active dielectric microstructures: Topics by Science.gov

Sample records for active dielectric microstructures

Effects of synthesis techniques on chemical composition, microstructure and dielectric properties of Mg-doped calcium titanate

NASA Astrophysics Data System (ADS)

Jongprateep, Oratai; Sato, Nicha

2018-04-01

Calcium titanate (CaTiO3) has been recognized as a material for fabrication of dielectric components, owing to its moderate dielectric constant and excellent microwave response. Enhancement of dielectric properties of the material can be achieved through doping, compositional and microstructural control. This study, therefore, aimed at investigating effects of powder synthesis techniques on compositions, microstructure, and dielectric properties of Mg-doped CaTiO3. Solution combustion and solid-state reaction were powder synthesis techniques employed in preparation of undoped CaTiO3 and CaTiO3 doped with 5-20 at% Mg. Compositional analysis revealed that powder synthesis techniques did not exhibit a significant effect on formation of secondary phases. When Mg concentration did not exceed 5 at%, the powders prepared by both techniques contained only a single phase. An increase of MgO secondary phase was observed as Mg concentrations increased from 10 to 20 at%. Experimental results, on the contrary, revealed that powder synthesis techniques contributed to significant differences in microstructure. Solution combustion technique produced powders with finer particle sizes, which consequently led to finer grain sizes and density enhancement. High-density specimens with fine microstructure generally exhibit improved dielectric properties. Dielectric measurements revealed that dielectric constants of all samples ranged between 231 and 327 at 1 MHz, and that superior dielectric constants were observed in samples prepared by the solution combustion technique.
Observation of 690 MV m -1 Electron Accelerating Gradient with a Laser-Driven Dielectric Microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wootton, K. P.; Wu, Z.; Cowan, B. M.

Acceleration of electrons using laser-driven dielectric microstructures is a promising technology for the miniaturization of particle accelerators. In this work, experimental results are presented of relativistic electron acceleration with 690±100 MVm -1 gradient. This is a record-high accelerating gradient for a dielectric microstructure accelerator, nearly doubling the previous record gradient. To reach higher acceleration gradients the present experiment employs 90 fs duration laser pulses.
Demonstration of acceleration of relativistic electrons at a dielectric microstructure using femtosecond laser pulses

DOE PAGES

Wootton, Kent P.; Wu, Ziran; Cowan, Benjamin M.; ...

2016-06-02

Acceleration of electrons using laser-driven dielectric microstructures is a promising technology for the miniaturization of particle accelerators. Achieving the desired GV m –1 accelerating gradients is possible only with laser pulse durations shorter than ~1 ps. In this Letter, we present, to the best of our knowledge, the first demonstration of acceleration of relativistic electrons at a dielectric microstructure driven by femtosecond duration laser pulses. Furthermore, using this technique, an electron accelerating gradient of 690±100 MV m –1 was measured—a record for dielectric laser accelerators.
Influence of nanogold additives on phase formation, microstructure and dielectric properties of perovskite BaTiO3 ceramics

NASA Astrophysics Data System (ADS)

Nonkumwong, Jeeranan; Ananta, Supon; Srisombat, Laongnuan

2015-06-01

The formation of perovskite phase, microstructure and dielectric properties of nanogold-modified barium titanate (BaTiO3) ceramics was examined as a function of gold nanoparticle contents by employing a combination of X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, Archimedes principle and dielectric measurement techniques. These ceramics were fabricated from a simple mixed-oxide method. The amount of gold nanoparticles was found to be one of the key factors controlling densification, grain growth and dielectric response in BaTiO3 ceramics. It was found that under suitable amount of nanogold addition (4 mol%), highly dense perovskite BaTiO3 ceramics with homogeneous microstructures of refined grains (~0.5-3.1 μm) and excellence dielectric properties can be produced.
Dielectric Characteristics of Microstructural Changes and Property Evolution in Engineered Materials

NASA Astrophysics Data System (ADS)

Clifford, Jallisa Janet

Heterogeneous materials are increasingly used in a wide range of applications such as aerospace, civil infrastructure, fuel cells and many others. The ability to take properties from two or more materials to create a material with properties engineered to needs is always very attractive. Hence heterogeneous materials are evolving into more complex formulations in multiple disciplines. Design of microstructure at multiple scales control the global functional properties of these materials and their structures. However, local microstructural changes do not directly cause a proportional change to the global properties (such as strength and stiffness). Instead, local changes follow an evolution process including significant interactions. Therefore, in order to understand property evolution of engineered materials, microstructural changes need to be effectively captured. Characterizing these changes and representing them by material variables will enable us to further improve our material level understanding. In this work, we will demonstrate how microstructural features of heterogeneous materials can be described quantitatively using broadband dielectric spectroscopy (BbDS). The frequency dependent dielectric properties can capture the change in material microstructure and represent these changes in terms of material variables, such as complex permittivity. These changes in terms of material properties can then be linked to a number of different conditions, such as increasing damage due to impact or fatigue. Two different broadband dielectric spectroscopy scanning modes are presented: bulk measurements and continuous scanning to measure dielectric property change as a function of position across the specimen. In this study, we will focus on ceramic materials and fiber reinforced polymer matrix composites as test bed material systems. In the first part of the thesis, we will present how different micro-structural design of porous ceramic materials can be captured quantitatively using BbDS. These materials are typically used in solid oxide fuel cells (SOFC). Results show significant effect of microstructural design on material properties at multiple temperatures (up to 800 °C). In the later part of the thesis, we will focus on microstructural changes of fiber reinforced composite materials due to impact and static loading. The changes in dielectric response can then be linked to the bulk mechanical properties of the material and various damage modes. Observing trends in dielectric response enables us to further determine local mechanisms and distribution of properties throughout the damaged specimens. A 3D X-ray microscope and a digital microscope have been used to visualize these changes in material microstructure and validate experimental observations. The increase in damage observed in the material microstructure can then also be linked to the changes in dielectric response. Results show that BbDS is an extremely useful tool for identifying microstructural changes within a heterogeneous material and particularly useful in relating remaining properties. Dielectric material variables can be used directly in property degradation laws and help develop a framework for future predictive modeling methodologies.
Simultaneous Noncontact Precision Imaging of Microstructural and Thickness Variation in Dielectric Materials Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Donald J (Inventor)

2011-01-01

A process for simultaneously measuring the velocity of terahertz electromagnetic radiation in a dielectric material sample without prior knowledge of the thickness of the sample and for measuring the thickness of a material sample using terahertz electromagnetic radiation in a material sample without prior knowledge of the velocity of the terahertz electromagnetic radiation in the sample is disclosed and claimed. The process evaluates, in a plurality of locations, the sample for microstructural variations and for thickness variations and maps the microstructural and thickness variations by location. A thin sheet of dielectric material may be used on top of the sample to create a dielectric mismatch. The approximate focal point of the radiation source (transceiver) is initially determined for good measurements.
Simultaneous Noncontact Precision Imaging of Microstructural and Thickness Variation in Dielectric Materials Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Don J.; Seebo, Jeffrey P.; Winfree, William P.

2008-01-01

This article describes a noncontact single-sided terahertz electromagnetic measurement and imaging method that simultaneously characterizes microstructural (egs. spatially-lateral density) and thickness variation in dielectric (insulating) materials. The method was demonstrated for two materials-Space Shuttle External Tank sprayed-on foam insulation and a silicon nitride ceramic. It is believed that this method can be used as an inspection method for current and future NASA thermal protection system and other dielectric material inspection applications, where microstructural and thickness variation require precision mapping. Scale-up to more complex shapes such as cylindrical structures and structures with beveled regions would appear to be feasible.
Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites.

PubMed

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D; Hill, Curtis W; Brewer, Jeffrey C; Tucker, Dennis S; Cheng, Z-Y

2016-10-21

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu 3 Ti 4 O 12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10 -1 ). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.
Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

NASA Astrophysics Data System (ADS)

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-10-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced-up to about 10 times - by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10-1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing.
Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

PubMed Central

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-01-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184
Controlling Crystal Microstructure to Minimize Loss in Polymer Dielectrics

NASA Astrophysics Data System (ADS)

Miranda, Daniel; Iacob, Ciprian; Zhang, Shihai; Runt, James

Polymer dielectric films are of great importance for high performance capacitors. For these films it is critical to reduce dielectric loss, as it diminishes efficiency and contributes to waste heat generation during device operation. Here, a model semi-crystalline polymer, poly(ethylene naphthalate) (PEN), was used to examine how morphological factors inhibit chain relaxations responsible for loss. This was achieved by manipulating the extent of crystallization and the crystalline microstructure through a combination of annealing and uniaxial drawing, and investigating their effects on dielectric performance. Varying crystallization conditions influenced the dynamic Tg and extent of rigid amorphous fraction formation, but had a limited effect on loss magnitude. Film orientation however greatly reduced loss, through strain-induced crystallization and development of oriented amorphous mesophasic regions. Post-drawing annealing conditions were capable of further refining the crystal microstructure and, in turn, the dielectric properties. These findings demonstrate that semi-crystalline polymer morphology has a very strong influence on amorphous chain relaxations, and understanding how processing conditions affect morphology is critical to the rational design of polymer dielectrics. Office of Naval Research.
Dielectric Properties of Tungsten Copper Barium Ceramic as Promising Colossal-Permittivity Material

NASA Astrophysics Data System (ADS)

Wang, Juanjuan; Chao, Xiaolian; Li, Guangzhao; Feng, Lajun; Zhao, Kang; Ning, Tiantian

2017-08-01

Ba(Cu0.5W0.5)O3 (BCW) ceramic has been fabricated and its dielectric properties investigated for use in energy-storage applications, revealing a very large dielectric constant (˜104) at 1 kHz. Moreover, the colossal-permittivity BCW ceramic exhibited fine microstructure and optimal temperature stability over a wide temperature range from room temperature to 500°C. The internal barrier layer capacitor mechanism was considered to be responsible for its high dielectric properties. Based on activation values, it is concluded that doubly ionized oxygen vacancies make a substantial contribution to the conduction and relaxation behaviors at grain boundaries. This study suggests that this kind of material has potential for use in high-density energy storage applications.
Effect of the addition of B{sub 2}O{sub 3} and BaO-B{sub 2}O{sub 3}-SiO{sub 2} glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shri Prakash, B.; Varma, K.B.R.

2007-06-15

The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics was investigated. Both single-component (B{sub 2}O{sub 3}) and multi-component (30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B{sub 2}O{sub 3} glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B{sub 2}O{sub 3} content resulted in its segregation at the grain boundaries associated with a reduction in themore » grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples. - Graphical abstract: Scanning electron micrograph of 30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS) glass-added CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic on sintering.« less
Dielectric properties and microstructures for various MLCCs coated with additives

NASA Astrophysics Data System (ADS)

Oh, Min Wook; Yeo, Dong Hun; Shin, Hyo Soon; Jeong, Dae Yong

2013-12-01

As electronic devices become smaller and have higher capacity, dielectric thin films are being used in the development of multilayer ceramic capacitors (MLCCs). Smaller BaTiO3 dielectric particles should be used to obtain the thickness of low dielectric layers. Further, MLCC properties are achieved through the uniform addition of various additives, but the existing method of adding nano additives has limitations. As such, this study evaluated the dielectric properties of BaTiO3 pellets after using the liquid coating method to add additives such as Dy, Mg, Mn, Cr, and Si to 150 nm BaTiO3 dielectric powder. Mn, Cr, and Si ions were each fixed at 0.1, 0.1, and 0.65 mol-%. Sintering was performed in a reducing atmosphere, and the microstructure and the dielectric properties were evaluated while varying Dy from 0.5 to 1.0 mol-% and Mg from 1.0 to 2.0 mol-%. Grain growth was observed for higher amounts of Dy, but were suppressed for higher amounts of Mg. With regards to changes in particle size, both the permittivity and the temperature coefficient of capacitance (TCC) increased with increasing particle size. The permittivity was highest for Si=0.65, Mn=0.1, Cr=0.1 Dy=0.75, and Mg=2.0 mol-%. These levels also satisfied the TCC properties of X7R. In the microstructure, the core-shell was the most developed.
Dielectric properties and microstructure of sintered BaTiO3 fabricated by using mixed 150-nm and 80-nm powders with various additives

NASA Astrophysics Data System (ADS)

Oh, Min Wook; Kang, Jae Won; Yeo, Dong Hun; Shin, Hyo Soon; Jeong, Dae Yong

2015-04-01

Recently, the use of small-sized BaTiO3 particles for ultra-thin MLCC research has increased as a method for minimizing the dielectric layer's thickness in thick film process. However, when particles smaller than 100 nm are used, the reduced particle size leads to a reduced dielectric constant. The use of nanoparticles, therefore, requires an increase in the amount of additive used due to the increase in the specific surface area, thus increasing the production cost. In this study, a novel method of coating 150-nm and 80-nm BaTiO3 powders with additives and mixing them together was employed, taking advantage of the effect obtained through the use of BaTiO3 particles smaller than 100 nm, to conveniently obtain the desired dielectric constant and thermal characteristics. Also, the microstructure and the dielectric properties were evaluated. The additives Dy, Mn, Mg, Si, and Cr were coated on a 150-nm powder, and the additives Dy, Mn, Mg, and Si were coated on 80-nm powder, followed by mixing at a ratio of 1:1. As a result, the microstructure revealed grain formation according to the liquid-phase additive Si; additionally, densification was well realized. However, non-reducibility was not obtained, and the material became a semiconductor. When the amount of added Mn in the 150-nm powder was increased to 0.2 and 0.3 mol%, insignificant changes in the microstructure were observed, and the bulk density after mixing was found to have increased drastically in comparison to that before mixing. Also, non-reducibility was obtained for certain conditions. The dielectric property was found to be consistent with the densification and the grain size. The mixed composition #1-0.3 had a dielectric constant over 2000, and the result somewhat satisfied the dielectric constant temperature dependency for X6S.
Reliability Evaluation of Base-Metal-Electrode (BME) Multilayer Ceramic Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Liu, David (Donghang)

2011-01-01

This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability space-level applications. The study is focused on the construction and microstructure of BME capacitors and their impacts on the capacitor life reliability. First, the examinations of the construction and microstructure of commercial-off-the-shelf (COTS) BME capacitors show great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and approximately 0.5 micrometers, which is much less than that of most PME capacitors. The primary reasons that a BME capacitor can be fabricated with more internal electrode layers and less dielectric layer thickness is that it has a fine-grained microstructure and does not shrink much during ceramic sintering. This results in the BME capacitors a very high volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT) and regular life testing as per MIL-PRF-123. Most BME capacitors were found to fail· with an early dielectric wearout, followed by a rapid wearout failure mode during the HALT test. When most of the early wearout failures were removed, BME capacitors exhibited a minimum mean time-to-failure of more than 10(exp 5) years. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically between 10 and 20. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. Since BME capacitors have a much smaller grain size than PME capacitors, it is reasonable to predict that BME capacitors with thinner dielectric layers may have an equivalent life expectancy to that of PME capacitors with thicker dielectric layers.
High-pressure endurable flexible tactile actuator based on microstructured dielectric elastomer

NASA Astrophysics Data System (ADS)

Pyo, Dongbum; Ryu, Semin; Kyung, Ki-Uk; Yun, Sungryul; Kwon, Dong-Soo

2018-02-01

We demonstrate a robust flexible tactile actuator that is capable of working under high external pressures. The tactile actuator is based on a pyramidal microstructured dielectric elastomer layer inducing variation in both mechanical and dielectric properties. The vibrational performance of the actuator can be modulated by changing the geometric parameter of the microstructures. We evaluated the performance of the actuator under high-pressure loads up to 25 kPa, which is over the typical range of pressure applied when humans touch or manipulate objects. Due to the benefit of nonlinearity of the pyramidal structure, the actuator could maintain high mechanical output under various external pressures in the frequency range of 100-200 Hz, which is the most sensitive to vibration acceleration for human finger pads. The responses are not only fast, reversible, and highly durable under consecutive cyclic operations, but also large enough to impart perceivable vibrations for haptic feedback on practical wearable device applications.
Effect of BiFeO3 doping on the structural, dielectric and electrical properties of CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Dai, Haiyang; Liu, Dewei; Chen, Jing; Xue, Renzhong; Li, Tao; Xiang, Huiwen; Chen, Zhenping; Liu, Haizeng

2015-04-01

(1 - x)CaCu3Ti4O12- xBiFeO3 ( x = 0, 0.003, 0.006, 0.010 and 0.015) ceramics have been fabricated by the solid-state reaction method. The effects of BiFeO3 (BFO) doping on the microstructure, dielectric and electrical properties of CaCu3Ti4O12 (CCTO) ceramics were investigated. It is found that BFO doping can affect the microstructure of the CCTO ceramics, and some properties of CCTO ceramics can hence be improved by BFO doping. The XRD and Raman results show that no phase transition has occurred in the doping content range, but BFO doping induces the crystal structure distortion. Analysis of microstructure indicates that the grain morphology varies significantly with increasing BFO content, and an appropriate amount of BFO can promote the grain growth. Impedance spectroscopy results show that the dielectric constant and loss of the BFO-doped CCTO samples are stable with frequency. The dielectric constant and nonohmic properties can be enhanced markedly in an appropriate doping content. The dielectric loss of all BFO-doped samples was lower than that of undoped CCTO sample in low frequencies. The related mechanism is also discussed in the paper.
Electrokinetic pump

DOEpatents

Hencken, Kenneth R.; Sartor, George B.

2004-08-03

An electrokinetic pump in which the porous dielectric medium of conventional electrokinetic pumps is replaced by a patterned microstructure. The patterned microstructure is fabricated by lithographic patterning and etching of a substrate and is formed by features arranged so as to create an array of microchannels. The microchannels have dimensions on the order of the pore spacing in a conventional porous dielectric medium. Embedded unitary electrodes are vapor deposited on either end of the channel structure to provide the electric field necessary for electroosmotic flow.
Oxygen flux and dielectric response study of Mixed Ionic-Electronic Conducting (MIEC) heterogeneous functional materials

NASA Astrophysics Data System (ADS)

Rabbi, Fazle

Dense mixed ionic-electronic conducting (MIEC) membranes consisting of ionic conductive perovskite-type and/or fluorite-type oxides and high electronic conductive spinel type oxides, at elevated temperature can play a useful role in a number of energy conversion related systems including the solid oxide fuel cell (SOFC), oxygen separation and permeation membranes, partial oxidization membrane reactors for natural gas processing, high temperature electrolysis cells, and others. This study will investigate the impact of different heterogeneous characteristics of dual phase ionic and electronic conductive oxygen separation membranes on their transport mechanisms, in an attempt to develop a foundation for the rational design of such membranes. The dielectric behavior of a material can be an indicator for MIEC performance and can be incorporated into computational models of MIEC membranes in order to optimize the composition, microstructure, and ultimately predict long term membrane performance. The dielectric behavior of the MIECs can also be an indicator of the transport mechanisms and the parameters they are dependent upon. For this study we chose a dual phase MIEC oxygen separation membrane consisting of an ionic conducting phase: gadolinium doped ceria-Ce0.8 Gd0.2O2 (GDC) and an electronic conductive phase: cobalt ferrite-CoFe2O4 (CFO). The membranes were fabricated from mixtures of Nano-powder of each of the phases for different volume percentages, sintered with various temperatures and sintering time to form systematic micro-structural variations, and characterized by structural analysis (XRD), and micro-structural analysis (SEM-EDS). Performance of the membranes was tested for variable partial pressures of oxygen across the membrane at temperatures from 850°C-1060°C using a Gas Chromatography (GC) system. Permeated oxygen did not directly correlate with change in percent mixture. An intermediate mixture 60%GDC-40%CFO had the highest flux compared to the 50%GDC-50%CFO and 80%GDC-20%CFO mixtures. Material characterization suggests the emergence of a third phase contributing to the behavior. Microstructural studies suggested changes in micro-structure of a given volume fraction for different sintering temperature and sintering time. Flux variation was observed for membranes with the same constituent volume fraction but different micro-structure indicating the effects of the micro-structure on the overall oxygen permeation. To correlate the experimental flux measurement with a standard Wagner's flux equation, different microstructural characteristics were studied to incorporate them into a modified Wagner's flux equation. In-situ broadband dielectric spectroscopy measurements over a temperature range of 850°C-1060°C and frequency range of (0.1Hz-1MHz) of the operating 60%GDC-40%CFO mixture oxygen separation membranes were measured using a NOVOCONTROL dielectric spectroscopy test system. Dielectric response of the operating membrane was studied to identify the charge transfer process in the membrane. A computational model to study the dielectric impedance response of different microstructure was developed using a COMSOL(TM) Multiphysics qasi-static electromagnetic module. This model was validated using model materials with regular geometric shapes. To measure impedance of real micro/nano-structures of the membrane material, domains required for the COMSOL calculation were obtained from actual micro/nano structures by using 3D scans from X-ray nano and micro tomography. Simpleware(TM) software was used to generate 3D domains from image slices obtained from the 3D x-ray scans. Initial voltage distributions on the original microstructure were obtained from the computational model. Similarly, development of a primary model for simulating ionic/electronic species flow inside of an MIEC was also begun. The possibility of using broadband dielectric spectroscopy methods to understand and anticipate the flux capabilities of MIECs to reduce the cost and time of development of such material systems was explored.

Terahertz Mapping of Microstructure and Thickness Variations

NASA Technical Reports Server (NTRS)

Roth, Donald J.; Seebo, Jeffrey P.; Winfree, William P.

2010-01-01

A noncontact method has been devised for mapping or imaging spatial variations in the thickness and microstructure of a layer of a dielectric material. The method involves (1) placement of the dielectric material on a metal substrate, (2) through-the-thickness pulse-echo measurements by use of electromagnetic waves in the terahertz frequency range with a raster scan in a plane parallel to the substrate surface that do not require coupling of any kind, and (3) appropriate processing of the digitized measurement data.
Synthesis, microstructure and dielectric properties of zirconium doped barium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rohtash; School of Physical Sciences, Jawaharlal Nehru University, New Delhi; Asokan, K.

2016-05-23

We report on synthesis, microstructural and relaxor ferroelectric properties of Zirconium(Zr) doped Barium Titanate (BT) samples with general formula Ba(Ti{sub 1-x}Zr{sub x})O{sub 3} (x=0.20, 0.35). These lead-free ceramics were prepared by solid state reaction route. The phase transition behavior and temperature dependent dielectric properties and composition dependent ferroelectric properties were investigated. XRD analysis at room temperature confirms phase purity of the samples. SEM observations revealed retarded grain growth with increasing Zr mole fraction. Dielectric properties of BZT ceramics is influenced significantly by small addition of Zr mole fraction. With increasing Zr mole fraction, dielectric constant decreases while FWHM and frequencymore » dispersion increases. Polarization vs electric field hysteresis measurements reveal ferroelectric relaxor phase at room temperature. The advantages of such substitution maneuvering towards optimizing ferroelectric properties of BaTiO{sub 3} are discussed.« less
Microstructure and texture dependence of the dielectric anomalies and dc conductivity of Bi3TiNbO9 ferroelectric ceramics

NASA Astrophysics Data System (ADS)

Moure, A.; Pardo, L.

2005-04-01

Ceramics of composition Bi3TiNbO9 (BTN) and perovskite-layered structure (Aurivillius type) [B. Aurivillius, Ark. Kemi 1, 463 (1949)] were processed by natural sintering and hot pressing from amorphous precursors. Precursors were obtained by mechanochemical activation of stoichiometric mixtures of oxides. These materials are in general interesting for their use as high-temperature piezoelectrics. Among them, BTN possesses the highest ferroparaelectric phase-transition temperature (>900°C). The transition temperature establishes the working limit of the ceramic and the electric properties, especially the dc conductivity, affect on its polarizability. In this work, dielectric studies of BTN ceramics with controlled texture and microstructure have been made at 1, 100KHz, and 1MHZ and in the temperature range from 200°C up to the ferroparaelectric transition temperature. Values of ɛ'˜250 at 200°C are achieved in ceramics hot pressed at temperatures as low as 700°C for 1h.
Microstructure and electrical properties of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, S. F.; Zhang, J. L.; Zheng, P.

2006-04-15

CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics are prepared by the conventional solid-state reaction method under various sintering temperatures from 1000 to 1120 deg. C at an interval of 10 deg. C. Microstructures and crystalline structures are examined by scanning electronic microscopy and x-ray diffraction, respectively. Dielectric properties and complex impedances are investigated within the frequency range of 40 Hz-110 MHz over the temperature region from room temperature to 350 deg. C. It has been disclosed that the microstructures can be categorized into three different types: type A (with the small but uniform grain sizes), type B (with the bimodal distributionmore » of grain sizes) and type C (with the large and uniform grain sizes), respectively. The largeness of low-frequency dielectric permittivity at room temperature is closely related to the microstructure. Ceramics with different types of microstructures show the diverse temperature-dependent behaviors of electrical properties. However, the existence of some common characteristics is also found among them. For all of the ceramics, a Debye-type relaxation emerges in the frequency range of 100 Hz-100 kHz at high measuring temperatures, which has the larger dielectric dispersion strength than the one known in the frequency range above 100 kHz. Thus, the high-temperature dielectric dispersion exhibits a large low-frequency response and two Debye-type relaxations. Furthermore, all of the ceramics show three semicircles in the complex impedance plane. These semicircles are considered to represent individually different electrical mechanisms, among which the one in the low-frequency range arises most probably from the contribution of the domain boundaries, and the other two are ascribed to the contributions of the domains and the grain boundaries, respectively.« less
Microstructural, optical and dielectric properties of La{sub 0.8}Ba{sub 0.2}FeO{sub 3} nanostructures synthesized by sol-gel combustion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ali, S. Asad, E-mail: asadsyyed@gmail.com; Naseem, Swaleha; Khan, Wasi

2015-06-24

Barium doped lanthanum ferrite (LaFeO{sub 3}) nanoparticles (NPs) were prepared by gel combustion method and calcinated at 700°C. Microstructural studies were carried by XRD and SEM techniques. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible technique. The energy band gap was calculated and obtained 3.01 eV. Dielectric properties characterized by LCR meter and have been observed appreciable changes. The observed behavior of the dielectric properties can be attributed on the basis of Koop’s theory based on Maxwell-Wagner two layer models in studied nanoparticles.
Processing Waveform-Based NDE

NASA Technical Reports Server (NTRS)

Roth, Donald J (Inventor)

2011-01-01

A computer implemented process for simultaneously measuring the velocity of terahertz electromagnetic radiation in a dielectric material sample without prior knowledge of the thickness of the sample and for measuring the thickness of a material sample using terahertz electromagnetic radiation in a material sample without prior knowledge of the velocity of the terahertz electromagnetic radiation in the sample is disclosed and claimed. Utilizing interactive software the process evaluates, in a plurality of locations, the sample for microstructural variations and for thickness variations and maps the microstructural and thickness variations by location. A thin sheet of dielectric material may be used on top of the sample to create a dielectric mismatch. The approximate focal point of the radiation source (transceiver) is initially determined for good measurements.
Method and Apparatus for Precisely Applying Large Planar Equi-Biaxial Strains to a Circular Membrane

DTIC Science & Technology

2013-04-01

potential future Army applications. Electronic properties, such as dielectric strength , capacitance, resistance, and inductance, vary significantly and... dielectric strength and resistance are primarily determined by inherent bulk material properties, including microstructure, while shifts in inductance...less and a nominal thickness up to ~1 mm. 15. SUBJECT TERMS large planar equi-biaxial strain, membrane, dielectric elastomers, electromechanical
A study of the microstructure and optical properties of thin lead-dielectric cermet films. Ph.D. Thesis - Va. Polytechnic Inst. and State Univ.

NASA Technical Reports Server (NTRS)

Owen, R. B.

1972-01-01

A transmission electron microscopy study involving direct and replicating techniques is directed to a definition of the microstructure of radio frequency-sputtered, thin lead-dielectric cermet films. Once defined, this microstructure is used to obtain theoretical film refractive indices. The Maxwell Garnett theory provides a basis for the theoretical results. Measurements of film transmission and reflectivity are used to obtain rough experimental values for film refractive indices by the Tekucheva method. More exact values are obtained via ellipsometry. The rough Tekucheva values are used to determine the range over which computer calculations interpreting the ellipsometric results must be made. This technique yields accurate values for the film refractive indices.
A comparative study of the properties of five-layered Aurivillius oxides A2Bi4Ti5O18 (A = Ba, Pb, and Sr) synthesized by different wet chemical routes

NASA Astrophysics Data System (ADS)

Dubey, Shivangi; Subohi, Oroosa; Kurchania, Rajnish

2018-07-01

This paper reports the detailed study of the effect of different wet chemical synthesis routes (solution combustion, co-precipitation, and sol-gel route) on the microstructure, phase formation, dielectric, electrical, and ferroelectric properties of five-layered Aurivillius oxides: A2Bi4Ti5O18 (A = Ba, Pb, and Sr). Different synthesis parameters like the precursors used, synthesis temperature, and reaction time affects the morphology of the ceramics. Microstructure in turn influences the dielectric and ferroelectric properties. It was observed that the sol-gel-synthesized ceramics possess higher dielectric constant and remanent polarization, low dielectric loss due to lower conductivity in these samples as a result of higher density in these compounds as compared to those synthesized by other wet chemical synthesis routes such as solution combustion route and co-precipitation technique. The XRD data are used for phase analysis and surface morphology is studied using SEM images. Dielectric and electrical properties are investigated as a function of frequency and temperature.
Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramics

NASA Astrophysics Data System (ADS)

Li, Jinglei; Li, Fei; Zhuang, Yongyong; Jin, Li; Wang, Linghang; Wei, Xiaoyong; Xu, Zhuo; Zhang, Shujun

2014-08-01

The (Nb + In) co-doped TiO2 ceramics recently attracted considerable attention due to their colossal dielectric permittivity (CP) (˜100,000) and low dielectric loss (˜0.05). In this research, the 0.5 mol. % In-only, 0.5 mol. % Nb-only, and 0.5-7 mol. % (Nb + In) co-doped TiO2 ceramics were synthesized by standard conventional solid-state reaction method. Microstructure studies showed that all samples were in pure rutile phase. The Nb and In ions were homogeneously distributed in the grain and grain boundary. Impedance spectroscopy and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The high conductivity of grain was associated with the reduction of Ti4+ ions to Ti3+ ions, while the migration of oxygen vacancy may account for the conductivity of grain boundary. The effects of annealing treatment and bias filed on electrical properties were investigated for co-doped TiO2 ceramics, where the electric behaviors of samples were found to be susceptible to the annealing treatment and bias field. The internal-barrier-layer-capacitance mechanism was used to explain the CP phenomenon, the effect of annealing treatment and nonlinear I-V behavior for co-doped rutile TiO2 ceramics. Compared with CaCu3Ti4O12 ceramics, the high activation energy of co-doped rutile TiO2 (3.05 eV for grain boundary) was thought to be responsible for the low dielectric loss.
Development of Dielectric Material with Ceramic Matrix Composite (CMC) Produced from Kaolinite and CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Wong Swee; Hassan, Jumiah; Hashim, Mansor

Ceramic matrix composites (CMC) combine reinforcing ceramic phases, CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) with a ceramic matrix, kaolinite to create materials with new and superior properties. 10% and 20% CCTO were prepared by using a conventional solid state reaction method. CMC samples were pre-sintered at 800 deg. C and sintered at 1000 deg. C. The dielectric properties of samples were measured using HP 4192A LF Impedance Analyzer. Microstructures of the samples were observed using an optical microscope. XRD was used to determine the crystalline structure of the samples. The AFM showed the morphology of the samples. The results showed thatmore » the dielectric constant and dielectric loss factor of both samples are frequency dependent. At 10 Hz, the dielectric constant is 10{sup 11} for both samples. The CMC samples were independent with temperature with low dielectric constant in the frequency range of 10{sup 4}-10{sup 6} Hz. Since the CMC samples consist of different amount of kaolinite, so each sample exhibit different defect mechanism. Different reaction may occur for different composition of material. The effects of processing conditions on the microstructure and electrical properties of CMC are also discussed.« less
Electromechanical properties of A-site (LiCe)-modified sodium bismuth titanate (Na0.5Bi4.5Ti4O15) piezoelectric ceramics at elevated temperature

NASA Astrophysics Data System (ADS)

Wang, Chun-Ming; Wang, Jin-Feng; Zhang, Shujun; Shrout, Thomas R.

2009-05-01

The Aurivillius-type bismuth layer-structured (NaBi)0.46(LiCe)0.04Bi4Ti4O15 (NBT-LiCe) piezoelectric ceramics were synthesized using conventional solid-state processing. Phase analysis was performed by x-ray diffraction and microstructural morphology was assessed by scanning electron microscopy. The dielectric, piezoelectric, ferroelectric, and electromechanical properties of NBT-LiCe ceramics were investigated. The piezoelectric activities were found to be significantly enhanced compared to NBT ceramics, which can be attributed to the lattice distortion and the presence of bismuth vacancies. The dielectric and electromechanical properties of NBT-LiCe ceramics at elevated temperature were investigated in detail. The excellent piezoelectric, dielectric, and electromechanical properties, coupled with high Curie temperature (Tc=660 °C), demonstrated that the NBT-LiCe ceramics are the promising candidates for high temperature applications.
Dielectric and magnetic studies of BaTi0.5Fe0.5O3 ceramic materials, synthesized by solid state sintering.

PubMed

Samuvel, K; Ramachandran, K

2015-02-05

A comparative study of the surface morphology, dielectric and magnetic properties of the BaTi0.5Fe0.5O3 (BTFO) ceramics materials. This has been carried out by synthesizing the samples in different routes. BTFO samples have shown single phased 12R type hexagonal structure with R3m, P4mm space group. Interfacial effects on the dielectric properties of the samples have been understood by Cole-Cole plots in complex impedance and modulus formalism. It has been identified that huge dielectric constant (10(3)-10(6)) at lower frequencies is largely contributed by the heterogeneous electronic microstructure at the interfaces of grains. Modulus formalism has identified the effects of both grain and grain boundary microstructure on the dielectric properties, particularly in chemical routed samples. The order of grain boundary resistivity suggests the semiconductor/insulator class of the material. The grain boundary resistivity of the mechanical alloyed samples is remarkably lower than the solid state and chemical routed samples. Few samples have of the samples have exhibited signature of ferromagnetism at the room temperature. Copyright © 2014 Elsevier B.V. All rights reserved.
Enhanced dielectric response of GeO{sub 2}-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaral, F.; School of Technology and Management of Oliveira do Hospital, Oliveira do Hospital, 3400-124 Oliveira; Rubinger, C. P. L.

2009-02-01

CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic samples were prepared by solid state conventional route using stoichiometric amounts of CuO, TiO{sub 2}, and CaCO{sub 3}. Afterward the material was doped with GeO{sub 2} with concentrations up to 6% by weight and sintered at 1050 deg. C for 12 h. The influence of doping on the microstructure, vibrational modes, and dielectric properties of the material was investigated by x-ray diffraction, scanning electron microscopy coupled with an energy dispersive spectrometer, and infrared and dielectric measurements between 100 Hz and 30 MHz. The materials presented huge dielectric response, which increases with doping level relative tomore » undoped CaCu{sub 3}Ti{sub 4}O{sub 12}. The main effect of doping on the microstructure is the segregation of Cu-rich phase in the ceramic grain boundaries. Cole-Cole modeling correlates well the effects of this segregation with the relaxation parameters obtained. The intrinsic phonon contributions for the dielectric response were obtained and discussed together with the structural evolution of the system.« less
Bottom electrodes dependence of microstructures and dielectric properties of compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Tianjin; Wang Jinzhao; Zhang Baishun

2008-03-04

Compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} (BST) thin films, with x decreasing from 0.3 to 0, were deposited on Pt/Ti/SiO{sub 2}/Si and Ru/SiO{sub 2}/Si substrates by radio frequency magnetron sputtering technology. The microstructure and dielectric properties of the graded BST thin films were investigated. It was found that the films on Ru electrode have better crystallization, and that RuO{sub 2} is present between the Ru bottom electrode and the graded BST thin films by X-ray diffraction and SEM analysis. Dielectric measurement reveals that the graded BST thin films deposited on Ru bottom electrode have higher dielectric constant and tunability. Themore » enhanced dielectric behavior is attributed to better crystallization as well as smaller space charge capacitance width and the formation of RuO{sub 2} that is more compatible with the BST films. The graded BST films on Ru electrode show higher leakage current due to lower barrier height and rougher surface of bottom electrode.« less
Effect of nanocomposite gate-dielectric properties on pentacene microstructure and field-effect transistor characteristics.

PubMed

Lee, Wen-Hsi; Wang, Chun-Chieh

2010-02-01

In this study, the effect of surface energy and roughness of the nanocomposite gate dielectric on pentacene morphology and electrical properties of pentacene OTFT are reported. Nanoparticles TiO2 were added in the polyimide matrix to form a nanocomposite which has a significantly different surface characteristic from polyimide, leading to a discrepancy in the structural properties of pentacene growth. A growth mode of pentacene deposited on the nanocomposite is proposed to explain successfully the effect of surface properties of nanocomposite gate dielectric such as surface energy and roughness on the pentacene morphology and electrical properties of OTFT. To obtain the lower surface energy and smoother surface of nanocomposite gate dielectric that is responsible for the desired crystalline, microstructure of pentacene and electrical properties of device, a bottom contact OTFT-pentacene deposited on the double-layer nanocomposite gate dielectric consisting of top smoothing layer of the neat polyimide and bottom layer of (PI+ nano-TiO2 particles) nanocomposite has been successfully demonstrated to exhibit very promising performance including high current on to off ratio of about 6 x 10(5), threshold voltage of -10 V and moderately high filed mobility of 0.15 cm2V(-1)s(-1).
Correlation of Microwave Dielectric Properties and Microstructure of Unpatterned Ferroelectric Thin Films

DTIC Science & Technology

2003-04-03

technique. Ba acetate, Sr acetate, and Ti isopropoxide were used as precursors to form BST. Acetic acid and 2-methoxyethanol were used as solvents and...resulting from the generation of oxygen vacancy can hop between different titanium ions and provide a mechanism for dielectric losses, 2+the
Synthesis and study of structural, microstructural and dielectric properties of Ce3+ doped Co-Ni ferrites for automotive applications

NASA Astrophysics Data System (ADS)

Srinivasamurthy, K. M.; Angadi, V. Jagadeesha; Kumar, P. Mohan; Nagaraj, B. S.; Deepthy, P. R.; Pasha, U. Mahaboob; Rudraswamy, B.

2018-05-01

Nano crystalline spinel ferrites of Co0.5Ni0.5CexFe2-xO4 (x=0.01, 0.015, 0.02, 0.025 and 0.03) was prepared by modified solution combustion method using a mixture of fuels for the first time. The influence of rare earth Ce3+ substitution at the Fe3+ site on the structural, microstructural and dielectric properties of Co0.5Ni0.5CexFe2-xO4 was investigated. The X-ray diffraction (XRD) studies confirmed the formation of monophasic nano crystalline samples without any secondary phases. The crystallite size decreases and density increases with the increases of Ce3+ contents. Surface morphology was studied through Scanning Electron Microscopy (SEM). Dielectric properties of these ferrites have been studied at room temperature using impedance analyzer in the frequency range up to 20 MHz. The effect of frequency and composition on dielectric constant (ɛ'), dielectric loss (tanδ) and ac conductivity (σac) have been discussed in terms of hopping of charge carriers (Fe2+↔Fe3+). The decrease in dielectric loss with frequency follows Debye's relaxation phenomena. Both the variation in tan loss and dielectric loss with frequency shows a similar. AC conductivity increases with the increases of frequency which directly proportional to concentration of Ce3+ ions follows Jonscher law. These Cerium doped Cobalt-nickel ferrites are very helpful for automotive applications.
Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

PubMed Central

Li, Jianping; Zhao, Mingxi; Liu, Yongsheng; Chai, Nan; Ye, Fang; Qin, Hailong; Cheng, Laifei; Zhang, Litong

2017-01-01

SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries. PMID:28773015
Microstructural, Optical and Dielectric Properties of Al-Incorporated SnO2 Nanoparticles

NASA Astrophysics Data System (ADS)

Ahmed, Ateeq; Tripathi, P.; Naseem Siddique, M.; Ali, Tinku

2017-08-01

In this work, Pure SnO2 and Al doped SnO2 nanoparticles with the composition Sn1-xAlxO2 (x = 0, and 0.05) have been successfully prepared using sol-gel technique. The effect of Al dopant on microstructural, optical and dielectric properties has been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Ultraviolet (UV-Visible) absorption spectroscopy andImpedance spectroscopy (LCR meter)respectively. The XRD patterns indicated tetragonal rutile structure with single phase without any detectable impurity for all samples and incorporation of Al ions into the SnO2 lattice. Crystalline size decreased with aluminum content. The results of SEM confirm nanoparticles size decreases with Al dopant. UV-Visible results showed that optical band also decreases when Al is doped into pure SnO2 lattice. Frequency dependent dielectric properties of pure and doped SnO2 nanoparticles have been also studied.

Effect of doping ions on the structural defect and the electrical behavior of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Renzhong; Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002; Zhao, Gaoyang, E-mail: zhaogy@xaut.edu.cn

Graphical abstract: The dielectric constant decreases with Ta doping, increases with Y doping and keeps almost constant with Zr doping compared with that of pure CCTO. - Highlights: • Y and Ta doping cause different defect types and concentration. • Defect influences the grain boundary mobility and results in different grain size. • Y doping increases the dielectric constant and decreases the nonlinear property. • Ta doping decreases the dielectric constant and enhances the nonlinear property. • Zr doped sample has nearly the defect type and dielectric properties as CaCu{sub 3}Ti{sub 4}O{sub 12}. - Abstract: The microstructure, dielectric and electricalmore » properties of CaCu{sub 3}Ti{sub 4−x}R{sub x}O{sub 12} (R = Y, Zr, Ta; x = 0 and 0.005) ceramics were investigated by XRD, Raman spectra, SEM and dielectric spectrum measurements. Positron annihilation measurements have been performed to investigate the influence of doping on the defects. The results show that all samples form a single crystalline phase. Y and Ta doping cause different defect types and increase the defect size and concentration, which influence the mobility of grain boundary and result in the different grain size. Y doping increases the dielectric constant and decreases the nonlinear property while Ta doping lead to an inverse result. Zr-doped sample has nearly the defect type, grain morphology and dielectric properties as pure CaCu{sub 3}Ti{sub 4}O{sub 12}. The effects of microstructure including the grain morphology and the vacancy defects on the mechanism of the dielectric and electric properties by doping are discussed.« less
Effect of Powder Characteristics on Microstructure and Properties in Alkoxide Prepared PZT Ceramics.

DTIC Science & Technology

1984-12-01

Effect of pH of precipitating solution on the pressed and fired densities (9500 C/ h) of PZT (+ 0.25 wt% V2o5 ). * Figure 12. Plot of dielectric...Lectures: a) Electronic Cermics/Dielectrics Properties, b) Glasses and Substrates in Electronics, c) Thick Film Hybrid Circuits; d) Nagnetic Ceramics
Microstructures and dielectric properties of CaCu3Ti4O12 ceramics via combustion method

NASA Astrophysics Data System (ADS)

Yuan, W. X.; Li, Z. J.

2012-01-01

CaCu3Ti4O12 (CCTO) powder was synthesized by the combustion method. The effect of sintering temperature was studied on dielectric properties of the prepared ceramic samples. They have the dielectric constant of ~31 000 and 80 000 for the grain size of 0.3 and 30-100 μm. It is unusual for CCTO with a grain size of 0.3 μm to have a dielectric constant of ~31 000. Their giant dielectric constant could be explained by a two-step internal-barrier-layer-capacitor model, associated with grain boundaries and domain boundaries. The existence of domain boundaries helped to explain the contradiction of the dielectric mechanisms between polycrystalline and single-crystal CCTO.
Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.
Improvement microstructural and damage characterization of ceramic composites Y{sub 2}O{sub 3} – V{sub 2}O{sub 5} with MgO nano particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Issa, T. T., E-mail: alazbrh@yahoo.com; Hasan, J. M.; Abdullah, E. T.

2016-04-21

Compacted samples of Y{sub 2}O{sub 3}-V{sub 2}O{sub 5} – MgO Nano – particles wt. % sintered at different sintering temperature (700, 900, 1100, 1300) ) C° for 2 hours under static air were investigated by x-ray diffraction and differential thermal analysis(DTA), to identify the phase present .Microstructure examination achieved by scanning electron microscopy .Sintered density and porosity were measured for all sintered samples .Compression was tested too and the Brake down voltage and dielectric strength were measure for all sintered samples .The clear improvement were noticed in both microstructure and damage characterization respectively after existing the MgO Nano-particles, by increasingmore » in about 30% in sintered density and 25% for the compressive strength .The improvement also noticed on both brake down voltage and dielectric strength.« less
Structural, optical and dielectric properties of graphene oxide

NASA Astrophysics Data System (ADS)

Bhargava, Richa; Khan, Shakeel

2018-05-01

The Modified Hummers method has been used to synthesize Graphene oxide nanoparticles. Microstructural analyses were carried out by X-ray diffraction and Fourier transform infrared spectroscopy. Optical properties were studied by UV-visible spectroscopy in the range of 200-700 nm. The energy band gap was calculated with the help of Tauc relation. The frequency dependence of dielectric constant and dielectric loss were studied over a range of the frequency 75Hz to 5MHz at room temperature. The dispersion in dielectric constant can be explained with the help of Maxwell-Wagner model in studied nanoparticles.
Effect of Thermochemical Synthetic Conditions on the Structure and Dielectric Properties of Ga1.9Fe0.1O3 Compounds.

PubMed

Roy, Swadipta; Ramana, C V

2018-02-05

We report on the tunable and controlled dielectric properties of iron (Fe)-doped gallium oxide (Ga 2 O 3 ; Ga 1.9 Fe 0.1 O 3 , referred to as GFO) inorganic compounds. The GFO materials were synthesized using a standard high-temperature, solid-state chemical reaction method by varying the thermochemical processing conditions, namely, different calcination and sintering environments. Structural characterization by X-ray diffraction revealed that GFO compounds crystallize in the β-Ga 2 O 3 phase. The Fe doping has induced slight lattice strain in GFO, which is evident in structural analysis. The effect of the sintering temperature (T sint ), which was varied in the range of 900-1200 °C, is significant, as revealed by electron microscopy analysis. T sint influences the grain size and microstructure evolution, which, in turn, influences the dielectric and electrical properties of GFO compounds. The energy-dispersive X-ray spectrometry and mapping data demonstrate the uniform distribution of the elemental composition over the microstructure. The temperature- and frequency-dependent dielectric measurements indicate the characteristic features that are specifically due to Fe doping in Ga 2 O 3 . The spreading factor and relaxation time, calculated using Cole-Cole plots, are in the ranges of 0.65-0.76 and 10 -4 s, respectively. The results demonstrate that densification and control over the microstructure and properties of GFO can be achieved by optimizing T sint .
Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

NASA Technical Reports Server (NTRS)

Liu, David (Donhang); Sampson, Michael J.

2011-01-01

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. The leakage current characterization and the failure analysis results suggest that most of these early avalanche failures are due to the extrinsic minor construction defects introduced during fabrication of BME capacitors. The concentration of the extrinsic defects must be reduced if the BME capacitors are considered for high reliability applications. There are two approaches that can reduce or prevent the occurrence of early failure in BME capacitors: (1) to reduce the defect concentration with improved processing control; (2) to prevent the use of BME capacitors under harsh external stress levels so that the extrinsic defects will never be triggered for a failure. In order to do so appropriate dielectric layer thickness must be determined for a given rated voltage.
Dielectric properties of magnetorheological elastomers with different microstructure

NASA Astrophysics Data System (ADS)

Moucka, R.; Sedlacik, M.; Cvek, M.

2018-03-01

Composite materials containing magnetic particles organised within the polymer matrix by the means of an external magnetic field during the curing process were prepared, and their dielectric properties were compared with their isotropic analogues of the same filler concentration but homogeneous spatial distribution. A substantial dielectric response observed for anisotropic systems in a form of relaxation processes was explained as charge transport via the mechanism of variable range hopping. The changes in registered relaxations' critical frequency and shape of dielectric spectra with the filler concentration were discussed in terms of decreasing anisotropy of the system. The knowledge of the dielectric response of studied systems is essential for their practical applications such as piezoresistive sensors or radio-absorbing materials.
Microwave dielectric properties of inorganic fullerene-like tungsten disulfide nanoparticles

NASA Astrophysics Data System (ADS)

Chang, Hong; Dimitrakis, Georgios; Xu, Fang; Yi, Chenbo; Kingman, Samuel; Zhu, Yanqiu

2013-01-01

The dielectric response of inorganic fullerene-like (IF) tungsten disulfide (WS2) nanoparticles prepared by a sulfidization reaction of WO3 nanoparticles has been investigated, against commercial platelet 2H-WS2 particles, using a cavity perturbation technique at microwave frequencies at temperatures ranging from 20 to 750 °C. The IF-WS2 nanoparticles showed both temperature and frequency dependent dielectric properties. The different dielectric behaviour between the IF-WS2 and 2H-WS2 can be attributed to the different conductivity and structure peculiar to the materials. The microstructure and thermal stability of the IF-WS2 and 2H-WS2 were thoroughly examined, to correlate with the resulting dielectric responses.
Relation between the microstructure and the electromagnetic properties of BaTiO3/Ni0.5Zn0.5Fe2O4 ceramic composite

NASA Astrophysics Data System (ADS)

Xiao, Bin; Tang, Yu; Ma, Guodong; Ma, Ning; Du, Piyi

2015-06-01

The microstructure-property relation in ferroelectric/ferromagnetic composite is investigated in detail, exemplified by typical sol-gel-derived 0.3BTO/0.7NZFO ceramic composite. The effect of microstructural factors including intergrain connectivity, grain size and interfaces on the dielectric and magnetic properties of the composite prepared by conventional ceramic method and three-step sintering method is discussed both experimentally and theoretically. It reveals that the dielectric behavior of the composite is controlled by a hybrid dielectric process that combines the contribution of Debye-like dipoles and Maxwell-Wagner (M-W or interfacial) polarization. Enhanced dielectric, magnetic and conductive behaviors appear in the composite with better intergrain connectivity and larger grain size derived by sol-gel route and three-step sintering method. The effective permittivity contributed by Debye-like dipoles exhibits a value of ~130,000 in three-step sintered composite, which is almost the same as that in conventionally sintered one, but that contributed by M-W response is much smaller in the former. Compared with conventionally prepared samples, the relaxation time ( τ) is 3.476 × 10-6 s, about one order of magnitude smaller, and the dc electrical conductivity is 3.890 × 10-3 S/m, one order of magnitude higher in three-step sintered composite. The minimum dielectric loss reveals almost the same (~0.2) for all samples, but shows distinguishable difference in low-frequency region. Meanwhile, an initial permeability of 84, twice as large as that of conventionally prepared composite and 56 % the value of single-phased NZFO ferrite (~150), and a saturation magnetization of 63.5 emu/g, 32 % higher than that of conventional one and approximately 84 % the value of single-phased NZFO ferrite (~76 emu/g), appear simultaneously in three-step sintered composite with larger grain size and better intergrain connectivity. It is clear that the discovery is helpful for establishing a more explicit view on the physics of multi-functional composite materials, while the composite with optimized microstructure is beneficial to be used as a high-performance material.
Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes.

PubMed

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R; Castillo, Gabriel R; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-08-07

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips.
Novel fabrication method for 3D microstructures using surface-activated bonding and its application to micro-mechanical parts

NASA Astrophysics Data System (ADS)

Yamada, Takayuki; Takahashi, Mutsuya; Ozawa, Takashi; Tawara, Satoshi; Goto, Takayuki

2002-11-01

The purpose of this work is to demonstrate that a novel fabrication method for 3-D microstructures (FORMULA) is applicable to fabrication of micro mechanical parts with a large flexibility. This method is a kind of layer manufacturing method of thin films for metallic or dielectric microstructures using surface-activated bonding (SAB). The bonding interfaces of thin films are investigated by transmission electron microscope (TEM). Voids were observed at the interfaces of both pure aluminum films and Al-Cu alloy films. The ratio of void on the Al-Cu/Al-Cu interface is much larger than that of Al/Al interface, although the films have the same surface roughness of 3nm in Ra (average roughness). And approximately 10nm-thick amorphous intermediate layers were found at the interfaces. Furthermore, we have fabricated a micro gear of 900μm in diameter and 200μm in height, which is about ten times as large as our previous test pieces. Overhung structures such as a bridge structure and a cantilever were also fabricated without supporting layers beneath them.
Influence of Yb{sub 2}O{sub 3} on electrical and microstructural characteristics of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Kai; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054; Luo, Yun

2015-09-15

Graphical abstract: Some Yb atoms entered in the lattice of CCTO substituted the Ca sites, the rest of Yb atoms concentrated at grain boundaries decreased the grain size. The dielectric constant was decreased by Yb doping. The dielectric loss of the CCTO could be greatly reduced at low frequency. - Highlights: • Yb atoms may take the place of Ca sites and concentrate at grain boundaries. • Tiny second phase corresponding to Yb may decrease the grain size. • Decrease of the grain size leads to the decrease of dielectric constant. • Yb doping could decrease the dielectric loss ofmore » CCTO. - Abstract: This paper focuses on the remarkable effects of Yb{sub 2}O{sub 3} doping on the microstructure and dielectric characteristics of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO). Samples were prepared by the solid phase reaction method and sintered in air at 1030 °C for 12 h. X-ray diffraction and X-ray photoelectron spectroscopy studies confirm that the primary phase is CCTO. Some Yb{sup 3+} ions may substitute into the Ca site at the center or zenith sites of the CCTO lattice hexahedron, while the rest of the Yb atoms may concentrate at grain boundaries. The grain size of Yb{sub 2}O{sub 3}-doped CCTO ceramics were examined by scanning electron microscopy and demonstrate sharp grain size reduction with Yb{sub 2}O{sub 3} doping. From dielectric property measurements, the Yb{sub 2}O{sub 3} doping reduces the dielectric constant of CCTO, and the dielectric loss is also reduced.« less
Processing effects on the microstructure and dielectric properties of hydrothermal barium titanate and (barium,strontium)titanate thin films

NASA Astrophysics Data System (ADS)

McCormick, Mark Alan

The goal of this work was to produce BaTiO3 and BaxSr (1-x)TiO3 (BST) thin films with high dielectric constants, using a low-temperature (<100°C) hydrothermal synthesis route. To accomplish this, titanium metal-organic precursor films were spin-cast onto metal-coated glass substrates and converted to polycrystalline BaTiO3 or BST upon reacting in aqueous solutions of Ba(OH)2 or Ba(OH)2 and Sr(OH)2. The influences of solution molarity, processing temperature, and reaction time on thin film reaction kinetics, microstructure, and dielectric properties were examined for BaTiO3 films. Post-deposition annealing at temperatures as low as 200°C substantially affected the lattice parameter, dielectric constant, and dielectric loss. This behavior is explained in terms of hydroxyl defect incorporation during film formation. Current-voltage (I-V) measurements were performed to determine the dominant conduction mechanism(s) during application of a do field, and to extract the metal/ceramic barrier height. In particular, Schottky barrier-limited conduction and Poole-Frenkel conduction were investigated as potential leakage mechanisms. For BST thin films, film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The dielectric constant of the BST films was measured as a function of composition (Ba:Sr ratio) and temperature over the range 25--150°C. Finally, capacitance-voltage (C-V) measurements were made for BST films to determine the influence of film composition on dielectric tunability.
Electromechanical properties of A-site (LiCe)-modified sodium bismuth titanate (Na{sub 0.5}Bi{sub 4.5}Ti{sub 4}O{sub 15}) piezoelectric ceramics at elevated temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Chunming; Wang Jinfeng; Zhang Shujun

2009-05-01

The Aurivillius-type bismuth layer-structured (NaBi){sub 0.46}(LiCe){sub 0.04}Bi{sub 4}Ti{sub 4}O{sub 15} (NBT-LiCe) piezoelectric ceramics were synthesized using conventional solid-state processing. Phase analysis was performed by x-ray diffraction and microstructural morphology was assessed by scanning electron microscopy. The dielectric, piezoelectric, ferroelectric, and electromechanical properties of NBT-LiCe ceramics were investigated. The piezoelectric activities were found to be significantly enhanced compared to NBT ceramics, which can be attributed to the lattice distortion and the presence of bismuth vacancies. The dielectric and electromechanical properties of NBT-LiCe ceramics at elevated temperature were investigated in detail. The excellent piezoelectric, dielectric, and electromechanical properties, coupled with high Curiemore » temperature (T{sub c}=660 deg. C), demonstrated that the NBT-LiCe ceramics are the promising candidates for high temperature applications.« less
Effects of oxygen deficiency on the transport and dielectric properties of NdSrNbO

NASA Astrophysics Data System (ADS)

Hzez, W.; Benali, A.; Rahmouni, H.; Dhahri, E.; Khirouni, K.; Costa, B. F. O.

2018-06-01

In the present study, Nd0.7Sr0.3NbO3-y (y = 0.1, 0.15, 0.2) compounds were prepared via a solid-solid reaction route. The prepared samples were characterized by electrochemical impedance spectroscopy in order to establish the effects of temperature, frequency, and oxygen vacancies on both the transport and dielectric properties of NdSrNbO. We found that both the electrical and dielectric properties were highly sensitive to the concentration of oxygen vacancies. The conduction mechanism data were explained well according to the Mott model and adiabatic small polaronic hopping model. Electrochemical impedance spectroscopy analysis showed that one relaxation process was present in the Nd0.7Sr0.3NbO2.9 system whereas two relaxation processes were observed in the Nd0.7Sr0.3NbO2.85 and Nd0.7Sr0.3NbO2.8 systems, where the latter behavior indicated the presence of many active regions (due to the contributions of different microstructures). The temperature and frequency dependences of the dielectric constant confirmed the contributions of different polarization mechanisms. In particular, the high dielectric constant values at low frequencies and high temperatures were mainly related to the presence of different Schottky barriers, whereas the low dielectric constant values at high frequencies were essentially related to the intrinsic effect. The constant dielectric values obtained for the samples are greater than those in the NdSrFeO system, which makes them interesting materials for use in applications that require high dielectric constants.
Influence of silane coupling agent on microstructure and properties of CCTO-P(VDF-CTFE) composites

NASA Astrophysics Data System (ADS)

Tong, Yang; Zhang, Lin; Bass, Patrick; Rolin, Terry D.; Cheng, Z.-Y.

Influence of the coupling agent on microstructure and dielectric properties of ceramic-polymer composites is systematically studied using CaCu3Ti4O12 (CCTO) as the filler, trichloro-(1H,1H,2H,2H-perfluorooctyl)-silane (Cl3-silane) as coupling agent, and P(VDF-CTFE) 88/12mol.% copolymer as the matrix. It is demonstrated that Cl3-silane molecules can be attached onto CCTO surface using a simple process. The experimental results show that coating CCTO with Cl3-silane can improve the microstructure uniformity of the composites due to the good wettability between Cl3-silane and P(VDF-CTFE), which also significantly improves the electric breakdown field of the composites. It is found that the composites using CCTO coated with 1.0wt.% Cl3-silane exhibit a higher dielectric constant with a higher electric breakdown field. For the composites with 15vol.% CCTO that is coated with 1.0wt.% Cl3-silane, an electric breakdown field of more than 240MV/m is obtained with an energy density of more than 4.5J/cm3. It is also experimentally found that the dielectric constant can be used to easily identify the optimized content of coupling agent.
Base-Metal Electrode-Multilayer Ceramic Capacitors: Past, Present and Future Perspectives

NASA Astrophysics Data System (ADS)

Kishi, Hiroshi; Mizuno, Youichi; Chazono, Hirokazu

2003-01-01

Multilayer ceramic capacitor (MLCC) production and sales figures are the highest among fine-ceramic products developed in the past 30 years. The total worldwide production and sales reached 550 billion pieces and 6 billion dollars, respectively in 2000. In the course of progress, the development of base-metal electrode (BME) technology played an important role in expanding the application area. In this review, the recent progress in MLCCs with BME nickel (Ni) electrodes is reviewed from the viewpoint of nonreducible dielectric materials. Using intermediate-ionic-size rare-earth ion (Dy2O3, Ho2O3, Er2O3, Y2O3) doped BaTiO3 (ABO3)-based dielectrics, highly reliable Ni-MLCCs with a very thin layer below 2 μm in thickness have been developed. The effect of site occupancy of rare-earth ions in BaTiO3 on the electrical properties and microstructure of nonreducible dielectrics is studied systematically. It appears that intermediate-ionic-size rare-earth ions occupy both A- and B-sites in the BaTiO3 lattice and effectively control the donor/acceptor dopant ratio and microstructural evolution. The relationship between the electrical properties and the microstructure of Ni-MLCCs is also presented.
Lightning arrestor connector lead magnesium niobate qualification pellet test procedures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuohig, W.; Mahoney, Patrick A.; Tuttle, Bruce Andrew

2009-02-01

Enhanced knowledge preservation for DOE DP technical component activities has recently received much attention. As part of this recent knowledge preservation effort, improved documentation of the sample preparation and electrical testing procedures for lead magnesium niobate--lead titanate (PMN/PT) qualification pellets was completed. The qualification pellets are fabricated from the same parent powders used to produce PMN/PT lightning arrestor connector (LAC) granules at HWF&T. In our report, the procedures for fired pellet surface preparation, electrode deposition, electrical testing and data recording are described. The dielectric measurements described in our report are an information only test. Technical reasons for selecting the electrodemore » material, electrode size and geometry are presented. The electrical testing is based on measuring the dielectric constant and dissipation factor of the pellet during cooling from 280 C to 220 C. The most important data are the temperature for which the peak dielectric constant occurs (Curie Point temperature) and the peak dielectric constant magnitude. We determined that the peak dielectric constant for our procedure would be that measured at 1 kHz at the Curie Point. Both the peak dielectric constant and the Curie point parameters provide semi-quantitative information concerning the chemical and microstructural homogeneity of the parent material used for the production of PMN/PT granules for LACs. Finally, we have proposed flag limits for the dielectric data for the pellets. Specifically, if the temperature of the peak dielectric constant falls outside the range of 250 C {+-} 30 C we propose that a flag limit be imposed that will initiate communication between production agency and design agency personnel. If the peak dielectric constant measured falls outside the range 25,000 {+-} 10,000 we also propose that a flag limit be imposed.« less

Properties of dielectric dead layers for SrTiO3 thin films on Pt electrodes

NASA Astrophysics Data System (ADS)

Finstrom, Nicholas H.; Cagnon, Joel; Stemmer, Susanne

2007-02-01

Dielectric measurements as a function of temperature were used to characterize the properties of the dielectric dead layers in parallel-plate capacitors with differently textured SrTiO3 thin films and Pt electrodes. The apparent thickness dependence of the permittivity was described with low-permittivity passive (dead) layers at the interfaces connected in series with the bulk of the SrTiO3 film. Interfacial capacitance densities changed with the film microstructure and were weakly temperature dependent. Estimates of the dielectric dead layer thickness and permittivity were limited by the film surface roughness (˜5nm ). The consequences for the possible origins of dielectric dead layers that have been proposed in the literature are discussed.
Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

PubMed Central

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-01-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications. PMID:27703253
Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

NASA Astrophysics Data System (ADS)

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.
Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates.

PubMed

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y B; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-05

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO 3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu 3 Ti 4 O 12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.
Dielectric Rheo-SANS: An Instrument for the Simultaneous Interrogation of Rheology, Microstructure and Electronic Properties of Complex Fluids

NASA Astrophysics Data System (ADS)

Wagner, Norman; Richards, Jeffrey; Hipp, Julie; Butler, Paul

In situ measurements are an increasingly important tool to inform the complex relationship between nanoscale properties and macroscopic measurements. For conducting colloidal suspensions, we seek intrinsic relationships between the measured electrical and mechanical response of a material both in quiescence and under applied shear. These relationships can be used to inform the development of new materials with enhanced electrical and mechanical performance. In order to study these relationships, we have developed a dielectric rheology instrument that is compatible with small angle neutron scattering (SANS) experiments. This Dielectric RheoSANS instrument consists of a Couette geometry mounted on an ARES G2 strain controlled rheometer enclosed in a modified Forced Convection Oven (FCO). In this talk, we outline the development of the Dielectric RheoSANS instruments and demonstrate its operation using two systems - a suspension of carbon black particles in propylene carbonate and poly(3-hexylthiophene) organogel - where there is interest in how shear influences the microstructure state of the material. By monitoring the conductivity and rheological response of these materials at the same time, we can capture the entire evolution of the material response to an applied deformation. NCNR NIST Cooperative Agreement #70NANB12H239.
Investigation of the Effect of Various Oxide and Fluoride Additives on the Microstructure, Electronic Properties, and Phase Shifting Ability of Ba(1-x) Sr(x)TiO3

DTIC Science & Technology

1993-09-01

AD-A271 756 ARMY RESEARCH LABORATORY Investigation of the Effect of Various Oxide and Flouride Additives on the Microstructure, Electronic Properties ...NUMBERS Investigation of the Effect of Various Oxide and Fluoride Additives on the Microstructure, Electronic Properties , and Phase Shifting Ability of...dielectric properties . tunability. hysteresis. and grain size have been investigated. The homogeneity of the doped materials has been verified using
Largely enhanced dielectric properties of carbon nanotubes/polyvinylidene fluoride binary nanocomposites by loading a few boron nitride nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Minhao; Zhao, Hang; He, Delong

2016-08-15

The ternary nanocomposites of boron nitride nanosheets (BNNSs)/carbon nanotubes (CNTs)/polyvinylidene fluoride (PVDF) are fabricated via a combination of solution casting and extrusion-injection processes. The effects of BNNSs on the electrical conductivity, dielectric behavior, and microstructure changes of CNTs/PVDF binary nanocomposites are systematically investigated. A low percolation value (f{sub c}) for the CNTs/PVDF binary system is obtained due to the integration of solution and melting blending procedures. Two kinds of CNTs/PVDF binary systems with various CNTs contents (f{sub CNTs}) as the matrix are discussed. The results reveal that compared with CNTs/PVDF binary systems at the same f{sub CNTs}, the ternary BNNSs/CNTs/PVDFmore » nanocomposites exhibit largely enhanced dielectric properties due to the improvement of the CNTs dispersion state and the conductive network. The dielectric constant of CNTs/PVDF binary nanocomposite with 6 vol. % CNTs (f{sub CNTs} < f{sub c}) shows a 79.59% enhancement from 49 to 88 after the incorporation of 3 vol. % BNNSs. For the other CNTs/PVDF system with 8 vol. % CNTs (f{sub CNTs} > f{sub c}), it displays a 43.32% improvement from 1325 to 1899 after the addition of 3 vol. % BNNSs. The presence of BNNSs facilitates the formation of the denser conductive network. Meanwhile, the ternary BNNSs/CNTs/PVDF systems exhibit a low dielectric loss. The adjustable dielectric properties could be obtained by employing the ternary systems due to the microstructure changes of nanocomposites.« less
Dielectric RheoSANS - Simultaneous Interrogation of Impedance, Rheology and Small Angle Neutron Scattering of Complex Fluids.

PubMed

Richards, Jeffrey J; Gagnon, Cedric V L; Krzywon, Jeffery R; Wagner, Norman J; Butler, Paul D

2017-04-10

A procedure for the operation of a new dielectric RheoSANS instrument capable of simultaneous interrogation of the electrical, mechanical and microstructural properties of complex fluids is presented. The instrument consists of a Couette geometry contained within a modified forced convection oven mounted on a commercial rheometer. This instrument is available for use on the small angle neutron scattering (SANS) beamlines at the National Institute of Standards and Technology (NIST) Center for Neutron Research (NCNR). The Couette geometry is machined to be transparent to neutrons and provides for measurement of the electrical properties and microstructural properties of a sample confined between titanium cylinders while the sample undergoes arbitrary deformation. Synchronization of these measurements is enabled through the use of a customizable program that monitors and controls the execution of predetermined experimental protocols. Described here is a protocol to perform a flow sweep experiment where the shear rate is logarithmically stepped from a maximum value to a minimum value holding at each step for a specified period of time while frequency dependent dielectric measurements are made. Representative results are shown from a sample consisting of a gel composed of carbon black aggregates dispersed in propylene carbonate. As the gel undergoes steady shear, the carbon black network is mechanically deformed, which causes an initial decrease in conductivity associated with the breaking of bonds comprising the carbon black network. However, at higher shear rates, the conductivity recovers associated with the onset of shear thickening. Overall, these results demonstrate the utility of the simultaneous measurement of the rheo-electro-microstructural properties of these suspensions using the dielectric RheoSANS geometry.
Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes

PubMed Central

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-01-01

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561
Effect of Repetition Rate on Femtosecond Laser-Induced Homogenous Microstructures

PubMed Central

Biswas, Sanchari; Karthikeyan, Adya; Kietzig, Anne-Marie

2016-01-01

We report on the effect of repetition rate on the formation and surface texture of the laser induced homogenous microstructures. Different microstructures were micromachined on copper (Cu) and titanium (Ti) using femtosecond pulses at 1 and 10 kHz. We studied the effect of the repetition rate on structure formation by comparing the threshold accumulated pulse (FΣpulse) values and the effect on the surface texture through lacunarity analysis. Machining both metals at low FΣpulse resulted in microstructures with higher lacunarity at 10 kHz compared to 1 kHz. On increasing FΣpulse, the microstructures showed higher lacunarity at 1 kHz. The effect of the repetition rate on the threshold FΣpulse values were, however, considerably different on the two metals. With an increase in repetition rate, we observed a decrease in the threshold FΣpulse on Cu, while on Ti we observed an increase. These differences were successfully allied to the respective material characteristics and the resulting melt dynamics. While machining Ti at 10 kHz, the melt layer induced by one laser pulse persists until the next pulse arrives, acting as a dielectric for the subsequent pulse, thereby increasing FΣpulse. However, on Cu, the melt layer quickly resolidifies and no such dielectric like phase is observed. Our study contributes to the current knowledge on the effect of the repetition rate as an irradiation parameter. PMID:28774143
Microstructure and Properties of KSr2Nb5O15 Ceramics with Excess K+

NASA Astrophysics Data System (ADS)

Wang, Min; Gao, Feng; Xu, Jie; Zhang, Chaochao; Qin, Mengjie; Wang, Li; Guo, Yiting

2017-03-01

KSr2Nb5O15- xK (KSN- xK, x = 0 mol.%, 4 mol.%, 8 mol.%, 12 mol.%, 16 mol.%, and 20 mol.%) lead-free ferroelectric ceramics have been prepared by a buried sintering method using needle-like KSN particles synthesized by molten salt synthesis, and their microstructure, dielectric properties, and infrared transmittance investigated. The results suggest that the KSN- xK ceramics had simplex tungsten bronze structure for x ≤ 12 mol.%, but K2Nb8O21 secondary phase appeared at higher x. Excess K+ compensated the shortage of A-site ions in KSN crystallites, alleviated lattice distortion, and drove the KSN component closer to stoichiometric ratio, all of which increased the Curie temperature. The dielectric relaxor behavior of the ceramics was enhanced as the excess K+ content was increased. The dielectric constant, dielectric tunability, and infrared transmittance initially increased then decreased with increasing x. The specimen with 12 mol.% excess K+ showed optimum electrical properties, including maximum infrared transmittance of ˜60%. This work confirms that A-site vacancies in KSN can be compensated by excess K+, and that this effect can be used to adjust the local composition, alleviate structural distortion of the oxygen octahedron, enhance the Curie temperature, etc.
Enhancement of Dielectric Breakdown Strength and Energy Conversion Efficiency of Niobate Glass-Ceramics by Sc2O3 Doping

NASA Astrophysics Data System (ADS)

Xiao, Shi; Xiu, Shaomei; Yang, Ke; Shen, Bo; Zhai, Jiwei

2018-01-01

Niobate glass-ceramics K2O-SrO-Nb2O5-B2O3-Al2O3-SiO2 (KSN-BAS) doped with different amounts of Sc2O3 have been prepared through a melt quenching/controlled crystallization method, and the influence of the Sc2O3 content on their phase composition, microstructure, dielectric performance, and charge-discharge properties investigated. X-ray powder diffraction results showed that the peak positions of the KSr2Nb5O15 phase shifted to higher angle and the glass-ceramic microstructures were significantly improved by Sc2O3 addition. Based on these results, 0.5 mol.% Sc2O3 doping was found to achieve remarkable enhancement in energy storage density, which reached 9.63 ± 0.39 J/cm3 at dielectric breakdown strength of 1450.38 ± 29.01 kV/cm with high conversion efficiency of ˜ 92.1%. For pulsed power applications, discharge speed of 17 ns and power density of 0.48 MW/cm3 were obtained in the glass-ceramic with 0.5 mol.% Sc2O3. These results could provide a new design strategy for high-performance dielectric capacitors.
Structural, microstructural, dielectric and ferroelectric properties of lead free Ba0.85Ca0.15Zr0.1Ti0.9O3 ceramic

NASA Astrophysics Data System (ADS)

Sharma, Sarita; Sharma, Hakikat; Negi, N. S.

2018-05-01

Lead free Ba0.85Ca0.15Zr0.1Ti0.9O3(BCTZ) ceramic has been synthesized by sol-gel method. Properties of material are studied at different sintering temperatures for 5 hours. Structural and microstructural properties are analyzed by using X-ray diffractrometer (XRD) and scanning electron microscopy (SEM) at annealing temperature of 850°C and 1050°C XRD pattern confirm the perovskite structure of the material without any unwanted phases crystalinity increased with increase of sintering temperature so as roughness and porosity is decreased as shown by SEM micrographs. There is large improvement in density with rise of sintering temperature which also leads to drastic change in ferroelectric and dielectric properties.
Structure and Differentiated Electrical Characteristics of M1/2La1/2Cu3Ti4O12 (M = Li, Na, K) Ceramics Prepared by Sol-Gel Method

NASA Astrophysics Data System (ADS)

Liu, Zhanqing; Yang, Zupei

2017-10-01

New M1/2La1/2Cu3Ti4O12 (M = Li, Na, K) ceramics based on partial substitution of Li+, Na+, and K+ for La3+ in La2/3Cu3Ti4O12 (LCTO) have been prepared by a sol-gel method, and the effects of Li+, Na+, and K+ on the microstructure and electrical properties investigated in detail, revealing different results depending on the substituent. The cell parameter increased with increasing radius of the substituent ion (Li+, Na+, K+). Li1/2La1/2Cu3Ti4O12 (LLCTO) ceramic showed better frequency and temperature stability, but the dielectric constant decreased and the third abnormal dielectric peak disappeared from the dielectric temperature spectrum. Na1/2La1/2Cu3Ti4O12 (NLCTO) ceramic exhibited higher dielectric constant and better frequency and temperature stability, and displayed the second dielectric relaxation in electric modulus plots. The performance of K1/2La1/2Cu3Ti4O12 (KLCTO) ceramic was deteriorated. These different microstructures and electrical properties may be due to the effect of different defect structures generated in the ceramic as well as grain size. This work represents the first analysis and comparison of these remarkable differences in the electrical behavior of ceramics obtained by partial substitution of Li+, Na+, and K+ for La3+ in LCTO.
Microstructure and dielectric properties of pyrochlore Bi2Ti2O7 thin films

NASA Astrophysics Data System (ADS)

Cagnon, Joël; Boesch, Damien S.; Finstrom, Nicholas H.; Nergiz, Saide Z.; Keane, Sean P.; Stemmer, Susanne

2007-08-01

Bi2Ti2O7 thin films were grown by radio-frequency magnetron sputtering on bare and Pt-coated sapphire substrates at low substrate temperatures (˜200 °C). Postdeposition anneals were carried out at different temperatures to crystallize the films. Nearly phase-pure Bi2Ti2O7 thin films with the cubic pyrochlore structure were obtained at annealing temperatures up to 800 °C. Impurity phases, in particular Bi4Ti3O12, formed at higher temperatures. At 1 MHz, the dielectric constants were about 140-150 with a very small tunability and the dielectric loss was about 4×10-3. The dielectric loss increased with frequency. The dielectric properties of Bi2Ti2O7 films are compared to those of pyrochlore bismuth zinc niobate films.
Low-loss electromagnetic composites for RF and microwave applications.

PubMed

Wang, Hong; Yang, Haibo; Xiang, Feng; Yao, Xi

2011-09-01

Low-loss electromagnetic composites with high permittivity and permeability will benefit the miniaturization and multifunctional of RF devices. A kind of low-loss dielectric-magnetic ceramic-ceramic composite was developed by hybrid processing technology with the goal of integrating the dielectric properties and magnetic properties. The hybrid processing technology exhibits the advantage of lowered sintering temperatures for the composites while retaining good microstructure and high performance. By introducing elastomer as matrix, a kind of flexible low-loss dielectric-magnetic ceramic-polymer composite was prepared and studied. The obtained flexible dielectric-magnetic ceramic-polymer composite exhibited low loss and good mechanical properties. The results show good effects on lowering the dielectric loss and extending the cut-off magnetic frequency of the electromagnetic composite. Methods for tailoring the properties of the multifunctional composites were proposed and discussed.
Dielectric analysis of the APG/n-butanol/cyclohexane/water nonionic microemulsions.

PubMed

He, K J; Zhao, K S; Chai, J L; Li, G Z

2007-09-15

The nonionic APG/n-butanol/cyclohexane/water microemulsions with different microstructure, which is induced by the variation of water contents, are investigated by the dielectric spectroscopy. An appropriate dielectric theory, Hanai theory and the corresponding analytical method are applied to obtain the internal properties of the constituent phases of microemulsions, such as the relative permittivity and conductivity of continuous and dispersed phases and the volume fraction of dispersed phase. Using these parameters, the distribution of n-butanol in constituent phases, which is of important in the study field of the microstructure of microemulsion, is obtained quantitatively. It is found that the n-butanol molecules not only distribute in the interfacial APG layer but also in the continuous and dispersed phases. In addition, the percolation threshold is interpreted by using the dynamic percolation model. The structural and dynamic information are obtained, for instance, the critical volume fraction of water when percolation occurs and the characteristic time for the rearrangement of clusters. These parameters are intimately related to the properties of microemulsions, especially the characteristics of the interfacial layer.
Ultra-broadband Tunable Resonant Light Trapping in a Two-dimensional Randomly Microstructured Plasmonic-photonic Absorber

PubMed Central

Liu, Zhengqi; Liu, Long; Lu, Haiyang; Zhan, Peng; Du, Wei; Wan, Mingjie; Wang, Zhenlin

2017-01-01

Recently, techniques involving random patterns have made it possible to control the light trapping of microstructures over broad spectral and angular ranges, which provides a powerful approach for photon management in energy efficiency technologies. Here, we demonstrate a simple method to create a wideband near-unity light absorber by introducing a dense and random pattern of metal-capped monodispersed dielectric microspheres onto an opaque metal film; the absorber works due to the excitation of multiple optical and plasmonic resonant modes. To further expand the absorption bandwidth, two different-sized metal-capped dielectric microspheres were integrated into a densely packed monolayer on a metal back-reflector. This proposed ultra-broadband plasmonic-photonic super absorber demonstrates desirable optical trapping in dielectric region and slight dispersion over a large incident angle range. Without any effort to strictly control the spatial arrangement of the resonant elements, our absorber, which is based on a simple self-assembly process, has the critical merits of high reproducibility and scalability and represents a viable strategy for efficient energy technologies. PMID:28256599
Sintering characteristic and microwave dielectric properties of 0.45Ca0.6Nd0.267TiO3-0.55Li0.5Nd0.5TiO3 ceramics with La2O3-B2O3-ZnO additive

NASA Astrophysics Data System (ADS)

Chen, Yawei; Zhang, Shuren; Li, Enzhu; Niu, Na; Yang, Hongcheng

2018-02-01

The La2O3-B2O3-ZnO (LBZ) glass was proved to be an effective sintering aid of the 0.45Ca0.6Nd0.26TiO3-0.55Li0.5Nd0.5TiO3 (CNT-LNT) ceramics. The influence of LBZ glass on the phase composition, low temperature sintering process, microstructure, activation energy, and dielectric properties of CNT-LNT ceramics was investigated in detail. The LBZ glass induced an obvious decrease of the CNT-LNT ceramics sintering temperature from 1350 to 1000 °C due to the liquid phase formation, which reduced the activation energy ( E a) of the CNT-LNT ceramics. In addition, the near zero temperature coefficient of resonant frequency (τƒ) value was obtained by adding moderate quantity of LBZ glass. CNT-LNT + 5 wt% LBZ (CNT-LNT + 5L) ceramics sintered at 1000°C/4 h displayed good microwave dielectric properties of: ɛ r = 101.7, Q × f = 1560 GHz ( f = 3.25 GHz) and τ ƒ = 2.3 ppm °C-1.
Center for Dielectric Studies at the Pennsylvania State University,

DTIC Science & Technology

1983-05-01

microstructure. The permittivity shows a weak peak near 100K which also has clear relaxation character and closely duplicates the behavior of higA purity...departures from the expected Curie-Weiss made by Demurov and Venevtsev.1 both hysteresis loops in P(E) behavior . Clearly. from the frequency response and...dielectric measurements, an powderl had second phase KzTa.O,,; powder II was completely anomalous behavior was observed by inelastic neutron scattering

Dielectric relaxation of near-percolated carbon nanofiber polypropylene composites

NASA Astrophysics Data System (ADS)

Paleo, A. J.; Zille, A.; Van Hattum, F. W.; Ares-Pernas, A.; Agostinho Moreira, J.

2017-07-01

In this work, the morphological, structural and dielectric analysis of near-percolated polypropylene (PP) composites containing carbon nanofibers (CNF) processing by melt-mixing are investigated. Whereas the morphological analysis shows that CNF exhibit some tendency to agglomerate within the PP matrix, the structural analysis showed first a general decrease in the intensity of the IR bands as a consequence of the interaction between carbon nanofibers and PP matrix and second an increase of the crystallinity degree of the PP/CNF composites when compared to the pure PP. The dielectric analysis demonstrates enhanced dielectric constants (from 2.97 for neat polymer to 9.7 for 1.9 vol% loaded composites at 200 Hz) and low dielectric losses. Furthermore, the dielectric relaxation for composites with concentrations in the vicinity of percolation is evidenced and well described by the generalized polydispersive Cole-Cole model from which the values of static dielectric constant (εs) , high frequency dielectric constant (ε∞) , distribution of relaxation time (α) and mean relaxation time (τo), are determined, suggesting that this latter analysis constitutes a strong tool for understanding the relationships between microstructure and dielectric properties in this type of polymer composites.
THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

NASA Astrophysics Data System (ADS)

Xu, Jing; He, Bo; Liu, Han Xing

It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current-voltage (J-V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.
Sensitivity of Dielectric Properties to Wear Process on Carbon Nanofiber/High-Density Polyethylene Composites.

PubMed

Liu, Tian; Wood, Weston; Zhong, Wei-Hong

2011-12-01

We examined the correlation of wear effects with dielectric properties of carbon nanofibers (CNFs; untreated and organosilane-treated)-reinforced high-density polyethylene (HDPE) composites. Wear testing for the nanocomposites over up to 120 h was carried out, and then, dielectric permittivity and dielectric loss factor of the polymer composites with the increased wear time were studied. Scanning electron microscope and optical microscope observations were made to analyze the microstructure features of the nanocomposites. The results reveal that there exist approximate linear relationships of permittivity with wear coefficient for the nanocomposites. Composites containing silanized CNFs with the sufficiently thick coating exhibited high wear resistance. The change in permittivity was more sensitive to the increased wear coefficient for the nanocomposites with lower wear resistance. This work provides potential for further research on the application of dielectric signals to detect the effects of wear process on lifetime of polymeric materials.
Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

S Kim; M Jang; H Yang

2011-12-31

Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, weremore » characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.« less
Structural, dielectric and magnetic properties of NiFe2O4 prepared via sol-gel auto-combustion method

NASA Astrophysics Data System (ADS)

Sun, Li; Zhang, Ru; Wang, Zhenduo; Ju, Lin; Cao, Ensi; Zhang, Yongjia

2017-01-01

Nickelferrite (NiFe2O4)powders were synthesized via sol-gel auto-combustion method and the corresponding temperature dependence of microstructure, dielectric and magnetic properties have been investigated. Results of XRD and SEM indicate that the NiFe2O4 samples exhibit a typical single phase spinel structure and a uniform particle distribution. The dielectric constant and dielectric loss measurements show strong frequency dependence of all the samples. The peak observed in frequency dependence of dielectric loss measurements shifts to higher frequency with the increasing sintering temperature, indicating a Debye-like dielectric relaxation. The remanent magnetization increases with the increasing grain size while the coercivity is just the opposite. The saturation magnetization can achieve 50 emu/g when the sintering temperature is more than 1000 °C, and the lowest coercivity (159.49 Oe) was observed in the NFO sample sintered at 1300 °C for 2 h.
Liquid Metals: Stretchable, High-k Dielectric Elastomers through Liquid-Metal Inclusions (Adv. Mater. 19/2016).

PubMed

Bartlett, Michael D; Fassler, Andrew; Kazem, Navid; Markvicka, Eric J; Mandal, Pratiti; Majidi, Carmel

2016-05-01

An all-soft-matter composite consisting of liquid metal microdroplets embedded in a soft elastomer matrix is presented by C. Majidi and co-workers on page 3726. This composite exhibits a high dielectric constant while maintaining exceptional elasticity and compliance. The image shows the composite's microstructure captured by 3D X-ray imaging using a nano-computed tomographic scanner. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Microstructure, Thermal, Mechanical, and Dielectric Properties of BaO-CaO-Al2O3-B2O3-SiO2 Glass-Ceramics

NASA Astrophysics Data System (ADS)

Li, Bo; Bian, Haibo; Fang, Yi

2017-12-01

BaO-CaO-Al2O3-B2O3-SiO2 (BCABS) glass-ceramics were prepared via the method of controlled crystallization. The effect of CaO modification on the microstructure, phase evolution, as well as thermal, mechanical, and dielectric properties was investigated. XRD identified that quartz is the major crystal phase; cristobalite and bazirite are the minor crystal phases. Moreover, the increase of CaO could inhibit the phase transformation from quartz to cristobalite, but excessive CaO would increase the porosity of the ceramics. Additionally, with increasing the amount of CaO, the thermal expansion curve tends to be linear, and subsequently the CTE value decreases gradually, which is attributed to the decrease of cristobalite with high CTE and the formation of CaSiO3 with low CTE. The results indicated that a moderate amount of CaO helps attaining excellent mechanical, thermal, and dielectric properties, that is, the specimen with 9 wt% CaO sintered at 950 °C has a high CTE value (11.5 × 10-6/°C), a high flexural strength (165.7 MPa), and good dielectric properties (ɛr = 6.2, tanδ = 1.8 × 10-4, ρ = 4.6 × 1011 Ω•cm).
Calcination temperature effect on the microstructure and dielectric properties of M-type strontium hexagonal ferrites

NASA Astrophysics Data System (ADS)

Mohammed, J.; Sharma, Jyoti; Kumar, Sachin; Trudel, T. T. Carol; Srivastava, A. K.

2017-07-01

M-type hexagonal ferrites have found wide application in electronics industry due to the possibility of tuning properties such as dielectric properties. An improved dielectric property is useful in high frequency application. In this paper, we studied the effect of calcination temperature on structural and dielectric properties of Al-Mn substituted M-type strontium hexagonal ferrites with chemical composition Sr1-xAlxFe12-yMnyO19 (x=0.3 and y=0.6) synthesized by sol-gel auto-combustion method. The prepared sample was sintered at four different temperatures (T=750°C, 850°C, 950°C and 1050°C) for 5 hours. Characterisations of the synthesized samples were carried out using X-ray diffraction (XRD), impedance analyser, field emission electron microscope (FE-SEM) and energy dispersive X-ray (EDX) spectroscopy. The dielectric properties were explained on the basis of Koop's phenomenological theory and Maxwell Wagner theory. The sample calcinated at 750°C shows the highest value of dielectric constant and AC conductivity whereas that calcinated at 1050°C exhibit the lowest dielectric losses.
Ferroelectric thin-film active sensors for structural health monitoring

NASA Astrophysics Data System (ADS)

Lin, Bin; Giurgiutiu, Victor; Yuan, Zheng; Liu, Jian; Chen, Chonglin; Jiang, Jiechao; Bhalla, Amar S.; Guo, Ruyan

2007-04-01

Piezoelectric wafer active sensors (PWAS) have been proven a valuable tool in structural health monitoring. Piezoelectric wafer active sensors are able to send and receive guided Lamb/Rayleigh waves that scan the structure and detect the presence of incipient cracks and structural damage. In-situ thin-film active sensor deposition can eliminate the bonding layer to improve the durability issue and reduce the acoustic impedance mismatch. Ferroelectric thin films have been shown to have piezoelectric properties that are close to those of single-crystal ferroelectrics but the fabrication of ferroelectric thin films on structural materials (steel, aluminum, titanium, etc.) has not been yet attempted. In this work, in-situ fabrication method of piezoelectric thin-film active sensors arrays was developed using the nano technology approach. Specification for the piezoelectric thin-film active sensors arrays was based on electro-mechanical-acoustical model. Ferroelectric BaTiO3 (BTO) thin films were successfully deposited on Ni tapes by pulsed laser deposition under the optimal synthesis conditions. Microstructural studies by X-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO thin films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no inter-diffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. The research objective is to develop the fabrication and optimum design of thin-film active sensor arrays for structural health monitoring applications. The short wavelengths of the micro phased arrays will permit the phased-array imaging of smaller parts and smaller damage than is currently not possible with existing technology.
Control of Dielectric Constant and Anti-Bacterial Activity of PVA-PEG/x-SnO2 Nanofiber

NASA Astrophysics Data System (ADS)

Diantoro, M.; Sari, L. A.; Istirohah, T.; Kusumawati, A. D.; Nasikhudin; Sunaryono

2018-05-01

Research in the utilization of organic natural materials for electronic devices and for the biological application becoming extensively studied. We report a comprehensive review of the role of SnO2 nanoparticle and the effect of light intensity on toxicity properties, antibacterial activity, microstructure and electrical properties of PVA-PEG nanofiber films. The PVA-PEG/SnO2 nanofiber structure has been successfully fabricated on the ITO-glass substrate. Characterization was performed on samples using FTIR, XRD, SEM, toxicity and antibacterial tests, as well as LCR measurement. The presence of various light intensities has also measured the dielectric constant. The addition of SnO2 nanoparticle influenced the structure of the PVA-PEG/SnO2 nanofiber bonding functional group indicated by the appearance of Sn-O-Sn peaks at 648.08 cm-1 and 958 cm-1 wavenumbers. The addition of SnO2 nanoparticles affects the grain size of SnO2. Addition of SnO2 nanoparticles increases the detected toxicity voltage but is still below the threshold. It means the compound is not toxic, or safe to use in the body. The film lacks the antibacterial power of S. Aurelius. The addition of nanoparticles SnO2 increases the dielectric constant but decreases with increasing frequency of input voltage and the intensity of light employed to PVA-PEG/SnO2 nanofiber. The application of the light intensity reduces the dielectric constant of the PVA-PEG/SnO2 nanofiber in all nanoparticle doping ranges.
Microwave sintering of nanopowder ZnNb2O6: Densification, microstructure and microwave dielectric properties

NASA Astrophysics Data System (ADS)

Bafrooei, H. Barzegar; Nassaj, E. Taheri; Hu, C. F.; Huang, Q.; Ebadzadeh, T.

2014-12-01

High density ZnNb2O6 ceramics were successfully fabricated by microwave sintering of ZnO-Nb2O5 and ZnNb2O6 nanopowders. Phase formation, microstructure and microwave electrical properties of the microwave sintered (MS) and microwave reaction sintered (MRS) specimens were examined using X-ray diffraction, field emission scanning electron microscopy and microwave dielectric properties measurement. Specimens were sintered in a temperature range from 950 to 1075 °C for 30 min at an interval of 25 °C using a microwave furnace operated at 2.45 GHz frequency, 3 kW power. XRD pattern revealed the formation of pure columbite phase of ZnNb2O6. The SEM micrographs show grain growth and reduction in porosity of specimens with the increase in sintering temperature. Good combination of microwave dielectric properties (εr~23.6, Qf~64,300 GHz and τf~-66 ppm/°C and εr~24, Qf~75,800 GHz and τf~-64 ppm/°C) was obtained for MS- and MRS-prepared samples at 1000 °C and 1050 °C for 30 min, respectively.
Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-01-01

Dielectric spectroscopy analysis of the high permittivity (κ˜104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.
Numerical simulation of reflective infrared absorber based on metal and dielectric nanorings

NASA Astrophysics Data System (ADS)

Wei, Dong; Zhang, Guizhong; Ding, Xin; Yao, Jianquan

2018-04-01

We propose a subwavelength micro-structure of /metal-ring/dielectric-ring/metal-substrate/ for infrared absorber, and numerically simulate its spectral reflectance in the infrared regime. Besides its pragmatic fabrication, this nanoring structure is characterized by excellent infrared reflectance, angle and polarization insensitivities and large tunability. Based upon the nanoring structure, a multilayered nanoring structure is demonstrated to be able to further tune the resonance wavelength. We also use an area-corrected plasmon polariton model to decipher the resonance wavelengths.
Dielectric and AC conductivity studies of Nd substituted 0.8BaTiO{sub 3}-0.2(Bi{sub 0.5(1-x)}Nd{sub 0.5x}K{sub 0.5})TiO{sub 3} lead free ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramesh, M. N. V.; Ramesh, K. V., E-mail: kv-ramesh5@yahoo.co.in

2016-05-23

0.8BaTiO{sub 3} – 0.2(Bi{sub 0.5(1-x)}Nd{sub 0.5x}K{sub 0.5})TiO{sub 3} (0.01 ≤ x ≤ 0.06) lead free ceramic materials have been prepared by solid state reaction method and followed by high energy ball milling process. X-ray diffraction studies confirm the tetragonal structure of the materials at room temperature. Lattice parameters and density are decreasing with increase of Nd substitution. Microstructure studies were done by using Scanning electron microscope and it found that grain size is decreasing with increase of Nd substitution. Temperature and frequency dependent dielectric studies reveal relaxor behaviour of the materials. Dielectric constant, dielectric loss and Curie temperature are decreasingmore » with Nd substitution. Maximum Curie temperature of 195°C was observed at 1 MHz for x=0.01 Nd substituted sample. Degree of diffuseness was calculated from the modified Curie-Weiss law and it is increasing with Nd substitution. AC conductivity is increasing with increase of Nd substitution and observed maximum activation energy of 0.52 eV for x=0.02 Nd substituted sample.« less
Electrohydrodynamic pressure enhanced by free space charge for electrically induced structure formation with high aspect ratio.

PubMed

Tian, Hongmiao; Wang, Chunhui; Shao, Jinyou; Ding, Yucheng; Li, Xiangming

2014-10-28

Electrically induced structure formation (EISF) is an interesting and unique approach for generating a microstructured duplicate from a rheological polymer by a spatially modulated electric field induced by a patterned template. Most of the research on EISF have so far used various dielectric polymers (with an electrical conductivity smaller than 10(-10) S/m that can be considered a perfect dielectric), on which the electric field induces a Maxwell stress only due to the dipoles (or bounded charges) in the polymer molecules, leading to a structure with a small aspect ratio. This paper presents a different approach for improving the aspect ratio allowed in EISF by doping organic salt into the perfect dielectric polymer, i.e., turning the perfect dielectric into a leaky dielectric, considering the fact that the free space charges enriched in the leaky dielectric polymer can make an additional contribution to the Maxwell stress, i.e., electrohydrodynamic pressure, which is desirable for high aspect ratio structuring. Our numerical simulations and experimental tests have shown that a leaky dielectric polymer, with a small conductivity comparable to that of deionized water, can be much more effective at being electrohydrodynamically deformed into a high aspect ratio in comparison with a perfect dielectric polymer when both of them have roughly the same dielectric constant.
Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

PubMed Central

2011-01-01

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated. PMID:21711646
Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

2011-12-01

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.
Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

PubMed

Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

2011-02-04

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.
Influence of Sn doping in BaSnxTi1-xO3 ceramics on microstructural and dielectric properties

NASA Astrophysics Data System (ADS)

Ansari, Mohd. Azaj; Sreenivas, K.

2018-05-01

BaSnxTi1-x O3 solid solutions with varying Sn content (x = 0.00, 0.05, 0.15, 0.25) prepared by solid state reaction method have been studied for their structural and dielectric properties. X-ray diffraction and Raman spectroscopic analysis show composition induced modifications in the crystallographic structure, and with increasing Sn content the structure changes from tetragonal to cubic structure. The tetragonal distortion decreases with increasing Sn, and the structure becomes purely cubic for x =0.25. Changes in the structure are reflected in the temperature dependent dielectric properties. For increasing Sn content the peak dielectric constant is found to increase and the phase transition temperature (Tc) decreases to lower temperature. The purely cubic structure with x=0.25 shows a diffused phased transition.
Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

NASA Astrophysics Data System (ADS)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

Dielectric properties and nonlinear I-V electrical behavior of (Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Sun, Li; Ni, Qing; Guo, Jianqin; Cao, Ensi; Hao, Wentao; Zhang, Yongjia; Ju, Lin

2018-06-01

(Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics (CaCu3-2 x Li x Al x Ti4O12, x = 0.05, 0.1, 0.15) were prepared by a sol-gel method and were sintered at 1020-1080 °C for 8 h to improve the geometric microstructure, dielectric and nonlinear I-V electrical properties. Notably, very high dielectric constant of 1 × 105 with good dielectric-frequency as well as dielectric-temperature stability can be achieved in CaCu2.8Li0.1Al0.1Ti4O12 ceramic sintered at 1060 °C. The average grain sizes, resistivity and the non-Ohmic properties are also improved compared to pure CaCu3Ti4O12. These results indicate that (Li1+, Al3+) co-doping at the Cu2+ site can improve the dielectric properties of CaCu3Ti4O12, supporting the internal barrier layer capacitance effect of Schottky barriers at grain boundaries.
Origin of dielectric relaxor behavior in PVDF-based copolymer and terpolymer films

NASA Astrophysics Data System (ADS)

Pramanick, Abhijit; Osti, Naresh C.; Jalarvo, Niina; Misture, Scott T.; Diallo, Souleymane Omar; Mamontov, Eugene; Luo, Y.; Keum, Jong-Kahk; Littrell, Ken

2018-04-01

Relaxor ferroelectrics exhibit frequency-dispersion of their dielectric permittivity peak as a function of temperature, the origin of which has been widely debated. Microscopic understanding of such behavior for polymeric ferroelectrics has presented new challenges since unlike traditional ceramic ferroelectrics, dielectric relaxation in polymers is a consequence of short-range molecular dynamics that are difficult to measure directly. Here, through careful analysis of atomic-level H-atom dynamics as determined by Quasi-elastic Neutron Scattering (QENS), we show that short-range molecular dynamics within crystalline domains cannot explain the macroscopic frequency-dispersion of dielectric properties observed in prototypical polyvinylidene-fluoride (PVDF)-based relaxor ferroelectrics. Instead, from multiscale quantitative microstructural characterization, a clear correlation between the amount of crystalline-amorphous interfaces and dielectric relaxation is observed, which indicates that such interfaces play a central role. These results provide critical insights into the role of atomic and microscopic structures towards relaxor behavior in ferroelectric polymers, which will be important for their future design.
Understanding the Percolation Characteristics of Nonlinear Composite Dielectrics

PubMed Central

Yang, Xiao; Hu, Jun; Chen, Shuiming; He, Jinliang

2016-01-01

Nonlinear composite dielectrics can function as smart materials for stress control and field grading in all fields of electrical insulations. The percolation process is a significant issue of composite dielectrics. However, the classic percolation theory mainly deals with traditional composites in which the electrical parameters of both insulation matrix and conducting fillers are independent of the applied electric field. This paper measured the nonlinear V-I characteristics of ZnO microvaristors/silicone rubber composites with several filler concentrations around an estimated percolation threshold. For the comparison with the experiment, a new microstructural model is proposed to simulate the nonlinear conducting behavior of the composite dielectrics modified by metal oxide fillers, which is based on the Voronoi network and considers the breakdown feature of the insulation matrix for near percolated composites. Through both experiment and simulation, the interior conducting mechanism and percolation process of the nonlinear composites were presented and a specific percolation threshold was determined as 33%. This work has provided a solution to better understand the characteristics of nonlinear composite dielectrics. PMID:27476998
Controlling of dielectrical properties of hydroxyapatite by ethylenediamine tetraacetic acid (EDTA) for bone healing applications

NASA Astrophysics Data System (ADS)

Kaygili, Omer; Ates, Tankut; Keser, Serhat; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin

2014-08-01

The hydroxyapatite (HAp) samples in the presence of various amounts of ethylenediamine tetraacetic acid (EDTA) were prepared by sol-gel method. The effects of EDTA on the crystallinity, phase structure, chemical, micro-structural and dielectric properties of HAp samples were investigated. With the addition of EDTA, the average crystallite size of the HAp samples is gradually decreased from 30 to 22 nm and the crystallinity is in the range of 65-71%. The values of the lattice parameters (a and c) and volume of the unit cell are decreased by stages with the addition of EDTA. The dielectric parameters such as relative permittivity, dielectric loss and relaxation time are affected by the adding of EDTA. The alternating current conductivity of the as-synthesized hydroxyapatites increases with the increasing frequency and obeys the universal power law behavior. The HAp samples exhibit a non-Debye relaxation mechanism. The obtained results that the dielectrical parameters of the HAp sample can be controlled by EDTA.
Understanding the Percolation Characteristics of Nonlinear Composite Dielectrics

NASA Astrophysics Data System (ADS)

Yang, Xiao; Hu, Jun; Chen, Shuiming; He, Jinliang

2016-08-01

Nonlinear composite dielectrics can function as smart materials for stress control and field grading in all fields of electrical insulations. The percolation process is a significant issue of composite dielectrics. However, the classic percolation theory mainly deals with traditional composites in which the electrical parameters of both insulation matrix and conducting fillers are independent of the applied electric field. This paper measured the nonlinear V-I characteristics of ZnO microvaristors/silicone rubber composites with several filler concentrations around an estimated percolation threshold. For the comparison with the experiment, a new microstructural model is proposed to simulate the nonlinear conducting behavior of the composite dielectrics modified by metal oxide fillers, which is based on the Voronoi network and considers the breakdown feature of the insulation matrix for near percolated composites. Through both experiment and simulation, the interior conducting mechanism and percolation process of the nonlinear composites were presented and a specific percolation threshold was determined as 33%. This work has provided a solution to better understand the characteristics of nonlinear composite dielectrics.
Microwave assisted synthesis and characterization of barium titanate nanoparticles for multi layered ceramic capacitor applications.

PubMed

Thirumalai, Sundararajan; Shanmugavel, Balasivanandha Prabu

2011-01-01

Barium titanate is a common ferroelectric electro-ceramic material having high dielectric constant, with photorefractive effect and piezoelectric properties. In this research work, nano-scale barium titanate powders were synthesized by microwave assisted mechano-chemical route. Suitable precursors were ball milled for 20 hours. TGA studies were performed to study the thermal stability of the powders. The powders were characterized by XRD, SEM and EDX Analysis. Microwave and Conventional heating were performed at 1000 degrees C. The overall heating schedule was reduced by 8 hours in microwave heating thereby reducing the energy and time requirement. The nano-scale, impurity-free and defect-free microstructure was clearly evident from the SEM micrograph and EDX patterns. LCR meter was used to measure the dielectric constant and dielectric loss values at various frequencies. Microwave heated powders showed superior dielectric constant value with low dielectric loss which is highly essential for the fabrication of Multi Layered Ceramic Capacitors.
Effects of microstructural defects on the performance of base-metal multilayer ceramic capacitors

NASA Astrophysics Data System (ADS)

Samantaray, Malay M.

Multilayer ceramic capacitors (MLCCs), owing to their processing conditions, can exhibit microstructure defects such as electrode porosity and roughness. The effect of such extrinsic defects on the electrical performance of these devices needs to be understood in order to achieve successful miniaturization into the submicron dielectric layer thickness regime. Specifically, the presence of non-planar and discontinuous electrodes can lead to local field enhancements while the relative morphologies of two adjacent electrodes determine variations in the local dielectric thickness. To study the effects of electrode morphologies, an analytical approach is taken to calculate the electric field enhancement and leakage current with respect to an ideal parallel-plate capacitor. Idealized electrode defects are used to simulate the electric field distribution. It is shown that the electrode roughness causes both the electric field and the leakage current to increase with respect to that of the ideal flat parallel-plate capacitor. Moreover, finite element methods are used to predict electric field enhancements by as high as 100% within capacitor structures containing rough interfaces and porosity. To understand the influence of microstructural defects on field distributions and leakage current, the real three-dimensional microstructure of local regions in MLCCs are reconstructed using a serial-sectioning technique in the focused ion beam. These microstructures are then converted into a finite element model in order to simulate the perturbations in electric field due to the presence of electrode defects. The electric field is three times the average value, and this leads to increase in current density of these devices. It is also shown that increasing sintering rates of MLCCs leads to improved electrode morphology with smoother more continuous electrodes, which in turn leads to a decrease in electric field enhancement and calculated leakage current density. To simulate scaling effects, the dielectric layer thickness is reduced from 2.0mum to 0.5mum in the three-dimensional microstructure keeping the same electrode morphology. It is seen that the effect of microstructure defects is more pronounced as one approaches thinner layers, leading to higher local electric field concentrations and a concomitant drop in insulation resistance. It is also seen that the electric field values are as high as 3.8 times the average field in termination regions due the disintegrated structure of the electrodes. In order to assess the effect of microstructure on MLCC performance, two sets of multilayer capacitors subjected to two vastly different sintering rates of 150ºC/hr and 3000ºC/hr are compared for their electrical properties. Capacitors with higher electrode continuity exhibit proportionally higher capacitance, provided the grain size distributions are similar. From the leakage current measurements, it is found that the Schottky barrier at the electrode-dielectric interface controls the conduction mechanism. This barrier height is calculated to be 1.06 eV for slow-fired MLCCs and was 1.15 for fast-fired MLCCs. This shows that high concentration of electrode defects cause field perturbations and subsequent drop in the net Schottky barrier height. These results are further supported by frequency-dependent impedance measurements. With temperature dependence behavior of current-voltage trends we note that below temperatures of 135°C, the conduction is controlled by interfacial effects, whereas at higher temperatures it is consistent with bulk-controlled space charge limited current for the samples that are highly reoxidized. The final part of this work studies the various aspects of the initial stages of degradation of MLCCs. MLCCs subjected to unipolar and bipolar degradation are studied for changes in microstructure and electrical properties. With bipolar degradation studies new insights into degradation are gained. First, the ionic accumulation with oxygen vacancies at cathodes is only partially reversible. This has implications on the controlling interface with electronic conduction. Also, it is shown that oxygen vacancy accumulation near the cathodes leads to a drop in insulation resistance. The capacitance also increases with progressive steps of degradation due to the effective thinning of dielectric layer. The reduction in interfacial resistance is also confirmed by impedance analysis. Finally, it is observed that on degradation, the dominant leakage current mechanism changes from being controlled by cathodic injection of electrons to being controlled by their anodic extraction. (Abstract shortened by UMI.)
Microstructure and dielectric properties of silver-barium titanate nanocomplex materials by wet chemical approach

NASA Astrophysics Data System (ADS)

Ueno, Shintaro; Sakamoto, Yasunao; Nakashima, Kouichi; Wada, Satoshi

2014-09-01

To develop ceramic capacitors with a high effective dielectric constant, we attempted to fabricate BaTiO3 (BT) complexes with embedded Ag nanoparticles by wet chemical processes. Ag nanoparticle-adsorbed dendritic BT particles, Ag-BT hybrid particles, were synthesized from the sol-gel-derived precursor gel powders containing Ag, Ba, and Ti by hydrothermal treatment. These particles were pressed with BT fillers and TiO2 precursor nanoparticles into green compacts, and then, the green compacts were chemically converted into the Ag/BT nanocomplex compacts in Ba(OH)2 aqueous solution under the hydrothermal condition at 160 °C. The effective dielectric constant of the resultant Ag/BT nanocomplexes increases with an increase in Ag content. The maximal effective dielectric constant of approximately 900 was recorded for the nanocomplex with the Ag content of 10.7 vol %.
Plasma-Sprayed Fine-grained Zirconium Silicate and Its Dielectric Properties

NASA Astrophysics Data System (ADS)

Ctibor, P.; Pala, Z.; Nevrlá, B.; Neufuss, K.

2017-05-01

The article is focused on selected dielectric and electrical properties of ZrSiO4, which was plasma sprayed by a water-stabilized plasma system. A combination of two feeding distances and three spray distances was utilized for spraying and the structure and properties of samples evaluated. The coatings were tested in alternating electric field to determine capacity and loss factor with the frequency from 100 Hz to 100 kHz. Relative permittivity was calculated from the capacity. Volume resistivity and dielectric strength of ZrSiO4 were measured in a direct current regime. The aim was to test electrically this natural silicate material in the form of plasma-sprayed deposits. Microstructure was characterized by relatively large and non-globular pores. Crystallites were very small, about 10-20 nm. Dielectric losses were small, resistivity as well as strength relatively high. This silicate ceramic was recognized to be prospective for electrical engineering.
Fabrication and properties of SiNO continuous fiber reinforced BN wave-transparent composites

NASA Astrophysics Data System (ADS)

Cao, F.; Fang, Z.; Chen, F.; Shen, Q.; Zhang, C.

2012-06-01

SiNO continuous fiber reinforced boron nitride (BN) wave-transparent composites (SiNO f /BN) have been fabricated by a precursor infiltration pyrolysis (PIP) method using borazine as the precursor. The densification behavior, microstructures, mechanical properties, and dielectric properties of the composites have been investigated. After four PIP cycles, the density of the composites had increased from 1.1 g·cm-3 to 1.81 g·cm-3. A flexural strength of 128.9 MPa and an elastic modulus of 23.5 GPa were achieved. The obtained composites have relatively high density and the fracture faces show distinct fiber pull-out and interface de-bonding features. The dielectric properties of the SiNO f /BN composites, including the dielectric constant of 3.61 and the dielectric loss angle tangent of 5.7×10-3, are excellent for application as wave-transparent materials.
Electric and dielectric properties of Bi-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo Fengchao; He Jinliang; Hu Jun

2009-04-01

Pure and Bi-doped Bi{sub x}CaCu{sub 3}Ti{sub 4}O{sub 12+1.5x} (BCCTO, x=0, 0.15, 0.25, and 0.3) ceramics were fabricated by the solid-state sintering method. The results indicate that the additional bismuth has a great influence on both the microstructures and the electric properties. A new phase (Bi{sub 4}Ti{sub 3}O{sub 12}) can be observed in the doped samples from the x-ray diffraction patterns. Additionally, the CCTO gain size can be controlled by bismuth content. All of the BCCTO samples show high dielectric permittivity ({approx}10{sup 4} at 10{sup 3} Hz) and varistor effect, and the relaxation peak shifts to higher frequency. The resistance risesmore » with the increase in bismuth, and the activation energy at the grain boundary is reduced from 0.65 to 0.47 eV.« less
Polarization-dependent diffraction in all-dielectric, twisted-band structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kardaś, Tomasz M.; Jagodnicka, Anna; Wasylczyk, Piotr, E-mail: pwasylcz@fuw.edu.pl

2015-11-23

We propose a concept for light polarization management: polarization-dependent diffraction in all-dielectric microstructures. Numerical simulations of light propagation show that with an appropriately configured array of twisted bands, such structures may exhibit zero birefringence and at the same time diffract two circular polarizations with different efficiencies. Non-birefringent structures as thin as 3 μm have a significant difference in diffraction efficiency for left- and right-hand circular polarizations. We identify the structural parameters of such twisted-band matrices for optimum performance as circular polarizers.
Sintering effects on dielectric properties of Zn-doped CaCu3Ti4O12 ceramic synthesized by modified sol-gel route

NASA Astrophysics Data System (ADS)

Singh, Laxman; Rai, U. S.; Rai, Alok Kumar; Mandal, K. D.

2013-01-01

CaCu2.90Zn0.10Ti4O12 ceramic was synthesized by a novel semi-wet route and calcined at 800°C in air for 8 h. The obtained powder was divided into three parts and sintered in air at 950°C for 6 h, 8 h, and 12 h, separately. XRD results confirmed the single phase formation of all the sintered samples with similar cubic structure of CaCu3Ti4O12 (CCTO). Scanning electron micrographs of the CaCu2.9Zn0.1Ti4O12 ceramic sintered for 6 h shows bimodal grain size distribution. Increasing the sintering time significantly promotes the grain growth and microstructural densification. The sintering duration was found to have tremendous influence on microstructure and dielectric properties of CaCu2.90Zn0.10Ti4O12 ceramic. The CaCu2.9Zn0.1Ti4O12 ceramic sintered for 12 h exhibited high dielectric constant ɛ r ˜ 5971 at 1 kHz and room temperature. It is found that ɛ r is independent at high frequency and weakly dependent on temperature.
Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

NASA Astrophysics Data System (ADS)

Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

2000-01-01

Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.
Preparation of LTCC materials with adjustable permittivity based on BaO–B{sub 2}O{sub 3}–SiO{sub 2}/BaTiO{sub 3} system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Kai-tuo; He, Yan; Liang, Zhong-yuan

2015-05-15

Graphical abstract: The dielectric constant (ϵ) of the sintered BaO–B{sub 2}O{sub 3}–SiO{sub 2}/BaTiO{sub 3} glass/ceramics (the sintered samples with line shrinkage of 10%) changed from 5 to 30 and the dielectric losses (tanδ) was lower than 0.05 at 100 MHz with the amount of BaTiO{sub 3} additive increment from 60 wt% to 90 wt% fraction. - Highlights: • The ϵ of BaO–B{sub 2}O{sub 3}–SiO{sub 2} glass can be adjusted from 5 to 30 by adding BaTiO{sub 3}. • The influence factors on dielectric are the secondary phase and microstructure. • BaO–B{sub 2}O{sub 3}–SiO{sub 2}/BaTiO{sub 3} system can fabricate LTCC whenmore » BaTiO{sub 3} located in 60–80 wt%. - Abstract: This paper studied the preparation and characterization of LTCC (low temperature co-fired ceramics) materials based on BaO–B{sub 2}O{sub 3}–SiO{sub 2}/BaTiO{sub 3} glass–ceramics, where the sintering temperature was about 900 °C and dielectric constant was effectively adjustable from 5 to 30 by changing the BaTiO{sub 3} fraction from 60 wt% to 90 wt%. X-ray diffractometer (XRD), scanning electron microscopy (SEM) were used to examine the effect of different amounts additive on the dielectric properties of this LTCC system and the crystal structure change. The results indicated that BaTiO{sub 3} can be used as a dielectric additive aim to adjust the permittivity of BaO–B{sub 2}O{sub 3}–SiO{sub 2} glass, which the main influence factors on dielectric are the contents of the secondary phase, the BaTiO{sub 3} phase fraction and the porous structure of the sintered body. Therefore, the microstructure and dielectric property of BaO–B{sub 2}O{sub 3}–SiO{sub 2}/BaTiO{sub 3} glass–ceramics composites could be controlled by adjusting the content of BaTiO{sub 3} additive.« less
Microstructural and optical properties of Ca and Cr doped cobalt ferrite nanoparticles synthesized by auto combustion

NASA Astrophysics Data System (ADS)

Agrawal, Shraddha; Parveen, Azra; Azam, Ameer

2018-05-01

The Ca and Cr doped cobalt ferrite nanoparticles (Co0.8Ca0.2) (Fe0.8 Cr0.2)2O4 were synthesized by auto combustion method. Microstructural studies were carried out by X-ray diffraction (XRD). The crystalline size of synthesized nanoparticles as determined by the XRD was found to be 17.6 nm. These structural studies suggest that the crystal system remains spinal even with the doping of calcium and chromium. Optical properties of Ca and Cr doped cobalt ferrite were studied by UV-visible technique in the range of 200-800 nm. The energy band gap was calculated with the help of Tauc relationship. Ca and Cr doped cobalt ferrite annealed at 600°C exhibit significant dispersion in complex permeability. The dielectric constant and dielectric loss of cobalt ferrite were studied as a function of frequency and were explained on the basis of Koop's theory based on Maxwell Wagner two layer models and electron hopping.
Evaluation of the influence of the internal aqueous solvent structure on electrostatic interactions at the protein-solvent interface by nonlocal continuum electrostatic approach.

PubMed

Rubinstein, Alexander; Sherman, Simon

The dielectric properties of the polar solvent on the protein-solvent interface at small intercharge distances are still poorly explored. To deconvolute this problem and to evaluate the pair-wise electrostatic interaction (PEI) energies of the point charges located at the protein-solvent interface we used a nonlocal (NL) electrostatic approach along with a static NL dielectric response function of water. The influence of the aqueous solvent microstructure (determined by a strong nonelectrostatic correlation effect between water dipoles within the orientational Debye polarization mode) on electrostatic interactions at the interface was studied in our work. It was shown that the PEI energies can be significantly higher than the energies evaluated by the classical (local) consideration, treating water molecules as belonging to the bulk solvent with a high dielectric constant. Our analysis points to the existence of a rather extended, effective low-dielectric interfacial water shell on the protein surface. The main dielectric properties of this shell (effective thickness together with distance- and orientation-dependent dielectric permittivity function) were evaluated. The dramatic role of this shell was demonstrated when estimating the protein association rate constants.
Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon

PubMed Central

Gao, Jinghui; Wang, Yan; Liu, Yongbin; Hu, Xinghao; Ke, Xiaoqin; Zhong, Lisheng; He, Yuting; Ren, Xiaobing

2017-01-01

Although dielectric energy-storing devices are frequently used in high voltage level, the fast growing on the portable and wearable electronics have been increasing the demand on the energy-storing devices at finite electric field strength. This paper proposes an approach on enhancing energy density under low electric field through compositionally inducing tricriticality in Ba(Ti,Sn)O3 ferroelectric material system with enlarged dielectric response. The optimal dielectric permittivity at tricritical point can reach to εr = 5.4 × 104, and the associated energy density goes to around 30 mJ/cm3 at the electric field of 10 kV/cm, which exceeds most of the selected ferroelectric materials at the same field strength. The microstructure nature for such a tricritical behavior shows polarization inhomogeneity in nanometeric scale, which indicates a large polarizability under external electric field. Further phenomenological Landau modeling suggests that large dielectric permittivity and energy density can be ascribed to the vanishing of energy barrier for polarization altering caused by tricriticality. Our results may shed light on developing energy-storing dielectrics with large permittivity and energy density at low electric field. PMID:28098249
Effects of TiO2 addition on microwave dielectric properties of Li2MgSiO4 ceramics

NASA Astrophysics Data System (ADS)

Rose, Aleena; Masin, B.; Sreemoolanadhan, H.; Ashok, K.; Vijayakumar, T.

2018-03-01

Silicates have been widely studied for substrate applications in microwave integrated circuits owing to their low dielectric constant and low tangent loss values. Li2MgSiO4 (LMS) ceramics are synthesized through solid-state reaction route using TiO2 as an additive to the pure ceramics. Variations in dielectric properties of LMS upon TiO2 addition in different weight percentages (0.5, 1.5, 2) are studied by keeping the sintering parameters constant. Crystalline structure, phase composition, and microstructure of LMS and LMS-TiO2 ceramics were studied using x-ray diffraction spectrometer and High Resolution Scanning electron microscope. Density was measured through Archimedes method and the microwave dielectric properties were examined by Cavity perturbation technique. LMS achieved relative permittivity (ε r) of 5.73 and dielectric loss (tan δ) of 5.897 × 10‑4 at 8 GHz. In LMS-TiO2 ceramics, 0.5 wt% TiO2 added LMS showed comparatively better dielectric properties than other weight percentages where ε r = 5.67, tan δ = 7.737 × 10‑4 at 8 GHz.
Detection of Ionic liquid using terahertz time-domain spectroscopy

NASA Astrophysics Data System (ADS)

Wang, Cuicui; Zhao, Xiaojing; Liu, Shangjian; Zuo, Jian; Zhang, Cunlin

2018-01-01

Terahertz (THz, THz+1012Hz) spectroscopy is a far-infrared analytical technology with spectral bands locating between microware and infrared ranges. Being of excellent transmission, non-destruction and high discrimination, this technology has been applied in various fields such as physics, chemistry, nondestructive detection, communication, biomedicine public security. Terahertz spectrum is corresponding with vibration and rotation of liquid molecules, which is suitable to identify and study the liquid molecular dynamics. It is as a powerful spectral detection technology, terahertz time-domain spectroscopy is widely used in solution detection. can enable us to extract the material parameters or dielectric spectrum that show material micro-structure and dynamics by measuring amplitude and phase from coherent terahertz pulses. Ionic liquid exists in most biological tissues, and it is very important for life. It has recently been suggested that near-fired terahertz ionic contrast microscopy can be employed to image subtle changes in ionic concentrations arising from neuronal activity. In this paper, we detected Ionic liquid with different concentrations at room temperature by THz-TDS technique in the range of 0.2-1.5 THz. The liquid cell with a thickness of 0.2mm is made of quartz. The absorption coefficient, refractive index and dielectric function of solutions can be extracted based on THz-TDS. We use an expanded model for fitting the dielectric function based on a combination of a Debye relation for the anions and cations. We find A linear increase of the real and imaginary part of the dielectric function compared with pure water with increasing ion concentrations. A good agreement between the model and the experimental results is obtained. By means of dielectric relaxation process, it was found that the characteristic time of molecular movement and the information related to the liquid molecular structure and movement was obtained.

Dielectric, magnetic, ferroelectric, and Mossbauer properties of bismuth substituted nanosized cobalt ferrites through glycine nitrate synthesis method

NASA Astrophysics Data System (ADS)

Routray, Krutika L.; Sanyal, Dirtha; Behera, Dhrubananda

2017-12-01

CoFe2-xBixO4 nanoferrites with x = 0, 0.05, 0.1, 0.5, and 1.0 have been synthesized by the glycine nitrate process. The present study investigates the effect of Bi3+ substitution on the microstructural, dielectric, ferroelectric, magnetic, and Mossbauer properties of CoFe2O4 nanoparticles. The X-ray diffraction technique was used to confirm the phase purity and estimate the crystallite size which revealed the formation of a secondary phase when Bi3+ concentration exceeds x = 0.5. Transmission electron microscopy indicated the formation of grains by aggregation of small crystallites with a reduction in grain size to 20 nm with an increase in Bi3+ content and also divulged the lattice parameter value to be 8.378 Å, confirming the crystalline nature of the synthesised sample. Dielectric properties performed in the frequency range of 100 Hz to 1 MHz determined that the dielectric behavior is attributed to the Maxwell-Wagner polarization and the activation energy of the specimens is calculated from the dielectric measurements. The hysteresis curve indicated the ferrimagnetic nature of the samples. The samples also exhibited a well saturated P-E loop with gradual lowering in remenant polarization, coercive field, and saturation polarization with an increase in bismuth concentration. Mössbauer spectroscopy analysis confirmed the changes in magnetic moment of ions, their coupling with neighbouring ions, and cation exchange interactions. Owing to the high physical, thermal, and chemical stabilities, these magnetic ceramics, CoFe2-xBixO4, possesses tremendous potential in major understanding of magnetism and in magnetic recording applications for high density information storage.
Densification of PZT Ceramics with V2O5 Additive.

DTIC Science & Technology

1979-01-01

Additions of V2O5 from 0.1 to 8.0 w/o to a coprecipitated Pb(Zr.53 Ti.47) O3 ceramic promoted rapid densification below 1025 C, eliminating the need...for PbO atmosphere control. Dielectric properties were found to be dependent on the amount of V2O5 added and on the microstructure developed, but were...comparable to reported values for this PZT composition for additions of V2O5 or = 1.5 W/O. The indicated densification mechanism is one of activated sintering catalyzed by generation of oxygen defects on decomposition of the V2O5 .
Process to form mesostructured films

DOEpatents

Brinker, C. Jeffrey; Anderson, Mark T.; Ganguli, Rahul; Lu, Yunfeng

1999-01-01

This invention comprises a method to form a family of supported films film with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts.
Process to form mesostructured films

DOEpatents

Brinker, C.J.; Anderson, M.T.; Ganguli, R.; Lu, Y.F.

1999-01-12

This invention comprises a method to form a family of supported films with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts. 12 figs.
Effect of mechanical alloying synthesis process on the dielectric properties of (Bi{sub 0.5}Na{sub 0.5}){sub 0.94}Ba{sub 0.06}TiO{sub 3} piezoceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghazanfari, Mohammad Reza, E-mail: Ghazanfari.mr@gmail.com; Amini, Rasool; Shams, Seyyedeh Fatemeh

Highlights: • MA samples show higher dielectric permittivity and Curie temperature. • In MA samples, dielectric loss is almost 27% less than conventional ones. • In MA samples, sintering time and temperature are lower than conventional ones. • In MA samples, particle morphology is more homogeneous conventional ones. • In MA samples, crystallite size is smaller conventional ones. - Abstract: In present work, in order to study the effects of synthesis techniques on dielectric properties, the BNBT lead-free piezoceramics with (Bi{sub 0.5}Na{sub 0.5}){sub 0.94}Ba{sub 0.06}TiO{sub 3} stoichiometry (called as BNBT6) were synthesized by mechanical alloying (MA) and conventional mixed oxidesmore » methods. The structural, microstructural, and dielectric properties were carried out by X-ray diffractometer (XRD), scanning electron microscope (SEM), and impedance analyzer LCR meter, respectively. Based on results, the density of MA samples is considerably higher than conventional samples owning to smaller particles size and more uniformity of particle shape of MA samples. Moreover, the dielectric properties of MA samples are comparatively improved in which the dielectric loss of these samples is almost 27% less than conventional ones. Furthermore, MA samples exhibit obviously higher dielectric permittivity and Curie temperature compared to the conventional samples.« less
Effect of fiber content on the thermal conductivity and dielectric constant of hair fiber reinforced epoxy composite

NASA Astrophysics Data System (ADS)

Prasad Nanda, Bishnu; Satapathy, Alok

2018-03-01

This paper reports on the dielectric and thermal properties of hair fibers reinforced epoxy composites. Hair is an important part of human body which also offers protection to the human body. It is also viewed as a biological waste which is responsible for creating environmental pollution due to its low decomposition rate. But at the same time it has unique microstructural, mechanical and thermal properties. In the present work, epoxy composites are made by solution casting method with different proportions of short hair fiber (SHF). Effects of fiber content on the thermal conductivity and dielectric constant of epoxy resin are studied. Thermal conductivities of the composites are obtained using a UnithermTM Model 2022 tester. An HIOKI-3532-50 Hi Tester Elsier Analyzer is used for measuring the capacitance of the epoxy-SHF composite, from which dielectric constant (Dk) of the composite are calculated. A reduction in thermal conductivity of the composite is noticed with the increase in wt. % of fiber. The dielectric constant value of the composites also found to be significantly affected by the fiber content.
Controlling of dielectrical properties of hydroxyapatite by ethylenediamine tetraacetic acid (EDTA) for bone healing applications.

PubMed

Kaygili, Omer; Ates, Tankut; Keser, Serhat; Al-Ghamdi, Ahmed A; Yakuphanoglu, Fahrettin

2014-08-14

The hydroxyapatite (HAp) samples in the presence of various amounts of ethylenediamine tetraacetic acid (EDTA) were prepared by sol-gel method. The effects of EDTA on the crystallinity, phase structure, chemical, micro-structural and dielectric properties of HAp samples were investigated. With the addition of EDTA, the average crystallite size of the HAp samples is gradually decreased from 30 to 22 nm and the crystallinity is in the range of 65-71%. The values of the lattice parameters (a and c) and volume of the unit cell are decreased by stages with the addition of EDTA. The dielectric parameters such as relative permittivity, dielectric loss and relaxation time are affected by the adding of EDTA. The alternating current conductivity of the as-synthesized hydroxyapatites increases with the increasing frequency and obeys the universal power law behavior. The HAp samples exhibit a non-Debye relaxation mechanism. The obtained results that the dielectrical parameters of the HAp sample can be controlled by EDTA. Copyright © 2014 Elsevier B.V. All rights reserved.
Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

NASA Astrophysics Data System (ADS)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.
Contribution of nanointerfaces to colossal permittivity of doped Ba(Ti,Sn)O3 ceramics

NASA Astrophysics Data System (ADS)

V'yunov, Oleg; Reshytko, Borys; Belous, Anatolii; Kovalenko, Leonid

2018-03-01

The microstructure, crystal chemical parameters and electrical-physical properties of samples of barium titanate-based dielectric and semiconductor ceramics were investigated in a wide frequency range. The contributions of different nanointerfaces to the permittivity of samples under investigation have been determined.
Effect of Polymer Matrix on the Structure and Electric Properties of Piezoelectric Lead Zirconatetitanate/Polymer Composites

PubMed Central

Li, Rui; Zhou, Jun; Liu, Hujun; Pei, Jianzhong

2017-01-01

Piezoelectric lead zirconatetitanate (PZT)/polymer composites were prepared by two typical polymer matrixes using the hot-press method. The micromorphology, microstructure, dielectric properties, and piezoelectric properties of the PZT/polymer composites were characterized and investigated. The results showed that when the condition of frequency is 103 Hz, the dielectric and piezoelectric properties of PZT/poly(vinylidene fluoride) were both better than that of PZT/polyvinyl chloride (PVC). When the volume fraction of PZT was 50%, PZT/PVDF prepared by the hot-press method had better comprehensive electric property. PMID:28805730
Dielectric, Piezoelectric and Variable Range Hopping Conductivity Studies of Bi0.5(Na, K)0.5TiO3 Ceramics

NASA Astrophysics Data System (ADS)

Pattipaka, Srinivas; James, A. R.; Dobbidi, Pamu

2018-04-01

We report a detailed study on the structural, microstructural, piezoelectric, dielectric and AC conductivity of Bi0.5(Na1-x K x )0.5TiO3 (BNKT; x = 0, 0.1, 0.2 and 0.3) ceramics fabricated by a conventional solid-state reaction method. XRD and Raman analysis revealed that Bi0.5(Na0.8K0.2)0.5TiO3 and Bi0.5(Na0.7K0.3)0.5TiO3 ceramics exhibit a mixture of rhombohedral and tetragonal structures. The segregation of K at the grain boundary was confirmed by transmission electron microscopy and is related to typical microstructural local compositional mapping analysis. Two transitions, at ˜ 330°C and 150°C, observed from the ɛ' versus T curve in pure BNT are associated with the ferroelectric tetragonal to paraelectric cubic phase (T C) and ferroelectric rhombohedral to ferroelectric tetragonal phase (T d), respectively. Further, the T C and T d shifted towards the lower temperature with a rise in K concentration. Frequency dispersion of T d and T C suggest that BNKT ceramics exhibit a weak relaxor behavior with diffuse phase transition, which is confirmed by Uchino-Nomura criteria and the Vogel-Fulcher law. The AC resistivity ρ ac(T) follows the Mott variable range hopping conduction mechanism. A significant enhancement of dielectric and piezoelectric properties were observed for x = 0.2 system: dielectric constant (ɛ' = 1273), dielectric loss (tanδ = 0.047) at 1 kHz, electromechanical coupling coefficients (k ij : k 33, k t ˜ 60%, k 31 ˜ 62% and k p ˜ 46%), elastic coupling coefficients ( S_{33}D = 6.40 × 10-13 m2/N and S_{33}E = 10.06 × 10-13 m2/N) and piezoelectric constants (d 33 = 64.23 pC/N and g 33 = 5.69 × 10-3 Vm/N).
Dielectric, Piezoelectric and Variable Range Hopping Conductivity Studies of Bi0.5(Na, K)0.5TiO3 Ceramics

NASA Astrophysics Data System (ADS)

Pattipaka, Srinivas; James, A. R.; Dobbidi, Pamu

2018-07-01

We report a detailed study on the structural, microstructural, piezoelectric, dielectric and AC conductivity of Bi0.5(Na1- x K x )0.5TiO3 (BNKT; x = 0, 0.1, 0.2 and 0.3) ceramics fabricated by a conventional solid-state reaction method. XRD and Raman analysis revealed that Bi0.5(Na0.8K0.2)0.5TiO3 and Bi0.5(Na0.7K0.3)0.5TiO3 ceramics exhibit a mixture of rhombohedral and tetragonal structures. The segregation of K at the grain boundary was confirmed by transmission electron microscopy and is related to typical microstructural local compositional mapping analysis. Two transitions, at ˜ 330°C and 150°C, observed from the ɛ' versus T curve in pure BNT are associated with the ferroelectric tetragonal to paraelectric cubic phase ( T C) and ferroelectric rhombohedral to ferroelectric tetragonal phase ( T d), respectively. Further, the T C and T d shifted towards the lower temperature with a rise in K concentration. Frequency dispersion of T d and T C suggest that BNKT ceramics exhibit a weak relaxor behavior with diffuse phase transition, which is confirmed by Uchino-Nomura criteria and the Vogel-Fulcher law. The AC resistivity ρ ac( T) follows the Mott variable range hopping conduction mechanism. A significant enhancement of dielectric and piezoelectric properties were observed for x = 0.2 system: dielectric constant ( ɛ' = 1273), dielectric loss (tan δ = 0.047) at 1 kHz, electromechanical coupling coefficients ( k ij : k 33, k t ˜ 60%, k 31 ˜ 62% and k p ˜ 46%), elastic coupling coefficients ( S_{33}D = 6.40 × 10-13 m2/N and S_{33}E = 10.06 × 10-13 m2/N) and piezoelectric constants ( d 33 = 64.23 pC/N and g 33 = 5.69 × 10-3 Vm/N).
Dielectric properties of A- and B-site doped BaTiO 3: Effect of La and Ga

NASA Astrophysics Data System (ADS)

Gulwade, Devidas; Gopalan, Prakash

2009-06-01

Extremely small amounts of La and Ga doping on the A- and B-site of BaTiO 3, respectively, resulting in a solid solution of the type Ba 1-3xLa 2xTi 1-3yGa 4yO 3 have been investigated. The present work dwells on the influence of the individual dopants, namely La and Ga, on the dielectric properties of BaTiO 3. The compositions have been prepared by solid-state reaction. X-ray diffraction (XRD) reveals the presence of tetragonal (P4/mmm) phase. The XRD data has been analyzed using FULLPROF, a Rietveld refinement package. The microstructure have been studied by orientation imaging microscopy (OIM). The compositions have been characterized by dielectric spectroscopy between room temperature and 250 °C. Further, the nature of phase transition has been studied using high temperature XRD. The resulting compounds exhibit high dielectric constant, enhanced diffuseness and low temperature coefficient of capacitance.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Ctibor, Pavel; Kotlan, Jiri, E-mail: kotlan@ipp.cas.cz; Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Prague 6

Highlights: • Calcium titanate was sprayed by two different plasma spray systems. • Significant improvement of dielectric properties after annealing was observed. • Calcium titanate self-supporting parts can be fabricated by plasma spraying. - Abstract: This paper studies calcium titanate (CaTiO{sub 3}) dielectrics prepared by plasma spray technology. A water stabilized plasma gun (WSP) as well as a widely used gas stabilized plasma gun (GSP) were employed in this study to deposit three sample sets at different spray conditions. Prepared specimens were annealed in air at atmospheric pressure for 2 h at various temperatures from 530 to 1170 °C. X-raymore » diffraction (XRD), Raman spectroscopy and porosity measurements were used for sample characterization. Dielectric spectroscopy was applied to obtain relative permittivity, conductivity and loss factor frequency dependence. Band gap energy was estimated from reflectance measurements. The work is focused on the explanation of changes in microstructure and properties of a plasma sprayed deposit after thermal annealing. Obtained results show significant improvement of dielectric properties after thermal annealing.« less
Low-loss Ca{sub 5-x}Sr{sub x}A{sub 2}TiO{sub 12} [A=Nb,Ta] ceramics: Microwave dielectric properties and vibrational spectroscopic analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bijumon, Pazhoor Varghese; Sebastian, Mailadil Thomas; Dias, Anderson

2005-05-15

Complex perovskite-type Ca{sub 5-x}Sr{sub x}A{sub 2}TiO{sub 12} [A=Nb,Ta] (0{<=}x{<=}5) ceramics were prepared by conventional solid-state ceramic route. The crystal structure, microwave dielectric properties, and vibrational spectroscopic characteristics of these materials are reported. The structure and microstructure were investigated by x-ray diffraction and scanning electron microscopy techniques. The microwave dielectric properties were measured in the 3-5-GHz frequency range by the resonance method. Structural evolutions from orthorhombic to an averaged pseudocubic phase, with associated changes in dielectric properties, were observed as a function of composition. The structure-property relationships in these ceramics were established using Raman and Fourier transform infrared spectroscopic techniques. Ramanmore » analysis showed characteristic bands of ordered perovskite materials, with variation in both intensity and frequency as a function of composition.« less
Poly(vinylidene fluoride)/ CaCu{sub 3}Ti{sub 4}O{sub 12} and La doped CaCu{sub 3}Ti{sub 4}O{sub 12} composites with improved dielectric and mechanical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Anshuman; Jana, Karun Kumar; Maiti, Pralay

2015-10-15

Highlights: • High ϵ′ PVDF/CCTO and La doped CCTO composites prepared by Extrusion. • With addition of ceramic, there is substantial increase in the ϵ′ of matrix PVDF. • Composites exhibit double relaxation behavior. - Abstract: Melt extrusion process has been used to prepare high relative permittivity, ϵ' PVDF–CCTO and PVDF–LaCCTO composites. Phase composition has been studied using powder X-ray diffraction (XRD). Microstructural, dielectric and mechanical properties have also been studied. Young's modulus of PVDF increases with the ceramic reinforcement. Dielectric measurements are made in the frequency range 10{sup −2}–10{sup 6} Hz using two probe Novocontrol impedance analyser (ZG4) frommore » room temp to 120 °C to study the dielectric relaxation. There is a substantial increase in ϵ' of the matrix PVDF on addition of LaCCTO.« less
Effects of La2O3-B2O3-ZnO additions on the low temperature sintering and microwave dielectric properties of (Ca0.61La0.26) TiO3 ceramics

NASA Astrophysics Data System (ADS)

Chen, Y. W.; Li, E. Z.; Niu, N.; Zou, M. Y.; Duan, S. X.; Zhang, S. R.

2017-02-01

The influence of La2O3-B2O3-ZnO (LBZ) additions on the sintering behavior, microstructure, phase composition, and the microwave dielectric properties of (Ca0.61La0.26) TiO3 (CLT) ceramics have been investigated. The results indicate that the LBZ additions could efficiently lower the sintering temperature of the CLT ceramics from 1400°C to 950°C, and excellent microwave properties remain. Small amount of LBZ glass promotes the densification of the CLT ceramics and enhances the microwave dielectric properties. However, excess amount of LBZ glass deteriorates the dielectric properties because of the increasing glass phase. The CLT ceramic with 3 wt. % LBZ additions, sintered at 950°C, exhibit excellent properties: εr= 103.12, Q× f = 8826 GHz(f=3.312 GHz) and τƒ=299.52 ppm/°C.
Effects of rare earth ionic doping on microstructures and electrical properties of CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Renzhong; Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002; Chen, Zhenping, E-mail: xrzbotao@163.com

2015-06-15

Graphical abstract: The dielectric constant decreases monotonically with reduced RE doping ion radius and is more frequency independent compared with that of pure CCTO sample. - Highlights: • The mean grain sizes decrease monotonically with reduced RE doping ionic radius. • Doping gives rise to the monotonic decrease of ϵ{sub r} with reduced RE ionic radius. • The nonlinear coefficient and breakdown field increase with RE ionic doping. • α of all the samples is associated with the potential barrier width rather than Φ{sub b}. - Abstract: Ca{sub 1–x}R{sub x}Cu{sub 3}Ti{sub 4}O{sub 12}(R = La, Nd, Eu, Gd, Er; xmore » = 0 and 0.005) ceramics were prepared by the conventional solid-state method. The influences of rare earth (RE) ion doping on the microstructure, dielectric and electrical properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics were investigated systematically. Single-phase formation is confirmed by XRD analyses. The mean grain size decreases monotonically with reduced RE ion radius. The EDS results reveal that RE ionic doping reduces Cu-rich phase segregation at the grain boundaries (GBs). Doping gives rise to the monotonic decrease of dielectric constant with reduced RE ionic radius but significantly improves stability with frequency. The lower dielectric loss of doped samples is obtained due to the increase of GB resistance. In addition, the nonlinear coefficient and breakdown field increase with RE ionic doping. Both the fine grains and the enhancement of potential barrier at GBs are responsible for the improvement of the nonlinear current–voltage properties in doped CCTO samples.« less
Computational study of textured ferroelectric polycrystals: Dielectric and piezoelectric properties of template-matrix composites

NASA Astrophysics Data System (ADS)

Zhou, Jie E.; Yan, Yongke; Priya, Shashank; Wang, Yu U.

2017-01-01

Quantitative relationships between processing, microstructure, and properties in textured ferroelectric polycrystals and the underlying responsible mechanisms are investigated by phase field modeling and computer simulation. This study focuses on three important aspects of textured ferroelectric ceramics: (i) grain microstructure evolution during templated grain growth processing, (ii) crystallographic texture development as a function of volume fraction and seed size of the templates, and (iii) dielectric and piezoelectric properties of the obtained template-matrix composites of textured polycrystals. Findings on the third aspect are presented here, while an accompanying paper of this work reports findings on the first two aspects. In this paper, the competing effects of crystallographic texture and template seed volume fraction on the dielectric and piezoelectric properties of ferroelectric polycrystals are investigated. The phase field model of ferroelectric composites consisting of template seeds embedded in matrix grains is developed to simulate domain evolution, polarization-electric field (P-E), and strain-electric field (ɛ-E) hysteresis loops. The coercive field, remnant polarization, dielectric permittivity, piezoelectric coefficient, and dissipation factor are studied as a function of grain texture and template seed volume fraction. It is found that, while crystallographic texture significantly improves the polycrystal properties towards those of single crystals, a higher volume fraction of template seeds tends to decrease the electromechanical properties, thus canceling the advantage of ferroelectric polycrystals textured by templated grain growth processing. This competing detrimental effect is shown to arise from the composite effect, where the template phase possesses material properties inferior to the matrix phase, causing mechanical clamping and charge accumulation at inter-phase interfaces between matrix and template inclusions. The computational results are compared with complementary experiments, where good agreement is obtained.
Influence of Lu2O3 on electrical and microstructural properties of CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Xu, Dong; Wang, Biao; Lin, Yuanhua; Jiao, Lei; Yuan, Hongming; Zhao, Guoping; Cheng, Xiaonong

2012-07-01

In this work, the influence of Lu2O3 doped on the dielectric and electrical properties of CaCu3Ti4O12 was reported. Lu2O3-doped CCTO was prepared by a conventional solid state technique using CuO, TiO2, and CaCO3 as starting materials. The samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM); dielectric measurements were measured in the 102 Hz-107 Hz frequency range at room temperature; and the nonlinear behavior of all samples was measured. The doping of Lu2O3 resulted in an increase in the dielectric constant of CCTO, but decreased the stability of the frequency dependence. Increasing concentrations of Lu2O3 resulted in decreasing nonlinear coefficients.

(Ba1- x Bi0.33 x Sr0.67 x )(Ti1- x Bi0.67 x V0.33 x )O3 and (Ba1- x Bi0.5 x Sr0.5 x )(Ti1- x Bi0.5 x Ti0.5 x )O3 solid solutions: phase evolution, microstructure, dielectric properties and impedance analysis

NASA Astrophysics Data System (ADS)

Chen, Xiuli; Li, Xiaoxia; Yan, Xiao; Liu, Gaofeng; Zhou, Huanfu

2018-06-01

Perovskite solid solution ceramics of (Ba1- x Bi0.33 x Sr0.67 x )(Ti1- x Bi0.67 x V0.33 x )O3 and (Ba1- x Bi0.5 x Sr0.5 x )(Ti1- x Bi0.5 x Ti0.5 x )O3 (BBSTBV, BBSTBT, 0.02 ≤ x ≤ 0.2) were prepared by the traditional solid state reaction technique. The phase evolution, microstructure and dielectric properties of BBSTBV and BBSTBT ceramics were researched. X-Ray diffraction results illustrated that both BBSTBV and BBSTBT could form a homogenous solid solution which has a similar structure with BaTiO3. The optimized properties of (Ba0.8Bi0.1Sr0.1)(Ti0.8Bi0.1Ti0.1)O3 ceramics with stable ɛ r ( 1769-2293), small Δ ɛ/ ɛ 25 °C values (± 15%) over a broad temperature range from - 58 to 151 °C and low tan δ ≤ 0.03 from - 11 to 131 °C were obtained. In the high-temperature region, the relaxation and conduction process are attributed to the thermal activation and the oxygen vacancies may be the ionic charge carriers in perovskite ferroelectrics.
Exploring the Room-Temperature Ferromagnetism and Temperature-Dependent Dielectric Properties of Sr/Ni-Doped LaFeO3 Nanoparticles Synthesized by Reverse Micelle Method

NASA Astrophysics Data System (ADS)

Naseem, Swaleha; Khan, Shakeel; Husain, Shahid; Khan, Wasi

2018-03-01

This paper reports the thermal, microstructural, dielectric and magnetic properties of La0.75Sr0.25Fe0.65Ni0.35O3 nanoparticles (NPs) synthesized via reverse micelle technique. The thermogravimetric analysis of as-prepared NPs confirmed a good thermal stability of the sample. Powder x-ray diffraction data analyzed with a Rietveld refinement technique revealed single-phase and orthorhombic distorted perovskite crystal structure of the NPs having Pbnm space group. The transmission electron microscopy images show the crystalline nature and formation of nanostructures with a fairly uniform distribution of particles throughout the sample. Temperature-dependent dielectric properties of the NPs in accordance with the Kramers-Kronig transformation (KKT) model, universal dielectric response model and jump relaxation model have been discussed. Electrode or interface polarization is likely the cause of the observed dielectric behavior. Due to grain boundaries and Schottky barriers of the metallic electrodes of semiconductors, the depletion region is observed, which gives rise to Maxwell-Wagner relaxation and hence high dielectric constants. Magnetic studies revealed the ferromagnetic nature of the prepared NPs upon Sr and Ni doping in LaFeO3 perovskite at room temperature. Therefore, these NPs could be a potential candidate as electrode material in solid oxide fuel cells.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Yeon Hwa; Kang, Min Soo; Chung, Kyung Won

New lanthanum borate (La{sub 2}O{sub 3}-B{sub 2}O{sub 3}) glasses modified with divalent oxides, such as CaO, MgO and ZnO were investigated as potential low temperature dielectrics by understanding compositional dependence of dielectric properties and chemical leaching resistance. Firing behavior, such as densification and crystallization, depended strongly on the glass composition and is found to influence the resultant dielectric performance. Specifically, the dielectric composition of 20ZnO-20La{sub 2}O{sub 3}-60B{sub 2}O{sub 3} glass with 40 wt% Al{sub 2}O{sub 3} as a filler showed distinct enhancements of dielectric properties, i.e., k {approx} 8.3 and Q {approx} 1091 at the resonant frequency of 17.1 GHz,more » as a result of 850 deg. C firing. The result was believed related to earlier densification and unexpected evolvements of ZnAl{sub 2}O{sub 4} and La(BO{sub 2}){sub 3} phases during firing. The Mg-containing glass sample was most stable in strong acid solutions and did not show any significant changes in microstructure even after 300 min exposure. The Ca-containing glass sample was not regarded as a promising candidate for low temperature dielectrics from the observed low quality factor and weak chemical durability.« less
(Ba1-x Bi x )(Ti1-x Ni0.5x Sn0.5x )O3 Solid Solution: Phase Evolution, Microstructure, Dielectric Properties, and Impedance Analysis

NASA Astrophysics Data System (ADS)

Chen, Xiuli; Li, Xiaoxia; Yan, Xiao; Liu, Gaofeng; Zhou, Huanfu

2018-02-01

(Ba1-x Bi x )(Ti1-x Ni0.5x Sn0.5x )O3 (BBTNS, 0.02 ≤ x ≤ 0.1) samples have been synthesized by traditional solid-state reaction technique and their structural transformation and dielectric properties investigated. X-ray diffraction (XRD) analysis revealed that BBTNS could form a homogeneous solid solution, and the transformation from tetragonal to pseudocubic phase occurred at 0.04 ≤ &!nbsp;x ≤ 0.06. Optimized properties with stable ɛ r (˜ 1829 to 1838), small Δɛ/ɛ 25°C values (± 15%) over a broad temperature range from -60°C to 140°C, and low tan Δ (≤ 0.02) from 4°C to 194°C were obtained at x = 0.1. The relaxation and conduction process in the high-temperature region are attributed to thermal activation, and oxygen vacancies may be the ionic charge carriers in perovskite ferroelectrics.
Fluoropolymer Microstructure and Dynamics: Influence of Molecular Orientation Induced by Uniaxial Drawing

NASA Astrophysics Data System (ADS)

Miranda, Daniel; Yin, Chaoqing; Runt, James

Fluorinated semi-crystalline polymer films are attractive for dielectric film applications due to their chemical inertness, heat resistance, and high thermal stability. In the present investigation we explore the influence of orientation induced by uniaxial drawing on the crystalline microstructure and relaxation processes of poly(ethylene-tetrafluoroethylene) (ETFE), in order to ascertain how morphological control can benefit polymer dielectric design. When drawn below or near the Tg, the crystallinity of the drawn films is unchanged, and oriented amorphous structures and crystalline microfibrils form at high draw ratios. This orientation slows segmental relaxation, reflected by an increase in the dynamic Tg, and also delays the transition to the high temperature crystalline form of ETFE. When drawing above the Tg, the films undergo strain-induced crystallization at high draw ratios. For these films an increase in the dynamic Tg is also observed, in addition to a second segmental relaxation process, appearing as a shoulder on the primary process. We propose that this represents a contribution from a rigid amorphous fraction, having slowed chain dynamics. Supported by Office of Naval Research.
Low-loss Z-type barium hexaferrite composites from nanoscale ZnAl2O4 addition for high-frequency applications

NASA Astrophysics Data System (ADS)

Zheng, Zongliang; Feng, Quanyuan; Harris, Vincent G.

2018-05-01

In this study, nanocrystalline ZnAl2O4 (ZA) were introduced to Z-type barium hexaferrite (Co2Z) and the effects of ZA addition upon the crystal-phase composition, microstructure, permeability and permittivity as well as losses characteristics over a wide frequency range of 10 MHz-1 GHz have been systematically investigated. With increasing ZA content (x) from 0 to 15 wt%, the permeability μ' at low frequencies decreased from 12.0 to 4.3, while the permittivity ɛ' was decreased from 27.4 to 10.7. Correspondingly, the frequency stability of permeability and permittivity were improved and the losses were effectively reduced. When x is in the range of 5-10 wt%, the magnetic loss tan δμ is in the order of 10-2 and the dielectric loss tan δɛ is in the order of 10-3 at 300 MHz, which is lower by one order of magnitude compared with that of undoped Co2Z. The modified magnetic and dielectric properties are closely related to the changing phase composition and microstructure.
Dielectric relaxation and electrical conduction mechanism in A2HoSbO6 (A=Ba, Sr, Ca) Double Perovskite Ceramics: An impedance spectroscopic analysis

NASA Astrophysics Data System (ADS)

Halder, Saswata; Dutta, Alo; Sinha, T. P.

2017-03-01

The AC electrical properties of polycrystalline double perovskite oxides A2HoSbO6 (A=Ba, Sr, Ca; AHS) synthesized by solid state reaction technique has been explored by using impedance spectroscopic studies. The Rietveld refinement of the room temperature X-ray diffraction data show that Ba2HoSbO6 (BHS) has cubic phase and Sr2HoSbO6 (SHS) and Ca2HoSbO6 (CHS) crystallize in monoclinic phase. The samples show significant frequency dispersion in their dielectric properties. The polydispersive nature of the relaxation mechanism is explained by the modified Cole-Cole model. The scaling behavior of dielectric loss indicate the temperature independence of the relaxation mechanism. The magnitude of the activation energy indicates that the hopping mechanism is responsible for carrier transport in AHS. The frequency dependent conductivity spectra follow the double power law. Impedance spectroscopic data presented in the Nyquist plot (Z" versus Z‧) are used to identify an equivalent circuit along with to know the grain, grain boundary and interface contributions. The constant phase element (CPE) is used to analyze the experimental response of BHS, SHS and CHS comprehending the contribution of different microstructural features to the conduction process. The temperature dependent electrical conductivity shows a semiconducting behavior.
Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

NASA Astrophysics Data System (ADS)

Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

2015-11-01

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.
Dielectric and varistor properties of rare-earth-doped ZnO and CaCu3Ti4O12 composite ceramics

NASA Astrophysics Data System (ADS)

Lu, Huafei; Lin, Yuanhua; Yuan, Jiancong; Nan, Cewen; Chen, Kexin

2013-02-01

To investigate the multi-functional ceramics with both high permittivity and large nonlinear coefficient, we have prepared rare-earth Tb-and-Co doped ZnO and TiO2-rich CaCu3Ti4O12 (TCCTO) powders by chemical co-precipitation and sol-gel methods respectively, and then obtained the TCCTO/ZnO composite ceramics, sintered at 1100°C for 3 h in air. Analyzing the composite ceramics of the microstructure and phase composition indicated that the composite ceramics were composed of the main phases of ZnO and CaCu3Ti4O12 (CCTO). Our results revealed that the TCCTO/ZnO composite ceramics showed both high dielectric and good nonlinear electrical behaviors. The composite ceramic of TCCTO: ZnO = 0.3 exhibited a high dielectric constant of 210(1 kHz) with a nonlinear coefficient of 11. The dielectric behavior of TCCTO/ZnO composite could be explained by the mixture rule. With the high dielectric permittivity and tunable varistor behaviors, the composite ceramics has a potential application for the higher voltage transportation devices.
Low-Frequency Dielectric Responses of Barium Strontium Titanate Thin Films with Conducting Perovskite LaNiO3 Electrode

NASA Astrophysics Data System (ADS)

Lee, Su-Jae; Moon, Seung-Eon; Ryu, Han-Cheol; Kwak, Min-Hwan; Kim, Young-Tae

2002-07-01

Highly (h00)-oriented (Ba,Sr)TiO3 [BST] thin films were deposited by pulsed laser depositi on on the perovskite LaNiO3 metallic oxide layer as a bottom electrode. The LaNiO3 films were deposited on SiO2/Si substrates by the rf-magnetron sputtering method. The crystal line phases of the BST film were characterized by X-ray θ-2θ, ω-rocking curve and Φ-scan diffraction measurements. The surface microstructure observed by scanning electron mi croscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxations in the measured frequency region. The origins of these low-frequency dielectric relaxations are attributed to ionized space charge carriers such as the oxygen vacancies and defects in the BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We also studied the capacitance-voltage characteristics of BST films.
Doping effect in layer structured SrBi2Nb2O9 ferroelectrics

NASA Astrophysics Data System (ADS)

Wu, Yun; Forbess, Mike J.; Seraji, Seana; Limmer, Steven J.; Chou, Tammy P.; Nguyen, Carolyn; Cao, Guozhong

2001-11-01

This article reports a systematic study of doping effects on the crystal structure, microstructure, dielectric, and electrical properties of layer-structured strontium bismuth niobate, SrBi2Nb2O9 (SBN), ferroelectrics. Substitution in both the A site (Sr2+ by Ca2+ and Ba2+) and B site (Nb5+ by V5+) up to 30 at % were studied. It was found that crystal lattice constant, dielectric, and electrical properties of SBN ferroelectrics varied appreciably with the type and amount of dopants. The relationships among the ionic radii, structural constraint imposed by [Bi2O2]2+ interlayers, and properties were discussed.
Phase segregation and dielectric, ferroelectric, and piezoelectric properties of MgO-doped NBT-BT lead-free ferroelecric ceramics

NASA Astrophysics Data System (ADS)

Liu, Gang; Wang, Ziyang; Zhang, Leiyang; Shi, Wenjing; Jing, Jiayi; Chen, Yi; Liu, Hongbo; Yan, Yan

2018-03-01

MgO doped NBT-BT ceramics were prepared by the conventional electroceramic processing. The effects of MgO on the phase, microstructures and electrical properties of NBT-BT ceramics were systematically investigated. When doping content is more than 1%, a second phase appeared, which has great effect on dielectric, ferroelectric, and piezoelectric properties, such as the T F-R peak weakened, moved to the higher temperature, and eventually disappeared. When the doping content is above 1.5%, the ceramic samples show a strong relaxation. The detailed analysis and discussion can be found within this study.
An advanced plasmonic cermet solar absorber for high temperature solar energy conversion applications

NASA Astrophysics Data System (ADS)

Bilokur, M.; Gentle, A.; Arnold, M.; Cortie, M.; Smith, G.

2017-08-01

Cermet coatings based on nanoparticles of Au or Ag in a stable dielectric matrix provide a combination of spectral-selectivity and microstructural stability at elevated temperatures. The nanoparticles provide an absorption peak due to their localized surface plasmon resonance and the dielectric matrix provides red-shifting and intrinsic absorption from defects. The matrix and two separated cermet layers combined add mechanical support, greater thermal stability and extra absorptance. The coatings may be prepared by magnetron sputtering. They have solar absorptance ranging between 91% and 97% with low thermal emittance making them suitable for application in solar thermal conversion installations.
Electrohydrodynamic fibrillation governed enhanced thermal transport in dielectric colloids under a field stimulus.

PubMed

Dhar, Purbarun; Maganti, Lakshmi Sirisha; Harikrishnan, A R

2018-05-30

Electrorheological (ER) fluids are known to exhibit enhanced viscous effects under an electric field stimulus. The present article reports the hitherto unreported phenomenon of greatly enhanced thermal conductivity in such electro-active colloidal dispersions in the presence of an externally applied electric field. Typical ER fluids are synthesized employing dielectric fluids and nanoparticles and experiments are performed employing an in-house designed setup. Greatly augmented thermal conductivity under a field's influence was observed. Enhanced thermal conduction along the fibril structures under the field effect is theorized as the crux of the mechanism. The formation of fibril structures has also been experimentally verified employing microscopy. Based on classical models for ER fluids, a mathematical formalism has been developed to predict the propensity of chain formation and statistically feasible chain dynamics at given Mason numbers. Further, a thermal resistance network model is employed to computationally predict the enhanced thermal conduction across the fibrillary colloid microstructure. Good agreement between the mathematical model and the experimental observations is achieved. The domineering role of thermal conductivity over relative permittivity has been shown by proposing a modified Hashin-Shtrikman (HS) formalism. The findings have implications towards better physical understanding and design of ER fluids from both 'smart' viscoelastic as well as thermally active materials points of view.
Space charge effects on the dielectric response of polymer nanocomposites

NASA Astrophysics Data System (ADS)

Shen, Zhong-Hui; Wang, Jian-Jun; Zhang, Xin; Lin, Yuanhua; Nan, Ce-Wen; Chen, Long-Qing; Shen, Yang

2017-08-01

Adding high-κ ceramic nanoparticles into polymers is a general strategy to improve the performances in energy storage. Classic effective medium theories may fail to predict the effective permittivity in polymer nanocomposites wherein the space charge effects are important. In this work, a computational model is developed to understand the space charge effects on the frequency-dependent dielectric properties including the real permittivity and the loss for polymer nanocomposites with both randomly distributed and aggregated nanoparticle fillers. It is found that the real permittivity of the SrTiO3/polyethylene (12% SrTiO3 in volume fraction) nanocomposite can be increased to as high as 60 when there is nanoparticle aggregation and the ion concentration in the bulk polymer is around 1016 cm-3. This model can be employed to quantitatively predict the frequency-dependent dielectric properties for polymer nanocomposites with arbitrary microstructures.
Microstructural, optical and electrical transport properties of Cd-doped SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Ahmad, Naseem; Khan, Shakeel; Mohsin Nizam Ansari, Mohd

2018-03-01

We have successfully investigated the structural, optical and dielectric properties of Cd assimilated SnO2 nanoparticles synthesized via very convenient precipitation route. The structural properties were studied by x-ray diffraction method (XRD) and Fourier Transform Infrared (FTIR) Spectroscopy. As-synthesized samples in the form of powder were examined for its morphology and average particle size by Transmission electron microscopy (TEM). The optical properties were studied by diffuse reflectance spectroscopy. Dielectric properties such that complex dielectric constant and ac conductivity were investigated by LCR meter. Average crystallite size calculated by XRD and average particle size obtained from TEM were found to be consistent and below 50 nm for all samples. The optical band gap of as-synthesized powder samples from absorption study was found in the range of 3.76 to 3.97 eV. The grain boundary parameters such that Rgb, Cgb and τ were evaluated using impedance spectroscopy.
Effect of Sm on dielectric, ferroelectric and piezoelectric properties of BPTNZ system

NASA Astrophysics Data System (ADS)

Kumar, Parveen; Juneja, J. K.; Prakash, Chandra; Raina, K. K.; Singh, Sangeeta

2013-10-01

Study on structural, dielectric and ferroelectric properties of Sm substituted BPTNZ system with compositional formula Ba0.80-xSmxPb0.20Zr0.10Ti0.90O3+0.5% Nb2O5 by weight, (x=0 to 0.01 in the steps of 0.0025) was done. Conventional solid state method was adopted for the synthesis of the samples. The single phase was confirmed by X-ray diffraction (XRD) analysis. Scanning electron microscopy was done for microstructural analysis. The dielectric properties were measured as a function of temperature and frequency. Ferroelectric P-E loops were recorded for all the samples at room temperature. Piezoelectric parameters such as ‘d33’ and electromechanical coupling coefficient ‘kp’ were also measured at room temperature for all the samples. The relationship between properties and structure of the prepared ceramics was established and results are discussed here.
Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Deng, Jianming; Sun, Xiaojun; Liu, Saisai; Liu, Laijun; Yan, Tianxiang; Fang, Liang; Elouadi, Brahim

2016-04-01

CaCu3Ti4-xYxO12 (0≤x≤0.12) ceramics were fabricated with conventional solid-state reaction method. Phase structure and microstructure of prepared ceramics were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The impedance and modulus tests both suggested the existence of two different relaxation behavior, which were attributed to bulk and grain boundary response. In addition, the conductivity and dielectric permittivity showed a step-like behavior under 405K. Meanwhile, frequency independence of dc conduction became dominant when above 405K. In CCTO ceramic, rare earth element Y3+ ions as an acceptor were used to substitute Ti sites, decreasing the concentration of oxygen vacancy around grain-electrode and grain boundary. The reason to the reduction of dielectric behavior in low frequencies range was associated with the Y doping in CCTO ceramic.
Observation of conducting filament growth in nanoscale resistive memories

NASA Astrophysics Data System (ADS)

Yang, Yuchao; Gao, Peng; Gaba, Siddharth; Chang, Ting; Pan, Xiaoqing; Lu, Wei

2012-03-01

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.
Local piezoelectric behavior in PZT-based thin films for ultrasound transducers

NASA Astrophysics Data System (ADS)

Griggio, Flavio

Piezoelectric microelectromechanical systems (MEMS) are currently used in inkjet printers and precision resonators; numerous additional applications are being investigated for sensors, low-voltage actuators, and transducers. This work was aimed at improving piezoelectric MEMS by taking two approaches: 1) identifying factors affecting the piezoelectric response of ferroelectric thin films and 2) demonstrating integration of these films into a high frequency array transducer. It was found that there are several key factors influencing the piezoelectric response of thin films for a given material composition. First, large grain size improves the piezoelectric response. This was demonstrated using chemical solution deposited lead nickel niobate -- lead zirconate titanate (0.3)Pb(Ni 0.33Nb0.67)O3 - (0.7)Pb(Zr0.45Ti 0.55O3), (PNN-PZT) ferroelectric thin films. It was shown that this composition allows greater microstructural control than does PZT. Dielectric permittivities ranging from 1350 to 1520 and a transverse piezoelectric coefficient e31,f as high as -- 9.7 C/m 2 were observed for films of about 0.25 mum in thickness. The permittivity and piezoelectric response as well as extrinsic contributions to the dielectric constant increased by 14 and 12 % respectively for samples with grain sizes ranging from 110 to 270 nm. A second factor influencing the piezoelectric response is film composition with respect to the morphotropic phase boundary (MPB). The composition dependence of the dielectric and piezoelectric nonlinearities was characterized in epitaxially grown (0.3)Pb(Ni0.33Nb0.67)O3-(0.7)Pb(Zr xTi1-xO3) thin films deposited on SrTiO 3 to minimize the influence of large-angle grain boundaries. Tetragonal, MPB and rhombohedral films were prepared by changing the Zr/Ti ratio. The largest dielectric and piezoelectric nonlinearities were observed for the rhombohedral sample; this resulted from a higher domain wall mobility due to a smaller ferroelectric distortion and superior crystal quality. Thirdly, changes in the mechanical boundary conditions experienced by a ferroelectric thin film were found to influence both the properties and the length scale for correlated motion of domain walls. Microfabrication was employed to release the PZT films from the Si substrate. Nonlinear piezoelectric maps, by band excitation piezoforce microscopy, showed formation of clusters of higher nonlinear activities of similar size for clamped PZT films with different microstructures. However PZT films that had been released from the Si substrate showed a distinct increase in the correlation length associated with coupled domain wall motion, suggesting that the local mechanical boundary conditions, more than microstructure or composition govern the domain wall dynamics. Release of both the local and the global stress states in films produced dielectric nonlinearities comparable to those of bulk ceramics. The second research direction was targeted at demonstrating the functionality of a one dimensional transducer array. A diaphragm geometry was used for the transducer arrays in order to benefit from the unimorph-type displacement of the PZT-SiO2 layers. For this purpose, the PZT and remaining films in the stack were patterned using reactive ion etching and partially released from the underlying silicon substrate by XeF2 etching from the top. Admittance measurements on the fabricated structures showed resonance frequencies at ˜40 MHz for a 80 mum diameter-wide diaphragms with a PZT thickness of 1.74 mum. In-water transmit and receive functionalities were demonstrated. A bandwidth on receive of 80 % centered at 40 MHz was determined during pitch-mode tests.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

PubMed

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.
Microwave-Assisted Synthesis of High Dielectric Constant CaCu3Ti4O12 from Sol-Gel Precursor

NASA Astrophysics Data System (ADS)

Ouyang, Xin; Cao, Peng; Huang, Saifang; Zhang, Weijun; Huang, Zhaohui; Gao, Wei

2015-07-01

CaCu3Ti4O12 (CCTO) powders derived from sol-gel precursors were calcined and sintered via microwave radiation. The obtained CCTO powders were compared with that obtained via a conventional heating method. For microwave heating, 89.1 wt.% CCTO was achieved from the sol-gel precursor, after only 17 min at 950°C. In contrast, the conventional calcination method required 3 h to generate 87.6 wt.% CCTO content at 1100°C. In addition, the CCTO powders prepared through 17 min of microwave calcination exhibited a small particle size distribution of D50 = 3.826 μm. It was found that a lengthy hold time of 1 h by microwave sintering is required to obtain a high dielectric constant (3.14 × 103 at 102 Hz) and a reasonably low dielectric loss (0.161) in the sintered CCTO ceramic. Based upon the distinct microstructures, the dielectric responses of the CCTO samples sintered by different methods are attributed to space charge polarization and internal barrier layer capacitor mechanism.
Extrinsic contributions to the dielectric response in sintered BaTiO3 nanostructures in paraelectric and ferroelectric regimes

NASA Astrophysics Data System (ADS)

Jaffari, G. Hassnain; Rehman, Atiq ur; Iqbal, Asad M.; Awan, M. S.; Saleemi, Mohsin

2017-11-01

Post sintering studies of BaTiO3 (BTO) nanoparticles are presented in detail. Bulk nanostructures were prepared via three different compaction processes, namely, uniaxial cold pressing (UCP), Cold Isostatic Pressing (CIP) and Spark Plasma Sintering (SPS). Effect of compaction technique on microstructures have been investigated and correlated with electrical response for each sample. In addition to the transport properties, temperature and frequency dependent dielectric response of variously sintered samples and bulk counterpart was recorded. Several aspects have been identified that are essential to be taken into account in order to completely understand physical processes. Drastically distinct features were observed in paraelectric (PE) regime well above ferroelectric (FE)-PE transition temperature. These features include intra grain conduction with a reduction in the magnitude of PE to FE peak dielectric constant magnitude. Role of strain, grain boundary conduction associated with observation of Maxwell Wagner relaxation and hopping conduction in dielectric and ferroelectric response have been observed and discussed. Densification with presence of oxygen vacancies, significantly enhances conductivity associated with the hopping of the carriers, in turn deteriorated ferroelectric response.
Effects of Secondary Phases on the High-Performance Colossal Permittivity in Titanium Dioxide Ceramics.

PubMed

Zhao, Chunlin; Wu, Jiagang

2018-01-31

The intensive demands of microelectronics and energy-storage applications are driving the increasing investigations on the colossal permittivity (CP) materials. In this study, we designed a new system of Dy and Nb co-doped TiO 2 ceramics [(Dy 0.5 Nb 0.5 ) x Ti 1-x O 2 ] with the formation of secondary phases, and then the enhancement of overall dielectric properties (ε r ∼ 5.0-6.5 × 10 4 and tan δ < 8%) was realized in the broad composition range of 0.5 ≤ x ≤ 5%. More importantly, effects of secondary phases on microstructure, dielectric properties, and stability were explored from the views of defect-dipoles and internal barrier layer capacitance (IBLC) effect. According to the defect-dipoles theory, the CP should mainly originate from Nb 5+ , and the Dy 3+ largely contributes to the decreased dielectric loss. Both CP and low dielectric loss were obtained for co-doping with Dy 3+ and Nb 5+ . Besides, the Dy enrichment induced the formation of secondary phases, which were regarded as the low loss unit dispersed into the ceramic matrix, and largely facilitate the decreased dielectric loss. In particular, the analysis of temperature-dependent complex impedance spectra indicated that a stronger IBLC effect caused by the increased grain boundary resistance can also contribute to the optimized CP and low dielectric loss under appropriate contents of secondary phases.
Grain size effect on the giant dielectric constant of CaCu3Ti4O12 nanoceramics prepared by mechanosynthesis and spark plasma sintering

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.; Yamada, Koji

2014-04-01

In the present work, CaCu3Ti4O12 (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ˜200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2-3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed in CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 103, 2.4 × 104, and 3.2 × 104 for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 104. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.
Nonlinear electroelastic deformations of dielectric elastomer composites: II - Non-Gaussian elastic dielectrics

NASA Astrophysics Data System (ADS)

Lefèvre, Victor; Lopez-Pamies, Oscar

2017-02-01

This paper presents an analytical framework to construct approximate homogenization solutions for the macroscopic elastic dielectric response - under finite deformations and finite electric fields - of dielectric elastomer composites with two-phase isotropic particulate microstructures. The central idea consists in employing the homogenization solution derived in Part I of this work for ideal elastic dielectric composites within the context of a nonlinear comparison medium method - this is derived as an extension of the comparison medium method of Lopez-Pamies et al. (2013) in nonlinear elastostatics to the coupled realm of nonlinear electroelastostatics - to generate in turn a corresponding solution for composite materials with non-ideal elastic dielectric constituents. Complementary to this analytical framework, a hybrid finite-element formulation to construct homogenization solutions numerically (in three dimensions) is also presented. The proposed analytical framework is utilized to work out a general approximate homogenization solution for non-Gaussian dielectric elastomers filled with nonlinear elastic dielectric particles that may exhibit polarization saturation. The solution applies to arbitrary (non-percolative) isotropic distributions of filler particles. By construction, it is exact in the limit of small deformations and moderate electric fields. For finite deformations and finite electric fields, its accuracy is demonstrated by means of direct comparisons with finite-element solutions. Aimed at gaining physical insight into the extreme enhancement in electrostriction properties displayed by emerging dielectric elastomer composites, various cases wherein the filler particles are of poly- and mono-disperse sizes and exhibit different types of elastic dielectric behavior are discussed in detail. Contrary to an initial conjecture in the literature, it is found (inter alia) that the isotropic addition of a small volume fraction of stiff (semi-)conducting/high-permittivity particles to dielectric elastomers does not lead to the extreme electrostriction enhancements observed in experiments. It is posited that such extreme enhancements are the manifestation of interphasial phenomena.
Effects of BiAlO{sub 3}-doping on dielectric and ferroelectric properties of 0.93Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–0.07BaTiO{sub 3} lead-free ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jian; Chen, Xiao-ming, E-mail: xmchen-snnu@163.com; Zhao, Xu-mei

2015-07-15

Highlights: • BiAlO{sub 3}-doped BNT-based ceramics were synthesized via a conventional solid state reaction method. • T% values are 56%, 32%, 37%, and 37% for the ceramics with x = 0, 0.01, 0.02 and 0.06, respectively. • The mean grain sizes of the ceramics with x = 0, 0.01, 0.02 and 0.06 are about 1.1, 0.9, 0.8 and 0.7 μm, respectively. • Dielectric anomalies in the ϵ{sub r}–T curves are close related to the BiAlO{sub 3} amounts. • The ceramic with x = 0.01 shows the P{sub m} of 32.5 μC/cm{sup 2}, P{sub r} of 24.1 μC/cm{sup 2}, E{sub c}more » of 20.0 kV/cm and d{sub 33} of 166 pC/N. - Abstract: (1 − x)(0.93Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–0.07BaTiO{sub 3})–xBiAlO{sub 3} (BNBT-xBA, x = 0, 0.01, 0.02, 0.06) lead-free ceramics were synthesized via a conventional solid state reaction method. Crystallite structure, microstructure, dielectric and ferroelectric properties of the BNBT–xBA ceramics were studied in detail. X-ray diffraction results show that all ceramics exhibit typical diffraction peaks of ABO{sub 3} perovskite structure. Scanning electron microscope images show that all samples have fine microstructures. Both Curie temperature and maximum dielectric constant vary with the change in the BiAlO{sub 3} amounts. The values of hysteresis loop squareness were calculated to be 1.26, 0.81, 0.51 and 0.36 for the ceramics with x = 0, 0.01, 0.02 and 0.06, respectively, indicating a decreased switching behavior of polarization. The changes in dielectric and ferroelectric properties of the ceramics are also discussed.« less
The preparation and characterization of optical thin films produced by ion-assisted deposition

NASA Astrophysics Data System (ADS)

Martin, P. J.; Netterfield, R. P.; Sainty, W. G.; Pacey, C. G.

1984-06-01

Ion-based deposition techniques have been successfully used to deposit compound films suitable for photothermal applications, as well as dielectric films with stable and reproducible optical properties. Thus, thin films of TiN, a-Si:H, and PbS have been obtained by ion-assisted deposition for photothermal solar-selective elements and similarly prepared dielectric layers of ZrO2, SiO2, and Al2O3 have been used as protective coatings on Ag and Al mirrors. It is shown that the technique of ion-assisted deposition affords control over the film density, microstructure, adhesion, composition, and optical properties. Details of the process and film properties are discussed.
Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

NASA Astrophysics Data System (ADS)

Xue, Renzhong; Liu, Dewei; Chen, Zhenping; Dai, Haiyang; Chen, Jing; Zhao, Gaoyang

2015-04-01

In this work, (1 - x)CaCu3Ti4O12- xSrTiO3 [(1 - x)CCTO/ xST, x = 0% to 2%] ceramic samples were prepared by the solid-state reaction method. The dielectric and electrical properties of CaCu3Ti4O12 (CCTO) and CaCu3Ti4O12/SrTiO3 (CCTO/ST) ceramics were investigated. The results show that a small amount of Sr2+ can enter the lattice of CCTO. The mean grain size of the ceramic samples increased greatly for x = 0.5% and then decreased for x = 0.75% to 2%. ST addition and Sr2+ preferential occupancy in CCTO grains should be responsible for the change of the microstructure. Interestingly, the dielectric constant ( ɛ) of the 0.5% ST-added sample increased significantly while the dielectric loss (tan δ) remained low. With further increase of the ST content, the ɛ and tan δ values of the CCTO ceramics decreased monotonically while the nonlinear current-voltage properties were significantly enhanced. The change in the potential barrier height is thought to be the main cause for the opposite behaviors in the dielectric properties and nonohmic characteristics.
Dielectric Spectroscopy Analysis of Aged EVOH films with Application to Deterioration of Food Packaging Materials

NASA Astrophysics Data System (ADS)

Hoeller, Timothy

2007-06-01

Samples of EVOH films from compositions of 29 - 44 mol% ethylene content were exposed to thermal aging with and without light exposure. The results of Dielectric Spectroscopy on select samples showed Cole-Cole plots of skewed dielectric constant indicating multiple distributions of dipole relaxation times. The onset for decreases in dielectric response occurs earlier in samples exposed to elevated temperature under light exposure. Lower permittivity is exhibited in samples of higher ethylene content. Results from heat exposed samples are presented. Colorimetric analysis indicates only a slight film yellowing in one case. Raman spectroscopy on untreated films discerns changes in the C-C-O stretch associated with the alcohol. The effects of aging on microstructure may cause hindrance of molecular motion from moisture desorption. Slight material degradation occurs from film hardening presumably due to crosslinking. An electrical circuit model of the conduction processes associated with the EVOH films is presented. Dielectric analysis shows promise for monitoring material changes related to deterioration. We are also using these methods to understand Fluorescence Imaging which has been recently released for paper and plastic materials analysis. Future work may include refinement of these techniques for identification of changes in material properties correlated to packaging material barrier resistance.
Effects of crystallization on structural and dielectric properties of thin amorphous films of (1 - x)BaTiO3-xSrTiO3 (x=0-0.5, 1.0)

NASA Astrophysics Data System (ADS)

Kawano, H.; Morii, K.; Nakayama, Y.

1993-05-01

The possibilities for fabricating solid solutions of (Ba1-x,Srx)TiO3 (x≤0.5,1.0) by crystallization of amorphous films and for improving their dielectric properties by adjusting the Sr content were investigated. Thin amorphous films were prepared from powder targets consisting of mixtures of BaTiO3 and SrTiO3 by sputtering with a neutralized Ar-ion beam. The amorphous films crystallized into (Ba1-x, Srx)TiO3 solid solutions with a cubic perovskite-type structure after annealing in air at 923 K for more than 1 h. The Debye-type dielectric relaxation was observed for the amorphous films, whereas the crystallized films showed paraelectric behavior. The relative dielectric constants were of the order of 20 for the amorphous samples, but increased greatly after crystallization to about 60-200, depending on the composition; a larger increase in the dielectric constant was observed in the higher Sr content films, in the range x≤0.5, which could be correlated with an increase in the grain size of the crystallites. The crystallization processes responsible for the difference in the grain size are discussed based on the microstructural observations.
The phase compositions and microwave dielectric properties of Li2Zn(Ti1-xSnx)3O8 ceramics

NASA Astrophysics Data System (ADS)

Lu, Xuepeng; Hu, Jie; Chen, Haoyuan; Xu, Wensheng; Li, Shuai

2017-08-01

The Li2Zn(Ti1-xSnx)3O8 (0.02≤x≤0.20) ceramics were prepared by the conventional solid-state ceramic route. The sintering behavior, phase compositions, microstructures and microwave dielectric properties of Li2Zn(Ti1-xSnx)3O8 ceramics were thoroughly investigated. The XRD patterns of Li2Zn(Ti1-xSnx)3O8 ceramics exhibited a single spinel as the main phase in the x value range of 0.02-0.08. The dielectric constants decreased linearly with increasing the substitution of Sn, which was mainly controlled by dielectric polarizabilities and secondary phase. The variation of Q×f values was dependent on average grain sizes and secondary phase. The τf values of Li2Zn(Ti1-xSnx)3O8 ceramics became more negative with higher substitution of Sn, which was related to the variations of their cell volumes. Typically, the Li2Zn(Ti0.92Sn0.08)3O8 ceramic sintered at 1075 °C for 4h exhibited good microwave dielectric properties: ɛr= 24.4, Q×f=89300 GHz, τf= -16.0 ppm/°C.
Low dielectric response in enzyme active site

PubMed Central

Mertz, Edward L.; Krishtalik, Lev I.

2000-01-01

The kinetics of charge transfer depend crucially on the dielectric reorganization of the medium. In enzymatic reactions that involve charge transfer, atomic dielectric response of the active site and of its surroundings determines the efficiency of the protein as a catalyst. We report direct spectroscopic measurements of the reorganization energy associated with the dielectric response in the active site of α-chymotrypsin. A chromophoric inhibitor of the enzyme is used as a spectroscopic probe. We find that water strongly affects the dielectric reorganization in the active site of the enzyme in solution. The reorganization energy of the protein matrix in the vicinity of the active site is similar to that of low-polarity solvents. Surprisingly, water exhibits an anomalously high dielectric response that cannot be described in terms of the dielectric continuum theory. As a result, sequestering the active site from the aqueous environment inside low-dielectric enzyme body dramatically reduces the dielectric reorganization. This reduction is particularly important for controlling the rate of enzymatic reactions. PMID:10681440
High calcination of ferroelectric BaTiO₃ doped Fe nanoceramics prepared by a solid-state sintering method.

PubMed

Samuvel, K; Ramachandran, K

2015-07-05

This study examined the effects of the combination of starting materials on the properties of solid-state reacted BaTiO3 using two different types of BaCO3 and TiO2. In addition, the effect of mechanochemical activation by high energy milling and the Ba/Ti molar ratio on the reaction temperature, particle size and tetragonality were investigated. The TiO2 phase and size plays a major role in increasing the reaction temperature and particle size. With the optimum selection of starting materials and processing conditions, BaTiO3 with a particle size <200 nm (Scherrer's formula) and a tetragonality c/a of approximately 1.007 was obtained. Broadband dielectric spectroscopy is applied to investigate the electrical properties of disordered perovskite-like ceramics in a wide temperature range. From the X-ray diffraction analysis it was found that the newly obtained BaTi0.5Fe0.5O3 ceramics consist of two chemically different phases. The electric modulus M∗ formalism used in the analysis enabled us to distinguish and separate the relaxation processes, dominated by marked conductivity in the ε∗(ω) representation. Interfacial effects on the dielectric properties of the samples have been understood by Cole-Cole plots in complex impedance and modulus formalism. Modulus formalism has identified the effects of both grain and grain boundary microstructure on the dielectric properties, particularly in solid state routed samples. Copyright © 2015 Elsevier B.V. All rights reserved.
High calcination of ferroelectric BaTiO3 doped Fe nanoceramics prepared by a solid-state sintering method

NASA Astrophysics Data System (ADS)

Samuvel, K.; Ramachandran, K.

2015-07-01

This study examined the effects of the combination of starting materials on the properties of solid-state reacted BaTiO3 using two different types of BaCO3 and TiO2. In addition, the effect of mechanochemical activation by high energy milling and the Ba/Ti molar ratio on the reaction temperature, particle size and tetragonality were investigated. The TiO2 phase and size plays a major role in increasing the reaction temperature and particle size. With the optimum selection of starting materials and processing conditions, BaTiO3 with a particle size <200 nm (Scherrer's formula) and a tetragonality c/a of approximately 1.007 was obtained. Broadband dielectric spectroscopy is applied to investigate the electrical properties of disordered perovskite-like ceramics in a wide temperature range. From the X-ray diffraction analysis it was found that the newly obtained BaTi0.5Fe0.5O3 ceramics consist of two chemically different phases. The electric modulus M∗ formalism used in the analysis enabled us to distinguish and separate the relaxation processes, dominated by marked conductivity in the ε∗(ω) representation. Interfacial effects on the dielectric properties of the samples have been understood by Cole-Cole plots in complex impedance and modulus formalism. Modulus formalism has identified the effects of both grain and grain boundary microstructure on the dielectric properties, particularly in solid state routed samples.
Effect of Zn doping on structural, magnetic and dielectric properties of LaFeO{sub 3} synthesized through sol–gel auto-combustion process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Irshad; Husain, Shahid, E-mail: s.husain@lycos.com; Khan, Wasi

2013-11-15

Graphical abstract: - Highlights: • We have synthesized the samples of LaFe{sub 1−x}Zn{sub x}O{sub 3} (0 ≤ x ≤ 0.3) using sol–gel auto-combustion process. • The doping of Zn{sup 2+} hugely enhances the dielectric constant (ε′) and it shows a colossal value. • The parent compound LaFeO{sub 3} does not show any relaxation peak, but the substitution of Zn at Fe{sup 3+} site brings the relaxation in the system. • The system shows a peak behavior thereby giving the Debye like dipolar relaxation response. - Abstract: We have studied the structural and dielectric properties of nano-crystalline LaFe{sub 1−x}Zn{sub x}O{sub 3}more » (0 ≤ x ≤ 0.3) pervoskite samples synthesized through sol–gel auto-combustion technique. X-ray diffraction and FTIR spectroscopy are used to confirm the single phase characteristics. Microstructural features are investigated using scanning electron microscope and compositional analysis is performed through energy dispersive spectroscopy. The average grain sizes, calculated from the Scherrer formula, lie in the range below 30 nm. The hysteresis (M-H) curves display a weak magnetic order and a shift in the hysteresis loops. Dielectric response has been discussed, in the framework of “universal dielectric response” model. The value of dielectric constant (ε′) increases drastically on Zn doping. The dielectric loss factor (ε″) shows Debye like dipolar relaxation behavior. The observed peaks in loss factor (ε″) are attributed to the fact that a strong correlation between the conduction mechanism and the dielectric behavior exists in ferrites.« less
Giant dielectric response and low dielectric loss in Al{sub 2}O{sub 3} grafted CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajabtabar-Darvishi, A.; Center for Surface and Nanoanalytics; Bayati, R., E-mail: reza.bayati@intel.com, E-mail: mbayati@ncsu.edu, E-mail: wdfei@hit.edu.cn

2015-03-07

This study sheds light on the effect of alumina on dielectric constant and dielectric loss of novel CaCu{sub 3}Ti{sub 4}O{sub 12} composite ceramics. Alumina, at several concentrations, was deposited on the surface of CaCu{sub 3}Ti{sub 4}O{sub 12} particles via sol-gel technique. The dielectric constant significantly increased for all frequencies and the dielectric loss substantially decreased for low and intermediate frequencies. These observations were attributed to the change in characteristics of grains and grain boundaries. It was found that the insulating properties of the grain boundaries are improved following the addition of Al{sub 2}O{sub 3}. The relative density of CaCu{sub 3}Ti{submore » 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics decreased compared to the pure CaCu{sub 3}Ti{sub 4}O{sub 12} and the grain size was greatly changed with the alumina content affecting the dielectric properties. With the addition of alumina into CaCu{sub 3}Ti{sub 4}O{sub 12}, tighter interfaces formed. The 6%- and 10%-alumina ceramics showed the minimum dielectric loss and the maximum dielectric constant, respectively. Both the dielectric constant and loss tangent decreased in the 20%-alumina ceramic due to the formation of CuO secondary phase. It was revealed that Al serves as an electron acceptor decreasing the electron concentration, if Al{sup 3+} ions substitute for Ti{sup 4+} ions, and as an electron donor increasing the electron concentration, if Al{sup 3+} ions substitute for Ca{sup 2+} ions. We established a processing-microstructure-properties paradigm which opens new avenues for novel applications of CaCu{sub 3}Ti{sub 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics.« less
Effects of Heat-Treatment Temperature on the Microstructure, Electrical and Dielectric Properties of M-Type Hexaferrites

NASA Astrophysics Data System (ADS)

Ali, Ihsan; Islam, M. U.; Awan, M. S.; Ahmad, Mukhtar

2014-02-01

M-type hexaferrite BaCr x Ga x Fe12-2 x O19 ( x = 0.2) powders have been synthesized by use of a sol-gel autocombustion method. The powder samples were pressed into 12-mm-diameter pellets by cold isostatic pressing at 2000 bar then heat treated at 700°C, 800°C, 900°C, and 1000°C. X-ray diffraction patterns of the powder sample heat treated at 1000°C confirmed formation of the pure M-type hexaferrite phase. The electrical resistivity at room temperature was significantly enhanced by increasing the temperature of heat treatment and approached 5.84 × 109 Ω cm for the sample heat treated at 1000°C. Dielectric constant and dielectric loss tangent decreased whereas conductivity increased with increasing applied field frequency in the range 1 MHz-3 GHz. The dielectric properties and ac conductivity were explained on the basis of space charge polarization in accordance with the Maxwell-Wagner two-layer model and Koop's phenomenological theory. The single-phase synthesized materials may be useful for high-frequency applications, for example reduction of eddy current losses and radar absorbing waves.
Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr ,Ti)O3 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Tang, X. G.; Tian, H. Y.; Wang, J.; Wong, K. H.; Chan, H. L. W.

2006-10-01

Ba(Zr0.2Ti0.8)O3 (BZT) thin films on Pt(111)/Ti /SiO2/Si(100) substrates without and with CaRuO3 (CRO) buffer layer were fabricated at 650°C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25-35nm; the average grain size of BZT/CRO films is about 80nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ˜70% and 37 and 75% and 36, respectively, under an applied field of 400kV /cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed.

Enhanced dielectric standoff and mechanical failure in field-structured composites

NASA Astrophysics Data System (ADS)

Martin, James E.; Tigges, Chris P.; Anderson, Robert A.; Odinek, Judy

1999-09-01

We report dielectric breakdown experiments on electric-field-structured composites of high-dielectric-constant BaTiO3 particles in an epoxy resin. These experiments show a significant increase in the dielectric standoff strength perpendicular to the field structuring direction, relative to control samples consisting of randomly dispersed particles. To understand the relation of this observation to microstructure, we apply a simple resistor-short breakdown model to three-dimensional composite structures generated from a dynamical simulation. In this breakdown model the composite material is assumed to conduct primarily through particle contacts, so the simulated structures are mapped onto a resistor network where the center of mass of each particle is a node that is connected to neighboring nodes by resistors of fixed resistance that irreversibly short to perfect conductors when the current reaches a threshold value. This model gives relative breakdown voltages that are in good agreement with experimental results. Finally, we consider a primitive model of the mechanical strength of a field-structured composite material, which is a current-driven, conductor-insulator fuse model. This model leads to a macroscopic fusing behavior and can be related to mechanical failure of the composite.
Structural, morphological, dielectric and impedance spectroscopy of lead-free Bi(Zn2/3Ta1/3)O3 electronic material

NASA Astrophysics Data System (ADS)

Halder, S.; Bhuyan, S.; Das, S. N.; Sahoo, S.; Choudhary, R. N. P.; Das, P.; Parida, K.

2017-12-01

A lead-free dielectric material [Bi(Zn2/3Ta1/3)O3] has been prepared using a solid state reaction technique at high-temperature. The resistive, conducting and capacitive characteristics of the prepared electronic material have been studied in different experimental conditions. The determination of basic crystal parameters and reflection indices confirm the development of polycrystalline compound with orthorhombic crystal structure. The study of frequency-temperature dependence of ac conductivity illustrates the nature and conduction mechanism of the material. On the basis of observed impedance data and detailed dielectric analysis, the existence of non-Debye type relaxation has been affirmed. The electronic charge carriers of compound have short range order that has been validated from the complex modulus and impedance spectrum. The detailed studies of resistive, capacitive, microstructural characteristics of the prepared material provide some useful data for considering the material as an electronic component for fabrication of devices.
Microstructure of the multiple-filamentation zone formed by femtosecond laser radiation in a solid dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geints, Yu E; Zemlyanov, A A; Kabanov, A M

The regularities of multiple filamentation of gigawatt femtosecond laser pulses in a solid dielectric (optical glass) have been considered. The fine spatial structure of the plasma region that is formed under glass photoionisation and accompanies the formation of light filaments is analysed experimentally and by means of numerical simulation. The dependence of the number, position, and extension of individual 'generations' of plasma channels on the laser pulse energy has been investigated for the first time. It is found that the distribution of the number of plasma channels over the length of a dielectric sample has a maximum, the position ofmore » which correlates well with the position of the nonlinear focus of the light beam as a whole; at the same time, the average channel length decreases with increasing pulse power, whereas the number of successive channel 'generations', on the contrary, increases. (interaction of laser radiation with matter. laser plasma)« less
Method for computationally efficient design of dielectric laser accelerator structures

DOE PAGES

Hughes, Tyler; Veronis, Georgios; Wootton, Kent P.; ...

2017-06-22

Here, dielectric microstructures have generated much interest in recent years as a means of accelerating charged particles when powered by solid state lasers. The acceleration gradient (or particle energy gain per unit length) is an important figure of merit. To design structures with high acceleration gradients, we explore the adjoint variable method, a highly efficient technique used to compute the sensitivity of an objective with respect to a large number of parameters. With this formalism, the sensitivity of the acceleration gradient of a dielectric structure with respect to its entire spatial permittivity distribution is calculated by the use of onlymore » two full-field electromagnetic simulations, the original and ‘adjoint’. The adjoint simulation corresponds physically to the reciprocal situation of a point charge moving through the accelerator gap and radiating. Using this formalism, we perform numerical optimizations aimed at maximizing acceleration gradients, which generate fabricable structures of greatly improved performance in comparison to previously examined geometries.« less
Sol-gel derived CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics: Synthesis, characterization and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Laijun; Fan Huiqing; Fang Pinyang

2008-07-01

The giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) has been synthesized by sol-gel method, for the first time, using nitrate and alkoxide precursor. The electrical properties of CCTO ceramics, showing an enormously large dielectric constant {epsilon} {approx} 60,000 (100 Hz at RT), were investigated in the temperature range from 298 to 358 K at 0, 5, 10, 20, and 40 V dc. The phases, microstructures, and impedance properties of final samples were characterized by X-ray diffraction, scanning electron microscopy, and precision impedance analyzer. The dielectric permittivity of CCTO synthesized by sol-gel method is at least three times ofmore » magnitude larger than that synthesized by other low-temperature method and solid-state reaction method. Furthermore, the results support the internal barrier layer capacitor (IBLC) model of Schottky barriers at grain boundaries between semiconducting grains.« less
Ceramics with Different Additives

NASA Astrophysics Data System (ADS)

Wang, Juanjuan; Feng, Lajun; Lei, Ali; Zhao, Kang; Yan, Aijun

2014-09-01

Li2CO3, MgCO3, BaCO3, and Bi2O3 dopants were introduced into CaCu3Ti4O12 (CCTO) ceramics in order to improve the dielectric properties. The CCTO ceramics were prepared by conventional solid-state reaction method. The phase structure, microstructure, and dielectric behavior were carefully investigated. The pure structure without any impurity phases can be confirmed by the x-ray diffraction patterns. Scanning Electron Microscopy (SEM) analysis illuminated that the grains of Ca0.90Li0.20Cu3Ti4O12 ceramics were greater than that of pure CCTO. It was important for the properties of the CCTO ceramics to study the additives in complex impedance spectroscopy. It was found that the Ca0.90Li0.20Cu3Ti4O12 ceramics had the higher permittivity (>45000), the lower dielectric loss (<0.025) than those of CCTO at 1 kHz at room temperature and good temperature stability from -30 to 75 °C.
Cu3Mo2O9: An Ultralow-Firing Microwave Dielectric Ceramic with Good Temperature Stability and Chemical Compatibility with Aluminum

NASA Astrophysics Data System (ADS)

Wen, Wangxi; Li, Chunchun; Sun, Yihua; Tang, Ying; Fang, Liang

2018-02-01

An ultralow-firing microwave dielectric ceramic Cu3Mo2O9 with orthorhombic structure has been fabricated via a solid-state reaction method. X-ray diffraction analysis, Rietveld refinement, Raman spectroscopy, energy-dispersive spectrometry, and scanning electron microscopy were employed to explore the phase purity, crystal structure, and microstructure. Pure and dense Cu3Mo2O9 ceramics could be obtained in the sintering temperature range from 580°C to 680°C. The sample sintered at 660°C for 4 h exhibited the highest relative density (˜ 97.2%) and best microwave dielectric properties with ɛ r = 7.2, Q × f = 19,300 GHz, and τ f = - 7.8 ppm/°C. Chemical compatibility with aluminum electrodes was also confirmed. All the results suggest that Cu3Mo2O9 ceramic is a promising candidate for use in ultralow-temperature cofired ceramic applications.
Microstructural, dielectric and magnetic properties of multiferroic composite system barium strontium titanate – nickel cobalt ferrite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pahuja, Poonam, E-mail: poonampahuja123@gmail.com; Tandon, R. P., E-mail: ram-tandon@hotmail.com

2015-05-15

Multiferroic composites (1-x) Ba{sub 0.95}Sr{sub 0.05}TiO{sub 3} + (x) Ni{sub 0.8}Co{sub 0.2}Fe{sub 2}O{sub 4} (where x = 0.1, 0.2, 0.3, 0.4) has been prepared by solid state reaction method. X-ray diffraction analysis of the composite samples confirmed the presence of both barium strontium titanate (BST) and nickel cobalt ferrite (NCF) phases. FESEM images indicated the well dispersion of NCF grains among BST grains. Dielectric constant and loss of the composite samples decreases with increase in frequency following Maxwell-Wagner relaxation mechanism. Composite sample with highest ferrite content possesses highest values of remanent and saturation magnetization.
Influence of oxygen annealing on the dielectric properties of SrBi2(V0.1Nb0.9)2O9 ceramics

NASA Astrophysics Data System (ADS)

Wu, Y.; Forbess, M.; Seraji, S.; Limmer, S.; Chou, T.; Cao, G. Z.

2001-09-01

The influences of O2 and N2 annealing on the dielectric properties of SrBi2(V0.1Nb0.9)2O9 (SBVN) ferroelectrics were studied. Ceramic samples were prepared by reaction sintering a powder mixture of constituent oxides at 950 °C for 2 h in air. Some samples were also subsequently annealed at 800 °C for 3 h in O2 or N2. With O2 annealing, the Curie point of the SBVN ferroelectrics changed from ~433 to ~438 °C and the peak dielectric constant increased from ~760 to ~1010 (at 100 kHz). However, no change in the Curie point was found with N2 annealing. Furthermore, O2 annealing was found to reduce significantly both the dielectric constant and loss tangent of the SBVN ferroelectrics at frequencies below 1000 Hz. XRD results revealed a small reduction in the lattice constants with O2 annealing, but no appreciable change with N2 annealing. In addition, no detectable change in the microstructure of the SBVN samples was found with annealing. These results imply that some V4+ ions, which are compensated by the formation of oxygen vacancies, existed in the SBVN ferroelectrics prior to O2 annealing. V4+ ions were oxidized to V5+ with O2 annealing, which resulted in improved dielectric properties.
Antioxidant Potential and Antibacterial Efficiency of Caffeic Acid-Functionalized ZnO Nanoparticles

PubMed Central

Choi, Kyong-Hoon; Nam, Ki Chang; Lee, Sang-Yoon; Cho, Guangsup; Jung, Jin-Seung; Kim, Ho-Joong; Park, Bong Joo

2017-01-01

We report a novel zinc oxide (ZnO) nanoparticle with antioxidant properties, prepared by immobilizing the antioxidant 3-(3,4-dihydroxyphenyl)-2-propenoic acid (caffeic acid, CA) on the surfaces of micro-dielectric barrier discharge (DBD) plasma-treated ZnO nanoparticles. The microstructure and physical properties of ZnO@CA nanoparticles were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), infrared spectroscopy, and steady state spectroscopic methods. The antioxidant activity of ZnO@CA nanoparticles was evaluated using an ABTS (3-ethyl-benzothiazoline-6-sulfonic acid) radical cation decolorization assay. ZnO@CA nanoparticles exhibited robust antioxidant activity. Moreover, ZnO@CA nanoparticles showed strong antibacterial activity against Gram-positive bacteria (Staphylococcus aureus) including resistant bacteria such as methicillin-resistant S. aureus and against Gram-negative bacteria (Escherichia coli). Although Gram-negative bacteria appeared to be more resistant to ZnO@CA nanoparticles than Gram-positive bacteria, the antibacterial activity of ZnO@CA nanoparticles was dependent on particle concentration. The antioxidant and antibacterial activity of ZnO@CA may be useful for various biomedical and nanoindustrial applications. PMID:28621707
Preparation Process and Dielectric Properties of Ba(0.5)Sr(0.5)TiO3-P(VDF-CTFE) Nanocomposites

NASA Technical Reports Server (NTRS)

Zhang, Lin; Wu, Peixuang; Li, Yongtang; Cheng, Z. -Y.; Brewer, Jeffrey C.

2014-01-01

Ceramic-polymer 0-3 nanocomposites, in which nanosized Ba(0.5)Sr(0.5)TiO3 (BST) powders were used as ceramic filler and P(VDF-CTFE) 88/12 mol% [poly(vinylidene fluoridechlorotrifluoroethylene)] copolymer was used as matrix, were studied over a concentration range from 0 to 50 vol.% of BST powders. It is found that the solution cast composites are porous and a hot-press process can eliminate the porosity, which results in a dense composite film. Two different configurations used in the hot-press process are studied. Although there is no clear difference in the uniformity and microstructure of the composites prepared using these two configurations, the composite prepared using one configuration exhibit a higher dielectric constant with a lower loss. For the composite with 40 vol. BST, a dielectric constant of 70 with a loss of 0.07 at 1 kHz is obtained at room temperature. The composites exhibit a lower dielectric loss than the polymer matrix at high frequency. However, at low frequency, the composites exhibit a higher loss than the polymer matrix due to a low frequency relaxation process that appears in the composites. It is believed that this relaxation process is related to the interfacial layer formed between BST particle and the polymer matrix. The temperature dependence of the dielectric property of the composites was studied. It is found that the dielectric constant of these composites is almost independent of the temperature over a temperature range from 20 to 120 C. Key words: A. Polymer-matrix composites (PMCs); B. Electrical Properties; E. Casting; E. Heat treatment; Dielectric properties.
Microstructure and dielectric properties of BaTiO{sub 3} ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Min-Jia; Yang, Hui; Zhejiang California International NanoSystems Institute, Hangzhou 310029

2014-12-15

Graphical abstract: Core–shell structure can be obtained in BaTiO{sub 3} ceramics co-doped with Y–Mg-Ga-Si. Y-Mg-Ga-Si co-dopant can obviously reduce dielectric loss, improve AC breakdown voltage and flatten temperature dependence of capacitance curve. - Highlights: • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics with core-shell structure were prepared. • Y{sup 3+}, Mg{sup 2+}, and Ga{sup 3+} dissolved in the lattice BaTiO{sub 3} replacing Ba{sup 2+} site or Ti{sup 4+} site. • Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries as a shell maker. • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics show high AC breakdown voltage and low tanδ. -more » Abstract: The microstructures and dielectric properties of Y-Mg-Ga-Si co-doped barium titanate ceramics were investigated. Y{sup 3+} dissolved in the lattice of BaTiO{sub 3} replacing both Ba{sup 2+} site and Ti{sup 4+} site, and Mg{sup 2+} replaced Ti{sup 4+} site. The replacements of Y{sup 3+} and Mg{sup 2+} inhibit the grain growth, cause tetragonal-to-pseudocubic phase transition, reduce the dielectric loss, and flatten the temperature dependence of capacitance curve. The incorporation of Ga{sup 3+} can improve sintering and increase permittivity. Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries, and play an important role as a shell maker in the formation of the core–shell structure in the co-doped BaTiO{sub 3} ceramics. Excellent dielectric properties: ϵ{sub r} = ∼2487, tanδ = ∼0.7% (at 1 kHz), ΔC/C{sub 25} < ∼6.56% (from −55 °C to 125 °C) and alternating current breakdown voltage E < ∼4.02 kV/mm can be achieved in the BaTiO{sub 3}–0.02Y{sub 2}O{sub 3}–0.03MgO–0.01Ga{sub 2}O{sub 3}–0.005SiO{sub 2} ceramics sintered at 1380 °C. This material has a potential application in alternating current multilayer ceramic capacitor.« less
Nanostructured MgTiO3 thick films obtained by electrophoretic deposition from nanopowders prepared by solar PVD

NASA Astrophysics Data System (ADS)

Apostol, Irina; Mahajan, Amit; Monty, Claude J. A.; Venkata Saravanan, K.

2015-12-01

A novel combination of solar physical vapor deposition (SPVD) and electrophoretic deposition (EPD) that was developed to grow MgTiO3 nanostructured thick films is presented. Obtaining nanostructured MgTiO3 thick films, which can replace bulk ceramic components, a major trend in electronic industry, is the main objective of this work. The advantage of SPVD is direct synthesis of nanopowders, while EPD is simple, fast and inexpensive technique for preparing thick films. SPVD technique was developed at CNRS-PROMES Laboratory, Odeillo-Font Romeu, France, while the EPD was performed at University of Aveiro - DeMAC/CICECO, Portugal. The nanopowders with an average crystallite size of about 30 nm prepared by SPVD were dispersed in 50 ml of acetone in basic media with addition of triethanolamine. The obtained well-dispersed and stable suspensions were used for carrying out EPD on 25 μm thick platinum foils. After deposition, films with thickness of about 22-25 μm were sintered in air for 15 min at 800, 900 and 1000 °C. The structural and microstructural characterization of the sintered thick films was carried out using XRD and SEM, respectively. The thickness of the sintered samples were about 18-20 μm, which was determined by cross-sectional SEM. Films sintered at 900 °C exhibit a dielectric constant, ɛr ∼18.3 and dielectric loss, tan δ ∼0.0012 at 1 MHz. The effects of processing techniques (SPVD and EPD) on the structure, microstructure and dielectric properties are reported in detail. The obtained results indicate that the thick films obtained in the present study can be promising for low loss materials for microwave and millimeter wave applications.
Microstructure and dielectric parameters of epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructures

NASA Astrophysics Data System (ADS)

Boikov, Yu. A.; Claeson, T.

2001-05-01

Epitaxial films of ferroelectric barium titanate are desirable in a number of applications but their properties are inferior to those of bulk material. Relations between microstructure and dielectric properties may give better understanding of limitations. Trilayer heterostructures SrRuO3/BaTiO3/SrRuO3 were grown by laser ablation on (100)LaAlO3 and (100)MgO substrates. The BaTiO3 layer was granular in structure. When grown on (100)SrRuO3/(100)LaAlO3, it was preferentially a-axis oriented due to tensile mechanical stress. Using (100)MgO as a substrate, on the other hand, produced a mixture of about equal value of a-axis and c-axis oriented grains of BaTiO3. The dielectric permittivity, ɛ, of the BaTiO3 layer was almost twice as large, at T>200 K and f=100 kHz, for the LaAlO3 substrate as compared to the MgO one. Its maximum value (ɛ/ɛ0≈6200) depended on temperature of growth, grain size, and electric field and compares well with optimal values commonly used for ceramic material. The maximum in the ɛ(T) shifted from about 370 to 320 K when the grain size in the BaTiO3 film decreased from 100 to 40 nm. At T<300 K, hysteresis loops in polarization versus electric field were roughly symmetric. The BaTiO3 films grown on (100)SrRuO3/(100)MgO exhibit the largest remnant polarizations and coercive fields in the temperature range 100-380 K.
Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

2016-04-01

The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.
Sintering and Microstructure of BaTiO3 Nano Particles Synthesized by Molten Salt Method.

PubMed

Lee, Chang-Hyun; Shin, Hyo-Soon; Yeo, Dong-Hun; Ha, Gook-Hyun; Nahm, Sahn

2016-05-01

In order to establish thinner dielectric layers in thick film electronic components such as MLCC (Multilayer ceramic capacitor), BaTiO3 nanoparticles have been utilized. However, studies on the synthesis of nanoparticles smaller than 20 nm, the characteristics of the BaTiO3 powder, and the powder's sintering are lacking. Therefore, this paper aims to synthesize BaTiO3 particles smaller than 20 nm by using the molten salt method and evaluate the microstructure and dielectric properties by varying the sintering temperature from 750 degrees C to 1200 degrees C. Through the molten salt method and by using KOH-KCl mixed salt, 20 nm BaTiO3 powder was synthesized at a low temperature of 150 degrees C. Sintering the pellets formed from the synthesized 20 nm BaTiO3 nano powder led to the observation of an unusual phenomenon where the particles grew to approximate sizes below 850 degrees C where densification progressed. At sintering temperatures above 950 degrees C, particles that expanded into rod shapes were observed and these particles were identified to be unreacted TiO2 based on the results of the EDX (Energy Dispersive X-ray Spectroscopy) analysis and phase analysis results.
Microstructure and electroluminescent performance of chemical vapor deposited zinc sulfide doped with manganese films for integration in thin film electroluminescent devices

NASA Astrophysics Data System (ADS)

Topol, Anna Wanda

Zinc sulfide (ZnS) doped with manganese (Mn), ZnS:Mn, is widely recognized as the brightest and most effective electroluminescent (EL) phosphor used in current thin film electroluminescent (TFEL) devices. ZnS acts as a host lattice for the luminescent activator, Mn, leading to a highly efficient yellow-orange EL emission, and resulting in a wide array of applications in monochrome, multi-color and full color displays. Although this wide band dap (3.7 eV) material can be prepared by several deposition techniques, the chemical vapor deposition (CVD) is the most promising for TFEL applications in terms of viable deposition rates, high thickness and composition uniformity, and excellent yield over large area panels. This study describes the development and optimization of a CVD ZnS:Mn process using diethylzinc [(C2H5)2Zn, DEZ], di-pi-cyclopentadienylmanganese [(C5H5)2Mn, CPMn], and hydrogen sulfide [H2S] as the chemical sources for, respectively, Zn, Mn, and S. The effects of key deposition parameters on resulting Film microstructure and performance are discussed, primarily in the context of identifying an optimized process window for best electroluminescence behavior. In particular, substrate temperature was observed to play a key role in the formation of high quality crystalline ZnS:Mn films leading to improved brightness and EL efficiency. Further investigations of the influence of temperature treatment on the structural characteristics and EL performance of the CVD ZnS:Mn film were carried out. In this study, the influence of post-deposition annealing both in-situ and ex-situ annealing processes, on chemical, structural, and electroluminescent characteristics of the phosphor layer are described. The material properties of the employed dielectric are among the key factors determining the performance, stability and reliability of the TFEL display and therefore, the choice of dielectric material for use in ACTFEL displays is crucial. In addition, the luminous efficiency depends on the density of the interface states and their depth at the insulator-phosphor interfaces. Hence, critical integration issues are discussed in terms of the incorporation of ZnS:Mn films in dielectricsemiconductor-dielectric (DSD) structures with silicon nitride (SiNx) and aluminum titanium oxide (ATO) as top and bottom insulators.
Microstructural and optical properties of Co doped NiO nanoparticles synthesized by auto combustion using NaOH as fuel

NASA Astrophysics Data System (ADS)

Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

2018-05-01

The nanoparticles of 5% Co doped NiO were synthesized by auto-combustion method in aqueous medium using NaOH as a fuel. The obtained particles were characterized using X-ray diffraction studies XRD. The results of structural characterization shows the formation of Co doped Nickel oxide nanoparticles in single phase without any impurity. The optical absorption spectra of Co doped NiO sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The variation of dielectric constant and dielectric loss has been studied as function of frequency. Co doping affects the optical properties and band gap. NiO can potentially be used in optical, electronic, catalytic materials, antimicrobial agent and super-paramagnetic devices.
Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

2016-05-23

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest themore » formation of Inter Layer (IL) in between Substrate and film.« less
One-pot synthesis of LaFeO3-NiFe2O4 nanocomposite ceramic by egg-white method and its magnetic and dielectric properties

NASA Astrophysics Data System (ADS)

Muthu, K. Sudalai; Lakshminarasimhan, N.; Perumal, P.

2017-10-01

A facile, one-pot synthesis of nanocomposite of LaFeO3-NiFe2O4 was demonstrated by using egg-white method. The same method was adopted to synthesize the individual component oxide nanoparticles of LaFeO3 (LFO) and NiFe2O4 (NFO). The phase formation of individual components and the nanocomposite was confirmed using powder X-Ray diffraction (XRD) technique. The measured room temperature magnetic properties of LFO, NFO and LFO-NFO nanoparticles revealed an enhancement in the properties of the nanocomposite. The dielectric behaviours of LFO, NFO and LFO-NFO pellets sintered at different temperatures such as 800, 900 and 1000 °C were investigated and correlated with the microstructures.

In Situ Atom Probe Deintercalation of Lithium-Manganese-Oxide.

PubMed

Pfeiffer, Björn; Maier, Johannes; Arlt, Jonas; Nowak, Carsten

2017-04-01

Atom probe tomography is routinely used for the characterization of materials microstructures, usually assuming that the microstructure is unaltered by the analysis. When analyzing ionic conductors, however, gradients in the chemical potential and the electric field penetrating dielectric atom probe specimens can cause significant ionic mobility. Although ionic mobility is undesirable when aiming for materials characterization, it offers a strategy to manipulate materials directly in situ in the atom probe. Here, we present experimental results on the analysis of the ionic conductor lithium-manganese-oxide with different atom probe techniques. We demonstrate that, at a temperature of 30 K, characterization of the materials microstructure is possible without measurable Li mobility. Also, we show that at 298 K the material can be deintercalated, in situ in the atom probe, without changing the manganese-oxide host structure. Combining in situ atom probe deintercalation and subsequent conventional characterization, we demonstrate a new methodological approach to study ionic conductors even in early stages of deintercalation.
Computer Simulation of Spatial Arrangement and Connectivity of Particles in Three-Dimensional Microstructure: Application to Model Electrical Conductivity of Polymer Matrix Composite

NASA Technical Reports Server (NTRS)

Louis, P.; Gokhale, A. M.

1996-01-01

Computer simulation is a powerful tool for analyzing the geometry of three-dimensional microstructure. A computer simulation model is developed to represent the three-dimensional microstructure of a two-phase particulate composite where particles may be in contact with one another but do not overlap significantly. The model is used to quantify the "connectedness" of the particulate phase of a polymer matrix composite containing hollow carbon particles in a dielectric polymer resin matrix. The simulations are utilized to estimate the morphological percolation volume fraction for electrical conduction, and the effective volume fraction of the particles that actually take part in the electrical conduction. The calculated values of the effective volume fraction are used as an input for a self-consistent physical model for electrical conductivity. The predicted values of electrical conductivity are in very good agreement with the corresponding experimental data on a series of specimens having different particulate volume fraction.
Phase separated microstructure and dynamics of polyurethane elastomers under strain

NASA Astrophysics Data System (ADS)

Iacob, Ciprian; Padsalgikar, Ajay; Runt, James

The molecular mobility of polyurethane elastomers is of the utmost importance in establishing physical properties for uses ranging from automotive tires and shoe soles to more sophisticated aerospace and biomedical applications. In many of these applications, chain dynamics as well as mechanical properties under external stresses/strains are critical for determining ultimate performance. In order to develop a more complete understanding of their mechanical response, we explored the effect of uniaxial strain on the phase separated microstructure and molecular dynamics of the elastomers. We utilize X-ray scattering to investigate soft segment and hard domain orientation, and broadband dielectric spectroscopy for interrogation of the dynamics. Uniaxial deformation is found to significantly perturb the phase-separated microstructure and chain orientation, and results in a considerable slowing down of the dynamics of the elastomers. Attenuated total reflectance Fourier transform infrared spectroscopy measurements of the polyurethanes under uniaxial deformation are also employed and the results are quantitatively correlated with mechanical tensile tests and the degree of phase separation from small-angle X-ray scattering measurements.
Anomalous permittivity in fine-grain barium titanate

NASA Astrophysics Data System (ADS)

Ostrander, Steven Paul

Fine-grain barium titanate capacitors exhibit anomalously large permittivity. It is often observed that these materials will double or quadruple the room temperature permittivity of a coarse-grain counterpart. However, aside from a general consensus on this permittivity enhancement, the properties of the fine-grain material are poorly understood. This thesis examines the effect of grain size on dielectric properties of a self-consistent set of high density undoped barium titanate capacitors. This set included samples with grain sizes ranging from submicron to ˜20 microns, and with densities generally above 95% of the theoretical. A single batch of well characterized powder was milled, dry-pressed then isostatically-pressed. Compacts were fast-fired, but sintering temperature alone was used to control the grain size. With this approach, the extrinsic influences are minimized within the set of samples, but more importantly, they are normalized between samples. That is, with a single batch of powder and with identical green processing, uniform impurity concentration is expected. The fine-grain capacitors exhibited a room temperature permittivity of ˜5500 and dielectric losses of ˜2%. The Curie-temperature decreased by {˜}5sp°C from that of the coarse-grain material, and the two ferroelectric-ferroelectric phase transition temperatures increased by {˜}10sp°C. The grain size induced permittivity enhancement was only active in the tetragonal and orthorhombic phases. Strong dielectric anomalies were observed in samples with grain size as small as {˜}0.4\\ mum. It is suggested that the strong first-order character observed in the present data is related to control of microstructure and stoichiometry. Grain size effects on conductivity losses, ferroelectric losses, ferroelectric dispersion, Maxwell-Wagner dispersion, and dielectric aging of permittivity and loss were observed. For the fine-grain material, these observations suggest the suppression of domain wall motion below the Curie transition, and the suppression of conductivity above the Curie transition.
Phase Transformation, Surface Morphology and Dielectric Property of P(VDF-HFP)/MgCl2·6H2O Nanocomposites

NASA Astrophysics Data System (ADS)

Yuennan, J.; Sukwisute, P.; Boripet, B.; Muensit, N.

2017-09-01

Nanocomposite piezoelectric films based on the blend of poly(vinylidenefluoride-hexafluoropropylene) (PVDF-HFP) and magnesium chloride hexahydrate (MgCl2•6H2O) have been investigated in this work. The films incorporated with 0.5 wt% MgCl2•6H2O were prepared using a solution casting technique and uniaxially stretched at various ratios from 2 to 6 times in order to characterize phase transformation, surface morphology and dielectric behaviour. The piezoelectric β phase transformation and crystallinity of the stretched films were identified by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). A scanning electron microscopy (SEM) was conducted to observe the surface microstructure and porosity. The frequency dependence of dielectric properties was also measured by LCR meter at room temperature. The stretched films show the larger the stretching ratio, the greater the microdefects appearance. This leads to a decrease of dielectric constant with stretching ratio. Nevertheless, the P(VDF-HFP) nanocomposites with stretching ratio of 4 times display a higher β phase fraction of 90% than the unstretched films. Thus, this result points out that the β phase transformation of the composite films can be enhanced by mechanically stretching process.
Electroactive BaTiO3 nanoparticle-functionalized fibrous scaffolds enhance osteogenic differentiation of mesenchymal stem cells

PubMed Central

Li, Yiping; Dai, Xiaohan; Bai, Yunyang; Liu, Yun; Wang, Yuehong; Liu, Ousheng; Yan, Fei; Tang, Zhangui; Zhang, Xuehui; Deng, Xuliang

2017-01-01

It has been proven that the surface topographic cues of fiber arrangement can induce osteogenic differentiation of mesenchymal stem cells. However, this effect alone is weak and insufficient to meet the needs of regenerative medicine. In this work, electroactivity concept was introduced to enhance the osteoinductivity of fibrous scaffolds. The randomly oriented and aligned electroactive fibrous scaffolds of poly-(l-lactic acid) (PLLA) with incorporation of ferroelectric ceramic BaTiO3 (BTO) nanoparticles (NPs) were fabricated by electrospinning. Physicochemical properties, including fiber morphology, microstructure, composition, thermal stability, surface roughness, and surface wettability, of these fibrous scaffolds were studied. The dielectric properties of the scaffolds were evaluated. The results showed that the randomly oriented BTO/PLLA composite fibrous scaffolds had the highest dielectric permittivity of 1.19, which is of the same order of magnitude as the natural bone. The combined effects of fiber orientation and electrical activity on the osteogenic responses of bone marrow mesenchymal stem cells (BM-MSCs) were specifically investigated. Randomly oriented composite fibrous scaffolds significantly promoted polygonal spreading and encouraged early osteogenic differentiation in BM-MSCs, whereas aligned composite fibrous scaffolds promoted cell elongation and discouraged osteogenic differentiation. These results evidenced that randomly fiber orientation and biomimetic electric activity have combining effects on osteogenic differentiation of BM-MSCs. Our findings indicate that coupling effects of multi-physical properties should be paid more attention to mimic the microenvironment for enhancing osteogenic differentiation of BM-MSCs. PMID:28603415
Studies on magnetocapacitance, dielectric, ferroelectric, and magnetic properties of microwave sintered (1-x) (Ba0.8Sr0.2TiO3) - x (Co0.9Ni0.1Fe2O4) multiferroic composite

NASA Astrophysics Data System (ADS)

Mane, Sagar M.; Tirmali, Pravin M.; Ranjit, Bhakti; Khan, Madiha; Khan, Nargis; Tarale, Arjun N.; Kulkarni, Shrinivas B.

2018-07-01

Present paper reports the synthesis of multiferroic composite (1-x) [Ba0.8Sr0.2Ti)O3]-x[Co0.9Ni0.1Fe2O4] were x = 0.1, 0.2, 0.3 and 0.4. Both phases of the composite i.e. ferroelectric (BST) and ferrite (CNFO) are synthesized via hydroxide co-precipitation method followed by microwave sintering technique at 1100 °C. These composites were characterized for their structural, microstructural, dielectric analysis, magnetodielectric (MD) effect and ferroelectric properties. Presence of both the phases ferroelectric (BST) and ferromagnetic (CNFO) are confirmed by the x-ray diffraction and scanning electron microscopic analysis. Maxwell-Wagner type dielectric dispersion is observed in frequency dependent dielectric measurement. Temperature-dependent dielectric properties were measured from 25 °C to 500 °C at various applied frequencies. Ferroelectric behavior in the composites was confirmed by the polarization vs. Electric field analysis. The magnetodielectric effect was studied in the presence of applied magnetic field from 0 to 1 Tesla. Magnetocapacitance (%) increases with increase in the ferrite concentration in the ferroelectric phase. The maximum percentage of magnetocapacitance is observed in 60BST-40CNFO composite which is MC = 30% at the frequency 1 KHz with the applied magnetic field is 1-Tesla. Room temperature magnetic hysteresis loops show an increase in saturation magnetization (Ms) with an increase in ferrite concentration.
Magnetoelectric effect in nanogranular FeCo-MgF films at GHz frequencies

NASA Astrophysics Data System (ADS)

Ikeda, Kenji; Kobayashi, Nobukiyo; Arai, Ken-Ichi; Yabukami, Shin

2018-01-01

The magnetoelectric effect is a key issue for material science and is particularly significant in the high frequency band, where it is indispensable in industrial applications. Here, we present for the first time, a study of the high frequency tunneling magneto-dielectric (TMD) effect in nanogranular FeCo-MgF films, consisting of nanometer-sized magnetic FeCo granules dispersed in an MgF insulator matrix. Dielectric relaxation and the TMD effect are confirmed at frequencies over 10 MHz. The frequency dependence of dielectric relaxation is described by the Debye-Fröhlich model, taking relaxation time dispersion into account, which reflects variations in the nature of the microstructure, such as granule size, and the inter-spacing between the granules that affect the dielectric response. The TMD effect reaches a maximum at a frequency that is equivalent to the inverse of the relaxation time. The frequency where the peak TMD effect is observed varies between 12 MHz and 220 MHz, depending on the concentration of magnetic metal in the nanogranular films. The inter-spacing of the films decreases with increasing magnetic metal concentration, in accordance with the relaxation time. These results indicate that dielectric relaxation is controlled by changing the nanostructure, using the deposition conditions. A prospective application of these nanogranular films is in tunable impedance devices for next-generation mobile communication systems, at frequencies over 1 GHz, where capacitance is controlled using the applied magnetic field.
Synthesis and characterization of (Bi{sub 0.5}Ba{sub 0.5}) (Fe{sub 0.5}Ti{sub 0.5}) O{sub 3} ceramic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parida, B.N., E-mail: bichitra_mama@rediffmail.com; Das, Piyush R., E-mail: prdas63@gmail.com; Padhee, R.

2015-01-15

Graphical abstract: Temperature variation of (a) dielectric constant (b) dielectric loss of the sample. - Highlights: • The high values of dielectric permittivity and low value of tangent loss. • It used for microwave applications. • The impedance and dielectric relaxation in the material is non exponential and non Debye-type. • Its ac conductivity obeys Jonscher universal power law. - Abstract: The polycrystalline sample of (Bi{sub 0.5}Ba{sub 0.5}) (Fe{sub 0.5}Ti{sub 0.5}) O{sub 3} (BF–BT) was prepared by a standard mixed oxide method. Analysis of room temperature XRD pattern and Raman/FTIR spectra of the compound does not exhibit any change inmore » its crystal structure of BaTiO{sub 3} on addition of BiFeO{sub 3} in equal ratio. The surface morphology of the gold-plated sintered pellet sample recorded by SEM (scanning electron microscope) exhibits a uniform distribution of grains with less porosity. Detailed studies of nature and quantity of variation of dielectric constant, tangent loss, and polarization with temperature and frequency indicate the existence of ferroelectric phase transition at high-temperature. There is a low-temperature anti-ferromagnetic phase transition below 375 °C in the material. Detailed studies of electrical properties (impedance, modulus, etc.) of the material confirmed a strong correlation between micro-structure and properties.« less
Dielectric and Impedance Characteristics of Nickel-Modified BiFeO3-BaTiO3 Electronic Compound

NASA Astrophysics Data System (ADS)

Das, S. N.; Pardhan, S. K.; Bhuyan, S.; Sahoo, S.; Choudhary, R. N. P.; Goswami, M. N.

2018-01-01

The temperature- and field-dependent capacitive, resistive and conducting characteristics of nickel-modified binary electronic systems of bismuth ferrite (BiFeO3) and barium titanate (BaTiO3) have been investigated using dielectric and impedance spectroscopy techniques. The orthorhombic crystal structures of the solid solution (Bi1-2xNixBax)(Fe1-2xTi0.2x)O3 (with x = 0.10, 0.15, 0.20 and 0.25) have been identified from powder x-ray crystallography. The micrographs exhibit the development of dense samples with reduced grain size for higher percentage of Ni in the BiFeO3-BaTiO3. The stoichiometric content of each sample has been realized using the energy dispersive x-ray technique. The relationship between micro-structural study and frequency-temperature-dependent electrical properties of the compound has revealed a negative temperature coefficient of resistance behavior. A non-Debye-type relaxation process is observed from the Niquist plot. The studied compound presents important dielectric properties for the formulation of electronic devices.
Terahertz artificial birefringence and tunable phase shifter based on dielectric metasurface with compound lattice.

PubMed

Ji, Yun-Yun; Fan, Fei; Chen, Meng; Yang, Lei; Chang, Sheng-Jiang

2017-05-15

A dielectric metasurface with line-square compound lattice structure has been fabricated and demonstrated in the terahertz (THz) regime by the THz time-domain spectroscopy and numerical simulation. A polarization dependent electromagnetically induced transparency (EIT) effect is achieved in this metasurface due to the mode coupling and interference between the resonance modes in line and square subunits of the metasurface. Accompany with the EIT effect, a large artificial birefringence effect between two orthogonal polarization states is also observed in this compound metasurface, of which birefringence is over 0.6. Furthermore, the liquid crystals are filled on the surface of this dielectric metasurface to fabricate an electrically tunable THz LC phase shifter. The experimental results show that its tunable phase shift under the biased electric field reaches 0.33π, 1.8 times higher than the bare silicon, which confirms the enhancement role of THz microstructure on the LC phase shift in the THz regime. The large birefringence phase shift of this compound metasurface and its LC tunable phase shifter will be of great significance for potential applications in THz polarization and phase devices.
Frequency dependent dielectric properties of combustion synthesized Dy2Ti2O7 pyrochlore oxide

NASA Astrophysics Data System (ADS)

Jeyasingh, T.; Saji, S. K.; Kavitha, V. T.; Wariar, P. R. S.

2018-05-01

Nanocrystalline pyrochlore material Dysprosium Titanate (Dy2Ti2O7) has been synthesized through a single step optimized combustion route. The phase purity and phase formation of the combustion product has been characterized using X-Ray diffraction analysis (XRD) and Fourier Transform Infrared Spectroscopy (FT-IR) analysis. X-Ray diffraction analysis (XRD) reveal that Dy2Ti2O7 is highly crystalline in nature with cubic structure in the Fd3m space group. The microstructures and average particle size of the prepared nanopowder were examined by High Resolution Transmission Electron Microscopy (HR-TEM). The optical band gap of the Dy2Ti2O7 nanoparticles is determined from the absorption spectrum, was attributed to direct allowed transitions through optical band gap of 3.98 eV. The frequency dependent dielectric measurements have been carried out on the sintered pellet in the frequency range 1 Hz-10 MHz. The measured value of dielectric constant (ℇ') was ˜ 43 and loss tangent (tan δ) was 4×10-3 at 1 MHz, at room temperature.
Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

NASA Astrophysics Data System (ADS)

Zhu, Xiaohong; Defaÿ, Emmanuel; Aïd, Marc; Ren, Yinjuan; Zhang, Caiyun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

2013-03-01

Ba0.7Sr0.3TiO3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm-1) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes.
Effect of temperature, high pressure and freezing/thawing of dry-cured ham slices on dielectric time domain reflectometry response.

PubMed

Rubio-Celorio, Marc; Garcia-Gil, Núria; Gou, Pere; Arnau, Jacint; Fulladosa, Elena

2015-02-01

Dielectric Time Domain Reflectometry (TDR) is a useful technique for the characterization and classification of dry-cured ham according to its composition. However, changes in the behavior of dielectric properties may occur depending on environmental factors and processing. The effect of temperature, high pressure (HP) and freezing/thawing of dry-cured ham slices on the obtained TDR curves and on the predictions of salt and water contents when using previously developed predictive models, was evaluated in three independent experiments. The results showed that at temperatures below 20 °C there is an increase of the predicted salt content error, being more important in samples with higher water content. HP treatment caused a decrease of the reflected signal intensity due to the major mobility of available ions promoting an increase of the predicted salt content. Freezing/thawing treatment caused an increase of the reflected signal intensity due to the microstructural damages and the loss of water and ions, promoting a decrease of the predicted salt content.
Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Liu, David Donhang; Sampson, Michael J.

2012-01-01

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.
Grain size effect on the giant dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} nanoceramics prepared by mechanosynthesis and spark plasma sintering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Mohamad M., E-mail: mmohamad@kfu.edu.sa; Department of Physics, Faculty of Science, Assiut University in the New Valley, El-Kharga 72511; Yamada, Koji

2014-04-21

In the present work, CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ∼200 nm for the ceramics sintered at 800 °C and 975 °C, respectively. Further increase of SPS temperature to 1050 °C leads to micro-sized ceramics of 2–3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed inmore » CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 10{sup 3}, 2.4 × 10{sup 4}, and 3.2 × 10{sup 4} for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 10{sup 4}. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.« less
Effect of vanadium substitution on the dielectric and electrical conduction properties of SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Paramita Mantry, Snigdha; Yadav, Abhinav; Fahad, Mohd; Sarun, P. M.

2018-03-01

Vanadium (V) substituted SrTiO3 (SrTi1-x V x O3 and x = 0.00-0.20) ceramic powders were synthesized by conventional solid state reaction method at sintering temperature 1250 ◦C for 2 hr. The structural, surface morphology and elemental valancy of the prepared samples were studied by using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS). The XRD analysis of SrTi1-x V x O3 confirmed the formation of single phase cubic crystal structure. The average grain size significantly increases from 0.5 μm to 7.2 μm with increasing V concentration. XPS spectrum confirms the partial reduction of Ti4+ to Ti3+ due to the doping of V5 + in SrTiO3 ceramics. The effect of V2O5 on the dielectric properties, impedance spectroscopy, Nyquist analysis and conductivity properties of SrTiO3 ceramics were investigated over a wide range of frequency (100 Hz—5 MHz) at 100 ◦C. The magnitude of dielectric constant and dielectric loss decreases with increase in frequency for all the samples. The maximum value of dielectric constant (ɛ r ˜ 500) is observed for x = 0.05 composition. The complex impedance analysis shows that the electrical conduction mechanism is mainly due to grain effect. The optimal dielectric constant (ɛ r ˜ 500) and effective capacitance (C eff = 35.80 nF) is observed for the sample with x = 0.05. Doping of donor cations lead to a drastic change in the microstructure and electrical behavior of SrTiO3 ceramics.
Microstructural, optical and electrical properties of LaFe0.5Cr0.5O3 perovskite nanostructures

NASA Astrophysics Data System (ADS)

Ali, S. Asad; Naseem, Swaleha; Khan, Wasi; Sharma, A.; Naqvi, A. H.

2016-05-01

Perovskite nanocrystalline powder of LaFe0.5Cr0.5O3 was synthesized by sol-gel combustion route and characterized by x-ray diffractometer (XRD), scanning electron microscopy (SEM) equipped with EDS, UV-visible and LCR meter at room temperature Rietveld refinement of the XRD data confirms that the sample is in single phase-rhombohedral structure with space group R-3C. SEM micrograph shows clear nanostructure of the sample and EDS ensures the presence of all elements in good stoichiometric. The optical absorption indicates the maximum absorption at 315 nm and optical band gap of 2.94 eV was estimated using Tauc's relation. Dielectric constant (ɛ') and loss were found to decrease with increase in frequencies. The dielectric behavior was explained on the basis of Maxwell-Wagner's two layer model.
Can multi-scale calibrations allow MT-derived resistivities to be used to probe the structure of the deep crust?

NASA Astrophysics Data System (ADS)

Toy, Virginia; Billia, Marco; Easingwood, Richard; Kirilova, Martina; Kluge, Emma; Sauer, Katrina; Sutherland, Rupert; Timms, Nicholas; Townend, John

2017-04-01

Our current knowledge of microstructural and mechanical controls on rock resistivity is such that identical magnetotelluric (MT) anomalies could result from a highly mineralized but extinct shear zone, or from an unmineralized, fluid saturated, active shear zone. In pursuit of the ability to interpret the structure and activity (rather than just the presence) of buried geological structures from electromagnetic data, we are investigating correlations between rock structure and electrical properties of ductile shear zone rocks recovered from the active Alpine Fault Zone, New Zealand. Multi-scale measurements of resistivity exist for this zone: its ductile portions have anomalously high electrical conductivity identified in MT models constructed as part of the South Island Geophysical Transect (SIGHT). Additionally wireline resistivities were measured in situ to 820 m depth during the recent Deep Fault Drilling Project (DFDP-2), and resisistivity of hand samples has been measured at laboratory conditions [Kluge et al., Abstract EGU2017-10139]. In exhumed and borehole samples, the distributions and arrangements of conductivity carriers - graphite, amorphous carbon, and grain boundary pores that would have contained brines or other conductive fluids at depth, have been characterised. These vary systematically according to the total ductile shear strain they have accommodated [Kirilova et al., Abstract EGU2017-5773; Sauer et al., Abstract EGU2017-10485]. Transmission electron microscopy analyses of grain boundaries also indicate that they contain carbon. The next phases of our investigation involve: (i) construction of crustal fluid composition models by quantitative microstructural and compositional/mineralogical mapping of fluid remnants and their solid residues and calibration of these using in situ measurements of fluid composition in DFDP-2 at depths to 820 m; (ii) calculation of resistivities for real microstructures based on electrical properties of the individual component minerals and fluids - for microstructures fully characterised in three-dimensions; (iii) measurement of the effects of dynamic linking of phases during ductile creep of solid rock on complex resistivity of DFDP samples at a range of realistic crustal temperatures and pressures. A particular challenge in this study is to determine appropriate scaling relationships of electrical properties among samples, boreholes, and MT models because dielectric constants of minerals depend on frequency of the imposed current, which varies with scale and, consequently, measurement method. We invite discussion of strategies to overcome this.
A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

NASA Technical Reports Server (NTRS)

Hann, Raiford E.

1991-01-01

An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

Cooperative Materials Research Projects - Student Research Program III. Student Research Program to AFRL/RX: A Summary of Various Materials Research Projects

DTIC Science & Technology

2015-05-27

the material to make the microstructure the strongest for uses at high temperatures, specifically in the turbine of a jet engine. This specific set...useful for its applications. Works Cited Pollock, Tresa M., & Tin, Sammy. “Nickel-Based Superalloys for Advanced Turbine Engines: Chemistry...not insulated well enough though and there was dielectric breakdown of the insulation between the windings . This solenoid was rewrapped with two
Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0.45Sr0.55TiO3 thin films

NASA Astrophysics Data System (ADS)

Alema, Fikadu; Reich, Michael; Reinholz, Aaron; Pokhodnya, Konstantin

2013-08-01

Composition, microstructure, and dielectric properties of undoped and Ba(Mg1/3Nb2/3)O3 (BMN) doped Ba0.45Sr0.55TiO3 (BST) thin films deposited via rf. magnetron sputtering on platinized alumina substrates have been investigated. The analysis of microstructure has shown that despite the sizable effect of doping on the residual stress, the latter is partially compensated by the thermal expansion coefficient mismatch, and its influence on the BST film crystal structure is insignificant. It was revealed that BMN doped film demonstrated an average (over 2000 devices) of 52.5% tunability at 640 kV/cm, which is ˜8% lower than the value for the undoped film. This drop is associated with the presence of Mg ions in BMN; however, the effect of Mg doping is partially compensated by that of Nb ions. The decrease in grain size upon doping may also contribute to the tunability drop. Doping with BMN allows achievement of a compensation concentration yielding no free carriers and resulting in significant leakage current reduction when compared with the undoped film. In addition, the presence of large amounts of empty shallow traps related to NbTi• allows localizing free carriers injected from the contacts thus extending the device control voltage substantially above 10 V.
Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

PubMed Central

Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

2015-01-01

The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I–V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I–V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I–V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I–V behavior of (Nb + In) co-doped TiO2 ceramics. PMID:25656713
Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

NASA Astrophysics Data System (ADS)

Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

2015-02-01

The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I-V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I-V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I-V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I-V behavior of (Nb + In) co-doped TiO2 ceramics.
Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics.

PubMed

Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

2015-02-06

The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I-V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I-V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I-V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I-V behavior of (Nb + In) co-doped TiO2 ceramics.
Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

NASA Astrophysics Data System (ADS)

Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

2013-03-01

We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.
Contributions of intrinsic and extrinsic polarization species to energy storage properties of Ba0.95Ca0.05Zr0.2Ti0.8O3 ceramics

NASA Astrophysics Data System (ADS)

Zhan, Di; Xu, Qing; Huang, Duan-Ping; Liu, Han-Xing; Chen, Wen; Zhang, Feng

2018-03-01

Ba0.95Ca0.05Zr0.2Ti0.8O3 ceramics were prepared at different sintering temperatures by citrate precursor and solid-state reaction methods, respectively. The crystal structure and microstructure of the specimens were characterized. In view of energy storage capacitor utilizations, the dielectric properties of the specimens were investigated at room temperature as a function of frequency and applied electric field. Moreover, the nature of mobile charge carriers in the specimens was diagnosed by complex impedance spectroscopy at elevated temperatures. While the dielectric constants of the specimens prepared by different methods are quite different (4.4 × 103-2.2 × 104 at 10 kHz) at zero electric field, the energy storage densities at an identical strong electric field are similar (e.g. 0.32-0.41 J/cm3 at 120 kV/cm). The dielectric constants under bias electric field were fitted to a multipolarization mechanism model to resolve the contributions of intrinsic and extrinsic polarization mechanisms. It turned out that the extrinsic contributions fade out within low electric field range (<20 kV/cm) and thereby the intrinsic lattice polarization governs the overall dielectric responses at higher fields. Based on the fitting result, the energy storage properties of the specimens were interpreted.
Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories

NASA Astrophysics Data System (ADS)

Basceri, Cem

The electrical and dielectric properties of fiber-textured, MOCVD (Basb{0.7}Srsb{0.3})TiOsb3 (BST) thin film capacitors appropriate for ultra-large scale integration (ULSI) dynamic random access memory (DRAM) applications have been analyzed. Dielectric relaxation, leakage, resistance degradation, and dielectric response phenomena, within a comprehensive matrix of external and material parameters, have been investigated. The phenomenology of the dielectric response of our BST films has been shown to be well-described by Curie-von Schweidler behavior, although the microscopic origin of this behavior has not been presently agreed upon. The time-dependent polarization behavior has been linked to the dispersion in permittivity with respect to frequency. The leakage current through our BST films has been found to be primarily limited by interfacial Schottky barriers whose properties depend on the electrode material, interface microstructure, and deposition conditions. Its temperature and voltage dependence have been interpreted via a thermionic emission model. Analysis in terms of Schottky-barrier limited current flow gave acceptable values for the cathode barrier height. The results have indicated that our BST films, appropriate for DRAM applications, do not possess depletion layers at the film-electrode interfaces. Instead, they must be considered as depleted of charge carriers across their entire thickness. Resistance degradation has been found to be thermally activated and voltage/field dependent. The results have indicated that there is a film thickness effect, which manifests itself as a decrease in the activation energy with respect to temperature for thicker films. A significant stoichiometry effect on the measured resistance degradation lifetimes has been observed. The analyses of the leakage and capacitance-voltage behaviors for the degraded samples have indicated that a demixing of oxygen vacancies occurs during resistance degradation, which causes the Schottky barrier height to decrease, in agreement with the observed relative shift of the peak capacitance as a function of voltage. For all the film thicknesses and compositions studied, extrapolated resistance degradation lifetimes of our BST films, which were obtained by using an appropriate form, are well above the current benchmark of 10 years at the DRAM operating conditions of 1.6 V and 85sp°C. Above the bulk Curie point (˜300 K), the phenomenological approach, i.e., Landau-Ginzburg-Devonshire (LGD) theory, has been demonstrated to account very well for the observed C-V behavior in our BST films. Furthermore, temperature dependent measurements gave evidence that, as expected, the form of the dielectric behavior changes near the bulk Curie point, but that the phase transition appears for some reason to be frustrated. Film thickness has been established to impact primarily the zero-bias permittivity through a thickness dependence of the first order coefficient of the LGD power series. Our analysis does indicate that if it results from a series-connected interfacial layer, that layer must be a nonlinear dielectric, as must the bulk of the film. The dielectric constant has been found to be composition dependent, reaching its highest values for compositions near the stoichiometric values. Furthermore, film stoichiometry has been established to strongly effect both the first order and third order coefficients of the LGD power series.
Correlation between nano-scale microstructural behavior and the performance of ZnO thin-film transistors.

PubMed

Ahn, Cheol Hyoun; Lee, Ju Ho; Lee, Jeong Yong; Cho, Hyung Koun

2014-12-01

Binary ZnO active layers possessing a polycrystalline structure were deposited with various argon/oxygen flow ratios at 250 degrees C via sputtering. Then ZnO thin-film-transistors (TFTs) were fabricated without additional thermal treatments. As the oxygen content increased during the deposition, the preferred orientation along the (0002) was weakened and the rotation of the grains increased, and furthermore, less conducting films were observed. On the other hand, the reduced oxygen flow rate induced the formation of amorphous-like transition layers during the initial growth due to a high growth rate and high energetic bombardment of the adatoms. As a result, the amorphous phases at the gate dielectric/channel interface were responsible for the formation of a hump shape in the subthreshold region of the TFT transfer curve. In addition, the relationship between the crystal properties and the shift in the threshold voltage was experimentally confirmed by a hysteresis test.
Fabrication, phase, microstructure and electrical properties of BNT-doped (Sr,La)TiO3 ceramics

NASA Astrophysics Data System (ADS)

Eaksuwanchai, Preeyakarn; Promsawat, Methee; Jiansirisomboon, Sukanda; Watcharapasorn, Anucha

2014-08-01

This research studied the effects of Bi0.5Na0.5TiO3 (BNT) doping on the phase, density, microstructure and electrical properties of (Sr,La)TiO3 (SLTO) ceramics. Separately calcined SLTO and BNT powders were mixed together to form (1-x)SLTO-xBNT (where x = 0, 0.01, 0.03, 0.05 and 0.07 mol fraction) compounds that were pressed into pellets and then sintered at 1500 °C for 3 h under ambient atmosphere. The relative bulk densities of all the ceramics were greater than 95% their theoretical values which were confirmed by their nearly zero-porosity microstructure. X-ray diffraction patterns indicated complete solid solutions with a cubic structure and a slight lattice contraction when BNT was added. The electrical conductivity was found to decrease with BNT addition, suggesting a reduced number of mobile charges. The dielectric constant also showed limited polarization due to defect dipoles formed by aliovalent ionic substitution of BNT. Further optimization in terms of composition and defect chemistry could lead to a compound suitable for thermoelectric applications.
Ag induced electromagnetic interference shielding of Ag-graphite/PVDF flexible nanocomposites thinfilms

NASA Astrophysics Data System (ADS)

Kumaran, R.; Alagar, M.; Dinesh Kumar, S.; Subramanian, V.; Dinakaran, K.

2015-09-01

We report Ag nanoparticle induced Electromagnetic Interference (EMI) shielding in a flexible composite films of Ag nanoparticles incorporated graphite/poly-vinylidene difluoride (PVDF). PVDF nanocomposite thin-films were synthesized by intercalating Ag in Graphite (GIC) followed by dispersing GIC in PVDF. The X-ray diffraction analysis and the high-resolution transmission electron microscope clearly dictate the microstructure of silver nanoparticles in graphite intercalated composite of PVDF matrix. The conductivity values of nanocomposites are increased upto 2.5 times when compared to neat PVDF having a value of 2.70 S/cm at 1 MHz. The presence of Ag broadly enhanced the dielectric constant and lowers the dielectric loss of PVDF matrix proportional to Ag content. The EMI shielding effectiveness of the composites is 29.1 dB at 12.4 GHz for the sample having 5 wt. % Ag and 10 wt. % graphite in PVDF.
Wafer scale formation of monocrystalline silicon-based Mie resonators via silicon-on-insulator dewetting.

PubMed

Abbarchi, Marco; Naffouti, Meher; Vial, Benjamin; Benkouider, Abdelmalek; Lermusiaux, Laurent; Favre, Luc; Ronda, Antoine; Bidault, Sébastien; Berbezier, Isabelle; Bonod, Nicolas

2014-11-25

Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, position, and organization in complex multimers.
Benchmark of ReaxFF force field for subcritical and supercritical water.

PubMed

Manzano, Hegoi; Zhang, Weiwei; Raju, Muralikrishna; Dolado, Jorge S; López-Arbeloa, Iñigo; van Duin, Adri C T

2018-06-21

Water in the subcritical and supercritical states has remarkable properties that make it an excellent solvent for oxidation of hazardous chemicals, waste separation, and green synthesis. Molecular simulations are a valuable complement to experiments in order to understand and improve the relevant sub- and super-critical reaction mechanisms. Since water molecules under these conditions can act not only as a solvent but also as a reactant, dissociative force fields are especially interesting to investigate these processes. In this work, we evaluate the capacity of the ReaxFF force field to reproduce the microstructure, hydrogen bonding, dielectric constant, diffusion, and proton transfer of sub- and super-critical water. Our results indicate that ReaxFF is able to simulate water properties in these states in very good quantitative agreement with the existing experimental data, with the exception of the static dielectric constant that is reproduced only qualitatively.
Preparation and Characterization of PbO-SrO-Na2O-Nb2O5-SiO2 Glass Ceramics Thin Film for High-Energy Storage Application

NASA Astrophysics Data System (ADS)

Tan, Feihu; Zhang, Qingmeng; Zhao, Hongbin; Wei, Feng; Du, Jun

2018-03-01

PbO-SrO-Na2O-Nb2O5-SiO2 (PSNNS) glass ceramic thin films were prepared by pulsed laser deposition technology on heavily doped silicon substrates. The influence of annealing temperatures on microstructures, dielectric properties and energy storage performances of the as-prepared films were investigated in detail. X-ray diffraction studies indicate that Pb2Nb2O7 crystallizes at 800°C and disappears at 900°C, while NaNbO3 and PbNb2O6 are formed at the higher temperature of 900°C. The dielectric properties of the glass ceramics thin films have a strong dependence on the phase assemblages that are developed during heat treatment. The maximum dielectric constant value of 171 was obtained for the film annealed at 800°C, owing to the high electric breakdown field strength, The energy storage densities of the PSNNS films annealed at 800°C were as large as 36.9 J/cm3, These results suggest that PSNNS thin films are promising for energy storage applications.
Low-Temperature Sintering Li3Mg1.8Ca0.2NbO6 Microwave Dielectric Ceramics with LMZBS Glass

NASA Astrophysics Data System (ADS)

Wang, Gang; Zhang, Huaiwu; Liu, Cheng; Su, Hua; Jia, Lijun; Li, Jie; Huang, Xin; Gan, Gongwen

2018-05-01

Li3Mg1.8Ca0.2NbO6 ceramics doped with Li2O-MgO-ZnO-B2O3-SiO2 glass (LMZBS) were prepared via a solid-state route. The LMZBS glass effectively reduced the sintering temperature of Li3Mg1.8Ca0.2NbO6 ceramics to 950°C. The effects of the LMZBS glass on the sintering behavior, microstructures and microwave dielectric properties of Li3Mg1.8Ca0.2NbO6 ceramics are discussed in detail. Among all the LMZBS doped Li3Mg1.8Ca0.2NbO6 ceramics, the sample with 1 wt.% of LMZBS glass sintered at 950°C for 4 h exhibited good dielectric properties: ɛ r = 16.7, Q × f = 31,000 GHz (9.92 GHz), τ f = - 1.3 ppm/°C. The Li3Mg1.8Ca0.2NbO6 ceramics possessed excellent chemical compatibility with Ag electrodes, and could be applied in low temperature co-fired ceramics (LTCC) applications.
Synthesis and physical characterization of γ-Fe2O3 and (α+γ)-Fe2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Bhavani, P.; Reddy, N. Ramamanohar; Reddy, I. Venkata Subba

2017-01-01

Magnetic nanoparticles were synthesized at different hydrothermal temperatures (HT; 100, 130, 160 and 190 °C) by using a facile hydrothermal route combined with a subsequent calcination process. The calcined materials were analyzed for phase, microstructure, and magnetic and dielectric properties through different characterization techniques. The structural analyses revealed that the material prepared at a HT of 100 °C and sequentially calcined at 300 °C for 3 h showed a high degree of the maghemite structure. On the other hand calcined materials showed a small additional peak belonging to the hematite structure. FESEM micrographs of the materials calcined at HT, of 100 °C and 190 °C showed spherical-like nanoparticles with diameters in range 30 - 54 nm. Materials prepared at a HT of 160 °C followed by calcination at 300 °C for 3 h exhibited the highest saturation magnetization, Ms = 67 emu/g, with a lower coercivity; all materials were in a single domain state. A high dielectric constant (105.54) was observed for the calcined material that had been prepared at a HT of 130 °C. The dielectric properties of synthesized materials showed an almost frequency-independent behavior.
Structure and Dielectric Properties of (Sr0.2Ca0.488Nd0.208) TiO3-Li3NbO4 Ceramic Composites

NASA Astrophysics Data System (ADS)

Xia, C. C.; Chen, G. H.

2017-12-01

The new ceramic composites of (1-x) Li3NbO4-x (Sr0.2Ca0.488Nd0.208)TiO3 were prepared by the conventional solid state reaction method. The sintering behavior, phase composition, microstructure and microwave dielectric properties of the ceramics were investigated specially. The SEM and XRD results show that (1-x) Li3NbO4-x (Sr0.2Ca0.488Nd0.208) TiO3 (0.35≤x≤0.5) composites were composed of two phase, i.e. perovskite and Li3NbO4. With the increase of x, the ɛr increases from 27.1 to 38.7, Q×f decreases from 55000 GHz to 16770 GHz, and the τ f increases from -49 ppm/°C to 226.7 ppm/°C. The optimized dielectric properties with ɛr∼31.4, Q×f~16770GHz and τf~-8.1ppm/°C could be obtained as x=0.4 sintered at 1100°C for 4h. The as-prepared ceramic is expected to be used in resonators, filters, and other microwave devices.
Structural, dielectric and gas sensing behavior of Mn substituted spinel MFe2O4 (M=Zn, Cu, Ni, and Co) ferrite nanoparticles

NASA Astrophysics Data System (ADS)

Ranjith Kumar, E.; Siva Prasada Reddy, P.; Sarala Devi, G.; Sathiyaraj, S.

2016-01-01

Spinel ferrite (MnZnFe2O4, MnCuFe2O4, MnNiFe2O4 and MnCoFe2O4) nanoparticles have been prepared by evaporation method. The annealing temperature plays an important role on changing particle size of the spinel ferrite nanoparticles was found out by X-ray diffraction and transmission electron microscopy. The role of manganese substitution in the spinel ferrite nanoparticles were also analyzed for different annealing temperature. The substitution of Mn also creates a vital change in dielectric properties have been measured in the frequency range of 100 kHz to 5 MHz. These spinel ferrites are decomposed to α-Fe2O3 after annealing above 550 °C in air. Through the characterization of the prepared powder, the effect of annealing temperature, chemical composition and preparation technique on the microstructure, particle size and dielectric properties of the Mn substituted spinel ferrite nanoparticles are discussed. Furthermore, Conductance response of Mn substituted MFe2O4 ferrite nanoparticles were measured by exposing the materials to reducing gas like liquefied petroleum gas (LPG).
Emergent electromechanical coupling of electrets and some exact relations — The effective properties of soft materials with embedded external charges and dipoles

NASA Astrophysics Data System (ADS)

Liu, Liping; Sharma, Pradeep

2018-03-01

Soft robotics, energy harvesting, large-deformation sensing and actuation, are just some of the applications that can be enabled by soft dielectrics that demonstrate substantive electromechanical coupling. Most soft dielectrics including elastomers, however, are not piezoelectric and rely on the universally present electrostriction and the Maxwell stress effect to enable the aforementioned applications. Electrostriction is a one-way electromechanical coupling and the induced elastic strain scales as (∝E2) upon the application of an electric field, E. The quadratic dependence of electrostriction on the electric field and the one-way coupling imply that, (i) A rather high voltage is required to induce appreciable strain, (ii) reversal of an applied bias will not reverse the sign of the deformation, and (iii) since it is a one-way coupling i.e. electrical stimuli may cause mechanical deformation but electricity cannot be generated by mechanical deformation, prospects for energy harvesting are rather difficult. An interesting approach for realizing an apparent piezoelectric-like behavior is to dope soft dielectrics with immobile charges and dipoles. Such materials, called electrets, are rather unique composites where a secondary material (in principle) is not necessary. Both experiments and supporting theoretical work have shown that soft electrets can exhibit a very large electromechanical coupling including a piezoelectric-like response. In this work, we present a homogenization theory for electret materials and provide, in addition to several general results, variational bounds and closed-form expressions for specific microstructures such as laminates and ellipsoidal inclusions. While we consider the nonlinear coupled problem, to make analytical progress, we work within the small-deformation setting. The specific conditions necessary to obtain a piezoelectric-like response and enhanced electrostriction are highlighted. There are very few universal, microstructure-independent exact results in the theory of composites. We succeed in establishing several such relations in the context of electrets.
An Investigation of Dielectric, Piezoelectric Properties and Microstructures of Bi0.5Na0.5TiO3-BaTiO3-Bi0.5K0.5TiO3 Lead-Free Piezoelectric Ceramics Doped with K2AlNbO5 Compound

NASA Astrophysics Data System (ADS)

Liu, Gang; Jiang, Wentao; Liu, Kaihua; Liu, Xiaokui; Song, Chunlin; Yan, Yan; Jin, Li

2017-08-01

The effect of K2AlNbO5 compound acting as both donor and accepter on the phase, microstructures and electrical properties of the 0.9362(Bi0.5Na0.5)TiO3-0.0637BaTiO3-0.02(Bi0.5K0.5)TiO3 [(1- x)(0.9163BNT-0.0637BT-0.02BKT)- x(K2AlNbO5)] (BNKBT-1000 xKAN) ternary lead-free piezoelectric ceramics was systematically investigated. When doping content of K2AlNbO5 was varied from 0 to 0.009, the BNKBT-1000 xKAN ceramics showed a single perovskite structure, and the phase structure transferred from a rhombohedral-tetragonal coexistent morphotropic phase boundaries zone to a tetragonal zone. The x-ray photoelectron spectroscopy analysis indicated that the chemical valence of the Nb and Al element are 5+ and 3+, respectively. Strong relaxor characteristics were revealed by the temperature-dependent dielectric properties of the ceramics. Typical square polarization-electric field ( P- E) hysteresis loops were observed in the samples with doping content lower than 0.005. However, with further increasing the doping content ( x = 0.007 and 0.009), round P- E hysteresis loops were observed due to the high conductivity of these samples. Moreover, when the doping content was less than 0.005, the ceramic samples exhibited good piezoelectric properties. Specially, when the doping content was 0.001, the piezoelectric constant d 33 and electromechanical coupling coefficient k p of the sample were 197 pC/N and 22%, respectively. However, further addition would deteriorate both the dielectric and piezoelectric properties.

Hydration and dielectrical properties of aqueous pyrrolidinium trifluoroacetate solutions

NASA Astrophysics Data System (ADS)

Lyashchenko, A. K.; Balakaeva, I. V.; Simonova, Yu. A.; Timofeeva, L. M.

2017-10-01

Results from microwave measurements of the dielectrical properties of aqueous pyrrolidinium trifluoroacetate solutions at maximum water dispersion frequencies (13-25 GHz) and temperatures of 288, 298, and 308 K are given. The static dielectrical constants, times, and activation parameters of the dielectrical relaxation of solutions are calculated. The enthalpy and time of dielectrical relaxation activation are increased by deceleration of the motion of water molecules in the hydrate shells of ions. The changes in dielectrical parameters are in this case minimal in a series of aqueous solutions of diallylammonium salts with cations of different structures and degrees of substitution. It is shown that pyrrolidinium ions are characterized by weak hydrophobic hydration.
Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

PubMed

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.
Dielectric and electrical studies of Pr{sup 3+} doped nano CaSiO{sub 3} perovskite ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulkarni, Sandhya, E-mail: pappu.sandhyakulkarni@gmail.com; Nagabhushana, B.M.; Parvatikar, Narsimha

2014-02-01

Highlights: • CaSiO{sub 3}:Pr{sup 3+} was prepared by facile low temperature solution combustion method. • The crystalline phase of the product is obtained by adopting sintering method. • Samples prepared at 500 °C and calcined at 900 °C for 3 h showed β-phase. • The Pr{sup 3+} doped CaSiO{sub 3} shows “unusual results”. • The electrical microstructure has been accepted to be of internal barrier layer capacitor. - Abstract: CaSiO{sub 3} nano-ceramic powder doped with Pr{sup 3+} has been prepared by solution combustion method. The powder Ca{sub 0.95}Pr{sub 0.05}SiO{sub 3} is investigated for its dielectric and electrical properties at roommore » temperature to study the effect of doping. The sample is characterized by X-ray diffraction and infrared spectroscopy. The size of either of volume elements of CaSiO{sub 3}:Pr{sup 3+} estimated from transmission electron microscopy is about 180–200 nm. The sample shows colossal dielectric response at room temperature. This colossal dielectric behaviour follows Debye-type relaxation and can be explained by Maxwell–Wagner (MW) polarization. However, analysis of impedance and electric modulus data using Cole–Cole plot shows that it deviates from ideal Debye behaviour resulting from the distribution of relaxation times. The distribution in the relaxation times may be attributed to existence of electrically heterogeneous grains, insulating grain boundary, and electrode contact regions. Doping, thus, results in substantial modifications in the dielectric and electrical properties of the nano-ceramic CaSiO{sub 3}.« less
Effect of V2O5 Addition on the Phase Composition of Bi5FeTi3O15 Ceramic and RF/Microwave Dielectric Properties

NASA Astrophysics Data System (ADS)

Aguiar, F. A. A.; Sales, A. J. M.; Araújo, B. S.; Sabóia, K. D. A.; Filho, M. C. Campos; Sombra, A. S. B.; Ayala, A. P.; Fechine, P. B. A.

2017-04-01

Bi5FeTi3O15 (BFT) polycrystalline ceramic with the addition of different concentrations of V2O5 was obtained by a solid-state method. X-ray powder diffraction, Raman spectroscopy and scanning electron microscopy (SEM) were used to study the microstructure and crystalline phases of the ceramics. SEM images showed plate-like morphology with dimensions between 0.32 μm and 3.07 μm (grain size, average around 1.3 μm). For samples with V2O5 concentration below 5%, Raman spectra were mainly determined by the vibrational modes from BFT. Impedance spectroscopy was also performed to evaluate the dielectric properties at microwave and radio frequencies (RF). Two extra phases (Bi4V1.5Fe0.5O10.5 and Bi2Ti2O7) were found due to the chemical reaction between BFT and V2O5. These phases were responsible for the changes in the grain morphology and dielectric response. V2O5 addition increased the real part of the dielectric permittivity ( ɛ') and reduced the dielectric loss tangent (tan δ) values at the RF range of 10 Hz to 1 MHz. For microwave frequencies of 3-3.5 GHz, ɛ' and temperature coefficient of resonant frequency ( τ f) values ranged from 66.52 ppm/°C to 88.60 ppm/°C and -304.3 ppm/°C to -192.6 ppm/°C, respectively. Thereby, BFT ceramics with added V2O5 are good candidates to be used for microwave devices (e.g., cell phones).
Effect of post annealing on structural, optical and dielectric properties of MgTiO3 thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Santhosh Kumar, T.; Bhuyan, R. K.; Pamu, D.

2013-01-01

MgTiO3 (MTO) thin films have been deposited on to quartz and platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The metal-MTO-metal (Ag-MTO-Pt/TiO2/SiO2/Si) thin film capacitors have been fabricated at different oxygen mixing percentage (OMP). The effects of OMP and post annealing on the structural, microstructural, optical and dielectric properties of MTO films were studied. The MTO target has been synthesized by mechanochemical synthesis method. The phase purity of the sputtering target was confirmed from X-ray diffraction pattern and refined to R3bar space group with lattice parameters a = b = 5.0557(12) Å, c = 13.9003(9) Å. The chemical composition of the deposited films was confirmed from EDS spectra and all the films exhibited the composition of the sputtering target. The XRD patterns of the as-deposited films are amorphous and annealing at 700 °C for 1 h induced nanocrystallinity with the improved optical and dielectric properties. The annealed films exhibit refractive index in the range of 2.12-2.19 at 600 nm with an optical bandgap value in between 4.11 and 4.19 eV. The increase in the refractive index and bandgap upon annealing can be attributed to the improvement in packing density, crystallinity, and decrease in porosity ratio. Both the dielectric constant and tan δ decrease with the increase in frequency and were in the range of 13.7-31.11 and 0.006-0.124, respectively. The improvement in dielectric properties with the increase in OMP has been correlated to the reduction in oxygen vacancies, increase in crystallinity and grain size of the films.
Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Triyoso, D. H.; Gregory, R.; Schaeffer, J. K.; Werho, D.; Li, D.; Marcus, S.; Wilk, G. D.

2007-11-01

TaCy has been reported to have the appropriate work function for negative metal-oxide semiconductor metal in high-k metal-oxide field-effect transistors. As device size continues to shrink, a conformal deposition for metal gate electrodes is needed. In this work, we report on the development and characterization of a novel TaCy process by atomic layer deposition (ALD). Detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD). RBS and XPS analysis indicate that TaCy films are near-stoichiometric, nitrogen free, and have low oxygen impurities. Powder XRD spectra showed that ALD films have a cubic microstructure. XPS carbon bonding studies revealed that little or no glassy carbon is present in the bulk of the film. Excellent electrical properties are obtained using ALD TaCy as a metal gate electrode. Well-behaved capacitance-voltage characteristics with ALD HfO2 gate dielectrics are demonstrated for TaCy thicknesses of 50, 100, and 250 Å. A low fixed charge (˜2-4×10-11 cm-2) is observed for all ALD HfO2/ALD TaCy devices. Increasing the thickness of ALD TaCy results in a decrease in work function (4.77 to 4.54 eV) and lower threshold voltages.
Sono-photocatalytic production of hydrogen by interface modified metal oxide insulators.

PubMed

Senevirathne, Rushdi D; Abeykoon, Lahiru K; De Silva, Nuwan L; Yan, Chang-Feng; Bandara, Jayasundera

2018-07-01

Dielectric oxide materials are well-known insulators that have many applications in catalysis as well as in device manufacturing industries. However, these dielectric materials cannot be employed directly in photochemical reactions that are initiated by the absorption of UV-Vis photons. Despite their insensitivity to solar energy, dielectric materials can be made sono-photoactive even for low energy IR photons by modifications of the interfacial properties of dielectric materials by noble metals and metal oxides. In this investigation, by way of interface modification of dielectric MgO nanoparticles by Ag metal and Ag 2 O nanoparticles, IR photon initiated sono-photocatalytic activity of MgO is reported. The observed photocatalytic activity is found to be the synergic action of both IR light and sonication effect and sonication assisted a multi-step, sub-bandgap excitation of electrons in the MgO is proposed for the observed catalytic activity of Ag/Ag 2 O coated MgO nanoparticles. Our investigation reveals that other dielectric materials such as silver coated SiO 2 and Al 2 O 3 also exhibit IR active sono-photocatalytic activity. Copyright © 2018 Elsevier B.V. All rights reserved.
Laser damage threshold measurements of microstructure-based high reflectors

NASA Astrophysics Data System (ADS)

Hobbs, Douglas S.

2008-10-01

In 2007, the pulsed laser induced damage threshold (LIDT) of anti-reflecting (AR) microstructures built in fused silica and glass was shown to be up to three times greater than the LIDT of single-layer thin-film AR coatings, and at least five times greater than multiple-layer thin-film AR coatings. This result suggested that microstructure-based wavelength selective mirrors might also exhibit high LIDT. Efficient light reflection over a narrow spectral range can be produced by an array of sub-wavelength sized surface relief microstructures built in a waveguide configuration. Such surface structure resonant (SSR) filters typically achieve a reflectivity exceeding 99% over a 1-10nm range about the filter center wavelength, making SSR filters useful as laser high reflectors (HR). SSR laser mirrors consist of microstructures that are first etched in the surface of fused silica and borosilicate glass windows and subsequently coated with a thin layer of a non-absorbing high refractive index dielectric material such as tantalum pent-oxide or zinc sulfide. Results of an initial investigation into the LIDT of single layer SSR laser mirrors operating at 532nm, 1064nm and 1573nm are described along with data from SEM analysis of the microstructures, and spectral reflection measurements. None of the twelve samples tested exhibited damage thresholds above 3 J/cm2 when illuminated at the resonant wavelength, indicating that the simple single layer, first order design will need further development to be suitable for high power laser applications. Samples of SSR high reflectors entered in the Thin Film Damage Competition also exhibited low damage thresholds of less than 1 J/cm2 for the ZnS coated SSR, and just over 4 J/cm2 for the Ta2O5 coated SSR.
Circularly polarized antennas for active holographic imaging through barriers

DOEpatents

McMakin, Douglas L [Richland, WA; Severtsen, Ronald H [Richland, WA; Lechelt, Wayne M [West Richland, WA; Prince, James M [Kennewick, WA

2011-07-26

Circularly-polarized antennas and their methods of use for active holographic imaging through barriers. The antennas are dielectrically loaded to optimally match the dielectric constant of the barrier through which images are to be produced. The dielectric loading helps to remove barrier-front surface reflections and to couple electromagnetic energy into the barrier.
Structural, electrical properties and dielectric relaxations in Na+-ion-conducting solid polymer electrolyte.

PubMed

Arya, Anil; Sharma, A L

2018-04-25

In this paper, we have studied the structural, microstructural, electrical, dielectric properties and ion dynamics of a sodium-ion-conducting solid polymer electrolyte film comprising PEO 8 -NaPF 6 + x wt. % succinonitrile. The structural and surface morphology properties have been investigated, respectively using x-ray diffraction and field emission scanning electron microscopy. The complex formation was examined using Fourier transform infrared spectroscopy, and the fraction of free anions/ion pairs obtained via deconvolution. The complex dielectric permittivity and loss tangent has been analyzed across the whole frequency window, and enables us to estimate the DC conductivity, dielectric strength, double layer capacitance and relaxation time. The presence of relaxing dipoles was determined by the addition of succinonitrile (wt./wt.) and the peak shift towards high frequency indicates the decrease of relaxation time. Further, relations among various relaxation times ([Formula: see text]) have been elucidated. The complex conductivity has been examined across the whole frequency window; it obeys the Universal Power Law, and displays strong dependency on succinonitrile content. The sigma representation ([Formula: see text]) was introduced in order to explore the ion dynamics by highlighting the dispersion region in the Cole-Cole plot ([Formula: see text]) in the lower frequency window; increase in the semicircle radius indicates a decrease of relaxation time. This observation is accompanied by enhancement in ionic conductivity and faster ion transport. A convincing, logical scheme to justify the experimental data has been proposed.
Relationship between anisotropies of permeability, electrical conductivity, and dielectric permittivity, with application to the Ellenburger dolomite reservoir analog

NASA Astrophysics Data System (ADS)

Kutemi, Titilope F.

The steady-state flow technique was employed to measure the flow rate of clean dry air through thirty core plugs (approximately 1" diameter) of the Ellenburger dolomite, drilled normal and parallel to the dominant fractures. Porosity was estimated by the method of imbibition. Electrical parameters (electrical conductivity and dielectric permittivity) were calculated from electrical resistance and capacitance measured as a function of frequency (100 Hz, 120 Hz, 1 KHz, and 10 KHz) and saturation (dry/ambient and brine saturated conditions). Another set of permeability data obtained by the method of pressure decay on similar samples was used for correlation. Anisotropies of permeability and electromagnetic parameters were established. Empirical relations between porosity (phi), permeability (k), electrical conductivity (sigma), and dielectric permittivity (epsilon) were defined via cross-plots and linear regressions. Prediction of k from sigma and epsilon was attempted; k from sigma was modeled from a combination of the Archie's relation and the Carman-Kozeny relation. Anisotropic EM responses are sensitive to saturation. Anisotropies of conductivity and permeability were observed to be controlled by the pore micro-structure. Although the rock is fractured, the fracture density appears insufficient to dominate the effects of primary structures in these samples of the Ellenburger dolomite. Model-based prediction of permeability from conductivity is generally unreliable, and is attributed to the underlying assumptions of the models, which are not consistent with the properties of the samples used for this study. Permeability was not predictable from dielectric permittivity.
Selection of an anti-solvent for efficient and stable cesium-containing triple cation planar perovskite solar cells.

PubMed

Xiao, Meng; Zhao, Li; Geng, Min; Li, Yanyan; Dong, Binghai; Xu, Zuxun; Wan, Li; Li, Wenlu; Wang, Shimin

2018-06-19

The perovskite layer is a crucial component influencing high-performance perovskite solar cells (PSCs). In the one-step solution method, anti-solvents are important for obtaining smooth and uniform perovskite active layers. This work explored the effect of various anti-solvents on the preparation of triple cation perovskite active layers. In general, anti-solvents with low dielectric constants, low polarity, and low boiling point are suitable for the preparation of perovskite films. Microstructural and elemental analyses of the perovskite films were systematically conducted by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The photoelectric properties, carrier transfer, and recombination process in the PSCs were investigated using photocurrent-voltage characteristic curves and electrochemical impedance spectroscopy. Optimum performance was obtained when the anti-solvent was diethyl ether (DEE) and the ratio of the optimum amount of DEE to the volume of the precursor was 1 : 10. Meanwhile, we found that the partial replacement of formamidinium/methylammonium by cesium could increase the stability of the PSCs and enhance the power conversion efficiency from 15.49% to over 17.38%.
Microstructure evolution and tribological properties of acrylonitrile-butadiene rubber surface modified by atmospheric plasma treatment

NASA Astrophysics Data System (ADS)

Shen, Ming-xue; Zhang, Zhao-xiang; Peng, Xu-dong; Lin, Xiu-zhou

2017-09-01

For the purpose of prolonging the service life for rubber sealing elements, the frictional behavior of acrylonitrile-butadiene rubber (NBR) surface by dielectric barrier discharge plasma treatments was investigated in this paper. Surface microstructure and chemical composition were measured by atomic force microscopy, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy, respectively. Water contact angles of the modified rubber surface were also measured to evaluate the correlation between surface wettability and tribological properties. The results show that plasma treatments can improve the properties of the NBR against friction and wear effectively, the surface microstructure and roughness of plasma-modified NBR surface had an important influence on the surface tribological behavior, and the wear depth first decreased and then increased along with the change of plasma treatment time. It was found that the wettability of the modified surface was gradually improved, which was mainly due to the change of the chemical composition after the treatment. This study suggests that the plasma treatment could effectively improve the tribological properties of the NBR surface, and also provides information for developing wear-resistant NBR for industrial applications.
Cutting of optical materials by using femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Nolte, Stefan; Will, Matthias; Augustin, Markus; Triebel, Peter; Zoellner, Karsten; Tuennermann, Andreas

2001-11-01

In the past years, ultrashort pulse lasers have been established as precise and universal tools for the microstructuring of solid materials. Since thermal and mechanical influences are minimized, the application of this technology is also suitable for the structuring of optical materials and opens new possibilities. In this paper, the influence of pulse duration, pulse energy (fluence) and polarization on the cutting quality for glass and silicon will be discussed. As a concrete application, the cutting and micromarking of dielectric coated mirrors for high power fiber lasers will be highlighted.
Principles of dielectric blood coagulometry as a comprehensive coagulation test.

PubMed

Hayashi, Yoshihito; Brun, Marc-Aurèle; Machida, Kenzo; Nagasawa, Masayuki

2015-10-06

Dielectric blood coagulometry (DBCM) is intended to support hemostasis management by providing comprehensive information on blood coagulation from automated, time-dependent measurements of whole blood dielectric spectra. We discuss the relationship between the series of blood coagulation reactions, especially the aggregation and deformation of erythrocytes, and the dielectric response with the help of clot structure electron microscope observations. Dielectric response to the spontaneous coagulation after recalcification presented three distinct phases that correspond to (P1) rouleau formation before the onset of clotting, (P2) erythrocyte aggregation and reconstitution of aggregates accompanying early fibrin formation, and (P3) erythrocyte shape transformation and/or structure changes within aggregates after the stable fibrin network is formed and platelet contraction occurs. Disappearance of the second phase was observed upon addition of tissue factor and ellagic acid for activation of extrinsic and intrinsic pathways, respectively, which is attributable to accelerated thrombin generation. A series of control experiments revealed that the amplitude and/or quickness of dielectric response reflect platelet function, fibrin polymerization, fibrinolysis activity, and heparin activity. Therefore, DBCM sensitively measures blood coagulation via erythrocytes aggregation and shape changes and their impact on the dielectric permittivity, making possible the development of the battery of assays needed for comprehensive coagulation testing.
Dielectric properties and activation behavior of gadolinium doped nanocrystalline yttrium chromite

NASA Astrophysics Data System (ADS)

Sinha, R.; Basu, S.; Meikap, A. K.

2018-04-01

Gadolinium doped Yttrium Chromite nanoparticles are synthesized following sol-gel method. The formation of the nanoparticles are confirmed by XRD and TEM measurements. Dielectric permittivity and dielectric loss are estimated within the temperature range 298K to 523K and in the frequency range 20 Hz to 1 MHz. Dielectric permittivity follows the power law ɛ'(f) ∝ Tm. It is observed that the temperature exponent m increases with the decreasing frequency. The temperature variation of resistivity shows that the samples have semiconducting behavior. The activation energy is also measured.
Effects of Ti doping on the dielectric properties of HfO{sub 2} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pokhriyal, S.; Biswas, S., E-mail: drsomnathbiswas@gmail.com

2016-05-06

We report the effects of Ti doping on the dielectric properties of HfO{sub 2} [Hf{sub 1-x}Ti{sub x}O{sub 2} (x = 0.2-0.8)] nanoparticles at room temperature. The Hf{sub 1-x}Ti{sub x}O{sub 2} nanoparticles were synthesized by a wet chemical process. The structural and morphological properties of the derived samples were analyzed with X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM). Impedance analysis was performed in pelletized samples in the frequency range of 1 MHz to 1 GHz. The obtained results were analyzed in correlation with microstructure and doping concentration in the derived samples. The averagemore » size of the Hf{sub 1-x}Ti{sub x}O{sub 2} nanoparticles is typically in the range of 4-8 nm depending on the processing temperature. The Hf{sub 1−x}Ti{sub x}O{sub 2} nanoparticles show reduction in crystallinity with the increase in Ti doping. The dielectric constants of the derived samples decrease with the increase in frequency. The ac-conductivity in the samples increases with the increase in frequency irrespective of Ti concentration and shows significant drop with the increase in Ti concentration at all frequencies.« less
Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-05-01

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopymore » with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less
Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-01-01

Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopymore » mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less
Effect of calcination temperature on microstructure, dielectric, magnetic and optical properties of Ba0.7La0.3Fe11.7Co0.3O19 hexaferrites

NASA Astrophysics Data System (ADS)

Kaur, Talwinder; Kaur, Barjinder; Bhat, Bilal H.; Kumar, Sachin; Srivastava, A. K.

2015-01-01

M-type barium hexaferrite Ba0.7La0.3Fe11.7Co0.3O19 (BaLCM) powder, synthesized using sol gel auto combustion method, heat treated at 700, 900, 1100 and 1200 °C. X ray diffraction (XRD) powder patterns of heat treated samples show the formation of pure phase of M-type hexaferrite after 700 °C. Thermo gravimetric analysis (TGA) reveals that the weight loss of BaLCM becomes constant after 680 °C. The presence of two prominent peaks, at 432 cm-1 and 586 cm-1 in Fourier Transform Infrared Spectroscopy (FT-IR) spectra, gives the idea of formation of M-type hexaferrites. The M-H curve obtained from Vibrating Sample Magnetometer (VSM) were used to calculate saturation magnetization (MS), retentivity (Mr), squareness ration (SR) and coercivity (Hc). The maximum value of coercivity (5602 Oe) is found at 900 °C. The band gap dependency on temperature was studied using UV-vis NIR spectroscopy. The dielectric constant has been found to be high at low frequency but it decreases with increase in frequency. Such kind of dielectric behavior is explained on the basis of Koop's phenomenological theory and Maxwell Wagner theory.

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

PubMed

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.
Synthesis of BaTiO3 and Ba(ZrxTi1-X)O3 by using the soft combustion method

NASA Astrophysics Data System (ADS)

Ahmad, Atiqah; Razak, Khairunisak Abdul

2017-07-01

In this work, barium titanate, BaTiO3 (BT) and Zr doped BT, BaZrxTi1-xO3 (BZT) with powders were successfully produced using the soft combustion method. Barium nitrate and titanium (IV) isopropoxide were used as the starting materials while zirconium (IV) oxynitrate hydrate as the doping precursors, and glycine as the combustion agent. The produced powders were pressed into 12 mm diameter pellets by using 150 MPa cold press. The effect of Zr dopant in BT was studied with molar ratio of x = 0.00, 0.03, 0.05, 0.08 and 0.10. The phase presence was identified using X-ray diffractometer. Morphology of powders and sintered pellets was observed using a scanning electron microscope. Density of the sintered pellets was measured by using Archimedes' principle, while dielectric properties were analysed by using an LCR meter. Pure perovskite BT and BZT structure were obtained after sintering at 1400 °C for 5 h. BZT with x = 0.03 has grain size of 3.9 µm and shows the highest dielectric constant of 525, compared to undoped BT that has the average grain size of 4.2 µm with dielectric constant 223. The results is in agreement with microstructure observation and density of the sample.
Ferroelectric and dielectric properties of BaTi0.9Zr0.1O3 doped with Li0.5Fe2.5O4 ceramics

NASA Astrophysics Data System (ADS)

Gajula, Ganapathi Rao; Buddiga, Lakshmi Rekha; Chidambara Kumar, K. N.; Ch, Arun Kumar; Samatha, K.; Kokkiragadda, Sreeramachandra Murthy; Dasari, Madhava Prasad

2018-06-01

We have prepared a composite BaTi0.9Zr0.1O3 (BTZr) doped with Li0.5Fe2.5O4 (LF) having chemical formulae (1- x) BTZr + (x) LF (x=0, 0.05, 0.1 and 0.15) conventional solid state reaction technique. We have sintered the grown composites at 1150 °C for 3 h. We have characterized the grown composites using XRD, FESEM, P-E loop tracer and LCR meter. The XRD measurements reveal the tetragonal nature of the composites. The morphological studies reveal that the composite exhibits dense microstructure with small pores. The P-E loops confirm that the composites exhibit remnant polarization and the coercive field increases with increasing concentration of Lithium Ferrite (LF). We have studied dielectric property of the composites by varying the temperature of the sample from 30 °C to 500 °C at 1 kHz, 10 kHz and also by varying the frequency from 1 Hz to 10 MHz at 30 °C. The dielectric property of BTZr has increased after doping LF in BTZr which reveals the enhancement of electrical properties of the grown composite.
Electric, Magnetic, and Magnetoelectric Properties of Yttrium-Containing BaY0.025Ti0.9625O3-SrFe12O19 Composite

NASA Astrophysics Data System (ADS)

Rather, Mehraj ud Din; Samad, Rubiya; Want, Basharat

2018-03-01

The physical properties of BaY0.025Ti0.9625O3, SrFe12O19, and 0.90BaY0.025Ti0.9625O3-0.10 SrFe12O19 composite have been studied. The proposed composite was synthesized by solid-state reaction method from yttrium barium titanate processed by solid-state reaction and strontium hexaferrite obtained by a sol-gel process. Microstructural analysis revealed monophasic grains for yttrium barium titanate phase, while loosely packed biphasic structure was observed for the composite. Powder x-ray analysis showed that the individual phases retained their crystal structure in the composite, without formation of any new additional phase. Measurement of magnetic hysteresis loops at room temperature indicated that the magnetic parameters of the composite were diluted by the presence of the ferroelectric phase. The ferroelectric hysteresis of yttrium barium titanate confirmed the ferroelectric transition at 119°C. Meanwhile, the symmetrical ferroelectric loops observed at different fields established the ferroelectric nature of the composite. Improved dielectric properties and low dielectric losses were observed due to yttrium doping in the composite. The diffuseness of the ferroelectric transitions for the composite was confirmed by the Curie-Weiss law. Activation energy calculations revealed the charge-hopping conduction mechanism in the composite. Magnetodielectric studies confirmed that the overall magnetocapacitance in the composite exhibited combined effects of magnetoresistance and magnetoelectric coupling.
Electrical conductivity and dielectric relaxation of 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile

NASA Astrophysics Data System (ADS)

El-Menyawy, E. M.; Zedan, I. T.; Nawar, H. H.

2014-03-01

The electrical and dielectric properties of the synthesized 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile (AHNA) have been studied. The direct and alternating current (DC and AC) conductivities and complex dielectric constant were investigated in temperature range 303-403 K. The AC conductivity and dielectric properties of AHNA were investigated over frequency range 100 Hz-5 MHz. From DC and AC measurements, electrical conduction is found to be a thermally activated process. The frequency-dependent AC conductivity obeys Jonscher's universal power law in which the frequency exponent decreases with increasing temperature. The correlated barrier hopping (CBH) is the predominant model for describing the charge carrier transport in which the electrical parameters are evaluated. The activation energy is found to decrease with increasing frequency. The behaviors of dielectric and dielectric loss are discussed in terms of a polarization mechanism. The dielectric loss shows frequency power law from which the maximum barrier height is determined as 0.19 eV in terms of the Guintini model.
Effect of trivalent iron substitution on structure and properties of PLZT ceramics

NASA Astrophysics Data System (ADS)

Dutta, S.; Choudhary, R. N. P.

2008-02-01

Polycrystalline samples of Fe-modified PLZT (lead lanthanum zirconate titanate) are prepared by a mixed-oxide reaction technique. The formation of the compound has been confirmed by X-ray powder diffraction studies. The unit cell structure of the material has been found to be rhombohedral. Fourier-transform infrared reflection (FTIR) spectra have been recorded to correspond the structural changes associated with the phase formation. The effects of Fe concentration on the microstructure and dielectric constant of PLZT materials have been investigated. The ferroelectric phase transition of PLFZT materials is studied using dielectric measurements, which shows a shift in the transition temperature towards the higher-temperature side with increased Fe ion concentration. The piezoelectric constants of this system are investigated by the same way of changed contents of Fe ion in the main PLZT compound. The optimum values of Qm, kp, and d33 are 73, 0.32 and 406. The electrical conductivity increases with the increase in Fe ion concentration.
Effect of annealing time, weight pressure and cobalt doping on the electrical and magnetic behavior of barium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samuvel, K., E-mail: kssamuvel@gmail.com; Ramachandran, K., E-mail: ramach76@yahoo.com

2016-05-06

BaTi{sub 0.5}CO{sub 0.5}O{sub 3} (BTCO) nanoparticles were prepared by the solid state reaction technique using different starting materials and the microstructure examined by XRD, FESEM, BDS and VSM. X-ray diffraction and electron diffraction patterns showed that the nanoparticles were the tetragonal BTCO phase. The BTCO nanoparticles prepared from the starting materials of as prepared titanium-oxide, Cobalt -oxide and barium carbonate have spherical grain morphology, an average size of 65 nm and a fairly narrow size distribution. The nano-scale presence and the formation of the tetragonal perovskite phase as well as the crystallinity were detected using the mentioned techniques. Dielectric properties ofmore » the samples were measured at different frequencies. Broadband dielectric spectroscopy is applied to investigate the electrical properties of disordered perovskite-like ceramics in a wide temperature range. The doped BTCO samples exhibited low loss factor at 1 kHz and 1 MHz frequencies respectively.« less
Effect of Yb substitution on room temperature magnetic and dielectric properties of bismuth ferrite nanoparticles

NASA Astrophysics Data System (ADS)

Remya, K. P.; Amirthapandian, S.; Manivel Raja, M.; Viswanathan, C.; Ponpandian, N.

2016-10-01

Effect of the Yb dopant on the structural, magnetic, and electrical properties of the multiferroic BiFeO3 have been studied. The structural properties of sol-gel derived Bi1-xYbxFeO3 (x = 0.0, 0.1, and 0.2) nanoparticles reveal the formation of a rhombohedrally distorted perovskite in XRD and a reduction in the average grain size have been observed with an increase in the Yb concentration. Microstructural studies exhibited the formation of sphere like morphology with decreasing particle size with increase in the dopant concentration. The effective doping also resulted in larger magnetization as well as coercivity with the maximum of 257 Oe and 1.76 emu/g in the Bi0.8Yb0.2FeO3 nanoparticles. Ferroelectric as well as dielectric properties of the nanoparticles were also improved on doping. The best results were obtained for the BiFeO3 nanoparticles having Yb concentration x = 0.2.
Dielectric and ferroelectric properties of Ba0.87Ca0.10La0.03Ti1-xSnxO3 lead-free ceramics

NASA Astrophysics Data System (ADS)

Chen, Zhi-hui; Li, Zhi-wei; Fang, Chang; Qiu, Jian-hua; Ding, Jian-ning; Zhu, Wei-qin; Xu, Jiu-jun

2017-12-01

Ba0.87Ca0.10La0.03Ti1-xSnxO3 (BCLTS) piezoelectric lead-free ceramics were fabricated by conventional solid-state sintering process at 1480 °C. The effects of Sn4+ substitution on microstructure and electrical properties of the ceramics were researched. All samples show a pure perovskite structure with no secondary phase, and the coexistence of orthorhombic phase and tetragonal phase in the composition range of x = 0.06-0.10 is identified in the XRD pattern. Average grain size decreases with the increase of Sn content in the BCLTS samples. The BCLTS ceramics exhibit excellent piezoelectric properties and ferroelectric properties with d33 = 501pC/N and kp = 45.6% at x = 0.10, and Pr = 9.87 μC/cm2 at x = 0.06. The analysis on the temperature dependence of dielectric permittivity approved the diffuse relaxor ferroelectric feature for all the BCLTS samples.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Richa; Tandon, R. P., E-mail: ram-tandon@hotmail.com

In the present work, (1-x)Ba{sub 0.95}Sr{sub 0.05}TiO{sub 3}-(x)CoFe{sub 1.8}Mn{sub 0.2}O{sub 4} composites are prepared by standard solid state reaction method. The X-ray diffraction measurement of the composites shows that both the phases coexist in the composite, individually. The morphology of the composites were examined by field emission scanning electron microscopy and reveals homogeneous microstructure with two types of grains, smaller grains of the Ba{sub 0.95}Sr{sub 0.05}TiO{sub 3} (BST) and bigger grains of the CoFe{sub 1.8}Mn{sub 0.2}O{sub 4} (CFM). The dielectric studies show that all the composites exhibit dispersion in the lower frequency region attributable to the interfacial polarization. In addition,more » at lower frequencies, the dielectric constant (ε´) is found to increase with increase in CFM content in the composites. The ferromagnetic properties of the composites improve with the increase in the CFM content.« less
Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

NASA Astrophysics Data System (ADS)

Schwartz, Gregor; Tee, Benjamin C.-K.; Mei, Jianguo; Appleton, Anthony L.; Kim, Do Hwan; Wang, Huiliang; Bao, Zhenan

2013-05-01

Flexible pressure sensors are essential parts of an electronic skin to allow future biomedical prostheses and robots to naturally interact with humans and the environment. Mobile biomonitoring in long-term medical diagnostics is another attractive application for these sensors. Here we report the fabrication of flexible pressure-sensitive organic thin film transistors with a maximum sensitivity of 8.4 kPa-1, a fast response time of <10 ms, high stability over >15,000 cycles and a low power consumption of <1 mW. The combination of a microstructured polydimethylsiloxane dielectric and the high-mobility semiconducting polyisoindigobithiophene-siloxane in a monolithic transistor design enabled us to operate the devices in the subthreshold regime, where the capacitance change upon compression of the dielectric is strongly amplified. We demonstrate that our sensors can be used for non-invasive, high fidelity, continuous radial artery pulse wave monitoring, which may lead to the use of flexible pressure sensors in mobile health monitoring and remote diagnostics in cardiovascular medicine.
Conventional and two step sintering of PZT-PCN ceramics

NASA Astrophysics Data System (ADS)

Keshavarzi, Mostafa; Rahmani, Hooman; Nemati, Ali; Hashemi, Mahdieh

2018-02-01

In this study, PZT-PCN ceramic was made via sol-gel seeding method and effects of conventional sintering (CS) as well as two-step sintering (TSS) were investigated on microstructure, phase formation, density, dielectric and piezoelectric properties. First, high quality powder was achieved by seeding method in which the mixture of Co3O4 and Nb2O5 powder was added to the prepared PZT sol to form PZT-PCN gel. After drying and calcination, pyrochlore free PZT-PCN powder was synthesized. Second, CS and TSS were applied to achieve dense ceramic. The optimum temperature used for 2 h of conventional sintering was obtained at 1150 °C; finally, undesired ZrO2 phase formed in CS procedure was removed successfully with TSS procedure and dielectric and piezoelectric properties were improved compared to the CS procedure. The best electrical properties obtained for the sample sintered by TSS in the initial temperature of T 1 = 1200 °C and secondary temperature of T 2 = 1000 °C for 12 h.
Dielectric and Energy Storage Properties of Ba0.65Sr0.35TiO3 Ceramics Modified by BiNbO4

NASA Astrophysics Data System (ADS)

Zheng, Yi; Zhang, Jihua; Wei, Meng; Dong, Xiangxiang; Huang, Jiapeng; Wu, Kaituo; Chen, Hongwei

2018-02-01

(1 - x) (Ba0.65Sr0.35TiO3)-xBiNbO4 (x = 0.0-0.15) ceramic were prepared by solid-state reaction method. The phase composition, microstructure, dielectric properties, polarization-electric field, breakdown strength and energy storage behaviors for the BiNbO4-modified Ba0.65Sr0.35TiO3 ceramics were investigated. With the addition of BiNbO4, the remnant polarization and saturation polarization decreased and the nonlinearity was suppressed. When x = 0.07, the maximum recoverable energy storage achieved was 0.5 J/cm3, 1.5 times that of un-doped Ba0.65Sr0.35TiO3 ceramics, with an efficiency of 96.89% and a breakdown electric field reaching 15.3 kV/mm. Therefore, BiNbO4 doping could improve the energy storage properties of Ba0.65Sr0.35TiO3 for high-energy pulse capacitor application.
Comparative Study of Ferroelectric and Piezoelectric Properties of BNT-BKT-BT Ceramics near the Phase Transition Zone

PubMed Central

Fernandez-Benavides, David Andres; Gutierrez-Perez, Aixa Ibeth; Benitez-Castro, Angelica Maria; Ayala-Ayala, Maria Teresa; Moreno-Murguia, Barbara

2018-01-01

We report a comprehensive comparative study of ferroelectric and piezoelectric properties of BNT-BKT-BT ceramics through the MPB (morphotropic phase boundary) zone, from the rhombohedral to the tetragonal phases in the system (97.5−x)(Bi0.5Na0.5)TiO3 + x(Bi0.5K0.5)TiO3 + 2.5(BaTiO3), where x = 0 to 24.5 mol %. The structural transitions were studied by XRD patterns and Raman spectra. The MPB was confirmed between x = 10 and 12.5 mol % BKT. The dielectric/ferroelectric/piezoelectric properties of the BNT-BKT-BT system are maximized in the MPB region exhibiting a dielectric constant of 1506, a remanent polarization of 34.4 μC/cm2, a coercive field = 36.9 kV/cm, and piezoelectric values of d33 = 109 pC/N, kt = 0.52, and kp = 0.24. Changes in microstructure as a function of BKT content are also presented and discussed. PMID:29494486
EFFECT OF MICROWAVE SINTERING ON THE STRUCTURAL AND ELECTRICAL PROPERTIES OF Li0.51Zn0.2Ti0.2V0.01Fe2.08O4 FERRITE

NASA Astrophysics Data System (ADS)

Maisnam, Mamata; Phanjoubam, Sumitra

2013-07-01

Effect of microwave sintering on the structural and electrical properties of Li+0.51Zn2+0.2Ti4+0.2V5+0.01Fe3+2.08O2-4 is studied in comparison with that of conventionally sintered one. The technique is advantageous in terms of significantly reduced size of microwave kilns and rapid heating compared to the cumbersome and slow heating of conventional sintering technology. Microwave sintering produced enhanced densification and much finer microstructures. The DC resistivity is markedly increased. Microwave sintering reduces chances of evaporation of lithium and oxygen during sintering of lithium based ferrites resulting in formation of lesser ferrous ions. This has profound effect on the electrical properties of microwave sintered ferrites. The dielectric constant is significantly reduced possibly due to reduced space charge polarization and the temperature dependence of the dielectric properties are also studied.
Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

NASA Astrophysics Data System (ADS)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-11-01

Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.
Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring.

PubMed

Schwartz, Gregor; Tee, Benjamin C-K; Mei, Jianguo; Appleton, Anthony L; Kim, Do Hwan; Wang, Huiliang; Bao, Zhenan

2013-01-01

Flexible pressure sensors are essential parts of an electronic skin to allow future biomedical prostheses and robots to naturally interact with humans and the environment. Mobile biomonitoring in long-term medical diagnostics is another attractive application for these sensors. Here we report the fabrication of flexible pressure-sensitive organic thin film transistors with a maximum sensitivity of 8.4 kPa(-1), a fast response time of <10 ms, high stability over >15,000 cycles and a low power consumption of <1 mW. The combination of a microstructured polydimethylsiloxane dielectric and the high-mobility semiconducting polyisoindigobithiophene-siloxane in a monolithic transistor design enabled us to operate the devices in the subthreshold regime, where the capacitance change upon compression of the dielectric is strongly amplified. We demonstrate that our sensors can be used for non-invasive, high fidelity, continuous radial artery pulse wave monitoring, which may lead to the use of flexible pressure sensors in mobile health monitoring and remote diagnostics in cardiovascular medicine.
Ag induced electromagnetic interference shielding of Ag-graphite/PVDF flexible nanocomposites thinfilms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumaran, R.; Alagar, M.; Dinesh Kumar, S.

We report Ag nanoparticle induced Electromagnetic Interference (EMI) shielding in a flexible composite films of Ag nanoparticles incorporated graphite/poly-vinylidene difluoride (PVDF). PVDF nanocomposite thin-films were synthesized by intercalating Ag in Graphite (GIC) followed by dispersing GIC in PVDF. The X-ray diffraction analysis and the high-resolution transmission electron microscope clearly dictate the microstructure of silver nanoparticles in graphite intercalated composite of PVDF matrix. The conductivity values of nanocomposites are increased upto 2.5 times when compared to neat PVDF having a value of 2.70 S/cm at 1 MHz. The presence of Ag broadly enhanced the dielectric constant and lowers the dielectric loss of PVDFmore » matrix proportional to Ag content. The EMI shielding effectiveness of the composites is 29.1 dB at 12.4 GHz for the sample having 5 wt. % Ag and 10 wt. % graphite in PVDF.« less
Practical microstructured and plasmonic terahertz waveguides

NASA Astrophysics Data System (ADS)

Markov, Andrey

The terahertz frequency range, with frequencies lying between 100 GHz and 10 THz, has strong potential for various technological and scientific applications such as sensing, imaging, communications, and spectroscopy. Most terahertz (THz) sources are immobile and THz systems use free-space propagation in dry air where losses are minimal. Designing efficient THz waveguides for flexible delivery of broadband THz radiation is an important step towards practical applications of terahertz techniques. THz waveguides can be very useful on the system integration level when used for connection of the diverse THz point devices, such as sources, filters, sensor cells, detectors, etc. The most straightforward application of waveguides is to deliver electromagnetic waves from the source to the point of detection. Cumbersome free-space optics can be replaced by waveguides operating in the THz range, which could lead to the development of compact THz time domain spectroscopy systems. Other promising applications of THz waveguides are in sensing and imaging. THz waveguides have also been shown to operate in subwavelength regimes, offering mode confinement in waveguide structures with a size smaller than the diffraction limit, and thus, surpassing the resolution of free-space THz imaging systems. In order to design efficient terahertz waveguides, the frequency dependent loss and dispersion of the waveguide must be minimized. A possible solution would be to increase the fraction of mode power propagating through air. In this thesis, the usage of planar porous air/dielectric waveguides and metal wire/dielectric hybrid terahertz fibers will be discussed. First, I present a novel design of a planar porous low-loss waveguide, describe its fabrication, and characterize it in view of its potential applications as a low-loss waveguide and sensor in the THz spectral range. The waveguide structure features a periodic sequence of layers of thin (25-50 mum) polyethylene film that are separated by low-loss air layers of comparable thickness. A large fraction of the modal fields in these waveguides is guided in the low-loss air region, thus effectively reducing the waveguide transmission losses. I consider that such waveguides can be useful not only for low-loss THz wave delivery, but also for sensing of biological and chemical specimens in the terahertz region, by placing the recognition elements directly into the waveguide microstructure. The main advantage of the proposed planar porous waveguide is the convenient access to its optical mode, since the major portion of THz power launched into such a waveguide is confined within the air layers. Moreover, small spacing between the layers promotes rapid loading of the analyte into the waveguide due to strong capillary effect (< 1 s filling of a 10 cm long waveguide with an analyte). The transmission and absorption properties of such waveguides have been investigated both experimentally using THz-TDS spectroscopy and theoretically using finite element software. The modal refractive index of porous waveguides is smaller compared to pure polymer and it is easy to adjust by changing the air spacing between the layers, as well as the number of layers in the core. The porous waveguide exhibits considerably smaller transmission losses than bulk material. In the following chapters I review another promising approach towards designing of low-loss, low-dispersion THz waveguides. The hybrid metal/dielectric waveguides use a plasmonic mode guided in the gap between two parallel wires that are, in turn, encapsulated inside a low-loss, low-refractive index, micro-structured cladding that provides mechanical stability and isolation from the environment. I describe several promising techniques that can be used to encapsulate the two-wire waveguides, while minimizing the negative impact of dielectric cladding on the waveguide optical properties. In particular, I detail the use of low-density foams and microstructured plastic claddings as two enabling materials for the two-wire waveguide encapsulation. The hybrid fiber design is more convenient for practical applications than a classic two metal wire THz waveguide as it allows direct manipulations of the fiber without the risk of perturbing its core-guided mode. I present a detailed analysis of the modal properties of the hybrid metal/dielectric waveguides, compare them with the properties of a classic two-wire waveguide, and then present strategies for the improvement of hybrid waveguide performance by using higher cladding porosity or utilizing inherently porous cladding material. I study coupling efficiency into hybrid waveguides and conclude that it can be relatively high (>50%) in the broad frequency range ˜0.5 THz. Not surprisingly, optical properties of such fibers are inferior to those of a classic two-wire waveguide due to the presence of lossy dielectric near an inter-wire gap. At the same time, composite fibers outperform porous fibers of the same geometry both in bandwidth of operation and in lower dispersion. I demonstrate that hybrid metal/dielectric porous waveguides can have a very large operational bandwidth, while supporting tightly confined, air-bound modes both at high and low frequencies. This is possible as, at higher frequencies, hybrid fibers can support ARROW-like low-loss air-bound modes, while changing their guidance mechanism to plasmonic confinement in the inter-wire air gap at lower frequencies. Finally, I describe an intriguing resonant property of some hybrid plasmonic modes of metal / dielectric waveguides that manifests itself in the strong frequency dependent change in the modal confinement from dielectric-bound to air-bound. I discuss how this property can be used to construct THz refractometers. Introduction of even lossless analytes into the fiber core leads to significant changes in the modal losses, which is used as a transduction mechanism. The resolution of the refractometer has been investigated numerically as a function of the operation frequency and the geometric parameters of the fiber. With a refractive index resolution on the order of ˜10-3 RIU, the composite fiber-based sensor is capable of identifying various gaseous analytes and aerosols or measuring the concentration of dust particles in the air.
Active tuning of high-Q dielectric metasurfaces

DOE PAGES

Parry, Matthew; Komar, Andrei; Hopkins, Ben; ...

2017-08-02

Here, we demonstrate the active tuning of all-dielectric metasurfaces exhibiting high-quality factor (high-Q) resonances. The active control is provided by embedding the asymmetric silicon meta-atoms with liquid crystals, which allows the relative index of refraction to be controlled through heating. It is found that high quality factor resonances (Q = 270 ± 30) can be tuned over more than three resonance widths. Our results demonstrate the feasibility of using all-dielectric metasurfaces to construct tunable narrow-band filters.

Application of the compensated arrhenius formalism to dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2009-12-17

The temperature dependence of the dielectric rate constant, defined as the reciprocal of the dielectric relaxation time, is examined for several groups of organic solvents. Early studies of linear alcohols using a simple Arrhenius equation found that the activation energy was dependent on the chain length of the alcohol. This paper re-examines the earlier data using a compensated Arrhenius formalism that assumes the presence of a temperature-dependent static dielectric constant in the exponential prefactor. Scaling temperature-dependent rate constants to isothermal rate constants so that the dielectric constant dependence is removed results in calculated energies of activation E(a) in which there is a small increase with chain length. These energies of activation are very similar to those calculated from ionic conductivity data using compensated Arrhenius formalism. This treatment is then extended to dielectic relaxation data for n-alkyl bromides, n-nitriles, and n-acetates. The exponential prefactor is determined by dividing the temperature-dependent rate constants by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the static dielectric constant places the data on a single master curve for each group of solvents.
Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material

NASA Astrophysics Data System (ADS)

Jedema, Friso; in `t Zandt, Micha; Wolters, Rob; Gravesteijn, Dirk

2011-02-01

The crystallization properties of as-deposited and laser written amorphous marks of doped Sb2Te phase change material are found to be only dependent on the top dielectric layer. A ZnS:SiO2 top dielectric layer yields a higher crystallization temperature and a larger crystal growth activation energy as compared to a SiO2 top dielectric layer, leading to superior data retention times at ambient temperatures. The observed correlation between the larger crystallization temperatures and larger crystal growth activation energies indicates that the viscosity of the phase change material in the amorphous state is dependent on the interfacial energy between the phase change material and the top dielectric layer.
Structural, electrical properties and dielectric relaxations in Na+-ion-conducting solid polymer electrolyte

NASA Astrophysics Data System (ADS)

Arya, Anil; Sharma, A. L.

2018-04-01

In this paper, we have studied the structural, microstructural, electrical, dielectric properties and ion dynamics of a sodium-ion-conducting solid polymer electrolyte film comprising PEO8-NaPF6+ x wt. % succinonitrile. The structural and surface morphology properties have been investigated, respectively using x-ray diffraction and field emission scanning electron microscopy. The complex formation was examined using Fourier transform infrared spectroscopy, and the fraction of free anions/ion pairs obtained via deconvolution. The complex dielectric permittivity and loss tangent has been analyzed across the whole frequency window, and enables us to estimate the DC conductivity, dielectric strength, double layer capacitance and relaxation time. The presence of relaxing dipoles was determined by the addition of succinonitrile (wt./wt.) and the peak shift towards high frequency indicates the decrease of relaxation time. Further, relations among various relaxation times ({{τ }{{\\varepsilon \\prime}}}>~{{τ }tanδ }>{{τ }z}>{{τ }m} ) have been elucidated. The complex conductivity has been examined across the whole frequency window; it obeys the Universal Power Law, and displays strong dependency on succinonitrile content. The sigma representation ({{σ }\\prime\\prime}~versus~{{σ }\\prime} ) was introduced in order to explore the ion dynamics by highlighting the dispersion region in the Cole–Cole plot ({{\\varepsilon }\\prime\\prime}~versus~{{\\varepsilon }\\prime} ) in the lower frequency window; increase in the semicircle radius indicates a decrease of relaxation time. This observation is accompanied by enhancement in ionic conductivity and faster ion transport. A convincing, logical scheme to justify the experimental data has been proposed.
Electrical and optical properties of NdAlO{sub 3} synthesized by an optimized combustion process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harilal, Midhun; Faculty of Industrial Sciences and Technology, Universiti Malaysia Pahang, 26300 Kuantan, Pahang; Nair, V. Manikantan

2014-04-01

Nanocrystals of neodymium aluminate (NdAlO{sub 3}) are synthesized using an optimized single step auto-ignition citrate complex combustion process. The combustion product was characterized by X-ray diffraction, transmission electron microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and Ultraviolet–visible reflection spectroscopy. The combustion product is single phase and composed of aggregates of nanocrystals of sizes in the range 20–40 nm. The NdAlO{sub 3} crystallized in rhombohedral perovskite structure with lattice parameters a = 5.3223 Å and c = 12.9292 Å. The absorption spectrum of the NdAlO{sub 3} nanocrystals shows characteristic absorption bands of the Nd atom. The polycrystalline fluffy combustion product ismore » sintered to high density (∼ 97%) at ∼ 1450 °C for 4 h and the microstructure was characterized by scanning electron microscopy. The electrical properties of the sintered product were studied using dielectric measurements. The sintered NdAlO{sub 3} has a dielectric constant (ε{sub r}) and a dielectric loss (tan δ) of 21.9 and ∼ 10{sup −3} at 5 MHz, respectively. - Highlights: • NdAlO{sub 3} nanocrystals were synthesized through a citrate combustion process. • The nanocrystals were sintered to ∼ 97% of theoretical density. • The materials were characterized using a number of analytical techniques. • Nanostructured NdAlO{sub 3} showed crystal field splitting of Nd ions. • Dielectric properties of the sintered NdAlO{sub 3} ceramics were studied.« less
Electrochemical and physical properties of electroplated CuO thin films.

PubMed

Dhanasekaran, V; Mahalingam, T

2013-01-01

Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.
High-frequency dielectric study of proustite crystals Ag3AsS3

NASA Astrophysics Data System (ADS)

Bordovsky, V. A.; Gunia, N. Yu; Castro, R. A.

2014-12-01

The dielectric properties of the crystals proustite in the frequency of 106-109 Hz and a temperature range of 173 to 473 K were studied. The dispersion of the dielectric parameters indicates the existence of non-Debye relaxation mechanism correlates with structural changes in the phase transition region. The charge transfer is temperature activated with an activation energy of 2.40 ± 0.01 eV.
III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

DOE PAGES

Liu, Sheng; Keeler, Gordon A.; Reno, John L.; ...

2016-06-10

We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.
PVDF-based copolymers, terpolymers and their multi-component material systems for capacitor applications

NASA Astrophysics Data System (ADS)

Chu, Baojin

Miniature of power electronics, scaling-down of microelectronics and other electrical and electronic systems, and development of many technologies (such as hybrid vehicles or implantable heart defibrillators) require capacitors with high energy density to improve the weight and volume efficiency of the whole system. Various capacitor technologies are investigated to meet the requirements of developing future technologies. Among these technologies, polymer film capacitor technology is one of the most promising. Besides high energy density, polymer-based capacitors possess the merits of high power density, low loss, high reliability (self-healing), easy processing, and feasibility (in size, shape and energy level). Due to the ferroelectricity of polyvinylidene fluoride (PVDF)-based polymers, they exhibit much higher polarization response under an electric field, in comparison with other linear dielectric polymers for capacitor applications. The maximum polarization level of PVDF-based polymers can be as high as 0.1 C/m2 and the breakdown field can be higher than 600 MV/m. An estimated energy density of around 30 J/cm3 can be expected in this class of materials. However, this value is much higher than the energy density that can be achieved in the PVDF homopolymer and the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymers due to the polarization hysteresis in these polymers. Therefore, in this thesis, PVDF-based polymer materials were investigated and developed to approach this expected energy density by various strategies. An energy density of higher than 24 J/cm 3, which is close to the predicted value, was found in PVDF-based copolymers. Recently, the poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) terpolymer was developed in Prof. Qiming Zhang's group. Previous works have shown that incorporation of CTE into P(VDF-TrFE) copolymers, in which bulky CFE acts as a defect, could convert the copolymer into relaxor ferroelectrics. P(VDF-TrFE-CFE) terpolymers possess a high dielectric constant (larger than 50 at 1 kHz) at room temperature and excellent electromechanical properties. Here, the P(VDF-TrFE-CFE) terpolymers were studied as dielectric materials for capacitor applications. The electrical, thermal and microstructure characterizations were performed on the terpolymers. The terpolymers exhibit a high breakdown field (higher than 400 MV/m) and energy density (larger than 9 J/cm 3). The energy discharge characteristics of the terpolymer were studied by directly discharging the stored energy in the terpolymers to a load resistor. Due to the highly field-dependent nonlinear and frequency dependent dielectric response of the terpolymers, the discharge energy density and equivalent series resistance strongly depend on the load resistor and discharge speed. This study found that for high energy density dielectric materials, a very high dielectric constant might not be an advantage. In the case of terpolymers, this leads to early polarization saturation, i.e., polarization response saturates under an electric field much lower than the breakdown field and causes lower than expected energy density. Due to the dielectric nonlinearity and early saturation of polarization, the energy density of the terpolymers increases linearly with the applied electric fields. It was also found that the polymer-metal interface played an important role for conduction and the breakdown field in the terpolymers, which was related to the charge injection from the metal to the polymer. Due to highly nonlinear dielectric behavior and early polarization saturation in the terpolymers, it was proposed that a high dielectric constant might not be desirable to obtain high energy density. Poly(vinylidene fluoride-chlorotrifluoroethylene) (P(VDFCTFE), 10, 15 and 20 wt% CTFE) and Poly(vinylidene fluoride-hexafluoropropylene) (P(VDF-HFP), 10 and 12 wt% HFP) copolymers, which possess a much lower dielectric constant (about 12 at 1 kHz at room temperature), were further investigated for dielectric materials of high energy density. Due to the lower dielectric constant, the early polarization saturation was avoided and these polymers showed a very high breakdown field and energy density. For the P(VDF-CTFE) copolymer with 15 wt% CTFE, an energy density of higher than 24 J/cm 3 at an electric field higher than 650 MV/m could be obtained. Based on thermal and microstructure studies, the high energy density was found to be caused by the structural modification of PVDF by bulky CTFE or HFP, which also act as defects, similar to the terpolymers. The discharge behavior of the copolymers mainly relies on the load resistors, suggesting that the copolymers have lower equivalent series resistance. Multi-component material system based on current available materials was found to be a useful strategy to tailor and improve the performance of dielectric materials. Nanocomposites composed of the P(VDF-TrFE-CFE) terpolymers and ZrO2 or TiO2 nanoparticles were found to greatly enhance the polarization response and energy density of terpolymers (from 9 J/cm3 to 10.5 J/cm3). Based on comprehensive thermal, dielectric and microstructure studies, the enhancement was believed to be related to the large amount of interfaces in the nanocomposites. In the interfaces, the chain mobility is increased and the energy barrier between the polar and nonpolar phases is reduced, resulting in higher polarization response and energy density at a reduced electric field. The P(VDF-TrFE-CFE) terpolymer/P(VDF-CTFE) copolymer and the P(VDFTrFE-CFE) terpolymer/PMMA blends were also studied. It was found that the P(VDFTrFE-CFE) terpolymers could not be completely miscible with the P(VDF-CTFE) copolymer. In the P(VDF-TrFE-CFE) terpolymer/P(VDF-CTFE) copolymer blends, with a small amount of the copolymer (5 and 10 wt%) in the terpolymer, enhancement of the polarization response similar to that observed in the terpolymer/ZrO 2 nanocomposites was observed. This enhancement was also thought to be mainly caused by the interface effect. The breakdown field of blends was also greatly improved, which resulted in a significant improvement in energy density (from 9 J/cm3 to 11.5 J/cm3). The P(VDF-TrFE-CFE) terpolymers are miscible with PMMA. Addition of PMMA was found to reduce the dielectric response of blends, but also to improve the breakdown field due to the improvement of mechanical properties. The optimum composition of the blends is around 2.5 wt% PMMA. With this composition, the breakdown field of the blends can be improved without reduction of energy density.
Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films

NASA Astrophysics Data System (ADS)

Hwang, Soo Min; Lee, Seung Muk; Park, Kyung; Lee, Myung Soo; Joo, Jinho; Lim, Jun Hyung; Kim, Hyoungsub; Yoon, Jae Jin; Kim, Young Dong

2011-01-01

High-permittivity (k) ZrO2/Si(100) films were fabricated by a sol-gel technique and the microstructural evolution with the annealing temperature (Ta) was correlated with the variation of their electrical performance. With increasing Ta, the ZrO2 films crystallized into a tetragonal (t) phase which was maintained until 700 °C at nanoscale thicknesses. Although the formation of the t-ZrO2 phase obviously enhanced the k value of the ZrO2 dielectric layer, the maximum capacitance in accumulation was decreased by the growth of a low-k interfacial layer (IL) between ZrO2 and Si with increasing Ta. On the other hand, the gate leakage current was remarkably depressed with increasing Ta probably due to the combined effects of the increased IL thickness, optical band gap of ZrO2, and density of ZrO2 and decreased remnant organic components.
Quantum confinement of zero-dimensional hybrid organic-inorganic polaritons at room temperature

NASA Astrophysics Data System (ADS)

Nguyen, H. S.; Han, Z.; Abdel-Baki, K.; Lafosse, X.; Amo, A.; Lauret, J.-S.; Deleporte, E.; Bouchoule, S.; Bloch, J.

2014-02-01

We report on the quantum confinement of zero-dimensional polaritons in perovskite-based microcavity at room temperature. Photoluminescence of discrete polaritonic states is observed for polaritons localized in symmetric sphere-like defects which are spontaneously nucleated on the top dielectric Bragg mirror. The linewidth of these confined states is found much sharper (almost one order of magnitude) than that of photonic modes in the perovskite planar microcavity. Our results show the possibility to study organic-inorganic cavity polaritons in confined microstructure and suggest a fabrication method to realize integrated polaritonic devices operating at room temperature.
Synthesis of n-type Bi4-xLaxTi3O12 (x=0 to 0.45) by alternative mechanochemical method

NASA Astrophysics Data System (ADS)

Sharanappa, Nagbasavanna

2017-05-01

Lanthanum doped bismuth titanate ceramic samples have been successfully synthesized by mechanochemical method showed good properties and have investigated the structure, microstructure, dielectric, Curie-Weiss behavior, thermoelectric properties, which resulted from substitution of La-ions in bismuth titanate. Plate-like shape with enhanced density is observed in the SEM micrographs. Ceramic samples exhibiting relaxor ferroelectric behavior by satisfying Curie-Weiss law. Thermoelectric studies reveal n-type semiconducting behavior of these samples. Synthesized compounds explored these desirable properties for innovative semiconductor based device applications.
Tunable Dielectric Materials and Devices for Broadband Wireless Communications

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Miranda, Felix A.; Dayton, James A. (Technical Monitor)

1998-01-01

Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies. The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and Ka-band (26.5-40 GHz) is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium Strontium Titanate ((Ba, Sr)TiO3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the potential of tunable dielectric technology for broadband wireless communication applications. In this chapter we summarize how film processing techniques, microwave test configurations, and prototype devices have combined to drive the field to its current stage of development.
Microstructure and dielectric properties of cellulose acetate-ZnO/ITO composite films based on water hyacinth

NASA Astrophysics Data System (ADS)

Diantoro, M.; Mustikasari, A. A.; Wijayanti, N.; Yogihati, C.; Taufiq, A.

2017-05-01

The electrical properties of Cellulose Acetate (CA), especially extracted from water hyacinth, is rarely informed. CA is generally more stable compared to its cellulose. It has a good potential for electronic application with specific modifications such as inducing metal oxide. A combination of intrinsic properties of Zinc Oxide (ZnO) and CA is expected as a great potential for electrical and optical applications. CA-ZnO/ITO composite film was investigated in relation with its structure, dielectric constant, and the effect of light intensity on their dielectric constant. CA-ZnO composite films were prepared with different mass of ZnO i.e. 0; 0,02; 0,04; 0,06 and 0,08 grams. CA-ZnO solution was synthesized via the mixing method with PEG:DMF solvents by using a magnetic hotplate stirrer with the rotation rate of 1500 rpm at 80°C. The CA-ZnO solution was then deposited onto ITO/glass substrate by using spin coating technique. The CA-ZnO/ITO films were annealed at 160°C to remove the remaining solvents. The effects of ZnO composition on the structure (crystallinity and morphology) and dielectric constant properties were investigated by using X-Ray Diffractometer, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, and LCR meter. It was shown that cellulose can be isolated from water hyacinth with the yield of 67,72 % by Chesson method and can further be transformed into CA. The X-ray diffraction pattern showed that there are 2 phases formed i.e. CA and ZnO. Furthermore, greater ZnO amount increased the crystallinity of composite films. The CA-ZnO films exhibit porous films with ZnO distributed on the CA surface films. Therefore, ZnO increases the dielectric constant of CA-ZnO composite films.
Layered-structural monoclinic–orthorhombic perovskite La{sub 2}Ti{sub 2}O{sub 7} to orthorhombic LaTiO{sub 3} phase transition and their microstructure characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herrera, G., E-mail: manuel.herrera@enp.unam.mx; Departamento de Química Inorgánica, Universidad de Valencia, 46100 Burjasot, Valencia; Instituto de Ciencias Nucleares, Universidad Nacional Autónoma de México, 04510 México D. F.

2014-03-01

The layered-structural ceramics, such as lanthanum titanate (La{sub 2}Ti{sub 2}O{sub 7}), have been known for their good temperature and low dielectric loss at microwave frequencies that make them good candidate materials for high frequency applications. However, few studies have been conducted on the synthesis optimization by sol gel reaction, in particular by acrylamide polymerization route. The interest in La{sub 2}Ti{sub 2}O{sub 7} ceramic has been greatly increased recently due to the effect of oriented grains. This anisotropy of the microstructure leads to anisotropy in dielectric, electrical and mechanical properties. In this study, grain oriented lanthanum titanate was produced by themore » sol–gel acrylamide polymerization route. The characterizations of the samples were achieved by thermal analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). X-ray diffraction indicates that the formation of monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} nanocrystals is a necessary first step to obtain orthorhombic LaTiO{sub 3} nanocomposites (with space group Pbnm). In this work we identified that the monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} with space group P2{sub 1} transforms its structure into one with the orthorhombic space group Cmc2{sub 1} at approximately 1073 K. The microstructure associated consisted of flaky monoclinic La{sub 2}Ti{sub 2}O{sub 7} nanocomposites in comparison with round-shaped LaTiO{sub 3} nanocomposites. - Highlights: • The flaky-like La{sub 2}Ti{sub 2}O{sub 7} compound was synthesized by sol–gel acrylamide route. • Simultaneous monitoring of the DTA and XRD with temperature was performed. • Phase transformation characterization of La{sub 2}Ti{sub 2}O{sub 7} has been carried out. • The variation of the La{sub 2}Ti{sub 2}O{sub 7} and LaTiO{sub 3} grain morphology has been compared.« less
Dielectric relaxation of gamma irradiated muscovite mica

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaur, Navjeet; Singh, Mohan, E-mail: mohansinghphysics@gmail.com; Singh, Lakhwant

2015-03-15

Highlights: • The present article reports the effect of gamma irradiation on the dielectric relaxation characteristics of muscovite mica. • Dielectric and electrical relaxations have been analyzed in the framework of dielectric permittivity, electric modulus and Cole–Cole formalisms. • The frequency dependent electrical conductivity has been rationalized using Johnsher’s universal power law. • The experimentally measured electric modulus and conductivity data have been fitted using Havriliak–Negami dielectric relaxation function. - Abstract: In the present research, the dielectric relaxation of gamma irradiated muscovite mica was studied in the frequency range of 0.1 Hz–10 MHz and temperature range of 653–853 K, usingmore » the dielectric permittivity, electric modulus and conductivity formalisms. The dielectric constants (ϵ′ and ϵ′′) are found to be high for gamma irradiated muscovite mica as compared to the pristine sample. The frequency dependence of the imaginary part of complex electric modulus (M′′) and dc conductivity data conforms Arrhenius law with single value of activation energy for pristine sample and two values of activation energy for gamma irradiated mica sample. The experimentally assessed electric modulus and conductivity information have been interpreted by the Havriliak–Negami dielectric relaxation explanation. Using the Cole–Cole framework, an analysis of real and imaginary characters of the electric modulus for pristine and gamma irradiated sample was executed which reflects the non-Debye relaxation mechanism.« less
Let's Measure the Dielectric Constant of a Piece of Paper!

ERIC Educational Resources Information Center

Karlow, Edwin A.

1991-01-01

Described is a simple circuit with which students can observe the effect of common dielectric materials in a capacitor and measure the dielectric constant of a piece of paper. Discussed are the theory, apparatus construction, and experimental procedures for this activity. (CW)
Study of dielectric relaxation and AC conductivity of InP:S single crystal

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

2012-07-01

The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.
3D Microstructure Effects in Ni-YSZ Anodes: Influence of TPB Lengths on the Electrochemical Performance.

PubMed

Pecho, Omar M; Mai, Andreas; Münch, Beat; Hocker, Thomas; Flatt, Robert J; Holzer, Lorenz

2015-10-21

3D microstructure-performance relationships in Ni-YSZ anodes for electrolyte-supported cells are investigated in terms of the correlation between the triple phase boundary (TPB) length and polarization resistance ( R pol ). Three different Ni-YSZ anodes of varying microstructure are subjected to eight reduction-oxidation (redox) cycles at 950 °C. In general the TPB lengths correlate with anode performance . However, the quantitative results also show that there is no simplistic relationship between TPB and R pol . The degradation mechanism strongly depends on the initial microstructure. Finer microstructures exhibit lower degradation rates of TPB and R pol . In fine microstructures, TPB loss is found to be due to Ni coarsening, while in coarse microstructures reduction of active TPB results mainly from loss of YSZ percolation. The latter is attributed to weak bottlenecks associated with lower sintering activity of the coarse YSZ. The coarse anode suffers from complete loss of YSZ connectivity and associated drop of TPB active by 93%. Surprisingly, this severe microstructure degradation did not lead to electrochemical failure. Mechanistic scenarios are discussed for different anode microstructures. These scenarios are based on a model for coupled charge transfer and transport, which allows using TPB and effective properties as input. The mechanistic scenarios describe the microstructure influence on current distributions, which explains the observed complex relationship between TPB lengths and anode performances. The observed loss of YSZ percolation in the coarse anode is not detrimental because the electrochemical activity is concentrated in a narrow active layer. The anode performance can be predicted reliably if the volume-averaged properties (TPB active , effective ionic conductivity) are corrected for the so-called short-range effect, which is particularly important in cases with a narrow active layer.
Effect of O 2 gas partial pressure on structures and dielectric characteristics of rf sputtered ZrO 2 thin films

NASA Astrophysics Data System (ADS)

Ma, C. Y.; Lapostolle, F.; Briois, P.; Zhang, Q. Y.

2007-08-01

Amorphous and polycrystalline zirconium oxide thin films have been deposited by reactive rf magnetron sputtering in a mixed argon/oxygen or pure oxygen atmosphere with no intentional heating of the substrate. The films were characterized by high-resolution transmission electron microscopy (HR-TEM), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and capacitance versus voltage ( C- V) measurements to investigate the variation of structure, surface morphology, thickness of SiO 2-like interfacial layer as well as dielectric characteristics with different oxygen partial pressures. The films deposited at low oxygen partial pressures (less than 15%) are amorphous and dense with a smooth surface. In contrast, the films prepared at an oxygen partial pressure higher than 73% are crystallized with the microstructure changing from the mixture of monoclinic and tetragonal phases to a single monoclinic structure. The film structural transition is believed to be consequences of decrease in the oxygen vacancy concentration in the film and of increase of the energetically neutral particles in the plasma due to an increased oxygen partial pressure. SE measurements showed that significant interfacial SiO 2 growth has taken place above approximately 51%. The best C- V results in terms of relative dielectric constant values are obtained for thin films prepared at an oxygen partial pressure of 15%.
An influence of a Glass Braze Composition on the Properties of Li-Ti Ferrite Joints

NASA Astrophysics Data System (ADS)

Lin, Panpan; Lin, Tiesong; He, Peng; Sekulic, Dusan P.; Zhao, Mengyuan; Wang, Shulei

2017-04-01

The influence of the chemical composition of Bi2O3-B2O3-SiO2-ZnO glass brazes on (i) the microstructure, (ii) the mechanical and (iii) the dielectric properties of Li-Ti ferrite joints was systematically investigated. The Bi5(Ti3Fe)O15 whisker and a white block phase consisting of Bi12SiO2 and Bi24B2O39 were observed in the joints of Li-Ti ferrite/Bi25-Ba and Li-Ti ferrite/glass brazes, respectively, containing a higher content of Bi2O3. No crystalline phase was detected in the Li-Ti ferrite/Bi25 and Li-Ti ferrite/Bi20 joints. The joint strength reached the maximum of 48 MPa in the Li-Ti ferrite/Bi25-Ba couples. It is assumed that this is mainly due to the strengthening effect of Bi5(Ti3Fe)O15 whiskers. The bonding temperature (700°C) had little effect on the dielectric properties of Li-Ti ferrite. Moreover, compared to the Bi25-Ba glass brazes, the Bi25 and Bi20 glass brazes had a less pronounced influence on the dielectric properties of joints. Different glass brazes can be tailored to different requirements depending on specific application and joint property requirements.

Dielectric and piezoelectric properties of lead-free Ba0.85Ca0.15Ti0.9-xZr0.1CuxO3 ceramics synthesized by a hydrothermal method

NASA Astrophysics Data System (ADS)

Hunpratub, Sitchai; Phokha, Sumalin; Maensiri, Santi; Chindaprasirt, Prinya

2016-04-01

Ba0.85Ca0.15Ti0.9Zr0.1-xCuxO3 (BCTZC) nanopowders were synthesized using a hydrothermal method after which they were pressed into discs and sintered in air at 1300 °C for 3 h to form ceramic samples. The phase and microstructure of the powder and ceramic samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results indicated that the ceramic samples exhibited a tetragonal structure and that CuO, BaZrO3 or CaTiO3 impurity phases, which had been present in the powder samples, were not observed. The average grain sizes in the ceramic samples were found to be 17.0, 16.1, 20.0, 18.1 and 19.6 μm for Cu mole fractions x of 0.002, 0.004, 0.006, 0.008 and 0.01, respectively. The dielectric constants, ferroelectric hysteresis loops and piezoelectric charge coefficients of the BCZTC ceramic samples were also investigated. Optimum values for the relative dielectric constant (ɛ‧), tan δ and piezoelectric charge coefficient (d33) of the samples were 3830, 0.03 and 306 pC/N, respectively, in the Cu mole fraction samples with x = 0.002.
Nanocomposite dielectrics in PbO-BaO-Na2O-Nb2O5-SiO2 system with high breakdown strength for high voltage capacitor applications.

PubMed

Zhang, Qingmeng; Luo, Jun; Tang, Qun; Han, Dongfang; Zhou, Yi; Du, Jun

2012-11-01

Nanocomposite dielectrics in 6PbO-4BaO-20Na2O-40Nb2O5-30SiO2 system were prepared via melt-quenching followed by controlled crystallization. X-ray diffraction studies reveal that Pb2Nb2O7, Ba,NaNb5O15, NaNbO3 and PbNb2O6 phases are formed from the as-quenched glass annealed in temperature range from 700 degrees C to 850 degrees C. Ba2NaNb5O15, Pb2Nb2O7 crystallizes at 700 degrees C and then Pb2Nb2O7 disappears at 850 degrees C, while PbNb2O6 and NaNbO3 are formed at 850 degrees C. Microstructural observation shows that the crystallized particles are nanometer-sized and randomly distributed with glass matrix being often found at grain boundaries. The dielectric constant of the nanocomposites formed at different crystallization temperatures shows good frequency and electric field stability. The breakdown strength is slightly decreased when the glass-ceramics thickness is varied from 1 mm to 4 mm. The corresponding energy density could reach 2.96 J/cm3 with a breakdown strength of 58 kV/mm for thickness of 1 mm.
Micro-structure, Mechanical Properties and Dielectric Properties of Bisphenol A Allyl Compound-Bismaleimide Modified by Super-Critical Silica and Polyethersulfone Composite

NASA Astrophysics Data System (ADS)

Chen, Yufei; Wang, Botao; Li, Fangliang; Teng, Chengjun

2017-07-01

Bisphenol A allyl compound-bismaleimide (MBAE) composite modified by SCE-SiO2 and polyethersulfone (PES) resin has been prepared and researched. SCE-SiO2 was modified by super-critical ethanol and PES thermoplastic resin used as modifiers. The composite was prepared via the hot melting method. The FT-IR measurements indicated that ethanol molecular had adsorbed on the nano-SiO2 surface. SEM images showed that the composite had a multiphase structure, PES and SCE-SiO2 existed as a dispersed phase, and the interaction of the three phases affected each other, such that the bending fracture behavior transformed from brittle fracture to ductile fracture, and the modifiers of SCE-SiO2 and PES resin could improve the mechanical properties. The impact and the bending strength of the composite was 16.5 kJ/mm2 and 150.4 MPa, improved by 68.3% and 56.7% compared with those of the MBAE matrix, respectively, when the content of SCE-SiO2 was 2 wt.% and PES 5 wt.%. The dielectric constant ( ɛ) of the composites was less than 3.9 and decreased with increasing frequency, and the dielectric loss was less than 9 × 10-3 for frequencies between 102 Hz and 105 Hz. These properties could meet the requirement of insulating material.
Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba0.95Ca0.05)(Ti0.93Sn0.07)O₃ Lead-Free Piezoceramic Sheets.

PubMed

Cheng, Chien-Min; Chen, Kai-Huang; Lee, Da-Huei; Jong, Fuh-Cheng; Chen, Mei-Li; Chang, Jhih-Kai

2018-01-24

By the conventional solid state reaction method, a small amount of lithium fluoride (LiF) was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (Ba 0.95 Ca 0.05 )(Ti 0.93 Sn 0.07 )O₃ (BCTS) lead-free piezoceramic sheets. Using X-ray diffraction (XRD) and a scanning electron microscope (SEM), the inferences of the crystalline and surface microstructures were obtained and analyzed. Then, the impedance analyzer and d 33 -meter were used to measure the dielectric and piezoelectric characteristics. In this study, the optimum sintering temperature of the BCTS sheets decreased from 1450 °C to 1390 °C due to LiF doping. For the 0.07 wt % LiF-doped BCTS sheets sintered at 1390 °C, the piezoelectric constant (d 33 ) is 413 pC/N, the electric-mechanical coupling coefficient (k p ) is 47.5%, the dielectric loss (tan δ) is 3.9%, and the dielectric constant (ε r ) is 8100, which are all close to or even better than that of the pure undoped BCTS ceramics. The Curie temperature also improved, from 85 °C for pure BCTS to 140 °C for BCTS-0.07 LiF sheets. Furthermore, by using the vibration system and fixing 1.5 g tip mass at the end of the sheets, as the vibration frequency is 20 Hz, the proposed piezoelectric ceramic sheets also reveal a good energy harvesting performance at the maximum output peak voltage of 4.6 V, which is large enough and can be applied in modern low-power electronic products.
Capacitive microelectromechanical switches with dynamic soft-landing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep R.

2015-10-13

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switchedmore » between the inactivated state and the activated state.« less
Capacitive microelectromechanical switches with dynamic soft-landing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep

2017-01-03

A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switchedmore » between the inactivated state and the activated state.« less
Preparation of TiO2/Ag/TiO2 (TAT) multilayer films with optical and electrical properties enhanced by using Cr-added Ag film

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Lee, Kee-Sun

2017-09-01

The dielectric-metal-dielectric tri-layer films have attracted much attention by virtue of their low-cost and high quality device performance as a transparent conductive electrode. Here, we report the deposition of Cr doped Ag films sandwiched between thin TiO2 layers and investigation on the surface microstructure, optical and electrical properties depending on the thickness of the Ag(Cr). The activation energy (1.18 eV) for grain growth of Ag was calculated from the Arrhenius plot using the law Dn -D0n = kt , which was comparable to the bulk diffusion of Ag. This result indicated the grain growth of Ag was effectively retarded by the Cr addition, which was presumed to related with blocking the surface and grain boundary diffusion due to Cr segregation. Based on thermal stability of Cr added Ag film, we deposited TiO2/Ag(Cr)/TiO2 (TAT) multilayer thin films and with a 10 nm thick Ag(Cr), the TAT films showed high optical transmittance in the visible region (94.2%), low electrical resistivity (8.66 × 10-5 Ω cm), and hence the high figure of merit 57.15 × 10-3 Ω-1 was achieved. The high transmittance of the TAT film was believed to be attributed to the low optical loss due to a reduction in the Ag layer thickness, the surface plasmon effect, and the electron scattering reduced by the Ag layer with a low electrical resistivity.
Effect of off-center ion substitution in morphotropic lead zirconate titanate composition

NASA Astrophysics Data System (ADS)

Bhattarai, Mohan K.; Pavunny, Shojan P.; Instan, Alvaro A.; Scott, James F.; Katiyar, Ram S.

2017-05-01

A detailed study of the effect of off-center donor ion (Sc3+) substitution on structural, microstructural, optical, dielectric, electrical, and ferroelectric properties of morphotropic composition of lead zirconate titanate electroceramics with the stoichiometric formula Pb0.85Sc0.10Zr0.53Ti0.47O3 (PSZT) and synthesized using a high energy solid-state reaction technique was carried out. Powder x-ray diffractometry was used to identify the stabilized tetragonal phase (space group P 4 m m ) with considerably reduced tetragonal strain, c /a = 1.005. An analysis of the thermal dependence of the Raman results indicated a smooth displacive (ferroelectric-paraelectric) phase transition as revealed by the observed disappearance of the soft modes A1 (1TO) and A1 (2TO) above 460 K. The dielectric response of Pt/PSZT/Pt metal-ferroelectric-metal capacitors was probed over a wide range of thermal excursions (85-600 K) and ac signal frequencies (102-106 Hz). Thermally activated dynamic and static conduction processes indicate hopping conduction mechanism ( Ea c t ≤ 0.015 eV) and the formation of small polarons caused by the electron and/or hole-lattice (phonon) interaction ( Ea c t ≥ 0.1 eV) at low (100-300 K) and high temperatures (300-600 K), respectively. The reduction in remnant polarization obtained is in good agreement with the largely reduced tetragonal strain observed in this sample, ( Pr ∝ √{c /a -1 } ). DC conduction is dominated by Poole-Frenkel mechanism that assumes a Coulombic attraction between detrapped electrons and positively charged stationary defect species in the polycrystalline matrix.
Optimum Conditions for Preparation of High-Performance (Ba0.97Ca0.03)(Ti0.94Sn0.06)O3 Ceramics by Solid-State Combustion

NASA Astrophysics Data System (ADS)

Chootin, Suphornphun; Bongkarn, Theerachai

2017-08-01

The effects of calcination conditions (950°C to 1200°C for 2 h to 6 h) and sintering temperature (1300°C to 1500°C for 2 h) on phase formation, microstructure, and electrical behavior of lead-free piezoelectric (Ba0.97Ca0.03)(Ti0.94Sn0.06)O3 (BCTS) ceramics produced by solid-state combustion using glycine as fuel have been investigated. BCTS powder with pure perovskite structure was obtained by calcination at 1100°C for 4 h. The microstructure of the BCTS powders showed almost spherical shape with average particle size increasing from 184 nm to 320 nm as the calcination temperature and soaking time were increased. The XRD patterns of all ceramics exhibited single perovskite structure. Rietveld refinement analysis indicated that the BCTS ceramics exhibited coexistence of orthorhombic and tetragonal phase in all samples with increased tetragonal phase content with increasing sintering temperature. The average grain size, density, dielectric constants at room ( ɛ r) and Curie temperature ( ɛ C), remanent polarization ( P r), and piezoelectric constant ( d 33) increased as the sintering temperature was increased up to 1400°C, then decreased. BCTS ceramic sintered at 1400°C exhibited the highest relative density (98%), highest dielectric response ( ɛ r = 4951, ɛ C = 19,185), good ferroelectric behavior ( P r = 12.74 μC/cm2 and coercive field E c = 1.60 kV/cm), and highest d 33 value (528 pC/N). The large piezoelectricity of BCTS ceramics makes them good candidates for use in lead-free applications to replace Pb-based ceramics.
Structural phase transition and multiferroic properties of Bi0.8A0.2Fe0.8Mn0.2O3 (A = Ca, Sr)

NASA Astrophysics Data System (ADS)

Rout, Jyoshna; Choudhary, R. N. P.

2018-05-01

The multiferroic BiFeO3 and Bi0.8A0.2Fe0.8Mn0.2O3 (A = Ca, Sr) have been synthesized using direct mechanosynthesis. Detailed investigations were made on the influence of Ca-Mn and Sr-Mn co-substitutions on the structure change, electric and magnetic properties of the BFO. Rietveld refinement on the XRD pattern of the modified samples clarifies the structural transition from R3c:H (parent BiFeO3) to the biphasic structure (R3c: H + Pnma). Scanning electron micrographs confirmed the polycrystalline nature of the materials and each of the microstructure comprised of uniformly distributed grains with less porosity. The dielectric measurements reveal that enhancement in dielectric properties due to the reduction of oxygen vacancies by substitutional ions. Studies of frequency-dependence of impedance and related parameters exhibit that the electrical properties of the materials are strongly dependent on temperature, and bear a good correlation with its microstructure. The bulk resistance (evaluated from impedance studies) is found to decrease with increasing temperature for all the samples. The alternating current (ac) conductivity spectra show a typical signature of an ionic conducting system, and are found to obey Jonscher's universal power law. Preliminary studies of magnetic characteristics of the samples reveal enhanced magnetization for Ca-Mn co-substituted sample. The magnetoelectric coefficient as the function of applied dc magnetizing field under fixed ac magnetic field 15.368 Oe is measured and this ME coefficient αME corresponds to induction of polarization by a magnetic field.
Microwave application on air drying of apple (var. Granny Smith). The influence of vacuum impregnation pretreatment

NASA Astrophysics Data System (ADS)

Martin Esparza, Maria Eugenia

Combined hot air-microwave drying has been studied on apple (var. Granny Smith), with and without vacuum impregnation (VI) pretreatment with isotonic solution, respect to kinetics, microstructural and final quality items. In order to reach this objective, a drier has been designed and built, that allows to control and to register all the variables which take place during the drying process. Thermal and dielectric properties, that are very important characteristics when studying heat and mass transfer phenomena that occur during the combined drying process, have been related to temperature and/or moisture content throughout empirical equations. It could be observed that all these properties decreased with product moisture content. Respect to dielectric properties, a relationship among water binding forms to food structure and water molecules relaxation frequency has been found. On the other hand, the effect of drying treatment conditions (air rate, drying temperature, sample thickness and incident microwave power) on the drying rate, from an empirical model based on diffusional mechanisms with two kinetic parameters (k1 and k2), both function of the incident microwave power, has been studied. Microwave application to air drying implied a notable decrease on drying time, the higher the applied power the higher the reduction. Microstructural study by Cryo-Sem revealed fast water vaporization taking place when microwaves are applied. Vacuum impregnation did not implied an additional advantage for combined drying as drying rate was similar to that of NIV samples. Finally, it has been studied the influence of process conditions on the color and mechanical properties of the dried product (IV and NIV). Vacuum impregnation implied an increase on the fracture resistance and less purity and tone angle. Microwave application induced product browning with respect to air drying (tone decreased and purity increased).
Structural, ac conductivity and dielectric properties of 3-formyl chromone

NASA Astrophysics Data System (ADS)

Ali, H. A. M.

2017-07-01

The structure for the powder of 3-formyl chromone was examined by X-ray diffraction technique in the 2θ° range ( 4° - 60° . The configuration of Al/3-formyl chromone/Al samples was designed. The electrical and dielectric properties were studied as a function of frequency (42- 5 × 106 Hz) and temperature (298-408K). The ac conductivity data of bulk of 3-formyl chromone varies as a power law with the frequency at different temperatures. The predominant mechanism for ac conduction was deduced. The ac conductivity shows a thermally activated process at different frequencies. The dielectric constant and dielectric loss were determined using the capacitance and dissipation factor measurements at different temperatures. The dielectric loss shows a peak of relaxation time that shifted to higher frequency with an increase in the temperature. The activation energy of the relaxation process was estimated.
Dielectric and impedance spectral characteristics of bulk ZnIn2Se4

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2014-02-01

The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn2Se4 in a pellet form were investigated in the frequency range of 102-106 Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(EF) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.
Fabrication of PVDF-TrFE based bilayered PbTiO3/PVDF-TrFE films capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Annuar, I.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2016-07-01

Development of high performance capacitor is reaching towards new generation where the ferroelectric materials take places as the active dielectric layer. The motivation of this study is to produce high capacitance device with long life cycle. This was configured by preparing bilayered films where lead titanate as an active dielectric layer and stacked with the top dielectric layer, poly(vinyledenefluoride-trifluoroethylene). Both of them are being referred that have one in common which is ferroelectric behavior. Therefore the combination of ceramic and polymer ferroelectric material could perform optimum dielectric characteristic for capacitor applications. The fabrication was done by simple sol-gel spin coating method that being varied at spinning speed property for polymer layers, whereas maintaining the ceramic layer. The characterization of PVDF-TrFE/PbTiO3 was performed according to metal-insulator-metal stacked capacitor measurement which includes structural, dielectric, and ferroelectric measurement.
FAST TRACK COMMUNICATION High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Xia, D. X.; Xu, J. B.

2010-11-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm2 V-1 s-1 and 2.1 cm2 V-1 s-1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics.
Compton effect thermally activated depolarization dosimeter

DOEpatents

Moran, Paul R.

1978-01-01

A dosimetry technique for high-energy gamma radiation or X-radiation employs the Compton effect in conjunction with radiation-induced thermally activated depolarization phenomena. A dielectric material is disposed between two electrodes which are electrically short circuited to produce a dosimeter which is then exposed to the gamma or X radiation. The gamma or X-radiation impinging on the dosimeter interacts with the dielectric material directly or with the metal composing the electrode to produce Compton electrons which are emitted preferentially in the direction in which the radiation was traveling. A portion of these electrons becomes trapped in the dielectric material, consequently inducing a stable electrical polarization in the dielectric material. Subsequent heating of the exposed dosimeter to the point of onset of ionic conductivity with the electrodes still shorted through an ammeter causes the dielectric material to depolarize, and the depolarization signal so emitted can be measured and is proportional to the dose of radiation received by the dosimeter.
Application of the compensated Arrhenius formalism to self-diffusion: implications for ionic conductivity and dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2010-07-08

Self-diffusion coefficients are measured from -5 to 80 degrees C in a series of linear alcohols using pulsed field gradient NMR. The temperature dependence of these data is studied using a compensated Arrhenius formalism that assumes an Arrhenius-like expression for the diffusion coefficient; however, this expression includes a dielectric constant dependence in the exponential prefactor. Scaling temperature-dependent diffusion coefficients to isothermal diffusion coefficients so that the exponential prefactors cancel results in calculated energies of activation E(a). The exponential prefactor is determined by dividing the temperature-dependent diffusion coefficients by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the dielectric constant places the data on a single master curve. This procedure is identical to that previously used to study the temperature dependence of ionic conductivities and dielectric relaxation rate constants. The energies of activation determined from self-diffusion coefficients in the series of alcohols are strikingly similar to those calculated for the same series of alcohols from both dielectric relaxation rate constants and ionic conductivities of dilute electrolytes. The experimental results are described in terms of an activated transport mechanism that is mediated by relaxation of the solution molecules. This microscopic picture of transport is postulated to be common to diffusion, dielectric relaxation, and ionic transport.
Dielectric screening of early differentiation patterns in mesenchymal stem cells induced by steroid hormones.

PubMed

Ron, Amit; Shur, Irena; Daniel, Ramiz; Singh, Ragini Raj; Fishelson, Nick; Croitoru, Nathan; Benayahu, Dafna; Shacham-Diamand, Yosi

2010-06-01

In the framework of this study, target identification and localization of differentiation patterns by means of dielectric spectroscopy is presented. Here, a primary pre-osteoblastic bone marrow-derived MBA-15 cellular system was used to study the variations in the dielectric properties of mesenchymal stem cells while exposed to differentiation regulators. Using the fundamentals of mixed dielectric theories combined with finite numerical tools, the permittivity spectra of MBA-15 cell suspensions have been uniquely analyzed after being activated by steroid hormones to express osteogenic phenotypes. Following the spectral analysis, significant variations were revealed in the dielectric properties of the activated cells in comparison to the untreated populations. Based on the differentiation patterns of MBA-15, the electrical modifications were found to be highly correlated with the activation of specific cellular mechanisms which directly react to the hormonal inductions. In addition, by describing the dielectric dispersion in terms of transfer functions, it is shown that the spectral perturbations are well adapted to variations in the electrical characteristics of the cells. The reported findings vastly emphasize the tight correlation between the cellular and electrical state of the differentiated cells. It therefore emphasizes the vast abilities of impedance-based techniques as potential screening tools for stem cell analysis. Copyright 2009 Elsevier B.V. All rights reserved.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less
Diurnal changes in the dielectric properties and water status of eastern hemlock and red spruce from Howland, ME

NASA Technical Reports Server (NTRS)

Salas, W. A.; Ranson, K. J.; Rock, B. N.; Moss, D. M.

1991-01-01

The diurnal characteristics of microwave dielectric properties and water potential of two conifer species were investigated in July and September, 1990. P-band and C-band radial dielectric profiles of hemlock and red spruce, as well as hemlock diurnal water potential and dielectric profiles, are presented. The resulting radial dielectric profiles matched the regions of the functional sapwood (water transport component of the active xylem) in both species such that the sapwood was characterized by a higher dielectric than the bark and heartwood tissues. This is probably due to characteristic differences in the water content of each tissue. As the hemlocks progressed through their diurnal water potential pattern, the dielectric profile remained static until mid-afternoon. As the tension in the water column relaxed (2 to 3 bars) the dielectric constant decreased by 30 to 40 percent. There are several possible explanations for this phenomenon, and these may relate to the dependency of the dielectric measurements on temperature, salinity, and volumetric water content.

Dielectric relaxation in AgI doped silver selenomolybdate glasses

NASA Astrophysics Data System (ADS)

Palui, A.; Shaw, A.; Ghosh, A.

2016-05-01

We report the study of dielectric properties of some silver ion conducting silver selenomolybdate mixed network former glasses in a wide frequency and temperature range. The experimental data have been analyzed in the framework of complex dielectric permittivity. The dielectric permittivity data have been well interpreted using the Cole-Cole function. The temperature dependence of relaxation time obtained from real part of dielectric permittivity data shows an Arrhenius behavior. The activation energy shows a decreasing trend with the increase of doping content. Values of stretched exponential parameter are observed to be independent of temperature and composition.
Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

PubMed

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-19

Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.
Study of 0.1Ni0.8Zn0.2Fe2O4-0.9Pb1-3x/2LaxZr0.65Ti0.35O3 magnetoelectric composites

NASA Astrophysics Data System (ADS)

Rani, Rekha; Juneja, J. K.; Singh, Sangeeta; Raina, K. K.; Prakash, Chandra

2013-01-01

Magnetoelectric composites of nickel zinc ferrite (NZF) and La substituted lead zirconate titanate (PLZT) having representative formula 0.1Ni0.8Zn0.2Fe2O4-0.9Pb1-3x/2LaxZr0.65Ti0.35O3 (x=0, 0.01, 0.02 and 0.03) were synthesized by a conventional solid state route. X-ray diffraction analysis was carried out to confirm the coexistence of individual phases. Scanning electron microscope micrographs were taken for microstructural study of the samples. Dielectric properties were studied as a function of temperature and frequency. To study ferroelectric and magnetic ordering in composite samples, P-E and M-H hysteresis loops were recorded respectively. M-H hysteresis loops were taken for electrically poled and unpoled samples to confirm magnetoelectric coupling between the two phases (NZF and PLZT). La substitution results in significant improvement in dielectric, ferroelectric and piezoelectric properties of composite samples.
Dual frequency diffuse dielectric barrier discharge in atmospheric-pressure air-like gas mixture for thin film deposition

NASA Astrophysics Data System (ADS)

Liu, Yaoge; Starostin, Serguei; Welzel, Stefan; van de Sanden, M. C. M.; de Vries, Hindrik; Fom Institute-Differ Team; Eindhoven University Of Technology Team; Fujifilm Manufacturing Europe B. v. Team

2016-09-01

A dual frequency (DF) diffuse discharge was obtained in an atmospheric-pressure dielectric barrier discharge reactor in air-like gas mixtures. By adding a radio frequency (RF) voltage to a low frequency (LF) voltage, we aim to increase the plasma power density. In this study, the discussion is mainly focused on the discharge characteristics and the thin film deposition. According to the spatio-temporal emission, the discharge shows a glow-like structure with both LF and DF voltages. By fitting the spectral lines of the second positive system of N2, the gas temperature was estimated which does not obviously increase with the extra RF signal. Moreover, SiO2-like film was deposited from TEOS using the DF power supply. Thin film properties such as surface morphology, microstructure and stoichiometry were analyzed by AFM, FTIR and XPS, respectively. Because of the higher plasma power density, the DF power supply can be an efficient approach to improve the properties and to increase the throughput of the thin film deposition.
Effect of La substitution on structural and electrical properties of BiFeO3 thin film

NASA Astrophysics Data System (ADS)

Das, S. R.; Bhattacharya, P.; Choudhary, R. N. P.; Katiyar, R. S.

2006-03-01

The effect of La substitution on the structural and electrical properties of multiferroic BiFeO3 thin films grown on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition has been reported. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all of the secondary phases. The dielectric constant of the films was systematically increased from 165 to ~350 and the films showed excellent dielectric loss behavior. We observed a gradual increase in the remnant polarization (2Pr) with lanthanum substitution obtaining a maximum value of ~42 μC/cm2 at 20 mol % La incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current decreased from 10-4 to 10-7 A/cm2 for La-substituted films at a field strength of 50 kV/cm. The reduction of dc leakage current of La-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.
Dielectric behavior and AC conductivity of Cr doped α-Mn2O3

NASA Astrophysics Data System (ADS)

Chandra, Mohit; Yadav, Satish; Singh, K.

2018-05-01

The complex dielectric behavior of polycrystalline α-Mn2-xCrxO3 (x = 0.10) has been investigated isothermally at wide frequency range (4Hz-1 MHz) at different temperatures (300-390K). The dielectric spectroscopy results have been discussed in different formulism like dielectric constant, impedance and ac conductivity. The frequency dependent dielectric loss (tanδ) exhibit a clear relaxation behavior in the studied temperature range. The relaxation frequency increases with increasing temperature. These results are fitted using Arrhenius equation which suggest thermally activated process and the activation energy is 0.173±0.0024 eV. The normalized tanδ curves at different temperatures merge as a single master curve which indicate that the relaxation process follow the similar relaxation dynamics in the studied temperature range. Further, the dielectric relaxation follows non-Debye behavior. The impedance results inference that the grain boundary contribution dominate at lower frequency whereas grain contribution appeared at higher frequencies and exhibit strong temperature dependence. The ac conductivity data shows that the ac conductivity increases with increasing temperature which corroborate the semiconducting nature of the studied sample.
Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

NASA Astrophysics Data System (ADS)

Sengodan, R.; Shekar, B. Chandar; Sathish, S.

Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.
Three-year changes in leisure activities are associated with concurrent changes in white matter microstructure and perceptual speed in individuals aged 80 years and older.

PubMed

Köhncke, Ylva; Laukka, Erika J; Brehmer, Yvonne; Kalpouzos, Grégoria; Li, Tie-Qiang; Fratiglioni, Laura; Bäckman, Lars; Lövdén, Martin

2016-05-01

Accumulating evidence suggests that engagement in leisure activities is associated with favorable trajectories of cognitive aging, but little is known about brain changes related to both activities and cognition. White matter microstructure shows experience-dependent plasticity and declines in aging. Therefore, we investigated the role of change in white matter microstructure in the activities-cognition link. We used repeated assessments of engagement, perceptual speed, and white matter microstructure (probed with diffusion tensor imaging) in a population-based sample of individuals over 80 years without dementia (n = 442, Mage = 85.1; n = 70 for diffusion tensor imaging; 2 occasions 3 years apart). Using multivariate latent change modeling, we observed positive correlations among changes in predominantly social activities, white matter microstructure, and perceptual speed. Interindividual differences in change in white matter microstructure statistically accounted for the association between change in leisure activities and change in perceptual speed. However, as analyses are based on observational data from 2 measurement occasions, causality remains unclear. Copyright © 2016 Elsevier Inc. All rights reserved.
Interference phenomena in the refraction of a surface polariton by vertical dielectric barriers

NASA Technical Reports Server (NTRS)

Shen, T. P.; Wallis, R. F.; Maradudin, A. A.; Stegeman, G. I.

1984-01-01

A normal mode analysis is used to calculate the transmission and reflection coefficients for a surface polariton propagating along the interface between a surface active medium and a dielectric and incident normally on a vertical dielectric barrier of finite thickness or a thin dielectric film of finite length. The efficiencies of conversion of the surface polariton into transmitted and reflected bulk waves are also determined. The radiation patterns associated with the latter waves are presented.
Design of Particulate-Reinforced Composite Materials

PubMed Central

Muc, Aleksander; Barski, Marek

2018-01-01

A microstructure-based model is developed to study the effective anisotropic properties (magnetic, dielectric or thermal) of two-phase particle-filled composites. The Green’s function technique and the effective field method are used to theoretically derive the homogenized (averaged) properties for a representative volume element containing isolated inclusion and infinite, chain-structured particles. Those results are compared with the finite element approximations conducted for the assumed representative volume element. In addition, the Maxwell–Garnett model is retrieved as a special case when particle interactions are not considered. We also give some information on the optimal design of the effective anisotropic properties taking into account the shape of magnetic particles. PMID:29401678
Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

NASA Astrophysics Data System (ADS)

Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

2014-01-01

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.
Electric tunable behavior of sputtered lead barium zirconate thin films

NASA Astrophysics Data System (ADS)

Wu, Lin-Jung; Wu, Jenn-Ming; Huang, Hsin-Erh; Bor, Hui-Yun

2007-02-01

Lead barium zirconate (PBZ) films were grown on Pt /Ti/SiO2/Si substrates by rf-magnetron sputtering. The sputtered PBZ films possess pure perovskite phase, uniform microstructure, and excellent tunable behaviors. The tunability and loss tangent of sputtered PBZ films depend greatly on the oxygen mixing ratio (OMR). The optimal dielectric tunable behavior occurs in the PBZ films sputtered at 10% OMR. The sputtered PBZ film (10% OMR) possesses a value of figure of merit of 60, promising for frequency-agile applications. Bulk acoustic waves induced by electromechanical coupling occur at 2.72GHz, which is useful in fabricating filters and related devices in the microwave range.
3D Microstructure Effects in Ni-YSZ Anodes: Influence of TPB Lengths on the Electrochemical Performance

PubMed Central

Pecho, Omar M.; Mai, Andreas; Münch, Beat; Hocker, Thomas; Flatt, Robert J.; Holzer, Lorenz

2015-01-01

3D microstructure-performance relationships in Ni-YSZ anodes for electrolyte-supported cells are investigated in terms of the correlation between the triple phase boundary (TPB) length and polarization resistance (Rpol). Three different Ni-YSZ anodes of varying microstructure are subjected to eight reduction-oxidation (redox) cycles at 950 °C. In general the TPB lengths correlate with anode performance. However, the quantitative results also show that there is no simplistic relationship between TPB and Rpol. The degradation mechanism strongly depends on the initial microstructure. Finer microstructures exhibit lower degradation rates of TPB and Rpol. In fine microstructures, TPB loss is found to be due to Ni coarsening, while in coarse microstructures reduction of active TPB results mainly from loss of YSZ percolation. The latter is attributed to weak bottlenecks associated with lower sintering activity of the coarse YSZ. The coarse anode suffers from complete loss of YSZ connectivity and associated drop of TPBactive by 93%. Surprisingly, this severe microstructure degradation did not lead to electrochemical failure. Mechanistic scenarios are discussed for different anode microstructures. These scenarios are based on a model for coupled charge transfer and transport, which allows using TPB and effective properties as input. The mechanistic scenarios describe the microstructure influence on current distributions, which explains the observed complex relationship between TPB lengths and anode performances. The observed loss of YSZ percolation in the coarse anode is not detrimental because the electrochemical activity is concentrated in a narrow active layer. The anode performance can be predicted reliably if the volume-averaged properties (TPBactive, effective ionic conductivity) are corrected for the so-called short-range effect, which is particularly important in cases with a narrow active layer. PMID:28793624
DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yongli; Wang, Xianjie; Sui, Yu

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, andmore » that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.« less
Origin of colossal dielectric permittivity of rutile Ti 0.9In 0.05Nb 0.05O 2: single crystal and polycrystalline

DOE PAGES

Song, Yongli; Wang, Xianjie; Sui, Yu; ...

2016-02-12

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, andmore » that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.« less
Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

PubMed Central

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-01-01

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles. PMID:26869187
Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-02-01

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.
Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

PubMed

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-02-12

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10(4), dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.
Effect of Mn doping on the temperature-dependent anomalous giant dielectric behavior of CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Kim, C. H.; Jang, Y. H.; Seo, S. J.; Song, C. H.; Son, J. Y.; Yang, Y. S.; Cho, J. H.

2012-06-01

We report dielectric properties and dielectric relaxation behaviors of Mn-substituted CaCu3Ti4O12 (CCTO) on Cu sites. While CCTO exhibits the giant dielectric constant and low dielectric loss in a wide temperature range, drastic suppression of the dielectric constant in Mn-doped CCTO (CCMTO) samples have been observed in temperature and frequency dependencies of dielectric properties with two possible origins as Mn doping increases. The observed suppression of dielectric response in the low Mn doping differs from the heavy doping of Mn in CCMTO samples. The low-Mn-doped CCMTO samples (x=0.01 and 0.02) show that the relaxation time and the activation energy Ea were slightly reduced due to a decreased contribution from the density of the dipolar effect. However, in heavily doped CCMTO samples (x=0.03, 0.04, and 0.05), the dielectric response, relaxation time, and Ea were significantly decreased, suggesting Mn doping plays a significant role in the destruction of the intrinsic dipolar effect.
Microplasmas for chemical analysis: analytical tools or research toys?

NASA Astrophysics Data System (ADS)

Karanassios, Vassili

2004-07-01

An overview of the activities of the research groups that have been involved in fabrication, development and characterization of microplasmas for chemical analysis over the last few years is presented. Microplasmas covered include: miniature inductively coupled plasmas (ICPs); capacitively coupled plasmas (CCPs); microwave-induced plasmas (MIPs); a dielectric barrier discharge (DBD); microhollow cathode discharge (MCHD) or microstructure electrode (MSE) discharges, other microglow discharges (such as those formed between "liquid" electrodes); microplasmas formed in micrometer-diameter capillary tubes for gas chromatography (GC) or high-performance liquid chromatography (HPLC) applications, and a stabilized capacitive plasma (SCP) for GC applications. Sample introduction into microplasmas, in particular, into a microplasma device (MPD), battery operation of a MPD and of a mini- in-torch vaporization (ITV) microsample introduction system for MPDs, and questions of microplasma portability for use on site (e.g., in the field) are also briefly addressed using examples of current research. To emphasize the significance of sample introduction into microplasmas, some previously unpublished results from the author's laboratory have also been included. And an overall assessment of the state-of-the-art of analytical microplasma research is provided.

Fabrication of PVDF-TrFE based bilayered PbTiO{sub 3}/PVDF-TrFE films capacitor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurbaya, Z., E-mail: nurbayazainal@gmail.com; Razak School of Engineering and Advanced Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur; Wahid, M. H.

2016-07-06

Development of high performance capacitor is reaching towards new generation where the ferroelectric materials take places as the active dielectric layer. The motivation of this study is to produce high capacitance device with long life cycle. This was configured by preparing bilayered films where lead titanate as an active dielectric layer and stacked with the top dielectric layer, poly(vinyledenefluoride-trifluoroethylene). Both of them are being referred that have one in common which is ferroelectric behavior. Therefore the combination of ceramic and polymer ferroelectric material could perform optimum dielectric characteristic for capacitor applications. The fabrication was done by simple sol-gel spin coatingmore » method that being varied at spinning speed property for polymer layers, whereas maintaining the ceramic layer. The characterization of PVDF-TrFE/PbTiO3 was performed according to metal-insulator-metal stacked capacitor measurement which includes structural, dielectric, and ferroelectric measurement.« less
Carbon-coated CoFe–CoFe2O4 composite particles with high and dual-band electromagnetic wave absorbing properties

NASA Astrophysics Data System (ADS)

Guan, Zhen-Jie; Jiang, Jian-Tang; Chen, Na; Gong, Yuan-Xun; Zhen, Liang

2018-07-01

SiO2 and TiO2, as conventional dielectric shells of ferromagnetic/dielectric composite particles, can protect ferromagnetic particles from aggregation and oxidation, but contribute little to electromagnetic loss. In this work, we designed nano-assembled CoFe–CoFe2O4@C composite particles, in which ferrites with high permeability were dielectric elements and carbon was introduced as protective layers, aiming for high-efficiency microwave absorption. These assembled particles with different CoFe contents were prepared through solvothermal methods and subsequent hydrogen-thermal reduction. CoFe nanoparticles were dispersed on a CoFe2O4 matrix via an in situ reduction transformation from CoFe2O4 to CoFe. The microstructure evolution of composite particles and corresponding electromagnetic properties tailoring were investigated. The content and size of CoFe as well as the porosity of composite particles increase gradually as the annealing temperature increases. A maximum reflection loss (RL max) of –71.73 dB is observed at 4.78 GHz in 3.4 mm thick coating using particles annealed at 500 °C as fillers. The coating presents double-band absorbing characteristics, as broad effective absorption bandwidth with RL > 5 (ERL 5) and high RL max are observed in both S-C and X-Ku bands. The tunability as well as the assembled characteristic of the electromagnetic property that endued from the composite structure contributes to the excellent electromagnetic wave absorbing performances.
Carbon-coated CoFe-CoFe2O4 composite particles with high and dual-band electromagnetic wave absorbing properties.

PubMed

Guan, Zhen-Jie; Jiang, Jian-Tang; Chen, Na; Gong, Yuan-Xun; Zhen, Liang

2018-07-27

SiO 2 and TiO 2 , as conventional dielectric shells of ferromagnetic/dielectric composite particles, can protect ferromagnetic particles from aggregation and oxidation, but contribute little to electromagnetic loss. In this work, we designed nano-assembled CoFe-CoFe 2 O 4 @C composite particles, in which ferrites with high permeability were dielectric elements and carbon was introduced as protective layers, aiming for high-efficiency microwave absorption. These assembled particles with different CoFe contents were prepared through solvothermal methods and subsequent hydrogen-thermal reduction. CoFe nanoparticles were dispersed on a CoFe 2 O 4 matrix via an in situ reduction transformation from CoFe 2 O 4 to CoFe. The microstructure evolution of composite particles and corresponding electromagnetic properties tailoring were investigated. The content and size of CoFe as well as the porosity of composite particles increase gradually as the annealing temperature increases. A maximum reflection loss (RL max ) of -71.73 dB is observed at 4.78 GHz in 3.4 mm thick coating using particles annealed at 500 °C as fillers. The coating presents double-band absorbing characteristics, as broad effective absorption bandwidth with RL > 5 (ERL 5 ) and high RL max are observed in both S-C and X-K u bands. The tunability as well as the assembled characteristic of the electromagnetic property that endued from the composite structure contributes to the excellent electromagnetic wave absorbing performances.
Effects of Dopant on the Dielectric Properties of CaZrO3 Ceramic Sintered in a Reducing Atmosphere

NASA Astrophysics Data System (ADS)

Lee, W. S.; Su, C. Y.; Lee, Y. C.; Lin, S. P.; Yang, Tony

2006-07-01

In this study, the influence of CaZrO3 doped with three dopants, SiO2, MnO, and Nb2O5, and then sintered in a reducing atmosphere on microstructure, phase formation, and electrical properties is investigated. SiO2 plays the role of sintering aid to enhance the density of CaZrO3 leading to better performance of electrical properties as a function of SiO2 content. MnO, and Nb2O5 were incorporated into the Zr-site of CaZrO3 to make stoichometric CaZrO3 into non-stoichiometric CaZrO3 with Zr excess resulting in the formation of a second phase, CaZr4O9, which has a lower dielectric constant (13) in comparison with that of the main phase of CaZrO3 (32). Thus, the dielectric constant of CaZrO3 doped with Nb2O5, or MnO is decreased markedly. In addition, Mn+2 incorporated into Zr-sites of CaZrO3 plays the role of acceptor, which compensates for the number of conduction electrons and contributes to better performance of electrical properties such as insulation resistance and \\tanδ. Conversely, Nb+5 incorporated into Zr-sites of CaZrO3 plays the role of donor and provides more conduction electrons, leading to poor performance of electrical properties.
Fabrication of CuAl1-xMxO2 (M = Fe, Cr)/Ni film delafossite compounds using spin coating and their microstructure and dielectric constant

NASA Astrophysics Data System (ADS)

Diantoro, Markus; Yuwita, Pelangi Eka; Olenka, Desyana; Nasikhudin

2014-09-01

The discovery of delafossite compound has encouraged more rapid technological developments particularly in transparent electronic devices. Copper oxide-based transparent thin films delafossite semiconductor recently give much attention in the field of optoelectronic technology, after the discovery of p-type CuAlO2. The potential applications of a p-type semiconductor transparent conductive oxides (TCO) have been applied in broad field of optoelectronics. To explore a broad physical properties interms of magnetic conducting subtitution is understudied. In this work we report the fabrication of delafossite film on Ni substrate and their characterization of CuAl1-xMxO2 delafossite compounds doped with Cr3+ and Fe3+ from the raw material of Cu(NO3)2˙3H2O, Al(NO3)3˙9H2O, Fe(NO3)3˙9H2O and Cr(NO3)3˙9H2O. The films were prepared using spin coating through a sol-gel technique at various concentrations of x = 0, 0.03, 0.04, and 0.05 for chromium and x = 0, 0.02, 0.04, 0.06, and 0.08 for iron doped. Crystal and microstructure were characterized by means of Cu-Kα Bragg-Brentano X-RD followed by High Score Plus and SEM-EDAX. The dielectric constants of the films were characterized using LCR meter. It was found that the CuAl1-xMxO2/Ni delafossite films were successfully fabricated. The CuAl1-xFexO2 compound crystallized with lattice parameters of a = b ranged from 2.8603 Å to 2.8675 Å and c ranged from 16.9576 to 17.0763 Å. The increase of the dopant give rise to the increase of the lattice parameters. Since iron has bigger ionic radius (69 pm) than original site of Al3+ with radius of 53 pm the crystal volume lattice also increase. Further analyses of increasing volume of the crystal, as expected, affected to the decreasing of its dielectric constant. The similar trends also shown by Cr3+ doped of CuAl1-xCrxO2 films with smaller effects.
Microstructure, mixing rules and interfacial behavior in high k barium titanate epoxy composite

NASA Astrophysics Data System (ADS)

Shi, Yitong (Thomas)

2001-07-01

In this thesis, we have demonstrated the importance of two issues in BaTiO3/epoxy composites. They are (1) the miscibility of a particle blend in organic vehicle, i.e. the capability of particles with different particle sizes to mix at the particle level, and (2) the ceramic/polymer interface as a role in determining the effective dielectric constant. The epoxy matrix between the BaTiO3 particles is not homogeneous and has to be modeled as a two-layer structure. The inhomogeneity causes not only failure of the existing mixing rules but also the particle size dependence of the effective dielectric constant. Since the interfacial behavior is determined by the materials chemistry, the effective dielectric properties experimentally demonstrate strong dependence on the materials selection and processing. If BaTiO3 particles in liquid epoxy resin has a bimodal particle size distribution, the smaller particles do not experimentally fit into the interstitial spaces between the larger spheres in an organic vehicle. ESEM observations indicated that the large particles separated from the small ones. Depending on the paste formula, the particle separation led to either a layer-like or cluster-like microstructure. The mixing free energy of blending smaller particles with larger particles explains the observed phenomena and suggests general criteria for particle miscibility. Whenever the mixing free energy is negative and the mixing free energy curve is convex, the particle blend remains in a random particle distribution. Otherwise, the particles separate into a larger-particle rich "phase" and a smaller-particle rich "phase". A random particle distribution may be the largest degree of mixing we can achieve in an organic vehicle. If there is no specific interaction between the small particles and the large particles, there is no thermodynamic driving force for small particles to fill preferentially into the interstitial spaces between the large spheres. The Hamaker constant H significantly influences the miscibility of a particle blend. An increase in Hamaker constant H causes not only greater driving force for a particle blend to separate but also a more narrowed convex shape---the mixing window. At a specific composition, a particle blend separates in one vehicle but may remain in a random distribution in another vehicle if the later vehicle has significantly reduced the Hamaker constant H.
Four-Element Composite Triangular Dielectric Resonator Antenna Using Li2O-1.94MgO-0.02Al2O3-P2O5 Ceramic for Wideband Applications

NASA Astrophysics Data System (ADS)

Kumari, Preeti; Tripathi, Pankaj; Sahu, B.; Singh, S. P.; Kumar, Devendra

2018-05-01

A simulation and fabrication study of a coaxial probe-fed four-element composite triangular dielectric resonator antenna (TDRA) using low loss Li2O-1.94MgO-0.02Al2O3-P2O5 (LMAP) ceramic and Teflon. LMAP ceramic was carried out and the ceramic was synthesized using a solid-state sintering route. The phase, microstructure and microwave dielectric properties of LMAP were investigated using x-ray diffraction pattern, scanning electron microscopy and a network analyzer. A coaxial probe-fed four-element composite TDRA was designed and fabricated using LMAP as one section of each composite element of the proposed antenna. Each triangular element of the proposed dielectric resonator antenna (DRA) consists of two sections of different dielectric constant materials. The inner triangular section touching the coaxial probe at one of its corners is made of the LMAP ceramic (ɛ r = 6.2) while othe uter section is made of Teflon (ɛ r = 2.1). Four triangular DRA elements are excited bya centrally located 50-Ω coaxial probe. The parametric study of the proposed antenna was performed through simulation using Ansys High Frequency Structure Simulator software by varying the dimensions and dielectric constants of both sections of each triangular element of the TDRA to optimize the results for obtaining a wideband antenna. The simulated resonant frequency of 9.30 GHz with a percentage bandwidth of 61.65% for the proposed antenna is obtained within its operating frequency range of 7.82-14.8 GHz. Monopole-like radiation patterns with low cross-polarization levels and a peak gain of 5.63 dB are obtained for the proposed antenna through simulation. The antenna prototype having optimized dimensions has also been fabricated. The experimental resonant frequency of 9.10 GHz with a percentage bandwidth of 66.09% is obtained within its operating frequency range of 7.70-15.30 GHz. It is found that the simulation results for the proposed antenna are in close agreement with the measured data. The proposed antenna can potentially be used in broadcast base stations, radar and satellite communications.
Impact of substrate on structure and electrical properties in lead-based ferroelectric thin films

NASA Astrophysics Data System (ADS)

Valanoor, Nagarajan Venkatasubramanian

Current trends in semiconductor technology demand that ferroelectric materials be used in thin film form, rather than bulk, for integration and scaling purposes. An inevitable consequence of integration is substrate induced constraint and stress. Sources of this stress are the lattice and thermal mismatch between film and substrate, structural phase transformation which leads to spontaneous strains, and dislocation cores at the film substrate interface. In addition to classical stress relaxation mechanisms all highly tetragonal ferroelectrics relax internal stress via formation of polydomain (90° domains and not 180° domains) structures below the phase transformation, which brings about a change in the microstructure of the film. Hence it is possible to control the resultant microstructure by controlling the degree of polydomain relaxation. Obviously this affects the electrical and electro-mechanical properties and in turn the device performance. The goal of this research is to study this structure-property relationship of ferroelectric thin films where in the structure has been systematically modified by changing the substrate-induced effect. To investigate the effect of the substrate, epitaxial films of PbZr 0.2Ti0.8O3 were grown by pulsed laser deposition (PLD). Epitaxial films reduce the complexities introduced grain boundaries and multiple domain orientations. By systematically changing the thickness the spontaneous strain or c/a ratio can be varied. As a consequence polydomain formation varies as a function of film thickness. Thus this is an effective yet simple method to fully understand the impact of stress on structure-property inter-relationships. The theoretical background for these experiments is first laid out by a thermodynamic analysis of the polydomain formation. It leads to the construction of a domain stability map and indicates a presence of a critical thickness for polydomain formation. This is followed by an investigation of the impact of polydomain formation on quasi-static and dynamic polarization switching. To correlate the material microstructure to switching, an activation field, alpha, is introduced. It is shown theoretically that alpha ∝ (c/a-1)3.5 and a good experimental fit can be obtained. However it is observed that polydomain formation does not impact the electromechanical and dielectric response significantly. It is shown experimentally and theoretically that stress-induced polarization varies only by 10%. Therefore to study the impact of in plane stresses induced by substrate on piezoelectric and dielectric response we chose a "soft" relaxor ferroelectric (RFE) wherein the Curie temperature is close to room temperature. In this case even a small application of stress can change the properties significantly. The relaxor composition chosen was PbMg1/3Nb 2/3O3(90%)-PbTiO3(10%). By systematically changing the substrate and the thickness, stresses in the film the electromechanical constants is varied. High-resolution electron microscopy revealed a distinct change in the microstructure as a function of thickness, and a probable answer as to why thin films show inferior properties compared to bulk materials is proposed. The last part of this thesis focuses on the effect of micro stresses. Two examples are demonstrated where the mechanical forces of interaction between the film and substrate are manipulated on a very local scale. We show that by inducing stresses at local regions one can induce polydomains in film thinner than previously calculated critical thickness, while by removing constraint at local regions we can enhance the d33 co-efficient to values higher than those shown by bulk ceramics.
Electrical properties and scaling behaviour of rare earth based Ho{sub 2}CoZrO{sub 6} double perovskite ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahato, Dev K., E-mail: drdevkumar@yahoo.com; Dutta, Alo; Sinha, T.P.

2012-12-15

Graphical abstract: The X-ray diffraction analysis suggests that the compound crystallizes in monoclinic phase at room temperature with β = 108.51 ± 0.021° (a = 8.1858 ± 0.0023 Å, b = 5.2599 ± 0.0027 Å, c = 7.9874 ± 0.0031 Å) and cell volume = 324.17 Å{sup 3}. The SEM image indicates the uniformity of the grains in the samples. The grain size of the microstructure of HCZ is found to be ∼0.48 μm on average. Display Omitted Highlights: ► The conduction mechanism in HCZ may be due to hopping of small polaron. ► The material shows semiconducting behaviour. ►more » Conductivity obeys Jonscher's power law with high frequency dispersion. ► Both long-range and localized relaxation are present. -- Abstract: The Ho{sub 2}CoZrO{sub 6} (HCZ) double perovskite has been prepared in polycrystalline form by solid state reaction technique. The analysis of the X-ray powder diffraction pattern indicates that the crystal structure is monoclinic at room temperature with cell parameters a = 8.1858 ± 0.0023 Å, b = 5.2599 ± 0.0027 Å, c = 7.9874 ± 0.0031 Å and β = 108.51 ± 0.021°. The compound shows significant frequency dispersion in its dielectric properties. The Cole–Cole model is used to determine the polydispersive nature of dielectric relaxation. The scaling behaviour of dielectric loss and imaginary electric modulus suggest that the relaxation describe same mechanism at various temperatures. Impedance data presented in the Nyquist plot (Z″ versus Z′) are used to identify an equivalent circuit and to know the bulk and interface contributions. The complex impedance analysis of HCZ exhibits the appearance of both the grain and the grain-boundary contribution. The frequency dependent conductivity spectra follow the universal power law. The magnitude of the activation energy indicates that the carrier transport is due to the hopping conduction.« less
On the dielectric dispersion and absorption in nanosized manganese zinc mixed ferrites.

PubMed

Veena Gopalan, E; Malini, K A; Sakthi Kumar, D; Yoshida, Yasuhiko; Al-Omari, I A; Saravanan, S; Anantharaman, M R

2009-04-08

The temperature and frequency dependence of dielectric permittivity and dielectric loss of nanosized Mn(1-x)Zn(x)Fe(2)O(4) (for x = 0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The impact of zinc substitution on the dielectric properties of the mixed ferrite is elucidated. Strong dielectric dispersion and broad relaxation were exhibited by Mn(1-x)Zn(x)Fe(2)O(4). The variation of dielectric relaxation time with temperature suggests the involvement of multiple relaxation processes. Cole-Cole plots were employed as an effective tool for studying the observed phenomenon. The activation energies were calculated from relaxation peaks and Cole-Cole plots and found to be consistent with each other and indicative of a polaron conduction.
Parameters design of the dielectric elastomer spring-roll bending actuator (Conference Presentation)

NASA Astrophysics Data System (ADS)

Li, Jinrong; Liu, Liwu; Liu, Yanju; Leng, Jinsong

2017-04-01

Dielectric elastomers are novel soft smart material that could deform sustainably when subjected to external electric field. That makes dielectric elastomers promising materials for actuators. In this paper, a spring-roll actuator that would bend when a high voltage is applied was fabricated based on dielectric elastomer. Using such actuators as active parts, the flexible grippers and inchworm-inspired crawling robots were manufactured, which demonstrated some examples of applications in soft robotics. To guide the parameters design of dielectric elastomer based spring-roll bending actuators, the theoretical model of such actuators was established based on thermodynamic theories. The initial deformation and electrical induced bending angle of actuators were formulated. The failure of actuators was also analyzed considering some typical failure modes like electromechanical instability, electrical breakdown, loss of tension and maximum tolerant stretch. Thus the allowable region of actuators was determined. Then the bending angle-voltage relations and failure voltages of actuators with different parameters, including stretches of the dielectric elastomer film, number of active layers, and dimensions of spring, were investigated. The influences of each parameter on the actuator performances were discussed, providing meaningful guidance to the optical design of the spring-roll bending actuators.
Measurement of the trapping and detrapping properties of polymers in relation with their microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vallayer, B.; Hourquebie, P.; Marsacq, D.

1996-12-31

In the field of Space Charge Physics, the role of electrical traps on space charge behavior and therefore on the breakdown properties has been now well-established. However, the traps in polymers are very difficult to define compared to the case of ceramics for which a lot of studies have been performed. A new specific method for measuring the trapping and detrapping properties of dielectric materials has been developed. This method allows to characterize the electrostatic state of an insulating sample after irradiation by a high energy electron beam. The authors discuss the basis of the method and its general possibilitiesmore » to measure the breakdown relevant parameters as the secondary electron yield for instance. Moreover, the method has been used on several polymers as HDPE and LDPE. The difference of trapping properties between those materials can be explained by microstructure evolutions (crystallinity ratio) due to a difference of the branching rate. This difference of trapping and detrapping properties of these two polymers could be connected to the breakdown behavior of the two materials which is known to be very different.« less
Hollow glass for insulating layers

NASA Astrophysics Data System (ADS)

Merticaru, Andreea R.; Moagar-Poladian, Gabriel

1999-03-01

Common porous materials, some of which will be considered in the chapters of this book, include concrete, paper, ceramics, clays, porous semiconductors, chromotography materials, and natural materials like coral, bone, sponges, rocks and shells. Porous materials can also be reactive, such as in charcoal gasification, acid rock dissolution, catalyst deactivation and concrete. This study continues the investigations about the properties of, so-called, hollow glass. In this paper is presented a computer simulation approach in which the thermo-mechanical behavior of a 3D microstructure is directly computed. In this paper a computer modeling approach of porous glass is presented. One way to test the accuracy of the reconstructed microstructures is to computed their physical properties and compare to experimental measurement on equivalent systems. In this view, we imagine a new type of porous type of glass designed as buffer layer in multilayered printed boards in ICs. Our glass is a variable material with a variable pore size and surface area. The porosity could be tailored early from the deposition phases that permitting us to keep in a reasonable balance the dielectric constant and thermal conductivity.
Alternating-current conductivity and dielectric relaxation of bulk iodoargentate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Hai-Bao, E-mail: duanhaibao4660@163.com; Yu, Shan-Shan; Zhou, Hong

Graphical abstract: The electric modulus shows single dielectric relaxation process in the measured frequency range. - Highlights: • The conduction mechanism is described by quantum mechanical tunneling model. • The applications of dielectric modulus give a simple method for evaluating the activation energy of the dielectric relaxation. • The [Ag{sub 2}I{sub 4}]{sup 2−}1-D chain and [Cu(en){sub 2}]{sup 2+} cation column form the layered stacks by hydrogen bond interactions. - Abstract: An inorganic-organic hybrid compound Cu(en){sub 2}Ag{sub 2}I{sub 4} (en = ethylenediamine) (1) was synthesized and single crystal structurally characterized. Along the [001] direction, the inorganic parts form an infinite 1-Dmore » chain and [Cu(en){sub 2}]{sup 2+} cations are separated by inorganic chain. The electrical conductivity and dielectric properties of 1 have been investigated over wide ranges of frequency. The alternating-current conductivities have been fitted to the Almond–West type power law expression with use of a single value of S. It is found that S values for 1 are nearly temperature-independent, which indicates that the conduction mechanism could be quantum mechanical tunneling (QMT) model. The dielectric loss and electric modulus show single dielectric relaxation process. The activation energy obtained from temperature-dependent electric modulus compare with the calculated from the dc conductivity plots.« less
Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

NASA Astrophysics Data System (ADS)

Yıldırım, M.; Şahin, C.; Altındal, Ş.; Durmuş, P.

2017-03-01

An Au/Bi4Ti3O12/ n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage ( V) range of -4 V and 6 V. Capacitance ( C) and conductance ( G/ω) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C -2- V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (˜1012 eV-1 cm-2) was obtained for surface states ( N ss); however, N ss first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as ˜10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/ n-Si SBD.
Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borkar, Hitesh; Barvat, Arun; Pal, Prabir

2016-06-07

The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction.more » X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.« less
Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface.

PubMed

Lee, Seung-Hoon; Xu, Yong; Khim, Dongyoon; Park, Won-Tae; Kim, Dong-Yu; Noh, Yong-Young

2016-11-30

Charge transport in carbon nanotube network transistors strongly depends on the properties of the gate dielectric that is in direct contact with the semiconducting carbon nanotubes. In this work, we investigate the dielectric effects on charge transport in polymer-sorted semiconducting single-walled carbon nanotube field-effect transistors (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (ε r ) fluoropolymer (CYTOP, ε r = 1.8), poly(methyl methacrylate) (PMMA, ε r = 3.3), and a high-ε r ferroelectric relaxor [P(VDF-TrFE-CTFE), ε r = 14.2]. The s-SWNT-FETs with polymer dielectrics show typical ambipolar charge transport with high ON/OFF ratios (up to ∼10 5 ) and mobilities (hole mobility up to 6.77 cm 2 V -1 s -1 for CYTOP). The s-SWNT-FET with the lowest-k dielectric, CYTOP, exhibits the highest mobility owing to formation of a favorable interface for charge transport, which is confirmed by the lowest activation energies, evaluated by the fluctuation-induced tunneling model (FIT) and the traditional Arrhenius model (E aFIT = 60.2 meV and E aArr = 10 meV). The operational stability of the devices showed a good agreement with the activation energies trend (drain current decay ∼14%, threshold voltage shift ∼0.26 V in p-type regime of CYTOP devices). The poor performance in high-ε r devices is accounted for by a large energetic disorder caused by the randomly oriented dipoles in high-k dielectrics. In conclusion, the low-k dielectric forms a favorable interface with s-SWNTs for efficient charge transport in s-SWNT-FETs.
Reconfigurable Optical Elements Based on Single and Coupled Microdisk Resonators with Quantum DOT Active Media

DTIC Science & Technology

2012-06-29

of active-passive integrated polymer waveguides. The active waveguides consist of CdSe quantum dots dispersed in SU8 . Bottom panel shows CCD images...successfully demonstrated (i) incorporation of CdSe QDs into polymer and dielectric host and realization of devices such as active waveguides, microdisk...the significant outcomes of the program: • Successful incorporation of CdSe QDs into polymer and dielectric host and realization of devices such as
Dissipated power and induced velocity fields data of a micro single dielectric barrier discharge plasma actuator for active flow control☆

PubMed Central

Pescini, E.; Martínez, D.S.; De Giorgi, M.G.; Francioso, L.; Ficarella, A.

2015-01-01

In recent years, single dielectric barrier discharge (SDBD) plasma actuators have gained great interest among all the active flow control devices typically employed in aerospace and turbomachinery applications [1,2]. Compared with the macro SDBDs, the micro single dielectric barrier discharge (MSDBD) actuators showed a higher efficiency in conversion of input electrical power to delivered mechanical power [3,4]. This article provides data regarding the performances of a MSDBD plasma actuator [5,6]. The power dissipation values [5] and the experimental and numerical induced velocity fields [6] are provided. The present data support and enrich the research article entitled “Optimization of micro single dielectric barrier discharge plasma actuator models based on experimental velocity and body force fields” by Pescini et al. [6]. PMID:26425667
Spectral characterization of porous dielectric subwavelength THz fibers fabricated using a microstructured molding technique.

PubMed

Dupuis, Alexandre; Mazhorova, Anna; Désévédavy, Frédéric; Rozé, Mathieu; Skorobogatiy, Maksim

2010-06-21

We report two novel fabrication techniques, as well as THz spectral transmission and propagation loss measurements of subwavelength plastic wires with highly porous (up to 86%) and non-porous transverse geometries. The two fabrication techniques we describe are based on the microstructured molding approach. In one technique the mold is made completely from silica by stacking and fusing silica capillaries to the bottom of a silica ampoule. The melted material is then poured into the silica mold to cast the microstructured preform. Another approach uses a microstructured mold made of a sacrificial plastic which is co-drawn with a cast preform. Material from the sacrificial mold is then dissolved after fi ber drawing. We also describe a novel THz-TDS setup with an easily adjustable optical path length, designed to perform cutback measurements using THz fibers of up to 50 cm in length. We fi nd that while both porous and non-porous subwavelength fibers of the same outside diameter have low propagation losses (alpha

Application of the compensated Arrhenius formalism to explain the dielectric constant dependence of rates for Menschutkin reactions.

PubMed

Petrowsky, Matt; Glatzhofer, Daniel T; Frech, Roger

2013-11-21

The dependence of the reaction rate on solvent dielectric constant is examined for the reaction of trihexylamine with 1-bromohexane in a series of 2-ketones over the temperature range 25-80 °C. The rate constant data are analyzed using the compensated Arrhenius formalism (CAF), where the rate constant assumes an Arrhenius-like equation that also contains a dielectric constant dependence in the exponential prefactor. The CAF activation energies are substantially higher than those obtained using the simple Arrhenius equation. A master curve of the data is observed by plotting the prefactors against the solvent dielectric constant. The master curve shows that the reaction rate has a weak dependence on dielectric constant for values approximately less than 10 and increases more rapidly for dielectric constant values greater than 10.
Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.
Dielectric and modulus analysis of the photoabsorber Cu2SnS3

NASA Astrophysics Data System (ADS)

Lahlali, S.; Essaleh, L.; Belaqziz, M.; Chehouani, H.; Alimoussa, A.; Djessas, K.; Viallet, B.; Gauffier, J. L.; Cayez, S.

2017-12-01

Dielectric properties of the ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C with the frequency range 1 kHz to 1 MHz. The dielectric constant ε ‧ and dielectric loss tan (δ) were observed to increase with temperature and decrease rapidly with frequency to remains constant at high frequencies. The variation of the dielectric loss Ln (ε ") with L n (ω) was found to follow the empirical law, ε " = B ω m (T). The dielectric data were analyzed using complex electrical modulus M* at various temperatures. The activation energy responsible for the relaxation is estimated from the analysis of the modulus spectra. The value of the hopping barrier potential is estimated from the dielectric loss and compared with the value previously obtained from ac-conductivity. These results are critical for understanding the behavior of based polycrystalline family of Cu2SnS3 for absorber materials in solar-cells.
Solution-processable alumina: PVP nanocomposite dielectric layer for high-performance organic thin-film transistors

NASA Astrophysics Data System (ADS)

Lin, Hui; Kong, Xiao; Li, Yiran; Kuang, Peng; Tao, Silu

2018-03-01

In this article, we have investigated the effect of nanocomposite gate dielectric layer built by alumina (Al2O3) and poly(4-vinyphenol) (PVP) with solution method which could enhance the dielectric capability and decrease the surface polarity. Then, we used modify layer to optimize the surface morphology of dielectric layer to further improve the insulation capability, and finally we fabricated the high-performance and low-voltage organic thin-film transistors by using this nanocomposite dielectric layer. The result shows that the devices with Al2O3:10%PVP dielectric layer with a modified layer exhibited a mobility of 0.49 cm2/Vs, I on/Ioff ratio of 7.8 × 104, threshold voltage of - 1.2 V, sub-threshold swing of 0.3 V/dec, and operating voltage as low as - 4 V. The improvement of devices performance was owing to the good insulation capability, appropriate capacitance of dielectric layer, and preferable interface contact, smaller crystalline size of active layer.
γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

NASA Astrophysics Data System (ADS)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.
Development of a method to analyze single cell activity by using dielectrophoretic levitation.

PubMed

Hakoda, M; Hachisu, T; Wakizaka, Y; Mii, S; Kitajima, N

2005-01-01

In cell fusion and genetic recombination, although the activity of single cells is extremely important, there is no method to analyze single cell activity. Development of a quick analyzing method for single cell activity is desired in various fields. Dielectrophoresis (DEP) refers to the force exerted on the induced dipole moment of an uncharged dielectric and/or conductive particle by a nonuniform electric field. By applying DEP, we obtained experimentally a relationship between the cell activity and the dielectric property, Re[K(omega)], and examined how to evaluate the single cell activity by measuring Re[K(omega)] of a single cell. A cone and plate electrode geometry was adapted in order to achieve the feedback-controlled DEP levitation. The single cell is exposed to a nonuniform field induced by the cone and plate electrode, and a more polarizable cell is moved to the direction of the cone electrode by the DEP force. The cell settles in the position where the DEP force and gravity are balanced by controlling applied voltage. This settled position, measured on the center axis of the cone electrode, depended on the dielectric constant of the cell. From these results, the relationship between the specific growth rates in cell growth phase and the dielectric properties Re[K(omega)] was obtained. Furthermore, the effect on the cell activity of various stresses, such as concentration of carbon dioxide, temperature, etc., was examined.
Mixed conduction and grain boundary effect in lithium niobate under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qinglin; Center for High Pressure Science and Technology Advanced Research, Changchun 130012; Liu, Cailong

2015-03-30

The charge transport behavior of lithium niobate has been investigated by in situ impedance measurement up to 40.6 GPa. The Li{sup +} ionic conduction plays a dominant role in the transport process. The relaxation process is described by the Maxwell-Wagner relaxation arising at the interfaces between grains and grain boundaries. The grain boundary microstructure rearranges after the phase transition, which improves the bulk dielectric performance. The theoretical calculations show that the decrease of bulk permittivity with increasing pressure in the Pnma phase is caused by the pressure-induced enhancement of electron localization around O atoms, which limits the polarization of Nb-O electricmore » dipoles.« less
Low-loss and tunable near-zero-epsilon titanium nitride

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Schmidt, E.; Schöppe, P.; Bibić, N.; Ronning, C.; Rakočević, Z.

2017-10-01

Titanium nitride (TiN) has emerged as alternative plasmonic material in the visible and near-infrared spectral range due to its metallic properties. We studied the influence of silver ion implantation (fluence range from 0.5 × 1016-6 × 1016 ions/cm2) on the structural and optical properties of reactively sputtered 260 nm thick TiN films. The columnar structure was partially destroyed by the irradiation and up to 5 at.% of Ag was incorporated into the films within the projected ion range. The formation of cubic Ag nanoparticles with size of 1-2 nm was observed by high resolution transmission electron microscopy and subsequent fast Fourier transform analysis. This presence of Ag within the TiN matrix drastically changes both the real and imaginary component of the dielectric function and provides low optical losses. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the silver influence on the optical behavior of TiN. With increasing ion fluence, the unscreened plasma frequency decreased and broadening increased. The energy, strength and broadening of the interband transitions were studied with respect to the silver ion fluence and correlated with the microstructural changes induced in TiN films.
Effects of crystallization interfaces on irradiated ferroelectric thin films

NASA Astrophysics Data System (ADS)

Brewer, S. J.; Williams, S. C.; Cress, C. D.; Bassiri-Gharb, N.

2017-11-01

This work investigates the role of crystallization interfaces and chemical heterogeneity in the radiation tolerance of chemical solution-deposited lead zirconate titanate (PZT) thin films. Two sets of PZT thin films were fabricated with crystallization performed at (i) every deposited layer or (ii) every three layers. The films were exposed to a range of 60Co gamma radiation doses, between 0.2 and 20 Mrad, and their functional response was compared before and after irradiation. The observed trends indicate enhancements of dielectric, ferroelectric, and piezoelectric responses at low radiation doses and degradation of the same at higher doses. Response enhancements are expected to result from low-dose (≤2 Mrad), ionizing radiation-induced charging of internal interfaces—an effect that results in neutralization of pre-existing internal bias in the samples. At higher radiation doses (>2 Mrad), accumulation and self-ordering of radiation-modified, mobile, oxygen vacancy-related defects contribute to degradation of dielectric, ferroelectric, and piezoelectric properties, exacerbated in the samples with more crystallization layers, potentially due to increased defect accumulation at these internal interfaces. These results suggest that the interaction between radiation and crystallization interfaces is multifaceted—the effects of ionization, domain wall motion, point defect mobility, and microstructure are considered.
Microstructure and dielectric properties of BZT-BCT/PVDF nanocomposites

NASA Astrophysics Data System (ADS)

Chi, Qingguo; Liu, Guang; Zhang, Changhai; Cui, Yang; Wang, Xuan; Lei, Qingquan

2018-03-01

In this paper, the 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 nanofibers (BZT-BCT NFs) with high aspect ratio were synthesized by electrospinning technique, and the PVDF-based composites filled with the BT NPs or BZT-BCT NFs were fabricated. Obviously, compared to the BT NPs/PVDF composite, the dielectric properties of BZT-BCT NFs/PVDF composites are improved at given volume fraction. The electric modulus formalism indicated that the BZT-BCT NFs could effectively enhance the interfacial polarization of the BZT-BCT NFs/PVDF composites than that of the BT NPs/PVDF composite. In addition, the BZT-BCT NFs with large aspect ratio can make the composites polarize at a higher field strength, thus the composites obtain higher polarization strength. The energy density of 3 vol% BZT-BCT NFs/PVDF composite is 3.08 J/cm3 at 240 kV/mm, which is 2.01 times higher enhancement than the BT NPs/PVDF composite (1.53 J/cm3 at 180 kV/mm). These results also provide a simple but effective method to achieve the materials with high capacitance for energy storage.
Effect of hydrated salts on the microstructure and phase transformation of poly(vinylidenefluoride-hexafluoropropylene) composites

NASA Astrophysics Data System (ADS)

Yuennan, Jureeporn; Sukwisute, Pisan; Muensit, Nantakan

2018-05-01

The present work has investigated a means of fabricating porous, β phase P(VDF-HFP) film by adding two kinds of hydrated metal salts. Without the use of mechanical stretching or electrical poling treatments, MgCl2 · 6H2O and AlCl3 · 6H2O are found to induce the formation of β phase crystals in porous film derived from the solution casting method. Trivalent Al ions have been found to effectively promote the self-oriented β phase of the P(VDF-HFP) film greater than divalent Mg ions. The overall β content is achieved about 38% and 42% for adding 0.25 wt% Mg- and Al-salts, respectively. The average pore sizes and surface roughness of porous P(VDF-HFP) films are increased with increasing salt concentration. The dielectric constant of about 5 for pure P(VDF-HFP) film (at 100 Hz) has been boosted up to 13–19 when adding the salts. In addition, the P(VDF-HFP) films filled with Al-salt exhibit the largest piezoelectric coefficient of 20 pC/N. Thus, the modified polymers are one of candidate materials for using in dielectric and piezoelectric applications.
Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

PubMed Central

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-01

Dense and crack-free barium titanate (BaTiO3, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film. PMID:28787860
Effects of Process Parameters and Cryotreated Electrode on the Radial Overcut of Aisi 304 IN SiC Powder Mixed Edm

NASA Astrophysics Data System (ADS)

Bhaumik, Munmun; Maity, Kalipada

Powder mixed electro discharge machining (PMEDM) is further advancement of conventional electro discharge machining (EDM) where the powder particles are suspended in the dielectric medium to enhance the machining rate as well as surface finish. Cryogenic treatment is introduced in this process for improving the tool life and cutting tool properties. In the present investigation, the characterization of the cryotreated tempered electrode was performed. An attempt has been made to study the effect of cryotreated double tempered electrode on the radial overcut (ROC) when SiC powder is mixed in the kerosene dielectric during electro discharge machining of AISI 304. The process performance has been evaluated by means of ROC when peak current, pulse on time, gap voltage, duty cycle and powder concentration are considered as process parameters and machining is performed by using tungsten carbide electrodes (untreated and double tempered electrodes). A regression analysis was performed to correlate the data between the response and the process parameters. Microstructural analysis was carried out on the machined surfaces. Least radial overcut was observed for conventional EDM as compared to powder mixed EDM. Cryotreated double tempered electrode significantly reduced the radial overcut than untreated electrode.
Proposed Laser-driven, Dielectric Microstructure Few-cm Long Undulator for Attosecond Coherent X-rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plettner, T; Byer, R.L.; /Stanford U., Ginzton Lab.

This article presents the concept of an all-dielectric laser-driven undulator for the generation of coherent X-rays. The proposed laser-driven undulator is expected to produce internal deflection forces equivalent to a several-Tesla magnetic field acting on a speed-of-light particle. The key idea for this laser-driven undulator is its ability to provide phase synchronicity between the deflection force and the electron beam for a distance that is much greater than the laser wavelength. The potential advantage of this undulator is illustrated with a possible design example that assumes a small laser accelerator which delivers a 2 GeV, 1 pC, 1 kHz electronmore » bunch train to a 10 cm long, 1/2 mm period laser-driven undulator. Such an undulator could produce coherent X-ray pulses with {approx}10{sup 9} photons of 64 keV energy. The numerical modeling for the expected X-ray pulse shape was performed with GENESIS, which predicts X-ray pulse durations in the few-attosecond range. Possible applications for nonlinear electromagnetic effects from these X-ray pulses are briefly discussed.« less
Antireflection coating on metallic substrates for solar energy and display applications

NASA Astrophysics Data System (ADS)

Hsiao, Wei-Yuan; Tang, Chien-Jen; Lee, Kun-Hsien; Jaing, Cheng-Chung; Kuo, Chien-Cheng; Chen, Hsi-Chao; Chang, Hsing-Hua; Lee, Cheng-Chung

2010-08-01

Normally metallic films are required for solar energy and display related coatings. To increase the absorbing efficiency or contrast, it is necessary to apply an antireflection coating (ARC) on the metal substrate. However, the design of a metal substrate is very different from the design of a dielectric substrate, since the optical constant of metallic thin film is very dependent on its thickness and microstructure. In this study, we design and fabricate ARCs on Al substrates using SiO2 and Nb2O5 as the dielectric materials and Nb for the metal films. The ARC successfully deposited on the Al substrate had the following structure: air/SiO2/Nb2O5/Metal/Nb2O5/Al. The measured average reflectance of the ARC is less than 1% in the visible region. We found that it is better to use a highly refractive material than a low refractive material. The thickness of the metallic film can be thicker with the result that it is easier to control and has a lesser total thickness. The total thickness of the ARC is less than 200 nm. We successfully fabricated a solar absorber and OLED device with the ARC structure were successfully fabricated.
Defects in codoped NiO with gigantic dielectric response

NASA Astrophysics Data System (ADS)

Wu, Ping; Ligatchev, Valeri; Yu, Zhi Gen; Zheng, Jianwei; Sullivan, Michael B.; Zeng, Yingzhi

2009-06-01

We combine first-principles, statistical, and phenomenological methods to investigate the electronic and dielectric properties of NiO and clarify the nature of the gigantic dielectric response in codoped NiO. Unlike previous models which are dependent on grain-boundary effects, our model based on small polaron hopping in homogeneous material predicts the dielectric permittivity (104-5) for heavily Li- and MD -codoped NiO (MD=Ti,Al,Si) . Furthermore, we reproduce the experimental trends in dielectric properties as a function of the dopants nature and their concentrations, as well as the reported activation energies for the relaxation in Li- and Ti-codoped NiO (0.308 eV or 0.153 eV depending on the Fermi-level position). In this study, we demonstrate that small polaron hopping on dopant levels is the dominant mechanism for the gigantic dielectric response in these codoped NiO.
Dielectric elastomer actuators for facial expression

NASA Astrophysics Data System (ADS)

Wang, Yuzhe; Zhu, Jian

2016-04-01

Dielectric elastomer actuators have the advantage of mimicking the salient feature of life: movements in response to stimuli. In this paper we explore application of dielectric elastomer actuators to artificial muscles. These artificial muscles can mimic natural masseter to control jaw movements, which are key components in facial expressions especially during talking and singing activities. This paper investigates optimal design of the dielectric elastomer actuator. It is found that the actuator with embedded plastic fibers can avert electromechanical instability and can greatly improve its actuation. Two actuators are then installed in a robotic skull to drive jaw movements, mimicking the masseters in a human jaw. Experiments show that the maximum vertical displacement of the robotic jaw, driven by artificial muscles, is comparable to that of the natural human jaw during speech activities. Theoretical simulations are conducted to analyze the performance of the actuator, which is quantitatively consistent with the experimental observations.
Dielectric relaxation in Li2SO4 in the intermedia-temperature regime

NASA Astrophysics Data System (ADS)

Diosa, J. E.; Vargas, R. A.; Fernández, M. E.; Albinsson, I.; Mellander, B.-E.

2005-08-01

The dielectric permittivity of polycrystalline Li2SO4 was measured from 5 Hz to 13 MHz and over the temperature range 235-460 °C. The corrected imaginary part of permittivity, , and its real part vs. frequency clearly show a new dielectric relaxation around fmax = 2 × 104 Hz at T = 256 °C, which shifts to higher frequencies (1 MHz) as the temperatures increases. The relaxation frequency (calculated from the peak position of ) vs. reciprocal T shows an activated relaxation process with activation energy Ea= 0.9 eV, which is very close to that derived from the dc conductivity, E (0.87 eV). We suggest that this dielectric relaxation could be due to the Li+ jump and SO₄^- reorientation that cause distortion and change of the local lattice polarizability inducing dipoles like LiSO₄^-.
Structural, magnetic, optical, dielectric, electrical and modulus spectroscopic characteristics of ZnFe2O4 spinel ferrite nanoparticles synthesized via honey-mediated sol-gel combustion method

NASA Astrophysics Data System (ADS)

Yadav, Raghvendra Singh; Kuřitka, Ivo; Vilcakova, Jarmila; Urbánek, Pavel; Machovsky, Michal; Masař, Milan; Holek, Martin

2017-11-01

This paper reports a honey-mediated green synthesis of ZnFe2O4 spinel ferrite nanoparticles and the effect of further annealing on structural, magnetic, optical, dielectric and electrical properties. X-ray diffraction study confirmed the well formation of ZnFe2O4 spinel ferrite crystal structure. Raman and Fourier transform infrared spectroscopy confirmed the formation of spinel ferrite crystal structure. The scanning electron microscopy study revealed the formation of spherical morphology at lower annealing temperature with achieved particle size 30-60 nm, whereas, octahedral like morphology at higher annealing temperature with particle size 50-400 nm. Magnetization measurements were carried out using a vibrating sample magnetometer at room temperature. The estimated magnetic parameter such as saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) showed variation in value with nano-crystallite size. The highest saturation magnetization (Ms) was 12.81 emu/g for as-synthesized ZnFe2O4 spinel ferrite nanoparticles, whereas, highest coercivity (Hc) was 25.77 Oe for ZnFe2O4 nanoparticles annealed at high temperature 1000 °C. UV-Visible reflectance spectroscopy showed the band gap variation from 1.90 eV to 2.14 eV with the increase of annealing temperature. The dielectric constant and dielectric loss were decreased with frequency showing the normal behavior of spinel ferrites. The variation in conductivity is explained in terms of the variation in microstructure and variation in the mobility of charge carriers associated with the cation redistribution induced by annealing or grain size. The modulus and impedance spectroscopy study revealed the influence of bulk grain and the grain boundary on the electrical resistance and capacitance of ZnFe2O4 nanoparticles. The results presented in this work are helpful for green synthesis of well-controlled size, morphology and physical properties of ZnFe2O4 nanoparticles.
Electrical characterization of Mn doped-(Ba{sub 0.3}Sr{sub 0.7})Mn{sub x}(Ti{sub 0.9}Zr{sub 0.1}){sub 1-x}O{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahmood, A.; Materials Research Laboratory, Institute of Physics & Electronics, University of Peshawar, 25120; Department of Engineering Materials, University of Sheffield, Sheffield S1 3JD

2015-12-15

Highlights: • Solid state processing of the (Ba{sub 0.3}Sr{sub 0.7})Mn{sub x}(Ti{sub 0.9}Zr{sub 0.1}){sub 1−x}O{sub 3} ceramics. • Mn incorporated on the Ti-site into the host lattice of (Ba{sub 0.3}Sr{sub 0.7})Mn{sub x}(Ti{sub 0.9}Zr{sub 0.1}){sub 1−x}O{sub 3}. • NTCR behavior was observed in the sintered samples. - Abstract: (Ba{sub 0.3}Sr{sub 0.7})Mn{sub x}(Ti{sub 0.9}Zr{sub 0.1}){sub 1-x}O{sub 3} (x = 0.00, 0.013, 0.015 and 0.05) ceramics were prepared by solid state sintering route at the 1500 °C for 6 h in air. Effect of Mn substitution on the structure of Ba{sub 0.3}Sr{sub 0.7}(Ti0{sub .9}Zr{sub 0.1}){sub 1−x}O{sub 3} perovskite was investigated systematically. Dielectric and impedancemore » spectroscopic studies were conducted to understand the electronic microstructure of the Ba{sub 0.3}Sr{sub 0.7}(Ti0{sub .9}Zr{sub 0.1}){sub 1−x}O{sub 3} ceramics. Sample with x = 0.05 showed the highest dielectric constant (ϵ{sub r} = 1826) and low dielectric loss (tanδ = 0.001) at 10 kHz, around the room temperature, while the sample with x = 0.00 showed good microwave (MW) dielectric properties (Qf{sub o} = 838 and ϵ{sub r} = 550). The impedance spectroscopic analysis confirmed the electrical homogeneity of the samples with x = 0.013, 0.015 and 0.05, where grain boundaries dominated the conduction mechanism. Similarly, the sample with x = 0.00 was found to possess both grain boundary and bulk resistive contributions.« less

Effect of annealing temperatures on the electrical conductivity and dielectric properties of Ni1.5Fe1.5O4 spinel ferrite prepared by chemical reaction at different pH values

NASA Astrophysics Data System (ADS)

Aneesh Kumar, K. S.; Bhowmik, R. N.

2017-12-01

The electrical conductivity and dielectric properties of Ni1.5Fe1.5O4 ferrite has been controlled by varying the annealing temperature of the chemical routed samples. The frequency activated conductivity obeyed Jonscher’s power law and universal scaling suggested semiconductor nature. An unusual metal like state has been revealed in the measurement temperature scale in between two semiconductor states with different activation energy. The metal like state has been affected by thermal annealing of the material. The analysis of electrical impedance and modulus spectra has confirmed non-Debye dielectric relaxation with contributions from grains and grain boundaries. The dielectric relaxation process is thermally activated in terms of measurement temperature and annealing temperature of the samples. The hole hopping process, due to presence of Ni3+ ions in the present Ni rich ferrite, played a significant role in determining the thermal activated conduction mechanism. This work has successfully applied the technique of a combined variation of annealing temperature and pH value during chemical reaction for tuning electrical parameters in a wide range; for example dc limit of conductivity ~10-4-10-12 S cm-1, and unusually high activation energy ~0.17-1.36 eV.
Preparation and characterization of bio resin natural tannin/poly (vinylidene fluoride): A high dielectric performance nano-composite for electrical storage

NASA Astrophysics Data System (ADS)

Abdalla, S.; Pizzi, A.; Al-Ghamdi, Maryam A.; AlWafi, Reem

2017-09-01

We have prepared films of polymer nano-composite (PNC) of poly [vinylidene-fluoride] (PVDF) and bio resin natural tannin (BRNT) nanoparticles. The α and γ electro-active phases were detected, and the addition of BRNT drastically increases the formation of the α-phase. Addition of BRNT produces up to 98% of electro-active phases. Robust electrostatic interactions arise between charges at the BRNT-surfaces, and differences in electron affinity between CH2 and CF2 groups created dielectric dipoles. The addition of BRNT has not only enhanced the formation of the electrically active phases but also makes each dipole in the phase has its specific characteristics for example its own relaxation time. The AC-electrical permittivity showed that the dielectric constant of 10%wt-BRNT nanoparticles in PVDF has a value 44 ε0, which is four times more than the dielectric constant of the as-prepared PVDF films. These data show the importance of these polymers as easy, flexible, and durable energy storage materials.
Infrared Reflectance Spectroscopy of Porous Silicas

NASA Astrophysics Data System (ADS)

Guiton, Theresa Anne

Fourier transform infrared (FTIR) specular reflectance spectroscopy was used to examine the fundamental phonon behavior of a series of porous silicas including porous Vycor, xerogels, aerogels, and colloidal solids. The spectra were deconvoluted using Kramers-Kronig analysis techniques, and the corresponding optical constants were determined via the Fresnel equations. The resulting spectra represent the first compilation of such data for low density silicas. The porous silicas revealed unique resonance modes for the imaginary dielectric function and energy loss function. A key distinction amongst the spectra was the change in the band shape of the antisymmetric Si-O-Si stretching modes. For instance, as the porosity level of the particulate systems increased, the peak maxima of the imaginary dielectric functions shifted to higher frequencies while the peak maxima of the associated energy loss function shifted to lower frequencies. In essence, with increasing porosity, the peak maxima of the imaginary dielectric functions and the energy loss functions were converging towards frequencies intermediate to the transverse optical and longitudinal optical modes of fused silica. A similar trend was not observed for the semi-continuous silica matrices. Maxwell Garnett effective medium modeling verified that these modes were a function of the porous microstructure and can be attributed to surface phonon modes. The effect of surface phonon modes was also evident in the absorption coefficient data. However, contrary to the traditional view that changes in the absorption spectra of porous silicas are strictly due to molecular structure, this study has demonstrated that variations can be attributed--both qualitatively and quantitatively--to electrostatic screening effects of finite particles.
Trace moisture detection in oil filled transformer by ceramic sensor

NASA Astrophysics Data System (ADS)

Saha, Debdulal; Sengupta, K.

2015-02-01

This paper reports on the suitability of thin film nano porous γ-alumina sensor for sensing parts per million (ppm) moisture present in transformer oil. Transformer oil degrades slowly by weathering, causing dielectric break down voltage of the oil to fall down. For improving this break down voltage, water must be removed from the transformer oil. Flash point of the transformer oil ranges from 150°C to 200°C.When the oil is slowly heated up to 75°C water vapour comes out from oil which is detected by ceramic sensor. The sensor is prepared from organo-metallic precursor by sol-gel process. Gold coated α-alumina substrate was dipped within the alumina hydra-sol and a thin film of γ-alumina formed on the substrate. The sensor capacitance was measured as a function of ppm moisture level. The circuit produces an output voltage which is precisely related to the absolute value of the capacitance of the dielectric material. In order to improve the sensitivity, parallel electrode structure was patterned on the nano porous dielectric. The response is sufficiently linear in extremely low ppm level moisture. A prototype hygrometer was built for detection of trace moisture in transformer oil. Porous alumina can be produced at a relatively low cost and in a variety of structural configurations. Sol- gel processing of alumina allows superior control on pore morphology, phase formation, purity and product microstructure compared to the more traditional techniques like Anodic oxidation of alumina sheets, tape cast by different sizes of alumina powder etc.
Section 1: Interfacial reactions and grain growth in ferroelectric SrBi{sub 2}Ta{sub 2}O (SBT) thin films on Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, B.D.; Zhang, X.; Desu, S.B.

1997-04-01

Much of the cost of traditional infrared cameras based on narrow-bandgap photoelectric semiconductors comes from the cryogenic cooling systems required to achieve high detectivity. Detectivity is inversely proportional to noise. Generation-recombination noise in photoelectric detectors increases roughly exponentially with temperature, but thermal noise in photoelectric detectors increases only linearly with temperature. Therefore `thermal detectors perform far better at room temperature than 8-14 {mu}m photon detectors.` Although potentially more affordable, uncooled pyroelectric cameras are less sensitive than cryogenic photoelectric cameras. One way to improve the sensitivity to cost ratio is to deposit ferroelectric pixels with good electrical properties directly on mass-produced,more » image-processing chips. `Good` properties include a strong temperature dependence of the remanent polarization, P{sub r}, or the relative dielectric constant, {epsilon}{sub r}, for sensitive operation in pyroelectric or dielectric mode, respectively, below or above the Curie temperature, which is 320 C for SBT. When incident infrared radiation is chopped, small oscillations in pixel temperature produce pyroelectric or dielectric alternating currents. The sensitivity of ferroelectric thermal detectors depends strongly on pixel microstructure, since P{sub r} and {epsilon}{sub r} increase with grain size during annealing. To manufacture SBT pixels on Si chips, acceptable SBT grain growth must be achieved at the lowest possible oxygen annealing temperature, to avoid damaging the Si chip below. Therefore current technical progress describes how grain size, reaction layer thickness, and electrical properties develop during the annealing of SBT pixels deposited on Si.« less
Dielectric relaxation and localized electron hopping in colossal dielectric (Nb,In)-doped TiO2 rutile nanoceramics.

PubMed

Tsuji, Kosuke; Han, HyukSu; Guillemet-Fritsch, Sophie; Randall, Clive A

2017-03-28

Dielectric spectroscopy was performed on a Nb and In co-doped rutile TiO 2 nano-crystalline ceramic (n-NITO) synthesized by a low-temperature spark plasma sintering (SPS) technique. The dielectric properties of the n-NITO were not largely affected by the metal electrode contacts. Huge dielectric relaxation was observed at a very low temperature below 35 K. Both the activation energy and relaxation time suggested that the electronic hopping motion is the underlying mechanism responsible for the colossal dielectric permittivity (CP) and its relaxation, instead of the internal barrier layer effect or a dipolar relaxation. With Havriliak-Negami (H-N) fitting, a relaxation time with a large distribution of dielectric relaxations was revealed. The broad distributed relaxation phenomena indicated that Nb and In were involved, controlling the dielectric relaxation by modifying the polarization mechanism and localized states. The associated distribution function is calculated and presented. The frequency-dependent a.c. conductance is successfully explained by a hopping conduction model of the localized electrons with the distribution function. It is demonstrated that the dielectric relaxation is strongly correlated with the hopping electrons in the localized states. The CP in SPS n-NITO is then ascribed to a hopping polarization.
The enhancing performance of (Ba{sub 0.85}Ca{sub 0.15}Ti{sub 0.90}Zr{sub 0.10})O{sub 3} ceramics by tuning anatase–rutile phase structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Xiaolian, E-mail: chaoxl@snnu.edu.cn; Wang, Juanjuan; Wang, Zhongming

2016-04-15

Graphical abstract: Titanium dioxide (TiO{sub 2}) with different phase structure had interesting influence on the crystal structure, microstructure, the sintering temperature and electrical properties. - Highlights: • BCZT ceramics were prepared using either anatase or rutile structures as Ti source. • Orthorhombic and tetragonal mixture structure was exhibited by adjusting Ti source. • The optimal properties were observed in BCZT ceramics with rutile titanium dioxide. - Abstract: To research effect of raw materials TiO{sub 2} with the phase structures on the crystal structure, microstructure and electrical properties of lead-free (Ba{sub 0.85}Ca{sub 0.15})(Ti{sub 0.90}Zr{sub 0.10})O{sub 3} (BCZT) ceramics, BCZT ceramics usingmore » either anatase or rutile as Ti source were synthesized by solid-state reaction. Titanium dioxide (TiO{sub 2}) with anatase/rutile phase structures had interesting influence on the crystal structure, microstructure and the sintering temperature by the X-ray diffraction and SEM, which also played an important role in improved electrical properties. The BCZT ceramics with rutile titanium dioxide demonstrated optimal piezoelectric and dielectric properties: d{sub 33} = 590 pC/N, k{sub p} = 0.46, ε{sub r} = 2810, tanδ = 0.014 and T{sub c} = 91 °C, which was obviously superior to BCZT ceramics with anatase titanium dioxide.« less
Microstructure and opto-electronic properties of Sn-rich Au-Sn diffusive solders

NASA Astrophysics Data System (ADS)

Rerek, T.; Skowronski, L.; Kobierski, M.; Naparty, M. K.; Derkowska-Zielinska, B.

2018-09-01

Microstructural and opto-electronic properties of Au ⧹ Sn and Sn ⧹ Au bilayers, obtained by sequential evaporating of metals on the Si substrate, were investigated by means of atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry. Thicknesses of individual films were established to obtain the atomic ratio of Au:Sn atoms 1:1, 1:2 and 1:4, which were favor the formation of AuSn, AuSn2 and AuSn4, respectively. However, the produced intermatallic compounds were detected as AuSn and AuSn2. Additionally, the unbounded Sn was found. The sequence of deposition of Au and Sn films as well as their thickness strongly affect on the composition, microstructure, optical and electrical properties of the produced layers. The Au ⧹ Sn (Sn on the top) layers were more smooth than Sn ⧹ Au (Au on the top) films. Generally, the Au ⧹ Sn layers exhibit a better electrical and optical properties than Sn ⧹ Au films. The optical parameters: plasma energy, free-carrier damping, mean relaxation time of conduction electrons and optical resistivity were determined from the effective complex dielectric function of the formed Au, Sn and Au-Sn films. The optical resistivity values are in the range from 17.8 μΩ cm to 85.1 μΩ cm and from 29.6 μΩ cm to 113.3 μΩ cm for Au ⧹ Sn and Sn ⧹ Au layers, respectively.
Clear microstructure-performance relationships in Mn-containing perovskite and hexaaluminate compounds prepared by activated reactive synthesis.

PubMed

Laassiri, Said; Bion, Nicolas; Duprez, Daniel; Royer, Sébastien; Alamdari, Houshang

2014-03-07

Microstructural properties of mixed oxides play essential roles in their oxygen mobility and consequently in their catalytic performances. Two families of mixed oxides (perovskite and hexaaluminate) with different microstructural features, such as crystal size and specific surface area, were prepared using the activated reactive synthesis (ARS) method. It was shown that ARS is a flexible route to synthesize both mixed oxides with nano-scale crystal size and high specific surface area. Redox properties and oxygen mobility were found to be strongly affected by the material microstructure. Catalytic activities of hexaaluminate and perovskite materials for methane oxidation were discussed in the light of structural, redox and oxygen mobility properties.
Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

NASA Astrophysics Data System (ADS)

Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

1998-03-01

We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.
Dielectric relaxation of selenium-tellurium mixed former glasses

NASA Astrophysics Data System (ADS)

Palui, A.; Ghosh, A.

2017-05-01

We report the study of dielectric properties of mixed network former glasses of composition 0.3Ag2O-0.7(xSeO2-(1-x)TeO2); x=0, 0.1, 0.3, 0.4, 0.5 and 0.6 in a wide frequency 10 Hz - 2 MHz and temperature range 223 K - 403 K. The experimental data have been analyzed in the framework of complex dielectric permittivity. The dielectric permittivity data have been analyzed using the Cole-Cole function. The inverse temperature dependence of relaxation time obtained from real part of dielectric permittivity data follows the Arrhenius relation. The activation energy shows mixed glass former effect with variation of mixed former ratio. A non-zero value of shape parameters is observed and it is almost independent of temperature and composition.
Scanning mass spectrometer for quantitative reaction studies on catalytically active microstructures.

PubMed

Roos, M; Kielbassa, S; Schirling, C; Häring, T; Bansmann, J; Behm, R J

2007-08-01

We describe an apparatus for spatially resolving scanning mass spectrometry which is able to measure the gas composition above catalytically active microstructures or arrays of these microstructures with a lateral resolution of better than 100 mum under reaction conditions and which allows us to quantitatively determine reaction rates on individual microstructures. Measurements of the three-dimensional gas composition at different vertical distances and separations between active structures allow the evaluation of gas phase mass transport effects. The system is based on a piezoelectrically driven positioning substage for controlled lateral and vertical positioning of the sample under a rigidly mounted capillary probe connecting to a mass spectrometer. Measurements can be performed at pressures in the range of <10(-2)-10 mbars and temperatures between room temperature and 450 degrees C. The performance of the setup is demonstrated using the CO oxidation reaction on Pt microstructures on Si with sizes between 100 and 300 mum and distances in the same order of magnitude, evaluating CO(2) formation and CO consumption above the microstructures. The rapidly decaying lateral resolution with increasing distance between sample and probe underlines the effects of (lateral) gas transport in the room between sample and probe. The reaction rates and apparent activation energy obtained from such measurements agree with previous data on extended surfaces, demonstrating the feasibility of determining absolute reaction rates on individual microstructures.
Quantifying the accuracy of snow water equivalent estimates using broadband radar signal phase

NASA Astrophysics Data System (ADS)

Deeb, E. J.; Marshall, H. P.; Lamie, N. J.; Arcone, S. A.

2014-12-01

Radar wave velocity in dry snow depends solely on density. Consequently, ground-based pulsed systems can be used to accurately measure snow depth and snow water equivalent (SWE) using signal travel-time, along with manual depth-probing for signal velocity calibration. Travel-time measurements require a large bandwidth pulse not possible in airborne/space-borne platforms. In addition, radar backscatter from snow cover is sensitive to grain size and to a lesser extent roughness of layers at current/proposed satellite-based frequencies (~ 8 - 18 GHz), complicating inversion for SWE. Therefore, accurate retrievals of SWE still require local calibration due to this sensitivity to microstructure and layering. Conversely, satellite radar interferometry, which senses the difference in signal phase between acquisitions, has shown a potential relationship with SWE at lower frequencies (~ 1 - 5 GHz) because the phase of the snow-refracted signal is sensitive to depth and dielectric properties of the snowpack, as opposed to its microstructure and stratigraphy. We have constructed a lab-based, experimental test bed to quantify the change in radar phase over a wide range of frequencies for varying depths of dry quartz sand, a material dielectrically similar to dry snow. We use a laboratory grade Vector Network Analyzer (0.01 - 25.6 GHz) and a pair of antennae mounted on a trolley over the test bed to measure amplitude and phase repeatedly/accurately at many frequencies. Using ground-based LiDAR instrumentation, we collect a coordinated high-resolution digital surface model (DSM) of the test bed and subsequent depth surfaces with which to compare the radar record of changes in phase. Our plans to transition this methodology to a field deployment during winter 2014-2015 using precision pan/tilt instrumentation will also be presented, as well as applications to airborne and space-borne platforms toward the estimation of SWE at high spatial resolution (on the order of meters) over large regions (> 100 square kilometers).
Communication: Modeling electrolyte mixtures with concentration dependent dielectric permittivity

NASA Astrophysics Data System (ADS)

Chen, Hsieh; Panagiotopoulos, Athanassios Z.

2018-01-01

We report a new implicit-solvent simulation model for electrolyte mixtures based on the concept of concentration dependent dielectric permittivity. A combining rule is found to predict the dielectric permittivity of electrolyte mixtures based on the experimentally measured dielectric permittivity for pure electrolytes as well as the mole fractions of the electrolytes in mixtures. Using grand canonical Monte Carlo simulations, we demonstrate that this approach allows us to accurately reproduce the mean ionic activity coefficients of NaCl in NaCl-CaCl2 mixtures at ionic strengths up to I = 3M. These results are important for thermodynamic studies of geologically relevant brines and physiological fluids.
Physical activity is associated with changes in knee cartilage microstructure.

PubMed

Halilaj, E; Hastie, T J; Gold, G E; Delp, S L

2018-06-01

The purpose of this study was to determine if there is an association between objectively measured physical activity and longitudinal changes in knee cartilage microstructure. We used accelerometry and T 2 -weighted magnetic resonance imaging (MRI) data from the Osteoarthritis Initiative, restricting the analysis to men aged 45-60 years, with a body mass index (BMI) of 25-27 kg/m 2 and no radiographic evidence of knee osteoarthritis. After computing 4-year changes in mean T 2 relaxation time for six femoral cartilage regions and mean daily times spent in the sedentary, light, moderate, and vigorous activity ranges, we performed canonical correlation analysis (CCA) to find a linear combination of times spent in different activity intensity ranges (Activity Index) that was maximally correlated with a linear combination of regional changes in cartilage microstructure (Cartilage Microstructure Index). We used leave-one-out pre-validation to test the robustness of the model on new data. Nineteen subjects satisfied the inclusion criteria. CCA identified an Activity Index and a Cartilage Microstructure Index that were significantly correlated (r = .82, P < .0001 on test data). Higher levels of sedentary time and vigorous activity were associated with greater medial-lateral differences in longitudinal T 2 changes, whereas light activity was associated with smaller differences. Physical activity is better associated with an index that contrasts microstructural changes in different cartilage regions than it is with univariate or cumulative changes, likely because this index separates the effect of activity, which is greater in the medial loadbearing region, from that of patient-specific natural aging. Copyright © 2018 Osteoarthritis Research Society International. Published by Elsevier Ltd. All rights reserved.
Intrinsic and extrinsic dielectric responses of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Rubinger, C. P. L.; Moreira, R. L.; Ribeiro, G. M.; Matinaga, F. M.; Autier Laurent, S.; Mercey, B.; Lobo, R. P. S. M.

2011-10-01

CaCu3Ti4O12 thin films were epitaxially grown on (001) LaAlO3 substrates by pulsed laser deposition under optimized growth conditions. The crystal structure and sample morphology were characterized by x-ray diffraction, AFM, TEM, ellipsometry, and Raman spectroscopy. The dielectric responses of the films were investigated in a large temperature range (5 to 375 K) by infrared reflectivity and impedance spectroscopies. The films exhibited a colossal dielectric response, with the dielectric permittivity reaching 104 at 100 Hz. The results obtained in a broad frequency range allowed us to investigate the behavior of intrinsic and extrinsic dielectric responses of this material. The room temperature centrosymmetrical cubic structure remains stable down to 5 K, though softening of the lower frequency infrared phonon modes indicates an incipient ferroelectric character. The radio frequency dielectric response reveals two relaxations of extrinsic origin, a primary higher frequency relaxation responsible for the colossal dielectric behavior and a secondary one of lower frequency. The activation energies of these processes are compatible with the presence of shallow defect levels created by oxygen vacancies.
Dielectric relaxation related to single-ionized oxygen vacancies in (Pb{sub 1-x}La{sub x})(Zr{sub 0.90}Ti{sub 0.10}){sub 1-x/4}O{sub 3} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelaiz-Barranco, A., E-mail: pelaiz@fisica.uh.cu; Guerra, J.D.S.

2010-09-15

The dielectric relaxation phenomenon has been studied in lanthanum modified lead zirconate titanate ceramics in the high temperature paraelectric phase. The high temperature dielectric response revealed an anomalous behavior, which is characterized by an increase of the real component of the dielectric permittivity with the increase of the temperature. At the same time, a similar behavior, with very high values, has been observed in the imaginary component of the dielectric permittivity, which can be associated with conduction effects related to the conductivity losses. The frequency and temperature behavior of the complex dielectric permittivity has been analyzed considering the semi-empirical complexmore » Cole-Cole equation. The activation energy value, obtained from the Arrhenius' dependence for the relaxation time, was found to decreases with the increase of the lanthanum concentration and has been associated with single-ionized oxygen vacancies. The short-range hopping of oxygen vacancies is discussed as the main cause of the dielectric relaxation.« less
Thermodynamics and instability of dielectric elastomer (Conference Presentation)

NASA Astrophysics Data System (ADS)

Liu, Liwu; Liu, Yanju; Leng, Jinsong; Mu, Tong

2017-04-01

Dielectric elastomer is a kind of typical soft active material. It can deform obviously when subjected to an external voltage. When a dielectric elastomer with randomly oriented dipoles is subject to an electric field, the dipoles will rotate to and align with the electric field. The polarization of the dielectric elastomer may be saturated when the voltage is high enough. When subjected to a mechanical force, the end-to-end distance of each polymer chain, which has a finite contour length, will approach the finite value, reaching a limiting stretch. On approaching the limiting stretch, the elastomer stiffens steeply. Here, we develop a thermodynamic constitutive model of dielectric elastomers undergoing polarization saturation and strain-stiffening, and then investigate the stability (electromechanical stability, snap-through stability) and voltage induced deformation of dielectric elastomers. Analytical solution has been obtained and it reveals the marked influence of the extension limit and polarization saturation limit on its instability. The developed thermodynamic constitutive model and simulation results would be helpful in future to the research of dielectric elastomer based high-performance transducers.
Active Tuning of Spontaneous Emission by Mie-Resonant Dielectric Metasurfaces.

PubMed

Bohn, Justus; Bucher, Tobias; Chong, Katie E; Komar, Andrei; Choi, Duk-Yong; Neshev, Dragomir N; Kivshar, Yuri S; Pertsch, Thomas; Staude, Isabelle

2018-06-13

Mie-resonant dielectric metasurfaces offer comprehensive opportunities for the manipulation of light fields with high efficiency. Additionally, various strategies for the dynamic tuning of the optical response of such metasurfaces were demonstrated, making them important candidates for reconfigurable optical devices. However, dynamic control of the light-emission properties of active Mie-resonant dielectric metasurfaces by an external control parameter has not been demonstrated so far. Here, we experimentally demonstrate the dynamic tuning of spontaneous emission from a Mie-resonant dielectric metasurface that is situated on a fluorescent substrate and embedded into a liquid crystal cell. By switching the liquid crystal from the nematic state to the isotropic state via control of the cell temperature, we induce a shift of the spectral position of the metasurface resonances. This results in a change of the local photonic density of states, which, in turn, governs the enhancement of spontaneous emission from the substrate. Specifically, we observe spectral tuning of both the electric and magnetic dipole resonances, resulting in a 2-fold increase of the emission intensity at λ ≈ 900 nm. Our results demonstrate a viable strategy to realize flat tunable light sources based on dielectric metasurfaces.
PREFACE: Dielectrics 2009: Measurement Analysis and Applications

NASA Astrophysics Data System (ADS)

Vaughan, Alun; Williams, Graham

2009-07-01

The conference Dielectrics 2009: Measurements, Analysis and Applications represents a significant milestone in the evolution of dielectrics research in the UK. It is reasonable to state that the academic study of dielectrics has led to many fundamental advances and that dielectric materials underpin the modern world in devices ranging from field effect transistors, which operate at extremely high fields, albeit low voltages, to the high voltage plants that provide the energy that powers our economy. The origins of the Dielectrics Group of the Institute of Physics (IOP), which organized this conference, can be traced directly back to the early 1960s, when Professor Mansel Davies was conducting research into the dielectric relaxation behaviour of polar liquids and solids at The Edward Davies Chemical Laboratories of the University College of Wales, Aberystwyth. He was already well-known internationally for his studies of molecular structure and bonding of small molecules, using infra-red-spectroscopy, and of the physical properties of hydrogen-bonded liquids and solids, using thermodynamic methods. Dielectric spectroscopy was a fairly new area for him and he realized that opportunities for scientists in the UK to gather together and discuss their research in this developing area of physical chemistry/chemical physics were very limited. He conceived the idea of forming a Dielectrics Discussion Group (DDG), which would act as a meeting point and provide a platform for dielectrics research in the UK and beyond and, as a result, a two-day Meeting was convened in the spring of 1968 at Gregynog Hall of the University of Wales, near Newtown, Montgomeryshire. It was organized by Mansel Davies, Alun Price and Graham Williams, all physical chemists from the UCW, Aberystwyth. Fifty scientists attended, being a mix of physical chemists, theoretical chemists, physicists, electrical engineers, polymer and materials scientists, all from the UK, except Dr Brendan Scaife of Trinity College, Dublin. The Meeting discussed dielectric relaxation behaviour arising from molecular motions of dipolar molecules in the liquid and elastomeric states (now known as soft condensed matter) with measurements spanning a frequency range from a few Hz, through power and radiofrequencies, UHF and VHF, the microwave range and into the far infra-red. As a result of its success, it was decided at the Meeting that a continuing Dielectrics Discussion Group would be established to meet not more frequently than once a year. It was appreciated at the time that the subject of 'Dielectrics' covered many sub-areas, broadly classified into those of polarization, relaxation, conduction and high-field phenomena. For the DDG, a solution was to run annual meetings on chosen themes in dielectrics research, where the theme would change from one meeting to the next. Topics addressed in the early years of the DDG included high field phenomena and impurity effects, heterogeneous systems and biomaterials, polarization and conduction and non-linear dielectrics and ferroelectrics. The number of participants at these early meetings grew from 50 to the low 100's, which reflected both the increased awareness of the Group and increased participation from researchers in Continental Europe. However, the majority of participants in this period were from the UK, which reflected the considerable activities in dielectrics research in University, Industry and Government laboratories in the UK. There followed a series of DDG Meetings until 1974, at which point, the DDG became a registered charity: The Dielectrics Society. Many of the earlier meetings were held in the attractive and convenient venues of Oxford and Cambridge colleges but, in the early 1990's, a new venue for the meetings was established at the University of Kent at Canterbury. In 2001, the next major change occurred when The Dielectrics Society was incorporated into the Institute of Physics, becoming their Dielectrics Group. From 1968 to 2001 the Annual Meetings focused on numerous topics, including relaxation and conduction processes in liquids, solids, liquid crystals, synthetic polymers and biopolymers, piezoelectric materials, electrets and ferroelectrets, interfacial phenomena, high field conduction and breakdown phenomena in solids, liquids and gases and, importantly, the remarkable developments in dielectric instrumentation during this period. These activities reflected the need, and willingness, to move dielectrics researches with the times. As examples of the variety and diversity of these meetings we may refer briefly to the 1981, 1989 and 1996 Meetings. The 1981 Oxford Meeting on High Field Phenomena in Dielectrics included strong themes on fundamental and practical effects of high E-fields on the dielectric and conduction behaviour of liquids and solids, electrical treeing and dielectric breakdown, non-linear dielectric effects, electrets, thin-film devices and electro-rheology. The late 1980's had seen large initiatives in the UK and globally in the general area of Molecular Electronics so, in timely fashion, this was the subject of the 1989 Meeting in Bangor. The 1996 Smart Dielectrics Meeting at Canterbury reported subsequent advances in designer materials having electro-responsive and electro-optical properties. The programme concerned electro- and photo-active materials, mainly organic, in the form of polar dielectrics, polyelectrolytes, organic semi- and photo-conductors, photo-refractive polymer films, organic ferroelectric films, liquid crystalline polymer films, piezo- and pyro-electric polymer films, electroluminescent polymers, electro-rheological fluids and non-linear optical polymer films as described by leading international scientists. The physico-chemical functions of the materials were demonstrated and interpreted in terms of fundamental molecular properties. An Archive, containing full details of all the Meetings of the DDG and the Dielectrics Society, has been placed on the Website of the IOP Dielectrics Group by Professor John Fothergill. The 2009 meeting of The Dielectrics Group of the IOP at Reading was therefore held to celebrate 40 years of coordinated dielectrics research activity in the UK and beyond, as presented at these DDG and Dielectrics Society Meetings. To reflect the range of topics addressed since the first DDG meeting in 1968, the organizing committee chose to break away from the tradition of a strongly- themed event and, rather, adopted a general, inclusive approach, albeit based upon four broad technical areas: Theme 1: Molecular and bulk relaxation processes Theme 2: Space charge and charge transport in insulators Theme 3: Functional materials Theme 4: Bio-dielectrics and complex systems. The result was a highly successful conference that attracted some 90 delegates from 11 countries, giving the event a truly international flavour, and which included both regular and new attendees. Consequently, the organizing committee would like to thank, our colleagues at the IOP, the invited speakers, our sponsors at National Grid, EDF Energy and Dow Wire and Cables and all the delegates for making the event such a success. Professor Alun Vaughan, Professor Graham Williams

Effect of Ca2+ Ions on Electrical Properties of Ba1-x Ca x Ti0.90Sn0.10O3-0.05Y2O3 Ceramics

NASA Astrophysics Data System (ADS)

Chen, Zhi-hui; Li, Zhi-wei; Ding, Jian-ning; Zhao, Tian-xiang; Qiu, Jian-hua; Zhu, Ke-qian; Xu, Jiu-jun; Zhang, Bing

2018-03-01

Ba1-x Ca x Ti0.90Sn0.10O3-0.05Y2O3 (BCTSY) lead-free piezoceramics with x = 0.02 to 0.10 have been fabricated by solid-state sintering method at 1420°C. The effects of Ca2+ ions on the microstructure and electrical properties of the samples were studied. X-ray diffraction analysis showed that all samples possessed pure perovskite structure with Ca2+ ions diffused into the matrix lattice. The rhombohedral phase and tetragonal phase coexisted in the composition range of 0.02 < x < 0.06. The microstructure of BCTSY ceramic became more homogeneous with addition of Ca2+ ions, and the average grain size of the samples decreased from 97 μm (x = 0.02) to 18 μm (x = 0.10). Addition of Ca2+ remarkably improved the piezoelectric properties, enhanced the dielectric frequency dispersion, and increased the Curie temperature of the ceramics. The piezoelectric properties of the ceramics were optimized at x = 0.04 with d 33 and K p values of 579 pC/N and 52.7%, respectively.
Effect of Ca2+ Ions on Electrical Properties of Ba1- x Ca x Ti0.90Sn0.10O3-0.05Y2O3 Ceramics

NASA Astrophysics Data System (ADS)

Chen, Zhi-hui; Li, Zhi-wei; Ding, Jian-ning; Zhao, Tian-xiang; Qiu, Jian-hua; Zhu, Ke-qian; Xu, Jiu-jun; Zhang, Bing

2018-07-01

Ba1- x Ca x Ti0.90Sn0.10O3-0.05Y2O3 (BCTSY) lead-free piezoceramics with x = 0.02 to 0.10 have been fabricated by solid-state sintering method at 1420°C. The effects of Ca2+ ions on the microstructure and electrical properties of the samples were studied. X-ray diffraction analysis showed that all samples possessed pure perovskite structure with Ca2+ ions diffused into the matrix lattice. The rhombohedral phase and tetragonal phase coexisted in the composition range of 0.02 < x < 0.06. The microstructure of BCTSY ceramic became more homogeneous with addition of Ca2+ ions, and the average grain size of the samples decreased from 97 μm ( x = 0.02) to 18 μm ( x = 0.10). Addition of Ca2+ remarkably improved the piezoelectric properties, enhanced the dielectric frequency dispersion, and increased the Curie temperature of the ceramics. The piezoelectric properties of the ceramics were optimized at x = 0.04 with d 33 and K p values of 579 pC/N and 52.7%, respectively.
Giant dielectric response in (Sr, Sb) codoped CaCu3Ti4O12 ceramics: A novel approach

NASA Astrophysics Data System (ADS)

Pradhan, M. K.; Rao, T. Lakshmana; Karna, Lipsarani; Dash, S.

2018-04-01

The CaCu3Ti4O12 (CCTO) remains as the best material for practical applications due to its high dielectric constant. To improve further the dielectric properties of CCTO to several orders in magnitude, a novel approach is adopted by codoping of Sr, Sb ions. The ceramic samples were fabricated by the conventional solid state route. The structure, morphology and detail dielectric properties were investigated systematically. All the samples crystalizes in a cubic symmetry with Im-3 space group. Sr substituted in Ca site can effectively suppress the grain growth, achieving a fine grained ceramic structure; however the grain size decreased slightly as Sb concentration increased further; whereas the dielectric permittivity of the ceramics increased drastically. The giant dielectric response was considered to be closely related with a reduction in the potential barrier height at grain boundaries (GBs) supported by the reduction in the activation energy for the conduction process.
Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films

NASA Astrophysics Data System (ADS)

Li, Weiwei; Gu, Junxing; He, Qian; Zhang, Kelvin H. L.; Wang, Chunchang; Jin, Kuijuan; Wang, Yongqiang; Acosta, Matias; Wang, Haiyan; Borisevich, Albina Y.; MacManus-Driscoll, Judith L.; Yang, Hao

2018-04-01

Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.
Dielectric Relaxation Behavior and AC Electrical Conductivity Study of 2-(1,2-Dihydro-7-Methyl-2-Oxoquinoline-5-yl) Malononitrile (DMOQMN)

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; El-Zaidia, E. F. M.; Darwish, A. A. A.; Salem, G. F.

2017-02-01

Dielectric relaxation and alternative current conductivity of a new organic compound 2-(1,2-dihydro-7-methyl-2-oxoquinoline-5-yl) malononitrile (DMOQMN) have been investigated. X-ray diffraction (XRD) at room temperature reveals that DMOQMN samples have a polycrystalline structure of the triclinic system. The analysis of the dielectric constant and dielectric loss index suggested the dominant polarization is performed and the Maxwell-Wagner-Sillar type polarization is dominating at low frequency and high temperature. These results have been confirmed by the XRD and dielectric modulus. The estimated relaxation time and the activation energy are 9 × 10-13 s and 0.43 eV, respectively. Our results indicated that the conduction mechanism of DMOQMN is controlled by the correlation barrier hopping (CBH) model.
Dielectric behavior of MgO:Li/sup +/ crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puma, M.; Lorincz, A.; Andrews, J.F.

1980-01-01

Measurements of the dielectric constant in crystals of MgO doped with Li/sup +/ ions have been carried out after quenching from anneals at 1300/sup 0/C in static air. Prior to heat treatment the crystals showed no discernible dielectric loss but afterwards the loss tangent exceeded 0.4. For 10 min anneals the dielectric relaxation is very close to a Debye process and the temperature dependence of the maximum of the loss peak corresponds to an activation energy of 0.72 eV. When plotted in the form of a Cole-Cole arc the data indicate that deviation from a Debye relaxation amounts to amore » distribution of relaxation time no greater than that which can be accounted for with a distribution of activation energies only 0.007 eV. For longer heating times overlapping relaxation processes appear. The lack of broadening of the loss peak and the magnitude of the relaxation time yield clues as to possible loss mechanisms.« less
Dielectric behavior of MgO:Li/sup +/ crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puma, M.; Lorincz, A.; Andrews, J.F.

1982-06-01

Measurements of the dielectric constant in crystals of MgO doped with Li/sup +/ ions have been carried out after quenching from anneals at 1300 /sup 0/C in static air. Prior to heat treatment, the crystals showed no discernible dielectric loss, but afterwards, the loss tangent exceeded 0.4. For 10-min anneals, the dielectric relaxation is very close to a Debye process, and the temperature dependence of the maximum of the loss peak corresponds to an activation energy of 0.724 eV. When plotted in the form of a Cole-Cole arc, the data indicate that deviation from a Debye relaxation amounts to amore » distribution of relaxation time no greater than that which can be accounted for with a distribution of activation energies of only 0.007 eV. For longer heating times, overlapping relaxation processes appear. The lack of broadening of the loss peak, and the magnitude of the relaxation time, yield clues as to possible loss mechanisms.« less
Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

DTIC Science & Technology

2012-01-01

original work is properly cited. Our measurements of surface enhanced Raman scattering (SERS) on Ga2O3 dielectric nanowires (NWs) core/silver composites...process has been widely discussed [15–21]. In this work, a highly effective SERS composite of dielectric Ga2O3 NWs core/silver was employed to investigate...self-assembled monolayer of active SERS molecules on the NWs may affect the SERS enhancement as well. 2. Experimental Details Random Ga2O3 NWs were
The study of dielectric relaxation in aqueous carbohydrates solutions using time domain reflectometry technique

NASA Astrophysics Data System (ADS)

Hudge, Pravin G.; Lokhande, Milind P.; Kumbharkhane, Ashok C.

2012-09-01

Complex permittivity spectra of aqueous solutions of monosaccharide ( d-glucose) and disaccharides ( d-sucrose) in the frequency range from 10 MHz to 30 GHz at various concentrations and temperatures have been determined using time domain reflectometry technique. The complex dielectric permittivity spectrum of d-glucose and d-sucrose in water shows Cole-Davidson type behaviour. Dielectric constant (ɛ0) and relaxation time (τ), Kirkwood correlation factor, activation enthalpy and entropy parameters have been determined.
Laser micromachining of optical devices

NASA Astrophysics Data System (ADS)

Kopitkovas, Giedrius; Lippert, Thomas; David, Christian; Sulcas, Rokas; Hobley, Jonathan; Wokaun, Alexander J.; Gobrecht, Jens

2004-10-01

The combination of a gray tone phase mask with a laser assisted wet etching process was applied to fabricate complex microstructures in UV transparent dielectric materials. This one-step method allows the generation of arrays of plano-convex and Fresnel micro-lenses using a conventional XeCl excimer laser and an absorbing liquid, which is in contact with the UV transparent material. An array of plano-convex micro-lenses was tested as beam homogenizer for a high power XeCl excimer and ps Nd:YAG laser. The roughness of the etched features varies from several μm to 10 nm, depending on the laser fluence and concentration of the dye in the organic liquid. The etching process can be divided into several etching mechanisms which vary with laser fluence.
The Electrochemical Society, Inc. Meeting Program (181st), Held in St. Louis, Missouri on May 17-22, 1992. Including: State-of-the-Art Program on Compound Semiconductors XVI, Fullerenes: Chemistry, Physics, and New Directions, Quantum Confinement, Micromachining and Microstructures, Electronics/Dielectric Science and Technology Joint Recent News Papers

DTIC Science & Technology

1991-04-28

evening. After the boat has crusied for Division Executive Committee a while, you will be served a buffet-style dinner of baked ham. chicken a Is...you would like to discuss. a The Pox Theatre and St. Louis Science Center are spectacular sites member of the Society Headquarters Staff will be...be no larger than 8 In 1929 by William Pox of 20th Century Pon fame, as crown jewel of 1" i 11’. ie empire, It be earned the name "The Fabulous Pox
Role of strained nano-regions in the formation of subgrains in CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Fang, Tsang-Tse; Wang, Yong-Huei; Kuo, Jui-Chao

2011-07-01

Single-phase CaCu3Ti4O12 (CCTO) was synthesized by solid-state reaction. Electron backscatter diffraction, scanning electron microscopy, and atomic force microscopy were adopted to characterize the grain orientation, microstructure, and surface morphology of the CCTO samples with or without thermal etching. Bump strained nano-regions induced by the local compositional disorder at a nano-scale have been discovered, being the origin of the formation of subgrains in CCTO. The proposed mechanism for the formation of subgrains involves the formation of etched pits and subboundaries pertaining to the strained nano-regions rather than dislocation displacement. The dielectric response inside the grains of CCTO relevant to the strained nano-regions is also discussed.
Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.
Analysis of capacitive force acting on a cantilever tip at solid/liquid interfaces

NASA Astrophysics Data System (ADS)

Umeda, Ken-ichi; Kobayashi, Kei; Oyabu, Noriaki; Hirata, Yoshiki; Matsushige, Kazumi; Yamada, Hirofumi

2013-04-01

Dielectric properties of biomolecules or biomembranes are directly related to their structures and biological activities. Capacitance force microscopy based on the cantilever deflection detection is a useful scanning probe technique that can map local dielectric constant. Here we report measurements and analysis of the capacitive force acting on a cantilever tip at solid/liquid interfaces induced by application of an alternating voltage to explore the feasibility of the measurements of local dielectric constant by the voltage modulation technique in aqueous solutions. The results presented here suggest that the local dielectric constant measurements by the conventional voltage modulation technique are basically possible even in polar liquid media. However, the cantilever deflection is not only induced by the electrostatic force, but also by the surface stress, which does not include the local dielectric information. Moreover, since the voltage applied between the tip and sample are divided by the electric double layer and the bulk polar liquid, the capacitive force acting on the apex of the tip are strongly attenuated. For these reasons, the lateral resolution in the local dielectric constant measurements is expected to be deteriorated in polar liquid media depending on the magnitude of dielectric response. Finally, we present the criteria for local dielectric constant measurements with a high lateral resolution in polar liquid media.
Role of silver nanotube on conductivity, dielectric permittivity and current voltage characteristics of polyvinyl alcohol-silver nanocomposite film

NASA Astrophysics Data System (ADS)

Mukherjee, P. S.; Das, A. K.; Dutta, B.; Meikap, A. K.

2017-12-01

A comprehensive study on the prevailing conduction mechanism, dielectric relaxation and current voltage behaviour of Polyvinyl alcohol (PVA) - Silver (Ag) nanotube composite film has been reported. Introduction of Ag nanotubes enhances the conductivity and dielectric permittivity of film. Film shows semiconducting behaviour with two activation energies. The dc conductivity of the nanocomposite film obeys the adiabatic small polaron model. The dielectric permittivity can be analysed by modified Cole-Cole model. A non-Debye type asymmetric behaviour has been observed in the sample. The back to back Schottky diode concept has been used to describe the current-voltage characteristic of the composite film.
Colossal Permittivity in Advanced Functional Heterogeneous Materials: The Relevance of the Local Measurements at Submicron Scale

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Nigro, Raffaella Lo; Raineri, Vito

Recently, giant dielectric permittivities (ɛ ' ˜ 104) have been found in several nonferroelectric materials such as CaCu3Ti4O12 (CCTO) (Subramanian et al., J. Solid State Chem. 151:323, 2000; Homes et al., Science 293:673, 2001), doped-NiO (Wu et al., Phys. Rev. Lett. 89:217601, 2002) systems (Li x Ti y Ni1 - x - y O, Li x Si y Ni1 - x - y O, Ki x Ti y Ni1 - x - y O), CuO, (Lin et al., Phys. Rev. B 72:014103, 2005; Sarkar et al., App. Phys. Lett. 92:142901, 2008) etc., and most important, the high ɛ ' values of these materials are almost independent over a wide range of temperature. This is one of the most intriguing features for their implementations in microelectronics devices, and as a consequence, these materials have been subjected to extensive research. Here, an introduction to such materials and to the methods for their dielectric characterization is given. So far, the crucial question is whether the large dielectric response is an intrinsic property of new class of crystals or an extrinsic property originated by a combination of the structural properties and other features such as defects and inhomogeneities. Preliminary, this peculiar dielectric behavior has been explained in powder ceramics by the internal barrier layer capacitor (IBLC) model, that is the presence of semiconducting domains surrounded by thin insulating regions within the crystal microstructure. It has been considered the most appropriate model and it has been generally accepted to explain the giant response of these materials. However, it could not be transferred to single crystals and thin films. In this scenario, scanning probe-based methods (like STM, KPFM, C-AFM, SIM etc) represent the most powerful instrument to understand the colossal permittivity-related physical phenomena, by investigations at nanoscale, clarifying the local effects responsible of the rising of macroscopic giant dielectric responses. Scanning probe microscopy investigations showed the relevance of inhomogeneity within single crystal, polycrystalline ceramics, and thin films. In particular, they are powerful tools to point out the presence of few nanometer wide internal barrier layers and of electrical domains, which are not recognisable with standard macroscopic electric characterization techniques.
Dielectric and Insulating Technology 2005 : Reviews & Forecasts

NASA Astrophysics Data System (ADS)

Okamoto, Tatsuki

This article reports the state-of-art of TC-DEI ( Technical Committee of Dielectrics and Electrical Insulation of IEEJ) activites. The activiteis are basically based on the activites of 8-10 investigation committees under TC-DEI. Recent activites were categorized into three functions in this article and remarkable activity or trend for each category is mentioned as was done in the article of 2003. Thoese are activities on asset management (AI application and insulation diagnosis), activities on new insulating and functional materials (Nano composite) and activities on new insulation technology for power tansmission (high Tc superconducting cable insulation).
Dielectric and Insulating Technology 2006 : Review & Forecast

NASA Astrophysics Data System (ADS)

Okamoto, Tatsuki

This article reports the state-of-art of TC-DEI ( Technical Committee of Dielectrics and Electrical Insulation of IEEJ) activites. The activiteis are basically based on the activites of 8-10 investigation committees under TC-DEI. Recent activites were categorized into three functions in this article and remarkable activity or trend for each category is mentioned as was seen in the articles of 2005. Those are activities on asset management (AI application and insulation diagnosis), activities on new insulating and functional materials (Nano composite) and activities on new insulation technology for power tansmission (high Tc superconducting cable insulation).
Thin film colossal dielectric constant oxide La2-xSrxNiO4: Synthesis, dielectric relaxation measurements, and electrode effects

NASA Astrophysics Data System (ADS)

Podpirka, Adrian; Ramanathan, Shriram

2011-01-01

We have successfully synthesized the colossal dielectric constant oxide La2-xSrxNiO4 in thin film form by reactive cosputtering from metallic targets and careful annealing protocols. Composition and phase purity was determined through energy dispersive spectra and x-ray diffraction, respectively. The dielectric constant exceeds values of over 20 000 up to 1 kHz and the activation energy for the frequency-independent conductivity plateau was extracted to be approximately 155 meV from 300 to 473 K, both in agreement with measurements conducted on bulk single crystals. However, unlike in single crystals, we observe early onset of relaxation in thin films indicating the crucial role of grain boundaries in influencing the dielectric response. ac conductivity at varying temperatures is analyzed within the framework of the universal dielectric law leading to an exponent of approximately 0.3, dependent on the electrode material. Impedance spectroscopy with electrodes of different work function (Pt, Pd, and Ag) was further carried out as a function of temperature and applied bias to provide mechanistic insights into the nature of the dielectric response.
Dielectric behavior and transport properties of ZnO nanorods

NASA Astrophysics Data System (ADS)

Soosen Samuel, M.; Koshy, Jiji; Chandran, Anoop; George, K. C.

2011-08-01

Highly optical, good crystalline and randomly aligned ZnO nanorods were synthesized by the hydrothermal method. The dielectric properties of ZnO nanorods were attributed to the interfacial polarization at low frequencies (below 10 kHz) and orientational polarization at higher frequencies. The observed ω( n-1) dependence of dielectric loss was discussed on the basis of the Universal model of dielectric response. Dielectric loss peak was composed of the Debye like loss peak at higher frequencies and interfacial loss peak at lower frequencies. Charge transport through the grain and grain boundary region was investigated by impedance spectroscopy. At higher temperatures the conductivity of the nanorod was mainly through the grain interior and the overall impedance was contributed by the grain boundary region. The activation energy of nanorod was calculated as 0.078 eV, which is slightly higher than the reported bulk value.

An experimental setup for study direct charge battery based on Sr-90

NASA Astrophysics Data System (ADS)

Özkeçeci, S.; Koç, R.

2017-02-01

In this paper we present construction and analysis of nuclear micro battery driven by Strontium 90 (Sr-90). Our design based on charge deposition on the plates of a capacitor and polarization of dielectric materials between the plates. In the construction we have used liquid Sr-90 with activity 100 mCi in cylindrical ampoule coiled up by thin film graphene as one plate and Manganase dioxide (MnO2) as other plate of the capacitor. A dielectric material (paper) is inserted between the plates. The high energetic beta particles from the Sr-90 penetrate graphene to produce ionization and then electrons are removed from graphene to dielectric material. Electrons inside the dielectric material cause polarization of dipoles. Consequently the radiation from the isotope produces an external current. We discuss effect of beta particles on dielectrics and electrodes beside advantage and disadvantage of a battery of this type.
Analog tree-organized multiplexer

NASA Technical Reports Server (NTRS)

Crabbe, J. S.; Smith, D. M.; Turner, W. R.

1971-01-01

An analog tree-organized multiplexer (ATOM) which is intended for use in the telemetry system of an interplanetary spacecraft is designed. The ATOM will be fabricated by a monolithic, dielectric isolation process, and will contain silicon junction field effect transistors (JFET) as the active elements. The effect of the radiation environment on the performance of the ATOM is analyzed. The result indicates that the expected radiation environment will cause only minor changes in the preradiation characteristics of ATOM. The JFET in the ATOM is designed to meet the electrical requirements when fabricated by either the double poly-dielectric isolation process or the raised dielectric isolation process. The effect of the heat treatment required for the dielectric isolation process on the diffusion profile of the JFET is described. The layout of the ATOM circuit for fabrication by either the double poly or raised dielectric isolation process is also given.
Adhesion promoters for large scale fabrication of dielectric elastomer stack transducers (DESTs) made of pre-fabricated dielectric films

NASA Astrophysics Data System (ADS)

Grotepaß, T.; Förster-Zügel, F.; Mößinger, H.; Schlaak, H. F.

2015-04-01

Multilayer dielectric elastomer stack transducers (DESTs) are a promising new transducer technology with many applications in different industry sectors, like medical devices, human-machine-interaction, etc. Stacked dielectric elastomer transducers show larger thickness contraction driven by lower voltages than transducers made from a single dielectric layer. Traditionally multilayered DESTs are produced by repeatedly cross-linking a liquid elastomeric pre-polymer into the required shape. Our recent research focusses on a novel fabrication method for large scale stack transducers with a surface area over 200 x 300 mm by processing pre-fabricated elastomeric thin films of less than 50 μm thicknesses. The thin films are provided as two- or three-layer composites, where the elastomer is sandwiched between one or two sacrificial liners. Separating the elastomeric film from the residual layers and assembling them into dielectric elastomer stack transducers poses many challenges concerning adhesion, since the dielectric film merely separates from the liner if the adhesive forces between them are overcome. Conversely, during the assembly of a dielectric elastomer stack transducer, adhesive forces have to be established between two elastomeric layers or between the dielectric and the electrode layer. The very low Young's modulus of at least one adhesion partner requires suitable means of increasing the adhesive forces between the different adhesive layers of a dielectric elastomer stack transducer to prevent a delamination of the transducer during its lifetime. This work evaluates different surface activation treatments - corona, low-pressure plasma and UV-light - and their applicability in the production of large scale DESTs made from pre-fabricated elastomeric films.
Dielectric Properties of BST/(Y 2O 3) x(ZrO 2) 1-x/BST Trilayer Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Santosh K.; Misra, D.

2011-01-31

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure ismore » studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.« less
Texture design for microwave dielectric (Ca0.7Nd0.3)0.87TiO3 ceramics through reactive-templated grain growth.

PubMed

Tani, Toshihiko; Takeuchi, Tsuguto

2015-06-01

Plate-like Ca 3 Ti 2 O 7 (CT) and Nd 2 Ti 2 O 7 (NT) particles were synthesized in molten salts and used as reactive templates for the preparation of highly textured (Ca 0.7 Nd 0.3 ) 0.87 TiO 3 bulk ceramics (CNT) with preferred pseudocubic 〈100〉 and 〈110〉 orientations, respectively. During flux growth CT and NT particles developed facets parallel to the pseudocubic {100} and {110} planes, respectively, in a perovskite unit cell, since those planes correspond to the interlayers of the layered perovskite-type crystal structures. Complementary reactants for the CNT stoichiometry were wet-mixed with the reactive templates and the slurries were tape-cast. Then stacked tapes were heat-treated for dense single-phase CNT ceramics with a distorted and A-site deficient regular perovskite-type structure. The CNT ceramics prepared with CT and NT reactive templates exhibited strong pseudocubic 100- and 110-family x-ray diffraction peaks, respectively, with other peaks drastically suppressed when non-perovskite sources were used as complementary reactants. The textured ceramics possess unique microstructures; as either parallel or obliquely stacked block structures with a pseudocubic {100} plane faceted. The pseudocubic {100}-and {110}-textured CNT ceramics exhibited ∼10 and ∼20% higher products of the dielectric quality factor and frequency, Q · f , respectively, than conventional ceramic sintered at the same temperature. When Q · f is compared based on the same grain size, the {100}-textured CNT exhibited 27% higher values than non-textured while relative permittivity and temperature coefficient of resonant frequency were of similar values. Simple geometrical relationships between electric field and penetrated pseudocubic { hk 0}-type grain boundaries must lead to the reduced scattering and dielectric loss.
Dielectric properties and microstructure of nano-MgO dispersed Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} thin films prepared by sputter deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, S.-F.; Chu, Jinn P.; Lin, C.C.

2005-07-01

In this study, thin films prepared from the targets of Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} (BST), BST/5 mol % MgO, BST/10 mol % MgO, and BST/20 mol % MgO composites, using radio frequency magnetron sputtering, have been reported. As-deposited films were found to be amorphous and began to crystallize after annealing at temperatures of 650 deg. C and above. The addition of MgO in the BST films resulted in the hindrance of crystallization and inhibition of grain growth. MgO was substituted into the BST lattices to a certain degree. High-resolution transmission electron microscopy results revealed some MgO dispersed in the BSTmore » matrix. The MgO dispersed in the dense BST matrix was found to be around 25 nm in size. The dielectric constant was estimated to be 90 for the pure BST film annealed at 700 deg. C, and observed to be slightly reduced with the MgO addition. The dielectric losses of the Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} (0.006) and BST/MgO films (0.002-0.004) were much less than those of the Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}(0.013) and Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} films (0.11-0.13). The leakage current was smaller for the BST/10 mol % MgO film compared to the pure BST film and this low leakage current may be attributed to the substitution of Mg in the B sites of BST lattices which might have behaved as an electron acceptors.« less
Phase Composition, Crystallite Size and Physical Properties of B2O3-added Forsterite Nano-ceramics

NASA Astrophysics Data System (ADS)

Pratapa, S.; Chairunnisa, A.; Nurbaiti, U.; Handoko, W. D.

2018-05-01

This study was aimed to know the effect of B2O3 addition on the phase composition, crystallite size and dielectric properties of forsterite (Mg2SiO4) nano-ceramics. It utilized a purified silica sand from Tanah Laut, South Kalimantan as the source of (amorphous) silica and a magnesium oxide (MgO) powder. They were thoroughly mixed and milled prior to calcination. The addition of 1, 2, 3, and 4 wt% B2O3 to the calcined powder was done before uniaxial pressing and then sintering at 950 °C for 4 h. The phase composition and forsterite crystallite size, the microstructure and the dielectric constant of the sintered samples were characterized using X-ray diffractometer (XRD), Scanning Electron Microscope (SEM) and Vector Network Analyzer (VNA), respectively. Results showed that all samples contained forsterite, periclase (MgO) and proto enstatite (MgSiO3) with different weight fractions and forsterite crystallite size. In general, the weight fraction and crystallite size of forsterite increased with increasing B2O3 addition. The weight fraction and crystallite size of forsterite in the 4%-added sample reached 99% wt and 164 nm. Furthermore, the SEM images showed that the average grain size became slightly larger and the ceramics also became slightly denser as more B2O3 was added. The results are in accordance with density measurements using the Archimedes method which showed that the 4% ceramic exhibited 1.845 g/cm3 apparent density, while the 1% ceramic 1.681 g/cm3. We also found that the higher the density, the higher the average dielectric constant, i.e. it was 4.6 for the 1%-added sample and 6.4 for the 4%-added sample.
Influence of Al3+ substitution on the electrical resistivity and dielectric behavior of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites synthesized by solid state reaction technique

NASA Astrophysics Data System (ADS)

Rahman, K. R.; Chowdhury, F.-U.-Z.; Khan, M. N. I.

2017-12-01

In this paper, the effect of Al3+ substitution on the electrical and dielectric properties of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites with x = 0.0, 0.05. 0.10, 0.15 and 0.20, synthesized by solid state reaction has been reported. Using two probe method, the DC resistivity has been investigated in the temperature range from 30 °C to 300 °C. Activation energy was calculated from the Arrhenius plot. The electrical conduction is explained on the basis of the hopping mechanism. The frequency dependent dielectric properties of these spinel ferrites have been studied at room temperature by measuring AC resistivity, conductivity (σac), dielectric constant and dielectric loss tangent (tan δ) in the frequency range between 1 kHz and 120 MHz. The study of dielectric properties showed that the dielectric constant and dielectric loss increased with increasing non-magnetic Al ions. The dependence of dielectric constant with frequency has been explained by Maxwell-Wagner interfacial polarization. Cole-Cole plots show semicircular arc(s) for the samples, and equivalent RC circuits have been proposed to clarify the phenomena involved therein. The analysis of complex impedance spectroscopy has been used to distinguish between the grain and grain boundary contribution to the total resistance.
Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

NASA Astrophysics Data System (ADS)

Farid, Hafiz Muhammad Tahir; Ahmad, Ishtiaq; Ali, Irshad; Ramay, Shahid M.; Mahmood, Asif; Murtaza, G.

2017-07-01

Spinel ferrites with nominal composition MgPryFe2-yO4 (y = 0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1 MHz-3 GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole-Cole plots were used to separate the grain and grain boundary's effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary's resistance as compared to the grain's resistance. As both AC conductivity and Cole-Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe2O4 exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.
Development of Ni-Ferrite-Based PVDF Nanomultiferroics

NASA Astrophysics Data System (ADS)

Behera, C.; Choudhary, R. N. P.; Das, Piyush R.

2017-10-01

Thin-film polyvinylidene fluoride (PVDF)-spinel ferrite nanocomposites with 0-3 connectivity and varying composition, i.e., (1 - x)PVDF- xNiFe2O4 ( x = 0.05, 0.1, 0.15), have been fabricated by a solution-casting route. The basic crystal data and microstructure of the composite samples were obtained by x-ray powder diffraction analysis and scanning electron microscopy, respectively. Preliminary structural analysis showed the presence of polymeric electroactive β-phase of PVDF (matrix) and spinel ferrite (filler) phase in the composites. The composites were found to be flexible with high relative dielectric constant ( ɛ r) and low loss tangent (tan δ). Detailed studies of their electrical characteristics using complex impedance spectroscopy showed the contributions of bulk (grains) and grain boundaries in the resistive and capacitive properties of the composites. Study of the frequency-dependent electrical conductivity at different temperatures showed that Jonscher's power law could be used to interpret the transport properties of the composites. Important experimental data and results obtained from magnetic as well ferroelectric hysteresis loops and the first-order magnetoelectric coefficient suggest the suitability of some of these composites for fabrication of multifunctional devices. The low electrical conductivity, high dielectric constant, and low loss tangent suggest that such composites could be used in capacitor devices.
Optomagnetic composite medium with conducting nanoelements

NASA Astrophysics Data System (ADS)

Panina, L. V.; Grigorenko, A. N.; Makhnovskiy, D. P.

2002-10-01

A type of metal-dielectric composites has been proposed that is characterized by a resonancelike behavior of the effective permeability μeff in the infrared and visible spectral ranges. This material can be referred to as an optomagnetic medium. It consists of conducting inclusions in the shape of nonclosed contours or pairs of parallel sticks with length of 50-100 nm embedded in a dielectric matrix. The analytical formalism developed is based on solving the scattering problem for considered inclusions with impedance boundary condition, which yields the current and charge distributions within the inclusions. The magnetic properties originated by induced currents are enhanced by localized plasmon modes, which make an inclusion resonate at a much lower frequency than that of the half-wavelength requirement at microwaves. It implies that microstructure can be made on a scale much less than the wavelength and the effective permeability is a valid concept. The presence of the effective magnetic permeability and its resonant properties lead to unusual optical effects and open interesting applications. In particular, the condition for Brewster's angle becomes different resulting in reflectionless normal incidence from air (vacuum) if the effective permeability and permittivity are the same. The resonant behavior of the effective permeability of the proposed optomagnetic medium could be used for creation of optical polarizes, filters, phase shifters, and selective lenses.
Study of xCo0.8Ni0.2Fe2O4+(1-x) Pb0.99625 La0.0025Zr0.55Ti0.45O3 magnetoelectric composites

NASA Astrophysics Data System (ADS)

Dipti; Singh, Sangeeta; Juneja, J. K.; Raina, K. K.; Kotnala, R. K.; Prakash, Chandra

2016-06-01

We are reporting here, the studies of the structural, dielectric, ferroelectric and magnetic properties of magnetoelectric composites of La modified lead zirconate titanate (PLZT) and Ni modified cobalt ferrite (CNFO) with compositional formula xCo0.8Ni0.2Fe2O4+(1-x) Pb0.99625La0.0025Zr0.55Ti0.45O3 (x=0.00, 0.05, 0.10, 0.15 and 1.00 by weight) prepared by the solid state reaction method. Coexistence of both the phases in composites was confirmed by X-Ray diffraction technique. The microstructure and average grain size were determined from Scanning Electron Micrograph (SEM) in backscattered mode. Both the phases could be observed clearly. The variations of dielectric properties with frequency and temperature were also studied. P-E and M-H hysteresis measurements were carried. Magnetoelectric coupling (ME) coefficient for samples with x=0.05 and 0.10 were measured as a function of DC magnetic field. Maximum value of ME coefficient (1.2 mV/cm Oe) and piezoelectric coefficient (96 pC/N) for x=0.05 were observed.
Improved ferroelectric, piezoelectric and electrostrictive properties of dense BaTiO{sub 3} ceramic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baraskar, Bharat G.; Kakade, S. G.; Kambale, R. C., E-mail: rckambale@gmail.com

2016-05-23

The ferroelectric, piezoelectric and electrostrictive properties of BaTiO{sub 3} (BT) dense ceramic synthesized by solid-state reaction were investigated. X-ray diffraction study confirmed tetragonal crystal structure having c/a ~1.0144. The dense microstructure was evidenced from morphological studies with an average grain size ~7.8 µm. Temperature dependent dielectric measurement showed the maximum values of dielectric constant, ε{sub r} = 5617 at Curie temperature, T{sub c} = 125 °C. The saturation and remnant polarization, P{sub sat.} = 24.13 µC/cm{sup 2} and P{sub r} =10.42 µC/cm{sup 2} achieved respectively for the first time with lower coercive field of E{sub c}=2.047 kV/cm. The polarization currentmore » density-electric field measurement exhibits the peaking characteristics, confirms the saturation state of polarization for BT. The strain-electric field measurements revealed the “sprout” shape nature instead of typical “butterfly loop”. This shows the excellent converse piezoelectric response with remnant strain ~ 0.212% and converse piezoelectric constant d*{sub 33} ~376.35 pm/V. The intrinsic electrostrictive coefficient was deduced from the variation of strain with polarization with electrostrictive coefficient Q{sub 33}~ 0.03493m{sup 4}/C{sup 2}.« less
Investigation of structural, magnetic and dielectric properties of Cr3+ substituted Cu0.75Co0.25Fe2-xO4 ferrite nanoparticles

NASA Astrophysics Data System (ADS)

Reddi, M. Sushma; Ramesh, M.; Sreenivasu, T.; Rao, G. S. N.; Samatha, K.

2018-05-01

Chromium doped Copper-Cobalt ferrite Nanoparticles were obtained by sol-gel auto-combustion method using citric acid as a fuel. The metal nitrates to citric acid ratio was taken as 1:1. The prepared powder of Cr3+ doped copper-cobalt ferrite nanoparticles is annealed at 600°C for 5 hrs and the same powder was used for characterization and investigations of structural properties. The phase composition, micro-structural, micro morphological and elemental analysis studies were carried out by X-ray diffraction (XRD), scanning electron microscope (SEM) technique and energy dispersive spectroscopy (EDS). The FTIR spectra of these samples are recorded to ensure the presence of the metallic compounds. The average crystallite size obtained by Scherrer's formula is of the order of 19.28 nm to 32.92 nm. The dielectric properties are investigated as a function of frequency at room temperature using LCR-Q meter. The saturation magnetization (Ms) of the Cr3+ substituted Cu-Co ferrite sintered at 1100°C lies in the range of 5.4136-28.9943 emu/g, the coercivity (Hc) dropped desperately from about 2091.3-778.53Oe as Cr3+ composition increases from 0.0 to 0.25.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Wildfire, Christina; Sabolsky, Edward M.; Spencer, Michael J.

The rapid synthesis of yttrium aluminum garnet (Y 3Al 15O 12, YAG) powder was investigated through the use of microwave irradiation of the oxide precursor system. For this investigation, an external hybrid heating source was not used. Instead, the rapid heating of the precursor materials (yttria and alumina powders, which are typically transparent to 2.45 GHz microwaves) was initiated by mixing an intrinsic absorbing material (carbon) into the original oxide precursors. The effect of the carbon characteristics, such as carbon source, concentration, particle size, and agglomerate microstructure were evaluated on the efficiency of coupling and resultant oxide reaction. The microwavemore » power was varied to optimize the YAG conversion and eliminate intermediate phase formation. Interactions between the conductive carbon particles and the dielectric oxides within the microwave exposure produced local arching and micro-plasma formation within the powder bed, resulting in the rapid formation of the refractory YAG composition. This optimal conduction led to temperatures of 1000°C that could be achieved in less than 5 min resulting in the formation of > 90 vol% YAG. The understanding of a conductor/dielectric particulate system here, provided insight into possible application of similar systems where microwave irradiation could be used for enhanced solid-state formation, local melting events, and gas phase reactions with a composite powder media.« less
Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.
Spring roll dielectric elastomer actuators for a portable force feedback glove

NASA Astrophysics Data System (ADS)

Zhang, Rui; Lochmatter, Patrick; Kunz, Andreas; Kovacs, Gabor

2006-03-01

Miniature spring roll dielectric elastomer actuators for a novel kinematic-free force feedback concept were manufactured and experimentally characterized. The actuators exhibited a maximum blocking force of 7.2 N and a displacement of 5 mm. The theoretical considerations based on the material's incompressibility were discussed in order to estimate the actuator behavior under blocked-strain activation and free-strain activation. One prototype was built for the demonstration of the proposed force feedback concept.
Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.
Colossal dielectric behavior of semiconducting Sr2TiMnO6 ceramics

NASA Astrophysics Data System (ADS)

Meher, K. R. S. Preethi; Varma, K. B. R.

2009-02-01

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as ˜105 in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.
Dielectric relaxation, resonance and scaling behaviors in Sr3Co2Fe24O41 hexaferrite

PubMed Central

Tang, Rujun; Jiang, Chen; Qian, Wenhu; Jian, Jie; Zhang, Xin; Wang, Haiyan; Yang, Hao

2015-01-01

The dielectric properties of Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) have been investigated as a function of temperature from 153 to 503 K between 1 and 2 GHz. The dielectric responses of SCFO are found to be frequency dependent and thermally activated. The relaxation-type dielectric behavior is observed to be dominating in the low frequency region and resonance-type dielectric behavior is found to be dominating above 108 Hz. This frequency dependence of dielectric behavior is explained by the damped harmonic oscillator model with temperature dependent coefficients. The imaginary part of impedance (Z″) and modulus (M″) spectra show that there is a distribution of relaxation times. The scaling behaviors of Z″ and M″ spectra further suggest that the distribution of relaxation times is temperature independent at low frequencies. The dielectric loss spectra at different temperatures have not shown a scaling behavior above 108 Hz. A comparison between the Z″ and the M″ spectra indicates that the short-range charges motion dominates at low temperatures and the long-range charges motion dominates at high temperatures. The above results indicate that the dielectric dispersion mechanism in SCFO is temperature independent at low frequencies and temperature dependent at high frequencies due to the domination of resonance behavior. PMID:26314913

Improved Dielectric Properties via Mechano-Chemical Activation in Ba0.80Pb0.20TiO3 Ceramics

NASA Astrophysics Data System (ADS)

Kumar, Parveen; Rani, Renu; Singh, Sangeeta; Juneja, J. K.; Prakash, Chandra; Raina, K. K.

2011-12-01

The present report is about the preparation and dielectric properties of commonly used Ba0.80Pb0.20TiO3 (BPT) ferroelectric ceramic via Mechano-Chemical Activation (MCA). Results were compared by the BPT sample prepared by conventional solid state method. The BPT sample prepared via MCA technique was found to have decreased tetragonality, dielectric constant value (ɛRT = 450 and ɛmax = 6170) approximately double the value for sample prepared by conventional method (ɛRT = 260 and ɛmax = 3275). Also, the sample prepared by MCA was found to be less frequency dependent. Thus, the BPT sample prepared via MCA is more suitable for capacitor applications requiring lesser frequency dependency than the conventionally prepared BPT sample.
Nanostructure and strain effects in active thin films for novel electronic device applications

NASA Astrophysics Data System (ADS)

Yuan, Zheng

2007-12-01

There are many potential applications of ferroelectric thin films that take advantage of their unique dielectric and piezoelectric properties, such as tunable microwave devices and thin-film active sensors for structural health monitoring (SHM). However, many technical issues still restrict practical applications of ferroelectric thin films, including high insertion loss, limited figure of merit, soft mode effect, large temperature coefficients, and others. The main theme of this thesis is the advanced technique developments, and the new ferroelectric thin films syntheses and investigations for novel device applications. A novel method of additional doping has been adopted to (Ba,Sr)TiO 3 (BSTO) thin films on MgO. By introducing 2% Mn into the stoichiometric BSTO, Mn:BSTO thin films have shown a greatly enhanced dielectric tunability and a reduced insertion loss at high frequencies (10-30 GHz). A new record of a large tunability of 80% with a high dielectric constant of 3800 and an extra low dielectric loss of 0.001 at 1 MHz at room-temperature was achieved. Meanwhile, the new highly epitaxial ferroelectric (Pb,Sr)TiO3 (PSTO) thin films have been synthesized on (001) MgO substrates. PSTO films demonstrated excellent high frequency dielectric properties with high dielectric constants above 1420 and large dielectric tunabilities above 34% at room-temperature up to 20 GHz. In addition, a smaller temperature coefficient from 80 K to 300 K was observed in PSTO films compared to BSTO films. These results indicate that the Mn:BSTO and PSTO films are both good candidates for developing room-temperature tunable microwave devices. Furthermore, crystalline ferroelectric BaTiO3 (BTO) thin films have been deposited directly on metal substrate Ni through a unique in-situ substrate pre-oxidation treatment. The highly oriented nanopillar structural BTO films were grown on the buffered layers created by the pre-oxidation treatment. No interdiffusion or reaction was observed at the interface. As-grown BTO films demonstrated good ferroelectric properties and an extremely large piezoelectric response of 130 (x 10-12 C/N). These excellent preliminary results enable the long-term perspective on the unobtrusive ferroelectric thin-film active sensors for SHM applications.
Infrared dielectric functions and optical phonons of wurtzite Y x Al1-x N (0 ⩽ x ⩽ 0.22)

NASA Astrophysics Data System (ADS)

Ben Sedrine, N.; Zukauskaite, A.; Birch, J.; Jensen, J.; Hultman, L.; Schöche, S.; Schubert, M.; Darakchieva, V.

2015-10-01

YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) Y x Al1-x N epitaxial films with 0 ⩽ x ⩽ 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E 1(TO) and LO, and the Raman active E 2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E 1(TO), E 2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, {{\\varepsilon}∞} , the static dielectric constant, {{\\varepsilon}0} , and the Born effective charge Z B are established and discussed.
Studying dielectric mechanism and magnetization of double perovskite Gd2NiMnO6 ceramic

NASA Astrophysics Data System (ADS)

Mohapatra, S. R.; Sahu, B.; Kaushik, S. D.; Singh, A. K.

2016-05-01

In the present work, the structure, dielectric and magnetic properties of Gd2NiMnO6 double perovskite have been studied. X-Ray diffraction study reveals the phase pure formation of the material that crystallizes into monoclinic phase (space group 'P21/n'). Surface morphology depicts heterogeneous grain distribution with average grain size of ~1 µm. Temperature dependent (50 - 330 K) dielectric measurements at different frequencies (0.5 - 50 kHz) relate to Maxwell-Wagner interfacial polarization model. Giant dielectric constant at 1 kHz for 300 K (ɛ' ~1900) is noticed as compared to that of 50 K (ɛ' ~10) coupled with a peak shift in tan loss towards higher temperature with frequency. The activation energy (0.24 eV) obtained using Arrhenius relation for thermally activated relaxor behavior of the material signifies an electron hopping mechanism between Ni2+ and Mn4+ cations. Lastly, M-H study shows `S' shape hysteresis loop at 50 K with remnant magnetization (Mr) of 0.72 µB/f.u. along with a linear plot for 300 K which reveals paramagnetic nature of the material.
Electrical Properties and Dipole Relaxation Behavior of Zinc-Substituted Cobalt Ferrite

NASA Astrophysics Data System (ADS)

Supriya, Sweety; Kumar, Sunil; Kar, Manoranjan

2017-12-01

Co1- x Zn x Fe2O4 ceramics with x = 0.00, 0.05, 0.10, 0.15 and 0.20 were synthesized by a modified citric acid sol-gel method. The crystalline phase of the samples was characterized by the powder x-ray diffraction technique (XRD) and the Rietveld analysis of the XRD patterns. The morphology and particle size were studied using field emission scanning electron microscopy. Fourier transform infrared spectroscopy studies were consistent with the XRD results. The impedance measurements were carried out from 100 Hz to 10 MHz at different temperatures from 40°C to 300°C. The frequency dispersion of dielectric was analyzed with a modified Debye equation. The activation energy derived from the dielectric constant and the impedance follows the Arrhenius law and are comparable with each other. The dielectric relaxation and impedance relaxation are correlated in terms of activation energy, show a good temperature stability of the dielectrics and are useful for their applications in microelectronic devices such as filters, capacitors, resonators, etc.
Microwave dielectric measurements of erythrocyte suspensions.

PubMed Central

Bao, J Z; Davis, C C; Swicord, M L

1994-01-01

Complex dielectric constants of human erythrocyte suspensions over a frequency range from 45 MHz to 26.5 GHz and a temperature range from 5 to 40 degrees C have been determined with the open-ended coaxial probe technique using an automated vector network analyzer (HP 8510). The spectra show two separate major dispersions (beta and gamma) and a much smaller dispersion between them. The two major dispersions are analyzed with a dispersion equation containing two Cole-Cole functions by means of a complex nonlinear least squares technique. The parameters of the equation at different temperatures have been determined. The low frequency behavior of the spectra suggests that the dielectric constant of the cell membrane increases when the temperature is above 35 degrees C. The real part of the dielectric constant at approximately 3.4 GHz remains almost constant when the temperature changes. The dispersion shifts with temperature in the manner of a thermally activated process, and the thermal activation enthalpies for the beta- and gamma-dispersions are 9.87 +/- 0.42 kcal/mol and 4.80 +/- 0.06 kcal/mol, respectively. PMID:8075351
Magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ≤ x ≤ 0.15)

NASA Astrophysics Data System (ADS)

Zuo, X. Z.; Yang, J.; Yuan, B.; Song, D. P.; Tang, X. W.; Zhang, K. J.; Zhu, X. B.; Song, W. H.; Dai, J. M.; Sun, Y. P.

2015-03-01

We investigate the structural, magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi6-x/3Fe2Ti3-2x(WCo)xO18 (0 ≤ x ≤ 0.15). The room-temperature weak ferromagnetism is observed for the W/Co co-doped samples. The results of the dielectric constant ɛr, complex impedance Z ″ , the dc conductivity σdc, and hopping frequency fH manifest that the dielectric relaxation of the x = 0 sample and the doped samples in the dielectric anomaly region (450-750 K) can be ascribed to the trap-controlled ac conduction around the doubly ionized oxygen vacancies and the localized hopping process of oxygen vacancies, respectively. The scaling behaviors reveal that the dynamic process of both electrons in the x = 0 sample and oxygen vacancies in the doped samples is temperature independent. The ferroelectric Curie-temperature Tc decreases slightly from 973 K to 947 K with increasing the doping level of W/Co. In addition, the dielectric loss exhibits a dielectric relaxation above 800 K with the rather large activation energies (1.95 eV ≤ Ea ≤ 2.72 eV).
Community Project for Accelerator Science and Simulation (ComPASS) Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cary, John R.; Cowan, Benjamin M.; Veitzer, S. A.

2016-03-04

Tech-X participated across the full range of ComPASS activities, with efforts in the Energy Frontier primarily through modeling of laser plasma accelerators and dielectric laser acceleration, in the Intensity Frontier primarily through electron cloud modeling, and in Uncertainty Quantification being applied to dielectric laser acceleration. In the following we present the progress and status of our activities for the entire period of the ComPASS project for the different areas of Energy Frontier, Intensity Frontier and Uncertainty Quantification.
A comparative study of conventionally sintered and microwave sintered nickel zinc ferrite

NASA Astrophysics Data System (ADS)

Rani, Rekha; Juneja, J. K.; Raina, K. K.; Kotnala, R. K.; Prakash, Chandra

2014-04-01

For the present work, nickel zinc ferrite having compositional formula Ni0.8Zn0.2Fe2O4 was synthesized by conventional solid state method and sintered in conventional and microwave furnaces. Pellets were sintered with very short soaking time of 10 min at 1150 °C in microwave furnace whereas 4 hrs of soaking time was selected for conventional sintering at 1200 °C. Phase formation was confirmed by X-ray diffraction analysis technique. Scanning electron micrographs were taken for microstructural study. Dielectric properties were studied as a function of temperature. To study magnetic behavior, M-H hysteresis loops were recorded for both samples. It is observed that microwave sintered sample could obtain comparable properties to the conventionally sintered one in lesser soaking time at lower sintering temperature.
Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.
Demonstration of motion control of ZrO2 microparticles in uniform/non-uniform electric field

NASA Astrophysics Data System (ADS)

Onishi, Genki; Trung, Ngo Nguyen Chi; Matsutani, Naoto; Nakayama, Tadachika; Suzuki, Tsuneo; Suematsu, Hisayuki; Niihara, Koichi

2018-02-01

This study aims to elucidate the mechanism that drives dielectric microparticles under an electric field. The driving of microstructures is affected by various electrical phenomena occurring at the same time such as surface potential, polarization, and electrostatic force. It makes the clarification of the driving mechanism challenging. A simple experimental system was used to observe the behavior of spherical ZrO2 microparticles in a nonaqueous solution under an electric field. The results suggest that the mechanism that drives the ZrO2 microparticles under an electric field involved the combination of an electric image force, a gradient force, and the contact charging phenomenon. A method is proposed to control the motion of micro- and nanostructures in further study and applications.
Structural white matter asymmetries in relation to functional asymmetries during speech perception and production.

PubMed

Ocklenburg, Sebastian; Hugdahl, Kenneth; Westerhausen, René

2013-12-01

Functional hemispheric asymmetries of speech production and perception are a key feature of the human language system, but their neurophysiological basis is still poorly understood. Using a combined fMRI and tract-based spatial statistics approach, we investigated the relation of microstructural asymmetries in language-relevant white matter pathways and functional activation asymmetries during silent verb generation and passive listening to spoken words. Tract-based spatial statistics revealed several leftward asymmetric clusters in the arcuate fasciculus and uncinate fasciculus that were differentially related to activation asymmetries in the two functional tasks. Frontal and temporal activation asymmetries during silent verb generation were positively related to the strength of specific microstructural white matter asymmetries in the arcuate fasciculus. In contrast, microstructural uncinate fasciculus asymmetries were related to temporal activation asymmetries during passive listening. These findings suggest that white matter asymmetries may indeed be one of the factors underlying functional hemispheric asymmetries. Moreover, they also show that specific localized white matter asymmetries might be of greater relevance for functional activation asymmetries than microstructural features of whole pathways. © 2013.
High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

PubMed

Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

2016-04-01

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.
Elastomer actuators: systematic improvement in properties by use of composite materials

NASA Astrophysics Data System (ADS)

Molberg, Martin; Leterrier, Yves; Plummer, Christopher J. G.; Löwe, Christiane; Opris, Dorina M.; Clemens, Frank; Månson, Jan-Anders E.

2010-04-01

Dielectric elastomer actuators (DEAs) have attracted increasing attention over the last few years owing to their outstanding properties, e.g. their large actuation strains, high energy density, and pliability, which have opened up a wide spectrum of potential applications in fields ranging from microengineering to medical prosthetics. There is consequently a huge demand for new elastomer materials with improved properties to enhance the performance of DEAs and to overcome the limitations associated with currently available materials, such as the need for high activation voltages and the poor long-term stability. The electrostatic pressure that activates dielectric elastomers can be increased by higher permittivity of the elastomer and thus may lead to lower activation voltages. This has led us to consider composite elastomeric dielectrics based on thermoplastic elastomers or PDMS, and conductive polyaniline or ceramic (soft doped PZT) powder fillers. The potential of such materials and strategies to counter the adverse effects of increased conductivity and elastic modulus are discussed.
Conduction mechanism and dielectric relaxation in high dielectric KxTiyNi1-x-yO

NASA Astrophysics Data System (ADS)

Jana, Pradip Kumar; Sarkar, Sudipta; Karmakar, Shilpi; Chaudhuri, B. K.

2007-10-01

Complex impedance spectroscopic study has been made to elucidate the conductivity mechanism and dielectric relaxations in a low loss giant dielectric (ɛ'˜104) KxTiyNi1-x-yO (KTNO) system with x =0.05-0.30 and y =0.02 over a wide temperature range (200-400K). Below ambient temperature (300K), dc conductivity follows variable range hopping mechanism. The estimated activation energy for dielectric relaxation is found to be higher than the corresponding polaron hopping energy, which is attributed to the combined effect of K-doped grains and highly disordered grain boundary (GB) contributions in KTNO. Observed sharp fall of ɛ' below ˜270K is ascribed to the freezing of charge carriers. Comparatively lower value of relaxation time distribution parameter β of KTNO than that of the CaCu3Ti4O12 (CCTO) system reveals more disorder in KTNO. It is also found that KTNO is structurally more stable compared to the CCTO system, both having giant ɛ' value.
Alternating current transport and dielectric relaxation of nanocrystalline graphene oxide

NASA Astrophysics Data System (ADS)

Zedan, I. T.; El-Menyawy, E. M.

2018-07-01

Graphene oxide (GO) has been synthesized from natural graphite using modified Hummer's method and is subjected to sonication for 1 h. X-ray diffraction (XRD) showed that the prepared GO has nanocrystalline structure with particle size of about 5 nm and high-resolution transmission electron microscope showed that it had a layered structure. The nanocrystalline GO powder was pressed as a disk and the alternating current (AC) electrical conductivity, σAC, and dielectric properties have been investigated in the frequency range 50Hz-5 MHz and temperature range 298-523K using parallel plate spectroscopic technique. Analysis of σ AC as a function of frequency shows that the relation follows Jonscher's universal law with frequency exponent decreases with increasing temperature in which the correlated barrier hopping model is applicable to describe the behavior. The dielectric constant and dielectric loss are studied as functions of frequency and temperature. The dielectric modulus formalism is used for describing the relaxation process in which the relaxation time and its activation energy were evaluated.
Alternating current characterization of nano-Pt(II) octaethylporphyrin (PtOEP) thin film as a new organic semiconductor

NASA Astrophysics Data System (ADS)

M, Dongol; M, M. El-Nahass; A, El-Denglawey; A, A. Abuelwafa; T, Soga

2016-06-01

Alternating current (AC) conductivity and dielectric properties of thermally evaporated Au/PtOEP/Au thin films are investigated each as a function of temperature (303 K-473 K) and frequency (50 Hz-5 MHz). The frequency dependence of AC conductivity follows the Jonscher universal dynamic law. The AC-activation energies are determined at different frequencies. It is found that the correlated barrier hopping (CBH) model is the dominant conduction mechanism. The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model. Coulombic barrier height W m , hopping distance R ω , and the density of localized states N(E F) are valued at different frequencies. Dielectric constant ɛ 1(ω,T) and dielectric loss ɛ 2(ω,T) are discussed in terms of the dielectric polarization process. The dielectric modulus shows the non-Debye relaxation in the material. The extracted relaxation time by using the imaginary part of modulus (M″) is found to follow the Arrhenius law.
The effect of micro alloying on the microstructure evolution of Sn-Ag-Cu lead-free solder

NASA Astrophysics Data System (ADS)

Werden, Jesse

The microelectronics industry is required to obtain alternative Pb-free soldering materials due to legal, environmental, and technological factors. As a joining material, solder provides an electrical and mechanical support in electronic assemblies and therefore, the properties of the solder are crucial to the durability and reliability of the solder joint and the function of the electronic device. One major concern with new Pb-free alternatives is that the microstructure is prone to microstructural coarsening over time which leads to inconsistent properties over the device's lifetime. Power aging the solder is a common method of stabilizing the microstructure for Pb-based alloys, however, it is unclear if this will be an appropriate solution to the microstructural coarsening of Pb-free solders. The goal of this work is to develop a better understanding of the coarsening process in new solder alloys and to suggest methods of stabilizing the solder microstructure. Microalloying is one potential solution to the microstructural coarsening problem. This experiment consists of a microstructural coarsening study of SAC305 in which each sample has been alloyed with one of three different solutes, directionally solidified at 100microm/s, and then aged at three different temperatures over a total period of 20 days. There are several important conclusions from this experiment. First, the coarsening kinetics of the intermetallics in the ternary eutectic follow the Ostwald ripening model where r3 in proprotional to t for each alloying constituent. Second, the activation energy for coarsening was found to be 68.1+/-10.3 kJ/mol for the SAC305 samples, Zn had the most significant increase in the activation energy increasing it to 88.8+/-34.9 kJ/mol for the SAC+Zn samples, Mn also increased the activation energy to 83.2+/-20.8 kJ/mol for the SAC+Mn samples, and Sb decreased the activation energy to 48.0+/-3.59 kJ/mol for the SAC+Sb samples. Finally, it was found that the coarsening kinetics of SAC305, SAC+Zn, SAC+Mn, and SAC+Sb are all much slower than Pb-Sn alloys, therefore, power aging the solder will not be a viable method of stabilizing the microstructure. However, adding small amounts of Zn or Mn may be useful to maintain the original microstructure so that power aging is not required.
The effect of concentration- and temperature-dependent dielectric constant on the activity coefficient of NaCl electrolyte solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valiskó, Mónika; Boda, Dezső, E-mail: boda@almos.vein.hu

2014-06-21

Our implicit-solvent model for the estimation of the excess chemical potential (or, equivalently, the activity coefficient) of electrolytes is based on using a dielectric constant that depends on the thermodynamic state, namely, the temperature and concentration of the electrolyte, ε(c, T). As a consequence, the excess chemical potential is split into two terms corresponding to ion-ion (II) and ion-water (IW) interactions. The II term is obtained from computer simulation using the Primitive Model of electrolytes, while the IW term is estimated from the Born treatment. In our previous work [J. Vincze, M. Valiskó, and D. Boda, “The nonmonotonic concentration dependencemore » of the mean activity coefficient of electrolytes is a result of a balance between solvation and ion-ion correlations,” J. Chem. Phys. 133, 154507 (2010)], we showed that the nonmonotonic concentration dependence of the activity coefficient can be reproduced qualitatively with this II+IW model without using any adjustable parameter. The Pauling radii were used in the calculation of the II term, while experimental solvation free energies were used in the calculation of the IW term. In this work, we analyze the effect of the parameters (dielectric constant, ionic radii, solvation free energy) on the concentration and temperature dependence of the mean activity coefficient of NaCl. We conclude that the II+IW model can explain the experimental behavior using a concentration-dependent dielectric constant and that we do not need the artificial concept of “solvated ionic radius” assumed by earlier studies.« less
Anomaly diffuse and dielectric relaxation in strontium doped lanthanum molybdate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiao; Fan, Huiqing, E-mail: hqfan3@163.com; Shi, Jing

2011-12-15

Highlights: Black-Right-Pointing-Pointer The anomaly diffuse and dielectric relaxation behaviors are fitted by the Cole-Cole approach. Black-Right-Pointing-Pointer The peak in the LSMO is corresponding to different oxygen ion diffusion process. Black-Right-Pointing-Pointer We first give better explanation about the strange conductivity change caused by doping. Black-Right-Pointing-Pointer The oxygen ion diffusion is due to a combination of the dipolar relaxation and the motion of ions. -- Abstract: The dielectric properties of the La{sub 2-x}Sr{sub x}Mo{sub 2}O{sub 9-{delta}} (x = 0-0.2) ceramics were investigated in the temperature range of 300-800 K. Dielectric measurement reveals that two dielectric anomalies, associated with the oxygen ion diffusion,more » exist in frequency spectrum with x = 0.5. The broad dielectric peaks in tan {delta}({omega}) can be well fitted by a modified Cole-Cole approach. When x = 0.1, only one dielectric relaxation peak is observed, corresponding to different oxygen ion diffusion processes, as distinct from the only relaxation peak in the pure La{sub 2}Mo{sub 2}O{sub 9}. The relaxation parameters {tau}{sub 0}, the dielectric relaxation strength {Delta}, and the activation energy E{sub a} were obtained. The result of this work shows that, the conductivity change caused by doping between the two phases is due to the combination of the dipolar effects and motion of ions.« less

Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

NASA Astrophysics Data System (ADS)

Guha, Suchismita; Laudari, Amrit

2017-08-01

The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.
Effect of sintering temperature on the microstructure, electrical and magnetic properties of Zn0.98 Mn0.02O material

NASA Astrophysics Data System (ADS)

Sebayang, K.; Aryanto, D.; Simbolon, S.; Kurniawan, C.; Hulu, S. F.; Sudiro, T.; Ginting, M.; Sebayang, P.

2018-02-01

Zn0.98Mn0.02O material was synthesized from ZnO and MnO2 powders using solid state reaction method. The microstructure, electrical and magnetic properties of Zn0.98Mn0.02O were studied as a function of sintering temperature. The X-ray diffraction analysis indicates that the main phase of synthesized sample is composed of hexagonal wurtzite ZnO phase. While the secondary phase of ZnMnO3 were found at the sintering temperature of 700°C and 900°C. The electrical properties measurement of Zn0.98Mn0.02O sample revealed that the resistivity and the dielectric constant of samples increase with the increase of sintering temperature. The ferromagnetic properties at room temperature were observed in the Zn0.98Mn0.02O samples sintered at 500°C and 700°C. It also found that the increase in sintering temperature leads to a tendency toward the changes in the magnetic properties into paramagnetic. The presence of ZnMnO3 secondary phases in Zn0.98Mn0.02O system is believed to be a factor that affects the decrease of the electrical and magnetic properties of the sample.
Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

NASA Astrophysics Data System (ADS)

Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

2018-02-01

ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.
Nuclear and Physical Properties of Dielectrics under Neutron Irradiation in Fast (BN-600) and Fusion (DEMO-S) Reactors

NASA Astrophysics Data System (ADS)

Blokhin, D. A.; Chernov, V. M.; Blokhin, A. I.

2017-12-01

Nuclear and physical properties (activation and transmutation of elements) of BN and Al2O3 dielectric materials subjected to neutron irradiation for up to 5 years in Russian fast (BN-600) and fusion (DEMO-S) reactors were calculated using the ACDAM-2.0 software complex for different post-irradiation cooling times (up to 10 years). Analytical relations were derived for the calculated quantities. The results may be used in the analysis of properties of irradiated dielectric materials and may help establish the rules for safe handling of these materials.
Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits.

PubMed

Obeng, Yaw; Okoro, C A; Ahn, Jung-Joon; You, Lin; Kopanski, Joseph J

The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based metrology, based on dielectric spectroscopy, for detecting and characterizing electrically active defects in fully integrated 3D devices. These defects are traceable to the chemistry of the insolation dielectrics used in the through silicon via (TSV) construction. We show that these defects may be responsible for some of the unexplained early reliability failures observed in TSV enabled 3D devices.
Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.
Dielectric properties of calicum and barium-doped strontium titanate

NASA Astrophysics Data System (ADS)

Tung, Li-Chun

Dielectric properties of high quality polycrystalline Ca- and Ba-doped SrTiO3 perovskites are studied by means of dielectric constant, dielectric loss and ferroelectric hysteresis measurements. Low frequency dispersion of the dielectric constant is found to be very small and a simple relaxor model may not be able to explain its dielectric behavior. Relaxation modes are found in these samples, and they are all interpreted as thermally activated Bipolar re-orientation across energy barriers. In Sr1- xCaxTiO3 (x = 0--0.3), two modes are found associated with different relaxation processes, and the concentration dependence implies a competition between these processes. In Sr1-xBa xTiO3 (x = 0--0.25), relaxation modes are found to be related to the structural transitions, and the relaxation modes persist at low doping levels (x < 0.1), where structural ordering is not observed by previous neutron scattering studies. The validity of well-accepted Barret formula is discussed and two of the well-accepted models, anharmonic oscillator model and transverse Ising model, are found to be equivalent. Both of the Ca and Ba systems can be understood qualitatively within the concept of transverse Ising model.
Effect of UV/ozone treatment on polystyrene dielectric and its application on organic field-effect transistors

PubMed Central

2014-01-01

The influence of UV/ozone treatment on the property of polystyrene (PS) dielectric surface was investigated, and pentacene organic field-effect transistors (OFETs) based on the treated dielectric was fabricated. The dielectric and pentacene active layers were characterized by atomic force microscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. The results showed that, at short UVO exposure time (<10 s), the chemical composition of PS dielectric surface remained the same. While at long UVO exposure time (>60 s), new chemical groups, including alcohol/ether, carbonyl, and carboxyl/ester groups, were formed. By adjusting the UVO exposure time to 5 s, the hole mobility of the OFETs increased to 0.52 cm2/Vs, and the threshold voltage was positively shifted to -12 V. While the time of UVO treatment exceeded 30 s, the mobility started to shrink, and the off-current was enlarged. These results indicate that, as a simple surface treatment method, UVO treatment could quantitatively modulate the property of PS dielectric surface by controlling the exposure time, and thus, pioneered a new way to modulate the characteristics of organic electronic devices. PMID:25258603
Development of an active isolation mat based on dielectric elastomer stack actuators for mechanical vibration cancellation

NASA Astrophysics Data System (ADS)

Karsten, Roman; Flittner, Klaus; Haus, Henry; Schlaak, Helmut F.

2013-04-01

This paper describes the development of an active isolation mat for cancelation of vibrations on sensitive devices with a mass of up to 500 gram. Vertical disturbing vibrations are attenuated actively while horizontal vibrations are damped passively. The dimensions of the investigated mat are 140 × 140 × 20 mm. The mat contains 5 dielectric elastomer stack actuators (DESA). The design and the optimization of active isolation mat are realized by ANSYS FEM software. The best performance shows a DESA with air cushion mounted on its circumference. Within the mounting encased air increases static and reduces dynamic stiffness. Experimental results show that vibrations with amplitudes up to 200 μm can be actively eliminated.
Dielectric spectroscopy platform to measure MCF10A epithelial cell aggregation as a model for spheroidal cell cluster analysis.

PubMed

Heileman, K L; Tabrizian, M

2017-05-02

3-Dimensional cell cultures are more representative of the native environment than traditional cell cultures on flat substrates. As a result, 3-dimensional cell cultures have emerged as a very valuable model environment to study tumorigenesis, organogenesis and tissue regeneration. Many of these models encompass the formation of cell aggregates, which mimic the architecture of tumor and organ tissue. Dielectric impedance spectroscopy is a non-invasive, label free and real time technique, overcoming the drawbacks of established techniques to monitor cell aggregates. Here we introduce a platform to monitor cell aggregation in a 3-dimensional extracellular matrix using dielectric spectroscopy. The MCF10A breast epithelial cell line serves as a model for cell aggregation. The platform maintains sterile conditions during the multi-day assay while allowing continuous dielectric spectroscopy measurements. The platform geometry optimizes dielectric measurements by concentrating cells within the electrode sensing region. The cells show a characteristic dielectric response to aggregation which corroborates with finite element analysis computer simulations. By fitting the experimental dielectric spectra to the Cole-Cole equation, we demonstrated that the dispersion intensity Δε and the characteristic frequency f c are related to cell aggregate growth. In addition, microscopy can be performed directly on the platform providing information about cell position, density and morphology. This platform could yield many applications for studying the electrophysiological activity of cell aggregates.
Acoustic activation of water-in-oil microemulsions for controlled salt dissolution.

PubMed

Baxamusa, Salmaan; Ehrmann, Paul; Ong, Jemi

2018-06-18

The dynamic nature of the oil-water interface allows for sequestration of material within the dispersed domains of a microemulsion. Microstructural changes should therefore change the dissolution rate of a solid surface in a microemulsion. We hypothesize that microstructural changes due to formulation and cavitation in an acoustic field will enable control over solid dissolution rates. Water-in-oil microemulsions were formulated using cyclohexane, water, Triton X-100, and hexanol. The microstructure and solvation properties of Winsor Type IV formulations were characterized. Dissolution rates of KH 2 PO 4 (KDP), were measured. A kinetic analysis isolated the effect of the microstructure, and rate enhancements due to cavitation effects on the microstructure were characterized by measuring dissolution rates in an ultrasonic field. Dispersed aqueous domains of 2-6 nm radius dissolve a solid block of KDP at 0-10 nm/min. Dissolution rate is governed not by the domain-surface collision frequency but rather by a dissolution probability per domain-surface encounter. Higher probabilities are correlated with larger domains. Rapid and reversible dissolution rate increases of up to 270× were observed under ultrasonic conditions, with <20% of the increase due to bulk heating effects. The rest is attributed to cavitation-induced changes to the domain microstructure, providing a simple method for remotely activating and de-activating dissolution. Copyright © 2018 Elsevier Inc. All rights reserved.
Dielectric relaxation of NdMnO{sub 3} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sujoy, E-mail: sahasujoy3@gmail.com; Chanda, Sadhan; Dutta, Alo

2013-11-15

Graphical abstract: (a) TEM image of particle distribution of NMO. (b) HRTEM image of a single NMO particle under 4,000,000× magnification. (c) SAED pattern of a single NMO nanoparticle. - Highlights: • NdMnO{sub 3} nanoparticles are synthesized by sol–gel process. • TEM micrograph shows a granular characteristic with an average particle size of ∼50 nm. • HRTEM is consistent with the spacing between the (2 0 0) planes of the orthorhombic NdMnO{sub 3}. • Band gap is found to be 4.4 eV. • Cole–Cole model has been used to explain the dielectric relaxation in the material. • The activation energymore » of the material is found to be ∼0.43 eV. - Abstract: The neodymium manganate (NdMnO{sub 3}) nanoparticles are synthesized by the sol–gel process. The phase formation and particle size of the sample are determined by X-ray diffraction analysis and transmission electron microscopy. The band gap of the material is obtained by UV–visible absorption spectroscopy using Tauc relation. Dielectric properties of the sample have been investigated in the frequency range from 42 Hz to 1 MHz and in the temperature range from 303 K to 573 K. The dielectric relaxation peaks are observed in the frequency dependent dielectric loss spectra. The Cole–Cole model is used to explain the dielectric relaxation mechanism of the material. The complex impedance plane plot confirms the existence of both the grain and grain-boundary contribution to the relaxation. The temperature dependence of both grain and grain-boundary resistances follow the Arrhenius law with the activation energy of 0.427 and 0.431 eV respectively. The frequency-dependent conductivity spectra follow the power law.« less
Dielectric loss of strontium titanate thin films

NASA Astrophysics Data System (ADS)

Dalberth, Mark Joseph

1999-12-01

Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.
Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films

NASA Astrophysics Data System (ADS)

Zednik, Ricardo J.; McIntyre, Paul C.; Baniecki, John D.; Ishii, Masatoshi; Shioga, Takeshi; Kurihara, Kazuaki

2007-03-01

We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20-575K for frequencies between 1kHz and 1MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie-von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.
AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

NASA Astrophysics Data System (ADS)

Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

2017-11-01

Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.
The effect of SiO2, Pt, and Pt /Au templates on the microstructure and permittivity of BaxSr1-xTiO3 films

NASA Astrophysics Data System (ADS)

Rundqvist, Pär; Liljenfors, Tomas; Vorobiev, Andrei; Olsson, Eva; Gevorgian, Spartak

2006-12-01

Ba0.25Sr0.75TiO3 (BSTO) and SrTiO3 (STO) ferroelectric thin films were grown on templates of SiO2/Si, Pt /TiO2/SiO2/Si, and Pt /Au/Pt/TiO2/SiO2/Si using pulsed laser deposition. The microstructure and surface morphology of the multilayer stacks were studied using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The microstructural analysis shows that the ferroelectric films are polycrystalline textured with a columnar structure where the grain size is 50-100nm. The BSTO films deposited at 800°C on an amorphous SiO2/Si template reveal a textured structure with a dominant (110) orientation, which is explained by a dominant growth of BSTO (110) grains due to the lower surface energy of the (110) phase. The STO and BSTO films deposited at 650°C on the Pt /TiO2/SiO2/Si and Pt /Au/Pt/TiO2/SiO2/Si templates, respectively, reveal a structure with a dominant (111) orientation, which is explained by the dominant growth of BSTO (STO) (111) grains imposed by the underlying Pt (111) texture. In all cases the ferroelectric films are subject to compressive in-plane strain which is different for different grain orientations. Strain modified permittivities of ferroelectric films grown on different templates are calculated from first principles for different orientations and compared with measured results. The correlations between grain orientations, grain sizes, grain boundaries, strain, and dielectric permittivity of ferroelectric films on different templates are discussed.
Cluster kinetics model for mixtures of glassformers

NASA Astrophysics Data System (ADS)

Brenskelle, Lisa A.; McCoy, Benjamin J.

2007-10-01

For glassformers we propose a binary mixture relation for parameters in a cluster kinetics model previously shown to represent pure compound data for viscosity and dielectric relaxation as functions of either temperature or pressure. The model parameters are based on activation energies and activation volumes for cluster association-dissociation processes. With the mixture parameters, we calculated dielectric relaxation times and compared the results to experimental values for binary mixtures. Mixtures of sorbitol and glycerol (seven compositions), sorbitol and xylitol (three compositions), and polychloroepihydrin and polyvinylmethylether (three compositions) were studied.
Janus droplets: liquid marbles coated with dielectric/semiconductor particles.

PubMed

Bormashenko, Edward; Bormashenko, Yelena; Pogreb, Roman; Gendelman, Oleg

2011-01-04

The manufacturing of water droplets wrapped with two different powders, carbon black (semiconductor) and polytetrafluoroethylene (dielectric), is presented. Droplets composed of two hemispheres (Janus droplets) characterized by various physical and chemical properties are reported first. Watermelon-like striped liquid marbles are reported. Janus droplets remained stable on solid and liquid supports and could be activated with an electric field.
A process to fabricate fused silica nanofluidic devices with embedded electrodes using an optimized room temperature bonding technique

NASA Astrophysics Data System (ADS)

Boden, Seth; Karam, P.; Schmidt, A.; Pennathur, S.

2017-05-01

Fused silica is an ideal material for nanofluidic systems due to its extreme purity, chemical inertness, optical transparency, and native hydrophilicity. However, devices requiring embedded electrodes (e.g., for bioanalytical applications) are difficult to realize given the typical high temperature fusion bonding requirements (˜1000 °C). In this work, we optimize a two-step plasma activation process which involves an oxygen plasma treatment followed by a nitrogen plasma treatment to increase the fusion bonding strength of fused silica at room temperature. We conduct a parametric study of this treatment to investigate its effect on bonding strength, surface roughness, and microstructure morphology. We find that by including a nitrogen plasma treatment to the standard oxygen plasma activation process, the room temperature bonding strength increases by 70% (0.342 J/m2 to 0.578 J/m2). Employing this optimized process, we fabricate and characterize a nanofluidic device with an integrated and dielectrically separated electrode. Our results prove that the channels do not leak with over 1 MPa of applied pressure after a 24 h storage time, and the electrode exhibits capacitive behavior with a finite parallel resistance in the upper MΩ range for up to a 6.3Vdc bias. These data thus allow us to overcome the barrier that has barred nanofluidic progress for the last decade, namely, the development of nanometer scale well-defined channels with embedded metallic materials for far-reaching applications such as the exquisite manipulation of biomolecules.
Concentration dependence of molal conductivity and dielectric constant of 1-alcohol electrolytes using the compensated arrhenius formalism.

PubMed

Fleshman, Allison M; Petrowsky, Matt; Frech, Roger

2013-05-02

The molal conductivity of liquid electrolytes with low static dielectric constants (ε(s) < 10) decreases to a minimum at low concentrations (region I) and increases to a maximum at higher concentrations (region II) when plotted against the square root of the concentration. This behavior is investigated by applying the compensated Arrhenius formalism (CAF) to the molal conductivity, Λ, of a family of 1-alcohol electrolytes over a broad concentration range. A scaling procedure is applied that results in an energy of activation (E(a)) and an exponential prefactor (Λ0) that are both concentration dependent. It is shown that the increasing molal conductivity in region II results from the combined effect of (1) a decrease in the energy of activation calculated from the CAF, and (2) an inherent concentration dependence in the exponential prefactor that is partly due to the dielectric constant.

On the mechanism of pattern formation in glow dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, Yajun; Li, Ben; Ouyang, Jiting, E-mail: jtouyang@bit.edu.cn

2016-01-15

The formation mechanism of pattern in glow dielectric barrier discharge is investigated by two-dimensional fluid modeling. Experimental results are shown for comparison. The simulation results show that the non-uniform distribution of space charges makes the discharge be enhanced in the high-density region but weakened in its neighborhood, which is considered as an activation-inhibition effect. This effect shows through during a current pulse (one discharge event) but also in a certain period of time after discharge that determines a driving frequency range for the non-uniformity of space charges to be enhanced. The effects of applied voltage, surface charge, electrode boundary, andmore » external field are also discussed. All these factors affect the formation of dielectric-barrier-discharge pattern by changing the distribution or the dynamics of space charges and hence the activation-inhibition effect of non-uniform space charges.« less
Flexible Microsphere-Embedded Film for Microsphere-Enhanced Raman Spectroscopy.

PubMed

Xing, Cheng; Yan, Yinzhou; Feng, Chao; Xu, Jiayu; Dong, Peng; Guan, Wei; Zeng, Yong; Zhao, Yan; Jiang, Yijian

2017-09-27

Dielectric microspheres with extraordinary microscale optical properties, such as photonic nanojets, optical whispering-gallery modes (WGMs), and directional antennas, have drawn interest in many research fields. Microsphere-enhanced Raman spectroscopy (MERS) is an alternative approach for enhanced Raman detection by dielectric microstructures. Unfortunately, fabrication of microsphere monolayer arrays is the major challenge of MERS for practical applications on various specimen surfaces. Here we report a microsphere-embedded film (MF) by immersing a highly refractive microsphere monolayer array in the poly(dimethylsiloxane) (PDMS) film as a flexible MERS sensing platform for one- to three-dimensional (1D to 3D) specimen surfaces. The directional antennas and wave-guided whispering-gallery modes (WG-WGMs) contribute to the majority of Raman enhancement by the MFs. Moreover, the MF can be coupled with surface-enhanced Raman spectroscopy (SERS) to provide an extra >10-fold enhancement. The limit of detection is therefore improved for sensing of crystal violet (CV) and Sudan I molecules in aqueous solutions at concentrations down to 10 -7 M. A hybrid dual-layer microsphere enhancer, constructed by depositing a MF onto a microsphere monolayer array, is also demonstrated, wherein the WG-WGMs become dominant and boost the enhancement ratio >50-fold. The present work opens up new opportunities for design of cost-effective and flexible MERS sensing platforms as individual or associated techniques toward practical applications in ultrasensitive Raman detection.
Synthesis of bismuth titanate (BTO) nanopowder and fabrication of microstrip rectangular patch antenna

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sharma, Sanjeev K.; Sankar, S.; Sankar Ganesh, R.; Marikani, A.; Kim, Deuk Young

2016-12-01

The bismuth titanate (Bi4Ti3O12) or BTO nanopowder was synthesized from the combustion method and fabricated a microstrip rectangular patch antenna (MPA). The crystal structure and lattice spacing of BTO were evaluated from XRD, TEM, and SAED analysis. The crystal structure of BTO (annealed at 900 °C) was observed to be the orthorhombic phase with fcc lattice. The microstructure of BTO nanoparticles was confirmed the spherical and hexagonal shapes, which were slightly agglomerated due to the lack of stabilizing surfactants. The presence of weak and wide bands in Raman spectrum quantified the mechanical compressions to the uniform directions of elongated lattice constants and tensions to the lattice constriction of crystalline bismuth titanate. To fabricate the MPA, pellets of BTO nanopowder were prepared by applying the uniaxial pressure in the dimension of 1.5 mm thickness and 8 mm diameter. These pellets were formed a densely packed structure close to the theoretical density. The coercivity and remanence polarization of BTO ceramics increased as the applied field increased. The inexpensive combustion synthesis method of BTO nanopowder showed the high dielectric constant (ɛ' = 450) and low dielectric loss (tan δ = 0.98), which has a potential implication of the cost-effectiveness in the field of miniaturized microelectronics. The synthesis and measurements of BTO ceramics are found to be suitable for wireless communication systems.
Substrate-induced dielectric polarization in thin films of lead-free (Sr0.5Bi0.5)2Mn2-xTixO6-δ perovskites grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Álvarez-Serrano, I.; Ruiz de Larramendi, I.; López, M. L.; Veiga, M. L.

2017-03-01

Thin films of SrBiMn2-xTixO6-δ have been fabricated by Pulsed Laser Deposition on SrTiO3 [100] and [111] substrates. Their texture, width, homogeneity and morphology are evaluated by means of XRD, SEM, XPS, whereas complex impedance spectroscopy is employed to analyze their electrical response. The thickness values range between 80 and 900 nm depending on the experimental conditions. The epitaxial growing could be interpreted in terms of two contributions of microstructural origin: a matrix part and some polycrystalline surface formations (hemi-spheres). Texture studies suggest a fiber-type orientated morphology coherently with the Scanning Electron Microscopy images. XPS analyses indicate a segregation regarding A-sublattice cations, which features depend on the substrate orientation. This segregation could be connected to the development of nanopolar regions. Impedance data show the electrical polarization in the samples to be enhanced compared to bulk response of corresponding powdered samples. A relaxor behavior which fits a Vogel-Fulcher law is obtained for x = 0.50 whereas an almost frequency-independent relaxor ferroelectric behavior is registered for the thinnest film of x = 0.25 composition grown on SrTiO3 [111] substrate. The influence of compositional and structural aspects in the obtained dielectric response is analyzed.
Hydrothermal growth of highly textured BaTiO₃ films composed of nanowires.

PubMed

Zhou, Zhi; Lin, Yirong; Tang, Haixiong; Sodano, Henry A

2013-03-08

Textured barium titanate (BaTiO(3)) films are attracting immense research interest due to their lead-free composition and excellent piezoelectric and dielectric properties. Most synthesis methods for these films require a high temperature, leading to the formation of a secondary phase and an overall decrease in the electrical properties of the ceramic. In order to alleviate these issues, a novel fabrication method is introduced by transferring oriented rutile TiO(2) nanowires to a textured BaTiO(3) film at temperatures below 160 °C. The microstructure and thickness of the fabricated BaTiO(3) films were characterized by scanning electron microscopy, and the crystal structure and degree of orientation were evaluated by x-ray diffraction patterns using the Lotgering method. It is shown that the thickness of the BaTiO(3) film can be controlled by the length of TiO(2) nanowire array template, and the degree of orientation of the textured BaTiO(3) films is highly dependent on the film thickness; the crystallographic orientation has been measured to reach up to 87%. The relative dielectric constant (ε(r) = 1300) and ferroelectric properties (P(r) = 2.7 μC cm(-2), E(c) = 4.0 kV mm(-1)) of the textured BaTiO(3) films were also characterized to demonstrate their potential application in sensors, random access memory, and micro-electromechanical systems.
Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, S.; Ma, B.; Narayanan, M.

2012-01-01

Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 xmore » 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.« less
Crystal Structure, Piezoelectric and Dielectric Properties of (Li, Ce)4+, Nb5+ and Mn2+ Co-doped CaBi4Ti4O15 High-Temperature Ceramics

NASA Astrophysics Data System (ADS)

Xin, Deqiong; Chen, Qiang; Wu, Jiagang; Bao, Shaoming; Zhang, Wen; Xiao, Dingquan; Zhu, Jianguo

2016-07-01

Bismuth-layered structured ceramics Ca0.85(Li,Ce)0.075Bi4Ti4- x Nb x O15-0.01MnCO3 were prepared by the conventional solid-state reaction method. The evolution of microstructure and corresponding electrical properties were studied. All the samples presented a single bismuth layered-structural phase with m = 4, indicating that (Li, Ce)4+, Nb5+ and Mn2+ adequately enter into the pseudo-perovskite structure and form solid solutions. It was found that Ca0.85(Li,Ce)0.075Bi4Ti3.98Nb0.02O15-0.01MnCO3 (CBTLCM-0.02Nb) ceramics possess the optimum electrical properties. The piezoelectric coefficient d 33, dielectric constant ɛ r, loss tan δ, planar electromechanical coupling factor k p and Curie-temperature T C of CBTLCM-0.02Nb ceramics were found to be ˜19.6 pC/N, 160, 0.16%, 8.1% and 767°C, respectively. Furthermore, the thermal depoling behavior demonstrates that the d 33 value of x = 0.02 content remains at 16.8 pC/N after annealing at 500°C. These results suggest that the (Li, Ce)4+-, Nb5+- and Mn2+-doped CBT-based ceramics are promising candidates for high-temperature piezoelectric applications.
Solid-state synthesis of YAG powders through microwave coupling of oxide/carbon particulate mixtures

DOE PAGES

Wildfire, Christina; Sabolsky, Edward M.; Spencer, Michael J.; ...

2017-06-14

The rapid synthesis of yttrium aluminum garnet (Y 3Al 15O 12, YAG) powder was investigated through the use of microwave irradiation of the oxide precursor system. For this investigation, an external hybrid heating source was not used. Instead, the rapid heating of the precursor materials (yttria and alumina powders, which are typically transparent to 2.45 GHz microwaves) was initiated by mixing an intrinsic absorbing material (carbon) into the original oxide precursors. The effect of the carbon characteristics, such as carbon source, concentration, particle size, and agglomerate microstructure were evaluated on the efficiency of coupling and resultant oxide reaction. The microwavemore » power was varied to optimize the YAG conversion and eliminate intermediate phase formation. Interactions between the conductive carbon particles and the dielectric oxides within the microwave exposure produced local arching and micro-plasma formation within the powder bed, resulting in the rapid formation of the refractory YAG composition. This optimal conduction led to temperatures of 1000°C that could be achieved in less than 5 min resulting in the formation of > 90 vol% YAG. The understanding of a conductor/dielectric particulate system here, provided insight into possible application of similar systems where microwave irradiation could be used for enhanced solid-state formation, local melting events, and gas phase reactions with a composite powder media.« less
Dielectric and transport properties of CaTiO3

NASA Astrophysics Data System (ADS)

Bhadala, Falguni; Suthar, Lokesh; Roy, M.; Jha, Vikash Kumar

2018-05-01

The ceramic sample of CaTiO3 (CTO) has been prepared by standard high temperature solid state reaction method using high purity oxides. The formation of the compound as well as structural analysis has been carried out by X-ray diffraction method. The dielectric constant and dielectric loss as a function of frequency (20kHz-10MHz) and temperature (RT-490K) have been measured. The dc conductivity has been measured and activation energy was calculated using the Arrhenius relation. The Enthalpy change (ΔH), Specific heat and Weight-loss of the compound have been measured using DTA/TGA techniques. The results are discussed in detail.
Effect of aluminium substitution on the electrical properties of Ni-Zn nanoferrites

NASA Astrophysics Data System (ADS)

Paramesh, D.; Vijaya Kumar, K.; Venkat Reddy, P.

2017-12-01

Nanoferrites of general formula Ni0.5 Zn0.5 Alx Fe2-x O4 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6, 1.8 and 2.0) synthesized by sol-gel auto combustion technique can be characterized by dielectric behaviour and AC conductivity studies with the help of LCR impedance meter. This paper gives an insight on variations in dielectric constant, dielectric loss with reference to frequency, temperature and Al3+ ion substitution and also the determination of DC resistivity, activation energy and Curie temperature by two probe experimental set-up.
Structural and optical properties of rare earth-doped (Ba{sub 0.77}Ca{sub 0.23}){sub 1-x}(Sm, Nd, Pr, Yb){sub x}TiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moraes, A. P. A.; Universidade Federal do Mato Grosso, 78060-900, Araguaia-MT; Filho, A. G. Souza

2011-06-15

The structural, dielectric, and vibrational properties of pure and rare earth (RE)-doped Ba{sub 0.77}Ca{sub 0.23}TiO{sub 3} (BCT23; RE = Nd, Sm, Pr, Yb) ceramics obtained via solid-state reaction were investigated. The pure and RE-doped BCT23 ceramics sintered at 1450 deg. C in air for 4 h showed a dense microstructure in all ceramics. The use of RE ions as dopants introduced lattice-parameter changes that manifested in the reduction of the volume of the unit cell. RE-doped BCT23 samples exhibit a more homogenous microstructure due to the absence of a Ti-rich phase in the grain boundaries as demonstrated by scanning electronmore » microscopy imaging. The incorporation of REs led to perturbations of the local symmetry of TiO{sub 6} octahedra and the creation of a new Raman mode. The results of Raman scattering measurements indicated that the Curie temperature of the ferroelectric phase transition depends on the RE ion and ion content, with the Curie temperature shifting toward lower values as the RE content increases, with the exception of Yb{sup 3+} doping, which did not affect the ferroelectric phase transition temperature. The phase transition behavior is explained using the standard soft mode model. Electronic paramagnetic resonance measurements showed the existence of Ti vacancies in the structure of RE-doped BCT23. Defects are created via charge compensation mechanisms due to the incorporation of elements with a different valence state relative to the ions of the pure BCT23 host. It is concluded that the Ti vacancies are responsible for the activation of the Raman mode at 840 cm{sup -1}, which is in agreement with lattice dynamics calculations.« less
Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior

NASA Astrophysics Data System (ADS)

Anton, Eva-Maria; García, R. Edwin; Key, Thomas S.; Blendell, John E.; Bowman, Keith J.

2009-01-01

A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain's switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) negative poling, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) domain reswitching mechanism is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a material-dependent operating temperature, the predicted built-in electric fields can potentially drive the aging and electrical fatigue of the system to further skew the shape of the hysteresis loops.
BiVO4 microstructures with various morphologies: Synthesis and characterization

NASA Astrophysics Data System (ADS)

Wu, Min; Jing, Qifeng; Feng, Xinyan; Chen, Limiao

2018-01-01

Bismuth vanadate (BiVO4) microstructures with dumbbell, rod, ellipsoid, sphere, and cake-like morphologies have been successfully fabricated by using a surfactant-free hydrothermal method, in which the morphology of the BiVO4 microstructures can be tuned by simply varying the molar ratio of Bi(NO)3·5H2O to NaVO3 in the starting materials. Based on a series of contrast experiments, the probable formation mechanism of the BiVO4 microstructures with multiple shapes have been proposed. The photocatalytic performances of the as-prepared BiVO4 microstructures have been evaluated by studying the degradation of Rhodamine B solutions under visible light irradiation. The results reveal that the cake-like BiVO4 microstructures exhibit the higher photocatalytic activity than other BiVO4 microstructures due to its high surface area and unique morphology.
Decay Rate of the Nuclear Isomer Th 229 (3 /2+,7.8 eV ) in a Dielectric Sphere, Thin Film, and Metal Cavity

NASA Astrophysics Data System (ADS)

Tkalya, E. V.

2018-03-01

The main decay channels of the anomalous low-energy 3 /2+(7.8 ±0.5 eV ) isomeric level of the Th 229 nucleus, namely the γ emission and internal conversion, inside a dielectric sphere, dielectric thin film, and conducting spherical microcavity are investigated theoretically, taking into account the effect of media interfaces. It is shown that (1) the γ decay rate of the nuclear isomer inside a dielectric thin film and dielectric microsphere placed in a vacuum or in a metal cavity can decrease (increase) in dozen of times, (2) the γ activity of the distributed source as a function of time can be nonexponential, and (3) the metal cavity, whose size is of the order of the radiation wavelength, does not affect the probability of the internal conversion in Th 229 , because the virtual photon attenuates at much shorter distances and the reflected wave is very weak.
Order, viscoelastic, and dielectric properties of symmetric and asymmetric alkyl[1]benzothieno[3,2-b][1]benzothiophenes.

PubMed

Grigoriadis, Christos; Niebel, Claude; Ruzié, Christian; Geerts, Yves H; Floudas, George

2014-02-06

The morphology, the viscoelastic, the dielectric properties and the dynamics of phase transformation are studied in symmetrically and asymmetrically substituted alkyl[1]benzothieno[3,2-b][1]benzothiophenes (C8-BTBT) by X-ray scattering, rheology, and dielectric spectroscopy. The interlayer spacing reflects the molecular and supramolecular ordering, respectively, in the symmetrically and asymmetrically substituted BTBTs. In the asymmetric BTBT, the core layer is double in size with a broader network of intermolecular interactions though the increased S-S contacts that is prerequisite for the development of high performance OFET devices. Two crystal states with elastic and viscoelastic responses were identified in the symmetric compound. In contrast, the SmA phase in the asymmetric compound is a viscoelastic solid. A path-dependent dielectric environment with a switchable dielectric permittivity was found in both compounds by cooling below 0 °C with possible implications to charge transport. The kinetics of phase transformation to the crystalline and SmA phases revealed a nucleation and growth mechanism with rates dominated by the low activation barriers.
Antireflective Coatings: Conventional Stacking Layers and Ultrathin Plasmonic Metasurfaces, A Mini-Review

PubMed Central

Keshavarz Hedayati, Mehdi; Elbahri, Mady

2016-01-01

Reduction of unwanted light reflection from a surface of a substance is very essential for improvement of the performance of optical and photonic devices. Antireflective coatings (ARCs) made of single or stacking layers of dielectrics, nano/microstructures or a mixture of both are the conventional design geometry for suppression of reflection. Recent progress in theoretical nanophotonics and nanofabrication has enabled more flexibility in design and fabrication of miniaturized coatings which has in turn advanced the field of ARCs considerably. In particular, the emergence of plasmonic and metasurfaces allows for the realization of broadband and angular-insensitive ARC coatings at an order of magnitude thinner than the operational wavelengths. In this review, a short overview of the development of ARCs, with particular attention paid to the state-of-the-art plasmonic- and metasurface-based antireflective surfaces, is presented. PMID:28773620
The lanthanum gallate-based mixed conducting perovskite ceramics

NASA Astrophysics Data System (ADS)

Politova, E. D.; Stefanovich, S. Yu.; Aleksandrovskii, V. V.; Kaleva, G. M.; Mosunov, A. V.; Avetisov, A. K.; Sung, J. S.; Choo, K. Y.; Kim, T. H.

2005-01-01

The structure, microstructure, dielectric, and transport properties of the anion deficient perovskite solid solutions (La,Sr)(Ga,Mg,M)O3- with M=Fe, Ni have been studied. Substitution of iron and nickel for gallium up to about 20 and 40 at.% respectively, leads to the perovskite lattice contraction due to the cation substitutions by the transition elements. The transition from pure ionic to mixed ionic-electronic conductivity was observed for both the systems studied. Both the enhancement of total conductivity and increasing in the thermal expansion coefficient values has been proved to correlate with the increasing amount of weakly bounded oxygen species in the Fe or Ni-doped ceramics. The oxygen ionic conductivity has been estimated from the kinetic experiments using the dc-conductivity and dilatometry methods under the condition of the stepwise change of the atmosphere from nitrogen to oxygen.
Quantitative assessment of submicron scale anisotropy in tissue multifractality by scattering Mueller matrix in the framework of Born approximation

NASA Astrophysics Data System (ADS)

Das, Nandan Kumar; Dey, Rajib; Chakraborty, Semanti; Panigrahi, Prasanta K.; Meglinski, Igor; Ghosh, Nirmalya

2018-04-01

A number of tissue-like disordered media exhibit local anisotropy of scattering in the scaling behavior. Scaling behavior contains wealth of fractal or multifractal properties. We demonstrate that the spatial dielectric fluctuations in a sample of biological tissue exhibit multifractal anisotropy. Multifractal anisotropy encoded in the wavelength variation of the light scattering Mueller matrix and manifesting as an intriguing spectral diattenuation effect. We developed an inverse method for the quantitative assessment of the multifractal anisotropy. The method is based on the processing of relevant Mueller matrix elements in Fourier domain by using Born approximation, followed by the multifractal analysis. The approach promises for probing subtle micro-structural changes in biological tissues associated with the cancer and precancer, as well as for non-destructive characterization of a wide range of scattering materials.
Bandlike Transport in Ferroelectric-Based Organic Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Laudari, A.; Guha, S.

2016-10-01

The dielectric constant of polymer-ferroelectric dielectrics may be tuned by changing the temperature, offering a platform for monitoring changes in interfacial transport with the polarization strength in organic field-effect transistors (FETs). Temperature-dependent transport studies of FETs are carried out from a solution-processed organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), using both ferroelectric- and nonferroelectric-gate insulators. Nonferroelectric dielectric-based TIPS-pentacene FETs show a clear activated transport, in contrast to the ferroelectric dielectric polymer, poly(vinylidene fluoride-trifluoroethylene), where a negative temperature coefficient of the mobility is observed in the ferroelectric temperature range. The current-voltage (I -V ) characteristics from TIPS-pentacene diodes signal a space-charge-limited conduction (SCLC) for a discrete set of trap levels, suggesting that charge injection and transport occurs through regions of ordering in the semiconductor. The carrier mobility extracted from temperature-dependent I -V characteristics from the trap-free SCLC region shows a negative coefficient beyond 200 K, similar to the trend observed in FETs with the ferroelectric dielectric. At moderate temperatures, the polarization-fluctuation-dominant transport inherent in a ferroelectric dielectric, in conjunction with the nature of traps, results in an effective detrapping of the shallow-trap states into more mobile states in TIPS-pentacene.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuo, X. Z.; Yang, J., E-mail: jyang@issp.ac.cn; Yuan, B.

We investigate the structural, magnetic, dielectric properties, and scaling behaviors of Aurivillius compounds Bi{sub 6−x∕3}Fe{sub 2}Ti{sub 3−2x}(WCo){sub x}O{sub 18} (0 ≤ x ≤ 0.15). The room-temperature weak ferromagnetism is observed for the W/Co co-doped samples. The results of the dielectric constant ε{sub r}, complex impedance Z″, the dc conductivity σ{sub dc}, and hopping frequency f{sub H} manifest that the dielectric relaxation of the x = 0 sample and the doped samples in the dielectric anomaly region (450–750 K) can be ascribed to the trap-controlled ac conduction around the doubly ionized oxygen vacancies and the localized hopping process of oxygen vacancies, respectively.more » The scaling behaviors reveal that the dynamic process of both electrons in the x = 0 sample and oxygen vacancies in the doped samples is temperature independent. The ferroelectric Curie-temperature T{sub c} decreases slightly from 973 K to 947 K with increasing the doping level of W/Co. In addition, the dielectric loss exhibits a dielectric relaxation above 800 K with the rather large activation energies (1.95 eV ≤ E{sub a} ≤ 2.72 eV)« less

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