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Sample records for acid etching technique

  1. Effect of acid etching time and technique on bond strength of an etch-and-rinse adhesive.

    PubMed

    Faria-e-Silva, André L; Silva, João L; Almeida, Thauanna G; Veloso, Francielle B; Ribeiro, Sandra M; Andrade, Tiago D; Vilas-Boas, Bruna V; Martins, Marisa C; Menezes, Murilo S

    2011-01-01

    The aim of this study was to evaluate the effect of acid etching time and technique on bond strength of a two-step etch-and-rinse adhesive system to dentin and enamel. Thirty human third molars were mesio-distally sectioned, parallel to the long axis of each tooth, in two halves. Buccal/lingual surfaces were abraded to obtain both flat exposed enamel and dentine. The etchant was applied with and without the use of dispensing tips provided by manufacturer. When the tip was not used, the etchant was agitated (active) over the substrate or left undisturbed (passive). The etchings were done for 15 or 30s. After rinsing the acid, the adhesive XP Bond (Dentsply Caulk, Milford, DE, USA) was applied and light-cured. Resin composite cylinders were built up on dentin and enamel substrates. A shear load was applied to the samples at a crosshead speed of 0.5 mm/min until failure. Data were statistically analyzed by three-way ANOVA and Tukey test (alpha = 0.05). There was no difference between the etching techniques in bonding to enamel. Application with the tip or active without the tip promoted higher bond strength to dentin than passive application. Extending the etching time reduced the bond strength to dentin and did not alter the values for enamel. The passive application without tips produced the lowest bond strength when the etchant was applied for 15s. All techniques demonstrated similar values for application during 30s. The acid etching time and technique significantly influence the bond strength of etch-and-rinse adhesive to dentin. PMID:22010410

  2. Effect of acid etching time and technique on interfacial characteristics of the adhesive-dentin bond using differential staining.

    PubMed

    Wang, Yong; Spencer, Paulette

    2004-06-01

    Dentin bonding using the total-etch method has been claimed to be technique-sensitive. The aim of this study is to examine the effect of acid-etch variations on the dentin demineralization and interfacial structure of the adhesive-dentin bond using a differential staining technique. Single Bond adhesive with 35% phosphoric acid gel was used. The occlusal one-third of the crown was removed from 60 extracted, unerupted human third molars. Smear layers were created by abrading the dentin with 600 grit SiC under water for 30 s. The prepared teeth were randomly assigned to four groups according to etching time (Group 1, 10 s; Group 2, 15 s; Group 3, 30 s; Group 4, 60 s). In each group, the etching gel was: (i) applied and spread to the dentin surface and left to stand undisturbed; (ii) applied and gently agitated during etching; (iii) applied without using dispensing tips for the syringe and left for the same period as above. After rinsing, the etched dentin was then treated with the adhesive per manufacturers' instructions. 3-5 micro m thin sections of the adhesive/dentin (a/d) interface were cut with a microtome and stained with Goldner's trichrome. Stained, thin sections from each prepared tooth were imaged with light microscopy. The depth and extent of dentin demineralization, and the a/d interdiffusion zone were clearly visible by this differential staining microtechnique. The thickness of the interdiffusion zone increased as a function of etching time. However, the etchant gel application methods have a significant influence on dentin demineralization. Although agitating acid gel facilitates the penetration and etching into dentin, it should not be recommended, especially for longer etching time. These results indicated that the etching technique has a large effect on the profile of both dentin demineralization and interfacial structure.

  3. A Comparison of Shear Bond Strengths of Metal and Ceramic Brackets using Conventional Acid Etching Technique and Er:YAG Laser Etching

    PubMed Central

    Yassaei, Sogra; Fekrazad, Reza; Shahraki, Neda; Goldani Moghadam, Mahdjoube

    2014-01-01

    Background and aims. The aim of this study was to compare shear bond strength (SBS) of metal and ceramic brackets bonded to enamel using acid versus Er:YAG laser etching. Materials and methods. Eighty premolars were divided into 4 groups: AM (acid etching/ metal brackets), AC (acid etching/ ceramic brackets), LM (laser etching/ metal brackets) and LC (laser etching/ ceramic brackets). Enamel condition-ing was done using acid in AC and AM and Er:YAG laser in LC and LM. Brackets were debonded with a Dartec machine and the SBSs were determined. Adhesive remnant index was evaluated under a stereomicroscope. Two additional teeth were conditioned with acid and laser for scanning electron microscopy examination. Comparisons of SBS value were done by ANOVA test. Results. statistical analyses showed that SBSs of acid groups were significantly higher than that of laser groups, but dif-ferences between SBS values of AC/ AM and LC/LM were not significant. SEM examination revealed different etching pattern. Conclusion. Low power Er:YAG laser etching offers clinically acceptable SBS which besides its other superiorities to acid etching can be an appropriate alternative for bonding of ceramic brackets. PMID:25024836

  4. Etching study of poled lithium tantalate crystal using wet etching technique with ultrasonic assistance

    NASA Astrophysics Data System (ADS)

    Gao, Z. D.; Wang, Q. J.; Zhang, Y.; Zhu, S. N.

    2008-02-01

    Utilizing the difference in etching rates of the positive and negative domains in an acid solution, domain pattern can be fabricated on the polarity surface of a congruent lithium tantalate crystal. Our results show that the ultrasonic agitation can improve the etching rate. An enhanced factor up to six was realized under a 50 W of ultrasonic power in a mixture with volumetric ratio of HF to H 2SO 4 at 1:2. The dependences of etching morphology on etching time and etching etchant for congruent lithium tantalate crystal were studied. The technique is applicable to fabricating three-dimensional microstructures on the surface of ferroelectric crystals.

  5. Patterning enhancement techniques by reactive ion etch

    NASA Astrophysics Data System (ADS)

    Honda, Masanobu; Yatsuda, Koichi

    2012-03-01

    The root causes of issues in state-of-the-arts resist mask are low plasma tolerance in etch and resolution limit in lithography. This paper introduces patterning enhancement techniques (PETs) by reactive ion etch (RIE) that solve the above root causes. Plasma tolerance of resist is determined by the chemical structure of resin. We investigated a hybrid direct current (DC) / radio frequency (RF) RIE to enhance the plasma tolerance with several gas chemistries. The DC/RF hybrid RIE is a capacitive coupled plasma etcher with a superimposed DC voltage, which generates a ballistic electron beam. We clarified the mechanism of resist modification, which resulted in higher plasma tolerance[1]. By applying an appropriate gas to DC superimposed (DCS) plasma, etch resistance and line width roughness (LWR) of resist were improved. On the other hand, RIE can patch resist mask. RIE does not only etch but also deposits polymer onto the sidewall with sedimentary type gases. In order to put the deposition technique by RIE in practical use, it is very important to select an appropriate gas chemistry, which can shrink CD and etch BARC. By applying this new technique, we successfully fabricated a 35-nm hole pattern with a minimum CD variation.

  6. Technique for etching monolayer and multilayer materials

    DOEpatents

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  7. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  8. Evaluation of over-etching technique in the endodontically treated tooth restoration

    PubMed Central

    Migliau, Guido; Piccoli, Luca; Besharat, Laith Konstantinos; Di Carlo, Stefano; Pompa, Giorgio

    2015-01-01

    Summary The main purpose of a post-endodontic restoration with posts is to guarantee the retention of the restorative material. The aim of the study was to examine, through the push-out test, how bond strength between the post and the dentin varied with etching time with 37% orthophosphoric acid, before cementation of a glass fiber post. Moreover, it has been examined if over-etching (application time of the acid: 2 minutes) was an effective technique to improve the adhesion to the endodontic substrate, after highlighting the problems of adhesion concerning its anatomical characteristics and the changes after the endodontic treatment. Highest bond strength values were found by etching the substrate for 30 sec., while over-etching didn’t improve bond strength to the endodontic substrate. PMID:26161247

  9. Laser etching technique using bubble jet impact for glass substrates

    NASA Astrophysics Data System (ADS)

    Weng, Tsu-Shien; Tsai, Chwan-Huei

    2015-03-01

    The purpose of this paper is to propose a new laser etching technique using bubble jet impact for glass substrates. An Nd:YAG laser is applied to the backside of the substrate which is partially submerged in water. A metal plate is placed below the glass substrate. The metal vaporizes the water and generates a turbulent bubble flow. The bubble nozzle is proposed to enhance the impact of the bubble jet. The glass surface will first be softened, and then expelled by the shock wave resulting from the jet impact. The phenomena of bubble nucleation, growth, collapse, and jet impact were studied in this paper. The formation of the etching cavity can be divided into three types: double-petal, triple-petal, and four-petal. The etching pits expanded and combined to form a complete cavity. The needed laser power does not exceed 5 W. The proposed laser etching method was successfully demonstrated for etching a cavity of 5-20 µm in depth and 50-250 µm in diameter. The bubble jet of the small nozzle diameter is well concentrated, creating a strong jet impact on the glass surface. A greater nozzle depth can enhance the impact of the bubble jet. The proposed etching technique has great potential to provide an improved solution for the micro-machining of glass.

  10. Orthodontic bonding to acid- or laser-etched prebleached enamel

    PubMed Central

    Ozdemir, Fulya; Cakan, Umut; Gonul, Nese

    2013-01-01

    Objective Bonding forces of brackets to enamel surfaces may be affected by the procedures used for bleaching and enamel etching. The aim of this study was to investigate the bonding strength of orthodontic brackets to laser-etched surfaces of bleached teeth. Methods In a nonbleached control group, acid etching (group A) or Er:YAG laser application (group B) was performed prior to bracket bonding (n = 13 in each group). Similar surface treatments were performed at 1 day (groups C and D; n = 13 in each subgroup) or at 3 weeks (groups E and F; n = 13 in each subgroup) after 38% hydrogen peroxide bleaching in another set of teeth. The specimens were debonded after thermocycling. Results Laser etching of bleached teeth resulted in clinically unacceptable low bonding strength. In the case of acid-etched teeth, waiting for 3 weeks before attachment of brackets to the bleached surfaces resulted in similar, but not identical, bond strength values as those obtained with nonbleached surfaces. However, in the laser-etched groups, the bonding strength after 3 weeks was the same as that for the nonbleached group. Conclusions When teeth bleached with 38% hydrogen peroxide are meant to be bonded immediately, acid etching is preferable. PMID:23814709

  11. Morphological Changes of Human Dentin after Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) and Carbon Dioxide (CO2) Laser Irradiation and Acid-etch Technique: An Scanning Electron Microscopic (SEM) Evaluation

    PubMed Central

    Shahabi, Sima; Chiniforush, Nasim; Juybanpoor, Nasrin

    2013-01-01

    Introduction: The aim of this study was to investigate the morphological changes of human dentin after Erbium-Doped Yttrium Aluminum Garnet (Er:YAG), Carbon Dioxide(CO2) laser-irradiation and acid-etching by means of scanning electron microscopic (SEM) Methods: 9 extracted human third molars were used in this study. The teeth were divided in three groups: first group, CO2 laser with power of 1.5 w and frequency of 80 Hz; second group, Er:YAG laser with output power of 1.5 W frequency of 10 Hz, very short pulse with water and air spray was applied; and third group, samples were prepared by acid-etching 37% for 15 sec and rinsed with air-water spray for 20 sec. Then, the samples were prepared for SEM examination. Results: Melting and cracks can be observed in CO2 laser but in Er:YAG laser cleanedablated surfaces and exposed dentinal tubules, without smear layer was seen. Conclusion: It can be concluded that Er:YAG laser can be an alternative technique for surface treatment and can be considered as safe as the conventional methods. But CO2 laser has some thermal side effects which make this device unsuitable for this purpose. PMID:25606306

  12. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    NASA Technical Reports Server (NTRS)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  13. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    DOEpatents

    Steeves, Arthur F.; Stewart, James C.

    1981-01-01

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  14. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    DOEpatents

    Not Available

    1980-05-28

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking is described. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  15. Dental zirconia can be etched by hydrofluoric acid.

    PubMed

    Sriamporn, Tool; Thamrongananskul, Niyom; Busabok, Chumphol; Poolthong, Sushit; Uo, Motohiro; Tagami, Junji

    2014-01-01

    The surface morphology and crystal structure change of dental zirconia after hydrofluoric acid (HF) etching were evaluated. Four groups of sintered zirconia specimens were 1) control group, 2) immersion in 9.5%HF at 25°C for 1, 2, 3, or 24 h, 3) immersion in 9.5%HF at 80°C for 1, 3, 5, or 30 min and 4) immersion in 48%HF at 25°C for 30 or 60 min. The specimens were evaluated under SEM and XRD. The SEM analysis revealed changes in surface topography for all the HF-etched zirconia specimens. The irregularities surface increased with increasingly longer immersion times and higher etching solution temperatures. The XRD analysis of the HFetched zirconia specimens revealed the presence of a crystalline monoclinic phase along with a tetragonal form. It was concluded HF can etch dental zirconia ceramic, creating micro-morphological changes. Tetragonal-to-monoclinic phase transformation was induced on the etched zirconia surface.

  16. Laser micromachined and acid-etched Fabry-Perot cavities in silica fibres

    NASA Astrophysics Data System (ADS)

    Machavaram, V. R.; Tuck, C. J.; Teagle, M. C.; Badcock, R. A.; Fernando, G. F.

    2006-01-01

    This paper reports on two techniques for creating Fabry-Perot cavities in conventional single- and multi-mode optical fibres. The authors have reported previously on the design and fabrication of extrinsic fibre Fabry-Perot interferometric multi-functional sensors. Here, the authors report on two novel techniques for creating intrinsic fibre optic sensors based on the Fabry-Perot etalon. The first technique involved the use of hydrofluoric acid to preferentially etch the core of the optical fibre. This technique is simple to carry out and provides a cost-effective means for manufacturing intrinsic fibre Fabry-Perot sensors. In the second technique, a 157 nm excimer laser along with a custom-designed beam delivery system was used to ablate (micro-machine) near-paralleled walled cavities through the diameter of the optical fibre (outer diameter of 125 μm). The paper details the experimental methodology and the associated instrumentation for the two techniques. The acid etched and laser ablated cavities were characterised using a 3-D surface profiler, optical and scanning electron microscopy. The feasibility of using these cavities as intrinsic fibre Fabry-Perot strain sensors is demonstrated. This was achieved by surface-mounting the acid etched cavities on to composite tensile test specimens. The output from the optical fibre devices was compared with surface-mounted electrical resistance strain gauges.

  17. Thermal reactive ion etching technique involving use of self-heated cathode.

    PubMed

    Yamada, S; Minami, Y; Sohgawa, M; Abe, T

    2015-04-01

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF6 plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source. PMID:25933887

  18. Thermal reactive ion etching technique involving use of self-heated cathode

    NASA Astrophysics Data System (ADS)

    Yamada, S.; Minami, Y.; Sohgawa, M.; Abe, T.

    2015-04-01

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF6 plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source.

  19. Thermal reactive ion etching technique involving use of self-heated cathode

    SciTech Connect

    Yamada, S.; Minami, Y.; Sohgawa, M.; Abe, T.

    2015-04-15

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF{sub 6} plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source.

  20. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    NASA Astrophysics Data System (ADS)

    Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

    2013-08-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τFWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm2, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm2. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  1. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    PubMed Central

    Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh

    2014-01-01

    Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS) and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG) laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under ×10 magnification and adhesive remnant index (ARI) score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa) was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa) (P = 0.41). There was no significant difference in the ARI scores between two groups (P = 0.08). However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching. PMID:25097641

  2. Bonding to enamel/dentin etched with phosphoric and hydrofluoric acids.

    PubMed

    Barghi, Nassar; Covington, Kendra; Fischer, Dan E; Herbold, Edward T

    2004-10-01

    Repairing porcelain intraorally allows clinicians to provide their patients with a conservative means of treating fractured or debonded restorations. This requires, however, the etching of both porcelain and tooth structure with etching solutions. It is thus relevant to understand the effect that different etching procedures have on shear bond strengths of composite resins to both dentin and enamel structures. Based on the results of this investigation, the authors recommend isolation of tooth structures and the etching of porcelain with hydrofluoric acid.

  3. Bond strengths of all-ceramics: acid vs laser etching.

    PubMed

    Gökçe, B; Ozpinar, B; Dündar, M; Cömlekoglu, E; Sen, B H; Güngör, M A

    2007-01-01

    Various applications of dental lasers on dental materials have been proposed for surface modifications. This study evaluated whether laser etching could be an alternative to hydrofluoric acid (HF) etching. One hundred and ten lithia-based all-ceramic specimens (Empress 2) (R: 4 mm, h: 4 mm) were prepared and divided into five groups (n = 22/group). The untreated specimens served as the control, while one of the experimental groups was treated with 9.5% HF for 30 seconds. Three remaining test groups were treated with different laser (Er:YAG laser wavelength:2940 nm, OpusDent) power settings: 300 mJ, 600 mJ and 900 mJ. Ten specimens in each group were luted to the other 10 specimens by a dual-curing cement (Variolink II), and shear-bond strength (SBS) tests were performed (Autograph, crosshead speed: 0.5 mm/minute). The results were statistically analyzed (Kruskal Wallis and Mann Whitney-U, alpha = .05). Mean SBS (MPa) were 31.9 +/- 4.0, 41.4 +/- 4.3, 42.8 +/- 6.2, 29.2 +/- 4.5 and 27.4 +/- 3.8 for the control and HF, 300, 600 and 900 mJ groups, respectively. SEM evaluations revealed different surface morphologies depending on the laser parameters. The differences between HF acid and 300 mJ, when compared with the control, 600 and 900 mJ groups, were significant (p < .05). The 300 mJ laser group exhibited the highest shear-bond strength values, indicating that laser etching could also be used for surface treatments.

  4. Release of multi-layer metal structure in MEMS devices by dry etching technique

    NASA Astrophysics Data System (ADS)

    Das, N. C.

    2002-04-01

    Reactive ion etching technique was used to remove interleave photoresist layer for free standing metal structure in microelectromechanical systems (MEMS) devices. Mixture of oxygen and CF 4 gas was used to get isotropic etching profile. Etching process was optimized to get large metal structure of 100×100 μm 2 without any surface bending. The etching rate of 0.7 μm/min at 60 W of RIE plasma power is found to be optimum process for the particular application. The reported dry release technique is fully compatible with standard silicon IC processing and hence can be used for hybridize process used in MEMS array application.

  5. [Recovery of fluoride orally on the acid-etched tooth surface].

    PubMed

    Tanaka, M; Kobayashi, K; Okumura, F; Ono, H; Kadoma, Y; Imai, Y

    1989-01-01

    There are many reports concerning the recovery phenomenon of acid-etched enamel surfaces of teeth. Many studies of surface hardness, acid resistant properties, radiolucency, and surface morphology suggest that orally the acid-etched enamel reverts to a state nearly similar to that of the intact enamel before the acid etching. This study was conducted in order to verify the existence of the recovery phenomenon of fluoride on acid-etched enamel, because the surface layer of a high fluoride concentration is removed from the surface enamel by the acid etching. The deciduous upper central incisors of both sides were etched with phosphoric acid. The fluoride content of one incisor was measured immediately after the etching and that of the opposite incisor was also measured in vivo after 4 weeks, during which period no special fluoride was used. The fluoride content of the tooth surface in the mouth after 4 weeks significantly increased by about 50 ppm, when compared to that immediately after the acid etching. No significant relationship was found between the fluoride increase and the fluoride concentration of the patients' saliva and drinking water which were the probable supply sources of fluoride for the teeth. No relationship was found between the fluoride increase and the number of second deciduous molars with defects or fillings, which was counted as a measure of the patient's susceptibility to caries.

  6. Shear bond strength and debonding characteristics of metal and ceramic brackets bonded with conventional acid-etch and self-etch primer systems: An in-vivo study

    PubMed Central

    Mirzakouchaki, Behnam; Sharghi, Reza; Shirazi, Samaneh; Moghimi, Mahsan; Shahrbaf, Shirin

    2016-01-01

    Background Different in-vitro studies have reported various results regarding shear bond strength (SBS) of orthodontic brackets when SEP technique is compared to conventional system. This in-vivo study was designed to compare the effect of conventional acid-etching and self-etching primer adhesive (SEP) systems on SBS and debonding characteristics of metal and ceramic orthodontic brackets. Material and Methods 120 intact first maxillary and mandibular premolars of 30 orthodontic patients were selected and bonded with metal and ceramic brackets using conventional acid-etch or self-etch primer system. The bonded brackets were incorporated into the wire during the study period to simulate the real orthodontic treatment condition. The teeth were extracted and debonded after 30 days. The SBS, debonding characteristics and adhesive remnant indices (ARI) were determined in all groups. Results The mean SBS of metal brackets was 10.63±1.42 MPa in conventional and 9.38±1.53 MPa in SEP system, (P=0.004). No statistically significant difference was noted between conventional and SEP systems in ceramic brackets. The frequency of 1, 2 and 3 ARI scores and debonding within the adhesive were the most common among all groups. No statistically significant difference was observed regarding ARI or failure mode of debonded specimens in different brackets or bonding systems. Conclusions The SBS of metal brackets bonded using conventional system was significantly higher than SEP system, although the SBS of SEP system was clinically acceptable. No significant difference was found between conventional and SEP systems used with ceramic brackets. Total SBS of metal brackets was significantly higher than ceramic brackets. Due to adequate SBS of SEP system in bonding the metal brackets, it can be used as an alternative for conventional system. Key words:Shear bond strength, Orthodontic brackets, Adhesive remnant index, self-etch. PMID:26855704

  7. Resin–dentin bonds to EDTA-treated vs. acid-etched dentin using ethanol wet-bonding

    PubMed Central

    Sauro, Salvatore; Toledano, Manuel; Aguilera, Fatima Sánchez; Mannocci, Francesco; Pashley, David H.; Tay, Franklin R.; Watson, Timothy F.; Osorio, Raquel

    2013-01-01

    Objective To compare resin–dentin bond strengths and the micropermeability of hydrophobic vs. hydrophilic resins bonded to acid-etched or EDTA-treated dentin, using the ethanol wet-bonding technique. Methods Flat dentin surfaces from extracted human third molars were conditioned before bonding with: 37% H3PO4 (15 s) or 0.1 M EDTA (60 s). Five experimental resin blends of different hydrophilicities and one commercial adhesive (SBMP: Scotchbond Multi-Purpose) were applied to ethanol wet-dentin (1 min) and light-cured (20 s). The solvated resins were used as primers (50% ethanol/50% comonomers) and their respective neat resins were used as the adhesive. The resin-bonded teeth were stored in distilled water (24 h) and sectioned in beams for microtensile bond strength testing. Modes of failure were examined by stereoscopic light microscopy and SEM. Confocal tandem scanning microscopy (TSM) interfacial characterization and micropermeability were also performed after filling the pulp chamber with 1 wt% aqueous rhodamine-B. Results The most hydrophobic resin 1 gave the lowest bond strength values to acid-etched dentin and all beams failed prematurely when the resin was applied to EDTA-treated dentin. Resins 2 and 3 gave intermediate bond strengths to both conditioned substrates. Resin 4, an acidic hydrophilic resin, gave the highest bond strengths to both EDTA-treated and acid-etched dentin. Resin 5 was the only hydrophilic resin showing poor resin infiltration when applied on acid-etched dentin. Significance The ethanol wet-bonding technique may improve the infiltration of most of the adhesives used in this study into dentin, especially when applied to EDTA-treated dentin. The chemical composition of the resin blends was a determining factor influencing the ability of adhesives to bond to EDTA-treated or 37% H3PO4 acid-etched dentin, when using the ethanol wet-bonding technique in a clinically relevant time period. PMID:20074787

  8. Efficient process development for bulk silicon etching using cellular automata simulation techniques

    NASA Astrophysics Data System (ADS)

    Marchetti, James; He, Yie; Than, Olaf; Akkaraju, Sandeep

    1998-09-01

    This paper describes cellular automata simulation techniques used to predict the anisotropic etching of single-crystal silicon. In particular, this paper will focus on the application of wet etching of silicon wafers using typical anisotropic etchants such as KOH, TMAH, and EDP. Achieving a desired final 3D geometry of etch silicon wafers often is difficult without requiring a number of fabrication design iterations. The result is wasted time and resources. AnisE, a tool to simulate anisotropic etching of silicon wafers using cellular automata simulation, was developed in order to efficiently prototype and manufacture MEMS devices. AnisE has been shown to effectively decrease device development time and costs by up to 50% and 60%, respectively.

  9. Development and application of the electrochemical etching technique

    NASA Astrophysics Data System (ADS)

    Sanders, M. E.

    1984-07-01

    The advances achieved in the development and application of several etched damage track plastic dosimeters that can be used to measure dose-equivalent from neutrons with energies from thermal to 20 MeV are discussed. The project was initiated with the design of a rem-responding dosimeter that measured fast ( 1 Mev) neutron dose-equivalent as a function of the damage track density directly induced within the volume of polycarbonate foils amplified by electrochemical etching. The thermal neutron dosimeter was composed of an external radiator tablet made of (7)LiF in contact with a polycarbonate foil and utilized the thermal neutron-induced (6) Li(n, (Alpha)) (3)H reaction to give a dose-equivalent response as a function of alpha track density registered in the detector foil. An intermediate (1 eV-1 MeV) neutron dosimeter was developed and was shown to give an approximately dose-equivalent response to neutrons with energies from 1 eV to 17 MeV. The intermediate neutron dosimeter consists of (6)LiF-Teflon/CR-3-9 Polymer foil assembly which is enclosed by a (Cd + In) neutron filter. The neutron dose-equivalent is measured as a variable function of these damage track density registered in the CR-39 detector foil to alpha particles from the 1/v dependent (6)Li(n, (ALPHA))(3)H reaction, recoil H, C, O nuclei from neutron-induced elastic scattering within the foil volume, and protons from the (6)Li(n, p) reaction for neutron energies above 2 MeV.

  10. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    SciTech Connect

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  11. In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

    PubMed

    Wilkins, Stewart J; Greenough, Michelle; Arellano, Consuelo; Paskova, Tania; Ivanisevic, Albena

    2014-03-01

    In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

  12. A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems

    NASA Astrophysics Data System (ADS)

    Limcharoen, A.; Pakpum, C.; Limsuwan, P.

    2013-07-01

    Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work. In this study, we propose a novel etching method called the polymer-rich re-deposition technique, used particularly for improving the etched sidewall where the re-deposition is able to accumulate. This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product. The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution. The traditional, additional cleaning process step used to remove the re-deposition material is not required anymore, so this reduces the overall processing time. The technique is demonstrated on an Al2O3-TiC substrate by C4F8 plasma, and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms, suggesting that it is a C—F polymer re-deposition.

  13. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    PubMed Central

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20% ± 10.89%) was much greater than those of machined (33.58% ± 8.63%), SLA (58.47% ± 12.89), or ANO Ti (59.62% ± 18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  14. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    NASA Astrophysics Data System (ADS)

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  15. An in vitro comparison of acid etched vs. nonacid etched dentin bonding agents/composite interfaces over primary dentin.

    PubMed

    Donly, K J; Keprta, M; Stratmann, R G

    1991-01-01

    The purpose of this study was to evaluate acid etchant penetration on dentin bonding agents and its effect on the composite resin bond strength. Forty primary molars were mounted, then the buccal and lingual surfaces were prepared into dentin. The teeth were divided into four groups of 10, and four dentin bonding agents were placed on the buccal and lingual surfaces of exposed dentin, as recommended by the manufacturers. One surface of each tooth was etched randomly for 60 sec with 35% phosphoric acid. A standardized tube of composite resin was placed on each dentin surface and polymerized for 60 sec. The tubes were sheared off with an Instron Testing Machine. The specimens then were sectioned to be examined by a scanning electron microscope (SEM). Results demonstrated shear strengths (kg/cm2) of etched (e) and unetched (u) bonding agents to be: Scotchbond (3M Dental Products, St. Paul, MN) (e) 116.7 +/- 37.7, (u) 116.7 +/- 63.0; Scotchbond 2 (3M Dental Products, St. Paul, MN) (e) 112.0 +/- 40.6, (u) 127.0 +/- 38.7; Gluma (Bayer Dental, Leverkusen, Federal Republic of Germany) (e) 80.1 +/- 21.7, (u) 107.0 +/- 16.6; Bondlite (Kerr Manufacturing Co., Romulus, MI) (e) 53.4 +/- 34.7, (u) 79.1 +/- 26.3. The analysis of variance (ANOVA) demonstrated a statistical significance in variance at the P less than 0.001 level. Scheffe's Test indicated no statistically significant differences between the bond strengths of etched vs. nonetched dentin bonding agents and composite resin. SEM evaluation indicated that the acid etchant penetrated none of the dentin bonding agents. PMID:1886824

  16. Improving pyroelectric energy harvesting using a sandblast etching technique.

    PubMed

    Hsiao, Chun-Ching; Siao, An-Shen

    2013-01-01

    Large amounts of low-grade heat are emitted by various industries and exhausted into the environment. This heat energy can be used as a free source for pyroelectric power generation. A three-dimensional pattern helps to improve the temperature variation rates in pyroelectric elements by means of lateral temperature gradients induced on the sidewalls of the responsive elements. A novel method using sandblast etching is successfully applied in fabricating the complex pattern of a vortex-like electrode. Both experiment and simulation show that the proposed design of the vortex-like electrode improved the electrical output of the pyroelectric cells and enhanced the efficiency of pyroelectric harvesting converters. A three-dimensional finite element model is generated by commercial software for solving the transient temperature fields and exploring the temperature variation rate in the PZT pyroelectric cells with various designs. The vortex-like type has a larger temperature variation rate than the fully covered type, by about 53.9%.The measured electrical output of the vortex-like electrode exhibits an obvious increase in the generated charge and the measured current, as compared to the fully covered electrode, by of about 47.1% and 53.1%, respectively. PMID:24025557

  17. Improving Pyroelectric Energy Harvesting Using a Sandblast Etching Technique

    PubMed Central

    Hsiao, Chun-Ching; Siao, An-Shen

    2013-01-01

    Large amounts of low-grade heat are emitted by various industries and exhausted into the environment. This heat energy can be used as a free source for pyroelectric power generation. A three-dimensional pattern helps to improve the temperature variation rates in pyroelectric elements by means of lateral temperature gradients induced on the sidewalls of the responsive elements. A novel method using sandblast etching is successfully applied in fabricating the complex pattern of a vortex-like electrode. Both experiment and simulation show that the proposed design of the vortex-like electrode improved the electrical output of the pyroelectric cells and enhanced the efficiency of pyroelectric harvesting converters. A three-dimensional finite element model is generated by commercial software for solving the transient temperature fields and exploring the temperature variation rate in the PZT pyroelectric cells with various designs. The vortex-like type has a larger temperature variation rate than the fully covered type, by about 53.9%.The measured electrical output of the vortex-like electrode exhibits an obvious increase in the generated charge and the measured current, as compared to the fully covered electrode, by of about 47.1% and 53.1%, respectively. PMID:24025557

  18. Morphological categorization of acid-base resistant zones with self-etching primer adhesive systems.

    PubMed

    Inoue, Go; Nikaido, Toru; Sadr, Alireza; Tagami, Junji

    2012-01-01

    This study investigated the influence of the composition of self-etching primer adhesive systems on the morphology of acid-base resistant zones (ABRZs). One-step self-etching primer systems (Clearfil Tri-S Bond, G-Bond, and One-Up Bond F Plus) and two-step self-etching primer systems (Clearfil SE Bond, Clearfil Protect Bond, UniFil Bond, and Mac Bond II) were used in this study. Each adhesive was applied on prepared dentin disk surfaces, and a resin composite was placed between two dentin disks. All resin-bonded specimens were subjected to acid-base challenge. Observation under a scanning electron microscope (SEM) revealed the creation of an ABRZ adjacent to the hybrid layer for all the self-etch primer adhesive systems, even when non-fluoride releasing adhesives were used. The presence of fluoride in two-step self-etching adhesive significantly increased the thickness of ABRZ created. Results suggested that an ABRZ was created with the use of self-etching primer adhesive systems, but its morphology differed between one-and two-step self-etching primer adhesive systems and was influenced by fluoride release activity.

  19. Early odontoblastic layer response to cavity preparation and acid etching in rats.

    PubMed

    Nemeth, Lidija; Erman, Andreja; Stiblar-Martincic, Draga

    2006-01-01

    The aim of this study was to establish the early odontoblastic layer response and quantitatively to estimate the number of odontoblasts after cavity preparation with and without acid etching. Half of 56 cavities prepared on rats' first upper molars were acid etched. Qualitative and morphometric analyses were made on histological and ultrathin sections 5 min, 6 h, 24 h and 72 h post-operatively. Under the etched cavity, a greater disarrangement of odontoblasts was found, modifications in nuclear shape and condensed chromatin 5 min. post-operatively. An additional reduction of odontoblast number was detected and an increase of aspirated cell number 5 min, 6 h and 24 h post-operatively, pronounced hyperaemia 6, 24 and 72 hours post-operatively and increased odontoblast number 72 hours post-operatively, compared to unetched cavities. In conclusion, injury to the odontoblastic layer was greater, but numerical renewal of the odontoblastic layer began earlier in etched cavities compared to unetched cavities. PMID:17044256

  20. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    PubMed Central

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

    0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  1. Bone growth enhancement in vivo on press-fit titanium alloy implants with acid etched microtexture.

    PubMed

    Daugaard, Henrik; Elmengaard, Brian; Bechtold, Joan E; Soballe, Kjeld

    2008-11-01

    Early bone ongrowth secures long-term fixation of primary implants inserted without cement. Implant surfaces roughened with a texture on the micrometer scale are known to be osseoconductive. The aim of this study was to evaluate the bone formation at the surface of acid etched implants modified on the micro-scale. We compared implants with a nonparticulate texture made by chemical milling (hydrofluoric acid, nitric acid) (control) with implants that had a dual acid etched (hydrofluoric acid, hydrochloric acid) microtexture surface superimposed on the primary chemically milled texture. We used an experimental joint replacement model with cylindrical titanium implants (Ti-6Al-4V) inserted paired and press-fit in cancellous tibia metaphyseal bone of eight canines for 4 weeks and evaluated by histomorphometric quantification. A significant twofold median increase was seen for bone ongrowth on the acid etched surface [median, 36.1% (interquartile range, 24.3-44.6%)] compared to the control [18.4% (15.6-20.4%)]. The percentage of fibrous tissue at the implant surface and adjacent bone was significantly less for dual acid textured implants compared with control implants. These results show that secondary roughening of titanium alloy implant surface by dual acid etching increases bone formation at the implant bone interface. PMID:18186059

  2. Bone growth enhancement in vivo on press-fit titanium alloy implants with acid etched microtexture

    PubMed Central

    Daugaard, Henrik; Elmengaard, Brian; Bechtold, Joan E.; Soballe, Kjeld

    2013-01-01

    Early bone ongrowth secures long-term fixation of primary implants inserted without cement. Implant surfaces roughened with a texture on the micrometer scale are known to be osseoconductive. The aim of this study was to evaluate the bone formation at the surface of acid etched implants modified on the micro-scale. We compared implants with a nonparticulate texture made by chemical milling (hydrofluoric acid, nitric acid) (control) with implants that had a dual acid etched (hydrofluoric acid, hydrochloric acid) microtexture surface superimposed on the primary chemically milled texture. We used an experimental joint replacement model with cylindrical titanium implants (Ti-6Al-4V) inserted paired and press-fit in cancellous tibia metaphyseal bone of eight canines for 4 weeks and evaluated by histomorphometric quantification. A significant twofold median increase was seen for bone ongrowth on the acid etched surface [median, 36.1% (interquartile range, 24.3–44.6%)] compared to the control [18.4% (15.6–20.4%)]. The percentage of fibrous tissue at the implant surface and adjacent bone was significantly less for dual acid textured implants compared with control implants. These results show that secondary roughening of titanium alloy implant surface by dual acid etching increases bone formation at the implant bone interface. PMID:18186059

  3. Bone contact around acid-etched implants: a histological and histomorphometrical evaluation of two human-retrieved implants.

    PubMed

    Degidi, Marco; Petrone, Giovanna; Iezzi, Giovanna; Piattelli, Adriano

    2003-01-01

    The surface characteristics of dental implants play an important role in their clinical success. One of the most important surface characteristics of implants is their surface topography or roughness. Many techniques for preparing dental implant surfaces are in clinical use: turning, plasma spraying, coating, abrasive blasting, acid etching, and electropolishing. The Osseotite surface is prepared by a process of thermal dual etching with hydrochloric and sulfuric acid, which results in a clean, highly detailed surface texture devoid of entrapped foreign material and impurities. This seems to enhance fibrin attachment to the implant surface during the clotting process. The authors retrieved 2 Osseotite implants after 6 months to repair damage to the inferior alveolar nerve. Histologically, both implants appeared to be surrounded by newly formed bone. No gaps or fibrous tissues were present at the interface. The mean bone-implant contact percentage was 61.3% (+/- 3.8%). PMID:12614080

  4. Evaluating EDTA as a substitute for phosphoric acid-etching of enamel and dentin.

    PubMed

    Imbery, Terence A; Kennedy, Matthew; Janus, Charles; Moon, Peter C

    2012-01-01

    Matrix metalloproteinases (MMPs) are proteolytic enzymes released when dentin is acid-etched. The enzymes are capable of destroying unprotected collagen fibrils that are not encapsulated by the dentin adhesive. Chlorhexidine applied after etching inhibits the activation of released MMPs, whereas neutral ethylenediamine tetra-acetic acid (EDTA) prevents the release of MMPs. The purpose of this study was to determine if conditioning enamel and dentin with EDTA can be a substitute for treating acid-etching enamel and dentin with chlorhexidine. A column of composite resin was bonded to enamel and dentin after conditioning. Shear bond strengths were evaluated after 48 hours and after accelerated aging for three hours in 12% sodium hypochlorite. Shear bond strengths ranged from 15.6 MP a for accelerated aged EDTA enamel specimens to 26.8 MPa for dentin conditioned with EDTA and tested after 48 hours. A three-way ANOVA and a Tukey HSD test found statistically significant differences among the eight groups and the three independent variables (P < 0.05). EDTA was successfully substituted for phosphoric acid-etched enamel and dentin treated with chlorhexidine. Interactions of conditioning agent and aging were significant for dentin but not for enamel. In an effort to reduce the detrimental effects of MMPs, conditioning enamel and dentin with EDTA is an alternative to treating acid-etched dentin and enamel with chlorhexidine.

  5. The removal torque of titanium screw inserted in rabbit tibia treated by dual acid etching.

    PubMed

    Cho, Sung-Am; Park, Kyung-Tae

    2003-09-01

    Chemical acid etching alone of the titanium implant surface have the potential to greatly enhance osseointegration without adding particulate matter (e.g. TPS or hydroxyapatite) or embedding surface contaminants (e.g. grit particles). The aims of the present study were to evaluate any differences between the machined and dual acid etching implants with the removal torque as well as topographic analysis. A total of 40 custom-made, screw-shaped, commercially pure titanium implants with length of 5 mm and an outer diameter of 3.75 mm were divided into 4 groups, 10 screws in each, and chemical modification of the titanium implant surfaces were achieved using HF and HCl/H(2)SO(4) dual acid etching. The first exposure was to hydrofluoric acid and the second was to a combination of hydrochloric acid and sulfuric acid. The tibia metaphysics was exposed by incisions through the skin, fascia, and periosteum. One implant of each group was inserted in every rabbit, 2 in each proximal tibia metaphysics. Every rabbit received 3 implants with acid etched surfaces and 1 implant with a machined surface. Twelve weeks post-surgically, 7 rabbits were sacrificed, Subsequently, the leg was stabilized and the implant was removed under reverse torque rotation with a digital torque gauge (Mark-10 Corporation, USA) (Fig. 1). Twelve weeks after implant placement, the removal torque mean values were the dual acid etched implants (24%HF+HCl/H(2)SO(4), group C) required a higher average force (34.7 Ncm), than the machined surface implants (group A) (p=0.045) (Mann-Whiteney test). Scanning electron micrographs of acid etching of the titanium surface created an even distribution of very small (1-2 microm) peaks and valleys, while machining of the titanium surface created typical microscopically grooved surface characteristics. Nonetheless, there was no difference in surface topography between each acid etched implant groups. Therefore, chemically acid etching implant surfaces have higher

  6. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm × 5 mm × 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37℃ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (α=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 ± 1.94 MPa) and Group 3 (3.65 ± 1.87 MPa) than in Control group (1.95 ± 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 ± 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 ± 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  7. Immunohistochemical and ultrastructural evaluation of the effects of phosphoric acid etching on dentin proteoglycans.

    PubMed

    Oyarzún, A; Rathkamp, H; Dreyer, E

    2000-12-01

    It has been reported that phosphoric acid (PA) produces structural and molecular alterations in dentin collagen fibrils; however, no relevant information exists on the influence of etching with PA on dentin non-collagenous macromolecules. The present study investigated, by immunohistochemistry and ultrastructural histochemistry, the behavior of dentin proteoglycans (PG) after etching human dentin samples with 35% PA gel (thickened with colloidal silica) or with a 35% PA liquid for 15, 30 and 120 s. Immunolabeling with a mouse monoclonal anti-chondroitin sulfate antibody demonstrated that glycosaminoglycans (GAG) were preserved within dentinal tubules opened to the surface after etching with PA gel. In addition, the cationic tracer polyethyleneimine, used for the ultramicroscopic localization of PG anionic sites, revealed that treatment of dentin samples with PA gel preserved the polyanionic peritubular PG in the etched area. On the other hand, etching with the PA liquid produced loss of peritubular GAG and PG anionic sites in the etched dentin surface. The results obtained indicated that similar concentrations of PA in gel or liquid formulations differently affect the organization of dentin PG. The clinical significance of these in vitro findings and the structural and molecular interactions of dentin PG with adhesive systems are still unknown.

  8. Improving UV laser damage threshold of fused silica optics by wet chemical etching technique

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Li, Yaguo; Yuan, Zhigang; Wang, Jian; Xu, Qiao; Yang, Wei

    2015-07-01

    Fused silica is widely used in high-power laser systems because of its good optical performance and mechanical properties. However, laser damage initiation and growth induced by 355 nm laser illumination in optical elements have become a bottleneck in the development of high energy laser system. In order to improve the laser-induced damage threshold (LIDT), the fused silica optics were treated by two types of HF-based etchants: 1.7%wt. HF acid and buffer oxide etchant (BOE: the mixture of 0.4%wt. HF and 12%wt. NH4F), respectively, for varied etching time. Damage testing shows that both the etchants increase the damage threshold at a certain depth of material removal, but further removal of material lowers the LIDT markedly. The etching rates of both etchants keep steady in our processing procedure, ~58 μg/min and ~85 μg/min, respectively. The micro-surface roughness (RMS and PV) increases as etching time extends. The hardness (H) and Young's modulus (E) of the fused silica etched for diverse time, measured by nano-indenter, show no solid evidence that LIDT can be related to hardness or Young's modulus.

  9. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  10. Effect of acid etching of glass ionomer cement surface on the microleakage of sandwich restorations.

    PubMed

    Bona, Alvaro Della; Pinzetta, Caroline; Rosa, Vinícius

    2007-06-01

    The purposes of this study were to evaluate the sealing ability of different glass ionomer cements (GICs) used for sandwich restorations and to assess the effect of acid etching of GIC on microleakage at GIC-resin composite interface. Forty cavities were prepared on the proximal surfaces of 20 permanent human premolars (2 cavities per tooth), assigned to 4 groups (n=10) and restored as follows: Group CIE - conventional GIC (CI) was applied onto the axial and cervical cavity walls, allowed setting for 5 min and acid etched (E) along the cavity margins with 35% phosphoric acid for 15 s, washed for 30 s and water was blotted; the adhesive system was applied and light cured for 10 s, completing the restoration with composite resin light cured for 40 s; Group CIN - same as Group CIE, except for acid etching of the CI surface; Group RME - same as CIE, but using a resin modified GIC (RMGIC); Group RMN - same as Group RME, except for acid etching of the RMGIC surface. Specimens were soaked in 1% methylene blue dye solution at 24 degrees C for 24 h, rinsed under running water for 1 h, bisected longitudinally and dye penetration was measured following the ISO/TS 11405-2003 standard. Results were statistically analyzed by Kruskal-Wallis and chi-square tests (a=0.05). Dye penetration scores were as follow: CIE - 2.5; CIN - 2.5; RME - 0.9; and RMN - 0.6. The results suggest that phosphoric acid etching of GIC prior to the placement of composite resin does not improve the sealing ability of sandwich restorations. The RMGIC was more effective in preventing dye penetration at the GIC-resin composite-dentin interfaces than CI.

  11. In vivo Acid Etching Effect on Bacteria within Caries-Affected Dentin

    PubMed Central

    Gu, F.; Bresciani, E.; Barata, T.J.; Fagundes, T.C.; Navarro, M.F.; Dickens, S.H.; Fenno, J.C.; Peters, M.C.

    2010-01-01

    Acid etching procedures may disrupt residual bacteria and contribute to the success of incomplete caries removal followed by adhesive restoration. This study evaluated the in vivo effect of acid etching on cariogenic bacterial activity within affected dentin after minimally invasive treatment of caries lesions. Twenty-eight carious permanent teeth received standardized selective caries removal and random acid etch treatment (E) or not (NE) prior to adhesive restoration. Baseline and 3-month dentin biopsies were collected. The number of bacteria and activity of total bacterial cells and Streptococcus mutans were determined by quantitative PCR and RT-PCR. No statistically significant differences were observed in total bacterial number and activity between E and NE treatments (p > 0.3008). For NE, however, the residual S. mutans bacterial cells were reduced (p = 0.0027), while the activity per cell was significantly increased (p = 0.0010) after reentry at 3 months after restoration. This effect was not observed in group E. Although no significant differences were found between groups, this study suggests that acid etching of affected dentin prior to adhesive restoration may directly or indirectly have an inhibitive effect on the activity of residual cariogenic bacteria. Further research is required to investigate this potential effect. PMID:20861631

  12. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    PubMed Central

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  13. Reactive ion etching (RIE) technique for application in crystalline silicon solar cells

    SciTech Connect

    Yoo, Jinsu

    2010-04-15

    Saw damage removal (SDR) and texturing by conventional wet chemical processes with alkali solution etch about 20 micron of silicon wafer on both sides, resulting in thin wafers with which solar cell processing is difficult. Reactive ion etching (RIE) for silicon surface texturing is very effective in reducing surface reflectance of thin crystalline silicon wafers by trapping the light of longer wavelength. High efficiency solar cells were fabricated during this study using optimized RIE. Saw damage removal (SDR) with acidic mixture followed by RIE-texturing showed the decrease in silicon loss by {proportional_to}67% and {proportional_to}70% compared to conventional SDR and texturing by alkaline solution. Also, the crystalline silicon solar cells fabricated by using RIE-texturing showed conversion efficiency as high as 16.7% and 16.1% compared with 16.2%, which was obtained in the case of the cell fabricated with SDR and texturing with NaOH solution. (author)

  14. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  15. Temperature Rise Induced by Light Curing Unit Can Shorten Enamel Acid-Etching Time

    PubMed Central

    Najafi Abrandabadi, Ahmad; Sheikh-Al-Eslamian, Seyedeh Mahsa; Panahandeh, Narges

    2015-01-01

    Objectives: The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED) light curing unit on the enamel etching time. Materials and Methods: Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously). The micro shear bond strength (μSBS) of composite resin to enamel was measured. Results: The mean μSBS values ± standard deviation were 51.28±2.35, 40.47±2.75 and 50.00±2.59 MPa in groups 1, 2 and 3, respectively. There was a significant difference between groups 1 and 2 (P=0.013) and between groups 2 and 3 (P=0.032) in this respect, while there was no difference between groups 1 and 3 (P=0.932). Conclusion: Simultaneous application of phosphoric acid gel over enamel surface and light irradiation using a LED light curing unit decreased enamel etching time to five seconds without compromising the μSBS. PMID:27559352

  16. Phosphoric acid-etching promotes bond strength and formation of acid-base resistant zone on enamel.

    PubMed

    Li, N; Nikaido, T; Alireza, S; Takagaki, T; Chen, J-H; Tagami, J

    2013-01-01

    This study examined the effect of phosphoric acid (PA) etching on the bond strength and acid-base resistant zone (ABRZ) formation of a two-step self-etching adhesive (SEA) system to enamel. An etch-and-rinse adhesive (EAR) system Single Bond (SB) and a two-step SEA system Clearfil SE Bond (SE) were used. Human teeth were randomly divided into four groups according to different adhesive treatments: 1) SB; 2) SE; 3) 35% PA etching→SE primer→SE adhesive (PA/SEp+a); (4) 35% PA etching→SE adhesive (PA/SEa). Microshear bond strength to enamel was measured and then statistically analyzed using one-way analysis of variance and the Tukey honestly significant difference test. The failure mode was recorded and analyzed by χ( 2 ) test. The etching pattern of the enamel surface was observed with scanning electron microscope (SEM). The bonded interface was exposed to a demineralizing solution (pH=4.5) for 4.5 hours and then 5% sodium hypochlorite with ultrasonication for 30 minutes. After argon-ion etching, the interfacial ultrastructure was observed using SEM. The microshear bond strength to enamel of the SE group was significantly lower (p<0.05) than that of the three PA-etched groups, although the latter three were not significantly different from one another. The ABRZ was detected in all the groups. In morphological observation, the ABRZ in the three PA-etched groups were obviously thicker compared with the SE group with an irregular wave-shaped edge.

  17. Magnetic field sensor using the fiber loop ring-down technique and an etched fiber coated with magnetic fluid.

    PubMed

    Shen, Tao; Feng, Yue; Sun, Binchao; Wei, Xinlao

    2016-02-01

    The fiber loop ring-down spectroscopy technique is introduced into the evanescent-field-based sensing scheme in order to create a new type of fiber-based magnetic field sensor. As a consequence, the sensitivity and stability of the magnetic field sensing system are significantly enhanced. The sensor head is constructed using a section of a single-mode fiber with its cladding partially etched. The process of fiber etching is described in detail, and the relationship between the diameter of the etched fiber and the etching time is experimentally investigated. After adopting the appropriate size of the etched fiber, the final experimental results show that the magnetic field strength has a well-defined linear relationship with the inverse of the ring-down time τ over a range of 30 mT with a sensitivity of 95.5 ns/mT.

  18. Magnetic field sensor using the fiber loop ring-down technique and an etched fiber coated with magnetic fluid.

    PubMed

    Shen, Tao; Feng, Yue; Sun, Binchao; Wei, Xinlao

    2016-02-01

    The fiber loop ring-down spectroscopy technique is introduced into the evanescent-field-based sensing scheme in order to create a new type of fiber-based magnetic field sensor. As a consequence, the sensitivity and stability of the magnetic field sensing system are significantly enhanced. The sensor head is constructed using a section of a single-mode fiber with its cladding partially etched. The process of fiber etching is described in detail, and the relationship between the diameter of the etched fiber and the etching time is experimentally investigated. After adopting the appropriate size of the etched fiber, the final experimental results show that the magnetic field strength has a well-defined linear relationship with the inverse of the ring-down time τ over a range of 30 mT with a sensitivity of 95.5 ns/mT. PMID:26836067

  19. Effect of EDTA and Phosphoric Acid Pretreatment on the Bonding Effectiveness of Self-Etch Adhesives to Ground Enamel

    PubMed Central

    Ibrahim, Ihab M.; Elkassas, Dina W.; Yousry, Mai M.

    2010-01-01

    Objectives: This in vitro study determined the effect of enamel pretreatment with phosphoric acid and ethylenediaminetetraacetic acid (EDTA) on the bond strength of strong, intermediary strong, and mild self-etching adhesive systems. Methods: Ninety sound human premolars were used. Resin composite cylinders were bonded to flat ground enamel surfaces using three self-etching adhesive systems: strong Adper Prompt L-Pop (pH=0.9–1.0), intermediary strong AdheSE (pH=1.6–1.7), and mild Frog (pH=2). Adhesive systems were applied either according to manufacturer instructions (control) or after pretreatment with either phosphoric acid or EDTA (n=10). After 24 hours, shear bond strength was tested using a universal testing machine at a cross-head speed of 0.5 mm/minute. Ultra-morphological characterization of the surface topography and resin/enamel interfaces as well as representative fractured enamel specimens were examined using scanning electron microscopy (SEM). Results: Neither surface pretreatment statistically increased the mean shear bond strength values of either the strong or the intermediary strong self-etching adhesive systems. However, phosphoric acid pretreatment significantly increased the mean shear bond strength values of the mild self-etching adhesive system. SEM examination of enamel surface topography showed that phosphoric acid pretreatment deepened the same etching pattern of the strong and intermediary strong adhesive systems but converted the irregular etching pattern of the mild self-etching adhesive system to a regular etching pattern. SEM examination of the resin/enamel interface revealed that deepening of the etching pattern was consistent with increase in the length of resin tags. EDTA pretreatment had a negligible effect on ultra-morphological features. Conclusions: Use of phosphoric acid pretreatment can be beneficial with mild self-etching adhesive systems for bonding to enamel. PMID:20922162

  20. Hydrofluoric acid etched stainless steel wire for solid-phase microextraction.

    PubMed

    Xu, Hua-Ling; Li, Yan; Jiang, Dong-Qing; Yan, Xiu-Ping

    2009-06-15

    Stainless steel wire has been widely used as the substrate of solid-phase microextraction (SPME) fibers to overcome the shortcomings of conventional silica fibers such as fragility, by many researchers. However, in previous reports various sorbent coatings are always required in conjunction with the stainless steel wire for SPME. In this work, we report the bare stainless steel wire for SPME without the need for any additional coatings taking advantage of its high mechanical and thermal stability. To evaluate the performance of stainless steel wire for SPME, polycyclic aromatic hydrocarbons (PAHs), benzene, toluene, ethylbenzene, chlorobenzene, n-propylbenzene, aniline, phenol, n-hexane, n-octane, n-decane, n-undecane, n-dodecane, chloroform, trichloroethylene, n-octanol, and butanol were tested as analytes. Although the stainless steel wire had almost no extraction capability toward the tested analytes before etching, it did exhibit high affinity to the tested PAHs after etching with hydrofluoric acid. The etched stainless steel wire gave a much bigger enhancement factor (2541-3981) for the PAHs than the other analytes studied (< or = 515). Etching with hydrofluoric acid produced a porous and flower-like structure with Fe(2)O(3), FeF(3), Cr(2)O(3), and CrF(2) on the surface of the stainless steel wire, giving high affinity to the PAHs due to cation-pi interaction. On the basis of the high selectivity of the etched stainless steel wire for PAHs, a new SPME method was developed for gas chromatography with flame ionization detection to determine PAHs with the detection limits of 0.24-0.63 microg L(-1). The precision for six replicate extractions using one SPME fiber ranged from 2.9% to 5.3%. The fiber-to-fiber reproducibility for three parallel prepared fibers was 4.3-8.8%. One etched stainless steel wire can stand over 250 cycles of SPME without significant loss of extraction efficiency. The developed etched stainless steel wire is very stable, highly selective, and

  1. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity

  2. Development of an electrochemical micromachining instrument for the confined etching techniques.

    PubMed

    Zhou, Hang; Lai, Lei-Jie; Zhao, Xiang-Hui; Zhu, Li-Min

    2014-04-01

    This study proposes an electrochemical micromachining instrument for two confined etching techniques, namely, confined etchant layer technique (CELT) and electrochemical wet stamping (E-WETS). The proposed instrument consists of a granite bridge base, a Z-axis coarse/fine dual stage, and a force sensor. The Z-axis coarse/fine dual stage controls the vertical movement of the substrate with nanometer accuracy. The force sensor measures the contact force between the mold and the substrate. A contact detection method based on a digital lock-in amplifier is developed to make the mold-substrate contact within a five-nanometer range in CELT, and a force feedback controller is implemented to keep the contact force in E-WETS at a constant value with a noise of less than 0.2 mN. With the use of the confined etching techniques, a microlens array and a curvilinear ridge microstructure are successfully fabricated with high accuracy, thus demonstrating the promising performance of the proposed micromachining instrument. PMID:24784674

  3. Development of an electrochemical micromachining instrument for the confined etching techniques

    NASA Astrophysics Data System (ADS)

    Zhou, Hang; Lai, Lei-Jie; Zhao, Xiang-Hui; Zhu, Li-Min

    2014-04-01

    This study proposes an electrochemical micromachining instrument for two confined etching techniques, namely, confined etchant layer technique (CELT) and electrochemical wet stamping (E-WETS). The proposed instrument consists of a granite bridge base, a Z-axis coarse/fine dual stage, and a force sensor. The Z-axis coarse/fine dual stage controls the vertical movement of the substrate with nanometer accuracy. The force sensor measures the contact force between the mold and the substrate. A contact detection method based on a digital lock-in amplifier is developed to make the mold-substrate contact within a five-nanometer range in CELT, and a force feedback controller is implemented to keep the contact force in E-WETS at a constant value with a noise of less than 0.2 mN. With the use of the confined etching techniques, a microlens array and a curvilinear ridge microstructure are successfully fabricated with high accuracy, thus demonstrating the promising performance of the proposed micromachining instrument.

  4. Development of an electrochemical micromachining instrument for the confined etching techniques.

    PubMed

    Zhou, Hang; Lai, Lei-Jie; Zhao, Xiang-Hui; Zhu, Li-Min

    2014-04-01

    This study proposes an electrochemical micromachining instrument for two confined etching techniques, namely, confined etchant layer technique (CELT) and electrochemical wet stamping (E-WETS). The proposed instrument consists of a granite bridge base, a Z-axis coarse/fine dual stage, and a force sensor. The Z-axis coarse/fine dual stage controls the vertical movement of the substrate with nanometer accuracy. The force sensor measures the contact force between the mold and the substrate. A contact detection method based on a digital lock-in amplifier is developed to make the mold-substrate contact within a five-nanometer range in CELT, and a force feedback controller is implemented to keep the contact force in E-WETS at a constant value with a noise of less than 0.2 mN. With the use of the confined etching techniques, a microlens array and a curvilinear ridge microstructure are successfully fabricated with high accuracy, thus demonstrating the promising performance of the proposed micromachining instrument.

  5. Scanning Acoustic Microscopy Investigation of Frequency-Dependent Reflectance of Acid-Etched Human Dentin Using Homotopic Measurements

    PubMed Central

    Marangos, Orestes; Misra, Anil; Spencer, Paulette; Katz, J. Lawrence

    2013-01-01

    Composite restorations in modern restorative dentistry rely on the bond formed in the adhesive-infiltrated acid-etched dentin. The physical characteristics of etched dentin are, therefore, of paramount interest. However, characterization of the acid-etched zone in its natural state is fraught with problems stemming from a variety of sources including its narrow size, the presence of water, heterogeneity, and spatial scale dependency. We have developed a novel homotopic (same location) measurement methodology utilizing scanning acoustic microscopy (SAM). Homotopic measurements with SAM overcome the problems encountered by other characterization/ imaging methods. These measurements provide us with acoustic reflectance at the same location of both the pre- and post-etched dentin in its natural state. We have applied this methodology for in vitro measurements on dentin samples. Fourier spectra from acid-etched dentin showed amplitude reduction and shifts of the central frequency that were location dependent. Through calibration, the acoustic reflectance of acid-etched dentin was found to have complex and non-monotonic frequency dependence. These data suggest that acid-etching of dentin results in a near-surface graded layer of varying thickness and property gradations. The measurement methodology described in this paper can be applied to systematically characterize mechanical properties of heterogeneous soft layers and interfaces in biological materials. PMID:21429849

  6. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    PubMed Central

    Hoshing, Upendra A; Patil, Suvarna; Medha, Ashish; Bandekar, Siddhesh Dattatray

    2014-01-01

    Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M). In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M) was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply) was applied onto the test areas as a 3 × 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 ± 0.66MPa, range 25.155 to 27.150 MPa) was significantly higher (P < 0.01) than for laser-etched enamel (16.23 ± 0.71MPa, range 15.233 to 17.334 MPa). Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching. PMID:25125842

  7. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  8. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    PubMed Central

    STEINHAUSER, Henrique Caballero; TURSSI, Cecília Pedroso; FRANÇA, Fabiana Mantovani Gomes; do AMARAL, Flávia Lucisano Botelho; BASTING, Roberta Tarkany

    2014-01-01

    Objective The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8): C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results One-way ANOVA test showed no significant difference between treatments (p=0.3197) and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed. PMID:24676577

  9. Morphology and Morphogenesis of Sindbis Virus as Seen with Freeze-Etching Techniques

    PubMed Central

    Brown, Dennis T.; Waite, Marilynn R. F.; Pfefferkorn, Elmer R.

    1972-01-01

    Freeze-etch electron microscope studies of the morphogenesis and morphology of Sindbis virus confirmed results obtained by other workers employing thin-sectioning techniques. The 68-nm virion was found to have a nucleocapsid 36 nm in diameter surrounded by a double-layered, unit membrane. The membranous envelope is acquired as the capsid buds through the plasma membrane of the infected cell. The freeze-etch technique also provided the following new information. (i) At any one time, budding occurs in patches rather than evenly over the cell surface. (ii) The nucleocapsid is composed of capsomers 7 nm in diameter. (iii) The capsid interacts strongly with the membrane, both prior to budding and after maturation. (iv) The 7- to 10-nm particles characteristic of the internal faces of plasma membranes, which presumably represent host membrane proteins, are present in early stages of budding but disappear as morphogenesis progresses. (v) Fusion of the cell membrane at the base of the budding virion is a two-step process; the inner leaflet fuses into a sphere before the outer one. (vi) The outer surface of the viral envelope is covered with 4-nm subunits with a center-to-center spacing of 6 nm. Images PMID:4672393

  10. Investigation of Acid-Etched CO2 Laser Ablated Enamel Surfaces Using Polarization Sensitive Optical Coherence Tomography

    PubMed Central

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10–15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 5–10 seconds. PMID:23539418

  11. Investigation of acid-etched CO2 laser ablated enamel surfaces using polarization sensitive optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10-15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (P<0.05). A 37.5% phosphoric acid etch removed the laser modified enamel layer after 5-10 seconds.

  12. Micro/nanofabrication of poly(L-lactic acid) using focused ion beam direct etching

    NASA Astrophysics Data System (ADS)

    Oyama, Tomoko Gowa; Hinata, Toru; Nagasawa, Naotsugu; Oshima, Akihiro; Washio, Masakazu; Tagawa, Seiichi; Taguchi, Mitsumasa

    2013-10-01

    Micro/nanofabrication of biocompatible and biodegradable poly(L-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  13. Development and application of the electrochemical etching technique. Annual progress report

    SciTech Connect

    Not Available

    1980-08-01

    This annual progress report documents further advances in the development and application of electrochemical etching of polycarbonate foils (ECEPF) for fast, intermediate, and thermal neutron dosimetry as well as alpha particle dosimetry. The fast (> 1.1 MeV) and thermal neutron dosimetry techniques were applied to a thorough investigation of the neutron contamination inherent in and about the primary x-ray beam of several medical therapy electron accelerators. Because of the small size of ECEPF dosimeters in comparison to other neutron meters, they have an unusually low perturbation of the radiation field under measurement. Due to this small size and the increased sensitivity of the ECEPF dosimeter over current techniques of measuring neutrons in a high photon field, the fast neutron contamination in the primary x-ray beam of all the investigated accelerators was measured with precision and found to be greater than that suggested by the other, more common, neutron dosimetry methods.

  14. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  15. Nitric-phosphoric acid etching effects on the surface chemical composition of CdTe thin film.

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; Ding, Huanjun; Xia, Wei; Lin, Hao; Tang, Ching W.; Gao, Yongli

    2009-03-01

    Nitric-phosphoric (NP) acid etching has been regarded as one of the most successful methods for the formation of low resistance back contact with the metal electrode in CdTe based solar cells. We report back surface chemical composition for eight different durations of NP etching of CdTe polycrystalline thin film. We studied the surfaces with x-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IEPS) and atomic force microscopy (AFM). Etching dependence on the back surface composition and electronic structure was observed. Valence and conduction band shifts relative to the Fermi level of the system with different etching duration were analyzed. The sample was left in open ambient condition for three weeks and XPS data were obtained again in order to study the difference in surface chemical composition with the pristine CdTe film. Unetched and highly etched part of the sample were sputtered and the depth profile analyzed.

  16. Observation of thermally etched grain boundaries with the FIB/TEM technique

    SciTech Connect

    Palizdar, Y.; San Martin, D.; Ward, M.; Cochrane, R.C.; Brydson, R.; Scott, A.J.

    2013-10-15

    Thermal etching is a method which is able to reveal and characterize grain boundaries, twins or dislocation structures and determine parameters such as grain boundary energies, surface diffusivities or study phase transformations in steels, intermetallics or ceramic materials. This method relies on the preferential transfer of matter away from grain boundaries on a polished sample during heating at high temperatures in an inert/vacuum atmosphere. The evaporation/diffusion of atoms at high temperatures results in the formation of grooves at the intersections of the planes of grain/twin boundaries with the polished surface. This work describes how the combined use of Focussed Ion Beam and Transmission Electron Microscopy can be used to characterize not only the grooves and their profile with the surface, but also the grain boundary line below the groove, this method being complementary to the commonly used scanning probe techniques. - Highlights: • Thermally etched low-carbon steel samples have been characterized by FIB/TEM • Grain boundary (GB) lines below the groove have been characterized in this way • Absence of ghost traces and large θ angle suggests that GB are not stationary but mobile • Observations correlate well with previous works and Mullins' investigations [22].

  17. Effect of hydrofluoric acid etching duration on the roughness and flexural strength of a lithium disilicate-based glass ceramic.

    PubMed

    Zogheib, Lucas Villaça; Bona, Alvaro Della; Kimpara, Estevão Tomomitsu; McCabe, John F

    2011-01-01

    The aim of this study was to examine the effect of different acid etching times on the surface roughness and flexural strength of a lithium disilicate-based glass ceramic. Ceramic bar-shaped specimens (16 mm x 2 mm x 2 mm) were produced from ceramic blocks. All specimens were polished and sonically cleaned in distilled water. Specimens were randomly divided into 5 groups (n=15). Group A (control) no treatment. Groups B-E were etched with 4.9% hydrofluoric acid (HF) for 4 different etching periods: 20 s, 60 s, 90 s and 180 s, respectively. Etched surfaces were observed under scanning electron microscopy. Surface profilometry was used to examine the roughness of the etched ceramic surfaces, and the specimens were loaded to failure using a 3-point bending test to determine the flexural strength. Data were analyzed using one-way ANOVA and Tukey's test (?=0.05). All etching periods produced significantly rougher surfaces than the control group (p<0.05). Roughness values increased with the increase of the etching time. The mean flexural strength values were (MPa): A=417 ± 55; B=367 ± 68; C=363 ± 84; D=329 ± 70; and E=314 ± 62. HF etching significantly reduced the mean flexural strength as the etching time increased (p=0.003). In conclusion, the findings of this study showed that the increase of HF etching time affected the surface roughness and the flexural strength of a lithium disilicate-based glass ceramic, confirming the study hypothesis.

  18. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    PubMed

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-05-27

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

  19. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    PubMed Central

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A.; Divakar, Darshan Devang; Matinlinna, Jukka P.; Vallittu, Pekka K.

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  20. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  1. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    NASA Astrophysics Data System (ADS)

    Liu, Wenyong; Sun, Linyu; Luo, Yuting; Wu, Ruomei; Jiang, Haiyun; Chen, Yi; Zeng, Guangsheng; Liu, Yuejun

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157̊. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159̊ by coating PP-g-MAH, while the CA was only 141̊ by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro-nano concave-convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro-nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  2. Color Stability of Enamel following Different Acid Etching and Color Exposure Times

    PubMed Central

    Jahanbin, Arezoo; Basafa, Mohammad; Moazzami, Mostafa; Basafa, Behnoush; Eslami, Neda

    2014-01-01

    Background and aims. The aim of this study was to evaluate the effect of different etching times on enamel color stability after immediate versus delayed exposure to colored artificial saliva (CAS). Materials and methods. Human first premolars were divided into five groups of twenty. A colorimeter was used according to the CIE system on the mid-buccal and mid-lingual surfaces to evaluate initial tooth color. Samples in group A remained unetched. In groups B to E, buccal and lingual surfaces were initially etched with phosphoric acid for 15 and 60 seconds, respectively. Then, the samples in groups A and C were immersed in colored artificial saliva (cola+saliva). In group B, the teeth were immersed in simple artificial saliva (AS). Samples in groups D and E were immersed in AS for 24 and 72 hours, respectively before being immersed in colored AS. The teeth were immersed for one month in each solution before color measurement. During the test period, the teeth were retrieved from the staining solution and stored in AS for five minutes. This was repeated 60 times. Color changes of buccal and lingual surfaces were calculated. Kruskal-Wallis and Wilcoxon tests were used for statistical analysis (α ≤0.05). Results. There were no significant differences between the groups in term of ΔE of buccal (P = 0.148) and lingual surfaces (P = 0.73). Conclusion. Extended time of etching did not result in significant enamel color change. Immediate and delayed exposure of etched enamel to staining solutions did not result in clinically detectable tooth color changes. PMID:25093048

  3. Effect of storage and acid etching on the tensile bond strength of composite resins to glass ionomer cement.

    PubMed

    Mesquita, M F; Domitti, S S; Consani, S; de Goes, M F

    1999-01-01

    This in vitro study evaluates the effect of storage time and acid etching on the tensile bond strength of glass ionomer cement to composite resins. The bonded assemblies were stored at 100% relative humidity and 37 degrees C for 1 hour, 1 day, 1 week, 1 month and 3 months. The test specimen was loaded at tension to failure on an Otto Wolpert-Werke testing instrument with a crosshead speed of 6 mm/min. The results showed a significant statistical difference for etched Vidrion F when compared to etched Ketac Bond at all storage periods. The unetched samples were statistically similar at 3 months, with the highest values for Vidrion F.

  4. The critical barrier to progress in dentine bonding with the etch-and-rinse technique

    PubMed Central

    Brackett, M.G.; Li, N.; Brackett, W.W.; Sword, R.J.; Qi, Y.P.; Niu, L.N.; Pucci, C.R.; Dib, A.; Pashley, D.H.; Tay, F.R.

    2011-01-01

    Objectives The lack of durability in resin–dentine bonds led to the use of chlorhexidine as MMP-inhibitor to prevent the degradation of hybrid layers. Biomimetic remineralisation is a concept-proven approach in preventing the degradation of resin–dentine bonds. The purpose of this study is to examine the integrity of aged resin–dentine interfaces created with a nanofiller-containing etch-and-rinse adhesive after the application of these two approaches. Methods The more established MMP-inhibition approach was examined using a parallel in vivo and in vitro ageing design to facilitate comparison with the biomimetic remineralisation approach using an in vitro ageing design. Specimens bonded without chlorhexidine exhibited extensive degradation of the hybrid layer after 12 months of in vivo ageing. Results Dissolution of nanofillers could be seen within a water-rich zone within the adhesive layer. Although specimens bonded with chlorhexidine exhibited intact hybrid layers, water-rich regions remained in those hybrid layers and degradation of nanofillers occurred within the adhesive layer. Specimens subjected to in vitro biomimetic remineralisation followed by in vitro ageing demonstrated intrafibrillar collagen remineralisation within hybrid layers and deposition of mineral nanocrystals in nanovoids within the adhesive. Conclusions The impact was realized by understanding the lack of an inherent mechanism to remove water from resin–dentine interfaces as the critical barrier to progress in bonding with the etch-and-rinse technique. The experimental biomimetic remineralisation strategy offers a creative solution for incorporating a progressive hydration mechanism to achieve this goal, which warrants its translation into a clinically applicable technique. PMID:21215788

  5. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    NASA Astrophysics Data System (ADS)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  6. Comparative Study of the Effect of Acid Etching on Enamel Surface Roughness between Pumiced and Non-pumiced Teeth

    PubMed Central

    Abreu, Lucas Guimarães; Paiva, Saul Martins; Pretti, Henrique; Lages, Elizabeth Maria Bastos; Júnior, João Batista Novães; Ferreira, Ricardo Alberto Neto

    2015-01-01

    Background: The objective was to perform a comparative analysis of the effect of acid etching on enamel roughness between pumiced and non-pumiced teeth. Materials and Methods: The sample was composed of 32 dental surfaces divided into two groups: Group 1-16 surfaces having received pumice prophylaxis; and Group 2-16 surfaces not having received pumice prophylaxis. The teeth were kept in saline until the first record of surface roughness prior to etching. For each surface, a roughness graph was obtained through trials using a surface roughness tester. This procedure was repeated two more times at different locations for a total of three readings which, later, were converted in a mean value. The teeth were then acid etched with a 37% phosphoric acid for 60 s, rinsed with water, air dried, and tested with the roughness tester again using the same protocol described for baseline. The Quantikov image analysis program was used to measure the length of the graphs. The average value of the lengths was recorded for each surface before and after etching. The increase in roughness caused by acid etching was calculated and compared between groups. Results: The mean increase in roughness caused by the etching was 301 µm (11.37%) in Group 1 and 214 µm (8.33%) in Group 2. No statistically significant difference was found between samples with and without pumice prophylaxis (P = 0.283). Conclusion: The present study showed that the effect of acid etching on enamel roughness was not significantly affected by prior pumice prophylaxis. PMID:26435607

  7. Etch-stop technique for patterning of tunnel junctions for a magnetic field sensor

    NASA Astrophysics Data System (ADS)

    Persson, Anders; Ericson, Fredric; Thornell, Greger; Nguyen, Hugo

    2011-04-01

    Spin-dependent tunnelling devices, e.g. magnetic random access memories and highly sensitive tunnelling magnetoresistance (TMR) sensors, often consist of a large number of magnetic tunnel junctions (MTJs) of uniform quality over the whole device. The uniformity and yield of the fabrication of such a device are therefore very important. A major source of yield loss is the short-circuiting of junctions by redeposition of etch residues. This can be prevented by terminating of the etch in the typically 1 nm thick tunnelling barrier. Here, electron spectroscopy for chemical analysis for monitoring the etching semi-continuously is proposed. The fabrication scheme employs Ar ion milling for etching the MTJs, and photoelectron spectroscopy for analysing the composition of the etched surface in situ. Junctions etched either to or through the barrier were used for this. The quality of the etch stop was investigated using transmission electron microscopy (TEM), and it was confirmed that the etch could be stopped in the MgO barrier. The TEM imaging also showed clear signs of redeposition. Such redeposition was attributed to being partly caused by the reduction of the TMR ratio of the junctions etched through the barrier, which was only 15% as compared with 150% for junctions etched to the barrier. Also, the latter junctions exhibited 2.7 times less noise in the low-frequency regime, resulting in a 27 times improvement of the signal-to-noise ratio with the etch stop. The barrier also proved effective in protecting the bottom contact from oxidation during the capping and contacting of the junctions.

  8. Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

    PubMed

    Ahmad, Muthanna; Grime, Geoffrey W

    2013-04-01

    Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS.

  9. In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

    NASA Astrophysics Data System (ADS)

    Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

    2010-02-01

    Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

  10. Electrical properties of Hg1-xCdxTe by different etching techniques

    NASA Astrophysics Data System (ADS)

    Chen, X. T.; Qiao, H.; Liu, X. Y.; Yang, K. J.

    2015-11-01

    Effects on the electrical properties of HgCdTe photoconductive devices etched by inductively coupled plasma (ICP) based on CH4-Ar mixture, ion beam milling (IBM) and bromine-hydrogen bromide solution (Br2/HBr) have been investigated. Magnetic-field-dependent Hall measurement and optoelectronic performance measurement at liquid nitrogen temperature were performed. Mobility spectrum analysis (MSA) and multicarrier fitting (MCF) were applied to evaluate the carrier characteristics. Sample etched by ICP indicated a higher mobility and the carrier scattering mechanism was dominated by polar optical phonon (POP) which could lead to superior detector performance accordingly. Meanwhile, sample etched by IBM was found to have large amount of electron concentration and sample etched by Br2/HBr showed a very low mobility. The dominant mechanism of Br2/HBr etched sample was ionized impurity scattering for the carriers which meant inferior resultant detector performance.

  11. A Novel Non-lift-off Block Copolymer Nanolithography Technique for Etch-damage Susceptible Magnetic Materials

    NASA Astrophysics Data System (ADS)

    Baruth, A.; Shankar, A.; Walster, K.; Rodwogin, M. D.; Erickson, M. J.; Hillmyer, M. A.; Leighton, C.

    2012-02-01

    Nanolithographic techniques based on self-assembled block copolymer templates offer exceptional potential for fabrication of large-area nanostructure arrays from a wide variety of functional materials. Despite significant progress with control of the template ordering and development of pattern transfer schemes, significant issues exist with common techniques such as lift-off and etching. Here, we demonstrate successful execution of a nanolithographic process based on climate-controlled solvent annealing of easily degradable cylinder-forming poly(styrene-b-lactide) block copolymer films that avoids both lift-off, and some of the most challenging aspects of etching. In particular, our overfill/planarize/etch-back scheme leads to retention of robust ferromagnetism even in 24 nm diameter dots of a material (Ni80Fe20) that is both magnetically soft and susceptible to etch damage. The result is a large-area array of 24 ± 1.6 nm diameter magnetic nanodots with exceptional hexagonally-close-packed long range order that retain their crystallinity and ˜ 70 % of the bulk magnetization. Extensive diffraction, microscopy, magnetometry, and electrical measurements provide detailed characterization of the pattern formation and fidelity. Funded by NSF MRSEC.

  12. Influence of Organic Acids from the Oral Biofilm on the Bond Strength of Self-Etch Adhesives to Dentin.

    PubMed

    Amaral, Cristiane Mariote; Correa, Danielly de Sá; Miragaya, Luciana Meirelles; Silva, Eduardo Moreira da

    2015-10-01

    The aim of this study was to evaluate the microtensile bond strength of self-etch adhesive systems to dentin after storage in acids from oral biofilm. Three adhesive systems were used in the study: a two-step self-etch adhesive for use with a silorane-based resin composite (Filtek P90 adhesive system - P90), a two-step self-etch adhesive (Clearfil SE Bond - CSE) and a one-step self-etch adhesive (Adper Easy One - AEO). The bond strength of these products was evaluated by bonding resin composite (Filtek Z350 for CSE and AEO; and Filtek P90 for P90) to 90 bovine dentin tooth fragments, according to the manufacturer's instructions. After 24 h of water storage at 37 °C, the specimens were sectioned into beams (1 mm2) divided and stored in distilled water, lactic acid and propionic acid, for 7 and 30 days. After storage, the specimens were tested for microtensile bond strength. Data were analyzed by three-way ANOVA and Tukey´s test (α=0.05). CSE presented the highest microtensile bond strength after storage in distilled water for 7 and 30 days. The microtensile bond strength of all adhesive systems was lower after storage in lactic acid and propionic acid than after water storage. Significant difference was not found between storage times. PMID:26647935

  13. Comparative Evaluation of Tensile – Bond Strength of An Orthodontic Adhesive with and without Fluoride Application, After Acid Etching -An Invitro Study

    PubMed Central

    Yugandhar, G; Ramana, I Venkata; Srinivas, K; Yadav, S. Sarjeev Singh

    2015-01-01

    Background Fixed appliances hinder the effective control of plaque accumulation and white spot lesions may develop under the ill fitting bands or adjacent to the stainless steel brackets during orthodontic treatment particularly the etching process. Aims and Objectives Comparative study of tensile bond strength of an orthodontic adhesive with and without fluoride application after acid etching to know the effect of fluoride on bond strength. Materials and Methods This study is carried out on 90 non carious human premolar teeth, and divided in 6 groups with each group of 15 specimens. In those Groups I and IV were control group acid etch treatment, Group II and V is 1.23% APF gel (acid etch plus APF gel treatment,) and group III and VI is 8% SnF2 (acid etch plus SnF2 treatment). Samples of Group I, II and III bond strength were tested after 24 h and groups IV, V and VI after one month on microtechtensometer machine. The scanning electron microscope (SEM) investigation was carried out for the 2 specimens for the control group after acid etch and 4 specimens after acid etch with fluoride application for fluoride groups. Results Control and SnF2 treated groups was found to be nearly similar to the control group whereas APF treated group showed less focal holes than the other 2 groups. Conclusion Fluoride application after acid etching without having an adverse effect on bond strength but we can prevent the white spot lesions and caries. PMID:26023648

  14. Effects of heat treating silane and different etching techniques on glass fiber post push-out bond strength.

    PubMed

    Samimi, P; Mortazavi, V; Salamat, F

    2014-01-01

    The aims of this study were to compare two pretreatment methods of a fiber post and to evaluate the effect of heat treatment to applied silane on the push-out bond strength for different levels of root. In this in vitro study, 40 glass fiber posts were divided into five groups (n=8) according to the kind of surface treatment applied. They were then inserted into extracted and endodontically treated human canines using a self-etch resin cement (Panavia F2.0, Kuraray, Japan). Group HF+S = hydrofluoric acid (HF) etching and silane (S) application; group HF+S+WP = HF etching and heat-treated silane application and warmed posts (WP); group H2O2+S = hydrogen peroxide etching and silane application; group H2O2+S+WP = hydrogen peroxide and heat-treated-silane application and warmed post; and group C, the control group, received no pretreatment. After completion of thermal cycling (1000 cycles, 5-55°C), all specimens were cut horizontally to obtain three sections. Each section was subjected to a push-out test, and the test results were analyzed using two-way analysis of variance, post-hoc Tukey honestly significant difference test, and a paired sample t-test (α=0.05). It was found that bond strength was not statistically influenced by the kind of etching material used (p=0.224), but was significantly affected by heat treatment of applied silane (p<0.001). The interaction between these two factors was not statistically significant (p=0.142). Group HF+S+WP showed the highest bond strength (12.56±1.73 MPa) (p<0.05). Scanning electron microscopy revealed the effect of the different treatments on the surface characteristics of posts. In the four pretreated groups, the bond strength decreased significantly from the coronal to the apical root canal sections (p≤0.05). The results of this study show that the use of heat-treated silane significantly enhances the push-out bond strength of the fiber posts to root. HF acid etching with heat-treated silane application led to the

  15. HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis

    NASA Astrophysics Data System (ADS)

    Liu, Nanliu; Cheng, Yutian; Wu, Jiejun; Li, Xingbin; Yu, Tongjun; Xiong, Huan; Li, Wenhui; Chen, Jiao; Zhang, Guoyi

    2016-11-01

    In this paper, crack-free 2-inch bulk GaN wafer with the thickness up to 3 mm was obtained by HVPE homoepitaxy. A new method of acid wet etching was used to pre-treat GaN substrate before re-growth. The formation of the mesh-like subsurface crack and interface layer were found to be suppressed between the re-growth layer and as-grown GaN substrate. EDS and time varied contact angle measurement proved that chemical etching would decrease the oxygen related surface adsorption and increase atoms diffusion length during HVPE homoepitaxial growth. Moreover, Morphology, Low temperature photoluminescence measurements indicated a reduction in stress of wet etching treated as-grown GaN substrate due to etching effect on its N face. High quality bulk GaN with the dislocation density of 1×106 cm-2 was achieved by using wet etching and HVPE multiple re-growth. It would offer a simple method to obtain bulk GaN with thicker layer and high quality.

  16. Comparison of dry-etch techniques for GaN, InN, and AlN

    SciTech Connect

    Shul, R.J.; Vawter, G.A.; Willison, C.G.; Bridges, M.M.; Lee, J.W.; Pearton, S.J.; Abernathy, C.R.

    1997-12-01

    FABRICATION OF GROUP III NITRIDE DEVICES RELIES ON THE ABILITY TO PATTERN FEATURES TO DEPTHS RANGING FROM 1000 A TO {gt} 5 MICRONS WITH ANISOTROPIC PROFILES, SMOOTH MORPHOLOGIES, SELECTIVE ETCHING OF ONE MATERIAL OVER ANOTHER, AND A LOW DEGREE OF PLASMA INDUCED DAMAGE. IN THIS STUDY, GAN ETCH RATES AND ETCH PROFILES ARE COMPARED USING REACTIVE ION ETCH (RIE), REACTIVE ION BEAM ETCHING (RIBE), ELECTRON CYCLOTRON RESONANCE (ECR), AND INDUCTIVELY COUPLED PLASMA (ICP) ETCH SYSTEMS. RIE YIELDED THE SLOWEST ETCH RATES AND SLOPED ETCH PROFILES DESPITE DC-BIASES {gt} -900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AlN etch characteristics are also compared using ICP and RIBE.

  17. Fabrication, characterization, and biological assessment of multilayer DNA coatings on sandblasted-dual acid etched titanium surface.

    PubMed

    Liu, Li; Song, Li-Na; Yang, Guo-Li; Zhao, Shi-Fang; He, Fu-Ming

    2011-06-01

    As local gene therapy has received attention, immobilizing functional gene onto irregular oral implant surface has become an advanced challenge. Electrostatic layer-by-layer (LBL) assembly technique could achieve this goal and allow local and efficient administration of genes to the target cells. In this study, multilayers of cationic lipid/plasmid DNA (pEGFP-C1) complex (LDc) and anionic hyaluronic acid were assembled onto sandblasted-dual acid etched titanium disks by the LBL technique. Surface characteristics of the coatings were performed by x-ray photospectroscopy (XPS), contact angle measurements, and scanning electron microscopy (SEM). The cell biological characteristics of the coatings were evaluated by in vitro experiments. SEM results demonstrated that the porous titanium surface was gradually flattened with the increase of the multilayer. The XPS survey indicated that the N element was found from the coating. The coating degradation and pEGFP-C1 releasing kinetics showed that the more assembled layer numbers were, the larger the amount of DNA released in the first 30 h. MC3T3-E1 cells were cultured directly on the DNA-loaded surface. Higher enhanced green fluorescent protein (EGFP) expression efficiency was achieved by increasing the number of layers when cells were cultured after 24 or 72 h. The MC3T3-E1 cell viability on the surface of multilayer DNA coatings was significantly higher than that on control porous titanium surface. It was concluded that the approach established by the LBL technique had great potential in immobilizing gene coatings onto the porous titanium surface and subsequently influenced the function of the cultured cell. PMID:21448994

  18. Fourier transform infrared photoacoustic spectroscopy study of physicochemical interaction between human dentin and etch-&-rinse adhesives in a simulated moist bond technique.

    PubMed

    Ubaldini, Adriana L M; Baesso, Mauro L; Sehn, Elizandra; Sato, Francielle; Benetti, Ana R; Pascotto, Renata C

    2012-06-01

    The purpose of this study was to provide the physicochemical interactions at the interfaces between two commercial etch-&-rinse adhesives and human dentin in a simulated moist bond technique. Six dentin specimens were divided into two groups (n=3) according to the use of two different adhesive systems: (a) 2-hydroxyethylmethacrylate (HEMA) and 4-methacryloxyethyl trimellitate anhydrate (4-META), and (b) HEMA. The Fourier transform infrared photoacoustic spectroscopy was performed before and after dentin treatment with 37% phosphoric acid, with adhesive systems and also for the adhesive systems alone. Acid-conditioning resulted in a decalcification pattern. Adhesive treated spectra subtraction suggested the occurrence of chemical bonding to dentin expressed through modifications of the OH stretching peak (3340 cm(-1)) and symmetric CH stretching (2900 cm(-1)) for both adhesives spectra; a decrease of orthophosphate absorption band (1040 to 970 cm(-1)) for adhesive A and a better resolved complex band formation (1270 to 970 cm(-1)) for adhesive B were observed. These results suggested the occurrence of chemical bonding between sound human dentin and etch-&-rinse adhesives through a clinical typical condition.

  19. Inactivation of Matrix-bound MMPs by Cross-linking Agents in Acid Etched Dentin

    PubMed Central

    Scheffel, Débora Lopes Salles; Hebling, Josimeri; Scheffel, Régis Henke; Agee, Kelly A.; Turco, Gianluca; de Souza Costa, Carlos Alberto; Pashley, David H.

    2014-01-01

    Objectives Published TEM analysis of in vivo resin-dentin bonds shows that in 44 months almost 70% of collagen fibrils from the hybrid layer disappear. Matrix metalloproteinases (MMPs) play an important role in that process and are thought to be the main factor responsible for the solubitization of dentin collagen. Therefore, this study aimed to evaluate the inactivation of matrix-bound MMPs by carbodiimide (EDC) or proanthocyanidin (PA) both cross-linking agents, or the MMP-inhibitor, chlorhexidine (CHX), on acid-etched dentin using a simplified MMP assay method. Methods Dentin beams (1×1×6mm) were obtained from mid-coronal dentin of sound third molars and randomly divided into 6 groups (G) according to the dentin treatment: G1: Deionized water (control), G2: 0.1M EDC, G3: 0.5M EDC, G4: 0.5M EDC+35% HEMA, G5: 5% Proanthocyanidin (PA) and G6: 2% CHX. The beams were etched for 15s with 37% phosphoric acid, rinsed and then immersed for 60s in one of the treatment solutions. The total MMP activity of dentin was analyzed for 1 h by colorimetric assay (Sensolyte). Data were submitted to Wilcoxon non-parametric test and Mann-Whitney tests (p>0.05). Results All experimental cross-linking solutions significantly reduced MMP activity compared to control, except 0.1M EDC (53.6% ±16.1). No difference was observed between cross-linking agents and 2% CHX 0.5M EDC + 35% HEMA (92.3% ±8.0) was similar to 0.5M EDC (89.1% ±6.4), 5% PA (100.8% ±10.9) and 2% CHX (83.4% ±10.9). Conclusion Dentin treatment with cross-linking agents is effective to significantly reduce MMP activity. Mixing 0.5M EDC and 35% HEMA did not influence EDC inhibitor potential. PMID:23786610

  20. Effect of the application time of phosphoric acid and self-etch adhesive systems to sclerotic dentin

    PubMed Central

    MENA-SERRANO, Alexandra Patricia; GARCIA, Eugenio Jose; PEREZ, Miguel Muñoz; MARTINS, Gislaine Cristine; GRANDE, Rosa Helena Miranda; LOGUERCIO, Alessandro Dourado; REIS, Alessandra

    2013-01-01

    Objectives: To evaluate the effect of application time on the resin-dentin bond strength (µTBS) and etching pattern of adhesive systems applied on sclerotic dentine. Material and Methods: A total of forty-two bovine incisors had their roots removed. The 1-step self-etch GO (SDI), the 2-step self-etch Adper SE Bond (3MESPE) and the 35% phosphoric acid (3MESPE) from the 2-step etch-and-rinse Adper Single Bond 2 (3MESPE) were applied on the bovine incisal surfaces according to the manufacturer's instructions or duplicating the recommended conditioning time. After adhesive application, thirty teeth were restored with composite resin, stored for 24 h in distilled water at 37º C, and sectioned into resin-dentin bonded sticks (0.8 mm2) and tested according to the µTBS at 0.5 mm/min. The etching pattern of the remaining twelve teeth (n=4 for each material) was examined under scanning electron microscopy. Each tooth was divided into a buccal-to-lingual direction into three thirds, and each third randomly assigned to the groups: control (no treatment), according to the manufacturers' instructions and duplicating the recommended application time. The µTBS and the relative percentage of the tubule area opening were evaluated by two-way repeated measures ANOVA and Tukey's tests (α=0.05). Results: The duplication of the conditioning time favored only the GO adhesive (p<0.05). Both application methods significantly increased the tubule area opening (p<0.05) compared to the controls. Conclusions: The efficacy of duplicating the conditioning time was only effective for the 1-step self-etch adhesive system tested. PMID:23739856

  1. Characterization and adsorption properties of diatomaceous earth modified by hydrofluoric acid etching.

    PubMed

    Tsai, Wen-Tien; Lai, Chi-Wei; Hsien, Kuo-Jong

    2006-05-15

    This work was a study of the chemical modification of diatomaceous earth (DE) using hydrofluoric acid (HF) solution. Under the experimental conditions investigated, it was found that HF under controlled conditions significantly etched inward into the interior of the existing pore structure in the clay mineral due to its high content of silica, leaving a framework possessing a larger BET surface area (ca. 10 m2 g(-1)) in comparison with that (ca. 4 m2 g(-1)) of its precursor (i.e., DE). Further, the results indicated that the HF concentration is a more determining factor in creating more open pores than other process parameters (temperature, holding time, and solid/liquid ratio). This observation was also in close agreement with the examinations by the silicon analysis, scanning electron microscopy, X-ray diffraction, and Fourier transform infrared spectroscopy. The adsorption kinetics and the adsorption isotherm of methylene blue onto the resulting clay adsorbent can be well described by a pseudo-second-order reaction model and the Freundlich model, respectively.

  2. An improved technique for dental alloy etching with a potentiostatic device.

    PubMed

    Hong, C Y

    1989-10-01

    Since a good retention of direct bonded retainers onto abutment teeth is the primary requirement for the fabrication of etched fixed partial dentures, successful formation of a micromechanical retentive architecture on the bonding surface is one of the most important procedures. For creating such a retentive dendritic pattern on nonprecious metal, a 2-electrode electrolytic method has been used. This equipment consists of a low-voltage DC power supply and two electrodes, namely, a working and a counter one. However, the current and voltage should be monitored during the entire processing time and the etching area must be pre-estimated. A potentiostat has been used to automatically stabilize the voltage across the working electrode and reference electrode by adjusting the current, as commonly employed in electro-chemical technology. A 3-electrode corrosion device originally developed for laboratory research was adapted for dental retainer etching in this study. The results revealed that the etching of dental nonprecious metal (Ni-Cr-Be alloy) could successfully be performed by using the system with a potentiostat. Moreover, the working potential was found to be approximately 1.3 volts by taking the midpoint between the breakdown and the critical potentials for passivation on the potentiostatic anode polarization curves. The optimal exposure time has been found to be in a range of 3 to 5 minutes and 4 minutes to be ideal as determined by SEM microphotographic observation which showed a uniform dendritic pattern with regular lattice form of alternating ridges and valleys.(ABSTRACT TRUNCATED AT 250 WORDS)

  3. Facet dependent binding and etching: ultra-sensitive colorimetric visualization of blood uric acid by unmodified silver nanoprisms.

    PubMed

    Tan, Kanghui; Yang, Guang; Chen, Huide; Shen, Pengfei; Huang, Yucheng; Xia, Yunsheng

    2014-09-15

    By combination of experiments and density functional theory calculations, we present a simple but effective "facet dependent binding and etching" strategy for non-enzymatic and non-aggregated colorimetric sensing of blood uric acid (UA), using unmodified Ag nanoprisms as the signal readout. In the absence of UA, the triangular Ag nanoprisms are etched alongside (110) facets by H2O2 and form round nanodiscs, and a more than 160 nm surface plasmon resonance (SPR) blue shift is observed. Because of special affinity between UA and side facets of the Ag nanoprisms, pre-added UA can well protect the Ag nanoprisms from etching. Such protection effect can be used for well quantifying UA in the range of 10-3000 nM, based on the inverse proportion of the SPR blue shift with the added analyte. Due to very thin plate morphology (5 nm) and facet dependent binding/etching effects of the Ag nanoprisms, the sensing system has ultrahigh sensitivity. The detection limit is only 10nM, which is about 2 to 4 orders of magnitude lower than that of previous colorimetric sensing systems. In addition to accurate quantitation, the proposed strategy can conveniently discriminate the patient of hyperuricemia from normal person by naked eyes. So, the present simple, low-cost and visualized UA chemosensor has great potential in the applications for point-of-care diagnostics.

  4. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    SciTech Connect

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa; Hinata, Toru; Washio, Masakazu; Oshima, Akihiro; Tagawa, Seiichi

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  5. Effect of Fluoride on the Morphology of Calcium Phosphate Crystals Grown on Acid-Etched Human Enamel

    PubMed Central

    Fan, Y.; Sun, Z.; Moradian-Oldak, J.

    2009-01-01

    The aim of this study was to examine the effect of fluoride ion concentration on the morphology of calcium phosphate crystals grown on acid-etched enamel as a model for tooth enamel erosion. Samples were immersed in calcification solution for 16 h and changes in crystal morphology were monitored by field emission scanning electron microscopy. Without fluoride, plate-like octacalcium phosphate crystals (20 nm thick, 2–10 μm wide) were formed. With 1–10 mg/l fluoride, arrays of denser needle-like nanocrystals (20–30 nm wide, >500 nm in length) were formed. We conclude that there is a minimal fluoride concentration (1 mg/l) that dramatically affects the morphology of calcium phosphate crystals grown on etched enamel in vitro. PMID:19321991

  6. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    PubMed

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s. PMID:27315775

  7. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    PubMed

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s.

  8. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    PubMed

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P < 0.05); no difference was observed between the composites (P > 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength. PMID:22414522

  9. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    PubMed

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P < 0.05); no difference was observed between the composites (P > 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength.

  10. Early endosseous integration enhanced by dual acid etching of titanium: a torque removal study in the rabbit.

    PubMed

    Klokkevold, P R; Johnson, P; Dadgostari, S; Caputo, A; Davies, J E; Nishimura, R D

    2001-08-01

    Textured implant surfaces are thought to enhance endosseous integration. Torque removal forces have been used as a biomechanical measure of anchorage, or endosseous integration, in which the greater forces required to remove implants may be interpreted as an increase in the strength of bony integration. The purpose of this study was to compare the torque resistance to removal of screw-shaped titanium implants having a dual acid-etched surface (Osseotite) with implants having either a machined surface, or a titanium plasma spray surface that exhibited a significantly more complex surface topography. Three custom screw-shaped implant types - machined, dual acid-etched (DAE), and titanium plasma sprayed (TPS) - were used in this study. Each implant surface was characterized by scanning electron microscopy and optical profilometry. One DAE implant was placed into each distal femur of eighteen adult New Zealand White rabbits along with one of the other implant types. Thus, each rabbit received two DAE implants and one each of the machined, or TPS, implants. All implants measured 3.25 mm in diameter x 4.00 mm in length without holes, grooves or slots to resist rotation. Eighteen rabbits were used for reverse torque measurements. Groups of six rabbits were sacrificed following one, two and three month healing periods. Implants were removed by reverse torque rotation with a digital torque-measuring device. Three implants with the machined surface preparation failed to achieve endosseous integration. All other implants were anchored by bone. Mean torque values for machined, DAE and TPS implants at one, two and three months were 6.00+/-0.64 N-cm, 9.07+/-0.67 N-cm and 6.73+/-0.95 N-cm; 21.86+/-1.37 N-cm, 27.63+/-3.41 N-cm and 27.40+/-3.89 N-cm; and 27.48+/-1.61 N-cm, 44.28+/-4.53 N-cm and 59.23+/-3.88 N-cm, respectively. Clearly, at the earliest time point the stability of DAE implants was comparable to that of TPS implants, while that of the machined implants was an order of

  11. Multiple-mask chemical etching

    NASA Technical Reports Server (NTRS)

    Cannon, D. L.

    1969-01-01

    Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

  12. Etching fission tracks in zircons

    USGS Publications Warehouse

    Naeser, C.W.

    1969-01-01

    A new technique has been developed whereby fission tracks can be etched in zircon with a solution of sodium hydroxide at 220??C. Etching time varied between 15 minutes and 5 hours. Colored zircon required less etching time than the colorless varieties.

  13. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    NASA Astrophysics Data System (ADS)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  14. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    PubMed

    Monje, Alberto; González-García, Raúl; Fernández-Calderón, María Coronada; Hierro-Oliva, Margarita; González-Martín, María Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 × 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ≥×500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to ×2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined. PMID:25642739

  15. Characterization and biocompatibility of a titanium dental implant with a laser irradiated and dual-acid etched surface.

    PubMed

    Hsu, Shan-Hui; Liu, Bai-Shuan; Lin, Wen-Hung; Chiang, Heng-Chieh; Huang, Shih-Ching; Cheng, Shih-Shyong

    2007-01-01

    The biological properties of commercial pure titanium (cp-Ti) dental implants can be improved by surface treatment. In this study, the cp-Ti surfaces were prepared to enable machined surfaces (TM) to be compared to the machined, sandblasted, laser irradiated and dual-acid etched surfaces (TA). The surface elements and roughness were characterized. The biocompatibility was evaluated by cell and organ culture in vitro. The removal torque was measured in rabbit implantation. Surface characterization revealed that TA surface was more oxidized than TM surface. The TA surface had micrometric, beehive-like coarse concaves. The average roughness (2.28 mum) was larger than that typical of acid-etched surfaces. Extracts of both materials were not cytotoxic to bone cells. The morphology of cells attached on the TA surface was superior to that on the TM surface. TA promoted cell migration and repaired damaged bones more effectively in organ culture. The formation of bone-like nodules on TA disk exceeded that on TM disk. Rabbit tibia implantation also proved that TA implant had greater removal torque value. These results suggested that TA had good osteoconductivity and was a potential material for dental implantation. PMID:17264387

  16. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    PubMed

    Monje, Alberto; González-García, Raúl; Fernández-Calderón, María Coronada; Hierro-Oliva, Margarita; González-Martín, María Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 × 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ≥×500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to ×2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined.

  17. Etching of enamel for direct bonding with a thulium fiber laser

    NASA Astrophysics Data System (ADS)

    Kabaş Sarp, Ayşe S.; Gülsoy, Murat

    2011-03-01

    Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

  18. Microtensile bond strength of a resin-based fissure sealant to Er,Cr:YSGG laser-etched primary enamel.

    PubMed

    Sungurtekin-Ekci, Elif; Oztas, Nurhan

    2016-05-01

    The aim of this study was to evaluate the effect of Er,Cr:YSGG laser pre-treatment alone, or associated with acid-etching, on the microtensile bond strength of a resin-based fissure sealant to primary enamel. Twenty-five human primary molars were randomly divided into five groups including (1) 35 % acid etching, (2) 2.5-W laser etching, (3) 3.5-W laser etching, (4) 2.5-W laser etching + acid etching, and (5) 3.5-W laser etching + acid etching. Er,Cr:YSGG laser was used at a wavelength of 2.780 nm and pulse duration of 140-200 μs with a repetition rate of 20 Hz. Following surface pre-treatment, the fissure sealant (ClinPro™, 3M Dental Products) was applied. Each tooth was sectioned and subjected to microtensile testing. Kruskal-Wallis test was used for statistical analysis. The level of significance was set at p < 0.05. The microtensile bond strength values of group 1 were significantly higher than those of group 2, while no statistically significant difference was detected between groups 1, 3, 4, and 5. It was concluded that 3.5-W laser etching produced results comparable to conventional acid etching technique, whereas 2.5-W laser etching was not able to yield adequate bonding performance.

  19. Effect of hydrofluoric acid etching on shear bond strength of an indirect resin composite to an adhesive cement.

    PubMed

    Hori, Sayaka; Minami, Hiroyuki; Minesaki, Yoshito; Matsumura, Hideo; Tanaka, Takuo

    2008-07-01

    This study evaluated the effect of 1% hydrofluoric acid (HF) treatment on the bonding of an adhesive cement (Panavia F 2.0) to an indirect resin composite (Estenia C&B). Pairs of composite disks (10 and 8 mm in diameter by 3 mm thickness) were prepared. Adhesive surfaces were pretreated with either airborne particle abrasion or HF etching before being soaked for 30 seconds, five minutes or 10 minutes, with or without application of silane coupling agent. Adhesive specimens were fabricated by cementing a pair of treated disks. Shear bond strength was determined before and after 50,000 times of thermocycling (4 and 60 degrees C). All data were statistically analyzed using two-way ANOVA and Bonferroni's test (a=0.05). Bond strength achieved with five minutes of HF etching (18.3+/-1.1 MPa) was significantly higher (P=0.0025) than that obtained with airborne particle abrasion followed by application of silane coupling agent (14.3+/-1.8 MPa) after thermocycling.

  20. Controlled in situ etch-back

    NASA Technical Reports Server (NTRS)

    Mattauch, R. J.; Seabaugh, A. C. (Inventor)

    1981-01-01

    A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

  1. Effect of cavity preparation method on microtensile bond strength of a self-etching primer vs phosphoric acid etchant to enamel.

    PubMed

    de Souza-Zaroni, Wanessa Christine; Delfino, Carina Sinclér; Ciccone-Nogueira, Juliane Cristina; Palma-Dibb, Regina Guenka; Corona, Silmara Aparecida Milori

    2007-10-01

    This study evaluated the effect of cavity preparation using air abrasion or carbide bur on bond strength to enamel treated with a self-etching primer (Tyrian SPE) or a phosphoric acid etchant. Twenty-four molars were divided into three groups: high-speed; standard handpiece (ST air abrasion) or supersonic handpiece (SP air abrasion) of the same air-abrasive system. The enamel surfaces were treated with one of the two etchants and the same adhesive agent One Step Plus, and then composite buildups were done with Filtek Z250. After 24 h at 37 degrees C, beams (0.8 mm2) were obtained and subjected to tensile stress in a universal testing machine (0.5 mm/min). The data were submitted to analysis of variance and Tukey's test (P < 0.05). For the conditioning agents, it was observed that the specimens conditioned with phosphoric acid presented superior results than the specimens that used Tyrian SPE. For the preparation techniques, it was verified that the SP air abrasion groups showed the highest bond strengths and carbide-bur groups presented the lowest bond strengths when the specimens were conditioned with Tyrian SPE. It can be concluded that the influence of the cavity preparation method was dependent on the conditioning system used, only when using carbide-bur preparation technique.

  2. Evaluation of Bone Healing on Sandblasted and Acid Etched Implants Coated with Nanocrystalline Hydroxyapatite: An In Vivo Study in Rabbit Femur

    PubMed Central

    Melin Svanborg, Lory; Meirelles, Luiz; Franke Stenport, Victoria; Currie, Fredrik; Andersson, Martin

    2014-01-01

    This study aimed at investigating if a coating of hydroxyapatite nanocrystals would enhance bone healing over time in trabecular bone. Sandblasted and acid etched titanium implants with and without a submicron thick coat of hydroxyapatite nanocrystals (nano-HA) were implanted in rabbit femur with healing times of 2, 4, and 9 weeks. Removal torque analyses and histological evaluations were performed. The torque analysis did not show any significant differences between the implants at any healing time. The control implant showed a tendency of more newly formed bone after 4 weeks of healing and significantly higher bone area values after 9 weeks of healing. According to the results from this present study, both control and nano-HA surfaces were biocompatible and osteoconductive. A submicron thick coating of hydroxyapatite nanocrystals deposited onto blasted and acid etched screw shaped titanium implants did not enhance bone healing, as compared to blasted and etched control implants when placed in trabecular bone. PMID:24723952

  3. Bone contact around osseointegrated implants: histologic analysis of a dual-acid-etched surface implant in a diabetic patient.

    PubMed

    Bugea, Calogero; Luongo, Roberto; Di Iorio, Donato; Cocchetto, Roberto; Celletti, Renato

    2008-04-01

    The clinical applicability and predictability of osseointegrated implants in healthy patients have been studied extensively. Although successful treatment of patients with medical conditions including diabetes, arthritis, and cardiovascular disease has been described, insufficient information is available to determine the effects of diabetes on the process of osseointegration. An implant placed and intended to support an overdenture in a 65-year-old diabetic woman was prosthetically unfavorable and was retrieved after 2 months. It was then analyzed histologically. No symptoms of implant failure were detected, and histomorphometric evaluation showed the bone-to-implant contact percentage to be 80%. Osseointegration can be obtained when implants with a dual-acid-etched surface are placed in properly selected diabetic patients. PMID:18546810

  4. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    PubMed Central

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  5. Cytoskeletal reorganization of human platelets after stimulation revealed by the quick-freeze deep-etch technique

    PubMed Central

    1987-01-01

    We studied the cytoskeletal reorganization of saponized human platelets after stimulation by using the quick-freeze deep-etch technique, and examined the localization of myosin in thrombin-treated platelets by immunocytochemistry at the electron microscopic level. In unstimulated saponized platelets we observed cross-bridges between: adjoining microtubules, adjoining actin filaments, microtubules and actin filaments, and actin filaments and plasma membranes. After activation with 1 U/ml thrombin for 3 min, massive arrays of actin filaments with mixed polarity were found in the cytoplasm. Two types of cross-bridges between actin filaments were observed: short cross-bridges (11 +/- 2 nm), just like those observed in the resting platelets, and longer ones (22 +/- 3 nm). Actin filaments were linked with the plasma membrane via fine short filaments and sometimes ended on the membrane. Actin filaments and microtubules frequently ran close to the membrane organelles. We also found that actin filaments were associated by end- on attachments with some organelles. Decoration with subfragment 1 of myosin revealed that all the actin filaments associated end-on with the membrane pointed away in their polarity. Immunocytochemical study revealed that myosin was present in the saponin-extracted cytoskeleton after activation and that myosin was localized on the filamentous network. The results suggest that myosin forms a gel with actin filaments in activated platelets. Close associations between actin filaments and organelles in activated platelets suggests that contraction of this actomyosin gel could bring about the observed centralization of organelles. PMID:3667697

  6. Effects of solvent volatilization time on the bond strength of etch-and-rinse adhesive to dentin using conventional or deproteinization bonding techniques

    PubMed Central

    de Sousa Júnior, José Aginaldo; Carregosa Santana, Márcia Luciana; de Figueiredo, Fabricio Eneas Diniz

    2015-01-01

    Objectives This study determined the effect of the air-stream application time and the bonding technique on the dentin bond strength of adhesives with different solvents. Furthermore, the content and volatilization rate of the solvents contained in the adhesives were also evaluated. Materials and Methods Three adhesive systems with different solvents (Stae, SDI, acetone; XP Bond, Dentsply De Trey, butanol; Ambar, FGM, ethanol) were evaluated. The concentrations and evaporation rates of each adhesive were measured using an analytical balance. After acid-etching and rinsing, medium occlusal dentin surfaces of human molars were kept moist (conventional) or were treated with 10% sodium hypochlorite for deproteinization. After applying adhesives over the dentin, slight air-stream was applied for 10, 30 or 60 sec. Composite cylinders were built up and submitted to shear testing. The data were submitted to ANOVA and Tukey's test (α = 0.05). Results Stae showed the highest solvent content and Ambar the lowest. Acetone presented the highest evaporation rate, followed by butanol. Shear bond strengths were significantly affected only by the factors of 'adhesive' and 'bonding technique' (p < 0.05), while the factor 'duration of air-stream' was not significant. Deproteinization of dentin increased the bond strength (p < 0.05). Stae showed the lowest bond strength values (p < 0.05), while no significant difference was observed between XP Bond and Ambar. Conclusions Despite the differences in content and evaporation rate of the solvents, the duration of air-stream application did not affect the bond strength to dentin irrespective of the bonding technique. PMID:26295023

  7. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

    PubMed

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C-N

    2013-05-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm(2)) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching.

  8. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

    PubMed

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C-N

    2013-05-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm(2)) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  9. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique

    PubMed Central

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C.-N.

    2013-01-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120–130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6–10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  10. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    DOEpatents

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  11. Optimization of silver-assisted nano-pillar etching process in silicon

    NASA Astrophysics Data System (ADS)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  12. Influence of preliminary etching on the stability of bonds created by one-step self-etch bonding systems.

    PubMed

    Taschner, Michael; Nato, Fernando; Mazzoni, Annalisa; Frankenberger, Roland; Falconi, Mirella; Petschelt, Anselm; Breschi, Lorenzo

    2012-06-01

    We evaluated the effects of preliminary etching of dentine on the stability of the bond created by one-step self-etch adhesives under different storage conditions. Adper Easy Bond (3M ESPE) and iBond Self-Etch (iBond SE; Heraeus Kulzer) were applied with an etch-and-rinse (i.e. after preliminary phosphoric acid etching for 15 s) or a self-etch approach. Resin-dentine bonded specimens were sectioned perpendicularly to the adhesive interface according to the 'non-trimming technique'. Beams were stored in artificial saliva for 24 h, 6 months, or 1 yr at 37°C, or in 10% NaOCl for 5 h at room temperature, and then stressed until failure; the microtensile bond strengths were calculated. Interfacial nanoleakage of additional teeth was evaluated using light microscopy or transmission electron microscopy. Adper Easy Bond showed higher bond strength than iBond SE, regardless of the dentine treatment. Similar microtensile bond strength results were obtained for teeth subjected to artificial ageing in 10% NaOCl for 5 h at room temperature and for teeth stored in artificial saliva for 6 months at 37°C. The additional etching step increased the microtensile bond strength for Adper Easy Bond and iBond SE. This study supports the use of one-step adhesives on etched dentine because of the increased bond strength compared with their application onto smear-layer-covered dentine, regardless of storage conditions. PMID:22607341

  13. In vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste.

    PubMed

    Praxedes-Neto, Otávio José; Borges, Boniek Castillo Dutra; Florêncio-Filho, Cícero; Farias, Arthur Costa Rodrigues; Drennan, John; De Lima, Kenio Costa

    2012-07-01

    This study aimed to evaluate the in vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste. One hundred and twenty teeth from 30 volunteers were selected. The teeth were assigned to four treatments: no treatment (negative control); 37% phosphoric acid-etching (PAE) (positive control); PAE + resin-modified glass ionomer cement (RMGIC); and, PAE + composite resin. Patients brushed teeth with fluoridated (n = 15) or non-fluoridated (n = 15) toothpastes, so that etched enamel was protected with screens and it was not in contact with the brush bristles. Remineralization was evaluated by means of laser fluorescence (LF), environmental scanning electronic microscopy, and energy dispersive spectrometry after extraction. The LF means were compared by means of Wilcoxon and Mann Whitney tests. Environmental scanning electron microscopy scores were compared among the groups using a Kruskal Wallis test, whereas the Ca/P ratio was evaluated by means of an Analysis of Variance with subparcels (treatments) and Tukey's post-hoc test. There were no statistically significant differences between the tooth pastes and between the orthodontic adhesives evaluated. Most teeth presented only partial enamel remineralization. Therefore, the fluoride released by the RMGIC was not enough to cause increased crystal regrowth in the acid-etched enamel. The use of fluoridated toothpaste did not provide positive additional effect.

  14. Selective Etching of Semiconductor Glassivation

    NASA Technical Reports Server (NTRS)

    Casper, N.

    1982-01-01

    Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

  15. Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conventional Acid-Etching

    PubMed Central

    Hosseini, M.H.; Namvar, F.; Chalipa, J.; Saber, K.; Chiniforush, N.; Sarmadi, S.; Mirhashemi, A.H.

    2012-01-01

    Introduction: The purpose of this study was to compare shear bond strength (SBS) of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching. Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI) scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types. Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively. Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning. PMID:22924098

  16. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  17. Effect of sodium sulfite, carboxylic monomer, and phosphoric acid etching on bonding of tri-n-butylborane initiated resin to human enamel.

    PubMed

    Nogawa, Hiroshi; Koizumi, Hiroyasu; Akazawa, Nobutaka; Hiraba, Haruto; Nakamura, Mitsuo; Matsumura, Hideo

    2015-03-01

    The purpose of the present study is evaluation of bonding durability of tri-n-butylborane (TBB) initiated resin without 4-methacryloyloxyethyl trimellitate anhydride (4-META) joined to human enamel. Ground human enamel was bonded with TBB resin under six surface conditions: 1) as ground, 2) primed with Teeth Primer, 3) sodium sulfite solution, 4) 4-META solution, 5) acetone-water, and 6) phosphoric acid etching. Pre- and post-thermocycling bond strengths and change in strength after thermocycling were compared. Etching enamel with 35-45% phosphoric acid enhanced bonding durability between enamel and TBB-initiated resin. Priming with Teeth Primer or 4-META solution improved bond strength between enamel and TBB-initiated resin. Sodium sulfite had little effect on enamel bonding in the present bonding systems. PMID:25807904

  18. Petrologic and experimental evidence for the etching of garnets by organic acids in the upper Jurassic Morrision Formation, northwestern New Mexico.

    USGS Publications Warehouse

    Hansley, P.L.

    1987-01-01

    Etching of garnets and partial to complete dissolution of other aluminosilicate minerals were caused by high concentrations of organic acids generated during the maturation of epigenetic organic matter (predominantly type-III kerogen) in the Morrison Formation. The presence of authigenic phases that form near 100oC indicates that temperatures were high enough during diagenesis to cause the thermal degradation of kerogen.-from Author

  19. Femtosecond laser etching of dental enamel for bracket bonding.

    PubMed

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  20. No Positive Effect of Acid Etching or Plasma Cleaning on Osseointegration of Titanium Implants in a Canine Femoral Condyle Press-Fit Model

    PubMed Central

    Saksø, H; Jakobsen, T; Saksø, M; Baas, J; Jakobsen, SS; Soballe, K

    2013-01-01

    Purpose: Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. Methods: In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. Results: The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (p<0.05) while there was no statistical difference in deep surface implant porosity when compared with nontreated implant. Within the deep surface implant porosity, there was more newly formed bone in the control group compared to the ET and ET+PCLN groups (p<0.05). In all compared groups, there was no statistical difference in any biomechanical parameter. Conclusions: In terms of osseointegration on outer surface implant porosity PC+PSHA was superior to the other three groups. Neither the acid etching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time. PMID:23341850

  1. Modulated regeneration of acid-etched human tooth enamel by a functionalized dendrimer that is an analog of amelogenin.

    PubMed

    Chen, Mei; Yang, Jiaojiao; Li, Jiyao; Liang, Kunneng; He, Libang; Lin, Zaifu; Chen, Xingyu; Ren, Xiaokang; Li, Jianshu

    2014-10-01

    In the bioinspired repair process of tooth enamel, it is important to simultaneously mimic the organic-matrix-induced biomineralization and increase the binding strength at the remineralization interface. In this work, a fourth-generation polyamidoamine dendrimer (PAMAM) is modified by dimethyl phosphate to obtain phosphate-terminated dendrimer (PAMAM-PO3H2) since it has a similar dimensional scale and peripheral functionalities to that of amelogenin, which plays important role in the natural development process of enamel. Its phosphate group has stronger affinity for calcium ion than carboxyl group and can simultaneously provide strong hydroxyapatite (HA)-binding capability. The MTT assay demonstrates the low cytotoxicity of PAMAM-PO3H2. Adsorption tests indicate that PAMAM-PO3H2 can be tightly adsorbed on the human tooth enamel. Scanning electron microscopy and X-ray diffraction are used to analyze the remineralization process. After being incubated in artificial saliva for 3weeks, there is a newly generated HA layer of 11.23μm thickness on the acid-etched tooth enamel treated by PAMAM-PO3H2, while the thickness for the carboxyl-terminated one (PAMAM-COOH) is only 6.02μm. PAMAM-PO3H2 can regulate the remineralization process to form ordered new crystals oriented along the Z-axis and produce an enamel prism-like structure that is similar to that of natural tooth enamel. The animal experiment also demonstrates that PAMAM-PO3H2 can induce significant HA regeneration in the oral cavity of rats. Thus PAMAM-PO3H2 shows great potential as a biomimetic restorative material for human tooth enamel.

  2. Effect of modifications of dual acid-etched implant surfaces on periimplant bone formation. Part II: calcium phosphate coatings.

    PubMed

    Schliephake, H; Aref, A; Scharnweber, D; Rösler, S; Sewing, A

    2009-01-01

    The aim of the present study was to test the hypothesis that calcium phosphate coatings of dual acid-etched surfaces (DAEs) can improve periimplant bone regeneration. Ten adult female foxhounds received experimental titanium screw implants in the mandible 3 months after removal of all premolar teeth. Five types of surface states were evaluated in each animal: (i) implants with a machined surface (MS) (Control 1); (ii) implants with a DAE (Control 2); (iii) implants with a DAE coated with collagen I (Control 3); (iv) implants with a DAE with mineralized collagen I; and (v) implants with a DAE with a hydroxylapatite (HA) coating. Periimplant bone regeneration was assessed by histomorphometry after 1 and 3 months in five dogs each by measuring bone implant contact (BIC) and the volume density of the newly formed periimplant bone (BVD). After 1 month, mean BIC of experimental implants did not differ significantly from implants with DAE and collagen-coated surfaces, but was significantly higher than the MS implants. BVD was enhanced significantly only in implants with mineralized collagen coating compared with DAE and collagen-coated controls. After 3 months, the mean values of BIC had increased significantly in the group of implants with HA and mineralized collagen coating but were not significantly different from implants with DAE and collagen-coated surfaces. The same held true for the mean BVD values. In conclusion, the present study could not verify the hypothesis that calcium phosphate coatings of DAEs in the present form enhanced periimplant bone formation compared with the DAE surface alone. PMID:19126106

  3. Surface Properties and Osteoblastic Cytocompatibility of Two Blasted and Acid-Etched Titanium Implant Systems with Distinct Microtopography

    PubMed Central

    Mesquita, Pedro; Gomes, Pedro de Sousa; Sampaio, Paula; Juodzbalys, Gintaras; Afonso, Américo

    2012-01-01

    ABSTRACT Objectives The aim of this study is to compare two commercially available screw-type sandblasted and acid-etched (SLA) Ti implant systems from Eckermann Laboratorium S.L., with similar geometry and distinct microtopography, regarding surface properties and osteoblastic cytocompatibility. Material and Methods Implant I (referred as a conventional SLA system) and Implant II (a system patented as Eckcyte®) were characterized for macro and microtopograpphy, surface roughness and chemical composition. For the cytocompatibility studies, human bone marrow osteoblastic cells were seeded over the implants' surface, and the cell response was assessed for cell adhesion and proliferation, alkaline phosphatase (ALP) activity and matrix mineralization. Results Implant I presented a rough surface with irregularly shaped and sized cavities among flatter-appearing areas, whereas Implant II exhibited a homogeneous rough microporous surface. Compared to Implant I, Implant II presented higher Ra values (0.8 [SD 0.008] μm and 1.21 [SD 0.15] μm, respectively, P < 0.05) and also increased values of Rz, Rt and Rsm, a more negative value of Rsk, and similar RKu values. XPS showed the expected presence of Ti, O, C and N; Al, Si, F, P and Ca were detected in low concentrations. Implant II exhibited significantly lower Al levels. Both implants supported the adhesion, proliferation and differentiation of osteoblastic cells. Implant II showed a thicker fibrilar cell layer and an earlier onset and more abundant matrix mineralization. Conclusions The homogeneous rough and microporous surface of Implant II is most probably a main contributor for its improved cell response. PMID:24422006

  4. Evaluation of an endosseous titanium implant with a sandblasted and acid-etched surface in the canine mandible: radiographic results.

    PubMed

    Cochran, D L; Nummikoski, P V; Higginbottom, F L; Hermann, J S; Makins, S R; Buser, D

    1996-09-01

    Previous studies have demonstrated in short-term experiments that sandblasted and acid-etched (SLA) titanium implant had a greater bone-to-implant contact than a titanium plasma-sprayed (TPS) implant in non-oral bone. In the present study, an SLA implant was compared radiographically to a TPS implant under unloaded and loaded conditions in the canine mandible for up to 15 months. 69 implants were placed in 6 foxhounds. Standardized radiographs were taken at baseline, preload, 3, 6, 9, and 12 months of loading. Loaded implants were restored with gold crowns similar to the natural dentition. Radiographic assessment of the bone response to the implants was carried out by measuring the distance between the implant shoulder and the most coronal bone-to-implant contact (DIB) and by evaluated of bone density changes using computer-assisted densitometric image analysis (CADIA). 5 different areas-of-interest (AOI) were defined coronally and apically along the implant. DIB measurements revealed that SLA implants had significantly less bone height loss (0.52 mm) than TPS implants (0.69 mm) at the preload evaluation (p = 0.0142) as well as at 3 months of loading (0.73 mm/1.06 mm; p = 0.0337). This difference was maintained between the implant types during the 1-year follow-up period. The same trend was also evident for CADIA measurements with SLA implants showing higher crestal bone density values when comparing preload to baseline data (p = 0.0890) and 3 months to baseline data (p = 0.0912). No measurable bone density changes were apparent in the apical areas of either implant. These results suggest that SLA implants are superior to TPS implants as measured radiographically in oral bone under unloaded and loaded conditions.

  5. Damage characterisation of InP after reactive ion etching using the low-frequency noise measurement technique

    NASA Astrophysics Data System (ADS)

    Gottwald, P.; Kräutle, H.; Szentpáli, B.; Kincses, Zs; Hartnagel, H. L.

    1997-04-01

    Reactive ion etching (RIE) is a basic tool in the processing of InP optoelectronic and photonic integrated circuits (OEICs and PICs). However, due to the bombardment of the high energy ions of the plasma, heavy damage of the semiconductor surface occurs. Additionally, when using a CH 4 + Ar + H 2 plasma significant proton implantation also takes place. Investigating n-type InP etched by specific RIE processes, we show, that the low-frequency noise (LFN) generated in an appropriately designed planar resistor pattern is affected in a characteristic manner depending on the process-parameters. Further, a decrease of the pattern resistance and also significant surface leakage currents were observed, due to a strong enhancement of the surface electron concentration. In n-type material the {1}/{f} noise component is enhanced as the damaged portion of the current path increases. Additionally, generation-recombination (g-r) components are also present in the spectrum indicating that specific deep levels appear in the damaged region. Using rapid thermal annealing (RTA) as a post-process step, the {1}/{f} noise component decreases and the sample resistance increases. At the same time the surface leakage currents disappear. These observations are due to the fact, that an out diffusion of the implanted H + takes place and it is likely that process-induced modifications of the surface layer will tend to recover. To avoid proton implantation, etching only by Ar plasma was investigated. Damage and an enhanced surface conduction were observed. Applying a short HF-dip, a slight increase of the g-r noise intensity was detected.

  6. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  7. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  8. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  9. Chemical etching and EDAX analysis of beryllium-free nickel-chromium ceramo-metal alloy.

    PubMed

    Atta, O M; Mosleh, I E; Shehata, M T

    1995-10-01

    A chemical etching technique is described for producing etch patterns in beryllium-free nickel chromium ceramo-metal alloy. Disc-shaped samples were chemically etched, evaluated with SEM and analysed by the EDAX technique. Scanning electron micrographs revealed, profound retentive cavities. The EDAX analysis provided a comprehensive interpretation of the etch mechanism. The obtained results show that the developed chemical etching has the potential to produce a highly retentive etched surface with less problematic and less technique sensitive than electrolytic etching.

  10. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    NASA Astrophysics Data System (ADS)

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  11. Optical investigation of the intergrowth structure and accessibility of Brønsted acid sites in etched SSZ-13 zeolite crystals by confocal fluorescence microscopy.

    PubMed

    Sommer, Linn; Svelle, Stian; Lillerud, Karl Petter; Stöcker, Michael; Weckhuysen, Bert M; Olsbye, Unni

    2010-11-01

    Template decomposition followed by confocal fluorescence microscopy reveals a tetragonal-pyramidal intergrowth of subunits in micrometer-sized nearly cubic SSZ-13 zeolite crystals. In order to accentuate intergrowth boundaries and defect-rich areas within the individual large zeolite crystals, a treatment with an etching NaOH solution is applied. The defective areas are visualized by monitoring the spatial distribution of fluorescent tracer molecules within the individual SSZ-13 crystals by confocal fluorescence microscopy. These fluorescent tracer molecules are formed at the inner and outer crystal surfaces by utilizing the catalytic activity of the zeolite in the oligomerization reaction of styrene derivatives. This approach reveals various types of etching patterns that are an indication for the defectiveness of the studied crystals. We can show that specially one type of crystals, denoted as core-shell type, is highly accessible to the styrene molecules after etching. Despite the large crystal dimensions, the whole core-shell type SSZ-13 crystal is utilized for catalytic reaction. Furthermore, the confocal fluorescence microscopy measurements indicate a nonuniform distribution of the catalytically important Brønsted acid sites underlining the importance of space-resolved measurements. PMID:20496927

  12. Effects of Dextrose and Lipopolysaccharide on the Corrosion Behavior of a Ti-6Al-4V Alloy with a Smooth Surface or Treated with Double-Acid-Etching

    PubMed Central

    Faverani, Leonardo P.; Assunção, Wirley G.; de Carvalho, Paulo Sérgio P.; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T.; Barao, Valentim A.

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (p<0.05) for the Ti-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (p<0.05). The acid-treated groups showed a significant increase in Cdl values and reduced Rp values (p<0.05, t-test). According to the topography, there was an increase in surface roughness (R2 = 0.726, p<0.0001 for the smooth surface; R2 = 0.405, p = 0.036 for the double-acid-etching-treated surface). The microhardness of the smooth Ti-6Al-4V alloy decreased (p<0.05) and that of the treated Ti-6Al-4V alloy increased (p<0.0001). Atomic force microscopy showed changes in the microstructure of the Ti-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no

  13. Effects of dextrose and lipopolysaccharide on the corrosion behavior of a Ti-6Al-4V alloy with a smooth surface or treated with double-acid-etching.

    PubMed

    Faverani, Leonardo P; Assunção, Wirley G; de Carvalho, Paulo Sérgio P; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T; Barao, Valentim A

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (p<0.05) for the Ti-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (p<0.05). The acid-treated groups showed a significant increase in Cdl values and reduced Rp values (p<0.05, t-test). According to the topography, there was an increase in surface roughness (R2 = 0.726, p<0.0001 for the smooth surface; R2 = 0.405, p = 0.036 for the double-acid-etching-treated surface). The microhardness of the smooth Ti-6Al-4V alloy decreased (p<0.05) and that of the treated Ti-6Al-4V alloy increased (p<0.0001). Atomic force microscopy showed changes in the microstructure of the Ti-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no

  14. Effect of acid etching on marginal adaptation of mineral trioxide aggregate to apical dentin: microcomputed tomography and scanning electron microscopy analysis.

    PubMed

    Al-Fouzan, Khalid; Al-Garawi, Ziad; Al-Hezaimi, Khalid; Javed, Fawad; Al-Shalan, Thakib; Rotstein, Ilan

    2012-12-01

    The present investigation assessed the effect of acid etching on marginal adaptation of white- and gray-colored mineral trioxide aggregate (MTA) to apical dentin using microcomputed tomography (micro-CT) and scanning electron microscopy (SEM). Sixty-four extracted single-rooted human maxillary teeth were used. Following root-end resection and apical preparation, the teeth were equally divided into four groups according to the following root end filling materials: (i) white-colored MTA (WMTA), (ii) etched WMTA (EWMTA), (iii) gray-colored MTA (GMTA) and (iv) etched GMTA (EGMTA). After 48 h, the interface between root-end filling materials and the dentinal walls was assessed using micro-CT and SEM. Data were statistically analyzed using the Kruskal-Wallis and Dunn tests. Micro-CT analysis revealed gap volumes between the apical cavity dentin walls and EGMTA, GMTA, EWMTA and WMTA of (0.007 1±0.004) mm(3), (0.053±0.002) mm(3), (0.003 6±0.001) mm(3) and (0.005 9±0.002) mm(3) respectively. SEM analysis revealed gap sizes for EGMTA, WMTA, EWMTA and GMTA to be (492.3±13.8) µm, (594.5±17.12) µm, (543.1±15.33) µm and (910.7±26.2) µm respectively. A significant difference in gap size between root end preparations filled with GMTA and EGMTA was found (P<0.05). No significance difference in gap size between WMTA and EWMTA were found in either SEM or micro-CT analysis. In conclusion, pre-etching of apical dentin can provide a better seal for GMTA but not for WMTA. PMID:23306857

  15. 24% Indigenously Prepared Ethylene Diamine Tetra Acetic Acid Compared to Self-Etching Adhesives and their Effect on Shear Bond Strength of Composites in Primary Teeth: An In-vitro Study

    PubMed Central

    Nagar, Priya; Tandil, Yogesh L.; T.P., Chandru; Gupta, Anamika; Kalaria, Devendra; Kumar, Prafful

    2015-01-01

    Background: Over the years, it has been known that 34% phosphoric acid is the benchmark in etchants with the best shear bond strength shown with composites in primary teeth. However, with latest technological advancements and innovations, in order to reduce the number of steps and less damage to the tooth structure, non-rinse conditioner (NRC) & Single-Etch and various other etchants have been tried and tested. These etchants have been found to have shear bond strength comparable to phosphoric acid. In this study, indigenously prepared 24% ethylenediaminetetraacetic acid (EDTA) has been compared with established etchants, as to prove if their shear bond strength was closely related. As it is a well-known fact that EDTA could be less damaging to the enamel during etching and hence can be an alternative for etching of primary teeth. Materials and Methods: For the study 60 caries-free primary molars were used, they were sectioned in the middle, after making area for bonding; the marked area was then etched using different etchants for 30 s. Each of the teeth was then rinsed and bonded with composite resin and thermocycling was done. Shear bond strength testing was done on the composite using Universal Testing Machine. Results: Results of the study showed that phosphoric acid showed the highest bond strength, closely followed by Single Etch (Adper Prompt) and NRC, then by EDTA. Conclusions: About 24% EDTA can be another comparable replacement for phosphoric acid if used with a Single Etch Primer, like Prime and Bond NT on primary teeth. 34% phosphoric acid has the highest bond strength values with composite resin. Single etch followed by NRC has the second and third highest bond strength values, which are comparable to phosphoric acid. PMID:26464540

  16. Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching.

    PubMed

    Tamura, Yosuke; Kaizu, Toshiyuki; Kiba, Takayuki; Igarashi, Makoto; Tsukamoto, Rikako; Higo, Akio; Hu, Weiguo; Thomas, Cedric; Fauzi, Mohd Erman; Hoshii, Takuya; Yamashita, Ichiro; Okada, Yoshitaka; Murayama, Akihiro; Samukawa, Seiji

    2013-07-19

    We successfully fabricated defect-free, distributed and sub-20-nm GaAs quantum dots (named GaAs nanodisks (NDs)) by using a novel top-down technique that combines a new bio-template (PEGylated ferritin) and defect-free neutral beam etching (NBE). Greater flexibility was achieved when engineering the quantum levels of ND structures resulted in greater flexibility than that for a conventional quantum dot structure because structures enabled independent control of thickness and diameter parameters. The ND height was controlled by adjusting the deposition thickness, while the ND diameter was controlled by adjusting the hydrogen-radical treatment conditions prior to NBE. Photoluminescence emission due to carrier recombination between the ground states of GaAs NDs was observed, which showed that the emission energy shift depended on the ND diameters. Quantum level engineering due to both diameter and thickness was verified from the good agreement between the PL emission energy and the calculated quantum confinement energy.

  17. Early bone response to sandblasted, dual acid-etched and H2O2/HCl treated titanium implants: an experimental study in the rabbit.

    PubMed

    He, F M; Yang, G L; Li, Y N; Wang, X X; Zhao, S F

    2009-06-01

    The aim of this study was to evaluate the influence of a roughened H(2)O(2)/HCl heat-treated titanium surface on peri-implant bone formation at an early stage in vivo. 24 Ti(6)Al(4)V alloy implants were used; half were treated by sandblasted and dual acid-etched treatments (control group), while the others were treated by sandblasted, dual acid-etched and H(2)O(2)/HCl heat treatments (test group). The morphology and roughness were analyzed by field emission SEM and atomic force microscopy. The implants were inserted into the femora of 12 adult white rabbits. After 2 and 4 weeks, femora block specimens were prepared for histological and histomorphometric analysis. SEM micrographs showed that multilevel and different sized pits were formed on both surfaces. New bone formation was observed on both implant surfaces. Test implants demonstrated a greater mean percentage of bone-implant contact as compared with controls at 2 (46.84 vs. 41.81, p=0.000) and 4 weeks (49.43 vs. 44.87, p=0.006) of healing. It is concluded that the H(2)O(2)/HCl heat-treated rough titanium surface promoted enhanced bone apposition during the early stages of new bone formation around the implant. PMID:19406618

  18. Ethylene Diamine Tetraacetic Acid Etched Quantum Dots as a "Turn-On" Fluorescence Probe for Detection of Trace Zinc in Food.

    PubMed

    Liu, Wei; Wei, Fangdi; Xu, Guanhong; Wu, Yanzi; Hu, Chunting; Song, Quan; Yang, Jing; Hu, Qin

    2016-06-01

    In the present paper, a simple and rapid "turn-on" fluorescence sensor for Zn2+ based on ethylene diamine tetraacetic acid (EDTA) etched CdTe quantum dots (QDs) was developed. First, the initial bright fluorescence of mercaptopropionic acid (MPA) capped CdTe QDs was effectively quenched by EDTA, and then the presence of Zn2+ could "turn on" the weak fluorescence of QDs quenched by EDTA due to the formation of ZnS passivation shell. The increase of fluorescence intensity of EDTA etched QDs was found to be linear with the concentration of Zn2+ added. Under the optimum conditions, the calibration curve of this method showed good linearity in the concentration range of 9.1-1 09.1 μM of Zn2+ with the correlation coefficient R2 = 0.998. The limit of detection (3σ/K) was 2 μM. The developed QDs-based sensor was successfully applied to detect trace zinc in zinc fortified table salts and energy drinks with satisfactory results. PMID:27427745

  19. Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

    PubMed

    Reshak, A H; Shahimin, M M; Shaari, S; Johan, N

    2013-11-01

    The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells. PMID:24139943

  20. Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

    PubMed

    Reshak, A H; Shahimin, M M; Shaari, S; Johan, N

    2013-11-01

    The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells.

  1. Optical fiber nanoprobe preparation for near-field optical microscopy by chemical etching under surface tension and capillary action.

    PubMed

    Mondal, Samir K; Mitra, Anupam; Singh, Nahar; Sarkar, S N; Kapur, Pawan

    2009-10-26

    We propose a technique of chemical etching for fabrication of near perfect optical fiber nanoprobe (NNP). It uses photosensitive single mode optical fiber to etch in hydro fluoric (HF) acid solution. The difference in etching rate for cladding and photosensitive core in HF acid solution creates capillary ring along core-cladding boundary under a given condition. The capillary ring is filled with acid solution due to surface tension and capillary action. Finally it creates near perfect symmetric tip at the apex of the fiber as the height of the acid level in capillary ring decreases while width of the ring increases with continuous etching. Typical tip features are short taper length (approximately 4 microm), large cone angle (approximately 38 degrees ), and small probe tip dimension (<100 nm). A finite difference time domain (FDTD) analysis is also presented to compare near field optics of the NNP with conventional nanoprobe (CNP). The probe may be ideal for near field optical imaging and sensor applications.

  2. Optimal conditions for the preparation of superhydrophobic surfaces on al substrates using a simple etching approach

    NASA Astrophysics Data System (ADS)

    Ruan, Min; Li, Wen; Wang, Baoshan; Luo, Qiang; Ma, Fumin; Yu, Zhanlong

    2012-07-01

    Many methods have been proposed to develop the fabrication techniques for superhydrophobic surfaces. However, such techniques are still at their infant stage and suffer many shortcomings. In this paper, the superhydrophobic surfaces on an Al substrate were prepared by a simple etching method. Effects of etching time, modifiers, and modification concentration and time were investigated, and optimal conditions for the best superhydrophobicity were studied. It was demonstrated that for etching the aluminum plate in Beck's dislocation, if the etching time was 15 s, modifier was Lauric acid-ethanol solution, and modification concentration and time was 5% and 1.5 h, respectively, the surface exhibited a water contact angle as high as 167.5° and a contact angle hysteresis as low as 2.3°.

  3. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  4. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  5. Bioanalytical applications of isothermal nucleic acid amplification techniques.

    PubMed

    Deng, Huimin; Gao, Zhiqiang

    2015-01-01

    The most popular in vitro nucleic acid amplification techniques like polymerase chain reaction (PCR) including real-time PCR are costly and require thermocycling, rendering them unsuitable for uses at point-of-care. Highly efficient in vitro nucleic acid amplification techniques using simple, portable and low-cost instruments are crucial in disease diagnosis, mutation detection and biodefense. Toward this goal, isothermal amplification techniques that represent a group of attractive in vitro nucleic acid amplification techniques for bioanalysis have been developed. Unlike PCR where polymerases are easily deactivated by thermally labile constituents in a sample, some of the isothermal nucleic acid amplification techniques, such as helicase-dependent amplification and nucleic acid sequence-based amplification, enable the detection of bioanalytes with much simplified protocols and with minimal sample preparations since the entire amplification processes are performed isothermally. This review focuses on the isothermal nucleic acid amplification techniques and their applications in bioanalytical chemistry. Starting off from their amplification mechanisms and significant properties, the adoption of isothermal amplification techniques in bioanalytical chemistry and their future perspectives are discussed. Representative examples illustrating the performance and advantages of each isothermal amplification technique are discussed along with some discussion on the advantages and disadvantages of each technique.

  6. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  7. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  8. Etching of Crystalline ZnO Surfaces upon Phosphonic Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers.

    PubMed

    Ostapenko, Alexandra; Klöffel, Tobias; Eußner, Jens; Harms, Klaus; Dehnen, Stefanie; Meyer, Bernd; Witte, Gregor

    2016-06-01

    Functionalization of metal oxides by means of covalently bound self-assembled monolayers (SAMs) offers a tailoring of surface electronic properties such as their work function and, in combination with its large charge carrier mobility, renders ZnO a promising conductive oxide for use as transparent electrode material in optoelectronic devices. In this study, we show that the formation of phosphonic acid-anchored SAMs on ZnO competes with an unwanted chemical side reaction, leading to the formation of surface precipitates and severe surface damage at prolonged immersion times of several days. Combining atomic force microscopy (AFM), X-ray diffraction (XRD), and thermal desorption spectroscopy (TDS), the stability and structure of the aggregates formed upon immersion of ZnO single crystal surfaces of different orientations [(0001̅), (0001), and (101̅0)] in phenylphosphonic acid (PPA) solution were studied. By intentionally increasing the immersion time to more than 1 week, large crystalline precipitates are formed, which are identified as zinc phosphonate. Moreover, the energetics and the reaction pathway of this transformation have been evaluated using density functional theory (DFT), showing that zinc phosphonate is thermodynamically more favorable than phosphonic acid SAMs on ZnO. Precipitation is also found for phosphonic acids with fluorinated aromatic backbones, while less precipitation occurs upon formation of SAMs with phenylphosphinic anchoring units. By contrast, no precipitates are formed when PPA monolayer films are prepared by sublimation under vacuum conditions, yielding smooth surfaces without noticeable etching. PMID:27159837

  9. Copper-assisted, anti-reflection etching of silicon surfaces

    SciTech Connect

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  10. Tobacco etch virus infectivity in Capsicum spp. is determined by a maximum of three amino acids in the viral virulence determinant VPg.

    PubMed

    Perez, Kari; Yeam, Inhwa; Kang, Byoung-Cheorl; Ripoll, Daniel R; Kim, Jinhee; Murphy, John F; Jahn, Molly M

    2012-12-01

    Potyvirus resistance in Capsicum spp. has been attributed to amino acid substitutions at the pvr1 locus that cause conformational shifts in eukaryotic translation initiation factor eIF4E. The viral genome-linked protein (VPg) sequence was isolated and compared from three Tobacco etch virus (TEV) strains, highly aphid-transmissible (HAT), Mex21, and N, which differentially infect Capsicum genotypes encoding Pvr1(+), pvr1, and pvr1(2). Viral chimeras were synthesized using the TEV-HAT genome, replacing HAT VPg with Mex21 or N VPg. TEV HAT did not infect pepper plants homozygous for either the pvr1 or pvr1(2) allele. However, the novel chimeric TEV strains, TEVHAT(Mex21-VPg) and TEV-HAT(N-VPg), infected pvr1 and pvr1(2) pepper plants, respectively, demonstrating that VPg is the virulence determinant in this pathosystem. Three dimensional structural models predicted interaction between VPg and the susceptible eIF4E genotype in every case, while resistant genotypes were never predicted to interact. To determine whether there is a correlation between physical interaction of VPg with eIF4E and infectivity, the effects of amino acid variation within VPg were assessed. Interaction between pvr1(2) eIF4E and N VPg was detected in planta, implying that the six amino acid differences in N VPg relative to HAT VPg are responsible for restoring the physical interaction and infectivity.

  11. Evaluation of dentin bonding performance and acid-base resistance of the interface of two-step self-etching adhesive systems.

    PubMed

    IIda, Yasuhiro; Nikaido, Toru; Kitayama, Shuzo; Takagaki, Tomohiro; Inoue, Go; Ikeda, Masaomi; Foxton, Richard M; Tagami, Junji

    2009-07-01

    The purpose of this study was to evaluate dentin bond strengths and to observe the adhesive-dentin interface after acid-base challenge using fluoride-free and fluoride-releasing self-etching adhesive systems; Clearfil SE Bond (SE), FL-Bond (FL) and FL-Bond II(FL II). Fifteen dentin surfaces from human molars were ground and bonded with one of three adhesive systems. The microtensile bond strength (muTBS) test was performed at a crosshead speed of 1 mm/min. The interface of the bonded specimens after acid-base challenge were also examined by a SEM. The muTBS of SE were significantly higher than those of FL and FL II (p<0.05), however, there were no significant differences between FL and FL II (p>0.05). An acid-base resistant zone (ABRZ) was observed in all the groups, however, formation of the ABRZ was material dependent. Fluoride-release from the adhesive is a key factor to create thick ABRZ.

  12. Source-control techniques for acid mine drainage

    SciTech Connect

    Hill, R.D.; Wilmoth, R.C.

    1985-10-01

    The potential for production of acidic discharges from mining activities is related to the pyritic concentration in the overburden and to the available alkalinity. Exposure of the pyritic material to weathering causes oxidation and the release of sulfuric acid. Source control techniques include pyrite segregation the selective burial, use of bacteriacides to retard bacterial catalysis, use of alkaline reagents to provide in-situ treatment, and the use of treatment systems to neutralize acidic drainages.

  13. Spinner For Etching Of Semiconductor Wafers

    NASA Technical Reports Server (NTRS)

    Lombardi, Frank

    1989-01-01

    Simple, inexpensive apparatus coats semiconductor wafers uniformly with hydrofluoric acid for etching. Apparatus made in part from small commercial electric-fan motor. Features bowl that collects acid. Silicon wafer placed on platform and centered on axis; motor switched on. As wafer spins, drops of hydrofluoric acid applied from syringe. Centrifugal force spreads acid across wafer in fairly uniform sheet.

  14. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  15. Dry etching technologies for reflective multilayer

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  16. Reactive Ion Etching for Randomly Distributed Texturing of Multicrystalline Silicon Solar Cells

    SciTech Connect

    ZAIDI, SALEEM H

    2002-05-01

    The quality of low-cost multicrystalline silicon (mc-Si) has improved to the point that it forms approximately 50% of the worldwide photovoltaic (PV) power production. The performance of commercial mc-Si solar cells still lags behind c-Si due in part to the inability to texture it effectively and inexpensively. Surface texturing of mc-Si has been an active field of research. Several techniques including anodic etching [1], wet acidic etching [2], lithographic patterning [3], and mechanical texturing [4] have been investigated with varying degrees of success. To date, a cost-effective technique has not emerged.

  17. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  18. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity

    NASA Astrophysics Data System (ADS)

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-01

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 μg ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical

  19. Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects.

    PubMed

    Grant, Nicholas E

    2016-01-01

    A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<10(12) cm(-3)).

  20. Graphene nanoribbons: Relevance of etching process

    SciTech Connect

    Simonet, P. Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  1. Etching rate control of mask material for XeF2 etching using UV exposure

    NASA Astrophysics Data System (ADS)

    Sugano, Koji; Tabata, Osamu

    2001-09-01

    A new technique to control etching rates of mask materials during XeF2 etching was proposed. By exposing Si sample with SiO2 and Si3N4 as mask materials to UV light of 3 W/cm2 during XeF2 etching, the etching rates of SiO2 and Si3N4 were dramatically increased from 2.52 angstrom/pulse to 42.0 angstrom/pulse and from 27.3 angstrom/pulse to 403 angstrom/pulse, respectively. This new technique allows us to remove the mask material selectively and change the mask pattern by UV light exposure during in- situ etching process without additional photolithography step and opens a new silicon micromachining process for 3- dimensional fabrication. The multi-step Si structure was successfully realized by this technique.

  2. Transferring resist microlenses into silicon by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Eisner, Martin; Schwider, Johannes

    1996-10-01

    Reactive ion etching (RIE) is known as an effective technique for high precision anisotropic etching with a minimum loss of the critical dimensions provided by the photoresist or other masking materials. RIE can also be used to transfer continuous forms such as spherical resist microlenses into substrate materials (e.g., quartz glass or silicon). The form of the lenses can be considerably controlled by changing the etch rate ratio between resist and the substrate. This was achieved by varying the etch gas compound, especially the amount of oxygen, during the etching or by changing the applied power. Measured etch rates for silicon are given to demonstrate the possibilities of lens shaping. The surface roughness of the etched lenses was one of the main problems. The roughness could be minimized by adding helium to the etch gases for heat removal and by increasing the resist rinse time after the wet chemical development.

  3. Evaluation of a no-rinse enamel conditioning prior to sealant application: an in vitro study of comparison to traditional etching technique.

    PubMed

    Vijayaraghavan, T V; Hsiao, J Y; Moss, S J

    1995-01-01

    Moisture contamination is a major factor in sealant application, often determining clinical success or failure. A new enamel conditioner using HNO3 (2.5%) has been introduced that does not require a water rinse after etching. The aim of this study is to compare etching characteristics using sealant retention from shear bond strength tests for traditional etch conditioning using H3PO4 (37%) and the HNO3 (2.5%) conditioner with and without a water rinse. We used 28 crown-intact extracted human teeth. We evaluated eight shear bond strength tests per group, on cylindrical sealant stubs (3.24 mm diameter x 3 mm height) for 12 groups (three etch conditions, two prophylactic methods, and two enamel surface type). The highest mean values of shear bond strength of 22.0 MPa was measured for H3PO4, and the lowest of 12.7 MPa for HNO3 (2.5%) without water wash. No significant differences (P < 0.05) were found between water rinse and air blast post-treatment groups after HNO3 conditioning. PMID:7567635

  4. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study.

    PubMed

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  5. Physico/chemical characterization and in vivo evaluation of nanothickness bioceramic depositions on alumina-blasted/acid-etched Ti-6Al-4V implant surfaces.

    PubMed

    Coelho, Paulo G; Lemons, Jack E

    2009-08-01

    The objective of this study was to physico/chemically characterize and evaluate the in vivo performance of two nanothickness ion beam assisted depositions (IBAD) of bioceramic coatings on implants in a beagle model. Alumina-blasted/acid-etched (AB/AE) Ti-6Al-4V implants were subjected to two different IBAD depositions (IBAD I and IBAD II), which were physico/chemically characterized by SEM, EDS, XPS, XPS + ion-beam milling (depth profiling), XRD, AFM, and ToF-SIMS. A beagle dog tibia model was utilized for histomorphometric and biomechanical (torque) comparison between AB/AE, IBAD I, IBAD II, and plasma-sprayed hydroxyapatite (PSHA) coated implants that remained in vivo for 3 and 5 weeks. The coatings were characterized as amorphous Ca-P with high Ca/P stoichiometries with thicknesses of an order of magnitude difference (IBAD I = 30-50 nm and IBAD II = 300-500 nm). The histomorphometric and biomechanical testing results showed that the 300-500 nm thickness deposition (IBAD II) and PSHA positively modulated bone healing at early implantation times. PMID:18508352

  6. Comparative Study of the Early Loading of Resorbable Blasting Media and Sandblasting with Large-grit and Acid-etching Surface Implants: A Retrospective Cohort Study

    PubMed Central

    Kim, Sung-Beom; Kim, Young-Kyun; Kim, Su-Gwan; Oh, Ji-Su; Kim, Byung-Hoon

    2014-01-01

    Purpose: This study compares the prognosis (the survival rate and marginal bone loss) of resorbable blasting media (RBM) surface implants and sandblasting with large-grit and acid-etching (SLA) surface implants in the early loading. Methods: This study targeted 123 patients treated by implants installation from January 2008 to March 2010. The loading was initiated in the maxilla within three to four months and in the mandible within one to two months. The types of restoration were single crown and fixed partial prosthesis. Those functioned over one year. The implants were classified by the surface of implants as Group 1: RBM surface (GS III; OSSTEM, Busan, Korea) and, Group 2: SLA surface (Superline; Dentium, Seoul, Korea). The groups were categorized by maxilla and mandible and compared by survival rate, marginal bone loss through clinical records evaluation, and radiographic measurements. Results: The marginal bone loss in the maxilla was 0.14±0.34 mm (Group 1) and 0.30±0.37 mm (Group 2), a statistically significant difference (P <0.05). In the mandible those were 0.28±0.54 mm (Group 1) and 0.20±0.33 mm (Group 2), not significant (P >0.05). There was no significant difference of marginal bone loss between maxilla and mandible by groups. During observation there was no implant failure, a survival rate of 100%. Conclusion: Both surfaces showed an excellent survival rate, and the marginal bone loss was not substantial. PMID:27489842

  7. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    PubMed

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method.

  8. Effect of erbium-doped: yttrium, aluminium and garnet laser irradiation on the surface microstructure and roughness of sand-blasted, large grit, acid-etched implants

    PubMed Central

    Lee, Ji-Hun; Kwon, Young-Hyuk; Herr, Yeek; Shin, Seung-Il

    2011-01-01

    Purpose The present study was performed to evaluate the effect of erbium-doped: yttrium, aluminium and garnet (Er:YAG) laser irradiation on sand-blasted, large grit, acid-etched (SLA) implant surface microstructure according to varying energy levels and application times of the laser. Methods The implant surface was irradiated by the Er:YAG laser under combined conditions of 100, 140, or 180 mJ/pulse and an application time of 1 minute, 1.5 minutes, or 2 minutes. Scanning electron microscopy (SEM) was used to examine the surface roughness of the specimens. Results All experimental conditions of Er:YAG laser irradiation, except the power setting of 100 mJ/pulse for 1 minute and 1.5 minutes, led to an alteration in the implant surface. SEM evaluation showed a decrease in the surface roughness of the implants. However, the difference was not statistically significant. Alterations of implant surfaces included meltdown and flattening. More extensive alterations were present with increasing laser energy and application time. Conclusions To ensure no damage to their surfaces, it is recommended that SLA implants be irradiated with an Er:YAG laser below 100 mJ/pulse and 1.5 minutes for detoxifying the implant surfaces. PMID:21811689

  9. Adult stem cells properties in terms of commitment, aging and biological safety of grit-blasted and Acid-etched ti dental implants surfaces.

    PubMed

    Gardin, Chiara; Ferroni, Letizia; Bressan, Eriberto; Calvo-Guirado, José L; Degidi, Marco; Piattelli, Adriano; Zavan, Barbara

    2014-01-01

    Titanium (Ti) is one of the most widely used biomaterials for manufacturing dental implants. The implant surface properties strongly influence osseointegration. The aim of the present study was to in vitro investigate the characteristics of Ti dental implants in terms of mutagenicity, hemocompatibility, biocompatibility, osteoinductivity and biological safety. The Ames test was used to test the mutagenicity of the Ti dental implants, and the hemolysis assay for evaluating their hemocompatibility. Human adipose - derived stem cells (ADSCs) were then seeded onto these implants in order to evaluate their cytotoxicity. Gene expression analyzing with real-time PCR was carried out to investigate the osteoinductivity of the biomaterials. Finally, the genetic stability of the cells cultured onto dental implants was determined by karyotyping. Our results demonstrated that Ti dental implants are not mutagenic, do not cause hemolysis, and are biocompatible. The MTT assay revealed that ADSCs, seeded on Ti dental implants, proliferate up to 30 days in culture. Moreover, ADSCs loaded on Ti dental implants show a substantial expression of some osteoblast specific markers, such as COL1A1, OPN, ALPL, and RUNX2, as well as chromosomal stability after 30 days of culture in a medium without osteogenic factors. In conclusion, the grit-blasted and acid-etched treatment seems to favor the adhesion and proliferation of ADSCs and improve the osteoinductivity of Ti dental implant surfaces.

  10. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    PubMed Central

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  11. Adult Stem Cells Properties in Terms of Commitment, Aging and Biological Safety of Grit-Blasted and Acid-Etched Ti Dental Implants Surfaces

    PubMed Central

    Gardin, Chiara; Ferroni, Letizia; Bressan, Eriberto; Calvo - Guirado, José L.; Degidi, Marco; Piattelli, Adriano; Zavan, Barbara

    2014-01-01

    Titanium (Ti) is one of the most widely used biomaterials for manufacturing dental implants. The implant surface properties strongly influence osseointegration. The aim of the present study was to in vitro investigate the characteristics of Ti dental implants in terms of mutagenicity, hemocompatibility, biocompatibility, osteoinductivity and biological safety. The Ames test was used to test the mutagenicity of the Ti dental implants, and the hemolysis assay for evaluating their hemocompatibility. Human adipose - derived stem cells (ADSCs) were then seeded onto these implants in order to evaluate their cytotoxicity. Gene expression analyzing with real-time PCR was carried out to investigate the osteoinductivity of the biomaterials. Finally, the genetic stability of the cells cultured onto dental implants was determined by karyotyping. Our results demonstrated that Ti dental implants are not mutagenic, do not cause hemolysis, and are biocompatible. The MTT assay revealed that ADSCs, seeded on Ti dental implants, proliferate up to 30 days in culture. Moreover, ADSCs loaded on Ti dental implants show a substantial expression of some osteoblast specific markers, such as COL1A1, OPN, ALPL, and RUNX2, as well as chromosomal stability after 30 days of culture in a medium without osteogenic factors. In conclusion, the grit-blasted and acid-etched treatment seems to favor the adhesion and proliferation of ADSCs and improve the osteoinductivity of Ti dental implant surfaces. PMID:25635249

  12. Distinguishing shocked from tectonically deformed quartz by the use of the SEM and chemical etching

    USGS Publications Warehouse

    Gratz, A.J.; Fisler, D.K.; Bohor, B.F.

    1996-01-01

    Multiple sets of crystallographically-oriented planar deformation features (PDFs) are generated by high-strain-rate shock waves at pressures of > 12 GPa in naturally shocked quartz samples. On surfaces, PDFs appear as narrow (50-500 nm) lamellae filled with amorphosed quartz (diaplectic glass) which can be etched with hydrofluoric acid or with hydrothermal alkaline solutions. In contrast, slow-strain-rate tectonic deformation pressure produces wider, semi-linear and widely spaced arrays of dislocation loops that are not glass filled. Etching samples with HF before examination in a scanning electron microscope (SEM) allows for unambiguous visual distinction between glass-filled PDFs and glass-free tectonic deformation arrays in quartz. This etching also reveals the internal 'pillaring' often characteristic of shock-induced PDFs. This technique is useful for easily distinguishing between shock and tectonic deformation in quartz, but does not replace optical techniques for characterizing the shock features.

  13. In vivo assessment of bone ingrowth potential of three-dimensional e-beam produced implant surfaces and the effect of additional treatment by acid etching and hydroxyapatite coating.

    PubMed

    Biemond, J Elizabeth; Hannink, Gerjon; Jurrius, Annemarijn M G; Verdonschot, Nico; Buma, Pieter

    2012-03-01

    The bone ingrowth potential of three-dimensional E-beam-produced implant surfaces was examined by histology and compared to a porous plasma-sprayed control. The effects of acid etching and a hydroxyapatite (HA) coating were also evaluated by histology. Specimens were implanted in the distal femur of 10 goats. Histological analysis of bone ingrowth was performed 6 weeks after implantation. The E-beam-produced surfaces showed significantly better bone ingrowth compared to the plasma-sprayed control. Additional treatment of the E-beam surface structures with a HA coating, further improved bone ingrowth potential of these structures significantly. Acid etching of the E-beam structures did not influence bone ingrowth significantly. In conclusion, the HA-coated, E-beam-produced structures are promising potential implant surfaces.

  14. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    PubMed Central

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  15. Er:YAG laser radiation etching of enamel

    NASA Astrophysics Data System (ADS)

    Dostalova, Tatjana; Jelinkova, Helena; Krejsa, Otakar; Hamal, Karel; Kubelka, Jiri; Prochazka, Stanislav

    1996-12-01

    This study compares the effects of acid treatment and Er:YAG laser radiation on the enamel. The permanent human molars were used. Oval cavities in the buccal surface were prepared and the edges of cavities were irradiated by Er:YAG radiation. The energy of laser was 105 mJ and repetition rate 1 Hz. The radiation was focused by CaF2 lens and the sample was placed in the focus. Ten samples were etched by 35 percent phosphoric acid during 60 s. Than cavities were filled with composite resin following manufacturers directions. By laser etching the structure enamel in section was rougher. The optimal connection between the enamel and composite resin was achieved in 75 percent by acid etching and in 79.2 percent by Er:YAG laser etching. Er:YAG laser etching could be alternative method for etching of enamel.

  16. Research on wet etching at MEMS torsion mirror optical switch

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Wang, Jifeng; Luo, Yuan

    2002-10-01

    Etching is a very important technique at MEMS micromachining. There are two kinds of etching processing, the one is wet etching and the other is dry etching. In this paper, wet selective etching with KOH and tetramethyl ammonium hydroxide (TMAH) etchants is researched in order to make a torsion mirror optical switch. The experiments results show that TMAH with superphosphate is more suitable at MEMS torsion mirror optical switch micromachining than KOH, and it also has good compatibility with IC processing. Also our experiments results show some different with other reported research data. More work will be done to improve the yield rate of MEMS optical switch.

  17. Metal etching with reactive gas cluster ion beams using pickup cell

    SciTech Connect

    Toyoda, Noriaki; Yamada, Isao

    2012-11-06

    Mixed gas cluster ion beams were formed using pickup cell for metal etching. O{sub 2} neutral clusters pick up acetic acid and formed mixed cluster beam. By using O{sub 2}-GCIB with acetic acid, enhancement of Cu etching was observed. Because of dense energy deposition by GCIB, etching of Cu proceeds by CuO formation, enhancement of chemical reaction with acetic acid and desorption of etching products. Surface roughening was not observed on poly crystalline Cu because of the small dependence of etching rate on crystal orientation. Halogen free and low-temperature metal etching with GCIB using pickup cell is possible.

  18. Metal etching with reactive gas cluster ion beams using pickup cell

    NASA Astrophysics Data System (ADS)

    Toyoda, Noriaki; Yamada, Isao

    2012-11-01

    Mixed gas cluster ion beams were formed using pickup cell for metal etching. O2 neutral clusters pick up acetic acid and formed mixed cluster beam. By using O2-GCIB with acetic acid, enhancement of Cu etching was observed. Because of dense energy deposition by GCIB, etching of Cu proceeds by CuO formation, enhancement of chemical reaction with acetic acid and desorption of etching products. Surface roughening was not observed on poly crystalline Cu because of the small dependence of etching rate on crystal orientation. Halogen free and low-temperature metal etching with GCIB using pickup cell is possible.

  19. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  20. Epoxy bond and stop etch fabrication method

    DOEpatents

    Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  1. The isotopic composition of zinc, palladium, silver, cadmium, tin, and tellurium in acid-etched residues of the Allende meteorite

    SciTech Connect

    Loss, R.D.; Rosman, K.J.R.; De Laeter, J.R. )

    1990-12-01

    The isotopic and elemental abundances of Zn, Pd, Ag, Cd, Sn, and Te have been measured in three acid-resistant residues extracted from the Allende meteorite. High-efficiency, low-contamination ion-exchange procedures were developed to separate and purify the nanogram amounts of these elements present. Elemental-abundance determinations performed by Mass Spectrometric Isotope Dilution agree with previously published work for similarly derived residues. No isotope anomalies similar to those found for Xe (Xe-HL) in these samples were detected for any of these elements, which is consistent with the residues not being derived directly from the Xe-HL carriers. The lack of major Te-isotope anomalies does not support earlier reports of {sup 126}Te and {sup 130}Te excesses which were measured by neutron activation in similar samples. Small excesses were detected in the minor isotopes of Sn and Te, but these may be due to measurement problems associated with the small ion currents obtained for these samples. Two of the residue solutions contain Cd with up to several percent excesses for {sup 106}Cd and {sup 108}Cd. Interpretations of these results are limited by the unknown nature of the carrier minerals in the residues but may indicate the presence of a p-process component in Allende residues.

  2. Microleakage and penetration depth of three types of materials in fissure sealant: self-etching primer vs etching: an in vitro study.

    PubMed

    Gillet, D; Nancy, J; Dupuis, V; Dorignac, G

    2002-01-01

    Clinical preventive procedures must be done after a risk assessment. One of the risk factors is the occlusal morphology of the posterior teeth. These caries-free fissures must be sealed. This first in vitro experimentation of the study evaluated the microleakage and the penetration depth of three types of materials by Vivadent: Helioseal F, Tetric, Tetric Flow. The teeth were etched with phosphoric acid and bonded using a one bottle bonding in order to determine the best material for the sealing of the fissure. The depth of penetration of fuschine dye as well as that of the tested material was measured with a grid. The results, compared to the depth of the fissures, are expressed in percentage of penetration. The results were as follows: penetration of fuschine dye: 0% for the 2 composites, 100% for Helioseal F; penetration of the materials: 96.90% for Helioseal F, 70.82 for Tetric and 86.10 for Tetric Flow (significant difference, Wilcoxon test = 0.0105). In this first in vitro study, Tetric Flow shows no microleakage and is more efficient when compared to Helioseal F and Tetric in obturating deep fissures of non carious bicuspids. The second experiment of the study evaluated the microleakage and the penetration depth of Tetric Flow when it is bonded by two different methods: Group 1: total etch (phosphoric acid) and Scotch-bond 1 (3M), and Group 2: self-etching primer with Prompt (Espe). There was no significant difference (p > 0.03) between classical bonding vs self-etching primer. The self-etching primer Prompt is very efficient vs phosphoric acid in obturating the fissures of non carious bicuspids with Tetric Flow. It is concluded that for prevention by sealing, using a flowable ceromer (Tetric Flow) with the self-etching (Prompt), is a really good technique.

  3. New observations on the ultrastructure of mammalian conducting airway epithelium: application of liquid propane freezing, deep etching, and rotary shadowing techniques to freeze-fracture.

    PubMed

    Carson, J L; Collier, A M; Smith, C A

    1984-10-01

    Freshly isolated, viable hamster tracheal epithelium was rapidly frozen in a jet of liquid nitrogen-cooled propane followed by freeze-fracture, deep etching, and rotary shadowing. Examination of the replicas by transmission electron microscopy revealed characteristic features of both ciliated and nonciliated cells, profiles of tight junctional complexes, and two distinct types of membrane particle complexes. The findings of this study suggest that rapid freezing of viable biological specimens coupled with freeze-fracture, deep etching, and rotary shadowing may provide a useful approach to achieving some additional perspectives of cell structure and function. Since the experimental protocol avoided any use of chemical fixation and processing procedures generally employed in electron microscopy, this study also validates for airway epithelium the details of fine structure observed using more conventional ultrastructural methods. PMID:6544880

  4. Nanoparticle-based etching of silicon surfaces

    DOEpatents

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  5. Five-year retrospective radiographic follow-up study of dental implants with sandblasting with large grit, and acid etching-treated surfaces

    PubMed Central

    2015-01-01

    Objectives The purpose of this study is to evaluate five-year radiographic follow-up results of the Korean sandblasting with large grit, and acid etching (SLA)-treated implant system. Materials and Methods The subjects of the study are 54 patients who have been followed-up to date, of the patients who underwent implant surgery from May 1, 2009 to April 30, 2011. In all, 176 implant placements were performed. Radiographs were taken before the first surgery, immediately after the first and second surgeries, immediately and six months after the final prosthesis installation, and every year after that. Bone loss was evaluated by the method suggested by Romanos and Nentwig. Results A total of 176 implant placements were performed-122 in men and 54 in women. These patients have been followed-up for an average of 4.9 years. In terms of prosthetic appliances, there were 156 bridges and 20 single prostheses. Nine implants installed in the maxillary molar area, three in the mandibular molar area and two in the maxillary premolar area were included in group M, with bone loss less than 2 mm at the crestal aspect of the implant. Of these, eight implants were single prostheses. In all, six implants failed-four in the mandible and two in the maxilla. All of these failures occurred in single-implant cases. The implant survival rate was 98.1% on the maxilla and 94.3% on the mandible, with an overall survival of 96.6%. Conclusion Within the limitations of this study, implants with the SLA surface have a very superior survival rate in relatively poor bone environments such as the maxilla. PMID:26734558

  6. Chemical etching of deformation sub-structures in quartz

    NASA Astrophysics Data System (ADS)

    Wegner, M. W.; Christie, J. M.

    1983-02-01

    Chemical etching of dislocations has been studied in natural and synthetic quartz single crystals, in deformed synthetic quartz and in naturally and experimentally deformed quartzites. The ability of different etchants to produce polished or preferentially etched surfaces on quartz is described. Dislocation etching was achieved on all crystal planes examined by using a saturated solution of ammonium bifluoride as the etchant. Appropriate etching times were determined for etching quartzites for grain size, subgrain boundaries, deformation lamellae, dislocations and twins. Growth and polished surfaces of synthetic single crystal quartz were similarly etched and dislocation etch pits, characteristic of various orientations were found. The use of ammonium bifluoride proved to be expecially advantageous for the basal plane, producing a polished surface with etch pits, suitable for dislocation etch pit counting. “Double” etch pits have been found on Dauphiné twin boundaries on the basal plane and the first order prism, using this etchant. Slip lines and deformation bands were suitably etched on deformed synthetic crystal surfaces for identification of the slip planes. Other acidic etchants have been explored and their application to the study of deformation structures in quartz crystals is discussed.

  7. Evaluation of a chemical etching solution for nickel-chromium-beryllium and chromium-cobalt alloys.

    PubMed

    Ferrari, M; Cagidiaco, M C; Borracchini, A; Bertelli, E

    1989-11-01

    Two chemical etching solutions were capable of providing micromechanical retention in two nickel-chromium-beryllium alloys and in a chromium-cobalt alloy. A resin matrix was used to verify the quality of etching on the metal surfaces. The chemical etching solutions created high microretentive surfaces in nickel-chromium-beryllium alloy but the chromium-cobalt alloy surfaces after etching were less retentive. Improved chemical etching technique should encourage expanded use of the resin-bonded retainers.

  8. Modeling Wet Chemical Etching of Surface Flaws on Fused Silica

    SciTech Connect

    Feit, M D; Suratwala, T I; Wong, L L; Steele, W A; Miller, P E; Bude, J D

    2009-10-28

    Fluoride-based wet chemical etching of fused silica optical components is useful to open up surface fractures for diagnostic purposes, to create surface topology, and as a possible mitigation technique to remove damaged material. To optimize the usefulness of etching , it is important to understand how the morphology of etched features changes as a function of the amount of material removed. In this study, we present two geometric etch models that describe the surface topology evolution as a function of the amount etched. The first model, referred to as the finite-difference etch model, represents the surface as an array of points in space where at each time-step the points move normal to the local surface. The second model, referred to as the surface area-volume model, more globally describes the surface evolution relating the volume of material removed to the exposed surface area. These etch models predict growth and coalescence of surface fractures such as those observed on scratches and ground surfaces. For typical surface fractures, simulations show that the transverse growth of the cracks at long etch times scales with the square root of etch time or the net material removed in agreement with experiment. The finite-difference etch model has also been applied to more complex structures such as the etching of a CO{sub 2} laser-mitigated laser damage site. The results indicate that etching has little effect on the initial morphology of this site implying little change in downstream scatter and modulation characteristics upon exposure to subsequent high fluence laser light. In the second part of the study, the geometric etch model is expanded to include fluid dynamics and mass transport. This later model serves as a foundation for understanding related processes such as the possibility of redeposition of etch reaction products during the etching, rinsing or drying processes.

  9. Dynamics of ion-assisted etching

    NASA Astrophysics Data System (ADS)

    Sebel, Petrus Gerardus Maria

    In this thesis a study is presented on the fundamentals of ion-assisted etching of silicon. The research was performed in the Atomic Physics and Quantum Electronics Group (AQT/B) of the Physics Department at the Eindhoven University of Technology. Etching is a key technique in the production process of integrated circuits. Industrial etching is usually done in a plasma reactor. However, to unravel the detailed mechanisms determining the etch process, a different approach was chosen. In this scheme, well defined beams of XeF2 and Ar + ions are directed towards the Si sample in an ultra-high vacuum (UHV) setup. In this way the relevant ingredients of a plasma (neutrals and ions) are simulated. The etching reaction is monitored by a quadruple mass spectrometer (QMS) which detects the desorption of non-reacted XeF2 and the main reaction products SiF4 and SiF2. We conclude that we have obtained a detailed microscopic picture of the etching of silicon by beams of neutrals and ions. However, there is still a gap between beam etching and plasma etching. To bridge this gap an ellipsometer has been added to our setup, because it is a common non-invasive diagnostic tool used in a plasma reactor. In addition, also a sample exchange mechanism was installed to facilitate the frequent exchange of samples. The first ellipsometric results of spontaneous etching show the construction of a reaction layer followed by surface roughening. The XeF2 dose needed to build the reaction layer as derived from the ellipsometric results is in good agreement with results from the mass spectrometer. Additional experiments have to be performed to obtain a full understanding of the roughening of the surface, but a first link between microscopic and macroscopic features has been established. (Abstract shortened by UMI.)

  10. Feasibility of hydrofluoric acid etched sand particles for enrichment and determination of polychlorinated biphenyls at trace levels in environmental water samples.

    PubMed

    Xing, Han-Zhu; Chen, Xiang-Feng; Wang, Xia; Wang, Ming-Lin; Zhao, Ru-Song

    2014-06-01

    This study aims to investigate the feasibility of etched sand particles being used as solid-phase extraction adsorbents to enrich polychlorinated biphenyls (PCBs), which are typical persistent organic pollutants in the environment, at trace levels. Gas chromatography-tandem mass spectrometry was selected to detect the compounds. Etched sand particles exhibited excellent merits on the enrichment of PCBs. Related important factors affecting extraction efficiencies were investigated and optimized in detail. Under optimized conditions, low limits of detection (0.42 to 3.69 ng L(-1)), wide linear range (10 to 1,000 ng L(-1)), and high repeatability (1.9 to 8.2%) were achieved. The developed method was validated with several real water samples, and satisfactory results were obtained. All of these findings indicate that etched sand particles would be useful for the enrichment and determination of organic pollutants at trace levels in water samples.

  11. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  12. Black Germanium fabricated by reactive ion etching

    NASA Astrophysics Data System (ADS)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the <110> crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to <2.5 % for normal incidence and still to <6 % at an angle of incidence of 70°. The presented Black Germanium might find applications as low-cost AR structure in optoelectronics and IR optics.

  13. Anisotropic etching of Al by a directed Cl2 flux

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Mountain, R. W.; Lincoln, G. A.; Randall, J. N.

    1986-01-01

    A new Al etching technique is described that uses an ion beam from a Kaufman ion source and a directed Cl2 flux. The ion beam is used primarily to remove the native oxide and to allow the Cl2 to spontaneously react with the Al film forming volatile Al2Cl6. By controlling both the flux equivalent pressure of Cl2 and the ion beam current, this etching technique makes possible the anisotropic etching of Al with etch rates from 100 nm/min to nearly 10 microns/min with a high degree of selectivity.

  14. Evaluation of different enamel conditioning techniques for orthodontic bonding

    PubMed Central

    Ulusoy, Çagrı

    2012-01-01

    Objective The aim of this study was to compare the effects of different enamel conditioning techniques for bracket bonding. Methods Ninety-one human premolars were randomly divided in six groups of 15 specimens each. The enamel surfaces of the teeth were etched with 35% orthophosphoric acid in Group 1, with a self-etching primer in Group 2, sandblasted in Group 3, sandblasted and etched with 35% orthophosphoric acid in Group 4, conditioned by Er:YAG laser in Group 5 and conditioned by Er:YAG laser and etched with 35% phosphoric acid gel respectively in Group 6. After enamel conditioning procedures, brackets were bonded and shear bonding test was performed. After debonding, adhesive remnant index scores were calculated for all groups. One tooth from each group were inspected by scanning electron microscope for evaluating the enamel surface characteristics. Results The laser and acid etched group showed the highest mean shear bond strength (SBS) value (13.61 ± 1.14 MPa) while sandblasted group yielded the lowest value (3.12 ± 0.61 MPa). Conclusions Although the SBS values were higher, the teeth in laser conditioned groups were highly damaged. Therefore, acid etching and self-etching techniques were found to be safer for orthodontic bracket bonding. Sandblasting method was found to generate inadequate bonding strength. PMID:23112929

  15. Spray etching 2 µm features in 304 stainless steel

    NASA Astrophysics Data System (ADS)

    Chatterjee, Sudipta; Ujihara, Motoki; Lee, Dong Gun; Chen, Jerry; Lei, Stanley; Carman, Greg P.

    2006-12-01

    304 stainless steel samples were patterned with either a photoresist (PR) mask or a silicon nitride (Si3Ni4) mask and then subjected to either wet immersion etching or spray etching techniques with ferric chloride (FeCl3). The silicon nitride mask provides much better adhesion to the stainless steel substrate resulting in less undercut compared to the PR mask. When a silicon nitride mask was subjected to spray etching, better adhesion and less undercut enabled features as small as 1.8 µm with an etch depth of 5.6 µm. This is an order of magnitude smaller than current spray etching techniques (20-50 µm) used in the steel industry. This procedure will allow spray etching features for batch fabrication for a variety of metals including steels, aluminum, nickel-based alloys and copper-based alloys with microscale resolution.

  16. Bulk filling of Class II cavities with a dual-cure composite: Effect of curing mode and enamel etching on marginal adaptation

    PubMed Central

    Bortolotto, Tissiana; Roig, Miguel; Krejci, Ivo

    2014-01-01

    Objectives: This study attempted to find a simple adhesive restorative technique for class I and II cavities on posterior teeth. Study Design: The tested materials were a self-etching adhesive (Parabond, Coltène/Whaledent) and a dual-cure composite (Paracore, Coltène/Whaledent) used in bulk to restore the cavities. Class II MO cavities were performed and assigned to 4 groups depending on the orthophosphoric acid (H3PO4) conditioning of enamel and polymerization method used (chemical or dual). Specimens were subjected to quantitative marginal analysis before and after thermo-mechanical loading. Results: Higher percentages of marginal adaptation at the total margin length, both before and after thermo-mechanical loading, were found in groups in which enamel was etched with phosphoric acid, without significant differences between the chemically and dual-cured modes. The restorations performance was similar on enamel and dentin, obtaining low results of adaptation on occlusal enamel in the groups without enamel etching, the lowest scores were on cervical dentin in the group with no ortophosphoric acid and self-cured. Conclusions: A dual-cure composite applied in bulk on acid etched enamel obtained acceptable marginal adaptation results, and may be an alternative technique for the restoration of class II cavities. Key words:Dual-cure composite, bulk technique, class II restoration, selective enamel etching, marginal adaptation. PMID:25674316

  17. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  18. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  19. Ground-based intercomparison of nitric acid measurement techniques

    NASA Astrophysics Data System (ADS)

    Fehsenfeld, Fred C.; Huey, L. Greg; Sueper, Donna T.; Norton, Richard B.; Williams, Eric J.; Eisele, Fred L.; Mauldin, R. Lee; Tanner, David J.

    1998-02-01

    An informal intercomparison of gas-phase nitric acid (HNO3) measuring techniques was carried out. The intercomparison involved two new chemical ionization mass spectrometers (CIMSs) that have been developed for the measurement of HNO3 along with an older, more established filter pack (FP) technique. The filter pack was composed of a teflon prefilter which collected aerosols followed by a nylon filter which collected the gas-phase HNO3. The study was carried out during the late winter and early spring of 1996 at a site located on the western edge of the Denver metropolitan area. Throughout the study the two CIMS techniques were in general agreement. However, under certain conditions the HNO3 levels obtained from the nylon filter of the FP gave values for the gas-phase concentration of HNO3 that were somewhat higher than that recorded by the two CIMS systems. The formation of ammonium nitrate (NH4NO3) containing aerosols is common during the colder months in this area. An analysis of these results suggests that the HNO3 collected by the nylon filter in the FP suffers an interference associated with the disproportionation of NH4NO3 from aerosols containing that compound that were initially collected on the teflon prefilter. This problem with the FP technique has been suggested from results obtained in previous intercomparisons.

  20. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  1. Laser-assisted dry etching of III-nitride wide band gap semiconductor materials

    NASA Astrophysics Data System (ADS)

    Leonard, Robert Tyler

    Laser assisted dry etching is a materials processing technique capable of producing highly anisotropic etch features with precise etch depth control and little contamination. The technique is simple: laser radiation is combined with a gaseous chemical etchant to remove material in pattern selected regions. The advantages of laser etching include the removal of etch products with photonic energy instead of ion bombardment, potential of projected patterning to combine growth and etching in situ without exposure to air, production of distinct sidewall etch features for device structures, and precise control of etching with a highly directional pulsed laser energy source. The use of pulsed laser radiation allows for pulsed etch depth control, ultimately resulting in atomic layer control. Laser assisted dry HCl etching of GaN, AlGaN and InGaN optical device materials was first demonstrated in our laboratory at North Carolina State University in a modified UHV vacuum chamber and ArF (193nm) excimer laser. Effective masking materials of Al and SiOsb2 were determined to be resistant to laser heating and HCl environment for laser etching. The process variables of laser intensity and HCl pressure were found to be dominant with the necessary condition that no etching occurs without both the excimer laser and HCl present. Successful laser etching of GaN, AlGaN, and InGaN was demonstrated indicating that deep etch features with distinct sidewall features are possible with this technique. Laser etching of a III-Nitride quantum well double heterostructure resulted in no degradation of the photoluminescence response. Also, reduction of etch damage with laser etching may be possible in comparison to ion etching. Finally, a proposed model for the etching mechanism includes the photothermal release of nitrogen from the GaN surface resulting in a Ga-rich surface which is removed by the HCl etchant.

  2. Recipes and Techniques for Producing Artist's Materials.

    ERIC Educational Resources Information Center

    School Arts, 1979

    1979-01-01

    Instructions are given for making oil ground, glue gesso, glue water size, oil colors, damar varnish, water colors, encaustic painting, egg tempera painting, etching inks, etching grounds, etching acids, and sugar-lift. (SJL)

  3. ECR, ICP, and RIE plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Rieger, D.J.; Hafich, M.J.

    1996-06-01

    The group III-nitrides continue to generate interest due to their wide band gaps and high dielectric constants. These materials have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs). Realization of more advanced devices; including lasers and high temperature electronics, requires dry etch processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {mu}m/min. In this paper, we compare electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) etch results for GaN. These are the first ICP etch results reported for GaN. We also report ECR etch rates for GaN as a function of growth technique.

  4. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  5. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  6. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  7. Dry-wet digital etching of Ge1-xSnx

    NASA Astrophysics Data System (ADS)

    Shang, Colleen K.; Wang, Vivian; Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Pao, James J.; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Harris, James S.

    2016-02-01

    The development of a precise micromachining process for Ge1-xSnx has the potential to enable both the fabrication and optimization of Ge1-xSnx-based devices in photonics and microelectromechanical systems. We demonstrate a digital etching scheme for Ge0.922Sn0.078 based on a two-stage, highly selective CF4 plasma dry etch and HCl wet etch. Using X-Ray Reflectivity, we show consistent etch control as low as 1.5 nm per cycle, which is defined as one dry etch step followed by one wet etch step. The etch rate increases to 3.2 nm per cycle for a longer dry etch time due to physical sputtering contributions, accompanied by an increase in RMS surface roughness. By operating within a regime with minimal sputtering, we demonstrate that good digital etch depth control and surface quality can be achieved using this technique.

  8. Systematically controlling Kapitza conductance via chemical etching

    NASA Astrophysics Data System (ADS)

    Duda, John C.; Hopkins, Patrick E.

    2012-03-01

    We measure the thermal interface conductance between thin aluminum films and silicon substrates via time-domain thermoreflectance from 100 to 300 K. The substrates are chemically etched prior to aluminum deposition, thereby offering a means of controlling interface roughness. We find that conductance can be systematically varied by manipulating roughness. In addition, transmission electron microscopy confirms the presence of a conformal oxide for all roughnesses, which is then taken into account via a thermal resistor network. This etching process provides a robust technique for tuning the efficiency of thermal transport while alleviating the need for laborious materials growth and/or processing.

  9. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  10. A novel colonic anastomosis technique involving fixed polyglycolic acid mesh

    PubMed Central

    Aysan, Erhan; Bektas, Hasan; Ersoz, Feyzullah; Sari, Serkan; Kaygusuz, Arslan

    2010-01-01

    Background: Polyglycolic acid mesh (PAM) reinforcement of colonic anastomoses were evaluated. Methods: Twenty female albino rabbits were divided into two groups. Each rabbit underwent segmental colonic resection with single-layer anastomosis. In one group of rabbits, PAM of length equal to the circumference of the anastomosis was applied. Rabbits were sacrificed on postoperative day 10 and peritoneal adhesions, anastomosis burst pressure, and anastomosis histopathological characteristics were evaluated. Results: The average burst pressure for the control and PAM groups was 149±15.95 mmHgand 224±124.5 mmHg, respectively (p=0.578). All control anastomoses burst, whereas only five (50%) PAM anastomoses burst (p<0.03). There was no anastomotic leakage in the control group, whereas three PAM group anastomoses leaked (p=0.210). The collagen fiber density and amount of neovascularization were lower in the PAM than the control group (p=0.001 and p=0.002, respectively). The average peritoneal adhesion value was 1.6±0.51 in the control group and 2.9±0.31 in the PAM group (p<0.0001). Conclusion: The new fixed PAM-reinforced anastomosis technique resulted in an increased risk of anastomosis leakage and peritoneal adhesion, but also higher in non-burst anastomoses. PMID:21072268

  11. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma

    SciTech Connect

    Hareland, W.A.; Buss, R.J.

    1993-06-01

    Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.

  12. Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaolong; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2015-11-01

    In this work, we introduce an optimum ICP etching technique that successfully removes the subsurface damage (SSD) layer of fused silica without causing plasma induced surface damage (PISD) or lateral etching of SSD. As one of the commonest PISD initiators, metal contamination from reactor chamber is prevented by employing a simple isolation device. Based on this device, a unique low-density pitting damage is discovered and subsequently eliminated by optimizing the etching parameters. Meanwhile etching anisotropy also improves a lot, thus preventing the lateral etching of SSD. Using this proposed technique, SSD layer of fused silica is successfully removed with a surface roughness of 0.23 nm.

  13. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  14. Environmentally benign semiconductor processing for dielectric etch

    NASA Astrophysics Data System (ADS)

    Liao, Marci Yi-Ting

    Semiconductor processing requires intensive usage of chemicals, electricity, and water. Such intensive resource usage leaves a large impact on the environment. For instance, in Silicon Valley, the semiconductor industry is responsible for 80% of the hazardous waste sites contaminated enough to require government assistance. Research on environmentally benign semiconductor processing is needed to reduce the environmental impact of the semiconductor industry. The focus of this dissertation is on the environmental impact of one aspect of semiconductor processing: patterning of dielectric materials. Plasma etching of silicon dioxide emits perfluorocarbons (PFCs) gases, like C2F6 and CF4, into the atmosphere. These gases are super global warming/greenhouse gases because of their extremely long atmospheric lifetimes and excellent infrared absorption properties. We developed the first inductively coupled plasma (ICP) abatement device for destroying PFCs downstream of a plasma etcher. Destruction efficiencies of 99% and 94% can be obtained for the above mentioned PFCs, by using O 2 as an additive gas. Our results have lead to extensive modeling in academia as well as commercialization of the ICP abatement system. Dielectric patterning of hi-k materials for future device technology brings different environment challenges. The uncertainty of the hi-k material selection and the patterning method need to be addressed. We have evaluated the environmental impact of three different dielectric patterning methods (plasma etch, wet etch and chemical-mechanical polishing), as well as, the transistor device performances associated with the patterning methods. Plasma etching was found to be the most environmentally benign patterning method, which also gives the best device performance. However, the environmental concern for plasma etching is the possibility of cross-contamination from low volatility etch by-products. Therefore, mass transfer in a plasma etcher for a promising hi

  15. Consideration of VT5 etch-based OPC modeling

    NASA Astrophysics Data System (ADS)

    Lim, ChinTeong; Temchenko, Vlad; Kaiser, Dieter; Meusel, Ingo; Schmidt, Sebastian; Schneider, Jens; Niehoff, Martin

    2008-03-01

    Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this functionality nowadays; yet few were implemented in manufacturing due to various risks considerations such as compromises in resist and optical effects prediction, etch model accuracy or even runtime concern. Conventional method of applying rule-based alongside resist model is popular but requires a lot of lengthy code generation to provide a leaner OPC input. This work discusses risk factors and their considerations, together with introduction of techniques used within Mentor Calibre VT5 etch-based modeling at sub 90nm technology node. Various strategies are discussed with the aim of better handling of large etch bias offset without adding complexity into final OPC package. Finally, results were presented to assess the advantages and limitations of the final method chosen.

  16. Etching patterns of Co-Cr alloys for bonded cast restorations.

    PubMed

    Ekstrand, K; Ruyter, I E

    1987-09-01

    Resin-bonded bridges may replace missing teeth and act as splints in periodontal treatment. The objective of this study was to investigate the etch pattern after electrolytic etching of selected Co-Cr alloys in hydrochloric acid and to assess the changes in alloy composition after different etching times. The alloys investigated were Vitallium, Wironit, Wironium, Nobilium Hard, and Niranium NN. Alloy specimens were electrolytically etched in a hydrochloric acid solution for 1, 2, 5, and 10 min. The etched specimens were examined in a light microscope and a scanning electron microscope (SEM). Different etching patterns were revealed in the various alloys. Microprobe analyses after the etching of Vitallium showed generally that Co was released and that Cr content increased at the surface. PMID:3305640

  17. The influence of varying sputter deposition conditions on the wet chemical etch rate of AlN thin films

    NASA Astrophysics Data System (ADS)

    Ababneh, A.; Kreher, H.; Seidel, H.; Schmid, U.

    2007-05-01

    Aluminium nitride (AlN) reactively sputter deposited from an aluminium target is an interesting compound material due to its CMOS compatible fabrication process and its piezoelectric properties. For the implementation in micromachined sensors and actuators an appropriate patterning technique is needed to form AlN-based elements. Therefore, the influence of different sputtering conditions on the vertical etch rate of AlN thin films with a typical thickness of 600 nm in phosphoric acid (H 3PO 4) is investigated. Under comparable conditions, such as temperature and concentration of the etchant, thin films with a high c-axis orientation are etched substantially slower compared to films with a low degree of orientation. When a high c-axis orientation is present detailed analyses of the etched topologies reveal surface characteristics with a low porosity and hence, low roughness values. From temperature dependant etching experiments an activation energy of 800 (+/- 30) meV is determined showing a reaction-controlled etching regime independent of sputter deposition conditions.

  18. Focused electron-beam-induced etching of silicon dioxide

    SciTech Connect

    Randolph, S.J.; Fowlkes, J.D.; Rack, P.D.

    2005-08-01

    Focused electron-beam (FEB)-induced etching of silicon dioxide with xenon difluoride has been investigated as a selective nanoscale etching technique. In order to gain an understanding of the parameters that control etch rate and etch efficiency, the effects of beam current, beam energy, and scan rate conditions on the FEB process were examined. High etch rates were obtained for low beam energy, high beam current, and high scan rates. Experimental results also indicated that the FEB etch process is governed by the electron-stimulated desorption of oxygen from the SiO{sub 2} matrix, and subsequently rate limited by XeF{sub 2} availability. Based on experimental evidence and existing literature, a simple, two-step model was introduced to qualitatively describe the etch mechanism. The model involves a cyclical process, which is initiated by the reduction of a surface layer of SiO{sub 2} to elemental silicon. The exposed silicon surface is then removed by a chemical-mediated etch reaction.

  19. Differential etching of chalcogenides for infrared photonic waveguide structures

    SciTech Connect

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2007-10-10

    Chemical etching rates for two different chalcogenide glass compositions (As2S3 and As24S38Se38) were studied using sodium hydroxide based etchant solutions. Etching was performed using a variation of standard photolithographic masking and wet-etching techniques. Variations in etch rate with NaOH concentration and glass composition were observed. The depth of etch was characterized using an optical profilometer. Etch rate differences as large as three orders of magnitude between these two glasses were observed at low NaOH concentration (0.053 M). We present a single variable etch rate curve of etch depth per time (nm/s) versus NaOH overall solution concentration (in M) for these two different chalcogenide glasses (As2S3 and As24S38Se38). This technology shows promise for fabricating highly asymmetrical photonic structures and has potential applications in fabricating novel photonic bandgap (PBG) structures that will function in the long-wave infrared (LWIR) regime.

  20. Focused electron-beam-induced etching of silicon dioxide

    NASA Astrophysics Data System (ADS)

    Randolph, S. J.; Fowlkes, J. D.; Rack, P. D.

    2005-08-01

    Focused electron-beam (FEB)-induced etching of silicon dioxide with xenon difluoride has been investigated as a selective nanoscale etching technique. In order to gain an understanding of the parameters that control etch rate and etch efficiency, the effects of beam current, beam energy, and scan rate conditions on the FEB process were examined. High etch rates were obtained for low beam energy, high beam current, and high scan rates. Experimental results also indicated that the FEB etch process is governed by the electron-stimulated desorption of oxygen from the SiO2 matrix, and subsequently rate limited by XeF2 availability. Based on experimental evidence and existing literature, a simple, two-step model was introduced to qualitatively describe the etch mechanism. The model involves a cyclical process, which is initiated by the reduction of a surface layer of SiO2 to elemental silicon. The exposed silicon surface is then removed by a chemical-mediated etch reaction.

  1. Effect of various de-anodizing techniques on the surface stability of non-colored and colored nanoporous AAO films in acidic solution

    NASA Astrophysics Data System (ADS)

    Awad, Ahmed M.; Shehata, Omnia S.; Heakal, Fakiha El-Taib

    2015-12-01

    Anodic aluminum oxide (AAO) is well known as an important nanostructured material, and a useful template in the fabrication of nanostructures. Nanoporous anodic alumina (PAA) with high open porosity was prepared by adopting three de-anodizing regimes following the first anodizing step and preceding the second one. The de-anodizing methods include electrolytic etching (EE) and chemical etching using either phosphoric acid (PE) or sodium hydroxide (HE) solutions. Three of the obtained AAO samples were black colored by electrodeposition of copper nanoparticles in their pores. Electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization techniques were used to characterize the electrochemical performance of the two sets of the prepared samples. In general, the data obtained in aggressive aerated 0.5 M HCl solution demonstrated dissimilar behavior for the three prepared samples despite that the second anodizing step was the same for all of them. The data indicated that the resistance and thickness of the inner barrier part of nano-PAA film, are the main controlling factors determining its stability. On the other hand, coloring the film decreased its stability due to the galvanic effect. The difference in the electrochemical behavior of the three colored samples was discussed based on the difference in both the pore size and thickness of the outer porous part of PAA film as supported by SEM, TEM and cross-sectional micrographs. These results can thus contribute for better engineering applications of nanoporous AAO.

  2. Bond strength between resin composite and etched and non-etched glass ionomer.

    PubMed

    Zanata, R L; Navarro, M F; Ishikiriama, A; da Silva e Souza Júnior, M H; Delazari, R C

    1997-01-01

    The authors evaluated, in vitro, the effects of etching glass ionomer cements prior to the application of a bonding agent and a resin composite on the bond strength of the glass ionomer/resin composite interface. Six glass ionomer cements were tested using the same bonding agent/resin composite system (Scotchbond Multipurpose/Z 100). For each material, 16 specimens were prepared and divided into two groups. Eight of the specimens were not etched while eight were etched with 37% phosphoric acid for 15 seconds. All the materials were used according to the manufacturers' instructions. Glass ionomer cylinders were prepared and were mounted in an assembly apparatus and the bonding agent/resin composite transferred to a demarcated area on the cement surface. The specimens were stored for 24 hours in distilled water at 37 degrees C and thermocycled. After thermocycling, the specimens were placed in a testing machine and a shear load applied with a knife-edged rod at the glass ionomer/resin composite interface. The shear bond strength was calculated and expressed in MPa. Data were analyzed by ANOVA and the Tukey-Kramer test. There were no significant differences among the shear bond strengths of the resin composite to etched and non-etched glass ionomer cements.

  3. Hybrid and Etch-Less Electrooptic Waveguide Modulator Based on Photo-Bleaching and Strain Induced Optical Waveguide Technique in Polymer.

    PubMed

    Kim, Richard; Kang, Byeong-Mo; Jeong, Woon-Jo; Jung, Yang-June; Park, Hyuk-Reol; Kim, Chang-Dae; So, Soon-Youl; Lee, Jin; Park, Gye-Choon; Park, Yongjun

    2016-02-01

    A hybrid and etchless electrooptic (EO) polymer waveguide modulator based on both a photo-bleaching-induced optical waveguide (PBOW) and a strain-induced optical waveguide (SIOW) is described. The SIOW is defined by a metal strip line stressor deposited on top of the upper cladding that introduces the refractive index change within the core region. The PBOW technique is used to form an optical waveguide which is based on a photo-bleaching process, known as a photo-oxidation that is an irreversible decomposition of EO material, resulting in a permanent decrease in index of refraction. It is shown that this proposed fabrication idea combining two etchless techniques can be applicable to a wide range of polymer photonic integrated circuits. Preliminary results obtained from fabricated devices reveal that their half-wave voltage are ranging from 8 V to 10 V, their extinction ratio exhibits more than 15 dB, and the fiber-to-waveguide-to-lens loss is estimated to be ~9.5 dB for TM polarization at 1.55/m wavelength in the active interaction of ~1.5 cm long.

  4. Temporal fossa defects: techniques for injecting hyaluronic acid filler and complications after hyaluronic acid filler injection.

    PubMed

    Juhász, Margit Lai Wun; Marmur, Ellen S

    2015-09-01

    Facial changes with aging include thinning of the epidermis, loss of skin elasticity, atrophy of muscle, and subcutaneous fat and bony changes, all which result in a loss of volume. As temporal bones become more concave, and the temporalis atrophies and the temporal fat pad decreases, volume loss leads to an undesirable, gaunt appearance. By altering the temporal fossa and upper face with hyaluronic acid filler, those whose specialty is injecting filler can achieve a balanced and more youthful facial structure. Many techniques have been described to inject filler into the fossa including a "fanned" pattern of injections, highly diluted filler injection, and the method we describe using a three-injection approach. Complications of filler in the temporal fossa include bruising, tenderness, swelling, Tyndall effect, overcorrection, and chewing discomfort. Although rare, more serious complications include infection, foreign body granuloma, intravascular necrosis, and blindness due to embolization into the ophthalmic artery. Using reversible hyaluronic acid fillers, hyaluronidase can be used to relieve any discomfort felt by the patient. Injectors must be aware of the complications that may occur and provide treatment readily to avoid morbidities associated with filler injection into this sensitive area. PMID:26311237

  5. Optical properties of quantum energies in GaAs quantum nanodisks produced using a bio-nanotemplate and a neutral beam etching technique

    NASA Astrophysics Data System (ADS)

    Ohori, Daisuke; Fukuyama, Atsuhiko; Thomas, Cedric; Higo, Akio; Samukawa, Seiji; Ikari, Tetsuo

    2016-09-01

    We demonstrated that the lattice-matched GaAs quantum nanodisks (QNDs) embedded in an AlGaAs matrix were fabricated by our original top-down nanoprocess. Lattice-matched GaAs QNDs are very attractive in quantum cryptography because the spin relaxation time of QNDs might be longer than that of strained quantum dots. Quantum levels of QNDs were investigated by the photoluminescence (PL) technique. The minimum diameter and thickness of QNDs were 7 and 8 nm, respectively. PL peaks of QNDs at 1.64 and 1.66 eV were observed to be higher than that of multiple quantum wells (MQWs) observed at 1.57 eV. It is suggested that these peaks are due to the diameter distribution of QNDs. The calculated quantum levels were in good agreement with the present experimental results. The observation of the PL peaks from QNDs demonstrates that the quantum level is strongly confined not only in the perpendicular direction but also in the lateral direction.

  6. Chlorine-based dry etching of β-Ga2O3

    NASA Astrophysics Data System (ADS)

    Hogan, Jack E.; Kaun, Stephen W.; Ahmadi, Elaheh; Oshima, Yuichi; Speck, James S.

    2016-06-01

    Reactive ion etching (RIE) and inductively coupled plasma (ICP) etching techniques were used to determine the optimal dry etch conditions for β-Ga2O3. RF power and chamber pressure were examined to study their effects on etch rate and surface roughness for three crystallographic planes, i.e., (100); (010); and (\\bar{2}01) by RIE. BCl3 etch rate calibrations were performed on all β-Ga2O3 planes studied, in comparison to Cl2. RIE yielded moderate etch rates (<20 nm min‑1), and surface roughness showed no clear trend with RF power. Moreover, the effect of bias power, plasma power, and the choice of etchant were studied using ICP. The etches performed by ICP were shown to be superior to RIE in both etch rate and surface roughness, due to the much higher plasma densities and uniformities possible with plasma powers beyond those realized in RIE. The maximum etch rate of 43.0 nm min‑1 was achieved using BCl3 in ICP. SF6/BCl3 mixtures, which yield high GaN etch rates, were also studied. However, in contrast to GaN etching, SF6/BCl3 was found to be far less effective than pure BCl3 in etching β-Ga2O3.

  7. Formation of nanostructured silicon surfaces by stain etching

    PubMed Central

    2014-01-01

    In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min. PMID:25435830

  8. Scanning electron microscopy evaluation of the effect of etching agents on human enamel surface.

    PubMed

    Zanet, Caio G; Arana-Chavez, Victor E; Fava, Marcelo

    2006-01-01

    Acid etching promotes microporosities on enamel surface, which provide a better bonding surface to adhesive materials. The purpose of this study was to comparatively analyze the microstructure of enamel surface after etching with 37% phosphoric acid or with two self-etching primers, Non-rinse conditioner (NRC) and Clearfil SE Bond (CSEB) using scanning electron microscopy. Thirty sound premolars were divided into 3 groups with ten teeth each: Group 1: the buccal surface was etched with 37% phosphoric acid for 15 seconds; Group 2: the buccal surface was etched with NRC for 20 seconds; Group 3: the buccal surface was etched with CSEB for 20 seconds. Teeth from Group 1 were rinsed with water; teeth from all groups were air-dried for 15 seconds. After that, all specimens were processed for scanning electron microscopy and analyzed in a Jeol 6100 SEM. The results showed deeper etching when the enamel surface was etched with 37% phosphoric acid, followed by NRC and CSEB. It is concluded that 37% phosphoric acid is still the best agent for a most effective enamel etching. PMID:16683674

  9. Applications of synchrotron-based spectroscopic techniques in studying nucleic acids and nucleic acid-functionalized nanomaterials.

    PubMed

    Wu, Peiwen; Yu, Yang; McGhee, Claire E; Tan, Li Huey; Lu, Yi

    2014-12-10

    In this review, we summarize recent progress in the application of synchrotron-based spectroscopic techniques for nucleic acid research that takes advantage of high-flux and high-brilliance electromagnetic radiation from synchrotron sources. The first section of the review focuses on the characterization of the structure and folding processes of nucleic acids using different types of synchrotron-based spectroscopies, such as X-ray absorption spectroscopy, X-ray emission spectroscopy, X-ray photoelectron spectroscopy, synchrotron radiation circular dichroism, X-ray footprinting and small-angle X-ray scattering. In the second section, the characterization of nucleic acid-based nanostructures, nucleic acid-functionalized nanomaterials and nucleic acid-lipid interactions using these spectroscopic techniques is summarized. Insights gained from these studies are described and future directions of this field are also discussed.

  10. Applications of synchrotron-based spectroscopic techniques in studying nucleic acids and nucleic acid-functionalized nanomaterials

    PubMed Central

    Wu, Peiwen; Yu, Yang; McGhee, Claire E.; Tan, Li Huey

    2014-01-01

    In this review, we summarize recent progresses in the application of synchrotron-based spectroscopic techniques for nucleic acid research that takes advantage of high-flux and high-brilliance electromagnetic radiation from synchrotron sources. The first section of the review focuses on the characterization of the structure and folding processes of nucleic acids using different types of synchrotron-based spectroscopies, such as X-ray absorption spectroscopy, X-ray emission spectroscopy, X-ray photoelectron spectroscopy, synchrotron radiation circular dichroism, X-ray footprinting and small-angle X-ray scattering. In the second section, the characterization of nucleic acid-based nanostructures, nucleic acid-functionalized nanomaterials and nucleic acid-lipid interactions using these spectroscopic techniques is summarized. Insights gained from these studies are described and future directions of this field are also discussed. PMID:25205057

  11. A high efficiency industrial polysilicon solar cell with a honeycomb-like surface fabricated by wet etching using a photoresist mask

    NASA Astrophysics Data System (ADS)

    Zhang, Hong; Ding, Bin; Chen, Tianhang

    2016-11-01

    In this paper, an effective and low cost method of texturization was introduced into the fabrication process for industrial multicrystalline silicon solar cell production. The purpose of the method was to reduce reflectance by creating a honeycomb-like textured surface using a masked wet etching process. A negative photoresist film was selected as an etching mask. Although large surface roughness of wafer was considered to affect the adhesion and acid resistance of etching mask, a honeycomb-like textured surface with a pitch of 18 μm was fabricated successfully. The etched pits had a nearly smooth spherical segment surface, an average aperture of 15.1 μm, and a depth of 6.5 μm. This regular textured surface had a low light reflectivity of approximately 20.5% and greatly increased the carrier lifetime. Compared with multicrystalline silicon solar cells textured by conventional acid etching, the average short circuit current increased by 2.2% and the average efficiency increased from 17.41% to 17.75%, a net gain of 0.34%. And a high throughput above 2400 pieces per hour was obtained. This texturing technique is expected to promote the application of diamond-wire cut multicrystalline silicon wafers with the low saw-damage in the future.

  12. Intercomparison of Nitrous Acid (HONO) Measurement Techniques during SHARP

    NASA Astrophysics Data System (ADS)

    Pinto, J. P.; Meng, Q.; Dibb, J. E.; Lefer, B. L.; Rappenglueck, B.; Ren, X.; Stutz, J.; Zhang, R.

    2010-12-01

    HONO is regarded as a potentially important radical precursor in a number of diverse environments ranging from polar to semi-tropical. As part of the SHARP (Study of Houston Atmospheric Radical Precursors), time series of HONO were obtained by five different measurement techniques. Techniques used were long path differential optical absorption spectroscopy (DOAS), long-path absorption photometry (LoPAP), mist chamber (MC), quantum cascade laser and ionization detection-chemical ionization mass spectrometry. Various combinations of techniques were in operation during the whole period from 15 April through 31 May 2009 with a common measurement period extending from 16 to 28 May. All instruments recorded a similar diurnal pattern of HONO concentrations with higher mean values from the in-situ techniques than either the low- or mid-path DOAS. The largest differences among techniques were found during the afternoon with measurements from the in-situ techniques higher than either the low- or mid-path DOAS. Principal components analysis using measurements of trace species was used to identify possible sources of interference in the chemical measurements. Two major components were identified: one associated with primary, mainly traffic related pollutants and the other with photochemical species. The afternoon differences between DOAS and MC and the U Miami LoPAP were found to be most strongly associated with the photochemical component. The results for comparison between DOAS and MC are in accord with those found previously during August-September 2006. All instruments showed some association between measurement differences and the primary component. Further details and associations with air coming from different areas of the Houston airshed will also be presented.

  13. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver

    NASA Astrophysics Data System (ADS)

    Chen, Chia-Yun; Wong, Ching-Ping

    2014-12-01

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag

  14. Improvement of photocatalytic activity of brookite titanium dioxide nanorods by surface modification using chemical etching

    NASA Astrophysics Data System (ADS)

    Zhang, Linjie; Menendez-Flores, Victor M.; Murakami, Naoya; Ohno, Teruhisa

    2012-05-01

    Surface morphology of brookite titanium dioxide (TiO2) nanorods was modified by chemical etching with aqueous hydrogen (H2O2)-ammonia (NH3) or sulfuric acid (H2SO4) solution. The brookite nanorods after chemical etching were characterized by TEM, SAED, FE-SEM, XRD and specific surface area measurements. Brookite nanorods after chemical etching with H2O2-NH3 solution exposed new crystal faces in the tips, and nanorods with sharper tips were observed. On the other hand, etching with H2SO4 at 200 °C induced morphological changes in the tip faces and broadened the angle between tip faces as a result of dissolution along the [0 0 1] direction, though brookite nanorods were only slightly etched after etching with H2SO4 at room temperature. Photocatalytic activity of brookite nanorods was tested by toluene decomposition in gas phase under ultraviolet irradiation. Brookite nanorods etched with H2O2-NH3 solution showed higher photocatalytic activity than that of brookite nanorods before etching. In the case of H2SO4 etching at 200 °C, brookite nanorods after etching exhibited lower photocatalytic activity. One reason for this may be that the formation of newly exposed crystal faces by H2O2-NH3 etching improved separation of redox sites due to their strong oxidation ability.

  15. Rate controlled metal assisted chemical etching to fabricate vertical and uniform Si nanowires

    NASA Astrophysics Data System (ADS)

    Song, Ari; Yun, Seokhun; Lokhande, Vaibhav; Ji, Taeksoo

    2016-03-01

    Mac(metal assisted chemical) etching is a simple, low-cost and anisotropic etching method to make Si NWs (silicon nanowires). In this method, smaller surface area is damaged compared to dry etching process, either. Mac etching uses a combination of an oxide removal acid (e.g. HF), an oxidant (e.g. H2O2) with a noble metal (e.g. Au, Ag, Pt, etc.) as the catalyst. Typically, the Si beneath the noble metal is etched faster than the Si without noble metal coverage by electron transfer mechanism at the noble metal /solution and the noble metal/Si interface. While Mac etching to build Si NWs, unwanted etching occurs in the bulk silicon layer resulting from excess hole diffusion caused by the increase in hole concentration at the nearby metal layers. In this study, we explored the ratio of oxidant to oxide removal acid in the Mac etching solution that is most effective in etching the Si underneath the noble metal layer suppressing the unwanted etching. At the optimized ratio, Si NWs were fabricated at a faster rate with good uniformity.

  16. Study of an Acid-Free Technique for the Preparation of Glycyrrhetinic Acid from Ammonium Glycyrrhizinate in Subcritical Water.

    PubMed

    Lekar, Anna V; Borisenko, Sergey N; Vetrova, Elena V; Filonova, Olga V; Maksimenko, Elena V; Borisenko, Nikolai I; Minkin, Vladimir I

    2015-11-01

    The aim of this work was to study an application of a previously developed expedient acid-free technique for the preparation of glycyrrhetinic acid from ammonium glycyrrhizinate that requires no use of acids and toxic organic solvents. Subcritical water that serves as a reactant and a solvent was used in order to obtain glycyrrhetinic acid in good yields starting from ammonium glycyrrhizinate. It has been shown that variation of only one parameter of the process (temperature) allows alteration to thecomposition of the hydrolysis products. A new method was used for the synthesis of glycyrrhetinic acid (glycyrrhizic acid aglycone) and its monoglycoside. HPLC combined with mass spectrometry and NMR spectroscopy were used to determine the quantitative and qualitative compositions of the obtained products. The method developed for the production of glycyrrhetinic acid in subcritical water is environmentally friendly and faster than conventional hydrolysis methods that use acids and-expensive and toxic organic solvents. The proposed technique has a potential for the future development of inexpensive and environmentally friendly technologies for production of new pharmaceutical plant-based substances. PMID:26749800

  17. Submicron patterned metal hole etching

    DOEpatents

    McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

    2000-01-01

    A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

  18. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    SciTech Connect

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  19. Surface kinetics modeling of silicon and silicon oxide plasma etching. III. Modeling of silicon oxide etching in fluorocarbon chemistry using translating mixed-layer representation

    SciTech Connect

    Kwon, Ohseung; Bai Bo; Sawin, Herbert H.

    2006-09-15

    Silicon oxide etching was modeled using a translating mixed-layer model, a novel surface kinetic modeling technique, and the model showed good agreement with measured data. Carbon and fluorine were identified as the primary contributors to deposition and etching, respectively. Atomic fluorine flux is a major factor that determines the etching behavior. With a chemistry having a small amount of atomic fluorine (such as the C{sub 4}F{sub 8} chemistry), etching yield shows stronger dependence on the composition change in the gas flux.

  20. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  1. Improvement in etching rate for epilayer lift-off with surfactant

    NASA Astrophysics Data System (ADS)

    Wu, Fan-Lei; Horng, Ray-Hua; Lu, Jian-Heng; Chen, Chun-Li; Kao, Yu-Cheng

    2013-03-01

    In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm / min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

  2. Low-frequency process for silicon-on-insulator deep reactive ion etching

    NASA Astrophysics Data System (ADS)

    Wasilik, Matthew; Pisano, Albert P.

    2001-11-01

    Due to the inherently non-uniform etching effects in the standard DRIE (Deep Reactive Ion Etch) process, a new technique has been developed specifically for SOI (silicon on insulator) etching. The new system embodies a separate LF power supply that is pulsed when being applied to the platen during the etch cycle. This lends itself to assisting in the reduction of ionic charging at the insulator layer in deep trenches. Consequently, notching or footing of Si structures is disallowed. From this a decrease in over etch sensitivity emerges, with the end result being the ability to produce high-quality, large aspect ratio structures. Si etch rates in the same DRIE process may differ due to three basic effects: Aspect ratio dependent etch (ARDE), microloading (RIE-lag), and the general loading effect by which edges of the substrate etch faster than the center. When etching to a buried insulating layer these effects tend to indirectly encourage footing. The purpose of the research involved was to find optimal process parameters that would minimize footing. Factorial design of experiment technique was used to accomplish this in a two step process. First, main and second order effects on etch-rate uniformity were studied. Then, once supplied with process parameters that minimize uniformity effects, parameter settings that minimize footing were found. The end result is a purse of optimized DRIE-SOI recipes that produce superb high-aspect ratio Silicon structures.

  3. Wet etching studies of aluminum nitride bulk crystals and their sublimation growth by microwaves

    NASA Astrophysics Data System (ADS)

    Zhuang, Dejin

    The research described in this dissertation was motivated by the need of bulk AlN single crystals to improve the quality of group III nitride based devices. In this dissertation, first the evolution of semiconductors is reviewed. Second, historical reviews and recent advances of AlN crystal growth are presented. Third, the experimental setup and characterization methods are described. Finally, four papers regarding wet etching and sublimation growth of AlN are attached: (1) AlN bulk crystal growth using microwaves as heat source; (2) a review of wet etching of GaN and AlN; (3) anisotropic etching technique for identifying AlN crystal polarities; and (4) defect-selective etching to reveal dislocations in Al-polar crystals. Single crystalline AIN platelets up to 2 x 3 mm2 and needles 3 mm long were successfully grown by directly heating the source materials with microwaves. The grown crystals were characterized by optical microscopy, photoluminescence (PL), Raman spectroscopy, synchrotron white beam X-ray topography (SWBXT), and defect-selective etching. The grown crystals have good structural quality, with etch pit density as low as 103 cm -2. A peak positioned at 5.5 eV in PL spectra was attributed to magnesium impurities, presumably originating from the source materials. The wet etchings of GaN and AlN by electrochemical etching and defect-selective etching are reviewed. The mechanism of each etching process and etching conditions resulting in highly anisotropic, dopant-type/bandgap selective, defect-selective, and smooth surfaces are discussed. The applications of wet etching techniques in device fabrication and crystal characterization are also reviewed. The anisotropic etching technique for AlN crystals was successfully developed. Aqueous KOH solution did not attack Al-polar surfaces, but produced hexagonal hillocks on N-polar surfaces. The etching results suggested that freely nucleated AlN crystals predominately have the Al polarity facing the source

  4. Bond strength with various etching times on young permanent teeth

    SciTech Connect

    Wang, W.N.; Lu, T.C. )

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  5. Pattern inspection of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2015-10-01

    Patterned mask inspection for an etched multilayer (ML) EUV mask was investigated. In order to optimize the mask structure from the standpoint of not only a pattern inspection by using a projection electron microscope (PEM), but also by considering the other fabrication processes using electron beam (EB) techniques such as CD metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients (SEECs) of the candidate materials for conductive layer, we evaluated the image contrast and the influence of charging effect. In the cases of 40-pair-ML, 16 nm sized extrusion and intrusion defects were found to be detectable more than 10 sigma in hp 44 nm, 40 nm, and 32 nm line and space (L/S) patterns. Reducing 40-pair-ML to 20-pair-ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16 nm sized defects remained detectable. These defects were also detected after the etched part was refilled with Si. Moreover, the simulation shows a high sensitivity for detecting the residual-type defects (etching residues). A double layer structure with 2.5-nm-thik B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  6. Laser etching of polymer masked leadframes

    NASA Astrophysics Data System (ADS)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  7. Etching and Growth of GaAs

    NASA Technical Reports Server (NTRS)

    Seabaugh, A. C.; Mattauch, R., J.

    1983-01-01

    In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

  8. Etching properties and electrical characterization of surfaces of silicon-on-insulator substrates in presence of halogens

    SciTech Connect

    Abbadie, A.; Hamaide, G.; Chaupin, M.; Brunier, F.; Mariolle, D.; Martinez, E.; Maehliss, J.

    2012-03-15

    We have studied the etching properties of silicon-on-insulator (SOI) substrates in recently developed chromium-free solutions containing halogens. We have shown that the presence of halogen compounds X (I{sup -}, Br{sup -}...) in HF/HNO{sub 3}/CH{sub 3}COOH solutions is required for a selective and preferential etching on SOI. The etching rate of such solutions increases with the dissolved halogen concentrations. The chemical reactivity of Si-X (X = Br{sup -}, I{sup -}..) bonds has been analyzed by X-ray Photoelectron Spectroscopy (XPS), Pseudo-MOS (flatband potential) and Kelvin Force Microscopy (KFM) measurements. A negative shift of flatband potential values is explained by an increasing concentration of halogen compounds in the solution and a substitution of Si-H (F) bonds by Si-X bonds during the reaction. Though Si-X bonds, and more particularly Si-I bonds, have been confirmed only at trace levels using XPS, we believe that the formation of Si-X bonds is supported by a mechanism of surface dipoles. Unexpectedly, no significant change in work function could be detected using KFM measurements. Some suggestions, based on KFM technique improvements, are made to explain such results. Finally, though the interaction mechanism between silicon, fluoride, iodide, and nitric acid is not clearly elucidated by our experimental results, the formation of Si-halogen bonds is crucial for etching and defect decoration capability.

  9. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    PubMed

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  10. Etching properties and electrical characterization of surfaces of silicon-on-insulator substrates in presence of halogens

    NASA Astrophysics Data System (ADS)

    Abbadie, A.; Hamaide, G.; Mariolle, D.; Chaupin, M.; Brunier, F.; Martinez, E.; Mähliß, J.

    2012-03-01

    We have studied the etching properties of silicon-on-insulator (SOI) substrates in recently developed chromium-free solutions containing halogens. We have shown that the presence of halogen compounds X (I-, Br-…) in HF/HNO3/CH3COOH solutions is required for a selective and preferential etching on SOI. The etching rate of such solutions increases with the dissolved halogen concentrations. The chemical reactivity of Si-X (X = Br-, I-..) bonds has been analyzed by X-ray Photoelectron Spectroscopy (XPS), Pseudo-MOS (flatband potential) and Kelvin Force Microscopy (KFM) measurements. A negative shift of flatband potential values is explained by an increasing concentration of halogen compounds in the solution and a substitution of Si-H (F) bonds by Si-X bonds during the reaction. Though Si-X bonds, and more particularly Si-I bonds, have been confirmed only at trace levels using XPS, we believe that the formation of Si-X bonds is supported by a mechanism of surface dipoles. Unexpectedly, no significant change in work function could be detected using KFM measurements. Some suggestions, based on KFM technique improvements, are made to explain such results. Finally, though the interaction mechanism between silicon, fluoride, iodide, and nitric acid is not clearly elucidated by our experimental results, the formation of Si-halogen bonds is crucial for etching and defect decoration capability.

  11. The hydrochloric acid-pumice microabrasion technique in the treatment of post-orthodontic decalcification.

    PubMed

    Welbury, R R; Carter, N E

    1993-08-01

    A significant number of patients exhibit white spots of enamel decalcification after orthodontic treatment, despite the use of preventive regimes. The hydrochloric acid-pumice micro-abrasion technique offers a method for improving the appearance of these lesions where they are cosmetically unacceptable. The clinical procedure is described and the effects of the technique upon the dental structures are discussed.

  12. Decontamination of metals using chemical etching

    DOEpatents

    Lerch, Ronald E.; Partridge, Jerry A.

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  13. Study of oxide etching for MOSFET-based MEMS-bio sensor

    NASA Astrophysics Data System (ADS)

    Sharma, Vikas; Sachdev, K.; Khanna, V. K.

    2013-02-01

    This paper reports on the wet etching using buffer HF solution and dry etching by reactive ion etching technique of thermally grown SiO2 acting as field oxide. This field oxide layer forms source-drain window in ISFET devices based on Metal Oxide-Semiconductor Field-Effect Transistor (MOSFET) for their potential device application. The resultant pattern is measured by surface profiling of MOSFET structure using 500 × 20 μm2 gate dimensions mask.

  14. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    PubMed

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

  15. Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties

    NASA Astrophysics Data System (ADS)

    Gao, Qingxue; Liu, Rong; Xiao, Hongdi; Cao, Dezhong; Liu, Jianqiang; Ma, Jin

    2016-11-01

    A strong phase-separated InGaN/GaN layer, which consists of multiple quantum wells (MQW) and superlattices (SL) layers and can produce a blue wavelength spectrum, has been grown on n-GaN thin film, and then fabricated into nanoporous structures by electrochemical etching method in oxalic acid. Scanning electron microscopy (SEM) technique reveals that the etching voltage of 8 V leads to a vertically aligned nanoporous structure, whereas the films etched at 15 V show branching pores within the n-GaN layer. Due to the low doping concentration of barriers (GaN layers) in the InGaN/GaN layer, we observed a record-low rate of etching (<100 nm/min) and nanopores which are mainly originated from the V-pits in the phase-separated layer. In addition, there exists a horizontal nanoporous structure at the interface between the phase-separated layer and the n-GaN layer, presumably resulting from the high transition of electrons between the barrier and the well (InGaN layer) at the interface. As compared to the as-grown MQW structure, the etched MQW structure exhibits a photoluminescence (PL) enhancement with a partial relaxation of compressive stress due to the increased light-extracting surface area and light-guiding effect. Such a compressive stress relaxation can be further confirmed by Raman spectra.

  16. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  17. Etching of photoresist with an atmospheric pressure plasma jet

    NASA Astrophysics Data System (ADS)

    West, Andrew; van der Schans, Marc; Xu, Cigang; Gans, Timo; Cooke, Mike; Wagenaars, Erik

    2014-10-01

    Low-pressure oxygen plasmas are commonly used in semiconductor industry for removing photoresist from the surface of processed wafers; a process known as plasma ashing or plasma stripping. The possible use of atmospheric-pressure plasmas instead of low-pressure ones for plasma ashing is attractive from the point of view of reduction in equipment costs and processing time. We present investigations of photoresist etching with an atmospheric-pressure plasma jet (APPJ) in helium gas with oxygen admixtures driven by radio-frequency power. In these experiments, the neutral, radical rich effluent of the APPJ is used for etching, avoiding direct contact between the active plasma and the sensitive wafer, while maintaining a high etch rate. Photoresist etch rates and etch quality are measured for a range of plasma operating parameters such as power input, driving frequency, flow rate and wafer temperature. Etch rates of up to 10 micron/min were achieved with modest input power (45 W) and gas flow rate (10 slm). Fourier Transform Infrared (FTIR) spectroscopy showed that the quality of the photoresist removal was comparable to traditional plasma ashing techniques. This work was supported by the UK Engineering and Physical Sciences Research Council Grant EP/K018388/1.

  18. Which self-etch bonding systems are suitable for which clinical indications?

    PubMed

    Haller, Bernd

    2013-10-01

    Self-etch bonding systems are promoted as a time-saving and user-friendly alternative to etch-and-rinse bonding systems. Self-etch adhesives are characterized by a relatively mild etching effect, resulting in a relatively low incidence of postoperative hypersensitivity. On the other hand, their mild etching effect causes a reduction in bond strength to enamel compared to that achieved with phosphoric acid etching. All-in-one adhesives still suffer from less-than-optimal initial bond strengths and from inadequate durability of the bond. Future developments need to focus on the elimination of water deposits along the adhesive interface of all-in-one adhesives. While self-etch adhesives may yield acceptable results when applied in combination with light-cured composite resin, their acidic monomers inhibit the polymerization of auto-cured and dual-cured composite resins. Unfortunately, most "self-cure" or "dual-cure" activators do not overcome this problem. This incompatibility has to be taken into consideration when using self-etch adhesives for adhesive cementation and for core build-up restorations. When assessing self-etch bonding systems, it should be noted that they do not represent a homogenous category of materials but rather comprise a great variety of different types of products, each with specific strengths and weaknesses. PMID:23971056

  19. Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops.

    PubMed

    English, Timothy S; Provine, J; Marshall, Ann F; Koh, Ai Leen; Kenny, Thomas W

    2016-07-01

    Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication.

  20. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  1. Experimental study on thermal hazard of tributyl phosphate-nitric acid mixtures using micro calorimeter technique.

    PubMed

    Sun, Qi; Jiang, Lin; Gong, Liang; Sun, Jin-Hua

    2016-08-15

    During PUREX spent nuclear fuel reprocessing, mixture of tributyl phosphate (TBP) and hydrocarbon solvent are employed as organic solvent to extract uranium in consideration of radiation contaminated safety and resource recycling, meanwhile nitric acid is utilized to dissolve the spent fuel into small pieces. However, once TBP contacts with nitric acid or nitrates above 130°C, a heavy "red oil" layer would occur accompanied by thermal runaway reactions, even caused several nuclear safety accident. Considering nitric acid volatility and weak exothermic detection, C80micro calorimeter technique was used in this study to investigate thermal decomposition of TBP mixed with nitric acid. Results show that the concentration of nitric acid greatly influences thermal hazard of the system by direct reactions. Even with a low heating rate, if the concentration of nitric acid increases due to evaporation of water or improper operations, thermal runaway in the closed system could start at a low temperature. PMID:27136728

  2. Bonding with self-etching primers--pumice or pre-etch? An in vitro study.

    PubMed

    Fitzgerald, Ian; Bradley, Gerard T; Bosio, Jose A; Hefti, Arthur F; Berzins, David W

    2012-04-01

    The purpose of this study was to compare the shear bond strengths (SBSs) of orthodontic brackets bonded with self-etching primer (SEP) using different enamel surface preparations. A two-by-two factorial study design was used. Sixty human premolars were harvested, cleaned, and randomly assigned to four groups (n = 15 per group). Teeth were bathed in saliva for 48 hours to form a pellicle. Treatments were assigned as follows: group 1 was pumiced for 10 seconds and pre-etched for 5 seconds with 37 per cent phosphoric acid before bonding with SEP (Transbond Plus). Group 2 was pumiced for 10 seconds before bonding. Group 3 was pre-etched for 5 seconds before bonding. Group 4 had no mechanical or chemical preparation before bonding. All teeth were stored in distilled water for 24 hours at 37°C before debonding. The SBS values and adhesive remnant index (ARI) score were recorded. The SBS values (± 1 SD) for groups 1-4 were 22.9 ± 6.6, 16.1 ± 7.3, 36.2 ± 8.2, and 13.1 ± 10.1 MPa, respectively. Two-way analysis of variance and subsequent contrasts showed statistically significant differences among treatment groups. ARI scores indicated the majority of adhesive remained on the bracket for all four groups. Pre-etching the bonding surface for 5 seconds with 37 per cent phosphoric acid, instead of pumicing, when using SEPs to bond orthodontic brackets, resulted in greater SBSs.

  3. Controlled fabrication of silicon nanowires via nanosphere lithograph and metal assisted chemical etching.

    PubMed

    Sun, Bo; Shi, Tielin; Sheng, Wenjun; Liao, Guanglan

    2013-08-01

    We investigated the controlled fabrication of uniform vertical aligned silicon nanowires with desired length, diameter and location by combining nanosphere lithograph and metal assisted chemical etching techniques. The close-packed polystyrene nanospheres array was obtained by self-assemble technique, followed by reactive ion etching to acquire a non-close-packed monolayer template. Subsequently, the template was used to create a metal film with nanoholes array, which enable the controlled fabrication of ordered silicon nanowires via metal assisted chemical etching technique. By adjusting the monolayer of polystyrene nanospheres and the conditions for the metal assisted chemical etching, we obtained uniform distributed silicon nanowires with desired morphology. The aspect ratio of the silicon nanowires can reach to about 86:1. Furthermore, we have obtained the double-layer silicon nanowires by slight modifying the process. The influences of various conditions during etching were also discussed for improving the controlled fabrication.

  4. Dry etch development of W/WSi short Gate MESFETs

    SciTech Connect

    Shul, R.J.; Sherwin, M.E.; Baca, A.G.; Zolper, J.C.; Rieger, D.J.

    1996-01-01

    The use of refractory metal thin films in the fabrication of high-speed, high-density GaAs field effect transistors (FETs) are prominent with applications as interconnects, via plugs, and ohmic and Schottky contacts. Tungsten and tungsten silicide can be used in a self-aligned gate process as the ion implantation mask during the formation of source and drain regions for metal-semiconductor FETs (MESFETs). The gate etch must be highly anisotropic to accurately define the implant region. Reactive ion etch (RIE) techniques have been used to etch W and WSi films in fluorine-based discharges. The etch mechanism tends to be very chemical and often results in severe undercutting of the feature due to the lateral attack of the refractory metal. The undercut is often so severe that critical dimensions are not maintained and gate profiles do not properly align to the implant region resulting in poor device characteristics. As device design rules shrink, the etch requirements and patterning techniques become even more critical.

  5. Wet Chemical Etching Survey of III-Nitrides

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hays, D.C.; MacKenzie, J.D.; Pearton, S.J.; Ren, F.; Shul, R.J.; Vartuli, C.B.; Zolper, J.C.

    1999-02-04

    Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75 C. Only KOH-based solutions were found to etch AlN and InAlN. No etchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75 C, or HCl/H{sub 2}O at 25 C.

  6. A novel method to inject hyaluronic acid: the Fern Pattern Technique.

    PubMed

    van Eijk, Tom; Braun, Martin

    2007-08-01

    Nonanimal Stabilized Hyaluronic Acid (NASHA) has proven itself as one of the safest, most versatile dermal fillers with a high patient and physician satisfaction. The authors describe a novel technique to inject Restylane (NASHA) in the dermis for optimal correction of dynamic facial lines. Mobile facial folds represent a greater challenge for correction using standard injection techniques. The injection technique described is named the Fern Pattern Technique. The purpose of the Fern Pattern Technique is to use Restylane in such a way that it becomes a skin stiffening agent, rather than a simple filler in order to provide optimal correction for lines that deepen with expressive facial movements. The Fern Pattern Technique also uses less material to provide a correction that is not visible at rest or during dynamic movement for lines that deepen during a smile, as well as the dynamic lower nasolabial fold.

  7. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    NASA Astrophysics Data System (ADS)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  8. Reaction rates of graphite with ozone measured by etch decoration

    NASA Technical Reports Server (NTRS)

    Hennig, G. R.; Montet, G. L.

    1968-01-01

    Etch-decoration technique of detecting vacancies in graphite has been used to determine the reaction rates of graphite with ozone in the directions parallel and perpendicular to the layer planes. It consists essentially of peeling single atom layers off graphite crystals without affecting the remainder of the crystal.

  9. Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

    SciTech Connect

    Kang, Seung Hyun; Kim, Jong Kyu; Lee, Sung Ho; Kim, Jin Woo; Yeom, Geun Young

    2015-03-15

    To reduce the cross-talk between nanoscale devices, low-k materials such as methyl silsesquioxane (MSQ), which is damaged easily during plasma etching, are introduced as an intermetallic dielectric material in addition to the use of copper as the conducting material for the reduction of parasitic resistance and capacitance. In this study, beam techniques such as neutral/ion beams were used in the etching of MSQ and the effect of these beam techniques on the reduction of the degradation of the MSQ were investigated. When MSQ was etched using the same CF{sub 4} etch gas at the similar etch rate as that used for conventional MSQ etching using inductively coupled plasmas (ICPs), the neutral/ion beam etching showed lower F contents and lower penetration depth of F, indicating decreased degradation by fluorination of MSQ during etching using the beam techniques. Especially, the neutral beam etching technique showed the lowest F contamination and the lower penetration depth of F among the etch methods. When the dielectric constant was measured after the etching of the same depth, the MSQ etched with the neutral beam showed the lowest change of the dielectric constant, while that etched using the ICP showed the highest change of dielectric constant. The lower degradation, that is, the lower chemical modification of MSQ material with the beam technique is believed to be related to the decreased concentration of radical species in the processing chamber reacting with the MSQ surface, while the lowest degradation using the neutral beam is believed to be due to the lower reaction rate of the reactive neutral compared to reactive ions.

  10. Synthesis of non-aggregated nicotinic acid coated magnetite nanorods via hydrothermal technique

    NASA Astrophysics Data System (ADS)

    Attallah, Olivia A.; Girgis, E.; Abdel-Mottaleb, Mohamed M. S. A.

    2016-02-01

    Non-aggregated magnetite nanorods with average diameters of 20-30 nm and lengths of up to 350 nm were synthesized via in situ, template free hydrothermal technique. These nanorods capped with different concentrations (1, 1.5, 2 and 2.5 g) of nicotinic acid (vitamin B3); possessed good magnetic properties and easy dispersion in aqueous solutions. Our new synthesis technique maintained the uniform shape of the nanorods even with increasing the coating material concentration. The effect of nicotinic acid on the shape, particle size, chemical structure and magnetic properties of the prepared nanorods was evaluated using different characterization methods. The length of nanorods increased from 270 nm to 350 nm in nicotinic acid coated nanorods. Goethite and magnetite phases with different ratios were the dominant phases in the coated samples while a pure magnetite phase was observed in the uncoated one. Nicotinic acid coated magnetic nanorods showed a significant decrease in saturation magnetization than uncoated samples (55 emu/g) reaching 4 emu/g in 2.5 g nicotinic acid coated sample. The novel synthesis technique proved its potentiality to prepare coated metal oxides with one dimensional nanostructure which can function effectively in different biological applications.

  11. A review of the different techniques for solid surface acid-base characterization.

    PubMed

    Sun, Chenhang; Berg, John C

    2003-09-18

    In this work, various techniques for solid surface acid-base (AB) characterization are reviewed. Different techniques employ different scales to rank acid-base properties. Based on the results from literature and the authors' own investigations for mineral oxides, these scales are compared. The comparison shows that Isoelectric Point (IEP), the most commonly used AB scale, is not a description of the absolute basicity or acidity of a surface, but a description of their relative strength. That is, a high IEP surface shows more basic functionality comparing with its acidic functionality, whereas a low IEP surface shows less basic functionality comparing with its acidic functionality. The choice of technique and scale for AB characterization depends on the specific application. For the cases in which the overall AB property is of interest, IEP (by electrokinetic titration) and H(0,max) (by indicator dye adsorption) are appropriate. For the cases in which the absolute AB property is of interest such as in the study of adhesion, it is more pertinent to use chemical shift (by XPS) and the heat of adsorption of probe gases (by calorimetry or IGC).

  12. TECHNIQUES AND METHODS FOR THE DETERMINATION OF HALOACETIC ACIDS IN POTABLE WATER

    EPA Science Inventory

    Haloethanoic (haloacetic) acids (HAAs) are formed as disinfection byproducts (DBPs) during the chlorination of natural water to make it fit for consumption. Sundry analytical techniques have been applied in order to determine the concentrations of the HAAs in potable water suppli...

  13. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  14. Chemical etching of nitinol stents.

    PubMed

    Katona, Bálint; Bognár, Eszter; Berta, Balázs; Nagy, Péter; Hirschberg, Kristóf

    2013-01-01

    At present the main cause of death originates from cardiovascular diseases. Primarily the most frequent cause is vessel closing thus resulting in tissue damage. The stent can help to avoid this. It expands the narrowed vessel section and allows free blood flow. The good surface quality of stents is important. It also must have adequate mechanical characteristics or else it can be damaged which can easily lead to the fracture of the implant. Thus, we have to consider the importance of the surface treatment of these implants. In our experiments the appropriate design was cut from a 1.041 mm inner diameter and 0.100 mm wall thickness nitinol tube by using Nd:YAG laser device. Then, the stent was subjected to chemical etching. By doing so, the burr created during the laser cutting process can be removed and the surface quality refined. In our research, we changed the time of chemical etching and monitored the effects of this parameter. The differently etched stents were subjected to microscopic analysis, mass measurement and in vivo environment tests. The etching times that gave suitable surface and mechanical features were identified.

  15. Simultaneous determination of iron (II) and ascorbic acid in pharmaceuticas based on flow sandwich technique.

    PubMed

    Vakh, Christina; Freze, Elena; Pochivalov, Alexsey; Evdokimova, Ekaterina; Kamencev, Mihail; Moskvin, Leonid; Bulatov, Andrey

    2015-01-01

    The simple and easy performed flow system based on sandwich technique has been developed for the simultaneous separate determination of iron (II) and ascorbic acid in pharmaceuticals. The implementation of sandwich technique assumed the injection of sample solution between two selective reagents and allowed the carrying out in reaction coil two chemical reactions simultaneously: iron (II) with 1,10-phenanthroline and ascorbic acid with sodium 2,6-dichlorophenolindophenol. For achieving of excellent repeatability and considerable reagent saving the various parameters such as flow rate, sample and reagent volumes, reaction coil length were also optimized. The limits of detection (LODs) obtained by using the developed flow sandwich-type approach were 0.2 mg L(-1) for iron (II) and 0.7 mg L(-1) for ascorbic acid. The suggested approach was validated according to the following parameters: linearity and sensitivity, precision, recoveries and accuracy. The sampling frequency was 41 h(-1). PMID:25862995

  16. In vitro amplification techniques for the detection of nucleic acids: new tools for the diagnostic laboratory.

    PubMed

    Persing, D H; Landry, M L

    1989-01-01

    The acceptance of nucleic acid probes as diagnostic tools for the clinical laboratory has been hampered by a number of factors, including laborious techniques and limited sensitivity. The focus of this review is on the recent development of amplification techniques to enhance the signal generated by nucleic acid-based detection systems. Three general areas are discussed: (1) amplification of target sequences using the polymerase chain reaction or the transcript amplification system, (2) amplification of the probe sequences using Q beta replicase, and (3) amplification of probe-generated signals with compound or "Christmas tree" probes. The hope of these new technologies is to simplify yet improve on the sensitivity of nucleic acid-based tests to enable them to attain a more prominent place in the diagnostic repertoire of the clinical laboratory.

  17. Development and Research on the Mechanism of Novel Mist Etching Method for Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Kawaharamura, Toshiyuki; Hirao, Takashi

    2012-03-01

    A novel etching process with etchant mist was developed and applied to oxide thin films such as zinc oxide (ZnO), zinc magnesium oxide (ZnMgO), and indium tin oxide (ITO). By using this process, it was shown that precise control of the etching characteristics is possible with a reasonable etching rate, for example, in the range of 10-100 nm/min, and a fine pattern of high accuracy can also be realized, even though this is usually very difficult by conventional wet etching processes, for ZnO and ZnMgO. The mist etching process was found to be similarly and successfully applied to ITO. The mechanism of mist etching has been studied by examining the etching temperature dependence of pattern accuracy, and it was shown that the mechanism was different from that of conventional liquid-phase spray etching. It was ascertained that fine pattern etching was attained using mist droplets completely (or partly) gasified by the heat applied to the substrate. This technique was applied to the fabrication of a ZnO thin-film transistor (TFT) with a ZnO active channel length of 4 µm. The electrical properties of the TFT were found to be excellent with fine uniformity over the entire 4-in. wafer.

  18. Fabrication of sub-15 nm aluminum wires by controlled etching

    NASA Astrophysics Data System (ADS)

    Morgan-Wall, T.; Hughes, H. J.; Hartman, N.; McQueen, T. M.; Marković, N.

    2014-04-01

    We describe a method for the fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is simultaneously measured in-situ. The etching process can be stopped when the desired resistance is reached, and can be restarted at a later time. The resulting nanowires show a superconducting transition as a function of temperature and magnetic field that is consistent with their smaller diameter. The width of the transition is similar to that of the lithographically defined wires, indicating that the etching process is uniform and that the wires are undamaged. This technique allows for precise control over the normal state resistance and can be used to create a variety of aluminum nanodevices.

  19. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    SciTech Connect

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-07

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.

  20. Comparing the Titrations of Mixed-Acid Solutions Using Dropwise and Constant-Flow Techniques

    NASA Astrophysics Data System (ADS)

    Charlesworth, Paul; Seguin, Matthew J.; Chesney, David J.

    2003-11-01

    A mixed-acid solution containing hydrochloric and phosphoric acids was used to determine the error associated with performing a real-time titration. The results were compared against those obtained by performing the titration in a more traditional dropwise addition of titrant near the equivalence points. It was found that the real-time techniques resulted in significantly decreased analysis times while maintaining a low experimental error. The constant-flow techniques were implemented into two different levels of chemistry. It was found that students could successfully utilize the modified experiments. Problems associated with the techniques, major sources of error, and their solutions are discussed. In both cases, the use of the constant-flow setup has increased student recollection of key concepts, such as pKa determination, proper indicator choice, and recognizing the shape of specific titration curves by increasing student interest in the experiment.

  1. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  2. Nanoscrews: Asymmetrical Etching of Silver Nanowires.

    PubMed

    Tan, Rachel Lee Siew; Chong, Wen Han; Feng, Yuhua; Song, Xiaohui; Tham, Chu Long; Wei, Jun; Lin, Ming; Chen, Hongyu

    2016-08-31

    World's smallest screws with helical threads are synthesized via mild etching of Ag nanowires. With detailed characterization, we show that this nanostructure arises not from the transformation of the initial lattice, but the result of a unique etching mode. Three-dimensional printed models are used to illustrate the evolution of etch pits, from which a possible mechanism is postulated. PMID:27513181

  3. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  4. Optimization of microwave-induced chemical etching for rapid development of neutron-induced recoil tracks in CR-39 detectors

    NASA Astrophysics Data System (ADS)

    Sahoo, G. S.; Tripathy, S. P.; Bandyopadhyay, T.

    2014-03-01

    A systematic investigation is carried out to optimize the recently established microwave-induced chemical etching (MICE) parameters for rapid development of neutron-induced recoil tracks in CR-39 detectors. Several combinations of all available microwave powers with different etching durations were analysed to determine the most suitable etching condition. The etching duration was found to reduce with increasing microwave power and the tracks were observed at about 18, 15, 12, and 6 min for 300, 450, 600 and 900 W of microwave powers respectively compared to a few hours in chemical etching (CE) method. However, for complete development of tracks the etching duration of 30, 40, 50 and 60 min were found to be suitable for the microwave powers of 900, 600, 450 and 300 W, respectively. Temperature profiles of the etchant for all the available microwave powers at different etching durations were generated to regulate the etching process in a controlled manner. The bulk etch rates at different microwave powers were determined by 2 methods, viz., gravimetric and removed thickness methods. A logarithmic expression was used to fit the variation of bulk etch rate with microwave power. Neutron detection efficiencies were obtained for all the cases and the results on track parameters obtained with MICE technique were compared with those obtained from another detector processed with chemical etching.

  5. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  6. Post-Synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals.

    PubMed

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2015-11-23

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein, we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, by an acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, along these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution.

  7. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  8. Cryogenic electron beam induced chemical etching.

    PubMed

    Martin, Aiden A; Toth, Milos

    2014-11-12

    Cryogenic cooling is used to enable efficient, gas-mediated electron beam induced etching (EBIE) in cases where the etch rate is negligible at room and elevated substrate temperatures. The process is demonstrated using nitrogen trifluoride (NF3) as the etch precursor, and Si, SiO2, SiC, and Si3N4 as the materials volatilized by an electron beam. Cryogenic cooling broadens the range of precursors that can be used for EBIE, and enables high-resolution, deterministic etching of materials that are volatilized spontaneously by conventional etch precursors as demonstrated here by NF3 and XeF2 EBIE of silicon. PMID:25333843

  9. Laser etching of austenitic stainless steels for micro-structural evaluation

    NASA Astrophysics Data System (ADS)

    Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

    2015-06-01

    Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

  10. Enamel resistance to demineralization following Er:YAG laser etching for bonding orthodontic brackets

    PubMed Central

    Ahrari, Farzaneh; Poosti, Maryam; Motahari, Pourya

    2012-01-01

    Background: Several studies have shown that laser-etching of enamel for bonding orthodontic brackets could be an appropriate alternative for acid conditioning, since a potential advantage of laser could or might be caries prevention. This study compared enamel resistance to demineralization following etching with acid phosphoric or Er:YAG laser for bonding orthodontic brackets. Materials and Methods: Fifty sound human premolars were divided into two equal groups. In the first group, enamel was etched with 37% phosphoric acid for 15 seconds. In the second group, Er:YAG laser (wavelength, 2 940 nm; 300 mJ/pulse, 10 pulses per second, 10 seconds) was used for tooth conditioning. The teeth were subjected to 4-day PH-cycling process to induce caries-like lesions. The teeth were then sectioned and the surface area of the lesion was calculated in each microphotographs and expressed in pixel. The total surface of each specimen was 196 608 pixels. Results: Mean lesion areas were 7 171 and 7532 pixels for Laser-etched and Acid-etched groups, respectively. The two sample t-test showed that there was no significant difference in lesion area between the two groups (P = 0.914). Conclusion: Although Er:YAG laser seems promising for etching enamel before bonding orthodontic brackets, it does not reduce enamel demineralization when exposed to acid challenge. PMID:23162591

  11. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  12. Investigation of Nalidixic Acid Resistance Mechanism in Salmonella enterica Using Molecular Simulation Techniques.

    PubMed

    Preethi, B; Shanthi, V; Ramanathan, K

    2015-09-01

    The emergence of nalidixic acid-resistant strains of Salmonella typhimurium remains to be a major public health problem. In particular, the substitution of Asn in place of Asp at the 87 loci in the GyrA of S. typhimurium was experimentally stated for nalidixic acid resistance. However, the data on the possible mechanism of nalidixic acid resistance are limited. In this study, I-Mutant2.0 and DUET program were employed to explore the impact of mutation on the stability of GyrA protein. Subsequently, molecular simulation techniques were employed to provide detailed information on the nalidixic acid-resistant associates with the D87N mutation in the GyrA of S. typhimurium. The binding free energy data depicts that nalidixic acid forms stable complex only with native-type GyrA than mutant (D87N) type GyrA protein. Moreover, our results theoretically suggest that hydrogen bonding formed by the Arg91 is certainly responsible for the GyrA of S. typhimurium drug selectivity. It is hoped that these evidences are immensely important for the development of new antibiotic and to overcome the nalidixic acid resistance in the near future. PMID:26208690

  13. Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

    SciTech Connect

    Schmidt, Torsten; Zhang, Miao; Linnros, Jan; Yu, Shun

    2014-09-22

    We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find the limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.

  14. Plasmoids for etching and deposition

    NASA Astrophysics Data System (ADS)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  15. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    NASA Technical Reports Server (NTRS)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  16. Cryo-Etched Black Silicon for Use as Optical Black

    NASA Technical Reports Server (NTRS)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  17. An esthetic restorative technique for use during the stabilization period after vertical root extrusion.

    PubMed

    Hartwell, G R; Cecic, P A

    1983-07-01

    A case report illustrates an esthetic temporary restorative technique for use during the stabilization period after vertical root extrusion. A polycarbonate crown was adapted to the stabilized root and anchor system with acid-etch composite resin material. This restoration withstood a five-month stabilization period and provided both function and a good esthetic appearance.

  18. Surface-enhanced Raman scattering (SERS) spectroscopy technique for lactic acid in serum measurement

    NASA Astrophysics Data System (ADS)

    Chiang, Hui Hua Kenny; Hsu, Po Hsiang

    2005-08-01

    Highly sensitive measurement of biomolecules is very important in clinical diagnosis and biomedical sensing. Spectroscopic methods have played important roles in biomedical sensing system developments. Recent development in surface enhanced Raman scattering (SERS) method has greatly enhanced the weak Raman signals of biomolecules and has provided great potentials for real time measurement of biomolecules of body fluid. In addition, Raman measurement has the advantage of not requiring extrinsic fluorescent marker for labeling purpose. In this study, we have pioneered in the development of SERS spectroscopic measurement technique for serum lactic acid, which is one of the most important metabolic parameter in blood. We have fabricated Ag colloidal nanoparticles to enhance the weak Raman signal of lactic acid in serum. The diameter of the Ag nanoparticle is 20 nm, the nanoparticles concentration is 109particles/ml. We have observed the SERS characteristic peak of lactic acid at 1285~1480cm-1 under 632.8 nm HeNe laser excitation. We have demonstrated the measurement of the lactic acid in filtered serum in the physiological concentration range 5x10-3~22x10-3 mole/L, which is hundred times lower than the detectible range using traditional Raman approach. The serum samples with were measured in a specially designed reflector type sample holder to form a multiple reflection of excitation laser through the sample, between a reflector and a notch filter. In conclusion, this research demonstrates the feasibility of using Ag SERS technique for measuring the lactic acid at physical concentration and establishes the platform technique for human body fluid measurements.

  19. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. PMID:26918838

  20. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process.

  1. Study of nucleic acid-ligand interactions by capillary electrophoretic techniques: A review.

    PubMed

    Neaga, I O; Bodoki, E; Hambye, S; Blankert, B; Oprean, R

    2016-01-01

    The understanding of nucleic acids-ligand (proteins, nucleic acids or various xenobiotics) interactions is of fundamental value, representing the basis of complex mechanisms that govern life. The development of improved therapeutic strategies, as well as the much expected breakthroughs in case of currently untreatable diseases often relies on the elucidation of such biomolecular interactions. Capillary electrophoresis (CE) is becoming an indispensable analytical tool in this field of study due to its high versatility, ease of method development, high separation efficiency, but most importantly due to its low sample and buffer volume requirements. Most often the availability of the compounds of interest is severely limited either by the complexity of the purification procedures or by the cost of their synthesis. Several reviews covering the investigation of protein-protein and protein-xenobiotics interactions by CE have been published in the recent literature; however none of them promotes the use of these techniques in the study of nucleic acid interactions. Therefore, various CE techniques applicable for such interaction studies are discussed in detail in the present review. The paper points out the particular features of these techniques with respect the estimation of the binding parameters, in analytical signal acquisition and data processing, as well as their current shortcomings and limitations.

  2. Immunochemical Assays and Nucleic-Acid Detection Techniques for Clinical Diagnosis of Prostate Cancer

    PubMed Central

    Kanyong, Prosper; Rawlinson, Sean; Davis, James

    2016-01-01

    Prostate cancer (PCa) is a significant cause of morbidity and mortality and the most common cancer in men in Europe, North America, and some parts of Africa. The established methods for detecting PCa are normally based on tests using Prostate Specific Antigen (PSA) in blood, Prostate cancer antigen 3 (PCA3) in urine and tissue Alpha-methylacyl-CoA racemase (AMACR) as tumour markers in patient samples. Prior to the introduction of PSA in clinics, prostatic acid phosphatase (PAP) was the most widely used biomarker. An early diagnosis of PCa through the detection of these biomarkers requires the availability of simple, reliable, cost-effective and robust techniques. Immunoassays and nucleic acid detection techniques have experienced unprecedented growth in recent years and seem to be the most promising analytical tools. This growth has been driven in part by the surge in demand for near-patient-testing systems in clinical diagnosis. This article reviews immunochemical assays, and nucleic-acid detection techniques that have been used to clinically diagnose PCa. PMID:26958088

  3. Relevance of nucleic acid amplification techniques for diagnosis of respiratory tract infections in the clinical laboratory.

    PubMed Central

    Ieven, M; Goossens, H

    1997-01-01

    Clinical laboratories are increasingly receiving requests to perform nucleic acid amplification tests for the detection of a wide variety of infectious agents. In this paper, the efficiency of nucleic acid amplification techniques for the diagnosis of respiratory tract infections is reviewed. In general, these techniques should be applied only for the detection of microorganisms for which available diagnostic techniques are markedly insensitive or nonexistent or when turnaround times for existing tests (e.g., viral culture) are much longer than those expected with amplification. This is the case for rhinoviruses, coronaviruses, and hantaviruses causing a pulmonary syndrome, Bordetella pertussis, Chlamydia pneumoniae, Mycoplasma pneumoniae, and Coxiella burnetii. For Legionella spp. and fungi, contamination originating from the environment is a limiting factor in interpretation of results, as is the difficulty in differentiating colonization and infection. Detection of these agents in urine or blood by amplification techniques remains to be evaluated. In the clinical setting, there is no need for molecular diagnostic tests for the diagnosis of Pneumocystis carinii. At present, amplification methods for Mycobacterium tuberculosis cannot replace the classical diagnostic techniques, due to their lack of sensitivity and the absence of specific internal controls for the detection of inhibitors of the reaction. Also, the results of interlaboratory comparisons are unsatisfactory. Furthermore, isolates are needed for susceptibility studies. Additional work remains to be done on sample preparation methods, comparison between different amplification methods, and analysis of results. The techniques can be useful for the rapid identification of M. tuberculosis in particular circumstances, as well as the rapid detection of most rifampin-resistant isolates. The introduction of diagnostic amplification techniques into a clinical laboratory implies a level of proficiency for

  4. Electron beam directed etching of hexagonal boron nitride.

    PubMed

    Elbadawi, Christopher; Tran, Trong Toan; Kolíbal, Miroslav; Šikola, Tomáš; Scott, John; Cai, Qiran; Li, Lu Hua; Taniguchi, Takashi; Watanabe, Kenji; Toth, Milos; Aharonovich, Igor; Lobo, Charlene

    2016-09-28

    Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices. PMID:27603125

  5. Study on the impact of silicon doping level on the trench profile using metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Cao, Zhe; Huang, Qiyu; Zhao, Chuanrui; Zhang, Qing

    2016-10-01

    Metal-assisted chemical etching (MACE) has been used as a promising alternative method to fabricate micro/nano-structures on silicon substrates inexpensively. In this paper, profiles of deep trenches on silicon substrates, with different doping levels, fabricated by MACE were studied. A layer of interconnected gold islands was first deposited onto the silicon substrate as catalyst. Electrochemical etching was then performed in a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture solution with different HF-to-H2O2 ratio ρ (ρ = [HF]/([HF] + [H2O2])). Vertical deep trenches were fabricated successfully by using this method. It was observed that even under identical experimental condition, sidewalls with various tilting angles and different morphology could still form on silicon substrates with different resistivity. This possibly because with different resistivity silicon substrate, the gradient of holes in it greatly changed, and so did the final morphology. As a result, the tilting angle of etched trench sidewall can be tuned from 6° to 96° using silicon substrates with different resistivity and etchants with different ρ. By applying the angle-tuning technique revealed in this study, high aspect ratio patterns with vertical sidewalls could be fabricated and three-dimensional complex structures could be designed and realized in the future. [Figure not available: see fulltext.

  6. Metal Oleate Induced Etching and Growth of Semiconductor Nanocrystals, Nanorods, and Their Heterostructures.

    PubMed

    Oh, Nuri; Shim, Moonsub

    2016-08-24

    Unexpected etching of nanocrystals, nanorods, and their heterostructures by one of the most commonly used metal precursors, metal oleates, is reported. Zn oleate is shown to etch CdS nanorods anisotropically, where the length decreases without a significant change in the diameter. Sodium oleate enhances the etch rate, whereas oleic acid alone does not cause etching, indicating the importance of the countercation on the rate of oleate induced etching. Subsequent addition of Se precursors to the partially etched nanorods in Zn oleate solution can lead to epitaxial growth of CdSe particles rather than the expected ZnSe growth, despite an excess amount of Zn precursors being present. The composition of this epitaxial growth can be varied from CdSe to ZnSe, depending on the amount of excess oleic acid or the reaction temperature. Similar tuning of composition can be observed when starting with collinear CdSe/CdS/CdSe rod/rod/rod heterostructures and spherical CdS (or CdSe/CdS core/shell) nanocrystals. Conversion of collinear rod/rod/rod structures to barbells and interesting rod growth from nearly spherical particles among other structures can also result due to the initial etching effect of metal oleates. These observations have important implications on our understanding of nanocrystal heterostructure synthesis and open up new routes to varying the composition and morphology of these materials. PMID:27485673

  7. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  8. Effect of enamel etching time on roughness and bond strength.

    PubMed

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra) and composite to enamel shear bond strengths (SBS) were determined following the treatment of flat ground human enamel (4000 grit) with five adhesive systems: (1) Adper Single Bond Plus (SBP), (2) Adper Prompt L-Pop (PLP), (3) Clearfil SE Bond (CSE), (4) Clearfil S3 Bond (CS3) and (5) Xeno IV (X4), using recommended treatment times and an extended treatment time of 60 seconds (n = 10/group). Control groups were also included for Ra (4000 grit surface) and SBS (no enamel treatment and Adper Scotchbond Multi-Purpose Adhesive). For surface roughness measurements, the phosphoric acid conditioner of the SBP etch-and-rinse system was rinsed from the surface with an air-water spray, and the other four self-etch adhesive agents were removed with alternating rinses of water and acetone. A Proscan 2000 non-contact profilometer was used to determine Ra values. Composite (Z100) to enamel bond strengths (24 hours) were determined using Ultradent fixtures and they were debonded with a crosshead speed of 1 mm/minute. The data were analyzed with ANOVA and Fisher's LSD post-hoc test. The etch-and- rinse system (SBP) produced the highest Ra (microm) and SBS (MPa) using both the recommended treatment time (0.352 +/- 0.028 microm and 40.5 +/- 6.1 MPa) and the extended treatment time (0.733 +/- 0.122 microm and 44.2 +/- 8.2 MPa). The Ra and SBS of the etch-and-rinse system were significantly greater (p < 0.05) than all the self-etch systems and controls. Increasing the treatment time with phosphoric acid (SBP) and PLP produced greater surface roughness (p < 0.05) but did not result in significantly higher bond strengths (p > 0.05). PMID:19363978

  9. Hydrochloric acid/pumice microabrasion technique for the removal of enamel pigmentation.

    PubMed

    Kilpatrick, N M; Welbury, R R

    1993-04-01

    Products for lightening teeth are appearing on the market with ever-increasing frequency. Heavy advertising, coupled with heightened public awareness and expectations of an aesthetically pleasing smile, have resulted in increased patient demand for treatment to improve all types of tooth discoloration. Although it is the role of the dental profession to provide the services demanded by the consumer, it is also our duty to be discerning and to re-assess continually the techniques we use, for both efficacy and safety. To do this, long-term follow up of clinical techniques is essential. This paper contains the clinical results of teeth treated over 4.5 years using the hydrochloric acid/pumice microabrasion technique to remove enamel opacities and pigmentation. The subject under discussion is that of enamel discoloration: intrinsic staining with its origins in dentine, such as that caused by the ingestion of tetracycline antibiotics during odontogenesis, is not amenable to this form of surface treatment.

  10. A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok; Wild, Larry

    2003-01-01

    Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

  11. Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

    NASA Astrophysics Data System (ADS)

    Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

    2015-03-01

    Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

  12. Fabrication of IR-transparent microfluidic devices by anisotropic etching of channels in CaF2.

    PubMed

    Lehmkuhl, Brynson; Noblitt, Scott D; Krummel, Amber T; Henry, Charles S

    2015-11-21

    A simple fabrication method for generating infrared (IR) transparent microfluidic devices using etched CaF2 is demonstrated. To etch microfluidic channels, a poly(dimethylsiloxane) (PDMS) microfluidic device was reversibly sealed on a CaF2 plate and acid was pumped through the channel network to perform anisotropic etching of the underlying CaF2 surface. To complete the CaF2 microfluidic device, another CaF2 plate was sealed over the etched channel using a 700 nm thick layer of PDMS adhesive. The impact of different acids and their concentrations on etching was studied, with HNO3 giving the best results in terms of channel roughness and etch rates. Etch rate was determined at etching times ranging from 4-48 hours and showed a linear correlation with etching time. The IR transparency of the CaF2 device was established using a Fourier Transform IR microscope and showed that the device could be used in the mid-IR region. Finally, utility of the device was demonstrated by following the reaction of N-methylacetamide and D2O, which results in an amide peak shift to 1625 cm(-1) from 1650 cm(-1), using an FTIR microscope. PMID:26450455

  13. Method for etching thin films of niboium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, R.T.; Schuller, I.K.; Falco, C.M.

    1979-11-23

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds is provided in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid, and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  14. Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits

    DOEpatents

    Kampwirth, Robert T.; Schuller, Ivan K.; Falco, Charles M.

    1981-01-01

    An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

  15. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  16. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  17. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  18. Etching of glass microchips with supercritical water.

    PubMed

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  19. Evaluation of shear bond strength of orthodontic brackets bonded with Er-YAG laser etching

    PubMed Central

    Raji, S. Hamid; Birang, Reza; Majdzade, Fateme; Ghorbanipour, Reza

    2012-01-01

    Background: Based on contradictory findings concerning the use of lasers for enamel etching, the purpose of this study was to investigate the shear bond strength of teeth prepared for bonding with Er-YAG laser etching and compare them with phosphoric acid etching. Materials and Methods: In this in vitro study forty – eight premolars, extracted for orthodontic purposes were randomly divided in to three groups. Thirty-two teeth were exposed to laser energy for 25 s: 16 teeth at 100 mj setting and 16 teeth at 150 mj setting. Sixteen teeth were etched with 37% phosphoric acid. The shear bond strength of bonded brackets with the Transbond XT adhesive system was measured with the Zwick testing machine. Descriptive statistics, Kolmogorov–Smirnov test, of homogeneity of variances, one- way analysis of variances and Tukey's test and Kruskal Wallis were used to analyze the data. Results: The mean shear bond strength of the teeth lased with 150 mj was 12.26 ± 4.76 MPa, which was not significantly different from the group with acid etching (15.26 ± 4.16 MPa). Irradiation with 100 mj resulted in mean bond strengths of 9.05 ± 3.16 MPa, which was significantly different from that of acid etching (P < 0.001). Conclusions: laser etching at 150 and 100 mj was adequate for bond strength but the failure pattern of brackets bonded with laser etching is dominantly at adhesive – enamel interface and is not safe for enamel during debonding. PMID:23087733

  20. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  1. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  2. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

    NASA Astrophysics Data System (ADS)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  3. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    PubMed

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-01-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts. PMID:26634813

  4. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    PubMed

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-04

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  5. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

    PubMed Central

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-01-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts. PMID:26634813

  6. Temperature effects on sealed lead acid batteries and charging techniques to prolong cycle life.

    SciTech Connect

    Hutchinson, Ronda

    2004-06-01

    Sealed lead acid cells are used in many projects in Sandia National Laboratories Department 2660 Telemetry and Instrumentation systems. The importance of these cells in battery packs for powering electronics to remotely conduct tests is significant. Since many tests are carried out in flight or launched, temperature is a major factor. It is also important that the battery packs are properly charged so that the test is completed before the pack cannot supply sufficient power. Department 2665 conducted research and studies to determine the effects of temperature on cycle time as well as charging techniques to maximize cycle life and cycle times on sealed lead acid cells. The studies proved that both temperature and charging techniques are very important for battery life to support successful field testing and expensive flight and launched tests. This report demonstrates the effects of temperature on cycle time for SLA cells as well as proper charging techniques to get the most life and cycle time out of SLA cells in battery packs.

  7. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  8. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  9. Surface cleaning and etching of rare-earth-doped phosphate glass

    NASA Astrophysics Data System (ADS)

    Barnes, Amy S.; Pantano, Carlo G.; Conzone, Samuel D.

    2001-11-01

    The surface reactions of phosphate glasses are important for the processing and application of photonic devices, biomedical materials and conventional optical components. Of particular concern are the leaching of optically-active dopant species, surface layer formation and roughening during polishing, cleaning and other fabrication processes. In this study, the effects of various cleaning treatments, and both acid and base etching, were evaluated using surface analytical techniques (XPS, AFM). It is shown that in these phosphate glasses, the aluminum and rare-earth oxides have limited aqueous solubility, whereas the phosphate network is soluble over a wider range of pH. Thus, under those conditions where polishing damage can be removed by etching the surface, a localized precipitation of rare-earth oxides occurs which influences the final roughness and surface composition. Conversely, under conditions where this precipitation can be eliminated, an in-depth leaching of the surface occurs. These aqueous surface reactions were similar for both the optically-active and passive IOG-1 glasses. An optimized surface preparation method is described.

  10. Aspects of native oxides etching on n-GaSb(1 0 0) surface

    NASA Astrophysics Data System (ADS)

    Cotirlan, C.; Ghita, R. V.; Negrila, C. C.; Logofatu, C.; Frumosu, F.; Lungu, G. A.

    2016-02-01

    Gallium antimonide (GaSb) is the basis of the most photovoltaic and thermophotovoltaic (TPV) systems and its innovative technological aspects based on modern ultra-high vacuum techniques are in trend for device achievement. The real surface of GaSb is modified by technological processes that can conduce to problems related to the reproducible control of its surface properties. The GaSb surface is reactive in atmosphere due to oxygen presence and exhibits a native oxide layer. The evolution of native oxides during the ion sputtering, chemical etching and thermal annealing processes for preparing the surface is presented in detailed way. Ratios of surface constituents are obtained by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Moreover, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM) and Low-Energy Electron Diffraction (LEED) are used for characterization. The surface stoichiometry is changed using a specific etchant (e.g. citric acid) at different etching time and is analyzed by ARXPS, SEM, EDS and AFM methods. The experimental results provide useful information regarding surface native oxides characteristics on n-GaSb(1 0 0) to be taken into account for development of low resistance contacts for TPV devices based on GaSb alloy.

  11. A blanching technique for intradermal injection of the hyaluronic acid Belotero.

    PubMed

    Micheels, Patrick; Sarazin, Didier; Besse, Stéphanie; Sundaram, Hema; Flynn, Timothy C

    2013-10-01

    With the proliferation of dermal fillers in the aesthetic workplace have come instructions from various manufacturers regarding dermal placement. Determination of injection needle location in the dermis has in large part been based on physician expertise, product and needle familiarity, and patient-specific skin characteristics. An understanding of the precise depth of dermal structures may help practitioners improve injection specificity. Unlike other dermal fillers that suggest intradermal and deep dermal injection planes, a new hyaluronic acid with a cohesive polydensified matrix may be more appropriate for the superficial dermis because of its structure and its high degree of integration into the dermis. To that end, the authors designed a small study to quantify the depth of the superficial dermis by means of ultrasound and histology. Using ultrasound resources, the authors determined the depths of the epidermis, the dermis, and the reticular dermis in the buttocks of six patients; the authors then extrapolated the depth of the superficial reticular dermis. Histologic studies of two of the patients showed full integration of the product in the reticular dermis. Following determination of injection depths and filler integration, the authors describe a technique ("blanching") for injection of the cohesive polydensified matrix hyaluronic acid into the superficial dermis. At this time, blanching is appropriate only for injection of the cohesive polydensified matrix hyaluronic acid known as Belotero Balance in the United States, although it may have applications for other hyaluronic acid products outside of the United States.

  12. Continuous flow ink etching for direct micropattern of silicon dioxide

    NASA Astrophysics Data System (ADS)

    Xing, Jiyao; Rong, Weibin; Wang, Lefeng; Sun, Lining

    2016-07-01

    A continuous flow ink etching (CFIE) method is presented to directly create micropatterns on a 60 nm thick silicon dioxide (SiO2) layer. This technique employs a micropipette filled with potassium bifluoride (KHF2) aqueous solution to localize SiO2 dissolution in the vicinity of the micropipette tip. Both dot and line features with well-defined edges were fabricated and used as hardmasks for silicon etching. The linear density of etchant ink deposited on the SiO2 can be used to regulate the depth, width and 2D morphology of the line pattern. The characterization of CFIE including the resolution (about 4 μm), reproducibility and capability to form complex structures are reported. This technique provides a simple and flexible alternative to generate the SiO2 hardmask for silicon microstructure fabrication.

  13. Highly efficient metal-free growth of nitrogen-doped single-walled carbon nanotubes on plasma-etched substrates for oxygen reduction.

    PubMed

    Yu, Dingshan; Zhang, Qiang; Dai, Liming

    2010-11-01

    We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.

  14. AFM and SEM study of the effects of etching on IPS-Empress 2 TM dental ceramic

    NASA Astrophysics Data System (ADS)

    Luo, X.-P.; Silikas, N.; Allaf, M.; Wilson, N. H. F.; Watts, D. C.

    2001-10-01

    The aim of this study was to investigate the effects of increasing etching time on the surface of the new dental material, IPS-Empress 2 TM glass ceramic. Twenty one IPS-Empress 2 TM glass ceramic samples were made from IPS-Empress 2 TM ingots through lost-wax, hot-pressed ceramic fabrication technology. All samples were highly polished and cleaned ultrasonically for 5 min in acetone before and after etching with 9.6% hydrofluoric acid gel. The etching times were 0, 10, 20, 30, 60, 90 and 120 s respectively. Microstructure was analysed by scanning electron microscopy (SEM) and atomic force microscopy (AFM) was used to evaluate the surface roughness and topography. Observations with SEM showed that etching with hydrofluoric acid resulted in preferential dissolution of glass matrix, and that partially supported crystals within the glass matrix were lost with increasing etching time. AFM measurements indicated that etching increased the surface roughness of the glass-ceramic. A simple least-squares linear regression was used to establish a relationship between surface roughness parameters ( Ra, RMS), and etching time, for which r2>0.94. This study demonstrates the benefits of combining two microscopic methods for a better understanding of the surface. SEM showed the mode of action of hydrofluoric acid on the ceramic and AFM provided valuable data regarding the extent of surface degradation relative to etching time.

  15. A denuder technique for the measurement of nitrous acid in urban atmospheres

    NASA Astrophysics Data System (ADS)

    Febo, A.; Perrino, C.; Cortiello, M.

    A new denuder set-up for the measurement of nitrous acid in polluted atmospheres is described here. The set-up is composed of one tetrachloromercurate-coated denuder for the removal of SO 2 and two downstream sodium carbonate-coated denuders for the determination of nitrous acid by the differential technique [Febo et al., 19, 1517-1530 1990]. The removal of SO 2 is necessary in order to avoid the formation of artifact nitrite on the sulfite layer which results from the interaction between atmospheric SO 2 and the Na 2CO 3 coating. Because of this mechanism, the measurement of HONO by means of the previously used NaClNa 2CO 3Na 2CO 3 denuder set-up is heavily biased in all cases when SO 2 and NO 2 are present at high concentration levels (e.g. urban environments).

  16. Effect of temperature on acid-base equilibria in separation techniques. A review.

    PubMed

    Gagliardi, Leonardo G; Tascon, Marcos; Castells, Cecilia B

    2015-08-19

    Studies on the theoretical principles of acid-base equilibria are reviewed and the influence of temperature on secondary chemical equilibria within the context of separation techniques, in water and also in aqueous-organic solvent mixtures, is discussed. In order to define the relationships between the retention in liquid chromatography or the migration velocity in capillary electrophoresis and temperature, the main properties of acid-base equilibria have to be taken into account for both, the analytes and the conjugate pairs chosen to control the solution pH. The focus of this review is based on liquid-liquid extraction (LLE), liquid chromatography (LC) and capillary electrophoresis (CE), with emphasis on the use of temperature as a useful variable to modify selectivity on a predictable basis. Simplified models were evaluated to achieve practical optimizations involving pH and temperature (in LLE and CE) as well as solvent composition in reversed-phase LC.

  17. Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

    SciTech Connect

    Mehran, M.; Mohajerzadeh, S.; Sanaee, Z.; Abdi, Y.

    2010-05-17

    Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.

  18. Etch challenges for DSA implementation in CMOS via patterning

    NASA Astrophysics Data System (ADS)

    Pimenta Barros, P.; Barnola, S.; Gharbi, A.; Argoud, M.; Servin, I.; Tiron, R.; Chevalier, X.; Navarro, C.; Nicolet, C.; Lapeyre, C.; Monget, C.; Martinez, E.

    2014-03-01

    This paper reports on the etch challenges to overcome for the implementation of PS-b-PMMA block copolymer's Directed Self-Assembly (DSA) in CMOS via patterning level. Our process is based on a graphoepitaxy approach, employing an industrial PS-b-PMMA block copolymer (BCP) from Arkema with a cylindrical morphology. The process consists in the following steps: a) DSA of block copolymers inside guiding patterns, b) PMMA removal, c) brush layer opening and finally d) PS pattern transfer into typical MEOL or BEOL stacks. All results presented here have been performed on the DSA Leti's 300mm pilot line. The first etch challenge to overcome for BCP transfer involves in removing all PMMA selectively to PS block. In our process baseline, an acetic acid treatment is carried out to develop PMMA domains. However, this wet development has shown some limitations in terms of resists compatibility and will not be appropriated for lamellar BCPs. That is why we also investigate the possibility to remove PMMA by only dry etching. In this work the potential of a dry PMMA removal by using CO based chemistries is shown and compared to wet development. The advantages and limitations of each approach are reported. The second crucial step is the etching of brush layer (PS-r-PMMA) through a PS mask. We have optimized this step in order to preserve the PS patterns in terms of CD, holes features and film thickness. Several integrations flow with complex stacks are explored for contact shrinking by DSA. A study of CD uniformity has been addressed to evaluate the capabilities of DSA approach after graphoepitaxy and after etching.

  19. Improved Experimental Techniques for Analyzing Nucleic Acid Transport Through Protein Nanopores in Planar Lipid Bilayers

    NASA Astrophysics Data System (ADS)

    Costa, Justin A.

    The translocation of nucleic acid polymers across cell membranes is a fundamental requirement for complex life and has greatly contributed to genomic molecular evolution. The diversity of pathways that have evolved to transport DNA and RNA across membranes include protein receptors, active and passive transporters, endocytic and pinocytic processes, and various types of nucleic acid conducting channels known as nanopores. We have developed a series of experimental techniques, collectively known as "Wicking", that greatly improves the biophysical analysis of nucleic acid transport through protein nanopores in planar lipid bilayers. We have verified the Wicking method using numerous types of classical ion channels including the well-studied chloride selective channel, CLIC1. We used the Wicking technique to reconstitute α-hemolysin and found that DNA translocation events of types A and B could be routinely observed using this method. Furthermore, measurable differences were observed in the duration of blockade events as DNA length and composition was varied, consistent with previous reports. Finally, we tested the ability of the Wicking technology to reconstitute the dsRNA transporter Sid-1. Exposure to dsRNAs of increasing length and complexity showed measurable differences in the current transitions suggesting that the charge carrier was dsRNA. However, the translocation events occurred so infrequently that a meaningful electrophysiological analysis was not possible. Alterations in the lipid composition of the bilayer had a minor effect on the frequency of translocation events but not to such a degree as to permit rigorous statistical analysis. We conclude that in many instances the Wicking method is a significant improvement to the lipid bilayer technique, but is not an optimal method for analyzing transport through Sid-1. Further refinements to the Wicking method might have future applications in high throughput DNA sequencing, DNA computation, and

  20. Versatile route to gapless microlens arrays using laser-tunable wet-etched curved surfaces.

    PubMed

    Hao, Bian; Liu, Hewei; Chen, Feng; Yang, Qing; Qu, Pubo; Du, Guangqing; Si, Jinhai; Wang, Xianhua; Hou, Xun

    2012-06-01

    This work reveals a cost-efficient and flexible approach to various microlens arrays on polymers, which is essential to micro-optics elements. An 800-nm femtosecond laser is employed to control the hydrofluoric (HF) acid etching process on silica glasses, and concave microstructures with smooth curved surfaces are produced by this method. Then, the micro-structured glass templates can serve as molds for replicating microlenses on polymers. In this paper, a high-ordered microlens array with over 16,000 hexagonal-shaped lenses is fabricated on poly (dimethyl siloxane) [PDMS], and its perfect light-gathering ability and imaging performance are demonstrated. The flexibility of this method is demonstrated by successful preparation of several concave molds with different patterns which are difficult to be obtained by other methods. This technique provides a new route to small-scaled, smooth and curved surfaces which is widely used in micro-optics, biochemical analysis and superhydrophobic interface. PMID:22714321

  1. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process.

    PubMed

    Bian, Hao; Yang, Qing; Chen, Feng; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations.

  2. One-year clinical evaluation of the bonding effectiveness of a one-step, self-etch adhesive in noncarious cervical lesion therapy.

    PubMed

    Faye, Babacar; Sarr, Mouhamed; Bane, Khaly; Aidara, Adjaratou Wakha; Niang, Seydina Ousmane; Kane, Abdoul Wakhabe

    2015-01-01

    This study evaluated the one-year clinical performance of a one-step, self-etch adhesive (Optibond All-in-One, Kerr, CA, USA) combined with a composite (Herculite XRV Ultra, Kerr Hawe, CA, USA) to restore NCCLs with or without prior acid etching. Restorations performed by the same practitioner were evaluated at baseline and after 3, 6, and 12 months using modified USPHS criteria. At 6 months, the recall rate was 100%. The retention rate was 84.2% for restorations with prior acid etching, but statistically significant differences were observed between baseline and 6 months. Without acid etching, the retention rate was 77%, and no statistically significant difference was noted between 3 and 6 months. Marginal integrity (93.7% with and 87.7% without acid etching) and discoloration (95.3% with and 92.9% without acid etching) were scored as Alpha or Bravo, with better results after acid etching. After one year, the recall rate was 58.06%. Loss of pulp vitality, postoperative sensitivity, or secondary caries were not observed. After one year retention rate was of 90.6% and 76.9% with and without acid conditioning. Optibond All-in-One performs at a satisfactory clinical performance level for restoration of NCCLs after 12 months especially after acid etching. PMID:25810720

  3. One-Year Clinical Evaluation of the Bonding Effectiveness of a One-Step, Self-Etch Adhesive in Noncarious Cervical Lesion Therapy

    PubMed Central

    Faye, Babacar; Sarr, Mouhamed; Bane, Khaly; Aidara, Adjaratou Wakha; Niang, Seydina Ousmane; Kane, Abdoul Wakhabe

    2015-01-01

    This study evaluated the one-year clinical performance of a one-step, self-etch adhesive (Optibond All-in-One, Kerr, CA, USA) combined with a composite (Herculite XRV Ultra, Kerr Hawe, CA, USA) to restore NCCLs with or without prior acid etching. Restorations performed by the same practitioner were evaluated at baseline and after 3, 6, and 12 months using modified USPHS criteria. At 6 months, the recall rate was 100%. The retention rate was 84.2% for restorations with prior acid etching, but statistically significant differences were observed between baseline and 6 months. Without acid etching, the retention rate was 77%, and no statistically significant difference was noted between 3 and 6 months. Marginal integrity (93.7% with and 87.7% without acid etching) and discoloration (95.3% with and 92.9% without acid etching) were scored as Alpha or Bravo, with better results after acid etching. After one year, the recall rate was 58.06%. Loss of pulp vitality, postoperative sensitivity, or secondary caries were not observed. After one year retention rate was of 90.6% and 76.9% with and without acid conditioning. Optibond All-in-One performs at a satisfactory clinical performance level for restoration of NCCLs after 12 months especially after acid etching. PMID:25810720

  4. Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Kang, Seung Hyun; Yeom, Geun Young

    2013-11-15

    Silicon atomic layer etching (ALET) using Cl{sub 2} is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional damage removal method, such as the low-power CF{sub 4} plasma treatment technique, ALET produces less secondary damage to the substrate and gives exact etch depth control and extremely high etch selectivity to the contact SiO{sub 2} insulating pattern mold. When ALET is applied after a conventional damage removal technique, the sheet resistance of the damaged contact silicon surface is improved to a level close to that of a clean silicon surface, while exact atomic-scale depth control is maintained without changes in the pattern mold profile.

  5. Effect of etchant concentration on microwave induced chemical etching (MICE) of CR-39 detector

    NASA Astrophysics Data System (ADS)

    Sahoo, G. S.; Tripathy, S. P.; Sharma, S. D.; Bandyopadhyay, T.

    2015-11-01

    The recently introduced microwave induced chemical etching (MICE) has been found to be a fast and effective etching technique for CR-39 detector. In the present work, the MICE technique was used to develop the neutron induced recoil tracks in CR-39 detectors. Special attention was paid in carrying out a systematic investigation to study the effect of etchant concentration and microwave power on the development of tracks and various track parameters. NaOH solution of different concentrations, viz. 3-8 N was tested at 300, 450, 600 and 900 W of microwave power. Temperature profiles for 200 ml solution of each concentration were generated to maintain a fixed operating condition for all concentrations at each microwave power. The bulk etch rate was found to increase with the microwave power as well as with the etchant concentration. Empirical relations were established to relate the variation of bulk etch rate with microwave power and etchant concentration.

  6. Current techniques in acid-chloride corrosion control and monitoring at The Geysers

    SciTech Connect

    Hirtz, Paul; Buck, Cliff; Kunzman, Russell

    1991-01-01

    Acid chloride corrosion of geothermal well casings, production piping and power plant equipment has resulted in costly corrosion damage, frequent curtailments of power plants and the permanent shut-in of wells in certain areas of The Geysers. Techniques have been developed to mitigate these corrosion problems, allowing continued production of steam from high chloride wells with minimal impact on production and power generation facilities.The optimization of water and caustic steam scrubbing, steam/liquid separation and process fluid chemistry has led to effective and reliable corrosion mitigation systems currently in routine use at The Geysers. When properly operated, these systems can yield steam purities equal to or greater than those encountered in areas of The Geysers where chloride corrosion is not a problem. Developments in corrosion monitoring techniques, steam sampling and analytical methodologies for trace impurities, and computer modeling of the fluid chemistry has been instrumental in the success of this technology.

  7. Ultradeep fused silica glass etching with an HF-resistant photosensitive resist for optical imaging applications

    NASA Astrophysics Data System (ADS)

    Nagarah, John M.; Wagenaar, Daniel A.

    2012-03-01

    Microfluidic and optical sensing platforms are commonly fabricated in glass and fused silica (quartz) because of their optical transparency and chemical inertness. Hydrofluoric acid (HF) solutions are the etching media of choice for deep etching into silicon dioxide substrates, but processing schemes become complicated and expensive for etching times greater than 1 h due to the aggressiveness of HF migration through most masking materials. We present here etching into fused silica more than 600 µm deep while keeping the substrate free of pits and maintaining a polished etched surface suitable for biological imaging. We utilize an HF-resistant photosensitive resist (HFPR) which is not attacked in 49% HF solution. Etching characteristics are compared for substrates masked with the HFPR alone and the HFPR patterned on top of Cr/Au and polysilicon masks. We used this etching process to fabricate suspended fused silica membranes, 8-16 µm thick, and show that imaging through the membranes does not negatively affect image quality of fluorescence microscopy of biological tissue. Finally, we realize small through-pore arrays in the suspended membranes. Such devices will have applications in planar electrophysiology platforms, especially where optical imaging is required.

  8. Etching with electron beam generated plasmas

    SciTech Connect

    Leonhardt, D.; Walton, S.G.; Muratore, C.; Fernsler, R.F.; Meger, R.A.

    2004-11-01

    A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride ({approx}200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride (SiO{sub x}F{sub y}) compounds. At low incident ion energies, the Ar-SF{sub 6} mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at {approx}75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.

  9. Simulation of Etching Profiles Using Level Sets

    NASA Technical Reports Server (NTRS)

    Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    1998-01-01

    Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

  10. Note: electrochemical etching of sharp iridium tips.

    PubMed

    Lalanne, Jean-Benoît; Paul, William; Oliver, David; Grütter, Peter H

    2011-11-01

    We describe an etching procedure for the production of sharp iridium tips with apex radii of 15-70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success rate.

  11. Analysis methods for meso- and macroporous silicon etching baths

    NASA Astrophysics Data System (ADS)

    Nehmann, Julia B.; Kajari-Schröder, Sarah; Bahnemann, Detlef W.

    2012-07-01

    Analysis methods for electrochemical etching baths consisting of various concentrations of hydrofluoric acid (HF) and an additional organic surface wetting agent are presented. These electrolytes are used for the formation of meso- and macroporous silicon. Monitoring the etching bath composition requires at least one method each for the determination of the HF concentration and the organic content of the bath. However, it is a precondition that the analysis equipment withstands the aggressive HF. Titration and a fluoride ion-selective electrode are used for the determination of the HF and a cuvette test method for the analysis of the organic content, respectively. The most suitable analysis method is identified depending on the components in the electrolyte with the focus on capability of resistance against the aggressive HF.

  12. Determination of nucleic acids with a near infrared cyanine dye using resonance light scattering technique

    NASA Astrophysics Data System (ADS)

    Fang, Fang; Zheng, Hong; Li, Ling; Wu, Yuqin; Chen, Jinlong; Zhuo, Shujuan; Zhu, Changqing

    2006-06-01

    A new method for the determination of nucleic acids has been developed based on the enhancement effect of resonance light scattering (RLS) with a cationic near infrared (NIR) cyanine dye. Under the optimal conditions, the enhanced RLS intensity at 823 nm is proportional to the concentration of nucleic acids in the range of 0-400 ng mL -1 for both calf thymus DNA (CT DNA) and fish sperm DNA (FS DNA), 0-600 ng mL -1 for snake ovum RNA (SO RNA). The detection limits are 3.5 ng mL -1, 3.4 ng mL -1 and 2.9 ng mL -1 for CT DNA, FS DNA and SO RNA, respectively. Owing to performing in near infrared region, this method not only has high sensitivity endowed by RLS technique but also avoids possible spectral interference from background. It has been applied to the determination of nucleic acids in synthetic and real samples and satisfactory results were obtained.

  13. Structural investigation of frozen-hydrated Omp C specimens prepared by the fatty acid monolayer technique

    SciTech Connect

    Chang, C.F.; Glaeser, R.M.

    1983-01-01

    Omp C (M.W. approx.36,000) is one of the major proteins in the outer membrane of E. coli. Trimeric Omp C forms a pore allowing small hydrophilic molecules to diffuse across the membrane. Specimens studied are prepared by reconstituting purified Omp C trimers with lipid A (the core structure of the outer membrane lipopolysaccharide). These specimens form 2-D periodic arrays with a size of approx.0.5 ..mu..m on edge. Initial structural investigations on negatively stained Omp C specimens have been reported by Grano et al. A preliminary structural analysis of frozen-hydrated Omp C is presented, using specimens prepared by a modification of the stearic-acid monolayer technique of Hayward et al. Stearate monolayers can successfully squeeze out the bulk water on the surface of the EM grid only at relatively high concentrations of Ca/sup + +/ and high pH. In the current study, the authors replaced the stearic acid with behenic acid, CH/sub 3/(CH/sub 2/)/sub 20/COOH, which can adhere to a suitably prepared EM grid from a subphase of distilled water.

  14. Acid demineralization susceptibility of dental enamel submitted to different bleaching techniques and fluoridation regimens.

    PubMed

    Salomão, Dlf; Santos, Dm; Nogueira, Rd; Palma-Dibb, Rg; Geraldo-Martins, Vr

    2014-01-01

    The aim of the current study was to assess the acid demineralization susceptibility of bleached dental enamel submitted to different fluoride regimens. One hundred bovine enamel blocks (6×6×3 mm) were randomly divided into 10 groups (n=10). Groups 1 and 2 received no bleaching. Groups 3 to 6 were submitted to an at-home bleaching technique using 6% hydrogen peroxide (HP; G3 and G4) or 10% carbamide peroxide (CP; G5 and G6). Groups 7 to 10 were submitted to an in-office bleaching technique using 35% HP (G7 and G8) or 35% CP (G9 and G10). During bleaching, a daily fluoridation regimen of 0.05% sodium fluoride (NaF) solution was performed on groups 3, 5, 7, and 9, while weekly fluoridation with a 2% NaF gel was performed on groups 4, 6, 8, and 10. The samples in groups 2 to 10 were pH cycled for 14 consecutive days. The samples from all groups were then assessed by cross-sectional Knoop microhardness at different depths from the outer enamel surface. The average Knoop hardness numbers (KHNs) were compared using one-way analysis of variance and Tukey tests (α=0.05). The comparison between groups 1 and 2 showed that the demineralization method was effective. The comparison among groups 2 to 6 showed the same susceptibility to acid demineralization, regardless of the fluoridation method used. However, the samples from groups 8 and 10 showed more susceptibility to acid demineralization when compared with group 2 (p<0.05). Groups 7 and 9 provided similar results to group 2, but the results of those groups were different when compared with groups 8 and 10. The use of 6% HP and 10% CP associated with daily or weekly fluoridation regimens did not increase the susceptibility of enamel to acid demineralization. However, the use of 35% HP and 35% CP must be associated with a daily fluoridation regimen, otherwise the in-office bleaching makes the bleached enamel more susceptible to acid demineralization.

  15. Surface engineering on CeO2 nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation

    NASA Astrophysics Data System (ADS)

    Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

    2015-07-01

    Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications.Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce3+ fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications. Electronic supplementary information (ESI) available: Diameter distributions of as-prepared and etched samples, optical images, specific catalytic data of CO oxidation and comparison of CO oxidation. See DOI: 10.1039/c5nr01846c

  16. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  17. Aspect ratio dependent etching lag reduction in deep silicon etch processes

    SciTech Connect

    Lai, S.L.; Johnson, D.; Westerman, R.

    2006-07-15

    Microelectromechanical system (MEMS) device fabrication often involves three dimensional structures with high aspect ratios. Moreover, MEMS designs require structures with different dimensions and aspect ratios to coexist on a single microchip. There is a well-documented aspect ratio dependent etching (ARDE) effect in deep silicon etching processes. For features with different dimensions etched simultaneously, the ARDE effect causes bigger features to be etched at faster rates. In practice, ARDE effect has many undesired complications to MEMS device fabrication. This article presents a physical model to describe the time division multiplex (TDM) plasma etch processes and thereafter the experimental results on ARDE lag reduction. The model breaks individual plasma etch cycles in the TDM plasma etch processes into polymer deposition, polymer removal, and spontaneous silicon etching stages. With the insights gained from the model and control over the passivation and etch steps, it has been demonstrated that ARDE lag can be controlled effectively. Experiments have shown that a normal ARDE lag can be changed to an inverse ARDE lag. Under optimized conditions, the ARDE lag is reduced to below 2%-3% for trenches with widths ranging from 2.5 to 100 {mu}m, while maintaining good etch profile in trenches with different dimensions. Such results are achieved at etch rates exceeding 2 {mu}m/min.

  18. Charging effect simulation model used in simulations of plasma etching of silicon

    SciTech Connect

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Rangelow, Ivo W.; Cooke, Mike

    2012-10-15

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)-a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured-as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  19. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  20. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  1. Strongly reduced Si surface recombination by charge injection during etching in diluted HF/HNO3.

    PubMed

    Greil, Stefanie M; Schöpke, Andreas; Rappich, Jörg

    2012-08-27

    Herein, we investigate the behaviour of the surface recombination of light-induced charge carriers during the etching of Si in alkaline (KOH) and acidic etching solutions of HF/HNO(3)/CH(3)COOH (HNA) or HF/HNO(3)/H(3)PO(4) (HNP) at different concentration ratios of HF and HNO(3) by means of photoluminescence (PL) measurements. The surface recombination velocity is strongly reduced during the first stages of etching in HF/HNO(3)-containing solutions pointing to a interface well passivated by the etching process, where a positive surface charge is induced by hole injection from NO-related surface species into the Si near-surface region (back surface field effect). This injected charge leads to a change in band bending by about 150 mV that repulses the light-induced charge carriers from the surface and therefore enhances the photoluminescence intensity, since non-radiative surface recombination is reduced.

  2. Optical and electrical diagnostics of fluorocarbon plasma etching processes

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul

    1999-05-01

    This article reviews recent work concerning the role of CF and CF2 radicals in etching and polymerization processes occurring in capacitively coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers in microelectronic device fabrication. Laser-induced fluorescence (LIF) was used to determine time-resolved axial concentration profiles of these species in continuous and pulse-modulated CF4 and C2F6 plasmas. Calibration techniques, including broad-band UV absorption spectroscopy, were developed to put the LIF measurements on an absolute scale. A novel technique was used to determine the ion flux to the reactor walls in these polymerizing environments. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer. It was found that CFx radicals are produced predominantly by the reflection of neutralized and dissociated CFx+ ions at the powered electrode surface. When the fluorine atom concentration is high, the CFx radicals are destroyed effectively by recombination catalysed by the reactor walls. When the fluorine atom concentration is lowered, the CF2 concentration rises markedly, and it participates in gas-phase oligomerization processes, forming large CxFy molecules and, after ionization, large CxFy+ ions. These species appear to be the true polymer precursors. This mechanism explains the well known correlation between high CF2 concentrations, polymer deposition and SiO2 over Si etch selectivity.

  3. Random and Uniform Reactive Ion Etching Texturing of Si

    SciTech Connect

    Zaidi, S.H.

    1999-04-01

    The performance of a solar cell is critically dependent on absorption of incident photons and their conversion into electrical current. This report describes research efforts that have been directed toward the use of nanoscale surface texturing techniques to enhance light absorption in Si. This effort has been divided into two approaches. The first is to use plasma-etching to produce random texturization on multicrystalline Si cells for terrestrial use, since multicrystalline Si cannot be economically textured in any other way. The second approach is to use interference lithography and plasma-etching to produce gettering structures on Si cells for use in space, so that long-wavelength light can be absorbed close to the junction and make the cells more resistant to cosmic radiation damage.

  4. Plasma etching in a multipolar discharge

    NASA Astrophysics Data System (ADS)

    Wicker, T. E.; Mantei, T. D.

    1985-03-01

    Etching of silicon and SiO2 has been investigated in a dc plasma discharge confined by a multipolar surface magnetic field layer. The reactive plasma is produced by primary ionizing electrons drawn from heated tungsten filaments and confined by permanent magnets. Electrical probe measurements show that a uniform high-density plasma (1010-1011 cm-3) is sustained in SF6-O2 at very low pressure (0.2-2.0×10-3 Torr). Substrates are biased independently of plasma production by a low-frequency alternating voltage (0-400 V) applied to the substrate through a blocking capacitor. Anisotropic profiles are etched into Si in SF6-20% O2 with etch rates in excess of 1 μm/min at 2×10-3 Torr. The etch rate increases with increasing primary electron current (up to 3 A) and energy (up to 60 eV), gas pressure (up to 2.0×10-3 Torr), substrate bias voltage, and the addition of up to 20% O2. For higher ionizing electron energies (>60 eV) and higher gas pressure (>2.0×10-3 Torr), etching is partially blocked by residue formation. The etch anisotropy depends mainly on substrate bias, increasing for higher values of bias voltage. The Si:SiO2 etch selectivity is typically 10-20, becoming large with decreasing substrate bias and plasma ion density.

  5. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  6. Etch Characteristics of GaN using Inductively Coupled Cl{sub 2} Plasma Etching

    SciTech Connect

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-20

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl{sub 2}/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl{sub 2}/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 A/min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  7. Fountain pen nanochemistry: Atomic force control of chrome etching

    NASA Astrophysics Data System (ADS)

    Lewis, Aaron; Kheifetz, Yuri; Shambrodt, Efim; Radko, Anna; Khatchatryan, Edward; Sukenik, Chaim

    1999-10-01

    In this report we demonstrate a general method for affecting chemical reactions with a high degree of spatial control that has potentially wide applicability in science and technology. Our technique is based on complexing the delivery of liquid or gaseous materials through a cantilevered micropipette with an atomic force microscope that is totally integrated into a conventional optical microscope. Controlled etching of chrome is demonstrated without detectable effects on the underlying glass substrate. This simple combination allows for the nanometric spatial control of the whole world of chemical reactions in defined regions of surfaces. Applications of the technique in critical areas such as mask repair are likely.

  8. Low-voltage electroosmotic pumps fabricated from track-etched polymer membranes.

    PubMed

    Wang, Ceming; Wang, Lin; Zhu, Xiaorui; Wang, Yugang; Xue, Jianming

    2012-05-01

    Track-etched polymer membranes are used to realize low-voltage electroosmotic (EO) pumps. The nanopores in polycarbonate (PC) and polyethylene terephthalate (PET) membranes were fabricated by the track-etching technique, the pore diameter was controlled in the range of 100 to 250 nm by adjusting the etching time. The results show that these EO pumps can provide high flow rates at low applied voltages (2-5 V). The maximum normalized flow rate is as high as 0.12 ml min(-1) V(-1) cm(-2), which is comparable to the best values of previously demonstrated EO pumps. We attribute this high performance to the unique properties of the track-etched nanopores in the membranes. PMID:22441654

  9. A photoluminescence study of plasma reactive ion etching-induced damage in GaN

    NASA Astrophysics Data System (ADS)

    Mouffak, Z.; Bensaoula, A.; Trombetta, L.

    2014-11-01

    GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D—A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D—A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D—A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.

  10. Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch

    DOEpatents

    Morales, Alfredo M.; Gonzales, Marcela

    2004-06-15

    The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

  11. Effects of Acidity and Stress on Stomach Motility, Assessed by Biomagnetic Technique: Preliminary Results

    NASA Astrophysics Data System (ADS)

    Córdova-Fraga, T.; Sosa-Aquino, M.; Huerta-Franco, R.; Vargas-Luna, M.; Gutiérrez-Juárez, G.; Bernal-Alvarado, J.

    2004-09-01

    The human stomach is a J shaped hollowed organ that undergoes a variable luminal volume without significant pressure changes. This organ has two valves: the cardiac localized in the upper part, and the pillory on the lower part of the organ respectively. The main functions of these valves are to storage, carry, triturate and empty the lumen content. However, their activity could be affected for different agents such as chemical stimulus (alcoholic beverages) and psychological stress. In this contribution we show by the first time, the importance of biomagnetic signal technique in order to measure the human stomach peristaltic frequency in healthy subjects who were evaluated in basal conditions, and after to be submitted at the effects of: acidity caused by alcoholic beverages and psychological stress.

  12. Improved lead recovery and sulphate removal from used lead acid battery through electrokinetic technique.

    PubMed

    Soundarrajan, C; Sivasankar, A; Maruthamuthu, S; Veluchamy, A

    2012-05-30

    This paper presents improvement in lead (Pb) recovery and sulphate removal from used Pb acid battery (ULAB) through Electrokinetic technique, a process aimed to eliminate environmental pollution that arises due to emission of gases and metal particles from the existing high temperature pyrometallurgical process. Two different cell configurations, (1) one with Nafion membrane placed between anode and middle compartments and Agar membrane between cathode and middle compartments and (2) another with only Agar membrane placed between both sides of the middle compartments were designed for the Pb and sulphate separation from ULAB. This paper concludes that the cell with only Agar membranes performed better than the cell with Nafion and Agar membranes in combinations and also explains the mechanism underlying the chemical and electrochemical processes in the cell.

  13. A radioisotopic technique for analysis of free fatty acid reesterification in human adipose tissue.

    PubMed

    Leibel, R L; Hirsch, J

    1985-01-01

    Reesterification rates of free fatty acids (FFA) formed by intracellular triglyceride hydrolysis in small fragments of human adipose tissue were measured. Subcutaneous gluteal adipose tissue, obtained by needle biopsy, was incubated in a buffered albumin medium containing [3H]palmitate and [14C]glucose, each of high specific activity. In triglycerides (TG) and diglycerides (DG) synthesized by the tissue, [14C]glucose is incorporated exclusively into the glyceride-glycerol moiety, and 3H appears solely in the esterified fatty acids. Since rates of TG and DG synthesis can be determined from 14C accumulation rates in these molecules, the total amounts of FFA esterified can also be calculated. The difference between this estimate of total FFA esterification and the moles of [3H]palmitate esterified to these molecules represents the amount of unlabeled FFA from ongoing TG hydrolysis that was reesterified during the incubation. FFA recycling by the reesterification pathway is an important mechanism for the control of the quantity and proportions of FFA and glycerol leaving the human adipocyte. Fasting and beta-adrenergic stimulation reduce the fraction of endogenously released FFA that are reesterified from resting values of 30-40% to 8-21%, thereby increasing the molar ratio of FFA to glycerol leaving the adipocyte. The technique described can be employed to monitor sequential changes in this important metabolic cycle in humans under a wide range of nutritional and clinical circumstances.

  14. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  15. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  16. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  17. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  18. Surface engineering on CeO₂ nanorods by chemical redox etching and their enhanced catalytic activity for CO oxidation.

    PubMed

    Gao, Wei; Zhang, Zhiyun; Li, Jing; Ma, Yuanyuan; Qu, Yongquan

    2015-07-21

    Controllable surface properties of nanocerias are desired for various catalytic processes. There is a lack of efficient approaches to adjust the surface properties of ceria to date. Herein, a redox chemical etching method was developed to controllably engineer the surface properties of ceria nanorods. Ascorbic acid and hydrogen peroxide were used to perform the redox chemical etching process, resulting in a rough surface and/or pores on the surface of ceria nanorods. Increasing the etching cycles induced a steady increase of the specific surface area, oxygen vacancies and surface Ce(3+) fractions. As a result, the etched nanorods delivered enhanced catalytic activity for CO oxidation, compared to the non-etched ceria nanorods. Our method provides a novel and facile approach to continuously adjust the surface properties of ceria for practical applications.

  19. Selective emitter using a screen printed etch barrier in crystalline silicon solar cell.

    PubMed

    Song, Kyuwan; Kim, Bonggi; Lee, Hoongjoo; Lee, Youn-Jung; Park, Cheolmin; Balaji, Nagarajan; Ju, Minkyu; Choi, Jaewoo; Yi, Junsin

    2012-07-23

    The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO3 (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 1021 cm-3 in the low sheet resistance (Rs) region and 7 × 1019 cm-3 in the high Rs region. Solar cells of 12.5 × 12.5 cm2 in dimensions with a wet etch back selective emitter Jsc of 37 mAcm-2, open circuit voltage (Voc) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on Voc compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with Jsc of 36.90 mAcm-2, Voc of 625.7 mV, and efficiency of 17.60%.

  20. Selective emitter using a screen printed etch barrier in crystalline silicon solar cell

    PubMed Central

    2012-01-01

    The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO3 (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 1021 cm−3 in the low sheet resistance (Rs) region and 7 × 1019 cm−3 in the high Rs region. Solar cells of 12.5 × 12.5 cm2 in dimensions with a wet etch back selective emitter Jsc of 37 mAcm−2, open circuit voltage (Voc) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on Voc compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with Jsc of 36.90 mAcm−2, Voc of 625.7 mV, and efficiency of 17.60%. PMID:22823978

  1. Rat adipose tissue amino acid metabolism in vivo as assessed by microdialysis and arteriovenous techniques.

    PubMed

    Kowalski, T J; Wu, G; Watford, M

    1997-09-01

    In fed, anesthetized rats, microdialysis demonstrated a net release of glycerol, glutamine, serine, tyrosine, and taurine and a net uptake of glutamate, aspartate, glycine, and arginine across the inguinal adipose depot. However, the results also indicated excessive proteolysis associated with implantation of the microdialysis probe, and a novel arteriovenous difference technique was developed. Arteriovenous difference across the inguinal fat pat demonstrated a net uptake of glucose and a net release of lactate and glycerol. Starvation (48 h) resulted in higher rates of glycerol and lactate release with lower rates of glucose uptake. A net uptake of triacylglycerol was seen in starved-refed animals. Net glutamine, tyrosine, and taurine release was seen in fed and starved animals, but in starved-refed animals taurine and serine were the only amino acids showing significant release. No significant net uptake or release of ammonia, pyruvate, or alanine was observed. These experiments confirm that adipose tissue is a site of glutamine synthesis and suggest that the principal substrates are derived from intracellular proteolysis. The results also demonstrate the viability of an arteriovenous difference technique for the study of adipose tissue in the rat.

  2. Pattern inspection of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2015-07-01

    Patterned mask inspection for an etched multilayer (ML) EUV mask was investigated. In order to optimize the mask structure from the standpoint of not only a pattern inspection by using a projection electron microscope (PEM), but also by considering the other fabrication processes using electron beam (EB) techniques such as CD metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients (SEECs) of the candidate materials for conductive layer, we evaluated the image contrast and the influence of charging effect. In the cases of 40-pair-ML, 16 nm sized extrusion and intrusion defects were found to be detectable more than 10 sigma in hp 44 nm, 40 nm, and 32 nm line and space (L/S) patterns. Reducing 40-pair-ML to 20-pair-ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16 nm sized defects remained detectable. A double layer structure with 2.5-nm-thik B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  3. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    SciTech Connect

    Hansen, T. A. R.; Weber, J. W.; Colsters, P. G. J.; Mestrom, D. M. H. G.; Sanden, M. C. M. van de; Engeln, R.

    2012-07-01

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  4. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  5. Characterization of the microbial acid mine drainage microbial community using culturing and direct sequencing techniques.

    PubMed

    Auld, Ryan R; Myre, Maxine; Mykytczuk, Nadia C S; Leduc, Leo G; Merritt, Thomas J S

    2013-05-01

    We characterized the bacterial community from an AMD tailings pond using both classical culturing and modern direct sequencing techniques and compared the two methods. Acid mine drainage (AMD) is produced by the environmental and microbial oxidation of minerals dissolved from mining waste. Surprisingly, we know little about the microbial communities associated with AMD, despite the fundamental ecological roles of these organisms and large-scale economic impact of these waste sites. AMD microbial communities have classically been characterized by laboratory culturing-based techniques and more recently by direct sequencing of marker gene sequences, primarily the 16S rRNA gene. In our comparison of the techniques, we find that their results are complementary, overall indicating very similar community structure with similar dominant species, but with each method identifying some species that were missed by the other. We were able to culture the majority of species that our direct sequencing results indicated were present, primarily species within the Acidithiobacillus and Acidiphilium genera, although estimates of relative species abundance were only obtained from direct sequencing. Interestingly, our culture-based methods recovered four species that had been overlooked from our sequencing results because of the rarity of the marker gene sequences, likely members of the rare biosphere. Further, direct sequencing indicated that a single genus, completely missed in our culture-based study, Legionella, was a dominant member of the microbial community. Our results suggest that while either method does a reasonable job of identifying the dominant members of the AMD microbial community, together the methods combine to give a more complete picture of the true diversity of this environment. PMID:23485423

  6. The effectiveness of a modified hydrochloric acid-quartz-pumice abrasion technique on fluorosis stains: a case report.

    PubMed

    Erdogan, G

    1998-02-01

    Endemic dental fluorosis is a form of enamel hypoplasia characterized by moderate-to-severe staining of the tooth surface. Since 1916, numerous investigators have used hydrochloric acid alone on fluorosis stains. More recently, 18% hydrochloric acid-pumice microabrasion has been used to achieve color modification. The main disadvantage of this procedure is the high concentration and low viscosity of hydrochloric acid, which can cause damage to oral and dental tissues. To eliminate this problem, quartz particles can be mixed with the hydrochloric acid. The quartz particles prevent the hydrochloric acid from flowing uncontrollablely by altering it to a gel-like form. A modified 18% hydrochloric acid-quartz-pumice abrasion technique was used to remove fluorine stains from vital teeth in a teenager.

  7. Dry etch fabrication of ultra-thin porous silicon membranes

    NASA Astrophysics Data System (ADS)

    Hajj-Hassan, Mohamad; Cheung, Maurice; Chodavarapu, Vamsy

    2010-06-01

    Porous silicon is a well-known material with interesting properties for a wide variety of applications in electronics, photonics, medicine, and informatics. We demonstrate fabrication of porous silicon using a dry etching technique. We demonstrate free standing porous silicon membranes that are only few microns thick. Free standing porous silicon membranes have the ability to behave as a size-selective permeable membrane by allowing specific sized molecules to pass through while retaining others. Here, we employ the XeF2 to develop few micrometers thick suspended porous silicon membranes. The flexibility of XeF2 etching process allows the production of mechanically stable membranes of different thicknesses. By choosing the appropriate etching parameters and conditions, pore size can be tuned to produce porous silicon with optically attractive features and desired optical behaviors. The pore size, porosity and thickness of the various developed ultra-thin free-standing porous silicon membranes were characterized with scanning electron microscopy and optical transmittance measurements. The fabricated free-standing porous membrane has a typical transmission spectrum of regular silicon modulated by Fabry-Perot fringes. Porous silicon thin membranes that combine the properties of a mechanically and chemically stable high surface area matrix with the function of an optical transducer may find many used in biomedical microdevices.

  8. Optimization of chemical etching process in niobium cavities

    SciTech Connect

    Tajima, T.; Trabia, M.; Culbreth, W.; Subramanian, S.

    2004-01-01

    Superconducting niobium cavities are important components of linear accelerators. Buffered chemical polishing (BCP) on the inner surface of the cavity is a standard procedure to improve its performance. The quality of BCP, however, has not been optimized well in terms of the uniformity of surface smoothness. A finite element computational fluid dynamics (CFD) model was developed to simulate the chemical etching process inside the cavity. The analysis confirmed the observation of other researchers that the iris section of the cavity received more etching than the equator regions due to higher flow rate. The baffle, which directs flow towards the walls of the cavity, was redesigned using optimization techniques. The redesigned baffle significantly improves the performance of the etching process. To verify these results an experimental setup for flow visualization was created. The setup consists of a high speed, high resolution CCD camera. The camera is positioned by a computer-controlled traversing mechanism. A dye injecting arrangement is used for tracking the fluid path. Experimental results are in general agreement with CFD and optimization results.

  9. Overview of atomic layer etching in the semiconductor industry

    SciTech Connect

    Kanarik, Keren J. Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A.

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  10. Pattern inspection of etched multilayer extreme ultraviolet mask

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2016-04-01

    Patterned mask inspection for an etched multilayer (ML) extreme ultraviolet mask was investigated. In order to optimize the mask structure from the standpoint of a pattern inspection the mask structure not only from the standpoint of a pattern inspection by using a projection electron microscope but also by using a projection electron microscope but also by considering the other fabrication processes using electron beam techniques such as critical dimension metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients of the candidate materials for the conductive layer, we evaluated the image contrast and the influence of the charging effect. In the cases of 40-pair ML, 16-nm-sized extrusion and intrusion defects were found to be detectable more than 10 sigma in half pitch 44, 40, and 32 nm line-and-space patterns. Reducing 40-pair ML to 20-pair ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16-nm-sized defects and etching residues remained detectable. The 16-nm-sized defects were also detected after the etched part was refilled with Si. A double-layer structure with 2.5-nm-thick B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  11. Symphony and cacophony in ion track etching: how to control etching results

    NASA Astrophysics Data System (ADS)

    Fink, D.; Kiv, A.; Cruz, S. A.; Muñoz H., G.; Vacík, J.

    2012-07-01

    In general, etching of two identical ion-irradiated polymer foils in the same vessel with the same etchant for the same times does not lead to identical track shapes in both foils. In contrast, the track shapes, the etching speeds, and consequently also the etchant consumption of the two foils diverge increasingly with increasing etching times, unless this is prevented by forceful external equilibration of the system. This tendency toward divergence of a system of multiple ion tracks originates from its lack of self-synchronization during etching. A theory has been developed for this case that also shows general applicability to other diverging effects in human life.

  12. Method for anisotropic etching in the manufacture of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

  13. Method for anisotropic etching in the manufacture of semiconductor devices

    DOEpatents

    Koontz, Steven L.; Cross, Jon B.

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

  14. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  15. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  16. Integrated adsorptive technique for efficient recovery of m-cresol and m-toluidine from actual acidic and salty wastewater.

    PubMed

    Chen, Da; Liu, Fuqiang; Zong, Lidan; Sun, Xiaowen; Zhang, Xiaopeng; Zhu, Changqing; Tao, Xuewen; Li, Aimin

    2016-07-15

    An integrated adsorptive technique combining an m-cresol adsorption unit, an acid retardation unit and an m-toluidine adsorption unit in sequence was designed to recover m-cresol and m-toluidine from highly acidic and salty m-cresol manufacturing wastewater. In the first column packed with hypercrosslinked polymeric resin (NDA-99), most m-cresol was captured through π-π and hydrogen-bonding interactions as well as the salting-out effect, while m-toluidine was not absorbed due to protonation. To separate acid from salt, an acid retardation unit was introduced successively to adsorb sulfuric acid by strong base anion exchange resin (201×7). After the acid retardation unit and mild neutralization reaction, the last column filled with NDA-99 was applied to trap neutral m-toluidine from the salty effluent. Moreover, the eluent of the acid retardation unit was utilized as the regenerant to recover m-toluidine, and the recycled high-acidity and low-salinity solution of m-toluidine was directly used to produce m-cresol as the raw material. Therefore, the proposed method not only efficiently recycled m-cresol and m-toluidine, but also reduced the consumption of alkali dramatically (saving 0.1628t/t wastewater). These findings will inspire design of integrated adsorptive techniques for treating complex organic wastewater with high efficiency and low cost. PMID:27037473

  17. Correlation between grain orientation and the shade of color etching

    SciTech Connect

    Szabo, Peter J.; Kardos, I.

    2010-08-15

    Color etching is an extremely effective metallographic technique not only for making grains well visible, but also for making them distinguishable for automated image analyzers. During color etching, a thin film is formed on the surface of the specimen. The thickness of this layer is in the order of magnitude of the visible light and since both the metal-film boundary and the film surface reflect light, an interference occurs. A wavelength-component of the white line is eliminated and its complementary color will be seen on the surface. As the thickness changes, the colors also change grain by grain. The thickness of the film is dependent on several factors, mostly on the type of the phase. However, different color shades can be observed on the surfaces of single phase materials, which phenomenon is caused by the different crystallographic orientations of the grains. This paper shows a combined color etching electron backscatter diffraction (EBSD) investigation of cast iron. An area of the surface of a gray cast iron specimen was etched. Colors were characterized by their luminescence and their red, green and blue intensity. An EBSD orientation map was taken from the same area and the orientations of the individual grains were determined. Results showed that a strong correlation was found between the luminescence and the R, G, B intensity of the color and the angle between the specimen normal and the < 100> direction, while such correlation was not observed between the color parameters and the < 110 > and < 111> directions, respectively. This indicates that film thickness is sensitive to the < 100> direction of the crystal.

  18. Investigations of Wafer Scale Etching with Xenon Difluoride

    NASA Astrophysics Data System (ADS)

    Chen, K. N.; Hoivik, N.; Lin, C. Y.; Young, A.; Ieong, M.; Shahidi, G.

    2006-03-01

    A good and uniform bulk silicon wafer etching method can be applied to the wafer thinning process in MEMS and 3D applications. In this study, the use of a Xenon Difluoride (XeF2) gas-phase etching system, operating at room temperature, has been investigated for bulk silicon wafer thinning. We investigated the Si-wafer surface morphology and profile following each XeF2 etching process cycle. Theoretical results are used to compare with the experimental results as well. A clean wafer surface by proper surface treatments is significant to achieve a uniform surface profile and morphology for XeF2 etching. A proper design of etching cycle with nitrogen ambient during etching is necessary to achieve the fastest and uniform silicon etching rate. The silicon etching rate is reported as a function of etching pressure, nitrogen pressure, and etching duration.

  19. Shear bond strength of resin to acid/pumice-microabraded enamel.

    PubMed

    Royer, M A; Meiers, J C

    1995-01-01

    The effect of enamel microabrasion techniques consisting of either 18% hydrochloric acid in pumice or a commercially available abrasive/10% hydrochloric acid mixture, PREMA, on composite/enamel shear bond strengths was investigated. Sixty extracted third molars had the bonding surface flattened and were divided into six treatment groups (n=10) with the enamel treated prior to bonding as follows: Group 1-- untreated; Group 2--37% phosphoric acid etched for 30 seconds; Group 3--18% hydrochloric acid/pumice mixture applied for five 20-second treatments; Group 4--similar to Group 3 with additional 37% phosphoric acid etch; Group 5--treated with PREMA compound applied for five 20-second treatments; Group 6--similar to Group 5 treatment with additional 37% phosphoric acid. Herculite XR composite resin was then bonded to all samples using a VLC unit. Samples were tested in shear, and fractured enamel surfaces were evaluated using light microscopy to determine the enamel-to-resin failures. Resin bond strengths to microabraded and H3PO4-etched enamel were similar to bond strengths of untreated H3PO4-etched enamel and were significantly better than bond strengths to PREMA-treated or unetched enamel.

  20. Surface/interface morphology and bond strength to glass ceramic etched for different periods.

    PubMed

    Naves, Lucas Z; Soares, Carlos J; Moraes, Rafael R; Gonçalves, Luciano S; Sinhoreti, Mário Alexandre C; Correr-Sobrinho, Lourenço

    2010-01-01

    This study evaluated the influence of etching periods on the surface/interface morphology and bond strength to glass ceramic with or without application of an unfilled resin after silane. Ceramic discs were divided into 12 groups, defined by etching time with 10% hydrofluoric acid: G1/G7--etching for 10 seconds, G2/G8--20 seconds; G3/G9--40 seconds; G4/G10--60 seconds; G5/G11--120 seconds and G6/G12--60 + 60 seconds. All the groups were silanated after etching and G7 - G12 received a layer of unfilled resin after silane. Microshear testing using resin cement was performed, with 12 resin cylinders tested per group. The data was submitted to two-way ANOVA and the Student-Newman-Keuls' test (p<0.05). Evaluation of the etching pattern and bonding interfaces was conducted by SEM. The bond strength means (MPa) were: 19.4 +/- 3.5, 22.3 +/- 5.1, 22.2 +/- 3.2, 17.8 +/- 2.1, 15.3 +/- 3.0 and 14.3 +/- 1.8 for G1-G6 and 17.4 +/- 4.8, 21.3 +/- 2.1, 21.1 +/- 2.3, 24.7 +/- 5.8, 20.4 +/- 2.2 and 18.5 +/- 4.6 for G7-G12. Poor etching was detected after 10 seconds of conditioning; whereas deep channels were extensively observed on surfaces etched for 120 and 60 + 60 seconds. Unfilled voids underlying the ceramic-cement interface were detected when only silane was applied. Full completion of the irregularities on G11 was detected using unfilled resin. When only silane was applied, the 60-second group and those etched for longer periods showed lower bond strengths. When both silane and unfilled resin were applied, all etching periods generally showed similar values. In conclusion, the etching period influenced the surface/interface topography and bond strength to ceramic. The application of unfilled resin was able to infiltrate all unfilled voids beneath the ceramic-cement interface, except on re-etched surfaces.

  1. Evaluation of dry etching and defect repair of EUVL mask absorber layer

    NASA Astrophysics Data System (ADS)

    Abe, Tsukasa; Nishiguchi, Masaharu; Amano, Tsuyoshi; Motonaga, Toshiaki; Sasaki, Shiho; Mohri, Hiroshi; Hayashi, Naoya; Tanaka, Yuusuke; Nishiyama, Iwao

    2004-12-01

    EUVL mask process of absorber layer, buffer layer dry etching and defect repair were evaluated. TaGeN and Cr were selected for absorber layer and buffer layer, respectively. These absorber layer and buffer layer were coated on 6025 Qz substrate. Two dry etching processes were evaluated for absorber layer etching. One is CF4 plasma process and the other is Cl2 plasma process. Etch bias uniformity, selectivity, cross section profile and resist damage were evaluated for each process. Disadvantage of CF4 plasma process is low resist selectivity and Cl2 plasma process is low Cr selectivity. CF4 plasma process caused small absorber layer damage on isolate line and Cl2 plasma process caused Cr buffer layer damage. To minimize these damages overetch time was evaluated. Buffer layer process was also evaluated. Buffer layer process causes capping layer damage. Therefore, etching time was optimized. FIB-GAE and AFM machining were applied for absorber layer repair test. XeF2 gas was used for FIB-GAE. Good selectivity between absorber layer and buffer layer was obtained using XeF2 gas. However, XeF2 gas causes side etching of TaGeN layer. AFM machining repair technique was demonstrated for TaGeN layer repair.

  2. New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.; Beheim, Glenn M.

    2005-01-01

    Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

  3. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    NASA Astrophysics Data System (ADS)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  4. Assessment of Microshear Bond Strength: Self-Etching Sealant versus Conventional Sealant

    PubMed Central

    Biria, Mina; Ghasemi, Amir; Torabzadeh, Hassan; Shisheeian, Arash; Baghban, Alireza Akbarzadeh

    2014-01-01

    Objective Recently, self-etching fissure sealants have been introduced to reduce technical sensitivity; however, their efficacy should be assessed. The aim of this study was to assess of the microshear bond strength of self-etching and conventional fissure sealants. Materials and Methods: Thirty non-carious third molars were randomly divided into three groups (N=10). Microcylinders of Concise fissure sealant were bonded to prepared buccal and lingual surfaces using the two following procedures. In the first group, phosphoric acid was used to prepare the substrate; whereas in group two, Concise was used in combination with Prompt L-Pop. In group 3, a self-etching fissure sealant (Enamel Loc) was utilized per se. After 24 hours, the samples were subjected to 500 rounds of thermocycling and shear bond testing using a microtensile tester machine with a crosshead speed of 0.5mm/min. Data were analyzed using one-way repeated measure ANOVA and Bonferroni Post HOC tests (SPSS version 16). Results: The mean and standard deviation of microshear bond strength of the groups were as follows: Group 1: Concise+ etching (14.59 ± 1.19 MPa), Group 2: Concise+Prompt L-Pop (12.86 ± 1.98 MPa), and Group 3: Enamel Loc (5.59 ± 0.72 MPa). One-way ANOVA revealed that all the differences were significant and the conventional sealant exhibited the highest mean bond strength. Conclusion: Conventional sealant using phosphoric acid etch application prior to fissure sealant application demonstrated more bond strength in comparison with that of self-etch bonding and self-etch sealant. PMID:24910688

  5. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  6. SERUM VITAMIN B12, IRON AND FOLIC ACID DEFICIENCIES IN OBESE INDIVIDUALS SUBMITTED TO DIFFERENT BARIATRIC TECHNIQUES

    PubMed Central

    SILVA, Rafaella de Andrade; MALTA, Flávia Monteiro França; CORREIA, Maria Flora Ferreira Sampaio Carvalho; BURGOS, Maria Goretti Pessoa de Araújo

    2016-01-01

    ABSTRACT Background: Different surgical techniques to combat obesity combine malabsorption with restrictive procedures and can lead to metabolic problems, such as micronutrient deficiencies. Aim: Assess vitamin B12, iron and folic acid deficiencies associated with the lifestyle of obese individuals having been submitted to different bariatric techniques. Methods: A retrospective analysis was performed using the electronic charts of patients submitted to bariatric surgery involving adjustable gastric banding and Roux-en-Y gastric bypass at the São João Hospital Center in the city of Porto, Portugal, between 2005 and 2010. The following data were collected: surgical technique, sex, age, marital status, serum concentrations of vitamin B12, iron and folic acid and postoperative lifestyle. A 5% significance level was used for the statistical analysis (p<0.05). Results: Among 286 individuals evaluated, females accounted for 90.9% of the overall sample (both techniques). Gastric banding was performed more (68.9%), but greater nutrient deficiencies were found following gastric bypass. Iron was the most prevalent deficiency (21.3%), followed by vitamin B12 (16.9%) and folic acid (4.5%). Mild to moderate alcohol intake, adherence to the diet and the use of multivitamins reduced the frequency, but did not avoid micronutrient deficiency. Conclusion: Vitamin B12, iron and folic acid deficiencies were found in the first and second year following the two bariatric techniques analyzed and were more frequent among individuals submitted to gastric bypass. PMID:27683779

  7. Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

    NASA Astrophysics Data System (ADS)

    Al'zhanova, A.; Dauletbekova, A.; Komarov, F.; Vlasukova, L.; Yuvchenko, V.; Akilbekov, A.; Zdorovets, M.

    2016-05-01

    The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38 MeV), 84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.

  8. The development of a method of producing etch resistant wax patterns on solar cells

    NASA Technical Reports Server (NTRS)

    Pastirik, E.

    1980-01-01

    A potentially attractive technique for wax masking of solar cells prior to etching processes was studied. This technique made use of a reuseable wax composition which was applied to the solar cell in patterned form by means of a letterpress printing method. After standard wet etching was performed, wax removal by means of hot water was investigated. Application of the letterpress wax printing process to silicon was met with a number of difficulties. The most serious shortcoming of the process was its inability to produce consistently well-defined printed patterns on the hard silicon cell surface.

  9. Differentiating Milk and Non-milk Proteins by UPLC Amino Acid Fingerprints Combined with Chemometric Data Analysis Techniques.

    PubMed

    Lu, Weiying; Lv, Xiaxia; Gao, Boyan; Shi, Haiming; Yu, Liangli Lucy

    2015-04-22

    Amino acid fingerprinting combined with chemometric data analysis was used to differentiate milk and non-milk proteins in this study. Microwave-assisted hydrolysis and ultraperformance liquid chromatography (UPLC) were used to obtain the amino acid fingerprints. Both univariate and multivariate chemometrics methods were applied for differentiation. The confidence boundary of amino acid concentration, principal component analysis (PCA), and partial least-squares-discriminant analysis (PLS-DA) of the amino acid fingerprints demonstrated that there were significant differences between milk proteins and inexpensive non-milk protein powders from other biological sources including whey, peanut, corn, soy, fish, egg yolk, beef extract, collagen, and cattle bone. The results indicate that the amino acid compositions with the chemometric techniques could be applied for the detection of potential protein adulterants in milk.

  10. Structure, spectra and antioxidant action of ascorbic acid studied by density functional theory, Raman spectroscopic and nuclear magnetic resonance techniques.

    PubMed

    Singh, Gurpreet; Mohanty, B P; Saini, G S S

    2016-02-15

    Structure, vibrational and nuclear magnetic resonance spectra, and antioxidant action of ascorbic acid towards hydroxyl radicals have been studied computationally and in vitro by ultraviolet-visible, nuclear magnetic resonance and vibrational spectroscopic techniques. Time dependant density functional theory calculations have been employed to specify various electronic transitions in ultraviolet-visible spectra. Observed chemical shifts and vibrational bands in nuclear magnetic resonance and vibrational spectra, respectively have been assigned with the help of calculations. Changes in the structure of ascorbic acid in aqueous phase have been examined computationally and experimentally by recording Raman spectra in aqueous medium. Theoretical calculations of the interaction between ascorbic acid molecule and hydroxyl radical predicted the formation of dehydroascorbic acid as first product, which has been confirmed by comparing its simulated spectra with the corresponding spectra of ascorbic acid in presence of hydrogen peroxide.

  11. Structure, spectra and antioxidant action of ascorbic acid studied by density functional theory, Raman spectroscopic and nuclear magnetic resonance techniques

    NASA Astrophysics Data System (ADS)

    Singh, Gurpreet; Mohanty, B. P.; Saini, G. S. S.

    2016-02-01

    Structure, vibrational and nuclear magnetic resonance spectra, and antioxidant action of ascorbic acid towards hydroxyl radicals have been studied computationally and in vitro by ultraviolet-visible, nuclear magnetic resonance and vibrational spectroscopic techniques. Time dependant density functional theory calculations have been employed to specify various electronic transitions in ultraviolet-visible spectra. Observed chemical shifts and vibrational bands in nuclear magnetic resonance and vibrational spectra, respectively have been assigned with the help of calculations. Changes in the structure of ascorbic acid in aqueous phase have been examined computationally and experimentally by recording Raman spectra in aqueous medium. Theoretical calculations of the interaction between ascorbic acid molecule and hydroxyl radical predicted the formation of dehydroascorbic acid as first product, which has been confirmed by comparing its simulated spectra with the corresponding spectra of ascorbic acid in presence of hydrogen peroxide.

  12. Chemically Etched Open Tubular and Monolithic Emitters for Nanoelectrospray Ionization Mass Spectrometry

    SciTech Connect

    Kelly, Ryan T.; Page, Jason S.; Luo, Quanzhou; Moore, Ronald J.; Orton, Daniel J.; Tang, Keqi; Smith, Richard D.

    2006-11-15

    We have developed a new procedure for fabricating fused silica emitters for electrospray ionization-mass spectrometry (ESI-MS) in which the end of a bare fused silica capillary is immersed into aqueous hydrofluoric acid, and water is pumped through the capillary to prevent etching of the interior. Surface tension causes the etchant to climb the capillary exterior, and the etch rate in the resulting meniscus decreases as a function of distance from the bulk solution. Etching continues until the silica touching the hydrofluoric acid reservoir is completely removed, essentially stopping the etch process. The resulting emitters have no internal taper, making them much less prone to clogging compared to e.g. pulled emitters. The high aspect ratios and extremely thin walls at the orifice facilitate very low flow rate operation; stable ESI-MS signals were obtained for model analytes from 5-μm-diameter emitters at a flow rate of 5 nL/min with a high degree of inter-emitter reproducibility. In extensive evaluation, the etched emitters were found to enable approximately four times as many LC-MS analyses of proteomic samples before failing compared with conventional pulled emitters. The fabrication procedure was also employed to taper the ends of polymer monolith-containing silica capillaries for use as ESI emitters. In contrast to previous work, the monolithic material protrudes beyond the fused silica capillaries, improving the monolith-assisted electrospray process.

  13. Micro fiber-optic Fabry-Perot interferometer fabricated by chemical etching of Er-doped fiber

    NASA Astrophysics Data System (ADS)

    Gong, Yuan; Rao, Yun-Jiang; Guo, Yu; Wu, Yu; Ran, Zeng-Ling

    2009-10-01

    Micro extrinsic fiber-optic Fabry-Perot interferometers (MEFPI) are fabricated by chemically etching Er-doped fiber and then splicing the etched fiber to a single-mode fiber, for the first time to our knowledge. By using the mixture of Hydrochloric (HCl) acid and Hydrofluoric (HF) acid as etching solution, a cavity length of up to ~27 μm and a maximum fringe contrast of ~24dB are obtained. Experimental results show that the MEFPI is insensitive to temperature change but highly sensitive to strain, with temperature and strain sensitivities of ~0.65 pm/°C and 3.15 pm/ μɛ, respectively. Such type of MEFPI sensors based on the etched Er-doped fiber is compact, cost-effective and especially suitable for mass production, offering great potential for a wide range of applications.

  14. Acute arsenic poisoning treated by intravenous dimercaptosuccinic acid (DMSA) and combined extrarenal epuration techniques.

    PubMed

    Hantson, Philippe; Haufroid, Vincent; Buchet, Jean-Pierre; Mahieu, Paul

    2003-01-01

    Arsenic poisoning was diagnosed in a 26-year-old man who had been criminally intoxicated over the last two weeks preceding admission by the surreptitious oral administration of probably 10 g of arsenic trioxide (As2O3). The patient developed severe manifestations of toxic hepatitis and pancreatitis, and thereafter neurological disorders, respiratory distress, acute renal failure, and cardiovascular disturbances. In addition to supportive therapy, extrarenal elimination techniques and chelating agents were used. Dimercaprol (BAL) and dimercaptosuccinic acid (DMSA or succimer) were used simultaneously as arsenic chelating agents for two days, and thereafter DMSA was used alone. DMSA was administered by intravenous (20 mg/kg/d for five days, then 10 mg/kg/d for six days) and intraperitoneal route. Intravenous DMSA infusion was well tolerated and resulted in an increase in arsenic blood concentration immediately after the infusion. Continuous venovenous hemofiltration combined with hemodialysis, and peritoneal dialysis were proposed to enhance arsenic elimination. It was calculated that over an 11-day period 14.5 mg arsenic were eliminated by the urine, 26.7 mg by hemodialysis, 17.8 mg by peritoneal dialysis, and 7.8 mg by continuous venovenous hemofiltration. These amounts appeared negligible with regard to the probable ingested dose. The patient died on day 26 from the consequences of multiple organ failure, with subarachnoid hemorrhage and generalized infection caused by Aspergillus fumigatus.

  15. Enhancement of carvedilol solubility by solid dispersion technique using cyclodextrins, water soluble polymers and hydroxyl acid.

    PubMed

    Yuvaraja, K; Khanam, Jasmina

    2014-08-01

    Aim of the present work is to enhance aqueous solubility of carvedilol (CV) by solid dispersion technique using wide variety of carriers such as: β-cyclodextrin (βCD), hydroxypropyl-β-cyclodextrin (HPβCD), tartaric acid (TA), polyvinyl pyrrolidone K-30 (PVP K-30) and poloxamer-407 (PLX-407). Various products of 'CV-solid dispersion' had been studied extensively in various pH conditions to check enhancement of solubility and dissolution characteristics of carvedilol. Any physical change upon interaction between CV and carriers was confirmed by instrumental analysis: XRD, DSC, FTIR and SEM. Negative change of Gibb's free energy and complexation constants (Kc, 75-240M(-1), for cyclodextrins and 1111-20,365M(-1), for PVP K-30 and PLX-407) were the evidence of stable nature of the binding between CV and carriers. 'Solubility enhancement factor' of ionized-CV was found high enough (340 times) with HPβCD in presence of TA. TA increases the binding efficiency of cyclodextrin and changing the pH of microenvironment in dissolution medium. In addition, ionization process was used to increase the apparent intrinsic solubility of drug. In vitro, dissolution time of CV was remarkably reduced in the solid dispersion system compared to that of pure drug. This may be attributed to increased wettability, dispersing ability and transformation of crystalline state of drug to amorphous one.

  16. Glyphosate detection with ammonium nitrate and humic acids as potential interfering substances by pulsed voltammetry technique.

    PubMed

    Martínez Gil, Pablo; Laguarda-Miro, Nicolas; Camino, Juan Soto; Peris, Rafael Masot

    2013-10-15

    Pulsed voltammetry has been used to detect and quantify glyphosate on buffered water in presence of ammonium nitrate and humic substances. Glyphosate is the most widely used herbicide active ingredient in the world. It is a non-selective broad spectrum herbicide but some of its health and environmental effects are still being discussed. Nowadays, glyphosate pollution in water is being monitored but quantification techniques are slow and expensive. Glyphosate wastes are often detected in countryside water bodies where organic substances and fertilizers (commonly based on ammonium nitrate) may also be present. Glyphosate also forms complexes with humic acids so these compounds have also been taken into consideration. The objective of this research is to study the interference of these common pollutants in glyphosate measurements by pulsed voltammetry. The statistical treatment of the voltammetric data obtained lets us discriminate glyphosate from the other studied compounds and a mathematical model has been built to quantify glyphosate concentrations in a buffer despite the presence of humic substances and ammonium nitrate. In this model, the coefficient of determination (R(2)) is 0.977 and the RMSEP value is 2.96 × 10(-5) so the model is considered statistically valid.

  17. Preparation of Poly Acrylic Acid-Poly Acrylamide Composite Nanogels by Radiation Technique

    PubMed Central

    Ghorbaniazar, Parisa; Sepehrianazar, Amir; Eskandani, Morteza; Nabi-Meibodi, Mohsen; Kouhsoltani, Maryam; Hamishehkar, Hamed

    2015-01-01

    Purpose: Nanogel, a nanoparticle prepared from a cross-linked hydrophilic polymer network, has many biomedical applications. A radiation technique has recently been introduced as one of the appropriate methods for the preparation of polymeric nanogels due to its additive-free initiation and easy control procedure. Methods: We have investigated the formation of nano-sized polymeric gels, based on the radiation-induced inter- and intra-molecular cross-linking of the inter-polymer complex (IPC) of polyacrylamide (PAAm) and polyacrylic acide (PAAc). Results: The results indicated that the prepared polymeric complex composed of PAAm and PAAc was converted into nanogel by irradiation under different doses (1, 3, 5 and 7 kGy). This was due to inter- and intra-molecular cross-linking at the range of 446-930 nm as characterized by the photon correlation spectroscopy method. Increasing the irradiation dose reduced the size of nanoparticles to 3 kGy; however, the higher doses increased the size and size distribution. Scanning electron microscopy images indicated the nanogel formation in the reported size by particle size and showed the microcapsule structure of the prepared nanogels. Biocompatibility of nanogels were assessed and proved by MTT assay. Conclusion: It was concluded that low dose irradiation can be successfully applied for nanometre-ranged hydrogel. PMID:26236667

  18. Development of experimental techniques to study protein and nucleic acid structures

    SciTech Connect

    Trewhella, J.; Bradbury, E.M.; Gupta, G.; Imai, B.; Martinez, R.; Unkefer, C.

    1996-04-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). This research project sought to develop experimental tools for structural biology, specifically those applicable to three-dimensional, biomolecular-structure analysis. Most biological systems function in solution environments, and the ability to study proteins and polynucleotides under physiologically relevant conditions is of paramount importance. The authors have therefore adopted a three-pronged approach which involves crystallographic and nuclear magnetic resonance (NMR) spectroscopic methods to study protein and DNA structures at high (atomic) resolution as well as neutron and x-ray scattering techniques to study the complexes they form in solution. Both the NMR and neutron methods benefit from isotope labeling strategies, and all provide experimental data that benefit from the computational and theoretical tools being developed. The authors have focused on studies of protein-nucleic acid complexes and DNA hairpin structures important for understanding the regulation of gene expression, as well as the fundamental interactions that allow these complexes to form.

  19. Plasma characteristics and etch uniformity in CF4 magnetron etching using an annular permanent magnet

    NASA Astrophysics Data System (ADS)

    Kinoshita, Haruhisa; Ishida, Toshimasa; Ohno, Seigo

    1987-11-01

    Etch characteristics of SiO2 and Si obtained by magnetron etching using an annular permanent magnet were analyzed. From these analyses, etch characteristics were found to be classified into three regimes. Remarkable enhancements in SiO2 etch rate, 25-40 times, were observed at constant Vrf by applying magnetic field of 150 G. Ion densities over the cathode were found to be distributed linearly along the E×B drift direction. Such an ion density distribution will be formed by the repeated process (ionization→ion bombardment→electron emission and drift→ionization). Etch distribution can be averaged and flattened to a uniformity of below ±2% by the magnetic field being rotated in 90° steps.

  20. Polymer etching in the oxygen afterglow - Increased etch rates with increased reactor loading

    NASA Technical Reports Server (NTRS)

    Lerner, N. R.; Wydeven, T.

    1989-01-01

    Reactor loading has an effect on the etch rate (rate of decrease of film thickness) of films of polyvinylfluoride (Tedlar) and polyethylene exposed in the afterglow of an RF discharge in oxygen. The etch rate is found to increase with the total surface area of the polymer exposed in the reactor. The etch rates of polypyromellitimide (Kapton H) and polystyrene under these conditions are very low. However, the etch rate of these polymers is greatly enhanced by adding either Tedlar or polyethylene to the reactor. A kinetic model is proposed based on the premise that the oxygen atoms produced by the RF discharge react with Tedlar or polyethylene to produce a much more reactive species, which dominates the etching of the polymers studied.

  1. Spectrophotometric Determination of the Dissociation Constant of an Acid-Base Indicator Using a Mathematical Deconvolution Technique

    ERIC Educational Resources Information Center

    Alter, Krystyn P.; Molloy, John L.; Niemeyer, Emily D.

    2005-01-01

    A laboratory experiment reinforces the concept of acid-base equilibria while introducing a common application of spectrophotometry and can easily be completed within a standard four-hour laboratory period. It provides students with an opportunity to use advanced data analysis techniques like data smoothing and spectral deconvolution to…

  2. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    SciTech Connect

    Nakazaki, Nobuya Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i} < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher E{sub i}, where the rms surface roughness decreases substantially with E{sub i} down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on E{sub i} were also observed in the etch rate versus √(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  3. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  4. Periodic nanostructuring of Er/Yb-codoped IOG1 phosphate glass by using ultraviolet laser-assisted selective chemical etching

    SciTech Connect

    Pappas, C.; Pissadakis, S.

    2006-12-01

    The patterning of submicron period ({approx_equal}500 nm) Bragg reflectors in the Er/Yb-codoped IOG1 Schott, phosphate glass is demonstrated. A high yield patterning technique is presented, wherein high volume damage is induced into the glass matrix by exposure to intense ultraviolet 213 nm, 150 ps Nd:YAG laser radiation and, subsequently, a chemical development in potassium hydroxide (KOH)/ethylenediamine tetra-acetic acid (EDTA) aqueous solution selectively etches the exposed areas. The electronic changes induced by the 213 nm ultraviolet irradiation are examined by employing spectrophotometric measurements, while an estimation of the refractive index changes recorded is provided by applying Kramers-Kronig transformation to the absorption change data. In addition, real time diffraction efficiency measurements were obtained during the formation of the volume damage grating. After the exposure, the growth of the relief grating pattern in time was measured at fixed time intervals and the dependence of the grating depth on the etching time and exposure conditions is presented. The gratings fabricated are examined by atomic and scanning electron microscopies to reveal the relief topology of the structures. Gratings with average depth of 120 nm and excellent surface quality were fabricated by exposing the IOG1 phosphate glass to 36 000 pulses of 208 mJ/cm{sup 2} energy density, followed by developing in the KOH/EDTA agent for 6 min.

  5. Titration of strong and weak acids by sequential injection analysis technique.

    PubMed

    Maskula, S; Nyman, J; Ivaska, A

    2000-05-31

    A sequential injection analysis (SIA) titration method has been developed for acid-base titrations. Strong and weak acids in different concentration ranges have been titrated with a strong base. The method is based on sequential aspiration of an acidic sample zone and only one zone of the base into a carrier stream of distilled water. On their way to the detector, the sample and the reagent zones are partially mixed due to the dispersion and thereby the base is partially neutralised by the acid. The base zone contains the indicator. An LED-spectrophotometer is used as detector. It senses the colour of the unneutralised base and the signal is recorded as a typical SIA peak. The peak area of the unreacted base was found to be proportional to the logarithm of the acid concentration. Calibration curves with good linearity were obtained for a strong acid in the concentration ranges of 10(-4)-10(-2) and 0.1-3 M. Automatic sample dilution was implemented when sulphuric acid at concentration of 6-13 M was titrated. For a weak acid, i.e. acetic acid, a linear calibration curve was obtained in the range of 3x10(-4)-8x10(-2) M. By changing the volumes of the injected sample and the reagent, different acids as well as different concentration ranges of the acids can be titrated without any other adjustments in the SIA manifold or the titration protocol. PMID:18967966

  6. Titration of strong and weak acids by sequential injection analysis technique.

    PubMed

    Maskula, S; Nyman, J; Ivaska, A

    2000-05-31

    A sequential injection analysis (SIA) titration method has been developed for acid-base titrations. Strong and weak acids in different concentration ranges have been titrated with a strong base. The method is based on sequential aspiration of an acidic sample zone and only one zone of the base into a carrier stream of distilled water. On their way to the detector, the sample and the reagent zones are partially mixed due to the dispersion and thereby the base is partially neutralised by the acid. The base zone contains the indicator. An LED-spectrophotometer is used as detector. It senses the colour of the unneutralised base and the signal is recorded as a typical SIA peak. The peak area of the unreacted base was found to be proportional to the logarithm of the acid concentration. Calibration curves with good linearity were obtained for a strong acid in the concentration ranges of 10(-4)-10(-2) and 0.1-3 M. Automatic sample dilution was implemented when sulphuric acid at concentration of 6-13 M was titrated. For a weak acid, i.e. acetic acid, a linear calibration curve was obtained in the range of 3x10(-4)-8x10(-2) M. By changing the volumes of the injected sample and the reagent, different acids as well as different concentration ranges of the acids can be titrated without any other adjustments in the SIA manifold or the titration protocol.

  7. Si nanowires arrays fabricated by wet chemical etching for antireflection and self-cleaning

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Wang, Xiaotao; Lai, Wuxing; Tang, Zirong

    2011-11-01

    Here we report a simple and cost effective fabrication technique, which created large area vertical Si nanowires (diameter in ~200 nm) by means of silver induced wet chemical etching on single crystalline Si substrates. By this technique, Si nanowires were fabricated on single crystalline in aqueous 5M HF and 0.02M AgNO3 solution at room temperature. The scanning electron microscope (SEM) images indicate that etched silicon wafers consist of dense and nearly vertically aligned one-dimensional nanostructures. Length of Si nanowires was found to increase linearly with etching time (0-300 min). The mechanism of vertical nanowires formation can be understood as being a self-assembled Ag induced selective etching process based on the localized microscopic electrochemical cell model. A low reflectivity averaged ~1.7% from 450 to 790 nm was observed. The nanometer scale rough surface can make water droplet either in the so-called Wenzel or the Cassie regime, which can increase contact angle (CA). High CA makes the surface hydrophobicity and self-cleaning. Water CA (150°) was observed on the etched Si surface. Such antireflection (AR) and self-cleaning surface may have potential applications for silicon solar cells.

  8. Si nanowires arrays fabricated by wet chemical etching for antireflection and self-cleaning

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Wang, Xiaotao; Lai, Wuxing; Tang, Zirong

    2012-02-01

    Here we report a simple and cost effective fabrication technique, which created large area vertical Si nanowires (diameter in ~200 nm) by means of silver induced wet chemical etching on single crystalline Si substrates. By this technique, Si nanowires were fabricated on single crystalline in aqueous 5M HF and 0.02M AgNO3 solution at room temperature. The scanning electron microscope (SEM) images indicate that etched silicon wafers consist of dense and nearly vertically aligned one-dimensional nanostructures. Length of Si nanowires was found to increase linearly with etching time (0-300 min). The mechanism of vertical nanowires formation can be understood as being a self-assembled Ag induced selective etching process based on the localized microscopic electrochemical cell model. A low reflectivity averaged ~1.7% from 450 to 790 nm was observed. The nanometer scale rough surface can make water droplet either in the so-called Wenzel or the Cassie regime, which can increase contact angle (CA). High CA makes the surface hydrophobicity and self-cleaning. Water CA (150°) was observed on the etched Si surface. Such antireflection (AR) and self-cleaning surface may have potential applications for silicon solar cells.

  9. Hyaluronic acid/chondroitin sulfate-based hydrogel prepared by gamma irradiation technique.

    PubMed

    Zhao, Linlin; Gwon, Hui-Jeong; Lim, Youn-Mook; Nho, Young-Chang; Kim, So Yeon

    2014-02-15

    Gamma-ray irradiation of novel hydrogels was used to develop a biocompatible hydrogel system for skin tissue engineering. These novel hydrogels are composed of natural polymers including hyaluronic acid (HA) and chondroitin sulfate (CS), and the synthetic polymer, poly(vinyl alcohol) (PVA). The γ-ray irradiation method has advantages, such as relatively simple manipulation without need of any extra reagents for polymerization and cross-linking. We synthesized HA and CS derivatives with polymerizable residues. The HA/CS/PVA hydrogels with various compositions were prepared by using γ-ray irradiation technique and their physicochemical properties were investigated to evaluate the feasibility of their use as artificial skin substitutes. HA/CS/PVA hydrogels showed an 85-88% degree of gelation under 15 kGy radiation. All HA/CS/PVA hydrogels exhibited more than 90% water content and reached an equilibrium swelling state within 24h. Hydrogels with higher concentrations of hyaluronidase solution and HA/CS content had proportionally higher enzymatic degradation rates. The drug release behaviors from HA/CS/PVA hydrogels were influenced by the composition of the hydrogel and drug properties. Exposure of human keratinocyte (HaCaT) culture to the extracts of HA/CS/PVA hydrogels did not significantly affect the cell viability. All HaCaT cell cultures exposed to the extracts of HA/CS/PVA hydrogels exhibited greater than 92% cell viability. The HaCaT growth in HA/CS/PVA hydrogels gradually increased as a function of culture time. After 7 days, the HaCaT cells in all HA/CA/PVA hydrogels exhibited more than 80% viability compared to the control group HaCaT culture on a culture plate. PMID:24507324

  10. Anisotropic etching of monocrystalline silicon under subcritical conditions

    NASA Astrophysics Data System (ADS)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  11. A relative humidity sensing probe based on etched thin-core fiber coated with polyvinyl alcohol

    NASA Astrophysics Data System (ADS)

    Sun, Hao; Yang, Zaihang; Zhou, Libin; Liu, Nan; Gang, Tingting; Qiao, Xueguang; Hu, Manli

    2015-12-01

    A relative humidity (RH) sensing probe based on etched thin-core fiber (TCF) coated with polyvinyl alcohol (PVA) is proposed and experimentally demonstrated.This sensor is constructed by splicing a section of TCF with a single mode fiber (SMF), then part of the TCF's cladding is etched by hydrofluoric acid solution and finally the tip of TCF is coated with PVA. Experimental results demonstrate that this sensor can measure the ambient RH by demodulating the power variation of reflection spectrum. The power demodulation method make this sensor can ignore the temperature cross-sensitivity and have an extensive application prospect.

  12. Hybrid chemical etching of femtosecond laser irradiated structures for engineered microfluidic devices

    NASA Astrophysics Data System (ADS)

    LoTurco, S.; Osellame, R.; Ramponi, R.; Vishnubhatla, K. C.

    2013-08-01

    We report on the fabrication of 3D buried micro-structures in fused silica glass using the selective chemical etching along femtosecond laser irradiated zones. Specifically, we have exploited a novel approach combining two different etching agents in successive steps. The widely used hydrofluoric acid solution, which provides fast volume removal, and potassium hydroxide solution, which exhibits high selectivity, are used to fabricate microfluidic structures. We demonstrate that this hybrid approach takes advantage of both of the individual etchants’ special characteristics and facilitates prototyping and fabrication of complex geometries for microfluidic devices.

  13. Solderability enhancement of copper through chemical etching

    SciTech Connect

    Stevenson, J.O.; Guilinger, T.R.; Hosking, F.M.; Yost, F.G.; Sorensen, N.R.

    1995-05-01

    Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. The authors are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, the authors present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

  14. Analytical model of plasma-chemical etching in planar reactor

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  15. Radicals Are Required for Thiol Etching of Gold Particles.

    PubMed

    Dreier, Timothy A; Ackerson, Christopher J

    2015-08-01

    Etching of gold with an excess of thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is unclear. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initiator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process.

  16. Radicals are required for thiol etching of gold particles

    PubMed Central

    Dreier, Timothy A.

    2016-01-01

    Etching of gold with excess thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is opaque. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process. PMID:26089294

  17. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    NASA Astrophysics Data System (ADS)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  18. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  19. A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements.

    PubMed

    Hildreth, Owen J; Rykaczewski, Konrad; Fedorov, Andrei G; Wong, Ching P

    2013-02-01

    Metal-assisted Chemical Etching of silicon has recently emerged as a powerful technique to fabricate 1D, 2D, and 3D nanostructures in silicon with high feature fidelity. This work demonstrates that out-of-plane rotational catalysts utilizing polymer pinning structures can be designed with excellent control over rotation angle. A plastic deformation model was developed establishing that the catalyst is driven into the silicon substrate with a minimum pressure differential across the catalyst thickness of 0.4-0.6 MPa. Force-displacement curves were gathered between an Au tip and Si or SiO(2) substrates under acidic conditions to show that Derjaguin and Landau, Verwey and Overbeek (DLVO) based forces are capable of providing restorative forces on the order of 0.2-0.3 nN with a calculated 11-18 MPa pressure differential across the catalyst. This work illustrates that out-of-plane rotational structures can be designed with controllable rotation and also suggests a new model for the driving force for catalyst motion based on DLVO theory. This process enables the facile fabrication of vertically aligned thin-film metallic structures and scalloped nanostructures in silicon for applications in 3D micro/nano-electromechanical systems, photonic devices, nanofluidics, etc.

  20. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    PubMed

    Uşümez, Serdar; Orhan, Metin; Uşümez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful

  1. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    PubMed

    Uşümez, Serdar; Orhan, Metin; Uşümez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful

  2. Synthesis of patterned freestanding nickel nanowires by using ion track-etched polyimide

    NASA Astrophysics Data System (ADS)

    Walewyns, T.; Scheen, G.; Tooten, E.; Francis, L. A.

    2011-05-01

    Nowadays, a lot of applications including nanoelectronics, spintronics or miniaturized sensors are using nanowires. Unfortunately, current techniques used for local synthesis of nanowires are still not fully compatible with common microfabrication techniques. In this study, we focus on the synthesis of patterned metallic nanowires by electrodeposition within nanoporous polyimide membranes integrated on 3 inch Si bulk wafers. Known to have a high planarization factor, a good resistance to most non-oxidizing acids and bases and to be CMOS compatible, polyimide is increasingly used in microsystems. Furthermore, like polycarbonate or polyester, nanoporous polyimide can be obtained by ion track-etching process. This polymer shows then a great interest to be used as a mold for nanowires growth. Patterned freestanding Nickel nanowires have been synthesized over a 100 nm thickness gold layer evaporated onto a SiO2/Si substrate, with diameters of 20 and 60 nm, and length between 2 and 2.5 μm, depending on the electrodeposition time. Such fabrication process is promising to achieve more complex microelectromechanical systems incorporating nanostructures.

  3. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    SciTech Connect

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  4. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  5. Complementary use of flow and sedimentation field-flow fractionation techniques for size characterizing biodegradable poly(lactic acid) nanospheres

    PubMed Central

    Contado, Catia; Dalpiaz, Alessandro; Leo, Eliana; Zborowski, Maciej; Williams, P. Stephen

    2009-01-01

    Poly(lactic acid) nanoparticles were synthesized using a modified evaporation method, testing two different surfactants (sodium cholate and Pluronic F68) for the process. During their formulation the prodrug 5′-octanoyl-CPA (Oct-CPA) of the antiischemic N6-cyclopentyladenosine (CPA) was encapsulated. Three different purification methods were compared with respect to the influence of surfactant on the size characteristics of the final nanoparticle product. Flow and sedimentation field-flow fractionation techniques (FlFFF and SdFFF, respectively) were used to size characterize the five poly(lactic acid) particle samples. Two different combinations of carrier solution (mobile phase) were employed in the FlFFF analyses, while a solution of poly(vinyl alcohol) was used as mobile phase for the SdFFF runs. The separation performances of the two techniques were compared and the particle size distributions, derived from the fractograms, were interpreted with the support of observations by scanning electron microscopy. Some critical aspects, such as the carrier choice and the channel thickness determination for the FlFFF, have been investigated. This is the first comprehensive comparison of the two FFF techniques for characterizing non standard particulate materials. The two FFF techniques proved to be complementary and gave good, congruent and very useful information on the size distributions of the five poly(lactic acid) particle samples. PMID:17482199

  6. [Fatty acid variation in yellowfin tuna, spotted weakfish and Florida pompano when submitted to six cooking techniques].

    PubMed

    Castro-González, María Isabel; Maafs-Rodríguez, Ana Gabriela; Romo Pérez-Gil, Fernando

    2013-03-01

    The aim of the present study was to analyze the effect of six cooking techniques (steamed, foiled, foiled with banana leaf, baked, microwave-cooked and light frying) in the fatty acid content of Thunnus albacore (yellowfin tuna), Cynoscionnebulosus (spotted weakfish) and Trachinotuscarolinus (Florida pompano). After cooking the fish fillets, fatty acid analyses were performed using gas chromatography. Total lipids increased in all cooking techniques in tunaand spotted weakfish. Saturated fatty acids of tuna and spotted weakfish increased in three cooking techniques, while in Florida pompano only gas oven raised their content. Lightly frying generated the highest content of n-3 in tuna and spotted weakfish, and the lowest in Florida pompano, specie that presented less variation. In tuna fish, the most recommended cooking techniques are foiled with aluminum and microwave oven; for spotted weakfish, foiled with banana leaf; while Florida pompano can be prepared using all cooking methods except gas oven. This information is useful to enrich data from chemical composition tables, in which concentrations are usually presented in raw food. PMID:24167961

  7. [Fatty acid variation in yellowfin tuna, spotted weakfish and Florida pompano when submitted to six cooking techniques].

    PubMed

    Castro-González, María Isabel; Maafs-Rodríguez, Ana Gabriela; Romo Pérez-Gil, Fernando

    2013-03-01

    The aim of the present study was to analyze the effect of six cooking techniques (steamed, foiled, foiled with banana leaf, baked, microwave-cooked and light frying) in the fatty acid content of Thunnus albacore (yellowfin tuna), Cynoscionnebulosus (spotted weakfish) and Trachinotuscarolinus (Florida pompano). After cooking the fish fillets, fatty acid analyses were performed using gas chromatography. Total lipids increased in all cooking techniques in tunaand spotted weakfish. Saturated fatty acids of tuna and spotted weakfish increased in three cooking techniques, while in Florida pompano only gas oven raised their content. Lightly frying generated the highest content of n-3 in tuna and spotted weakfish, and the lowest in Florida pompano, specie that presented less variation. In tuna fish, the most recommended cooking techniques are foiled with aluminum and microwave oven; for spotted weakfish, foiled with banana leaf; while Florida pompano can be prepared using all cooking methods except gas oven. This information is useful to enrich data from chemical composition tables, in which concentrations are usually presented in raw food.

  8. A near-infrarod spectroscopy technique for the control of fermentation processes: An application to lactic acid fermentation.

    PubMed

    Vaccari, G; Dosi, E; Campi, A L; Mantovani, G; González-Vara Y R, A; Matteuzzi, D

    1994-04-25

    A near-infrared (NIR) spectroscopy technique for the control of lactic acid fermentation process has been proposed. Lactic acid, glucose, and biomass concentrations were determined by the NIR spectroscopy method. The three parameters examined were closely correlated to the results obtained with classical laboratory procedures. Moreover, the conditions for the on-line utilization of the NIR spectroscopy measurement system were pointed out. The great versatility of the NIR spectroscopy should permit its use for other fermentation processes. (c) 1994 John Wiley & Sons, Inc.

  9. Choice of solvent extraction technique affects fatty acid composition of pistachio (Pistacia vera L.) oil.

    PubMed

    Abdolshahi, Anna; Majd, Mojtaba Heydari; Rad, Javad Sharifi; Taheri, Mehrdad; Shabani, Aliakbar; Teixeira da Silva, Jaime A

    2015-04-01

    Pistachio (Pistacia vera L.) oil has important nutritional and therapeutic properties because of its high concentration of essential fatty acids. The extraction method used to obtain natural compounds from raw material is critical for product quality, in particular to protect nutritional value. This study compared the fatty acid composition of pistachio oil extracted by two conventional procedures, Soxhlet extraction and maceration, analyzed by a gas chromatography-flame ionization detector (GC-FID). Four solvents with different polarities were tested: n-hexane (Hx), dichloromethane (DCM), ethyl acetate (EtAc) and ethanol (EtOH). The highest unsaturated fatty acid content (88.493 %) was obtained by Soxhlet extraction with EtAc. The Soxhlet method extracted the most oleic and linolenic acids (51.99 % and 0.385 %, respectively) although a higher concentration (36.32 %) of linoleic acid was extracted by maceration.

  10. Mechanism of cinnamic acid-induced trypsin inhibition: a multi-technique approach.

    PubMed

    Zhang, Hongmei; Zhou, Qiuhua; Cao, Jian; Wang, Yanqing

    2013-12-01

    In order to investigate the association of the protease trypsin with cinnamic acid, the interaction was characterized by using fluorescence, UV-vis absorption spectroscopy, molecular modeling and an enzymatic inhibition assay. The binding process may be outlined as follows: cinnamic acid can interact with trypsin with one binding site to form cinnamic acid-trypsin complex, resulting in inhibition of trypsin activity; the spectroscopic data show that the interaction is a spontaneous process with the estimated enthalpy and entropy changes being -8.95 kJ mol(-1) and 50.70 J mol(-1) K(-1), respectively. Noncovalent interactions make the main contribution to stabilize the trypsin-cinnamic acid complex; cinnamic acid can enter into the primary substrate-binding pocket and alter the environment around Trp and Tyr residues.

  11. Electron and Light Microscopy Techniques Suitable for Studying Fatigue Damage in a Crystallized Glass Ceramic

    NASA Technical Reports Server (NTRS)

    Harrell, Shelley; Zaretsky, Erwin V.

    1961-01-01

    The crystals of Pyroceram are randomly oriented and highly reflective so that standard microscopy techniques are not satisfactory for studying this material. Standard replicating procedures proved difficult to use. New microscopy techniques and procedures have therefore been developed. A method for locating, orienting, and identifying specific areas to be viewed with an electron microscope is described. This method not require any special equipment. Plastic replicas were found to be unsatisfactory because of their tendency to adhere to Pryoceram. This caused them to tear when released or resulted in artifacts. Preshadowed silicon monoxide replicas were satisfactory but required a releasing agent. A method of depositing the releasing agent is described. To polish specimens without evidence of fire-polishing, it was found necessary to use a vibratory polishing technique. Chrome oxide was used as the abrasive and either water or kerosene as the lubricant. Vibratory polishing is extremely slow, but surfaces so polished show no evidence of fire polishing, even when examined by electron microscopy. The most satisfactory etching process used for Pyroceram 9608 consisted of a primary etch of 5 milliliters of hydrochloric acid (concentrated), 5 milliliters of hydrogen fluoride (45 percent), and 45 milliliters of water, and a secondary etch with methyl alcohol replacing the water. Best results were obtained with total etching times from 25 to 30 seconds. Staining of the Pyroceram surface with a Sanford's marker was found to be an expedient way to reduce the glare of reflected light.

  12. Photoelectrochemical etching of silicon carbide (SiC) and its characterization

    NASA Technical Reports Server (NTRS)

    Collins, D. M.; Harris, G. L.; Wongchotigul, K.

    1995-01-01

    Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

  13. Fabrication of Glassy Carbon Molds Using Hydrogen Silsequioxane Patterned by Electron Beam Lithography as O2 Dry Etching Mask

    NASA Astrophysics Data System (ADS)

    Yasui, Manabu; Sugiyama, Yoshinari; Takahashi, Masaharu; Kaneko, Satoru; Uegaki, Jun-ichi; Hirabayashi, Yasuo; Sugimoto, Koh-ichi; Maeda, Ryutaro

    2008-06-01

    Glass is a good candidate material for optical devices because of its enhanced optical properties, the technique of die machining has not been established for the hot embossing of glass. In this study, we used the glassy carbon (GC) mold for the hot embossing of glass. An inductively coupled plasma reactive ion etching (ICP-RIE) using oxygen plasma was employed for the submicron structuring of the GC mold. Hydrogen silsesquioxane (HSQ) is a negative-type electron beam (EB) resist used to be resistant to oxygen plasma. HSQ patterns drawn by electron beam lithography (EBL) were used as the O2 dry etching mask. The etching selectivity between HSQ and GC was 35. The average of the extent of side etching was 40 nm at a depth of 300 nm. The side etching functioning as the draft angle was caused mainly by oxygen radicals, because HSQ patterns remained even after GC patterns were side-etched. We confirmed that the GC mold fabricated by O2 dry etching can be used for glass hot embossing. Since the mold lubricant was not rubbed on the mold surface, GC is the appropriate mold material for Pyrex glass.

  14. DEFECT SELECTIVE ETCHING OF THICK ALN LAYERS GROWN ON 6H-SIC SEEDS - A TRANSMISSION ELECTRON MICROSCOPY STUDY

    SciTech Connect

    Nyakiti, Luke; Chaudhari, Jharna; Kenik, Edward A; Lu, Peng; Edgar, J H

    2008-01-01

    In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the smallest etch pit size.

  15. Metal assisted catalyzed etched (MACE) black Si: optics and device physics.

    PubMed

    Toor, Fatima; Miller, Jeffrey B; Davidson, Lauren M; Duan, Wenqi; Jura, Michael P; Yim, Joanne; Forziati, Joanne; Black, Marcie R

    2016-08-25

    Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology.

  16. Metal assisted catalyzed etched (MACE) black Si: optics and device physics.

    PubMed

    Toor, Fatima; Miller, Jeffrey B; Davidson, Lauren M; Duan, Wenqi; Jura, Michael P; Yim, Joanne; Forziati, Joanne; Black, Marcie R

    2016-08-25

    Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology. PMID:27533490

  17. Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

    NASA Technical Reports Server (NTRS)

    Banks, B. A. (Inventor)

    1984-01-01

    The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

  18. Temporal development of optically etched gratings: a new method of investigating laser-induced damage.

    PubMed

    Cutter, M A; Key, P Y; Little, V I

    1974-06-01

    An optical etching technique for producing small diffraction gratings, in which a thin metallic film set at an angle to the axis of a ruby laser cavity acted as a Q-switch in the operation of that laser, was previously reported. Here we report a comprehensive investigation of the formation of such etched gratings by the effect of laser light on a thin film external to the laser cavity. A time resolved investigation has been made of the development of such gratings in a number of metallic films, and the effect of film thickness, incident laser intensity, and angular orientation of the film has been studied. PMID:20126205

  19. Plasma etching of the Group-III nitrides

    SciTech Connect

    Shul, R.; Pearton, S.J.; Abernathy, C.R.

    1996-01-01

    In reactive ion etching (RIE) of GaN, the ion bombardment can damage the material, so it is necessary to develop plasma etch processes. This paper reports etching of GaN in an ECR (electron cyclotron resonance) etch system using both the ECR/RIE mode and the RIE-only mode. Group III (Ga, In, Al) nitride ECR etching is reviewed as a function of plasma chemistry, power, temperature, and pressure; as the ECR microwave power increased, the ion density and etch rates increased, with the etch rate increasing the most for InN. GaN etch rates > 6500 {angstrom}/min have been observed in the ECR/RIE mode. 2 figs, 6 refs.

  20. Admittance spectroscopy of CdTe /CdS solar cells subjected to varied nitric-phosphoric etching conditions

    NASA Astrophysics Data System (ADS)

    Proskuryakov, Y. Y.; Durose, K.; Taele, B. M.; Welch, G. P.; Oelting, S.

    2007-01-01

    In this work we investigate the electric and structural properties of CdTe /CdS solar cells subjected to a nitric-phosphoric (NP) acid etching procedure, employed for the formation of a Te-rich layer before back contacting. The etching time is used as the only variable parameter in the study, while admittance spectroscopy is employed for the characterization of the cells' electric properties as well as for the analysis of the defect energy levels. Particular attention was also given to the characteristics of unetched devices and it is shown that despite the larger height of back-contact barrier such samples show well defined admittance spectra, as well as allow for extraction of as much as five defect levels in the range of 0.08-0.9eV above the valence band. In contrast, admittance characteristics of the etched samples show a decrease of the number of the detectable trap levels with increasing etching time. (Hence it is usual for only one or two trap levels to be reported in the literature for finished devices.) The latter leads to the anomalous Arrhenius energy plots as well as the breakdown of low-frequency capacitance characteristics for samples etched with times larger than 30s. The observed effects are attributed to physical thinning of the cells, the etching out of grain boundaries, and the tellurium enrichment of the CdTe surface by NP etching. We also perform analysis of the back-contact barrier height as extracted from dark I-V measurements at different temperatures. The dependence of this barrier height on NP etching time is compared with that of conversion efficiency, from which conclusions are drawn about both positive and negative effects of the nitric-phosphoric etch.

  1. Etch Profile Simulation Using Level Set Methods

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  2. Growth and characterization of an adduct 4-aminobenzoic acid with nicotinic acid

    NASA Astrophysics Data System (ADS)

    Anandhi, S.; Rajalakshmi, M.; Shyju, T. S.; Gopalakrishnan, R.

    2011-03-01

    Synthesis, crystal growth of an adduct 2:1 4-aminobenzoic acid-nicotinic acid (AMN) and characterization are reported. The crystallographic data of the title compound are obtained from single crystal X-ray diffraction technique. The optical absorbance spectrum from 200 to 2250 nm shows the cutoff occurs at 490 nm. Thermal analysis carried out reveals the melting point and thermal stability of the grown crystal. Dielectric studies were carried out at different temperatures and frequencies. Vicker's microhardness test was performed to analyze the mechanical strength of the grown specimen. The grown features were analyzed by chemical etching.

  3. Optimization of Track Etched Makrofol Etching Conditions for Short-term Exposure Duration

    NASA Astrophysics Data System (ADS)

    Moreno, V.; Font, Ll.

    Exposure time of nuclear track detectors at humid environments is normally limited to a few weeks because filter used to avoid humidity is not completely waterproof and, after several months, some parts of detector start to degrade. In other really extreme measurement conditions, like high aerosol content, high or low temperatures, etc., the exposure time also requires a reduction. Then detector detection limit becomes a problem, unless radon concentrations were high. In those cases where radon levels are not high enough a better detection efficiency is required. In our laboratory we use passive detectors based on the track etched Makrofol DE foil covered with aluminized Mylar and they are analyzed by means of an electrochemical etching. Our standard etching conditions allow analyzing detectors generally exposed for periods between three and six months. We have optimized our etching conditions to reduce the exposure time down to a month for common radon concentration values.

  4. Anodic etching of p-type cubic silicon carbide

    NASA Technical Reports Server (NTRS)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  5. Multilayer Badges Indicate Depths Of Ion Sputter Etches

    NASA Technical Reports Server (NTRS)

    Beattie, J. R.; Matossian, J. N.; Garvin, H. L.

    1994-01-01

    Multilayer badges devised to provide rapid, in-place indications of ion sputter etch rates. Badges conceived for use in estimating ion erosion of molybdenum electrodes used in inert-gas ion thrustors. Concept adapted to measure ion erosion in industrial sputter etching processes used for manufacturing of magnetic, electronic, and optical devices. Badge etched when bombarded by energetic ions. Badge layers exposed using mask. Contrast between layers facilitates counting of layers to determine etch depth.

  6. High index contrast polysiloxane waveguides fabricated by dry etching

    SciTech Connect

    Madden, S. J.; Zhang, M. Y.; Choi, D.-Y.; Luther-Davies, B.; Charters, R.

    2009-05-15

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG trade mark sign polysiloxane thin films. The use of a silica mask and CHF{sub 3}/O{sub 2} etch gas led to large etch selectivity between the silica and IPG trade mark sign of >20 and etch rates of >100 nm/min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

  7. Effects of N{sub 2} addition on chemical dry etching of silicon oxide layers in F{sub 2}/N{sub 2}/Ar remote plasmas

    SciTech Connect

    Hwang, J.Y.; Kim, D.J.; Lee, N.-E.; Jang, Y.C.; Bae, G.H.

    2006-07-15

    In this study, chemical dry etching characteristics of silicon oxide layers were investigated in the F{sub 2}/N{sub 2}/Ar remote plasmas. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive N{sub 2} gas on the etch rates of various silicon oxide layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the F{sub 2} flow rate, the additive N{sub 2} flow rate, and the substrate temperature. The etch rates of the various silicon oxide layers at room temperature were initially increased and then decreased with the N{sub 2} flow increased, which indicates an existence of the maximum etch rates. Increase in the oxide etch rates under the decreased optical emission intensity of the F radicals with the N{sub 2} flow increased implies that the chemical etching reaction is in the chemical reaction-limited regime, where the etch rate is governed by the surface chemical reaction rather than the F radical density. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments, the F{sub 2} gas flow, the additive N{sub 2} flow rate, and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon oxide layers.

  8. Evaluation of the Bond Strength of Resin Cements Used to Lute Ceramics on Laser-Etched Dentin

    PubMed Central

    Duzdar, Lale; Oksuz, Mustafa; Tanboga, Ilknur

    2014-01-01

    Abstract Objective: The purpose of this study was to investigate the shear bond strength (SBS) of two different adhesive resin cements used to lute ceramics on laser-etched dentin. Background data: Erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) laser irradiation has been claimed to improve the adhesive properties of dentin, but results to date have been controversial, and its compatibility with existing adhesive resin cements has not been conclusively determined. Materials and methods: Two adhesive cements, one “etch-and-rinse” [Variolink II (V)] and one “self-etch” [Clearfil Esthetic Cement (C)] luting cement, were used to lute ceramic blocks (Vita Celay Blanks, Vita) onto dentin surfaces. In total, 80 dentin specimens were distributed randomly into eight experimental groups according to the dentin surface-etching technique used Er,Cr:YSGG laser and Er:YAG laser: (1) 37% orthophosphoric acid+V (control group), (2) Er,Cr:YSGG laser+V, (3) Er,Cr:YSGG laser+acid+V, (4) Er:YAG laser+V, (5) Er:YAG laser+acid+V, (6) C, (7) Er,Cr:YSGG laser+C, and (8) Er:YAG laser+C. Following these applications, the ceramic discs were bonded to prepared surfaces and were shear loaded in a universal testing machine until fracture. SBS was recorded for each group in MPa. Shear test values were evaluated statistically using the Mann–Whitney U test. Results: No statistically significant differences were evident between the control group and the other groups (p>0.05). The Er,Cr:YSGG laser+A+V group demonstrated significantly higher SBS than did the Er,Cr:YSGG laser+V group (p=0.034). The Er,Cr:YSGG laser+C and Er:YAG laser+C groups demonstrated significantly lower SBS than did the C group (p<0.05). Conclusions: Dentin surfaces prepared with lasers may provide comparable ceramic bond strengths, depending upon the adhesive cement used. PMID:24992276

  9. Wavelength Dependence of UV Effect on Etch Rate and Noise in CR-39

    NASA Astrophysics Data System (ADS)

    Wiesner, Micah; Traynor, Nathan; McLean, James; Padalino, Stephen; Sangster, Craig; McCluskey, Michelle

    2014-10-01

    The use of CR-39 plastic as a SSNTD is an effective technique for recovering data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched at elevated temperatures with NaOH, producing signal pits at the nuclear track sites that are measurable by an optical microscope. CR-39 pieces also exhibit etch-induced noise, either surface roughness or pit-like features not caused by nuclear particles, which negatively affects the ability of observers to distinguish actual pits. When CR-39 is exposed to high intensity UV light after nuclear irradiation and before etching, an increase in etch rates and pit diameters is observed. UV exposure can also increase noise, which in the extreme can distort the shapes of particle pits. Analyzing the effects of different wavelengths in the UV spectrum we have determined that light of the wavelength 255 nm increases etch rates and pit diameters while causing less background noise than longer UV wavelengths. Preliminary research indicates that heating CR-39 to elevated temperatures (~80 °C) during UV exposure also improves the signal-to-noise ratio for this process. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

  10. Electrodeposited manganese dioxide nanostructures on electro-etched carbon fibers: High performance materials for supercapacitor applications

    SciTech Connect

    Kazemi, Sayed Habib; Maghami, Mostafa Ghaem; Kiani, Mohammad Ali

    2014-12-15

    Highlights: • We report a facile method for fabrication of MnO{sub 2} nanostructures on electro-etched carbon fiber. • MnO{sub 2}-ECF electrode shows outstanding supercapacitive behavior even at high discharge rates. • Exceptional cycle stability was achieved for MnO{sub 2}-ECF electrode. • The coulombic efficiency of MnO{sub 2}-ECF electrode is nearly 100%. - Abstract: In this article we introduce a facile, low cost and additive/template free method to fabricate high-rate electrochemical capacitors. Manganese oxide nanostructures were electrodeposited on electro-etched carbon fiber substrate by applying a constant anodic current. Nanostructured MnO{sub 2} on electro-etched carbon fiber was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive X-ray analysis. The electrochemical behavior of MnO{sub 2} electro-etched carbon fiber electrode was investigated by electrochemical techniques including cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy. A maximum specific capacitance of 728.5 F g{sup −1} was achieved at a scan rate of 5 mV s{sup −1} for MnO{sub 2} electro-etched carbon fiber electrode. Also, this electrode showed exceptional cycle stability, suggesting that it can be considered as a good candidate for supercapacitor electrodes.

  11. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    SciTech Connect

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  12. Fabrication of sub-15 nm aluminum wires by controlled etching

    SciTech Connect

    Morgan-Wall, T.; Hughes, H. J.; Hartman, N.; Marković, N.; McQueen, T. M.

    2014-04-28

    We describe a method for the fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is simultaneously measured in-situ. The etching process can be stopped when the desired resistance is reached, and can be restarted at a later time. The resulting nanowires show a superconducting transition as a function of temperature and magnetic field that is consistent with their smaller diameter. The width of the transition is similar to that of the lithographically defined wires, indicating that the etching process is uniform and that the wires are undamaged. This technique allows for precise control over the normal state resistance and can be used to create a variety of aluminum nanodevices.

  13. Nanopore detection of double stranded DNA using a track-etched polycarbonate membrane.

    PubMed

    Kececi, Kaan; San, Nevim; Kaya, Dila

    2015-11-01

    We investigate the resistive-pulse sensing of 50-bp DNA using track-etched polycarbonate (PC) nanopores and show the translocation dynamics originating from the electrophoretic transport of DNAs. Conically shaped PC nanopore membranes have been prepared with asymmetric chemical etching technique. We show the potential and concentration dependence of DNA translocation through a PC nanopore. We find that the translocation of DNA scales linearly with both potential and concentration. Additionally, the threshold potential is determined to complete the translocation. Finally, by investigating the current-pulse amplitudes of nanopores with different tip sizes, we show that the nanopore size can be successfully used to distinguish the DNA molecules. These results suggest great promise for the sensing of short DNAs and understanding the dynamics of the translocation process using chemically-etched PC nanopores.

  14. The role of vapour etching in the growth of epitaxial InP

    NASA Astrophysics Data System (ADS)

    Ashen, D. J.; Anderson, D. A.; Apsley, N.; Emeny, M. T.

    1982-12-01

    Undoped single epitaxial layers of InP have been grown by the In-PCI 3-H 2 technique. Hall data, carrier concentration profile and layer surface quality have been studied as a function of pre-growth vapour etching and source saturation conditions. Incomplete vapour etching is shown to lead to layers with low room temperature mobility, large carrier freeze-out between 290 and 77 K, and a large density of defects on the epitaxial layer surface. Carrier concentration profiles through such layers show evidence of a high conductivity region at the interface with the substrate which we suggest is formed by material grown during source saturation. We demonstrate that the growth of high carrier concentration material can take place from an unsaturated source, and we show that a two-layer model accounts quantitatively for the Hall data. These results can be used to specify the appropriate etching conditions to grow epitaxial layers with abrupt interfaces and high mobility.

  15. LOCALIZED MECHANICS OF DENTIN SELF-ETCHING ADHESIVE SYSTEM

    PubMed Central

    Anchieta, Rodolfo Bruniera; Rocha, Eduardo Passos; Ko, Ching-Chang; Sundfeld, Renato Herman; Martin, Manoel; Archangelo, Carlos Marcelo

    2007-01-01

    The bond strength of composite resins (CRs) to dentin is influenced by the interfacial microstructure of the hybrid layer (HL) and the resin tags (TAG). The contemporary self-etching primer adhesive systems overcame the inconvenient of the etch-and-rinse protocol. Studies, however, have demonstrated that HL thickness and TAG length vary according to the wetting time and additional use of acid-etching prior to self-etching primers. This study investigated the localized stress distribution in the HL and the dentin/adhesive interface. Two HL thicknesses (3 or 6 μm), two TAG lengths (13 or 17 μm) and two loading conditions (perpendicular and oblique-25o) were investigated by the finite element (FE) analysis. Five two-dimensional FE models (M) of a dentin specimen restored with CR (38 x 64 μm) were constructed: Ml - no HL and no TAG; M2 - 3 μm of HL and 13 μm of TAG; M3 - 3 μm of HL and 17 μm of TAG; M4 - 6 μm of HL and 13 μm of TAG; and M5 - 6 μm of HL and 17 μm of TAG. Two distributed loadings (L) (20N) were applied on CR surface: L1 - perpendicular, and L2 - oblique (25°). Fixed interfacial conditions were assigned on the border of the dentin specimen. Ansys 10.0 (Ansys®, Houston, PA, USA) software was used to calculate the stress fields. The peak of von Mises (σvM) and maximum principal stress (σmax) was higher in L2 than in L1. Microstructures (HL and TAG) had no effect on local stresses for L1. Decreasing HL decreased σvM and σmax in all structures for L2, but the TAG length had influence only on the peributular dentin. The thickness of HL had more influence on the σvM and σmax than TAG length. The peritubular dentin and its adjacent structures showed the highest σvM and σmax, mainly in the oblique loading. PMID:19089152

  16. Chromatographic techniques coupled with mass spectrometry for the determination of organic acids in the study of autism.

    PubMed

    Kałużna-Czaplińska, Joanna; Zurawicz, Ewa; Jóźwik, Jagoda

    2014-08-01

    Chromatographic methods find application in the diagnostics and prognosis of diseases. They are used in finding new biomarkers, which may result in early medical intervention. Early diagnosis and intervention are especially important in the case of diseases of unknown etiology. One of these is autism. Autism is a neurodevelopmental disorder characterized by severe impairment in reciprocal social interaction and communication and a pattern of repetitive or stereotyped behavior. Organic acids are intermediate metabolites of all major groups of organic cellular components and can play a role in the pathogenesis of autism. This review presents information about abnormal levels of some organic acids observed in the urine of children with autism and determination of acids with the use of chromatographic techniques. 342 literature sources on frequency (2005-2012) of the use of chromatographic methods in the determination of organic compounds in various body fluids were searched.

  17. Optimization of the separation of lysergic acid diethylamide in urine by a sweeping technique using micellar electrokinetic chromatography.

    PubMed

    Fang, Ching; Liu, Ju-Tsung; Lin, Cheng-Huang

    2002-07-25

    The separation and on-line concentrations of lysergic acid diethylamide (LSD), iso-lysergic acid diethylamide (iso-LSD) and lysergic acid N,N-methylpropylamide (LAMPA) in human urine were investigated by capillary electrophoresis-fluorescence spectroscopy using sodium dodecyl sulfate (SDS) as an anionic surfactant. A number of parameters such as buffer pH, SDS concentration, Brij-30 concentration and the content of organic solvent used in separation, were optimized. The techniques of sweeping-micellar electrokinetic chromatography (sweeping-MEKC) and cation-selective exhaustive injection-sweep-micellar electrokinetic chromatography (CSEI-sweep-MEKC) were used for determining on-line concentrations. The advantages and disadvantages of this procedure with respect to sensitivity, precision and simplicity are discussed and compared.

  18. Dopant Selective Reactive Ion Etching of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  19. CR-39 track etching and blow-up method

    DOEpatents

    Hankins, Dale E.

    1987-01-01

    This invention is a method of etching tracks in CR-39 foil to obtain uniformly sized tracks. The invention comprises a step of electrochemically etching the foil at a low frequency and a "blow-up" step of electrochemically etching the foil at a high frequency.

  20. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    NASA Astrophysics Data System (ADS)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low