Science.gov

Sample records for active device layers

  1. Boundary Layer Relaminarization Device

    NASA Technical Reports Server (NTRS)

    Creel, Theodore R. (Inventor)

    1993-01-01

    Relamination of a boundary layer formed in supersonic flow over the leading edge of a swept airfoil is accomplished using at least one band, especially a quadrangular band, and most preferably a square band. Each band conforms to the leading edge and the upper and lower surfaces of the airfoil as an integral part thereof and extends perpendicularly from the leading edge. Each band has a height of about two times the thickness of the maximum expected boundary layer.

  2. Strained layer Fabry-Perot device

    DOEpatents

    Brennan, Thomas M.; Fritz, Ian J.; Hammons, Burrell E.

    1994-01-01

    An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.

  3. Processes for multi-layer devices utilizing layer transfer

    DOEpatents

    Nielson, Gregory N; Sanchez, Carlos Anthony; Tauke-Pedretti, Anna; Kim, Bongsang; Cederberg, Jeffrey; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

    2015-02-03

    A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

  4. Effect of Copolymer Chain Architecture on Active Layer Morphology and Device Performance

    NASA Astrophysics Data System (ADS)

    Amonoo, Jojo; Li, Anton; Sykes, Matthew; Huang, Bingyuan; Palermo, Edmund; McNeil, Anne; Shtein, Max; Green, Peter

    2014-03-01

    The optimum morphological structure that determines the device performance of bulk heterojunction thin film polymer solar cells is greatly influenced by the extent of phase separation between the polymer and fullerene components, which ultimately defines the length scales and purity of the donor- and acceptor-rich phases. Block copolymer thin films have been widely studied for their ability to microphase separate into well-defined nanostructures. Nickel-catalyzed chain-growth copolymerizations of thiophene and selenophene derivatives afforded well-defined π-conjugated copolymers of poly(3-hexylthiophene) (P3HT) and poly(3-hexylselenophene) (P3HS) to achieve diblock, random and gradient copolymer chain architectures. This allowed us to study the effect of copolymer sequence and nanoscale morphology of P3HT-P3HS copolymer/[6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) on device performance. With the use of energy-filtered transmission electron microscopy and conductive and photoconductive atomic force microscopy we found that copolymer sequence strongly influences the phase separation capabilities of the copolymer-fullerene blend in bulk heterojunction organic photovoltaic devices.

  5. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu; Li, Wenguang; Jiang, Hua

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  6. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

    PubMed

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

  7. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    NASA Astrophysics Data System (ADS)

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-02-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound - morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) - are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm-2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.

  8. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices

    PubMed Central

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M.; Calzada, M. Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  9. Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microeletronic [corrected] devices.

    PubMed

    Bretos, Iñigo; Jiménez, Ricardo; Tomczyk, Monika; Rodríguez-Castellón, Enrique; Vilarinho, Paula M; Calzada, M Lourdes

    2016-01-01

    Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound--morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT)--are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm(-2) is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics. PMID:26837240

  10. Engineering long shelf life multi-layer biologically active surfaces on microfluidic devices for point of care applications.

    PubMed

    Asghar, Waseem; Yuksekkaya, Mehmet; Shafiee, Hadi; Zhang, Michael; Ozen, Mehmet O; Inci, Fatih; Kocakulak, Mustafa; Demirci, Utkan

    2016-01-01

    Although materials and engineered surfaces are broadly utilized in creating assays and devices with wide applications in diagnostics, preservation of these immuno-functionalized surfaces on microfluidic devices remains a significant challenge to create reliable repeatable assays that would facilitate patient care in resource-constrained settings at the point-of-care (POC), where reliable electricity and refrigeration are lacking. To address this challenge, we present an innovative approach to stabilize surfaces on-chip with multiple layers of immunochemistry. The functionality of microfluidic devices using the presented method is evaluated at room temperature for up to 6-month shelf life. We integrated the preserved microfluidic devices with a lensless complementary metal oxide semiconductor (CMOS) imaging platform to count CD4(+) T cells from a drop of unprocessed whole blood targeting applications at the POC such as HIV management and monitoring. The developed immunochemistry stabilization method can potentially be applied broadly to other diagnostic immuno-assays such as viral load measurements, chemotherapy monitoring, and biomarker detection for cancer patients at the POC. PMID:26883474

  11. Engineering long shelf life multi-layer biologically active surfaces on microfluidic devices for point of care applications.

    PubMed

    Asghar, Waseem; Yuksekkaya, Mehmet; Shafiee, Hadi; Zhang, Michael; Ozen, Mehmet O; Inci, Fatih; Kocakulak, Mustafa; Demirci, Utkan

    2016-02-17

    Although materials and engineered surfaces are broadly utilized in creating assays and devices with wide applications in diagnostics, preservation of these immuno-functionalized surfaces on microfluidic devices remains a significant challenge to create reliable repeatable assays that would facilitate patient care in resource-constrained settings at the point-of-care (POC), where reliable electricity and refrigeration are lacking. To address this challenge, we present an innovative approach to stabilize surfaces on-chip with multiple layers of immunochemistry. The functionality of microfluidic devices using the presented method is evaluated at room temperature for up to 6-month shelf life. We integrated the preserved microfluidic devices with a lensless complementary metal oxide semiconductor (CMOS) imaging platform to count CD4(+) T cells from a drop of unprocessed whole blood targeting applications at the POC such as HIV management and monitoring. The developed immunochemistry stabilization method can potentially be applied broadly to other diagnostic immuno-assays such as viral load measurements, chemotherapy monitoring, and biomarker detection for cancer patients at the POC.

  12. Engineering long shelf life multi-layer biologically active surfaces on microfluidic devices for point of care applications

    PubMed Central

    Asghar, Waseem; Yuksekkaya, Mehmet; Shafiee, Hadi; Zhang, Michael; Ozen, Mehmet O.; Inci, Fatih; Kocakulak, Mustafa; Demirci, Utkan

    2016-01-01

    Although materials and engineered surfaces are broadly utilized in creating assays and devices with wide applications in diagnostics, preservation of these immuno-functionalized surfaces on microfluidic devices remains a significant challenge to create reliable repeatable assays that would facilitate patient care in resource-constrained settings at the point-of-care (POC), where reliable electricity and refrigeration are lacking. To address this challenge, we present an innovative approach to stabilize surfaces on-chip with multiple layers of immunochemistry. The functionality of microfluidic devices using the presented method is evaluated at room temperature for up to 6-month shelf life. We integrated the preserved microfluidic devices with a lensless complementary metal oxide semiconductor (CMOS) imaging platform to count CD4+ T cells from a drop of unprocessed whole blood targeting applications at the POC such as HIV management and monitoring. The developed immunochemistry stabilization method can potentially be applied broadly to other diagnostic immuno-assays such as viral load measurements, chemotherapy monitoring, and biomarker detection for cancer patients at the POC. PMID:26883474

  13. Multi-layer seal for electrochemical devices

    DOEpatents

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-11-16

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  14. Multi-layer seal for electrochemical devices

    DOEpatents

    Chou, Yeong-Shyung [Richland, WA; Meinhardt, Kerry D [Kennewick, WA; Stevenson, Jeffry W [Richland, WA

    2010-09-14

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  15. Influence of the active layer nanomorphology on device performance for ternary PbS x Se1-x quantum dots based solution-processed infrared photodetector

    NASA Astrophysics Data System (ADS)

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-01

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS x Se1-x quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS x Se1-x quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS x Se1-x QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = MP3HT:MQDs) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W-1 and 1.02 × 1010 Jones, respectively, at low V DS = -10 V and V G = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm-2. By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector.

  16. Influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dots based solution-processed infrared photodetector.

    PubMed

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-22

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS(x)Se(1-x) quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS(x)Se(1-x) QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = M(P3HT):M(QDs)) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W(-1) and 1.02 × 10(10) Jones, respectively, at low V(DS) = -10 V and V(G) = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm(-2). By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector. PMID:26963474

  17. Influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dots based solution-processed infrared photodetector.

    PubMed

    Song, Taojian; Cheng, Haijuan; Fu, Chunjie; He, Bo; Li, Weile; Xu, Junfeng; Tang, Yi; Yang, Shengyi; Zou, Bingsuo

    2016-04-22

    In this paper, the influence of the active layer nanomorphology on device performance for ternary PbS(x)Se(1-x) quantum dot-based solution-processed infrared photodetector is presented. Firstly, ternary PbS(x)Se(1-x) quantum dots (QDs) in various chemical composition were synthesized and the bandgap of the ternary PbS(x)Se(1-x) QDs can be controlled by the component ratio of S/(S + Se), and then field-effect transistor (FET) based photodetectors Au/PbS0.4Se0.6:P3HT/PMMA/Al, in which ternary PbS0.4Se0.6 QDs doped with poly(3-hexylthiophene) (P3HT) act as the active layer and poly(methyl methacrylate) (PMMA) as the dielectric layer, were presented. By changing the weight ratio of P3HT to PbS0.4Se0.6 QDs (K = M(P3HT):M(QDs)) in dichlorobenzene solution, we found that the device with K = 2:1 shows optimal electrical property in dark; however, the device with K = 1:2 demonstrated optimal performance under illumination, showing a maximum responsivity and specific detectivity of 55.98 mA W(-1) and 1.02 × 10(10) Jones, respectively, at low V(DS) = -10 V and V(G) = 3 V under 980 nm laser with an illumination intensity of 0.1 mW cm(-2). By measuring the atomic force microscopy phase images of PbS0.4Se0.6:P3HT films in different weight ratio K, our experimental data show that the active layer nanomorphology has a great influence on the device performance. Also, it provides an easy way to fabricate high performance solution-processed infrared photodetector.

  18. Active cleaning technique device

    NASA Technical Reports Server (NTRS)

    Shannon, R. L.; Gillette, R. B.

    1973-01-01

    The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

  19. Layer-by-layer assembly of vertically conducting graphene devices.

    PubMed

    Chen, Jing-Jing; Meng, Jie; Zhou, Yang-Bo; Wu, Han-Chun; Bie, Ya-Qing; Liao, Zhi-Min; Yu, Da-Peng

    2013-01-01

    Graphene has various potential applications owing to its unique electronic, optical, mechanical and chemical properties, which are primarily based on its two-dimensional nature. Graphene-based vertical devices can extend the investigations and potential applications range to three dimensions, while interfacial properties are crucial for the function and performance of such graphene vertical devices. Here we report a general method to construct graphene vertical devices with controllable functions via choosing different interfaces between graphene and other materials. Two types of vertically conducting devices are demonstrated: graphene stacks sandwiched between two Au micro-strips, and between two Co layers. The Au|graphene|Au junctions exhibit large magnetoresistance with ratios up to 400% at room temperature, which have potential applications in magnetic field sensors. The Co|graphene|Co junctions display a robust spin valve effect at room temperature. The layer-by-layer assembly of graphene offers a new route for graphene vertical structures. PMID:23715280

  20. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  1. Organic photovoltaic device with interfacial layer and method of fabricating same

    DOEpatents

    Marks, Tobin J.; Hains, Alexander W.

    2013-03-19

    An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5'-bis[(p-trichlorosilylpropylphenyl)phenylamino]-2,2'-bithiophene (PABTSi.sub.2).

  2. Improved insulator layer for MIS devices

    NASA Technical Reports Server (NTRS)

    Miller, W. E.

    1980-01-01

    Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

  3. Boundary layer control device for duct silencers

    NASA Technical Reports Server (NTRS)

    Schmitz, Fredric H. (Inventor); Soderman, Paul T. (Inventor)

    1993-01-01

    A boundary layer control device includes a porous cover plate, an acoustic absorber disposed under the porous cover plate, and a porous flow resistive membrane interposed between the porous cover plate and the acoustic absorber. The porous flow resistive membrane has a flow resistance low enough to permit sound to enter the acoustic absorber and high enough to damp unsteady flow oscillations.

  4. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  5. Active terahertz metamaterial devices.

    PubMed

    Chen, Hou-Tong; Padilla, Willie J; Zide, Joshua M O; Gossard, Arthur C; Taylor, Antoinette J; Averitt, Richard D

    2006-11-30

    The development of artificially structured electromagnetic materials, termed metamaterials, has led to the realization of phenomena that cannot be obtained with natural materials. This is especially important for the technologically relevant terahertz (1 THz = 10(12) Hz) frequency regime; many materials inherently do not respond to THz radiation, and the tools that are necessary to construct devices operating within this range-sources, lenses, switches, modulators and detectors-largely do not exist. Considerable efforts are underway to fill this 'THz gap' in view of the useful potential applications of THz radiation. Moderate progress has been made in THz generation and detection; THz quantum cascade lasers are a recent example. However, techniques to control and manipulate THz waves are lagging behind. Here we demonstrate an active metamaterial device capable of efficient real-time control and manipulation of THz radiation. The device consists of an array of gold electric resonator elements (the metamaterial) fabricated on a semiconductor substrate. The metamaterial array and substrate together effectively form a Schottky diode, which enables modulation of THz transmission by 50 per cent, an order of magnitude improvement over existing devices. PMID:17136089

  6. Encapsulation methods and dielectric layers for organic electrical devices

    DOEpatents

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  7. Polyaniline-based organic memristive device fabricated by layer-by-layer deposition technique

    NASA Astrophysics Data System (ADS)

    Erokhina, Svetlana; Sorokin, Vladimir; Erokhin, Victor

    2015-09-01

    Memristors and memristive devices represent a splendid area of research due to the unique possibilities for the realization of new types of computer hardware elements and mimicking several essential properties of the nervous system of living beings. The organic memristive device was developed as an electronic single-device analogue of the synapse, suitable for the realization of circuits allowing Hebbian type of learning. This work is dedicated to the realization of the active channel of organic memristive devices by polyelectrolyte self-assembling (layer-by-layer technique). Stable and reproducible electrical characteristics of the device were obtained when the thickness of the active channel was more than seven bilayers. The device revealed rectifying behaviour and the presence of hysteresis—important properties for the realization of neuromorphic systems with synapse-like properties of the individual elements. Compared to previously reported results on organic memristive devices fabricated using other methods, the present device does not require any additional doping that is usually performed through acid treatment. Such a behaviour is extremely important for the cases in which biological systems (nervous cells, slime mould, etc.) must be interfaced with the system of organic memristive devices, since acid treatment can kill living beings. [Figure not available: see fulltext.

  8. Silicon active photonic devices

    NASA Astrophysics Data System (ADS)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  9. Active multistable twisting device

    NASA Technical Reports Server (NTRS)

    Schultz, Marc R. (Inventor)

    2008-01-01

    Two similarly shaped, such as rectangular, shells are attached to one another such that they form a resulting thin airfoil-like structure. The resulting device has at least two stable equilibrium shapes. The device can be transformed from one shape to another with a snap-through action. One or more actuators can be used to effect the snap-through; i.e., transform the device from one stable shape to another. Power to the actuators is needed only to transform the device from one shape to another.

  10. Remanagement of Singlet and Triplet Excitons in Single-Emissive-Layer Hybrid White Organic Light-Emitting Devices Using Thermally Activated Delayed Fluorescent Blue Exciplex.

    PubMed

    Liu, Xiao-Ke; Chen, Zhan; Qing, Jian; Zhang, Wen-Jun; Wu, Bo; Tam, Hoi Lam; Zhu, Furong; Zhang, Xiao-Hong; Lee, Chun-Sing

    2015-11-25

    A high-performance hybrid white organic light-emitting device (WOLED) is demonstrated based on an efficient novel thermally activated delayed fluorescence (TADF) blue exciplex system. This device shows a low turn-on voltage of 2.5 V and maximum forward-viewing external quantum efficiency of 25.5%, which opens a new avenue for achieving high-performance hybrid WOLEDs with simple structures.

  11. Organic electrophosphorescence device having interfacial layers

    DOEpatents

    Choulis, Stelios A.; Mathai, Mathew; Choong, Vi-En; So, Franky

    2010-08-10

    Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

  12. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2016-07-05

    A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent.

  13. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  14. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  15. Organic electronic devices with multiple solution-processed layers

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

    2015-08-04

    A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

  16. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

    SciTech Connect

    Wu, Wei Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

    2014-07-28

    We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

  17. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  18. Atomic layer deposited aluminum oxide and Parylene C bi-layer encapsulation for biomedical implantable devices

    NASA Astrophysics Data System (ADS)

    Xie, Xianzong

    Biomedical implantable devices have been developed for both research and clinical applications, to stimulate and record physiological signals in vivo. Chronic use of biomedical devices with thin-film-based encapsulation in large scale is impeded by their lack of long-term functionality and stability. Biostable, biocompatible, conformal, and electrically insulating coatings that sustain chronic implantation are essential for chip-scale implantable electronic systems. Even though many materials have been studied to for this purpose, to date, no encapsulation method has been thoroughly characterized or qualified as a broadly applicable long-term hermetic encapsulation for biomedical implantable devices. In this work, atomic layer deposited Al2O3 and Parylene C bi-layer was investigated as encapsulation for biomedical devices. The combination of ALD Al2O3 and CVD Parylene C encapsulation extended the lifetime of coated interdigitated electrodes (IDEs) to up to 72 months (to date) with low leakage current of ~ 15 pA. The long lifetime was achieved by significantly reducing moisture permeation due to the ALD Al2O3 layer. Moreover, the bi-layer encapsulation separates the permeated moisture (mostly at the Al2O3 and Parylene interface) from the surface contaminants (mostly at the device and Al 2O3 interface), preventing the formation of localized electrolyte through condensation. Al2O3 works as an inner moisture barrier and Parylene works as an external ion barrier, preventing contact of Al2O3 with liquid water, and slowing the kinetics of alumina corrosion. Selective removal of encapsulation materials is required to expose the active sites for interacting with physiological environment. A self-aligned mask process with three steps was developed to expose active sites, composed of laser ablation, oxygen plasma etching, and BOE etching. Al2O 3 layer was found to prevent the formation of microcracks in the iridium oxide film during laser ablation. Bi-layer encapsulated

  19. Buffer layers and articles for electronic devices

    DOEpatents

    Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

    2004-07-20

    Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

  20. Dual control active superconductive devices

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1993-07-20

    A superconducting active device has dual control inputs and is constructed such that the output of the device is effectively a linear mix of the two input signals. The device is formed of a film of superconducting material on a substrate and has two main conduction channels, each of which includes a weak link region. A first control line extends adjacent to the weak link region in the first channel and a second control line extends adjacent to the weak link region in the second channel. The current flowing from the first channel flows through an internal control line which is also adjacent to the weak link region of the second channel. The weak link regions comprise small links of superconductor, separated by voids, through which the current flows in each channel. Current passed through the control lines causes magnetic flux vortices which propagate across the weak link regions and control the resistance of these regions. The output of the device taken across the input to the main channels and the output of the second main channel and the internal control line will constitute essentially a linear mix of the two input signals imposed on the two control lines. The device is especially suited to microwave applications since it has very low input capacitance, and is well suited to being formed of high temperature superconducting materials since all of the structures may be formed coplanar with one another on a substrate.

  1. CRISPR transcriptional repression devices and layered circuits in mammalian cells

    PubMed Central

    Kiani, Samira; Beal, Jacob; Ebrahimkhani, Mohammad R; Huh, Jin; Hall, Richard N; Xie, Zhen; Li, Yinqing; Weiss, Ron

    2014-01-01

    A key obstacle to creating sophisticated genetic circuits has been the lack of scalable device libraries. Here we present a modular transcriptional repression architecture based on clustered regularly interspaced palindromic repeats (CRISPR) system and examine approaches for regulated expression of guide RNAs in human cells. Subsequently we demonstrate that CRISPR regulatory devices can be layered to create functional cascaded circuits, which provide a valuable toolbox for engineering purposes. PMID:24797424

  2. CRISPR transcriptional repression devices and layered circuits in mammalian cells.

    PubMed

    Kiani, Samira; Beal, Jacob; Ebrahimkhani, Mohammad R; Huh, Jin; Hall, Richard N; Xie, Zhen; Li, Yinqing; Weiss, Ron

    2014-07-01

    A key obstacle to creating sophisticated genetic circuits has been the lack of scalable device libraries. Here we present a modular transcriptional repression architecture based on clustered regularly interspaced palindromic repeats (CRISPR) system and examine approaches for regulated expression of guide RNAs in human cells. Subsequently we demonstrate that CRISPR regulatory devices can be layered to create functional cascaded circuits, which provide a valuable toolbox for engineering purposes. PMID:24797424

  3. Photovoltaic device comprising compositionally graded intrinsic photoactive layer

    DOEpatents

    Hoffbauer, Mark A; Williamson, Todd L

    2013-04-30

    Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In.sub.1-xA.sub.xN,; wherein: i. 0.ltoreq.x.ltoreq.1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600.degree. C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.0 eV, and wherein the intrinsic photoactive layer is grown at a rate of from about 5 nm/min to about 100 nm/min.

  4. Inverted organic photovoltaic device with a new electron transport layer

    PubMed Central

    2014-01-01

    We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air. PMID:24674457

  5. Layer-by-layer Collagen Deposition in Microfluidic Devices for Microtissue Stabilization

    PubMed Central

    McCarty, William J.; Prodanov, Ljupcho; Bale, Shyam Sundhar; Bhushan, Abhinav; Jindal, Rohit; Yarmush, Martin L.; Usta, O. Berk

    2016-01-01

    Although microfluidics provides exquisite control of the cellular microenvironment, culturing cells within microfluidic devices can be challenging. 3D culture of cells in collagen type I gels helps to stabilize cell morphology and function, which is necessary for creating microfluidic tissue models in microdevices. Translating traditional 3D culture techniques for tissue culture plates to microfluidic devices is often difficult because of the limited channel dimensions. In this method, we describe a technique for modifying native type I collagen to generate polycationic and polyanionic collagen solutions that can be used with layer-by-layer deposition to create ultrathin collagen assemblies on top of cells cultured in microfluidic devices. These thin collagen layers stabilize cell morphology and function, as shown using primary hepatocytes as an example cell, allowing for the long term culture of microtissues in microfluidic devices. PMID:26485274

  6. Graphene active plasmonics for terahertz device applications

    NASA Astrophysics Data System (ADS)

    Otsuji, Taiichi; Dubinov, Alexander; Ryzhii, Maxim; Boubanga Tombet, Stephane; Satou, Akira; Mitin, Vladimir; Shur, Michael S.; Ryzhii, Victor

    2015-05-01

    This paper reviews recent advances in the double-graphene-layer (DGL) active plasmonic heterostructures for the terahertz (THz) device applications. The DGL consists of a core shell in which a thin tunnel barrier layer is sandwiched by the two GLs being independently connected with the side contacts and outer gate stack layers at both sides. The DGL core shell works as a nano-capacitor, exhibiting inter-GL resonant tunneling (RT) when the band offset between the two GLs is aligned. The RT produces a strong nonlinearity with a negative differential conductance in the DGL current-voltage characteristics. The excitation of the graphene plasmons by the THz radiation resonantly modulates the tunneling currentvoltage characteristics. When the band offset is aligned to the THz photon energy, the DGL structure can mediate photonassisted RT, resulting in resonant emission or detection of the THz radiation. The cooperative double-resonant excitation with structure-sensitive graphene plasmons gives rise to various functionalities such as rectification (detection), photomixing, higher harmonic generation, and self-oscillation, in the THz device implementations.

  7. Nanofabrication of spin-transfer torque devices by a polymethylmethacrylate mask one step process: Giant magnetoresistance versus single layer devices

    NASA Astrophysics Data System (ADS)

    Parge, Anne; Niermann, Tore; Seibt, Michael; Münzenberg, Markus

    2007-05-01

    We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.

  8. Structural complexities in the active layers of organic electronics.

    PubMed

    Lee, Stephanie S; Loo, Yueh-Lin

    2010-01-01

    The field of organic electronics has progressed rapidly in recent years. However, understanding the direct structure-function relationships between the morphology in electrically active layers and the performance of devices composed of these materials has proven difficult. The morphology of active layers in organic electronics is inherently complex, with heterogeneities existing across multiple length scales, from subnanometer to micron and millimeter range. A major challenge still facing the organic electronics community is understanding how the morphology across all of the length scales in active layers collectively determines the device performance of organic electronics. In this review we highlight experiments that have contributed to the elucidation of structure-function relationships in organic electronics and also point to areas in which knowledge of such relationships is still lacking. Such knowledge will lead to the ability to select active materials on the basis of their inherent properties for the fabrication of devices with prespecified characteristics.

  9. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOEpatents

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  10. Maximal light-energy transfer through a dielectric/metal-layered electrode on a photoactive device.

    PubMed

    Kim, Kyoung-Ho; Park, Q-Han

    2014-01-27

    We report the fabrication of an optimized low reflective dielectric/metal-layered electrode that provides significant electrical conductivity and light transparency in the near-infrared wavelength regime. By making the metal film thickness thick enough and choosing a proper dielectric layer with a certain thickness, we show that our suggested electrode significantly reduces the light reflection while preserving high electrical conductivity. We demonstrate our optimized electrodes present a highly conductive surface with a sheet resistance of 5.2 Ω/sq and a high light transmittance of near 85% in the near-infrared regime. We also apply our optimized electrode to thin-film organic photovoltaic devices and show the electrode helps in absorbing light energy inside an active layer. We believe that this simple but powerful layered electrode will pave the way for designing transparent electrodes on photoactive devices.

  11. Tunable Photonic Devices in Ferroelectric-Based Layered Structures

    NASA Astrophysics Data System (ADS)

    Xin, Jianzhuo

    This thesis presents the studies on the optical properties of perovskite ferroelectric thin films, as well as the preparation and applications of ferroelectrics in tunable photonic devices. Ba(Zr,Ti)O3 (BZT) thin films with different Zr concentration were grown on MgO substrates by pulsed laser deposition, and their structural and optical properties in the visible range were systematically characterized, including the out-of-plane lattice constant, grain size, refractive index, optical band gap energy, electro-optic coefficient, optical loss and absorption coefficient. The obtained results provide information for the design of BZT thin film-based optical devices. One-dimensional photonic crystal filter working in the terahertz (THz) range was studied. The transmission properties of SrTiO3 (STO) crystals were first characterized by THz time-domain spectroscopy. Si/STO multilayers with different STO defect thicknesses were designed by the transfer matrix method and then constructed by polishing and stacking. The shift of defect mode was observed and comparable with the calculations. Two-dimensional photonic structures in the optical and infra-red range were then attempted. A combination of nanoimprint lithography and inductively coupled plasma etching were investigated on (Ba,Sr)TiO3 thin films. Then, in order to simplify the nanoimprint process and allow thick metal sacrificial layer deposition for high aspect-ratio etching, a transfer imprint lithography technique was developed. Finally, surface plasmon resonance (SPR) tuning via thermally-induced refractive index changes in ferroelectrics was investigated. Ag stripes with periodicity 750 nm were fabricated on flat BST surface by nanoimprint lithography and subsequent lift-off. (-1), (2) and (-2) SP modes from Ag/BST interface were observed in visible range. Red shift of the modes up to 3.9 nm was obtained with increasing temperature. Then continuous Au film on corrugated BST surface with periodicity of 1 mum was

  12. Multi-layer electrode for high contrast electrochromic devices

    SciTech Connect

    Schwendeman, Irina G.; Finley, James J.; Polcyn, Adam D.; Boykin, Cheri M.

    2011-11-01

    An electrochromic device includes a first substrate spaced from a second substrate. A first transparent conductive electrode is formed over at least a portion of the first substrate. A polymeric anode is formed over at least a portion of the first conductive electrode. A second transparent conductive electrode is formed over at least a portion of the second substrate. In one aspect of the invention, a multi-layer polymeric cathode is formed over at least a portion of the second conductive electrode. In one non-limiting embodiment, the multi-layer cathode includes a first cathodically coloring polymer formed over at least a portion of the second conductive electrode and a second cathodically coloring polymer formed over at least a portion of the first cathodically coloring polymer. An ionic liquid is positioned between the anode and the cathode.

  13. Ultra-thin layer packaging for implantable electronic devices

    NASA Astrophysics Data System (ADS)

    Hogg, A.; Aellen, T.; Uhl, S.; Graf, B.; Keppner, H.; Tardy, Y.; Burger, J.

    2013-07-01

    State of the art packaging for long-term implantable electronic devices generally uses reliable metal and glass housings; however, these are limited in the miniaturization potential and cost reduction. This paper focuses on the development of biocompatible hermetic thin-film packaging based on poly-para-xylylene (Parylene-C) and silicon oxide (SiOx) multilayers for smart implantable microelectromechanical systems (MEMS) devices. For the fabrication, a combined Parylene/SiOx single-chamber deposition system was developed. Topological aspects of multilayers were characterized by atomic force microscopy and scanning electron microscopy. Material compositions and layer interfaces were analyzed by Fourier transform infrared spectrometry and x-ray photoelectron spectroscopy. To evaluate the multilayer corrosion protection, water vapor permeation was investigated using a calcium mirror test. The calcium mirror test shows very low water permeation rates of 2 × 10-3 g m-2 day-1 (23 °C, 45% RH) for a 4.7 µm multilayer, which is equivalent to a 1.9 mm pure Parylene-C coating. According to the packaging standard MIL-STD-883, the helium gas tightness was investigated. These helium permeation measurements predict that a multilayer of 10 µm achieves the hermeticity acceptance criterion required for long-term implantable medical devices.

  14. Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer Stability.

    PubMed

    Bag, Monojit; Renna, Lawrence A; Adhikari, Ramesh Y; Karak, Supravat; Liu, Feng; Lahti, Paul M; Russell, Thomas P; Tuominen, Mark T; Venkataraman, D

    2015-10-14

    Solar cells fabricated using alkyl ammonium metal halides as light absorbers have the right combination of high power conversion efficiency and ease of fabrication to realize inexpensive but efficient thin film solar cells. However, they degrade under prolonged exposure to sunlight. Herein, we show that this degradation is quasi-reversible, and that it can be greatly lessened by simple modifications of the solar cell operating conditions. We studied perovskite devices using electrochemical impedance spectroscopy (EIS) with methylammonium (MA)-, formamidinium (FA)-, and MA(x)FA(1-x) lead triiodide as active layers. From variable temperature EIS studies, we found that the diffusion coefficient using MA ions was greater than when using FA ions. Structural studies using powder X-ray diffraction (PXRD) show that for MAPbI3 a structural change and lattice expansion occurs at device operating temperatures. On the basis of EIS and PXRD studies, we postulate that in MAPbI3 the predominant mechanism of accelerated device degradation under sunlight involves thermally activated fast ion transport coupled with a lattice-expanding phase transition, both of which are facilitated by absorption of the infrared component of the solar spectrum. Using these findings, we show that the devices show greatly improved operation lifetimes and stability under white-light emitting diodes, or under a solar simulator with an infrared cutoff filter or with cooling. PMID:26414066

  15. Ultrafast switching of an electrochromic device based on layered double hydroxide/Prussian blue multilayered films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoxi; Zhou, Awu; Dou, Yibo; Pan, Ting; Shao, Mingfei; Han, Jingbin; Wei, Min

    2015-10-01

    Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K+ ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH/PB)n-ITO/0.1 M KCl electrolyte/ITO sandwich structure displays superior response properties (0.91/1.21 s for coloration/bleaching), a comparable coloration efficiency (68 cm2 C-1) and satisfactory optical contrast (45% at 700 nm), in comparison with other inorganic material-based ECDs reported previously. Therefore, this work presents a facile and cost-effective strategy to immobilize electrochemically active nanoparticles in a 2D inorganic matrix for potential application in displays, smart windows and optoelectronic devices.Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K+ ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH

  16. Active and intelligent inhaler device development.

    PubMed

    Tobyn, Mike; Staniforth, John N; Morton, David; Harmer, Quentin; Newton, Mike E

    2004-06-11

    The dry powder inhaler, which has traditionally relied on the patient's inspiratory force to deaggregate and deliver the active agent to the target region of the lung, has been a successful delivery device for the provision of locally active agents for the treatment of conditions such as asthma and chronic obstructive pulmonary disease (COPD). However, such devices can suffer from poor delivery characteristics and/or poor reproducibility. More recently, drugs for systemic delivery and more high value compounds have been put into DPI devices. Regulatory, dosing, manufacturing and economic concerns have demanded that a more efficient and reproducible performance is achieved by these devices. Recently strategies have been put in place to produce a more efficient DPI device/formulation combination. Using one novel device as an example the paper will examine which features are important in such a device and some of the strategies required to implement these features. All of these technological advances are invisible, and may be irrelevant, to the patient. However, their inability to use an inhaler device properly has significant implications for their therapy. Use of active device mechanisms, which reduce the dependence on patient inspiratory flow, and sensible industrial design, which give the patient the right clues to use, are important determinants of performance here.

  17. Ultrafast switching of an electrochromic device based on layered double hydroxide/Prussian blue multilayered films.

    PubMed

    Liu, Xiaoxi; Zhou, Awu; Dou, Yibo; Pan, Ting; Shao, Mingfei; Han, Jingbin; Wei, Min

    2015-10-28

    Electrochromic materials are the most important and essential components in an electrochromic device. Herein, we fabricated high-performance electrochromic films based on exfoliated layered double hydroxide (LDH) nanosheets and Prussian blue (PB) nanoparticles via the layer-by-layer assembly technique. X-ray diffraction and UV-vis absorption spectroscopy indicate a periodic layered structure with uniform and regular growth of (LDH/PB)n ultrathin films (UTFs). The resulting (LDH/PB)n UTF electrodes exhibit electrochromic behavior arising from the reversible K(+) ion migration into/out of the PB lattice, which induces a change in the optical properties of the UTFs. Furthermore, an electrochromic device (ECD) based on the (LDH/PB)n-ITO/0.1 M KCl electrolyte/ITO sandwich structure displays superior response properties (0.91/1.21 s for coloration/bleaching), a comparable coloration efficiency (68 cm(2) C(-1)) and satisfactory optical contrast (45% at 700 nm), in comparison with other inorganic material-based ECDs reported previously. Therefore, this work presents a facile and cost-effective strategy to immobilize electrochemically active nanoparticles in a 2D inorganic matrix for potential application in displays, smart windows and optoelectronic devices. PMID:26420230

  18. Optical Enhancement in Optoelectronic Devices Using Refractive Index Grading Layers.

    PubMed

    Lee, Illhwan; Park, Jae Yong; Gim, Seungo; Kim, Kisoo; Cho, Sang-Hwan; Choi, Chung Sock; Song, Seung-Yong; Lee, Jong-Lam

    2016-02-10

    We enhanced the optical transmittance of a multilayer barrier film by inserting a refractive index grading layer (RIGL). The result indicates that the Fresnel reflection, induced by the difference of refractive indices between Si(x)N(y) and SiO2, is reduced by the RIGL. To eliminate the Fresnel reflection while maintaining high transmittance, the optimized design of grading structures with the RIGL was conducted using an optical simulator. With the RIGL, we achieved averaged transmittance in the visible wavelength region by 89.6%. It is found that the optimized grading structure inserting the multilayer barrier film has a higher optical transmittance (89.6%) in the visible region than that of a no grading sample (82.6%). Furthermore, luminance is enhanced by 14.5% (from 10,190 to 11,670 cd m(-2) at 30 mA cm(-2)) when the grading structure is applied to organic light-emitting diodes. Finally, the results offer new opportunities in development of multilayer barrier films, which assist industrialization of very cost-effective flexible organic electronic devices.

  19. Melanin as an active layer in biosensors

    SciTech Connect

    Piacenti da Silva, Marina Congiu, Mirko Oliveira Graeff, Carlos Frederico de; Fernandes, Jéssica Colnaghi Biziak de Figueiredo, Natália Mulato, Marcelo

    2014-03-15

    The development of pH sensors is of great interest due to its extensive application in several areas such as industrial processes, biochemistry and particularly medical diagnostics. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on melanin thin films as active layer are investigated and the physical mechanisms related to the device operation are discussed. Thin films were produced from different melanin precursors on indium tin oxide (ITO) and gold substrates and were investigated by Atomic Force Microscopy and Electrochemical Impedance Spectroscopy. Experiments were performed in the pH range from 2 to 12. EGFETs with melanin deposited on ITO and on gold substrates showed sensitivities ranging from 31.3 mV/pH to 48.9 mV/pH, depending on the melanin precursor and the substrate used. The pH detection is associated with specific binding sites in its structure, hydroxyl groups and quinone imine.

  20. Pd/Ni-WO3 anodic double layer gasochromic device

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

    2004-04-20

    An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

  1. Method for making photovoltaic devices using oxygenated semiconductor thin film layers

    SciTech Connect

    Johnson, James Neil; Albin, David Scott; Feldman-Peabody, Scott; Pavol, Mark Jeffrey; Gossman, Robert Dwayne

    2014-12-16

    A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

  2. Theoretical Determination of The Optimum Thickness of Perylene Layer in Bilayer Phthalocyanine/Perylene Photovoltaic Device

    NASA Astrophysics Data System (ADS)

    Pratiwi, Herlina; Siahaan, Timothy; Satriawan, Mirza; Nurwantoro, Pekik; Triyana, Kuwat

    2009-09-01

    We do theoretical study on thickness of the active layers in a heterojunction bilayer thin film photovoltaic device based on copper phthalocyanine (CuPc)/perylene that gives the highest Incident Photon to Current Efficiency (IPCE). The device we study consists Glass (1 mm)/ITO (Indium Tin Oxide, 120 nm)/CuPc (50 nm)/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride, x nm)/Ag (40 nm), where x is the thickness of the PTCDA layer that we calculate here. The calculation is based on assumption that the photocurrent generation process is the result of the creation of photogenerated excitons, which difuse before dissociated at the CuPc/PTCDA interface following the diffusion equation, by internal optical electric field that comes from light exposure. We also assume that almost all photocurrent is created in the CuPc/PTCDA interface. Because the order of the thickness of the active layers is the same or smaller than of the wavelength of visible light, we take into account the effect of reflection and interference in the calculation of internal optical electric field distribution inside the device by making use complex indices of refraction of the active materials in our calculation. The modulus of it is proportional with the number generated excitons. The general solution of the exciton diffusion equation was used for calculating the photocurrent and the IPCE. Here, we find the optimum thickness of PTCDA layer that gives greatest IPCE at the wavelength of 344 nm and 467 nm, which are the wavelengths at which the absorption coefficients of CuPc and PTCDA, respectively, reach the maximum values.

  3. Hydrothermal regimes of the dry active layer

    NASA Astrophysics Data System (ADS)

    Ishikawa, Mamoru; Zhang, Yinsheng; Kadota, Tsutomu; Ohata, Tetsuo

    2006-04-01

    Evaporation and condensation in the soil column clearly influence year-round nonconductive heat transfer dynamics in the dry active layer underlying semiarid permafrost regions. We deduced this from heat flux components quantified using state-of-the-art micrometeorological data sets obtained in dry and moist summers and in winters with various snow cover depths. Vapor moves easily through large pores, some of which connect to the atmosphere, allowing (1) considerable active layer warming driven by pipe-like snowmelt infiltration, and (2) direct vapor linkage between atmosphere and deeper soils. Because of strong adhesive forces, water in the dry active layer evaporates with great difficulty. The fraction of latent heat to total soil heat storage ranged from 26 to 45% in dry and moist summers, respectively. These values are not negligible, despite being smaller than those of arctic wet active layer, in which only freezing and thawing were considered.

  4. Graphene as an efficient interfacial layer for electrochromic devices.

    PubMed

    Lin, Feng; Bult, Justin B; Nanayakkara, Sanjini; Dillon, Anne C; Richards, Ryan M; Blackburn, Jeffrey L; Engtrakul, Chaiwat

    2015-06-01

    This study presents an interfacial modification strategy to improve the performance of electrochromic films that were fabricated by a magnetron sputtering technique. High-quality graphene sheets, synthesized by chemical vapor deposition, were used to modify fluorine-doped tin oxide substrates, followed by the deposition of high-performance nanocomposite nickel oxide electrochromic films. Electrochromic cycling results revealed that a near-complete monolayer graphene interfacial layer improves the electrochromic performance in terms of switching kinetics, activation period, coloration efficiency, and bleached-state transparency, while maintaining ∼100% charge reversibility. The present study offers an alternative route for improving the interfacial properties between electrochromic and transparent conducting oxide films without relying on conventional methods such as nanostructuring or thin film composition control. PMID:25950270

  5. Buffer layers for REBCO films for use in superconducting devices

    SciTech Connect

    Goyal, Amit; Wee, Sung-Hun

    2014-06-10

    A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

  6. Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.

    PubMed

    Kim, Dong Uk; Park, Kwan Seob; Jeong, Chan Bae; Kim, Geon Hee; Chang, Ki Soo

    2016-06-27

    Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.

  7. Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.

    PubMed

    Kim, Dong Uk; Park, Kwan Seob; Jeong, Chan Bae; Kim, Geon Hee; Chang, Ki Soo

    2016-06-27

    Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation. PMID:27410553

  8. Method of producing strained-layer semiconductor devices via subsurface-patterning

    DOEpatents

    Dodson, Brian W.

    1993-01-01

    A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

  9. Polymeric waveguide electro-optic beam-steering device with DNA biopolymer conductive cladding layers

    NASA Astrophysics Data System (ADS)

    Aga, Roberto S.; Ouchen, Fahima; Lesko, Alyssa; Telek, Brian A.; Fehrman Cory, Emily M.; Bartsch, Carrie M.; Lombardi, Jack; Grote, James; Heckman, Emily M.

    2012-11-01

    A polymer electro-optic (EO) waveguide beam-steering device with deoxyribonucleic acid (DNA) biopolymer conductive cladding layers and a core layer of the commercially available EO polymer SEO100 is demonstrated with 100% relative poling efficiency. This demonstration device exhibits a deflection efficiency of 99 mrad/kV with a corresponding in-device EO coefficient r33 of 124 pm/V at 1550 nm. When the DNA biopolymer bottom cladding layer is replaced by the commonly used cladding polymer UV15, the deflection efficiency and in-device r33 drop to 34 mrad/kV and 43 pm/V, respectively.

  10. Resonant tunneling device with two-dimensional quantum well emitter and base layers

    DOEpatents

    Simmons, Jerry A.; Sherwin, Marc E.; Drummond, Timothy J.; Weckwerth, Mark V.

    1998-01-01

    A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.

  11. Resonant tunneling device with two-dimensional quantum well emitter and base layers

    DOEpatents

    Simmons, J.A.; Sherwin, M.E.; Drummond, T.J.; Weckwerth, M.V.

    1998-10-20

    A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation. 43 figs.

  12. Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

    NASA Technical Reports Server (NTRS)

    Barron, Andrew R. (Inventor); Hepp, Aloysius F. (Inventor); Jenkins, Phillip P. (Inventor); MacInnes, Andrew N. (Inventor)

    1999-01-01

    A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

  13. Methods for making a multi-layer seal for electrochemical devices

    DOEpatents

    Chou, Yeong-Shyung; Meinhardt, Kerry D.; Stevenson, Jeffry W.

    2007-05-29

    Multi-layer seals are provided that find advantageous use for reducing leakage of gases between adjacent components of electrochemical devices. Multi-layer seals of the invention include a gasket body defining first and second opposing surfaces and a compliant interlayer positioned adjacent each of the first and second surfaces. Also provided are methods for making and using the multi-layer seals, and electrochemical devices including said seals.

  14. Multi-layer micro/nanofluid devices with bio-nanovalves

    SciTech Connect

    Li, Hao; Ocola, Leonidas E.; Auciello, Orlando H.; Firestone, Millicent A.

    2013-01-01

    A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

  15. Active plasmonic and metamaterials and devices

    NASA Astrophysics Data System (ADS)

    Kim, Seong-Ku; Sylvain, Nathan; Benight, Stephanie J.; Kosilkin, Ilya; Bale, Denise H.; Robinson, Bruce H.; Park, Junghun; Geary, Kevin; Jen, Alex K.; Steier, William H.; Fetterman, Harold R.; Berini, Pierre; Dalton, Larry R.

    2010-08-01

    This communication focuses on the integration of organic nonlinear optical and gain materials into plasmonic and metamaterial device architectures and most specifically focuses on the integration of organic electro-optic (OEO) materials into such structures. The central focus is on structures that lead to sub-optical wavelength concentration of light (mode confinement) and the interaction of photonic and plasmonic modes. Optical loss and bandwidth limitations are serious issues with such structures and optical loss is evaluated for prototype device architectures associated with the use of silver and gold nanoparticles and membranes supporting plasmonic resonances. Electro-optic activity in organic materials requires that chromophores exhibit finite noncentrosymmetric organization. Because of material conductivity and integration issues, plasmonic and metamaterial device architectures are more challenging than conventional triple stack all-organic device architectures and electro-optic of a given OEO material may be an order of magnitude less in such structures. Because of this, we have turned to a variety of materials processing options for such integration including crystal growth, sequential synthesis/self assembly, and electric field poling of materials deposited from solution or by vapor deposition. Recent demonstration of integration of silicon photonic modulator and lithium niobate modulator structures with metallic plasmonic structures represent a severe challenge for organic electro-optic material plasmonic devices as these devices afford high bandwidth operation and attractive VμL performance. Optical loss remains a challenge for all structures.

  16. [Batteries Used in Active Implantable Medical Devices].

    PubMed

    Ma, Bozhi; Hao, Hongwei; Li, Luming

    2015-03-01

    In recent years active implantable medical devices(AIMD) are being developed rapidly. Many battery systems have been developed for different AIMD applications. These batteries have the same requirements which include high safety, reliability, energy density and long service life, discharge indication. History, present and future of batteries used in AIMD are introduced in the article. PMID:26524787

  17. Permafrost Active Layer Seismic Interferometry Experiment (PALSIE).

    SciTech Connect

    Abbott, Robert; Knox, Hunter Anne; James, Stephanie; Lee, Rebekah; Cole, Chris

    2016-01-01

    We present findings from a novel field experiment conducted at Poker Flat Research Range in Fairbanks, Alaska that was designed to monitor changes in active layer thickness in real time. Results are derived primarily from seismic data streaming from seven Nanometric Trillium Posthole seismometers directly buried in the upper section of the permafrost. The data were evaluated using two analysis methods: Horizontal to Vertical Spectral Ratio (HVSR) and ambient noise seismic interferometry. Results from the HVSR conclusively illustrated the method's effectiveness at determining the active layer's thickness with a single station. Investigations with the multi-station method (ambient noise seismic interferometry) are continuing at the University of Florida and have not yet conclusively determined active layer thickness changes. Further work continues with the Bureau of Land Management (BLM) to determine if the ground based measurements can constrain satellite imagery, which provide measurements on a much larger spatial scale.

  18. Layer-by-layer nanoencapsulation of camptothecin with improved activity.

    PubMed

    Parekh, Gaurav; Pattekari, Pravin; Joshi, Chaitanya; Shutava, Tatsiana; DeCoster, Mark; Levchenko, Tatyana; Torchilin, Vladimir; Lvov, Yuri

    2014-04-25

    160 nm nanocapsules containing up to 60% of camptothecin in the core and 7-8 polyelectrolyte bilayers in the shell were produced by washless layer-by-layer assembly of heparin and block-copolymer of poly-l-lysine and polyethylene glycol. The outer surface of the nanocapsules was additionally modified with polyethylene glycol of 5 kDa or 20 kDa molecular weight to attain protein resistant properties, colloidal stability in serum and prolonged release of the drug from the capsules. An advantage of the LbL coated capsules is the preservation of camptothecin lactone form with the shell assembly starting at acidic pH and improved chemical stability of encapsulated drug at neutral and basic pH, especially in the presence of albumin that makes such formulation more active than free camptothecin. LbL nanocapsules preserve the camptothecin lactone form at pH 7.4 resulting in triple activity of the drug toward CRL2303 glioblastoma cell. PMID:24508806

  19. Layer-by-layer nanoencapsulation of camptothecin with improved activity

    PubMed Central

    Parekh, Gaurav; Pattekari, Pravin; Joshi, Chaitanya; Shutava, Tatsiana; DeCoster, Mark; Levchenko, Tatyana; Torchilin, Vladimir; Lvov, Yuri

    2014-01-01

    160 nm nanocapsules containing up to 60% of camptothecin in the core and 7–8 polyelectrolyte bilayers in the shell were produced by washless layer-by-layer assembly of heparin and block-copolymer of poly-L-lysine and polyethylene glycol. The outer surface of the nanocapsules was additionally modified with polyethylene glycol of 5 kDa or 20 kDa molecular weight to attain protein resistant properties, colloidal stability in serum and prolonged release of the drug from the capsules. An advantage of the LbL coated capsules is the preservation of camptothecin lactone form with the shell assembly starting at acidic pH and improved chemical stability of encapsulated drug at neutral and basic pH, especially in the presence of albumin that makes such formulation more active than free camptothecin. LbL nanocapsules preserve the camptothecin lactone form at pH 7.4 resulting in triple activity of the drug toward CRL2303 glioblastoma cell. PMID:24508806

  20. Micro- and Nanostructured Materials for Active Devices and Molecular Electronics

    SciTech Connect

    Martin, Peter M.; Graff, Gordon L.; Gross, Mark E.; Burrows, Paul E.; Bennett, Wendy D.; Mast, Eric S.; Hall, Michael G.; Bonham, Charles C.; Zumhoff, Mac R.; Williford, Rick E.

    2003-10-01

    Traditional single layer barrier coatings are not adequate in preventing degradation of the performance of organic molecular electronic and other active devices. Most advanced devices used in display technology now consist of micro and nanostructured small molecule, polymer and inorganic coatings with thin high reactive group 1A metals. This includes organic electronics such as organic light emitting devices (OLED). The lifetimes of these devices rapidly degrades when they are exposed to atmospheric oxygen and water vapor. Thin film photovoltaics and batteries are also susceptible to degradation by moisture and oxygen. Using in-line coating techniques we apply a composite nanostructured inorganic/polymer thin film barrier that restricts moisture and oxygen permeation to undetectable levels using conventional permeation test equipment. We describe permeation mechanisms for this encapsulation coating and flat panel display and other device applications. Permeation through the multilayer barrier coating is defect and pore limited and can be described by Knudsen diffusion involving a long and tortuous path. Device lifetime is also enhanced by the long lag times required to reach the steady state flux regime. Permeation rates in the range of 10-6 cc,g/m2/d have been achieved and OLED device lifetimes. The structure is robust, yet flexible. The resulting device performance and lifetimes will also be described. The barrier film can be capped with a thin film of transparent conductive oxide yielding an engineered nanostructured device for next generation, rugged, lightweight or flexible displays. This enables, for the first time, thin film encapsulation of emissive organic displays.

  1. Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

    SciTech Connect

    Kim, Jaehwan; Min, Daehong; Jang, Jongjin; Lee, Kyuseung; Chae, Sooryong; Nam, Okhyun

    2014-10-28

    In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

  2. Effect of outermost layers on resonant cavity enhanced devices

    NASA Astrophysics Data System (ADS)

    Chung, Il-Sug; Lee, Yong Tak; Kim, Jae-Eun; Park, Hae Yong

    2004-09-01

    Both the reflectivity and the reflection delay of a quarter wave mirror (QWM) can be controlled by choosing the outermost layer of the QWM appropriately. For a GaAs /Al0.75Ga0.25As QWM, depositing a Si layer as the incoming outermost layer decreases the reflectivity to the same degree as removing 19.6 layers, and increases the reflection delay by 12.0 times. Likewise, when using a TiO2 layer, the reflectivity decreases to a level similar to the removal of 16.1 layers while the reflection delay is 7.9 times longer. Therefore, an efficient method to fabricate resonant cavity enhanced photodetectors for bidirectional optical interconnects is proposed. This method needs no subsequent etching process while giving a quantum efficiency of approximately 90% using currently available deposition techniques. Furthermore, the tunable wavelength and bandwidth ranges of microelectromechanical system tunable filters can be controlled separately by the outermost layer, thereby allowing filters with different bandwidths to be fabricated on the same wafer.

  3. Photovoltaic devices comprising zinc stannate buffer layer and method for making

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.

    2001-01-01

    A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

  4. Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices.

    PubMed

    Lyu, Fei; Liu, Xinfu; Ding, Yinjie; Toh, Eng-Huat; Zhang, Zhenyan; Pan, Yifan; Wang, Zhen; Li, Chengjie; Li, Li; Sha, Jin; Pan, Hongbing

    2016-01-15

    This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points impacting their performance, were characterized using a self-built measurement system. The work analyzes the influences of the aluminum covering on those two aspects of the performance. The aluminum layer covering mainly leads to an eddy-current effect in an unstable magnetic field and an additional depletion region above the active region. Those two points have influences on the sensitivity and the offset voltage, respectively. The analysis guides the designer whether to choose covering with an aluminum layer the active region of the Hall sensor as a method to reduce the flicker noise and to improve the stability of the Hall sensor. Because Hall devices, as a reference element, always suffer from a large dispersion, improving their stability is a crucial issue.

  5. Active superconducting devices formed of thin films

    DOEpatents

    Martens, Jon S.; Beyer, James B.; Nordman, James E.; Hohenwarter, Gert K. G.

    1991-05-28

    Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.

  6. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  7. Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

    SciTech Connect

    Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

    2015-05-14

    The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.

  8. Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

    DOE PAGES

    Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

    2015-05-14

    The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and wemore » discuss relevant experimental data.« less

  9. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

    NASA Astrophysics Data System (ADS)

    Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B.; Birdwell, A. Glen; Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V.

    2014-04-01

    We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

  10. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

    PubMed

    Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

    2014-04-18

    We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence. PMID:24642948

  11. Ultrasound radiation from a three-layer thermoacoustic transformation device.

    PubMed

    Nishioka, Takuya; Teshima, Yu; Mano, Takashi; Sakai, Ken; Asada, Takaaki; Matsukawa, Mami; Ohta, Tetsuo; Hiryu, Shizuko

    2015-03-01

    A thermophone is a thermoacoustic transducer, which generates sound via time-varying Joule heating of an electrically conductive layer, which leads to expansion and contraction of a small pocket of air near the surface of the film. In this work, a 10-μm-thick Ag-Pd conductive film was coupled with heat-insulating and heat-releasing layers to fabricate a three-layer thermophone for generating ultrasound. The heat-insulating layer was 47 μm thick, and was made of glass. The heat-releasing layer was 594 μm thick, and was made of 94% alumina. Because of the simple sound-generation mechanism, which does not require mechanical moving parts, the Ag-Pd conductive film on the glass substrate can produce ultrasound radiation with broadband frequency characteristics, where exiting commercial electrode materials were used. We also demonstrate that the measured directivity patterns are in good agreement with theoretical predictions, assuming a rectangular diaphragm with the same size as the metallic film.

  12. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    NASA Astrophysics Data System (ADS)

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-06-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

  13. Versatile alignment layer method for new types of liquid crystal photonic devices

    SciTech Connect

    Finnemeyer, V.; Bryant, D.; Lu, L.; Bos, P.; Reich, R.; Clark, H.; Berry, S.; Bozler, C.; Yaroshchuk, O.

    2015-07-21

    Liquid crystal photonic devices are becoming increasingly popular. These devices often present a challenge when it comes to creating a robust alignment layer in pre-assembled cells. In this paper, we describe a method of infusing a dye into a microcavity to produce an effective photo-definable alignment layer. However, previous research on such alignment layers has shown that they have limited stability, particularly against subsequent light exposure. As such, we further describe a method of utilizing a pre-polymer, infused into the microcavity along with the liquid crystal, to provide photostability. We demonstrate that the polymer layer, formed under ultraviolet irradiation of liquid crystal cells, has been effectively localized to a thin region near the substrate surface and provides a significant improvement in the photostability of the liquid crystal alignment. This versatile alignment layer method, capable of being utilized in devices from the described microcavities to displays, offers significant promise for new photonics applications.

  14. Device for measuring oxygen activity in liquid sodium

    DOEpatents

    Roy, P.; Young, R.S.

    1973-12-01

    A composite ceramic electrolyte in a configuration (such as a closed end tube or a plate) suitable to separate liquid sodium from a reference electrode with a high impedance voltmeter connected to measure EMF between the sodium and the reference electrode as a measure of oxygen activity in the sodium is described. The composite electrolyte consists of zirconiacalcia with a bonded layer of thoria-yttria. The device is used with a gaseous reference electrode on the zirconia-calcia side and liquid sodium on the thoria-yttria side of the electrolyte. (Official Gazette)

  15. Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

    SciTech Connect

    Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

    2015-05-12

    A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

  16. The role of the inserted layer in resistive random access memory device

    NASA Astrophysics Data System (ADS)

    Zhang, Dainan; Ma, Guokun; Zhang, Huaiwu; Tang, Xiaoli; Zhong, Zhiyong; Jie, Li; Su, Hua

    2016-07-01

    NiO resistive switching devices were fabricated by reactive DC magnetron sputtering at room temperature containing different inserted layers. From measurements, we demonstrated the filaments were made up by metal Co rather than the oxygen defect or other metal. A current jumping phenomenon in the SET process was observed, evidencing that the filament generating procedure was changed due to the inserted layers. In this process, we demonstrate the current jumping appeared in higher voltage region when the position of inserted layer was close to the bottom electrode. The I-V curves shifted to the positive direction as the thickness of inserted layer increasing. With the change of the number of inserted layers, SET voltages varied while the RESET voltage kept stable. According to the electrochemical metallization memory mechanism, detailed explanations on all the phenomena were addressed. This discovery is supposed of great potentials in the use of designing multi-layer RRAM devices.

  17. Encoding Active Device Elements at Nanowire Tips.

    PubMed

    No, You-Shin; Gao, Ruixuan; Mankin, Max N; Day, Robert W; Park, Hong-Gyu; Lieber, Charles M

    2016-07-13

    Semiconductor nanowires and other one-dimensional materials are attractive for highly sensitive and spatially confined electrical and optical signal detection in biological and physical systems, although it has been difficult to localize active electronic or optoelectronic device function at one end of such one-dimensional structures. Here we report a new nanowire structure in which the material and dopant are modulated specifically at only one end of nanowires to encode an active two-terminal device element. We present a general bottom-up synthetic scheme for these tip-modulated nanowires and illustrate this with the synthesis of nanoscale p-n junctions. Electron microscopy imaging verifies the designed p-Si nanowire core with SiO2 insulating inner shell and n-Si outer shell with clean p-Si/n-Si tip junction. Electrical transport measurements with independent contacts to the p-Si core and n-Si shell exhibited a current rectification behavior through the tip and no detectable current through the SiO2 shell. Electrical measurements also exhibited an n-type response in conductance versus water-gate voltage with pulsed gate experiments yielding a temporal resolution of at least 0.1 ms and ∼90% device sensitivity localized to within 0.5 μm from the nanowire p-n tip. In addition, photocurrent experiments showed an open-circuit voltage of 0.75 V at illumination power of ∼28.1 μW, exhibited linear dependence of photocurrent with respect to incident illumination power with an estimated responsivity up to ∼0.22 A/W, and revealed localized photocurrent generation at the nanowire tip. The tip-modulated concept was further extended to a top-down/bottom-up hybrid approach that enabled large-scale production of vertical tip-modulated nanowires with a final synthetic yield of >75% with >4300 nanowires. Vertical tip-modulated nanowires were fabricated into >50 individually addressable nanowire device arrays showing diode-like current-voltage characteristics. These tip

  18. Device structure for OLED light device having multi element light extraction and luminescence conversion layer

    DOEpatents

    Antoniadis; Homer , Krummacher; Benjamin Claus

    2008-01-22

    An apparatus such as a light source has a multi-element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

  19. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    NASA Astrophysics Data System (ADS)

    Tondini, S.; Pucker, G.; Pavesi, L.

    2016-09-01

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO2. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  20. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

    DOEpatents

    Norman, Andrew G; Ptak, Aaron J

    2013-08-13

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

  1. Layered double hydroxide materials coated carbon electrode: New challenge to future electrochemical power devices

    NASA Astrophysics Data System (ADS)

    Djebbi, Mohamed Amine; Braiek, Mohamed; Namour, Philippe; Ben Haj Amara, Abdesslem; Jaffrezic-Renault, Nicole

    2016-11-01

    Layered double hydroxides (LDHs) have been widely used in the past years due to their unique physicochemical properties and promising applications in electroanalytical chemistry. The present paper is going to focus exclusively on magnesium-aluminum and zinc-aluminum layered double hydroxides (MgAl & ZnAl LDHs) in order to investigate the property and structure of active cation sites located within the layer structure. The MgAl and ZnAl LDH nanosheets were prepared by the constant pH co-precipitation method and uniformly supported on carbon-based electrode materials to fabricate an LDH electrode. Characterization by powder x-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and transmission electron microscopy revealed the LDH form and well-crystallized materials. Wetting surface properties (hydrophilicity and hydrophobicity) of both prepared LDHs were recorded by contact angle measurement show hydrophilic character and basic property. The electrochemical performance of these hybrid materials was investigated by mainly cyclic voltammetry, electrochemical impedance spectroscopy and chronoamperometry techniques to identify the oxidation/reduction processes at the electrode/electrolyte interface and the effect of the divalent metal cations in total reactivity. The hierarchy of the modified electrode proves that the electronic conductivity of the bulk material is considerably dependent on the divalent cation and affects the limiting parameter of the overall redox process. However, MgAl LDH shows better performance than ZnAl LDH, due to the presence of magnesium cations in the layers. Following the structural, morphological and electrochemical behavior studies of both synthesized LDHs, the prepared LDH modified electrodes were tested through microbial fuel cell configuration, revealing a remarkable, potential new pathway for high-performance and cost-effective electrode use in electrochemical power devices.

  2. The AC (Alternating Current) Electrical Behavior of Multi-layered Thermoelectric Devices

    NASA Astrophysics Data System (ADS)

    Alim, Mohammad A.; Budak, Satilmis; Bhattacharjee, Sudip

    2016-08-01

    In this study the ac (alternating current) small-signal electrical data in the frequency range 5 Hz ≤ f ≤ 13 MHz are obtained for the multi-layered thermoelectric (TE) devices to extract underlying operative mechanisms via an equivalent circuit model. This model is developed from the complex plane plots in conjunction with the Bode plot. It is observed that the inductive behavior is prevalent for both unbombarded and bombarded TE devices regardless of the doses as both types are observed as somewhat weak in thermoelectric properties. The bombarded multi-layered devices followed a systematic pattern in ac behavior via semicircular relaxation both in the impedance and admittance planes for the same measured data. This pattern is attributed to the transition from one lumped behavior to two distinct mechanisms. It is observed that the␣conductive nature of the equivalent circuit model via non-blocking (non-capacitive) elements, attributed to the underlying operative electrical paths between the two opposite electrodes across the multi-layered device exists, satisfying direct current conditions of the equivalent circuit model. The inductive behavior at high frequencies originates from the conductive aspect of the lumped response of the device in addition to the contribution of the electrode leads. Thus, the proposed equivalent circuit model contains external inductance that verifies a meaningful representation of the multi-layered TE device, though weak in thermoelectric properties.

  3. The AC (Alternating Current) Electrical Behavior of Multi-layered Thermoelectric Devices

    NASA Astrophysics Data System (ADS)

    Alim, Mohammad A.; Budak, Satilmis; Bhattacharjee, Sudip

    2016-11-01

    In this study the ac (alternating current) small-signal electrical data in the frequency range 5 Hz ≤ f ≤ 13 MHz are obtained for the multi-layered thermoelectric (TE) devices to extract underlying operative mechanisms via an equivalent circuit model. This model is developed from the complex plane plots in conjunction with the Bode plot. It is observed that the inductive behavior is prevalent for both unbombarded and bombarded TE devices regardless of the doses as both types are observed as somewhat weak in thermoelectric properties. The bombarded multi-layered devices followed a systematic pattern in ac behavior via semicircular relaxation both in the impedance and admittance planes for the same measured data. This pattern is attributed to the transition from one lumped behavior to two distinct mechanisms. It is observed that the conductive nature of the equivalent circuit model via non-blocking (non-capacitive) elements, attributed to the underlying operative electrical paths between the two opposite electrodes across the multi-layered device exists, satisfying direct current conditions of the equivalent circuit model. The inductive behavior at high frequencies originates from the conductive aspect of the lumped response of the device in addition to the contribution of the electrode leads. Thus, the proposed equivalent circuit model contains external inductance that verifies a meaningful representation of the multi-layered TE device, though weak in thermoelectric properties.

  4. Electrically Addressable Optical Devices Using A System Of Composite Layered Flakes Suspended In A Fluid Host To Obtain Angularly Depende

    DOEpatents

    Kosc, Tanya Z.; Marshall, Kenneth L.; Jacobs, Stephen D.

    2004-12-07

    Composite or layered flakes having a plurality of layers of different materials, which may be dielectric materials, conductive materials, or liquid crystalline materials suspended in a fluid host and subjected to an electric field, provide optical effects dependent upon the angle or orientation of the flakes in the applied electric field. The optical effects depend upon the composition and thickness of the layers, producing reflectance, interference, additive and/or subtractive color effects. The composition of layered flakes may also be selected to enhance and/or alter the dielectric properties of flakes, whereby flake motion in an electric field is also enhanced and/or altered. The devices are useful as active electro-optical displays, polarizers, filters, light modulators, and wherever controllable polarizing, reflecting and transmissive optical properties are desired.

  5. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  6. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  7. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  8. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  9. 21 CFR 890.5050 - Daily activity assist device.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Daily activity assist device. 890.5050 Section 890.5050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES PHYSICAL MEDICINE DEVICES Physical Medicine Therapeutic Devices § 890.5050 Daily...

  10. Layer-by-layer growth of metal-metal bonded supramolecular thin films and its use in the fabrication of lateral nanoscale devices.

    PubMed

    Lin, Chun; Kagan, Cherie R

    2003-01-15

    Layer-by-layer self-assembly of metal-metal bonded supramolecules is demonstrated and utilized to fabricate lateral nanoelectronic devices. Mercaptoethylpyridine is used to bind to Au substrates and to template the sequential assembly of alternating layers of redox active dirhodium complexes [Rh2(DAniF)2]2(O2CCH2CO2)2 (DAniF = N,N'-di-p-anisylformamidinate) and conjugated organic ligands trans-1,2-bis(4-pyridyl)ethylene. Optical spectroscopy and atomic force microscopy show that the structure and composition of these thin films are similar to those found in tightly packed single crystals. Electrochemical studies of these films grown on Au substrates reveal a reversible oxidation wave at approximately 406 mV, corresponding to the one electron oxidation of the Rh24+ center. This directed assembly technique has been used to fabricate lateral nano-electronic devices in which the supramolecules span the channels. Tailoring the chemistry of the templating ligand enables assembly on desired surfaces and engineering the chemistry of the supramolecules' dimetal units and coordinating ligands may tune the device characteristics.

  11. Some dynamical properties of very strong double layers in a triple plasma device

    NASA Technical Reports Server (NTRS)

    Carpenter, T.; Torven, S.

    1987-01-01

    Dynamical properties of very strong double layers seen in a differentially pumped triple plasma device are reported. These double layers are V-shaped. The following findings are discussed: (1) Disruptions in the double layer potential and in the plasma current occur when an inductance is placed in series with the bias supply between the sources in the external circuit. These disruptions, which can be highly periodic, are the result of a negative resistance region. (2) When reactances in the circuit are minimized, the double layer exhibits a jitter motion in position approximately equal to the double layer thickness. (3) When the bias between the sources is rapidly turned on, the initial phase in the double layer formation is the occurrence of a constant electric field for the first few microseconds. First the apparatus used in all of the work is discussed and then each of the three phenomena are considered.

  12. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    PubMed

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  13. Organic light-emitting device with a phosphor-sensitized fluorescent emission layer

    DOEpatents

    Forrest, Stephen; Kanno, Hiroshi

    2009-08-25

    The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

  14. Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

    SciTech Connect

    Kim, Jong Kyu; Cho, Sung Il; Lee, Sung Ho; Kim, Chan Kyu; Min, Kyung Suk; Kang, Seung Hyun; Yeom, Geun Young

    2013-11-15

    Silicon atomic layer etching (ALET) using Cl{sub 2} is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional damage removal method, such as the low-power CF{sub 4} plasma treatment technique, ALET produces less secondary damage to the substrate and gives exact etch depth control and extremely high etch selectivity to the contact SiO{sub 2} insulating pattern mold. When ALET is applied after a conventional damage removal technique, the sheet resistance of the damaged contact silicon surface is improved to a level close to that of a clean silicon surface, while exact atomic-scale depth control is maintained without changes in the pattern mold profile.

  15. Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

    PubMed

    Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

    2013-10-01

    We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

  16. Multi-layered nanocomposite dielectrics for high density organic memory devices

    NASA Astrophysics Data System (ADS)

    Kang, Moonyeong; Chung, Kyungwha; Baeg, Kang-Jun; Kim, Dong Ha; Kim, Choongik

    2015-01-01

    We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).

  17. Integration of active devices on smart polymers for neural interfaces

    NASA Astrophysics Data System (ADS)

    Avendano-Bolivar, Adrian Emmanuel

    The increasing ability to ever more precisely identify and measure neural interactions and other phenomena in the central and peripheral nervous systems is revolutionizing our understanding of the human body and brain. To facilitate further understanding, more sophisticated neural devices, perhaps using microelectronics processing, must be fabricated. Materials often used in these neural interfaces, while compatible with these fabrication processes, are not optimized for long-term use in the body and are often orders of magnitude stiffer than the tissue with which they interact. Using the smart polymer substrates described in this work, suitability for processing as well as chronic implantation is demonstrated. We explore how to integrate reliable circuitry onto these flexible, biocompatible substrates that can withstand the aggressive environment of the body. To increase the capabilities of these devices beyond individual channel sensing and stimulation, active electronics must also be included onto our systems. In order to add this functionality to these substrates and explore the limits of these devices, we developed a process to fabricate single organic thin film transistors with mobilities up to 0.4 cm2/Vs and threshold voltages close to 0V. A process for fabricating organic light emitting diodes on flexible substrates is also addressed. We have set a foundation and demonstrated initial feasibility for integrating multiple transistors onto thin-film flexible devices to create new applications, such as matrix addressable functionalized electrodes and organic light emitting diodes. A brief description on how to integrate waveguides for their use in optogenetics is addressed. We have built understanding about device constraints on mechanical, electrical and in vivo reliability and how various conditions affect the electronics' lifetime. We use a bi-layer gate dielectric using an inorganic material such as HfO 2 combined with organic Parylene-c. A study of

  18. Stackelberg Game Based Power Allocation for Physical Layer Security of Device-to-device Communication Underlaying Cellular Networks

    NASA Astrophysics Data System (ADS)

    Qu, Junyue; Cai, Yueming; Wu, Dan; Chen, Hualiang

    2014-05-01

    The problem of power allocation for device-to-device (D2D) underlay communication to improve physical layer security is addressed. Specifically, to improve the secure communication of the cellular users, we introduce a Stackelberg game for allocating the power of the D2D link under a total power constraint and a rate constraint at the D2D pair. In the introduced Stackelberg game the D2D pair works as a seller and the cellular UEs work as buyers. Firstly, because the interference signals from D2D pair are unknown to both the legitimate receiver and the illegitimate eavesdropper, it is possible that a cellular UE decline to participate in the introduced Stackelberg game. So the condition under which a legitimate user will participate in the introduced Stackelberg game is discussed. Then, based on the Stackelberg game, we propose a semi-distributed power allocation algorithm, which is proved to conclude after finite-time iterations. In the end, some simulations are presented to verify the performance improvement in the physical layer security of cellular UEs using the proposed power allocation algorithm. We can determine that with the proposed algorithm, while the D2D pair's communication demand is met, the physical layer security of cellular UEs can be improved.

  19. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    SciTech Connect

    Rosikhin, Ahmad Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  20. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    DOEpatents

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  1. High Curie temperature drive layer materials for ion-implanted magnetic bubble devices

    NASA Technical Reports Server (NTRS)

    Fratello, V. J.; Wolfe, R.; Blank, S. L.; Nelson, T. J.

    1984-01-01

    Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.

  2. Relationship Between Absorber Layer Properties and Device Operation Modes For High Efficiency Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Ravichandran, Ram; Kokenyesi, Robert; Wager, John; Keszler, Douglas; CenterInverse Design Team

    2014-03-01

    A thin film solar cell (TFSC) can be differentiated into two distinct operation modes based on the transport mechanism. Current TFSCs predominantly exploit diffusion to extract photogenerated minority carriers. For efficient extraction, the absorber layer requires high carrier mobilities and long minority carrier lifetimes. Materials exhibiting a strong optical absorption onset near the fundamental band gap allows reduction of the absorber layer thickness to significantly less than 1 μm. In such a TFSC, a strong intrinsic electric field drives minority carrier extraction, resulting in drift-based transport. The basic device configuration utilized in this simulation study is a heterojunction TFSC with a p-type absorber layer. The diffusion/drift device operation modes are simulated by varying the thickness and carrier concentration of the absorber layer, and device performance between the two modes is compared. In addition, the relationship between device operation mode and transport properties, including carrier mobility and minority carrier lifetime are explored. Finally, candidate absorber materials that enable the advantages of a drift-based TFSC developed within the Center for Inverse Design are presented. School of Electrical Engineering and Computer Science.

  3. White light organic electroluminescent device using a naphthalimide derivative as the emitter layer

    NASA Astrophysics Data System (ADS)

    Chu, Guoqiang; Liu, Xingyuan; Liu, Yun; Wu, Dongjiang; Wang, Lijun

    2000-11-01

    The electroluminescent (EL) device was fabricated using a naphthalimide derivative, N-Propyl-4-acetylamino-1,8- naphthalimide (PAAN), as the emitter layer, N,N'-diphenyl- N,N'-bis(3-methyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) as the hole transport layer, ITO and Al as the anode and cathode, respectively. The EL emission of the device showed a white light. There are two peaks located at 491 nm and 669 nm in the EL spectrum. The emission peak at 491 nm comes from PAAN, while the emission peak at 669 nm results from neither the emission of PAAN molecule nor that of TPD molecule. It showed that the showing up of the new emission peak in the EL spectrum of the device is due to the exciplex formation at the PAAN and TPD bilayer interface.

  4. Self-healing of cracks in Ag joining layer for die-attachment in power devices

    NASA Astrophysics Data System (ADS)

    Chen, Chuantong; Nagao, Shijo; Suganuma, Katsuaki; Jiu, Jinting; Zhang, Hao; Sugahara, Tohru; Iwashige, Tomohito; Sugiura, Kazuhiko; Tsuruta, Kazuhiro

    2016-08-01

    Sintered silver (Ag) joining has attracted significant interest in power devices modules for its ability to form stable joints with a porous interconnection layer. A function for the self-healing of cracks in sintered porous Ag interlayers at high temperatures is discovered and reported here. A crack which was prepared on a Ag joining layer was closed after heating at 200 °C in air. The tensile strength of pre-cracked Ag joining layer specimens recovers to the value of non-cracked specimens after heating treatment. Transmission electron microscopy (TEM) was used to probe the self-healing mechanism. TEM images and electron diffraction patterns show that a large quantity of Ag nanoparticles formed at the gap with the size less than 10 nm, which bridges the crack in the self-healing process. This discovery provides additional motivation for the application of Ag as an interconnection material for power devices at high temperature.

  5. INSERTION DEVICE ACTIVITIES FOR NSLS-II.

    SciTech Connect

    TANABE,T.; HARDER, D.A.; HULBERT, S.; RAKOWSKI, G.; SKARITKA, J.

    2007-06-25

    National Synchrotron Light Source-II (NSLS-II) will be a medium energy storage ring of 3GeV electron beam energy with sub-nm.rad horizontal emittance and top-off capability at 500mA. Damping wigglers will be used not only to reduce the beam emittance but also used as broadband sources for users. Cryo-Permanent Magnet Undulators (CPMUs) are considered for hard X-ray linear device, and permanent magnet based elliptically polarized undulators (EPUs) for variable polarization devices for soft X-ray. 6T superconducting wiggler with minimal fan angle will be installed in the second phase as well as quasi-periodic EPU for VUV and possibly high-temperature superconducting undulator. R&D plans have been established to pursue the performance enhancement of the baseline devices and to design new types of insertion devices. A new insertion device development laboratory will also be established.

  6. Impact of silicon epitaxial thickness layer in high power diode devices

    NASA Astrophysics Data System (ADS)

    Mee, Cheh Chai; Arshad, M. K. Md.; Hashim, U.; Fathil, M. F. M.

    2016-07-01

    The p-i-n diode is one of the earliest semiconductor devices developed for power circuit application. It is formed with the intrinsically doped i.e. i-layer sandwiched between the p-type and n-type layers. In this paper, we focus on the integration of the intrinsic region of silicon p-i-n diode to the current-voltage characteristics. In our structure, n-type refers to the bulk substrate and intrinsic region refers to the epitaxial layer of the silicon substrate. We make a thickness variation in the intrinsic region of p-i-n diode and how it affects diode performance. An additional layer is added on the epitaxial layer during the process to control the diffusion from the bottom of bulk substrate. Result shows that intrinsic layer optimization has successfully enhances the diode device robustness in terms of diode current-voltage characteristics, which reflects better manufacturing yield and improve the final product performance.

  7. Calcium chloride electron injection/extraction layers in organic electronic devices

    SciTech Connect

    Qu, Bo E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang E-mail: qhgong@pku.edu.cn

    2014-01-27

    Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl{sub 2} was 3.5 V and 21 960 cd/m{sup 2}, respectively. OLED with 1.5 nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

  8. Calcium chloride electron injection/extraction layers in organic electronic devices

    NASA Astrophysics Data System (ADS)

    Qu, Bo; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang

    2014-01-01

    Nontoxic calcium chloride (CaCl2) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5 nm CaCl2 was 3.5 V and 21 960 cd/m2, respectively. OLED with 1.5 nm CaCl2 possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5 nm CaCl2 was comparable to that of the control device with LiF. Therefore, CaCl2 has the potential to be used as the CBL for organic electronic devices.

  9. Cognitive Inference Device for Activity Supervision in the Elderly

    PubMed Central

    2014-01-01

    Human activity, life span, and quality of life are enhanced by innovations in science and technology. Aging individual needs to take advantage of these developments to lead a self-regulated life. However, maintaining a self-regulated life at old age involves a high degree of risk, and the elderly often fail at this goal. Thus, the objective of our study is to investigate the feasibility of implementing a cognitive inference device (CI-device) for effective activity supervision in the elderly. To frame the CI-device, we propose a device design framework along with an inference algorithm and implement the designs through an artificial neural model with different configurations, mapping the CI-device's functions to minimise the device's prediction error. An analysis and discussion are then provided to validate the feasibility of CI-device implementation for activity supervision in the elderly. PMID:25405211

  10. Buffer Layer Effects on Tandem InGaAs TPV Devices

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Wehrer, Rebecca J.; Maurer, William F.

    2004-01-01

    Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of

  11. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    NASA Astrophysics Data System (ADS)

    Hutchinson, David; Mathews, Jay; Sullivan, Joseph T.; Akey, Austin; Aziz, Michael J.; Buonassisi, Tonio; Persans, Peter; Warrender, Jeffrey M.

    2016-05-01

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer's law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  12. Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

    SciTech Connect

    Raghavan, A.; DebRoy, T.; Palmer, T. A.

    2014-07-14

    Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO{sub 2} passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

  13. Multi-sensor fusion for enhanced contextual awareness of everyday activities with ubiquitous devices.

    PubMed

    Guiry, John J; van de Ven, Pepijn; Nelson, John

    2014-03-21

    In this paper, the authors investigate the role that smart devices, including smartphones and smartwatches, can play in identifying activities of daily living. A feasibility study involving N = 10 participants was carried out to evaluate the devices' ability to differentiate between nine everyday activities. The activities examined include walking, running, cycling, standing, sitting, elevator ascents, elevator descents, stair ascents and stair descents. The authors also evaluated the ability of these devices to differentiate indoors from outdoors, with the aim of enhancing contextual awareness. Data from this study was used to train and test five well known machine learning algorithms: C4.5, CART, Naïve Bayes, Multi-Layer Perceptrons and finally Support Vector Machines. Both single and multi-sensor approaches were examined to better understand the role each sensor in the device can play in unobtrusive activity recognition. The authors found overall results to be promising, with some models correctly classifying up to 100% of all instances.

  14. Weak localization and electron-electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (˜T -0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.

  15. Weak localization and electron–electron interactions in few layer black phosphorus devices

    NASA Astrophysics Data System (ADS)

    Shi, Yanmeng; Gillgren, Nathaniel; Espiritu, Timothy; Tran, Son; Yang, Jiawei; Watanabe, Kenji; Taniguchi, Takahashi; Lau, Chun Ning

    2016-09-01

    Few layer phosphorene (FLP) devices are extensively studied due to their unique electronic properties and potential applications on nano-electronics. Here we present magnetotransport studies which reveal electron–electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (∼T ‑0.4). These results establish that the dominant scattering mechanism in FLP is electron–electron interactions.

  16. Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.

    PubMed

    Huang, Yuan; Sutter, Eli; Sadowski, Jerzy T; Cotlet, Mircea; Monti, Oliver L A; Racke, David A; Neupane, Mahesh R; Wickramaratne, Darshana; Lake, Roger K; Parkinson, Bruce A; Sutter, Peter

    2014-10-28

    Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on-off current ratios >10(6), as well as carrier mobilities up to 230 cm(2)/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.

  17. Quantum transport measurement of few-layer WTe2 field effect devices

    NASA Astrophysics Data System (ADS)

    Chen, Jianhao; Liu, Xin; Tian, Shibing; Zhang, Chenglong; Jia, Shuang

    2015-03-01

    We have performed systematic quantum transport measurement on field effect devices fabricated from few-layer WTe2 single crystals. We found that the magnetoresistance of few-layer WTe2 could be very different from that of bulk samples, which may arise from the imbalance of electron and hole carriers in the samples. We shall discuss our findings in more details in light of recent progress in our experiment. This work is supported by National Natural Science Foundation of China (11374021 and 11327406); by China Ministry of Science and Technology under Contract # 2014CB920900 and 2013CB921900; and by the Young 1000-Talent Program of China.

  18. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  19. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

    PubMed Central

    Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, H. N.

    2014-01-01

    Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V−1s−1, large memory window (∼16 V), low read voltages (∼−1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices. PMID:24912617

  20. Dynamics of active layer in wooded palsas of northern Quebec

    NASA Astrophysics Data System (ADS)

    Jean, Mélanie; Payette, Serge

    2014-02-01

    Palsas are organic or mineral soil mounds having a permafrost core. Palsas are widespread in the circumpolar discontinuous permafrost zone. The annual dynamics and evolution of the active layer, which is the uppermost layer over the permafrost table and subjected to the annual freeze-thaw cycle, are influenced by organic layer thickness, snow depth, vegetation type, topography and exposure. This study examines the influence of vegetation types, with an emphasis on forest cover, on active layer dynamics of palsas in the Boniface River watershed (57°45‧ N, 76°00‧ W). In this area, palsas are often colonized by black spruce trees (Picea mariana (Mill.) B.S.P.). Thaw depth and active layer thickness were monitored on 11 wooded or non-wooded mineral and organic palsas in 2009, 2010 and 2011. Snow depth, organic layer thickness, and vegetation types were assessed. The mapping of a palsa covered by various vegetation types and a large range of organic layer thickness were used to identify the factors influencing the spatial patterns of thaw depth and active layer. The active layer was thinner and the thaw rate slower in wooded palsas, whereas it was the opposite in more exposed sites such as forest openings, shrubs and bare ground. Thicker organic layers were associated with thinner active layers and slower thaw rates. Snow depth was not an important factor influencing active layer dynamics. The topography of the mapped palsa was uneven, and the environmental factors such as organic layer, snow depth, and vegetation types were heterogeneously distributed. These factors explain a part of the spatial variation of the active layer. Over the 3-year long study, the area of one studied palsa decreased by 70%. In a context of widespread permafrost decay, increasing our understanding of factors that influence the dynamics of wooded and non-wooded palsas and understanding of the role of vegetation cover will help to define the response of discontinuous permafrost landforms

  1. Cathodoluminescence observation of SiO2 layers in a semiconductor device

    NASA Astrophysics Data System (ADS)

    Koyama, H.

    1980-04-01

    Dispersive cathodoluminescence images from thin films of SiO2 in a Test-Element-Group pattern of a conventional Large Scale Integrated circuit device were observed. Band A (290 nm) and band C (560 nm) of the cathodoluminescence were characteristic of a thermally grown SiO2 covered with chemically vapor-deposited (CVD) SiO2 and may be useful for the study of irradiation induced damages in SiO2. Band B (415 nm) and band D (650 nm) were intense in the surface CVD SiO2 and may provide information on process induced impurities in SiO2 layers. The spatial resolution of a cathodoluminescence image is 2 μm, and it is possible to survey SiO2 layers on a conventional LSI device with this technique.

  2. Activated-Carbon Sorbent With Integral Heat-Transfer Device

    NASA Technical Reports Server (NTRS)

    Jones, Jack A.; Yavrouian, Andre

    1996-01-01

    Prototype adsorption device used, for example, in adsorption heat pump, to store natural gas to power automobile, or to separate components of fluid mixtures. Device includes activated carbon held together by binder and molded into finned heat-transfer device providing rapid heating or cooling to enable rapid adsorption or desorption of fluids. Concepts of design and fabrication of device equally valid for such other highly thermally conductive devices as copper-finned tubes, and for such other high-surface-area sorbents as zeolites or silicates.

  3. Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer.

    PubMed

    Liu, Donghua; Shi, Zhiwen; Zhang, Lianchang; He, Congli; Zhang, Jing; Cheng, Meng; Yang, Rong; Tian, Xuezeng; Bai, Xuedong; Shi, Dongxia; Zhang, Guangyu

    2012-08-01

    Silicon nanowires (SiNWs) are promising building blocks for future electronic devices. In SiNW-based devices, reducing the contact resistance of SiNW-metal as much as possible is critically important. Here we report a simple fabrication approach for SiNW field effect transistors (FETs) with low contact resistances by employing a heavily doped carrier injection layer wrapped around SiNWs at the contact region. Both n- and p-type SiNW-FET devices with carrier injection layers were investigated, the contact resistances were one order smaller than those without carrier injection layers and only contribute less than 14.8% for n-type devices and 11.4% for p-type devices, respectively, to the total resistance. Such low contact resistance guarantees the device characteristics mainly from the channel region of SiNW-based devices.

  4. Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

    SciTech Connect

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Zettl, Alex; Regan, William Raymond

    2015-03-09

    We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.

  5. Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

    NASA Astrophysics Data System (ADS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Regan, William Raymond; Zettl, Alex

    2015-03-01

    We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

  6. Graphene oxide as a promising hole injection layer for MoS₂-based electronic devices.

    PubMed

    Musso, Tiziana; Kumar, Priyank V; Foster, Adam S; Grossman, Jeffrey C

    2014-11-25

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. The TMDC monolayer MoS2 has gained significant attention as a channel material for next-generation transistors. However, while n-type single-layer MoS2 devices can be made with relative ease, fabrication of p-type transistors remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band leading to large p-type Schottky barrier heights (SBH). Here, we propose the utilization of graphene oxide (GO) as an efficient hole injection layer for single-layer MoS2-based electronic and optoelectronic devices. Using first-principles computations, we demonstrate that GO forms a p-type contact with monolayer MoS2, and that the p-type SBH can be made smaller by increasing the oxygen concentration and the fraction of epoxy functional groups in GO. Our analysis shows that this is possible due to the high work function of GO and the relatively weak Fermi-level pinning at the MoS2/GO interfaces compared to traditional MoS2/metal systems (common metals are Ag, Al, Au, Ir, Pd, Pt). The combination of easy-to-fabricate and inexpensive GO with MoS2 could be promising for the development of hybrid all-2D p-type electronic and optoelectronic devices on flexible substrates.

  7. Ultra-rapid prototyping of flexible, multi-layered microfluidic devices via razor writing.

    PubMed

    Cosson, Steffen; Aeberli, Luc G; Brandenberg, Nathalie; Lutolf, Matthias P

    2015-01-01

    The fabrication of microfluidic devices is often still a time-consuming and costly process. Here we introduce a very simple and cheap microfabrication process based on "razor writing", also termed xurography, for the ultra-rapid prototyping of microfluidic devices. Thin poly(dimethylsiloxane) (PDMS) membranes are spin-coated on flexible plastic foil and cut into user-defined shapes with a bench-top cutter plotter. The PDMS membranes can then be assembled into desirable microdevices via plasma bonding. The plastic foil allows manipulation of exceptionally thin (30-300 μm) PDMS layers and can be readily peeled after fabrication. This versatile technique can be used to produce a wide variety of microfluidic device prototypes within just a few hours.

  8. Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.

    PubMed

    Kim, Ki Kang; Hsu, Allen; Jia, Xiaoting; Kim, Soo Min; Shi, Yumeng; Dresselhaus, Mildred; Palacios, Tomas; Kong, Jing

    2012-10-23

    Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is close to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 μm(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer in top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V·s) range) remains the same before and after device integration. PMID:22970651

  9. Hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer

    SciTech Connect

    Kim, Taehee; Choi, Jin Young; Jeon, Jun Hong; Kim, Youn-Su; Kim, Bong-Soo; Lee, Doh-Kwon; Kim, Honggon; Han, Seunghee; Kim, Kyungkon

    2012-10-15

    Highlights: ► This work enhanced power conversion efficiency of the hybrid tandem solar cell from 1.0% to 2.6%. ► The interfacial series resistance of the tandem solar cell was eliminated by inserting ITO layer. ► This work shows the feasibility of the highly efficient hybrid tandem solar cells. -- Abstract: We demonstrate hybrid tandem photovoltaic devices with a transparent conductive interconnecting recombination layer. The series-connected hybrid tandem photovoltaic devices were developed by combining hydrogenated amorphous silicon (a-Si:H) and polymer-based organic photovoltaics (OPVs). In order to enhance the interfacial connection between the subcells, we employed highly transparent and conductive indium tin oxide (ITO) thin layer. By using the ITO interconnecting layer, the power conversion efficiency of the hybrid tandem solar cell was enhanced from 1.0% (V{sub OC} = 1.041 V, J{sub SC} = 2.97 mA/cm{sup 2}, FF = 32.3%) to 2.6% (V{sub OC} = 1.336 V, J{sub SC} = 4.65 mA/cm{sup 2}, FF = 41.98%) due to the eliminated interfacial series resistance.

  10. Improved Power Conversion Efficiency of Inverted Organic Solar Cells by Incorporating Au Nanorods into Active Layer.

    PubMed

    He, Yeyuan; Liu, Chunyu; Li, Jinfeng; Zhang, Xinyuan; Li, Zhiqi; Shen, Liang; Guo, Wenbin; Ruan, Shengping

    2015-07-29

    This Research Article describes a cooperative plasmonic effect on improving the performance of organic solar cells. When Au nanorods(NRs) are incorporated into the active layers, the designed project shows superior enhanced light absorption behavior comparing with control devices, which leads to the realization of organic solar cell with power conversion efficiency of 6.83%, accounting for 18.9% improvement. Further investigations unravel the influence of plasmonic nanostructures on light trapping, exciton generation, dissociation, and charge recombination and transport inside the thin films devices. Moreover, the introduction of high-conductivity Au NRs improves electrical conductivity of the whole device, which contributes to the enhanced fill factor.

  11. Enhancement of effective electromechanical coupling factor by mass loading in layered surface acoustic wave device structures

    NASA Astrophysics Data System (ADS)

    Tang, Gongbin; Han, Tao; Teshigahara, Akihiko; Iwaki, Takao; Hashimoto, Ken-ya

    2016-07-01

    This paper describes a drastic enhancement of the effective coupling factor K\\text{e}2 by mass loading in layered surface acoustic wave (SAW) device structures such as the ScAlN film/Si substrate structure. This phenomenon occurs when the piezoelectric layer exhibits a high acoustic wave velocity. The mass loading decreases the SAW velocity and causes SAW energy confinement close to the top surface where an interdigital transducer is placed. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This K\\text{e}2 enhancement was also found in various combinations of electrode, piezoelectric layer, and/or substrate materials. The existence of this phenomenon was verified experimentally using the ScAlN film/Si substrate structure.

  12. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  13. Device performance and lifetime of polymer:fullerene solar cells with UV-ozone-irradiated hole-collecting buffer layers.

    PubMed

    Lee, Seungsoo; Nam, Sungho; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2011-11-18

    We report the influence of UV-ozone irradiation of the hole-collecting buffer layers on the performance and lifetime of polymer:fullerene solar cells. UV-ozone irradiation was targeted at the surface of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layers by varying the irradiation time up to 600 s. The change of the surface characteristics in the PEDOT:PSS after UV-ozone irradiation was measured by employing optical absorption spectroscopy, photoelectron yield spectroscopy, and contact angle measurements, while Raman and X-ray photoelectron spectroscopy techniques were introduced for more microscopic analysis. Results showed that the UV-ozone irradiation changed the chemical structure/composition of the surface of the PEDOT:PSS layers leading to the gradual increase of ionization potential with irradiation time in the presence of up-and-down variations in the contact angle (polarity). This surface property change was attributed to the formation of oxidative components, as evidenced by XPS and Auger electron images, which affected the sheet resistance of the PEDOT:PSS layers. Interestingly, device performance was slightly improved by short irradiation (up to 10 s), whereas it was gradually decreased by further irradiation. The short-duration illumination test showed that the lifetime of solar cells with the UV-ozone irradiated PEDOT:PSS layer was improved due to the protective role of the oxidative components formed upon UV-ozone irradiation against the attack of sulfonic acid groups in the PEDOT:PSS layer to the active layer.

  14. Device performance and lifetime of polymer:fullerene solar cells with UV-ozone-irradiated hole-collecting buffer layers.

    PubMed

    Lee, Seungsoo; Nam, Sungho; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2011-11-18

    We report the influence of UV-ozone irradiation of the hole-collecting buffer layers on the performance and lifetime of polymer:fullerene solar cells. UV-ozone irradiation was targeted at the surface of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layers by varying the irradiation time up to 600 s. The change of the surface characteristics in the PEDOT:PSS after UV-ozone irradiation was measured by employing optical absorption spectroscopy, photoelectron yield spectroscopy, and contact angle measurements, while Raman and X-ray photoelectron spectroscopy techniques were introduced for more microscopic analysis. Results showed that the UV-ozone irradiation changed the chemical structure/composition of the surface of the PEDOT:PSS layers leading to the gradual increase of ionization potential with irradiation time in the presence of up-and-down variations in the contact angle (polarity). This surface property change was attributed to the formation of oxidative components, as evidenced by XPS and Auger electron images, which affected the sheet resistance of the PEDOT:PSS layers. Interestingly, device performance was slightly improved by short irradiation (up to 10 s), whereas it was gradually decreased by further irradiation. The short-duration illumination test showed that the lifetime of solar cells with the UV-ozone irradiated PEDOT:PSS layer was improved due to the protective role of the oxidative components formed upon UV-ozone irradiation against the attack of sulfonic acid groups in the PEDOT:PSS layer to the active layer. PMID:22038984

  15. Electrochromic devices

    DOEpatents

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  16. Multilayered gold/silica nanoparticulate bilayer devices using layer-by-layer self organisation for flexible bending and pressure sensing applications

    SciTech Connect

    Shah Alam, Md.; Mohammed, Waleed S.; Dutta, Joydeep

    2014-02-17

    A pressure and bending sensor was fabricated using multilayer thin films fabricated on a flexible substrate based on layer-by-layer self-organization of 18 nm gold nanoparticles separated by a dielectric layer of 30 nm silica nanoparticles. 50, 75, and 100 gold-silica bi-layered films were deposited and the device characteristics were studied. A threshold voltage was required for electron conduction which increases from 2.4 V for 50 bi-layers to 3.3 V for 100 bi-layers. Upon bending of the device up to about 52°, the threshold voltage and slope of the I-V curves change linearly. Electrical characterization of the multilayer films was carried out under ambient conditions with different pressures and bending angles in the direct current mode. This study demonstrates that the developed multilayer thin films can be used as pressure as well as bending sensing applications.

  17. Thin-Layer Chromatography: Four Simple Activities for Undergraduate Students.

    ERIC Educational Resources Information Center

    Anwar, Jamil; And Others

    1996-01-01

    Presents activities that can be used to introduce thin-layer chromatography at the undergraduate level in relatively less developed countries and that can be performed with very simple and commonly available apparati in high schools and colleges. Activities include thin-layer chromatography with a test-tube, capillary feeder, burette, and rotating…

  18. Sporadic E-Layers and Meteor Activity

    NASA Astrophysics Data System (ADS)

    Alimov, Obid

    2016-07-01

    In average width it is difficult to explain variety of particularities of the behavior sporadic layer Es ionospheres without attraction long-lived metallic ion of the meteoric origin. Mass spectrometric measurements of ion composition using rockets indicate the presence of metal ions Fe+, Mg+, Si+, Na+, Ca+, K+, Al+ and others in the E-region of the ionosphere. The most common are the ions Fe+, Mg+, Si+, which are primarily concentrated in the narrow sporadic layers of the ionosphere at altitudes of 90-130 km. The entry of meteoric matter into the Earth's atmosphere is a source of meteor atoms (M) and ions (M +) that later, together with wind shear, produce midlatitude sporadic Es layer of the ionosphere. To establish the link between sporadic Es layer and meteoroid streams, we proceeded from the dependence of the ionization coefficient of meteors b on the velocity of meteor particles in different meteoroid streams. We investigated the dependence of the critical frequency f0Es of sporadic E on the particle velocity V of meteor streams and associations. It was established that the average values of f0Es are directly proportional to the velocity V of meteor streams and associations, with the correlation coefficient of 0.53 < R < 0.74. Thus, the critical frequency of the sporadic layer Es increases with the increase of particle velocity V in meteor streams, which indicates the direct influence of meteor particles on ionization of the lower ionosphere and formation of long-lived metal atoms M and ions M+ of meteoric origin.

  19. Effect of Mesostructured Layer upon Crystalline Properties and Device Performance on Perovskite Solar Cells.

    PubMed

    Listorti, Andrea; Juarez-Perez, Emilio J; Frontera, Carlos; Roiati, Vittoria; Garcia-Andrade, Laura; Colella, Silvia; Rizzo, Aurora; Ortiz, Pablo; Mora-Sero, Ivan

    2015-05-01

    One of the most fascinating characteristics of perovskite solar cells (PSCs) is the retrieved obtainment of outstanding photovoltaic (PV) performances withstanding important device configuration variations. Here we have analyzed CH3NH3PbI3-xClx in planar or in mesostructured (MS) configurations, employing both titania and alumina scaffolds, fully infiltrated with perovskite material or presenting an overstanding layer. The use of the MS scaffold induces to the perovskite different structural properties, in terms of grain size, preferential orientation, and unit cell volume, in comparison to the ones of the material grown with no constraints, as we have found out by X-ray diffraction analyses. We have studied the effect of the PSC configuration on photoinduced absorption and time-resolved photoluminescence, complementary techniques that allow studying charge photogeneration and recombination. We have estimated electron diffusion length in the considered configurations observing a decrease when the material is confined in the MS scaffold with respect to a planar architecture. However, the presence of perovskite overlayer allows an overall recovering of long diffusion lengths explaining the record PV performances obtained with a device configuration bearing both the mesostructure and a perovskite overlayer. Our results suggest that performance in devices with perovskite overlayer is mainly ruled by the overlayer, whereas the mesoporous layer influences the contact properties. PMID:26263326

  20. Development of an ab-initio calculation method for 2D layered materials-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Kim, Han Seul; Kim, Yong-Hoon

    We report on the development of a novel first-principles method for the calculation of non-equilibrium nanoscale device operation process. Based on region-dependent Δ self-consistent field method beyond the standard density functional theory (DFT), we will introduce a novel method to describe non-equilibrium situations such as external bias and simultaneous optical excitations. In particular, we will discuss the limitation of conventional method and advantage of our scheme in describing 2D layered materials-based devices operations. Then, we investigate atomistic mechanism of optoelectronic effects from 2D layered materials-based devices and suggest the optimal material and architecture for such devices.

  1. Transport gap in vertical devices made of incommensurately misoriented graphene layers

    NASA Astrophysics Data System (ADS)

    Nguyen, V. Hung; Dollfus, P.

    2016-02-01

    By means of atomistic tight-binding calculations, we investigate the transport properties of vertical devices made of two incommensurately misoriented graphene layers. For a given transport direction (Ox-axis), we define two classes of rotated graphene lattice distinguished by difference in lattice symmetry and, hence, in Brillouin zone. In particular, these two classes correspond to two different cases where the position of their Dirac cones in the k y -axis is determined differently, i.e. Ky\\prime={{K}y}=0 or Ky\\prime=-{{K}y}=2π /3{{L}y} (L y is the periodic length along the Oy axis). As a consequence, in devices made of two layers of different lattice classes, the misalignment of Dirac cones between the left and right graphene sections opens a finite energy-gap of conductance that can reach a few hundreds of meV. We also show that strain engineering can be used to further enlarge the transport gap and to diminish the sensitivity of the gap on the twist angle and on the commensurateness of the layer stack.

  2. Active resonant subwavelength grating devices for high speed spectroscopic sensing

    NASA Astrophysics Data System (ADS)

    Gin, A. V.; Kemme, S. A.; Boye, R. R.; Peters, D. W.; Ihlefeld, J. F.; Briggs, R. D.; Wendt, J. R.; Marshall, L. H.; Carter, T. R.; Samora, S.

    2009-02-01

    In this paper, we describe progress towards a multi-color spectrometer and radiometer based upon an active resonant subwavelength grating (RSG). This active RSG component acts as a tunable high-speed optical filter that allows device miniaturization and ruggedization not realizable using current sensors with conventional bulk optics. Furthermore, the geometrical characteristics of the device allow for inherently high speed operation. Because of the small critical dimensions of the RSG devices, the fabrication of these sensors can prove challenging. However, we utilize the state-of-the-art capabilities at Sandia National Laboratories to realize these subwavelength grating devices. This work also leverages previous work on passive RSG devices with greater than 98% efficiency and ~1nm FWHM. Rigorous coupled wave analysis has been utilized to design RSG devices with PLZT, PMN-PT and BaTiO3 electrooptic thin films on sapphire substrates. The simulated interdigitated electrode configuration achieves field strengths around 3×107 V/m. This translates to an increase in the refractive index of 0.05 with a 40V bias potential resulting in a 90% contrast of the modulated optical signal. We have fabricated several active RSG devices on selected electro-optic materials and we discuss the latest experimental results on these devices with variable electrostatic bias and a tunable wavelength source around 1.5μm. Finally, we present the proposed data acquisition hardware and system integration plans.

  3. Re-active Passive (RAP) Devices for Control of Noise Transmission through a Panel

    NASA Technical Reports Server (NTRS)

    Carneal, James P.; Giovanardi, Marco; Fuller, Chris R.; Palumbo, Daniel L.

    2008-01-01

    Re-Active Passive (RAP) devices have been developed to control low frequency (<1000 Hz) noise transmission through a panel. These devices use a combination of active, re-active, and passive technologies packaged into a single unit to control a broad frequency range utilizing the strength of each technology over its best suited frequency range. The RAP device uses passive constrained layer damping to cover the relatively high frequency range (>200 Hz), reactive distributed vibration absorber) to cover the medium frequency range (75 to 250 Hz), and active control for controlling low frequencies (<200 Hz). The device was applied to control noise transmission through a panel mounted in a transmission loss test facility. Experimental results are presented for the bare panel, and combinations of passive treatment, reactive treatment, and active control. Results indicate that three RAP devices were able to increase the overall broadband (15-1000 Hz) transmission loss by 9.4 dB. These three devices added a total of 285 grams to the panel mass of 6.0 kg, or approximately 5%, not including control electronics.

  4. Quantitative modeling of total ionizing dose reliability effects in device silicon dioxide layers

    NASA Astrophysics Data System (ADS)

    Rowsey, Nicole L.

    The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the main reasons for device failure in integrated circuits, especially devices under high-stress conditions. One high-stress environment of interest is the space environment. All electronics are vulnerable to ionizing radiation; any high-energy particle that passes through an insulating layer will deposit unwanted charge there, causing shifts in device characteristics. Designing electronics for use in space can be a challenge, because much more energetic radiation exits in space than on Earth, as there is no atmosphere in space to collide with, and thereby reduce the energy of, energetic particles. Although oxide charging due to ionizing radiation creates well-known changes in device characteristics, or total ionizing dose effects, it is still poorly-understood exactly how these changes come about. There are many theories that draw upon a large body of both experimental work and, more recently, quantum-mechanical first principles calculations at the molecular level. This work uses FLOODS, a 3D object-oriented device simulator with multi-physics capability, to investigate these theories, by simulating oxide degradation in realistic device geometries, and comparing the subsequent degradation in device characteristics to experimental measurements. The charge trapping and defect-modulated transport models developed and implemented here have resulted in the first quantitative account of the enhanced low-dose-rate sensitivity effect, and are applicable in a comprehensive range of hydrogen environments. Measurements show that devices exposed to ionizing radiation at high dose rates exhibit less degradation that those exposed at low dose rates. Furthermore, the observed trend differs depending on the amount of hydrogen available before, during, and after irradiation. It is therefore important to understand and take into account the effects of dose rate and hydrogen when developing accelerated

  5. Modeling the gain and bandwidth of submicron active layer n+-i-p+ avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Majumder, Kanishka; Das, N. R.

    2012-10-01

    The electron initiated avalanche gain and bandwidth are calculated for thin submicron GaAs n+-i-p+ avalanche photodiode. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering the dead-space effect. In the model, the carriers are identified both by their energy and position in the multiplication region. The excess energy of the carriers above threshold is assumed to be equally distributed among the carriers generated after impact ionization. The gain versus bias and bandwidth versus gain characteristics of the device are also demonstrated for different active layer thicknesses of the APD.

  6. (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

    NASA Technical Reports Server (NTRS)

    Barner, J. B.; Hunt, B. D.; Foote, M. C.

    1995-01-01

    We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

  7. Solid-state, planar photoelectrocatalytic devices using a nanosized TiO2 layer.

    PubMed

    Shang, Jing; Xie, Shaodong; Zhu, Tong; Li, Jia

    2007-11-15

    Solid-state planar photoelectrocatalytic devices using a nanosized Ti02 layer have been fabricated and used in the photodegradation of gaseous formaldehyde (HCHO). It is discovered for the first time that in the photocatalytic degradation of HCHO over TiO2 film, besides a well-known process of exciton dissociation expressed as TiO2* --> e(-) + h+ (process A), there exists an HCHO-involved process of exciton dissociation expressed as TiO2 + HCHO* --> TiO2(-) + HCHO+ (process B); these two processes have comparable contributions to the electron photogeneration. A biased photocatalytic device is unable to photodegrade HCHO under the nitrogen condition, but under the air condition, a positive synergic effect of bias on the photodegradation of HCHO over the planar photoelectrocatalytic device has been observed, mainly attributed to it that the horizontal electric field can displace electrons generated via process B away from their counterparts, effectively suppressing hole-electron recombination on TiO2 surface and thereby leading to the enhanced formation of O2- species. The current research points out that the planar photoelectrocatalytic device can provide the in-depth investigations on the mechanisms of the photocatalytic degradation over nanosized semiconductor oxide films, and also have potential application in decomposing and mineralizing organic gas-phase pollutants. PMID:18075102

  8. Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

    SciTech Connect

    Bardoel, Agatha A; Lauter, Valeria; Szulczewski, Greg J

    2012-01-01

    New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light-emitting diodes, has

  9. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    PubMed Central

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-01-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

  10. Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

    PubMed

    Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  11. Release of multi-layer metal structure in MEMS devices by dry etching technique

    NASA Astrophysics Data System (ADS)

    Das, N. C.

    2002-04-01

    Reactive ion etching technique was used to remove interleave photoresist layer for free standing metal structure in microelectromechanical systems (MEMS) devices. Mixture of oxygen and CF 4 gas was used to get isotropic etching profile. Etching process was optimized to get large metal structure of 100×100 μm 2 without any surface bending. The etching rate of 0.7 μm/min at 60 W of RIE plasma power is found to be optimum process for the particular application. The reported dry release technique is fully compatible with standard silicon IC processing and hence can be used for hybridize process used in MEMS array application.

  12. Delayed electroluminescence of doped fluorescent aingle layer organic light-emitting devices.

    PubMed

    Zhang, Yanfei; Zhao, Suling; Xu, Zheng; Kong, Chao

    2014-05-01

    Doped single-layer polymer OLEDs consisting of PVK: (TPB, C545T, Rubrene or DCJTB) were prepared. By applying high-frequency electric pulse of 0.5 micros pulse width to each device, we observed various delayed electroluminescence after withdrawing the forward bias. The order of magnitude of fitting life time ranges from hundreds of nanoseconds to several milliseconds. Current density-voltage and brightness-voltage characteristics reveals charge trapped on guest sites initially before released. Subsequently, the recombination of these trapped charges is strongly involved in the origin of delayed electroluminescence. PMID:24734573

  13. Top coat less resist process development for contact layer of 40nm node logic devices

    NASA Astrophysics Data System (ADS)

    Fujita, Masafumi; Uchiyama, Takayuki; Furusho, Tetsunari; Otsuka, Takahisa; Tsuchiya, Katsuhiro

    2010-04-01

    ArF immersion lithography has been introduced in mass production of 55nm node devices and beyond as the post ArF dry lithography. Due to the existence of water between the resist film and lens, we have many concerns such as leaching of PAG and quencher from resist film into immersion water, resist film swelling by water, keeping water in the immersion hood to avoid water droplets coming in contact with the wafer, and so on. We have applied to the ArF dry resist process an immersion topcoat (TC) process in order to ensure the hydrophobic property as well as one for protecting the surface. We investigate the TC-less resist process with an aim to improve CoO, the yield and productivity in mass production of immersion lithography. In this paper, we will report TC-less resist process development for the contact layer of 40nm node logic devices. It is important to control the resist surface condition to reduce pattern defects, in particular in the case of the contact layer. We evaluated defectivity and lithography performance of TC-less resist with changing hydrophobicity before and after development. Hydrophobicity of TC-less resist was controlled by changing additives with TC functions introduced into conventional ArF dry resist. However, the hydrophobicity control was not sufficient to reduce the number of Blob defects compared with the TC process. Therefore, we introduced Advanced Defect Reduction (ADR) rinse, which was a new developer rinse technique that is effective against hydrophobic surfaces. We have realized Blob defect reduction by hydrophobicity control and ADR rinse. Furthermore, we will report device performance, yield, and immersion defect data at 40nm node logic devices with TC-less resist process.

  14. Active unjamming of confluent cell layers

    NASA Astrophysics Data System (ADS)

    Marchetti, M. Cristina

    Cell motion inside dense tissues governs many biological processes, including embryonic development and cancer metastasis, and recent experiments suggest that these tissues exhibit collective glassy behavior. Motivated by these observations, we have studied a model of dense tissues that combines self-propelled particle models and vertex models of confluent cell layers. In this model, referred to as self-propelled Voronoi (SPV), cells are described as polygons in a Voronoi tessellation with directed noisy cell motility and interactions governed by a shape energy that incorporates the effects of cell volume incompressibility, contractility and cell-cell adhesion. Using this model, we have demonstrated a new density-independent solid-liquid transition in confluent tissues controlled by cell motility and a cell-shape parameter measuring the interplay of cortical tension and cell-cell adhesion. An important insight of this work is that the rigidity and dynamics of cell layers depends sensitively on cell shape. We have also used the SPV model to test a new method developed by our group to determine cellular forces and tissue stresses from experimentally accessible cell shapes and traction forces, hence providing the spatio-temporal distribution of stresses in motile dense tissues. This work was done with Dapeng Bi, Lisa Manning and Xingbo Yang. MCM was supported by NSF-DMR-1305184 and by the Simons Foundation.

  15. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  16. Development of novel active transport membrande devices

    SciTech Connect

    Laciak, D.V.

    1994-11-01

    Air Products has undertaken a research program to fabricate and evaluate gas separation membranes based upon promising ``active-transport`` (AT) materials recently developed in our laboratories. Active Transport materials are ionic polymers and molten salts which undergo reversible interaction or reaction with ammonia and carbon dioxide. The materials are useful for separating these gases from mixtures with hydrogen. Moreover, AT membranes have the unique property of possessing high permeability towards ammnonia and carbon dioxide but low permeability towards hydrogen and can thus be used to permeate these components from a gas stream while retaining hydrogen at high pressure.

  17. Geometric investigation of a gaming active device

    NASA Astrophysics Data System (ADS)

    Menna, Fabio; Remondino, Fabio; Battisti, Roberto; Nocerino, Erica

    2011-07-01

    3D imaging systems are widely available and used for surveying, modeling and entertainment applications, but clear statements regarding their characteristics, performances and limitations are still missing. The VDI/VDE and the ASTME57 committees are trying to set some standards but the commercial market is not reacting properly. Since many new users are approaching these 3D recording methodologies, clear statements and information clarifying if a package or system satisfies certain requirements before investing are fundamental for those users who are not really familiar with these technologies. Recently small and portable consumer-grade active sensors came on the market, like TOF rangeimaging cameras or low-cost triangulation-based range sensor. A quite interesting active system was produced by PrimeSense and launched on the market thanks to the Microsoft Xbox project with the name of Kinect. The article reports the geometric investigation of the Kinect active sensors, considering its measurement performances, the accuracy of the retrieved range data and the possibility to use it for 3D modeling application.

  18. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    SciTech Connect

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  19. CMOS Imaging Device for Optical Imaging of Biological Activities

    NASA Astrophysics Data System (ADS)

    Shishido, Sanshiro; Oguro, Yasuhiro; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    In this paper, we propose a CMOS image sensor device placed on the brain surface or cerebral sulcus (Fig. 1). The device has a photo detector array where a single optical detector is usually used. The proposed imaging device enables the analysis which reflects a surface blood pattern in the observed area. It is also possible to improve effective sensitivity by image processing and to simplify the measurement system by the CMOS sensor device with on-chip light source. We describe the design details and characterization of proposed device. We also demonstrate detection of hemoglobin oxygenation level with external light source, imaging capability of biological activities, and image processing for sensitivity improvement is also realized.

  20. Correlation between magnetic properties of layered ferromagnetic/dielectric material and tunable microwave device applications

    NASA Astrophysics Data System (ADS)

    Salahun, Erwan; Quéffélec, Patrick; Tanné, Gérard; Adenot, Anne-Lise; Acher, Olivier

    2002-04-01

    Layered dielectric / ferromagnetic materials are extensively explored for microwave applications. Indeed, these materials combine the large saturation magnetization of ferromagnetic material with the low loss of dielectrics. Here, our aim was to integrate a layered ferromagnetic composite in a microwave propagation structure since the main advantage of such a material is the large impedance for one polarization. Thus, in order to predict the transmission response of the device, we carried out an electromagnetic analysis to determine how the field pattern of a microstrip line and the microwave-induced demagnetizing fields disturb the material behavior. We also explored the use of the propagation structure in two dc magnetic field-dependent devices: a tunable band stop filter and a magnetic switch. The stop-band function presented a large tunability of more than 50% with a minimal insertion loss of 3 dB when 250 Oe field was applied. Moreover, a magnetic switch using a dc field perpendicular to the easy axis of the ferromagnetic material was manufactured.

  1. Fluorine effects in new indenofluorenedione derivatives for electron transporting layer in OLED devices.

    PubMed

    Lee, Jaehyun; Kim, Beomjin; Park, Youngil; Kim, Seungho; Park, Jongwook

    2014-08-01

    New three indenofluorenedione derivatives were synthesized and proposed for electron transporting layer (ETL). Three compounds are indeno[1,2-b]fluorene-6,12-dione (IF-dione), 2,8-Difluoro-indeno[1,2-b]fluorene-6,12-dione (Mono-F-lF-dione), and 1,2,3,7,8,9-Hexafluoro-indeno[1,2- b]fluorene-6,12-dione (Tri-F-IF-dione). UV-visible (UV-Vis) absorption of three compounds in THF solution state showed different absorption maximum values as follows: 292, 318 and 334 nm (IF-dione), 289, 314 and 329 nm (Mono-F-IF-dione), 285, 319 and 334 nm (Tri-F-IF-dione). Three compounds were inserted between emitting layer (EML) and cathode electrode as an ETL in OLED device: ITO/2-TNATA (60 nm)/NPB (15 nm)/Alq3 (30 nm)/synthesized compounds (30 nm)/LiF (1 nm)/Al (200 nm). I-V characteristics of three devices were investigated at 20 mA/cm2. Operating voltages of three compounds were 7.06 V (IF-dione), 6.42 V (MonoF-IF-dione), 5.36 V (TriF-IF-dione), respectively.

  2. Microwave photonic bandgap devices with active plasma elements

    NASA Astrophysics Data System (ADS)

    Wang, Benjamin; Colon Quinones, Roberto; Biggs, David; Underwood, Thomas; Lucca Fabris, Andrea; Cappelli, Mark; Stanford Plasma Physics Laboratory Team

    2015-09-01

    A 3-D alumina rod based microwave photonic crystal device with integrated gaseous plasma elements is designed and characterized. Modulation of the plasma density of the active plasma elements is shown to allow for high fidelity modulation of the output signal of the photonic crystal device. Finite difference time domain (FDTD) simulations of the device are presented, and the functional effects of the plasma electron density, plasma collision frequency, and plasma dimensions are studied. Experimental characterization of the transmission of the device shows active tunability through adjustments of plasma parameters, including discharge current and plasma size. Additional photonic crystal structures with integrated plasma elements are explored. Sponsored by the AFSOR MURI and DOD NDSEG.

  3. Perfectly Matched Layers versus discrete transparent boundary conditions in quantum device simulations

    SciTech Connect

    Mennemann, Jan-Frederik Jüngel, Ansgar

    2014-10-15

    Discrete transparent boundary conditions (DTBC) and the Perfectly Matched Layers (PML) method for the realization of open boundary conditions in quantum device simulations are compared, based on the stationary and time-dependent Schrödinger equation. The comparison includes scattering state, wave packet, and transient scattering state simulations in one and two space dimensions. The Schrödinger equation is discretized by a second-order Crank–Nicolson method in case of DTBC. For the discretization with PML, symmetric second-, fourth-, and sixth-order spatial approximations as well as Crank–Nicolson and classical Runge–Kutta time-integration methods are employed. In two space dimensions, a ring-shaped quantum waveguide device is simulated in the stationary and transient regime. As an application, a simulation of the Aharonov–Bohm effect in this device is performed, showing the excitation of bound states localized in the ring region. The numerical experiments show that the results obtained from PML are comparable to those obtained using DTBC, while keeping the high numerical efficiency and flexibility as well as the ease of implementation of the former method. -- Highlights: •In-depth comparison between discrete transparent boundary conditions (DTBC) and PML. •First 2-D transient scattering state simulations using DTBC. •First 2-D transient scattering state simulations of the Aharonov–Bohm effect.

  4. Effects of buffer layer and thermal annealing on the performance of hybrid Cu2S/PVK electrically bistable devices

    NASA Astrophysics Data System (ADS)

    Li, Xu; Lu, Yue; Guan, Li; Li, Jiantao; Wang, Yichao; Dong, Guoyi; Tang, Aiwei; Teng, Feng

    2016-09-01

    Hybrid organic/inorganic electrically bistable devices (EBDs) based on Cu2S/PVK nanocomposites have been fabricated by using a simple spin-coating method. An obvious electrical bistability is observed in the current-voltage (I-V) characteristics of the devices, and the presence of the buffer layer and the annealing process have an important effect on the enhancement of the ON/OFF current ratios. Different electrical conduction mechanisms are responsible for the charge switching of the devices in the presence and absence of the buffer layer.

  5. Activity recognition from video using layered approach

    NASA Astrophysics Data System (ADS)

    McPherson, Charles A.; Irvine, John M.; Young, Mon; Stefanidis, Anthony

    2012-01-01

    The adversary in current threat situations can no longer be identified by what they are, but by what they are doing. This has lead to a large increase in the use of video surveillance systems for security and defense applications. With the quantity of video surveillance at the disposal of organizations responsible for protecting military and civilian lives comes issues regarding the storage and screening the data for events and activities of interest. Activity recognition from video for such applications seeks to develop automated screening of video based upon the recognition of activities of interest rather than merely the presence of specific persons or vehicle classes developed for the Cold War problem of "Find the T72 Tank". This paper explores numerous approaches to activity recognition, all of which examine heuristic, semantic, and syntactic methods based upon tokens derived from the video. The proposed architecture discussed herein uses a multi-level approach that divides the problem into three or more tiers of recognition, each employing different techniques according to their appropriateness to strengths at each tier using heuristics, syntactic recognition, and HMM's of token strings to form higher level interpretations.

  6. A study of the effects of Lebu devices on turbulent boundary layer drag

    NASA Technical Reports Server (NTRS)

    Falco, R. E.

    1983-01-01

    Initial measurements of the changes in local skin friction, velocity profile shape, and turbulence structure which result from the placement of tandem plates parallel to the wall in the outer region of thick turbulent boundary layers were made. Using a tunnel with a .75 m x 1.2 m x 7.3 m test section, which diverged so as to keep the pressure gradient less than 2x1000/ft, on the test wall, a skin friction reduction of approximately 30% was measured at xi/h = 62. This relaxed to a reduction of approximately 16% at xi/h = 124 for h/delta M = .6. The c sub f measurements for both the normal and modified boundary layers were obtained by measuring the slope of the velocity profile within the linear sublayer. Visual results indicated a continued presence of strong large eddy structure downstream of the devices. Local skin friction reduction of 12% at xi/h = 62 was also obtained with the manipulators above the boundary layer at y/delta m = 1.1.

  7. Mesoporous layer-by-layer ordered nanohybrids of layered double hydroxide and layered metal oxide: highly active visible light photocatalysts with improved chemical stability.

    PubMed

    Gunjakar, Jayavant L; Kim, Tae Woo; Kim, Hyo Na; Kim, In Young; Hwang, Seong-Ju

    2011-09-28

    Mesoporous layer-by-layer ordered nanohybrids highly active for visible light-induced O(2) generation are synthesized by self-assembly between oppositely charged 2D nanosheets of Zn-Cr-layered double hydroxide (Zn-Cr-LDH) and layered titanium oxide. The layer-by-layer ordering of two kinds of 2D nanosheets is evidenced by powder X-ray diffraction and cross-sectional high resolution-transmission electron microscopy. Upon the interstratification process, the original in-plane atomic arrangements and electronic structures of the component nanosheets remain intact. The obtained heterolayered nanohybrids show a strong absorption of visible light and a remarkably depressed photoluminescence signal, indicating an effective electronic coupling between the two component nanosheets. The self-assembly between 2D inorganic nanosheets leads to the formation of highly porous stacking structure, whose porosity is controllable by changing the ratio of layered titanate/Zn-Cr-LDH. The resultant heterolayered nanohybrids are fairly active for visible light-induced O(2) generation with a rate of ∼1.18 mmol h(-1) g(-1), which is higher than the O(2) production rate (∼0.67 mmol h(-1) g(-1)) by the pristine Zn-Cr-LDH material, that is, one of the most effective visible light photocatalysts for O(2) production, under the same experimental condition. This result highlights an excellent functionality of the Zn-Cr-LDH-layered titanate nanohybrids as efficient visible light active photocatalysts. Of prime interest is that the chemical stability of the Zn-Cr-LDH is significantly improved upon the hybridization, a result of the protection of the LDH lattice by highly stable titanate layer. The present findings clearly demonstrate that the layer-by-layer-ordered assembly between inorganic 2D nanosheets is quite effective not only in improving the photocatalytic activity of the component semiconductors but also in synthesizing novel porous LDH-based hybrid materials with improved chemical

  8. Sporadic Layer es and Siesmic Activity

    NASA Astrophysics Data System (ADS)

    Alimov, Obid; Blokhin, Alexandr; Kalashnikova, Tatyana

    2016-07-01

    To determine the influence of seismogenic disturbances on the calm state of the iono-sphere and assess the impact of turbulence development in sporadic-E during earthquake prepa-ration period we calculated the variation in the range of semitransparency ∆fES = f0ES - fbES. The study was based primarily on the ionograms obtained by vertical sounding of the ionosphere at Dushanbe at nighttime station from 15 to 29 August 1986. In this time period four successive earthquakes took place, which serves the purpose of this study of the impact of seis-mogenic processes on the intensity of the continuous generation of ionospheric turbulence. Analysis of the results obtained for seismic-ionospheric effects of 1986 earthquakes at station Dushanbe has shown that disturbance of ionospheric parameters during earthquake prepa-ration period displays a pronounced maximum with a duration of t = 1-6 hours. Ionospheric effects associated with the processes of earthquake preparation emerge quite predictably, which verifies seismogenic disturbances in the ionosphere. During the preparation of strong earthquakes, ionograms of vertical sounding produced at station Dushanbe - near the epicenter area - often shown the phenomenon of spreading traces of sporadic Es. It is assumed that the duration of manifestation of seismic ionospheric precursors in Du-shanbe τ = 1 - 6 hours may be associated with deformation processes in the Earth's crust and var-ious faults, as well as dissimilar properties of the environment of the epicentral area. It has been shown that for earthquakes with 4.5 ≤ M ≤ 5.5 1-2 days prior to the event iono-spheric perturbations in the parameters of the sporadic layer Es and an increase in the value of the range of semitransparency Es - ΔfEs were observed, which could lead to turbulence at altitudes of 100-130 km.

  9. Interplay of solvent additive concentration and active layer thickness on the performance of small molecule solar cells.

    PubMed

    Love, John A; Collins, Samuel D; Nagao, Ikuhiro; Mukherjee, Subhrangsu; Ade, Harald; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2014-11-19

    A relationship between solvent additive concentration and active layer thickness in small-molecule solar cells is investigated. Specifically, the additive concentration must scale with the amount of semiconductor material and not as absolute concentration in solution. Devices with a wide range of active layers with thickness up to 200 nm can readily achieve efficiencies close to 6% when the right concentration of additive is used.

  10. Initial experience with implantation of novel dual layer flow-diverter device FRED

    PubMed Central

    Sagan, Leszek; Safranow, Krzysztof; Rać, Monika

    2013-01-01

    Flow-diverting stents can help treat complex and wide-necked cerebral aneurysms. The aim of the study was to evaluate initial experiences related to the safety and effectiveness of eight aneurysms treated with a new dual layer coverage designed flow-diverter device. In 2012 Fred flow-diverter devices were used to treat 8 unruptured wide neck (dome-neck ratio ≤ 1.5) and sidewall aneurysms in 6 patients. All aneurysms were located in the anterior circulation on the internal carotid artery (ICA). In 4 larger aneurysms (> 10 mm) one 3D coil in association with Fred was used to reduce potential incidence of postoperative subarachnoid haemorrhage (SAH). Dual antiplatelet therapy was administered before the procedure and continued for 3 months after it. Clinical parameters, aneurysm features and 3-month follow-up angiograms are presented. All 6 patients with 8 aneurysms were successfully stented with the Fred flow-diverter device and were discharged in generally good condition on dual-antiplatelet therapy. No complications were related to the procedure. In 5 cases digital subtraction angiography (DSA) control examination was performed after 3 months, showing complete occlusion of the aneurysms with patency of the parent artery. In 1 case thrombosis of the Fred occurred but without any clinical consequences because of cross-flow from the other side. Use of the Fred flow-diverter device was efficacious in all 8 treated cerebral aneurysms. The system seems to be promising as a flow diverter with certain characteristics, which allow for easy delivery and implantation. Further clinical evaluation with a larger group of patients is needed. PMID:24130644

  11. Non-volatile memory devices with redox-active diruthenium molecular compound.

    PubMed

    Pookpanratana, S; Zhu, H; Bittle, E G; Natoli, S N; Ren, T; Richter, C A; Li, Q; Hacker, C A

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a 'click' reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The 'click' reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

  12. Non-volatile memory devices with redox-active diruthenium molecular compound

    NASA Astrophysics Data System (ADS)

    Pookpanratana, S.; Zhu, H.; Bittle, E. G.; Natoli, S. N.; Ren, T.; Richter, C. A.; Li, Q.; Hacker, C. A.

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

  13. Fabrication of single electron tunneling devices using layered structures of high- Tc superconducting materials

    NASA Astrophysics Data System (ADS)

    Kim, S.-J.; Yamashita, T.

    2006-10-01

    We have fabricated the submicron structures using high-Tc superconducting materials of Bi2Sr2CuO6+δ (Bi-2201). The stacks of layered structures are made by focused-ion-beam (FIB) etching methods. The fabricated 3D three terminal devices consist of source, drain and gate electrodes on the same chip. A gate electrode is capacitively coupled to a central island between two ultra-small tunnel junctions with in plane area S = 0.25 μm2 in series. Two stacks including an island structure show a Coulomb blockade region of 15 mV at zero gate potential. The effects are not smeared out by thermal fluctuations until temperatures greater than 150 K are reached.

  14. Molecular-scale soft imprint lithography for alignment layers in liquid crystal devices.

    PubMed

    Lin, Rongsheng; Rogers, John A

    2007-06-01

    We describe molecular-scale soft nanoimprint lithographic replication of rubbed polyimide substrates to form alignment layers for liquid crystal devices. Systematic studies of the surface relief morphology of the polyimide and molded structures in three different polymers illustrate good lithographic fidelity down to relief heights of several nanometers, and with some capabilities at the level of approximately 1 nm. Collective results of experiments with several polymer formulations for molds and molded materials and process conditions indicate that this molecular-scale fidelity in replication can be used to produce surfaces that will effectively align liquid crystal molecules. Good electro-optical responses from liquid crystal light modulators that are formed in this manner suggest utility for fundamental studies and potential practical application.

  15. The aerocapacitor: An electrochemical double-layer energy-storage device

    SciTech Connect

    Mayer, S.T.; Pekala, R.W.; Kaschmitter, J.L.

    1997-10-01

    The authors have applied unique types of carbon foams developed at Lawrence Livermore National Laboratory (LLNL) to make an {open_quotes}aerocapacitor{close_quotes}. The aerocapacitor is a high power-density, high energy-density, electrochemical double-layer capacitor which uses carbon aerogels as electrodes. These electrodes possess very high surface area per unit volume and are electrically continuous in both the carbon and electrolyte phase on a 10 nm scale. Aerogel surface areas range from 100 to 700 m{sup 2}/cc (as measured by BET analysis), with bulk densities of 0.3 to 1.0 g/cc. This morphology permits stored energy to be released rapidly, resulting in high power densities (7.5 kW/kg). Materials parameterization has been performed, and device capacitances of several tens of Farads per gram and per cm{sup 3} of aerogel have been achieved.

  16. Research Update: The electronic structure of hybrid perovskite layers and their energetic alignment in devices

    NASA Astrophysics Data System (ADS)

    Olthof, Selina

    2016-09-01

    In recent years, the interest in hybrid organic-inorganic perovskites has increased at a rapid pace due to their tremendous success in the field of thin film solar cells. This area closely ties together fundamental solid state research and device application, as it is necessary to understand the basic material properties to optimize the performances and open up new areas of application. In this regard, the energy levels and their respective alignment with adjacent charge transport layers play a crucial role. Currently, we are lacking a detailed understanding about the electronic structure and are struggling to understand what influences the alignment, how it varies, or how it can be intentionally modified. This research update aims at giving an overview over recent results regarding measurements of the electronic structure of hybrid perovskites using photoelectron spectroscopy to summarize the present status.

  17. Charge generation layers for all-solution processed organic tandem light emitting diodes with regular device architecture

    NASA Astrophysics Data System (ADS)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Colsmann, Alexander

    2015-10-01

    We present multi-photon OLEDs where enhanced light emission was achieved by stacking two OLEDs utilizing a regular device architecture (top cathode) and an intermediate charge carrier generation layer (CGL) for monolithic device interconnection. With respect to future printing processes for organic optoelectronic devices, all functional layers were deposited from solution. The CGL comprises a low-work function zinc oxide layer that was applied from solution under ambient conditions and at moderate processing temperatures and a high-work function interlayer that was realized from various solution processable precursor-based metal oxides, like molybdenum-, vanadium- and tungsten-oxide. Since every injected electron-hole pair generates two photons, the luminance and the current efficiency of the tandem OLED at a given device current are doubled while the power efficiency remains constant. At a given luminance, the lower operating current in the tandem device reduces electrical stress and improves the device life-time. ToF-SIMS, TEM/FIB and EDX analyses provided evidence of a distinct layer sequence without intermixing upon solution deposition.

  18. Brain activity during stepping: a novel MRI-compatible device.

    PubMed

    Hollnagel, Christoph; Brügger, Mike; Vallery, Heike; Wolf, Peter; Dietz, Volker; Kollias, Spyros; Riener, Robert

    2011-09-30

    Little is known about the impact of supraspinal centers on the control of human locomotion. Analyzing brain activity can help to clarify their impact and to improve the effects of locomotor training. A fMRI-compatible pneumatic robotic device is presented that can generate freely programmable, highly repetitive periodic active and passive leg movements comprised by hip, knee, and ankle joint displacements. Forces of up to 400N can be applied to each foot while the subject is lying in a supine position. Magnetic interference of the device with the magnetic field of the scanner is measurable, but does not affect the image quality as obtained by a usual image analysis procedure. In a first experiment, brain activity of one healthy subject was acquired during nine different gait-like movement conditions. Brain activity in the somatosensory and motor function related areas increased more when the subject actively moved the legs than when the legs were passively moved by the device. In almost all conditions, mean head motion could be limited to 2mm within the duration of one fMRI scan by a specifically developed head and trunk fixation system. Based on these results, it is concluded that our device will significantly contribute to a better understanding of human locomotor control and related therapeutic effects in spinal cord injured and stroke patients, and thereby, to improve training approaches. PMID:21827788

  19. MIS Solar Cell Devices Based on a Cu2 O Substrate Utilizing h-BN as an Insulating and Passivating Layer

    NASA Astrophysics Data System (ADS)

    Ergen, Onur; Gibb, Ashley; Vazquez-Mena, Oscar; Regan, Will; Zettl, Alex

    2015-03-01

    We demonstrate Cu2O based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active cuprous oxide (Cu2O) layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date. Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. Kavli Energy Nanosciences Institute at the University of Berkeley, CA, USA.

  20. Release of MEMS devices with hard-baked polyimide sacrificial layer

    NASA Astrophysics Data System (ADS)

    Boroumand Azad, Javaneh; Rezadad, Imen; Nath, Janardan; Smith, Evan; Peale, Robert E.

    2013-03-01

    Removal of polyimides used as sacrificial layer in fabricating MEMS devices can be challenging after hardbaking, which may easily result by the end of multiple-step processing. We consider the specific commercial co-developable polyimide ProLift 100 (Brewer Science). Excessive heat hardens this material, so that during wet release in TMAH based solvents, intact sheets break free from the substrate, move around in the solution, and break delicate structures. On the other hand, dry reactive-ion etching of hard-baked ProLift is so slow, that MEMS structures are damaged from undesirably-prolonged physical bombardment by plasma ions. We found that blanket exposure to ultraviolet light allows rapid dry etch of the ProLift surrounding the desired structures without damaging them. Subsequent removal of ProLift from under the devices can then be safely performed using wet or dry etch. We demonstrate the approach on PECVD-grown silicon-oxide cantilevers of 100 micron × 100 micron area supported 2 microns above the substrate by ~100-micron-long 8-micron-wide oxide arms.

  1. Self-loading and cell culture in one layer microfluidic devices.

    PubMed

    Wang, Li; Ni, Xiao-Fang; Luo, Chun-Xiong; Zhang, Zhi-Ling; Pang, Dai-Wen; Chen, Yong

    2009-06-01

    We report on a simple method for self loading and culture of mammalian cells in microfluidic multi-chambers for high throughput screening. The device was obtained by using one layer soft lithography with polydimethylsiloxane (PDMS) and thermal bonding on a glass slide. Self loading of cell suspension could be possible after degassing of the PDMS device for 30 min. Both cell loading efficiency and cell proliferation behaviors have been analyzed with triangle chambers of different sizes, all connected to the main flow channels with small entrances. We found that the number of cells loaded into the micro-chamber increased with the side length of the triangle, showing well size dependence and that self loading at a single cell level was possible for small chambers. For large chambers, the cell area density after loading and proliferation is however quite heterogeneous. For demonstration, HeLa cell growth behavior has been followed for 11 days until the total area of the largest chambers was fully filled.

  2. Superconducting electromechanical rotating device having a liquid-cooled, potted, one layer stator winding

    DOEpatents

    Dombrovski, Viatcheslav V.; Driscoll, David I.; Shovkhet, Boris A.

    2001-01-01

    A superconducting electromechanical rotating (SER) device, such as a synchronous AC motor, includes a superconducting field winding and a one-layer stator winding that may be water-cooled. The stator winding is potted to a support such as the inner radial surface of a support structure and, accordingly, lacks hangers or other mechanical fasteners that otherwise would complicate stator assembly and require the provision of an unnecessarily large gap between adjacent stator coil sections. The one-layer winding topology, resulting in the number of coils being equal to half the number of slots or other mounting locations on the support structure, allows one to minimize or eliminate the gap between the inner radial ends of adjacent straight sections of the stator coilswhile maintaining the gap between the coil knuckles equal to at least the coil width, providing sufficient room for electrical and cooling element configurations and connections. The stator winding may be potted to the support structure or other support, for example, by a one-step VPI process relying on saturation of an absorbent material to fill large gaps in the stator winding or by a two-step process in which small gaps are first filled via a VPI or similar operation and larger gaps are then filled via an operation that utilizes the stator as a portion of an on-site mold.

  3. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

    SciTech Connect

    Entani, Shiro Naramoto, Hiroshi; Sakai, Seiji

    2015-05-07

    Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

  4. Multi-Sensor Fusion for Enhanced Contextual Awareness of Everyday Activities with Ubiquitous Devices

    PubMed Central

    Guiry, John J.; van de Ven, Pepijn; Nelson, John

    2014-01-01

    In this paper, the authors investigate the role that smart devices, including smartphones and smartwatches, can play in identifying activities of daily living. A feasibility study involving N = 10 participants was carried out to evaluate the devices' ability to differentiate between nine everyday activities. The activities examined include walking, running, cycling, standing, sitting, elevator ascents, elevator descents, stair ascents and stair descents. The authors also evaluated the ability of these devices to differentiate indoors from outdoors, with the aim of enhancing contextual awareness. Data from this study was used to train and test five well known machine learning algorithms: C4.5, CART, Naïve Bayes, Multi-Layer Perceptrons and finally Support Vector Machines. Both single and multi-sensor approaches were examined to better understand the role each sensor in the device can play in unobtrusive activity recognition. The authors found overall results to be promising, with some models correctly classifying up to 100% of all instances. PMID:24662406

  5. Active flow control of subsonic flow in an adverse pressure gradient using synthetic jets and passive micro flow control devices

    NASA Astrophysics Data System (ADS)

    Denn, Michael E.

    Several recent studies have shown the advantages of active and/or passive flow control devices for boundary layer flow modification. Many current and future proposed air vehicles have very short or offset diffusers in order to save vehicle weight and create more optimal vehicle/engine integration. Such short coupled diffusers generally result in boundary layer separation and loss of pressure recovery which reduces engine performance and in some cases may cause engine stall. Deployment of flow control devices can alleviate this problem to a large extent; however, almost all active flow control devices have some energy penalty associated with their inclusion. One potential low penalty approach for enhancing the diffuser performance is to combine the passive flow control elements such as micro-ramps with active flow control devices such as synthetic jets to achieve higher control authority. The goal of this dissertation is twofold. The first objective is to assess the ability of CFD with URANS turbulence models to accurately capture the effects of the synthetic jets and micro-ramps on boundary layer flow. This is accomplished by performing numerical simulations replicating several experimental test cases conducted at Georgia Institute of Technology under the NASA funded Inlet Flow Control and Prediction Technologies Program, and comparing the simulation results with experimental data. The second objective is to run an expanded CFD matrix of numerical simulations by varying various geometric and other flow control parameters of micro-ramps and synthetic jets to determine how passive and active control devices interact with each other in increasing and/or decreasing the control authority and determine their influence on modification of boundary layer flow. The boundary layer shape factor is used as a figure of merit for determining the boundary layer flow quality/modification and its tendency towards separation. It is found by a large number of numerical experiments and

  6. Temperature-activated layer-breathing vibrations in few-layer graphene.

    PubMed

    Lui, Chun Hung; Ye, Zhipeng; Keiser, Courtney; Xiao, Xun; He, Rui

    2014-08-13

    We investigated the low-frequency Raman spectra of freestanding few-layer graphene (FLG) at varying temperatures (400-900 K) controlled by laser heating. At high temperature, we observed the fundamental Raman mode for the lowest-frequency branch of rigid-plane layer-breathing mode (LBM) vibration. The mode frequency redshifts dramatically from 81 cm(-1) for bilayer to 23 cm(-1) for 8-layer. The thickness dependence is well described by a simple model of coupled oscillators. Notably, the LBM Raman response is unobservable at room temperature, and it is turned on at higher temperature (>600 K) with a steep increase of Raman intensity. The observation suggests that the LBM vibration is strongly suppressed by molecules adsorbed on the graphene surface but is activated as desorption occurs at high temperature.

  7. Methyl blue dyed polyethylene oxide films: Optical and electrochemical characterization and application as a single layer organic device

    NASA Astrophysics Data System (ADS)

    Kamath, Archana; Raghu, S.; Devendrappa, H.

    2016-01-01

    A single layer organic device employing methyl blue (MB) dyed polyethylene oxide (PEO) film has been fabricated and studied. The cyclic voltammetry was used to estimate the redox potential and energy band diagram of the device. The polymer film with highest concentration of the dye in PEO (PMB2%) possessing highest conductivity exhibited energy band gap of 2.62 eV with HOMO and LUMO values of 5.34 and 2.72 eV respectively. Based on cyclic voltammetry data, the electron affinity, ionization potential and energy band diagram of the device are discussed.

  8. Passive and active control of boundary layer transition

    NASA Astrophysics Data System (ADS)

    Nosenchuck, Daniel Mark

    It is well known that laminar-turbulent boundary layer transition is initiated by the formation of Tollmien-Schlichting laminar instability waves. The amplification rates of these waves are strongly dependent on the shape of the boundary layer velocity profile. Consequently, the transition process can be controlled by modifying the velocity profile. This can be accomplished by controlling the pressure gradient (dp/dx), using boundary layer suction, installing surface roughness elements, or by surface heating or cooling. Methods used to modify the transition process through changes in the mean velocity profile are called "passive" in this paper. There exists a large set of experiments and theory on the application of passive methods for boundary layer control. In the present work only surface heating will be addressed.Transition measurements were made on a heated flat plate in water. Results are presented for several plate wall temperature distributions. An increase by a factor of 2.5 in transition Reynolds number was observed for a 5°C isothermal wall overheat. Buoyancy effects on transition were minimal due to the small Richardson and Grashof numbers encountered in the experiments.The amplification of laminar instability waves is comparatively to process, taking place over many boundary layer thicknesses. After the slow amplification of the laminar instability waves, transition occurs by a strong three dimensional dynamic instability. It appears possible to attenuate (or reinforce) the instability waves by introducing amplitude-and phase-controlled perturbations into the laminar boundary layer using feedback control system. This method is called "active" control and forms the larger part of the research reported in this thesis.A combination of sensors, activators and feedback control electronics is required for active control. The sensors used in the experiments are flush-mounted hot film wall shear robes. A new type of activator was developed using thin, flush

  9. Numerical simulation of current-free double layers created in a helicon plasma device

    SciTech Connect

    Rao, Sathyanarayan; Singh, Nagendra

    2012-09-15

    Two-dimensional simulations reveal that when radially confined source plasma with magnetized electrons and unmagnetized ions expands into diverging magnetic field B, a current-free double layer (CFDL) embedded in a conical density structure forms, as experimentally measured in the Australian helicon plasma device (HPD). The magnetized electrons follow the diverging B while the unmagnetized ions tend to flow directly downstream of the source, resulting in a radial electric field (E{sub Up-Tack }) structure, which couples the ion and electron flows. Ions are transversely (radially) accelerated by E{sub Up-Tack} on the high potential side of the double layer in the CFDL. The accelerated ions are trapped near the conical surface, where E{sub Up-Tack} reverses direction. The potential structure of the CFDL is U-shaped and the plasma density is enhanced on the conical surface. The plasma density is severely depleted downstream of the parallel potential drop ({phi}{sub Double-Vertical-Line Double-Vertical-Line o}) in the CFDL; the density depletion and the potential drop are related by quasi-neutrality condition, including the divergence in the magnetic field and in the plasma flow in the conical structure. The potential and density structures, the CFDL spatial size, its electric field strengths and the electron and ion velocities and energy distributions in the CFDL are found to be in good agreements with those measured in the Australian experiment. The applicability of our results to measured axial potential profiles in magnetic nozzle experiments in HPDs is discussed.

  10. Estimating Active Layer Thickness from Remotely Sensed Surface Deformation

    NASA Astrophysics Data System (ADS)

    Liu, L.; Schaefer, K. M.; Zhang, T.; Wahr, J. M.

    2010-12-01

    We estimate active layer thickness (ALT) from remotely sensed surface subsidence during thawing seasons derived from interferometric synthetic aperture radar (InSAR) measurements. Ground ice takes up more volume than ground water, so as the soil thaws in summer and the active layer deepens, the ground subsides. The volume of melted ground water during the summer thaw determines seasonal subsidence. ALT is defined as the maximum thaw depth at the end of a thawing season. By using InSAR to measure surface subsidence between the start and end of summer season, one can estimate the depth of thaw over a large area (typically 100 km by 100 km). We developed an ALT retrieval algorithm integrating InSAR-derived surface subsidence, observed soil texture, organic matter content, and moisture content. We validated this algorithm in the continuous permafrost area on the North Slope of Alaska. Based on InSAR measurements using ERS-1/2 SAR data, our estimated values match in situ measurements of ALT within 1--10 cm at Circumpolar Active Layer Monitoring (CALM) sites within the study area. The active layer plays a key role in land surface processes in cold regions. Current measurements of ALT using mechanical probing, frost/thaw tubes, or inferred from temperature measurements are of high quality, but limited in spatial coverage. Using InSAR to estimate ALT greatly expands the spatial coverage of ALT observations.

  11. Driving voltage reduction in white organic light-emitting devices from selectively doping in ambipolar blue-emitting layer

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Hung; Lin, Chi-Feng; Lee, Jiun-Haw

    2007-11-01

    White organic light-emitting devices (OLEDs) consisting of ambipolar 9,10-bis(2'-naphthyl) anthracene (ADN) as a host of blue-emitting layer (EML) were investigated. A thin codoped layer of yellow 5,6,11,12-Tetraphenylnaphthacene (rubrene) served as a probe for detecting the position of maximum recombination rate in the 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) doped-ADN EML. Due to the energy barrier and bipolar carrier transport, the maximum recombination rate was found to be close to but not exactly at the interface of the hole-transporting layer and the EML. With appropriate tuning in the thickness, position, and dopant concentrations of the codoped layer (rubrene:DPAVBi:ADN) in the EML, the device driving voltage decreased by 21.7%, nearly 2 V in reduction, due to the increased recombination current from the faster exciton relaxation induced by the yellow dopants. Among the advantages of introducing the codoped layer over conventional single-doped layers are the elimination of the trapping effect to avoid increasing the device driving voltage, the alleviation of the dependence of the recombination zone on the applied voltage for improving color stability, and the utilization of excitons in a more efficient way to enhance device efficiency. Without using any electrically conductive layers such as the p-i-n structure, we were able to successfully generate 112 cd/m2 at 4 V from our white OLED simply by engineering the structure of the EML.

  12. Improved performance of polymer solar cells using PBDTT-F-TT:PC71BM blend film as active layer

    NASA Astrophysics Data System (ADS)

    Zang, Yue; Gao, Xiumin; Lu, Xinmiao; Xin, Qing; Lin, Jun; Zhao, Jufeng

    2016-07-01

    A detailed study of high-efficiency polymer solar cells (PSCs) based on a low bandgap polymer PBDTT-F-TT and PC71BM as the bulk heterojunction (BHJ) layer is carried out. By using 1,8-diiodooctane (DIO) as solvent additive to control the morphology of active layer and comparing different device architecture to optimize the optical field distribution, the power conversion efficiency (PCE) of the resulted devices can be reached as high as 9.34%. Comprehensive characterization and optical modeling of the resulting devices is performed to understand the effect of DIO and device geometry on photovoltaic performance. It was found that the addition of DIO can significantly improve the nanoscale morphology and increased electron mobility in the BHJ layer. The inverted device architecture was chosen because the results from optical modeling shows that it offers better optical field distribution and exciton generation profile. Based on these results, a low-temperature processed ZnO was finally introduced as an electron transport layer to facility the fabrication on flexible substrates and showed comparable performance with the device based on conventional ZnO interlayer prepared by sol-gel process.

  13. Wrinkled substrate and Indium Tin Oxide-free transparent electrode making organic solar cells thinner in active layer

    NASA Astrophysics Data System (ADS)

    Liu, Kong; Lu, Shudi; Yue, Shizhong; Ren, Kuankuan; Azam, Muhammad; Tan, Furui; Wang, Zhijie; Qu, Shengchun; Wang, Zhanguo

    2016-11-01

    To enable organic solar cells with a competent charge transport efficiency, reducing the thickness of active layer without sacrificing light absorption efficiency turns out to be of high feasibility. Herein, organic solar cells on wrinkled metal surface are designed. The purposely wrinkled Al/Au film with a smooth surface provides a unique scaffold for constructing thin organic photovoltaic devices by avoiding pinholes and defects around sharp edges in conventional nanostructures. The corresponding surface light trapping effect enables the thin active layer (PTB7-Th:PC71BM) with a high absorption efficiency. With the innovative MoO3/Ag/ZnS film as the top transparent electrode, the resulting Indium Tin Oxide-free wrinkled devices show a power conversion efficiency as 7.57% (50 nm active layer), higher than the planner counterparts. Thus, this paper provides a new methodology to improve the performance of organic solar cells by balancing the mutual restraint factors to a high level.

  14. Flame-powered trigger device for activating explosion suppression barrier

    SciTech Connect

    Cortese, R.A.; Sapko, M.J.

    1991-01-01

    This paper reports that the U.S. Bureau of Mines has developed a flame-radiation-powered trigger device to explosively activate suppression barriers to quench gas and coal dust explosions. The major component of the device is a silicon solar panel, which concerts radiation from the developing explosion into electrical energy to initiate an electric detonator, which releases an extinguishing agent into the advancing flame front. Solar panels that are rated to produce 20 W of electrical power when exposed to the sunlight are producing about 200 W when exposed to a full-scale dust explosion. The solar panel is electrically isolated from the detonator by a pressure-sensitive switch until the arrival of the precursor pressure pulse, which always precedes a deflagration. This combination of pressure arming and flame-powered photogenerator prevents false barrier activation and requires no external power supply.

  15. Multi-band terahertz active device with complementary metamaterial

    SciTech Connect

    Qiao, Shen; Zhang, Yaxin Sun, Linlin; Sun, Han; Xu, Gaiqi; Zhao, Yuncheng; Yang, Ziqiang; Liang, Shixiong

    2015-09-28

    We describe a multi-band terahertz-active device using a composite structure made of complementary metamaterial and doped silicon that can be dynamically controlled. This special complementary metamaterial exhibits three resonances that produce three pass-bands. The pass-bands can be uniformly manipulated by exploiting the photoinduced characteristics of the doped silicon. Simulations were performed to analyze the magnetic field and surface current distributions. The simulation results agree well with experimental results obtained from terahertz time-domain spectroscopy. Using an 808-nm-wavelength laser beam, a modulation depth of up to 80% was obtained. In numerical simulations, we used a conductivity mode to characterize photoinduction. The development of multi-band terahertz-active devices has many potential applications, for example, in filters, modulators, switches, and sensors.

  16. Toward Efficient Thick Active PTB7 Photovoltaic Layers Using Diphenyl Ether as a Solvent Additive.

    PubMed

    Zheng, Yifan; Goh, Tenghooi; Fan, Pu; Shi, Wei; Yu, Junsheng; Taylor, André D

    2016-06-22

    The development of thick organic photovoltaics (OPV) could increase absorption in the active layer and ease manufacturing constraints in large-scale solar panel production. However, the efficiencies of most low-bandgap OPVs decrease substantially when the active layers exceed ∼100 nm in thickness (because of low crystallinity and a short exciton diffusion length). Herein, we report the use of solvent additive diphenyl ether (DPE) that facilitates the fabrication of thick (180 nm) active layers and triples the power conversion efficiency (PCE) of conventional thienothiophene-co-benzodithiophene polymer (PTB7)-based OPVs from 1.75 to 6.19%. These results demonstrate a PCE 20% higher than those of conventional (PTB7)-based OPV devices using 1,8-diiodooctane. Morphology studies reveal that DPE promotes the formation of nanofibrillar networks and ordered packing of PTB7 in the active layer that facilitate charge transport over longer distances. We further demonstrate that DPE improves the fill factor and photocurrent collection by enhancing the overall optical absorption, reducing the series resistance, and suppressing bimolecular recombination.

  17. Toward Efficient Thick Active PTB7 Photovoltaic Layers Using Diphenyl Ether as a Solvent Additive.

    PubMed

    Zheng, Yifan; Goh, Tenghooi; Fan, Pu; Shi, Wei; Yu, Junsheng; Taylor, André D

    2016-06-22

    The development of thick organic photovoltaics (OPV) could increase absorption in the active layer and ease manufacturing constraints in large-scale solar panel production. However, the efficiencies of most low-bandgap OPVs decrease substantially when the active layers exceed ∼100 nm in thickness (because of low crystallinity and a short exciton diffusion length). Herein, we report the use of solvent additive diphenyl ether (DPE) that facilitates the fabrication of thick (180 nm) active layers and triples the power conversion efficiency (PCE) of conventional thienothiophene-co-benzodithiophene polymer (PTB7)-based OPVs from 1.75 to 6.19%. These results demonstrate a PCE 20% higher than those of conventional (PTB7)-based OPV devices using 1,8-diiodooctane. Morphology studies reveal that DPE promotes the formation of nanofibrillar networks and ordered packing of PTB7 in the active layer that facilitate charge transport over longer distances. We further demonstrate that DPE improves the fill factor and photocurrent collection by enhancing the overall optical absorption, reducing the series resistance, and suppressing bimolecular recombination. PMID:27253271

  18. A dedicated compression device for high resolution X-ray tomography of compressed gas diffusion layers

    SciTech Connect

    Tötzke, C.; Manke, I.; Banhart, J.; Gaiselmann, G.; Schmidt, V.; Bohner, J.; Müller, B. R.; Kupsch, A.; Hentschel, M. P.; Lehnert, W.

    2015-04-15

    We present an experimental approach to study the three-dimensional microstructure of gas diffusion layer (GDL) materials under realistic compression conditions. A dedicated compression device was designed that allows for synchrotron-tomographic investigation of circular samples under well-defined compression conditions. The tomographic data provide the experimental basis for stochastic modeling of nonwoven GDL materials. A plain compression tool is used to study the fiber courses in the material at different compression stages. Transport relevant geometrical parameters, such as porosity, pore size, and tortuosity distributions, are exemplarily evaluated for a GDL sample in the uncompressed state and for a compression of 30 vol.%. To mimic the geometry of the flow-field, we employed a compression punch with an integrated channel-rib-profile. It turned out that the GDL material is homogeneously compressed under the ribs, however, much less compressed underneath the channel. GDL fibers extend far into the channel volume where they might interfere with the convective gas transport and the removal of liquid water from the cell.

  19. Flat YBa 2Cu 3O 7- x layers for planar tunnel-device technology

    NASA Astrophysics Data System (ADS)

    Klemenz, C.; Scheel, H. J.

    1996-02-01

    The conditions for achieving extremely flat YBa 2Cu 3O 7- x (YBCO) surfaces with large interstep distances as required for a reliable planar HTSC tunnel-device technology are analyzed. Considerations of thermodynamics, kinetics and transport of the growth species show that by liquid phase epitaxy (LPE) it is possible to achieve such flat YBCO surfaces, which is experimentally proven. Specifically, in LPE the growth from relatively concentrated solutions occurs at high temperatures near thermodynamic equilibrium. The small supersaturation (of < 0.17°C) required for obtaining step distances of more than 10 μm has been calculated by using the heat of solution from the measured solubility curve and the theoretical treatment of the experimental sufface features. Jackson's α factors (roughness parameter) are derived for a- and c-oriented YBCO films and explain the different degree of polygonization of the observed growth spirals. The concentrations of YBCO in physical vapour deposition (PVD) and in metal-organic chemical vapour deposition (MOCVD) are very small and the supersaturations at least 10 2 times higher than in LPE. This, together with the thermodynamic stability limit (temperature, oxygen partial pressure), sets an inherent limit to the interstep distance in PVD and MOCVD, thus limiting the achievable flatness of vapour-grown YBCO layers.

  20. Simulation of the scrape-off layer region of tokamak devices

    NASA Astrophysics Data System (ADS)

    Ricci, Paolo

    2015-04-01

    Understanding the key processes occurring in the tokamak scrape-off layer (SOL) is becoming of the outmost importance while we enter the ITER era and we move towards the conception of future fusion reactors. By controlling the heat exhaust, by playing an important role in determining the overall plasma confinement, and by regulating the impurity level in tokamak core, the dynamics of the fusion fuel in the SOL is, in fact, related to some of the most crucial issues that the fusion program is facing today. Because of the limited diagnostic access and in view of predicting the SOL dynamics in future devices, simulations are becoming crucial to address the physics of this region. The present paper, which summarizes the lecture on SOL simulations that was given during the 7th ITER international school (August 25-29, 2014, Aix-en-Provence, France), provides a brief overview of the simulation approaches to the SOL dynamics. First, disentangling the complexity of the system, the key physics processes occurring in the SOL are described. Then, the different simulation approaches to the SOL dynamics are presented, from first-principles kinetic and fluid models, to the phenomenological analysis.

  1. Thermal properties measurement of dry bulk materials with a cylindrical three layers device

    NASA Astrophysics Data System (ADS)

    Jannot, Y.; Degiovanni, A.

    2013-09-01

    This paper presents a new method dedicated to thermal properties (conductivity and diffusivity) measurement of dry bulk materials including powders. The cylindrical three layers experimental device (brass/bulk material/stainless steel) and the principle of the measurement method based on a crenel thermal excitation are presented. The one-dimensional modeling of the system is used for a sensitivity analysis and to calculate the standard deviation of the estimation error. Experimental measurements are carried out on three bulk materials: glass beads, cork granules, and expanded polystyrene beads. The estimated thermal properties are compared with the values obtained by other measurement methods. Results are in good agreement with theoretical predictions: both thermal conductivity and diffusivity can be estimated with a good accuracy for low density material like cork granules or expanded polystyrene beads since only thermal diffusivity can be estimated for heavier materials like glass beads. It is finally shown that this method like all transient methods is not suited to the thermal characterization of wet bulk materials.

  2. Expandable device type III for easy and reliable approximation of dissection layers in sutureless aortic anastomosis. Ex vivo experimental study.

    PubMed

    Nazari, Stefano

    2010-02-01

    In past years, we developed expandable devices (type I and II) for sutureless aortic anastomosis. We have now further modified the device (type III) incorporating a second expandable ring, external to the main one, which can be operated contrariwise in such a way that the aortic wall (i.e. the dissection layers) is compressed between the two expandable rings, providing full control on both the layers compression pressure and the anastomosis final diameter. The device was evaluated in ex vivo experimental models of swine aortic arch fresh samples; air-tight sealing at increasing endovascular pressures was also evaluated and compared with sealing achieved by standard suturing. Ex vivo data suggest that the present version of the device can be used easily and quickly also in elliptical, asymmetric 'oblique' anastomosis as when concavity arch is involved. Perfect air-tight sealing of the anastomosis was verified at endovascular pressures up to 150 mmHg, while standard suture cannot withstand even minimal endovascular air pressure. Compared to the previous versions, the present device is less bulky and softer, can be used also for concavity arch resection and provides full and standardizable control on dissection layers stable and sealed approximation. PMID:19933306

  3. Active microwave remote sensing of an anisotropic random medium layer

    NASA Technical Reports Server (NTRS)

    Lee, J. K.; Kong, J. A.

    1985-01-01

    A two-layer anisotropic random medium model has been developed to study the active remote sensing of the earth. The dyadic Green's function for a two-layer anisotropic medium is developed and used in conjunction with the first-order Born approximation to calculate the backscattering coefficients. It is shown that strong cross-polarization occurs in the single scattering process and is indispensable in the interpretation of radar measurements of sea ice at different frequencies, polarizations, and viewing angles. The effects of anisotropy on the angular responses of backscattering coefficients are also illustrated.

  4. Wireless device for activation of an underground shock wave absorber

    NASA Astrophysics Data System (ADS)

    Chikhradze, M.; Akhvlediani, I.; Bochorishvili, N.; Mataradze, E.

    2011-10-01

    The paper describes the mechanism and design of the wireless device for activation of energy absorber for localization of blast energy in underground openings. The statistics shows that the greatest share of accidents with fatal results associate with explosions in coal mines due to aero-methane and/or air-coal media explosion. The other significant problem is terrorist or accidental explosions in underground structures. At present there are different protective systems to reduce the blast energy. One of the main parts of protective Systems is blast Identification and Registration Module. The works conducted at G. Tsulukidze Mining Institute of Georgia enabled to construct the wireless system of explosion detection and mitigation of shock waves. The system is based on the constant control on overpressure. The experimental research continues to fulfill the system based on both threats, on the constant control on overpressure and flame parameters, especially in underground structures and coal mines. Reaching the threshold value of any of those parameters, the system immediately starts the activation. The absorber contains a pyrotechnic device ensuring the discharge of dispersed water. The operational parameters of wireless device and activation mechanisms of pyrotechnic element of shock wave absorber are discussed in the paper.

  5. Threshold improvement in uniformly lying helix cholesteric liquid crystal laser using auxiliary π-conjugated polymer active layer

    NASA Astrophysics Data System (ADS)

    Yoshida, Hiroyuki; Shiozaki, Yusuke; Inoue, Yo; Takahashi, Masaya; Ogawa, Yasuhiro; Fujii, Akihiko; Ozaki, Masanori

    2013-05-01

    We propose a device structure to lower the lasing threshold of a uniformly lying helix cholesteric liquid crystal (ChLC) laser. We place a π-conjugated polymer active layer beneath the ChLC layer to provide auxiliary gain, and demonstrate an improvement in the lasing threshold by a factor of 2.3. We also perform finite difference time domain calculations coupled with rate equations for a four-level system, and clarify the effect of the additional active layer on both the photonic density of states and the inversion population density. Although the addition of an extra layer lowers the photonic density of states, the gain provided by the auxiliary layer is sufficient to overcome the losses and decrease the lasing threshold. Our concept is useful for obtaining high-performance ChLC lasers.

  6. Design of Bicontinuous Donor/Acceptor Morphologies for Use as Organic Solar Cell Active Layers

    NASA Astrophysics Data System (ADS)

    Kipp, Dylan; Mok, Jorge; Verduzco, Rafael; Ganesan, Venkat

    Two of the primary challenges limiting the marketability of organic solar cells are i) the smaller device efficiency of the organic solar cell relative to the conventional silicon-based solar cell and ii) the long term thermal instability of the device active layer. The achievement of equilibrium donor/acceptor morphologies with the characteristics believed to yield high device performance characteristics could address each of these two challenges. In this work, we present the results of a combined simulations and experiments-based approach to investigate if a conjugated BCP additive can be used to control the self-assembled morphologies taken on by conjugated polymer/PCBM mixtures. First, we use single chain in mean field Monte Carlo simulations to identify regions within the conjugated polymer/PCBM composition space in which addition of copolymers can lead to bicontinuous equilibrium morphologies with high interfacial areas and nanoscale dimensions. Second, we conduct experiments as directed by the simulations to achieve such morphologies in the PTB7 + PTB7- b-PNDI + PCBM model blend. We characterize the results of our experiments via a combination of transmission electron microscopy and X-ray scattering techniques and demonstrate that the morphologies from experiments agree with those predicted in simulations. Accordingly, these results indicate that the approach utilized represents a promising approach to intelligently design the morphologies taken on by organic solar cell active layers.

  7. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    SciTech Connect

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  8. Light-induced self-assembly of active rectification devices.

    PubMed

    Stenhammar, Joakim; Wittkowski, Raphael; Marenduzzo, Davide; Cates, Michael E

    2016-04-01

    Self-propelled colloidal objects, such as motile bacteria or synthetic microswimmers, have microscopically irreversible individual dynamics-a feature they share with all living systems. The incoherent behavior of individual swimmers can be harnessed (or "rectified") by microfluidic devices that create systematic motions that are impossible in equilibrium. We present a computational proof-of-concept study showing that such active rectification devices could be created directly from an unstructured "primordial soup" of light-controlled motile particles, solely by using spatially modulated illumination to control their local propulsion speed. Alongside both microscopic irreversibility and speed modulation, our mechanism requires spatial symmetry breaking, such as a chevron light pattern, and strong interactions between particles, such as volume exclusion, which cause a collisional slowdown at high density. Together, we show how these four factors create a novel, many-body rectification mechanism. Our work suggests that standard spatial light modulator technology might allow the programmable, light-induced self-assembly of active rectification devices from an unstructured particle bath.

  9. Light-induced self-assembly of active rectification devices

    PubMed Central

    Stenhammar, Joakim; Wittkowski, Raphael; Marenduzzo, Davide; Cates, Michael E.

    2016-01-01

    Self-propelled colloidal objects, such as motile bacteria or synthetic microswimmers, have microscopically irreversible individual dynamics—a feature they share with all living systems. The incoherent behavior of individual swimmers can be harnessed (or “rectified”) by microfluidic devices that create systematic motions that are impossible in equilibrium. We present a computational proof-of-concept study showing that such active rectification devices could be created directly from an unstructured “primordial soup” of light-controlled motile particles, solely by using spatially modulated illumination to control their local propulsion speed. Alongside both microscopic irreversibility and speed modulation, our mechanism requires spatial symmetry breaking, such as a chevron light pattern, and strong interactions between particles, such as volume exclusion, which cause a collisional slowdown at high density. Together, we show how these four factors create a novel, many-body rectification mechanism. Our work suggests that standard spatial light modulator technology might allow the programmable, light-induced self-assembly of active rectification devices from an unstructured particle bath. PMID:27051883

  10. Toxin activity assays, devices, methods and systems therefor

    DOEpatents

    Koh, Chung-Yan; Schaff, Ulrich Y.; Sommer, Gregory Jon

    2016-04-05

    Embodiments of the present invention are directed toward devices, system and method for conducting toxin activity assay using sedimentation. The toxin activity assay may include generating complexes which bind to a plurality of beads in a fluid sample. The complexes may include a target toxin and a labeling agent, or may be generated due to presence of active target toxin and/or labeling agent designed to be incorporated into complexes responsive to the presence of target active toxin. The plurality of beads including the complexes may be transported through a density media, wherein the density media has a lower density than a density of the beads and higher than a density of the fluid sample, and wherein the transporting occurs, at least in part, by sedimentation. Signal may be detected from the labeling agents of the complexes.

  11. Charge transport in organic multi-layer devices under electric and optical fields

    NASA Astrophysics Data System (ADS)

    Park, June Hyoung

    2007-12-01

    Charge transport in small organic molecules and conjugated conducting polymers under electric or optical fields is studied by using field effect transistors and photo-voltaic cells with multiple thin layers. With these devices, current under electric field, photo-current under optical field, and luminescence of optical materials are measured to characterize organic and polymeric materials. For electric transport studies, poly(3,4-ethylenedioxythiophene) doped by polystyrenesulfonic acid is used, which is conductive with conductivity of approximately 25 S/cm. Despite their high conductance, field effect transistors based on the films are successfully built and characterized by monitoring modulations of drain current by gate voltage and IV characteristic curves. Due to very thin insulating layers of poly(vinylphenol), the transistors are relative fast under small gate voltage variation although heavy ions are involved in charge transport. In IV characteristic curves, saturation effects can be observed. Analysis using conventional field effect transistor model indicates high mobility of charge carriers, 10 cm2/V·sec, which is not consistent with the mobility of the conducting polymer. It is proposed that the effect of a small density of ions injected via polymer dielectric upon application of gate voltage and the ion compensation of key hopping sites accounts for the operation of the field effect transistors. For the studies of transport under optical field, photovoltaic cells with 3 different dendrons, which are efficient to harvest photo-excited electrons, are used. These dendrons consist of two electron-donors (tetraphenylporphyrin) and one electron-accepter (naphthalenediimide). Steady-state fluorescence measurements show that inter-molecular interaction is dominant in solid dendron film, although intra-molecular interaction is still present. Intra-molecular interaction is suggested by different fluorescence lifetimes between solutions of donor and dendrons. This

  12. Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance

    NASA Astrophysics Data System (ADS)

    Senokos, E.; Reguero, V.; Palma, J.; Vilatela, J. J.; Marcilla, Rebeca

    2016-02-01

    In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m2 g-1, high electrical conductivity (3.5 × 105 S m-1) and mechanical properties in the high-performance range including toughness (35 J g-1) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg-1 and 14 Wh kg-1, respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10 000 cycles of charge-discharge at 3.5 V.In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through

  13. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Kane, D.L.

    1986-01-01

    In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. During the ablation period, runoff dominates the hydrologic cycle. Some meltwater goes to rewetting the organic soils in the active layer. The remainder is lost primarily because of evaporation, since transpiration is not a very active process at this time. Following the snowmelt period, evapotranspiration becomes the dominate process, with base flow contributing the other watershed losses. It is important to note that the water initally lost by evapotranspiration entered the organic layer during melt. This water from the snowpack ensures that each year the various plant communities will have sufficient water to start a new summer of growth.

  14. Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance.

    PubMed

    Senokos, E; Reguero, V; Palma, J; Vilatela, J J; Marcilla, Rebeca

    2016-02-14

    In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m(2) g(-1), high electrical conductivity (3.5 × 10(5) S m(-1)) and mechanical properties in the high-performance range including toughness (35 J g(-1)) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg(-1) and 14 Wh kg(-1), respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10,000 cycles of charge-discharge at 3.5 V.

  15. Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

    SciTech Connect

    Momblona, C.; Malinkiewicz, O.; Soriano, A.; Gil-Escrig, L.; Bandiello, E.; Scheepers, M.; Bolink, H. J.; Edri, E.

    2014-08-01

    Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging from 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.

  16. Metallic layer-by-layer photonic crystals for linearly-polarized thermal emission and thermophotovoltaic device including same

    DOEpatents

    Lee, Jae-Hwang; Ho, Kai-Ming; Constant, Kristen P.

    2016-07-26

    Metallic thermal emitters consisting of two layers of differently structured nickel gratings on a homogeneous nickel layer are fabricated by soft lithography and studied for polarized thermal radiation. A thermal emitter in combination with a sub-wavelength grating shows a high extinction ratio, with a maximum value close to 5, in a wide mid-infrared range from 3.2 to 7.8 .mu.m, as well as high emissivity up to 0.65 at a wavelength of 3.7 .mu.m. All measurements show good agreement with theoretical predictions. Numerical simulations reveal that a high electric field exists within the localized air space surrounded by the gratings and the intensified electric-field is only observed for the polarizations perpendicular to the top sub-wavelength grating. This result suggests how the emissivity of a metal can be selectively enhanced at a certain range of wavelengths for a given polarization.

  17. Layered shielding design for an active neutron interrogation system

    NASA Astrophysics Data System (ADS)

    Whetstone, Zachary D.; Kearfott, Kimberlee J.

    2016-08-01

    The use of source and detector shields in active neutron interrogation can improve detector signal. In simulations, a shielded detector with a source rotated π/3 rad relative to the opening decreased neutron flux roughly three orders of magnitude. Several realistic source and detector shield configurations were simulated. A layered design reduced neutron and secondary photon flux in the detector by approximately one order of magnitude for a deuterium-tritium source. The shield arrangement can be adapted for a portable, modular design.

  18. Evidence for reduced charge recombination in carbon nanotube/perovskite-based active layers

    NASA Astrophysics Data System (ADS)

    Bag, Monojit; Renna, Lawrence A.; Jeong, Seung Pyo; Han, Xu; Cutting, Christie L.; Maroudas, Dimitrios; Venkataraman, D.

    2016-10-01

    Using impedance spectroscopy and computation, we show that incorporation of multi-walled carbon nanotubes (MWCNTs) in the bulk of the active layer of perovskite-based solar cells reduces charge recombination and increases the open circuit voltage. An ∼87% reduction in recombination was achieved when MWCNTs were introduced in the planar-heterostructure perovskite solar cell containing mixed counterions. The open circuit voltage (Voc) of perovskite/MWCNTs devices was increased by 70 mV, while the short circuit current density (Jsc) and fill factor (FF) remained unchanged.

  19. Impact of magnetic topology on radial electric field profile in the scrape-off layer of the Large Helical Device

    NASA Astrophysics Data System (ADS)

    Suzuki, Y.; Ida, K.; Kamiya, K.; Yoshinuma, M.; Tsuchiya, H.; Kobayashi, M.; Kawamura, G.; Ohdachi, S.; Sakakibara, S.; Watanabe, K. Y.; Hudson, S.; Feng, Y.; Yamada, I.; Yasuhara, R.; Tanaka, K.; Akiyama, T.; Morisaki, T.; The LHD Experiment Group

    2016-09-01

    The radial electric field in the plasma edge is studied in the Large Helical Device (LHD) experiments. When magnetic field lines become stochastic or open at the plasma edge and connected to the vessel, electrons are lost faster than ions along these field lines. Then, a positive electric field appears in the plasma edge. The radial electric field profile can be used to detect the effective plasma boundary. Magnetic topology is an important issue in stellarator and tokamak research because the 3D boundary has the important role of controlling MHD edge stability with respect to ELMs, and plasma detachment. Since the stochastic magnetic field layer can be controlled in the LHD by changing the preset vacuum magnetic axis, this device is a good platform to study the properties of the radial electric field that appear with the different stochastic layer width. Two magnetic configurations with different widths of the stochastic layer as simulated in vacuum are studied for low-β discharges. It has been found that a positive electric field appeared outside of the last closed flux surface. In fact the positions of the positive electric field are found in the boundary between of the stochastic layer and the scrape-off layer. To understand where is the boundary of the stochastic layer and the scrape-off layer, the magnetic field lines are analyzed statistically. The variance of the magnetic field lines in the stochastic layer is increased outwards for both configurations. However, the skewness, which means the asymmetry of the distribution of the magnetic field line, increases for only one configuration. If the skewness is large, the connection length becomes effectively short. Since that is consistent with the experimental observation, the radial electric field can be considered as an index of the magnetic topology.

  20. The Use of Multiple Slate Devices to Support Active Reading Activities

    ERIC Educational Resources Information Center

    Chen, Nicholas Yen-Cherng

    2012-01-01

    Reading activities in the classroom and workplace occur predominantly on paper. Since existing electronic devices do not support these reading activities as well as paper, users have difficulty taking full advantage of the affordances of electronic documents. This dissertation makes three main contributions toward supporting active reading…

  1. Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

    PubMed

    Courtright, Brett A E; Jenekhe, Samson A

    2015-12-01

    We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability. PMID:26550983

  2. Polyethylenimine Interfacial Layers in Inverted Organic Photovoltaic Devices: Effects of Ethoxylation and Molecular Weight on Efficiency and Temporal Stability.

    PubMed

    Courtright, Brett A E; Jenekhe, Samson A

    2015-12-01

    We report a comparative study of polyethylenimine (PEI) and ethoxylated-polyethylenimine (PEIE) cathode buffer layers in high performance inverted organic photovoltaic devices. The work function of the indium-tin oxide (ITO)/zinc oxide (ZnO) cathode was reduced substantially (Δφ = 0.73-1.09 eV) as the molecular weight of PEI was varied from 800 g mol(-1) to 750 000 g mol(-1) compared with the observed much smaller reduction when using a PEIE thin film (Δφ = 0.56 eV). The reference inverted polymer solar cells based on the small band gap polymer PBDTT-FTTE (ITO/ZnO/PBDTT-FTTE:PC70BM/MoO3/Ag), without a cathode buffer layer, had an average power conversion efficiency (PCE) of 6.06 ± 0.22%. Incorporation of a PEIE cathode buffer layer in the same PBDTT-FTTE:PC70BM blend devices gave an enhanced performance with a PCE of 7.37 ± 0.53%. In contrast, an even greater photovoltaic efficiency with a PCE of 8.22 ± 0.10% was obtained in similar PBDTT-FTTE:PC70BM blend solar cells containing a PEI cathode buffer layer. The temporal stability of the inverted polymer solar cells was found to increase with increasing molecular weight of the cathode buffer layer. The results show that PEI is superior to PEIE as a cathode buffer layer in high performance organic photovoltaic devices and that the highest molecular weight PEI interlayer provides the highest temporal stability.

  3. Laminated active matrix organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Liu, Hongyu; Sun, Runguang

    2008-02-01

    Laminated active matrix organic light-emitting device (AMOLED) realizing top emission by using bottom-emitting organic light-emitting diode (OLED) structure was proposed. The multilayer structure of OLED deposited in the conventional sequence is not on the thin film transistor (TFT) backplane but on the OLED plane. The contact between the indium tin oxide (ITO) electrode of TFT backplane and metal cathode of OLED plane is implemented by using transfer electrode. The stringent pixel design for aperture ratio of the bottom-emitting AMOLED, as well as special technology for the top ITO electrode of top-emitting AMOLED, is unnecessary in the laminated AMOLED.

  4. Active control of excessive sound emission on a mobile device.

    PubMed

    Jeon, Se-Woon; Youn, Dae Hee; Park, Young-cheol; Lee, Gun-Woo

    2015-04-01

    During a phone conversation, loud vocal emission from the far-end to the near-end space can disturb nearby people. In this paper, the possibility of actively controlling such unwanted sound emission using a control source placed on the mobile device is investigated. Two different approaches are tested: Global control, minimizing the potential energy measured along a volumetric space surface, and local control, minimizing the squared sound pressure at a discrete point on the phone. From the test results, both approaches can reduce the unwanted sound emission by more than 6 dB in the frequency range up to 2 kHz. PMID:25920885

  5. Active control of excessive sound emission on a mobile device.

    PubMed

    Jeon, Se-Woon; Youn, Dae Hee; Park, Young-cheol; Lee, Gun-Woo

    2015-04-01

    During a phone conversation, loud vocal emission from the far-end to the near-end space can disturb nearby people. In this paper, the possibility of actively controlling such unwanted sound emission using a control source placed on the mobile device is investigated. Two different approaches are tested: Global control, minimizing the potential energy measured along a volumetric space surface, and local control, minimizing the squared sound pressure at a discrete point on the phone. From the test results, both approaches can reduce the unwanted sound emission by more than 6 dB in the frequency range up to 2 kHz.

  6. Device lifetime improvement of polymer-based bulk heterojunction solar cells by incorporating copper oxide layer at Al cathode

    NASA Astrophysics Data System (ADS)

    Wang, Mingdong; Xie, Fangyan; Xie, Weiguang; Zheng, Shizhao; Ke, Ning; Chen, Jian; Zhao, Ni; Xu, J. B.

    2011-05-01

    Organic solar cells are commonly susceptible to degradation in air. We present that insertion of a thin layer of thermally evaporated copper oxide (CuOx) between the organic active layer and the Al cathode can greatly extend the lifetime of P3HT:PCBM based bulk heterojunction solar cells. The performance can be further improved by applying an interfacial bilayer of CuOx/LiF. Our results suggest that the CuOx functions not only as a charge transport layer but also as a protection layer, which prevents formation of thick organic-Al interdiffusion area. This leads to a more air-resistive cathode/organic interface.

  7. Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same

    DOEpatents

    Aytug, Tolga; Paranthaman, Mariappan Parans; Polat, Ozgur

    2012-07-17

    An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

  8. Surface activation of CNT Webs towards layer by layer assembly of biosensors.

    PubMed

    Musameh, Mustafa; Huynh, Chi P; Hickey, Mark; Kyratzis, Ilias Louis

    2016-04-25

    Several surface activation methods such as chemical, electrochemical and plasma have been used for enhancing the electrochemical performance of carbon based electrodes for various applications. However, some of these surface activation methods may not be useful depending on the chemical and physical properties of the activated surface. Herein we investigate the surface activation of carbon nanotube (CNT) webs by electrochemical and plasma techniques to enhance their electrochemical performance and enable the fabrication of a biosensor using the layer-by-layer (LBL) approach. The pretreated CNT webs were characterized by SEM, TEM, Raman, XPS and electrochemical methods. TEM images and Raman analysis showed an increase in the level of surface defects upon pretreatment with higher number of defects after electrochemical pretreatment. XPS analysis showed an increase in the level of oxygen functional groups after pretreatment (4 to 5 times increase) which resulted in enhanced water wettability especially for plasma pretreated CNT webs. The pretreated CNT web electrodes also showed an enhanced electrochemical activity towards the oxidation and reduction of different redox probes with higher sensitivity for the electrochemically pretreated CNT web electrode that was accompanied by a higher level of noise in amperometric measurements. A highly linear response was obtained for the untreated and the electrochemically pretreated CNT web electrodes towards the amperometric detection of NADH (R(2) of 0.9996 and 0.9986 respectively) while a non-linear response was observed for the plasma pretreated CNT web electrode (R(2) of 0.8538). The pretreated CNT web electrodes enabled the fabrication of a LBL biosensor for alcohol detection with highest operational stability obtained for the plasma pretreated CNT web surface.

  9. Fabric Active Transducer Stimulated by Water Motion for Self-Powered Wearable Device.

    PubMed

    Kwon, Soon-Hyung; Kim, Won Keun; Park, Junwoo; Yang, YoungJun; Yoo, Byungwook; Han, Chul Jong; Kim, Youn Sang

    2016-09-21

    The recent trend of energy-harvesting devices is an adoption of fabric materials with flexible and stretchable according to the increase of wearable electronics. But it is a difficult process to form a core structure of dielectric layer or electrode on fabric materials. In particular, a fabric-based energy-harvesting device in contact with water has not been studied, though there are many challenging issues including insulation and water absorption in a harsh environment. So we propose an effective method to obtain an electrical energy from the water contact using our new fabric energy harvesting device. Our water motion active transducer (WMAT) is designed to obtain electrical energy from the variable capacitance through the movement and contact of water droplet. In this paper, we succeeded in generating an electrical energy with peak to peak power of 280 μW using a 30 μL of water droplet with the fabric WMAT device of 70 mm × 50 mm dimension. Furthermore, we specially carried out spray-coating and transfer processes instead of the conventional spin-coating process on fabric materials to overcome the limitation of its uneven morphology and porous and deformable assembly. PMID:27564593

  10. Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers

    NASA Astrophysics Data System (ADS)

    Horng, Ray-Hua; Ravadgar, Parvaneh

    2013-03-01

    Single crystal β-Ga2O3 epitaxial layers have been prepared on c-axis (0001) sapphire substrates using metalorganic chemical vapor deposition technique at relatively low temperature. Post-annealing of β-Ga2O3 single crystals up to 800 °C does not affect the crystallinity, explored by x-ray diffraction, showing that β-Ga2O3 epitaxial layers are highly (-201) oriented. Metal-semiconductor-metal devices are fabricated on single crystals to study their photoresponsivity. A significant improvement in performance of post annealed-based devices is observed, attributed to point defect reduction. Annealing of as-grown samples results to a significant decrease in both oxygen and gallium vacancies, which are sources of current leakage.

  11. Polymer layer ordering of polyaniline derivatives in PLED devices: Surface adsorption and characterization[Polymer Light Emitting Diodes

    SciTech Connect

    Advincula, R.C.; Knoll, W.; Frank, C.W.; Roitman, D.; Moon, R.; Sheats, J.

    1998-07-01

    The fabrication and characterization of polyaniline (PANI) derivatives deposited on ITO coated glass is investigated as possible hole injection layers for MEH-PPV based polymer light emitting diode (PLED) devices. This involved multilayer ordering by the alternate polyelectrolyte adsorption of polyaniline and sulfonated polyaniline with an oppositely charged polyelectrolyte from solution. A combination of spectroscopic and microscopic techniques was utilized to determine the layer ordering, film structure, morphology, and homogeneity. The deposition process generally showed a linear behavior for all pairs as shown by ellipsometry and UV-vis spectroscopy. However, surface plasmon spectroscopy (SPS) and AFM revealed that thicker films are accompanied by increased surface roughness regardless of concentration. Comparison in performance was made between bare ITO and PANI or SPANI coated devices. Initial investigations of PLED performance showed significant improvements in lifetime and efficiency compared to bare ITO.

  12. Inferring Human Activity in Mobile Devices by Computing Multiple Contexts

    PubMed Central

    Chen, Ruizhi; Chu, Tianxing; Liu, Keqiang; Liu, Jingbin; Chen, Yuwei

    2015-01-01

    This paper introduces a framework for inferring human activities in mobile devices by computing spatial contexts, temporal contexts, spatiotemporal contexts, and user contexts. A spatial context is a significant location that is defined as a geofence, which can be a node associated with a circle, or a polygon; a temporal context contains time-related information that can be e.g., a local time tag, a time difference between geographical locations, or a timespan; a spatiotemporal context is defined as a dwelling length at a particular spatial context; and a user context includes user-related information that can be the user’s mobility contexts, environmental contexts, psychological contexts or social contexts. Using the measurements of the built-in sensors and radio signals in mobile devices, we can snapshot a contextual tuple for every second including aforementioned contexts. Giving a contextual tuple, the framework evaluates the posteriori probability of each candidate activity in real-time using a Naïve Bayes classifier. A large dataset containing 710,436 contextual tuples has been recorded for one week from an experiment carried out at Texas A&M University Corpus Christi with three participants. The test results demonstrate that the multi-context solution significantly outperforms the spatial-context-only solution. A classification accuracy of 61.7% is achieved for the spatial-context-only solution, while 88.8% is achieved for the multi-context solution. PMID:26343665

  13. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    SciTech Connect

    Jie, Qing; Ren, Zhifeng; Chen, Gang

    2015-12-08

    Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

  14. Nonlinear buffer layers relevant for reduced nonlinear effects in HTS microwave devices

    NASA Astrophysics Data System (ADS)

    Seron, D.

    2008-02-01

    Microwave devices made of a High-Temperature Superconductor (HTS) exhibit a nonlinear response as the microwave power increases. The HTS nonlinearities generate a nonlinear inductance Ld(irf) and a nonlinear resistance Rd(irf) in a device. Ld(irf) and Rd(irf) are responsible for an increase of the device loss, a small frequency dispersion as well as the generation of spurious signals like Intermodulation Distortion (IMD). Nevertheless, the HTS nonlinearities in a microwave device can be reduced using a nonlinear dielectric like a ParaElectric Material (PEM). This assumption has recently been demonstrated theoretically. In a microwave device made of a HTS and a PEM, the nonlinear contribution to the capacitance Cd(vrf) from the PEM acts oppositely to the nonlinear contribution to Ld(irf). This may cancel the effect of the HTS inductive nonlinearities. The PEM also produces a nonlinear conductance Gd(vrf) in a device. All these nonlinear terms contribute to the IMD output power and the nonlinear quality factor (Q0) of a resonant passive microwave device. In this paper, the dependence of the different nonlinear contributions on frequency and applied dc bias voltage (Vdc) is investigated. The relevance to employ PEM in order to reduce the nonlinearities in HTS microwave devices is discussed.

  15. A Simple Apparatus for the Injection of Lithium Aerosol into the Scrape-Off Layer of Fusion Research Devices

    SciTech Connect

    D. K. Mansfield, A.L Roquemore, H. Schneider, J. Timberlake, H. Kugel, M.G. Bell and the NSTX Research Team

    2010-10-11

    A simple device has been developed to deposit elemental lithium onto plasma facing components in the National Spherical Torus Experiment. Deposition is accomplished by dropping lithium powder into the plasma column. Once introduced, lithium particles quickly become entrained in scrape-off layer flow as an evaporating aerosol. Particles are delivered through a small central aperture in a computer-controlled resonating piezoelectric disk on which the powder is supported. The device has been used to deposit lithium both during discharges as well as prior to plasma breakdown. Clear improvements to plasma performance have been demonstrated. The use of this apparatus provides flexibility in the amount and timing of lithium deposition and, therefore, may benefit future fusion research devices.

  16. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    SciTech Connect

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  17. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Atiya, G.; Cohen-Hyams, Z.; Weindling, S.; Ankonina, G.; Salzman, J.; Kaplan, W. D.; Eisenstein, G.

    2015-10-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  18. Method and apparatus for actively controlling a micro-scale flexural plate wave device

    DOEpatents

    Dohner, Jeffrey L.

    2001-01-01

    An actively controlled flexural plate wave device provides a micro-scale pump. A method of actively controlling a flexural plate wave device produces traveling waves in the device by coordinating the interaction of a magnetic field with actively controlled currents. An actively-controlled flexural plate wave device can be placed in a fluid channel and adapted for use as a micro-scale fluid pump to cool or drive micro-scale systems, for example, micro-chips, micro-electrical-mechanical devices, micro-fluid circuits, or micro-scale chemical analysis devices.

  19. Origin of photogenerated carrier recombination at the metal-active layer interface in polymer solar cells.

    PubMed

    Kumar, Mukesh; Dubey, Ashish; Reza, Khan Mamun; Adhikari, Nirmal; Qiao, Qiquan; Bommisetty, Venkat

    2015-11-01

    The role of the metal-active layer interface in photogenerated recombination has been investigated using nanoscale current sensing atomic force microscopy (CS-AFM) and intensity modulated photocurrent spectroscopy (IMPS) in as-deposited, pre-annealed and post-annealed bulk heterojunction (BHJ) solar cells. Aluminum (Al) confined post-annealed BHJ solar cells exhibited a significantly improved device efficiency compared to pre-annealed BHJ solar cells having similar photocarrier harvesting ability in the active layer. The nanoscale topography and CS-AFM results indicate a uniform PCBM rich phase at the metal-active layer interface in the post-annealed cells, but PCBM segregation in the pre-annealed cells. These two different annealing processes showed different carrier dynamics revealed using IMPS under various light intensities. The IMPS results suggest reduced photo generated carrier recombination in uniform PCBM rich post-annealed BHJ solar cells. This study reveals the importance of the metal-bend interface in BHJ solar cells in order to obtain efficient charge carrier extraction for high efficiency. PMID:26431263

  20. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment.

  1. UV-ozone-treated ultra-thin NaF film as anode buffer layer on organic light emitting devices.

    PubMed

    Chen, Yu-Cheng; Kao, Po-Ching; Chu, Sheng-Yuan

    2010-06-21

    An ultra-thin NaF film was thermally deposited between ITO and NPB as the buffer layer and then treated with the ultraviolet (UV) ozone, in the fabrication of organic light emitting diodes (ITO/NaF/NPB/Alq(3)/LiF/Al) to study its effect on hole-injection properties. The treatment drastically transforms the role of NaF film from hole-blocking to hole-injecting. This transformation is elucidated using hole-only devices, energy band measurement, surface energy, surface polarity, and X-ray photoelectron spectra. With the optimal thickness (3 nm) of the UV-ozone-treated NaF layer, the device performance is significantly improved, with a turn-on voltage, maximum luminance, and maximum current efficiency of 2.5 V, 15700 cd/m(2), and 4.9 cd/A, respectively. Results show that NaF film is not only a hole-blocking layer, but also a promising hole-injecting layer after UV-ozone treatment. PMID:20588585

  2. Experiments on the active control of transitional boundary layers

    NASA Astrophysics Data System (ADS)

    Nelson, P. A.; Rioual, J.-L.; Fisher, M. J.

    Experimental results are presented which demonstrate that the streamwise position of the transition region of a flat plate boundary layer can be actively controlled. The means of control is through the application of suction through the surface of the plate, a progressive increase in suction rate being capable of producing transition at progressively larger distances downstream from the plate leading edge. A simple digital feedback regulator based on an integral control law is shown to be most effective in regulating the position of transition, an error signal being derived from measurements of pressure fluctuations on the surface of the plate.

  3. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  4. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  5. Active Microfluidic Devices for Single-Molecule Experiments

    NASA Astrophysics Data System (ADS)

    Chen, Hao; Meiners, Jens-Christian

    2003-03-01

    Microfluidic chips have become an increasingly powerful and versatile tool in the life sciences. Multilayer devices fabricated from soft silicone elastomers in a replication molding technique are especially promising, because they permit flexible integration of active elements such as valves and pumps. In addition, they are fairly easy and inexpensive to produce. In a wide range of applications, microfluidic chips are used in conjunction with optical detection and manipulation techniques. However their widespread use has been hampered due to problems with interconnect stability, optical accessibility, and ability to perform surface chemistry. We have developed a packaging technique that encapsulates the elastomer in an epoxy resin of high optical quality. This stabilizes the interconnects so that a chip can be repeatedly plugged in and out of a socket. Our technique also eliminates the need for a baking step that is conventionally used to attach a glass cover slip to the elastomer surface. This allows us to assemble devices that contain a cover slip coated with proteins, thereby permitting subsequent in situ attachment of DNA molecules to the bottom of the flow channels. We demonstrate the utility of our chips in single-molecule applications involving tethered-particles and optical tweezers. Support: NIH R01 GM065934 & Research Corporation

  6. PARduino: A Simple Device Measuring and Logging Photosynthetically Active Radiation

    NASA Astrophysics Data System (ADS)

    Barnard, H. R.; Findley, M. C.

    2013-12-01

    Photosynthetically Active Radiation (PAR, 400 to 700 nm) is one of the primary controls of forest carbon and water relations. In complex terrain, PAR has high spatial-variability. Given the high cost of commercial datalogging equipment, spatially-distributed measurements of PAR have been typically modeled using geographic coordinates and terrain indices. Here, we present a design for a low cost, field-deployable device for measuring and logging PAR built around an Arduino microcontroller (we named it PARduino). PARduino provides for widely distributed sensor arrays and tests the feasibility of using hobbyist-grade electronics for collecting scientific data. PARduino components include a LiCor quantum sensor, EME Systems signal converter/amplifier, and Sparkfun's Arduino Pro Mini microcontroller. Additional components include a real time clock, a microSD flash memory card, and a custom printed circuit board (PCB). We selected the components with an eye towards ease of assembly. Everything can be connected to the PCB using through-hole soldering techniques. Since the device will be deployed in remote research plots that lack easy access to line power, battery life was also a consideration in the design. Extended deployment is possible because PARduino's software keeps it in a low-power sleep mode until ready to make a measurement. PARduino will be open-source hardware for use and improvement by others.

  7. OLED lighting devices having multi element light extraction and luminescence conversion layer

    DOEpatents

    Krummacher, Benjamin Claus; Antoniadis, Homer

    2010-11-16

    An apparatus such as a light source has a multi element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

  8. Simulation of magnetic active polymers for versatile microfluidic devices

    NASA Astrophysics Data System (ADS)

    Gusenbauer, Markus; Özelt, Harald; Fischbacher, Johann; Reichel, Franz; Exl, Lukas; Bance, Simon; Kataeva, Nadezhda; Binder, Claudia; Brückl, Hubert; Schrefl, Thomas

    2013-01-01

    We propose to use a compound of magnetic nanoparticles (20-100 nm) embedded in a flexible polymer (Polydimethylsiloxane PDMS) to filter circulating tumor cells (CTCs). The analysis of CTCs is an emerging tool for cancer biology research and clinical cancer management including the detection, diagnosis and monitoring of cancer. The combination of experiments and simulations lead to a versatile microfluidic lab-on-chip device. Simulations are essential to understand the influence of the embedded nanoparticles in the elastic PDMS when applying a magnetic gradient field. It combines finite element calculations of the polymer, magnetic simulations of the embedded nanoparticles and the fluid dynamic calculations of blood plasma and blood cells. With the use of magnetic active polymers a wide range of tunable microfluidic structures can be created. The method can help to increase the yield of needed isolated CTCs.

  9. Optical activity of transparent polymer layers characterized by spectral means

    NASA Astrophysics Data System (ADS)

    Cosutchi, Andreea Irina; Dimitriu, Dan Gheorghe; Zelinschi, Carmen Beatrice; Breaban, Iuliana; Dorohoi, Dana Ortansa

    2015-06-01

    The method based on the channeled spectrum, validated for inorganic optical active layers, is used now to determine the optical activity of some transparent polymer solutions in different solvents. The circular birefringence, the dispersion parameter and the specific rotation were estimated in the visible range by using the measurements of wavelengths in the channeled spectra of Hydroxypropyl cellulose in water, methanol and acetic acid. The experiments showed the specific rotation dependence on the polymer concentration and also on the solvent nature. The decrease of the specific rotation in the visible range with the increase in wavelength was evidenced. The method has some advantages as the rapidity of the experiments and the large spectral range in which it can be applied. One disadvantage is the fact that the channeled spectrum does not allow to establish the rotation sense of the electric field intensity.

  10. SEMICONDUCTOR DEVICES: Carrier stored trench-gate bipolar transistor with p-floating layer

    NASA Astrophysics Data System (ADS)

    Rongyao, Ma; Zehong, Li; Xin, Hong; Bo, Zhang

    2010-02-01

    A carrier stored trench-gate bipolar transistor (CSTBT) with a p-floating layer (PF-CSTBT) is proposed. Due to the p-floating layer, the thick and highly doped carrier stored layer can be induced, and the conductivity modulation effect will be enhanced near the emitter. The accumulation resistance and the spreading resistance are reduced. The on-state loss will be much lower than in a conventional CSTBT. With the p-floating layer, the distribution of electric fields of the conventional IGBT is reformed, and the breakdown voltage is remarkably improved. The simulation results have shown that the forward voltage drop (VCE-on) of the novel structure is reduced by 20% and 17% respectively, compared with the conventional trench IGBT (TIGBT) and CSTBT under the same conditions. Moreover, an increment of more than 100 V of the breakdown voltage is achieved without sacrificing the SCSOA (short circuit safely operation area) compared with the conventional TIGBT.

  11. Using DNA devices to track anticancer drug activity.

    PubMed

    Kahanda, Dimithree; Chakrabarti, Gaurab; Mcwilliams, Marc A; Boothman, David A; Slinker, Jason D

    2016-06-15

    It is beneficial to develop systems that reproduce complex reactions of biological systems while maintaining control over specific factors involved in such processes. We demonstrated a DNA device for following the repair of DNA damage produced by a redox-cycling anticancer drug, beta-lapachone (β-lap). These chips supported ß-lap-induced biological redox cycle and tracked subsequent DNA damage repair activity with redox-modified DNA monolayers on gold. We observed drug-specific changes in square wave voltammetry from these chips at therapeutic ß-lap concentrations of high statistical significance over drug-free control. We also demonstrated a high correlation of this change with the specific ß-lap-induced redox cycle using rational controls. The concentration dependence of ß-lap revealed significant signal changes at levels of high clinical significance as well as sensitivity to sub-lethal levels of ß-lap. Catalase, an enzyme decomposing peroxide, was found to suppress DNA damage at a NQO1/catalase ratio found in healthy cells, but was clearly overcome at a higher NQO1/catalase ratio consistent with cancer cells. We found that it was necessary to reproduce key features of the cellular environment to observe this activity. Thus, this chip-based platform enabled tracking of ß-lap-induced DNA damage repair when biological criteria were met, providing a unique synthetic platform for uncovering activity normally confined to inside cells. PMID:26901461

  12. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/

    DOEpatents

    Osbourn, G.C.

    1983-10-06

    An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

  13. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  14. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    NASA Astrophysics Data System (ADS)

    Li, X.; Bergsten, J.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Rorsman, N.; Janzén, E.; Forsberg, U.

    2015-12-01

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 1018 cm-3) epitaxial layer closest to the substrate and a lower doped layer (3 × 1016 cm-3) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 1018 cm-3) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  15. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

    PubMed

    Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

    2015-08-12

    Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

  16. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

    PubMed

    Mundle, Rajeh; Carvajal, Christian; Pradhan, Aswini K

    2016-05-17

    ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandgap. ZnO has multiple electronic states that depend on the number of vacancies and the charge state of each vacancy. In addition to the individual electron states, the vacancies have different vibrational states. We developed a high-temperature precursor vapor mask technique using Al2O3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior. The change in the resistance between the high- and low-resistivity states of the memristor with a combination of Al2O3 and TiO2 was approximately 157%. The devices were exposed to laser light from three different laser diodes. The 450 nm laser diode noticeably affected the combined Al2O3 and TiO2 barrier, creating a high-resistivity state with a 2.9% shift under illumination. The high-resistivity state shift under laser illumination indicates defect shifts and the thermodynamic transition of ZnO defects. PMID:27124366

  17. ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

    PubMed

    Mundle, Rajeh; Carvajal, Christian; Pradhan, Aswini K

    2016-05-17

    ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandgap. ZnO has multiple electronic states that depend on the number of vacancies and the charge state of each vacancy. In addition to the individual electron states, the vacancies have different vibrational states. We developed a high-temperature precursor vapor mask technique using Al2O3 to pattern the atomic layer deposition of ZnO and Al:ZnO layers on ZnO-based substrates. This technique was used to create a memristor device based on Al:ZnO thin films having metallic and semiconducting and insulating transport properties ZnO. We demonstrated that adding combination of Al2O3 and TiO2 barrier layers improved the resistive switching behavior. The change in the resistance between the high- and low-resistivity states of the memristor with a combination of Al2O3 and TiO2 was approximately 157%. The devices were exposed to laser light from three different laser diodes. The 450 nm laser diode noticeably affected the combined Al2O3 and TiO2 barrier, creating a high-resistivity state with a 2.9% shift under illumination. The high-resistivity state shift under laser illumination indicates defect shifts and the thermodynamic transition of ZnO defects.

  18. Active Flow Control on a Boundary-Layer-Ingesting Inlet

    NASA Technical Reports Server (NTRS)

    Gorton, Susan Althoff; Owens, Lewis R.; Jenkins, Luther N.; Allan, Brian G.; Schuster, Ernest P.

    2004-01-01

    Boundary layer ingestion (BLI) is explored as means to improve overall system performance for Blended Wing Body configuration. The benefits of BLI for vehicle system performance benefit are assessed with a process derived from first principles suitable for highly-integrated propulsion systems. This performance evaluation process provides framework within which to assess the benefits of an integrated BLI inlet and lays the groundwork for higher-fidelity systems studies. The results of the system study show that BLI provides a significant improvement in vehicle performance if the inlet distortion can be controlled, thus encouraging the pursuit of active flow control (AFC) as a BLI enabling technology. The effectiveness of active flow control in reducing engine inlet distortion was assessed using a 6% scale model of a 30% BLI offset, diffusing inlet. The experiment was conducted in the NASA Langley Basic Aerodynamics Research Tunnel with a model inlet designed specifically for this type of testing. High mass flow pulsing actuators provided the active flow control. Measurements were made of the onset boundary layer, the duct surface static pressures, and the mass flow through the duct and the actuators. The distortion was determined by 120 total pressure measurements located at the aerodynamic interface plane. The test matrix was limited to a maximum freestream Mach number of 0.15 with scaled mass flows through the inlet for that condition. The data show that the pulsed actuation can reduce distortion from 29% to 4.6% as measured by the circumferential distortion descriptor DC60 using less than 1% of inlet mass flow. Closed loop control of the actuation was also demonstrated using a sidewall surface static pressure as the response sensor.

  19. Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

    PubMed Central

    Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

    2016-01-01

    Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems. PMID:27008981

  20. Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

    NASA Astrophysics Data System (ADS)

    Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

    2016-03-01

    Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems.

  1. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III, James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  2. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device.

    PubMed

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-03-02

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal.

  3. Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber Device

    PubMed Central

    Hu, Xiao; Zeng, Mengqi; Long, Yun; Liu, Jun; Zhu, Yixiao; Zou, Kaiheng; Zhang, Fan; Fu, Lei; Wang, Jian

    2016-01-01

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wave mixing (FWM) and transparent wavelength conversion by non-degenerate FWM in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. We also compare the time-varying symbol sequence for graphene-assisted phase conjugated and transparent wavelength conversions of Nyquist 16-QAM signal. PMID:26932470

  4. Use of a multi-layer column device for study on leachability of nitrate in sludge-amended soils.

    PubMed

    Luo, Yongming; Qiao, Xianliang; Song, Jing; Christie, Peter; Wong, Minghung

    2003-09-01

    This paper described a multi-layer column device constructed with six cylindrical polythene tubes with installation of Rhizon soil moisture samplers (Rhizon SMS). The feasibility of using the column device to collect soil solution and percolate and to monitor leachability of nitrate in two sludge-amended soils was evaluated under glasshouse conditions. The soil moisture sampler in the device was demonstrated to be a non-destructive, simultaneous, sequential, convenient and rapid sampling tool for multiple-site porewater extraction. The device provided an in situ monitoring technique for leachability of nitrate in a soil profile following application of the anaerobically digested sewage sludge. The monitored results showed that surface soil amendment of the sewage sludge increased markedly the concentration of nitrate in the soil solutions at depths of 10-30 cm in a neutral paddy soil and at 30-50 cm in an acid red paddy soil. This amendment also largely increased nitrate in the percolates of the acid red soil. The movement and distribution patterns of nitrate in the profile were related to soil types, profile depths and experimental periods. Land application of sewage sludge may pose a risk in groundwater contamination of nitrate.

  5. Solution Synthesized p-Type Copper Gallium Oxide Nanoplates as Hole Transport Layer for Organic Photovoltaic Devices.

    PubMed

    Wang, Jian; Ibarra, Vanessa; Barrera, Diego; Xu, Liang; Lee, Yun-Ju; Hsu, Julia W P

    2015-03-19

    p-Type metal-oxide hole transport layer (HTL) suppresses recombination at the anode and hence improves the organic photovoltaic (OPV) device performance. While NiOx has been shown to exhibit good HTL performance, very thin films (<10 nm) are needed due to its poor conductivity and high absorption. To overcome these limitations, we utilize CuGaO2, a p-type transparent conducting oxide, as HTL for OPV devices. Pure delafossite phase CuGaO2 nanoplates are synthesized via microwave-assisted hydrothermal reaction in a significantly shorter reaction time compared to via conventional heating. A thick CuGaO2 HTL (∼280 nm) in poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) devices achieves 3.2% power conversion efficiency, on par with devices made with standard HTL materials. Such a thick CuGaO2 HTL is more compatible with large-area and high-volume printing process.

  6. Mega-scale simulation of multi-layer devices: Formulation, kinetics, and visualization

    NASA Astrophysics Data System (ADS)

    Dutton, Robert W.

    1994-07-01

    A new energy transport model including both carrier and lattice temperatures has been developed and implemented in PISCES 2ET. Major capabilities in physical models for compound semiconductor devices include: heterojunction interfaces, deep level trapping, and new mobility models. Applications of PISCES 2ET in the modeling of GaAs MESFET sidegating and electronic effects in light-emitting structures have been achieved. The GaAs MESFET modeling of dc and ac effects have been confirmed experimentally at Stanford and in collaboration with industry. The LED and vertical cavity laser modeling is being applied by Hewlett-Packard in both their research laboratories and product divisions. Algorithms developed for improved accuracy and efficiency in device modeling include: ac analysis for microwave devices, multiprocessor direct solvers, and massively parallel iterative solvers. Supported under the high-performance computing (HPC) initiative, a prototype version of PISCES-MEP running on Intel, Thinking Machines, and IBM parallel machines has demonstrated order-of-magnitude speed enhancements compared to the single processor version. The parallel iterative solver in the STRIDE 3D code has solved device problems with 15 million equations in 20 minutes on a 520 processor Intel machine. A mixed-mode analysis capability that couples PISCES and SPICE has been demonstrated and applied to SRAM and OEIC applications.

  7. Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

    SciTech Connect

    Zhang, H. Z.; Ang, D. S. Gu, C. J.; Yew, K. S.; Wang, X. P.; Lo, G. Q.

    2014-12-01

    The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.

  8. Controlled surface oxidation of multi-layered graphene anode to increase hole injection efficiency in organic electronic devices

    NASA Astrophysics Data System (ADS)

    Han, Tae-Hee; Kwon, Sung-Joo; Seo, Hong-Kyu; Lee, Tae-Woo

    2016-03-01

    Ultraviolet ozone (UVO) surface treatment of graphene changes its sp2-hybridized carbons to sp3-bonded carbons, and introduces oxygen-containing components. Oxidized graphene has a finite energy band gap, so UVO modification of the surface of a four-layered graphene anode increases its surface ionization potential up to ∼5.2 eV and improves the hole injection efficiency (η) in organic electronic devices by reducing the energy barrier between the graphene anode and overlying organic layers. By controlling the conditions of the UVO treatment, the electrical properties of the graphene can be tuned to improve η. This controlled surface modification of the graphene will provide a way to achieve efficient and stable flexible displays and solid-state lighting.

  9. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices.

    PubMed

    O'Dwyer, C; Szachowicz, M; Visimberga, G; Lavayen, V; Newcomb, S B; Torres, C M Sotomayor

    2009-04-01

    Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices. PMID:19350034

  10. Automated Retinal Layer Segmentation Using Spectral Domain Optical Coherence Tomography: Evaluation of Inter-Session Repeatability and Agreement between Devices.

    PubMed

    Terry, Louise; Cassels, Nicola; Lu, Kelly; Acton, Jennifer H; Margrain, Tom H; North, Rachel V; Fergusson, James; White, Nick; Wood, Ashley

    2016-01-01

    Retinal and intra-retinal layer thicknesses are routinely generated from optical coherence tomography (OCT) images, but on-board software capabilities and image scaling assumptions are not consistent across devices. This study evaluates the device-independent Iowa Reference Algorithms (Iowa Institute for Biomedical Imaging) for automated intra-retinal layer segmentation and image scaling for three OCT systems. Healthy participants (n = 25) underwent macular volume scans using a Cirrus HD-OCT (Zeiss), 3D-OCT 1000 (Topcon), and a non-commercial long-wavelength (1040nm) OCT on two occasions. Mean thickness of 10 intra-retinal layers was measured in three ETDRS subfields (fovea, inner ring and outer ring) using the Iowa Reference Algorithms. Where available, total retinal thicknesses were measured using on-board software. Measured axial eye length (AEL)-dependent scaling was used throughout, with a comparison made to the system-specific fixed-AEL scaling. Inter-session repeatability and agreement between OCT systems and segmentation methods was assessed. Inter-session coefficient of repeatability (CoR) for the foveal subfield total retinal thickness was 3.43μm, 4.76μm, and 5.98μm for the Zeiss, Topcon, and long-wavelength images respectively. For the commercial software, CoR was 4.63μm (Zeiss) and 7.63μm (Topcon). The Iowa Reference Algorithms demonstrated higher repeatability than the on-board software and, in addition, reliably segmented all 10 intra-retinal layers. With fixed-AEL scaling, the algorithm produced significantly different thickness values for the three OCT devices (P<0.05), with these discrepancies generally characterized by an overall offset (bias) and correlations with axial eye length for the foveal subfield and outer ring (P<0.05). This correlation was reduced to an insignificant level in all cases when AEL-dependent scaling was used. Overall, the Iowa Reference Algorithms are viable for clinical and research use in healthy eyes imaged with

  11. Automated Retinal Layer Segmentation Using Spectral Domain Optical Coherence Tomography: Evaluation of Inter-Session Repeatability and Agreement between Devices

    PubMed Central

    Terry, Louise; Cassels, Nicola; Lu, Kelly; Acton, Jennifer H.; Margrain, Tom H.; North, Rachel V.; Fergusson, James; White, Nick; Wood, Ashley

    2016-01-01

    Retinal and intra-retinal layer thicknesses are routinely generated from optical coherence tomography (OCT) images, but on-board software capabilities and image scaling assumptions are not consistent across devices. This study evaluates the device-independent Iowa Reference Algorithms (Iowa Institute for Biomedical Imaging) for automated intra-retinal layer segmentation and image scaling for three OCT systems. Healthy participants (n = 25) underwent macular volume scans using a Cirrus HD-OCT (Zeiss), 3D-OCT 1000 (Topcon), and a non-commercial long-wavelength (1040nm) OCT on two occasions. Mean thickness of 10 intra-retinal layers was measured in three ETDRS subfields (fovea, inner ring and outer ring) using the Iowa Reference Algorithms. Where available, total retinal thicknesses were measured using on-board software. Measured axial eye length (AEL)-dependent scaling was used throughout, with a comparison made to the system-specific fixed-AEL scaling. Inter-session repeatability and agreement between OCT systems and segmentation methods was assessed. Inter-session coefficient of repeatability (CoR) for the foveal subfield total retinal thickness was 3.43μm, 4.76μm, and 5.98μm for the Zeiss, Topcon, and long-wavelength images respectively. For the commercial software, CoR was 4.63μm (Zeiss) and 7.63μm (Topcon). The Iowa Reference Algorithms demonstrated higher repeatability than the on-board software and, in addition, reliably segmented all 10 intra-retinal layers. With fixed-AEL scaling, the algorithm produced significantly different thickness values for the three OCT devices (P<0.05), with these discrepancies generally characterized by an overall offset (bias) and correlations with axial eye length for the foveal subfield and outer ring (P<0.05). This correlation was reduced to an insignificant level in all cases when AEL-dependent scaling was used. Overall, the Iowa Reference Algorithms are viable for clinical and research use in healthy eyes imaged with

  12. One-layer microfluidic device for hydrodynamic 3D self-flow-focusing operating in low flow speed

    NASA Astrophysics Data System (ADS)

    Daghighi, Yasaman; Gnyawali, Vaskar; Strohm, Eric M.; Tsai, Scott S. H.; Kolios, Michael C.

    2016-03-01

    Hydrodynamic 3D flow-focusing techniques in microfluidics are categorized as (a) sheathless techniques which require high flow rates and long channels, resulting in high operating cost and high flow rates which are inappropriate for applications with flow rate limitations, and (b) sheath-flow based techniques which usually require excessive sheath flow rate to achieve hydrodynamic 3D flow-focusing. Many devices based on these principles use complicated fabrication methods to create multi-layer microchannels. We have developed a sheath-flow based microfluidic device that is capable of hydrodynamic 3D self-flow-focusing. In this device the main flow (black ink) in a low speed, and a sheath flow, enter through two inlets and enter a 180 degree curved channel (300 × 300 μm cross-section). Main flow migrates outwards into the sheath-flow due to centrifugal effects and consequently, vertical focusing is achieved at the end of the curved channel. Then, two other sheath flows horizontally confine the main flow to achieve horizontal focusing. Thus, the core flow is three-dimensionally focused at the center of the channel at the downstream. Using centrifugal force for 3D flow-focusing in a single-layer fabricated microchannel has been previously investigated by few groups. However, their demonstrated designs required high flow speed (>1 m/s) which is not suitable for many applications that live biomedical specie are involved. Here, we introduce a new design which is operational in low flow speed (<0.05 m/s) and is suitable for applications involving live cells. This microfluidic device can be used in detecting, counting and isolating cells in many biomedical applications.

  13. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, Greg W.; Baldasaro, Paul F.; Egley, James L.

    1998-01-01

    A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.

  14. Thermophotovoltaic energy conversion device

    DOEpatents

    Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

    1998-05-19

    A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

  15. Unpinning the Open-Circuit Voltage in Organic Solar Cells through Tuning Ternary Blend Active Layer Morphology

    NASA Astrophysics Data System (ADS)

    Khlyabich, Petr; Thompson, Barry; Loo, Yueh-Lin

    2015-03-01

    The use of ternary, as opposed to binary, blends having complementary absorption in active layers of organic bulk heterojunction solar cells is a simple approach to increase overall light absorption. While the open-circuit voltage (Voc) of such solar cells have generally been shown to be pinned by the smallest energy level difference between the donor and acceptor constituents, there have been materials systems, that when incorporated into active layers of solar cells, exhibit composition dependent and tunable Voc. Herein, we demonstrate that this Voc tunability in ternary blend solar cells is correlated with the morphology of the active layer. Chemical compatibility between the constituents in the blend, as probed by grazing-incidence X-ray diffraction (GIXD) measurements, affords Voc tuning. The constituents need not ``co-crystallize'' limited miscibility between the constituents in the active layers of solar cells affords Voc tunability. Poor physical interactions between the constituent domains within the active layers, on the other hand, result in devices that exhibit an invariant Voc that is pinned by the smallest energy level difference between the donor(s) and the acceptor(s). Our morphological studies thus support the proposed alloying model that was put forth originally.

  16. Characterization of cathode keeper wear by surface layer activation

    NASA Technical Reports Server (NTRS)

    Polk, James E.

    2003-01-01

    In this study, the erosion rates of the discharge cathode keeper in a 30 cm NSTAR configuration ion thruster were measured using a technique known as Surface Layer Activation (SLA). This diagnostic technique involves producing a radioactive tracer in a given surface by bombardment with high energy ions. The decrease in activity of the tracer material may be monitored as the surface is subjected to wear processes and correlated to a depth calibration curve, yielding the eroded depth. Analysis of the activities was achieved through a gamma spectroscopy system. The primary objectives of this investigation were to reproduce erosion data observed in previous wear studies in order to validate the technique, and to determine the effect of different engine operating parameters on erosion rate. The erosion profile at the TH 15 (23 kw) setting observed during the 8200 hour Life Demonstration Test (LDT) was reproduced. The maximum keeper erosion rate at this setting was determined to be 0.085 pm/hr. Testing at the TH 8 (1.4 kw) setting demonstrated lower erosion rates than TH 15, along with a different wear profile. Varying the keeper voltage was shown to have a significant effect on the erosion, with a positive bias with respect to cathode potential decreasing the erosion rate significantly. Accurate measurements were achieved after operating times of only 40 to 70 hours, a significant improvement over other erosion diagnostic methods.

  17. Facility and the method for MEIS analysis of layers redeposited in plasma devices

    NASA Astrophysics Data System (ADS)

    Bulgadaryan, D.; Kolodko, D.; Kurnaev, V.; Sinelnikov, D.

    2016-09-01

    The experimental facility for surface analysis by means of middle energy ion scattering (MEIS) is described. Experimental results are compared with SCATTER computer code simulation. The simulation shows the possibility to determine the thickness of very thin redeposited layers of heavy elements by keV energy hydrogen ions scattering spectroscopy.

  18. On-line thickness measurement for two-layer systems on polymer electronic devices.

    PubMed

    Grassi, Ana Perez; Tremmel, Anton J; Koch, Alexander W; El-Khozondar, Hala J

    2013-11-18

    During the manufacturing of printed electronic circuits, different layers of coatings are applied successively on a substrate. The correct thickness of such layers is essential for guaranteeing the electronic behavior of the final product and must therefore be controlled thoroughly. This paper presents a model for measuring two-layer systems through thin film reflectometry (TFR). The model considers irregular interfaces and distortions introduced by the setup and the vertical vibration movements caused by the production process. The results show that the introduction of these latter variables is indispensable to obtain correct thickness values. The proposed approach is applied to a typical configuration of polymer electronics on transparent and non-transparent substrates. We compare our results to those obtained using a profilometer. The high degree of agreement between both measurements validates the model and suggests that the proposed measurement method can be used in industrial applications requiring fast and non-contact inspection of two-layer systems. Moreover, this approach can be used for other kinds of materials with known optical parameters.

  19. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  20. SHADE: A Shape-Memory-Activated Device Promoting Ankle Dorsiflexion

    NASA Astrophysics Data System (ADS)

    Pittaccio, S.; Viscuso, S.; Rossini, M.; Magoni, L.; Pirovano, S.; Villa, E.; Besseghini, S.; Molteni, F.

    2009-08-01

    Acute post-stroke rehabilitation protocols include passive mobilization as a means to prevent contractures. A device (SHADE) that provides repetitive passive motion to a flaccid ankle by using shape memory alloy actuators could be of great help in providing this treatment. A suitable actuator was designed as a cartridge of approximately 150 × 20 × 15 mm, containing 2.5 m of 0.25 mm diameter NiTi wire. This actuator was activated by Joule’s effect employing a 7 s current input at 0.7 A, which provided 10 N through 76 mm displacement. Cooling and reset by natural convection took 30 s. A prototype of SHADE was assembled with two thermoplastic shells hinged together at the ankle and strapped on the shin and foot. Two actuators were fixed on the upper shell while an inextensible thread connected each NiTi wire to the foot shell. The passive ankle motion (passive range of motion, PROM) generated by SHADE was evaluated optoelectronically on three flaccid patients (58 ± 5 years old); acceptability was assessed by a questionnaire presented to further three flaccid patients (44 ± 11.5 years old) who used SHADE for 5 days, 30 min a day. SHADE was well accepted by all patients, produced good PROM, and caused no pain. The results prove that suitable limb mobilization can be produced by SMA actuators.

  1. Diagnostic for two-mode variable valve activation device

    SciTech Connect

    Fedewa, Andrew M

    2014-01-07

    A method is provided for diagnosing a multi-mode valve train device which selectively provides high lift and low lift to a combustion valve of an internal combustion engine having a camshaft phaser actuated by an electric motor. The method includes applying a variable electric current to the electric motor to achieve a desired camshaft phaser operational mode and commanding the multi-mode valve train device to a desired valve train device operational mode selected from a high lift mode and a low lift mode. The method also includes monitoring the variable electric current and calculating a first characteristic of the parameter. The method also includes comparing the calculated first characteristic against a predetermined value of the first characteristic measured when the multi-mode valve train device is known to be in the desired valve train device operational mode.

  2. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  3. Spirobifluorene-2,7-dicarbazole-4'-phosphine Oxide as Host for High-Performance Single-Layer Green Phosphorescent OLED Devices.

    PubMed

    Thiery, Sébastien; Tondelier, Denis; Geffroy, Bernard; Jacques, Emmanuel; Robin, Malo; Métivier, Rémi; Jeannin, Olivier; Rault-Berthelot, Joëlle; Poriel, Cyril

    2015-10-01

    A new host material based on the 2,7,4'-substituted spirobifluorene platform has been designed and used in single-layer phosphorescent OLED with very high efficiency (EQE = 13.2%) and low turn-on voltage (2.4 V). This performance is among the best reported for green single-layer PhOLEDs and may open new avenues in the design of host materials for single-layer devices.

  4. Parametric optimization in virtual prototyping environment of the control device for a robotic system used in thin layers deposition

    NASA Astrophysics Data System (ADS)

    Enescu (Balaş, M. L.; Alexandru, C.

    2016-08-01

    The paper deals with the optimal design of the control system for a 6-DOF robot used in thin layers deposition. The optimization is based on parametric technique, by modelling the design objective as a numerical function, and then establishing the optimal values of the design variables so that to minimize the objective function. The robotic system is a mechatronic product, which integrates the mechanical device and the controlled operating device.The mechanical device of the robot was designed in the CAD (Computer Aided Design) software CATIA, the 3D-model being then transferred to the MBS (Multi-Body Systems) environment ADAMS/View. The control system was developed in the concurrent engineering concept, through the integration with the MBS mechanical model, by using the DFC (Design for Control) software solution EASY5. The necessary angular motions in the six joints of the robot, in order to obtain the imposed trajectory of the end-effector, have been established by performing the inverse kinematic analysis. The positioning error in each joint of the robot is used as design objective, the optimization goal being to minimize the root mean square during simulation, which is a measure of the magnitude of the positioning error varying quantity.

  5. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability.

  6. Cell-based microfluidic device for screening anti-proliferative activity of drugs in vascular smooth muscle cells.

    PubMed

    Rodriguez-Rodriguez, R; Muñoz-Berbel, X; Demming, S; Büttgenbach, S; Herrera, M D; Llobera, A

    2012-12-01

    This paper presents a microfluidic device consisting of five parallel microchambers with integrated readout-grid for the screening of anti-proliferative activity of drugs in vascular smooth muscle cells (VSMC). A two-level SU-8 master was fabricated and replicated with poly(dimethylsiloxane), PDMS, using standard soft-lithographic methods. The relative small height (4-10 μm) of the integrated grid allowed the identification of single-cells or cell groups and the monitoring of their motility, morphology and size with time, without disturbing their proliferation pattern. This is of particular interest when considering VSMC which, apart of being crucial in the atherosclerotic process, do not proliferate in a single layer but in a non-homogenous hill and valley phenotype. The performance of the microfluidic device has been validated by comparison with conventional culturing methods, proving that the cell proliferation remains unaffected by the microchamber structure (with the integrated grid) and the experimental conditions. Finally, the microfluidic device was also used to evaluate the anti-proliferative activity of curcumin and colchicine in VSMC. With this cellular type, the anti-proliferative activity of curcumin (IC(50) =35 ± 5 μM) was found to be much lower than colchicine (IC(50) =3.2 ± 1.2 μM). These results demonstrate the good performance of the microfluidic device in the evaluation of the anti-proliferative activity (or cytotoxicity) of drugs.

  7. Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

    PubMed

    Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

    2013-05-01

    A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third.

  8. Towards NOAA Forecasts of Permafrost Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Livezey, M. M.; Jonassen, R. G.; Horsfall, F. M. C.; Jafarov, E. E.; Schaefer, K. M.

    2014-12-01

    NOAA's implementation of its 2014 Arctic Action Plan (AAP) lacks services related to permafrost change yet the Interagency Working Group on Coordination of Domestic Energy Development and Permitting in Alaska noted that warming permafrost challenges land-based development and calls for agencies to provide focused information needed by decision-makers. To address this we propose to link NOAA's existing seasonal forecasts of temperature and precipitation with a high-resolution model of the thermal state of permafrost (Jafarov et al., 2012) to provide near-term (one year ahead) forecasts of active layer thickness (ALT). Such forecasts would be an official NOAA statement of the expected thermal state of permafrost ALT in Alaska and would require: (1) long-term climate outlooks, (2) a permafrost model, (3) detailed specification of local spatial and vertical controls upon soil thermal state, (4) high-resolution vertical measurements of that thermal state, and (5) demonstration of forecast skill in pilot studies. Pilot efforts should focus on oil pipelines where the cost can be justified. With skillful forecasts, engineers could reduce costs of monitoring and repair as well as ecosystem damage by positioning equipment to more rapidly respond to predicted disruptions.

  9. Active Layer Soil Carbon and Nutrient Mineralization, Barrow, Alaska, 2012

    DOE Data Explorer

    Stan D. Wullschleger; Holly M. Vander Stel; Colleen Iversen; Victoria L. Sloan; Richard J. Norby; Mallory P. Ladd; Jason K. Keller; Ariane Jong; Joanne Childs; Deanne J. Brice

    2015-10-29

    This data set consists of bulk soil characteristics as well as carbon and nutrient mineralization rates of active layer soils manually collected from the field in August, 2012, frozen, and then thawed and incubated across a range of temperatures in the laboratory for 28 day periods in 2013-2015. The soils were collected from four replicate polygons in each of the four Areas (A, B, C, and D) of Intensive Site 1 at the Next-Generation Ecosystem Experiments (NGEE) Arctic site near Barrow, Alaska. Soil samples were coincident with the established Vegetation Plots that are located in center, edge, and trough microtopography in each polygon. Data included are 1) bulk soil characteristics including carbon, nitrogen, gravimetric water content, bulk density, and pH in 5-cm depth increments and also by soil horizon, 2) carbon, nitrogen, and phosphorus mineralization rates for soil horizons incubated aerobically (and in one case both aerobically and anaerobically) for 28 days at temperatures that included 2, 4, 8, and 12 degrees C. Additional soil and incubation data are forthcoming. They will be available when published as part of another paper that includes additional replicate analyses.

  10. Active millimeter wave detection of concealed layers of dielectric material

    NASA Astrophysics Data System (ADS)

    Bowring, N. J.; Baker, J. G.; Rezgui, N. D.; Southgate, M.; Alder, J. F.

    2007-04-01

    Extensive work has been published on millimetre wave active and passive detection and imaging of metallic objects concealed under clothing. We propose and demonstrate a technique for revealing the depth as well as the outline of partially transparent objects, which is especially suited to imaging layer materials such as explosives and drugs. The technique uses a focussed and scanned FMCW source, swept through many GHz to reveal this structure. The principle involved is that a parallel sided dielectric slab produces reflections at both its upper and lower surfaces, acting as a Fabry-Perot interferometer. This produces a pattern of alternating reflected peaks and troughs in frequency space. Fourier or Burg transforming this pattern into z-space generates a peak at the thickness of the irradiated sample. It could be argued that though such a technique may work for single uniform slabs of dielectric material, it will give results of little or no significance when the sample both scatters the incident radiation and gives erratic reflectivities due to its non-uniform thickness and permittivity . We show results for a variety of materials such as explosive simulants, powder and drugs, both alone and concealed under clothing or in a rucksack, which display strongly directional reflectivities at millimeter wavelengths, and whose location is well displayed by a varying thickness parameter as the millimetre beam is scanned across the target. With this system we find that samples can easily be detected at standoff distances of at least 4.6m.

  11. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Hinzman, L.D.; Kane, D.L.

    1987-04-01

    The hydrology of the active layer of a watershed is described. In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. Significant runoff events are few. Convective storms covering relatively small areas on the North Slope of Alaska can produce significant small-scale events in a small watershed scale,but these events are rapidly attenuated outside the basin. Data collection began in August 1984. We have continuously monitored the hydrologic, the meteorologic, and the soil`s physical conditions. Information was collected through implementation of four snowmelt runoff plots and measurements of essential microclimate parameters. Soil moisture and temperature profiles were measured adjacent to each snowmelt runoff plot, and heat flux is collected adjacent to one of these plots. Meteorological parameters were measured locally. The water content of the snowpack prior to snowmelt was measured throughout the watershed and measured daily adjacent to each plot during snowmelt. The stream draining the basin was measured regularly during the spring melt event to provide information on watershed runoff rates and the volume of snowmelt.

  12. Active layer hydrology for Imnavait Creek, Toolik, Alaska

    SciTech Connect

    Hinzman, L.D.; Kane, D.L.

    1987-04-01

    The hydrology of the active layer of a watershed is described. In the annual hydrologic cycle, snowmelt is the most significant event at Imnavait Creek located near Toolik Lake, Alaska. Precipitation that has accumulated for more than 6 months on the surface melts in a relatively short period of 7 to 10 days once sustained melting occurs. Significant runoff events are few. Convective storms covering relatively small areas on the North Slope of Alaska can produce significant small-scale events in a small watershed scale,but these events are rapidly attenuated outside the basin. Data collection began in August 1984. We have continuously monitored the hydrologic, the meteorologic, and the soil's physical conditions. Information was collected through implementation of four snowmelt runoff plots and measurements of essential microclimate parameters. Soil moisture and temperature profiles were measured adjacent to each snowmelt runoff plot, and heat flux is collected adjacent to one of these plots. Meteorological parameters were measured locally. The water content of the snowpack prior to snowmelt was measured throughout the watershed and measured daily adjacent to each plot during snowmelt. The stream draining the basin was measured regularly during the spring melt event to provide information on watershed runoff rates and the volume of snowmelt.

  13. Effects of Soil Property Uncertainty on Projected Active Layer Thickness

    NASA Astrophysics Data System (ADS)

    Harp, D. R.; Atchley, A. L.; Coon, E.; Painter, S. L.; Wilson, C. J.; Romanovsky, V. E.; Liljedahl, A.

    2014-12-01

    Uncertainty in future climate is often assumed to contribute the largest uncertainty to active layer thickness (ALT) projections. However, the impact of soil property uncertainty on these projections may be significant. In this research, we evaluate the contribution of soil property uncertainty on ALT projections at the Barrow Environmental Observatory, Alaska. The effect of variations in porosity, thermal conductivity, saturation, and water retention properties of peat and mineral soil are evaluated. The micro-topography of ice wedge polygons present at the site is included in the analysis using three 1D column models to represent polygon center, rim and trough features. The Arctic Terrestrial Simulator (ATS) is used to model multiphase thermal and hydrological processes in the subsurface. We apply the Null-Space Monte Carlo (NSMC) algorithm to identify an ensemble of soil property combinations that produce simulated temperature profiles that are consistent with temperature measurements available from the site. ALT is simulated for the ensemble of soil property combinations for four climate scenarios. The uncertainty in ALT due to soil properties within and across climate scenarios is evaluated. This work was supported by LANL Laboratory Directed Research and Development Project LDRD201200068DR and by the The Next-Generation Ecosystem Experiments (NGEE Arctic) project. NGEE-Arctic is supported by the Office of Biological and Environmental Research in the DOE Office of Science.

  14. Hole-selective and impedance characteristics of an aqueous solution-processable MoO3 layer for solution-processable organic semiconducting devices

    NASA Astrophysics Data System (ADS)

    Moon, Byung Seuk; Lee, Soo-Hyoung; Huh, Yoon Ho; Park, Byoungchoo

    2015-02-01

    We herein report an investigation of aqueous solution-processable molybdenum-oxide (MoO3) hole-selective layers fabricated for solution-processable organic semiconducting devices. A homogeneous MoO3 layer was successfully deposited via spin-coating using aqueous solutions of ammonium heptamolybdate as a MoO3 precursor. The use of the solution-processable MoO3 layer as a hole-injecting layer (HIL) on an indium-tin-oxide (ITO) anode in solution-processable organic light-emitting diodes (OLEDs) resulted in excellent device performance in terms of the brightness (maximum brightness of 37,000 cd m-2) and the efficiency (peak efficiency of 25.2 cd A-1), comparable to or better than those of a reference OLED with a conventional poly(ethylenedioxy thiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. Such good device performance is attributed to the water-processable MoO3 hole-selective layers, which allowed the formation of a high-quality film and provided good matching of the energy levels between adjacent layers with improved hole-injecting properties, impedance characteristics, and stability. Furthermore, polymer solar cells (PSCs) with a MoO3 layer used as a hole-collecting layer (HCL) showed improved power conversion efficiency (3.81%), which was higher than that obtained using the PEDOT:PSS HCL. These results clearly indicate the benefits of using a water-processable MoO3 layer, which effectively acts as a hole-selective layer on an ITO anode and provides good hole-injection/collection, electron-blocking and energy-level-matching properties, and improved stability. They, therefore, offer considerable promise as an alternative to a conventional PEDOT:PSS layer in the production of high-performance solution-processable organic semiconducting devices.

  15. Organic spintronic devices and methods for making the same

    DOEpatents

    Vardeny, Zee Valentine; Ndobe, Alex

    2014-09-23

    An organic spintronic photovoltaic device (100) having an organic electron active layer (102) functionally associated with a pair of electrodes (104, 106). The organic electron active layer (102) can include a spin active molecular radical distributed in the active layer (102) which increases spin-lattice relaxation rates within the active layer (102). The increased spin lattice relaxation rate can also influence the efficiency of OLED and charge mobility in FET devices.

  16. Laser Activated Flow Regulator for Glaucoma Drainage Devices

    PubMed Central

    Olson, Jeffrey L.; Velez-Montoya, Raul; Bhandari, Ramanath

    2014-01-01

    Purpose To assess the capabilities of a new glaucoma drainage device regulator in controlling fluid flow as well as to demonstrate that this effect may be titratable by noninvasive means. Methods A rigid eye model with two main ports was used. On the first port, we placed a saline solution column. On the second, we placed a glaucoma shunt. We then measured the flow and flow rate through the system. After placing the regulator device on the tip of the tube, we measured again with the intact membrane and with the membrane open 50% and 100%. For the ex vivo testing we used a similar setting, using a cadaveric porcine eye, we measured again the flow and flow rate. However, this time we opened the membrane gradually using laser shots. A one-way analysis of variance and a Fisher's Least Significant Difference test were used for statistical significance. We also calculated the correlation between the numbers of laser shots applied and the main outcomes. Results The flow through the system with the glaucoma drainage device regulator (membrane intact and 50% open) was statistically lower than with the membrane open 100% and without device (P < 0.05). The flow was successfully controlled by the number of laser shots applied, and showed a positive correlation (+ 0.9). The flow rate was almost doubled every 10 shots and statistically lower than without device at all time (P < 0.05). Conclusions The glaucoma drainage device regulator can be controlled noninvasively with laser, and allows titratable control of aqueous flow. Translational Relevance Initial results and evidence from this experiment will justify the initiation of in vivo animal trials with the glaucoma drainage device regulator; which brings us closer to possible human trials and the chance to significantly improve the existing technology to treat glaucoma surgically. PMID:25374772

  17. Optimization of detection device geometry for NIR spectroscopy using a three-layered model of stone fruit

    NASA Astrophysics Data System (ADS)

    Tan, Zuojun; Xie, Jing; Chen, Jianjun; Ding, Chizhu

    2016-09-01

    The influences of detection device geometry and fiber optic parameters on near infrared spectroscopy measurements were assessed using stone fruit models based on Monte Carlo simulation. The stone fruit was modeled as concentric spherical layered tissues including the skin, the flesh and the core. The choices of the detection angle, the diameter of the detection fiber, the numerical aperture, and the height of the probe were discussed. Receiving diffuse reflectance signals at detection angles in the range of 35°-50° and normalizing the detection signals by the collection area and the solid acceptance angle prior to use are suggested. Fiber probes with diameters D = 0.06 cm or 0.1 cm, NA = 0.20 or 0.30, and height h ≤ 0.8 cm are preferred. The probe deflection angle should be limited to within ±5° to guarantee measurement accuracy.

  18. Optimization of detection device geometry for NIR spectroscopy using a three-layered model of stone fruit

    NASA Astrophysics Data System (ADS)

    Tan, Zuojun; Xie, Jing; Chen, Jianjun; Ding, Chizhu

    2016-10-01

    The influences of detection device geometry and fiber optic parameters on near infrared spectroscopy measurements were assessed using stone fruit models based on Monte Carlo simulation. The stone fruit was modeled as concentric spherical layered tissues including the skin, the flesh and the core. The choices of the detection angle, the diameter of the detection fiber, the numerical aperture, and the height of the probe were discussed. Receiving diffuse reflectance signals at detection angles in the range of 35°-50° and normalizing the detection signals by the collection area and the solid acceptance angle prior to use are suggested. Fiber probes with diameters D = 0.06 cm or 0.1 cm, NA = 0.20 or 0.30, and height h ≤ 0.8 cm are preferred. The probe deflection angle should be limited to within ±5° to guarantee measurement accuracy.

  19. Optimization of the in-needle extraction device for the direct flow of the liquid sample through the sorbent layer.

    PubMed

    Pietrzyńska, Monika; Voelkel, Adam

    2014-11-01

    In-needle extraction was applied for preparation of aqueous samples. This technique was used for direct isolation of analytes from liquid samples which was achieved by forcing the flow of the sample through the sorbent layer: silica or polymer (styrene/divinylbenzene). Specially designed needle was packed with three different sorbents on which the analytes (phenol, p-benzoquinone, 4-chlorophenol, thymol and caffeine) were retained. Acceptable sampling conditions for direct analysis of liquid sample were selected. Experimental data collected from the series of liquid samples analysis made with use of in-needle device showed that the effectiveness of the system depends on various parameters such as breakthrough volume and the sorption capacity, effect of sampling flow rate, solvent effect on elution step, required volume of solvent for elution step. The optimal sampling flow rate was in range of 0.5-2 mL/min, the minimum volume of solvent was at 400 µL level. PMID:25127610

  20. Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices.

    PubMed

    Irwin, Michael D; Liu, Jun; Leever, Benjamin J; Servaites, Jonathan D; Hersam, Mark C; Durstock, Michael F; Marks, Tobin J

    2010-02-16

    In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment--effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in V(OC) from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4x enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.

  1. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  2. The effect of laser pulse duration and beam shape on the selective removal of novel thin film layers for flexible electronic devices

    NASA Astrophysics Data System (ADS)

    Moorhouse, C.; Karnakis, D. M.; Kapnopoulos, C.; Laskarakis, A.; Logothetidis, S.; Antonopoulos, G.; Mekeridis, E.

    2015-07-01

    Lightweight, flexible substrates coated with thin film layers <0.5μm thick are commonly utilized for modern electronic devices that are portable and constantly reducing in size, weight, power consumption and material cost. Patterning techniques for these thin films are required to provide device functionality and alternatives to photolithography such as direct write laser processes are particularly attractive. However, for complex devices with multiple thin layers, the quality requirements for laser scribing are extremely high, since each individual thin film layer must be patterned without damaging the underlying thin film layer(s) and also provide a suitable topography for subsequent layers to be deposited upon. Hence, the choice of the laser parameters is critical for a number of emerging thin film materials used in flexible electronic devices such as ITO, pedot:PSS, silver nanoparticle inks, amongst others. These thin films can be extremely sensitive to the thermal interaction with lasers and this report outlines the influence of laser pulse duration and beam shaping techniques on laser patterning of these thin films and the implications for laser system design.

  3. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  4. Screening of inorganic wide-bandgap p-type semiconductors for high performance hole transport layers in organic photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Ginley, David; Zakutayev, Andriy; Garcia, Andreas; Widjonarko, Nicodemus; Ndione, Paul; Sigdel, Ajaya; Parilla, Phillip; Olson, Dana; Perkins, John; Berry, Joseph

    2011-03-01

    We will report on the development of novel inorganic hole transport layers (HTL) for organic photovoltaics (OPV). All the studied materials belong to the general class of wide-bandgap p-type oxide semiconductors. Potential candidates suitable for HTL applications include SnO, NiO, Cu2O (and related CuAlO2, CuCrO2, SrCu2O4 etc) and Co3O4 (and related ZnCo2O4, NiCo2O4, MgCo2O4 etc.). Materials have been optimized by high-throughput combinatorial approaches. The thin films were deposited by RF sputtering and pulsed laser deposition at ambient and elevated temperatures. Performance of the inorganic HTLs and that of the reference organic PEDOT:PSS HTL were compared by measuring the power conversion efficiencies and spectral responses of the P3HT/PCBM- and PCDTBT/PCBM-based OPV devices. Preliminary results indicate that Co3O4-based HTLs have performance comparable to that of our previously reported NiOs and PEDOT:PSS HTLs, leading to a power conversion efficiency of about 4 percent. The effect of composition and work function of the ternary materials on their performance in OPV devices is under investigation.

  5. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly. PMID:26789206

  6. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly.

  7. A new way towards high-efficiency thermally activated delayed fluorescence devices via external heavy-atom effect

    NASA Astrophysics Data System (ADS)

    Zhang, Wenzhi; Jin, Jiangjiang; Huang, Zhi; Zhuang, Shaoqing; Wang, Lei

    2016-07-01

    Thermally activated delayed fluorescence (TADF) mechanism is a significant method that enables the harvesting of both triplet and singlet excitons for emission. However, up to now most efforts have been devoted to dealing with the relation between singlet-triplet splitting (ΔEST) and fluorescence efficiency, while the significance of spin-orbit coupling (SOC) is usually ignored. In this contribution, a new method is developed to realize high-efficiency TADF-based devices through simple device-structure optimizations. By inserting an ultrathin external heavy-atom (EHA) perturber layer in a desired manner, it provides useful means of accelerating the T1 → S1 reverse intersystem crossing (RISC) in TADF molecules without affecting the corresponding S1 → T1 process heavily. Furthermore, this strategy also promotes the utilization of host triplets through Förster mechanism during host → guest energy transfer (ET) processes, which helps to get rid of the solely dependence upon Dexter mechanism. Based on this strategy, we have successfully raised the external quantum efficiency (EQE) in 4CzPN-based devices by nearly 38% in comparison to control devices. These findings provide keen insights into the role of EHA played in TADF-based devices, offering valuable guidelines for utilizing certain TADF dyes which possess high radiative transition rate but relatively inefficient RISC.

  8. A new way towards high-efficiency thermally activated delayed fluorescence devices via external heavy-atom effect

    PubMed Central

    Zhang, Wenzhi; Jin, Jiangjiang; Huang, Zhi; Zhuang, Shaoqing; Wang, Lei

    2016-01-01

    Thermally activated delayed fluorescence (TADF) mechanism is a significant method that enables the harvesting of both triplet and singlet excitons for emission. However, up to now most efforts have been devoted to dealing with the relation between singlet-triplet splitting (ΔEST) and fluorescence efficiency, while the significance of spin-orbit coupling (SOC) is usually ignored. In this contribution, a new method is developed to realize high-efficiency TADF-based devices through simple device-structure optimizations. By inserting an ultrathin external heavy-atom (EHA) perturber layer in a desired manner, it provides useful means of accelerating the T1 → S1 reverse intersystem crossing (RISC) in TADF molecules without affecting the corresponding S1 → T1 process heavily. Furthermore, this strategy also promotes the utilization of host triplets through Förster mechanism during host → guest energy transfer (ET) processes, which helps to get rid of the solely dependence upon Dexter mechanism. Based on this strategy, we have successfully raised the external quantum efficiency (EQE) in 4CzPN-based devices by nearly 38% in comparison to control devices. These findings provide keen insights into the role of EHA played in TADF-based devices, offering valuable guidelines for utilizing certain TADF dyes which possess high radiative transition rate but relatively inefficient RISC. PMID:27439967

  9. Conformal Coating of Three-Dimensional Nanostructures via Atomic Layer Deposition for Development of Advanced Energy Storage Devices and Plasmonic Transparent Conductors

    NASA Astrophysics Data System (ADS)

    Malek, Gary A.

    Due to the prodigious amount of electrical energy consumed throughout the world, there exists a great demand for new and improved methods of generating electrical energy in a clean and renewable manner as well as finding more effective ways to store it. This enormous task is of great interest to scientists and engineers, and much headway is being made by utilizing three-dimensional (3D) nanostructured materials. This work explores the application of two types of 3D nanostructured materials toward fabrication of advanced electrical energy storage and conversion devices. The first nanostructured material consists of vertically aligned carbon nanofibers. This three-dimensional structure is opaque, electrically conducting, and contains active sites along the outside of each fiber that are conducive to chemical reactions. Therefore, they make the perfect 3D conducting nanostructured substrate for advanced energy storage devices. In this work, the details for transforming vertically aligned carbon nanofiber arrays into core-shell structures via atomic layer deposition as well as into a mesoporous manganese oxide coated supercapacitor electrode are given. Another unique type of three-dimensional nanostructured substrate is nanotextured glass, which is transparent but non-conducting. Therefore, it can be converted to a 3D transparent conductor for possible application in photovoltaics if it can be conformally coated with a conducting material. This work details that transformation as well as the addition of plasmonic gold nanoparticles to complete the transition to a 3D plasmonic transparent conductor.

  10. Grain sorting in the morphological active layer of a braided river physical model

    NASA Astrophysics Data System (ADS)

    Leduc, P.; Ashmore, P.; Gardner, J. T.

    2015-07-01

    A physical scale model of a gravel-bed braided river was used to measure vertical grain size sorting in the morphological active layer aggregated over the width of the river. This vertical sorting is important for analyzing braided river sedimentology, for numerical modeling of braided river morpho-dynamics and for measuring and predicting bed load transport rate. We define the morphological active layer as the bed material between the maximum and minimum bed elevations at a point over extended time periods sufficient for braiding processes to re-work the river bed. The vertical extent of the active layer was measured using 40 hourly high-resolution DEMs of the model river bed. An image texture algorithm was used to map bed material grain size of each DEM. Analysis of the 40 DEMs and texture maps provides data on the geometry of the morphological active layer and variation in grain size in three-dimensions. Normalizing active layer thickness and dividing into 10 sub-layers we show that all grain sizes occur with almost equal frequency in all sub-layers. Occurrence of patches and strings of coarser (or finer) material relates to preservation of particular morpho-textural features within the active layer. For numerical modeling and bed load prediction a morphological active layer that is fully mixed with respect to grain size is a reliable approximation.

  11. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

    PubMed Central

    2013-01-01

    To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

  12. Impact of optical antennas on active optoelectronic devices.

    PubMed

    Bonakdar, Alireza; Mohseni, Hooman

    2014-10-01

    Remarkable progress has been made in the fabrication and characterization of optical antennas that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental evidence of the dramatic improvements that can be achieved by enhancing the light-matter interaction via an optical antenna in both photon-emitting and -detecting devices. In addition, integration of optical antennas with optoelectronic devices can lead to the realization of highly compact multifunctional platforms for future integrated photonics, such as low-cost lab-on-chip systems. In this review paper, we further focus on the effect of optical antennas on the detectivity of infrared photodetectors. One particular finding is that the antenna can have a dual effect on the specific detectivity, while it can elevate light absorption efficiency of sub-wavelength detectors, it can potentially increase the noise of the detectors due to the enhanced spontaneous emission rate. In particular, we predict that the detectivity of interband photon detectors can be negatively affected by the presence of optical antennas across a wide wavelength region covering visible to long wavelength infrared bands. In contrast, the detectivity of intersubband detectors could be generally improved with a properly designed optical antenna.

  13. Passive and active sol-gel materials and devices

    NASA Astrophysics Data System (ADS)

    Andrews, Mark P.; Najafi, S. Iraj

    1997-07-01

    This paper examines sol-gel materials for photonics in terms of partnerships with other material contenders for processing optical devices. The discussion in four sections identifies semiconductors, amorphous and crystalline inorganic dielectrics, and amorphous and crystalline organic dielectrics as strategic agents in the rapidly evolving area of materials and devices for data communications and telecommunications. With Zyss, we trace the hierarchical lineage that connects molecular hybridization (chemical functionality), through supramolecular hybridization (collective properties and responses), to functional hybridization (device and system level constructs). These three concepts thread their way through discussions of the roles sol-gel glasses might be anticipated to assume in a photonics marketplace. We assign a special place to glass integrated optics and show how high temperature consolidated sol-gel derived glasses fit into competitive glass fabrication technologies. Low temperature hybrid sol-gel glasses that combine attractive features of organic polymers and inorganic glasses are considered by drawing on examples of our own new processes for fabricating couplers, power splitters, waveguides and gratings by combining chemical synthesis and sol-gel processing with simple photomask techniques.

  14. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

    NASA Astrophysics Data System (ADS)

    Deleruyelle, D.; Putero, M.; Ouled-Khachroum, T.; Bocquet, M.; Coulet, M.-V.; Boddaert, X.; Calmes, C.; Muller, C.

    2013-01-01

    This paper shows that the well-know chalcogenide Ge2Sb2Te5 (GST) in its amorphous state may be advantageously used as solid electrolyte material to fabricate Conductive-Bridge Random Access Memory (CBRAM) devices. GST layer was sputtered on preliminary inkjet-printed silver lines acting as active electrode on either silicon or plastic substrates. Whatever the substrate, the resistance switching is unambiguously attested at a nanoscale by means of conductive-atomic force microscopy (C-AFM) using a Pt-Ir coated tip on the GST surface acting as a passive electrode. The resistance change is correlated to the appearance or disappearance of concomitant hillocks and current spots at the surface of the GST layer. This feature is attributed to the formation/dissolution of a silver-rich protrusion beneath the AFM tip during set/reset operation. Beside, this paper constitutes a step toward the elaboration of crossbar memory arrays on flexible substrates since CBRAM operations were demonstrated on W/GST/Ag crossbar memory cells obtained from an heterogeneous fabrication process combining physical deposition and inkjet-printing.

  15. Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer.

    PubMed

    Xu, Wei; Ji, Wenyu; Jing, Pengtao; Yuan, Xi; Wang, Y A; Xiang, Weidong; Zhao, Jialong

    2014-02-01

    We have demonstrated an efficient inverted CdSe/CdS/ZnS core/shell quantum-dot light-emitting device (QD-LED) using a solution-processed sol-gel TiO2 and ZnO nanoparticle composite layer as an electron-injection layer with controllable morphology and investigated the electroluminescence mechanism. The introduction of the ZnO layer can lead to the formation of spin-coated uniform QD films and fabrication of high-luminance QD-LEDs. The TiO2 layer improves the balance of charge injection due to its lower electron mobility relative to the ZnO layer. These results offer a practicable platform for the realization of a trade-off between the luminance and efficiency in the inverted QD-LEDs with TiO2/ZnO composites as the electron contact layer. PMID:24487831

  16. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  17. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1-xGaxAs channel capping layer

    NASA Astrophysics Data System (ADS)

    Huang, Cheng-Hao; Li, Yiming

    2015-06-01

    In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor) devices with a channel capping layer. The impacts of thickness and gallium (Ga) concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1-xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF) resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  18. Effects of spatial variation of skull and cerebrospinal fluid layers on optical mapping of brain activities

    NASA Astrophysics Data System (ADS)

    Wang, Shuping; Shibahara, Nanae; Kuramashi, Daishi; Okawa, Shinpei; Kakuta, Naoto; Okada, Eiji; Maki, Atsushi; Yamada, Yukio

    2010-07-01

    In order to investigate the effects of anatomical variation in human heads on the optical mapping of brain activity, we perform simulations of optical mapping by solving the photon diffusion equation for layered-models simulating human heads using the finite element method (FEM). Particularly, the effects of the spatial variations in the thicknesses of the skull and cerebrospinal fluid (CSF) layers on mapping images are investigated. Mapping images of single active regions in the gray matter layer are affected by the spatial variations in the skull and CSF layer thicknesses, although the effects are smaller than those of the positions of the active region relative to the data points. The increase in the skull thickness decreases the sensitivity of the images to active regions, while the increase in the CSF layer thickness increases the sensitivity in general. The images of multiple active regions are also influenced by their positions relative to the data points and by their depths from the skin surface.

  19. Emerging Vocabulary Learning: From a Perspective of Activities Facilitated by Mobile Devices

    ERIC Educational Resources Information Center

    Hu, Zengning

    2013-01-01

    This paper examines the current mobile vocabulary learning practice to discover how far mobile devices are being used to support vocabulary learning. An activity-centered perspective is undertaken, with the consideration of new practice against existing theories of learning activities including behaviorist activities, constructivist activities,…

  20. Layer-by-layer engineered nanocapsules of curcumin with improved cell activity.

    PubMed

    Kittitheeranun, Paveenuch; Sajomsang, Warayuth; Phanpee, Sarunya; Treetong, Alongkot; Wutikhun, Tuksadon; Suktham, Kunat; Puttipipatkhachorn, Satit; Ruktanonchai, Uracha Rungsardthong

    2015-08-15

    Nanocarriers based on electrostatic Layer-by-layer (LbL) assembly of CaCO3 nanoparticles (CaCO3 NPs) was investigated. These inorganic nanoparticles was used as templates to construct nanocapsules made from films based on two oppositely charged polyelectrolytes, poly(diallyldimethylammonium chloride), and poly (sodium 4-styrene-sulfonate sodium salt), followed by core dissolution. The naked CaCO3 NPs, CaCO3 NPs coated with the polyelectrolytes and hollow nanocapsules were found with hexagonal shape with average sizes of 350-400 nm. A reversal of the surface charge between positive to negative zeta potential values was found, confirming the adsorption of polyelectrolytes. The loading efficiency and release of curcumin were controlled by the hydrophobic interactions between the drug and the polyelectrolyte matrix of the hollow nanocapsules. The quantity of curcumin released from hollow nanocapsules was found to increase under acidic environments, which is a desirable for anti-cancer drug delivery. The hollow nanocapsules were found to localize in the cytoplasm and nucleus compartment of Hela cancer cells after 24 h of incubation. Hollow nanocapsules were non-toxic to human fibroblast cells. Furthermore, curcumin loaded hollow nanocapsules exhibited higher in vitro cell inhibition against Hela cells than that of free curcumin, suggesting that polyelectrolyte based-hollow nanocapsules can be utilized as new carriers for drug delivery. PMID:26143232

  1. Study of electronicaly active defects in GaAlAs:Sn devices and their role in degradation

    NASA Astrophysics Data System (ADS)

    Paviot, J.-L.

    The physical properties of deep levels in Sn-doped Ga(1-x)Al(x)As layers (heterostructures that are intended for the design of solar cells working in conditions of solar-ray concentration) are characterized. Samples were made by liquid-phase epitaxy (x = 0-0.6) on a GaAs substrate. A reliable technique for the fabrication of high-quality Schottky diodes, where the ohmic contact is annealed by a pulsed electron beam, is described. The electronically active centers were investigated by current and capacitance transient spectroscopy. It is shown that tin is responsible for the formation of DX centers in the layer, associated with complex centers arising around the impurity in the lattice. Aging measurments performed on double-heterostructure optoelectronic transducers fabricated using liquid-phase epitaxy indicate that tin plays an important role in the degradation of such devices.

  2. Nanostructure and strain effects in active thin films for novel electronic device applications

    NASA Astrophysics Data System (ADS)

    Yuan, Zheng

    2007-12-01

    There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the

  3. The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

    NASA Astrophysics Data System (ADS)

    Bovill, E.; Scarratt, N.; Griffin, J.; Yi, H.; Iraqi, A.; Buckley, A. R.; Kingsley, J. W.; Lidzey, D. G.

    2015-02-01

    We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC70BM, and incorporated the different HTL materials PEDOT:PSS, MoOx and V2O5. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T80 lifetime of 14 500 h.

  4. The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

    SciTech Connect

    Bovill, E.; Scarratt, N.; Griffin, J.; Buckley, A. R.; Lidzey, D. G.; Yi, H.; Iraqi, A.; Kingsley, J. W.

    2015-02-16

    We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC{sub 70}BM, and incorporated the different HTL materials PEDOT:PSS, MoO{sub x} and V{sub 2}O{sub 5}. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T{sub 80} lifetime of 14 500 h.

  5. Silver ions/ovalbumin films layer-by-layer self-assembled polyacrylonitrile nanofibrous mats and their antibacterial activity.

    PubMed

    Song, Rukun; Yan, Jinjiao; Xu, Shasha; Wang, Yuntao; Ye, Ting; Chang, Jing; Deng, Hongbing; Li, Bin

    2013-08-01

    The CN groups of polyacrylonitrile (PAN) can strongly adsorb silver ions. The possibility of using this attraction as a layer-by-layer (LBL) self-assembly driving force was investigated. Firstly, the surface of the PAN nanofibrous mats was modified by silver ions to make sure it was positively charged. Then oppositely charged ovalbumin (OVA) and silver ions in aqueous media were alternatively deposited onto the surface of the obtained composite mats by layer-by-layer self-assembly technique. The morphology of the LBL films coating mats was observed by field emission scanning electron microscope (FE-SEM). The deposition of silver ions and OVA was confirmed by X-ray photoelectron spectroscopy (XPS) and wide-angle X-ray diffraction (XRD). The thermal degradation properties were investigated by thermo-gravimetric analysis (TGA). Besides these, the cytotoxicity and antibacterial activity of the prepared mats were studied via flow cytometry (FCM) and inhibition zone test, respectively. The results showed that the composite mats after LBL self-assembly processing exhibited improved thermal stability, slightly decreased cytotoxicity, and excellent antibacterial activity against Escherichia coil and Staphylococcus aureus. PMID:23563300

  6. Feasibility of using a compact elliptical device to increase energy expenditure during sedentary activities

    PubMed Central

    Rovniak, Liza S.; Denlinger, LeAnn; Duveneck, Ellen; Sciamanna, Christopher N.; Kong, Lan; Freivalds, Andris; Ray, Chester A.

    2013-01-01

    Objectives This study aimed to evaluate the feasibility of using a compact elliptical device to increase energy expenditure during sedentary activities. A secondary aim was to evaluate if two accelerometers attached to the elliptical device could provide reliable and valid assessments of participants’ frequency and duration of elliptical device use. Design Physically inactive adults (n = 32, age range = 25–65) were recruited through local advertisements and selected using stratified random sampling based on sex, body mass index (BMI), and age. Methods Indirect calorimetry was used to assess participants’ energy expenditure while seated and while using the elliptical device at a self-selected intensity level. Participants also self-reported their interest in using the elliptical device during sedentary activities. Two Actigraph GT3X accelerometers were attached to the elliptical device to record time-use patterns. Results Participants expended a median of 179.1 kilocalories per hour while using the elliptical device (range = 108.2–269.0), or a median of 87.9 more kilocalories (range = 19.7–178.6) than they would expend per hour of sedentary sitting. Participants reported high interest in using the elliptical device during TV watching and computer work, but relatively low interest in using the device during office meetings. Women reported greater interest in using the elliptical device than men. The two accelerometers recorded identical time-use patterns on the elliptical device and demonstrated concurrent validity with time-stamped computer records. Conclusions Compact elliptical devices could increase energy expenditure during sedentary activities, and may provide proximal environmental cues for increasing energy expenditure across multiple life domains. PMID:24035273

  7. Power Conversion Efficiency and Device Stability Improvement of Inverted Perovskite Solar Cells by Using a ZnO:PFN Composite Cathode Buffer Layer.

    PubMed

    Jia, Xiaorui; Zhang, Lianping; Luo, Qun; Lu, Hui; Li, Xueyuan; Xie, Zhongzhi; Yang, Yongzhen; Li, Yan-Qing; Liu, Xuguang; Ma, Chang-Qi

    2016-07-20

    We have demonstrated in this article that both power conversion efficiency (PCE) and performance stability of inverted planar heterojunction perovskite solar cells can be improved by using a ZnO:PFN nanocomposite (PFN: poly[(9,9-bis(3'-(N,N-dimethylamion)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)-fluorene]) as the cathode buffer layer (CBL). This nanocomposite could form a compact and defect-less CBL film on the perovskite/PC61BM surface (PC61BM: phenyl-C61-butyric acid methyl ester). In addition, the high conductivity of the nanocomposite layer makes it works well at a layer thickness of 150 nm. Both advantages of the composite layer are helpful in reducing interface charge recombination and improving device performance. The power conversion efficiency (PCE) of the best ZnO:PFN CBL based device was measured to be 12.76%, which is higher than that of device without CBL (9.00%), or device with ZnO (7.93%) or PFN (11.30%) as the cathode buffer layer. In addition, the long-term stability is improved by using ZnO:PFN composite cathode buffer layer when compare to that of the reference cells. Almost no degradation of open circuit voltage (VOC) and fill factor (FF) was found for the device having ZnO:PFN, suggesting that ZnO:PFN is able to stabilize the interface property and consequently improve the solar cell performance stability. PMID:27349330

  8. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal-oxide-semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm-2 · eV-1) and gate leakage current (9.32 × 10-5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  9. Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices

    SciTech Connect

    Lee, Albert Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov; Kim, Hoon; Choi, Kisik; Besser, Paul

    2014-01-15

    As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ∼4.6 eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

  10. Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

    SciTech Connect

    Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.; Heindl, Ranko

    2014-05-26

    In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power present in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.

  11. Imaging of the native inversion layer in Silicon-On-Insulator wafers via Scanning Surface Photovoltage: Implications for RF device performance

    NASA Astrophysics Data System (ADS)

    Dahanayaka, Daminda; Wong, Andrew; Kaszuba, Philip; Moszkowicz, Leon; Slinkman, James; IBM SPV Lab Team

    2014-03-01

    Silicon-On-Insulator (SOI) technology has proved beneficial for RF cell phone technologies, which have equivalent performance to GaAs technologies. However, there is evident parasitic inversion layer under the Buried Oxide (BOX) at the interface with the high resistivity Si substrate. The latter is inferred from capacitance-voltage measurements on MOSCAPs. The inversion layer has adverse effects on RF device performance. We present data which, for the first time, show the extent of the inversion layer in the underlying substrate. This knowledge has driven processing techniques to suppress the inversion.

  12. Charge trapping and luminance mechanisms of organic light-emitting devices with a 5,6,11,12-tetraphenylnaphthacene emission layer.

    PubMed

    Park, Su Hyeong; Lee, Dae Uk; Kim, Tae Whan

    2011-08-01

    The electrical and the optical properties of the organic light-emitting devices fabricated utilizing a 5,6,11,12-tetraphenylnaphthacene (rubrene) emission layer (EML) were investigated to clarify their charge trapping and luminance mechanisms. The increase in the thickness of the rubrene EML extended the width of the recombination zone, resulting in the enhancement of the efficiency and in the variation of the shoulder peak intensity of the electroluminescence spectra. The charge trapping and luminance mechanisms were affected by the total thickness of the rubrene layer, regardless of the existence of the barrier layers. The charge trapping and luminance mechanisms are described on the basis of the experimental results. PMID:22103164

  13. MEMS Device Being Developed for Active Cooling and Temperature Control

    NASA Technical Reports Server (NTRS)

    Moran, Matthew E.

    2001-01-01

    High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

  14. Water Pollution Scrubber Activity Simulates Pollution Control Devices.

    ERIC Educational Resources Information Center

    Kennedy, Edward C., III; Waggoner, Todd C.

    2003-01-01

    A laboratory activity caused students to think actively about water pollution. The students realized that it would be easier to keep water clean than to remove pollutants. They created a water scrubbing system allowing them to pour water in one end and have it emerge clean at the other end. (JOW)

  15. Fabric-based integrated energy devices for wearable activity monitors.

    PubMed

    Jung, Sungmook; Lee, Jongsu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

    2014-09-01

    A wearable fabric-based integrated power-supply system that generates energy triboelectrically using human activity and stores the generated energy in an integrated supercapacitor is developed. This system can be utilized as either a self-powered activity monitor or as a power supply for external wearable sensors. These demonstrations give new insights for the research of wearable electronics. PMID:25070873

  16. Highly sensitive pyrogen detection on medical devices by the monocyte activation test.

    PubMed

    Stang, Katharina; Fennrich, Stefan; Krajewski, Stefanie; Stoppelkamp, Sandra; Burgener, Iwan Anton; Wendel, Hans-Peter; Post, Marcell

    2014-04-01

    Pyrogens are components of microorganisms, like bacteria, viruses or fungi, which can induce a complex inflammatory response in the human body. Pyrogen contamination on medical devices prior operation is still critical and associated with severe complications for the patients. The aim of our study was to develop a reliable test, which allows detection of pyrogen contamination on the surface of medical devices. After in vitro pyrogen contamination of different medical devices and incubation in a rotation model, the human whole blood monocyte activation test (MAT), which is based on an IL-1β-specific ELISA, was employed. Our results show that when combining a modified MAT protocol and a dynamic incubation system, even smallest amounts of pyrogens can be directly detected on the surface of medical devices. Therefore, screening of medical devices prior clinical application using our novel assay, has the potential to significantly reduce complications associated with pyrogen-contaminated medical devices.

  17. 78 FR 41065 - Agency Information Collection Activities; Proposed Collection; Comment Request; Medical Devices...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-09

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration Agency Information Collection Activities; Proposed Collection; Comment Request; Medical Devices; Third-Party Review Under the Food and Drug...

  18. Electro- and photoluminescence imaging as fast screening technique of the layer uniformity and device degradation in planar perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Soufiani, Arman Mahboubi; Tayebjee, Murad J. Y.; Meyer, Steffen; Ho-Baillie, Anita; Sung Yun, Jae; MacQueen, Rowan W.; Spiccia, Leone; Green, Martin A.; Hameiri, Ziv

    2016-07-01

    In this study, we provide insights into planar structure methylammonium lead triiodide (MAPbI3) perovskite solar cells (PSCs) using electroluminescence and photoluminescence imaging techniques. We demonstrate the strength of these techniques in screening relatively large area PSCs, correlating the solar cell electrical parameters to the images and visualizing the features which contribute to the variation of the parameters extracted from current density-voltage characterizations. It is further used to investigate one of the major concerns about perovskite solar cells, their long term stability and aging. Upon storage under dark in dry glovebox condition for more than two months, the major parameter found to have deteriorated in electrical performance measurements was the fill factor; this was elucidated via electroluminescence image comparisons which revealed that the contacts' quality degrades. Interestingly, by deploying electroluminescence imaging, the significance of having a pin-hole free active layer is demonstrated. Pin-holes can grow over time and can cause degradation of the active layer surrounding them.

  19. Development of a novel neutron detection technique by using a boron layer coating a Charge Coupled Device

    SciTech Connect

    Blostein, Juan Jerónimo; Estrada, Juan; Tartaglione, Aureliano; Sofo haro, Miguel; Fernández Moroni, Guillermo; Cancelo, Gustavo

    2015-01-19

    This article describes the design features and the first test measurements obtained during the installation of a novel high resolution 2D neutron detection technique. The technique proposed in this work consists of a boron layer (enriched in ${^{10}}$B) placed on a scientific Charge Coupled Device (CCD). After the nuclear reaction ${^{10}}$B(n,$\\alpha$)${^{7}}$Li, the CCD detects the emitted charge particles thus obtaining information on the neutron absorption position. The above mentioned ionizing particles, with energies in the range 0.5-5.5 MeV, produce a plasma effect in the CCD which is recorded as a circular spot. This characteristic circular shape, as well as the relationship observed between the spot diameter and the charge collected, is used for the event recognition, allowing the discrimination of undesirable gamma events. We present the first results recently obtained with this technique, which has the potential to perform neutron tomography investigations with a spatial resolution better than that previously achieved. Numerical simulations indicate that the spatial resolution of this technique will be about 15 $\\mu$m, and the intrinsic detection efficiency for thermal neutrons will be about 3 %. We compare the proposed technique with other neutron detection techniques and analyze its advantages and disadvantages.

  20. Heat-activated cooling devices: A guidebook for general audiences

    SciTech Connect

    Wiltsee, G.

    1994-02-01

    Heat-activated cooling is refrigeration or air conditioning driven by heat instead of electricity. A mill or processing facility can us its waste fuel to air condition its offices or plant; using waste fuel in this way can save money. The four basic types of heat-activated cooling systems available today are absorption cycle, desiccant system, steam jet ejector, and steam turbine drive. Each is discussed, along with cool storage and biomass boilers. Steps in determining the feasibility of heat-activated cooling are discussed, as are biomass conversion, system cost and integration, permits, and contractor selection. Case studies are given.

  1. High temperature microbial activity in upper soil layers.

    PubMed

    Santana, M M; Gonzalez, J M

    2015-11-01

    Biomineralization at high temperatures in upper soil layers has been largely ignored, although desertification and global warming have led to increasing areas of soils exposed to high temperatures. Recent publications evidenced thermophilic bacteria ubiquity in soils as viable cells, and their role in nutrient cycling and seedling development. High temperature events, frequently observed at medium and low latitudes, locate temporal niches for thermophiles to grow in soils. There, at temperatures inhibitory for common mesophiles, thermophilic bacteria could perform biogeochemical reactions important to the soil food web. Nutrient cycling analyses in soils at medium and low latitudes would benefit from considering the potential role of thermophiles.

  2. Measurements of the PLT and PDX device activation

    SciTech Connect

    Stavely, J.; Barnes, C.W.; Chrien, R.E.; Strachan, J.D.

    1981-09-01

    Measurements of the activation levels around the PLT and PDX tokamaks have been made using a Ge(Li) gamma spectrometer and a Geiger counter. The activation results from radiation induced in the plasma by 14 MeV neutrons from the d(t,n)..cap alpha.. fusion reaction, 14.7 MeV protons from the d(/sup 3/He,p)..cap alpha.. fusion reaction, 10 ..-->.. 20 MeV hard x-rays from runaway electron induced bremmstrahlung, and 2.5 MeV neutrons from the d(d,n)/sup 3/He fusion reaction. The magnitude of the activation is compared to that predicted for PDX on the basis of one-dimensional activation codes.

  3. Grain sorting in the morphological active layer of a braided river physical model

    NASA Astrophysics Data System (ADS)

    Leduc, P.; Ashmore, P.; Gardner, J. T.

    2015-12-01

    A physical scale model of a gravel-bed braided river was used to measure vertical grain size sorting in the morphological active layer aggregated over the width of the river. This vertical sorting is important for analyzing braided river sedimentology, for numerical modeling of braided river morphodynamics, and for measuring and predicting bedload transport rate. We define the morphological active layer as the bed material between the maximum and minimum bed elevations at a point over extended time periods sufficient for braiding processes to rework the river bed. The vertical extent of the active layer was measured using 40 hourly high-resolution DEMs (digital elevation models) of the model river bed. An image texture algorithm was used to map bed material grain size of each DEM. Analysis of the 40 DEMs and texture maps provides data on the geometry of the morphological active layer and variation in grain size in three dimensions. By normalizing active layer thickness and dividing into 10 sublayers, we show that all grain sizes occur with almost equal frequency in all sublayers. Occurrence of patches and strings of coarser (or finer) material relates to preservation of particular morpho-textural features within the active layer. For numerical modeling and bedload prediction, a morphological active layer that is fully mixed with respect to grain size is a reliable approximation.

  4. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    SciTech Connect

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  5. SEMICONDUCTOR DEVICES: Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate

    NASA Astrophysics Data System (ADS)

    Wensuo, Chen; Bo, Zhang; Zhaoji, Li; Jian, Fang; Xu, Guan

    2010-06-01

    A new lateral insulated-gate bipolar transistor (LIGBT) with a SiO2 shielded layer anode on SOI substrate is proposed and discussed. Compared to the conventional LIGBT, the proposed device offers an enhanced conductivity modulation effect due to the SiO2 shielded layer anode structure which can be formed by SIMOX technology. Simulation results show that, for the proposed LIGBT, during the conducting state, the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT; the conducting current is up to 37% larger than that of the conventional one. The enhanced conductivity modulation effect by SiO2 shielded layer anode does not sacrifice other characteristics of the device, such as breakdown and switching, but is compatible with other optimized technologies.

  6. An adaptive Hidden Markov Model for activity recognition based on a wearable multi-sensor device

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Human activity recognition is important in the study of personal health, wellness and lifestyle. In order to acquire human activity information from the personal space, many wearable multi-sensor devices have been developed. In this paper, a novel technique for automatic activity recognition based o...

  7. Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

    NASA Technical Reports Server (NTRS)

    Zhang, Ting-Jun; Li, Shu-Sun

    2003-01-01

    The objective of this project is to map the spatial variation of the active layer over the arctic permafrost in terms of two parameters: (i) timing and duration of thaw period and (ii) differential frost heave and thaw settlement of the active layer. To achieve this goal, remote sensing, numerical modeling, and related field measurements are required. Tasks for the University of Colorado team are to: (i) determine the timing of snow disappearance in spring through changes in surface albedo (ii) simulate the freezing and thawing processes of the active layer and (iii) simulate the impact of snow cover on permafrost presence.

  8. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  9. Optical-to-optical interface device. [consisting of two transparent electrodes on glass substrates that enclose thin film photoconductor and thin layer of nematic liquid crystal

    NASA Technical Reports Server (NTRS)

    Jacobson, A. D.

    1973-01-01

    Studies were conducted on the performance of a photoactivated dc liquid crystal light valve. The dc light valve is a thin film device that consists of two transparent electrodes, deposited on glass substrates, that enclose a thin film photoconductor (cadmium sulfide) and a thin layer of a nematic liquid crystal that operates in the dynamic scattering mode. The work was directed toward application of the light valve to high resolution non-coherent light to coherent light image conversion. The goal of these studies was to improve the performance and quality of the already existing dc light valve device and to evaluate quantitatively the properties and performance of the device as they relate to the coherent optical data processing application. As a result of these efforts, device sensitivity was improved by a factor of ten, device resolution was improved by a factor of three, device lifetime was improved by two-orders of magnitude, undesirable secondary liquid crystal scattering effects were eliminated, the scattering characteristics of the liquid crystal were thoroughly documented, the cosmetic quality of the devices was dramatically improved, and the performance of the device was fully documented.

  10. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  11. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  12. Orexin-dependent activation of layer VIb enhances cortical network activity and integration of non-specific thalamocortical inputs.

    PubMed

    Hay, Y Audrey; Andjelic, Sofija; Badr, Sammy; Lambolez, Bertrand

    2015-11-01

    Neocortical layer VI is critically involved in thalamocortical activity changes during the sleep/wake cycle. It receives dense projections from thalamic nuclei sensitive to the wake-promoting neuropeptides orexins, and its deepest part, layer VIb, is the only cortical lamina reactive to orexins. This convergence of wake-promoting inputs prompted us to investigate how layer VIb can modulate cortical arousal, using patch-clamp recordings and optogenetics in rat brain slices. We found that the majority of layer VIb neurons were excited by nicotinic agonists and orexin through the activation of nicotinic receptors containing α4-α5-β2 subunits and OX2 receptor, respectively. Specific effects of orexin on layer VIb neurons were potentiated by low nicotine concentrations and we used this paradigm to explore their intracortical projections. Co-application of nicotine and orexin increased the frequency of excitatory post-synaptic currents in the ipsilateral cortex, with maximal effect in infragranular layers and minimal effect in layer IV, as well as in the contralateral cortex. The ability of layer VIb to relay thalamocortical inputs was tested using photostimulation of channelrhodopsin-expressing fibers from the orexin-sensitive rhomboid nucleus in the parietal cortex. Photostimulation induced robust excitatory currents in layer VIa neurons that were not pre-synaptically modulated by orexin, but exhibited a delayed, orexin-dependent, component. Activation of layer VIb by orexin enhanced the reliability and spike-timing precision of layer VIa responses to rhomboid inputs. These results indicate that layer VIb acts as an orexin-gated excitatory feedforward loop that potentiates thalamocortical arousal.

  13. Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

    NASA Astrophysics Data System (ADS)

    Huang, Huolin; Liang, Yung Chii

    2015-12-01

    The formation of partial AlGaN trench recess filled with multiple fluorinated gate dielectric layers as metal-insulator-semiconductor (MIS) gate structure for GaN-based HEMT power devices is designed, fabricated and experimentally verified. The approach realizes the device normally-off operational mode and at the same time is able to preserve the good mobility in the 2DEG channel for a maximum on-state current. Experimental measurements on the fabricated MIS-HEMT devices indicate a high gate threshold voltage (Vth) at around 5 V and a very low gate leakage current at pA/mm level. This proposed gate structure provides very promising properties for GaN-based power semiconductor devices in future power electronics switching applications.

  14. Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

    NASA Astrophysics Data System (ADS)

    Yuan, Yongbo; Lian, Jiarong; Li, Shuang; Zhou, Xiang

    2008-11-01

    Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq3) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq3 as the mass ratio of Alq3 to ADN was varied from 1 to 50%. The devices with an optimal Alq3 mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A-1 and 2.7% at a luminance of 1371 cd m-2, which is improved by a factor of 2.2 compared with 4.1 cd A-1 and 1.2% at a luminance of 3267 cd m-2 for conventional devices with the neat Alq3 as the EML.

  15. The Role of Organic Capping Layers of Platinum Nanoparticles in Catalytic Activity of CO Oxidation

    SciTech Connect

    Park, Jeong Y.; Aliaga, Cesar; Renzas, J. Russell; Lee, Hyunjoo; Somorjai, Gabor A.

    2008-12-17

    We report the catalytic activity of colloid platinum nanoparticles synthesized with different organic capping layers. On the molecular scale, the porous organic layers have open spaces that permit the reactant and product molecules to reach the metal surface. We carried out CO oxidation on several platinum nanoparticle systems capped with various organic molecules to investigate the role of the capping agent on catalytic activity. Platinum colloid nanoparticles with four types of capping layer have been used: TTAB (Tetradecyltrimethylammonium Bromide), HDA (hexadecylamine), HDT (hexadecylthiol), and PVP (poly(vinylpyrrolidone)). The reactivity of the Pt nanoparticles varied by 30%, with higher activity on TTAB coated nanoparticles and lower activity on HDT, while the activation energy remained between 27-28 kcal/mol. In separate experiments, the organic capping layers were partially removed using ultraviolet light-ozone generation techniques, which resulted in increased catalytic activity due to the removal of some of the organic layers. These results indicate that the nature of chemical bonding between organic capping layers and nanoparticle surfaces plays a role in determining the catalytic activity of platinum colloid nanoparticles for carbon monoxide oxidation.

  16. Application of Satellite SAR Imagery in Mapping the Active Layer of Arctic Permafrost

    NASA Technical Reports Server (NTRS)

    Li, Shu-Sun; Romanovsky, V.; Lovick, Joe; Wang, Z.; Peterson, Rorik

    2003-01-01

    A method of mapping the active layer of Arctic permafrost using a combination of conventional synthetic aperture radar (SAR) backscatter and more sophisticated interferometric SAR (INSAR) techniques is proposed. The proposed research is based on the sensitivity of radar backscatter to the freeze and thaw status of the surface soil, and the sensitivity of INSAR techniques to centimeter- to sub-centimeter-level surface differential deformation. The former capability of SAR is investigated for deriving the timing and duration of the thaw period for surface soil of the active layer over permafrost. The latter is investigated for the feasibility of quantitative measurement of frost heaving and thaw settlement of the active layer during the freezing and thawing processes. The resulting knowledge contributes to remote sensing mapping of the active layer dynamics and Arctic land surface hydrology.

  17. Do active safety-needle devices cause spatter contamination?

    PubMed

    Roff, M; Basu, S; Adisesh, A

    2014-03-01

    Exposure to blood and body fluids is an occupational hazard in healthcare. Although the potential for blood-borne virus transmission through needlestick injury has been widely studied, the risk of this occurring through spatter contamination from safety-needle syringes is not well understood. This report examines this risk from three commonly used safety needles and suggests that this presents a new and significant hazard. Further work should be commissioned to quantify this hazard and determine which type of safety needle would minimize spatter contamination following syringe discharge and safety activation.

  18. Dynamics of the Thermal State of Active Layer at the Alaska North Slope and Northern Yakutia

    NASA Astrophysics Data System (ADS)

    Kholodov, A. L.; Romanovsky, V. E.; Marchenko, S.; Shiklomanov, N. I.; Fedorov-Davydov, D.

    2010-12-01

    Dynamics of the active layer is one of the most important indexes, reflecting permafrost response to the modern climate changes. Monitoring of active layer thickness dynamics is the main goal of CALM (Circumpolar Active Layer Monitoring) project. But, from different points of view, it is very important to know not only maximal depth of seasonal thawing but also dynamics of thermal field of active layer and duration of its staying in the unfrozen state. Current research was aimed on the analyzing data of temperature measurements have been done during the more then 10 years at the North Slope of Brooks Range (Alaska) and 2 years at the selected sites at the Northern Yakutia (Russia) and its comparison with the 17 to 10 years records of active layer thickness dynamics at the corresponding sites (http://www.udel.edu/Geography/calm/data/north.html). The area of investigation characterized by the typical tundra landscape and different kinds of micro topography. Reported observation sites located at the latitudinal range from 68.5 to 70.3N in Alaska and 70.5 to 71.75N in the Northern Yakutia. Observation have been done using the 1 meter long MRC probe with 11 sensors (every 10 cm) and single Campbell SCI A107 sensors in Alaska and 2-channel HOBO U23 data loggers with TMC-HD thermistors in the Northern Yakutia. Analyses of CALM data show what most observation sites in Alaska (except located near the Brooks Range and at the Arctic Ocean coast) do not subjected to the significant sustainable changes of active layer thickness over the last 10 years. At the same time active layer thickness at the Yakutian sites was increasing. Temperature observations show decreasing of the mean annual temperature at the average depth of active layer bottom at the Alaskan sites. But, because of general trend to increasing of period of thawing it does not lead to the decreasing of active layer thickness. Recent equipment deployment at the Tiksi and Allaikha sites (Northern Yakutia) does not

  19. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  20. Optical electric fields as wavelength function within active layer of graphene/Si heterojunction solar cell – An analysis

    SciTech Connect

    Rosikhin, Ahmad Winata, Toto

    2015-09-30

    The optical electric field characteristics of graphene/Si heterojunction thin film solar cell as the function of wavelength photons incident have modeled and calculated. There is ITO/TiO{sub 2}/C-Si/TiO{sub 2} device configuration in which p-n junction represented by C-Si and viewed as active layer for excited electrons production. The dependent of such electric field on wavelength can be understood by solving scattering matrix obtained from the interface matrix and layer matrix operation, in this report we have calculated the electric field distribution for several active layer thickness (d{sub AL}) conditions and each of them examined in the cases of x position are equal to zero, half and full of d{sub AL} while for the entire taking into account we used 250 – 840 nm wavelength range. However, this calculation is restricted by idealization assumption such as the complex refraction index is doesn’t change significantly by the thickness in hundred nanometer range, linear optical response described by scalar refraction complex index and the interface are parallel and flat compared to the wavelength of the light.

  1. Improving ice nucleation activity of zein film through layer-by-layer deposition of extracellular ice nucleators.

    PubMed

    Shi, Ke; Yu, Hailong; Lee, Tung-Ching; Huang, Qingrong

    2013-11-13

    Zein protein has been of scientific interest in the development of biodegradable functional food packaging. This study aimed at developing a novel zein-based biopolymer film with ice nucleation activity through layer-by-layer deposition of biogenic ice nucleators, that is, extracellular ice nucleators (ECINs) isolated from Erwinia herbicola , onto zein film surface. The adsorption behaviors and mechanisms were investigated using quartz crystal microbalance with dissipation monitoring (QCM-D). On unmodified zein surface, the highest ECINs adsorption occurred at pH 5.0; on UV/ozone treated zein surface followed by deposition of poly(diallyldimethylammonium chloride) (PDADMAC) layer, the optimum condition for ECINs adsorption occurred at pH 7.0 and I 0.05 M, where the amount of ECINs adsorbed was also higher than that on unmodified zein surface. QCM-D analyses further revealed a two-step adsorption process on unmodified zein surfaces, compared to a one-step adsorption process on PDADMAC-modified zein surface. Also, significantly, in order to quantify the ice nucleation activity of ECINs-coated zein films, an empirical method was developed to correlate the number of ice nucleators with the ice nucleation temperature measured by differential scanning calorimetry. Calculated using this empirical method, the highest ice nucleation activity of ECINs on ECINs-modified zein film reached 64.1 units/mm(2), which was able to elevate the ice nucleation temperature of distilled water from -15.5 °C to -7.3 °C.

  2. Monolithic microwave integrated circuit devices for active array antennas

    NASA Technical Reports Server (NTRS)

    Mittra, R.

    1984-01-01

    Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

  3. The effectiveness of activating electrical devices using alpha wave synchronisation contingent with eye closure.

    PubMed

    Craig, A; Tran, Y; McIsaac, P; Moses, P; Kirkup, L; Searle, A

    2000-08-01

    Increases in alpha wave amplitude occur with eye closure (EC) and decreases occur when the eyes are opened (EO). The research reports in this paper emphasise effectiveness of people using these alpha wave changes to activate electrical devices. Effectiveness was measured in terms of time taken and errors made when selecting the correct device. Ten non-disabled subjects significantly decreased the time taken and errors made to activate correctly a device using a six-option environmental control system (ECS) in the laboratory. In addition, a severely disabled person was shown to use the ECS successfully to control her television in her home environment. This research demonstrates that alpha wave manipulation contingent with EC and EO can be the basis for a reliable and quick switching system for controlling electrical devices. Applications to disability are discussed. PMID:10975664

  4. Depth heterogeneity of fully aromatic polyamide active layers in reverse osmosis and nanofiltration membranes.

    PubMed

    Coronell, Orlando; Mariñas, Benito J; Cahill, David G

    2011-05-15

    We studied the depth heterogeneity of fully aromatic polyamide (PA) active layers in commercial reverse osmosis (RO) and nanofiltration (NF) membranes by quantifying near-surface (i.e., top 6 nm) and volume-averaged properties of the active layers using X-ray photoelectron spectrometry (XPS) and Rutherford backscattering spectrometry (RBS), respectively. Some membranes (e.g., ESPA3 RO) had active layers that were depth homogeneous with respect to the concentration and pK(a) distribution of carboxylic groups, degree of polymer cross-linking, concentration of barium ion probe that associated with ionized carboxylic groups, and steric effects experienced by barium ion. Other membranes (e.g., NF90 NF) had active layers that were depth heterogeneous with respect to the same properties. Our results therefore support the existence of both depth-homogeneous and depth-heterogeneous active layers. It remains to be assessed whether the depth heterogeneity consists of gradually changing properties throughout the active layer depth or of distinct sublayers with different properties.

  5. Induced- and alternating-current electro-osmotic control of the diffusion layer growth in a microchannel-membrane interface device

    NASA Astrophysics Data System (ADS)

    Park, Sinwook; Yossifon, Gilad

    2014-11-01

    The passage of an electric current through an ionic permselective medium under an applied electric field is characterized by the formation of ionic concentration gradients, which result in regions of depleted and enriched ionic concentration at opposite ends of the medium. Induced-current electro-osmosis (ICEO) and alternating-current-electro-osmosis (ACEO) are shown to control the growth of the diffusion layer (DL) which, in turn, controls the diffusion limited ion transport through the microchannel-membrane system. We fabricated and tested devices made of a Nafion membrane connecting two opposite PDMS microchannels. An interdigitated electrode array was embedded within the microchannel with various distances from the microchannel-membrane interface. The induced ICEO (floating electrodes) / ACEO (active electrodes) vortices formed at the electrode array stir the fluid and thereby suppress the growth of the DL. The intensity of the ACEO vortices is controlled by either varying the voltage amplitude or the frequency, each having its own unique effect. Enhancement of the limiting current by on-demand control of the diffusion length is of importance in on-chip electro-dialysis, desalination and preconcentration of analytes.

  6. Activity of lactoperoxidase when adsorbed on protein layers.

    PubMed

    Haberska, Karolina; Svensson, Olof; Shleev, Sergey; Lindh, Liselott; Arnebrant, Thomas; Ruzgas, Tautgirdas

    2008-09-15

    Lactoperoxidase (LPO) is an enzyme, which is used as an antimicrobial agent in a number of applications, e.g., food technology. In the majority of applications LPO is added to a homogeneous product phase or immobilised on product surface. In the latter case, however, the measurements of LPO activity are seldom reported. In this paper we have assessed LPO enzymatic activity on bare and protein modified gold surfaces by means of electrochemistry. It was found that LPO rapidly adsorbs to bare gold surfaces resulting in an amount of LPO adsorbed of 2.9mg/m(2). A lower amount of adsorbed LPO is obtained if the gold surface is exposed to bovine serum albumin, bovine or human mucin prior to LPO adsorption. The enzymatic activity of the adsorbed enzyme is in general preserved at the experimental conditions and varies only moderately when comparing bare gold and gold surface pretreated with the selected proteins. The measurement of LPO specific activity, however, indicate that it is about 1.5 times higher if LPO is adsorbed on gold surfaces containing a small amount of preadsorbed mucin in comparison to the LPO directly adsorbed on bare gold.

  7. Children with Autistic Spectrum Disorders and Speech-Generating Devices: Communication in Different Activities at Home

    ERIC Educational Resources Information Center

    Thunberg, Gunilla; Ahlsen, Elisabeth; Sandberg, Annika Dahlgren

    2007-01-01

    The communication of four children with autistic spectrum disorder was investigated when they were supplied with a speech-generating device (SGD) in three different activities in their home environment: mealtime, story reading and "sharing experiences of the preschool day". An activity based communication analysis, in which collective and…

  8. Effects of a Physical Education Supportive Curriculum and Technological Devices on Physical Activity

    ERIC Educational Resources Information Center

    Clapham, Emily Dean; Sullivan, Eileen C.; Ciccomascolo, Lori E.

    2015-01-01

    The purpose of this study was to examine the effects of a physical education supportive curriculum and technological devices, heart rate monitor (HRM) and pedometer (PED), on physical activity. A single-subject ABAB research design was used to examine amount and level of participation in physical activity among 106 suburban fourth and fifth…

  9. Crystallinity Modulation of Layered Carbon Nitride for Enhanced Photocatalytic Activities.

    PubMed

    Wang, Jianhai; Shen, Yanfei; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-08-22

    As an emerging metal-free semiconductor, covalently bonded carbon nitride (CN) has attracted much attention in photocatalysis. However, drawbacks such as a high recombination rate of excited electrons and holes hinder its potential applications. Tailoring the crystallinity of semiconductors is an important way to suppress unwanted charge recombination, but has rarely been applied to CN so far. Herein, a simple method to synthesize CN of high crystallinity by protonation of specific intermediate species during conventional polymerization is reported. Interestingly, the as-obtained CN exhibited improved photocatalytic activities of up to seven times those of the conventional bulk CN. This approach, with only a slight change to the conventional method, provides a facile way to effectively regulate the crystallinity of bulk CN to improve its photocatalytic activities and sheds light on large-scale industrial applications of CN with high efficiency for sustainable energy. PMID:27436164

  10. Crystallinity Modulation of Layered Carbon Nitride for Enhanced Photocatalytic Activities.

    PubMed

    Wang, Jianhai; Shen, Yanfei; Li, Ying; Liu, Songqin; Zhang, Yuanjian

    2016-08-22

    As an emerging metal-free semiconductor, covalently bonded carbon nitride (CN) has attracted much attention in photocatalysis. However, drawbacks such as a high recombination rate of excited electrons and holes hinder its potential applications. Tailoring the crystallinity of semiconductors is an important way to suppress unwanted charge recombination, but has rarely been applied to CN so far. Herein, a simple method to synthesize CN of high crystallinity by protonation of specific intermediate species during conventional polymerization is reported. Interestingly, the as-obtained CN exhibited improved photocatalytic activities of up to seven times those of the conventional bulk CN. This approach, with only a slight change to the conventional method, provides a facile way to effectively regulate the crystallinity of bulk CN to improve its photocatalytic activities and sheds light on large-scale industrial applications of CN with high efficiency for sustainable energy.

  11. Luminance Mechanisms of White Organic Light-Emitting Devices Fabricated Utilizing a Charge Generation Layer with a Light-Emitting Function.

    PubMed

    Kim, K H; Jeon, Y P; Choo, D C; Kim, T W

    2015-07-01

    The luminance mechanisms of the white organic light-emitting devices (WOLEDs) with a charge generation layer (CGL) consisting of a tungsten oxide layer and a 5,6,11,12-tetraphenyltetracene (rubrene) doped N,N',-bis-(1-naphthyl)-N,N'-diphenyl1-1'-biphenyl-4,4'-diamine (NPB) layer were investigated. Current densities and luminances of the WOLEDs increased with increasing a rubrene doping concentration because the formation of excitons in the rubrene-doped NPB layer increased due to the more exciton trapping in rubrene molecules and the delay of the electron injection due to the insertion of the litium qunolate layer. The yellow light emitted from the rubrene-doped NPB layer in the CGL combined with the blue light from the main emitting layer of the WOLEDs, resulting in the emission of the white light. The ratio between the yellow and the blue color peak intensities of the electroluminescence spectra for the WOLEDs was controlled by the rubrene doping concentration. The Commission Internationale de l'Eclairage coordinates of the fabricated WOLED were (0.31, 0.42) at 740.7 cd/m2, indicative of white emission color. PMID:26373110

  12. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  13. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  14. Contribution of S-Layer Proteins to the Mosquitocidal Activity of Lysinibacillus sphaericus

    PubMed Central

    Allievi, Mariana Claudia; Palomino, María Mercedes; Prado Acosta, Mariano; Lanati, Leonardo; Ruzal, Sandra Mónica; Sánchez-Rivas, Carmen

    2014-01-01

    Lysinibacillus sphaericus strains belonging the antigenic group H5a5b produce spores with larvicidal activity against larvae of Culex mosquitoes. C7, a new isolated strain, which presents similar biochemical characteristics and Bin toxins in their spores as the reference strain 2362, was, however, more active against larvae of Culex mosquitoes. The contribution of the surface layer protein (S-layer) to this behaviour was envisaged since this envelope protein has been implicated in the pathogenicity of several bacilli, and we had previously reported its association to spores. Microscopic observation by immunofluorescence detection with anti S-layer antibody in the spores confirms their attachment. S-layers and BinA and BinB toxins formed high molecular weight multimers in spores as shown by SDS-PAGE and western blot detection. Purified S-layer from both L. sphaericus C7 and 2362 strain cultures was by itself toxic against Culex sp larvae, however, that from C7 strain was also toxic against Aedes aegypti. Synergistic effect between purified S-layer and spore-crystal preparations was observed against Culex sp. and Aedes aegypti larvae. This effect was more evident with the C7 strain. In silico analyses of the S-layer sequence suggest the presence of chitin-binding and hemolytic domains. Both biochemical characteristics were detected for both S-layers strains that must justify their contribution to pathogenicity. PMID:25354162

  15. Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials: A case study on MoSe{sub 2}

    SciTech Connect

    Utama, M. Iqbal Bakti; Lu, Xin; Yuan, Yanwen; Xiong, Qihua

    2014-12-22

    Seed catalyst such as perylene-3,4,9,10-tetracarboxylic acid tetrapotassium (PTAS) salt has been used for promoting the growth of atomically thin layered materials in chemical vapor deposition (CVD) synthesis. However, the ramifications from the usage of such catalyst are not known comprehensively. Here, we report the influence of PTAS seeding on the transistor device performance from few-layered CVD-grown molybdenum diselenide (MoSe{sub 2}) flakes. While better repeatability and higher yield can be obtained with the use of PTAS seeds in synthesis, we observed that PTAS-seeded flakes contain particle impurities. Moreover, devices from PTAS-seeded MoSe{sub 2} flakes consistently displayed poorer field-effect mobility, current on-off ratio, and subthreshold swing as compared to unseeded flakes.

  16. High-power-density fault-current limiting devices using superconducting YBa2Cu3O7 films and high-resistivity alloy shunt layers

    NASA Astrophysics Data System (ADS)

    Yamasaki, Hirofumi; Furuse, Mitsuho; Nakagawa, Yoshihiko

    2004-11-01

    Switching of superconducting thin-film resistive fault-current limiting devices with alloy shunt layers was studied. Au -Ag alloy thin films, whose room-temperature resistivity is about six times higher than that of pure gold, were sputter deposited on YBa2Cu3O7 films on sapphire substrates with high critical current density of Jc=3.05±0.05MA /cm2. A small sample, 5mm wide and 40mm long, had the capacity of a rated current of 32Arms in normal operation and withstood a high voltage of 107Vrms for 0.1s after switching, resulting in a very high switching power density of ˜1.7kVA /cm2, which is more than four times higher than conventional devices using gold shunt layers.

  17. Active mode-locked lasers and other photonic devices using electro-optic whispering gallery mode resonators

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B. (Inventor); Ilchenko, Vladimir (Inventor); Savchenkov, Anatoliy (Inventor); Maleki, Lutfollah (Inventor)

    2006-01-01

    Techniques and devices using whispering gallery mode (WGM) optical resonators, where the optical materials of the WGM resonators exhibit an electro-optical effect to perform optical modulation. Examples of actively mode-locked lasers and other devices are described.

  18. Enhancement of the Color Rendering Index of White Organic Light-Emitting Devices Based on a Blue and Red Emitting Layer with a Y3Al5O12:Ce3+ Green Phosphor Color-Conversion Layer.

    PubMed

    Jang, J S; Lee, K S; Lee, E J; Kwon, M S; Kim, T W

    2015-01-01

    White organic light-emitting devices (WOLEDs) were fabricated utilizing blue and red emitting organic light-emitting devices and a color conversion layer (CCL) made of yttrium aluminum garnet (YAG:Ce3+) phosphors embedded into polymethylmethacrylate. The good color balance for the color conversion of the WOLEDs was achieved utilizing 20-nm blue and 10-nm red OLEDs. The electroluminescence spectrum for the fabricated device showed a white color consisting of the blue color from the 4,4-bis(2,2-diphenylethen-1-yl)bipheny layer, the red color from the tris-(8-hydroxyquinolinato) aluminum: 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran layer, and the green color from the YAG:Ce3+ phosphor. The Commission Internationale de l'Eclairage coordinates of the WOLEDs slightly shifted from (0.25, 0.23) of the blue and red emission OLEDs without phosphors to (0.34, 0.35) of the OLEDs with green phosphors, indicative of the pure white color. WOLEDs with a CCL exhibited three wavelength white emissions with a color rendering index of 86.

  19. OLED devices

    DOEpatents

    Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

    2011-02-22

    An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

  20. Device and software used to carry out Cyclic Neutron Activation Analysis

    NASA Astrophysics Data System (ADS)

    Castro-García, M. P.; Rey-Ronco, M. A.; Alonso-Sánchez, T.

    2014-11-01

    This paper discusses the device and software used to carry out Cyclic Neutron Activation Analysis (CNAA). The aim of this investigation is defining through this device the fluorite content present on different samples from fluorspar concentration plant through the DGNAA (Delayed Gamma Neutron Activation Analysis) method. This device is made of americium-beryllium neutron source, NaI (2"×2") and BGO (2"×2") gamma rays detectors, multichannel and an automatic mechanism which moves the samples from activation and reading position. This mechanism is controlled by a software which allows moving the samples precisely and in a safe way (~ms), which it is very useful when the radioactive isotopes have to be detected with a half time less than 8s.

  1. Single-layer electroluminescent devices based on fluorene-1H-pyrazolo[3,4-b]quinoxaline co-polymers

    NASA Astrophysics Data System (ADS)

    Pokladko-Kowar, Monika; Danel, Andrzej; Chacaga, Łukasz

    2013-11-01

    A fluorene based copolymer was synthesized for electroluminescent application. To the main chain of polymer the nitrogen heterocyclic, 1H-pyrazolo[3,4-b]quinoxaline, unit was introduced. The incorporation of this derivative tuned the emission from the blue to yellow-green one. A simple, single layered device was fabricated with the configuration ITO/PEDOT/co-poly-FLU-PQX/Ca/Mg.

  2. Nanofibrous mats layer-by-layer assembled by HTCC/layered silicate composites with in vitro antitumor activity against SMMC-7721 cells.

    PubMed

    Huang, Rong; Zhou, Xue; Liu, Xinqin; Zhang, Qi; Jin, Huan'guang; Shi, Xiaowen; Luo, Wenjing; Deng, Hongbing

    2014-03-01

    Organic rectorite (OREC) was used to prepare the intercalated nanocomposites with N-(2-hydroxyl) propyl-3-trimethyl ammonium chitosan chloride (HTCC), and then the immobilization of the positively charged HTCC-OREC nanocomposites and the negatively charged sodium alginate (ALG) on cellulose nanofibrous mats was performed through layer-by-layer (LBL) technique. Fiber diameter distribution results from Field Emission Scanning Electron Microscopy (FE-SEM) images showed that the average fiber diameter of (HTCC-OREC/ALG)(n) films coating obviously increased from 433 to 608 nm. Moreover, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results further confirmed the interaction between HTCC and OREC and their successful immobilization on cellulose template. MTT assay indicated that the prepared nanofibrous mats exhibited strong inhibitory activity against human hepatocellular carcinoma cells (SMMC-7721) but a little cytotoxic effect on human Chang liver (CCL-13) cells. Furthermore, the experimental results from FE-SEM and Inverted Fluorescence Microscope of SMMC-7721 cells cultured on LBL structured nanofibrous mats demonstrated the significant antitumor activity of prepared samples. The developed approach to immobilize nanocomposites onto polymer nanofibers with controllable thickness may also be utilized to tumor therapy. PMID:24730244

  3. A passive-active neutron device for assaying remote-handled transuranic waste

    SciTech Connect

    Estep, R.J.; Coop, K.L.; Deane, T.M.; Lujan, J.E.

    1989-01-01

    A combined passive-active neutron assay device was constructed for assaying remote-handled transuranic waste. A study of matrix and source position effects in active assays showed that a knowledge of the source position alone is not sufficient to correct for position-related errors in highly moderating or absorbing matrices. An alternate function for the active assay of solid fuel pellets was derived, although the efficacy of this approach remains to be established. 4 refs., 7 figs., 1 tab.

  4. Method and apparatus for increasing resistance of bipolar buried layer integrated circuit devices to single-event upsets

    NASA Technical Reports Server (NTRS)

    Zoutendyk, John A. (Inventor)

    1991-01-01

    Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate. To increase the resistance of the bipolar transistors to single-event upsets due to ionized particle radiation, the substrate is biased relative to the buried layer with an external bias voltage selected to offset the built-in potential just enough (typically between about +0.1 to +0.2 volt) to prevent an accumulation of charge in the buried-layer-substrate junction.

  5. Permafrost and Active Layer Monitoring in the Maritime Antarctic: A Contribution to TSP and ANTPAS projects

    NASA Astrophysics Data System (ADS)

    Vieira, G.; Ramos, M.; Batista, V.; Caselli, A.; Correia, A.; Fragoso, M.; Gruber, S.; Hauck, C.; Kenderova, R.; Lopez-Martinez, J.; Melo, R.; Mendes-Victor, L. A.; Miranda, P.; Mora, C.; Neves, M.; Pimpirev, C.; Rocha, M.; Santos, F.; Blanco, J. J.; Serrano, E.; Trigo, I.; Tome, D.; Trindade, A.

    2008-12-01

    Permafrost and active layer monitoring in the Maritime Antarctic (PERMANTAR) is a Portuguese funded International Project that, in cooperation with the Spanish project PERMAMODEL, will assure the installation and the maintenance of a network of boreholes and active layer monitoring sites, in order to characterize the spatial distribution of the physical and thermal properties of permafrost, as well as the periglacial processes in Livingston and Deception Islands (South Shetlands). The project is part of the International Permafrost Association IPY projects Thermal State of Permafrost (TSP) and Antarctic and Sub-Antarctic Permafrost, Soils and Periglacial Environments (ANTPAS). It contributes to GTN-P and CALM-S networks. The PERMANTAR-PERMAMODEL permafrost and active layer monitoring network includes several boreholes: Reina Sofia hill (since 2000, 1.1m), Incinerador (2000, 2.3m), Ohridski 1 (2008, 5m), Ohridski 2 (2008, 6m), Gulbenkian-Permamodel 1 (2008, 25m) and Gulbenkian- Permamodel 2 (2008, 15m). For active layer monitoring, several CALM-S sites have been installed: Crater Lake (2006), Collado Ramos (2007), Reina Sofia (2007) and Ohridski (2007). The monitoring activities are accompanied by detailed geomorphological mapping in order to identify and map the geomorphic processes related to permafrost or active layer dynamics. Sites will be installed in early 2009 for monitoring rates of geomorphological activity in relation to climate change (e.g. solifluction, rockglaciers, thermokarst). In order to analyse the spatial distribution of permafrost and its ice content, electrical resistivity tomography (ERT), and seismic refraction surveys have been performed and, in early 2009, continuous ERT surveying instrumentation will be installed for monitoring active layer evolution. The paper presents a synthesis of the activities, as well as the results obtained up to the present, mainly relating to ground temperature monitoring and from permafrost characteristics and

  6. Human movement activity classification approaches that use wearable sensors and mobile devices

    NASA Astrophysics Data System (ADS)

    Kaghyan, Sahak; Sarukhanyan, Hakob; Akopian, David

    2013-03-01

    Cell phones and other mobile devices become part of human culture and change activity and lifestyle patterns. Mobile phone technology continuously evolves and incorporates more and more sensors for enabling advanced applications. Latest generations of smart phones incorporate GPS and WLAN location finding modules, vision cameras, microphones, accelerometers, temperature sensors etc. The availability of these sensors in mass-market communication devices creates exciting new opportunities for data mining applications. Particularly healthcare applications exploiting build-in sensors are very promising. This paper reviews different approaches of human activity recognition.

  7. Recent advances in polymer solar cells: realization of high device performance by incorporating water/alcohol-soluble conjugated polymers as electrode buffer layer.

    PubMed

    He, Zhicai; Wu, Hongbin; Cao, Yong

    2014-02-01

    This Progress Report highlights recent advances in polymer solar cells with special attention focused on the recent rapid-growing progress in methods that use a thin layer of alcohol/water-soluble conjugated polymers as key component to obtain optimized device performance, but also discusses novel materials and device architectures made by major prestigious institutions in this field. We anticipate that due to drastic improvements in efficiency and easy utilization, this method opens up new opportunities for PSCs from various material systems to improve towards 10% efficiency, and many novel device structures will emerge as suitable architectures for developing the ideal roll-to-roll type processing of polymer-based solar cells.

  8. Epitaxial Gd2O3 on strained Si1-xGex layers for next generation complementary metal oxide semiconductor device application

    NASA Astrophysics Data System (ADS)

    Ghosh, Kankat; Das, Sudipta; Fissel, A.; Osten, H. J.; Laha, Apurba

    2013-10-01

    Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si1-xGex layers using same technique. Pt/Gd2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm2 was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (Dit) was only ˜1011 cm-2 eV-1.

  9. One-step fabrication of triple-layered microcapsules by a tri-axial flow focusing device for microencapsulation of soluble drugs and imaging agents

    NASA Astrophysics Data System (ADS)

    Yuan, Shuai; Wu, Qiang; Lei, Fan; Li, Guangbin; Si, Ting; Xu, Ronald X.

    2016-04-01

    In this work, the microencapsulation of water-soluble drug (doxorubicin, Dox) and imaging agent (perfluorocarbon, PFC) is performed by a novel liquid driven tri-axial flow focusing (LDTFF) device. The formation of stable triple-layered cone-jet mode can be observed in the simple well-assembled LDTFF device, providing an easy approach to fabricate mono-disperse triple-layered microcapsules with high encapsulation efficiency, high throughput and low cost in just one step. The fluorescence images show that the microcapsules have a satisfactory core-shell structure. The SEM micrographs show spherical and smooth surface views of the triple-layered microcapsules after being stirred 72h to remove the organic solvent totally. The results of thermo-responsive release experiments of the produced triple-layered microcapsules show these multifunctional capsules can be well stimulated when the environment temperature is beyond 55 degree centigrade. In a word, this novel approach has a great potential in applications such as drug delivery and image-guided therapy.

  10. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    PubMed

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.

  11. ELM-induced melting: assessment of shallow melt layer damage and the power handling capability of tungsten in a linear plasma device

    NASA Astrophysics Data System (ADS)

    Morgan, T. W.; van Eden, G. G.; de Kruif, T. M.; van den Berg, M. A.; Matejicek, J.; Chraska, T.; De Temmerman, G.

    2014-04-01

    Tungsten samples were exposed to combined steady state and edge localised mode transient replication experiments in a linear plasma device; either in combined hydrogen plasma and high powered laser exposures at Magnum-PSI or steady state hydrogen plasma and superimposed plasma pulses created using a capacitor bank in Pilot-PSI. With each transient the surface temperature of the sample was elevated above the melting point creating a shallow molten layer. An apparent heat transport reduction in the near surface layer increases as a function of pulse number. Scanning electron microscopy analysis of the samples shows large scale grain enlargement down to several hundred to thousand micrometers below the surface as well as melt layer motion due to evaporative recoil from the molten surface. In the ITER divertor this would lead to severe embrittlement and enhanced erosion of the tungsten surface leading to reduced lifetimes for the plasma facing material.

  12. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    PubMed

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs. PMID:27459343

  13. Integrated circuit with dissipative layer for photogenerated carriers

    DOEpatents

    Myers, D.R.

    1988-04-20

    The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.

  14. Layer-by-layer carbon nanotube bio-templates for in situ monitoring of the metabolic activity of nitrifying bacteria

    NASA Astrophysics Data System (ADS)

    Loh, Kenneth J.; Guest, Jeremy S.; Ho, Genevieve; Lynch, Jerome P.; Love, Nancy G.

    2009-03-01

    Despite the wide variety of effective disinfection and wastewater treatment techniques for removing organic and inorganic wastes, pollutants such as nitrogen remain in wastewater effluents. If left untreated, these nitrogenous wastes can adversely impact the environment by promoting the overgrowth of aquatic plants, depleting dissolved oxygen, and causing eutrophication. Although nitrification/denitrification processes are employed during advanced wastewater treatment, effective and efficient operation of these facilities require information of the pH, dissolved oxygen content, among many other parameters, of the wastewater effluent. In this preliminary study, a biocompatible CNT-based nanocomposite is proposed and validated for monitoring the biological metabolic activity of nitrifying bacteria in wastewater effluent environments (i.e., to monitor the nitrification process). Using carbon nanotubes and a pH-sensitive conductive polymer (i.e., poly(aniline) emeraldine base), a layer-by-layer fabrication technique is employed to fabricate a novel thin film pH sensor that changes its electrical properties in response to variations in ambient pH environments. Laboratory studies are conducted to evaluate the proposed nanocomposite's biocompatibility with wastewater effluent environments and its pH sensing performance.

  15. Rapid electrostatics-assisted layer-by-layer assembly of near-infrared-active colloidal photonic crystals.

    PubMed

    Askar, Khalid; Leo, Sin-Yen; Xu, Can; Liu, Danielle; Jiang, Peng

    2016-11-15

    Here we report a rapid and scalable bottom-up technique for layer-by-layer (LBL) assembling near-infrared-active colloidal photonic crystals consisting of large (⩾1μm) silica microspheres. By combining a new electrostatics-assisted colloidal transferring approach with spontaneous colloidal crystallization at an air/water interface, we have demonstrated that the crystal transfer speed of traditional Langmuir-Blodgett-based colloidal assembly technologies can be enhanced by nearly 2 orders of magnitude. Importantly, the crystalline quality of the resultant photonic crystals is not compromised by this rapid colloidal assembly approach. They exhibit thickness-dependent near-infrared stop bands and well-defined Fabry-Perot fringes in the specular transmission and reflection spectra, which match well with the theoretical calculations using a scalar-wave approximation model and Fabry-Perot analysis. This simple yet scalable bottom-up technology can significantly improve the throughput in assembling large-area, multilayer colloidal crystals, which are of great technological importance in a variety of optical and non-optical applications ranging from all-optical integrated circuits to tissue engineering. PMID:27494632

  16. Transfection activity of layer-by-layer plasmid DNA/poly(ethylenimine) films deposited on PLGA microparticles

    PubMed Central

    Kakade, Sandeep; Manickam, Devika Soundara; Handa, Hitesh; Mao, Guangzhao; Oupický, David

    2009-01-01

    Layer-by-layer (LbL) assemblies of DNA and polycations on the surface of colloidal templates can be used for gene delivery. Plasmid DNA encoding for secreted alkaline phosphatase (SEAP) was used to deposit LbL films with poly(ethylenimine) (PEI) on the surface of polystyrene and poly(lactide-co-glycolide) microparticles. The formation of LBL films was confirmed by zeta potential analysis and fluorescence and atomic force microscopy techniques. The LbL particles were rapidly internalized in a dose-dependent manner by J774.1 murine macrophages. Transfection activity of the LbL particles was evaluated in J774.1 cells using three different doses (5, 10, 25 particle per cell). The levels of SEAP expression increased with increasing dose but were lower than transfection levels mediated by control PEI/DNA polyplexes at corresponding DNA doses. The LbL particles reported here present a promising platform for delivery of DNA to phagocytic cells. PMID:18786622

  17. Rapid electrostatics-assisted layer-by-layer assembly of near-infrared-active colloidal photonic crystals.

    PubMed

    Askar, Khalid; Leo, Sin-Yen; Xu, Can; Liu, Danielle; Jiang, Peng

    2016-11-15

    Here we report a rapid and scalable bottom-up technique for layer-by-layer (LBL) assembling near-infrared-active colloidal photonic crystals consisting of large (⩾1μm) silica microspheres. By combining a new electrostatics-assisted colloidal transferring approach with spontaneous colloidal crystallization at an air/water interface, we have demonstrated that the crystal transfer speed of traditional Langmuir-Blodgett-based colloidal assembly technologies can be enhanced by nearly 2 orders of magnitude. Importantly, the crystalline quality of the resultant photonic crystals is not compromised by this rapid colloidal assembly approach. They exhibit thickness-dependent near-infrared stop bands and well-defined Fabry-Perot fringes in the specular transmission and reflection spectra, which match well with the theoretical calculations using a scalar-wave approximation model and Fabry-Perot analysis. This simple yet scalable bottom-up technology can significantly improve the throughput in assembling large-area, multilayer colloidal crystals, which are of great technological importance in a variety of optical and non-optical applications ranging from all-optical integrated circuits to tissue engineering.

  18. Carbon nanotubes supported cerium dioxide and platinum nanohybrids: Layer-by-layer synthesis and enhanced electrocatalytic activity for methanol oxidation

    NASA Astrophysics Data System (ADS)

    Lou, Xinyuan; Chen, Jiayi; Wang, Mengdi; Gu, Jialei; Wu, Ping; Sun, Dongmei; Tang, Yawen

    2015-08-01

    We successfully synthesize carbon nanotubes (CNTs) supported cerium dioxide and platinum (Pt/CeO2/CNTs) nanohybrids via layer-by-layer assembly. The composition, morphology and structure of the as-prepared Pt/CeO2/CNTs nanohybrids are characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectrometer (EDX), selected-area electron diffraction (SAED), X-ray diffraction (XRD), thermogravimetric analysis (TGA), and inductively coupled plasma atomic emission spectrometry (ICP-AES). By comparison of the electrocatalytic properties of the Pt/CeO2/CNTs with the Pt/CNTs, we systematically investigate the promotion effect of CeO2 on the Pt/CeO2/CNTs catalysts towards methanol oxidation. It is found that the introduction of CeO2 not only enhances the electrocatalytic activity and stability of the Pt/CeO2/CNTs catalyst for methanol oxidation but also minimizes the CO poisoning, probably accounting for the good oxygen carrying capacity of CeO2 and its high stability in acidic solution.

  19. Seismic Response Control Of Structures Using Semi-Active and Passive Variable Stiffness Devices

    NASA Astrophysics Data System (ADS)

    Salem, Mohamed M. A.

    Controllable devices such as Magneto-Rheological Fluid Dampers, Electro-Rheological Dampers, and controllable friction devices have been studied extensively with limited implementation in real structures. Such devices have shown great potential in reducing seismic demands, either as smart base isolation systems, or as smart devices for multistory structures. Although variable stiffness devices can be used for seismic control of structures, the vast majority of research effort has been given to the control of damping. The primary focus of this dissertation is to evaluate the seismic control of structures using semi-active and passive variable stiffness characteristics. Smart base isolation systems employing variable stiffness devices have been studied, and two semi-active control strategies are proposed. The control algorithms were designed to reduce the superstructure and base accelerations of seismically isolated structures subject to near-fault and far-field ground motions. Computational simulations of the proposed control algorithms on the benchmark structure have shown that excessive base displacements associated with the near-fault ground motions may be better mitigated with the use of variable stiffness devices. However, the device properties must be controllable to produce a wide range of stiffness changes for an effective control of the base displacements. The potential of controllable stiffness devices in limiting the base displacement due to near-fault excitation without compromising the performance of conventionally isolated structures, is illustrated. The application of passive variable stiffness devices for seismic response mitigation of multistory structures is also investigated. A stiffening bracing system (SBS) is proposed to replace the conventional bracing systems of braced frames. An optimization process for the SBS parameters has been developed. The main objective of the design process is to maintain a uniform inter-story drift angle over the

  20. Discrete-Layer Piezoelectric Plate and Shell Models for Active Tip-Clearance Control

    NASA Technical Reports Server (NTRS)

    Heyliger, P. R.; Ramirez, G.; Pei, K. C.

    1994-01-01

    The objectives of this work were to develop computational tools for the analysis of active-sensory composite structures with added or embedded piezoelectric layers. The targeted application for this class of smart composite laminates and the analytical development is the accomplishment of active tip-clearance control in turbomachinery components. Two distinct theories and analytical models were developed and explored under this contract: (1) a discrete-layer plate theory and corresponding computational models, and (2) a three dimensional general discrete-layer element generated in curvilinear coordinates for modeling laminated composite piezoelectric shells. Both models were developed from the complete electromechanical constitutive relations of piezoelectric materials, and incorporate both displacements and potentials as state variables. This report describes the development and results of these models. The discrete-layer theories imply that the displacement field and electrostatic potential through-the-thickness of the laminate are described over an individual layer rather than as a smeared function over the thickness of the entire plate or shell thickness. This is especially crucial for composites with embedded piezoelectric layers, as the actuating and sensing elements within these layers are poorly represented by effective or smeared properties. Linear Lagrange interpolation polynomials were used to describe the through-thickness laminate behavior. Both analytic and finite element approximations were used in the plane or surface of the structure. In this context, theoretical developments are presented for the discrete-layer plate theory, the discrete-layer shell theory, and the formulation of an exact solution for simply-supported piezoelectric plates. Finally, evaluations and results from a number of separate examples are presented for the static and dynamic analysis of the plate geometry. Comparisons between the different approaches are provided when

  1. Not all instability training devices enhance muscle activation in highly resistance-trained individuals.

    PubMed

    Wahl, Michael J; Behm, David G

    2008-07-01

    The objective of this study was to measure the electromyographic (EMG) activity of the soleus, bicep femoris, rectus femoris, lower abdominal, and lumbosacral erector spinae (LSES) muscles with a variety of (a) instability devices, (b) stable and unstable (Dyna Disc) exercises, and (c) a fatiguing exercise in 16 highly conditioned individuals. The device protocol had participants assume standing and squatting postures while balancing on a variety of unstable platforms (Dyna Disc, BOSU ball, wobble board, and a Swiss ball) and a stable floor. The exercise protocol had subjects performing, static front lunges, static side lunges, 1-leg hip extensions, 1-leg reaches, and calf raises on a floor or an unstable Dyna Disc. For the fatigue experiment, a wall sit position was undertaken under stable and unstable (BOSU ball) conditions. Results for the device experiment demonstrated increased activity for all muscles when standing on a Swiss ball and all muscles other than the rectus femoris when standing on a wobble board. Only lower abdominals and soleus EMG activity increased while squatting on a Swiss ball and wobble board. Devices such as the Dyna Disc and BOSU ball did not exhibit significant differences in muscle activation under any conditions, except the LSES in the standing Dyna Disc conditions. During the exercise protocol, there were no significant changes in muscle activity between stable and unstable (Dyna Disc) conditions. With the fatigue protocol, soleus EMG activity was 51% greater with a stable base. These results indicate that the use of moderately unstable training devices (i.e., Dyna Disc, BOSU ball) did not provide sufficient challenges to the neuromuscular system in highly resistance-trained individuals. Since highly trained individuals may already possess enhanced stability from the use of dynamic free weights, a greater degree of instability may be necessary.

  2. ACTIVE DELIVERY CABLE TUNED TO DEVICE DEPLOYMENT STATE: ENHANCED VISIBILITY OF NITINOL OCCLUDERS DURING PRE-CLINICAL INTERVENTIONAL MRI

    PubMed Central

    Bell, Jamie A.; Saikus, Christina E.; Ratnayaka, Kanishka; Barbash, Israel M.; Faranesh, Anthony Z.; Franson, Dominique N.; Sonmez, Merdim; Slack, Michael C.; Lederman, Robert J.; Kocaturk, Ozgur

    2012-01-01

    Purpose To develop an active delivery system that enhances visualization of nitinol cardiac occluder devices during deployment under real-time MRI. Materials and Methods We constructed an active delivery cable incorporating a loopless antenna and a custom titanium microscrew to secure the occluder devices. The delivery cable was tuned and matched to 50Ω at 64 MHz with the occluder device attached. We used real-time balanced SSFP in a wide-bore 1.5T scanner. Device-related images were reconstructed separately and combined with surface-coil images. The delivery cable was tested in vitro in a phantom and in vivo in swine using a variety of nitinol cardiac occluder devices. Results In vitro, the active delivery cable provided little signal when the occluder device was detached and maximal signal with the device attached. In vivo, signal from the active delivery cable enabled clear visualization of occluder device during positioning and deployment. Device release resulted in decreased signal from the active cable. Post-mortem examination confirmed proper device placement. Conclusions The active delivery cable enhanced the MRI depiction of nitinol cardiac occluder devices during positioning and deployment, both in conventional and novel applications. We expect enhanced visibility to contribute to effectiveness and safety of new and emerging MRI-guided treatments. PMID:22707441

  3. Active/Passive Control of Sound Radiation from Panels using Constrained Layer Damping

    NASA Technical Reports Server (NTRS)

    Gibbs, Gary P.; Cabell, Randolph H.

    2003-01-01

    A hybrid passive/active noise control system utilizing constrained layer damping and model predictive feedback control is presented. This system is used to control the sound radiation of panels due to broadband disturbances. To facilitate the hybrid system design, a methodology for placement of constrained layer damping which targets selected modes based on their relative radiated sound power is developed. The placement methodology is utilized to determine two constrained layer damping configurations for experimental evaluation of a hybrid system. The first configuration targets the (4,1) panel mode which is not controllable by the piezoelectric control actuator, and the (2,3) and (5,2) panel modes. The second configuration targets the (1,1) and (3,1) modes. The experimental results demonstrate the improved reduction of radiated sound power using the hybrid passive/active control system as compared to the active control system alone.

  4. Benzofurocarbazole and benzothienocarbazole as donors for improved quantum efficiency in blue thermally activated delayed fluorescent devices.

    PubMed

    Lee, Dong Ryun; Hwang, Seok-Ho; Jeon, Sang Kyu; Lee, Chil Won; Lee, Jun Yeob

    2015-05-11

    Benzofurocarbazole and benzothienocarbazole were used as electron donors of thermally activated delayed fluorescence (TADF) emitters and the performances of the TADF devices were examined. The benzofurocarbazole and benzothienocarbazole donor moieties were better than carbazole as the electron donors of the TADF emitters. PMID:25869643

  5. A new device for estimating active drag in swimming at maximal velocity.

    PubMed

    Xin-Feng, Wang; Lian-Ze, Wang; Wei-Xing, Yan; De-Jian, Li; Xiong, Shen

    2007-02-15

    A new device was designed to measure the active drag during maximal velocity swimming based on the assumption of equal useful power output in two cases: with and without a small additional drag. A gliding block was used to provide an adjustable drag, which was attached to the swimmer and measured by a force transducer. Six swimmers of national standard (3 males, 3 females) participated in the test. For the males, the mean active drag ranged from 48.57 to 105.88 N in the front crawl and from 54.14 to 76.37 N in the breaststroke. For the females, the mean active drag ranged from 36.31 to 50.27 N in the front crawl and from 36.25 to 77.01 N in the breaststroke. During testing, the swimmer's natural stroke and kick were not disturbed. We conclude that the device provides a useful method for measuring and studying active drag.

  6. Active layer thermal monitoring at Fildes Peninsula, King George Island, Maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, R. F. M.; Schaefer, C. E. G. R.; Simas, F. N. B.; Francelino M., R.; Fernandes-Filho, E. I.; Lyra, G. B.; Bockheim, J. G.

    2014-07-01

    International attention to the climate change phenomena has grown in the last decade; the active layer and permafrost are of great importance in understanding processes and future trends due to their role in energy flux regulation. The objective of the this paper is to present active layer temperature data for one CALM-S site located at Fildes Peninsula, King George Island, Maritime Antarctica over an fifth seven month period (2008-2012). The monitoring site was installed during the summer of 2008 and consists of thermistors (accuracy of ± 0.2 °C), arranged vertically with probes at different depths, recording data at hourly intervals in a~high capacity data logger. A series of statistical analysis were performed to describe the soil temperature time series, including a linear fit in order to identify global trend and a series of autoregressive integrated moving average (ARIMA) models were tested in order to define the best fit for the data. The controls of weather on the thermal regime of the active layer have been identified, providing insights about the influence of climate chance over the permafrost. The active layer thermal regime in the studied period was typical of periglacial environment, with extreme variation at the surface during summer resulting in frequent freeze and thaw cycles. The active layer thickness (ALT) over the studied period showed variability related to different annual weather conditions, reaching a maximum of 117.5 cm in 2009. The ARIMA model was considered appropriate to treat the dataset, enabling more conclusive analysis and predictions when longer data sets are available. Despite the variability when comparing temperature readings and active layer thickness over the studied period, no warming trend was detected.

  7. Active-layer thermal monitoring on the Fildes Peninsula, King George Island, maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, R. F. M.; Schaefer, C. E. G. R.; Simas, F. M. B.; Francelino, M. R.; Fernandes-Filho, E. I.; Lyra, G. B.; Bockheim, J. G.

    2014-12-01

    International attention to climate change phenomena has grown in the last decade; the active layer and permafrost are of great importance in understanding processes and future trends due to their role in energy flux regulation. The objective of this paper is to present active-layer temperature data for one Circumpolar Active Layer Monitoring South hemisphere (CALM-S) site located on the Fildes Peninsula, King George Island, maritime Antarctica over an 57-month period (2008-2012). The monitoring site was installed during the summer of 2008 and consists of thermistors (accuracy of ±0.2 °C), arranged vertically with probes at different depths, recording data at hourly intervals in a high-capacity data logger. A series of statistical analyses was performed to describe the soil temperature time series, including a linear fit in order to identify global trends, and a series of autoregressive integrated moving average (ARIMA) models was tested in order to define the best fit for the data. The affects of weather on the thermal regime of the active layer have been identified, providing insights into the influence of climate change on permafrost. The active-layer thermal regime in the studied period was typical of periglacial environments, with extreme variation in surface during the summer resulting in frequent freeze and thaw cycles. The active-layer thickness (ALT) over the studied period shows a degree of variability related to different annual weather conditions, reaching a maximum of 117.5 cm in 2009. The ARIMA model could describe the data adequately and is an important tool for more conclusive analysis and predictions when longer data sets are available. Despite the variability when comparing temperature readings and ACT over the studied period, no trend can be identified.

  8. Activation Layer Stabilization of High Polarization Photocathodes in Sub-Optimal RF Gun Environments

    SciTech Connect

    Gregory A. Mulhollan

    2010-11-16

    Specific activation recipes for bulk, 100 nm thick MBE grown and high polarization III-V photocathode material have been developed which mitigate the effects of exposure to background gasses. Lifetime data using four representative gasses were acquired for bulk GaAs, 100 nm unstrained GaAs and strained superlattice GaAs/GaAsP, all activated both with Cs and then Cs and Li (bi-alkali). Each photoemitter showed marked resilience improvement when activated using the bi-alkali recipe compared to the standard single alkali recipe. A dual alkali activation system at SLAC was constructed, baked and commissioned with the purpose of performing spin-polarization measurements on electrons emitted from the bi-alkali activated surfaces. An end station at SSRL was configured with the required sources for energy resolved photoemission measurements on the bi-alkali activated and CO2 dosed surfaces. The bi-alkali recipes were successfully implemented at SLAC/SSRL. Measurements at SLAC of the photoelectron spin-polarization from the modified activation surface showed no sign of a change in value compared to the standard activated material, i.e., no ill effects. Analysis of photoemission data indicates that the addition of Li to the activation layer results in a multi-layer structure. The presence of Li in the activation layer also acts as an inhibitor to CO2 absorption, hence better lifetimes in worse vacuum were achieved. The bi-alkali activation has been tested on O2 activated GaAs for comparison with NF3 activated surfaces. Comparable resilience to CO2 exposure was achieved for the O2 activated surface. An RF PECVD amorphous silicon growth system was modified to allow high temperature heat cleaning of GaAs substrates prior to film deposition. Growth versus thickness data were collected. Very thin amorphous silicon germanium layers were optimized to exhibit good behavior as an electron emitter. Growth of the amorphous silicon germanium films on the above substrates was fine tuned

  9. MAPLE prepared heterostructures with arylene based polymer active layer for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Stanculescu, F.; Rasoga, O.; Catargiu, A. M.; Vacareanu, L.; Socol, M.; Breazu, C.; Preda, N.; Socol, G.; Stanculescu, A.

    2015-05-01

    This paper presents some studies about the preparation by matrix-assisted pulsed laser evaporation (MAPLE) technique of heterostructures with single layer of arylene based polymer, poly[N-(2-ethylhexyl)2.7-carbazolyl vinylene]/AMC16 and poly[N-(2-ethylhexyl)2.7-carbazolyl 1.4-phenylene ethynylene]/AMC22, and with layers of these polymers mixed with Buckminsterfullerene/C60 in the weight ratio of 1:2 (AMC16:C60) and 1:3 (AMC22:C60). The deposited layers have been characterized by spectroscopic (UV-Vis-NIR, PL, FTIR) and microscopic (SEM, AFM) methods. The effect of the polymer particularities on the optical and electrical properties of the structures based on polymer and polymer:C60 mixed layer has been analyzed. The study of the electrical properties has revealed typical solar cell behavior for the heterostructure prepared by MAPLE on glass/ITO/PEDOT-PSS with AMC16, AMC22 and AMC22:C60 layer, confirming that this method is adequate for the preparation of polymeric and mixed active layers for solar cells applications. The highest photovoltaic effect was shown by the solar cell structure realized with single layer of AMC16 polymer: glass/ITO/PEDOT-PSS/AMC16/Al.

  10. Efficacy of different final irrigant activation protocols on smear layer removal by EDTA and citric acid.

    PubMed

    Herrera, Daniel R; Santos, Zarina T; Tay, Lidia Y; Silva, Emmanuel J; Loguercio, Alessandro D; Gomes, Brenda P F A

    2013-04-01

    The aim of this study was to evaluate the influence of different activation protocols for chelating agents used after chemo-mechanical preparation (CMP), for smear layer (SL) removal. Forty-five single-rooted human premolars with straight canals and fully formed apex were selected. The specimens were randomly divided into three groups depending on the chelating agent used for smear layer removal: distilled water (DW, control group); 17% ethylenediaminetetraacetic acid (EDTA); and 10% citric acid (CA). Each group was further divided into three subgroups according to the activation protocol used: no-activation (NA), manual dynamic activation (MDA), or sonic activation (SA). After CMP, all specimens were sectioned and processed for observation of the apical thirds by using scanning electron microscopy (SEM). Two calibrated evaluators attributed scores to each specimen. The differences between activation protocols were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Friedman and Wilcoxon signed rank tests were used for comparison between each root canal third. When chelating agents were activated, either by MDA or SA, it was obtained the best cleaning results with no significant difference between EDTA and CA (P > 0.05). Sonic activation showed the best results when root canal thirds were analyzed, in comparison to MDA and NA groups (P < 0.05). The activation of chelating agents, independent of the protocol used, benefits smear layer removal from root canals.

  11. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer

    PubMed Central

    Ciobanu, C. S.; Groza, A.; Iconaru, S. L.; Popa, C. L.; Chapon, P.; Chifiriuc, M. C.; Hristu, R.; Stanciu, G. A.; Negrila, C. C.; Ghita, R. V.; Ganciu, M.; Predoi, D.

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC—American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  12. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer.

    PubMed

    Ciobanu, C S; Groza, A; Iconaru, S L; Popa, C L; Chapon, P; Chifiriuc, M C; Hristu, R; Stanciu, G A; Negrila, C C; Ghita, R V; Ganciu, M; Predoi, D

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC-American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  13. Improving the dielectric properties of an electrowetting-on-dielectric microfluidic device with a low-pressure chemical vapor deposited Si3N4 dielectric layer.

    PubMed

    Shen, Hsien-Hua; Chung, Lung-Yuan; Yao, Da-Jeng

    2015-03-01

    Dielectric breakdown is a common problem in a digital microfluidic system, which limits its application in chemical or biomedical applications. We propose a new fabrication of an electrowetting-on-dielectric (EWOD) device using Si3N4 deposited by low-pressure chemical vapor deposition (LPCVD) as a dielectric layer. This material exhibits a greater relative permittivity, purity, uniformity, and biocompatibility than polymeric films. These properties also increase the breakdown voltage of a dielectric layer and increase the stability of an EWOD system when applied in biomedical research. Medium droplets with mouse embryos were manipulated in this manner. The electrical properties of the Si3N4 dielectric layer-breakdown voltage, refractive index, relative permittivity, and variation of contact angle with input voltage-were investigated and compared with a traditional Si3N4 dielectric layer deposited as a plasma-enhanced chemical vapor deposition to confirm the potential of LPCVD Si3N4 applied as the dielectric layer of an EWOD digital microfluidic system.

  14. Efficiency Enhancement in Polymer Light-Emitting Devices Fabricated Utilizing a MoO3 Hole Injection Layer Coated with Different Solvents.

    PubMed

    Lee, Jun Gyu; Choo, Dong Chul; Bang, Yo Han; Li, Fushan; Kim, Tae Whan

    2016-02-01

    Polymer light-emitting devices (PLEDs) with a MoO3 hole injection layer (HIL) were fabricated to enhance their luminance efficiency. Ultraviolet photoelectron spectroscopy spectra showed that the valence band maximum level of the MoO3 layer was located between the work function of the the indium-tin-oxide anode and the highest occupied molecular orbital level of the poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] hole transport layer. The surface of the MoO3 layer formed by using an ethanol solvent was smoother than that of the MoO layer formed by using a deionized water solvent due to a decrease in the aggregation of the MoO3 resolved in ethanol. The MO3 HIL decreased the operating voltage of the PLED and increased the luminance and the luminance efficiency of the PLED due to a decrease in the hole injection barrier. The operating voltage, the luminance, and the luminance efficiency of the PLEDs with the MoO3 HIL formed by using an ethanol solvent were enhanced in comparison with those of the PLEDs with a MoO3 HIL formed by using a deionized water solvent due to a decrease in the surface roughness of the HIL. PMID:27433634

  15. Aerosol-Jet-Printing silicone layers and electrodes for stacked dielectric elastomer actuators in one processing device

    NASA Astrophysics Data System (ADS)

    Reitelshöfer, Sebastian; Göttler, Michael; Schmidt, Philip; Treffer, Philipp; Landgraf, Maximilian; Franke, Jörg

    2016-04-01

    In this contribution we present recent findings of our efforts to qualify the so called Aerosol-Jet-Printing process as an additive manufacturing approach for stacked dielectric elastomer actuators (DEA). With the presented system we are able to print the two essential structural elements dielectric layer and electrode in one machine. The system is capable of generating RTV-2 silicone layers made of Wacker Elastosil P 7670. Therefore, two aerosol streams of both precursor components A and B are generated in parallel and mixed in one printing nozzle that is attached to a 4-axis kinematic. At maximum speed the printing of one circular Elastosil layer with a calculated thickness of 10 μm and a diameter of 1 cm takes 12 seconds while the process keeps stable for 4.5 hours allowing a quite high overall material output and the generation of numerous silicone layers. By adding a second printing nozzle and the infrastructure to generate a third aerosol, the system is also capable of printing inks with conductive particles in parallel to the silicone. We have printed a reduced graphene oxide (rGO) ink prepared in our lab to generate electrodes on VHB 4905, Elastosil foils and finally on Aerosol-Jet-Printed Elastosil layers. With rGO ink printed on Elastosil foil, layers with a 4-point measured sheet resistance as low as 4 kΩ can be realized leaving room for improving the electrode printing time, which at the moment is not as good as the quite good time-frame for printing the silicone layers. Up to now we have used the system to print a fully functional two-layer stacked DEA to demonstrate the principle of continuously 3D printing actuators.

  16. Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

    PubMed

    Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

    2014-12-01

    Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

  17. Microbial diversity of active layer and permafrost in an acidic wetland from the Canadian High Arctic.

    PubMed

    Wilhelm, Roland C; Niederberger, Thomas D; Greer, Charles; Whyte, Lyle G

    2011-04-01

    The abundance and structure of archaeal and bacterial communities from the active layer and the associated permafrost of a moderately acidic (pH < 5.0) High Arctic wetland (Axel Heiberg Island, Nunavut, Canada) were investigated using culture- and molecular-based methods. Aerobic viable cell counts from the active layer were ∼100-fold greater than those from the permafrost (2.5 × 10(5) CFU·(g soil dry mass)(-1)); however, a greater diversity of isolates were cultured from permafrost, as determined by 16S rRNA gene sequencing. Isolates from both layers demonstrated growth characteristics of a psychrotolerant, halotolerant, and acidotolerant community. Archaea constituted 0.1% of the total 16S rRNA gene copy number and, in the 16S rRNA gene clone library, predominantly (71% and 95%) consisted of Crenarchaeota related to Group I. 1b. In contrast, bacterial communities were diverse (Shannon's diversity index, H = ∼4), with Acidobacteria constituting the largest division of active layer clones (30%) and Actinobacteria most abundant in permafrost (28%). Direct comparisons of 16S rRNA gene sequence data highlighted significant differences between the bacterial communities of each layer, with the greatest differences occurring within Actinobacteria. Comparisons of 16S rRNA gene sequences with those from other Arctic permafrost and cold-temperature wetlands revealed commonly occurring taxa within the phyla Chloroflexi, Acidobacteria, and Actinobacteria (families Intrasporangiaceae and Rubrobacteraceae). PMID:21491982

  18. Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

    NASA Astrophysics Data System (ADS)

    Luong, G. V.; Wirths, S.; Stefanov, S.; Holländer, B.; Schubert, J.; Conde, J. C.; Stoica, T.; Breuer, U.; Chiussi, S.; Goryll, M.; Buca, D.; Mantl, S.

    2013-05-01

    Excimer Laser Annealing (ELA) with a wavelength of 248 nm is used to study doping of biaxialy compressively strained Si1-xGex/Si heterostructures. The challenge is to achieve a high activation of As in SiGe, while conserving the elastic strain and suppressing dopant diffusion. Doping of 20 nm Si0.64Ge0.36 layers by ion implantation of 1 × 1015 As+/cm2 and subsequent laser annealing using single 20 ns pulse with an energy density of 0.6 J/cm2 leads to an As activation of about 20% and a sheet resistance of 650 Ω/sq. At this laser energy density, the entire SiGe layer melts and the subsequent fast recrystallization on a nanosecond time scale allows high As incorporation into the lattice. Moreover, using these annealing parameters, the SiGe layer exhibits epitaxial regrowth with negligible strain relaxation. ELA at energy densities greater than 0.6 J/cm2 resembles Pulsed Lased Induced Epitaxy, leading to an intermixing of the SiGe layer with the Si substrate, thus to thicker single-crystalline strained SiGe layers with sheet resistance down to 62 Ω/sq. Effects of energy densities on composition, crystal quality, activation of As and co-doping with B are discussed and related to the spatial and temporal evolution of the temperature in the irradiated zone, as simulated by Finite Element Methods.

  19. Electrospun nanofiber layers with incorporated photoluminescence indicator for chromatography and detection of ultraviolet-active compounds.

    PubMed

    Kampalanonwat, Pimolpun; Supaphol, Pitt; Morlock, Gertrud E

    2013-07-19

    For the first time, electrospun nanofiber phases were fabricated with manganese-activated zinc silicate as photoluminescent indicator (UV254) to transfer and enlarge its application to the field of UV-active compounds. By integration of such an indicator, UV-active compounds got visible on the chromatogram. The separation of 7 preservatives and a beverage sample were studied on the novel luminescent polyacrylonitrile layers. The mat thickness and mean fiber diameters were calculated for additions of different UV254 indicator concentrations. The separation efficiency on the photoluminescent layers was characterized by comparison to HPTLC layers and calculation of the plate numbers and resolutions. Some benefits were the reduction in migration distance (3cm), migration time (12min), analyte (10-nL volumes) and mobile phase volumes (1mL). As ultrathin stationary phase, such layers are suited for their integration into the Office Chromatography concept. For the first time, electrospun nanofiber layers were hyphenated with mass spectrometry and the confirmation of compounds was successfully performed using the elution-head based TLC-MS Interface.

  20. Use of an activity monitor and GPS device to assess community activity and participation in transtibial amputees.

    PubMed

    Hordacre, Brenton; Barr, Christopher; Crotty, Maria

    2014-03-25

    This study characterized measures of community activity and participation of transtibial amputees based on combined data from separate accelerometer and GPS devices. The relationship between community activity and participation and standard clinical measures was assessed. Forty-seven participants were recruited (78% male, mean age 60.5 years). Participants wore the accelerometer and GPS devices for seven consecutive days. Data were linked to assess community activity (community based step counts) and community participation (number of community visits). Community activity and participation were compared across amputee K-level groups. Forty-six participants completed the study. On average each participant completed 16,645 (standard deviation (SD) 13,274) community steps and 16 (SD 10.9) community visits over seven days. There were differences between K-level groups for measures of community activity (F(2,45) = 9.4, p < 0.001) and participation (F(2,45) = 6.9, p = 0.002) with lower functioning K1/2 amputees demonstrating lower levels of community activity and participation than K3 and K4 amputees. There was no significant difference between K3 and K4 for community activity (p = 0.28) or participation (p = 0.43). This study demonstrated methodology to link accelerometer and GPS data to assess community activity and participation in a group of transtibial amputees. Differences in K-levels do not appear to accurately reflect actual community activity or participation in higher functioning transtibial amputees.

  1. Microbial Activity in Active and Upper Permafrost Layers in Axel Heiberg Island

    NASA Astrophysics Data System (ADS)

    Vishnivetskaya, T. A.; Allan, J.; Cheng, K.; Chourey, K.; Hettich, R. L.; Layton, A.; Liu, X.; Murphy, J.; Mykytczuk, N. C.; Phelps, T. J.; Pfiffner, S. M.; Saarunya, G.; Stackhouse, B. T.; Whyte, L.; Onstott, T. C.

    2011-12-01

    Data on microbial communities and their metabolic activity in Arctic wetlands and underlying permafrost sediments is lacking. Samples were collected from different depths of a cryosol (D1, D2) and upper permafrost (D3) at the Axel Heiberg Island in July 2009. Upper cryosol has lower H2O but higher C and N content when compared to deeper horizons including upper permafrost layer. Deep cryosol and upper permafrost contained SO42- (155 and 132 ppm) and NO3- (0.12 and 0.10 ppm), respectively. The phylogenetic analyses of the environmental 16S rRNA genes showed the putative SRB were more abundant in permafrost (8%) than in cryosols, D1 (0.2%) and D2 (1.1%). Putative denitrifying bacteria varied along depth with near 0.1% in D1 and a significant increase in D2 (2.7%) and D3 (2.2%). Methanogens were not detected; methanotrophs were present at low levels in D3 (1%). Two sets of microcosms were set up. Firstly, anaerobic microcosms, amended with 10 mM glucose, sulfate or nitrate, were cultivated at varying temperatures (15o, 6o, and 0o C) for 10 months. Metabolic activity was monitored by measuring CO2 and CH4 every 3 months. A total of 89.5% of the D3-originated microcosms showed higher activity in comparison to cryosols in first 3 months. CH4 was not detected in these microcosms, whereas CO2 production was higher at 15o C or with glucose. Metaproteomics analyses of microcosms with higher levels of CO2 production indicated the presence of stress responsive proteins (e.g. DnaK, GroEL) and proteins essential for energy production and survival under carbon starvation (e.g. F0F1 ATP synthase, acyl-CoA dehydrogenase). These proteins have been previously shown to be up-regulated at low temperatures by permafrost bacteria. Metaproteomics data based on the draft sequences indicated the presence of proteins from the genera Bradyrhizobium, Sphingomonas, Lysinibacillus and Methylophilaceae and these bacteria were also detected by pyrosequencing. Secondly, a duplicate set of anaerobic

  2. A passive-flow microfluidic device for imaging latent HIV activation dynamics in single T cells

    PubMed Central

    Gearhart, Larisa M.; Miller-Jensen, Kathryn

    2015-01-01

    Quantifying cell-to-cell variability in drug response dynamics is important when evaluating therapeutic efficacy. For example, optimizing latency reversing agents (LRAs) for use in a clinical “activate-and-kill” strategy to purge the latent HIV reservoir in patients requires minimizing heterogeneous viral activation dynamics. To evaluate how heterogeneity in latent HIV activation varies across a range of LRAs, we tracked drug-induced response dynamics in single cells via live-cell imaging using a latent HIV–GFP reporter virus in a clonal Jurkat T cell line. To enable these studies in suspension cells, we designed a simple method to capture an array of single Jurkat T cells using a passive-flow microfluidic device. Our device, which does not require external pumps or tubing, can trap hundreds of cells within minutes with a high retention rate over 12 hours of imaging. Using this device, we quantified heterogeneity in viral activation stimulated by transcription factor (TF) activators and histone deacetylase (HDAC) inhibitors. Generally, TF activators resulted in both faster onset of viral activation and faster rates of production, while HDAC inhibitors resulted in more uniform onset times, but more heterogeneous rates of production. Finally, we demonstrated that while onset time of viral gene expression and rate of viral production together predict total HIV activation, rate and onset time were not correlated within the same individual cell, suggesting that these features are regulated independently. Overall, our results reveal drug-specific patterns of noisy HIV activation dynamics not previously identified in static single-cell assays, which may require consideration for the most effective activate-and-kill regime. PMID:26138068

  3. A passive-flow microfluidic device for imaging latent HIV activation dynamics in single T cells.

    PubMed

    Ramji, Ramesh; Wong, Victor C; Chavali, Arvind K; Gearhart, Larisa M; Miller-Jensen, Kathryn

    2015-09-01

    Quantifying cell-to-cell variability in drug response dynamics is important when evaluating therapeutic efficacy. For example, optimizing latency reversing agents (LRAs) for use in a clinical "activate-and-kill" strategy to purge the latent HIV reservoir in patients requires minimizing heterogeneous viral activation dynamics. To evaluate how heterogeneity in latent HIV activation varies across a range of LRAs, we tracked drug-induced response dynamics in single cells via live-cell imaging using a latent HIV-GFP reporter virus in a clonal Jurkat T cell line. To enable these studies in suspension cells, we designed a simple method to capture an array of single Jurkat T cells using a passive-flow microfluidic device. Our device, which does not require external pumps or tubing, can trap hundreds of cells within minutes with a high retention rate over 12 hours of imaging. Using this device, we quantified heterogeneity in viral activation stimulated by transcription factor (TF) activators and histone deacetylase (HDAC) inhibitors. Generally, TF activators resulted in both faster onset of viral activation and faster rates of production, while HDAC inhibitors resulted in more uniform onset times, but more heterogeneous rates of production. Finally, we demonstrated that while onset time of viral gene expression and rate of viral production together predict total HIV activation, rate and onset time were not correlated within the same individual cell, suggesting that these features are regulated independently. Overall, our results reveal drug-specific patterns of noisy HIV activation dynamics not previously identified in static single-cell assays, which may require consideration for the most effective activate-and-kill regime.

  4. Devices for Self-Monitoring Sedentary Time or Physical Activity: A Scoping Review

    PubMed Central

    Loveday, Adam; Pearson, Natalie; Edwardson, Charlotte; Yates, Thomas; Biddle, Stuart JH; Esliger, Dale W

    2016-01-01

    Background It is well documented that meeting the guideline levels (150 minutes per week) of moderate-to-vigorous physical activity (PA) is protective against chronic disease. Conversely, emerging evidence indicates the deleterious effects of prolonged sitting. Therefore, there is a need to change both behaviors. Self-monitoring of behavior is one of the most robust behavior-change techniques available. The growing number of technologies in the consumer electronics sector provides a unique opportunity for individuals to self-monitor their behavior. Objective The aim of this study is to review the characteristics and measurement properties of currently available self-monitoring devices for sedentary time and/or PA. Methods To identify technologies, four scientific databases were systematically searched using key terms related to behavior, measurement, and population. Articles published through October 2015 were identified. To identify technologies from the consumer electronic sector, systematic searches of three Internet search engines were also performed through to October 1, 2015. Results The initial database searches identified 46 devices and the Internet search engines identified 100 devices yielding a total of 146 technologies. Of these, 64 were further removed because they were currently unavailable for purchase or there was no evidence that they were designed for, had been used in, or could readily be modified for self-monitoring purposes. The remaining 82 technologies were included in this review (73 devices self-monitored PA, 9 devices self-monitored sedentary time). Of the 82 devices included, this review identified no published articles in which these devices were used for the purpose of self-monitoring PA and/or sedentary behavior; however, a number of technologies were found via Internet searches that matched the criteria for self-monitoring and provided immediate feedback on PA (ActiGraph Link, Microsoft Band, and Garmin Vivofit) and sedentary time

  5. [A fully-implantable active hearing device in congenital auricular atresia].

    PubMed

    Siegert, R; Neumann, C

    2014-07-01

    Active implantable hearing devices were primarily developed for sensorineural hearing loss. The vibrator coupling mechanisms were oriented towards normal middle ear anatomy and function. The aim of this project was to modify the only fully implantable hearing device with an implantable microphone for application in congenital auricular atresia, Carina™, and to introduce the modified device into the clinic. A special prosthesis was developed for the transducer and its individual coupling achieved by a special cramping system. The system was implanted in 5 patients with congenital auricular atresia. Audiological results were good; with patients' hearing gain exceeding 30 dB HL. Anatomic limits to the system's indications and technical drawbacks are also discussed. PMID:25056646

  6. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations.

    PubMed

    Mao, Ling-Feng; Ning, H; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-04-22

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter.

  7. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

    PubMed Central

    Mao, Ling-Feng; Ning, H.; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-01-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter. PMID:27103586

  8. Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

    NASA Astrophysics Data System (ADS)

    Mao, Ling-Feng; Ning, H.; Hu, Changjun; Lu, Zhaolin; Wang, Gaofeng

    2016-04-01

    Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter.

  9. A Novel Wearable Device for Food Intake and Physical Activity Recognition

    PubMed Central

    Farooq, Muhammad; Sazonov, Edward

    2016-01-01

    Presence of speech and motion artifacts has been shown to impact the performance of wearable sensor systems used for automatic detection of food intake. This work presents a novel wearable device which can detect food intake even when the user is physically active and/or talking. The device consists of a piezoelectric strain sensor placed on the temporalis muscle, an accelerometer, and a data acquisition module connected to the temple of eyeglasses. Data from 10 participants was collected while they performed activities including quiet sitting, talking, eating while sitting, eating while walking, and walking. Piezoelectric strain sensor and accelerometer signals were divided into non-overlapping epochs of 3 s; four features were computed for each signal. To differentiate between eating and not eating, as well as between sedentary postures and physical activity, two multiclass classification approaches are presented. The first approach used a single classifier with sensor fusion and the second approach used two-stage classification. The best results were achieved when two separate linear support vector machine (SVM) classifiers were trained for food intake and activity detection, and their results were combined using a decision tree (two-stage classification) to determine the final class. This approach resulted in an average F1-score of 99.85% and area under the curve (AUC) of 0.99 for multiclass classification. With its ability to differentiate between food intake and activity level, this device may potentially be used for tracking both energy intake and energy expenditure. PMID:27409622

  10. A Novel Wearable Device for Food Intake and Physical Activity Recognition.

    PubMed

    Farooq, Muhammad; Sazonov, Edward

    2016-01-01

    Presence of speech and motion artifacts has been shown to impact the performance of wearable sensor systems used for automatic detection of food intake. This work presents a novel wearable device which can detect food intake even when the user is physically active and/or talking. The device consists of a piezoelectric strain sensor placed on the temporalis muscle, an accelerometer, and a data acquisition module connected to the temple of eyeglasses. Data from 10 participants was collected while they performed activities including quiet sitting, talking, eating while sitting, eating while walking, and walking. Piezoelectric strain sensor and accelerometer signals were divided into non-overlapping epochs of 3 s; four features were computed for each signal. To differentiate between eating and not eating, as well as between sedentary postures and physical activity, two multiclass classification approaches are presented. The first approach used a single classifier with sensor fusion and the second approach used two-stage classification. The best results were achieved when two separate linear support vector machine (SVM) classifiers were trained for food intake and activity detection, and their results were combined using a decision tree (two-stage classification) to determine the final class. This approach resulted in an average F1-score of 99.85% and area under the curve (AUC) of 0.99 for multiclass classification. With its ability to differentiate between food intake and activity level, this device may potentially be used for tracking both energy intake and energy expenditure. PMID:27409622

  11. Photocatalytic activity of layered perovskite-like oxides in practically valuable chemical reactions

    NASA Astrophysics Data System (ADS)

    Rodionov, I. A.; Zvereva, I. A.

    2016-03-01

    The photocatalytic properties of layered perovskite-like oxides corresponding to the Ruddlesen–Popper, Dion–Jacobson and Aurivillius phases are considered. Of the photocatalytic reactions, the focus is on the reactions of water splitting, hydrogen evolution from aqueous solutions of organic substances and degradation of model organic pollutants. Possibilities to conduct these reactions under UV and visible light in the presence of layered perovskite-like oxides and composite photocatalysts based on them are shown. The specific surface area, band gap energy, particle morphology, cation and anion doping and surface modification are considered as factors that affect the photocatalytic activity. Special attention is paid to the possibilities to enhance the photocatalytic activity by intercalation, ion exchange and exfoliation, which are inherent in this class of compounds. Conclusions are made about the prospects for the use of layered perovskite-like oxides in photocatalysis. The bibliography includes 253 references.

  12. Photocatalytic activity of layered perovskite-like oxides in practically valuable chemical reactions

    NASA Astrophysics Data System (ADS)

    Rodionov, I. A.; Zvereva, I. A.

    2016-03-01

    The photocatalytic properties of layered perovskite-like oxides corresponding to the Ruddlesen-Popper, Dion-Jacobson and Aurivillius phases are considered. Of the photocatalytic reactions, the focus is on the reactions of water splitting, hydrogen evolution from aqueous solutions of organic substances and degradation of model organic pollutants. Possibilities to conduct these reactions under UV and visible light in the presence of layered perovskite-like oxides and composite photocatalysts based on them are shown. The specific surface area, band gap energy, particle morphology, cation and anion doping and surface modification are considered as factors that affect the photocatalytic activity. Special attention is paid to the possibilities to enhance the photocatalytic activity by intercalation, ion exchange and exfoliation, which are inherent in this class of compounds. Conclusions are made about the prospects for the use of layered perovskite-like oxides in photocatalysis. The bibliography includes 253 references.

  13. Activity induces traveling waves, vortices and spatiotemporal chaos in a model actomyosin layer

    NASA Astrophysics Data System (ADS)

    Ramaswamy, Rajesh; Jülicher, Frank

    2016-02-01

    Inspired by the actomyosin cortex in biological cells, we investigate the spatiotemporal dynamics of a model describing a contractile active polar fluid sandwiched between two external media. The external media impose frictional forces at the interface with the active fluid. The fluid is driven by a spatially-homogeneous activity measuring the strength of the active stress that is generated by processes consuming a chemical fuel. We observe that as the activity is increased over two orders of magnitude the active polar fluid first shows spontaneous flow transition followed by transition to oscillatory dynamics with traveling waves and traveling vortices in the flow field. In the flow-tumbling regime, the active polar fluid also shows transition to spatiotemporal chaos at sufficiently large activities. These results demonstrate that level of activity alone can be used to tune the operating point of actomyosin layers with qualitatively different spatiotemporal dynamics.

  14. Activity induces traveling waves, vortices and spatiotemporal chaos in a model actomyosin layer

    PubMed Central

    Ramaswamy, Rajesh; Jülicher, Frank

    2016-01-01

    Inspired by the actomyosin cortex in biological cells, we investigate the spatiotemporal dynamics of a model describing a contractile active polar fluid sandwiched between two external media. The external media impose frictional forces at the interface with the active fluid. The fluid is driven by a spatially-homogeneous activity measuring the strength of the active stress that is generated by processes consuming a chemical fuel. We observe that as the activity is increased over two orders of magnitude the active polar fluid first shows spontaneous flow transition followed by transition to oscillatory dynamics with traveling waves and traveling vortices in the flow field. In the flow-tumbling regime, the active polar fluid also shows transition to spatiotemporal chaos at sufficiently large activities. These results demonstrate that level of activity alone can be used to tune the operating point of actomyosin layers with qualitatively different spatiotemporal dynamics. PMID:26877263

  15. Classification of team sport activities using a single wearable tracking device.

    PubMed

    Wundersitz, Daniel W T; Josman, Casey; Gupta, Ritu; Netto, Kevin J; Gastin, Paul B; Robertson, Sam

    2015-11-26

    Wearable tracking devices incorporating accelerometers and gyroscopes are increasingly being used for activity analysis in sports. However, minimal research exists relating to their ability to classify common activities. The purpose of this study was to determine whether data obtained from a single wearable tracking device can be used to classify team sport-related activities. Seventy-six non-elite sporting participants were tested during a simulated team sport circuit (involving stationary, walking, jogging, running, changing direction, counter-movement jumping, jumping for distance and tackling activities) in a laboratory setting. A MinimaxX S4 wearable tracking device was worn below the neck, in-line and dorsal to the first to fifth thoracic vertebrae of the spine, with tri-axial accelerometer and gyroscope data collected at 100Hz. Multiple time domain, frequency domain and custom features were extracted from each sensor using 0.5, 1.0, and 1.5s movement capture durations. Features were further screened using a combination of ANOVA and Lasso methods. Relevant features were used to classify the eight activities performed using the Random Forest (RF), Support Vector Machine (SVM) and Logistic Model Tree (LMT) algorithms. The LMT (79-92% classification accuracy) outperformed RF (32-43%) and SVM algorithms (27-40%), obtaining strongest performance using the full model (accelerometer and gyroscope inputs). Processing time can be reduced through feature selection methods (range 1.5-30.2%), however a trade-off exists between classification accuracy and processing time. Movement capture duration also had little impact on classification accuracy or processing time. In sporting scenarios where wearable tracking devices are employed, it is both possible and feasible to accurately classify team sport-related activities. PMID:26472301

  16. Classification of team sport activities using a single wearable tracking device.

    PubMed

    Wundersitz, Daniel W T; Josman, Casey; Gupta, Ritu; Netto, Kevin J; Gastin, Paul B; Robertson, Sam

    2015-11-26

    Wearable tracking devices incorporating accelerometers and gyroscopes are increasingly being used for activity analysis in sports. However, minimal research exists relating to their ability to classify common activities. The purpose of this study was to determine whether data obtained from a single wearable tracking device can be used to classify team sport-related activities. Seventy-six non-elite sporting participants were tested during a simulated team sport circuit (involving stationary, walking, jogging, running, changing direction, counter-movement jumping, jumping for distance and tackling activities) in a laboratory setting. A MinimaxX S4 wearable tracking device was worn below the neck, in-line and dorsal to the first to fifth thoracic vertebrae of the spine, with tri-axial accelerometer and gyroscope data collected at 100Hz. Multiple time domain, frequency domain and custom features were extracted from each sensor using 0.5, 1.0, and 1.5s movement capture durations. Features were further screened using a combination of ANOVA and Lasso methods. Relevant features were used to classify the eight activities performed using the Random Forest (RF), Support Vector Machine (SVM) and Logistic Model Tree (LMT) algorithms. The LMT (79-92% classification accuracy) outperformed RF (32-43%) and SVM algorithms (27-40%), obtaining strongest performance using the full model (accelerometer and gyroscope inputs). Processing time can be reduced through feature selection methods (range 1.5-30.2%), however a trade-off exists between classification accuracy and processing time. Movement capture duration also had little impact on classification accuracy or processing time. In sporting scenarios where wearable tracking devices are employed, it is both possible and feasible to accurately classify team sport-related activities.

  17. Electrooptical devices

    NASA Astrophysics Data System (ADS)

    Hurwitz, C. E.

    1980-03-01

    This report covers work carried out with support of the Department of the Air Force during the period 1 October 1979 through 31 March 1980. A part of this support was provided by the Rome Air Development Center. CW operation at temperatures up to 55 C has been achieved for GaInAsP/InP double-heterostructure (DH) lasers emitting at 1.5 micrometers, which were grown without a GaInAsP buffer layer. These devices are of interest for use as sources in fiber-optics communications systems, since the lowest transmission loss reported for fused-silica optical fibers occurs at 1.55 micrometers. Surface passivation techniques developed for InP and GaInAsP avalanche photodiodes have resulted in reductions of dark current as large as four orders of magnitude, to values as low as .0000016 A/sq cm at 0.9 V(b) where V(b) is the breakdown voltage. Devices consisting entirely of InP have been passivated with plasma-deposited Si3N4, and those with a GaInAsP layer but with the p-n junction in InP have been passivated with polyimide. Neither of these techniques successfully reduces dark currents in devices with the p-n junction in the GaInAsP, but a film of photoresist sprayed with SF6 as the propellant has given excellent results. The electrical characteristics in InP ion implanted with Sn, Ge, Si, and C have been investigated. All of these column IV elements yielded n-type conductivity and Sn, Ge, and Si showed high electrical activation; however, implanted C was found to have a net electrical activation of only about 5 percent.

  18. Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths.

    PubMed

    Khanna, Amit; Subramanian, Ananth Z; Häyrinen, Markus; Selvaraja, Shankar; Verheyen, Peter; Van Thourhout, Dries; Honkanen, Seppo; Lipsanen, Harri; Baets, Roel

    2014-03-10

    A CMOS compatible post-processing method to reduce optical losses in silicon nitride (Si(3)N(4)) integrated optical waveguides is demonstrated. Using thin layer atomic layer deposition (ALD) of aluminum oxide (Al(2)O(3)) we demonstrate that surface roughness can be reduced. A 40 nm thick Al(2)O(3) layer is deposited by ALD over Si(3)N(4) based strip waveguides and its influence on the surface roughness and the waveguide loss is studied. As a result, an improvement in the waveguide loss, from very high loss (60 dB/cm) to low-loss regime (~5 dB/cm) is reported for a 220 nm x 500 nm Si(3)N(4) wire at 900 nm wavelength. This opens prospects to implement very low loss waveguides.

  19. [Effects of human engineering activities on permafrost active layer and its environment in northern Qinghai-Tibetan plateau].

    PubMed

    Guo, Zhenggang; Wu, Qingbo; Niu, Fujun

    2006-11-01

    With disturbed and undisturbed belts during the construction of Qinghai-Tibet highway as test objectives, this paper studied the effects of human engineering activities on the permafrost ecosystem in northern Qinghai-Tibetan plateau. The results showed that the thickness of permafrost active layer was smaller in disturbed than in undisturbed belt, and decreased with increasing altitude in undisturbed belt while no definite pattern was observed in disturbed belt. Different vegetation types had different effects on the thickness of permafrost active layer, being decreased in the order of steppe > shrub > meadow. In the two belts, altitude was the main factor affecting the vertical distribution of soil moisture, but vegetation type was also an important affecting factor if the altitude was similar. Due to the human engineering activities, soil temperature in summer was lower in disturbed than in undisturbed belt.

  20. Diversity of aerobic methanotrophic bacteria in a permafrost active layer soil of the Lena Delta, Siberia.

    PubMed

    Liebner, Susanne; Rublack, Katja; Stuehrmann, Torben; Wagner, Dirk

    2009-01-01

    With this study, we present first data on the diversity of aerobic methanotrophic bacteria (MOB) in an Arctic permafrost active layer soil of the Lena Delta, Siberia. Applying denaturing gradient gel electrophoresis and cloning of 16S ribosomal ribonucleic acid (rRNA) and pmoA gene fragments of active layer samples, we found a general restriction of the methanotrophic diversity to sequences closely related to the genera Methylobacter and Methylosarcina, both type I MOB. In contrast, we revealed a distinct species-level diversity. Based on phylogenetic analysis of the 16S rRNA gene, two new clusters of MOB specific for the permafrost active layer soil of this study were found. In total, 8 out of 13 operational taxonomic units detected belong to these clusters. Members of these clusters were closely related to Methylobacter psychrophilus and Methylobacter tundripaludum, both isolated from Arctic environments. A dominance of MOB closely related to M. psychrophilus and M. tundripaludum was confirmed by an additional pmoA gene analysis. We used diversity indices such as the Shannon diversity index or the Chao1 richness estimator in order to compare the MOB community near the surface and near the permafrost table. We determined a similar diversity of the MOB community in both depths and suggest that it is not influenced by the extreme physical and geochemical gradients in the active layer. PMID:18592300

  1. Active Layer and Moisture Measurements for Intensive Site 0 and 1, Barrow, Alaska

    DOE Data Explorer

    John Peterson

    2015-04-17

    These are measurements of Active Layer Thickness collected along several lines beginning in September, 2011 to the present. The data were collected at several time periods along the Site0 L2 Line, the Site1 AB Line, and an ERT Monitoring Line near Area A in Site1.

  2. Extending the Diffuse Layer Model of Surface Acidity Behavior: III. Estimating Bound Site Activity Coefficients

    EPA Science Inventory

    Although detailed thermodynamic analyses of the 2-pK diffuse layer surface complexation model generally specify bound site activity coefficients for the purpose of accounting for those non-ideal excess free energies contributing to bound site electrochemical potentials, in applic...

  3. Groundwater hydrochemistry in the active layer of the proglacial zone, Finsterwalderbreen, Svalbard

    USGS Publications Warehouse

    Cooper, R.J.; Wadham, J.L.; Tranter, M.; Hodgkins, R.; Peters, N.E.

    2002-01-01

    Glacial bulk meltwaters and active-layer groundwaters were sampled from the proglacial zone of Finsterwalderbreen during a single melt season in 1999, in order to determine the geochemical processes that maintain high chemical weathering rates in the proglacial zone of this glacier. Results demonstrate that the principle means of solute acquisition is the weathering of highly reactive moraine and fluvial active-layer sediments by supra-permafrost groundwaters. Active-layer groundwater derives from the thaw of the proglacial snowpack, buried ice and glacial bulk meltwaters. Groundwater evolves by sulphide oxidation and carbonate dissolution. Evaporation- and freeze-concentration of groundwater in summer and winter, respectively produce Mg-Ca-sulphate salts on the proglacial surface. Re-dissolution of these salts in early summer produces groundwaters that are supersaturated with respect to calcite. There is a pronounced spatial pattern to the geochemical evolution of groundwater. Close to the main proglacial channel, active layer sediments are flushed diurnally by bulk meltwaters. Here, Mg-Ca-sulphate deposits become exhausted in the early season and geochemical evolution proceeds by a combination of sulphide oxidation and carbonate dissolution. At greater distances from the channel, the dissolution of Mg-Ca-sulphate salts is a major influence and dilution by the bulk meltwaters is relatively minor. The influence of sulphate salt dissolution decreases during the sampling season, as these salts are exhausted and waters become increasingly routed by subsurface flowpaths. ?? 2002 Elsevier Science B.V. All rights reserved.

  4. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2016-06-01

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (ScxAl1-xN) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S21 measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  5. Investigation of chemical distribution in the oxide bulk layer in Ti/HfO{sub 2}/Pt memory devices using x-ray photoelectron spectroscopy

    SciTech Connect

    Jiang, Ran; Du, Xianghao; Han, Zuyin; Sun, Weideng

    2015-04-27

    Resistive switching (RS) of Ti/HfO{sub 2}/Pt memory devices was studied using X-ray photoelectron spectroscopy. Hf{sup 4+} monotonously decreases with depth increasing towards to HfO{sub 2}/Pt interface in low resistance state, while a fluctuation distribution of Hf{sup 4+} is shown in high resistance state (HRS) and in the pristine Ti/HfO{sub 2}/Pt devices (without any SET or RESET process). It is explained by the existence of locally accumulated oxygen vacancies (clusters) in the oxide bulk layer in HRS and pristine states. A dynamic model of RS processes was proposed that the oxygen vacancy clusters dominantly determines the resistivity by the connecting/rupture between the neighbor cluster sites in the bulk.

  6. Methods, microfluidic devices, and systems for detection of an active enzymatic agent

    DOEpatents

    Sommer, Gregory J; Hatch, Anson V; Singh, Anup K; Wang, Ying-Chih

    2014-10-28

    Embodiments of the present invention provide methods, microfluidic devices, and systems for the detection of an active target agent in a fluid sample. A substrate molecule is used that contains a sequence which may cleave in the presence of an active target agent. A SNAP25 sequence is described, for example, that may be cleaved in the presence of Botulinum Neurotoxin. The substrate molecule includes a reporter moiety. The substrate molecule is exposed to the sample, and resulting reaction products separated using electrophoretic separation. The elution time of the reporter moiety may be utilized to identify the presence or absence of the active target agent.

  7. Protein assembly onto patterned microfabricated devices through enzymatic activation of fusion pro-tag.

    PubMed

    Lewandowski, Angela T; Yi, Hyunmin; Luo, Xiaolong; Payne, Gregory F; Ghodssi, Reza; Rubloff, Gary W; Bentley, William E

    2008-02-15

    We report a versatile approach for covalent surface-assembly of proteins onto selected electrode patterns of pre-fabricated devices. Our approach is based on electro-assembly of the aminopolysaccharide chitosan scaffold as a stable thin film onto patterned conductive surfaces of the device, which is followed by covalent assembly of the target protein onto the scaffold surface upon enzymatic activation of the protein's "pro-tag." For our demonstration, the model target protein is green fluorescent protein (GFP) genetically fused with a pentatyrosine pro-tag at its C-terminus, which assembles onto both two-dimensional chips and within fully packaged microfluidic devices in situ and under flow. Our surface-assembly approach enables spatial selectivity and orientational control under mild experimental conditions. We believe that our integrated approach harnessing genetic manipulation, in situ enzymatic activation, and electro-assembly makes it advantageous for a wide variety of bioMEMS and biosensing applications that require facile "biofunctionalization" of microfabricated devices. PMID:17625789

  8. Activation of ethylenediaminetetraacetic acid by a 940 nm diode laser for enhanced removal of smear layer.

    PubMed

    Lagemann, Manfred; George, Roy; Chai, Lei; Walsh, Laurence J

    2014-08-01

    Laser enhancement of ethylenediaminetetraacetic acid with cetrimide (EDTAC) has previously been shown to increase removal of smear layer, for middle-infrared erbium lasers. This study evaluated the efficiency of EDTAC activation using a near-infrared-pulsed 940 nm laser delivered by plain fibre tips into 15% EDTAC or 3% hydrogen peroxide. Root canals in 4 groups of 10 single roots were prepared using rotary files, with controls for the presence and absence of smear layer. After laser treatment (80 mJ pulse(-1) , 50 Hz, 6 cycles of 10 s), roots were split and the apical, middle and coronal thirds of the canal were examined using scanning electron microscopy, with the area of dentine tubules determined by a validated quantitative image analysis method. Lasing EDTAC considerably improved smear layer removal, while lasing into peroxide gave minimal smear layer removal. The laser protocol used was more effective for smear layer removal than the 'gold standard' protocol using EDTAC with sodium hypochlorite (NaOCl). In addition, lasers may also provide a benefit through photothermal disinfection. Further research is needed to optimise irrigant activation protocols using near-infrared diode lasers of other wavelengths.

  9. A Novel Surface Structure Consisting of Contact-active Antibacterial Upper-layer and Antifouling Sub-layer Derived from Gemini Quaternary Ammonium Salt Polyurethanes

    PubMed Central

    He, Wei; Zhang, Yi; Li, Jiehua; Gao, Yunlong; Luo, Feng; Tan, Hong; Wang, Kunjie; Fu, Qiang

    2016-01-01

    Contact-active antibacterial surfaces play a vital role in preventing bacterial contamination of artificial surfaces. In the past, numerous researches have been focused on antibacterial surfaces comprising of antifouling upper-layer and antibacterial sub-layer. In this work, we demonstrate a reversed surface structure which integrate antibacterial upper-layer and antifouling sub-layer. These surfaces are prepared by simply casting gemini quaternary ammonium salt waterborne polyurethanes (GWPU) and their blends. Due to the high interfacial energy of gemini quaternary ammonium salt (GQAS), chain segments containing GQAS can accumulate at polymer/air interface to form an antibacterial upper-layer spontaneously during the film formation. Meanwhile, the soft segments composed of polyethylene glycol (PEG) formed the antifouling sub-layer. Our findings indicate that the combination of antibacterial upper-layer and antifouling sub-layer endow these surfaces strong, long-lasting antifouling and contact-active antibacterial properties, with a more than 99.99% killing efficiency against both gram-positive and gram-negative bacteria attached to them. PMID:27561546

  10. A Novel Surface Structure Consisting of Contact-active Antibacterial Upper-layer and Antifouling Sub-layer Derived from Gemini Quaternary Ammonium Salt Polyurethanes

    NASA Astrophysics Data System (ADS)

    He, Wei; Zhang, Yi; Li, Jiehua; Gao, Yunlong; Luo, Feng; Tan, Hong; Wang, Kunjie; Fu, Qiang

    2016-08-01

    Contact-active antibacterial surfaces play a vital role in preventing bacterial contamination of artificial surfaces. In the past, numerous researches have been focused on antibacterial surfaces comprising of antifouling upper-layer and antibacterial sub-layer. In this work, we demonstrate a reversed surface structure which integrate antibacterial upper-layer and antifouling sub-layer. These surfaces are prepared by simply casting gemini quaternary ammonium salt waterborne polyurethanes (GWPU) and their blends. Due to the high interfacial energy of gemini quaternary ammonium salt (GQAS), chain segments containing GQAS can accumulate at polymer/air interface to form an antibacterial upper-layer spontaneously during the film formation. Meanwhile, the soft segments composed of polyethylene glycol (PEG) formed the antifouling sub-layer. Our findings indicate that the combination of antibacterial upper-layer and antifouling sub-layer endow these surfaces strong, long-lasting antifouling and contact-active antibacterial properties, with a more than 99.99% killing efficiency against both gram-positive and gram-negative bacteria attached to them.

  11. A Novel Surface Structure Consisting of Contact-active Antibacterial Upper-layer and Antifouling Sub-layer Derived from Gemini Quaternary Ammonium Salt Polyurethanes.

    PubMed

    He, Wei; Zhang, Yi; Li, Jiehua; Gao, Yunlong; Luo, Feng; Tan, Hong; Wang, Kunjie; Fu, Qiang

    2016-01-01

    Contact-active antibacterial surfaces play a vital role in preventing bacterial contamination of artificial surfaces. In the past, numerous researches have been focused on antibacterial surfaces comprising of antifouling upper-layer and antibacterial sub-layer. In this work, we demonstrate a reversed surface structure which integrate antibacterial upper-layer and antifouling sub-layer. These surfaces are prepared by simply casting gemini quaternary ammonium salt waterborne polyurethanes (GWPU) and their blends. Due to the high interfacial energy of gemini quaternary ammonium salt (GQAS), chain segments containing GQAS can accumulate at polymer/air interface to form an antibacterial upper-layer spontaneously during the film formation. Meanwhile, the soft segments composed of polyethylene glycol (PEG) formed the antifouling sub-layer. Our findings indicate that the combination of antibacterial upper-layer and antifouling sub-layer endow these surfaces strong, long-lasting antifouling and contact-active antibacterial properties, with a more than 99.99% killing efficiency against both gram-positive and gram-negative bacteria attached to them. PMID:27561546

  12. Improving the dielectric properties of an electrowetting-on-dielectric microfluidic device with a low-pressure chemical vapor deposited Si3N4 dielectric layer

    PubMed Central

    Shen, Hsien-Hua; Chung, Lung-Yuan

    2015-01-01

    Dielectric breakdown is a common problem in a digital microfluidic system, which limits its application in chemical or biomedical applications. We propose a new fabrication of an electrowetting-on-dielectric (EWOD) device using Si3N4 deposited by low-pressure chemical vapor deposition (LPCVD) as a dielectric layer. This material exhibits a greater relative permittivity, purity, uniformity, and biocompatibility than polymeric films. These properties also increase the breakdown voltage of a dielectric layer and increase the stability of an EWOD system when applied in biomedical research. Medium droplets with mouse embryos were manipulated in this manner. The electrical properties of the Si3N4 dielectric layer—breakdown voltage, refractive index, relative permittivity, and variation of contact angle with input voltage—were investigated and compared with a traditional Si3N4 dielectric layer deposited as a plasma-enhanced chemical vapor deposition to confirm the potential of LPCVD Si3N4 applied as the dielectric layer of an EWOD digital microfluidic system. PMID:25825614

  13. Quantum Efficiency and Bandgap Analysis for Combinatorial Photovoltaics: Sorting Activity of Cu–O Compounds in All-Oxide Device Libraries

    PubMed Central

    2014-01-01

    All-oxide-based photovoltaics (PVs) encompass the potential for extremely low cost solar cells, provided they can obtain an order of magnitude improvement in their power conversion efficiencies. To achieve this goal, we perform a combinatorial materials study of metal oxide based light absorbers, charge transporters, junctions between them, and PV devices. Here we report the development of a combinatorial internal quantum efficiency (IQE) method. IQE measures the efficiency associated with the charge separation and collection processes, and thus is a proxy for PV activity of materials once placed into devices, discarding optical properties that cause uncontrolled light harvesting. The IQE is supported by high-throughput techniques for bandgap fitting, composition analysis, and thickness mapping, which are also crucial parameters for the combinatorial investigation cycle of photovoltaics. As a model system we use a library of 169 solar cells with a varying thickness of sprayed titanium dioxide (TiO2) as the window layer, and covarying thickness and composition of binary compounds of copper oxides (Cu–O) as the light absorber, fabricated by Pulsed Laser Deposition (PLD). The analysis on the combinatorial devices shows the correlation between compositions and bandgap, and their effect on PV activity within several device configurations. The analysis suggests that the presence of Cu4O3 plays a significant role in the PV activity of binary Cu–O compounds. PMID:24410367

  14. Quantum efficiency and bandgap analysis for combinatorial photovoltaics: sorting activity of Cu-O compounds in all-oxide device libraries.

    PubMed

    Anderson, Assaf Y; Bouhadana, Yaniv; Barad, Hannah-Noa; Kupfer, Benjamin; Rosh-Hodesh, Eli; Aviv, Hagit; Tischler, Yaakov R; Rühle, Sven; Zaban, Arie

    2014-02-10

    All-oxide-based photovoltaics (PVs) encompass the potential for extremely low cost solar cells, provided they can obtain an order of magnitude improvement in their power conversion efficiencies. To achieve this goal, we perform a combinatorial materials study of metal oxide based light absorbers, charge transporters, junctions between them, and PV devices. Here we report the development of a combinatorial internal quantum efficiency (IQE) method. IQE measures the efficiency associated with the charge separation and collection processes, and thus is a proxy for PV activity of materials once placed into devices, discarding optical properties that cause uncontrolled light harvesting. The IQE is supported by high-throughput techniques for bandgap fitting, composition analysis, and thickness mapping, which are also crucial parameters for the combinatorial investigation cycle of photovoltaics. As a model system we use a library of 169 solar cells with a varying thickness of sprayed titanium dioxide (TiO2) as the window layer, and covarying thickness and composition of binary compounds of copper oxides (Cu-O) as the light absorber, fabricated by Pulsed Laser Deposition (PLD). The analysis on the combinatorial devices shows the correlation between compositions and bandgap, and their effect on PV activity within several device configurations. The analysis suggests that the presence of Cu4O3 plays a significant role in the PV activity of binary Cu-O compounds.

  15. Electrical and mechanical characterization of nanoscale-layered cellulose-based electro-active paper.

    PubMed

    Yun, Gyu-Young; Yun, Ki-Ju; Kim, Joo-Hyung; Kim, Jaehwan

    2011-01-01

    In order to understand the electro-mechanical behavior of piezoelectric electro active paper (EAPap), the converse and direct piezoelectric characterization of cellulose EAPap was studied and compared. A delay between the electrical field and the induced strain of EAPap was observed due to the inner nano-voids or the localized amorphous regions in layer-by-layered structure to capture or hold the electrical charges and remnant ions. The linear relation between electric field and induced strain is also observed. The electro-mechanical performance of EAPap is discussed in detail in this paper.

  16. Thermal regime of active layer at two lithologically contrasting sites on James Ross Island, Antarctic Peninsula.

    NASA Astrophysics Data System (ADS)

    Hrbáček, Filip; Nývlt, Daniel; Láska, Kamil

    2016-04-01

    Antarctic Peninsula region (AP) represents one of the most rapidly warming parts of our planet in the last 50 years. Despite increasing research activities along both western and eastern sides of AP in last decades, there is still a lot of gaps in our knowledge relating to permafrost, active layer and its thermal and physical properties. This study brings new results of active layer monitoring on James Ross Island, which is the largest island in northern AP. Its northern part, Ulu Peninsula, is the largest ice-free area (more than 200 km2) in the region. Due its large area, we focused this study on sites located in different lithologies, which would affect local thermal regime of active layer. Study site (1) at Abernethy Flats area (41 m a.s.l.) lies ~7 km from northern coast. Lithologically is formed by disintegrated Cretaceous calcareous sandstones and siltstones of the Santa Marta Formation. Study site (2) is located at the northern slopes of Berry Hill (56 m a.s.l.), about 0.4 km from northern coastline. Lithology is composed of muddy to intermediate diamictites, tuffaceous siltstones to fine grained sandstones of the Mendel Formation. Data of air temperature at 2 meters above ground and the active layer temperatures at 75 cm deep profiles were obtained from both sites in period 1 January 2012 to 31 December 2014. Small differences were found when comparing mean air temperatures and active temperatures at 5 and 75 cm depth in the period 2012-2014. While the mean air temperatures varied between -7.7 °C and -7.0 °C, the mean ground temperatures fluctuated between -6.6 °C and -6.1 °C at 5 cm and -6.9 °C and -6.0 °C at 75 cm at Abernethy Flats and Berry Hill slopes respectively. Even though ground temperature differences along the profiles weren't pronounced during thawing seasons, the maximum active layer thickness was significantly larger at Berry Hill slopes (80 to 82 cm) than at Abernethy Flats (52 to 64 cm). We assume this differences are affected by

  17. Detection of high tritium activity on the central titanium electrode of a plasma focus device

    SciTech Connect

    Rout, R.K.; Spinivasan, M.; Shyam, A.; Chitra, V. )

    1991-03-01

    In this paper a 2-kJ Mather plasma focus device is used to deuterate the top end surface (or tip) of its central titanium electrode to investigate the occurrence of anomalous nuclear reactions in the context of the cold fusion phenomenon. The tip of the central titanium electrode is found to develop at least a few tens of microcuries of tritium after several plasma focus discharges. Neither the tritium impurity level in the deuterium gas used in the experiment nor the tritium branch of the d-d reactions that are known to occur in plasma focus devices can account for such activity in the electrode. Anomalous nuclear reactions in the deuterated titanium lattice appear to be the most probable source of this high activity.

  18. Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing.

    PubMed

    Dhoore, Sören; Uvin, Sarah; Van Thourhout, Dries; Morthier, Geert; Roelkens, Gunther

    2016-06-13

    We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing. The proposed coupling structures are expected to pave the way for transfer-printing-based heterogeneous integration of active III-V devices such as semiconductor optical amplifiers (SOAs), photodetectors, electro-absorption modulators (EAMs) and single wavelength lasers on silicon photonic integrated circuits. PMID:27410317

  19. Flame-powered trigger device for activating explosion-suppression barrier. Rept. of Investigations/1991

    SciTech Connect

    Cortese, R.A.; Sapko, M.J.

    1991-01-01

    The U.S. Bureau of Mines has developed a flame-radiation-powered trigger device to explosively activate suppression barriers to quench gas and coal dust explosions. The major component of the device is a silicon solar panel, which converts radiation from the developing explosion into electrical energy to initiate an electric detonator, which releases an extinguishing agent into the advancing flame front. Solar panels that are rated to produce 20 W of electrical power when exposed to the sunlight are producing about 200 W when exposed to a full-scale dust explosion. The solar panel is electrically isolated from the detonator by a pressure-sensitive switch until the arrival of the precursor pressure pulse, which always precedes a deflagration. The combination of pressure arming and flame-powered photogenerator prevents false barrier activation and requires no external power supply.

  20. An active drop counting device using condenser microphone for superheated emulsion detector

    SciTech Connect

    Das, Mala; Marick, C.; Kanjilal, D.; Saha, S.

    2008-11-15

    An active device for superheated emulsion detector is described. A capacitive diaphragm sensor or condenser microphone is used to convert the acoustic pulse of drop nucleation to electrical signal. An active peak detector is included in the circuit to avoid multiple triggering of the counter. The counts are finally recorded by a microprocessor based data acquisition system. Genuine triggers, missed by the sensor, were studied using a simulated clock pulse. The neutron energy spectrum of {sup 252}Cf fission neutron source was measured using the device with R114 as the sensitive liquid and compared with the calculated fission neutron energy spectrum of {sup 252}Cf. Frequency analysis of the detected signals was also carried out.

  1. Electromagnetic and structural coupled finite element analysis of active control in an anti-vibration device

    SciTech Connect

    Nakamoto, Eiji; Chen, Q.M.; Takeuchi, Hitoshi; Brauer, J.R.

    1997-03-01

    An active control model of an anti-vibration device is analyzed using a coupled electromagnetic and structural finite element technique. The model consists of two parallel conducting wires moving in a uniform magnetic field. Displacement and velocity of the wires are detected and transformed into voltages. Those voltages are fed back to each wire to control the motion by Lorentz force. Calculated response of the motion is shown to agree with the theory of the equivalent mechanical model.

  2. Active layer temperature in two Cryosols from King George Island, Maritime Antarctica

    NASA Astrophysics Data System (ADS)

    Michel, Roberto F. M.; Schaefer, Carlos Ernesto G. R.; Poelking, Everton L.; Simas, Felipe N. B.; Fernandes Filho, Elpidio I.; Bockheim, James G.

    2012-06-01

    This study presents soil temperature and moisture regimes from March 2008 to January 2009 for two active layer monitoring (CALM-S) sites at King George Island, Maritime Antarctica. The monitoring sites were installed during the summer of 2008 and consist of thermistors (accuracy of ± 0.2 °C), arranged vertically with probes at different depths and one soil moisture probe placed at the bottommost layer at each site (accuracy of ± 2.5%), recording data at hourly intervals in a high capacity datalogger. The active layer thermal regime in the studied period for both soils was typical of periglacial environments, with extreme variation in surface temperature during summer resulting in frequent freeze and thaw cycles. The great majority of the soil temperature readings during the eleven month period was close to 0 °C, resulting in low values of freezing and thawing degree days. Both soils have poor thermal apparent diffusivity but values were higher for the soil from Fildes Peninsula. The different moisture regimes for the studied soils were attributed to soil texture, with the coarser soil presenting much lower water content during all seasons. Differences in water and ice contents may explain the contrasting patterns of freezing of the studied soils, being two-sided for the coarser soil and one-sided for the loamy soil. The temperature profile of the studied soils during the eleven month period indicates that the active layer reached a maximum depth of approximately 92 cm at Potter and 89 cm at Fildes. Longer data sets are needed for more conclusive analysis on active layer behaviour in this part of Antarctica.

  3. Three-dimensional integration of passive and active polymer waveguide devices

    NASA Astrophysics Data System (ADS)

    Garner, Sean Matthew

    This thesis presents the design, fabrication, and experimental results of three dimensionally integrated optics. This vertical and horizontal integration of polymer waveguide structures increases the integration density, reduces interconnection routing difficulties, and expands the functional diversity of adjacent devices. The devices discussed depend on the fabrication of vertical slopes using unconventional photolithography and reactive ion etching techniques. The slopes produced allow fully functional three dimensionally integrated optics that incorporate both passive and active waveguide elements. Passive structures such as vertical waveguide bends, power splitters, and polarization splitters enable three dimensional routing of the optical power among multiple vertical levels. Single mode vertical waveguide bends are demonstrated with polarization insensitive excess losses of 0.2dB. These waveguide structures incorporated bending angles up to 1.5°. Three dimensional 1 x 4 splitters, possess excess losses of 0.5dB and show the ability to fabricate complex waveguide structures in both the horizontal and vertical directions. These vertical power splitters showed controllable power splitting ratios in the output waveguides by controlling the spin cast film thickness within 0.5μM and the slope angle within 0.5°. The vertical polarization splitters incorporated birefringent polymer materials to create an adiabatic mode splitter. These possessed power extinction ratios of about 15dB for both input polarizations. The passive structures of vertical waveguide bends, power splitters, and polarization splitters enable practical three dimensional integrated optics by providing vertical routing capability of the optical signal analogous to those typically found in conventional two dimensional waveguide interconnects. Three dimensionally integrated active devices such as low-loss hybrid modulators and vertically integrated modulator designs create fully functional

  4. The origin of convective structures in the scrape-off layer of linear magnetic fusion devices investigated by fast imaging

    SciTech Connect

    Antar, G. Y.; Yu, J. H.; Tynan, G.

    2007-02-15

    A fast imaging camera is used to unveil the spatio-temporal properties of radially convective events in the CSDX linear plasma device [M. J. Burin et al., Phys. Plasmas, 12, 052320 (2005)]. The exposure time is set to 1 {mu}s and the time between frames to 10 {mu}s. The time series from a Langmuir probe and from a pixel in the 50000-frame movie are compared and cross-correlated. Excellent agreement between the two diagnostics is found for spatial scales greater than 2.5 mm. The fluctuations inside the main plasma column are found to change between different poloidal mode numbers as a function of time. Accordingly, the power spectra determined in these linear devices reflect the sum over these modes. Outside the main plasma column, avaloids are observed to remain attached to the main plasma, hence their behavior does not become independent of the dynamics inside the main plasma column. Avaloid properties, assessed from imaging, agree with Langmuir probes done on various devices, except that the radial length is found to be much larger than previously determined because the blob-shape assumption is not valid. The link between fluctuations inside and outside the main plasma column indicates that the nonlinear evolution of the m=1 poloidal mode number is responsible for the creation of avaloids.

  5. Influences and interactions of inundation, peat, and snow on active layer thickness

    NASA Astrophysics Data System (ADS)

    Atchley, Adam L.; Coon, Ethan T.; Painter, Scott L.; Harp, Dylan R.; Wilson, Cathy J.

    2016-05-01

    Active layer thickness (ALT), the uppermost layer of soil that thaws on an annual basis, is a direct control on the amount of organic carbon potentially available for decomposition and release to the atmosphere as carbon-rich Arctic permafrost soils thaw in a warming climate. We investigate how key site characteristics affect ALT using an integrated surface/subsurface permafrost thermal hydrology model. ALT is most sensitive to organic layer thickness followed by snow depth but is relatively insensitive to the amount of water on the landscape with other conditions held fixed. The weak ALT sensitivity to subsurface saturation suggests that changes in Arctic landscape hydrology may only have a minor effect on future ALT. However, surface inundation amplifies the sensitivities to the other parameters and under large snowpacks can trigger the formation of near-surface taliks.

  6. Influences and interactions of inundation, peat, and snow on active layer thickness

    DOE PAGES

    Atchley, Adam L.; Coon, Ethan T.; Painter, Scott L.; Harp, Dylan R.; Wilson, Cathy J.

    2016-05-18

    The effect of three environmental conditions: 1) thickness of organic soil, 2) snow depth, and 3) soil moisture content or water table height above and below the soil surface, on active layer thickness (ALT) are investigated using an ensemble of 1D thermal hydrology models. Sensitivity analyses of the ensemble exposed the isolated influence of each environmental condition on ALT and their multivariate interactions. The primary and interactive influences are illustrated in the form of color maps of ALT change. Results show that organic layer acts as a strong insulator, and its thickness is the dominant control of ALT, but themore » strength of the effect of organic layer thickness is dependent on the saturation state. Snow depth, subsurface saturation, and ponded water depth are strongly codependent and positively correlated to ALT.« less

  7. Realizing the full potential of Remotely Sensed Active Layer Thickness (ReSALT) Products

    NASA Astrophysics Data System (ADS)

    Schaefer, K. M.; Chen, A.; Liu, L.; Parsekian, A.; Jafarov, E. E.; Panda, S. K.; Zebker, H. A.

    2015-12-01

    The Remotely Sensed Active Layer Thickness (ReSALT) product uses the Interferometric Synthetic Aperture Radar (InSAR) technique to measure ground subsidence, active layer thickness (ALT), and thermokarst activity in permafrost regions. ReSALT supports research for the Arctic-Boreal Vulnerability Experiment (ABoVE) field campaign in Alaska and northwest Canada and is a precursor for a potential Nasa-Isro Synthetic Aperture Radar (NISAR) product. ALT is a critical parameter for monitoring the status of permafrost and thermokarst activity is one of the key drivers of change in permafrost regions. The ReSALT product currently includes 1) long-term subsidence trends resulting from the melting and subsequent drainage of excess ground ice in permafrost-affected soils, 2) seasonal subsidence resulting from the expansion of soil water into ice as the active layer freezes and thaws, and 3) ALT estimated from the seasonal subsidence assuming a vertical profile of water within the soil column. ReSALT includes uncertainties for all parameters and is validated against in situ measurements from the Circumpolar Active Layer Monitoring (CALM) network, Ground Penetrating Radar and mechanical probe measurements. We present high resolution ReSALT products on the North Slope of Alaska: Prudhoe Bay, Barrow, Toolik Lake, Happy Valley, and the Anaktuvuk fire zone. We believe that the ReSALT product could be expanded to include maps of individual thermokarst features identified as spatial anomalies in the subsidence trends, with quantified expansion rates. We illustrate the technique with multiple examples of thermokarst features on the North Slope of Alaska. Knowing the locations and expansion rates for individual features allows us to evaluate risks to human infrastructure. Our results highlight the untapped potential of the InSAR technique to remotely sense ALT and thermokarst dynamics over large areas of the Arctic.

  8. Coherent phonon optics in a chip with an electrically controlled active device.

    PubMed

    Poyser, Caroline L; Akimov, Andrey V; Campion, Richard P; Kent, Anthony J

    2015-02-05

    Phonon optics concerns operations with high-frequency acoustic waves in solid media in a similar way to how traditional optics operates with the light beams (i.e. photons). Phonon optics experiments with coherent terahertz and sub-terahertz phonons promise a revolution in various technical applications related to high-frequency acoustics, imaging, and heat transport. Previously, phonon optics used passive methods for manipulations with propagating phonon beams that did not enable their external control. Here we fabricate a phononic chip, which includes a generator of coherent monochromatic phonons with frequency 378 GHz, a sensitive coherent phonon detector, and an active layer: a doped semiconductor superlattice, with electrical contacts, inserted into the phonon propagation path. In the experiments, we demonstrate the modulation of the coherent phonon flux by an external electrical bias applied to the active layer. Phonon optics using external control broadens the spectrum of prospective applications of phononics on the nanometer scale.

  9. Coherent phonon optics in a chip with an electrically controlled active device

    PubMed Central

    Poyser, Caroline L.; Akimov, Andrey V.; Campion, Richard P.; Kent, Anthony J.

    2015-01-01

    Phonon optics concerns operations with high-frequency acoustic waves in solid media in a similar way to how traditional optics operates with the light beams (i.e. photons). Phonon optics experiments with coherent terahertz and sub-terahertz phonons promise a revolution in various technical applications related to high-frequency acoustics, imaging, and heat transport. Previously, phonon optics used passive methods for manipulations with propagating phonon beams that did not enable their external control. Here we fabricate a phononic chip, which includes a generator of coherent monochromatic phonons with frequency 378 GHz, a sensitive coherent phonon detector, and an active layer: a doped semiconductor superlattice, with electrical contacts, inserted into the phonon propagation path. In the experiments, we demonstrate the modulation of the coherent phonon flux by an external electrical bias applied to the active layer. Phonon optics using external control broadens the spectrum of prospective applications of phononics on the nanometer scale. PMID:25652241

  10. Coherent phonon optics in a chip with an electrically controlled active device.

    PubMed

    Poyser, Caroline L; Akimov, Andrey V; Campion, Richard P; Kent, Anthony J

    2015-01-01

    Phonon optics concerns operations with high-frequency acoustic waves in solid media in a similar way to how traditional optics operates with the light beams (i.e. photons). Phonon optics experiments with coherent terahertz and sub-terahertz phonons promise a revolution in various technical applications related to high-frequency acoustics, imaging, and heat transport. Previously, phonon optics used passive methods for manipulations with propagating phonon beams that did not enable their external control. Here we fabricate a phononic chip, which includes a generator of coherent monochromatic phonons with frequency 378 GHz, a sensitive coherent phonon detector, and an active layer: a doped semiconductor superlattice, with electrical contacts, inserted into the phonon propagation path. In the experiments, we demonstrate the modulation of the coherent phonon flux by an external electrical bias applied to the active layer. Phonon optics using external control broadens the spectrum of prospective applications of phononics on the nanometer scale. PMID:25652241

  11. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

    PubMed

    Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

    2015-03-11

    The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms. PMID:25639492

  12. Use of a Far-Infrared Active Warming Device in Guinea Pigs (Cavia porcellus)

    PubMed Central

    Zarndt, Bethany S; Buchta, Jessica N; Garver, Lindsey S; Davidson, Silas A; Rowton, Edgar D; Despain, Kenneth E

    2015-01-01

    Small mammals have difficulty maintaining body temperature under anesthesia. This hypothermia is a potential detriment not only to the health and comfort of the animal but also to the integrity of any treatment given or data gathered during the anesthetic period. Using an external warming device to assist with temperature regulation can mitigate these effects. In this study, we investigated the ability of an advanced warming device that uses far-infrared (FIR) heating and responds to real-time core temperature monitoring to maintain a normothermic core temperature in guinea pigs. Body temperatures were measured during 30 min of ketamine–xylazine general anesthesia with and without application of the heating device. The loss of core body heat from anesthetized guinea pigs under typical (unwarmed) conditions was significant, and this loss was almost completely mitigated by application of the FIR heating pad. The significant difference between the temperatures of the actively warmed guinea pigs as compared with the control group began as early as 14 min after anesthetic administration, leading to a 2.6 °C difference at 30 min. Loss of core body temperature was not correlated with animals’ body weight; however, weight influences the efficiency of FIR warming slightly. These study results show that the FIR heating device accurately controls core body temperature in guinea pigs, therefore potentially alleviating the effects of body heat loss on animal physiology. PMID:26632788

  13. Use of a Far-Infrared Active Warming Device in Guinea Pigs (Cavia porcellus).

    PubMed

    Zarndt, Bethany S; Buchta, Jessica N; Garver, Lindsey S; Davidson, Silas A; Rowton, Edgar D; Despain, Kenneth E

    2015-11-01

    Small mammals have difficulty maintaining body temperature under anesthesia. This hypothermia is a potential detriment not only to the health and comfort of the animal but also to the integrity of any treatment given or data gathered during the anesthetic period. Using an external warming device to assist with temperature regulation can mitigate these effects. In this study, we investigated the ability of an advanced warming device that uses far-infrared (FIR) heating and responds to real-time core temperature monitoring to maintain a normothermic core temperature in guinea pigs. Body temperatures were measured during 30 min of ketamine-xylazine general anesthesia with and without application of the heating device. The loss of core body heat from anesthetized guinea pigs under typical (unwarmed) conditions was significant, and this loss was almost completely mitigated by application of the FIR heating pad. The significant difference between the temperatures of the actively warmed guinea pigs as compared with the control group began as early as 14 min after anesthetic administration, leading to a 2.6 °C difference at 30 min. Loss of core body temperature was not correlated with animals' body weight; however, weight influences the efficiency of FIR warming slightly. These study results show that the FIR heating device accurately controls core body temperature in guinea pigs, therefore potentially alleviating the effects of body heat loss on animal physiology. PMID:26632788

  14. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    2000-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  15. Memory device using movement of protons

    DOEpatents

    Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

    1998-11-03

    An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

  16. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    1998-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  17. Active Flash: Performance-Energy Tradeoffs for Out-of-Core Processing on Non-Volatile Memory Devices

    SciTech Connect

    Boboila, Simona; Kim, Youngjae; Vazhkudai, Sudharshan S; Desnoyers, Peter; Shipman, Galen M

    2012-01-01

    In this abstract, we study the performance and energy tradeoffs involved in migrating data analysis into the flash device, a process we refer to as Active Flash. The Active Flash paradigm is similar to 'active disks', which has received considerable attention. Active Flash allows us to move processing closer to data, thereby minimizing data movement costs and reducing power consumption. It enables true out-of-core computation. The conventional definition of out-of-core solvers refers to an approach to process data that is too large to fit in the main memory and, consequently, requires access to disk. However, in Active Flash, processing outside the host CPU literally frees the core and achieves real 'out-of-core' analysis. Moving analysis to data has long been desirable, not just at this level, but at all levels of the system hierarchy. However, this requires a detailed study on the tradeoffs involved in achieving analysis turnaround under an acceptable energy envelope. To this end, we first need to evaluate if there is enough computing power on the flash device to warrant such an exploration. Flash processors require decent computing power to run the internal logic pertaining to the Flash Translation Layer (FTL), which is responsible for operations such as address translation, garbage collection (GC) and wear-leveling. Modern SSDs are composed of multiple packages and several flash chips within a package. The packages are connected using multiple I/O channels to offer high I/O bandwidth. SSD computing power is also expected to be high enough to exploit such inherent internal parallelism within the drive to increase the bandwidth and to handle fast I/O requests. More recently, SSD devices are being equipped with powerful processing units and are even embedded with multicore CPUs (e.g. ARM Cortex-A9 embedded processor is advertised to reach 2GHz frequency and deliver 5000 DMIPS; OCZ RevoDrive X2 SSD has 4 SandForce controllers, each with 780MHz max frequency

  18. Air-coupled piezoelectric transducers with active polypropylene foam matching layers.

    PubMed

    Gómez Alvarez-Arenas, Tomás E

    2013-05-10

    This work presents the design, construction and characterization of air-coupled piezoelectric transducers using 1-3 connectivity piezocomposite disks with a stack of matching layers being the outer one an active quarter wavelength layer made of polypropylene foam ferroelectret film. This kind of material has shown a stable piezoelectric response together with a very low acoustic impedance (<0.1 MRayl). These features make them a suitable candidate for the dual use or function proposed here: impedance matching layer and active material for air-coupled transduction. The transducer centre frequency is determined by the l/4 resonance of the polypropylene foam ferroelectret film (0.35 MHz), then, the rest of the transducer components (piezocomposite disk and passive intermediate matching layers) are all tuned to this frequency. The transducer has been tested in several working modes including pulse-echo and pitch-catch as well as wide and narrow band excitation. The performance of the proposed novel transducer is compared with that of a conventional air-coupled transducers operating in a similar frequency range.

  19. Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; Ovchinnikova, Olga S.; Haglund, Amanda V.; Dai, Sheng; Ward, Thomas Zac; Mandrus, David; Rack, Philip D.

    2016-02-09

    To begin this abstract, amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field-induced oxygen migration across the ionic liquid-semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistormore » can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. Finally, this study demonstrates the potential of field-induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.« less

  20. Activation of Extrasynaptic NMDARs at Individual Parallel Fiber–Molecular Layer Interneuron Synapses in Cerebellum

    PubMed Central

    Nahir, Ben

    2013-01-01

    NMDA receptors (NMDARs) expressed by cerebellar molecular layer interneurons (MLIs) are not activated by single exocytotic events but can respond to glutamate spillover following coactivation of adjacent parallel fibers (PFs), indicating that NMDARs are perisynaptic. Several types of synaptic plasticity rely on these receptors but whether they are activated at isolated synapses is not known. Using a combination of electrophysiological and optical recording techniques in acute slices of rat cerebellum, along with modeling, we find that repetitive activation of single PF–MLI synapses can activate NMDARs in MLIs. High-frequency stimulation, multivesicular release (MVR), or asynchronous release can each activate NMDARs. Frequency facilitation was found at all PF–MLI synapses but, while some showed robust MVR with increased release probability, most were limited to univesicular release. Together, these results reveal a functional diversity of PF synapses, which use different mechanisms to activate NMDARs. PMID:24107963