking method is a significant improvement to the lipid bilayer technique, but is not an optimal method for analyzing transport through Sid-1. Further refinements to the Wicking method might have future applications in high throughput DNA sequencing, DNA computation, and

  10. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG. PMID:26521000

  11. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  12. The effect of additional etching and curing mechanism of composite resin on the dentin bond strength

    PubMed Central

    Lee, In-Su; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

    2013-01-01

    PURPOSE The aim of this study was to evaluate the effects of additional acid etching and curing mechanism (light-curing or self-curing) of a composite resin on the dentin bond strength and compatibility of one-step self-etching adhesives. MATERIALS AND METHODS Sixteen human permanent molars were randomly divided into eight groups according to the adhesives used (All-Bond Universal: ABU, Clearfil S3 Bond: CS3), additional acid etching (additional acid etching performed: EO, no additional acid etching performed: EX), and composite resins (Filtek Z-250: Z250, Clearfil FII New Bond: CFNB). Group 1: ABU-EO-Z250, Group 2: ABU-EO-CFNB, Group 3: ABU-EX-Z250, Group 4: ABU-EX-CFNB, Group 5: CS3-EO-Z250, Group 6: CS3-EO-CFNB, Group 7: CS3-EX-Z250, Group 8: CS3-EX-CFNB. After bonding procedures, composite resins were built up on dentin surfaces. After 24-hour water storage, the teeth were sectioned to make 10 specimens for each group. The microtensile bond strength test was performed using a microtensile testing machine. The failure mode of the fractured specimens was examined by means of an optical microscope at ×20 magnification. The data was analyzed using a one-way ANOVA and Scheffe's post-hoc test (α=.05). RESULTS Additional etching groups showed significantly higher values than the no additional etching group when using All-Bond Universal. The light-cured composite resin groups showed significantly higher values than the self-cured composite resin groups in the Clearfil S3 Bond. CONCLUSION The additional acid etching is beneficial for the dentin bond strength when using low acidic one-step self-etch adhesives, and low acidic one-step self-etch adhesives are compatible with self-cured composite resin. The acidity of the one-step self-etch adhesives is an influencing factor in terms of the dentin bonding strength and incompatibility with a self-cured composite resin. PMID:24353889

  13. Current techniques in acid-chloride corrosion control and monitoring at The Geysers

    SciTech Connect

    Hirtz, Paul; Buck, Cliff; Kunzman, Russell

    1991-01-01

    Acid chloride corrosion of geothermal well casings, production piping and power plant equipment has resulted in costly corrosion damage, frequent curtailments of power plants and the permanent shut-in of wells in certain areas of The Geysers. Techniques have been developed to mitigate these corrosion problems, allowing continued production of steam from high chloride wells with minimal impact on production and power generation facilities.The optimization of water and caustic steam scrubbing, steam/liquid separation and process fluid chemistry has led to effective and reliable corrosion mitigation systems currently in routine use at The Geysers. When properly operated, these systems can yield steam purities equal to or greater than those encountered in areas of The Geysers where chloride corrosion is not a problem. Developments in corrosion monitoring techniques, steam sampling and analytical methodologies for trace impurities, and computer modeling of the fluid chemistry has been instrumental in the success of this technology.

  14. Intercomparison of the DOAS and LOPAP techniques for the detection of nitrous acid (HONO)

    NASA Astrophysics Data System (ADS)

    Kleffmann, J.; Lörzer, J. C.; Wiesen, P.; Kern, C.; Trick, S.; Volkamer, R.; Rodenas, M.; Wirtz, K.

    Recent studies have demonstrated that nitrous acid (HONO) is a source of hydroxyl radicals (OH) in the boundary layer not only early in the morning but also throughout the day. Despite its importance, all known instruments to detect HONO in the atmosphere suffer either from the great experimental effort necessary or from the possibility of significant interferences. In addition, only a few instruments are sensitive enough to detect low HONO concentrations during daytime. Accordingly, validated and sensitive measurements of nitrous acid are of paramount importance to describe the oxidation capacity of the atmosphere. Up to now, in intercomparisons of these chemical detectors with the well accepted DOAS technique significantly higher concentrations have been detected during the day with the chemical detectors, the discrepancy being attributed to interferences. In the present study, a recently developed HONO instrument (LOPAP) was validated against the DOAS technique, both in the field and in a large smog chamber under various conditions. Since sampling artefacts were minimised and interferences were measured and corrected for by the LOPAP instrument excellent agreement was obtained between these techniques during daytime as well as night-time. It is demonstrated that chemical instruments, which do not measure and do not correct interferences may significantly overestimate daytime concentrations of HONO caused by unknown interferences, which are particularly important during daytime, when HONO concentrations are low. For the DOAS technique, the possibility of HONO impurities in the NO 2 reference spectra used for the spectral analysis needs to be treated actively in the evaluation process, to avoid a potential negative interference at low HONO/NO 2 ratios. A simple procedure is presented that eliminates this possible error source in DOAS measurements of HONO in the atmosphere.

  15. Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron source

    NASA Astrophysics Data System (ADS)

    Watanabe, Heiji; Matsui, Shinji

    1992-12-01

    Electron-beam (EB)-assisted dry etching of GaAs using Ar electron cyclotron resonance (ECR) plasma as an electron shower source is developed to achieve a low energy and high current density electron beam (EB). The rate of EB-assisted dry etching is more than ten times larger than for Cl2 gas etching.It is confirmed, through photoluminescence measurement, that this etching method causes less damage than ion beam techniques and is very effective for damaged layer removal. Using this technique, a 0.4 μm linewidth low-damage fine structure of GaAs was fabricated.

  16. Consideration of correlativity between litho and etching shape

    NASA Astrophysics Data System (ADS)

    Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

    2012-03-01

    We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

  17. Laser etching of austenitic stainless steels for micro-structural evaluation

    NASA Astrophysics Data System (ADS)

    Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

    2015-06-01

    Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

  18. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. PMID:26918838

  19. Techniques for jar formation of valve-regulated lead-acid batteries

    NASA Astrophysics Data System (ADS)

    Weighall, M. J.

    The market for valve-regulated lead-acid (VRLA) batteries is growing steadily and will be given a further boost as the market for 36-V batteries for the 42-V PowerNet develops over the next few years. The manufacture of VRLA batteries poses, however, a number of complex technical problems that are not experienced in the manufacture of conventional flooded batteries. For the large-scale manufacture of automotive batteries or other small VRLA batteries of 100 Ah or less, jar formation rather than plate formation and dry charge would seem to be a logical and economically sound decision. For this to be successful, however, a number of key issues need to be reviewed, starting with a detailed consideration of battery design. This paper reviews issues associated with the jar formation of VRLA batteries. Guidance is given concerning filling techniques (gravity or vacuum fill), the formation process, charging techniques, and formation algorithms. Battery design and separator optimisation is discussed. The properties of the separator, e.g. wicking rate, fibre composition, surface area and compression, may have a critical impact on acid filling and jar formation, and may partially determine the filling and formation conditions to be used. The control of temperature during formation is particularly important. Formation algorithms and temperature data are presented. Attention is drawn to the possible loss of plate-group compression during the formation process, and how this may be avoided.

  20. Determination of nucleic acids with a near infrared cyanine dye using resonance light scattering technique

    NASA Astrophysics Data System (ADS)

    Fang, Fang; Zheng, Hong; Li, Ling; Wu, Yuqin; Chen, Jinlong; Zhuo, Shujuan; Zhu, Changqing

    2006-06-01

    A new method for the determination of nucleic acids has been developed based on the enhancement effect of resonance light scattering (RLS) with a cationic near infrared (NIR) cyanine dye. Under the optimal conditions, the enhanced RLS intensity at 823 nm is proportional to the concentration of nucleic acids in the range of 0-400 ng mL -1 for both calf thymus DNA (CT DNA) and fish sperm DNA (FS DNA), 0-600 ng mL -1 for snake ovum RNA (SO RNA). The detection limits are 3.5 ng mL -1, 3.4 ng mL -1 and 2.9 ng mL -1 for CT DNA, FS DNA and SO RNA, respectively. Owing to performing in near infrared region, this method not only has high sensitivity endowed by RLS technique but also avoids possible spectral interference from background. It has been applied to the determination of nucleic acids in synthetic and real samples and satisfactory results were obtained.

  1. A comparison of various modes of liquid-liquid based microextraction techniques: determination of picric acid.

    PubMed

    Burdel, Martin; Šandrejová, Jana; Balogh, Ioseph S; Vishnikin, Andriy; Andruch, Vasil

    2013-03-01

    Three modes of liquid-liquid based microextraction techniques--namely auxiliary solvent-assisted dispersive liquid-liquid microextraction, auxiliary solvent-assisted dispersive liquid-liquid microextraction with low-solvent consumption, and ultrasound-assisted emulsification microextraction--were compared. Picric acid was used as the model analyte. The determination is based on the reaction of picric acid with Astra Phloxine reagent to produce an ion associate easily extractable by various organic solvents, followed by spectrophotometric detection at 558 nm. Each of the compared procedures has both advantages and disadvantages. The main benefit of ultrasound-assisted emulsification microextraction is that no hazardous chlorinated extraction solvents and no dispersive solvent are necessary. Therefore, this procedure was selected for validation. Under optimized experimental conditions (pH 3, 7 × 10(-5) mol/L of Astra Phloxine, and 100 μL of toluene), the calibration plot was linear in the range of 0.02-0.14 mg/L and the LOD was 7 μg/L of picric acid. The developed procedure was applied to the analysis of spiked water samples. PMID:23381802

  2. Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

    SciTech Connect

    Schmidt, Torsten; Zhang, Miao; Linnros, Jan; Yu, Shun

    2014-09-22

    We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find the limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.

  3. Secret of formulating a selective etching or cleaning solution for boron nitride (BN) thin film

    NASA Astrophysics Data System (ADS)

    Hui, Wing C.

    2004-04-01

    Boron nitride thin film has a very unique characteristic of extremely high chemical inertness. Thus, it is a better hard mask than silicon nitride for aggressive etching solutions, such as the isotropic HF/HNO3/CH3COOH (or HNA) etchant for silicon. However, because of its high chemical inertness, it is also difficult to remove it. Plasma etching with Freon gases can etch the boron nitride film, but it is unselective to silicon, silicon dioxide or silicon nitride. Cleaning up the boron nitride film with plasma etching will usually leave a damaged or foggy surface. A special wet chemical solution has been developed for etching or cleaning boron nitride film selectively. It can etch boron nitride, but not the coatings or substrates of silicon, silicon nitride and silicon dioxide. It is a very strong oxidizing agent consisting of concentrated sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), but different from the common Piranha Etch. It may be even more interesting to understand the logic or secret behind of how to formulate a new selective etching solution. Various chemical and chemical engineering aspects were considered carefully in our development process. These included creating the right electrochemical potential for the etchant, ensuring large differences in chemical kinetics to make the reactions selective, providing proper mass transfer for removing the by products, etc.

  4. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  5. Low-Temperature Aging of Delta-Ferrite in 316L SS Welds; Changes in Mechanical Properties and Etching Properties

    NASA Astrophysics Data System (ADS)

    Abe, Hiroshi; Shimizu, Keita; Watanabe, Yutaka

    Thermal aging embrittlement of LWR components made of stainless cast (e.g. CF-8 and CF-8M) is a potential degradation issue, and careful attention has been paid on it. Although welds of austenitic stainless steels (SSs) have γ-δ duplex microstructure, which is similar to that of the stainless cast, examination on thermal aging characteristics of the SS welds is very limited. In order to evaluate thermal aging behavior of weld metal of austenitic stainless steel, the 316L SS weld metal has been prepared and changes in mechanical properties and in etching properties at isothermal aging at 335°C have been investigated. The hardness of the ferrite phase has increased with aging, while the hardness of austenite phase has stayed same. It has been suggested that spinodal decomposition has occurred in δ-ferrite by the 335°C aging. The etching rates of δ-ferrite at immersion test in 5wt% hydrochloric acid solution have been also investigated using an AFM technique. The etching rate of ferrite phase has decreased consistently with the increase in hardness of ferrite phase. It has been thought that this characteristic is also caused by spinodal decomposition of ferrite into chromium-rich (α') and iron-rich (α).

  6. Cryo-Etched Black Silicon for Use as Optical Black

    NASA Technical Reports Server (NTRS)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  7. Plasmoids for etching and deposition

    NASA Astrophysics Data System (ADS)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  8. Polymer protective coating for wet deep silicon etching processes

    NASA Astrophysics Data System (ADS)

    Spencer, Mary; Ruben, Kim; Li, Chenghong; Williams, Paul; Flaim, Tony D.

    2003-01-01

    A need exists for spin-applied polymeric coatings to protect electronic circuitry and other sensitive structures on MEMS devices during deep silicon wet etching processes involving corrosive mixtures of aqueous acids and bases. The challenge exists in developing protective coatings that do not decompose or dissolve in the harsh etchants and, more importantly, that maintain good adhesion to the substrate during the sometimes long etching processes. We have developed a multilayer coating system that is stable and adheres well to silicon nitride and other semiconductor materials and affords chemical protection for at least eight hours in hot potassium hydroxide etchant. The same coating system is also compatible with concentrated hydrofluoric acid etchants, which can diffuse rapidly through many polymeric materials to attack the device substrate.

  9. Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

    NASA Astrophysics Data System (ADS)

    Liao, Ying-Jie; Lou, Yan-Hui; Wang, Zhao-Kui; Liao, Liang-Sheng

    2014-11-01

    A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current—voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

  10. Reactive Ion Etching of Polymers in Oxygen Based Plasmas: a Study of Etch Mechanisms.

    NASA Astrophysics Data System (ADS)

    Graham, Sandra Wolterman

    The reactive ion etching of polymers has been studied in oxygen-based plasmas in an effort to understand the contributions of various mechanisms to the etching of these materials. Of the four active etch mechanisms; surface damage promoted etching, chemical sputtering, chemically enhanced physical sputtering, and direct reactive ion etching; the emphasis of this work has been on determining the relative contribution of direct reactive ion etching to the overall etching process. The etching of photoresist, polyimide, and amorphous carbon in O_2-CF_4 plasmas was studied in an asymmetrical reactive ion etcher at pressures ranging from 5 to 100 mtorr. Etch yield, ion flux, and oxygen atom concentration data were collected. The fit of this data to a linear model proposed by Joubert et al. (J. Appl. Phys., 65, 1989, 5096) was compared to the fit of the data to a nonlinear model proposed by the author. The linear model accounts for contribution due to three of the four etch mechanisms, but does not include contributions due to direct reactive ion etching. The nonlinear model accounts for contributions due to all four etch mechanisms. Experimental results indicate that the nonlinear model provides a better fit to the data than does the linear model. The relative contribution of direct reactive ion etching to the etching of photoresist ranges from 27% to 81% as the pressure decreases from 100 to 5 mtorr. Similar results are obtained for polyimide and amorphous carbon.

  11. Direct observation of silicon surface etching by water with scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Pietsch, G. J.; Köhler, U.; Henzler, M.

    1992-09-01

    One of the key processes in wet chemical preparation of silicon surfaces for device fabrication is a final rinsing step with water after oxide removal and hydrogen-termination with hydrofluoric acid. On rinsing at elevated temperature (boiling water) the slow statistical oxidation of the surface known from conventional treatment with water at room temperature is replaced by a rapid anisotropic etching attack. On Si(111) scanning tunneling microscopy shows characteristic triangular etch defects and flat (111) terraces separated by monatomic steps along <0 overline11>. The resulting surface is chemically homogeneous without any oxide. Structure and removal mechanism are compared to NH 4F-etched samples.

  12. Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, Robert T.; Schuller, Ivan K.; Falco, Charles M.

    1981-01-01

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  13. Method for etching thin films of niboium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, R.T.; Schuller, I.K.; Falco, C.M.

    1979-11-23

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds is provided in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid, and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  14. Effect of enamel etching time on roughness and bond strength.

    PubMed

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra) and composite to enamel shear bond strengths (SBS) were determined following the treatment of flat ground human enamel (4000 grit) with five adhesive systems: (1) Adper Single Bond Plus (SBP), (2) Adper Prompt L-Pop (PLP), (3) Clearfil SE Bond (CSE), (4) Clearfil S3 Bond (CS3) and (5) Xeno IV (X4), using recommended treatment times and an extended treatment time of 60 seconds (n = 10/group). Control groups were also included for Ra (4000 grit surface) and SBS (no enamel treatment and Adper Scotchbond Multi-Purpose Adhesive). For surface roughness measurements, the phosphoric acid conditioner of the SBP etch-and-rinse system was rinsed from the surface with an air-water spray, and the other four self-etch adhesive agents were removed with alternating rinses of water and acetone. A Proscan 2000 non-contact profilometer was used to determine Ra values. Composite (Z100) to enamel bond strengths (24 hours) were determined using Ultradent fixtures and they were debonded with a crosshead speed of 1 mm/minute. The data were analyzed with ANOVA and Fisher's LSD post-hoc test. The etch-and- rinse system (SBP) produced the highest Ra (microm) and SBS (MPa) using both the recommended treatment time (0.352 +/- 0.028 microm and 40.5 +/- 6.1 MPa) and the extended treatment time (0.733 +/- 0.122 microm and 44.2 +/- 8.2 MPa). The Ra and SBS of the etch-and-rinse system were significantly greater (p < 0.05) than all the self-etch systems and controls. Increasing the treatment time with phosphoric acid (SBP) and PLP produced greater surface roughness (p < 0.05) but did not result in significantly higher bond strengths (p > 0.05). PMID:19363978

  15. Interaction of F atoms with SiOCH ultra low-k films. Part II: etching

    NASA Astrophysics Data System (ADS)

    Rakhimova, T. V.; Lopaev, D. V.; Mankelevich, Yu A.; Kurchikov, K. A.; Zyryanov, S. M.; Palov, A. P.; Proshina, O. V.; Maslakov, K. I.; Baklanov, M. R.

    2015-05-01

    The etch mechanism of porous SiOCH-based low-k films by F atoms is studied. Five types of ultra-low-k (ULK) SiOCH films with k-values from 1.8 to 2.5 are exposed to F atoms in the far downstream of an SF6 inductively coupled plasma discharge. The evolution of etching with an F dose was studied using various techniques of surface and material analysis such as FTIR, XPS, EDS and SE. It is revealed that the etch mechanism is connected with surface fluorination and formation of -CHxFy species on the surface due to H abstraction by F atoms from -CH3 groups. It is shown that the etching includes two phases. The first one is observed at the low F doses and is connected with chemical modification and etching of walls in the topmost pores, which finishes when the walls are fully etched. At the same time, the additional etching in the underlying pores due to F penetration forms the etch depth profile, after that the second etching phase starts. This phase is characterized by the higher etch rate due to the propagation of the etch depth profile further into the film. The preliminary treatment of pore walls inside porous channels effectively accelerates etching many times compared to non-porous material. The acceleration depends on the modification depth, which in turn is a function of pore structure and interconnectivity as well as the F atom reaction mechanism. The combined random walk (Monte-Carlo) & kinetics model developed to describe F penetration inside SiOCH films together with reactions of F atoms leading to -CHxFy depletion and opening SiOx bonds for F access allowed relating the increased etch rates with increasing the total number of F atom collisions inside interconnected pores. The etch mechanism of SiOCH films is found in many respects to be similar to the SiO2 etch mechanism on the elementary level, but as whole it is ruled by the SiOCH structure: porosity degree, pore size, pore interconnectivity as well as structural features of SiOx bonds.

  16. Reactive ion etching in the Gaseous Electronics Conference RF Reference Cell

    SciTech Connect

    Brake, M.L.; Pender, J.T.P.; Buie, M.J.; Ricci, A.; Soniker, J.; Pochan, P.D.; Miller, P.A.

    1995-07-01

    This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystalline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM), profilometry, and refraction techniques were used to determine the etch parameters such as etch rate, uniformity and selectivity. The discharges are in general monitored by measuring the optical emission spectroscopy and the bias voltages. For fluorine chemistries, etch rates ranged from 5 nm/min to 177 nm/min, and for chlorine chemistries, etch rates ranged from 25 nm/min to 90 nm/min. Depending upon the discharge and chemistry conditions, similar etch rates and etch patterns of different GEC cells were obtained. Etch rates and relative fluorine concentrations obtained from a commercial etcher were compared to the GEC reference cell and were found to be similar although the GEC cell generally gave lower etch rates than the commercial etcher.

  17. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  18. Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

    NASA Astrophysics Data System (ADS)

    Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

    2015-03-01

    Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

  19. A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok; Wild, Larry

    2003-01-01

    Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

  20. Effects of Acidity and Stress on Stomach Motility, Assessed by Biomagnetic Technique: Preliminary Results

    NASA Astrophysics Data System (ADS)

    Córdova-Fraga, T.; Sosa-Aquino, M.; Huerta-Franco, R.; Vargas-Luna, M.; Gutiérrez-Juárez, G.; Bernal-Alvarado, J.

    2004-09-01

    The human stomach is a J shaped hollowed organ that undergoes a variable luminal volume without significant pressure changes. This organ has two valves: the cardiac localized in the upper part, and the pillory on the lower part of the organ respectively. The main functions of these valves are to storage, carry, triturate and empty the lumen content. However, their activity could be affected for different agents such as chemical stimulus (alcoholic beverages) and psychological stress. In this contribution we show by the first time, the importance of biomagnetic signal technique in order to measure the human stomach peristaltic frequency in healthy subjects who were evaluated in basal conditions, and after to be submitted at the effects of: acidity caused by alcoholic beverages and psychological stress.

  1. Improved lead recovery and sulphate removal from used lead acid battery through electrokinetic technique.

    PubMed

    Soundarrajan, C; Sivasankar, A; Maruthamuthu, S; Veluchamy, A

    2012-05-30

    This paper presents improvement in lead (Pb) recovery and sulphate removal from used Pb acid battery (ULAB) through Electrokinetic technique, a process aimed to eliminate environmental pollution that arises due to emission of gases and metal particles from the existing high temperature pyrometallurgical process. Two different cell configurations, (1) one with Nafion membrane placed between anode and middle compartments and Agar membrane between cathode and middle compartments and (2) another with only Agar membrane placed between both sides of the middle compartments were designed for the Pb and sulphate separation from ULAB. This paper concludes that the cell with only Agar membranes performed better than the cell with Nafion and Agar membranes in combinations and also explains the mechanism underlying the chemical and electrochemical processes in the cell. PMID:22483596

  2. Growth and characterization of urea-oxalic acid crystals by solution growth technique

    NASA Astrophysics Data System (ADS)

    Chithambaram, V.; Jerome Das, S.; Krishnan, Sivakumar; Basheer Ahamed, M.; Arivudai Nambi, R.

    2013-11-01

    Single crystals of urea-oxalic acid (UOA) have been grown from aqueous solution by slow evaporation technique. Single crystal X-ray diffraction analysis confirmed that the grown crystals belong to monoclinic system having space group P21/C. The presence of functional groups was confirmed by using Fourier transform infrared (FTIR) spectroscopy. Optical absorption studies show very low absorption in entire visible region and the UV cut-off is found to be around 240 nm. Thermal analysis studies were carried out using TG/DTA analysis and the grown crystal is thermally stable up to 180 °C. Dielectric constant studies confirm the ferroelectric property of the materials and very low dielectric loss reveals very high purity of the crystal.

  3. Aspects of native oxides etching on n-GaSb(1 0 0) surface

    NASA Astrophysics Data System (ADS)

    Cotirlan, C.; Ghita, R. V.; Negrila, C. C.; Logofatu, C.; Frumosu, F.; Lungu, G. A.

    2016-02-01

    Gallium antimonide (GaSb) is the basis of the most photovoltaic and thermophotovoltaic (TPV) systems and its innovative technological aspects based on modern ultra-high vacuum techniques are in trend for device achievement. The real surface of GaSb is modified by technological processes that can conduce to problems related to the reproducible control of its surface properties. The GaSb surface is reactive in atmosphere due to oxygen presence and exhibits a native oxide layer. The evolution of native oxides during the ion sputtering, chemical etching and thermal annealing processes for preparing the surface is presented in detailed way. Ratios of surface constituents are obtained by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Moreover, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM) and Low-Energy Electron Diffraction (LEED) are used for characterization. The surface stoichiometry is changed using a specific etchant (e.g. citric acid) at different etching time and is analyzed by ARXPS, SEM, EDS and AFM methods. The experimental results provide useful information regarding surface native oxides characteristics on n-GaSb(1 0 0) to be taken into account for development of low resistance contacts for TPV devices based on GaSb alloy.

  4. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  5. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  6. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  7. AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

    NASA Astrophysics Data System (ADS)

    Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

    2001-10-01

    The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

  8. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process.

    PubMed

    Bian, Hao; Yang, Qing; Chen, Feng; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations. PMID:23623098

  9. Photonic jet to improve the lateral resolution of laser etching

    NASA Astrophysics Data System (ADS)

    Abdurrochman, Andri; Lecler, Sylvain; Fontaine, Joël.; Mermet, Frédéric; Meyrueis, Patrick; Tumbelaka, Bernard Y.; Montgomery, Paul

    2014-05-01

    The techniques applying laser beams or optical systems are limited by the diffraction limit of the optical heads used. We demonstrate theoretically and experimentally that the use of the photonic jet allows an improvement in the optical resolution to achieve smaller etching without reducing the wavelength of the source. The potential of the photonic jet using a nanosecond pulsed near-infrared laser for micro-fabrication is also demonstrated. These lasers are the most common type of laser used in industrial processes because of their price and the fact that well-packaged sources are available. Their typical spatial resolution in laser etching is limited by the spot size of their focus point at around 25-70 μm. This is the reason why a photonic jet, a high spatial concentration onto a half-wavelength spot of a beam that emerges in the vicinity of a dielectric microsphere, is of great interest. In our experiments, micro-scale glass (ns = 1.5) and BaTiO3 spheres (ns = 1.9) have been used to achieve photonic jets. The etching process has been tested on two substrates: silicon wafers, which have a significant absorption at 1064 nm, and glass plates, which have a lower absorption at this wavelength. The smallest marking achieved on silicon has an average diameter of 1.3 μm and despite the low absorption, micrometric etchings have also been achieved on glass using larger microspheres.

  10. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    PubMed

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-01-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts. PMID:26634813

  11. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

    NASA Astrophysics Data System (ADS)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  12. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

    PubMed Central

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-01-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts. PMID:26634813

  13. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  14. Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching.

    PubMed

    Jiang, Bing; Li, Meicheng; Liang, Yu; Bai, Yang; Song, Dandan; Li, Yingfeng; Luo, Jian

    2016-02-01

    The etching anisotropy induced by the morphology and rotation of silver particles controls the morphology of silicon nanoporous structures, through various underlying complex etching mechanisms. The level of etching anisotropy can be modulated by controlling the morphology of the silver catalyst to obtain silicon nanoporous structures with straight pores, cone-shaped pores and pyramid-shaped pores. In addition, the structures with helical pores are obtained by taking advantage of the special anisotropic etching, which is induced by the rotation and revolution of silver particles during the etching process. An investigation of the etching anisotropy during metal assisted chemical etching will promote a deep understanding of the chemical etching mechanism of silicon, and provide a feasible approach to fabricate Si nanoporous structures with special morphologies. PMID:26785718

  15. Characterization of the microbial acid mine drainage microbial community using culturing and direct sequencing techniques.

    PubMed

    Auld, Ryan R; Myre, Maxine; Mykytczuk, Nadia C S; Leduc, Leo G; Merritt, Thomas J S

    2013-05-01

    We characterized the bacterial community from an AMD tailings pond using both classical culturing and modern direct sequencing techniques and compared the two methods. Acid mine drainage (AMD) is produced by the environmental and microbial oxidation of minerals dissolved from mining waste. Surprisingly, we know little about the microbial communities associated with AMD, despite the fundamental ecological roles of these organisms and large-scale economic impact of these waste sites. AMD microbial communities have classically been characterized by laboratory culturing-based techniques and more recently by direct sequencing of marker gene sequences, primarily the 16S rRNA gene. In our comparison of the techniques, we find that their results are complementary, overall indicating very similar community structure with similar dominant species, but with each method identifying some species that were missed by the other. We were able to culture the majority of species that our direct sequencing results indicated were present, primarily species within the Acidithiobacillus and Acidiphilium genera, although estimates of relative species abundance were only obtained from direct sequencing. Interestingly, our culture-based methods recovered four species that had been overlooked from our sequencing results because of the rarity of the marker gene sequences, likely members of the rare biosphere. Further, direct sequencing indicated that a single genus, completely missed in our culture-based study, Legionella, was a dominant member of the microbial community. Our results suggest that while either method does a reasonable job of identifying the dominant members of the AMD microbial community, together the methods combine to give a more complete picture of the true diversity of this environment. PMID:23485423

  16. Etch challenges for DSA implementation in CMOS via patterning

    NASA Astrophysics Data System (ADS)

    Pimenta Barros, P.; Barnola, S.; Gharbi, A.; Argoud, M.; Servin, I.; Tiron, R.; Chevalier, X.; Navarro, C.; Nicolet, C.; Lapeyre, C.; Monget, C.; Martinez, E.

    2014-03-01

    This paper reports on the etch challenges to overcome for the implementation of PS-b-PMMA block copolymer's Directed Self-Assembly (DSA) in CMOS via patterning level. Our process is based on a graphoepitaxy approach, employing an industrial PS-b-PMMA block copolymer (BCP) from Arkema with a cylindrical morphology. The process consists in the following steps: a) DSA of block copolymers inside guiding patterns, b) PMMA removal, c) brush layer opening and finally d) PS pattern transfer into typical MEOL or BEOL stacks. All results presented here have been performed on the DSA Leti's 300mm pilot line. The first etch challenge to overcome for BCP transfer involves in removing all PMMA selectively to PS block. In our process baseline, an acetic acid treatment is carried out to develop PMMA domains. However, this wet development has shown some limitations in terms of resists compatibility and will not be appropriated for lamellar BCPs. That is why we also investigate the possibility to remove PMMA by only dry etching. In this work the potential of a dry PMMA removal by using CO based chemistries is shown and compared to wet development. The advantages and limitations of each approach are reported. The second crucial step is the etching of brush layer (PS-r-PMMA) through a PS mask. We have optimized this step in order to preserve the PS patterns in terms of CD, holes features and film thickness. Several integrations flow with complex stacks are explored for contact shrinking by DSA. A study of CD uniformity has been addressed to evaluate the capabilities of DSA approach after graphoepitaxy and after etching.

  17. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  18. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  19. Continuous flow ink etching for direct micropattern of silicon dioxide

    NASA Astrophysics Data System (ADS)

    Xing, Jiyao; Rong, Weibin; Wang, Lefeng; Sun, Lining

    2016-07-01

    A continuous flow ink etching (CFIE) method is presented to directly create micropatterns on a 60 nm thick silicon dioxide (SiO2) layer. This technique employs a micropipette filled with potassium bifluoride (KHF2) aqueous solution to localize SiO2 dissolution in the vicinity of the micropipette tip. Both dot and line features with well-defined edges were fabricated and used as hardmasks for silicon etching. The linear density of etchant ink deposited on the SiO2 can be used to regulate the depth, width and 2D morphology of the line pattern. The characterization of CFIE including the resolution (about 4 μm), reproducibility and capability to form complex structures are reported. This technique provides a simple and flexible alternative to generate the SiO2 hardmask for silicon microstructure fabrication.

  20. Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

    SciTech Connect

    Mehran, M.; Mohajerzadeh, S.; Sanaee, Z.; Abdi, Y.

    2010-05-17

    Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.

  1. Low-temperature vapor-phase etching of silicon carbide by dioxygen difluoride

    NASA Astrophysics Data System (ADS)

    Moalem, M.; Olander, D. R.; Balooch, M.

    1995-06-01

    Efficient room-temperature vapor-phase etching of SiC by the compound dioxygen difluoride (FOOF) has been demonstrated. FOOF was generated using a design based on thermal-atomization technique which produced gram quantities of the compound per hour. On both poly- and epitype silicon carbide at room temperature, about 6% of the FOOF molecules striking the surface reacted to form SiF4 and CO. Examination by atomic force microscopy (AFM) showed that the roughness and morphology of the etched surface were virtually indistinguishable from those of the original surface. No residues or anisotropies were present on the etched surface.

  2. Integrated adsorptive technique for efficient recovery of m-cresol and m-toluidine from actual acidic and salty wastewater.

    PubMed

    Chen, Da; Liu, Fuqiang; Zong, Lidan; Sun, Xiaowen; Zhang, Xiaopeng; Zhu, Changqing; Tao, Xuewen; Li, Aimin

    2016-07-15

    An integrated adsorptive technique combining an m-cresol adsorption unit, an acid retardation unit and an m-toluidine adsorption unit in sequence was designed to recover m-cresol and m-toluidine from highly acidic and salty m-cresol manufacturing wastewater. In the first column packed with hypercrosslinked polymeric resin (NDA-99), most m-cresol was captured through π-π and hydrogen-bonding interactions as well as the salting-out effect, while m-toluidine was not absorbed due to protonation. To separate acid from salt, an acid retardation unit was introduced successively to adsorb sulfuric acid by strong base anion exchange resin (201×7). After the acid retardation unit and mild neutralization reaction, the last column filled with NDA-99 was applied to trap neutral m-toluidine from the salty effluent. Moreover, the eluent of the acid retardation unit was utilized as the regenerant to recover m-toluidine, and the recycled high-acidity and low-salinity solution of m-toluidine was directly used to produce m-cresol as the raw material. Therefore, the proposed method not only efficiently recycled m-cresol and m-toluidine, but also reduced the consumption of alkali dramatically (saving 0.1628t/t wastewater). These findings will inspire design of integrated adsorptive techniques for treating complex organic wastewater with high efficiency and low cost. PMID:27037473

  3. Ultradeep fused silica glass etching with an HF-resistant photosensitive resist for optical imaging applications

    NASA Astrophysics Data System (ADS)

    Nagarah, John M.; Wagenaar, Daniel A.

    2012-03-01

    Microfluidic and optical sensing platforms are commonly fabricated in glass and fused silica (quartz) because of their optical transparency and chemical inertness. Hydrofluoric acid (HF) solutions are the etching media of choice for deep etching into silicon dioxide substrates, but processing schemes become complicated and expensive for etching times greater than 1 h due to the aggressiveness of HF migration through most masking materials. We present here etching into fused silica more than 600 µm deep while keeping the substrate free of pits and maintaining a polished etched surface suitable for biological imaging. We utilize an HF-resistant photosensitive resist (HFPR) which is not attacked in 49% HF solution. Etching characteristics are compared for substrates masked with the HFPR alone and the HFPR patterned on top of Cr/Au and polysilicon masks. We used this etching process to fabricate suspended fused silica membranes, 8-16 µm thick, and show that imaging through the membranes does not negatively affect image quality of fluorescence microscopy of biological tissue. Finally, we realize small through-pore arrays in the suspended membranes. Such devices will have applications in planar electrophysiology platforms, especially where optical imaging is required.

  4. Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Kang, Seung Hyun; Yeom, Geun Young

    2013-11-15

    Silicon atomic layer etching (ALET) using Cl{sub 2} is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional damage removal method, such as the low-power CF{sub 4} plasma treatment technique, ALET produces less secondary damage to the substrate and gives exact etch depth control and extremely high etch selectivity to the contact SiO{sub 2} insulating pattern mold. When ALET is applied after a conventional damage removal technique, the sheet resistance of the damaged contact silicon surface is improved to a level close to that of a clean silicon surface, while exact atomic-scale depth control is maintained without changes in the pattern mold profile.

  5. Polymeric protective coatings for MEMS wet-etch processes

    NASA Astrophysics Data System (ADS)

    Ruben, Kimberly A.; Flaim, Tony D.; Li, Chenghong

    2004-01-01

    Microelectromechanical systems (MEMS) device manufacturers today are faced with the challenge of protecting electronic circuitry and other sensitive device structures during deep silicon wet-etch processes. Etch processes of this nature require prolonged exposure of the device to harsh corrosive mixtures of aqueous acids and bases at higher than ambient temperatures. A need exists for a spin-applied polymeric coating to prevent the exposure of such circuitry against the corrosive etchants. The challenge exists in developing protective coatings that will not decompose or dissolve in the etchants during the etch process. Such coatings require superior adhesion to the substrate without destroying the sensitive features below. Brewer Science, Inc., has developed a multilayer coating system for basic etchants which is compatible with a variety of semiconductor materials and offers protection against concentrated potassium hydroxide (KOH) etchants at prolonged exposure times of more than 8 hours. In addition, a second multilayer coating system is being developed for use with strong hydrofluoric and other various mixed acid etchants (MAEs) for exposures of 30 minutes or longer. These materials are specifically designed to protect circuitry subjected to concentrated MAEs during the wafer thinning processes used by MEMS device manufacturers.

  6. Analysis methods for meso- and macroporous silicon etching baths

    PubMed Central

    2012-01-01

    Analysis methods for electrochemical etching baths consisting of various concentrations of hydrofluoric acid (HF) and an additional organic surface wetting agent are presented. These electrolytes are used for the formation of meso- and macroporous silicon. Monitoring the etching bath composition requires at least one method each for the determination of the HF concentration and the organic content of the bath. However, it is a precondition that the analysis equipment withstands the aggressive HF. Titration and a fluoride ion-selective electrode are used for the determination of the HF and a cuvette test method for the analysis of the organic content, respectively. The most suitable analysis method is identified depending on the components in the electrolyte with the focus on capability of resistance against the aggressive HF. PMID:22805742

  7. Surface engineering on CeO2 nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation

    NASA Astrophysics Data System (ADS)

    Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

    2015-07-01

    Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications.Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications. Electronic supplementary information (ESI) available: Diameter distributions of as-prepared and etched samples, optical images, specific catalytic data of CO oxidation and comparison of CO oxidation. See DOI: 10.1039/c5nr01846c

  8. Cu/Cu direct bonding by metal salt generation bonding technique with organic acid and persistence of reformed layer

    NASA Astrophysics Data System (ADS)

    Koyama, Shinji; Hagiwara, Naoki; Shohji, Ikuo

    2015-03-01

    In this study, the effect of the metal salt generation bonding technique on the strength of a direct-bonded copper-copper interface was investigated. Copper surfaces were modified by boiling in several types of organic acids, and direct bonding was performed at a bonding temperature of 423-673 K under a load of 588 N (for a bonding time of 0.9 ks). As a result of the surface modification, bonded joints were obtained at bonding temperatures of 150 K (after treatment with formic acid) and 100 K (after citric acid treatment) lower than that required for the unmodified surfaces. In addition, the duration of the modification effects was investigated by exposing the modified surface to an air atmosphere furnace kept at 323 K. The bonding strength of the citric acid-modified surface remained unchanged even after 168 h, whereas that of the surface modified with formic acid decreased within 6 h.

  9. Structure, spectra and antioxidant action of ascorbic acid studied by density functional theory, Raman spectroscopic and nuclear magnetic resonance techniques

    NASA Astrophysics Data System (ADS)

    Singh, Gurpreet; Mohanty, B. P.; Saini, G. S. S.

    2016-02-01

    Structure, vibrational and nuclear magnetic resonance spectra, and antioxidant action of ascorbic acid towards hydroxyl radicals have been studied computationally and in vitro by ultraviolet-visible, nuclear magnetic resonance and vibrational spectroscopic techniques. Time dependant density functional theory calculations have been employed to specify various electronic transitions in ultraviolet-visible spectra. Observed chemical shifts and vibrational bands in nuclear magnetic resonance and vibrational spectra, respectively have been assigned with the help of calculations. Changes in the structure of ascorbic acid in aqueous phase have been examined computationally and experimentally by recording Raman spectra in aqueous medium. Theoretical calculations of the interaction between ascorbic acid molecule and hydroxyl radical predicted the formation of dehydroascorbic acid as first product, which has been confirmed by comparing its simulated spectra with the corresponding spectra of ascorbic acid in presence of hydrogen peroxide.

  10. Differentiating Milk and Non-milk Proteins by UPLC Amino Acid Fingerprints Combined with Chemometric Data Analysis Techniques.

    PubMed

    Lu, Weiying; Lv, Xiaxia; Gao, Boyan; Shi, Haiming; Yu, Liangli Lucy

    2015-04-22

    Amino acid fingerprinting combined with chemometric data analysis was used to differentiate milk and non-milk proteins in this study. Microwave-assisted hydrolysis and ultraperformance liquid chromatography (UPLC) were used to obtain the amino acid fingerprints. Both univariate and multivariate chemometrics methods were applied for differentiation. The confidence boundary of amino acid concentration, principal component analysis (PCA), and partial least-squares-discriminant analysis (PLS-DA) of the amino acid fingerprints demonstrated that there were significant differences between milk proteins and inexpensive non-milk protein powders from other biological sources including whey, peanut, corn, soy, fish, egg yolk, beef extract, collagen, and cattle bone. The results indicate that the amino acid compositions with the chemometric techniques could be applied for the detection of potential protein adulterants in milk. PMID:25835028

  11. Clinical benefit using sperm hyaluronic acid binding technique in ICSI cycles: a systematic review and meta-analysis.

    PubMed

    Beck-Fruchter, Ronit; Shalev, Eliezer; Weiss, Amir

    2016-03-01

    The human oocyte is surrounded by hyaluronic acid, which acts as a natural selector of spermatozoa. Human sperm that express hyaluronic acid receptors and bind to hyaluronic acid have normal shape, minimal DNA fragmentation and low frequency of chromosomal aneuploidies. Use of hyaluronic acid binding assays in intracytoplasmic sperm injection (ICSI) cycles to improve clinical outcomes has been studied, although none of these studies had sufficient statistical power. In this systematic review and meta-analysis, electronic databases were searched up to June 2015 to identify studies of ICSI cycles in which spermatozoa able to bind hyaluronic acid was selected. The main outcomes were fertilization rate and clinical pregnancy rate. Secondary outcomes included cleavage rate, embryo quality, implantation rate, spontaneous abortion and live birth rate. Seven studies and 1437 cycles were included. Use of hyaluronic acid binding sperm selection technique yielded no improvement in fertilization and pregnancy rates. A meta-analysis of all available studies showed an improvement in embryo quality and implantation rate; an analysis of prospective studies only showed an improvement in embryo quality. Evidence does not support routine use of hyaluronic acid binding assays in all ICSI cycles. Identification of patients that might benefit from this technique needs further study. PMID:26776822

  12. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  13. Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

    NASA Astrophysics Data System (ADS)

    Balasubramanian, Sriram; Raghavan, Srini

    2008-06-01

    Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

  14. Strongly reduced Si surface recombination by charge injection during etching in diluted HF/HNO3.

    PubMed

    Greil, Stefanie M; Schöpke, Andreas; Rappich, Jörg

    2012-08-27

    Herein, we investigate the behaviour of the surface recombination of light-induced charge carriers during the etching of Si in alkaline (KOH) and acidic etching solutions of HF/HNO(3)/CH(3)COOH (HNA) or HF/HNO(3)/H(3)PO(4) (HNP) at different concentration ratios of HF and HNO(3) by means of photoluminescence (PL) measurements. The surface recombination velocity is strongly reduced during the first stages of etching in HF/HNO(3)-containing solutions pointing to a interface well passivated by the etching process, where a positive surface charge is induced by hole injection from NO-related surface species into the Si near-surface region (back surface field effect). This injected charge leads to a change in band bending by about 150 mV that repulses the light-induced charge carriers from the surface and therefore enhances the photoluminescence intensity, since non-radiative surface recombination is reduced. PMID:22761060

  15. Etching with electron beam generated plasmas

    SciTech Connect

    Leonhardt, D.; Walton, S.G.; Muratore, C.; Fernsler, R.F.; Meger, R.A.

    2004-11-01

    A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride ({approx}200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride (SiO{sub x}F{sub y}) compounds. At low incident ion energies, the Ar-SF{sub 6} mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at {approx}75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.

  16. In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

    SciTech Connect

    Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark; Aydil, Eray S.

    2006-11-15

    The authors propose and demonstrate a technique to determine the ion incidence angle dependence of the ion-enhanced etching yield under realistic plasma conditions and in situ in an arbitrary plasma reactor. The technique is based on measuring the etch rate as a function of position along the walls of features that initially have nearly semicircular cross sections. These initial feature shapes can be easily obtained by wet or isotropic plasma etching of holes patterned through a mask. The etch rate as a function of distance along the feature profile provides the etching yield as a function of the ion incidence angle. The etch rates are measured by comparing digitized scanning electron micrograph cross sections of the features before and after plasma etching in gas mixtures of interest. The authors have applied this technique to measure the ion incidence angle dependence of the Si etching yield in HBr, Cl{sub 2}, SF{sub 6}, and NF{sub 3} plasmas and binary mixtures of SF{sub 6} and NF{sub 3} with O{sub 2}. Advantages and limitations of this method are also discussed.

  17. Preparation of Poly Acrylic Acid-Poly Acrylamide Composite Nanogels by Radiation Technique

    PubMed Central

    Ghorbaniazar, Parisa; Sepehrianazar, Amir; Eskandani, Morteza; Nabi-Meibodi, Mohsen; Kouhsoltani, Maryam; Hamishehkar, Hamed

    2015-01-01

    Purpose: Nanogel, a nanoparticle prepared from a cross-linked hydrophilic polymer network, has many biomedical applications. A radiation technique has recently been introduced as one of the appropriate methods for the preparation of polymeric nanogels due to its additive-free initiation and easy control procedure. Methods: We have investigated the formation of nano-sized polymeric gels, based on the radiation-induced inter- and intra-molecular cross-linking of the inter-polymer complex (IPC) of polyacrylamide (PAAm) and polyacrylic acide (PAAc). Results: The results indicated that the prepared polymeric complex composed of PAAm and PAAc was converted into nanogel by irradiation under different doses (1, 3, 5 and 7 kGy). This was due to inter- and intra-molecular cross-linking at the range of 446-930 nm as characterized by the photon correlation spectroscopy method. Increasing the irradiation dose reduced the size of nanoparticles to 3 kGy; however, the higher doses increased the size and size distribution. Scanning electron microscopy images indicated the nanogel formation in the reported size by particle size and showed the microcapsule structure of the prepared nanogels. Biocompatibility of nanogels were assessed and proved by MTT assay. Conclusion: It was concluded that low dose irradiation can be successfully applied for nanometre-ranged hydrogel. PMID:26236667

  18. Development of experimental techniques to study protein and nucleic acid structures

    SciTech Connect

    Trewhella, J.; Bradbury, E.M.; Gupta, G.; Imai, B.; Martinez, R.; Unkefer, C.

    1996-04-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). This research project sought to develop experimental tools for structural biology, specifically those applicable to three-dimensional, biomolecular-structure analysis. Most biological systems function in solution environments, and the ability to study proteins and polynucleotides under physiologically relevant conditions is of paramount importance. The authors have therefore adopted a three-pronged approach which involves crystallographic and nuclear magnetic resonance (NMR) spectroscopic methods to study protein and DNA structures at high (atomic) resolution as well as neutron and x-ray scattering techniques to study the complexes they form in solution. Both the NMR and neutron methods benefit from isotope labeling strategies, and all provide experimental data that benefit from the computational and theoretical tools being developed. The authors have focused on studies of protein-nucleic acid complexes and DNA hairpin structures important for understanding the regulation of gene expression, as well as the fundamental interactions that allow these complexes to form.

  19. Charging effect simulation model used in simulations of plasma etching of silicon

    SciTech Connect

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Rangelow, Ivo W.; Cooke, Mike

    2012-10-15

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)-a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured-as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  20. Charging effect simulation model used in simulations of plasma etching of silicon

    NASA Astrophysics Data System (ADS)

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Cooke, Mike; Rangelow, Ivo W.

    2012-10-01

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)—a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured—as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  1. Etching Behavior of Aluminum Alloy Extrusions

    NASA Astrophysics Data System (ADS)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  2. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  3. Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Ren, Z.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.; Yu, S.

    2008-02-01

    The etching characteristics of congruent LiNbO3 single crystals including doped LiNbO3 and proton-changed LiNbO3 have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO3 have been fabricated and optically measured.

  4. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  5. Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

    NASA Astrophysics Data System (ADS)

    Yokoyama, Meiso; Li, Jiin; Su, Shui; Su, Yan

    1994-12-01

    Indium-tin oxide (ITO) films coated on glass have been etched by reactive ion etching (RIE) with a gas mixture of Ar and Cl2. The etching rates of ITO films depend strongly on power density, gas pressure, the composition of reactive gases, and the total flow rate of etchants. According to the results from the study, we can postulate that the ITO films' etching follows the ion-assisted chemical etching. A high etching rate above 100 Å/min can be achieved, and an etching mechanism will be proposed. The selectivity of ITO films to glass reaches 35 with a 30 line/mm pattern. After exposure of ITO films to an Ar/Cl2 mixed gas plasma discharge, their sheet resistance does not markedly change. The residue of Cl atoms exists only in the region near the surface. By means of parameter control, we can obtain good pattern images of ITO films measured by scanning electron microscopy (SEM).

  6. Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Saidi, H.; Hidouri, T.; Fraj, I.; Saidi, F.; Bouazizi, A.

    2015-09-01

    Using Ag-assisted chemical etching technique, vertical silicon nanowires (SiNWs) arrays on n-type (0 0 1) substrates has been prepared with different conditions such as etching time and illumination condition. A photoluminescence measurement at room temperature has shown a decrease of PL intensity when decreasing etching time. These results are attributed to the decrease of SiNWs density and reduction of laser capture surface. The presence of defect states lead to a non-radiative recombination. Indeed, the blue shift observed when using a low etching time is due to the confinement effect. Using a low etching time, illumination condition does not vary SiNWs density. The optimal experimental condition for photovoltaic application is observed after deposition of Poly (3-hexylthiophene-2,5-diyl) P3HT into the different silicon substrates prepared. An important charges transfer between P3HT and SiNWs is observed for high etching time (120 min under illumination). A blue shift is due to the presence of defects and electric field.

  7. Etch-a-Sketch Nanoelectronics

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy

    2009-10-01

    The popular children's toy Etch-a-Sketch has motivated the invention of a new material capable of writing and erasing wires so small they approach the spacing between atoms. The interface between two normally insulating materials, strontium titanate and lanthanum aluminate, can be switched between the insulating and conducting state with the use of the sharp metallic probe of an atomic-force microscope. By ``sketching'' this probe in various patterns, one can create electronic materials with remarkably diverse properties. This material system shows promise both for ultra-high density storage and as possible replacements for silicon-based logic (CMOS). This work is supported by the National Science Foundation, Defense Advanced Research Projects Agency, Army Research Office and Air Force Office of Scientific Research.

  8. Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask

    PubMed Central

    2011-01-01

    We demonstrate an enhanced photo-sensitivity (PS) through an increased light-trapping using surface nano-structuring technique by inductively coupled plasma (ICP) etching on multi-walled carbon nanotube (MWCNT) etch masked Si with hexamethyl-disilazane (HMDS) dispersion. In order for a systematic comparison, four samples are prepared, respectively, by conventional photolithography and ICP etching using MWCNT as a etch mask. MWCNT-etched Si with HMDS dispersion shows the highest RMS roughness and the lowest reflectance of the four. Two test device structures are fabricated with active regions of bare-Si as a reference and MWCNT etch masked Si with HMDS dispersion. The increased light-trapping was most significant at mid-UV, somewhat less at visible and less noticeable at infrared. With an ICP-etched Si using CNT HMDS dispersion, PS is very sharply increased. This result can lead to applications in optoelectronics where the enhancement in light-trapping is important. PMID:22040026

  9. Optical and electrical diagnostics of fluorocarbon plasma etching processes

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul

    1999-05-01

    This article reviews recent work concerning the role of CF and CF2 radicals in etching and polymerization processes occurring in capacitively coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers in microelectronic device fabrication. Laser-induced fluorescence (LIF) was used to determine time-resolved axial concentration profiles of these species in continuous and pulse-modulated CF4 and C2F6 plasmas. Calibration techniques, including broad-band UV absorption spectroscopy, were developed to put the LIF measurements on an absolute scale. A novel technique was used to determine the ion flux to the reactor walls in these polymerizing environments. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer. It was found that CFx radicals are produced predominantly by the reflection of neutralized and dissociated CFx+ ions at the powered electrode surface. When the fluorine atom concentration is high, the CFx radicals are destroyed effectively by recombination catalysed by the reactor walls. When the fluorine atom concentration is lowered, the CF2 concentration rises markedly, and it participates in gas-phase oligomerization processes, forming large CxFy molecules and, after ionization, large CxFy+ ions. These species appear to be the true polymer precursors. This mechanism explains the well known correlation between high CF2 concentrations, polymer deposition and SiO2 over Si etch selectivity.

  10. Spectrophotometric Determination of the Dissociation Constant of an Acid-Base Indicator Using a Mathematical Deconvolution Technique

    ERIC Educational Resources Information Center

    Alter, Krystyn P.; Molloy, John L.; Niemeyer, Emily D.

    2005-01-01

    A laboratory experiment reinforces the concept of acid-base equilibria while introducing a common application of spectrophotometry and can easily be completed within a standard four-hour laboratory period. It provides students with an opportunity to use advanced data analysis techniques like data smoothing and spectral deconvolution to…

  11. Titration of strong and weak acids by sequential injection analysis technique.

    PubMed

    Maskula, S; Nyman, J; Ivaska, A

    2000-05-31

    A sequential injection analysis (SIA) titration method has been developed for acid-base titrations. Strong and weak acids in different concentration ranges have been titrated with a strong base. The method is based on sequential aspiration of an acidic sample zone and only one zone of the base into a carrier stream of distilled water. On their way to the detector, the sample and the reagent zones are partially mixed due to the dispersion and thereby the base is partially neutralised by the acid. The base zone contains the indicator. An LED-spectrophotometer is used as detector. It senses the colour of the unneutralised base and the signal is recorded as a typical SIA peak. The peak area of the unreacted base was found to be proportional to the logarithm of the acid concentration. Calibration curves with good linearity were obtained for a strong acid in the concentration ranges of 10(-4)-10(-2) and 0.1-3 M. Automatic sample dilution was implemented when sulphuric acid at concentration of 6-13 M was titrated. For a weak acid, i.e. acetic acid, a linear calibration curve was obtained in the range of 3x10(-4)-8x10(-2) M. By changing the volumes of the injected sample and the reagent, different acids as well as different concentration ranges of the acids can be titrated without any other adjustments in the SIA manifold or the titration protocol. PMID:18967966

  12. A photoluminescence study of plasma reactive ion etching-induced damage in GaN

    NASA Astrophysics Data System (ADS)

    Mouffak, Z.; Bensaoula, A.; Trombetta, L.

    2014-11-01

    GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D—A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D—A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D—A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.

  13. Investigation of the breakthrough point of ion track etching by capacitometry

    NASA Astrophysics Data System (ADS)

    Chen, J.; Fink, D.; Dhamodaran, S.

    2007-01-01

    Nanoscale size definition and flexible device structures are presently among the most ambitious development goals in the semiconductor field. One approach to attain these goals is based on the use of hybrid structures, combining the flexible etched ion track templates as substrates with the device functions of filled inorganic semiconductor. It is a critical issue to determine precisely the moment of breakthrough in order to use the etched ion track templates to fabricate vertical nano electronic device. This study tries to shed some light upon these processes by means of a novel approach, the so-called capacitometry measurement for investigating the breakthrough moment and etching processes. It is shown that the capacitometry is a simple but quite reliable technique to determine precisely the moment of track etching breakthrough.

  14. Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch

    DOEpatents

    Morales, Alfredo M.; Gonzales, Marcela

    2004-06-15

    The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

  15. Anisotropic dry etching of submicron W features using a Ti mask

    NASA Astrophysics Data System (ADS)

    Fullowan, T. R.; Pearton, S. J.; Ren, F.; Mahoney, G. E.; Kostelak, R. L.

    1992-12-01

    Anisotropic dry etching of tungsten features has been achieved in SF6- or CF4-based plasmas using a Ti overlayer as the etch mask. Features down to 0.5 mu m have been demonstrated using this simple and robust method. Undercutting of the W sidewall is inhibited while any Ti remains on the feature, and the anisotropic nature of this etching technique occurs over a wide pressure range (1-140 mTorr) and at low DC bias (-100 V). The latter minimizes ion-induced damage to the underlying semiconductor. The Ti mask can be readily removed in dilute HF. High-quality GaAs/AlGaAs heterojunction bipolar transistors have been fabricated using Ti as a mask for dry etching the W emitter contact.

  16. Hyaluronic acid/chondroitin sulfate-based hydrogel prepared by gamma irradiation technique.

    PubMed

    Zhao, Linlin; Gwon, Hui-Jeong; Lim, Youn-Mook; Nho, Young-Chang; Kim, So Yeon

    2014-02-15

    Gamma-ray irradiation of novel hydrogels was used to develop a biocompatible hydrogel system for skin tissue engineering. These novel hydrogels are composed of natural polymers including hyaluronic acid (HA) and chondroitin sulfate (CS), and the synthetic polymer, poly(vinyl alcohol) (PVA). The γ-ray irradiation method has advantages, such as relatively simple manipulation without need of any extra reagents for polymerization and cross-linking. We synthesized HA and CS derivatives with polymerizable residues. The HA/CS/PVA hydrogels with various compositions were prepared by using γ-ray irradiation technique and their physicochemical properties were investigated to evaluate the feasibility of their use as artificial skin substitutes. HA/CS/PVA hydrogels showed an 85-88% degree of gelation under 15 kGy radiation. All HA/CS/PVA hydrogels exhibited more than 90% water content and reached an equilibrium swelling state within 24h. Hydrogels with higher concentrations of hyaluronidase solution and HA/CS content had proportionally higher enzymatic degradation rates. The drug release behaviors from HA/CS/PVA hydrogels were influenced by the composition of the hydrogel and drug properties. Exposure of human keratinocyte (HaCaT) culture to the extracts of HA/CS/PVA hydrogels did not significantly affect the cell viability. All HaCaT cell cultures exposed to the extracts of HA/CS/PVA hydrogels exhibited greater than 92% cell viability. The HaCaT growth in HA/CS/PVA hydrogels gradually increased as a function of culture time. After 7 days, the HaCaT cells in all HA/CA/PVA hydrogels exhibited more than 80% viability compared to the control group HaCaT culture on a culture plate. PMID:24507324

  17. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  18. Selective emitter using a screen printed etch barrier in crystalline silicon solar cell

    PubMed Central

    2012-01-01

    The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO3 (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 1021 cm−3 in the low sheet resistance (Rs) region and 7 × 1019 cm−3 in the high Rs region. Solar cells of 12.5 × 12.5 cm2 in dimensions with a wet etch back selective emitter Jsc of 37 mAcm−2, open circuit voltage (Voc) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on Voc compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with Jsc of 36.90 mAcm−2, Voc of 625.7 mV, and efficiency of 17.60%. PMID:22823978

  19. Sensitivity Enhancement of RF Plasma Etch Endpoint Detection With K-means Cluster Analysis

    NASA Astrophysics Data System (ADS)

    Lee, Honyoung; Jang, Haegyu; Lee, Hak-Seung; Chae, Heeyeop

    2015-09-01

    Plasma etching process is the core process in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist, dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0% oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD. Plasma Etch, EPD, K-means Cluster Analysis.

  20. Micromachining technologies for capillary electrophoresis utilizing Pyrex glass etching and bonding

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Gong, Thomas Haiqing

    2000-08-01

    This paper presents the results about glass wet-etching and glass-to-glass bonding research for micro Capillary Electrophoresis and some other bio MEMS applications. Common glass and Pyrex glass had been chosen for the etching experiments with the HF-based series of etchants. Using negative photoresist, Shipley, together with the Au/Cr composite films as the masks, the etching rate of the glass in different concentration etchants had been investigated. Very fast etching rate, approximately 0.8micrometers /min, can be obtained. The mask we developed can stand more than 2 hours HF etching and very good glass surface had been obtained. The experimental results also had shown that there exist a big difference in etching rate between the common and Pyrex glass. Using anodic-like bonding skill, glass-to-glass mates with large area are realized with PECVD amorphous-Si as the intermediate layer. Micro Capillary Electrophoresis system had been developed by this technique and the test is still in progress. All these techniques also can be employed bio- MEMS chip in the future.

  1. Apparatus for the study of silicon film deposition and silicon etching

    NASA Astrophysics Data System (ADS)

    Benziger, Jay

    1987-07-01

    A special vacuum system used to study the surface reactions in thin film deposition and etching was equipped with surface analytical techniques and ion sputtering for preparing and characterizing surfaces. X-ray and ultraviolet photoelectron spectroscopy systems were obtained from Vacuum Science Workshop and installed in a 2-chamber vacuum system along with an ion sputtering gun for sample cleaning. These techniques will be used in conjunction with infrared ellipsometry and modulated molecular beam techniques to elucidate the kinetics and mechanisms of surface reactions of silicon deposition and etching.

  2. Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas

    NASA Astrophysics Data System (ADS)

    Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu

    2014-01-01

    The etching-limiting step in slow Si etching with HCl/H2 at atmospheric pressure was investigated. The etching was performed at a low etching rate below 10 nm/min in the temperature range of 1000-1100 °C. In the case of bare Si etching, it was confirmed that the etching rate showed little temperature dependence and was proportional to the equilibrium pressure of the etching by-product SiCl2 calculated by thermochemical analysis. In addition, the etching rates of Si(100) and (110) faces were almost the same. These results indicate that SiCl2 diffusion in the gas phase is the rate-limiting step. In the etching of the Si surface with SiO2 mask patterns, a strong loading effect (mask/opening pattern dependence of the etching rate) was observed. The simulation of the diffusion of gas species immediately above the Si surface revealed that the loading effect was attributed to the pattern-dependent diffusion of SiCl2.

  3. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  4. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  5. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  6. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  7. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  8. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    SciTech Connect

    Hansen, T. A. R.; Weber, J. W.; Colsters, P. G. J.; Mestrom, D. M. H. G.; Sanden, M. C. M. van de; Engeln, R.

    2012-07-01

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  9. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  10. Dry Etching of Organic Low Dielectric Constant Film without Etch Stop Layer

    NASA Astrophysics Data System (ADS)

    Mizumura, Michinobu; Fukuyama, Ryouji; Oomoto, Yutaka

    2002-04-01

    We investigated the trade-off between the increase of etch rate and the control of subtrenching in H2/N2 etching of a SiLK film (SiLK is a trademark of The Dow Chemical Company) without an etch stop layer for a Cu/low-k dual damascene structure. Based on our results, it is clear that the re-incident distribution of the reaction product influenced the mechanism of subtrenching strongly. As H etchant had the ability to remove the reaction product efficiently, we have successfully obtained good etching performance (an average etch rate of 128 nm/min, no subtrenching, and an etch rate uniformity of 8.9% within a 200 mm wafer) using an H2 high-flow-rate process in order to increase the amount of H etchant.

  11. Complementary use of flow and sedimentation field-flow fractionation techniques for size characterizing biodegradable poly(lactic acid) nanospheres

    PubMed Central

    Contado, Catia; Dalpiaz, Alessandro; Leo, Eliana; Zborowski, Maciej; Williams, P. Stephen

    2009-01-01

    Poly(lactic acid) nanoparticles were synthesized using a modified evaporation method, testing two different surfactants (sodium cholate and Pluronic F68) for the process. During their formulation the prodrug 5′-octanoyl-CPA (Oct-CPA) of the antiischemic N6-cyclopentyladenosine (CPA) was encapsulated. Three different purification methods were compared with respect to the influence of surfactant on the size characteristics of the final nanoparticle product. Flow and sedimentation field-flow fractionation techniques (FlFFF and SdFFF, respectively) were used to size characterize the five poly(lactic acid) particle samples. Two different combinations of carrier solution (mobile phase) were employed in the FlFFF analyses, while a solution of poly(vinyl alcohol) was used as mobile phase for the SdFFF runs. The separation performances of the two techniques were compared and the particle size distributions, derived from the fractograms, were interpreted with the support of observations by scanning electron microscopy. Some critical aspects, such as the carrier choice and the channel thickness determination for the FlFFF, have been investigated. This is the first comprehensive comparison of the two FFF techniques for characterizing non standard particulate materials. The two FFF techniques proved to be complementary and gave good, congruent and very useful information on the size distributions of the five poly(lactic acid) particle samples. PMID:17482199

  12. [Fatty acid variation in yellowfin tuna, spotted weakfish and Florida pompano when submitted to six cooking techniques].

    PubMed

    Castro-González, María Isabel; Maafs-Rodríguez, Ana Gabriela; Romo Pérez-Gil, Fernando

    2013-03-01

    The aim of the present study was to analyze the effect of six cooking techniques (steamed, foiled, foiled with banana leaf, baked, microwave-cooked and light frying) in the fatty acid content of Thunnus albacore (yellowfin tuna), Cynoscionnebulosus (spotted weakfish) and Trachinotuscarolinus (Florida pompano). After cooking the fish fillets, fatty acid analyses were performed using gas chromatography. Total lipids increased in all cooking techniques in tunaand spotted weakfish. Saturated fatty acids of tuna and spotted weakfish increased in three cooking techniques, while in Florida pompano only gas oven raised their content. Lightly frying generated the highest content of n-3 in tuna and spotted weakfish, and the lowest in Florida pompano, specie that presented less variation. In tuna fish, the most recommended cooking techniques are foiled with aluminum and microwave oven; for spotted weakfish, foiled with banana leaf; while Florida pompano can be prepared using all cooking methods except gas oven. This information is useful to enrich data from chemical composition tables, in which concentrations are usually presented in raw food. PMID:24167961

  13. Choice of solvent extraction technique affects fatty acid composition of pistachio (Pistacia vera L.) oil.

    PubMed

    Abdolshahi, Anna; Majd, Mojtaba Heydari; Rad, Javad Sharifi; Taheri, Mehrdad; Shabani, Aliakbar; Teixeira da Silva, Jaime A

    2015-04-01

    Pistachio (Pistacia vera L.) oil has important nutritional and therapeutic properties because of its high concentration of essential fatty acids. The extraction method used to obtain natural compounds from raw material is critical for product quality, in particular to protect nutritional value. This study compared the fatty acid composition of pistachio oil extracted by two conventional procedures, Soxhlet extraction and maceration, analyzed by a gas chromatography-flame ionization detector (GC-FID). Four solvents with different polarities were tested: n-hexane (Hx), dichloromethane (DCM), ethyl acetate (EtAc) and ethanol (EtOH). The highest unsaturated fatty acid content (88.493 %) was obtained by Soxhlet extraction with EtAc. The Soxhlet method extracted the most oleic and linolenic acids (51.99 % and 0.385 %, respectively) although a higher concentration (36.32 %) of linoleic acid was extracted by maceration. PMID:25829628

  14. Mechanism of cinnamic acid-induced trypsin inhibition: A multi-technique approach

    NASA Astrophysics Data System (ADS)

    Zhang, Hongmei; Zhou, Qiuhua; Cao, Jian; Wang, Yanqing

    2013-12-01

    In order to investigate the association of the protease trypsin with cinnamic acid, the interaction was characterized by using fluorescence, UV-vis absorption spectroscopy, molecular modeling and an enzymatic inhibition assay. The binding process may be outlined as follows: cinnamic acid can interact with trypsin with one binding site to form cinnamic acid-trypsin complex, resulting in inhibition of trypsin activity; the spectroscopic data show that the interaction is a spontaneous process with the estimated enthalpy and entropy changes being -8.95 kJ mol-1 and 50.70 J mol-1 K-1, respectively. Noncovalent interactions make the main contribution to stabilize the trypsin-cinnamic acid complex; cinnamic acid can enter into the primary substrate-binding pocket and alter the environment around Trp and Tyr residues.

  15. A Rapid Technique for the Estimation of Polynucleotide Adenylyltransferase and Ribonucleic Acid Polymerase in Plant Tissues 1

    PubMed Central

    Walter, Trevor J.; Mans, Rusty J.

    1975-01-01

    Nucleic acid-dependent polynucleotide adenylytransferase (EC 2.7.7.19) and ribonucleic acid polymerase (EC 2.7.7.6) have been partially purified from maize tissues (Zea mays L.) utilizing ammonium sulfate precipitation and batch diethylaminoethylcellulose chromatography. The technique is applicable to the simultaneous processing of up to eight samples of plant tissue and affords a rapid and reproducible means of assaying these two enzymes from small quantities of kernels or seedlings. The kinetic characteristics of the partially purified enzymes resemble those from more extensively purified preparations. PMID:16659402

  16. Back-etch method for plan view transmission electron microscopy sample preparation of optically opaque films.

    PubMed

    Yao, Bo; Coffey, Kevin R

    2008-04-01

    Back-etch methods have been widely used to prepare plan view transmission electron microscopy (TEM) samples of thin films on membranes by removal of the Si substrate below the membrane by backside etching. The conventional means to determine when to stop the etch process is to observe the color of the light transmitted through the sample, which is sensitive to the remaining Si thickness. However, most metallic films thicker than 75 nm are opaque, and there is no detectable color change prior to film perforation. In this paper, a back-etch method based on the observation of an abrupt change of optical reflection contrast is introduced as a means to determine the etch endpoint to prepare TEM samples for these films. As the acid etchant removes the Si substrate material a rough interface is generated. This interface becomes a relatively smooth and featureless region when the etchant reaches the membrane (film/SiO2). This featureless region is caused by the mirror reflection of the film plane (film/SiO2 interface) through the optically transparent SiO2 layer. The lower etch rate of SiO2 (compared with Si) gives the operator enough time to stop the etching without perforating the film. A clear view of the morphology and control of Si roughness during etching are critical to this method, which are discussed in detail. The procedures of mounting wax removal and sample rinsing are also described in detail, as during these steps damage to the membrane may easily occur without appropriate consideration. As examples, the preparation of 100-nm-thick Fe-based amorphous alloy thin film and 160-nm-thick Cu-thin film samples for TEM imaging is described. PMID:18227137

  17. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  18. Overview of atomic layer etching in the semiconductor industry

    SciTech Connect

    Kanarik, Keren J. Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  19. Selective reactive ion etching of TiW

    SciTech Connect

    Schaible, P.M.; Schwartz, G.C.

    1985-03-01

    TiW is used as a barrier to interdiffusion between aluminum or aluminum copper thin films (used as interconnections in integrated circuits) and silicon or PtSi contacts, thereby preventing junction short circuits. One method of defining VLSI interconnection patterns is by a lift-off technique. A stencil is defined, and after evaporation, the unwanted metal is removed with the stencil, leaving the interconnection metallization. However, TiW is most practically deposited by sputtering, which is not compatible with this method. If TiW were sputtered through a lift-off mask, the pattern would have sloped walls, and coverage of the walls of the lift-off stencil is a potential problem. A more practical process for the formation of patterns in TiW is subtractive etching, following lift-off formation of the aluminum or aluminum copper on top of a blanket layer of TiW. To insure the absence of undercutting, reactive ion etching (RIE) is used to etch the TiW.

  20. Scatterometry measurements for process monitoring of polysilicon gate etch

    NASA Astrophysics Data System (ADS)

    Bushman, Scott; Farrer, Steve

    1997-08-01

    This paper presents results from a prototype scatterometer which show that distinctly different zeroth-order diffraction signatures are produced for wafers processed under different etch conditions. We present comparisons between the profiles estimated using the scatterometer signatures and those measured using atomic force microscopy, in-line scanning electron microscopy, and cross-sectional scanning electron microscopy. We found that all the metrology techniques investigated provided useful information about the profile characteristics, but only the atomic force microscope and the scatterometer are suitable as in-line measurements of critical dimension profiles -- and only scatterometry provides estimates of the underlying film structure. In this study, the wafers consisted of patterned photoresist over blanket layers of a deep-ultravoilet anti-reflection coating, polysilicon, and silicon dioxide. These wafers were intentionally varied at the lithography step and intentionally misprocessed at the gate etch step to produce a wide range of process variation. Scatterometry measurements were made on multiple dies per wafer and estimates of feature profile information such as film thickness and critical dimension were generated by comparing the experimental signature to a library of theoretical solutions. We found that the scatterometer was capable of showing signal differences for different wafer processing conditions, and can be used as an in-line measurement of profile characteristics suitable for closed- loop process control of lithographic and etch processes.

  1. Method for anisotropic etching in the manufacture of semiconductor devices

    DOEpatents

    Koontz, Steven L.; Cross, Jon B.

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

  2. Method for anisotropic etching in the manufacture of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

  3. Enhancement of RIE: etched Diffractive Optical Elements surfaces by using Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Schmitt, J.; Bischoff, Ch.; Rädel, U.; Grau, M.; Wallrabe, U.; Völklein, F.

    2015-09-01

    Shaping of laser light intensities by using Diffractive Optical Elements allows the adaption of the incident light to its application. Fused silica is used where for example UV-light or high temperatures are mandatory. For high diffraction efficiency the quality of the etched surface areas is important. The investigation of different process parameters for Ion Beam and Reactive Ion Etching reveals that only Ion Beam Etching provides surfaces with optical quality. Measurements of the influence of the surface quality on the diffraction efficiencies prove that the surfaces generated by Reactive Ion Etching are not suitable. Due to the high selectivity of the process Reactive Ion Etching is nevertheless a reasonable choice for the fabrication of Diffractive Optical Elements. To improve the quality of the etched surfaces a post processing with Ion Beam Etching is developed. Simulations in MATLAB display that the angle dependent removal of the surface during the Ion Beam Etching causes a smoothing of the surface roughness. The positive influence of a post processing on the diffraction efficiency is outlined by measurements. The ion beam post processing leads to an increase of the etching depth. For the fabrication of high efficient Diffractive Optical Elements this has to be taken into account. The relation is investigated and transferred to the fabrication of four-level gratings. Diffraction efficiencies up to 78 % instead of the ideal 81 % underline the practicability of the developed post processing.

  4. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

    NASA Astrophysics Data System (ADS)

    Qiu, Rongfu; Lu, Hai; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2011-01-01

    Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.

  5. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  6. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  7. Correlation between grain orientation and the shade of color etching

    SciTech Connect

    Szabo, Peter J.; Kardos, I.

    2010-08-15

    Color etching is an extremely effective metallographic technique not only for making grains well visible, but also for making them distinguishable for automated image analyzers. During color etching, a thin film is formed on the surface of the specimen. The thickness of this layer is in the order of magnitude of the visible light and since both the metal-film boundary and the film surface reflect light, an interference occurs. A wavelength-component of the white line is eliminated and its complementary color will be seen on the surface. As the thickness changes, the colors also change grain by grain. The thickness of the film is dependent on several factors, mostly on the type of the phase. However, different color shades can be observed on the surfaces of single phase materials, which phenomenon is caused by the different crystallographic orientations of the grains. This paper shows a combined color etching electron backscatter diffraction (EBSD) investigation of cast iron. An area of the surface of a gray cast iron specimen was etched. Colors were characterized by their luminescence and their red, green and blue intensity. An EBSD orientation map was taken from the same area and the orientations of the individual grains were determined. Results showed that a strong correlation was found between the luminescence and the R, G, B intensity of the color and the angle between the specimen normal and the < 100> direction, while such correlation was not observed between the color parameters and the < 110 > and < 111> directions, respectively. This indicates that film thickness is sensitive to the < 100> direction of the crystal.

  8. Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

    NASA Astrophysics Data System (ADS)

    Al'zhanova, A.; Dauletbekova, A.; Komarov, F.; Vlasukova, L.; Yuvchenko, V.; Akilbekov, A.; Zdorovets, M.

    2016-05-01

    The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38 MeV), 84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.

  9. Etching studies on lutetium yttrium orthosilicate LuxY2-xSiO5:Ce (LYSO) scintillator crystals

    NASA Astrophysics Data System (ADS)

    Péter, Á.; Berze, N.; Lengyel, K.; Lörincz, E.

    2010-11-01

    Surface dissolution has been investigated on {100}, {010}, {001}, {110} and {101} oriented Lu1.6Y0.4SiO5:Ce crystal samples by using orthophosphoric acid up to 180°C. Depending on the etching temperature and surface orientation smooth or bunched surfaces were produced. In order to study the effect of the etching process on the scintillation properties temperature dependent optical absorption measurements were carried out up to 236°C. It was found that depending on the post-growth history of the sample, etching may influence the scintillation mechanism by modifying the concentration of shallow traps.

  10. Chemically Etched Open Tubular and Monolithic Emitters for Nanoelectrospray Ionization Mass Spectrometry

    SciTech Connect

    Kelly, Ryan T.; Page, Jason S.; Luo, Quanzhou; Moore, Ronald J.; Orton, Daniel J.; Tang, Keqi; Smith, Richard D.

    2006-11-15

    We have developed a new procedure for fabricating fused silica emitters for electrospray ionization-mass spectrometry (ESI-MS) in which the end of a bare fused silica capillary is immersed into aqueous hydrofluoric acid, and water is pumped through the capillary to prevent etching of the interior. Surface tension causes the etchant to climb the capillary exterior, and the etch rate in the resulting meniscus decreases as a function of distance from the bulk solution. Etching continues until the silica touching the hydrofluoric acid reservoir is completely removed, essentially stopping the etch process. The resulting emitters have no internal taper, making them much less prone to clogging compared to e.g. pulled emitters. The high aspect ratios and extremely thin walls at the orifice facilitate very low flow rate operation; stable ESI-MS signals were obtained for model analytes from 5-μm-diameter emitters at a flow rate of 5 nL/min with a high degree of inter-emitter reproducibility. In extensive evaluation, the etched emitters were found to enable approximately four times as many LC-MS analyses of proteomic samples before failing compared with conventional pulled emitters. The fabrication procedure was also employed to taper the ends of polymer monolith-containing silica capillaries for use as ESI emitters. In contrast to previous work, the monolithic material protrudes beyond the fused silica capillaries, improving the monolith-assisted electrospray process.

  11. New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.; Beheim, Glenn M.

    2005-01-01

    Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

  12. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    NASA Astrophysics Data System (ADS)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  13. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  14. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  15. New Insights into Amino Acid Preservation in the Early Oceans using Modern Analytical Techniques

    NASA Astrophysics Data System (ADS)

    Parker, E. T.; Brinton, K. L.; Burton, A. S.; Glavin, D. P.; Dworkin, J. P.; Bada, J.

    2015-12-01

    Protein- and non-protein-amino acids likely occupied the oceans at the time of the origin and evolution of life. Primordial soup-, hydrothermal vent-, and meteoritic-processes likely contributed to this early chemical inventory. Prebiotic synthesis and carbonaceous meteorite studies suggest that non-protein amino acids were likely more abundant than their protein-counterparts. Amino acid preservation before abiotic and biotic destruction is key to biomarker availability in paleoenvironments and remains an important uncertainty. To constrain primitive amino acid lifetimes, a 1992 archived seawater/beach sand mixture was spiked with D,L-alanine, D,L-valine (Val), α-aminoisobutyric acid (α-AIB), D,L-isovaline (Iva), and glycine (Gly). Analysis by high performance liquid chromatography with fluorescence detection (HPLC-FD) showed that only D-Val and non-protein amino acids were abundant after 2250 days. The mixture was re-analyzed in 2012 using HPLC-FD and a triple quadrupole mass spectrometer (QqQ-MS). The analytical results 20 years after the inception of the experiment were strikingly similar to those after 2250 days. To confirm that viable microorganisms were still present, the mixture was re-spiked with Gly in 2012. Aliquots were collected immediately after spiking, and at 5- and 9-month intervals thereafter. Final HPLC-FD/QqQ-MS analyses were performed in 2014. The 2014 analyses revealed that only α-AIB, D,L-Iva, and D-Val remained abundant. The disappearance of Gly indicated that microorganisms still lived in the mixture and were capable of consuming protein amino acids. These findings demonstrate that non-protein amino acids are minimally impacted by biological degradation and thus have very long lifetimes under these conditions. Primitive non-protein amino acids from terrestrial synthesis, or meteorite in-fall, likely experienced greater preservation than protein amino acids in paleo-oceanic environments. Such robust molecules may have reached a steady

  16. New Insights into Amino Acid Preservation in the Early Oceans Using Modern Analytical Techniques

    NASA Technical Reports Server (NTRS)

    Parker, Eric T.; Brinton, Karen L.; Burton, Aaron S.; Glavin, Daniel P.; Dworkin, Jason P.; Bada, Jeffrey L.

    2015-01-01

    Protein- and non-protein-amino acids likely occupied the oceans at the time of the origin and evolution of life. Primordial soup-, hydrothermal vent-, and meteoritic-processes likely contributed to this early chemical inventory. Prebiotic synthesis and carbonaceous meteorite studies suggest that non-protein amino acids were likely more abundant than their protein-counterparts. Amino acid preservation before abiotic and biotic destruction is key to biomarker availability in paleoenvironments and remains an important uncertainty. To constrain primitive amino acid lifetimes, a 1992 archived seawater/beach sand mixture was spiked with D,L-alanine, D,L-valine (Val), alpha-aminoisobutyric acid (alpha-AIB), D,L-isovaline (Iva), and glycine (Gly). Analysis by high performance liquid chromatography with fluorescence detection (HPLC-FD) showed that only D-Val and non-protein amino acids were abundant after 2250 days. The mixture was re-analyzed in 2012 using HPLC-FD and a triple quadrupole mass spectrometer (QqQ-MS). The analytical results 20 years after the inception of the experiment were strikingly similar to those after 2250 days. To confirm that viable microorganisms were still present, the mixture was re-spiked with Gly in 2012. Aliquots were collected immediately after spiking, and at 5- and 9-month intervals thereafter. Final HPLC-FD/QqQ-MS analyses were performed in 2014. The 2014 analyses revealed that only alpha-AIB, D,L-Iva, and D-Val remained abundant. The disappearance of Gly indicated that microorganisms still lived in the mixture and were capable of consuming protein amino acids. These findings demonstrate that non-protein amino acids are minimally impacted by biological degradation and thus have very long lifetimes under these conditions. Primitive non-protein amino acids from terrestrial synthesis, or meteorite in-fall, likely experienced great-er preservation than protein amino acids in paleo-oceanic environments. Such robust molecules may have reached a

  17. The development of a method of producing etch resistant wax patterns on solar cells

    NASA Technical Reports Server (NTRS)

    Pastirik, E.

    1980-01-01

    A potentially attractive technique for wax masking of solar cells prior to etching processes was studied. This technique made use of a reuseable wax composition which was applied to the solar cell in patterned form by means of a letterpress printing method. After standard wet etching was performed, wax removal by means of hot water was investigated. Application of the letterpress wax printing process to silicon was met with a number of difficulties. The most serious shortcoming of the process was its inability to produce consistently well-defined printed patterns on the hard silicon cell surface.

  18. Note: Mechanical etching of atomic force microscope tip and microsphere attachment for thermal radiation scattering enhancement

    NASA Astrophysics Data System (ADS)

    Brissinger, D.; Parent, G.; Lacroix, D.

    2013-12-01

    This Note describes a mechanical etching technique which can be used to prepare silicon tips used in atomic force microscopy apparatus. For such devices, dedicated tips with specific shapes are now commonly used to probe surfaces. Yet, the control of the tip morphology where characteristic scales are lower than 1 μm remains a real challenge. Here, we detail a controlled etching process of AFM probes apex allowing micrometer-sized sphere attachment. The technique used and influent parameters are discussed and SEM images of the achieved tips are given. Deceptive problems and drawbacks that might occur during the process are also covered.

  19. Plasma etching of chromium films in the fabrication of photomasks

    NASA Astrophysics Data System (ADS)

    Coleman, Thomas P.; Buck, Peter D.

    1995-12-01

    To meet the advanced CD uniformity and resolution requirements of state-of-the-art maskmaking, dry chrome etch processing may be required. Dry etching is a more anisotropic process, significantly reducing etch undercut. The absence of undercutting allows the lithographer to image the resist at the iso-focal point, eliminating the need to underexpose to maintain CDs. Also, dry etch parameters can be precisely controlled via a microprocessor- controlled etch system with a highly accurate parameter-metering system that ensures greater process control. Using design-of-experiment methodologies, a chrome plasma etch process (using OCG-895i) was developed. This work proves the feasibility of plasma etching chromium patterns on photomasks. The results show an etch that has excellent uniformity, is anisotropic, and has excellent edge quality. Also, resist selectivity is high for the etching of thin chrome films. SEM results show a significant reduction in the bias needed to achieve nominal CDs. As with many dry etch processes, loading and microloading effects (i.e., localized pattern density effect on etch rates) are a concern. Initial investigations of loading and microloading effects were conducted. Results suggest that due to the high anisotropy of the etch, microloading is not an issue. However, plate loading (or the amount of chrome removed) increases etch times and can result in radial etch patterns. Loading effects must be minimized or eliminated to optimize etch uniformity.

  20. Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride

    NASA Astrophysics Data System (ADS)

    Codato, S.; Campi, R.; Rigo, C.; Stano, A.

    2005-08-01

    In this work, we present studies on the in situ etching (ISE) technique using tertiarybutylchloride (TBCl) as etchant precursor in a metal organic vapour phase epitaxy (MOVPE) reactor. Experiments were made in PH 3 and PH 3-free environments at low pressures (50-100 mbar) and in a low-temperature regime (545-600 °C). In particular, the combination of standard reactive ion etching (RIE) and ISE for the realization of suitable mesa structures for device applications has been systematically investigated. In our etching experiments InP, InGaAsP and Al-containing multi quantum wells (MQWs) have been used as etching targets. Particular efforts were devoted to the etching of Al-containing structures. For this material, the addition of trimethylgallium (TMGa) during the etching resulted to be of key importance in providing good surface morphology and etching of the MQW structure. The role of Ga species in the etching mechanisms will be discussed. The dependence of surface morphology and mesa shape on etching conditions, in particular, temperature, chlorine concentration, gallium concentration and etching time, will be described.

  1. Ileal mucosal absorption of bile acid in man: validation of a miniature flux chamber technique.

    PubMed Central

    Hosie, K B; Davie, R J; Panagamuwa, B; Grobler, S; Keighley, M R; Birch, N J

    1992-01-01

    A method that allows the quantitative assessment of ileal mucosal cell uptake and transport of bile acids in mucosal biopsy specimens has been validated. Viability of the tissue was confirmed by maintenance of normal cell morphology, wet weight, extracellular space, porosity to polyethylene glycol-900, lactate dehydrogenase release, and transmucosal potential difference. Using 14C-taurocholic acid, absorption was shown to be directional, capable of working against a concentration gradient, reduced by metabolic inhibitors, and sodium dependent. The system showed saturation kinetics with an estimated Km of 10 mumol/l. At a standard substrate concentration of 10 mumol/l ileal mucosal bile acid absorption was compared in patients with colorectal cancer (n = 6), ulcerative colitis (n = 10), and slow transit constipation (n = 8). There was no significant difference in tissue uptake or transport between the three groups. Images Figure 2 PMID:1582593

  2. Zirconium-titanium phosphate acid catalysts synthesized by sol gel techniques

    SciTech Connect

    Jackson, N.B.; Thoma, S.G.; Kohler, S.; Nenoff, T.M.

    1998-03-01

    Recently a large effort has been put into identifying solid acid materials, particularly sulfated zirconia and other sulfated metal oxides, that can be used to replace environmentally hazardous liquid acids in industrial processes. The authors are studying a group of mixed metal phosphates, some of which have also been sulfated, for their catalytic and morphological characteristics. Zirconium and titanium are the metals used in this study and the catalysts are synthesized from alkoxide starting materials with H{sub 3}PO{sub 4}, H{sub 2}O, and sometimes H{sub 2}SO{sub 4} as gelling agents. The measurement of acidity was achieved by using the isomerization of 2-methyl-2-pentene as a model reaction. The phosphate stabilized the mixed metal sulfates, preventing them from calcining to oxides boosting their initial catalytic activity. The addition of sulfate prevented the formation of the catalytically inactive mixed metal pyrophosphates when calcined at high temperatures (> 773 K).

  3. Polymer etching in the oxygen afterglow - Increased etch rates with increased reactor loading

    NASA Technical Reports Server (NTRS)

    Lerner, N. R.; Wydeven, T.

    1989-01-01

    Reactor loading has an effect on the etch rate (rate of decrease of film thickness) of films of polyvinylfluoride (Tedlar) and polyethylene exposed in the afterglow of an RF discharge in oxygen. The etch rate is found to increase with the total surface area of the polymer exposed in the reactor. The etch rates of polypyromellitimide (Kapton H) and polystyrene under these conditions are very low. However, the etch rate of these polymers is greatly enhanced by adding either Tedlar or polyethylene to the reactor. A kinetic model is proposed based on the premise that the oxygen atoms produced by the RF discharge react with Tedlar or polyethylene to produce a much more reactive species, which dominates the etching of the polymers studied.

  4. Determination of nucleic acids at nanogram level using resonance light scattering technique with Congo Red

    NASA Astrophysics Data System (ADS)

    Wu, Xia; Wang, Yuebo; Wang, Minqin; Sun, Shuna; Yang, Jinghe; Luan, Yuxia

    2005-01-01

    Based on the enhancement of the resonance light scattering (RLS) of Congo Red (CR) by nucleic acid, a new quantitative method for nucleic acid is developed. In the Tris-HCl buffer (pH 10.5), the weak light scattering of CR is greatly enhanced by addition of nucleic acid and CTMAB, the maximum peak is at 560 nm and the enhanced intensity of RLS is in proportion to the concentration of nucleic acid. The linear range is 1.0×10 -9 to 1.0×10 -6 g ml -1, 7.5×10 -8 to 1.0×10 -6 g ml -1 and 7.5×10 -8 to 2.5×10 -6 g ml -1 for herring sperm DNA, calf thymus DNA and yeast RNA, and the detection limits are 0.019, 0.89 and 1.2 ng ml -1 ( S/ N = 3), respectively. Actual biological samples were satisfactorily determined.

  5. ANALYTICAL TECHNIQUES FOR MEASURING THE EFFECTS OF ACID DEPOSITION ON COATINGS ON WOOD

    EPA Science Inventory

    Preliminary experiments have been carried out to characterize the potential deleterious effects of acidic deposition on three representative paints: an oil alkyd paint and two acrylic latex formulations. The base polymer latex common to both latex paints was also studied individu...

  6. The Effects of Animation Technique on Teaching of Acids and Bases Topics

    ERIC Educational Resources Information Center

    Dasdemir, Ikramettin; Doymus, Kemal; Simsek, Ümit; Karaçöp, Ataman

    2008-01-01

    This study has been carried out in order to determine the effect of computer animations in teaching acid and base topics in science and technology courses on the academic success of the primary school students and the opinions of students related to teaching with the animations. This research was conducted by the participation of 55 students from…

  7. A relative humidity sensing probe based on etched thin-core fiber coated with polyvinyl alcohol

    NASA Astrophysics Data System (ADS)

    Sun, Hao; Yang, Zaihang; Zhou, Libin; Liu, Nan; Gang, Tingting; Qiao, Xueguang; Hu, Manli

    2015-12-01

    A relative humidity (RH) sensing probe based on etched thin-core fiber (TCF) coated with polyvinyl alcohol (PVA) is proposed and experimentally demonstrated.This sensor is constructed by splicing a section of TCF with a single mode fiber (SMF), then part of the TCF's cladding is etched by hydrofluoric acid solution and finally the tip of TCF is coated with PVA. Experimental results demonstrate that this sensor can measure the ambient RH by demodulating the power variation of reflection spectrum. The power demodulation method make this sensor can ignore the temperature cross-sensitivity and have an extensive application prospect.

  8. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  9. Process capability of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  10. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  11. Low radio frequency biased electron cyclotron resonance plasma etching

    NASA Astrophysics Data System (ADS)

    Samukawa, Seiji; Toyosato, Tomohiko; Wani, Etsuo

    1991-03-01

    A radio frequency (rf) biased electron cyclotron resonance (ECR) plasma etching technology has been developed to realize an efficient ion acceleration in high density and uniform ECR plasma for accurate Al-Si-Cu alloy film etching. In this technology, the substrate is located at the ECR position (875 G position) and the etching is carried out with a 400 kHz rf bias power. This Al-Si-Cu etching technology achieves a high etching rate (more than 5000 A/min), excellent etching uniformity (within ±5%), highly anisotropic etching, and Cu residue-free etching in only Cl2 gas plasma. These etching characteristics are accomplished by the combination of the dense and uniform ECR plasma generation at the ECR position with the efficient accelerated ion flux at the ECR position by using 400 kHz rf bias.

  12. Time-resolved transmission study of fused silica during laser-induced backside dry etching

    NASA Astrophysics Data System (ADS)

    Smausz, T.; Zalatnai, Z.; Papdi, B.; Csákó, T.; Bor, Zs.; Hopp, B.

    2009-03-01

    Laser-induced backside dry etching (LIBDE) is a promising technique for micro- and nanomachining of transparent materials. Although several experiments have already proved the suitability and effectiveness of the technique, there are several open questions concerning the etching mechanism and the concomitant processes. In this paper time-resolved light transmission investigations of etching process of fused silica are presented. 125 nm thick silver coating was irradiated through the carrying 1 mm thick fused silica plate by single pulses of a nanosecond KrF excimer laser. The applied fluences were 0.38, 0.71 and 1 J/cm 2. During the etching process the irradiated spots were illuminated by an electronically delayed nitrogen laser pumped dye laser. The delay between the pump and probe pulses was varied in the range of 0 ns and 20 μs. It was found that the transmitted probe beam intensity strongly depends on the applied delays and fluences. Scanning electron microscopy and energy dispersive X-ray spectrometry of the etched surface showed the existence of silver droplets and fragments on the illuminated surfaces and silver atoms built into the treated surface layer influencing the transmission behavior of the studied samples.

  13. Determination of ambroxol hydrochloride, methylparaben and benzoic acid in pharmaceutical preparations based on sequential injection technique coupled with monolithic column.

    PubMed

    Satínský, Dalibor; Huclová, Jitka; Ferreira, Raquel L C; Montenegro, Maria Conceição B S M; Solich, Petr

    2006-02-13

    The porous monolithic columns show high performance at relatively low pressure. The coupling of short monoliths with sequential injection technique (SIA) results in a new approach to implementation of separation step to non-separation low-pressure method. In this contribution, a new separation method for simultaneous determination of ambroxol, methylparaben and benzoic acid was developed based on a novel reversed-phase sequential injection chromatography (SIC) technique with UV detection. A Chromolith SpeedROD RP-18e, 50-4.6 mm column with 10 mm precolumn and a FIAlab 3000 system with a six-port selection valve and 5 ml syringe were used for sequential injection chromatographic separations in our study. The mobile phase used was acetonitrile-tetrahydrofuran-0.05M acetic acid (10:10:90, v/v/v), pH 3.75 adjusted with triethylamine, flow rate 0.48 mlmin(-1), UV-detection was at 245 nm. The analysis time was <11 min. A new SIC method was validated and compared with HPLC. The method was found to be useful for the routine analysis of the active compounds ambroxol and preservatives (methylparaben or benzoic acid) in various pharmaceutical syrups and drops. PMID:16165338

  14. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    PubMed

    Uşümez, Serdar; Orhan, Metin; Uşümez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful

  15. Electron and Light Microscopy Techniques Suitable for Studying Fatigue Damage in a Crystallized Glass Ceramic

    NASA Technical Reports Server (NTRS)

    Harrell, Shelley; Zaretsky, Erwin V.

    1961-01-01

    The crystals of Pyroceram are randomly oriented and highly reflective so that standard microscopy techniques are not satisfactory for studying this material. Standard replicating procedures proved difficult to use. New microscopy techniques and procedures have therefore been developed. A method for locating, orienting, and identifying specific areas to be viewed with an electron microscope is described. This method not require any special equipment. Plastic replicas were found to be unsatisfactory because of their tendency to adhere to Pryoceram. This caused them to tear when released or resulted in artifacts. Preshadowed silicon monoxide replicas were satisfactory but required a releasing agent. A method of depositing the releasing agent is described. To polish specimens without evidence of fire-polishing, it was found necessary to use a vibratory polishing technique. Chrome oxide was used as the abrasive and either water or kerosene as the lubricant. Vibratory polishing is extremely slow, but surfaces so polished show no evidence of fire polishing, even when examined by electron microscopy. The most satisfactory etching process used for Pyroceram 9608 consisted of a primary etch of 5 milliliters of hydrochloric acid (concentrated), 5 milliliters of hydrogen fluoride (45 percent), and 45 milliliters of water, and a secondary etch with methyl alcohol replacing the water. Best results were obtained with total etching times from 25 to 30 seconds. Staining of the Pyroceram surface with a Sanford's marker was found to be an expedient way to reduce the glare of reflected light.

  16. Anisotropic etching of monocrystalline silicon under subcritical conditions

    NASA Astrophysics Data System (ADS)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  17. A simple and highly sensitive assay of perfluorooctanoic acid based on resonance light scattering technique.

    PubMed

    Zhang, Fang; Zheng, Yonghong; Liang, Jiaman; Long, Sha; Chen, Xianping; Tan, Kejun

    2016-04-15

    A simple, highly sensitive resonance light scattering (RLS) method for the detection of perfluorooctanoic acid (PFOA) has been developed based on the interaction with crystal violet (CV). It was found that PFOA can form complexes with CV in acid medium resulting in remarkable enhancement of the RLS intensity of the system. And the enhanced RLS intensities are in proportion to the concentration of PFOA in the range of 0.1-25.0μmol/L (R(2)=0.9998), with a detection limit of 11.0nmol/L (S/N=3). In this work, the optimum reaction conditions and the interferences of foreign substances were investigated. The reaction mechanism between CV and PFOA was also studied by the absorption spectrum and scanning electron microscope (SEM). This method is successfully applied to the determination of PFOA in tap water and Jialing river water samples with RSD≤4.04%. PMID:26824483

  18. A simple and highly sensitive assay of perfluorooctanoic acid based on resonance light scattering technique

    NASA Astrophysics Data System (ADS)

    Zhang, Fang; Zheng, Yonghong; Liang, Jiaman; Long, Sha; Chen, Xianping; Tan, Kejun

    2016-04-01

    A simple, highly sensitive resonance light scattering (RLS) method for the detection of perfluorooctanoic acid (PFOA) has been developed based on the interaction with crystal violet (CV). It was found that PFOA can form complexes with CV in acid medium resulting in remarkable enhancement of the RLS intensity of the system. And the enhanced RLS intensities are in proportion to the concentration of PFOA in the range of 0.1-25.0 μmol/L (R2 = 0.9998), with a detection limit of 11.0 nmol/L (S/N = 3). In this work, the optimum reaction conditions and the interferences of foreign substances were investigated. The reaction mechanism between CV and PFOA was also studied by the absorption spectrum and scanning electron microscope (SEM). This method is successfully applied to the determination of PFOA in tap water and Jialing river water samples with RSD ≤ 4.04%.

  19. Determination of deoxyribonucleic acids by a resonance light scattering technique and its application

    NASA Astrophysics Data System (ADS)

    Jie, Nianqin; Jia, Guifang; Hou, Shicong; Xiong, Yanmei; Dong, Yanhong

    2003-12-01

    For the first time, acetamiprid has been used to determine nucleic acid (DNA) using the resonance light scattering (RLS). The RLS of acetamiprid was greatly enhanced by DNA in the range of pH 1.6-1.8. A RLS peak at 313 nm was found, and the enhanced intensity of RLS at this wavelength was proportional to the concentration of DNA. The linear range of the calibration curve was 0-11.0 μg ml -1 with the detection limit of 20 ng ml -1. The nucleic acids in synthetic sample and in rice seedling extraction were determined satisfactorily. The interaction mechanism of acetamiprid and DNA is discussed. Mechanism studies show that the enhanced RLS is due to the aggregation of acetamiprid in the presence of DNA.

  20. Effects of acids used in the microabrasion technique: Microhardness and confocal microscopy analysis

    PubMed Central

    Pini, Núbia-Inocencya-Pavesi; Ambrosano, Gláucia-Maria-Bovi; da Silva, Wander-José; Aguiar, Flávio-Henrique-Baggio; Lovadino, José-Roberto

    2015-01-01

    Background This study evaluated the effects of the acids used in the microabrasion on enamel. Material and Methods Seventy enamel/dentine blocks (25 mm2) of bovine incisors were divided into 7 groups (n=10). Experimental groups were treated by active/passive application of 35% H3PO4 (E1/E2) or 6.6% HCl (E3/E4). Control groups were treated by microabrasion with H3PO4+pumice (C5), HCl+silica (C6), or no treatment (C7). The superficial (SMH) and cross-sectional (CSMH; depths of 10, 25, 50, and 75 µm) microhardness of enamel were analyzed. Morphology was evaluated by confocal laser-scanning microscopy (CLSM). Data were analyzed by analysis of variance (Proc Mixed), Tukey, and Dunnet tests (α=5%). Results Active application (E1 and E3) resulted in higher microhardness than passive application (E2 and E4), with no difference between acids. For most groups, the CSMH decreased as the depth increased. All experimental groups and negative controls (C5 and C6) showed significantly reduced CSMH values compared to the control. A significantly higher mean CSMH result was obtained with the active application of H3PO4 (E1) compared to HCl (E3). Passive application did not result in CSMH differences between acids. CLSM revealed the conditioning pattern for each group. Conclusions Although the acids displayed an erosive action, use of microabrasive mixture led to less damage to the enamel layers. Key words:Enamel microabrasion, enamel microhardness, confocal laser scanning microscopy. PMID:26535098

  1. [Research on L-Ascorbic Acid and Thiamine Based on Wide-Band Terahertz Spectroscopy Technique].

    PubMed

    Li, Chun; Li, Miao; Jiang, Ling

    2015-03-01

    We employed terahertz time-domain spectra (THz-TDS) and Fourier transform infrared spectra (FTIR) to measure the terahertz spectroscopy of L-ascorbic acid and thiamine in the frequency region ranging from 0.10 to 3.50 THz. Molecular models of two vitamins have been shown, and based on above two spectroscopies, we compared the differences about the absorption spectra between the L-ascorbic acid and the thiamine. The measured results show that the absorption spectra obtained based on THz-TDS and FTIR are completely consistent in the frequency range of 0.70 to 3.00 THz. New fingerprint peaks obtained by the FTIR in the low frequency region from 0.30 to 0.50 THz in terms of high sensitive silicon bolometer detector, which are not found by the THz-TDS. Furthermore, several bands at 8.75, 8.85, 9.00, 9.30 and 10.30 THz, fingerprint peaks have been found in the frequency region from 8.00 to 12.00 THz for the thiamine sample obtained by the FTIR. Measurement results indicate the absorption spectra depend on the ratio of polyethylene powder mixed with the L-ascorbic acid. L-ascorbic acid has a lower absorption ability at THz band, so pure samples should be used for testing experiment. In addition, we calculated the refractive index for the two samples. This study has important implications for the discriminatory analysis of vitamins and the establishment of vitamin spectroscopy standard database. PMID:26117861

  2. Anion-exchange separation techniques with methanol-water solutions of hydrochloric and nitric acids.

    PubMed

    Morrow, R J

    1966-09-01

    Mixed methanol-water systems were shown to be of use in the analysis of samples containing 500-mg amounts of metallic impurities for rare earths and actinides. Detailed study of the hydrochloric acid-methanol system led to improved separation of einsteinium and californium from americium and curium as well as to lanthanideactinide separations. Comparisons of elution orders are also drawn between these systems and the corresponding lithium salt systems, with emphasis on ion-hydration theories. PMID:18960002

  3. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  4. Solderability enhancement of copper through chemical etching

    SciTech Connect

    Stevenson, J.O.; Guilinger, T.R.; Hosking, F.M.; Yost, F.G.; Sorensen, N.R.

    1995-05-01

    Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. The authors are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, the authors present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

  5. The surface reactivity of a magnesium-aluminium alloy in acidic fluoride solutions studied by electrochemical techniques and XPS

    NASA Astrophysics Data System (ADS)

    Verdier, S.; van der Laak, N.; Delalande, S.; Metson, J.; Dalard, F.

    2004-08-01

    The behaviour of the 6% Al magnesium alloy AM60 in aqueous acid fluoride solutions was studied in situ by electrochemical techniques and the surface chemistry of the resulting film was examined by monochromatized XPS. The evolution of the corrosion potential and cyclic voltammograms showed that the aggressiveness of the solutions is mainly driven by their fluoride concentration, the pH having almost no detectable influence. The more concentrated and acidic fluoride solutions led to a higher degree of fluoride coverage of the surface. The surface film is composed of magnesium hydroxide and hydroxyfluoride Mg(OH) 2- xF x which approaches MgF 2 with increasing fluoride concentration in the film. The parameters governing the film evolution and their relation to surface reactions are discussed.

  6. Use of Microfocused X-ray Techniques to Investigate the Mobilization of As by Oxalic Acid

    PubMed Central

    Wovkulich, Karen; Mailloux, Brian J.; Bostick, Benjamin C.; Dong, Hailiang; Bishop, Michael E.; Chillrud, Steven N.

    2012-01-01

    Improved linkages between aqueous phase transport and solid-phase reactions are needed to better predict and model transport of contaminants through the subsurface. Here we develop and apply a new method for measuring As mobilization in situ within soil columns that utilizes synchrotron-based X-ray fluorescence. By performing these measurements in situ during column transport experiments, we simultaneously monitor grain-scale solid phase reactions and column-scale transport. Arsenic may be effectively mobilized by oxalic acid but the geochemical and mineralogical factors that influence the rate and extent of mobilization are not well understood. Column experiments (~4 cm long × 0.635 cm ID) using As contaminated sediments from the Vineland Chemical Company Superfund site were performed on the laboratory bench as well as in the synchrotron beamline. Microfocused synchrotron X-ray fluorescence (μSXRF) maps for As and Fe were collected at the same location in the columns (<1 mm2) before and during treatment with 10 mM oxalic acid. The fraction of As and Fe removed by oxalic acid treatment was calculated from the change in flux-normalized counts for each pixel in the map images, and these data were used to calculate kinetic parameters over the studied area. Between 79% and 83% of the As was removed from the sediments by the oxalic acid treatment based on μSXRF data; these removal percentages agreed well with laboratory data based on column effluent (88–95%). Considerably less Fe was removed by oxalic acid treatment, 14–25% based on μSXRF counts, which is somewhat higher than the 7–9% calculated from laboratory column effluent concentrations. Microfocused X-ray absorption near edge spectroscopy (μXANES) on a subset of points indicates most of the Fe was oxidized and present as a mixture of goethite, hematite, and ferrihydrite on sand grain coatings. Treatment with oxalic acid led to subtle shifts in Fe (III) species following oxalic acid treatment, either

  7. Use of microfocused X-ray techniques to investigate the mobilization of arsenic by oxalic acid

    NASA Astrophysics Data System (ADS)

    Wovkulich, Karen; Mailloux, Brian J.; Bostick, Benjamin C.; Dong, Hailiang; Bishop, Michael E.; Chillrud, Steven N.

    2012-08-01

    Improved linkages between aqueous phase transport and solid-phase reactions are needed to better predict and model transport of contaminants through the subsurface. Here we develop and apply a new method for measuring As mobilization in situ within soil columns that utilizes synchrotron-based X-ray fluorescence. By performing these measurements in situ during column transport experiments, we simultaneously monitor grain-scale solid phase reactions and column-scale transport. Arsenic may be effectively mobilized by oxalic acid but the geochemical and mineralogical factors that influence the rate and extent of mobilization are not well understood. Column experiments (˜4 cm long × 0.635 cm ID) using As contaminated sediments from the Vineland Chemical Company Superfund site were performed on the laboratory bench as well as in the synchrotron beamline. Microfocused synchrotron X-ray fluorescence (μSXRF) maps for As and Fe were collected at the same location in the columns (<1 mm2) before and during treatment with 10 mM oxalic acid. The fraction of As and Fe removed by oxalic acid treatment was calculated from the change in flux-normalized counts for each pixel in the map images, and these data were used to calculate kinetic parameters over the studied area. Between 79% and 83% of the As was removed from the sediments by the oxalic acid treatment based on μSXRF data; these removal percentages agreed well with laboratory data based on column effluent (88-95%). Considerably less Fe was removed by oxalic acid treatment, 14-25% based on μSXRF counts, which is somewhat higher than the 7-9% calculated from laboratory column effluent concentrations. Microfocused X-ray absorption near edge spectroscopy (μXANES) on a subset of points indicates most of the Fe was oxidized and present as a mixture of goethite, hematite, and ferrihydrite on sand grain coatings. Treatment with oxalic acid led to subtle shifts in Fe (III) species following oxalic acid treatment, either removing

  8. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    NASA Astrophysics Data System (ADS)

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-02-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.

  9. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching.

    PubMed

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  10. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  11. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  12. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    NASA Astrophysics Data System (ADS)

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  13. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  14. Effect of ceramic etching protocols on resin bond strength to a feldspar ceramic.

    PubMed

    Bottino, M A; Snellaert, A; Bergoli, C D; Özcan, M; Bottino, M C; Valandro, L F

    2015-01-01

    This study sought to evaluate the resin microtensile bond strength (MTBS) stability of a leucite-reinforced ceramic after different ceramic etching protocols. The microtensile test had 40 ceramic blocks (5×5×6 mm) assigned to five groups (n=8), in accordance with the following surface etching protocols: NE nonetched (control); 9HF: hydrofluoric (HF) acid etching (9%HF)+wash/dry; 4HF: 4%HF+wash/dry; 5HF: 5%HF+wash/dry; and 5HF+N: 5%HF+neutralizer+wash/dry+ultrasonic-cleaning. Etched ceramic surfaces were treated with a silane agent. Next, resin cement blocks were built on the prepared ceramic surface and stored for 24 hours in distilled water at 37°C. The specimens were then sectioned to obtain microtensile beams (32/block), which were randomly assigned to the following conditions, nonaged (immediate test) and aged (water storage for 150 days plus 12,000 thermal cycles), before the microtensile test. Bond strength data were submitted to one-way analysis of variance and Tukey test (α=0.05). Additional ceramic samples were subjected to the different ceramic etching protocols and evaluated using a scanning electron microscope (n=2) and atomic force microscopy (n=2). Aging led to a statistically significant decrease in the MTBS for all groups, except the untreated one (NE). Among the groups submitted to the same aging conditions, the untreated (NE) revealed inferior MTBS values compared to the 9HF and 4HF groups. The 5HF and 5HF+N groups had intermediate mean values, being statistically similar to the higher values presented by the 9HF and 4HF groups and to the lower value associated with the NE group. The neutralization procedure did not enhance the ceramic/resin cement bond strength. HF acid etching is a crucial step in resin/ceramic bonding. PMID:25535782

  15. Exploring Jupiter's icy moons with old techniques and big facilities - new insights on sulfuric acid hydrates

    NASA Astrophysics Data System (ADS)

    Maynard-Casely, H. E.; Avdeev, M.; Brand, H.; Wallwork, K.

    2013-12-01

    Sulfuric acid hydrates have been proposed to be abundant on the surface of Europa [1], and hence would be important planetary forming materials for this moon and its companions Ganymede and Callisto. Understanding of the surface features and subsurface of these moons could be advanced by firmer knowledge of the icy materials that comprise them [2], insight into which can be drawn from firmer knowledge of physical properties and phase behaviour of the candidate materials. We wish to present results from a study that started with the question ';What form of sulfuric acid hydrate would form on the surface of Europa'. The intrinsic hydrogen-domination of planetary ices, makes studying these materials with laboratory powder diffraction very challenging. Insights into their crystalline phase behavior and the extraction of a number of thermal and mechanical properties is often only accessible with high-flux synchrotron x-ray diffraction and utilization of the large scattering cross section with neutron diffraction. We have used the Powder Diffraction beamline at Australian synchrotron [4] and the Echidna (High-resolution neutron powder diffraction) instrument of the Australian Nuclear Science and Technology Organization, [5] to obtain an number of new insights into the crystalline phases formed from sulfruic acid and water mixtures. These instruments have enabled the discovery a new water-rich sulfuric acid hydrate form [6], improved structural characterisation of existing forms [7] and a charting the phase diagram of this fundamental binary system [8]. This has revealed exciting potential for understanding more about the surface of Europa from space, perhaps even providing a window into its past. [1] Carlson, R.W., R.E. Johnson, and M.S. Anderson, Science, 1999. 286(5437): p. 97-99. [2] Fortes, A.D. and M. Choukroun. Space Sci Rev, 2010. 153(1-4): p. 185-218. [3] Blake, D., et al., Space Sci Rev,, 2012. 170(1-4): p. 341-399. [4] Wallwork, K.S., Kennedy B. J. and Wang, D

  16. Spectrophotometric techniques to determine tranexamic acid: Kinetic studies using ninhydrin and direct measuring using ferric chloride

    NASA Astrophysics Data System (ADS)

    Arayne, M. Saeed; Sultana, Najma; Siddiqui, Farhan Ahmed; Mirza, Agha Zeeshan; Zuberi, M. Hashim

    2008-11-01

    Two simple and sensitive spectrophotometric methods in ultraviolet and visible region are described for the determination of tranexamic acid in pure form and pharmaceutical preparations. The first method is based on the reaction of the drug with ninhydrin at boiling temperature and by measuring the increase in absorbance at 575 nm as a function of time. The initial rate, rate constant and fixed time (120 min) procedures were used for constructing the calibration graphs to determine the concentration of the drug, which showed a linear response over the concentration range 16-37 μg mL -1 with correlation coefficient " r" 0.9997, 0.996, 0.9999, LOQ 6.968, 7.138, 2.462 μgmL -1 and LOD 2.090, 2.141 and 0.739 μgmL -1, respectively. In second method tranexamic acid was reacted with ferric chloride solution, yellowish orange colored chromogen showed λ max at 375 nm showing linearity in the concentration range of 50-800 μg mL -1 with correlation coefficient " r" 0.9997, LOQ 6.227 μgmL -1 and LOD 1.868 μgmL -1. The variables affecting the development of the color were optimized and the developed methods were validated statistically and through recovery studies. These results were also verified by IR and NMR spectroscopy. The proposed methods have been successfully applied to the determination of tranexamic acid in commercial pharmaceutical formulation.

  17. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    SciTech Connect

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  18. Effect of liquid environment on laser-induced backside wet etching of fused silica

    NASA Astrophysics Data System (ADS)

    Lee, Taehwa; Jang, Deoksuk; Ahn, Daehwan; Kim, Dongsik

    2010-02-01

    In laser-induced backside wet etching (LIBWE), the liquid absorbent indirectly heats the transparent material, causing explosive phase change and cavitation. Accordingly, the hydrodynamics of the absorbing liquid, including the size of the liquid chamber, is strongly related to the ablation process. Because the hydrodynamics is dependent on the elastic deformation of the sample, the sample thickness also affects the performance of LIBWE. In this work, experimental analyses were performed to elucidate the hydrodynamics in LIBWE and the effect on the etch rate by varying the liquid chamber size and sample thickness. A KrF excimer laser was used to ablate fused silica samples in toluene and the etch rate was quantified using a scanning profilometer. Laser flash shadowgraphy and photodeflection probing techniques were employed for in situ measurement of the laser-induced hydrodynamics and displacement of the sample, respectively, with a time resolution of approximately nanoseconds. To directly observe the effect of increased liquid pressure on LIBWE, the liquid pressure on the etching spot was locally increased by an external shock wave and the etch results are examined. This study confirms that the photomechanical effects from the laser-induced bubble plays a key role in the LIBWE process, revealing a linear relationship between the etch rate the applied recoil momentum. However, the dependence of the etch rate on the chamber size and sample thickness could not be explained by the change in recoil momentum, i.e., by the bubble pressure. Instead, transient deformation of the sample by the pressure impact was estimated to be mainly responsible for the dependence.

  19. Evaluation of the Bond Strength of Resin Cements Used to Lute Ceramics on Laser-Etched Dentin

    PubMed Central

    Duzdar, Lale; Oksuz, Mustafa; Tanboga, Ilknur

    2014-01-01

    Abstract Objective: The purpose of this study was to investigate the shear bond strength (SBS) of two different adhesive resin cements used to lute ceramics on laser-etched dentin. Background data: Erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) laser irradiation has been claimed to improve the adhesive properties of dentin, but results to date have been controversial, and its compatibility with existing adhesive resin cements has not been conclusively determined. Materials and methods: Two adhesive cements, one “etch-and-rinse” [Variolink II (V)] and one “self-etch” [Clearfil Esthetic Cement (C)] luting cement, were used to lute ceramic blocks (Vita Celay Blanks, Vita) onto dentin surfaces. In total, 80 dentin specimens were distributed randomly into eight experimental groups according to the dentin surface-etching technique used Er,Cr:YSGG laser and Er:YAG laser: (1) 37% orthophosphoric acid+V (control group), (2) Er,Cr:YSGG laser+V, (3) Er,Cr:YSGG laser+acid+V, (4) Er:YAG laser+V, (5) Er:YAG laser+acid+V, (6) C, (7) Er,Cr:YSGG laser+C, and (8) Er:YAG laser+C. Following these applications, the ceramic discs were bonded to prepared surfaces and were shear loaded in a universal testing machine until fracture. SBS was recorded for each group in MPa. Shear test values were evaluated statistically using the Mann–Whitney U test. Results: No statistically significant differences were evident between the control group and the other groups (p>0.05). The Er,Cr:YSGG laser+A+V group demonstrated significantly higher SBS than did the Er,Cr:YSGG laser+V group (p=0.034). The Er,Cr:YSGG laser+C and Er:YAG laser+C groups demonstrated significantly lower SBS than did the C group (p<0.05). Conclusions: Dentin surfaces prepared with lasers may provide comparable ceramic bond strengths, depending upon the adhesive cement used. PMID:24992276

  20. Precise wet-chemical etching

    NASA Technical Reports Server (NTRS)

    Grunthaner, F. J.

    1980-01-01

    Controlled amount of etchant applied to surface of rotating sample removes only few angstroms of material. Technique is suited to study of chemical and crystal structures. Rate can be varied through control of spin frequency, liquid viscosity, droplet size, total etchant volume, etchant concentration.

  1. Solid phase nucleic acid extraction technique in a microfluidic chip using a novel non-chaotropic agent: dimethyl adipimidate.

    PubMed

    Shin, Yong; Perera, Agampodi Promoda; Wong, Chee Chung; Park, Mi Kyoung

    2014-01-21

    Here, we present a silicon microfluidic system for the purification and extraction of nucleic acids from human body fluid samples utilizing a dimethyl adipimidate (DMA)-based solid-phase extraction method. We propose DMA, which has been used as an amino-reactive cross-linking agent within cells and proteins, as a non-chaotropic reagent for the capture of nucleic acids to overcome the limitations of existing chaotropic and non-chaotropic techniques such as low binding efficiency, PCR inhibition and so on. DMA contains bi-functional imidoesters that form reversible cross-linking structures with DNA therefore providing a high surface-area to volume ratio for capturing DNA without structurally modifying microfluidic channels. In this work, we have first demonstrated highly efficient capture and purification of genomic DNA (T24 cell line) with DMA using a label-free silicon microring resonator sensor device. In addition, we observed the improvement of the DNA amplification efficiency by using the proposed technique for both the genetic (HRAS) and epigenetic (RARβ) analysis of DNA biomarkers. Particularly, we confirmed that the DMA-based solid-phase extraction technique can be applied for the extraction of genomic DNA with higher purity (p < 0.001) using human body fluids (blood and urine) in silicon microfluidic devices compared to other chaotropic methods. Therefore, the proposed technique would be able to harmonize with a micro-total analysis system platform for the analysis of genetic and epigenetic DNA biomarkers related to human diseases in the field of point-of-care (POC) diagnostic applications. PMID:24263404

  2. Identification of immunoglobulins using Chou's pseudo amino acid composition with feature selection technique.

    PubMed

    Tang, Hua; Chen, Wei; Lin, Hao

    2016-04-01

    Immunoglobulins, also called antibodies, are a group of cell surface proteins which are produced by the immune system in response to the presence of a foreign substance (called antigen). They play key roles in many medical, diagnostic and biotechnological applications. Correct identification of immunoglobulins is crucial to the comprehension of humoral immune function. With the avalanche of protein sequences identified in postgenomic age, it is highly desirable to develop computational methods to timely identify immunoglobulins. In view of this, we designed a predictor called "IGPred" by formulating protein sequences with the pseudo amino acid composition into which nine physiochemical properties of amino acids were incorporated. Jackknife cross-validated results showed that 96.3% of immunoglobulins and 97.5% of non-immunoglobulins can be correctly predicted, indicating that IGPred holds very high potential to become a useful tool for antibody analysis. For the convenience of most experimental scientists, a web-server for IGPred was established at http://lin.uestc.edu.cn/server/IGPred. We believe that the web-server will become a powerful tool to study immunoglobulins and to guide related experimental validations. PMID:26883492

  3. Humic Acid Metal Cation Interaction Studied by Spectromicroscopy Techniques in Combination with Quantum Chemical Calculations

    SciTech Connect

    Plaschke, M.; Rothe, J; Armbruster, M; Denecke, M; Naber, A; Geckeis, H

    2010-01-01

    Humic acids (HA) have a high binding capacity towards traces of toxic metal cations, thus affecting their transport in aquatic systems. Eu(III)-HA aggregates are studied by synchrotron-based scanning transmission X-ray microscopy (STXM) at the carbon K-edge and laser scanning luminescence microscopy (LSLM) at the {sup 5}D{sub 0} {yields} {sup 7}F{sub 1,2} fluorescence emission lines. Both methods provide the necessary spatial resolution in the sub-micrometre range to resolve characteristic aggregate morphologies: optically dense zones embedded in a matrix of less dense material in STXM images correspond to areas with increased Eu(III) luminescence yield in the LSLM micrographs. In the C 1s-NEXAFS of metal-loaded polyacrylic acid (PAA), used as a HA model compound, a distinct complexation effect is identified. This effect is similar to trends observed in the dense fraction of HA/metal cation aggregates. The strongest complexation effect is observed for the Zr(IV)-HA/PAA system. This effect is confirmed by quantum chemical calculations performed at the ab initio level for model complexes with different metal centres and complex geometries. Without the high spatial resolution of STXM and LSLM and without the combination of molecular modelling with experimental results, the different zones indicating a 'pseudo'-phase separation into strong complexing domains and weaker complexing domains of HA would never have been identified. This type of strategy can be used to study metal interaction with other organic material.

  4. Photoelectrochemical etching of silicon carbide (SiC) and its characterization

    NASA Technical Reports Server (NTRS)

    Collins, D. M.; Harris, G. L.; Wongchotigul, K.

    1995-01-01

    Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

  5. Fabrication of Glassy Carbon Molds Using Hydrogen Silsequioxane Patterned by Electron Beam Lithography as O2 Dry Etching Mask

    NASA Astrophysics Data System (ADS)

    Yasui, Manabu; Sugiyama, Yoshinari; Takahashi, Masaharu; Kaneko, Satoru; Uegaki, Jun-ichi; Hirabayashi, Yasuo; Sugimoto, Koh-ichi; Maeda, Ryutaro

    2008-06-01

    Glass is a good candidate material for optical devices because of its enhanced optical properties, the technique of die machining has not been established for the hot embossing of glass. In this study, we used the glassy carbon (GC) mold for the hot embossing of glass. An inductively coupled plasma reactive ion etching (ICP-RIE) using oxygen plasma was employed for the submicron structuring of the GC mold. Hydrogen silsesquioxane (HSQ) is a negative-type electron beam (EB) resist used to be resistant to oxygen plasma. HSQ patterns drawn by electron beam lithography (EBL) were used as the O2 dry etching mask. The etching selectivity between HSQ and GC was 35. The average of the extent of side etching was 40 nm at a depth of 300 nm. The side etching functioning as the draft angle was caused mainly by oxygen radicals, because HSQ patterns remained even after GC patterns were side-etched. We confirmed that the GC mold fabricated by O2 dry etching can be used for glass hot embossing. Since the mold lubricant was not rubbed on the mold surface, GC is the appropriate mold material for Pyrex glass.

  6. Nitrous Acid: Intercomparison of techniques and Implications of measurements for photochemistry

    NASA Astrophysics Data System (ADS)

    Pinto, J. P.; Dibb, J. E.; Stutz, J.; Tsai, J.; Ren, X.; Wood, E. C.; Zhang, R.; Lee, B.; Levy, M. E.; Rappenglueck, B.; Lefer, B. L.; Oakes, M. M.; Olaguer, E.

    2013-12-01

    Because of the importance of HONO as a radical reservoir, consistent and accurate measurements of its concentration are needed. As part of the SHARP (Study of Houston Atmospheric Radical Precursors), time series of HONO were obtained by six different measurement techniques on the roof of the Moody Tower (MT) at the University of Houston. Techniques used were long path differential optical absorption spectroscopy (DOAS), stripping coil- (UVVIS) absorption photometry (SC-AP), long-path absorption photometry (LOPAP), mist chamber/ ion chromatography (MC-IC), quantum cascade-tunable infrared laser differential absorption spectroscopy (QC-TILDAS) and ion drift -chemical ionization mass spectrometry (ID-CIMS). Various combinations of techniques were in operation during the period from 15 April through 31 May 2009. This study comparing methods is unique in that it compares several techniques entirely at ambient conditions in a polluted atmosphere. All instruments recorded a similar diurnal pattern of HONO concentrations with higher median and mean values during the night and lower values during the day throughout the entire measurement period. Highest values were observed in the final two weeks of the campaign. The MC-IC, SC-AP, and QC-TILDAS, and to a lesser extent the DOAS, tracked each other most closely. Largest differences between pairs of measurements were evident during the day for concentrations < ~100 ppt. Above ~ 200 ppt, concentrations from the SC-AP, MC-IC and QC-TILDAS converged to within about 20%, with slightly larger discrepancies when DOAS was considered. Relationships between HONO and other gas phase and aerosol species will also be considered.

  7. Lip Injection Techniques Using Small-Particle Hyaluronic Acid Dermal Filler.

    PubMed

    Chiu, Annie; Fabi, Sabrina; Dayan, Steven; Nogueira, Alessandra

    2016-09-01

    The shape and fullness of the lips have a significant role in facial aesthetics and outward appearance. The corrective needs of a patient can range from a subtle enhancement to a complete recontouring including correction of perioral rhytides. A comprehensive understanding of the lower face anatomical features and injection site techniques are foundational information for injectors. Likewise, the choice of filler material contributes to the success of the injection techniques used, and facilitates a safe, effective, and natural appearing outcome. The small-particle HA 20 mg/mL with lidocaine 0.3% (SP-HAL, Restylane® Silk; Galderma Laboratories, Fort Worth, Texas) is indicated for submucosal implantation for lip augmentation and dermal implantation for correction of perioral rhytides. Due to its rheological properties and smaller particle size, SP-HAL is a well-suited filler for the enhancement and correction of lip shape and volume, as well as for the correction of very fine perioral rhytides. This work is a combined overview of techniques found in the current literature and recommendations provided by contributing authors.

    J Drugs Dermatol. 2016;15(9):1076-1082. PMID:27602969

  8. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    NASA Astrophysics Data System (ADS)

    Stráský, Josef; Havlíková, Jana; Bačáková, Lucie; Harcuba, Petr; Mhaede, Mansour; Janeček, Miloš

    2013-09-01

    Presented work aims at multi-method characterization of combined surface treatment of Ti-6Al-4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  9. Alignment and Use of Self-Assembled Peptide Nanotubes as Dry-Etching Mask

    NASA Astrophysics Data System (ADS)

    Andersen, Karsten B.; Castillo-León, Jaime; Bakmand, Tanya; Svendsen, Winnie E.

    2012-06-01

    Self-assembled diphenylalanine peptide nanotubes provide a means of achieving nanostructured materials in a very simple and fast way. Recent discoveries have shown that this unique material, in addition to remaining stable under dry conditions, rapidly dissolves in water making it a promising candidate for controlled nanofabrication without organic solvents. The present work demonstrates how this unique structure can be aligned, manipulated and used as both an etching mask in a dry etching procedure and as a lift-off material. As a further demonstration of the potential of this technique, the peptide nanotubes were utilized to fabricate silicon nanowire devices and gold nanoslits in a rapid manner.

  10. Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1984-01-01

    The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

  11. Metal assisted catalyzed etched (MACE) black Si: optics and device physics.

    PubMed

    Toor, Fatima; Miller, Jeffrey B; Davidson, Lauren M; Duan, Wenqi; Jura, Michael P; Yim, Joanne; Forziati, Joanne; Black, Marcie R

    2016-08-25

    Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology. PMID:27533490

  12. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    NASA Astrophysics Data System (ADS)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  13. Wettability investigating on the wet etching textured multicrystalline silicon wafer

    NASA Astrophysics Data System (ADS)

    Liu, Xiangju; Niu, Yuchao; Zhai, Tongguang; Ma, Yuying; Zhen, Yongtai; Ma, Xiaoyu; Gao, Ying

    2016-02-01

    In order to investigate the wettability properties of multicrystalline silicon (mc-Si), the different surface structures were fabricated on the as-cut p-type multi-wire slurry sawn mc-Si wafers, such as as-cut, polished and etched in various acid solutions. The contact angles and the XRD spectra of these samples were measured. It was noted that both the surface structures and the use of surfactant, such as Tween 80, made a stronger effect on wettability of the Si wafer. Due to the lipophilic groups of Tween 80 combined with the Si atoms while the hydrophilic groups of it were outward, a lipophilic surface of Si changed into a hydrophilic one and the rougher the surface, the stronger the hydrophily. Thus, it is feasible to add an appropriate surfactant into the etching solution during black-Si wafer fabrication for solar cells. In addition, different crystal plains of Si had different dangling bond density, so that their surface energies were different. A surface with higher surface energy could attract more water atoms and its wettability was better. However, the effect of crystal plain on the surface wettability was much weaker than surface morphology.

  14. Dynamic observation of electrochemical etching in silicon

    SciTech Connect

    Ross, F.M.; Searson, P.C.

    1995-03-01

    The authors have designed and constructed a TEM specimen holder in order to observe the process of pore formation in silicon. The holder incorporates electrical feedthroughs and a sealed reservoir for the electrolyte and accepts lithographically patterned silicon specimens. The authors describe the system and present preliminary, ex situ observations of the etching process.

  15. Dry etching of III-V nitrides

    SciTech Connect

    Pearton, S.J.; Shul, R.J.; McLane, G.F.; Constantine, C.

    1995-12-01

    The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

  16. Etch Profile Simulation Using Level Set Methods

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  17. Circulating nucleic acids in plasma and serum: applications in diagnostic techniques for noninvasive prenatal diagnosis

    PubMed Central

    Gahan, Peter B

    2013-01-01

    The analysis of fetal nucleic acids in maternal blood 13 years ago has led to the initiation of noninvasive methods for the early determination of fetal gender, rhesus D status, and a number of aneuploid disorders and hemoglobinopathies. Subsequently, a comparatively large quantity of fetal DNA and RNA has been demonstrated in amniotic fluid as well as small amounts in premature infant saliva. The DNA and RNA in amniotic fluid has permitted an analysis of core transcriptomes, whilst the DNA and RNA in saliva allows the early detection and treatment monitoring of fetal developmental problems. These aspects are discussed together with the methodology and limits of analysis for noninvasive prenatal diagnosis in predictive, preventive, and personalized medicine. PMID:23637563

  18. Purification Techniques of Bacteriocins from Lactic Acid Bacteria and Other Gram-Positive Bacteria

    NASA Astrophysics Data System (ADS)

    Saavedra, Lucila; Sesma, Fernando

    The search for new antimicrobial peptides produced by lactic acid ­bacteria and other Gram-positive microorganisms has become an interesting field of research in the past decades. The fact that bacteriocins are active against numerous foodborne and human pathogens, are produced by generally regarded as safe (GRAS) microorganisms, and are readily degraded by proteolytic host systems makes them attractive candidates for biotechnological applications. However, before suggesting or choosing a new bacteriocin for future technology developments, it is necessary to elucidate its biochemical structure and its mode of action, which may be carried out once the bacteriocin is purified to homogeneity. This chapter focuses on describing the main strategies used for the purification of numerous bacteriocins.

  19. Dissection of the cis-2-decenoic acid signaling network in Pseudomonas aeruginosa using microarray technique

    PubMed Central

    Rahmani-Badi, Azadeh; Sepehr, Shayesteh; Fallahi, Hossein; Heidari-Keshel, Saeed

    2015-01-01

    Many bacterial pathogens use quorum-sensing (QS) signaling to regulate the expression of factors contributing to virulence and persistence. Bacteria produce signals of different chemical classes. The signal molecule, known as diffusible signal factor (DSF), is a cis-unsaturated fatty acid that was first described in the plant pathogen Xanthomonas campestris. Previous works have shown that human pathogen, Pseudomonas aeruginosa, also synthesizes a structurally related molecule, characterized as cis-2-decenoic acid (C10: Δ2, CDA) that induces biofilm dispersal by multiple types of bacteria. Furthermore, CDA has been shown to be involved in inter-kingdom signaling that modulates fungal behavior. Therefore, an understanding of its signaling mechanism could suggest strategies for interference, with consequences for disease control. To identify the components of CDA signaling pathway in this pathogen, a comparative transcritpome analysis was conducted, in the presence and absence of CDA. A protein-protein interaction (PPI) network for differentially expressed (DE) genes with known function was then constructed by STRING and Cytoscape. In addition, the effects of CDA in combination with antimicrobial agents on the biofilm surface area and bacteria viability were evaluated using fluorescence microscopy and digital image analysis. Microarray analysis identified 666 differentially expressed genes in the presence of CDA and gene ontology (GO) analysis revealed that in P. aeruginosa, CDA mediates dispersion of biofilms through signaling pathways, including enhanced motility, metabolic activity, virulence as well as persistence at different temperatures. PPI data suggested that a cluster of five genes (PA4978, PA4979, PA4980, PA4982, PA4983) is involved in the CDA synthesis and perception. Combined treatments using both CDA and antimicrobial agents showed that following exposure of the biofilms to CDA, remaining cells on the surface were easily removed and killed by

  20. Wavelength Dependence of UV Effect on Etch Rate and Noise in CR-39

    NASA Astrophysics Data System (ADS)

    Wiesner, Micah; Traynor, Nathan; McLean, James; Padalino, Stephen; Sangster, Craig; McCluskey, Michelle

    2014-10-01

    The use of CR-39 plastic as a SSNTD is an effective technique for recovering data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched at elevated temperatures with NaOH, producing signal pits at the nuclear track sites that are measurable by an optical microscope. CR-39 pieces also exhibit etch-induced noise, either surface roughness or pit-like features not caused by nuclear particles, which negatively affects the ability of observers to distinguish actual pits. When CR-39 is exposed to high intensity UV light after nuclear irradiation and before etching, an increase in etch rates and pit diameters is observed. UV exposure can also increase noise, which in the extreme can distort the shapes of particle pits. Analyzing the effects of different wavelengths in the UV spectrum we have determined that light of the wavelength 255 nm increases etch rates and pit diameters while causing less background noise than longer UV wavelengths. Preliminary research indicates that heating CR-39 to elevated temperatures (~80 °C) during UV exposure also improves the signal-to-noise ratio for this process. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.