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Sample records for active device layers

  1. High Efficiency Alternating Current Driven Organic Light Emitting Devices Employing Active Semiconducting Gate Layers

    NASA Astrophysics Data System (ADS)

    Smith, Gregory; Xu, Junwei; Carroll, David

    2015-03-01

    In this work, we describe the role of semiconductor-polymer interfaces in alternating current (AC) driven organic electroluminescent (EL) devices. We implement inorganic semiconducting materials between the external contact and the active layers in organic light EL devices. Precise control of capacitance and charge injection is required to realize bright and efficient large area AC driven devices. We show how this architecture results in active gating to the polymer layers, resulting in the novel ability to control the capacitance and charge injection characteristics. We propose a model based on band bending at the semiconductor-polymer interface. Furthermore, we elucidate the influence of the semiconductor-polymer interface on the internally coupled magnetic field generated in an alternating current driven organic light emitting device configuration. Magnetic fields can alter the ratios of singlet and triplet populations, and we show that internal generation of a magnetic field can dramatically alter the efficiency of light emission in organic EL devices.

  2. Polymer Solar Cell Device Characteristics Are Independent of Vertical Phase Separation in Active Layers

    NASA Astrophysics Data System (ADS)

    Loo, Yueh-Lin

    2013-03-01

    Preferential segregation of organic semiconductor constituents in multicomponent thin-film active layers has long been speculated to affect the characteristics of bulk-heterojunction polymer solar cells. Using soft-contact lamination and delamination schemes - with which we have been able to remove compositionally well characterized polymer thin films, flip them over so as to reverse their composition profiles, and then transfer them onto existing device platforms - we showed unambiguously that the device performance of P3HT:PCBM solar cells are independent of the interfacial segregation characteristics of the active layers. Temperature-dependent single-carrier diode measurements of the organic semiconductor constituents suggest that the origin of this invariance stems from the fact that P3HT comprises a high density of mid-gap states. Hole carriers in these mid-gap states can in turn recombine with electrons at the electron-collecting interface, effectively promoting electron transfer from the cathode to the active layer.

  3. Strained layer Fabry-Perot device

    DOEpatents

    Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

    1994-01-01

    An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

  4. Processes for multi-layer devices utilizing layer transfer

    SciTech Connect

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  5. Laser activated MTOS microwave device

    NASA Technical Reports Server (NTRS)

    Maserjian, J. (Inventor)

    1985-01-01

    A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.

  6. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu; Li, Wenguang; Jiang, Hua

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  7. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    PubMed Central

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  8. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

    PubMed

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  9. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    NASA Astrophysics Data System (ADS)

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-02-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound - morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) - are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm-2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

  10. Engineering long shelf life multi-layer biologically active surfaces on microfluidic devices for point of care applications

    PubMed Central

    Asghar, Waseem; Yuksekkaya, Mehmet; Shafiee, Hadi; Zhang, Michael; Ozen, Mehmet O.; Inci, Fatih; Kocakulak, Mustafa; Demirci, Utkan

    2016-01-01

    Although materials and engineered surfaces are broadly utilized in creating assays and devices with wide applications in diagnostics, preservation of these immuno-functionalized surfaces on microfluidic devices remains a significant challenge to create reliable repeatable assays that would facilitate patient care in resource-constrained settings at the point-of-care (POC), where reliable electricity and refrigeration are lacking. To address this challenge, we present an innovative approach to stabilize surfaces on-chip with multiple layers of immunochemistry. The functionality of microfluidic devices using the presented method is evaluated at room temperature for up to 6-month shelf life. We integrated the preserved microfluidic devices with a lensless complementary metal oxide semiconductor (CMOS) imaging platform to count CD4+ T cells from a drop of unprocessed whole blood targeting applications at the POC such as HIV management and monitoring. The developed immunochemistry stabilization method can potentially be applied broadly to other diagnostic immuno-assays such as viral load measurements, chemotherapy monitoring, and biomarker detection for cancer patients at the POC. PMID:26883474

  11. Multi-layer seal for electrochemical devices

    DOEpatents

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-11-16

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  12. Multi-layer seal for electrochemical devices

    SciTech Connect

    Chou, Yeong-Shyung; Meinhardt, Kerry D; Stevenson, Jeffry W

    2010-09-14

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  13. Active cleaning technique device

    NASA Technical Reports Server (NTRS)

    Shannon, R. L.; Gillette, R. B.

    1973-01-01

    The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

  14. Influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dots based solution-processed infrared photodetector.

    PubMed

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-22

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS(x)Se(1-x) quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS(x)Se(1-x) QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = M(P3HT):M(QDs)) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W(-1) and 1.02 × 10(10) Jones, respectively, at low V(DS) = -10 V and V(G) = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm(-2). By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector. PMID:26963474

  15. Influence of the active layer nanomorphology on device performance for ternary PbS x Se1-x quantum dots based solution-processed infrared photodetector

    NASA Astrophysics Data System (ADS)

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-01

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS x Se1-x quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS x Se1-x quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS x Se1-x QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = MP3HT:MQDs) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W-1 and 1.02 × 1010 Jones, respectively, at low V DS = -10 V and V G = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm-2. By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector.

  16. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  17. Organic photovoltaic device with interfacial layer and method of fabricating same

    SciTech Connect

    Marks, Tobin J.; Hains, Alexander W.

    2013-03-19

    An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5'-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2'-bithiophene (PABTSi.sub.2).

  18. Highly efficient hybrid light-emitting device using complex of CdSe/ZnS quantum dots embedded in co-polymer as an active layer.

    PubMed

    Kang, Byoung-Ho; Seo, Jun-Seon; Jeong, Sohee; Lee, Jihye; Han, Chang-Soo; Kim, Do-Eok; Kim, Kyu-Jin; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kim, Hak-Rin; Kang, Shin-Won

    2010-08-16

    We propose a highly efficient hybrid light-emitting device (LED) with a single active layer where CdSe/ZnS quantum dots (QDs) are dispersed as a guest material in a conjugated polymer (co-polymer) matrix used for a host material. In our structure, the QDs act on light-emitting chromophores by trapping the migrating excitons in the co-polymer matrix via Förster energy transfer, and improve the charge balance within the co-polymer by trapping the injected electron carriers. Experimental results show that the electroluminescent properties highly depend on the doping density of the QDs within the co-polymer matrix, where the luminance as well as the external current efficiency are initially enhanced with increasing the concentration of the dispersed QDs in the co-polymer solution, and then such properties are degraded due to aggregation of the QDs. We can get the maximum brightness of 9,088 cd/m(2) and the maximum external current efficiency of 7.5 cd/A in mixing ratio of the QDs by 1.0 wt%. The external current efficiency is enhanced by over 15 times and the turn-on voltage is reduced in comparison with the corresponding values for a reference device that uses only a co-polymer as an active layer. PMID:20721223

  19. Improved insulator layer for MIS devices

    NASA Technical Reports Server (NTRS)

    Miller, W. E.

    1980-01-01

    Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

  20. Boundary layer control device for duct silencers

    NASA Technical Reports Server (NTRS)

    Schmitz, Fredric H. (Inventor); Soderman, Paul T. (Inventor)

    1993-01-01

    A boundary layer control device includes a porous cover plate, an acoustic absorber disposed under the porous cover plate, and a porous flow resistive membrane interposed between the porous cover plate and the acoustic absorber. The porous flow resistive membrane has a flow resistance low enough to permit sound to enter the acoustic absorber and high enough to damp unsteady flow oscillations.

  1. High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.

    PubMed

    Wang, Cheng; Chen, Yu; Zhang, Bin; Liu, Shanshan; Chen, Qibin; Cao, Yaming; Sun, Sai

    2016-01-14

    A solution-processed organometallic halide perovskite-based bulk heterojunction (BHJ) memory device with a configuration of indium-doped tin oxide (ITO)/CH3NH3PbI3:PVK/Al has been successfully fabricated. Under a threshold voltage of -1.57 V, this device shows a nonvolatile write-once read-many-times (WORM) memory effect, with a maximum ON/OFF current ratio exceeding 10(3). In contrast, the ITO/CH3NH3PbI3/Al device showed only conductor characteristics, while the PVK-based device exhibited insulator behavior. Upon being subjected to voltages, an interesting filamentary nature of the CH3NH3PbI3:PVK film was also observed in situ at the microscopic nanometer level using a conductive atomic force microscopy (C-AFM) technique with a device configuration of Si/Pt/CH3NH3PbI3:PVK/Pt. The mechanism associated with the memory effect is discussed. The electric-field-induced intermolecular charge transfer effect between CH3NH3PbI3 and PVK, and the possible conformational ordering of the PVK side-chains/backbone under an applied bias voltage, may cause the electrical conductivity switching and WORM effect in the reported BHJ device. PMID:26645358

  2. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  3. Three dimensional finite element modeling and characterization of intermediate states in single active layer phase change memory devices

    NASA Astrophysics Data System (ADS)

    Cinar, I.; Aslan, O. B.; Gokce, A.; Dincer, O.; Karakas, V.; Stipe, B.; Katine, J. A.; Aktas, G.; Ozatay, O.

    2015-06-01

    The high contrast in the electrical resistivity between amorphous and crystalline states of a phase change material can potentially enable multiple memory levels for efficient use of a data storage medium. We report on our investigation of the role of the current injection site geometry (circular and square) in stabilizing such intermediate states within a nanoscale single-phase change material system (Ge2Sb2Te5). We have developed a three dimensional multiphysics model, which includes phase change kinetics, electrical, thermal, thermoelectric, and percolation effects, all as a function of temperature, using an iterative approach with coupled differential equations. Our model suggests that the physical origin of the formation of stable intermediate states in square top contact devices is mainly due to anisotropic heating during the application of a programming current pulse. Furthermore, the threshold current requirement and the width of the programming window are determined by crystallite nucleation and growth rates such that a higher crystallization rate leads to a narrower range of current pulses for switching to intermediate resistance level(s). The experimentally determined resistance maps, those that are indicative of the crystallinity, show good agreement with the simulated phase change behavior confirming the existence of stable intermediate states. Our model successfully predicts the required programming conditions for such mixed-phase levels, which can be used to optimize memory cells for future ultra-high density data storage applications.

  4. SNS Devices With Pinhole-Defined Active Regions

    NASA Technical Reports Server (NTRS)

    Hunt, Brian D.; Barner, Jeffrey B.

    1996-01-01

    Superconductor/normal conductor/superconductor (SNS) microbridge devices with pinhole-defined active regions undergoing development. Device includes thin, electrically insulating layer deposited epitaxially, with controlled formation of pinholes, on one of two superconducting layers. Normally conducting metal deposited epitaxially in pinholes and on insulating layer, forming electrical contact between two superconducting layers. Junction resistances and maximum junction voltages expected to be increased.

  5. Encapsulation methods and dielectric layers for organic electrical devices

    DOEpatents

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  6. Polyaniline-based organic memristive device fabricated by layer-by-layer deposition technique

    NASA Astrophysics Data System (ADS)

    Erokhina, Svetlana; Sorokin, Vladimir; Erokhin, Victor

    2015-09-01

    Memristors and memristive devices represent a splendid area of research due to the unique possibilities for the realization of new types of computer hardware elements and mimicking several essential properties of the nervous system of living beings. The organic memristive device was developed as an electronic single-device analogue of the synapse, suitable for the realization of circuits allowing Hebbian type of learning. This work is dedicated to the realization of the active channel of organic memristive devices by polyelectrolyte self-assembling (layer-by-layer technique). Stable and reproducible electrical characteristics of the device were obtained when the thickness of the active channel was more than seven bilayers. The device revealed rectifying behaviour and the presence of hysteresis—important properties for the realization of neuromorphic systems with synapse-like properties of the individual elements. Compared to previously reported results on organic memristive devices fabricated using other methods, the present device does not require any additional doping that is usually performed through acid treatment. Such a behaviour is extremely important for the cases in which biological systems (nervous cells, slime mould, etc.) must be interfaced with the system of organic memristive devices, since acid treatment can kill living beings. [Figure not available: see fulltext.

  7. Organic light emitting device having multiple separate emissive layers

    SciTech Connect

    Forrest, Stephen R.

    2012-03-27

    An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

  8. Optical and electrical properties of bi-layers organic devices

    NASA Astrophysics Data System (ADS)

    Trad, Hager; Rouis, Ahlem; Davenas, Jöel; Majdoub, Mustapha

    2014-10-01

    The influence of interfacial charges on the device characteristics of bi-layers structure LEDs with poly[5-methoxy-2-octyloxy-1,4-phenylenevinylene] (MO-PPV) as active polymer layer is investigated. The concept to improve device performance is presented using: a diacetate cellulose (DAC) and a new synthetized 5-{2-(2-chloroethoxy)ethoxy}-2-{(E)-(2-pyridyl)azo}phenol (PDEG) components. The DAC and mixed (DAC+PDEG) layers were inserted between indium tin oxide (ITO) and MO-PPV polymer. The optical properties (UV-Vis) of MO-PPV, PDEG and mixed (DAC+PDEG) in solutions were studied and compared to those on thin films. Detailed current-voltage measurements of the bi-layers devices showed improvements of the threshold voltage (Vth) of the ITO/(DAC+PDEG)/MO-PPV/Al device attributed to the enhancement of carriers injection and transport resulted from the modified electrode structures. Conduction mechanisms of structure LEDs were matched with space-charge-limited current (SCLC) one. The impedance spectra for all devices can be discussed in terms of an equivalent circuit model designed as a parallel resistor Rp and capacitor Cp network in series with resistor Rs. The ITO/(DAC+PDEG)/MO-PPV/Al device showed the lowest impedance attributed to the removal of contaminants and to changes in the work function of ITO. The frequency-dependent electrical properties of the ITO/(DAC+PDEG)/MO-PPV/Al structure is analyzed by impedance spectroscopy as function of bias. We have extracted numerical values of the equivalent circuit model parameters by fitting experimental data. Their evolution with bias voltages has shown that the SCLC mechanism is characterized by an exponential trap distribution.

  9. Active multistable twisting device

    NASA Technical Reports Server (NTRS)

    Schultz, Marc R. (Inventor)

    2008-01-01

    Two similarly shaped, such as rectangular, shells are attached to one another such that they form a resulting thin airfoil-like structure. The resulting device has at least two stable equilibrium shapes. The device can be transformed from one shape to another with a snap-through action. One or more actuators can be used to effect the snap-through; i.e., transform the device from one stable shape to another. Power to the actuators is needed only to transform the device from one shape to another.

  10. Remanagement of Singlet and Triplet Excitons in Single-Emissive-Layer Hybrid White Organic Light-Emitting Devices Using Thermally Activated Delayed Fluorescent Blue Exciplex.

    PubMed

    Liu, Xiao-Ke; Chen, Zhan; Qing, Jian; Zhang, Wen-Jun; Wu, Bo; Tam, Hoi Lam; Zhu, Furong; Zhang, Xiao-Hong; Lee, Chun-Sing

    2015-11-25

    A high-performance hybrid white organic light-emitting device (WOLED) is demonstrated based on an efficient novel thermally activated delayed fluorescence (TADF) blue exciplex system. This device shows a low turn-on voltage of 2.5 V and maximum forward-viewing external quantum efficiency of 25.5%, which opens a new avenue for achieving high-performance hybrid WOLEDs with simple structures. PMID:26436730

  11. Organic electrophosphorescence device having interfacial layers

    DOEpatents

    Choulis, Stelios A.; Mathai, Mathew; Choong, Vi-En; So, Franky

    2010-08-10

    Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

  12. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2016-07-05

    A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent.

  13. Active Metal-Insulator-Metal Plasmonic Devices

    NASA Astrophysics Data System (ADS)

    Diest, Kenneth Alexander

    As the field of photonics constantly strives for ever smaller devices, the diffraction limit of light emerges as a fundamental limitation in this pursuit. A growing number of applications for optical "systems on a chip" have inspired new ways of circumventing this issue. One such solution to this problem is active plasmonics. Active plasmonics is an emerging field that enables light compression into nano-structures based on plasmon resonances at a metal-dielectric interface and active modulation of these plasmons with an applied external field. One area of active plasmonics has focused on replacing the dielectric layer in these waveguides with an electro-optic material and designing the resulting structures in such a way that the transmitted light can be modulated. These structures can be utilized to design a wide range of devices including optical logic gates, modulators, and filters. This thesis focuses on replacing the dielectric layer within a metal-insulator-metal plasmonic waveguide with a range of electrically active materials. By applying an electric field between the metal layers, we take advantage of the electro-optic effect in lithium niobate, and modulating the carrier density distribution across the structure in n-type silicon and indium tin oxide. The first part of this thesis looks at fabricating metal-insulator-metal waveguides with ion-implantation induced layer transferred lithium niobate. The process is analyzed from a thermodynamic standpoint and the ion-implantation conditions required for layer transfer are determined. The possible failure mechanisms that can occur during this process are analyzed from a thin-film mechanics standpoint, and a metal-bonding method to improve successful layer transfer is proposed and analyzed. Finally, these devices are shown to naturally filter white light into individual colors based on the interference of the different optical modes within the dielectric layer. Full-field electromagnetic simulations show that

  14. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  15. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  16. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  17. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  18. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  19. Atomic layer deposited aluminum oxide and Parylene C bi-layer encapsulation for biomedical implantable devices

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong

    Biomedical implantable devices have been developed for both research and clinical applications, to stimulate and record physiological signals in vivo. Chronic use of biomedical devices with thin-film-based encapsulation in large scale is impeded by their lack of long-term functionality and stability. Biostable, biocompatible, conformal, and electrically insulating coatings that sustain chronic implantation are essential for chip-scale implantable electronic systems. Even though many materials have been studied to for this purpose, to date, no encapsulation method has been thoroughly characterized or qualified as a broadly applicable long-term hermetic encapsulation for biomedical implantable devices. In this work, atomic layer deposited Al2O3 and Parylene C bi-layer was investigated as encapsulation for biomedical devices. The combination of ALD Al2O3 and CVD Parylene C encapsulation extended the lifetime of coated interdigitated electrodes (IDEs) to up to 72 months (to date) with low leakage current of ~ 15 pA. The long lifetime was achieved by significantly reducing moisture permeation due to the ALD Al2O3 layer. Moreover, the bi-layer encapsulation separates the permeated moisture (mostly at the Al2O3 and Parylene interface) from the surface contaminants (mostly at the device and Al 2O3 interface), preventing the formation of localized electrolyte through condensation. Al2O3 works as an inner moisture barrier and Parylene works as an external ion barrier, preventing contact of Al2O3 with liquid water, and slowing the kinetics of alumina corrosion. Selective removal of encapsulation materials is required to expose the active sites for interacting with physiological environment. A self-aligned mask process with three steps was developed to expose active sites, composed of laser ablation, oxygen plasma etching, and BOE etching. Al2O 3 layer was found to prevent the formation of microcracks in the iridium oxide film during laser ablation. Bi-layer encapsulated

  20. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  1. Dual control active superconductive devices

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1993-07-20

    A superconducting active device has dual control inputs and is constructed such that the output of the device is effectively a linear mix of the two input signals. The device is formed of a film of superconducting material on a substrate and has two main conduction channels, each of which includes a weak link region. A first control line extends adjacent to the weak link region in the first channel and a second control line extends adjacent to the weak link region in the second channel. The current flowing from the first channel flows through an internal control line which is also adjacent to the weak link region of the second channel. The weak link regions comprise small links of superconductor, separated by voids, through which the current flows in each channel. Current passed through the control lines causes magnetic flux vortices which propagate across the weak link regions and control the resistance of these regions. The output of the device taken across the input to the main channels and the output of the second main channel and the internal control line will constitute essentially a linear mix of the two input signals imposed on the two control lines. The device is especially suited to microwave applications since it has very low input capacitance, and is well suited to being formed of high temperature superconducting materials since all of the structures may be formed coplanar with one another on a substrate.

  2. An Innovative Flow-Measuring Device: Thermocouple Boundary Layer Rake

    NASA Technical Reports Server (NTRS)

    Hwang, Danny P.; Fralick, Gustave C.; Martin, Lisa C.; Wrbanek, John D.; Blaha, Charles A.

    2001-01-01

    An innovative flow-measuring device, a thermocouple boundary layer rake, was developed. The sensor detects the flow by using a thin-film thermocouple (TC) array to measure the temperature difference across a heater strip. The heater and TC arrays are microfabricated on a constant-thickness quartz strut with low heat conductivity. The device can measure the velocity profile well into the boundary layer, about 65 gm from the surface, which is almost four times closer to the surface than has been possible with the previously used total pressure tube.

  3. CRISPR transcriptional repression devices and layered circuits in mammalian cells

    PubMed Central

    Kiani, Samira; Beal, Jacob; Ebrahimkhani, Mohammad R; Huh, Jin; Hall, Richard N; Xie, Zhen; Li, Yinqing; Weiss, Ron

    2014-01-01

    A key obstacle to creating sophisticated genetic circuits has been the lack of scalable device libraries. Here we present a modular transcriptional repression architecture based on clustered regularly interspaced palindromic repeats (CRISPR) system and examine approaches for regulated expression of guide RNAs in human cells. Subsequently we demonstrate that CRISPR regulatory devices can be layered to create functional cascaded circuits, which provide a valuable toolbox for engineering purposes. PMID:24797424

  4. CRISPR transcriptional repression devices and layered circuits in mammalian cells.

    PubMed

    Kiani, Samira; Beal, Jacob; Ebrahimkhani, Mohammad R; Huh, Jin; Hall, Richard N; Xie, Zhen; Li, Yinqing; Weiss, Ron

    2014-07-01

    A key obstacle to creating sophisticated genetic circuits has been the lack of scalable device libraries. Here we present a modular transcriptional repression architecture based on clustered regularly interspaced palindromic repeats (CRISPR) system and examine approaches for regulated expression of guide RNAs in human cells. Subsequently we demonstrate that CRISPR regulatory devices can be layered to create functional cascaded circuits, which provide a valuable toolbox for engineering purposes. PMID:24797424

  5. Photovoltaic device comprising compositionally graded intrinsic photoactive layer

    DOEpatents

    Hoffbauer, Mark A; Williamson, Todd L

    2013-04-30

    Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In.sub.1-xA.sub.xN,; wherein: i. 0.ltoreq.x.ltoreq.1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600.degree. C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.0 eV, and wherein the intrinsic photoactive layer is grown at a rate of from about 5 nm/min to about 100 nm/min.

  6. SU-8 Guiding Layer for Love Wave Devices

    PubMed Central

    Roach, Paul; Atherton, Shaun; Doy, Nicola; McHale, Glen; Newton, Michael I.

    2007-01-01

    SU-8 is a technologically important photoresist used extensively for the fabrication of microfluidics and MEMS, allowing high aspect ratio structures to be produced. In this work we report the use of SU-8 as a Love wave sensor guiding layer which allows the possibility of integrating a guiding layer with flow cell during fabrication. Devices were fabricated on ST-cut quartz substrates with a single-single finger design such that a surface skimming bulk wave (SSBW) at 97.4 MHz was excited. SU-8 polymer layers were successively built up by spin coating and spectra recorded at each stage; showing a frequency decrease with increasing guiding layer thickness. The insertion loss and frequency dependence as a function of guiding layer thickness was investigated over the first Love wave mode. Mass loading sensitivity of the resultant Love wave devices was investigated by deposition of multiple gold layers. Liquid sensing using these devices was also demonstrated; water-glycerol mixtures were used to demonstrate sensing of density-viscosity and the physical adsorption and removal of protein was also assessed using albumin and fibrinogen as model proteins.

  7. Inverted organic photovoltaic device with a new electron transport layer

    PubMed Central

    2014-01-01

    We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air. PMID:24674457

  8. Layer-by-layer Collagen Deposition in Microfluidic Devices for Microtissue Stabilization.

    PubMed

    McCarty, William J; Prodanov, Ljupcho; Bale, Shyam Sundhar; Bhushan, Abhinav; Jindal, Rohit; Yarmush, Martin L; Usta, O Berk

    2015-01-01

    Although microfluidics provides exquisite control of the cellular microenvironment, culturing cells within microfluidic devices can be challenging. 3D culture of cells in collagen type I gels helps to stabilize cell morphology and function, which is necessary for creating microfluidic tissue models in microdevices. Translating traditional 3D culture techniques for tissue culture plates to microfluidic devices is often difficult because of the limited channel dimensions. In this method, we describe a technique for modifying native type I collagen to generate polycationic and polyanionic collagen solutions that can be used with layer-by-layer deposition to create ultrathin collagen assemblies on top of cells cultured in microfluidic devices. These thin collagen layers stabilize cell morphology and function, as shown using primary hepatocytes as an example cell, allowing for the long term culture of microtissues in microfluidic devices. PMID:26485274

  9. Gas sensors based on silicon devices with a porous layer

    NASA Astrophysics Data System (ADS)

    Barillaro, G.; Diligenti, A.; Nannini, A.; Strambini, L. M.

    2005-06-01

    In this work two silicon devices, that is a FET and a p crystalline silicon resistor having porous silicon as adsorbing layer are presented as gas sensors. Owing to they are easily integrable with silicon electronics, these devices could represent an improvement of the functionality of silicon for sensor applications. Unlike other porous silicon-based sensors, in this case the sensing variable is a current flowing in the crystalline silicon, so that the porous silicon film has only the function of adsorbing layer and its properties, electrical or optical, are not directly involved in the measurement. The fabrication processes and an electrical characterization in presence of isopropanol vapors are presented and discussed for both devices.

  10. Analysis of Charge Carrier Transport in Organic Photovoltaic Active Layers

    NASA Astrophysics Data System (ADS)

    Han, Xu; Maroudas, Dimitrios

    2015-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological, deterministic charge carrier transport models. The models describe free electron and hole transport, trapping, and detrapping, as well as geminate charge-pair dissociation and geminate and bimolecular recombination, self-consistently with Poisson's equation for the electric field in the active layer. We predict photocurrent evolution in devices with active layers of P3HT, P3HT/PMMA, and P3HT/PS, as well as P3HT/PCBM blends, and photocurrent-voltage (I-V) relations in these devices at steady state. Charge generation propensity, zero-field charge mobilities, and trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental measurements. We have analyzed effects of the active layer morphology for layers consisting of both pristine drop-cast films and of nanoparticle (NP) assemblies, as well as effects on device performance of insulating NP doping in conducting polymers and of specially designed interlayers placed between an electrode and the active layer. The model predictions provide valuable input toward synthesis of active layers with prescribed morphology that optimize OPV device performance.

  11. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOEpatents

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  12. Tunable Photonic Devices in Ferroelectric-Based Layered Structures

    NASA Astrophysics Data System (ADS)

    Xin, Jianzhuo

    This thesis presents the studies on the optical properties of perovskite ferroelectric thin films, as well as the preparation and applications of ferroelectrics in tunable photonic devices. Ba(Zr,Ti)O3 (BZT) thin films with different Zr concentration were grown on MgO substrates by pulsed laser deposition, and their structural and optical properties in the visible range were systematically characterized, including the out-of-plane lattice constant, grain size, refractive index, optical band gap energy, electro-optic coefficient, optical loss and absorption coefficient. The obtained results provide information for the design of BZT thin film-based optical devices. One-dimensional photonic crystal filter working in the terahertz (THz) range was studied. The transmission properties of SrTiO3 (STO) crystals were first characterized by THz time-domain spectroscopy. Si/STO multilayers with different STO defect thicknesses were designed by the transfer matrix method and then constructed by polishing and stacking. The shift of defect mode was observed and comparable with the calculations. Two-dimensional photonic structures in the optical and infra-red range were then attempted. A combination of nanoimprint lithography and inductively coupled plasma etching were investigated on (Ba,Sr)TiO3 thin films. Then, in order to simplify the nanoimprint process and allow thick metal sacrificial layer deposition for high aspect-ratio etching, a transfer imprint lithography technique was developed. Finally, surface plasmon resonance (SPR) tuning via thermally-induced refractive index changes in ferroelectrics was investigated. Ag stripes with periodicity 750 nm were fabricated on flat BST surface by nanoimprint lithography and subsequent lift-off. (-1), (2) and (-2) SP modes from Ag/BST interface were observed in visible range. Red shift of the modes up to 3.9 nm was obtained with increasing temperature. Then continuous Au film on corrugated BST surface with periodicity of 1 mum was

  13. White electrophosphorescent devices based on tricolour emissive layers

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Hua, Yulin; Wu, Xiaoming; Zhang, Guohui; Hui, Juanli; Zhang, Lijuan; Liu, Qian; Ma, Liang; Yin, Shougen; Petty, M. C.

    2008-01-01

    We demonstrate high efficiency, white organic light-emitting devices based on a structure using multiple emissive layers and fabricated without a hole-injecting layer. 2,5,8,11-tetra-tertbutylperylene (TBPe) was used as the blue fluorescent layer and the overall device configuration was indium tin oxide (ITO)/N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/4,4'-N, N'-dicarbazole-biphenyl (CBP): bis[1-(phenyl)isoquinoline] iridium (III) acetylanetonate [Ir(piq)2(acac)]/CBP:fac-tris(2-phenylpyridine) iridium [Ir(ppy)3]/CBP: TBPe/2, 9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/(8-hydroxyquinoline) aluminium (Alq3)/LiF/Al. This structure possessed a maximum luminous efficiency of 14.2 cd A-1 at a current density of 4 mA cm-2 and a maximum brightness of 40 520 cd m-2 at 25 V. The Commission Internationale de L'Eclairage coordinates changed only from (0.27, 0.38) to (0.33, 0.38), with the brightness varying from 100 to 25 640 cd m-2, as the applied voltage was increased from 10 to 23 V.

  14. Multi-layer electrode for high contrast electrochromic devices

    SciTech Connect

    Schwendeman, Irina G.; Finley, James J.; Polcyn, Adam D.; Boykin, Cheri M.

    2011-11-01

    An electrochromic device includes a first substrate spaced from a second substrate. A first transparent conductive electrode is formed over at least a portion of the first substrate. A polymeric anode is formed over at least a portion of the first conductive electrode. A second transparent conductive electrode is formed over at least a portion of the second substrate. In one aspect of the invention, a multi-layer polymeric cathode is formed over at least a portion of the second conductive electrode. In one non-limiting embodiment, the multi-layer cathode includes a first cathodically coloring polymer formed over at least a portion of the second conductive electrode and a second cathodically coloring polymer formed over at least a portion of the first cathodically coloring polymer. An ionic liquid is positioned between the anode and the cathode.

  15. Multilayer thin films employing electrostatic layer-by- layer self-assembly for optical device applications

    NASA Astrophysics Data System (ADS)

    Lee, Soo-Hyoung

    2000-11-01

    This thesis research focuses on the fabrication of novel multilayer thin films with unique optical properties employing molecular level self-assembly. Two different classes of polymers, azo and fluorescent polymers, have been synthesized and used for fabrication of optical devices, specifically thin film nonlinear optical devices and optical chemical sensors by electrostatic layer-by- layer self-assembly. For thin film nonlinear optical devices, a poly(acrylic acid) based precursor anilino-functional polymer was first synthesized and used as a polyanion. This polymer was assembled into mono and multilayer thin films by electrostatic layer-by-layer self-assembly technique in conjunction with a polycation. The aniline group in the assembled polymer layer was subsequently converted to an azobenzene chromophore by post azo coupling reaction with appropriate diazonium salts. This method provides easy control of film thickness and well ordered chromophore structure in the multilayer. Second harmonic generation was observed in all multilayer films indicating acentric organization of the chromophores synthesized in the multilayered films. The second harmonic intensity and film thickness are dependent on the assembly conditions (pH etc.) of the polyions. The post functionalized azopolymer layers were further modulated by light driven mass transport. Thin film optical sensors for pH, metal ions (ferric and mercury) and 2,4-dinitro toluene detection were developed. To fabricate the pH sensor, a fluorescent molecule, 1-hydroxypyren-3,6,8-trisulfonate, was assembled with a polycation by electrostatic layer-by- layer self-assembly technique. The fluorescent indicator molecule exhibits distinct and well-defined emission peaks for protonated and deprotonated forms. The relative peak positions and intensity of fluorescence of the protonated and deprotonated forms change in response to pH variations. For metal ions (ferric and mercury) and 2,4-dinitro toluene sensing, the indicator

  16. Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer Stability.

    PubMed

    Bag, Monojit; Renna, Lawrence A; Adhikari, Ramesh Y; Karak, Supravat; Liu, Feng; Lahti, Paul M; Russell, Thomas P; Tuominen, Mark T; Venkataraman, D

    2015-10-14

    Solar cells fabricated using alkyl ammonium metal halides as light absorbers have the right combination of high power conversion efficiency and ease of fabrication to realize inexpensive but efficient thin film solar cells. However, they degrade under prolonged exposure to sunlight. Herein, we show that this degradation is quasi-reversible, and that it can be greatly lessened by simple modifications of the solar cell operating conditions. We studied perovskite devices using electrochemical impedance spectroscopy (EIS) with methylammonium (MA)-, formamidinium (FA)-, and MA(x)FA(1-x) lead triiodide as active layers. From variable temperature EIS studies, we found that the diffusion coefficient using MA ions was greater than when using FA ions. Structural studies using powder X-ray diffraction (PXRD) show that for MAPbI3 a structural change and lattice expansion occurs at device operating temperatures. On the basis of EIS and PXRD studies, we postulate that in MAPbI3 the predominant mechanism of accelerated device degradation under sunlight involves thermally activated fast ion transport coupled with a lattice-expanding phase transition, both of which are facilitated by absorption of the infrared component of the solar spectrum. Using these findings, we show that the devices show greatly improved operation lifetimes and stability under white-light emitting diodes, or under a solar simulator with an infrared cutoff filter or with cooling. PMID:26414066

  17. Modal Rayleigh-like streaming in layered acoustofluidic devices

    NASA Astrophysics Data System (ADS)

    Lei, Junjun; Glynne-Jones, Peter; Hill, Martyn

    2016-01-01

    Classical Rayleigh streaming is well known and can be modelled using Nyborg's limiting velocity method as driven by fluid velocities adjacent to the walls parallel to the axis of the main acoustic resonance. We have demonstrated previously the existence and the mechanism of four-quadrant transducer plane streaming patterns in thin-layered acoustofluidic devices which are driven by the limiting velocities on the walls perpendicular to the axis of the main acoustic propagation. We have recently found experimentally that there is a third case which resembles Rayleigh streaming but is a more complex pattern related to three-dimensional cavity modes of an enclosure. This streaming has vortex sizes related to the effective wavelength in each cavity axis of the modes which can be much larger than those found in the one-dimensional case with Rayleigh streaming. We will call this here modal Rayleigh-like streaming and show that it can be important in layered acoustofluidic manipulation devices. This paper seeks to establish the conditions under which each of these is dominant and shows how the limiting velocity field for each relates to different parts of the complex acoustic intensity patterns at the driving boundaries.

  18. Ultra-thin layer packaging for implantable electronic devices

    NASA Astrophysics Data System (ADS)

    Hogg, A.; Aellen, T.; Uhl, S.; Graf, B.; Keppner, H.; Tardy, Y.; Burger, J.

    2013-07-01

    State of the art packaging for long-term implantable electronic devices generally uses reliable metal and glass housings; however, these are limited in the miniaturization potential and cost reduction. This paper focuses on the development of biocompatible hermetic thin-film packaging based on poly-para-xylylene (Parylene-C) and silicon oxide (SiOx) multilayers for smart implantable microelectromechanical systems (MEMS) devices. For the fabrication, a combined Parylene/SiOx single-chamber deposition system was developed. Topological aspects of multilayers were characterized by atomic force microscopy and scanning electron microscopy. Material compositions and layer interfaces were analyzed by Fourier transform infrared spectrometry and x-ray photoelectron spectroscopy. To evaluate the multilayer corrosion protection, water vapor permeation was investigated using a calcium mirror test. The calcium mirror test shows very low water permeation rates of 2 × 10-3 g m-2 day-1 (23 °C, 45% RH) for a 4.7 µm multilayer, which is equivalent to a 1.9 mm pure Parylene-C coating. According to the packaging standard MIL-STD-883, the helium gas tightness was investigated. These helium permeation measurements predict that a multilayer of 10 µm achieves the hermeticity acceptance criterion required for long-term implantable medical devices.

  19. Active plasmonic devices via electron spin.

    PubMed

    Baron, C A; Elezzabi, A Y

    2009-04-27

    A class of active terahertz devices that operate via particle plasmon oscillations is introduced for ensembles consisting of ferromagnetic and dielectric micro-particles. By utilizing an interplay between spin-orbit interaction manifesting as anisotropic magnetoresistance and the optical distance between ferromagnetic particles, a multifaceted paradigm for device design is demonstrated. Here, the phase accumulation of terahertz radiation across the device is actively modulated via the application of an external magnetic field. An active plasmonic directional router and an active plasmonic cylindrical lens are theoretically explored using both an empirical approach and finite-difference time-domain calculations. These findings are experimentally supported. PMID:19399088

  20. Ultrafast switching of an electrochromic device based on layered double hydroxide/Prussian blue multilayered films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoxi; Zhou, Awu; Dou, Yibo; Pan, Ting; Shao, Mingfei; Han, Jingbin; Wei, Min

    2015-10-01

    Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K+ ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH/PB)n-ITO/0.1 M KCl electrolyte/ITO sandwich structure displays superior response properties (0.91/1.21 s for coloration/bleaching), a comparable coloration efficiency (68 cm2 C-1) and satisfactory optical contrast (45% at 700 nm), in comparison with other inorganic material-based ECDs reported previously. Therefore, this work presents a facile and cost-effective strategy to immobilize electrochemically active nanoparticles in a 2D inorganic matrix for potential application in displays, smart windows and optoelectronic devices.Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K+ ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH

  1. Drag reducing outer-layer devices in rough wall turbulent boundary layers

    NASA Technical Reports Server (NTRS)

    Bandyopadhyay, P. R.

    1986-01-01

    The ability of outer-layer devices to reduce wall shear stress over a substantial streamwise distance in rough-wall turbulent boundary layers has been studied experimentally. The devices examined are a pair of thin flat ribbons placed in tandem as well as those having symmetric airfoil sections. The wall conditions examined are smooth, d- and k-type transverse-groove and sandgrain roughnesses. The wall drag is found to be reduced from the respective normal levels in all rough walls. All k-type rough walls exhibit a similar level of relative wall drag reduction which is also smaller than that in a smooth-wall. The d-type rough walls exhibit a transitional behaviour - the relative wall drag reduction drops from the smooth wall level to that of the k-type roughness with increasing roughness Reynolds number. However, the absolute reductions in the local wall shear stress are similar in both the rough and smooth walls. On the other hand, the relative reductions are lower in the rough walls because of a higher reference drag which is caused by the unique presence of a pressure component on which the devices are not as effective.

  2. [Remote monitoring of active implantable medical device].

    PubMed

    Zhang, Yujing

    2013-09-01

    Active implantable medical device develops rapidly in recent years. The clinical demands and current application are introduced, the technical trends are discussed, and the safety risks are analyzed in this paper. PMID:24409793

  3. GaAs Semi-Insulating Layer for a GaAs Device

    NASA Technical Reports Server (NTRS)

    Sherrill, G.; Mattauch, R. J.

    1986-01-01

    Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

  4. High efficiency electrophosphorescent red organic light-emitting devices with double-emission layers

    NASA Astrophysics Data System (ADS)

    Xie, Wenfa; Zhao, Yi; Li, Chuannan; Liu, Shiyong

    2007-08-01

    High efficiency electrophosphorescent red organic light-emitting devices with double-emission layers (DELs) have been fabricated with a changing of the hole blocking layer. Bis(1-(phenyl)isoquinoline) iridium (III) acetylanetonate [Ir(piq) 2(acac)] as the red emitting dopant is doped into both 4,4'-bis( N-carbazolyl)biphenyl (CBP) host and hole blocking layers. The DELs devices show significantly improved efficiency compared to the conventional devices with a single emitting layer. The maximum power efficiency of 4.05 lm/W at 5 V, which is about 25% greater than that of the device with a single emitting layer, is obtained in a device with 2,2',2″-(1,3,5-phenylene) tris(1-phenyl-1 H-benzimidazole) (TPBI) as hole blocking layer. We attribute it to the excitons-collected effect of the doped TPBI layer and the excellent electron transport performance of TPBI.

  5. Melanin as an active layer in biosensors

    SciTech Connect

    Piacenti da Silva, Marina Congiu, Mirko Oliveira Graeff, Carlos Frederico de; Fernandes, Jéssica Colnaghi Biziak de Figueiredo, Natália Mulato, Marcelo

    2014-03-15

    The development of pH sensors is of great interest due to its extensive application in several areas such as industrial processes, biochemistry and particularly medical diagnostics. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on melanin thin films as active layer are investigated and the physical mechanisms related to the device operation are discussed. Thin films were produced from different melanin precursors on indium tin oxide (ITO) and gold substrates and were investigated by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy. Experiments were performed in the pH range from 2 to 12. EGFETs with melanin deposited on ITO and on gold substrates showed sensitivities ranging from 31.3 mV/pH to 48.9 mV/pH, depending on the melanin precursor and the substrate used. The pH detection is associated with specific binding sites in its structure, hydroxyl groups and quinone imine.

  6. Melanin as an active layer in biosensors

    NASA Astrophysics Data System (ADS)

    Piacenti da Silva, Marina; Fernandes, Jéssica Colnaghi; de Figueiredo, Natália Biziak; Congiu, Mirko; Mulato, Marcelo; de Oliveira Graeff, Carlos Frederico

    2014-03-01

    The development of pH sensors is of great interest due to its extensive application in several areas such as industrial processes, biochemistry and particularly medical diagnostics. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on melanin thin films as active layer are investigated and the physical mechanisms related to the device operation are discussed. Thin films were produced from different melanin precursors on indium tin oxide (ITO) and gold substrates and were investigated by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy. Experiments were performed in the pH range from 2 to 12. EGFETs with melanin deposited on ITO and on gold substrates showed sensitivities ranging from 31.3 mV/pH to 48.9 mV/pH, depending on the melanin precursor and the substrate used. The pH detection is associated with specific binding sites in its structure, hydroxyl groups and quinone imine.

  7. Optical Enhancement in Optoelectronic Devices Using Refractive Index Grading Layers.

    PubMed

    Lee, Illhwan; Park, Jae Yong; Gim, Seungo; Kim, Kisoo; Cho, Sang-Hwan; Choi, Chung Sock; Song, Seung-Yong; Lee, Jong-Lam

    2016-02-10

    We enhanced the optical transmittance of a multilayer barrier film by inserting a refractive index grading layer (RIGL). The result indicates that the Fresnel reflection, induced by the difference of refractive indices between Si(x)N(y) and SiO2, is reduced by the RIGL. To eliminate the Fresnel reflection while maintaining high transmittance, the optimized design of grading structures with the RIGL was conducted using an optical simulator. With the RIGL, we achieved averaged transmittance in the visible wavelength region by 89.6%. It is found that the optimized grading structure inserting the multilayer barrier film has a higher optical transmittance (89.6%) in the visible region than that of a no grading sample (82.6%). Furthermore, luminance is enhanced by 14.5% (from 10,190 to 11,670 cd m(-2) at 30 mA cm(-2)) when the grading structure is applied to organic light-emitting diodes. Finally, the results offer new opportunities in development of multilayer barrier films, which assist industrialization of very cost-effective flexible organic electronic devices. PMID:26800204

  8. Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

    SciTech Connect

    Ramalingam, Balavinayagam; Zheng, Haisheng; Gangopadhyay, Shubhra

    2014-04-07

    In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.

  9. Pd/Ni-WO3 anodic double layer gasochromic device

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

    2004-04-20

    An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

  10. Theoretical Determination of The Optimum Thickness of Perylene Layer in Bilayer Phthalocyanine/Perylene Photovoltaic Device

    NASA Astrophysics Data System (ADS)

    Pratiwi, Herlina; Siahaan, Timothy; Satriawan, Mirza; Nurwantoro, Pekik; Triyana, Kuwat

    2009-09-01

    We do theoretical study on thickness of the active layers in a heterojunction bilayer thin film photovoltaic device based on copper phthalocyanine (CuPc)/perylene that gives the highest Incident Photon to Current Efficiency (IPCE). The device we study consists Glass (1 mm)/ITO (Indium Tin Oxide, 120 nm)/CuPc (50 nm)/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride, x nm)/Ag (40 nm), where x is the thickness of the PTCDA layer that we calculate here. The calculation is based on assumption that the photocurrent generation process is the result of the creation of photogenerated excitons, which difuse before dissociated at the CuPc/PTCDA interface following the diffusion equation, by internal optical electric field that comes from light exposure. We also assume that almost all photocurrent is created in the CuPc/PTCDA interface. Because the order of the thickness of the active layers is the same or smaller than of the wavelength of visible light, we take into account the effect of reflection and interference in the calculation of internal optical electric field distribution inside the device by making use complex indices of refraction of the active materials in our calculation. The modulus of it is proportional with the number generated excitons. The general solution of the exciton diffusion equation was used for calculating the photocurrent and the IPCE. Here, we find the optimum thickness of PTCDA layer that gives greatest IPCE at the wavelength of 344 nm and 467 nm, which are the wavelengths at which the absorption coefficients of CuPc and PTCDA, respectively, reach the maximum values.

  11. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    SciTech Connect

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  12. Cosmetic devices based on active transdermal technologies.

    PubMed

    Scott, Jessica A; Banga, Ajay K

    2015-09-01

    Active transdermal technology, commonly associated with drug delivery, has been used in recent years by the cosmetic industry for the aesthetic restoration of skin and delivery of cosmetic agents. In this article, we provide an overview of the skin's structure, various skin types, skin's self-repair mechanisms that are stimulated from the usage of cosmetic devices and discuss cosmetic applications. Summaries of the most common active transdermal technologies such as microneedles, iontophoresis, sonophoresis, lasers and microdermabrasion will be provided, in relation to the marketed cosmetic devices available that incorporate these technologies. Lastly, we cover combinations of active technologies that allow for more enhanced cosmetic results, and the current limitations of cosmetic devices. PMID:26389853

  13. Neutronics activities for next generation devices

    SciTech Connect

    Gohar, Y.

    1985-01-01

    Neutronic activities for the next generation devices are the subject of this paper. The main activities include TFCX and FPD blanket/shield studies, neutronic aspects of ETR/INTOR critical issues, and neutronics computational modules for the tokamak system code and tandem mirror reactor system code. Trade-off analyses, optimization studies, design problem investigations and computational models development for reactor parametric studies carried out for these activities are summarized.

  14. Graphene as an efficient interfacial layer for electrochromic devices.

    PubMed

    Lin, Feng; Bult, Justin B; Nanayakkara, Sanjini; Dillon, Anne C; Richards, Ryan M; Blackburn, Jeffrey L; Engtrakul, Chaiwat

    2015-06-01

    This study presents an interfacial modification strategy to improve the performance of electrochromic films that were fabricated by a magnetron sputtering technique. High-quality graphene sheets, synthesized by chemical vapor deposition, were used to modify fluorine-doped tin oxide substrates, followed by the deposition of high-performance nanocomposite nickel oxide electrochromic films. Electrochromic cycling results revealed that a near-complete monolayer graphene interfacial layer improves the electrochromic performance in terms of switching kinetics, activation period, coloration efficiency, and bleached-state transparency, while maintaining ∼100% charge reversibility. The present study offers an alternative route for improving the interfacial properties between electrochromic and transparent conducting oxide films without relying on conventional methods such as nanostructuring or thin film composition control. PMID:25950270

  15. Device physics of single layer organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Crone, B. K.; Campbell, I. H.; Davids, P. S.; Smith, D. L.; Neef, C. J.; Ferraris, J. P.

    1999-11-01

    We present experimental and device model results for electron only, hole only, and bipolar organic light-emitting diodes fabricated using a soluble poly (p-phenylene vinylene) based polymer. Current-voltage (I-V) characteristics were measured for a series of electron only devices in which the polymer thickness was varied. The I-V curves were described using a device model from which the electron mobility parameters were extracted. Similarly, the hole mobility parameters were extracted using a device model description of I-V characteristics for a series of hole only devices where the barrier to hole injection was varied by appropriate choices of hole injecting electrode. The electron and hole mobilities extracted from the single carrier devices are then used, without additional adjustable parameters, to describe the measured current-voltage characteristics of a series of bipolar devices where both the device thickness and contacts were varied. The model successfully describes the I-V characteristics of single carrier and bipolar devices as a function of polymer thickness and for structures that are contact limited, space charge limited, and for cases in between. We find qualitative agreement between the device model and measured external luminance for a thickness series of devices. We investigate the sensitivity of the device model calculations to the magnitude of the bimolecular recombination rate prefactor.

  16. Effect of layered structures on the location of emissive regions in organic electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Aminaka, Ei-ichiro; Tsutsui, Tetsuo; Saito, Shogo

    1996-06-01

    Effect of layered structures on the location of emissive regions was studied in four types of organic electroluminescent (EL) devices: a single-layered (SL) device consisting only of an emissive layer (EML), two types of double-layered (DL-H and DL-E) devices in which a hole-transport layer (HTL) or an electron-transport layer (ETL) is attached to an EML, and a triple-layered (TL) device in which an EML is sandwiched between a HTL and an ETL. As EML, HTL and ETL material, 9, 10-bis[4-(diphenylamino)styryl]anthracene, 4,4'-bis[(3-methylphenyl)phenylamino]biphenyl and 1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl]phenylene, respectively, were used. Within EML layers, a thin sensing layer doped with a squarilium dye, 2,4-bis[4-diethylamino)-2- hydroxyphenyl]cycrobutenediylium-1,3-dioxide was inserted. The change in emission intensity from the dopant, when the location of the sensing layer was systematically varied, gave information on emissive regions in each type of EL device. The emissive region in the SL device extended through the EML, and that in the DL-H device resided near the HTL/EML boundary. On the contrary, those in the DL-E and TL devices were located within a 10-nm-wide region adjacent to the EML/ETL boundary. Moreover, the emission efficiencies of the DL-E and TL devices were found to be higher than those of the SL and DL-H devices. It was experimentally demonstrated that the carrier recombination within the narrow region adjacent to the EML/carrier transport layer boundary gave high emission efficiency.

  17. Buffer layers for REBCO films for use in superconducting devices

    DOEpatents

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  18. Method of producing strained-layer semiconductor devices via subsurface-patterning

    DOEpatents

    Dodson, Brian W.

    1993-01-01

    A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

  19. Polymeric waveguide electro-optic beam-steering device with DNA biopolymer conductive cladding layers

    NASA Astrophysics Data System (ADS)

    Aga, Roberto S.; Ouchen, Fahima; Lesko, Alyssa; Telek, Brian A.; Fehrman Cory, Emily M.; Bartsch, Carrie M.; Lombardi, Jack; Grote, James; Heckman, Emily M.

    2012-11-01

    A polymer electro-optic (EO) waveguide beam-steering device with deoxyribonucleic acid (DNA) biopolymer conductive cladding layers and a core layer of the commercially available EO polymer SEO100 is demonstrated with 100% relative poling efficiency. This demonstration device exhibits a deflection efficiency of 99 mrad/kV with a corresponding in-device EO coefficient r33 of 124 pm/V at 1550 nm. When the DNA biopolymer bottom cladding layer is replaced by the commonly used cladding polymer UV15, the deflection efficiency and in-device r33 drop to 34 mrad/kV and 43 pm/V, respectively.

  20. Resonant tunneling device with two-dimensional quantum well emitter and base layers

    DOEpatents

    Simmons, J.A.; Sherwin, M.E.; Drummond, T.J.; Weckwerth, M.V.

    1998-10-20

    A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation. 43 figs.

  1. Resonant tunneling device with two-dimensional quantum well emitter and base layers

    DOEpatents

    Simmons, Jerry A.; Sherwin, Marc E.; Drummond, Timothy J.; Weckwerth, Mark V.

    1998-01-01

    A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.

  2. Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

    NASA Technical Reports Server (NTRS)

    Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

    1999-01-01

    A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

  3. Permafrost Active Layer Seismic Interferometry Experiment (PALSIE).

    SciTech Connect

    Abbott, Robert; Knox, Hunter Anne; James, Stephanie; Lee, Rebekah; Cole, Chris

    2016-01-01

    We present findings from a novel field experiment conducted at Poker Flat Research Range in Fairbanks, Alaska that was designed to monitor changes in active layer thickness in real time. Results are derived primarily from seismic data streaming from seven Nanometric Trillium Posthole seismometers directly buried in the upper section of the permafrost. The data were evaluated using two analysis methods: Horizontal to Vertical Spectral Ratio (HVSR) and ambient noise seismic interferometry. Results from the HVSR conclusively illustrated the method's effectiveness at determining the active layer's thickness with a single station. Investigations with the multi-station method (ambient noise seismic interferometry) are continuing at the University of Florida and have not yet conclusively determined active layer thickness changes. Further work continues with the Bureau of Land Management (BLM) to determine if the ground based measurements can constrain satellite imagery, which provide measurements on a much larger spatial scale.

  4. Methods for making a multi-layer seal for electrochemical devices

    DOEpatents

    Chou, Yeong-Shyung; Meinhardt, Kerry D.; Stevenson, Jeffry W.

    2007-05-29

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  5. Multi-layer micro/nanofluid devices with bio-nanovalves

    SciTech Connect

    Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

    2013-01-01

    A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

  6. Micro- and Nanostructured Materials for Active Devices and Molecular Electronics

    SciTech Connect

    Martin, Peter M.; Graff, Gordon L.; Gross, Mark E.; Burrows, Paul E.; Bennett, Wendy D.; Mast, Eric S.; Hall, Michael G.; Bonham, Charles C.; Zumhoff, Mac R.; Williford, Rick E.

    2003-10-01

    Traditional single layer barrier coatings are not adequate in preventing degradation of the performance of organic molecular electronic and other active devices. Most advanced devices used in display technology now consist of micro and nanostructured small molecule, polymer and inorganic coatings with thin high reactive group 1A metals. This includes organic electronics such as organic light emitting devices (OLED). The lifetimes of these devices rapidly degrades when they are exposed to atmospheric oxygen and water vapor. Thin film photovoltaics and batteries are also susceptible to degradation by moisture and oxygen. Using in-line coating techniques we apply a composite nanostructured inorganic/polymer thin film barrier that restricts moisture and oxygen permeation to undetectable levels using conventional permeation test equipment. We describe permeation mechanisms for this encapsulation coating and flat panel display and other device applications. Permeation through the multilayer barrier coating is defect and pore limited and can be described by Knudsen diffusion involving a long and tortuous path. Device lifetime is also enhanced by the long lag times required to reach the steady state flux regime. Permeation rates in the range of 10-6 cc,g/m2/d have been achieved and OLED device lifetimes. The structure is robust, yet flexible. The resulting device performance and lifetimes will also be described. The barrier film can be capped with a thin film of transparent conductive oxide yielding an engineered nanostructured device for next generation, rugged, lightweight or flexible displays. This enables, for the first time, thin film encapsulation of emissive organic displays.

  7. Active metameric security devices using an electrochromic material.

    PubMed

    Baloukas, Bill; Lamarre, Jean-Michel; Martinu, Ludvik

    2011-03-20

    In order to increase the anticounterfeiting performance of interference security image structures, we propose to implement an active component using an electrochromic material. This novel device, based on metamerism, offers the possibility of creating various surprising optical effects, it is more challenging to duplicate due to its complexity, and it adds a second level of authentication. By designing optical filters that match the bleached and colored states of the electrochromic device, one can obtain two hidden images-one appearing when the device is tilted, and the other one disappearing when the device is colored under an applied potential. Specifically, we present an example of a filter that is metameric with the colored state of the electrochromic device, demonstrate how the dynamic nature of the device offers more fabrication flexibility, and discuss its performance. We also describe a design methodology for metameric filters based on the luminous efficiency curve of the human eye: this approach results in filters with a lower number of layers and hence lower fabrication costs, and with a lower color difference sensitivity under various illuminants and for nonstandard observers. PMID:21460974

  8. Layer-by-layer nanoencapsulation of camptothecin with improved activity

    PubMed Central

    Parekh, Gaurav; Pattekari, Pravin; Joshi, Chaitanya; Shutava, Tatsiana; DeCoster, Mark; Levchenko, Tatyana; Torchilin, Vladimir; Lvov, Yuri

    2014-01-01

    160 nm nanocapsules containing up to 60% of camptothecin in the core and 7–8 polyelectrolyte bilayers in the shell were produced by washless layer-by-layer assembly of heparin and block-copolymer of poly-L-lysine and polyethylene glycol. The outer surface of the nanocapsules was additionally modified with polyethylene glycol of 5 kDa or 20 kDa molecular weight to attain protein resistant properties, colloidal stability in serum and prolonged release of the drug from the capsules. An advantage of the LbL coated capsules is the preservation of camptothecin lactone form with the shell assembly starting at acidic pH and improved chemical stability of encapsulated drug at neutral and basic pH, especially in the presence of albumin that makes such formulation more active than free camptothecin. LbL nanocapsules preserve the camptothecin lactone form at pH 7.4 resulting in triple activity of the drug toward CRL2303 glioblastoma cell. PMID:24508806

  9. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily activity assist device. (a) Identification....

  10. Active superconducting devices formed of thin films

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1991-05-28

    Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

  11. Microchamber Device for Detection of Transporter Activity of Adherent Cells

    PubMed Central

    Tsugane, Mamiko; Uejima, Etsuko; Suzuki, Hiroaki

    2015-01-01

    We present a method to detect the transporter activity of intact adherent cells using a microchamber device. When adherent cells are seeded onto the poly-di-methyl siloxane substrate having microchambers with openings smaller than the size of a cell, the cells form a confluent layer that covers the microchambers, creating minute, confined spaces. As substances exported across the cell membrane accumulate, transporter activity can be detected by observing the fluorescence intensity increase in the microchamber. We tested the microchamber device with HeLa cells over-expressing MDR1, an ATP-binding cassette transporter, and succeeded in detecting the transport of fluorescence-conjugated paclitaxel, the anti-cancer drug, at the single-cell level. PMID:25853126

  12. Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

    SciTech Connect

    Kim, Jaehwan; Min, Daehong; Jang, Jongjin; Lee, Kyuseung; Chae, Sooryong; Nam, Okhyun

    2014-10-28

    In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

  13. Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

    PubMed Central

    Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

    2013-01-01

    This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

  14. Controllable chemical vapor deposition growth of few layer graphene for electronic devices.

    PubMed

    Wei, Dacheng; Wu, Bin; Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2013-01-15

    Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We

  15. Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices

    PubMed Central

    Lyu, Fei; Liu, Xinfu; Ding, Yinjie; Toh, Eng-Huat; Zhang, Zhenyan; Pan, Yifan; Wang, Zhen; Li, Chengjie; Li, Li; Sha, Jin; Pan, Hongbing

    2016-01-01

    This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points impacting their performance, were characterized using a self-built measurement system. The work analyzes the influences of the aluminum covering on those two aspects of the performance. The aluminum layer covering mainly leads to an eddy-current effect in an unstable magnetic field and an additional depletion region above the active region. Those two points have influences on the sensitivity and the offset voltage, respectively. The analysis guides the designer whether to choose covering with an aluminum layer the active region of the Hall sensor as a method to reduce the flicker noise and to improve the stability of the Hall sensor. Because Hall devices, as a reference element, always suffer from a large dispersion, improving their stability is a crucial issue. PMID:26784199

  16. Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices.

    PubMed

    Lyu, Fei; Liu, Xinfu; Ding, Yinjie; Toh, Eng-Huat; Zhang, Zhenyan; Pan, Yifan; Wang, Zhen; Li, Chengjie; Li, Li; Sha, Jin; Pan, Hongbing

    2016-01-01

    This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points impacting their performance, were characterized using a self-built measurement system. The work analyzes the influences of the aluminum covering on those two aspects of the performance. The aluminum layer covering mainly leads to an eddy-current effect in an unstable magnetic field and an additional depletion region above the active region. Those two points have influences on the sensitivity and the offset voltage, respectively. The analysis guides the designer whether to choose covering with an aluminum layer the active region of the Hall sensor as a method to reduce the flicker noise and to improve the stability of the Hall sensor. Because Hall devices, as a reference element, always suffer from a large dispersion, improving their stability is a crucial issue. PMID:26784199

  17. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  18. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  19. Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

    DOEpatents

    You, Chun-Yeol; Bader, Samuel D.

    2001-01-01

    A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.

  20. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

    PubMed

    Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

    2014-04-18

    We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence. PMID:24642948

  1. Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

    DOE PAGESBeta

    Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

    2015-09-01

    The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and wemore » discuss relevant experimental data.« less

  2. Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

    SciTech Connect

    Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

    2015-09-01

    The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.

  3. Device for measuring oxygen activity in liquid sodium

    DOEpatents

    Roy, P.; Young, R.S.

    1973-12-01

    A composite ceramic electrolyte in a configuration (such as a closed end tube or a plate) suitable to separate liquid sodium from a reference electrode with a high impedance voltmeter connected to measure EMF between the sodium and the reference electrode as a measure of oxygen activity in the sodium is described. The composite electrolyte consists of zirconiacalcia with a bonded layer of thoria-yttria. The device is used with a gaseous reference electrode on the zirconia-calcia side and liquid sodium on the thoria-yttria side of the electrolyte. (Official Gazette)

  4. Versatile alignment layer method for new types of liquid crystal photonic devices

    SciTech Connect

    Finnemeyer, V.; Bryant, D.; Lu, L.; Bos, P.; Reich, R.; Clark, H.; Berry, S.; Bozler, C.; Yaroshchuk, O.

    2015-07-21

    Liquid crystal photonic devices are becoming increasingly popular. These devices often present a challenge when it comes to creating a robust alignment layer in pre-assembled cells. In this paper, we describe a method of infusing a dye into a microcavity to produce an effective photo-definable alignment layer. However, previous research on such alignment layers has shown that they have limited stability, particularly against subsequent light exposure. As such, we further describe a method of utilizing a pre-polymer, infused into the microcavity along with the liquid crystal, to provide photostability. We demonstrate that the polymer layer, formed under ultraviolet irradiation of liquid crystal cells, has been effectively localized to a thin region near the substrate surface and provides a significant improvement in the photostability of the liquid crystal alignment. This versatile alignment layer method, capable of being utilized in devices from the described microcavities to displays, offers significant promise for new photonics applications.

  5. Encoding Active Device Elements at Nanowire Tips.

    PubMed

    No, You-Shin; Gao, Ruixuan; Mankin, Max N; Day, Robert W; Park, Hong-Gyu; Lieber, Charles M

    2016-07-13

    Semiconductor nanowires and other one-dimensional materials are attractive for highly sensitive and spatially confined electrical and optical signal detection in biological and physical systems, although it has been difficult to localize active electronic or optoelectronic device function at one end of such one-dimensional structures. Here we report a new nanowire structure in which the material and dopant are modulated specifically at only one end of nanowires to encode an active two-terminal device element. We present a general bottom-up synthetic scheme for these tip-modulated nanowires and illustrate this with the synthesis of nanoscale p-n junctions. Electron microscopy imaging verifies the designed p-Si nanowire core with SiO2 insulating inner shell and n-Si outer shell with clean p-Si/n-Si tip junction. Electrical transport measurements with independent contacts to the p-Si core and n-Si shell exhibited a current rectification behavior through the tip and no detectable current through the SiO2 shell. Electrical measurements also exhibited an n-type response in conductance versus water-gate voltage with pulsed gate experiments yielding a temporal resolution of at least 0.1 ms and ∼90% device sensitivity localized to within 0.5 μm from the nanowire p-n tip. In addition, photocurrent experiments showed an open-circuit voltage of 0.75 V at illumination power of ∼28.1 μW, exhibited linear dependence of photocurrent with respect to incident illumination power with an estimated responsivity up to ∼0.22 A/W, and revealed localized photocurrent generation at the nanowire tip. The tip-modulated concept was further extended to a top-down/bottom-up hybrid approach that enabled large-scale production of vertical tip-modulated nanowires with a final synthetic yield of >75% with >4300 nanowires. Vertical tip-modulated nanowires were fabricated into >50 individually addressable nanowire device arrays showing diode-like current-voltage characteristics. These tip

  6. Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

    SciTech Connect

    Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

    2015-05-12

    A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

  7. The role of the inserted layer in resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Zhang, Dainan; Ma, Guokun; Zhang, Huaiwu; Tang, Xiaoli; Zhong, Zhiyong; Jie, Li; Su, Hua

    2016-07-01

    NiO resistive switching devices were fabricated by reactive DC magnetron sputtering at room temperature containing different inserted layers. From measurements, we demonstrated the filaments were made up by metal Co rather than the oxygen defect or other metal. A current jumping phenomenon in the SET process was observed, evidencing that the filament generating procedure was changed due to the inserted layers. In this process, we demonstrate the current jumping appeared in higher voltage region when the position of inserted layer was close to the bottom electrode. The I–V curves shifted to the positive direction as the thickness of inserted layer increasing. With the change of the number of inserted layers, SET voltages varied while the RESET voltage kept stable. According to the electrochemical metallization memory mechanism, detailed explanations on all the phenomena were addressed. This discovery is supposed of great potentials in the use of designing multi-layer RRAM devices.

  8. Silver nanowire composite window layers for fully solution-deposited thin-film photovoltaic devices.

    PubMed

    Chung, Choong-Heui; Song, Tze-Bin; Bob, Brion; Zhu, Rui; Duan, Hsin-Sheng; Yang, Yang

    2012-10-23

    A silver nanowire-indium tin oxide nanoparticle composite and its successful application to fully solution processed CuInSe(2) solar cells as a window layer are demonstrated, effectively replacing the traditionally sputtered both intrinsic zinc oxide and indium tin oxide layers. The devices utilizing the nanocomposite window layer demonstrate photovoltaic parameters equal to or even beyond those with sputtered intrinsic zinc oxide and indium tin oxide contacts. PMID:22887002

  9. Active graphene plasmonics for terahertz device applications

    NASA Astrophysics Data System (ADS)

    Otsuji, Taiichi; Popov, Vyacheslav; Ryzhii, Victor

    2014-03-01

    This paper reviews recent advances in graphene active plasmonics for terahertz (THz) device applications. Two-dimensional plasmons in graphene exhibit unique optoelectronic properties and mediate extraordinary light-matter interactions. It has been discovered theoretically that when the population of Dirac fermionic carriers in graphene are inverted by optical or electrical pumping, the excitation of graphene plasmons by the THz photons results in propagating surface plasmon polaritons with giant gain in a wide THz range. Furthermore, when graphene is patterned into a micro- or nanoribbon array by grating metallization, the structure acts as an active THz plasmonic amplifier, providing a superradiant plasmonic lasing with a giant gain at the plasmon modes in a wide THz frequency range. These new findings can lead to the creation of new types of plasmonic THz emitters and lasers operating even at room temperature.

  10. Efficiency enhancement in small molecular organic photovoltaic devices employing dual anode interfacial layers

    NASA Astrophysics Data System (ADS)

    Fleetham, Tyler; O'Brien, Barry; Mudrick, John P.; Xue, Jiangeng; Li, Jian

    2013-10-01

    We demonstrated enhanced efficiency in small molecule organic photovoltaic devices using dual organic interfacial layers of PEDOT:PSS followed by tetracene between the ITO anode and the organic donor material. The use of a small molecular templating layer, such as tetracene, proved to increase the molecular stacking of the subsequent phthalocyanine (Pc) based donor materials. Upon application in planar heterojunction devices of ZnPc and C60, an enhancement of over 80 percent in the donor contribution to the external quantum efficiency was observed attributed to the combination of exciton blocking by the higher band gap tetracene layer and enhanced exciton diffusion and charge transport resulting from the increased crystallinity.

  11. Performance improvement of rubrene-based organic light emitting devices with a mixed single layer

    NASA Astrophysics Data System (ADS)

    Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki

    2010-09-01

    We have investigated the performance of organic light-emitting devices (OLEDs) with a rubrene-doped mixed single layer by using 4,4'-bis[N-(1-napthyl)-N-phenyl- amion] biphenyl ( α-NPD) as hole transport layer. Comparing to a conventional heterostructure OLED, equal luminance vs. current density characteristics were obtained. In addition, maximum power efficiency was threefold improved, and the achieved value was 5.90 lm/W by optimizing a mixing ratio of hole and electron transport materials. By evaluating the temperature dependence of the J - V characteristics for electron-injection dominated device, the electron injection from Al/LiF to mixed organic layer is attributed to Schottky thermal emission model. And the barrier height of the electron injection from Al/LiF into mixed single layer was obtained to be 0.62 eV, which is lower than Al/Alq3 interface. Meanwhile, the mixed single-layer device exhibited superior operational durability at a half-luminance of 2,250 h under a constant current operation mode. The reliability was improved with a factor of two compared to the heterostructure device due to the improvement of stability in mixed organic molecules and removal of the heterojunction interface in the mixed single-layer device.

  12. Device structure for OLED light device having multi element light extraction and luminescence conversion layer

    DOEpatents

    Antoniadis; Homer , Krummacher; Benjamin Claus

    2008-01-22

    An apparatus such as a light source has a multi-element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

  13. Highly efficient polymer-based optoelectronic devices using PEDOT:PSS and a GO composite layer as a hole transport layer.

    PubMed

    Yu, Jae Choul; Jang, Jeong In; Lee, Bo Ram; Lee, Geon-Woong; Han, Joong Tark; Song, Myoung Hoon

    2014-02-12

    We demonstrate highly efficient polymer light-emitting diodes (PLEDs), as well as polymer solar cells (PSCs), using a solution-processable poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS):graphene oxide (GO) (PEDOT:GO) composite layer as hole transport layers (HTLs). The PEDOT:GO composite HTL layer shows enhanced charge carrier transport due to improved conductivity by benzoid-quinoid transitions with a well-matched work function between GO (4.89 eV) and PEDOT:PSS (4.95 eV). Moreover, it reduces remarkably exciton quenching and suppresses recombinations that bring higher charge extraction in PSCs and increases the recombinations of holes and electrons within the active layer by the blocking behavior of the electrons from a fluorescent semiconductor due to the existence of GO with large bandgap (∼3.6 eV) in the PEDOT:GO composite layer, therefore leading to an enhancement of device efficiency in PLEDs and PSCs. The optimized PLEDs and PSCs with a PEDOT:GO composite HTL layer shows the maximum luminous efficiency of 21.74 cd/A (at 6.4 V) for PLEDs, as well as the power conversion efficiency of 8.21% for PSCs, which were improved by ∼220 and 12%, respectively, compared to reference PLEDs and PSCs with a PEDOT:PSS layer. PMID:24433032

  14. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  15. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  16. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  17. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  18. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J

    2013-08-13

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

  19. Efficient zinc phthalocyanine/C60 heterojunction photovoltaic devices employing tetracene anode interfacial layers.

    PubMed

    Fleetham, Tyler B; Mudrick, John P; Cao, Weiran; Klimes, Kody; Xue, Jiangeng; Li, Jian

    2014-05-28

    We report the development of efficient small molecular organic photovoltaic devices incorporating tetracene anode interfacial layers. Planar heterojunction devices employing the tetracene anode interfacial layer achieved an EQE enhancement of 150% in the spectral region corresponding to ZnPc absorption. We demonstrate that this enhancement is due to the combined effect of the tetracene layer providing exciton-blocking at the anode/donor interface and potentially an increase in the exciton diffusion length in the ZnPc layer due to increased crystallinity and more preferred molecular stacking orientation. A power conversion efficiency of 4.7% was achieved for a planar heterojunction of a modified zinc phthalocyanine based material and C60 when employing the tetracene anode interfacial layer. By utilizing a planar-mixed heterojunction structure a peak EQE of nearly 70% and a power conversion efficiency of 5.8% was achieved. PMID:24708488

  20. Electrically Addressable Optical Devices Using A System Of Composite Layered Flakes Suspended In A Fluid Host To Obtain Angularly Depende

    DOEpatents

    Kosc, Tanya Z.; Marshall, Kenneth L.; Jacobs, Stephen D.

    2004-12-07

    Composite or layered flakes having a plurality of layers of different materials, which may be dielectric materials, conductive materials, or liquid crystalline materials suspended in a fluid host and subjected to an electric field, provide optical effects dependent upon the angle or orientation of the flakes in the applied electric field. The optical effects depend upon the composition and thickness of the layers, producing reflectance, interference, additive and/or subtractive color effects. The composition of layered flakes may also be selected to enhance and/or alter the dielectric properties of flakes, whereby flake motion in an electric field is also enhanced and/or altered. The devices are useful as active electro-optical displays, polarizers, filters, light modulators, and wherever controllable polarizing, reflecting and transmissive optical properties are desired.

  1. Effect of two yellow delta-emitting layers on device performance of phosphorescent white organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Zhao, Juan; Yu, Junsheng; Wang, Xiao; Zhang, Lei

    2013-03-01

    Phosphorescent white organic light-emitting devices (WOLEDs) with a structure of ITO/TAPC/δ-EML1/mCP:FIrpic/δ-EML2/Bphen/Mg:Ag were fabricated, wherein two ultrathin and host-free emitting layers (EMLs) were formed by using yellow bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2'] iridium (acetylacetonate) [(tbt)2Ir(acac)] and referred to as delta-EMLs (δ-EML1 and δ-EML2). By adjusting the thicknesses of δ-EMLs, a maximum current efficiency of 27.6 cd/A, an external quantum efficiency (EQE) of 10%, together with low efficiency roll-off at high luminance were achieved. The results showed that δ-EML1 played a dominant role on charge carrier trapping, while δ-EML2 had major impact on yellow light emission, which were highly sensitive to the location of δ-EMLs. Furthermore, by introducing 5-nm Au as anode modifying layer, high device efficiency was maintained along with excellent color stability of warm white emission, displaying color coordinates of (0.38, 0.42) and color temperature of 4348 K at a luminance of 7000 cd/m2. Importantly, explanation and analysis for the influence of both ultrathin δ-EMLs and anode modifying layer on device performance were proposed.

  2. The performance of smooth-wall drag reducing outer-layer devices in rough-wall boundary layers

    NASA Technical Reports Server (NTRS)

    Bandyopadhyay, P. R.

    1985-01-01

    The boundary layer drag on a 0.28 m x 0.91 m flat-plate was measured to evaluate the performance of smooth-wall drag reducing outer-layer devices in rough-wall boundary layers up to a chord Reynolds number, Re(c) of 17,000. The devices were a pair of thin flat ribbons placed in tandem. The wall conditions examined were smooth, transverse-groove roughnesses having cavity width/depth ratios of 0.7 (d-type) and 3 (k-type), and sandpaper roughness (k-type) of grit sizes 180, 50 and 36. The area-averaged wall-drag was reduced compared to the respective normal levels for all wall conditions. All k-type rough walls exhibited a comparable level of drag reduction (about 7 percent) which was lower than that in the smooth-wall. The d-type rough-wall exhibited a transitional behavior in that the drag reduction dropped from the smooth-wall level to that of the k-type roughnesses with increase in the flow speed. In further experiments on a 6 meter long sandpaper roughened wall and with a pair of symmetric airfoil devices in tandem at an Re(c) of 77,500, it was possible to recover the device drag penalty fully, but no net drag reduction was achieved. The apparent loss of performance of the devices in a rough-wall is explained in terms of their inability to alter the pressure component of the drag in a significant way.

  3. Some dynamical properties of very strong double layers in a triple plasma device

    NASA Technical Reports Server (NTRS)

    Carpenter, T.; Torven, S.

    1987-01-01

    Dynamical properties of very strong double layers seen in a differentially pumped triple plasma device are reported. These double layers are V-shaped. The following findings are discussed: (1) Disruptions in the double layer potential and in the plasma current occur when an inductance is placed in series with the bias supply between the sources in the external circuit. These disruptions, which can be highly periodic, are the result of a negative resistance region. (2) When reactances in the circuit are minimized, the double layer exhibits a jitter motion in position approximately equal to the double layer thickness. (3) When the bias between the sources is rapidly turned on, the initial phase in the double layer formation is the occurrence of a constant electric field for the first few microseconds. First the apparatus used in all of the work is discussed and then each of the three phenomena are considered.

  4. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    PubMed

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED. PMID:25832776

  5. Organic light-emitting device with a phosphor-sensitized fluorescent emission layer

    DOEpatents

    Forrest, Stephen; Kanno, Hiroshi

    2009-08-25

    The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

  6. Integration of active devices on smart polymers for neural interfaces

    NASA Astrophysics Data System (ADS)

    Avendano-Bolivar, Adrian Emmanuel

    The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of

  7. Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Kang, Seung Hyun; Yeom, Geun Young

    2013-11-15

    Silicon atomic layer etching (ALET) using Cl{sub 2} is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional damage removal method, such as the low-power CF{sub 4} plasma treatment technique, ALET produces less secondary damage to the substrate and gives exact etch depth control and extremely high etch selectivity to the contact SiO{sub 2} insulating pattern mold. When ALET is applied after a conventional damage removal technique, the sheet resistance of the damaged contact silicon surface is improved to a level close to that of a clean silicon surface, while exact atomic-scale depth control is maintained without changes in the pattern mold profile.

  8. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    SciTech Connect

    Rosikhin, Ahmad Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  9. INSERTION DEVICE ACTIVITIES FOR NSLS-II.

    SciTech Connect

    TANABE,T.; HARDER, D.A.; HULBERT, S.; RAKOWSKI, G.; SKARITKA, J.

    2007-06-25

    National Synchrotron Light Source-II (NSLS-II) will be a medium energy storage ring of 3GeV electron beam energy with sub-nm.rad horizontal emittance and top-off capability at 500mA. Damping wigglers will be used not only to reduce the beam emittance but also used as broadband sources for users. Cryo-Permanent Magnet Undulators (CPMUs) are considered for hard X-ray linear device, and permanent magnet based elliptically polarized undulators (EPUs) for variable polarization devices for soft X-ray. 6T superconducting wiggler with minimal fan angle will be installed in the second phase as well as quasi-periodic EPU for VUV and possibly high-temperature superconducting undulator. R&D plans have been established to pursue the performance enhancement of the baseline devices and to design new types of insertion devices. A new insertion device development laboratory will also be established.

  10. Stackelberg Game Based Power Allocation for Physical Layer Security of Device-to-device Communication Underlaying Cellular Networks

    NASA Astrophysics Data System (ADS)

    Qu, Junyue; Cai, Yueming; Wu, Dan; Chen, Hualiang

    2014-05-01

    The problem of power allocation for device-to-device (D2D) underlay communication to improve physical layer security is addressed. Specifically, to improve the secure communication of the cellular users, we introduce a Stackelberg game for allocating the power of the D2D link under a total power constraint and a rate constraint at the D2D pair. In the introduced Stackelberg game the D2D pair works as a seller and the cellular UEs work as buyers. Firstly, because the interference signals from D2D pair are unknown to both the legitimate receiver and the illegitimate eavesdropper, it is possible that a cellular UE decline to participate in the introduced Stackelberg game. So the condition under which a legitimate user will participate in the introduced Stackelberg game is discussed. Then, based on the Stackelberg game, we propose a semi-distributed power allocation algorithm, which is proved to conclude after finite-time iterations. In the end, some simulations are presented to verify the performance improvement in the physical layer security of cellular UEs using the proposed power allocation algorithm. We can determine that with the proposed algorithm, while the D2D pair's communication demand is met, the physical layer security of cellular UEs can be improved.

  11. High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

    NASA Technical Reports Server (NTRS)

    Fratello, V. J.; Wolfe, R.; Blank, S. L.; Nelson, T. J.

    1984-01-01

    Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

  12. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    NASA Astrophysics Data System (ADS)

    Rosikhin, Ahmad; Winata, Toto

    2016-04-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 - 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  13. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    DOEpatents

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  14. Relationship Between Absorber Layer Properties and Device Operation Modes For High Efficiency Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Ravichandran, Ram; Kokenyesi, Robert; Wager, John; Keszler, Douglas; CenterInverse Design Team

    2014-03-01

    A thin film solar cell (TFSC) can be differentiated into two distinct operation modes based on the transport mechanism. Current TFSCs predominantly exploit diffusion to extract photogenerated minority carriers. For efficient extraction, the absorber layer requires high carrier mobilities and long minority carrier lifetimes. Materials exhibiting a strong optical absorption onset near the fundamental band gap allows reduction of the absorber layer thickness to significantly less than 1 μm. In such a TFSC, a strong intrinsic electric field drives minority carrier extraction, resulting in drift-based transport. The basic device configuration utilized in this simulation study is a heterojunction TFSC with a p-type absorber layer. The diffusion/drift device operation modes are simulated by varying the thickness and carrier concentration of the absorber layer, and device performance between the two modes is compared. In addition, the relationship between device operation mode and transport properties, including carrier mobility and minority carrier lifetime are explored. Finally, candidate absorber materials that enable the advantages of a drift-based TFSC developed within the Center for Inverse Design are presented. School of Electrical Engineering and Computer Science.

  15. Cognitive Inference Device for Activity Supervision in the Elderly

    PubMed Central

    2014-01-01

    Human activity, life span, and quality of life are enhanced by innovations in science and technology. Aging individual needs to take advantage of these developments to lead a self-regulated life. However, maintaining a self-regulated life at old age involves a high degree of risk, and the elderly often fail at this goal. Thus, the objective of our study is to investigate the feasibility of implementing a cognitive inference device (CI-device) for effective activity supervision in the elderly. To frame the CI-device, we propose a device design framework along with an inference algorithm and implement the designs through an artificial neural model with different configurations, mapping the CI-device's functions to minimise the device's prediction error. An analysis and discussion are then provided to validate the feasibility of CI-device implementation for activity supervision in the elderly. PMID:25405211

  16. Solution-Processed Small Molecular Organic Light-Emitting Devices with a Mixed Single Layer

    NASA Astrophysics Data System (ADS)

    Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki

    2011-01-01

    We investigated the characteristics of solution-processed mixed-single-layer organic light-emitting devices (OLEDs) by mixing an electron injection material, a hole transport material, and a dopant material based on 5,6,11,12-tetraphenylnaphthacene (rubrene). The mixed-single-layer OLEDs showed better performance by optimizing the solution concentration and mixing ratio of organic materials. The performance was further improved by mixing chloroform (95 wt %) and toluene (5 wt %) as a solvent. The maximum luminance and power efficiency obtained were 12,400 cd/m2 and 1.1 lm/W, respectively. The mixed-single-layer OLEDs by solution process can be expected as an alternative route to the fabrication of small-molecular OLEDs with reduced cost of devices and avoiding the complexities of the co-evaporation of multiple organic materials in the vacuum deposition process.

  17. Impact of silicon epitaxial thickness layer in high power diode devices

    NASA Astrophysics Data System (ADS)

    Mee, Cheh Chai; Arshad, M. K. Md.; Hashim, U.; Fathil, M. F. M.

    2016-07-01

    The p-i-n diode is one of the earliest semiconductor devices developed for power circuit application. It is formed with the intrinsically doped i.e. i-layer sandwiched between the p-type and n-type layers. In this paper, we focus on the integration of the intrinsic region of silicon p-i-n diode to the current-voltage characteristics. In our structure, n-type refers to the bulk substrate and intrinsic region refers to the epitaxial layer of the silicon substrate. We make a thickness variation in the intrinsic region of p-i-n diode and how it affects diode performance. An additional layer is added on the epitaxial layer during the process to control the diffusion from the bottom of bulk substrate. Result shows that intrinsic layer optimization has successfully enhances the diode device robustness in terms of diode current-voltage characteristics, which reflects better manufacturing yield and improve the final product performance.

  18. Calcium chloride electron injection/extraction layers in organic electronic devices

    SciTech Connect

    Qu, Bo E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang E-mail: qhgong@pku.edu.cn

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl{sub 2} was 3.5 V and 21 960 cd/m{sup 2}, respectively. OLED with 1.5 nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  19. Design of a triple plasma device for double layer and turbulence investigations

    NASA Astrophysics Data System (ADS)

    Kim, Justin; Jackson, Cory; Hershkowitz, Noah; Siddiqui, M. Umair

    2014-10-01

    A triple plasma device is being constructed at the University of Wisconsin- Madison for basic plasma physics investigations. The device consists of two outer chambers and a central chamber. Separate plasmas are generated in the two outer chambers, and their interactions are measured in the central chamber. DC plasma is generated via thermionic emission of electrons from a hot-filament and rf plasma is generated either capacitively or inductively. The device is used to investigate double layer structures [Coakley and Hershkowitz, Physics of Fluids 22, 1171 (1979)] and beam plasma instabilities. The design, construction, and operation of this device are discussed. Initial results are presented here. This work is funded by U.S. Department of Energy Grant No. DE-FG02-97ER54437 and NSF Undergraduate Funding.

  20. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  1. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    NASA Astrophysics Data System (ADS)

    Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Akey, Austin; Aziz, Michael J.; Buonassisi, Tonio; Persans, Peter; Warrender, Jeffrey M.

    2016-05-01

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer's law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  2. Molecular Interdiffusion between Stacked Layers by Solution and Thermal Annealing Processes in Organic Light Emitting Devices.

    PubMed

    Ohisa, Satoru; Pu, Yong-Jin; Yamada, Norifumi L; Matsuba, Go; Kido, Junji

    2015-09-23

    In organic light emitting devices (OLEDs), interfacial structures between multilayers have large impacts on the characteristics of OLEDs. Herein, we succeeded in revealing the interdiffusion in solution processed and thermal annealed OLEDs by neutron reflectometry. We investigated interfaces between a polymer under layer and small molecules upper layer. The small molecules diffused into the swollen polymer layer during the interfacial formation by the solution process, but the polymer did not diffuse into the small molecules layer. At temperatures close to the glass transition temperatures of the materials, asymmetric molecular diffusion was observed. We elucidated the effects of the interdiffusion on the characteristics of OLEDs. Partially mixing the interface improved the current efficiencies due to suppressed triplet-polaron quenching at the interface. Controlling and understanding the interfacial structures of the miultilayers will be more important to improve the OLED characteristics. PMID:26331696

  3. Selective and non-selective deposition of thick polysilicon layers for adaptive mirror device

    NASA Astrophysics Data System (ADS)

    Bartek, M.; Vdovin, G. V.; Wolffenbuttel, R. F.

    1997-09-01

    Two IC-process-compatible fabrication schemes, based on the selective and non-selective deposition of a thick polysilicon layer in an epitaxial reactor, are used for adaptive micromirror device fabrication. The micromirror consists of a composite diaphragm (a 0960-1317/7/3/014/img1 square-shaped silicon nitride membrane on which an additional 0960-1317/7/3/014/img2 thick polycrystalline silicon layer with a circular aperture is formed) coated with a 0960-1317/7/3/014/img3 reflective aluminium layer on a bulk micromachined 10.5 mm by 10.5 mm square silicon frame. The additional polycrystalline silicon layer with a circular aperture improves the optical properties of a deflected square-shaped silicon nitride membrane resulting from anisotropic KOH etching.

  4. Activated-Carbon Sorbent With Integral Heat-Transfer Device

    NASA Technical Reports Server (NTRS)

    Jones, Jack A.; Yavrouian, Andre

    1996-01-01

    Prototype adsorption device used, for example, in adsorption heat pump, to store natural gas to power automobile, or to separate components of fluid mixtures. Device includes activated carbon held together by binder and molded into finned heat-transfer device providing rapid heating or cooling to enable rapid adsorption or desorption of fluids. Concepts of design and fabrication of device equally valid for such other highly thermally conductive devices as copper-finned tubes, and for such other high-surface-area sorbents as zeolites or silicates.

  5. Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001).

    PubMed

    Pant, P; Narayan, J; Wushuer, A; Manghnani, M H

    2008-11-01

    Raman spectroscopy in conjunction with high-resolution transmission electron microscopy (HRTEM) has been used to study structural characteristics and strain distribution of the nanostructured GaN nucleation layer (NL) and the GaN device layer on (0001) sapphire substrates used for light-emitting diodes and lasers. Raman peaks corresponding to the cubic and the hexagonal phase of GaN are observed in the Raman spectrum from 15 nm and 45 nm NLs. A comparison of the peak intensities for the cubic and hexagonal phases of GaN in the NLs suggests that the cubic phase is dominant in the 15 nm NL and the hexagonal phase in the 45 nm NL. An increase in the density of stacking faults in the metastable cubic GaN (c-GaN) phase with increasing growth time lowers the system energy as well as locally converts c-GaN phase into hexagonal GaN (h-GaN). It also explains the observation of the more intense peaks of h-GaN in the 45 nm NL compared to c-GaN peaks. For the sample wherein an h-GaN device layer was grown at higher temperatures on the NL, narrow Raman peaks corresponding to only h-GaN were observed, confirming the high-quality of the films. The peak shift of the E2(H)(LO) mode of h-GaN in the NLs and the h-GaN film suggests the presence of a tensile stress in the NL which is attributed to defects such as stacking faults and twins, and a compressive stress in high-temperature grown h-GaN film which is attributed to the thermal-expansion mismatch between the film and the substrate. The peak shifts of the substrate also reveal that during the low temperature growth of the NL the substrate is under a compressive stress which is attributed to defects in the NL and during the high temperature growth of the device layer, there is a tensile strain in the substrate as expected from differences in coefficients of thermal expansion of the film and the substrate during the cooling cycle. PMID:19198336

  6. Effects of dust particles and layer properties on organic electronic devices fabricated by stamping

    NASA Astrophysics Data System (ADS)

    Cao, Yifang; Kim, Changsoon; Forrest, Stephen R.; Soboyejo, Wole

    2005-08-01

    The mechanical properties of organic semiconductor thin films are determined using nanoindentation. The measured mechanical properties are incorporated into finite element simulations of deformation that arise during cathode patterning of organic electronic devices by pressure stamping methods. Simulations show that dust particles interposed between the stamp and film surface affect the evolution of contact areas when silicon or compliant polydimethyl-siloxane stamp dies are employed. We also examine the effects of the transferred metal layer thickness and stamp bulk modulus. Experimental and modeling results are found to be in good agreement. The implications of the results are discussed for the fabrication of a range of organic electronic devices.

  7. Formation of a Top Electrode on Vertical Si Nanowire Devices Using Graphene as a Supporting Layer

    NASA Astrophysics Data System (ADS)

    Jeong, Hyeon Ho; Kim, Jungkil; Lee, Jinsup; Jeon, Seokwoo; Lee, Woo; Lee, Seok-Hee

    2012-10-01

    This letter presents a method of forming a top electrode on vertical silicon nanowires by using multilayer graphene as a supporting layer during metal deposition. We exploit graphene's unique material properties such as its impermeability to various gases and ions. An improved shallow trench isolation process is also presented to fabricate self-aligned silicon nanowire arrays for device integration. By this method, silicon nanowire bundle arrays with air gap structures are successfully fabricated using a top-down approach. This technique is expected to find use in many nanowire device applications.

  8. Weak localization and electron–electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron–electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (∼T ‑0.4). These results establish that the dominant scattering mechanism in FLP is electron–electron interactions.

  9. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  10. Quantum transport measurement of few-layer WTe2 field effect devices

    NASA Astrophysics Data System (ADS)

    Chen, Jianhao; Liu, Xin; Tian, Shibing; Zhang, Chenglong; Jia, Shuang

    2015-03-01

    We have performed systematic quantum transport measurement on field effect devices fabricated from few-layer WTe2 single crystals. We found that the magnetoresistance of few-layer WTe2 could be very different from that of bulk samples, which may arise from the imbalance of electron and hole carriers in the samples. We shall discuss our findings in more details in light of recent progress in our experiment. This work is supported by National Natural Science Foundation of China (11374021 and 11327406); by China Ministry of Science and Technology under Contract # 2014CB920900 and 2013CB921900; and by the Young 1000-Talent Program of China.

  11. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    PubMed Central

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-01-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V−1s−1, large memory window (∼16 V), low read voltages (∼−1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices. PMID:24912617

  12. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  13. Self-activated mesh device using shape memory alloy for periosteal expansion osteogenesis.

    PubMed

    Yamauchi, Kensuke; Takahashi, Tetsu; Tanaka, Kenko; Nogami, Shinnosuke; Kaneuji, Takeshi; Kanetaka, Hiroyasu; Miyazaki, Toshiki; Lethaus, Bernd; Kessler, Peter

    2013-07-01

    The present study evaluated the use of this self-activated shape memory alloy (SMA) device, with a focus on its effects in the region under the periosteum. Twelve Japanese white rabbits were used in this study. The device was inserted under the periosteum at the forehead. In the experimental group, the device was pushed, bent, and attached to the bone surface and fixed with a titanium screw. In control group, the device was only inserted under the periosteum. After 14 days, the screw was removed and the mesh was activated in the experimental group. Rabbits were sacrificed 5 and 8 weeks after the operation and newly formed bone was histologically and radiographically evaluated. The quantitative data by the area and the occupation of newly formed bone indicated that the experimental group had a higher volume of new bone than the control group at each consolidation period. Histologically, some newly formed bone was observed and most of the subperiosteal space underneath the device was filled with fibrous tissue, and a thin layer of immature bone was observed in the control group. In the experimental group, multiple dome-shaped bones, outlined by thin and scattered trabeculae, were clearly observed under the SMA mesh device. The use of self-activated devices for the periosteal expansion technique may make it possible to avoid donor site morbidity, trans-skin activation rods, any bone-cutting procedure, and the following intermittent activation procedure. PMID:23359561

  14. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and η = 13.0%.

  15. Graphene oxide as a promising hole injection layer for MoS₂-based electronic devices.

    PubMed

    Musso, Tiziana; Kumar, Priyank V; Foster, Adam S; Grossman, Jeffrey C

    2014-11-25

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. The TMDC monolayer MoS2 has gained significant attention as a channel material for next-generation transistors. However, while n-type single-layer MoS2 devices can be made with relative ease, fabrication of p-type transistors remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band leading to large p-type Schottky barrier heights (SBH). Here, we propose the utilization of graphene oxide (GO) as an efficient hole injection layer for single-layer MoS2-based electronic and optoelectronic devices. Using first-principles computations, we demonstrate that GO forms a p-type contact with monolayer MoS2, and that the p-type SBH can be made smaller by increasing the oxygen concentration and the fraction of epoxy functional groups in GO. Our analysis shows that this is possible due to the high work function of GO and the relatively weak Fermi-level pinning at the MoS2/GO interfaces compared to traditional MoS2/metal systems (common metals are Ag, Al, Au, Ir, Pd, Pt). The combination of easy-to-fabricate and inexpensive GO with MoS2 could be promising for the development of hybrid all-2D p-type electronic and optoelectronic devices on flexible substrates. PMID:25347209

  16. Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.

    PubMed

    Kim, Ki Kang; Hsu, Allen; Jia, Xiaoting; Kim, Soo Min; Shi, Yumeng; Dresselhaus, Mildred; Palacios, Tomas; Kong, Jing

    2012-10-23

    Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is close to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 μm(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer in top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V·s) range) remains the same before and after device integration. PMID:22970651

  17. Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

    SciTech Connect

    Kim, Taehee; Choi, Jin Young; Jeon, Jun Hong; Kim, Youn-Su; Kim, Bong-Soo; Lee, Doh-Kwon; Kim, Honggon; Han, Seunghee; Kim, Kyungkon

    2012-10-15

    Highlights: ► This work enhanced power conversion efficiency of the hybrid tandem solar cell from 1.0% to 2.6%. ► The interfacial series resistance of the tandem solar cell was eliminated by inserting ITO layer. ► This work shows the feasibility of the highly efficient hybrid tandem solar cells. -- Abstract: We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V{sub OC} = 1.041 V, J{sub SC} = 2.97 mA/cm{sup 2}, FF = 32.3%) to 2.6% (V{sub OC} = 1.336 V, J{sub SC} = 4.65 mA/cm{sup 2}, FF = 41.98%) due to the eliminated interfacial series resistance.

  18. Open active cloaking and illusion devices for the Laplace equation

    NASA Astrophysics Data System (ADS)

    Ma, Qian; Yang, Fan; Jin, Tian Yu; Lei Mei, Zhong; Cui, Tie Jun

    2016-04-01

    We propose open active cloaking and illusion devices for the Laplace equation. Compared with the closed configurations of active cloaking and illusion devices, we focus on improving the distribution schemes for the controlled sources, which do not have to surround the protected object strictly. Instead, the controlled sources can be placed in several small discrete clusters, and produce the desired voltages along the controlled boundary, to actively hide or disguise the protected object. Numerical simulations are performed with satisfactory results, which are further validated by experimental measurements. The open cloaking and illusion devices have many advantages over the closed configurations in various potential applications.

  19. Thin-Layer Chromatography: Four Simple Activities for Undergraduate Students.

    ERIC Educational Resources Information Center

    Anwar, Jamil; And Others

    1996-01-01

    Presents activities that can be used to introduce thin-layer chromatography at the undergraduate level in relatively less developed countries and that can be performed with very simple and commonly available apparati in high schools and colleges. Activities include thin-layer chromatography with a test-tube, capillary feeder, burette, and rotating…

  20. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  1. Enhancement of effective electromechanical coupling factor by mass loading in layered surface acoustic wave device structures

    NASA Astrophysics Data System (ADS)

    Tang, Gongbin; Han, Tao; Teshigahara, Akihiko; Iwaki, Takao; Hashimoto, Ken-ya

    2016-07-01

    This paper describes a drastic enhancement of the effective coupling factor K\\text{e}2 by mass loading in layered surface acoustic wave (SAW) device structures such as the ScAlN film/Si substrate structure. This phenomenon occurs when the piezoelectric layer exhibits a high acoustic wave velocity. The mass loading decreases the SAW velocity and causes SAW energy confinement close to the top surface where an interdigital transducer is placed. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This K\\text{e}2 enhancement was also found in various combinations of electrode, piezoelectric layer, and/or substrate materials. The existence of this phenomenon was verified experimentally using the ScAlN film/Si substrate structure.

  2. Sporadic E-Layers and Meteor Activity

    NASA Astrophysics Data System (ADS)

    Alimov, Obid

    2016-07-01

    In average width it is difficult to explain variety of particularities of the behavior sporadic layer Es ionospheres without attraction long-lived metallic ion of the meteoric origin. Mass spectrometric measurements of ion composition using rockets indicate the presence of metal ions Fe+, Mg+, Si+, Na+, Ca+, K+, Al+ and others in the E-region of the ionosphere. The most common are the ions Fe+, Mg+, Si+, which are primarily concentrated in the narrow sporadic layers of the ionosphere at altitudes of 90-130 km. The entry of meteoric matter into the Earth's atmosphere is a source of meteor atoms (M) and ions (M +) that later, together with wind shear, produce midlatitude sporadic Es layer of the ionosphere. To establish the link between sporadic Es layer and meteoroid streams, we proceeded from the dependence of the ionization coefficient of meteors b on the velocity of meteor particles in different meteoroid streams. We investigated the dependence of the critical frequency f0Es of sporadic E on the particle velocity V of meteor streams and associations. It was established that the average values of f0Es are directly proportional to the velocity V of meteor streams and associations, with the correlation coefficient of 0.53 < R < 0.74. Thus, the critical frequency of the sporadic layer Es increases with the increase of particle velocity V in meteor streams, which indicates the direct influence of meteor particles on ionization of the lower ionosphere and formation of long-lived metal atoms M and ions M+ of meteoric origin.

  3. Electrochromic devices

    DOEpatents

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  4. Three-dimensional microfluidic devices fabricated in layered paper and tape

    PubMed Central

    Martinez, Andres W.; Phillips, Scott T.; Whitesides, George M.

    2008-01-01

    This article describes a method for fabricating 3D microfluidic devices by stacking layers of patterned paper and double-sided adhesive tape. Paper-based 3D microfluidic devices have capabilities in microfluidics that are difficult to achieve using conventional open-channel microsystems made from glass or polymers. In particular, 3D paper-based devices wick fluids and distribute microliter volumes of samples from single inlet points into arrays of detection zones (with numbers up to thousands). This capability makes it possible to carry out a range of new analytical protocols simply and inexpensively (all on a piece of paper) without external pumps. We demonstrate a prototype 3D device that tests 4 different samples for up to 4 different analytes and displays the results of the assays in a side-by-side configuration for easy comparison. Three-dimensional paper-based microfluidic devices are especially appropriate for use in distributed healthcare in the developing world and in environmental monitoring and water analysis. PMID:19064929

  5. Multilayered gold/silica nanoparticulate bilayer devices using layer-by-layer self organisation for flexible bending and pressure sensing applications

    SciTech Connect

    Shah Alam, Md.; Mohammed, Waleed S.; Dutta, Joydeep

    2014-02-17

    A pressure and bending sensor was fabricated using multilayer thin films fabricated on a flexible substrate based on layer-by-layer self-organization of 18 nm gold nanoparticles separated by a dielectric layer of 30 nm silica nanoparticles. 50, 75, and 100 gold-silica bi-layered films were deposited and the device characteristics were studied. A threshold voltage was required for electron conduction which increases from 2.4 V for 50 bi-layers to 3.3 V for 100 bi-layers. Upon bending of the device up to about 52°, the threshold voltage and slope of the I-V curves change linearly. Electrical characterization of the multilayer films was carried out under ambient conditions with different pressures and bending angles in the direct current mode. This study demonstrates that the developed multilayer thin films can be used as pressure as well as bending sensing applications.

  6. Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

    NASA Technical Reports Server (NTRS)

    Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Daniel L.

    2008-01-01

    Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

  7. Correlation of photoluminescent quantum efficiency and device characteristics for the soluble electrophosphorescent light emitter with interfacial layers

    NASA Astrophysics Data System (ADS)

    Kang, Nam Su; Ju, Byeong-Kwon; Kim, Ji Whan; Kim, Jang-Joo; Yu, Jae-Woong; Chin, Byung Doo

    2008-07-01

    We have investigated the effects of interfacial layers on the properties of soluble phosphorescent organic light emitting devices. Two kinds of polyfluorene-based interfacial layer materials have been studied; both were spin coated on top of PEDOT:PSS to form the insoluble layers by thermal annealing. The molecular-doped, phosphorescent light emitting layer comprising a polymeric host, small molecular host, and guest molecule was fabricated onto the thin interfacial layer. The photoluminescence quantum yield (PLQY) of these layers was measured with an integrating sphere. We have calculated the PLQY values of the single phosphorescent light emitting layer and various organic multilayers incorporating the interfacial layers, showing that a reduction in PLQY due to the interfacial quenching is more significant in the thicker interfacial layer structures. In spite of the decrease in PLQY induced by the triplet energy mismatch, polyfluorene-based interfacial layers improved the charge injection from PEDOT:PSS to the emitting layer, which results in the enhanced brightness and current. The triplet quenching by the interfacial layer could explain the reduction in luminous efficiency of the devices compared to the reference. This was also investigated by studying the charge carrier trapping, change in the spectral characteristics induced by the shift in the emission zone, and the analysis on the carrier balance of devices.

  8. Effect of Mesostructured Layer upon Crystalline Properties and Device Performance on Perovskite Solar Cells.

    PubMed

    Listorti, Andrea; Juarez-Perez, Emilio J; Frontera, Carlos; Roiati, Vittoria; Garcia-Andrade, Laura; Colella, Silvia; Rizzo, Aurora; Ortiz, Pablo; Mora-Sero, Ivan

    2015-05-01

    One of the most fascinating characteristics of perovskite solar cells (PSCs) is the retrieved obtainment of outstanding photovoltaic (PV) performances withstanding important device configuration variations. Here we have analyzed CH3NH3PbI3-xClx in planar or in mesostructured (MS) configurations, employing both titania and alumina scaffolds, fully infiltrated with perovskite material or presenting an overstanding layer. The use of the MS scaffold induces to the perovskite different structural properties, in terms of grain size, preferential orientation, and unit cell volume, in comparison to the ones of the material grown with no constraints, as we have found out by X-ray diffraction analyses. We have studied the effect of the PSC configuration on photoinduced absorption and time-resolved photoluminescence, complementary techniques that allow studying charge photogeneration and recombination. We have estimated electron diffusion length in the considered configurations observing a decrease when the material is confined in the MS scaffold with respect to a planar architecture. However, the presence of perovskite overlayer allows an overall recovering of long diffusion lengths explaining the record PV performances obtained with a device configuration bearing both the mesostructure and a perovskite overlayer. Our results suggest that performance in devices with perovskite overlayer is mainly ruled by the overlayer, whereas the mesoporous layer influences the contact properties. PMID:26263326

  9. Development of an ab-initio calculation method for 2D layered materials-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Kim, Han Seul; Kim, Yong-Hoon

    We report on the development of a novel first-principles method for the calculation of non-equilibrium nanoscale device operation process. Based on region-dependent Δ self-consistent field method beyond the standard density functional theory (DFT), we will introduce a novel method to describe non-equilibrium situations such as external bias and simultaneous optical excitations. In particular, we will discuss the limitation of conventional method and advantage of our scheme in describing 2D layered materials-based devices operations. Then, we investigate atomistic mechanism of optoelectronic effects from 2D layered materials-based devices and suggest the optimal material and architecture for such devices.

  10. Development of novel active transport membrande devices

    SciTech Connect

    Laciak, D.V.

    1994-11-01

    Air Products has undertaken a research program to fabricate and evaluate gas separation membranes based upon promising ``active-transport`` (AT) materials recently developed in our laboratories. Active Transport materials are ionic polymers and molten salts which undergo reversible interaction or reaction with ammonia and carbon dioxide. The materials are useful for separating these gases from mixtures with hydrogen. Moreover, AT membranes have the unique property of possessing high permeability towards ammnonia and carbon dioxide but low permeability towards hydrogen and can thus be used to permeate these components from a gas stream while retaining hydrogen at high pressure.

  11. Active unjamming of confluent cell layers

    NASA Astrophysics Data System (ADS)

    Marchetti, M. Cristina

    Cell motion inside dense tissues governs many biological processes, including embryonic development and cancer metastasis, and recent experiments suggest that these tissues exhibit collective glassy behavior. Motivated by these observations, we have studied a model of dense tissues that combines self-propelled particle models and vertex models of confluent cell layers. In this model, referred to as self-propelled Voronoi (SPV), cells are described as polygons in a Voronoi tessellation with directed noisy cell motility and interactions governed by a shape energy that incorporates the effects of cell volume incompressibility, contractility and cell-cell adhesion. Using this model, we have demonstrated a new density-independent solid-liquid transition in confluent tissues controlled by cell motility and a cell-shape parameter measuring the interplay of cortical tension and cell-cell adhesion. An important insight of this work is that the rigidity and dynamics of cell layers depends sensitively on cell shape. We have also used the SPV model to test a new method developed by our group to determine cellular forces and tissue stresses from experimentally accessible cell shapes and traction forces, hence providing the spatio-temporal distribution of stresses in motile dense tissues. This work was done with Dapeng Bi, Lisa Manning and Xingbo Yang. MCM was supported by NSF-DMR-1305184 and by the Simons Foundation.

  12. Geometric investigation of a gaming active device

    NASA Astrophysics Data System (ADS)

    Menna, Fabio; Remondino, Fabio; Battisti, Roberto; Nocerino, Erica

    2011-07-01

    3D imaging systems are widely available and used for surveying, modeling and entertainment applications, but clear statements regarding their characteristics, performances and limitations are still missing. The VDI/VDE and the ASTME57 committees are trying to set some standards but the commercial market is not reacting properly. Since many new users are approaching these 3D recording methodologies, clear statements and information clarifying if a package or system satisfies certain requirements before investing are fundamental for those users who are not really familiar with these technologies. Recently small and portable consumer-grade active sensors came on the market, like TOF rangeimaging cameras or low-cost triangulation-based range sensor. A quite interesting active system was produced by PrimeSense and launched on the market thanks to the Microsoft Xbox project with the name of Kinect. The article reports the geometric investigation of the Kinect active sensors, considering its measurement performances, the accuracy of the retrieved range data and the possibility to use it for 3D modeling application.

  13. Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Doo Chin, Byung

    2007-08-01

    We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad™ of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process.

  14. Parallel combinatorial chemical synthesis using single-layer poly(dimethylsiloxane) microfluidic devices

    PubMed Central

    Dexter, Joseph P.; Parker, William

    2009-01-01

    Improving methods for high-throughput combinatorial chemistry has emerged as a major area of research because of the importance of rapidly synthesizing large numbers of chemical compounds for drug discovery and other applications. In this investigation, a novel microfluidic chip for performing parallel combinatorial chemical synthesis was developed. Unlike past microfluidic systems designed for parallel combinatorial chemistry, the chip is a single-layer device made of poly(dimethylsiloxane) that is extremely easy and inexpensive to fabricate. Using the chip, a 2×2 combinatorial series of amide-formation reactions was performed. The results of this combinatorial synthesis indicate that the new device is an effective platform for running parallel organic syntheses at significantly higher throughput than with past methodologies. Additionally, a design algorithm for scaling up the 2×2 combinatorial synthesis chip to address more complex cases was developed. PMID:20216962

  15. (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

    NASA Technical Reports Server (NTRS)

    Barner, J. B.; Hunt, B. D.; Foote, M. C.

    1995-01-01

    We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

  16. A liftoff process of GaN layers and devices through nanoporous transformation

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Leung, Benjamin; Han, Jung

    2012-04-01

    A process to slice and separate GaN device layers for vertical light emitting diodes (LEDs) is presented through a developed electrochemical anodization process to create nanoporous (NP) GaN of designed porosity profiles. The NP GaN serves dual purposes of supporting subsequent overgrowth of LED structures while undergoing, during growth, shape transformation into a largely voided morphology. It is shown that this voided region decreases the lateral fracture resistance and enables large-area separation of the LED structures after appropriate wafer bonding. The separated LED layers are shown to have comparable material quality before and after the liftoff process. Blue emitting GaN LEDs are transferred to silicon substrates with vertical configuration by this unique process.

  17. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    PubMed Central

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-01-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

  18. Top coat less resist process development for contact layer of 40nm node logic devices

    NASA Astrophysics Data System (ADS)

    Fujita, Masafumi; Uchiyama, Takayuki; Furusho, Tetsunari; Otsuka, Takahisa; Tsuchiya, Katsuhiro

    2010-04-01

    ArF immersion lithography has been introduced in mass production of 55nm node devices and beyond as the post ArF dry lithography. Due to the existence of water between the resist film and lens, we have many concerns such as leaching of PAG and quencher from resist film into immersion water, resist film swelling by water, keeping water in the immersion hood to avoid water droplets coming in contact with the wafer, and so on. We have applied to the ArF dry resist process an immersion topcoat (TC) process in order to ensure the hydrophobic property as well as one for protecting the surface. We investigate the TC-less resist process with an aim to improve CoO, the yield and productivity in mass production of immersion lithography. In this paper, we will report TC-less resist process development for the contact layer of 40nm node logic devices. It is important to control the resist surface condition to reduce pattern defects, in particular in the case of the contact layer. We evaluated defectivity and lithography performance of TC-less resist with changing hydrophobicity before and after development. Hydrophobicity of TC-less resist was controlled by changing additives with TC functions introduced into conventional ArF dry resist. However, the hydrophobicity control was not sufficient to reduce the number of Blob defects compared with the TC process. Therefore, we introduced Advanced Defect Reduction (ADR) rinse, which was a new developer rinse technique that is effective against hydrophobic surfaces. We have realized Blob defect reduction by hydrophobicity control and ADR rinse. Furthermore, we will report device performance, yield, and immersion defect data at 40nm node logic devices with TC-less resist process.

  19. Charge transport and device physics of layered-crystalline organic semiconductors (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Hasegawa, Tatsuo

    2015-10-01

    Here we present and discuss our recent investigations into the understanding of microscopic charge transport, novel film processing technologies, and a development of layered-crystalline organic semiconductors for high performance OTFTs. We first discuss the microscopic charge transport in the OTFTs, as investigated by field-induced electron spin resonance spectroscopy. The technique can detect signals due to tiny amount of field-induced carriers, accumulated at the semiconductor-insulator interfaces. Following aspects are presented and discussed; 1) Carrier motion within the crystalline domains can be understood in terms of the trap-and-release transport, 2) charge trap states are spatially extended over several sites depending on the trap levels, and 3) the intra- and inter-domain transport can be discriminated by anisotropic electron spin resonance measurements. Next we discuss novel print production technologies for organic semiconductors showing high layered crystallinity. The concept of "printed electronics" is now regarded as a realistic paradigm to manufacture light-weight, thin, and impact-resistant electronics devices, although production of highly crystalline semiconductor films may be incompatible with conventional printing process. We here present printing techniques for manufacturing high performance OTFTs; 1) double-shot inkjet printing for small-molecule-based semiconductors, and 2) push-coating for semiconducting polymers. We demonstrate that both processes are useful to manufacture high quality semiconductor layers with the high layered crystallinity.

  20. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  1. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    SciTech Connect

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  2. Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Gamarra, Piero; Lacam, Cedric; Tordjman, Maurice; Splettstösser, Jörg; Schauwecker, Bernd; di Forte-Poisson, Marie-Antoinette

    2015-03-01

    This work reports on the optimisation of carbon doping GaN buffer layer (BL) for AlGaN/GaN HEMT (high electron mobility transistor) structures, grown by low pressure metal-organic vapour phase epitaxy (LP-MOVPE) on 3 in. SiC semi-insulating substrates. The incorporation of carbon impurities in GaN is studied as a function of the growth conditions, without using an external carbon source. We observed that the C incorporation can be effectively controlled over more than one order of magnitude by tuning the reactor pressure and the growth temperature, without degradation of the crystalline properties of the GaN layers. HEMT structures with a specific barrier design were grown with different carbon dopings in the GaN BL and processed into transistors to evaluate the impact of the BL doping on the device performances. A significant improvement of the HEMT drain leakage current and of the breakdown voltage was obtained by increasing the carbon incorporation in the GaN BL. The RF performances of the devices show a trade-off between leakage currents and trapping phenomena which are enhanced by the use of carbon doping, limiting the delivered output power. An output power as high as 6.5 W/mm with a Power Added Efficiency of 70% has been achieved at 2 GHz by the HEMT structures with the lowest carbon doping in the BL.

  3. Sporadic Layer es and Siesmic Activity

    NASA Astrophysics Data System (ADS)

    Alimov, Obid; Blokhin, Alexandr; Kalashnikova, Tatyana

    2016-07-01

    To determine the influence of seismogenic disturbances on the calm state of the iono-sphere and assess the impact of turbulence development in sporadic-E during earthquake prepa-ration period we calculated the variation in the range of semitransparency ∆fES = f0ES - fbES. The study was based primarily on the ionograms obtained by vertical sounding of the ionosphere at Dushanbe at nighttime station from 15 to 29 August 1986. In this time period four successive earthquakes took place, which serves the purpose of this study of the impact of seis-mogenic processes on the intensity of the continuous generation of ionospheric turbulence. Analysis of the results obtained for seismic-ionospheric effects of 1986 earthquakes at station Dushanbe has shown that disturbance of ionospheric parameters during earthquake prepa-ration period displays a pronounced maximum with a duration of t = 1-6 hours. Ionospheric effects associated with the processes of earthquake preparation emerge quite predictably, which verifies seismogenic disturbances in the ionosphere. During the preparation of strong earthquakes, ionograms of vertical sounding produced at station Dushanbe - near the epicenter area - often shown the phenomenon of spreading traces of sporadic Es. It is assumed that the duration of manifestation of seismic ionospheric precursors in Du-shanbe τ = 1 - 6 hours may be associated with deformation processes in the Earth's crust and var-ious faults, as well as dissimilar properties of the environment of the epicentral area. It has been shown that for earthquakes with 4.5 ≤ M ≤ 5.5 1-2 days prior to the event iono-spheric perturbations in the parameters of the sporadic layer Es and an increase in the value of the range of semitransparency Es - ΔfEs were observed, which could lead to turbulence at altitudes of 100-130 km.

  4. Highly efficient tandem organic light-emitting devices utilizing the connecting structure based on n-doped electron-transport layer/HATCN/hole-transport layer.

    PubMed

    Wu, Yi-Lin; Chen, Chien-Yu; Huang, Yi-Hsiang; Lu, Yin-Jui; Chou, Cheng-Hsu; Wu, Chung-Chih

    2014-08-01

    In this work, we conducted studies of tandem organic light-emitting devices (OLEDs) based on the connecting structure consisting of n-doped electron-transport layer (n-ETL)/1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN)/hole-transport layer. We investigated effects of different n-ETL materials and different HATCN thicknesses on characteristics of tandem OLEDs. Results show that the tandem OLEDs with n-BPhen and a 20 nm layer of HATCN in the connecting structure exhibited the best performance. With these, highly efficient and bright green phosphorescent two-emitting-unit tandem OLEDs, with drive voltages significantly lower than twice that of the single-unit benchmark device and current efficiencies higher than twice that of the single-unit benchmark device, were demonstrated. PMID:25090347

  5. Perfectly Matched Layers versus discrete transparent boundary conditions in quantum device simulations

    SciTech Connect

    Mennemann, Jan-Frederik Jüngel, Ansgar

    2014-10-15

    Discrete transparent boundary conditions (DTBC) and the Perfectly Matched Layers (PML) method for the realization of open boundary conditions in quantum device simulations are compared, based on the stationary and time-dependent Schrödinger equation. The comparison includes scattering state, wave packet, and transient scattering state simulations in one and two space dimensions. The Schrödinger equation is discretized by a second-order Crank–Nicolson method in case of DTBC. For the discretization with PML, symmetric second-, fourth-, and sixth-order spatial approximations as well as Crank–Nicolson and classical Runge–Kutta time-integration methods are employed. In two space dimensions, a ring-shaped quantum waveguide device is simulated in the stationary and transient regime. As an application, a simulation of the Aharonov–Bohm effect in this device is performed, showing the excitation of bound states localized in the ring region. The numerical experiments show that the results obtained from PML are comparable to those obtained using DTBC, while keeping the high numerical efficiency and flexibility as well as the ease of implementation of the former method. -- Highlights: •In-depth comparison between discrete transparent boundary conditions (DTBC) and PML. •First 2-D transient scattering state simulations using DTBC. •First 2-D transient scattering state simulations of the Aharonov–Bohm effect.

  6. Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

    NASA Astrophysics Data System (ADS)

    Li, Xu; Lu, Yue; Guan, Li; Li, Jiantao; Wang, Yichao; Dong, Guoyi; Tang, Aiwei; Teng, Feng

    2016-09-01

    Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.

  7. A study of the effects of Lebu devices on turbulent boundary layer drag

    NASA Technical Reports Server (NTRS)

    Falco, R. E.

    1983-01-01

    Initial measurements of the changes in local skin friction, velocity profile shape, and turbulence structure which result from the placement of tandem plates parallel to the wall in the outer region of thick turbulent boundary layers were made. Using a tunnel with a .75 m x 1.2 m x 7.3 m test section, which diverged so as to keep the pressure gradient less than 2x1000/ft, on the test wall, a skin friction reduction of approximately 30% was measured at xi/h = 62. This relaxed to a reduction of approximately 16% at xi/h = 124 for h/delta M = .6. The c sub f measurements for both the normal and modified boundary layers were obtained by measuring the slope of the velocity profile within the linear sublayer. Visual results indicated a continued presence of strong large eddy structure downstream of the devices. Local skin friction reduction of 12% at xi/h = 62 was also obtained with the manipulators above the boundary layer at y/delta m = 1.1.

  8. Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer

    NASA Astrophysics Data System (ADS)

    Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan

    2014-01-01

    Gate-all-around (GAA) nanowire (NW) memory devices with a SiN- or Hf-based charge-trapping (CT) layer of the same thickness were studied in this work. The GAA NW devices were fabricated with planar thin-film transistors (TFTs) on the same substrate using a novel scheme without resorting to the use of advanced lithographic tools. Owing to their higher dielectric constant, the GAA NW devices with a HfO2 or HfAlO CT layer show greatly enhanced programming/erasing (P/E) efficiency as compared with those with a SiN CT layer. Furthermore, the incorporation of Al into the Hf-based dielectric increases the thermal stability of the CT layer, improving retention and endurance characteristics.

  9. Initial experience with implantation of novel dual layer flow-diverter device FRED

    PubMed Central

    Sagan, Leszek; Safranow, Krzysztof; Rać, Monika

    2013-01-01

    Flow-diverting stents can help treat complex and wide-necked cerebral aneurysms. The aim of the study was to evaluate initial experiences related to the safety and effectiveness of eight aneurysms treated with a new dual layer coverage designed flow-diverter device. In 2012 Fred flow-diverter devices were used to treat 8 unruptured wide neck (dome-neck ratio ≤ 1.5) and sidewall aneurysms in 6 patients. All aneurysms were located in the anterior circulation on the internal carotid artery (ICA). In 4 larger aneurysms (> 10 mm) one 3D coil in association with Fred was used to reduce potential incidence of postoperative subarachnoid haemorrhage (SAH). Dual antiplatelet therapy was administered before the procedure and continued for 3 months after it. Clinical parameters, aneurysm features and 3-month follow-up angiograms are presented. All 6 patients with 8 aneurysms were successfully stented with the Fred flow-diverter device and were discharged in generally good condition on dual-antiplatelet therapy. No complications were related to the procedure. In 5 cases digital subtraction angiography (DSA) control examination was performed after 3 months, showing complete occlusion of the aneurysms with patency of the parent artery. In 1 case thrombosis of the Fred occurred but without any clinical consequences because of cross-flow from the other side. Use of the Fred flow-diverter device was efficacious in all 8 treated cerebral aneurysms. The system seems to be promising as a flow diverter with certain characteristics, which allow for easy delivery and implantation. Further clinical evaluation with a larger group of patients is needed. PMID:24130644

  10. Transfer Printed P3HT/PCBM Photoactive Layers: From Material Intermixing to Device Characteristics.

    PubMed

    Abdellah, Alaa; Falco, Aniello; Schwarzenberger, Ulrich; Scarpa, Giuseppe; Lugli, Paolo

    2016-02-01

    The fabrication of organic electronic devices involving complex stacks of solution-processable functional materials has proven challenging. Significant material intermixing often occurs as a result of cross-solubility and postdeposition treatments, rendering the realization of even the simplest bilayer architectures rather cumbersome. In this study we investigate the feasibility of a dry transfer printing process for producing abrupt bilayer organic photodiodes (OPDs) and the effect of thermal annealing on the integrity of the bilayer. The process involves the transfer of readily deposited thin films of poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) using a polydimethylsiloxane (PDMS) stamp. Fabricated structures are characterized by means of cross-sectional scanning electron microscopy (SEM), UV/vis absorption spectroscopy, and time-of-flight secondary ion mass spectrometry (TOF-SIMS). Joint consideration of all results unveils abrupt interfaces with no thermal treatment applied and significant material intermixing for samples annealed above 100 °C. The role of the thermally assisted intermixing in determining the performance of complete devices is evaluated through the comparison of J-V characteristics and external quantum efficiencies (EQEs) of identical photodiodes subject to different annealing conditions. It is shown that the performance of such devices approaches the one of bulk heterojunction photodiodes upon thermal annealing at 140 °C for 5 min. Our results demonstrate that transfer printing is a reliable and simple process for the realization of functional multilayers, paving the way for organic electronic devices incorporating complex stacks. It further contributes to a fundamental understanding of material composition within photoactive layers by elucidating the process of thermally assisted intermixing. PMID:26754413

  11. Initial experience with implantation of novel dual layer flow-diverter device FRED.

    PubMed

    Poncyljusz, Wojciech; Sagan, Leszek; Safranow, Krzysztof; Rać, Monika

    2013-09-01

    Flow-diverting stents can help treat complex and wide-necked cerebral aneurysms. The aim of the study was to evaluate initial experiences related to the safety and effectiveness of eight aneurysms treated with a new dual layer coverage designed flow-diverter device. In 2012 Fred flow-diverter devices were used to treat 8 unruptured wide neck (dome-neck ratio ≤ 1.5) and sidewall aneurysms in 6 patients. All aneurysms were located in the anterior circulation on the internal carotid artery (ICA). In 4 larger aneurysms (> 10 mm) one 3D coil in association with Fred was used to reduce potential incidence of postoperative subarachnoid haemorrhage (SAH). Dual antiplatelet therapy was administered before the procedure and continued for 3 months after it. Clinical parameters, aneurysm features and 3-month follow-up angiograms are presented. All 6 patients with 8 aneurysms were successfully stented with the Fred flow-diverter device and were discharged in generally good condition on dual-antiplatelet therapy. No complications were related to the procedure. In 5 cases digital subtraction angiography (DSA) control examination was performed after 3 months, showing complete occlusion of the aneurysms with patency of the parent artery. In 1 case thrombosis of the Fred occurred but without any clinical consequences because of cross-flow from the other side. Use of the Fred flow-diverter device was efficacious in all 8 treated cerebral aneurysms. The system seems to be promising as a flow diverter with certain characteristics, which allow for easy delivery and implantation. Further clinical evaluation with a larger group of patients is needed. PMID:24130644

  12. Non-volatile memory devices with redox-active diruthenium molecular compound.

    PubMed

    Pookpanratana, S; Zhu, H; Bittle, E G; Natoli, S N; Ren, T; Richter, C A; Li, Q; Hacker, C A

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a 'click' reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The 'click' reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. PMID:26871549

  13. Non-volatile memory devices with redox-active diruthenium molecular compound

    NASA Astrophysics Data System (ADS)

    Pookpanratana, S.; Zhu, H.; Bittle, E. G.; Natoli, S. N.; Ren, T.; Richter, C. A.; Li, Q.; Hacker, C. A.

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

  14. Research Update: The electronic structure of hybrid perovskite layers and their energetic alignment in devices

    NASA Astrophysics Data System (ADS)

    Olthof, Selina

    2016-09-01

    In recent years, the interest in hybrid organic-inorganic perovskites has increased at a rapid pace due to their tremendous success in the field of thin film solar cells. This area closely ties together fundamental solid state research and device application, as it is necessary to understand the basic material properties to optimize the performances and open up new areas of application. In this regard, the energy levels and their respective alignment with adjacent charge transport layers play a crucial role. Currently, we are lacking a detailed understanding about the electronic structure and are struggling to understand what influences the alignment, how it varies, or how it can be intentionally modified. This research update aims at giving an overview over recent results regarding measurements of the electronic structure of hybrid perovskites using photoelectron spectroscopy to summarize the present status.

  15. Fabrication of single electron tunneling devices using layered structures of high- Tc superconducting materials

    NASA Astrophysics Data System (ADS)

    Kim, S.-J.; Yamashita, T.

    2006-10-01

    We have fabricated the submicron structures using high-Tc superconducting materials of Bi2Sr2CuO6+δ (Bi-2201). The stacks of layered structures are made by focused-ion-beam (FIB) etching methods. The fabricated 3D three terminal devices consist of source, drain and gate electrodes on the same chip. A gate electrode is capacitively coupled to a central island between two ultra-small tunnel junctions with in plane area S = 0.25 μm2 in series. Two stacks including an island structure show a Coulomb blockade region of 15 mV at zero gate potential. The effects are not smeared out by thermal fluctuations until temperatures greater than 150 K are reached.

  16. Charge generation layers for all-solution processed organic tandem light emitting diodes with regular device architecture

    NASA Astrophysics Data System (ADS)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Colsmann, Alexander

    2015-10-01

    We present multi-photon OLEDs where enhanced light emission was achieved by stacking two OLEDs utilizing a regular device architecture (top cathode) and an intermediate charge carrier generation layer (CGL) for monolithic device interconnection. With respect to future printing processes for organic optoelectronic devices, all functional layers were deposited from solution. The CGL comprises a low-work function zinc oxide layer that was applied from solution under ambient conditions and at moderate processing temperatures and a high-work function interlayer that was realized from various solution processable precursor-based metal oxides, like molybdenum-, vanadium- and tungsten-oxide. Since every injected electron-hole pair generates two photons, the luminance and the current efficiency of the tandem OLED at a given device current are doubled while the power efficiency remains constant. At a given luminance, the lower operating current in the tandem device reduces electrical stress and improves the device life-time. ToF-SIMS, TEM/FIB and EDX analyses provided evidence of a distinct layer sequence without intermixing upon solution deposition.

  17. Release of MEMS devices with hard-baked polyimide sacrificial layer

    NASA Astrophysics Data System (ADS)

    Boroumand Azad, Javaneh; Rezadad, Imen; Nath, Janardan; Smith, Evan; Peale, Robert E.

    2013-03-01

    Removal of polyimides used as sacrificial layer in fabricating MEMS devices can be challenging after hardbaking, which may easily result by the end of multiple-step processing. We consider the specific commercial co-developable polyimide ProLift 100 (Brewer Science). Excessive heat hardens this material, so that during wet release in TMAH based solvents, intact sheets break free from the substrate, move around in the solution, and break delicate structures. On the other hand, dry reactive-ion etching of hard-baked ProLift is so slow, that MEMS structures are damaged from undesirably-prolonged physical bombardment by plasma ions. We found that blanket exposure to ultraviolet light allows rapid dry etch of the ProLift surrounding the desired structures without damaging them. Subsequent removal of ProLift from under the devices can then be safely performed using wet or dry etch. We demonstrate the approach on PECVD-grown silicon-oxide cantilevers of 100 micron × 100 micron area supported 2 microns above the substrate by ~100-micron-long 8-micron-wide oxide arms.

  18. Superconducting electromechanical rotating device having a liquid-cooled, potted, one layer stator winding

    DOEpatents

    Dombrovski, Viatcheslav V.; Driscoll, David I.; Shovkhet, Boris A.

    2001-01-01

    A superconducting electromechanical rotating (SER) device, such as a synchronous AC motor, includes a superconducting field winding and a one-layer stator winding that may be water-cooled. The stator winding is potted to a support such as the inner radial surface of a support structure and, accordingly, lacks hangers or other mechanical fasteners that otherwise would complicate stator assembly and require the provision of an unnecessarily large gap between adjacent stator coil sections. The one-layer winding topology, resulting in the number of coils being equal to half the number of slots or other mounting locations on the support structure, allows one to minimize or eliminate the gap between the inner radial ends of adjacent straight sections of the stator coilswhile maintaining the gap between the coil knuckles equal to at least the coil width, providing sufficient room for electrical and cooling element configurations and connections. The stator winding may be potted to the support structure or other support, for example, by a one-step VPI process relying on saturation of an absorbent material to fill large gaps in the stator winding or by a two-step process in which small gaps are first filled via a VPI or similar operation and larger gaps are then filled via an operation that utilizes the stator as a portion of an on-site mold.

  19. Material properties and field-effect transistor characteristics of hybrid organic/graphene active layers

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun; Lee, Jongho; Chowdhury, Sk. Fahad; Akinwande, Deji; Dodabalapur, Ananth

    2012-10-01

    We report on the material properties and device characteristics of field-effect transistors (FETs) consisting of hybrid mono-layer graphene/organic semiconductor active layers. By capping with selected organic and polymeric layers, transformation of the electronic characteristics of mono-layer graphene FETs was observed. The off-state current is reduced while the on-state current and field-effect mobility are either unaffected or increased after depositing π-conjugated organic semiconductors. Significantly, capping mono-layer graphene FETs with fluoropolymer improved the on-off current ratio from 5 to 10 as well as increased the field-effect mobility by factor of two compared to plain graphene FETs. Removal of π-conjugated organic semiconductors or fluoropolymer from graphene FETs results in a return to the original electronic properties of mono-layer graphene FETs. This suggests that weak reversible electronic interactions between graphene and π-conjugated organic semiconductors/fluoropolymer favorably tune the material and electrical characteristics of mono-layer graphene.

  20. Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material

    NASA Astrophysics Data System (ADS)

    Brown, Alexander Earl

    Modern detector materials used for infrared (IR) imaging purposes contain complex multi-layered architectures, making more robust characterization techniques necessary. In order to determine mutli-carrier transport properties in the presence of mixed conduction, variable-field Hall characterization can be performed and then analyzed using mobility spectrum analysis to extract parameters of interest. Transport parameters are expected to aid in modeling and simulation of materials and can be used in optimization of particular problem areas. The performances of infrared devices ultimately depend on transport mechanisms, so an accurate determination becomes paramount. This work focuses on the characterization of two materials at the forefront of IR detectors; incumbent, tried and true, HgCdTe technologies and emergent III-V based superlattice structures holding much promise for future detector purposes. Ex-situ doped long-wave planar devices and in-situ doped mid-wave dual-layer heterojunctions (P+/n architecture) HgCdTe structures are explored with regards to substrate choice, namely lattice-matched CdZnTe and lattice-mismatched Si or GaAs. A detailed study of scattering mechanisms reveal that growth on lattice-mismatched substrates leads to dislocation scattering limited mobility at low temperature, correlating with extrinsically limited minority carrier lifetime and excesses diode tunneling current, resulting in overall lower performance. Mobility spectrum analysis proves to be an effective diagnostic on performance as well as providing insight in surface, substrate-interface, and minority carrier transport. Two main issues limiting performance of III-V based superlattices are addressed; high residual doping backgrounds and surface passivation. Mobility spectrum analysis proves to be a reliable method of determining background doping levels. Modest improvements are obtained via post-growth thermal annealing, but results suggest future efforts should be placed upon

  1. Multi-Sensor Fusion for Enhanced Contextual Awareness of Everyday Activities with Ubiquitous Devices

    PubMed Central

    Guiry, John J.; van de Ven, Pepijn; Nelson, John

    2014-01-01

    In this paper, the authors investigate the role that smart devices, including smartphones and smartwatches, can play in identifying activities of daily living. A feasibility study involving N = 10 participants was carried out to evaluate the devices' ability to differentiate between nine everyday activities. The activities examined include walking, running, cycling, standing, sitting, elevator ascents, elevator descents, stair ascents and stair descents. The authors also evaluated the ability of these devices to differentiate indoors from outdoors, with the aim of enhancing contextual awareness. Data from this study was used to train and test five well known machine learning algorithms: C4.5, CART, Naïve Bayes, Multi-Layer Perceptrons and finally Support Vector Machines. Both single and multi-sensor approaches were examined to better understand the role each sensor in the device can play in unobtrusive activity recognition. The authors found overall results to be promising, with some models correctly classifying up to 100% of all instances. PMID:24662406

  2. Increasing physical activity through mobile device interventions: A systematic review.

    PubMed

    Muntaner, Adrià; Vidal-Conti, Josep; Palou, Pere

    2016-09-01

    Physical inactivity is a health problem that affects people worldwide and has been identified as the fourth largest risk factor for overall mortality (contributing to 6% of deaths globally). Many researchers have tried to increase physical activity levels through traditional methods without much success. Thus, many researchers are turning to mobile technology as an emerging method for changing health behaviours. This systematic review sought to summarise and update the existing scientific literature on increasing physical activity through mobile device interventions, taking into account the methodological quality of the studies. The articles were identified by searching the PubMed, SCOPUS and SPORTDiscus databases for studies published between January 2003 and December 2013. Studies investigating efforts to increase physical activity through mobile phone or even personal digital assistant interventions were included. The search results allowed the inclusion of 11 studies that gave rise to 12 publications. Six of the articles included in this review reported significant increases in physical activity levels. The number of studies using mobile devices for interventions has increased exponentially in the last few years, but future investigations with better methodological quality are needed to draw stronger conclusions regarding how to increase physical activity through mobile device interventions. PMID:25649783

  3. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

    SciTech Connect

    Entani, Shiro Naramoto, Hiroshi; Sakai, Seiji

    2015-05-07

    Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

  4. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

    NASA Astrophysics Data System (ADS)

    Entani, Shiro; Naramoto, Hiroshi; Sakai, Seiji

    2015-05-01

    Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

  5. Active flow control of subsonic flow in an adverse pressure gradient using synthetic jets and passive micro flow control devices

    NASA Astrophysics Data System (ADS)

    Denn, Michael E.

    Several recent studies have shown the advantages of active and/or passive flow control devices for boundary layer flow modification. Many current and future proposed air vehicles have very short or offset diffusers in order to save vehicle weight and create more optimal vehicle/engine integration. Such short coupled diffusers generally result in boundary layer separation and loss of pressure recovery which reduces engine performance and in some cases may cause engine stall. Deployment of flow control devices can alleviate this problem to a large extent; however, almost all active flow control devices have some energy penalty associated with their inclusion. One potential low penalty approach for enhancing the diffuser performance is to combine the passive flow control elements such as micro-ramps with active flow control devices such as synthetic jets to achieve higher control authority. The goal of this dissertation is twofold. The first objective is to assess the ability of CFD with URANS turbulence models to accurately capture the effects of the synthetic jets and micro-ramps on boundary layer flow. This is accomplished by performing numerical simulations replicating several experimental test cases conducted at Georgia Institute of Technology under the NASA funded Inlet Flow Control and Prediction Technologies Program, and comparing the simulation results with experimental data. The second objective is to run an expanded CFD matrix of numerical simulations by varying various geometric and other flow control parameters of micro-ramps and synthetic jets to determine how passive and active control devices interact with each other in increasing and/or decreasing the control authority and determine their influence on modification of boundary layer flow. The boundary layer shape factor is used as a figure of merit for determining the boundary layer flow quality/modification and its tendency towards separation. It is found by a large number of numerical experiments and

  6. Multi-band terahertz active device with complementary metamaterial

    SciTech Connect

    Qiao, Shen; Zhang, Yaxin Sun, Linlin; Sun, Han; Xu, Gaiqi; Zhao, Yuncheng; Yang, Ziqiang; Liang, Shixiong

    2015-09-28

    We describe a multi-band terahertz-active device using a composite structure made of complementary metamaterial and doped silicon that can be dynamically controlled. This special complementary metamaterial exhibits three resonances that produce three pass-bands. The pass-bands can be uniformly manipulated by exploiting the photoinduced characteristics of the doped silicon. Simulations were performed to analyze the magnetic field and surface current distributions. The simulation results agree well with experimental results obtained from terahertz time-domain spectroscopy. Using an 808-nm-wavelength laser beam, a modulation depth of up to 80% was obtained. In numerical simulations, we used a conductivity mode to characterize photoinduction. The development of multi-band terahertz-active devices has many potential applications, for example, in filters, modulators, switches, and sensors.

  7. Methyl blue dyed polyethylene oxide films: Optical and electrochemical characterization and application as a single layer organic device

    NASA Astrophysics Data System (ADS)

    Kamath, Archana; Raghu, S.; Devendrappa, H.

    2016-01-01

    A single layer organic device employing methyl blue (MB) dyed polyethylene oxide (PEO) film has been fabricated and studied. The cyclic voltammetry was used to estimate the redox potential and energy band diagram of the device. The polymer film with highest concentration of the dye in PEO (PMB2%) possessing highest conductivity exhibited energy band gap of 2.62 eV with HOMO and LUMO values of 5.34 and 2.72 eV respectively. Based on cyclic voltammetry data, the electron affinity, ionization potential and energy band diagram of the device are discussed.

  8. Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

    PubMed

    Huang, Fei; Wu, Hongbin; Cao, Yong

    2010-07-01

    Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references). PMID:20571672

  9. Improved performance of polymer solar cells using PBDTT-F-TT:PC71BM blend film as active layer

    NASA Astrophysics Data System (ADS)

    Zang, Yue; Gao, Xiumin; Lu, Xinmiao; Xin, Qing; Lin, Jun; Zhao, Jufeng

    2016-07-01

    A detailed study of high-efficiency polymer solar cells (PSCs) based on a low bandgap polymer PBDTT-F-TT and PC71BM as the bulk heterojunction (BHJ) layer is carried out. By using 1,8-diiodooctane (DIO) as solvent additive to control the morphology of active layer and comparing different device architecture to optimize the optical field distribution, the power conversion efficiency (PCE) of the resulted devices can be reached as high as 9.34%. Comprehensive characterization and optical modeling of the resulting devices is performed to understand the effect of DIO and device geometry on photovoltaic performance. It was found that the addition of DIO can significantly improve the nanoscale morphology and increased electron mobility in the BHJ layer. The inverted device architecture was chosen because the results from optical modeling shows that it offers better optical field distribution and exciton generation profile. Based on these results, a low-temperature processed ZnO was finally introduced as an electron transport layer to facility the fabrication on flexible substrates and showed comparable performance with the device based on conventional ZnO interlayer prepared by sol-gel process.

  10. Toward Efficient Thick Active PTB7 Photovoltaic Layers Using Diphenyl Ether as a Solvent Additive.

    PubMed

    Zheng, Yifan; Goh, Tenghooi; Fan, Pu; Shi, Wei; Yu, Junsheng; Taylor, André D

    2016-06-22

    The development of thick organic photovoltaics (OPV) could increase absorption in the active layer and ease manufacturing constraints in large-scale solar panel production. However, the efficiencies of most low-bandgap OPVs decrease substantially when the active layers exceed ∼100 nm in thickness (because of low crystallinity and a short exciton diffusion length). Herein, we report the use of solvent additive diphenyl ether (DPE) that facilitates the fabrication of thick (180 nm) active layers and triples the power conversion efficiency (PCE) of conventional thienothiophene-co-benzodithiophene polymer (PTB7)-based OPVs from 1.75 to 6.19%. These results demonstrate a PCE 20% higher than those of conventional (PTB7)-based OPV devices using 1,8-diiodooctane. Morphology studies reveal that DPE promotes the formation of nanofibrillar networks and ordered packing of PTB7 in the active layer that facilitate charge transport over longer distances. We further demonstrate that DPE improves the fill factor and photocurrent collection by enhancing the overall optical absorption, reducing the series resistance, and suppressing bimolecular recombination. PMID:27253271

  11. Wireless device for activation of an underground shock wave absorber

    NASA Astrophysics Data System (ADS)

    Chikhradze, M.; Akhvlediani, I.; Bochorishvili, N.; Mataradze, E.

    2011-10-01

    The paper describes the mechanism and design of the wireless device for activation of energy absorber for localization of blast energy in underground openings. The statistics shows that the greatest share of accidents with fatal results associate with explosions in coal mines due to aero-methane and/or air-coal media explosion. The other significant problem is terrorist or accidental explosions in underground structures. At present there are different protective systems to reduce the blast energy. One of the main parts of protective Systems is blast Identification and Registration Module. The works conducted at G. Tsulukidze Mining Institute of Georgia enabled to construct the wireless system of explosion detection and mitigation of shock waves. The system is based on the constant control on overpressure. The experimental research continues to fulfill the system based on both threats, on the constant control on overpressure and flame parameters, especially in underground structures and coal mines. Reaching the threshold value of any of those parameters, the system immediately starts the activation. The absorber contains a pyrotechnic device ensuring the discharge of dispersed water. The operational parameters of wireless device and activation mechanisms of pyrotechnic element of shock wave absorber are discussed in the paper.

  12. Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

    PubMed

    Wang, Lin; Chen, Xiaolong; Wang, Yang; Wu, Zefei; Li, Wei; Han, Yu; Zhang, Mingwei; He, Yuheng; Zhu, Chao; Fung, Kwok Kwong; Wang, Ning

    2013-02-01

    We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers. PMID:23263255

  13. Nanorod measurement-layer separate structure for nanorod-character measurement, simulation, and application as sensor devices

    NASA Astrophysics Data System (ADS)

    Leem, Myoung-Kun; Park, Jin-Uk; Kim, Chang-Man; Kim, Kyu-Jin; Yeom, Se-Hyuk; Choi, Woo-Youp; Kang, Won-Seok; Kim, Jae-Ho; Kang, Shin-Won

    2009-02-01

    This paper reported the simple nanorod characteristic measurement method by layer separated structure. The structures are designed by the ANSYS simulation and they are fabricated by semiconductor fabrications. In the experiment, dielectrophoresis (DEP) principle is used to assemble nanorods which are synthesized by electrochemical deposition (ECD) method. However, it is difficult to make devices without assembly process because nanorods which are synthesized by the ECD method are dispersed in the medium. Therefore, this paper was studied to design and fabricate the nanorod assembly-layer and measurement-layer separation. After assembling the nanorods, I-V characteristics of the nanorods were measured.

  14. Driving voltage reduction in white organic light-emitting devices from selectively doping in ambipolar blue-emitting layer

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Hung; Lin, Chi-Feng; Lee, Jiun-Haw

    2007-11-01

    White organic light-emitting devices (OLEDs) consisting of ambipolar 9,10-bis(2'-naphthyl) anthracene (ADN) as a host of blue-emitting layer (EML) were investigated. A thin codoped layer of yellow 5,6,11,12-Tetraphenylnaphthacene (rubrene) served as a probe for detecting the position of maximum recombination rate in the 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) doped-ADN EML. Due to the energy barrier and bipolar carrier transport, the maximum recombination rate was found to be close to but not exactly at the interface of the hole-transporting layer and the EML. With appropriate tuning in the thickness, position, and dopant concentrations of the codoped layer (rubrene:DPAVBi:ADN) in the EML, the device driving voltage decreased by 21.7%, nearly 2 V in reduction, due to the increased recombination current from the faster exciton relaxation induced by the yellow dopants. Among the advantages of introducing the codoped layer over conventional single-doped layers are the elimination of the trapping effect to avoid increasing the device driving voltage, the alleviation of the dependence of the recombination zone on the applied voltage for improving color stability, and the utilization of excitons in a more efficient way to enhance device efficiency. Without using any electrically conductive layers such as the p-i-n structure, we were able to successfully generate 112 cd/m2 at 4 V from our white OLED simply by engineering the structure of the EML.

  15. Coupled Chemisorption and Physisorption of Oxygen on Single Layer Graphene Devices

    NASA Astrophysics Data System (ADS)

    Wen, Hua; Swartz, Adrian; O'Hara, Dante; Odenthal, Patrick; Chen, Jen-Ru; Kawakami, Roland

    2014-03-01

    We investigate adsorption of molecular oxygen on single layer graphene devices and demonstrate that chemisorption of molecular oxygen at low temperatures is strongly coupled to the physisorption process. Through low temperature adsorption and variable-temperature desorption studies, we establish the ability to use electrical measurements to separately identify the physisorption and chemisorption of oxygen on graphene: chemisorption is identified by a change in Dirac point voltage, while physisorption is identified through its increase of the mobility. By utilizing the electrostatic gate controlled chemisorption, we demonstrate that the chemisorption at low temperatures is driven by a two-step process in which free oxygen molecules are first captured onto graphene by physisorption, and then the oxygen undergoes a physisorption-to-chemisorption conversion. Our study provides a better understanding of the effect of gas adsorbates on graphene and could be useful in future applications of graphene-based gas sensors. We acknowledge the support from NRI-NSF (NEB-1124601), NSF (DMR-1007057) and ONR (N00014-12-1-0469).

  16. A dedicated compression device for high resolution X-ray tomography of compressed gas diffusion layers

    NASA Astrophysics Data System (ADS)

    Tötzke, C.; Manke, I.; Gaiselmann, G.; Bohner, J.; Müller, B. R.; Kupsch, A.; Hentschel, M. P.; Schmidt, V.; Banhart, J.; Lehnert, W.

    2015-04-01

    We present an experimental approach to study the three-dimensional microstructure of gas diffusion layer (GDL) materials under realistic compression conditions. A dedicated compression device was designed that allows for synchrotron-tomographic investigation of circular samples under well-defined compression conditions. The tomographic data provide the experimental basis for stochastic modeling of nonwoven GDL materials. A plain compression tool is used to study the fiber courses in the material at different compression stages. Transport relevant geometrical parameters, such as porosity, pore size, and tortuosity distributions, are exemplarily evaluated for a GDL sample in the uncompressed state and for a compression of 30 vol.%. To mimic the geometry of the flow-field, we employed a compression punch with an integrated channel-rib-profile. It turned out that the GDL material is homogeneously compressed under the ribs, however, much less compressed underneath the channel. GDL fibers extend far into the channel volume where they might interfere with the convective gas transport and the removal of liquid water from the cell.

  17. A dedicated compression device for high resolution X-ray tomography of compressed gas diffusion layers

    SciTech Connect

    Tötzke, C.; Manke, I.; Banhart, J.; Gaiselmann, G.; Schmidt, V.; Bohner, J.; Müller, B. R.; Kupsch, A.; Hentschel, M. P.; Lehnert, W.

    2015-04-15

    We present an experimental approach to study the three-dimensional microstructure of gas diffusion layer (GDL) materials under realistic compression conditions. A dedicated compression device was designed that allows for synchrotron-tomographic investigation of circular samples under well-defined compression conditions. The tomographic data provide the experimental basis for stochastic modeling of nonwoven GDL materials. A plain compression tool is used to study the fiber courses in the material at different compression stages. Transport relevant geometrical parameters, such as porosity, pore size, and tortuosity distributions, are exemplarily evaluated for a GDL sample in the uncompressed state and for a compression of 30 vol.%. To mimic the geometry of the flow-field, we employed a compression punch with an integrated channel-rib-profile. It turned out that the GDL material is homogeneously compressed under the ribs, however, much less compressed underneath the channel. GDL fibers extend far into the channel volume where they might interfere with the convective gas transport and the removal of liquid water from the cell.

  18. Thin silicon layer SOI power device with linearly-distance fixed charge islands

    NASA Astrophysics Data System (ADS)

    Yuan, Zuo; Haiou, Li; Jianghui, Zhai; Ning, Tang; Shuxiang, Song; Qi, Li

    2015-05-01

    A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed (LFI LDMOS). A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to the higher concentration of the drift region and a lower on-resistance. The numerical results indicate that the breakdown voltage of 500 V with Ld = 45 μm is obtained in the proposed device in comparison to 209 V of conventional LDMOS, while maintaining low on-resistance. Project supported by the Guangxi Natural Science Foundation of China (No. 2013GXNSFAA019335), the Guangxi Department of Education Project (No.201202ZD041), the China Postdoctoral Science Foundation Project (Nos. 2012M521127, 2013T60566), and the National Natural Science Foundation of China (Nos. 61361011, 61274077, 61464003).

  19. Simulation of the scrape-off layer region of tokamak devices

    NASA Astrophysics Data System (ADS)

    Ricci, Paolo

    2015-04-01

    Understanding the key processes occurring in the tokamak scrape-off layer (SOL) is becoming of the outmost importance while we enter the ITER era and we move towards the conception of future fusion reactors. By controlling the heat exhaust, by playing an important role in determining the overall plasma confinement, and by regulating the impurity level in tokamak core, the dynamics of the fusion fuel in the SOL is, in fact, related to some of the most crucial issues that the fusion program is facing today. Because of the limited diagnostic access and in view of predicting the SOL dynamics in future devices, simulations are becoming crucial to address the physics of this region. The present paper, which summarizes the lecture on SOL simulations that was given during the 7th ITER international school (August 25-29, 2014, Aix-en-Provence, France), provides a brief overview of the simulation approaches to the SOL dynamics. First, disentangling the complexity of the system, the key physics processes occurring in the SOL are described. Then, the different simulation approaches to the SOL dynamics are presented, from first-principles kinetic and fluid models, to the phenomenological analysis.

  20. Expandable device type III for easy and reliable approximation of dissection layers in sutureless aortic anastomosis. Ex vivo experimental study.

    PubMed

    Nazari, Stefano

    2010-02-01

    In past years, we developed expandable devices (type I and II) for sutureless aortic anastomosis. We have now further modified the device (type III) incorporating a second expandable ring, external to the main one, which can be operated contrariwise in such a way that the aortic wall (i.e. the dissection layers) is compressed between the two expandable rings, providing full control on both the layers compression pressure and the anastomosis final diameter. The device was evaluated in ex vivo experimental models of swine aortic arch fresh samples; air-tight sealing at increasing endovascular pressures was also evaluated and compared with sealing achieved by standard suturing. Ex vivo data suggest that the present version of the device can be used easily and quickly also in elliptical, asymmetric 'oblique' anastomosis as when concavity arch is involved. Perfect air-tight sealing of the anastomosis was verified at endovascular pressures up to 150 mmHg, while standard suture cannot withstand even minimal endovascular air pressure. Compared to the previous versions, the present device is less bulky and softer, can be used also for concavity arch resection and provides full and standardizable control on dissection layers stable and sealed approximation. PMID:19933306

  1. Design of Bicontinuous Donor/Acceptor Morphologies for Use as Organic Solar Cell Active Layers

    NASA Astrophysics Data System (ADS)

    Kipp, Dylan; Mok, Jorge; Verduzco, Rafael; Ganesan, Venkat

    Two of the primary challenges limiting the marketability of organic solar cells are i) the smaller device efficiency of the organic solar cell relative to the conventional silicon-based solar cell and ii) the long term thermal instability of the device active layer. The achievement of equilibrium donor/acceptor morphologies with the characteristics believed to yield high device performance characteristics could address each of these two challenges. In this work, we present the results of a combined simulations and experiments-based approach to investigate if a conjugated BCP additive can be used to control the self-assembled morphologies taken on by conjugated polymer/PCBM mixtures. First, we use single chain in mean field Monte Carlo simulations to identify regions within the conjugated polymer/PCBM composition space in which addition of copolymers can lead to bicontinuous equilibrium morphologies with high interfacial areas and nanoscale dimensions. Second, we conduct experiments as directed by the simulations to achieve such morphologies in the PTB7 + PTB7- b-PNDI + PCBM model blend. We characterize the results of our experiments via a combination of transmission electron microscopy and X-ray scattering techniques and demonstrate that the morphologies from experiments agree with those predicted in simulations. Accordingly, these results indicate that the approach utilized represents a promising approach to intelligently design the morphologies taken on by organic solar cell active layers.

  2. Toxin activity assays, devices, methods and systems therefor

    DOEpatents

    Koh, Chung-Yan; Schaff, Ulrich Y.; Sommer, Gregory Jon

    2016-04-05

    Embodiments of the present invention are directed toward devices, system and method for conducting toxin activity assay using sedimentation. The toxin activity assay may include generating complexes which bind to a plurality of beads in a fluid sample. The complexes may include a target toxin and a labeling agent, or may be generated due to presence of active target toxin and/or labeling agent designed to be incorporated into complexes responsive to the presence of target active toxin. The plurality of beads including the complexes may be transported through a density media, wherein the density media has a lower density than a density of the beads and higher than a density of the fluid sample, and wherein the transporting occurs, at least in part, by sedimentation. Signal may be detected from the labeling agents of the complexes.

  3. Light-induced self-assembly of active rectification devices

    PubMed Central

    Stenhammar, Joakim; Wittkowski, Raphael; Marenduzzo, Davide; Cates, Michael E.

    2016-01-01

    Self-propelled colloidal objects, such as motile bacteria or synthetic microswimmers, have microscopically irreversible individual dynamics—a feature they share with all living systems. The incoherent behavior of individual swimmers can be harnessed (or “rectified”) by microfluidic devices that create systematic motions that are impossible in equilibrium. We present a computational proof-of-concept study showing that such active rectification devices could be created directly from an unstructured “primordial soup” of light-controlled motile particles, solely by using spatially modulated illumination to control their local propulsion speed. Alongside both microscopic irreversibility and speed modulation, our mechanism requires spatial symmetry breaking, such as a chevron light pattern, and strong interactions between particles, such as volume exclusion, which cause a collisional slowdown at high density. Together, we show how these four factors create a novel, many-body rectification mechanism. Our work suggests that standard spatial light modulator technology might allow the programmable, light-induced self-assembly of active rectification devices from an unstructured particle bath. PMID:27051883

  4. Light-induced self-assembly of active rectification devices.

    PubMed

    Stenhammar, Joakim; Wittkowski, Raphael; Marenduzzo, Davide; Cates, Michael E

    2016-04-01

    Self-propelled colloidal objects, such as motile bacteria or synthetic microswimmers, have microscopically irreversible individual dynamics-a feature they share with all living systems. The incoherent behavior of individual swimmers can be harnessed (or "rectified") by microfluidic devices that create systematic motions that are impossible in equilibrium. We present a computational proof-of-concept study showing that such active rectification devices could be created directly from an unstructured "primordial soup" of light-controlled motile particles, solely by using spatially modulated illumination to control their local propulsion speed. Alongside both microscopic irreversibility and speed modulation, our mechanism requires spatial symmetry breaking, such as a chevron light pattern, and strong interactions between particles, such as volume exclusion, which cause a collisional slowdown at high density. Together, we show how these four factors create a novel, many-body rectification mechanism. Our work suggests that standard spatial light modulator technology might allow the programmable, light-induced self-assembly of active rectification devices from an unstructured particle bath. PMID:27051883

  5. Development of a mechanical mover device by compositing hydrogen storage alloy thin films with a perfluorosulfonic acid layer

    NASA Astrophysics Data System (ADS)

    Ogasawara, Takashi; Uchida, Haru-Hisa; Nishi, Yoshitake

    2007-01-01

    Perfluorosulfonic Acid (PFSA) film, commonly used in the Polymer Electrolyte Fuel Cells (PEFC), indicates conductance of proton and permeability of H IIO. In this study a mechanical composite mover device with this PFSA and hydrogen storage alloy (HSA) thin films was made up for expecting the movement driven by volume change in the course of hydrogen migration between PFSA and HSA layers. Hydrogen storage alloy, such as LaNi 5 indicates as much as 25% of volume change in the course of H II absorption in gas phase. Using this characteristics, a mechanical mover device was made of PFSA film of an electrolyte polymer sandwiched by hydrogen storage alloy thin films with Au-Pd intermediate layers. The mover device was operated by migrating hydrogen ions from the PFSA layer to the HSA layer, which were generated by electrolysis of H IIO in a PFSA layer. Electrical potential was given from the outsides lead wires. All experiments were carried out in the water. We confirmed large interesting movement generated by migration of hydrogen ion by applying electric potentials.

  6. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    SciTech Connect

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  7. An implantable active-targeting micelle-in-nanofiber device for efficient and safe cancer therapy.

    PubMed

    Yang, Guang; Wang, Jie; Wang, Yi; Li, Long; Guo, Xing; Zhou, Shaobing

    2015-02-24

    Nanocarriers have attracted broad attention in cancer therapy because of their ability to carry drugs preferentially into cancer tissue, but their application is still limited due to the systemic toxicity and low delivery efficacy of intravenously delivered chemotherapeutics. In this study, we develop a localized drug delivery device with combination of an active-targeting micellar system and implantable polymeric nanofibers. This device is achieved first by the formation of hydrophobic doxorubicin (Dox)-encapsulated active-targeting micelles assembled from a folate-conjugated PCL-PEG copolymer. Then, fabrication of the core-shell polymeric nanofibers is achieved with coaxial electrospinning in which the core region consists of a mixture of poly(vinyl alcohol) and the micelles and the outer shell layer consists of cross-linked gelatin. In contrast to the systematic administration of therapeutics via repeatedly intravenous injections of micelles, this implantable device has these capacities of greatly reducing the drug dose, the frequency of administration and side effect of chemotherapeutic agents while maintaining highly therapeutic efficacy against artificial solid tumors. This micelle-based nanofiber device can be developed toward the next generation of nanomedicine for efficient and safe cancer therapy. PMID:25602381

  8. Active terahertz device based on optically controlled organometal halide perovskite

    NASA Astrophysics Data System (ADS)

    Zhang, Bo; Lv, Longfeng; He, Ting; Chen, Tianji; Zang, Mengdi; Zhong, Liang; Wang, Xinke; Shen, Jingling; Hou, Yanbing

    2015-08-01

    An active all-optical high-efficiency broadband terahertz device based on an organometal halide perovskite (CH3NH3PbI3, MAPbI3)/inorganic (Si) structure is investigated. Spectrally broadband modulation of the THz transmission is obtained in the frequency range from 0.2 to 2.6 THz, and a modulation depth of nearly 100% can be achieved with a low-level photoexcitation power (˜0.4 W/cm2). Both THz transmission and reflection were suppressed in the MAPbI3/Si structure by an external continuous-wave (CW) laser. Enhancement of the charge carrier density at the MAPbI3/Si interface is crucial for photo-induced absorption. The results show that the proposed high-efficiency broadband optically controlled terahertz device based on the MAPbI3/Si structure has been realized.

  9. Single- and bi-layer memristive devices with tunable properties using TiO{sub x} switching layers deposited by reactive sputtering

    SciTech Connect

    Jiang, Hao; Xia, Qiangfei

    2014-04-14

    The authors systematically studied reactive sputtering deposition of TiO{sub x} thin films using a mixture of Ar and O{sub 2} gases under different ratios of O{sub 2} flow. As directly revealed by X-ray photoelectron spectroscopy, the deposition changed from a metallic Ti target mode to an oxide target mode when the O{sub 2} flow ratio was beyond 40%, resulting in TiO{sub x} thin films with different chemical compositions. Consequently, metal/oxide/metal devices with a single TiO{sub x} layer exhibited a broad spectrum of electrical characteristics such as Ohmic, rectifying, and memristive behavior. The reactive sputtering deposited TiO{sub x} thin films were also used in a bilayer memristive device structure, and a transition from bipolar to unipolar switching behavior was observed for devices based on thin films prepared with different oxygen flow.

  10. Local and Sustained Activity of Doxycycline Delivered with Layer-by-Layer Microcapsules.

    PubMed

    Luo, Dong; Gould, David J; Sukhorukov, Gleb B

    2016-04-11

    Achieving localized delivery of small molecule drugs has the potential to increase efficacy and reduce off target and side effects associated with systemic distribution. Herein, we explore the potential use of layer-by-layer (LbL) assembled microcapsules for the delivery of doxycycline. Absorbance of doxycycline onto core dextran sulfate of preassembled microcapsules provides an efficient method to load both synthetic and biodegradable microcapsules with the drug. Application of an outer layer lipid coat enhances the sustained in vitro release of doxycycline from both microcapsule types. To monitor doxycycline delivery in a biological system, C2C12 mouse myoblasts are engineered to express EGFP under the control of the optimized components of the tetracycline regulated gene expression system. Microcapsules are not toxic to these cells, and upon delivery to the cells, EGFP is more efficiently induced in those cells that contain engulfed microcapsules and monitored EGFP expression clearly demonstrates that synthetic microcapsules with a DPPC coat are the most efficient for sustain intracellular delivery. Doxycycline released from microcapsules also displayed sustained activity in an antimicrobial growth inhibition assay compared with doxycycline solution. This study reveals the potential for LbL microcapsules in small molecule drug delivery and their feasible use for achieving prolonged doxycycline activity. PMID:26967921

  11. The Use of Multiple Slate Devices to Support Active Reading Activities

    ERIC Educational Resources Information Center

    Chen, Nicholas Yen-Cherng

    2012-01-01

    Reading activities in the classroom and workplace occur predominantly on paper. Since existing electronic devices do not support these reading activities as well as paper, users have difficulty taking full advantage of the affordances of electronic documents. This dissertation makes three main contributions toward supporting active reading…

  12. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Kane, D.L.

    1986-01-01

    In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. During the ablation period, runoff dominates the hydrologic cycle. Some meltwater goes to rewetting the organic soils in the active layer. The remainder is lost primarily because of evaporation, since transpiration is not a very active process at this time. Following the snowmelt period, evapotranspiration becomes the dominate process, with base flow contributing the other watershed losses. It is important to note that the water initally lost by evapotranspiration entered the organic layer during melt. This water from the snowpack ensures that each year the various plant communities will have sufficient water to start a new summer of growth.

  13. Layered shielding design for an active neutron interrogation system

    NASA Astrophysics Data System (ADS)

    Whetstone, Zachary D.; Kearfott, Kimberlee J.

    2016-08-01

    The use of source and detector shields in active neutron interrogation can improve detector signal. In simulations, a shielded detector with a source rotated π/3 rad relative to the opening decreased neutron flux roughly three orders of magnitude. Several realistic source and detector shield configurations were simulated. A layered design reduced neutron and secondary photon flux in the detector by approximately one order of magnitude for a deuterium-tritium source. The shield arrangement can be adapted for a portable, modular design.

  14. a Spatio-Temporal Framework for Modeling Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Touyz, J.; Streletskiy, D. A.; Nelson, F. E.; Apanasovich, T. V.

    2015-07-01

    The Arctic is experiencing an unprecedented rate of environmental and climate change. The active layer (the uppermost layer of soil between the atmosphere and permafrost that freezes in winter and thaws in summer) is sensitive to both climatic and environmental changes, and plays an important role in the functioning, planning, and economic activities of Arctic human and natural ecosystems. This study develops a methodology for modeling and estimating spatial-temporal variations in active layer thickness (ALT) using data from several sites of the Circumpolar Active Layer Monitoring network, and demonstrates its use in spatial-temporal interpolation. The simplest model's stochastic component exhibits no spatial or spatio-temporal dependency and is referred to as the naïve model, against which we evaluate the performance of the other models, which assume that the stochastic component exhibits either spatial or spatio-temporal dependency. The methods used to fit the models are then discussed, along with point forecasting. We compare the predicted fit of the various models at key study sites located in the North Slope of Alaska and demonstrate the advantages of space-time models through a series of error statistics such as mean squared error, mean absolute and percent deviance from observed data. We find the difference in performance between the spatio-temporal and remaining models is significant for all three error statistics. The best stochastic spatio-temporal model increases predictive accuracy, compared to the naïve model, of 33.3%, 36.2% and 32.5% on average across the three error metrics at the key sites for a one-year hold out period.

  15. Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

    SciTech Connect

    Momblona, C.; Malinkiewicz, O.; Soriano, A.; Gil-Escrig, L.; Bandiello, E.; Scheepers, M.; Bolink, H. J.; Edri, E.

    2014-08-01

    Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging from 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.

  16. Charge transport in organic multi-layer devices under electric and optical fields

    NASA Astrophysics Data System (ADS)

    Park, June Hyoung

    2007-12-01

    Charge transport in small organic molecules and conjugated conducting polymers under electric or optical fields is studied by using field effect transistors and photo-voltaic cells with multiple thin layers. With these devices, current under electric field, photo-current under optical field, and luminescence of optical materials are measured to characterize organic and polymeric materials. For electric transport studies, poly(3,4-ethylenedioxythiophene) doped by polystyrenesulfonic acid is used, which is conductive with conductivity of approximately 25 S/cm. Despite their high conductance, field effect transistors based on the films are successfully built and characterized by monitoring modulations of drain current by gate voltage and IV characteristic curves. Due to very thin insulating layers of poly(vinylphenol), the transistors are relative fast under small gate voltage variation although heavy ions are involved in charge transport. In IV characteristic curves, saturation effects can be observed. Analysis using conventional field effect transistor model indicates high mobility of charge carriers, 10 cm2/V·sec, which is not consistent with the mobility of the conducting polymer. It is proposed that the effect of a small density of ions injected via polymer dielectric upon application of gate voltage and the ion compensation of key hopping sites accounts for the operation of the field effect transistors. For the studies of transport under optical field, photovoltaic cells with 3 different dendrons, which are efficient to harvest photo-excited electrons, are used. These dendrons consist of two electron-donors (tetraphenylporphyrin) and one electron-accepter (naphthalenediimide). Steady-state fluorescence measurements show that inter-molecular interaction is dominant in solid dendron film, although intra-molecular interaction is still present. Intra-molecular interaction is suggested by different fluorescence lifetimes between solutions of donor and dendrons. This

  17. Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance

    NASA Astrophysics Data System (ADS)

    Senokos, E.; Reguero, V.; Palma, J.; Vilatela, J. J.; Marcilla, Rebeca

    2016-02-01

    In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m2 g-1, high electrical conductivity (3.5 × 105 S m-1) and mechanical properties in the high-performance range including toughness (35 J g-1) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg-1 and 14 Wh kg-1, respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10 000 cycles of charge-discharge at 3.5 V.In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through

  18. Improved performance of organic light-emitting devices with plasma treated ITO surface and plasma polymerized methyl methacrylate buffer layer

    NASA Astrophysics Data System (ADS)

    Lim, Jae-Sung; Shin, Paik-Kyun

    2007-02-01

    Transparent indium-tin-oxide (ITO) anode surface was modified using O 3 plasma and organic ultra-thin buffer layers were deposited on the ITO surface using 13.56 MHz rf plasma polymerization technique. A plasma polymerized methyl methacrylate (ppMMA) ultra-thin buffer layer was deposited between the ITO anode and hole transporting layer (HTL). The plasma polymerization of the buffer layer was carried out at a homemade capacitively coupled plasma (CCP) equipment. N, N'-Diphenyl- N, N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxy-quinolinato)aluminum (Alq 3) as both emitting layer (EML)/electron transporting layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Electroluminescence (EL) efficiency, operating voltage and stability of the organic light-emitting devices (OLEDs) were investigated in order to study the effect of the plasma surface treatment of the ITO anode and role of plasma polymerized methyl methacrylate as an organic ultra-thin buffer layer.

  19. Active fiber optic technologies used as tamper-indicating devices

    SciTech Connect

    Horton, P.R.V.; Waddoups, I.G.

    1995-11-01

    The Sandia National Laboratories (SNL) Safeguards and Seals Evaluation Program is evaluating new fiber optic active seal technologies for use at Department of Energy (DOE) facilities. The goal of the program is to investigate active seal technologies that can monitor secured containers storing special nuclear materials (SNM) within DOE vaults. Specifically investigated were active seal technologies that can be used as tamper-indicating devices to monitor secured containers within vaults while personnel remain outside the vault area. Such a system would allow minimal access into vaults while ensuring container content accountability. The purpose of this report is to discuss tamper-indicating devices that were evaluated for possible DOE use. While previous seal evaluations (Phase I and II) considered overall facility applications, this discussion focuses specifically on their use in vault storage situations. The report will highlight general background information, specifications and requirements, and test procedures. Also discussed are the systems available from four manufacturers: Interactive Technologies, Inc., Fiber SenSys, Inc., Inovonics, Inc., and Valve Security Systems.

  20. Laminated active matrix organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Liu, Hongyu; Sun, Runguang

    2008-02-01

    Laminated active matrix organic light-emitting device (AMOLED) realizing top emission by using bottom-emitting organic light-emitting diode (OLED) structure was proposed. The multilayer structure of OLED deposited in the conventional sequence is not on the thin film transistor (TFT) backplane but on the OLED plane. The contact between the indium tin oxide (ITO) electrode of TFT backplane and metal cathode of OLED plane is implemented by using transfer electrode. The stringent pixel design for aperture ratio of the bottom-emitting AMOLED, as well as special technology for the top ITO electrode of top-emitting AMOLED, is unnecessary in the laminated AMOLED.

  1. Active control of excessive sound emission on a mobile device.

    PubMed

    Jeon, Se-Woon; Youn, Dae Hee; Park, Young-cheol; Lee, Gun-Woo

    2015-04-01

    During a phone conversation, loud vocal emission from the far-end to the near-end space can disturb nearby people. In this paper, the possibility of actively controlling such unwanted sound emission using a control source placed on the mobile device is investigated. Two different approaches are tested: Global control, minimizing the potential energy measured along a volumetric space surface, and local control, minimizing the squared sound pressure at a discrete point on the phone. From the test results, both approaches can reduce the unwanted sound emission by more than 6 dB in the frequency range up to 2 kHz. PMID:25920885

  2. Epsilon-near-zero mode for active optoelectronic devices.

    PubMed

    Vassant, S; Archambault, A; Marquier, F; Pardo, F; Gennser, U; Cavanna, A; Pelouard, J L; Greffet, J J

    2012-12-01

    The electromagnetic modes of a GaAs quantum well between two AlGaAs barriers are studied. At the longitudinal optical phonon frequency, the system supports a phonon polariton mode confined in the thickness of the quantum well that we call epsilon-near-zero mode. This epsilon-near-zero mode can be resonantly excited through a grating resulting in a very large absorption localized in the single quantum well. We show that the reflectivity can be modulated by applying a voltage. This paves the way to a new class of active optoelectronic devices working in the midinfrared and far infrared at ambient temperature. PMID:23368264

  3. Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance.

    PubMed

    Senokos, E; Reguero, V; Palma, J; Vilatela, J J; Marcilla, Rebeca

    2016-02-14

    In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m(2) g(-1), high electrical conductivity (3.5 × 10(5) S m(-1)) and mechanical properties in the high-performance range including toughness (35 J g(-1)) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg(-1) and 14 Wh kg(-1), respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10,000 cycles of charge-discharge at 3.5 V. PMID:26809811

  4. Vibration control of cylindrical shells using active constrained layer damping

    NASA Astrophysics Data System (ADS)

    Ray, Manas C.; Chen, Tung-Huei; Baz, Amr M.

    1997-05-01

    The fundamentals of controlling the structural vibration of cylindrical shells treated with active constrained layer damping (ACLD) treatments are presented. The effectiveness of the ACLD treatments in enhancing the damping characteristics of thin cylindrical shells is demonstrated theoretically and experimentally. A finite element model (FEM) is developed to describe the dynamic interaction between the shells and the ACLD treatments. The FEM is used to predict the natural frequencies and the modal loss factors of shells which are partially treated with patches of the ACLD treatments. The predictions of the FEM are validated experimentally using stainless steel cylinders which are 20.32 cm in diameter, 30.4 cm in length and 0.05 cm in thickness. The cylinders are treated with ACLD patches of different configurations in order to target single or multi-modes of lobar vibrations. The ACLD patches used are made of DYAD 606 visco-elastic layer which is sandwiched between two layers of PVDF piezo-electric films. Vibration attenuations of 85% are obtained with maximum control voltage of 40 volts. Such attenuations are attributed to the effectiveness of the ACLD treatment in increasing the modal damping ratios by about a factor of four over those of conventional passive constrained layer damping (PCLD) treatments. The obtained results suggest the potential of the ACLD treatments in controlling the vibration of cylindrical shells which constitute the major building block of many critical structures such as cabins of aircrafts, hulls of submarines and bodies of rockets and missiles.

  5. Infrared micro-thermography of an actively heated preconcentrator device

    NASA Astrophysics Data System (ADS)

    Furstenberg, Robert; Kendziora, C. A.; Stepnowski, Stanley V.; Mott, David R.; McGill, R. Andrew

    2008-03-01

    We report infrared micro-thermography measurements and analysis of static and transient temperature maps of an actively heated micro-fabricated preconcentrator device that incorporates a dual serpentine platinum heater trace deposited on a perforated polyimide membrane and suspended over a silicon frame. The sorbent coated perforated membrane is used to collect vapors and gases that flow through the preconcentrator. After heating, a concentrated pulse of analyte is released into the detector. Due to its small thermal mass, precise thermal management of the preconcentrator is critical to its performance. The sizes of features, the semi-transparent membrane, the need to flow air through the device, and changes in surface emissivity on a micron scale present many challenges for traditional infrared micro-thermography. We report an improved experimental test-bed. The hardware incorporates a custom-designed miniature calibration oven which, in conjunction with spatial filtering and a simple calibration algorithm, allows accurate temperature maps to be obtained. The test-bed incorporates a micro-bolometer array as the infrared imager. Instrumentation design, calibration and image processing algorithms are discussed and analyzed. The procedure does not require prior knowledge of the emissivity. We show that relatively inexpensive uncooled bolometers arrays can be used in certain radiometric applications. Heating profiles were examined with both uniform and non-uniform air flow through the device. The conclusions from this study provide critical information for optimal integration of the preconcentrator within a detection system, and in the design of the heater trace layout to achieve a more even temperature distribution across the device.

  6. Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

    DOEpatents

    Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

    2016-07-26

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.

  7. Activated oil sands fluid coke for electrical double-layer capacitors

    NASA Astrophysics Data System (ADS)

    Zuliani, Jocelyn E.; Kirk, Donald W.; Jia, Charles Q.; Tong, Shitang

    2014-12-01

    Electrochemical capacitors are important energy storage devices that have high power density, rapid charging cycles and are highly cyclable. In this study, activated fluid coke has demonstrated high surface area, improved capacitive properties, and high energy density. Fluid coke is a by-product generated from continuous high temperature bitumen upgrading, resulting in the formation of nearly spherical particles with concentric carbon layers. The residual sulphur impurities in fluid coke may enhance its energy storage performance. The activated coke samples have high specific surface areas, up to 1960 m2 g-1, and show promising capacitive performance, in 4 M KOH electrolyte, with high gravimetric and specific capacitances of 228-257 F g-1 and 13-14 μF cm-2, respectively. These results are comparable to other top performing activated carbon materials [1-3]. The activated fluid coke maintains high performance at fast charging rates, greater than 160 F g-1 at a current density of 7500 mA g-1. Activated fluid coke's high capacitance and promising rate performance are potentially associated with its unique layered, and the moderate sulphur content in the chemical structure. Activated fluid coke is a unique opportunity to use a limited use by-product to generate activated carbon that has a high surface area and promising energy storage properties.

  8. Impact of magnetic topology on radial electric field profile in the scrape-off layer of the Large Helical Device

    NASA Astrophysics Data System (ADS)

    Suzuki, Y.; Ida, K.; Kamiya, K.; Yoshinuma, M.; Tsuchiya, H.; Kobayashi, M.; Kawamura, G.; Ohdachi, S.; Sakakibara, S.; Watanabe, K. Y.; Hudson, S.; Feng, Y.; Yamada, I.; Yasuhara, R.; Tanaka, K.; Akiyama, T.; Morisaki, T.; The LHD Experiment Group

    2016-09-01

    The radial electric field in the plasma edge is studied in the Large Helical Device (LHD) experiments. When magnetic field lines become stochastic or open at the plasma edge and connected to the vessel, electrons are lost faster than ions along these field lines. Then, a positive electric field appears in the plasma edge. The radial electric field profile can be used to detect the effective plasma boundary. Magnetic topology is an important issue in stellarator and tokamak research because the 3D boundary has the important role of controlling MHD edge stability with respect to ELMs, and plasma detachment. Since the stochastic magnetic field layer can be controlled in the LHD by changing the preset vacuum magnetic axis, this device is a good platform to study the properties of the radial electric field that appear with the different stochastic layer width. Two magnetic configurations with different widths of the stochastic layer as simulated in vacuum are studied for low-β discharges. It has been found that a positive electric field appeared outside of the last closed flux surface. In fact the positions of the positive electric field are found in the boundary between of the stochastic layer and the scrape-off layer. To understand where is the boundary of the stochastic layer and the scrape-off layer, the magnetic field lines are analyzed statistically. The variance of the magnetic field lines in the stochastic layer is increased outwards for both configurations. However, the skewness, which means the asymmetry of the distribution of the magnetic field line, increases for only one configuration. If the skewness is large, the connection length becomes effectively short. Since that is consistent with the experimental observation, the radial electric field can be considered as an index of the magnetic topology.

  9. Surface activation of CNT Webs towards layer by layer assembly of biosensors.

    PubMed

    Musameh, Mustafa; Huynh, Chi P; Hickey, Mark; Kyratzis, Ilias Louis

    2016-04-25

    Several surface activation methods such as chemical, electrochemical and plasma have been used for enhancing the electrochemical performance of carbon based electrodes for various applications. However, some of these surface activation methods may not be useful depending on the chemical and physical properties of the activated surface. Herein we investigate the surface activation of carbon nanotube (CNT) webs by electrochemical and plasma techniques to enhance their electrochemical performance and enable the fabrication of a biosensor using the layer-by-layer (LBL) approach. The pretreated CNT webs were characterized by SEM, TEM, Raman, XPS and electrochemical methods. TEM images and Raman analysis showed an increase in the level of surface defects upon pretreatment with higher number of defects after electrochemical pretreatment. XPS analysis showed an increase in the level of oxygen functional groups after pretreatment (4 to 5 times increase) which resulted in enhanced water wettability especially for plasma pretreated CNT webs. The pretreated CNT web electrodes also showed an enhanced electrochemical activity towards the oxidation and reduction of different redox probes with higher sensitivity for the electrochemically pretreated CNT web electrode that was accompanied by a higher level of noise in amperometric measurements. A highly linear response was obtained for the untreated and the electrochemically pretreated CNT web electrodes towards the amperometric detection of NADH (R(2) of 0.9996 and 0.9986 respectively) while a non-linear response was observed for the plasma pretreated CNT web electrode (R(2) of 0.8538). The pretreated CNT web electrodes enabled the fabrication of a LBL biosensor for alcohol detection with highest operational stability obtained for the plasma pretreated CNT web surface. PMID:26818435

  10. Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

    PubMed

    Courtright, Brett A E; Jenekhe, Samson A

    2015-12-01

    We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability. PMID:26550983

  11. Inferring Human Activity in Mobile Devices by Computing Multiple Contexts

    PubMed Central

    Chen, Ruizhi; Chu, Tianxing; Liu, Keqiang; Liu, Jingbin; Chen, Yuwei

    2015-01-01

    This paper introduces a framework for inferring human activities in mobile devices by computing spatial contexts, temporal contexts, spatiotemporal contexts, and user contexts. A spatial context is a significant location that is defined as a geofence, which can be a node associated with a circle, or a polygon; a temporal context contains time-related information that can be e.g., a local time tag, a time difference between geographical locations, or a timespan; a spatiotemporal context is defined as a dwelling length at a particular spatial context; and a user context includes user-related information that can be the user’s mobility contexts, environmental contexts, psychological contexts or social contexts. Using the measurements of the built-in sensors and radio signals in mobile devices, we can snapshot a contextual tuple for every second including aforementioned contexts. Giving a contextual tuple, the framework evaluates the posteriori probability of each candidate activity in real-time using a Naïve Bayes classifier. A large dataset containing 710,436 contextual tuples has been recorded for one week from an experiment carried out at Texas A&M University Corpus Christi with three participants. The test results demonstrate that the multi-context solution significantly outperforms the spatial-context-only solution. A classification accuracy of 61.7% is achieved for the spatial-context-only solution, while 88.8% is achieved for the multi-context solution. PMID:26343665

  12. High power VCSEL device with periodic gain active region

    NASA Astrophysics Data System (ADS)

    Ning, Y. Q., II; Qin, L.; Sun, Y. F.; Li, T.; Cui, J. J.; Peng, B.; Liu, G. Y.; Zhang, Y.; Liu, Y.; Wang, L. J.; Cui, D. F.; Xu, Z. Y.

    2007-11-01

    High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation, lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure, a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure, with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400μm-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16° were observed with current beyond 4.8A.

  13. Blue organic light-emitting devices with an oxadiazole-containing emitting layer exhibiting excited state intramolecular proton transfer

    NASA Astrophysics Data System (ADS)

    Ma, Dongge; Liang, Fushun; Wang, Lixiang; Lee, S. T.; Hung, L. S.

    2002-05-01

    We report a blue organic light-emitting device having an emissive layer of 2-(2-hydroxyphenyl)-5-phenyl-1,3,4-oxadiazole (HOXD), that exhibits excited state intramolecular proton transfer (ESIPT). The device had a luminance efficiency of 0.8 cd/A and a maximum brightness of 870 cd/ m2. Electroluminescence spectra revealed a dominating peak at 450 nm and two additional peaks at 480 and 515 nm with a full width at half maximum of 50 nm. Our studies indicate that some EL may originate from the triplet excitation state of the enol form of HOXD.

  14. Influence of Dopant Concentration on Electroluminescent Performance of Organic White-Light-Emitting Device with Double-Emissive-Layered Structure

    NASA Astrophysics Data System (ADS)

    Wu, Xiao-Ming; Hua, Yu-Lin; Yin, Shou-Gen; Zhang, Li-Juan; Wang, Yu; Hou, Qing-Chuan; Zhang, Jun-Mei

    2008-01-01

    A novel phosphorescent organic white-light-emitting device (WOLED) with configuration of ITO/NPB/CBP:TBPe:rubrene/Zn(BTZ)2:Ir(piq)2(acac)/Zn(BTZ)2/Mg:Ag is fabricated successfully, where the phosphorescent dye bis (1-(phenyl)isoquinoline) iridium (III) acetylanetonate (Ir(piq)2(acac)) doped into bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTZ)2) (greenish-blue emitting material with electron transport character) as the red emitting layer, and fluorescent dye 2,5,8,11-tetra-tertbutylperylene (TBPe) and 5,6,11,12-tetraphenyl-naphthacene (rubrene) together doped into 4,4'-N,N'-dicarbazole-biphenyl (CBP) (ambipolar conductivity material) as the blue-orange emitting layer, respectively. The two emitting layers are sandwiched between the hole-transport layer N,N'-biphenyl-N, N'-bis (1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) and electron-transport layer (Zn(BTZ)2). The optimum device turns on at the driving voltage of 4.5 V. A maximum external quantum efficiency of 1.53% and brightness 15000 cd/m2 are presented. The best point of the Commission Internationale de l'Eclairage (CIE) coordinates locates at (0.335, 0.338) at about 13 V. Moreover, we also discuss how to achieve the bright pure white light through optimizing the doping concentration of each dye from the viewpoint of energy transfer process.

  15. Catalytically active single-atom niobium in graphitic layers.

    PubMed

    Zhang, Xuefeng; Guo, Junjie; Guan, Pengfei; Liu, Chunjing; Huang, Hao; Xue, Fanghong; Dong, Xinglong; Pennycook, Stephen J; Chisholm, Matthew F

    2013-01-01

    Carbides of groups IV through VI (Ti, V and Cr groups) have long been proposed as substitutes for noble metal-based electrocatalysts in polymer electrolyte fuel cells. However, their catalytic activity has been extremely limited because of the low density and stability of catalytically active sites. Here we report the excellent performance of a niobium-carbon structure for catalysing the cathodic oxygen reduction reaction. A large number of single niobium atoms and ultra small clusters trapped in graphitic layers are directly identified using state-of-the-art aberration-corrected scanning transmission electron microscopy. This structure not only enhances the overall conductivity for accelerating the exchange of ions and electrons, but it suppresses the chemical/thermal coarsening of the active particles. Experimental results coupled with theory calculations reveal that the single niobium atoms incorporated within the graphitic layers produce a redistribution of d-band electrons and become surprisingly active for O2 adsorption and dissociation, and also exhibit high stability. PMID:23715283

  16. Device lifetime improvement of polymer-based bulk heterojunction solar cells by incorporating copper oxide layer at Al cathode

    NASA Astrophysics Data System (ADS)

    Wang, Mingdong; Xie, Fangyan; Xie, Weiguang; Zheng, Shizhao; Ke, Ning; Chen, Jian; Zhao, Ni; Xu, J. B.

    2011-05-01

    Organic solar cells are commonly susceptible to degradation in air. We present that insertion of a thin layer of thermally evaporated copper oxide (CuOx) between the organic active layer and the Al cathode can greatly extend the lifetime of P3HT:PCBM based bulk heterojunction solar cells. The performance can be further improved by applying an interfacial bilayer of CuOx/LiF. Our results suggest that the CuOx functions not only as a charge transport layer but also as a protection layer, which prevents formation of thick organic-Al interdiffusion area. This leads to a more air-resistive cathode/organic interface.

  17. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.

    PubMed

    Nayak, Pradipta K; Caraveo-Frescas, J A; Wang, Zhenwei; Hedhili, M N; Wang, Q X; Alshareef, H N

    2014-01-01

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350 °C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

  18. Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

    PubMed Central

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wang, Zhenwei; Hedhili, M. N.; Wang, Q. X.; Alshareef, H. N.

    2014-01-01

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

  19. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

    DOEpatents

    Aytug, Tolga; Paranthaman, Mariappan Parans; Polat, Ozgur

    2012-07-17

    An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

  20. Method and apparatus for actively controlling a micro-scale flexural plate wave device

    DOEpatents

    Dohner, Jeffrey L.

    2001-01-01

    An actively controlled flexural plate wave device provides a micro-scale pump. A method of actively controlling a flexural plate wave device produces traveling waves in the device by coordinating the interaction of a magnetic field with actively controlled currents. An actively-controlled flexural plate wave device can be placed in a fluid channel and adapted for use as a micro-scale fluid pump to cool or drive micro-scale systems, for example, micro-chips, micro-electrical-mechanical devices, micro-fluid circuits, or micro-scale chemical analysis devices.

  1. Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers

    NASA Astrophysics Data System (ADS)

    Horng, Ray-Hua; Ravadgar, Parvaneh

    2013-03-01

    Single crystal β-Ga2O3 epitaxial layers have been prepared on c-axis (0001) sapphire substrates using metalorganic chemical vapor deposition technique at relatively low temperature. Post-annealing of β-Ga2O3 single crystals up to 800 °C does not affect the crystallinity, explored by x-ray diffraction, showing that β-Ga2O3 epitaxial layers are highly (-201) oriented. Metal-semiconductor-metal devices are fabricated on single crystals to study their photoresponsivity. A significant improvement in performance of post annealed-based devices is observed, attributed to point defect reduction. Annealing of as-grown samples results to a significant decrease in both oxygen and gallium vacancies, which are sources of current leakage.

  2. Origin of photogenerated carrier recombination at the metal-active layer interface in polymer solar cells.

    PubMed

    Kumar, Mukesh; Dubey, Ashish; Reza, Khan Mamun; Adhikari, Nirmal; Qiao, Qiquan; Bommisetty, Venkat

    2015-11-01

    The role of the metal-active layer interface in photogenerated recombination has been investigated using nanoscale current sensing atomic force microscopy (CS-AFM) and intensity modulated photocurrent spectroscopy (IMPS) in as-deposited, pre-annealed and post-annealed bulk heterojunction (BHJ) solar cells. Aluminum (Al) confined post-annealed BHJ solar cells exhibited a significantly improved device efficiency compared to pre-annealed BHJ solar cells having similar photocarrier harvesting ability in the active layer. The nanoscale topography and CS-AFM results indicate a uniform PCBM rich phase at the metal-active layer interface in the post-annealed cells, but PCBM segregation in the pre-annealed cells. These two different annealing processes showed different carrier dynamics revealed using IMPS under various light intensities. The IMPS results suggest reduced photo generated carrier recombination in uniform PCBM rich post-annealed BHJ solar cells. This study reveals the importance of the metal-bend interface in BHJ solar cells in order to obtain efficient charge carrier extraction for high efficiency. PMID:26431263

  3. Active Layer Thermal Response to Stream Water Temperatures

    NASA Astrophysics Data System (ADS)

    Cozzetto, K.; McKnight, D.

    2004-12-01

    The hyporheic zone is comprised of sediments below and adjacent to a stream through which stream water flows in and out. In polar regions, the shape, dimensions, physical and chemical characteristics of this zone are affected by the seasonal freezing and thawing of the active layer. One factor that may influence the active layer temperature regime is stream water temperature, both its absolute value and cyclic variations in its value. Many of the glacial meltwater streams in Taylor Valley in the McMurdo Dry Valleys of Antarctica, exhibit daily temperature patterns with lows of 0 or 1° C and highs of 10 or, on occasion, 15° C. Because the viscosity of water decreases significantly with increasing temperature, these daily maxima may increase infiltration and the exchange of water and heat between the stream and the hyporheic zone. To investigate the influence of stream water temperature and flow paths on the active layer temperature regime and vice versa, two conservative tracer injection experiments were conducted. Both took place in the same 200-meter reach, which was instrumented with temperature and conductivity probes. Both also took place at the same time of day during which the stream reaches its temperature maximum. However, in one experiment snow from a nearby patch was added to the stream to suppress the temperature maximum by 3° C from 10 to 7° C. The temperature data show that the snow addition slowed the rate of hyporheic zone warming and suppressed temperature increases in the hyporheic zone by 1-3° C when compared with the non-perturbation experiment. The electrical conductivity data indicate that during the snow addition experiment, the stream neither gained nor lost water while during the non-perturbation experiment, the stream lost water. These results suggest that the stream water cooling decreased infiltration and heat transfer into the hyporheic zone.

  4. Experiments on the active control of transitional boundary layers

    NASA Astrophysics Data System (ADS)

    Nelson, P. A.; Rioual, J.-L.; Fisher, M. J.

    Experimental results are presented which demonstrate that the streamwise position of the transition region of a flat plate boundary layer can be actively controlled. The means of control is through the application of suction through the surface of the plate, a progressive increase in suction rate being capable of producing transition at progressively larger distances downstream from the plate leading edge. A simple digital feedback regulator based on an integral control law is shown to be most effective in regulating the position of transition, an error signal being derived from measurements of pressure fluctuations on the surface of the plate.

  5. Phase change memory devices formed by using 2 dimensional layered Graphene-In2 Se3 van der Waals heterostructure

    NASA Astrophysics Data System (ADS)

    Choi, Min Sup; Yang, Chenxi; Ra, Chang Ho; Yoo, Won Jong

    Indium selenide (In2Se3) is one of the unique materials which have both a layered structure and phase change property. One of the advantages of using 2 dimensional (2D) materials is their potential to form van der Waals heterostructures which enable unique physical properties and novel quantum device functions, which cannot be achieved in 2D material alone. In this study, we fabricated vertically stacked graphene-In2Se3 heterostructured memory devices. The fabricated devices showed a rapid increase of current conduction, which is attributed to the phase transition of In2Se3. The TEM images demonstrated that In2Se3 transformed from polycrystalline to layered structure thanks to the effective thermal confinement effect between graphene and In2Se3, attributed to the low thermal conductivity of layered materials in vertical direction. In addition, the current conduction could be controlled effectively by applying different pulse voltages, showing stable retention and endurance characteristics. It is thought that the differently bonded states contribute to this control process. This study demonstrates the possibility of Graphene-In2Se3 van der Waals heterostructure as 2D based future memory electronics. This work was supported by the National Research Foundation of Korea(NRF) Grant funded by the Korea government(MEST) (No. 2013R1A2A2A01015516).

  6. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    DOEpatents

    Jie, Qing; Ren, Zhifeng; Chen, Gang

    2015-12-08

    Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

  7. Integrated optical devices using bacteriorhodopsin as active nonlinear optical material

    NASA Astrophysics Data System (ADS)

    Dér, András; Fábián, László; Valkai, Sándor; Wolff, Elmar; Ramsden, Jeremy; Ormos, Pál

    2006-08-01

    Coupling of optical data-processing devices with microelectronics, telecocommunication and sensory functions, is among the biggest challenges in molecular electronics. Intensive research is going on to find suitable nonlinear optical materials that could meet the demanding requirements of optoelectronic applications, especially regarding high sensitivity and stability. In addition to inorganic and organic crystals, biological molecules have also been considered for use in integrated optics, among which the bacterial chromoprotein, bacteriorhodopsin (bR) generated the most interest. bR undergoes enormous absorption and concomitant refractive index changes upon initiation of a cyclic series of photoreactions by a burst of actinic light. This effect can be exploited to create highly versatile all-optical logical elements. We demonstrate the potential of this approach by investigating the static and dynamic response of several basic elements of integrated optical devices. Our results show that, due to its relatively high refractive index changes, bR can be used as an active nonlinear optical material to produce a variety of integrated optical switching and modulation effects.

  8. Active Microfluidic Devices for Single-Molecule Experiments

    NASA Astrophysics Data System (ADS)

    Chen, Hao; Meiners, Jens-Christian

    2003-03-01

    Microfluidic chips have become an increasingly powerful and versatile tool in the life sciences. Multilayer devices fabricated from soft silicone elastomers in a replication molding technique are especially promising, because they permit flexible integration of active elements such as valves and pumps. In addition, they are fairly easy and inexpensive to produce. In a wide range of applications, microfluidic chips are used in conjunction with optical detection and manipulation techniques. However their widespread use has been hampered due to problems with interconnect stability, optical accessibility, and ability to perform surface chemistry. We have developed a packaging technique that encapsulates the elastomer in an epoxy resin of high optical quality. This stabilizes the interconnects so that a chip can be repeatedly plugged in and out of a socket. Our technique also eliminates the need for a baking step that is conventionally used to attach a glass cover slip to the elastomer surface. This allows us to assemble devices that contain a cover slip coated with proteins, thereby permitting subsequent in situ attachment of DNA molecules to the bottom of the flow channels. We demonstrate the utility of our chips in single-molecule applications involving tethered-particles and optical tweezers. Support: NIH R01 GM065934 & Research Corporation

  9. PARduino: A Simple Device Measuring and Logging Photosynthetically Active Radiation

    NASA Astrophysics Data System (ADS)

    Barnard, H. R.; Findley, M. C.

    2013-12-01

    Photosynthetically Active Radiation (PAR, 400 to 700 nm) is one of the primary controls of forest carbon and water relations. In complex terrain, PAR has high spatial-variability. Given the high cost of commercial datalogging equipment, spatially-distributed measurements of PAR have been typically modeled using geographic coordinates and terrain indices. Here, we present a design for a low cost, field-deployable device for measuring and logging PAR built around an Arduino microcontroller (we named it PARduino). PARduino provides for widely distributed sensor arrays and tests the feasibility of using hobbyist-grade electronics for collecting scientific data. PARduino components include a LiCor quantum sensor, EME Systems signal converter/amplifier, and Sparkfun's Arduino Pro Mini microcontroller. Additional components include a real time clock, a microSD flash memory card, and a custom printed circuit board (PCB). We selected the components with an eye towards ease of assembly. Everything can be connected to the PCB using through-hole soldering techniques. Since the device will be deployed in remote research plots that lack easy access to line power, battery life was also a consideration in the design. Extended deployment is possible because PARduino's software keeps it in a low-power sleep mode until ready to make a measurement. PARduino will be open-source hardware for use and improvement by others.

  10. Ultrasonically activated device for parenchymal division during open hepatectomy

    PubMed Central

    Limongelli, P.; Belli, A.; Fantini, C.; D'Agostino, A.; Cioffi, L.; Russo, G.

    2008-01-01

    Background. The use of new technological devices has gained popularity and has been proposed to improve the safety of liver resection. This study was designed to evaluate the usefulness of the ultrasonically activated device (USAD) during open liver resection. Materials and methods. Indication for surgery, type of resection, need to perform a Pringle manoeuvre, operation time, blood loss, number of blood transfusions, morbidity and mortality rate were analyzed in 60 patients undergoing a formal open liver resection by means of USAD. Results. The overall mean operation time was 172 minutes (range 120–255 min); an intermittent warm ischemia was applied in 9 cases (15%). The overall mean blood loss was 410 mL (median 400 mL, range 50–950 ml). A median of one blood transfusion was administered in six patients (10%). The mean hospital stay was 10.2 days (median 11, range 8–16). The overall morbidity rate was 20% (12 out of 60 patients). No in-hospital mortality was recorded. By subdividing the patients according to the presence or absence of cirrhosis no statistical significant differences were found between the two subgroups in all peri-and postoperative outcomes. Conclusions. In conclusion, though there is a lack of data based on well conducted controlled studies and further on a greater number of patients are needed, the utilization of USAD may help to minimize blood loss during liver resection regardless of the condition of the liver, even in case of cirrhosis. PMID:18773104

  11. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Atiya, G.; Cohen-Hyams, Z.; Weindling, S.; Ankonina, G.; Salzman, J.; Kaplan, W. D.; Eisenstein, G.

    2015-10-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  12. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    SciTech Connect

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  13. A Simple Apparatus for the Injection of Lithium Aerosol into the Scrape-Off Layer of Fusion Research Devices

    SciTech Connect

    D. K. Mansfield, A.L Roquemore, H. Schneider, J. Timberlake, H. Kugel, M.G. Bell and the NSTX Research Team

    2010-10-11

    A simple device has been developed to deposit elemental lithium onto plasma facing components in the National Spherical Torus Experiment. Deposition is accomplished by dropping lithium powder into the plasma column. Once introduced, lithium particles quickly become entrained in scrape-off layer flow as an evaporating aerosol. Particles are delivered through a small central aperture in a computer-controlled resonating piezoelectric disk on which the powder is supported. The device has been used to deposit lithium both during discharges as well as prior to plasma breakdown. Clear improvements to plasma performance have been demonstrated. The use of this apparatus provides flexibility in the amount and timing of lithium deposition and, therefore, may benefit future fusion research devices.

  14. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment. PMID:20588585

  15. Conjugated polymer based active electric-controlled terahertz device

    NASA Astrophysics Data System (ADS)

    Zhong, Liang; Zhang, Bo; He, Ting; Lv, Longfeng; Hou, Yanbing; Shen, Jingling

    2016-03-01

    A modulation of terahertz response in a highly efficient, electric-controlled conjugated polymer-silicon hybrid device with low photo-excitation was investigated. The polymer-silicon forms a hybrid structure, where the active depletion region modifies the semiconductor conductivity in real time by applying an external bias voltage. The THz transmission was efficiently modulated by effective controlling. In a THz-TDS system, the modulation depth reached nearly 100% when the applied voltage was 3.8 V at an external laser intensity of 0.3 W/cm2. The saturation voltage decreased with increasing photo-excited intensity. In a THz-CW system, a significant decline in THz transmission was also observed with increasing applied bias voltage. This reduction in THz transmission is induced by the enhancement of carrier density.

  16. Device characteristics of amorphous ZnSnLiO thin film transistors with various channel layer thicknesses

    NASA Astrophysics Data System (ADS)

    Wang, Hailong; Li, Bin; Zhang, Wenqi; Wu, Huaihao; Zhou, Dongzhan; Yao, Zhigang; Yi, Lixin; Zhang, Xiqing; Wang, Yongsheng

    2016-08-01

    The preparation and characteristics of ZnSnLiO thin film transistors were studied in this work. The ZnSnLiO films, as the channel layers with thickness varied from 20 to 60 nm, were deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering. The effect of channel layer thickness on the device characteristics of ZnSnLiO TFTs has been investigated to establish optimal channel layer thickness. The transistor with 40-nm-thick ZnSnLiO film shows the best performance with a field-effect mobility of 47 cm2/V s, a threshold voltage of 4.9 V, and an on/off ratio of 7.2 × 106.

  17. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  18. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  19. Using DNA devices to track anticancer drug activity.

    PubMed

    Kahanda, Dimithree; Chakrabarti, Gaurab; Mcwilliams, Marc A; Boothman, David A; Slinker, Jason D

    2016-06-15

    It is beneficial to develop systems that reproduce complex reactions of biological systems while maintaining control over specific factors involved in such processes. We demonstrated a DNA device for following the repair of DNA damage produced by a redox-cycling anticancer drug, beta-lapachone (β-lap). These chips supported ß-lap-induced biological redox cycle and tracked subsequent DNA damage repair activity with redox-modified DNA monolayers on gold. We observed drug-specific changes in square wave voltammetry from these chips at therapeutic ß-lap concentrations of high statistical significance over drug-free control. We also demonstrated a high correlation of this change with the specific ß-lap-induced redox cycle using rational controls. The concentration dependence of ß-lap revealed significant signal changes at levels of high clinical significance as well as sensitivity to sub-lethal levels of ß-lap. Catalase, an enzyme decomposing peroxide, was found to suppress DNA damage at a NQO1/catalase ratio found in healthy cells, but was clearly overcome at a higher NQO1/catalase ratio consistent with cancer cells. We found that it was necessary to reproduce key features of the cellular environment to observe this activity. Thus, this chip-based platform enabled tracking of ß-lap-induced DNA damage repair when biological criteria were met, providing a unique synthetic platform for uncovering activity normally confined to inside cells. PMID:26901461

  20. Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer.

    PubMed

    Jang, Sung Hwan; Ryu, Ju Tae; Jung, Hyun Soo; Kim, Tae Whan

    2016-02-01

    The switching mechanisms of resistive random access memories (ReRAMs) were strongly related to the formation and rupture of conduction filaments (CFs) in the transition metal oxide (TMO) layer. The novel method approached to enhance the electrical characteristics of ReRAMs by introducing of the local insertion of the low-k dielectric layer inside the TMO layer. Simulation results showed that the insertion of the low-k dielectric layer in the TMO layer reduced the switching volume and the generation of CFs. The large variation of resistive switching properties was caused by the stochastic characteristics of the CFs, which was involved in switching by generation and rupture. The electrical characteristics of the novel ReRAMs exhibited a low reset current of below 20 microA, the high uniformity of the resistive switching, and the narrow variation of the resistance for the high resistance state. PMID:27433626

  1. Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2016-03-01

    We investigated the effects of the distance between incorporated Al layers on the characteristics of thin-film transistors (TFTs) using Al-doped ZnO (AZO) as the active channels. The intervals between the Al layers were controlled by designing the sequences of Al cycles during the atomic-layer deposition. Two configurations were designed as “scatter” or “focus”, in which the incorporated Al layers were dispersed to bottom and top sides or concentrated on the center region. Electrical conductivities of “scatter” and “focus” films were observed to be different. While the dispersed Al layers could work as dopants, a too-close interval between the Al layers suppressed carrier transport, even with the same incorporated Al amounts. These differences were reflected on the device characteristics. The TFT performance of the “scatter” device was better than that of the “focus” device. Consequently, adequately dispersed Al layers in the AZO channel are very important for improving device performance.

  2. Atomic layer epitaxy of group 4 materials: Surface processes, thin films, devices and their characterization

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.; Bedair, S.; El-Masry, N. A.; Glass, J. T.; King, S.

    1994-12-01

    Residual surface contaminants were removed from vicinal 6H-SiC(0001) surfaces in UHV via high temperature annealing in SiH4. Characterization via AES, EELS, LEED, XPS, and UPS was conducted. At T greater than 850 C, the surface oxide was rapidly removed. Exposure to approx. 400 Langmuir (10(exp -6) Torr(dot)liter/s) of SiH4 resulted in complete surface oxide removal and a nearly stoichiometric (l x l) 6H-SiC surface suitable for ALE of SiC. Further exposure resulted in a (3 x 3)R30 deg Si-rich reconstructed surface. Subsequent annealing in UHV resulted in a (square root of 3 x square root of 3)R30 deg Si deficient/graphitic reconstructed surface. The first set of wafers containing HBT device structures were fabricated on SiC films grown via ALE. No transistor activity was detected. Electrical characterization and SEM showed the most likely fault to be inaccurate etching of the SiC emitter. Nucleation and growth of oriented diamond particles on seeded, group of zone axes (0001) oriented single crystal Co substrates was achieved via multi-step, hot-filament CVD process involving seeding, annealing, nucleation and growth. Diamond particles oriented group of zone axes (111) were obtained. Micro-Raman showed a FWHM of 4.3/cm. A very weak graphitic peak was observed on regions of the substrate not covered by the diamond particles. A nucleation model has been proposed. Initial results showed that CeO2 film grows epitaxially on (111) Si substrates. The CeO2 films had density of interfacial traps and fixed oxide charge values comparable to that of amorphous SiO2/Si.

  3. OLED lighting devices having multi element light extraction and luminescence conversion layer

    DOEpatents

    Krummacher, Benjamin Claus; Antoniadis, Homer

    2010-11-16

    An apparatus such as a light source has a multi element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

  4. Numerical Modeling of Active Flow Control in a Boundary Layer Ingesting Offset Inlet

    NASA Technical Reports Server (NTRS)

    Allan, Brian G.; Owens, Lewis R.; Berrier, Bobby L.

    2004-01-01

    This investigation evaluates the numerical prediction of flow distortion and pressure recovery for a boundary layer ingesting offset inlet with active flow control devices. The numerical simulations are computed using a Reynolds averaged Navier-Stokes code developed at NASA. The numerical results are validated by comparison to experimental wind tunnel tests conducted at NASA Langley Research Center at both low and high Mach numbers. Baseline comparisons showed good agreement between numerical and experimental results. Numerical simulations for the inlet with passive and active flow control also showed good agreement at low Mach numbers where experimental data has already been acquired. Numerical simulations of the inlet at high Mach numbers with flow control jets showed an improvement of the flow distortion. Studies on the location of the jet actuators, for the high Mach number case, were conducted to provide guidance for the design of a future experimental wind tunnel test.

  5. Active Flow Control on a Boundary-Layer-Ingesting Inlet

    NASA Technical Reports Server (NTRS)

    Gorton, Susan Althoff; Owens, Lewis R.; Jenkins, Luther N.; Allan, Brian G.; Schuster, Ernest P.

    2004-01-01

    Boundary layer ingestion (BLI) is explored as means to improve overall system performance for Blended Wing Body configuration. The benefits of BLI for vehicle system performance benefit are assessed with a process derived from first principles suitable for highly-integrated propulsion systems. This performance evaluation process provides framework within which to assess the benefits of an integrated BLI inlet and lays the groundwork for higher-fidelity systems studies. The results of the system study show that BLI provides a significant improvement in vehicle performance if the inlet distortion can be controlled, thus encouraging the pursuit of active flow control (AFC) as a BLI enabling technology. The effectiveness of active flow control in reducing engine inlet distortion was assessed using a 6% scale model of a 30% BLI offset, diffusing inlet. The experiment was conducted in the NASA Langley Basic Aerodynamics Research Tunnel with a model inlet designed specifically for this type of testing. High mass flow pulsing actuators provided the active flow control. Measurements were made of the onset boundary layer, the duct surface static pressures, and the mass flow through the duct and the actuators. The distortion was determined by 120 total pressure measurements located at the aerodynamic interface plane. The test matrix was limited to a maximum freestream Mach number of 0.15 with scaled mass flows through the inlet for that condition. The data show that the pulsed actuation can reduce distortion from 29% to 4.6% as measured by the circumferential distortion descriptor DC60 using less than 1% of inlet mass flow. Closed loop control of the actuation was also demonstrated using a sidewall surface static pressure as the response sensor.

  6. A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices

    NASA Astrophysics Data System (ADS)

    Urresti, Jesus; Hidalgo, Salvador; Flores, David; Roig, Jaume; Rebollo, José; Mazarredo, Imanol

    2005-08-01

    A quasi-analytical model addressed to predict the breakdown voltage in four-layer transient voltage suppressor (TVS) diodes based on the punch-through effect is reported in this paper. For breakdown voltage in excess of 1 V, a closed form expression is derived. In addition, the three-layer TVS diode can also be described with the developed model. Finally, results obtained from the model are in good agreement with simulation and experimental data.

  7. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/

    DOEpatents

    Osbourn, G.C.

    1983-10-06

    An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

  8. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  9. An active control system for the turbulent boundary layer

    NASA Astrophysics Data System (ADS)

    Lew, James

    This thesis presents the development process and the experimental results of a system constructed to apply real-time control to the structures of the turbulent boundary layer region in order to reduce surface shear stress. The system is composed of three main components: an array of MEMS surface shear stress, tauw sensors; a MEMS flap actuator; and a control logic which integrates the hardware components together into a closed system. The objective of this system is to reduce the stress contained in streak-like regions of high tauw. The sensor array, used to image the tauw distribution, is an extension of the thermal based tauw sensor developed by Jiang. Numerous studies have been performed using this device, the results of which have validated its performance. For this study, a new temperature compensation methodology, based on the surface temperature of the sensor chip, was employed in order to account for possible temperature variations at the wall surface. The actuator, a pneumatically driven flap, is developed as part of the present research. The device is, in essence, a 3 mm x 1 mm cantilever beam that sits on top of an inflatable diaphragm and is capable of actuation frequencies of over 200 Hz and amplitudes of over .11 mm. When it is oscillated in the open loop mode, the effect over one cycle of motion is an average reduction by as much as 2.5% in tauw in the region immediately downstream. A neural network is employed to identify the streak-like regions of interest. Results have shown that this network is successful in identifying the streak-like regions of interest. The control logic employs this network in a predictive, feed-forward scheme to determine the appropriate actuator response. Offline studies have shown that under optimal conditions, the signature of the streak-like regions can be eliminated. Online results conform well to the offline predictions. While unable to achieve the optimal conditions, online experiments show that the system is capable

  10. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

    PubMed

    Mundle, Rajeh; Carvajal, Christian; Pradhan, Aswini K

    2016-05-17

    ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandgap. ZnO has multiple electronic states that depend on the number of vacancies and the charge state of each vacancy. In addition to the individual electron states, the vacancies have different vibrational states. We developed a high-temperature precursor vapor mask technique using Al2O3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior. The change in the resistance between the high- and low-resistivity states of the memristor with a combination of Al2O3 and TiO2 was approximately 157%. The devices were exposed to laser light from three different laser diodes. The 450 nm laser diode noticeably affected the combined Al2O3 and TiO2 barrier, creating a high-resistivity state with a 2.9% shift under illumination. The high-resistivity state shift under laser illumination indicates defect shifts and the thermodynamic transition of ZnO defects. PMID:27124366

  11. Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

    PubMed Central

    Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

    2016-01-01

    Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems. PMID:27008981

  12. Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

    NASA Astrophysics Data System (ADS)

    Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

    2016-03-01

    Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems.

  13. Laser-Damage-Resistant Photoalignment Layers for High-Peak-Power Liquid Crystal Device Applications

    SciTech Connect

    Marshall, K.L.; Gan, J.; Mitchell, G.; Papernov, S.; Rigatti, A.L.; Schmid, A.W.; Jacobs, S.D.

    2008-10-23

    Large-aperture liquid crystal (LC) devices have been in continuous use since 1995 as polarization control devices in the 40-TW, 351-nm, 60-beam OMEGA Nd:glass laser system at the University of Rochester’s Laboratory for Laser Energetics. The feasibility of using a noncontacting alignment method for high-peak-power LC laser optics by irradiation of a linearly photopolymerizable polymer with polarized UV light was recently investigated. These materials were found to have surprisingly large laser-damage thresholds at 1054 nm, approaching that of bare fused silica (30 to 60 J/cm^2). Their remarkable laser-damage resistance and ease in scalability to large apertures of these photoalignment materials, along with the ability to produce multiple alignment states by photolithographic patterning, opens new doorways for their application in LC devices for optics, photonics, and high-peak-power laser applications.

  14. Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors.

    PubMed

    Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

    2016-01-01

    Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems. PMID:27008981

  15. Characterization of cathode keeper wear by surface layer activation

    NASA Technical Reports Server (NTRS)

    Polk, James E.

    2003-01-01

    In this study, the erosion rates of the discharge cathode keeper in a 30 cm NSTAR configuration ion thruster were measured using a technique known as Surface Layer Activation (SLA). This diagnostic technique involves producing a radioactive tracer in a given surface by bombardment with high energy ions. The decrease in activity of the tracer material may be monitored as the surface is subjected to wear processes and correlated to a depth calibration curve, yielding the eroded depth. Analysis of the activities was achieved through a gamma spectroscopy system. The primary objectives of this investigation were to reproduce erosion data observed in previous wear studies in order to validate the technique, and to determine the effect of different engine operating parameters on erosion rate. The erosion profile at the TH 15 (23 kw) setting observed during the 8200 hour Life Demonstration Test (LDT) was reproduced. The maximum keeper erosion rate at this setting was determined to be 0.085 pm/hr. Testing at the TH 8 (1.4 kw) setting demonstrated lower erosion rates than TH 15, along with a different wear profile. Varying the keeper voltage was shown to have a significant effect on the erosion, with a positive bias with respect to cathode potential decreasing the erosion rate significantly. Accurate measurements were achieved after operating times of only 40 to 70 hours, a significant improvement over other erosion diagnostic methods.

  16. Enhancing electrochemical reaction sites in nickel-cobalt layered double hydroxides on zinc tin oxide nanowires: a hybrid material for an asymmetric supercapacitor device.

    PubMed

    Wang, Xu; Sumboja, Afriyanti; Lin, Mengfang; Yan, Jian; Lee, Pooi See

    2012-11-21

    Conducting nanowires are of particular interest in energy-related research on devices such as supercapacitors, batteries, water splitting electrodes and solar cells. Their direct electrode/current collector contact and highly conductive 1D structure enable conducting nanowires to provide ultrafast charge transportation. In this paper, we report the facile synthesis of nickel cobalt layered double hydroxides (LDHs) on conducting Zn(2)SnO(4) (ZTO) and the application of this material to a supercapacitor. This study also presents the first report of an enhancement of the active faradic reaction sites (electroactive sites) resulting from the heterostructure. This novel material demonstrates outstanding electrochemical performance with a high specific capacitance of 1805 F g(-1) at 0.5 A g(-1), and an excellent rate performance of 1275 F g(-1) can be achieved at 100 A g(-1). Furthermore, an asymmetric supercapacitor was successfully fabricated using active carbon as a negative electrode. This asymmetric device exhibits a high energy density of 23.7 W h kg(-1) at a power density of 284.2 W kg(-1). Meanwhile, a high power density of 5817.2 W kg(-1) can be achieved at an energy density of 9.7 W h kg(-1). More importantly, this device exhibits long-term cycling stability, with 92.7% capacity retention after 5000 cycles. PMID:23076678

  17. Unpinning the Open-Circuit Voltage in Organic Solar Cells through Tuning Ternary Blend Active Layer Morphology

    NASA Astrophysics Data System (ADS)

    Khlyabich, Petr; Thompson, Barry; Loo, Yueh-Lin

    2015-03-01

    The use of ternary, as opposed to binary, blends having complementary absorption in active layers of organic bulk heterojunction solar cells is a simple approach to increase overall light absorption. While the open-circuit voltage (Voc) of such solar cells have generally been shown to be pinned by the smallest energy level difference between the donor and acceptor constituents, there have been materials systems, that when incorporated into active layers of solar cells, exhibit composition dependent and tunable Voc. Herein, we demonstrate that this Voc tunability in ternary blend solar cells is correlated with the morphology of the active layer. Chemical compatibility between the constituents in the blend, as probed by grazing-incidence X-ray diffraction (GIXD) measurements, affords Voc tuning. The constituents need not ``co-crystallize'' limited miscibility between the constituents in the active layers of solar cells affords Voc tunability. Poor physical interactions between the constituent domains within the active layers, on the other hand, result in devices that exhibit an invariant Voc that is pinned by the smallest energy level difference between the donor(s) and the acceptor(s). Our morphological studies thus support the proposed alloying model that was put forth originally.

  18. Improvement in Device Performances of InP-Based HEMTs by Thinning a Barrier Layer

    NASA Astrophysics Data System (ADS)

    Hara, Naoki; Takahashi, Tsuyoshi; Makiyama, Kozo; Ohki, Tosihiro

    The dependences of source resistance, Rs, transconductance, gm, gate capacitance, Cgs, Cgd, and cutoff frequency, fT, of InP-based HEMTs on an InAlAs barrier layer thickness, d, were investigated. We divided Rs into 4 elements and analyzed the effect of thinning a barrier layer. The resistance originated from the large band discontinuity between InAlAs and InGaAs decreased by thinning a barrier layer, while the resistance in the gate-recessed region increased. As a result, InP-based HEMT with d=10 nm showed lowest Rs. On the other hand, gm increased monotonically with d, due to the reduction of the gate to channel distance, and gmint reached to 2.6 S/mm at d=5 nm. We also estimated fT by using small-signal measurements. fT increased with the reduction of d, which results in the improvement in noise characteristics.

  19. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III; James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  20. Reduction in Power Consumption for Full-Color Active Matrix Organic Light-Emitting Devices

    NASA Astrophysics Data System (ADS)

    Kanno, Hiroshi; Hamada, Yuji; Nishimura, Kazuki; Okumoto, Kenji; Saito, Nobuo; Mameno, Kazunobu; Shibata, Kenichi

    2006-09-01

    The active matrix organic light-emitting diode (AMOLED) is expected to serve as next generation flat panels display with the outstanding features of wide viewing angle, vivid images, and quick response. For practical use of full-color AMOLEDs in mobile devices, it is essential to reduce the power consumption, which is generally higher than that of liquid crystal displays (LCDs). For this aim, a red, green, blue, and white (RGBW) pixel format combined with an RGB color filter array (RGBW format) with a common white emission layer (EML) has been developed. We find that the RGBW format can successfully reduce the power consumption of a full-color AMOLED by nearly half that of a conventionally filtered RGB pixel format. This improved power consumption is almost equal to the power consumption of a same-sized LCD. The RGBW format is a promising technique for the further reduction of the power consumption of a full-color AMOLED.

  1. Lithographically patterned thin activated carbon films as a new technology platform for on-chip devices.

    PubMed

    Wei, Lu; Nitta, Naoki; Yushin, Gleb

    2013-08-27

    Continuous, smooth, visibly defect-free, lithographically patterned activated carbon films (ACFs) are prepared on the surface of silicon wafers. Depending on the synthesis conditions, porous ACFs can either remain attached to the initial substrate or be separated and transferred to another dense or porous substrate of interest. Tuning the activation conditions allows one to change the surface area and porosity of the produced carbon films. Here we utilize the developed thin ACF technology to produce prototypes of functional electrical double-layer capacitor devices. The synthesized thin carbon film electrodes demonstrated very high capacitance in excess of 510 F g(-1) (>390 F cm(-3)) at a slow cyclic voltammetry scan rate of 1 mV s(-1) and in excess of 325 F g(-1) (>250 F cm(-3)) in charge-discharge tests at an ultrahigh current density of 45,000 mA g(-1). Good stability was demonstrated after 10,000 galvanostatic charge-discharge cycles. The high values of the specific and volumetric capacitances of the selected ACF electrodes as well as the capacity retention at high current densities demonstrated great potential of the proposed technology for the fabrication of various on-chip devices, such as micro-electrochemical capacitors. PMID:23815346

  2. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device

    NASA Astrophysics Data System (ADS)

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-03-01

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal.

  3. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device.

    PubMed

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-01-01

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal. PMID:26932470

  4. Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Lim, Woong Sun; Park, Byoung Jae; Park, Ih Ho; Kim, Young Woon; Yeom, Geun Young

    2009-03-01

    Precise etch depth control of ultra-thin HfO2 (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl3 gas. A monolayer etching condition of 1.2 Å/cycle with a low surface roughness and an unchanged surface composition was observed for ultra-thin, ALET-etched HfO2 by supplying BCl3 gas and an Ar beam at higher levels than the critical pressure and dose, respectively. When HfO2-nMOSFET devices were fabricated by ALET, a 70% increase in the drain current and a lower leakage current were observed compared with the device fabricated by conventional reactive ion etching, which was attributed to the decreased structural and electrical damage.

  5. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device

    PubMed Central

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-01-01

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal. PMID:26932470

  6. SHADE: A Shape-Memory-Activated Device Promoting Ankle Dorsiflexion

    NASA Astrophysics Data System (ADS)

    Pittaccio, S.; Viscuso, S.; Rossini, M.; Magoni, L.; Pirovano, S.; Villa, E.; Besseghini, S.; Molteni, F.

    2009-08-01

    Acute post-stroke rehabilitation protocols include passive mobilization as a means to prevent contractures. A device (SHADE) that provides repetitive passive motion to a flaccid ankle by using shape memory alloy actuators could be of great help in providing this treatment. A suitable actuator was designed as a cartridge of approximately 150 × 20 × 15 mm, containing 2.5 m of 0.25 mm diameter NiTi wire. This actuator was activated by Joule’s effect employing a 7 s current input at 0.7 A, which provided 10 N through 76 mm displacement. Cooling and reset by natural convection took 30 s. A prototype of SHADE was assembled with two thermoplastic shells hinged together at the ankle and strapped on the shin and foot. Two actuators were fixed on the upper shell while an inextensible thread connected each NiTi wire to the foot shell. The passive ankle motion (passive range of motion, PROM) generated by SHADE was evaluated optoelectronically on three flaccid patients (58 ± 5 years old); acceptability was assessed by a questionnaire presented to further three flaccid patients (44 ± 11.5 years old) who used SHADE for 5 days, 30 min a day. SHADE was well accepted by all patients, produced good PROM, and caused no pain. The results prove that suitable limb mobilization can be produced by SMA actuators.

  7. Active pixel as dosimetric device for interventional radiology

    NASA Astrophysics Data System (ADS)

    Servoli, L.; Baldaccini, F.; Biasini, M.; Checcucci, B.; Chiocchini, S.; Cicioni, R.; Conti, E.; Di Lorenzo, R.; Dipilato, A. C.; Esposito, A.; Fanó, L.; Paolucci, M.; Passeri, D.; Pentiricci, A.; Placidi, P.

    2013-08-01

    Interventional Radiology (IR) is a subspecialty of radiology comprehensive of all minimally invasive diagnostic and therapeutic procedures performed using radiological devices to obtain image guidance. The interventional procedures are potentially harmful for interventional radiologists and medical staff due to the X-ray diffusion by the patient's body. The characteristic energy range of the diffused photons spans few tens of keV. In this work we will present a proposal for a new X-ray sensing element in the energy range of interest for IR procedures. The sensing element will then be assembled in a dosimeter prototype, capable of real-time measurement, packaged in a small form-factor, with wireless communication and no external power supply to be used for individual operators dosimetry for IR procedures. For the sensor, which is the heart of the system, we considered three different Active Pixel Sensors (APS). They have shown a good capability as single X-ray photon detectors, up to several tens keV photon energy. Two dosimetric quantities have been considered, the number of detected photons and the measured energy deposition. Both observables have a linear dependence with the dose, as measured by commercial dosimeters. The uncertainties in the measurement are dominated by statistic and can be pushed at ˜5% for all the sensors under test.

  8. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, Greg W.; Baldasaro, Paul F.; Egley, James L.

    1998-01-01

    A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

  9. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

    1998-05-19

    A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

  10. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices.

    PubMed

    O'Dwyer, C; Szachowicz, M; Visimberga, G; Lavayen, V; Newcomb, S B; Torres, C M Sotomayor

    2009-04-01

    Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices. PMID:19350034

  11. Controlled surface oxidation of multi-layered graphene anode to increase hole injection efficiency in organic electronic devices

    NASA Astrophysics Data System (ADS)

    Han, Tae-Hee; Kwon, Sung-Joo; Seo, Hong-Kyu; Lee, Tae-Woo

    2016-03-01

    Ultraviolet ozone (UVO) surface treatment of graphene changes its sp2-hybridized carbons to sp3-bonded carbons, and introduces oxygen-containing components. Oxidized graphene has a finite energy band gap, so UVO modification of the surface of a four-layered graphene anode increases its surface ionization potential up to ∼5.2 eV and improves the hole injection efficiency (η) in organic electronic devices by reducing the energy barrier between the graphene anode and overlying organic layers. By controlling the conditions of the UVO treatment, the electrical properties of the graphene can be tuned to improve η. This controlled surface modification of the graphene will provide a way to achieve efficient and stable flexible displays and solid-state lighting.

  12. Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

    SciTech Connect

    Zhang, H. Z.; Ang, D. S. Gu, C. J.; Yew, K. S.; Wang, X. P.; Lo, G. Q.

    2014-12-01

    The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

  13. Automated Retinal Layer Segmentation Using Spectral Domain Optical Coherence Tomography: Evaluation of Inter-Session Repeatability and Agreement between Devices.

    PubMed

    Terry, Louise; Cassels, Nicola; Lu, Kelly; Acton, Jennifer H; Margrain, Tom H; North, Rachel V; Fergusson, James; White, Nick; Wood, Ashley

    2016-01-01

    Retinal and intra-retinal layer thicknesses are routinely generated from optical coherence tomography (OCT) images, but on-board software capabilities and image scaling assumptions are not consistent across devices. This study evaluates the device-independent Iowa Reference Algorithms (Iowa Institute for Biomedical Imaging) for automated intra-retinal layer segmentation and image scaling for three OCT systems. Healthy participants (n = 25) underwent macular volume scans using a Cirrus HD-OCT (Zeiss), 3D-OCT 1000 (Topcon), and a non-commercial long-wavelength (1040nm) OCT on two occasions. Mean thickness of 10 intra-retinal layers was measured in three ETDRS subfields (fovea, inner ring and outer ring) using the Iowa Reference Algorithms. Where available, total retinal thicknesses were measured using on-board software. Measured axial eye length (AEL)-dependent scaling was used throughout, with a comparison made to the system-specific fixed-AEL scaling. Inter-session repeatability and agreement between OCT systems and segmentation methods was assessed. Inter-session coefficient of repeatability (CoR) for the foveal subfield total retinal thickness was 3.43μm, 4.76μm, and 5.98μm for the Zeiss, Topcon, and long-wavelength images respectively. For the commercial software, CoR was 4.63μm (Zeiss) and 7.63μm (Topcon). The Iowa Reference Algorithms demonstrated higher repeatability than the on-board software and, in addition, reliably segmented all 10 intra-retinal layers. With fixed-AEL scaling, the algorithm produced significantly different thickness values for the three OCT devices (P<0.05), with these discrepancies generally characterized by an overall offset (bias) and correlations with axial eye length for the foveal subfield and outer ring (P<0.05). This correlation was reduced to an insignificant level in all cases when AEL-dependent scaling was used. Overall, the Iowa Reference Algorithms are viable for clinical and research use in healthy eyes imaged with

  14. One-layer microfluidic device for hydrodynamic 3D self-flow-focusing operating in low flow speed

    NASA Astrophysics Data System (ADS)

    Daghighi, Yasaman; Gnyawali, Vaskar; Strohm, Eric M.; Tsai, Scott S. H.; Kolios, Michael C.

    2016-03-01

    Hydrodynamic 3D flow-focusing techniques in microfluidics are categorized as (a) sheathless techniques which require high flow rates and long channels, resulting in high operating cost and high flow rates which are inappropriate for applications with flow rate limitations, and (b) sheath-flow based techniques which usually require excessive sheath flow rate to achieve hydrodynamic 3D flow-focusing. Many devices based on these principles use complicated fabrication methods to create multi-layer microchannels. We have developed a sheath-flow based microfluidic device that is capable of hydrodynamic 3D self-flow-focusing. In this device the main flow (black ink) in a low speed, and a sheath flow, enter through two inlets and enter a 180 degree curved channel (300 × 300 μm cross-section). Main flow migrates outwards into the sheath-flow due to centrifugal effects and consequently, vertical focusing is achieved at the end of the curved channel. Then, two other sheath flows horizontally confine the main flow to achieve horizontal focusing. Thus, the core flow is three-dimensionally focused at the center of the channel at the downstream. Using centrifugal force for 3D flow-focusing in a single-layer fabricated microchannel has been previously investigated by few groups. However, their demonstrated designs required high flow speed (>1 m/s) which is not suitable for many applications that live biomedical specie are involved. Here, we introduce a new design which is operational in low flow speed (<0.05 m/s) and is suitable for applications involving live cells. This microfluidic device can be used in detecting, counting and isolating cells in many biomedical applications.

  15. Diagnostic for two-mode variable valve activation device

    SciTech Connect

    Fedewa, Andrew M

    2014-01-07

    A method is provided for diagnosing a multi-mode valve train device which selectively provides high lift and low lift to a combustion valve of an internal combustion engine having a camshaft phaser actuated by an electric motor. The method includes applying a variable electric current to the electric motor to achieve a desired camshaft phaser operational mode and commanding the multi-mode valve train device to a desired valve train device operational mode selected from a high lift mode and a low lift mode. The method also includes monitoring the variable electric current and calculating a first characteristic of the parameter. The method also includes comparing the calculated first characteristic against a predetermined value of the first characteristic measured when the multi-mode valve train device is known to be in the desired valve train device operational mode.

  16. On-Line Thickness Measurement for Two-Layer Systems on Polymer Electronic Devices

    PubMed Central

    Grassi, Ana Perez; Tremmel, Anton J.; Koch, Alexander W.; El-Khozondar, Hala J.

    2013-01-01

    During the manufacturing of printed electronic circuits, different layers of coatings are applied successively on a substrate. The correct thickness of such layers is essential for guaranteeing the electronic behavior of the final product and must therefore be controlled thoroughly. This paper presents a model for measuring two-layer systems through thin film reflectometry (TFR). The model considers irregular interfaces and distortions introduced by the setup and the vertical vibration movements caused by the production process. The results show that the introduction of these latter variables is indispensable to obtain correct thickness values. The proposed approach is applied to a typical configuration of polymer electronics on transparent and non-transparent substrates. We compare our results to those obtained using a profilometer. The high degree of agreement between both measurements validates the model and suggests that the proposed measurement method can be used in industrial applications requiring fast and non-contact inspection of two-layer systems. Moreover, this approach can be used for other kinds of materials with known optical parameters. PMID:24253192

  17. Dendron growth from vertically aligned single-walled carbon nanotube thin layer arrays for photovoltaic devices.

    PubMed

    Bissett, Mark Alexander; Köper, Ingo; Quinton, Jamie Scott; Shapter, Joe George

    2011-04-01

    Single-walled carbon nanotube arrays attached to conductive transparent electrodes have previously shown promise for use in photovoltaic devices, whilst still retaining light transmission. Here, chemical modification of these thin (<200 nm) arrays with PAMAM-type dendrons has been undertaken to enhance the photoresponse of these devices. The effect of modification on the electrode was measured by differential pulse voltammetry to detect the dendrons, and the effect on the nanotubes was measured by Raman spectroscopy. Solar simulator illumination of the cells was performed to measure the effect of the nanotube modification on the cell power, and determine the optimal modification. Electrochemical impedance spectroscopy was also used to investigate the equivalent electronic circuit elements of the cells. The optimal dendron modification occurred with the second generation (G-2.0), which gave a 70% increase in power over the unmodified nanotube array. PMID:21347484

  18. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  19. Investigation of TiO2 Thin Film Growth by Layer-by-Layer Self-Assembly for Application to Optical Devices

    NASA Astrophysics Data System (ADS)

    Kyung, Kyu-Hong; Fujimoto, Kouji; Shiratori, Seimei; Kim, Jin-Ho; Kim, Sae-Hoon

    2010-04-01

    Recently, optical thin films fabricated using a water-based process have been strongly demanded. We fabricated TiO2 thin films consisting of poly(diallyl dimethyl ammonium chloride) (PDDA) and titanium(IV) bis(ammonium lactate) dihydroxide (TALH) for optical devices fabricated using layer-by-layer self-assembly. We report the effects of the pH and concentration of a solution, immersion time, and the amount of NaCl added to a solution on the thickness, morphology, surface roughness, and transmittance of fabricated thin films. The thickness, surface morphology, and transparency of (PDDA/TALH) thin films were determined by ellipsometry, field-emission scanning microscopy (FE-SEM), atomic force microscopy (AFM), and ultraviolet-visible (UV-vis) spectrometry. It was found that the thickness and surface morphology of (PDDA/TALH) multilayer films can be controlled by adjusting the TiO2 particle size of TALH solution. TiO2 particle size was controlled by adjusting the pH of TALH solution and the concentration of PDDA solution, and by adding NaCl to PDDA solution. It was found that we can increase deposition speed while maintaining optical quality by suppressing the surface roughness within 10 nm. These experimental results showed that the fabrication speed of thin films can be markedly increased, by approximately 6-fold.

  20. Boundary layer scattering measurements with a charge-coupled device camera lidar.

    PubMed

    Barnes, John E; Bronner, Sebastian; Beck, Robert; Parikh, N C

    2003-05-20

    A CCD-based bistatic lidar (CLidar) system has been developed and constructed to measure scattering in the atmospheric boundary layer. The system uses a CCD camera, wide-angle optics, and a laser. Imaging a vertical laser beam from the side allows high-altitude resolution in the boundary layer all the way to the ground. The dynamic range needed for the molecular signal is several orders of magnitude in the standard monostatic method, but only approximately 1 order of magnitude with the CLidar method. Other advantages of the Clidar method include low cost and simplicity. Observations at Mauna Loa Observatory, Hawaii, show excellent agreement with the modeled molecular-scattering signal. The scattering depends on angle (altitude) and the polarization plane of the laser. PMID:12776999

  1. Dielectric elastomer based active layer for macro-scaled industrial application in roto-flexographic printing

    NASA Astrophysics Data System (ADS)

    Pinto, F.; D'Oriano, G.; Meo, M.

    2014-03-01

    The use of dielectric elastomer (DE) for the realisation of new generation actuators has attracted the interest of many researchers in the last ten years due to their high efficiency, a very good electromechanical coupling and large achievable strains [1-3]. Although these properties constitute a very important advantage, the industrial exploitation of such systems is hindered by the high voltages required for the actuation [4] that could potentially constitute also a risk for the operators. In this work we present a DE based active layer that can be used in different macro-scaled parts of industrial equipment for roto-flexographic printing substituting traditional mechanical devices, reducing manufacturing costs and enhancing its reliability. Moreover, the specific configuration of the system requires the driving voltage to be applied only in the mounting/dismounting step thus lowering further the operative costs without posing any threat for the workers. Starting from the industrial requirements, a complete thermo-mechanical characterisation using DSC and DMA was undertaken on acrylic elastomer films in order to investigate their behaviour under the operative frequencies and solicitations. Validation of the active layer was experimentally evaluated by manufacturing a DE actuator controlling both prestrain and nature of the complaint electrodes, and measuring the electrically induced Maxwell's strain using a laser vibrometer to evaluate the relative displacement along the z-axis.

  2. Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

    NASA Astrophysics Data System (ADS)

    Ramanan, Narayanan; Lee, Bongmook; Kirkpatrick, Casey; Suri, Rahul; Misra, Veena

    2013-07-01

    In order to minimize ac-dc dispersion, reduce gate leakage and maximize ac transconductance, there is a critical need to identify optimal interfaces, low-k passivation dielectrics and high-k gate dielectrics. In this paper, an investigation of different atomic layer deposited (ALD) passivation dielectrics on AlGaN/GaN-based hetero-junction field effect transistors (HFETs) was performed. Angle-resolved x-ray photoelectron spectroscopy revealed that HCl/HF and NH4OH cleans resulted in a reduction of native oxide and carbon levels at the GaN surface. The role of high temperature anneals, following the ALD, on the effectiveness of passivation was also explored. Gate-lag measurements on HFETs passivated with a thin ALD high-k Al2O3 or HfAlO layer capped with a thick plasma enhanced chemical vapor deposited (PECVD) low-k SiO2 layer, annealed at 600-700 °C, were found to be as good as or even better than those with conventional PECVD silicon nitride passivation. Further, it was observed that different passivation dielectric stacks required different anneal temperatures for improved gate-lag behavior compared to the as-deposited case.

  3. Effect of dye concentrations in blended-layer white organic light-emitting devices based on phosphorescent dyes

    NASA Astrophysics Data System (ADS)

    Pearson, C.; Cadd, D. H.; Petty, M. C.; Hua, Y. L.

    2009-09-01

    The electronic and optoelectronic behavior of white organic light-emitting devices (OLEDs) based on blue (FIrpic) and red [Ir(piq)2(acac)] phosphorescent dyes doped into the same layer of a polyvinylcarbazole (PVK) host are reported. The conductivity of all the OLEDs studied appeared to be dominated by space-charge injection effects, exhibiting a current I versus voltage V dependence of the form I ∝Vn, with n ≈7 at applied voltages at which electroluminescence was observed. Systematic studies of the current versus voltage and light-emitting behavior of the OLEDs have identified different excitation processes for the two dyes. It is suggested that electroluminescence from the FIrpic molecules originates by direct transfer of the exciton energy from the PVK to the dye molecules, while the process of light emission from the Ir(piq)2(acac) molecules involves carrier trapping. The efficiency of the devices can be tuned, to some extent, by varying the thickness of the organic film. Luminous efficiencies and luminous power efficiencies of 8 cd A-1 and 3 lm W-1 were measured for these blended-layer OLEDs, with Commission Internationale de l'Eclairage coordinates of 0.35, 0.35.

  4. Phenylvinyl-Substituted Carbazole Twin Compounds as Efficient Materials for the Charge-Transporting Layers of OLED Devices

    NASA Astrophysics Data System (ADS)

    Tavgeniene, D.; Liu, L.; Krucaite, G.; Volyniuk, D.; Grazulevicius, J. V.; Xie, Z.; Zhang, B.; Grigalevicius, S.

    2015-10-01

    Twin compounds containing two phenylvinyl-substituted carbazole rings were synthesized by multi-step synthesis. The compounds were characterized by thermogravimetric analysis, differential scanning calorimetry, and electron photoemission spectroscopy. The thermal stability of the materials was very high; initial thermal degradation temperatures were in the range 411-419°C. The glass-transition temperatures of the amorphous materials were in the range 74-119°C. Electron photoemission spectra of thin layers of the compounds revealed ionization potentials were in the range 5.05-5.45 eV. The hole-transporting properties of thin amorphous layers of the twin compounds were tested in organic light-emitting diodes with Alq3 as green emitter. The best overall performance was observed for a device based on the twin compound containing 3-[2-(4-methylphenyl)vinyl]carbazole groups; the turn-on voltage was 2.6 V, the maximum photometric efficiency 2.34 cd/A, and maximum brightness approximately 7380 cd/m2. At a brightness of 1000 cd/m2 the photometric efficiency was 23% higher than for a PEDOT:PSS-based device.

  5. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  6. Effects of Soil Property Uncertainty on Projected Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Harp, D. R.; Atchley, A. L.; Coon, E.; Painter, S. L.; Wilson, C. J.; Romanovsky, V. E.; Liljedahl, A.

    2014-12-01

    Uncertainty in future climate is often assumed to contribute the largest uncertainty to active layer thickness (ALT) projections. However, the impact of soil property uncertainty on these projections may be significant. In this research, we evaluate the contribution of soil property uncertainty on ALT projections at the Barrow Environmental Observatory, Alaska. The effect of variations in porosity, thermal conductivity, saturation, and water retention properties of peat and mineral soil are evaluated. The micro-topography of ice wedge polygons present at the site is included in the analysis using three 1D column models to represent polygon center, rim and trough features. The Arctic Terrestrial Simulator (ATS) is used to model multiphase thermal and hydrological processes in the subsurface. We apply the Null-Space Monte Carlo (NSMC) algorithm to identify an ensemble of soil property combinations that produce simulated temperature profiles that are consistent with temperature measurements available from the site. ALT is simulated for the ensemble of soil property combinations for four climate scenarios. The uncertainty in ALT due to soil properties within and across climate scenarios is evaluated. This work was supported by LANL Laboratory Directed Research and Development Project LDRD201200068DR and by the The Next-Generation Ecosystem Experiments (NGEE Arctic) project. NGEE-Arctic is supported by the Office of Biological and Environmental Research in the DOE Office of Science.

  7. Active Layer Soil Carbon and Nutrient Mineralization, Barrow, Alaska, 2012

    DOE Data Explorer

    Stan D. Wullschleger; Holly M. Vander Stel; Colleen Iversen; Victoria L. Sloan; Richard J. Norby; Mallory P. Ladd; Jason K. Keller; Ariane Jong; Joanne Childs; Deanne J. Brice

    2015-10-29

    This data set consists of bulk soil characteristics as well as carbon and nutrient mineralization rates of active layer soils manually collected from the field in August, 2012, frozen, and then thawed and incubated across a range of temperatures in the laboratory for 28 day periods in 2013-2015. The soils were collected from four replicate polygons in each of the four Areas (A, B, C, and D) of Intensive Site 1 at the Next-Generation Ecosystem Experiments (NGEE) Arctic site near Barrow, Alaska. Soil samples were coincident with the established Vegetation Plots that are located in center, edge, and trough microtopography in each polygon. Data included are 1) bulk soil characteristics including carbon, nitrogen, gravimetric water content, bulk density, and pH in 5-cm depth increments and also by soil horizon, 2) carbon, nitrogen, and phosphorus mineralization rates for soil horizons incubated aerobically (and in one case both aerobically and anaerobically) for 28 days at temperatures that included 2, 4, 8, and 12 degrees C. Additional soil and incubation data are forthcoming. They will be available when published as part of another paper that includes additional replicate analyses.

  8. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Hinzman, L.D.; Kane, D.L.

    1987-04-01

    The hydrology of the active layer of a watershed is described. In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. Significant runoff events are few. Convective storms covering relatively small areas on the North Slope of Alaska can produce significant small-scale events in a small watershed scale,but these events are rapidly attenuated outside the basin. Data collection began in August 1984. We have continuously monitored the hydrologic, the meteorologic, and the soil's physical conditions. Information was collected through implementation of four snowmelt runoff plots and measurements of essential microclimate parameters. Soil moisture and temperature profiles were measured adjacent to each snowmelt runoff plot, and heat flux is collected adjacent to one of these plots. Meteorological parameters were measured locally. The water content of the snowpack prior to snowmelt was measured throughout the watershed and measured daily adjacent to each plot during snowmelt. The stream draining the basin was measured regularly during the spring melt event to provide information on watershed runoff rates and the volume of snowmelt.

  9. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Hinzman, L.D.; Kane, D.L.

    1987-04-01

    The hydrology of the active layer of a watershed is described. In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. Significant runoff events are few. Convective storms covering relatively small areas on the North Slope of Alaska can produce significant small-scale events in a small watershed scale,but these events are rapidly attenuated outside the basin. Data collection began in August 1984. We have continuously monitored the hydrologic, the meteorologic, and the soil`s physical conditions. Information was collected through implementation of four snowmelt runoff plots and measurements of essential microclimate parameters. Soil moisture and temperature profiles were measured adjacent to each snowmelt runoff plot, and heat flux is collected adjacent to one of these plots. Meteorological parameters were measured locally. The water content of the snowpack prior to snowmelt was measured throughout the watershed and measured daily adjacent to each plot during snowmelt. The stream draining the basin was measured regularly during the spring melt event to provide information on watershed runoff rates and the volume of snowmelt.

  10. Active millimeter wave detection of concealed layers of dielectric material

    NASA Astrophysics Data System (ADS)

    Bowring, N. J.; Baker, J. G.; Rezgui, N. D.; Southgate, M.; Alder, J. F.

    2007-04-01

    Extensive work has been published on millimetre wave active and passive detection and imaging of metallic objects concealed under clothing. We propose and demonstrate a technique for revealing the depth as well as the outline of partially transparent objects, which is especially suited to imaging layer materials such as explosives and drugs. The technique uses a focussed and scanned FMCW source, swept through many GHz to reveal this structure. The principle involved is that a parallel sided dielectric slab produces reflections at both its upper and lower surfaces, acting as a Fabry-Perot interferometer. This produces a pattern of alternating reflected peaks and troughs in frequency space. Fourier or Burg transforming this pattern into z-space generates a peak at the thickness of the irradiated sample. It could be argued that though such a technique may work for single uniform slabs of dielectric material, it will give results of little or no significance when the sample both scatters the incident radiation and gives erratic reflectivities due to its non-uniform thickness and permittivity . We show results for a variety of materials such as explosive simulants, powder and drugs, both alone and concealed under clothing or in a rucksack, which display strongly directional reflectivities at millimeter wavelengths, and whose location is well displayed by a varying thickness parameter as the millimetre beam is scanned across the target. With this system we find that samples can easily be detected at standoff distances of at least 4.6m.

  11. Microbial diversity in European alpine permafrost and active layers.

    PubMed

    Frey, Beat; Rime, Thomas; Phillips, Marcia; Stierli, Beat; Hajdas, Irka; Widmer, Franco; Hartmann, Martin

    2016-03-01

    Permafrost represents a largely understudied genetic resource. Thawing of permafrost with global warming will not only promote microbial carbon turnover with direct feedback on greenhouse gases, but also unlock an unknown microbial diversity. Pioneering metagenomic efforts have shed light on the permafrost microbiome in polar regions, but temperate mountain permafrost is largely understudied. We applied a unique experimental design coupled to high-throughput sequencing of ribosomal markers to characterize the microbiota at the long-term alpine permafrost study site 'Muot-da-Barba-Peider' in eastern Switzerland with an approximate radiocarbon age of 12 000 years. Compared to the active layers, the permafrost community was more diverse and enriched with members of the superphylum Patescibacteria (OD1, TM7, GN02 and OP11). These understudied phyla with no cultured representatives proposedly feature small streamlined genomes with reduced metabolic capabilities, adaptations to anaerobic fermentative metabolisms and potential ectosymbiotic lifestyles. The permafrost microbiota was also enriched with yeasts and lichenized fungi known to harbour various structural and functional adaptation mechanisms to survive under extreme sub-zero conditions. These data yield an unprecedented view on microbial life in temperate mountain permafrost, which is increasingly important for understanding the biological dynamics of permafrost in order to anticipate potential ecological trajectories in a warming world. PMID:26832204

  12. Towards NOAA Forecasts of Permafrost Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Livezey, M. M.; Jonassen, R. G.; Horsfall, F. M. C.; Jafarov, E. E.; Schaefer, K. M.

    2014-12-01

    NOAA's implementation of its 2014 Arctic Action Plan (AAP) lacks services related to permafrost change yet the Interagency Working Group on Coordination of Domestic Energy Development and Permitting in Alaska noted that warming permafrost challenges land-based development and calls for agencies to provide focused information needed by decision-makers. To address this we propose to link NOAA's existing seasonal forecasts of temperature and precipitation with a high-resolution model of the thermal state of permafrost (Jafarov et al., 2012) to provide near-term (one year ahead) forecasts of active layer thickness (ALT). Such forecasts would be an official NOAA statement of the expected thermal state of permafrost ALT in Alaska and would require: (1) long-term climate outlooks, (2) a permafrost model, (3) detailed specification of local spatial and vertical controls upon soil thermal state, (4) high-resolution vertical measurements of that thermal state, and (5) demonstration of forecast skill in pilot studies. Pilot efforts should focus on oil pipelines where the cost can be justified. With skillful forecasts, engineers could reduce costs of monitoring and repair as well as ecosystem damage by positioning equipment to more rapidly respond to predicted disruptions.

  13. Spirobifluorene-2,7-dicarbazole-4'-phosphine Oxide as Host for High-Performance Single-Layer Green Phosphorescent OLED Devices.

    PubMed

    Thiery, Sébastien; Tondelier, Denis; Geffroy, Bernard; Jacques, Emmanuel; Robin, Malo; Métivier, Rémi; Jeannin, Olivier; Rault-Berthelot, Joëlle; Poriel, Cyril

    2015-10-01

    A new host material based on the 2,7,4'-substituted spirobifluorene platform has been designed and used in single-layer phosphorescent OLED with very high efficiency (EQE = 13.2%) and low turn-on voltage (2.4 V). This performance is among the best reported for green single-layer PhOLEDs and may open new avenues in the design of host materials for single-layer devices. PMID:26371550

  14. Laser Activated Flow Regulator for Glaucoma Drainage Devices

    PubMed Central

    Olson, Jeffrey L.; Velez-Montoya, Raul; Bhandari, Ramanath

    2014-01-01

    Purpose To assess the capabilities of a new glaucoma drainage device regulator in controlling fluid flow as well as to demonstrate that this effect may be titratable by noninvasive means. Methods A rigid eye model with two main ports was used. On the first port, we placed a saline solution column. On the second, we placed a glaucoma shunt. We then measured the flow and flow rate through the system. After placing the regulator device on the tip of the tube, we measured again with the intact membrane and with the membrane open 50% and 100%. For the ex vivo testing we used a similar setting, using a cadaveric porcine eye, we measured again the flow and flow rate. However, this time we opened the membrane gradually using laser shots. A one-way analysis of variance and a Fisher's Least Significant Difference test were used for statistical significance. We also calculated the correlation between the numbers of laser shots applied and the main outcomes. Results The flow through the system with the glaucoma drainage device regulator (membrane intact and 50% open) was statistically lower than with the membrane open 100% and without device (P < 0.05). The flow was successfully controlled by the number of laser shots applied, and showed a positive correlation (+ 0.9). The flow rate was almost doubled every 10 shots and statistically lower than without device at all time (P < 0.05). Conclusions The glaucoma drainage device regulator can be controlled noninvasively with laser, and allows titratable control of aqueous flow. Translational Relevance Initial results and evidence from this experiment will justify the initiation of in vivo animal trials with the glaucoma drainage device regulator; which brings us closer to possible human trials and the chance to significantly improve the existing technology to treat glaucoma surgically. PMID:25374772

  15. Strain-compensated AlGaN /GaN/InGaN cladding layers in homoepitaxial nitride devices

    NASA Astrophysics Data System (ADS)

    Czernecki, R.; Krukowski, S.; Targowski, G.; Prystawko, P.; Sarzynski, M.; Krysko, M.; Kamler, G.; Grzegory, I.; Leszczynski, M.; Porowski, S.

    2007-12-01

    One of the most important problems in III-nitride violet laser diode technology is the lattice mismatch between the AlGaN cladding layers and the rest of the epitaxial structure. For efficiently working devices, it is necessary to have both a high Al content and thick claddings. This leads, however, to severe sample bowing and even cracking of the upper layer. In this work, we propose a cladding structure of strain-compensated AlGaN /GaN/InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses and compositions of the layers were employed. We measured the radius of bowing, lattice mismatches, aluminum and indium contents, and densities of threading dislocations. The proposed cladding structures suppress bowing and cracking, which are the two parasitic effects commonly experienced in laser diodes with bulk AlGaN claddings. The suppression of cracking and bowing is shown to occur due to modified strain energy distribution of the superlattices structure.

  16. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation. PMID:22966566

  17. Repeated in vivo electrochemical activation and the biological effects of microelectromechanical systems drug delivery device.

    PubMed

    Shawgo, Rebecca S; Voskerician, Gabriela; Duc, Hong Linh Ho; Li, Yawen; Lynn, Aaron; MacEwan, Matthew; Langer, Robert; Anderson, James M; Cima, Michael J

    2004-12-15

    The repeated activation of a microelectromechanical systems (MEMS) drug delivery device was studied in vivo in rats to examine the effect of implantation on the device operation and the effect of electrochemical activation on the inflammatory and wound-healing response. The MEMS devices were fabricated from a silicon wafer into which reservoirs were etched and covered with gold membranes. The membranes were electrochemically removed when an anodic voltage was applied. Devices were implanted subcutaneously both with and without stainless steel mesh cages for 4, 7, 14, 21, or 28 days before activation. Devices were activated every other day for five activations. Leukocyte concentrations indicated that both the application of voltage and the gold corrosion products elevated the inflammatory response which was resolved within 48 h after each activation. The efficiency of gold membrane removal was not impaired throughout the implantation, although a bimodal distribution of background current densities was observed after long implantation times. The thickness of the fibrous capsule surrounding the MEMS devices was similar between activated and control devices explanted at each time point. It was concluded that the repeated activation of MEMS drug delivery devices was successful and the activation produced an acceptable biological response that resolved promptly. PMID:15508122

  18. Organic spintronic devices and methods for making the same

    DOEpatents

    Vardeny, Zee Valentine; Ndobe, Alex

    2014-09-23

    An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

  19. Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

    PubMed

    Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

    2013-05-01

    A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third. PMID:23858874

  20. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

    PubMed

    Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

    2011-03-01

    Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel. PMID:21116548

  1. Hole-selective and impedance characteristics of an aqueous solution-processable MoO3 layer for solution-processable organic semiconducting devices

    NASA Astrophysics Data System (ADS)

    Moon, Byung Seuk; Lee, Soo-Hyoung; Huh, Yoon Ho; Park, Byoungchoo

    2015-02-01

    We herein report an investigation of aqueous solution-processable molybdenum-oxide (MoO3) hole-selective layers fabricated for solution-processable organic semiconducting devices. A homogeneous MoO3 layer was successfully deposited via spin-coating using aqueous solutions of ammonium heptamolybdate as a MoO3 precursor. The use of the solution-processable MoO3 layer as a hole-injecting layer (HIL) on an indium-tin-oxide (ITO) anode in solution-processable organic light-emitting diodes (OLEDs) resulted in excellent device performance in terms of the brightness (maximum brightness of 37,000 cd m-2) and the efficiency (peak efficiency of 25.2 cd A-1), comparable to or better than those of a reference OLED with a conventional poly(ethylenedioxy thiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. Such good device performance is attributed to the water-processable MoO3 hole-selective layers, which allowed the formation of a high-quality film and provided good matching of the energy levels between adjacent layers with improved hole-injecting properties, impedance characteristics, and stability. Furthermore, polymer solar cells (PSCs) with a MoO3 layer used as a hole-collecting layer (HCL) showed improved power conversion efficiency (3.81%), which was higher than that obtained using the PEDOT:PSS HCL. These results clearly indicate the benefits of using a water-processable MoO3 layer, which effectively acts as a hole-selective layer on an ITO anode and provides good hole-injection/collection, electron-blocking and energy-level-matching properties, and improved stability. They, therefore, offer considerable promise as an alternative to a conventional PEDOT:PSS layer in the production of high-performance solution-processable organic semiconducting devices.

  2. Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers

    SciTech Connect

    Biefeld, R.M.; Kurtz, S.R.; Phillips, J.D.

    1999-05-13

    We report on the metal-organic chemical vapor deposition (MOCVD) of mid- infrared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained, type 1, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 µm. We find a variation of bandgap from 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data we have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. An InAsSb/InPSb SLS, optically pumped laser structure was grown on an InAs substrate with AlAs0.l6Sb0.84 claddings. A lasing threshold and spectrally narrowed laser emission was seen from 80 K through 200 K, the maximum temperature where Iasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T0 = 72 K, from 80 to 200 K.

  3. Silica nanoparticles for the layer-by-layer assembly of fully electro-active cytochrome c multilayers

    PubMed Central

    2011-01-01

    Background For bioanalytical systems sensitivity and biomolecule activity are critical issues. The immobilization of proteins into multilayer systems by the layer-by-layer deposition has become one of the favorite methods with this respect. Moreover, the combination of nanoparticles with biomolecules on electrodes is a matter of particular interest since several examples with high activities and direct electron transfer have been found. Our study describes the investigation on silica nanoparticles and the redox protein cytochrome c for the construction of electro-active multilayer architectures, and the electron transfer within such systems. The novelty of this work is the construction of such artificial architectures with a non-conducting building block. Furthermore a detailed study of the size influence of silica nanoparticles is performed with regard to formation and electrochemical behavior of these systems. Results We report on interprotein electron transfer (IET) reaction cascades of cytochrome c (cyt c) immobilized by the use of modified silica nanoparticles (SiNPs) to act as an artificial matrix. The layer-by-layer deposition technique has been used for the formation of silica particles/cytochrome c multilayer assemblies on electrodes. The silica particles are characterized by dynamic light scattering (DLS), Fourier transformed infrared spectroscopy (FT-IR), Zeta-potential and transmission electron microscopy (TEM). The modified particles have been studied with respect to act as an artificial network for cytochrome c and to allow efficient interprotein electron transfer reactions. We demonstrate that it is possible to form electro-active assemblies with these non-conducting particles. The electrochemical response is increasing linearly with the number of layers deposited, reaching a cyt c surface concentration of about 80 pmol/cm2 with a 5 layer architecture. The interprotein electron transfer through the layer system and the influence of particle size are

  4. Optimization of the in-needle extraction device for the direct flow of the liquid sample through the sorbent layer.

    PubMed

    Pietrzyńska, Monika; Voelkel, Adam

    2014-11-01

    In-needle extraction was applied for preparation of aqueous samples. This technique was used for direct isolation of analytes from liquid samples which was achieved by forcing the flow of the sample through the sorbent layer: silica or polymer (styrene/divinylbenzene). Specially designed needle was packed with three different sorbents on which the analytes (phenol, p-benzoquinone, 4-chlorophenol, thymol and caffeine) were retained. Acceptable sampling conditions for direct analysis of liquid sample were selected. Experimental data collected from the series of liquid samples analysis made with use of in-needle device showed that the effectiveness of the system depends on various parameters such as breakthrough volume and the sorption capacity, effect of sampling flow rate, solvent effect on elution step, required volume of solvent for elution step. The optimal sampling flow rate was in range of 0.5-2 mL/min, the minimum volume of solvent was at 400 µL level. PMID:25127610

  5. Temperature distribution in a layer of an active thermal insulation system heated by a gas burner

    SciTech Connect

    Maruyama, Shigenao . Inst. of Fluid Science); Shimizu, Naotaka . Dept. of Mechanical Engineering)

    1993-12-01

    The temperature distribution in a layer of an active thermal insulation system was measured. A semitransparent porous layer was heated by a gas burner, and air was injected from the back face of the layer. The temperature in the layer was measured by thermocouples. The temperature distributions were compared with numerical solutions. The thermal penetration depth of the active thermal insulation layer with gas injection can be reduced to 3 mm. When the surface temperature of a conventional insulation layer without gas injection reached 1,500 K, the temperature at the back surface of a 10-mm-thick layer reached 600 K. The transient temperature of the active thermal insulation reached a steady state very quickly compared with that of the conventional insulation. These characteristics agreed qualitatively with the numerical solutions.

  6. A new way towards high-efficiency thermally activated delayed fluorescence devices via external heavy-atom effect

    NASA Astrophysics Data System (ADS)

    Zhang, Wenzhi; Jin, Jiangjiang; Huang, Zhi; Zhuang, Shaoqing; Wang, Lei

    2016-07-01

    Thermally activated delayed fluorescence (TADF) mechanism is a significant method that enables the harvesting of both triplet and singlet excitons for emission. However, up to now most efforts have been devoted to dealing with the relation between singlet-triplet splitting (ΔEST) and fluorescence efficiency, while the significance of spin-orbit coupling (SOC) is usually ignored. In this contribution, a new method is developed to realize high-efficiency TADF-based devices through simple device-structure optimizations. By inserting an ultrathin external heavy-atom (EHA) perturber layer in a desired manner, it provides useful means of accelerating the T1 → S1 reverse intersystem crossing (RISC) in TADF molecules without affecting the corresponding S1 → T1 process heavily. Furthermore, this strategy also promotes the utilization of host triplets through Förster mechanism during host → guest energy transfer (ET) processes, which helps to get rid of the solely dependence upon Dexter mechanism. Based on this strategy, we have successfully raised the external quantum efficiency (EQE) in 4CzPN-based devices by nearly 38% in comparison to control devices. These findings provide keen insights into the role of EHA played in TADF-based devices, offering valuable guidelines for utilizing certain TADF dyes which possess high radiative transition rate but relatively inefficient RISC.

  7. A new way towards high-efficiency thermally activated delayed fluorescence devices via external heavy-atom effect

    PubMed Central

    Zhang, Wenzhi; Jin, Jiangjiang; Huang, Zhi; Zhuang, Shaoqing; Wang, Lei

    2016-01-01

    Thermally activated delayed fluorescence (TADF) mechanism is a significant method that enables the harvesting of both triplet and singlet excitons for emission. However, up to now most efforts have been devoted to dealing with the relation between singlet-triplet splitting (ΔEST) and fluorescence efficiency, while the significance of spin-orbit coupling (SOC) is usually ignored. In this contribution, a new method is developed to realize high-efficiency TADF-based devices through simple device-structure optimizations. By inserting an ultrathin external heavy-atom (EHA) perturber layer in a desired manner, it provides useful means of accelerating the T1 → S1 reverse intersystem crossing (RISC) in TADF molecules without affecting the corresponding S1 → T1 process heavily. Furthermore, this strategy also promotes the utilization of host triplets through Förster mechanism during host → guest energy transfer (ET) processes, which helps to get rid of the solely dependence upon Dexter mechanism. Based on this strategy, we have successfully raised the external quantum efficiency (EQE) in 4CzPN-based devices by nearly 38% in comparison to control devices. These findings provide keen insights into the role of EHA played in TADF-based devices, offering valuable guidelines for utilizing certain TADF dyes which possess high radiative transition rate but relatively inefficient RISC. PMID:27439967

  8. Impact of light on organic solar cells: evolution of the chemical structure, morphology, and photophysical properties of the active layer

    NASA Astrophysics Data System (ADS)

    Rivaton, Agnès; Chambon, Sylvain; Manceau, Matthieu; Gardette, Jean-Luc; Firon, Muriel; Lemaître, Noëlla; Guillerez, Stéphane; Cros, Stéphane

    2008-04-01

    Organic photovoltaic represents an emerging technology thanks to its ability to give flexible, light weight and large-area devices, with low production cost by simple solution process or printing technologies. But these devices are known to exhibit low resistance to the combined action of sunlight, oxygen and water. This paper is focused on the behaviour of the active layer of the devices under illumination in the presence and absence of oxygen. The monitoring of the evolution of the chemical structure of MDMO-PPV submitted to accelerated artificial ageing permitted the elucidation of the mechanisms by which the polymer degrades. Extrapolation of the data to natural ageing suggested that, if well protected from oxygen (encapsulation), MDMO-PPV:PCBM based active layer is photochemically stable for several years in use conditions. In addition the charge transfer between the two materials was observed to remain efficient under exposure. The study of P3HT:PCBM blends allowed to point out the Achilles heel of P3HT towards the impact of light. In addition, P3HT:PCBM blends were shown to be much more stable under illumination than MDMO:PCBM blends. Preliminary results devoted to the AFM monitoring of the morphological modifications of P3HT:PCBM blends under the impact of light are also reported.

  9. The effect of laser pulse duration and beam shape on the selective removal of novel thin film layers for flexible electronic devices

    NASA Astrophysics Data System (ADS)

    Moorhouse, C.; Karnakis, D. M.; Kapnopoulos, C.; Laskarakis, A.; Logothetidis, S.; Antonopoulos, G.; Mekeridis, E.

    2015-07-01

    Lightweight, flexible substrates coated with thin film layers <0.5μm thick are commonly utilized for modern electronic devices that are portable and constantly reducing in size, weight, power consumption and material cost. Patterning techniques for these thin films are required to provide device functionality and alternatives to photolithography such as direct write laser processes are particularly attractive. However, for complex devices with multiple thin layers, the quality requirements for laser scribing are extremely high, since each individual thin film layer must be patterned without damaging the underlying thin film layer(s) and also provide a suitable topography for subsequent layers to be deposited upon. Hence, the choice of the laser parameters is critical for a number of emerging thin film materials used in flexible electronic devices such as ITO, pedot:PSS, silver nanoparticle inks, amongst others. These thin films can be extremely sensitive to the thermal interaction with lasers and this report outlines the influence of laser pulse duration and beam shaping techniques on laser patterning of these thin films and the implications for laser system design.

  10. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  11. Grain sorting in the morphological active layer of a braided river physical model

    NASA Astrophysics Data System (ADS)

    Leduc, P.; Ashmore, P.; Gardner, J. T.

    2015-07-01

    A physical scale model of a gravel-bed braided river was used to measure vertical grain size sorting in the morphological active layer aggregated over the width of the river. This vertical sorting is important for analyzing braided river sedimentology, for numerical modeling of braided river morpho-dynamics and for measuring and predicting bed load transport rate. We define the morphological active layer as the bed material between the maximum and minimum bed elevations at a point over extended time periods sufficient for braiding processes to re-work the river bed. The vertical extent of the active layer was measured using 40 hourly high-resolution DEMs of the model river bed. An image texture algorithm was used to map bed material grain size of each DEM. Analysis of the 40 DEMs and texture maps provides data on the geometry of the morphological active layer and variation in grain size in three-dimensions. Normalizing active layer thickness and dividing into 10 sub-layers we show that all grain sizes occur with almost equal frequency in all sub-layers. Occurrence of patches and strings of coarser (or finer) material relates to preservation of particular morpho-textural features within the active layer. For numerical modeling and bed load prediction a morphological active layer that is fully mixed with respect to grain size is a reliable approximation.

  12. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly. PMID:26789206

  13. Improved Device Lifetime of Organic Light Emitting Diodes with an Electrochemically Stable π-Conjugated Liquid Host in the Liquid Emitting Layer

    NASA Astrophysics Data System (ADS)

    Hirata, Shuzo; Heo, Hyo Jung; Shibano, Yuki; Hirata, Osamu; Yahiro, Masayuki; Adachi, Chihaya

    2012-04-01

    The device lifetimes of organic light emitting diodes with a liquid emitting layer (liquid OLEDs) were improved by proper combination of host and guest molecules in the liquid emitting layer. The device lifetime strongly depends on the electrochemical stability of radical cations in the liquid emitting layer. The electrochemical stability of the liquid host materials was achieved by the dimerization of the alkyl-substituted carbazole 9,9'-2-[2-(2-methoxyethoxy)ethoxy]ethyl-3,3'-bis(9H-carbazole) [(TEGCz)2]. The use of a guest compound with its highest occupied molecular orbital level higher in energy than that of (TEGCz)2 is a critical factor for realizing stable electroluminescence performance. A liquid OLED with proper combination of the guest and host materials showed an improved device lifetime of longer than 1 h, which is 100 times longer than that of our previous reports.

  14. Conformal Coating of Three-Dimensional Nanostructures via Atomic Layer Deposition for Development of Advanced Energy Storage Devices and Plasmonic Transparent Conductors

    NASA Astrophysics Data System (ADS)

    Malek, Gary A.

    Due to the prodigious amount of electrical energy consumed throughout the world, there exists a great demand for new and improved methods of generating electrical energy in a clean and renewable manner as well as finding more effective ways to store it. This enormous task is of great interest to scientists and engineers, and much headway is being made by utilizing three-dimensional (3D) nanostructured materials. This work explores the application of two types of 3D nanostructured materials toward fabrication of advanced electrical energy storage and conversion devices. The first nanostructured material consists of vertically aligned carbon nanofibers. This three-dimensional structure is opaque, electrically conducting, and contains active sites along the outside of each fiber that are conducive to chemical reactions. Therefore, they make the perfect 3D conducting nanostructured substrate for advanced energy storage devices. In this work, the details for transforming vertically aligned carbon nanofiber arrays into core-shell structures via atomic layer deposition as well as into a mesoporous manganese oxide coated supercapacitor electrode are given. Another unique type of three-dimensional nanostructured substrate is nanotextured glass, which is transparent but non-conducting. Therefore, it can be converted to a 3D transparent conductor for possible application in photovoltaics if it can be conformally coated with a conducting material. This work details that transformation as well as the addition of plasmonic gold nanoparticles to complete the transition to a 3D plasmonic transparent conductor.

  15. Emerging Vocabulary Learning: From a Perspective of Activities Facilitated by Mobile Devices

    ERIC Educational Resources Information Center

    Hu, Zengning

    2013-01-01

    This paper examines the current mobile vocabulary learning practice to discover how far mobile devices are being used to support vocabulary learning. An activity-centered perspective is undertaken, with the consideration of new practice against existing theories of learning activities including behaviorist activities, constructivist activities,…

  16. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

    NASA Astrophysics Data System (ADS)

    Deleruyelle, D.; Putero, M.; Ouled-Khachroum, T.; Bocquet, M.; Coulet, M.-V.; Boddaert, X.; Calmes, C.; Muller, C.

    2013-01-01

    This paper shows that the well-know chalcogenide Ge2Sb2Te5 (GST) in its amorphous state may be advantageously used as solid electrolyte material to fabricate Conductive-Bridge Random Access Memory (CBRAM) devices. GST layer was sputtered on preliminary inkjet-printed silver lines acting as active electrode on either silicon or plastic substrates. Whatever the substrate, the resistance switching is unambiguously attested at a nanoscale by means of conductive-atomic force microscopy (C-AFM) using a Pt-Ir coated tip on the GST surface acting as a passive electrode. The resistance change is correlated to the appearance or disappearance of concomitant hillocks and current spots at the surface of the GST layer. This feature is attributed to the formation/dissolution of a silver-rich protrusion beneath the AFM tip during set/reset operation. Beside, this paper constitutes a step toward the elaboration of crossbar memory arrays on flexible substrates since CBRAM operations were demonstrated on W/GST/Ag crossbar memory cells obtained from an heterogeneous fabrication process combining physical deposition and inkjet-printing.

  17. Layer-by-layer self-assembly in the development of electrochemical energy conversion and storage devices from fuel cells to supercapacitors.

    PubMed

    Xiang, Yan; Lu, Shanfu; Jiang, San Ping

    2012-11-01

    As one of the most effective synthesis tools, layer-by-layer (LbL) self-assembly technology can provide a strong non-covalent integration and accurate assembly between homo- or hetero-phase compounds or oppositely charged polyelectrolytes, resulting in highly-ordered nanoscale structures or patterns with excellent functionalities and activities. It has been widely used in the developments of novel materials and nanostructures or patterns from nanotechnologies to medical fields. However, the application of LbL self-assembly in the development of highly efficient electrocatalysts, specific functionalized membranes for proton exchange membrane fuel cells (PEMFCs) and electrode materials for supercapacitors is a relatively new phenomenon. In this review, the application of LbL self-assembly in the development and synthesis of key materials of PEMFCs including polyelectrolyte multilayered proton-exchange membranes, methanol-blocking Nafion membranes, highly uniform and efficient Pt-based electrocatalysts, self-assembled polyelectrolyte functionalized carbon nanotubes (CNTs) and graphenes will be reviewed. The application of LbL self-assembly for the development of multilayer nanostructured materials for use in electrochemical supercapacitors will also be reviewed and discussed (250 references). PMID:22945597

  18. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  19. Effects of spatial variation of skull and cerebrospinal fluid layers on optical mapping of brain activities

    NASA Astrophysics Data System (ADS)

    Wang, Shuping; Shibahara, Nanae; Kuramashi, Daishi; Okawa, Shinpei; Kakuta, Naoto; Okada, Eiji; Maki, Atsushi; Yamada, Yukio

    2010-07-01

    In order to investigate the effects of anatomical variation in human heads on the optical mapping of brain activity, we perform simulations of optical mapping by solving the photon diffusion equation for layered-models simulating human heads using the finite element method (FEM). Particularly, the effects of the spatial variations in the thicknesses of the skull and cerebrospinal fluid (CSF) layers on mapping images are investigated. Mapping images of single active regions in the gray matter layer are affected by the spatial variations in the skull and CSF layer thicknesses, although the effects are smaller than those of the positions of the active region relative to the data points. The increase in the skull thickness decreases the sensitivity of the images to active regions, while the increase in the CSF layer thickness increases the sensitivity in general. The images of multiple active regions are also influenced by their positions relative to the data points and by their depths from the skin surface.

  20. A poly(phenyleneethynylene) polymer bearing amino acid substituents as active layer in enantioselective solid-state sensors

    NASA Astrophysics Data System (ADS)

    Tanese, M. C.; Hassan Omar, O.; Torsi, L.; Marinelli, F.; Colangiuli, D.; Farinola, G. M.; Babudri, F.; Naso, F.; Sabbatini, L.; Zambonin, P. G.

    2006-04-01

    A poly(phenyleneethynylene) polymer bearing amino acid pendant groups is used as enantioselective active layer in solid-state sensing devices. The chiral analyte in the present study is menthol in both the natural (-) and synthetic (+) enantiomers. The polymer bearing amino acid chiral sites is demonstrated to interact more favorably with the natural menthol than the synthetic one in a quartz crystal microbalance revealing system. Promising perspectives are seen for the use of such polymers in chiral discriminating, chemically sensitive resistors or even transistors.

  1. Thin film-based optically variable security devices: From passive to active

    NASA Astrophysics Data System (ADS)

    Baloukas, Bill

    Counterfeiting costs the world economy billions of dollars every year. Aside from financial losses, counterfeiting also poses a great threat to the public's safety, for example through the existence of counterfeit passports (terrorism), pharmaceutical products (health hazards) and even airplane parts (safety issues). Optical security devices (OSDs) have therefore played a critical role in the fight against counterfeiting. It is the aim of the present thesis to show that through the use of metamerism and electrochromic materials, new types of active security devices with interesting features can be created; indeed, most present-day devices are passive in nature. I first demonstrate that the addition of metamerism in the design of interference filters can result in innovative features. Different structures which can be used in transmission and/or in reflection are designed, fabricated, and evaluated. The first structures which are presented here are based on a combination of two different metameric interference filters. Possessing widely different transmission spectra, these filters also offer different angular color shifts and, as a result, offer an opportunity of creating hidden image effects. Despite their interesting properties, such metameric devices are shown to be highly illuminant and observer sensitive; that is the color match is lost under most observation conditions. These issues are solved by a simpler structure based on the juxtaposition of an interference filter and a non-iridescent colored material. Throughout this study, I present the design approach, analyze the filters' sensitivity to deposition errors, and evaluate the performance of prototype devices prepared by dual ion beam sputtering. Following my work on passive metameric systems, I then propose to go one step further by implementing an active component using an electrochromic material. This novel concept, which is based on the joint use of a metameric filter and electrochromic device, offers

  2. Study of electronicaly active defects in GaAlAs:Sn devices and their role in degradation

    NASA Astrophysics Data System (ADS)

    Paviot, J.-L.

    The physical properties of deep levels in Sn-doped Ga(1-x)Al(x)As layers (heterostructures that are intended for the design of solar cells working in conditions of solar-ray concentration) are characterized. Samples were made by liquid-phase epitaxy (x = 0-0.6) on a GaAs substrate. A reliable technique for the fabrication of high-quality Schottky diodes, where the ohmic contact is annealed by a pulsed electron beam, is described. The electronically active centers were investigated by current and capacitance transient spectroscopy. It is shown that tin is responsible for the formation of DX centers in the layer, associated with complex centers arising around the impurity in the lattice. Aging measurments performed on double-heterostructure optoelectronic transducers fabricated using liquid-phase epitaxy indicate that tin plays an important role in the degradation of such devices.

  3. Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

    NASA Astrophysics Data System (ADS)

    Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

    2015-05-01

    We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

  4. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  5. Synthesis of nanoporous activated iridium oxide films by anodized aluminum oxide templated atomic layer deposition.

    SciTech Connect

    Comstock, D. J.; Christensen, S. T.; Elam, J. W.; Pellin, M. J.; Hersam, M. C.

    2010-08-01

    Iridium oxide (IrOx) has been widely studied due to its applications in electrochromic devices, pH sensing, and neural stimulation. Previous work has demonstrated that both Ir and IrOx films with porous morphologies prepared by sputtering exhibit significantly enhanced charge storage capacities. However, sputtering provides only limited control over film porosity. In this work, we demonstrate an alternative scheme for synthesizing nanoporous Ir and activated IrOx films (AIROFs). This scheme utilizes atomic layer deposition to deposit a thin conformal Ir film within a nanoporous anodized aluminum oxide template. The Ir film is then activated by potential cycling in 0.1 M H{sub 2}SO{sub 4} to form a nanoporous AIROF. The morphologies and electrochemical properties of the films are characterized by scanning electron microscopy and cyclic voltammetry, respectively. The resulting nanoporous AIROFs exhibit a nanoporous morphology and enhanced cathodal charge storage capacities as large as 311 mC/cm{sup 2}.

  6. Feasibility of using a compact elliptical device to increase energy expenditure during sedentary activities

    PubMed Central

    Rovniak, Liza S.; Denlinger, LeAnn; Duveneck, Ellen; Sciamanna, Christopher N.; Kong, Lan; Freivalds, Andris; Ray, Chester A.

    2013-01-01

    Objectives This study aimed to evaluate the feasibility of using a compact elliptical device to increase energy expenditure during sedentary activities. A secondary aim was to evaluate if two accelerometers attached to the elliptical device could provide reliable and valid assessments of participants’ frequency and duration of elliptical device use. Design Physically inactive adults (n = 32, age range = 25–65) were recruited through local advertisements and selected using stratified random sampling based on sex, body mass index (BMI), and age. Methods Indirect calorimetry was used to assess participants’ energy expenditure while seated and while using the elliptical device at a self-selected intensity level. Participants also self-reported their interest in using the elliptical device during sedentary activities. Two Actigraph GT3X accelerometers were attached to the elliptical device to record time-use patterns. Results Participants expended a median of 179.1 kilocalories per hour while using the elliptical device (range = 108.2–269.0), or a median of 87.9 more kilocalories (range = 19.7–178.6) than they would expend per hour of sedentary sitting. Participants reported high interest in using the elliptical device during TV watching and computer work, but relatively low interest in using the device during office meetings. Women reported greater interest in using the elliptical device than men. The two accelerometers recorded identical time-use patterns on the elliptical device and demonstrated concurrent validity with time-stamped computer records. Conclusions Compact elliptical devices could increase energy expenditure during sedentary activities, and may provide proximal environmental cues for increasing energy expenditure across multiple life domains. PMID:24035273

  7. Layer-by-layer engineered nanocapsules of curcumin with improved cell activity.

    PubMed

    Kittitheeranun, Paveenuch; Sajomsang, Warayuth; Phanpee, Sarunya; Treetong, Alongkot; Wutikhun, Tuksadon; Suktham, Kunat; Puttipipatkhachorn, Satit; Ruktanonchai, Uracha Rungsardthong

    2015-08-15

    Nanocarriers based on electrostatic Layer-by-layer (LbL) assembly of CaCO3 nanoparticles (CaCO3 NPs) was investigated. These inorganic nanoparticles was used as templates to construct nanocapsules made from films based on two oppositely charged polyelectrolytes, poly(diallyldimethylammonium chloride), and poly (sodium 4-styrene-sulfonate sodium salt), followed by core dissolution. The naked CaCO3 NPs, CaCO3 NPs coated with the polyelectrolytes and hollow nanocapsules were found with hexagonal shape with average sizes of 350-400 nm. A reversal of the surface charge between positive to negative zeta potential values was found, confirming the adsorption of polyelectrolytes. The loading efficiency and release of curcumin were controlled by the hydrophobic interactions between the drug and the polyelectrolyte matrix of the hollow nanocapsules. The quantity of curcumin released from hollow nanocapsules was found to increase under acidic environments, which is a desirable for anti-cancer drug delivery. The hollow nanocapsules were found to localize in the cytoplasm and nucleus compartment of Hela cancer cells after 24 h of incubation. Hollow nanocapsules were non-toxic to human fibroblast cells. Furthermore, curcumin loaded hollow nanocapsules exhibited higher in vitro cell inhibition against Hela cells than that of free curcumin, suggesting that polyelectrolyte based-hollow nanocapsules can be utilized as new carriers for drug delivery. PMID:26143232

  8. Multilayer polymer light emitting devices

    NASA Astrophysics Data System (ADS)

    Barcikowski, Zachary; Thomas, Adam; Tzolov, Marian

    2013-03-01

    The interplay of device layers and their interfaces is a major area of study in Polymer Light Emitting Devices (PLEDs). Many factors such as the degradation, efficiency, and overall performance depend on how these layers interact with each other. A fundamental understanding of the interfaces of these layers can lend to better performing devices using a multitude of organic polymers deposited in conjunction with each other in several ways. We have studied basic PLED devices in which we vary the emissive layer used, along with final bake temperatures. Devices include a glass substrate with Indium Tin Oxide anode, Aluminum cathode, and Plexcore Hole Injection layer. The active polymer films were spin casted from solution of MEH-PPV and PFO. Single layer and dual layers of several polymers are studied by examining current-voltage characteristics, film densities, impedance measurements, light emission, and efficiency calculations. We have found that not only do dual layers positively alter the performance of the device in the majority of cases, but the solvents in which each layer is originally in when deposited affects the formation of the interface, thereby altering the device mechanisms.

  9. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1-xGaxAs channel capping layer

    NASA Astrophysics Data System (ADS)

    Huang, Cheng-Hao; Li, Yiming

    2015-06-01

    In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor) devices with a channel capping layer. The impacts of thickness and gallium (Ga) concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1-xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF) resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  10. Fabric-based integrated energy devices for wearable activity monitors.

    PubMed

    Jung, Sungmook; Lee, Jongsu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

    2014-09-01

    A wearable fabric-based integrated power-supply system that generates energy triboelectrically using human activity and stores the generated energy in an integrated supercapacitor is developed. This system can be utilized as either a self-powered activity monitor or as a power supply for external wearable sensors. These demonstrations give new insights for the research of wearable electronics. PMID:25070873

  11. Water Pollution Scrubber Activity Simulates Pollution Control Devices.

    ERIC Educational Resources Information Center

    Kennedy, Edward C., III; Waggoner, Todd C.

    2003-01-01

    A laboratory activity caused students to think actively about water pollution. The students realized that it would be easier to keep water clean than to remove pollutants. They created a water scrubbing system allowing them to pour water in one end and have it emerge clean at the other end. (JOW)

  12. MEMS Device Being Developed for Active Cooling and Temperature Control

    NASA Technical Reports Server (NTRS)

    Moran, Matthew E.

    2001-01-01

    High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

  13. Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

    NASA Astrophysics Data System (ADS)

    Young, Nathan Garrett

    The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from

  14. Haptic device development based on electro static force of cellulose electro active paper

    NASA Astrophysics Data System (ADS)

    Yun, Gyu-young; Kim, Sang-Youn; Jang, Sang-Dong; Kim, Dong-Gu; Kim, Jaehwan

    2011-04-01

    Haptic is one of well-considered device which is suitable for demanding virtual reality applications such as medical equipment, mobile devices, the online marketing and so on. Nowadays, many of concepts for haptic devices have been suggested to meet the demand of industries. Cellulose has received much attention as an emerging smart material, named as electro-active paper (EAPap). The EAPap is attractive for mobile haptic devices due to its unique characteristics in terms of low actuation power, suitability for thin devices and transparency. In this paper, we suggest a new concept of haptic actuator with the use of cellulose EAPap. Its performance is evaluated depending on various actuation conditions. As a result, cellulose electrostatic force actuator shows a large output displacement and fast response, which is suitable for mobile haptic devices.

  15. Dual insulated-gate field-effect transistors with cadmium sulfide active layer and a laminated polymer dielectric

    NASA Astrophysics Data System (ADS)

    Meth, J. S.; Zane, S. G.; Nunes, G.

    2004-04-01

    We report the fabrication of dual insulated gate thin-film transistors with chemical-bath deposited cadmium sulfide active layers. The cadmium sulfide was deposited from solution onto thermally oxidized silicon wafers to form the first semiconductor-dielectric interface. The terpolymer poly(tetrafluoroethylene-co-vinylidenefluoride-co-propylene) was laminated onto the semiconductor to create the second semiconductor-dielectric interface. This device geometry allows direct comparison of the behavior of the accumulated charge at these two very different interfaces. The mobility values for these devices are in the 0.1-1 cm2/Vs range, while the on/off ratios vary from 102 to 105. The ability to laminate a dielectric to a semiconductor enables new processing routes for large area transistor arrays.

  16. Heat-activated cooling devices: A guidebook for general audiences

    SciTech Connect

    Wiltsee, G.

    1994-02-01

    Heat-activated cooling is refrigeration or air conditioning driven by heat instead of electricity. A mill or processing facility can us its waste fuel to air condition its offices or plant; using waste fuel in this way can save money. The four basic types of heat-activated cooling systems available today are absorption cycle, desiccant system, steam jet ejector, and steam turbine drive. Each is discussed, along with cool storage and biomass boilers. Steps in determining the feasibility of heat-activated cooling are discussed, as are biomass conversion, system cost and integration, permits, and contractor selection. Case studies are given.

  17. The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

    SciTech Connect

    Bovill, E.; Scarratt, N.; Griffin, J.; Buckley, A. R.; Lidzey, D. G.; Yi, H.; Iraqi, A.; Kingsley, J. W.

    2015-02-16

    We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC{sub 70}BM, and incorporated the different HTL materials PEDOT:PSS, MoO{sub x} and V{sub 2}O{sub 5}. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T{sub 80} lifetime of 14 500 h.

  18. Measurements of the PLT and PDX device activation

    SciTech Connect

    Stavely, J.; Barnes, C.W.; Chrien, R.E.; Strachan, J.D.

    1981-09-01

    Measurements of the activation levels around the PLT and PDX tokamaks have been made using a Ge(Li) gamma spectrometer and a Geiger counter. The activation results from radiation induced in the plasma by 14 MeV neutrons from the d(t,n)..cap alpha.. fusion reaction, 14.7 MeV protons from the d(/sup 3/He,p)..cap alpha.. fusion reaction, 10 ..-->.. 20 MeV hard x-rays from runaway electron induced bremmstrahlung, and 2.5 MeV neutrons from the d(d,n)/sup 3/He fusion reaction. The magnitude of the activation is compared to that predicted for PDX on the basis of one-dimensional activation codes.

  19. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal–oxide–semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm‑2 · eV‑1) and gate leakage current (9.32 × 10‑5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  20. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability. PMID:27349330

  1. Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

    SciTech Connect

    Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.; Heindl, Ranko

    2014-05-26

    In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power present in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.

  2. Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices

    SciTech Connect

    Lee, Albert Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov; Kim, Hoon; Choi, Kisik; Besser, Paul

    2014-01-15

    As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ∼4.6 eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

  3. Imaging of the native inversion layer in Silicon-On-Insulator wafers via Scanning Surface Photovoltage: Implications for RF device performance

    NASA Astrophysics Data System (ADS)

    Dahanayaka, Daminda; Wong, Andrew; Kaszuba, Philip; Moszkowicz, Leon; Slinkman, James; IBM SPV Lab Team

    2014-03-01

    Silicon-On-Insulator (SOI) technology has proved beneficial for RF cell phone technologies, which have equivalent performance to GaAs technologies. However, there is evident parasitic inversion layer under the Buried Oxide (BOX) at the interface with the high resistivity Si substrate. The latter is inferred from capacitance-voltage measurements on MOSCAPs. The inversion layer has adverse effects on RF device performance. We present data which, for the first time, show the extent of the inversion layer in the underlying substrate. This knowledge has driven processing techniques to suppress the inversion.

  4. Forecasting of electronic devices lifetime on the basis of activation models of functional parameters drift

    NASA Astrophysics Data System (ADS)

    Kozlova, I. N.

    2016-04-01

    We propose a model of functional parameters drift for electronic devices, allowing predicting their lifetime. The method of model parameters estimation is developed. The developed model allows optimizing the accelerated tests modes, taking into account the complex impact of stress factors. The results are applicable for modern electronic devices with a failure rate less than 1 FIT. The results are applicable if the physical and chemical processes leading to electronic devices degradation have an activation mechanism; the activation process is due to the temperature.

  5. Grain sorting in the morphological active layer of a braided river physical model

    NASA Astrophysics Data System (ADS)

    Leduc, P.; Ashmore, P.; Gardner, J. T.

    2015-12-01

    A physical scale model of a gravel-bed braided river was used to measure vertical grain size sorting in the morphological active layer aggregated over the width of the river. This vertical sorting is important for analyzing braided river sedimentology, for numerical modeling of braided river morphodynamics, and for measuring and predicting bedload transport rate. We define the morphological active layer as the bed material between the maximum and minimum bed elevations at a point over extended time periods sufficient for braiding processes to rework the river bed. The vertical extent of the active layer was measured using 40 hourly high-resolution DEMs (digital elevation models) of the model river bed. An image texture algorithm was used to map bed material grain size of each DEM. Analysis of the 40 DEMs and texture maps provides data on the geometry of the morphological active layer and variation in grain size in three dimensions. By normalizing active layer thickness and dividing into 10 sublayers, we show that all grain sizes occur with almost equal frequency in all sublayers. Occurrence of patches and strings of coarser (or finer) material relates to preservation of particular morpho-textural features within the active layer. For numerical modeling and bedload prediction, a morphological active layer that is fully mixed with respect to grain size is a reliable approximation.

  6. Electro- and photoluminescence imaging as fast screening technique of the layer uniformity and device degradation in planar perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Soufiani, Arman Mahboubi; Tayebjee, Murad J. Y.; Meyer, Steffen; Ho-Baillie, Anita; Sung Yun, Jae; MacQueen, Rowan W.; Spiccia, Leone; Green, Martin A.; Hameiri, Ziv

    2016-07-01

    In this study, we provide insights into planar structure methylammonium lead triiodide (MAPbI3) perovskite solar cells (PSCs) using electroluminescence and photoluminescence imaging techniques. We demonstrate the strength of these techniques in screening relatively large area PSCs, correlating the solar cell electrical parameters to the images and visualizing the features which contribute to the variation of the parameters extracted from current density-voltage characterizations. It is further used to investigate one of the major concerns about perovskite solar cells, their long term stability and aging. Upon storage under dark in dry glovebox condition for more than two months, the major parameter found to have deteriorated in electrical performance measurements was the fill factor; this was elucidated via electroluminescence image comparisons which revealed that the contacts' quality degrades. Interestingly, by deploying electroluminescence imaging, the significance of having a pin-hole free active layer is demonstrated. Pin-holes can grow over time and can cause degradation of the active layer surrounding them.

  7. Interstratified nanohybrid assembled by alternating cationic layered double hydroxide nanosheets and anionic layered titanate nanosheets with superior photocatalytic activity.

    PubMed

    Lin, Bizhou; Sun, Ping; Zhou, Yi; Jiang, Shaofeng; Gao, Bifen; Chen, Yilin

    2014-09-15

    Oppositely charged 2D inorganic nanosheets of ZnAl-layered double hydroxide and layered titanate were successfully assembled into an interstratified nanohybrid through simply mixing the corresponding nanosheet suspensions. Powder X-ray diffraction and high-resolution transmission electron microscope clearly revealed that the component nanosheets in the as-obtained nanohybrid ZnAl-Ti3O7 retain the 2D sheet skeletons of the pristine materials and that the two kinds of nanosheets are well arranged in a layer-by-layer alternating fashion with a basal spacing of about 1.3 nm, coincident with the thickness summation of the two component nanosheets. The effective interfacial heterojunction between them and the high specific surface area resulted in that the nanohybrid exhibits a superior photocatalytic activity in the degradation of methylene blue with a reaction constant k of 2.81 × 10(-2)min(-1), which is about 9 and 4 times higher than its precursors H2Ti3O7 and ZnAl-LDH, respectively. Based on UV-vis, XPS and photoelectrochemical measurements, a proposed photoexcitation model was provided to understand its photocatalytic behavior. PMID:25151238

  8. A thermophotovoltaic energy conversion device

    SciTech Connect

    Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

    1996-12-31

    A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

  9. Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

    NASA Technical Reports Server (NTRS)

    Zhang, Ting-Jun; Li, Shu-Sun

    2003-01-01

    The objective of this project is to map the spatial variation of the active layer over the arctic permafrost in terms of two parameters: (i) timing and duration of thaw period and (ii) differential frost heave and thaw settlement of the active layer. To achieve this goal, remote sensing, numerical modeling, and related field measurements are required. Tasks for the University of Colorado team are to: (i) determine the timing of snow disappearance in spring through changes in surface albedo (ii) simulate the freezing and thawing processes of the active layer and (iii) simulate the impact of snow cover on permafrost presence.

  10. Development of a novel neutron detection technique by using a boron layer coating a Charge Coupled Device

    SciTech Connect

    Blostein, Juan Jerónimo; Estrada, Juan; Tartaglione, Aureliano; Sofo haro, Miguel; Fernández Moroni, Guillermo; Cancelo, Gustavo

    2015-01-19

    This article describes the design features and the first test measurements obtained during the installation of a novel high resolution 2D neutron detection technique. The technique proposed in this work consists of a boron layer (enriched in ${^{10}}$B) placed on a scientific Charge Coupled Device (CCD). After the nuclear reaction ${^{10}}$B(n,$\\alpha$)${^{7}}$Li, the CCD detects the emitted charge particles thus obtaining information on the neutron absorption position. The above mentioned ionizing particles, with energies in the range 0.5-5.5 MeV, produce a plasma effect in the CCD which is recorded as a circular spot. This characteristic circular shape, as well as the relationship observed between the spot diameter and the charge collected, is used for the event recognition, allowing the discrimination of undesirable gamma events. We present the first results recently obtained with this technique, which has the potential to perform neutron tomography investigations with a spatial resolution better than that previously achieved. Numerical simulations indicate that the spatial resolution of this technique will be about 15 $\\mu$m, and the intrinsic detection efficiency for thermal neutrons will be about 3 %. We compare the proposed technique with other neutron detection techniques and analyze its advantages and disadvantages.

  11. Characteristics of flexographic printed indium-zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors

    NASA Astrophysics Data System (ADS)

    Dilfer, Stefan; Hoffmann, Rudolf C.; Dörsam, Edgar

    2014-11-01

    Characteristics of oxide semiconductor thin film transistors prepared by flexographic printing technique have been studied. The device was a field-effect transistor substrate (15 mm × 15 mm, n-doped silicon, 90 nm SiO2 layer) with pre-structured gold electrodes and a printed active layer. The active layer was printed with a indium-zinc-oxide precursor solution and then annealed at 450 °C for 4 min on a hotplate. Influences of typographical parameters, i.e. printing pressure, anilox roller pressure, ink supply rate, printing velocity and printing plate (cliché) properties were studied. Reference active layers were produced by spin coating. The printed IZO ceramic layer with a dry film thickness between 3 and 8 nm, deposited onto the substrate for field-effect transistors provided a good performance with charge carrier mobilities (μ) up to 2.4 cm2 V-1 s-1, on/off current ratios (Ion/off ratio) up to 5.2 × 107 and mean threshold voltages (Vth) of +4 V. The characterization of the printed and annealed IZO layer by AFM revealed the amorphous nature of the printed active layer films with a root-mean square roughness of 0.8 nm.

  12. Electron-blocking mechanisms at the hole transport layer-emissive layer interface in polymer light-emitting diodes: enhanced device performance with a novel electron-blocking interlayer

    NASA Astrophysics Data System (ADS)

    Yan, He; Marks, Tobin J.

    2004-11-01

    The interface between the hole transport layer (HTL) and emissive layer (EML) in polymer light-emitting diodes (PLEDs) has attracted intense research attentioin since the initial discovery of PLEDs in 1989. In this contribution, we analyze the electron-blocking properties of various HTL at this interface and their effect on PLED device performance. We find that poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) - a conventional PLED HTL - does not possess optimum electron-blocking properties and that PLED device performance can be significantly enhanced by inserting a new type of electron-blocking layer (EBL) between the PEDOT-PSS HTL and EML. The new EBLs developed in this study consist of two major components: a siloxane-derivatized, crosslinkable, TPD-like triarylamine hole-transporting material, such as 4,4"-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPDSi2), and a hole-transporting polymer, such as poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl) diphenylamine) (TFB). TPDSi2 undergoes crosslinking in air and rendering the TPDSi2 + TFB blend insoluble. With the TPDSi2 + TFB EBL inserted between PEDOT-PSS and BT layers, PLED device current density is reduced, device light output and current efficiency are dramatically increased (maximum current efficiency ~ 17 cd/A). Our result shows: 1) insufficient electron-blocking by PEDOT-PSS is another reason for the poor performance of PEDOT-PSS/BT based devices; 2) PLED device performance can be dramatically enhanced with a triarylamine siloxane-based EBLs.

  13. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    SciTech Connect

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  14. The Role of Organic Capping Layers of Platinum Nanoparticles in Catalytic Activity of CO Oxidation

    SciTech Connect

    Park, Jeong Y.; Aliaga, Cesar; Renzas, J. Russell; Lee, Hyunjoo; Somorjai, Gabor A.

    2008-12-17

    We report the catalytic activity of colloid platinum nanoparticles synthesized with different organic capping layers. On the molecular scale, the porous organic layers have open spaces that permit the reactant and product molecules to reach the metal surface. We carried out CO oxidation on several platinum nanoparticle systems capped with various organic molecules to investigate the role of the capping agent on catalytic activity. Platinum colloid nanoparticles with four types of capping layer have been used: TTAB (Tetradecyltrimethylammonium Bromide), HDA (hexadecylamine), HDT (hexadecylthiol), and PVP (poly(vinylpyrrolidone)). The reactivity of the Pt nanoparticles varied by 30%, with higher activity on TTAB coated nanoparticles and lower activity on HDT, while the activation energy remained between 27-28 kcal/mol. In separate experiments, the organic capping layers were partially removed using ultraviolet light-ozone generation techniques, which resulted in increased catalytic activity due to the removal of some of the organic layers. These results indicate that the nature of chemical bonding between organic capping layers and nanoparticle surfaces plays a role in determining the catalytic activity of platinum colloid nanoparticles for carbon monoxide oxidation.

  15. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  16. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  17. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  18. Optical-to-optical interface device. [consisting of two transparent electrodes on glass substrates that enclose thin film photoconductor and thin layer of nematic liquid crystal

    NASA Technical Reports Server (NTRS)

    Jacobson, A. D.

    1973-01-01

    Studies were conducted on the performance of a photoactivated dc liquid crystal light valve. The dc light valve is a thin film device that consists of two transparent electrodes, deposited on glass substrates, that enclose a thin film photoconductor (cadmium sulfide) and a thin layer of a nematic liquid crystal that operates in the dynamic scattering mode. The work was directed toward application of the light valve to high resolution non-coherent light to coherent light image conversion. The goal of these studies was to improve the performance and quality of the already existing dc light valve device and to evaluate quantitatively the properties and performance of the device as they relate to the coherent optical data processing application. As a result of these efforts, device sensitivity was improved by a factor of ten, device resolution was improved by a factor of three, device lifetime was improved by two-orders of magnitude, undesirable secondary liquid crystal scattering effects were eliminated, the scattering characteristics of the liquid crystal were thoroughly documented, the cosmetic quality of the devices was dramatically improved, and the performance of the device was fully documented.

  19. Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

    NASA Technical Reports Server (NTRS)

    Li, Shu-Sun; Romanovsky, V.; Lovick, Joe; Wang, Z.; Peterson, Rorik

    2003-01-01

    A method of mapping the active layer of Arctic permafrost using a combination of conventional synthetic aperture radar (SAR) backscatter and more sophisticated interferometric SAR (INSAR) techniques is proposed. The proposed research is based on the sensitivity of radar backscatter to the freeze and thaw status of the surface soil, and the sensitivity of INSAR techniques to centimeter- to sub-centimeter-level surface differential deformation. The former capability of SAR is investigated for deriving the timing and duration of the thaw period for surface soil of the active layer over permafrost. The latter is investigated for the feasibility of quantitative measurement of frost heaving and thaw settlement of the active layer during the freezing and thawing processes. The resulting knowledge contributes to remote sensing mapping of the active layer dynamics and Arctic land surface hydrology.

  20. Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices.

    SciTech Connect

    Auciello, O.; Materials Science Division

    2006-01-01

    The fabrication of the next generation of complex oxide thin film-based micro and nanoscale devices, such as, for example, low and high density nonvolatile ferroelectric random access memories (FeRAMS), high-dielectric constant (K) high-frequency devices, and the next generation of complimentary metal oxide semiconductor (CMOS) nanoscale devices based on high-K dielectrics, require understanding and control of film growth and interface processes as well as development of materials integration strategies with atomic scale control. In recent years, we developed and applied a unique combination of integrated film synthesis/in situ characterization and ex situ analytical techniques capable of providing information about thin film surface and interface processes at the atomic scale as required for the development of the devices mentioned above. These techniques are also useful for establishing composition-microstructure-property relationships critical for the integration of oxide thin films with semiconductor device platforms for the development of a whole new generation of micro and nanodevices based on film technologies beyond semiconductors and specifically silicon. Our recent work has been focused on developing diffusion barrier layers and heterostructured bottom electrodes that play a critical role in high-density FeRAM integration. We demonstrated that TiAl layers can be used as a material with a double diffusion barrier/bottom electrode functionality for integration of ferroelectric capacitors CMOS devices for fabrication of FeRAMs. We also demonstrated that control of interfaces is critical to the integration of high-K dielectric films with appropriate substrates for the fabrication of high-performance high-frequency devices, and here again a diffusion barrier such as the TiAl layer developed by our group is critical for such integration. These studies revealed that when properly oxidized, nanoscale thick amorphous Ti-Al-O layers exhibit properties that make

  1. Dynamics of the Thermal State of Active Layer at the Alaska North Slope and Northern Yakutia

    NASA Astrophysics Data System (ADS)

    Kholodov, A. L.; Romanovsky, V. E.; Marchenko, S.; Shiklomanov, N. I.; Fedorov-Davydov, D.

    2010-12-01

    Dynamics of the active layer is one of the most important indexes, reflecting permafrost response to the modern climate changes. Monitoring of active layer thickness dynamics is the main goal of CALM (Circumpolar Active Layer Monitoring) project. But, from different points of view, it is very important to know not only maximal depth of seasonal thawing but also dynamics of thermal field of active layer and duration of its staying in the unfrozen state. Current research was aimed on the analyzing data of temperature measurements have been done during the more then 10 years at the North Slope of Brooks Range (Alaska) and 2 years at the selected sites at the Northern Yakutia (Russia) and its comparison with the 17 to 10 years records of active layer thickness dynamics at the corresponding sites (http://www.udel.edu/Geography/calm/data/north.html). The area of investigation characterized by the typical tundra landscape and different kinds of micro topography. Reported observation sites located at the latitudinal range from 68.5 to 70.3N in Alaska and 70.5 to 71.75N in the Northern Yakutia. Observation have been done using the 1 meter long MRC probe with 11 sensors (every 10 cm) and single Campbell SCI A107 sensors in Alaska and 2-channel HOBO U23 data loggers with TMC-HD thermistors in the Northern Yakutia. Analyses of CALM data show what most observation sites in Alaska (except located near the Brooks Range and at the Arctic Ocean coast) do not subjected to the significant sustainable changes of active layer thickness over the last 10 years. At the same time active layer thickness at the Yakutian sites was increasing. Temperature observations show decreasing of the mean annual temperature at the average depth of active layer bottom at the Alaskan sites. But, because of general trend to increasing of period of thawing it does not lead to the decreasing of active layer thickness. Recent equipment deployment at the Tiksi and Allaikha sites (Northern Yakutia) does not

  2. Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

    PubMed Central

    Wang, Mingjun; Li, Yuan; Huang, Huihui; Peterson, Eric D.; Nie, Wanyi; Zhou, Wei; Zeng, Wei; Huang, Wenxiao; Fang, Guojia; Sun, Nanhai; Zhao, Xingzhong; Carroll, David L.

    2011-01-01

    Organic solar cells based on vertically aligned zinc oxide nanorod arrays (ZNR) in an inverted structure of indium tin oxide (ITO)∕ZNR∕poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester(P3HT:PCBM)∕MoO3∕aluminum(Al) were studied. We found that the optimum MoO3 layer thickness condition of 20 nm, the MoO3 can effectively decrease the probability of bimolecular recombination either at the Al interface or within the active layer itself. For this optimum condition we get a power conversion efficiency of 2.15%, a short-circuit current density of 9.02 mA∕cm2, an open-circuit voltage of 0.55V, and a fill factor of 0.44 under 100 mW∕cm2 irradiation. Our investigations also show that the highly crystallized ZNR can create short and continuous pathways for electron transport and increase the contact area between the ZNR and the organic materials. PMID:21464889

  3. Monolithic microwave integrated circuit devices for active array antennas

    NASA Technical Reports Server (NTRS)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  4. Optical electric fields as wavelength function within active layer of graphene/Si heterojunction solar cell – An analysis

    SciTech Connect

    Rosikhin, Ahmad Winata, Toto

    2015-09-30

    The optical electric field characteristics of graphene/Si heterojunction thin film solar cell as the function of wavelength photons incident have modeled and calculated. There is ITO/TiO{sub 2}/C-Si/TiO{sub 2} device configuration in which p-n junction represented by C-Si and viewed as active layer for excited electrons production. The dependent of such electric field on wavelength can be understood by solving scattering matrix obtained from the interface matrix and layer matrix operation, in this report we have calculated the electric field distribution for several active layer thickness (d{sub AL}) conditions and each of them examined in the cases of x position are equal to zero, half and full of d{sub AL} while for the entire taking into account we used 250 – 840 nm wavelength range. However, this calculation is restricted by idealization assumption such as the complex refraction index is doesn’t change significantly by the thickness in hundred nanometer range, linear optical response described by scalar refraction complex index and the interface are parallel and flat compared to the wavelength of the light.

  5. Effects of a Physical Education Supportive Curriculum and Technological Devices on Physical Activity

    ERIC Educational Resources Information Center

    Clapham, Emily Dean; Sullivan, Eileen C.; Ciccomascolo, Lori E.

    2015-01-01

    The purpose of this study was to examine the effects of a physical education supportive curriculum and technological devices, heart rate monitor (HRM) and pedometer (PED), on physical activity. A single-subject ABAB research design was used to examine amount and level of participation in physical activity among 106 suburban fourth and fifth…

  6. An Ungrounded Hand-Held Surgical Device Incorporating Active Constraints with Force-Feedback

    PubMed Central

    Payne, Christopher J.; Kwok, Ka-Wai; Yang, Guang-Zhong

    2014-01-01

    This paper presents an ungrounded, hand-held surgical device that incorporates active constraints and force-feedback. Optical tracking of the device and embedded actuation allow for real-time motion compensation of a surgical tool as an active constraint is encountered. The active constraints can be made soft, so that the surgical tool tip motion is scaled, or rigid, so as to altogether prevent the penetration of the active constraint. Force-feedback is also provided to the operator so as to indicate penetration of the active constraint boundary by the surgical tool. The device has been evaluated in detailed bench tests to quantify its motion scaling and force-feedback capabilities. The combined effects of force-feedback and motion compensation are demonstrated during palpation of an active constraint with rigid and soft boundaries. A user study evaluated the combined effect of motion compensation and force-feedback in preventing penetration of a rigid active constraint. The results have shown the potential of the device operating in an ungrounded setup that incorporates active constraints with force-feedback. PMID:24744963

  7. Following a protein kinase activity using a field-effect transistor device.

    PubMed

    Freeman, Ronit; Gill, Ron; Willner, Itamar

    2007-09-01

    The specific phosphorylation of a peptide-functionalized ion-sensitive field-effect transistor device by casein kinase II in the presence of ATP enables the electronic readout of the protein kinase activity; treatment of the phosphorylated surface with alkaline phosphatase results in the regeneration of the active sensing surface. PMID:17700878

  8. Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

    NASA Astrophysics Data System (ADS)

    Yuan, Yongbo; Lian, Jiarong; Li, Shuang; Zhou, Xiang

    2008-11-01

    Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq3) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq3 as the mass ratio of Alq3 to ADN was varied from 1 to 50%. The devices with an optimal Alq3 mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A-1 and 2.7% at a luminance of 1371 cd m-2, which is improved by a factor of 2.2 compared with 4.1 cd A-1 and 1.2% at a luminance of 3267 cd m-2 for conventional devices with the neat Alq3 as the EML.

  9. Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

    NASA Astrophysics Data System (ADS)

    Huang, Huolin; Liang, Yung Chii

    2015-12-01

    The formation of partial AlGaN trench recess filled with multiple fluorinated gate dielectric layers as metal-insulator-semiconductor (MIS) gate structure for GaN-based HEMT power devices is designed, fabricated and experimentally verified. The approach realizes the device normally-off operational mode and at the same time is able to preserve the good mobility in the 2DEG channel for a maximum on-state current. Experimental measurements on the fabricated MIS-HEMT devices indicate a high gate threshold voltage (Vth) at around 5 V and a very low gate leakage current at pA/mm level. This proposed gate structure provides very promising properties for GaN-based power semiconductor devices in future power electronics switching applications.

  10. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  11. Improving ice nucleation activity of zein film through layer-by-layer deposition of extracellular ice nucleators.

    PubMed

    Shi, Ke; Yu, Hailong; Lee, Tung-Ching; Huang, Qingrong

    2013-11-13

    Zein protein has been of scientific interest in the development of biodegradable functional food packaging. This study aimed at developing a novel zein-based biopolymer film with ice nucleation activity through layer-by-layer deposition of biogenic ice nucleators, that is, extracellular ice nucleators (ECINs) isolated from Erwinia herbicola , onto zein film surface. The adsorption behaviors and mechanisms were investigated using quartz crystal microbalance with dissipation monitoring (QCM-D). On unmodified zein surface, the highest ECINs adsorption occurred at pH 5.0; on UV/ozone treated zein surface followed by deposition of poly(diallyldimethylammonium chloride) (PDADMAC) layer, the optimum condition for ECINs adsorption occurred at pH 7.0 and I 0.05 M, where the amount of ECINs adsorbed was also higher than that on unmodified zein surface. QCM-D analyses further revealed a two-step adsorption process on unmodified zein surfaces, compared to a one-step adsorption process on PDADMAC-modified zein surface. Also, significantly, in order to quantify the ice nucleation activity of ECINs-coated zein films, an empirical method was developed to correlate the number of ice nucleators with the ice nucleation temperature measured by differential scanning calorimetry. Calculated using this empirical method, the highest ice nucleation activity of ECINs on ECINs-modified zein film reached 64.1 units/mm(2), which was able to elevate the ice nucleation temperature of distilled water from -15.5 °C to -7.3 °C. PMID:24106783

  12. Highly sensitive multi-layer pressure sensor with an active nanostructured layer of an organic molecular metal

    NASA Astrophysics Data System (ADS)

    Laukhin, V.; Lebedev, V.; Laukhina, E.; Rovira, C.; Veciana, J.

    2016-03-01

    This work addresses to the modern technologies that need to be instrumented with lightweight highly sensitive pressure sensors. The paper presents the development of a new plain flexible thin pressure sensor using a nanostructured layer of the highly sensitive organic piezoresistive metal β-(BEDT-TTF)2I3 as an active component; BEDT-TTF=bis (ethylenedithio)tetrathiafulvalene. The original construction approach permits one to operate the developed sensor on the principle of electrical resistance variations when its piezoresistive layer is elongated under a pressure increase. The pressure sensing element and a set of gold electrodes were integrated into one compact multi-layer design. The construction was optimized to enable one generic design for pressure ranges from 1 to 400 bar. The pressure tests showed that the sensor is able to control a small pressure change as a well definite electrical signal. So the developed type of the sensors is very attractive as a new generation of compact, lightweight, low-cost sensors that might monitor pressure with a good level of measurement accuracy.

  13. Crystallinity Modulation of Layered Carbon Nitride for Enhanced Photocatalytic Activities.

    PubMed

    Wang, Jianhai; Shen, Yanfei; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-08-22

    As an emerging metal-free semiconductor, covalently bonded carbon nitride (CN) has attracted much attention in photocatalysis. However, drawbacks such as a high recombination rate of excited electrons and holes hinder its potential applications. Tailoring the crystallinity of semiconductors is an important way to suppress unwanted charge recombination, but has rarely been applied to CN so far. Herein, a simple method to synthesize CN of high crystallinity by protonation of specific intermediate species during conventional polymerization is reported. Interestingly, the as-obtained CN exhibited improved photocatalytic activities of up to seven times those of the conventional bulk CN. This approach, with only a slight change to the conventional method, provides a facile way to effectively regulate the crystallinity of bulk CN to improve its photocatalytic activities and sheds light on large-scale industrial applications of CN with high efficiency for sustainable energy. PMID:27436164

  14. Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

    NASA Astrophysics Data System (ADS)

    Cheol Shin, Woo; Yong Kim, Taek; Sul, Onejae; Jin Cho, Byung

    2012-07-01

    We demonstrate that ultrathin poly(4-vinylphenol) (PVP) acts as an effective organic seeding layer for atomic layer deposition (ALD) of high-k dielectric on large-scale graphene fabricated by chemical vapor deposition (CVD). While identical ALD conditions result in incomplete and rough dielectric deposition on CVD graphene, the reactive groups provided by the PVP seeding layer yield conformal and pinhole-free dielectric films throughout the large-scale graphene. Top-gate graphene field effect transistors fabricated with the high quality, PVP-seeded Al2O3 gate dielectric show superior carrier mobility and enhanced reliability performance, which are desirable for graphene nanoelectronics.

  15. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  16. Effect of growth on the thermal resistance and survival of Salmonella Tennessee and Oranienburg in peanut butter, measured by a new thin-layer thermal death time device.

    PubMed

    Keller, Susanne E; Grasso, Elizabeth M; Halik, Lindsay A; Fleischman, Gregory J; Chirtel, Stuart J; Grove, Stephen F

    2012-06-01

    In published data the thermal destruction of Salmonella species in peanut butter deviates from pseudo-first-order kinetics. The reasons for such deviation are unknown. This study examined both the method used to measure the thermal destruction rate and the method of growth of the microorganisms to explain variations in destruction kinetics. Growth on a solid matrix results in a different physiological state that may provide greater resistance to adverse environments. In this study, Salmonella Tennessee and Oranienburg were grown for 24 h at 37°C under aerobic conditions in broth and agar media to represent planktonic and sessile cell growth, respectively. Peanut butter was held at 25°C and tested for Salmonella levels immediately after inoculation and at various time intervals up to 2 weeks. Thermal resistance was measured at 85°C by use of a newly developed thin-layer metal sample holder. Although thermal heat transfer through the metal device resulted in longer tau values than those obtained with plastic bags (32.5 ± 0.9 versus 12.4 ± 1.9 s), the bags have a relative variability of about 15 % compared with about 3 % in the plates, allowing improved uniformity of sample treatment. The two serovars tested in the thin-layer device showed similar overall thermal resistance levels in peanut butter regardless of growth in sessile or planktonic states. However, thermal destruction curves from sessile cultures exhibited greater linearity than those obtained from planktonic cells (P = 0.0198 and 0.0047 for Salmonella Oranienburg and Salmonella Tennessee, respectively). In addition, both Salmonella serovars showed significantly higher survival in peanut butter at 25°C when originally grown on solid media (P = 0.001) with a <1-log loss over 2 weeks as opposed to a 1- to 2-log loss when grown in liquid culture. Consequently, the use of cells grown on solid media may more accurately assess the survival of Salmonella at different temperatures in a low-water-activity

  17. Induced- and alternating-current electro-osmotic control of the diffusion layer growth in a microchannel-membrane interface device

    NASA Astrophysics Data System (ADS)

    Park, Sinwook; Yossifon, Gilad

    2014-11-01

    The passage of an electric current through an ionic permselective medium under an applied electric field is characterized by the formation of ionic concentration gradients, which result in regions of depleted and enriched ionic concentration at opposite ends of the medium. Induced-current electro-osmosis (ICEO) and alternating-current-electro-osmosis (ACEO) are shown to control the growth of the diffusion layer (DL) which, in turn, controls the diffusion limited ion transport through the microchannel-membrane system. We fabricated and tested devices made of a Nafion membrane connecting two opposite PDMS microchannels. An interdigitated electrode array was embedded within the microchannel with various distances from the microchannel-membrane interface. The induced ICEO (floating electrodes) / ACEO (active electrodes) vortices formed at the electrode array stir the fluid and thereby suppress the growth of the DL. The intensity of the ACEO vortices is controlled by either varying the voltage amplitude or the frequency, each having its own unique effect. Enhancement of the limiting current by on-demand control of the diffusion length is of importance in on-chip electro-dialysis, desalination and preconcentration of analytes.

  18. Contribution of S-Layer Proteins to the Mosquitocidal Activity of Lysinibacillus sphaericus

    PubMed Central

    Allievi, Mariana Claudia; Palomino, María Mercedes; Prado Acosta, Mariano; Lanati, Leonardo; Ruzal, Sandra Mónica; Sánchez-Rivas, Carmen

    2014-01-01

    Lysinibacillus sphaericus strains belonging the antigenic group H5a5b produce spores with larvicidal activity against larvae of Culex mosquitoes. C7, a new isolated strain, which presents similar biochemical characteristics and Bin toxins in their spores as the reference strain 2362, was, however, more active against larvae of Culex mosquitoes. The contribution of the surface layer protein (S-layer) to this behaviour was envisaged since this envelope protein has been implicated in the pathogenicity of several bacilli, and we had previously reported its association to spores. Microscopic observation by immunofluorescence detection with anti S-layer antibody in the spores confirms their attachment. S-layers and BinA and BinB toxins formed high molecular weight multimers in spores as shown by SDS-PAGE and western blot detection. Purified S-layer from both L. sphaericus C7 and 2362 strain cultures was by itself toxic against Culex sp larvae, however, that from C7 strain was also toxic against Aedes aegypti. Synergistic effect between purified S-layer and spore-crystal preparations was observed against Culex sp. and Aedes aegypti larvae. This effect was more evident with the C7 strain. In silico analyses of the S-layer sequence suggest the presence of chitin-binding and hemolytic domains. Both biochemical characteristics were detected for both S-layers strains that must justify their contribution to pathogenicity. PMID:25354162

  19. Efficient and Long-Lived Green Light-Emitting Diodes Based on ZnSSe:Te Active Layer

    NASA Astrophysics Data System (ADS)

    Lee, Hong Chan; Abe, Tomoki; Kaneko, Nobumasa; Adachi, Masahiro; Watanabe, Masashi; Fujita, Yusuke; Kasada, Hirofumi; Ando, Koshi

    2002-03-01

    Detailed optical characteristics of excitonic green emission/absorption in ZnSSe:Te epitaxial layers, grown by molecular beam epitaxy, were studied by photoluminescence (PL) and PL excitation measurements. Based on these optical properties, we have developed bright and long-lived green (˜500 nm) light-emitting diodes (LEDs) using ZnS0.11Se0.85:Te0.04 epilayers as active layers. The ZnSSe:Te-based LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 A/cm2 under CW condition at room temperature. The green LEDs show only slow-mode degradation, and the degradation mode is quite different from that of II-VI-based laser diodes (LDs) and LEDs employing the ZnCdSe-ZnSe system. It is confirmed that the Te-doping-induced “alloy-hardening effect” plays an important role in both efficient emission and strong suppression of the device degradation.

  20. Advances in Plexcore active layer technology systems for organic photovoltaics: roof-top and accelerated lifetime analysis of high performance organic photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Laird, Darin W.; Vaidya, Swanand; Li, Sergey; Mathai, Mathew; Woodworth, Brian; Sheina, Elena; Williams, Shawn; Hammond, Troy

    2007-09-01

    We report NREL-certified efficiencies and initial lifetime data for organic photovoltaic (OPV) cells based on Plexcore PV photoactive layer and Plexcore HTL-OPV hole transport layer technology. Plexcore PV-F3, a photoactive layer OPV ink, was certified in a single-layer OPV cell at the National Renewable Energy Laboratory (NREL) at 5.4%, which represents the highest official mark for a single-layer organic solar cell. We have fabricated and measured P3HT:PCBM solar cells with a peak efficiency of 4.4% and typical efficiencies of 3 - 4% (internal, NREL-calibrated measurement) with P3HT manufactured at Plextronics by the Grignard Metathesis (GRIM) method. Outdoor and accelerated lifetime testing of these devices is reported. Both Plexcore PV-F3 and P3HT:PCBM-based OPV cells exhibit >750 hours of outdoor roof-top, non-accelerated lifetime with less than 8% loss in initial efficiency for both active layer systems when exposed continuously to the climate of Western Pennsylvania. These devices are continuously being tested to date. Accelerated testing using a high-intensity (1000W) metal-halide lamp affords shorter lifetimes; however, the true acceleration factor is still to be determined.

  1. Active mode-locked lasers and other photonic devices using electro-optic whispering gallery mode resonators

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B. (Inventor); Ilchenko, Vladimir (Inventor); Savchenkov, Anatoliy (Inventor); Maleki, Lutfollah (Inventor)

    2006-01-01

    Techniques and devices using whispering gallery mode (WGM) optical resonators, where the optical materials of the WGM resonators exhibit an electro-optical effect to perform optical modulation. Examples of actively mode-locked lasers and other devices are described.

  2. Device and software used to carry out Cyclic Neutron Activation Analysis

    NASA Astrophysics Data System (ADS)

    Castro-García, M. P.; Rey-Ronco, M. A.; Alonso-Sánchez, T.

    2014-11-01

    This paper discusses the device and software used to carry out Cyclic Neutron Activation Analysis (CNAA). The aim of this investigation is defining through this device the fluorite content present on different samples from fluorspar concentration plant through the DGNAA (Delayed Gamma Neutron Activation Analysis) method. This device is made of americium-beryllium neutron source, NaI (2"×2") and BGO (2"×2") gamma rays detectors, multichannel and an automatic mechanism which moves the samples from activation and reading position. This mechanism is controlled by a software which allows moving the samples precisely and in a safe way (~ms), which it is very useful when the radioactive isotopes have to be detected with a half time less than 8s.

  3. Development of a portable device for telemonitoring of physical activities during sleep.

    PubMed

    Cheng, Chih-Ming; Hsu, Yeh-Liang; Young, Chang-Ming

    2008-12-01

    Low motor activity levels and prolonged episodes of uninterrupted immobility are characteristics of sleep. In clinical practice, the use of polysomnographic (PSG) recording is a standard procedure to assess sleep. However, PSG is not suitable for long-term monitoring in the home environment. This paper describes the development of a portable telemonitoring device that detects movements of a subject by conductive mats, and evaluates sleep stages via physical activity data. The device itself also serves as a Web server. Doctors and caregivers can access real-time and historical data via an IE browser or a remote application program for telemonitoring of physical activities and sleep/awake states during sleep, while the patients stay in their own homes. In our validation test with four normal subjects and four arousal subjects, this system showed a good performance in locating sleep epochs of a subject. The sensitivity of locating sleep epochs was 89.5% and the average positive prediction value was 94.8%, with a specificity of 84.3%. This device is not intended to be a diagnosis device, instead, it is to be used as a home telehealth tool for monitoring physical activity and sleep/awake states. This portable telemonitoring device provides a convenient approach to better understand and recognize a subject's sleep pattern through long-term sleep monitoring in the home environment. PMID:19119826

  4. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  5. Photovoltaic device

    SciTech Connect

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  6. Luminance Mechanisms of White Organic Light-Emitting Devices Fabricated Utilizing a Charge Generation Layer with a Light-Emitting Function.

    PubMed

    Kim, K H; Jeon, Y P; Choo, D C; Kim, T W

    2015-07-01

    The luminance mechanisms of the white organic light-emitting devices (WOLEDs) with a charge generation layer (CGL) consisting of a tungsten oxide layer and a 5,6,11,12-tetraphenyltetracene (rubrene) doped N,N',-bis-(1-naphthyl)-N,N'-diphenyl1-1'-biphenyl-4,4'-diamine (NPB) layer were investigated. Current densities and luminances of the WOLEDs increased with increasing a rubrene doping concentration because the formation of excitons in the rubrene-doped NPB layer increased due to the more exciton trapping in rubrene molecules and the delay of the electron injection due to the insertion of the litium qunolate layer. The yellow light emitted from the rubrene-doped NPB layer in the CGL combined with the blue light from the main emitting layer of the WOLEDs, resulting in the emission of the white light. The ratio between the yellow and the blue color peak intensities of the electroluminescence spectra for the WOLEDs was controlled by the rubrene doping concentration. The Commission Internationale de l'Eclairage coordinates of the fabricated WOLED were (0.31, 0.42) at 740.7 cd/m2, indicative of white emission color. PMID:26373110

  7. Active control of all-fibre graphene devices with electrical gating.

    PubMed

    Lee, Eun Jung; Choi, Sun Young; Jeong, Hwanseong; Park, Nam Hun; Yim, Woongbin; Kim, Mi Hye; Park, Jae-Ku; Son, Suyeon; Bae, Sukang; Kim, Sang Jin; Lee, Kwanil; Ahn, Yeong Hwan; Ahn, Kwang Jun; Hong, Byung Hee; Park, Ji-Yong; Rotermund, Fabian; Yeom, Dong-Il

    2015-01-01

    Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light-matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene-light interaction. PMID:25897687

  8. Active control of all-fibre graphene devices with electrical gating

    PubMed Central

    Lee, Eun Jung; Choi, Sun Young; Jeong, Hwanseong; Park, Nam Hun; Yim, Woongbin; Kim, Mi Hye; Park, Jae-Ku; Son, Suyeon; Bae, Sukang; Kim, Sang Jin; Lee, Kwanil; Ahn, Yeong Hwan; Ahn, Kwang Jun; Hong, Byung Hee; Park, Ji-Yong; Rotermund, Fabian; Yeom, Dong-Il

    2015-01-01

    Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene–light interaction. PMID:25897687

  9. Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO 2-GaAs metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Shripathi, T.; Banerji, P.

    2011-12-01

    This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin ( ˜2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO 2. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO 2/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.

  10. Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials: A case study on MoSe{sub 2}

    SciTech Connect

    Utama, M. Iqbal Bakti; Lu, Xin; Yuan, Yanwen; Xiong, Qihua

    2014-12-22

    Seed catalyst such as perylene-3,4,9,10-tetracarboxylic acid tetrapotassium (PTAS) salt has been used for promoting the growth of atomically thin layered materials in chemical vapor deposition (CVD) synthesis. However, the ramifications from the usage of such catalyst are not known comprehensively. Here, we report the influence of PTAS seeding on the transistor device performance from few-layered CVD-grown molybdenum diselenide (MoSe{sub 2}) flakes. While better repeatability and higher yield can be obtained with the use of PTAS seeds in synthesis, we observed that PTAS-seeded flakes contain particle impurities. Moreover, devices from PTAS-seeded MoSe{sub 2} flakes consistently displayed poorer field-effect mobility, current on-off ratio, and subthreshold swing as compared to unseeded flakes.

  11. OLED devices

    DOEpatents

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  12. Single-layer electroluminescent devices based on fluorene-1H-pyrazolo[3,4-b]quinoxaline co-polymers

    NASA Astrophysics Data System (ADS)

    Pokladko-Kowar, Monika; Danel, Andrzej; Chacaga, Łukasz

    2013-11-01

    A fluorene based copolymer was synthesized for electroluminescent application. To the main chain of polymer the nitrogen heterocyclic, 1H-pyrazolo[3,4-b]quinoxaline, unit was introduced. The incorporation of this derivative tuned the emission from the blue to yellow-green one. A simple, single layered device was fabricated with the configuration ITO/PEDOT/co-poly-FLU-PQX/Ca/Mg.

  13. Interannual active layer thermal and dynamics evolution at the crater Lake CALM site, Deception Island (Antarctica).

    NASA Astrophysics Data System (ADS)

    Ramos, Miguel; Vieira, Gonzalo; Ángel De Pablo, Miguel; Molina, Antonio; Abramov, Andrey

    2015-04-01

    Deception Island, is an active strato-volcano on South Shetland Archipelago of Antarctica (62° 55' 0″ S, 60° 37' 0″ W), is a cold region with harsh remote and hostile environmental conditions. The permafrost and active layer existence, and the cold climate conditions together with volcanic material with height water content inside made this region of the Earth a perfect site to study the active layer and permafrost evolution involved in the Circumpolar Active Layer South (CALM-S) program. The active layer is measured in late January or firs february (during the end of the thaw period) at the "Crater Lake" CALM site (62°58'06.7''; 60°40'44.8'') on Deception Island, Antarctica, at the period 2006 to 2014 we obtained a mean annual value of 29,7±2 cm. In this paper, we describe the spatial active layer thickness distribution and report the reduction on the mean thickness between February 2006 and 2014. Below the active layer, permafrost could be also reported (with a mean thickness of 4.5± 0.5 m.) based on the temperature data acquired by sensors installed at different depth inside the soil; three different shallow boreholes was drilled (1.0 m., 1.6 m., 4.5 m. in depth) and we have been registered its temperature gradient at the 2010 to 2013 period. Here we use all those data 1) to describe the thermal behavior of the permafrost at the CALM site, and 2) to describe its evolution (aggradation/degradation) along fourteen years of continuous measurements. We develop this study, to known the thermal behavior of the permafrost and the active layer related with the air/soil interaction being one of the most important factors the snow layer that was measured by the installation of termo-snowmeters with the complement of an automatic digital camera during the 2008 to 2014 period. On the other hand, the pyroclastics soil materials has a very high values of water content then the latent heat in the freezing/thawing process controls the active layer evolution and the

  14. Seismic Response Control Of Structures Using Semi-Active and Passive Variable Stiffness Devices

    NASA Astrophysics Data System (ADS)

    Salem, Mohamed M. A.

    Controllable devices such as Magneto-Rheological Fluid Dampers, Electro-Rheological Dampers, and controllable friction devices have been studied extensively with limited implementation in real structures. Such devices have shown great potential in reducing seismic demands, either as smart base isolation systems, or as smart devices for multistory structures. Although variable stiffness devices can be used for seismic control of structures, the vast majority of research effort has been given to the control of damping. The primary focus of this dissertation is to evaluate the seismic control of structures using semi-active and passive variable stiffness characteristics. Smart base isolation systems employing variable stiffness devices have been studied, and two semi-active control strategies are proposed. The control algorithms were designed to reduce the superstructure and base accelerations of seismically isolated structures subject to near-fault and far-field ground motions. Computational simulations of the proposed control algorithms on the benchmark structure have shown that excessive base displacements associated with the near-fault ground motions may be better mitigated with the use of variable stiffness devices. However, the device properties must be controllable to produce a wide range of stiffness changes for an effective control of the base displacements. The potential of controllable stiffness devices in limiting the base displacement due to near-fault excitation without compromising the performance of conventionally isolated structures, is illustrated. The application of passive variable stiffness devices for seismic response mitigation of multistory structures is also investigated. A stiffening bracing system (SBS) is proposed to replace the conventional bracing systems of braced frames. An optimization process for the SBS parameters has been developed. The main objective of the design process is to maintain a uniform inter-story drift angle over the

  15. Photoelectron spectroscopic imaging and device applications of large-area patternable single-layer MoS2 synthesized by chemical vapor deposition.

    PubMed

    Park, Woanseo; Baik, Jaeyoon; Kim, Tae-Young; Cho, Kyungjune; Hong, Woong-Ki; Shin, Hyun-Joon; Lee, Takhee

    2014-05-27

    Molybdenum disulfide (MoS2) films, which are only a single atomic layer thick, have been synthesized by chemical vapor deposition (CVD) and have gained significant attention due to their band-gap semiconducting properties. However, in order for them to be useful for the fabrication of practical devices, patterning processes that can be used to form specific MoS2 structures must be integrated with the existing synthetic approaches. Here, we report a method for the synthesis of centimeter-scale, high-quality single-layer MoS2 that can be directly patterned during CVD, so that postpatterning processes can be avoided and device fabrication can be streamlined. Utilizing X-ray photoelectron spectroscopic imaging, we characterize the chemical states of these CVD-synthesized single-layer MoS2 films and demonstrate that the triangular-shaped MoS2 are single-crystalline single-domain monolayers. We also demonstrate the use of these high-quality and directly patterned MoS2 films in electronic device applications by fabricating and characterizing field effect transistors. PMID:24730654

  16. Method and apparatus for increasing resistance of bipolar buried layer integrated circuit devices to single-event upsets

    NASA Technical Reports Server (NTRS)

    Zoutendyk, John A. (Inventor)

    1991-01-01

    Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate. To increase the resistance of the bipolar transistors to single-event upsets due to ionized particle radiation, the substrate is biased relative to the buried layer with an external bias voltage selected to offset the built-in potential just enough (typically between about +0.1 to +0.2 volt) to prevent an accumulation of charge in the buried-layer-substrate junction.

  17. Rapid electrostatics-assisted layer-by-layer assembly of near-infrared-active colloidal photonic crystals.

    PubMed

    Askar, Khalid; Leo, Sin-Yen; Xu, Can; Liu, Danielle; Jiang, Peng

    2016-11-15

    Here we report a rapid and scalable bottom-up technique for layer-by-layer (LBL) assembling near-infrared-active colloidal photonic crystals consisting of large (⩾1μm) silica microspheres. By combining a new electrostatics-assisted colloidal transferring approach with spontaneous colloidal crystallization at an air/water interface, we have demonstrated that the crystal transfer speed of traditional Langmuir-Blodgett-based colloidal assembly technologies can be enhanced by nearly 2 orders of magnitude. Importantly, the crystalline quality of the resultant photonic crystals is not compromised by this rapid colloidal assembly approach. They exhibit thickness-dependent near-infrared stop bands and well-defined Fabry-Perot fringes in the specular transmission and reflection spectra, which match well with the theoretical calculations using a scalar-wave approximation model and Fabry-Perot analysis. This simple yet scalable bottom-up technology can significantly improve the throughput in assembling large-area, multilayer colloidal crystals, which are of great technological importance in a variety of optical and non-optical applications ranging from all-optical integrated circuits to tissue engineering. PMID:27494632

  18. Layer-by-layer carbon nanotube bio-templates for in situ monitoring of the metabolic activity of nitrifying bacteria

    NASA Astrophysics Data System (ADS)

    Loh, Kenneth J.; Guest, Jeremy S.; Ho, Genevieve; Lynch, Jerome P.; Love, Nancy G.

    2009-03-01

    Despite the wide variety of effective disinfection and wastewater treatment techniques for removing organic and inorganic wastes, pollutants such as nitrogen remain in wastewater effluents. If left untreated, these nitrogenous wastes can adversely impact the environment by promoting the overgrowth of aquatic plants, depleting dissolved oxygen, and causing eutrophication. Although nitrification/denitrification processes are employed during advanced wastewater treatment, effective and efficient operation of these facilities require information of the pH, dissolved oxygen content, among many other parameters, of the wastewater effluent. In this preliminary study, a biocompatible CNT-based nanocomposite is proposed and validated for monitoring the biological metabolic activity of nitrifying bacteria in wastewater effluent environments (i.e., to monitor the nitrification process). Using carbon nanotubes and a pH-sensitive conductive polymer (i.e., poly(aniline) emeraldine base), a layer-by-layer fabrication technique is employed to fabricate a novel thin film pH sensor that changes its electrical properties in response to variations in ambient pH environments. Laboratory studies are conducted to evaluate the proposed nanocomposite's biocompatibility with wastewater effluent environments and its pH sensing performance.

  19. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

    PubMed Central

    2014-01-01

    In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 1013 cm-2, resistivity at 4.6 × 10-3 Ω∙cm, and Hall mobility at 14.6 cm2/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm2/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm2/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs. PMID:25435832

  20. Carbon nanotubes supported cerium dioxide and platinum nanohybrids: Layer-by-layer synthesis and enhanced electrocatalytic activity for methanol oxidation

    NASA Astrophysics Data System (ADS)

    Lou, Xinyuan; Chen, Jiayi; Wang, Mengdi; Gu, Jialei; Wu, Ping; Sun, Dongmei; Tang, Yawen

    2015-08-01

    We successfully synthesize carbon nanotubes (CNTs) supported cerium dioxide and platinum (Pt/CeO2/CNTs) nanohybrids via layer-by-layer assembly. The composition, morphology and structure of the as-prepared Pt/CeO2/CNTs nanohybrids are characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectrometer (EDX), selected-area electron diffraction (SAED), X-ray diffraction (XRD), thermogravimetric analysis (TGA), and inductively coupled plasma atomic emission spectrometry (ICP-AES). By comparison of the electrocatalytic properties of the Pt/CeO2/CNTs with the Pt/CNTs, we systematically investigate the promotion effect of CeO2 on the Pt/CeO2/CNTs catalysts towards methanol oxidation. It is found that the introduction of CeO2 not only enhances the electrocatalytic activity and stability of the Pt/CeO2/CNTs catalyst for methanol oxidation but also minimizes the CO poisoning, probably accounting for the good oxygen carrying capacity of CeO2 and its high stability in acidic solution.

  1. Organic-inorganic heterostructure electroluminescent device using a layered perovskite semiconductor (C6H5C2H4NH3)2PbI4

    NASA Astrophysics Data System (ADS)

    Era, M.; Morimoto, S.; Tsutsui, T.; Saito, S.

    1994-08-01

    Using the combination of a layered perovskite compound (C6H5C2H4NH3)2PbI4 (PAPI), which forms a stable exciton with a large binding energy owing to its low-dimensional semiconductor nature and exhibits sharp and strong photoluminescence from the exciton band, and an electron-transporting oxadiazole derivative, we fabricated an organic-inorganic heterostructure electroluminescent (EL) device. The EL spectrum of the device corresponded well to the photoluminescence spectrum of the PAPI film; the emission was peaking at 520 nm and half-width of the emission was about 10 nm at liquid-nitrogen temperature. Further, highly intense EL of more than 10 000 cd m-2 was performed at 2 A cm-2 at liquid-nitrogen temperature in the device.

  2. Passive active resonant coupler (PARC): A new platform for monolithic integration of photonic devices

    NASA Astrophysics Data System (ADS)

    Saini, Simarjeet

    The explosive growth of telecommunications and data traffic in recent years has hastened the emergence of optical communication networks. As the volume and complexity of network traffic increases, efficient methods are required for routing and distributing the associated optical signals. This in turn has put pressure on optical device technologies. Not only are new and more complex devices required, but they must also be manufactured and packaged in a cost-efficient way. Soon, there will be a shift in the paradigm from using discrete packaged devices in a module to monolithically integrated photonic circuits where multiple functions are achieved in a single chip. This offers a considerable challenge and a great opportunity for device engineers. It is the goal of this work to continue and expand the sphere of knowledge and applicability of Photonic Integrated circuits (PIC's) by proposing and demonstrating a new platform technology for monolithically integrating various active and passive optical devices. The platform, which has been named the ``Passive Active Resonant Coupler (PARC)'', utilizes single epitaxial growth and conventional fabrication schemes. PARC devices rely on coupling between vertical waveguides where each waveguide is optimized for its specific functionality. The coupling is achieved by using a new proposed scheme of resonance over some specially designed tapers. It has been shown experimentally for the first time that very high coupling efficiencies (less than 1 dB loss) can be achieved over very short lengths, typically less than 100 μm. Coupling between different kinds of active and passive waveguides has been experimentally demonstrated. A few basic PIC's such as the 1 × 2 optical switch and the 2 × 2 cross-point switch have been demonstrated by integrating active and passive waveguides using the PARC platform. The demonstrated integration work is in the 1.55 μm wavelength range using InP as a substrate. However, the PARC platform is

  3. Controlling hole-transport in aluminum tris (8-hydroxyquinoline), Alq3-based organic light emitting diodes to improve the device lifetime by an oxidized transport layer

    NASA Astrophysics Data System (ADS)

    Mathai, Mathew K.; Papadimitrakopoulos, Fotios; Hsieh, Bing R.

    2004-06-01

    A salt containing polymer, called an oxidized transport layer (OTL), was investigated for hole injection and transport into Alq3-based multilayered organic light emitting diode (OLED) devices. The OTL comprises an aryldiamine containing hole transport polymer binder with a corresponding low molecular weight radical cation salt. We demonstrate herein that the OTL behaves like a tunable resistor for holes, and its hole-transport properties can be controlled by the salt concentration and thickness of the OTL. Based on a careful analysis of the current density-voltage (J-V) device characteristics as a function of the above parameters, electron/hole currents were balanced to minimize oxidative degradation of Alq3. It was found that an OLED device (ITO/OTL/NPB/Alq3/CsF/Al) with a 5000 Å thick OTL at 5% salt concentration operated with a half-life exceeding 1000 h at a constant current of 10 mA/cm2. Similar devices with 2.5% and 10% salt doping showed an order of magnitude lower half-life attributed to unbalanced carrier concentrations. Moreover, by demonstrating that the majority of the field drops across the Alq3 layer, the doping level as opposed to OTL thickness was established as the primary contributor controlling hole transport in these OLEDs. This beneficial behavior is, however, observed only above a certain OTL thickness in the vicinity of 5000 Å.

  4. A comparison of the effect of joule heating vs thermal annealing on the morphology of typical hole transport layers in organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Davidson-Hall, Tyler; Aziz, Hany

    2015-09-01

    It is well-known that hole transport layers (HTLs) in organic light emitting devices (OLEDs) are more sensitive to morphological changes than other organic layers due to the lower glass transition temperatures. A high operational temperature can alter the HTL morphology, severely impacting OLED performance and stability. Although joule heating is a known factor affecting OLED stability during operation, its effect in experimental studies is typically simulated through thermal annealing of the devices rather than applying current. In this work, a comparison of the effects of joule heating vs thermal annealing on the morphological stability of N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB) and N,N'-Dicarbazolyl-4,4'-biphenyl (CBP) HTLs and the impact this has on OLED performance is investigated. While thermal annealing of an OLED can be used as an approximation of joule heating, the temperature distribution profile of the OLED is different under the two stress conditions and thus can impact the morphology of the HTL differently. However, joule heating introduces a confounding factor whereby the OLEDs experience intrinsic degradation by the flow of current, aside from thermal stress. Therefore, in this work, joule heating is studied in unipolar devices that comprise solely of the HTL. Device JVL and morphology as a function of temperature for both joule heating and thermal annealing are presented as a means to evaluate stability and performance.

  5. Thermally activated hysteresis in high quality graphene/h-BN devices

    NASA Astrophysics Data System (ADS)

    Cadore, A. R.; Mania, E.; Watanabe, K.; Taniguchi, T.; Lacerda, R. G.; Campos, L. C.

    2016-06-01

    We report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride (h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375 K. In order to investigate the origin of the hysteretic phenomenon, we compare graphene/h-BN heterostructure devices with SiO2/Si back gate electrodes to devices with graphite back gate electrodes. The gate hysteretic behavior of the resistance is present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. We describe a phenomenological model which captures all of our findings based on charges trapped at the h-BN/SiO2 interface. Such hysteretic behavior in graphene resistance must be considered in high temperature applications for graphene devices and may open new routes for applications in digital electronics and memory devices.

  6. ACTIVE DELIVERY CABLE TUNED TO DEVICE DEPLOYMENT STATE: ENHANCED VISIBILITY OF NITINOL OCCLUDERS DURING PRE-CLINICAL INTERVENTIONAL MRI

    PubMed Central

    Bell, Jamie A.; Saikus, Christina E.; Ratnayaka, Kanishka; Barbash, Israel M.; Faranesh, Anthony Z.; Franson, Dominique N.; Sonmez, Merdim; Slack, Michael C.; Lederman, Robert J.; Kocaturk, Ozgur

    2012-01-01

    Purpose To develop an active delivery system that enhances visualization of nitinol cardiac occluder devices during deployment under real-time MRI. Materials and Methods We constructed an active delivery cable incorporating a loopless antenna and a custom titanium microscrew to secure the occluder devices. The delivery cable was tuned and matched to 50Ω at 64 MHz with the occluder device attached. We used real-time balanced SSFP in a wide-bore 1.5T scanner. Device-related images were reconstructed separately and combined with surface-coil images. The delivery cable was tested in vitro in a phantom and in vivo in swine using a variety of nitinol cardiac occluder devices. Results In vitro, the active delivery cable provided little signal when the occluder device was detached and maximal signal with the device attached. In vivo, signal from the active delivery cable enabled clear visualization of occluder device during positioning and deployment. Device release resulted in decreased signal from the active cable. Post-mortem examination confirmed proper device placement. Conclusions The active delivery cable enhanced the MRI depiction of nitinol cardiac occluder devices during positioning and deployment, both in conventional and novel applications. We expect enhanced visibility to contribute to effectiveness and safety of new and emerging MRI-guided treatments. PMID:22707441

  7. One-step fabrication of triple-layered microcapsules by a tri-axial flow focusing device for microencapsulation of soluble drugs and imaging agents

    NASA Astrophysics Data System (ADS)

    Yuan, Shuai; Wu, Qiang; Lei, Fan; Li, Guangbin; Si, Ting; Xu, Ronald X.

    2016-04-01

    In this work, the microencapsulation of water-soluble drug (doxorubicin, Dox) and imaging agent (perfluorocarbon, PFC) is performed by a novel liquid driven tri-axial flow focusing (LDTFF) device. The formation of stable triple-layered cone-jet mode can be observed in the simple well-assembled LDTFF device, providing an easy approach to fabricate mono-disperse triple-layered microcapsules with high encapsulation efficiency, high throughput and low cost in just one step. The fluorescence images show that the microcapsules have a satisfactory core-shell structure. The SEM micrographs show spherical and smooth surface views of the triple-layered microcapsules after being stirred 72h to remove the organic solvent totally. The results of thermo-responsive release experiments of the produced triple-layered microcapsules show these multifunctional capsules can be well stimulated when the environment temperature is beyond 55 degree centigrade. In a word, this novel approach has a great potential in applications such as drug delivery and image-guided therapy.

  8. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: White organic light-emitting device with both phosphorescent and fluorescent emissive layers

    NASA Astrophysics Data System (ADS)

    Zhang, Li-Juan; Hua, Yu-Lin; Wu, Xiao-Ming; Wang, Yu; Yin, Shou-Geng

    2008-08-01

    This paper reports the fabrication of novel white organic light-emitting device(WOLED) by using a high efficiency blue fluorescent dye N-(4-((E)-2-(6-((E)-4-(diphenylamino)styryl)naphthalen-2-yl)vinyl)phenyl)-N-phenylbenzenamine (N-BDAVBi) and a red phosphoresecent dye bis (1-(phenyl) isoquinoline) iridium (III) acetylanetonate (Ir(piq)2(acac)). The configuration of the device was ITO/PVK:TPD/CBP:N-BDAVBi /CBP/ BALq: Ir(piq)2(acac)/BCP/Alq3/LiF:AL. By adjusting the proportion of the dopants (N-BDAVBi, Ir(piq)2(acac)) in the light-emitting layer, white light with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35, 0.35) and a maximum luminance of 25350cd/m2 were obtained at an applied voltage of 22V. The WOLED exhibits maximum external quantum and current efficiency of 6.78% and 12cd/A respectively. By placing an undoped spacer CBP layer between the two light-emitting layers and using BCP as hole blocking layer, the colour stabilization slightly changed when the driving voltage increased from 6 to 22 V.

  9. Design strategy for 25% external quantum efficiency in green and blue thermally activated delayed fluorescent devices.

    PubMed

    Lee, Dong Ryun; Kim, Mounggon; Jeon, Sang Kyu; Hwang, Seok-Ho; Lee, Chil Won; Lee, Jun Yeob

    2015-10-21

    Carbazole- and triazine-derived thermally activated delayed fluorescent (TADF) emitters, with three donor units and an even distribution of the highest occupied molecular orbital, achieve high external quantum efficiencies of above 25% in blue and green TADF devices. PMID:26308481

  10. Benzofurocarbazole and benzothienocarbazole as donors for improved quantum efficiency in blue thermally activated delayed fluorescent devices.

    PubMed

    Lee, Dong Ryun; Hwang, Seok-Ho; Jeon, Sang Kyu; Lee, Chil Won; Lee, Jun Yeob

    2015-05-11

    Benzofurocarbazole and benzothienocarbazole were used as electron donors of thermally activated delayed fluorescence (TADF) emitters and the performances of the TADF devices were examined. The benzofurocarbazole and benzothienocarbazole donor moieties were better than carbazole as the electron donors of the TADF emitters. PMID:25869643

  11. Discrete-Layer Piezoelectric Plate and Shell Models for Active Tip-Clearance Control

    NASA Technical Reports Server (NTRS)

    Heyliger, P. R.; Ramirez, G.; Pei, K. C.

    1994-01-01

    The objectives of this work were to develop computational tools for the analysis of active-sensory composite structures with added or embedded piezoelectric layers. The targeted application for this class of smart composite laminates and the analytical development is the accomplishment of active tip-clearance control in turbomachinery components. Two distinct theories and analytical models were developed and explored under this contract: (1) a discrete-layer plate theory and corresponding computational models, and (2) a three dimensional general discrete-layer element generated in curvilinear coordinates for modeling laminated composite piezoelectric shells. Both models were developed from the complete electromechanical constitutive relations of piezoelectric materials, and incorporate both displacements and potentials as state variables. This report describes the development and results of these models. The discrete-layer theories imply that the displacement field and electrostatic potential through-the-thickness of the laminate are described over an individual layer rather than as a smeared function over the thickness of the entire plate or shell thickness. This is especially crucial for composites with embedded piezoelectric layers, as the actuating and sensing elements within these layers are poorly represented by effective or smeared properties. Linear Lagrange interpolation polynomials were used to describe the through-thickness laminate behavior. Both analytic and finite element approximations were used in the plane or surface of the structure. In this context, theoretical developments are presented for the discrete-layer plate theory, the discrete-layer shell theory, and the formulation of an exact solution for simply-supported piezoelectric plates. Finally, evaluations and results from a number of separate examples are presented for the static and dynamic analysis of the plate geometry. Comparisons between the different approaches are provided when

  12. Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

    PubMed

    George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

    2015-06-24

    The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices. PMID:26043103

  13. Spatial and electrical switching of defect modes in a photonic bandgap device with a polymer-dispersed liquid crystal defect layer.

    PubMed

    Wu, Po-Chang; Yeh, En-Rong; Zyryanov, Victor Ya; Lee, Wei

    2014-08-25

    This paper investigates the spectral properties of a one-dimensional photonic crystal (PC) containing an inhomogeneous polymer- dispersed liquid crystal (PDLC) as a defect layer. Experimental results indicate that the voltage-induced reorientation of LC molecules between the light-scattering and transparent states in the PDLC enables the electrical tuning of the transmittance of defect-mode peaks in the spectrum of the PC/PDLC cell. Specifically, owing to the unique configuration of the spatial distribution of LC droplet sizes in the defect layer, a concept concerning the spatial switching in the wavelength of defect modes is proposed. As a result, the PC/PDLC hybrid cell is suggested as a potential element for realizing an electrically tunable and spatially switchable photonic bandgap device, which is polarizer-free and requires no alignment layers in the fabrication process. PMID:25321237

  14. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    PubMed

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs. PMID:27459343

  15. Integrated circuit with dissipative layer for photogenerated carriers

    DOEpatents

    Myers, D.R.

    1988-04-20

    The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.

  16. Contrasting effects of strabismic amblyopia on metabolic activity in superficial and deep layers of striate cortex.

    PubMed

    Adams, Daniel L; Economides, John R; Horton, Jonathan C

    2015-05-01

    To probe the mechanism of visual suppression, we have raised macaques with strabismus by disinserting the medial rectus muscle in each eye at 1 mo of age. Typically, this operation produces a comitant, alternating exotropia with normal acuity in each eye. Here we describe an unusual occurrence: the development of severe amblyopia in one eye of a monkey after induction of exotropia. Shortly after surgery, the animal demonstrated a strong fixation preference for the left eye, with apparent suppression of the right eye. Later, behavioral testing showed inability to track or to saccade to targets with the right eye. With the left eye occluded, the animal demonstrated no visually guided behavior. Optokinetic nystagmus was absent in the right eye. Metabolic activity in striate cortex was assessed by processing the tissue for cytochrome oxidase (CO). Amblyopia caused loss of CO in one eye's rows of patches, presumably those serving the blind eye. Layers 4A and 4B showed columns of reduced CO, in register with pale rows of patches in layer 2/3. Layers 4C, 5, and 6 also showed columns of CO activity, but remarkably, comparison with more superficial layers showed a reversal in contrast. In other words, pale CO staining in layers 2/3, 4A, and 4B was aligned with dark CO staining in layers 4C, 5, and 6. No experimental intervention or deprivation paradigm has been reported previously to produce opposite effects on metabolic activity in layers 2/3, 4A, and 4B vs. layers 4C, 5, and 6 within a given eye's columns. PMID:25810480

  17. Contrasting effects of strabismic amblyopia on metabolic activity in superficial and deep layers of striate cortex

    PubMed Central

    Adams, Daniel L.; Economides, John R.

    2015-01-01

    To probe the mechanism of visual suppression, we have raised macaques with strabismus by disinserting the medial rectus muscle in each eye at 1 mo of age. Typically, this operation produces a comitant, alternating exotropia with normal acuity in each eye. Here we describe an unusual occurrence: the development of severe amblyopia in one eye of a monkey after induction of exotropia. Shortly after surgery, the animal demonstrated a strong fixation preference for the left eye, with apparent suppression of the right eye. Later, behavioral testing showed inability to track or to saccade to targets with the right eye. With the left eye occluded, the animal demonstrated no visually guided behavior. Optokinetic nystagmus was absent in the right eye. Metabolic activity in striate cortex was assessed by processing the tissue for cytochrome oxidase (CO). Amblyopia caused loss of CO in one eye's rows of patches, presumably those serving the blind eye. Layers 4A and 4B showed columns of reduced CO, in register with pale rows of patches in layer 2/3. Layers 4C, 5, and 6 also showed columns of CO activity, but remarkably, comparison with more superficial layers showed a reversal in contrast. In other words, pale CO staining in layers 2/3, 4A, and 4B was aligned with dark CO staining in layers 4C, 5, and 6. No experimental intervention or deprivation paradigm has been reported previously to produce opposite effects on metabolic activity in layers 2/3, 4A, and 4B vs. layers 4C, 5, and 6 within a given eye's columns. PMID:25810480

  18. Active/Passive Control of Sound Radiation from Panels using Constrained Layer Damping

    NASA Technical Reports Server (NTRS)

    Gibbs, Gary P.; Cabell, Randolph H.

    2003-01-01

    A hybrid passive/active noise control system utilizing constrained layer damping and model predictive feedback control is presented. This system is used to control the sound radiation of panels due to broadband disturbances. To facilitate the hybrid system design, a methodology for placement of constrained layer damping which targets selected modes based on their relative radiated sound power is developed. The placement methodology is utilized to determine two constrained layer damping configurations for experimental evaluation of a hybrid system. The first configuration targets the (4,1) panel mode which is not controllable by the piezoelectric control actuator, and the (2,3) and (5,2) panel modes. The second configuration targets the (1,1) and (3,1) modes. The experimental results demonstrate the improved reduction of radiated sound power using the hybrid passive/active control system as compared to the active control system alone.

  19. Effect of layered composite meta-structures on the optical activity and ellipticity of structural biomolecules

    NASA Astrophysics Data System (ADS)

    Khoo, E. H.; Hor, Y. Li; Leong, Eunice S. P.; Liu, Y. J.

    2014-09-01

    In this paper, we design layered composite meta-structures to investigate its' effect on the optical activity and circular dichroism (CD). The layered composite meta-structures consist of thin gammadion nanostructure with thickness λ/10, where λ is the incident wavelength. The layered meta-structures are alternate between a dielectric and gold (AU) material. Each layered composite meta-gammadion is arranged together in an array of pitch 700 nm. In the first case, 3 layers of meta-gammadion, with metal-insulator-metal (MIM) and insulator-metal-insulator (IMI) configuration are simulated with material properties from optical hand book. There are 3 modes in the CD spectrum, which can be characterized into Bloch CD mode and hybrid CD modes. Compared with the CD spectrum of whole structure of gammadion in gold with same total height, the CD of the MIM layered composite are larger. When the number layer increase to 5, it is observed that the CD is reduced by 30% and there is a red shift in the Bloch CD mode and a slight blue shift in the hybrid CD modes. By further increasing the number of layers to 7, we observed further CD increment and larger wavelength shift in the CD modes. The layered composite meta-gammadion is fabricated using template stripping method. Experimental results also show excellent agreement with the simulation results for CD and wavelength shift. We submerge the layered meta-gammadion into a solution of chiral molecules. The CD spectrum of the meta-gammadion shows a larger wavelength shift compared to pure metal structures. This indicate a more sensitive and robust detection of chiral molecules.

  20. Activation Layer Stabilization of High Polarization Photocathodes in Sub-Optimal RF Gun Environments

    SciTech Connect

    Gregory A. Mulhollan

    2010-11-16

    Specific activation recipes for bulk, 100 nm thick MBE grown and high polarization III-V photocathode material have been developed which mitigate the effects of exposure to background gasses. Lifetime data using four representative gasses were acquired for bulk GaAs, 100 nm unstrained GaAs and strained superlattice GaAs/GaAsP, all activated both with Cs and then Cs and Li (bi-alkali). Each photoemitter showed marked resilience improvement when activated using the bi-alkali recipe compared to the standard single alkali recipe. A dual alkali activation system at SLAC was constructed, baked and commissioned with the purpose of performing spin-polarization measurements on electrons emitted from the bi-alkali activated surfaces. An end station at SSRL was configured with the required sources for energy resolved photoemission measurements on the bi-alkali activated and CO2 dosed surfaces. The bi-alkali recipes were successfully implemented at SLAC/SSRL. Measurements at SLAC of the photoelectron spin-polarization from the modified activation surface showed no sign of a change in value compared to the standard activated material, i.e., no ill effects. Analysis of photoemission data indicates that the addition of Li to the activation layer results in a multi-layer structure. The presence of Li in the activation layer also acts as an inhibitor to CO2 absorption, hence better lifetimes in worse vacuum were achieved. The bi-alkali activation has been tested on O2 activated GaAs for comparison with NF3 activated surfaces. Comparable resilience to CO2 exposure was achieved for the O2 activated surface. An RF PECVD amorphous silicon growth system was modified to allow high temperature heat cleaning of GaAs substrates prior to film deposition. Growth versus thickness data were collected. Very thin amorphous silicon germanium layers were optimized to exhibit good behavior as an electron emitter. Growth of the amorphous silicon germanium films on the above substrates was fine tuned

  1. Three-Dimensional Multiscale Modeling of Stable Intermediate State Formation Mechanism in a Single Active Layer- Phase Change Memory Cell

    NASA Astrophysics Data System (ADS)

    Dincer, Onur; Cinar, Ibrahim; Karakas, Vedat; Aslan, Ozgur Burak; Gokce, Aisha; Stipe, Barry; Katine, Jordan A.; Aktas, Gulen; Ozatay, Ozhan

    2014-03-01

    Phase change memory (PCM) appears as a potential memory technology with its superior scalability which could be enhanced by a boost in storage density via multiple-bit per cell functionality. Given the large contrast between set and reset states of a PCM cell it is yet unclear whether it is possible to create intermediate logic states reproducibly and controllably in a device with a single active phase change layer. Here we report the results of a 3D finite element model that pinpoints the direct effect of current distribution and the indirect effect of device top contact fabrication induced defects through modification of phase change kinetics (crystallite nucleation and growth rates) on stabilization of intermediate states. A comprehensive picture of the electrical, thermal and phase change dynamics is obtained using a multiphysics approach. Our study shows that homogeneous and heterogeneous phase transition can be induced in the active region such that nonuniform temperature distribution and modification of switching dynamics with various contact shapes and sizes play a major role in the stabilization of a mixed phase state. This work has been supported by the European Commission FP7 Marie Curie IRG grant: PCM-256281 and TUBITAK grant: 113F385.

  2. Active-layer thermal monitoring on the Fildes Peninsula, King George Island, maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, R. F. M.; Schaefer, C. E. G. R.; Simas, F. M. B.; Francelino, M. R.; Fernandes-Filho, E. I.; Lyra, G. B.; Bockheim, J. G.

    2014-12-01

    International attention to climate change phenomena has grown in the last decade; the active layer and permafrost are of great importance in understanding processes and future trends due to their role in energy flux regulation. The objective of this paper is to present active-layer temperature data for one Circumpolar Active Layer Monitoring South hemisphere (CALM-S) site located on the Fildes Peninsula, King George Island, maritime Antarctica over an 57-month period (2008-2012). The monitoring site was installed during the summer of 2008 and consists of thermistors (accuracy of ±0.2 °C), arranged vertically with probes at different depths, recording data at hourly intervals in a high-capacity data logger. A series of statistical analyses was performed to describe the soil temperature time series, including a linear fit in order to identify global trends, and a series of autoregressive integrated moving average (ARIMA) models was tested in order to define the best fit for the data. The affects of weather on the thermal regime of the active layer have been identified, providing insights into the influence of climate change on permafrost. The active-layer thermal regime in the studied period was typical of periglacial environments, with extreme variation in surface during the summer resulting in frequent freeze and thaw cycles. The active-layer thickness (ALT) over the studied period shows a degree of variability related to different annual weather conditions, reaching a maximum of 117.5 cm in 2009. The ARIMA model could describe the data adequately and is an important tool for more conclusive analysis and predictions when longer data sets are available. Despite the variability when comparing temperature readings and ACT over the studied period, no trend can be identified.

  3. Active layer thermal monitoring at Fildes Peninsula, King George Island, Maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, R. F. M.; Schaefer, C. E. G. R.; Simas, F. N. B.; Francelino M., R.; Fernandes-Filho, E. I.; Lyra, G. B.; Bockheim, J. G.

    2014-07-01

    International attention to the climate change phenomena has grown in the last decade; the active layer and permafrost are of great importance in understanding processes and future trends due to their role in energy flux regulation. The objective of the this paper is to present active layer temperature data for one CALM-S site located at Fildes Peninsula, King George Island, Maritime Antarctica over an fifth seven month period (2008-2012). The monitoring site was installed during the summer of 2008 and consists of thermistors (accuracy of ± 0.2 °C), arranged vertically with probes at different depths, recording data at hourly intervals in a~high capacity data logger. A series of statistical analysis were performed to describe the soil temperature time series, including a linear fit in order to identify global trend and a series of autoregressive integrated moving average (ARIMA) models were tested in order to define the best fit for the data. The controls of weather on the thermal regime of the active layer have been identified, providing insights about the influence of climate chance over the permafrost. The active layer thermal regime in the studied period was typical of periglacial environment, with extreme variation at the surface during summer resulting in frequent freeze and thaw cycles. The active layer thickness (ALT) over the studied period showed variability related to different annual weather conditions, reaching a maximum of 117.5 cm in 2009. The ARIMA model was considered appropriate to treat the dataset, enabling more conclusive analysis and predictions when longer data sets are available. Despite the variability when comparing temperature readings and active layer thickness over the studied period, no warming trend was detected.

  4. Thermal conductivity tensors of the cladding and active layers of interband cascade lasers

    NASA Astrophysics Data System (ADS)

    Zhou, Chuanle; Cui, Boya; Vurgaftman, I.; Canedy, C. L.; Kim, C. S.; Kim, M.; Bewley, W. W.; Merritt, C. D.; Abell, J.; Meyer, J. R.; Grayson, M.

    2014-12-01

    The cross-plane and in-plane thermal conductivities of the W-active stages and InAs/AlSb superlattice optical cladding layer of an interband cascade laser (ICL) were characterized for temperatures ranging from 15 K to 324 K. The in-plane thermal conductivity of the active layer is somewhat larger than the cross-plane value at temperatures above about 30 K, while the thermal conductivity tensor becomes nearly isotropic at the lowest temperatures studied. These results will improve ICL performance simulations and guide the optimization of thermal management.

  5. MAPLE prepared heterostructures with arylene based polymer active layer for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Stanculescu, F.; Rasoga, O.; Catargiu, A. M.; Vacareanu, L.; Socol, M.; Breazu, C.; Preda, N.; Socol, G.; Stanculescu, A.

    2015-05-01

    This paper presents some studies about the preparation by matrix-assisted pulsed laser evaporation (MAPLE) technique of heterostructures with single layer of arylene based polymer, poly[N-(2-ethylhexyl)2.7-carbazolyl vinylene]/AMC16 and poly[N-(2-ethylhexyl)2.7-carbazolyl 1.4-phenylene ethynylene]/AMC22, and with layers of these polymers mixed with Buckminsterfullerene/C60 in the weight ratio of 1:2 (AMC16:C60) and 1:3 (AMC22:C60). The deposited layers have been characterized by spectroscopic (UV-Vis-NIR, PL, FTIR) and microscopic (SEM, AFM) methods. The effect of the polymer particularities on the optical and electrical properties of the structures based on polymer and polymer:C60 mixed layer has been analyzed. The study of the electrical properties has revealed typical solar cell behavior for the heterostructure prepared by MAPLE on glass/ITO/PEDOT-PSS with AMC16, AMC22 and AMC22:C60 layer, confirming that this method is adequate for the preparation of polymeric and mixed active layers for solar cells applications. The highest photovoltaic effect was shown by the solar cell structure realized with single layer of AMC16 polymer: glass/ITO/PEDOT-PSS/AMC16/Al.

  6. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer.

    PubMed

    Ciobanu, C S; Groza, A; Iconaru, S L; Popa, C L; Chapon, P; Chifiriuc, M C; Hristu, R; Stanciu, G A; Negrila, C C; Ghita, R V; Ganciu, M; Predoi, D

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC-American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  7. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer

    PubMed Central

    Ciobanu, C. S.; Groza, A.; Iconaru, S. L.; Popa, C. L.; Chapon, P.; Chifiriuc, M. C.; Hristu, R.; Stanciu, G. A.; Negrila, C. C.; Ghita, R. V.; Ganciu, M.; Predoi, D.

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC—American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  8. 75 FR 69447 - Agency Information Collection Activities; Proposed Collection; Comment Request; Medical Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-12

    ... Collection; Comment Request; Medical Devices; Device Tracking AGENCY: Food and Drug Administration, HHS... device information is collected to facilitate identifying the current location of medical devices and... solicits comments on information collection requirements for the tracking of medical devices. DATES:...

  9. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Xu, Jianhua; Yang, Yajie; Yu, Junsheng; Jiang, Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  10. Use of an Activity Monitor and GPS Device to Assess Community Activity and Participation in Transtibial Amputees

    PubMed Central

    Hordacre, Brenton; Barr, Christopher; Crotty, Maria

    2014-01-01

    This study characterized measures of community activity and participation of transtibial amputees based on combined data from separate accelerometer and GPS devices. The relationship between community activity and participation and standard clinical measures was assessed. Forty-seven participants were recruited (78% male, mean age 60.5 years). Participants wore the accelerometer and GPS devices for seven consecutive days. Data were linked to assess community activity (community based step counts) and community participation (number of community visits). Community activity and participation were compared across amputee K-level groups. Forty-six participants completed the study. On average each participant completed 16,645 (standard deviation (SD) 13,274) community steps and 16 (SD 10.9) community visits over seven days. There were differences between K-level groups for measures of community activity (F(2,45) = 9.4, p < 0.001) and participation (F(2,45) = 6.9, p = 0.002) with lower functioning K1/2 amputees demonstrating lower levels of community activity and participation than K3 and K4 amputees. There was no significant difference between K3 and K4 for community activity (p = 0.28) or participation (p = 0.43). This study demonstrated methodology to link accelerometer and GPS data to assess community activity and participation in a group of transtibial amputees. Differences in K-levels do not appear to accurately reflect actual community activity or participation in higher functioning transtibial amputees. PMID:24670721

  11. A passive-flow microfluidic device for imaging latent HIV activation dynamics in single T cells

    PubMed Central

    Gearhart, Larisa M.; Miller-Jensen, Kathryn

    2015-01-01

    Quantifying cell-to-cell variability in drug response dynamics is important when evaluating therapeutic efficacy. For example, optimizing latency reversing agents (LRAs) for use in a clinical “activate-and-kill” strategy to purge the latent HIV reservoir in patients requires minimizing heterogeneous viral activation dynamics. To evaluate how heterogeneity in latent HIV activation varies across a range of LRAs, we tracked drug-induced response dynamics in single cells via live-cell imaging using a latent HIV–GFP reporter virus in a clonal Jurkat T cell line. To enable these studies in suspension cells, we designed a simple method to capture an array of single Jurkat T cells using a passive-flow microfluidic device. Our device, which does not require external pumps or tubing, can trap hundreds of cells within minutes with a high retention rate over 12 hours of imaging. Using this device, we quantified heterogeneity in viral activation stimulated by transcription factor (TF) activators and histone deacetylase (HDAC) inhibitors. Generally, TF activators resulted in both faster onset of viral activation and faster rates of production, while HDAC inhibitors resulted in more uniform onset times, but more heterogeneous rates of production. Finally, we demonstrated that while onset time of viral gene expression and rate of viral production together predict total HIV activation, rate and onset time were not correlated within the same individual cell, suggesting that these features are regulated independently. Overall, our results reveal drug-specific patterns of noisy HIV activation dynamics not previously identified in static single-cell assays, which may require consideration for the most effective activate-and-kill regime. PMID:26138068

  12. Microbial Activity in Active and Upper Permafrost Layers in Axel Heiberg Island

    NASA Astrophysics Data System (ADS)

    Vishnivetskaya, T. A.; Allan, J.; Cheng, K.; Chourey, K.; Hettich, R. L.; Layton, A.; Liu, X.; Murphy, J.; Mykytczuk, N. C.; Phelps, T. J.; Pfiffner, S. M.; Saarunya, G.; Stackhouse, B. T.; Whyte, L.; Onstott, T. C.

    2011-12-01

    Data on microbial communities and their metabolic activity in Arctic wetlands and underlying permafrost sediments is lacking. Samples were collected from different depths of a cryosol (D1, D2) and upper permafrost (D3) at the Axel Heiberg Island in July 2009. Upper cryosol has lower H2O but higher C and N content when compared to deeper horizons including upper permafrost layer. Deep cryosol and upper permafrost contained SO42- (155 and 132 ppm) and NO3- (0.12 and 0.10 ppm), respectively. The phylogenetic analyses of the environmental 16S rRNA genes showed the putative SRB were more abundant in permafrost (8%) than in cryosols, D1 (0.2%) and D2 (1.1%). Putative denitrifying bacteria varied along depth with near 0.1% in D1 and a significant increase in D2 (2.7%) and D3 (2.2%). Methanogens were not detected; methanotrophs were present at low levels in D3 (1%). Two sets of microcosms were set up. Firstly, anaerobic microcosms, amended with 10 mM glucose, sulfate or nitrate, were cultivated at varying temperatures (15o, 6o, and 0o C) for 10 months. Metabolic activity was monitored by measuring CO2 and CH4 every 3 months. A total of 89.5% of the D3-originated microcosms showed higher activity in comparison to cryosols in first 3 months. CH4 was not detected in these microcosms, whereas CO2 production was higher at 15o C or with glucose. Metaproteomics analyses of microcosms with higher levels of CO2 production indicated the presence of stress responsive proteins (e.g. DnaK, GroEL) and proteins essential for energy production and survival under carbon starvation (e.g. F0F1 ATP synthase, acyl-CoA dehydrogenase). These proteins have been previously shown to be up-regulated at low temperatures by permafrost bacteria. Metaproteomics data based on the draft sequences indicated the presence of proteins from the genera Bradyrhizobium, Sphingomonas, Lysinibacillus and Methylophilaceae and these bacteria were also detected by pyrosequencing. Secondly, a duplicate set of anaerobic

  13. Development of a low activation concrete shielding wall by multi-layered structure for a fusion reactor

    NASA Astrophysics Data System (ADS)

    Sato, Satoshi; Maegawa, Toshio; Yoshimatsu, Kenji; Sato, Koichi; Nonaka, Akira; Takakura, Kosuke; Ochiai, Kentaro; Konno, Chikara

    2011-10-01

    A multi-layered concrete structure has been developed to reduce induced activity in the shielding for neutron generating facilities such as a fusion reactor. The multi-layered concrete structure is composed of: (1) an inner low activation concrete, (2) a boron-doped low activation concrete as the second layer, and (3) ordinary concrete as the outer layer of the neutron shield. With the multi-layered concrete structure the volume of boron is drastically decreased compared to a monolithic boron-doped concrete. A 14 MeV neutron shielding experiment with multi-layered concrete structure mockups was performed at FNS and several reaction rates and induced activity in the mockups were measured. This demonstrated that the multi-layered concrete effectively reduced low energy neutrons and induced activity.

  14. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations.

    PubMed

    Mao, Ling-Feng; Ning, H; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-01-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter. PMID:27103586

  15. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

    PubMed Central

    Mao, Ling-Feng; Ning, H.; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-01-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter. PMID:27103586

  16. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

    NASA Astrophysics Data System (ADS)

    Mao, Ling-Feng; Ning, H.; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-04-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter.

  17. A Novel Wearable Device for Food Intake and Physical Activity Recognition

    PubMed Central

    Farooq, Muhammad; Sazonov, Edward

    2016-01-01

    Presence of speech and motion artifacts has been shown to impact the performance of wearable sensor systems used for automatic detection of food intake. This work presents a novel wearable device which can detect food intake even when the user is physically active and/or talking. The device consists of a piezoelectric strain sensor placed on the temporalis muscle, an accelerometer, and a data acquisition module connected to the temple of eyeglasses. Data from 10 participants was collected while they performed activities including quiet sitting, talking, eating while sitting, eating while walking, and walking. Piezoelectric strain sensor and accelerometer signals were divided into non-overlapping epochs of 3 s; four features were computed for each signal. To differentiate between eating and not eating, as well as between sedentary postures and physical activity, two multiclass classification approaches are presented. The first approach used a single classifier with sensor fusion and the second approach used two-stage classification. The best results were achieved when two separate linear support vector machine (SVM) classifiers were trained for food intake and activity detection, and their results were combined using a decision tree (two-stage classification) to determine the final class. This approach resulted in an average F1-score of 99.85% and area under the curve (AUC) of 0.99 for multiclass classification. With its ability to differentiate between food intake and activity level, this device may potentially be used for tracking both energy intake and energy expenditure. PMID:27409622

  18. A Novel Wearable Device for Food Intake and Physical Activity Recognition.

    PubMed

    Farooq, Muhammad; Sazonov, Edward

    2016-01-01

    Presence of speech and motion artifacts has been shown to impact the performance of wearable sensor systems used for automatic detection of food intake. This work presents a novel wearable device which can detect food intake even when the user is physically active and/or talking. The device consists of a piezoelectric strain sensor placed on the temporalis muscle, an accelerometer, and a data acquisition module connected to the temple of eyeglasses. Data from 10 participants was collected while they performed activities including quiet sitting, talking, eating while sitting, eating while walking, and walking. Piezoelectric strain sensor and accelerometer signals were divided into non-overlapping epochs of 3 s; four features were computed for each signal. To differentiate between eating and not eating, as well as between sedentary postures and physical activity, two multiclass classification approaches are presented. The first approach used a single classifier with sensor fusion and the second approach used two-stage classification. The best results were achieved when two separate linear support vector machine (SVM) classifiers were trained for food intake and activity detection, and their results were combined using a decision tree (two-stage classification) to determine the final class. This approach resulted in an average F1-score of 99.85% and area under the curve (AUC) of 0.99 for multiclass classification. With its ability to differentiate between food intake and activity level, this device may potentially be used for tracking both energy intake and energy expenditure. PMID:27409622

  19. Devices for Self-Monitoring Sedentary Time or Physical Activity: A Scoping Review

    PubMed Central

    Loveday, Adam; Pearson, Natalie; Edwardson, Charlotte; Yates, Thomas; Biddle, Stuart JH; Esliger, Dale W

    2016-01-01

    Background It is well documented that meeting the guideline levels (150 minutes per week) of moderate-to-vigorous physical activity (PA) is protective against chronic disease. Conversely, emerging evidence indicates the deleterious effects of prolonged sitting. Therefore, there is a need to change both behaviors. Self-monitoring of behavior is one of the most robust behavior-change techniques available. The growing number of technologies in the consumer electronics sector provides a unique opportunity for individuals to self-monitor their behavior. Objective The aim of this study is to review the characteristics and measurement properties of currently available self-monitoring devices for sedentary time and/or PA. Methods To identify technologies, four scientific databases were systematically searched using key terms related to behavior, measurement, and population. Articles published through October 2015 were identified. To identify technologies from the consumer electronic sector, systematic searches of three Internet search engines were also performed through to October 1, 2015. Results The initial database searches identified 46 devices and the Internet search engines identified 100 devices yielding a total of 146 technologies. Of these, 64 were further removed because they were currently unavailable for purchase or there was no evidence that they were designed for, had been used in, or could readily be modified for self-monitoring purposes. The remaining 82 technologies were included in this review (73 devices self-monitored PA, 9 devices self-monitored sedentary time). Of the 82 devices included, this review identified no published articles in which these devices were used for the purpose of self-monitoring PA and/or sedentary behavior; however, a number of technologies were found via Internet searches that matched the criteria for self-monitoring and provided immediate feedback on PA (ActiGraph Link, Microsoft Band, and Garmin Vivofit) and sedentary time

  20. [A fully-implantable active hearing device in congenital auricular atresia].

    PubMed

    Siegert, R; Neumann, C

    2014-07-01

    Active implantable hearing devices were primarily developed for sensorineural hearing loss. The vibrator coupling mechanisms were oriented towards normal middle ear anatomy and function. The aim of this project was to modify the only fully implantable hearing device with an implantable microphone for application in congenital auricular atresia, Carina™, and to introduce the modified device into the clinic. A special prosthesis was developed for the transducer and its individual coupling achieved by a special cramping system. The system was implanted in 5 patients with congenital auricular atresia. Audiological results were good; with patients' hearing gain exceeding 30 dB HL. Anatomic limits to the system's indications and technical drawbacks are also discussed. PMID:25056646

  1. Classification of team sport activities using a single wearable tracking device.

    PubMed

    Wundersitz, Daniel W T; Josman, Casey; Gupta, Ritu; Netto, Kevin J; Gastin, Paul B; Robertson, Sam

    2015-11-26

    Wearable tracking devices incorporating accelerometers and gyroscopes are increasingly being used for activity analysis in sports. However, minimal research exists relating to their ability to classify common activities. The purpose of this study was to determine whether data obtained from a single wearable tracking device can be used to classify team sport-related activities. Seventy-six non-elite sporting participants were tested during a simulated team sport circuit (involving stationary, walking, jogging, running, changing direction, counter-movement jumping, jumping for distance and tackling activities) in a laboratory setting. A MinimaxX S4 wearable tracking device was worn below the neck, in-line and dorsal to the first to fifth thoracic vertebrae of the spine, with tri-axial accelerometer and gyroscope data collected at 100Hz. Multiple time domain, frequency domain and custom features were extracted from each sensor using 0.5, 1.0, and 1.5s movement capture durations. Features were further screened using a combination of ANOVA and Lasso methods. Relevant features were used to classify the eight activities performed using the Random Forest (RF), Support Vector Machine (SVM) and Logistic Model Tree (LMT) algorithms. The LMT (79-92% classification accuracy) outperformed RF (32-43%) and SVM algorithms (27-40%), obtaining strongest performance using the full model (accelerometer and gyroscope inputs). Processing time can be reduced through feature selection methods (range 1.5-30.2%), however a trade-off exists between classification accuracy and processing time. Movement capture duration also had little impact on classification accuracy or processing time. In sporting scenarios where wearable tracking devices are employed, it is both possible and feasible to accurately classify team sport-related activities. PMID:26472301

  2. Activity induces traveling waves, vortices and spatiotemporal chaos in a model actomyosin layer

    NASA Astrophysics Data System (ADS)

    Ramaswamy, Rajesh; Jülicher, Frank

    2016-02-01

    Inspired by the actomyosin cortex in biological cells, we investigate the spatiotemporal dynamics of a model describing a contractile active polar fluid sandwiched between two external media. The external media impose frictional forces at the interface with the active fluid. The fluid is driven by a spatially-homogeneous activity measuring the strength of the active stress that is generated by processes consuming a chemical fuel. We observe that as the activity is increased over two orders of magnitude the active polar fluid first shows spontaneous flow transition followed by transition to oscillatory dynamics with traveling waves and traveling vortices in the flow field. In the flow-tumbling regime, the active polar fluid also shows transition to spatiotemporal chaos at sufficiently large activities. These results demonstrate that level of activity alone can be used to tune the operating point of actomyosin layers with qualitatively different spatiotemporal dynamics.

  3. Activity induces traveling waves, vortices and spatiotemporal chaos in a model actomyosin layer

    PubMed Central

    Ramaswamy, Rajesh; Jülicher, Frank

    2016-01-01

    Inspired by the actomyosin cortex in biological cells, we investigate the spatiotemporal dynamics of a model describing a contractile active polar fluid sandwiched between two external media. The external media impose frictional forces at the interface with the active fluid. The fluid is driven by a spatially-homogeneous activity measuring the strength of the active stress that is generated by processes consuming a chemical fuel. We observe that as the activity is increased over two orders of magnitude the active polar fluid first shows spontaneous flow transition followed by transition to oscillatory dynamics with traveling waves and traveling vortices in the flow field. In the flow-tumbling regime, the active polar fluid also shows transition to spatiotemporal chaos at sufficiently large activities. These results demonstrate that level of activity alone can be used to tune the operating point of actomyosin layers with qualitatively different spatiotemporal dynamics. PMID:26877263

  4. Photocatalytic activity of layered perovskite-like oxides in practically valuable chemical reactions

    NASA Astrophysics Data System (ADS)

    Rodionov, I. A.; Zvereva, I. A.

    2016-03-01

    The photocatalytic properties of layered perovskite-like oxides corresponding to the Ruddlesen–Popper, Dion–Jacobson and Aurivillius phases are considered. Of the photocatalytic reactions, the focus is on the reactions of water splitting, hydrogen evolution from aqueous solutions of organic substances and degradation of model organic pollutants. Possibilities to conduct these reactions under UV and visible light in the presence of layered perovskite-like oxides and composite photocatalysts based on them are shown. The specific surface area, band gap energy, particle morphology, cation and anion doping and surface modification are considered as factors that affect the photocatalytic activity. Special attention is paid to the possibilities to enhance the photocatalytic activity by intercalation, ion exchange and exfoliation, which are inherent in this class of compounds. Conclusions are made about the prospects for the use of layered perovskite-like oxides in photocatalysis. The bibliography includes 253 references.

  5. Semi-active control of helicopter vibration using controllable stiffness and damping devices

    NASA Astrophysics Data System (ADS)

    Anusonti-Inthra, Phuriwat

    Semi-active concepts for helicopter vibration reduction are developed and evaluated in this dissertation. Semi-active devices, controllable stiffness devices or controllable orifice dampers, are introduced; (i) in the blade root region (rotor-based concept) and (ii) between the rotor and the fuselage as semi-active isolators (in the non-rotating frame). Corresponding semi-active controllers for helicopter vibration reduction are also developed. The effectiveness of the rotor-based semi-active vibration reduction concept (using stiffness and damping variation) is demonstrated for a 4-bladed hingeless rotor helicopter in moderate- to high-speed forward flight. A sensitivity study shows that the stiffness variation of root element can reduce hub vibrations when proper amplitude and phase are used. Furthermore, the optimal semi-active control scheme can determine the combination of stiffness variations that produce significant vibration reduction in all components of vibratory hub loads simultaneously. It is demonstrated that desired cyclic variations in properties of the blade root region can be practically achieved using discrete controllable stiffness devices and controllable dampers, especially in the flap and lag directions. These discrete controllable devices can produce 35--50% reduction in a composite vibration index representing all components of vibratory hub loads. No detrimental increases are observed in the lower harmonics of blade loads and blade response (which contribute to the dynamic stresses) and controllable device internal loads, when the optimal stiffness and damping variations are introduced. The effectiveness of optimal stiffness and damping variations in reducing hub vibration is retained over a range of cruise speeds and for variations in fundamental rotor properties. The effectiveness of the semi-active isolator is demonstrated for a simplified single degree of freedom system representing the semi-active isolation system. The rotor

  6. Monitoring of the active layer at Kapp Linne', SVALBARD 1972-2002

    NASA Astrophysics Data System (ADS)

    Akerman, J.

    2003-04-01

    The active layer has been monitored at ten sites in the vicinity of Kapp Linné, (78o03'42" 13o37'07") Svalbard during the period 1972 - 2002. The ten sites differ in elevation, distance from the sea, vegetation cover, substrate and active periglacial processes. From 1994 the International permafrost Association "CALM" standard grids, with measurement within 100x100m squares, has been applied. Microclimate and soil temperatures have been monitored by data logger covering levels form 2 m above to 7m below the ground. The macroclimate is covered by complete data series from the nearby weather station at Kapp Linne’, covering the period 1912 to 2002. A number of periglacial processes, especially slope processes, are monitored parallel with the active layer. The mean active layer for the sites varies between 1,13m and 0,43m. The deepest active layer is found in the exposed, well drained raised beach ridges and the shallowest in the bogs. The interannual variability during the observation period do not correlate well with the MAAT but better with the summer climate, June - August mean or DDT. The data clearly illustrate colder summers during the period 1972 to 1983 and after that steadily increasing summer temperatures. The active layer follows the same general pattern with good correlations. There are several surface indications as a response to the deepening active layer especially in the bogs. Thermokarst scars appear frequently and a majority of the palsa like mounds and pounus have disappeared. A drastic change in the vegetation on the bogs has also occurred, from dry heath to wet Carex vegetation. In summary the observations from Kapp Linne’ are; 1. A clear trend towards milder summers, 2. A clear trend towards deeper active layers, 3. All sites show a similar pattern, 4. The bogs are getting strikingly wetter, 5. Mounds in the bog sites are disappearing, 6. The slow slope processes are getting accelerated, 7. Thermokarst depressions and scars are appearing in

  7. Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nguyen, H. Q.; Yu, H. W.; Luc, Q. H.; Tang, Y. Z.; Phan, V. T. H.; Hsu, C. H.; Chang, E. Y.; Tseng, Y. C.

    2014-12-01

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique’s precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (˜106 cm-2), while keeping each individual SG layer slightly exceeding the critical thickness (˜80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 1012 eV-1 cm-2 in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  8. Methods, microfluidic devices, and systems for detection of an active enzymatic agent

    SciTech Connect

    Sommer, Gregory J; Hatch, Anson V; Singh, Anup K; Wang, Ying-Chih

    2014-10-28

    Embodiments of the present invention provide methods, microfluidic devices, and systems for the detection of an active target agent in a fluid sample. A substrate molecule is used that contains a sequence which may cleave in the presence of an active target agent. A SNAP25 sequence is described, for example, that may be cleaved in the presence of Botulinum Neurotoxin. The substrate molecule includes a reporter moiety. The substrate molecule is exposed to the sample, and resulting reaction products separated using electrophoretic separation. The elution time of the reporter moiety may be utilized to identify the presence or absence of the active target agent.

  9. Intercalation and controlled release of pharmaceutically active compounds from a layered double hydroxide.

    PubMed

    Khan, A I; Lei, L; Norquist, A J; O'Hare, D

    2001-11-21

    A series of pharmaceutically active compounds including diclofenac, gemfibrozil, ibuprofen, naproxen, 2-propylpentanoic acid, 4-biphenylacetic acid and tolfenamic acid can be reversibly intercalated into a layered double hydroxide, initial studies suggest that these materials may have application as the basis of a novel tuneable drug delivery system. PMID:12240066

  10. Extending the Diffuse Layer Model of Surface Acidity Behavior: III. Estimating Bound Site Activity Coefficients

    EPA Science Inventory

    Although detailed thermodynamic analyses of the 2-pK diffuse layer surface complexation model generally specify bound site activity coefficients for the purpose of accounting for those non-ideal excess free energies contributing to bound site electrochemical potentials, in applic...

  11. Active Layer and Moisture Measurements for Intensive Site 0 and 1, Barrow, Alaska

    DOE Data Explorer

    John Peterson

    2015-04-17

    These are measurements of Active Layer Thickness collected along several lines beginning in September, 2011 to the present. The data were collected at several time periods along the Site0 L2 Line, the Site1 AB Line, and an ERT Monitoring Line near Area A in Site1.

  12. Protein assembly onto patterned microfabricated devices through enzymatic activation of fusion pro-tag.

    PubMed

    Lewandowski, Angela T; Yi, Hyunmin; Luo, Xiaolong; Payne, Gregory F; Ghodssi, Reza; Rubloff, Gary W; Bentley, William E

    2008-02-15

    We report a versatile approach for covalent surface-assembly of proteins onto selected electrode patterns of pre-fabricated devices. Our approach is based on electro-assembly of the aminopolysaccharide chitosan scaffold as a stable thin film onto patterned conductive surfaces of the device, which is followed by covalent assembly of the target protein onto the scaffold surface upon enzymatic activation of the protein's "pro-tag." For our demonstration, the model target protein is green fluorescent protein (GFP) genetically fused with a pentatyrosine pro-tag at its C-terminus, which assembles onto both two-dimensional chips and within fully packaged microfluidic devices in situ and under flow. Our surface-assembly approach enables spatial selectivity and orientational control under mild experimental conditions. We believe that our integrated approach harnessing genetic manipulation, in situ enzymatic activation, and electro-assembly makes it advantageous for a wide variety of bioMEMS and biosensing applications that require facile "biofunctionalization" of microfabricated devices. PMID:17625789

  13. A Novel Surface Structure Consisting of Contact-active Antibacterial Upper-layer and Antifouling Sub-layer Derived from Gemini Quaternary Ammonium Salt Polyurethanes.

    PubMed

    He, Wei; Zhang, Yi; Li, Jiehua; Gao, Yunlong; Luo, Feng; Tan, Hong; Wang, Kunjie; Fu, Qiang

    2016-01-01

    Contact-active antibacterial surfaces play a vital role in preventing bacterial contamination of artificial surfaces. In the past, numerous researches have been focused on antibacterial surfaces comprising of antifouling upper-layer and antibacterial sub-layer. In this work, we demonstrate a reversed surface structure which integrate antibacterial upper-layer and antifouling sub-layer. These surfaces are prepared by simply casting gemini quaternary ammonium salt waterborne polyurethanes (GWPU) and their blends. Due to the high interfacial energy of gemini quaternary ammonium salt (GQAS), chain segments containing GQAS can accumulate at polymer/air interface to form an antibacterial upper-layer spontaneously during the film formation. Meanwhile, the soft segments composed of polyethylene glycol (PEG) formed the antifouling sub-layer. Our findings indicate that the combination of antibacterial upper-layer and antifouling sub-layer endow these surfaces strong, long-lasting antifouling and contact-active antibacterial properties, with a more than 99.99% killing efficiency against both gram-positive and gram-negative bacteria attached to them. PMID:27561546

  14. A Novel Surface Structure Consisting of Contact-active Antibacterial Upper-layer and Antifouling Sub-layer Derived from Gemini Quaternary Ammonium Salt Polyurethanes

    PubMed Central

    He, Wei; Zhang, Yi; Li, Jiehua; Gao, Yunlong; Luo, Feng; Tan, Hong; Wang, Kunjie; Fu, Qiang

    2016-01-01

    Contact-active antibacterial surfaces play a vital role in preventing bacterial contamination of artificial surfaces. In the past, numerous researches have been focused on antibacterial surfaces comprising of antifouling upper-layer and antibacterial sub-layer. In this work, we demonstrate a reversed surface structure which integrate antibacterial upper-layer and antifouling sub-layer. These surfaces are prepared by simply casting gemini quaternary ammonium salt waterborne polyurethanes (GWPU) and their blends. Due to the high interfacial energy of gemini quaternary ammonium salt (GQAS), chain segments containing GQAS can accumulate at polymer/air interface to form an antibacterial upper-layer spontaneously during the film formation. Meanwhile, the soft segments composed of polyethylene glycol (PEG) formed the antifouling sub-layer. Our findings indicate that the combination of antibacterial upper-layer and antifouling sub-layer endow these surfaces strong, long-lasting antifouling and contact-active antibacterial properties, with a more than 99.99% killing efficiency against both gram-positive and gram-negative bacteria attached to them. PMID:27561546

  15. Quantum Efficiency and Bandgap Analysis for Combinatorial Photovoltaics: Sorting Activity of Cu–O Compounds in All-Oxide Device Libraries

    PubMed Central

    2014-01-01

    All-oxide-based photovoltaics (PVs) encompass the potential for extremely low cost solar cells, provided they can obtain an order of magnitude improvement in their power conversion efficiencies. To achieve this goal, we perform a combinatorial materials study of metal oxide based light absorbers, charge transporters, junctions between them, and PV devices. Here we report the development of a combinatorial internal quantum efficiency (IQE) method. IQE measures the efficiency associated with the charge separation and collection processes, and thus is a proxy for PV activity of materials once placed into devices, discarding optical properties that cause uncontrolled light harvesting. The IQE is supported by high-throughput techniques for bandgap fitting, composition analysis, and thickness mapping, which are also crucial parameters for the combinatorial investigation cycle of photovoltaics. As a model system we use a library of 169 solar cells with a varying thickness of sprayed titanium dioxide (TiO2) as the window layer, and covarying thickness and composition of binary compounds of copper oxides (Cu–O) as the light absorber, fabricated by Pulsed Laser Deposition (PLD). The analysis on the combinatorial devices shows the correlation between compositions and bandgap, and their effect on PV activity within several device configurations. The analysis suggests that the presence of Cu4O3 plays a significant role in the PV activity of binary Cu–O compounds. PMID:24410367

  16. Quantum efficiency and bandgap analysis for combinatorial photovoltaics: sorting activity of Cu-O compounds in all-oxide device libraries.

    PubMed

    Anderson, Assaf Y; Bouhadana, Yaniv; Barad, Hannah-Noa; Kupfer, Benjamin; Rosh-Hodesh, Eli; Aviv, Hagit; Tischler, Yaakov R; Rühle, Sven; Zaban, Arie

    2014-02-10

    All-oxide-based photovoltaics (PVs) encompass the potential for extremely low cost solar cells, provided they can obtain an order of magnitude improvement in their power conversion efficiencies. To achieve this goal, we perform a combinatorial materials study of metal oxide based light absorbers, charge transporters, junctions between them, and PV devices. Here we report the development of a combinatorial internal quantum efficiency (IQE) method. IQE measures the efficiency associated with the charge separation and collection processes, and thus is a proxy for PV activity of materials once placed into devices, discarding optical properties that cause uncontrolled light harvesting. The IQE is supported by high-throughput techniques for bandgap fitting, composition analysis, and thickness mapping, which are also crucial parameters for the combinatorial investigation cycle of photovoltaics. As a model system we use a library of 169 solar cells with a varying thickness of sprayed titanium dioxide (TiO2) as the window layer, and covarying thickness and composition of binary compounds of copper oxides (Cu-O) as the light absorber, fabricated by Pulsed Laser Deposition (PLD). The analysis on the combinatorial devices shows the correlation between compositions and bandgap, and their effect on PV activity within several device configurations. The analysis suggests that the presence of Cu4O3 plays a significant role in the PV activity of binary Cu-O compounds. PMID:24410367

  17. Detection of high tritium activity on the central titanium electrode of a plasma focus device

    SciTech Connect

    Rout, R.K.; Spinivasan, M.; Shyam, A.; Chitra, V. )

    1991-03-01

    In this paper a 2-kJ Mather plasma focus device is used to deuterate the top end surface (or tip) of its central titanium electrode to investigate the occurrence of anomalous nuclear reactions in the context of the cold fusion phenomenon. The tip of the central titanium electrode is found to develop at least a few tens of microcuries of tritium after several plasma focus discharges. Neither the tritium impurity level in the deuterium gas used in the experiment nor the tritium branch of the d-d reactions that are known to occur in plasma focus devices can account for such activity in the electrode. Anomalous nuclear reactions in the deuterated titanium lattice appear to be the most probable source of this high activity.

  18. Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing.

    PubMed

    Dhoore, Sören; Uvin, Sarah; Van Thourhout, Dries; Morthier, Geert; Roelkens, Gunther

    2016-06-13

    We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing. The proposed coupling structures are expected to pave the way for transfer-printing-based heterogeneous integration of active III-V devices such as semiconductor optical amplifiers (SOAs), photodetectors, electro-absorption modulators (EAMs) and single wavelength lasers on silicon photonic integrated circuits. PMID:27410317

  19. An active drop counting device using condenser microphone for superheated emulsion detector

    SciTech Connect

    Das, Mala; Marick, C.; Kanjilal, D.; Saha, S.

    2008-11-15

    An active device for superheated emulsion detector is described. A capacitive diaphragm sensor or condenser microphone is used to convert the acoustic pulse of drop nucleation to electrical signal. An active peak detector is included in the circuit to avoid multiple triggering of the counter. The counts are finally recorded by a microprocessor based data acquisition system. Genuine triggers, missed by the sensor, were studied using a simulated clock pulse. The neutron energy spectrum of {sup 252}Cf fission neutron source was measured using the device with R114 as the sensitive liquid and compared with the calculated fission neutron energy spectrum of {sup 252}Cf. Frequency analysis of the detected signals was also carried out.

  20. Thermal regime of active layer at two lithologically contrasting sites on James Ross Island, Antarctic Peninsula.

    NASA Astrophysics Data System (ADS)

    Hrbáček, Filip; Nývlt, Daniel; Láska, Kamil

    2016-04-01

    Antarctic Peninsula region (AP) represents one of the most rapidly warming parts of our planet in the last 50 years. Despite increasing research activities along both western and eastern sides of AP in last decades, there is still a lot of gaps in our knowledge relating to permafrost, active layer and its thermal and physical properties. This study brings new results of active layer monitoring on James Ross Island, which is the largest island in northern AP. Its northern part, Ulu Peninsula, is the largest ice-free area (more than 200 km2) in the region. Due its large area, we focused this study on sites located in different lithologies, which would affect local thermal regime of active layer. Study site (1) at Abernethy Flats area (41 m a.s.l.) lies ~7 km from northern coast. Lithologically is formed by disintegrated Cretaceous calcareous sandstones and siltstones of the Santa Marta Formation. Study site (2) is located at the northern slopes of Berry Hill (56 m a.s.l.), about 0.4 km from northern coastline. Lithology is composed of muddy to intermediate diamictites, tuffaceous siltstones to fine grained sandstones of the Mendel Formation. Data of air temperature at 2 meters above ground and the active layer temperatures at 75 cm deep profiles were obtained from both sites in period 1 January 2012 to 31 December 2014. Small differences were found when comparing mean air temperatures and active temperatures at 5 and 75 cm depth in the period 2012-2014. While the mean air temperatures varied between -7.7 °C and -7.0 °C, the mean ground temperatures fluctuated between -6.6 °C and -6.1 °C at 5 cm and -6.9 °C and -6.0 °C at 75 cm at Abernethy Flats and Berry Hill slopes respectively. Even though ground temperature differences along the profiles weren't pronounced during thawing seasons, the maximum active layer thickness was significantly larger at Berry Hill slopes (80 to 82 cm) than at Abernethy Flats (52 to 64 cm). We assume this differences are affected by